WO2016124076A1 - 一种媒体接入控制mac芯片及终端设备 - Google Patents

一种媒体接入控制mac芯片及终端设备 Download PDF

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WO2016124076A1
WO2016124076A1 PCT/CN2016/071230 CN2016071230W WO2016124076A1 WO 2016124076 A1 WO2016124076 A1 WO 2016124076A1 CN 2016071230 W CN2016071230 W CN 2016071230W WO 2016124076 A1 WO2016124076 A1 WO 2016124076A1
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mac chip
silicon
laser
detector
substrate layer
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French (fr)
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王莹
付志明
李明生
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ZTE Corp
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ZTE Corp
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Priority to US15/548,417 priority patent/US10355444B2/en
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/026—Monolithically integrated components, e.g. waveguides, monitoring photo-detectors, drivers
    • H01S5/0261—Non-optical elements, e.g. laser driver components, heaters
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04B—TRANSMISSION
    • H04B10/00—Transmission systems employing electromagnetic waves other than radio-waves, e.g. infrared, visible or ultraviolet light, or employing corpuscular radiation, e.g. quantum communication
    • H04B10/40—Transceivers
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J1/00—Photometry, e.g. photographic exposure meter
    • G01J1/02—Details
    • G01J1/0204—Compact construction
    • G01J1/0209—Monolithic
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J1/00—Photometry, e.g. photographic exposure meter
    • G01J1/42—Photometry, e.g. photographic exposure meter using electric radiation detectors
    • G01J1/44—Electric circuits
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/022—Mountings; Housings
    • H01S5/023—Mount members, e.g. sub-mount members
    • H01S5/02325—Mechanically integrated components on mount members or optical micro-benches
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/022—Mountings; Housings
    • H01S5/0235—Method for mounting laser chips
    • H01S5/02355—Fixing laser chips on mounts
    • H01S5/0236—Fixing laser chips on mounts using an adhesive
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/3013—AIIIBV compounds

