WO2019001182A1 - 有机电致发光器件及其制备方法 - Google Patents

有机电致发光器件及其制备方法 Download PDF

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WO2019001182A1
WO2019001182A1 PCT/CN2018/088066 CN2018088066W WO2019001182A1 WO 2019001182 A1 WO2019001182 A1 WO 2019001182A1 CN 2018088066 W CN2018088066 W CN 2018088066W WO 2019001182 A1 WO2019001182 A1 WO 2019001182A1
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layer
doped layer
organic electroluminescent
electroluminescent device
group
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French (fr)
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李维维
刘胜芳
闵超
徐磊
高孝裕
黄秀颀
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Kunshan Govisionox Optoelectronics Co Ltd
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Kunshan Govisionox Optoelectronics Co Ltd
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Priority to US16/327,339 priority Critical patent/US11233201B2/en
Priority to JP2019544684A priority patent/JP6805359B2/ja
Priority to KR1020197023719A priority patent/KR102252104B1/ko
Priority to EP18825159.9A priority patent/EP3567646B1/en
Publication of WO2019001182A1 publication Critical patent/WO2019001182A1/zh
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Definitions

  • the present invention relates to the field of light emitting devices, and in particular, to an organic electroluminescent device and a method for fabricating the same.
  • Organic electroluminescence refers to the phenomenon that an organic light-emitting material emits light under the excitation of a current or an electric field.
  • Organic Light-Emitting Diode has active illumination, high luminous efficiency, fast response time (on the order of 1 ⁇ s), low operating voltage (3v to 10v), wide viewing angle (>175° or more), and panel Wide thickness ( ⁇ 1mm), low power consumption, wide operating temperature range (-40°C to +85°C), and flexible display, have attracted a lot of attention.
  • an organic electroluminescent device comprising: a hole injection layer comprising a first doped layer or a second doped layer, wherein the first doped layer comprises a P-type a dopant, the second doped layer includes a P-type dopant and a hole transporting material; a hole transporting layer formed on the hole injecting layer; and an electron blocking layer formed on the hole On the transport layer; wherein the HOMO energy level difference between the electron blocking layer and the hole transport layer is less than or equal to 0.2 eV.
  • the P-type dopant in the first doped layer can increase the amount of hole injection, thereby improving the lifetime of the mass production device; in the second doped layer, by adjusting the P-type doping
  • the doping concentration of the substance can control the injection amount of holes, thereby adjusting the balance of electrons and holes, thereby improving the life of the mass production device.
  • the HOMO level difference between the electron blocking layer and the hole transport layer is less than or equal to 0.2 eV, which can reduce the power consumption of the organic electroluminescent device, thereby improving the lifetime of the mass production device.
  • the P-type dopant in the second doped layer, has a doping concentration of 3 wt% to 8 wt%.
  • the hole injection layer includes the first doped layer and the second doped layer formed on the first doped layer, and the second doped layer is adjacent to the The hole transport layer is described.
  • the hole injection layer includes the second doped layer and the first doped layer formed on the second doped layer, the first doped layer is adjacent to the The hole transport layer is described.
  • the first doped layer when the hole injection layer includes only the first doped layer, the first doped layer has a thickness of 5 nm to 20 nm; when the hole injection layer includes only the In the second doped layer, the second doped layer has a thickness of 10 nm to 30 nm; when the hole injecting layer includes the first doped layer and the second doped layer simultaneously, the first A doped layer has a thickness of 1 nm to 10 nm, and the second doped layer has a thickness of 10 nm to 20 nm.
  • the P-type dopant is selected from at least one of NDP-2 and NDP-9.
  • the material of the hole transporting material and the hole transporting layer are independently selected from at least one of the structures shown in formula (1) and formula (2):
  • a and B are each independently selected from a phenyl group, a naphthyl group or an anilino group;
  • R1, R2, R3, R4, R5, R6, R7, R8, R15, R16, R17 and R18 are each independently selected from the group consisting of hydrogen, halogen, CN, NO 2 , amino, C6-C30 fused ring aryl And one of a C6-C30 sub-fused heterocyclic aryl group, a C6-C20 alkyl group, and a C6-C30 alcohol group;
  • R9, R10, R11 and R12 are each independently selected from the group consisting of hydrogen element and C6-C30 aryl group;
  • A1 and A2 in the formula (2) are each independently selected from one of a C6-C30 aryl group and a substituted or unsubstituted C6-C30 heterocyclic aryl group, and R1' is selected from a hydrogen element, an alkyl group, an alkoxy group, and One of the bases;
  • the formula (2) simultaneously satisfies the following condition: at least one of A1 and A2 has a condensed ring configuration.
  • the material of the electron blocking layer is selected from at least one of the indenoindole derivatives of the structures represented by formula (3), formula (4), formula (5), and formula (6):
  • a and B are each independently selected from the group consisting of a phenyl group, a naphthyl group, and an anilino group;
  • R9, R10, R11 and R12 are each independently selected from the group consisting of hydrogen element and C6-C30 aryl group;
  • R13 is selected from one of a C1-C6 alkyl group and a hydroxyl group.
  • the organic electroluminescent device is an organic electroluminescent device that shares a blue electron blocking layer.
  • a method of fabricating an organic electroluminescent device comprising the steps of: forming a hole injection layer comprising a first doped layer and/or a second doping layer a hetero layer, wherein the first doped layer comprises a P-type dopant, the second doped layer comprises a P-type dopant and a hole transporting material; forming an empty space on the hole injecting layer a hole transport layer; and forming an electron blocking layer on the hole transport layer, wherein a difference in HOMO level between the electron block layer and the hole transport layer is less than or equal to 0.2 eV.
  • the P-type dopant in the first doped layer can increase the amount of hole injection, thereby improving the life of the mass production device;
  • the impurity layer by adjusting the doping concentration of the P-type dopant, it is possible to control the injection amount of holes, thereby adjusting the balance of electrons and holes, thereby improving the life of the mass production device.
  • the HOMO level difference between the electron blocking layer and the hole transport layer is less than or equal to 0.2 eV, which can reduce the power consumption of the organic electroluminescent device, thereby improving the lifetime of the mass production device.
  • FIG. 1 is a flow chart of a method of fabricating an organic electroluminescent device according to an embodiment of the present invention
  • Example 2 is a schematic view of an organic electroluminescent device of Example 1;
  • Example 3 is a schematic view of an organic electroluminescent device of Example 2.
  • Example 4 is a schematic view of an organic electroluminescent device of Example 5.
  • Fig. 5 is a schematic view of an organic electroluminescent device of Example 6.
  • An organic electroluminescent device of the present invention comprising: a hole injection layer comprising a first doped layer and/or a second doped layer; wherein the first doped layer comprises a P-type dopant;
  • the doped layer includes a P-type dopant and a hole transporting material; a hole transporting layer formed on the hole injecting layer; and an electron blocking layer formed on the hole transporting layer; wherein the electron blocking layer is empty
  • the HOMO (highest occupied molecular orbital) energy level difference of the hole transport layer is less than or equal to 0.2 eV.
