WO2018099058A1 - Oled显示装置 - Google Patents

Oled显示装置 Download PDF

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Publication number
WO2018099058A1
WO2018099058A1 PCT/CN2017/090381 CN2017090381W WO2018099058A1 WO 2018099058 A1 WO2018099058 A1 WO 2018099058A1 CN 2017090381 W CN2017090381 W CN 2017090381W WO 2018099058 A1 WO2018099058 A1 WO 2018099058A1
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WIPO (PCT)
Prior art keywords
layer
display device
auxiliary electrode
cathode
pixel separation
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English (en)
French (fr)
Inventor
卢永春
程鸿飞
吴新银
马永达
先建波
张玉欣
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BOE Technology Group Co Ltd
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BOE Technology Group Co Ltd
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Priority to EP17837935.0A priority Critical patent/EP3550626A4/en
Priority to US15/748,295 priority patent/US10355052B2/en
Publication of WO2018099058A1 publication Critical patent/WO2018099058A1/zh
Anticipated expiration legal-status Critical
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/122—Pixel-defining structures or layers, e.g. banks
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • H10K10/40—Organic transistors
    • H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/805—Electrodes
    • H10K50/81—Anodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/805—Electrodes
    • H10K50/82—Cathodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/805—Electrodes
    • H10K50/82—Cathodes
    • H10K50/824—Cathodes combined with auxiliary electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/131—Interconnections, e.g. wiring lines or terminals
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/80—Constructional details
    • H10K59/805—Electrodes
    • H10K59/8052—Cathodes
    • H10K59/80522—Cathodes combined with auxiliary electrodes
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F21—LIGHTING
    • F21Y—INDEXING SCHEME ASSOCIATED WITH SUBCLASSES F21K, F21L, F21S and F21V, RELATING TO THE FORM OR THE KIND OF THE LIGHT SOURCES OR OF THE COLOUR OF THE LIGHT EMITTED
    • F21Y2115/00—Light-generating elements of semiconductor light sources
    • F21Y2115/10—Light-emitting diodes [LED]
    • F21Y2115/15—Organic light-emitting diodes [OLED]

Definitions

  • the present disclosure relates to the field of display technologies, and in particular, to an OLED display device.
  • OLED Organic Light-Emitting Display
  • the self-luminous component that is, the OLED device, is mainly composed of an anode, a light-emitting function layer, and a cathode which are disposed away from the substrate in this order.
  • OLED devices can be classified into two types: a bottom emission type (i.e., a downward illumination with respect to a substrate) and a top emission type (i.e., an upward illumination with respect to a substrate). Due to the higher aperture ratio, the OLED display device is mostly used in the OLED display device.
  • the cathode is usually composed of a metal element and/or an alloy material having a low work function, the light transmittance thereof is low, and the thickness of the cathode is reduced in order to reduce the influence of the cathode on the overall light-emitting rate of the OLED device (especially the top-emitting OLED device). Usually small.
  • the cathode 1 of the OLED device including the cathode 1, the anode 2, and the light-emitting function layer 3 disposed between the cathode 1 and the anode 2 needs to be connected to the printed circuit board 4, it is required to be displayed.
  • a via 6 connecting the cathode 1 and the conductive connection line 5 is provided on the non-display area NDA around the area DA, so that the cathode 1 is connected to the printed circuit board 4 through the conductive connection line 5. Therefore, the via structure on the non-display area has a large occupation area of the display screen, and the influence on the display area of the entire OLED display device is obvious.
  • embodiments of the present disclosure provide an OLED display device that improves the problem of cathode voltage drop; and at the same time, can reduce the peripheral size of the display device, and is particularly suitable for a micro OLED display device.
  • An embodiment of the present disclosure provides an OLED display device including a pixel separation layer and a OLED device having a plurality of opening portions disposed on a substrate; the OLED device includes a substrate away from the substrate a cathode, a light-emitting function layer, and a cathode; the light-emitting function layer is disposed in the opening portion; the pixel separation layer is provided with a via hole, and the display device further includes: a correspondence disposed under the pixel separation layer An auxiliary electrode isolated from the anode in the display region, the auxiliary electrode being connected to the cathode through a via of the pixel separation layer; and printing on a side of the substrate away from the pixel separation layer a circuit board; wherein the printed circuit board transmits a cathode signal to the auxiliary electrode through a conductive lead.
  • the auxiliary electrode is an auxiliary electrode disposed over the entire surface of the pixel separation layer; the display device further includes a spacer disposed in the opening portion for isolating the auxiliary electrode from the A dielectric barrier layer for the anode.
  • the electrically conductive leads are disposed in a non-display area of the display device.
  • one of the auxiliary electrodes is provided every 4 to 10 OLED devices.
  • the display device further includes a flat layer disposed in the same layer as the auxiliary electrode, and the thickness of the flat layer is the same as the thickness of the auxiliary electrode.
  • the pattern of the auxiliary electrodes comprises a strip shape, a zigzag shape, and a grid shape.
  • the cathode is a full-surface cathode covering the pixel separation layer; wherein the full-surface cathode is connected to the auxiliary electrode through the pixel separation layer via.
  • the auxiliary electrode is constructed of a topological insulator.
  • the topological insulator comprises at least one of a single layer of tin atomic layers and a single layer of tin atomic variant material.
  • the printed circuit board is secured to the substrate by soldering or bonding.
