WO2017221631A1 - 保持装置 - Google Patents
保持装置 Download PDFInfo
- Publication number
- WO2017221631A1 WO2017221631A1 PCT/JP2017/019685 JP2017019685W WO2017221631A1 WO 2017221631 A1 WO2017221631 A1 WO 2017221631A1 JP 2017019685 W JP2017019685 W JP 2017019685W WO 2017221631 A1 WO2017221631 A1 WO 2017221631A1
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- WO
- WIPO (PCT)
- Prior art keywords
- stage
- cooling
- shaft body
- cooling panel
- rotating shaft
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Ceased
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Classifications
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
- H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
- H10P72/76—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches
- H10P72/7604—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support
- H10P72/7624—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support characterised by the mechanical construction of the susceptor, stage or support
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
- H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32715—Workpiece holder
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
- H10P72/04—Apparatus for manufacture or treatment
- H10P72/0402—Apparatus for fluid treatment
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
- H10P72/04—Apparatus for manufacture or treatment
- H10P72/0431—Apparatus for thermal treatment
- H10P72/0432—Apparatus for thermal treatment mainly by conduction
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
- H10P72/04—Apparatus for manufacture or treatment
- H10P72/0431—Apparatus for thermal treatment
- H10P72/0434—Apparatus for thermal treatment mainly by convection
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
- H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
- H10P72/76—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches
- H10P72/7604—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support
- H10P72/7618—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a movable susceptor, stage or support, others than those only rotating on their own vertical axis, e.g. susceptors on a rotating carrousel
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
- H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
- H10P72/76—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches
- H10P72/7604—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support
- H10P72/7626—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support characterised by the construction of the shaft
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32733—Means for moving the material to be treated
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
- H01J37/3488—Constructional details of particle beam apparatus not otherwise provided for, e.g. arrangement, mounting, housing, environment; special provisions for cleaning or maintenance of the apparatus
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
- H10P72/04—Apparatus for manufacture or treatment
- H10P72/0431—Apparatus for thermal treatment
Definitions
- the present invention relates to a holding device that rotatably holds an object to be processed in a vacuum chamber in a vacuum atmosphere.
- a rotating shaft of a drive motor is connected to a stage on which a processing object is installed, and processing is performed while rotating the stage and thus the processing object at a predetermined speed during processing (for example, Patent Document 2). reference).
- the device described in Patent Document 2 is also provided with an electrostatic chuck electrode and a circulation jacket on the stage so that the workpiece can be rotated and cooled to a predetermined temperature. I am doing so.
- an object of the present invention is to provide a holding device that can rotatably hold an object to be processed in a vacuum chamber while cooling to an extremely low temperature.
- the holding device HS that rotatably holds the substrate W as the object to be processed in the vacuum chamber 1 supports the stage 1 on which the object to be processed is installed, and the stage rotatably.
- the rotational drive means With the stage surface side on which the workpiece is placed facing upward, the rotational drive means has a cylindrical rotating shaft 21 that is inserted through the wall of the vacuum chamber via the first vacuum seal 22, and a space below the stage.
- 24 includes a connecting member 23 that connects the upper end portion of the rotating shaft body and the lower surface of the stage so that 24 is defined, and a drive motor 25 that rotationally drives the rotating shaft body.
- the cooling means is a cooling panel 31 disposed opposite to the lower surface of the stage in a space below the stage, a heat transfer shaft body 32 that is inserted into the rotating shaft body and contacts the lower surface of the cooling panel, And a refrigerator 33 for cooling the heat transfer shaft body.
- the stage connected via the connecting member is rotationally driven, so that the workpiece is rotatably held by the stage. be able to.
- a so-called electrostatic chuck or mechanical clamp is provided on the stage, there is no problem that the workpiece is detached while the stage is rotating.
