WO2018223314A1 - 管式perc太阳能电池的镀膜设备及镀膜方法 - Google Patents

管式perc太阳能电池的镀膜设备及镀膜方法 Download PDF

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Publication number
WO2018223314A1
WO2018223314A1 PCT/CN2017/087443 CN2017087443W WO2018223314A1 WO 2018223314 A1 WO2018223314 A1 WO 2018223314A1 CN 2017087443 W CN2017087443 W CN 2017087443W WO 2018223314 A1 WO2018223314 A1 WO 2018223314A1
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Prior art keywords
silane
flow rate
graphite boat
gas
film
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Ceased
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PCT/CN2017/087443
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English (en)
French (fr)
Inventor
林纲正
方结彬
赖俊文
何达能
陈刚
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Zhejiang Aiko Solar Energy Technology Co Ltd
Guangdong Aiko Solar Energy Technology Co Ltd
Original Assignee
Zhejiang Aiko Solar Energy Technology Co Ltd
Guangdong Aiko Solar Energy Technology Co Ltd
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Application filed by Zhejiang Aiko Solar Energy Technology Co Ltd, Guangdong Aiko Solar Energy Technology Co Ltd filed Critical Zhejiang Aiko Solar Energy Technology Co Ltd
Priority to US16/620,339 priority Critical patent/US20200199746A1/en
Priority to PCT/CN2017/087443 priority patent/WO2018223314A1/zh
Priority to KR1020197033717A priority patent/KR102299855B1/ko
Priority to JP2019567618A priority patent/JP6951476B2/ja
Priority to EP17912428.4A priority patent/EP3636799B1/en
Publication of WO2018223314A1 publication Critical patent/WO2018223314A1/zh
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

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    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/547—Monocrystalline silicon PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Definitions

  • the invention relates to the field of PERC solar cells, in particular to a coating device for a tubular PERC solar cell, and a coating method for a tubular PERC solar cell.
  • the plate PECVD consists of different chambers. Each chamber is coated with a film. Once the device is fixed, the number of layers of the composite film is fixed. Therefore, the disadvantage of the plate PECVD is that The combination of the composite film cannot be flexibly adjusted, and the passivation effect of the back film cannot be optimized, thereby limiting the photoelectric conversion efficiency of the battery. At the same time, the plate PECVD uses an indirect plasma method, and the passivation effect of the film layer is not ideal. Plate PECVD also has the disadvantage of low uptime and long maintenance time, which affects productivity and output.
  • the invention adopts a tubular PECVD technology to deposit a composite film on the back side of a silicon wafer to produce a PERC high-efficiency solar cell. Since the tubular PECVD technology adopts the direct plasma method, the combination and composition of the composite membrane can be flexibly adjusted, and the passivation effect of the membrane layer is good, and the photoelectric conversion efficiency of the PERC solar cell can be greatly improved.
  • the excellent passivation performance and process flexibility of the tubular PECVD technology can also reduce the thickness of the aluminum oxide film layer and reduce the consumption of TMA. At the same time, the tubular PERC technology is easy to maintain and has a high uptime. Combining the above factors, compared with the plate PECVD technology, tubular PECVD technology has a significant overall cost advantage for producing high-performance PERC batteries.
  • tubular PECVD technology has a low scratch rate and good EL yield due to the scratching of the silicon wafer, especially the high proportion of EL scratches, which affects the mass production of the technology.
  • the tubular PECVD coating equipment is formed by inserting a silicon wafer into a graphite boat and then feeding the graphite boat into a quartz tube for coating deposition.
  • the graphite boat fixes the silicon wafer on the graphite boat wall through three card points, one side of the silicon wafer is in contact with the graphite boat wall, and a film layer is deposited on the other side of the silicon wafer.
  • the silicon wafer should be in close contact with the graphite boat wall. Therefore, the width of the card slot is set to be small, about 0.25 mm.
  • the silicon wafer will rub against the graphite boat wall, causing the silicon wafer to scratch the side of the graphite boat wall.
  • Tube-type PECVD is used for the front coating of conventional solar cells. Scratches do not adversely affect the finished battery. The reason is that there is no PN junction and coating on the back of the wafer. Scratches do not affect the battery's electrical performance and EL yield.
  • the back film of PERC battery is made by tubular PECVD.
  • the scratching seriously affects the pass rate of the finished battery.
  • the problem is: in the process of inserting the graphite boat into the graphite boat, the front side of the silicon wafer will contact the graphite boat wall, and the front PN junction is Scratches cause scratches in the EL test and affect the electrical performance of the battery.
  • the general pretreatment method is to deposit a thin layer of silicon nitride on the surface of the graphite boat in order to reduce the absorption of the coating by the graphite boat during the subsequent silicon coating process to ensure the thickness and quality of the coating on the silicon wafer.
  • the conventional pretreatment process of graphite boat generally requires three steps of drying, inserting silicon nitride and emptying silicon nitride.
  • the plating time of the silicon nitride plate is long, and the insert is to prevent the deposition of the graphite boat and the silicon wafer too thick, which affects the deposition of the back aluminum oxide, thereby affecting the EL yield and photoelectric conversion efficiency of the battery.
  • the empty boat is coated with silicon nitride for a short time.
  • the purpose is to coat the graphite boat with a thin layer of silicon nitride to reduce the damage of the silicon wafer to the card point and protect the card point, thus reducing the silicon chip collapse.
  • the edge gap reduces the chipping rate and the appearance defect rate of the silicon wafer.
  • the high resistivity of silicon nitride affects the uniformity of the back aluminum oxide coating.
  • the EL test produces black edges and black dots, which affect the EL yield of the battery.
  • the EL black-side battery conversion efficiency is significantly lower.
  • the silicon wafer is very expensive because the insert is coated for a long time. Because the surface of the wafer is too thick, the silicon wafer will be greatly bent, which will cause the coating process to be interrupted. It needs to be re-plated and takes up production time. . With some unqualified films, the degree of bending is greater, so the silicon wafers for the plated boat can not be too bad, which seriously consumes the silicon wafer and is costly.
  • the technical problem to be solved by the present invention is to provide a coating device for a tubular PERC solar cell, which has a simple structure, simplifies the pretreatment step of the graphite boat, saves the consumption of the silicon wafer, avoids scratching the silicon wafer, and improves the battery. EL yield.
  • the technical problem to be solved by the present invention is to provide a coating method for a tubular PERC solar cell, simplify the graphite boat pretreatment step, save the consumption of the silicon wafer, avoid scratching the silicon wafer, and improve the EL yield of the battery. .
  • the present invention provides a coating apparatus for a tubular PERC solar cell, comprising a wafer loading area, a furnace body, a special gas cabinet, a vacuum system, a heating system, a control system, and a graphite boat, the special gas cabinet a first gas line for introducing silane, a second gas line for introducing ammonia gas, a third gas line for introducing trimethylaluminum, and a fourth for introducing nitrous oxide a gas line and a fifth gas line for introducing methane;
  • the graphite boat is used for loading and unloading a silicon wafer, and the graphite boat is subjected to pretreatment before or after multiple coatings, and the pretreatment includes:
  • At least one layer of silicon carbide film is plated on the surface of the dried graphite boat.
  • the preprocessing includes:
  • the graphite boat is placed in a tubular PECVD coating device for drying, the drying temperature is 300-480 ° C, and the time is 10-60 min;
  • the graphite boat is again placed in the tubular PECVD coating equipment, and at least one layer of silicon carbide film is plated on the surface of the graphite boat.
  • the coating step of the silicon carbide film includes:
  • the temperature is raised to 380-480 ° C, ammonia gas is introduced, the plasma power is 2000-5000 W, the flow rate is 1-8 slm, and the time is 2-10 min;
  • Methane and silane are introduced, the methane flow rate is 2-8 slm, the silane flow rate is 200-800 sccm, and the time is 5-30 s;
  • Methane and silane are introduced, the plasma power is 3000-10000w, the time is 1-4 hours, the methane flow rate is 2-8 slm, and the silane flow rate is 200-800 sccm;
  • the coating step of the silicon carbide film includes:
  • Methane and silane are introduced, the methane flow rate is 3-6 slm, the silane flow rate is 300-600 sccm, and the time is 10-20 s;
  • Methane and silane are introduced, the plasma power is 5000-8000w, the time is 2-3 hours, the methane flow rate is 3-6 slm, and the silane flow rate is 300-600 sccm;
  • the graphite boat includes a card point
  • the card point includes a card point axis, a card point cap and a card point base
  • the card point axis is mounted on the card point base
  • the card point cap and the The card point axis is connected
  • the card point slot forms a card slot between the card point cap and the card point base, and the depth of the card point slot is 0.5-1 mm.
  • the depth of the card point groove of the graphite boat is 0.6-0.8 mm
  • the diameter of the card point base is 6-15 mm
  • the slope angle of the card point cap is 35-45 degrees
  • the thickness of the card cap is It is 1-1.3mm.
  • the depth of the card point groove of the graphite boat is 0.7-0.8 mm
  • the diameter of the card point base is 8-12 mm
  • the angle of the bevel surface of the card point cap is 37-42 degrees
  • the thickness of the card cap is It is 1.1-1.2mm.
  • the present invention also discloses a coating method for a tubular PERC solar cell, comprising:
  • the coating method includes:
  • the graphite boat is placed in a tubular PECVD coating equipment for drying, the drying temperature is 300-480 ° C, and the time is 10-60 min;
  • the graphite boat is again placed in the tubular PECVD coating equipment, and at least one silicon carbide film is plated on the surface of the graphite boat.
  • the coating method of the silicon carbide film is as follows:
  • the temperature is raised to 380-480 ° C, ammonia gas is introduced, the plasma power is 2000-5000 W, the flow rate is 1-8 slm, and the time is 2-10 min;
  • Methane and silane are introduced, the methane flow rate is 2-8 slm, the silane flow rate is 200-800 sccm, and the time is 5-30 s;
  • Methane and silane are introduced, the plasma power is 3000-10000w, the time is 1-4 hours, the methane flow rate is 2-8 slm, and the silane flow rate is 200-800 sccm;
  • the processed silicon wafer is placed on a graphite boat and sent to a tubular PECVD coating device through a graphite boat to form a back composite film.
  • the coating method of the back composite film is as follows:
  • the aluminum oxide film is deposited by TMA and N 2 O, the gas flow rate of TMA is 250-500 sccm, the ratio of TMA to N 2 O is 1/15-25, and the plasma power is 2000-5000 w;
  • Silane, ammonia and nitrous oxide are used to deposit silicon oxynitride film.
  • the gas flow rate of silane is 50-200sccm, the ratio of silane to laughing gas is 1/10-80, the flow rate of ammonia gas is 0.1-5slm, and the plasma power is 4000-. 6000w;
  • the silicon nitride film is deposited by silane and ammonia gas.
  • the gas flow rate of silane is 500-1000 sccm, the ratio of silane to ammonia gas is 1/6-15, the deposition temperature of silicon nitride is 390-410 ° C, and the time is 100-400 s. , plasma power is 10000-13000w;
  • the gas film is deposited by laughing gas, the flow rate of laughing gas is 0.1-5 slm, and the plasma power is 2000-5000w.
