WO2017004958A1 - 一种局部背接触太阳能电池的制备方法 - Google Patents

一种局部背接触太阳能电池的制备方法 Download PDF

Info

Publication number
WO2017004958A1
WO2017004958A1 PCT/CN2015/100097 CN2015100097W WO2017004958A1 WO 2017004958 A1 WO2017004958 A1 WO 2017004958A1 CN 2015100097 W CN2015100097 W CN 2015100097W WO 2017004958 A1 WO2017004958 A1 WO 2017004958A1
Authority
WO
WIPO (PCT)
Prior art keywords
solution
silicon wafer
preparation
metal
suede
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/CN2015/100097
Other languages
English (en)
French (fr)
Inventor
邹帅
龙维绪
王栩生
邢国强
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
CSI Cells Co Ltd
Original Assignee
CSI Cells Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by CSI Cells Co Ltd filed Critical CSI Cells Co Ltd
Priority to US15/514,287 priority Critical patent/US9966484B2/en
Priority to EP15897606.8A priority patent/EP3321979B1/en
Priority to CN201580083085.7A priority patent/CN108292691A/zh
Priority to JP2018520006A priority patent/JP6666438B2/ja
Publication of WO2017004958A1 publication Critical patent/WO2017004958A1/zh
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F10/00—Individual photovoltaic cells, e.g. solar cells
    • H10F10/10—Individual photovoltaic cells, e.g. solar cells having potential barriers
    • H10F10/14—Photovoltaic cells having only PN homojunction potential barriers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F10/00—Individual photovoltaic cells, e.g. solar cells
    • H10F10/10—Individual photovoltaic cells, e.g. solar cells having potential barriers
    • H10F10/14—Photovoltaic cells having only PN homojunction potential barriers
    • H10F10/146—Back-junction photovoltaic cells, e.g. having interdigitated base-emitter regions on the back side
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H10F71/121—The active layers comprising only Group IV materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H10F71/129—Passivating
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/30—Coatings
    • H10F77/306—Coatings for devices having potential barriers
    • H10F77/311—Coatings for devices having potential barriers for photovoltaic cells
    • H10F77/315—Coatings for devices having potential barriers for photovoltaic cells the coatings being antireflective or having enhancing optical properties
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/70—Surface textures, e.g. pyramid structures
    • H10F77/703—Surface textures, e.g. pyramid structures of the semiconductor bodies, e.g. textured active layers
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/547—Monocrystalline silicon PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Definitions

