WO2018209933A1 - 彩膜基板及其制作方法、显示面板和显示装置 - Google Patents

彩膜基板及其制作方法、显示面板和显示装置 Download PDF

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WO2018209933A1
WO2018209933A1 PCT/CN2017/115655 CN2017115655W WO2018209933A1 WO 2018209933 A1 WO2018209933 A1 WO 2018209933A1 CN 2017115655 W CN2017115655 W CN 2017115655W WO 2018209933 A1 WO2018209933 A1 WO 2018209933A1
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sub
color filter
pixels
color
filter substrate
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English (en)
French (fr)
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王辉锋
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BOE Technology Group Co Ltd
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BOE Technology Group Co Ltd
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Priority to EP17897214.7A priority Critical patent/EP3627578B1/en
Priority to US16/079,697 priority patent/US10665641B2/en
Priority to JP2018545202A priority patent/JP7294808B2/ja
Publication of WO2018209933A1 publication Critical patent/WO2018209933A1/zh
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/30—Devices specially adapted for multicolour light emission
    • H10K59/38—Devices specially adapted for multicolour light emission comprising colour filters or colour changing media [CCM]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/85—Arrangements for extracting light from the devices
    • H10K50/856—Arrangements for extracting light from the devices comprising reflective means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/86—Arrangements for improving contrast, e.g. preventing reflection of ambient light
    • H10K50/865—Arrangements for improving contrast, e.g. preventing reflection of ambient light comprising light absorbing layers, e.g. light-blocking layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/80—Constructional details
    • H10K59/87—Passivation; Containers; Encapsulations
    • H10K59/871—Self-supporting sealing arrangements
    • H10K59/8723—Vertical spacers, e.g. arranged between the sealing arrangement and the OLED
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/80—Constructional details
    • H10K59/8791—Arrangements for improving contrast, e.g. preventing reflection of ambient light
    • H10K59/8792—Arrangements for improving contrast, e.g. preventing reflection of ambient light comprising light absorbing layers, e.g. black layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K2102/00—Constructional details relating to the organic devices covered by this subclass
    • H10K2102/301—Details of OLEDs
    • H10K2102/302—Details of OLEDs of OLED structures
    • H10K2102/3023—Direction of light emission
    • H10K2102/3026—Top emission
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/1201—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/80—Constructional details
    • H10K59/875—Arrangements for extracting light from the devices
    • H10K59/878—Arrangements for extracting light from the devices comprising reflective means

Definitions

  • At least one embodiment of the present disclosure is directed to a color film substrate, a method of fabricating the same, a display panel, and a display device.
  • organic light-emitting diode (OLED) devices Compared with liquid crystal displays (LCDs), organic light-emitting diode (OLED) devices have the advantages of self-luminescence, fast response, wide viewing angle, high brightness, colorful color, and thinness. technology.
  • At least one embodiment of the present disclosure is directed to a color filter substrate, a method of fabricating the same, and a display panel to suppress the influence of light leakage light on the color of adjacent sub-pixels.
  • At least one embodiment of the present disclosure provides a color filter substrate including a plurality of sub-pixels, each sub-pixel including a color filter layer, the color filter layer configured to display a color of light transmitted through the sub-pixel, Wherein, at least two adjacent sub-pixels of different colors are disposed with a retaining wall, and the retaining wall continuously extends between the sub-pixels separated by the same.
  • At least one embodiment of the present disclosure further provides a method of fabricating a color filter substrate, comprising forming a plurality of sub-pixels, each sub-pixel comprising a color filter layer, the color filter layer being configured to transmit light through the sub-pixel A color is displayed in which a barrier wall is formed between at least two adjacent sub-pixels of different colors, the barrier wall continuously extending between sub-pixels separated by the same.
  • At least one embodiment of the present disclosure also provides a display panel including any of the color film substrates provided by at least one embodiment of the present disclosure.
  • At least one embodiment of the present disclosure also provides a display device including at least one implementation of the present disclosure Any of the display panels provided in the example.
  • FIG. 1 is a schematic cross-sectional view of a top-emitting OLED display panel
  • FIG. 2 is a top plan view of an array substrate of a top-emitting OLED display panel
  • FIG. 3 is a schematic plan view of a color filter substrate corresponding to the array substrate of FIG. 2;
  • FIG. 4 is a top plan view of another array substrate of a top emitting OLED display panel
  • FIG. 5 is a schematic plan view of a color filter substrate corresponding to the array substrate of FIG. 4;
  • FIG. 6 is a schematic top plan view of a color filter substrate according to an embodiment of the present disclosure.
  • FIG. 7 is a cross-sectional view of a display panel including the color filter substrate shown in FIG. 6 according to an embodiment of the present disclosure (a cross-sectional view of the color filter substrate AB shown in FIG. 6);
  • FIG. 8 is a cross-sectional view of a display panel including the color filter substrate shown in FIG. 6 according to an embodiment of the present disclosure (a cross-sectional view of the color filter substrate shown in FIG. 6);
  • FIG. 9 is a cross-sectional view of a color filter substrate according to an embodiment of the present disclosure.
  • FIG. 10 is a schematic diagram of a display panel formed by a color filter substrate including a reflective layer according to an embodiment of the present disclosure
  • FIG. 11 is a schematic perspective view of a color filter substrate according to an embodiment of the present disclosure.
  • FIG. 12 is a cross-sectional view of a display panel according to an embodiment of the present disclosure.
  • the OLED device usually consists of an anode, a light-emitting functional layer 213 and a cathode. According to different light-emitting surfaces, it can be divided into two types: bottom emission and top emission. Since the top emission device can obtain a larger aperture ratio, it has become a research hotspot in recent years.
  • the top emitting OLED device requires uniform thickness of each layer of the light emitting functional layer (EL).
  • EL light emitting functional layer
  • OLED Organic LED
  • Color filter (OLED+CF) technology after the corresponding color filter (CF) layer, the OLED device can filter out the corresponding impure and retain a specific spectrum, thereby improving the purity of the monochromatic color of the OLED device, thereby improving OLED device color gamut.
  • a black matrix 102 and a color filter layer 103 may be disposed on the first substrate 101 of the color filter substrate 10.
  • Each of the sub-pixels 0103 includes a color filter layer 103, and the color filter layer 103 is disposed.
  • the color filter layer 103 may include a red filter layer 1031, a green filter layer 1032, and a blue filter layer 1033.
  • the sub-pixel 0103 may include a red sub-pixel, a green sub-pixel, and a blue sub-pixel according to a color displayed after the light is transmitted through the sub-pixel.
  • the array substrate 20 includes a light emitting unit 2002, and the light emitting unit 2002 may include a first electrode 210, and the first electrode 210 may be disposed on the second substrate substrate 201.
  • the first electrode 210 may be a transparent conductive oxide such as Indium Tin Oxide (ITO), but is not limited thereto.
