WO2017152721A1 - 光耦合连接器、光耦合系统及波导耦合方法 - Google Patents

光耦合连接器、光耦合系统及波导耦合方法 Download PDF

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WO2017152721A1
WO2017152721A1 PCT/CN2017/071703 CN2017071703W WO2017152721A1 WO 2017152721 A1 WO2017152721 A1 WO 2017152721A1 CN 2017071703 W CN2017071703 W CN 2017071703W WO 2017152721 A1 WO2017152721 A1 WO 2017152721A1
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Prior art keywords
waveguides
waveguide
layer
optical
signal light
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English (en)
French (fr)
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魏玉明
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Huawei Technologies Co Ltd
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Huawei Technologies Co Ltd
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Priority to EP17762407.9A priority Critical patent/EP3407106B1/en
Publication of WO2017152721A1 publication Critical patent/WO2017152721A1/zh
Priority to US16/119,361 priority patent/US10680412B2/en
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/24—Coupling light guides
    • G02B6/42—Coupling light guides with opto-electronic elements
    • G02B6/4201—Packages, e.g. shape, construction, internal or external details
    • G02B6/4204—Packages, e.g. shape, construction, internal or external details the coupling comprising intermediate optical elements, e.g. lenses, holograms
    • G02B6/421—Packages, e.g. shape, construction, internal or external details the coupling comprising intermediate optical elements, e.g. lenses, holograms the intermediate optical component consisting of a short length of fibre, e.g. fibre stub
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
    • G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
    • G02B6/12002—Three-dimensional structures
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
    • G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
    • G02B6/122—Basic optical elements, e.g. light-guiding paths
    • G02B6/125—Bends, branchings or intersections
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    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/24—Coupling light guides
    • G02B6/26—Optical coupling means
    • G02B6/30—Optical coupling means for use between fibre and thin-film device
    • G—PHYSICS
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    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
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    • G02B6/42—Coupling light guides with opto-electronic elements
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    • G02B6/4249—Packages, e.g. shape, construction, internal or external details comprising arrays of active devices and fibres
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    • G02B6/42—Coupling light guides with opto-electronic elements
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    • G02B6/4296—Coupling light guides with opto-electronic elements coupling with sources of high radiant energy, e.g. high power lasers, high temperature light sources
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    • H01S5/1032—Coupling to elements comprising an optical axis that is not aligned with the optical axis of the active region
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    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
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    • H01S5/50—Amplifier structures not provided for in groups H01S5/02 - H01S5/30
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    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
    • G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
    • G02B2006/12133—Functions
    • G02B2006/12147—Coupler
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
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    • G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
    • G02B6/122—Basic optical elements, e.g. light-guiding paths
    • G02B6/1228—Tapered waveguides, e.g. integrated spot-size transformers
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    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
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    • G02B6/26—Optical coupling means
    • G02B6/30—Optical coupling means for use between fibre and thin-film device
    • G02B6/305—Optical coupling means for use between fibre and thin-film device and having an integrated mode-size expanding section, e.g. tapered waveguide
    • H—ELECTRICITY
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    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
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    • H01S3/16—Solid materials
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    • H01S3/1603—Solid materials characterised by an active (lasing) ion rare earth
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    • H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
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    • H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
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Definitions

  • the present application relates to the field of communications technologies, and in particular, to an optical coupling connector, an optical coupling system, and a waveguide coupling method.
  • optical fibers are used to transmit signal light
  • optoelectronic chips are used to modulate, route, and multiplex received signal light.
  • a fiber array (including a plurality of optical fibers) is generally used to transmit signal light. Due to manufacturing processes and the like, the spacing between adjacent fibers in the optical fiber array is large, and the optoelectronic chip (including multiple pieces) The spacing between adjacent optical waveguides in the optical waveguide is small, and the optical fibers in the optical fiber array cannot be connected to the optical waveguides in the optoelectronic chip.
  • Optical coupling connector In order to couple the signal light in the optical fiber array to the optoelectronic chip, it is often required to be used.
  • the optical coupling connector is used to connect the optical fiber array and the optoelectronic chip, and input the signal light transmitted by the optical fiber array into the optoelectronic chip.
  • signal light is transmitted in an optical fiber and an optical coupling connector, signal light is lost due to absorption, scattering, and the like.
  • the first solution is to use an Erbium-doped Optical Fiber Amplifier (EDFA) instead of an optical coupling connector in fiber arrays and optoelectronic chips.
  • EDFA Erbium-doped Optical Fiber Amplifier
  • the disadvantage of the first solution is that due to the large volume of the EDFA and the need to use one EDFA separately for each fiber, when the number of fibers in the fiber array is large, the EDFA is used.
  • the coupling is difficult;
  • the second scheme is: integrating a semiconductor optical amplifier (SOA) on an optoelectronic chip, and amplifying the signal light received by the optoelectronic chip through SOA.
  • SOA semiconductor optical amplifier
  • the disadvantage of the second scheme is that The thermal effect of SOA is significant, the temperature controller needs to be installed in the optoelectronic chip, and the integration process on the optoelectronic chip is not compatible because the manufacturing process of the SOA is incompatible with the complementary metal oxide semiconductor (CMOS) process in the optoelectronic chip. The SOA process is more difficult.
  • CMOS complementary metal oxide semiconductor
  • the embodiment of the present application discloses an optical coupling connector, an optical coupling system, and a waveguide coupling method, which can solve the problem that the manufacturing process of the optical coupling connector is complicated.
  • the first aspect of the embodiments of the present application discloses an optical coupling connector for connecting an optical fiber array and an optoelectronic chip, including an upper connector and a lower connector, wherein:
  • the upper layer connector includes N upper layer waveguides, the N is a positive integer greater than or equal to 2; the lower layer connector includes N lower layer waveguides, and the N lower layer waveguides are in one-to-one correspondence with the N upper layer waveguides Coupling, each of the lower layer waveguides includes a coupling waveguide portion, a pitch matching waveguide portion and a signal light amplifying waveguide portion; a pumping light source is connected to the N upper layer waveguides, and the pumping light source provides N paths for the N upper layer waveguides Pumping light, the fiber array includes N fibers, the N fibers providing N signal light for the N lower waveguides, the optoelectronic chip comprising N optical waveguides, the first of the N lower waveguides The second end of the N lower layers of the waveguide is connected in one-to-one correspondence with the N optical waveguides; the N upper waveguides respectively pump the N channels of light Coupling into the corresponding N lower layer waveguides;
  • Each of the lower waveguides includes a first core layer and a first cladding layer covering the first core layer, the material of the first cladding layer comprising a gain material, the gain material capable of the pump The energy of the puppies is transferred to the signal light, and the refractive index of the first core layer is greater than the refractive index of the first cladding layer.
  • the material of the first cladding layer is a gain material, and the signal light can be amplified, and at the same time, the refractive index of the first core layer is greater than the refractive index of the first cladding layer, and the signal beam can be bound in the core layer, thereby reducing Signal transmission loss.
  • the upper layer waveguide i receives one pump light
  • the lower layer waveguide j receives a signal light emitted by the optical fiber array.
  • the upper layer waveguide i couples the one pump light to the coupled waveguide portion of the corresponding lower layer waveguide j, and the coupled waveguide portion of the lower layer waveguide j combines the one pump light with the one signal light
  • the coupling light is transmitted to the pitch matching waveguide portion of the lower layer waveguide j, and the pitch matching waveguide portion of the lower layer waveguide j transmits the coupling light to the signal light amplifying waveguide portion of the lower layer waveguide j, the lower layer waveguide j
  • the signal light amplifying waveguide partially amplifies the one of the coupled light and attenuates the one of the coupled light, and outputs the amplified one of the signal light to the optoelectronic chip;
  • the upper layer waveguide i is any one of the N upper layer waveguides
  • the lower layer waveguide j is any one of the N lower layer waveguides.
  • any two adjacent lower-layer waveguides of the N lower-layer waveguides is equal to the spacing between any two adjacent fibers in the fiber array; the spacing between the second ends of any two adjacent lower waveguides of the N lower layers is The spacing between any two adjacent optical waveguides in the optoelectronic chip is equal.
  • the second possible implementation manner of implementing the first aspect of the embodiments of the present application can reduce coupling loss when signal light is transmitted from the optical fiber array to the lower layer connector, and reduce coupling when signal light is transmitted from the lower layer connector to the optoelectronic chip. loss.
  • the N upper layer waveguides and the N lower layer waveguides are both Rectangular waveguide.
  • the core layer height and the core layer width of the first core layer are satisfied. Single mode transmission conditions.
  • the core layer height and the core layer width of the first core layer satisfy the single mode transmission condition, and the transmission loss of the signal light in the lower layer waveguide can be reduced.
  • the incident direction of the pump light and the upper waveguide i The angle between the cross sections of the signal light is 90°; the angle between the incident direction of the signal light and the cross section of the lower layer waveguide j is 90°; the amplification of the amplified signal light
  • the angle between the direction and the cross section of the optical waveguide in the optoelectronic chip is 90°.
  • the fifth possible implementation manner of implementing the first aspect of the embodiments of the present application can improve the coupling efficiency of the pump light coupled from the pump source to the upper waveguide, and improve the coupling efficiency of the signal light coupling from the fiber array to the lower waveguide.
  • the coupling efficiency of signal light coupling from the underlying waveguide to the optoelectronic chip is increased.
  • the upper layer connector further includes at least one optical beam splitter, each Optical beam splitter for connection Connecting a pumping light source and M upper layer waveguides, each of the optical beam splitters dividing the original pump light emitted by the pumping light source into M pieces of upper layer waveguides, wherein the M is less than or equal to A positive integer of N.
  • the original pump light emitted by the pumping source may be split by the optical beam splitter to adjust the intensity of the pump light in the upper waveguide, and then Adjust the magnification of the signal light in the lower waveguide.
  • each of the upper layer waveguides includes a second core layer and a second cladding layer of the two core layer, the second core layer for transmitting the pump light, the second core layer having a refractive index greater than a refractive index of the second cladding layer, the second The width of the core layer gradually decreases along the direction of propagation of the pump light, and the height of the second core layer remains unchanged.
  • the seventh possible implementation manner of implementing the first aspect of the embodiments of the present application can reduce the transmission loss of the pump light in the upper layer waveguide, and at the same time, the width of the second core layer gradually decreases along the propagation direction of the pump light.
  • the height of the second core layer remains unchanged, and the coupling efficiency of pump light coupling from the upper waveguide to the lower waveguide can be improved.
  • the signal light amplifying waveguide portion has a core layer width less than or equal to The core layer width of the coupled waveguide portion.
  • the optical coupling connector can be better coupled with the optical fiber array and the optoelectronic chip.
  • the signal light amplifying waveguide portion has a core layer length greater than the coupling The core length of the waveguide portion.
  • the ninth possible implementation manner of implementing the first aspect of the embodiment of the present application can better amplify the signal light, attenuate the pump light, and further amplify the signal light.
  • the gain material includes A combination of materials, tantalum materials or tantalum materials with tantalum materials.
  • Rare earth materials such as tantalum materials or tantalum materials can correspond to several common wavelength bands of fiber optic communication windows, such as 1550mm.
  • a second aspect of the embodiments of the present application discloses an optical coupling connector including an upper connector and a lower connector, wherein:
  • the upper layer connector includes N upper layer amplifying waveguides, wherein N is a positive integer greater than or equal to 2; the lower layer connector includes N lower layer waveguides, and the N lower layer waveguides and the N upper layer amplifying waveguides a corresponding coupling, each of the lower layer waveguides includes a first coupled waveguide portion, a second coupled waveguide portion, and a pitch matching waveguide portion; the optical fiber array includes N optical fibers, and the N optical fibers provide N for the N lower waveguides a signal light, the optoelectronic chip includes N optical waveguides; a first end of the N lower waveguides is connected in one-to-one correspondence with the N optical fibers, and a second end of the N lower waveguides and the N Optical waveguides are connected one by one;
  • Each of the upper layer amplifying waveguides includes a first core layer and a first cladding layer covering the first core layer, the material of the first core layer comprising a gain material capable of coupling the lower layer waveguide to the corresponding
  • the signal light of the upper layer amplification waveguide is amplified, and the refractive index of the first core layer is greater than the refractive index of the first cladding layer;
  • Each of the lower layer waveguides includes a second core layer and a second cladding layer covering the second core layer, the second core layer is for transmitting the signal light, and the refractive index of the second core layer Greater than the refractive index of the second cladding layer.
  • the optical coupling connector can amplify and output the multi-path signal light in the optical fiber array to the optoelectronic chip, thereby solving the problem that the signal light loss in the optical coupling connector is excessive.
  • the core layer of the first coupling waveguide portion and the core of the second coupling waveguide portion of each lower layer waveguide The layer is broken.
  • the first possible implementation manner of implementing the second aspect of the embodiment of the present application can save the core material.
  • the lower layer waveguide j receives a signal light emitted by the optical fiber array.
  • the first coupled waveguide portion of the lower layer waveguide j optically couples the one signal to the corresponding upper amplifying waveguide i, and the upper amplifying waveguide i amplifies the one signal light to be coupled to the second of the lower waveguide j a coupling waveguide portion, the second coupling waveguide portion of the lower layer waveguide j transmits the amplified one-way signal light to the pitch matching waveguide portion of the lower layer waveguide j, and the pitch matching waveguide portion of the lower layer waveguide j is amplified
  • the one-way signal light is transmitted to the optoelectronic chip;
  • the upper layer amplification waveguide i is any one of the N upper layer amplification waveguides, and the lower layer waveguide j is any one of the N lower layer waveguides
  • the lower layer waveguide j receives a signal light emitted by the optical fiber array.
  • the pitch matching waveguide portion of the lower layer waveguide j transmits the one signal light to the first coupling waveguide portion of the lower layer waveguide j, and the first coupling waveguide portion of the lower layer waveguide j couples the one signal light to the corresponding
  • the upper layer amplifies the waveguide i, and the upper layer amplifying waveguide i amplifies the one signal light to be coupled to the second coupling waveguide portion of the lower layer waveguide j, and the second coupling waveguide portion of the lower layer waveguide j is to be enlarged Transmitting a signal light to the optoelectronic chip;
  • the upper layer amplification waveguide i is any one of the N upper layer amplification waveguides
  • the lower layer waveguide j is any one of the N lower layer waveguides
  • any two adjacent lower-layer waveguides of the N lower-layer waveguides is equal to the spacing between any two adjacent fibers in the fiber array; the spacing between any two adjacent lower waveguides of the N lower waveguides matches between the waveguide portions
  • the minimum spacing is equal to the spacing between any two adjacent optical waveguides in the optoelectronic chip.
  • the fourth possible implementation manner of implementing the second aspect of the embodiments of the present application can reduce coupling loss when signal light is transmitted from the optical fiber array to the lower layer connector, and reduce coupling when signal light is transmitted from the lower layer connector to the optoelectronic chip. loss.
  • any two adjacent lower-layer waveguides of the N lower-layer waveguides is equal to the spacing between any two adjacent fibers in the fiber array; the second coupling waveguide portion of any two adjacent lower waveguides of the N lower layer waveguides The spacing between the two is equal to the spacing between any two adjacent optical waveguides in the optoelectronic chip.
  • the fifth possible implementation manner of implementing the second aspect of the embodiments of the present application can reduce coupling loss when signal light is transmitted from the optical fiber array to the lower layer connector, and reduce coupling when the signal light is transmitted from the lower layer connector to the optoelectronic chip. loss.
  • the N upper layer amplification waveguides and the N lower layer waveguides are both a rectangular waveguide, the first The core layer height and core layer width of one core layer satisfy single mode transmission conditions, and the core layer height and core layer width of the second core layer satisfy single mode transmission conditions.
  • the sixth possible implementation manner of implementing the second aspect of the embodiment of the present application can reduce the loss of transmission of signal light in the lower layer waveguide.
  • the core layer height of the first coupling waveguide portion remains unchanged.
  • the core layer width of the first coupling waveguide portion gradually decreases along the propagation direction of the signal light; the core layer height of the second coupling waveguide portion remains unchanged, and the core layer width of the second coupling waveguide portion is along the signal light The direction of propagation has gradually increased.
  • the seventh possible implementation manner of implementing the second aspect of the embodiment of the present application can improve the coupling efficiency of the signal light from the first coupling waveguide portion of the lower layer waveguide to the upper layer amplification waveguide, and improve the amplified signal light from the upper layer. Amplifying the coupling efficiency of the waveguide coupled to the second coupled waveguide portion of the underlying waveguide.
  • the gain material is a semiconductor material.
  • the semiconductor material is a direct bandgap semiconductor material such as gallium arsenide (GaAs), indium phosphide (lnP), or the like.
  • the semiconductor The material amplifies the signal light by the carriers.
  • the third aspect of the embodiment of the present application discloses an optical coupling system, including an optical fiber array, an optoelectronic chip, at least one laser, and any optical coupling connector disclosed in the first aspect of the present application, wherein:
  • the optical fiber array includes N optical fibers
  • the optoelectronic chip includes N optical waveguides
  • the optical coupling connector includes N upper waveguides and N lower waveguides, and the N lower waveguides and the N upper waveguides a corresponding coupling, the N optical fibers of the optical fiber array are connected in one-to-one correspondence with the N lower-layer waveguides of the optical coupling connector, and the N lower-layer waveguides and the photoelectrons of the optical coupling connector
  • the N optical waveguides of the chip are connected one by one, and the at least one laser is connected to the N upper waveguides;
  • the at least one laser outputs N pumping lights to the N upper waveguides, the N fibers output N signal light to the N lower waveguides, and the optical coupling connector pumps the N paths
  • the light is respectively coupled to the N lower layer waveguides, and the N lower layer waveguides respectively couple the N pumping lights to the N signal light and respectively output to the N pieces of the optoelectronic chip Optical waveguide.
  • the optical coupling connector can not only couple the optical fiber array and the optoelectronic chip, but also amplify the signal light in the optical coupling connector by pumping light, thereby solving the optical coupling connection.
  • the signal light loss in the device is too large.
  • the fourth aspect of the embodiments of the present application discloses a waveguide coupling method, which is applicable to any of the optical coupling connectors disclosed in the first aspect of the embodiments of the present application, including:
  • the optical coupling connector receives N signal light output by the optical fiber array; receives N pump light input by the pump light source; and the N is a positive integer greater than or equal to 2;
  • the optical coupling connector couples the N signal light and the N pump light one-to-one to form an N-way coupling light
  • the optical coupling connector amplifies the signal light in each of the coupled lights, attenuating the pump light in each of the coupled lights, and in the amplified each of the coupled lights
  • the signal light is output to the optoelectronic chip.
  • the optical coupling connector can couple the pump light and the signal light, and amplify and output the signal light to the optoelectronic chip, thereby realizing amplification of the signal light in the optical coupling connector.