  • the invention relates to a preparation method of a partial back contact solar cell, and belongs to the technical field of solar cells.
  • Solar power plants also known as solar cells or photovoltaic cells, can convert solar energy directly into electrical energy.
  • the power generation principle is based on the photovoltaic effect of the semiconductor PN junction.
  • the core is to cover the back surface of the silicon wafer with aluminum oxide or silicon oxide film (5 ⁇ 100 nm) to passivate the surface and improve the long-wave response, thereby improving the conversion efficiency of the battery.
  • aluminum oxide or silicon oxide film 5 ⁇ 100 nm
  • alumina or silicon oxide is not electrically conductive, so it is necessary to partially open the film so that the aluminum metal is in contact with the back surface of the silicon wafer to collect current.
  • aluminum metal usually aluminum paste
  • the high-temperature sintering process will destroy the passivation of aluminum oxide or silicon oxide, so it is usually covered on the aluminum oxide or silicon oxide film to protect the silicon nitride film. effect.
  • the existing preparation method of the partial back contact solar cell mainly comprises the following steps: removing the surface damage layer of the silicon wafer, texturing, diffusion, back polishing, etching and de-contamination glass, back deposition of aluminum oxide or silicon oxide film, deposition nitridation A silicon protective film, a silicon nitride anti-reflective layer deposited on the front surface, a partial opening on the back surface, a metal paste on the back side of the screen printing, and sintering are used to obtain a solar cell.
  • the above preparation method has the following problems: (1) due to the large number of process steps, the cost is high, and the cost is further reduced; (2) the photoelectric conversion efficiency of the obtained partial back contact solar cell is still low, and further improved. Space.
  • the technical solution adopted by the present invention is: a method for preparing a partial back contact solar cell, comprising the steps of: removing a surface damage layer of a silicon wafer and performing double-side polishing, texturing, forming a PN junction, etching And de-contaminated glass, backside deposited passivation film, front side deposition Passivation anti-reflection layer, partial back opening, screen printing front back metal paste, sintering;
  • the texturing step adopts a metal catalytic corrosion method
  • the pile surface structure is a nano-scale suede structure.
  • the texturing step employs a metal catalytic etching method
  • the metal catalytic chemical etching method is a prior art.
  • the surface reflectance of the nano-scale suede structure is between 12 and 20%.
  • the invention realizes that the surface damage layer of the silicon wafer and the double-side polishing are combined into one step, which not only achieves the purpose of removing the damaged layer on the surface of the silicon wafer, but also forms a polishing surface of the back passivation, thereby saving the prior art.
  • the step of back polishing is required after the diffusion step, which simplifies the process and reduces the cost.
  • the formation of nano-scale suede after polishing can make the PN junction smoother, reduce the junction area recombination, increase the open circuit voltage, and also facilitate the metal contact, and improve the FF while increasing the opening pressure.
  • the step of removing the surface damage layer of the silicon wafer and performing the double-side polishing step is performed by using an acid solution or an alkali solution for 2 to 20 minutes.
  • the acid solution is a mixture of HNO 3 and HF, or a mixture of H 2 CrO 4 and HF; the temperature is 5 to 45 ° C;
  • HNO 3 69%) / HF (49%) or H 2 CrO 4 (60%) / HF (49%) volume ratio is greater than 4:1;
  • the alkali solution is a NaOH solution, a KOH solution or a tetramethylammonium hydroxide solution; the temperature is 5 to 95 ° C; and the volume concentration of the above alkali solution is greater than 1%.
  • the HNO 3 (69%) / HF (49%) refers to a volume concentration of 69% HNO 3 and a volume concentration of 49% HF;
  • the H 2 CrO 4 (60%) / HF (49%) means H 2 CrO 4 having a volume concentration of 60% and HF having a volume concentration of 49%.
  • the tetramethylammonium hydroxide solution is also referred to as a TMAH solution.
  • the processing time for removing the surface damage layer of the silicon wafer and performing the double-side polishing step is 2 to 10 min.
  • the texturing step is as follows: first, the silicon wafer is immersed in a solution containing metal ions, and the surface of the silicon wafer is coated with a layer of metal nanoparticles;
  • the surface of the silicon wafer is then etched with a chemical etching solution to form a nanoscale suede;
  • the chemical etching solution is a hydrofluoric acid solution containing an oxidizing agent.
  • the method is a two-step metal catalytic etching method.
  • the metal ion-containing solution is a metal salt solution containing hydrofluoric acid.
  • the texturing step is as follows: the silicon wafer is placed in a hydrofluoric acid solution containing an oxidizing agent and a metal salt to form a nano-scale suede on the surface of the silicon wafer.
  • the method is a one-step metal catalytic etching method.
  • the metal ion may be selected from metal ions of the prior art, such as one or more of gold, silver, copper, nickel; the oxidizing agent may be H 2 O 2 , HNO 3 or H 2 CrO 4 .
  • the concentration of the metal ions in the solution is greater than 6E -5 mol/L.
  • the nano-sized suede has a size of 100 to 900 nm.
  • the chemical etching solution is selected from one of the following solutions: a NaOH solution, a KOH solution, a tetramethylammonium hydroxide solution, a mixed solution of an acidic oxidizing agent and HF acid.
  • the above-mentioned micro-structure correction etching of the surface of the silicon wafer by using a chemical etching solution that is, using the alkali solution (NaOH solution, KOH solution, tetramethylammonium hydroxide solution or mixed acid (HF and HNO 3 )) to prepare the nanometer prepared above
  • a chemical etching solution that is, using the alkali solution (NaOH solution, KOH solution, tetramethylammonium hydroxide solution or mixed acid (HF and HNO 3 )
  • the microstructure of the suede (linear or deep-hole) is modified by corrosion.
  • the lye is mainly anisotropically etched on the above-mentioned linear or deep-hole microstructure, and the anisotropic corrosion will follow the original line shape.
  • etching results result in the original linear or deep-hole microstructures being modified into angular pyramids or nano-pyramids or nano-pit structures, while mixed acids (HF and HNO 3 ) is mainly isotropic etching of the above-mentioned linear or deep-hole microstructures.
  • This isotropic corrosion will preferentially proceed along the original linear or deep-hole microstructures, and the etching result will make the original
  • the linear or deep-hole microstructure is modified into a nanopore structure with a larger aperture and a shallower depth, and the modified nano-spun surface is finally obtained by the modified etching in this step.
  • the silicon wafer is washed with an acid solution or deionized water to remove metal particles.
  • the preparation method of the present invention can be applied to a solar cell fabricated by a diamond wire-cut silicon wafer.
  • the present invention has the following advantages over the prior art:
  • the present invention develops a new method for preparing a partial back contact solar cell.
  • the silicon wafer is double-sided polished while removing the damage layer on the surface of the silicon wafer, that is, the surface damage layer of the silicon wafer and the double-side polishing are combined into one step.
  • the process is realized not only to achieve the purpose of removing the damaged layer on the surface of the silicon wafer, but also to form a back passivated polished surface, thereby saving the steps required in the prior art to perform back polishing after the diffusion step, and simplifying the process flow. Saving production time, improving efficiency and reducing cost; mass production of polysilicon PERC battery without increasing battery manufacturing cost per watt;
  • the invention first uses chemical etching to perform double-side polishing, and then forms nano-scale suede, so that the PN junction formed after diffusion is flatter, the junction region is reduced, the open circuit voltage is increased, and the metal contact is also facilitated, and the opening pressure is improved.
  • the FF is improved, and the experiment proves that the battery efficiency of the polycrystalline silicon PERC battery obtained by the invention is improved by about 0.47% compared with the prior art, and an unexpected technical effect is obtained;
  • the front surface of the invention adopts a nano-sue structure, reduces the reflectivity of the front surface, increases the absorption of short-wave, and combines the back passivation film process to achieve the purpose of increasing the full-band light absorption, thereby greatly improving the efficiency of the polycrystalline silicon battery.
  • Embodiment 1 is a diagrammatic representation of Embodiment 1:
  • a method for preparing a polycrystalline silicon PERC solar cell comprises the following steps:
  • the polycrystalline silicon wafer is removed from the surface damage layer and double-sided polished by a KOH solution having a mass concentration of 2%, the temperature is 70 ° C, and the time is 6 min;
  • the polished silicon wafer is subjected to metal catalytic etching to prepare nano-sue, the nano-sue size is 300-500 nm, and the reflectivity is 17%;
  • the texturing step is as follows: the silicon wafer is placed in a metal ion-containing layer.
  • the chemical etching solution a nano-scale suede is formed on the surface of the silicon wafer;
  • the chemical etching solution is a mixed solution of H 2 O 2 and hydrofluoric acid containing silver ions, wherein the concentration of the metal ions is greater than 6E -5 mol/L; 2 O 2 concentration is 0.5 mol / l, HF concentration is 10 mol / L;
  • the melted silicon wafer is placed in a diffusion furnace for diffusion, and the diffusion temperature is 800 ° C to 840 °C, the running time is 60-90min, the sheet resistance is 60-120 ⁇ /sq;
  • the diffused silicon wafer is subjected to backside, edge etching and removal of the surface PSG layer;
  • the Al 2 O 3 passivation layer is deposited by ALD on the back side of the etched silicon wafer and annealed.
  • a SiNx film is deposited by PECVD on the Al 2 O 3 passivation layer;
  • a silicon nitride antireflection film is deposited by PECVD on the front surface of the silicon wafer;
  • the partial back contact solar cell is prepared by using the same raw materials as the embodiment, and the preparation method mainly comprises the following steps: removing the surface damage layer of the silicon wafer, texturing, diffusion, back polishing, etching and de-contamination glass, back deposition of aluminum oxide or oxidation.
  • a silicon film, a deposited silicon nitride protective film, a silicon nitride antireflection layer deposited on the front side, a partial opening on the back surface, a screen printed front side metal paste, and sintered are used to obtain a solar cell.
  • the cell efficiency of the polycrystalline silicon PERC battery produced by the present invention is improved by about 0.47%, and an unexpected technical effect is obtained; and the filling factor FF is improved while the opening pressure is increased.
  • the PN junction formed after diffusion in the invention is more flat and is advantageous for metal contact.