- the fixed cooling panel is disposed in the space below the stage so as to face the lower surface of the stage, the stage is cooled by radiation from the cooling panel facing the stage. In this case, since the cooling water is not circulated through the heat transfer shaft body or the cooling panel, there is no problem that normal processing is impaired by the leaked cooling water or the processing device itself is damaged.
- the vertical gap between the stage and the cooling panel is appropriately set according to the temperature of the workpiece to be cooled, the presence or absence of heat input to the workpiece during processing, and the like as described later.
- an inert gas is supplied to the space in a vacuum atmosphere (vacuum insulation)
- the degree of vacuum (pressure) in the space and the mean free path of the inert gas are taken into consideration as appropriate. Is set.
- the space below the stage is isolated from the internal space of the rotating shaft body and the space between the second vacuum seal and the stage and the cooling panel can be maintained in a vacuum atmosphere.
- Gas supply means for supplying an active gas the gas supply means having a gas passage provided in communication with the heat transfer shaft body and the cooling panel, and a gas supply port of the gas passage is provided in the stage. It is preferable to be established on the opposing surface of the opposing cooling panel. According to this, in addition to cooling by the radiation of the cooling panel, the stage is further cooled by heat exchange caused by collision of the inert gas supplied to the gap with the stage, which is advantageous.
- a third vacuum seal is provided between the rotating shaft body and the refrigerator in order to make the internal space of the rotating shaft body through which the heat transfer shaft body is inserted into a vacuum atmosphere (that is, vacuum insulation). Is preferred.
- the gas supply port is located in the central region on the lower surface of the stage.
- the cooled inert gas tends to immediately flow downward.
- the inert gas may not collide with the lower surface of the stage as it goes toward the outer edge of the stage. Therefore, in the present invention, the lower surface of the stage has a first uneven shape that repeats unevenness in the vertical direction, and the upper surface of the cooling panel covers the entire gap corresponding to the first uneven shape. It is preferable to have a second concavo-convex shape that is equivalent to each other.
- the inert gas when an inert gas is supplied from the gas supply port in the central area of the lower surface of the stage, the inert gas flows toward the outer edge of the stage. By getting over, the inert gas can be made to collide reliably to the outer edge of the stage.
- the cooling panel and a refrigerator are connected via a heat transfer shaft body of a predetermined length and the cooling panel is to be cooled by heat transfer, depending on the material and length of the heat transfer shaft body,
- the gap is excessively widened due to thermal contraction of the heat transfer shaft body, and the stage cannot be efficiently cooled by radiation from the cooling panel.
- the said clearance gap can be adjusted optimally according to the thermal contraction of a heat-transfer shaft body, for example, and it is advantageous.
- the cooling panel can be brought into contact with the lower surface of the stage to effectively cool the stage.
- a heat insulating material is interposed between the first vacuum seal and the connecting member. According to this, when a magnetic fluid seal that also serves as a bearing for the rotary shaft body is used as the first vacuum seal, it is possible to prevent a problem that the magnetic fluid seal is cooled and damaged.
- (A)-(d) is sectional drawing corresponding to FIG. 1 explaining the adjustment method of the clearance gap between a stage and a cooling panel.
- a workpiece is a silicon wafer (hereinafter referred to as “substrate W”), and the substrate W is rotatably held while being cooled in a vacuum chamber.
- substrate W silicon wafer
- the holding device is provided on the bottom surface side of the vacuum chamber in the posture shown in FIG. 1, and terms indicating directions such as up and down will be described with reference to FIG. 1.
- Vc is a vacuum chamber provided with the holding device HS of the present embodiment.
- the vacuum chamber Vc is connected to a vacuum pump through an exhaust pipe so that it can be evacuated and held at a predetermined pressure (degree of vacuum).
- a processing unit (not shown) for performing a predetermined process such as a sputtering cathode is provided, and the predetermined process is performed on the substrate W in the vacuum chamber Vc in a vacuum atmosphere.
- a holding device HS is provided to hold the substrate W rotatably in the vacuum chamber Vc during processing.
