WO2018006487A1 - 一种接触器线圈控制电路 - Google Patents

一种接触器线圈控制电路 Download PDF

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Publication number
WO2018006487A1
WO2018006487A1 PCT/CN2016/097519 CN2016097519W WO2018006487A1 WO 2018006487 A1 WO2018006487 A1 WO 2018006487A1 CN 2016097519 W CN2016097519 W CN 2016097519W WO 2018006487 A1 WO2018006487 A1 WO 2018006487A1
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Prior art keywords
mos transistor
circuit
control circuit
diode
capacitor
Prior art date
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Ceased
Application number
PCT/CN2016/097519
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English (en)
French (fr)
Inventor
尹向阳
唐盛斌
苏俊熙
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Mornsun Guangzhou Science and Technology Ltd
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Mornsun Guangzhou Science and Technology Ltd
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Priority to JP2018546858A priority Critical patent/JP6714094B2/ja
Priority to US16/073,804 priority patent/US10910182B2/en
Priority to EP16907991.0A priority patent/EP3401941B1/en
Publication of WO2018006487A1 publication Critical patent/WO2018006487A1/zh
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01H—ELECTRIC SWITCHES; RELAYS; SELECTORS; EMERGENCY PROTECTIVE DEVICES
    • H01H47/00—Circuit arrangements not adapted to a particular application of the relay and designed to obtain desired operating characteristics or to provide energising current
    • H01H47/002—Monitoring or fail-safe circuits
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01H—ELECTRIC SWITCHES; RELAYS; SELECTORS; EMERGENCY PROTECTIVE DEVICES
    • H01H47/00—Circuit arrangements not adapted to a particular application of the relay and designed to obtain desired operating characteristics or to provide energising current
    • H01H47/22—Circuit arrangements not adapted to a particular application of the relay and designed to obtain desired operating characteristics or to provide energising current for supplying energising current for relay coil
    • H01H47/32—Energising current supplied by semiconductor device
    • H01H47/325—Energising current supplied by semiconductor device by switching regulator
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01H—ELECTRIC SWITCHES; RELAYS; SELECTORS; EMERGENCY PROTECTIVE DEVICES
    • H01H47/00—Circuit arrangements not adapted to a particular application of the relay and designed to obtain desired operating characteristics or to provide energising current
    • H01H47/02—Circuit arrangements not adapted to a particular application of the relay and designed to obtain desired operating characteristics or to provide energising current for modifying the operation of the relay
    • H01H47/04—Circuit arrangements not adapted to a particular application of the relay and designed to obtain desired operating characteristics or to provide energising current for modifying the operation of the relay for holding armature in attracted position, e.g. when initial energising circuit is interrupted; for maintaining armature in attracted position, e.g. with reduced energising current
    • H01H47/10—Circuit arrangements not adapted to a particular application of the relay and designed to obtain desired operating characteristics or to provide energising current for modifying the operation of the relay for holding armature in attracted position, e.g. when initial energising circuit is interrupted; for maintaining armature in attracted position, e.g. with reduced energising current by switching-in or -out impedance external to the relay winding
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F7/00—Magnets
    • H01F7/06—Electromagnets; Actuators including electromagnets
    • H01F7/08—Electromagnets; Actuators including electromagnets with armatures
    • H01F7/18—Circuit arrangements for obtaining desired operating characteristics, e.g. for slow operation, for sequential energisation of windings, for high-speed energisation of windings
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01H—ELECTRIC SWITCHES; RELAYS; SELECTORS; EMERGENCY PROTECTIVE DEVICES
    • H01H47/00—Circuit arrangements not adapted to a particular application of the relay and designed to obtain desired operating characteristics or to provide energising current
    • H01H47/001—Functional circuits, e.g. logic, sequencing, interlocking circuits
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01H—ELECTRIC SWITCHES; RELAYS; SELECTORS; EMERGENCY PROTECTIVE DEVICES
    • H01H47/00—Circuit arrangements not adapted to a particular application of the relay and designed to obtain desired operating characteristics or to provide energising current
    • H01H47/22—Circuit arrangements not adapted to a particular application of the relay and designed to obtain desired operating characteristics or to provide energising current for supplying energising current for relay coil
    • H01H47/223—Circuit arrangements not adapted to a particular application of the relay and designed to obtain desired operating characteristics or to provide energising current for supplying energising current for relay coil adapted to be supplied by AC
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01H—ELECTRIC SWITCHES; RELAYS; SELECTORS; EMERGENCY PROTECTIVE DEVICES
    • H01H47/00—Circuit arrangements not adapted to a particular application of the relay and designed to obtain desired operating characteristics or to provide energising current
    • H01H47/22—Circuit arrangements not adapted to a particular application of the relay and designed to obtain desired operating characteristics or to provide energising current for supplying energising current for relay coil
    • H01H47/32—Energising current supplied by semiconductor device
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02H—EMERGENCY PROTECTIVE CIRCUIT ARRANGEMENTS
    • H02H9/00—Emergency protective circuit arrangements for limiting excess current or voltage without disconnection
    • H02H9/04—Emergency protective circuit arrangements for limiting excess current or voltage without disconnection responsive to excess voltage
    • H02H9/045—Emergency protective circuit arrangements for limiting excess current or voltage without disconnection responsive to excess voltage adapted to a particular application and not provided for elsewhere
    • H02H9/047—Free-wheeling circuits

Definitions

  • the invention relates to the field of AC contactors, and in particular to a control circuit for a contactor coil.
  • the electromagnetic control system of the traditional contactor consists of a coil and an iron core.
  • the number of turns of the coil is several hundred or even thousands of turns.
  • the contactor coil is actually an inductance with a large inductance and internal resistance, and the inductance of the contactor coil is usually It is a few hundred millihengs to several hens, and the internal resistance is several tens of ohms to several hundred ohms.
  • the entire working process of the contactor coil can be divided into three phases: the suction phase, the suction phase and the shutdown phase.
  • the contactor coil passes a large pull-in current, and the coil generates a large electromagnetic force to close the contactor contacts, which is typically within 200 ms.
  • the contactor contacts When the contactor contacts are attracted, it enters the holding phase. At this stage, the holding current of the coil is about one tenth of the pulling current. Excessive holding current will increase the loss of the coil.
  • the phase in which the contactor contacts are open is called the shutdown phase, and the current of the coil is dissipated by the contactor contacts.
  • the contactor coil requires a large current when it is pulled in, and requires only a small current when it is held.
  • Conventional contactors have no other control elements and can only be limited by the impedance of the coil itself. In order to balance the large current required for the pull-in, the impedance of the coil cannot be designed too large.
  • the circuit of Fig. 1 is a common power saving circuit, and the current of the contactor coil 1 can be adjusted by adjusting the duty ratio of the MOS transistor T1.
  • the duty ratio of T1 In the suction phase, the duty ratio of T1 is larger, and the duty ratio of T1 is smaller in the suction phase, so that the contactor coil can achieve large current sinking and small current holding, thereby achieving energy saving effect.
  • diode D1 provides a freewheeling loop of the coil, the loop voltage drop is about 0.7V, and the low-impedance freewheeling loop during normal operation helps to reduce the loss of the entire circuit.
  • the shutdown phase it is necessary to quickly consume the current of the coil so that the contactor can be quickly turned off.
  • the low-impedance freewheeling circuit is not conducive to the fast turn-off of the contactor.
  • the low-impedance freewheeling circuit will keep the coil current for a long time, and the contactor will delay the shutdown. In conventional contactor products, the off time is usually around 50ms. With the addition of a power-saving circuit contactor product, due to the presence of the coil low-impedance freewheeling circuit, the turn-off time will rise to about 200ms. In general applications, a slight increase in turn-off time does not have much effect. But in some cases, an increase in turn-off time can cause fatal problems. If the control motor is reversing The contactor, the reversing contactor must be alternately engaged and released, and there should be no overlap in time. When the contactor turn-off delay is large, it will appear that one contactor has not been completely disconnected, and the other is attracted, which will cause a short circuit of the power supply and cause danger.
  • the impedance of the coil freewheeling circuit In order to achieve a fast turn-off function, the impedance of the coil freewheeling circuit must be increased when the contactor is turned off.
  • the usual practice is to switch the impedance of the freewheeling circuit with a switch.
  • the switching devices for switching the impedance of the freewheeling circuit are collectively referred to as fast turn-off tubes.
  • the contactor power-saving circuit with fast turn-off function has certain problems. As disclosed in the CN1925085A patent, the schematic diagram of the circuit that is quickly turned off is shown in Figure 2.