  • ITO Indium Tin Oxide
  • the top-emitting OLED device has a gap between the array substrate 20 and the color filter substrate 10, so that each sub-pixel (for example, red, green, and blue) emits light when light is emitted between 0103 and is mutually colored.
  • each sub-pixel for example, red, green, and blue
  • a sub-pixel having one pixel including red, green, and blue primary colors is taken as an example, but is not limited thereto. Subpixels can also take other colors.
  • ⁇ 1 is the incident angle
  • ⁇ 2 is the exit angle
  • the refractive index of air is 1.0
  • the refractive index of the glass is 1.5 (take the first base substrate 101 as a glass substrate as an example), so that when ⁇ 1 is equal to 41°, ⁇ 2 is equal to 90°. That is to say, the incident angle ⁇ 1>41° can not be emitted, and no light leakage occurs.
  • the incident angle ⁇ 1 is less than 41°, and the light can be emitted and light leakage occurs.
  • a Pixel Definition Layer may be disposed on the first electrode 210.
  • the pixel defining layer may include a first sub-pixel defining layer (first sub-PDL) 211 and a second sub-pixel defining layer (second sub-PDL) 212 double-layer structure
  • the first sub-PDL 211 can be used to define the actual light-emitting area of the light-emitting unit 2002, and the first sub-PDL 211 can use a high surface energy material such as SiO 2 , Si 3 N 4 , or the like.
  • the second sub-PDL 212 can be used for the inkjet printing device ink, and the second sub-PDL 212 can use a material having a high lyophobic property on the surface to prevent the ink from overflowing outside the sub-pixel.
  • the second sub-PDL 212 may be a material such as a fluorine-containing acrylic resin, a fluorinated polyimide resin or the like.
  • the second sub-PDL 212 may be made of a material such as polyimide, acryl resin, SiO 2 or ceramic.
  • the array substrate includes a Thin Film Transistor (TFT) 2001, an OLED sub-pixel region, a first sub-PDL 211, and a second sub-PDL 212 structure.
  • TFT Thin Film Transistor
  • 2T1C, 3T2C, 3T1C and other structures can be set according to the internal compensation circuit.
  • the TFT 2001 may be disposed in the longitudinal direction of the sub-pixel, and FIG. 2 shows that three TFTs 2001 are disposed along the longitudinal direction of each sub-pixel.
  • the OLED sub-pixel region can be used to define the shape, location, and size of the sub-pixels.
  • the light emitting function layer 213 is formed on the first electrode 210, and the light emitting function layer 213 may include a hole injection layer, a hole transport layer, a light emitting layer, a hole blocking layer, an electron blocking layer, an electron transport layer,
  • the electron injection layer or the like is composed of one or more layers.
  • the OLED can emit white light, and then color filter through the color filter layer for color display.
  • the second sub-PDL 212 may have a width of 5-30 ⁇ m, and may further be 10 ⁇ m; the second sub-PDL 212 may have a thickness of 1-5 ⁇ m, and further may be 1.5 ⁇ m; and the second sub-PDL 212 may have a slope of 40-60°, further Can be 45°.
  • a columnar support 0105 may be disposed on the color filter substrate 10, and a support 0105 may be disposed on the four corners of each sub-pixel 0103.
  • the gap between the array substrate 20 and the color filter substrate 10 may be 10-15 ⁇ m, and further may be about 10 ⁇ m, and the void is subject to the pressability of the device.
  • the angle ⁇ 1 is about 41°, so that the light leakage light is not emitted.
  • the second sub-PDL212 width is greater than 18 ⁇ m, the angle of ⁇ 1 can be >41°; in the actual sub-pixel design, in order to maximize the aperture ratio, the width design of the second sub-PDL212 in the short-side direction As narrow as possible, in order to reduce light leakage, the width of the second sub-PDL 212 may be as small as 18 ⁇ m in the short-side direction of the sub-pixel.
  • the TFT 2001 is disposed along the short side direction of the sub-pixel, as shown in FIG. 5, which is a plan view of the color filter substrate 10 corresponding to FIG.
  • a columnar support 0105 is disposed on the color filter substrate 10, and a support 0105 may be disposed on the four corners of each sub-pixel 0103.
  • each of the sub-pixels 0103 may be arranged in an array.
  • the TFT is about 50 ⁇ m wide and is larger than 18 ⁇ m from the long side direction of the sub-pixel, there is no risk of light leakage, and even if the light leakage is a homochromatic sub-pixel, there is no risk of color shift.
  • At least one embodiment of the present disclosure provides a color filter substrate, as shown in FIG. 6, including a plurality of sub-pixels 0103, each of the sub-pixels 0103 includes a color filter layer 103, and the color filter layer 103 can be configured to transmit light.
  • the color filter layer 103 is configured to display a color through the light of the sub-pixel 0103, and a barrier wall 105 is disposed between at least two adjacent sub-pixels 0103 of different colors, and the barrier 105 is separated by the sub-pixel 105
  • the pixel 0103 extends continuously.
  • the retaining wall can support and block light.
  • Eight sub-pixels 0103 are shown in FIG. 6, but the number of sub-pixels in the embodiment of the present disclosure is not limited to that shown in the drawing.
  • the continuous extension of the barrier wall 105 between the sub-pixels 0103 separated by it means, for example, continuous extension between at least one of the sub-pixels 0103 separated by it, and continuous extension means, for example, no gap/interruption.
  • At least one embodiment of the present disclosure provides a color filter substrate.
  • the light emitted by the light emitting unit can be restricted in a specific sub-pixel, and the light color of the adjacent sub-pixel can be suppressed. The effect can avoid cross color between different sub-pixels.
  • the color filter layer 103 may include a red filter layer 1031, a green filter layer 1032, and a blue filter layer 1033, but is not limited thereto.
  • the retaining walls 105 may be distributed in a strip shape.
  • the retaining wall 105 can be disposed above the data line to provide a shading effect.
  • the data line can be configured to apply an electrical signal to the TFT.
  • the height of the retaining wall 105 The degree may be 5-10 ⁇ m, which is determined by the width of the second sub-PDL 212 and the photoresist exposure capability, and may be determined according to the target cell thickness at the time of the cassette. Since the retaining wall 105 is strip-shaped, the illumination can be well defined within a particular sub-pixel to avoid the risk of cross-coloring.
  • the height is, for example, a thickness in a direction perpendicular to the first substrate.
  • the color film substrate according to an embodiment of the present disclosure may further include a columnar (dot) support 0105, and the support 0105 may be disposed between the sub-pixels 0103 of the same color.
  • the support 0105 is located at a position where the retaining wall 105 is not disposed between adjacent sub-pixels.
  • the support 0105 and the retaining wall 105 can be located on different sides of the sub-pixel, respectively.
  • the dot-shaped support 0105 can be disposed above the TFT region, and a large support 0105 can be disposed as much as possible to stabilize the thickness of the cartridge.
