WO2016138725A1 - 阵列基板及其制作方法、x射线平板探测器、摄像系统 - Google Patents

阵列基板及其制作方法、x射线平板探测器、摄像系统 Download PDF

Info

Publication number
WO2016138725A1
WO2016138725A1 PCT/CN2015/084549 CN2015084549W WO2016138725A1 WO 2016138725 A1 WO2016138725 A1 WO 2016138725A1 CN 2015084549 W CN2015084549 W CN 2015084549W WO 2016138725 A1 WO2016138725 A1 WO 2016138725A1
Authority
WO
WIPO (PCT)
Prior art keywords
electrode
array substrate
photoelectric conversion
layer
reflective layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/CN2015/084549
Other languages
English (en)
French (fr)
Inventor
舒适
高锦成
徐传祥
张锋
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
BOE Technology Group Co Ltd
Original Assignee
BOE Technology Group Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by BOE Technology Group Co Ltd filed Critical BOE Technology Group Co Ltd
Priority to KR1020167031386A priority Critical patent/KR101921402B1/ko
Priority to US14/913,174 priority patent/US9735195B2/en
Priority to JP2016570288A priority patent/JP6588473B2/ja
Priority to EP15832862.5A priority patent/EP3267483B1/en
Publication of WO2016138725A1 publication Critical patent/WO2016138725A1/zh
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

Links

Images

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
    • H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
    • H10F30/29—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to radiation having very short wavelengths, e.g. X-rays, gamma-rays or corpuscular radiation
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/011—Manufacture or treatment of image sensors covered by group H10F39/12
    • H10F39/016—Manufacture or treatment of image sensors covered by group H10F39/12 of thin-film-based image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/011—Manufacture or treatment of image sensors covered by group H10F39/12
    • H10F39/024—Manufacture or treatment of image sensors covered by group H10F39/12 of coatings or optical elements
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/103—Integrated devices the at least one element covered by H10F30/00 having potential barriers, e.g. integrated devices comprising photodiodes or phototransistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/107—Integrated devices having multiple elements covered by H10F30/00 in a repetitive configuration, e.g. radiation detectors comprising photodiode arrays
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/18—Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors
    • H10F39/189—X-ray, gamma-ray or corpuscular radiation imagers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/803—Pixels having integrated switching, control, storage or amplification elements
    • H10F39/8037—Pixels having integrated switching, control, storage or amplification elements the integrated elements comprising a transistor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/805—Coatings
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/806—Optical elements or arrangements associated with the image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/806—Optical elements or arrangements associated with the image sensors
    • H10F39/8067—Reflectors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/811—Interconnections
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/16—Material structures, e.g. crystalline structures, film structures or crystal plane orientations
    • H10F77/162—Non-monocrystalline materials, e.g. semiconductor particles embedded in insulating materials
    • H10F77/166—Amorphous semiconductors
    • H10F77/1662—Amorphous semiconductors including only Group IV materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/20—Electrodes
    • H10F77/206—Electrodes for devices having potential barriers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/40—Optical elements or arrangements
    • H10F77/413—Optical elements or arrangements directly associated or integrated with the devices, e.g. back reflectors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/40—Optical elements or arrangements
    • H10F77/496—Luminescent members, e.g. fluorescent sheets
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/548—Amorphous silicon PV cells

