WO2018026314A1 - Бета-вольтаическая батарея - Google Patents
Бета-вольтаическая батарея Download PDFInfo
- Publication number
- WO2018026314A1 WO2018026314A1 PCT/RU2017/000575 RU2017000575W WO2018026314A1 WO 2018026314 A1 WO2018026314 A1 WO 2018026314A1 RU 2017000575 W RU2017000575 W RU 2017000575W WO 2018026314 A1 WO2018026314 A1 WO 2018026314A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- radioisotope
- converters
- elements
- semiconductor
- battery
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Ceased
Links
Classifications
-
- G—PHYSICS
- G21—NUCLEAR PHYSICS; NUCLEAR ENGINEERING
- G21H—OBTAINING ENERGY FROM RADIOACTIVE SOURCES; APPLICATIONS OF RADIATION FROM RADIOACTIVE SOURCES, NOT OTHERWISE PROVIDED FOR; UTILISING COSMIC RADIATION
- G21H1/00—Arrangements for obtaining electrical energy from radioactive sources, e.g. from radioactive isotopes, nuclear or atomic batteries
- G21H1/06—Cells wherein radiation is applied to the junction of different semiconductor materials
-
- G—PHYSICS
- G21—NUCLEAR PHYSICS; NUCLEAR ENGINEERING
- G21H—OBTAINING ENERGY FROM RADIOACTIVE SOURCES; APPLICATIONS OF RADIATION FROM RADIOACTIVE SOURCES, NOT OTHERWISE PROVIDED FOR; UTILISING COSMIC RADIATION
- G21H1/00—Arrangements for obtaining electrical energy from radioactive sources, e.g. from radioactive isotopes, nuclear or atomic batteries
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F19/00—Integrated devices, or assemblies of multiple devices, comprising at least one photovoltaic cell covered by group H10F10/00, e.g. photovoltaic modules
- H10F19/50—Integrated devices comprising at least one photovoltaic cell and other types of semiconductor or solid-state components
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F19/00—Integrated devices, or assemblies of multiple devices, comprising at least one photovoltaic cell covered by group H10F10/00, e.g. photovoltaic modules
- H10F19/90—Structures for connecting between photovoltaic cells, e.g. interconnections or insulating spacers
- H10F19/902—Structures for connecting between photovoltaic cells, e.g. interconnections or insulating spacers for series or parallel connection of photovoltaic cells
- H10F19/906—Structures for connecting between photovoltaic cells, e.g. interconnections or insulating spacers for series or parallel connection of photovoltaic cells characterised by the materials of the structures
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
Definitions
- the invention relates to atomic and semiconductor technology, in particular to the creation of power sources based on semiconductor converters using the beta-voltaic effect.
- a semiconductor converter of beta radiation into electricity is known (see patent RU N ° 2 452 060, IPC HQ1L31 / 04) containing a semiconductor wafer with a textured surface, a diode structure along the textured surface and a layer of radioactive beta-emitting substance.
- the textured surface is made in the form of many through channels in the form of a circle, square or other arbitrary shape, and the radioactive substance covers the walls of the channels and most of the rest of the surface of the semiconductor.
- the walls of the channels and the surface of the semiconductor have a microrelief, and the distance between the channels is preferably not more than 100 ⁇ m.
- As a beta emitter radionuclides nickel-63, tritium, or both are used.
- the texture is pre-created using photolithography or a laser pulse. Taking into account the features of methods for creating a textured surface, it is difficult to ensure the accuracy of obtaining a given surface of the microchannels, and, consequently, the amount of applied radioisotope. In this case, it is not possible to obtain a power source with a strictly specified power.
- beta-voltaic battery of high specific power comprising a housing, a cover with positive and negative electrodes separated by an insulating gasket and elements 1,2 located in the housing in a certain order, 3.4 and 5.
- Element 1 is a split ring, responsible for the movement of current in the battery.
- Element 1 is made of ceramic material on which a thick gold layer is formed by the deposition method to obtain a low resistance path between the upper and lower parts of the element. In ceramics create a hole in which the element 2 is placed.
