WO2017041221A1 - Methods for making an x-ray detector - Google Patents

Methods for making an x-ray detector Download PDF

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Publication number
WO2017041221A1
WO2017041221A1 PCT/CN2015/089103 CN2015089103W WO2017041221A1 WO 2017041221 A1 WO2017041221 A1 WO 2017041221A1 CN 2015089103 W CN2015089103 W CN 2015089103W WO 2017041221 A1 WO2017041221 A1 WO 2017041221A1
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WO
WIPO (PCT)
Prior art keywords
ray
visible light
semiconductor
electrons
scintillators
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/CN2015/089103
Other languages
French (fr)
Inventor
Peiyan CAO
Yurun LIU
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Shenzhen Xpectvision Technology Co Ltd
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Shenzhen Xpectvision Technology Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Shenzhen Xpectvision Technology Co Ltd filed Critical Shenzhen Xpectvision Technology Co Ltd
Priority to EP15903328.1A priority Critical patent/EP3347741B1/en
Priority to CN201580081798.XA priority patent/CN107923987B/en
Priority to PCT/CN2015/089103 priority patent/WO2017041221A1/en
Priority to US15/309,085 priority patent/US10007007B2/en
Priority to TW105126637A priority patent/TWI652499B/en
Publication of WO2017041221A1 publication Critical patent/WO2017041221A1/en
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

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    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01T—MEASUREMENT OF NUCLEAR OR X-RADIATION
    • G01T1/00—Measuring X-radiation, gamma radiation, corpuscular radiation, or cosmic radiation
    • G01T1/16—Measuring radiation intensity
    • G01T1/24—Measuring radiation intensity with semiconductor detectors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/18—Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors
    • H10F39/189—X-ray, gamma-ray or corpuscular radiation imagers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/18—Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors
    • H10F39/189—X-ray, gamma-ray or corpuscular radiation imagers
    • H10F39/1895—X-ray, gamma-ray or corpuscular radiation imagers of the hybrid type
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/191—Photoconductor image sensors
    • H10F39/195—X-ray, gamma-ray or corpuscular radiation imagers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/803—Pixels having integrated switching, control, storage or amplification elements
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/809—Constructional details of image sensors of hybrid image sensors

Definitions

  • the disclosure herein relates to X-ray detectors, particularly relates to methods for making semiconductor X-ray detectors.
  • X-ray detectors may be devices used to measure the flux, spatial distribution, spectrum or other properties of X-rays.
  • X-ray detectors may be used for many applications.
  • One important application is imaging.
  • X-ray imaging is a radiography technique and can be used to reveal the internal structure of a non-uniformly composed and opaque object such as the human body.
  • a photographic plate may be a glass plate with a coating of light-sensitive emulsion. Although photographic plates were replaced by photographic films, they may still be used in special situations due to the superior quality they offer and their extreme stability.
  • a photographic film may be a plastic film (e.g., a strip or sheet) with a coating of light-sensitive emulsion.
  • PSP plates photostimulable phosphor plates
  • a PSP plate may contain a phosphor material with color centers in its lattice.
  • electrons excited by X-ray are trapped in the color centers until they are stimulated by a laser beam scanning over the plate surface.
  • trapped excited electrons give off light, which is collected by a photomultiplier tube. The collected light is converted into a digital image.
  • PSP plates can be reused.

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  • Physics & Mathematics (AREA)
  • Health & Medical Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Molecular Biology (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Measurement Of Radiation (AREA)
  • Solid State Image Pick-Up Elements (AREA)

Abstract

An apparatus suitable for detecting X-ray, the apparatus comprising: a first substrate (122) comprising a plurality of first electric contacts (125); a first chip layer (110) comprising a plurality of first chips (189), wherein each of the first chips (189) comprises a first electrode and is bonded to the first substrate(122) such that the first electrode is electrically connected to at least one of the first electrical contacts (125); a second substrate(122) comprising a plurality of second electric contacts (125); and a second chip layer(110) comprising a plurality of second chips (189), wherein each of the second chips (189) comprises a second electrode and is bonded to the second substrate (122) such that the second electrode is electrically connected to at least one of the second electrical contacts (125), wherein the first chip layer (110) and the second chip layer (110) are bonded to each other such that at least two second chips (189) are bonded to a same first chip (189).