Landscapes

  • Photovoltaic Devices (AREA)
  • Weting (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Sustainable Development (AREA)

Abstract

一种局部背接触太阳能电池的制备方法，包括如下步骤：去除硅片表面损伤层并进行双面抛光、制绒、形成PN结、刻蚀和去杂质玻璃、背面沉积钝化膜、正面沉积钝化减反射层、背面局部开口、丝网印刷正背面金属浆料、烧结；其中，制绒步骤采用金属催化腐蚀法，其绒面结构为纳米级绒面结构。将去除硅片表面损伤层和双面抛光结合成一步工序来实现，从而简化了工艺流程，降低了成本。

Description

一种局部背接触太阳能电池的制备方法 技术领域
本发明涉及一种局部背接触太阳能电池的制备方法，属于太阳能电池技术领域。
背景技术
常规的化石燃料日益消耗殆尽，在现有的可持续能源中，太阳能无疑是一种最清洁、最普遍和最有潜力的替代能源。太阳能发电装置又称为太阳能电池或光伏电池，可以将太阳能直接转换成电能，其发电原理是基于半导体PN结的光生伏特效应。
随着科技的发展，出现了局部接触背钝化(PERC)太阳能电池，这是新开发出来的一种高效太阳能电池，得到了业界的广泛关注。其核心是在硅片的背光面用氧化铝或者氧化硅薄膜(5～100纳米)覆盖，以起到钝化表面，提高长波响应的作用，从而提升电池的转换效率。但是，氧化铝或者氧化硅不导电，因此需要对该薄膜局部开口，以便于铝金属与硅片背表面接触，收集电流。另外，铝金属(通常是铝浆)，在高温烧结过程中，会破坏氧化铝或者氧化硅的钝化作用，因此通常要在氧化铝或者氧化硅薄膜上再覆盖氮化硅薄膜，起到保护作用。
现有的局部背接触太阳能电池的制备方法主要包括如下步骤：去除硅片表面损伤层、制绒、扩散、背抛光、刻蚀和去杂质玻璃、背面沉积氧化铝或氧化硅薄膜、沉积氮化硅保护膜、正面沉积氮化硅减反射层、背面局部开口、丝网印刷正背面金属浆料、烧结，即可得到太阳能电池。
然而，上述制备方法存在如下问题：(1)由于工艺步骤较多，导致其成本较高，需要进一步降低成本；(2)得到的局部背接触太阳能电池的光电转换效率仍然较低，有进一步提升的空间。
发明内容
本发明的发明目的是提供一种局部背接触太阳能电池的制备方法。
为达到上述发明目的，本发明采用的技术方案是：一种局部背接触太阳能电池的制备方法，包括如下步骤：去除硅片表面损伤层并进行双面抛光、制绒、形成PN结、刻蚀和去杂质玻璃、背面沉积钝化膜、正面沉积 钝化减反射层、背面局部开口、丝网印刷正背面金属浆料、烧结；
其中，所述制绒步骤采用金属催化腐蚀法，其绒面结构为纳米级绒面结构。
上文中，所述制绒步骤采用金属催化腐蚀法，金属催化化学腐蚀法是现有技术。
所述纳米级绒面结构的表面反射率在12～20％之间。
本发明将去除硅片表面损伤层和双面抛光结合成一步工序来实现，不仅达到了去除硅片表面损伤层的目的，同时还形成了背钝化的抛光面，从而节省了现有技术中在扩散步骤之后需要进行背抛光的步骤，简化了工艺流程，降低了成本。同时抛光后再形成纳米级绒面能使PN结更平整，降低结区复合，提高开路电压，还有利于金属接触，在提高开压的同时提升FF。
优选的，所述所述去除硅片表面损伤层并进行双面抛光步骤采用酸液或碱液进行，时间为2～20min，
所述酸液为HNO3与HF的混合液，或H2CrO4与HF的混合液；温度为5～45℃；
在HNO3与HF的混合液中，HNO3(69％)/HF(49％)或H2CrO4(60％)/HF(49％)体积比大于4:1；
所述碱液为NaOH溶液、KOH溶液或四甲基氢氧化铵溶液；温度为5～95℃；上述碱液的体积浓度大于1％。
上文中，所述HNO3(69％)/HF(49％)是指体积浓度为69％的HNO3和体积浓度为49％的HF；
所述H2CrO4(60％)/HF(49％)是指体积浓度为60％的H2CrO4和体积浓度为49％的HF。
所述四甲基氢氧化铵溶液也称为TMAH溶液。
优选的，所述去除硅片表面损伤层并进行双面抛光步骤的处理时间为2～10min。
上述技术方案中，所述制绒步骤如下：先将硅片放入含有金属离子的溶液中浸泡，使硅片表面涂覆一层金属纳米颗粒；
然后用化学腐蚀液腐蚀硅片表面，形成纳米级绒面；所述化学腐蚀液为含有氧化剂的氢氟酸溶液。该方法即为两步金属催化刻蚀法。
上述技术方案中，所述含有金属离子的溶液为含有氢氟酸的金属盐溶液。
上述技术方案中，所述制绒步骤如下：将硅片放入含有氧化剂以及金属盐的氢氟酸溶液中，在硅片表面形成纳米级绒面。该方法即为一步金属催化刻蚀法。
