WO2017140159A1 - 量子点发光器件及其制备方法、显示基板和显示装置 - Google Patents

量子点发光器件及其制备方法、显示基板和显示装置 Download PDF

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WO2017140159A1
WO2017140159A1 PCT/CN2016/107830 CN2016107830W WO2017140159A1 WO 2017140159 A1 WO2017140159 A1 WO 2017140159A1 CN 2016107830 W CN2016107830 W CN 2016107830W WO 2017140159 A1 WO2017140159 A1 WO 2017140159A1
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layer
quantum dot
light
fluorescent material
emitting device
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French (fr)
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何月娣
克里斯塔尔·鲍里斯
李延钊
孙杰
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BOE Technology Group Co Ltd
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BOE Technology Group Co Ltd
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Priority claimed from CN201610091388.XA external-priority patent/CN105552245B/zh
Priority claimed from CN201610237544.9A external-priority patent/CN105870347A/zh
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Priority to JP2017534560A priority Critical patent/JP6929777B2/ja
Priority to EP16876957.8A priority patent/EP3419070B1/en
Priority to US15/539,315 priority patent/US10217953B2/en
Publication of WO2017140159A1 publication Critical patent/WO2017140159A1/zh
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
    • H10K50/11—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers
    • H10K50/115—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers comprising active inorganic nanostructures, e.g. luminescent quantum dots
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
    • H10K50/11—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers
    • H10K50/12—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers comprising dopants
    • H10K50/121—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers comprising dopants for assisting energy transfer, e.g. sensitization
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K2101/00—Properties of the organic materials covered by group H10K85/00
    • H10K2101/20—Delayed fluorescence emission
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
    • H10K50/14—Carrier transporting layers
    • H10K50/15—Hole transporting layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
    • H10K50/14—Carrier transporting layers
    • H10K50/16—Electron transporting layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
    • H10K50/17—Carrier injection layers
    • H10K50/171—Electron injection layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/60—Organic compounds having low molecular weight
    • H10K85/649—Aromatic compounds comprising a hetero atom
    • H10K85/654—Aromatic compounds comprising a hetero atom comprising only nitrogen as heteroatom
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3451—Structure
    • H10P14/3452—Microstructure
    • H10P14/3461—Nanoparticles
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S977/00—Nanotechnology
    • Y10S977/70—Nanostructure
    • Y10S977/773—Nanoparticle, i.e. structure having three dimensions of 100 nm or less
    • Y10S977/774—Exhibiting three-dimensional carrier confinement, e.g. quantum dots

Definitions

  • the present disclosure relates to a quantum dot light emitting device, a method of fabricating the same, a display substrate, and a display device.
  • Quantum Dot is a semiconductor nanostructure that binds conduction band electrons, valence band holes, and excitons in three spatial directions.
  • it may be a nanoparticle composed of a Group II-VI or Group III-V element.
  • the quantum dot particle size is generally between 1-10 nm. Since electrons and holes are quantum confined, the continuous band structure becomes a discrete energy level structure with molecular characteristics, and can be excited after being excited. Based on quantum effects, quantum dots have broad application prospects in the fields of solar cells, light-emitting devices, and optical biomarkers.
  • scientistss have invented many different methods to make quantum dots, and expect this nanomaterial to have great potential for application in nano-electronics in the 21st century.
  • the layers, holes and electrons are combined into exciton luminescence in the quantum dot luminescent layer; the other is the way of energy transfer, that is, excitons formed in the transport layer directly transfer energy to the quantum dots to emit light.
  • a typical quantum dot light emitting diode structure includes a hole injection layer, a hole transport layer, an electron transport layer, and a quantum dot light emitting layer.
  • the electron transport layer, the hole transport layer, and the hole injection layer may be organic small molecules.
  • the organic polymer may also be an inorganic metal oxide.
  • the valence band of quantum dots is much lower than the highest occupied orbital (HOMO) level of the hole transport layer, the hole injection ability is poor, resulting in carrier imbalance, causing leakage current and device degradation, thereby Affects the luminous efficiency and lifetime of the device.
  • HOMO highest occupied orbital
  • Embodiments of the present disclosure provide a quantum dot light emitting device including: a substrate; and a first electrode layer, a light emitting layer, a second electrode layer, and an encapsulation layer sequentially formed on the substrate, wherein the light emitting layer includes a quantum a luminescent material, a phosphor is disposed between the first electrode layer and the second electrode layer
  • the fluorescent material comprises a thermally excited delayed fluorescent material; one of the first electrode layer and the second electrode layer is an anode layer, and the other of the first electrode layer and the second electrode layer It is a cathode layer.
  • the quantum dot light emitting device satisfies at least one of two conditions: the fluorescent material is co-doped with the quantum dot light emitting material to form the light emitting And a fluorescent material forming an energy transfer layer on one side or both sides of the light-emitting layer, the energy transfer layer being in contact with the light-emitting layer.
  • the fluorescent material is composed of a single thermally excited delayed fluorescent material.
  • the thermally excited delayed fluorescent material is 2,4,5,6-tetrakis(9-carbazolyl)-isophthalonitrile (4CzIPN).
  • the thermally excited retardation fluorescent material is a mixture including a host material and a guest material.
  • the fluorescent material further includes a fluorescent material that does not have thermal excitation delayed fluorescence characteristics.
  • the host material includes 1,2-dicarbazole-4,5-dicyanobenzene (2-CzPN), (3'-(4, 6-Diphenyl-1,3,5-triazin-2-yl)-(1,1'-biphenyl)-3-yl)-9H-indazole (3-CzTRZ) and 2,5-double At least one of (carbazol-9-yl)-1,4-dicyanobenzene (CzTPN), the guest material comprising at least one of DFDB-QA and DMeDB-QA, said without thermal excitation
  • Fluorescent materials that delay fluorescence characteristics include 4,4'-bis(N-carbazole)-1,1'-biphenyl (DBP).
