WO2018014302A1 - 一种电光调制器 - Google Patents

一种电光调制器 Download PDF

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Publication number
WO2018014302A1
WO2018014302A1 PCT/CN2016/090890 CN2016090890W WO2018014302A1 WO 2018014302 A1 WO2018014302 A1 WO 2018014302A1 CN 2016090890 W CN2016090890 W CN 2016090890W WO 2018014302 A1 WO2018014302 A1 WO 2018014302A1
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Prior art keywords
electrode
electro
layer
modulator
optic modulator
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PCT/CN2016/090890
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English (en)
French (fr)
Inventor
李彦波
宋小鹿
董振
冀瑞强
付生猛
曾理
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Huawei Technologies Co Ltd
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Huawei Technologies Co Ltd
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Priority to PCT/CN2016/090890 priority Critical patent/WO2018014302A1/zh
Priority to CN201680081996.0A priority patent/CN108780234B/zh
Priority to EP16909229.3A priority patent/EP3477362B1/en
Publication of WO2018014302A1 publication Critical patent/WO2018014302A1/zh
Priority to US16/252,450 priority patent/US10684497B2/en
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    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/015—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on semiconductor elements having potential barriers, e.g. having a PN or PIN junction
    • G02F1/025—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on semiconductor elements having potential barriers, e.g. having a PN or PIN junction in an optical waveguide structure
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/015—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on semiconductor elements having potential barriers, e.g. having a PN or PIN junction
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/015—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on semiconductor elements having potential barriers, e.g. having a PN or PIN junction
    • G02F1/0151—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on semiconductor elements having potential barriers, e.g. having a PN or PIN junction modulating the refractive index

Definitions

  • the present invention relates to the field of communications, and more particularly to an electro-optic modulator.
  • silicon photonics technology has been extensively studied in the industry and academia, and various functional devices have been developed, including low-loss silicon waveguides, splitting/combiners, electro-optic modulators, filters, and wavelength division multiplexing. / demultiplexer, photodetector, etc.
  • Silicon waveguides have large refractive index differences, allowing waveguide sizes to be reduced to sub-micron levels and enabling micron-scale waveguide bending, so silicon photonics can achieve higher densities
  • Device integration silicon waveguide-based optical devices can be fully fabricated in a mature CMOS process and can be mass-produced at low cost
  • silicon-based optical devices and microelectronic circuits can be monolithically integrated to build more complex systems. Complete more complex functions.
  • Optical communication and optical interconnect technologies are moving toward low power consumption, high density, and large capacity.
  • Silicon-based modulators with low drive voltage, high integration, and high modulation rate are key enabling technologies. Future application scenarios such as optical backplanes and high-capacity clusters also require a chip-out solution for high-density multi-channel integrated electro-optic modulators.
  • the integrated multi-channel electro-optic modulator is the key enabling technology for chip light-emitting.
  • Silicon-based photonic integration technology can mass-produce optical devices and complex-function photonic chips at low cost by using mature silicon processes. Therefore, silicon-based electro-optic modulators based on silicon technology have the potential to achieve high-density multi-channel integration.
  • the invention provides an electro-optic modulator for further improving the integration degree of the electro-optic modulator, thereby effectively reducing the difficulty of layout and wiring pressure of the high-sealing device.
  • the present invention provides an electro-optic modulator comprising: an input waveguide, a beam splitter coupled to the input waveguide, a modulation arm disposed on each branch of the beam splitter and used to modulate a signal, Also included is a combiner coupled to each branch of the beam splitter and used to combine signals, and an output waveguide coupled to the combiner; wherein each modulation arm is correspondingly provided with a double layer electrode,
  • the first layer electrode in the double layer electrode is a high frequency traveling wave electrode for changing the carrier concentration in the modulation arm
  • the second layer electrode is a DC electrode having an inductance function
  • the second layer electrode The inductor formed in the inductor has an inductance connected to the high frequency traveling wave electrode.
  • the number of the modulation arms is two and symmetrically arranged, wherein each modulation arm cooperates with a double-layer electrode, and the first layer electrode of the double-layer electrode uses a high-frequency traveling wave electrode, and the second layer
  • the electrode adopts a DC electrode capable of forming an inductor, so that the electro-optic modulator has a part of the function of the T-type biaser, which improves the integration degree of the electro-optic modulator, reduces the structure of the external connection of the electro-optic modulator, and ensures the performance of the electro-optic modulator.