  • the optical coupling connector includes N upper-layer waveguides, and the optical coupling connector passes the N The upper waveguide receives N pump lights, respectively.
  • the optical coupling connector further includes N lower layer waveguides, Each of the N lower layer waveguides includes a coupling waveguide portion and a signal light amplifying waveguide portion, and the optical coupling connector couples the N signal light and the N pumping lights one-to-one to form an N path Coupled light, including:
  • the coupling waveguide portion of the N lower-layer waveguides in the optical coupling connector couples the N-channel signal light and the N-channel pumping light one-to-one to form N-way coupling light.
  • the optical coupling connector amplifies the each of the coupled light
  • the signal light attenuates the pump light in each of the coupled lights, and outputs the amplified signal light in each of the coupled lights to the optoelectronic chip, including:
  • a signal light amplifying waveguide portion in each of the lower layer waveguides of the optical coupling connector amplifies signal light in each of the coupled lights, attenuating pump light in each of the coupled lights, and amplifying the The signal light in each of the coupled lights is output to the optoelectronic chip.
  • the fifth aspect of the embodiments of the present application discloses an optical coupling system, including an optical fiber array, an optoelectronic chip, and any optical coupling connector disclosed in the second aspect of the embodiment of the present application, wherein:
  • the optical fiber array includes N optical fibers
  • the optoelectronic chip includes N optical waveguides
  • the optical coupling connector includes N upper-layer amplified waveguides and N lower-layer waveguides
  • the N lower-layer waveguides and the N upper layers are enlarged One-to-one coupling of the waveguides
  • the N fibers of the optical fiber array are connected in one-to-one correspondence with the N lower-layer waveguides of the optical coupling connector
  • the N lower-layer waveguides of the optical coupling connector The N optical waveguides of the optoelectronic chip are connected one by one;
  • the N fibers of the fiber array output N signal light to N lower layer waveguides of the optical coupling connector, and the N lower layer waveguides respectively couple the N signal lights to the optical coupling connector N upper-layer amplification waveguides, wherein the N upper-layer amplification waveguides respectively amplify the N-channel signal light to be coupled to the N lower-layer waveguides, and the N lower-layer waveguides respectively amplify the amplified N-channel signal lights Output to the N optical waveguides of the optoelectronic chip.
  • the optical coupling connector can not only couple the optical fiber array and the optoelectronic chip, but also amplify the signal light in the optical coupling connector through the upper amplification waveguide, thereby solving the optical coupling connection.
  • the signal light loss in the device is too large.
  • the sixth aspect of the embodiments of the present application discloses a waveguide coupling method, which is applicable to any of the optical coupling connectors disclosed in the second aspect of the embodiments of the present application, including:
  • the lower layer connector receives N signal light output by the fiber array
  • the lower layer connector couples the N signal lights one-to-one to the upper layer connector;
  • the upper layer connector respectively amplifies the N road signal lights to be coupled to the lower layer connector;
  • the lower layer connector outputs the amplified N-channel signal light to the N pieces of light of the optoelectronic chip waveguide.
  • the upper layer connector can amplify the signal light coupled by the lower layer connector and then couple into the lower layer connector again, thereby realizing amplification of the signal light in the upper layer connector.
  • the lower layer connector includes N lower layer waveguides, and each of the N lower layer waveguides The first coupling waveguide portion and the second coupling waveguide portion are included, and the lower layer connector couples the N signal lights in one-to-one correspondence to the upper layer connector, including:
  • the first coupling waveguide portion of the N lower layer waveguides in the lower layer connector couples the N signal lights one-to-one to the upper layer connector.
  • the upper layer connector separately amplifies the N signal lights Coupled to the lower layer connector, including:
  • the upper connector Transmitting a carrier into the upper connector, the upper connector amplifying the N signal light by the carrier, and coupling the amplified N signal light to the lower layer respectively A second coupled waveguide portion of the N lower waveguides of the connector.
  • the optical coupling connector in the implementation of the present application includes an upper connector and an upper connector.
  • the upper connector includes N upper waveguides
  • the lower connector includes N lower waveguides
  • the N lower waveguides are coupled with the N upper waveguides in one-to-one correspondence.
  • Each of the lower waveguides includes a coupling waveguide portion, a pitch matching waveguide portion, and a signal light amplifying waveguide portion.
  • the upper waveguide of the optical coupling connector in the implementation of the present application can couple the pump light to the corresponding lower waveguide, and the coupled waveguide portion of the lower waveguide combines the signal light emitted by the optical array with the pump light coupled into the upper waveguide to form a coupling light.
  • the pitch matching waveguide portion is used to adjust the spacing between adjacent lower layer waveguides, the spacing matching waveguide portion transmits the received coupling light to the signal light amplifying waveguide portion, and the signal optical amplifying waveguide portion amplifies the coupled light
  • the signal light attenuates the pump light in the coupled light, and outputs the amplified signal light to the optoelectronic chip.
  • the optical coupling connector in the implementation of the present application can separately amplify and output multiple signal lights in the optical fiber array to the optoelectronic chip.
  • the optical coupling connector in the implementation of the present application has a simple structure and a size. Small, simple manufacturing process, can be widely used in the coupling connection between optical fiber array and optoelectronic chip.
  • 1a is a schematic diagram of a system architecture disclosed in an embodiment of the present application.
  • 1b is a schematic diagram of a coupling connection between an upper layer waveguide and a lower layer waveguide disclosed in an embodiment of the present application;
  • 1c is a schematic diagram of another system architecture disclosed in an embodiment of the present application.
  • FIG. 1 is a schematic diagram of a coupling connection between an upper layer amplified waveguide and a lower layer waveguide disclosed in an embodiment of the present application;
  • FIG. 2a is a schematic structural diagram of an optical coupling connector disclosed in an embodiment of the present application.
  • FIG. 2b is a schematic structural diagram of another optical coupling connector disclosed in an embodiment of the present application.
  • 2c is a schematic structural diagram of another optical coupling connector disclosed in the embodiment of the present application.
  • FIG. 3 is a schematic diagram of a coupling structure of an upper layer waveguide and a lower layer waveguide disclosed in the embodiment of the present application;
  • FIG. 4 is a schematic diagram of a signal light amplification principle disclosed in an embodiment of the present application.
  • FIG. 5 is a schematic structural diagram of an optical coupling system disclosed in an embodiment of the present application.
  • FIG. 6 is a schematic structural diagram of another optical coupling connector disclosed in an embodiment of the present application.
  • 6a is a schematic structural diagram of still another optical coupling connector disclosed in the embodiment of the present application.
  • 6b is a schematic structural diagram of still another optical coupling connector disclosed in the embodiment of the present application.
  • 6c is a schematic structural diagram of still another optical coupling connector disclosed in the embodiment of the present application.
  • 6d is a schematic structural diagram of still another optical coupling connector disclosed in the embodiment of the present application.
  • FIG. 7 is a schematic diagram of another signal light amplification principle disclosed in the embodiment of the present application.
  • FIG. 8 is a schematic structural diagram of another optical coupling system disclosed in an embodiment of the present application.
  • FIG. 9 is a schematic flow chart of a waveguide coupling method disclosed in an embodiment of the present application.
  • FIG. 10 is a schematic flow chart of another waveguide coupling method disclosed in an embodiment of the present application.
  • the embodiment of the present application discloses an optical coupling connector, an optical coupling system, and a waveguide coupling method, which can solve the problem that the manufacturing process of the optical coupling connector is complicated. The details are described below separately.
  • FIG. 1a is a schematic diagram of a system architecture disclosed in an embodiment of the present application.
  • the system architecture includes an optical fiber array 10, an optical coupling connector 20, an optoelectronic chip 30, and a pumping light source 40.
  • the optical fiber array 10 includes N optical fibers (101, 102, ...), optically coupled.
  • the upper layer connector 201 and the lower layer connector 202 may be included in the apparatus 20, the upper layer connector 201 includes N upper layer waveguides (211, 212, ...), the lower layer connector includes N lower layer waveguides (221, 222, ...), and the optoelectronic chip includes N Strip optical waveguides (301, 302).
  • the waveguide is a device for transmitting electromagnetic waves. Each waveguide can independently transmit an electromagnetic wave signal.
  • the shape of the waveguide can be rectangular or circular.
  • the material of the waveguide can be a material with less transmission loss to the electromagnetic wave, for example, an optical signal. Silica with low transmission loss.
  • One fiber in the fiber array 10 (for example, the fiber 101) is connected to one end of a lower layer waveguide (for example, the lower layer waveguide 221), and the other end of a lower layer waveguide (for example, the lower layer waveguide 221) is connected to one optical waveguide in the optoelectronic chip 30 ( For example, the optical waveguide 301), an upper layer waveguide (211) is located on the upper layer of a lower layer waveguide (for example, the lower layer waveguide 221), as shown by the dotted line frame portion in FIG.
  • the lower layer waveguides of each fiber connection are different from each other (that is, one fiber is correspondingly connected to one lower layer waveguide, for example, the fiber 101 is connected to the lower layer waveguide 221), and the optical waveguides connected to each lower layer waveguide are different from each other ( That is, one lower layer waveguide is connected to one optical waveguide, for example, the lower layer waveguide 221 is connected to the optical waveguide 301); one upper layer waveguide is coupled to one lower layer waveguide (for example, the upper layer waveguide 211 and the lower layer waveguide 221 are coupled), wherein the upper layer waveguide
  • the coupling mode of the 211 and the lower layer waveguide 221 may be a vertical coupling mode, as shown in FIG.
  • FIG. 1b is an example disclosed in the embodiment of the present application.
  • the waveguide 211 of the upper coupling the upper The region is coupled to the lower layer coupling region of the lower layer waveguide 221 to couple the pump light from the upper layer coupling region of the upper layer waveguide 211 to the lower layer coupling region of the lower layer waveguide 221, when the pumping light enters the upper layer coupling region of the upper layer waveguide 211,
  • the upper waveguide 211 cannot restrict the pumping light in the upper coupling region, and the pump light continuously escapes from the upper coupling region and enters the lower waveguide 221
  • the lower layer waveguide 221 continuously collects the pump light escaping from the upper layer waveguide 221, thereby gradually coupling the pump light from the upper layer waveguide 211 into the lower layer waveguide 221.
  • the pumping source 40 provides N pumping lights for the N upper waveguides (211, 212, ...), wherein the pumping source 40 can be a laser (eg, a semiconductor laser), a light emitting diode, etc., and each upper waveguide receives one pump.
  • the pumping source 40 can be a laser (eg, a semiconductor laser), a light emitting diode, etc., and each upper waveguide receives one pump.
  • N fibers (101, 102%) in the fiber array 10 provide N signal light for N lower layers of waveguides (221, 222, ...), wherein each lower layer waveguide receives one signal light; N upper waveguides N-channel pumping light is respectively coupled to the N lower-layer waveguides, wherein each of the upper-layer waveguides couples the received pumping light into a corresponding one of the lower-layer waveguides; for any of the N lower-layer waveguides, any one of the lower-layer waveguides The lower waveguide couples the received signal light with the pump light, attenuates the pump light, amplifies the signal light, and outputs the amplified signal light to the optoelectronic chip 30.
  • the optical coupling connector 20 can amplify and output the multiplexed signal light in the optical fiber array 10 to the optoelectronic chip 30.
  • the optical coupling connector 20 can not only perform the optical fiber array 10 and the optoelectronic chip 30. Coupling, and the signal light in the optical coupling connector 20 can be amplified, solving the problem that the signal light loss in the optical coupling connector 20 is excessive.
  • FIG. 1c is a schematic diagram of another system architecture disclosed in the embodiment of the present application.
  • the system architecture includes an optical fiber array 10, an optical coupling connector 20, and an optoelectronic chip 30, wherein the optical fiber array 10 includes N optical fibers (101, 102, ...), which may be included in the optical coupling connector 20.
  • the waveguide is a device for transmitting electromagnetic waves, and each waveguide can independently transmit one electromagnetic wave signal.
  • the shape of the waveguide can be rectangular or circular, and the core material of the N lower waveguides can be a material with less transmission loss to electromagnetic waves.
  • the core material of the N upper-layer amplifying waveguides may be a semiconductor material, optionally a direct bandgap semiconductor material such as gallium arsenide (GaAs). Indium phosphide (lnP), etc.
  • One fiber in the fiber array 10 (for example, the fiber 101) is connected to one end of a lower layer waveguide (for example, the lower layer waveguide 221), and the other end of a lower layer waveguide (for example, the lower layer waveguide 221) is connected to one optical waveguide in the optoelectronic chip 30 (
  • the optical waveguide 301) an upper layer amplification waveguide (211) is located on an upper layer of a lower layer waveguide (for example, the lower layer waveguide 221), as shown by a broken line frame portion in FIG. 1c (the enlarged upper layer amplification waveguide 211 and the corresponding lower layer waveguide 221).
  • each fiber connection is different from each other (that is, one fiber is connected to one lower layer waveguide, for example, the fiber 101 is connected to the lower layer waveguide 221), and the optical waveguides connected to each lower layer waveguide are not mutually The same (ie, one lower layer waveguide is connected to one optical waveguide, for example, the lower layer waveguide 221 is connected to the optical waveguide 301); one upper layer amplification waveguide is coupled to one lower layer waveguide (for example, the upper layer amplification waveguide 211 and the lower layer waveguide 221 are coupled),
  • the coupling mode of the upper layer amplification waveguide 211 and the lower layer waveguide 221 may be a vertical coupling mode, as shown in FIG. 1d, and FIG.
  • FIG. 1d A schematic diagram of a coupling connection between an upper layer amplified waveguide and a lower layer waveguide disclosed in the embodiment.
  • a rectangular waveguide is taken as an example, and an upper layer coupling region of the upper layer amplification waveguide 211 (including a first upper layer coupling region and a second upper layer coupling region) and The lower layer coupling region of the lower layer waveguide 221 (including the first lower layer coupling region and the second lower layer coupling region) is coupled to cause signal light from the lower layer wave
  • the first lower layer coupling region of the conductor 221 is coupled to the first upper layer coupling region of the upper layer amplification waveguide 211, and the amplification region of the upper layer amplification waveguide 211 amplifies the signal light and is coupled from the second upper layer coupling region to the second lower layer of the lower layer waveguide 221 Coupling area.
  • the width of the first lower layer coupling region is gradually narrowed in the transmission direction of the signal light, first The width of the upper layer coupling region is gradually widened, the lower layer waveguide 221 is unable to confine the signal light in the first lower layer coupling region, and the signal light continuously escapes from the first lower layer coupling region, and enters the first upper layer coupling of the upper layer amplifying waveguide 211.
  • the upper amplifying waveguide 211 continuously collects the signal light escaping from the lower layer waveguide 221, thereby gradually coupling the signal light from the lower layer waveguide 221 into the upper layer amplifying waveguide 211, and after the signal light enters the upper layer amplifying waveguide 211, the upper layer amplifying the waveguide 211
  • the amplification area amplifies the signal light, and after the signal light is amplified, passes through the second upper layer coupling region of the upper layer amplification waveguide 211 to enter the second lower layer coupling region of the lower layer waveguide 221, similarly, in the transmission direction of the signal light, due to the second upper layer
  • the width of the coupling region is gradually narrowed, the width of the second lower layer coupling region is gradually widened, and the amplified signal light continuously escapes from the second upper layer coupling region.
  • the optical coupling connector 20 can amplify and output the multiplexed signal light in the optical fiber array 10 to the optoelectronic chip 30.
  • the optical coupling connector 20 can not only perform the optical fiber array 10 and the optoelectronic chip 30. Coupling, and the signal light in the optical coupling connector 20 can be amplified, solving the problem that the signal light loss in the optical coupling connector 20 is excessive.
  • the optical coupling connector in the embodiment of the present application is an optical coupling connector capable of amplifying signal light.
  • FIG. 2a is a schematic structural diagram of an optical coupling connector disclosed in the embodiment of the present application.
  • the optical coupling connector 20 is used to connect the optical fiber array 10 and the optoelectronic chip 30.
  • the optical coupling connector 20 includes an upper layer connector 201 and a lower layer connector 202, wherein:
  • the upper connector 201 includes N upper waveguides, N is a positive integer greater than or equal to 2; the lower connector 202 includes N lower waveguides, and the N lower waveguides are coupled with the N upper waveguides in a one-to-one correspondence, and each lower waveguide includes a coupling waveguide portion, a pitch matching waveguide portion, and a signal light amplifying waveguide portion; the pumping light source 40 is connected to N upper waveguides (211, 212, ... in FIG. 2a), and the pumping light source 40 provides N pumps for N upper waveguides Puguang, the optical fiber array includes N optical fibers (such as 101, 102... in Figure 2a), and N optical fibers provide N signal light for N lower-layer waveguides (221, 222, ...
  • the optoelectronic chip includes N The strip optical waveguides (such as 301, 302... in FIG. 2a), the first ends of the N lower layer waveguides are connected in one-to-one correspondence with the N optical fibers, and the second ends of the N lower layer waveguides are connected in one-to-one correspondence with the N optical waveguides.
  • N The strip optical waveguides (such as 301, 302... in FIG. 2a)
  • the first ends of the N lower layer waveguides are connected in one-to-one correspondence with the N optical fibers
  • the second ends of the N lower layer waveguides are connected in one-to-one correspondence with the N optical waveguides.
  • the coupling waveguide portion, the pitch matching waveguide portion and the signal light amplifying waveguide portion are sequentially connected, and the N optical fibers are connected to the one end of the N lower layer waveguides near the coupling waveguide portion one by one, N optical waveguides and N
  • the lower layer waveguides are connected to one end of the signal light amplifying waveguide portion one by one; or, as shown in FIG. 2b, the coupling waveguide portion, the signal light amplifying waveguide portion and the pitch matching waveguide portion are sequentially connected, and the N fibers are adjacent to the N lower layer waveguides.
  • One end of the coupled waveguide portion is connected one by one, and the N optical waveguides are connected to the one end of the N lower waveguides close to the pitch matching waveguide portion; or, as shown in FIG. 2c, the pitch matching waveguide portion, the coupled waveguide portion, and the signal light
  • the amplifying waveguide portions are sequentially connected, and the N optical fibers are connected to the one ends of the N lower layer waveguides adjacent to the pitch matching waveguide portions, and the N optical waveguides are connected to the one ends of the N lower layer waveguides adjacent to the signal light amplifying waveguide portions one by one.
  • Each of the lower waveguides includes a first core layer and a first cladding layer.
  • the material of the first cladding layer includes a gain material, and the gain material can transfer the energy of the pump light to the signal light, and the refractive index of the first core layer is greater than The refractive index of the first cladding layer.
