WO2016169511A1 - 用于晶圆的预对准装置及方法 - Google Patents

用于晶圆的预对准装置及方法 Download PDF

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Publication number
WO2016169511A1
WO2016169511A1 PCT/CN2016/079979 CN2016079979W WO2016169511A1 WO 2016169511 A1 WO2016169511 A1 WO 2016169511A1 CN 2016079979 W CN2016079979 W CN 2016079979W WO 2016169511 A1 WO2016169511 A1 WO 2016169511A1
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WIPO (PCT)
Prior art keywords
wafer
mark
alignment
center
coordinate system
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Ceased
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PCT/CN2016/079979
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English (en)
French (fr)
Inventor
王刚
蒲运斌
王邵玉
郑教增
姜杰
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Shanghai Micro Electronics Equipment Co Ltd
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Shanghai Micro Electronics Equipment Co Ltd
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Application filed by Shanghai Micro Electronics Equipment Co Ltd filed Critical Shanghai Micro Electronics Equipment Co Ltd
Priority to EP16782658.5A priority Critical patent/EP3288063B1/en
Priority to KR1020177033877A priority patent/KR102048301B1/ko
Priority to JP2017555261A priority patent/JP6530825B2/ja
Priority to SG11201708695PA priority patent/SG11201708695PA/en
Priority to US15/568,657 priority patent/US10276417B2/en
Publication of WO2016169511A1 publication Critical patent/WO2016169511A1/zh
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/50—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for positioning, orientation or alignment
    • H10P72/53—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for positioning, orientation or alignment using optical controlling means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/50—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for positioning, orientation or alignment
    • H10P72/57—Mask-wafer alignment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/50—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for positioning, orientation or alignment
    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06T—IMAGE DATA PROCESSING OR GENERATION, IN GENERAL
    • G06T7/00—Image analysis
    • G06T7/0002—Inspection of images, e.g. flaw detection
    • G06T7/0004—Industrial image inspection
    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06T—IMAGE DATA PROCESSING OR GENERATION, IN GENERAL
    • G06T7/00—Image analysis
    • G06T7/70—Determining position or orientation of objects or cameras
    • G06T7/73—Determining position or orientation of objects or cameras using feature-based methods
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/06—Apparatus for monitoring, sorting, marking, testing or measuring
    • H10P72/0606—Position monitoring, e.g. misposition detection or presence detection
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/76—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches
    • H10P72/7604—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support
    • H10P72/7618—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a movable susceptor, stage or support, others than those only rotating on their own vertical axis, e.g. susceptors on a rotating carrousel
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P74/00—Testing or measuring during manufacture or treatment of wafers, substrates or devices
    • H10P74/20—Testing or measuring during manufacture or treatment of wafers, substrates or devices characterised by the properties tested or measured, e.g. structural or electrical properties
    • H10P74/203—Structural properties, e.g. testing or measuring thicknesses, line widths, warpage, bond strengths or physical defects
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P74/00—Testing or measuring during manufacture or treatment of wafers, substrates or devices
    • H10P74/23—Testing or measuring during manufacture or treatment of wafers, substrates or devices characterised by multiple measurements, corrections, marking or sorting processes
    • H10P74/235—Testing or measuring during manufacture or treatment of wafers, substrates or devices characterised by multiple measurements, corrections, marking or sorting processes comprising optical enhancement of defects or not-directly-visible states
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W46/00—Marks applied to devices, e.g. for alignment or identification
    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06T—IMAGE DATA PROCESSING OR GENERATION, IN GENERAL
    • G06T2207/00—Indexing scheme for image analysis or image enhancement
    • G06T2207/30—Subject of image; Context of image processing
    • G06T2207/30108—Industrial image inspection
    • G06T2207/30148—Semiconductor; IC; Wafer
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W46/00—Marks applied to devices, e.g. for alignment or identification
    • H10W46/201—Marks applied to devices, e.g. for alignment or identification located on the periphery of wafers, e.g. orientation notches or lot numbers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W46/00—Marks applied to devices, e.g. for alignment or identification
    • H10W46/301—Marks applied to devices, e.g. for alignment or identification for alignment

Definitions

  • the present invention relates to the field of integrated circuit equipment manufacturing, and more particularly to a pre-alignment apparatus and method for a wafer.
  • the edge vision acquisition system mainly completes the collection of the edge of the wafer (such as the flat side) and the notch mark, and then through image processing and calculation, calculates the eccentricity and deviation of the wafer relative to the workpiece table, thereby making the centering component of the workpiece table system and The orientation component compensates for the offset. Since the shape of the wafer itself produced by different manufacturers has a certain difference from the shape of the notch, the position of the mark is not necessarily the same as the gap, and the edge centering accuracy of the wafer is different after pre-alignment by different lithography machines. Therefore, the accuracy of the film will not meet the needs of the front lithography machine.
  • the present invention discloses a high precision pre-alignment apparatus and method for wafers.