  • the integration degree of the electro-optic modulator can be further improved, the difficulty of high-sealed layout and wiring pressure can be effectively alleviated, and the multi-channel high-speed signal can be routed and packaged in the substrate.
  • the method further includes a capacitor disposed on one side of the input waveguide and corresponding to each modulation arm; wherein the electro-optic modulator has a modulator high-frequency signal input end, and one end of the capacitor The modulator high frequency signal input end of the electro-optic modulator is connected, the other end of the capacitor is connected to the high frequency traveling wave electrode, and the capacitance and the inductance in the second layer electrode are respectively high
  • the pulsating wave electrodes are connected and form a T-type bias.
  • the T-type biaser is arranged in the electro-optic modulator, thereby further improving the integration degree of the electro-optic modulator, effectively reducing the difficulty of the high-sealing layout and the wiring pressure, and realizing the passage of many channels of high-speed signals in the substrate. Line and package.
  • the electro-optic modulator has a silicon substrate, a buried silicon dioxide disposed on the silicon substrate, and a modulator active region silicon waveguide and dioxide disposed on the buried silicon dioxide Silicon isolation layer;
  • the second layer electrode is disposed on a side of the silicon dioxide isolation layer facing away from the buried silicon dioxide, the first layer electrode is buried in the silicon dioxide isolation layer, and the first layer The layer electrode and the second layer electrode are electrically connected; one electrode of the capacitor is disposed on the back of the silicon dioxide isolation layer Another electrode is buried in one side of the buried silicon dioxide in the silicon dioxide isolation layer.
  • the silicon dioxide isolation layer is provided with a via hole, and the first layer electrode and the second layer electrode pass through a metal filled in the via hole. connection. This facilitates the connection between the two layers of electrodes.
  • a hot electrode loaded on each branch of the combiner is also included. Further improve the performance of the electro-optic modulator and improve the integration of the electro-optic modulator.
  • the second layer electrode includes a modulator inductance corresponding to each modulation arm; one end of each modulator inductor is connected to a modulator DC signal input terminal, and the other end is connected to the high frequency line Wave electrode connection. Further improve the performance of the electro-optic modulator and improve the integration of the electro-optic modulator.
  • the second layer electrode further includes a driver inductor corresponding to each of the modulation arms, one end of each driver inductor is connected to the driver DC signal input terminal, and the other end is higher than the modulator of the electro-optic modulator The frequency signal input is connected. Further improve the performance of the electro-optic modulator and improve the integration of the electro-optic modulator.
  • FIG. 1 is a top plan view of an electro-optic modulator according to Embodiment 1 of the present invention.
  • FIG. 2 is a schematic diagram showing distribution of layers of an electro-optic modulator according to Embodiment 1 of the present invention
  • FIG. 3 is a top plan view of an electro-optic modulator according to Embodiment 2 of the present invention.
  • FIG. 4 is a top plan view of an electro-optic modulator according to Embodiment 3 of the present invention.
  • FIG. 5 is a top plan view of an electro-optic modulator according to Embodiment 4 of the present invention.
  • FIG. 1 is a top view of an electro-optic modulator according to an embodiment of the present invention
  • FIG. 2 is a schematic diagram showing the distribution of layers of the electro-optic modulator of the first embodiment of the present invention.
  • the electro-optic modulator provided in this embodiment includes an input waveguide 11, a beam splitter 12 connected to the input waveguide 11, a modulation arm disposed on each branch of the beam splitter 12 and used for modulating a signal, with reference to FIG.
  • the number of branches is two, and the two branches are symmetrically set, that is, the two modulation arms are symmetrically arranged.
  • a combiner 13 coupled to each branch of the beam splitter 12 and used to combine the signals, and an output waveguide 14 coupled to the combiner 13 are included; in specific use, the input continuous optical signal is input from the input
  • the waveguide 11 enters and is split into two beams of equal power through the beam splitter 12, respectively passed through the modulation arm, then merged through a combiner 13, and finally outputted by the output waveguide 14.
  • each modulation arm is correspondingly provided with a double-layer electrode
  • the first layer electrode 21 of the double-layer electrode is a high-frequency traveling wave electrode for changing the carrier concentration in the modulation arm (hereinafter "high-frequency traveling wave electrode"
  • the first electrode 21 is a DC electrode having an inductance function
  • the inductance formed in the second layer electrode 26 has an inductance connected to the high-frequency traveling wave electrode.
