WO2018107841A1 - 一种磷光PtAg2配合物及其制备方法和用途 - Google Patents
一种磷光PtAg2配合物及其制备方法和用途 Download PDFInfo
- Publication number
- WO2018107841A1 WO2018107841A1 PCT/CN2017/102504 CN2017102504W WO2018107841A1 WO 2018107841 A1 WO2018107841 A1 WO 2018107841A1 CN 2017102504 W CN2017102504 W CN 2017102504W WO 2018107841 A1 WO2018107841 A1 WO 2018107841A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- formula
- complex
- group
- phosphorescent
- alkyl
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Ceased
Links
Images
Classifications
-
- C—CHEMISTRY; METALLURGY
- C07—ORGANIC CHEMISTRY
- C07F—ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
- C07F15/00—Compounds containing elements of Groups 8, 9, 10 or 18 of the Periodic Table
- C07F15/0006—Compounds containing elements of Groups 8, 9, 10 or 18 of the Periodic Table compounds of the platinum group
- C07F15/0086—Platinum compounds
-
- C—CHEMISTRY; METALLURGY
- C07—ORGANIC CHEMISTRY
- C07F—ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
- C07F19/00—Metal compounds according to more than one of main groups C07F1/00 - C07F17/00
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K11/00—Luminescent materials, e.g. electroluminescent or chemiluminescent
- C09K11/02—Use of particular materials as binders, particle coatings or suspension media therefor
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K11/00—Luminescent materials, e.g. electroluminescent or chemiluminescent
- C09K11/06—Luminescent materials, e.g. electroluminescent or chemiluminescent containing organic luminescent materials
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
- H10K50/11—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
- H10K50/11—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers
- H10K50/12—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers comprising dopants
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
- H10K85/30—Coordination compounds
- H10K85/361—Polynuclear complexes, i.e. complexes comprising two or more metal centers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
- H10K85/30—Coordination compounds
- H10K85/371—Metal complexes comprising a group IB metal element, e.g. comprising copper, gold or silver
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K2211/00—Chemical nature of organic luminescent or tenebrescent compounds
- C09K2211/10—Non-macromolecular compounds
- C09K2211/1003—Carbocyclic compounds
- C09K2211/1007—Non-condensed systems
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K2211/00—Chemical nature of organic luminescent or tenebrescent compounds
- C09K2211/10—Non-macromolecular compounds
- C09K2211/1003—Carbocyclic compounds
- C09K2211/1014—Carbocyclic compounds bridged by heteroatoms, e.g. N, P, Si or B
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K2211/00—Chemical nature of organic luminescent or tenebrescent compounds
- C09K2211/18—Metal complexes
- C09K2211/185—Metal complexes of the platinum group, i.e. Os, Ir, Pt, Ru, Rh or Pd
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K2211/00—Chemical nature of organic luminescent or tenebrescent compounds
- C09K2211/18—Metal complexes
- C09K2211/188—Metal complexes of other metals not provided for in one of the previous groups
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K2101/00—Properties of the organic materials covered by group H10K85/00
- H10K2101/10—Triplet emission
Definitions
- the invention belongs to the field of organic electroluminescence and can be applied to the field of color flat panel display and illumination. Specifically, it relates to a PtAg 2 (meso-/rac-dpmppe) heterotrinuclear metal organic alkyne complex for preparing an organic light emitting diode.
- PtAg 2 meso-/rac-dpmppe
- Organic electroluminescence is a phenomenon in which organic light-emitting diodes (OLEDs) directly convert electrical energy into light energy under the action of a low DC voltage of 3-12V. It has a very wide application in the field of flat panel display and illumination. Compared with traditional lighting and display technology, organic electroluminescence has many advantages such as full color display, wide viewing angle, high definition, fast response, low power consumption, low temperature resistance, etc.; and organic light-emitting device has simple structure, ultra-light, ultra-thin Excellent characteristics such as flexible folding.
- OLEDs organic light-emitting diodes
- the core of the organic light-emitting diode is a light-emitting film material.
- most of the phosphorescent materials used in commercial organic electroluminescent devices are electrically neutral ring metal ruthenium (III) complexes, which are doped into an organic host material to form a light-emitting layer. Its biggest advantage is that it is convenient for vacuum thermal evaporation to produce an ideal thin film luminescent layer.
- the equipment required for vacuum evaporation is expensive, and in particular, the process for preparing an organic doped luminescent film layer is complicated, which greatly limits the industrial development and commercial application of the organic light emitting diode in large-area full-color display.
- ionic phosphorescent organometallic compounds with high quantum efficiency as a luminescent material is a viable alternative.
- electro-neutral compounds ionic phosphorescent metal complexes are simpler, cheaper, more stable, and soluble in organic solvents. They are suitable for large-area solution spin coating or inkjet printing to form films. Device preparation costs.
- Another object of the present invention is to provide a luminescent material containing the above ionic phosphorescent metal complex and use these luminescent materials to prepare a high performance organic light emitting diode.
- R may be the same or different and are independently selected from the group consisting of alkyl, aryl, heteroaryl, heteroaryl aryl,
- R' may be the same or different and are independently selected from the group consisting of an alkyl group, an aryl group, and a heteroaryl group;
- alkyl, aryl, heteroaryl group may be substituted by one or more substituents selected from the group consisting of alkyl, alkenyl, alkynyl, alkoxy, amino, halogen, haloalkyl, Aryl;
- X is selected from halogen
- a m-, A n- is a monovalent or divalent anion, m or n is 1, 2, for example the anion ClO 4 -, PF 6 -, SbF 6 -, BF 4 -, SiF 6 2- and the like.
