WO2018157498A1 - P型perc双面太阳能电池及其组件、系统和制备方法 - Google Patents

P型perc双面太阳能电池及其组件、系统和制备方法 Download PDF

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Publication number
WO2018157498A1
WO2018157498A1 PCT/CN2017/087361 CN2017087361W WO2018157498A1 WO 2018157498 A1 WO2018157498 A1 WO 2018157498A1 CN 2017087361 W CN2017087361 W CN 2017087361W WO 2018157498 A1 WO2018157498 A1 WO 2018157498A1
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WIPO (PCT)
Prior art keywords
laser grooving
solar cell
silicon wafer
laser
type
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Ceased
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PCT/CN2017/087361
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English (en)
French (fr)
Inventor
林纲正
方结彬
陈刚
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Zhejiang Aiko Solar Energy Technology Co Ltd
Guangdong Aiko Solar Energy Technology Co Ltd
Original Assignee
Zhejiang Aiko Solar Energy Technology Co Ltd
Guangdong Aiko Solar Energy Technology Co Ltd
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Application filed by Zhejiang Aiko Solar Energy Technology Co Ltd, Guangdong Aiko Solar Energy Technology Co Ltd filed Critical Zhejiang Aiko Solar Energy Technology Co Ltd
Priority to EP17898860.6A priority Critical patent/EP3588583A4/en
Priority to JP2019525854A priority patent/JP6741867B2/ja
Priority to US16/345,735 priority patent/US20190259887A1/en
Priority to KR1020197012482A priority patent/KR102195595B1/ko
Publication of WO2018157498A1 publication Critical patent/WO2018157498A1/zh
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/30—Coatings
    • H10F77/306—Coatings for devices having potential barriers
    • H10F77/311—Coatings for devices having potential barriers for photovoltaic cells
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F10/00—Individual photovoltaic cells, e.g. solar cells
    • H10F10/10—Individual photovoltaic cells, e.g. solar cells having potential barriers
    • H10F10/14—Photovoltaic cells having only PN homojunction potential barriers
    • H10F10/148—Double-emitter photovoltaic cells, e.g. bifacial photovoltaic cells
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H10F71/121—The active layers comprising only Group IV materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H10F71/129—Passivating
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H10F71/137—Batch treatment of the devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/12—Active materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/20—Electrodes
    • H10F77/206—Electrodes for devices having potential barriers
    • H10F77/211—Electrodes for devices having potential barriers for photovoltaic cells
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/20—Electrodes
    • H10F77/206—Electrodes for devices having potential barriers
    • H10F77/211—Electrodes for devices having potential barriers for photovoltaic cells
    • H10F77/219—Arrangements for electrodes of back-contact photovoltaic cells
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/70—Surface textures, e.g. pyramid structures
    • H10F77/707—Surface textures, e.g. pyramid structures of the substrates or of layers on substrates, e.g. textured ITO layer on a glass substrate
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/547—Monocrystalline silicon PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Definitions

  • the present invention relates to the field of solar cells, and more particularly to a P-type PERC double-sided solar cell, and a method for preparing the P-type PERC double-sided solar cell.
  • the solar cell module using the P-type PERC double-sided solar cell adopts the above-mentioned P-type Solar system for PERC double-sided solar cells.
  • a crystalline silicon solar cell is a device that effectively absorbs solar radiation energy and converts light energy into electrical energy by using a photovoltaic effect.
  • a new hole-electron pair is formed, and the electric field at the PN junction Under the action, the holes flow from the N zone to the P zone, and the electrons flow from the P zone to the N zone, and a current is formed after the circuit is turned on.
  • Conventional crystalline silicon solar cells basically use only front passivation technology, depositing a layer of silicon nitride on the front side of the silicon wafer by PECVD to reduce the recombination rate of the minority on the front surface, which can greatly increase the open circuit voltage and short circuit of the crystalline silicon battery. Current, thereby increasing the photoelectric conversion efficiency of the crystalline silicon solar cell. However, since the back side of the silicon wafer is not passivated, the improvement in photoelectric conversion efficiency is still limited.
  • the substrate adopts an N-type silicon wafer.
  • the carriers generated in the N-type silicon wafer pass through the silicon wafer having a thickness of about 200 ⁇ m, due to the N-type.
  • the silicon wafer has a low lifetime and low carrier recombination rate, and some carriers can reach the front pn junction; the front side of the solar cell is the main light-receiving surface, and its conversion efficiency accounts for a high proportion of the entire battery conversion efficiency; The effect is to greatly improve the conversion efficiency of the battery.
  • the price of N-type silicon wafer is high, and the process of N-type double-sided battery is complicated; therefore, how to develop high-efficiency and low-cost double-sided solar cells has become a hot spot for enterprises and researchers.
  • the present invention combines a PERC high-efficiency battery and a double-sided battery to develop a double-sided PERC solar cell with higher integrated photoelectric conversion efficiency.
  • the present invention aims to propose a P-type PERC double-sided solar cell with simple process, low cost, easy promotion, and high photoelectric conversion efficiency.
  • the technical problem to be solved by the present invention is to provide a P-type PERC double-sided solar cell with simple structure, low cost, easy promotion, and high photoelectric conversion efficiency.
  • the technical problem to be solved by the present invention is also to provide a preparation method of a P-type PERC double-sided solar cell, which has the advantages of simple process, low cost, easy promotion, and high photoelectric conversion efficiency.
  • the technical problem to be solved by the present invention is also to provide a P-type PERC double-sided solar cell module, which has a simple structure, low cost, easy promotion, and high photoelectric conversion efficiency.
  • the technical problem to be solved by the present invention is also to provide a P-type PERC double-sided solar energy system with simple structure, low cost, easy promotion, and high photoelectric conversion efficiency.