  • the modulated electrical signal is applied to the modulation arm through the high frequency traveling wave electrode, and the effective refractive index of the modulated waveguide region is changed by changing the carrier concentration in the modulation region waveguide of the modulation arm, thereby dynamically changing the phase of the two optical signals.
  • the difference forms a modulation.
  • the second layer electrode 26 serves as a DC electrode, and the inductor function is realized by the elongated metal trace design of the DC electrode. Therefore, the electro-optic modulator has a part of the function of the T-type bias, which improves the integration of the electro-optic modulator and reduces the external connection of the electro-optic modulator.
  • connection can further improve the integration degree of the electro-optic modulator under the premise of ensuring that the performance of the electro-optic modulator is not affected, effectively reducing the difficulty of layout and wiring pressure of the high-sealing device, and realizing the routing and packaging of many channels of high-speed signals in the substrate. .
  • a capacitor 24 is disposed at one end of the input waveguide 11, the electro-optic modulator has a modulator high-frequency signal input terminal 33, one end of the capacitor 24 is connected to the modulator high-frequency signal input terminal 33 of the electro-optic modulator, and the capacitor 24 is further One end is connected to the high frequency traveling wave electrode, and the inductance in the capacitor 24 and the second layer electrode 26 are respectively connected to the high frequency traveling wave electrode and constitute a T-type bias. Realize the loading of high frequency RF signals and DC signals.
  • the second layer electrode 26 may be plural, such as including a driver inductor 22 and a modulator inductor 23.
  • the second layer electrode 26 of the electro-optic modulator provided in this embodiment includes a modulator inductor 23 corresponding to each modulation arm; one end of each modulator inductor 23 is connected to a modulator DC signal input terminal. 31, the other end is connected to the high frequency traveling wave electrode.
  • the DC bias signal is input from the modulator DC signal input terminal 31, loaded onto the modulation arm through the modulator inductor 23, and the reverse bias of the modulation arm PN junction is realized; the modulated RF electrical signal is input from the modulator high frequency signal input terminal 33.
  • the capacitor 24 is loaded onto the modulation arm, and the effective refractive index is changed by changing the carrier concentration in the waveguide of the modulation region, thereby dynamically changing the phase difference of the two optical signals to form a modulation.
  • the electro-optic modulator further includes a thermal electrode 25 loaded on each branch of the combiner 13, and the thermoelectrode 25 is used to control the modulator by using a thermo-optic effect to change the effective refractive index of the waveguide region by applying a thermo-optic effect. Phase offset point.
  • the second layer electrode 26 further includes a driver inductor 22 corresponding to each modulation arm; one end of each driver inductor 22 is connected to a driver DC signal input terminal 32, and the other end of each driver inductor 22 is modulated with an electro-optic modulator.
  • the high frequency signal input terminal 33 is connected.
  • FIG. 2 is a schematic diagram showing the distribution of layers of the electro-optic modulator of the first embodiment of the present invention.
  • the electro-optic modulator provided in this embodiment has a silicon substrate 50, and is disposed. a buried silicon oxide 60 on a silicon substrate, and a modulator active region silicon waveguide 80 and a silicon dioxide isolation layer 70 disposed on the buried silicon oxide 60;
  • the second layer electrode 26 is disposed on a side of the silicon dioxide isolation layer 70 facing away from the buried silicon dioxide 60, and the first layer electrode 21 is embedded in the silicon dioxide isolation layer 70, and the first layer electrode 21 and the second layer
  • the electrodes 26 are electrically connected; at the time of specific connection, the silicon dioxide isolation layer 70 is provided with via holes, and the first layer electrode 21 and the second layer electrode 26 are connected by a metal filled in the via holes.
  • the first layer electrode 21 is connected to the modulator active region silicon waveguide 80 through a via filling metal, and is then connected to the second layer electrode 26 through the via metal.
  • One electrode of the capacitor 24 is disposed on a side of the silicon dioxide isolation layer 70 facing away from the buried silicon oxide 60, and the other electrode is buried in the silicon dioxide isolation layer 60.
  • the electro-optic modulator electrode adopts a two-layer electrode structure, and at the same time realizes the functions of the high-frequency electrode and the Bias Tee.
  • the specific implementation manner is that the first layer of the electrode structure (the first layer electrode) realizes the high frequency traveling wave electrode, the second layer metal of the electrode structure (the second layer electrode) realizes the DC electrode, and the elongated metal trace design through the DC electrode.