  • the coating method includes:
  • the graphite boat is placed in a tubular PECVD coating device for drying, the drying temperature is 320-420 degrees, and the time is 20-40 min;
  • the graphite boat is again placed in the tubular PECVD coating equipment, and at least one silicon carbide film is plated on the surface of the graphite boat.
  • the coating method of the silicon carbide film is as follows:
  • Methane and silane are introduced, the methane flow rate is 3-6 slm, the silane flow rate is 300-600 sccm, and the time is 10-20 s;
  • Methane and silane are introduced, the plasma power is 5000-8000w, the time is 2-3 hours, the methane flow rate is 3-6 slm, and the silane flow rate is 300-600 sccm;
  • the processed silicon wafer is placed on a graphite boat and sent to a tubular PECVD coating device through a graphite boat to form a back composite film.
  • the coating method of the back composite film is as follows:
  • the aluminum oxide film is deposited by TMA and N 2 O.
  • the gas flow rate of TMA is 250-500 sccm, the ratio of TMA to N 2 O is 1/15-25, and the deposition temperature of the aluminum oxide film is 250-300 ° C.
  • the time is 50-300s, and the plasma power is 2000-5000w;
  • the silicon oxynitride film is deposited by silane, ammonia gas and nitrous oxide.
  • the gas flow rate of silane is 50-200 sccm, the ratio of silane to laughing gas is 1/10-80, the flow rate of ammonia gas is 0.1-5 slm, and the silicon oxynitride film is used.
  • the deposition temperature is 350-410 ° C, the time is 50-200 s, and the plasma power is 4000-6000 w;
  • the silicon nitride film is deposited by silane and ammonia gas.
  • the gas flow rate of silane is 500-1000 sccm, the ratio of silane to ammonia gas is 1/6-15, the deposition temperature of silicon nitride film is 390-410 ° C, and the time is 100- 400s, etc.
  • the ion power is 10000-13000w;
  • the gas film is deposited by laughing gas, the flow rate of laughing gas is 0.1-5 slm, and the plasma power is 2000-5000w.
  • the present invention provides a coating apparatus for a tubular PERC solar cell, comprising a heating system and a special gas cabinet, wherein the special gas cabinet is provided with a first gas line for introducing silane, and a first gas passage for introducing ammonia gas.
  • the graphite boat needs to be pretreated before or after multiple coatings. Specifically, the graphite boat is dried by a heating system, and at least one silicon carbide film is plated on the surface of the graphite boat through a special gas cabinet.
  • the silicon carbide film is not required to be inserted into the silicon wafer. Since the silicon carbide is a semiconductor, the back aluminum oxide coating has good uniformity, and the EL ratio such as the EL black edge is reduced, and the steps of the graphite boat pretreatment are reduced to Two steps of drying and silicon carbide coating save time and increase production efficiency. In addition, since the silicon carbide matrix contains a large amount of fine and fine graphite particles, the friction coefficient is very small, and has good self-lubricating properties. In the process of inserting the silicon wafer into the graphite boat, the scratch on the silicon wafer is small and large. The amplitude reduces the EL scratch ratio and improves the EL yield of the battery.
  • the invention reduces the depth of the inner side of the card slot by adjusting the diameter of the card point shaft and the diameter of the card point base, thereby reducing the gap between the silicon chip and the card point base at the card point, thereby reducing the air flow around the plate.
  • the back of the wafer significantly reduces the proportion of the footprint on the front edge of the battery.
  • the distance of the silicon wafer from the wall of the graphite boat is slightly increased when the insert is inserted, the proportion of the scratch is reduced, and the wafer is reduced.
  • the impact force with the graphite boat wall reduces the fragmentation rate.
  • the present invention provides a coating method for a tubular PERC solar cell, which requires only two steps of pretreatment (drying + silicon carbide coating) on the graphite boat before plating the back composite film, without
  • the technology requires insert film coating, which greatly reduces the consumption of silicon wafers, and also avoids the silicon wafers being greatly bent due to the surface coating being too thick, saving production time and improving production efficiency.
  • the silicon carbide matrix contains a large amount of fine and fine graphite particles, the friction coefficient is very small, and has good self-lubricating property
  • the process of inserting the silicon wafer into the graphite boat the scratch of the silicon wafer is small, the EL scratch ratio is greatly reduced, and the EL yield of the battery is improved.
  • the present invention sets the deposition temperature of silicon nitride to 390-410 ° C for 100-400 s, and can reduce silicon by shortening the time and temperature of silicon nitride deposition.
  • the curvature of the sheet reduces the proportion of the wrap.
  • the temperature window of silicon nitride deposition is very narrow, 390-410 ° C, which can minimize the winding.
  • the deposition temperature is lower than 390 ° C, the proportion of the plating is increased.
  • Figure 1 is a schematic view of a tubular PECVD apparatus
  • FIG 2 is a schematic view of the graphite boat shown in Figure 1;
  • Figure 3 is a schematic illustration of the snap point of the graphite boat of Figure 2.
  • the present invention provides a coating apparatus for a tubular PERC solar cell, comprising a wafer loading area 1, a furnace body 2, a special gas cabinet 3, a vacuum system 4, a heating system 7, a control system 5, and a graphite boat.
  • the special gas cabinet is provided with a first gas line for introducing silane, a second gas line for introducing ammonia gas, a third gas line for introducing trimethyl aluminum, and a fourth gas line leading to the laughing gas and a fifth gas line for introducing methane, the first gas line, the second gas line, the third gas line, the fourth gas line, the fifth gas
  • the pipeline is disposed inside the special gas cabinet 3, which is not shown in the drawing;
  • the graphite boat 6 is used for loading and unloading a silicon wafer.
  • the graphite boat 6 is subjected to pretreatment before or after multiple coatings.
  • the pretreatment comprises two steps: first, drying the graphite boat; The surface of the dried graphite boat is plated with at least one layer of silicon carbide film.
  • the following includes:
  • the graphite boat is placed in a tubular PECVD coating equipment for drying, the drying temperature is 300-480 ° C, and the time is 10-60 min.
  • the drying temperature is 320-420 degrees and the time is 20-50 minutes. More preferably, the drying temperature is 350-400 degrees and the time is 30-40 minutes. Optimally, the drying temperature is 370-390 degrees and the time is 32-35 minutes.
  • the purpose of drying is to remove the moisture on the graphite boat and prevent the water vapor from reducing the passivation effect of the aluminum oxide.
  • the drying temperature is set at 300-480 degrees, in order to approach the temperature of the coating process, and the coating equipment can be quickly switched between pretreatment and normal production.
  • the graphite boat is again placed in the tubular PECVD coating equipment, and at least one silicon carbide film is plated on the surface of the graphite boat; wherein the coating step of the silicon carbide film includes:
  • the temperature is raised to 380-480 ° C, ammonia gas is introduced, the plasma power is 2000-5000 W, and the flow rate is 1-8 slm.
  • the time is 2-10min, which is used to fully preheat the graphite boat;
  • Methane and silane are introduced, the flow rate of methane is 2-8slm, the flow rate of silane is 200-800sccm, and the time is 5-30s.
  • the coated tube is filled with a certain proportion of process gas to prepare for plasma coating;
  • plasma power is 3000-10000w
  • time is 1-4 hours
  • methane flow rate is 2-8slm
  • silane flow rate is 200-800sccm
  • the synergistic effect of the above various parameters can achieve the optimal pretreatment effect of the graphite boat, while saving material, saving time and improving production efficiency.
  • the method includes:
  • Methane and silane are introduced, the methane flow rate is 3-6 slm, the silane flow rate is 300-600 sccm, and the time is 10-20 s;
  • Methane and silane are introduced, the plasma power is 5000-8000w, the time is 2-3 hours, the methane flow rate is 3-6 slm, and the silane flow rate is 300-600 sccm;
  • the graphite boat is pretreated before use or after multiple coatings, including drying the graphite boat through a heating system, and plating at least one silicon carbide film on the surface of the graphite boat through the special gas cabinet.
  • the silicon carbide film is not required to be inserted into the silicon wafer. Since the silicon carbide is a semiconductor, the back aluminum oxide coating has good uniformity, and the EL ratio such as the EL black edge is reduced, and the steps of the graphite boat pretreatment are reduced to Two steps of drying and silicon carbide coating save time and increase production efficiency.
  • the silicon carbide matrix contains a large amount of fine and fine graphite particles, the friction coefficient is very small, and has good self-lubricating properties. In the process of inserting the silicon wafer into the graphite boat, the scratch on the silicon wafer is small and large. The amplitude reduces the EL scratch ratio and improves the EL yield of the battery.
  • the coating device of the tubular PERC solar cell has a simple structure, simplifies the graphite boat pretreatment step, saves the consumption of the silicon wafer, avoids scratching the silicon wafer, and improves the EL yield of the battery.
  • the graphite boat 6 is used for loading and unloading a silicon wafer
  • the graphite boat 6 includes a card point 60
  • the card point 60 includes a card point shaft 61, a card point cap 62, and a card point base 63.
  • the card point shaft 61 is mounted on the card point base 63.
  • the card point cap 62 is connected to the card point shaft 61.
  • the card point axis 61 forms a card slot 64 between the card point cap 62 and the card point base 63.
  • the depth of the card slot 64 is 0.5-1 mm.
  • the depth of the card slot 64 is h, h is preferably 0.6-0.8 mm, the diameter of the card base 63 is D, D is preferably 6-15 mm, and the angle of the bevel of the card cap 62 is ⁇ .
  • ⁇ is preferably 35-45 degrees, the thickness of the card cap 62 is a, and a is preferably 1-1.3 mm.
  • the depth h of the card point slot 644 of the graphite boat is 0.7-0.8 mm
  • the diameter D of the card point base 63 is 8-12 mm
  • the slope angle ⁇ of the card point cap 62 is 37-42 degrees
  • the card point is The thickness a of the cap 62 is 1.1 to 1.2 mm.
  • the depth h of the card slot 64 is 0.7 mm
  • the diameter D of the card point base 63 is 9 mm
  • the bevel angle ⁇ of the card cap 62 is 40 degrees
  • the thickness a of the card cap 62 is 1.2 mm.
  • the depth h of the card slot is the depth of the inside of the card slot, and mainly refers to the depth of the side where the card point axis 61 and the card point base 63 are at an angle.
  • the angle of the bevel of the card cap is ⁇ , which refers to the angle between the slope of the card cap and the vertical direction.
  • the depth h of the existing card slot is 1.75 mm
  • the diameter D of the card base is 9 mm
  • the angle ⁇ of the card cap is 30 degrees
  • the thickness a of the card cap is 1 mm.
  • the depth of the existing card slot is large, resulting in a gap between the silicon wafer and the card point base at the card point, so that there is a lot of gas around the back surface of the silicon wafer, resulting in a high proportion of the boat footprint on the front edge of the battery.
  • the angle of the card cap is small and the thickness is small, which causes the adjustment space of the automatic inserter to be small, and the proportion of scratches cannot be effectively reduced.
  • the silicon wafer is inserted into the card slot without contacting the graphite boat wall, and the silicon wafer and the graphite boat are kept at a certain distance, so as to avoid friction between the silicon wafer and the graphite boat wall. If the distance between the silicon wafer and the graphite boat is too large, the scratch ratio is small, but the silicon wafer is not easy to stick to the boat wall, and the ratio of the plating is increased.