  • the substrate includes: a substrate substrate; an array structure layer disposed on the substrate substrate; a protective layer covering the array structure layer under the pixel separation layer; wherein
  • the base substrate is composed of at least one of silicon, glass, an organic composite, and a polymer material.
  • the auxiliary electrode is disposed in the same layer as the anode; or the auxiliary electrode includes a first conductive layer and a second conductive layer for forming a material of the first conductive layer and for forming a The materials of the anodes are the same.
  • the portion of the auxiliary electrode that overlaps the cathode has a width of 150-250 [mu]m.
  • the display device further includes a connection hole between the anode and the thin film transistor driving the anode, at least a portion of the via having a width or an area larger than a width of the connection hole or area.
  • the OLED display device is a top emission type OLED display device.
  • the cathode of the OLED device is connected to the lower auxiliary electrode through the via hole on the pixel separation layer, and the parallel structure is formed on the one hand because the cathode is connected to the auxiliary electrode.
  • the surface resistance of the cathode having a smaller thickness is reduced, the problem of the cathode voltage drop of the OLED device is improved, and the illuminating unevenness of the OLED display device is avoided.
  • the auxiliary electrode is disposed in the display region, the auxiliary electrode is connected.
  • the via hole with the cathode is also disposed on the pixel separation layer corresponding to the display In the portion of the region, the auxiliary electrode is connected to the printed circuit board disposed on the other side of the substrate by the conductive lead disposed in the non-display region, and the via hole does not occupy the area of the non-display area, thereby avoiding direct
  • the conductive connecting wire is drawn from the cathode to the printed circuit board, the area occupied by the via structure in the non-display area reduces the peripheral size of the display device, and is particularly suitable for a miniature OLED display device having a diagonal length of the display screen of less than 5 cm.
  • FIG. 1 is a schematic structural view 1 of an OLED display device provided by the prior art
  • FIG. 2 is a schematic structural view 2 of an OLED display device provided by the prior art
  • FIG. 3 is a schematic structural diagram 1 of an OLED display device according to an embodiment of the present disclosure.
  • FIG. 4 is a schematic structural diagram 2 of an OLED display device according to an embodiment of the present disclosure.
  • Figure 5 is a pattern of the auxiliary electrode of Figure 4.
  • 01-OLED display device 10-substrate; 20-pixel spacer layer; 21-via; 30-OLED device; 31-anode; 32-light-emitting functional layer; 33-cathode; 40-auxiliary electrode; 50-conductive lead; 60-printed circuit board; 70-dielectric isolating layer; 80-flat layer.
  • an embodiment of the present disclosure provides an OLED display device 01, which includes a pixel separation layer 20 and a OLED device 30 having a plurality of opening portions disposed on a substrate 10; an OLED device 30 includes an anode 31 sequentially away from the substrate 10, a light-emitting function layer 32 (corresponding to different pixel regions in the figure labeled as R, G, B, respectively) and a cathode 33; a light-emitting function layer 32 is disposed in the opening portion; and a pixel separation layer 20 is provided
  • the display device 01 further includes an auxiliary electrode 40 disposed under the pixel separation layer 20 and separated from the anode 31 corresponding to the display region, and the auxiliary electrode 40 passes through the via 21 and the cathode 33 of the pixel separation layer 20.
  • a conductive lead 50 disposed in the non-display area; a printed circuit board 60 disposed on a side of the substrate 10 remote from the pixel separation layer 20; wherein the printed circuit board 60 transmits the cathode signal to the auxiliary electrode 40 through the conductive lead 50.
  • a plurality of opening portions on the pixel separation layer 20 define a plurality of pixel regions, which are marked as X in the above figure.
  • the light-emitting function layer 32 of the OLED device 30 may further include a structure such as a hole injection layer, an electron blocking layer, a light-emitting layer, a hole blocking layer, and an electron injection layer.
  • a structure such as a hole injection layer, an electron blocking layer, a light-emitting layer, a hole blocking layer, and an electron injection layer.
  • Each layer may be composed of an organic small molecule material, an organic polymer material, an inorganic material, a composite doping material or the like.
  • the light-emitting function layer 32 may include a monochromatic light-emitting layer, for example, a blue light-emitting layer; or the light-emitting function layer 32 includes a monochromatic light-emitting layer and a color conversion layer, for example, the monochromatic light-emitting layer is a blue light-emitting layer, and the color conversion layer The red, green, and blue color conversion layers are included; or, the light-emitting function layer 32 includes a multi-color light-emitting layer, for example, including red, green, blue, and white light-emitting layers.
  • the cathodes of the OLED devices 30 are typically connected to the same supply voltage U1 (e.g., 0V), in order to simplify the structure of the OLED display device, the cathodes are typically full-surface cathodes that are connected together.
  • U1 e.g., 0V
  • the embodiments of the present disclosure are not limited thereto, and the cathodes of the OLED devices 30 may be independently disposed and connected to the lower auxiliary electrodes 40 through the plurality of via holes 21 on the pixel separation layer 20, respectively.
  • the printed circuit board 60 can be fixed to the substrate by soldering or bonding, for example, which is not limited in the embodiment of the present disclosure.
  • the display device may be a product or a component having any display function, such as an OLED panel, an OLED display, a micro OLED display, an OLED television, a digital photo frame, a mobile phone, a tablet computer, or the like.
  • any display function such as an OLED panel, an OLED display, a micro OLED display, an OLED television, a digital photo frame, a mobile phone, a tablet computer, or the like.