- the holding device HS includes a stage 1 on which the substrate W is set, a rotation driving unit 2 that rotatably supports the stage 1, and a cooling unit 3 that cools the stage 1.
- the stage 1 has a contour corresponding to the substrate W, a base 11 made of a material having good thermal conductivity (for example, aluminum), and a dielectric provided on the upper surface of the base 11 via an indium sheet (not shown).
- the chuck plate 12 and the electrostatic chuck electrode 13 are assembled.
- the substrate W can be electrostatically attracted to the upper surface of the stage 1 by supplying power from a chuck power source (not shown).
- the rotation driving means 2 includes a cylindrical rotating shaft 21.
- the rotating shaft body 21 is composed of a fixed inner tube portion 21a and an outer tube portion 21b that is externally inserted into the inner tube portion 21a, and the outer tube portion 21b can be rotated by a drive motor described later. It is supported by a magnetic fluid seal 22 as a first vacuum seal provided at the bottom wall opening of the vacuum chamber Vc.
- a cylindrical heat insulating material 21 c is provided at the upper end of the outer tube portion 21 b, and a dish-shaped connecting member 23 is provided between the heat insulating material 21 c and the outer peripheral edge of the lower surface of the base 11.
- a predetermined space 24 is defined below the stage 1 by the back surface of the base 11 and the connecting member 23.
- the heat insulating material 21c a resin material such as polyimide or FRP (Fiber-Reinforced Plastics) or a ceramic material can be used.
- a so-called hollow servomotor 25 as a drive motor is extrapolated to a portion of the rotary shaft body 21 located outside the vacuum chamber Vc. The stage 1 connected through the motor 23 is rotated at a predetermined rotational speed.
- the kind of drive motor and the rotational drive method of the rotating shaft body 21 are not limited to this, The other well-known thing using a DC motor, a gear, etc. can be utilized.
- the cooling means 3 includes a cooling panel 31 that is fixedly disposed in the space 24 so as to face the lower surface of the base 11 and leave a gap D.
- the cooling panel 31 is formed from the outer tube portion 21 b of the rotating shaft body 21. It is inserted into the inner pipe portion 21 a extending downward and supported by a heat transfer shaft body 32 that is vertically long and contacts the lower surface of the cooling panel 31.
- the cooling panel 31 and the heat transfer shaft body 32 are made of a material having good thermal conductivity, for example, a metal selected from copper and aluminum, or an alloy containing these metals as a main component.
- a plate-shaped member having an area corresponding to the temperature at which the substrate W is to be cooled and a solid round bar-shaped member are used as the heat transfer shaft body 32.
- the surface of the cooling panel 31 facing the base 11 may be blackened, and the back surface of the cooling panel 31 with respect to the base 11 and the heat transfer shaft body 32 may be mirror-finished.
- the lower surface of the base 11 is processed into a first uneven shape 11 a that repeats unevenness in the vertical direction, and the upper surface of the cooling panel 31 corresponds to the first uneven shape 11 a.
- the lower part of the heat transfer shaft body 32 is connected to a refrigerator 33 that cools the heat transfer shaft body 32.
- the refrigerator 33 is not particularly illustrated and described, but includes a compressor, a condenser, and an expansion valve, and a refrigerant is supplied to and circulated from the heat exchanger (not shown) to the refrigerator 33 to be cooled. .
- the refrigerator 33 itself can utilize a well-known thing, detailed description beyond this is abbreviate
- the cooling panel 31 can be cooled to a predetermined temperature (for example, ⁇ 200 ° C.) by the refrigerator 33 via the heat transfer shaft body 32.
- a bellows 4 as a second vacuum seal that separates the space 24 and the internal space 21 d of the rotary shaft 21 is provided at the upper end of the heat transfer shaft 32 existing in the vacuum chamber 1.
- the bellows 4 is held by the outer cylinder part 41 suspended from the lower surface of the connecting member 23 and the inner cylinder part 42 extrapolated to the heat transfer shaft body 32 via the shaft seal 5a and the bearing 5b.