  • the organic electroluminescent device of Embodiment 1 includes an anode and a hole injecting layer, a hole transporting layer, an electron blocking layer, an organic light emitting layer, an electron transporting layer, and a cathode which are sequentially formed on the anode.
  • the hole injection layer comprises a first doped layer.
  • the first doped layer includes a P-type dopant. P-type dopants can increase the amount of hole injection, thereby increasing the lifetime of mass production devices.
  • the hole injection layer includes only the first doped layer.
  • the first doped layer is composed of a P-type dopant.
  • the P-type dopant in this embodiment may contain a small amount of impurities in the stoichiometric range, and these impurities are negligible.
  • the P-type dopant is selected from at least one of NDP-2 and NDP-9.
  • NDP-2 and NDP-9 are both purchased from Novaled, and the structural formula of NDP-9 is as follows:
  • Such dopant materials are capable of injecting a large number of holes, thereby reducing the energy level difference between the anode and the hole transport layer, thereby facilitating the transport of holes to the hole transport layer.
  • the P-type dopant is not limited to the above embodiment, and may be selected from other materials capable of reducing the energy level difference between the anode and the hole transport layer.
  • the first doped layer has a thickness of 5 nm to 20 nm.
  • the thickness of the first doped layer is 5 nm to 20 nm, on the one hand, the anode surface can be effectively covered, thereby eliminating defects caused by rough surface of the anode; on the other hand, the injection amount of holes can be regulated, which is more favorable for hole transport.
  • composite light is emitted with electrons.
  • the first doped layer may be a layer of P-type dopant, or may be two or more layers of different P-type doping. Superposition of objects.
  • a hole transport layer is formed on the hole injection layer.
  • An electron blocking layer is formed on the hole transport layer.
  • the HOMO energy level difference between the hole transport layer and the electron blocking layer is less than or equal to 0.2 eV. It can reduce the power consumption of organic electroluminescent devices, thereby increasing the lifetime of mass production devices.
  • the material of the hole transport layer is selected from at least one of the structures shown by formula (1) and formula (2):
  • a and B are independently selected from a phenyl group, a naphthyl group or an anilino group
  • R1, R2, R3, R4, R5, R6, R7, R8, R15, R16, R17 and R18 are each independently selected from the group consisting of hydrogen, halogen, CN, NO 2 , amino, C6-C30 fused ring aryl And one of a C6-C30 sub-fused heterocyclic aryl group, a C6-C20 alkyl group, and a C6-C30 alcohol group;
  • R9, R10, R11 and R12 are each independently selected from the group consisting of hydrogen element and C6-C30 aryl group;
  • A1 and A2 in the formula (2) are each independently selected from one of a C6-C30 aryl group and a substituted or unsubstituted C6-C30 heterocyclic aryl group, and R1' is selected from a hydrogen element, an alkyl group, an alkoxy group, and One of the bases;
  • the formula (2) simultaneously satisfies the following condition: at least one of A1 and A2 has a condensed ring structure, that is, at least one of A1 and A2 has a cyclic structure, and the cyclic structure has an unsaturated bond.
  • the material of the hole transport layer is selected from at least one of the structures represented by the formula (HTL1-1)-(HTL1-10):
  • the material of the hole transport layer has good transport characteristics, relatively high mobility, can shorten the HOMO level difference with the electron blocking layer, and is more favorable for the transport and transport of holes.
  • the material of the above hole transport layer itself is relatively stable in performance, and a device having relatively stable performance can be prepared.
  • the material of the hole transport layer is not limited thereto, and may be selected from other materials capable of performing the same function.
  • the hole transport layer has a thickness of 10 nm to 100 nm.
  • the thickness of the hole transport layer is from 10 nm to 100 nm, the hole transport and the adjustment of the optical microcavity are more favorable.
  • the material of the electron blocking layer is at least one selected from the group consisting of indenofluorene derivatives of the structures represented by formula (3), formula (4), formula (5) and formula (6):
  • a and B are each independently selected from the group consisting of a phenyl group, a naphthyl group, and an anilino group;
  • R9, R10, R11 and R12 are each independently selected from the group consisting of hydrogen element and C6-C30 aryl group;
  • R13 is selected from one of a C1-C6 alkyl group and a hydroxyl group.
  • the material of the electron blocking layer is selected from at least one of the following molecular formulae compounds EBL2-1 to EBL2-12:
  • the absolute value of the LUMO energy level of the material of the above electron blocking layer is smaller than the absolute value of the LUMO energy level of the organic light-emitting layer, so that electrons can be blocked in the organic light-emitting layer to improve efficiency.
  • the material of the electron blocking layer is not limited thereto, and may be selected from other materials capable of performing the same function.
  • the thickness of the electron blocking layer is from 1 nm to 10 nm.
  • the electron emission layer can be effectively blocked while controlling the voltage of the device.
  • the organic electroluminescent device is an organic electroluminescent device that shares a blue electron blocking layer.
  • sharing the blue electron blocking layer can increase the compensation of red light and blue light; on the other hand, when preparing the organic electroluminescent device sharing the blue electron blocking layer, since the blue electron blocking layer is a common layer, In the case of vapor deposition, it is only necessary to use a common metal mask (CMM) without using a precision metal mask (FMM), which is advantageous for simplifying the production process.
  • CCM common metal mask
  • FMM precision metal mask
  • the hole injection layer includes a first doped layer, and the first doped layer includes a P-type dopant.
  • P-type dopants can increase the amount of hole injection, which is beneficial to increase the lifetime.
  • the organic electroluminescent device of the second embodiment is different from the organic electroluminescent device of the first embodiment in that the hole injection layer includes a second doped layer.
  • the second doped layer includes a P-type dopant and a hole transport material.
  • the hole injection layer is composed of a second doped layer.
  • the second doped layer is composed of a P-type dopant and a hole transport material.
  • the second doped layer contains only the P-type dopant and the hole transporting material, which is more advantageous for controlling the injection amount of holes, thereby adjusting the balance of electrons and holes, thereby improving the life of the mass production device.
  • the P-type dopant and the hole transporting material in this embodiment may contain a small amount of impurities in the stoichiometric range, and these impurities are negligible.
  • the doping concentration of the P-type dopant is from 3 wt% to 8 wt%.
  • the doping concentration of the P-type dopant is from 3 wt% to 8 wt%, the balance between device lifetime and efficiency can be effectively adjusted.
  • the thickness of the second doped layer is from 10 nm to 30 nm.
  • the thickness of the second doped layer is 10 nm to 30 nm, the injection of holes can be ensured, thereby effectively adjusting the balance between device lifetime and efficiency.
  • the hole transporting material is selected from at least one of the structures shown by formula (1) and formula (2):
  • a and B are each independently selected from a phenyl group, a naphthyl group or an anilino group;
  • R1, R2, R3, R4, R5, R6, R7, R8, R15, R16, R17 and R18 are each independently selected from the group consisting of hydrogen, halogen, CN, NO 2 , amino, C6-C30 fused ring aryl And one of a C6-C30 sub-fused heterocyclic aryl group, a C6-C20 alkyl group, and a C6-C30 alcohol group;
  • R9, R10, R11 and R12 are each independently selected from the group consisting of hydrogen element and C6-C30 aryl group;
  • A1 and A2 in the formula (2) are each independently selected from one of a C6-C30 aryl group and a substituted or unsubstituted C6-C30 heterocyclic aryl group, and R1' is selected from a hydrogen element, an alkyl group, an alkoxy group, and One of the bases;
  • the formula (2) simultaneously satisfies the following condition: at least one of A1 and A2 has a condensed ring configuration.