- ⁇ stands for bridging.
- the complex of formula (I) is a racemic structure and the complex of formula (II) is a meso structure.
- the stereostructure of the phosphorescent metal complex of formula (I) or formula (II) is as follows:
- the alkyl group means a straight or branched alkyl group having 1 to 10 carbon atoms, preferably 1 to 6 carbon atoms.
- the alkenyl group represents a linear or branched alkenyl group having 2 to 6 carbon atoms, for example, ethylene, propylene, butylene or the like.
- the alkynyl group represents a linear or branched alkynyl group having 2 to 6 carbon atoms, for example, acetylene, propyne, butyne or the like.
- the aryl group means a monocyclic, polycyclic aromatic group having 6 to 20 carbon atoms, and representative aryl groups include a phenyl group, a naphthyl group and the like.
- the heteroaryl group means a monocyclic or polycyclic heteroaromatic group having 1 to 20 carbon atoms and comprising at least 1, preferably 1 to 4, hetero atoms selected from N, S, O, representative Heteroaryl groups include: pyrrolyl, pyridyl, pyrimidinyl, imidazolyl, thiazolyl, oxazolyl, oxadiazolyl, oxazolyl, quinolyl, quinazolinyl, fluorenyl, phenothiazine Base.
- the A m- or A n- is preferably ClO 4 - , PF 6 - , SiF 6 2- or the like, and m/n is 1, 2.
- the R is preferably an aryl group, a carbazolyl group, a phenothiazine group or a carbazolylaryl group.
- the aryl, oxazolyl, phenothiazine group may be optionally substituted by one or more substituents selected from the group consisting of alkyl, alkoxy, amino, halogen, haloalkyl, aryl;
- R' is preferably an aryl group, a nitrogen-containing heterocyclic ring (for example, a carbazolyl group), and the aryl group or the nitrogen-containing heterocyclic ring may be optionally substituted by one or more substituents selected from the group consisting of an alkyl group and an alkane.
- R is phenyl, alkyl-phenyl, haloalkyl-phenyl, carbazolyl-phenyl, oxazolyl, alkyl-carbazolyl, phenyl-carbazolyl, phenothiazine Alkyl-phenothiazine; R' is phenyl, alkylphenyl, oxazolyl, alkyl-carbazolyl, phenyl-carbazolyl.
- the specific structure of the ionic phosphorescent metal complex is preferably as follows:
- the invention also provides a preparation method of the phosphorescent complex of the formula (I), comprising the following steps: 1) rac-(PPh 2 CH 2 PPhCH 2 -) 2 and Pt(PPh 3 ) 2 (C ⁇ CR 2 is reacted in a solvent to obtain an intermediate; 2) the intermediate obtained in the step 1) is further reacted with [Ag(tht)](A n- ) and PR' 3 in a solvent to obtain the formula (I) ) Phosphorescent complexes.
- the tht tetrahydrothiophene
- the A n- , R, R′, and X are as defined above.
- the invention also provides a preparation method of the phosphorescent complex of the formula (II), comprising the steps of: A) meso-(PPh 2 CH 2 PPhCH 2 -) 2 and Pt(PPh 3 ) 2 (C ⁇ CR 2 ) reacting in a solvent to obtain an intermediate; B) reacting PR' 3 , n Bu 4 NX, [Ag(tht)] (A m- ) with the intermediate obtained in the step A) in a solvent to obtain Said (II) phosphorescent complex.
- the tht tetrahydrothiophene
- the A m- , R, R′, and X are as defined above.
- the solvent is preferably a halogenated hydrocarbon such as dichloromethane.
- the intermediate obtained by the reaction is concentrated and recrystallized.
- the solvent is preferably a halogenated hydrocarbon such as dichloromethane.
- PR' 3 and n Bu 4 NX are first mixed, and then the mixed solution and [Ag(tht)] (A m- ) are added to the middle obtained by dissolving the above step A). In the solution of the body.
- the molar ratio of 3 is from 1 to 1.5:1 to 1.5:2 to 3:2 to 3, preferably the molar ratio is 1:1:2:2; meso-(PPh 2 CH 2 PPhCH 2 -) 2 :Pt(PPh 3 2 (C ⁇ CR) 2 : [Ag(tht)](A m- ): n Bu 4 NX: PR' 3 molar ratio is 1 to 1.5:1 to 1.5:2 to 3:1 to 1.5:1 ⁇ 1.5, preferably the molar ratio is 1:1:2:1:1.
- the reactions are all carried out at room temperature.
- it is purified by silica gel column chromatography.
- the phosphorescent complex of the formula (I) or the formula (II) according to the invention has strong phosphorescence emission in both solid and film, and the phosphorescence quantum yield is higher than 50% in the film; and the color distribution of the emitted light is wide. From sky blue to orange red. Therefore, it can be used as a light-emitting layer dopant for the preparation of an organic light-emitting diode.
- the invention also provides the use of the phosphorescent complex for organic light emitting diodes.
- the present invention provides an organic light emitting diode comprising a light emitting layer, wherein the light emitting layer contains the phosphorescent complex of the formula (I) or (II) according to the present invention.
- the phosphorescent complex of the formula (I) according to the present invention preferably accounts for 3-20% by weight, more preferably 5-10%, of all materials, and further preferably, the present invention
- the phosphorescent complex of the formula (I) is doped into the host material as a light-emitting layer in a weight percentage of 6%;
- the phosphorescent complex of the formula (II) according to the invention preferably accounts for 5-25% by weight of all materials (% by weight) More preferably, it is 8-15%, and further preferably, the phosphorescent complex of the formula (II) according to the present invention is doped into the host material as a light-emitting layer at a weight percentage of 10%.
