WO2016180262A1 - Mems麦克风 - Google Patents

Mems麦克风 Download PDF

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Publication number
WO2016180262A1
WO2016180262A1 PCT/CN2016/081062 CN2016081062W WO2016180262A1 WO 2016180262 A1 WO2016180262 A1 WO 2016180262A1 CN 2016081062 W CN2016081062 W CN 2016081062W WO 2016180262 A1 WO2016180262 A1 WO 2016180262A1
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WIPO (PCT)
Prior art keywords
mems microphone
lower plate
support portion
plate
upper plate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/CN2016/081062
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English (en)
French (fr)
Inventor
胡永刚
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
CSMC Technologies Fab1 Co Ltd
CSMC Technologies Fab2 Co Ltd
Original Assignee
CSMC Technologies Fab1 Co Ltd
CSMC Technologies Fab2 Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by CSMC Technologies Fab1 Co Ltd, CSMC Technologies Fab2 Co Ltd filed Critical CSMC Technologies Fab1 Co Ltd
Priority to EP16792112.1A priority Critical patent/EP3297294A4/en
Priority to US15/573,235 priority patent/US10349185B2/en
Publication of WO2016180262A1 publication Critical patent/WO2016180262A1/zh
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04R—LOUDSPEAKERS, MICROPHONES, GRAMOPHONE PICK-UPS OR LIKE ACOUSTIC ELECTROMECHANICAL TRANSDUCERS; ELECTRIC HEARING AIDS; PUBLIC ADDRESS SYSTEMS
    • H04R19/00—Electrostatic transducers
    • H04R19/04—Microphones
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04R—LOUDSPEAKERS, MICROPHONES, GRAMOPHONE PICK-UPS OR LIKE ACOUSTIC ELECTROMECHANICAL TRANSDUCERS; ELECTRIC HEARING AIDS; PUBLIC ADDRESS SYSTEMS
    • H04R19/00—Electrostatic transducers
    • H04R19/005—Electrostatic transducers using semiconductor materials
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
    • B81B3/00—Devices comprising flexible or deformable elements, e.g. comprising elastic tongues or membranes
    • B81B3/0064—Constitution or structural means for improving or controlling the physical properties of a device
    • B81B3/0086—Electrical characteristics, e.g. reducing driving voltage, improving resistance to peak voltage
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04R—LOUDSPEAKERS, MICROPHONES, GRAMOPHONE PICK-UPS OR LIKE ACOUSTIC ELECTROMECHANICAL TRANSDUCERS; ELECTRIC HEARING AIDS; PUBLIC ADDRESS SYSTEMS
    • H04R7/00—Diaphragms for electromechanical transducers; Cones
    • H04R7/02—Diaphragms for electromechanical transducers; Cones characterised by the construction
    • H04R7/04—Plane diaphragms
    • H04R7/06—Plane diaphragms comprising a plurality of sections or layers
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04R—LOUDSPEAKERS, MICROPHONES, GRAMOPHONE PICK-UPS OR LIKE ACOUSTIC ELECTROMECHANICAL TRANSDUCERS; ELECTRIC HEARING AIDS; PUBLIC ADDRESS SYSTEMS
    • H04R7/00—Diaphragms for electromechanical transducers; Cones
    • H04R7/02—Diaphragms for electromechanical transducers; Cones characterised by the construction
    • H04R7/04—Plane diaphragms
    • H04R7/06—Plane diaphragms comprising a plurality of sections or layers
    • H04R7/10—Plane diaphragms comprising a plurality of sections or layers comprising superposed layers in contact
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
    • B81B2201/00—Specific applications of microelectromechanical systems
    • B81B2201/02—Sensors
    • B81B2201/0257—Microphones or microspeakers
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
    • B81B2203/00—Basic microelectromechanical structures
    • B81B2203/01—Suspended structures, i.e. structures allowing a movement
    • B81B2203/0127—Diaphragms, i.e. structures separating two media that can control the passage from one medium to another; Membranes, i.e. diaphragms with filtering function
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
    • B81B2203/00—Basic microelectromechanical structures
    • B81B2203/03—Static structures
    • B81B2203/0315—Cavities
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
    • B81B2203/00—Basic microelectromechanical structures
    • B81B2203/04—Electrodes