  • the present invention provides a pre-alignment device for a wafer, comprising: a workpiece stage for carrying the wafer, wherein the wafer has a symmetric distribution about a center of the wafer a first alignment mark and a second alignment mark; an edge vision acquisition system for implementing a first position on the wafer according to a relative position of the edge or the notch mark on the wafer with respect to the workpiece stage Compensating; a mark detection system for respectively acquiring images of the first and second alignment marks, and determining the crystal according to positions of the first and second alignment marks in a mark detection system coordinate system The relative positional relationship between the center of the circle and the center of the workpiece table, thereby achieving the second position compensation of the wafer, wherein the horizontal axis of the mark detection system coordinate system is defined as the connection between the center of the workpiece stage and the center of the mark detection system The vertical axis is defined as a line perpendicular to the horizontal axis and passing through the center of the work
  • the mark detecting system is configured to calculate a rotation angle between the alignment mark coordinate system and the mark detection system coordinate system according to the coordinates of the first and second alignment marks in the mark detection system coordinate system and Offset, and determining a relative positional relationship between the center of the wafer and the center of the workpiece stage according to the relative angle between the rotation angle and the offset and the origin of the alignment mark coordinate system and the center of the wafer, wherein
  • the horizontal axis of the alignment mark coordinate system is defined as the line connecting the first and second alignment marks, the origin is defined as the midpoint of the line connecting the first and second alignment marks, and the vertical axis passes through the origin Vertical to the connection.
  • the edge vision acquisition system includes a line array CCD detector
  • the mark detection system includes a side array CCD detector.
  • the marker detection system includes a motion component, a focus component, and a marker acquisition vision component, the motion component driving the marker acquisition vision component to search for the first or second alignment marker,
  • a focus assembly is used to adjust a focal length of the marker acquisition vision component relative to the first or second alignment marker, the marker acquisition vision component for acquiring an image of the first or second alignment marker.
  • the focusing component is coupled to the moving component, and the marking acquisition visual component is coupled to the focusing component, the motion component is configured to drive the focusing component along a radial direction of the wafer Moving, the focusing component is configured to drive the marker acquisition vision component to move in a vertical direction.
  • the marker acquisition vision component includes a point source, a lens, and a side array CCD camera.
  • edge vision acquisition system and the mark detection system are respectively located on both sides of the wafer in a radial direction of the wafer.
  • the invention also discloses a pre-alignment method for a wafer, comprising: step 1: providing a first alignment mark and a second alignment mark on the wafer substantially symmetrically distributed about a center of the wafer;
  • the edge vision acquisition system realizes the first position compensation of the wafer according to the relative position of the edge or the notch on the wafer with respect to the workpiece stage; and the third step, searching and collecting the crystal by the mark detection system respectively An image of the first and second alignment marks on the circle; step four, according to the first And determining a relative positional relationship between the center of the wafer and the center of the workpiece stage by determining a position of the second alignment mark in the coordinate system of the mark detection system; and step 5, according to the determined center of the wafer and the center of the workpiece stage The relative positional relationship between the two, to achieve the second position compensation of the wafer, wherein the horizontal axis of the mark detection system coordinate system is defined as the line connecting the center of the workpiece stage and the center of the mark detection system, and
  • step 4 includes calculating a rotation angle and an offset between the alignment mark coordinate system and the mark detection system coordinate system according to the coordinates of the first and second alignment marks in the mark detection system coordinate system, and then Determining a relative positional relationship between the center of the wafer and the center of the workpiece stage according to the rotation angle and the offset and the relative positional relationship between the origin of the alignment mark coordinate system and the center of the wafer, wherein the alignment mark
  • the horizontal axis of the coordinate system is defined as the line connecting the first and second alignment marks
  • the origin is defined as the midpoint of the line connecting the first and second alignment marks
  • the vertical axis passes through the origin and is perpendicular to the Connected.
  • the technical solution disclosed by the present invention can realize the image by collecting the images of the first and second alignment marks after the coarse pre-alignment (ie, the first position compensation).
  • High-precision wafer centering and orientation functions better meet the high-precision accuracy requirements.
  • FIG. 1 is a schematic structural view of an edge vision acquisition system for a pre-alignment device for a wafer provided by the present invention
  • FIG. 2 is a schematic view showing the installation position of the edge vision acquisition system provided by the present invention.
  • FIG. 3 is a schematic structural view of a mark detecting system for a pre-alignment device for a wafer provided by the present invention
  • FIG. 4 is a schematic view showing a mounting position of a mark detecting system for a pre-alignment device for a wafer provided by the present invention
  • FIG. 5 is a schematic diagram of a matching acquisition area of an edge vision acquisition system and a marker detection system for a pre-alignment device for a wafer provided by the present invention
  • FIG. 6 is a schematic diagram of a usage scenario of a pre-alignment device for a wafer provided by the present invention.
  • FIG. 7 is a flow chart of a method for pre-aligning a wafer according to the present invention.
  • the prior art collects edge and notch marks and can only achieve coarse pre-alignment.
  • the invention achieves higher-precision wafer centering and orientation functions by collecting double marks, and better meets the high-sheet precision requirements.
  • the mark detector system (Mark Sensor System) is designed on the wafer.
  • the alignment marks are calibrated to improve the accuracy of the topsheet.
  • the marking detection system can meet three functions to solve the above problems: First, the alignment marks on the wafers transferred to the workpiece table can be more accurately located in the alignment field of view, reducing the difference between different wafers. The precision of the film accuracy caused by the difference of the position of the quasi-marker relative to the geometrical dimensions of the wafer is too large. Second, the mark detection system can be used as a test tool to detect the coordinate position deviation of the alignment mark on the wafer with respect to the geometry of the wafer. 3. The mark detection system can calculate the position of the alignment mark in the wafer coordinate system and the rotational offset relative to the mark detection system coordinate system by comparing the desired position and the measurement position of the alignment mark in the coordinate system of the mark detection system. .