Definitions

  • This application relates to, but is not limited to, the field of optical communications.
  • the optical communication system terminal device of the related art is composed of an optical transceiver module, a traditional MAC (Media Access Control) chip and a peripheral circuit.
  • the terminal device has a large volume, high power consumption, and the cost is difficult to have. reduce.
  • the present invention provides a medium access control MAC chip and a terminal device, which solves the problem that the optical communication system terminal device in the related art is large in size, high in power consumption, and difficult to reduce in cost.
  • An embodiment of the present invention provides a medium access control MAC chip, where the MAC chip includes:
  • a silicon substrate layer having a silicon dioxide base layer formed on a surface of the silicon substrate layer, and a silicon base layer formed on a surface of the silicon dioxide base layer facing away from the silicon substrate layer;
  • the element layer Forming an element layer on a surface of the silicon base layer facing away from the silicon dioxide base layer, the element layer including a laser, a passive device, a detector, a driving circuit, and a MAC chip body;
  • the driving circuit is respectively connected to the laser, the detector and the MAC chip body, and the laser is connected to the detector through the passive device.
  • the laser is a III-V laser.
  • the driving circuit comprises:
  • a laser driving circuit respectively connected to the MAC chip body and the laser.
  • the driving circuit further includes:
  • An amplifying circuit connected to the detector
  • Filter circuits respectively connected to the MAC chip body and the amplifying circuit.
  • the passive device, the detector, the driving circuit and the MAC chip body are respectively formed on the silicon substrate layer by using a silicon material growth manner.
  • the laser is formed on the silicon substrate layer by bonding.
  • the silicon dioxide substrate layer is formed on the silicon substrate layer by using a silicon material growth method; and the silicon substrate layer is formed on the silicon dioxide substrate layer by using a silicon material growth mode.
  • the laser, the passive device, the detector, the driving circuit, and the MAC chip body are uniformly disposed on the silicon base layer according to a preset manner.
  • An embodiment of the present invention further provides a terminal device, including: a media access control MAC chip as described above.
  • the medium access control MAC chip of the embodiment of the invention includes a silicon substrate layer, a silicon dioxide base layer, a silicon base layer and an element layer which are sequentially formed from bottom to top.
  • the component layer comprises a laser, a passive component, a detector, a driving circuit and a MAC chip body, and the driving circuit is respectively connected with the laser, the detector and the MAC chip body, and the laser is connected to the detector through the passive device.
  • the laser, the passive device, the detector and the driving circuit together constitute the optical transceiver function of the MAC chip, forming a new MAC chip with optical transceiver function, so that the terminal device of the new MAC chip does not need to separately set the optical transceiver module, thereby The size of the terminal device of the new MAC chip is reduced, the power consumption of the device is reduced, and the production cost is reduced.
  • FIG. 1 is a schematic structural diagram of a media access control MAC chip according to an embodiment of the present invention
  • FIG. 2 is a schematic structural diagram of a component layer of a medium access control MAC chip according to an embodiment of the present invention.
  • 1-silicon substrate layer 2-silicon dioxide substrate layer, 3-silicon substrate layer, 4-element layer, 41-laser, 42-passive device, 43-detector, 44-drive circuit, 441-laser driver circuit , 442-amplifier circuit, 443-filter circuit, 45-MAC chip body, 5-external service interface module.
  • the media access control MAC chip of the embodiment of the invention integrates the optical transceiver module with the traditional MAC chip, and adopts a silicon-based hybrid integration method to form a novel MAC chip with optical transceiver function, and solves the related technology.
  • the terminal device is bulky, has high power consumption, and is difficult to reduce in cost.
  • the medium access control MAC chip of the embodiment of the present invention includes:
  • a silicon substrate layer 1 a silicon substrate layer 2 is formed on the surface of the silicon substrate layer 1, and a silicon substrate layer 3 is formed on a surface of the silicon dioxide substrate layer 2 facing away from the silicon substrate layer 1;
  • An element layer 4 is formed on a surface of the silicon substrate layer 3 facing away from the silicon dioxide substrate layer 2, and the element layer 4 includes a laser 41, a passive device 42, a detector 43, a driving circuit 44, and a MAC chip body. 45;
  • the driving circuit 44 is respectively connected to the laser 41, the detector 43, and the MAC chip body 45, and the laser 41 is connected to the detector 43 through the passive device 42.
  • the medium access control MAC chip of the embodiment of the present invention first adopts a CMOS process, firstly forming a silicon dioxide underlayer 2, a silicon underlayer 3 from the bottom to the top on the silicon substrate layer 1, and then forming a device layer on the silicon underlayer 3. 4.
  • the laser 41 of the element layer 4, the passive device 42, the detector 43, and the drive circuit 44 together constitute an optical transceiver function of the MAC chip.