  • the hole transporting material is selected from at least one of the structures represented by the formula (HTL1-1)-(HTL1-10):
  • the above hole transporting material has good transport characteristics, and the mobility is relatively high, which is more favorable for the transport and transport of holes.
  • the above-mentioned hole transporting material itself is relatively stable in performance, and a device having relatively stable performance can be prepared.
  • hole transporting material is not limited thereto, and may be selected from other materials capable of performing the same function.
  • the hole transporting material of the second doping layer and the material of the hole transporting layer may be the same or different.
  • the second doped layer may be one layer, or two or more layers, and the doping concentration of each layer may be the same or different.
  • the production cost is low, and in addition, the doping concentration can be adjusted to control the device performance, and the mass production can be simplified. The process is conducive to increasing production capacity.
  • the organic electroluminescent device of the third embodiment is different from the organic electroluminescent device of the first embodiment and the second embodiment in that the hole injection layer includes a first doped layer and a second formed on the first doped layer. A doped layer, the second doped layer is adjacent to the hole transport layer.
  • the first doped layer has a thickness of 1 nm to 10 nm
  • the second doped layer has a thickness of 10 nm to 20 nm.
  • the organic electroluminescent device of the third embodiment is capable of adjusting the injection amount of holes while improving the efficiency and lifetime of the device.
  • the organic electroluminescent device of the fourth embodiment is different from the organic electroluminescent device of the third embodiment in that the hole injection layer includes a second doped layer and a first doped layer formed on the second doped layer, A doped layer is adjacent to the hole transport layer.
  • the first doped layer has a thickness of 1 nm to 10 nm
  • the second doped layer has a thickness of 10 nm to 20 nm.
  • the organic electroluminescent device of Embodiment 4 is capable of adjusting the injection amount of holes while improving the efficiency and lifetime of the device.
  • the hole injection layer includes the first doped layer and the second doped layer
  • the number of layers of the first doped layer and the second doped layer may be arbitrarily set, and positions between the two are arbitrarily stacked.
  • the first doped layer and the second doped layer may be alternately stacked or may be alternately stacked.
  • the P-type dopant in the first doped layer can increase the amount of hole injection, thereby improving the lifetime of the mass production device; in the second doped layer, by adjusting the P-type doping
  • the doping concentration of the substance can control the injection amount of holes, thereby adjusting the balance of electrons and holes, thereby improving the life of the mass production device.
  • the HOMO level difference between the electron blocking layer and the hole transport layer is less than or equal to 0.2 eV, which can reduce the power consumption of the organic electroluminescent device, thereby improving the lifetime of the mass production device.
  • a method for fabricating an organic electroluminescent device includes the following steps:
  • the hole injection layer includes a first doped layer and/or a second doped layer; wherein the first doped layer comprises a P-type dopant and the second doped layer comprises a P- Type dopant and hole transport material.
  • step S20 forming a hole transport layer on the hole injection layer of step S10.
  • a hole transport layer is formed on the hole injection layer by vapor deposition.
  • step S30 forming an electron blocking layer on the hole transport layer of step S20; wherein, the HOMO energy level difference between the electron blocking layer and the hole transport layer is less than or equal to 0.2 eV.
  • An electron blocking layer is formed on the hole transport layer by evaporation.
  • the P-type dopant in the first doped layer can increase the amount of hole injection, thereby improving the life of the mass production device;
  • the impurity layer by adjusting the doping concentration of the P-type dopant, it is possible to control the injection amount of holes, thereby adjusting the balance of electrons and holes, thereby improving the life of the mass production device.
  • the HOMO level difference between the electron blocking layer and the hole transport layer is less than or equal to 0.2 eV, which can reduce the power consumption of the organic electroluminescent device, thereby improving the lifetime of the mass production device.
  • the organic electroluminescent device 100 of Embodiment 1 includes an anode 110 and a hole injection layer 120 sequentially formed on the anode 110, a hole transport layer 130, an electron blocking layer 140, an organic light emitting layer 150, and an electron. Transport layer 160 and cathode 170.
  • the hole injection layer 120 is composed of a first doped layer.
  • the first doped layer consists of NDP-9.
  • the material of the hole transport layer 130 is HTL1-2 (the structure is as shown above).
  • the material of the electron blocking layer 140 is EBL2-2 (the structure is as shown above).
  • the energy level difference between the hole transport layer 130 and the electron blocking layer 140 is 0.15 eV.
  • the materials of the anode 110, the electron blocking layer 140, the organic light-emitting layer 150, the electron transport layer 160, and the cathode 170 are sequentially ITO, EBL2-2 (structure is as shown above), Ir(ppy) 3 , ETL1-1 ( The structure is as shown above), Mg/Ag.
  • the thickness of the anode 110, the hole injection layer 120, the hole transport layer 130, the electron blocking layer 140, the organic light emitting layer 150, the electron transport layer 160, and the cathode 170 are sequentially 10 nm, 10 nm, 100 nm, 5 nm, 30 nm, 30 nm, and 20 nm. .
  • the organic electroluminescent device 200 of Embodiment 2 includes an anode 210 and a hole injection layer 220 sequentially formed on the anode 210, a hole transport layer 230, an electron blocking layer 240, an organic light emitting layer 250, and an electron.
  • the hole injection layer 220 is composed of a second doped layer.
  • the second doped layer is composed of NDP-9 and HTL1-2 (the structure is as shown above), and in the second doped layer, the doping concentration of the P-type dopant is 3 wt%.
  • the material of the hole transport layer 230 is HTL1-2 (the structure is as shown above).
  • the material of the electron blocking layer 240 is EBL2-2 (the structure is as shown above).
  • the energy level difference between the hole transport layer 230 and the electron blocking layer 240 is 0.15 eV.
  • the materials of the anode 210, the electron blocking layer 240, the organic light-emitting layer 250, the electron transport layer 260, and the cathode 270 are sequentially ITO, EBL2-2 (structure is as shown above), Ir(ppy) 3 , ETL1-1 ( The structure is as shown above), Mg/Ag.
  • the thickness of the anode 210, the hole injection layer 220, the hole transport layer 230, the electron blocking layer 240, the organic light-emitting layer 250, the electron transport layer 260, and the cathode 270 are sequentially 10 nm, 10 nm, 100 nm, 5 nm, 30 nm, 30 nm, and 20 nm. .
  • This embodiment differs from Embodiment 2 in that the doping concentration of the P-type dopant in the second doped layer is 5% by weight.
  • This embodiment differs from Embodiment 2 in that the doping concentration of the P-type dopant in the second doped layer is 7 wt%.
  • the organic electroluminescent device 300 of Embodiment 5 includes an anode 310 and a hole injection layer 320 sequentially formed on the anode 310, a hole transport layer 330, an electron blocking layer 340, an organic light emitting layer 350, and an electron.