Definitions

  • Embodiments of the present invention relate to an array substrate and a method of fabricating the same, an X-ray flat panel detector including the array substrate, and an imaging system including the X-ray flat panel detector.
  • the flat panel detection technology can be divided into direct and indirect categories.
  • the key component of the indirect flat panel detector is the flat panel detector (FPD) for acquiring images.
  • the X-ray flat panel detector includes an array substrate including an X-ray conversion layer, and each of the detection units of the array substrate includes a thin film transistor and an amorphous silicon photodiode.
  • the amorphous silicon photodiode starts to work under the action of a reverse voltage.
  • the X-ray illuminates the array substrate
  • the X-ray conversion layer converts the X-ray into visible light
  • the amorphous silicon photodiode converts the visible light into an electrical signal and stores it.
  • the thin film transistor Under the action of the driving circuit, the thin film transistor is turned on line by line, the charge converted by the photodiode is transmitted to the data processing circuit, and the data processing circuit further processes the electric signal, performs analog/digital conversion, and finally obtains an image. information.
  • the amorphous silicon film in the amorphous silicon photodiode has a photo-induced degradation effect, resulting in a decrease in photoelectric conversion efficiency of the photodiode after a long period of illumination.
  • the thickness of the amorphous silicon film can be reduced, and the thickness of the amorphous silicon film can be reduced, the incident light can not be sufficiently absorbed, and a large amount of light is transmitted through the photodiode element to reduce the photoelectricity. Diode conversion efficiency.
  • an array substrate is provided, the array substrate is divided into a plurality of detecting units, and each of the detecting units is provided with a first electrode and a photoelectric conversion structure, wherein the first electrode And being electrically connected to the photoelectric conversion structure, wherein the first electrode and the photoelectric conversion structure further comprise a conductive reflective layer, The surface of the reflective layer facing the photoelectric conversion structure is a reflective surface.
  • the reflective layer is a conductive film layer that is electrically connected to the first electrode.
  • the reflective layer is formed in a unitary structure with the first electrode.
  • the material of the first electrode includes an oxide of a conductive metal
  • the reflective layer is formed of a simple substance of the metal
  • the reflective layer is formed of a simple substance of the metal obtained by a reduction reaction of a surface of the first electrode toward the light-emitting conversion structure.
  • the metal oxide is indium tin oxide
  • the reflective layer is formed of a simple substance of tin obtained by a reduction reaction of the indium tin oxide.
  • each of the detecting units further includes a thin film transistor, and an insulating layer is disposed between the thin film transistor and the first electrode, and the insulating layer corresponds to a source of the thin film transistor The location is provided with a via, and the first electrode is connected to the source of the thin film transistor through the via.
  • the photoelectric conversion structure includes a photodiode and a second electrode, a cathode layer of the photodiode being connected to the first electrode, and an anode layer of the photodiode being connected to the second electrode.
  • a method for fabricating an array substrate includes:
  • the surface of the reflective layer facing the photoelectric conversion structure is a reflective surface.
  • the step of forming a pattern of conductive reflective layers includes:
  • a conductive film layer is formed on the first electrode.
  • the reflective layer is formed in a unitary structure with the first electrode.
  • the material of the first electrode comprises a conductive metal oxide
  • the step of forming a conductive reflective layer comprises:
  • a reducing gas is introduced into the reaction chamber to precipitate a part of the metal in the metal oxide.
  • the metal oxide is indium tin oxide.
  • the reducing gas is hydrogen
  • the hydrogen gas has a gas flow rate of 20 to 500 sccm, an introduction time of 10 to 200 s, and a reaction chamber pressure of 100 to 300 mT, and the reaction chamber is used to form a plasma.
  • the electrode power is: 400 to 800W.
  • the step of forming a pattern including the first electrode in each of the detecting units further comprises: forming a thin film transistor in each of the detecting units;
  • a via hole is formed on the insulating layer at a position corresponding to a source of the thin film transistor such that the first electrode is connected to a source of the thin film transistor.
  • the step of forming a photoelectric conversion structure includes:
  • a pattern including a transparent second electrode is formed over the anode layer of the photodiode.
  • an X-ray flat panel detector comprising the array substrate according to any one of the above items and an X-ray conversion layer disposed on the photoelectric conversion structure of the array substrate.
  • an imaging system including the above-described X-ray flat panel detector and display device is provided.
  • the camera system further includes a control device configured to convert an electrical signal detected by the X-ray flat panel detector into an image signal and to control the display device to display an image corresponding to the image signal.
  • FIG. 1 is a schematic structural view of a flat panel detector according to an embodiment of the present invention.
  • FIG. 2 is a schematic diagram showing an equivalent circuit of an array substrate according to an embodiment of the present invention.
  • FIG. 3 is a schematic block diagram of an imaging system according to an embodiment of the present invention.
  • At least one embodiment of the present invention provides an array substrate, the array substrate is divided into a plurality of detecting units, as shown in FIG. 1, each of the detecting units is provided with a first electrode 20 and a photoelectric conversion structure 30,
  • the photoelectric conversion structure 30 is electrically connected to the first electrode 20, wherein the reflective layer 40 capable of conducting electricity is further included between the first electrode 20 and the photoelectric conversion structure 30, and the surface of the reflective layer 40 facing the photoelectric conversion structure 30 is a reflective surface.
  • light rays are incident on the photoelectric conversion structure 30 above the photoelectric conversion structure 30, and the upper side of the photoelectric conversion structure 30 may be referred to as a light incident side.
  • the first electrode 20 and the reflective layer are both disposed on opposite sides of the light incident side of the photovoltaic structure 30.
  • the photoelectric conversion structure 30 is configured to convert incident light into an electrical signal and transmit it to the first electrode 20, because the reflective layer 40 is included between the first electrode 20 of the array substrate and the photoelectric conversion structure 30. After the photoelectric conversion structure 30 converts part of the incident light into an electrical signal, the other incident light that has not been converted into an electrical signal passes through the photoelectric conversion structure 30 again after being reflected by the reflective layer 40, so that the photoelectric conversion structure 30 performs photoelectric conversion again. Thereby improving the utilization of light.
  • the photoelectric conversion unit 30 may include a photodiode 31.
  • the photodiode 31 includes an N-type amorphous silicon film layer 31a, an intrinsic amorphous silicon film layer 31b disposed over the N-type amorphous silicon film layer 31a, and an intrinsic amorphous silicon film.
  • the P-type amorphous silicon film layer 31c above the layer 31b.
  • the photodiode 31 generates a hole electron pair under irradiation of visible light, and the electron moves toward the N-type amorphous silicon film layer, and the hole moves toward the P-type amorphous silicon film layer.
  • the reflective layer 40 may be a conductive film layer connected to the first electrode 20, and the reflective layer 40 may also be a reflective film layer formed between the first electrode 20 and the photoelectric conversion structure 30.
  • a metal reflective film layer For example, a film layer that is opaque to light may be formed on the upper surface of the first electrode by vapor deposition, and visible light rays that have not been converted by the photoelectric conversion structure 30 may be reflected back to the photoelectric conversion structure 30 via the conductive film layer.
  • the reflective layer 40 and the first electrode 20 are formed in a unitary structure.
  • the material from which the first electrode 20 is made may include a metal oxide capable of conducting electricity, and the reflective layer 40 is formed of a metal element layer obtained by reducing the surface of the first electrode 20 toward the surface of the light emitting diode 30, thereby avoiding the introduction of other metals.
  • the material acts as a reflective layer, simplifying the manufacturing process.
