WO2019100432A1 - 一种mems麦克风 - Google Patents

一种mems麦克风 Download PDF

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Publication number
WO2019100432A1
WO2019100432A1 PCT/CN2017/113952 CN2017113952W WO2019100432A1 WO 2019100432 A1 WO2019100432 A1 WO 2019100432A1 CN 2017113952 W CN2017113952 W CN 2017113952W WO 2019100432 A1 WO2019100432 A1 WO 2019100432A1
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WIPO (PCT)
Prior art keywords
diaphragm
mems microphone
microphone according
sealed chamber
pressure
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Ceased
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PCT/CN2017/113952
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English (en)
French (fr)
Inventor
邹泉波
王喆
董永伟
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Goertek Inc
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Goertek Inc
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Publication date
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Priority to KR1020187001523A priority Critical patent/KR102128668B1/ko
Priority to JP2018502717A priority patent/JP6703089B2/ja
Priority to EP17832031.3A priority patent/EP3518558B1/en
Priority to US15/751,191 priority patent/US20200204925A1/en
Publication of WO2019100432A1 publication Critical patent/WO2019100432A1/zh
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

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    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04R—LOUDSPEAKERS, MICROPHONES, GRAMOPHONE PICK-UPS OR LIKE ACOUSTIC ELECTROMECHANICAL TRANSDUCERS; ELECTRIC HEARING AIDS; PUBLIC ADDRESS SYSTEMS
    • H04R7/00—Diaphragms for electromechanical transducers; Cones
    • H04R7/02—Diaphragms for electromechanical transducers; Cones characterised by the construction
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04R—LOUDSPEAKERS, MICROPHONES, GRAMOPHONE PICK-UPS OR LIKE ACOUSTIC ELECTROMECHANICAL TRANSDUCERS; ELECTRIC HEARING AIDS; PUBLIC ADDRESS SYSTEMS
    • H04R19/00—Electrostatic transducers
    • H04R19/005—Electrostatic transducers using semiconductor materials
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04R—LOUDSPEAKERS, MICROPHONES, GRAMOPHONE PICK-UPS OR LIKE ACOUSTIC ELECTROMECHANICAL TRANSDUCERS; ELECTRIC HEARING AIDS; PUBLIC ADDRESS SYSTEMS
    • H04R1/00—Details of transducers, loudspeakers or microphones
    • H04R1/02—Casings; Cabinets ; Supports therefor; Mountings therein
    • H04R1/04—Structural association of microphone with electric circuitry therefor
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04R—LOUDSPEAKERS, MICROPHONES, GRAMOPHONE PICK-UPS OR LIKE ACOUSTIC ELECTROMECHANICAL TRANSDUCERS; ELECTRIC HEARING AIDS; PUBLIC ADDRESS SYSTEMS
    • H04R1/00—Details of transducers, loudspeakers or microphones
    • H04R1/20—Arrangements for obtaining desired frequency or directional characteristics
    • H04R1/22—Arrangements for obtaining desired frequency or directional characteristics for obtaining desired frequency characteristic only 
    • H04R1/28—Transducer mountings or enclosures modified by provision of mechanical or acoustic impedances, e.g. resonator, damping means
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04R—LOUDSPEAKERS, MICROPHONES, GRAMOPHONE PICK-UPS OR LIKE ACOUSTIC ELECTROMECHANICAL TRANSDUCERS; ELECTRIC HEARING AIDS; PUBLIC ADDRESS SYSTEMS
    • H04R19/00—Electrostatic transducers
    • H04R19/04—Microphones
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04R—LOUDSPEAKERS, MICROPHONES, GRAMOPHONE PICK-UPS OR LIKE ACOUSTIC ELECTROMECHANICAL TRANSDUCERS; ELECTRIC HEARING AIDS; PUBLIC ADDRESS SYSTEMS
    • H04R2201/00—Details of transducers, loudspeakers or microphones covered by H04R1/00 but not provided for in any of its subgroups
    • H04R2201/003—Mems transducers or their use

Definitions

  • the present invention relates to the field of acoustic electricity, and more particularly to a microphone, and more particularly to a MEMS microphone.
  • MEMS Micro Electro Mechanical System
  • the diaphragm and the back pole are important components in the MEMS microphone.
  • the diaphragm and the back electrode form a capacitor integrated on the silicon wafer to realize the conversion of acoustic and electric power. .
  • a through hole is usually provided on the back pole.
  • the through hole forms a damping-like capillary sound absorbing structure which improves the acoustic resistance on the sound transmission path.
  • An increase in acoustic resistance means that the thermal noise of the air causes an increase in the noise floor, which ultimately reduces the SNR.
  • air damping is also generated in the gap between the diaphragm and the back plate, which is another important factor affecting the acoustic impedance of the microphone noise.
  • the above two air dampings are often the main contributors to microphone noise, which is the bottleneck for achieving high signal-to-noise ratio (SNR) microphones.
  • SNR signal-to-noise ratio
  • a dual-diaphragm microphone structure has appeared on the existing market.
  • the two diaphragms of the microphone structure enclose an air-tight sealed cavity, and a central back pole having a perforation is disposed between the two diaphragms.