  • the silicon wafer may not be inserted into the card slot, which may cause the film to fall off; if the distance between the silicon wafer and the graphite boat is too small, the silicon wafer is closer to the graphite boat, and the ratio of the plating is small, scratching The proportion will increase.
  • the boat footprint on the front edge of the battery corresponds to the pitting of the PECVD backside coating due to the airflow from the card point to the front side of the cell. Since the thickness of the card point base is slightly smaller than the thickness of the graphite boat piece, there is a gap between the silicon piece at the card point and the card point base. When the back film is plated, the airflow enters the gap from the lower side of the card point axis, so that the silicon is made. The front edge of the sheet forms a deposit of the film layer, i.e., produces a semi-circular boat footprint.
  • the invention reduces the depth h of the inner side of the card slot by adjusting the diameter D of the card point base and the diameter of the card point axis, thereby reducing the gap between the silicon chip and the card point base at the card point, thereby reducing the air flow around the plating.
  • the proportion of the front edge of the boat is greatly reduced.
  • the distance of the silicon wafer from the wall of the graphite boat is slightly increased, the proportion of the scratch is reduced, and the card point is increased.
  • the bevel angle of the cap reduces the impact force on the graphite boat wall when the silicon wafer slides down, reducing the debris rate.
  • the winding is generally completed by an after-the-fact remedy.
  • the alkali polishing method in the production of PERC crystalline silicon solar cells disclosed in Application No. 201510945459.3, on the front side PECVD silicon nitride plating.
  • the back surface and the edge-coated silicon nitride are etched by the belt-type transmission method, thereby solving the problems that the front surface layer is coated and the back surface passivation effect is poor.
  • the tubular PERC battery of the present invention has a back coating coated on the front side and a PN junction on the front side. If the alkali polishing method of the above patent is used, the front PN junction is destroyed.
  • the invention can avoid the occurrence of the winding plating in the production process, and substantially solves the problem of the winding plating. No additional process is required, simplifying the process and saving costs.
  • the invention is of great significance for the photovoltaic solar industry, which is extremely sensitive to cost.
  • the present invention also solves the problem of scratching.
  • the present invention also discloses a coating method for a tubular PERC solar cell, comprising:
  • the coating method includes:
  • the graphite boat is placed in a tubular PECVD coating equipment for drying, the drying temperature is 300-480 ° C, and the time is 10-60 min;
  • the graphite boat is again placed in the tubular PECVD coating equipment, and at least one silicon carbide film is plated on the surface of the graphite boat.
  • the coating method of the silicon carbide film is as follows:
  • the temperature is raised to 380-480 ° C, ammonia gas is introduced, the plasma power is 2000-5000 W, the flow rate is 1-8 slm, and the time is 2-10 min;
  • Methane and silane are introduced, the methane flow rate is 2-8 slm, the silane flow rate is 200-800 sccm, and the time is 5-30 s;
  • Methane and silane are introduced, the plasma power is 3000-10000w, the time is 1-4 hours, the methane flow rate is 2-8 slm, and the silane flow rate is 200-800 sccm;
  • the processed silicon wafer is placed on a graphite boat and sent to a tubular PECVD coating device through a graphite boat to form a back composite film.
  • the coating method of the back composite film is as follows:
  • the aluminum oxide film is deposited by TMA and N 2 O, the gas flow rate of TMA is 250-500 sccm, the ratio of TMA to N 2 O is 1/15-25, and the plasma power is 2000-5000 w;
  • Silane, ammonia and nitrous oxide are used to deposit silicon oxynitride film.
  • the gas flow rate of silane is 50-200sccm, the ratio of silane to laughing gas is 1/10-80, the flow rate of ammonia gas is 0.1-5slm, and the plasma power is 4000-. 6000w;
  • the silicon nitride film is deposited by silane and ammonia gas.
  • the gas flow rate of silane is 500-1000 sccm, the ratio of silane to ammonia gas is 1/6-15, the deposition temperature of silicon nitride is 390-410 ° C, and the time is 100-400 s. , plasma power is 10000-13000w;
  • the gas film is deposited by laughing gas, the flow rate of laughing gas is 0.1-5 slm, and the plasma power is 2000-5000w.
  • the coating method includes:
  • the graphite boat is placed in a tubular PECVD coating device for drying, the drying temperature is 320-420 degrees, and the time is 20-40 min;
  • the graphite boat is again placed in the tubular PECVD coating equipment, and at least one silicon carbide film is plated on the surface of the graphite boat.
  • the coating method of the silicon carbide film is as follows:
  • Methane and silane are introduced, the methane flow rate is 3-6 slm, the silane flow rate is 300-600 sccm, and the time is 10-20 s;
  • Methane and silane are introduced, the plasma power is 5000-8000w, the time is 2-3 hours, the methane flow rate is 3-6 slm, and the silane flow rate is 300-600 sccm;
  • the processed silicon wafer is placed on a graphite boat and sent to a tubular PECVD coating device through a graphite boat to form a back composite film.
  • the coating method of the back composite film is as follows:
  • the aluminum oxide film is deposited by TMA and N 2 O.
  • the gas flow rate of TMA is 250-500 sccm, the ratio of TMA to N 2 O is 1/15-25, and the deposition temperature of the aluminum oxide film is 250-300 ° C.
  • the time is 50-300s, and the plasma power is 2000-5000w;
  • the silicon oxynitride film is deposited by silane, ammonia gas and nitrous oxide.
  • the gas flow rate of silane is 50-200 sccm, the ratio of silane to laughing gas is 1/10-80, the flow rate of ammonia gas is 0.1-5 slm, and the silicon oxynitride film is used.
  • the deposition temperature is 350-410 ° C, the time is 50-200 s, and the plasma power is 4000-6000 w;
  • the silicon nitride film is deposited by silane and ammonia gas.
  • the gas flow rate of silane is 500-1000 sccm, the ratio of silane to ammonia gas is 1/6-15, the deposition temperature of silicon nitride film is 390-410 ° C, and the time is 100- 400s, plasma power is 10000-13000w;
  • the gas film is deposited by laughing gas, the flow rate of laughing gas is 0.1-5 slm, and the plasma power is 2000-5000w.
  • the wire coating occurs primarily in the deposition phase of silicon nitride. Since silicon nitride is on the outer layer of the back surface composite film, as the deposition time increases, the film layer on the surface of the silicon wafer is thickened, and the silicon wafer is bent, and silane and ammonia gas are more easily applied to the front edge of the battery. By shortening the time and temperature of silicon nitride deposition, the curvature of the silicon wafer can be reduced and the ratio of the winding can be reduced. Further experiments have shown that the temperature window of silicon nitride deposition is very narrow, 390-410 degrees, and when the temperature is further lowered, the proportion of the plating is increased.
  • the plasma power is set to 2000-5000w; when the silicon oxynitride film is deposited, the plasma power is set to 4000-6000w; when the silicon nitride film is deposited, the plasma power is set to 10000-13000w; deposition In the case of a silicon dioxide film, the plasma power is set to 2000-5000w. Ensure that different layers have better deposition rates and improve deposition uniformity.
  • the coating method of the tubular PERC solar cell can simplify the graphite boat pretreatment step, save the consumption of the silicon wafer, avoid scratching the silicon wafer, reduce the EL defect such as the EL black edge, and improve the EL yield of the battery. .
  • the graphite boat is placed in a tubular PECVD coating equipment for drying, the drying temperature is 300 degrees, and the time is 20 minutes;
  • the graphite boat is again placed in the tubular PECVD coating equipment, and at least one silicon carbide film is plated on the surface of the graphite boat.
  • the coating method of the silicon carbide film is as follows:
  • the temperature is raised to 380 ° C, ammonia gas is introduced, the plasma power is 2000 W, the flow rate is 1 slm, and the time is 2 min;
  • Methane and silane are introduced, the methane flow rate is 2 slm, the silane flow rate is 200 sccm, and the time is 5 s;
  • Methane and silane are introduced, the plasma power is 3000w, the time is 1 hour, the methane flow rate is 2slm, and the silane flow rate is 200sccm;
  • the processed silicon wafer is placed on a graphite boat and sent to a tubular PECVD coating device through a graphite boat to form a back composite film.
  • the coating method of the back composite film is as follows:
  • Aluminium oxide film is deposited by TMA and N 2 O.
  • the gas flow rate of TMA is 250 sccm, the ratio of TMA to N 2 O is 1/15, the deposition temperature of aluminum oxide film is 250 ° C, the time is 50 s, plasma power For 2000w;
  • the silicon oxynitride film was deposited by silane, ammonia gas and nitrous oxide.
  • the gas flow rate of silane was 50 sccm, the ratio of silane to laughing gas was 1/10, the flow rate of ammonia gas was 0.1 slm, and the deposition temperature of silicon oxynitride film was 350 °C. , the time is 50s, the plasma power is 4000w;
  • the silicon nitride film is deposited by using silane and ammonia gas, the gas flow rate of silane is 500 sccm, the ratio of silane to ammonia gas is 1/6, the deposition temperature of silicon nitride film is 390 ° C, the time is 100 s, and the plasma power is 10000 w;
  • the silica film was deposited by laughing gas, the flow rate of laughing gas was 0.1 slm, and the plasma power was 2000 w.
  • the graphite boat is placed in a tubular PECVD coating equipment for drying, the drying temperature is 350 degrees, and the time is 25 minutes;
  • the graphite boat is again placed in the tubular PECVD coating equipment, and at least one silicon carbide film is plated on the surface of the graphite boat.
  • the coating method of the silicon carbide film is as follows:
  • the temperature is raised to 400 ° C, ammonia gas is introduced, the plasma power is 3000 W, the flow rate is 2 slm, and the time is 3 min;
  • Methane and silane are introduced, the methane flow rate is 4 slm, the silane flow rate is 400 sccm, and the time is 10 s;
  • Methane and silane are introduced, the plasma power is 5000w, the time is 2 hours, the methane flow rate is 3slm, and the silane flow rate is 300sccm;
  • the processed silicon wafer is placed on a graphite boat and sent to a tubular PECVD coating device through a graphite boat to form a back composite film.
  • the coating method of the back composite film is as follows:
  • Aluminium oxide film is deposited by TMA and N 2 O.
  • the gas flow rate of TMA is 300 sccm, the ratio of TMA to N 2 O is 1/18, the deposition temperature of aluminum oxide film is 260 ° C, the time is 80 s, plasma power 2500w;
  • the silicon oxynitride film is deposited by silane, ammonia gas and nitrous oxide.
  • the gas flow rate of silane is 80 sccm, the ratio of silane to laughing gas is 1/20, the flow rate of ammonia gas is 1 slm, and the deposition temperature of silicon oxynitride film is 360 °C.
  • the time is 100s and the plasma power is 4500b;
  • the silicon nitride film is deposited by using silane and ammonia gas, the gas flow rate of the silane is 600 sccm, the ratio of silane to ammonia is 1/8, the deposition temperature of the silicon nitride film is 395 ° C, the time is 150 s, and the plasma power is 10000 w;
  • the silica film was deposited by laughing gas, the flow rate of laughing gas was 1 slm, and the plasma power was 2500w.