  • two layers of electrode metal are arranged at the input end of the modulator signal to realize the function of the capacitor 24 by overlapping design.
  • the inductor and capacitor 24 formed in the electrode structure are respectively connected to the RF electrode of the modulator to form a Bias Tee structure to realize loading of the high frequency RF signal and the DC signal.
  • the invention can realize high-density multi-channel integration of the modulator, and can be compatible with the high-sealed layout, and realize high-speed and high-density electrical packaging of the high-density multi-channel modulator.
  • the invention integrates the modulator structure of the Bias-Tee, and can further improve the integration degree of the electro-optic modulator under the premise of ensuring that the performance of the electro-optic modulator is not affected, effectively reducing the difficulty of layout and wiring pressure of the high-sealing device, and realizing many channels of high-speed signals. Routing and packaging within the substrate.
  • FIG. 3 is a schematic structural diagram of an electro-optic modulator according to Embodiment 2 of the present invention.
  • the second layer electrode includes only the modulator inductor 23.
  • the specific implementation manner is as follows: the first layer of the electrode structure realizes the high frequency traveling wave electrode, the second layer of the electrode structure realizes the DC electrode, and the inductor function is realized by the elongated metal trace design of the DC electrode, at the signal input end of the modulator
  • the two-layer electrode metal realizes the function of the capacitor 24 by overlapping design.
  • the inductor and capacitor 24 formed in the electrode structure are respectively connected to the RF electrode of the modulator to form a Bias Tee structure to realize a high frequency RF signal. Number and DC signal loading.
  • the modulator inductor 23 is coupled to the RF electrode to provide a DC voltage to the modulator; the integrated capacitor 24 is coupled to the modulator inductor 23 and the RF input pad, respectively, to provide a RF signal voltage to the modulator.
  • Other analyses are similar and will not be repeated here.
  • FIG. 4 is a schematic structural diagram of an electro-optic modulator according to Embodiment 3 of the present invention, wherein Embodiment 3 differs from Embodiment 1 in the dual-layer electrode structure of the modulator.
  • the second layer electrode includes the modulator inductor 23 and the driver inductor 22, eliminating the capacitance 24, as shown in FIG.
  • the specific implementation manner is as follows: the first layer of the electrode structure realizes the high frequency traveling wave electrode, the second layer of the electrode structure realizes the DC electrode, and the inductor function is realized by the elongated metal trace design of the DC electrode, and the modulator inductor 23 passes through the RF electrode. Connected to provide a DC voltage to the modulator, the driver inductor 22 provides DC voltage to the Driver; other analysis is similar, and will not be described here.
  • FIG. 5 is a schematic structural diagram of an electro-optic modulator according to Embodiment 4 of the present invention, wherein Embodiment 4 differs from Embodiment 1 in the dual-layer electrode structure of the modulator.
  • the second layer electrode contains only the modulator inductance 23, eliminating the capacitance 24 and the driver inductance 22, as shown in FIG.
  • the specific implementation manner is as follows: the first layer of the electrode structure realizes the high frequency traveling wave electrode, the second layer of the electrode structure realizes the DC electrode, and the inductor function is realized by the elongated metal trace design of the DC electrode, and the modulator inductor 23 passes through the RF electrode. Connected to provide a DC voltage to the modulator. Other analyses are similar and will not be repeated here.
  • the electro-optic modulator provided by the present invention adopts a two-layer electrode structure, integrates part of the structure of the T-type biaser into the electro-optic modulator, or adopts a two-layer electrode structure through the arrangement.
  • An inductor and capacitor 24 are formed to integrate the entire T-type bias into the electro-optic modulator.
  • the invention can realize high-density multi-channel integration of the modulator, and can be compatible with the high-sealed layout, and realize high-speed and high-density electrical packaging of the high-density multi-channel modulator.
  • the modulator structure of the integrated T-type biaser can further improve the integration degree of the electro-optic modulator under the premise of ensuring that the performance of the electro-optic modulator is not affected, thereby effectively reducing the difficulty of layout and wiring pressure of the high-sealing device, and realizing many channels.
  • High speed signals are routed and packaged within the substrate.
  • Double layer of integrated inductor and capacitor 24 The pole structure process is compatible with the standard silicon light manufacturing process and is compact, making it ideal for high-density, multi-channel, high-capacity applications.