  • the back pole is located in the sealed cavity of the two diaphragms and forms a differential capacitor structure with the two diaphragms.
  • a support column for supporting the central position of the two diaphragms is also provided.
  • Microphones of this construction are located in the sealed cavity, which has a higher acoustic impedance than conventional microphones and therefore higher noise.
  • the two diaphragms will bulge to the outside, and vice versa, the two diaphragms will deform toward the back pole.
  • This change in static ambient pressure can affect the performance of the microphone (eg, sensitivity) due to variations in the common mode gap. Especially when the temperature rises, the pressure difference between the surrounding environment and the sealed chamber is large.
  • the arrangement of the support column causes the rigidity of the diaphragm to be large, so that the diaphragm does not well characterize the state of the sound pressure, which reduces the sensitivity of the vibration of the diaphragm, thereby affecting the performance of the microphone to a first extent.
  • a MEMS microphone comprising:
  • first diaphragm a first diaphragm, a second diaphragm, and a sealed cavity formed between the first diaphragm and the second diaphragm;
  • the back pole unit is located in the sealed cavity and forms a capacitor structure with the first diaphragm and the second diaphragm, and the back pole unit is provided with a plurality of through holes penetrating the two sides thereof;
  • the sealed cavity is filled with a gas having a viscosity coefficient smaller than that of air.
  • the gas is isobutane, propane, propylene, H 2 , ethane, ammonia, acetylene, ethyl chloride, ethylene, CH 3 Cl, methane, SO 2 , H 2 S, chlorine, CO 2 , At least one of N 2 O and N 2 .
  • the sealed chamber is in accordance with the pressure of the external environment.
  • the pressure of the sealed chamber is one standard atmospheric pressure.
  • the pressure difference between the sealed chamber and the external environment is less than 0.5 atm.
  • the pressure difference between the sealed chamber and the external environment is less than 0.1 atm.
  • a gap between the first diaphragm and the second diaphragm and the back pole unit is 0.5-3 ⁇ m.
  • a support column is further disposed between the first diaphragm and the second diaphragm, the support column passes through a through hole in the back pole unit and has two ends respectively corresponding to the first diaphragm and the second The diaphragms are connected together.
  • the material of the support column is the same as the material of the first diaphragm and/or the second diaphragm.
  • the support column is made of an insulating material.
  • the back pole unit is a back plate, and the back plate and the first diaphragm and the second diaphragm respectively form a capacitor structure.
  • the back pole unit includes a first back plate for forming a capacitor structure with the first diaphragm, and a second back plate for forming a capacitor structure with the second diaphragm;
  • An insulating layer is disposed between the back plate and the second back plate.
  • the sealed chamber is sealed under normal temperature and atmospheric conditions.
  • a pressure relief hole penetrating the first diaphragm and the second diaphragm is further included, and the hole wall of the pressure relief hole and the first diaphragm and the second diaphragm enclose the sealed cavity.
  • the pressure relief hole is provided with one located at a middle position of the first diaphragm and the second diaphragm; or, the pressure relief hole is provided with a plurality of.
  • the MEMS microphone of the present invention can greatly reduce the acoustic resistance of the two diaphragms when moving relative to the back pole by filling a gas with a viscosity coefficient smaller than that of the air in the sealed chamber, thereby reducing the noise of the microphone.
  • the filling with a gas with a low viscosity coefficient makes it possible to make the pressure in the sealed chamber consistent with the pressure of the external environment, avoiding the deflection of the diaphragm caused by the pressure difference, and ensuring the performance of the microphone.
  • FIG. 1 is a schematic view showing the structure of a first embodiment of a microphone of the present invention.
  • FIG. 2 is a schematic view showing the structure of a second embodiment of the microphone of the present invention.
  • FIG 3 is a schematic structural view of a third embodiment of the microphone of the present invention.
  • a MEMS microphone provided by the present invention is a dual diaphragm microphone structure.
  • the substrate 1 and the first diaphragm 3, the second diaphragm 2, and the back pole unit formed on the substrate 1 are included.
  • the diaphragm and the back pole unit of the present invention can be formed on the substrate 1 by deposition or etching.
  • the substrate 1 can be made of a single crystal silicon material, and the diaphragm and the back pole unit can be made of single crystal silicon or polysilicon material. The selection of such materials and the process of deposition are well known to those skilled in the art and will not be specifically described herein.
  • a central portion of the substrate 1 is provided with a back cavity.
  • an insulating layer is provided at a position where the second diaphragm 2 and the substrate 1 are connected, and the insulating layer may be well known to those skilled in the art. Silica material.
  • the back pole unit of the present invention is a back plate 4, and a plurality of through holes 5 penetrating the both sides thereof are disposed on the back plate 4.
  • the back plate 4 can be supported and connected to the second diaphragm 2 through the first support portion 9 such that there is a certain gap between the back plate 4 and the second diaphragm 2, which constitute a capacitor structure.
  • the first diaphragm 3 can be supported and connected to the back plate 4 via the second support portion 8 such that there is a certain gap between the first diaphragm 3 and the back plate 4, which constitute a capacitor structure.