- the structure of the organic light emitting diode can be various structures known in the art.
- the anode layer, the hole injection layer, optionally the hole transport layer, the light-emitting layer, the electron transport layer, the electron injection layer, and the cathode layer are included.
- the organic light emitting diode further includes a substrate (eg, a glass substrate).
- the hole transport layer may be CuSCN, CuI, CuBr.
- the light-emitting layer contains the phosphorescent complex of the present invention, and a substance having a hole transporting property and/or a substance having an electron transporting property.
- the substance having a hole transporting property may be 2,6-DCZPPY (2,6-bis(3-(9-carbazole)phenyl)pyridine), mCP (1,3-bis(9-carbazolyl) a kind of benzene), CBP (4,4'-bis(9-carbazole)-1,1'-biphenyl), or TCTA (tris(4-(9-carbazole)phenyl)amine) Or a variety.
- the substance having electron transporting property may be OXD-7 (1,3-bis(5-(4-(tert-butyl)phenyl)-1,3,4-oxadiazol-2-yl)benzene);
- the electron transport layer may be BmPyPB(3,3",5,5"-tetrakis(3-pyridyl)-1,1':3',1"-terphenyl), TPBi (1,3,5-three) (1-phenyl-1H-benzo[d]imidazol-2-yl)benzene), BCP (2,9-dimethyl-4,7-diphenyl-1,10-phenanthroline) or OXD One or more of -7; the electron injecting layer is LiF, and the cathode is Al.
- the device structure containing the phosphorescent complex of the formula (I) is preferably: ITO/PEDOT: PSS (50 nm) / CuSCN (30 nm) / 70.5% 2, 6-DCZPPY: 23.5% OXD-7: 6% Wt
- Formula (I) complex (50 nm) / BmPyPB (50 nm) / LiF (1 nm) / Al (100 nm), or ITO / PEDOT: PSS (50 nm) / 70.5% mCP: 23.5% OXD-7: 6% Wt
- the complex of the formula (I) of the present invention (50 nm) / BmPyPB (50 nm) / LiF (1 nm) / Al (100 nm);
- the device structure containing the phosphorescent complex of the formula (II) is preferably: ITO / PEDOT: PSS ( 50 nm) / CuSCN (30 nm) / 90% 2,
- ITO is an indium tin oxide conductive film
- PEDOT:PSS is poly(3,4-ethylenedioxythiophene)-poly(styrenesulfonic acid)
- 2,6-DCZPPY is (2,6-di(3-) (9-carbazolyl)phenyl)pyridine)
- mCP is (1,3-bis(9-carbazolyl)benzene)
- OXD-7 is 1,3-bis(5-(4-(tert-butyl) Phenyl)-1,3,4-oxadiazol-2-yl)benzene
- BmPyPB is (3,3",5,5"-tetrakis(3-pyridyl)-1,1':3', 1"-terphenyl).
- the invention also provides a method for preparing the organic light emitting diode, comprising: 1) preparing a hole injection layer in an organic light emitting diode on a anode by a solution method; 2) optionally preparing an organic light emitting diode by a solution method; a hole transport layer; 3) preparing a light-emitting layer doped with the phosphorescent complex of the present invention by a solution method; 4) preparing an electron transport layer, an electron injection layer, and a cathode layer by a vacuum thermal evaporation method in this order.
- the method comprises: first preparing a hole injection layer using water-soluble PEDOT:PSS; secondly, using a diethyl sulfide solution of cuprous cyanide cyanide Preparing a hole transport layer; using 2,6-DCZPPY having hole transporting property and OXD-7 having electron transporting property as a mixed host material, and doping with the phosphorescent complex of the formula (I) according to the present invention to prepare luminescence a Bmpypb electron transport layer, a LiF electron injection layer, and an Al cathode layer are sequentially prepared by a vacuum thermal evaporation method; for the phosphorescent complex of the formula (II), the method comprises: first using a water-soluble PEDOT:PSS Preparing a hole injection layer; secondly, preparing a hole transport layer by using a solution of copper thiocyanate in diethyl sulfide; and further utilizing the phosphorescence of the
- a PEDOT:PSS hole injection layer, a 2,6-DCZPPY:OXD-7 or a 2,6-DCZPPY doped luminescent layer is respectively prepared by a solution spin coating method, and a BmPyPB electron transport layer is used.
- the film was prepared by vacuum thermal evaporation using a LiF electron injection layer.
- the organic light emitting diode prepared from the phosphorescent complex of the present invention has excellent performance and has high electro-optical conversion efficiency.
- the invention further provides for the use of the organic light emitting diode, which can be used in the field of flat panel display and everyday illumination.
- the present invention has the following advantages:
- the phosphorescent complex of the present invention has strong phosphorescence emission in both solid and film, and the quantum efficiency of thin film phosphorescence is higher than 50% or even as high as 90%;
- the present invention utilizes a phosphorescent Pt-Ag heterometallic complex for the first time to assemble an organic light-emitting device as a light-emitting material, and the organic light-emitting diode prepared by using the phosphorescent complex of the present invention as a light-emitting layer dopant has high electroluminescence external quantum conversion efficiency;
- the present invention utilizes an orthogonal solution method to prepare a hole injection layer and a light-emitting layer of an organic light-emitting diode, which can greatly reduce device fabrication costs;
- the ligand of the phosphorescent complex of the present invention has an internal/external racemic different configuration, and the electroluminescence changes from sky blue to orange red, and the luminous efficiency of each color is high.