  • the excitation material can transmit the energy of the pump light to the signal light under the excitation of the pump light, thereby realizing the function of amplifying the signal light, and the refractive index of the first core layer is greater than the refractive index of the first cladding layer, Ensure that the signal light is in the underlying waveguide When transmitting in the first core layer, the total reflection condition can be satisfied, and the signal beam is enclosed in the core layer to reduce the transmission loss of the signal light.
  • the material of the first core layer may be silicon, silicon dioxide, silicon nitride, polymer, etc.
  • the gain material may be a material doped with rare earth ions such as cerium ions or cerium ions.
  • the gain effect of the gain material used in the coupling waveguide portion of each lower layer waveguide and the cladding layer matching the waveguide portion is small, and the gain effect of the gain material used in the signal light amplifying waveguide portion of each lower layer waveguide is larger.
  • the upper layer connector 201 inputs the N pumping lights generated by the pumping light source 40 into the N upper layer waveguides respectively, and the N upper layer waveguides respectively couple the N pumping lights into the corresponding N lower layer waveguides.
  • the lower layer connector 202 couples the N signal light input from the N optical fibers to the N pump light in a one-to-one manner to form N-channel coupling light, and respectively amplifies the signal light in the N-channel coupling light and respectively inputs the photoelectrons.
  • the optical coupling connector 20 has a simple structure, a small size, a simple manufacturing process, and a low manufacturing cost.
  • the upper layer waveguide i (21i in FIG. 2a) receives one pump light
  • the lower layer waveguide j (such as 22j in FIG.
  • the upper waveguide i couples one pump light to the coupled waveguide portion of the corresponding lower layer waveguide j, and the coupled waveguide portion of the lower layer waveguide j transmits the coupling light composed of one pump light and one signal light to the pitch matching waveguide portion of the lower layer waveguide j
  • the pitch matching waveguide portion of the lower layer waveguide j transmits the coupled light to the signal light amplifying waveguide portion of the lower layer waveguide j, and the signal light amplifying waveguide portion of the lower layer waveguide j amplifies one of the coupled light and attenuates one of the coupled lights Light, the amplified signal light is output to the optoelectronic chip 30;
  • the upper layer waveguide i is any one of the N upper layer waveguides, and the lower layer waveguide j is any one of the N lower layer waveguides.
  • the upper waveguide may be a rectangular waveguide (eg, a square waveguide), a circular waveguide, a ridge waveguide, or the like, and the N upper waveguides may be located in the same plane (eg, a planar optical waveguide), and the N lower waveguides and the N
  • the upper layer waveguides are coupled in a one-to-one correspondence.
  • FIG. 3 is a schematic diagram of a coupling structure of an upper layer waveguide and a lower layer waveguide disclosed in the embodiment of the present application.
  • FIG. 3 is a schematic diagram of a coupling structure of an upper layer waveguide and a lower layer waveguide disclosed in the embodiment of the present application.
  • the cross section of the upper layer waveguide is The lower layer waveguide has a rectangular cross section, the upper layer waveguide 1 is coupled with the lower layer waveguide 1, the upper layer waveguide 2 is coupled with the lower layer waveguide 2, the upper layer waveguide i is coupled with the lower layer waveguide j, and the like, wherein adjacent upper layer waveguides are There is a spacing between them, and there is a gap between adjacent lower waveguides.
  • the upper layer waveguide i and the lower layer waveguide j are taken as an example to explain the principle of signal light amplification of the optical coupling connector 20, the upper layer waveguide i is any one of the N upper layer waveguides, and the lower layer waveguide j is any one of the N lower layer waveguides.
  • the upper layer waveguide i (21i in FIG. 2a) in the upper layer connector 201 receives one pump light, and the lower layer waveguide j (22j in FIG.
  • the waveguide i couples one pump light to the coupled waveguide portion of the corresponding lower layer waveguide j, and the coupled waveguide portion of the lower layer waveguide j transmits the coupled light composed of one pump light and one signal light to the pitch matching waveguide portion of the lower layer waveguide j.
  • the pitch matching waveguide portion of the lower layer waveguide j transmits the coupled light to the signal light amplifying waveguide portion of the lower layer waveguide j, and the signal light amplifying waveguide portion of the lower layer waveguide j amplifies one of the coupled light and attenuates one of the coupled light
  • the amplified signal light is output to the optoelectronic chip 30.
  • the optical coupling connector 20 shown in FIG. 2a has a simple structure, a small size, a simple manufacturing process, and a low manufacturing cost.
  • the spacing between the coupled waveguide portions of any two adjacent lower waveguides of the N lower layer waveguides is equal to the spacing between any two adjacent fibers in the fiber array;
  • the spacing between adjacent signal light amplifying waveguide portions of any two adjacent lower waveguides in the lower layer waveguide and any two adjacent lights in the optoelectronic chip The spacing between the waveguides is equal.
  • the spacing between the coupled waveguide portions of any two adjacent lower-layer waveguides of the N lower-layer waveguides is equal to the spacing between any two adjacent optical fibers in the optical fiber array 10, thereby ensuring the optical fiber array 10 and the optical coupling connector
  • One end of the lower connector 202 of 20 (near one end of the coupled waveguide portion) performs better coupling to reduce coupling loss when signal light is transmitted from the optical fiber array 10 to the lower connector 202; any two of the N lower waveguides
  • the spacing between adjacent signal light amplifying waveguide portions of the adjacent lower layer waveguide is equal to the spacing between any two adjacent optical waveguides in the optoelectronic chip 30, and the other end of the lower layer connector 202 of the optical coupling connector 20 can be secured (close to
  • the signal light amplifying one end of the waveguide portion is preferably coupled to the optoelectronic chip 30 to reduce coupling loss when signal light is transmitted from the lower layer connector 202 to the optoelectronic chip 30.
  • the spacing between the coupled waveguide portions of any two adjacent lower waveguides of the N lower waveguides is also determined, and the matching matching waveguide can be adjusted by adjusting the spacing. Partial curvature to adjust the spacing between adjacent signal light amplifying waveguide portions of any two adjacent lower waveguides of the N lower layer waveguides so that adjacent two adjacent lower waveguides of the N lower layer waveguides are adjacent
  • the spacing between the signal light amplifying waveguide portions is equal to the spacing between any two adjacent optical waveguides in the optoelectronic chip 30.
  • the core layer refractive index of the upper layer waveguide is equal to the core layer refractive index of the lower layer waveguide, and is equal to the core layer refractive index of the optical fiber array, wherein the core layer refractive index of the upper layer waveguide and the core layer refractive index of the lower layer waveguide Equally, the coupling efficiency of pump light coupling from the upper waveguide to the lower waveguide can be improved.
  • the refractive index of the core layer of the upper waveguide is equal to the refractive index of the core layer of the optical fiber array, which can improve the coupling efficiency of signal light coupling from the fiber to the lower waveguide.
  • the N upper waveguides and the N lower waveguides are rectangular waveguides.
  • the core layer height and core layer width of the first core layer meet single mode transmission conditions.
  • the core layer height and the core layer width of the first core layer satisfy the single mode transmission condition, that is, the signal light is transmitted in only one mode in the lower layer waveguide, and the transmission loss of the signal light in the lower layer waveguide can be reduced.
  • the material of the first core layer is silicon
  • the refractive index is 3.5
  • the first cladding material is silicon dioxide
  • the refractive index is 1.445
  • the height of the rectangular waveguide is 220 nm
  • the single-mode conditional formula can calculate that the width of the core layer and the width of the core layer of the first core layer satisfy the single-mode transmission condition when the width of the rectangular waveguide ranges from 200 nm to 700 nm.
  • the signal light can be made to satisfy the single mode transmission condition by setting the incident angle of the signal light to the core radius.
  • the angle between the incident direction of one pump light and the cross section of the upper waveguide i is 90°; between the incident direction of one signal light and the cross section of the lower waveguide j The included angle is 90°; the angle between the outgoing direction of the amplified signal light and the cross section of the optical waveguide in the optoelectronic chip is 90°.
  • the angle between the incident direction of the pump light and the cross section of the upper waveguide i is 90°
  • a pumping light can be preferably coupled to the upper waveguide i to improve the coupling of the pump light from the pump source.
  • Coupling efficiency to the upper waveguide; the angle between the incident direction of one signal light and the cross section of the lower waveguide j is 90°, which can couple one signal light to the lower waveguide j to improve the signal light from the upper waveguide
  • the coupling efficiency coupled to the lower waveguide; the angle between the outgoing direction of the amplified signal light and the cross section of the optical waveguide in the optoelectronic chip 30 is 90°, and the amplified signal light can be better coupled to In the optoelectronic chip 30, the coupling efficiency of signal light coupling from the lower layer waveguide to the optoelectronic chip 30 is improved.
  • the upper connector further includes at least one optical beam splitter, each optical beam splitter for connecting the pumping source and the M upper waveguides, each of the optical beamsplitters being pumped
  • the original pump light emitted by the light source is divided into M parts and input to M upper layer waveguides, and M is a positive integer smaller than or equal to N.
  • each optical beam splitter can divide the original pump light emitted by the pumping source into M parts and input to the M upper layer waveguides
  • the pumping light source can be a laser (for example, a semiconductor laser)
  • the pump can be original
  • the pump light is divided into M parts and input to M upper-layer waveguides. For example, if the laser output power is 200mW and M is 4, the laser can divide the power of 200mW into 4 parts and input them into 4 upper-layer waveguides.
  • each upper waveguide includes a second core layer and a second cladding layer covering the second core layer, the second core layer is for transmitting pump light, and the second core layer
  • the refractive index is greater than the refractive index of the second cladding layer, the width of the second core layer gradually decreases along the propagation direction of the pump light, and the height of the second core layer remains unchanged.
  • the refractive index of the second core layer is greater than the refractive index of the second cladding layer, which can ensure that the pumping light can be transmitted to the core layer when the second light layer of the upper waveguide is transmitted, and the pumping beam is bound to the core layer.
  • the transmission loss of the pump light in the upper waveguide is reduced, the width of the second core layer is gradually decreased along the propagation direction of the pump light, and the height of the second core layer remains unchanged, and the pump light in the upper waveguide can be Fast coupling into the underlying waveguide improves the coupling efficiency of pump light coupling from the upper waveguide to the lower waveguide.
  • the material of the second core layer may be silicon, silicon dioxide, silicon nitride, a polymer or the like.
  • the height of the cladding layer between the upper waveguide (21i in FIG. 2a) and the corresponding lower waveguide (22j in FIG. 2a) is as small as possible, and the pump light can be reduced in the cladding layer. The loss, thereby increasing the coupling efficiency of pump light coupling from the upper waveguide to the lower waveguide.
  • the core width of the signal light amplifying waveguide portion is less than or equal to the core layer width of the coupled waveguide portion.
  • the core layer size of the optical fiber in the optical fiber array 10 is large, the core layer size of the optical waveguide in the optoelectronic chip 30 is small, and the lower layer connector 202 in the optical coupling connector 20 is matched with the optical fiber array 10 and the optoelectronic chip 30,
  • the core layer width of the coupled waveguide portion of the lower layer waveguide in the lower layer connector 202 matches the core layer width of the optical fiber in the optical fiber array 10, and the signal layer of the lower layer waveguide in the lower layer connector 202 amplifies the core layer width of the waveguide portion and the light in the optoelectronic chip 30.
  • the core layers of the waveguides are matched in width so that the fiber array 10 can be coupled to the optoelectronic chip 30 via the optical coupling connector 20.
  • the length of the core layer of the signal light amplifying waveguide portion is greater than the length of the core layer of the coupled waveguide portion.
  • the pump light is gradually attenuated, the signal light is gradually amplified, and the length of the core layer of the signal light amplifying waveguide portion is larger, the less the pumping light is, the larger the signal light is, when the signal light amplifies the waveguide portion
  • the pump light can be attenuated as much as possible to amplify the signal light.
  • the gain material comprises a tantalum material, a tantalum material or a combination of tantalum material and tantalum material.
  • the germanium material is a material doped with cerium ions
  • the germanium material is a material doped with cerium ions
  • the combination of germanium materials and germanium materials is a material which is simultaneously doped with cerium ions and cerium ions.
  • the rare earth ions such as cerium ions and cerium ions are activated ions for transmitting the energy of the pump light to the signal light.
  • FIG. 4 is a signal light disclosed in the embodiment of the present application. Schematic diagram of the amplification principle.
  • the erbium ions in the erbium material absorb the pump light of 980 nm and then transition from the ground state to the excited state. Since the erbium ions are unstable in the excited state, Soon from the excited state to the metastable state, when the erbium ion is excited by the signal light, the erbium ion transitions from the metastable state to the ground state in the form of stimulated radiation, and emits the signal light of the same 1550 nm wavelength as the signal light. Thereby achieving the function of amplifying the signal light.
  • FIG. 5 is an embodiment of the present application.
  • the system architecture includes an optical fiber array 10, an optical coupling connector 20 described in the system architecture shown in FIG.
  • the optical coupling connector 20 may include an upper connector 201 and a lower connector 202, and the upper connector 201 includes at least one optical beam splitter (2011, 2012%) and N a strip upper waveguide (211, 2127), the lower layer connector comprises N lower layer waveguides (221, 222%), and the optoelectronic chip comprises N optical waveguides (301, 302...);
  • a laser 401 (taking laser #1 as an example) is connected to an optical beam splitter 2011 (taking optical beam splitter #1 as an example), and an optical beam splitter 2011 is connected to M upper-layer waveguides, wherein M and N are positive.
  • M is less than or equal to N; one fiber in the fiber array (for example, fiber 101) is connected to one end of a lower layer waveguide (for example, lower layer waveguide 221), and the other end of a lower layer waveguide (for example, lower layer waveguide 221) is connected to photoelectrons.
  • An optical waveguide for example, optical waveguide 301) in the chip 30, wherein the lower waveguides connected to each of the optical fibers are different from each other (that is, one optical fiber is connected to an underlying waveguide, for example, the optical fiber 101 is connected to the lower waveguide 221), and each The optical waveguides connected to the lower layer waveguides are different from each other (that is, one lower layer waveguide is connected to one optical waveguide, for example, the lower layer waveguide 221 is connected to the optical waveguide 301); one upper layer waveguide corresponds to one lower layer waveguide (for example, the upper layer waveguide 211 corresponds to the lower layer waveguide) 221);
  • the original pump light generated by a laser 401 (taking laser #1 as an example) is input to an optical beam splitter 2011 (taking optical beam splitter #1 as an example), and an optical beam splitter 2011 is used to pump the original pump light.
  • a corresponding lower layer waveguide (for example, the lower layer waveguide 221) couples signal light input from one optical fiber (such as the optical fiber 10) in the optical fiber array with the pump light, and converts the pump light into signal light, thereby attenuating the pump.
  • the light is amplified, and the amplified signal light is output to an optical waveguide (optical waveguide 301) in the optoelectronic chip 30.
  • the optical coupling system shown in FIG. 5 is implemented.
  • the optical coupling connector 20 can amplify and output the multi-path signal light in the optical fiber array 10 to the optoelectronic chip 30.
  • the optical coupling connector 20 can not only the optical fiber array 10 and the optoelectronic chip 30.
  • the coupling connection is performed, and the signal light in the optical coupling connector 20 can be amplified, thereby solving the problem that the signal light loss in the optical coupling connector 20 is excessively large.
  • FIG. 6 is a schematic structural diagram of another optical coupling connector disclosed in the embodiment of the present application.
  • the optical coupling connector 20 is used to connect the optical fiber array 10 and the optoelectronic chip 30.
  • the optical coupling connector 20 includes an upper layer connector 201 and a lower layer connector 202, wherein:
  • the upper connector 201 includes N upper-layer amplification waveguides (such as 211, 212, ... in FIG. 6), N is a positive integer greater than or equal to 2; and the lower connector 202 includes N lower-layer waveguides (such as 221, 222 in FIG. 6). 7), the N lower waveguides are coupled to the N upper amplification waveguides one-to-one, each of the lower waveguides including a first coupling waveguide portion, a second coupling waveguide portion and a pitch matching waveguide portion; the optical fiber array 10 includes N optical fibers ( As shown in FIG.
  • the N optical fibers provide N signal light for the N lower waveguides
  • the optoelectronic chip 30 includes N optical waveguides (such as 301, 302... in FIG. 6); N lower waveguides The first end is connected to the N optical fibers one by one, and the second ends of the N lower waveguides are connected to the N optical waveguides in one-to-one correspondence;
  • Each of the upper layer amplifying waveguides includes a first core layer and a first cladding layer, the material of the first core layer includes a gain material, and the gain material can couple the signal light of the lower layer waveguide to the corresponding upper layer amplification waveguide to be amplified, the first core
  • the refractive index of the layer is greater than the refractive index of the first cladding layer
  • Each of the lower waveguides includes a second core layer and a second cladding layer covering the second core layer, the second core layer is for transmitting signal light, and the second core layer has a refractive index greater than a refractive index of the second cladding layer.
  • the waveguide is a device for transmitting electromagnetic waves, and each waveguide can independently transmit one electromagnetic wave signal, and the shape of the waveguide can be rectangular, circular, etc., and the core material of the N lower waveguides can be transmitted for electromagnetic waves.
  • the core material of N upper-layer amplifying waveguides may be a semiconductor material, optionally a direct bandgap semiconductor material, such as Gallium arsenide (GaAs), indium phosphide (lnP), and the like.
  • the refractive index of the second core layer is greater than the refractive index of the second cladding layer, which ensures that when the signal light is transmitted in the second core layer of the lower layer waveguide, the total reflection condition can be satisfied, and the signal beam is enclosed in the core layer.
  • the material of the second core layer may be silicon, silicon dioxide, silicon nitride, a polymer or the like.
  • the height of the cladding layer between the upper layer amplification waveguide (such as 211 in FIG. 6) and the corresponding lower layer waveguide (such as 22j in FIG. 6) is as small as possible, and the signal light can be reduced in the cladding layer. The loss, thereby increasing the coupling efficiency of signal light coupling from the underlying waveguide to the upper amplifying waveguide.
  • the principle of amplification of the signal light will be explained below with reference to FIG. 6, when the signal light in the optical fiber array 10 enters the core layer of a lower layer waveguide (221 in FIG. 6) of the lower layer connector (such as the second core layer in FIG. 6).
  • the lower layer waveguide 221 couples the received signal light to the upper amplifying waveguide 211 through the first coupling waveguide portion, and the core layer of the upper amplifying waveguide 211 (as shown in FIG. 6).
  • the first core layer includes a gain material capable of amplifying the signal light, the upper layer amplification waveguide 211 amplifies the coupled signal light, and then the upper layer amplification waveguide 211 couples the amplified signal light to the second layer of the lower layer waveguide 221.
  • the waveguide portion is coupled, and the lower waveguide 221 outputs the amplified signal light to the optoelectronic chip 30 through the pitch matching waveguide portion.