  • the graphite boat is placed in a tubular PECVD coating equipment for drying, the drying temperature is 370 degrees, and the time is 30 minutes;
  • the graphite boat is again placed in the tubular PECVD coating equipment, and at least one silicon carbide film is plated on the surface of the graphite boat.
  • the coating method of the silicon carbide film is as follows:
  • the temperature is raised to 420 ° C, ammonia gas is introduced, the plasma power is 4000 W, the flow rate is 5 slm, and the time is 5 min;
  • Methane and silane are introduced, the methane flow rate is 5 slm, the silane flow rate is 500 sccm, and the time is 15 s;
  • Methane and silane are introduced, the plasma power is 6000w, the time is 1.5 hours, the methane flow rate is 4slm, and the silane flow rate is 500sccm;
  • the processed silicon wafer is placed on a graphite boat and sent to a tubular PECVD coating device through a graphite boat to form a back composite film.
  • the coating method of the back composite film is as follows:
  • Aluminium oxide film is deposited by TMA and N 2 O.
  • the gas flow rate of TMA is 350sccm, the ratio of TMA to N 2 O is 1/22, the deposition temperature of aluminum oxide film is 280 ° C, the time is 150s, plasma power Is 3500w;
  • the silicon oxynitride film was deposited by silane, ammonia gas and nitrous oxide.
  • the gas flow rate of silane was 180 sccm, the ratio of silane to laughing gas was 1/40, the flow rate of ammonia gas was 3 slm, and the deposition temperature of silicon oxynitride film was 380 °C.
  • the time is 150s and the plasma power is 5000w;
  • the silicon nitride film is deposited by using silane and ammonia gas, the gas flow rate of the silane is 800 sccm, the ratio of the silane to the ammonia gas is 1/10, the deposition temperature of the silicon nitride film is 405 ° C, the time is 300 s, and the plasma power is 12000 w;
  • the silica film was deposited by laughing gas, the flow rate of laughing gas was 4 slm, and the plasma power was 4000 W.
  • the graphite boat is placed in a tubular PECVD coating equipment for drying, the drying temperature is 400 degrees, and the time is 35 minutes;
  • the graphite boat is again placed in the tubular PECVD coating equipment, and at least one silicon carbide film is plated on the surface of the graphite boat.
  • the coating method of the silicon carbide film is as follows:
  • the temperature is raised to 450 ° C, ammonia gas is introduced, the plasma power is 4000 W, the flow rate is 6 slm, and the time is 8 min;
  • Methane and silane are introduced, the methane flow rate is 6 slm, the silane flow rate is 500 sccm, and the time is 20 s;
  • the processed silicon wafer is placed on a graphite boat and sent to a tubular PECVD coating device through a graphite boat to form a back composite film.
  • the coating method of the back composite film is as follows:
  • Aluminium oxide film is deposited by TMA and N 2 O.
  • the gas flow rate of TMA is 400 sccm, the ratio of TMA to N 2 O is 1/20, the deposition temperature of aluminum oxide film is 280 ° C, the time is 250 s, plasma power Is 4500w;
  • the silicon oxynitride film was deposited by silane, ammonia gas and nitrous oxide.
  • the gas flow rate of silane was 180 sccm, the ratio of silane to laughing gas was 1/60, the flow rate of ammonia gas was 4 slm, and the deposition temperature of silicon oxynitride film was 400 °C.
  • the time is 180s and the plasma power is 5500w;
  • the silicon nitride film is deposited by using silane and ammonia gas, the gas flow rate of the silane is 900 sccm, the ratio of silane to ammonia is 1/14, the deposition temperature of the silicon nitride film is 400 ° C, the time is 300 s, and the plasma power is 13000 w;
  • the silica film was deposited by laughing gas, the flow rate of laughing gas was 4 slm, and the plasma power was 4000 W.
  • the graphite boat is placed in a tubular PECVD coating equipment for drying, the drying temperature is 420 degrees, and the time is 30 minutes;
  • the graphite boat is again placed in the tubular PECVD coating equipment, and at least one silicon carbide film is plated on the surface of the graphite boat.
  • the coating method of the silicon carbide film is as follows:
  • the temperature is raised to 480 ° C, ammonia gas is introduced, the plasma power is 5000 W, the flow rate is 8 slm, and the time is 10 min;
  • Methane and silane are introduced, the methane flow rate is 8 slm, the silane flow rate is 800 sccm, and the time is 30 s;
  • the plasma power is 10000w
  • the time is 1 hour
  • the methane flow rate is 8slm
  • the silane flow rate is 800sccm
  • the processed silicon wafer is placed on a graphite boat and sent to a tubular PECVD coating device through a graphite boat to form a back composite film.
  • the coating method of the back composite film is as follows:
  • Aluminium oxide film is deposited by TMA and N 2 O.
  • the gas flow rate of TMA is 500 sccm, the ratio of TMA to N 2 O is 1/25, the deposition temperature of the aluminum oxide film is 300 ° C, the time is 300 s, plasma power 5000w;
  • the silicon oxynitride film was deposited by silane, ammonia gas and nitrous oxide.
  • the gas flow rate of silane was 200 sccm
  • the ratio of silane to laughing gas was 1/80
  • the flow rate of ammonia gas was 5 slm
  • the deposition temperature of silicon oxynitride film was 410 °C.
  • the time is 200s and the plasma power is 6000w;
  • the silicon nitride film is deposited by using silane and ammonia gas, the gas flow rate of silane is 1000 sccm, the ratio of silane to ammonia gas is 1/15, the deposition temperature of silicon nitride film is 410 ° C, the time is 400 s, and the plasma power is 13000 w;
  • the silica film was deposited by laughing gas, the flow rate of laughing gas was 5 slm, and the plasma power was 5000 w.
  • the present invention provides a coating apparatus for a tubular PERC solar cell, comprising a heating system and a special gas cabinet, wherein the special gas cabinet is provided with a first gas line for introducing silane, and a first gas passage for introducing ammonia gas.
  • the graphite boat needs to be pretreated before or after multiple coatings. Specifically, the graphite boat is dried by a heating system, and at least one silicon carbide film is plated on the surface of the graphite boat through a special gas cabinet.
  • the silicon carbide film is not inserted into the silicon wafer. Since the silicon carbide is a semiconductor, the back aluminum oxide coating has good uniformity, and the step of pretreating the graphite boat is reduced to two steps of drying and silicon carbide coating. Save time and increase production efficiency. In addition, since the silicon carbide matrix contains a large amount of fine and fine graphite particles, the friction coefficient is very small, and has good self-lubricating properties. In the process of inserting the silicon wafer into the graphite boat, the scratch on the silicon wafer is small and large. The amplitude reduces the EL scratch ratio and improves the EL yield of the battery.
  • the invention reduces the depth of the inner side of the card slot by adjusting the diameter of the card point shaft and the diameter of the card point base, thereby reducing the gap between the silicon chip and the card point base at the card point, thereby reducing the air flow around the plate.
  • the back of the wafer significantly reduces the proportion of the footprint on the front edge of the battery.
  • the angle of the beveled face of the card cap and the thickness of the card cap are adjusted by the automatic inserter to slightly increase the distance of the silicon wafer from the graphite boat wall when the insert is inserted, thereby reducing the proportion of scratches and reducing the sliding of the silicon wafer with the graphite boat wall.
  • the impact force reduces the fragmentation rate.
  • the present invention provides a coating method for a tubular PERC solar cell, which requires only two steps of pretreatment (drying + silicon carbide coating) on the graphite boat before plating the back composite film, without
  • the technology requires insert film coating, which greatly reduces the consumption of silicon wafers, and also avoids the silicon wafers being greatly bent due to the surface coating being too thick, saving production time and improving production efficiency.
  • the silicon carbide matrix contains a large amount of fine and fine graphite particles, the friction coefficient is very small, and has good self-lubricating property
  • the process of inserting the silicon wafer into the graphite boat the scratch of the silicon wafer is small, the EL scratch ratio is greatly reduced, and the EL yield of the battery is improved.
  • the present invention sets the deposition temperature of silicon nitride to 390-410 ° C for 100-400 s, and can shorten the bending of the silicon wafer by shortening the time and temperature of silicon nitride deposition. Degree, reducing the proportion of the plating.
  • the temperature window of silicon nitride deposition is very narrow, 390-410 ° C, which can minimize the winding. However, when the deposition temperature is lower than 390 ° C, the proportion of the plating is increased.