- Figure 1 is a schematic view of the structure of the device and the chemical structure of the organic material.
- dpmppe represents (PPh 2 CH 2 PPhCH 2 -) 2
- carb represents carbazolyl
- PhBu t -4 represents 4-tert-butyl-phenyl
- 9-Ph-carb-3 represents 9-benzene.
- Base-carbazol-3-yl 9-Et-carb-3 represents 9-ethylcarbazol-3-yl
- PhCF 3 -4 represents 4-trifluoromethyl-phenyl
- 9-(4-Ph) -carb represents 9-(4-phenyl)-carbazolyl
- 10-Et-PTZ-3 represents 10-ethylphenothiazine-3-yl
- tht is tetrahydrothiophene.
- Example 1 Complex [PtAg 2 (rac-dpmppe) (C ⁇ CC 6 H 4 Bu t -4) 2 ⁇ PhP(9-Ph-carb-3) 2 ⁇ 2 ](ClO 4 ) 2 (rac- 1) Preparation
- Example 2 Preparation of complex [PtAg 2 (rac-dpmppe) ⁇ (C ⁇ C-4) C 6 H 4 -carb-9 ⁇ 2 (PPh 3 ) 2 ](ClO 4 ) 2 (rac-2)
- the preparation method is basically the same as that in Example 1, except that Pt(PPh 3 ) 2 ⁇ (C ⁇ C-4)C 6 H 4 -carb-9 ⁇ 2 is used instead of Pt(PPh 3 ) 2 (C ⁇ CC 6 H 4 Bu t -4) 2 , PPh 3 replaces PhP(9-Ph-carb-3) 2 . Yield: 71%. Calcd for C 116 H 92 Ag 2 Cl 2 N 2 O 8 P 6 Pt: C, 60.33; H, 4.02; N, 1.21. Measured: C, 60.12; H, 4.02; N, 1.15. Spray mass spectrum m/z (%): 1055.1713 (100%, [M-2ClO 4 ] 2+ ).
- Example 3 Preparation of complex [PtAg 2 (rac-dpmppe) ⁇ C ⁇ C-(9-Ph-carb-3) ⁇ 2 (PPh 3 ) 2 ](ClO 4 ) 2 (rac-3)
- the preparation method is basically the same as that in Example 1, except that Pt(PPh 3 ) 2 (C ⁇ C-(9-Ph-carb-3)) 2 is used instead of Pt(PPh 3 ) 2 (C ⁇ CC 6 H 4 ). Bu t -4) 2 , PPh 3 replaces PhP(9-Ph-carb-3) 2 . Yield: 71%. Calcd for C 116 H 92 Ag 2 Cl 2 N 2 O 8 P 6 Pt: C, 60.33; H, 4.02; N, 1.21. Measured: C, 60.10; H, 4.05; N, 1.16. Spray mass spectrum m/z (%): 1055.1717 (100%, [M-2ClO 4 ] 2+ ).
- the preparation method is basically the same as that in Example 1, except that Pt(PPh 3 ) 2 ⁇ C ⁇ C-(9-Ph-carb-3) ⁇ 2 is used instead of Pt(PPh 3 ) 2 (C ⁇ CC 6 H 4 ).
- -Bu t -4) 2 P(9-Et-carb-3) 3 replaces PhP(9-Ph-carb-3) 2 .
- Elemental analysis (C 164 H 134 Ag 2 Cl 2 N 8 O 8 P 6 Pt): C, 65.39; H, 4.48; N, 3.72. Measured: C, 65.14; H, 4.53; N, 3.53.
- the preparation method is basically the same as that in Example 1, except that Pt(PPh 3 ) 2 ⁇ C ⁇ C-(9-Et-carb-3) ⁇ 2 is used instead of Pt(PPh 3 ) 2 (C ⁇ CC 6 H 4 ).
- Bu t -4) 2 , P(9-Et-carb-3) 3 replaces PhP(9-Ph-carb-3) 2 .
- Elemental analysis (C 156 H 134 Ag 2 Cl 2 N 8 O 8 P 6 Pt) Calcd: C, 64.25; H, 4.63 ; N, 3.84 measured values: C, 64.02; H, 4.65 ; N, 3.58 electrically.
- Example 6 Complex [PtAg 2 (rac-dpmppe) ⁇ C ⁇ C-(10-Et-PTZ-3) ⁇ 2 ⁇ P(9-Et-carb-3) 3 ⁇ 2 ](ClO 4 ) 2 Preparation of (rac-6).
- the preparation method is basically the same as that in Example 1, except that Pt(PPh 3 ) 2 ⁇ C ⁇ C-(10-Et-PTZ-3) ⁇ 2 is used instead of Pt(PPh 3 ) 2 (C ⁇ CC 6 H 4 ).
- Bu t -4) 2 , P(9-Et-carb-3) 3 replaces PhP(9-Ph-carb-3) 2 .
- Elemental analysis (C 156 H 134 Ag 2 Cl 2 N 8 O 8 P 6 PtS 2 ): C, 62.86; H, 4.53; N, 3.76. Measured: C, 62.62; H, 4.57; N, 3.59.
- Example 7 [Cl PtAg 2 (meso -dpmppe) (C ⁇ CC 6 H 4 CF 3 -4) 2 (PPh 3)] (ClO 4) (meso-7) with the preparations.
- Example 8 Preparation of complex [PtAg 2 (meso-dpmppe) (C ⁇ CC 6 H 4 Bu t -4) 2 (PPh 3 )Cl](ClO 4 ) (meso-8).