  • the present invention provides a P-type PERC double-sided solar cell, which in turn comprises a back silver electrode, a back aluminum gate line, a back passivation layer, a P-type silicon, an N-type emitter, a front silicon nitride film. And positive silver electrodes;
  • the laser grooving zone comprises a plurality of sets of horizontally arranged laser grooving units, each set of laser grooving units comprising one or more horizontally arranged laser grooving bodies, the back aluminum grid lines and the laser grooving body vertical.
  • the laser grooving body is linear
  • the laser grooving units are arranged in parallel;
  • each laser grooving unit the laser grooving bodies are arranged side by side, and the laser grooving bodies are on the same horizontal plane or are staggered up and down.
  • the distance between the laser grooving units is 0.5-50 mm.
  • the spacing between the laser grooving bodies is 0.5-50 mm.
  • the laser grooving body has a length of 50 to 5000 microns and a width of 10 to 500 microns.
  • the number of the back aluminum grid lines is 30-500;
  • the width of the back aluminum grid line is 30-500 microns, and the width of the back aluminum grid line is smaller than the length of the laser slotted body.
  • the back passivation layer comprises an aluminum oxide layer and a silicon nitride layer, the aluminum oxide layer is connected to the P-type silicon, and the silicon nitride layer is connected to the aluminum oxide layer;
  • the thickness of the silicon nitride layer is 20-500 nm
  • the aluminum oxide layer has a thickness of 2 to 50 nm.
  • the present invention also discloses a method for preparing a P-type PERC double-sided solar cell, comprising:
  • laser grooving the back side of the silicon wafer to form a laser grooving area comprising a plurality of sets of horizontally arranged laser grooving units, each set of laser grooving units including one or more horizontal direction settings Laser slotted body;
  • the method further includes:
  • the laser grooving body is linear
  • the laser grooving units are arranged in parallel;
  • each laser grooving unit the laser grooving bodies are arranged side by side, and the laser grooving bodies are on the same horizontal plane or are staggered up and down;
  • the spacing between the laser grooving units is 0.5-50 mm.
  • the spacing between the laser grooving bodies is 0.5-50 mm.
  • the laser grooving body has a length of 50-5000 microns and a width of 10-500 microns;
  • the number of the back aluminum grid lines is 30-500;
  • the width of the back aluminum grid line is 30-500 microns, and the width of the back aluminum grid line is smaller than the length of the laser slotted body.
  • the present invention also discloses a PERC solar cell module comprising a PERC solar cell and a packaging material, and the PERC solar cell is any of the P-type PERC double-sided solar cells described above.
  • the present invention also discloses a PERC solar energy system comprising a PERC solar cell, which is any of the P-type PERC double-sided solar cells described above.
  • the laser grooved region is formed by laser grooving on the back passivation layer, and then the aluminum paste is printed in the vertical direction along the laser scribing direction, so that the aluminum paste passes through the slotted region.
  • P-type silicon Connected to P-type silicon to obtain a back aluminum gate line.
  • the double-sided PERC solar cell can prepare a battery grid structure on the front and back sides of the silicon wafer, and adopts a method different from the conventional printing aluminum paste. Since the width of the aluminum grid is much smaller than the length of the laser grooved area, the aluminum paste and the aluminum paste can be omitted.
  • the precise alignment of the laser grooved area simplifies the laser process and printing process, reduces the difficulty of debugging the printing equipment, and is easy to industrialize and produce.
  • the laser grooved area outside the aluminum paste coverage area can increase the absorption of sunlight by the back surface of the battery and improve the photoelectric conversion efficiency of the battery. Therefore, the invention has the advantages of simple structure, simple process, low cost, easy promotion, and high photoelectric conversion efficiency.
  • Figure 1 is a cross-sectional view showing a P-type PERC double-sided solar cell of the present invention
  • FIG. 2 is a schematic view showing the back structure of a P-type PERC double-sided solar cell of the present invention
  • FIG. 3 is a schematic view showing an embodiment of a laser grooving zone of a P-type PERC double-sided solar cell according to the present invention
  • FIG. 4 is a schematic view of another embodiment of a laser grooving zone of a P-type PERC double-sided solar cell of the present invention.
  • the existing single-sided solar cell has an all-aluminum back electric field on the back surface of the battery covering the entire back surface of the silicon wafer.
  • the function of the all-aluminum back electric field is to increase the open circuit voltage Voc and the short-circuit current Jsc, forcing the minority carriers away from the surface. The minority carrier recombination rate is reduced, thereby improving battery efficiency as a whole.
  • the all-aluminum back electric field is opaque, the back side of the solar cell having an all-aluminum back electric field cannot absorb light energy, and only the front side can absorb light energy, and the integrated photoelectric conversion efficiency of the battery is difficult to be greatly improved.
  • the present invention provides a P-type PERC double-sided solar cell, which in turn includes a back silver electrode 1, a back aluminum gate line 2, a back passivation layer 3, a P-type silicon 4, and an N-type emitter. 5.
  • the positive silver electrode 7 includes a positive silver electrode main gate 7A and a positive silver electrode sub-gate 7B.
  • the back passivation layer 3 includes an aluminum oxide layer 31 and a silicon nitride layer 32.
  • the invention improves the existing single-sided PERC solar cell, no longer has an all-aluminum back electric field, but turns it into a plurality of back aluminum grid lines 2, which are opened on the back passivation layer 3 by laser grooving technology.
  • the laser grooving area 8 is printed on the parallel-arranged laser grooving area 8 so as to be in local contact with the P-type silicon 4, and the densely-arranged back aluminum grid line 2 can not only serve Increasing the open circuit voltage Voc and the short circuit current Jsc, reducing the minority carrier recombination rate, improving the photoelectric conversion efficiency of the battery, can replace the all-aluminum back electric field of the existing single-sided battery structure, and the back aluminum grid line 2 does not completely cover the silicon On the back side of the film, sunlight can be projected from the back aluminum grid line 2 into the silicon wafer, thereby realizing absorption of light energy on the back side of the silicon wafer and greatly improving the photoelectric conversion efficiency of the battery.
