WO2018059598A1 - 光源组件、显示装置及光源组件的制备方法 - Google Patents

光源组件、显示装置及光源组件的制备方法 Download PDF

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Publication number
WO2018059598A1
WO2018059598A1 PCT/CN2017/105194 CN2017105194W WO2018059598A1 WO 2018059598 A1 WO2018059598 A1 WO 2018059598A1 CN 2017105194 W CN2017105194 W CN 2017105194W WO 2018059598 A1 WO2018059598 A1 WO 2018059598A1
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Prior art keywords
light source
source assembly
led chip
layer
carrier
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Ceased
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PCT/CN2017/105194
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English (en)
French (fr)
Inventor
王磊
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Shenzhen Lt Optoelectronics Co Ltd
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Shenzhen Lt Optoelectronics Co Ltd
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Application filed by Shenzhen Lt Optoelectronics Co Ltd filed Critical Shenzhen Lt Optoelectronics Co Ltd
Priority to EP17855048.9A priority Critical patent/EP3537208A4/en
Priority to KR1020197009298A priority patent/KR20190075912A/ko
Priority to JP2019538552A priority patent/JP6970750B2/ja
Publication of WO2018059598A1 publication Critical patent/WO2018059598A1/zh
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

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    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1335—Structural association of cells with optical devices, e.g. polarisers or reflectors
    • G02F1/1336—Illuminating devices
    • G02F1/133602—Direct backlight
    • G02F1/133603—Direct backlight with LEDs
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F21—LIGHTING
    • F21V—FUNCTIONAL FEATURES OR DETAILS OF LIGHTING DEVICES OR SYSTEMS THEREOF; STRUCTURAL COMBINATIONS OF LIGHTING DEVICES WITH OTHER ARTICLES, NOT OTHERWISE PROVIDED FOR
    • F21V23/00—Arrangement of electric circuit elements in or on lighting devices
    • F21V23/06—Arrangement of electric circuit elements in or on lighting devices the elements being coupling devices, e.g. connectors
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1335—Structural association of cells with optical devices, e.g. polarisers or reflectors
    • G02F1/1336—Illuminating devices
    • G02F1/133602—Direct backlight
    • G02F1/133606—Direct backlight including a specially adapted diffusing, scattering or light controlling members
    • G—PHYSICS
    • G02—OPTICS
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    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
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    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1335—Structural association of cells with optical devices, e.g. polarisers or reflectors
    • G02F1/1336—Illuminating devices
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    • G02F1/133606—Direct backlight including a specially adapted diffusing, scattering or light controlling members
    • G02F1/133607—Direct backlight including a specially adapted diffusing, scattering or light controlling members the light controlling member including light directing or refracting elements, e.g. prisms or lenses
    • G—PHYSICS
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    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
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    • G02F1/1336—Illuminating devices
    • G02F1/133602—Direct backlight
    • G02F1/133608—Direct backlight including particular frames or supporting means
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1335—Structural association of cells with optical devices, e.g. polarisers or reflectors
    • G02F1/1336—Illuminating devices
    • G02F1/133602—Direct backlight
    • G02F1/133609—Direct backlight including means for improving the color mixing, e.g. white
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1335—Structural association of cells with optical devices, e.g. polarisers or reflectors
    • G02F1/1336—Illuminating devices
    • G02F1/133602—Direct backlight
    • G02F1/133611—Direct backlight including means for improving the brightness uniformity
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1335—Structural association of cells with optical devices, e.g. polarisers or reflectors
    • G02F1/1336—Illuminating devices
    • G02F1/133614—Illuminating devices using photoluminescence, e.g. phosphors illuminated by UV or blue light
    • G—PHYSICS
    • G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09F—DISPLAYING; ADVERTISING; SIGNS; LABELS OR NAME-PLATES; SEALS
    • G09F9/00—Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements
    • G09F9/30—Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements in which the desired character or characters are formed by combining individual elements
    • G09F9/33—Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements in which the desired character or characters are formed by combining individual elements being semiconductor devices, e.g. diodes
    • G—PHYSICS
    • G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
    • G09G3/00—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes
    • G09G3/20—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters
    • G09G3/22—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources
    • G09G3/30—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels
    • G09G3/32—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/851—Wavelength conversion means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/851—Wavelength conversion means
    • H10H20/8511—Wavelength conversion means characterised by their material, e.g. binder
    • H10H20/8512—Wavelength conversion materials
    • H10H20/8513—Wavelength conversion materials having two or more wavelength conversion materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/851—Wavelength conversion means
    • H10H20/8514—Wavelength conversion means characterised by their shape, e.g. plate or foil
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/851—Wavelength conversion means
    • H10H20/8515—Wavelength conversion means not being in contact with the bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/855—Optical field-shaping means, e.g. lenses
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
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    • H10H20/856—Reflecting means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/857—Interconnections, e.g. lead-frames, bond wires or solder balls
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
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    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1335—Structural association of cells with optical devices, e.g. polarisers or reflectors
    • G02F1/1336—Illuminating devices
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    • G02F1/133612—Electrical details
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
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    • H10H20/036—Manufacture or treatment of packages
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
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    • H10H20/0361—Manufacture or treatment of packages of wavelength conversion means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
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    • H10H20/0363—Manufacture or treatment of packages of optical field-shaping means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
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Definitions

  • the present invention relates to the field of LED display, and in particular, to a light source assembly, a display device, and a method of fabricating the light source assembly.
  • LED Light Emitting Diode
  • the existing LED display assembly generally packs a plurality of LED chips on a circuit board, and the existing LED light source has a surrounding frame or a closed structure for the purpose of using a side-side illumination or a direct-lit illumination.
  • the fluorescent glue is formed on the LED chip by coating, but the preparation process often requires setting a light reflection area at the edge of the LED light source, so that the LED light source has uneven illumination effect and needs to be provided with a reflector or the like. To achieve the effect of uniformity, the overall thickness of the backlight provided for the display component is large, and it is difficult to meet the demand for light and thin digital products.
  • OLED Organic Light-Emitting Diode
  • the present invention provides a light source assembly, a display device, and a method of preparing the light source assembly.
  • a light source assembly the light source assembly includes a carrier, an array of a plurality of LED chips disposed on the carrier, and fluorescent light covering the LED chip and the carrier a layer, the light emitted by the plurality of LED chips is homogenized by the same fluorescent layer to form a continuous light emitting surface, the area of the light emitting surface being equal to the area of the fluorescent layer away from the side of the LED chip;
  • the ratio of the area of the light emitting surface to the side of the carrier carrying the LED chip is 1: (0.9-1.1).
  • the ratio of the area of the light emitting face of the phosphor layer to the area of the side of the carrier carrying the LED chip is 1:1.
  • the phosphor layer is provided with 1-13 LED chips per square millimeter.
  • the spacing between two adjacent LED chips is 0.01 mm - 1 mm
  • the length of the LED chips is 0.01 mm - 1 mm
  • the width of the LED chips is 0.01 mm - 0.5 mm.
  • the light source assembly has a thickness of 0.01 mm to 0.6 mm.
  • the carrier is provided with a plurality of land patterns and a plurality of sets of wires on one side of the LED chip, and the positive electrode and the negative electrode of the LED chip are respectively soldered on two adjacently disposed two land patterns.
  • the wire connects part or all of the land pattern; the front projection area of the single LED chip is greater than or equal to the area occupied by the two pad patterns corresponding to the LED chip.
  • the carrier is provided with a plurality of pins for connecting with the external circuit, and the pin is electrically connected to the LED chip.
  • the carrier comprises two superposed film layers, a conductive layer is disposed between the two film layers, the conductive layer comprises a plurality of land patterns, and the land patterns are electrically connected by wires, wherein a plurality of windows for exposing the corresponding land patterns are formed on a film layer, and the positive and negative electrodes of the LED chip are corresponding to solder on different land patterns; the light source assembly further includes a fluorescent layer and a same fluorescent layer A gap between the LED chips is filled and covers all of the LED chips.
  • the film layer is a flexible material.
  • all of the land patterns and wires are disposed within the orthographic projection area of the phosphor layer.
  • the carrier is provided on one side of the LED chip and a reflective layer is disposed between the phosphor layers, the reflective layer is provided with a plurality of windows, and the LED chip is disposed within the window.
  • the light source assembly further includes a white edge, and the white edge is formed on The carrier is disposed above and around the fluorescent layer; the periphery of the white edge is coincident with the periphery of the carrier; and the white side has a thickness of 0.001 mm to 0.1 mm.
  • a microlens layer is directly attached on the fluorescent layer, and the microlens layer is provided with a plurality of microlenses disposed corresponding to the LED chips.
  • a display device comprising a display assembly and a light source assembly as described above, the light source assembly being directly attached to the display assembly.
  • the edge of the carrier is flush with the edge of the display assembly.
  • a method for fabricating a light source assembly comprising the steps of: providing a carrier and forming a plurality of land patterns and connection land patterns on one side of the carrier; a plurality of sets of wires, the other side of which forms a pin connected to the external circuit; a solder spot is formed at a corresponding position of the land pattern; the LED chip is placed above the corresponding solder point so that the positive and negative electrodes of the LED chip are soldered correspondingly It is fixed on two different land patterns disposed adjacent to each other; after overlying the plurality of LED chips to form the same pre-fabricated layer, the desired light source assembly is obtained.
  • the light source assembly and the display device provided by the invention have the following beneficial effects:
  • the present invention provides a display device including a fluorescent layer overlying the LED chip and the carrier, the plurality of LED chips being defined as a plurality of regions, and the LED chips in the plurality of regions are driven by the driving circuit
  • the partition driving control is for displaying an image, and a light emitting surface formed by a plurality of the LED chips is homogenized by the same fluorescent layer.
  • the LED chip can directly display an image.
  • the display device can be used as an alternative to the OLED display device, thereby providing a solution with high feasibility, low cost and high yield for obtaining a large screen and a thin and light display device and its electronic device.
  • the present invention also provides a wearing device, which can be fixed on the main body of the wearing device, such as clothes, hats, shoes, watches or school bags, etc., since the display device is light and thin, it can be directly sewn Above the body of the wear device.
  • FIG. 1 is a schematic exploded view of a three-dimensional structure of a light source assembly according to a first embodiment of the present invention.
  • 2A is a schematic view showing the light-emitting effect of two LED chips disposed adjacent to each other in the light source assembly of the present invention.
  • 2B is a schematic view showing the layer structure of a carrier, an LED chip, and a reflective film in the light source assembly.
  • FIG 3 is a schematic structural view of a first conductive layer and a second conductive layer formed on a carrier in the light source assembly.
  • FIG. 4A is a schematic plan view showing the structure of the first conductive layer shown in FIG.
  • Fig. 4B is an enlarged schematic view showing a portion C in Fig. 4A.
  • FIG. 4C is a schematic structural view of the pad pattern disposed in the same row of FIG. 4B corresponding to the soldered LED chip.
  • Figure 5 is a schematic plan view of a second conductive layer in the present invention.
  • Figure 6A is a plan view showing a modified embodiment of the first conductive layer shown in Figure 3.
  • Figure 6B is a schematic illustration of a simplified circuit connection of the first conductive layer shown in Figure 6A.
  • Fig. 6C is an enlarged schematic view showing a portion D in Fig. 6A.
  • Figure 7A is a schematic view showing the layer structure of the first embodiment of the light source assembly shown in Figure 1.
  • Fig. 7B is an enlarged schematic view of the portion E in Fig. 7A.
  • Fig. 8A is a schematic view showing the layer structure of the second embodiment of the light source assembly shown.
  • FIG. 8B is a schematic diagram showing the layer structure of the light-shielding layer as a microlens layer in the light source assembly.
  • Fig. 9A is a schematic view showing the structure of a white side in the light source unit.
  • Fig. 9B is an enlarged schematic view of the portion F shown in Fig. 9A.
  • Fig. 10A is a schematic view showing the layer structure of a carrier of a light source unit according to a second embodiment of the present invention.
  • FIG. 10B is a schematic structural view of a column of pad patterns shown in FIG. 10A after soldering a plurality of LED chips.
  • FIG. 10B is a schematic structural view of a column of pad patterns shown in FIG. 10A after soldering a plurality of LED chips.
  • FIG. 10C is a schematic diagram showing the layer structure of a light source assembly according to a second embodiment of the present invention.
  • Fig. 10D is a schematic view showing the layer structure of a single land pattern.
  • FIG. 11A is a schematic diagram showing the layer structure of a display device according to a third embodiment of the present invention.
  • 11B is a schematic block diagram of a driving component and a power supply component of a display device according to a third embodiment of the present invention.
  • FIG. 12 is a schematic structural diagram of an electronic device according to a fourth embodiment of the present invention.
  • FIG. 13 is a schematic structural view of the electronic device of FIG. 12 in a state in which the light source assembly is in a bent state.
  • FIG. 14A is a schematic perspective structural view of a display device according to a fifth embodiment of the present invention.
  • Fig. 14B is a schematic view showing the layer structure of the above-mentioned microlens layer provided in the fluorescent layer of Fig. 14A.
  • FIG. 14C is a schematic structural view of a pixel in the display device of FIG. 14A.
  • 14D is a schematic structural view of a specific embodiment of the display device.
  • FIG. 15 is a schematic structural diagram of a wearing device according to a sixth embodiment of the present invention.
  • 16 is a schematic flow chart of a method of fabricating a light source assembly according to a seventh embodiment of the present invention.
  • FIG. 17 is a schematic flow chart of the specific steps of step V101 in FIG. 16.
  • FIG. 18 is a schematic flow chart showing the specific steps of step V105 in FIG. 16.
  • Fig. 19 is a view showing the structural change of the primary hot pressing and the secondary hot pressing of the fluorescent film shown in Fig. 18.
  • FIG. 20 is a schematic flow chart of a method of fabricating a light source assembly according to an eighth embodiment of the present invention.
  • a first embodiment of the present invention provides a light source assembly 10, wherein the light source assembly 10 includes a carrier 11 and a plurality of LED chips 12 uniformly disposed on the carrier 11.
  • the light source assembly 10 further includes a uniform In the optical layer 11, the same light-homogenizing layer 13 is disposed on the plurality of LED chips 12.
  • the light emitted by the LED chip 12 directly enters the light-homogenizing layer 13 to be scattered, thereby forming a continuous and uniform light-emitting surface.
  • the area of the light-emitting surface is equal to the area of the side of the light-homogenizing layer 13 away from the LED chip; the ratio of the area of the light-emitting surface to the side of the carrier 11 carrying the LED chip 12 is 1: (0.9-1.1) Further, the ratio of the area of the light emitting surface to the side of the carrier 11 carrying the LED chip 12 is 1:1.
  • the light-homogenizing layer 13 covers the entire carrier 11, and more preferably, the light-homogenizing layer 13 is identical in area to the carrier 11, that is, the periphery of the carrier 11 coincides with the periphery of the light-homogenizing layer 13.
  • 1-13 LED chips 12 may be disposed under each square millimeter corresponding to the light-homogenizing layer 13.
  • the "upper” and “lower” orientations of the present invention and the following description of the present invention are not intended to limit the scope of the invention. More preferably, 1-5, 5-9 or 8-15 LED chips 12 may be disposed under each square millimeter corresponding to the light-homogenizing layer 13, specifically, each square millimeter corresponding to the light-homogenizing layer 13 Specifically, 13, 12, 11, 10, 9, 8, 7, 5, 3, 2 or 1 can be set.
  • the shape of the LED chip 12 may be a strip shape, a circle shape, a square shape, or the like.
  • the length of the LED chip 12 is 0.01-1 mm, and the width of the LED chip is 0.01-0.5 mm.
  • the length of the LED chip 12 is 0.01 mm, 0.015 mm, 0.127 mm, 0.2 mm, 0.34 mm, 0.51 mm, 0.6 mm, 0.9 mm, 0.97 mm or 1 mm.
  • the LED chip 12 has a width of 0.01 mm, 0.015 mm, 0.127 mm, 0.2 mm, 0.34 mm, or 0.5 mm.
  • the length of the LED chip 12 is preferably 0.228 mm, and the width of the LED chip 12 is preferably 0.127 mm.
  • the LED chip 12 When the LED chip 12 is circular, the LED chip 12 has a diameter of 0.01 mm to 0.75 mm. More preferably, the diameter of the LED chip may further be 0.01 mm-0.01 mm, 0.01 mm-0.03 mm, 0.03 mm-0.07 mm, 0.07 mm-0.12 mm, 0.11 mm-0.2 mm, 0.2 mm-0.5 mm or 0.55. Mm-0.75mm.
  • the specific address, the maximum size of the LED chip is 0.006mm, 0.08mm, 0.01mm, 0.013mm, 0.03mm, 0.05mm, 0.07mm, 0.091mm, 0.1mm, 0.11mm, 0.15mm, 0.18mm, 0.31mm, 0.45 mm, 0.56 mm or 0.75 mm.
  • the LED chip 12 in the elongated light source assembly 10, in order to provide the light source assembly 10 with a superior light-emitting effect, the LED chip 12 is generally elongated to obtain a larger light-emitting surface. Further, when the long side of the LED chip 12 corresponds to the long side of the light source assembly 10, the short side of the LED chip 12 corresponds to the short side of the light source assembly 10.
  • the single LED chip 12 has five light-emitting surfaces, and the light-emitting angle is preferably 140 ° C - 150 ° C. .
  • the thickness of the LED chip 12 is from 0.01 mm to 0.5 mm, and more preferably, the thickness of the LED chip 12 is 0.01 mm, 0.0254 mm, 0.03 mm or 0.5 mm.
  • the spacing between adjacently disposed LED chips 12 can be further defined. 1 and 2, the spacing e between two adjacent LED chips 12 disposed adjacently is 0.01 mm to 0.75 mm.
  • the spacing e between two adjacent LED chips 12 may also be 0.01mm-0.025mm, 0.025mm-0.0.037mm, 0.037mm-0.052mm, 0.052mm-0.09mm, 0.09mm. -0.14 mm, 0.14 mm - 0.31 mm or 0.31 mm - 0.75 mm.
  • the pitch e may also preferably be any one of 0.01 mm, 0.07 mm, 0.08 mm, 0.19 mm, 0.251 mm, 0.31 mm, or 0.75 mm. Further, in order to obtain a better illuminating effect, in some embodiments of the embodiment, the plurality of LED chips 12 are equally spaced. In the present invention, the arrangement of the pitch can effectively improve the uniformity of illumination of the light source assembly 10.
  • the carrier 11 and the light-homogenizing layer may be A reflective layer 17 is disposed between the 13 and the reflective layer 17 is disposed on a side of the carrier 11 on which the LED chip is disposed.
  • the reflective layer 17 is provided with a window 171 matching the number and position of the LED chips 12.
  • the LED chip 12 is exposed, and the LED chip is provided with reflection, so as to reduce the use of the LED chip 12, and also obtain a better uniform light effect and light emission brightness.
  • the reflective layer 17 may be an aluminum foil reflective film or a silver reflective film.
  • the thickness of the reflective layer 17 is not limited. After the reflective layer 17 is added, the light efficiency of the light source assembly 10 can be increased by 1-30% on the original basis.
  • the reflective layer 17 and the carrier 11 and the light-homogenizing layer 13 may be bonded.
  • Layer (not shown).
  • the light effect of the light source unit 10 can be further improved on the basis of the number and arrangement of the same LED chips 12.