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  • Physics & Mathematics (AREA)
  • Nonlinear Science (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Optical Modulation, Optical Deflection, Nonlinear Optics, Optical Demodulation, Optical Logic Elements (AREA)

Abstract

一种电光调制器，该电光调制器包括：输入波导（11），与输入波导（11）连接的分束器（12），与每个分束器（12）的分支对应并用于调制信号的调制臂；其中，每个调制臂对应设置有双层电极，双层电极中的第一层电极（21）为用于改变调制臂中的载流子浓度的高频行波电极，第二层电极（26）为具备电感功能的直流电极，且第二层电极（26）中形成的电感与电光调制器的高频行波电极相连接。第二层电极（26）采用能够形成电感的直流电极，从而使得电光调制器具备T型偏置器的一部分功能，在保证电光调制器性能不受影响的前提下，可以进一步提升电光调制器的集成度，有效减轻高密封装布局难度和布线压力，实现多通道高速信号在基板内走线和封装。

Description

一种电光调制器 技术领域
本发明涉及到通信的技术领域，尤其涉及到一种电光调制器。
背景技术
近年来，硅光子技术被业界和学术界进行了广泛研究，各种功能器件相继被开发出来，包括低损耗的硅波导、分束/合束器、电光调制器、滤波器、波分复用器/解复用器、光电探测器等。与其他光集成技术相比，硅光子技术的优势包括：硅波导具有大折射率差，使得波导尺寸可以缩小到亚微米量级并实现微米级的波导弯曲，因此硅光子技术可以实现更高密度的器件集成；基于硅波导的光器件可以完全采用成熟的CMOS工艺加工，可以低成本批量生产；基于硅波导的光器件与微电子电路可以进行单片集成，从而可以构建更复杂的系统，以完成更复杂的功能。
光通信和光互连技术向着低功耗、高密度和大容量的趋势发展，具有低驱压、高集成度和高调制速率的硅基调制器是关键的使能技术。未来的光背板和大容量集群等应用场景，也都需要高密多通道集成电光调制器的芯片出光的解决方案。而集成多通道电光调制器是芯片出光的关键使能技术。硅基光子集成技术可以利用成熟的硅工艺低成本地批量制造光器件及复杂功能的光子芯片，因此，基于硅工艺的硅基电光调制器有实现高密多通道集成的潜力。但需要能够和高密封装布局兼容，实现高密多通道调制器的高速电封装，业界目前还没有成熟的解决方案。此外未来的CFP8、CFP16等多通道高容量密度光模块，也需要高密多通道调制器及高速高密电封装技术和解决方案。
发明内容
本发明提供了一种电光调制器，用以进一步提升电光调制器的集成度，有效减轻高密封装布局难度和布线压力。
本发明提供了一种电光调制器，该电光调制器包括：输入波导，与所述输入波导连接的分束器，设置在所述分束器的每个分支上并用于调制信号的调制臂，还包括与所述分束器的每个分支连接并用于将信号合束的合束器，以及与所述合束器连接的输出波导；其中，每个调制臂对应设置有双层电极，所述双层电极中的第一层电极为用于改变所述调制臂中的载流子浓度的高频行波电极，第二层电极为具备电感功能的直流电极，且所述第二层电极中形成的电感中具有与所述高频行波电极相连接的电感。
在上述实施方案中，调制臂的个数为两个，且对称设置，其中，每个调制臂配合一个双层电极，该双层电极的第一层电极采用高频行波电极，第二层电极采用能够形成电感的直流电极，从而使得电光调制器具备T型偏置器的一部分功能，提高了电光调制器的集成度，降低了电光调制器外部连接的结构，在保证电光调制器性能不受影响的前提下，可以进一步提升电光调制器的集成度，有效减轻高密封装布局难度和布线压力，实现甚多通道高速信号在基板内走线和封装。
