WO2016165608A1 - 一种硅基调制器及其制备方法 - Google Patents

一种硅基调制器及其制备方法 Download PDF

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WO2016165608A1
WO2016165608A1 PCT/CN2016/079060 CN2016079060W WO2016165608A1 WO 2016165608 A1 WO2016165608 A1 WO 2016165608A1 CN 2016079060 W CN2016079060 W CN 2016079060W WO 2016165608 A1 WO2016165608 A1 WO 2016165608A1
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region
type
type doped
doped region
doped
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French (fr)
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华锋
王会涛
许�鹏
吴东平
付超超
王言
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ZTE Corp
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ZTE Corp
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    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/015—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on semiconductor elements having potential barriers, e.g. having a PN or PIN junction
    • G02F1/025—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on semiconductor elements having potential barriers, e.g. having a PN or PIN junction in an optical waveguide structure
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/21—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  by interference
    • G02F1/225—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  by interference in an optical waveguide structure
    • G02F1/2257—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  by interference in an optical waveguide structure the optical waveguides being made of semiconducting material
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass

Definitions

  • This paper relates to the field of silicon-based optoelectronic technology, and in particular to a silicon-based modulator and a method for preparing the same.
  • the optical modulator is initially used in the modulation mode of the light source. Due to the limitation of bandwidth, it gradually evolves into an external modulation mode.
  • the commercial external modulator structure is a Mach-Zehnder interferometer (MZI) structure.
  • MZI Mach-Zehnder interferometer
  • a silicon-based MZI structure photoelectric modulator has emerged.
  • the silicon-based MZI structure it is divided into three types: accumulation type, injection type and depletion type. Since the depletion mode has the shortest response time and the largest bandwidth, the depletion MZI modulator is the most commonly used modulator structure. .
  • the structure of a common depletion MZI modulator is a simple vertical single PN junction structure, as shown in FIG. 1, the structure includes: first and second two heavily doped contact regions and a first type of modulation arm a doped region and a second doped region.
  • the heavily doped contact regions are located on the left and right sides of the modulation arm, and the middle is the modulation arm working region.
  • the first type doped region and the second type doped region of the modulation arm are longitudinally symmetrically distributed, and the PN junction is located in the first type doped region and
  • the contact region of the second type doping region is short in the length of the PN junction of the structure, and the range of action is small, so the modulation efficiency is low, and a long device length is required to effectively realize modulation, which is disadvantageous for device integration.
  • the embodiment of the invention provides a silicon-based modulator and a preparation method thereof.
  • Embodiments of the present invention provide a silicon-based modulator including: a first heavily doped contact region and a second heavily doped contact region, and a first type doped region and a second type doped a modulation arm working area composed of the hetero regions, wherein the first heavily doped contact region and the second heavily doped contact region are respectively located in the modulation
  • the first heavily doped contact region is connected to the first type doped region, and the contact region of the first doped region and the second doped region forms a PN junction
  • the area of the contact region formed between the first type doped region and the second type doped region in the working region of the modulation arm is larger than the minimum contact region between the first type doped region and the second type doped region area.
  • the first heavily doped contact region, the first doped region, the second doped region, and the second heavily doped contact region are respectively p+, p, n, n+ regions, or respectively It is the n+, n, p, p+ region.
  • the second type doped region in the modulation arm working region half surrounds the first type doped region, and the first type doped region and the second type doped region of the modulation arm working region
  • the intersection line between the PN junction and the first plane exhibits a J-like curve
  • the first plane is a longitudinal section of the silicon-based modulator.
  • the strip shape The first type doping region is alternately and continuously distributed with the strip-shaped second type doping region, and all of the strip-shaped first-type doping regions are mutually penetrated, and all of the strip-shaped second-type doping regions Intersecting with each other, and the intersection line of the PN junction between the first type doped region and the second type doped region of the modulation arm working region and the first plane appears as a polygonal wave-like polygonal line;
  • the first plane is a longitudinal section of the silicon-based modulator.
  • strip-shaped first type doping region and the strip-shaped second type doping region are both the first heavily doped contact region or the second heavily doped contact region and the modulation arm working region
  • the contact surfaces are parallel.
  • a second type of doped region in the working region of the modulation arm is lattice-distributed in the first type doped region;
  • the intersection line between the PN junction and the first plane between the first type doped region and the second type doped region has a fold line similar to a rectangular wave, and some appear like an L-shaped fold line, and the first type
  • the doped regions are integrally connected through, and the second doped regions are integrally connected through;
  • the first plane is a longitudinal section of the silicon-based modulator; the first plane corresponding to an intersection line of a rectangular-shaped broken line is corresponding to the intersection line presenting a similar L-shaped line
  • the first plane is two different planes.
  • the embodiment of the invention further provides a method for preparing a silicon-based modulator, comprising: forming a first type doped substrate, and preparing the first type doped substrate into an optical waveguide by using an etching process;
  • the pattern of the second type doped region on the horizontal plane is set by an etching process, and then the second type ion of the set concentration is implanted by an ion implantation method, and annealed to form a second type doped region to obtain a modulation arm working region;
  • the area of the contact region formed between the first type doped region and the second type doped region in the working region of the modulation arm is larger than the minimum contact region between the first type doped region and the second type doped region Area.
  • the forming a second type doping region by using an ion implantation method to obtain a modulation arm working region includes:
  • the set angle range is: 15-75 degrees from the vertical direction and parallel to the horizontal line between the first heavily doped contact region and the second heavily doped contact region.
  • the forming a second type doping region by using an etching process and an ion implantation method to obtain a modulation arm working region includes:
  • Annealing activates the implanted second type ions to form a second type doped region of a set ion concentration to obtain a modulated arm working region;
  • the set angle range is: 15-75 degrees from the vertical direction and parallel to the horizontal line between the first heavily doped contact region and the second heavily doped contact region.
  • the forming a second type doping region by using an etching process and an ion implantation method to obtain a modulation arm working region includes:
  • Annealing activates the implanted second type ions to form a second type doped region of a set ion concentration to obtain a modulated arm working region;
  • the set angle range is: 15-75 degrees from the vertical direction and parallel to the horizontal line between the first heavily doped contact region and the second heavily doped contact region.
  • the silicon-based modulator includes: a first heavily doped contact region and a second heavily doped contact region, and a first type doped region and a second a modulation arm working region composed of a doped region, the first heavily doped contact region and the second heavily doped contact region are respectively located at left and right sides of the working region of the modulation arm, and the first heavily doped contact region Connected to the first type doped region, the contact regions of the first type doped region and the second type doped region form a PN junction, the first type doped region and the second in the modulation arm working region The area of the contact region formed between the doped regions is greater than the area of the smallest contact region between the first doped region and the second doped region.
  • the PN junction range of the silicon-based modulator is increased compared with the PN junction of the conventional silicon-based modulator, and the adjustment efficiency is greatly improved, which is advantageous for device integration.
  • the silicon-based modulator preparation method of the embodiment of the invention is stable and reliable, and has high repeatability.