  • the material of the carrier 11 may be a metal such as copper or aluminum and an alloy carrier thereof, such as stainless steel, brass, etc.; or a flexible plastic carrier such as epoxy glass fiber reinforced plastic, polyetheretherketone, Polyimide, polycarbonate polycarbonate, polyethylene terephthalate, polyethylene succinate, polymethyl methacrylate, polyvinyl chloride, polypropylene, polycarbonate, poly Materials such as aryl ester, polyether sulfone, polyethylene naphthalate, and any combination thereof.
  • a metal such as copper or aluminum and an alloy carrier thereof, such as stainless steel, brass, etc.
  • a flexible plastic carrier such as epoxy glass fiber reinforced plastic, polyetheretherketone, Polyimide, polycarbonate polycarbonate, polyethylene terephthalate, polyethylene succinate, polymethyl methacrylate, polyvinyl chloride, polypropylene, polycarbonate, poly Materials such as aryl ester, polyether sulfone, polyethylene naphthalate, and any combination thereof.
  • the carrier 11 may be a single layer structure or a two-layer structure.
  • the carrier 11 is preferably formed by press-bonding a two-layer film, and the main surfaces of the two films are respectively formed.
  • the carrier 11 adopts a two-layer structure, in particular, a two-layer film is pressed, which can further reduce the thickness of the carrier 11, and further, by forming the required conductive lines on the two films respectively. After that, the film is pressed together, and the thickness of the carrier 11 can be ensured, and the soldering of the LED chip can be further ensured and the stability of the circuit connection can be further ensured.
  • the LED chip is directly soldered on the FPC.
  • the carrier 11 has a thickness of 0.01 mm to 0.4 mm, preferably The thickness F of the carrier 11 is from 0.06 mm to 0.5 mm.
  • the carrier 11 may have a thickness of 0.06 mm to 0.09 mm, 0.09 mm to 0.2 mm, 0.19 mm to 0.2 mm, 0.1 mm to 0.3 mm, and 0.29 mm to 0.4 mm, and further, the carrier 11
  • the thickness F may specifically be 0.06 mm, 0.07 mm, 0.09 mm, 0.17 mm, 0.2 mm, 0.21 mm, 0.29 mm or 0.4 mm.
  • the surface light source having a continuous light emitting surface is arbitrarily divided into four regions and five regions. It can be understood that two regions, three regions, six regions, and the like can be divided, and the average luminous intensity between the regions is mutually. In some preferred embodiments of the invention, the ratio of the luminous intensities between any two of the surface light sources having the continuous illuminating surface is further 1:1.
  • the light emitted by the light source assembly 10 provided in this embodiment has higher light efficiency and higher light utilization efficiency, and the luminous intensity is higher than the existing direct-type surface light source and side-emitting surface light source. More uniform.
  • one side of the carrier 11 on which the LED chip 12 is disposed is the first surface 1101 of the carrier 11, and a surface on which the first surface 1101 is oppositely disposed is defined as the second surface. 1102.
  • a first conductive layer 14 is formed on the first surface 1101 of the carrier 11, and a second conductive layer 15 is formed on the first surface 1102 of the carrier 11, wherein the first conductive layer 14 and the second conductive layer
  • the electric layer 15 may be formed by etching or electroplating on the corresponding surface of the carrier 11, or may be formed by lamination, which is not limited herein.
  • the first conductive layer 14 includes a plurality of land pattern groups 140 and a plurality of sets of wires 149 connecting the portions of the land pattern groups 140, wherein, preferably, a plurality of land pattern groups 140
  • the plurality of sets of wires 149 are coplanar. And a plurality of sets of wires 149 are arranged in parallel.
  • Each of the sets of wires 149 includes a plurality of first wires 142 and a second wire 143, wherein the plurality of first wires 142 are disposed along a same straight line, and the plurality of first wires 142 and a second wire 143 are parallel. Settings.
  • a plurality of sets of land pattern groups 140 are disposed in parallel between the first wire 142 and the second wire 143. Referring to FIG. 4B and FIG. 4C, each set of land pattern groups 140 is composed of at least three land patterns 141 spaced apart along the same straight line. Preferably, the adjacently disposed land patterns 141 are equally spaced. distributed.
  • the area of the land pattern 141 is (0.01-0.1) mm*(0.01-0.1) mm, and the area of the land pattern 141 may be specifically 0.05 mm*0.05 mm or 0.1 mm*0.1. Mm.
  • the plurality of land patterns 141 are arranged in a row or array arrangement.
  • the positive and negative electrodes of one LED chip 12 may be respectively soldered on two adjacently disposed two land patterns 141, wherein the width of the LED chip 12 is larger than any of the above.
  • the width of the land pattern 141, the orthographic projection area of the LED chip 12 is greater than or equal to the area occupied by the two land patterns corresponding to the LED chip.
  • the first wire 142 or the second wire 143 is connected to a portion of the land pattern 141.
  • four pad patterns 141 are equally spaced between the first wire 142 and the second wire 143, and an LED chip 12 is soldered between the adjacent two adjacent pad patterns 141.
  • a series circuit that is electrically connected from the positive electrode to the negative electrode is formed together with the land pattern 141.
  • the reflective layer 17 may be specifically disposed on the pad pattern 141, the window 171 disposed on the reflective layer 17, and the LED chip 12 may be disposed in the window 171. Inside.
  • the first wire 142 divides the land pattern 141 into a plurality of LED chip regions, and the second wires 143 connect the plurality of LED chip regions in series or in parallel. Electrical connection. Specifically, after the LED chip 12 is soldered to the pad pattern 141 by solder paste, the first wire 141 further divides the LED chip 12 into a plurality of LED chip regions; the second wire 143 will be more The LED chip regions are electrically connected in series or in parallel, thereby achieving district electrical control of the LED chip 12.
  • the manner of distinguishing is as shown in FIG. 4A and FIG. 4B.
  • the first wire 142 is simultaneously connected with 11 sets of welding pattern groups 140, and each of the welding pattern groups 140 includes four welding patterns 141 equally spaced in the Y direction.
  • one LED chip 12 is correspondingly soldered between two adjacent solder patterns 141. It can be seen that 33 LED chips 12 can be included in the area of the LED chip separated by the first wire 142. Among them, the LED chips 12 arranged in the Y direction are connected in series, and the LED chips 12 arranged in the X direction are connected in parallel.
  • the circuit connection relationship of the pad pattern 141 connected to the first wire 142 and the second wire 143 is such that one end of the pad pattern 141 is connected to the first wire 142 and the other end is connected to the positive electrode of the LED chip 12; one end of the land pattern 141 The second wire 143 is connected, and the other end is connected to the negative electrode of the LED chip 12.
  • the pitch between the two land patterns 141 for soldering the same LED chip is H1 of 0.01 mm to 1 mm, and preferably, the pitch H1 may further be 0.01 mm. -0.1 mm, 0.01 mm-0.5 mm, 0.1-0.6 mm, 0.2-0.9 mm or 0.8-1 mm, and the like.
  • the spacing H1 may be 0.01 mm, 0.025 mm, 0.04 mm, 0.1 mm, 0.3 mm, 0.5 mm, 0.9 mm or 1 mm.
  • the line width of the first wire 142 and the second wire 143 may be further limited to 0.01 mm to 0.5 mm, and the first wire disposed adjacent to each other.
  • the line spacing between 142 and the second wire 143 is from 0.01 mm to 1 mm.
  • the line width of the first wire 142 and the second wire 143 may further be 0.01 mm-0.05 mm, 0.05 mm-0.12 mm, 0.16 mm-0.3 mm, 0.25 mm-0.4 mm, or 0.4 mm-0.5 mm.
  • the line width may be specifically 0.01 mm, 0.03 mm, 0.05 mm, 0.09 mm, 0.12 mm, 0.16 mm, 0.19 mm, 0.25 mm, 0.4 mm or 0.5 mm.
  • the line spacing between the adjacent first wire 142 and the second wire 143 may be 0.01 mm - 0.05 mm, 0.05 mm - 0.08 mm, 0.16 mm - 0.3 mm, 0.25 mm - 0.8 mm or 0.8 mm - 1 mm.
  • the line pitch may be specifically 0.01 mm, 0.03 mm, 0.15 mm, 0.59 mm, 0.67 mm, 0.76 mm, 0.89 mm, 0.95 mm or 1 mm.
  • the second conductive layer 15 further includes a plurality of pins 151 connected to the external circuit, and a guide extending from the lead 151.
  • the electrical pattern 152 is disposed in a coplanar manner between the conductive pattern 152 and the pin 151. That is, the pin 151 is disposed on a side covered by the non-uniform layer, and an electrical connection can be made between the pin 151 and the LED chip.
  • the specific shape of the conductive pattern 152 is not limited.
  • the number of the pins 151 coincides with the number of partitions of the LED chip area described above.
  • the pins 151 are more preferably arranged on the same side of the carrier. Such an arrangement can simplify the circuit connection relationship of the light source assembly 10, thereby making the light source assembly 10 more thin and light. Chemical.
  • the pin 151 can be further divided into a positive pin (not labeled) and a negative pin (not labeled), wherein the distribution of the positive and negative pins and the specific number thereof are related to the electrical connection relationship of the LED chip 12.
  • the positive pin can be set at the extreme edge or the positive pin can be disposed between the plurality of negative pins.
  • the conductive pattern 152 and the first wire 142 or the second wire 143 can be electrically connected through the conductive via 16 penetrating the carrier 11 .
  • the conductive via 16 may be formed by filling a via hole penetrating the carrier 11 with a conductive material. The specific number and position of the conductive vias 16 are determined according to the circuit connection relationship of the light source assembly 10.
  • the conductive vias 16 are disposed such that the conductive lines of the one surface pad pattern 141 of the LED chip 12 are disposed on a side opposite to the LED chip 12, so that all conductive lines in the light source assembly 10 can be realized.
  • the light-homogenizing layer 13 can further support the display of the borderless or narrow-frame light source. Further, the pad pattern 141, the first conductive line 142, the second conductive line 143, the lead 151, and the conductive pattern 152 are all disposed within the orthographic projection area of the fluorescent layer 131.
  • the number and location of the conductive vias 16 are not limited, and only the control region can be normally powered on. Time division and partition driving of the LED chip 12 can be further realized by performing partition control on the LED chip 12.
  • the pin 151 can be electrically connected to the corresponding circuit region via the conductive pattern 152 and the conductive via 16 in sequence.
  • the conductive pattern 152 may be a metal layer directly formed on the carrier 12, the metal layer forming a plurality of regions by etching.
  • An insulating layer is further disposed on the metal layer to avoid mutual interference between the different conductive patterns 152.
  • the arrangement of the metal layer can also provide heat dissipation for the heat generated by the LED chip 12 during operation, thereby avoiding excessive temperature due to simultaneous illumination of the plurality of LED chips 12, thereby extending the The service life of the LED chip 12 is described.
  • the plurality of pins 151 may further include an A1 terminal and a K1-Kn terminal.
  • the K1 terminal-Kn terminal respectively corresponds to a driving partition of the plurality of LED chips 12.
  • the LED chip 12 can be divided into 32 regions, corresponding to the K1 terminal-K32 terminal.
  • the A1 end and the K1 end - K32 end are connected by an external circuit, thereby realizing the partition control of the light source assembly 10.
  • a set of wires 249 is composed of a plurality of first wires 242 , a plurality of second wires 243 , and a plurality of connecting wires
  • the bus 244 of the second wire 243 is composed of, wherein, as shown in FIG. 5B, the first wire 242 and the second wire 243 are both comb-shaped, and the first wire 242 and the second wire 243 are staggered.
  • the same LED chip 22 is correspondingly soldered on two adjacent differently disposed pad patterns 241, one of which is connected to the first wire 242 and electrically connected, and the other of the land patterns 241 and the second wire 243 Connected and electrically conductive.
  • the circuit connection relationship of the pad pattern 241 connected to the first wire 242 and the second wire 243 is such that one end of the land pattern 241 is connected to the first wire 242, and the other end is connected to the positive electrode of the LED chip 22; one end of the land pattern 241 The second wire 243 is connected, and the other end is connected to the negative electrode of the LED chip 22.
  • the two different pad patterns 241 corresponding to the same LED chip 22 are positioned to locate a set of the pad pattern groups 240, and the comb wires on the parallel between the first wires 242 and the second wires 243 are disposed.
  • a plurality of sets of land pattern groups 240 are arranged side by side, wherein the plurality of sets of land pattern groups 240 are spaced apart along the same straight line. Wherein, as shown in FIG. 6C, four sets of land pattern groups 24 are disposed in parallel between the comb shape of the first wire 242 and the second wire 243.
  • the conductive via 26 may be disposed on the first wire 242 or the second wire 243.
  • 16 parallel LED chips may be formed into one control region, and at least one conductive via 104 connected to the positive electrode 151 is disposed on the first wire 142, and the second wire 143 is disposed on the first wire 142. At least one conductive via 104 connected to the negative lead 152 is disposed thereon.
  • the number and location of the conductive vias 104 are not limited, and only the control region can be normally powered on.
  • the LED chip can be further realized by performing partition control on the LED chip 12 12 time division and partition drive.
  • the material forming the first conductive layer 14 and the second conductive layer 15 may be copper, aluminum, gold, silver, nickel, zinc, iron, graphite material, or a transparent conductive oxide.
  • the LED chip 12 Before soldering the LED chip 12 on the land pattern 141, it is also required to perform stencil printing on the first conductive layer for the purpose of uniformly printing a solder paste on the corresponding land pattern 141. Then, the positive and negative electrodes of the LED chip are cured on the solder paste by different reflow soldering processes.
  • a nano-scale steel mesh is selected for printing, and the solder paste is used.
  • the particle size can be as low as 30 ⁇ m or less.
  • the above arrangement is advantageous in that, on the surface on which the LED chip 12 needs to be disposed, the distance between the adjacently disposed pad patterns 241 can be reduced by designing the land pattern, correspondingly, the LED The size of the chip 12 can be further reduced, and the number of the LED chips 12 provided per unit area is correspondingly increased.
  • the light-homogenizing layer 13 may be a fluorescent layer 131, and the fluorescent layer 131 covers all the LED chips 12, and fills two adjacently disposed ones.
  • the fluorescent layer 131 of the present invention and the following is integrally formed by specifically covering the fluorescent layer 12 in a solid state on the LED chip 12 and the carrier 11; and thermally pressing the fluorescent layer 12 to The fluorescent layer 12 softens and forms the fluorescent layer 131, and a plurality of the LED chips 12 are encapsulated within the fluorescent layer 131, that is, a desired fluorescent layer 131 is obtained.
  • the phosphor layer 12 is subjected to a secondary hot pressing operation.
  • the fluorescent layer 12 is softened and adhered to the carrier 11 and the surface of the LED chip 12 fixed to the carrier 11, and the fluorescent layer 131 is also provided between adjacent LED chips 12.
  • Such an arrangement allows the light emitted from the LED chip 12 to cooperate with the light generated by the phosphor in the fluorescent layer 131 to obtain a uniform light-emitting effect.
  • a plurality of the LED chips 12 are regularly fixed to the surface 1201 of the carrier 12.
  • the phosphor layer 131 is shape-matched with the carrier 12 in a superimposed direction and integrally formed on the surface of the carrier 12 to which the LED chip 12 is fixed, so that the LED chip 12 is encapsulated in the fluorescent layer 131 to form a planar type. light source.
  • the fluorescent layer 131 is identical in area to the carrier 11.
  • the light emitted by the light source assembly 10 provided in this embodiment has higher light efficiency and higher light utilization efficiency, and the brightness is more bright. Uniform.
  • the distance h1 of the light-emitting main surface 1201 of the LED chip 12 from the main light-emitting surface 1311 of the fluorescent layer 131 is the minimum thickness h1 of the fluorescent layer 131.
  • the distance from the surface 1101 of the LED chip 12 to the main light-emitting surface 1311 of the fluorescent layer 131 is set to be the maximum thickness h2 of the fluorescent layer 131.
  • the minimum thickness h1 of the fluorescent layer 131 covering the LED chip 12 is 0.003 mm-0.191 mm
  • the maximum thickness h2 of the fluorescent layer 131 is 0.004 mm-0.2 mm. .
  • the thickness of the fluorescent layer 131 is adjusted according to the requirement of the luminous intensity of the light source assembly 10.
  • the minimum thickness h1 of the fluorescent layer 131 may also be 0.08-0.12.
  • the maximum thickness h2 of the fluorescent layer 131 may be 0.15-0.3 mm.
  • the minimum thickness h1 of the fluorescent layer 131 may be 0.003 mm, 0.006 mm, 0.009 mm, 0.01 mm, 0.03 mm, 0.035 mm, 0.05 mm, 0.07 mm. 0.10 mm, 0.12 mm, 0.15 mm or 0.191 mm; the maximum thickness h2 of the fluorescent layer 131 may be specifically 0.004 mm, 0.006 mm, 0.01 mm, 0.03 mm, 0.07 mm, 0.09 mm, 0.1 mm, 0.11 mm, 0.13 Mm, 0.15mm, 0.17mm, 0.19mm or 0.2mm,
  • the minimum thickness h1 of the phosphor layer 131 needs to be between the adjacently disposed LED chips 12.
  • the spacing is positively correlated.
  • the spacing e between the two LED chips 12 disposed correspondingly is 0.1 mm to 1 mm
  • the corresponding minimum thickness h2 of the fluorescent layer 131 is 0.1 mm to 0.2 mm.
  • the spacing e between the two LED chips 12 disposed correspondingly is 0.01-0.1 mm
  • the corresponding minimum thickness h2 of the fluorescent layer 131 is further 0.01-0.05 mm.
  • the maximum thickness h2 of the fluorescent layer 131 should be at least greater than the thickness of the LED chip 12.
  • the fluorescent layer 131 The distance between any edge of the LED chip 12 closest to the edge and the edge is 0.002 mm - 0.1 mm, and preferably, the distance may further be 0.002 mm - 0.001 mm, 0.001 mm - 0.004 mm, 0.004-0.006 mm, 0.007-0.01 mm, 0.01-0.03 mm or 0.03-0.1 mm.
  • the ratio between the length of the LED chip 12 and the above distance needs to satisfy a certain ratio range.
  • the fluorescent layer 12 includes a phosphor composition, a colloid, and a diffusion particle.
  • the LED chip 12 is a blue chip or a near ultraviolet chip.
  • the phosphor composition may include, but is not limited to, red phosphor: one or more of nitrogen oxides, fluorides, nitrides, etc.; green phosphor: one of sialon, silicate, etc. One or more; yellow powder: one or more of yttrium aluminum garnet, silicate, etc.; blue powder: one or more of barium aluminate, aluminate, and the like.
  • the colloid may include, but is not limited to, organic silica gel and inorganic silica gel, wherein the organic silica gel comprises: one or a mixture of silicone rubber, silicone resin and silicone oil, and the inorganic silica gel comprises B type silica gel and coarse pore silica gel. And a mixture of one or more of the fine pore silica gel.
  • the diffusion particles are one or a combination of silica, silicone, acrylic or calcium carbonate, wherein the diffusion particles have a particle diameter of 7 to 20 ⁇ m.
  • the particle size and the number of the diffusion particles have a better effect on the deflection and diffusion of the fluorescent layer 131 to the light source, and at the same time, the smoothness and the light transmittance thereof can be improved. More preferably, in order to obtain a better light mixing effect, the diffusion particles may be combined with at least two particles having different refractive indices.
  • the quality of the phosphor composition accounts for 30%-50% of the total mass of the fluorescent glue composition and the colloid.