  • the first support portion 9 and the second support portion 8 are made of an insulating material, which can support the insulation between the two diaphragms and the back plate. This type of construction and selection of materials are well known to those skilled in the art and will not be described in detail herein.
  • the back plate 4 is disposed between the first diaphragm 3 and the second diaphragm 2, and the three constitute a sandwich-like structure.
  • the two capacitor structures formed above may constitute a differential capacitor structure to improve the accuracy of the microphone, which is a structural feature of the dual diaphragm microphone, and will not be specifically described herein.
  • the back plate 4 is disposed at a central position of the first diaphragm 3 and the second diaphragm 2. That is, the distance from the back plate 4 to the first diaphragm 3 is equal to the distance from the back plate 4 to the second diaphragm 2.
  • the distance between the back plate 4 and the two diaphragms may be respectively 0.5-3 ⁇ m, which will not be specifically described herein.
  • a sealed cavity a is formed between the first diaphragm 3 and the second diaphragm 2, with reference to FIG.
  • the upper and lower sides of the sealing cavity a are the first diaphragm 3 and the second diaphragm 2
  • the left and right sides are the first support portion 9 and the second support portion 8, which together form a sealed Seal cavity a.
  • deposition and etching may be performed by a conventional MEMS process, and then the inner sacrificial layer may be etched away by an etching hole provided on the first diaphragm 3 to release the first diaphragm 3, Two diaphragms 2. Finally, the etching hole on the first diaphragm 3 is sealed to form a sealed cavity a.
  • the etching hole may be disposed on the second diaphragm 2.
  • the etching holes may also be provided on the first support portion 9 and the second support portion 8 if the process permits.
  • the etching hole can be sealed to form a sealed sealed chamber a.
  • a clogging portion may be formed at an edge of the sealing chamber a to seal the corrosion hole provided at the edge of the sealing chamber a.
  • the sealed chambers a separated by the back plates 4 can communicate with each other through the through holes 5.
  • the sealed chamber a is filled with a gas having a viscosity coefficient smaller than that of air.
  • the viscous coefficient characterizes the internal friction generated by the interaction of gas molecules during stress, and the viscosity coefficient is usually related to temperature and pressure. Therefore, a gas having a viscosity coefficient smaller than air refers to a gas having a viscosity coefficient smaller than that under air under the same conditions.
  • the equivalent condition can be, for example, within the operating conditions of the microphone, such as -20 ° C to 100 ° C, etc. Of course, some microphones need to operate in extreme environments, depending on the field of microphone application.
  • the viscosity coefficient of air at 0 ° C ⁇ 0 ° C is about 1.73 ⁇ 10 -5 Pa ⁇ s
  • the viscosity coefficient of hydrogen at 0 ° C ⁇ hydrogen 0 ° C is about 0.84 ⁇ 10 -5 Pa ⁇ s is much smaller than the viscosity coefficient of air at 0 °C.
  • the air viscosity coefficient ⁇ air 20 ° C is about 1.82 ⁇ 10 -5 Pa ⁇ s
  • the hydrogen viscosity coefficient ⁇ hydrogen 20 ° C is about 0.88 ⁇ 10 -5 Pa ⁇ s, much smaller than the air Viscosity coefficient at 20 °C.
  • the sealed chamber a can be filled with hydrogen gas, so that the viscosity coefficient of the gas in the sealed chamber a is small, which is equivalent to reducing the acoustic resistance of the two diaphragms when moving relative to the back pole, thereby reducing the noise of the microphone.
  • the gas having a viscosity coefficient lower than that of air is many, and those which are smaller than the air viscosity coefficient under the working conditions of the microphone can be selected, and for example, isobutane, propane, propylene, H 2 , ethane can be selected. At least one of ammonia, acetylene, ethyl chloride, ethylene, CH 3 Cl, methane, SO 2 , H 2 S, chlorine, CO 2 , N 2 O, and N 2 .
  • the viscosity coefficient ⁇ of the gas is directly related to the acoustic resistance Ra of the microphone.
  • the acoustic resistance of the microphone mainly includes the acoustic resistance Ra.gap between the diaphragm and the back plate gap and the acoustic resistance Ra.hole of the position of the through hole on the back plate. among them:
  • Ra.gap 12 ⁇ /( ⁇ ng 3 S mem ) ⁇ (A/2-A 2 /8-lnA/4-3/8); wherein n is the pore density, g is the size of the gap, and S mem is Diaphragm area, A is the area ratio of the through hole to the back plate.
  • Ra.hole 8 ⁇ T / ( ⁇ r 4 N); where T is the thickness of the via, r is the via radius, and N is the total number of vias.
  • the viscosity coefficient ⁇ of the gas is proportional to the acoustic resistance Ra of the microphone, that is, the smaller the viscosity coefficient ⁇ of the gas in the sealed chamber a, the smaller the acoustic resistance Ra of the microphone is. .
  • the noise power spectral density PSD(f) of the microphone is proportional to 4KTRa, where f is the frequency, K is the Boltzmann constant, and T is the temperature (in Kelvin).
  • the noise N (amplitude) in the SNR calculation formula is the square root of the weighted integration of the PSD within the desired frequency bandwidth (eg, 20 Hz-20 kHz). Therefore, the noise N (amplitude) is proportional to the square root of the gas viscosity coefficient ⁇ .
