WO2020103671A1 - 植物补光用led光源及使用该光源的灯具 - Google Patents

植物补光用led光源及使用该光源的灯具

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Publication number
WO2020103671A1
WO2020103671A1 PCT/CN2019/114978 CN2019114978W WO2020103671A1 WO 2020103671 A1 WO2020103671 A1 WO 2020103671A1 CN 2019114978 W CN2019114978 W CN 2019114978W WO 2020103671 A1 WO2020103671 A1 WO 2020103671A1
Authority
WO
WIPO (PCT)
Prior art keywords
powder layer
led
adhesive
led chip
adhesive powder
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/CN2019/114978
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English (en)
French (fr)
Inventor
李许可
潘翔
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
HANGZHOU HANHUI OPTOELECTRONIC Tech CO Ltd
Original Assignee
HANGZHOU HANHUI OPTOELECTRONIC Tech CO Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from CN201811399094.9A external-priority patent/CN109644718B/zh
Priority claimed from CN201811399092.XA external-priority patent/CN109538979B/zh
Priority claimed from CN201811400237.3A external-priority patent/CN109538952B/zh
Priority claimed from CN201811400238.8A external-priority patent/CN109854979B/zh
Application filed by HANGZHOU HANHUI OPTOELECTRONIC Tech CO Ltd filed Critical HANGZHOU HANHUI OPTOELECTRONIC Tech CO Ltd
Priority to EP19886796.2A priority Critical patent/EP3767167B1/en
Priority to JP2020560244A priority patent/JP2021520612A/ja
Priority to US17/043,669 priority patent/US11419278B2/en
Publication of WO2020103671A1 publication Critical patent/WO2020103671A1/zh
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

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    • A—HUMAN NECESSITIES
    • A01—AGRICULTURE; FORESTRY; ANIMAL HUSBANDRY; HUNTING; TRAPPING; FISHING
    • A01G—HORTICULTURE; CULTIVATION OF VEGETABLES, FLOWERS, RICE, FRUIT, VINES, HOPS OR SEAWEED; FORESTRY; WATERING
    • A01G7/00—Botany in general
    • A01G7/04—Electric or magnetic or acoustic treatment of plants for promoting growth
    • A01G7/045—Electric or magnetic or acoustic treatment of plants for promoting growth with electric lighting
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F21—LIGHTING
    • F21V—FUNCTIONAL FEATURES OR DETAILS OF LIGHTING DEVICES OR SYSTEMS THEREOF; STRUCTURAL COMBINATIONS OF LIGHTING DEVICES WITH OTHER ARTICLES, NOT OTHERWISE PROVIDED FOR
    • F21V9/00—Elements for modifying spectral properties, polarisation or intensity of the light emitted, e.g. filters
    • F21V9/30—Elements containing photoluminescent material distinct from or spaced from the light source
    • F21V9/32—Elements containing photoluminescent material distinct from or spaced from the light source characterised by the arrangement of the photoluminescent material
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F21—LIGHTING
    • F21V—FUNCTIONAL FEATURES OR DETAILS OF LIGHTING DEVICES OR SYSTEMS THEREOF; STRUCTURAL COMBINATIONS OF LIGHTING DEVICES WITH OTHER ARTICLES, NOT OTHERWISE PROVIDED FOR
    • F21V9/00—Elements for modifying spectral properties, polarisation or intensity of the light emitted, e.g. filters
    • F21V9/40—Elements for modifying spectral properties, polarisation or intensity of the light emitted, e.g. filters with provision for controlling spectral properties, e.g. colour, or intensity
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F21—LIGHTING
    • F21V—FUNCTIONAL FEATURES OR DETAILS OF LIGHTING DEVICES OR SYSTEMS THEREOF; STRUCTURAL COMBINATIONS OF LIGHTING DEVICES WITH OTHER ARTICLES, NOT OTHERWISE PROVIDED FOR
    • F21V9/00—Elements for modifying spectral properties, polarisation or intensity of the light emitted, e.g. filters
    • F21V9/40—Elements for modifying spectral properties, polarisation or intensity of the light emitted, e.g. filters with provision for controlling spectral properties, e.g. colour, or intensity
    • F21V9/45—Elements for modifying spectral properties, polarisation or intensity of the light emitted, e.g. filters with provision for controlling spectral properties, e.g. colour, or intensity by adjustment of photoluminescent elements
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/851—Wavelength conversion means
    • H10H20/8511—Wavelength conversion means characterised by their material, e.g. binder
    • H10H20/8512—Wavelength conversion materials
    • H10H20/8513—Wavelength conversion materials having two or more wavelength conversion materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/851—Wavelength conversion means
    • H10H20/8511—Wavelength conversion means characterised by their material, e.g. binder
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/857—Interconnections, e.g. lead-frames, bond wires or solder balls
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P60/00—Technologies relating to agriculture, livestock or agroalimentary industries
    • Y02P60/14—Measures for saving energy, e.g. in green houses