  • the laser grooving area 8 includes a plurality of sets of laser grooving units 81 disposed in a horizontal direction, and each set of laser grooving units 81 includes one or more laser grooving bodies 82 disposed in a horizontal direction.
  • the back aluminum grid line 2 is perpendicular to the laser slotted body 82.
  • the dashed frame shown in Figs. 3 and 4 is a laser grooving unit 81, and each group of laser grooving units 81 includes one or more laser grooving bodies 82 disposed in a horizontal direction.
  • the laser grooving unit 81 has various embodiments, including:
  • Each group of laser grooving units 81 includes a laser grooving body 82 disposed in a horizontal direction. At this time, the laser grooving unit 81 is a continuous linear grooving area, as shown in FIG. A plurality of laser grooving units 81 are arranged in the vertical direction.
  • Each group of laser grooving units 81 includes a plurality of laser grooving bodies 82 disposed in a horizontal direction. At this time, the laser grooving unit 81 is a line segment type non-continuous linear grooving area, as shown in FIG.
  • the multiple The laser grooving body 82 may be two, three, four or more, but is not limited thereto.
  • a plurality of laser grooving units 81 are arranged in the vertical direction.
  • each group of laser grooving units 81 includes a plurality of laser grooving bodies 82 disposed in the horizontal direction, it is divided into the following cases:
  • the width, length and shape of the plurality of horizontally arranged laser slotted bodies 82 are the same, and the dimensions are in the order of micrometers, and the length may be 50-5000 micrometers, but is not limited thereto; it should be noted that
  • the laser grooving bodies may be on the same horizontal plane, or may be staggered up and down (ie not in the same horizontal plane), and the staggered distribution of the topography depends on the production needs.
  • the width, length and shape of the plurality of horizontally arranged laser slotted bodies 82 are the same, and the dimensions are in the order of millimeters, and the length may be 5 to 600 millimeters, but is not limited thereto; it should be noted that
  • the laser grooving bodies may be on the same horizontal plane, or may be staggered up and down (ie not in the same horizontal plane), and the staggered distribution of the topography depends on the production needs.
  • the plurality of horizontally disposed laser slotted bodies 82 have different widths, lengths, and/or shapes, which can be combined in accordance with production needs. It should be noted that the laser grooving bodies may be on the same horizontal plane, or may be staggered up and down (ie, not in the same horizontal plane), and the staggered distribution of the topography depends on production needs.
  • the laser slotted body is linear, which facilitates processing, simplifies the process, and reduces production costs.
  • the laser grooving body may also be provided in other shapes, such as curved, curved, wavy, etc., and embodiments thereof are not limited to the embodiments of the present invention.
  • the laser grooving units are arranged in parallel.
  • the laser grooving bodies are arranged side by side, which can simplify the production process and is suitable for large-scale popularization and application.
  • the spacing between the laser grooving units is 0.5-50 mm. In each laser grooving unit, the spacing between the laser grooving bodies is 0.5-50 mm.
  • the laser slotted body 82 has a length of 50-5000 microns and a width of 10-500 microns.
  • the laser grooving body 82 has a length of 250-1200 microns and a width of 30-80 microns.
  • the length, width and spacing of the laser grooving unit and the number and width of the aluminum grid are optimized based on the comprehensive consideration of the contact area of the aluminum grid and the P-type silicon, the opaque area of the aluminum grid, and the full collection of electrons. It is to reduce the shading area of the back aluminum grid as much as possible, while ensuring a good current output, thereby improving the overall photoelectric conversion efficiency of the battery.
  • the number of the back aluminum grid lines is 30-500, and the width of the back aluminum grid lines is 30-500 microns.
  • the width of the back aluminum grid line is much smaller than the length of the laser slotted body.
  • the number of the back aluminum grid lines is 80-220, and the width of the back aluminum grid lines is 50-300 microns.
  • the width of the back aluminum grid line is much smaller than the length of the laser slotted body. In the case where the aluminum grid is perpendicular to the laser slotted body, the printing problem of the back aluminum grid line can be greatly facilitated. Without precise alignment, the aluminum grid can be placed in the laser slotted area, which simplifies the laser process and printing process, reduces the difficulty of debugging the printing equipment, and is easy to industrialize and produce.
  • the invention forms a laser grooving zone by laser grooving of the back passivation layer, and then printing the aluminum paste in the vertical direction of the laser scribing direction, so that the aluminum paste is connected to the P-type silicon through the slotted region to obtain the back aluminum grid line.
  • the PERC double-sided solar cell adopts a battery grid structure on the front and back sides of the silicon wafer, and adopts a method different from the conventional printing aluminum paste, so that precise alignment of the aluminum paste and the laser grooved area is not required, and the process is simple and easy to be industrialized. Large production.
  • the aluminum grid is parallel to the laser slotted body.
  • the aluminum paste and the laser slotted area need to be accurately aligned.
  • the precision and repeatability of the printing equipment are very high, the yield is difficult to control, and the defective products are more, resulting in an average photoelectric conversion efficiency. Decline. With the present invention, the yield can be increased to 99.5%.
  • the back passivation layer 3 includes an aluminum oxide layer 31 and a silicon nitride layer 32, the aluminum oxide layer 31 is connected to the P-type silicon 4, and the silicon nitride layer 32 is connected to the aluminum oxide layer 31;
  • the silicon nitride layer 32 has a thickness of 20-500 nm
  • the aluminum oxide layer 31 has a thickness of 2 to 50 nm.
  • the silicon nitride layer 32 has a thickness of 100-200 nm;
  • the aluminum oxide layer 31 has a thickness of 5 to 30 nm.