  • the position of the wafer is compensated by the data measured by the mark detection system, so that the wafer is successfully transferred to the workpiece stage according to higher centering and orientation accuracy requirements.
  • FIG. 1 is a schematic structural view of an edge vision acquisition system for a pre-alignment device for a wafer provided by the present invention.
  • the edge vision acquisition system shown in Figure 1 mainly completes the acquisition of the edge of the wafer, and then calculates the eccentricity and deviation of the wafer through image processing and calculation, thereby making the centering component of the workpiece table system And the orientation component compensates for the offset.
  • the edge vision acquisition system 1 is mainly composed of a line CCD camera 10, a base 11, a light source 12, a lens 13, a bracket 14, and an adjustment member 15, and the center of the lens 13 is placed inside the bracket 14 by the adjustment member 15. The distance between the surfaces meets the 8-inch and 12-inch wafer switching space requirements.
  • FIG. 2 is a schematic view showing the installation position of the edge vision acquisition system provided by the present invention.
  • the edge vision acquisition system 1 is mounted in a pre-aligned radial (i.e., wafer radial) position 3 at one side of the wafer tray.
  • the water vapor disk is further processed by the channel 2 opening of the 8-inch wafer edge acquisition.
  • FIG. 3 is a schematic structural view of a mark detecting system for a pre-alignment device for a wafer provided by the present invention.
  • the marker detection system needs to implement three functions: first, it has the function of searching for alignment marks on the surface of the wafer; secondly, it has the function of adjusting the distance from the camera (or lens) to the surface of the wafer to satisfy The requirements for alignment marks on wafer surfaces of different thicknesses are seen; finally, it is also necessary to have a positional deviation capable of detecting the alignment marks on the wafer and the geometric center of the wafer.
  • the mechanical structure of the marker detection system is designed based on these three functions and input constraints.
  • the marker detection system 4 is primarily comprised of three components: a motion component 48, a focus component 47, and a marker acquisition vision component 46.
  • the motion assembly 48 is used to drive the marker acquisition vision component 46 to move radially along the wafer to complete the search for indicia on the wafer surface.
  • the focusing component 47 is used to drive the marker acquisition visual component 46 to move in the vertical Z direction, thereby realizing the focal plane adjustment of the marker detection, so that the image of the acquisition alignment marker is clear.
  • the marker acquisition vision component 46 is used to effect imaging, image acquisition, image transfer, and processing of alignment marks on the wafer.
  • the motion assembly 48 and the focusing assembly 47 employ a high precision motion module, the marker acquisition vision assembly 46 is mounted to the focusing assembly 47, and the focusing assembly 47 is mounted to the motion assembly 48.
  • the marker acquisition vision component 46 includes a point source 44, a lens 42 and an area array CCD camera 40.
  • the total stroke of the moving components is 80mm, and the effective stroke is 75mm.
  • the total stroke of the focusing assembly is 8mm and the required effective stroke is 5mm.
  • FIG. 4 is a schematic view showing a mounting position of a mark detecting system for a pre-alignment device for a wafer provided by the present invention.
  • the marker detection system 4 is mounted radially on the other side of the wafer tray in a pre-aligned manner.
  • Location (as opposed to edge vision acquisition system 1).
  • the wafer stage includes an R-direction (ie, a rotational axis about a vertical Z-direction) motion assembly 5 and an eccentric compensation assembly 6.
  • FIG. 5 is a schematic diagram of a matching acquisition area of an edge vision acquisition system and a marker detection system for a pre-alignment device for a wafer provided by the present invention.
  • FIG. 5 Through the rotation of the R-moving component 5 around the Z-axis with the edge vision acquisition system, the radial motion of the motion component of the marker detection system is linked with the focusing component, and the combination of the CCD line array and the CCD area array Under the same, the alignment mark images on the 8-inch and 12-inch wafers can be clearly collected, and the centering and higher-precision centering function can be realized by image processing.
  • Step 701 First, the edge edge acquisition rough pre-alignment is completed by using the edge vision acquisition system.
  • Step 702 Calculate the notch direction, and calculate the angle of the rotating wafer according to the positional relationship between the notch, the mark, and the alignment mark field of view coordinates.
  • Step 703 The R axis (ie, the axis of rotation in the vertical Z direction) is rotated to rotate the notch to the alignment field of view.
  • Step 704 The motion component searches for the first mark according to the pre-aligned given mark position, and moves radially to the center of the wafer, and the maximum effective stroke is 75 mm.
  • Step 705 The CCD camera captures an image and performs auto focus.
  • Step 706 Determine whether the best focal plane is reached, and if yes, proceed to step 708: the first alignment mark image is acquired by the mark collection visual component, and if not, proceed to step 707: the focus adjustment component moves vertically, and proceeds to step 705 again.
  • Step 709 Confirm whether there is already an alignment mark (in this case, the first alignment mark) in the image collected in step 708, and if found, proceed to step 714: determine whether both alignment marks have been found, if step 709 If no alignment mark is found, proceed to step 710: the R axis rotates clockwise or counterclockwise, each time the maximum rotation angle is 1.5 degrees, and the alignment mark is again collected by the mark acquisition visual component (in this case, the first alignment mark) Image.
  • Step 711 It is determined again whether the alignment mark has been found. If it has been found, the process proceeds to step 714.
  • step 712 the moving component moves +1 mm along the positive and negative limit positions, and then proceeds to step 709 again.
  • step 713 the wafer is rotated 180 degrees around the R axis, and the mark is collected by the mark. The component captures the image of the second alignment mark and returns to step 709.