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Abstract

一种管式PERC太阳能电池的镀膜设备，包括晶片装载区（1）、炉体（2）、特气柜（3）、真空系统（4）、加热系统（7）、控制系统（5）以及石墨舟（6），特气柜（3）设有用于通入硅烷的第一气体管路、用于通入氨气的第二气体管路、用于通入三甲基铝的第三气体管路、用于通入笑气的第四气体管路以及用于通入甲烷的第五气体管路；石墨舟（6）用于装卸硅片，石墨舟（6）在使用之前或经过多次镀膜之后需经预处理，预处理包括：将石墨舟（6）烘干；在烘干后的石墨舟（6）的表面，镀至少一层碳化硅膜。该申请还公开了一种管式PERC太阳能电池的镀膜方法。采用该方法，简化石墨舟预处理步骤，节省硅片的消耗，并避免对硅片的划伤，提高了电池的EL良率。

Description

管式PERC太阳能电池的镀膜设备及镀膜方法 技术领域
本发明涉及PERC太阳能电池领域，尤其涉及一种管式PERC太阳能电池的镀膜设备，以及一种管式PERC太阳能电池的镀膜方法。
背景技术
随着对晶硅电池的光电转换效率的要求越来越高，人们开始研究背钝化太阳电池技术。目前主流的做法是采用板式PECVD来对背面镀膜，板式PECVD由不同的腔室组成，每个腔室镀一层膜，一旦设备固定，复合膜的层数就已经固定，因此板式PECVD的缺点是不能灵活调节复合膜的组合，不能更好的优化背面膜的钝化效果，从而限制电池的光电转换效率。同时，板式PECVD使用的是间接等离子法，膜层的钝化效果不太理想。板式PECVD还具有uptime低，维护时间长的缺点，影响产能和产量。
本发明采用管式PECVD技术在硅片背面沉积复合膜，制作PERC高效太阳能电池。由于管式PECVD技术采用的是直接等离子法，又可以灵活调节复合膜的组合和成分，膜层的钝化效果好，能大幅提升PERC太阳能电池的光电转换效率。管式PECVD技术的优秀钝化性能和工艺的灵活性还可以相对降低三氧化二铝膜层的厚度，减少TMA的耗量，同时，管式PERC技术容易维护，uptime高。综合以上多种因素，与板式PECVD技术相比，管式PECVD技术制作高效PERC电池有显著的综合成本优势。
尽管如此，管式PECVD技术由于存在硅片划伤的问题，外观良率和EL良率一直比较低，尤其EL划痕的比例很高，影响该技术的大规模量产。
管式PECVD镀膜设备是通过将硅片插入石墨舟，再将石墨舟送入石英管做镀膜沉积。石墨舟通过3个卡点将硅片固定在石墨舟壁上，硅片的一面与石墨舟壁接触，在硅片的另外一面上沉积膜层。为了保证镀膜的均匀性，硅片要贴紧石墨舟壁，因此，卡点槽的宽度设置较小，约为0.25mm。在插片过程中，硅片会与石墨舟壁发生摩擦，导致硅片挨着石墨舟壁的一面产生划伤。
用管式PECVD做常规太阳能电池的正面镀膜，划伤对成品电池不会产生不良影响，原因在于，硅片背面没有PN结和镀膜，划痕不会影响电池的电性能和EL良率。
但是，用管式PECVD制作PERC电池的背面膜，划伤严重影响成品电池的合格率，问题在于：，插片到石墨舟的过程中，硅片的正面会接触石墨舟壁，正面PN结被划伤，导致EL测试出现划痕，影响电池的电性能。
对于同一个石墨舟，在使用之前、以及在镀膜一定的次数之后，需要对石墨舟进行清洗和预处理，才能保证良好的镀膜效果。一般的预处理方法是在石墨舟表面镀一层薄的氮化硅，目的是减少后续硅片镀膜过程中石墨舟对镀膜的吸收，以保证硅片上镀膜的厚度和品质。
对于管式PERC太阳能电池的背面镀膜，石墨舟的常规预处理工艺一般需要烘干、插片镀氮化硅和空舟镀氮化硅三个步骤。插片镀氮化硅的镀膜时间较长，插片是为了防止石墨舟与硅片接触的位置镀膜太厚，影响背面三氧化二铝的沉积，从而影响电池的EL良率和光电转换效率。空舟镀氮化硅的时间很短，目的是对石墨舟的卡点镀一层薄的氮化硅，减少硅片对卡点的损坏，起保护卡点的作用，从而减少硅片的崩边缺口，降低硅片的碎片率和外观不良率。
但是，氮化硅的电阻率很高，影响背面三氧化二铝镀膜的均匀性，EL测试会产生边角黑边、卡点黑边等，影响电池的EL良率，生产中还发现，有EL黑边的电池转换效率明显要低。插片镀氮化硅，硅片的消耗很大，因为插片镀膜的时间很长，硅片因为表面镀膜太厚会发生很大的弯曲，导致镀膜工艺中断，需要重新补镀，占用生产时间。用一些不合格片，弯曲程度更大，因此插片镀舟的硅片不能太差，这样就严重消耗硅片，成本高。
发明内容
本发明所要解决的技术问题在于，提供一种管式PERC太阳能电池的镀膜设备，结构简单，简化石墨舟预处理步骤，节省硅片的消耗，并避免对硅片的划伤，提高了电池的EL良率。
本发明所要解决的技术问题在于，提供一种管式PERC太阳能电池的镀膜方法，简化石墨舟预处理步骤，节省硅片的消耗，并避免对硅片的划伤，提高了电池的EL良率。
为了解决上述技术问题，本发明提供了一种管式PERC太阳能电池的镀膜设备，包括晶片装载区、炉体、特气柜、真空系统、加热系统、控制系统以及石墨舟，所述特气柜设有用于通入硅烷的第一气体管路、用于通入氨气的第二气体管路、用于通入三甲基铝的第三气体管路、用于通入笑气的第四气体管路以及用于通入甲烷的第五气体管路；
所述石墨舟用于装卸硅片，所述石墨舟在使用之前或经过多次镀膜之后需经预处理，所述预处理包括：
将石墨舟烘干；
在烘干后的石墨舟的表面，镀至少一层碳化硅膜。
作为上述技术方案的改进，所述预处理包括：
将石墨舟放入管式PECVD镀膜设备进行烘干，烘干温度为300-480℃，时间为10-60min；
烘干出舟后，将石墨舟再次放入管式PECVD镀膜设备，在石墨舟的表面镀至少一层碳化硅膜。
作为上述技术方案的改进，碳化硅膜的镀膜步骤包括：
升温到380-480℃，通入氨气，等离子功率为2000-5000w，流量为1-8slm，时间为2-10min；
通入甲烷和硅烷，甲烷流量为2-8slm，硅烷流量为200-800sccm，时间为5-30s；
通入甲烷和硅烷，等离子功率为3000-10000w，时间为1-4小时，甲烷流量为2-8slm，硅烷流量为200-800sccm；
降温至350-400℃，出舟。
作为上述技术方案的改进，碳化硅膜的镀膜步骤包括：
升温到400-460℃，通入氨气，等离子功率为3000-4000w，流量为2-6slm，时间为3-8min；
通入甲烷和硅烷，甲烷流量为3-6slm，硅烷流量为300-600sccm，时间为10-20s；
通入甲烷和硅烷，等离子功率为5000-8000w，时间为2-3小时，甲烷流量为3-6slm，硅烷流量为300-600sccm；
降温至370-390℃，出舟。
作为上述技术方案的改进，所述石墨舟包括卡点，所述卡点包括卡点轴、卡点帽和卡点底座，所述卡点轴安装在卡点底座上，所述卡点帽与卡点轴连接，所述卡点轴与卡点帽、卡点底座之间形成卡点槽，卡点槽的深度为0.5-1mm。
作为上述技术方案的改进，所述石墨舟的卡点槽的深度为0.6-0.8mm，卡点底座的直径为6-15mm，卡点帽的斜面角度为35-45度，卡点帽的厚度为1-1.3mm。
作为上述技术方案的改进，所述石墨舟的卡点槽的深度为0.7-0.8mm，卡点底座的直径为8-12mm，卡点帽的斜面角度为37-42度，卡点帽的厚度为1.1-1.2mm。
相应的，本发明还公开一种管式PERC太阳能电池的镀膜方法，包括：
(1)将石墨舟烘干；
(2)在烘干后的石墨舟的表面，镀至少一层碳化硅膜；
(3)把经过处理后的硅片放置在石墨舟上，通过石墨舟送入管式PECVD镀膜设备，在硅片的表面形成背面复合膜，所述背面复合膜包括三氧化二铝膜、二氧化硅膜、氮氧化硅膜和氮化硅膜。
作为上述方案的改进，镀膜方法包括：
(1)将石墨舟放入管式PECVD镀膜设备进行烘干，烘干温度为300-480℃，时间为10-60min；
(2)烘干出舟后，将石墨舟再次放入管式PECVD镀膜设备，在石墨舟的表面镀至少一层碳化硅膜，其中，碳化硅膜的镀膜方法如下：
升温到380-480℃，通入氨气，等离子功率为2000-5000w，流量为1-8slm，时间为2-10min；
通入甲烷和硅烷，甲烷流量为2-8slm，硅烷流量为200-800sccm，时间为5-30s；
通入甲烷和硅烷，等离子功率为3000-10000w，时间为1-4小时，甲烷流量为2-8slm，硅烷流量为200-800sccm；
降温至350-400℃，出舟；
(3)把经过处理后的硅片放置在石墨舟上，通过石墨舟送入管式PECVD镀膜设备，形成背面复合膜，其中，背面复合膜的镀膜方法如下：
采用TMA与N2O沉积三氧化二铝膜，TMA的气体流量为250-500sccm，TMA与N2O的比例为1/15-25，等离子功率为2000-5000w；
采用硅烷、氨气和笑气沉积氮氧化硅膜，硅烷的气体流量为50-200sccm，硅烷与笑气的比例为1/10-80，氨气的流量为0.1-5slm，等离子功率为4000-6000w；
采用硅烷和氨气沉积氮化硅膜，硅烷的气体流量为500-1000sccm，硅烷与氨气的比例为1/6-15，氮化硅的沉积温度为390-410℃，时间为100-400s，等离子功率为10000-13000w；
采用笑气沉积二氧化硅膜，笑气的流量为0.1-5slm，等离子功率为2000-5000w。
作为上述方案的改进，镀膜方法包括：
(1)将石墨舟放入管式PECVD镀膜设备进行烘干，烘干温度为320-420度，时间为20-40min；
(2)烘干出舟后，将石墨舟再次放入管式PECVD镀膜设备，在石墨舟的表面镀至少一层碳化硅膜，其中，碳化硅膜的镀膜方法如下：
升温到400-460℃，通入氨气，等离子功率为3000-4000w，流量为2-6slm，时间为3-8min；
通入甲烷和硅烷，甲烷流量为3-6slm，硅烷流量为300-600sccm，时间为10-20s；
通入甲烷和硅烷，等离子功率为5000-8000w，时间为2-3小时，甲烷流量为3-6slm，硅烷流量为300-600sccm；
降温至370-390℃，出舟；
(3)把经过处理后的硅片放置在石墨舟上，通过石墨舟送入管式PECVD镀膜设备，形成背面复合膜，其中，背面复合膜的镀膜方法如下：
采用TMA与N2O沉积三氧化二铝膜，TMA的气体流量为250-500sccm，TMA与N2O的比例为1/15-25，三氧化二铝膜的沉积温度为250-300℃，时间为50-300s，等离子功率为2000-5000w；
采用硅烷、氨气和笑气沉积氮氧化硅膜，硅烷的气体流量为50-200sccm，硅烷与笑气的比例为1/10-80，氨气的流量为0.1-5slm，氮氧化硅膜的沉积温度为350-410℃，时间为50-200s，等离子功率为4000-6000w；