  • a new MAC chip with optical transceiver function is formed, so that the terminal device of the new MAC chip does not need to separately set the optical transceiver module, thereby reducing the volume of the terminal device of the new MAC chip, reducing the power consumption of the device, and reducing the production cost. .
  • the MAC chip body 45 is connected to the external service interface module 5 for external services.
  • the interface module 5 performs business interaction.
  • the laser 41 is a III-V laser.
  • the driving circuit 44 can include:
  • a laser driving circuit 441 connected to the MAC chip body 45 and the laser 41, respectively.
  • the laser driving circuit 441 can control the laser 41 to operate according to the signal transmitted by the MAC chip body 45, thereby implementing the optical transceiver function of the MAC chip.
  • the driving circuit 44 may further include:
  • An amplifying circuit 442 connected to the detector 43;
  • Filter circuits 443 connected to the MAC chip body 41 and the amplifier circuit 442, respectively.
  • the signal of the laser 41 detected by the detector 43 may have interference information, and the signal detected by the detector 43 may be amplified and filtered by the amplifying circuit 442 and the filtering circuit 443, so that the signal is recovered, and then passed through the MAC chip body 45. Transfer to the external service interface module 5.
  • the passive device 42, the detector 43, the driving circuit 44, and the MAC chip body 45 are respectively formed on the silicon substrate layer 3 by using a silicon material growth method.
  • the passive device 42, the detector 43, the driving circuit 44, and the MAC chip body 45 achieve a good combination with the silicon substrate layer 3, which increases the stability.
  • the laser 41 since the laser 41 cannot be formed on the silicon base layer 3 by a silicon material growth method, the laser 41 is formed on the silicon base layer 3 by bonding. A good bond between the laser 41 and the silicon substrate layer 3 is also achieved.
  • the silicon dioxide substrate layer 2 is formed on the silicon substrate layer 1 by using a silicon material growth method; and the silicon substrate layer 3 is formed on the silicon dioxide substrate layer 2 by using a silicon material growth manner.
  • the laser 41, the passive device 42, the detector 43, the driving circuit 44, and the MAC chip body 45 are uniformly disposed on the silicon substrate layer 3 in a predetermined manner.
  • the medium access control MAC chip of the embodiment of the present invention adopts a CMOS process, first in silicon On the substrate layer 1, the silicon dioxide underlayer 2 and the silicon underlayer 3 are sequentially grown from bottom to top, and then the element layer 4 is formed on the silicon underlayer 3.
  • the element layer 4 includes a III-V laser uniformly distributed in a predetermined manner.
  • the passive device 42, the detector 43, the driving circuit 44, and the MAC chip body 45, the driving circuit 44 includes a laser driving circuit 441, an amplifying circuit 442, and a filtering circuit 443.
  • the passive device 42, the detector 43, the driving circuit 44 and the MAC chip body 45 are formed on the silicon substrate layer 3 by silicon material growth, and the III-V laser is formed on the silicon substrate layer 3 by bonding.
  • the III-V laser is connected to the detector 43 through the passive device 42.
  • the MAC chip body 45 is connected to the external service interface module 5.
  • the laser driving circuit 441 is respectively connected to the MAC chip body 45 and the III-V laser, and the amplifier circuit is connected.
  • the 442 is connected to the detector 43, and the filter circuit 443 is connected to the MAC chip body 45 and the amplifier circuit 442, respectively.
  • the III-V laser, the passive device 42, the detector 43, and the driving circuit 44 jointly form an optical transceiver function of the MAC chip, forming a novel MAC chip with an optical transceiver function, so that the terminal device of the new MAC chip does not need to be separate.
  • the optical transceiver module is set, thereby reducing the size of the terminal device of the new MAC chip, reducing the power consumption of the device, and reducing the production cost.
  • the medium access control MAC chip of the embodiment of the invention integrates the optical transceiver module with the traditional MAC chip, and forms a novel MAC chip by using a silicon-based hybrid integration method, which not only reduces the volume of the original terminal device, but also reduces the volume of the original terminal device. It reduces the power consumption of the device and provides space for the device to reduce the cost, which has great application prospects.
  • the media access control MAC chip of the embodiment of the present invention is applied to the terminal device. Therefore, the embodiment of the present invention further provides a terminal device, including: the media access control MAC chip as described in the foregoing embodiment.
  • the implementation examples of the media access control MAC chip are applicable to the embodiment of the terminal device, and the same technical effects can be achieved.
  • the laser, the passive component, the detector and the driving circuit jointly form the optical transceiver function of the MAC chip, and form a novel MAC chip with the optical transceiver function, so that the terminal device of the new MAC chip does not need to be separately set.
  • the transceiver module reduces the size of the terminal device of the new MAC chip, reduces the power consumption of the device, and reduces the production cost.