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04R—LOUDSPEAKERS, MICROPHONES, GRAMOPHONE PICK-UPS OR LIKE ACOUSTIC ELECTROMECHANICAL TRANSDUCERS; ELECTRIC HEARING AIDS; PUBLIC ADDRESS SYSTEMS
    • H04R2201/00—Details of transducers, loudspeakers or microphones covered by H04R1/00 but not provided for in any of its subgroups
    • H04R2201/003—Mems transducers or their use
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04R—LOUDSPEAKERS, MICROPHONES, GRAMOPHONE PICK-UPS OR LIKE ACOUSTIC ELECTROMECHANICAL TRANSDUCERS; ELECTRIC HEARING AIDS; PUBLIC ADDRESS SYSTEMS
    • H04R7/00—Diaphragms for electromechanical transducers; Cones
    • H04R7/16—Mounting or tensioning of diaphragms or cones
    • H04R7/18—Mounting or tensioning of diaphragms or cones at the periphery

Definitions

  • the present invention relates to the field of semiconductor device technologies, and in particular, to a MEMS microphone.
  • Capacitive MEMS microphone chips are currently available in piezoresistive, piezoelectric and capacitive types, of which capacitive MEMS microphones are the most widely used. Capacitive MEMS microphones have the following advantages: small size, high sensitivity, good frequency characteristics, low noise, and wide operating temperature range.
  • Capacitive MEMS microphones typically consist of a backplate and a diaphragm.
  • the diaphragm has a certain flexibility, and the diaphragm can be vibrated by air; and the back plate has a certain rigidity and is filled with holes, also called sound holes. Air can pass through these sound holes, causing the diaphragm to vibrate, and the back plate does not vibrate with the vibration of the air.
  • the back plate and the diaphragm form a flat-plate capacitor, and the sound vibrates through the air to vibrate the flexible diaphragm, thereby changing the capacitance of the plate capacitor. This change in capacitance provides an electrical signal that can be detected by the peripheral circuitry, thereby enabling the conversion from a sound signal to an electrical signal.
  • Sensitivity is an important indicator of a capacitive MEMS microphone.
  • the size of the diaphragm, the size of the deformation, and the shape of the deformation determine the sensitivity of the silicon-based microphone. At present, if other design structures are unchanged, if you want to reduce the chip area, it will inevitably reduce the sensitivity of the capacitive MEMS microphone.
  • a MEMS microphone includes a substrate, a support portion, an overlying layer, an upper plate and a lower plate, the substrate is provided with an opening extending through the middle, the lower plate is spanned across the opening, and the support portion is fixed to On the lower plate, the upper plate is attached to the support portion, and a cavity is formed between the support portion, the upper plate and the lower plate, and the superposed layer is attached to the An intermediate portion of the upper plate or the lower plate, the upper plate and the lower plate being insulated from each other.
  • the above MEMS microphone includes an overlying layer, and the superimposed layer is attached to the intermediate portion of the upper or lower plate used as the diaphragm, which is equivalent to increasing the thickness in the middle of the diaphragm, and can effectively limit the deformation of the central portion of the diaphragm.
  • the middle area of the diaphragm appears flatter than the conventional structure microphone; in the case where the diaphragm moves at the same distance, the capacitor structure in the middle of the diaphragm is obviously larger in capacitance. That is, the capacitance changes more, which makes it more sensitive.
  • FIG. 1 is a top plan view of a MEMS microphone of one of the embodiments
  • Figure 2 is a cross-sectional view taken along line A-A' of Figure 1;
  • FIG. 3 is a top plan view of a MEMS microphone of another embodiment
  • Figure 4 is a cross-sectional view taken along line A-A' of Figure 3;
  • FIG. 5A is a simplified structural diagram of a conventional MEMS microphone when vibrating
  • Fig. 5B is a simplified structural view of the MEMS microphone with the superimposed layer vibrated.