  • the metal oxide may be indium tin oxide
  • the reflective layer 40 is formed of a simple substance of tin obtained by a reduction reaction of the indium tin oxide.
  • the precipitation of the simple substance of tin reduces the light transmittance of the originally transparent first electrode, and is formed as the reflective layer on the surface of the first electrode, so that the incident light can be diffusely reflected.
  • each detecting unit of the array substrate further includes a thin film transistor 70 disposed on the substrate 10, and an insulating layer 80 is disposed between the thin film transistor 70 and the first electrode.
  • a via hole is disposed on the insulating layer 80 at a position corresponding to the source of the thin film transistor 70, and the first electrode 20 is connected to the source of the thin film transistor 70 through the via hole.
  • the present invention does not strictly distinguish the source and the drain of the thin film transistor 70.
  • the first electrode 20 may be connected to the source of the thin film transistor 70 or may be connected to the drain.
  • the photoelectric conversion structure 30 may include a photodiode 31 and a second electrode 32.
  • the cathode layer of the photodiode 31 is connected to the first electrode 20, and the anode layer of the photodiode 31 is connected to the second electrode 32.
  • the photodiode 31 may include an N-type amorphous silicon film layer 31a, an intrinsic amorphous silicon film layer 31b, and a P-type amorphous silicon film layer 31c.
  • the cathode layer of the photodiode 31 is an N-type amorphous silicon film layer 31a, and the anode layer is a P-type amorphous silicon film layer 31c.
  • the 2 is an equivalent circuit diagram of the array substrate.
  • the array substrate is provided with a gate line G and a data line D.
  • the gate line G and the data line D divide the array substrate into a plurality of detecting units.
  • a reverse voltage is applied to the second electrode 32 to turn on the photodiode 31.
  • the photodiode 31 photoelectrically converts part of visible light, thereby generating electron-hole pairs.
  • the electrons move toward the first electrode 20 under the action of an electric field.
  • the driving circuit 91 supplies a driving signal to the detecting unit row by row to turn on the thin film transistor 70 in the detecting unit row by row, so that the first electrode 20 is electrically connected to the data processing circuit 92 through the source and drain of the thin film transistor 70. Thereby, the amount of charge on the first electrode 20 is detected.
  • At least one embodiment of the present invention provides a method for fabricating an array substrate, including:
  • a photoelectric conversion structure is formed on the pattern of the conductive reflective layer; wherein a surface of the reflective layer facing the photoelectric conversion structure is a reflective surface.
  • the forming of the pattern including the reflective layer capable of conducting electricity may include: on the first electrode
  • the square forms a conductive film layer.
  • a conductive material forming a reflective layer may be deposited on the first electrode, and then a pattern including the reflective layer is formed by a photolithographic patterning process.
  • the reflective layer may also be formed in a unitary structure with the first electrode.
  • the material forming the first electrode includes a metal oxide capable of conducting electricity
  • the step of forming a reflective layer including a conductive layer includes:
  • a reducing gas is introduced into the reaction chamber to precipitate a part of the metal in the metal oxide.
  • the metal oxide is indium tin oxide.
  • the reducing gas may be hydrogen, and the hydrogen is reduced with indium tin oxide to precipitate a part of the tin in the indium tin oxide, and the tin element is The surface of the first electrode is formed as the reflective layer.
  • the first electrode may also be other metal oxides, such as indium zinc oxide (IZO), and a reducing gas for reducing zinc elemental substances is introduced, so that zinc element in the indium zinc oxide is precipitated to form the reflection.
  • IZO indium zinc oxide
  • a reducing gas for reducing zinc elemental substances is introduced, so that zinc element in the indium zinc oxide is precipitated to form the reflection.
  • the process parameters are: gas flow rate of hydrogen: 20 to 500 sccm, introduction time: 10 to 200 s, pressure of the reaction chamber: 100 to 300 mT, use of the reaction chamber
  • the electrode power for forming a plasma is 400 to 800 W.
  • the precipitation state of the metal element can be controlled by adjusting various process parameters. For example, by adjusting various parameters such that the metal element is precipitated, the light transmittance of the integrated structure formed by the first electrode and the metal element is not When the metal element is precipitated, the light transmittance of the first electrode is 20% to 30%.
  • the gas flow rate of the hydrogen gas is 200 sccm
  • the introduction time is 100 s
  • the gas pressure of the reaction chamber is 200 mT
  • the power of the electrode for forming a plasma in the reaction chamber is 600 W.
  • step of forming a pattern including the first electrode in each of the detecting units further comprising: forming a thin film transistor in each of the detecting units;
  • a via hole is formed on the insulating layer at a position corresponding to a source of the thin film transistor such that the first electrode is connected to a source of the thin film transistor.
  • a pattern including a gate electrode is formed on a substrate. That is, a gate metal layer is formed on the substrate, and then a pattern including a gate electrode is formed by a patterning process.
  • the array substrate may further include a gate line, The gate line can be formed in synchronization with the gate;
  • a pattern including a source and a drain is formed.
  • the gate insulating layer may be deposited first, then the source and drain metal layers are formed on the gate insulating layer, and the source and drain electrodes are formed by a photolithographic patterning process;
  • an insulating layer is formed and a via is formed on the insulating layer corresponding to the source, the via being used to connect the first electrode and the source.
  • the first electrode material layer is first deposited, and since the via hole is disposed at a position corresponding to the source, the first electrode material layer is connected to the source through the via hole, and then formed by a photolithography patterning process. The pattern of the first electrode.
  • the photoelectric conversion structure may include a second electrode and a photodiode, and the step of forming the photoelectric conversion structure may include:
  • a pattern comprising a transparent second electrode is formed over the anode layer of the photodiode.
  • a reflective layer is disposed between the first electrode and the photoelectric conversion structure, and the incident light passing through the photodiode is reflected again by the reflective layer.
  • the photoelectric conversion structure provides light utilization.
  • the metal element in the first electrode is precipitated by the reducing gas to form a reflective layer, so that it is not necessary to introduce other materials to form the reflective layer, which simplifies the manufacturing process, and at the same time, the reflective layer can block the thin film transistor without being fabricated.
  • An additional light shielding layer protects the thin film transistor, reducing manufacturing costs.
  • At least one embodiment of the present invention provides an X-ray flat panel detector comprising the above array substrate and an X-ray conversion layer 60 (shown in FIG. 1) disposed on the photoelectric conversion structure of the array substrate.
  • the X-ray conversion layer 60 is a film layer including a scintillator capable of converting X-ray photons into visible light after X-ray exposure, and the scintillator may be cesium iodide.
  • the X-ray conversion layer can convert X-rays into visible light
  • the photoelectric conversion structure in each detection unit can convert the visible light into an electrical signal.
  • the driving circuit of the array substrate detects the signals of the detecting unit on the array substrate line by line by providing a driving signal to open the thin film transistors on the array substrate line by line. Since the array substrate provided by the embodiment of the present invention can improve the utilization of light, the X-ray plate including the array substrate The detection accuracy of the detector is also increased accordingly.
  • At least one embodiment of the present invention provides an imaging system including the above-described X-ray flat panel detector and display device.
  • the camera system also includes control means, as shown in FIG.
  • the camera system is applied to a medical examination, and an electrical signal detected by the X-ray flat panel detector can be transmitted to a control device (such as a computer), and the control device converts the electrical signal into an image signal, and controls the display device to display the corresponding The image thus visually shows the distribution of X-rays. Since the detection accuracy of the X-ray flat panel detector in the embodiment of the present invention is high, the image displayed in the imaging system is more clear and accurate.