采用硅烷和氨气沉积氮化硅膜，硅烷的气体流量为500-1000sccm，硅烷与氨气的比例为1/6-15，氮化硅膜的沉积温度为390-410℃，时间为100-400s，等 离子功率为10000-13000w；
采用笑气沉积二氧化硅膜，笑气的流量为0.1-5slm，等离子功率为2000-5000w。
实施本发明，具有如下有益效果：
一，本发明提供了一种管式PERC太阳能电池的镀膜设备，包括加热系统和特气柜，其中特气柜设有用于通入硅烷的第一气体管路、用于通入氨气的第二气体管路、用于通入三甲基铝的第三气体管路、用于通入笑气的第四气体管路以及用于通入甲烷的第五气体管路。石墨舟在使用之前或经过多次镀膜之后需经预处理，具体的，通过加热系统对石墨舟进行烘干处理，通过特气柜在石墨舟的表面镀至少一层碳化硅膜。对石墨舟镀碳化硅膜，不需要插硅片，由于碳化硅是半导体，背面三氧化二铝镀膜具有良好的均匀性，减少了EL黑边等EL不良比例，石墨舟预处理的步骤减少到烘干和碳化硅镀膜两个步骤，节约时间，提高生产效率。另外，由于在碳化硅基体中含有大量的弥散细小的石墨颗粒，其摩擦系数非常小，具有良好的自润滑性能，在插硅片到石墨舟的过程中，对硅片的划伤小，大幅度降低了EL划伤比例，提高了电池的EL良率。
进一步，本发明通过调节卡点轴直径和卡点底座直径的大小，减少卡点槽内侧的深度，从而减小卡点处硅片与卡点底座之间的缝隙大小，进而减少气流绕镀到硅片背面，大幅降低电池正面边缘舟齿印的比例。而且，通过适当增加卡点帽斜面的角度和卡点帽的厚度，通过调整自动插片机，略微增加插片时硅片离石墨舟壁的距离，降低划伤的比例，同时减少硅片滑落时跟石墨舟壁的撞击力，降低碎片率。
二，本发明提供了一种管式PERC太阳能电池的镀膜方法，其在镀背面复合膜之前，只需要对石墨舟进行两个步骤的预处理(烘干+碳化硅镀膜)，无需像现有技术那样需要插片镀膜，大大减少了硅片的消耗，也避免硅片因为表面镀膜太厚而发生很大的弯曲，节省生产时间，提高生产效率。而且，镀碳化硅膜的过程中，由于在碳化硅基体中含有大量的弥散细小的石墨颗粒，其摩擦系数非常小，具有良好的自润滑性能，在插硅片到石墨舟的过程中，对硅片的划伤小，大幅度降低了EL划伤比例，提高了电池的EL良率。
进一步，在镀背面复合膜的过程中，本发明设定氮化硅的沉积温度为390-410℃，时间为100-400s，通过缩短氮化硅沉积的时间和温度，可以降低硅 片的弯曲度，减少绕镀的比例。氮化硅沉积的温度窗口很窄，为390-410℃，可以最大程度减少绕镀。但，当沉积温度低于390℃，绕镀的比例却上升。
附图说明
图1是管式PECVD设备的示意图；
图2是图1所示石墨舟的示意图；
图3是图2所示石墨舟的卡点的示意图。
具体实施方式
为使本发明的目的、技术方案和优点更加清楚，下面将结合附图对本发明作进一步地详细描述。
如图1所示，本发明提供了一种管式PERC太阳能电池的镀膜设备，包括晶片装载区1、炉体2、特气柜3、真空系统4、加热系统7、控制系统5以及石墨舟6，所述特气柜设有用于通入硅烷的第一气体管路、用于通入氨气的第二气体管路、用于通入三甲基铝的第三气体管路、用于通入笑气的第四气体管路以及用于通入甲烷的第五气体管路，第一气体管路、第二气体管路、第三气体管路、第四气体管路、第五气体管路设于特气柜3的内部，于图中未示出；
所述石墨舟6用于装卸硅片，所述石墨舟6在使用之前或经过多次镀膜之后需经预处理，所述预处理包括两个步骤：一、将石墨舟烘干；二、在烘干后的石墨舟的表面，镀至少一层碳化硅膜。
作为预处理的优选实施方式，包括：
一、将石墨舟放入管式PECVD镀膜设备进行烘干，烘干温度为300-480℃，时间为10-60min。优选的，烘干温度为320-420度，时间为20-50min。更佳的，烘干温度为350-400度，时间为30-40min。最佳的，烘干温度为370-390度，时间为32-35min。烘干的目的是去除石墨舟上的水分，避免水汽降低三氧化二铝的钝化效果。烘干温度设置在300-480度，是为了接近镀膜工艺的温度，方便镀膜设备可以在预处理和正常生产之间快速切换。
二、烘干出舟后，将石墨舟再次放入管式PECVD镀膜设备，在石墨舟的表面镀至少一层碳化硅膜；其中，碳化硅膜的镀膜步骤包括：
升温到380-480℃，通入氨气，等离子功率为2000-5000w，流量为1-8slm， 时间为2-10min，用于对石墨舟进行充分预热；
通入甲烷和硅烷，甲烷流量为2-8slm，硅烷流量为200-800sccm，时间为5-30s，镀膜管内充满一定比例的工艺气体，为等离子镀膜做准备；
通入甲烷和硅烷进行等离子镀膜，等离子功率为3000-10000w，时间为1-4小时，甲烷流量为2-8slm，硅烷流量为200-800sccm；
降温至350-400℃，出舟。
在碳化硅膜的镀膜步骤中，通过上述各项参数的协同作用，可以达到石墨舟的最佳预处理效果，同时兼顾节约材料，节约时间，提高生产效率。
作为碳化硅膜镀膜的优选实施方式，包括：
升温到400-460℃，通入氨气，等离子功率为3000-4000w，流量为2-6slm，时间为3-8min；
通入甲烷和硅烷，甲烷流量为3-6slm，硅烷流量为300-600sccm，时间为10-20s；
通入甲烷和硅烷，等离子功率为5000-8000w，时间为2-3小时，甲烷流量为3-6slm，硅烷流量为300-600sccm；
降温至370-390℃，出舟。
石墨舟在使用之前或经过多次镀膜之后需经预处理，包括通过加热系统对石墨舟进行烘干处理，通过特气柜在石墨舟的表面镀至少一层碳化硅膜。对石墨舟镀碳化硅膜，不需要插硅片，由于碳化硅是半导体，背面三氧化二铝镀膜具有良好的均匀性，减少了EL黑边等EL不良比例，石墨舟预处理的步骤减少到烘干和碳化硅镀膜两个步骤，节约时间，提高生产效率。另外，由于在碳化硅基体中含有大量的弥散细小的石墨颗粒，其摩擦系数非常小，具有良好的自润滑性能，在插硅片到石墨舟的过程中，对硅片的划伤小，大幅度降低了EL划伤比例，提高了电池的EL良率。
因此，所述管式PERC太阳能电池的镀膜设备结构简单，简化石墨舟预处理步骤，节省硅片的消耗，并避免对硅片的划伤，提高了电池的EL良率。
如图2和3所示，所述石墨舟6用于装卸硅片，所述石墨舟6包括卡点60，所述卡点60包括卡点轴61、卡点帽62和卡点底座63，所述卡点轴61安装在卡点底座63上，所述卡点帽62与卡点轴61连接，所述卡点轴61与卡点帽62、卡点底座63之间形成卡点槽64，所述卡点槽64的深度为0.5-1mm。
如图3所示，所述卡点槽64的深度为h，h优选为0.6-0.8mm，卡点底座63的直径为D，D优选为6-15mm，卡点帽62的斜面角度为α，α优选为35-45度，卡点帽62的厚度为a，a优选为1-1.3mm。
更佳的，所述石墨舟的卡点槽644的深度h为0.7-0.8mm，卡点底座63的直径D为8-12mm，卡点帽62的斜面角度α为37-42度，卡点帽62的厚度a为1.1-1.2mm。
最佳的，所述卡点槽64的深度h为0.7mm，卡点底座63的直径D为9mm，卡点帽62的斜面角度α为40度，卡点帽62的厚度a为1.2mm。
需要说明的是，所述卡点槽的深度h是指卡点槽内侧的深度，主要是指卡点轴61与卡点底座63所成夹角的一侧的深度。卡点槽的深度h＝(卡点底座直径-卡点轴直径)/2。卡点帽的斜面角度为α,是指卡点帽的斜面与竖直方向的夹角。
现有的卡点槽的深度h为1.75mm，卡点底座的直径D为9mm，卡点帽的斜面角度α为30度，卡点帽的厚度a为1mm。现有卡点槽的深度大，导致卡点处硅片与卡点底座的缝隙过大，从而绕镀到硅片背面的气体多，造成电池正面边缘的舟齿印比例很高。卡点帽的角度小、厚度小，导致自动插片机的调整空间小，划伤的比例不能有效降低。
对于管式PECVD做背膜沉积，划伤和绕镀是一对矛盾。通过调节自动插片机，让硅片在不接触石墨舟壁、硅片与石墨舟保持一定的距离的状态下插入卡点槽，避免硅片与石墨舟壁发生摩擦。如果硅片与石墨舟片的距离过大，划伤比例少，但是硅片就不容易贴紧舟壁，绕镀比例就会增加。如果距离太大，硅片有可能不能插入卡点槽，产生掉片的可能；如果硅片与石墨舟片的距离过小，硅片更贴紧石墨舟片，绕镀的比例小，划伤的比例就会增加。
电池正面边缘的舟齿印与PECVD背面镀膜的卡点相对应，是由于气流从卡点处绕镀到电池正面而形成。由于卡点底座的厚度略小于石墨舟片的厚度，导致卡点处的硅片与卡点底座之间存在缝隙，在镀背膜时，气流从卡点轴的下方两侧进入缝隙，使硅片的正面边缘形成膜层的沉积，即产生半圆形的舟齿印。
本发明通过调节卡点底座直径D和卡点轴直径的大小，减少卡点槽内侧的深度h，从而减小卡点处硅片与卡点底座之间的缝隙大小，进而减少气流绕镀到硅片背面，大幅降低正面边缘舟齿印的比例。
通过调整自动插片机，当硅片插入石墨舟中一定的位置，吸盘释放真空，硅片掉入卡点帽的斜面α上，依靠重力，硅片从斜面滑落至贴紧石墨舟壁。这 种无接触的插片方式，用来降低硅片的划伤比例。
本发明通过适当增加卡点帽斜面的角度α和卡点帽的厚度a，通过调整自动插片机，略微增加插片时硅片离石墨舟壁的距离，降低划伤的比例，增加卡点帽的斜面角度减少硅片滑落时跟石墨舟壁的撞击力，降低碎片率。
需要说明的是，现有技术中，对绕镀一般都是通过事后的补救来完成的，例如申请号：201510945459.3公开的PERC晶体硅太阳能电池生产中的碱抛光方法，在正面PECVD镀氮化硅膜工序后，利用带式传动方式刻蚀去除背表面及边缘绕镀氮化硅，解决了目前正面膜层绕镀导致背表面钝化效果不佳等问题。然而，本发明管式PERC电池是背面镀膜绕镀到正面，正面有PN结，如果采用以上专利的碱抛光方式，会破坏正面的PN结。本发明通过调整镀膜工艺和镀膜结构，使得在生产过程就可以避免绕镀的发生，从本质上解决了绕镀的问题。无需另外增加一道工序，简化加工过程，节省成本。本发明对于成本极其敏感的光伏太阳能行业，具有重要的意义。而且，本发明还解决了划伤的问题。
相应的，本发明还公开一种管式PERC太阳能电池的镀膜方法，包括：
(1)将石墨舟烘干；
(2)在烘干后的石墨舟的表面，镀至少一层碳化硅膜；
(3)把经过处理后的硅片放置在石墨舟上，通过石墨舟送入管式PECVD镀膜设备，在硅片的表面形成背面复合膜，所述背面复合膜包括三氧化二铝膜、二氧化硅膜、氮氧化硅膜和氮化硅膜。
作为镀膜方法优选的实施方式，镀膜方法包括：
(1)将石墨舟放入管式PECVD镀膜设备进行烘干，烘干温度为300-480℃，时间为10-60min；
(2)烘干出舟后，将石墨舟再次放入管式PECVD镀膜设备，在石墨舟的表面镀至少一层碳化硅膜，其中，碳化硅膜的镀膜方法如下：
升温到380-480℃，通入氨气，等离子功率为2000-5000w，流量为1-8slm，时间为2-10min；
通入甲烷和硅烷，甲烷流量为2-8slm，硅烷流量为200-800sccm，时间为5-30s；