所述金属离子可从现有技术的金属离子中选用，比如金、银、铜、镍中的一种或几种；所述氧化剂可以是H2O2、HNO3或H2CrO4。
上述技术方案中，所述溶液中金属离子的浓度大于6E-5mol/L。
优选的，所述纳米级绒面的尺寸为100～900nm。
上述技术方案中，所述制绒和形成PN结步骤之间，还有绒面微结构修正刻蚀步骤，具体如下：将带有绒面的硅片放入化学腐蚀液中进行微结构修正刻蚀；
所述化学腐蚀液选自以下溶液中的一种：NaOH溶液、KOH溶液、四甲基氢氧化铵溶液、酸性氧化剂与HF酸的混合溶液。
上述利用化学腐蚀溶液对硅片表面进行微结构修正刻蚀，即利用碱液(NaOH溶液、KOH溶液、四甲基氢氧化铵溶液或混合酸(HF和HNO3))对上述制得的纳米绒面的微结构(线状或深孔状)进行腐蚀修正，碱液主要是对上述线状或深孔状微结构进行各向异性腐蚀，这种各向异性腐蚀会沿着原来的线状或深孔状微结构优先进行，刻蚀结果就会使原来的线状或深孔状微结构被修正成带有棱角的纳米金字塔或纳米椎体或纳米坑状结构，而混合酸(HF和HNO3)主要是对上述线状或深孔状微结构进行各向同性腐蚀，这种各向同性腐蚀会沿着原来的线状或深孔状微结构优先进行，刻蚀结果就会使原来的线状或深孔状微结构被修正成孔径较大，深度较浅的纳米孔状结构，通过该步的修正刻蚀最终制得较优的纳米绒面。
上述技术方案中，在所述绒面微结构修正刻蚀步骤之前或之后，还有去除金属颗粒步骤，具体如下：分别用酸液、去离子水清洗硅片，去除金属颗粒。
本发明的制备方法可用于金刚线切割硅片制作的太阳能电池。
由于上述技术方案运用，本发明与现有技术相比具有下列优点：
1、本发明开发了一种新的局部背接触太阳能电池的制备方法，在去除硅片表面损伤层的同时将硅片进行双面抛光，即将去除硅片表面损伤层和双面抛光结合成一步工序来实现，不仅达到了去除硅片表面损伤层的目的，同时还形成了背钝化的抛光面，从而节省了现有技术中在扩散步骤之后需要进行背抛光的步骤，简化了工艺流程，节约了生产时间，提高了效率，降低了成本；可以在不增加电池每瓦制造成本的情况下大批量生产多晶硅PERC电池；
2、本发明先采用化学腐蚀进行双面抛光，然后形成纳米级绒面，使扩散后形成的PN结更平整，降低结区复合，提高开路电压，还有利于金属接触，在提高开压的同时提升FF，实验证明，与现有技术相比，本发明制得的多晶硅PERC电池的电池效率提升0.47％左右，取得了意想不到的技术效果；
3、本发明的前表面采用了纳米绒面结构，降低前表面的反射率增加短波的吸收，再结合背面钝化膜工艺，实现了增加全波段光吸收的目的，大幅提高了多晶硅电池的效率。
具体实施方式
下面结合实施例对本发明进一步描述。
实施例一：
一种多晶硅PERC太阳能电池的制备方法，由如下步骤组成：
首先，采用质量浓度为2％的KOH溶液将多晶硅片去除表面损伤层和双面抛光，温度为70℃，时间为6min；
紧接，着将抛光后的硅片进行金属催化腐蚀制备纳米绒面，纳米绒面大小为300～500nm，反射率为17％；所述制绒步骤如下：将硅片放入含有金属离子的化学腐蚀液中，在硅片表面形成纳米级绒面；所述化学腐蚀液是含有银离子的H2O2和氢氟酸混合溶液，其中金属离子的浓度大于6E-5mol/L；H2O2浓度为0.5mol/l，HF浓度为10mol/L；
然后，将制绒后的硅片放入扩散炉内进行扩散，扩散温度为800℃～840 ℃，运行时间为60～90min，方块电阻为60～120Ω/sq；
再然后，将扩散后硅片进行背面、边缘刻蚀并去除表面PSG层；
其次，将刻蚀后硅片背面ALD沉淀Al2O3钝化层并做退火处理，
随后再在Al2O3钝化层上PECVD沉积SiNx薄膜；
再其次，在硅片的前表面PECVD沉积氮化硅减反射薄膜；
随后，利用激光对背面局域开口；
最后，丝网印刷制备电极并形成欧姆接触。
对比例一
采用与实施例相同的原料制备局部背接触太阳能电池，其制备方法主要包括如下步骤：去除硅片表面损伤层、制绒、扩散、背抛光、刻蚀和去杂质玻璃、背面沉积氧化铝或氧化硅薄膜、沉积氮化硅保护膜、正面沉积氮化硅减反射层、背面局部开口、丝网印刷正背面金属浆料、烧结，即可得到太阳能电池。
将上述实施例和对比例的太阳能电池进行测试，结果如下：
  Uoc(mV) Jsc(mA/cm2) FF(％) EFF
常规多晶电池 633.3 36.02 78.46 17.90％
对比例一 641.4 36.80 77.82 18.37％
实施例一 644.2 37.22 78.58 18.84％
由上表可见，与对比例相比，本发明制得的多晶硅PERC电池的电池效率提升0.47％左右，取得了意想不到的技术效果；且在提高开压的同时提升了填充因子FF，说明本发明在扩散后形成的PN结更平整，有利于金属接触。