在一个可选的方案中，还包括设置在所述输入波导一侧并与每个调制臂对应的电容；其中，所述电光调制器具有调制器高频信号输入端，所述电容的一端与所述电光调制器的调制器高频信号输入端连接，所述电容的另一端与所述高频行波电极连接，且所述电容与所述第二层电极中的电感分别与所述高频行波电极连接并组成T型偏置器。在该方案中，将T型偏置器布置到电光调制器中，从而进一步的提高了电光调制器的集成度，有效减轻高密封装布局难度和布线压力，实现甚多通道高速信号在基板内走线和封装。
在具体设置时，电光调制器具有硅衬底，设置在所述硅衬底上的埋层二氧化硅，以及设置在所述埋层二氧化硅上的调制器有源区硅波导和二氧化硅隔离层；
其中，所述第二层电极设置在所述二氧化硅隔离层背离所述埋层二氧化硅的一面，所述第一层电极埋设在所述二氧化硅隔离层中，且所述第一层电极及第二层电极电连接；所述电容的一个电极设置在所述二氧化硅隔离层背 离所述埋层二氧化硅的一面，另一个电极埋设在所述二氧化硅隔离层中。
在第一层电极和第二层电极具体电连接时，所述二氧化硅隔离层设置有过孔，所述第一层电极及所述第二层电极通过填充在所述过孔内的金属连接。从而方便了两层电极之间的连接设置。
此外，还包括加载在所述合束器的每个分支上的热电极。进一步的改善电光调制器的性能，提高电光调制器的集成度。
在一个具体的实施例中，所述第二层电极包括与每个调制臂对应的调制器电感；每个调制器电感的一端连接有调制器直流信号输入端，另一端与所述高频行波电极连接。进一步的改善电光调制器的性能，提高电光调制器的集成度。
在一个具体的实施例中，第二层电极还包括与每个调制臂对应的驱动器电感，每个驱动器电感的一端连接有驱动器直流信号输入端，另一端与所述电光调制器的调制器高频信号输入端连接。进一步的改善电光调制器的性能，提高电光调制器的集成度。
附图说明
图1为本发明实施例一提供的电光调制器的俯视图；
图2为本发明实施例一提供的电光调制器的截面各层分布示意图；
图3为本发明实施例二提供的电光调制器的俯视图；
图4为本发明实施例三提供的电光调制器的俯视图；
图5为本发明实施例四提供的电光调制器的俯视图。
附图标记：
11-输入波导 12-分束器 13-合束器
14-输出波导 21-第一层电极 22-驱动器电感
23-调制器电感 24-电容 25-热电极
26-第二层电极 31-调制器直流信号输入端
32-驱动器直流信号输入端 33-调制器高频信号输入端
50-硅衬底 60-埋层二氧化硅 70-二氧化硅隔离层
80-调制器有源区硅波导
具体实施方式
为了使本发明的目的、技术方案和优点更加清楚，下面将结合附图对本发明作进一步地详细描述，显然，所描述的实施例仅仅是本发明一部分实施例，而不是全部的实施例。基于本发明中的实施例，本领域普通技术人员在没有做出创造性劳动前提下所获得的所有其它实施例，都属于本发明保护的范围。
如图1及图2所示，图1给出了本发明实施例一电光调制器俯视图，图2给出了本发明实施例一的电光调制器的截面各层分布示意图。
本实施例提供的电光调制器包括：输入波导11，与输入波导11连接的分束器12，设置在分束器12的每个分支上并用于调制信号的调制臂，参考图1，在具体设置时，分支的个数为两个，两个分支对称设置，即两个调制臂对称设置。此外，还包括与分束器12的每个分支连接并用于将信号合束的合束器13，以及与合束器13连接的输出波导14；在具体使用时，输入的连续光信号从输入波导11进入，经过分束器12分为功率相等的两束光，分别通过调制臂，然后再通过一个合束器13合束，最后由输出波导14输出。
其中，每个调制臂对应设置有双层电极，双层电极中的第一层电极21为用于改变调制臂中的载流子浓度的高频行波电极(下文的“高频行波电极”即第一电极21)，第二层电极26为具备电感功能的直流电极，所述第二层电极26中形成的电感中具有与高频行波电极相连接的电感。
在调制时，调制电信号通过高频行波电极加载到调制臂上，通过改变调制臂的调制区域波导中的载流子浓度改变调制波导区域有效折射率，从而动态改变两束光信号的相位差形成调制。第二层电极26作为直流电极，通过直流电极的细长金属走线设计实现电感功能。从而使得电光调制器具备T型偏置器的一部分功能，提高了电光调制器的集成度，降低了电光调制器外部连 接的结构，在保证电光调制器性能不受影响的前提下，可以进一步提升电光调制器的集成度，有效减轻高密封装布局难度和布线压力，实现甚多通道高速信号在基板内走线和封装。