  • step 715 calculate the positional deviation of the wafer from the workpiece stage based on the coordinates of the first and second alignment marks, and return the R angle value to the pre-pair
  • the quasi-system returns the coordinate values of the first and second alignment marks in the wafer coordinate system (GWCS) to the workpiece stage, wherein the R angle is in the wafer coordinate system, the coordinate origin to the two alignment marks
  • the angle of the line, the GWCS coordinate system is defined as: the origin of the coordinate is at the center of the wafer, the Y axis passes through the center of the trimming/grooving and the center of the wafer, and the X axis passes through the center of the wafer perpendicular to the Y axis.
  • Step 716 Performing a higher precision pre-alignment on the wafer.
  • the alignment mark is searched for in the above step 704, the measured value of the eccentricity of the wafer during the coarse pre-alignment and the theoretical position of the alignment mark in the wafer coordinate system (the position is determined once the mark setting is completed) can be positioned. Align the coordinates of the mark so that the alignment mark can be quickly found.
  • the two marks MARK1 and MARK2 on the wafer are placed symmetrically, so the mark detection system will not need to search the MARK1 and MARK2 step by step along the R axis, as shown in FIG.
  • W1 and W2 respectively represent two marks MARK1 and MARK2 symmetrically distributed on a wafer;
  • N is an alignment mark coordinate The coordinate origin of the system (WCS coordinate system), where the WCS coordinate system is defined by the alignment mark, the midpoint of the line connecting the two marks is the coordinate origin, the Y coordinate axis passes the coordinate origin and is perpendicular to the line, and the wafer is trimmed.
  • the U axis is defined as the line connecting the center of the workpiece stage and the center of the mark detection system.
  • the V axis is defined as a line perpendicular to the U axis and passing through the center of the workpiece stage;
  • W2' is MARK2 about O The position after the 180 degree rotation;
  • the ⁇ (alfa) angle is the rotation angle between the WCS coordinate system and the MSCS coordinate system;
  • P is the marker detection field of view The center of the range; the distance of NO is equal to W1M or MW2'.
  • Y(W1) is the Y coordinate value of the alignment mark W1 in the MSCS coordinate system
  • Y(W2') is the Y coordinate value after the alignment mark W2 is rotated by 180 degrees in the MSCS coordinate system.
  • the value of the ⁇ angle is fed back to the workpiece table system, and the position of the wafer relative to the workpiece table is accurately compensated by the centering component and the orientation component of the workpiece table system, since the workpiece table system is opposite to the wafer Compensation for the position of the workpiece stage is known to those skilled in the art and will not be described herein.
  • the origin O of the WSCS coordinate system is the center of the workpiece stage, and the relationship between the origin N of the WCS coordinate system (ie, the midpoint of the two marked lines) and the center of the wafer can be predetermined (when When the two marks are strictly symmetrically arranged about the center of the wafer, the N point is the center of the wafer; when the two marks are not symmetrically arranged about the center of the wafer, it is easy to calculate the offset between the point N and the center of the wafer.
  • the two alignment marks W1 and W2 on the wafer are not symmetrically placed, but the lines of the two alignment marks W1 and W2 pass through the center of the wafer, and the two alignment marks W1 and W2 are wafer-to-wafer.
  • the length of the connection to the center is inconsistent.
  • the difference from the second embodiment is that after the first alignment mark W1 is found, the mark detecting system needs to rotate in the R-axis direction to find the second alignment mark W2.
  • the fourth embodiment is based on the third embodiment, adding conditions that not only the two alignment marks W1 and W2 on the wafer are not symmetrically placed, but also the wafer has a relatively large eccentricity on the rotating table, that is, the wafer center Not in the center of the turntable, and the eccentricity is large.
  • the mark detection system after the first alignment mark W1 is found, the mark detection system always rotates in the R-axis direction to find the second alignment mark W2. Then it is similar to the second embodiment. The only difference is the alignment mark with the GWCS coordinate system.
  • the measurement position of W2 and the desired position of the alignment mark W2 in the WCS coordinate system are used to position the actual position of the alignment mark W2.
  • the positions of the two alignment marks W1 and W2 on the wafer have different angles, and the lines of the two alignment marks W1 and W2 do not pass through the center of the wafer, while the two alignment marks W1
  • the length of the connection from W2 to the center of the wafer is inconsistent. In fact, this situation is essentially the same as the fourth embodiment, and will not be described here.
  • the relative positional relationship of the MSCS, GWCS, and WCS coordinate systems can be determined, thereby achieving fine alignment by position compensation for coarse alignment.
  • the offset of the wafer on the rotating table is not too different from the marking position, so the fine alignment can be achieved after the second and third embodiments.
  • the fourth and fifth embodiments only Used in rare cases to ensure precise alignment for all wafers.