  • a contactor power-saving circuit with a fast-shutdown function in the attracting and holding phase, the fast-breaking tube operates in the amplification region, assuming that the voltage of the gate is Vgs , then the voltage Vds between the drain and the source is equal to (V gth + (Ids / k )) * (R 1 + R 2) / R 2, wherein Vgth is the turn-on voltage threshold of the MOS transistor, the transconductance coefficient proportional to k with a MOS transistor, Ids of the is drain-source between In the fast turn-off phase, the fast turn-off tube is disconnected, and the coil current is quickly consumed by R1 and Z1 to achieve a fast turn-off effect.
  • the disadvantage of this circuit is that during the pull-in and hold phase, the fast turn-off tube works in the amplification region.
  • the gate opening threshold V gth is generally above 3.5V, so the voltage V ds between the drain and the source is also relatively large. Above 3.5V, the rapid shutdown of the tube during the freewheeling of the contactor coil will consume more energy and increase the loss of the power-saving circuit during the suction phase and the suction phase.
  • the present invention provides a coil control circuit for a contactor comprising a switch control circuit, a drive circuit, a fast turn-off circuit, a diode, a first MOS transistor, and a contactor coil.
  • the fast shutdown circuit includes at least one MOS transistor or triode.
  • the circuit connection relationship of the present invention is: the cathode of the diode and The input voltage is connected, the anode of the diode is connected to the first port of the fast turn-off circuit, the second port of the fast turn-off circuit is connected to the drain of the first MOS transistor, the source of the first MOS transistor is grounded, and the contactor One end of the coil is connected to the input voltage, the other end of the contactor is connected to the drain of the first MOS transistor, and the third port of the fast turn-off circuit is connected to the output port of the driving circuit, and the input port of the driving circuit and the switch control circuit An output port is connected, and the second output port of the switch control circuit is connected to the gate of the first MOS transistor.
  • a coil control circuit for a contactor is adapted to control a coil of the contactor, including a freewheeling diode D1 and a MOS transistor TR1, and further includes a fast turn-off circuit, a drive circuit, and a switch control circuit, and a fast turn-off circuit.
  • the drive circuit is a fast turn-off circuit
  • a driving voltage is provided;
  • a switch control circuit controls the operation of the MOS transistor TR1.
  • the driving circuit drives the fast turn-off circuit to operate in a saturated conduction state during the phase of picking and holding of the coil.
  • the fast turn-off circuit is a MOS transistor that satisfies the saturation conduction parameter characteristic of Vgs >( Vgth + Ids /k) during the phase of attraction and absorption of the coil.
  • the fast turn-off circuit includes a MOS transistor TR2; the driving circuit includes a capacitor C1; the switch control circuit includes a MOS transistor TR3, a MOS transistor TR4, and a current supply terminal; and a capacitor C1 is connected in parallel to the MOS transistor TR2.
  • the current at the current supply terminal charges the capacitor C1 through the body diode of the MOS transistor TR4, the body diode of the MOS transistor TR2, and the path formed by the MOS transistor TR1; when the MOS transistor TR2 is turned on, the capacitor C1
  • the gate of the MOS transistor TR2 is continuously supplied with power to make the MOS transistor TR2 saturate.
  • the capacitor C1 of the driving circuit discharges energy through a loop formed by the MOS transistor TR4, the MOS transistor TR3, the body diode of the MOS transistor TR1, and the MOS transistor TR2 in the off phase.
  • the fast turn-off circuit includes a transistor Q1; the driving circuit includes a resistor R1; the switch control circuit includes a MOS transistor TR3, and the MOS transistor TR3 is turned on during the pickup phase and the holding phase to form a resistor.
  • the path of R1 and ground establishes the base current of transistor Q1 by resistor R1 to make the transistor Q1 saturate.
  • the switch control circuit controls the MOS transistor TR3 to be turned off during the off phase to operate the transistor Q1 in an amplified state or a fully turned-off state.
  • the coil control method of the coil control circuit of the contactor of the present invention is:
  • the second output port of the switch control circuit continuously outputs a square wave signal to control the first MOS transistor to be turned on and off; in the turn-off phase, the second input port of the switch control circuit does not output a square wave signal control A MOS tube is continuously disconnected.
  • the fast turn-off circuit can be a MOS transistor or a triode.
  • the control circuit is characterized in that, in the pick-up and hold phase, the drive circuit controls the second MOS transistor to be turned on at the moment when the first MOS transistor is turned off.
  • the parameter characteristic of the second MOS tube is V gs >(V gth +I ds /k), wherein V gth is the threshold voltage of the opening of the MOS tube, k is a coefficient proportional to the transconductance of the MOS tube, and V gs is the first The voltage of the gate of the MOS transistor, I ds is the current between the drain source of the second MOS transistor.
  • the driving circuit can set V gs above 10V. Under the driving voltage, the MOS transistor can be completely turned on, the conduction internal resistance R dson of the second MOS transistor is small, and the power consumed by the second MOS transistor is I ds 2 * R dson , the loss is very small.
  • the control circuit When the fast turn-off tube is an NPN triode (represented by the NPN triode), the control circuit is characterized in that during the pick-up and hold phase, the drive circuit controls the NPN transistor at the moment the first MOS transistor is turned off.
  • the parameter characteristic of the NPN transistor is I b >I ce / ⁇ , where I b is the base current of the NPN transistor, ⁇ is the amplification factor of the triode, and I ce is between the collector and the emitter of the NPN transistor Current.
  • I b >I ce / ⁇ the NPN transistor is saturated, and the voltage drop between the electrode and the emitter is 0.3V.
  • the voltage drop between the electrode and the emitter is large, and the power consumed by the NPN transistor is V ce *I ce, which can quickly consume the energy of the contactor coil, so that the contactor can be quickly turned off.
  • the beneficial effect obtained by the present invention is that almost no additional loss is added while achieving a fast turn-off effect.
  • the most important technical point of the present invention is to propose a floating driving method, which allows the floating MOS tube to be saturated and turned on, and the circuit is simple. Compared with the existing solutions, there is no defect.
  • FIG. 1 is a circuit schematic diagram of a prior art power saver circuit without a fast turn-off function
  • FIG. 2 is a circuit schematic diagram of a prior art power saver circuit with a fast turn-off function
  • Figure 3-1 is a schematic circuit diagram of a prior art using a triode as a fast turn-off tube
  • 3-2 is a schematic circuit diagram of a prior art using a MOS tube as a fast turn-off tube
  • FIG. 4 is a circuit block diagram of the present invention.
  • Figure 5 is a schematic circuit diagram of a first embodiment of the present invention.
  • Figure 6 is a schematic circuit diagram of a second embodiment of the present invention.
  • Figure 7 is a schematic circuit diagram of a third embodiment of the present invention.
  • Figure 8 is a circuit diagram of a fourth embodiment of the present invention.
  • Figure 9 is a circuit diagram of a fifth embodiment of the present invention.
  • Figure 10 is a logic timing diagram of a fifth embodiment of the present invention.
  • Figure 11 is a circuit diagram of a sixth embodiment of the present invention.
  • Figure 12 is a circuit diagram of a seventh embodiment of the present invention.
  • FIG. 2 A schematic diagram of the circuit principle of the prior art is shown in FIG. 2.
  • the pull-in and hold phase when the MOS transistor TR1 is turned off, the fast turn-off transistor TR2 needs to be turned on to a freewheeling loop of the contactor coil, and the energy for driving the fast turn-off conduction is provided by the contactor coil.
  • This type of technology is characterized in that, during the pull-in and hold phases, when the MOS transistor TR1 is turned off, the current of the coil flows all the way from the driving circuit, and when the driving quick-breaking tube is turned on, the other circuit is quickly turned off. The tube flows.
  • the pull-in and hold phase after the MOS transistor TR1 is turned off, the current flowing through the fast turn-off tube and the drive circuit satisfies the following relationship:
  • the quick turn-off tube has other characteristic relationships.
  • the fast turn-off tube uses an NPN transistor or a MOS tube, the relationship will be different.
  • Figures 3-1 and 3-2 are specific examples of the prior art using NPN transistors and MOS transistors, respectively.
  • the MOS transistor TR1 is turned on and off at a certain frequency.
  • the principle of floating MOS tube driving is that when TR1 is turned off, the current of the inductor needs to be freewheeling. Since the contact coil has a relatively large inductance, it can be approximated as a constant current source. When TR1 is turned off, the coil current will continue to flow in other loops. The coil current will flow through the base of the three-stage tube or the gate of the MOS tube to drive the transistor or MOS tube to conduct.