  • Figure 1 (a) is a top plan view of a conventional depletion MZI modulator (longitudinal single PN junction);
  • FIG. 1(b) is a cross-sectional structural view of a conventional depletion MZI modulator (longitudinal single PN junction) taken along line A1-A2 of FIG. 1(a);
  • FIG. 2(a) is a top plan view showing a structure of a silicon-based modulator according to an embodiment of the invention
  • FIG. 2(b) is a cross-sectional structural view of the silicon-based modulator of FIG. 2(a) taken along line A1-A2;
  • 3(a) is a top plan view showing a silicon-based modulator according to another embodiment of the present invention.
  • FIG. 3(b) is a cross-sectional structural view of the silicon-based modulator of FIG. 3(a) taken along line A1-A2;
  • FIG. 4(a) is a top plan view showing a silicon-based modulator according to another embodiment of the present invention.
  • FIG. 4(b) is a cross-sectional structural view of the silicon-based modulator of FIG. 4(a) taken along line A1-A2;
  • FIG. 4(c) is a cross-sectional structural view of the silicon-based modulator of FIG. 4(a) taken along line B1-B2;
  • FIG. 8 are cross-sectional views showing corresponding intermediate structures in a conventional silicon-based modulator preparation process
  • Figure 9 is a cross-sectional view showing the structure of the silicon-based modulator of the fourth embodiment.
  • Figure 10 is a cross-sectional view showing the structure of the first ion implantation of the silicon-based modulator according to the fifth embodiment
  • Figure 11 is a cross-sectional view showing the structure of the second ion implantation of the silicon-based modulator according to the fifth embodiment
  • Figure 12 is a cross-sectional view showing the structure of the first ion implantation of the silicon-based modulator of the sixth embodiment
  • Figure 13 is a cross-sectional view showing the structure of the second ion implantation of the silicon-based modulator of the sixth embodiment.
  • Embodiments of the present invention provide a silicon-based modulator comprising: a first heavily doped contact region and a second heavily doped contact region, and doped by the first type doped region and the second type a modulation arm working area composed of a hetero region, wherein the first heavily doped contact region and the second heavily doped contact region are respectively located at left and right sides of the working area of the modulation arm, and the first heavily doped contact region and the The first type of doped regions are connected, a contact region of the first type doped region and the second type doped region forms a PN junction, and a contact region formed between the first type doped region and the second type doped region in the modulation arm working region The area is larger than the area of the smallest contact area between the first type doped region and the second type doped region.
  • the minimum contact area between the first type doped region and the second type doped region may be: a first type doped region and a second type doping vertically distributed symmetrically as shown in FIG. The area of contact between the zones.
  • the first heavily doped contact region, the first doped region, the second doped region, and the second heavily doped contact region are respectively p+, p, n, n+ regions, or respectively It is the n+, n, p, p+ region.
  • the second type doping region in the modulation arm working region half surrounds the first type doping region, and the first type doping region and the second type doping of the modulation arm working region
  • the intersection line between the PN junction and the first plane between the regions exhibits a J-like curve
  • the first plane is a longitudinal section of the silicon-based modulator.
  • the silicon-based modulator when the silicon-based modulator is viewed from above, a plurality of strip-shaped first-type doped regions and a plurality of strip-shaped second-type doped regions are present in the working region of the modulation arm, the strips The first doped region of the shape is alternately and continuously distributed with the strip-shaped second doped region, and the first doping regions of all the strips are mutually penetrated, and all of the strips are doped with a second type
  • the sections intersect each other, and the intersection line of the PN junction between the first type doped region and the second type doped region of the modulation arm working region and the first plane appears as a polygonal line-like polygonal line;
  • the first plane is a longitudinal section of the silicon-based modulator.
  • strip-shaped first type doping region and the strip-shaped second type doping region are both operable with the first heavily doped contact region or the second heavily doped contact region and the modulation arm
  • the contact faces between the zones are parallel.
  • a second type of doped region in the working region of the modulation arm is lattice-distributed in the first type doped region; the modulation arm working region
  • the intersection line between the PN junction and the first plane between the first type doped region and the second type doped region has a fold line similar to a rectangular wave, and some appear like an L-shaped fold line, and the first The doped regions are integrally connected through, and the second doped regions are integrally connected through;
  • first plane is a longitudinal section of the silicon-based modulator; the representation is a similar moment
  • the first plane corresponding to the intersection line of the wavy line and the first plane corresponding to the intersection line appearing like an L-shaped line are two different planes.
  • the PN junction range of the silicon-based modulator is increased compared with the PN junction of the conventional silicon-based modulator, and the adjustment efficiency is greatly improved, which is advantageous for device integration.
  • the silicon-based modulator includes: a first heavily doped contact region and a second heavily doped contact region, and a modulation arm working area composed of a first type doped region and a second type doped region, wherein the first heavily doped contact region and the second heavily doped contact region are respectively located on left and right sides of the working area of the modulation arm,
  • the first heavily doped contact region is connected to the first type doped region, and the contact regions of the first doped region and the second doped region form a PN junction; wherein the modulation arm working region
  • the second type doping region half surrounds the first type doping region, and the PN junction between the first type doping region and the second type doping region of the modulation arm working region intersects with the first plane
  • the line presents a curve similar to the J shape;
  • the first plane is formed by cutting along the line A1-A2 when the silicon-based modulator is viewed from above.
  • the first heavily doped contact region, the first doped region, the second doped region, and the second heavily doped contact region are respectively p+, p, n, n+ regions, or n+, n respectively. , p, p+ area.
  • the silicon-based modulator includes: a first heavily doped contact region and a second heavily doped contact region, and a modulation arm working area composed of a first type doped region and a second type doped region, wherein the first heavily doped contact region and the second heavily doped contact region are respectively located at left and right sides of the modulation arm working region
  • the first heavily doped contact region is connected to the first type doped region, and the contact regions of the first doped region and the second doped region form a PN junction; wherein, the silicon tone is viewed from above a plurality of strip-shaped first-type doped regions and a plurality of strip-shaped second-type doped regions in the working region of the modulation arm, the strip-shaped first-type doped regions and the The strip-shaped second-type doping regions are alternately continuously distributed, and all of the strip-shaped first-type doping regions are mutually penetrated, and all of the
  • the first plane is formed by cutting along the line A1-A2 when the silicon-based modulator is viewed from above; the first of the strips
  • the doped region and the strip-shaped second doped region are both parallel to the contact surface between the first heavily doped contact region or the second heavily doped contact region and the modulation arm working region.
  • the silicon-based modulator includes: a first heavily doped contact region and a second heavily doped contact region, and a modulation arm working area composed of a first type doped region and a second type doped region, wherein the first heavily doped contact region and the second heavily doped contact region are respectively located at left and right sides of the modulation arm working region
  • the first heavily doped contact region is connected to the first type doped region, and the contact regions of the first doped region and the second doped region form a PN junction; wherein, the silicon tone is viewed from above a second type doped region in the working region of the modulation arm is distributed in the first type doped region; the first type doped region and the second type of the modulation arm working region are
  • the intersecting lines of the PN junctions between the doped regions and the first plane appear as fold lines resembling rectangular waves, and some appear to be similar to L-shaped fold lines, and the
  • the first plane is a longitudinal section of the silicon-based modulator; the said intersection is similar to a rectangular-shaped line of intersections
  • the first plane corresponding to the intersection line appearing like an L-shaped line is two different planes, and the intersection line appearing like a rectangular-shaped broken line is formed along the line A1-A2.
  • the cross-section of the intersecting line which is similar to the L-shaped line, is located on a section formed along the line B1-B2.