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  • Engineering & Computer Science (AREA)
  • Computer Vision & Pattern Recognition (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Theoretical Computer Science (AREA)
  • Quality & Reliability (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)

Abstract

一种用于晶圆的预对准装置，包括：一工作台，用于承载所述晶圆，其中所述晶圆上具有大致关于晶圆圆心对称分布的第一对准标记（W1）和第二对准标记（W2）；一边缘视觉采集系统（1），用于根据所述晶圆上的边缘或缺口标记关于工作台的相对位置，实现对所述晶圆的第一次位置补偿；一标记探测系统（4），用于分别获取所述第一和第二对准标记（W1，W2）的像，并根据所述第一（W1）和第二（W2）对准标记在标记探测系统坐标系中的位置，确定所述晶圆圆心预工作台中心之间的相对位置关系，从而实现对所述晶圆的第二次位置补偿，其中标记探测系统（4）坐标系的横轴（X）定义为工作台中心和标记探测系统（4）中心的连线，纵轴（Y）定义为垂直于横轴（X）并通过工作台中心的直线。

Description

用于晶圆的预对准装置及方法 技术领域
本发明涉及集成电路装备制造领域，尤其涉及一种用于晶圆的预对准装置及方法。
背景技术
边缘视觉采集系统主要完成对晶圆边缘(例如平边)与缺口标记的采集，然后经过图像处理与计算，算出晶圆相对于工件台的偏心与偏向，从而使工件台系统的定心组件和定向组件补偿偏移量。由于不同厂家生产的晶圆本身形状与其缺口的形状都有一定的差异，标记的位置相对缺口也是不一定相同的，并且经过不同光刻机预对准之后晶圆的边缘定心定向精度也有差别，所以上片的精度将无法很好地满足前道光刻机的需求。
发明内容
为了克服现有技术中存在的缺陷，本发明公开一种高精度的用于晶圆的预对准装置及方法。
为了实现上述发明目的，本发明提供一种用于晶圆的预对准装置，包括：一工件台，用于承载所述晶圆，其中，所述晶圆上具有大致关于晶圆圆心对称分布的第一对准标记和第二对准标记；一边缘视觉采集系统，用于根据所述晶圆上的边缘或缺口标记关于工件台的相对位置，实现对所述晶圆的第一次位置补偿；一标记探测系统，用于分别获取所述第一和第二对准标记的像，并根据所述第一和第二对准标记在标记探测系统坐标系中的位置，确定所述晶圆圆心与工件台中心之间的相对位置关系，从而实现对所述晶圆的第二次位置补偿，其中，标记探测系统坐标系的横轴定义为工件台中心和标记探测系统中心的连线，纵轴定义为垂直于横轴并通过工件台中心的直线。
更进一步地，所述标记探测系统用于根据所述第一和第二对准标记在标记探测系统坐标系下的坐标计算出对准标记坐标系与标记探测系统坐标系之间的旋转角度及偏置，再根据所述旋转角度及偏置以及对准标记坐标系的原点与晶圆圆心之间的相对位置关系确定所述晶圆圆心与工件台中心之间的相对位置关系，其中，所述对准标记坐标系的横轴定义为所述第一和第二对准标记的连线，原点定义为所述第一和第二对准标记的连线的中点，纵轴经过原点且垂直于所述连线。
更进一步地，所述边缘视觉采集系统包括一线阵CCD探测器，所述标记探测系统包括一面阵CCD探测器。
更进一步地，所述标记探测系统包括一运动组件、一调焦组件以及一标记采集视觉组件，所述运动组件驱动所述标记采集视觉组件搜索所述第一或第二对准标记，所述调焦组件用于调整标记采集视觉组件相对于第一或第二对准标记的焦距，所述标记采集视觉组件用于采集所述第一或第二对准标记的像。
更进一步地，所述调焦组件与所述运动组件相连接，所述标记采集视觉组件与所述调焦组件相连接，所述运动组件用于驱动所述调焦组件沿晶圆的径向移动，所述调焦组件用于驱动所述标记采集视觉组件沿竖直方向移动。
更进一步地，所述标记采集视觉组件包括一点光源、一镜头以及一面阵CCD相机。
更进一步地，所述边缘视觉采集系统和所述标记探测系统分别沿所述晶圆的径向位于所述晶圆的两侧。
本发明还公开一种用于晶圆的预对准方法，包括：步骤一、在晶圆上提供大致关于晶圆圆心对称分布的第一对准标记和第二对准标记；步骤二、由边缘视觉采集系统根据所述晶圆上的边缘或缺口标记关于工件台的相对位置，实现对所述晶圆的第一次位置补偿；步骤三、由标记探测系统分别搜索并采集位于所述晶圆上的第一、第二对准标记的像；步骤四、根据所述第一 和第二对准标记在标记探测系统坐标系中的位置，确定所述晶圆圆心与工件台中心之间的相对位置关系；步骤五、根据所确定的所述晶圆圆心与工件台中心之间的相对位置关系，实现对所述晶圆的第二次位置补偿，其中，标记探测系统坐标系的横轴定义为工件台中心和标记探测系统中心的连线，纵轴定义为垂直于横轴并通过工件台中心的直线。