Claims (9)

  1. 一种局部背接触太阳能电池的制备方法，其特征在于，包括如下步骤：去除硅片表面损伤层并进行双面抛光、制绒、形成PN结、刻蚀和去杂质玻璃、背面沉积钝化膜、正面沉积钝化减反射层、背面局部开口、丝网印刷正背面金属浆料、烧结；
    其中，所述制绒步骤采用金属催化腐蚀法，其绒面结构为纳米级绒面结构。
  2. 根据权利要求1所述的制备方法，其特征在于：所述去除硅片表面损伤层并进行双面抛光步骤采用酸液或碱液进行，时间为2～20min，
    所述酸液为HNO3与HF的混合液，或H2CrO4与HF的混合液；温度为5～45℃；
    在HNO3与HF的混合液中，HNO3(69％)/HF(49％)或H2CrO4(60％)/HF(49％)体积比大于4:1；
    所述碱液为NaOH溶液、KOH溶液或四甲基氢氧化铵溶液；温度为5～95℃；上述碱液的体积浓度大于1％。
  3. 根据权利要求2所述的制备方法，其特征在于：所述去除硅片表面损伤层并进行双面抛光步骤的处理时间为2～10min。
  4. 根据权利要求1所述的制备方法，其特征在于，所述制绒步骤如下：先将硅片放入含有金属离子的溶液中浸泡，使硅片表面涂覆一层金属纳米颗粒；
    然后用化学腐蚀液腐蚀硅片表面，形成纳米级绒面；所述化学腐蚀液为含有氧化剂的氢氟酸溶液。
  5. 根据权利要求4所述的制备方法，其特征在于，所述含有金属离子的溶液为含有氢氟酸的金属盐溶液。
  6. 根据权利要求1所述的制备方法，其特征在于，所述制绒步骤如下：将硅片放入含有氧化剂以及金属盐的氢氟酸溶液中，在硅片表面形成纳米级绒面。
  7. 根据权利要求4或6所述的制备方法，其特征在于，所述溶液中金属离子的浓度大于6E-5mol/L。
  8. 根据权利要求1所述的制备方法，其特征在于：所述制绒和形成PN 结步骤之间，还有绒面微结构修正刻蚀步骤，具体如下：将带有绒面的硅片放入化学腐蚀液中进行微结构修正刻蚀；
    所述化学腐蚀液选自以下溶液中的一种：NaOH溶液、KOH溶液、四甲基氢氧化铵溶液、酸性氧化剂与HF酸的混合溶液。
  9. 根据权利要求8所述的制备方法，其特征在于：在所述绒面微结构修正刻蚀步骤之前或之后，还有去除金属颗粒步骤，具体如下：分别用酸液、去离子水清洗硅片，去除金属颗粒。
PCT/CN2015/100097 2015-07-09 2015-12-31 一种局部背接触太阳能电池的制备方法 Ceased WO2017004958A1 (zh)