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  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Optics & Photonics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Engineering & Computer Science (AREA)
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Abstract

该申请公开了一种媒体接入控制MAC芯片及终端设备，该MAC芯片包括：硅衬底层（1），在所述硅衬底层（1）的表面上形成有二氧化硅基底层（2），在所述二氧化硅基底层（1）背离所述硅衬底层的表面上形成有硅基底层（3）；在所述硅基底层（3）背离所述二氧化硅基底层（2）的表面上形成有元件层（4），所述元件层（4）包括激光器（41）、无源器件（42）、探测器（43）、驱动电路（44）及MAC芯片本体（45）；其中，所述驱动电路（44）分别与所述激光器（41）、所述探测器（43）及所述MAC芯片本体（45）连接，所述激光器（41）通过所述无源器件（42）与所述探测器（43）连接。

Description

一种媒体接入控制MAC芯片及终端设备 技术领域
本申请涉及但不限于光通信领域。
背景技术
随着高速率、高带宽光通信系统需要进一步减少功耗，缩小体积，降低成本的发展趋势，光通讯系统中的关键元器件的小型化和集成化越来越受到人们的重视。
而相关技术的光通信系统终端设备，由光收发模块，传统MAC(Media Access Control，媒体接入控制)芯片及外围电路组成，该终端设备体积较大，功耗较高，成本上面很难有降低。
发明内容
以下是对本文详细描述的主题的概述。本概述并非是为了限制权利要求的保护范围。
本文提供一种媒体接入控制MAC芯片及终端设备，解决相关技术中的光通信系统终端设备体积大、功耗高、成本难以降低的问题。
本发明的实施例提供一种媒体接入控制MAC芯片，所述MAC芯片包括：
硅衬底层，在所述硅衬底层的表面上形成有二氧化硅基底层，在所述二氧化硅基底层背离所述硅衬底层的表面上形成有硅基底层；
在所述硅基底层背离所述二氧化硅基底层的表面上形成有元件层，所述元件层包括激光器、无源器件、探测器、驱动电路及MAC芯片本体；
可选地，所述驱动电路分别与所述激光器、所述探测器及所述MAC芯片本体连接，所述激光器通过所述无源器件与所述探测器连接。
可选地，所述激光器为Ⅲ-Ⅴ族激光器。
可选地，所述驱动电路包括：
分别与所述MAC芯片本体及所述激光器连接的激光器驱动电路。
可选地，所述驱动电路还包括：
与所述探测器连接的放大电路；
分别与所述MAC芯片本体及所述放大电路连接的滤波电路。
可选地，所述无源器件、所述探测器、所述驱动电路及所述MAC芯片本体分别采用硅材料生长方式形成于所述硅基底层上。
可选地，所述激光器采用键合方式形成于所述硅基底层上。
可选地，所述二氧化硅基底层采用硅材料生长方式形成于所述硅衬底层上；所述硅基底层采用硅材料生长方式形成于所述二氧化硅基底层上。
可选地，所述激光器、所述无源器件、所述探测器、所述驱动电路及所述MAC芯片本体按照预设方式均布于所述硅基底层上。
本发明的实施例还提供了一种终端设备，包括：如上所述的媒体接入控制MAC芯片。
本发明实施例的媒体接入控制MAC芯片，包括由下向上依次形成的硅衬底层、二氧化硅基底层、硅基底层及元件层。其中元件层包括激光器、无源器件、探测器、驱动电路及MAC芯片本体，且驱动电路分别与激光器、探测器及MAC芯片本体连接，激光器通过无源器件与探测器连接。其中，激光器、无源器件、探测器以及驱动电路共同构成了MAC芯片的光收发功能，形成了自带光收发功能的新型MAC芯片，使新型MAC芯片的终端设备无需单独设置光收发模块，从而缩小了新型MAC芯片的终端设备的体积，减小了设备功耗，且降低了生产成本。
在阅读并理解了附图和详细描述后，可以明白其他方面。
附图概述
图1为本发明实施例媒体接入控制MAC芯片的结构示意图；
图2为本发明实施例媒体接入控制MAC芯片的元件层结构示意图。
附图标记说明：
1-硅衬底层，2-二氧化硅基底层，3-硅基底层，4-元件层，41-激光器，42-无源器件，43-探测器，44-驱动电路，441-激光器驱动电路，442-放大电路，443-滤波电路，45-MAC芯片本体，5-外部业务接口模块。
本发明的实施方式
下面将结合附图对本发明的实施方式进行描述。
本发明实施例的媒体接入控制MAC芯片，将光收发模块与传统MAC芯片整合到一起，利用硅基混合集成的方式构成了一种自带光收发功能的新型MAC芯片，解决了相关技术的终端设备体积大、功耗高、成本难以降低的问题。