  • the optical coupling connector 20 shown in FIG. 6 can amplify and output the multiplexed signal light in the optical fiber array 10 into the optoelectronic chip 30, thereby solving the problem that the signal light loss in the optical coupling connector 20 is excessively large, as shown in FIG.
  • the optical coupling connector 20 has a simple structure, a small size, a simple manufacturing process, a pump light source, and a low manufacturing cost.
  • the core layer of the first coupled waveguide portion of each lower layer waveguide is disconnected from the core layer of the second coupled waveguide portion. See Figures 6a and 6c.
  • the core layer of the first coupled waveguide portion of each of the lower waveguides in Figure 6a is disconnected from the core layer of the second coupled waveguide portion
  • Figure 6b each lower layer in Figure 6b
  • the core layer of the first coupled waveguide portion of the waveguide is connected to the core layer of the second coupled waveguide portion
  • the lower layer waveguide j (such as 22j in FIG. 6a or FIG. 6b) receives a signal light emitted by the optical fiber array
  • the lower layer waveguide j The first coupled waveguide portion couples one signal light to the corresponding upper layer amplified waveguide i (such as 21i in FIG. 6a or FIG.
  • the upper layer amplified waveguide i amplifies one signal light and is coupled to the second coupling of the lower layer waveguide j.
  • the second coupling waveguide portion of the lower layer waveguide j transmits the amplified one-way signal light to the pitch matching waveguide portion of the lower layer waveguide j
  • the pitch matching waveguide portion of the lower layer waveguide j transmits the amplified one-way signal light to the optoelectronic chip 30.
  • the upper layer amplification waveguide i is any one of N upper layer amplification waveguides
  • the lower layer waveguide j is any one of N lower layer waveguides.
  • the signal light has been completely or substantially coupled into the upper amplifying waveguide i in the first coupled waveguide portion.
  • the signal light is first coupled from the first coupling waveguide portion in the lower layer waveguide to the upper layer amplification waveguide, and the upper layer amplification waveguide amplifies the signal light and then recouples into the second coupling waveguide portion of the lower layer waveguide, and finally passes the pitch matching waveguide. The portion is then output to the optoelectronic chip 30.
  • the spacing between the first coupled waveguide portions of any two adjacent lower waveguides of the N lower layer waveguides is between any two adjacent fibers in the fiber array. Equal spacing; N lower waves The minimum spacing between the pitch matching waveguide portions of any two adjacent lower waveguides in the conductor is equal to the spacing between any two adjacent optical waveguides in the optoelectronic chip 30.
  • the spacing between the first coupling waveguide portions of any two adjacent lower-layer waveguides of the N lower-layer waveguides is equal to the spacing between any two adjacent optical fibers in the optical fiber array 10, so that the optical fiber array 10 and the optical coupling can be ensured.
  • One end of the lower connector 202 of the connector 20 performs better coupling, reducing coupling loss when signal light is transmitted from the optical fiber array 10 to the lower connector 202; in the N lower waveguides
  • the minimum spacing between the pitch matching waveguide portions of any two adjacent lower layer waveguides is equal to the spacing between any two adjacent optical waveguides in the optoelectronic chip 30, and the other end of the lower layer connector 202 of the optical coupling connector 20 can be secured.
  • the end of the spacing matching waveguide portion that is, the spacing between the adjacent lower waveguides matching the waveguide portion
  • the core layer of the first coupled waveguide portion of each of the lower waveguides in Figure 6c is disconnected from the core layer of the second coupled waveguide portion
  • Figure 6d each lower layer in Figure 6d
  • the core layer of the first coupled waveguide portion of the waveguide is connected to the core layer of the second coupled waveguide portion
  • the lower layer waveguide j receives one signal light emitted by the fiber array
  • the pitch matching waveguide portion of the lower layer waveguide j transmits one signal light to a first coupling waveguide portion of the lower layer waveguide j
  • the first coupling waveguide portion of the lower layer waveguide j optically couples one signal light to the corresponding upper layer amplification waveguide i
  • the upper layer amplification waveguide i amplifies one signal light and is coupled to the lower layer waveguide j a second coupled waveguide portion
  • the second coupled waveguide portion of the lower layer waveguide j transmits the amplified signal light to the optoelectronic chip
  • the upper layer ampl the core layer of the first coupled
  • the signal light has been completely or substantially coupled into the upper amplifying waveguide i in the first coupled waveguide portion.
  • the signal light first passes through the pitch matching waveguide portion of the lower layer waveguide, is output to the first coupling waveguide portion, and then is coupled into the upper layer amplification waveguide from the lower layer waveguide, and the upper layer amplification waveguide amplifies the signal light and then recouples into the lower layer waveguide. Finally, it is output to the optoelectronic chip 30.
  • the maximum spacing between the pitch matching waveguide portions of any two adjacent lower waveguides of the N lower layer waveguides is equal to the spacing between any two adjacent fibers in the fiber array; N lower waveguides The spacing between the second coupled waveguide portions of any two adjacent lower waveguides is equal to the spacing between any two adjacent optical waveguides in the optoelectronic chip 30.
  • the maximum spacing between the spacing matching waveguide portions of any two adjacent lower-layer waveguides of the N lower-layer waveguides is equal to the spacing between any two adjacent optical fibers in the optical fiber array, so that the optical fiber array 10 and the optical coupling connection can be ensured.
  • One end of the lower connector 202 of the device 20 (close to the end of the pitch matching waveguide portion, i.e., the maximum spacing between adjacent pitch matching waveguide portions) is better coupled to reduce signal light transmission from the fiber array 10 to the lower connector Coupling loss at 202 o'clock; the spacing between the second coupled waveguide portions of any two adjacent lower waveguides of the N lower layer waveguides is equal to the spacing between any two adjacent optical waveguides in the optoelectronic chip 30, which ensures light
  • the other end of the lower connector 202 of the coupling connector 20 is preferably coupled to the optoelectronic chip 30 to reduce coupling loss when signal light is transmitted from the lower connector 202 to the optoelectronic chip 30.
  • the N upper-layer amplified waveguides and the N lower-layer waveguides are rectangular waveguides, and the core layer height and the core layer width of the first core layer satisfy single-mode transmission conditions, and the second core layer The core height and core width satisfy the single mode transmission conditions.
  • the core layer height and the core layer width of the first core layer satisfy the single mode transmission condition
  • the core layer height and the core of the second core layer The layer width satisfies the single-mode transmission condition, and the signal light is transmitted in only one mode in the lower layer waveguide and the upper layer amplification waveguide, and the transmission loss of the signal light in the lower layer waveguide and the upper layer amplification waveguide can be reduced.
  • the core layer height of the first coupling waveguide portion remains unchanged, and the core layer width of the first coupling waveguide portion gradually decreases along the propagation direction of the signal light; the second coupling waveguide portion The height of the core layer remains unchanged, and the width of the core layer of the second coupled waveguide portion gradually increases along the propagation direction of the signal light.
  • the core layer height of the first coupling waveguide portion (the first lower layer coupling region in FIG. 1d) remains unchanged, and the core layer width of the first coupling waveguide portion gradually decreases along the propagation direction of the signal light to make the signal light
  • Gradually coupling from the lower waveguide into the upper amplifying waveguide can improve the coupling efficiency of signal light coupling from the lower waveguide into the upper amplifying waveguide
  • the core height of the second coupled waveguide portion (the second lower coupling region in Fig. 1d) remains unchanged
  • the core layer width of the second coupling waveguide portion gradually increases along the propagation direction of the signal light, and the coupling efficiency of the amplified signal light from the upper layer amplified waveguide coupling into the lower layer waveguide can be improved.
  • the gain material is a semiconductor material.
  • the semiconductor material when a carrier is injected into the semiconductor material, the semiconductor material amplifies the signal light by the carrier.
  • the semiconductor material is a direct bandgap semiconductor material such as gallium arsenide (GaAs), indium phosphide (lnP), or the like.
  • FIG. 7 As shown in FIG. 7, when carriers (electrons or holes) are injected into a semiconductor material, the concentration of free electrons in the semiconductor material is increased, and electrons at a low level are added. The number is greatly increased, and low-level electrons transition to high-energy levels in semiconductor materials (optionally, direct-bandgap semiconductors). When semiconductor materials are excited by signal light, high-energy electrons transition in the form of stimulated radiation. It returns to the low level and emits the same signal light as the wavelength of the signal light, thereby realizing the function of amplifying the signal light.
  • carriers electrons or holes
  • the concentration of free electrons in the semiconductor material is increased, and electrons at a low level are added. The number is greatly increased, and low-level electrons transition to high-energy levels in semiconductor materials (optionally, direct-bandgap semiconductors).
  • semiconductor materials When semiconductor materials are excited by signal light, high-energy electrons transition in the form of stimulated radiation. It returns to the low level and emits the same signal light as the wavelength of
  • FIG. 8 is a schematic structural diagram of another optical coupling system disclosed in the embodiment of the present application.
  • the optical coupling system includes an optical fiber array 10, an optoelectronic chip 30, and an optical coupling connector 20 as described in the system architecture shown in FIG. 1c, wherein:
  • the optical fiber array 10 includes N optical fibers, and the optoelectronic chip 30 includes N optical waveguides.
  • the optical coupling connector 20 may include an upper layer connector 201 and a lower layer connector 202.
  • the upper layer connector 201 includes N upper layer amplifying waveguides, and the lower layer connector 202
  • the N lower-layer waveguides are coupled to the N upper-layer amplifying waveguides in a one-to-one correspondence, and the N optical fibers of the optical fiber array 10 are connected to the N lower-layer waveguides of the optical coupling connector 20 in one-to-one correspondence, and the optical coupling connector 20 is connected.
  • N lower layers of waveguides are connected to the N optical waveguides of the optoelectronic chip 30 in one-to-one correspondence;
  • the N fibers of the optical fiber array 10 output N signal light to the N lower waveguides of the optical coupling connector 20, and the N lower waveguides respectively couple the N signal lights to the N upper amplification waveguides of the optical coupling connector 20, N
  • the upper amplifying waveguide amplifies the N signal lights and couples them to the N lower layer waveguides, and the N lower layer waveguides respectively output the amplified N signal lights to the N optical waveguides of the optoelectronic chip 30.
  • the optical coupling system shown in FIG. 8 is implemented.
  • the optical coupling connector 20 can amplify and output the multi-path signal light in the optical fiber array 10 into the optoelectronic chip 30.
  • the optical coupling connector 20 can not only the optical fiber array 10 and the optoelectronic chip 30.
  • the coupling connection is performed, and the signal light in the optical coupling connector 20 can be amplified, thereby solving the problem that the signal light loss in the optical coupling connector 20 is excessively large.
  • FIG. 9 is a schematic flowchart of a waveguide coupling method disclosed in an embodiment of the present application. As shown in FIG. 9, the waveguide coupling method is shown in FIG. Including the following steps:
  • the optical coupling connector receives N signal light output by the optical fiber array; and receives N pump light input by the pump light source; N is a positive integer greater than or equal to 2;
  • the optical coupling connector couples the N signal light and the N pump light one by one to form N coupling light
  • the optical coupling connector amplifies the signal light in each of the coupled lights, attenuates the pump light in each of the coupled lights, and outputs the signal light in each of the amplified coupling lights to the optoelectronic chip. .
  • the optical coupling connector is used to connect the optical fiber array and the optoelectronic chip
  • the optical coupling connector may include an upper connector and a lower connector, and the upper connector can receive the N signal light output by the optical fiber array, and the lower connector can Receiving N pump light input from the pump light source; after receiving the N signal light and the N pump light, the optical coupling connector couples the N signal light and the N pump light one-to-one to form an N-way coupling Light; the optical coupling connector amplifies the signal light in each of the coupled lights, attenuates the pump light in each of the coupled lights, and outputs the signal light in each of the amplified coupled lights to the optoelectronic chip.
  • the optical coupling connector can not only couple the optical fiber array with the optoelectronic chip, but also amplify the signal light in the optical coupling connector, thereby solving the problem that the signal light loss in the optical coupling connector is excessive.
  • the optical coupling connector includes N upper waveguides, and the optical coupling connectors respectively receive N pumping lights through the N upper waveguides.
  • the upper connector of the optical coupling connector may include N upper waveguides.
  • the optical coupling connector further includes N lower layer waveguides, each of the lower layer waveguides includes a coupling waveguide portion and a signal light amplifying waveguide portion, and the optical coupling connector turns the N signal light One-to-one coupling with N-channel pump light to form N-channel coupling light, including:
  • the coupling waveguide portion of the N lower-layer waveguides in the optical coupling connector couples the N-channel signal light and the N-channel pumping light one-to-one to form an N-way coupling light.
  • each of the N lower layer waveguides includes a coupling waveguide portion and a signal light amplifying waveguide portion, and further includes a pitch matching waveguide portion for matching between any two adjacent optical fibers in the light array
  • the coupled waveguide portion of one of the lower layer waveguides of the optical coupling connector receives one signal light outputted by the optical fiber array, and receives a corresponding pump light coupled by the upper waveguide, and couples one signal light to one pump light to form a coupling. Light.
  • the optical coupling connector amplifies the signal light in each of the coupled lights, attenuates the pump light in each of the coupled lights, and outputs the amplified signal light in each of the coupled lights to the optoelectronic chip, including :
  • the signal light amplifying waveguide in each of the lower waveguides in the optical coupling connector amplifies the signal light in each of the coupled lights, attenuates the pump light in each of the coupled lights, and amplifies the signals in each of the coupled lights Light is output to the optoelectronic chip.
  • the waveguide coupling method shown in FIG. 9 is implemented.
  • the optical coupling connector can amplify and output signal light in the light array to the optoelectronic chip, thereby solving the problem that the signal light loss in the optical coupling connector is excessive.
  • FIG. 10 is a schematic flowchart of another waveguide coupling method disclosed in the embodiment of the present application. As shown in FIG. The coupling method includes the following steps:
  • the lower layer connector receives N signal light output by the optical fiber array
  • the lower layer connector couples the N signal lights one by one to the upper layer connector
  • the upper connector amplifies the N signal lights and couples them to the lower connector.
  • the lower layer connector outputs the amplified N-channel signal light to the N optical waveguides of the optoelectronic chip.
  • the optical coupling connector may include an upper connector and a lower connector, wherein the lower connector receives the N signal light output by the optical fiber array, and couples the N signal light to the upper connector in a one-to-one correspondence; After receiving the N signal light, the upper connector respectively amplifies the N signal light and couples it to the lower layer connector; the lower layer connector outputs the amplified N signal light to the N optical waveguides of the optoelectronic chip.
  • the signal light in the optical coupling connector can be amplified, thereby solving the problem that the signal light loss in the optical coupling connector is excessive.
  • the lower layer connector includes N lower layer waveguides, each of the lower layer waveguides includes a first coupling waveguide portion and a second coupling waveguide portion, and the lower layer connector transmits N signals
  • a corresponding coupling to the upper connector includes:
  • the first coupled waveguide portion of the N lower waveguides in the lower connector couples the N signal lights one-to-one to the upper connector.
  • each of the N lower layer waveguides includes a pitch matching waveguide portion in addition to the first coupling waveguide portion and the second coupling waveguide portion, and the pitch matching waveguide portion is used to match any two adjacent ones of the light arrays The spacing between the fibers and the spacing between any two adjacent optical waveguides in the optoelectronic chip.
  • the upper connector amplifies the N signal lights separately and couples them to the lower layer connector, including:
  • the upper connector amplifies the N signal lights and couples them to the second coupled waveguide portion of the N lower waveguides of the lower connector.
  • the upper layer connector amplifies the N signal lights separately and is coupled to the lower layer connector, including:
  • the carrier is injected into the upper connector, the upper connector amplifies the N signal light by the carrier, and the amplified N signal light is respectively coupled to the second coupled waveguide of the N lower waveguides of the lower connector section.
  • carriers may include electrons or holes.
  • the waveguide coupling method shown in FIG. 10 is implemented.
  • the optical coupling connector can amplify and output the signal light in the light array to the optoelectronic chip, thereby solving the problem that the signal light loss in the optical coupling connector is excessive.