Priority Applications (4)

Application Number Priority Date Filing Date Title
US15/514,287 US9966484B2 (en) 2015-07-09 2015-12-31 Process for preparing passivated emitter rear contact (PERC) solar cells
EP15897606.8A EP3321979B1 (en) 2015-07-09 2015-12-31 Preparation method for local back contact solar cell
CN201580083085.7A CN108292691A (zh) 2015-07-09 2015-12-31 一种局部背接触太阳能电池的制备方法
JP2018520006A JP6666438B2 (ja) 2015-07-09 2015-12-31 局部バックコンタクト太陽電池の製造方法

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
CN201510400159.7A CN104993019A (zh) 2015-07-09 2015-07-09 一种局部背接触太阳能电池的制备方法
CN201510400159.7 2015-07-09

Publications (1)

Publication Number Publication Date
WO2017004958A1 true WO2017004958A1 (zh) 2017-01-12

Family

ID=54304803

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/CN2015/100097 Ceased WO2017004958A1 (zh) 2015-07-09 2015-12-31 一种局部背接触太阳能电池的制备方法

Country Status (6)

Country Link
US (1) US9966484B2 (zh)
EP (1) EP3321979B1 (zh)
JP (1) JP6666438B2 (zh)
CN (2) CN104993019A (zh)
TW (1) TWI669830B (zh)
WO (1) WO2017004958A1 (zh)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102017206455A1 (de) * 2017-04-13 2018-10-18 Rct Solutions Gmbh Verfahren und Vorrichtung zur chemischen Bearbeitung eines Halbleiter-Substrats
CN110364578A (zh) * 2018-04-09 2019-10-22 成都晔凡科技有限公司 制备用于perc叠瓦组件的太阳能电池片的方法和系统
CN110534408A (zh) * 2019-07-30 2019-12-03 苏州昊建自动化系统有限公司 一种晶硅电池片链式碱抛光生产线以及链式碱抛光方法
CN119092561A (zh) * 2024-09-10 2024-12-06 淮安捷泰新能源科技有限公司 一种TOPCon太阳能电池及其制备工艺

Families Citing this family (23)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN104993019A (zh) * 2015-07-09 2015-10-21 苏州阿特斯阳光电力科技有限公司 一种局部背接触太阳能电池的制备方法
CN105489709B (zh) * 2016-01-20 2018-04-13 上海大族新能源科技有限公司 Perc太阳能电池及其制备方法
CN105845778A (zh) * 2016-05-19 2016-08-10 晋能清洁能源科技有限公司 不影响正表面的晶硅perc电池碱抛光方法
CN109671802A (zh) * 2017-10-16 2019-04-23 上海神舟新能源发展有限公司 一种背钝化高效多晶硅perc双面电池工艺
CN107825818B (zh) * 2017-10-20 2019-10-25 中国电子科技集团公司第四十八研究所 蜂窝结构板表面聚酰亚胺膜的粘贴工艺
CN108010987A (zh) * 2017-11-13 2018-05-08 江苏爱多能源科技有限公司 一种采用丝网印刷氧化铝浆料的电池片成型工艺
KR20190068352A (ko) * 2017-12-08 2019-06-18 삼성에스디아이 주식회사 태양전지 셀
CN108447942B (zh) * 2018-03-09 2020-08-21 常州时创能源股份有限公司 多晶黑硅perc电池的抛光制绒工艺
CN109285772B (zh) * 2018-07-06 2021-07-13 横店集团东磁股份有限公司 一种多晶硅电池片链式背抛光方法及其装置
CN109216505A (zh) * 2018-09-26 2019-01-15 上海神舟新能源发展有限公司 具备多晶硅钝化膜的晶体硅太阳电池的制备方法
CN109830564B (zh) * 2018-12-06 2021-01-01 中建材浚鑫科技有限公司 一种太阳能电池片的背抛光工艺
CN110854240B (zh) * 2019-12-09 2026-01-30 通威太阳能(眉山)有限公司 Perc电池及其制备方法
CN112951946B (zh) * 2019-12-11 2023-03-17 盐城阿特斯阳光能源科技有限公司 Perc返工电池的返工工艺
CN114334801A (zh) * 2020-09-30 2022-04-12 中芯国际集成电路制造(上海)有限公司 半导体结构的形成方法
CN114420767A (zh) * 2020-10-12 2022-04-29 嘉兴阿特斯技术研究院有限公司 太阳能电池的制备方法及太阳能电池
CN112133792A (zh) * 2020-10-12 2020-12-25 青海黄河上游水电开发有限责任公司光伏产业技术分公司 一种太阳能电池及其制作方法
CN112563370A (zh) * 2020-12-04 2021-03-26 通威太阳能（安徽）有限公司 单晶perc晶硅电池背钝化制备工艺及perc太阳能电池
CN114686843A (zh) * 2020-12-30 2022-07-01 苏州阿特斯阳光电力科技有限公司 太阳能电池的制备方法及太阳能电池
CN113299796B (zh) * 2021-05-28 2022-11-29 天津爱旭太阳能科技有限公司 一种晶体硅片的制绒方法及硅片
CN114188439A (zh) * 2021-11-22 2022-03-15 苏州腾晖光伏技术有限公司 一种解决钝化接触晶硅电池切割损失的方法
CN117358928A (zh) * 2022-07-01 2024-01-09 苏州珂玛材料科技股份有限公司 一种带有rf电极的加热装置的修复方法
CN115241330B (zh) * 2022-09-19 2022-12-27 英利能源发展(天津)有限公司 一种氢氟酸刻蚀太阳能电池用半导体硅片装置
CN118738223A (zh) * 2024-08-07 2024-10-01 淮安捷泰新能源科技有限公司 一种TOPCon太阳能电池的制备方法