- Element 2 is a beta-voltaic device based on a semiconductor SiC that converts beta radiation energy into electricity and is a semiconductor converter. On the upper and lower sides of the semiconductor converter, ohmic contacts are formed by deposition.
- Element 3 is a radioisotope element, which is a radioisotope foil combined with a conductive element and an insulating section made of A1N.
- the conductive element is formed by the deposition method and is a thick gold layer to obtain a low resistance path between the upper and lower parts of the element.
- Element 4 is an insulating element made of A1N, equipped with a conductive element formed by the deposition method and representing a thick gold layer to obtain a low resistance path between the upper and lower parts of element 4.
- Element 5 is a sequentially included element containing a radioisotope foil, insulating material and conductive sections. On the side sections, the conductive sections are formed by the deposition method and represent a thick gold layer to obtain a low resistance path between the upper and lower parts of element 5.
- the conductive material closest to the radioisotope foil is made in the form of a conductive ring passing through the entire element, which also serves as a low resistance path between the upper and the lower parts of the element.
- elements 1, 2, 3 and 4 are used.
- An insulating element 4, element 1 with element 2 located in its hole, element 3 with a radioisotope source and a cover are installed in series.
- the above set of elements can be configured into one or more sets connected in parallel until the required output power is reached.
- elements 1, 2, 3, 4 and 5 are used.
- an insulating element 4 is installed in series in the housing element 1 with element 2 located in its hole, element 5 with a radioisotope source and a conductive ring, again element 1 with element 2 placed in its hole and element 3 with a radioisotope source.
- element 5 is installed with a radioisotope source and a conductive ring.
- Element 3 with a radioisotope source is placed above the uppermost element 2.
- a cover with positive and negative electrodes is installed on the entire structure, thus completing the package.
- the above set of elements can be configured into one or more sets connected in parallel until the required output power is reached.
- the claimed central radioisotope layer contains one or more of the following elements: a tritium radioisotope, nickel-63, phosphorus-33 or promethium.
- a tritium radioisotope nickel-63, phosphorus-33 or promethium.
- the well-known beta-voltaic battery is selected by the applicant as a prototype.
- a disadvantage of the known beta-voltaic battery is that its output electrical parameters (voltage and current) is determined by the number of elements and their series or parallel connection, carried out during assembly, and cannot be changed during operation.
- one element 3 with a radioisotope source is placed between element 2 with a SiC-based semiconductor converter and insulating element 4, and the second element 3 is mounted above the uppermost element 2.
- the radioisotope elements 3 only a part of the radiation of one side of the plate is used, which is turned directly toward the semiconductor converter adjacent to the radioisotope, and as a result, the efficiency of use is reduced and 2 times) of the expensive radioisotope.
- both sides of the radioisotope are used for elements 5, and for elements 3 only one side is also used.
- the technical result that can be obtained by using the proposed beta-voltaic battery is to increase its specific power due to the most complete conversion of semiconductor energy converters of radiation of radioisotope elements into electrical energy and the use of a radioisotope element (for example, metallic nickel-63 or promethium-147) as electrical contacts between semiconductor converters, as well as creating the possibility of electrical connection of battery packs with a regulator .
- a radioisotope element for example, metallic nickel-63 or promethium-147
- the specified technical result is achieved by the fact that in a beta-voltaic battery containing a housing, a cover, semiconductor converters based on pn or pin structure made of silicon, AZV5 compounds, solid solutions of aluminum, gallium, nitrogen or phosphorus (or all together), made with profiled alloying, insulating and radioisotope elements and conductive contacts, configurable in one or more sets, connected in parallel and (or) in series to achieve the required output power, semiconductors
- the transducers with profiled alloying are made with an increased space charge region over the entire width of the semiconductor converter.
- the kit is assembled from semiconductor converters directed by opposite-polarity surfaces to each other, conductive radioisotope elements are placed between opposite-polar surfaces.
- kits are separated by insulating elements equipped with grooves evenly spaced along their perimeter, the number of which is at least equal to twice the number of kits in the beta-voltaic battery.
- Opposite grooves are provided with conductive contacts, one of which is brought out to the lower surface of the insulating element in the region of the groove location, and the second to the upper surface, and the conductive contacts of the insulating elements are made with the possibility of their electrical connection, as with the conductive contacts of the adjacent extreme semiconductor converters of each kit, and with the regulator.