- the bellows 4 also rotates relative to the heat transfer shaft body 32 together with the inner cylinder portion 42 and the outer cylinder portion 41. Yes.
- a disk-shaped partition plate 6 extending radially outward is airtightly held by an O-ring 61 in the casing portion of the refrigerator 33 positioned below the lower end of the inner tube portion 21a of the rotating shaft body 21.
- the other bellows (third vacuum seal) 7 is provided between the upper surface of the partition plate 6 and the lower end surface of the inner tube portion 21a of the rotary shaft body 21, and the internal space 21d of the rotary shaft body 21 is airtight. It is supposed to be retained.
- the partition plate 6 is provided with an exhaust port 62 so that the internal space 21d can be evacuated to a predetermined pressure (degree of vacuum) by a vacuum pump (not shown).
- the lower end portion of the heat transfer shaft 32 is provided with connection ports 82a and 82b between the gas supply pipe 81a and the gas exhaust pipe 81b extending through the partition plate 6, and the connection ports 82a and 82b are connected to the heat transfer shaft.
- the body 32 and the cooling panel 31 communicate with gas passages 83a and 83b provided in communication with each other. Both gas passages 83a and 83b communicate with a gas supply port 84a and a gas exhaust port 84b respectively opened on the facing surface of the cooling panel 31 facing the base 11.
- the gas supply pipe 81a is connected to a gas source via a mass flow controller (not shown) so that an inert gas adjusted to a predetermined flow rate can be supplied to the space 24.
- the inert gas a rare gas such as helium gas or argon gas or nitrogen gas is used.
- the gas exhaust pipe 81b is connected to a vacuum pump (not shown), and the space 24 is evacuated to a predetermined pressure to insulate the space 24 before introducing the inert gas, or the space 24 in a vacuum atmosphere is vacuum-insulated.
- the inert gas can be circulated by introducing a vacuum while introducing the inert gas.
- an opening / closing valve (not shown) is provided in the gas exhaust pipe 81b, and after the space 24 is evacuated to a predetermined pressure, the opening / closing valve is closed, and in this state, the inert gas is supplied from the gas supply pipe 81a to the space 24. Can be introduced and sealed.
- an inert gas may be introduced from the gas exhaust pipe 81b in addition to the gas supply pipe 81a.
- the gap D in the vertical direction between the base 11 and the cooling panel 31 is the temperature at which the substrate W is to be cooled, during processing.
- the pressure (degree of vacuum) in the space 24 the mean free path of inert gas (atoms and molecules), etc. are set as appropriate. That is, the heat transfer coefficient of the space 24 is determined by the type of the inert gas and the pressure in the space 24, and the interval D is determined accordingly.
- the driving unit 9 that moves the cooling unit 3 up and down integrally with the rotating shaft 21 is provided.
- Three driving means 9 are provided at intervals of 120 degrees in the circumferential direction on the outer peripheral side of the partition plate 6.
- Each drive means 9 has the same configuration, and includes a drive motor 92 provided on a frame 91 suspended from the bottom wall of the vacuum chamber Vc, and a feed screw 93 attached to the rotation shaft of the drive motor 92. 93 is screwed to a slider 63 provided on the partition plate 6.
- a method for adjusting the distance D using the driving unit 9 will be described in detail with reference to FIG.
- the drive motor 92 of each drive means 9 is rotated in one direction, respectively, and the cooling means 3 is moved down to a predetermined position where the cooling panel 31 is separated from the base 11 (see FIG. 3A).
- the bellows 7 absorbs the relative movement amount of the cooling means 3 with respect to the rotating shaft body 21, and the internal space 21d of the rotating shaft body 21 is maintained in an airtight state.
- only the driving motor 92 of any one of the driving means 9 (left side in the figure) is rotated in the other direction, so that the upper surface of the cooling panel 31 comes into contact with the lower surface of the base 11.
- the stage 1 connected via the connecting member 23 is rotationally driven.