Landscapes

  • Solid State Image Pick-Up Elements (AREA)
  • Light Receiving Elements (AREA)
  • Measurement Of Radiation (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)

Abstract

一种阵列基板及其制作方法、X射线平板探测器和摄像系统。所述阵列基板被划分为多个检测单元，每个所述检测单元内均设置有第一电极(20)和光电转换结构(30)，所述第一电极(20)设置在所述光电转换结构(30)的入光侧的相反侧且与所述光电转换结构(30)电连接，其中，所述第一电极(20)和所述光电转换结构(30)之间还包括有导电的反射层(40)，所述反射层(40)朝向所述光电转换结构(30)的表面为反射面。本发明实施例所述的阵列基板能够提高光线的利用率，使得X射线平板探测器的检测精度提高。

Description

阵列基板及其制作方法、X射线平板探测器、摄像系统 技术领域
本发明的实施例涉及一种阵列基板及其制作方法、一种包括所述阵列基板的X射线平板探测器，以及包括所述X射线平板探测器的摄像系统。
背景技术
近年来平板探测技术取得飞跃性的发展，平板探测技术可分为直接和间接两类，间接平板探测器的关键部件是获取图像的平板探测器(FPD)。X射线平板探测器包括阵列基板，该阵列基板包括X射线转化层，阵列基板的每个检测单元中包括薄膜晶体管和非晶硅光电二极管。非晶硅光电二极管在反向电压作用下开始工作，当X射线照射阵列基板时，X射线转化层将X射线转化为可见光，再由非晶硅光电二极管将可见光转化为电信号，并进行存储，在驱动电路的作用下，薄膜晶体管被逐行开启，光电二极管所转换的电荷被传输到数据处理电路，数据处理电路会对电信号作进一步的放大、模/数转换等处理，最终获得图像信息。
非晶硅光电二极管中的非晶硅薄膜存在光致衰退效应，导致光电二极管经长时间光照后光电转化效率下降。为了减少光致衰退现象的发生，可以将非晶硅薄膜的厚度减薄，而减薄非晶硅薄膜厚度，入射光不能充分地被吸收，会有大量的光透过光电二极管元件，降低光电二极管的转化效率。
发明内容
根据本发明的一个实施例提供一种阵列基板，所述阵列基板被划分为多个检测单元，每个所述检测单元内均设置有第一电极和光电转换结构，其中，所述第一电极设置在所述光电转换结构的入光侧的相反侧，且与所述光电转换结构电连接，其中，所述第一电极和所述光电转换结构之间还包括有导电的反射层，所述反射层朝向所述光电转换结构的表面为反射面。
在一些示例中，所述反射层为与所述第一电极电相连的导电膜层。
在一些示例中，所述反射层与所述第一电极形成为一体结构。
在一些示例中，所述第一电极的材料包括导电金属的氧化物，所述反射层由所述金属的单质形成。
在一些示例中，所述反射层由对所述第一电极的朝向所述发光转换结构的表面进行还原反应得到的所述金属的单质形成。
在一些示例中，所述金属氧化物为氧化铟锡，所述反射层由对所述氧化铟锡进行还原反应得到的锡单质形成。
在一些示例中，每个所述检测单元中还包括一个薄膜晶体管，所述薄膜晶体管与所述第一电极之间设置有绝缘层，所述绝缘层上与所述薄膜晶体管的源极相对应的位置设置有过孔，所述第一电极通过所述过孔与所述薄膜晶体管的源极相连。
在一些示例中，所述光电转换结构包括光电二极管和第二电极，所述光电二极管的阴极层与所述第一电极相连，所述光电二极管的阳极层与所述第二电极相连。
根据本发明的另一个实施例提供一种阵列基板的制作方法，包括：
将阵列基板划分为多个检测单元；
在每个所述检测单元内形成包括第一电极的图形；
在所述第一电极的图形上形成导电的反射层的图形；
在所述导电的反射层的图形上形成光电转换结构，
其中，所述反射层的朝向所述光电转换结构的表面为反射面。
在一些示例中，形成导电的反射层的图形的步骤包括：
在所述第一电极上形成导电膜层。
在一些示例中，所述反射层与所述第一电极形成为一体结构。
在一些示例中，所述第一电极的材料包括导电的金属氧化物，形成导电的反射层的步骤包括：
向反应腔室通入还原性气体，以使得所述金属氧化物中的部分金属单质析出。
在一些示例中，所述金属氧化物为氧化铟锡。
在一些示例中，所述还原性气体为氢气。
在一些示例中，所述氢气的气体流量为：20～500sccm，通入时间为：10～200s，反应腔室的气压为：100～300mT，反应腔室的用于形成等离子体的 电极功率为：400～800W。
在一些示例中，在每个所述检测单元内形成包括第一电极的图形的步骤之前还包括：在每个所述检测单元内形成薄膜晶体管；
在所述薄膜晶体管上方形成绝缘层；
在所述绝缘层上对应于薄膜晶体管的源极的位置形成过孔，以使得第一电极与所述薄膜晶体管的源极相连。
在一些示例中，所述形成光电转换结构的步骤包括：
形成光电二极管，该光电二极管的阴极层与所述第一电极相连；
在所述光电二极管的阳极层上方形成包括透明的第二电极的图形。
根据本发明的另一个实施例提供一种X射线平板探测器，包括上述任意一项所述的阵列基板和设置在所述阵列基板的光电转换结构上的X射线转换层。
根据本发明的再一个实施例提供一种摄像系统，包括上述X射线平板探测器和显示装置。
在一些示例中，摄像系统还包括控制装置，所述控制装置被构造为将所述X射线平板探测器检测的电信号转换为图像信号，并控制显示装置显示对应于所述图像信号的图像。
附图说明
为了更清楚地说明本发明实施例的技术方案，下面将对实施例的附图作简单地介绍，显而易见地，下面描述中的附图仅仅涉及本发明的一些实施例，而非对本发明的限制。
图1是本发明一实施例X平板探测器的结构示意图；
图2是本发明一实施例阵列基板的等效电路示意图；
图3为本发明一实施例的摄像系统的示意性框图。
具体实施方式
为使本发明实施例的目的、技术方案和优点更加清楚，下面将结合本发明实施例的附图，对本发明实施例的技术方案进行清楚、完整地描述。显然，所描述的实施例是本发明的一部分实施例，而不是全部的实施例。基于所描 述的本发明的实施例，本领域普通技术人员在无需创造性劳动的前提下所获得的所有其他实施例，都属于本发明保护的范围。
本发明至少一实施例提供一种阵列基板，所述阵列基板被划分为多个检测单元，如图1所示，每个所述检测单元内均设置有第一电极20和光电转换结构30，光电转换结构30与第一电极20电连接，其中，第一电极20和光电转换结构30之间还包括有能够导电的反射层40，反射层40朝向光电转换结构30的表面为反射面。例如，如图1所示，光线在光电转换结构30的上方入射到光电转换结构30中，可以将光电转换结构30的上侧称为入光侧。那么，第一电极20和反射层均设置在光电结构30的入光侧的相反侧。
本发明至少一实施例中，光电转换结构30用于将入射光线转换为电信号，并传输至第一电极20，由于阵列基板的第一电极20和光电转换结构30之间包括有反射层40，光电转换结构30将部分入射光线转换为电信号后，未转换为电信号的其他入射光线经过反射层40的反射后会再次经过光电转换结构30，以使得光电转换结构30再次进行光电转换，从而提高光线的利用率。
光电转换单元30可以包括光电二极管31。例如，如图1所示，光电二极管31包括N型非晶硅膜层31a、设置在N型非晶硅膜层31a上方的本征非晶硅膜层31b、设置在本征非晶硅膜层31b上方的P型非晶硅膜层31c。光电二极管31在可见光的照射下产生空穴电子对，电子朝向N型非晶硅膜层移动，空穴朝向P型非晶硅膜层移动。