  • FIG. 1 a method for preparing a conventional silicon-based modulator shown in FIG. 1, which includes the following:
  • Step 1 provide a first type (n or p type) doped SOI substrate, directly using the doping concentration a substrate between 1E17cm-3 - 1E19cm-3, or using an ion implantation method to adjust the doping concentration to within this range, as shown in FIG. 5;
  • Step 2 preparing the optical waveguide by using a photolithography etching process, that is, the structure shown in FIG. 6 is obtained;
  • Step 3 Using a photolithography etching process to set the contact regions on both sides of the optical waveguide, and then injecting corresponding ions by ion implantation, respectively, to achieve a heavily doped region having a concentration of 1E19 cm-3 to 1 E21 cm-3, as shown in FIG. ;
  • Step 4 setting a second type (p or n type) ion doping region by using a photolithography etching process
  • Step 5 vertically implanting the second type ions, annealing and activating the implanted ions, and the second doping concentration after annealing ranges from 1E17 cm to 3E19 cm-3, and the structure is as shown in FIG.
  • an embodiment of the present invention further provides a method for preparing a silicon-based modulator, including:
  • the method also includes:
  • the pattern of the second type doped region on the horizontal plane is set by an etching process, and then the second type ion of the set concentration is implanted by an ion implantation method, and annealed to form a second type doped region to obtain a modulation arm working region;
  • the area of the contact region formed between the first type doped region and the second type doped region in the working region of the modulation arm is larger than the minimum contact region between the first type doped region and the second type doped region Area.
  • the first type doping region and the second type doping region form a P region and an N region in the PN junction by doping.
  • the first type doped region substrate can be formed by an ion diffusion process or an ion implantation process.
  • the remaining first doped region substrate portion is the first doped region.
  • the forming a second type doping region by using an ion implantation method to obtain a modulation arm working region includes:
  • the set angle range is: 15-75 degrees from the vertical direction and parallel to the horizontal line between the first heavily doped contact region and the second heavily doped contact region.
  • the forming a second type doping region by using an etching process and an ion implantation method to obtain a modulation arm working region includes:
  • Annealing activates the implanted second type ions to form a second type doped region of a set ion concentration to obtain a modulated arm working region;
  • the set angle range is: 15-75 degrees from the vertical direction and parallel to the horizontal line between the first heavily doped contact region and the second heavily doped contact region.
  • the forming a second type doping region by using an etching process and an ion implantation method to obtain a modulation arm working region includes:
  • Annealing activates the implanted second type ions to form a second type doped region of set ion concentration, Obtaining a working area of the modulation arm;
  • the set angle range is: 15-75 degrees from the vertical direction and parallel to the horizontal line between the first heavily doped contact region and the second heavily doped contact region.
  • the structure of the silicon-based modulator of this embodiment is as shown in FIG. 2, and the preparation method thereof is as follows:
  • step one to step three are identical to those of the conventional silicon-based modulator described above and will not be described in detail herein.
  • Step 4 Adjust the angle of ion implantation (15-75 degrees from the vertical direction and parallel to the A1-A2 line shown in Figure 2), and inject the second type ions one or more times (by adjusting the injection angle or increasing
  • the doping concentration of the type II ions ranges from 1E17 cm to 3E19 cm-3, as shown in FIG.
  • the PN junction of the modulator of the embodiment has a larger range of effects (length and area are increased), and it can be found by using COMSOL finite element software simulation that when the doping concentration is 1E18 cm-3, the figure 2
  • the MZI modulator of the dotted line PN junction structure has twice the modulation efficiency of a conventional vertical single PN junction modulator;
  • the second type doping region of the MZI modulator is realized by adjusting the angle of ion implantation, and the second type doping region of the conventional vertical single PN junction modulator is set by the photolithography step.
  • the angle of adjusting the ion implantation is higher than the reliability, stability and consistency of the photolithography step, so the overall repeatability reliability of the preparation of the polygonal line PN junction structure MZI modulator is higher.
  • the structure of the silicon-based modulator of this embodiment is as shown in FIG. 3, and the preparation method thereof is as follows:
  • step one to step three are identical to those of the conventional silicon-based modulator described above and will not be described in detail herein.
  • Step 4 setting a pattern of the strip-shaped second type doped region on the horizontal surface by using a photolithography technique
  • Step 5 the first type II ion implantation: vertical longitudinal injection, to obtain the single-junction or multi-junction strip-shaped injection structure shown in FIG. 10, and then removing the photoresist on the first-type doped region;
  • Step 6 Second Type II Ion Implantation: Adjust the angle of ion implantation (15-75 degrees from the vertical direction and parallel to the A1-A2 line shown in Figure 3), single or multiple injections of the second type Ions, through a plurality of strip structures, as described above, adjust the energy and dose of ion implantation to control the depth and concentration of the PN junction, the implantation depth is as close as possible to the surface position of the working area of the modulation arm;
  • the type ion, the second doping concentration range after annealing is 1E17cm-3-1E19cm-3, and the structure shown in Fig. 11 is obtained, and the position of the PN junction in the optical waveguide is adjusted to achieve the largest modulation efficiency.
  • the strip PN junction structure MZI modulator has a larger PN junction range. It can be found by COMSOL finite element software simulation that when the doping concentration is 3E18cm-3, the modulation efficiency of the strip PN junction structure MZI modulator is Three times the traditional vertical single PN junction modulator;
  • the structure of the silicon-based modulator of this embodiment is as shown in FIG. 4, and the preparation method thereof is as follows:
  • step one to step three are identical to those of the conventional silicon-based modulator described above and will not be described in detail herein.
  • Step 4 using a photolithography technique to set a pattern of the dot-shaped second type doped region on a horizontal plane;
  • Step 5 The first type II ion implantation: vertical longitudinal injection to realize a multi-column injection structure, and then removing the photoresist on the first type doped region, thereby obtaining the structure shown in FIG. 12 (which is silicon) A cross-sectional view of the base modulator along the line A1-A2 in FIG. 4);
  • Step 6 Second type II ion implantation: adjust the angle of ion implantation (15-75 degrees from the vertical direction and parallel to the A1-A2 line shown in Figure 3), single or multiple injections, more The columnar structure is pierced, the energy and dose of the ion implantation are adjusted to control the depth and concentration of the PN junction, and the implantation depth is as close as possible to the surface position of the working area of the modulation arm; annealing activates the injected second type ion, and the second doped after annealing
  • the impurity concentration range is 1E17cm-3-1E19cm-3, and the structure shown in Fig. 13 is obtained, and the position of the PN junction in the optical waveguide is adjusted to achieve the largest modulation efficiency.
  • the lattice PN junction structure MZI modulator has a larger PN junction range, which can effectively improve the modulation efficiency of the modulator;
  • embodiments of the present invention can be provided as a method, system, or computer program product. Accordingly, the present invention can take the form of a hardware embodiment, a software embodiment, or a combination of software and hardware. Moreover, the invention can take the form of a computer program product embodied on one or more computer-usable storage media (including but not limited to disk storage and optical storage, etc.) including computer usable program code.
  • the computer program instructions can also be stored in a computer readable memory that can direct a computer or other programmable data processing device to operate in a particular manner, such that the instructions stored in the computer readable memory produce an article of manufacture comprising the instruction device.