  • the phosphor composition includes a yellow phosphor, that is, the phosphor composition includes one or a mixture of two of yttrium aluminum garnet, silicate, and the like.
  • the LED chip 12 is preferably a blue chip. In the fluorescent layer 131, the LED chip 12 emits blue light and excites yellow powder in the phosphor composition to emit yellow light. In the light source assembly 10, the light emitted by the LED chip 12 and the light emitted by the excitation of the phosphor are diffused in the fluorescent layer 131 to form white light of uniform brightness.
  • the phosphor composition may further include a combination of a red phosphor and a green phosphor, that is, the red phosphor in the phosphor composition may include nitrogen oxides, One or more of fluoride, nitride, and the like, and the green phosphor include one or more of sialon, silicate, and the like, and the LED chip 12 is further preferably a blue chip.
  • the phosphor layer composition includes a combination of a red phosphor, a green phosphor, and a yellow phosphor
  • the red phosphor includes nitrogen oxides, fluorides, and nitrides.
  • the green phosphor comprises a combination of one or more of a halosilicate, a sulfide, a silicate, and an oxynitride
  • a yellow phosphor yttrium aluminum garnet,
  • the LED chip 12 is further preferably a blue chip.
  • the red phosphor is one or a combination of potassium fluorosilicate and potassium fluoroantimonate, and the green phosphor is sialon; the yellow phosphor is strontium silicate, magnesium silicate and silicic acid.
  • the red phosphor is one or a combination of potassium fluorosilicate and potassium fluoroantimonate
  • the green phosphor is sialon
  • the yellow phosphor is strontium silicate, magnesium silicate and silicic acid.
  • the red phosphor is one or a combination of potassium fluorosilicate and potassium fluoroantimonate
  • the green phosphor is sialon
  • the yellow phosphor is strontium silicate, magnesium silicate and silicic acid.
  • the phosphor layer composition includes a red phosphor, a green phosphor, and a yellow phosphor in a mass ratio of (1 to 4): (0.5 to 2): (0.5 to 2).
  • the mass ratio of the red phosphor, the green phosphor, and the yellow phosphor is (1 to 3): (0.5 to 1.5): (0.5 to 1.5).
  • the red phosphor is potassium fluoroantimonate
  • the yellow phosphor is silicate
  • the green phosphor is sialon.
  • the mass of the red phosphor, the green phosphor, and the yellow phosphor may be 64%, 16%, and 20%, respectively, of the total mass of the phosphor. It is also possible that the mass of the red phosphor, the green phosphor and the yellow phosphor account for 58.4%, 17.2%, and 24.4%, respectively, of the total mass of the phosphor. It is also possible that the mass of the red phosphor, the green phosphor and the yellow phosphor account for 68%, 14%, and 18%, respectively, of the total mass of the phosphor. It is also possible that the mass of the red phosphor, the green phosphor and the yellow phosphor account for 52%, 22%, and 26%, respectively, of the total mass of the phosphor.
  • the red phosphor, the green phosphor and the yellow phosphor account for 60%, 18% and 22% of the total phosphor powder, respectively.
  • the red phosphor is potassium fluorosilicate
  • the yellow phosphor is yttrium aluminum garnet
  • the green phosphor is sialon. It may be that the mass of the red phosphor, the green phosphor and the yellow phosphor respectively occupies the phosphor The total mass was 61.2%, 19.4%, and 19.4%. It is also possible that the mass of the red phosphor, the green phosphor and the yellow phosphor account for 58%, 21%, and 21%, respectively, of the total mass of the phosphor.
  • the mass of the red phosphor, the green phosphor and the yellow phosphor account for 55%, 23%, and 22%, respectively, of the total mass of the phosphor. It is also possible that the mass of the red phosphor, the green phosphor and the yellow phosphor account for 67%, 17%, and 16%, respectively, of the total mass of the phosphor.
  • the red phosphor, the green phosphor and the yellow phosphor account for 60%, 20% and 20% of the total phosphor powder, respectively.
  • the light-homogenizing layer 13 may be an optical film 132, and the optical film 131 may be one or more of a diffusion film or a brightness enhancement film.
  • the difference between the specific embodiment and the prior art is that the LED chip 12 is directly attached to the optical film 131 without gaps, so that the overall thickness of the light source assembly 10 can be further reduced.
  • the light concentrating layer 13 may further be a microlens layer 133, and the microlens layer 133 is provided with a plurality of micros corresponding to the LED chip 12.
  • Lens 1331 The light emitted by the LED chip 12 enters the microlens 1331 to achieve optical refraction and reflection, thereby obtaining a uniform light effect.
  • the thickness of the microlens layer 133 and the size and distribution of the individual microlenses 1331 are related to the distribution of the LED chips 12.
  • the light-homogenizing layer 13 is a combination of the fluorescent layer 131 and the optical film 132.
  • the implementation manner may be: the fluorescent layer 131 directly covers all the LED chips 12 and fills the LED chip. The gap between the 12, the optical film 132 is disposed directly above the phosphor layer 131.
  • the optical film 13 can be directly attached to the LED chip 12, and then formed on the side of the optical film 13 away from the LED chip 12.
  • the fluorescent layer 131 can be directly attached to the LED chip 12, and then formed on the side of the optical film 13 away from the LED chip 12.
  • the microlens 133 may be directly attached over the fluorescent layer 131 covering the LED chip 12, so that the uniformity of light emitted by the light source assembly 10 may be further enhanced.
  • the combination of the specific layer structures in the light-homogenizing layer 13 can be adjusted according to the lighting effect required by the light source assembly 10 and the specific distribution pattern of the LED chip 12, and different combinations can be achieved. Glowing effect.
  • the light source assembly 10 may have a thickness of 0.06 mm to 1 mm.
  • the thickness of the light source assembly 10 is 0.06 mm-0.1 mm, 0.1 mm-0.5 mm, 0.2 mm-0.8 mm or 0.8-1 mm, and the thickness of the light source assembly 10 is specifically 0.06 mm, 0.1 mm, 0.127 mm. , 0.254 mm, 0.35 mm, 0.5 mm, 0.8 mm or 1 mm.
  • the light source assembly 11 further includes a white side 301 formed on the carrier 11 and disposed around the fluorescent layer 131.
  • the periphery of the white side 301 coincides with the area of the carrier 11.
  • the white edge 301 is formed on the side surface of the fluorescent layer 131 by coating or coating after the fluorescent layer 131 is formed, and the white is formed by cutting.
  • the edge 301 can have a relatively thin thickness while reflecting the side surface of the fluorescent layer 131, so as to realize the edge of the light emitting surface of the fluorescent layer 131 in the light source assembly 10 and the carrier 11 is provided with the LED chip 12.
  • the edges of one side are basically the same.
  • the LED chip 12 excites the light emitted from the phosphor layer 131 to the side surface, is reflected by the white side 301, and is emitted at an angle through the light emitting surface 1101 of the fluorescent layer 111. That is, in the present invention, the white edge 301 can be used to reflect the light emitted by the LED chip 12 toward the side surface and emit the light source assembly 10 at an angle through the light emitting surface 1101 of the fluorescent layer 131. Effective use of light sources.
  • the white side 301 has a thickness of 0.001 mm to 0.1 mm, and further, the white side 301 may have a thickness of 0.001 mm to 0.01 mm, 0.002 mm to 0.008 mm, or 0.01 mm to 0.09 mm. In some specific embodiments of the present invention, the thickness of the white side 301 may be specifically 0.001 mm, 0.002 mm, 0.05 mm, 0.1 mm, or the like. The above is by way of example only and not as a limitation of the invention.
  • a second embodiment of the present invention provides another light source assembly 40.
  • the light source assembly 40 includes a carrier 41 and a plurality of LED chips 42.
  • the carrier 41 includes two layers of film layers 411 stacked in two.
  • a conductive layer 412 is disposed between the film layers 411.
  • the conductive layer 412 includes a plurality of land patterns 413.
  • the land patterns 413 are electrically connected by wires 414.
  • One of the film layers 411 is opened for corresponding soldering.
  • the positive and negative electrodes of the LED chip 42 are respectively fixed on different pad patterns 413 by solder paste soldering; the light source assembly 40 further includes a fluorescent layer 43 and the same The fluorescent layer 43 fills the gap between the LED chips 42 and covers all of the LED chips 42.
  • the film layer 411 may preferably be a flexible material, and the material of the film layer 411 may include, but is not limited to, polyimide, polyethylene terephthalate, aramid fiber ester or polyvinyl chloride. Any of them.
  • a reflective layer 415 can be covered, the reflective layer 415 being disposed at a non-window of the film layer.
  • a single of the pad patterns 413 may specifically include a copper foil layer 4131 and a silver plating layer 4132 disposed on the copper foil layer 4131.
  • the copper foil layer 4131 may function as a conductive layer.
  • the LED chip 42 soldered on the land pattern 413 is electrically connected to the wire 414.
  • the arrangement of the silver plating layer 4132 can further improve the light-emitting effect of the light emitted by the LED chip 42 by the land pattern 413, thereby enhancing the light effect of the light source assembly 40.
  • the reflective layer 415 is a combination of one or more of a white oil layer, an aluminum foil reflective film layer, or a silver reflective film layer.
  • the light source assembly 40 further includes a lead 417 connected to the peripheral circuit, and the lead 417 is disposed in the same layer as the conductive layer 412 or stacked on the conductive layer 412 . Since the film layer 411 is a flexible foldable material, it can be folded into the orthographic projection area of the conductive layer 412 to open the window 419, so that the light-emitting area of the light source assembly 40 can be The overall area of the carrier 41 is uniform.
  • the LED chips 42 may be arranged in an array, and the spacing between two adjacent LED chips 42 is 0.01 mm - 1 mm. .
  • the light source assembly 40 and the single LED chip 42 are both rectangular, and the long side of the light source assembly 40 is disposed in parallel with the long side of the LED chip 42 .
  • the short side is disposed in parallel with the short side of the LED chip 42; the length of the LED chip 42 is 0.01 mm to 1 mm, and the width of the LED chip 42 is 0.01 mm to 0.5 mm.
  • the specific parameters of the length, the width, and the distribution interval of the LED chip 42 are the same as those in the first embodiment, and are not described here.
  • a third embodiment of the present invention provides a display device 100.
  • the display device 100 includes a light source assembly 10 having a continuous light emitting surface and a display assembly 110.
  • the light emitting surface of the light source assembly 10 and the display The assembly 110 has no gap fit.
  • one side of the phosphor layer 131 away from the carrier 11 is the light emitting surface of the light source assembly 10.
  • the light emitting surface of the fluorescent layer 131 is adhered to the display assembly 110 without a gap.
  • the edge of the carrier is flush with the edge of the display assembly.
  • the area of the fluorescent layer 131 is identical to the area of the carrier 11.
  • the display device 100 further includes a power supply component 192 and a driving component 191, and the driving component 191 can be used to provide a control signal to the light source component 10 to implement the light source component 10
  • the area is illuminated; the power supply assembly 192 is used to provide electrical energy source drive for the light source assembly 10, the drive assembly 191 can also control the activation or shutdown of the power supply assembly 192, and can further control the output power of the power supply assembly 192.
  • the driving component 191 is connected to a pin (151 or 417) to perform partition driving control on the LED chip.
  • control component 192 drives a plurality of the LED chips 12 in the light source assembly 10 in a dynamic backlight driving mode.
  • the display component 109 can be a display device that needs to provide a backlight, including but not limited to: DSTN-LCD display (Dual Scan Tortuosity Nomograph-Liquid Crystal Display, double-layer super twisted nematic liquid crystal Display), TFT-LCD display (thin film transistor-Liquid Crystal Display), and the like.
  • DSTN-LCD display Dual Scan Tortuosity Nomograph-Liquid Crystal Display, double-layer super twisted nematic liquid crystal Display
  • TFT-LCD display thin film transistor-Liquid Crystal Display
  • the frame of the light source assembly 10 coincides with the position of the edge of the display area of the display assembly.
  • the ratio between the area of the display area of the display unit 110 and the area of the light-emitting surface of the fluorescent layer 131 is 1: (0.9-1.1).
  • the ratio between the area of the display area of the display component 110 and the area of the light emitting surface of the fluorescent layer 131 is further 1: (0.95-1.05).
  • the area of the display area of the display component 110 and the light emitting surface of the fluorescent layer 131 The ratio between the areas is 1:1. That is, the area of the light-emitting surface of the fluorescent layer 131 and the area of the surface of the carrier 11 on which the LE chip 12 is provided match.
  • the light source assembly 10 included in the display device 100 of the present invention has all the technical features included in the first embodiment and the second embodiment, and the same portions will not be described herein.
  • a fourth embodiment of the present invention provides an electronic device 40.
  • the electronic device 40 includes a support body 41.
  • the support body 41 has a display device 100 in the second embodiment.
  • a protective cover 42 is further disposed on a side of the display device 100 facing the user.
  • the support body 41 further includes a protrusion 411 symmetrically disposed on a sidewall of the support body 41, and the protrusion 411 can provide support for the display device 100.
  • the protrusion 411 further forms an internal space in the display device 100.
  • the volume of the electronic device 40 is prevented from being excessively large, thereby reducing the portability of the electronic device 40.
  • internal components such as the power component 192 and the driving chip 191 may be disposed in the device. In the internal space.
  • the display component 109 in the display device 100 is electrically connected to the driving chip 191 through a flexible circuit board 199. Since the flexibility of the flexible circuit board 199 is good, the distance P between the side wall of the support body 41 and the side surface of the display device 100 is negligible.
  • the difference from the existing electronic device is that the display device 100 and the support body 41 in the electronic device 40 provided by the present invention are independent of each other in display function, and therefore, the support body 41 only supports The action of the carrier 11 does not affect the display effect of the display device 100, and the support body 41 does not affect the light-emitting effect of the light source assembly 10.
  • the light source assembly 10 In order to maintain a good illuminating effect of the light source assembly 10 after partial bending, the light source assembly 10 needs to meet the above-mentioned distribution density requirements.
  • the carrier 11 can be a flexible carrier.
  • the carrier 11 when the light source assembly 10 is integrally bent, the carrier 11 is bent by a certain arc under the action of stress.
  • the fluorescent layer 131 is always attached to one side of the carrier 11 to which the LED chip 12 is fixed, and the fluorescent layer 131 is gradually curved in a direction in which the carrier 11 is bent, and the fluorescent The curvature of the layer 131 is curved to match the curvature of the carrier 11. That is, the deflection of the fluorescent layer 131 and the carrier 11 is substantially the same.
  • the deflection refers to a linear displacement of the centroid of the cross section along a direction perpendicular to the axis when the bending is performed.
  • the deflection of the reflective film 17 between the carrier 11 and the light-homogenizing layer 13 is uniform.
  • the electronic device 40 includes the light source assembly 10 of any of the embodiments described above.
  • the light source assembly 10 provided by the present invention does not generate a dark area in the edge region of the display component of the electronic device 40 as compared with the side-emitting light source or the direct-lighting light source commonly used in the prior art.
  • the electronic device 40 may not be provided with a frame for housing the display device 100, and the driving chip 191 and the power component 192 may be disposed at the side of the display device 100. To obtain thinner electronic devices.
  • the electronic device 40 can be an electronic device 40a of a flexible display assembly.
  • the light source assembly 10a having bendability can be obtained by selecting the above-described bendable, folded or crimped carrier, whereby an electronic device having a flexible display assembly can be prepared.
  • a fifth display device of the present invention provides a novel display device 70 including a carrier 71, a plurality of LED chips 72 disposed on the carrier 71, a driving circuit 79, and a cover on the LED chip 72. And a fluorescent layer 73 above the carrier 71, the plurality of LED chips 72 are defined as a plurality of regions 701, and the LED chips 72 in the plurality of regions 701 are driven and controlled by the driving circuit 79 for displaying images.
  • the light-emitting surface 731 formed by the light emitted from the plurality of LED chips 72 is homogenized by the same fluorescent layer 73.
  • the display device 70 is flexibly foldable; the single zone 701 includes one or more LED chips 72, and the LED chips 72 in the same zone 701 are driven synchronously.
  • the distance between two LED chips 72 disposed adjacently is 0.01 mm-0.75 mm, the LED chip 72 is rectangular, the length of the LED chip 72 is 0.01 mm-1 mm, and the width of the LED chip 72 is 0.01 mm. -0.5mm.
  • a microlens layer 75 is directly attached over the fluorescent layer 73, and the microlens layer 75 is provided with a plurality of microlenses 75 disposed corresponding to the LED chips 72.
  • the display device 70 defines a plurality of pixel points 79 arranged in an array, each pixel point 79 corresponding to a single LED chip 72 or each pixel point 79.
  • Three LED chips 72 are corresponding and the three LED chips 72 have different illumination colors.
  • the color of the three LED chips 72 may be a near-ultraviolet light or a blue light color.
  • the color of the three LED chips 72 is the three primary colors.
  • the LED chip 72 is arranged in an array, the driving circuit comprises a plurality of TFTs arranged in an array, a plurality of first driving lines and a plurality of second driving lines, each LED chip is connected to a drain of the TFT, and the LED chip a gate line of the connected TFT is connected to the first driving line, a source line of the TFT connected to the LED chip is connected to the second driving line, and a gate of the TFT connected to the LED chip in the same row is connected to the same strip a driving line, the gates of the TFTs connected to the LED chips of different rows are connected to different first driving lines, and the sources of the TFTs connected to the LED chips of the same row are connected to the same second driving line, which are different The gates of the TFTs to which the row of LED chips are connected are connected to different second drive lines.
  • the related definitions of the components such as the carrier 71, the land pattern 7121, the wire 7122, and the like in the display device 70 are the same as those in the light source assembly and the display device and the electronic device described in the first to fourth embodiments.
  • the relevant definitions are consistent and will not be specifically described here.
  • the main contents are as follows:
  • the carrier 71 includes two opposite sides, wherein one array is provided with a plurality of LED chips 72 and a fluorescent layer 73; and the other surface is provided with a plurality of pins for connecting with an external circuit, the pins and the LEDs
  • the chips 72 are electrically connected to each other.
  • the carrier 71 includes two layers of layers disposed in a superimposed manner, and a conductive layer is disposed between the two layers, the conductive layer includes a plurality of land patterns, and the land patterns are electrically connected by wires, wherein one layer A plurality of windows for exposing the corresponding land patterns are formed on the film layer, and the positive and negative electrodes of the LED chips are soldered on different land patterns.
  • the number of pixels per square centimeter is 10-400.
  • a plurality of land patterns and a plurality of sets of wires are disposed on one side of the carrier on which the LED chip 72 is disposed, and the positive electrode and the negative electrode of the LED chip are respectively soldered on two adjacently disposed two pad patterns, The wire connects some or all of the land pattern.
  • the display device 70 further includes a solar panel 707 that supplies power to the LED chip 72 through a driving circuit.
  • the display device 70 further includes a protective layer 708 that completely seals the display device 70 or seals a portion of the display device 70 other than the fluorescent layer 73;
  • the arrangement of the protective layer protects the LED chips in the display device 70 to extend the useful life of the display device 70.
  • the display device 70 further includes a fixing device 709 disposed on a side of the carrier 71 away from the light emitting surface 731, and the display device 70 is fixed to the other device by the fixing device 709. Further, the fixing device 709 can be a bonding structure, a snap structure, a stitching structure, or the like.
  • a sixth embodiment of the present invention provides a wearing device 80 which can be made by any of the above display devices 70; or includes a wearing device body 801 and a display device 70 disposed on the wearing device body 801. .