  • Another advantage of using a low viscosity coefficient gas to fill the sealed chamber is that the pressure within the sealed chamber a can be kept consistent with the ambient pressure.
  • Sealing is performed in an atmosphere of hydrogen gas at ambient temperature (room temperature) and atmospheric pressure (or near atmospheric pressure) to compensate for external environmental stress. That is to say, the pressure difference between the sealed sealed chamber a and the external environment is zero, so that the first diaphragm 3 and the second diaphragm 2 can be kept flat during static operation, and the problem of bulging or snagging does not occur.
  • the pressure in the sealed chamber a after the packaging is fixed, but the pressure in the sealed chamber a is as close as possible to the external environmental pressure.
  • the pressure of the sealed chamber a can be selected as a standard. Atmospheric pressure. Therefore, the pressure difference between the sealed chamber a and the external environment can be minimized to reduce the degree of deflection of the diaphragm due to the pressure difference, thereby ensuring the performance (sensitivity) of the microphone.
  • the pressure in the sealed chamber a may be inaccurate with the pressure of the external environment, and the error is preferably less than 0.5 atm (standard atmospheric pressure), and further preferably less than 0.1 atm (standard atmospheric pressure).
  • the support column 6 may be disposed between the two diaphragms, with reference to FIG.
  • the support post 6 passes through the through hole 5 in the back plate 4, and its two ends are connected to the first diaphragm 3 and the second diaphragm 2, respectively.
  • the support column 6 may be provided in plurality, evenly distributed between the two diaphragms, so that when there is a pressure difference between the sealed chamber a and the external environment, the support column 6 connected between the two diaphragms can resist the diaphragm Deflection.
  • the pressure difference between the sealed chamber a and the external environment may be caused by the manufacturing process, the pressure difference caused by such a process error is not large. Or when the microphone is in use, the pressure of its external environment will also change, but this change will not be very large. Therefore, a small number of support columns 6 can be selected, or a support column 6 having a large aspect ratio, that is, an elongated support column 6 can be used for support. This can significantly improve the acoustic performance (sensitivity) of the microphone compared to a support column with a large number of support columns and a small aspect ratio.
  • the support column of the present invention may be selected from the same material as the first diaphragm 3 and/or the second diaphragm 2, for example, by depositing layer by layer, layer by layer etching in the first diaphragm 3,
  • the support column 6 is formed between the two diaphragms 2, and can be released by subsequent corrosion, which is common knowledge of those skilled in the art and will not be specifically described herein.
  • the first diaphragm 3 and the second diaphragm 2 serve as one of the plates of the capacitor, a conductive material is required.
  • the support column 6 is made of the same conductive material as the first diaphragm 3 and/or the second diaphragm 2, the first diaphragm 3 and the second diaphragm 2 are short-circuited.
  • the back pole unit needs to adopt a two-electrode structure.
  • the back pole unit includes a first back plate 11 for forming a capacitor structure with the first diaphragm 3, and a second back plate 12 for forming a capacitor structure with the second diaphragm 2;
  • An insulating layer 13 is disposed between the first back plate 11 and the second back plate 12.
  • the first back plate 11, the insulating layer 13, and the second back plate 12 may be stacked together to form a back pole unit, which improves the rigidity of the back pole unit.
  • the capacitor formed by the first diaphragm 3 and the first back plate 11 is denoted by C1
  • the capacitor composed of the second diaphragm 2 and the second back plate 12 is denoted by C2
  • the capacitor C1 and the capacitor C2 form a differential capacitor structure.
  • the support column 6 may be made of an insulating material to ensure insulation between the first diaphragm 3 and the second diaphragm 2, and a single sheet as shown in FIG. 2 may be used.
  • the structure of the back plate 4 is not specifically described herein.
  • the pressure relief hole 10 penetrating the first diaphragm 3 and the second diaphragm 2 is further included to reduce the acoustic resistance of the double diaphragm when vibrating with the external environment and the back cavity.
  • the sealing cavity a is formed between the first diaphragm 3 and the second diaphragm 2, in order to avoid the communication between the pressure relief hole 10 and the sealing cavity a, the hole wall of the pressure relief hole 10 is disposed.
  • the first diaphragm 3 and the second diaphragm 2 enclose the above-described sealed cavity a, with reference to Figs. 1 and 2 .
  • the pressure relief hole 10 may be provided with one located at a central position of the first diaphragm 3 and the second diaphragm 2. It is also possible that the pressure relief holes 10 are provided in plurality, distributed in the horizontal direction of the first diaphragm 3 and the second diaphragm 2. Each of the pressure relief holes 10 needs to occupy the volume of the sealed chamber a to separate the pressure relief holes 10 from the sealed chamber a, which will not be specifically described herein.