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Abstract

一种光耦合连接器、光耦合系统及波导耦合方法，该光耦合连接器(20)用于连接光纤阵列(10)和光电子芯片(30)，包括上层连接器(201)和下层连接器(202)，其中，上层连接器(201)包括N条上层波导(211,212,……)，N为大于或等于2的正整数；下层连接器(202)包括N条下层波导(221,222,……)，N条下层波导(221,222,……)与N条上层波导(211,212,……)一一对应耦合，每条下层波导均包括耦合波导部分、间距匹配波导部分和信号光放大波导部分。这种能够对信号光进行放大的光耦合连接器(20)，结构简单，尺寸小，制作工艺简单，可广泛用于光纤阵列(10)与光电子芯片(30)之间的耦合连接。

Description

光耦合连接器、光耦合系统及波导耦合方法 技术领域
本申请涉及通信技术领域，尤其涉及一种光耦合连接器、光耦合系统及波导耦合方法。
背景技术
在光通信领域中，光纤用于传输信号光，光电子芯片用于对接收的信号光进行调制、路由、复用等。为了获得更大的光通信容量，一般使用光纤阵列(包含多条光纤)传输信号光，由于制造工艺等原因，光纤阵列中的相邻光纤之间的间距较大，而光电子芯片(包含多条光波导)中的相邻光波导之间的间距较小，光纤阵列中的光纤无法与光电子芯片中的光波导进行连接，为了将光纤阵列中的信号光耦合至光电子芯片中，往往需要用到光耦合连接器。
光耦合连接器用于连接光纤阵列和光电子芯片，将光纤阵列传输的信号光输入光电子芯片。然而，信号光在光纤和光耦合连接器中传输时，由于吸收、散射等原因，导致信号光产生损耗。为了补偿信号光的损耗，目前常用的方案有两种，第一种方案为：采用掺铒光纤放大器(英文：Erbium-doped Optical Fiber Amplifier，EDFA)代替光耦合连接器，在光纤阵列和光电子芯片之间连接EDFA，对信号光进行放大耦合，第一种方案的缺点是，由于EDFA的体积较大，并且每条光纤需要单独使用一个EDFA，当光纤阵列中的光纤数量较多时，采用EDFA的耦合难度较大；第二种方案为：在光电子芯片上集成半导体光放大器(英文：Semiconductor Optical Amplifier，SOA)，通过SOA将光电子芯片接收的信号光进行放大，第二种方案的缺点是，由于SOA的热效应显著，需要在光电子芯片中安装温度控制器，并且由于SOA的制作工艺与光电子芯片中的互补金属氧化物半导体(英文：Complementary Metal Oxide Semiconductor，CMOS)工艺不兼容，在光电子芯片上集成SOA的工艺难度较大。
发明内容
本申请实施例公开了一种光耦合连接器、光耦合系统及波导耦合方法，可以解决光耦合连接器制作工艺复杂的问题。
本申请实施例第一方面公开一种光耦合连接器，用于连接光纤阵列和光电子芯片，包括上层连接器和下层连接器，其中：
所述上层连接器包括N条上层波导，所述N为大于或等于2的正整数；所述下层连接器包括N条下层波导，所述N条下层波导与所述N条上层波导一一对应耦合，每条下层波导均包括耦合波导部分、间距匹配波导部分和信号光放大波导部分；泵浦光源与所述N条上层波导连接，所述泵浦光源为所述N条上层波导提供N路泵浦光，所述光纤阵列包括N条光纤，所述N条光纤为所述N条下层波导提供N路信号光，所述光电子芯片包括N条光波导，所述N条下层波导的第一端与所述N条光纤一一对应连接，所述N条下层波导的第二端与所述N条光波导一一对应连接；所述N条上层波导将所述N路泵浦光一一耦合至对应的所述N条下层波导中；
所述每条下层波导均包括第一芯层和包覆所述第一芯层的第一包覆层，所述第一包覆层的材料包括增益材料，所述增益材料能够将所述泵浦光的能量传递给所述信号光，所述第一芯层的折射率大于所述第一包覆层的折射率。
其中，第一包覆层的材料采用增益材料，可以将信号光进行放大，同时，第一芯层的折射率大于第一包覆层的折射率，可以将信号光束缚在芯层中，减少信号光的传输损耗。
结合本申请实施例第一方面，在本申请实施例第一方面的第一种可能的实现方式中，上层波导i接收一路泵浦光，下层波导j接收所述光纤阵列发出的一路信号光；所述上层波导i将所述一路泵浦光耦合至对应的所述下层波导j的耦合波导部分，所述下层波导j的耦合波导部分将所述一路泵浦光与所述一路信号光组成的耦合光传输至所述下层波导j的间距匹配波导部分，所述下层波导j的间距匹配波导部分将所述耦合光传输至所述下层波导j的信号光放大波导部分，所述下层波导j的信号光放大波导部分放大所述耦合光中的所述一路信号光并衰减所述耦合光中的所述一路泵浦光，将放大后的所述一路信号光输出至所述光电子芯片；所述上层波导i为所述N条上层波导中的任一条，所述下层波导j为所述N条下层波导中的任一条。
结合本申请实施例第一方面的第一种可能的实现方式，在本申请实施例第一方面的第二种可能的实现方式中，所述N条下层波导中的任意两条相邻下层波导的第一端之间的间距与所述光纤阵列中任意两条相邻光纤之间的间距相等；所述N条下层波导中的任意两条相邻下层波导的第二端之间的间距与所述光电子芯片中任意两条相邻光波导之间的间距相等。
其中，实施本申请实施例第一方面的第二种可能的实现方式，可以减少信号光从光纤阵列传输至下层连接器时的耦合损耗，减少信号光从下层连接器传输至光电子芯片时的耦合损耗。
结合本申请实施例第一方面的第二种可能的实现方式，在本申请实施例第一方面的第三种可能的实现方式中，所述N条上层波导和所述N条下层波导均为矩形波导。
结合本申请实施例第一方面的第三种可能的实现方式，在本申请实施例第一方面的第四种可能的实现方式中，所述第一芯层的芯层高度和芯层宽度满足单模传输条件。
其中，实施本申请实施例第一方面的第四种可能的实现方式，第一芯层的芯层高度和芯层宽度满足单模传输条件，可以减少信号光在下层波导中的传输的损耗。
结合本申请实施例第一方面的第三种可能的实现方式，在本申请实施例第一方面的第五种可能的实现方式中，所述一路泵浦光的入射方向与所述上层波导i的横截面之间的夹角为90°；所述一路信号光的入射方向与所述下层波导j的横截面之间的夹角为90°；所述放大后的所述一路信号光的出射方向与所述光电子芯片中的光波导的横截面之间的夹角为90°。
其中，实施本申请实施例第一方面的第五种可能的实现方式，可以提高泵浦光从泵浦光源耦合至上层波导的耦合效率，提高信号光从光纤阵列耦合至下层波导的耦合效率，提高信号光从下层波导耦合至光电子芯片的耦合效率。
结合本申请实施例第一方面的第三种可能的实现方式，在本申请实施例第一方面的第六种可能的实现方式中，所述上层连接器还包括至少一个光分束器，每个光分束器用于连 接泵浦光源与M条上层波导，所述每个光分束器将所述泵浦光源发射的原始泵浦光分成M份输入到所述M条上层波导，所述M为小于或等于所述N的正整数。
其中，实施本申请实施例第一方面的第六种可能的实现方式，可以通过光分束器对泵浦光源发射的原始泵浦光进行分光，从而调整上层波导中泵浦光的强度，进而调整下层波导中信号光的放大倍数。
结合本申请实施例第一方面的第三种可能的实现方式，在本申请实施例第一方面的第七种可能的实现方式中，每条上层波导包括第二芯层和包覆所述第二芯层的第二包覆层，所述第二芯层用于传输所述泵浦光，所述第二芯层的折射率大于所述第二包覆层的折射率，所述第二芯层的宽度沿泵浦光的传播方向逐渐减小，所述第二芯层的高度保持不变。
其中，实施本申请实施例第一方面的第七种可能的实现方式，可以减少泵浦光在上层波导中的传输损耗，同时，第二芯层的宽度沿泵浦光的传播方向逐渐减小，第二芯层的高度保持不变，可以提高泵浦光从上层波导耦合至下层波导的耦合效率。
结合本申请实施例第一方面的第三种可能的实现方式，在本申请实施例第一方面的第八种可能的实现方式中，所述信号光放大波导部分的芯层宽度小于或等于所述耦合波导部分的芯层宽度。
其中，实施本申请实施例第一方面的第八种可能的实现方式，光耦合连接器可以与光纤阵列和光电子芯片更好的耦合。
结合本申请实施例第一方面的第三种可能的实现方式，在本申请实施例第一方面的第九种可能的实现方式中，所述信号光放大波导部分的芯层长度大于所述耦合波导部分的芯层长度。
其中，实施本申请实施例第一方面的第九种可能的实现方式，可以更好的放大信号光，衰减泵浦光，进一步的放大信号光。
结合本申请实施例第一方面的第三种至第九种中的任一种可能的实现方式，在本申请实施例第一方面的第十种可能的实现方式中，所述增益材料包括镱材料、铒材料或镱材料与铒材料的组合。铒材料或镱材料等稀土材料，可以对应光纤通信窗口的几个常用波段，如1550mm。
本申请实施例第二方面公开一种光耦合连接器，包括上层连接器和下层连接器，其中：
所述上层连接器包括N条上层放大波导，所述N为大于或等于2的正整数；所述下层连接器包括N条下层波导，所述N条下层波导与所述N条上层放大波导一一对应耦合，每条下层波导均包括第一耦合波导部分、第二耦合波导部分和间距匹配波导部分；所述光纤阵列包括N条光纤，所述N条光纤为所述N条下层波导提供N路信号光，所述光电子芯片包括N条光波导；所述N条下层波导的第一端与所述N条光纤一一对应连接，所述N条下层波导的第二端与所述N条光波导一一对应连接；
每条上层放大波导均包括第一芯层和包覆所述第一芯层的第一包覆层，所述第一芯层的材料包括增益材料，所述增益材料能够将下层波导耦合至对应的上层放大波导的信号光进行放大，所述第一芯层的折射率大于所述第一包覆层的折射率；
所述每条下层波导包括第二芯层和包覆所述第二芯层的第二包覆层，所述第二芯层用于传输所述信号光，所述第二芯层的折射率大于所述第二包覆层的折射率。
其中，实施本申请实施例第二方面，光耦合连接器可以将光纤阵列中的多路信号光放大并输出至光电子芯片中，解决了光耦合连接器中信号光损耗过大的问题。
结合本申请实施例第二方面，在本申请实施例第二方面的第一种可能的实现方式中，所述每条下层波导的第一耦合波导部分的芯层与第二耦合波导部分的芯层断开。
其中，实施本申请实施例第二方面的第一种可能的实现方式，可以节省芯层材料。
结合本申请实施例第二方面的第一种可能的实现方式，在本申请实施例第二方面的第二种可能的实现方式中，下层波导j接收所述光纤阵列发出的一路信号光，所述下层波导j的第一耦合波导部分将所述一路信号光耦合至对应的上层放大波导i，所述上层放大波导i将所述一路信号光进行放大后耦合至所述下层波导j的第二耦合波导部分，所述下层波导j的第二耦合波导部分将放大后的所述一路信号光传输至所述下层波导j的间距匹配波导部分，所述下层波导j的间距匹配波导部分将放大后的所述一路信号光传输至所述光电子芯片；所述上层放大波导i为所述N条上层放大波导中的任一条，所述下层波导j为所述N条下层波导中的任一条。
结合本申请实施例第二方面的第一种可能的实现方式，在本申请实施例第二方面的第三种可能的实现方式中，下层波导j接收所述光纤阵列发出的一路信号光，所述下层波导j的间距匹配波导部分将所述一路信号光传输至所述下层波导j的第一耦合波导部分，所述下层波导j的第一耦合波导部分将所述一路信号光耦合至对应的上层放大波导i，所述上层放大波导i将所述一路信号光进行放大后耦合至所述下层波导j的第二耦合波导部分，所述下层波导j的第二耦合波导部分将放大后的所述一路信号光传输至所述光电子芯片；所述上层放大波导i为所述N条上层放大波导中的任一条，所述下层波导j为所述N条下层波导中的任一条。
结合本申请实施例第二方面的第二种可能的实现方式，在本申请实施例第二方面的第四种可能的实现方式中，所述N条下层波导中的任意两条相邻下层波导的第一耦合波导部分之间的间距与所述光纤阵列中任意两条相邻光纤之间的间距相等；所述N条下层波导中的任意两条相邻下层波导的间距匹配波导部分之间的最小间距与所述光电子芯片中任意两条相邻光波导之间的间距相等。
其中，实施本申请实施例第二方面的第四种可能的实现方式，可以减少信号光从光纤阵列传输至下层连接器时的耦合损耗，减少信号光从下层连接器传输至光电子芯片时的耦合损耗。
结合本申请实施例第二方面的第三种可能的实现方式，在本申请实施例第二方面的第五种可能的实现方式中，所述N条下层波导中的任意两条相邻下层波导的间距匹配波导部分之间的最大间距与所述光纤阵列中任意两条相邻光纤之间的间距相等；所述N条下层波导中的任意两条相邻下层波导的第二耦合波导部分之间的间距与所述光电子芯片中任意两条相邻光波导之间的间距相等。
其中，实施本申请实施例第二方面的第五种可能的实现方式，可以减少信号光从光纤阵列传输至下层连接器时的耦合损耗，减少信号光从下层连接器传输至光电子芯片时的耦合损耗。
结合本申请实施例第二方面的第一种可能的实现方式，在本申请实施例第二方面的第六种可能的实现方式中，所述N条上层放大波导和所述N条下层波导均为矩形波导，所述第 一芯层的芯层高度和芯层宽度满足单模传输条件，所述第二芯层的芯层高度和芯层宽度满足单模传输条件。
其中，实施本申请实施例第二方面的第六种可能的实现方式，可以减少信号光在下层波导中的传输的损耗。
结合本申请实施例第二方面的第六种可能的实现方式，在本申请实施例第二方面的第七种可能的实现方式中，所述第一耦合波导部分的芯层高度保持不变，所述第一耦合波导部分的芯层宽度沿信号光的传播方向逐渐减小；所述第二耦合波导部分的芯层高度保持不变，所述第二耦合波导部分的芯层宽度沿信号光的传播方向逐渐增大。
其中，实施本申请实施例第二方面的第七种可能的实现方式，可以提高信号光从下层波导的第一耦合波导部分耦合至上层放大波导的耦合效率，同时提高放大后的信号光从上层放大波导耦合至下层波导的第二耦合波导部分的耦合效率。
结合本申请实施例第二方面或本申请实施例第二方面的第一种至第七种中的任一种可能的实现方式，在本申请实施例第一方面的第八种可能的实现方式中，所述增益材料为半导体材料。可选的，半导体材料为直接带隙半导体材料，如砷化镓(GaAs)、磷化铟(lnP)等。
结合本申请实施例第一方面的第八种可能的实现方式，在本申请实施例第一方面的第九种可能的实现方式中，当所述半导体材料中注入载流子时，所述半导体材料通过所述载流子将所述信号光进行放大。
本申请实施例第三方面公开一种光耦合系统，包括光纤阵列、光电子芯片、至少一个激光器和本申请实施例第一方面公开的任一种光耦合连接器，其中：
所述光纤阵列包括N条光纤，所述光电子芯片包括N条光波导，所述光耦合连接器包括N条上层波导和N条下层波导，所述N条下层波导与所述N条上层波导一一对应耦合，所述光纤阵列的所述N条光纤与所述光耦合连接器的所述N条下层波导一一对应连接，所述光耦合连接器的所述N条下层波导与所述光电子芯片的N条光波导一一对应连接，所述至少一个激光器与所述N条上层波导连接；
所述至少一个激光器输出N路泵浦光至所述N条上层波导，所述N条光纤输出N路信号光至所述N条下层波导，所述光耦合连接器将所述N路泵浦光分别耦合至所述N条下层波导，所述N条下层波导将所述N路泵浦光分别与所述N路信号光进行耦合放大，并分别输出至所述光电子芯片的所述N条光波导。
其中，实施本申请实施例第三方面，光耦合连接器不仅可以将光纤阵列与光电子芯片进行耦合连接，而且可以通过泵浦光将光耦合连接器中的信号光进行放大，解决了光耦合连接器中信号光损耗过大的问题。
本申请实施例第四方面公开一种波导耦合方法，应用于本申请实施例第一方面公开的任一种光耦合连接器，包括：
光耦合连接器接收光纤阵列输出的N路信号光；接收泵浦光源输入的N路泵浦光；所述N为大于或等于2的正整数；
所述光耦合连接器将所述N路信号光与所述N路泵浦光一一对应耦合，形成N路耦合光；
针对每路耦合光，所述光耦合连接器放大所述每路耦合光中的信号光，衰减所述每路耦合光中的泵浦光，并将放大后的所述每路耦合光中的信号光输出至光电子芯片。
其中，实施本申请实施例第四方面，光耦合连接器可以将泵浦光与信号光进行耦合，并将信号光进行放大输出至光电子芯片，实现了信号光在光耦合连接器中的放大。
结合本申请实施例第四方面，在本申请实施例第四方面的第一种可能的实现方式中，所述光耦合连接器包括N条上层波导，所述光耦合连接器通过所述N条上层波导分别接收N路泵浦光。
结合本申请实施例第四方面的第一种可能的实现方式，在本申请实施例第四方面的第二种可能的实现方式中，所述光耦合连接器还包括N条下层波导，所述N条下层波导中的每条下层波导包括耦合波导部分和信号光放大波导部分，所述光耦合连接器将所述N路信号光与所述N路泵浦光一一对应耦合，形成N路耦合光，包括：
所述光耦合连接器中的所述N条下层波导中的耦合波导部分将所述N路信号光与所述N路泵浦光一一对应耦合，形成N路耦合光。
结合本申请实施例第四方面的第二种可能的实现方式，在本申请实施例第四方面的第三种可能的实现方式中，所述光耦合连接器放大所述每路耦合光中的信号光，衰减所述每路耦合光中的泵浦光，并将放大后的所述每路耦合光中的信号光输出至光电子芯片，包括：
所述光耦合连接器中的每条下层波导中的信号光放大波导部分放大所述每路耦合光中的信号光，衰减所述每路耦合光中的泵浦光，并将放大后的所述每路耦合光中的信号光输出至光电子芯片。
本申请实施例第五方面公开一种光耦合系统，包括光纤阵列、光电子芯片和本申请实施例第二方面公开的任一种光耦合连接器，其中：
所述光纤阵列包括N条光纤，所述光电子芯片包括N条光波导，所述光耦合连接器包括N条上层放大波导和N条下层波导，所述N条下层波导与所述N条上层放大波导一一对应耦合，所述光纤阵列的所述N条光纤与所述光耦合连接器的所述N条下层波导一一对应连接，所述光耦合连接器的所述N条下层波导与所述光电子芯片的N条光波导一一对应连接；
所述光纤阵列的所述N条光纤输出N路信号光至所述光耦合连接器的N条下层波导，所述N条下层波导将所述N路信号光分别耦合至所述光耦合连接器的N条上层放大波导，所述N条上层放大波导将所述N路信号光分别放大后耦合至所述N条下层波导，所述N条下层波导将放大后的所述N路信号光分别输出至所述光电子芯片的所述N条光波导。
其中，实施本申请实施例第五方面，光耦合连接器不仅可以将光纤阵列与光电子芯片进行耦合连接，而且可以通过上层放大波导将光耦合连接器中的信号光进行放大，解决了光耦合连接器中信号光损耗过大的问题。