  • a fluorescence emission spectrum of the thermally excited delayed fluorescent material at least partially overlaps with the quantum dot luminescent material absorption spectrum, and an area of the overlapping portion occupies the guest material
  • the fluorescence emission spectrum is more than 30% of the area.
  • the quantum dot luminescent material includes at least one of a red light quantum dot, a green light quantum dot, and a blue light quantum dot.
  • the red light quantum dot has a maximum light emission wavelength of 550-650 nm
  • the green light quantum dot maximum light emission wavelength is 480-550 nm
  • the blue light quantum dot maximum light emission wavelength It is 400-480nm.
  • the quantum dot luminescent material It is a zinc sulfide having a core/shell structure.
  • the quantum dot luminescent material surface has a ligand selected from the group consisting of a phosphate ligand, a sulfhydryl ligand, and a carboxylic acid ligand.
  • the thermally excited delayed fluorescent material forms an energy transfer layer on one side or both sides of the light emitting layer, and the energy transfer layer is in contact with the light emitting layer
  • the thickness of the energy transfer layer is between 3 and 80 nm.
  • the quantum dot light-emitting device further includes at least one of the following: hole injection sequentially disposed between the anode layer and the light-emitting layer a layer, a hole transport layer, and a hole blocking layer; and an electron injection layer, an electron transport layer, and a puncture barrier layer disposed in sequence between the cathode layer and the light emitting layer.
  • the substrate is an array substrate, and the anode is electrically connected to a switching element in the array substrate.
  • Embodiments of the present disclosure also provide a method of fabricating a quantum dot light emitting device, comprising: providing a substrate; sequentially forming a first electrode layer, a light emitting layer, a second electrode layer, and an encapsulation layer on the substrate, wherein the emitting The layer includes a quantum dot luminescent material, the method further comprising disposing a fluorescent material between the first electrode layer and the second electrode layer, the fluorescent material comprising a thermally excited delayed fluorescent material; the first electrode layer and the One of the second electrode layers is an anode layer, and the other of the first electrode layer and the second electrode layer is a cathode layer.
  • the fluorescent material is disposed between the first electrode layer and the second electrode layer, and the fluorescent material includes a thermally excited delayed fluorescent material including the following two At least one of: co-doping the fluorescent material with the quantum dot luminescent material to form the luminescent layer; and, the fluorescent material forms an energy transfer layer on one or both sides of the luminescent layer, the energy The transfer layer is in contact with the luminescent layer.
  • Embodiments of the present disclosure also provide a display substrate including the quantum dot light emitting device as described above, wherein a plurality of the quantum dot light emitting devices are arranged in an array form.
  • Embodiments of the present disclosure also provide a display substrate including the display substrate as described above.
  • FIG. 1 is a schematic structural diagram of an OLED device according to an embodiment of the present invention.
  • FIG. 2 is a schematic structural diagram of an OLED device according to another embodiment of the present invention.
  • FIG. 3 is a schematic structural diagram of an OLED device according to another embodiment of the present invention.
  • FIG. 4 is a schematic structural diagram of an OLED device according to another embodiment of the present invention.
  • FIG. 5 is a schematic structural diagram of an OLED device according to another embodiment of the present invention.
  • the existing practice of optimizing quantum dot light-emitting devices is to start with carrier injection and transmission, and select a suitable hole injection layer HIL, hole transport layer HTL, electron transport layer ETL, electron injection layer EIL, etc. Optimize the structure of the device and improve the performance of the device.
  • the TADF mechanism utilizes a small organic material with a relatively small singlet-triplet energy level difference ( ⁇ E ST ), and its triplet excitons can be transformed by reverse intersystem crossing (RISC) process under ambient heat.
  • the quantum efficiency of the device can reach 100%. More specifically, taking the TADF material as the main body and the guest doping material as an example, in the case of electrical injection, the ratio of the singlet excited state and the triplet excited state generated in the TADF host material is 1:3.
  • the TADF host material with a small singlet-triplet energy level difference ( ⁇ E ST ) is converted into a singlet excited state by the reverse intersystem crossing (RISC) process under the action of ambient thermal energy.
  • the dominant mechanism of energy transfer between host molecules and guest molecules is long-range Foster-type energy transfer, that is, single-single-single-state energy transfer.
  • the guest molecule can not only obtain the energy of the directly generated singlet excited state of the host, but also the energy of the triplet excitons converted into singlet excitons via the RISC process. In theory, the internal quantum efficiency can also be achieved. 100%. It can be seen that the excitons generated by TADF transfer energy to the quantum dot luminescent layer, which can enhance the luminescence of the quantum dots.
  • FIG. 1 is a schematic structural diagram of a quantum dot light emitting device according to an embodiment of the present invention.
  • the quantum dot light-emitting device includes, for example, a substrate 100 and a first electrode layer 101, a light-emitting layer 102, a second electrode layer 103, and an encapsulation layer 104 which are sequentially formed on the substrate 100.
  • the luminescent layer 102 includes a quantum dot luminescent material, and a fluorescent material is disposed between the first electrode layer 101 and the second electrode layer 103, and the fluorescent material includes a Thermally Activated Delayed Fluorescence (TADF) material;
  • the first electrode layer 101 is an anode layer or a cathode layer and correspondingly the second electrode layer 103 is a cathode layer or an anode layer.
  • TADF Thermally excited delayed fluorescent
  • the fluorescent material The inclusion of a thermally excited delayed fluorescent material means that the fluorescent material contains at least one thermally excited delayed fluorescent material, but may also contain other fluorescent materials.
  • FIG. 2 is a schematic structural diagram of another quantum dot light emitting device according to an embodiment of the present invention.
  • the quantum dot light emitting device includes, for example, a substrate 200 and a first electrode layer 201, an energy transfer layer 205, a light emitting layer 202, a second electrode layer 203, and an encapsulation layer 204 which are sequentially formed on the substrate 200.
  • the luminescent layer 202 is formed of a quantum dot luminescent material
  • the fluorescent material including the thermally excited delayed fluorescent (TADF) material forms an energy transfer layer 205 in contact with the luminescent layer 202.