  • the present invention also discloses a method for preparing a P-type PERC double-sided solar cell, comprising:
  • the laser grooving area comprising a plurality of sets of horizontally arranged laser grooving units, each set of laser grooving units comprising one or more horizontally arranged Laser slotted body;
  • S106 and S104, S105 can be interchanged, and S106 can be before S104 and S105.
  • the method further comprises: polishing the back surface of the silicon wafer.
  • the present invention may be provided with a backside polishing step or no backside polishing step.
  • the present invention also discloses a PERC solar cell module comprising a PERC solar cell and a packaging material, and the PERC solar cell is any of the P-type PERC double-sided solar cells described above.
  • the PERC solar cell module the high-permeability tempered glass, the ethylene-vinyl acetate copolymer EVA, the PERC solar cell, the ethylene-vinyl acetate copolymer EVA, and the highly permeable tempered glass are sequentially connected from top to bottom. composition.
  • the present invention also discloses a PERC solar energy system comprising a PERC solar cell, which is any of the P-type PERC double-sided solar cells described above.
  • a PERC solar cell As a preferred embodiment of the PERC solar system, a PERC solar cell, a battery pack, a charge and discharge controller inverter, an AC power distribution cabinet, and a solar tracking control system are included.
  • the PERC solar system may be provided with a battery pack, a charge and discharge controller inverter, or a battery pack or a charge and discharge controller inverter, and those skilled in the art may set according to actual needs.
  • laser grooving the back side of the silicon wafer to form a laser grooving area comprising a plurality of sets of horizontally arranged laser grooving units, each set of laser grooving units including one or more horizontal direction settings Laser slotted body having a length of 1000 microns and a width of 40 microns;
  • the silicon wafer is sintered at a high temperature to form a back silver electrode and a positive silver electrode.
  • laser grooving the back side of the silicon wafer to form a laser grooving area comprising a plurality of sets of horizontally arranged laser grooving units, each set of laser grooving units including one or more horizontal direction settings Laser slotted body, the laser slotted body having a length of 500 microns and a width of 50 microns;
  • the silicon wafer is sintered at a high temperature to form a back silver electrode and a positive silver electrode.