  • the wear setting 80 can be a garment
  • the display device 70 described above can be directly stitched onto the garment, and the display device 70 can be energized and illuminated by being equipped with a battery or a solar panel.
  • a method for fabricating a light source assembly is provided.
  • the present invention provides another A fixing method for fixing the LED chip on the carrier, the specific steps are as follows:
  • Step V101 providing a carrier having a pad pattern formed on one side of the carrier and forming a pin connected to the external circuit on the other side;
  • Step V102 forming a solder spot on a corresponding position of the land pattern
  • Step V103 placing the LED chip above the corresponding soldering point, so that the positive and negative electrodes of the LED chip are correspondingly soldered on two adjacent different pad patterns;
  • step V104 the LED chip is fixed on the carrier by reflow soldering.
  • step V105 the same pre-fabricated layer is formed over the plurality of LED chips to obtain the desired light source assembly.
  • step V101 may be specifically:
  • Step V111a forming a conductive via at a position corresponding to the carrier
  • Step V112a forming a first conductive layer and a second conductive layer on the opposite main surfaces of the carrier, respectively, specifically forming a copper conductive line, plating silver on the copper conductive line, and not guiding on the second conductive layer
  • the area of the foot is coated with white oil.
  • step V101 may include the following steps:
  • Step V111b providing two layers of film, and forming conductive vias at opposite positions of the two films;
  • Step V112b forming a plurality of sets of wires and a plurality of sets of wires connecting the land patterns on one main surface of one film, and forming a pin connected to the external circuit on the main surface of the other film;
  • step V113b the two faces of the two films which are not formed with the conductive lines are pressed against each other.
  • the above two-layer substrate is made of a polyimide material, that is, the LED chip is directly soldered on the FPC.
  • the step V102 may further be:
  • solder paste at a corresponding position on the first conductive layer by stencil printing to form a solder joint; specifically, using a solder paste machine to print the solder paste on the carrier provided with the land pattern through the steel mesh, so that the solder paste is coated At the solder joint;
  • step V104 may be further
  • the LED chip is further fixed on the carrier by reflow soldering; the LED chip is further fixed by using a nitrogen reflow furnace, the oxygen content is ⁇ 500 ppm, the reflow efficiency is 200K/H, and the low temperature solder paste temperature of the soldered LED chip is 200. °C, high temperature solder paste temperature is 260 °C.
  • the method may further include the steps of:
  • Step V106 placing a reflective film on a side of the carrier on which the LED chip is disposed, and the reflective film is provided with a window corresponding to the position and the number of the LED chips, and the LED chip can be exposed through the window.
  • the reflective film can be used to uniformly reflect the discovery of the LED chip, thereby enhancing the light efficiency of the light source assembly.
  • the step of hot pressing the fluorescent film to soften the pre-formed fluorescent film and forming a fluorescent layer 131 includes:
  • Step T101 a hot pressing, the fluorescent layer 12 is converted from a solid state to a semi-solid state, the fluorescent layer 12 substantially conforms to the surface of the carrier and covers all of the LED chips 12;
  • Step T102 secondary hot pressing, the fluorescent layer 12 is converted from a semi-cured state to a colloidal state, so that the fluorescent layer 12 is evenly and completely adhered to the surface of the carrier 11 and the LED chip 12;
  • step T103 after the second hot pressing, the fluorescent layer 12 is cooled and solidified to obtain a desired fluorescent layer 131.
  • the fluorescent layer is formed on the main surface of the carrier to which a plurality of the LED chips are fixed by a hot pressing process.
  • the phosphor layer covers all of the LED chips that are attached to the carrier. Different from the prior art fluorescent glue covering in a single LED chip, in the present invention, since the fluorescent layer covers the LED chip, the light source component can be more uniform in luminous effect.
  • the temperature of the primary hot pressing is 50-80 ° C
  • the time of the primary hot pressing is 10-20 min
  • the temperature of the secondary hot pressing is 120-180 ° C
  • the hot pressing time is 15-40 min.
  • the primary hot pressing and the secondary hot pressing are performed in an environment where the gas pressure is 10 torr or less.
  • the time for hot pressing of the hot-pressed thermometer may be further limited.
  • the temperature of the primary hot pressing is 57-63 ° C, the time of the primary hot pressing is 13-17 min; the temperature of the secondary hot pressing is 134-167 ° C, and the hot pressing time is 20-37 min;
  • the primary hot pressing and the secondary hot pressing are performed in an environment having a gas pressure of 7 torr or less.
  • the LED chip is a blue chip or a near ultraviolet light chip
  • the fluorescent layer includes a yellow phosphor, a combination of a red phosphor and a green phosphor, and a yellow phosphor, a red phosphor, and a green phosphor. Any of the combinations. Wherein, in combination with a yellow phosphor, a red phosphor and a green phosphor, a combination of a yellow phosphor, a red phosphor and a green phosphor, the selection of a specific phosphor and its composition are as described in the first embodiment of the present invention. , will not repeat them here.
  • an eighth embodiment of the present invention provides a method 1010 for preparing a light source assembly, which includes the following steps:
  • Step Q101 providing a conductive layer, forming a plurality of land patterns on the conductive layer and a plurality of sets of wires connecting the land patterns;
  • Step Q102 two thin films are disposed on the upper and lower surfaces of the conductive layer; and a plurality of windows for exposing the land patterns are formed on the upper pads on the upper film;
  • Step Q103 forming a solder spot on the corresponding land pattern
  • Step Q104 placing the LED chip above the corresponding soldering point, so that the positive and negative electrodes of the LED chip are soldered and fixed on two adjacent different pad patterns;
  • step Q105 after the plurality of LED chips are overlaid to form the same pre-fabricated layer, the desired light source assembly is obtained.
  • a specific step of forming a solder spot, fixing the LED chip, and forming the pre-fabricated layer on the pad pattern formed by the conductive layer is the same as that in the fifth embodiment, and details are not described herein again.
  • the method of preparing the light source assembly Q10 can produce a flexible foldable light source assembly.
  • a pitch between the land patterns that is, a density of the distribution thereof, and a line width of the wires to effectively place the LED chips in a limited space. Achieve uniform illumination of the light source assembly.
  • the light source assembly provided by the present invention is compared with an existing light source, wherein
  • the light source comprises a side-emitting light source and a direct-lighting light source
  • the light source assembly, the existing side-emitting light source and the direct-lighting light source provided by the invention are respectively based on "General Specification for LED Display Components SJ/T 11141-2003" Performing tests for brightness, light efficiency, and luminous flux
  • the light source assembly, the conventional side-emitting light source, and the direct-lighting light source provided by the present invention all comprise a blue chip and a yellow phosphor along the display.
  • the number of LED chips distributed on the long side of the module is the same, and the same amount of power is applied to test and record.
  • the LED chip of the light source assembly provided by the invention has a circular shape with a diameter of 0.01 mm, a spacing between two adjacent LED chips is 0.03 mm, and a minimum thickness h1 of the fluorescent layer is 0.06 mm.
  • the overall thickness of the light source assembly is 0.2 mm.
  • the total light emitting area of the light source assembly is 66*60 mm, and 50 LED chips are disposed per square millimeter.
  • the brightness and light efficiency of the light source assembly provided by the present invention can be increased by 1/3 compared with the existing light source, and the luminous flux of the light source assembly can be increased by 1.5 times compared with the existing light source.
  • the uniformity of illumination of the display device 100 in the first embodiment provided by the present invention is further detected.
  • the brightness uniformity test was performed on the above three test groups.
  • the test method is as follows: a plurality of test points are selected, and the test points are evenly distributed in the light-emitting area, and brightness is detected for a plurality of test points, and recorded.
  • test points needs to be adjusted according to the size of the display device actually tested.
  • the test points can be positioned 6, 9, 10, 13 or 30 for the size of the display device.
  • the brightness uniformity for the entire display device is obtained by comparing the brightness of each test point obtained by the test.
  • the light source assembly provided by the present invention compares brightness, light effect or luminous flux, and brightness uniformity, and the light source assembly provided by the present invention is superior to the existing side light source or straight down. Illuminated light source.
  • the light source assembly and the display device provided by the invention have the following beneficial effects:
  • the invention provides a light source assembly, which comprises a plurality of light emitted by the LED chip being homogenized by the same fluorescent layer to form a continuous light emitting surface, the area of the light emitting surface and the fluorescent layer being away from the LED chip
  • the area of one side is equal; the ratio of the area of the light emitting surface to the side of the carrier carrying the LED chip is 1: (0.9-1.1).
  • the light source assembly provided by the invention realizes a narrow border or even no border, and the light emitting component has better illumination effect.
  • the light source assembly provided by the present invention can be used with a conventional LCD screen to provide a low-power, stable and uniform illumination backlight assembly for realizing large screen occupation.
  • the ratio shows an alternative that offers an economical, high-capacity yield and a strong promotion.
  • the film layer is a flexible material, and the film layer may further preferably be a flexible material.
  • the film layer is flexible and foldable, that is, the light source assembly made of the same can be light, flexible, and foldable. Therefore, the light source assembly can provide a variety of backlights and display effects for the display screen.
  • the single land pattern may be composed of a copper foil layer and a silver plated layer disposed thereon, which may be disposed over the silver plating layer.
  • the copper foil layer can provide a stable and effective circuit connection relationship, and the arrangement of the silver plating layer can improve the light reflectivity of the land pattern, thereby avoiding the light absorption of the copper foil layer in the land pattern, resulting in the light source assembly.
  • the dark area is displayed, so that the uniformity of illumination of the light source assembly can be further improved.
  • a reflective layer may be formed on the surface of a film provided with the LED chip, and the reflective layer may further be a white oil layer or an aluminum foil reflective film. Layer or silver reflective film layer.
  • the arrangement of the above reflective layer can further improve the light emissivity of the surface of the film layer without opening the window, prevent the light source emitted by the LED chip from being absorbed by the film layer, and appear dark areas, and further, through the setting of the white oil layer, further The overall luminous effect of the LED chip is improved, and the uniformity of illumination is improved.
  • the pins connecting the light source component and the external circuit may be further disposed in the same layer as the conductive layer or disposed on the conductive layer stack.
  • the pins can be folded through the film layer and disposed below the orthographic projection area of the conductive layer. Thereby, the light emitting surface of the light source assembly is made to coincide with the overall area of the carrier.
  • the LED chips in the light source assembly are preferably in an array distribution, wherein, in order to make the thickness of the fluorescent layer correspondingly small, between two adjacent LED chips
  • the spacing may be from 0.01 mm to 1 mm. Since the thickness of the phosphor layer is related to the size of the gap between the two LED chips, the thickness of the light source assembly may be further adjusted by adjusting the spacing between the two LED chips to It satisfies the preparation of a light source component which is light and thin and has uniform light efficiency.
  • the long side of the light source assembly is disposed in parallel with the long side of the LED chip, and the short side of the light source assembly is disposed in parallel with the short side of the LED chip, so that the light emitting surface of the single LED chip and the light source assembly
  • the overall illuminating surface is matched to fully utilize the luminous effect of the LED chip, thereby obtaining a more uniform illuminating effect.
  • the size limitation of the LED chip a superior illuminating effect can be obtained.
  • the LED chip can be reasonably utilized to reduce the usage of the LED chip and the manufacturing cost of the light source assembly, so that the light source assembly provided by the present invention can be used more widely.
  • the display device provided by the present invention, a plurality of the LED chips are packaged in the same fluorescent layer to form a planar light source.
  • the side of the fluorescent layer away from the carrier is equivalent to the display area of the display screen, and the fluorescent layer is adhered to the display component without a gap, and the light guiding plate and the reflecting plate are not required to have a superior luminous effect. And can provide a uniform surface light source for the display.
  • the light source assembly prepared by the above method can ensure a superior light-emitting effect, a fluorescent layer integrally formed and having a conductive structure can be obtained without providing an auxiliary structure such as a surrounding frame, thereby simplifying the process steps.
  • the display device provided by the invention can be used as an alternative to the OLED display screen, thereby providing a high-featured, low-cost and high-quality solution for obtaining a comprehensive screen and a thin and light display device and an electronic device thereof.
  • the LED chip is fixed on the carrier according to a certain arrangement rule, and the carrier can be directly used as a conductive, that is, the carrier can be directly a flexible circuit board; further,
  • the fluorescent film in a solid state covers the LED chip and the carrier; the fluorescent film is hot pressed to soften the fluorescent film and form a fluorescent layer, and the LED chip is completely packaged in the light source assembly
  • the light emitted by the LED chip and the light emitted by the phosphor composition are diffused to form uniform white light, so that the light guide plate and the reflector are not required to be obtained.
  • the light source assembly has a simple structure and a simple preparation process.
  • the LED chips are all packaged in the same fluorescent layer, and the LED chip can achieve uniform illumination and have a certain light refraction space, the LED chip and the diffusion sheet are disposed without gaps, thereby further The thickness of the backlight module is reduced, the structure of the backlight module is simplified, and the use and assembly of the backlight module are facilitated.
  • the preparation method It is possible to form the LED chip directly on the FPC, thereby obtaining a light source assembly having a flexible foldable.
  • the method provided by the invention has high feasibility, low cost and high yield rate, and has large promotion value.
  • the light source assembly provided by the present invention can also be applied to a flexible display screen, and can ensure display quality and a wide color display range while ensuring display quality and a wide color display range.
  • the flexible liquid crystal module provides a light source that emits light uniformly.
  • the optical loss can be greatly reduced, that is, the power consumption of the light source assembly can be provided under the condition of providing the same light emission brightness.
  • the amount is much smaller than the power consumption of the prior art. That is, by adopting the technology provided by the invention, the brightness of the light source component can be improved without increasing the power consumption, and by adopting a novel light source component, the power consumption and heat generation of the electronic device can be greatly reduced, thereby improving The performance of the electronic device.
  • the invention provides a light source assembly, wherein a positive electrode and a negative electrode of the LED chip are respectively soldered on two adjacently disposed two pad patterns, the wires connecting part or all of the land patterns; and a single of the LED chips
  • the area of the orthographic projection is greater than or equal to the area occupied by the two land patterns corresponding to the LED chip. Based on the above structure, more LED chips can be disposed on the carrier of the same area and not due to the land pattern and the wire.
  • the distribution of the actual LED chips is set to meet various lighting effects and uniformity requirements. Compared with the conventional side illuminating light source assembly or the direct type illuminating assembly, the distribution density can be smaller, and the dark area does not appear due to the excessive spacing of the LED chips.
  • the light source assembly provided by the present invention can be used with a conventional LCD screen to provide a low-power, stable and uniform illumination backlight assembly for realizing large screen occupation.
  • the ratio shows an alternative that offers an economical, high-capacity yield and a strong promotion.
  • a plurality of the LED chips are packaged in the same fluorescent layer to form a planar light source.
  • the side of the fluorescent layer away from the carrier is equivalent to the display area of the display component, and the fluorescent layer and the display component are not gap-fitted, and the light guide plate and the reflector are not required to have a better light-emitting effect. And can provide a uniform surface light source for the display component.
  • the width of the LED chip is larger than the width of any of the pad patterns, thereby overcoming the problem that the pad pattern is too large in the prior art and the spacing between the LED chips is too large.
  • a pitch between the land patterns that is, a density of the distribution thereof, and a line width of the wires to effectively place the LED chips in a limited space. Achieve uniform illumination of the light source assembly.
  • connection relationship between the land pattern and the wire can meet the needs of the number of LED chips, and the circuit connection relationship can be adjusted to make the voltage and current output of the light source component meet the needs. Better applied to various display devices and electronic devices.
  • a microlens layer may be directly attached to the fluorescent layer, and the microlens layer further includes a plurality of microlenses disposed corresponding to the LED chip, and the microlens layer may further improve the The uniformity of illumination and the brightness of the light source components can save the amount of LED chips used and the overall energy consumption of the light source components.
  • the carrier may include two layers of flexible film layers disposed in a superimposed manner, and a conductive layer is disposed between the two flexible film layers, the conductive layer is composed of the plurality of solder patterns and a plurality of sets of wires, and the LED chip may be soldered correspondingly Above the solder pattern.
  • the overall thickness of the carrier can be further reduced, thereby further reducing the overall thickness of the light source assembly.
  • the light source component provided by the invention can realize the flexibility of the light source component while ensuring the light emitting effect thereof, so as to be compatible with the narrow frame or even the frameless display device. preparation.
  • the light source assembly provided by the present invention can be used with a conventional LCD screen to provide a low-power, stable and uniform illumination backlight assembly for realizing large screen occupation.
  • the ratio shows an alternative that offers an economical, high-capacity yield and a strong promotion.
  • the present invention also provides a display device including a display assembly and the above-described light source assembly, wherein the light source assembly can be directly attached to the display assembly.
  • the thickness of the light source component is significantly smaller than that of the existing backlight module, and since the light source component is front-illuminated, it has higher brightness and more brightness than the existing backlight module. Good uniformity.
  • the present invention provides a display device including a fluorescent layer overlying the LED chip and the carrier, the plurality of LED chips being defined as a plurality of regions, and the LED chips in the plurality of regions are driven by the driving circuit
  • the partition driving control is for displaying an image, and a light emitting surface formed by a plurality of the LED chips is homogenized by the same fluorescent layer.
  • the LED chip can directly display an image.
  • the display device can be used as an alternative to the OLED display device, thereby providing a solution with high feasibility, low cost and high yield for obtaining a large screen and a thin and light display device and its electronic device.
  • the display device is further flexible and foldable, and the single area includes one or more LED chips, and the LED chips in the same area are synchronously driven.
  • the range of use of the display device and the specific use scene can be expanded. Simultaneous driving of a single LED chip or all LED chips in the same area can further improve the controllability and display diversity of the LED chip directly displaying images.
  • the distance between two adjacent LED chips is 0.01 mm-0.75 mm, the LED chips are rectangular, the length of the LED chips is 0.01 mm-1 mm, and the width of the LED chips is 0.01 mm-0.5 mm.
  • the display device provided by the present invention has a higher display density and a higher display fineness, and the display device can be used as a display screen such as a handheld mobile device. Further, since the display device is full-surface illumination, it has better illumination uniformity than the existing display screen.
  • a microlens layer is attached on the fluorescent layer to further improve display brightness and display effect of the display device.
  • the display device defines a plurality of pixel points arranged in an array, and each pixel point can correspond to a single LED chip or three LED chips.
  • the LED chip can be further used as The pixels are driven to achieve a variety of display effects of the display device.
  • each LED chip is connected to the drain of the TFT, the gate line of the TFT connected to the LED chip is connected to the first driving line, and the source electrode line of the TFT connected to the LED chip is connected to the second driving line.
  • the gates of the TFTs connected to the LED chips in the same row are connected to the same first driving line, and the gates of the TFTs connected to the LED chips in different rows are connected to different first driving lines, and the LEDs in the same row
  • the source of the TFT connected to the chip is connected to the same second driving line, and the gates of the TFTs connected to the LED chips of different rows are connected to different second driving lines.
  • the carrier includes two opposite sides, wherein one array is provided with a plurality of LED chips and a fluorescent layer; and the other surface is provided with a plurality of pins for connecting with an external circuit, between the pins and the LED chip Electrical connection.
  • the carrier may include two layers of flexible film layers disposed in a superimposed manner, and a conductive layer is disposed between the two flexible film layers, the conductive layer is composed of the plurality of solder patterns and a plurality of sets of wires, and the LED chip may be soldered correspondingly Above the solder pattern.