  • the apparatus implements the functions specified in one or more blocks of a flow or a flow and/or block diagram of the flowchart.
  • These computer program instructions can also be loaded onto a computer or other programmable data processing device such that a series of operational steps are performed on a computer or other programmable device to produce computer-implemented processing for execution on a computer or other programmable device.
  • the instructions provide steps for implementing the functions specified in one or more of the flow or in a block or blocks of a flow diagram.
  • the silicon-based modulator includes: a first heavily doped contact region and a second heavily doped contact region, and a first type doped region and a second a modulation arm working region composed of a doped region, the first heavily doped contact region and the second heavily doped contact region are respectively located at left and right sides of the working region of the modulation arm, and the first heavily doped contact region Connected to the first type doped region, the contact regions of the first type doped region and the second type doped region form a PN junction, the first type doped region and the second in the modulation arm working region The area of the contact region formed between the doped regions is greater than the area of the smallest contact region between the first doped region and the second doped region.
  • the PN junction range of the silicon-based modulator is increased compared with the PN junction of the conventional silicon-based modulator, and the adjustment efficiency is greatly improved, which is advantageous for device integration.
  • the silicon-based modulator preparation method of the embodiment of the invention is stable and reliable, and has high repeatability. Therefore, the present invention has strong industrial applicability.

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  • Nonlinear Science (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Optical Modulation, Optical Deflection, Nonlinear Optics, Optical Demodulation, Optical Logic Elements (AREA)

Abstract

一种硅基调制器及制备所述硅基调制器的方法，所述硅基调制器包括：第一重掺杂接触区和第二重掺杂接触区，以及由第一型掺杂区和第二型掺杂区组成的调制臂工作区，所述第一重掺杂接触区和第二重掺杂接触区分别位于所述调制臂工作区的左右两侧，所述第一重掺杂接触区与所述第一型掺杂区相连，所述第一型掺杂区和第二型掺杂区的接触区域形成PN结，所述调制臂工作区中的第一型掺杂区和第二型掺杂区之间形成的接触区域的面积大于第一型掺杂区和第二型掺杂区之间最小接触区域的面积。

Description

一种硅基调制器及其制备方法 技术领域
本文涉及硅基光电子技术领域，尤其涉及一种硅基调制器及其制备方法。
背景技术
光调制器作为硅基光电子系统中的关键器件，最开始使用的是光源内调制方式，由于受到带宽的限制，渐渐演变为外调制方式。目前，商用的外调制器结构为马赫-曾德尔干涉仪(Mach-Zehnder interferometer，MZI)结构，为了和硅基集成电路有效的集成，硅基MZI结构光电调制器应运而生。对于硅基MZI结构，又分为积累型、注入型和耗尽型三种方式，由于耗尽型方式的响应时间最短，带宽最大，所以耗尽型MZI调制器是目前最常用的调制器结构。
目前，常见的耗尽型MZI调制器的结构是简单的纵向单个PN结结构，如图1所示，该结构包括：第一、第二两个重掺杂接触区和调制臂的第一型掺杂区和第二型掺杂区。重掺杂接触区位于调制臂的左右两侧，中间为调制臂工作区，调制臂中第一型掺杂区和第二型掺杂区纵向对称分布，PN结位于第一型掺杂区和第二型掺杂区的接触区域，由于该结构的PN结的长度短，作用范围小，所以调制效率低，需要很长的器件长度才能有效的实现调制，不利于器件的集成。
发明内容
为解决相关技术存在的调制效率低的技术问题，本发明实施例提供一种硅基调制器及其制备方法。
为了解决上述技术问题，采用如下技术方案：