- the preparation method is basically the same as that in Example 7, except that Pt(PPh 3 ) 2 (C ⁇ CC 6 H 4 Bu t -4) 2 is used instead of Pt(PPh 3 ) 2 (C ⁇ CC 6 H 4 CF 3 - 4) 2 .
- Elemental analysis C 82 H 79 Ag 2 Cl 2 O 4 P 5 Pt: C, 55.80; H, 4.51. Measured: C, 56.02; H, 4.74.
- Infrared spectrum (KBr, cm -1 ): 2092w (C ⁇ C), 1093s (ClO 4 - ).
- Example 9 Complex [PtAg 2 (meso-dpmppe) (C ⁇ CC 6 H 4 Bu t -4) 2 ⁇ P(9-Et-carb-3) 3 ⁇ Cl](ClO 4 )(meso-9 Preparation of).
- the preparation method is basically the same as that in Example 7, except that Pt(PPh 3 ) 2 (C ⁇ CC 6 H 4 Bu t -4) 2 is used instead of Pt(PPh 3 ) 2 (C ⁇ CC 6 H 4 CF 3 - 4) 2 , P(9-Et-carb-3) 3 replaces PPh 3 .
- Elemental analysis (C 106 H 100 Ag 2 Cl 2 N 3 O 4 P 5 Pt): C, 60.15; H, 4.76; N, 1.99. Measured: C, 60.32; H, 4.73; N, 1.88.
- Example 10 Complex [PtAg 2 (meso-dpmppe) (C ⁇ CC 6 H 4 Bu t -4) 2 ⁇ P(9-Et-carb-3) 3 ⁇ I](ClO 4 )(meso-10 Preparation of).
- the preparation method is basically the same as that in Example 7, except that Pt(PPh 3 ) 2 (C ⁇ CC 6 H 4 Bu t -4) 2 is used instead of Pt(PPh 3 ) 2 (C ⁇ CC 6 H 4 CF 3 - 4) 2 , P(9-Et-carb-3) 3 replaces PPh 3 , n Bu 4 NI instead of n Bu 4 NCl. Yield: 72%. Elemental analysis (C 106 H 100 Ag 2 ClIN 3 O 4 P 5 Pt) Calcd: C, 57.66; H, 4.56 ; N, 1.90 measured values:. C, 57.57; H, 4.60; N, 1.83 electrospray mass spectrometry.
- Example 11 Complex [PtAg 2 (meso-dpmppe) (C ⁇ C-(10-Et-PTZ-3)) 2 ⁇ P(9-Et-carb-3) 3 ⁇ ( ⁇ -I)]( Preparation of ClO 4 ) (meso-11).
- the preparation method is basically the same as that in Example 7, except that Pt(PPh 3 ) 2 ⁇ C ⁇ C-(10-Et-PTZ-3) ⁇ 2 is used instead of Pt(PPh 3 ) 2 (C ⁇ CC 6 H 4 ).
- Calcd for C 114 H 98 Ag 2 ClIN 5 O 4 P 5 PtS 2 C, 57.19; H, 4.13; N, 2.93. Measured: C, 57.42; H, 4.33; N, 2.84.
- the complexes rac-1, rac-4, rac-5, rac-6 prepared in Examples 1, 4, 5, and 6 were tested on a Edinburgh FLS920 fluorescence spectrometer in solid powder and 70.5% 2,6-DCZPPY: 23.5.
- %OXD-7 6% of the complex rac-1, 4, 5, or 6 (by weight) film of the present invention and the complex meso-11 prepared in Example 11 in solid powder and 90% 2,6-DCZPPY : 10% of the excitation spectrum, emission spectrum, luminescence lifetime and luminescence quantum yield in the meso-11 (weight ratio) film of the present invention.
- the luminescence quantum yield of the solid powder sample was measured using an integrating sphere having a diameter of 142 mm.
- the solid state emission wavelength and quantum yield of the complex rac-1, rac-4, rac-5, rac-6, or meso-11 were 500 nm and 15.1% (rac-1), 566 nm, and 37.1%, respectively (rac- 4), 580 nm and 30.4% (rac-5), 662 nm and 1.7% (rac-6), 600 nm and 8.1% (meso-11);
- Example 13 Preparation and electroluminescence performance testing of organic light emitting diode devices
- the device structure is: ITO/PEDOT: PSS (50 nm) / CuSCN ( 30 nm) / 90% 2, 6-DCZPPY: 10% of the complex of the present invention meso-11 (50 nm) / Bmpypb (50 nm) / LiF (1 nm) / Al (100 nm).
- the ITO substrate was first washed with deionized water, acetone, and isopropanol, and then treated with UV-ozone for 15 minutes.
- the filtered PEDOT:PSS aqueous solution was spin-coated on an ITO substrate at 4,800 rpm on a spin coater, and dried at 140 ° C for 20 minutes to obtain a 50 nm-thick hole injection layer.
- a solution of CuSCN in diethyl sulfide (10 mg/mL) was spin-coated at a rate of 4,800 rpm to a PEDOT:PSS hole injection layer, and after drying at 120 ° C for 30 minutes, a hole transport layer having a thickness of 30 nm was obtained.
- the filtered concentration was 7.0 mg/mL of 70.5% 2,6-DCZPPY: 23.5% XD-7: 6% of the complex of the present invention rac-1, rac-4, rac-5, or rac. -6 (% by weight) or 5.5 mg/mL of 90% 2,6-DCZPPY: 10% of the complex meso-11 (% by weight) of the dichloromethane solution was spin-coated to PEDOT at 2100 rpm: A light-emitting layer having a thickness of 50 nm was formed on the PSS film.