  • FIG. 1 is a plan view of a MEMS microphone of one embodiment
  • FIG. 2 is a cross-sectional view taken along line A-A' of FIG. 1.
  • a MEMS microphone includes a substrate 100, a support portion 200, an upper plate 300, a lower plate 400, and an overlay 600.
  • the material of the substrate 100 is Si in this embodiment, and may also be other semiconductor or semiconductor compounds, such as Ge, SiGe, SiC, SiO2. Or one of Si3N4.
  • a second insulating layer may also be disposed on the substrate, and the lower plate 400 is connected across the second insulating layer, and the second insulating layer functions to insulate the substrate 100 and the lower plate 400 from each other.
  • the base 100 is provided with an opening 120 extending through the middle, the lower plate 400 is spanned over the opening 120, the support portion 200 is fixed to the lower plate 400, and the upper plate 300 is attached to the support portion 200.
  • the support portion 200 and the upper plate 300 are provided.
  • a cavity 500 is formed between the upper plate 300 and the lower plate 400, and the upper plate 300 and the lower plate 400 are insulated from each other.
  • the material of the superposed layer 600 may be at least one of polysilicon, silicon nitride, Alpha silicon, and a metal such as Al, W, and Ti. Of course, it may be the same as the material of the upper plate 300 or the lower plate 400 to be attached, or may be integrally formed.
  • the thickness of the superposed layer 600 may also be equivalent to the thickness of the attached upper or lower plate 300 or 400, in order to increase the thickness of the diaphragm.
  • the shape of the superimposed layer 600 is circular in this embodiment, and may be elliptical or polygonal in other embodiments, such as a square, a regular hexagon, a regular octagon, etc., and may also be an irregular pattern.
  • the overlying layer 600 is attached to one side of the upper plate 300 opposite the cavity 500, at which time the upper plate 300 acts as a diaphragm and the lower plate 400 acts as a back plate.
  • the overlay 600 can also be attached to one side of the upper plate 300 that faces away from the cavity 500.
  • Fig. 3 is a plan view of another embodiment of a MEMS microphone
  • Fig. 4 is a side cross-sectional view taken along line A-A' of Fig. 3.
  • the superimposed layer 600 is attached to one side of the lower plate 400 facing the cavity 500, at which time the upper plate 300 serves as a back plate and the lower plate 400 serves as a diaphragm.
  • the overlay 600 can also be attached to one side of the lower plate 400 that faces away from the cavity 500.
  • the upper plate 300 when the upper plate 300 serves as a diaphragm and the lower plate 400 serves as a back plate, the upper plate 300 is a flexible film, and the lower plate 400 is a rigid film; see FIGS. 3 and 4, When the upper plate 300 is used as the back plate and the lower plate 400 is used as the diaphragm, the upper plate 300 is a rigid film, and the lower plate 400 is a flexible film.
  • the rigid film is not easily deformed by the vibration of the sound wave, and the flexible film is easily deformed by the vibration of the sound wave.
  • a plurality of uniformly distributed sound holes 700 are provided as the upper plate 300 or the lower plate 400 of the diaphragm.
  • the sound holes 700 may also be non-uniformly distributed.
  • the sound holes 700 are concentrated in the middle portion of the upper plate 300 or the lower plate 400.
  • the material of the flexible film includes Si, Ge, SiGe, SiC, or Al, W, Ti, or one of nitrides of Al, W, and Ti.
  • the upper plate 300 and the lower plate 400 include a conductive layer, and the upper plate 300 and the lower plate 400 may be a structure of a conductive material as a whole or a composite layer structure including a conductive layer.
  • a cavity 500 is formed between the support portion 200, the upper plate 300 and the lower plate 400.