通入甲烷和硅烷，等离子功率为3000-10000w，时间为1-4小时，甲烷流量为2-8slm，硅烷流量为200-800sccm；
降温至350-400℃，出舟；
(3)把经过处理后的硅片放置在石墨舟上，通过石墨舟送入管式PECVD镀膜设备，形成背面复合膜，其中，背面复合膜的镀膜方法如下：
采用TMA与N2O沉积三氧化二铝膜，TMA的气体流量为250-500sccm，TMA与N2O的比例为1/15-25，等离子功率为2000-5000w；
采用硅烷、氨气和笑气沉积氮氧化硅膜，硅烷的气体流量为50-200sccm，硅烷与笑气的比例为1/10-80，氨气的流量为0.1-5slm，等离子功率为4000-6000w；
采用硅烷和氨气沉积氮化硅膜，硅烷的气体流量为500-1000sccm，硅烷与氨气的比例为1/6-15，氮化硅的沉积温度为390-410℃，时间为100-400s，等离子功率为10000-13000w；
采用笑气沉积二氧化硅膜，笑气的流量为0.1-5slm，等离子功率为2000-5000w。
作为镀膜方法更佳的实施方式，镀膜方法包括：
(1)将石墨舟放入管式PECVD镀膜设备进行烘干，烘干温度为320-420度，时间为20-40min；
(2)烘干出舟后，将石墨舟再次放入管式PECVD镀膜设备，在石墨舟的表面镀至少一层碳化硅膜，其中，碳化硅膜的镀膜方法如下：
升温到400-460℃，通入氨气，等离子功率为3000-4000w，流量为2-6slm，时间为3-8min；
通入甲烷和硅烷，甲烷流量为3-6slm，硅烷流量为300-600sccm，时间为10-20s；
通入甲烷和硅烷，等离子功率为5000-8000w，时间为2-3小时，甲烷流量为3-6slm，硅烷流量为300-600sccm；
降温至370-390℃，出舟；
(3)把经过处理后的硅片放置在石墨舟上，通过石墨舟送入管式PECVD镀膜设备，形成背面复合膜，其中，背面复合膜的镀膜方法如下：
采用TMA与N2O沉积三氧化二铝膜，TMA的气体流量为250-500sccm，TMA与N2O的比例为1/15-25，三氧化二铝膜的沉积温度为250-300℃，时间为50-300s，等离子功率为2000-5000w；
采用硅烷、氨气和笑气沉积氮氧化硅膜，硅烷的气体流量为50-200sccm，硅烷与笑气的比例为1/10-80，氨气的流量为0.1-5slm，氮氧化硅膜的沉积温度为350-410℃，时间为50-200s，等离子功率为4000-6000w；
采用硅烷和氨气沉积氮化硅膜，硅烷的气体流量为500-1000sccm，硅烷与氨气的比例为1/6-15，氮化硅膜的沉积温度为390-410℃，时间为100-400s，等离子功率为10000-13000w；
采用笑气沉积二氧化硅膜，笑气的流量为0.1-5slm，等离子功率为2000-5000w。
申请人发现，绕镀主要发生在氮化硅的沉积阶段。由于氮化硅处于背面复合膜的外层，随着沉积时间的增加，硅片表面的膜层加厚，硅片发生弯曲，硅烷和氨气就会更容易绕镀到电池正面边缘。通过缩短氮化硅沉积的时间和温度，可以降低硅片的弯曲度，减少绕镀的比例。进一步的试验表明，氮化硅沉积的温度窗口很窄，为390-410度，当进一步降低温度，绕镀的比例却上升。
沉积三氧化二铝膜时，将等离子功率设为2000-5000w；沉积氮氧化硅膜时，将等离子功率设为4000-6000w；沉积氮化硅膜时，将等离子功率设为10000-13000w；沉积二氧化硅膜时，等离子功率设为2000-5000w。确保不同的膜层都具有较佳的沉积速率，改善沉积的均匀性。
因此，所述管式PERC太阳能电池的镀膜方法可以简化石墨舟预处理步骤，节省硅片的消耗，并避免对硅片的划伤，减少EL黑边等EL不良，提高了电池的EL良率。
下面以具体实施例进一步阐述本发明
实施例1
(1)将石墨舟放入管式PECVD镀膜设备进行烘干，烘干温度为300度，时间为20min；
(2)烘干出舟后，将石墨舟再次放入管式PECVD镀膜设备，在石墨舟的表面镀至少一层碳化硅膜，其中，碳化硅膜的镀膜方法如下：
升温到380℃，通入氨气，等离子功率为2000w，流量为1slm，时间为2min；
通入甲烷和硅烷，甲烷流量为2slm，硅烷流量为200sccm，时间为5s；
通入甲烷和硅烷，等离子功率为3000w，时间为1小时，甲烷流量为2slm，硅烷流量为200sccm；
降温至350℃，出舟。
(3)把经过处理后的硅片放置在石墨舟上，通过石墨舟送入管式PECVD镀膜设备，形成背面复合膜，其中，背面复合膜的镀膜方法如下：
采用TMA与N2O沉积三氧化二铝膜，TMA的气体流量为250sccm，TMA与N2O的比例为1/15，三氧化二铝膜的沉积温度为250℃，时间为50s，等离子功率为2000w；
采用硅烷、氨气和笑气沉积氮氧化硅膜，硅烷的气体流量为50sccm，硅烷与笑气的比例为1/10，氨气的流量为0.1slm，氮氧化硅膜的沉积温度为350℃，时间为50s，等离子功率为4000w；
采用硅烷和氨气沉积氮化硅膜，硅烷的气体流量为500sccm，硅烷与氨气的比例为1/6，氮化硅膜的沉积温度为390℃，时间为100s，等离子功率为10000w；
采用笑气沉积二氧化硅膜，笑气的流量为0.1slm，等离子功率为2000w。
实施例2
(1)将石墨舟放入管式PECVD镀膜设备进行烘干，烘干温度为350度，时间为25min；
(2)烘干出舟后，将石墨舟再次放入管式PECVD镀膜设备，在石墨舟的表面镀至少一层碳化硅膜，其中，碳化硅膜的镀膜方法如下：
升温到400℃，通入氨气，等离子功率为3000w，流量为2slm，时间为3min；
通入甲烷和硅烷，甲烷流量为4slm，硅烷流量为400sccm，时间为10s；
通入甲烷和硅烷，等离子功率为5000w，时间为2小时，甲烷流量为3slm，硅烷流量为300sccm；
降温至360℃，出舟。
(3)把经过处理后的硅片放置在石墨舟上，通过石墨舟送入管式PECVD镀膜设备，形成背面复合膜，其中，背面复合膜的镀膜方法如下：
采用TMA与N2O沉积三氧化二铝膜，TMA的气体流量为300sccm，TMA与N2O的比例为1/18，三氧化二铝膜的沉积温度为260℃，时间为80s，等离子功率为2500w；
采用硅烷、氨气和笑气沉积氮氧化硅膜，硅烷的气体流量为80sccm，硅烷与笑气的比例为1/20，氨气的流量为1slm，氮氧化硅膜的沉积温度为360℃，时间为100s，等离子功率为4500w；
采用硅烷和氨气沉积氮化硅膜，硅烷的气体流量为600sccm，硅烷与氨气的比例为1/8，氮化硅膜的沉积温度为395℃，时间为150s，等离子功率为10000w；
采用笑气沉积二氧化硅膜，笑气的流量为1slm，等离子功率为2500w。
实施例3
(1)将石墨舟放入管式PECVD镀膜设备进行烘干，烘干温度为370度，时间为30min；
(2)烘干出舟后，将石墨舟再次放入管式PECVD镀膜设备，在石墨舟的表面镀至少一层碳化硅膜，其中，碳化硅膜的镀膜方法如下：
升温到420℃，通入氨气，等离子功率为4000w，流量为5slm，时间为5min；
通入甲烷和硅烷，甲烷流量为5slm，硅烷流量为500sccm，时间为15s；
通入甲烷和硅烷，等离子功率为6000w，时间为1.5小时，甲烷流量为4slm，硅烷流量为500sccm；
降温至380℃，出舟。
(3)把经过处理后的硅片放置在石墨舟上，通过石墨舟送入管式PECVD镀膜设备，形成背面复合膜，其中，背面复合膜的镀膜方法如下：
采用TMA与N2O沉积三氧化二铝膜，TMA的气体流量为350sccm，TMA与N2O的比例为1/22，三氧化二铝膜的沉积温度为280℃，时间为150s，等离子功率为3500w；
采用硅烷、氨气和笑气沉积氮氧化硅膜，硅烷的气体流量为180sccm，硅烷与笑气的比例为1/40，氨气的流量为3slm，氮氧化硅膜的沉积温度为380℃，时间为150s，等离子功率为5000w；
采用硅烷和氨气沉积氮化硅膜，硅烷的气体流量为800sccm，硅烷与氨气的比例为1/10，氮化硅膜的沉积温度为405℃，时间为300s，等离子功率为12000w；
采用笑气沉积二氧化硅膜，笑气的流量为4slm，等离子功率为4000w。
实施例4
(1)将石墨舟放入管式PECVD镀膜设备进行烘干，烘干温度为400度，时间为35min；
(2)烘干出舟后，将石墨舟再次放入管式PECVD镀膜设备，在石墨舟的表面镀至少一层碳化硅膜，其中，碳化硅膜的镀膜方法如下：
升温到450℃，通入氨气，等离子功率为4000w，流量为6slm，时间为8min；
通入甲烷和硅烷，甲烷流量为6slm，硅烷流量为500sccm，时间为20s；
通入甲烷和硅烷，等离子功率为8000w，时间为1小时，甲烷流量为6slm，硅烷流量为500sccm；
降温至390℃，出舟。
(3)把经过处理后的硅片放置在石墨舟上，通过石墨舟送入管式PECVD镀膜设备，形成背面复合膜，其中，背面复合膜的镀膜方法如下：
采用TMA与N2O沉积三氧化二铝膜，TMA的气体流量为400sccm，TMA与N2O的比例为1/20，三氧化二铝膜的沉积温度为280℃，时间为250s，等离子功率为4500w；
采用硅烷、氨气和笑气沉积氮氧化硅膜，硅烷的气体流量为180sccm，硅烷与笑气的比例为1/60，氨气的流量为4slm，氮氧化硅膜的沉积温度为400℃，时间为180s，等离子功率为5500w；
采用硅烷和氨气沉积氮化硅膜，硅烷的气体流量为900sccm，硅烷与氨气的比例为1/14，氮化硅膜的沉积温度为400℃，时间为300s，等离子功率为13000w；
采用笑气沉积二氧化硅膜，笑气的流量为4slm，等离子功率为4000w。
实施例5
(1)将石墨舟放入管式PECVD镀膜设备进行烘干，烘干温度为420度，时间为30min；
(2)烘干出舟后，将石墨舟再次放入管式PECVD镀膜设备，在石墨舟的表面镀至少一层碳化硅膜，其中，碳化硅膜的镀膜方法如下：
升温到480℃，通入氨气，等离子功率为5000w，流量为8slm，时间为10min；
通入甲烷和硅烷，甲烷流量为8slm，硅烷流量为800sccm，时间为30s；
通入甲烷和硅烷，等离子功率为10000w，时间为1小时，甲烷流量为8slm，硅烷流量为800sccm；
降温至400℃，出舟。
(3)把经过处理后的硅片放置在石墨舟上，通过石墨舟送入管式PECVD镀膜设备，形成背面复合膜，其中，背面复合膜的镀膜方法如下：
采用TMA与N2O沉积三氧化二铝膜，TMA的气体流量为500sccm，TMA与N2O的比例为1/25，三氧化二铝膜的沉积温度为300℃，时间为300s，等离子功率为5000w；
采用硅烷、氨气和笑气沉积氮氧化硅膜，硅烷的气体流量为200sccm，硅烷与笑气的比例为1/80，氨气的流量为5slm，氮氧化硅膜的沉积温度为410℃，时间为200s，等离子功率为6000w；