更进一步地，步骤四包括根据所述第一和第二对准标记在标记探测系统坐标系下的坐标计算出对准标记坐标系与标记探测系统坐标系之间的旋转角度及偏置，再根据所述旋转角度及偏置以及对准标记坐标系的原点与晶圆圆心之间的相对位置关系确定所述晶圆圆心与工件台中心之间的相对位置关系，其中，所述对准标记坐标系的横轴定义为所述第一和第二对准标记的连线，原点定义为所述第一和第二对准标记的连线的中点，纵轴经过原点且垂直于所述连线。
与现有技术相比较，本发明所公开的技术方案在粗预对准(即第一次位置补偿)之后，再通过采集第一、第二对准标记的像，并通过计算，可实现更高精度的晶圆定心、定向功能，更好地满足了高上片精度要求。
附图说明
关于本发明的优点与精神可以通过以下的发明详述及所附示意图得到进一步的了解。
图1是本发明提供的用于晶圆的预对准装置的边缘视觉采集系统的结构示意图；
图2是本发明提供的边缘视觉采集系统的安装位置示意图；
图3是本发明提供的用于晶圆的预对准装置的标记探测系统的结构示意图；
图4是本发明提供的用于晶圆的预对准装置的标记探测系统的安装位置示意图；
图5是本发明提供的用于晶圆的预对准装置的边缘视觉采集系统与标记探测系统的配合采集面域示意图；
图6是本发明提供的用于晶圆的预对准装置的使用场景的示意图；
图7是本发明所涉及的用于晶圆的预对准方法的流程图。
具体实施方式
下面结合附图详细说明本发明的具体实施例。
实施例一
现有技术采集边缘与缺口标记，只能实现粗预对准。而本发明在粗预对准之后，再通过采集双标记实现更高精度的晶圆定心、定向功能，更好地满足了高上片精度要求。
为了使上传到工件台上的晶圆的定心定向精度能够更好地满足上片精度要求，在晶圆经过边缘采集预对准之后再设计用标记探测系统(Mark Sensor System)对晶圆上的对准标记进行标定，以提高上片精度。
标记探测系统能满足三个方面功能，以解决上述问题：一、使传送到工件台上的晶圆上的对准标记能够更准确的位于对准视场内，减小因不同晶圆间对准标记相对晶圆几何外形尺寸位置不同而引起的上片精度误差过大；二、标记探测系统能够作为测试工具，检测晶圆上的对准标记相对于晶圆几何外形的坐标位置偏差。三、标记探测系统通过对比对准标记在标记探测系统坐标系中的希望位置和测量位置，能够计算出对准标记在晶圆坐标系中的位置和相对于标记探测系统坐标系的旋转偏置。
最终通过标记探测系统测得的数据对晶圆作位置补偿，使晶圆按照更高的定心、定向精度要求成功传送到工件台上。
图1是本发明提供的用于晶圆的预对准装置的边缘视觉采集系统的结构示意图。如图1所示的边缘视觉采集系统主要完成对晶圆边缘的采集，然后经过图像处理与计算算出晶圆的偏心与偏向，从而使工件台系统的定心组件 和定向组件补偿偏移量。如图1所示，边缘视觉采集系统1主要由线阵CCD相机10、底座11、光源12、镜头13、支架14以及调整元件15组成，通过调整元件15使镜头13的中心到支架14的内表面间距离L满足8寸与12寸晶圆切换空间要求。图2是本发明提供的边缘视觉采集系统的安装位置示意图。如图2所示，边缘视觉采集系统1沿预对准径向(即晶圆径向)安装在晶圆盘的一侧位置3处。水汽盘上也进一步做8寸晶圆边缘采集的通道2开口处理。
图3是本发明提供的用于晶圆的预对准装置的标记探测系统的结构示意图。如图3中所示，标记探测系统需要实现三个功能：首先，具有搜索晶圆表面上的对准标记的功能；其次，具有调整相机(或镜头)到晶圆表面距离的功能，以满足看清不同厚度晶圆表面的对准标记的要求；最后，还需要具有能够检测晶圆上的对准标记与晶圆几何中心的位置偏差。根据这个三个功能以及输入约束设计标记探测系统的机械结构。
如图3所示，标记探测系统4主要由三部分组成：运动组件48、调焦组件47、标记采集视觉组件46。运动组件48用于带动标记采集视觉组件46沿晶圆径向运动，进而完成对晶圆表面上的标记的搜索。调焦组件47用于带动标记采集视觉组件46在竖直Z向上运动，进而实现对标记探测的焦面调整，使采集对准标记的图像清晰。标记采集视觉组件46用于实现对晶圆上对准标记的成像、图像采集、图像传送以及处理。运动组件48和调焦组件47采用高精度的运动模组，标记采集视觉组件46安装于调焦组件47上，调焦组件47安装于运动组件48上。
标记采集视觉组件46包括点光源44、镜头42以及面阵CCD相机40。为满足兼容处理200mm和300mm晶圆的需求，运动组件的总行程为80mm，需求有效行程75mm。调焦组件的总行程为8mm，需求有效行程为5mm。
图4是本发明提供的用于晶圆的预对准装置的标记探测系统的安装位置示意图。如图4所示，标记探测系统4沿预对准径向安装于晶圆盘的另一侧 位置处(与边缘视觉采集系统1相对)。晶圆台上包括一R向(即绕竖直Z向的旋转轴)运动组件5以及一偏心补偿组件6。
图5是本发明提供的用于晶圆的预对准装置的边缘视觉采集系统与标记探测系统的配合采集面域示意图。通过R向运动组件5绕Z轴的旋转运动与边缘视觉采集系统的配合，在标记探测系统的运动组件的径向运动与调焦组件联动下，以及在CCD线阵与CCD面阵的联合使用下，可清晰地采集8寸与12寸晶圆上的对准标记图像，再通过图像处理实现预对准更高精度的定心定向功能。