此外，在调制器信号输入端还设置了两层电极金属，通过交叠设计实现电容24功能。其中，即在输入波导11的一端设置了电容24，电光调制器具有调制器高频信号输入端33，电容24的一端与电光调制器的调制器高频信号输入端33连接，电容24的另一端与高频行波电极连接，且电容24与第二层电极26中的电感分别与所述高频行波电极连接并组成T型偏置器。实现高频射频信号和直流信号的加载。
在具体设置时，该第二层电极26可以为多个，如：包含驱动器电感22和调制器电感23。从图1可以看到，本实施例提供的电光调制器的第二层电极26包括与每个调制臂对应的调制器电感23；每个调制器电感23的一端连接有调制器直流信号输入端31，另一端与高频行波电极连接。直流偏置信号从调制器直流信号输入端31输入，通过调制器电感23加载到调制臂上，实现调制臂PN结的反向偏置；调制射频电信号从调制器高频信号输入端33输入，通过电容24加载到调制臂上，通过改变调制区波导中的载流子浓度改变其有效折射率，从而动态改变两束光信号的相位差形成调制。此外，该电光调制器还包括加载在所述合束器13的每个分支上的热电极25，该热电极25上通过加载直流信号利用热光效应改变波导区有效折射率，从而控制调制器的相位偏置点。此外，第二层电极26还包括与每个调制臂对应的驱动器电感22；每个驱动器电感22的一端连接有驱动器直流信号输入端32，每个驱动器电感22的另一端与电光调制器的调制器高频信号输入端33连接。通过集成驱动器电感22，直流偏置信号从驱动器直流信号输入端32输入，通过驱动器电感22可以加载到向调制器提供高频射频信号的驱动器上，给驱动器提供直流电压。
一并参考图2，图2给出了本发明实施例一的电光调制器的截面各层分布示意图。由图2可以看出，本实施例提供的电光调制器具有硅衬底50，设置 在硅衬底上的埋层二氧化硅60，以及设置在埋层二氧化硅60上的调制器有源区硅波导80和二氧化硅隔离层70；
其中，第二层电极26设置在二氧化硅隔离层70背离埋层二氧化硅60的一面，第一层电极21埋设在二氧化硅隔离层70中，且第一层电极21及第二层电极26电连接；在具体连接时，二氧化硅隔离层70设置有过孔，第一层电极21及第二层电极26通过填充在过孔内的金属连接。具体的，第一层电极21通过过孔填充金属与调制器有源区硅波导80相连，再通过过孔金属与第二层电极26相接。
电容24的一个电极设置在二氧化硅隔离层70背离埋层二氧化硅60的一面，另一个电极埋设在二氧化硅隔离层60中。
通过上述描述可以看出，该电光调制器电极采用双层电极结构，同时实现高频电极和Bias Tee的功能。具体实现方式为，电极结构第一层金属(第一层电极)实现高频行波电极，电极结构第二层金属(第二层电极)实现直流电极，通过直流电极的细长金属走线设计实现电感功能，在调制器信号输入端设置两层电极金属通过交叠设计实现电容24功能。电极结构中形成的电感和电容24分别与调制器的射频电极相连接，形成Bias Tee结构，实现高频射频信号和直流信号的加载。相比现有技术，本发明可以实现调制器的高密多通道集成，同时能够和高密封装布局兼容，实现高密多通道调制器的高速高密电封装。本发明集成Bias-Tee的调制器结构，在保证电光调制器性能不受影响的前提下，可以进一步提升电光调制器的集成度，有效减轻高密封装布局难度和布线压力，实现甚多通道高速信号在基板内走线和封装。
如图3所示，图3示出了本发明实施例二提供的电光调制器的结构示意图，在本实施例中，第二层电极仅包含调制器电感23。其中，具体实现方式为：电极结构第一层金属实现高频行波电极，电极结构第二层金属实现直流电极，通过直流电极的细长金属走线设计实现电感功能，在调制器信号输入端两层电极金属通过交叠设计实现电容24功能。电极结构中形成的电感和电容24分别与调制器的射频电极相连接，形成Bias Tee结构，实现高频射频信 号和直流信号的加载。调制器电感23通过与射频电极相连接，给调制器提供直流电压；集成电容24分别与调制器电感23和射频输入pad相连接，给调制器提供射频信号电压。其他分析类似，这里不再赘述。
如图4所示，图4示出了本发明实施例三提供的电光调制器的结构示意图，其中，跟实施例一相比，实施例三的不同之处在于调制器双层电极结构中的第二层电极包含调制器电感23和驱动器电感22，省掉了电容24，如图4所示。