  • TADF thermally excited delayed fluorescent
  • FIG. 3 is a schematic structural diagram of another quantum dot light emitting device according to an embodiment of the present invention.
  • the quantum dot light emitting device includes, for example, a substrate 300 and a first electrode layer 301, a first energy transfer layer 305, a light emitting layer 302, a second energy transfer layer 306, and a second electrode layer 303, which are sequentially formed on the substrate 300, and Encapsulation layer 304.
  • the luminescent layer 302 is formed of a quantum dot luminescent material
  • the fluorescent material including the thermally excited delayed fluorescent (TADF) material forms a first energy transfer layer 305 and a second energy transfer in contact with the luminescent layer 302.
  • Layer 306 the fluorescent material including the thermally excited delayed fluorescent
  • FIG. 4 is a schematic structural diagram of another quantum dot light emitting device according to an embodiment of the present invention.
  • the quantum dot light emitting device includes, for example, a substrate 400 and a first electrode layer 401, a first energy transfer layer 405, a light emitting layer 402, a second energy transfer layer 406, and a second electrode layer 403 which are sequentially formed on the substrate 400.
  • a thermally excited delayed fluorescent (TADF) material is co-doped with the quantum dot luminescent material to form the luminescent layer 402, and a thermally excited delayed fluorescent (TADF) material forms a first contact with the luminescent layer 402.
  • FIG. 5 is a schematic structural diagram of another quantum dot light emitting device according to an embodiment of the present invention.
  • the quantum dot light-emitting device includes, for example, a substrate 500 and a first electrode layer 501, a hole injection layer 508, a hole transport layer 509, a hole blocking layer 510, a light-emitting layer 502, and an electron blocking layer which are sequentially formed on the substrate 500.
  • a thermally excited delayed fluorescent (TADF) material is co-doped with a quantum dot luminescent material to form the light emitting layer 502, the first electrode layer 501 is an anode layer, and the second electrode layer 503 is a cathode layer.
  • TADF thermally excited delayed fluorescent
  • the hole injection layer 508, the hole transport layer 509, the electron transport layer 512, the electron injection layer 513, the hole blocking layer 510, and the electron blocking layer 511 are not necessary, and may be increased or decreased according to actual conditions. .
  • the thermally excited retardation fluorescent material may, for example, be a compound having ⁇ S, T ⁇ 0.1 eV.
  • the fluorescent material may be composed of, for example, a single thermally excited delayed fluorescent material.
  • the thermally excited delayed fluorescent material can be 2,4,5,6-tetrakis(9-carbazolyl)-isophthalonitrile (4CzIPN).
  • the thermally excited delayed fluorescent material may also be a mixture comprising a host material and a guest material, for example, the host material is selected from the group consisting of 1,2-dicarbazole-4,5-dicyanobenzene (2-CzPN).
  • the thermally excited delayed fluorescent material may further comprise a fluorescent material having no thermal excitation delayed fluorescent properties
  • the host material is selected from the group consisting of 1,2-dicarbazole-4,5-dicyanobenzene ( 2-CzPN), (3'-(4,6-diphenyl-1,3,5-triazin-2-yl)-(1,1'-biphenyl)-3-yl)-9H-indole
  • the guest material selected from the group consisting of DFDB-QA, DMeDB-QA
  • At least one of the fluorescent materials having no thermal excitation delayed fluorescence characteristics includes 4,4'-bis(N-carbazole)-1,1'-biphenyl (DBP).
  • the quantum dot luminescent material may select red light quantum dots, green light quantum dots, and blue light quantum dots as needed.
  • the red light quantum dot has a maximum light emission wavelength of 550-650 nm
  • the green light quantum dot has a maximum light emission wavelength of 480-550 nm
  • the blue light quantum dot has a maximum light emission wavelength of 400-480 nm
  • the quantum dot light emitting material may It is a zinc sulfide having a core/shell structure.
  • the selection criteria of the thermal excitation delay fluorescent material mainly lies in matching the energy level of the thermal excitation delay fluorescent material with the energy level of the quantum dot luminescent material. This makes the transfer of energy from the thermal excitation delayed fluorescent material vector sub-point luminescent material more efficient.
  • the fluorescence emission spectrum of the thermally excited delayed fluorescent material at least partially overlaps with the quantum dot luminescent material absorption spectrum, and the area of the overlapping portion accounts for 30% or more and 40% or more of the fluorescence emission spectral area of the guest material. 50% or more, 60% or more, 70% or more, or 80% or more.
  • the surface of the quantum dot luminescent material has a ligand selected, for example, from the group consisting of a phosphate ligand, a sulfhydryl ligand, and a carboxylic acid ligand. Since the quantum dots are easily agglomerated and the luminescence is quenched, the ligand is attached to the surface of the quantum dot luminescent material, which can effectively prevent the agglomeration of the quantum dots, improve the luminescence efficiency, and can slow down the decomposition of the quantum dot luminescent material.
  • the energy transfer layer has a thickness of between 3 and 80 nm, or between 5 and 50 nm, or between 10 and 30 nm.
  • the thickness of the energy transfer layer should be set for the efficient transfer of energy. If the thickness is too large, the excitons cannot be efficiently transferred to the quantum dot luminescent material; if the thickness is too small, the effect of the energy transfer layer is limited.
  • the hole injection layer may be, for example, a triphenylamine compound or an organic layer having a P-type doping or a polymer such as tris-[4-(5-phenyl-2-thiophene).
  • the hole injection layer may have a thickness of, for example, 1 to 100 nm, or 10 to 50 nm.
  • the hole transport layer may be, for example, an aromatic diamine compound, a triphenylamine compound, an aromatic triamine compound, a biphenyldiamine derivative, a triarylamine polymer, and a carbazole polymer. production. Such as NPB, TPD, TCTA and polyvinyl carbazole or their monomers.
  • the hole transport layer may have a thickness of, for example, 20 to 200 nm, or 30 to 80 nm.
  • the electron transport layer may be, for example, a phenanthroline derivative, an oxazole derivative, a thiazole derivative, an imidazole derivative, a metal complex, or a hydrazine derivative.