  • V gs (V) gth + I ds / k), which is on Vgth MOS transistor threshold voltage is typically 3.5V, k is a proportional coefficient MOS transconductance of the tube.
  • V on (V gth + (I ds /k)) * (R 1 + R 2 ) / R 2 .
  • the energy of the quick shut-off tube is always provided by the freewheeling current of the contactor coil, and the above formula is always established, and the quick shut-off tube is always in an enlarged state during the freewheeling, and the pressure drop is large. In the freewheeling, its own loss is also large. It will be apparent to those skilled in the art that the fast shut-off tube cannot be satisfactorily turned on at a lower cost, and the loss cannot be minimized during the contact and suction phases of the contactor.
  • the design is optimized for fast turn-off tube loss.
  • the above formula is available, and the power consumed by the fast turn-off tube is 0.7W.
  • the voltage drop of the triode saturation conduction is generally 0.3V, and the MOS tube on-resistance is selected to be 0.05 ⁇ .
  • the coil current I L 1A, it is easy to know that the triode loss is 0.3. W, the loss of the MOS tube is 0.05W.
  • a circuit block diagram of the coil control circuit of the contactor of the present invention is shown in FIG. 4, and a first embodiment of the coil control circuit of the contactor of the present invention is shown in FIG.
  • a coil control circuit of a contactor includes a switch control circuit, a drive circuit, a fast turn-off circuit, a diode D1, a MOS transistor TR1, and a contactor coil L1.
  • the fast turn-off circuit includes a MOS transistor TR2.
  • the driving circuit includes a capacitor C1, a diode D2, and a resistor R1.
  • the switch control circuit includes a diode D3, an inverter U1, a MOS transistor TR3, a MOS transistor TR4, a first signal port CTRL1, a second signal port CTRL2, and a third signal port CTRL3.
  • each device in the first embodiment is that the cathode of the diode D1 is connected to the input voltage VIN, the anode of the diode D1 is connected to the source of the MOS transistor TR2, and the drain of the MOS transistor TR2 is connected to the drain of the MOS transistor TR1, MOS
  • MOS MOS
  • the source of the transistor TR1 is grounded, one end of the contactor coil L1 is connected to the input voltage VIN, and the other end is connected to the MOS transistor.
  • the drain of TR1 is connected, and the gate of the MOS transistor TR1 is connected to the first signal port CTRL1.
  • the capacitor C1 is connected in parallel across the gate source of the MOS transistor TR2, the cathode of the diode D2 is connected to the gate of the MOS transistor TR2, and the resistor R1 is connected between the anode of the diode D2 and the drain of the MOS transistor TR2.
  • the drain of the MOS transistor TR4 is connected to the gate of the MOS transistor TR2, the gate of the MOS transistor TR4 is connected to the third signal port CTRL3, and the source of the MOS transistor TR4 is connected to the drain of the MOS transistor TR3, and also to the diode D3.
  • the cathode is connected, the source of the MOS transistor TR3 is grounded, and the second signal port CTRL2 is connected to the anode of the diode D3 and the input of the inverter U1, respectively, and the output of the inverter U1 is connected to the gate of the MOS transistor TR3.
  • the first signal port CTRL1 continuously outputs a square wave signal to control the MOS transistor TR1 to continuously turn on and off; the third signal port CTRL3 continuously inputs a low level signal to continuously turn off the MOS transistor TR4.
  • the first signal port CTRL1 does not output a square wave signal to control the MOS transistor TR1 to continuously turn off; the third signal port CTRL3 inputs a high level signal to continuously turn on the MOS transistor TR4.
  • the second signal port CTRL2 is characterized in that the second signal port CTRL2 is at a high level during the pick-up and hold phase of the contactor, and the current of the second signal port CTRL2 passes through the body of the MOS transistor TR4 when the MOS transistor TR1 is turned on.
  • the diode, the body diode of the MOS transistor TR2, and the MOS transistor TR1 charge the capacitor C1, and the voltage of the capacitor C1 is approximately equal to the voltage of the second signal port CTRL2.
  • Capacitor C1 continuously supplies power to the gate of MOS transistor TR2, which allows MOS transistor TR2 to operate in full saturation conduction with little loss.
  • the second signal port CTRL2 is at a low level, and the control MOS transistor TR3 is turned on, and the electric current of the capacitor C1 passes through the circuit of the MOS transistor TR4, the MOS transistor TR3, the body diode of the MOS transistor TR1, and the MOS transistor TR2. Let it go quickly.
  • the electric power of the contactor coil L1 is quickly consumed by the MOS transistor TR2 to achieve a fast turn-off effect.
  • the second signal port CTRL2 may be a current supply terminal of the capacitor C1.
  • the current supply terminal of the capacitor C1 may also be a separately provided power supply port to achieve the same or similar functions, ie, Capacitor C1 is energized so that the voltage of capacitor C1 is much higher than the turn-on threshold of the fast turn-off tube, allowing the fast turn-off tube to be saturated.
  • the portions of the dashed box in Figure 5 can be integrated into the chip, while the capacitor C1, resistor R1 and diode D2 are low-power patch devices that are low cost and small in size.
  • the MOS tube always works in a fully conductive state, and the loss can be almost ignored. Very good results can be obtained by the method of the invention.
  • FIG. 1 A circuit schematic diagram of a coil control circuit of a contactor of a second embodiment of the present invention is shown in FIG.
  • the circuit and the control method are similar to those of the first embodiment, and the present embodiment is different from the first embodiment in that a Zener diode Z1 is used instead of the resistor R1 in the first embodiment.
  • the MOS TR2 In contact with the pull suction holding state, with the operation of the circuit of the first embodiment; the turned-off phase, the MOS TR2 pipe work in the enlarged area, the MOS gate voltage V gs tube TR2 and the drain current I ds satisfies
  • the voltage drop of the drain source of the MOS transistor TR2 is larger during the fast turn-off phase, and the contactor turn-off speed is faster.
  • FIG. 1 A circuit schematic diagram of a coil control circuit of a contactor of a third embodiment of the present invention is shown in FIG.
  • the circuit and the control method are similar to those of the first embodiment.
  • the difference between this embodiment and the first embodiment is that the resistor R1 in the first embodiment is removed in the embodiment, and the drain and the source of the MOS transistor TR2 are connected in parallel.
  • the operation of the circuit is the same as in the first embodiment; in the off-phase, the MOS transistor TR2 is completely turned off, and the electric current of the contactor coil is quickly consumed by the power resistor R3, and the resistor R3 The greater the resistance, the faster the contactor will turn off.
  • a circuit schematic diagram of a coil control circuit of a contactor of a fourth embodiment of the present invention is shown in FIG.
  • a coil control circuit of a contactor includes a switch control circuit, a drive circuit, a fast turn-off circuit, a diode D1, a MOS transistor TR1, and a contactor coil L1.
  • the fast turn-off circuit includes a MOS transistor TR2.
  • the driving circuit includes a capacitor C1, a resistor R4, a diode D2, and a Zener diode Z1.
  • the switch control circuit includes a diode D3, a first signal port CTRL1, and a second signal port CTRL2.
  • each device in the fourth embodiment is that the cathode of the diode D1 is connected to the input voltage VIN, the anode of the diode D1 is connected to the source of the MOS transistor TR2, and the drain of the MOS transistor TR2 is connected to the drain of the MOS transistor TR1, MOS
  • MOS MOS
  • the source of the transistor TR1 is grounded, one end of the contactor coil L1 is connected to the input voltage VIN, and the other end is connected to the MOS transistor.
  • the drain of TR1 is connected, and the gate of the MOS transistor TR1 is connected to the first signal port CTRL1.
  • the capacitor C1 and the resistor R4 are connected in parallel across the gate and source of the MOS transistor TR2, and the diode D2 and the Zener diode Z1 are connected in series and connected in parallel to the gate and drain of the MOS transistor TR2.
  • the cathode of diode D3 is connected to the cathode of diode D2, and the anode of diode D3 is connected to second signal port CTRL2.
  • the first signal port CTRL1 continuously outputs a square wave signal to control the MOS transistor TR1 to continuously turn on and off; in the turn-off phase, the first signal port CTRL1 does not output a square wave signal to control the MOS transistor TR1 to continuously turn off.
  • the second signal port CTRL2 is characterized in that: in the contactor pickup and holding phase, the second signal port CTRL2 is at a high level.