如图1-2所示，本发明实施例的媒体接入控制MAC芯片，包括：
硅衬底层1，在所述硅衬底层1的表面上形成有二氧化硅基底层2，在所述二氧化硅基底层2背离所述硅衬底层1的表面上形成有硅基底层3；
在所述硅基底层3背离所述二氧化硅基底层2的表面上形成有元件层4，所述元件层4包括激光器41、无源器件42、探测器43、驱动电路44及MAC芯片本体45；
其中，所述驱动电路44分别与所述激光器41、所述探测器43及所述MAC芯片本体45连接，所述激光器41通过所述无源器件42与所述探测器43连接。
本发明实施例的媒体接入控制MAC芯片，采用CMOS工艺，首先在硅衬底层1上由下向上依次形成二氧化硅基底层2、硅基底层3，然后在硅基底层3上形成元件层4，其中元件层4的激光器41、无源器件42、探测器43以及驱动电路44共同构成了MAC芯片的光收发功能。形成了自带光收发功能的新型MAC芯片，使新型MAC芯片的终端设备无需单独设置光收发模块，从而缩小了新型MAC芯片的终端设备的体积，减小了设备功耗，且降低了生产成本。
其中，MAC芯片本体45与外部业务接口模块5连接，用于与外部业务 接口模块5进行业务交互。
本发明的实施例中，所述激光器41为Ⅲ-Ⅴ族激光器。
其中，所述驱动电路44可以包括：
分别与所述MAC芯片本体45及所述激光器41连接的激光器驱动电路441。
此时，激光器驱动电路441可根据MAC芯片本体45传递的信号控制激光器41进行工作，进而实现MAC芯片的光收发功能。
所述驱动电路44还可以包括：
与所述探测器43连接的放大电路442；
分别与所述MAC芯片本体41及所述放大电路442连接的滤波电路443。
此时，探测器43探测得到的激光器41信号可能存在干扰信息，通过放大电路442及滤波电路443可将探测器43探测得到的信号进行放大和滤波，使信号得以恢复，然后通过MAC芯片本体45传送给外部业务接口模块5。
可选的，所述无源器件42、所述探测器43、所述驱动电路44及所述MAC芯片本体45分别采用硅材料生长方式形成于所述硅基底层3上。
此时，无源器件42、探测器43、驱动电路44及MAC芯片本体45与硅基底层3实现了良好的结合，增加了稳固性。
其中，由于激光器41无法采用硅材料生长方式形成于硅基底层3上，所述激光器41采用键合方式形成于所述硅基底层3上。同样实现了激光器41与硅基底层3之间的良好结合。
可选的，所述二氧化硅基底层2采用硅材料生长方式形成于所述硅衬底层1上；所述硅基底层3采用硅材料生长方式形成于所述二氧化硅基底层2上。
所述激光器41、所述无源器件42、所述探测器43、所述驱动电路44及所述MAC芯片本体45按照预设方式均布于所述硅基底层3上。
下面对本发明实施例举例说明如下。
本发明实施例的媒体接入控制MAC芯片，采用CMOS工艺，首先在硅 衬底层1上由下向上依次生长二氧化硅基底层2、硅基底层3，然后在硅基底层3上形成元件层4，元件层4包括按照预设方式均布的Ⅲ-Ⅴ族激光器、无源器件42、探测器43、驱动电路44及MAC芯片本体45，驱动电路44包括激光器驱动电路441、放大电路442及滤波电路443。其中无源器件42、探测器43、驱动电路44及MAC芯片本体45采用硅材料生长方式形成于硅基底层3上，Ⅲ-Ⅴ族激光器采用键合方式形成于硅基底层3上。其中，Ⅲ-Ⅴ族激光器通过无源器件42与探测器43连接，MAC芯片本体45与外部业务接口模块5连接，激光器驱动电路441分别与MAC芯片本体45及Ⅲ-Ⅴ族激光器连接，放大电路442与探测器43连接，滤波电路443分别与MAC芯片本体45及放大电路442连接。通过Ⅲ-Ⅴ族激光器、无源器件42、探测器43以及驱动电路44共同构成了MAC芯片的光收发功能，形成了自带光收发功能的新型MAC芯片，使新型MAC芯片的终端设备无需单独设置光收发模块，从而缩小了新型MAC芯片的终端设备的体积，减小了设备功耗，且降低了生产成本。
本发明实施例的媒体接入控制MAC芯片，将光收发模块与传统MAC芯片整合到一起，利用硅基混合集成的方式构成了一种新型的MAC芯片，不但缩小了原来终端设备的体积，而且减少了设备功耗，同时为设备降低成本提供了空间，有很大的应用前景。
由于本发明实施例的媒体接入控制MAC芯片应用于终端设备，因此，本发明实施例还提供了一种终端设备，包括：如上述实施例中所述的媒体接入控制MAC芯片。其中，上述媒体接入控制MAC芯片的所述实现实例均适用于该终端设备的实施例中，也能达到相同的技术效果。
工业实用性
本发明实施例中，激光器、无源器件、探测器以及驱动电路共同构成了MAC芯片的光收发功能，形成了自带光收发功能的新型MAC芯片，使新型MAC芯片的终端设备无需单独设置光收发模块，从而缩小了新型MAC芯片的终端设备的体积，减小了设备功耗，且降低了生产成本。