  • the electron transport layer thickness may be, for example, 20 to 500 nm, or 50 to 100 nm.
  • an alkali metal oxide, an alkali metal fluoride, or the like can be used as the electron injecting layer.
  • the alkali metal oxide includes lithium oxide (Li 2 O), lithium boron oxide (LiBO), potassium oxychloride (K 2 SiO 3 ), cesium carbonate (Cs 2 CO 3 ), and the like;
  • alkali metal fluoride includes lithium fluoride (LiF) ), sodium fluoride (NaF), and the like.
  • the thickness of the electron injecting layer may be, for example, 0.5 to 3 nm.
  • Some embodiments of the present invention also provide a display substrate comprising a plurality of the above-described quantum dot light emitting devices arranged in an array. Some embodiments of the present invention also provide a display device including the above display substrate.
  • Embodiments of the present invention also provide a method of fabricating a quantum dot light emitting device, comprising: providing a substrate; forming a first electrode layer, a light emitting layer, a second electrode layer, and an encapsulation layer sequentially on the substrate, wherein the emitting The layer includes a quantum dot luminescent material, the method further comprising the first electrode layer and A fluorescent material is disposed between the second electrode layers, the fluorescent material comprising a Thermally Activated Delayed Fluorescence (TADF) material; the first electrode layer is an anode layer or a cathode layer and correspondingly the second electrode layer It is a cathode layer or an anode layer.
  • TADF Thermally Activated Delayed Fluorescence
  • the fluorescent material is disposed between the first electrode layer and the second electrode layer, and the fluorescent material includes a Thermally Activated Delayed Fluorescence (TADF) material including the following two At least one of: co-doping the fluorescent material with the quantum dot luminescent material to form the luminescent layer; and the fluorescent material forming an energy transfer layer on one or both sides of the luminescent layer, the energy transfer layer Contact with the luminescent layer.
  • TADF Thermally Activated Delayed Fluorescence
  • the layer structure of the quantum dot light-emitting device can be fabricated by a conventional method.
  • the anode layer, the hole injection layer, the hole transport layer, the light-emitting layer, the electron transport layer, the electron injection layer, and the cathode layer may be deposited by a solution method.
  • the selection of a suitable solvent to deposit another layer on each layer protects the previously deposited layer from damage.
  • the deposition method can be carried out, for example, by spin coating, spray coating or printing techniques, or can be carried out, for example, by sputtering, electron beam evaporation, vacuum evaporation or chemical vapor deposition.