本申请实施例第六方面公开一种波导耦合方法，应用于本申请实施例第二方面公开的任一种光耦合连接器，包括：
下层连接器接收光纤阵列输出的N路信号光；
所述下层连接器将所述N路信号光一一对应耦合至上层连接器；所述上层连接器将所述N路信号光分别放大后耦合至所述下层连接器；
所述下层连接器将放大后的所述N路信号光分别输出至所述光电子芯片的所述N条光 波导。
其中，实施本申请实施例第六方面，上层连接器可以将下层连接器耦合进来的信号光进行放大后，再次耦合进入下层连接器，实现了信号光在上层连接器中的放大。
结合本申请实施例第六方面，在本申请实施例第六方面的第一种可能的实现方式中，所述下层连接器包括N条下层波导，所述N条下层波导中的每条下层波导包括第一耦合波导部分和第二耦合波导部分，所述下层连接器将所述N路信号光一一对应耦合至上层连接器，包括：
所述下层连接器中的所述N条下层波导的第一耦合波导部分将所述N路信号光一一对应耦合至上层连接器。
结合本申请实施例第六方面的第一种可能的实现方式，在本申请实施例第六方面的第二种可能的实现方式中，所述上层连接器将所述N路信号光分别放大后耦合至所述下层连接器，包括：
向所述上层连接器内注入载流子，所述上层连接器利用所述载流子将所述N路信号光分别放大，并将放大后的所述N路信号光分别耦合至所述下层连接器的N条下层波导的第二耦合波导部分。
本申请实施中的光耦合连接器包括上层连接器和下层连接器，上层连接器包括N条上层波导，下层连接器包括N条下层波导，N条下层波导与N条上层波导一一对应耦合，每条下层波导均包括耦合波导部分、间距匹配波导部分和信号光放大波导部分。本申请实施中的光耦合连接器的上层波导可以将泵浦光耦合至对应的下层波导，下层波导的耦合波导部分将光纤阵列发出的信号光与上层波导耦合进来的泵浦光组成耦合光并传输至间距匹配波导部分，间距匹配波导部分用于调整相邻下层波导之间的间距，间距匹配波导部分将接收的耦合光传输至信号光放大波导部分，信号光放大波导部分放大耦合光中的信号光并衰减耦合光中的泵浦光，将放大后的信号光输出至光电子芯片。与现有技术相比，本申请实施中的光耦合连接器可以将光纤阵列中的多路信号光分别进行放大并输出至光电子芯片，同时，本申请实施中的光耦合连接器结构简单，尺寸小，制作工艺简单，可广泛用于光纤阵列与光电子芯片之间的耦合连接。
附图说明
为了更清楚地说明本申请实施例中的技术方案，下面将对实施例中所需要使用的附图作简单地介绍，显而易见地，下面描述中的附图仅仅是本申请的一些实施例，对于本领域普通技术人员来讲，在不付出创造性劳动的前提下，还可以根据这些附图获得其他的附图。
图1a是本申请实施例公开的一种系统架构示意图；
图1b为本申请实施例公开的一种上层波导与下层波导的耦合连接示意图；
图1c是本申请实施例公开的另一种系统架构示意图；
图1d为本申请实施例公开的一种上层放大波导与下层波导的耦合连接示意图；
图2a是本申请实施例公开的一种光耦合连接器的结构示意图；
图2b是本申请实施例公开的另一种光耦合连接器的结构示意图；
图2c是本申请实施例公开的另一种光耦合连接器的结构示意图；
图3是本申请实施例公开的一种上层波导与下层波导耦合结构示意图；
图4是本申请实施例公开的一种信号光放大原理示意图；
图5是本申请实施例公开的一种光耦合系统的结构示意图；
图6是本申请实施例公开的另一种光耦合连接器的结构示意图；
图6a是本申请实施例公开的又一种光耦合连接器的结构示意图；
图6b是本申请实施例公开的又一种光耦合连接器的结构示意图；
图6c是本申请实施例公开的又一种光耦合连接器的结构示意图；
图6d是本申请实施例公开的又一种光耦合连接器的结构示意图；
图7是本申请实施例公开的另一种信号光放大原理示意图；
图8是本申请实施例公开的另一种光耦合系统的结构示意图；
图9是本申请实施例公开的一种波导耦合方法的流程示意图；
图10是本申请实施例公开的另一种波导耦合方法的流程示意图。
具体实施方式
下面将结合本申请实施例中的附图，对本申请实施例中的技术方案进行清楚、完整地描述，显然，所描述的实施例仅是本申请一部分实施例，而不是全部的实施例。基于本申请中的实施例，本领域普通技术人员在没有做出创造性劳动前提下所获得的所有其他实施例，都属于本申请保护的范围。
本申请实施例公开了一种光耦合连接器、光耦合系统及波导耦合方法，可以解决光耦合连接器制作工艺复杂的问题。以下分别进行详细说明。
为了更好的理解本申请实施例，下面先对本申请实施例公开的系统架构进行描述。
请参阅图1a，图1a是本申请实施例公开的一种系统架构示意图。如图1a所示，该系统架构包括光纤阵列10、光耦合连接器20、光电子芯片30和泵浦光源40，其中，光纤阵列10包括N条光纤(101、102...)，光耦合连接器20中可以包括上层连接器201和下层连接器202，上层连接器201包括N条上层波导(211、212…)，下层连接器包括N条下层波导(221、222…)，光电子芯片包括N条光波导(301、302...)。波导是用于传输电磁波的装置，每条波导可以独立的传输一路电磁波信号，波导的形状可以是矩形、圆形等，波导的材质可以为对电磁波传输损耗较小的材质，例如，对光信号传输损耗较小的二氧化硅。
光纤阵列10中的一条光纤(例如，光纤101)连接一条下层波导(例如，下层波导221)的一端，一条下层波导(例如，下层波导221)的另一端连接光电子芯片30中的一条光波导(例如，光波导301)，一条上层波导(211)位于一条下层波导(例如，下层波导221)的上层，如图1a中的虚线框部分(放大后的上层波导211和对应的下层波导221的连接关系图)；其中，每条光纤连接的下层波导互不相同(即，一条光纤对应连接一条下层波导，例如，光纤101对应连接下层波导221)，每条下层波导连接的光波导互不相同(即，一条下层波导对应连接一条光波导，例如，下层波导221对应连接光波导301)；一条上层波导与一条下层波导对应耦合(例如，上层波导211与下层波导221对应耦合)，其中，上层波导211与下层波导221的耦合方式可以为垂直耦合方式，如图1b所示，图1b为本申请实施例公开的一种上层波导与下层波导的耦合连接示意图，图1b中，以矩形波导为例，上层波导211的上层耦合 区与下层波导221的下层耦合区进行耦合，以使泵浦光从上层波导211的上层耦合区耦合至下层波导221的下层耦合区，当泵浦光进入上层波导211的上层耦合区时，在泵浦光的传输方向上，由于上层耦合区的宽度逐渐变窄，上层波导211无法将泵浦光限制在上层耦合区中，泵浦光不断从上层耦合区中逃逸出来，进入到下层波导221的下层耦合区，下层波导221不断收集上层波导221中逃逸出来的泵浦光，从而逐渐将泵浦光从上层波导211耦合进入下层波导221。
泵浦光源40为N条上层波导(211、212…)提供N路泵浦光，其中，泵浦光源40可以为激光器(如，半导体激光器)、发光二极管等，每一条上层波导接收一路泵浦光；光纤阵列10中的N条光纤(101、102...)为N条下层波导(221、222…)提供N路信号光，其中，每一条下层波导接收一路信号光；N条上层波导将N路泵浦光分别耦合至N条下层波导，其中，每一条上层波导将接收的泵浦光耦合至对应的一条下层波导中；对于N条下层波导中的任一条下层波导，该任一条下层波导将接收的信号光与泵浦光进行耦合，衰减该泵浦光，放大该信号光，并将放大后的该信号光输出至光电子芯片30中。
实施图1a所示的系统架构，光耦合连接器20可以将光纤阵列10中的多路信号光放大并输出至光电子芯片30中，光耦合连接器20不仅可以将光纤阵列10与光电子芯片30进行耦合，而且可以将光耦合连接器20中的信号光进行放大，解决了光耦合连接器20中信号光损耗过大的问题。
请参阅图1c，图1c是本申请实施例公开的另一种系统架构示意图。如图1c所示，该系统架构包括光纤阵列10、光耦合连接器20和光电子芯片30，其中，光纤阵列10包括N条光纤(101、102...)，光耦合连接器20中可以包括上层连接器201和下层连接器202，上层连接器201包括N条上层放大波导(211、212…)，下层连接器包括N条下层波导(221、222…)，光电子芯片包括N条光波导(301、302...)。波导是用于传输电磁波的装置，每条波导可以独立的传输一路电磁波信号，波导的形状可以是矩形、圆形等，N条下层波导的芯层材质可以为对电磁波传输损耗较小的材质，例如，对光信号传输损耗较小的二氧化硅(SiO2)，N条上层放大波导的芯层材质可以为半导体材料，可选的，为直接带隙半导体材料，如砷化镓(GaAs)、磷化铟(lnP)等。
光纤阵列10中的一条光纤(例如，光纤101)连接一条下层波导(例如，下层波导221)的一端，一条下层波导(例如，下层波导221)的另一端连接光电子芯片30中的一条光波导(例如，光波导301)，一条上层放大波导(211)位于一条下层波导(例如，下层波导221)的上层，如图1c中的虚线框部分(放大后的上层放大波导211和对应的下层波导221的连接关系图)；其中，每条光纤连接的下层波导互不相同(即，一条光纤对应连接一条下层波导，例如，光纤101对应连接下层波导221)，每条下层波导连接的光波导互不相同(即，一条下层波导对应连接一条光波导，例如，下层波导221对应连接光波导301)；一条上层放大波导与一条下层波导对应耦合(例如，上层放大波导211与下层波导221对应耦合)，其中，上层放大波导211与下层波导221的耦合方式可以为垂直耦合方式，如图1d所示，图1d为本申请实施例公开的一种上层放大波导与下层波导的耦合连接示意图，图1d中，以矩形波导为例，上层放大波导211的上层耦合区(包括第一上层耦合区和第二上层耦合区)与下层波导221的下层耦合区(包括第一下层耦合区和第二下层耦合区)进行耦合，以使信号光从下层波 导221的第一下层耦合区耦合至上层放大波导211的第一上层耦合区，上层放大波导211的放大区将信号光进行放大后从第二上层耦合区耦合至下层波导221的第二下层耦合区。当信号光从下层波导221的第一下层耦合区进入上层放大波导211的第一上层耦合区时，在信号光的传输方向上，由于第一下层耦合区的宽度逐渐变窄，第一上层耦合区的宽度逐渐变宽，下层波导221无法将信号光限制在第一下层耦合区中，信号光不断的从第一下层耦合区逃逸出来，进入上层放大波导211的第一上层耦合区中，上层放大波导211不断收集下层波导221中逃逸出来的信号光，从而逐渐将信号光从下层波导221耦合进入上层放大波导211，当信号光进入上层放大波导211后，上层放大波导211的放大区对信号光进行放大，信号光放大后，通过上层放大波导211的第二上层耦合区进入下层波导221的第二下层耦合区，同理，在信号光的传输方向上，由于第二上层耦合区的宽度逐渐变窄，第二下层耦合区的宽度逐渐变宽，放大后的信号光不断的从第二上层耦合区逃逸出来，进入下层波导221的第二下层耦合区，从而通过上层放大波导实现对信号光的放大。
实施图1c所示的系统架构，光耦合连接器20可以将光纤阵列10中的多路信号光放大并输出至光电子芯片30中，光耦合连接器20不仅可以将光纤阵列10与光电子芯片30进行耦合，而且可以将光耦合连接器20中的信号光进行放大，解决了光耦合连接器20中信号光损耗过大的问题。本申请实施例中的光耦合连接器是一种能够对信号光进行放大的光耦合连接器。
基于图1a所示的系统架构，公开了一种光耦合连接器，请参阅图2a，图2a是本申请实施例公开的一种光耦合连接器的结构示意图。该光耦合连接器20用于连接光纤阵列10和光电子芯片30，该光耦合连接器20包括上层连接器201和下层连接器202，其中：
上层连接器201包括N条上层波导，N为大于或等于2的正整数；下层连接器202包括N条下层波导，N条下层波导与N条上层波导一一对应耦合，每条下层波导均包括耦合波导部分、间距匹配波导部分和信号光放大波导部分；泵浦光源40与N条上层波导(如图2a中的211、212…)连接，泵浦光源40为N条上层波导提供N路泵浦光，光纤阵列包括N条光纤(如图2a中的101、102…)，N条光纤为N条下层波导(如图2a中的221、222…)提供N路信号光，光电子芯片包括N条光波导(如图2a中的301、302…)，N条下层波导的第一端与N条光纤一一对应连接，N条下层波导的第二端与N条光波导一一对应连接。例如，如图2a所示，耦合波导部分、间距匹配波导部分和信号光放大波导部分依次连接，N条光纤与N条下层波导靠近耦合波导部分的一端一一对应连接，N条光波导与N条下层波导靠近信号光放大波导部分的一端一一对应连接；或者，如图2b所示，耦合波导部分、信号光放大波导部分和间距匹配波导部分依次连接，N条光纤与N条下层波导靠近耦合波导部分的一端一一对应连接，N条光波导与N条下层波导靠近间距匹配波导部分的一端一一对应连接；或者，如图2c所示，间距匹配波导部分、耦合波导部分和信号光放大波导部分依次连接，N条光纤与N条下层波导靠近间距匹配波导部分的一端一一对应连接，N条光波导与N条下层波导靠近信号光放大波导部分的一端一一对应连接。
每条下层波导均包括第一芯层和第一包覆层，第一包覆层的材料包括增益材料，增益材料能够将泵浦光的能量传递给信号光，第一芯层的折射率大于第一包覆层的折射率。
其中，增益材料在泵浦光的激励下，可以将泵浦光的能量传递给信号光，实现将信号光放大的功能，第一芯层的折射率大于第一包覆层的折射率，可以保证信号光在下层波导 的第一芯层中传输时，能够满足全反射条件，将信号光束缚在芯层中，减少信号光的传输损耗。第一芯层的材料可以为硅、二氧化硅、氮化硅、聚合物等，增益材料可以为掺杂铒离子、镱离子等稀土离子的材料。可选的，每条下层波导的耦合波导部分与间距匹配波导部分的包覆层使用的增益材料的增益效果较小，每条下层波导的信号光放大波导部分使用的增益材料的增益效果较大。
本申请实施例中，上层连接器201将泵浦光源40产生的N路泵浦光分别输入N条上层波导中，N条上层波导将N路泵浦光分别耦合至对应的N条下层波导中，下层连接器202将N条光纤输入的N路信号光与N路泵浦光一一对应耦合，形成N路耦合光，并将N路耦合光中的信号光分别放大并一一对应输入光电子芯片30的N条光波导中。图2a所示光耦合连接器20可以将光纤阵列10中的多路信号光放大并输出至光电子芯片30中，解决了光耦合连接器20中信号光损耗过大的问题，图2a所示的光耦合连接器20结构简单，尺寸小，制作工艺简单，制作成本较低。在一个实施例中，如图2a所示，上层波导i(如图2a中的21i)接收一路泵浦光，下层波导j(如图2a中的22j)接收光纤阵列10发出的一路信号光；上层波导i将一路泵浦光耦合至对应的下层波导j的耦合波导部分，下层波导j的耦合波导部分将一路泵浦光与一路信号光组成的耦合光传输至下层波导j的间距匹配波导部分，下层波导j的间距匹配波导部分将耦合光传输至下层波导j的信号光放大波导部分，下层波导j的信号光放大波导部分放大耦合光中的一路信号光并衰减耦合光中的一路泵浦光，将放大后的一路信号光输出至光电子芯片30；上层波导i为N条上层波导中的任一条，下层波导j为N条下层波导中的任一条。
本申请实施例中，上层波导可以为矩形波导(如，方形波导)、圆形波导、脊型波导等，N条上层波导可以位于同一平面(如、平面光波导)，N条下层波导与N条上层波导一一对应耦合，例如，如图3所示，图3是本申请实施例公开的一种上层波导与下层波导耦合结构示意图，图3以矩形波导为例，上层波导的横截面与下层波导的横截面均为矩形，上层波导1与下层波导1对应耦合，上层波导2与下层波导2对应耦合，上层波导i与下层波导j对应耦合，等等，其中，相邻的上层波导之间有间距，相邻的下层波导之间有间距。
以上层波导i和下层波导j为例，阐述光耦合连接器20的信号光放大原理，上层波导i为N条上层波导中的任一条，下层波导j为N条下层波导中的任一条。请参阅图2a，上层连接器201中的上层波导i(如图2a中的21i)接收一路泵浦光，下层波导j(如图2a中的22j)接收光纤阵列10发出的一路信号光；上层波导i将一路泵浦光耦合至对应的下层波导j的耦合波导部分，下层波导j的耦合波导部分将一路泵浦光与一路信号光组成的耦合光传输至下层波导j的间距匹配波导部分，下层波导j的间距匹配波导部分将耦合光传输至下层波导j的信号光放大波导部分，下层波导j的信号光放大波导部分放大耦合光中的一路信号光并衰减耦合光中的一路泵浦光，将放大后的一路信号光输出至光电子芯片30；图2a所示光耦合连接器20可以将光纤阵列10中的多路信号光放大并输出至光电子芯片30中，解决了光耦合连接器20中信号光损耗过大的问题，图2a所示的光耦合连接器20结构简单，尺寸小，制作工艺简单，制作成本较低。
在一个实施例中，如图2a所示，N条下层波导中的任意两条相邻下层波导的耦合波导部分之间的间距与光纤阵列中任意两条相邻光纤之间的间距相等；N条下层波导中的任意两条相邻下层波导的相邻信号光放大波导部分之间的间距与光电子芯片中任意两条相邻光 波导之间的间距相等。
其中，N条下层波导中的任意两条相邻下层波导的耦合波导部分之间的间距与光纤阵列10中任意两条相邻光纤之间的间距相等，可以保证光纤阵列10与光耦合连接器20的下层连接器202的一端(靠近耦合波导部分的一端)进行较好的耦合，减少信号光从光纤阵列10传输至下层连接器202时的耦合损耗；N条下层波导中的任意两条相邻下层波导的相邻信号光放大波导部分之间的间距与光电子芯片30中任意两条相邻光波导之间的间距相等，可以保证光耦合连接器20的下层连接器202的另一端(靠近信号光放大波导部分的一端)与光电子芯片30进行较好的耦合，减少信号光从下层连接器202传输至光电子芯片30时的耦合损耗。当光纤阵列10中任意两条相邻光纤之间的间距确定之后，N条下层波导中的任意两条相邻下层波导的耦合波导部分之间的间距也随之确定，可以通过调整间距匹配波导部分的弯曲度来调整N条下层波导中的任意两条相邻下层波导的相邻信号光放大波导部分之间的间距，以使N条下层波导中的任意两条相邻下层波导的相邻信号光放大波导部分之间的间距与光电子芯片30中任意两条相邻光波导之间的间距相等。