  • laser grooving the back side of the silicon wafer to form a laser grooving area comprising a plurality of sets of horizontally arranged laser grooving units, each set of laser grooving units including one or more horizontal direction settings Laser slotted body having a length of 300 microns and a width of 30 microns;
  • the silicon wafer is sintered at a high temperature to form a back silver electrode and a positive silver electrode.
  • laser grooving the back side of the silicon wafer to form a laser grooving area comprising a plurality of sets of horizontally arranged laser grooving units, each set of laser grooving units including one or more horizontal direction settings Laser slotted body, the laser slotted body having a length of 1200 microns and a width of 200 microns;
  • the silicon wafer is sintered at a high temperature to form a back silver electrode and a positive silver electrode.

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  • Life Sciences & Earth Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Sustainable Energy (AREA)
  • Sustainable Development (AREA)

Abstract

一种P型PERC双面太阳能电池，依次包括背银电极（1）、背铝栅线（2）、背面钝化层（3）、P型硅（4）、N型发射极（5）、正面氮化硅膜（6）和正银电极（7），对背面钝化层通过激光开槽形成激光开槽区（8），背铝栅线通过激光开槽区与P型硅相连，激光开槽区包括多组水平方向设置的激光开槽单元（81），每一组激光开槽单元包括一个或多个水平方向设置的激光开槽体（82），背铝栅线与激光开槽体垂直。还提供了该P型PERC双面太阳能电池的制备方法以及包含该P型PERC双面太阳能电池的太阳能电池组件和太阳能系统。采用该太阳能电池，结构简单、成本较低、易于推广、光电转换效率高。

Description

P型PERC双面太阳能电池及其组件、系统和制备方法 技术领域
本发明涉及太阳能电池领域，尤其涉及一种P型PERC双面太阳能电池、以及上述P型PERC双面太阳能电池的制备方法，采用上述P型PERC双面太阳能电池的太阳能电池组件，采用上述P型PERC双面太阳能电池的太阳能系统。
背景技术
晶硅太阳能电池是一种有效吸收太阳辐射能，利用光生伏打效应把光能转换成电能的器件，当太阳光照在半导体P-N结上，形成新的空穴-电子对，在P-N结电场的作用下，空穴由N区流向P区，电子由P区流向N区，接通电路后就形成电流。
传统晶硅太阳能电池基本上只采用正面钝化技术，在硅片正面用PECVD的方式沉积一层氮化硅，降低少子在前表面的复合速率，可以大幅度提升晶硅电池的开路电压和短路电流，从而提升晶硅太阳电池的光电转换效率。但是由于硅片的背面没有钝化，光电转换效率的提升仍然受到限制。
现有技术的双面太阳能电池结构：基底采用N型硅片，当太阳光子照射电池背面时，在N型硅片中产生的载流子穿过厚度约为200微米的硅片，由于N型硅片少子寿命高，载流子复合速率低，部分载流子可以到达正面的p-n结；太阳能电池的正面为主要受光面，其转换效率占整个电池转换效率的比例很高；正背面的综合作用，从而大大提高电池的转换效率。但是，N型硅片价格高，N型双面电池工艺复杂；因此，如何开发高效低成本的双面太阳能电池成为企业和研究者关注的热点。
另一方面，随着对晶硅电池的光电转换效率的要求越来越高，业界一直在研究PERC背钝化太阳电池技术。业界主流厂家主要在开发单面PERC太阳能电池，本发明将PERC高效电池和双面电池结合起来，旨在开发综合光电转换效率更高的双面PERC太阳能电池。
对于双面PERC太阳能电池，由于光电转换效率高，同时双面吸收太阳光，发电量更高，在实际应用中具有更大的使用价值。因此，本发明旨在提出一种工艺简单、成本较低、易于推广、光电转换效率高的P型PERC双面太阳能电池。
发明内容
本发明所要解决的技术问题在于，提供一种P型PERC双面太阳能电池，结构简单，成本较低、易于推广、光电转换效率高。
本发明所要解决的技术问题还在于，提供一种P型PERC双面太阳能电池的制备方法，工艺简单，成本较低、易于推广、光电转换效率高。
本发明所要解决的技术问题还在于，提供一种P型PERC双面太阳能电池组件，结构简单，成本较低、易于推广、光电转换效率高。
本发明所要解决的技术问题还在于，提供一种P型PERC双面太阳能系统，结构简单，成本较低、易于推广、光电转换效率高。
为了解决上述技术问题，本发明提供了一种P型PERC双面太阳能电池，依次包括背银电极、背铝栅线、背面钝化层、P型硅、N型发射极、正面氮化硅膜和正银电极；
对背面钝化层通过激光开槽形成激光开槽区，所述背铝栅线通过激光开槽区与P型硅相连；
所述激光开槽区包括多组水平方向设置的激光开槽单元，每一组激光开槽单元包括一个或多个水平方向设置的激光开槽体，所述背铝栅线与激光开槽体垂直。
作为上述方案的优选方式，所述激光开槽体为直线型；
所述激光开槽单元之间为平行设置；
每一激光开槽单元中，所述激光开槽体为并列设置，所述激光开槽体处于同一水平面上或上下错开。
作为上述方案的优选方式，所述激光开槽单元之间的间距为0.5-50mm。
每一激光开槽单元中，所述激光开槽体之间的间距为0.5-50mm。