实施例二
图7是本发明所涉及的用于晶圆的预对准方法的流程图。如图7所示，所述方法包括以下步骤。步骤701：首先利用该边缘视觉采集系统完成晶圆边缘采集粗预对准。步骤702：计算缺口方向，并根据缺口、标记、对准标记视场坐标之间的位置关系计算出旋转晶圆的角度。步骤703：R轴(即沿垂向Z方向的旋转轴)转动，使缺口旋转到对准视场下。步骤704：运动组件根据预对准给定的标记位置搜索第一个标记，向晶圆中心沿径向运动，最大有效行程为75mm。步骤705：CCD相机采集图像并进行自动调焦。步骤706：判断是否到最佳焦平面，如果是则进入步骤708：由标记采集视觉组件采集第一对准标记图像，如果不是则进入步骤707：调焦组件垂向移动，再次进入步骤705。步骤709：确认步骤708采集到的图像里是否已经存在对准标记(此时为第一对准标记)，若已找到则进入步骤714：判断是否两个对准标记都已找到，若步骤709中没有找到对准标记，则进入步骤710：R轴顺时针或逆时针旋转，每次最大旋转角度为1.5度，由标记采集视觉组件再次采集对准标记(此时为第一对准标记)的图像。步骤711：再次判断是否已经找到对准标记，若已找到则进入步骤714，若步骤711中没有找到对准标记，则进入步骤712：运动组件沿正负限位运动+1mm后再次进入步骤709。如果找到第一标记而没有找到第二标记，则进入步骤713：晶圆绕R轴旋转180度，由标记采集视 觉组件采集第二对准标记的像后返回步骤709。若步骤714中两个对准标记都已找到，则进入步骤715：根据第一和第二对准标记的坐标计算所述晶圆相对于工件台的位置偏差，将R角度值返回给预对准系统，将在晶圆坐标系(GWCS)下第一和第二对准标记的坐标值返回给工件台，其中，R角度为在晶圆坐标系下，坐标原点到两个对准标记连线的夹角，GWCS坐标系的定义为：坐标原点位于晶圆的中心，Y轴通过切边/切槽中心和晶圆中心，X轴垂直于Y轴通过晶圆中心。步骤716：对晶圆进行更高精度的预对准。
在上述步骤704寻找对准标记时，可以通过粗预对准时对晶圆偏心偏向的测量值以及对准标记在晶圆坐标系下的理论位置(一旦标记设置完成即确定了该位置)来定位对准标记的坐标，从而可以快速找到对准标记。
为了充分解释本发明的技术内容，下面将设定一个基础场景，利用该基础场景实现高精度的预对准方式如下：
假设晶圆在旋转台上有一个小偏心，晶圆上的两个标记MARK1和MARK2对称地放置，因此标记探测系统将不需要沿着R轴来逐步搜索MARK1和MARK2，如图6所示。图6是本发明提供的用于晶圆的预对准装置的使用场景的示意图，其中，W1和W2分别表示在晶圆上对称地分布的两个标记MARK1和MARK2；N是对准标记坐标系(WCS坐标系)下的坐标原点，其中，WCS坐标系由对准标记定义，两个标记的连线中点为坐标原点，Y坐标轴经过坐标原点且垂直于连线，晶圆切边/切槽端为-Y方向，两个标记的连线为X坐标轴(水平方向)；两个标记MARK1和MARK2的半径相等，即W1N＝W2N；O是MSCS坐标系下的坐标中心，其中，MSCS坐标系为标记探测系统坐标系，U轴定义为工件台的中心和标记探测系统中心的连线，V轴定义为垂直于U轴并通过工件台中心的直线；W2'是MARK2关于O点经过180度旋转后的位置；M是W1W2'的中心；容易得出MO＝W1N＝W2N；α(alfa)角是WCS坐标系和MSCS坐标系之间的旋转角度；P是标记探测视场范围的中心；NO的距离与W1M或MW2'相等。
由此可以推导出：
Figure PCTCN2016079979-appb-000001
其中，Y(W1)为对准标记W1在MSCS坐标系中的Y坐标值；
Y(W2')为对准标记W2在MSCS坐标系中180度旋转后的Y坐标值。
求出旋转角度α后，把α角的值反馈给工件台系统，通过工件台系统的定心组件和定向组件对晶圆相对于工件台的位置进行精确补偿，由于工件台系统对晶圆相对于工件台地位置进行补偿为本领域技术人员已知技术，在此不再赘述。
此处容易理解的是，WSCS坐标系的原点O就是工件台的中心，而WCS坐标系的原点N(即两个标记连线的中点)与晶圆中心的关系是可以预先确定的(当两个标记关于晶圆中心严格对称布置时，N点即为晶圆中心；当两个标记关于晶圆中心并非对称布置时，也很容易计算出N点与晶圆中心之间的偏移量)，因此，当确定了O点相对于N点的位置关系时，将很容易得出O点相对于晶圆中心的位置关系，也就能够通过工件台系统的调整，使晶圆中心移动至工件台的中心。
实施例三
在该实施例中，晶圆上的两个对准标记W1和W2不是对称放置，但是两个对准标记W1和W2的连线经过晶圆中心，两个对准标记W1和W2到晶圆中心的连线长度不一致。与实施例二的区别是找到第一个对准标记W1之后，标记探测系统需要沿着R轴方向旋转寻找第二个对准标记W2。
实施例四