  • the cathode 33 of the OLED device 30 is connected to the lower auxiliary electrode 40 through the via 21 on the pixel separation layer 20, on the one hand, due to the cathode 33 is connected with the auxiliary electrode 40 to form a parallel structure, so that the surface resistance of the cathode having a smaller thickness is reduced, the cathode voltage drop of the OLED device is improved, and the uneven illuminating phenomenon of the OLED display device is avoided; Since the auxiliary electrode 40 is disposed in the display region, the via hole 21 connecting the auxiliary electrode 40 and the cathode 33 is also disposed in a portion of the pixel separation layer 20 corresponding to the display region, and the conductive lead 50 disposed in the non-display region will be The auxiliary electrode 40 is connected to the printed circuit board 60 disposed on the other side of the substrate 10.
  • the via hole does not occupy the area of the non-display area, and avoids the prior art when the conductive connection line is directly drawn from the cathode to the printed circuit board.
  • the area occupied by the non-display area when the via structure is provided reduces the size of the periphery of the display device.
  • the inventors have found that this technique is particularly suitable for use in miniature OLED displays.
  • the via structure on the non-display area occupies a large area on the peripheral area of the display screen, and the influence on the display area of the entire micro OLED display is obvious. Therefore, the via structure on the non-display area is advantageous for saving the layout space of the miniature OLED display.
  • the substrate 10 specifically includes a base substrate composed of at least one of silicon, glass, an organic composite, and a polymer material, an array structure layer disposed on the base substrate, and a protective layer covering the array structure layer.
  • the array structure layer is a plurality of TFT (Thin Film Transistor) structures arranged in an array, and the anode 31 of the OLED device 30 is connected to the corresponding TFT through a connection hole on the protective layer, that is, each pixel region is
  • TFT addressing is independently controlled, and each pixel can be independently adjusted selectively, which is beneficial to the realization of OLED colorization.
  • the specific structure of the array structure layer can be used in the prior art, and the embodiment of the present disclosure does not limit this.
  • the TFT can be of the N-type, P-type, or CMOS type.
  • the active layer of the TFT may be of a type such as amorphous silicon, Oxide, LTPS, OTPS (Oxide combined with LTPS).
  • the substrate 10 may be a substrate including a driving chip, and the driving chip includes a driving component electrically connected to the corresponding OLED device.
  • the above display is used for a micro OLED display (Micro-OLED)
  • the substrate 10 includes an active silicon layer, and the active silicon layer includes an electronic pixel addressing circuit fabricated as an integrated circuit.
  • the active silicon layer is typically formed on a circular substrate wafer made of silicon, glass, quartz, or sapphire.
  • auxiliary electrode 40 may be composed of at least one of conventional low-resistivity copper, silver, gold, platinum, aluminum, nickel, and molybdenum.
  • the auxiliary electrode 40 may also be constructed of a topological insulator.
  • Topological insulators are a very special type of insulator. The band structure in such materials is a typical type of insulator. There is an energy gap at the Fermi energy. However, there is always a gap across the surface of the material. Dirac-type conductive edge states, such conductive edge states are stable under the premise of guaranteeing certain symmetry (such as time-reversed symmetry), and the direction of motion of different spin-conducting electrons is opposite, so The transfer of information can be transmitted by electrons rather than by traditional materials.
  • the topological insulator may be at least one of a single layer of tin atomic layer and a single layer of tin atomic variant material, and the conductivity of the entire surface at room temperature (in terms of a computer chip) may reach 100%, and due to It behaves as internal insulation but the surface is conductive, and electrons can only move along the surface of the material, unlike traditional conductive materials that pass charge conduction.
  • the dissipating process is not involved, that is, it does not generate heat, and application to the above display device can also reduce the heat generation of the OLED device during operation and reduce the energy consumption of the OLED device.
  • the auxiliary electrode 40 may be an auxiliary electrode of the entire surface disposed under the pixel separation layer 20 to simplify the preparation process.
  • the above display device 01 further includes a dielectric isolation layer 70 disposed in the opening portion of the pixel separation layer 20 for isolating the entire surface of the auxiliary electrode from the anode 31.
  • the auxiliary electrode 40 may be disposed in the same layer as the anode 31 in the case of ensuring isolation of the anode 31 from the auxiliary electrode 40, which may simplify the process; or the auxiliary electrode 40 may include a patterned first conductive layer in the same layer as the anode.
  • the layer and the second conductive layer are located between the cathode and the second conductive layer, so that the via holes for connecting the cathode separation layer 20 of the cathode 31 and the auxiliary electrode 40 are prevented from being too deep, and the yield is ensured.
  • the first conductive layer is made of the same material as the anode, and the second conductive layer may be formed of at least one of copper, silver, gold, platinum, aluminum, nickel, and molybdenum.
  • the cathode 33 is at a distance of about 500-600 [mu]m from the edge of the substrate 10.
  • the distance between the auxiliary electrode 40 and the edge of the substrate 10 is about 0-350 [mu]m.
  • the portion of the auxiliary electrode 40 overlapping the cathode 33 has a width of about 150-250 [mu]m; in one embodiment, the area of the portion of the auxiliary electrode 40 overlapping the cathode 33 is 10 of the area of the auxiliary electrode 40. %-90%.
  • At least the auxiliary electrode 40 overlaps the orthographic projection of the anode 31 of some or all of the pixel regions on the substrate 10.