  • Embodiment 1 The device structure is:
  • the production steps include:
  • PEDOT:PSS was spin-coated on the cleaned glass substrate at 3500 rpm in air, and the spin coating time was 45 s. After spin coating, it is annealed in air at 120 ° C for 20 minutes to dry the non-volatile liquid;
  • the production of the light-emitting layer is composed of DPEPOCz: FIrpic: QD co-doping, wherein DPEPOCz: FIrpic constitutes a TADF system to form excitons, and the exciton energy is transferred to the quantum dot luminescent material;
  • the spin-coated device is placed in a vacuum evaporation chamber, evaporating LiF;

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Abstract

一种量子点发光器件及其制备方法、显示基板和显示装置。该量子点发光器件包括：基板以及依次形成在基板上的第一电极层、发光层、第二电极层和封装层，其中，发光层包括量子点发光材料，第一电极层和第二电极层之间设置有荧光材料，该荧光材料包括热激发延迟荧光(Thermally Activated Delayed Fluorescence,TADF)材料；第一电极层和第二电极层之一为阳极层，相应的第一电极层和第二电极层中的另一者为阴极层。

Description

量子点发光器件及其制备方法、显示基板和显示装置 技术领域
本公开涉及量子点发光器件及其制备方法、显示基板和显示装置。
背景技术
量子点(Quantum Dot)是在把导带电子、价带空穴及激子在三个空间方向上束缚住的半导体纳米结构。例如，可以是一种由II－VI族或III－V族元素组成的纳米颗粒。量子点的粒径一般介于1-10nm之间，由于电子和空穴被量子限域，连续的能带结构变成具有分子特性的分立能级结构，受激后可以发射荧光。基于量子效应，量子点在太阳能电池、发光器件、光学生物标记等领域具有广泛的应用前景。科学家已经发明许多不同的方法来制造量子点，并预期这种纳米材料在二十一世纪的纳米电子学(nano-electronics)上有极大的应用潜力。
量子点电致发光器件的激励机制主要有两种方式：一种是载流子的直接注入，即空穴从空穴传输层注入到量子点发光层，电子从电子传输层注入到量子点发光层，空穴和电子在量子点发光层内复合成激子发光；另一种是能量传递的方式，即在传输层形成的激子将能量直接传递给量子点进而发光。
典型的量子点发光二极管结构包括一个空穴注入层、一个空穴传输层、一个电子传输层、一个量子点发光层，这些电子传输层、空穴传输层、空穴注入层可以是有机小分子、有机聚合物，也可以是无机金属氧化物。但是，由于量子点的价带远远低于空穴传输层的最高已占有轨道(HOMO)能级，空穴的注入能力差，导致载流子不平衡，引起漏电流和器件的降解，从而影响器件的发光效率和寿命。
发明内容
本公开的实施例提供了一种量子点发光器件，包括：基板以及依次形成在所述基板上的第一电极层、发光层、第二电极层和封装层，其中，所述发光层包括量子点发光材料，所述第一电极层和第二电极层之间设置有荧光材 料，所述荧光材料包括热激发延迟荧光材料；所述第一电极层和所述第二电极层之一为阳极层，所述第一电极层和所述第二电极层中的另一者为阴极层。
在本公开提供的所述的量子点发光器件中，例如，所述量子点发光器件满足下述两个条件至少之一：所述荧光材料与所述量子点发光材料共掺杂形成所述发光层；和，所述荧光材料在所述发光层一侧或两侧形成能量传递层，所述能量传递层与所述发光层相接触。
在本公开提供的所述的量子点发光器件中，例如，所述荧光材料由单一的热激发延迟荧光材料组成。
在本公开提供的所述的量子点发光器件中，例如，所述热激发延迟荧光材料为2,4,5,6-四(9-咔唑基)-间苯二腈(4CzIPN)。
在本公开提供的所述的量子点发光器件中，例如，所述热激发延迟荧光材料为包括主体材料和客体材料的混合物。
在本公开提供的所述的量子点发光器件中，例如，所述荧光材料还包括不具有热激发延迟荧光特性的荧光材料。
在本公开提供的所述的量子点发光器件中，例如，所述主体材料包括1,2-二咔唑-4，5-二氰基苯(2-CzPN)、(3'-(4,6-二苯基-1,3,5-三嗪-2-基)-(1,1'-联苯)-3-基)-9H-咔唑(3-CzTRZ)和2,5-双(咔唑-9-基)-1,4-二氰基苯(CzTPN)中的至少一种，所述客体材料包括DFDB-QA和DMeDB-QA中的至少一种，所述不具有热激发延迟荧光特性的荧光材料包括4,4'-双(N-咔唑)-1,1'-联苯(DBP)。
在本公开提供的所述的量子点发光器件中，例如，所述热激发延迟荧光材料的荧光发射光谱与所述量子点发光材料吸收光谱至少部分重叠，且重叠部分的面积占所述客体材料的荧光发射光谱面积的30％以上。
在本公开提供的所述的量子点发光器件中，例如，所述量子点发光材料包括红光量子点、绿光量子点和蓝光量子点中的至少一种。
在本公开提供的所述的量子点发光器件中，例如，所述红光量子点最大发光波长为550-650nm、所述绿光量子点最大发光波长为480-550nm、所述蓝光量子点最大发光波长为400-480nm。
在本公开提供的所述的量子点发光器件中，例如，所述量子点发光材料 是具有核/壳结构的硫化锌。
在本公开提供的所述的量子点发光器件中，例如，所述量子点发光材料表面具有配体，所述配体选自由磷酸根配体、巯基配体和羧酸配体组成的组。
在本公开提供的所述的量子点发光器件中，例如，所述热激发延迟荧光材料在所述发光层一侧或两侧形成能量传递层，所述能量传递层与所述发光层相接触，所述能量传递层的厚度在3-80nm之间。
在本公开提供的所述的量子点发光器件中，例如，所述量子点发光器件还包括下述两者至少之一：在所述阳极层和所述发光层之间依次设置的空穴注入层、空穴传输层和空穴阻挡层；和，在所述阴极层和所述发光层之间依次设置的电子注入层、电子传输层和点子阻挡层。