  • the overall thickness of the carrier can be further reduced, thereby further reducing the overall thickness of the light source assembly.
  • the light source component provided by the invention can realize the flexibility of the light source component while ensuring the light emitting effect thereof, so as to be compatible with the narrow frame or even the frameless display device. preparation.
  • the light source assembly provided by the present invention can be used with a conventional LCD screen to provide a low-power, stable and uniform illumination backlight assembly for realizing large screen occupation.
  • the ratio shows an alternative that offers an economical, high-capacity yield and a strong promotion.
  • the display device further includes a solar panel that provides an electrical energy source for the LED chip, thereby enabling self-luminous illumination of the display device to provide a wider range of application of the display device.
  • the present invention also provides a wearing device, which can be fixed on the main body of the wearing device, such as clothes, hats, shoes, watches or school bags, etc., since the display device is light and thin, it can be directly sewn Above the body of the wear device.

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Abstract

提供一种光源组件、显示装置及光源组件的制备方法。光源组件包括：载体（11），阵列甚至在载体（11）上的多个LED芯片（12）及覆盖在LED芯片（12）及载体（11）上的荧光层（13），多个LED芯片（12）发出的光经同一荧光层（13）进行匀光后形成一连续的发光面，发光面的面积与荧光层（13）远离LED芯片（12）的一面的面积相等，发光面与载体（11）承载LED芯片（12）的一面的面积之比为1：（0.9-1.1）。与传统侧发光光源组件或直下式发光组件相比，本申请的光源组件、显示装置可设有窄边框甚至无边框，且发光效果更优；与现有主流的OLED屏相比，可配合传统的LCD屏使用，提供低功耗、稳定且发光均匀的背光源组件。

Description

光源组件、显示装置及光源组件的制备方法 【技术领域】
本发明涉及LED显示领域，尤其涉及一种光源组件、显示装置及光源组件的制备方法。
【背景技术】
LED(Light Emitting Diode)是现有常见的固体光源，其具有寿命长、稳定性高、节能环保等特点。现有的LED显示组件一般是将多个LED芯片封装在一电路板上，无论是采用侧边式发光、直下式发光等方式，现有LED光源中均具有一围框或封闭结构以使所述荧光胶通过涂覆成型于所述LED芯片之上，但是这样制备工艺往往需要在所述LED光源边缘处设置光反射区域，从而使LED光源在发光效果不均匀且需要设置反射板等结构以达到匀光的效果，现有为显示组件提供背光源的整体厚度较大，难以满足人们对数码产品轻薄化的需求。
更进一步地，随着消费者对数码产品屏幕显示的要求也越来越高，现有主流大屏或全面屏手机主要是以OLED(有机发光二极管，Organic Light-Emitting Diode)作为显示组件。但是由于OLED技术本身的局限，造成其产能不足且成本昂贵，不利于OLED显示组件的全面推广。现有传统背光源中由于结构的局限性，难以将其光源的黑框去除做到窄边框及无边框，因此，大大局限了大屏手机或全面屏手机的推广。
随着市场对于具有显示组件电子设备多元化要求越来越高，现有LED光源技术已经无法满足市场需求。因此，亟待提供一种新型的LED发光技术以解决现有LED光源。
【发明内容】
为克服现有显示装置难以实现全面屏及轻薄化的问题，本发明提供一种光源组件、显示装置及光源组件的制备方法。
本发明为解决上述技术问题，提供一技术方案如下：一种光源组件，所述光源组件包括一载体、阵列设置在载体之上多个LED芯片及覆盖在所述LED芯片及载体之上的荧光层，多个所述LED芯片发出的光经同一荧光层进行匀光后形成一连续的发光面，所述发光面的面积与所述荧光层远离所述LED芯片的一面的面积相等；所述发光面与所述载体承载LED芯片的一面的面积之比为1∶(0.9-1.1)。
优选地，所述荧光层的发光面的面积与所述载体承载LED芯片的一面的面积之比为1∶1。
优选地，所述荧光层对应的每平方毫米之下设置1-13颗LED芯片。
优选地，相邻设置的两个LED芯片之间的间距为0.01mm-1mm，所述LED芯片的长度0.01mm-1mm，所述LED芯片的宽度为0.01mm-0.5mm。所述光源组件的厚度为0.01mm-0.6mm。
优选地，所述载体设有LED芯片的一面上设有多个焊盘图案及多组导线，所述LED芯片的正极和负极分别对应焊接在相邻设置的两个焊盘图案之上，所述导线连接部分或全部焊盘图案；单颗所述LED芯片的正投影面积大于等于LED芯片对应的两个焊盘图案所占区域面积。
优选地，所述载体与设置LED芯片相对的一面设有多个用于与外接电路连接的引脚，所述引脚与所述LED芯片之间电性连接。
优选地，所述载体包括叠加设置的两层膜层，在两层膜层之间设有一导电层，所述导电层包括多个焊盘图案，焊盘图案之间通过导线电性连接，其中一层膜层上开设有使对应焊盘图案外露的多个窗口，所述LED芯片的正极和负极对应焊锡在不同的焊盘图案之上；所述光源组件还包括一荧光层，同一荧光层填充所述LED芯片之间的间隙且覆盖所有LED芯片。
优选地，所述膜层为柔性材料。
优选地，所有焊盘图案及导线均设置于所述荧光层的正投影区域之内。
优选地，所述载体设有LED芯片的一面之上及所述荧光层之间设有一反射层，所述反射层设有多个窗口，LED芯片设置在窗口之内。
优选地，所述光源组件进一步包括白边，所述白边形成于 载体之上且围绕所述荧光层设置；所述白边的外围与所述载体的外围一致；所述白边的厚度为0.001mm-0.1mm。
优选地，在所述荧光层之上直接贴附一微透镜层，所述微透镜层上设有与LED芯片对应设置的多个微透镜。
本发明为解决上述技术问题，提供又一技术方案如下：一种显示装置，其包括显示组件及如上所述的光源组件，所述光源组件直接贴附于所述显示组件之上。
优选地，所述载体的边缘处与所述显示组件的边缘处齐平。
本发明为解决上述技术问题，提供又一技术方案如下：一种光源组件的制备方法，其包括以下步骤：提供一载体及在载体上的其中一面上形成多个焊盘图案及连接焊盘图案的多组导线，另一面上形成与外接电路连接的引脚；焊盘图案的对应位置上形成焊锡点；将LED芯片放置到对应的焊锡点之上，以使LED芯片的正极和负极对应焊接固定在相邻设置的两个不同的焊盘图案之上；在多个LED芯片之上覆盖形成同一预制荧光层后，获得所需光源组件。
相对于现有技术，本发明所提供的光源组件及其显示装置具有如下的有益效果：
本发明提供一种显示装置，其包括覆盖在所述LED芯片及载体之上的荧光层，所述多个LED芯片界定为多个区，所述多个区内的LED芯片被所述驱动电路分区驱动控制以用于显示图像，多个所述LED芯片发出的光经同一荧光层进行匀光后形成的发光面。在本发明中，所述LED芯片可直接显示图像。所述显示装置可作为OLED显示装置的替代方案，从而为获得大屏及轻薄化的显示装置及其电子设备提供一可行性高、成本较低且良品率高的解决方案。
本发明还提供一种穿戴装置，所述显示装置可固定在穿戴装置主体之上，穿戴装置主体包括如衣服、帽子、鞋子、手表或书包等，由于所述显示装置轻薄，因此可直接缝制在所述穿戴装置主体之上。
【附图说明】
图1是本发明第一实施例所提供的光源组件的立体结构爆炸示意图。
图2A是本发明所述光源组件中相邻设置的两个LED芯片的发光效果示意图。
图2B是所述光源组件中载体、LED芯片及反射膜的层结构示意图。
图3是所述光源组件中载体上形成的第一导电层、第二导电层的结构示意图。
图4A是图3中所示第一导电层结构的平面示意图。
图4B是图4A中C处所示放大示意图。
图4C是图4B中同行设置的焊盘图案对应焊接LED芯片后的结构示意图。
图5是本发明中第二导电层的平面示意图。
图6A是图3中所示第一导电层的一变形实施例的平面示意图。
图6B是图6A中所示第一导电层的简化电路连接的示意图。
图6C是图6A中D处所示放大示意图。
图7A是图1中所示光源组件中第一具体实施例的层结构示意图。
图7B是图7A中E处放大示意图。
图8A是所示光源组件中第二具体实施例的层结构示意图。
图8B是所示光源组件中匀光层为微透镜层的层结构示意图
图9A是所述光源组件中白边的结构示意图。
图9B是图9A中所示F处的放大示意图。
图10A是本发明第二实施例所提供光源组件的载体的层结构示意图。
图10B是图10A中所示一列焊盘图案焊锡固定多个LED芯片后的结构示意图。
图10C是本发明第二实施例所提供光源组件的层结构示意图。
图10D是单个焊盘图案的层结构示意图。
图11A是本发明第三实施例所提供显示装置的层结构示意图。
图11B是本发明第三实施例所提供显示装置的驱动组件与电源组件的模块示意图。
图12是本发明第四实施例提供的电子设备的结构示意图。
图13是图12中所述电子设备中，所述光源组件处于弯曲状态的结构示意图。
图14A是本发明第五实施例所提供的显示装置的立体结构示意图。
图14B是图14A中所述荧光层上述设置微透镜层的层结构示意图。
图14C是图14A中所述显示装置中像素点的结构示意图。
图14D是所述显示装置具体实施例的结构示意图。
图15是本发明第六实施例提供的穿戴装置的结构示意图。
图16是本发明第七实施例所提供的光源组件的制备方法的流程示意图。
图17是图16中步骤V101的具体步骤流程示意图。
图18是图16中步骤V105的具体步骤流程示意图。
图19是图18中所示荧光膜一次热压、二次热压的结构变化示意图。
图20是本发明第八实施例所提供的光源组件的制备方法的流程示意图。
【具体实施方式】
为了使本发明的目的，技术方案及优点更加清楚明白，以下结合附图及实施实例，对本发明进行进一步详细说明。应当理解，此处所描述的具体实施例仅仅用以解释本发明，并不用于限定本发明。
请参阅图1，本发明第一实施例提供一种光源组件10，其中，所述光源组件10包括载体11及均匀设置在载体11之上的多个LED芯片12，光源组件10进一步包括一匀光层11，多个LED芯片12之上设置同一所述匀光层13。LED芯片12发出的光直接进入匀光层13内进行散射后，形成一连续且均匀的发光面。所述发光面的面积与所述匀光层13远离所述LED芯片的一面的面积相等；所述发光面与所述载体11承载LED芯片12的一面的面积之比为1∶(0.9-1.1)，更进一步地，所述发光面与所述载体11承载LED芯片12的一面的面积之比为1∶1。在本发明中，匀光层13覆盖全部载体11，更优地，匀光层13与载体11的面积一致，即载体11的外围与匀光层13的外围一致。
为了使光源组件10具有更优的发光效果，在匀光层13对应的每平方毫米之下可设置1-13颗LED芯片12。本发明此处及以下所述的“上”、“下”方位词仅相对于附图方位而言，不作为本发明的限定。更优地，在匀光层13对应的每平方毫米之下可设置1-5颗、5-9颗或8-15颗LED芯片12，具体地，在匀光层13对应的每平方毫米之下可具体设置13颗、12颗、11颗、10颗、9颗、8颗、7颗、5颗、3颗、2颗或1颗。
在本发明中，所述LED芯片12的形状可为条形、圆形、正方形等。当所述LED芯片12为条形时，所述LED芯片12的长度为0.01-1mm，所述LED芯片的宽度为0.01-0.5mm。优选地，所述LED芯片12的长度为0.01mm、0.015mm、0.127mm、0.2mm、0.34mm、0.51mm、0.6mm、0.9mm、0.97mm或1mm。所述LED芯片12的宽度为0.01mm、、0.015mm、0.127mm、0.2mm、0.34mm或0.5mm。较优地，所述LED芯片12的长度优选为0.228mm、所述LED芯片12的宽度优选为0.127mm。
当所述LED芯片12为圆形时，上述所述LED芯片12的直径为0.01mm-0.75mm。更优地，所述LED芯片的直径可进一步为0.01mm-0.01mm、0.01mm-0.03mm、0.03mm-0.07mm、0.07mm-0.12mm、0.11mm-0.2mm、0.2mm-0.5mm或0.55mm-0.75mm。具体地址，所述LED芯片的最大尺寸为0.006mm、0.08mm、0.01mm、0.013mm、0.03mm、0.05mm、0.07mm、0.091mm、0.1mm、0.11mm、0.15mm、0.18mm、0.31mm、0.45mm、0.56mm或0.75mm。
更进一步地，在本发明中，在长条形的光源组件10中，为了使光源组件10具有更优的发光效果，所述LED芯片12一般选用长条形，以获得更大的出光面。更进一步地，当所述LED芯片12的长边与所述光源组件10的长边对应，而所述LED芯片12的短边与所述光源组件10的短边对应。
为了使设置在匀光层13之下的多个LED芯片12的发光均匀度更佳，如图2A中所示，单颗LED芯片12具有五个发光面，发光角度优选为140℃-150℃。LED芯片12的厚度为0.01mm-0.5mm，更优地，所述LED芯片12的厚度为0.01mm、0.0254mm、0.03mm或0.5mm。
为了使LED芯片12之间光线均匀，可进一步将对相邻设置的LED芯片12之间的间距进行限定。结合图1及图2中所示，相邻设置的两个所述LED芯片12之间的间距e为0.01mm-0.75mm。优选地，相邻设置的两个所述LED芯片12之间的间距e还可为，0.01mm-0.025mm、0.025mm-0.0.037mm、0.037mm-0.052mm、0.052mm-0.09mm、0.09mm-0.14mm、0.14mm-0.31mm或0.31mm-0.75mm。更进一步地，所述间距e还可优选为0.01mm、0.07mm、0.08mm、0.19mm、0.251mm、0.31mm或0.75mm中的任一值。更进一步地，为了获得更优的发光效果，在本实施例的一些具体实施例中，多个所述LED芯片12等间距分布。在本实用新型中，间距的设置，可有效提高所述光源组件10的发光均匀度。
如图2B中所示，在本发明中，为了增强所述光源组件的发光效果，当所述LED芯片12的分布间距较大时，可在所述载体11之上及在所述匀光层13之间设有一反射层17，所述反射层17铺设在所述载体11设有LED芯片的一面之上，所述反射层17上设有与LED芯片12的数量及位置相匹配的窗口171，用于使所述LED芯片12露出，且为LED芯片提供反射，以达到减少LED芯片12的使用的同时，也可获得较优的匀光效果及发光亮度。
在本发明中，所述反射层17可为铝箔反射膜、银反射膜。所述反射层17的厚度不受限制。加入反射层17后，所述光源组件10的光效可在原有的基础之上提高1-30％。
为了使所述反射层17与所述载体11、所述匀光层13之间粘接更为紧密，所述反射层17与所述载体11、所述匀光层13之间可设置粘接层(图未示)。
在发明中，通过加入所述反射膜17，在具有相同的LED芯片12的数量及排布方式的基础上，可进一步提高所述光源组件的10的光效。
在本发明中，所述载体11的材质可为铜、铝等金属及其合金载体，具体如不锈钢、黄铜等；也可以是柔性塑料载体，如环氧玻纤板、聚醚醚酮、聚酰亚胺、聚碳酸酯聚碳酸酯、聚对苯二甲酸乙二醇酯、聚丁二酸乙二醇酯、聚甲基丙烯酸甲酯、聚氯乙烯、聚丙烯、聚碳酸酯、聚芳酯、聚醚砜、聚萘二甲酸乙二醇酯及其任意组合的复合物等材料。
所述载体11可为单层结构或双层结构，当所述载体11为双层结构时，所述载体11优选为由双层薄膜压合而形成，且两个薄膜的主表面上分别形成有焊接LED芯片12的电路及用于与外接电路连接的电路。
在本发明中，所述载体11采用双层结构，尤其是采用双层薄膜压合而成，可进一步减少载体11的厚度，更进一步地，通过分别在两个薄膜上形成所需的导电线路后，再将薄膜进行压合，可在保证在载体11厚度较薄的同时，还可进一步使保证LED芯片焊接的牢固性及电路连接的稳定性。
当所述载体11为双层聚酰亚胺膜压合而成，且在聚酰亚胺膜的表面上形成导电线路时，即为所述LED芯片是直接焊接在FPC之上。
为了使所述光源组件10的整体尺寸更为轻薄化，以适应轻薄化电子设备的产品要求，在本发明一些较优的实施例中，所述载体11的厚度为0.01mm-0.4mm，优选地，所述载体11的厚度F为0.06mm-0.5mm。优选地，所述载体11的厚度还可为0.06mm-0.09mm、0.09mm-0.2mm、0.19mm-0.2mm、0.1mm-0.3mm和0.29mm-0.4mm，更进一步地，所述载体11的厚度F可具体为0.06mm、0.07mm、0.09mm、0.17mm、0.2mm、0.21mm、0.29mm或0.4mm。
在本实施例中，在本发明的一些实施例中，将所述具有连续发光面的面光源随意划分为四个区域、五个区域。可以理解地，可以是两个区域、三个区域、六个区域等进行划分，所述区域互相之间的平均发光强度。在本发明一些最佳的实施例中，所述具有连续发光面的面光源中任意两个区域之间的发光强度之比进一步为1∶1。
与现有技术相比，采用本实施例中所提供的光源组件10所发出的光线的光效更高且光利用率更高，发光强度较现有的直下式面光源及侧发光式面光源更为均一。