  • the distance between the vias 21 of the pixel separation layer 20 for connecting the cathode 33 and the auxiliary electrode 40 to the OLED device needs to satisfy certain conditions, such as : at least a portion of the via 21 is spaced from the anode 31 of the pixel region by a distance of about 15-200 ⁇ m.
  • the vias 21 are located between adjacent different color pixel regions.
  • a portion of the via 21 is located between adjacent R pixel regions and G pixel regions.
  • a connection hole between the anode 31 and the TFT driving the anode 31 is further included, and at least a portion of the via hole 21 and the connection hole are located on the same extension line, which is advantageous for the design of the mask process.
  • the width of the partial via 21 is 1.2-5 times the width of the connection hole between the anode 31 and the TFT driving the anode 31, and the area of the partial via 21 is the connection hole between the anode 31 and the TFT driving the anode 31.
  • the area is 1.2-5 times.
  • the OLED display device provided by the present disclosure is specifically a top emission type OLED display device.
  • the OLED display device provided by the present disclosure is specifically a micro OLED display device. Set.
  • the preparation process is as follows:
  • Step 1.1 depositing electrode material on the entire substrate 10 as an auxiliary electrode 40;
  • Step 1.2 forming a pixel separation layer 20 having a certain pattern by a patterning process; forming an opening portion defining a plurality of pixel regions X on the pixel separation layer 20;
  • Step 1.3 through the patterning process, patterning the dielectric isolation layer 70, the anode 31 and the light-emitting function layer 32 one by one in the pixel region X;
  • the via holes 21 on the pixel separation layer 20 can be formed by a mask process with an adjustable exposure amount, so that the preparation process of the via holes is performed in the same patterning process as the anode 31 without additionally adding a process flow.
  • Step 1.4 depositing the cathode 33, and causing the cathode 33 to be connected to the lower auxiliary electrode 40 through the via 21 on the pixel separation layer 20.
  • one auxiliary electrode 40 is disposed every 4 to 10 OLED devices 30, that is, the display device 01 includes a plurality of auxiliary electrodes 40 arranged at intervals.
  • the embodiment of the present disclosure does not limit the pattern of the auxiliary electrode 40, and may be, for example, a strip shape as shown in part (a) of FIG. 5, or a zigzag shape as shown in part (b) of FIG. 5, or as shown in FIG. The grid shape shown in part (c).