- a highly enriched nickel-63 isotope is used as a conductive radioisotope element.
- the conductive contacts of the extreme semiconductor converters of the sets are made by deposition on p or p - layers of a conductive metal, such as copper.
- the conductive contacts of the extreme semiconductor converters of the sets are made by applying to nickel or p - nickel layers - 63, the optimal thickness.
- the implementation of semiconductor converters with profiled alloying with an increased space charge region over the entire thickness of the p- ⁇ or pin structure of the converter allows to obtain the most complete conversion of beta radiation energy into electrical energy by reducing carrier recombination and decreasing absorption beta particles in the layer of the material of the Converter and, thereby, increase the specific power of the beta-voltaic battery (hereinafter referred to as the battery).
- Assembling a set of transducers directed by opposite-polarity surfaces to each other, and placing conductive radioisotope elements between them, allows, firstly, to use the radiation emitted from both sides by the radioisotope element, converting it into electrical energy, and secondly, to carry out electrical serial connection of the converters between themselves, using a conductive radioisotope element as an electrical contact between them.
- kits with insulating elements equipped with grooves evenly spaced along their perimeter the number of which is at least equal to twice the number of kits in a beta-voltaic battery (hereinafter referred to as the battery) and the supply of opposite insulating grooves elements by conducting contacts, when assembling the battery due to the rotation of the insulating elements relative to each other by a step between the grooves, to have free grooves without contacts above all grooves with conductive contacts and place conductors in them, and thereby create the possibility of electrical connection of conductive contacts with the controller.
- the battery beta-voltaic battery
- nickel-63 as a conductive radioisotope element with an enrichment of 80% and higher, deposited on the p-layers of the converters, allows, firstly, to increase the specific electric power of the battery, and secondly, to use nickel-63 as an electrical contact between p - a layer of one converter, and a p-layer of a second converter adjacent to it.
- b contacts of insulating elements, using a conductive radioisotope element as a contact between them, and also increase the specific power of the battery.
- FIG. 1 battery assembly with a regulator
- FIG. 2 remote element from FIG. one ;
- Fig.4 is a section aa from Fig. one;
- the proposed battery 1 consists (see FIGS. 1 and 2) of converters 2 assembled in a stack of one or more sets 3, separated by insulating elements 4.
- FIG. 1 shows a battery consisting of three sets.
- Converters 2 in sets 3 are directed with opposite polarity surfaces to each other, and conductive radioisotope elements 5 are placed between surfaces with opposite polarities.
- a radioisotope element 5 a highly enriched nickel-63 radioisotope is deposited on p - layers of converters 2.
- Upper 6 and lower 7 transducers of each set 3 are provided with contacts 8 made by deposition on p or p - layers, respectively, of conductive material, for example copper, moreover, on the upper converters 6, contacts 8 are applied I n - layers, and the lower 7 - on the p - layers.
- contacts 8 are applied I n - layers, and the lower 7 - on the p - layers.
- grooves 9 are made uniformly around the perimeter of the insulating element 4, and the total number of grooves 9 is at least twice the number of sets 3 in the battery 1 or exceeds it, depending on the design of the battery 1.
- Opposite grooves 9 of the insulating elements 5 see Fig. 3) are provided with contacts 10 and 11, and the remaining grooves 9 remain free.
- Each contact 10 consists of a conductive section 12 deposited on the lower surface 13 of the insulating element 5 in the area of the groove 9, and a conductive section 14 connected thereto, located directly in the groove 9.
- Each contact 11 consists of a conductive section 12 deposited on the upper surface 15 of the insulating element 5 in the area of the opposite groove 9 and connected to it conductive section 14, located directly in the groove 9.
- Each set 3 is installed in the insulating sleeve 18 according to the outer diameter.
- the battery 1 is placed in the housing 19 with the lower negative electrode 20 and the upper positive electrode 21 fixed in it, mounted in the housing 19 through insulating gaskets 22 and 23.
- the space between the housing 19 and the sets 3 is filled with dielectric mastic or compound 24.