本发明实施例提供了一种硅基调制器，所述硅基调制器包括：第一重掺杂接触区和第二重掺杂接触区，以及由第一型掺杂区和第二型掺杂区组成的调制臂工作区，所述第一重掺杂接触区和第二重掺杂接触区分别位于所述调 制臂工作区的左右两侧，所述第一重掺杂接触区与所述第一型掺杂区相连，所述第一型掺杂区和第二型掺杂区的接触区域形成PN结，所述调制臂工作区中的第一型掺杂区和第二型掺杂区之间形成的接触区域的面积大于第一型掺杂区和第二型掺杂区之间最小接触区域的面积。
本发明实施例中，所述第一重掺杂接触区、第一型掺杂区、第二型掺杂区、第二重掺杂接触区分别为p+、p、n、n+区、或分别为n+、n、p、p+区。
一个实施例中，所述调制臂工作区中的第二型掺杂区半包围住第一型掺杂区，且所述调制臂工作区的第一型掺杂区和第二型掺杂区之间的PN结与第一平面的相交线呈现类似J型的曲线；
其中，所述第一平面为所述硅基调制器的纵向截面。
一个实施例中，俯视所述硅基调制器时，所述调制臂工作区中存在多个条形的第一型掺杂区和多个条形的第二型掺杂区，所述条形的第一型掺杂区与所述条形的第二型掺杂区交替连续分布，所有所述条形的第一型掺杂区间相互贯通，所有所述条形的第二型掺杂区间相互贯通，且所述调制臂工作区的第一型掺杂区和第二型掺杂区之间的PN结与第一平面的相交线呈现为类似矩形波的折线；
其中，所述第一平面为所述硅基调制器的纵向截面。
其中，所述条形的第一型掺杂区以及所述条形的第二型掺杂区、均与所述第一重掺杂接触区或第二重掺杂接触区与调制臂工作区之间的接触面相平行。
一个实施例中，俯视所述硅基调制器时，所述调制臂工作区中的第二型掺杂区点阵式分布在所述第一型掺杂区中；所述调制臂工作区的第一型掺杂区和第二型掺杂区之间的PN结与第一平面的相交线有的呈现为类似矩形波的折线，有的呈现为类似L型折线，且所述第一型掺杂区整体贯通相连，所述第二型掺杂区整体贯通相连；
其中，所述第一平面为所述硅基调制器的纵向截面；所述呈现为类似矩形波折线的相交线对应的所述第一平面与呈现为类似L型折线的相交线对应的所述第一平面为两个不同的平面。
本发明实施例还提供了一种硅基调制器的制备方法，包括：形成第一型掺杂衬底，并利用刻蚀工艺将所述第一型掺杂衬底制备成光波导；
利用刻蚀工艺形成光波导两边的接触区，然后分别利用离子注入方法向所述两个接触区分别注入设定浓度的第一型离子或第二型离子，形成第一重掺杂接触区和第二重掺杂接触区；该方法还包括：
直接利用离子注入方法形成第二型掺杂区，得到调制臂工作区；或者，
利用刻蚀工艺设定第二型掺杂区在水平面上的图案，然后利用离子注入方法注入设定浓度的第二型离子，并退火形成第二型掺杂区，得到调制臂工作区；
其中，所述调制臂工作区中的第一型掺杂区和第二型掺杂区之间形成的接触区域的面积大于第一型掺杂区和第二型掺杂区之间最小接触区域的面积。
一个实施例中，所述直接利用离子注入方法形成第二型掺杂区，得到调制臂工作区，包括：
在设定的角度范围内向所述光波导单次或多次注入第二型离子，然后退火激活注入的所述第二型离子，形成设定离子浓度的第二型掺杂区，得到调制臂工作区；
其中，所述设定的角度范围为：与竖直方向呈现15-75度、且与所述第一重掺杂接触区和第二重掺杂接触区之间水平连线平行。
一个实施例中，所述利用刻蚀工艺和离子注入方法形成第二型掺杂区，得到调制臂工作区，包括：
利用刻蚀工艺设定第二型掺杂区在水平面上的图案，所述图案为多个相互间隔的条形；
向所述第二型掺杂区对应的图案区域垂直纵向注入第二型离子，去除所述第一型掺杂区上的感光材料；
在设定的角度范围内向所述光波导单次或多次注入第二型离子；
退火激活注入的所述第二型离子，形成设定离子浓度的第二型掺杂区，得到调制臂工作区；
其中，所述设定的角度范围为：与竖直方向呈现15-75度、且与所述第一重掺杂接触区和第二重掺杂接触区之间水平连线平行。
一个实施例中，所述利用刻蚀工艺和离子注入方法形成第二型掺杂区，得到调制臂工作区，包括：
利用刻蚀工艺设定第二型掺杂区在水平面上的图案，所述图案为点阵形；
向所述第二型掺杂区对应的图案区域垂直纵向注入第二型离子，去除所述第一型掺杂区上的感光材料；
在设定的角度范围内向所述光波导单次或多次注入第二型离子；
退火激活注入的所述第二型离子，形成设定离子浓度的第二型掺杂区，得到调制臂工作区；
其中，所述设定的角度范围为：与竖直方向呈现15-75度、且与所述第一重掺杂接触区和第二重掺杂接触区之间水平连线平行。
本发明实施例提供的硅基调制器及其制备方法，所述硅基调制器包括：第一重掺杂接触区和第二重掺杂接触区，以及由第一型掺杂区和第二型掺杂区组成的调制臂工作区，所述第一重掺杂接触区和第二重掺杂接触区分别位于所述调制臂工作区的左右两侧，所述第一重掺杂接触区与所述第一型掺杂区相连，所述第一型掺杂区和第二型掺杂区的接触区域形成PN结，所述调制臂工作区中的第一型掺杂区和第二型掺杂区之间形成的接触区域的面积大于第一型掺杂区和第二型掺杂区之间最小接触区域的面积。本发明实施例硅基调制器的PN结作用范围相比传统的硅基调制器的PN结有所增大，调整效率大大提高，有利于器件的集成。另外，本发明实施例所述硅基调制器制备方法稳定且可靠，可重复性高。
附图概述
在附图(其不一定是按比例绘制的)中，相似的附图标记可在不同的视图中描述相似的部件。具有不同字母后缀的相似附图标记可表示相似部件的不同示例。附图以示例而非限制的方式大体示出了本文中所讨论的各个实施 例。
图1(a)为传统耗尽型MZI调制器(纵向单个PN结)的俯视结构示意图；
图1(b)为传统耗尽型MZI调制器(纵向单个PN结)沿图1(a)A1-A2线的剖视结构示意图；
图2(a)为本发明一实施例所述硅基调制器的俯视结构示意图；
图2(b)为图2(a)所述硅基调制器沿A1-A2线的剖视结构示意图；
图3(a)为本发明另一实施例所述硅基调制器的俯视结构示意图；
图3(b)为图3(a)所述硅基调制器沿A1-A2线的剖视结构示意图；
图4(a)为本发明另一实施例所述硅基调制器的俯视结构示意图；
图4(b)为图4(a)所述硅基调制器沿A1-A2线的剖视结构示意图；
图4(c)为图4(a)所述硅基调制器沿B1-B2线的剖视结构示意图；
图5至图8为传统硅基调制器制备流程中对应的几种中间结构剖视图；
图9为实施例四所述硅基调制器离子注入得到的结构剖视图；
图10为实施例五所述硅基调制器第一次离子注入得到的结构剖视图；
图11为实施例五所述硅基调制器第二次离子注入得到的结构剖视图；
图12为实施例六所述硅基调制器第一次离子注入得到的结构剖视图；
图13为实施例六所述硅基调制器第二次离子注入得到的结构剖视图。
本发明的较佳实施方式
以下是对本文详细描述的主题的概述。本概述并非是为了限制权利要求的保护范围。
本发明的实施例提出一种硅基调制器，所述硅基调制器包括：第一重掺杂接触区和第二重掺杂接触区，以及由第一型掺杂区和第二型掺杂区组成的调制臂工作区，所述第一重掺杂接触区和第二重掺杂接触区分别位于所述调制臂工作区的左右两侧，所述第一重掺杂接触区与所述第一型掺杂区相连， 所述第一型掺杂区和第二型掺杂区的接触区域形成PN结，所述调制臂工作区中的第一型掺杂区和第二型掺杂区之间形成的接触区域的面积大于第一型掺杂区和第二型掺杂区之间最小接触区域的面积。
本发明实施例中，所述第一型掺杂区和第二型掺杂区之间最小接触区域可为：图1中所示纵向对称分布的第一型掺杂区和第二型掺杂区之间的接触区域。