请继续参阅图3，在本发明中，在所述载体11设置有LED芯片12的一面为所述载体11的第一表面1101，而在于第一表面1101相对设置的一表面定义为第二表面1102。在载体11的第一表面1101上形成有一第一导电层14，及在载体11的第一表面1102上形成有一第二导电层15，其中，第一导电层14与第二导 电层15可通过在载体11相应的表面上通过蚀刻或电镀的方式形成，也可通过层压的方式形成，在此不受限制。
如图4A中所示，所述第一导电层14包括多个焊盘图案组140及连接部分所述焊盘图案组140的多组导线149，其中，优选地，多个焊盘图案组140与多组导线149为共平面设置。且多组导线149之间为平行设置。
每组导线149中包括多条第一导线142与一条第二导线143，其中多条第一导线142之间沿同一直线间隔设置，多条第一导线142与一条第二导线143之间为平行设置。在第一导线142与第二导线143之间平行设置多组焊盘图案组140。请参阅图4B及图4C中所示，每组焊盘图案组140由至少三个沿同一直线间隔设置的焊盘图案141组成，优选地，相邻设置的焊盘图案141之间为等间距分布。在本发明中，优选地，焊盘图案141的面积为(0.01-0.1)mm*(0.01-0.1)mm，所述焊盘图案141的面积可具体为0.05mm*0.05mm或0.1mm*0.1mm。
在本发明中，多个焊盘图案141之间为成排分布或阵列分布设置。
在本发明中，如图4B中所示，一个LED芯片12的正极和负极可分别对应焊接在相邻设置的两个焊盘图案141之上，其中，LED芯片12的宽度大于任一所述焊盘图案141的宽度，所述LED芯片12的正投影面积大于等于LED芯片对应的两个焊盘图案所占区域的面积。
在本发明中，所述第一导线142或所述第二导线143连接部分焊盘图案141。如图4B中所示，第一导线142与第二导线143之间等间距分布有四个焊盘图案141，两两相邻设置的焊盘图案141之间对应焊接一LED芯片12，LED芯片12与焊盘图案141之间共同形成由正极至负极导通的串联电路。
在本发明一些较有的实施例中，所述反射层17可具体为设置在所述焊盘图案141之上，所述反射层17上设置的窗口171，LED芯片12可设置在窗口171之内。
继续如图4A及图4B中所示，所述第一导线142将所述焊盘图案141分为多个LED芯片区域，所述第二导线143将多个LED芯片区域以串联或并联的方式电连接。具体地，在LED芯片12通过锡膏焊接在所述焊盘图案141后，所述第一导线141进而将所述LED芯片12进一步分为多个LED芯片区域；所述第二导线143将多个LED芯片区域以串联或并联的方式电连接，进而实现分区电性控制所述LED芯片12。
其区分的方式如图4A及图4B中所示，所述第一导线142同时连接11组焊接图案组140，每个焊接图案组140内包括沿Y方向等间距分布的四个焊接图案141。如图4C中所示，相邻设置的两个焊接图案141之间对应焊接一个LED芯片12。可见一由所述第一导线142分出的LED芯片区域内可包括33个LED芯片12。其中，沿Y方向排布的LED芯片12之间为串联连接，而沿X方向排布的LED芯片12之间为并联连接。与所述第一导线142、第二导线143连接的焊盘图案141的电路连接关系为：焊盘图案141一端连接第一导线142，另一端连接LED芯片12的正极；焊盘图案141的一端连接第二导线143，另一端连接LED芯片12的负极。
在本发明中，如图4B及图4C中所示，焊接同一LED芯片的两个焊盘图案141之间的间距为H1为0.01mm-1mm，优选地，所述间距H1进一步可为0.01mm-0.1mm、0.01mm-0.5mm、0.1-0.6mm、0.2-0.9mm或0.8-1mm等。具体的，所述间距H1可为0.01mm、0.025mm、0.04mm、0.1mm、0.3mm、0.5mm、0.9mm或1mm。
为了使光源组件在单位面积内可放置能达到需求数量的LED芯片12，可进一步对第一导线142与第二导线143的线宽限定为0.01mm-0.5mm，而相邻设置的第一导线142与第二导线143之间的线距0.01mm-1mm。
其中，第一导线142与第二导线143的线宽还可进一步为0.01mm-0.05mm、0.05mm-0.12mm、0.16mm-0.3mm、0.25mm-0.4mm或0.4mm-0.5mm。具体地，所述线宽可具体为0.01mm、0.03mm、0.05mm、0.09mm、0.12mm、0.16mm、0.19mm、0.25mm、0.4mm或0.5mm。相邻设置的第一导线142与第二导线143之间的线距则可为0.01mm-0.05mm、0.05mm-0.08mm、0.16mm-0.3mm、0.25mm-0.8mm或0.8mm-1mm。具体地，所述线距可具体为0.01mm、0.03mm、0.15mm、0.59mm、0.67mm、0.76mm、0.89mm、0.95mm或1mm。
请参阅图5中所示，在本发明中，所述第二导电层15进一步包括多个与外接电路连接的引脚151，及由引脚151延伸出的导 电图案152，所述导电图案152与所述引脚151之间为共平面设置。即，所述引脚151设置在非匀光层覆盖的一面上，且引脚151与LED芯片之间可实现电性连接。其中，导电图案152的具体形状不受限制。
优选地，所述引脚151的数量与上述LED芯片区域的分区数量一致。所述引脚151更优地为成排设于所述载体的同一侧，这样的设置可使所述光源组件10的电路连接关系更为简化，从而可使所述光源组件10更趋向于轻薄化。
所述引脚151可进一步分为正极引脚(未标号)及负极引脚(未标号)，其中，正负极引脚的分布及其具体的数量与LED芯片12的电性连接关系相关。如正极引脚可设置在最边缘处或正极引脚可设置在多个所述负极引脚之间。
请结合图3及图5中所示，所述导电图案152与所述第一导线142或所述第二导线143之间可通过贯穿所述载体11的导电通孔16电性导通。所述导电通孔16可由导电材料填充于贯穿载体11的通孔而形成。所述导电通孔16的具体数量及位置需根据所述光源组件10的电路连接关系而决定。所述导电通孔16的设置，可使设置LED芯片12的一面焊盘图案141的导通线路引至与所述LED芯片12相对的一面上，从而可实现光源组件10中所有的导电线路可设置在匀光层13相对的正投影区域之内，可进一步为实现无边框或窄边框光源显示提供支持。更进一步地，所述焊盘图案141、所述第一导线142、第二导线143、引脚151及导电图案152均设置在所述荧光层131的正投影区域之内。
其中，所述导电通孔16的数量及位置不受限制，只需满足控制区域可正常通电运行即可。通过将所述LED芯片12进行分区控制，可进一步实现对所述LED芯片12的分时及分区驱动。优选地，所述引脚151可依次经所述导电图案152、所述导电通孔16与其对应的电路区域电性连接。
在本发明一些更为优选的实施例中，所述导电图案152可为直接形成于所述载体12上的金属层，所述金属层通过蚀刻形成多个区域。在所述金属层之上还设置有绝缘层，以避免不同导电图案152之间互相干扰。更进一步地，所述金属层的设置，还可对所述LED芯片12在运作过程中产生的热量提供散热，避免由于多个所述LED芯片12同时发光而导致温度过高，从而可延长所述LED芯片12的使用寿命。
请结合图5，在本发明中，多个所述引脚151可进一步包括一A1端及K1-Kn端。其中，K1端-Kn端分别对应多个所述LED芯片12的驱动分区。如在尺寸为66mm*60mm的光源组件10中，为了使其光源组件10的发光效果更好，可将所述LED芯片12分为32个区域，对应的是K1端-K32端。通过外接电路连接A1端及K1端-K32端，从而实现对所述光源组件10的分区控制。
请继续参阅图6A-图6C，在本实施例一个变形实施方式中，其与上述实施例的区别在于：一组导线249由多条第一导线242、多条第二导线243及连接多条第二导线243的总线244组成，其中，如图5B中所示，所述第一导线242与所述第二导线243均为梳齿型，且第一导线242与第二导线243交错设置。同一LED芯片22对应焊接在相邻设置的两个不同焊盘图案241之上，其中一个焊盘图案241与第一导线242连接且电性导通，另一个焊盘图案241与第二导线243连接且电性导通。
与所述第一导线242、第二导线243连接的焊盘图案241的电路连接关系为：焊盘图案241一端连接第一导线242，另一端连接LED芯片22的正极；焊盘图案241的一端连接第二导线243，另一端连接LED芯片22的负极。
在本变形实施方式中，将对应焊接同一LED芯片22的两个不同焊盘图案241定位一组焊盘图案组240，第一导线242与第二导线243之间平行设置的梳齿线上，并列排布多组焊盘图案组240，其中，多组焊盘图案组240为沿同一直线间隔分布。其中，如图6C中所示，在第一导线242与第二导线243的梳齿形状之间平行设置四组焊盘图案组24。
其中，导电通孔26可设置在第一导线242或第二导线243之上。
在本变形实施方式中，可将16个并联的LED芯片形成一个控制区域，在所述第一导线142上设有与正极导线151连接的至少一个导电通孔104，在所述第二导线143上设有与负极导线152连接的至少一个导电通孔104。其中，所述导电通孔104的数量及位置不受限制，只需满足控制区域可正常通电运行即可。通过将所述LED芯片12进行分区控制，可进一步实现对所述LED芯片 12的分时及分区驱动。
在本发明中，形成所述第一导电层14与所述第二导电层15的材料可为铜、铝、金、银、镍、锌、铁、石墨材料，或采用透明导电氧化物。
在将所述LED芯片12焊接在所述焊盘图案141之上之前，还需要在所述第一导电层上进行钢网印刷，其目的是在对应的焊盘图案141上统一印刷上锡膏，再将LED芯片的正负极方式在不同的锡膏焊接点之上，通过回流焊工艺固化。为了在所述载体11上置放更多的LED芯片，且使相邻设置的LED芯片之间的间距更小，在本发明中，选用纳米级别的钢网进行印刷，且所述锡膏的粒径可低至30μm以下。
上述设置的优点在于：在需要设置所述LED芯片12的表面上，通过对焊盘图案的设计，可使相邻设置的所述焊盘图案241之间的距离缩小，对应地，所述LED芯片12的尺寸可进一步缩小，则单位面积内设置的所述LED芯片12的数量会相应地增加。
请继续参阅图7A，在本发明第一具体实施例中，所述匀光层13可为一荧光层131，所述荧光层131覆盖在所有LED芯片12之上，且填充相邻设置的两个LED芯片12之间间隙。即，所有LED芯片12被同一荧光层131覆盖。在本发明此处及以下所述的荧光层131一体成型具体表示为：将固体状态的荧光层12覆盖于所述LED芯片12及所述载体11之上；热压所述荧光层12，使所述荧光层12软化并形成所述荧光层131，多个所述LED芯片12被封装于所述荧光层131之内，即获得所需的荧光层131。
在一些特殊的实施例中，所述荧光层12经过二次热压操作。热压所述荧光层12使其软化并贴覆于所述载体11及固定于所述载体11上的LED芯片12表面，且在相邻LED芯片12之间同样设有所述荧光层131。这样的设置，可使所述LED芯片12发出的光与所述荧光层131中的荧光物质被激发后所产生的光相互配合而获得均一发光效果。具体地，多个所述LED芯片12规律固定于该载体12的表面1201。所述荧光层131与所述载体12在叠加方向上形状匹配并一体成型于所述载体12固定有LED芯片12的表面上，使所述LED芯片12封装于所述荧光层131内形成平面型光源。在本发明中，所述荧光层131与所述载体11的面积一致。
与现有技术相比，在同等面积及相同LED芯片数量的前提下，采用本实施例中所提供的光源组件10所发出的光的光效更高且光利用率更高，光亮度更为均一。
如图7B中所示，为了使所述光源组件10具有更优的发光效，LED芯片12的发光主表面1201距离荧光层131的主发光面1311的距离h1为荧光层131的最小厚度h1。将载体11设有LED芯片12的表面1101至荧光层131的主发光面1311的距离为荧光层131的最大厚度h2。在本发明一些较优的实施例中，所述荧光层131覆盖于所述LED芯片12上的最小厚度h1为0.003mm-0.191mm，所述荧光层131的最大厚度h2为0.004mm-0.2mm。在本发明中，依据所述光源组件10发光强度的需求，调整所述荧光层131的厚度，优选地，为了使发光强度均匀一致，所述荧光层131的最小厚度h1还可为0.08-0.12mm，述荧光层131的最大厚度h2还可为0.15-0.3mm。
更进一步地，依据不同的所述LED芯片12的尺寸要求，所述荧光层131的最小厚度h1可为0.003mm、0.006mm、0.009mm、0.01mm、0.03mm、0.035mm、0.05mm、0.07mm、0.10mm、0.12mm、0.15mm或0.191mm；所述荧光层131的最大厚度h2可具体为0.004mm、0.006mm、0.01mm、0.03mm、0.07mm、0.09mm、0.1mm、0.11mm、0.13mm、0.15mm、0.17mm、0.19mm或0.2mm，
在本发明中，为了使荧光层131对其覆盖之下的所有LED芯片12发出的光线进行有效的匀光，所述荧光层131的最小厚度h1需与相邻设置的LED芯片12之间的间距大小成正相关，相邻设置的LED芯片12之间的间距越小，则相应的荧光层131的最小厚度h1越小，而相邻设置的LED芯片12之间的间距越大，则相应的荧光层131的最小厚度h1越大。具体地，当相应设置的两个所述LED芯片12之间的间距e为0.1mm-1mm时，则对应的所述荧光层131的最小厚度h2为0.1mm-0.2mm。而当相应设置的两个所述LED芯片12之间的间距e为0.01-0.1mm时，则对应的所述荧光层131的最小厚度h2进一步为0.01-0.05mm。
更进一步地，所述荧光层131的最大厚度h2应至少大于所述LED芯片12的厚度。
更进一步地，为了使所述光源组件10具有更优的发光效果，避免所述LED芯片12边缘处发光不均匀的问题，所述荧光层131 的任一边缘与最接近该边缘的所述LED芯片12与该边缘之间的距离为0.002mm-0.1mm，优选地，所述距离可进一步为0.002mm-0.001mm，0.001mm-0.004mm、0.004-0.006mm、0.007-0.01mm、0.01-0.03mm或0.03-0.1mm。
更进一步地，为了使所述光源组件10的发光效果更优，所述LED芯片12的长度与上述距离之间的比例需要满足一定的比例范围。
更进一步地，为了使所述光源组件10获得更优的发光效果，在本发明中一些具体的实施例中，所述荧光层12包括荧光粉组合物、胶体及扩散粒子。
其中，所述LED芯片12为蓝光芯片或近紫外光芯片。
所述荧光粉组合物可包括但不受限于：红光荧光粉：氮氧化物、氟化物、氮化物等之一种或多种；绿光荧光粉：塞隆、硅酸盐等之一种或多种；黄粉：钇铝石榴石、硅酸盐等之一种或多种；蓝粉：铝酸钡、铝酸盐等之一种或多种。
所述胶体可包括但不受限于：有机硅胶和无机硅胶，其中，有机硅胶包括：硅橡胶、硅树脂及硅油中的一种或几种的混合物，无机硅胶包括B型硅胶、粗孔硅胶及细孔硅胶中的一种或几种的混合物。
所述扩散粒子为二氧化硅类、有机硅类、丙烯酸类或碳酸钙类中的一种或几种的组合，其中，所述扩散粒子的粒径为7-20μm。所述扩散粒子的粒径及其数量，会对所述荧光层131对光源的偏转及扩散效果更好，同时能提高光洁度及其透光率。更优地，为了获得更优的混光效果，所述扩散粒子可选用至少两种光折射率不同的粒子进行组合。
其中，所述荧光粉组合物的质量占所述荧光胶组合物与所述胶体总质量的30％-50％。
在本发明一些较优的实施例中，所述荧光粉组合物中包括黄光荧光粉，即所述荧光粉组合物中包括钇铝石榴石、硅酸盐等之一种或两种的混合物，所述LED芯片12优选为蓝色芯片，所述荧光层131中，所述LED芯片12发出蓝光并激发所述荧光粉组合物中的黄粉发出黄光。在所述光源组件10中，所述LED芯片12发出的光线及激发所述荧光粉所发射光线在所述荧光层131中发生漫射，从而形成亮度均匀的白光。
在本发明另外的一些实施例中，所述荧光粉组合物中还可包括红光荧光粉及绿光荧光粉的组合，即所述荧光粉组合物中红光荧光粉可包括氮氧化物、氟化物、氮化物等之一种或多种及绿光荧光粉包括塞隆、硅酸盐等之一种或多种，所述LED芯片12进一步优选为蓝色芯片。
在本发明一些较优实施例中，所述荧光层组合物包括红光荧光粉、绿光荧光粉及黄光荧光粉的组合，所述红光荧光粉包括氮氧化物、氟化物、氮化物等之一种或多种；所述绿光荧光粉包括卤硅酸盐、硫化物、硅酸盐及氮氧化物中的一种或几种的组合；黄光荧光粉：钇铝石榴石、硅酸盐等之一种或多种，所述LED芯片12进一步优选为蓝色芯片。
进一步地，红光荧光粉为氟硅酸钾和氟锗酸钾中的一种或者其组合，绿光荧光粉为塞隆；所述黄光荧光粉为硅酸锶、硅酸镁及硅酸锶钡中的一种或几种的组合。
进一步地，所述荧光层组合物包括质量比为(1～4)∶(0.5～2)∶(0.5～2)的红光荧光粉、绿光荧光粉及黄光荧光粉。
更进一步地，红光荧光粉、绿光荧光粉及黄光荧光粉的质量比为(1～3)∶(0.5～1.5)∶(0.5～1.5)。
在本发明一些具体实施例中，所述红光荧光粉为氟锗酸钾，黄光荧光粉为硅酸盐，绿光荧光粉为塞隆。可以是所述红光荧光粉、绿光荧光粉及黄光荧光粉的质量分别占荧光粉总质量的64％，16％，20％。又可以是所述红光荧光粉、绿光荧光粉及黄光荧光粉的质量分别占荧光粉总质量的58.4％，17.2％，24.4％。还可以是所述红光荧光粉、绿光荧光粉及黄光荧光粉的质量分别占荧光粉总质量的68％，14％，18％。也可以是所述红光荧光粉、绿光荧光粉及黄光荧光粉的质量分别占荧光粉总质量的52％，22％，26％。
优选地，所述红光荧光粉、绿光荧光粉及黄光荧光粉分别占荧光粉总量的60％，18％及22％。
在本发明另一些具体实施例中，所述红光荧光粉为氟硅酸钾，黄光荧光粉为钇铝石榴石，绿光荧光粉为塞隆。可以是所述红光荧光粉、绿光荧光粉及黄光荧光粉的质量分别占荧光粉 总质量的61.2％，19.4％，19.4％。又可以是所述红光荧光粉、绿光荧光粉及黄光荧光粉的质量分别占荧光粉总质量的58％，21％，21％。还可以是所述红光荧光粉、绿光荧光粉及黄光荧光粉的质量分别占荧光粉总质量的55％，23％，22％。也可以是所述红光荧光粉、绿光荧光粉及黄光荧光粉的质量分别占荧光粉总质量的67％，17％，16％。
优选地，所述红光荧光粉、绿光荧光粉及黄光荧光粉分别占荧光粉总量的60％，20％及20％。
为了使所述载体11与所述荧光层131之间贴合更为紧密，且不会由于弯折为出现开胶的现象。所述荧光层131与所述载体11之间应具有基本相同的挠度。因此，在选择所述载体11的材质时，需要与荧光层131的材料一并选择。
请参阅图8A，在本发明第二具体实施例中，所述匀光层13可为一光学膜片132，所述光学膜片131可为扩散膜或增亮膜等中的一种或几种。本具体实施例与现有技术的区别在于，所述LED芯片12为直接将与所述光学膜片131无间隙贴附，从而可进一步减少所述光源组件10的整体厚度。