- the lower electrode 20, contact 11 of the lower insulating element 17, contacts 10 and 11 of the insulating elements 5, contact 10 of the upper insulating element 16 and the upper electrode 21 are connected (see Fig. 4) by conductors 25, 26, 27, 28, 29 and 30, with a regulator 31 installed in case 19 al upper insulating member 16.
- the proposed battery 1 and its housing 19, insulating elements 5, 16 and 17 and semiconductor converters 2, 6 and 7 can be made of square or rectangular cross-section with the placement of the electrodes 20 and 21 in the upper part of the battery 1.
- the receipt in the battery 1 of electrical energy is as follows.
- Beta particles leaving the surface of the radioisotope element 5, fall into adjacent transducers 2. Having high energy beta particles fly through doped either p- or ⁇ -layers of adjacent transducers 2. When beta particles hit the space charge region (SCR), they collide with atoms of this region. Due to the fact that the electric bond between the atom and electrons in the SCR is much weaker than in the p and ⁇ layers of the transducers 2, the electron detaches from the atom — the generation of an electron-hole pair. The free electron begins to tend to the region of increased negative charge — to the ⁇ layer of transducer 2.
- SCR space charge region
- the remaining electrons in the SCR tend to fill the resulting absence of an electron and also tend to the region of negative charge, thereby, virtually, an atom with an absent electron moves to the region of positive charge in the p-layer of the transducer 2.
- a beta particle moves in the SCR region and generates electron – hole pairs until it loses all energy.
- the sets 3 are connected in series with the transducers 2 in series.
- Negative charge is connected by their contacts 8 through conductive sections 12 with contacts 11 and 10 located in the slots 9 of the insulating elements 4, 16 and 17 from the ⁇ -layer of the lower transducer 7, and to pin 11 - a positive charge from the p - layer of the upper transducer 6.
- Negative and positive charges from contacts 10 and 11 through the conductors 26, 27, 28 and 29 are supplied to the regulator 31, from which the voltage conductors 25 and 30 are fed to the lower 20 and upper 21 electrodes.
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- General Engineering & Computer Science (AREA)
- High Energy & Nuclear Physics (AREA)
- Secondary Cells (AREA)
- Life Sciences & Earth Sciences (AREA)
- Sustainable Development (AREA)
- Sustainable Energy (AREA)
- Photovoltaic Devices (AREA)
- Hybrid Cells (AREA)
Abstract
Description
Claims
Priority Applications (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2019527114A JP6720413B2 (ja) | 2016-08-04 | 2017-08-07 | ベータボルタ電池 |
| KR1020197003009A KR102134223B1 (ko) | 2016-08-04 | 2017-08-07 | 베타전지 |
| EP17837322.1A EP3509104B1 (en) | 2016-08-04 | 2017-08-07 | Betavoltaic battery |
| US16/321,802 US20210296020A1 (en) | 2016-08-04 | 2017-08-07 | Beta-Voltaic Battery |
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| RU2016132280A RU2632588C1 (ru) | 2016-08-04 | 2016-08-04 | Бета-вольтаическая батарея |
| RU2016132280 | 2016-08-04 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| WO2018026314A1 true WO2018026314A1 (ru) | 2018-02-08 |
Family
ID=60040607
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| PCT/RU2017/000575 Ceased WO2018026314A1 (ru) | 2016-08-04 | 2017-08-07 | Бета-вольтаическая батарея |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US20210296020A1 (ru) |
| EP (1) | EP3509104B1 (ru) |
| JP (1) | JP6720413B2 (ru) |
| KR (1) | KR102134223B1 (ru) |
| RU (1) | RU2632588C1 (ru) |
| WO (1) | WO2018026314A1 (ru) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2018098825A1 (zh) | 2016-12-02 | 2018-06-07 | 华为技术有限公司 | 一种工作模式的切换方法及用户设备 |