可选的，上层波导的芯层折射率与下层波导的芯层折射率相等，且等于光纤阵列中光纤的芯层折射率，其中，上层波导的芯层折射率与下层波导的芯层折射率相等，可以提高泵浦光从上层波导耦合至下层波导的耦合效率，上层波导的芯层折射率与光纤阵列中光纤的芯层折射率相等，可以提高信号光从光纤耦合至下层波导的耦合效率。
在一个实施例中，如图2a所示，N条上层波导和N条下层波导均为矩形波导。
在一个实施例中，如图2a所示，第一芯层的芯层高度和芯层宽度满足单模传输条件。
其中，第一芯层的芯层高度和芯层宽度满足单模传输条件，即，信号光在下层波导中仅以一个模式进行传输，可以减少信号光在下层波导中的传输损耗。例如，对于矩形波导而言，若第一芯层的材料为硅、折射率为3.5，第一包覆层材料为二氧化硅、折射率为1.445，矩形波导的高度为220nm，则根据矩形波导的单模条件公式可以计算出矩形波导的宽度范围为200nm～700nm时，第一芯层的芯层高度和芯层宽度满足单模传输条件。对于圆形波导而言，可以通过设置信号光的入射角度与芯层半径以使信号光满足单模传输条件。
在一个实施例中，如图2a所示，一路泵浦光的入射方向与上层波导i的横截面之间的夹角为90°；一路信号光的入射方向与下层波导j的横截面之间的夹角为90°；放大后的一路信号光的出射方向与光电子芯片中的光波导的横截面之间的夹角为90°。
其中，一路泵浦光的入射方向与上层波导i的横截面之间的夹角为90°，可以将一路泵浦光较好的耦合至上层波导i中，提高泵浦光从泵浦光源耦合至上层波导的耦合效率；一路信号光的入射方向与下层波导j的横截面之间的夹角为90°，可以将一路信号光较好的耦合至下层波导j中，提高信号光从上层波导耦合至下层波导的耦合效率；放大后的一路信号光的出射方向与光电子芯片30中的光波导的横截面之间的夹角为90°，可以将放大后的一路信号光较好的耦合至光电子芯片30中，提高信号光从下层波导耦合至光电子芯片30的耦合效率。
在一个实施例中，如图2a所示，上层连接器还包括至少一个光分束器，每个光分束器用于连接泵浦光源与M条上层波导，每个光分束器将泵浦光源发射的原始泵浦光分成M份输入到M条上层波导，M为小于或等于N的正整数。
其中，每个光分束器可以将泵浦光源发射的原始泵浦光分成M份输入到M条上层波导，泵浦光源可以为激光器(如，半导体激光器)，可选的，泵可以将原始泵浦光均分成M份输入到M条上层波导，例如，激光器输出功率为200mW，M为4，则激光器可以将200mW的功率均分为4份输入到4条上层波导中。
在一个实施例中，如图2a所示，每条上层波导包括第二芯层和包覆第二芯层的第二包覆层，第二芯层用于传输泵浦光，第二芯层的折射率大于第二包覆层的折射率，第二芯层的宽度沿泵浦光的传播方向逐渐减小，第二芯层的高度保持不变。
其中，第二芯层的折射率大于第二包覆层的折射率，可以保证泵浦光在上层波导的第二芯层中传输时，能够满足全反射条件，将泵浦光束缚在芯层中，减少泵浦光在上层波导中的传输损耗，第二芯层的宽度沿泵浦光的传播方向逐渐减小，第二芯层的高度保持不变，可以将上层波导中的泵浦光快速耦合至下层波导中，提高泵浦光从上层波导耦合至下层波导的耦合效率。第二芯层的材料可以为硅、二氧化硅、氮化硅、聚合物等。可选的，上层波导(如图2a中的21i)与对应的下层波导(如图2a中的22j)之间的包覆层高度尽可能的小，可以减小泵浦光在包覆层中的损耗，从而提高提高泵浦光从上层波导耦合至下层波导的耦合效率。
在一个实施例中，如图2a所示，信号光放大波导部分的芯层宽度小于或等于耦合波导部分的芯层宽度。
其中，由于光纤阵列10中的光纤芯层尺寸较大，光电子芯片30中的光波导的芯层尺寸较小，光耦合连接器20中的下层连接器202为了匹配光纤阵列10和光电子芯片30，下层连接器202中下层波导的耦合波导部分的芯层宽度与光纤阵列10中光纤的芯层宽度匹配，下层连接器202中下层波导的信号光放大波导部分的芯层宽度与光电子芯片30中光波导的芯层宽度匹配，从而可以通过光耦合连接器20将光纤阵列10与光电子芯片30耦合连接。
在一个实施例中，如图2a所示，信号光放大波导部分的芯层长度大于耦合波导部分的芯层长度。
其中，在信号光放大波导部分，泵浦光逐渐衰减，信号光逐渐放大，信号光放大波导部分的芯层长度越大，泵浦光越少，信号光越大，当信号光放大波导部分的芯层长度大于耦合波导部分的芯层长度时，可以尽可能衰减泵浦光，放大信号光。
在一个实施例中，如图2a所示，增益材料包括镱材料、铒材料或镱材料与铒材料的组合。
其中，镱材料为掺杂镱离子的材料，铒材料为掺杂铒离子的材料，镱材料与铒材料的组合为同时掺杂镱离子和铒离子的材料。镱离子、铒离子等稀土离子为激活离子，用于将泵浦光的能量传递给信号光，以镱材料为例，如图4所示，图4是本申请实施例公开的一种信号光放大原理示意图，若泵浦光的波长为980nm，信号光的波长为1550nm时，镱材料中的镱离子吸收980nm的泵浦光后从基态跃迁到激发态，由于镱离子在激发态不稳定，很快从激发态跃迁到亚稳态，当镱离子在信号光的激发下，镱离子从亚稳态以受激辐射的形式跃迁回基态，并发射出与信号光波长相同的1550nm的信号光，从而实现将信号光放大的功能。
基于图1a所示的系统架构，公开了一种光耦合系统，请参阅图5，图5是本申请实施例 公开的一种光耦合系统的结构示意图。如图5所示，该系统架构包括光纤阵列10、图1a所示的系统架构中描述的光耦合连接器20、光电子芯片30和至少一个激光器(401、402…)，其中，光纤阵列10中包括N条光纤(101、102...)，光耦合连接器20中可以包括上层连接器201和下层连接器202，上层连接器201包括至少一个光分束器(2011、2012…)和N条上层波导(211、212…)，下层连接器包括N条下层波导(221、222…)，光电子芯片包括N条光波导(301、302...)；
一个激光器401(以激光器#1为例)连接一个光分束器2011(以光分束器#1为例)，一个光分束器2011连接M条上层波导，其中，M、N均为正整数，且M小于或等于N；光纤阵列中的一条光纤(例如，光纤101)连接一条下层波导(例如，下层波导221)的一端，一条下层波导(例如，下层波导221)的另一端连接光电子芯片30中的一条光波导(例如，光波导301)，其中，每条光纤连接的下层波导互不相同(即，一条光纤对应连接一条下层波导，例如，光纤101对应连接下层波导221)，每条下层波导连接的光波导互不相同(即，一条下层波导对应连接一条光波导，例如，下层波导221对应连接光波导301)；一条上层波导对应一条下层波导(例如，上层波导211对应下层波导221)；
一个激光器401(以激光器#1为例)产生的原始泵浦光输入到一个光分束器2011(以光分束器#1为例)中，一个光分束器2011将该原始泵浦光分成M份输出至M条上层波导，其中，M条上层波导中的一条上层波导(例如，上层波导211)将接收的泵浦光耦合至对应的一条下层波导(例如，下层波导221)中，对应的一条下层波导(例如，下层波导221)将光纤阵列中的一条光纤(如光纤10)输入的信号光与该泵浦光耦合，并将该泵浦光转化为信号光，从而衰减该泵浦光，放大信号光，将放大后的信号光输出至光电子芯片30中的一条光波导(光波导301)中。
实施图5所示的光耦合系统，光耦合连接器20可以将光纤阵列10中的多路信号光放大并输出至光电子芯片30中，光耦合连接器20不仅可以将光纤阵列10与光电子芯片30进行耦合连接，而且可以将光耦合连接器20中的信号光进行放大，解决了光耦合连接器20中信号光损耗过大的问题。
基于图1c所示的系统架构，公开了另一种光耦合连接器，请参阅图6，图6是本申请实施例公开的另一种光耦合连接器的结构示意图。该光耦合连接器20用于连接光纤阵列10和光电子芯片30，该光耦合连接器20包括上层连接器201和下层连接器202，其中：
上层连接器201包括N条上层放大波导(如图6中的211、212…)，N为大于或等于2的正整数；下层连接器202包括N条下层波导(如图6中的221、222…)，N条下层波导与N条上层放大波导一一对应偶耦合，每条下层波导均包括第一耦合波导部分、第二耦合波导部分和间距匹配波导部分；光纤阵列10包括N条光纤(如图6中的101、102…)，N条光纤为N条下层波导提供N路信号光，光电子芯片30包括N条光波导(如图6中的301、302…)；N条下层波导的第一端与N条光纤一一对应连接，N条下层波导的第二端与N条光波导一一对应连接；
每条上层放大波导均包括第一芯层和第一包覆层，第一芯层的材料包括增益材料，增益材料能够将下层波导耦合至对应的上层放大波导的信号光进行放大，第一芯层的折射率大于第一包覆层的折射率；
每条下层波导包括第二芯层和包覆第二芯层的第二包覆层，第二芯层用于传输信号光，第二芯层的折射率大于第二包覆层的折射率。
本申请实施例中，波导是用于传输电磁波的装置，每条波导可以独立的传输一路电磁波信号，波导的形状可以是矩形、圆形等，N条下层波导的芯层材质可以为对电磁波传输损耗较小的材质，例如，对光信号传输损耗较小的二氧化硅(SiO2)，N条上层放大波导的芯层材质可以为半导体材料，可选的，为直接带隙半导体材料，如砷化镓(GaAs)、磷化铟(lnP)等。其中，第二芯层的折射率大于第二包覆层的折射率，可以保证信号光在下层波导的第二芯层中传输时，能够满足全反射条件，将信号光束缚在芯层中，减少信号光在下层波导中的传输损耗。第二芯层的材料可以为硅、二氧化硅、氮化硅、聚合物等。可选的，上层放大波导(如图6中的211)与对应的下层波导(如图6中的22j)之间的包覆层高度尽可能的小，可以减小信号光在包覆层中的损耗，从而提高提高信号光从下层波导耦合至上层放大波导的耦合效率。
下面结合图6阐述信号光的放大原理，当光纤阵列10中的信号光进入下层连接器的某一条下层波导(如图6中的221)的芯层(如图6中的第二芯层)中时，由于上层放大波导211与下层波导221一一对应耦合，下层波导221将接收的信号光通过第一耦合波导部分耦合至上层放大波导211，上层放大波导211的芯层(如图6中的第一芯层)中包括能够将信号光进行放大的增益材料，上层放大波导211将耦合进来的信号光进行放大，然后上层放大波导211将放大后的信号光耦合至下层波导221的第二耦合波导部分，下层波导221将放大后的信号光通过间距匹配波导部分输出至光电子芯片30。图6所示光耦合连接器20可以将光纤阵列10中的多路信号光放大并输出至光电子芯片30中，解决了光耦合连接器20中信号光损耗过大的问题，图6所示的光耦合连接器20结构简单，尺寸小，制作工艺简单，无需泵浦光源，制作成本较低。
在一个实施例中，每条下层波导的第一耦合波导部分的芯层与第二耦合波导部分的芯层断开。如图6a和6c。
在一个实施例中，如图6a(图6a中的每条下层波导的第一耦合波导部分的芯层与第二耦合波导部分的芯层断开)或图6b(图6b中的每条下层波导的第一耦合波导部分的芯层与第二耦合波导部分的芯层连接)所示，下层波导j(如图6a或图6b中的22j)接收光纤阵列发出的一路信号光，下层波导j的第一耦合波导部分将一路信号光耦合至对应的上层放大波导i(如图6a或图6b中的21i)，上层放大波导i将一路信号光进行放大后耦合至下层波导j的第二耦合波导部分，下层波导j的第二耦合波导部分将放大后的一路信号光传输至下层波导j的间距匹配波导部分，下层波导j的间距匹配波导部分将放大后的一路信号光传输至光电子芯片30；上层放大波导i为N条上层放大波导中的任一条，下层波导j为N条下层波导中的任一条。
其中，信号光在第一耦合波导部分已经完全或者绝大部分耦合进入上层放大波导i中。本申请实施例中，信号光首先从下层波导中的第一耦合波导部分耦合进入上层放大波导，上层放大波导将信号光放大后重新耦合进入下层波导的第二耦合波导部分，最后通过间距匹配波导部分后输出至光电子芯片30中。
在一个实施例中，如图6a或图6b所示，N条下层波导中的任意两条相邻下层波导的第一耦合波导部分之间的间距与光纤阵列中任意两条相邻光纤之间的间距相等；N条下层波 导中的任意两条相邻下层波导的间距匹配波导部分之间的最小间距与光电子芯片30中任意两条相邻光波导之间的间距相等。
其中，N条下层波导中的任意两条相邻下层波导的第一耦合波导部分之间的间距与光纤阵列10中任意两条相邻光纤之间的间距相等，可以保证光纤阵列10与光耦合连接器20的下层连接器202的一端(靠近第一耦合波导部分的一端)进行较好的耦合，减少信号光从光纤阵列10传输至下层连接器202时的耦合损耗；N条下层波导中的任意两条相邻下层波导的间距匹配波导部分之间的最小间距与光电子芯片30中任意两条相邻光波导之间的间距相等，可以保证光耦合连接器20的下层连接器202的另一端(靠近间距匹配波导部分的一端，即相邻下层波导的间距匹配波导部分之间的最小间距处)与光电子芯片30进行较好的耦合，减少信号光从下层连接器202传输至光电子芯片30时的耦合损耗。
在一个实施例中，如图6c(图6c中的每条下层波导的第一耦合波导部分的芯层与第二耦合波导部分的芯层断开)或图6d(图6d中的每条下层波导的第一耦合波导部分的芯层与第二耦合波导部分的芯层连接)所示，下层波导j接收光纤阵列发出的一路信号光，下层波导j的间距匹配波导部分将一路信号光传输至下层波导j的第一耦合波导部分，下层波导j的第一耦合波导部分将一路信号光耦合至对应的上层放大波导i，上层放大波导i将一路信号光进行放大后耦合至下层波导j的第二耦合波导部分，下层波导j的第二耦合波导部分将放大后的一路信号光传输至光电子芯片；上层放大波导i为N条上层放大波导中的任一条，下层波导j为N条下层波导中的任一条。
其中，信号光在第一耦合波导部分已经完全或者绝大部分耦合进入上层放大波导i中。本申请实施例中，信号光首先通过下层波导的间距匹配波导部分，输出至第一耦合波导部分，然后从下层波导中耦合进入上层放大波导，上层放大波导将信号光放大后重新耦合进入下层波导，最后输出至光电子芯片30中。
在一个实施例中，N条下层波导中的任意两条相邻下层波导的间距匹配波导部分之间的最大间距与光纤阵列中任意两条相邻光纤之间的间距相等；N条下层波导中的任意两条相邻下层波导的第二耦合波导部分之间的间距与光电子芯片30中任意两条相邻光波导之间的间距相等。
其中，N条下层波导中的任意两条相邻下层波导的间距匹配波导部分之间的最大间距与光纤阵列中任意两条相邻光纤之间的间距相等，可以保证光纤阵列10与光耦合连接器20的下层连接器202的一端(靠近间距匹配波导部分的一端，即相邻间距匹配波导部分之间的最大间距处)进行较好的耦合，减少信号光从光纤阵列10传输至下层连接器202时的耦合损耗；N条下层波导中的任意两条相邻下层波导的第二耦合波导部分之间的间距与光电子芯片30中任意两条相邻光波导之间的间距相等，可以保证光耦合连接器20的下层连接器202的另一端(靠近第二耦合波导部分的一端)与光电子芯片30进行较好的耦合，减少信号光从下层连接器202传输至光电子芯片30时的耦合损耗。
在一个实施例中，如图6a～图6d，N条上层放大波导和N条下层波导均为矩形波导，第一芯层的芯层高度和芯层宽度满足单模传输条件，第二芯层的芯层高度和芯层宽度满足单模传输条件。
其中，第一芯层的芯层高度和芯层宽度满足单模传输条件，第二芯层的芯层高度和芯 层宽度满足单模传输条件，信号光在下层波导和上层放大波导中仅以一个模式进行传输，可以减少信号光在下层波导和上层放大波导中的传输损耗。
在一个实施例中，如图1d所示，第一耦合波导部分的芯层高度保持不变，第一耦合波导部分的芯层宽度沿信号光的传播方向逐渐减小；第二耦合波导部分的芯层高度保持不变，第二耦合波导部分的芯层宽度沿信号光的传播方向逐渐增大。
其中，第一耦合波导部分(图1d中的第一下层耦合区)的芯层高度保持不变，第一耦合波导部分的芯层宽度沿信号光的传播方向逐渐减小，以使信号光逐渐从下层波导耦合进入上层放大波导中，可以提高信号光从下层波导耦合进入上层放大波导的耦合效率；第二耦合波导部分(图1d中的第二下层耦合区)的芯层高度保持不变，第二耦合波导部分的芯层宽度沿信号光的传播方向逐渐增大，可以提高放大后的信号光从上层放大波导耦合进入下层波导的耦合效率。
在一个实施例中，如图6a～图6d，增益材料为半导体材料。
其中，当半导体材料中注入载流子时，半导体材料通过载流子将信号光进行放大。可选的，半导体材料为直接带隙半导体材料，如砷化镓(GaAs)、磷化铟(lnP)等。
下面结合图7对信号光的放大原理进行阐述，如图7所示，在半导体材料中注入载流子(电子或空穴)时，会增加半导体材料中的自由电子浓度，处于低能级的电子数量大大增加，低能级的电子在半导体材料(可选的，为直接带隙半导体)中向高能级进行跃迁，当半导体材料在信号光的激发下，高能级的电子以受激辐射的形式跃迁回低能级，并发射出与信号光波长相同的信号光，从而实现将信号光放大的功能。
基于图1c所示的系统架构，公开了另一种光耦合系统，请参阅图8，图8是本申请实施例公开的另一种光耦合系统的结构示意图。如图8所示，该光耦合系统包括光纤阵列10、光电子芯片30和图1c所示的系统架构中描述的光耦合连接器20，其中：
光纤阵列10包括N条光纤，光电子芯片30包括N条光波导，光耦合连接器20中可以包括上层连接器201和下层连接器202，上层连接器201包括N条上层放大波导，下层连接器202包括N条下层波导，N条下层波导与N条上层放大波导一一对应耦合，光纤阵列10的N条光纤与光耦合连接器20的N条下层波导一一对应连接，光耦合连接器20的N条下层波导与光电子芯片30的N条光波导一一对应连接；
光纤阵列10的N条光纤输出N路信号光至光耦合连接器20的N条下层波导，N条下层波导将N路信号光分别耦合至光耦合连接器20的N条上层放大波导，N条上层放大波导将N路信号光分别放大后耦合至N条下层波导，N条下层波导将放大后的N路信号光分别输出至光电子芯片30的N条光波导。
实施图8所示的光耦合系统，光耦合连接器20可以将光纤阵列10中的多路信号光放大并输出至光电子芯片30中，光耦合连接器20不仅可以将光纤阵列10与光电子芯片30进行耦合连接，而且可以将光耦合连接器20中的信号光进行放大，解决了光耦合连接器20中信号光损耗过大的问题。