  • the height of the support 0105 can be greater than the height of the retaining wall 105.
  • the support 0105 functions as a main support
  • the retaining wall 105 functions as an auxiliary support to prevent the retaining wall 105 during the process of pressing the color film substrate and the array substrate. Deformation.
  • a plurality of sub-pixels 0103 are arranged in an array, sub-pixels 0103 of the same color extend in a first direction, and sub-pixels 0103 of different colors are arranged in a second direction.
  • the cloth, in the first direction has a spacing between the different sub-pixels 0103.
  • a gap is formed at the break of the retaining wall 105.
  • the first direction is perpendicular to the second direction.
  • the first direction is a vertical direction along the paper surface
  • the second direction is a horizontal direction along the paper surface.
  • the color film substrate according to an embodiment of the present disclosure further includes a first base substrate 101 having a trapezoidal cross section, and the upper bottom edge of the trapezoid is further away from the first substrate than the lower bottom edge
  • the length of the lower base of the substrate 101 is greater than the length of the upper base.
  • the retaining wall 105 having a trapezoidal cross section is not easily inverted when the color filter substrate is pressed against the array substrate.
  • the retaining wall 105 may be a resin material (light absorbing material) that is opaque to light. Thus, the light leaking light is absorbed through the retaining wall 105 so as not to illuminate from adjacent sub-pixels. In order to further increase the utilization of light, the retaining wall 105 may also select a high reflectivity material.
  • a color film substrate according to an embodiment of the present disclosure includes at least two retaining walls 105, and has substantially the same height to facilitate supporting the thickness of the case.
  • the color filter substrate includes at least two retaining walls 105 at different locations.
  • each of the retaining walls 105 has substantially the same height. in general The same height includes, for example, the same height or a ratio of height difference to average height of less than 5%.
  • the support 0105 and the retaining wall 105 can also have substantially the same height to facilitate support of the box thickness.
  • the support 0105 and the retaining wall 105 can be obtained using the same material and using the same preparation process. It should be noted that the height of the support 0105 may also be greater than the height of the retaining wall 105.
  • the color filter substrate 10 may further include a black matrix (BM) 102, and the black matrix 102 may be disposed between adjacent sub-pixels 0103. To separate each sub-pixel 0103.
  • BM black matrix
  • the color filter substrate 10 further includes a color film stack 1030, and the color film stack 1030 includes a plurality of color film sublayers 10300 of different colors.
  • the color film sub-layer 10300 may include, for example, a red sub-layer 10301, a green sub-layer 10302, and a blue sub-layer 10301.
  • the color film laminate 1030 is opaque and can function as a black matrix.
  • the height of the color film stack 1030 is greater than the height of the color filter layer 103.
  • the retaining wall 105 is disposed on the color film stack 1030, and the orthographic projection of the retaining wall 105 on the color filter substrate is located on the color film stack 1030 on the color filter substrate 10. Inside the orthographic projection.
  • the color film stack 1030 may be disposed between adjacent sub-pixels 0103.
  • the color film laminate 1030 can function as an alternative to the partial retaining wall 105 or in place of the partial support 0105.
  • the height of the retaining wall 105/support 0105 in the display panel including the improved color film substrate of the embodiment can be smaller than that of the display device.
  • the thickness of the box can increase the strength of the retaining wall 105/support 0105.
  • the height of the color film stack 1030 can be greater than or equal to the height of the retaining wall 105.
  • the thickness of the color filter sub-layer 10300 (the height in the direction perpendicular to the first base substrate 101) may be equal to or smaller than the thickness of the color filter layer 103.
  • the red sub-layer 10301, the green sub-layer 10302, and the blue sub-layer 10301 may be equal to the thicknesses of the red filter layer 1031, the green filter layer 1032, and the blue filter layer 1033, respectively, but are not limited thereto.
  • the red sub-layer 10301, the green sub-layer 10302, and the blue sub-layer 10301 may be smaller than the thickness of the red filter layer 1031, the green filter layer 1032, and the blue filter layer 1033, respectively (in a direction perpendicular to the first substrate 101). the height of).
  • the red sub-layer 10301 can be made of the same material as the red filter layer 1031 and fabricated using the same fabrication process.
  • the green sub-layer 10302 can be made of the same material as the green filter layer 1032 and fabricated using the same fabrication process.
  • the blue sub-layer 10303 can be used. The same material as the blue filter layer 1033 was used and fabricated using the same preparation process. If a color film sub-layer 10300 and a color filter layer 103 of different thicknesses are to be formed, it can be realized by a multi-tone mask.
  • a color film substrate according to an embodiment of the present disclosure is provided to reduce light leakage.
  • the resulting loss of performance of the sub-pixels is provided with a reflective layer 106 disposed on the sidewall of the barrier wall 105, the reflective layer 106 being configured to reflect the light impinging thereon.
  • the light irradiated onto the reflective layer 106 is reflected, which improves the utilization of light emission from the light-emitting unit.
  • the reflective layer 106 may be a reflective metal to increase the reflectivity of the barrier 105 to further reflect the light emitted by the light emitting unit to the sub-pixel.
  • a reflective layer 106 may also be disposed on the sidewall of the support 0105 to improve performance.
  • the reflective layer 106 can also be replaced with a light absorbing layer configured to absorb light impinging thereon.
  • a plurality of sub-pixels 0103 are arranged in an array, and sub-pixels 0103 of the same color extend in a first direction, and sub-pixels of different colors are displayed.
  • the pixels 0103 are arranged in the second direction, and the retaining wall 105 continuously extends in the first direction. That is, the retaining wall 105 may extend from one side (one end) to the other side (the other end) of the same surface of the first base substrate 101.
  • At least one embodiment of the present disclosure provides a method of fabricating a color filter substrate, including forming a plurality of sub-pixels 0103, each of the sub-pixels 0103 includes a color filter layer 103, and the color filter layer 103 is configured to pass through the sub-pixel 0103.
  • the light displays a color
  • a barrier wall 105 is formed between at least two adjacent sub-pixels 0103 of different colors, and the barrier wall 105 continuously extends between the sub-pixels 0103 separated by the same.
  • a reflective layer 106 is disposed on a sidewall of the barrier wall 105, and the reflective layer 106 is configured to reflect light irradiated thereon.
  • the retaining wall 105 is made of a resin material that is opaque to light.
  • the retaining wall 105 has substantially the same height at each position.
  • a method of fabricating a color filter substrate according to an embodiment of the present disclosure further includes a first substrate 101 having a trapezoidal cross section, the upper bottom edge of the trapezoid being further away from the first substrate 101 with respect to the lower base.
  • the width of the lower base of the trapezoid is 10-15 ⁇ m, and the width of the upper base of the trapezoid may be 3-10 ⁇ m.