本发明实施例中，所述第一重掺杂接触区、第一型掺杂区、第二型掺杂区、第二重掺杂接触区分别为p+、p、n、n+区、或分别为n+、n、p、p+区。
在一个实施例中，所述调制臂工作区中的第二型掺杂区半包围住第一型掺杂区，且所述调制臂工作区的第一型掺杂区和第二型掺杂区之间的PN结与第一平面的相交线呈现类似J型的曲线；
其中，所述第一平面为所述硅基调制器的纵向截面。
在一个实施例中，俯视所述硅基调制器时，所述调制臂工作区中存在多个条形的第一型掺杂区和多个条形的第二型掺杂区，所述条形的第一型掺杂区与所述条形的第二型掺杂区交替连续分布，所有所述条形的第一型掺杂区间相互贯通，所有所述条形的第二型掺杂区间相互贯通，且所述调制臂工作区的第一型掺杂区和第二型掺杂区之间的PN结与第一平面的相交线呈现为类似矩形波的折线；
其中，所述第一平面为所述硅基调制器的纵向截面。
其中，所述条形的第一型掺杂区以及所述条形的第二型掺杂区、均可与所述第一重掺杂接触区或第二重掺杂接触区与调制臂工作区之间的接触面相平行。
在一个实施例中，俯视所述硅基调制器时，所述调制臂工作区中的第二型掺杂区点阵式分布在所述第一型掺杂区中；所述调制臂工作区的第一型掺杂区和第二型掺杂区之间的PN结与第一平面的相交线有的呈现为类似矩形波的折线，有的呈现为类似L型折线，且所述第一型掺杂区整体贯通相连，所述第二型掺杂区整体贯通相连；
其中，所述第一平面为所述硅基调制器的纵向截面；所述呈现为类似矩 形波折线的相交线对应的所述第一平面与呈现为类似L型折线的相交线对应的所述第一平面为两个不同的平面。
本发明实施例硅基调制器的PN结作用范围相比传统的硅基调制器的PN结有所增大，调整效率大大提高，有利于器件的集成。
下面结合附图及具体实施例对本发明作进一步详细说明。
实施例一
图2为本发明一实施例所述硅基调制器的结构示意图，如图2所示，所述硅基调制器包括：第一重掺杂接触区和第二重掺杂接触区，以及由第一型掺杂区和第二型掺杂区组成的调制臂工作区，所述第一重掺杂接触区和第二重掺杂接触区分别位于所述调制臂工作区的左右两侧，所述第一重掺杂接触区与所述第一型掺杂区相连，所述第一型掺杂区和第二型掺杂区的接触区域形成PN结；其中，所述调制臂工作区中的第二型掺杂区半包围住第一型掺杂区，且所述调制臂工作区的第一型掺杂区和第二型掺杂区之间的PN结与第一平面的相交线呈现类似J型的曲线；
其中，结合图2(a)(b)所示，所述第一平面为：俯视所述硅基调制器时，沿所述A1-A2线进行剖切形成的。
其中，所述第一重掺杂接触区、第一型掺杂区、第二型掺杂区、第二重掺杂接触区分别为p+、p、n、n+区、或分别为n+、n、p、p+区。
实施例二
图3为本发明另一实施例所述硅基调制器的结构示意图，如图3所示，所述硅基调制器包括：第一重掺杂接触区和第二重掺杂接触区，以及由第一型掺杂区和第二型掺杂区组成的调制臂工作区，所述第一重掺杂接触区和第二重掺杂接触区分别位于所述调制臂工作区的左右两侧，所述第一重掺杂接触区与所述第一型掺杂区相连，所述第一型掺杂区和第二型掺杂区的接触区域形成PN结；其中，俯视所述硅基调制器时，所述调制臂工作区中存在多个条形的第一型掺杂区和多个条形的第二型掺杂区，所述条形的第一型掺杂区与所述条形的第二型掺杂区交替连续分布，所有所述条形的第一型掺杂区间相互贯通，所有所述条形的第二型掺杂区间相互贯通，且所述调制臂工作 区的第一型掺杂区和第二型掺杂区之间的PN结与第一平面的相交线呈现为类似矩形波的折线；
其中，结合图3(a)(b)所示，所述第一平面为：俯视所述硅基调制器时，沿所述A1-A2线进行剖切形成的；所述条形的第一型掺杂区以及所述条形的第二型掺杂区、均与所述第一重掺杂接触区或第二重掺杂接触区与调制臂工作区之间的接触面相平行。
实施例三
图4为本发明另一实施例所述硅基调制器的结构示意图，如图4所示，所述硅基调制器包括：第一重掺杂接触区和第二重掺杂接触区，以及由第一型掺杂区和第二型掺杂区组成的调制臂工作区，所述第一重掺杂接触区和第二重掺杂接触区分别位于所述调制臂工作区的左右两侧，所述第一重掺杂接触区与所述第一型掺杂区相连，所述第一型掺杂区和第二型掺杂区的接触区域形成PN结；其中，俯视所述硅基调制器时，所述调制臂工作区中的第二型掺杂区点阵式分布在所述第一型掺杂区中；所述调制臂工作区的第一型掺杂区和第二型掺杂区之间的PN结与第一平面的相交线有的呈现为类似矩形波的折线，有的呈现为类似L型折线，且所述第一型掺杂区整体贯通相连，所述第二型掺杂区整体贯通相连；
其中，结合图4(a)、(b)和(c)所示，所述第一平面为所述硅基调制器的纵向截面；所述呈现为类似矩形波折线的相交线对应的所述第一平面与呈现为类似L型折线的相交线对应的所述第一平面为两个不同的平面，所述呈现为类似矩形波折线的相交线位于沿所述A1-A2线进行剖切形成的截面上；所述呈现为类似L型折线的相交线位于沿所述B1-B2线进行剖切形成的截面上。
下面对本发明实施例所述硅基调制器的制备方法进行描述。
首先对图1中所示传统硅基调制器的制备方法进行简单描述，其包括如下包括：
步骤一：提供第一型(n或p型)掺杂SOI衬底，直接使用掺杂浓度为 1E17cm-3—1E19cm-3之间的衬底，或者使用离子注入方法将掺杂浓度调整到该范围内，如图5所示；
步骤二：利用光刻刻蚀工艺制备光波导，即得到图6所示的结构；
步骤三：利用光刻刻蚀工艺设定光波导两边的接触区，然后分别利用离子注入方法注入相应的离子，实现浓度为1E19cm-3—1E21cm-3的重掺杂区域，如图7所示；
步骤四：利用光刻刻蚀工艺设定第二型(p或n型)离子掺杂区域；
步骤五：垂直纵向注入第二型离子，退火激活注入的离子，退火后的第二掺杂浓度范围为1E17cm-3—1E19cm-3，结构如图8所示。
基于上述传统的制备方法，本发明实施例还提供了一种硅基调制器的制备方法，包括：
形成第一型掺杂衬底，并利用刻蚀工艺将所述第一型掺杂衬底制备成光波导；
利用刻蚀工艺形成光波导两边的接触区，然后分别利用离子注入方法向所述两个接触区分别注入设定浓度的第一型离子或第二型离子，形成第一重掺杂接触区和第二重掺杂接触区；
该方法还包括：
直接利用离子注入方法形成第二型掺杂区，得到调制臂工作区；或者，
利用刻蚀工艺设定第二型掺杂区在水平面上的图案，然后利用离子注入方法注入设定浓度的第二型离子，并退火形成第二型掺杂区，得到调制臂工作区；
其中，所述调制臂工作区中的第一型掺杂区和第二型掺杂区之间形成的接触区域的面积大于第一型掺杂区和第二型掺杂区之间最小接触区域的面积。
第一型掺杂区和第二型掺杂区通过掺杂形成PN结中的P区和N区。
由于此时的掺杂区是非特殊形状，因此第一型掺杂区衬底可以通过离子扩散工艺或者离子注入工艺形成。
形成重掺杂区和第二型掺杂区的所有工艺完成之后，剩余第一型掺杂区衬底部分即为第一型掺杂区。
一个实施例中，所述直接利用离子注入方法形成第二型掺杂区，得到调制臂工作区，包括：
在设定的角度范围内向所述光波导单次或多次注入第二型离子，然后退火激活注入的所述第二型离子，形成设定离子浓度的第二型掺杂区，得到调制臂工作区；