- the ITO substrate was placed in a vacuum chamber having a vacuum of not less than 4 ⁇ 10 -4 Pa, and a 50 nm thick Bmpypb, a 1 nm thick LiF electron injection layer, and a 100 nm thick Al were sequentially thermally deposited as device cathodes.
- Electroluminescence performance parameters include electroluminescence wavelength ( ⁇ EL ), ignition voltage (V on ), maximum luminance (L max ), maximum current efficiency (CE max ), maximum power efficiency (PE max ), maximum external quantum efficiency (EQE max ) is listed in Table 1.
Landscapes
- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Physics & Mathematics (AREA)
- Inorganic Chemistry (AREA)
- Optics & Photonics (AREA)
- High Energy & Nuclear Physics (AREA)
- Electroluminescent Light Sources (AREA)
- Devices For Indicating Variable Information By Combining Individual Elements (AREA)
Abstract
Description
Claims (10)
- 一种离子型磷光金属配合物,其结构为如下式(I)或式(II)所示:[PtAg2{rac-(PPh2CH2PPhCH2-)2}(C≡CR)2(PR'3)2]2+An- 2/n; (I)或[PtAg2{meso-(PPh2CH2PPhCH2-)2}(C≡CR)2(PR'3)(μ-X)]+ mAm- (II)其中,R可相同或不同,独立地选自:烷基、芳基、杂芳基、杂芳基芳基;R'可相同或不同,独立地选自:烷基、芳基、杂芳基;所述的烷基、芳基、杂芳基均可被一个或多个取代基取代,所述取代基选自烷基、烯基、炔基、烷氧基、氨基、卤素、卤烷基、芳基;X选自卤素;Am-、An-为一价或二价阴离子,m或n为1、或2,所述阴离子例如为ClO4 -、PF6 -、SbF6 -、BF4 -、SiF6 2-,μ代表桥联。
- 根据权利要求1或2所述的磷光金属配合物,其中,所述R为芳基、咔唑基、吩噻嗪基、咔唑基芳基;所述芳基、咔唑基、吩噻嗪基可任选被一个或多个取代基取代,所述取代基选自烷基、烷氧基、氨基、卤素、卤烷基、芳基;所述R'为芳基、含氮杂环,所述芳基、含氮杂环可任选被一个或多个取代基取代,所述取代基选自烷基、烷氧基、氨基、卤素、卤烷基、芳基;进一步优选的,R为苯基、烷基-苯基、卤烷基-苯基、咔唑基-苯基、咔唑基、烷基-咔唑基、苯基-咔唑基、吩噻嗪基、烷基-吩噻嗪基;R'为苯基、烷基 苯基、咔唑基、烷基-咔唑基、苯基-咔唑基。
- 权利要求1-4任一项所述的磷光金属配合物的制备方法,其中,所述式(I)磷光金属配合物的制备方法包括如下步骤:1)将rac-(PPh2CH2PPhCH2-)2和Pt(PPh3)2(C≡CR)2在溶剂中反应,得到中间体;2)再将步骤1)中得到的中间体与[Ag(tht)](An-)和PR'3在溶剂中反应,得到所述式(I)磷光配合物;其中,所述tht(tetrahydrothiophene)为四氢噻吩,所述An-、R、R'、X如权利要求1-4任一项所定义;或者,所述式(II)磷光配合物的制备方法包括如下步骤:A)将meso-(PPh2CH2PPhCH2-)2和Pt(PPh3)2(C≡CR)2在溶剂中反应,得到中间体;B)将PR'3、nBu4NX、[Ag(tht)](Am-)与步骤A)中得到的中间体在溶剂中反应,得到所述式(II)磷光配合物;其中,所述tht(tetrahydrothiophene)为四氢噻吩,所述Am-、R、R'、X如权利要求1-4任一项所定义。
- 权利要求1-4任一项所述的磷光金属配合物用于有机发光二极管的用途。
- 一种有机发光二极管,包括发光层,其中,所述发光层中含有权利要求1-4任一项所述的式(I)或式(II)磷光配合物;优选的,在所述发光层中,权利要求1-4任一项所述的式(I)磷光配合物占所有材料的3-20%(重量百分比);权利要求1-4任一项所述的式(II)磷光配合物占所有材料的5-25%(重量百分比)。
- 权利要求7所述的有机发光二极管,其中,所述有机发光二极管还包括:阳极层、空穴注入层、任选地空穴传输层、发光层、电子传输层、电子注入层、阴极层。
- 权利要求8所述的有机发光二极管,其中,所述阳极为铟锡氧化物,所述空穴注入层为PEDOT:PSS(PEDOT:PSS=聚(3,4-亚乙二氧基噻吩)-聚(苯乙烯磺酸));所述空穴传输层为CuSCN、CuI、CuBr;所述发光层含有权利要求1-4任一项所述的磷光配合物,以及具有空穴传输特性的物质和/或具有电子传输特性的物质;所述电子传输层为BmPyPB(3,3”,5,5”-四(3-吡啶基)-1,1':3',1”-三联苯)、TPBi(1,3,5-三(1-苯基-1H-苯并[d]咪唑-2-基)苯)、BCP(2,9-二甲基-4,7-二苯基-1,10-菲珞啉)或OXD-7中的一种或多种;所述电子注入层为LiF,所述阴极为Al。优选的,含有所述式(I)磷光配合物的器件结构为:ITO/PEDOT:PSS/CuSCN/70.5%2,6-DCZPPY:23.5%OXD-7:6%wt权利要求1-4任一项所述的式(I)配合物/BmPyPB/LiF/Al,或者ITO/PEDOT:PSS/70.5%mCP:23.5%OXD-7:6%wt权利要求1-4任一项所述的式(I)配合物/BmPyPB/ LiF/Al;含有所述式(II)磷光配合物的器件结构为:ITO/PEDOT:PSS/CuSCN/90%2,6-DCZPPY:10%wt权利要求1-4任一项所述的式(II)配合物/BmPyPB/LiF/Al,或者ITO/PEDOT:PSS/90%mCP:10%wt权利要求1-4任一项所述的式(II)配合物/BmPyPB/LiF/Al;其中,ITO为氧化铟锡导电薄膜,PEDOT:PSS为聚(3,4-亚乙二氧基噻吩)-聚(苯乙烯磺酸),2,6-DCZPPY为(2,6-二(3-(9-咔唑基)苯基)吡啶)、mCP为(1,3-双(9-咔唑基)苯),OXD-7为1,3-双(5-(4-(叔丁基)苯基)-1,3,4-噁二唑-2-基)苯,BmPyPB为(3,3”,5,5”-四(3-吡啶基)-1,1':3',1”-三联苯)。
- 权利要求7-9任一项所述的有机发光二极管的用途,其用于平板显示和日常照明领域中。
Priority Applications (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| EP17881622.9A EP3543248B1 (en) | 2016-12-14 | 2017-09-20 | PHOSPHORESCENT PtAg2 COMPLEX, PREPARATION METHOD THEREFOR AND USE THEREOF |