如图8B中所示，在本发明一些特殊的实施例中，所述匀光层13可进一步为微透镜层133，所述微透镜层133上设有与LED芯片12对应设置的多个微透镜1331。所述LED芯片12发出的光线进入所述微透镜1331之内，实现光学折射与反射，从而获得匀光的效果。所述微透镜层133的厚度及单个微透镜1331的尺寸及分布位置与LED芯片12分布相关。
在本发明第三具体实施例中，所述匀光层13为荧光层131与光学膜片132的结合，其实现方式可为：荧光层131直接覆盖在所有LED芯片12之上且填充LED芯片12之间的间隙，光学膜片132直接设置在荧光层131之上。
在本发明一些特殊的实施例中，其具体实现的方式还可为：在LED芯片12之上直接贴合光学膜片13，再在光学膜片13远离所述LED芯片12的一面上形成一荧光层131。
在本发明一些特殊的实施例中，在覆盖于所述LED芯片12的荧光层131之上可直接贴附设置所述微透镜133，从而可进一步增强所述光源组件10发出光线的均匀性。
在本发明中，所述匀光层13中具体层结构的组合方式，可根据所述光源组件10所需达到的发光效果及LED芯片12具体分布方式来调整，其不同的组合方式可达到不同的发光效果。
在本发明中上述的实施例中，所述光源组件10的厚度可为0.06mm-1mm。优选地，所述光源组件10的厚度为0.06mm-0.1mm、0.1mm-0.5mm、0.2mm-0.8mm或0.8-1mm，所述光源组件10的厚度具体为0.06mm、0.1mm、0.127mm、0.254mm、0.35mm、0.5mm、0.8mm或1mm。
请参阅图9A及图9B，在本发明另一变形实施例中，所述光源组件11进一步包括一白边301，所述白边301形成于载体11之上且围绕所述荧光层131设置，所述白边301的外围与所述载体11的面积一致。
在本发明中，所述白边301是在所述荧光层131形成之后，通过贴覆或涂覆的方式，在所述荧光层131的侧面形成的，并通过切割的方式，使所述白边301在满足反射所述荧光层131侧面发光的同时，又可以具有较薄的厚度，以实现所述光源组件10中荧光层131的发光面的边缘与所述载体11设置有LED芯片12的一面的边缘处基本一致。
所述LED芯片12激发所述荧光层131向侧面发出的光线，由所述白边301反射并经所述荧光层111的发光面1101呈角度射出。即在本发明中，所述白边301可用于将所述LED芯片12向所述侧面发出的光线进行反射并经由所述荧光层131的发光面1101呈角度射出所述光源组件10，从而实现光源的有效利用。
在本发明中，所述白边301的厚度为0.001mm-0.1mm，更进一步地，所述白边301的厚度可为0.001mm-0.01mm、0.002mm-0.008mm或0.01mm-0.09mm。在本发明一些具体的实施方式中，所述白边301的厚度可具体为0.001mm、0.002mm、0.05mm、0.1mm等。上述仅仅是作为举例，不作为本发明的限定。
请参阅图10A，本发明第二实施例提供另一种光源组件40，所述光源组件40包括载体41及多个LED芯片42，所述载体41包括叠加设置的两层膜层411，在两层膜层411之间设有一导电层412，所述导电层412包括多个焊盘图案413，焊盘图案413之间通过导线414电性连接，其中一层膜层411上开设有使对应焊盘图案413外露的多个窗口419。
请继续结合图10B与图10C中所示，所述LED芯片42的正极和负极分别通过锡膏焊接固定在不同的焊盘图案413之上；所述光源组件40还包括一荧光层43，同一荧光层43填充所述LED芯片42之间的间隙且覆盖所有LED芯片42。
所述膜层411可优选为柔性材料，所述膜层411的材质可包括但不受限于：聚酰亚胺、聚对苯二甲酸乙二醇酯、芳酰胺纤维酯或聚氯乙烯中的任一种。
继续如图10C中所示，为了使所述光源组件40的发光亮度及发光均匀度更优，在本发明中，且避免光源组件40出现暗区，在开设有窗口419的膜层411上进一步可覆盖一反射层415，所述反射层415设于膜层的非窗口处。优选地，所述反射层415
如图10D中所示，单个所述焊盘图案413可具体包括铜箔层4131及设置在铜箔层4131之上的镀银层4132，所述铜箔层4131可起到导电的作用，可将焊接在所述焊盘图案413之上的LED芯片42与导线414电性导通。而镀银层4132的设置，可进一步提高焊盘图案413对LED芯片42发出的光线的发光效果，从而可增强所述光源组件40的光效。
优选地，所述反射层415为白油层、铝箔反射膜层或银反射膜层中的一种或多种的组合。
请继续参阅图10A，所述光源组件40还包括与外设电路连接的引脚417，所述引脚417与导电层412同层设置或与导电层412叠层设置。由于所述膜层411为柔性可折叠材料，因此，可将其将为开设窗口419的膜层折叠至所述导电层412正投影区域之内，从而可使所述光源组件40的发光面积与载体41的整体面积一致。
在本实施例中一些较优的实施例中，为了获得更优的发光效果，所述LED芯片42可为阵列式分布，相邻设置的两个LED芯片42之间的间距为0.01mm-1mm。
为了获得更好的发光效果，所述光源组件40与单个所述LED芯片42均为长方形，所述光源组件40的长边与所述LED芯片42的长边平行设置，所述光源组件40的短边与所述LED芯片42的短边平行设置；所述LED芯片42的长度0.01mm-1mm，所述LED芯片42的宽度为0.01mm-0.5mm。
其中，有关LED芯片42的长度、宽度及其分布间距的具体参数与上述第一实施例中的相关参数一致，在此不再赘述。
请参阅图11A，本发明第三实施例提供一种显示装置100，所述显示装置100包括一具有连续发光面的光源组件10及显示组件110，所述光源组件10的发光面与所述显示组件110无间隙贴合。
在发明一些优选的实施例中，所述荧光层131远离所述载体11的一面即为所述光源组件10的发光面。所述荧光层131的发光面与所述显示组件110无间隙贴合。在本实施例中，所述载体的边缘处与所述显示组件的边缘处齐平。更进一步地，所述荧光层131的面积与所述载体11的面积一致。
如图11B中所示，优选地，所述显示装置100进一步包括电源组件192及驱动组件191，所述驱动组件191可用于为所述光源组件10提供控制信号，使所述光源组件10实现分区域进行点亮；所述电源组件192用于为所述光源组件10提供电能源驱动，所述驱动组件191还可控制电源组件192的启动或关闭，还可进一步控制电源组件192的输出功率。
所述驱动组件191与引脚(151或417)连接，以对所述LED芯片进行分区驱动控制。
具体地，在本发明一些较为优选的实施例中，所述控制组件192采用动态背光驱动模式对所述光源组件10中的多个所述LED芯片12进行驱动。
在本发明中，所述显示组件109可为需要提供背光源的显示装置，其包括但不受限于：DSTN-LCD显示器(Dual Scan Tortuosity Nomograph-Liquid Crystal Display，双层超扭曲向列型液晶显示)、TFT-LCD显示器(thin filmtransistor-Liquid Crystal Display，薄膜晶体管型液晶显示)等。需要特别说明的是，上述列举的显示组件109种类仅为说明，而不作为本发明中对显示组件109种类的限制。
所述光源组件10的边框与所述显示组件的显示区域的边缘的位置一致。更进一步地，所述显示组件110的显示区域的面积与所述荧光层131的发光面的面积之间比例为1∶(0.9-1.1)。优选地，所述显示组件110的显示区域的面积与所述荧光层131的发光面的面积之间比例为进一步为1∶(0.95-1.05)。更优地，所述显示组件110的显示区域的面积与所述荧光层131的发光面 的面积之间比例为1∶1。即所述荧光层131的发光面的面积及设有所述LE芯片12的载体11表面的面积一致。
本发明中所述显示装置100中所包括的光源组件10具有如上述第一实施例及第二实施例所包括的所有技术特征，在此不再赘述其相同部分。
请参阅图12，本发明第四实施例提供一种电子设备40，所述电子设备40包括一支撑体41，所述支撑体41内具有一可收容上诉第二实施例中所述显示装置100的腔体。所述显示装置100面向用户的一面上还设有一保护盖板42。
所述支撑体41进一步包括对称设置在所述支撑体41侧壁上的凸起411，所述凸起411可为所述显示装置100提供支撑。所述凸起411进一步在所述显示装置100形成一内部空间。为了充分利用该电子设备40的内部空间，避免所述电子设备40的体积过大，从而降低所述电子设备40的便携性，如所述电源组件192、驱动芯片191等内部器件可设于所述内部空间内。
如图中所示，为了进一步提高所述电子设备40中所述显示区域的屏占比，所述显示装置100中的所述显示组件109通过柔性电路板199与所述驱动芯片191电性连接，由于所述柔性电路板199的可挠性较好，因此，所述支撑体41的侧壁与所述显示装置100的侧面的距离P可忽略不计。
与现有电子设备不同之处在于：本发明所提供的所述电子设备40中显示装置100与所述支撑体41之间在显示功能上彼此独立，因此，所述支撑体41仅起到支撑所述载体11的作用，而不会对所述显示装置100的显示效果造成影响，所述支撑体41也不会对所述光源组件10的发光效果造成影响。
为了使所述光源组件10在局部弯曲后仍能保持较好的发光效果，所述光源组件10需满足上述的分布密度要求。
如图13中所示，所述载体11可为柔性载体。在本实施例中，所述光源组件10整体弯曲时，所述载体11在应力作用下弯曲一定的弧度。在弯曲过程中，所述荧光层131始终贴合在所述载体11固定有所述LED芯片12的一面上，所述荧光层131随着所述载体11弯曲的方向逐渐弯曲，且所述荧光层131弯曲的弧度与所述载体11的弯曲的弧度相匹配。即，所述荧光层131及所述载体11的挠度基本相同。其中，挠度是指弯曲变形时横截面形心沿与轴线垂直方向的线位移。
在本发明一些较优的实施例中，所述反射膜17与所述载体11、所述匀光层13之间弯曲的挠度一致。
在本实施例中，所述电子设备40包括如上所述的任一实施例中所述光源组件10。本发明所提供的所述光源组件10与现有技术中常用的侧边发光式光源或直下发光式光源相比，不会在电子设备40显示组件边缘区域产生暗区，因此，可做成无边框或者窄边框的电子设备40。
更进一步地，在本发明另外一些实施例中，所述电子设备40可不设置收容所述显示装置100的边框，所述驱动芯片191与所述电源组件192可设置在所述显示装置100的侧面，以获得厚度更薄的电子设备。
更进一步地，在本发明一些特殊的实施例中，所述电子设备40可为柔性显示组件的电子设备40a。通过选用上述可弯曲、折叠或卷曲的载体，可获得具有可弯曲性能的所述光源组件10a，从而可制备获得具有柔性显示组件的电子设备。
请参阅图14A，在本发明的第五实施例提供一种新型的显示装置70，其包括载体71、设置在载体71上的多个LED芯片72、驱动电路79、覆盖在所述LED芯片72及载体71之上的荧光层73，所述多个LED芯片72界定为多个区701，所述多个区701内的LED芯片72被所述驱动电路79分区驱动控制以用于显示图像，多个所述LED芯片72发出的光经同一荧光层73进行匀光后形成的发光面731。
所述显示装置70柔性可折叠；所述单个区701内包括一个或多个LED芯片72，同一区701内的LED芯片72同步驱动。
相邻设置的两个LED芯片72之间的间距为0.01mm-0.75mm，所述LED芯片72为长方形，所述LED芯片72的长度0.01mm-1mm，所述LED芯片72的宽度为0.01mm-0.5mm。
如图14B中所示，在所述荧光层73之上直接贴附一微透镜层75，所述微透镜层75上述设有与LED芯片72对应设置的多个微透镜75。
继续如图14C中所示，所述显示装置70界定有阵列排布的多个像素点79，每一像素点79对应单个LED芯片72或每一像素点79 对应三个LED芯片72且该三个LED芯片72发光颜色不同。优选地，三个LED芯片72的颜色可为近紫外光、蓝光灯颜色。最佳地，三个LED芯片72的颜色为三原色。
所述LED芯片72阵列排布，所述驱动电路包括阵列排布的多个TFT，多条第一驱动线及多条第二驱动线，每一LED芯片连接至TFT的漏极，与LED芯片连接的TFT的栅极线连接至第一驱动线，与LED芯片连接的TFT的源极极线连接至第二驱动线，位于同排的LED芯片所连接的TFT之栅极连接至同一条第一驱动线，位于不同排的LED芯片所连接的TFT之栅极连接至不同的第一驱动线，位于同排的LED芯片所连接的TFT之源极连接至同一条第二驱动线，位于不同排的LED芯片所连接的TFT之栅极连接至不同的第二驱动线。
在本实施例中，针对所述显示装置70中载体71、焊盘图案7121、导线7122等元件的相关限定与上述第一至第四实施例中所述光源组件及显示装置、电子设备中的相关限定一致，在此不再具体说明，其主要内容如下：
所述载体71包括相对设置的两面，其中一面阵列设有多个LED芯片72及荧光层73；另一面上设有多个用于与外接电路连接的引脚，所述引脚与所述LED芯片72之间电性连接。
所述载体71包括叠加设置的两层膜层，在两层膜层之间设有一导电层，所述导电层包括多个焊盘图案，焊盘图案之间通过导线电性连接，其中一层膜层上开设有使对应焊盘图案外露的多个窗口，所述LED芯片的正极和负极对应焊锡在不同的焊盘图案之上。
在本发明另外的实施例中，所述显示装置70中，每平方厘米内像素点的个数为10-400个。在一个载体上设有LED芯片72的一面上设有多个焊盘图案及多组导线，所述LED芯片的正极和负极分别对应焊接在相邻设置的两个焊盘图案之上，所述导线连接部分或全部焊盘图案。
请继续参阅图14D，更进一步地，所述显示装置70进一步包括太阳能板707，所述太阳能板707通过驱动电路为LED芯片72供电。
在本发明一些更为优选的实施例中，所述显示装置70进一步包括一保护层708，所述保护层708将显示装置70完全密封，或将显示装置70除荧光层73以外的部位密封；所述保护层的设置可对所述显示装置70中的LED芯片进行保护，以延长所述显示装置70的使用寿命。
所述显示装置70进一步包括固定装置709，所述固定装置709设置在载体71远离发光面731的一侧，所述显示装置70通过固定装置709固定于其他装置上。进一步地，所述固定装置709可为粘接结构、卡扣结构、缝合结构等。
如图15中所示，本发明第六实施例提供一种穿戴装置80，其可由上述任一种显示装置70制成；或包括穿戴装置主体801以及设置在穿戴装置主体801上的显示装置70。如所述穿戴设置80可为衣服，可将上述的显示装置70直接缝合在衣服之上，通过配以电池或太阳能电池板，以使所述显示装置70通电发亮。
请参阅图16，在本发明的第七实施例中提供一种光源组件的制备方法，为了使得在载体上设置更多的LED芯片，以保证光源组件10的发光均匀性，本发明提供另一种将LED芯片固定在所述载体上的固定方式，具体步骤如下：
步骤V101，提供一具有载体及在载体上的其中一面上形成焊盘图案，另一面则形成与外接电路连接的引脚；
步骤V102，在焊盘图案的对应位置上形成焊锡点；
步骤V103，将LED芯片放置到对应的焊锡点之上，使得LED芯片的正极和负极对应焊接在相邻设置的两个不同的焊盘图案之上；
步骤V104，以回流焊方式将LED芯片固定在载体之上。
步骤V105，在多个LED芯片之上覆盖形成同一预制荧光层，获得所需光源组件。
上述步骤还可进一步分为如下两种情况：当所述载体为单层结构时，则上述步骤V101可具体为：
步骤V111a，在载体对应的位置形成导电通孔；
步骤V112a，在载体相对的两个主表面上分别形成第一导电层和第二导电层，其具体为形成铜导电线路后，在铜导电线路上镀银，并在第二导电层上非引脚的区域涂敷白油。
如图17中所示，当所述载体为双层薄膜，则上述步骤V101可包括以下步骤：
步骤V111b，提供两层薄膜，并在两层薄膜相对位置上形成导电通孔；
步骤V112b，在一层薄膜的一主表面上形成多个焊盘图案及连接焊盘图案的多组导线，另一层薄膜的主表面上形成与外接电路连接的引脚；
步骤V113b，将两个薄膜未形成导电线路的两面相互压合。
上述双层基板均采用聚酰亚胺材料，即所述LED芯片直接焊接在FPC之上。
在本发明一些优选的实施例中，所述步骤V102可进一步为：
通过钢网印刷，在第一导电层上对应的位置印刷锡膏形成焊接点；具体地，使用锡膏机通过钢网将锡膏印刷到设置有焊盘图案的载体上，使得锡膏涂覆在焊接点上；
在本发明一些优选的实施例中，所述步骤V104可进一步为
以回流焊的方式将LED芯片进一步固定在载体上；采用氮气回流炉实现对LED芯片的进一步固定，其氧含量为＜500ppm，回流效率为200K/H，焊接LED芯片的低温锡膏温度为200℃，高温锡膏温度为260℃。
在上述步骤V104之后且在步骤V105之前，还可进一步包括步骤：
步骤V106，在载体设置有LED芯片的一面上放置反射膜，所述反射膜上设有与LED芯片的位置和数量对应的窗口，LED芯片可通过该窗口外露。所述反射膜可用于将LED芯片的发现均匀反射出去，从而可增强所述光源组件的光效。
请继续结合图18及图19，在上述步骤V105中，热压所述荧光膜，使所述预制荧光膜软化并形成一荧光层131的步骤具体包括：
步骤T101，一次热压，使所述荧光层12由固体状态转化为半固体状态，所述荧光层12大致贴合于所述载体表面并包覆所有的LED芯片12；
步骤T102，二次热压，使所述荧光层12由半固化状态转化为胶体状态，以使所述荧光层12均匀并完全贴合在所述载体11与所述LED芯片12表面；
步骤T103，进行二次热压后，使所述荧光层12冷却固化，获得所需的荧光层131。
在本实施例中，即为将所述荧光层通过热压工艺在所述载体的固定有多个所述LED芯片的主表面上成型。所述荧光层覆盖固定于所述载体上的所有LED芯片。与现有技术荧光胶覆盖在单个LED芯片不同，本发明中，由于所述荧光层覆盖所述LED芯片，可使所述光源组件发光效果更为均一。
更进一步地，所述一次热压的温度为50-80℃，所述一次热压的时间为10-20min；所述二次热压的温度为120-180℃，热压时间为15-40min；所述一次热压与所述二次热压均在气压小于等于10torr的环境下进行。
在本发明一些更优的实施例中，为了获得贴合效果更优的所述光源组件10，还可进一步对热压的温度计热压的时间进行限定。具体为：所述一次热压的温度为57-63℃，所述一次热压的时间为13-17min；所述二次热压的温度为134-167℃，热压时间为20-37min；所述一次热压与所述二次热压均在气压小于等于7torr的环境下进行。
在本实施例中，所述LED芯片为蓝光芯片或近紫外光芯片，所述荧光层包括黄色荧光粉，红色荧光粉和绿色荧光粉的组合，黄色荧光粉、红色荧光粉和绿色荧光粉的组合中的任一种。其中，有关黄色荧光粉、红色荧光粉和绿色荧光粉的组合，黄色荧光粉、红色荧光粉和绿色荧光粉的组合中，具体荧光粉的选择及其配比如本发明第一实施例中所述，在此不再赘述。