所述激光开槽体的长度为50-5000微米，宽度为10-500微米。
作为上述方案的优选方式，所述背铝栅线的根数为30-500条；
所述背铝栅线的宽度为30-500微米，所述背铝栅线的宽度小于所述激光开槽体的长度。
作为上述方案的优选方式，所述背面钝化层包括氧化铝层和氮化硅层，所述氧化铝层与P型硅连接，所述氮化硅层与氧化铝层连接；
所述氮化硅层的厚度为20-500nm；
所述氧化铝层的厚度为2-50nm。
相应的，本发明还公开一种P型PERC双面太阳能电池的制备方法，包括：
(1)在硅片正面和背面形成绒面，所述硅片为P型硅；
(2)对硅片进行扩散，形成N型发射极；
(3)去除扩散过程形成的正面磷硅玻璃和周边PN结；
(4)在硅片背面沉积三氧化二铝膜；
(5)在硅片背面沉积氮化硅膜；
(6)在硅片正面沉积氮化硅膜；
(7)对硅片背面激光开槽，形成激光开槽区，所述激光开槽区包括多组水平方向设置的激光开槽单元，每一组激光开槽单元包括一个或多个水平方向设置的激光开槽体；
(8)在所述硅片背面印刷背银主栅电极；
(9)在所述硅片背面，沿着激光开槽的垂直方向印刷铝浆，得到背铝栅线，所述背铝栅线与激光开槽体垂直；
(10)在所述硅片正面印刷正电极浆料；
(11)对硅片进行高温烧结，形成背银电极和正银电极；
(12)对硅片进行抗LID退火。
作为上述方案的优选方式，步骤(3)和(4)之间，还包括：
对硅片背面进行抛光。
作为上述方案的优选方式，所述激光开槽体为直线型；
所述激光开槽单元之间为平行设置；
每一激光开槽单元中，所述激光开槽体为并列设置，所述激光开槽体处于同一水平面上或上下错开；
所述激光开槽单元之间的间距为0.5-50mm。
每一激光开槽单元中，所述激光开槽体之间的间距为0.5-50mm。
所述激光开槽体的长度为50-5000微米，宽度为10-500微米；
所述背铝栅线的根数为30-500条；
所述背铝栅线的宽度为30-500微米，所述背铝栅线的宽度小于所述激光开槽体的长度。
相应的，本发明还公开一种PERC太阳能电池组件，包括PERC太阳能电池和封装材料，所述PERC太阳能电池是上述任一的P型PERC双面太阳能电池。
相应的，本发明还公开一种PERC太阳能系统，包括PERC太阳能电池，所述PERC太阳能电池是上述任一的P型PERC双面太阳能电池。
实施本发明，具有如下有益效果：
本发明通过在硅片背面形成背面钝化层后，对背面钝化层通过激光开槽形成激光开槽区，然后沿着激光划线方向的垂直方向印刷铝浆，使铝浆通过开槽区与P型硅相连，得到背铝栅线。该双面PERC太阳能电池通过在硅片正面和背面制备电池栅线结构，采用不同于常规印刷铝浆的方式，由于铝栅的宽度远小于激光开槽区的长度，可以不需要对铝浆和激光开槽区实施精确对准，简化了激光工艺和印刷工艺，降低了印刷设备调试的难度，易于产业化大生产。另外，铝浆覆盖区以外的激光开槽区可以增加电池背表面对太阳光的吸收，提高电池的光电转换效率。因此，本发明结构简单、工艺简单，成本较低、易于推广、光电转换效率高。
附图说明
图1是本发明一种P型PERC双面太阳能电池的剖视图；
图2是本发明一种P型PERC双面太阳能电池的背面结构的示意图；
图3是本发明一种P型PERC双面太阳能电池的激光开槽区一实施例的示意图；
图4是本发明一种P型PERC双面太阳能电池的激光开槽区另一实施例的示意图。
具体实施方式
为使本发明的目的、技术方案和优点更加清楚，下面将结合附图对本发明 作进一步地详细描述。
现有的单面太阳能电池在电池的背面设有全铝背电场覆盖在硅片的整个背面，全铝背电场的作用是提高了开路电压Voc和短路电流Jsc，迫使少数载流子远离表面，少数载流子复合率降低，从而整体上提高电池效率。然而，由于全铝背电场不透光，因此，具有全铝背电场的太阳能电池背面无法吸收光能，只能正面吸收光能，电池的综合光电转换效率难以大幅度的提高。
针对上述技术问题，结合图1，本发明提供一种P型PERC双面太阳能电池，依次包括背银电极1、背铝栅线2、背面钝化层3、P型硅4、N型发射极5、正面氮化硅膜6、正银电极7；对背面钝化层3通过激光开槽形成激光开槽区8，所述背铝栅线2通过激光开槽区8与P型硅4相连。正银电极7包括正银电极主栅7A和正银电极副栅7B。所述背面钝化层3包括氧化铝层31和氮化硅层32。
本发明对现有的单面PERC太阳能电池进行改进，不再设有全铝背电场，而是将其变成许多的背铝栅线2，采用激光开槽技术在背面钝化层3上开设激光开槽区8，而背铝栅线2印刷在这些平行设置的激光开槽区8上，从而能与P型硅4形成局部接触，密集平行排布的背铝栅线2不仅能起到提高开路电压Voc和短路电流Jsc，降低少数载流子复合率，提高电池光电转换效率的作用，可替代现有单面电池结构的全铝背电场，而且背铝栅线2并未全面遮盖硅片的背面，太阳光可从背铝栅线2之间投射至硅片内，从而实现硅片背面吸收光能，大幅提高电池的光电转换效率。
如图2所示，所述激光开槽区8包括多组水平方向设置的激光开槽单元81，每一组激光开槽单元81包括一个或多个水平方向设置的激光开槽体82，所述背铝栅线2与激光开槽体82垂直。结合图3、4，图3、4所示的虚线框为激光开槽单元81，每一组激光开槽单元81包括一个或多个水平方向设置的激光开槽体82。
需要说明的是，激光开槽单元81有多种实施方式，包括：
(1)每一组激光开槽单元81包括一个水平方向设置的激光开槽体82，此时，激光开槽单元81为连续的直线开槽区，具体如图4所示。多个激光开槽单元81沿着竖直方向排列布置。
(2)每一组激光开槽单元81包括多个水平方向设置的激光开槽体82，此时，激光开槽单元81为线段式非连续的直线开槽区，具体如图3所示。该多个 激光开槽体82可以是两个、三个、四个或以上，但不限于此。多个激光开槽单元81沿着竖直方向排列布置。
当每一组激光开槽单元81包括多个水平方向设置的激光开槽体82时，其分为以下几种情况：
A、多个水平方向设置的激光开槽体82的宽度、长度和形状都是一样的，其尺寸单位为微米级别，长度可以为50-5000微米，但不限于此；需要说明的是，所述激光开槽体可以处于同一水平面上，也可以上下错开(即不在同一水平面)上，其错开分布的形貌根据生产需要而定。
B、多个水平方向设置的激光开槽体82的宽度、长度和形状都是一样的，其尺寸单位为毫米级别，长度可以为5-600毫米，但不限于此；需要说明的是，所述激光开槽体可以处于同一水平面上，也可以上下错开(即不在同一水平面)上，其错开分布的形貌根据生产需要而定。