在本公开提供的所述的量子点发光器件中，例如，所述基板为阵列基板，所述阳极与所述阵列基板中的开关元件相电连接。
本公开的实施例还提供一种制备量子点发光器件的方法，包括：提供基板；在所述基板上依次形成第一电极层、发光层、第二电极层和封装层，其中，所述发光层包括量子点发光材料，所述方法还包括在所述第一电极层和第二电极层之间设置荧光材料，所述荧光材料包括热激发延迟荧光材料；所述第一电极层和所述第二电极层之一为阳极层，所述第一电极层和所述第二电极层中的另一者为阴极层。
在本公开提供的所述的量子点发光器件中，例如，所述在所述第一电极层和第二电极层之间设置荧光材料，所述荧光材料包括热激发延迟荧光材料包括下述两者至少之一：将所述荧光材料与所述量子点发光材料共掺杂形成所述发光层；和，所述荧光材料在所述发光层一侧或两侧形成能量传递层，所述能量传递层与所述发光层相接触。
本公开的实施例还提供一种显示基板，包括如上所述的量子点发光器件，其中多个所述量子点发光器件布置成阵列的形式。
本公开的实施例还提供一种显示基板，包括如上所述的显示基板。
附图说明
为了更清楚地说明本发明实施例的技术方案，下面将对实施例的附图作 简单地介绍，显而易见地，下面描述中的附图仅仅涉及本发明的一些实施例，而非对本发明的限制。
图1为本发明一实施例提供的OLED器件结构示意图；
图2为本发明又一实施例提供的OLED器件结构示意图；
图3为本发明又一实施例提供的OLED器件结构示意图；
图4为本发明又一实施例提供的OLED器件结构示意图；
图5为本发明又一实施例提供的OLED器件结构示意图。
具体实施方式
为使本发明实施例的目的、技术方案和优点更加清楚，下面将结合本发明实施例的附图，对本发明实施例的技术方案进行清楚、完整地描述。显然，所描述的实施例是本发明的一部分实施例，而不是全部的实施例。基于所描述的本发明的实施例，本领域普通技术人员在无需创造性劳动的前提下所获得的所有其他实施例，都属于本发明保护的范围。
除非另作定义，此处使用的技术术语或者科学术语应当为本发明所属领域内具有一般技能的人士所理解的通常意义。本发明专利申请说明书以及权利要求书中使用的“第一”、“第二”以及类似的词语并不表示任何顺序、数量或者重要性，而只是用来区分不同的组成部分。同样，“一个”或者“一”等类似词语也不表示数量限制，而是表示存在至少一个。
本文涉及的化合物的结构式如下：
2-CzPN)
Figure PCTCN2016107830-appb-000001
3-CzTRZ：(3′-(4,6-diphenyl-1,3,5-triazin-2-yl)-(1,1′ -biphenyl)-3-yl)-9-carbazole
Figure PCTCN2016107830-appb-000002
CzTPN：2,5-双(咔唑-9-)-1,4-二氰基苯，2,5-bis(carbazol-9-yl)-1,4-dicyanobenzene
DFDB-QA
Figure PCTCN2016107830-appb-000003
DMeDB-QA
Figure PCTCN2016107830-appb-000004
DBP
现有的比较普遍的优化量子点发光器件的做法是从载流子的注入、传输入手，选择合适的空穴注入层HIL、空穴传输层HTL、电子传输层ETL、电子注入层EIL等来优化器件的结构、提高器件的性能。
TADF机制是利用具有比较小的单重态—三重态能级差(ΔEST)的有机小分子材料，其三重态激子在环境热能下可以通过反向系间窜越(RISC)这一过程转化为单重态激子的机制。理论上其器件内量子效率能达到100％。更具体地说，以TADF材料为主体、客体掺杂材料为例，在电注入情况下，在TADF主体材料中生成的单重激发态和三重激发态的比例为1：3。具有较小的单重态-三重态能级差(ΔEST)的TADF主体材料在环境热能的作用下，其三重激发态能通过反向系间窜越(RISC)过程转化为单重激发态。当TADF主体材料与量子点发光材料具有良好的能量匹配关系时，主体分子至客体分子间能量转移的主导机制为长程Foster型能量转移，即单重态-单重态能量转移的方式。基于上述原理，客体分子不仅可以获得直接生成的主体单重激发态的能量，也可以获得经由RISC过程转化为单重态激子的三重态激子的能量，理论上其内量子效率也能达到100％。可见，利用TADF产生的激子将能量传递给量子点发光层，可以使量子点的发光增强。
图1是本发明实施例提供的一种量子点发光器件结构示意图。该量子点发光器件例如包括：基板100以及依次形成在所述基板100上的第一电极层101、发光层102、第二电极层103和封装层104。所述发光层102包括量子点发光材料，所述第一电极层101和第二电极层103之间设置有荧光材料，所述荧光材料包括热激发延迟荧光(Thermally Activated Delayed Fluorescence,TADF)材料；所述第一电极层101为阳极层或阴极层并且相应地所述第二电极层103为阴极层或阳极层。在本实施例中，热激发延迟荧光(TADF)材料与量子点发光材料共掺杂形成所述发光层102。所述荧光材 料包括热激发延迟荧光材料是指：所述荧光材料至少含有一种热激发延迟荧光材料，但还可以含有其他荧光材料。
图2是本发明实施例提供的另一种量子点发光器件结构示意图。该量子点发光器件例如包括：基板200以及依次形成在所述基板200上的第一电极层201、能量传递层205、发光层202、第二电极层203和封装层204。在本实施例中，发光层202由量子点发光材料形成，而包括热激发延迟荧光(TADF)材料的荧光材料形成与所述发光层202相接触的能量传递层205。
图3是本发明实施例提供的另一种量子点发光器件结构示意图。该量子点发光器件例如包括：基板300以及依次形成在所述基板300上的第一电极层301、第一能量传递层305、发光层302、第二能量传递层306、第二电极层303和封装层304。在本实施例中，发光层302由量子点发光材料形成，而包括热激发延迟荧光(TADF)材料的荧光材料形成与所述发光层302相接触的第一能量传递层305和第二能量传递层306。
图4是本发明实施例提供的另一种量子点发光器件结构示意图。该量子点发光器件例如包括：基板400以及依次形成在所述基板400上的第一电极层401、第一能量传递层405、发光层402、第二能量传递层406、第二电极层403和封装层404。在本实施例中，热激发延迟荧光(TADF)材料与量子点发光材料共掺杂形成所述发光层402，并且热激发延迟荧光(TADF)材料形成与所述发光层402相接触的第一能量传递层405和第二能量传递层406。