具体实现方式为：电极结构第一层金属实现高频行波电极，电极结构第二层金属实现直流电极，通过直流电极的细长金属走线设计实现电感功能，调制器电感23通过与射频电极相连接，给调制器提供直流电压，驱动器电感22实现给Driver提供直流电压；其他分析类似，这里不再赘述。
如图5所示，图5示出了本发明实施例四提供的电光调制器的结构示意图，其中，跟实施例一相比，实施例四的不同之处在于调制器双层电极结构中的第二层电极仅包含调制器电感23，省掉了电容24和驱动器电感22，如图5所示。
具体实现方式为：电极结构第一层金属实现高频行波电极，电极结构第二层金属实现直流电极，通过直流电极的细长金属走线设计实现电感功能，调制器电感23通过与射频电极相连接，给调制器提供直流电压。其他分析类似，这里不再赘述。
通过上述几个具体的实施例可以看出，本发明提供的电光调制器采用双层电极结构，将T型偏置器的部分结构集成到电光调制器中，或者采用通过设置的双层电极结构形成电感及电容24，将整个T型偏置器集成到电光调制器中。相比现有技术，本发明可以实现调制器的高密多通道集成，同时能够和高密封装布局兼容，实现高密多通道调制器的高速高密电封装。本发明集成T型偏置器的调制器结构，在保证电光调制器性能不受影响的前提下，可以进一步提升电光调制器的集成度，有效减轻高密封装布局难度和布线压力，实现甚多通道高速信号在基板内走线和封装。该集成电感和电容24的双层电 极结构工艺与标准硅光制造工艺兼容，结构紧凑，非常适用于高密多通道大容量的应用场景。
显然，本领域的技术人员可以对本发明进行各种改动和变型而不脱离本发明的精神和范围。这样，倘若本发明的这些修改和变型属于本发明权利要求及其等同技术的范围之内，则本发明也意图包含这些改动和变型在内。

Claims (7)

  1. 一种电光调制器，其特征在于，包括：输入波导，与所述输入波导连接的分束器，设置在所述分束器的每个分支上并用于调制信号的调制臂，还包括与所述分束器的每个分支连接并用于将信号合束的合束器，以及与所述合束器连接的输出波导；其中，每个调制臂对应设置有双层电极，所述双层电极中的第一层电极为用于改变所述调制臂中的载流子浓度的高频行波电极，第二层电极为具备电感功能的直流电极，且所述第二层电极中形成的电感中具有与所述高频行波电极相连接的电感。
  2. 如权利要求1所述的电光调制器，其特征在于，还包括设置在所述输入波导一侧并与每个调制臂对应的电容；其中，所述电光调制器具有调制器高频信号输入端，所述电容的一端与所述调制器高频信号输入端连接，所述电容的另一端与所述高频行波电极连接，且所述电容与所述第二层电极中的电感分别与所述高频行波电极连接并组成T型偏置器。
  3. 如权利要求2所述的电光调制器，其特征在于，所述电光调制器具有硅衬底，设置在所述硅衬底上的埋层二氧化硅，以及设置在所述埋层二氧化硅上的调制器有源区硅波导和二氧化硅隔离层；
    其中，所述第二层电极设置在所述二氧化硅隔离层背离所述埋层二氧化硅的一面，所述第一层电极埋设在所述二氧化硅隔离层中，且所述第一层电极及第二层电极电连接；所述电容的一个电极设置在所述二氧化硅隔离层背离所述埋层二氧化硅的一面，另一个电极埋设在所述二氧化硅隔离层中。
  4. 如权利要求3所述的电光调制器，其特征在于，所述二氧化硅隔离层设置有过孔，所述第一层电极及所述第二层电极通过填充在所述过孔内的金属连接。
  5. 如权利要求1所述的电光调制器，其特征在于，还包括加载在所述合束器的每个分支上的热电极。
  6. 如权利要求2～4任一项所述的电光调制器，其特征在于，所述第二层 电极包括与每个调制臂对应的调制器电感；每个调制器电感的一端连接有调制器直流信号输入端，另一端与所述高频行波电极连接。
  7. 如权利要求6所述的电光调制器，其特征在于，所述第二层电极还包括与每个调制臂对应的驱动器电感；每个驱动器电感的一端连接有驱动器直流信号输入端，另一端与所述电光调制器的调制器高频信号输入端连接。
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