本发明的实施例对反射层40与第一电极20之间的连接形式不作具体限定。本发明至少一实施例中，反射层40可以为与第一电极20相连的导电膜层，反射层40也可以为形成在第一电极20和光电转换结构30之间的一层反光膜层，例如金属反光膜层。例如，可以利用气相沉积的方式在第一电极的上表面形成一层不透光的膜层，未经过光电转换结构30转换的可见光线可以经所述导电膜层反射回光电转换结构30。
本发明至少一实施例中，反射层40与第一电极20形成为一体结构。
例如，制成第一电极20的材料可以包括能够导电的金属氧化物，反射层40由对第一电极20的朝向发光二极管30的表面进行还原反应得到的金属单质层形成，从而避免了引入其他材料作为反射层，简化了制作工艺。
例如，所述金属氧化物可以为氧化铟锡，反射层40由对所述氧化铟锡进行还原反应得到的锡单质形成。锡单质的析出使得原本透明的第一电极的透光率减小，在第一电极的表面形成为所述反射层，从而可以对入射光线进行漫反射。
进一步地，如图1所示，所述阵列基板的每个检测单元内还包括薄膜晶体管70，该薄膜晶体管70设置在基底10上，薄膜晶体管70与第一电极之间设置有绝缘层80，绝缘层80上与薄膜晶体管70的源极相对应的位置设置有过孔，第一电极20通过所述过孔与薄膜晶体管70的源极相连。本发明对薄膜晶体管70的源极和漏极并没有严格的区分，第一电极20可以与薄膜晶体管70的源极相连，也可以与漏极相连。
如图1所示，光电转换结构30可以包括光电二极管31和第二电极32，光电二极管31的阴极层与第一电极20相连，光电二极管的31的阳极层与第二电极32相连。如上文中所述，光电二极管31可以包括N型非晶硅膜层31a、本征非晶硅膜层31b和P型非晶硅膜层31c。光电二极管31的阴极层即为N型非晶硅膜层31a，阳极层即为P型非晶硅膜层31c。
如图2所示为阵列基板的等效电路示意图，阵列基板上设置有栅线G和数据线D，栅线G和数据线D将阵列基板划分为多个检测单元。当阵列基板工作时，向第二电极32上施加反向电压以开启光电二极管31。一旦有可见光线照射阵列基板，光电二极管31将部分可见光进行光电转换，从而产生电子空穴对。电子在电场的作用下朝向第一电极20移动。在信号读取时，驱动电路91逐行向检测单元提供驱动信号，以逐行开启检测单元内的薄膜晶体管70，使得第一电极20通过薄膜晶体管70的源漏极与数据处理电路92导通，从而检测出第一电极20上的电荷量。
本发明至少一实施例提供一种阵列基板的制作方法，包括：
将阵列基板划分为多个检测单元；
在每个所述检测单元内形成包括第一电极的图形；
在所述第一电极的图形上形成包括能够导电的反射层的图形；
在所述导电的反射层的图形上形成光电转换结构；其中，所述反射层的朝向所述光电转换结构的表面为反射面。
形成包括能够导电的反射层的图形的步骤可以包括：在所述第一电极上 方形成导电膜层。例如，可以先在第一电极上沉积制作反射层的导电材料，之后通过光刻构图工艺形成包括反射层的图形。
如上文中所述，所述反射层还可以与所述第一电极形成为一体结构。
例如，形成所述第一电极的材料包括能够导电的金属氧化物，形成包括能够导电的反射层的步骤包括：
向反应腔室通入还原性气体，以使得所述金属氧化物中的部分金属单质析出。
例如，所述金属氧化物为氧化铟锡。当形成所述第一电极的材料包括氧化铟锡时，所述还原性气体可以为氢气，氢气与氧化铟锡发生还原反应，以使得所述氧化铟锡中的部分锡单质析出，锡单质在第一电极的表面形成为所述反射层。
当然，所述第一电极也可以为其他金属氧化物，如氧化铟锌(IZO)，通入用于还原出锌单质的还原性气体，使得氧化铟锌中的锌单质析出，形成所述反射层。
例如，向反应腔室内通入氢气时，工艺参数为：氢气的气体流量为：20～500sccm，通入时间为：10～200s，反应腔室的气压为：100～300mT，反应腔室的用于形成等离子体的电极功率为：400～800W。
在工艺过程中，可以通过调节各个工艺参数来控制所述金属单质的析出状况，例如，通过调节各参数使得析出金属单质后，第一电极和金属单质形成的一体结构的光透过率为未析出金属单质时第一电极的光透过率的20％～30％。
例如，所述氢气的气体流量为200sccm，通入时间为100s，反应腔室的气压为200mT，反应腔室的用于形成等离子体的电极功率为600W。
进一步地，在每个所述检测单元内形成包括第一电极的图形的步骤之前还包括：在每个所述检测单元内形成薄膜晶体管；
在所述薄膜晶体管上方形成绝缘层；
在所述绝缘层上对应于薄膜晶体管的源极的位置形成过孔，以使得第一电极与所述薄膜晶体管的源极相连。
例如，首先，在基底上形成包括栅极的图形。即在基底上形成栅金属层，然后通过构图工艺形成包括栅极的图形。所述阵列基板还可以包括栅线，所 述栅线可以和栅极同步形成；
然后，形成包括源极和漏极的图形。形成栅极后，可以先沉积栅极绝缘层，然后在栅极绝缘层上形成源漏金属层，再通过光刻构图工艺形成源、漏电极；
再次，形成绝缘层，并在绝缘层上对应于源极的位置形成过孔，该过孔用于连接第一电极和源极。在形成第一电极时，首先沉积第一电极材料层，由于过孔设置在对应于源极的位置，因此第一电极材料层会通过过孔与源极相连，之后通过光刻构图工艺形成包括第一电极的图形。
如上文所述，光电转换结构可以包括第二电极和光电二极管，所述形成光电转换结构的步骤可以包括：
形成光电二极管，该光电二极管的阴极层与所述第一电极相连；例如，可以依次形成N型非晶硅膜层、本征非晶硅膜层、P型非晶硅膜层，然后通过光刻构图工艺形成光电二极管。
在所述光电二级管的阳极层上方形成包括透明的第二电极的图形。
以上为对本发明实施例的提供的阵列基板及其制作方法的描述，可以看出，第一电极和光电转换结构之间设置有反射层，经过光电二极管的入射光线经过反射层的反射后会再次经过光电转换结构，从而提供光线的利用率。并且，通过还原性气体将第一电极中的金属单质析出形成反射层，因此不需要引入其他的材料来制作反射层，简化了制作工艺，同时，反射层还可以对薄膜晶体管进行遮挡，无需制作额外的遮光层来保护薄膜晶体管，降低了制作成本。
本发明至少一实施例提供一种X射线平板探测器，包括上述阵列基板和设置在所述阵列基板的光电转换结构上的X射线转换层60(如图1所示)。
X射线转换层60为包括闪烁体的膜层，所述闪烁体经过X射线曝光后能够将X射线光子转换为可见光，所述闪烁体可以为碘化铯。
当X射线照射所述X射线平板探测器时，X射线转化层可以将X射线转化为可见光，每个检测单元内的光电转换结构可以将所述可见光转换为电信号。阵列基板的驱动电路通过提供驱动信号逐行打开阵列基板上的薄膜晶体管，从而逐行检测阵列基板上的检测单元的信号。由于本发明实施例所提供的阵列基板可以提高光线的利用率，因此包括所述阵列基板的X射线平板 探测器的检测精度也相应提高。
本发明至少一实施例提供一种摄像系统，包括上述X射线平板探测器和显示装置。例如，该摄像系统还包括控制装置，如图3所示。例如，该摄像系统应用于医疗检查中，X射线平板探测器所检测的电信号可以传输至控制装置(如计算机)中，控制装置将电信号转换为图像信号，并控制显示装置进行显示相应的图像，从而直观地看出X射线的分布。由于本发明实施例中的X射线平板探测器的检测精度较高，因此所述摄像系统中所显示的图像更加清晰准确。
以上所述仅是本发明的示范性实施方式，而非用于限制本发明的保护范围，本发明的保护范围由所附的权利要求确定。
本申请要求于2015年3月3日递交的中国专利申请第201510095303.0号的优先权，在此全文引用上述中国专利申请公开的内容以作为本申请的一部分。