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Acoustics & Sound (AREA)
  • Signal Processing (AREA)
  • Multimedia (AREA)
  • Health & Medical Sciences (AREA)
  • Otolaryngology (AREA)
  • Electrostatic, Electromagnetic, Magneto- Strictive, And Variable-Resistance Transducers (AREA)
  • Pressure Sensors (AREA)

Abstract

本发明公开了一种MEMS麦克风，包括衬底、第一振膜、第二振膜，第一振膜、第二振膜之间形成了密封腔；背极单元位于密封腔内且与第一振膜、第二振膜构成电容器结构，背极单元上设置有多个贯通其两侧的通孔；其中，在密封腔内填充有粘滞系数小于空气的气体。本发明的MEMS麦克风，通过在密封腔中填充粘滞系数小于空气的气体，可以大大降低两个振膜相对于背极运动时的声阻，从而降低麦克风的噪声。同时，采用低粘滞系数的气体进行填充，使得可以让密封腔中的压力与外界环境的压力一致，避免了由于压差所带来的振膜偏转问题，保证了麦克风的性能。

Description

一种MEMS麦克风 技术领域
本发明涉及声电领域，更具体地，涉及一种麦克风，尤其涉及一种MEMS麦克风。
背景技术
MEMS(微型机电系统)麦克风是基于MEMS技术制造的麦克风，其中的振膜、背极是MEMS麦克风中的重要部件，振膜、背极构成了集成在硅晶片上的电容器，实现声电的转换。
传统的这种电容式麦克风，为了均衡振膜与背极之间的压力，通常会在背极上设置通孔。但是另一方面，该通孔形成了类似阻尼的毛细吸声结构，此结构提高了声音传输路径上的声阻。声阻的升高意味着空气热噪声致本底噪声的升高，最终使SNR降低。另外一方面，振膜和背板之间的间隙中也会产生空气阻尼，这是麦克风噪声声阻抗另一个重要的影响因素。以上两个空气阻尼通常是麦克风噪声的主要贡献者，这是实现高信噪比(SNR)麦克风的瓶颈。
现有市场上出现了一种双振膜的麦克风结构，该麦克风结构的两个振膜围成了空气密封的密封腔，两个振膜之间设置有一个具有穿孔的中心背极，该中心背极位于两个振膜的密封腔中，并与两个振膜构成了差分电容器结构。其中，还设置有用于支撑两个振膜中部位置的支撑柱。
这种结构的麦克风，尤其空气位于密封腔中，这与传统的麦克风相比具有更高的声阻抗，因此噪音也更高。另外，当密封腔的压力大于外界的压力时，则两个振膜会发生向其外侧鼓起的现象，反之两个振膜会发生向背极方向变形(瘪)的现象。这种由于共模间隙的变化，使得静态环境压力的变化会影响麦克风的性能(例如灵敏度)。尤其当温度升高时，周围环境与密封腔内的压力差就较大。
另外，支撑柱的设置会导致振膜的刚性较大，使得振膜不能很好地表征声压的状态，这就降低了振膜振动的灵敏度，从而在第一程度上影响到麦克风的性能。
发明内容
本发明的一个目的是提供一种MEMS麦克风的新技术方案。
根据本发明的第一方面，提供了一种MEMS麦克风，包括：
衬底；
第一振膜、第二振膜，所述第一振膜、第二振膜之间形成密封腔；
背极单元，所述背极单元位于密封腔内且与第一振膜、第二振膜构成电容器结构，所述背极单元上设置有多个贯通其两侧的通孔；
其中，在所述密封腔内填充有粘滞系数小于空气的气体。
可选地，所述气体为异丁烷、丙烷、丙烯、H2、乙烷、氨、乙炔、乙基氯、乙烯、CH3Cl、甲烷、SO2、H2S、氯气、CO2、N2O、N2中的至少一种。
可选地，所述密封腔与外界环境的压力一致。
可选地，所述密封腔的压力为一个标准大气压。
可选地，所述密封腔与外界环境的压差小于0.5atm。
可选地，所述密封腔与外界环境的压差小于0.1atm。
可选地，所述第一振膜、第二振膜分别与背极单元之间的间隙为0.5-3μm。
可选地，在所述第一振膜与第二振膜之间还设置有支撑柱，所述支撑柱穿过背极单元上的通孔且其两端分别与第一振膜、第二振膜连接在一起。
可选地，所述支撑柱的材料与第一振膜和/或第二振膜的材料相同。
可选地，所述支撑柱选用绝缘材料。
可选地，所述背极单元为一背极板，所述背极板与第一振膜、第二振膜分别构成了电容器结构。
可选地，所述背极单元包括用于与第一振膜构成电容器结构的第一背极板，以及用于与第二振膜构成电容器结构的第二背极板；在所述第一背极板与第二背极板之间设置有绝缘层。
可选地，所述密封腔是在常温和常压环境下进行密封的。