  • the cavity 500 is actually released by the sacrificial layer. During the release process, the sacrificial layer is etched away to form a cavity ( Volume 500).
  • the support portion 200 includes a first insulating layer 220, and the presence of the first insulating layer 220 insulates the upper plate 300 and the lower plate 400 from each other.
  • the support portion 200 may have a structure in which the entirety is an insulating material, or may be a composite layer structure including an insulating layer.
  • the support portion 200 has a square-shaped structure with a through opening 280 in the middle, and the opening 280 of the support portion 200 is slightly larger than the opening 120 of the substrate 100, as shown in FIGS. 1 and 3.
  • the support portion 200 includes a support column 240 that is independent of the frame-shaped structure body of the support portion 200.
  • the support column 240 is mainly used for the upper electrode 800.
  • the spacing 260 functions to isolate the electrode 800 from the square-shaped structural body of the support portion 200, so that the electrode 800 is isolated from the large-area upper plate 300 on the square-shaped structural body of the support portion 200. Reduce the effects of parasitic capacitance.
  • the support portion 200 is further provided with a notch 250 for exposing the lower plate 400 under the support portion 200 to manufacture the lower electrode 900.
  • the notch 250 is a through-hole structure in this embodiment, and may be a notch on the side of the support portion 200 in other embodiments.
  • the main body of the support portion 200 may also be other multi-frame-shaped structures, such as a regular hexagonal frame structure, a regular octagonal frame structure, or a circular ring structure.
  • the MEMS microphone further includes an upper electrode 800 and a lower electrode 900.
  • the material of the upper electrode 800 and the lower electrode 900 includes P-type silicon (for example, silicon doped with boron impurities) or N-type silicon (for example, silicon doped with phosphorus impurities).
  • P-type silicon for example, silicon doped with boron impurities