Definitions

  • the invention relates to an LED light source for plant supplementary light and a lamp using the light source, belonging to the technical field of facility agriculture lighting.
  • light radiation can regulate the photosynthesis, growth and development, morphogenesis and plant metabolism of plants.
  • the different wavelengths of light irradiated on the plant have different effects on the physiology of the plant, so the weights of light in different wavelengths participating in photosynthesis are also different, and vary with the plant variety and the stage of growth.
  • Chlorophyll is responsible for the absorption, transmission and transformation of light energy in plants.
  • Carotenoids perform two functions: light energy capture and light destruction defense. They play a very important role in photosynthesis.
  • the maximum absorption peaks of chlorophyll a are 410nm, 430nm and 660nm; the maximum absorption peaks of chlorophyll b are 430nm, 455nm and 640nm.
  • Carotenoids are important auxiliary pigments, and the light energy they absorb is exactly complementary to chlorophyll, so they can help chlorophyll receive light energy.
  • the carotenoid absorption band is in the blue-violet region from 400nm to 500nm.
  • the maximum absorption spectrum of phycocyanin is in the orange-red part, and the maximum absorption spectrum of phycoerythrin is in the green part.
  • the influence of light quality in light conditions, especially the ratio (R / FR) of the ratio of red light (600 nm to 700 nm, R) to far red light (700 nm to 800 nm, FR) in the spectrum (R / FR) has attracted increasing attention.
  • the ratio of red light to far red light in the spectrum (R / FR) has an important influence on the regulation of gibberellin (CA) content, plant morphogenesis and plant height adjustment in plants.
  • CA gibberellin
  • Plant FR gibberellin
  • visible light is needed for photosynthesis. But as we all know, visible light is a kind of composite light. Different plants have different requirements for different colors of light in the growth process.
  • the number of red LEDs or far-red LEDs in the light source needs to be increased to adjust the R / FR ratio, so as to achieve the purpose of controlling plant morphology; by increasing the number of green LEDs Make up for the shortcomings in the spectrum.
  • a combination of multiple LED light sources of different colors is used to achieve a light environment with different ratios and different light qualities, which is extremely inconvenient for users. If LED light sources of different colors are combined in the process of combining LED light sources If the ratio is wrong, it is difficult to achieve the purpose of increasing plant yield and quality.
  • the second is to increase the cost of LED light sources, such as red light and ultraviolet light, by adding ultraviolet light-emitting diodes, green light-emitting diodes or infrared light-emitting diodes to make up for the shortcomings in the effective spectrum of plant biological radiation, enhancing photosynthesis or adjusting the light quality ratio
  • the price of light LED chips is 5-8 times the price of blue LED chips;
  • the fourth is the proportion of ultraviolet light (280nm ⁇ 400nm) and infrared light (700nm ⁇ 800nm) in the formation of light morphology, which is relatively low in the spectrum of plant biological effective radiation (280nm ⁇ 800nm), and the LED light emission angle is small, so It is difficult to meet the requirements in the design of spectral uniform illumination. Under the premise that the number of infrared or ultraviolet LED light sources is small, it is difficult to uniformly configure the infrared or ultraviolet LED light sources, or even if the diffusion angle of the infrared or ultraviolet LED light sources is adjusted to the best, ultraviolet light, infrared light and red light The color mixing with blue light is also insufficient, so the spectral distribution is apt to occur.
  • the purpose of the present invention is to provide an LED light source for plant supplementary light and a lamp using the light source, which emits a fixed proportion of different spectral composition of light formula in a single LED lighting device, which is convenient for manufacturing, cost control and user use .
  • an LED light source for plant supplementary light which includes a substrate, an LED wafer, a first adhesive powder layer and a second adhesive powder layer;
  • the LED chip is mounted on one surface of the substrate; wherein, the LED chip is a blue LED chip;
  • the first adhesive powder layer and the second adhesive powder layer are covered above the LED chip;
  • the first adhesive powder layer fixes the LED chip on the substrate, and it is a mixture of adhesive and red phosphor
  • the second adhesive powder layer covers the first adhesive powder layer and completely wraps the first adhesive powder layer; the second adhesive powder layer is a mixture of an adhesive body and a yellow phosphor; or the second The adhesive powder layer is a mixture of adhesive and infrared phosphor.
  • An LED light source for plant supplementary light which is characterized by comprising a substrate, an LED chip and a first glue powder layer;
  • the LED chip is mounted on one surface of the substrate; wherein, the LED chip is a blue LED chip;
  • the first glue powder layer is covered above the LED chip
  • the first adhesive powder layer fixes the LED chip on the substrate, and it is a mixture of adhesive, red phosphor, and yellow phosphor; or the first adhesive powder layer is adhesive, red phosphor And infrared phosphor mixture.