可选地，还包括贯通第一振膜、第二振膜的泄压孔，所述泄压孔的孔壁与第一振膜、第二振膜围成了所述的密封腔。
可选地，所述泄压孔设置有一个，其位于第一振膜、第二振膜的中部位置；或者是，所述泄压孔设置有多个。
本发明的MEMS麦克风，通过在密封腔中填充粘滞系数小于空气的气体，可以大大降低两个振膜相对于背极运动时的声阻，从而降低麦克风的噪声。同时，采用低粘滞系数的气体进行填充，使得可以让密封腔中的压力与外界环境的压力一致，避免了由于压差所带来的振膜偏转问题，保证了麦克风的性能。
通过以下参照附图对本发明的示例性实施例的详细描述，本发明的其它特征及其优点将会变得清楚。
附图说明
构成说明书的一部分的附图描述了本发明的实施例，并且连同说明书一起用于解释本发明的原理。
图1是本发明麦克风第一实施方式的结构示意图。
图2是本发明麦克风第二实施方式的结构示意图。
图3是本发明麦克风第三实施方式的结构示意图。
具体实施方式
现在将参照附图来详细描述本发明的各种示例性实施例。应注意到：除非另外具体说明，否则在这些实施例中阐述的部件和步骤的相对布置、数字表达式和数值不限制本发明的范围。
以下对至少一个示例性实施例的描述实际上仅仅是说明性的，决不作为对本发明及其应用或使用的任何限制。
对于相关领域普通技术人员已知的技术和设备可能不作详细讨论，但在适当情况下，所述技术和设备应当被视为说明书的一部分。
在这里示出和讨论的所有例子中，任何具体值应被解释为仅仅是示例 性的，而不是作为限制。因此，示例性实施例的其它例子可以具有不同的值。
应注意到：相似的标号和字母在下面的附图中表示类似项，因此，一旦某一项在一个附图中被定义，则在随后的附图中不需要对其进行进一步讨论。
参考图1，本发明提供的一种MEMS麦克风，其为双振膜麦克风结构。具体包括衬底1以及形成在衬底1上的第一振膜3、第二振膜2以及背极单元。本发明的振膜以及背极单元可以通过沉积、刻蚀的方式形成在衬底1上，所述衬底1可以采用单晶硅材料，振膜、背极单元可以采用单晶硅或者多晶硅材料，这种材料的选择以及沉积的工艺属于本领域技术人员的公知常识，在此不再具体说明。
参考图1，衬底1的中部区域设置有背腔。为了保证第二振膜2与衬底1之间的绝缘，在所述第二振膜2与衬底1之间连接的位置设置有绝缘层，该绝缘层可以采用本领域技术人员所熟知的二氧化硅材料。
在该实施例中，本发明的背极单元为一背极板4，在背极板4上设置有多个贯通其两侧的通孔5。所述背极板4可通过第一支撑部9支撑连接在第二振膜2的上方，使得背极板4与第二振膜2之间具有一定的间隙，二者构成了电容器结构。第一振膜3则可通过第二支撑部8支撑连接在背极板4的上方，使得第一振膜3与背极板4之间具有一定的间隙，二者构成了电容器结构。其中，第一支撑部9、第二支撑部8采用绝缘的材质，其在起到支撑作用的同时，还可以保证两个振膜与背极板之间的绝缘。这种结构方式以及材料的选择属于本领域技术人员的公知常识，在此不再具体说明。
背极板4设置在第一振膜3、第二振膜2之间，三者构成了类似三明治的结构。上述形成的两个电容器结构可以构成差分电容器结构，以提高麦克风的精度，这是双振膜麦克风的结构特点，在此不再具体说明。
优选的是，背极板4设置在第一振膜3、第二振膜2的中心位置。也就是说，背极板4到第一振膜3的距离等于背极板4到第二振膜2的距离。在本发明一个具体的实施方式中，背极板4到两个振膜的距离可以分别为 0.5-3μm，在此不再具体说明。
所述第一振膜3、第二振膜2之间形成了密封腔a，参考图1。在该实施例中，密封腔a的上下两侧为第一振膜3、第二振膜2，其左右两侧为第一支撑部9、第二支撑部8，它们共同围成了密封的密封腔a。
具体在制造的时候，例如可通过传统的MEMS工艺进行沉积、刻蚀，之后可通过设置在第一振膜3上的腐蚀孔将内部的牺牲层腐蚀掉，以释放第一振膜3、第二振膜2。最后对第一振膜3上的腐蚀孔进行封堵，从而形成密封腔a。
上述只是举例的方式列举了在第一振膜3上设置腐蚀孔进行腐蚀，当然对于本领域的技术人员而言，腐蚀孔还可以设置在第二振膜2上。当然，如果工艺允许，腐蚀孔还可以设置在第一支撑部9、第二支撑部8上。腐蚀掉内部的牺牲层后可以对腐蚀孔进行封堵，以形成密闭的密封腔a。例如可以在密封腔a的边缘位置形成封堵部，以将设置在密封腔a边缘的腐蚀孔封堵住。
由于背极板4上设置了多个通孔5，使得由背极板4隔开的密封腔a可以通过所述通孔5连通在一起。其中，在所述密封腔a内填充有粘滞系数小于空气的气体。
粘滞系数表征的是受力时气体分子间相互作用所产生的内摩擦力，且粘滞系数通常与温度、压力有关。因此粘滞系数小于空气的气体指的是在同等条件下的粘滞系数小于空气的气体。该同等条件例如可以是在麦克风的工作条件范围内，例如-20℃至100℃等，当然有些麦克风需要在极端的环境下工作，这根据麦克风应用领域而定。