Claims (9)

  1. 一种媒体接入控制MAC芯片，所述MAC芯片包括：
    硅衬底层，在所述硅衬底层的表面上形成有二氧化硅基底层，在所述二氧化硅基底层背离所述硅衬底层的表面上形成有硅基底层；
    在所述硅基底层背离所述二氧化硅基底层的表面上形成有元件层，所述元件层包括激光器、无源器件、探测器、驱动电路及MAC芯片本体；
    其中，所述驱动电路分别与所述激光器、所述探测器及所述MAC芯片本体连接，所述激光器通过所述无源器件与所述探测器连接。
  2. 根据权利要求1所述的MAC芯片，其中，所述激光器为Ⅲ-Ⅴ族激光器。
  3. 根据权利要求1所述的MAC芯片，其中，所述驱动电路包括：
    分别与所述MAC芯片本体及所述激光器连接的激光器驱动电路。
  4. 根据权利要求3所述的MAC芯片，其中，所述驱动电路还包括：
    与所述探测器连接的放大电路；
    分别与所述MAC芯片本体及所述放大电路连接的滤波电路。
  5. 根据权利要求1所述的MAC芯片，其中，所述无源器件、所述探测器、所述驱动电路及所述MAC芯片本体分别采用硅材料生长方式形成于所述硅基底层上。
  6. 根据权利要求1所述的MAC芯片，其中，所述激光器采用键合方式形成于所述硅基底层上。
  7. 根据权利要求1所述的MAC芯片，其中，所述二氧化硅基底层采用硅材料生长方式形成于所述硅衬底层上；所述硅基底层采用硅材料生长方式形成于所述二氧化硅基底层上。
  8. 根据权利要求1所述的MAC芯片，其中，所述激光器、所述无源器件、所述探测器、所述驱动电路及所述MAC芯片本体按照预设方式均布于所述硅基底层上。
  9. 一种终端设备，包括：如权利要求1-8任一项所述的媒体接入控制MAC芯片。
PCT/CN2016/071230 2015-02-05 2016-01-18 一种媒体接入控制mac芯片及终端设备 Ceased WO2016124076A1 (zh)

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