  • Transport layer 360 and cathode 370 are sequentially formed on the anode 310, a hole transport layer 330, an electron blocking layer 340, an organic light emitting layer 350, and an electron.
  • Transport layer 360 and cathode 370 transport layer 360 and cathode 370.
  • the hole injection layer 320 includes a first doping layer 321 and a second doping layer 322.
  • the first doping layer 321 is formed on the anode 310, and the second doping layer 322 is formed on the first doping layer 321 .
  • the first doping layer 321 is composed of NDP-9.
  • the second doped layer 322 is composed of NDP-9 and HTL1-2 (the structure is as shown above), and in the second doped layer 322, the doping concentration of the P-type dopant is 5 wt%.
  • the material of the hole transport layer 330 is HTL1-2 (the structure is as shown above).
  • the material of the electron blocking layer 340 is EBL2-2 (the structure is as shown above).
  • the energy level difference between the hole transport layer 330 and the electron blocking layer 340 is 0.15 eV.
  • the materials of the anode 310, the electron blocking layer 340, the organic light-emitting layer 350, the electron transport layer 360, and the cathode 370 are sequentially ITO, EBL2-2 (structure is as shown above), Ir(ppy) 3 , ETL1-1 ( The structure is as shown above), Mg/Ag.
  • the thickness of the anode 310, the hole injection layer 320, the hole transport layer 330, the electron blocking layer 340, the organic light-emitting layer 350, the electron transport layer 360, and the cathode 370 are sequentially 10 nm, 20 nm, 100 nm, 5 nm, 30 nm, 30 nm, and 20 nm. .
  • the thickness of the first doping layer 321 and the second doping layer 322 are 10 nm and 10 nm, respectively.
  • the organic electroluminescent device 400 of Embodiment 6 includes an anode 410 and a hole injection layer 420, a hole transport layer 430, an electron blocking layer 440, an organic light-emitting layer 450, and an electron sequentially formed on the anode 410.
  • the hole injection layer 420 includes a first doping layer 421 and a second doping layer 422.
  • the second doping layer 422 is formed on the anode 410, and the first doping layer 421 is formed on the second doping layer 422.
  • the first doping layer 321 is composed of NDP-9.
  • the second doping layer 422 is composed of NDP-9 and HTL1-2 (the structure is as shown above), and in the second doping layer 422, the doping concentration of the P-type dopant is 5% by weight.
  • the material of the hole transport layer 430 is HTL1-2 (the structure is as shown above).
  • the material of the electron blocking layer 440 is EBL2-2 (the structure is as shown above).
  • the energy level difference between the hole transport layer 430 and the electron blocking layer 440 is 0.15 eV.
  • the materials of the anode 410, the electron blocking layer 440, the organic light-emitting layer 450, the electron transport layer 460, and the cathode 470 are sequentially ITO, EBL2-2 (structure is as shown above), Ir(ppy) 3 , ETL1-1 ( The structure is as shown above), Mg/Ag.
  • the thickness of the anode 410, the hole injection layer 420, the hole transport layer 430, the electron blocking layer 440, the organic light-emitting layer 450, the electron transport layer 460, and the cathode 470 are sequentially 10 nm, 20 nm, 100 nm, 5 nm, 30 nm, 30 nm, and 20 nm. .
  • the thicknesses of the first doping layer 421 and the second doping layer 422 are 10 nm and 10 nm, respectively.