- the substrate W can be held rotatably. Since the cooling panel 31 is fixedly disposed in the space 24 below the base 11 so as to face the lower surface of the base 11, the stage 1 is cooled by radiation from the cooling panel 31 facing this. At this time, the cooling panel 31 is cooled by heat transfer from the heat transfer shaft 32 inserted in the rotary shaft 21 and cooled by the refrigerator 33, and the inert gas supplied to the gap D is moved to the stage 1.
- the substrate W is cooled to an extremely low temperature (for example, ⁇ 200 ° C.) lower than the cooling temperature ( ⁇ 30 ° C.) in the conventional example. Is possible.
- the inert gas is cooled while passing through the heat transfer shaft 32 and the cooling panel 31 in the cryogenic state, the cooling efficiency of the stage 1 due to the collision of the inert gas can be further increased. In this case, since the cooling water is not circulated through the heat transfer shaft body 32 or the cooling panel 31, there is no problem that normal processing is impaired by the leaked cooling water or the processing apparatus itself is damaged.
- the lower surface of the base 11 has a first uneven shape 11a that repeats unevenness in the vertical direction, and the upper surface of the cooling panel 31 extends across the gap D corresponding to the first uneven shape 11a. Therefore, when the inert gas is supplied from the gas supply port 84a of the cooling panel 31, the inert gas flows in the radial outer edge direction of the base 11, At this time, the inert gas can be made to collide reliably to the outer edge of the base 11 by overcoming the level
- the gap D can be adjusted optimally according to the thermal contraction of the heat transfer shaft body 32, which is advantageous.
- the cooling panel 31 can be brought into contact with the lower surface of the base 11 to effectively cool the stage 1.
- the heat insulating material 21c is interposed between the magnetic fluid seal 22 and the connecting member 23, it is possible to prevent a problem that the magnetic fluid seal 22 is cooled and damaged.
- the stage 1 having an electrostatic chuck function has been described as an example.
- the stage configuration is not limited to the above, and other known ones can be used.
- a stage can be configured by providing a so-called mechanical chuck on the base 11.
- the cooling panel 31 and the heat transfer shaft body 32 are provided with the gas passage 83b and the gas exhaust port 84b for evacuating the space 24 as an example.
- the present invention is not limited to this.
- a through hole of the connecting member 23 is formed, and the space 24 is evacuated through the through hole as the vacuum chamber Vc is exhausted, or the inert gas supplied to the space 24 is exhausted. You may make it do.
- HS ... holding device W ... substrate (object to be processed), Vc ... vacuum chamber, 1 ... stage, 11 ... base (component of stage), 11a ... first uneven shape, 2 ... rotational drive means, 21 ... Rotating shaft, 21a ... inner tube, 21b ... outer tube, 21c ... heat insulating material, 21d ... inner space of rotating shaft, 22 ... magnetic fluid seal (first vacuum seal), 23 ... connecting member, 24 ... Space, 25 ... Hollow servo motor (drive motor), 3 ... Cooling means, 31 ... Cooling panel, 31a ... Second uneven shape, 32 ... Heat transfer shaft, 33 ... Refrigerator, 4 ... Bellows (second vacuum) Seal), 7 ... bellows (third vacuum seal), 83a ... gas passage (component of gas supply means), 84a ... gas supply port (component of gas supply means), 9 ... drive means, D ... gap.