采用硅烷和氨气沉积氮化硅膜，硅烷的气体流量为1000sccm，硅烷与氨气的比例为1/15，氮化硅膜的沉积温度为410℃，时间为400s，等离子功率为13000w；
采用笑气沉积二氧化硅膜，笑气的流量为5slm，等离子功率为5000w。
实施例1-5所述的镀膜方法，其技术检测如下：
项目 硅片的消耗量 硅片的划伤率 EL良率 石墨舟预处理时间
现有技术 280片/舟 5-10％ 20-60％ 3-6h
实施例1 0 1-4％ 80-90％ 82min左右
实施例2 0 1-3％ 85-90％ 148min左右
实施例3 0 1-2.5％ 90-95％ 125min左右
实施例4 0 0.5-3.5％ 95-97％ 103min左右
实施例5 0 0.5-2％ 95-98％ 100min左右
综上所述，实施本发明，具有如下有益效果：
一，本发明提供了一种管式PERC太阳能电池的镀膜设备，包括加热系统和特气柜，其中特气柜设有用于通入硅烷的第一气体管路、用于通入氨气的第二气体管路、用于通入三甲基铝的第三气体管路、用于通入笑气的第四气体管路以及用于通入甲烷的第五气体管路。石墨舟在使用之前或经过多次镀膜之后需经预处理，具体的，通过加热系统对石墨舟进行烘干处理，通过特气柜在石墨舟的表面镀至少一层碳化硅膜。对石墨舟镀碳化硅膜，不需要插硅片，由于碳化硅是半导体，背面三氧化二铝镀膜具有良好的均匀性，石墨舟预处理的步骤减少到烘干和碳化硅镀膜两个步骤，节约时间，提高生产效率。另外，由于在碳化硅基体中含有大量的弥散细小的石墨颗粒，其摩擦系数非常小，具有良好的自润滑性能，在插硅片到石墨舟的过程中，对硅片的划伤小，大幅度降低了EL划伤比例，提高了电池的EL良率。
进一步，本发明通过调节卡点轴直径和卡点底座直径的大小，减少卡点槽内侧的深度，从而减小卡点处硅片与卡点底座之间的缝隙大小，进而减少气流绕镀到硅片背面，大幅降低电池正面边缘舟齿印的比例。而且，通过适当增加 卡点帽斜面的角度和卡点帽的厚度，通过调整自动插片机，略微增加插片时硅片离石墨舟壁的距离，降低划伤的比例，同时减少硅片滑落时跟石墨舟壁的撞击力，降低碎片率。
二，本发明提供了一种管式PERC太阳能电池的镀膜方法，其在镀背面复合膜之前，只需要对石墨舟进行两个步骤的预处理(烘干+碳化硅镀膜)，无需像现有技术那样需要插片镀膜，大大减少了硅片的消耗，也避免硅片因为表面镀膜太厚而发生很大的弯曲，节省生产时间，提高生产效率。而且，镀碳化硅膜的过程中，由于在碳化硅基体中含有大量的弥散细小的石墨颗粒，其摩擦系数非常小，具有良好的自润滑性能，在插硅片到石墨舟的过程中，对硅片的划伤小，大幅度降低了EL划伤比例，提高了电池的EL良率。
进一步，在镀背面复合膜的过程中，本发明设定氮化硅的沉积温度为390-410℃，时间为100-400s，通过缩短氮化硅沉积的时间和温度，可以降低硅片的弯曲度，减少绕镀的比例。氮化硅沉积的温度窗口很窄，为390-410℃，可以最大程度减少绕镀。但，当沉积温度低于390℃，绕镀的比例却上升。
最后所应当说明的是，以上实施例仅用以说明本发明的技术方案而非对本发明保护范围的限制，尽管参照较佳实施例对本发明作了详细说明，本领域的普通技术人员应当理解，可以对本发明的技术方案进行修改或者等同替换，而不脱离本发明技术方案的实质和范围。

Claims (10)

  1. 一种管式PERC太阳能电池的镀膜设备，其特征在于，包括晶片装载区、炉体、特气柜、真空系统、加热系统、控制系统以及石墨舟，所述特气柜设有用于通入硅烷的第一气体管路、用于通入氨气的第二气体管路、用于通入三甲基铝的第三气体管路、用于通入笑气的第四气体管路以及用于通入甲烷的第五气体管路；
    所述石墨舟用于装卸硅片，所述石墨舟在使用之前或经过多次镀膜之后需经预处理，所述预处理包括：
    将石墨舟烘干；
    在烘干后的石墨舟的表面，镀至少一层碳化硅膜。
  2. 如权利要求1所述管式PERC太阳能电池的镀膜设备，其特征在于，所述预处理包括：
    将石墨舟放入管式PECVD镀膜设备进行烘干，烘干温度为300-480℃，时间为10-60min；
    烘干出舟后，将石墨舟再次放入管式PECVD镀膜设备，在石墨舟的表面镀至少一层碳化硅膜。
  3. 如权利要求2所述管式PERC太阳能电池的镀膜设备，其特征在于，碳化硅膜的镀膜步骤包括：
    升温到380-480℃，通入氨气，等离子功率为2000-5000w，流量为1-8slm，时间为2-10min；
    通入甲烷和硅烷，甲烷流量为2-8slm，硅烷流量为200-800sccm，时间为5-30s；
    通入甲烷和硅烷，等离子功率为3000-10000w，时间为1-4小时，甲烷流量为2-8slm，硅烷流量为200-800sccm；
    降温至350-400℃，出舟。
  4. 如权利要求3所述管式PERC太阳能电池的镀膜设备，其特征在于，碳 化硅膜的镀膜步骤包括：
    升温到400-460℃，通入氨气，等离子功率为3000-4000w，流量为2-6slm，时间为3-8min；
    通入甲烷和硅烷，甲烷流量为3-6slm，硅烷流量为300-600sccm，时间为10-20s；
    通入甲烷和硅烷，等离子功率为5000-8000w，时间为2-3小时，甲烷流量为3-6slm，硅烷流量为300-600sccm；
    降温至370-390℃，出舟。
  5. 如权利要求1所述管式PERC太阳能电池的镀膜设备，其特征在于，所述石墨舟包括卡点，所述卡点包括卡点轴、卡点帽和卡点底座，所述卡点轴安装在卡点底座上，所述卡点帽与卡点轴连接，所述卡点轴与卡点帽、卡点底座之间形成卡点槽，卡点槽的深度为0.5-1mm。
  6. 如权利要求5所述管式PERC太阳能电池的镀膜设备，其特征在于，所述石墨舟的卡点槽的深度为0.6-0.8mm，卡点底座的直径为6-15mm，卡点帽的斜面角度为35-45度，卡点帽的厚度为1-1.3mm。
  7. 如权利要求6所述管式PERC太阳能电池的镀膜设备，其特征在于，所述石墨舟的卡点槽的深度为0.7-0.8mm，卡点底座的直径为8-12mm，卡点帽的斜面角度为37-42度，卡点帽的厚度为1.1-1.2mm。
  8. 一种管式PERC太阳能电池的镀膜方法，其特征在于，包括：
    (1)将石墨舟烘干；
    (2)在烘干后的石墨舟的表面，镀至少一层碳化硅膜；
    (3)把经过处理后的硅片放置在石墨舟上，通过石墨舟送入管式PECVD镀膜设备，在硅片的表面形成背面复合膜，所述背面复合膜包括三氧化二铝膜、二氧化硅膜、氮氧化硅膜和氮化硅膜。
  9. 如权利要求8所述管式PERC太阳能电池的镀膜方法，其特征在于，包 括：
    (1)将石墨舟放入管式PECVD镀膜设备进行烘干，烘干温度为300-480℃，时间为10-60min；
    (2)烘干出舟后，将石墨舟再次放入管式PECVD镀膜设备，在石墨舟的表面镀至少一层碳化硅膜，其中，碳化硅膜的镀膜方法如下：
    升温到380-480℃，通入氨气，等离子功率为2000-5000w，流量为1-8slm，时间为2-10min；
    通入甲烷和硅烷，甲烷流量为2-8slm，硅烷流量为200-800sccm，时间为5-30s；
    通入甲烷和硅烷，等离子功率为3000-10000w，时间为1-4小时，甲烷流量为2-8slm，硅烷流量为200-800sccm；
    降温至350-400℃，出舟；
    (3)把经过处理后的硅片放置在石墨舟上，通过石墨舟送入管式PECVD镀膜设备，形成背面复合膜，其中，背面复合膜的镀膜方法如下：
    采用TMA与N2O沉积三氧化二铝膜，TMA的气体流量为250-500sccm，TMA与N2O的比例为1/15-25，等离子功率为2000-5000w；
    采用硅烷、氨气和笑气沉积氮氧化硅膜，硅烷的气体流量为50-200sccm，硅烷与笑气的比例为1/10-80，氨气的流量为0.1-5slm，等离子功率为4000-6000w；
    采用硅烷和氨气沉积氮化硅膜，硅烷的气体流量为500-1000sccm，硅烷与氨气的比例为1/6-15，氮化硅的沉积温度为390-410℃，时间为100-400s，等离子功率为10000-13000w；
    采用笑气沉积二氧化硅膜，笑气的流量为0.1-5slm，等离子功率为2000-5000w。
  10. 如权利要求9所述管式PERC太阳能电池的镀膜方法，其特征在于，包括：
    (1)将石墨舟放入管式PECVD镀膜设备进行烘干，烘干温度为320-420度，时间为20-40min；
    (2)烘干出舟后，将石墨舟再次放入管式PECVD镀膜设备，在石墨舟的 表面镀至少一层碳化硅膜，其中，碳化硅膜的镀膜方法如下：
    升温到400-460℃，通入氨气，等离子功率为3000-4000w，流量为2-6slm，时间为3-8min；
    通入甲烷和硅烷，甲烷流量为3-6slm，硅烷流量为300-600sccm，时间为10-20s；
    通入甲烷和硅烷，等离子功率为5000-8000w，时间为2-3小时，甲烷流量为3-6slm，硅烷流量为300-600sccm；
    降温至370-390℃，出舟；
    (3)把经过处理后的硅片放置在石墨舟上，通过石墨舟送入管式PECVD镀膜设备，形成背面复合膜，其中，背面复合膜的镀膜方法如下：
    采用TMA与N2O沉积三氧化二铝膜，TMA的气体流量为250-500sccm，TMA与N2O的比例为1/15-25，三氧化二铝膜的沉积温度为250-300℃，时间为50-300s，等离子功率为2000-5000w；
    采用硅烷、氨气和笑气沉积氮氧化硅膜，硅烷的气体流量为50-200sccm，硅烷与笑气的比例为1/10-80，氨气的流量为0.1-5slm，氮氧化硅膜的沉积温度为350-410℃，时间为50-200s，等离子功率为4000-6000w；
    采用硅烷和氨气沉积氮化硅膜，硅烷的气体流量为500-1000sccm，硅烷与氨气的比例为1/6-15，氮化硅膜的沉积温度为390-410℃，时间为100-400s，等离子功率为10000-13000w；
    采用笑气沉积二氧化硅膜，笑气的流量为0.1-5slm，等离子功率为2000-5000w。
PCT/CN2017/087443 2017-06-07 2017-06-07 管式perc太阳能电池的镀膜设备及镀膜方法 Ceased WO2018223314A1 (zh)

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