  • the MOS transistor TR1 When the MOS transistor TR1 is turned on, the current of the second signal port CTRL2 passes through the diode D3 and the capacitor C1.
  • the body diode of the MOS transistor TR2 and the circuit of the MOS transistor TR1 charge the capacitor C1; the capacitor C1 continuously supplies power to the gate of the MOS transistor TR2, so that the MOS transistor TR2 is saturated and turned on, and the loss is small.
  • the second signal port CTRL2 is at a low level, the power of the capacitor C1 is consumed by the resistor R4, the MOS transistor enters the amplification region, and the voltage drop across the drain and source of the MOS transistor TR2 is Vgs + VZ , contact The coil is demagnetized at a higher voltage, and the electricity of the contactor coil L1 is quickly consumed by the MOS tube to achieve a fast turn-off effect.
  • the second signal port CTRL2 may be a current supply terminal of the capacitor C1, and the current supply terminal of the capacitor C1 may also be a separately provided power supply port.
  • FIG. 9 is a circuit schematic diagram of a coil control circuit of a contactor according to a fifth embodiment of the present invention, a coil control circuit of the contactor, including a switch control circuit, a drive circuit, a fast turn-off circuit, a diode D1, and a MOS transistor TR1 And contactor coil L1.
  • the fast turn-off circuit includes a MOS transistor TR2 and a resistor R3.
  • the driving circuit includes a capacitor C1, a diode D2, a voltage detecting circuit, and a logic control circuit.
  • connection relationship of each device is: the cathode of the diode D1 is connected to the input voltage VIN, the anode of the diode D1 is connected to the source of the MOS transistor TR2, the drain of the MOS transistor TR2 is connected to the drain of the MOS transistor TR1, and the resistor R3 is connected in parallel.
  • the source of the MOS transistor TR1 is grounded, one end of the contactor coil L1 is connected to the input voltage VIN, and the other end is connected to the drain of the MOS transistor TR1.
  • the anode of the diode D2 is connected to the drain of the MOS transistor TR1, the cathode of the diode is connected to one end of the capacitor C1, the other end of the capacitor C1 is connected to the source of the MOS transistor TR2, and the input end of the voltage detecting circuit is connected to the cathode of the diode D2.
  • the output port of the voltage detection circuit The first input port of the logic control circuit is connected, and the output port of the logic control circuit is connected to the gate of the MOS transistor TR2.
  • the first output port of the switch control circuit is connected to the gate of the MOS transistor TR1, and the second output port of the switch control circuit is connected to the second input port of the logic control circuit.
  • the first output port of the switch control circuit continuously outputs a square wave signal to control the MOS transistor TR1 to continuously turn on and off; in the turn-off phase, the first output port of the switch control circuit does not output a square wave signal to control the MOS.
  • Tube TR1 is continuously disconnected.
  • the control characteristic of the voltage detecting circuit is that the voltage detecting circuit detects the voltage across the capacitor C1. When the voltage across the capacitor is higher than the threshold VTH1, the voltage detecting circuit outputs a high level; when the voltage across the capacitor is lower than the threshold VTH1, the output is low. Level.
  • the control characteristic of the logic control circuit is: in the pickup phase and the suction phase, when the voltage detection circuit outputs a low level, the logic control circuit controls the MOS transistor TR2 to be fully turned on; when the voltage detection circuit outputs a high level, the logic control circuit controls The MOS transistor TR2 is completely disconnected, and the freewheeling current of the contactor coil L1 charges the capacitor C1.
  • the logic timing of the circuit is shown in Figure 10.
  • Capacitor C1 and diode D2 are low-power chip devices, and the voltage detection circuit, logic control circuit and switch control circuit can be integrated into one chip, and the cost of the whole circuit is very low and small.
  • a circuit schematic diagram of a coil control circuit of a contactor of a sixth embodiment of the present invention is shown in FIG.
  • a coil control circuit of a contactor includes a switch control circuit, a drive circuit, a fast turn-off circuit, a diode D1, a MOS transistor TR1, and a contactor coil L1.
  • the switch control circuit includes a MOS transistor TR3, a first signal port CTRL1 and a second signal port CTRL2.
  • the driving circuit includes a resistor R1 and a resistor R4.
  • the fast turn-off circuit includes a PNP transistor Q1.
  • each device in the sixth embodiment is that the cathode of the diode D1 is connected to the input voltage VIN, the anode of the diode D1 is connected to the collector of the PNP tube Q1, and the emitter of the PNP tube Q1 is connected to the drain of the MOS transistor TR1.
  • the source of the MOS transistor TR1 is grounded, one end of the contactor coil L1 is connected to the input voltage VIN, the other end is connected to the drain of the MOS transistor TR1, and the gate of the MOS transistor TR1 is connected to the first signal port CTRL1.
  • the resistor R4 is connected between the base of the PNP transistor Q1 and the collector, the resistor R1 is connected between the base of the PNP transistor Q1 and the drain of the MOS transistor TR3, the source of the MOS transistor TR3 is grounded, and the gate of the MOS transistor TR3 Connected to the second signal CTRL2.
  • the first signal port CTRL1 continuously outputs a square wave signal to control the MOS transistor TR1 to continuously turn on and off; in the turn-off phase, the first signal port CTRL1 does not output a square wave signal to control the MOS transistor TR1 to continuously turn off.
  • the second signal port CTRL2 is characterized in that during the pick-up and hold phase, the second signal port CTRL2 controls the MOS transistor TR3 to be turned on.
  • the MOS transistor TR1 When the MOS transistor TR1 is turned off, the current of the contactor coil passes through the base level of the PNP transistor.
  • Resistor R1 flows to ground, turning the PNP transistor on.
  • the PNP transistor Q1 operates in the saturation region with little loss.
  • the second signal port CTRL2 controls the MOS transistor TR2 to turn off, and the PNP transistor Q1 operates in the amplification region.
  • the portion of the dashed box in Fig. 11 can be implemented in the form of an integrated circuit, and the resistors R1, R4 are low-power patch devices, which are low in cost and small in size.
  • FIG. 1 A circuit schematic diagram of the coil control circuit of the contactor of the seventh embodiment is shown in FIG.
  • a coil control circuit, a circuit and a control method of a contactor are similar to the seventh embodiment.
  • the difference between this embodiment and the seventh embodiment is that the resistor R3 is connected in parallel at the collector and emitter ends of the PNP transistor. .
  • the PNP transistor Q1 is completely disconnected, and the current of the contactor coil is rapidly discharged through R3.
  • the other operating principles are exactly the same as in the fifth embodiment.
  • the portion of the dashed box in Fig. 12 can be implemented in the form of an integrated circuit, and the resistors R1, R4 are low-power patch devices, which are low in cost and small in size.