  • N-type silicon for example, silicon doped with phosphorus impurities.
  • the upper electrode 800 is electrically connected to the upper plate 300 on the upper plate 300 on the support post 240
  • the lower electrode 900 is located in the notch 250 on the support portion 200 and electrically connected to the lower plate 400.
  • the substrate 100 is a support structure that provides support and does not necessarily mean that the substrate 100 is a separate component.
  • the substrate 100 may be represented as a multilayer structure, and the multilayer structure may be formed by a process such as epitaxy, deposition, or bonding.
  • the above MEMS microphone includes an overlying layer, and the superimposed layer is attached to the intermediate portion of the upper or lower plate used as the diaphragm, which is equivalent to increasing the thickness in the middle of the diaphragm, and can effectively limit the deformation of the central portion of the diaphragm.
  • 5A and 5B are simple structural diagrams of a conventional MEMS microphone and a MEMS microphone with an overlay layer respectively.

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Acoustics & Sound (AREA)
  • Signal Processing (AREA)
  • Multimedia (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Electrostatic, Electromagnetic, Magneto- Strictive, And Variable-Resistance Transducers (AREA)
  • Pressure Sensors (AREA)

Abstract

一种MEMS麦克风，包括：基底（100）、支撑部（200）、叠加层（600）、上极板（300）和下极板（400），所述基底（100）设有贯通中间的开口（120），所述下极板（400）跨设于所述基底（100）上方，所述支撑部（200）固定于所述下极板（400）上，所述上极板（300）贴于所述支撑部（200）上，所述支撑部（200）、所述上极板（300）和所述下极板（400）之间形成容腔（500），所述叠加层（600）贴于所述上极板（300）或下极板（400）的中间区域，所述上极板（300）和所述下极板（400）之间绝缘。

Description

MEMS麦克风
【技术领域】
本发明涉及半导体器件技术领域，特别涉及一种MEMS麦克风。
【背景技术】
MEMS麦克风芯片目前有压阻式、压电式和电容式等，其中电容式的MEMS麦克风应用最为广泛。电容式MEMS麦克风拥有以下优点：体积小、灵敏度高、频率特性好、噪声低、工作温度范围宽等。
电容式MEMS麦克风通常由背板和振膜组成。其中振膜具有一定柔韧性，可通过空气使振膜振动；而背板具有一定刚性，并且布满孔洞，也称为声孔。空气可穿过这些声孔，使振膜振动，背板不随空气的振动而振动。背板和振膜构成了一个平板电容，声音通过空气使柔韧的振膜振动，从而使平板电容的电容值发生变化。这种电容值的变化为外围电路提供了一种可供探测的电信号，从而实现了从声音信号到电信号的转换。灵敏度是衡量电容式MEMS麦克风的一项重要指标。振膜尺寸、形变的大小以及形变的形状决定了硅基麦克风的灵敏度大小。目前在其他设计结构不变的情况下，如果想缩小芯片面积，就必然会降低电容式MEMS麦克风的灵敏度。
【发明内容】