Claims (20)

  1. 一种阵列基板，所述阵列基板被划分为多个检测单元，每个所述检测单元内均设置有第一电极和光电转换结构，其中，所述第一电极设置在所述光电转换结构的入光侧的相反侧，且与所述光电转换结构电连接，其中，所述第一电极和所述光电转换结构之间还包括有导电的反射层，所述反射层朝向所述光电转换结构的表面为反射面。
  2. 根据权利要求1所述的阵列基板，其中，所述反射层为与所述第一电极电相连的导电膜层。
  3. 根据权利要求1所述的阵列基板，其中，所述反射层与所述第一电极形成为一体结构。
  4. 根据权利要求3所述的阵列基板，其中，所述第一电极的材料包括导电金属的氧化物，所述反射层由所述金属的单质形成。
  5. 根据权利要求4所述的阵列基板，其中，所述反射层由对所述第一电极的朝向所述发光转换结构的表面进行还原反应得到的所述金属的单质形成。
  6. 根据权利要求5所述的阵列基板，其中，所述金属氧化物为氧化铟锡，所述反射层由对所述氧化铟锡进行还原反应得到的锡单质形成。
  7. 根据权利要求1至6中任意一项所述的阵列基板，其中，每个所述检测单元中还包括一个薄膜晶体管，所述薄膜晶体管与所述第一电极之间设置有绝缘层，所述绝缘层上与所述薄膜晶体管的源极相对应的位置设置有过孔，所述第一电极通过所述过孔与所述薄膜晶体管的源极相连。
  8. 根据权利要求1至7中任意一项所述的阵列基板，其中，所述光电转换结构包括光电二极管和第二电极，所述光电二极管的阴极层与所述第一电极相连，所述光电二极管的阳极层与所述第二电极相连。
  9. 一种阵列基板的制作方法，包括：
    将阵列基板划分为多个检测单元；
    在每个所述检测单元内形成包括第一电极的图形；
    在所述第一电极的图形上形成导电的反射层的图形；
    在所述导电的反射层的图形上形成光电转换结构，
    其中，所述反射层的朝向所述光电转换结构的表面为反射面。
  10. 根据权利要求9所述的制作方法，其中，形成导电的反射层的图形的步骤包括：
    在所述第一电极上形成导电膜层。
  11. 根据权利要求9或10所述的制作方法，其中，所述反射层与所述第一电极形成为一体结构。
  12. 根据权利要求11所述的制作方法，其中，所述第一电极的材料包括导电的金属氧化物，形成导电的反射层的步骤包括：
    向反应腔室通入还原性气体，以使得所述金属氧化物中的部分金属单质析出。
  13. 根据权利要求12所述的制作方法，其中，所述金属氧化物为氧化铟锡。
  14. 根据权利要求13所述的制作方法，其中，所述还原性气体为氢气。
  15. 根据权利要求14所述的制作方法，其中，所述氢气的气体流量为：20～500sccm，通入时间为：10～200s，反应腔室的气压为：100～300mT，反应腔室的用于形成等离子体的电极功率为：400～800W。
  16. 根据权利要求9至15中任意一项所述的制作方法，其中，在每个所述检测单元内形成包括第一电极的图形的步骤之前还包括：在每个所述检测单元内形成薄膜晶体管；
    在所述薄膜晶体管上方形成绝缘层；
    在所述绝缘层上对应于薄膜晶体管的源极的位置形成过孔，以使得第一电极与所述薄膜晶体管的源极相连。
  17. 根据权利要求9至15中任意一项所述的制作方法，其中，所述形成光电转换结构的步骤包括：
    形成光电二极管，该光电二极管的阴极层与所述第一电极相连；
    在所述光电二极管的阳极层上方形成包括透明的第二电极的图形。
  18. 一种X射线平板探测器，包括权利要求1至8中任意一项所述的阵列基板和设置在所述阵列基板的光电转换结构上的X射线转换层。
  19. 一种摄像系统，包括权利要求18所述的X射线平板探测器和显示装置。
  20. 根据权利要求19所述的摄像系统，还包括控制装置，所述控制装置被构造为将所述X射线平板探测器检测的电信号转换为图像信号，并控制显示装置显示对应于所述图像信号的图像。
PCT/CN2015/084549 2015-03-03 2015-07-21 阵列基板及其制作方法、x射线平板探测器、摄像系统 Ceased WO2016138725A1 (zh)