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Abstract

一种接触器的线圈控制电路，包括开关控制电路、驱动电路、快速关断电路、一只二极管D1、第一MOS管TR1和接触器线圈。快速关断电路至少包括一只MOS管TR2或三极管，二极管的阴极与输入电压VIN相连，二极管的阳极与快速关断电路的第一端口相连，快速关断电路的第二端口与第一MOS管的漏极相连，第一MOS管的源极接地，接触器线圈L1的一端与输入电压相连，接触器线圈的另一端与第一MOS管的漏极相连，快速关断电路的第三端口与驱动电路的输出端口相连，驱动电路的输入端口与开关控制电路的第一输出端口相连，开关控制电路的第二输出端口与第一MOS管的栅极相连。该接触器在能够快速关断的同时，线圈控制电路的损耗更小，所用的器件更少，成本和体积更小。

Description

一种接触器线圈控制电路 技术领域
本发明涉及交流接触器领域，具体涉及接触器线圈的控制电路。
背景技术
传统接触器的电磁控制系统由线圈和铁芯组成，线圈的匝数多大几百甚至上千圈，接触器线圈实际上就是一个感量和内阻很大的电感，通常接触器线圈的感量是几百毫亨到几亨的级别，内阻有几十欧姆到几百欧姆。接触器线圈的整个工作过程可以分为三个阶段：吸合阶段、吸持阶段和关断阶段。在吸合阶段，接触器线圈通过较大的吸合电流，线圈产生较大的电磁力使得接触器触头闭合，该过程一般在200ms以内。当接触器触头吸合后，就进入了吸持阶段，在这个阶段线圈的吸持电流约为吸合电流的十分之一，过大的吸持电流会使线圈的损耗增大。而接触器触头断开的阶段称为关断阶段，线圈的电流被消耗掉接触器触头才会断开。接触器线圈在吸合时需要大电流，而在吸持时仅需较小的电流。传统的接触器无其他控制元件，只能通过线圈本身的阻抗来限流。为了兼顾吸合所需的大电流，线圈的阻抗不能设计得太大。所以在接触器吸持过程中，线圈流过的电流远大于实际需要的电流，多余的能量变成的线圈的热量，不仅浪费能源，而且也会使线圈的温度升高可靠性降低。为了解决传统接触器功耗大的问题，出现了很多接触器的节电电路。
如图1的电路就是一种常见的节电电路，通过调节MOS管T1的占空比，就可调节接触器线圈1的电流。在吸合阶段让T1的占空比较大，在吸持阶段让T1的占空比较小，就可以让接触器线圈实现大电流吸合小电流吸持，从而达到节能的效果。在该电路中,二极管D1提供线圈的续流回路，回路压降约0.7V，在正常工作时低阻抗的续流回路有利于减小整个电路的损耗。当在关断阶段时，需要快速消耗线圈的电流，让接触器可以迅速关断。而这时候低阻抗的续流回路就不利于接触器的快速关断，低阻抗的续流回路会使得线圈电流会维持较长的时间，接触器会延迟关断。在传统接触器产品中，通常关断时间为50ms左右。而加了节电电路的接触器产品，由于线圈低阻抗续流回路的存在，关断时间会上升到200ms左右。在一般的应用场合中，稍微增大关断时间并不会产生太大的影响。但在某些场合，关断时间的增大会产生比较致命的问题。如控制电机正逆转 的接触器，正逆转接触器的吸合与释放必须交替进行，在时间上不能出现重叠。当接触器关断延时较大时，就会出现一个接触器还没完全断开，另一个就吸合，就会导致电源短路而引起危险。
为了实现快速关断功能，必须在接触器关断时，让线圈续流回路的阻抗增大。通常的做法是在用一开关来切换续流回路的阻抗。为了方便，下文把用于切换续流回路阻抗的开关器件都统称为快速关断管。目前带快速关断功能的接触器节电电路，都有一定的问题。如公开号为CN1925085A的专利，其快速关断的电路原理图如图2所示。一种带快速关断功能的接触器节电电路，在吸合与吸持阶段，快速关断管工作在放大区，假设栅极的电压为Vgs，那么漏源之间的电压Vds等于(Vgth+(Ids/k))*(R1+R2)/R2,其中Vgth是MOS管的开启电压阈值，k与MOS管的跨导成比例的系数，Ids是漏源之间的电流；在快速关断阶段，快速关断管断开，线圈电流被R1和Z1快速消耗掉，达到快速关断的效果。该电路的缺点是在吸合与吸持阶段，快速关断管工作在放大区，通常栅极的开启阈值Vgth一般在3.5V以上，所以其漏源之间的电压Vds也是比较大的在3.5V以上，这样在接触器线圈续流时快速关断管就会损耗较多的能量，增加了节电电路在吸合阶段与吸持阶段的损耗。
目前还没看到有技术在这种主功率拓扑下，可以让MOS管作为快速关断管饱和导通的，当然多用一个隔离电源也是可以的，但成本很高。如申请号201210004876.4的专利，该专利中采用的方法是用一个额外的隔离电源给快速关断管的栅极供电。虽然用该方法，MOS管TR2会完全导通，Vds两端的压降很小，但电路会变得非常复杂。隔离电源需要隔离变压器、整流电路、稳压电路等器件，对于整个接触器节电电路来说，隔离电源所占的成本和体积的比例是较大的，同时其本身的损耗也是比较大的。
发明内容
本发明目的是，提出一种接触器的线圈控制电路，在使接触器可以快速关断的同时，线圈控制电路的损耗更小，所用的器件更少，成本和体积更小。
为了实现上述发明目的，本发明提供一种接触器的线圈控制电路，包括开关控制电路、驱动电路、快速关断电路、一只二极管、第一MOS管和接触器线圈。快速关断电路至少包括一只MOS管或三极管。本发明的电路连接关系为：所述的二极管的阴极与 输入电压相连，所述的二极管的阳极与快速关断电路的第一端口相连，快速关断电路的第二端口与第一MOS管的漏极相连，第一MOS管的源极接地，接触器线圈的一端与输入电压相连，接触器的另一端与第一MOS管的漏极相连，快速关断电路的第三端口与驱动电路的输出端口相连，驱动电路的输入端口与开关控制电路的第一输出端口相连，开关控制电路的第二输出端口与第一MOS管的栅极相连。
具体而言，一种接触器的线圈控制电路，适用于控制接触器的线圈，包括续流二极管D1和MOS管TR1，还包括快速关断电路、驱动电路和开关控制电路，快速关断电路，与续流二极管D1形成续流回路，在吸合与吸持阶段，为续流回路提供低阻抗的通路，在关断阶段，为续流回路提供高阻抗通路；驱动电路，为快速关断电路提供驱动电压；开关控制电路，控制MOS管TR1的操作。
优选的，所述驱动电路，在线圈的吸合与吸持阶段，驱动快速关断电路工作于饱和导通状态。
优选的，所述快速关断电路是MOS管，在线圈的吸合与吸持阶段，满足Vgs>(Vgth+Ids/k)的饱和导通参数特征。
优选的，所述快速关断电路，包括MOS管TR2；所述驱动电路，包括电容C1；所述开关控制电路，包括MOS管TR3、MOS管TR4和电流提供端；电容C1并联在MOS管TR2的栅极与源极之间；电流提供端的电流通过MOS管TR4的体二极管、MOS管TR2的体二极管和MOS管TR1所形成的通路给电容C1充电；在MOS管TR2导通时，电容C1持续给MOS管TR2的栅极供电，以让MOS管TR2饱和导通。
优选的，所述驱动电路的电容C1，在关断阶段，通过MOS管TR4、MOS管TR3、MOS管TR1的体二极管和MOS管TR2所形成的回路泄放能量。
优选的，所述快速关断电路，包括三极管Q1；所述驱动电路包括电阻R1；所述开关控制电路，包括MOS管TR3，在吸合阶段与吸持阶段，MOS管TR3导通，形成电阻R1与地的通路，由电阻R1建立三极管Q1的基极电流，以让三极管Q1饱和导通。
优选的，所述开关控制电路，在关断阶段，控制MOS管TR3关断，以让三极管Q1工作在放大状态或完全关断状态。
本发明接触器的线圈控制电路的线圈控制方法为：
在吸合阶段与吸持阶段，开关控制电路的第二输出端口持续输出方波信号控制第一MOS管通断；在关断阶段，开关控制电路的第二输端口不输出方波信号控制第一MOS管持续断开。
快速关断电路可以是MOS管或三极管。当快速关断管为MOS管(以第二MOS管表示)时，该控制电路特征在于：在吸合与吸持阶段，在第一MOS管关断时刻，驱动电路控制第二MOS管导通，第二MOS管的参数特征为Vgs>(Vgth+Ids/k)，其中Vgth是MOS管的开启电压阈值，k是与MOS管的跨导成比例的系数,Vgs为第二MOS管栅极的电压，Ids为第二MOS管漏源之间的电流。驱动电路可以把Vgs设置在10V以上，在该驱动电压下，MOS管可以完全导通，第二MOS管的导通内阻Rdson很小，第二MOS管消耗的功率为Ids 2*Rdson,该损耗是很小的。在关断阶段时，驱动电路控制第二MOS管的栅极电压，栅极电压的参数特征为Vgs＝(Vgth+Ids/k)或Vgs<Vgth,让第二MOS管处于放大区或完全关断，第二MOS管的导通内阻Rdson很大，可以迅速消耗掉接触器线圈的能量，使得接触器可以快速关断。