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20100258173A1 (en) * 2009-04-13 2010-10-14 Joseph Laia Polishing a thin metallic substrate for a solar cell
CN102487105A (zh) * 2010-12-06 2012-06-06 中国科学院微电子研究所 一种制备立体结构高效太阳能电池的方法
CN102751377A (zh) * 2012-06-20 2012-10-24 常州天合光能有限公司 一种用于高效晶硅太阳电池制作的表面湿法处理工艺
CN103219428A (zh) * 2013-04-12 2013-07-24 苏州大学 一种晶体硅太阳能电池的绒面结构及其制备方法
CN104993019A (zh) * 2015-07-09 2015-10-21 苏州阿特斯阳光电力科技有限公司 一种局部背接触太阳能电池的制备方法

Family Cites Families (26)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005150609A (ja) * 2003-11-19 2005-06-09 Sharp Corp 太陽電池の製造方法
JP3925867B2 (ja) * 2003-12-17 2007-06-06 関西ティー・エル・オー株式会社 多孔質層付きシリコン基板を製造する方法
JP4263124B2 (ja) * 2004-03-25 2009-05-13 三洋電機株式会社 半導体素子の製造方法
JP3687970B1 (ja) * 2004-12-24 2005-08-24 信越化学工業株式会社 太陽光発電用モジュール及びこれを用いた太陽光発電システム
KR101088280B1 (ko) * 2007-10-24 2011-11-30 미쓰비시덴키 가부시키가이샤 태양전지의 제조 방법
EP2327106A4 (en) * 2008-09-16 2015-09-30 Lg Electronics Inc SOLAR CELL AND METHOD OF TEXTURING THEREOF
EP2438140A1 (en) * 2009-06-04 2012-04-11 Merck Patent GmbH Two component etching
WO2011060193A1 (en) * 2009-11-11 2011-05-19 Alliance For Sustainable Energy, Llc Wet-chemical systems and methods for producing black silicon substrates
CN101937944A (zh) 2010-08-31 2011-01-05 上海交通大学 双面钝化的晶体硅太阳电池的制备方法
US11251318B2 (en) * 2011-03-08 2022-02-15 Alliance For Sustainable Energy, Llc Efficient black silicon photovoltaic devices with enhanced blue response
KR101668402B1 (ko) * 2011-03-30 2016-10-28 한화케미칼 주식회사 태양 전지 제조 방법
CN102403399B (zh) * 2011-07-30 2013-10-30 常州天合光能有限公司 一膜多用的掩膜后制绒太阳能电池的制备方法及其结构
KR101860919B1 (ko) * 2011-12-16 2018-06-29 엘지전자 주식회사 태양 전지 및 이의 제조 방법
CN102569522A (zh) * 2012-02-09 2012-07-11 常州大学 一种高效晶体硅太阳电池局部背接触结构的制备方法
WO2014044482A2 (en) * 2012-09-24 2014-03-27 Imec Method for fabricating silicon photovoltaic cells
JP2014146712A (ja) * 2013-01-29 2014-08-14 Hyogo Prefecture 太陽電池および太陽電池の製造方法
US20140261666A1 (en) * 2013-03-13 2014-09-18 Applied Materials, Inc. Methods of manufacturing a low cost solar cell device
JP6114108B2 (ja) * 2013-05-20 2017-04-12 信越化学工業株式会社 太陽電池の製造方法
JP2015053398A (ja) * 2013-09-06 2015-03-19 株式会社ジェイ・イー・ティ 太陽電池の製造方法
CN103456804B (zh) * 2013-09-24 2016-04-27 上海大学 在多晶硅上形成倒金字塔型多孔表面纳米织构的方法及制备短波增强型太阳电池的方法
CN103603055B (zh) * 2013-11-25 2016-03-23 英利能源（中国）有限公司 单晶硅片的抛光方法、太阳能电池片及其制作方法
CN104716224A (zh) * 2013-12-13 2015-06-17 上海神舟新能源发展有限公司 一种背钝化高效perl电池工艺
CN104051580B (zh) * 2014-07-10 2017-05-24 苏州大学 硅太阳能电池及其制备方法
CN104218123A (zh) * 2014-09-05 2014-12-17 奥特斯维能源（太仓）有限公司 基于离子注入工艺的n型IBC硅太阳能电池制作方法
CN104393114A (zh) * 2014-11-17 2015-03-04 中国电子科技集团公司第四十八研究所 一种微纳复合绒面结构的多晶黑硅制备方法
CN104638031A (zh) * 2015-01-21 2015-05-20 中电投西安太阳能电力有限公司 基于GaN纳米线阵列的太阳能电池及其制备方法