| JP2019531368A JP6884210B2 (ja) | 2016-12-14 | 2017-09-20 | 燐光PtAg2錯体並びにその製造方法及び用途 |
| US16/469,896 US11233206B2 (en) | 2016-12-14 | 2017-09-20 | Phosphorescent PtAg2 complex, preparation method therefor and use thereof |
| KR1020197018716A KR102527776B1 (ko) | 2016-12-14 | 2017-09-20 | 인광성 PtAg₂ 착물, 이의 제조 방법 및 이의 용도 |
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201611155024.XA CN106632514B (zh) | 2016-12-14 | 2016-12-14 | 一种磷光PtAg2配合物及其制备方法和用途 |
| CN201611155024.X | 2016-12-14 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| WO2018107841A1 true WO2018107841A1 (zh) | 2018-06-21 |
Family
ID=58822079
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| PCT/CN2017/102504 Ceased WO2018107841A1 (zh) | 2016-12-14 | 2017-09-20 | 一种磷光PtAg2配合物及其制备方法和用途 |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US11233206B2 (zh) |
| EP (1) | EP3543248B1 (zh) |
| JP (1) | JP6884210B2 (zh) |
| KR (1) | KR102527776B1 (zh) |
| CN (1) | CN106632514B (zh) |
| WO (1) | WO2018107841A1 (zh) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2022549155A (ja) * | 2019-09-17 | 2022-11-24 | 中国科学院福建物質結構研究所 | ヘテロ三核金属有機アルキン錯体及びその製造方法並びに用途 |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106632514B (zh) | 2016-12-14 | 2019-10-29 | 中国科学院福建物质结构研究所 | 一种磷光PtAg2配合物及其制备方法和用途 |
| CN108440609B (zh) * | 2018-04-19 | 2020-02-21 | 中国科学院福建物质结构研究所 | 一种磷光PtM3异四核配合物及其制备方法和用途 |
| CN111662340B (zh) * | 2019-03-07 | 2021-09-21 | 中国科学院福建物质结构研究所 | 一种Pt(II)-M(I)异三核配合物及其制备方法和用途 |
| CN111909222B (zh) * | 2020-08-18 | 2022-02-18 | 中国科学院福建物质结构研究所 | 磷光PtM2(M = Cu, Ag, Au)配合物及其有机发光二极管 |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104892685A (zh) * | 2015-04-13 | 2015-09-09 | 中国科学院福建物质结构研究所 | 一种离子型磷光PtM2配合物及其制备方法和用途 |
| CN105481910A (zh) * | 2015-11-20 | 2016-04-13 | 中国科学院福建物质结构研究所 | 一种高性能的有机发光二极管 |
| CN106632514A (zh) * | 2016-12-14 | 2017-05-10 | 中国科学院福建物质结构研究所 | 一种磷光PtAg2配合物及其制备方法和用途 |
Family Cites Families (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP5200226B2 (ja) * | 2005-03-25 | 2013-06-05 | 国立大学法人 長崎大学 | 金属錯体、発光素子、表示装置 |
| US7893611B2 (en) * | 2006-11-01 | 2011-02-22 | Nagasaki University | Metal complex, light-emitting device and display |
| DE102008033563A1 (de) * | 2008-07-17 | 2010-01-21 | Merck Patent Gmbh | Komplexe mit kleinen Singulett-Triplett-Energie-Abständen zur Verwendung in opto-elektronischen Bauteilen (Singulett-Harvesting-Effekt) |
| WO2012039347A1 (ja) * | 2010-09-21 | 2012-03-29 | 国立大学法人 長崎大学 | 金属錯体、発光素子、表示装置 |
| DE102011079857B4 (de) * | 2011-07-26 | 2013-03-21 | Eberhard-Karls-Universität Tübingen | Komplexverbindungen mit vierzähnigen Liganden und ihre Verwendung im opto-elektronischen Bereich |
| CN104232076B (zh) * | 2013-06-10 | 2019-01-15 | 代表亚利桑那大学的亚利桑那校董会 | 具有改进的发射光谱的磷光四齿金属络合物 |
-
2016
- 2016-12-14 CN CN201611155024.XA patent/CN106632514B/zh active Active
-
2017
- 2017-09-20 JP JP2019531368A patent/JP6884210B2/ja active Active
- 2017-09-20 US US16/469,896 patent/US11233206B2/en active Active
- 2017-09-20 KR KR1020197018716A patent/KR102527776B1/ko active Active
- 2017-09-20 EP EP17881622.9A patent/EP3543248B1/en active Active
- 2017-09-20 WO PCT/CN2017/102504 patent/WO2018107841A1/zh not_active Ceased
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104892685A (zh) * | 2015-04-13 | 2015-09-09 | 中国科学院福建物质结构研究所 | 一种离子型磷光PtM2配合物及其制备方法和用途 |