请参阅图20，在本发明的第八实施例提供一种光源组件的制备方法Q10，其包括以下步骤：
步骤Q101，提供一导电层，在导电层上形成多个焊盘图案及连接焊盘图案的多组导线；
步骤Q102，在导电层的上下表面设置两层薄膜；在其中上层薄膜上对应焊盘位置形成多个使焊盘图案外露的窗口；
步骤Q103，在对应的焊盘图案上形成焊锡点；
步骤Q104，将LED芯片放置到对应的焊锡点之上，以使LED芯片的正极和负极对应焊接固定在相邻设置的两个不同的焊盘图案之上；及
步骤Q105，在多个LED芯片之上覆盖形成同一预制荧光层后，获得所需光源组件。
在本实施例中，在所述导电层形成的焊盘图案之上形成焊锡点、固定LED芯片及形成预制荧光层的具体步骤，与上述第五实施例中的一致，在此不再赘述。
所述光源组件的制备方法Q10可制备获得柔性可折叠的光源组件。
为了更进一步地针对获得分布密度较小的光源组件，其进一步需要对焊盘图案之间的间距即其分布的密度、导线的线宽进行限定，以在有限的空间中有效地放置LED芯片，实现光源组件的均匀发光。
在本发明中，为更进一步对本发明所提供的光源组件及显示装置中可获得更优的发光效果进行验证，将本发明所提供的光源组件与现有的光源进行对比测试，其中，现有的光源包括侧边发光式光源及直下发光式光源，基于《LED显示组件通用规范SJ/T 11141-2003》对本发明所提供的光源组件、现有的侧边发光式光源及直下发光式光源分别进行亮度、光效及光通量的测试，其中，上述本发明所提供的光源组件、现有的侧边发光式光源及直下发光式光源均采用含有蓝色芯片及黄色荧光粉，其沿所述显示模组长边分布的LED芯片的数量相同，通入相同的电量后进行测试并进行记录。
具体的实验结果如表1中所示：
表1，本发明所提供的光源组件、现有侧边发光式光源及直下发光式光源的亮度、光效及光通量实验结果
Figure PCTCN2017105194-appb-000001
其中，本发明所提供的光源组件中LED芯片为圆形，其直径为0.01mm，相邻设置的两个LED芯片之间的间距为0.03mm，所述荧光层的最小厚度h1为0.06mm，所述光源组件的整体厚度为0.2mm。所述光源组件的总发光面积为66*60mm，每平方毫米内设置50颗LED芯片。
上述三个测试组的发光面积一致。
从表1中可以看出，本发明所提供的光源组件的亮度、光效较现有的光源可提高1/3，所述光源组件较现有光源的光通量可提高1.5倍。
为了进一步验证，将本发明所提供的第一实施例中所述显示装置100的发光均匀度进一步的检测。对上述三个测试组进行亮度均匀度的测试。测试方法如下：选取多个个测试点，测试点均匀分布在所述发光区域内，对多个个测试点进行亮度的检测，并进行记录。
所述测试点的选择需要依据实际进行测试的显示装置的大小进行调整，如针对显示装置的大小可将测试点定位6个、9个、10个、13个或30个。
通过将测试所获得的每个测试点的亮度进行比较，以获得针对整个显示装置的亮度均匀度。
表2，本发明所提供的光源组件、现有侧边发光式光源及直下发光式光源的亮度均匀度实验结果
Figure PCTCN2017105194-appb-000002
基于上述的实验，可见本发明所提供的光源组件无论是从亮度、光效或光通量，以及亮度均匀度进行比较，本发明所提供的光源组件均优于现有的侧边发光式光源或直下发光式光源。
与现有技术相比，本发明所提供的光源组件及其显示装置具有如下的有益效果：
本发明提供一种光源组件，其包括多个所述LED芯片发出的光经同一荧光层进行匀光后形成一连续的发光面，所述发光面的面积与所述荧光层远离所述LED芯片的一面的面积相等；所述发光面与所述载体承载LED芯片的一面的面积之比为1∶(0.9-1.1)。与传统的侧发光光源组件或直下式发光组件相比， 本发明所提供的光源组件实现窄边框甚至无边框，且光源组件的发光效果更优。
更进一步地，与现有主流的OLED屏相比，本发明所提供的光源组件可配合传统的LCD屏使用，为其提供低功耗、稳定且发光均匀的背光源组件，为实现大屏占比显示提供一种经济、产能良品率高且推广性强的替代方案。
本发明所提供的光源组件中，所述膜层为柔性材料，所述膜层可进一步优选为柔性材料。所述膜层为柔性可折叠，即由其制成的光源组件也可具有轻薄、柔性、可折叠的特点，因此，所述光源组件可为显示屏提供多样化的背光源及显示效果。
单个焊盘图案可由铜箔层及设置在其上的镀银层组成，所述LED芯片可设置在镀银层之上。所述铜箔层可提供稳定有效的电路连接关系，而镀银层的设置，可提高焊盘图案的光反射率，从而可避免焊盘图案中铜箔层吸光，而导致所述光源组件的显示出现暗区，从而可进一步提高光源组件的发光均匀度。
为了进一步提高所述光源组件的发光强度，还可在设有LED芯片的一层薄膜表面上非窗口处形成一反射层，所述反射层可进一步为所述反射层为白油层、铝箔反射膜层或银反射膜层。上述反射层的设置，可进一步提高未开设窗口的膜层表面的光发射率，避免LED芯片发出的光源由膜层吸收，而出现暗区，更进一步地，还可通过白油层的设置，进一步提高所述LED芯片的整体发光效果，提高发光的均匀度。
为了使所述光源组件可适用于更多尺寸要求的显示装置及电子设备中，可进一步将光源组件与外接电路连接的引脚设置在与导电层同层设置或与导电层叠层设置。由上述的膜层较薄，则所述引脚可通过膜层折叠，设置在所述导电层正投影区域之下。从而使光源组件的发光面与所述载体的整体面积一致。
在本发明中，为了达到更优的发光效果，所述光源组件中LED芯片优选为阵列分布，其中，为了使所述荧光层的厚度相应较小，相邻设置的两个LED芯片之间的间距可为0.01mm-1mm，由于荧光层的厚度大小与两个LED芯片之间的间距大小相关，因此，可进一步通过调节两个LED芯片之间的间距进一步对光源组件的厚度进行调整，以满足制备获得轻薄化且光效均匀的光源组件。
进一步限定所述光源组件的长边与所述LED芯片的长边平行设置，所述光源组件的短边与所述LED芯片的短边平行设置，使单颗LED芯片的发光面与光源组件的整体发光面相匹配，从而充分利用LED芯片的光效效果，从而得到更均匀的发光效果。更进一步地，有关LED芯片的尺寸限定，可获得较优发光效果。同时，也可合理利用LED芯片，以减少LED芯片的使用量及光源组件的制备成本，从而使本发明所提供的光源组件使用面更广。
本发明所提供的显示装置，多个所述LED芯片被封装于同一荧光层之内，形成平面型光源。在本发明中，所述荧光层远离载体的一面与显示屏的显示面积相当，所述荧光层与所述显示组件无间隙贴合，无需设置导光板及反射板即可具有较优的发光效果，且可为显示屏提供均匀面光源。更进一步地，由于采用上述方法制备获得的所述光源组件在保证较优的发光效果的前提下，无需设置围框等辅助结构即可获得一体成型且具有导电结构的荧光层，简化工艺步骤。本发明所提供的显示装置可作为OLED显示屏的替代品，从而为获得全面屏及轻薄化的显示装置及其电子设备提供一可行性高、成本较低且良品率高的解决方案。
本发明所提供的显示装置中，所述LED芯片按照一定排布规律固定在所述载体之上，所述载体可直接作为导电使用，即所述载体可直接为柔性电路板；进一步地，将所述固体状态的荧光膜覆盖于所述LED芯片及所述载体之上；热压所述荧光膜，使所述荧光膜软化并形成一荧光层，所述光源组件中所述LED芯片全部封装于所述荧光层中，所述LED芯片发出的光与所述荧光粉组合物被激发后所发射的光经过漫射后形成均匀的白光，因此，无需设置导光板及反射板，即可获得较优的发光效果，所述光源组件的结构及制备工艺简单。
此外，由于所述LED芯片全部封装于同一荧光层中，且所述LED芯片可实现均匀发光且具有一定的光线折射空间，所述LED芯片与所述扩散片无间隙贴合设置，从而可进一步减少所述背光模组的厚度，简化所述背光模组的结构，便于所述背光模组的使用与组装。
所述光源组件的制备方法，其对具有两层膜层的载体形成 焊盘图案、形成焊锡点，在焊锡点上固定LED芯片及在多个LED芯片之上覆盖形成荧光层，为制备获得轻薄化且发光均匀的光源组件提供的一个可行的方法，所述制备方法可实现直接在FPC上形成LED芯片，从而获得具有柔性可折叠的光源组件。本发明所提供的方法可行性高、成本较低且良品率高，具有较大的推广价值。
更进一步地，通过对所述光源组件中基板材料的优选，本发明所提供的光源组件还可适用于可弯曲显示屏中，且可在保证显示画质和宽泛的色彩显示范围的同时，为可弯曲液晶组件提供发光均匀的光源。
在本发明中，由于无需设置现有光源中所必须的导光板、反射板、透射板等，可大大减小光损耗，即可在提供相同发光亮度的条件下，所述光源组件的耗电量远小于现有技术的耗电量。即采用本发明所提供的技术，可在不增加耗电量情况下提高所述光源组件的亮度，通过采用新型的光源组件，可大大降低所述电子设备的耗电量及发热量，从而提高所述电子设备的使用性能。
本发明提供一种光源组件，所述LED芯片的正极和负极分别对应焊接在相邻设置的两个焊盘图案之上，所述导线连接部分或全部焊盘图案；单颗所述LED芯片的正投影面积大于等于LED芯片对应的两个焊盘图案所占区域面积，基于上述的结构限定，可在同一面积大小的载体之上设置更多的LED芯片且不会由于焊盘图案及导线的设置而现实LED芯片的分布，从而可满足各种发光效果及均匀度的要求。与传统的侧发光光源组件或直下式发光组件相比，其分布密度可更小，且不会由于LED芯片间距过大而导致暗区的出现。
更进一步地，与现有主流的OLED屏相比，本发明所提供的光源组件可配合传统的LCD屏使用，为其提供低功耗、稳定且发光均匀的背光源组件，为实现大屏占比显示提供一种经济、产能良品率高且推广性强的替代方案。
本发明所提供的显示装置，多个所述LED芯片被封装于同一荧光层之内，形成平面型光源。在本发明中，所述荧光层远离载体的一面与显示组件的显示面积相当，所述荧光层与所述显示组件无间隙贴合，无需设置导光板及反射板即可具有较优的发光效果，且可为显示组件提供均匀面光源。
本发明所提供的光源组件中，LED芯片的宽度大于任一所述焊盘图案的宽度，从而可克服现有技术中有焊盘图案过大而导致LED芯片之间的间距过大的问题。
为了更进一步地针对获得分布密度较小的光源组件，其进一步需要对焊盘图案之间的间距即其分布的密度、导线的线宽进行限定，以在有限的空间中有效地放置LED芯片，实现光源组件的均匀发光。
在本发明中，针对焊盘图案及导线之间连接关系的限定，可在满足LED芯片分布数量需要的同时，可通过调整其电路连接关系，以使光源组件的电压及电流输出满足需要，以便更好地应用于各种显示装置及电子设备中。
所述荧光层之上还可直接贴附一微透镜层，所述微透镜层上还进一步设有与LED芯片对应设置的多个微透镜，所述微透镜层的设置，可进一步提高所述光源组件的发光均匀度及发光亮度，从而可节省LED芯片使用量及光源组件的整体能耗。
所述载体可包括叠加设置的两层柔性膜层，在两层柔性膜层之间设有一导电层，所述导电层由所述多个焊锡图案与多组导线组成，LED芯片可对应焊接在所述焊锡图案之上。通过在两个膜层之间设置导电层，可进一步减少载体的整体的厚度，从而更进一步地缩小所述光源组件的整体厚度。与传统的侧发光光源组件或直下式发光组件相比，本发明所提供的光源组件可在保证其发光效果的同时，实现光源组件的可挠，从而可配合窄边框甚至无边框的显示装置的制备。
更进一步地，与现有主流的OLED屏相比，本发明所提供的光源组件可配合传统的LCD屏使用，为其提供低功耗、稳定且发光均匀的背光源组件，为实现大屏占比显示提供一种经济、产能良品率高且推广性强的替代方案。
本发明还提供一种显示装置，其包括显示组件及上述的光源组件，其中光源组件可直接贴附于所述显示组件。与现有的显示装置相比，所述光源组件的厚度明显小于现有背光模组，且由于所述光源组件为正面发光，因此，相较于现有背光模组具有更高的亮度及更好的均匀度。
本发明提供一种显示装置，其包括覆盖在所述LED芯片及载体之上的荧光层，所述多个LED芯片界定为多个区，所述多个区内的LED芯片被所述驱动电路分区驱动控制以用于显示图像，多个所述LED芯片发出的光经同一荧光层进行匀光后形成的发光面。在本发明中，所述LED芯片可直接显示图像。所述显示装置可作为OLED显示装置的替代方案，从而为获得大屏及轻薄化的显示装置及其电子设备提供一可行性高、成本较低且良品率高的解决方案。
更进一步地，所述显示装置进一步为柔性可折叠，且单个区内包括一个或多个LED芯片，同一区内的LED芯片同步驱动。通过柔性可折叠，可拓展所述显示装置的使用范围和具体的使用场景。而同一区内单个LED芯片或全部LED芯片同时驱动，可进一步提高所述LED芯片直接显示图像的可控度及显示的多样性。
相邻设置的两个LED芯片之间的间距为0.01mm-0.75mm，所述LED芯片为长方形，所述LED芯片的长度0.01mm-1mm，所述LED芯片的宽度为0.01mm-0.5mm。与现有的LED显示相比，本发明所提供的显示装置的显示密度更大，其显示精细度更高，所述显示装置可作为如手持移动设备的显示屏。更进一步地，所述显示装置由于是整面发光，其相对于现有显示屏显示，其光照均匀度更好。
在所述荧光层之上贴附微透镜层，从而可进一步提高所述显示装置的显示亮度及显示效果。所述显示装置界定有多个阵列排布的像素点，每个像素点可对应单个LED芯片或对应三个LED芯片，为了使所述显示装置获得最佳的显示效果，可进一步将LED芯片作为像素点进行驱动，以实现显示装置多样化的显示效果。在本发明中，每一LED芯片连接至TFT的漏极，与LED芯片连接的TFT的栅极线连接至第一驱动线，与LED芯片连接的TFT的源极极线连接至第二驱动线，位于同排的LED芯片所连接的TFT之栅极连接至同一条第一驱动线，位于不同排的LED芯片所连接的TFT之栅极连接至不同的第一驱动线，位于同排的LED芯片所连接的TFT之源极连接至同一条第二驱动线，位于不同排的LED芯片所连接的TFT之栅极连接至不同的第二驱动线。通过这样的连接设置，可实现对LED芯片的有效控制。
所述载体包括相对设置的两面，其中一面阵列设有多个LED芯片及荧光层；另一面上设有多个用于与外接电路连接的引脚，所述引脚与所述LED芯片之间电性连接。通过将引脚引至与LED芯片设置相对的一面上，可对应制备获得窄边框或无边框显示装置。
所述载体可包括叠加设置的两层柔性膜层，在两层柔性膜层之间设有一导电层，所述导电层由所述多个焊锡图案与多组导线组成，LED芯片可对应焊接在所述焊锡图案之上。通过在两个膜层之间设置导电层，可进一步减少载体的整体的厚度，从而更进一步地缩小所述光源组件的整体厚度。与传统的侧发光光源组件或直下式发光组件相比，本发明所提供的光源组件可在保证其发光效果的同时，实现光源组件的可挠，从而可配合窄边框甚至无边框的显示装置的制备。
更进一步地，与现有主流的OLED屏相比，本发明所提供的光源组件可配合传统的LCD屏使用，为其提供低功耗、稳定且发光均匀的背光源组件，为实现大屏占比显示提供一种经济、产能良品率高且推广性强的替代方案。
所述显示装置进一步包括太阳能面板，所述太阳能面板为所述LED芯片提供电能源，从而可实现显示装置的自发光，以使所述显示装置具有更广的适用范围。
本发明还提供一种穿戴装置，所述显示装置可固定在穿戴装置主体之上，穿戴装置主体包括如衣服、帽子、鞋子、手表或书包等，由于所述显示装置轻薄，因此可直接缝制在所述穿戴装置主体之上。
以上所述仅为本发明的较佳实施例而已，并不用以限制本发明，凡在本发明的原则之内所作的任何修改，等同替换和改进等均应包含本发明的保护范围之内。

Claims (15)

  1. 一种光源组件，其特征在于：所述光源组件包括一载体、阵列设置在载体之上多个LED芯片及覆盖在所述LED芯片及载体之上的荧光层，多个所述LED芯片发出的光经同一荧光层进行匀光后形成一连续的发光面，所述发光面的面积与所述荧光层远离所述LED芯片的一面的面积相等；所述发光面与所述载体承载LED芯片的一面的面积之比为1∶(0.9-1.1)。
  2. 如权利要求1中所述光源组件，其特征在于：所述荧光层的发光面的面积与所述载体承载LED芯片的一面的面积之比为1∶1。
  3. 如权利要求1中所述光源组件，其特征在于：所述荧光层对应的每平方毫米之下设置1-13颗LED芯片。
  4. 如权利要求1中所述光源组件，其特征在于：相邻设置的两个LED芯片之间的间距为0.01mm-1mm，所述LED芯片的长度0.01mm-1mm，所述LED芯片的宽度为0.01mm-0.5mm。所述光源组件的厚度为0.01mm-0.6mm。
  5. 如权利要求1中所述光源组件，其特征在于：所述载体设有LED芯片的一面上设有多个焊盘图案及多组导线，所述LED芯片的正极和负极分别对应焊接在相邻设置的两个焊盘图案之上，所述导线连接部分或全部焊盘图案；单颗所述LED芯片的正投影面积大于等于LED芯片对应的两个焊盘图案所占区域面积。
  6. 如权利要求5中所述光源组件，其特征在于：所述载体与设置LED芯片相对的一面设有多个用于与外接电路连接的引脚，所述引脚与所述LED芯片之间电性连接。
  7. 如权利要求1中所述光源组件，其特征在于：所述载体包括叠加设置的两层膜层，在两层膜层之间设有一导电层，所述导电层包括多个焊盘图案，焊盘图案之间通过导线电性连接，其中一层膜层上开设有使对应焊盘图案外露的多个窗口，所述LED芯片的正极和负极对应焊锡在不同的焊盘图案之上；所述光源组件还包括一荧光层，同一荧光层填充所述LED芯片之间的间隙且覆盖所有LED芯片。
  8. 如权利要求1中所述光源组件，其特征在于：所述膜层为柔性材料。
  9. 如权利要求5或7中所述光源组件，其特征在于：所有焊盘图案及导线均设置于所述荧光层的正投影区域之内。
  10. 如权利要求1中所述光源组件，其特征在于：所述载体设有LED芯片的一面之上及所述荧光层之间设有一反射层，所述反射层设有多个窗口，LED芯片设置在窗口之内。
  11. 如权利要求1中所述光源组件，其特征在于：所述光源组件进一步包括白边，所述白边形成于载体之上且围绕所述荧光层设置；所述白边的外围与所述载体的外围一致；所述白边的厚度为0.001mm-0.1mm。
  12. 如权利要求1中所述光源组件，其特征在于：在所述荧光层之上直接贴附一微透镜层，所述微透镜层上设有与LED芯片对应设置的多个微透镜。
  13. 一种显示装置，其特征在于：其包括显示组件及如权利要求1-12中任一项所述的光源组件，所述光源组件直接贴附于所述显示组件之上。
  14. 如权利要求13中所述显示装置，其特征在于：所述载体的边缘处与所述显示组件的边缘处齐平。
  15. 如权利要求1-12中任一项所述光源组件的制备方法，其特征在于：其包括以下步骤：提供一载体及在载体上的其中一面上形成多个焊盘图案及连接焊盘图案的多组导线，另一面上形成与外接电路连接的引脚；焊盘图案的对应位置上形成焊锡点；将LED芯片放置到对应的焊锡点之上，以使LED芯片的正极和负极对应焊接固定在相邻设置的两个不同的焊盘图案之上；在多个LED芯片之上覆盖形成同一预制荧光层后，获得所需光源组件。
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