  • a plurality of sub-pixels 0103 are arranged in an array, sub-pixels 0103 of the same color are extended along a first direction, and sub-pixels 0103 of different colors are arranged along a second direction.
  • the wall 105 extends continuously along the first direction.
  • a method for fabricating a color filter substrate includes a plurality of sub-pixels 0103 The columns are arranged such that the sub-pixels 0103 of the same color extend in the first direction, and the sub-pixels 0103 of different colors are arranged in the second direction.
  • the barrier wall 105 has a space between the different sub-pixels 0103. Therefore, the retaining wall 105 can limit the light emitted by the light emitting unit in a specific sub-pixel, can suppress the influence of the light leakage light on the light color of the adjacent sub-pixel, and can avoid the cross-color between different sub-pixels.
  • a method of fabricating a color filter substrate according to an embodiment of the present disclosure further includes forming a support 0105, the support 0105 being disposed between the sub-pixels 0103 of the same color, and the support 0105 and the retaining wall 105 may have substantially the same height.
  • a method of fabricating a color filter substrate according to an embodiment of the present disclosure further includes forming a color film stack 1030, wherein the color film stack 1030 includes a plurality of color film sublayers 10300 of different colors, and the color film stack 1030 has a height greater than a color. The height of the filter layer 103.
  • the method for fabricating a color filter substrate according to an embodiment of the present disclosure may include the following steps.
  • a BM, a color filter layer (R/G/B) 103, and an Over Coating 104 are formed on the first base substrate 101 by an exposure development process, and then a support 0105 and a retaining wall 105 are formed over the flat layer 104.
  • the color film substrate can be adjusted to the shape, height, and position of the support 0105 and the retaining wall 105 to obtain suitable support, box thickness, and height uniformity. That is, a structure of BM ⁇ R ⁇ G ⁇ B ⁇ OC ⁇ retaining wall 105 / struts 0105 can be employed.
  • the formed color film substrate can be as shown in FIG.
  • a resin material having a high reflectance may be selected, and a reflective layer may be further prepared outside the retaining wall 105 and the support 0105 to enhance its reflective performance.
  • At least one embodiment of the present disclosure provides a display panel 12, as shown in FIG. 12, including at least one embodiment of the present disclosure.
  • the display panel according to at least one embodiment of the present disclosure further includes an array substrate 20, an array substrate 20, and a color filter substrate 10, and the height H of the retaining wall 105 is smaller than the array substrate 20 and the color filter substrate 10.
  • the box thickness T of the formed box is the thickness of the cell at the position of the sub-pixel 0103.
  • the height of the color film stack 1030 can be greater than or equal to the height of the retaining wall 105.
  • the ratio of the height of the color film laminate 1030 to the retaining wall 105 is less than or equal to 1.5.
  • the height of the color film laminate 1030 may be 6 ⁇ m (2 ⁇ m per sub-layer), and the height of the support layer may be 4 ⁇ m), and the height of the retaining wall 105/support 0105 may be It is 4 ⁇ m.
  • the thickness of the box can be adjusted according to the structure, which can be beneficial to the filling and adjustment of the encapsulant and control the light leakage.
  • the array substrate can be fabricated by the following method.
  • TFT layer preparation including repeating film formation and exposure on the second base substrate 201 a plurality of times, Etching and developing processes to form a TFT pattern having a thickness of 1 ⁇ m to 100 ⁇ m.
  • Common film forming processes include sputtering, plasma enhanced chemical vapor deposition (PECVD), evaporation, and spinning. Coating, knife coating, printing, inkjet printing, etc.
  • FIG. 12 shows a representative TFT structure in which a buffer layer 202, a gate electrode 203, a gate insulating layer 204, an active layer 205, an etch stop layer 206, and a source drain are sequentially formed from the second substrate 201.
  • the electrode layer 207 including the source electrode 2072 and the drain electrode 2071), the passivation layer 208, the flat layer 209, and the first electrode 210.
  • the first sub-PDL 211 and the second sub-PDL 212 are formed on the first electrode 210.
  • WOLED structure Since it is difficult to fabricate a large-sized OLED panel by using a fine metal mask (Mask), the top-emitting OLED device generally adopts a WOLED device structure, that is, sequentially vapor-deposits the light-emitting function layer 213 on the PDL layer with an open mask. And the second electrode 214, so that the planar second electrode 214 can be formed.
  • Mosk fine metal mask
  • the film formation method includes vapor deposition, inkjet printing, and the like, and then forms a structure of a planar cathode.
  • the light emitting unit 2002 may include a first electrode 210, a second electrode 214 of the light emitting function layer 213, and the light emitting unit 2002 may have a one-to-one correspondence with the sub-pixel 0103.
  • vacuum bonding can be performed to form a display panel.
  • the color film substrate and the array substrate are placed under vacuum in a box, and the vacuum alignment can control the precise alignment of the color film substrate and the array substrate. For example, the alignment error between the two is controlled within ⁇ 5 ⁇ m, which can reduce the probability of light leakage.
  • the color filter substrate further includes a color film stack 1030, and the color film stack 1030 includes a plurality of color film sub-layers 10300 of different colors, and the color film stack 1030 has a height greater than the color filter.
  • the height of the light layer 103, the retaining wall 105 is disposed on the color film stack 1030, and the orthographic projection of the retaining wall 105 on the color filter substrate 10 is located in the orthographic projection of the color film stack 1030 on the color filter substrate 10.
  • At least one embodiment of the present disclosure also provides a display device including any of the display panels provided by at least one embodiment of the present disclosure.
  • the display device may be a display device such as an OLED (Organic Light-Emitting Diode) display, and any display function such as a television, a digital camera, a mobile phone, a watch, a tablet, a notebook computer, a navigation device, and the like including the display device.