其中，所述设定的角度范围为：与竖直方向呈现15-75度、且与所述第一重掺杂接触区和第二重掺杂接触区之间水平连线平行。
一个实施例中，所述利用刻蚀工艺和离子注入方法形成第二型掺杂区，得到调制臂工作区，包括：
利用刻蚀工艺设定第二型掺杂区在水平面上的图案，所述图案为多个相互间隔的条形；
向所述第二型掺杂区对应的图案区域垂直纵向注入第二型离子，去除第一型掺杂区上的感光材料；
在设定的角度范围内向所述光波导单次或多次注入第二型离子；
退火激活注入的所述第二型离子，形成设定离子浓度的第二型掺杂区，得到调制臂工作区；
其中，所述设定的角度范围为：与竖直方向呈现15-75度、且与所述第一重掺杂接触区和第二重掺杂接触区之间水平连线平行。
一个实施例中，所述利用刻蚀工艺和离子注入方法形成第二型掺杂区，得到调制臂工作区，包括：
利用刻蚀工艺设定第二型掺杂区在水平面上的图案，所述图案为点阵形；
向所述第二型掺杂区对应的图案区域垂直纵向注入第二型离子，去除第一型掺杂区上的感光材料；
在设定的角度范围内向所述光波导单次或多次注入第二型离子；
退火激活注入的所述第二型离子，形成设定离子浓度的第二型掺杂区， 得到调制臂工作区；
其中，所述设定的角度范围为：与竖直方向呈现15-75度、且与所述第一重掺杂接触区和第二重掺杂接触区之间水平连线平行。
下面结合附图及具体实施例对本发明进行详细描述。
实施例四
本实施例所述硅基调制器的结构为图2所示，其制备方法如下：
步骤一至步骤三的方法与上文传统硅基调制器的制备方法完全相同，此处不再详述。
步骤四：调整离子注入的角度(与竖直方向呈现15-75度，且与图2所述A1-A2线平行)，单次或者多次注入第二型离子(可通过调整注入角度或者增大左侧重掺杂接触区，即n+/p+区域的面积，确保不要注入到左侧的第一型掺杂区，即：n/p区域)，调整第二型离子注入的能量和剂量来控制PN结的深度(能量越高深度越大)和浓度(剂量越高浓度越大)，最终使得PN结区域尽量靠近调制臂工作区的中间位置；然后退火激活注入的离子，退火后的第二型离子的掺杂浓度范围为1E17cm-3—1E19cm-3，如图9所示。
本发明实施例与传统的纵向单个PN结调制器相比有下面优点：
1)本实施例所述调制器的PN结作用范围更大(长度及面积均有所增加)，利用COMSOL有限元软件模拟可以发现，当掺杂浓度为1E18cm-3时，所述图2所示折线PN结结构的MZI调制器调制效率是传统的纵向单个PN结调制器的两倍；
2)折线PN结结构MZI调制器的制备过程省去了现有的“利用光刻技术设定第二型离子掺杂区域”步骤，有效的减少了制备成本，还免去了此步骤带来的误差和成品率的问题；
3)折线PN结结构MZI调制器的第二型掺杂区域是通过调整离子注入的角度实现的，而传统的纵向单个PN结调制器的第二型掺杂区域是由光刻步骤设定出来的，在实际情况中，调整离子注入的角度比光刻步骤的可靠性、稳定性、一致性更高，所以折线PN结结构MZI调制器的制备整体上的重复性可靠性更高。
实施例五
本实施例所述硅基调制器的结构为图3所示，其制备方法如下：
步骤一至步骤三的方法与上文传统硅基调制器的制备方法完全相同，此处不再详述。
步骤四：利用光刻技术设定条形第二型掺杂区在水平面上的图案；
该步骤中，本领域技术人员可知在设定第二型掺杂区在水平面上的图案时，需要进行感光材料，如：光刻胶的涂布，形成第二型掺杂区在水平面上的图案后，所述第一型掺杂区上的光刻胶还未去除，以防止后续第一次第二型离子注入时将第二型离子注入到所述第一型掺杂区。
步骤五：第一次第二型离子注入：垂直纵向注入，得到图10所示的单结或多结的条形注入结构，然后去除第一型掺杂区上的光刻胶；
步骤六：第二次第二型离子注入：调整离子注入的角度(与竖直方向呈现15-75度，且与图3所述A1-A2线平行)，单次或者多次注入第二型离子，将多个条形结构穿通起来，如上文所述，调整离子注入的能量和剂量来控制PN结的深度和浓度，注入深度尽量靠近调制臂工作区的表面位置；退火激活注入的第二型离子，退火后的第二掺杂浓度范围为1E17cm-3—1E19cm-3，得到图11所示的结构，调整光波导中的PN结位置，实现尽量大的调制效率。
本发明实施例与传统的纵向单个PN结调制器相比有下面优点：
1)所述条形PN结结构MZI调制器的PN结作用范围更大，利用COMSOL有限元软件模拟可以发现，当掺杂浓度为3E18cm-3时，条形PN结结构MZI调制器调制效率是传统的纵向单个PN结调制器的三倍；
2)条形PN结结构MZI调制器的制备过程虽然增加了步骤“第二次第二型离子注入”，但是该步骤的工艺成本和复杂度不高，可靠性和一致性很好，所以由于此步骤引起代价较低。
实施例六
本实施例所述硅基调制器的结构为图4所示，其制备方法如下：
步骤一至步骤三的方法与上文传统硅基调制器的制备方法完全相同，此处不再详述。
步骤四：利用光刻技术设定点阵形第二型掺杂区在水平面上的图案；
该步骤中，本领域技术人员可知在设定第二型掺杂区在水平面上的图案时，需要进行感光材料，如：光刻胶的涂布，形成第二型掺杂区在水平面上的图案后，所述第一型掺杂区上的光刻胶还未去除，以防止后续第一次第二型离子注入时将第二型离子注入到所述第一型掺杂区。
步骤五：第一次第二型离子注入：垂直纵向注入，实现多柱形的注入结构，，然后去除第一型掺杂区上的光刻胶，得到图12所示的结构(其为硅基调制器沿图4中A1-A2线的剖视图)；
步骤六：第二次第二型离子注入：调整离子注入的角度(与竖直方向呈现15-75度，且与图3所述A1-A2线平行)，单次或者多次注入，将多条柱形结构穿通起来，调整离子注入的能量和剂量来控制PN结的深度和浓度，注入深度尽量靠近调制臂工作区的表面位置；退火激活注入的第二型离子，退火后的第二掺杂浓度范围为1E17cm-3—1E19cm-3，得到图13所示的结构，调整光波导中的PN结位置，实现尽量大的调制效率。
本发明实施例与传统的纵向单个PN结调制器相比有下面优点：
1)所述点阵PN结结构MZI调制器的PN结作用范围更大，可以有效的提高调制器的调制效率；
2)所述点阵PN结结构MZI调制器的制备过程虽然增加了步骤“第二次第二型离子注入”，但是该步骤的工艺成本和复杂度不高，可靠性和一致性很好，所以由于此步骤引起代价较低。
在阅读并理解了附图和详细描述后，可以明白其他方面。
本领域内的技术人员应明白，本发明的实施例可提供为方法、系统、或计算机程序产品。因此，本发明可采用硬件实施例、软件实施例、或结合软件和硬件方面的实施例的形式。而且，本发明可采用在一个或多个其中包含有计算机可用程序代码的计算机可用存储介质(包括但不限于磁盘存储器和光学存储器等)上实施的计算机程序产品的形式。
本发明是参照根据本发明实施例的方法、设备(系统)、和计算机程序产品的流程图和/或方框图来描述的。应理解可由计算机程序指令实现流程图和/或方框图中的每一流程和/或方框、以及流程图和/或方框图中的流程和/或方框的结合。可提供这些计算机程序指令到通用计算机、专用计算机、嵌入式处理机或其他可编程数据处理设备的处理器以产生一个机器，使得通过计算机或其他可编程数据处理设备的处理器执行的指令产生用于实现在流程图一个流程或多个流程和/或方框图一个方框或多个方框中指定的功能的装置。