Priority Applications (4)

Application Number Priority Date Filing Date Title
KR1020167031386A KR101921402B1 (ko) 2015-03-03 2015-07-21 어레이 기판 및 그 제조 방법, x-선 평판 검출기 및 카메라 시스템
US14/913,174 US9735195B2 (en) 2015-03-03 2015-07-21 Array substrate and method for manufacturing the same, x-ray flat panel detector, image pickup system
JP2016570288A JP6588473B2 (ja) 2015-03-03 2015-07-21 アレイ基板及びその作成方法と、ｘ線フラットパネルディテクターと、撮像システム
EP15832862.5A EP3267483B1 (en) 2015-03-03 2015-07-21 Array substrate and manufacturing method thereof, x-ray flat panel detector and camera system

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
CN201510095303.0A CN104637970B (zh) 2015-03-03 2015-03-03 阵列基板及其制作方法、x射线平板探测器、摄像系统
CN201510095303.0 2015-03-03

Publications (1)

Publication Number Publication Date
WO2016138725A1 true WO2016138725A1 (zh) 2016-09-09

Family

ID=53216505

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/CN2015/084549 Ceased WO2016138725A1 (zh) 2015-03-03 2015-07-21 阵列基板及其制作方法、x射线平板探测器、摄像系统

Country Status (6)

Country Link
US (1) US9735195B2 (zh)
EP (1) EP3267483B1 (zh)
JP (1) JP6588473B2 (zh)
KR (1) KR101921402B1 (zh)
CN (1) CN104637970B (zh)
WO (1) WO2016138725A1 (zh)

Families Citing this family (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN104637970B (zh) 2015-03-03 2018-03-06 京东方科技集团股份有限公司 阵列基板及其制作方法、x射线平板探测器、摄像系统
CN104979367B (zh) * 2015-06-17 2019-01-25 京东方科技集团股份有限公司 探测器背板及其制作方法、x射线平板探测器、摄像系统
CN105140250A (zh) * 2015-06-30 2015-12-09 京东方科技集团股份有限公司 光电转换阵列基板及其制作方法、光电转换装置
CN105093259B (zh) 2015-08-14 2018-12-18 京东方科技集团股份有限公司 射线探测器
CN105677092B (zh) 2016-01-04 2019-05-10 京东方科技集团股份有限公司 面板及其制作方法和显示装置
CN106653789A (zh) 2017-01-04 2017-05-10 京东方科技集团股份有限公司 X射线探测器及其制造方法
CN106847986A (zh) * 2017-02-23 2017-06-13 京东方科技集团股份有限公司 X射线平板探测器及其制备方法
CN107170761B (zh) * 2017-06-12 2020-03-24 京东方科技集团股份有限公司 一种阵列基板及其制作方法、显示面板、显示装置
KR102583562B1 (ko) * 2017-12-27 2023-09-26 엘지디스플레이 주식회사 디지털 엑스레이 검출기용 어레이 기판과 이를 포함하는 엑스레이 검출기
CN109411500B (zh) 2018-10-31 2021-01-22 京东方科技集团股份有限公司 探测面板及其制作方法
EP4047655B1 (en) 2019-10-14 2025-04-16 BOE Technology Group Co., Ltd. Detection substrate and manufacturing method therefor, and flat panel detector
US12075664B2 (en) * 2019-11-04 2024-08-27 Boe Technology Group Co., Ltd. Display substrate comprising silicon organic glass layer, display apparatus, and method of fabricating display substrate
CN110970481B (zh) * 2019-12-18 2023-11-24 京东方科技集团股份有限公司 显示基板及其制备方法、显示装置
CN115516410A (zh) * 2020-03-20 2022-12-23 京东方科技集团股份有限公司 显示面板和显示装置
CN115360206A (zh) * 2022-08-19 2022-11-18 Nano科技(北京)有限公司 一种背照射光电探测器阵列结构、制备方法及其封装结构
CN118398639B (zh) * 2024-06-25 2024-10-15 松山湖材料实验室 光电探测成像阵列、成像芯片以及成像设备

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007140016A (ja) * 2005-11-17 2007-06-07 Seiko Epson Corp 液晶装置、液晶装置の製造方法、液晶装置用基板、プロジェクタ
US20100085299A1 (en) * 2008-10-08 2010-04-08 Seon-Tae Yoon Electrto-optic display
CN104637970A (zh) * 2015-03-03 2015-05-20 京东方科技集团股份有限公司 阵列基板及其制作方法、x射线平板探测器、摄像系统