  • OLED Organic Light-Emitting Diode

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Abstract

一种彩膜基板(10)及其制作方法、显示面板(12)和显示装置。该彩膜基板(10)包括多个子像素(0103)，各子像素(0103)包括彩色滤光层(103)，彩色滤光层(103)被配置为使透过该子像素(0103)的光显示一种颜色，其中，不同颜色的至少两个相邻子像素(0103)之间设置有挡墙(105)，挡墙(105)在被其分隔的子像素(0103)间连续延伸。该彩膜基板(10)可以抑制漏光光线对临近子像素(0103)光色的影响。

Description

彩膜基板及其制作方法、显示面板和显示装置
相关申请的交叉引用
本专利申请要求于2017年5月18日递交的中国专利申请第201710353545.4号的优先权，在此全文引用上述中国专利申请公开的内容以作为本公开的示例的一部分。
技术领域
本公开至少一实施例涉及一种彩膜基板及其制作方法、显示面板和显示装置。
背景技术
有机发光二极管(Organic Light-Emitting Diode，OLED)器件相对于液晶显示器(Liquid Crystal Display，LCD)具有自发光、反应快、视角广、亮度高、色彩艳、轻薄等优点，被认为是下一代显示技术。
发明内容
本公开的至少一实施例涉及一种彩膜基板及其制作方法、显示面板，以抑制漏光光线对临近子像素光色的影响。
本公开的至少一实施例提供一种彩膜基板，包括多个子像素，各子像素包括彩色滤光层，所述彩色滤光层被配置为使透过该子像素的光显示一种颜色，其中，不同颜色的至少两个相邻子像素之间设置有挡墙，所述挡墙在被其分隔的子像素间连续延伸。
本公开的至少一实施例还提供一种彩膜基板的制作方法，包括形成多个子像素，各子像素包括彩色滤光层，所述彩色滤光层被配置为使透过该子像素的光显示一种颜色，其中，不同颜色的至少两个相邻子像素之间形成有挡墙，所述挡墙在被其分隔的子像素间连续延伸。
本公开的至少一实施例还提供一种显示面板，包括本公开的至少一实施例提供的任一彩膜基板。
本公开的至少一实施例还提供一种显示装置，包括本公开的至少一实施 例提供的任一显示面板。
附图说明
为了更清楚地说明本公开实施例的技术方案，下面将对实施例的附图作简单地介绍，显而易见地，下面描述中的附图仅仅涉及本公开的一些实施例，而非对本公开的限制。
图1为一种顶发射OLED显示面板的剖面示意图；
图2为一种顶发射OLED显示面板的阵列基板的俯视示意图；
图3为与图2的阵列基板对应的彩膜基板的俯视示意图；
图4为另一种顶发射OLED显示面板的阵列基板的俯视示意图；
图5为与图4的阵列基板对应的彩膜基板的俯视示意图；
图6为本公开一实施例提供的一种彩膜基板的俯视示意图；
图7为本公开一实施例提供的包括图6所示的彩膜基板的显示面板的剖视示意图(图6所示的彩膜基板AB处剖视图)；
图8为本公开一实施例提供的包括图6所示的彩膜基板的显示面板的剖视示意图(图6所示的彩膜基板的CD处剖视图)；
图9为本公开一实施例提供的一种彩膜基板的剖视示意图；
图10为本公开一实施例提供的包括反射层的彩膜基板形成的显示面板减少漏光的示意图；
图11为本公开一实施例提供的一种彩膜基板的附视示意图；
图12为本公开一实施例提供的一种显示面板的剖视示意图。
具体实施方式
为使本公开实施例的目的、技术方案和优点更加清楚，下面将结合本公开实施例的附图，对本公开实施例的技术方案进行清楚、完整地描述。显然，所描述的实施例是本公开的一部分实施例，而不是全部的实施例。基于所描述的本公开的实施例，本领域普通技术人员在无需创造性劳动的前提下所获得的所有其他实施例，都属于本公开保护的范围。
除非另外定义，本公开使用的技术术语或者科学术语应当为本公开所属 领域内具有一般技能的人士所理解的通常意义。本公开中使用的“第一”、“第二”以及类似的词语并不表示任何顺序、数量或者重要性，而只是用来区分不同的组成部分。同样，“包括”或者“包含”等类似的词语意指出现该词前面的元件或者物件涵盖出现在该词后面列举的元件或者物件及其等同，而不排除其他元件或者物件。“连接”或者“相连”等类似的词语并非限定于物理的或者机械的连接，而是可以包括电性的连接，不管是直接的还是间接的。“上”、“下”、“左”、“右”等仅用于表示相对位置关系，当被描述对象的绝对位置改变后，则该相对位置关系也可能相应地改变。
OLED器件通常由阳极、发光功能层213和阴极组成，根据发光面不同可分为底发射和顶发射两种，由于顶发射器件可以获得更大的开口率，近年来成为研究的热点。
对于喷墨打印OLED器件来说，制备顶发射难度很大，这是因为顶发射OLED器件要求发光功能层(EL)各膜层厚度均匀，为了进一步提升顶发射器件的色域，有一种OLED结合彩色滤光(OLED+CF)技术，OLED器件经过相应彩色滤光(Color Filter，CF)层后可以过滤掉相应的不纯，而保留特定的光谱，从而提升OLED器件单色色纯度，从而提升OLED器件色域。
然而，如图1所示，彩膜基板10的第一衬底基板101上可设置黑矩阵102和彩色滤光层103，各子像素0103包括彩色滤光层103，彩色滤光层103被配置为使透过该子像素的光显示一种颜色，彩色滤光层103可包括红色滤光层1031、绿色滤光层1032和蓝色滤光层1033。根据光透过子像素后显示的颜色，子像素0103可包括红色子像素、绿色子像素和蓝色子像素。阵列基板20包括发光单元2002，发光单元2002可包括第一电极210，第一电极210可设置在第二衬底基板201上。第一电极210可采用透明导电氧化物，例如氧化铟锡(Indium Tin Oxide，ITO)，但不限于此。图1中未示出发光单元2002的全部结构。
如图1所示，顶发射OLED器件，阵列基板20和彩膜基板10对盒后两者之间存在空隙，从而各子像素(例如红绿蓝)0103间发光时容易发生漏光而相互串色。本公开的实施例中以一个像素包括红绿蓝三基色的子像素为例进行说明，但并不限于此。子像素还可以采用其他颜色。
如图1所示，因阵列基板20和彩膜基板10之间空隙的存在，出现漏光。 θ1是入射角，θ2是出射角，空气的折射率为1.0，玻璃的折射率为1.5(以第一衬底基板101为玻璃基板为例)，这样当θ1等于41°时，θ2等于90°，也就是说，入射角θ1＞41°光线无法射出，不会发生漏光，入射角θ1小于41°，光线可以射出，发生漏光。