| CN105481910A (zh) * | 2015-11-20 | 2016-04-13 | 中国科学院福建物质结构研究所 | 一种高性能的有机发光二极管 |
| CN106632514A (zh) * | 2016-12-14 | 2017-05-10 | 中国科学院福建物质结构研究所 | 一种磷光PtAg2配合物及其制备方法和用途 |
Non-Patent Citations (3)
| Title |
|---|
| See also references of EP3543248A4 * |
| SHU, HUIXING ET AL.: "Photophysical and Electroluminescent Properties of PtAg2 Acetylide Complexes Supported with meso- and rac-Tetraphosphine", INORGANIC CHEMISTRY, vol. 56, no. 16, 25 April 2017 (2017-04-25), pages 9461 - 9473, XP055492968 * |
| ZHANG, LIYI ET AL.: "Spectroscopic and Phosphorescent Modulation in Triphosphine-Supported PtAg2 Heterotrinuclear Alkynyl Complexes", INORGANIC CHEMISTRY, vol. 52, no. 9, 12 April 2013 (2013-04-12), pages 5167 - 5175, XP055492973 * |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2022549155A (ja) * | 2019-09-17 | 2022-11-24 | 中国科学院福建物質結構研究所 | ヘテロ三核金属有機アルキン錯体及びその製造方法並びに用途 |
| JP7308357B2 (ja) | 2019-09-17 | 2023-07-13 | 中国科学院福建物質結構研究所 | ヘテロ三核金属有機アルキン錯体及びその製造方法並びに用途 |
Also Published As
| Publication number | Publication date |
|---|---|
| US11233206B2 (en) | 2022-01-25 |
| CN106632514B (zh) | 2019-10-29 |
| EP3543248A1 (en) | 2019-09-25 |
| KR102527776B1 (ko) | 2023-05-03 |
| CN106632514A (zh) | 2017-05-10 |
| US20190319200A1 (en) | 2019-10-17 |
| EP3543248B1 (en) | 2021-11-03 |
| EP3543248A4 (en) | 2020-07-01 |
| KR20190098161A (ko) | 2019-08-21 |
| JP6884210B2 (ja) | 2021-06-09 |
| JP2020515032A (ja) | 2020-05-21 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN102695777B (zh) | 电活性组合物和用该组合物制得的电子器件 | |
| CN102239230B (zh) | 光敏组合物和用所述组合物制得的电子器件 | |
| CN114907412B (zh) | 有机电致发光材料及其器件 | |
| CN105669697B (zh) | 有机金属化合物、及包含其的有机发光装置 | |
| CN114621199B (zh) | 一种有机电致发光材料及其器件 | |
| CN104892685B (zh) | 一种离子型磷光PtM2配合物及其制备方法和用途 | |
| CN114181235B (zh) | 多环化合物及其器件 | |
| WO2018107841A1 (zh) | 一种磷光PtAg2配合物及其制备方法和用途 | |
| CN113683643A (zh) | 一种有机发光材料 | |
| CN114516890B (zh) | 有机电致发光材料及其器件 | |
| CN105481910B (zh) | 一种高性能的有机发光二极管 | |
| CN121698922A (zh) | 一种电致发光材料及其器件 | |
| CN119735581A (zh) | 一种有机电致发光材料及其器件 | |
| Ding et al. | Novel spiro-based host materials for application in blue and white phosphorescent organic light-emitting diodes | |
| KR20230140417A (ko) | 유기 전계발광재료 및 그 소자 | |
| CN118724975A (zh) | 有机电致发光材料及其器件 | |
| CN105503949A (zh) | 一种离子型磷光Ag6Cu配合物及其制备方法和用途 | |
| CN113735911A (zh) | 一种金属配合物、电致发光器件及其应用 | |
| HK1237786B (zh) | 一种磷光ptag2配合物及其制备方法和用途 | |
| CN108997191A (zh) | 一种有机电致发光器件及显示装置 | |
| HK1237786A1 (zh) | 一種磷光ptag2配合物及其製備方法和用途 | |
| HK1237786A (zh) | 一种磷光ptag2配合物及其制备方法和用途 | |
| CN107382908A (zh) | 一种联苯类化合物、有机电致发光器件及显示装置 | |
| CN121673331A (zh) | 有机电致发光材料及其器件 | |
| CN119060096A (zh) | 有机电致发光材料及其器件 |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| 121 | Ep: the epo has been informed by wipo that ep was designated in this application |
Ref document number: 17881622 Country of ref document: EP Kind code of ref document: A1 |
|
| ENP | Entry into the national phase |
Ref document number: 2019531368 Country of ref document: JP Kind code of ref document: A |
|
| NENP | Non-entry into the national phase |
Ref country code: DE |
|
| ENP | Entry into the national phase |
Ref document number: 20197018716 Country of ref document: KR Kind code of ref document: A |
|
| ENP | Entry into the national phase |
Ref document number: 2017881622 Country of ref document: EP Effective date: 20190618 |