这些计算机程序指令也可存储在能引导计算机或其他可编程数据处理设备以特定方式工作的计算机可读存储器中，使得存储在该计算机可读存储器中的指令产生包括指令装置的制造品，该指令装置实现在流程图一个流程或多个流程和/或方框图一个方框或多个方框中指定的功能。
这些计算机程序指令也可装载到计算机或其他可编程数据处理设备上，使得在计算机或其他可编程设备上执行一系列操作步骤以产生计算机实现的处理，从而在计算机或其他可编程设备上执行的指令提供用于实现在流程图一个流程或多个流程和/或方框图一个方框或多个方框中指定的功能的步骤。
以上所述，仅为本发明的较佳实施例而已，并非用于限定本发明的保护范围。
工业实用性
本发明实施例提供的硅基调制器及其制备方法，所述硅基调制器包括：第一重掺杂接触区和第二重掺杂接触区，以及由第一型掺杂区和第二型掺杂区组成的调制臂工作区，所述第一重掺杂接触区和第二重掺杂接触区分别位于所述调制臂工作区的左右两侧，所述第一重掺杂接触区与所述第一型掺杂区相连，所述第一型掺杂区和第二型掺杂区的接触区域形成PN结，所述调制臂工作区中的第一型掺杂区和第二型掺杂区之间形成的接触区域的面积大于第一型掺杂区和第二型掺杂区之间最小接触区域的面积。本发明实施例硅基调制器的PN结作用范围相比传统的硅基调制器的PN结有所增大，调整效率大大提高，有利于器件的集成。另外，本发明实施例所述硅基调制器制备方法稳定且可靠，可重复性高。因此本发明具有很强的工业实用性。

Claims (10)

  1. 一种硅基调制器，所述硅基调制器包括：第一重掺杂接触区和第二重掺杂接触区，以及由第一型掺杂区和第二型掺杂区组成的调制臂工作区，所述第一重掺杂接触区和第二重掺杂接触区分别位于所述调制臂工作区的左右两侧，所述第一重掺杂接触区与所述第一型掺杂区相连，所述第一型掺杂区和所述第二型掺杂区的接触区域形成PN结，其中，所述调制臂工作区中的所述第一型掺杂区和所述第二型掺杂区之间形成的接触区域的面积大于所述第一型掺杂区和所述第二型掺杂区之间最小接触区域的面积。
  2. 根据权利要求1所述的硅基调制器，其中，所述第一重掺杂接触区、第一型掺杂区、第二型掺杂区、第二重掺杂接触区分别为p+、p、n、n+区、或分别为n+、n、p、p+区。
  3. 根据权利要求1所述的硅基调制器，其中，所述调制臂工作区中的所述第二型掺杂区半包围住所述第一型掺杂区，且所述调制臂工作区的所述第一型掺杂区和所述第二型掺杂区之间的PN结与第一平面的相交线呈现类似J型的曲线；
    其中，所述第一平面为所述硅基调制器的纵向截面。
  4. 根据权利要求1所述的硅基调制器，其中，俯视所述硅基调制器时，所述调制臂工作区中存在多个条形的第一型掺杂区和多个条形的第二型掺杂区，多个所述条形的第一型掺杂区与多个所述条形的第二型掺杂区交替连续分布，所有条形的第一型掺杂区间相互贯通，所有条形的第二型掺杂区间相互贯通，且所述调制臂工作区的所述第一型掺杂区和所述第二型掺杂区之间的PN结与第一平面的相交线呈现为类似矩形波的折线；
    其中，所述第一平面为所述硅基调制器的纵向截面。
  5. 根据权利要求4所述的硅基调制器，其中，多个所述条形的第一型掺杂区以及多个所述条形的第二型掺杂区、均与所述第一重掺杂接触区或所述第二重掺杂接触区与所述调制臂工作区之间的接触面相平行。
  6. 根据权利要求1所述的硅基调制器，其中，俯视所述硅基调制器时，所述调制臂工作区中的所述第二型掺杂区点阵式分布在所述第一型掺杂区 中；所述调制臂工作区的所述第一型掺杂区和所述第二型掺杂区之间的PN结与第一平面的相交线有的呈现为类似矩形波的折线，有的呈现为类似L型折线，且所述第一型掺杂区整体贯通相连，所述第二型掺杂区整体贯通相连；
    其中，所述第一平面为所述硅基调制器的纵向截面；所述呈现为类似矩形波折线的相交线对应的所述第一平面与呈现为类似L型折线的相交线对应的所述第一平面为两个不同的平面。
  7. 一种硅基调制器的制备方法，包括：
    形成第一型掺杂衬底，并利用刻蚀工艺将所述第一型掺杂衬底制备成光波导；
    利用刻蚀工艺形成所述光波导两边的接触区，然后分别利用离子注入方法向所述两个接触区分别注入设定浓度的第一型离子或第二型离子，形成第一重掺杂接触区和第二重掺杂接触区；
    该方法还包括：
    直接利用离子注入方法形成第二型掺杂区，得到调制臂工作区；或者，
    利用刻蚀工艺设定所述第二型掺杂区在水平面上的图案，然后利用离子注入方法注入设定浓度的第二型离子，并退火形成所述第二型掺杂区，得到所述调制臂工作区；
    其中，所述调制臂工作区中的第一型掺杂区和第二型掺杂区之间形成的接触区域的面积大于所述第一型掺杂区和所述第二型掺杂区之间最小接触区域的面积。
  8. 根据权利要求7所述的方法，其中，所述直接利用离子注入方法形成第二型掺杂区，得到调制臂工作区的步骤包括：
    在设定的角度范围内向所述光波导单次或多次注入所述第二型离子，然后退火激活注入的所述第二型离子，形成设定离子浓度的所述第二型掺杂区，得到所述调制臂工作区；
    其中，所述设定的角度范围为：与竖直方向呈现15-75度、且与所述第一重掺杂接触区和第二重掺杂接触区之间水平连线平行。
  9. 根据权利要求7所述的方法，其中，所述利用刻蚀工艺设定所述第二 型掺杂区在水平面上的图案，然后利用离子注入方法注入设定浓度的第二型离子，并退火形成所述第二型掺杂区，得到所述调制臂工作区的步骤包括：
    利用刻蚀工艺设定第二型掺杂区在水平面上的图案，所述图案为多个相互间隔的条形；
    向所述第二型掺杂区对应的图案区域垂直纵向注入所述第二型离子，去除所述第一型掺杂区上的感光材料；
    在设定的角度范围内向所述光波导单次或多次注入所述第二型离子；
    退火激活注入的所述第二型离子，形成设定离子浓度的所述第二型掺杂区，得到所述调制臂工作区；
    其中，所述设定的角度范围为：与竖直方向呈现15-75度、且与所述第一重掺杂接触区和第二重掺杂接触区之间水平连线平行。
  10. 根据权利要求7所述的方法，其中，所述利用刻蚀工艺设定所述第二型掺杂区在水平面上的图案，然后利用离子注入方法注入设定浓度的第二型离子，并退火形成所述第二型掺杂区，得到所述调制臂工作区的步骤包括：
    利用刻蚀工艺设定第二型掺杂区在水平面上的图案，所述图案为点阵形；
    向所述第二型掺杂区对应的图案区域垂直纵向注入第二型离子，去除所述第一型掺杂区上的感光材料；
    在设定的角度范围内向所述光波导单次或多次注入所述第二型离子；
    退火激活注入的所述第二型离子，形成设定离子浓度的所述第二型掺杂区，得到所述调制臂工作区；
    其中，所述设定的角度范围为：与竖直方向呈现15-75度、且与所述第一重掺杂接触区和第二重掺杂接触区之间水平连线平行。
PCT/CN2016/079060 2015-04-14 2016-04-12 一种硅基调制器及其制备方法 Ceased WO2016165608A1 (zh)

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