图5是本发明实施例提供的另一种量子点发光器件结构示意图。该量子点发光器件例如包括：基板500以及依次形成在所述基板500上的第一电极层501、空穴注入层508、空穴传输层509、空穴阻挡层510、发光层502、电子阻挡层511、电子传输层512、电子注入层513、第二电极层503和封装层504。在本实施例中，热激发延迟荧光(TADF)材料与量子点发光材料共掺杂形成所述发光层502，第一电极层501为阳极层，第二电极层503为阴极层。应当理解的是，上述空穴注入层508、空穴传输层509、电子传输层512、电子注入层513、空穴阻挡层510、电子阻挡层511都不是必需的，可以根据实际情况增加或者减少。
在上述实施方式中，所述热激发延迟荧光材料例如可以选则ΔS，T＜0.1eV 的化合物。在上述实施方式中，所述荧光材料例如可以由单一的热激发延迟荧光材料组成。例如，所述热激发延迟荧光材料可以是2,4,5,6-四(9-咔唑基)-间苯二腈(4CzIPN)。或者，所述热激发延迟荧光材料也可以为包括主体材料和客体材料的混合物，例如，所述主体材料选自1,2-二咔唑-4，5-二氰基苯(2-CzPN)、(3'-(4,6-二苯基-1,3,5-三嗪-2-基)-(1,1'-联苯)-3-基)-9H-咔唑(3-CzTRZ)、2,5-双(咔唑-9-基)-1,4-二氰基苯(CzTPN)的至少一种，所述客体材料选自DFDB-QA、DMeDB-QA的至少一种。又或者，所述热激发延迟荧光材料还可以进一步包括不具有热激发延迟荧光特性的荧光材料，例如，所述主体材料选自1,2-二咔唑-4，5-二氰基苯(2-CzPN)、(3'-(4,6-二苯基-1,3,5-三嗪-2-基)-(1,1'-联苯)-3-基)-9H-咔唑(3-CzTRZ)、2,5-双(咔唑-9-基)-1,4-二氰基苯(CzTPN)的至少一种，所述客体材料选自DFDB-QA、DMeDB-QA的至少一种，所述不具有热激发延迟荧光特性的荧光材料包括4,4'-双(N-咔唑)-1,1'-联苯(DBP)。
在上述实施方式中，所述量子点发光材料可以根据需要选择红光量子点、绿光量子点和蓝光量子点。例如，所述红光量子点最大发光波长为550-650nm、所述绿光量子点最大发光波长为480-550nm、所述蓝光量子点最大发光波长为400-480nm；例如，所述量子点发光材料可以是具有核/壳结构的硫化锌。
由于热激发延迟荧光材料的主要作用在于增强能量向量子点发光材料的传递，因此，热激发延迟荧光材料的选择标准主要在于让热激发延迟荧光材料的能级与量子点发光材料的能级匹配，使得能量从热激发延迟荧光材料向量子点发光材料的传递更加有效。例如，所述热激发延迟荧光材料的荧光发射光谱与所述量子点发光材料吸收光谱至少部分重叠，且重叠部分的面积占所述客体材料的荧光发射光谱面积的30％以上、40％以上、50％以上、60％以上、70％以上或80％以上。
在上述实施方式中，例如，量子点发光材料表面具有配体，所述配体例如选自由磷酸根配体、巯基配体和羧酸配体组成的组。由于量子点容易团聚而导致发光淬灭，在量子点发光材料表面连接配体，可以有效防止量子点的团聚而提高发光效率，并且能够减缓量子点发光材料的分解。
在上述实施方式中，例如，所述能量传递层的厚度在3-80nm之间、或5-50nm之间、或10-30nm之间。能量传递层厚度的设置应当以能量的高效传递为目标，厚度过大，则激子无法有效地传递给量子点发光材料；厚度过小，则能量传递层发挥的作用又受到限制。
在上述实施方式中，例如，空穴注入层例如可采用三苯胺化合物或者是有P型掺杂的有机层或者是聚合物制成，如三-[4-(5-苯基-2-噻吩基)苯]胺、4,4’,4”-三[2-萘基(苯基)氨基]三苯胺(2-TNATA)或者4,4’,4”-三-(3-甲基苯基苯胺基)三苯胺(m-MTDATA)、酞箐铜(CuPc)、Pedot:Pss、TPD或F4TCNQ。空穴注入层厚度例如可以为1-100nm，或者10-50nm。
在上述实施方式中，例如，空穴传输层例如可采用芳香族二胺类化合物、三苯胺化合物、芳香族三胺类化合物、联苯二胺衍生物、三芳胺聚合物以及咔唑类聚合物制成。如NPB、TPD、TCTA以及聚乙烯咔唑或者其单体。空穴传输层厚度例如可以为20-200nm，或者30-80nm。
在上述实施方式中，例如，电子传输层例如可采用邻菲罗林衍生物，噁唑衍生物，噻唑衍生物，咪唑衍生物，金属配合物，蒽的衍生物。具体示例包括：8-羟基喹啉铝(Alq3)、8-羟基喹啉锂(Liq)、8-羟基喹啉镓、双[2-(2-羟基苯基-1)-吡啶]铍、2-(4-二苯基)-5-(4-叔丁苯基)-1,3,4-噁二唑(PBD)、1,3,5-三(N-苯基-2-苯并咪唑-2)苯(TPBI)、BCP、Bphen等。电子传输层厚度例如可以为20-500nm，或者50-100nm。
在上述实施方式中，例如，电子注入层例如可以采用碱金属氧化物、碱金属氟化物等。碱金属氧化物包括氧化锂(Li2O)、氧化锂硼(LiBO)、硅氧化钾(K2SiO3)、碳酸铯(Cs2CO3)等；碱金属氟化物包括氟化锂(LiF)、氟化钠(NaF)等。电子注入层厚度例如可以为0.5-3nm。
本发明的一些实施例还提供了一种显示基板，包括呈阵列形式排布的多个上述量子点发光器件。本发明的一些实施例还提供了一种显示装置，包括上述显示基板。
本发明的实施例还提供一种制备量子点发光器件的方法，包括：提供基板；在所述基板上依次形成第一电极层、发光层、第二电极层和封装层，其中，所述发光层包括量子点发光材料，所述方法还包括在所述第一电极层和 第二电极层之间设置荧光材料，所述荧光材料包括热激发延迟荧光(Thermally Activated Delayed Fluorescence,TADF)材料；所述第一电极层为阳极层或阴极层并且相应地所述第二电极层为阴极层或阳极层。
在上述方法中，例如，所述在所述第一电极层和第二电极层之间设置荧光材料，所述荧光材料包括热激发延迟荧光(Thermally Activated Delayed Fluorescence,TADF)材料包括下述两者至少之一：将所述荧光材料与所述量子点发光材料共掺杂形成所述发光层；和所述荧光材料在所述发光层一侧或两侧形成能量传递层，所述能量传递层与所述发光层相接触。
上述实施方式中，量子点发光器件的各层结构可采用常规方法制作。例如，可以采用溶液方法沉积阳极层、空穴注入层、空穴传输层、发光层、电子传输层、电子注入层、阴极层。选择合适溶剂，在每一层上沉积另外一层，都可以保护在先沉积的层不被破坏。沉积方法例如可以采用旋涂、喷涂或印刷技术实施，或者例如还可以采用溅射、电子束蒸发、真空蒸镀或化学气相沉积实施。
以下将结合实施例进一步说明本发明实施例提供的量子点发光器件的制作过程。
实施例1：器件结构为：
[ITO/PEDOT:PSS/poly-TPD/PVK/DPEPOCz:FIrpic:QD/ZnO/LiF/Al]
制作步骤包括：