  • this embodiment differs from Embodiment 1 in that the first doped layer is composed of NDP-2.
  • Comparative Example 1 differs from Example 2 in that the hole injection layer does not contain a P-type dopant and is composed only of HAT-CN.
  • the organic electroluminescent devices of Examples 1 to 7 and Comparative Example 1 were tested under the conditions of 1000 nit brightness.
  • the photoelectric performance is as follows:
  • the current efficiency of Comparative Example 1 is 112.05.
  • the current efficiencies of Examples 1 and 7 are similar to those of Comparative Example 1, which are 110.95 and 110.15, respectively, which can meet the current efficiency requirements of organic electroluminescent devices. .
  • the current efficiencies of the embodiments 2 to 6 of the present invention are 112.72, 114.76, 113.61, 113.15, and 112.56, respectively. That is, the current efficiencies of the inventive examples 2 to 6 are all greater than the current efficiencies of the comparative example 1. This indicates that the organic electroluminescent devices of Examples 2, 3, 4, 5 and 6 of the present invention have higher current efficiencies.
  • the LT97 of Comparative Example 1 was 500 h, while the LT97 of Examples 1-7 of the present invention were all greater than 1000 h. That is, the LT97 of the inventive examples 1 to 7 was twice or more the LT97 of Comparative Example 1. This indicates that the organic electroluminescent devices of Examples 1 to 7 of the present invention have a long life.
  • the organic electroluminescent device of the present invention not only has higher current efficiency, but also has a longer lifetime, which satisfies the demand for mass production, and is more advantageous for application.

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Abstract

一种有机电致发光器件及其制备方法。有机电致发光器件(100)包括：空穴注入层(120)，包括第一掺杂层和/或第二掺杂层；其中，第一掺杂层包括P-型掺杂物；第二掺杂层包括P-型掺杂物和空穴传输材料；空穴传输层(130)，形成于空穴注入层(120)上；以及电子阻挡层(140)，形成于空穴传输层(130)上；其中，电子阻挡层(140)与空穴传输层(130)的HOMO能级差小于或者等于0.2eV。第一掺杂层中的P-型掺杂物可以提高空穴注入量，从而提升量产器件的寿命；第二掺杂层中，通过调节P-型掺杂物的掺杂浓度，能够控制空穴的注入量，从而调节电子和空穴的平衡性，进而提升量产器件的寿命。同时，电子阻挡层与空穴传输层的HOMO能级差小于或者等于0.2eV，能够降低有机电致发光器件的功耗，从而提升量产器件的寿命。

Description

有机电致发光器件及其制备方法 技术领域
本发明涉及发光器件技术领域，特别是涉及一种有机电致发光器件及其制备方法。
背景技术
有机电致发光是指有机发光材料在电流或者电场的激发作用下发光的现象。有机电致发光器件(OLED，Organic Light-Emitting Diode)具有主动发光、发光效率高、反应时间快(1μs量级)、工作电压低(3v～10v)、视角广(＞175°以上)、面板厚度薄(＜1mm)、功耗低、工作温度范围广(﹣40℃～﹢85℃)以及可以实现柔性显示等诸多优点，因此引起了广泛的关注。
传统的有机电致发光器件导入量产后，寿命下降严重，LT97的寿命往往低于180小时，不利于应用。
发明内容
基于此，有必要针对传统的有机电致发光器件的寿命下降严重问题，提供一种能够提升寿命的有机电致发光器件及其制备方法。
根据本发明的一个方面，提供了一种有机电致发光器件，包括：空穴注入层，包括第一掺杂层或者第二掺杂层，其中，所述第一掺杂层包括P-型掺杂物，所述第二掺杂层包括P-型掺杂物和空穴传输材料；空穴传输层，形成于所述空穴注入层上；以及电子阻挡层，形成于所述空穴传输层上；其中，所述电子阻挡层与所述空穴传输层的HOMO能级差小于或者等于0.2eV。
上述有机电致发光器件中，第一掺杂层中的P-型掺杂物可以提高空穴注入量，从而提升量产器件的寿命；第二掺杂层中，通过调节P-型掺杂物的掺杂浓度，能够控制空穴的注入量，从而调节电子和空穴的平衡性，进而提升量产器件的寿命。同时，电子阻挡层与空穴传输层的HOMO能级差小于或者等于0.2eV，能够降低有机电致发光器件的功耗，从而提升量产器件的寿命。
在其中一个实施例中，在所述第二掺杂层中，所述P-型掺杂物的掺杂浓度为3wt％～8wt％。
在其中一个实施例中，所述空穴注入层包括所述第一掺杂层和形成于所述第一掺杂层上的所述第二掺杂层，所述第二掺杂层靠近所述空穴传输层。
在其中一个实施例中，所述空穴注入层包括所述第二掺杂层和形成于所述第二掺杂层上的所述第一掺杂层，所述第一掺杂层靠近所述空穴传输层。
在其中一个实施例中，当所述空穴注入层仅包括所述第一掺杂层时，所述第一掺杂层的厚度为5nm～20nm；当所述空穴注入层仅包括所述第二掺杂层时，所述第二掺杂层的厚度为10nm～30nm；当所述空穴注入层同时包括所述第一掺杂层和所述第二掺杂层时，所述第一掺杂层的厚度为1nm～10nm，所述第二掺杂层的厚度为10nm～20nm。
在其中一个实施例中，所述P-型掺杂物选自NDP-2和NDP-9中的至少一种。
在其中一个实施例中，所述空穴传输材料和所述空穴传输层的材料独立选自式(1)和式(2)所示结构中的至少一种：
Figure PCTCN2018088066-appb-000001
其中，式(1)中A和B分别独立地选自苯基、萘基或苯胺基；
R1、R2、R3、R4、R5、R6、R7、R8、R15、R16、R17和R18分别独立地选自氢元素、卤族元素、CN、NO 2、氨基、C6-C30亚稠环芳基、C6～C30的亚稠杂环芳基、C6～C20的烷基和C6～C30的醇基中的一种；