当快速关断管为NPN三极管(以所述NPN三极管来表示)时，该控制电路的特征在于：在吸合与吸持阶段，在第一MOS管关断时刻，驱动电路控制所述NPN三极管导通，所述NPN三极管的参数特征为Ib>Ice/β，其中Ib是NPN三极管的基极电流，β是三极管的放大倍数,Ice是NPN三极管集电极与发射极之间的电流。当Ib>Ice/β时NPN三极管饱和导通，这时电极与发射极的压降为0.3V。在关断阶段时，驱动电路控制所述NPN三极管的基级电流，参数特征为Ib＝Ice/β或Ib＝0A,让所述NPN三极管处于放大区或完全关断，这时集电极与发射极之间的压降很大，所述NPN三极管消耗的功率为Vce*Ice可以迅速消耗掉接触器线圈的能量，使得接触器可以快速关断。
采用本发明可得到的有益效果为，在达到快速关断效果的同时，几乎不增加额外的损耗。本发明最重要的技术点是提出了一种浮地驱动的方法，让浮地的MOS管可以饱和导通，电路又简单。与现有的方案相比，无缺点。
附图说明
图1为现有技术不带快速关断功能的接触器节电电路的电路原理图；
图2为现有技术带快速关断功能的接触器节电电路的电路原理图；
图3-1为现有技术以三极管作为快速关断管的电路原理图；
图3-2为现有技术以MOS管作为快速关断管的电路原理图；
图4本发明的电路原理框图；
图5为本发明第一实施例的电路原理图；
图6为本发明第二实施例的电路原理图；
图7为本发明第三实施例的电路原理图；
图8为本发明第四实施例的电路原理图；
图9为本发明第五实施例的电路原理图；
图10为本发明第五实施例的逻辑时序图；
图11为本发明第六实施例的电路原理图；
图12为本发明第七实施例的电路原理图。
具体实施方式
在介绍本实施例原理之前首先先说明一下现有技术的特点与缺点。现有技术的电路原理特征框图如附图2所示。在吸合与吸持阶段，当MOS管TR1关断时，快速关断管TR2需要开通给接触器线圈一个续流回路，驱动快速关断导通的能量由接触器线圈提供。这一类技术的特征在于，在吸合与吸持阶段，当MOS管TR1关断后，线圈的电流一路从驱动电电路流过，当驱动快速关断管开启后，另一路从快速关断管流过。在吸合与吸持阶段，MOS管TR1关断后，流过快速关断管和驱动电路的电流满足以下关系式：
IL＝Idri+Ids。除此之外，快速关断管还有其他的特征关系式，当快速关断管采用NPN三极管或MOS管时，关系式会有所区别。
下面进一步说明现有技术其他的关系特征，附图3-1和附图3-2分别是采用NPN三极管和MOS管现有技术的具体例子。在吸合与吸持过程中，MOS管TR1以一定频率占空比通断。浮地MOS管驱动的原理是，当TR1关断时，电感的电流需要续流，由于接触器线圈的感量比较大，可近似为一恒流源。当TR1关断时，线圈电流就会找其他的回路续流，线圈电流会先流过三级管的基级或MOS管的栅极，驱动三极管或MOS管导通。在附图3-1的例子中，当用NPN三极管作为快速关断管时，在吸合与吸持过程中，基级电流Ib和集电极电流Ice满足的特征关系为：Ice＝Ib*β，三极管至终工作在放大区，三极管CE两端的电压比较大。三极管Q1的CE两端电压为Von＝Vb+(IL/(1+β))*R2，其中Vb为基级的偏置电压一般为0.7V，β为三极管的放大倍数。附图3-2中用MOS管作为快速关断管时，在在吸合与吸持过程中，MOS管栅极电压Vgs和漏极电流Ids满足的关系特征为：Vgs＝(Vgth+Ids/k)，其中Vgth是MOS管的开启电压阈值一般为3.5V，k是与MOS管的跨导成比例的系数。MOS管TR2的DS两端的压降为Von＝(Vgth+(Ids/k))*(R1+R2)/R2。在现有的技术中，快速关断管的能量始终由接触器线圈的续流电流提供，上述的公式始终是成立的，快速关断管在续流时始终处于放大状态，压降较大，在续流时自身的损耗也较大。对于本技术领域的技术人员来说，在要求成本较低的情况下，无法让快速关断管饱和导通，在接触器吸合与吸持阶段是无法把损耗做到最小的。
下面通过一个简单的例子来说明本实施例的有益效果。
在附图3-1和附图3-2的电路结构中，快速关断管始终处于放大状态，导通压降比较大。当TR1关断后，线圈电流通过快速关断管和D1所形成的续流回路进行续流，续流回路消耗的能量为IL*Von。
在附图3-1的例子中，以快速关断管损耗最优来设计，三极管的方法倍数选择常见的β＝100，R2＝0Ω，线圈电流IL＝1A，Vb＝0.7V，代入上述的公式可得，快速关断管消耗的功率为0.7W。
在附图3-2的例子中，取R1＝0Ω，R2＝10kΩ，线圈电流IL＝1A，Vgth＝3.5V，那么快速关断管的损耗为3.5W。
假如让快速关断管饱和导通，三极管饱和导通的压降一般为0.3V，MOS管导通电阻选0.05Ω，同样线圈电流IL＝1A，很容易就可以得知三极管的损耗为0.3W，MOS管的损耗为0.05W。
以上是按快速关断管损耗最优来取值的结果，在实际应用中，为了让快速关断管更可靠地工作，R1都不会取0Ω，这时工作在放大状态的快速关断管的损耗会更大。根据GB21518-2008《交流接触器能效限定值及能效等级》的标准要求，1极能效要求1VA以下，很显然，让快速关断管工作在放大状态，都是比较难以实现1极能效的，而采用三极管即使让它工作在饱和状态，也不是非常理想。最理想的方案是选用MOS管作为快速关断管，并且在吸合与吸持状态，让MOS管饱和导通。
表1各情况下快速关断管的损耗对比
Figure PCTCN2016097519-appb-000001
第一实施例
本发明接触器的线圈控制电路的电路原理框图如图4所示，本发明接触器的线圈控制电路的第一实施例如图5所示。一种接触器的线圈控制电路，包括开关控制电路、驱动电路、快速关断电路、二极管D1、MOS管TR1和接触器线圈L1。快速关断电路包括MOS管TR2。驱动电路包括电容C1、二极管D2和电阻R1。开关控制电路包括二极管D3、反向器U1、MOS管TR3、MOS管TR4、第一信号端口CTRL1、第二信号端口CTRL2和第三信号端口CTRL3。
第一实施例的各器件连接关系为：二极管D1的阴极与输入电压VIN相连，二极管D1的阳极与MOS管TR2的源极相连，MOS管TR2的漏极与MOS管TR1的漏极相连，MOS管TR1的源极接地，接触器线圈L1的一端与输入电压VIN相连，另一端与MOS管 TR1的的漏极相连，MOS管TR1的栅极与第一信号端口CTRL1相连。电容C1并联于MOS管TR2的栅源两端，二极管D2的阴极与MOS管TR2的栅极相连，电阻R1连接于二极管D2的阳极与MOS管TR2的漏极之间。MOS管TR4的漏极与MOS管TR2的栅极相连，MOS管TR4的栅极与第三信号端口CTRL3相连，MOS管TR4的源极与MOS管TR3的漏极相连，同时还与二极管D3的阴极相连，MOS管TR3的源极接地，第二信号端口CTRL2分别与二极管D3的阳极和反向器U1的输入端相连，反向器U1的输出与MOS管TR3的栅极相连。
第一实施例的控制方法为：
在吸合阶段与吸持阶段，第一信号端口CTRL1持续输出方波信号控制MOS管TR1持续通断；第三信号端口CTRL3持续输入低电平信号让MOS管TR4持续关断。在关断阶段，第一信号端口CTRL1不输出方波信号控制MOS管TR1持续断开；第三信号端口CTRL3输入高电平信号让MOS管TR4持续开通。