  • the above display device 01 further includes a flat layer 80 disposed in the same layer as the auxiliary electrode 40, and the thickness of the flat layer 80 is the same as the thickness of the auxiliary electrode 40, thereby ensuring that the pixel separation layer 20 as a whole has a good flatness. Sex.
  • the above-mentioned same layer arrangement refers to a structure in which at least two patterns are disposed on the same layer of film.
  • the preparation process is as follows:
  • Step 2.1 depositing an insulating layer on the substrate 10, patterning the insulating layer by a patterning process to form a flat layer 80 and defining an area of the auxiliary electrode;
  • Step 2.2 forming an auxiliary electrode 40 in the defined area
  • Step 2.3 forming a pixel separation layer 20 having a certain pattern by a patterning process; forming an opening portion defining a plurality of pixel regions X on the pixel separation layer 20;
  • Step 2.4 through the patterning process, patterning the anode 31 and the light-emitting function layer 32 one by one in the pixel region X;
  • the via holes 21 on the pixel separation layer 20 can be formed by a mask process with an adjustable exposure amount, so that the preparation process of the via holes is performed in the same patterning process as the anode 31 without additionally adding a process flow.
  • Step 2.5 depositing the cathode 33, and causing the cathode 33 to be connected to the lower auxiliary electrode 40 through the via 21 on the pixel separation layer 20.

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  • Optics & Photonics (AREA)
  • Engineering & Computer Science (AREA)
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  • Electroluminescent Light Sources (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)

Abstract

一种OLED显示装置（01）。该显示装置包括设置在基板（10）上的具有多个开口部分的像素分隔层（20）和OLED器件（30）；OLED器件包括依次远离基板设置的阳极（31）、发光功能层（32）和阴极（33）；发光功能层设置在开口部分内；像素分隔层设置有过孔（21），设置在像素分隔层对应于显示区域下方的与阳极隔离开的辅助电极（40），辅助电极通过像素分隔层过孔与阴极相连；设置在基板的远离像素分隔层一侧的印刷电路板（60）；其中，印刷电路板通过导电引线（50）将阴极信号传输至辅助电极。

Description

OLED显示装置 技术领域
本公开涉及显示技术领域，尤其涉及一种OLED显示装置。
背景技术
有机电致发光显示装置(Organic Light-Emitting Display，简称为OLED)相对于液晶显示装置具有自发光、反应快、视角广、亮度高、色彩艳、轻薄等优点，被认为是下一代显示技术。其中的自发光元件即OLED器件主要由依次远离基板设置的阳极、发光功能层以及阴极构成。根据发光方向的不同，OLED器件可分为底发光型(即相对于基板向下发光)和顶发光型(即相对于基板向上发光)两种类型。由于顶发光的方式可获得更高的开口率，因此目前OLED显示装置多采用顶发光型的OLED器件。
由于阴极通常采用低功函数的金属单质和/或合金材料构成，其光透过率较低，为了减小阴极对OLED器件(尤其是顶发光型OLED器件)整体出光率的影响，阴极的厚度通常很小。由电极的方块电阻表达式，Rs＝ρ/t(其中，ρ为电极的电阻率，t为电极的厚度)可以得出，阴极的厚度越小其方块电阻越大，造成OLED器件电压降(IR Drop，即电阻两端的电位差)严重，使得离电源供给地点，即与阳极层相连的驱动晶体管越远的OLED发光面电压降越明显，从而导致OLED器件出现明显的发光不均现象。
如图1和图2所示，由于OLED器件(其包括阴极1、阳极2和设置在阴极1与阳极2之间的发光功能层3)的阴极1需要连接至印刷电路板4，需要在显示区域DA周边的非显示区域NDA上设置连接阴极1与导电连接线5的过孔6，使得阴极1通过导电连接线5与印刷电路板4连接。因此，非显示区域上的过孔结构对显示屏周边面积的占用较大，对整个OLED显示装置的显示屏面积影响较为明显。