图1中，第一电极210上可设置像素限定层(Pixel Definition Layer，PDL)。例如，如图1所示，对于喷墨打印器件，像素限定层可包括第一子像素限定层(第一子PDL)211和第二子像素限定层(第二子PDL)212双层结构，第一子PDL211可用来定义发光单元2002的实际发光面积，第一子PDL211可使用高表面能的材料，例如SiO2、Si3N4等。第二子PDL212可用于喷墨打印器件墨水的盛放，第二子PDL212可使用表面具备高的疏液性能的材料，可防止墨水溢流到子像素外面。第二子PDL212可采用含氟亚克力树脂，氟化聚酰亚胺树脂等材料。
而对于蒸镀器件，不需要特别的表面特性，第二子PDL212可采用聚酰亚胺、亚克力树脂、SiO2、陶瓷等材料。
如图2所示，阵列基板包含薄膜晶体管(Thin Film Transistor，TFT)2001、OLED子像素区、第一子PDL211和第二子PDL212结构。可根据内部补偿电路需要，设置2T1C、3T2C、3T1C等结构。如图2所示，TFT2001可设置在子像素的长边方向，图2中示出了沿每个子像素的长边方向设置三个TFT2001。OLED子像素区可用来定义子像素的发光形状、位置和大小。
例如，形成PDL之后，在第一电极210上形成发光功能层213，发光功能层213可包括空穴注入层、空穴传输层、发光层、空穴阻挡层、电子阻挡层、电子传输层、电子注入层等其中的一层或多层组成。OLED可发白光，再通过彩色滤光层滤色从而进行彩色显示。
例如，第二子PDL212的宽度可为5-30μm，进一步可为10μm；第二子PDL212厚度可为1-5μm，进一步可为1.5μm；第二子PDL212坡脚可为40-60°，进一步可为45°。
如图3所示，可在彩膜基板10上设置柱状的支撑物0105，支撑物0105可设置在各子像素0103的四角上。
例如，阵列基板20和彩膜基板10之间的空隙可为10-15μm，进一步可为10μm左右，空隙受制于设备压合能力。
例如，从子像素的短边方向看，当空隙为15μm时，第一子PDL211宽度13μm时，θ1角度约为41°，这样刚好漏光光线射不出。考虑到设备对位误差±5μm，第二子PDL212宽度大于18μm时，才能使得θ1的角度＞41°；实际子像素设计时，为了尽可能提升开口率，短边方向第二子PDL212的宽度设计会尽可能窄，为了减少漏光，子像素的短边方向上，第二子PDL212的宽度最小可为18μm。
显然，提升开口率和减小漏光是个矛盾，对于高分辨OLED器件来说，漏光和开口率必须综合考虑。
如图4所示，阵列基板20中，TFT2001沿着子像素的短边方向设置，如图5所示，为与图4对应的彩膜基板10的平面示意图。彩膜基板10上设置柱状的支撑物0105，支撑物0105可设置在各子像素0103的四角上。彩膜基板10中，各子像素0103可呈阵列排布。
例如，如图4所示，从子像素长边方向，由于TFT尺寸约为50μm宽，已经大于18μm，所以不会发生漏光风险，即便漏光也是同色子像素，不会引起色偏的风险。
本公开至少一实施例提供一种彩膜基板，如图6所示，包括多个子像素0103，各子像素0103包括彩色滤光层103，彩色滤光层103可被配置为透过光。彩色滤光层103被配置为使透过该子像素0103的光显示一种颜色，不同颜色的至少两个相邻子像素0103之间设置有挡墙105，挡墙105在被其分隔的子像素0103间连续延伸。挡墙可起到支撑和挡光的作用。图6中示出了8个子像素0103，但本公开实施例中子像素的个数不限于图中所示。挡墙105在被其分隔的子像素0103间连续延伸例如是指在被其分隔的至少一个子像素0103间连续延伸，连续延伸例如是指没有间隔/间断。
本公开至少一实施例提供一种彩膜基板，因在子像素0103间设置连续延伸的挡墙，可限制发光单元发出的光在特定的子像素中，可抑制漏光光线对临近子像素光色的影响，可以避免不同子像素间串色。
例如，如图6所示，彩色滤光层103可包括红色滤光层1031、绿色滤光层1032和蓝色滤光层1033，但不限于此。
例如，挡墙105可呈条状分布。挡墙105可设置于数据线上方，起到遮光作用。例如，数据线可被配置为给TFT施加电信号。例如，挡墙105的高 度可为5-10μm，其由第二子PDL212的宽度和光刻胶曝光能力决定，可根据对盒时目标盒厚决定。由于挡墙105成条状，可以很好限定发光在特定的子像素内，避免发生串色的风险。高度例如是指垂直于第一衬底基板的方向上的厚度。
根据本公开一实施例提供的彩膜基板，如图6所示，还可包括柱状(点状)的支撑物0105，支撑物0105可设置在相同颜色的子像素0103之间。例如，为了更好的起到支撑作用，支撑物0105位于相邻子像素间没有设置挡墙105的位置处。例如，支撑物0105和挡墙105可分别位于子像素的不同的边上。例如，点状支撑物0105可设置于TFT区域上方，可以尽可能设置大的支撑物0105，起到稳固盒厚的目的。支撑物0105的高度可大于挡墙105的高度，从而，支撑物0105起到主支撑的作用，挡墙105起到辅助支撑的作用，可避免彩膜基板与阵列基板压合过程中挡墙105变形。
根据本公开一实施例提供的彩膜基板，如图6所示，多个子像素0103呈阵列排布，同一颜色的子像素0103沿第一方向延伸，不同颜色的子像素0103沿第二方向排布，在第一方向上，挡墙105在不同子像素0103间具有间隔。挡墙105断开处即形成间隔。彩膜基板与阵列基板压合过程中，若挡墙105受力不均，则易变形，间隔的设置，可易于释放、分散压合力，即使有变形，变形也可被限制在局部。例如，第一方向垂直第二方向。例如，第一方向为沿纸面的竖直方向，第二方向为沿纸面的水平方向。
根据本公开一实施例提供的彩膜基板，如图7所示，还包括第一衬底基板101，挡墙105具有梯形截面，梯形的上底边相对于下底边更远离第一衬底基板101，下底边的长度大于上底边的长度。具有梯形截面的挡墙105在彩膜基板与阵列基板压合时，不易倒。
根据本公开一实施例提供的彩膜基板，挡墙105可采用不透光的树脂材料(吸光材料)。从而，漏光的光线经过挡墙105会被吸收掉，从而不会从临近子像素发光。为了进一步提高光的利用率，挡墙105也可选择高反射率材料。
根据本公开一实施例提供的彩膜基板，如图7所示，包括至少两个挡墙105，且其具有大体相同的高度以利于支撑盒厚。例如，彩膜基板包括位于不同位置的至少两个挡墙105。例如，各挡墙105具有大体相同的高度。大体 相同的高度例如包括同一高度或高度差与平均高度之比小于5％。例如，支撑物0105和挡墙105也可具有大体相同的高度，以利于支撑盒厚。支撑物0105和挡墙105可采用相同材料并采用同一制备工艺获得。需要说明的是，支撑物0105的高度也可以大于挡墙105的高度。
根据本公开一实施例提供的彩膜基板，如图7和8所示，彩膜基板10还可包括黑矩阵(Black Matrix，BM)102，黑矩阵102可设置在相邻子像素0103之间以分隔各子像素0103。