R9、R10、R11和R12分别独立地选自氢元素和C6～C30的芳基中的一种；
式(2)中A1和A2分别独立地选自C6～C30芳基和取代或未取代的C6～C30 杂环芳基中的一种，R1’选自氢元素、烷基、烷氧基和盐基中的一种；
并且，式(2)同时满足以下条件：A1和A2中的至少一个具有缩环构造。
在其中一个实施例中，所述电子阻挡层的材料选自式(3)、式(4)、式(5)和式(6)所示结构的茚并芴衍生物中的至少一种：
Figure PCTCN2018088066-appb-000002
其中，A和B分别独立地选自苯基、萘基和苯胺基中的一种；
R9、R10、R11和R12分别独立地选自氢元素和C6～C30的芳基中的一种；
R13选自C1～C6烷基和羟基中的一种。
在其中一个实施例中，所述有机电致发光器件为共用蓝光电子阻挡层的有机电致发光器件。
根据本发明的另一个方面，还提供了一种有机电致发光器件的制备方法，包括以下步骤：形成空穴注入层，所述空穴注入层包括第一掺杂层和/或第二掺杂层，其中，所述第一掺杂层包括P-型掺杂物，所述第二掺杂层包括P-型掺杂物和空穴传输材料；在所述空穴注入层上形成空穴传输层；以及在所述空穴传输层上形成电子阻挡层，其中，所述电子阻挡层与所述空穴传输层的HOMO能 级差小于或者等于0.2eV。
采用上述有机电致发光器件的制备方法得到的有机电致发光器件中，第一掺杂层中的P-型掺杂物可以提高空穴注入量，从而提升量产器件的寿命；第二掺杂层中，通过调节P-型掺杂物的掺杂浓度，能够控制空穴的注入量，从而调节电子和空穴的平衡性，进而提升量产器件的寿命。同时，电子阻挡层与空穴传输层的HOMO能级差小于或者等于0.2eV，能够降低有机电致发光器件的功耗，从而提升量产器件的寿命。
附图说明
图1为根据本发明的一种实施方式的有机电致发光器件的制备方法的流程图；
图2为实施例1的有机电致发光器件的示意图；
图3为实施例2的有机电致发光器件的示意图；
图4为实施例5的有机电致发光器件的示意图；
图5为实施例6的有机电致发光器件的示意图。
具体实施方式
为使本发明的上述目的、特征和优点能够更加明显易懂，下面结合附图对本发明的具体实施方式做详细的说明。在下面的描述中阐述了很多具体细节以便于充分理解本发明。但是本发明能够以很多不同于在此描述的其它方式来实施，本领域技术人员可以在不违背本发明内涵的情况下做类似改进，因此本发明不受下面公开的具体实施例的限制。
本发明的一种有机电致发光器件，其包括：空穴注入层，包括第一掺杂层和/或第二掺杂层；其中，第一掺杂层包括P-型掺杂物；第二掺杂层包括P-型掺杂物和空穴传输材料；空穴传输层，形成于空穴注入层上；以及电子阻挡层，形成于空穴传输层上；其中，电子阻挡层与空穴传输层的HOMO(最高占据分子轨道)能级差小于或者等于0.2eV。
实施方式一的有机电致发光器件包括阳极和依序形成在阳极上的空穴注入 层、空穴传输层、电子阻挡层、有机发光层、电子传输层以及阴极。
其中，空穴注入层包括第一掺杂层。第一掺杂层包括P-型掺杂物。P-型掺杂物可以提高空穴注入量，从而提升量产器件的寿命。
在前述实施方式的基础上，空穴注入层仅包括第一掺杂层。第一掺杂层由P-型掺杂物组成。此时，第一掺杂层中只含有P-型掺杂物，更有利于提高空穴的注入量，从而提升量产器件的寿命。需要说明的是，该实施方式中的P-型掺杂物中可包含少量化学计量范围内的杂质，这些杂质可忽略不计。
在前述实施方式的基础上，P-型掺杂物选自NDP-2和NDP-9中的至少一种。NDP-2和NDP-9均购自Novaled公司，其中NDP-9的结构式如下：
Figure PCTCN2018088066-appb-000003
这类掺杂材料能够注入大量的空穴，从而减小阳极与空穴传输层之间的能级差，从而有利于空穴传递至空穴传输层。当然，P-型掺杂物并不限于上述实施方式，亦可选自其它能够起到减小阳极与空穴传输层之间能级差的材料。
在前述实施方式的基础上，第一掺杂层的厚度为5nm～20nm。当第一掺杂层的厚度为5nm～20nm时，一方面，能够有效覆盖阳极表面，从而消除阳极表面粗糙引起的缺陷；另一方面，能够调控空穴的注入量，更有利于空穴传递至有机发光层，与电子进行复合发光。
需要说明的是，当空穴注入层包括第一掺杂层时，第一掺杂层可以为一层P-型掺杂物，亦可以为两层或者两层以上的不同的P-型掺杂物的叠加。
空穴传输层形成于空穴注入层上。电子阻挡层形成于空穴传输层上。其中，空穴传输层与电子阻挡层的HOMO能级差小于或者等于0.2eV。能够降低有机 电致发光器件的功耗，从而提升量产器件的寿命。
在前述实施方式的基础上，空穴传输层的材料选自式(1)和式(2)所示结构中的至少一种：
Figure PCTCN2018088066-appb-000004
其中，式(1)中A和B独立选自苯基、萘基或苯胺基；
R1、R2、R3、R4、R5、R6、R7、R8、R15、R16、R17和R18分别独立地选自氢元素、卤族元素、CN、NO 2、氨基、C6-C30亚稠环芳基、C6～C30的亚稠杂环芳基、C6～C20的烷基和C6～C30的醇基中的一种；
R9、R10、R11和R12分别独立地选自氢元素和C6～C30的芳基中的一种；
式(2)中A1和A2分别独立地选自C6～C30芳基和取代或未取代的C6～C30杂环芳基中的一种，R1’选自氢元素、烷基、烷氧基和盐基中的一种；
并且，式(2)同时满足以下条件：A1和A2中的至少一个具有缩环构造，即A1和A2中至少有一个具有环状结构，且该环状结构具有不饱和键。
在前述实施方式的基础上，空穴传输层的材料选自式(HTL1-1)-(HTL1-10)所示结构的至少一种：
Figure PCTCN2018088066-appb-000005
Figure PCTCN2018088066-appb-000006
上述空穴传输层的材料具有好的传输特性，迁移率比较高，能够缩短与电子阻挡层的HOMO能级差，更有利于空穴的传递与传输。此外，上述空穴传输层的材料本身性能比较稳定，可以制备得到性能比较稳定的器件。
需要说明的是，空穴传输层的材料不限于此，亦可选自其它能够起到相同作用的材料。
在前述实施方式的基础上，空穴传输层的厚度为10nm～100nm。当空穴传输层的厚度为10nm～100nm时，更有利于空穴传输与光学微腔的调节。
在前述实施方式的基础上，电子阻挡层的材料选自式(3)、式(4)、式(5)和式(6)所示结构的茚并芴衍生物中的至少一种：
Figure PCTCN2018088066-appb-000007
其中，A和B分别独立地选自苯基、萘基和苯胺基中的一种；
R9、R10、R11和R12分别独立地选自氢元素和C6～C30的芳基中的一种；
R13选自C1～C6烷基和羟基中的一种。
在前述实施方式的基础上，电子阻挡层的材料选自以下的分子式化合物EBL2-1到EBL2-12中的至少一种：
Figure PCTCN2018088066-appb-000008
Figure PCTCN2018088066-appb-000009
上述电子阻挡层的材料的LUMO能级的绝对值小于有机发光层的LUMO能级的绝对值，从而能够将电子阻挡在有机发光层，以提升效率。
需要说明的是，电子阻挡层的材料不限于此，亦可选自其它能够起到相同作用的材料。
在前述实施方式的基础上，电子阻挡层的厚度为1nm～10nm。当电子阻挡层的厚度为1nm～10nm时，可以有效阻挡电子传出发光层，同时控制器件的电压。在前述实施方式的基础上，有机电致发光器件为共用蓝光电子阻挡层的有机电致发光器件。此时，一方面，共用蓝光电子阻挡层能够增加红光和蓝光的 补偿；另一方面，制备这种共用蓝光电子阻挡层的有机电致发光器件时，由于蓝光电子阻挡层为共用层，因此，蒸镀时只需使用普通金属遮罩(CMM)即可，而无需使用精密金属遮罩(FMM)，从而有利于简化生产工艺难度。
实施方式一的有机电致发光器件中，空穴注入层包括第一掺杂层，第一掺杂层包括P-型掺杂物。P-型掺杂物可以增大空穴注入量，有利于提升寿命。