C、多个水平方向设置的激光开槽体82的宽度、长度和/或形状不一样的，其可以根据生产需要进行组合设计。需要说明的是，所述激光开槽体可以处于同一水平面上，也可以上下错开(即不在同一水平面)上，其错开分布的形貌根据生产需要而定。
作为本发明优选的实施方式，所述激光开槽体为直线型，方便加工，简化工艺，降低生产成本。所述激光开槽体也可以设置为其他形状，例如曲线形、弧形、波浪形等，其实施方式并不局限于本发明所举实施例。
所述激光开槽单元之间为平行设置，每一激光开槽单元中，所述激光开槽体为并列设置，可以简化生产工艺，适合大规模推广应用。
所述激光开槽单元之间的间距为0.5-50mm。每一激光开槽单元中，所述激光开槽体之间的间距为0.5-50mm。
所述激光开槽体82的长度为50-5000微米，宽度为10-500微米。优选的，所述激光开槽体82的长度为250-1200微米，宽度为30-80微米。
激光开槽单元的长度、宽度和间距和铝栅的根数和宽度是在综合考虑铝栅与P型硅的接触面积、铝栅的遮光面积和充分搜集电子的的基础上优化而来，目的是尽可能降低背面铝栅的遮光面积，同时保证好的电流输出，进而提升电池的整体光电转换效率。
所述背铝栅线的根数为30-500条，所述背铝栅线的宽度为30-500微米，所 述背铝栅线的宽度远小于所述激光开槽体的长度。优选的，所述背铝栅线的根数为80-220条，所述背铝栅线的宽度为50-300微米。
所述背铝栅线的宽度远小于所述激光开槽体的长度，在铝栅与激光开槽体垂直的情况下，可以极大的方便背铝栅线的印刷问题。不需要精确对准，铝栅都可以落在激光开槽区内，简化了激光工艺和印刷工艺，降低了印刷设备调试的难度，易于产业化大生产。
本发明通过对背面钝化层通过激光开槽形成激光开槽区，然后沿着激光划线方向的垂直方向印刷铝浆，使铝浆通过开槽区与P型硅相连，得到背铝栅线。该PERC双面太阳能电池通过在硅片正面和背面制备电池栅线结构，采用不同于常规印刷铝浆的方式，可以不需要对铝浆和激光开槽区实施精确对准，工艺简单，易于产业化大生产。铝栅与激光开槽体平行，铝浆和激光开槽区需要实施精确对准，对印刷设备的精度和重复性要求很高，成品率难以得到控制，次品较多，造成平均光电转换效率的下降。采用本发明，可以将成品率提高至99.5％。
进一步，所述背面钝化层3包括氧化铝层31和氮化硅层32，所述氧化铝层31与P型硅4连接，所述氮化硅层32与氧化铝层31连接；
所述氮化硅层32的厚度为20-500nm；
所述氧化铝层31的厚度为2-50nm。
优选的，所述氮化硅层32的厚度为100-200nm；
所述氧化铝层31的厚度为5-30nm。
相应的，本发明还公开一种P型PERC双面太阳能电池的制备方法，包括：
S101、在硅片正面和背面形成绒面，所述硅片为P型硅；
S102、对硅片进行扩散，形成N型发射极；
S103、去除扩散过程形成的正面磷硅玻璃和周边PN结；
S104、在硅片背面沉积三氧化二铝膜；
S105、在硅片背面沉积氮化硅膜；
S106、在硅片正面沉积氮化硅膜；
S107、对硅片背面激光开槽，形成激光开槽区，所述激光开槽区包括多组水平方向设置的激光开槽单元，每一组激光开槽单元包括一个或多个水平方向设置的激光开槽体；
S108、在所述硅片背面印刷背银主栅电极；
S109、在所述硅片背面，沿着激光开槽的垂直方向印刷铝浆，得到背铝栅线，所述背铝栅线与激光开槽体垂直；
S110、在所述硅片正面印刷正电极浆料；
S111、对硅片进行高温烧结，形成背银电极和正银电极。
S112、对硅片进行抗LID退火。
需要说明的是，S106与S104、S105的顺序可以互换，S106可以在S104、S105之前。
S103和S104之间，还包括：对硅片背面进行抛光。本发明可以设有背面抛光步骤，也可以不设有背面抛光步骤。
还需要说明的是，制备方法中的激光开槽区和背铝栅线的具体参数设定，同上所述，在此不再赘述。
相应的，本发明还公开一种PERC太阳能电池组件，包括PERC太阳能电池和封装材料，所述PERC太阳能电池是上述任一的P型PERC双面太阳能电池。具体的，作为PERC太阳能电池组件的一实施例，其由上至下依次连接的高透钢化玻璃、乙烯-醋酸乙烯共聚物EVA、PERC太阳能电池、乙烯-醋酸乙烯共聚物EVA和高透钢化玻璃组成。
相应的，本发明还公开一种PERC太阳能系统，包括PERC太阳能电池，所述PERC太阳能电池是上述任一的P型PERC双面太阳能电池。作为PERC太阳能系统的一优选实施例，包括PERC太阳能电池、蓄电池组，充放电控制器逆变器，交流配电柜和太阳跟踪控制系统。其中，PERC太阳能系统可以设有蓄电池组、充放电控制器逆变器，也可以不设蓄电池组、充放电控制器逆变器，本领域技术人员可以根据实际需要进行设置。
需要说明的是，PERC太阳能电池组件、PERC太阳能系统中，除了P型PERC双面太阳能电池之外的部件，参照现有技术设计即可。
下面以具体实施例进一步阐述本发明
实施例1
(1)在硅片正面和背面形成绒面，所述硅片为P型硅；
(2)对硅片进行扩散，形成N型发射极；
(3)去除扩散过程形成的正面磷硅玻璃和周边PN结；
(4)在硅片背面沉积三氧化二铝膜；
(5)在硅片背面沉积氮化硅膜；
(6)在硅片正面沉积氮化硅膜；
(7)对硅片背面激光开槽，形成激光开槽区，所述激光开槽区包括多组水平方向设置的激光开槽单元，每一组激光开槽单元包括一个或多个水平方向设置的激光开槽体，所述激光开槽体的长度为1000微米，宽度为40微米；
(8)在所述硅片背面印刷背银主栅电极；
(9)在所述硅片背面，沿着激光开槽的垂直方向印刷铝浆，得到背铝栅线，所述背铝栅线与激光开槽体垂直，背铝栅线的根数为150条，所述背铝栅线的宽度为150微米；
(10)在所述硅片正面印刷正电极浆料；
(11)对硅片进行高温烧结，形成背银电极和正银电极。
(12)对硅片进行抗LID退火。
实施例2
(1)在硅片正面和背面形成绒面，所述硅片为P型硅；
(2)对硅片进行扩散，形成N型发射极；
(3)去除扩散过程形成的正面磷硅玻璃和周边PN结，并对硅片背面进行抛光；
(4)在硅片背面沉积三氧化二铝膜；
(5)在硅片背面沉积氮化硅膜；
(6)在硅片正面沉积氮化硅膜；
(7)对硅片背面激光开槽，形成激光开槽区，所述激光开槽区包括多组水平方向设置的激光开槽单元，每一组激光开槽单元包括一个或多个水平方向设置的激光开槽体，所述激光开槽体的长度为500微米，宽度为50微米；