1)、清洗含ITO透明电极(阳极)的玻璃衬底：用去离子水和乙醇清洗并且超声处理20分钟，然后用氮气枪迅速吹干，再臭氧处理10分钟，以清洁ITO表面，并提升ITO电极的功函数；
2)、空穴注入层的制作：于空气中，在清洁后的玻璃衬底上以3500转/分钟的转速旋涂PEDOT:PSS，旋涂时间为45s。旋涂完后在空气中120℃退火20分钟，烘干未挥发完的液体；
3)、空穴传输层的制作：转移入手套箱，在PEDOT:PSS层上以2500转/分钟的转速旋涂poly-TPD溶液(浓度为10mg/ml)，旋涂时间为45s。旋涂完成后在手套箱中110℃退火30分钟形成poly-TPD层；
4)、空穴阻挡层的制作：在poly-TPD层上以2000转/分钟的转速旋涂 PVK溶液(浓度为2mg/ml)，旋涂时间为45s。旋涂完成后在手套箱中170℃退火30分钟形成PVK层；
5)、发光层的制作：发光层由DPEPOCz:FIrpic:QD共掺组成，其中DPEPOCz:FIrpic组成TADF体系形成激子，并将激子能量传递给量子点发光材料；
6)、电子传输层的制作：在EML层上以2000转/分钟的转速旋涂ZnO溶液(浓度为30mg/ml)，旋涂时间为45s；
7)、电子注入层的制作：将旋涂完成的器件放入真空蒸镀腔体中，蒸镀LiF；
8)、阴极的制作：在LiF层上蒸镀阴极铝，得到量子点发光器件。
以上所述仅是本发明的示范性实施方式，而非用于限制本发明的保护范围，本发明的保护范围由所附的权利要求确定。
本申请要求于2016年2月18日递交的中国专利申请第201610091388.X以及于2016年4月15日递交的中国专利申请第201610237544.9号的优先权，在此全文引用上述中国专利申请公开的内容以作为本申请的一部分。

Claims (21)

  1. 一种量子点发光器件，包括：基板以及依次形成在所述基板上的第一电极层、发光层、第二电极层和封装层，
    其中，所述发光层包括量子点发光材料，所述第一电极层和所述第二电极层之间设置有荧光材料；所述第一电极层和所述第二电极层之一为阳极层，所述第一电极层和所述第二电极层中的另一者为阴极层。
  2. 根据权利要求1所述的量子点发光器件，其中，所述荧光材料包括热激发延迟荧光材料。
  3. 根据权利要求1或2所述的量子点发光器件，其中，所述量子点发光器件满足下述两个条件至少之一：
    所述荧光材料与所述量子点发光材料共掺杂形成所述发光层；和
    所述荧光材料在所述发光层一侧或两侧形成能量传递层，所述能量传递层与所述发光层相接触。
  4. 根据权利要求2所述的量子点发光器件，其中，所述荧光材料由单一的热激发延迟荧光材料组成。
  5. 根据权利要求4所述的量子点发光器件，其中，所述热激发延迟荧光材料为2,4,5,6-四(9-咔唑基)-间苯二腈(4CzIPN)。
  6. 根据权利要求2或3所述的量子点发光器件，其中所述热激发延迟荧光材料为包括主体材料和客体材料的混合物。
  7. 根据权利要求6所述的量子点发光器件，其中所述荧光材料还包括不具有热激发延迟荧光特性的荧光材料。
  8. 根据权利要求7所述的量子点发光器件，其中所述主体材料包括1,2-二咔唑-4，5-二氰基苯(2-CzPN)、(3'-(4,6-二苯基-1,3,5-三嗪-2-基)-(1,1'-联苯)-3-基)-9H-咔唑(3-CzTRZ)和2,5-双(咔唑-9-基)-1,4-二氰基苯(CzTPN)中的至少一种，所述客体材料包括DFDB-QA和DMeDB-QA中的至少一种，所述不具有热激发延迟荧光特性的荧光材料包括4,4'-双(N-咔唑)-1,1'-联苯(DBP)。
  9. 根据权利要求2、5、7-8的任一项所述的量子点发光器件，其中所述 热激发延迟荧光材料的荧光发射光谱与所述量子点发光材料吸收光谱至少部分重叠，且重叠部分的面积占所述客体材料的荧光发射光谱面积的30％以上。
  10. 根据权利要求2、5、7-8的任一项所述的量子点发光器件，其中所述量子点发光材料包括红光量子点、绿光量子点和蓝光量子点中的至少一种。
  11. 根据权利要求10所述的量子点发光器件，其中所述红光量子点最大发光波长为550-650nm、所述绿光量子点最大发光波长为480-550nm、所述蓝光量子点最大发光波长为400-480nm。
  12. 根据权利要求2、5、7-8的任一项所述的量子点发光器件，其中所述量子点发光材料是具有核/壳结构的硫化锌。
  13. 根据权利要求2、5、7-8任一项所述的量子点发光器件，其中所述量子点发光材料表面具有配体，所述配体选自磷酸根配体、巯基配体和羧酸配体组成的组。
  14. 根据权利要求2、5、7-8任一项所述的量子点发光器件，其中所述热激发延迟荧光材料在所述发光层一侧或两侧形成能量传递层，所述能量传递层与所述发光层相接触，所述能量传递层的厚度在3-80nm之间。
  15. 根据权利要求2、5、7-8任一项所述的量子点发光器件，还包括下述两者至少之一：
    在所述阳极层和所述发光层之间依次设置的空穴注入层、空穴传输层和空穴阻挡层；和
    在所述阴极层和所述发光层之间依次设置的电子注入层、电子传输层和点子阻挡层。
  16. 根据权利要求2、5、7-8任一项所述的量子点发光器件，其中所述基板为阵列基板，所述阳极与所述阵列基板中的开关元件相电连接。
  17. 一种制备量子点发光器件的方法，包括：
    提供基板；
    在所述基板上依次形成第一电极层、发光层、第二电极层和封装层，
    其中，所述发光层包括量子点发光材料，所述方法还包括在所述第一电极层和所述第二电极层之间设置荧光材料；所述第一电极层和所述第二电极层之一为阳极层，所述第一电极层和所述第二电极层中的另一者为阴极层。
  18. 根据权利要求17所述的方法，其中，所述荧光材料包括热激发延迟荧光材料。
  19. 根据权利要求17或18所述的方法，所述在所述第一电极层和所述第二电极层之间设置荧光材料，所述荧光材料包括热激发延迟荧光材料包括下述两者至少之一：
    将所述荧光材料与所述量子点发光材料共掺杂形成所述发光层；和
    所述荧光材料在所述发光层一侧或两侧形成能量传递层，所述能量传递层与所述发光层相接触。
  20. 一种显示基板，包括如权利要求1-16任一项所述的量子点发光器件，其中多个所述量子点发光器件布置成阵列的形式。
  21. 一种显示装置，包括如权利要求20所述的显示基板。
PCT/CN2016/107830 2016-02-18 2016-11-30 量子点发光器件及其制备方法、显示基板和显示装置 Ceased WO2017140159A1 (zh)

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