Description

Methods for Making an X-Ray Detector Technical Field
The disclosure herein relates to X-ray detectors, particularly relates to methods for making semiconductor X-ray detectors.
Background
X-ray detectors may be devices used to measure the flux, spatial distribution, spectrum or other properties of X-rays.
X-ray detectors may be used for many applications. One important application is imaging. X-ray imaging is a radiography technique and can be used to reveal the internal structure of a non-uniformly composed and opaque object such as the human body.
Early X-ray detectors for imaginginclude photographic plates and photographic films. A photographic plate may be a glass plate with a coating of light-sensitive emulsion. Although photographic plates were replaced by photographic films, they may still be used in special situations due to the superior quality they offer and their extreme stability. A photographic film may be a plastic film (e.g., a strip or sheet) with a coating of light-sensitive emulsion.
In the 1980s, photostimulable phosphor plates (PSP plates) became available. A PSP plate may contain a phosphor material with color centers in its lattice. When the PSP plate is exposed to X-ray, electrons excited by X-ray are trapped in the color centers until they are stimulated by a laser beam scanning over the plate surface. As the plate is scanned by laser, trapped excited electrons give off light, which is collected by a photomultiplier tube. The collected light is converted into a digital image. In contrast to photographic plates and photographic films, PSP plates can be reused.

Claims (1)

  1. Another kind of X-ray detectors are X-ray image intensifiers. Components of anX-ray image intensifier are usually sealed in a vacuum. In contrast to photographic plates, photographic films, and PSP plates, X-ray image intensifiers may produce real-time images, i.e., not requiring post-exposure processing to produce images. X-ray first hits an input phosphor (e.g., cesium iodide) and is converted to visible light. The visible light then hits a photocathode (e.g., a thin metal layer containing cesium and antimony compounds) and causes emission of electrons. The number of emitted electrons is proportional to the intensity of the incident X-ray. The emitted electrons are projected, through electron optics, onto an output phosphor and cause the output phosphor to produce a visible-light image.
    Scintillators operate somewhat similarly to X-ray image intensifiers in that scintillators (e.g., sodium iodide) absorb X-ray and emit visible light, which can then be detected by a suitable image sensor for visible light. In scintillators, the visible light spreads and scatters in all directions and thus reduces spatial resolution. Reducing the scintillator thickness helps to improve the spatial resolution but also reduces absorption of X-ray. A scintillator thus has to strike a compromise between absorption efficiency and resolution.
    Semiconductor X-ray detectors largely overcome this problem by a direct conversion of X-ray into electric signals. A semiconductor X-ray detector may include a semiconductor layer that absorbs X-ray in wavelengths of interest. When an X-ray photon is absorbed in the semiconductor layer, multiple charge carriers (e.g., electrons and holes) are generated and swept under an electric field towards electrical contacts on the semiconductor layer.
    Cumbersome heat management required in currently available semiconductor X-ray detectors
PCT/CN2015/089103 2015-09-08 2015-09-08 Methods for making an x-ray detector Ceased WO2017041221A1 (en)

Priority Applications (5)

Application Number Priority Date Filing Date Title
EP15903328.1A EP3347741B1 (en) 2015-09-08 2015-09-08 Methods for making an x-ray detector
CN201580081798.XA CN107923987B (en) 2015-09-08 2015-09-08 Method for making an X-ray detector
PCT/CN2015/089103 WO2017041221A1 (en) 2015-09-08 2015-09-08 Methods for making an x-ray detector
US15/309,085 US10007007B2 (en) 2015-09-08 2015-09-08 Methods for making an X-ray detector
TW105126637A TWI652499B (en) 2015-09-08 2016-08-19 Method for making an X-ray detector

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/CN2015/089103 WO2017041221A1 (en) 2015-09-08 2015-09-08 Methods for making an x-ray detector

Publications (1)

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WO2017041221A1 true WO2017041221A1 (en) 2017-03-16

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Country Link
US (1) US10007007B2 (en)
EP (1) EP3347741B1 (en)
CN (1) CN107923987B (en)
TW (1) TWI652499B (en)
WO (1) WO2017041221A1 (en)

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