基于此，有必要提供一种在不缩小芯片面积的情况下提高灵敏度的电容式MEMS麦克风。
一种MEMS麦克风，包括基底、支撑部、叠加层、上极板和下极板，所述基底设有贯通中间的开口，所述下极板跨设于所述开口，所述支撑部固定于所述下极板上，所述上极板贴于所述支撑部上，所述支撑部、所述上极板和所述下极板之间形成容腔，所述叠加层贴于所述上极板或下极板的中间区域，所述上极板和所述下极板之间绝缘。
上述MEMS麦克风，包括叠加层，叠加层贴于用做振膜的上极板或下极板的中间区域，相当于增加了振膜中间的厚度，可以有效限制振膜中心区域的变形。当振膜发生振动而移动时，与传统结构麦克风相比，振膜的中间区域显得更为平整；在振膜移动相同距离的情况下，振膜中间区域较为平整的电容结构显然电容较大，即电容的变化量更大，从而使其灵敏度更高。
【附图说明】
图1是其中一实施例的MEMS麦克风的俯视图；
图2是沿图1中A-A’线的剖视图；
图3是另一实施例的MEMS麦克风的俯视图；
图4是沿图3中A-A’线的剖视图；
图5A是传统MEMS麦克风振动时的简单结构图；
图5B是具备叠加层的MEMS麦克风振动时的简单结构图。
【具体实施方式】
为了便于理解本发明，下面将参照相关附图对本发明进行更全面的描述。附图中给出了本发明的较佳实施例。但是，本发明可以以许多不同的形式来实现，并不限于本文所描述的实施例。相反地，提供这些实施例的目的是使对本发明的公开内容的理解更加透彻全面。
除非另有定义，本文所使用的所有的技术和科学术语与属于本发明的技术领域的技术人员通常理解的含义相同。本文中在本发明的说明书中所使用的术语只是为了描述具体的实施例的目的，不是旨在限制本发明。本文所使用的术语“和／或”包括一个或多个相关的所列项目的任意的和所有的组合。
下面结合附图，对本发明的具体实施方式进行详细描述。
图1是其中一实施例的MEMS麦克风的俯视图，图2是沿图1中A-A’线的剖视图。
一种MEMS麦克风，包括基底100、支撑部200、上极板300、下极板400、叠加层600。基底100的材料在本实施例中为Si，还可以为其他半导体或半导体的化合物，例如Ge、SiGe、SiC、SiO2 或Si3N4中的一种。基底上还可以设有第二绝缘层，下极板400跨接于第二绝缘层上，第二绝缘层的作用在于使基底100和下极板400相互绝缘。
基底100设有贯通中间的开口120，下极板400跨设于开口120，支撑部200固定于下极板400上，上极板300贴于支撑部200上，支撑部200、上极板300和下极板400之间形成容腔500，叠加层600贴于上极板300或下极板400的中间区域，上极板300和下极板400之间绝缘。
叠加层600的材质可以为多晶硅、氮化硅、Alpha硅和金属（例如Al、W、Ti）中的至少一种。当然也可以与所贴的上极板300或下极板400的材料相同，甚至可以是一体形成。叠加层600的厚度也可以与所贴的上极板300或下极板400的厚度相当，目的在于增加振膜的厚度。叠加层600的形状在本实施例中为圆形，在其他实施例中还可以是椭圆形或多边形，例如方形、正六边形、正八边形等，还可以是不规则图形。
在图1和图2显示的实施例中，叠加层600贴于上极板300对向容腔500的一面上，此时上极板300作为振膜，下极板400作为背板。在一些实施例中，叠加层600还可以贴于上极板300背向容腔500的一面上。
图3是另一实施例MEMS麦克风的俯视图，图4是沿图3中A-A’线的侧面剖视图。在图3和图4显示的实施例中，叠加层600贴于下极板400面向容腔500的一面上，此时上极板300作为背板，下极板400作为振膜。在一些实施例中，叠加层600还可以贴于下极板400背向容腔500的一面上。
见图1和图2，当上极板300作为振膜而下极板400作为背板时，上极板300为柔韧性薄膜，下极板400为坚硬性薄膜；见图3和图4，当上极板300作为背板而下极板400作为振膜时，上极板300为坚硬性薄膜，下极板400为柔韧性薄膜。坚硬性薄膜不容易受到声波振动而形变，柔韧性薄膜容易受到声波振动而形变。作为振膜的上极板300或下极板400，设有多个均匀分布的声孔700。当然声孔700也可以非均匀分布，例如声孔700在上极板300或下极板400的中间区域较为集中。柔韧性薄膜的材质包括Si、Ge、SiGe、SiC，或者Al、W、Ti，或者Al、W、Ti的氮化物中的一种。上极板300和下极板400包含导电层，上极板300和下极板400可以是整体都是导电材质的结构，也可以是包含了导电层的复合层结构。
支撑部200、上极板300和下极板400之间形成容腔500，容腔500实际上是由牺牲层经过释放而来的，在释放过程中，牺牲层被腐蚀掉，形成空腔（容腔500）。