例如在标准大气压条件下，0℃时空气的粘滞系数μ空气0℃约为1.73×10-5Pa·s，氢气在0℃时的粘滞系数μ氢气0℃约为0.84×10-5Pa·s，远小于空气在0℃时的粘滞系数。在20℃时，空气的粘滞系数μ空气20℃约为1.82×10-5Pa·s，而氢气的粘滞系数μ氢气20℃约为0.88×10-5Pa·s，远小于空气在20℃时的粘滞系数。
虽然气体的粘滞系数μ随着温度的升高会变大，但是从上面数据可以看出，氢气在20℃时的粘滞系数μ氢气20℃也远小于空气在0℃时的粘滞系数 μ空气0℃。
因此，可以在密封腔a内填充氢气，使得密封腔a气体的粘滞系数较小，这就相当于降低了两个振膜相对于背极运动时的声阻，从而降低了麦克风的噪声。
现有技术中，粘滞系数低于空气的气体很多，可以选择那些在麦克风工作条件下小于空气粘滞系数的气体，这些气体例如可以选用异丁烷、丙烷、丙烯、H2、乙烷、氨、乙炔、乙基氯、乙烯、CH3Cl、甲烷、SO2、H2S、氯气、CO2、N2O、N2中的至少一种。
气体的粘滞系数μ与麦克风的声阻Ra有着直接的联系。其中麦克风的声阻主要包括振膜与背极板间隙间的声阻Ra.gap以及背极板上通孔位置的声阻Ra.hole。其中：
Ra.gap＝12μ/(π ng3Smem)·(A/2-A2/8-lnA/4-3/8)；其中，n为通孔密度，g为间隙的尺寸，Smem为振膜面积，A为通孔与背极板的面积比。
Ra.hole＝8μT/(π r4N)；其中，T为通孔的厚度，r为通孔半径，N为通孔的总数。
则，麦克风的声阻Ra＝Ra.gap+Ra.hole。
从上述公式可以看出，气体的粘滞系数μ与麦克风的声阻Ra呈正比，也就是说，当密封腔a内气体的粘滞系数μ越小时，则麦克风的声阻Ra也就越小。
另外，麦克风的噪声功率谱密度PSD(f)是与4KTRa呈正比的，其中f为频率，K为玻尔兹曼常数，T为温度(单位为开尔文)。而信噪比SNR计算公式中的噪声N(幅度)是PSD在期望频率带宽内(例如20Hz-20kHz)的加权积分的平方根。因此噪声N(幅度)与气体粘滞系数μ的平方根呈正比的关系。
按照上述的计算公式，如果密封腔a内气体的粘滞系数μ降低到一半，那么声阻Ra也降低到一半，因此噪声N将被改变10×log(1/2)＝-3dB，这对于高性能的MEMS麦克风来说是难能可贵的。
采用低粘滞系数气体来填充密封腔的另一个优点在于，可以使密封腔a内的压力与外界环境压力保持一致。例如在填充氢气并密封的时候，可 以在氢气氛围内，并在常温(室温)、常压(或者接近一个大气压)的环境中进行密封以补偿外界的环境压力。也就是说使密封后的密封腔a与外界环境的压力差为零，从而在静态时可以使第一振膜3、第二振膜2保持平整，不会发生鼓起或者瘪下去的问题。这就避免了两个振膜间支撑柱的使用，从而可以提高麦克风的灵敏度，保证了麦克风的声学性能。
虽然外界环境的压力是变化的，封装之后的密封腔a内的压力是固定不变的，但是让密封腔a内的压力尽量接近外界的环境压力，例如可以选择密封腔a的压力为一个标准大气压。从而可以尽量减小密封腔a与外界环境的压差，以降低振膜由于压差而导致的偏转程度，从而可以保证麦克风的性能(灵敏度)。
另外，由于制造工艺的原因，会使得密封腔a内的压力与外界环境的压力有误差，这种误差优选要小于0.5atm(标准大气压)，进一步优选的是要小于0.1atm(标准大气压)。
当然，为了解决由于密封腔a与外界环境压差而导致的振膜偏转问题，可以在两个振膜之间设置支撑柱6，参考图2。所述支撑柱6穿过背极板4上的通孔5，且其两端分别与第一振膜3、第二振膜2连接在一起。支撑柱6可以设置有多个，均匀地分布在两个振膜之间，从而使得在密封腔a与外界环境存在压差时，连接在两个振膜之间的支撑柱6可以抵挡振膜的偏转。
由于密封腔a与外界环境的压差有可能是制造工艺引起的，但是这种工艺误差所造成的压差不会很大。或者是麦克风在使用时，其外界环境的压力也会发生变化，但是这种变化也不会很大。因此可以选用少量的支撑柱6即可，或者是选用高宽比很大的支撑柱6，亦即细长的支撑柱6进行支撑即可。这与采用大量支撑柱、高宽比很小的支撑柱而言，可以显著提高麦克风的声学性能(灵敏度)。
本发明的支撑柱可以选用与第一振膜3和/或第二振膜2相同的材料，例如在沉积的时候可以通过逐层沉积、逐层刻蚀的方式在第一振膜3、第二振膜2之间形成支撑柱6，并可通过后续的腐蚀来进行释放，这属于本领域技术人员的公知常识，在此不再具体说明。