基于图1a所示的系统架构，公开了一种波导耦合方法，请参阅图9，图9是本申请实施例公开的一种波导耦合方法的流程示意图，如图9所示，该波导耦合方法包括如下步骤：
901，光耦合连接器接收光纤阵列输出的N路信号光；接收泵浦光源输入的N路泵浦光； N为大于或等于2的正整数；
902，光耦合连接器将N路信号光与N路泵浦光一一对应耦合，形成N路耦合光；
903，针对每路耦合光，光耦合连接器放大每路耦合光中的信号光，衰减每路耦合光中的泵浦光，并将放大后的每路耦合光中的信号光输出至光电子芯片。
本申请实施例中，光耦合连接器用于连接光纤阵列和光电子芯片，光耦合连接器可以包括上层连接器和下层连接器，上层连接器可以接收光纤阵列输出的N路信号光，下层连接器可以接收泵浦光源输入的N路泵浦光；光耦合连接器接收了N路信号光和N路泵浦光之后，将N路信号光与N路泵浦光一一对应耦合，形成N路耦合光；光耦合连接器放大每路耦合光中的信号光，衰减每路耦合光中的泵浦光，并将放大后的每路耦合光中的信号光输出至光电子芯片。实施本申请实施例，光耦合连接器不仅可以将光纤阵列与光电子芯片进行耦合，而且可以将光耦合连接器中的信号光进行放大，解决了光耦合连接器中信号光损耗过大的问题。
在一个实施例中，具体的，光耦合连接器包括N条上层波导，光耦合连接器通过N条上层波导分别接收N路泵浦光。
其中，光耦合连接器的上层连接器可以包括N条上层波导。
在一个实施例中，具体的，光耦合连接器还包括N条下层波导，N条下层波导中的每条下层波导包括耦合波导部分和信号光放大波导部分，光耦合连接器将N路信号光与N路泵浦光一一对应耦合，形成N路耦合光，包括：
光耦合连接器中的N条下层波导中的耦合波导部分将N路信号光与N路泵浦光一一对应耦合，形成N路耦合光。
其中，N条下层波导中的每条下层波导包括耦合波导部分和信号光放大波导部分之外，还包括间距匹配波导部分，间距匹配波导部分用于匹配光线阵列中任意两条相邻光纤之间的间距与光电子芯片中任意两条相邻光波导之间的间距。光耦合连接器中的一条下层波导的耦合波导部分接收光纤阵列输出的一路信号光，并接收对应的一条上层波导耦合进来的一路泵浦光，将一路信号光与一路泵浦光耦合形成一路耦合光。
在一个实施例中，光耦合连接器放大每路耦合光中的信号光，衰减每路耦合光中的泵浦光，并将放大后的每路耦合光中的信号光输出至光电子芯片，包括：
光耦合连接器中的每条下层波导中的信号光放大波导部分放大每路耦合光中的信号光，衰减每路耦合光中的泵浦光，并将放大后的每路耦合光中的信号光输出至光电子芯片。
实施图9所示的波导耦合方法，光耦合连接器可以将光线阵列中的信号光进行放大并输出至光电子芯片，解决了光耦合连接器中信号光损耗过大的问题。
基于图1c所示的系统架构，公开了另一种波导耦合方法，请参阅图10，图10是本申请实施例公开的另一种波导耦合方法的流程示意图，如图10所示，该波导耦合方法包括如下步骤：
1001，下层连接器接收光纤阵列输出的N路信号光；
1002，下层连接器将N路信号光一一对应耦合至上层连接器；
1003，上层连接器将N路信号光分别放大后耦合至下层连接器；
1004，下层连接器将放大后的N路信号光分别输出至光电子芯片的N条光波导。
本申请实施例中，光耦合连接器可以包括上层连接器和下层连接器，其中，下层连接器接收光纤阵列输出的N路信号光，并将N路信号光一一对应耦合至上层连接器；上层连接器接收到N路信号光后，将N路信号光分别放大后耦合至下层连接器；下层连接器将放大后的N路信号光分别输出至光电子芯片的N条光波导。实施本申请实施例，可以将光耦合连接器中的信号光进行放大，解决了光耦合连接器中信号光损耗过大的问题。
在一个实施例中，具体的，下层连接器包括N条下层波导，N条下层波导中的每条下层波导包括第一耦合波导部分和第二耦合波导部分，下层连接器将N路信号光一一对应耦合至上层连接器，包括：
下层连接器中的N条下层波导的第一耦合波导部分将N路信号光一一对应耦合至上层连接器。
其中，N条下层波导中的每条下层波导除了包括第一耦合波导部分和第二耦合波导部分之外，还包括间距匹配波导部分，间距匹配波导部分用于匹配光线阵列中任意两条相邻光纤之间的间距与光电子芯片中任意两条相邻光波导之间的间距。
在一个实施例中，上层连接器将N路信号光分别放大后耦合至下层连接器，包括：
上层连接器将N路信号光分别放大后耦合至下层连接器的N条下层波导的第二耦合波导部分。
在一个实施例中，具体的，上层连接器将N路信号光分别放大后耦合至下层连接器，包括：
向上层连接器内注入载流子，上层连接器利用载流子将N路信号光分别放大，并将放大后的N路信号光分别耦合至下层连接器的N条下层波导的第二耦合波导部分。
其中，载流子可以包括电子或空穴。
实施图10所示的波导耦合方法，光耦合连接器可以将光线阵列中的信号光进行放大并输出至光电子芯片，解决了光耦合连接器中信号光损耗过大的问题。
本申请实施例的方法中的步骤可以根据实际需要进行顺序调整、合并和删减。
以上对本申请实施例公开的一种光耦合连接器、光耦合系统及波导耦合方法进行了详细介绍，本文中应用了具体个例对本申请的原理及实施方式进行了阐述，以上实施例的说明只是用于帮助理解本申请的方法及其核心思想；同时，对于本领域的一般技术人员，依据本申请的思想，在具体实施方式及应用范围上均会有改变之处，综上所述，本说明书内容不应理解为对本申请的限制。

Claims (30)

  1. 一种光耦合连接器，用于连接光纤阵列和光电子芯片，其特征在于，包括上层连接器和下层连接器，其中：
    所述上层连接器包括N条上层波导，所述N为大于或等于2的正整数；所述下层连接器包括N条下层波导，所述N条下层波导与所述N条上层波导一一对应耦合，每条下层波导均包括耦合波导部分、间距匹配波导部分和信号光放大波导部分；泵浦光源与所述N条上层波导连接，所述泵浦光源为所述N条上层波导提供N路泵浦光，所述光纤阵列包括N条光纤，所述N条光纤为所述N条下层波导提供N路信号光，所述光电子芯片包括N条光波导，所述N条下层波导的第一端与所述N条光纤一一对应连接，所述N条下层波导的第二端与所述N条光波导一一对应连接；所述N条上层波导将所述N路泵浦光一一耦合至对应的所述N条下层波导中；
    所述每条下层波导均包括第一芯层和包覆所述第一芯层的第一包覆层，所述第一包覆层的材料包括增益材料，所述增益材料能够将所述泵浦光的能量传递给所述信号光，所述第一芯层的折射率大于所述第一包覆层的折射率。
  2. 根据权利要求1所述的光耦合连接器，其特征在于，上层波导i接收一路泵浦光，下层波导j接收所述光纤阵列发出的一路信号光；所述上层波导i将所述一路泵浦光耦合至对应的所述下层波导j的耦合波导部分，所述下层波导j的耦合波导部分将所述一路泵浦光与所述一路信号光组成的耦合光传输至所述下层波导j的间距匹配波导部分，所述下层波导j的间距匹配波导部分将所述耦合光传输至所述下层波导j的信号光放大波导部分，所述下层波导j的信号光放大波导部分放大所述耦合光中的所述一路信号光并衰减所述耦合光中的所述一路泵浦光，将放大后的所述一路信号光输出至所述光电子芯片；所述上层波导i为所述N条上层波导中的任一条，所述下层波导j为所述N条下层波导中的任一条。
  3. 根据权利要求2所述的光耦合连接器，其特征在于，所述N条下层波导中的任意两条相邻下层波导的第一端之间的间距与所述光纤阵列中任意两条相邻光纤之间的间距相等；所述N条下层波导中的任意两条相邻下层波导的第二端之间的间距与所述光电子芯片中任意两条相邻光波导之间的间距相等。
  4. 根据权利要求3所述的光耦合连接器，其特征在于，所述N条上层波导和所述N条下层波导均为矩形波导。
  5. 根据权利要求4所述的光耦合连接器，其特征在于，所述第一芯层的芯层高度和芯层宽度满足单模传输条件。
  6. 根据权利要求4所述的光耦合连接器，其特征在于，所述一路泵浦光的入射方向与所述上层波导i的横截面之间的夹角为90°；所述一路信号光的入射方向与所述下层波导j的横截面之间的夹角为90°；所述放大后的所述一路信号光的出射方向与所述光电子芯片 中的光波导的横截面之间的夹角为90°。
  7. 根据权利要求4所述的光耦合连接器，其特征在于，所述上层连接器还包括至少一个光分束器，每个光分束器用于连接泵浦光源与M条上层波导，所述每个光分束器将所述泵浦光源发射的原始泵浦光分成M份输入到所述M条上层波导，所述M为小于或等于所述N的正整数。
  8. 根据权利要求4所述的光耦合连接器，其特征在于，每条上层波导包括第二芯层和包覆所述第二芯层的第二包覆层，所述第二芯层用于传输所述泵浦光，所述第二芯层的折射率大于所述第二包覆层的折射率，所述第二芯层的宽度沿泵浦光的传播方向逐渐减小，所述第二芯层的高度保持不变。
  9. 根据权利要求4所述的光耦合连接器，其特征在于，所述信号光放大波导部分的芯层宽度小于或等于所述耦合波导部分的芯层宽度。
  10. 根据权利要求4所述的光耦合连接器，其特征在于，所述信号光放大波导部分的芯层长度大于所述耦合波导部分的芯层长度。
  11. 根据权利要求4～10任一项所述的光耦合连接器，其特征在于，所述增益材料包括镱材料、铒材料或镱材料与铒材料的组合。
  12. 一种光耦合连接器，用于连接光纤阵列和光电子芯片，其特征在于，包括上层连接器和下层连接器，其中：
    所述上层连接器包括N条上层放大波导，所述N为大于或等于2的正整数；所述下层连接器包括N条下层波导，所述N条下层波导与所述N条上层放大波导一一对应耦合，每条下层波导均包括第一耦合波导部分、第二耦合波导部分和间距匹配波导部分；所述光纤阵列包括N条光纤，所述N条光纤为所述N条下层波导提供N路信号光，所述光电子芯片包括N条光波导；所述N条下层波导的第一端与所述N条光纤一一对应连接，所述N条下层波导的第二端与所述N条光波导一一对应连接；
    每条上层放大波导均包括第一芯层和包覆所述第一芯层的第一包覆层，所述第一芯层的材料包括增益材料，所述增益材料能够将下层波导耦合至对应的上层放大波导的信号光进行放大，所述第一芯层的折射率大于所述第一包覆层的折射率；
    所述每条下层波导包括第二芯层和包覆所述第二芯层的第二包覆层，所述第二芯层用于传输所述信号光，所述第二芯层的折射率大于所述第二包覆层的折射率。
  13. 根据权利要求12所述的光耦合连接器，其特征在于，所述每条下层波导的第一耦合波导部分的芯层与第二耦合波导部分的芯层断开。
  14. 根据权利要求13所述的光耦合连接器，其特征在于，下层波导j接收所述光纤阵列发出的一路信号光，所述下层波导j的第一耦合波导部分将所述一路信号光耦合至对应的上层放大波导i，所述上层放大波导i将所述一路信号光进行放大后耦合至所述下层波导j的第二耦合波导部分，所述下层波导j的第二耦合波导部分将放大后的所述一路信号光传输至所述下层波导j的间距匹配波导部分，所述下层波导j的间距匹配波导部分将放大后的所述一路信号光传输至所述光电子芯片；所述上层放大波导i为所述N条上层放大波导中的任一条，所述下层波导j为所述N条下层波导中的任一条。
  15. 根据权利要求13所述的光耦合连接器，其特征在于，下层波导j接收所述光纤阵列发出的一路信号光，所述下层波导j的间距匹配波导部分将所述一路信号光传输至所述下层波导j的第一耦合波导部分，所述下层波导j的第一耦合波导部分将所述一路信号光耦合至对应的上层放大波导i，所述上层放大波导i将所述一路信号光进行放大后耦合至所述下层波导j的第二耦合波导部分，所述下层波导j的第二耦合波导部分将放大后的所述一路信号光传输至所述光电子芯片；所述上层放大波导i为所述N条上层放大波导中的任一条，所述下层波导j为所述N条下层波导中的任一条。
  16. 根据权利要求14所述的光耦合连接器，其特征在于，所述N条下层波导中的任意两条相邻下层波导的第一耦合波导部分之间的间距与所述光纤阵列中任意两条相邻光纤之间的间距相等；所述N条下层波导中的任意两条相邻下层波导的间距匹配波导部分之间的最小间距与所述光电子芯片中任意两条相邻光波导之间的间距相等。
  17. 根据权利要求15所述的光耦合连接器，其特征在于，所述N条下层波导中的任意两条相邻下层波导的间距匹配波导部分之间的最大间距与所述光纤阵列中任意两条相邻光纤之间的间距相等；所述N条下层波导中的任意两条相邻下层波导的第二耦合波导部分之间的间距与所述光电子芯片中任意两条相邻光波导之间的间距相等。
  18. 根据权利要求13所述的光耦合连接器，其特征在于，所述N条上层放大波导和所述N条下层波导均为矩形波导，所述第一芯层的芯层高度和芯层宽度满足单模传输条件，所述第二芯层的芯层高度和芯层宽度满足单模传输条件。
  19. 根据权利要求18所述的光耦合连接器，其特征在于，所述第一耦合波导部分的芯层高度保持不变，所述第一耦合波导部分的芯层宽度沿信号光的传播方向逐渐减小；所述第二耦合波导部分的芯层高度保持不变，所述第二耦合波导部分的芯层宽度沿信号光的传播方向逐渐增大。
  20. 根据权利要求12～19任一项所述的光耦合连接器，其特征在于，所述增益材料为半导体材料。
  21. 根据权利要求20所述的光耦合连接器，其特征在于，当所述半导体材料中注入载流子时，所述半导体材料通过所述载流子将所述信号光进行放大。
  22. 一种光耦合系统，其特征在于，包括光纤阵列、光电子芯片、至少一个激光器和权利要求1～11任一项所述的光耦合连接器，其中：
    所述光纤阵列包括N条光纤，所述光电子芯片包括N条光波导，所述光耦合连接器包括N条上层波导和N条下层波导，所述N条下层波导与所述N条上层波导一一对应耦合，所述光纤阵列的所述N条光纤与所述光耦合连接器的所述N条下层波导一一对应连接，所述光耦合连接器的所述N条下层波导与所述光电子芯片的N条光波导一一对应连接，所述至少一个激光器与所述N条上层波导连接；
    所述至少一个激光器输出N路泵浦光至所述N条上层波导，所述N条光纤输出N路信号光至所述N条下层波导，所述光耦合连接器将所述N路泵浦光分别耦合至所述N条下层波导，所述N条下层波导将所述N路泵浦光分别与所述N路信号光进行耦合放大，并分别输出至所述光电子芯片的所述N条光波导。
  23. 一种波导耦合方法，应用于权利要求1～11任一项所述的光耦合连接器，其特征在于，包括：
    光耦合连接器接收光纤阵列输出的N路信号光；接收泵浦光源输入的N路泵浦光；所述N为大于或等于2的正整数；
    所述光耦合连接器将所述N路信号光与所述N路泵浦光一一对应耦合，形成N路耦合光；
    针对每路耦合光，所述光耦合连接器放大所述每路耦合光中的信号光，衰减所述每路耦合光中的泵浦光，并将放大后的所述每路耦合光中的信号光输出至光电子芯片。
  24. 根据权利要求23所述的方法，其特征在于，所述光耦合连接器包括N条上层波导，所述光耦合连接器通过所述N条上层波导分别接收N路泵浦光。
  25. 根据权利要求24所述的方法，其特征在于，所述光耦合连接器还包括N条下层波导，所述N条下层波导中的每条下层波导包括耦合波导部分和信号光放大波导部分，所述光耦合连接器将所述N路信号光与所述N路泵浦光一一对应耦合，形成N路耦合光，包括：
    所述光耦合连接器中的所述N条下层波导中的耦合波导部分将所述N路信号光与所述N路泵浦光一一对应耦合，形成N路耦合光。
  26. 根据权利要求25所述的方法，其特征在于，所述光耦合连接器放大所述每路耦合光中的信号光，衰减所述每路耦合光中的泵浦光，并将放大后的所述每路耦合光中的信号光输出至光电子芯片，包括：
    所述光耦合连接器中的每条下层波导中的信号光放大波导部分放大所述每路耦合光中的信号光，衰减所述每路耦合光中的泵浦光，并将放大后的所述每路耦合光中的信号光 输出至光电子芯片。
  27. 一种光耦合系统，其特征在于，包括光纤阵列、光电子芯片和权利要求12～21任一项所述的光耦合连接器，其中：
    所述光纤阵列包括N条光纤，所述光电子芯片包括N条光波导，所述光耦合连接器包括N条上层放大波导和N条下层波导，所述N条下层波导与所述N条上层放大波导一一对应耦合，所述光纤阵列的所述N条光纤与所述光耦合连接器的所述N条下层波导一一对应连接，所述光耦合连接器的所述N条下层波导与所述光电子芯片的N条光波导一一对应连接；
    所述光纤阵列的所述N条光纤输出N路信号光至所述光耦合连接器的N条下层波导，所述N条下层波导将所述N路信号光分别耦合至所述光耦合连接器的N条上层放大波导，所述N条上层放大波导将所述N路信号光分别放大后耦合至所述N条下层波导，所述N条下层波导将放大后的所述N路信号光分别输出至所述光电子芯片的所述N条光波导。
  28. 一种波导耦合方法，应用于权利要求12～21任一项所述的光耦合连接器，其特征在于，包括：
    下层连接器接收光纤阵列输出的N路信号光；
    所述下层连接器将所述N路信号光一一对应耦合至上层连接器；所述上层连接器将所述N路信号光分别放大后耦合至所述下层连接器；
    所述下层连接器将放大后的所述N路信号光分别输出至所述光电子芯片的所述N条光波导。
  29. 根据权利要求28所述的方法，其特征在于，所述下层连接器包括N条下层波导，所述N条下层波导中的每条下层波导包括第一耦合波导部分和第二耦合波导部分，所述下层连接器将所述N路信号光一一对应耦合至上层连接器，包括：
    所述下层连接器中的所述N条下层波导的第一耦合波导部分将所述N路信号光一一对应耦合至上层连接器。
  30. 根据权利要求29所述的方法，其特征在于，所述上层连接器将所述N路信号光分别放大后耦合至所述下层连接器，包括：
    向所述上层连接器内注入载流子，所述上层连接器利用所述载流子将所述N路信号光分别放大，并将放大后的所述N路信号光分别耦合至所述下层连接器的N条下层波导的第二耦合波导部分。
PCT/CN2017/071703 2016-03-09 2017-01-19 光耦合连接器、光耦合系统及波导耦合方法 Ceased WO2017152721A1 (zh)

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