第二信号端口CTRL2的特征在于：在接触器吸合与吸持阶段，第二信号端口CTRL2为高电平，当MOS管TR1导通时，第二信号端口CTRL2的电流经过MOS管TR4的体二极管、MOS管TR2的体二极管、MOS管TR1这一条回路给电容C1充电，电容C1的电压与第二信号端口CTRL2的电压近似相等。电容C1持续给MOS管TR2的栅极供电，可以让MOS管TR2工作在完全饱和导通，损耗很小。在接触器关断阶段，第二信号端口CTRL2为低电平，控制MOS管TR3导通，电容C1的电经过MOS管TR4、MOS管TR3、MOS管TR1的体二极管、MOS管TR2这条回路迅速放掉。这时，MOS管TR2的驱动能量由接触器线圈的续流电流提供，MOS管TR2栅极电压Vgs和漏极电流Ids满足的关系特征为：Vgs＝(Vgth+Ids/k)，MOS管TR2工作在放大区，漏源之间的压降等于Vgs。接触器线圈L1的电被MOS管TR2快速消耗，达到快速关断的效果。在本实施例中，第二信号端口CTRL2可以是电容C1的电流提供端，在其他实施例中，电容C1的电流提供端也可以是单独设置的供电端口，以实现相同或相似的功能，即给电容C1提供能量，让电容C1的电压远高于快速关断管的开启阈值，让快速关断管可以饱和导通。
图5中虚线框的部分都可集成在芯片里，而电容C1、电阻R1和二极管D2都是小功率的贴片器件，成本很低而且体积也很小。在吸合与吸持过程中，MOS管始终工作在完全导通的状态，损耗几乎可以不计。采用本发明的方法可以得到非常好的效果。
第二实施例
本发明的第二实施例的接触器的线圈控制电路的电路原理图如图6所示。电路和控制方法都与第一实施例类似，本实施例与第一实施例的不同之处在于，用一个稳压二极管Z1代替了第一实施例中的电阻R1。在接触器的吸合与吸持状态，电路的工作过程跟第一实施例一样；在关断阶段，MOS管TR2工作在放大区，MOS管TR2栅极电压Vgs和漏极电流Ids满足的关系特征为：Vgs＝(Vgth+Ids/k)，其漏源两端的压降为Vgs+VZ，VZ为稳压二极管Z1的电压。在第二实施例中，MOS管TR2在快速关断阶段漏源的压降更大，接触器关断速度更快。
第三实施例
本发明的第三实施例的接触器的线圈控制电路的电路原理图如图7所示。电路和控制方法与第一实施例类似，本实施例与第一实施例的不同之处在于，在本实施例中去掉了第一实施例中的电阻R1，在MOS管TR2漏源两端并联一个功率电阻R3。在接触器的吸合与吸持状态，电路的工作过程跟第一实施例一样；在关断阶段，MOS管TR2被完全关断，接触器线圈的电被功率电阻R3迅速消耗掉，电阻R3的阻值越大，接触器关断的速度就越快。
第四实施例
本发明的第四实施例的接触器的线圈控制电路的电路原理图如图8所示。一种接触器的线圈控制电路，包括开关控制电路、驱动电路、快速关断电路、二极管D1、MOS管TR1和接触器线圈L1。快速关断电路包括MOS管TR2。驱动电路包括电容C1、电阻R4、二极管D2和稳压二极管Z1。开关控制电路包括二极管D3、第一信号端口CTRL1和第二信号端口CTRL2。
第四实施例的各器件连接关系为：二极管D1的阴极与输入电压VIN相连，二极管D1的阳极与MOS管TR2的源极相连，MOS管TR2的漏极与MOS管TR1的漏极相连，MOS管TR1的源极接地，接触器线圈L1的一端与输入电压VIN相连，另一端与MOS管 TR1的的漏极相连，MOS管TR1的栅极与第一信号端口CTRL1相连。电容C1和电阻R4并联于MOS管TR2的栅源两端，二极管D2和稳压二极管Z1串联后并联于MOS管TR2的栅漏两端。二极管D3的阴极与二极管D2的阴极相连，二极管D3的阳极与第二信号端口CTRL2相连。
第四实施例的控制方法为：
在吸合阶段与吸持阶段，第一信号端口CTRL1持续输出方波信号控制MOS管TR1持续通断；在关断阶段，第一信号端口CTRL1不输出方波信号控制MOS管TR1持续断开。
第二信号端口CTRL2的特征在于：在接触器吸合与吸持阶段，第二信号端口CTRL2为高电平，当MOS管TR1导通时，第二信号端口CTRL2的电流经过二极管D3、电容C1、MOS管TR2的体二极管、MOS管TR1这一条回路给电容C1充电；电容C1持续给MOS管TR2的栅极供电，让MOS管TR2饱和导通，损耗很小。在接触器关断阶段，第二信号端口CTRL2为低电平，电容C1的电被电阻R4消耗掉，MOS管进入放大区，MOS管TR2漏源两端的压降为Vgs+VZ，接触器线圈以一个较高的电压去磁，接触器线圈L1的电被MOS管快速消耗，达到快速关断的效果。第二信号端口CTRL2可以是电容C1的电流提供端，电容C1的电流提供端也可以是单独设置的供电端口。
第五实施例
图9为本发明的第五实施例的接触器的线圈控制电路的电路原理图，一种接触器的线圈控制电路，包括开关控制电路、驱动电路、快速关断电路、二极管D1、MOS管TR1和接触器线圈L1。其中快速关断电路包括MOS管TR2、电阻R3。驱动电路包括电容C1、二极管D2、电压检测电路和逻辑控制电路。
实施例五各器件连接关系为：二极管D1的阴极与输入电压VIN相连，二极管D1的阳极与MOS管TR2的源极相连，MOS管TR2的漏极与MOS管TR1的漏极相连，电阻R3并联于MOS管漏源两端，MOS管TR1的源极接地，接触器线圈L1的一端与输入电压VIN相连，另一端与MOS管TR1的的漏极相连。二极管D2的阳极与MOS管TR1的漏极相连，二极管的阴极与电容C1的一端相连，电容C1的另一端与MOS管TR2的源极相连，电压检测电路的输入端与二极管D2的阴极相连，电压检测电路的输出端口与 逻辑控制电路的第一输入端口相连，逻辑控制电路的输出端口与MOS管TR2的栅极相连。开关控制电路的第一输出端口与MOS管TR1的栅极相连，开关控制电路的第二输出端口与逻辑控制电路的第二输入端口相连。
实施例五的控制方法为：
在吸合阶段与吸持阶段，开关控制电路的第一输出端口持续输出方波信号控制MOS管TR1持续通断；在关断阶段，开关控制电路的第一输出端口不输出方波信号控制MOS管TR1持续断开。
电压检测电路的控制特征在于：电压检测电路检测电容C1两端的电压，当电容两端的电压高于阈值VTH1时，电压检测电路输出高电平；当电容两端电压低于阈值VTH1时，输出低电平。
逻辑控制电路的控制特征在于：在吸合阶段与吸持阶段，当电压检测电路输出低电平时，逻辑控制电路控制MOS管TR2完全导通；当电压检测电路输出高电平时，逻辑控制电路控制MOS管TR2完全断开，让接触器线圈L1的续流电流给电容C1充电。电路的逻辑时序如图10所示。
在接触器线圈续流时，假如MOS管TR2没有导通，线圈电流就会给电容C1充电，电容电压为Vc＝IL*t/C1。电容C1上的电压由电压检测电路控制，电容C1上的电压可以远高于MOS管栅极的开启电压阈值，那么驱动电压DR2就可以使MOS管TR2完全导通，损耗非常小。电容C1和二极管D2都是小功率的贴片器件，而电压检测电路、逻辑控制电路与开关控制电路可以集成化在一个芯片里，整个电路的成本很低体积很小。
第六实施例
本发明的第六实施例的接触器的线圈控制电路的电路原理图如图11所示。一种接触器的线圈控制电路，包括开关控制电路、驱动电路、快速关断电路、二极管D1、MOS管TR1和接触器线圈L1。开关控制电路包括MOS管TR3，第一信号端口CTRL1和第二信号端口CTRL2。驱动电路包括电阻R1和电阻R4。快速关断电路包括PNP三极管Q1。
第六实施例的各器件连接关系为：二极管D1的阴极与输入电压VIN相连，二极管D1的阳极与PNP管Q1的集电极相连，PNP管Q1的发射极与MOS管TR1的漏极相连， MOS管TR1的源极接地，接触器线圈L1的一端与输入电压VIN相连，另一端与MOS管TR1的的漏极相连，MOS管TR1的栅极与第一信号端口CTRL1相连。电阻R4连接于PNP三极管Q1的基级与集电极之间，电阻R1连接于PNP三极管Q1的基级与MOS管TR3的漏极之间，MOS管TR3的源极接地，MOS管TR3的栅极与第二信号CTRL2相连。
第六实施例的控制方法为：
在吸合阶段与吸持阶段，第一信号端口CTRL1持续输出方波信号控制MOS管TR1持续通断；在关断阶段，第一信号端口CTRL1不输出方波信号控制MOS管TR1持续断开。
第二信号端口CTRL2的特征在于：在吸合与吸持阶段，第二信号端口CTRL2控制MOS管TR3导通，当MOS管TR1关断时，接触器线圈的电流会经过PNP三极管的基级、电阻R1流到地，让PNP三极管导通。优选地，电阻R1的取值满足R1＜＝Vin*(1+β)/IL1时，其中，Vin是输入电压值，β是PNP三极管放大倍数，IL1是接触器线圈电流值，PNP三极管Q1工作在饱和区，损耗很小。在关断阶段，第二信号端口CTRL2控制MOS管TR2关断，PNP三极管Q1会工作在放大区。