由于第一振膜3、第二振膜2作为电容器的其中一个极板，需要采用导电的材质。当支撑柱6采用与第一振膜3和/或第二振膜2相同的导电材质时，会将第一振膜3、第二振膜2短路。此时，背极单元需要采用双电极结构。
参考图3，背极单元包括用于与第一振膜3构成电容器结构的第一背极板11，以及用于与第二振膜2构成电容器结构的第二背极板12；在所述第一背极板11与第二背极板12之间设置有绝缘层13。第一背极板11、绝缘层13、第二背极板12可以层叠在一起共同构成背极单元，提高了背极单元的刚性。
第一振膜3与第一背极板11构成的电容器记为C1，第二振膜2与第二背极板12构成的电容器记为C2，电容器C1、电容器C2形成了差分电容器结构。
在本发明另一个具体的实施方式中，所述支撑柱6可以选用绝缘材料，以保证第一振膜3、第二振膜2之间的绝缘，此时可以采用如图2示出的单背极板4结构，在此不再具体说明。
另外优选的是，还包括贯通第一振膜3、第二振膜2的泄压孔10，以减少双振膜振动时与外界环境、背腔的声阻。其中需要注意的是，由于第一振膜3与第二振膜2之间形成了密封腔a，为了避免泄压孔10与密封腔a的连通，设置所述泄压孔10的孔壁与第一振膜3、第二振膜2围成了上述的密封腔a，参考图1、图2。
在一个具体的实施方式中，所述泄压孔10可以设置有一个，其位于第一振膜3、第二振膜2的中心位置。还可以是，所述泄压孔10可设置有多个，分布在第一振膜3、第二振膜2的水平方向上。每个泄压孔10都需要占据密封腔a的容积，以将泄压孔10从密封腔a中分隔开来，在此不再具体介绍。
虽然已经通过例子对本发明的一些特定实施例进行了详细说明，但是本领域的技术人员应该理解，以上例子仅是为了进行说明，而不是为了限制本发明的范围。本领域的技术人员应该理解，可在不脱离本发明的范围和精神的情况下，对以上实施例进行修改。本发明的范围由所附权利要求 来限定。

Claims (15)

  1. 一种MEMS麦克风，其特征在于，包括：
    衬底；
    第一振膜、第二振膜，所述第一振膜、第二振膜之间形成密封腔；
    背极单元，所述背极单元位于密封腔内且与第一振膜、第二振膜构成电容器结构，所述背极单元上设置有多个贯通其两侧的通孔；
    其中，在所述密封腔内填充有粘滞系数小于空气的气体。
  2. 根据权利要求1所述的MEMS麦克风，其特征在于：所述气体为异丁烷、丙烷、丙烯、H2、乙烷、氨、乙炔、乙基氯、乙烯、CH3Cl、甲烷、SO2、H2S、氯气、CO2、N2O、N2中的至少一种。
  3. 根据权利要求1或2所述的MEMS麦克风，其特征在于：所述密封腔与外界环境的压力一致。
  4. 根据权利要求1至3任一项所述的MEMS麦克风，其特征在于：所述密封腔的压力为一个标准大气压。
  5. 根据权利要求1或2或4所述的MEMS麦克风，其特征在于：所述密封腔与外界环境的压差小于0.5atm。
  6. 根据权利要求5所述的MEMS麦克风，其特征在于：所述密封腔与外界环境的压差小于0.1atm。
  7. 根据权利要求1至6任一项所述的MEMS麦克风，其特征在于：所述第一振膜、第二振膜分别与背极单元之间的间隙为0.5-3μm。
  8. 根据权利要求1至7任一项所述的MEMS麦克风，其特征在于：在所述第一振膜与第二振膜之间还设置有支撑柱，所述支撑柱穿过背极单元上的通孔且其两端分别与第一振膜、第二振膜连接在一起。
  9. 根据权利要求8所述的MEMS麦克风，其特征在于：所述支撑柱的材料与第一振膜和/或第二振膜的材料相同。
  10. 根据权利要求8所述的MEMS麦克风，其特征在于：所述支撑柱选用绝缘材料。
  11. 根据权利要求1至10任一项所述的MEMS麦克风，其特征在于： 所述背极单元为一背极板，所述背极板与第一振膜、第二振膜分别构成了电容器结构。
  12. 根据权利要求1至10任一项所述的MEMS麦克风，其特征在于：所述背极单元包括用于与第一振膜构成电容器结构的第一背极板，以及用于与第二振膜构成电容器结构的第二背极板；在所述第一背极板与第二背极板之间设置有绝缘层。
  13. 根据权利要求1至12任一项所述的MEMS麦克风，其特征在于：所述密封腔是在常温和常压环境下进行密封的。
  14. 根据权利要求1至13任一项所述的MEMS麦克风，其特征在于：还包括贯通第一振膜、第二振膜的泄压孔，所述泄压孔的孔壁与第一振膜、第二振膜围成了所述的密封腔。
  15. 根据权利要求14所述的MEMS麦克风，其特征在于：所述泄压孔设置有一个，其位于第一振膜、第二振膜的中部位置；或者是，所述泄压孔设置有多个。
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