实施方式二的有机电致发光器件与实施方式一的有机电致发光器件的区别在于：空穴注入层包括第二掺杂层。第二掺杂层包括P-型掺杂物和空穴传输材料。通过调节P-型掺杂物的掺杂浓度，能够控制空穴的注入量，从而调节电子和空穴的平衡性，进而提升量产器件的寿命。
在前述实施方式的基础上，空穴注入层由第二掺杂层组成。第二掺杂层由P-型掺杂物和空穴传输材料组成。此时，第二掺杂层中只含有P-型掺杂物和空穴传输材料，更有利于控制空穴的注入量，从而调节电子和空穴的平衡性，进而提升量产器件的寿命。需要说明的是，该实施方式中的P-型掺杂物和空穴传输材料中均可包含少量化学计量范围内的杂质，这些杂质可忽略不计。
在前述实施方式的基础上，第二掺杂层中，P-型掺杂物的掺杂浓度为3wt％～8wt％。当P-型掺杂物的掺杂浓度为3wt％～8wt％时，可以有效调节器件寿命和效率的平衡性。
在前述实施方式的基础上，第二掺杂层的厚度为10nm～30nm。当第二掺杂层的厚度为10nm～30nm时，能够保证空穴的注入，从而有效调节器件寿命和效率的平衡性。
在前述实施方式的基础上，空穴传输材料选自式(1)和式(2)所示结构中的至少一种：
Figure PCTCN2018088066-appb-000010
其中，式(1)中A和B分别独立地选自苯基、萘基或苯胺基；
R1、R2、R3、R4、R5、R6、R7、R8、R15、R16、R17和R18分别独立地选自氢元素、卤族元素、CN、NO 2、氨基、C6-C30亚稠环芳基、C6～C30的亚稠杂环芳基、C6～C20的烷基和C6～C30的醇基中的一种；
R9、R10、R11和R12分别独立地选自氢元素和C6～C30的芳基中的一种；
式(2)中A1和A2分别独立地选自C6～C30芳基和取代或未取代的C6～C30杂环芳基中的一种，R1’选自氢元素、烷基、烷氧基和盐基中的一种；
并且，式(2)同时满足以下条件：A1和A2中的至少一个具有缩环构造。
在前述实施方式的基础上，空穴传输材料选自式(HTL1-1)-(HTL1-10)所示结构的至少一种：
Figure PCTCN2018088066-appb-000011
Figure PCTCN2018088066-appb-000012
上述空穴传输材料具有好的传输特性，迁移率比较高，更有利于空穴的传递与传输。此外，上述空穴传输材料本身性能比较稳定，可以制备得到性能比较稳定的器件。
需要说明的是，空穴传输材料不限于此，亦可选自其它能够起到相同作用的材料。
此外需要说明的是，在同一个有机电致发光器件中，第二掺杂层的空穴传输材料与空穴传输层的材料可以相同，亦可以不同。
此外，当空穴注入层包括第二掺杂层时，第二掺杂层可以为一层，亦可以为两层或者两层以上，且每层的掺杂浓度可以相同或者不同。
实施方式二的有机电致发光器件中，由于掺杂了低浓度的较贵的P-型掺杂物，因此生产成本较低，此外，能够调节掺杂浓度来控制器件性能，能够简化量产的工艺，有利于提高产能。
实施方式三的有机电致发光器件与实施方式一、实施方式二的有机电致发光器件的区别在于：空穴注入层包括第一掺杂层和和形成于第一掺杂层上的第二掺杂层，第二掺杂层靠近空穴传输层。
在前述实施方式的基础上，第一掺杂层的厚度为1nm～10nm，第二掺杂层的厚度为10nm～20nm。
实施方式三的有机电致发光器件能够调节空穴的注入量，同时提升器件的 效率和寿命。实施方式四的有机电致发光器件与实施方式三的有机电致发光器件的区别在于：空穴注入层包括第二掺杂层和形成于第二掺杂层上的第一掺杂层，第一掺杂层靠近空穴传输层。
在前述实施方式的基础上，第一掺杂层的厚度为1nm～10nm，第二掺杂层的厚度为10nm～20nm。
实施方式四的有机电致发光器件能够调节空穴的注入量，同时提升器件的效率和寿命。
需要说明的是，当空穴注入层包括第一掺杂层和第二掺杂层时，第一掺杂层和第二掺杂层的层数可以任意设置，二者之间的位置亦任意层叠设置，例如，第一掺杂层和第二掺杂层可以交替层叠设置，亦可以非交替层叠设置。
上述有机电致发光器件中，第一掺杂层中的P-型掺杂物可以提高空穴注入量，从而提升量产器件的寿命；第二掺杂层中，通过调节P-型掺杂物的掺杂浓度，能够控制空穴的注入量，从而调节电子和空穴的平衡性，进而提升量产器件的寿命。同时，电子阻挡层与空穴传输层的HOMO能级差小于或者等于0.2eV，能够降低有机电致发光器件的功耗，从而提升量产器件的寿命。
请参见图1，一实施方式的有机电致发光器件的制备方法，包括以下步骤：
S10、形成空穴注入层，空穴注入层包括第一掺杂层和/或第二掺杂层；其中，第一掺杂层包括P-型掺杂物，第二掺杂层包括P-型掺杂物和空穴传输材料。
S20、在步骤S10的空穴注入层上形成空穴传输层。
利用蒸镀的方式在空穴注入层上形成空穴传输层。
S30、在步骤S20的空穴传输层上形成电子阻挡层；其中，电子阻挡层与空穴传输层的HOMO能级差小于或者等于0.2eV。
利用蒸镀的方式在空穴传输层上形成电子阻挡层。
采用上述有机电致发光器件的制备方法得到的有机电致发光器件中，第一掺杂层中的P-型掺杂物可以提高空穴注入量，从而提升量产器件的寿命；第二掺杂层中，通过调节P-型掺杂物的掺杂浓度，能够控制空穴的注入量，从而调节电子和空穴的平衡性，进而提升量产器件的寿命。同时，电子阻挡层与空穴传输层的HOMO能级差小于或者等于0.2eV，能够降低有机电致发光器件的功 耗，从而提升量产器件的寿命。
下面结合具体实施例和附图对本发明的有机电致发光器件进行进一步的说明。
实施例1
请参见图2，实施例1的有机电致发光器件100包括阳极110和依序形成在阳极110上的空穴注入层120、空穴传输层130、电子阻挡层140、有机发光层150、电子传输层160以及阴极170。
其中，空穴注入层120由第一掺杂层组成。第一掺杂层由NDP-9组成。空穴传输层130的材料为HTL1-2(结构如前面所示)。电子阻挡层140的材料为EBL2-2(结构如前面所示)。本实施例中，空穴传输层130与电子阻挡层140的能级差为0.15eV。
此外，阳极110、电子阻挡层140、有机发光层150、电子传输层160以及阴极170的材料依序为ITO、EBL2-2(结构如前面所示)、Ir(ppy) 3、ETL1-1(结构如前面所示)、Mg/Ag。
阳极110、空穴注入层120、空穴传输层130、电子阻挡层140、有机发光层150、电子传输层160以及阴极170的厚度依序为10nm、10nm、100nm、5nm、30nm、30nm和20nm。
实施例2
请参见图3，实施例2的有机电致发光器件200包括阳极210和依序形成在阳极210上的空穴注入层220、空穴传输层230、电子阻挡层240、有机发光层250、电子传输层260以及阴极270。
其中，空穴注入层220由第二掺杂层组成。第二掺杂层由NDP-9和HTL1-2(结构如前面所示)组成，第二掺杂层中，P-型掺杂物的掺杂浓度为3wt％。
空穴传输层230的材料为HTL1-2(结构如前面所示)。电子阻挡层240的材料为EBL2-2(结构如前面所示)。本实施例中，空穴传输层230与电子阻挡层240的能级差为0.15eV。
此外，阳极210、电子阻挡层240、有机发光层250、电子传输层260以及阴极270的材料依序为ITO、EBL2-2(结构如前面所示)、Ir(ppy) 3、ETL1-1 (结构如前面所示)、Mg/Ag。
阳极210、空穴注入层220、空穴传输层230、电子阻挡层240、有机发光层250、电子传输层260以及阴极270的厚度依序为10nm、10nm、100nm、5nm、30nm、30nm和20nm。
实施例3
本实施例与实施例2的区别在于：第二掺杂层中，P-型掺杂物的掺杂浓度为5wt％。
实施例4
本实施例与实施例2的区别在于：第二掺杂层中，P-型掺杂物的掺杂浓度为7wt％。
实施例5
请参见图4，实施例5的有机电致发光器件300包括阳极310和依序形成在阳极310上的空穴注入层320、空穴传输层330、电子阻挡层340、有机发光层350、电子传输层360以及阴极370。
其中，空穴注入层320包括第一掺杂层321和第二掺杂层322。第一掺杂层321形成于阳极310上，第二掺杂层322形成于第一掺杂层321上。第一掺杂层321由NDP-9组成。第二掺杂层322由NDP-9和HTL1-2(结构如前面所示)组成，第二掺杂层322中，P-型掺杂物的掺杂浓度为5wt％。