发明内容
鉴于此，为解决现有技术的问题，本公开的实施例提供一种OLED显示装置，改善阴极压降的问题；同时还可减少显示装置周边尺寸，尤其适用于微型OLED显示装置。
为达到上述目的，本公开的实施例采用如下技术方案：
本公开实施例提供了一种OLED显示装置，所述显示装置包括设置在基板上的具有多个开口部分的像素分隔层和OLED器件；所述OLED器件包括依次远离基板 设置的阳极、发光功能层和阴极；所述发光功能层设置在所述开口部分内；所述像素分隔层设置有过孔，所述显示装置还包括：设置在所述像素分隔层下方的对应于显示区域的与所述阳极隔离开的辅助电极，所述辅助电极通过所述像素分隔层的过孔与所述阴极相连；设置在所述基板的远离所述像素分隔层的一侧的印刷电路板；其中，所述印刷电路板通过导电引线将阴极信号传输至所述辅助电极。
在一个实施例中，所述辅助电极为设置在所述像素分隔层下方的整面的辅助电极；所述显示装置还包括设置在所述开口部分内的用于隔离所述辅助电极与所述阳极的介电隔离层。
在一个实施例中，所述导电引线设置在所述显示装置的非显示区域中。
在一个实施例中，每隔4～10个OLED器件设置一个所述辅助电极。
在一个实施例中，所述显示装置还包括与所述辅助电极同层设置的平坦层，且所述平坦层的厚度与所述辅助电极的厚度相同。
在一个实施例中，所述辅助电极的图案包括条形、锯齿形和网格形。
在一个实施例中，所述阴极为覆盖所述像素分隔层的整面阴极；其中，所述整面阴极通过所述像素分隔层过孔与所述辅助电极相连。
在一个实施例中，所述辅助电极由拓扑绝缘体构成。
在一个实施例中，所述拓扑绝缘体包括单层锡原子层及单层锡原子变体材料中的至少一种。
在一个实施例中，所述印刷电路板通过焊接或粘合的方式固定到所述基板上。
在一个实施例中，所述基板包括：衬底基板；设置在所述衬底基板上的阵列结构层；位于所述像素分隔层下方的覆盖所述阵列结构层的保护层；其中，所述衬底基板由硅、玻璃、有机复合物和高分子材料中的至少一种材料构成。
在一个实施例中，所述辅助电极与所述阳极同层设置；或者所述辅助电极包括第一导电层和第二导电层，用于形成所述第一导电层的材料与用于形成所述阳极的材料相同。
在一个实施例中，所述辅助电极与所述阴极交叠的部分的宽度为150-250μm。
在一个实施例中，所述显示装置还包括用于连接所述阳极与驱动所述阳极的薄膜晶体管之间的连接孔，至少部分所述过孔的宽度或面积大于所述连接孔的宽度或面积。
在一个实施例中，所述OLED显示装置是顶发光型OLED显示装置。
基于此，通过本公开实施例提供的上述OLED显示装置，将OLED器件的阴极通过像素分隔层上的过孔连接至下方的辅助电极，一方面由于阴极与辅助电极相连后形成了并联结构，使得厚度较小的阴极的面电阻减小，改善了OLED器件的阴极压降的问题，避免OLED显示装置出现明显的发光不均现象；另一方面，由于辅助电极设置在显示区域中，连接辅助电极与阴极的过孔也设置在像素分隔层的对应于显示 区域的部分中，通过设置在非显示区域中的导电引线将辅助电极连接至设置在基板的另一侧的印刷电路板上，过孔不占用非显示区域的面积，避免了现有技术中直接从阴极引出导电连接线至印刷电路板时，在非显示区域设置过孔结构时所占用的面积，减少了显示器件周边尺寸，尤其适用于显示屏对角线长度小于5cm的微型OLED显示装置。
附图说明
为了更清楚地说明本公开实施例或现有技术中的技术方案，下面将对实施例或现有技术描述中所需要使用的附图作简单地介绍，显而易见地，下面描述中的附图仅仅是本公开的一些实施例，对于本领域普通技术人员来讲，在不付出创造性劳动的前提下，还可以根据这些附图获得其他的附图。
图1为现有技术提供的一种OLED显示装置的结构示意图一；
图2为现有技术提供的一种OLED显示装置的结构示意图二；
图3为本发明实施例提供的一种OLED显示装置的结构示意图一；
图4为本发明实施例提供的一种OLED显示装置的结构示意图二；
图5为图4中辅助电极的图案。
附图说明：
01-OLED显示装置；10-基板；20-像素分隔层；21-过孔；30-OLED器件；31-阳极；32-发光功能层；33-阴极；40-辅助电极；50-导电引线；60-印刷电路板；70-介电隔离层；80-平坦层。
具体实施方式
下面将结合本公开实施例中的附图，对本公开实施例中的技术方案进行清楚、完整地描述，显然，所描述的实施例仅仅是本公开一部分实施例，而不是全部的实施例。基于本公开中的实施例，本领域普通技术人员在没有做出创造性劳动前提下所获得的所有其他实施例，都属于本公开保护的范围。
需要指出的是，除非另有定义，本公开实施例中所使用的所有术语(包括技术和科学术语)具有与本公开所属领域的普通技术人员共同理解的相同含义。还应当理解，诸如在通常字典里定义的那些术语应当被解释为具有与它们在相关技术的上下文中的含义相一致的含义，而不应用理想化或极度形式化的意义来解释，除非这里明确地这样定义。
例如，本公开专利申请说明书以及权利要求书中所使用的“包括”或者“包含”等类似的词语意指出现该词前面的元件或者物件涵盖出现在该词后面列举的元件或者物件及其等同，而不排除其他元件或者物件。“上方”、“下方”等指示的方位或位置关系的术语为基于附图所示的方位或位置关系，仅是为了便于说明本公开的技术 方案的简化描述，而不是指示或暗示所指的装置或元件必须具有特定的方位、以特定的方位构造和操作，因此不能理解为对本公开的限制。
并且，由于本公开实施例所涉及的OLED器件的实际尺寸非常微小，为了清楚起见，本公开实施例附图中的各结构尺寸均被放大，不代表实际尺寸比例。
如图3和图4所示，本公开实施例提供了一种OLED显示装置01，该显示装置01包括设置在基板10上的具有多个开口部分的像素分隔层20和OLED器件30；OLED器件30包括依次远离基板10的阳极31、发光功能层32(图中对应于不同像素区域分别标记为R、G、B)和阴极33；发光功能层32设置在开口部分内；像素分隔层20设置有过孔21，上述显示装置01还包括：设置在像素分隔层20下方的对应于显示区域的与阳极31隔离开的辅助电极40，辅助电极40通过像素分隔层20的过孔21与阴极33相连；设置在非显示区域的导电引线50；设置在基板10的远离像素分隔层20的一侧的印刷电路板60；其中，印刷电路板60通过导电引线50将阴极信号传输至辅助电极40。需要说明的是，像素分隔层20上的多个开口部分即界定出多个像素区域，上图中标记为X。