图11中虚线框的部分可采用集成电路的形式实现，而电阻R1、R4都是小功率的贴片器件，成本很低而且体积也很小。
第七实施例
第七实施例的接触器的线圈控制电路的电路原理图如图12所示。一种接触器的线圈控制电路，电路和控制方法都与第七实施例类似，本实施例与第七实施例的不同之处在于，把电阻R3并联在PNP三极管的集电极与发射极两端。在关断阶段，PNP三极管Q1会完全断开，接触器线圈的电流通过R3来迅速放电，其他工作原理跟第五实施例完全一样。
图12中虚线框的部分可采用集成电路的形式实现，而电阻R1、R4都是小功率的贴片器件，成本很低而且体积也很小。
以上仅是本发明的优选实施方式，应当指出的是，上述优选实施方式不应视为对本发明的限制，本发明的保护范围应当以权利要求所限定的范围为准。对于本技术领域的 普通技术人员来说，在不脱离本发明的精神和范围内，还可以做出若干改进和润饰，这些改进和润饰也应视为本发明的保护范围。

Claims (21)

  1. 一种接触器的线圈控制电路，适用于控制接触器的线圈，包括续流二极管D1和MOS管TR1，其特征在于：还包括快速关断电路、驱动电路和开关控制电路，
    快速关断电路，与续流二极管D1形成续流回路，在吸合与吸持阶段，为续流回路提供低阻抗的通路，在关断阶段，为续流回路提供高阻抗通路；
    驱动电路，为快速关断电路提供驱动电压；
    开关控制电路，控制MOS管TR1的操作。
  2. 根据权利要求1所述的接触器的线圈控制电路，其特征在于：所述驱动电路，在线圈的吸合与吸持阶段，驱动快速关断电路工作于饱和导通状态。
  3. 根据权利要求1所述的接触器的线圈控制电路，其特征在于：所述快速关断电路是MOS管，在线圈的吸合与吸持阶段，满足Vgs>(Vgth+Ids/k)的饱和导通参数特征。
  4. 根据权利要求1所述的接触器的线圈控制电路，其特征在于：所述快速关断电路，包括MOS管TR2；所述驱动电路，包括电容C1；所述开关控制电路，包括MOS管TR3、MOS管TR4和电流提供端；电容C1并联在MOS管TR2的栅极与源极之间；电流提供端的电流通过MOS管TR4的体二极管、MOS管TR2的体二极管和MOS管TR1所形成的通路给电容C1充电；在MOS管TR2导通时，电容C1持续给MOS管TR2的栅极供电，以让MOS管TR2饱和导通。
  5. 根据权利要求4所述的接触器的线圈控制电路，其特征在于：所述驱动电路的电容C1，在关断阶段，通过MOS管TR4、MOS管TR3、MOS管TR1的体二极管和MOS管TR2所形成的回路泄放能量。
  6. 根据权利要求1所述的接触器的线圈控制电路，其特征在于：所述快速关断电路是三极管，在线圈的吸合与吸持阶段，满足Ib>Ice/β的饱和导通参数特征。
  7. 根据权利要求1所述的接触器的线圈控制电路，其特征在于：所述快速关断电路，包括三极管Q1；所述驱动电路包括电阻R1；所述开关控制电路，包括MOS管TR3，在吸合阶段与吸持阶段，MOS管TR3导通，形成电阻R1与地的通路，由电阻R1建立三极管Q1的基极电流，以让三极管Q1饱和导通。
  8. 根据权利要求7所述的接触器的线圈控制电路，其特征在于：所述开关控制电路，在关断阶段，控制MOS管TR3关断，以让三极管Q1工作在放大状态或完全关断状态。
  9. 根据权利要求1或2所述的接触器的线圈控制电路，其特征在于：所述快速关断电路，包括MOS管TR2；二极管D1的阴极与输入电压VIN相连，二极管D1的阳极与MOS管TR2的源极相连，MOS管TR2的漏极与MOS管TR1的漏极相连，MOS管TR1的源极接地。
  10. 根据权利要求9所述的接触器的线圈控制电路，其特征在于：所述驱动电路，包括电容C1、二极管D2和电阻R1；电容C1并联于MOS管TR2的栅源两端，二极管D2的阴极与MOS管TR2的栅极相连，电阻R1连接与二极管D2的阳极与MOS管TR2的漏极之间。
  11. 根据权利要求9所述的接触器的线圈控制电路，其特征在于：所述驱动电路，包括电容C1、二极管D2和稳压二极管Z1；电容C1并联于MOS管TR2的栅源两端，稳压二极管Z1的阴极与MOS管TR2的漏极相连，稳压二极管Z1的阳极与二极管D2的阳极相连，二极管D2的阴极与MOS管TR2的栅极相连。
  12. 根据权利要求9所述的接触器的线圈控制电路，其特征在于：所述驱动电路，包括电容C1，电容C1并联于MOS管TR2栅源两端；所述的快速关断电路还包括电阻R3，电阻R3并联于MOS管TR2漏源两端。
  13. 根据权利要求10-12中任一项所述的接触器的线圈控制电路，其特征在于：所述开关控制电路包括二极管D3、反向器U1、MOS管TR3、MOS管TR4、第一信号端口CTRL1、第二信号端口CTRL2和第三信号端口CTRL4；MOS管TR4的漏极与MOS管TR2的栅极相连，MOS管TR4的栅极与第三信号端口CTRL4相连，MOS管TR4的源极与MOS管 TR3的漏极相连，同时还与二极管D3的阴极相连，MOS管TR3的源极接地，第二信号端口CTRL2分别与二极管D3的阳极和反向器U1的输入端相连，反向器U1的输出与MOS管TR3的栅极相连。
  14. 根据权利要求9所述的接触器的线圈控制电路，其特征在于：所述驱动电路，包括电容C1、二极管D2、电阻R4和稳压二极管Z1；电容C1和电阻R4并联在MOS管TR2的栅源两端，稳压二极管Z1的阴极与MOS管TR2的漏极相连，稳压二极管Z1的阳极与二极管D2的阳极相连，二极管D2的阴极与MOS管TR2的栅极相连。
  15. 权利要求14所述的接触器的线圈控制电路，其特征在于：所述开关控制电路，包括二极管D3、第一信号端口CTRL1和第二信号端口CTRL2；二极管D3的阴极与第二管D2的阴极相连，二极管D3的阳极与第二信号端口CTRL2相连，第一信号端口CTRL1与MOS管TR1的栅极相连。
  16. 根据权利要求9所述的接触器的线圈控制电路，其特征在于：所述驱动电路，包括逻辑控制电路、电压检测电路、二极管D2和电容C1；二极管D2的阳极与MOS管TR1的漏极相连，二极管的阴极与电容C1的一端相连，电容C1的另一端与MOS管TR2的源极相连，电压检测电路的输入端与二极管D2的阴极相连，电压检测电路的输出端口与逻辑控制电路的第一输入端口相连，逻辑控制电路的输出端口与MOS管TR2的栅极相连；所述的快速关断电路还包括电阻R3，电阻R3并联于MOS管TR2漏源两端。
  17. 根据权利要求16所述的接触器的线圈控制电路，其特征在于：所述电压检测电路，检测电容C1两端的电压；当电容C1两端电压高于所述电压检测电路内部的阈值VTH1时，逻辑控制电路输出高电平信号，让MOS管TR2导通；当电容C1两端电压低于所述电压检测电路内部的阈值VTH2时，逻辑控制电路输入低电平信号，让MOS管TR2关断。
  18. 根据权利要求1或2所述的接触器的线圈控制电路，其特征在于：所述快速关断电路，包括PNP三极管Q1。
  19. 根据权利要求18所述的接触器的线圈控制电路，其特征在于，所述的驱动电路，包括电阻R1和电阻R4；电阻R4连接于PNP三极管Q1的基级与集电极之间，电阻R1连接于PNP三极管Q1的基级与MOS管TR2的漏极之间。
  20. 根据权利要求18所示的接触器的线圈控制电路，其特征在于，所述的驱动电路包括电阻R1，电阻R1连接于PNP三极管Q1的基级与MOS管TR2的漏极之间；所述的快速关断电路还包括电阻R3，电阻R3并联于PNP三极管Q1的集射两端。
  21. 根据权利要求19-20所述的接触器的线圈控制电路，其特征在于，所述的开关控制电路，包括MOS管TR3、第一信号端口CTRL1和第二信号端口CTRL2；MOS管TR3的源极接地，MOS管TR2的栅极与第二信号CTRL2相连，第一信号端口CTRL1与MOS管TR1的栅极相连。
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