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- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Plasma & Fusion (AREA)
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
- Drying Of Semiconductors (AREA)
Abstract
Description
Claims (5)
- 真空チャンバ内で被処理物を冷却しながら回転自在に保持する保持装置であって、
被処理物が設置されるステージと、ステージを回転自在に支持する回転駆動手段と、ステージを冷却する冷却手段とを備え、
被処理物が設置されるステージ面側を上として、回転駆動手段が、真空チャンバの壁面に第1の真空シールを介して貫装される筒状の回転軸体と、ステージ下方に空間が画成されるように回転軸体の上端部とステージの下面とを連結する連結部材と、回転軸体を回転駆動する駆動モータとを有し、
冷却手段が、ステージ下方の空間に当該ステージの下面に隙間を存して対向配置される冷却パネルと、回転軸体に内挿されて冷却パネルの下面に当接する伝熱軸体と、伝熱軸体を冷却する冷凍機とを有することを特徴とする保持装置。 - 前記ステージ下方の空間を前記回転軸体の内部空間から隔絶して当該空間を真空雰囲気に維持可能な第2の真空シールと、前記ステージと前記冷却パネルとの間の隙間に不活性ガスを供給するガス供給手段とを更に備え、
ガス供給手段が前記伝熱軸体と前記冷却パネルとに互いに連通させて設けたガス通路を有し、ガス通路のガス供給口が前記ステージに対向する冷却パネルの対向面に開設されることを特徴とする請求項1記載の保持装置。 - 前記ステージの下面が、上下方向に凹凸を繰り返す第1の凹凸形状を有し、前記冷却パネルの上面が、第1の凹凸形状に対応して前記隙間をその全面に亘って同等にする第2の凹凸形状を有することを特徴とする請求項1または請求項2記載の保持装置。
- 前記回転軸体に対して前記伝熱軸体と前記冷却パネルとを一体に上下動する駆動手段を更に備えることを特徴とする請求項1~請求項3のいずれか1項に記載の保持装置。
- 前記第1の真空シールと前記連結部材との間に断熱材が介在されることを特徴とする請求項1~請求項4のいずれか1項に記載の保持装置。
Priority Applications (5)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2018523623A JP6559347B2 (ja) | 2016-06-23 | 2017-05-26 | 保持装置 |
| US16/068,504 US10763153B2 (en) | 2016-06-23 | 2017-05-26 | Holding apparatus |
| CN201780035954.8A CN109314078B (zh) | 2016-06-23 | 2017-05-26 | 保持装置 |
| KR1020187033685A KR102163938B1 (ko) | 2016-06-23 | 2017-05-26 | 유지 장치 |
| EP17815100.7A EP3477691B1 (en) | 2016-06-23 | 2017-05-26 | Holding device |
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2016-124984 | 2016-06-23 | ||
| JP2016124984 | 2016-06-23 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| WO2017221631A1 true WO2017221631A1 (ja) | 2017-12-28 |
Family
ID=60784443
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| PCT/JP2017/019685 Ceased WO2017221631A1 (ja) | 2016-06-23 | 2017-05-26 | 保持装置 |
Country Status (7)
| Country | Link |
|---|---|
| US (1) | US10763153B2 (ja) |
| EP (1) | EP3477691B1 (ja) |
| JP (1) | JP6559347B2 (ja) |
| KR (1) | KR102163938B1 (ja) |
| CN (1) | CN109314078B (ja) |
| TW (1) | TWI664694B (ja) |
| WO (1) | WO2017221631A1 (ja) |
Cited By (19)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
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| CN113745135B (zh) * | 2021-11-04 | 2022-03-22 | 北京北方华创微电子装备有限公司 | 工艺腔室 |
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Also Published As
| Publication number | Publication date |
|---|---|
| EP3477691A4 (en) | 2020-01-22 |
| TWI664694B (zh) | 2019-07-01 |
| TW201810518A (zh) | 2018-03-16 |
| EP3477691A1 (en) | 2019-05-01 |
| CN109314078A (zh) | 2019-02-05 |
| CN109314078B (zh) | 2023-02-24 |
| JPWO2017221631A1 (ja) | 2018-11-08 |
| KR20180135040A (ko) | 2018-12-19 |
| KR102163938B1 (ko) | 2020-10-12 |
| EP3477691B1 (en) | 2022-03-09 |
| US10763153B2 (en) | 2020-09-01 |
| JP6559347B2 (ja) | 2019-08-14 |
| US20190103301A1 (en) | 2019-04-04 |
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