举例而言，沿由阳极31指向阴极33的方向，OLED器件30的发光功能层32进一步可以依次包括空穴注入层、电子阻挡层、发光层、空穴阻挡层以及电子注入层等结构。各层可采用有机小分子材料、有机聚合物材料，也可采用无机材料，以及复合掺杂材料等构成。当然，发光功能层32可以包括单色发光层，例如：蓝色发光层；或者发光功能层32包括单色发光层和色彩转换层，例如：单色发光层为蓝色发光层，色彩转换层包括红色、绿色、蓝色色彩转换层；或者，发光功能层32包括多色彩发光层，例如：包括红色、绿色、蓝色、白色发光层。
例如，由于各OLED器件30的阴极通常是连接至同一电源电压U1(比如0V)，为了简化OLED显示装置的结构，各阴极通常是连接在一起的整面阴极。
本公开实施例的附图3和图4仅以各阴极连接在一起形成整面阴极为例进行说明，整面阴极可覆盖像素分隔层20，并通过像素分隔层20上的至少一个过孔21与辅助电极40相连，但是本公开并不限于此。
当然，本公开实施例不限于此，各OLED器件30的阴极可独立设置，并通过像素分隔层20上的多个过孔21分别与下方的辅助电极40相连。
例如，印刷电路板60例如可以通过焊接或粘合的方式固定到基板上，本公开实施例对此不作限定。
例如上述显示装置具体可以是OLED面板、OLED显示器、微型OLED显示器(Micro-OLED)、OLED电视、数码相框、手机、平板电脑等具有任何显示功能的产品或者部件。
基于此，通过本公开实施例提供的上述OLED显示装置01，将OLED器件30的阴极33通过像素分隔层20上的过孔21连接至下方的辅助电极40，一方面由于阴极 33与辅助电极40相连后形成了并联结构，使得厚度较小的阴极的面电阻减小，改善了OLED器件的阴极压降的问题，避免OLED显示装置出现明显的发光不均现象；另一方面，由于辅助电极40设置在显示区域中，连接辅助电极40与阴极33的过孔21也设置在像素分隔层20的对应于显示区域的部分中，通过设置在非显示区域中的导电引线50将辅助电极40连接至设置在基板10的另一侧的印刷电路板60上，过孔不占用非显示区域的面积，避免了现有技术中直接从阴极引出导电连接线至印刷电路板时，在非显示区域设置过孔结构时所占用的面积，减少了显示器件周边尺寸。
发明人发现，采用这种技术尤其适用于微型OLED显示器。对于微型OLED显示器而言，由于其显示屏对角线长度通常小于5cm，非显示区域上的过孔结构对显示屏周边面积的占用较大，对整个微型OLED显示器的显示屏面积影响较为明显，因此非显示区域上的过孔结构有利于节省微型OLED显示器布局空间。
进一步的，上述基板10具体包括由硅、玻璃、有机复合物和高分子材料中的至少一种材料构成的衬底基板、设置在衬底基板上的阵列结构层以及覆盖阵列结构层的保护层。例如，其中阵列结构层即为阵列排布的多个TFT(Thin Film Transistor，薄膜晶体管)结构，OLED器件30的阳极31通过保护层上的连接孔连接至相应的TFT，即每个像素区域由TFT寻址独立控制，可对各像素独立进行选择性调节，有利于OLED彩色化的实现。阵列结构层的具体结构可沿用现有技术，本公开实施例对此不作限定。TFT可以为N型、P型，或CMOS类型。当然，TFT的有源层可以为非晶硅、Oxide、LTPS、OTPS(Oxide与LTPS结合)等类型。
在一个实施例中，上述基板10可以是包括驱动芯片的衬底基板，该驱动芯片包括有与相应OLED器件电性连接的驱动元件。例如：上述显示器用于微型OLED显示器(Micro-OLED)，基板10包括有源硅层，有源硅层中包含作为集成电路制作的电子像素寻址电路。通常，有源硅层一般形成在由硅、玻璃、石英、或蓝宝石制成的圆形衬底晶片上。
进一步的，上述辅助电极40可以由常规的低电阻率的铜、银、金、铂、铝、镍和钼中的至少一种材料构成。
或者，辅助电极40也可以由拓扑绝缘体构成。拓扑绝缘体是一类非常特殊的绝缘体，这类材料内的能带结构是典型的绝缘体类型，在费米能处存在着能隙，然而在该类材料的表面则总是存在着穿越能隙的狄拉克型的导电的边缘态，这样的导电边缘态在保证一定对称性(比如时间反演对称性)的前提下是稳定存在的，而且不同自旋的导电电子的运动方向是相反的，所以信息的传递可以通过电子的自旋，而不像传统材料通过电荷来传递。
具体的，拓扑绝缘体可以为单层锡原子层及单层锡原子变体材料中的至少一种，其在常温下(就计算机芯片而言)全表面的导电率可达100％，并且由于其表现为内部绝缘但表面导电，电子只可沿材料表面移动，而不像传统导电材料通过电荷传导， 不涉及耗散过程，即不会发热，应用到上述显示装置后还可降低OLED器件工作时的发热，降低OLED器件的能耗。
在上述基础上进一步的，参考图3所示，辅助电极40可以为设置在像素分隔层20下方的整面的辅助电极，以简化制备工艺。
这里，由于阳极31的至少部分区域是设置在像素分隔层20的开口处，以便在阳极31上通过蒸镀等工艺形成发光功能层32，为了避免辅助电极40接触到阳极31而导致阴极33与阳极31发生短路，参考图3所示，上述显示装置01还包括设置在像素分隔层20的开口部分内的用于隔离整面的辅助电极与阳极31的介电隔离层70。
在一个实施例中，在保证阳极31与辅助电极40隔离情况下，辅助电极40可以与阳极31同层设置，这可以简化工艺；或者辅助电极40包括与阳极同层的图案化的第一导电层、以及第二导电层，第一导电层位于阴极与第二导电层之间，可以避免用于连接阴极31和辅助电极40的像素分隔层20的过孔太深，保证良率。第一导电层采用与阳极相同材料制作，第二导电层可以由铜、银、金、铂、铝、镍和钼中的至少一种材料形成。在一个实施例中，阴极33与基板10的边缘的距离约为500-600μm。
在一个实施例，辅助电极40与基板10的边缘的距离约为0-350μm。
在一个实施例中，辅助电极40与阴极33交叠的部分的宽度约为150-250μm；在一个实施例中，辅助电极40与阴极33交叠的部分的面积占辅助电极40的面积的10％-90％。
在一个实施例中，至少辅助电极40与部分或全部像素区域的阳极31在基板10上的正投影交叠。
在一个实施例中，为了节省布局空间和同时满足过孔的掩模工艺要求，像素分隔层20的用于连接阴极33和辅助电极40的过孔21与OLED器件的距离需要满足一定条件，例如：至少部分过孔21距离像素区域的阳极31的距离约为15-200μm。