根据本公开一实施例提供的彩膜基板，如图7和8所示，彩膜基板10还可包括彩膜叠层1030，彩膜叠层1030包括多种不同颜色的彩膜子层10300，彩膜子层10300例如可包括红色子层10301、绿色子层10302和蓝色子层10301。彩膜叠层1030不透光，可起到黑矩阵的效果。彩膜叠层1030的高度大于彩色滤光层103的高度，挡墙105设置在彩膜叠层1030上，挡墙105在彩膜基板上的正投影位于彩膜叠层1030在彩膜基板10上的正投影内。彩膜叠层1030可设置在相邻子像素0103之间。
从而，彩膜叠层1030可起到替代部分挡墙105或替代部分支撑物0105的作用，包含本实施例提高的彩膜基板的显示面板中挡墙105/支撑物0105的高度可小于显示装置的盒厚，可提高挡墙105/支撑物0105的强度。例如，彩膜叠层1030的高度可大于或等于挡墙105的高度。
例如，彩膜子层10300的厚度(垂直于第一衬底基板101的方向上的高度)可等于或小于彩色滤光层103的厚度。例如，红色子层10301、绿色子层10302和蓝色子层10301可分别与红色滤光层1031、绿色滤光层1032和蓝色滤光层1033的厚度相等，但不限于此。红色子层10301、绿色子层10302和蓝色子层10301可分别小于红色滤光层1031、绿色滤光层1032和蓝色滤光层1033的厚度(垂直于第一衬底基板101的方向上的高度)。例如，红色子层10301可与红色滤光层1031采用相同材料并使用同一制备工艺制作，绿色子层10302可与绿色滤光层1032采用相同材料并使用同一制备工艺制作，蓝色子层10303可与蓝色滤光层1033采用相同材料并使用同一制备工艺制作。若需制作不同厚度的彩膜子层10300和彩色滤光层103，可通过多色调掩模板来实现。
如图9所示，根据本公开一实施例提供的彩膜基板，为了减少漏光光线 造成的其所在子像素的效能的损失，在挡墙105的侧壁上设置有反射层106，反射层106被配置为反射照射到其上的光。
例如，如图10所示，照射到反射层106上的光被反射，提高了发光单元的出光的利用率。反射层106可采用反射型金属以提高挡墙105的反射率，以进一步反射发光单元发出的光到此子像素出光。例如，在支撑物0105的侧壁上也可设置有反射层106，以提高效能。或者，反射层106也可以替换为吸光层，吸光层吸被配置为吸收照射到其上的光。
如图11所示，根据本公开一实施例提供的彩膜基板，为了更好的减少漏光，多个子像素0103呈阵列排布，同一颜色的子像素0103沿第一方向延伸，不同颜色的子像素0103沿第二方向排布，挡墙105沿着第一方向连续延伸。即，挡墙105可从第一衬底基板101的同一表面的一侧(一端)延伸至另一侧(另一端)。
本公开至少一实施例提供一种彩膜基板的制作方法，包括形成多个子像素0103，各子像素0103包括彩色滤光层103，彩色滤光层103被配置为使透过该子像素0103的光显示一种颜色，不同颜色的至少两个相邻子像素0103之间形成有挡墙105，挡墙105在被其分隔的子像素0103间连续延伸。
根据本公开一实施例提供的彩膜基板的制作方法，在挡墙105的侧壁上设置有反射层106，反射层106被配置为反射照射到其上的光。
根据本公开一实施例提供的彩膜基板的制作方法，挡墙105采用不透光的树脂材料。
根据本公开一实施例提供的彩膜基板的制作方法，挡墙105在各位置处具有大体相同的高度。
根据本公开一实施例提供的彩膜基板的制作方法，还包括第一衬底基板101，挡墙105具有梯形截面，梯形的上底边相对于下底边更远离第一衬底基板101。例如，梯形的下底边的宽度10-15μm，梯形的上底边宽度可为3-10μm。
根据本公开一实施例提供的彩膜基板的制作方法，多个子像素0103呈阵列排布，同一颜色的子像素0103沿第一方向延伸，不同颜色的子像素0103沿第二方向排布，挡墙105沿着第一方向连续延伸。
根据本公开一实施例提供的彩膜基板的制作方法，多个子像素0103呈阵 列排布，同一颜色的子像素0103沿第一方向延伸，不同颜色的子像素0103沿第二方向排布，在第一方向上，挡墙105在不同子像素0103间具有间隔。从而，挡墙105可限制发光单元发出的光在特定的子像素中，可抑制漏光光线对临近子像素光色的影响，可以避免不同子像素间串色。
根据本公开一实施例提供的彩膜基板的制作方法，还包括形成支撑物0105，支撑物0105设置在相同颜色的子像素0103之间，支撑物0105和挡墙105可具有大体相同的高度。
根据本公开一实施例提供的彩膜基板的制作方法，还包括形成彩膜叠层1030，彩膜叠层1030包括多种不同颜色的彩膜子层10300，彩膜叠层1030的高度大于彩色滤光层103的高度。
根据本公开一实施例提供的彩膜基板的制作方法，可包括如下步骤。
在第一衬底基板101上通过曝光显影工艺形成BM、彩色滤光层(R/G/B)103以及平坦层(Over Coating)104，然后在平坦层104上方形成支撑物0105和挡墙105，彩膜基板可通过调整支撑物0105和挡墙105的形状、高度、位置以获得合适的支撑、盒厚和高度均匀性。即，可采用BM→R→G→B→OC→挡墙105/撑物0105的结构。形成的彩膜基板可如图12所示。为了提升支撑物0105和挡墙105的反射率，可以选择反射率高的树脂材料，可以进一步在挡墙105和支撑物0105外侧制备反射层以提升其反光性能。
本公开至少一实施例提供一种显示面板12，如图12所示，包括本公开至少一实施例提供任一彩膜基板。
根据本公开至少一实施例提供的显示面板，如图12所示，还包括阵列基板20，阵列基板20和彩膜基板10对盒，挡墙105的高度H小于阵列基板20和彩膜基板10形成的盒的盒厚T。例如，盒厚T为子像素0103位置处的盒的厚度。例如，彩膜叠层1030的高度可大于或等于挡墙105的高度。例如，彩膜叠层1030与挡墙105的高度之比小于或等于1.5。例如，若盒厚T为8μm，彩膜叠层1030的高度可为6μm(每个子层可为2μm)，起到盒厚支撑作用的可为4μm)，挡墙105/支撑物0105的高度可为4μm。盒厚可根据结构需要进行调整，可对封装胶填充以及调整有利，且控制漏光。
例如，阵列基板可采用如下方法制作。
(1)TFT层制备：包括在第二衬底基板201上多次重复成膜、曝光， 刻蚀，显影工艺来形成厚度为1μm-100μm的TFT图案的步骤，常见的成膜工艺包括溅射法、等离子体增强化学的气相沉积法(Plasma Enhanced Chemical Vapor Deposition，PECVD)、蒸镀、旋涂、刮涂、印刷、喷墨打印等。图12给出了一代表性的TFT结构，从第二衬底基板201往上依次形成缓冲层202、栅极203，栅极绝缘层204、有源层205、刻蚀阻挡层206、源漏极层207(包括源极2072和漏极2071)、钝化层208、平坦层209、第一电极210。