Family Cites Families (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3300589A1 (de) * 1983-01-11 1984-07-12 Schott Glaswerke, 6500 Mainz Verfahren zur herstellung von indiumoxid-zinnoxid-schichten
JPH029176A (ja) * 1988-06-27 1990-01-12 Matsushita Electric Works Ltd 光電変換装置および半導体装置
JPH065897A (ja) * 1992-06-23 1994-01-14 Sanyo Electric Co Ltd 集積型光起電力装置
JP4921180B2 (ja) * 2006-01-25 2012-04-25 キヤノン株式会社 放射線検出装置及び放射線撮像システム
EP3002794B1 (en) * 2006-07-03 2020-08-19 Hamamatsu Photonics K.K. Photodiode array
US7923800B2 (en) * 2006-12-27 2011-04-12 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and electronic device
JP4924224B2 (ja) 2007-06-13 2012-04-25 セイコーエプソン株式会社 光検出器内蔵表示装置及び電子機器
US20100282297A1 (en) * 2007-10-30 2010-11-11 Sanyo Electric Co., Ltd. Solar cell
JP4889623B2 (ja) * 2007-12-26 2012-03-07 三洋電機株式会社 透明導電膜及び透明導電膜を用いた太陽電池
JP2010114186A (ja) * 2008-11-05 2010-05-20 Seiko Epson Corp 光電変換装置、光電変換装置の製造方法、及び電子機器
JP2010206128A (ja) * 2009-03-06 2010-09-16 Seiko Epson Corp 光電変換素子、光電変換装置、及びイメージセンサ
JP2011023444A (ja) * 2009-07-14 2011-02-03 Seiko Epson Corp 光電変換装置の製造方法
JP2011086726A (ja) * 2009-10-14 2011-04-28 Fujifilm Corp 薄膜トランジスタ基板並びにそれを備えた有機電界発光表示装置及びｘ線撮像装置
KR101286552B1 (ko) * 2010-04-26 2013-07-16 엘지디스플레이 주식회사 반사전극 및 광전소자
JP5475574B2 (ja) 2010-07-02 2014-04-16 富士フイルム株式会社 放射線検出素子、及び放射線画像撮影装置
JP2013051083A (ja) * 2011-08-30 2013-03-14 Panasonic Liquid Crystal Display Co Ltd 透明導電膜の製造方法、反射膜の製造方法、液晶表示装置の製造方法、液晶表示装置、イメージセンサの製造方法、タッチパネルの製造方法、及び太陽電池の製造方法
KR20140067559A (ko) * 2012-11-27 2014-06-05 엘지디스플레이 주식회사 디지털 엑스레이 검출기용 박막트랜지스터 어레이 기판
CN103985717A (zh) * 2014-05-13 2014-08-13 京东方科技集团股份有限公司 一种阵列基板及其制备方法、显示装置
US9490282B2 (en) * 2015-03-19 2016-11-08 Omnivision Technologies, Inc. Photosensitive capacitor pixel for image sensor

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007140016A (ja) * 2005-11-17 2007-06-07 Seiko Epson Corp 液晶装置、液晶装置の製造方法、液晶装置用基板、プロジェクタ
US20100085299A1 (en) * 2008-10-08 2010-04-08 Seon-Tae Yoon Electrto-optic display
CN104637970A (zh) * 2015-03-03 2015-05-20 京东方科技集团股份有限公司 阵列基板及其制作方法、x射线平板探测器、摄像系统

Also Published As

Publication number Publication date
KR101921402B1 (ko) 2018-11-23
CN104637970A (zh) 2015-05-20
JP2018513346A (ja) 2018-05-24
EP3267483B1 (en) 2021-12-22
CN104637970B (zh) 2018-03-06
KR20160143800A (ko) 2016-12-14
US9735195B2 (en) 2017-08-15
US20160380022A1 (en) 2016-12-29
EP3267483A1 (en) 2018-01-10
JP6588473B2 (ja) 2019-10-09
EP3267483A4 (en) 2018-11-07

Similar Documents

Publication Publication Date Title
WO2016138725A1 (zh) 阵列基板及其制作方法、x射线平板探测器、摄像系统
CN101325207B (zh) 用于x射线探测器的薄膜晶体管阵列衬底和x射线探测器
US9158003B2 (en) Multi-energy radiation detectors and methods of manufacturing the same
CN102141630B (zh) 放射线检测器
US10141357B2 (en) Photosensor substrate
TWI700828B (zh) Ｘ光檢測器
US20100054418A1 (en) X-ray detecting element
US8288732B2 (en) Image signal readout method and apparatus, and image signal readout system
US20160240581A1 (en) Electromagnetic wave detecting element
US20130048861A1 (en) Radiation detector, radiation detector fabrication method, and radiographic image capture device
US20100051820A1 (en) X-ray detecting element
CN102628953A (zh) 辐射检测器及其制造方法以及包括其的x射线成像系统
CN105742386B (zh) 光电二极管及其制作方法、x射线探测基板及其制作方法
CN111202536A (zh) 射线探测器及其制造方法、电子设备
CN105118840B (zh) 非可见光平板检测器及其制备方法、影像设备
US20130048862A1 (en) Radiation detector, radiation detector fabrication method, and radiographic image capture device
WO2014069818A1 (ko) 엑스레이 검출기 및 엑스레이 검출 시스템
JP2000058808A (ja) 二次元画像検出器
KR102536859B1 (ko) 광 검출 장치 및 그의 제조 방법
CN109166943B (zh) 探测基板及其制造方法、探测器
JP2011176274A (ja) 放射線検出素子
JP2014122903A (ja) 放射線検出器および放射線画像撮影装置
CN104979367B (zh) 探测器背板及其制作方法、x射线平板探测器、摄像系统
JP2010003849A (ja) 電磁波検出素子
KR20180036341A (ko) 수소침투가 방지된 디지털 엑스레이 검출장치

Legal Events

Date Code Title Description
WWE Wipo information: entry into national phase

Ref document number: 14913174

Country of ref document: US

WWE Wipo information: entry into national phase

Ref document number: 2015832862

Country of ref document: EP

121 Ep: the epo has been informed by wipo that ep was designated in this application

Ref document number: 15832862

Country of ref document: EP

Kind code of ref document: A1

ENP Entry into the national phase

Ref document number: 20167031386

Country of ref document: KR

Kind code of ref document: A

ENP Entry into the national phase

Ref document number: 2016570288

Country of ref document: JP

Kind code of ref document: A

NENP Non-entry into the national phase

Ref country code: DE