在一个实施例中，至少部分过孔21位于相邻的不同颜色像素区域之间。例如：部分过孔21位于相邻的R像素区域与G像素区域之间。
在一个实施例中，还包括阳极31与驱动阳极31的TFT之间的连接孔，至少部分过孔21与连接孔位于同一延长线上，如此有利于掩膜工艺的设计。
在一个实施例中，还包括阳极31与驱动阳极31的TFT之间的连接孔，至少部分过孔21的宽度(或面积)大于与连接孔的宽度(或面积)，如此可以保证阴极与辅助电极连接强度。例如；部分过孔21的宽度是阳极31与驱动阳极31的TFT之间的连接孔的宽度1.2-5倍，部分过孔21的面积是阳极31与驱动阳极31的TFT之间的连接孔的面积1.2-5倍。
在一个实施例中，本公开所提供的OLED显示装置具体地为顶发光型OLED显示装置。
在一个实施例中，本公开所提供的OLED显示装置具体地为微型OLED显示装 置。
其制备工艺如下：
步骤1.1、将电极材料沉积在整个基板10上作为辅助电极40；
步骤1.2、通过构图工艺形成具有一定图案的像素分隔层20；像素分隔层20上形成有界定出多个像素区域X的开口部分；
步骤1.3、通过构图工艺，在像素区域X内逐一图案化制备介电隔离层70、阳极31以及发光功能层32；
这里，可以通过曝光量可调的掩模工艺形成像素分隔层20上的过孔21，使得过孔的制备过程与阳极31采用同一构图工艺完成，而无需额外增加工艺流程。
步骤1.4、沉积阴极33，并使得阴极33通过像素分隔层20上的过孔21与下方的辅助电极40相连。
或者，也可以参考图4所示，每隔4～10个OLED器件30设置一个辅助电极40，即上述显示装置01包括间隔设置的多个辅助电极40。本公开实施例对辅助电极40的图案不作限定，例如可以为如图5中(a)部分所示的条形、或如图5中(b)部分所示的锯齿形、或如图5中(c)部分所示的网格形。
这里，由于间隔设置的多个辅助电极40设置在像素分隔层20下方，为了使得像素分隔层20具有较好的平坦性以免在形成OLED器件的各层时由于像素分隔层20的不同区域存在段差而导致各层出现构图不良。参考图4所示，上述显示装置01还包括与辅助电极40同层设置的平坦层80，且平坦层80的厚度与辅助电极40的厚度相同，从而保证了像素分隔层20整体具有良好的平坦性。
其中，上述的同层设置是指将至少两种图案设置在同一层薄膜上的结构。
其制备工艺如下：
步骤2.1、在基板10上沉积一层绝缘层，通过构图工艺将该绝缘层图案化形成平坦层80并界定出辅助电极的区域；
步骤2.2、在界定出的区域内形成辅助电极40；
步骤2.3、通过构图工艺形成具有一定图案的像素分隔层20；像素分隔层20上形成有界定出多个像素区域X的开口部分；
步骤2.4、通过构图工艺，在像素区域X内逐一图案化制备阳极31和发光功能层32；
这里，可以通过曝光量可调的掩模工艺形成像素分隔层20上的过孔21，使得过孔的制备过程与阳极31采用同一构图工艺完成，而无需额外增加工艺流程。
步骤2.5、沉积阴极33，并使得阴极33通过像素分隔层20上的过孔21与下方的辅助电极40相连。
以上所述，仅为本公开的具体实施方式，但本公开的保护范围并不局限于此，任何熟悉本技术领域的技术人员在本公开揭露的技术范围内，可轻易想到变化或替换， 都应涵盖在本公开的保护范围之内。因此，本公开的保护范围应以所述权利要求的保护范围为准。

Claims (15)

  1. 一种OLED显示装置，所述显示装置包括设置在基板上的具有多个开口部分的像素分隔层和OLED器件；所述OLED器件包括依次远离基板设置的阳极、发光功能层和阴极；所述发光功能层设置在所述开口部分内；其中，所述像素分隔层设置有过孔，所述显示装置还包括：设置在所述像素分隔层下方的对应于显示区域的与所述阳极隔离开的辅助电极，所述辅助电极通过所述像素分隔层的过孔与所述阴极相连；设置在所述基板的远离所述像素分隔层的一侧的印刷电路板；其中，所述印刷电路板通过导电引线将阴极信号传输至所述辅助电极。
  2. 根据权利要求1所述的显示装置，其中，所述辅助电极为设置在所述像素分隔层下方的整面的辅助电极；所述显示装置还包括设置在所述开口部分内的用于隔离所述辅助电极与所述阳极的介电隔离层。
  3. 根据权利要求1所述的显示装置，其中，所述导电引线设置在所述显示装置的非显示区域中。
  4. 根据权利要求1所述的显示装置，其中，每隔4～10个所述OLED器件设置一个所述辅助电极。
  5. 根据权利要求1或4所述的显示装置，其中，所述显示装置还包括与所述辅助电极同层设置的平坦层，且所述平坦层的厚度与所述辅助电极的厚度相同。
  6. 根据权利要求1所述的显示装置，其中，所述辅助电极的图案包括条形、锯齿形和网格形。
  7. 根据权利要求1所述的显示装置，其中，所述阴极为覆盖所述像素分隔层的整面阴极；其中，所述整面阴极通过所述像素分隔层的过孔与所述辅助电极相连。
  8. 根据权利要求1所述的显示装置，其中，所述辅助电极由拓扑绝缘体构成。
  9. 根据权利要求7所述的显示装置，其中，所述拓扑绝缘体包括单层锡原子层及单层锡原子变体材料中的至少一种。
  10. 根据权利要求1所述的显示装置，其中，所述印刷电路板通过焊接或粘合的方式固定到所述基板上。
  11. 根据权利要求1所述的显示装置，其中，所述基板包括：衬底基板；设置在所述衬底基板上的阵列结构层；位于所述像素分隔层下方的覆盖所述阵列结构层的保护层；其中，所述衬底基板包括硅、玻璃、有机复合物和高分子材料中的至少一种材料。
  12. 根据权利要求1所述的显示装置，其中，所述辅助电极与所述阳极同层设置；或者所述辅助电极包括第一导电层和第二导电层，用于形成所述第一导电层的材料与用于形成所述阳极的材料相同。
  13. 根据权利要求1所述的显示装置，其中，所述辅助电极与所述阴极交叠的部分的宽度为150-250μm。
  14. 根据权利要求1或11所述的显示装置，所述显示装置还包括用于连接所述阳极与 驱动所述阳极的薄膜晶体管之间的连接孔，至少部分所述过孔的宽度或面积大于所述连接孔的宽度或面积。
  15. 根据权利要求1所述的显示装置，其中，所述OLED显示装置是顶发光型OLED显示装置。
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