(2)PDL层制作：在第一电极210上形成第一子PDL211和第二子PDL212。
(3)发光功能层213制备：
WOLED结构：由于采用精细金属掩模(Mask)难于制作大尺寸OLED面板，顶发射OLED器件一般采取WOLED器件结构，也即在PDL层上用开口掩模(Open Mask)依次蒸镀发光功能层213和第二电极214，从而可形成面状的第二电极214。
当然也可直接通过形成RGB三原色结构，成膜方式包括蒸镀、喷墨打印等，然后形成面状阴极的结构。
例如，发光单元2002可包括第一电极210、发光功能层213第二电极214，发光单元2002可与子像素0103一一对应。
形成阵列基板20和彩膜基板10后，可进行真空压合对合，以形成显示面板。彩膜基板和阵列基板在真空下对盒，真空对合可控制彩膜基板和阵列基板的精确对位，例如两者间对位误差控制在±5μm内，可以减少漏光几率。
根据本公开至少一实施例提供的显示面板，彩膜基板还包括彩膜叠层1030，彩膜叠层1030包括多种不同颜色的彩膜子层10300，彩膜叠层1030的高度大于彩色滤光层103的高度，挡墙105设置在彩膜叠层1030上，挡墙105在彩膜基板10上的正投影位于彩膜叠层1030在彩膜基板10上的正投影内。
本公开的实施例中，彩膜基板及其制作方法和显示面板中，相同或相似之处可相互参见，在此不再赘述。
本公开的至少一实施例还提供一种显示装置，包括本公开的至少一实施例提供的任一显示面板。
例如，显示装置可以为OLED(Organic Light-Emitting Diode，有机发光二极管)显示器等显示器件以及包括这些显示器件的电视、数码相机、手机、手表、平板电脑、笔记本电脑、导航仪等任何具有显示功能的产品或者部件。
有以下几点需要说明：
(1)除非另作定义，本公开实施例以及附图中，同一附图标记代表同一含义。
(2)本公开实施例附图中，只涉及到与本公开实施例涉及到的结构，其他结构可参考通常设计。
(3)为了清晰起见，在用于描述本公开的实施例的附图中，层或区域的厚度被放大。可以理解，当诸如层、膜、区域或基板之类的元件被称作位于另一元件“上”或“下”时，该元件可以“直接”位于另一元件“上”或“下”，或者可以存在中间元件。
(4)在不冲突的情况下，本公开的同一实施例及不同实施例中的特征可以相互组合。
以上所述，仅为本公开的具体实施方式，但本公开的保护范围并不局限于此，任何熟悉本技术领域的技术人员在本公开揭露的技术范围内，可轻易想到变化或替换，都应涵盖在本公开的保护范围之内。因此，本公开的保护范围应以所述权利要求的保护范围为准。

Claims (20)

  1. 一种彩膜基板，包括多个子像素，各子像素包括彩色滤光层，所述彩色滤光层被配置为使透过该子像素的光显示一种颜色，其中，不同颜色的至少两个相邻子像素之间设置有挡墙，所述挡墙在被其分隔的子像素间连续延伸。
  2. 根据权利要求1所述的彩膜基板，其中，在所述挡墙的侧壁上设置有反射层。
  3. 根据权利要求1或2所述的彩膜基板，其中，所述挡墙采用不透光的树脂材料。
  4. 根据权利要求1-3任一项所述的彩膜基板，其中，所述彩膜基板包括至少两个挡墙，所述至少两个挡墙具有大体相同的高度。
  5. 根据权利要求1-4任一项所述的彩膜基板，还包括衬底基板，其中，所述挡墙具有梯形截面，所述梯形的上底边相对于所述下底边更远离所述衬底基板，所述下底边的长度大于所述上底边的长度。
  6. 根据权利要求1-5任一项所述的彩膜基板，其中，所述多个子像素呈阵列排布，同一颜色的子像素沿第一方向延伸，不同颜色的子像素沿第二方向排布，所述第一方向和所述第二方向相交，所述挡墙沿着所述第一方向连续延伸。
  7. 根据权利要求1-5任一项所述的彩膜基板，其中，所述多个子像素呈阵列排布，同一颜色的子像素沿第一方向延伸，不同颜色的子像素沿第二方向排布，所述第一方向和所述第二方向相交，在所述第一方向上，所述挡墙在不同子像素间具有间隔。
  8. 根据权利要求1-7任一项所述的彩膜基板，还包括支撑物，其中，所述支撑物设置在相同颜色的子像素之间，所述支撑物的高度大于或等于所述挡墙的高度。
  9. 根据权利要求1-7任一项所述的彩膜基板，还包括彩膜叠层，其中，所述彩膜叠层包括多种不同颜色的彩膜子层，所述彩膜叠层的高度大于所述彩色滤光层的高度。
  10. 根据权利要求9所述的彩膜基板，其中，所述挡墙设置在所述彩膜叠层上，所述挡墙在所述彩膜基板上的正投影位于所述彩膜叠层在所述彩膜 基板上的正投影内。
  11. 一种彩膜基板的制作方法，包括形成多个子像素，各子像素包括彩色滤光层，所述彩色滤光层被配置为使透过该子像素的光显示一种颜色，其中，不同颜色的至少两个相邻子像素之间形成有挡墙，所述挡墙在被其分隔的子像素间连续延伸。
  12. 根据权利要求11所述的彩膜基板的制作方法，还包括在所述挡墙的侧壁上形成反射层。
  13. 根据权利要求11或12所述的彩膜基板的制作方法，其中，所述挡墙采用不透光的树脂材料。
  14. 根据权利要求11-13任一项所述的彩膜基板的制作方法，其中，所述彩膜基板包括至少两个挡墙，所述至少两个挡墙具有大体相同的高度。
  15. 根据权利要求11-14任一项所述的彩膜基板的制作方法，还包括衬底基板，其中，所述挡墙具有梯形截面，所述梯形的上底边相对于下底边更远离所述衬底基板，所述下底边的长度大于所述上底边的长度。
  16. 根据权利要求11-15任一项所述的彩膜基板的制作方法，其中，所述多个子像素呈阵列排布，同一颜色的子像素沿第一方向延伸，不同颜色的子像素沿第二方向排布，所述第一方向和所述第二方向相交，所述挡墙沿着第一方向连续延伸。
  17. 根据权利要求11-15任一项所述的彩膜基板的制作方法，其中，所述多个子像素呈阵列排布，同一颜色的子像素沿第一方向延伸，不同颜色的子像素沿第二方向排布，所述第一方向和所述第二方向相交，在所述第一方向上，所述挡墙在不同子像素间具有间隔。
  18. 一种显示面板，包括权利要求1-10任一项所述的彩膜基板。
  19. 根据权利要求18所述的显示面板，还包括阵列基板，其中，所述阵列基板和所述彩膜基板对盒，所述挡墙的高度小于所述阵列基板和所述彩膜基板形成的盒的盒厚。
  20. 一种显示装置，包括权利要求18-19任一项所述的显示面板。
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