实施例四是在实施例三基础上，增加条件，即：不仅晶圆上的两个对准标记W1和W2不是对称放置，而且晶圆在旋转台上有比较大的偏心，即晶圆中心不在旋转台中心，而且偏心较大。与实施例三相比，找到第一个对准标记W1后，标记探测系统总是沿着R轴方向旋转运动来寻找第二个对准标记W2。然后就与实施例二类似了，唯一的区别就是用GWCS坐标系的对准标记 W2的测量位置和WCS坐标系下对准标记W2的期望位置来定位对准标记W2的实际位置。
实施例五
在该实施例中，晶圆上的两个对准标记W1和W2的位置存在不同的角度，并且两个对准标记W1和W2的连线不经过晶圆中心，同时两个对准标记W1和W2到晶圆中心的连线长度不一致。其实，这种情况和实施例四本质上没有区别，在此不再赘述。
通过上述实施方式就可以确定MSCS、GWCS、WCS坐标系的相对位置关系，从而通过对粗对准的位置补偿实现精对准。
一般来说粗对准之后晶圆在旋转台上的偏移量与标记位置差异不会太大，所以经过第二与第三实施例之后就能实现精对准，第四、五实施例只在极少数情况下利用到，以确保对所有的晶圆都能实现精对准。
本说明书中所述的只是本发明的较佳具体实施例，以上实施例仅用以说明本发明的技术方案而非对本发明的限制。凡本领域技术人员依本发明的构思通过逻辑分析、推理或者有限的实验可以得到的技术方案，皆应在本发明的范围之内。

Claims (9)

  1. 一种用于晶圆的预对准装置，其特征在于，包括：
    一工件台，用于承载所述晶圆，其中，所述晶圆上具有大致关于晶圆圆心对称分布的第一对准标记和第二对准标记；
    一边缘视觉采集系统，用于根据所述晶圆上的边缘或缺口标记关于工件台的相对位置，实现对所述晶圆的第一次位置补偿；
    一标记探测系统，用于分别获取所述第一和第二对准标记的像，并根据所述第一和第二对准标记在标记探测系统坐标系中的位置，确定所述晶圆圆心与工件台中心之间的相对位置关系，从而实现对所述晶圆的第二次位置补偿，
    其中，标记探测系统坐标系的横轴定义为工件台中心和标记探测系统中心的连线，纵轴定义为垂直于横轴并通过工件台中心的直线。
  2. 如权利要求1所述的用于晶圆的预对准装置，其特征在于，所述标记探测系统用于根据所述第一和第二对准标记在标记探测系统坐标系下的坐标计算出对准标记坐标系与标记探测系统坐标系之间的旋转角度及偏置，再根据所述旋转角度及偏置以及对准标记坐标系的原点与晶圆圆心之间的相对位置关系确定所述晶圆圆心与工件台中心之间的相对位置关系，其中，所述对准标记坐标系的横轴定义为所述第一和第二对准标记的连线，原点定义为所述第一和第二对准标记的连线的中点，纵轴经过原点且垂直于所述连线。
  3. 如权利要求1所述的用于晶圆的预对准装置，其特征在于，所述边缘视觉采集系统包括一线阵CCD探测器，所述标记探测系统包括一面阵CCD探测器。
  4. 如权利要求1所述的用于晶圆的预对准装置，其特征在于，所述标记探测系统包括一运动组件、一调焦组件以及一标记采集视觉组件，所述运动组件驱动所述标记采集视觉组件搜索所述第一或第二对准标记，所述调焦组 件用于调整标记采集视觉组件相对于第一或第二对准标记的焦距，所述标记采集视觉组件用于采集所述第一或第二对准标记的像。
  5. 如权利要求4所述的用于晶圆的预对准装置，其特征在于，所述调焦组件与所述运动组件相连接，所述标记采集视觉组件与所述调焦组件相连接，所述运动组件用于驱动所述调焦组件沿晶圆的径向移动，所述调焦组件用于驱动所述标记采集视觉组件沿竖直方向移动。
  6. 如权利要求4所述的用于晶圆的预对准装置，其特征在于，所述标记采集视觉组件包括一点光源、一镜头以及一面阵CCD相机。
  7. 如权利要求1所述的用于晶圆的预对准装置，其特征在于，所述边缘视觉采集系统和所述标记探测系统分别沿所述晶圆的径向位于所述晶圆的两侧。
  8. 一种用于晶圆的预对准方法，其特征在于，包括：
    步骤一、在晶圆上提供大致关于晶圆圆心对称分布的第一对准标记和第二对准标记；
    步骤二、由边缘视觉采集系统根据所述晶圆上的边缘或缺口标记关于工件台的相对位置，实现对所述晶圆的第一次位置补偿；
    步骤三、由标记探测系统分别搜索并采集位于所述晶圆上的第一、第二对准标记的像；
    步骤四、根据所述第一和第二对准标记在标记探测系统坐标系中的位置，确定所述晶圆圆心与工件台中心之间的相对位置关系；
    步骤五、根据所确定的所述晶圆圆心与工件台中心之间的相对位置关系，实现对所述晶圆的第二次位置补偿,
    其中，标记探测系统坐标系的横轴定义为工件台中心和标记探测系统中心的连线，纵轴定义为垂直于横轴并通过工件台中心的直线。
  9. 如权利要求8所述的用于晶圆的预对准方法，其特征在于，步骤四包括根据所述第一和第二对准标记在标记探测系统坐标系下的坐标计算出对准 标记坐标系与标记探测系统坐标系之间的旋转角度及偏置，再根据所述旋转角度及偏置以及对准标记坐标系的原点与晶圆圆心之间的相对位置关系确定所述晶圆圆心与工件台中心之间的相对位置关系，其中，所述对准标记坐标系的横轴定义为所述第一和第二对准标记的连线，原点定义为所述第一和第二对准标记的连线的中点，纵轴经过原点且垂直于所述连线。
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