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20100258173A1 (en) * 2009-04-13 2010-10-14 Joseph Laia Polishing a thin metallic substrate for a solar cell
CN102487105A (zh) * 2010-12-06 2012-06-06 中国科学院微电子研究所 一种制备立体结构高效太阳能电池的方法
CN102751377A (zh) * 2012-06-20 2012-10-24 常州天合光能有限公司 一种用于高效晶硅太阳电池制作的表面湿法处理工艺
CN103219428A (zh) * 2013-04-12 2013-07-24 苏州大学 一种晶体硅太阳能电池的绒面结构及其制备方法
CN104993019A (zh) * 2015-07-09 2015-10-21 苏州阿特斯阳光电力科技有限公司 一种局部背接触太阳能电池的制备方法

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102017206455A1 (de) * 2017-04-13 2018-10-18 Rct Solutions Gmbh Verfahren und Vorrichtung zur chemischen Bearbeitung eines Halbleiter-Substrats
CN110364578A (zh) * 2018-04-09 2019-10-22 成都晔凡科技有限公司 制备用于perc叠瓦组件的太阳能电池片的方法和系统
CN110534408A (zh) * 2019-07-30 2019-12-03 苏州昊建自动化系统有限公司 一种晶硅电池片链式碱抛光生产线以及链式碱抛光方法
CN119092561A (zh) * 2024-09-10 2024-12-06 淮安捷泰新能源科技有限公司 一种TOPCon太阳能电池及其制备工艺

Also Published As

Publication number Publication date
US9966484B2 (en) 2018-05-08
JP2018526835A (ja) 2018-09-13
US20170294545A1 (en) 2017-10-12
CN108292691A (zh) 2018-07-17
TW201703277A (zh) 2017-01-16
JP6666438B2 (ja) 2020-03-13
EP3321979B1 (en) 2021-01-20
EP3321979A1 (en) 2018-05-16
TWI669830B (zh) 2019-08-21
EP3321979A4 (en) 2019-03-20
CN104993019A (zh) 2015-10-21

Similar Documents

Publication Publication Date Title
TWI669830B (zh) 一種局部背接觸太陽能電池的製造方法
CN102290473B (zh) 一种背面点接触晶体硅太阳电池及制备方法
CN103996743B (zh) 铝浆烧穿局部薄膜的背钝化点接触太阳能电池的制备方法
CN103996746B (zh) 一种可量产的perl晶体硅太阳电池的制作方法
CN109244194A (zh) 一种低成本p型全背电极晶硅太阳电池的制备方法
CN110690297A (zh) 一种p型隧穿氧化物钝化接触太阳能电池及其制备方法
CN101916787A (zh) 一种黑硅太阳能电池及其制备方法
CN104934500A (zh) 一种选择性发射极的背钝化晶体硅太阳能电池的制备方法
CN105576074A (zh) 一种n型双面电池的湿法刻蚀方法
CN108666393A (zh) 太阳能电池的制备方法及太阳能电池
CN114695593B (zh) 背接触电池的制备方法及背接触电池
CN104201252A (zh) 一种perc太阳能电池的制备方法
CN103219427A (zh) 一种高陷光纳米结构单面制绒的实现方法
CN103996747A (zh) 背面单层氧化铝作为钝化膜的晶体硅太阳能电池制备方法
CN104218122A (zh) 一种降低金刚线切割的多晶硅反射率的制绒方法
CN210349847U (zh) 一种p型隧穿氧化物钝化接触太阳能电池
CN113013293A (zh) 一种异质结电池的制备方法
CN206558515U (zh) 一种局部铝背场太阳能电池
CN103050573B (zh) 一种背钝化电池的制备方法
CN109671802A (zh) 一种背钝化高效多晶硅perc双面电池工艺
CN111769175B (zh) 一种perc单晶硅太阳能电池及其制备方法
CN101958364B (zh) 一种背面钝化的太阳能电池的生产方法
CN105696083B (zh) 一种太阳能电池绒面的制备方法
CN205104495U (zh) 一种高效晶硅太阳能电池
CN105655448B (zh) 一种高效彩色多晶太阳能电池及其制备方法

Legal Events

Date Code Title Description
121 Ep: the epo has been informed by wipo that ep was designated in this application

Ref document number: 15897606

Country of ref document: EP

Kind code of ref document: A1

WWE Wipo information: entry into national phase

Ref document number: 15514287

Country of ref document: US

ENP Entry into the national phase

Ref document number: 2018520006

Country of ref document: JP

Kind code of ref document: A

NENP Non-entry into the national phase

Ref country code: DE

WWE Wipo information: entry into national phase

Ref document number: 2015897606

Country of ref document: EP