(8)在所述硅片背面印刷背银主栅电极；
(9)在所述硅片背面，沿着激光开槽的垂直方向印刷铝浆，得到背铝栅线，所述背铝栅线与激光开槽体垂直，背铝栅线的根数为200条，所述背铝栅线的宽度为200微米；
(10)在所述硅片正面印刷正电极浆料；
(11)对硅片进行高温烧结，形成背银电极和正银电极。
(12)对硅片进行抗LID退火。
实施例3
(1)在硅片正面和背面形成绒面，所述硅片为P型硅；
(2)对硅片进行扩散，形成N型发射极；
(3)去除扩散过程形成的正面磷硅玻璃和周边PN结；
(4)在硅片背面沉积三氧化二铝膜；
(5)在硅片背面沉积氮化硅膜；
(6)在硅片正面沉积氮化硅膜；
(7)对硅片背面激光开槽，形成激光开槽区，所述激光开槽区包括多组水平方向设置的激光开槽单元，每一组激光开槽单元包括一个或多个水平方向设置的激光开槽体，所述激光开槽体的长度为300微米，宽度为30微米；
(8)在所述硅片背面印刷背银主栅电极；
(9)在所述硅片背面，沿着激光开槽的垂直方向印刷铝浆，得到背铝栅线，所述背铝栅线与激光开槽体垂直，背铝栅线的根数为250条，所述背铝栅线的宽度为250微米；
(10)在所述硅片正面印刷正电极浆料；
(11)对硅片进行高温烧结，形成背银电极和正银电极。
(12)对硅片进行抗LID退火。
实施例4
(1)在硅片正面和背面形成绒面，所述硅片为P型硅；
(2)对硅片进行扩散，形成N型发射极；
(3)去除扩散过程形成的正面磷硅玻璃和周边PN结，并对硅片背面进行抛光；
(4)在硅片背面沉积三氧化二铝膜；
(5)在硅片背面沉积氮化硅膜；
(6)在硅片正面沉积氮化硅膜；
(7)对硅片背面激光开槽，形成激光开槽区，所述激光开槽区包括多组水平方向设置的激光开槽单元，每一组激光开槽单元包括一个或多个水平方向设置的激光开槽体，所述激光开槽体的长度为1200微米，宽度为200微米；
(8)在所述硅片背面印刷背银主栅电极；
(9)在所述硅片背面，沿着激光开槽的垂直方向印刷铝浆，得到背铝栅线，所述背铝栅线与激光开槽体垂直，背铝栅线的根数为300条，所述背铝栅线的宽度为300微米；
(10)在所述硅片正面印刷正电极浆料；
(11)对硅片进行高温烧结，形成背银电极和正银电极。
(12)对硅片进行抗LID退火。
最后所应当说明的是，以上实施例仅用以说明本发明的技术方案而非对本发明保护范围的限制，尽管参照较佳实施例对本发明作了详细说明，本领域的普通技术人员应当理解，可以对本发明的技术方案进行修改或者等同替换，而不脱离本发明技术方案的实质和范围。

Claims (10)

  1. 一种P型PERC双面太阳能电池，其特征在于，依次包括背银电极、背铝栅线、背面钝化层、P型硅、N型发射极、正面氮化硅膜和正银电极；
    对背面钝化层通过激光开槽形成激光开槽区，所述背铝栅线通过激光开槽区与P型硅相连；
    所述激光开槽区包括多组水平方向设置的激光开槽单元，每一组激光开槽单元包括一个或多个水平方向设置的激光开槽体，所述背铝栅线与激光开槽体垂直。
  2. 如权利要求1所述P型PERC双面太阳能电池，其特征在于，所述激光开槽单元之间为平行设置；
    每一激光开槽单元中，所述激光开槽体为并列设置，所述激光开槽体处于同一水平面上或上下错开。
  3. 如权利要求1所述P型PERC双面太阳能电池，其特征在于，所述激光开槽单元之间的间距为0.5-50mm；
    每一激光开槽单元中，所述激光开槽体之间的间距为0.5-50mm；
    所述激光开槽体的长度为50-5000微米，宽度为10-500微米。
  4. 如权利要求1所述P型PERC双面太阳能电池，其特征在于，所述背铝栅线的根数为30-500条；
    所述背铝栅线的宽度为30-500微米，所述背铝栅线的宽度小于所述激光开槽体的长度。
  5. 如权利要求1所述P型PERC双面太阳能电池，其特征在于，所述背面钝化层包括氧化铝层和氮化硅层，所述氧化铝层与P型硅连接，所述氮化硅层与氧化铝层连接；
    所述氮化硅层的厚度为20-500nm；
    所述氧化铝层的厚度为2-50nm。
  6. 一种如权利要求1-5任一项所述的P型PERC双面太阳能电池的制备方法，其特征在于，包括：
    (1)在硅片正面和背面形成绒面，所述硅片为P型硅；
    (2)对硅片进行扩散，形成N型发射极；
    (3)去除扩散过程形成的正面磷硅玻璃和周边PN结；
    (4)在硅片背面沉积三氧化二铝膜；
    (5)在硅片背面沉积氮化硅膜；
    (6)在硅片正面沉积氮化硅膜；
    (7)对硅片背面激光开槽，形成激光开槽区，所述激光开槽区包括多组水平方向设置的激光开槽单元，每一组激光开槽单元包括一个或多个水平方向设置的激光开槽体；
    (8)在所述硅片背面印刷背银主栅电极；
    (9)在所述硅片背面，沿着激光开槽的垂直方向印刷铝浆，得到背铝栅线，所述背铝栅线与激光开槽体垂直；
    (10)在所述硅片正面印刷正电极浆料；
    (11)对硅片进行高温烧结，形成背银电极和正银电极；
    (12)对硅片进行抗LID退火。
  7. 如权利要求6所述P型PERC双面太阳能电池的制备方法，其特征在于，步骤(3)和(4)之间，还包括：
    对硅片背面进行抛光。
  8. 如权利要求7所述P型PERC双面太阳能电池的制备方法，其特征在于，所述激光开槽体为直线型；
    所述激光开槽单元之间为平行设置；
    每一激光开槽单元中，所述激光开槽体为并列设置，所述激光开槽体处于同一水平面上或上下错开；
    所述激光开槽单元之间的间距为0.5-50mm；
    每一激光开槽单元中，所述激光开槽体之间的间距为0.5-50mm；
    所述激光开槽体的长度为50-5000微米，宽度为10-500微米；
    所述背铝栅线的根数为30-500条；
    所述背铝栅线的宽度为30-500微米，所述背铝栅线的宽度小于所述激光开槽体的长度。
  9. 一种PERC太阳能电池组件，其特征在于，包括PERC太阳能电池和封装材料，其特征在于，所述PERC太阳能电池是权利要求1-5任一项所述的P型PERC双面太阳能电池。
  10. 一种PERC太阳能系统，包括PERC太阳能电池，其特征在于，所述PERC太阳能电池是权利要求1-5任一项所述的P型PERC双面太阳能电池。
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