| RU2731547C1 (ru) * | 2019-12-26 | 2020-09-04 | Федеральное государственное автономное образовательное учреждение высшего образования "Национальный исследовательский университет "Московский институт электронной техники" | Автономный бета-вольтаический источник питания |
| CA3241215A1 (en) * | 2021-12-16 | 2023-06-22 | Steven Christopher WHITEHEAD | Electrical generator system |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20110031572A1 (en) * | 2009-08-06 | 2011-02-10 | Michael Spencer | High power density betavoltaic battery |
| US20110291210A1 (en) * | 2010-05-28 | 2011-12-01 | Medtronic, Inc. | Betavoltaic power converter die stacking |
| RU124856U1 (ru) * | 2012-09-19 | 2013-02-10 | Федеральное государственное бюджетное образовательное учреждение высшего профессионального образования "Ульяновский государственный университет" | Автономный импульсный источник электрического питания с длительным сроком службы |
| US20130154438A1 (en) * | 2011-12-20 | 2013-06-20 | Marvin Tan Xing Haw | Power-Scalable Betavoltaic Battery |
Family Cites Families (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CA2120295C (en) * | 1993-04-21 | 1998-09-15 | Nazir P. Kherani | Nuclear batteries |
| US5642014A (en) * | 1995-09-27 | 1997-06-24 | Lucent Technologies Inc. | Self-powered device |
| US7692411B2 (en) * | 2006-01-05 | 2010-04-06 | Tpl, Inc. | System for energy harvesting and/or generation, storage, and delivery |
| KR101257588B1 (ko) * | 2009-03-12 | 2013-04-26 | 더 큐레이터스 오브 더 유니버시티 오브 미주리 | 고 에너지 밀도를 갖는 마이크로 방사성동위원소 파워 소스 장치 |
| RU2414037C1 (ru) * | 2009-11-16 | 2011-03-10 | Государственное образовательное учреждение высшего профессионального образования Томский государственный университет систем управления и радиоэлектроники (ТУСУР) | Автономная фотоэлектрическая система электропитания |
| US9266437B2 (en) * | 2012-07-23 | 2016-02-23 | Ultratech, Inc. | Betavoltaic power sources for transportation applications |
| TW201519456A (zh) * | 2013-11-13 | 2015-05-16 | Yun-Shan Chang | 適應性太陽能集電裝置 |
| US10784010B2 (en) * | 2014-11-14 | 2020-09-22 | Kinetic Energy Australia Pty. Ltd. | Electrical generator system |
-
2016
- 2016-08-04 RU RU2016132280A patent/RU2632588C1/ru active
-
2017
- 2017-08-07 WO PCT/RU2017/000575 patent/WO2018026314A1/ru not_active Ceased
- 2017-08-07 KR KR1020197003009A patent/KR102134223B1/ko not_active Expired - Fee Related
- 2017-08-07 US US16/321,802 patent/US20210296020A1/en not_active Abandoned
- 2017-08-07 JP JP2019527114A patent/JP6720413B2/ja not_active Expired - Fee Related
- 2017-08-07 EP EP17837322.1A patent/EP3509104B1/en not_active Not-in-force
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20110031572A1 (en) * | 2009-08-06 | 2011-02-10 | Michael Spencer | High power density betavoltaic battery |
| US20110291210A1 (en) * | 2010-05-28 | 2011-12-01 | Medtronic, Inc. | Betavoltaic power converter die stacking |
| US20130154438A1 (en) * | 2011-12-20 | 2013-06-20 | Marvin Tan Xing Haw | Power-Scalable Betavoltaic Battery |
| RU124856U1 (ru) * | 2012-09-19 | 2013-02-10 | Федеральное государственное бюджетное образовательное учреждение высшего профессионального образования "Ульяновский государственный университет" | Автономный импульсный источник электрического питания с длительным сроком службы |
Non-Patent Citations (1)
| Title |
|---|
| See also references of EP3509104A4 * |
Also Published As
| Publication number | Publication date |
|---|---|
| JP2019529944A (ja) | 2019-10-17 |
| RU2632588C1 (ru) | 2017-10-06 |
| US20210296020A1 (en) | 2021-09-23 |
| JP6720413B2 (ja) | 2020-07-08 |
| EP3509104A1 (en) | 2019-07-10 |
| EP3509104A4 (en) | 2020-05-06 |
| EP3509104B1 (en) | 2022-02-23 |
| KR102134223B1 (ko) | 2020-07-16 |
| KR20190025671A (ko) | 2019-03-11 |
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