空穴传输层330的材料为HTL1-2(结构如前面所示)。电子阻挡层340的材料为EBL2-2(结构如前面所示)。本实施例中，空穴传输层330与电子阻挡层340的能级差为0.15eV。
此外，阳极310、电子阻挡层340、有机发光层350、电子传输层360以及阴极370的材料依序为ITO、EBL2-2(结构如前面所示)、Ir(ppy) 3、ETL1-1(结构如前面所示)、Mg/Ag。
阳极310、空穴注入层320、空穴传输层330、电子阻挡层340、有机发光层350、电子传输层360以及阴极370的厚度依序为10nm、20nm、100nm、5nm、30nm、30nm和20nm。其中，第一掺杂层321和第二掺杂层322的厚度分别为10nm和10nm。
实施例6
请参见图5，实施例6的有机电致发光器件400包括阳极410和依序形成在阳极410上的空穴注入层420、空穴传输层430、电子阻挡层440、有机发光层450、电子传输层460以及阴极470。
其中，空穴注入层420包括第一掺杂层421和第二掺杂层422。第二掺杂层422形成于阳极410上，第一掺杂层421形成于第二掺杂层422上。第一掺杂层321由NDP-9组成。第二掺杂层422由NDP-9和HTL1-2(结构如前面所示)组成，第二掺杂层422中，P-型掺杂物的掺杂浓度为5wt％。
空穴传输层430的材料为HTL1-2(结构如前面所示)。电子阻挡层440的材料为EBL2-2(结构如前面所示)。本实施例中，空穴传输层430与电子阻挡层440的能级差为0.15eV。
此外，阳极410、电子阻挡层440、有机发光层450、电子传输层460以及阴极470的材料依序为ITO、EBL2-2(结构如前面所示)、Ir(ppy) 3、ETL1-1(结构如前面所示)、Mg/Ag。
阳极410、空穴注入层420、空穴传输层430、电子阻挡层440、有机发光层450、电子传输层460以及阴极470的厚度依序为10nm、20nm、100nm、5nm、30nm、30nm和20nm。第一掺杂层421和第二掺杂层422的厚度分别为10nm和10nm。
实施例7
参照实施例1中有机电致发光器件400的结构，本实施例与实施例1的区别在于：第一掺杂层由NDP-2组成。
对比例1
对比例1与实施例2的区别在于：空穴注入层中不含有P-型掺杂物，只由HAT-CN组成。
测试实验
对实施例1～7和对比例1的有机电致发光器件进行测试，测试条件为：在1000nit亮度下。光电性能如下表：
Figure PCTCN2018088066-appb-000013
通过上述测试结果可以看出：
首先，实施例1～7和对比例1的色度(CIE)和亮度均相近，这表明上述测试结果的数值进行比较有意义。
其次，在相同的测试条件下，对比例1的电流效率为112.05，实施例1和7的电流效率与对比例1相近，分别为110.95和110.15，能满足有机电致发光器件对电流效率的要求。而本发明实施例2～6的电流效率依次为112.72、114.76、113.61、113.15和112.56。也就是说，本发明实施例2～6的电流效率均大于对比例1的电流效率。这表明，本发明实施例2、3、4、5和6的有机电致发光器件的电流效率较高。
再次，在相同的测试条件下，对比例1的LT97为500h，而本发明实施例1～7的LT97均大于1000h。也就是说，本发明实施例1～7的LT97为对比例1 的LT97的两倍以上。这表明，本发明实施例1～7的有机电致发光器件的寿命较长。
综上所述，本发明的有机电致发光器件不仅电流效率较高，而且寿命较长，满足量产的需求，更有利于应用。
以上所述实施例的各技术特征可以进行任意的组合，为使描述简洁，未对上述实施例中的各个技术特征所有可能的组合都进行描述，然而，只要这些技术特征的组合不存在矛盾，都应当认为是本说明书记载的范围。
以上所述实施例仅表达了本发明的几种实施方式，其描述较为具体和详细，但并不能因此而理解为对发明专利范围的限制。应当指出的是，对于本领域的普通技术人员来说，在不脱离本发明构思的前提下，还可以做出若干变形和改进，这些都属于本发明的保护范围。因此，本发明专利的保护范围应以所附权利要求为准。

Claims (10)

  1. 一种有机电致发光器件，其特征在于，包括：
    空穴注入层，包括第一掺杂层和/或第二掺杂层，其中，所述第一掺杂层包括P-型掺杂物，所述第二掺杂层包括P-型掺杂物和空穴传输材料；
    空穴传输层，形成于所述空穴注入层上；
    以及电子阻挡层，形成于所述空穴传输层上，其中，所述电子阻挡层与所述空穴传输层的HOMO能级差小于或者等于0.2eV。
  2. 根据权利要求1所述的有机电致发光器件，其中，在所述第二掺杂层中，所述P-型掺杂物的掺杂浓度为3wt％～8wt％。
  3. 根据权利要求1所述的有机电致发光器件，其中，所述空穴注入层包括所述第一掺杂层和形成于所述第一掺杂层上的所述第二掺杂层，所述第二掺杂层靠近所述空穴传输层。
  4. 根据权利要求1所述的有机电致发光器件，其中，所述空穴注入层包括所述第二掺杂层和形成于所述第二掺杂层上的所述第一掺杂层，所述第一掺杂层靠近所述空穴传输层。
  5. 根据权利要求1所述的有机电致发光器件，其中，当所述空穴注入层仅包括所述第一掺杂层时，所述第一掺杂层的厚度为5nm～20nm；
    当所述空穴注入层仅包括所述第二掺杂层时，所述第二掺杂层的厚度为10nm～30nm；
    当所述空穴注入层同时包括所述第一掺杂层和所述第二掺杂层时，所述第一掺杂层的厚度为1nm～10nm，所述第二掺杂层的厚度为10nm～20nm。
  6. 根据权利要求1所述的有机电致发光器件，其中，所述P-型掺杂物选自NDP-2和NDP-9中的至少一种。
  7. 根据权利要求1所述的有机电致发光器件，其中，所述空穴传输材料和所述空穴传输层的材料独立选自式(1)和式(2)所示结构中的至少一种：
    Figure PCTCN2018088066-appb-100001
    其中，式(1)中A和B分别独立地选自苯基、萘基或苯胺基；
    R1、R2、R3、R4、R5、R6、R7、R8、R15、R16、R17和R18分别独立地选自氢元素、卤族元素、CN、NO 2、氨基、C6-C30亚稠环芳基、C6～C30的亚稠杂环芳基、C6～C20的烷基和C6～C30的醇基中的一种；
    R9、R10、R11和R12分别独立地选自氢元素和C6～C30的芳基中的一种；
    式(2)中A1和A2分别独立地选自C6～C30芳基和取代或未取代的C6～C30杂环芳基中的一种，R1’选自氢元素、烷基、烷氧基和盐基中的一种；
    并且，式(2)同时满足以下条件：A1和A2中的至少一个具有缩环构造。
  8. 根据权利要求1所述的有机电致发光器件，其中，所述电子阻挡层的材料选自式(3)、式(4)、式(5)和式(6)所示结构的茚并芴衍生物中的至少一种：
    Figure PCTCN2018088066-appb-100002
    Figure PCTCN2018088066-appb-100003
    其中，A和B分别独立地选自苯基、萘基和苯胺基中的一种；
    R9、R10、R11和R12分别独立地选自氢元素和C6～C30的芳基中的一种；
    R13选自C1～C6烷基和羟基中的一种。
  9. 根据权利要求1所述的有机电致发光器件，其中，所述有机电致发光器件为共用蓝光电子阻挡层的有机电致发光器件。
  10. 一种有机电致发光器件的制备方法，其中，包括以下步骤：
    形成空穴注入层，所述空穴注入层包括第一掺杂层和/或第二掺杂层，其中，所述第一掺杂层包括P-型掺杂物，所述第二掺杂层包括P-型掺杂物和空穴传输材料；
    在所述空穴注入层上形成空穴传输层；
    以及在所述空穴传输层上形成电子阻挡层，其中，所述电子阻挡层与所述空穴传输层的HOMO能级差小于或者等于0.2eV。
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