支撑部200包含了第一绝缘层220，第一绝缘层220的存在使得上极板300和下极板400之间相互绝缘。支撑部200可以是整体都是绝缘材质的结构，也可以是包含了绝缘层的复合层结构。在本实施例中支撑部200为方框形结构，中间设有贯通的开口280，支撑部200的开口280比基底100的开口120略大，见图1和图3。支撑部200包括了一个独立于支撑部200方框形结构主体的支撑柱240，支撑柱240与方框形结构主体之间存在间隔260（空隙），支撑柱240主要用于设置上电极800，而间隔260的作用则是使电极800与支撑部200的方框形结构主体有所隔离，从而使得电极800与支撑部200的方框形结构主体上大面积的上极板300有所隔离，降低寄生电容的影响。支撑部200上还设有缺口250，用于暴露支撑部200下的下极板400以制造下电极900。缺口250在本实施例中为通孔结构，在其他实施例中还可以是在支撑部200边上的缺口。
在其他实施例中，支撑部200主体还可以是其他多边框形结构，例如正六边形框形结构、正八边形框形结构，或者是圆环形结构。
MEMS麦克风还包括上电极800和下电极900，上电极800和下电极900的材质包括P型硅（例如掺杂有硼杂质的硅）或N型硅（例如掺杂有磷杂质的硅）中的一种。上电极800位于支撑柱240上的上极板300上和上极板300电连接，下电极900位于支撑部200上的缺口250中，并与下极板400电连接。
最后需要说明的是，基底100是表示一种提供支撑的支撑结构，并不一定表示基底100是一个单独的构件。基底100可以表示为多层结构，其多层结构可以是通过外延、淀积或键合等工艺形成。
可以理解，图1~图4中的图示是对MEMS麦克风的一些主要结构的简单示例，并不代表器件的全部结构。
上述MEMS麦克风，包括叠加层，叠加层贴于用做振膜的上极板或下极板的中间区域，相当于增加了振膜中间的厚度，可以有效限制振膜中心区域的变形。图5A、5B分别是传统MEMS麦克风和具备叠加层的MEMS麦克风振动时的简单结构图，对比两图可以看出，当振膜发生振动而移动时，与传统结构麦克风相比，振膜的中间区域显得更为平整；在振膜移动相同距离的情况下，振膜中间区域较为平整的电容结构显然电容较大，即电容的变化量更大，从而使灵敏度更高。
以上所述实施例仅表达了本发明的几种实施方式，其描述较为具体和详细，但并不能因此而理解为对本发明专利范围的限制。应当指出的是，对于本领域的普通技术人员来说，在不脱离本发明构思的前提下，还可以做出若干变形和改进，这些都属于本发明的保护范围。因此，本发明专利的保护范围应以所附权利要求为准。

Claims (16)

  1. 一种MEMS麦克风，其特征在于，包括：基底、支撑部、叠加层、上极板和下极板，所述基底设有贯通中间的开口，所述下极板跨设于所述基底上方，所述支撑部固定于所述下极板上，所述上极板贴于所述支撑部上，所述支撑部、所述上极板和所述下极板之间形成容腔，所述叠加层贴于所述上极板或下极板的中间区域，所述上极板和所述下极板之间绝缘。
  2. 根据权利要求1 所述的MEMS麦克风，其特征在于，所述上极板为柔韧性薄膜，所述下极板为坚硬性薄膜，所述叠加层贴于所述上极板的中间区域。
  3. 根据权利要求1 所述的MEMS麦克风，其特征在于，所述上极板为坚硬性薄膜，所述下极板为柔韧性薄膜，所述叠加层贴于所述下极板的中间区域。
  4. 根据权利要求1所述的MEMS麦克风，其特征在于，所述叠加层贴于所述上极板面向或背向所述容腔的一面上。
  5. 根据权利要求1所述的MEMS麦克风，其特征在于，所述叠加层贴于所述下极板面向或背向所述容腔的一面上。
  6. 根据权利要求1 所述的MEMS麦克风，其特征在于，所述叠加层的材质为多晶硅、氮化硅、Alpha硅和金属中的至少一种。
  7. 根据权利要求1所述的MEMS麦克风，其特征在于，所述叠加层的形状为圆形、椭圆形、多边形中的一种。
  8. 根据权利要求1所述的MEMS麦克风，其特征在于，所述上极板或下极板设有多个声孔。
  9. 根据权利要求1所述的MEMS麦克风，其特征在于，所述上极板和所述下极板均包含导电层。
  10. 根据权利要求1 所述的MEMS麦克风，其特征在于，所述支撑部包含用于使所述上极板和所述下极板之间绝缘的第一绝缘层。
  11. 根据权利要求1 所述的MEMS麦克风，其特征在于，所述支撑部的主体形状为环形和多边框形中的一种。
  12. 根据权利要求1 所述的MEMS麦克风，其特征在于，所述支撑部包括独立于支撑部主体的支撑柱。
  13. 根据权利要求1所述的MEMS麦克风，其特征在于，还包括上电极和下电极，所述上电极和所述下电极的材质为P型硅或N型硅中的一种，所述上电极和所述上极板电连接，所述下电极和所述下极板电连接。
  14. 根据权利要求13所述的MEMS麦克风，其特征在于，所述支撑部上还设有缺口，用于暴露所述支撑部下的所述下极板，以制造所述下电极。
  15. 根据权利要求1所述的MEMS麦克风，其特征在于，所述基底上还设有第二绝缘层，所述下极板跨接于第二绝缘层上，用于使所述基底和所述下极板相互绝缘。
  16. 根据权利要求1所述的MEMS麦克风，其特征在于，所述基底的材料为半导体。
PCT/CN2016/081062 2015-05-13 2016-05-05 Mems麦克风 Ceased WO2016180262A1 (zh)

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