  • an LED device for plant supplementary light which includes a substrate, an LED wafer, a first adhesive powder layer and a second adhesive powder layer;
  • the LED wafer is mounted on one surface of the substrate; wherein the LED wafer includes one or a combination of blue LED wafer and ultraviolet LED wafer;
  • the first adhesive powder layer and the second adhesive powder layer are covered above the LED chip;
  • the first adhesive powder layer fixes the LED chip on the substrate, and it is a mixture of adhesive and red phosphor
  • the second adhesive powder layer covers the first adhesive powder layer and completely wraps the first adhesive powder layer; the second adhesive powder layer is a mixture of an adhesive body and an infrared phosphor; or the second The adhesive powder layer is a mixture of adhesive and yellow phosphor.
  • an LED device for plant supplementary light which includes a substrate, an LED wafer and a first glue powder layer;
  • the LED wafer is mounted on one surface of the substrate; wherein the LED wafer includes one or a combination of blue LED wafer and ultraviolet LED wafer;
  • the first glue powder layer is covered above the LED chip
  • the first adhesive powder layer fixes the LED chip on the substrate, and it is a mixture of adhesive, red phosphor, and yellow phosphor; or the first adhesive powder layer is adhesive, red phosphor And infrared phosphor mixture.
  • an LED light source for flip-type plant supplementary light which includes a substrate, an LED chip, a first adhesive powder layer and a second adhesive powder layer;
  • the LED chip is mounted on one surface of the substrate; wherein, the LED chip is a blue LED chip;
  • a first adhesive powder layer is provided between the LED wafer and the substrate, and a second adhesive powder layer is covered above the LED wafer;
  • the first adhesive powder layer fixes the LED chip on the substrate, and it is a mixture of adhesive and red phosphor
  • the second adhesive powder layer covers the LED wafer and completely wraps the LED wafer; the second adhesive powder layer is a mixture of an adhesive body and a yellow phosphor; or the second adhesive powder layer is an adhesive And infrared phosphor mixture.
  • an LED light source for flip-type plant supplementary light which includes a substrate, an LED chip, a first adhesive powder layer and a second adhesive powder layer;
  • the LED chip is mounted on one surface of the substrate; wherein, the LED chip is a blue LED chip;
  • a first adhesive powder layer is provided between the LED wafer and the substrate, and a second adhesive powder layer is covered above the LED wafer;
  • the first adhesive powder layer fixes the LED chip on the substrate, and the first adhesive powder layer is a mixture of adhesive and yellow phosphor; or the first adhesive powder layer is adhesive and infrared phosphor mixture;
  • the second adhesive powder layer covers the LED wafer and completely wraps the LED wafer; the second adhesive powder layer is a mixture of adhesive and red phosphor.
  • a lamp including the above-mentioned LED light source for plant supplementary light is adopted.
  • the present invention has the following beneficial effects:
  • the power generation brick provided by the present invention can be laid on pedestrian streets, squares, roads and floor roofs of a city or used as a wall of a building, and converts collected solar thermal energy into electrical energy for surrounding electricity
  • the use of facilities reduces external messy wiring and reduces costs.
  • FIG. 1 is a schematic structural view of an LED light source for plant supplementary light according to Embodiments 1-5 of the present invention
  • FIG. 2 is a schematic structural view of an LED light source for plant supplementary light according to Examples 6-10 of the present invention
  • FIG. 3 is a schematic structural view of an LED light source for plant supplementary light according to Examples 11-13 of the present invention.
  • FIG. 4 is a schematic structural diagram of an LED light source for plant supplementary light according to Embodiments 14-16 of the present invention.
  • This embodiment provides an LED light source for plant supplementary light, which includes a substrate, an LED chip, a first adhesive powder layer and a second adhesive powder layer.
  • the LED chip is any one selected from the group consisting of: a semiconductor light emitting diode; an organic light emitting diode OLED; a quantum dot light emitting diode QLED and a micro light emitting diode Micro-LED.
  • the LED chip is provided on the substrate, and preferably, the substrate is a PCB board, and the LED chip is installed on one surface of the substrate, and a heat dissipation device, such as a heat dissipation substrate, is installed on the other surface of the substrate.
  • a heat dissipation device such as a heat dissipation substrate
  • the LED chip may be a blue LED chip, that is, the LED chip can generate blue light of 400 nm to 480 nm.
  • a first adhesive powder layer and a second adhesive powder layer are covered above the LED wafer; in this embodiment, the first adhesive powder layer fixes the LED wafer on the substrate, and it is an adhesive and A mixture of red phosphors, wherein the weight ratio of the adhesive to the red phosphors is 100: 10-150, and 100: 50 or 100: 100 can be selected as a preferred solution.
  • the red phosphor is excited by the blue light emitted by the LED chip to emit red light with a luminescence peak falling within the wavelength range of 605 nm to 680 nm.
  • the second adhesive powder layer covers the first adhesive powder layer and completely wraps the first adhesive powder layer; in this embodiment, the second adhesive powder layer is made of an adhesive body and yellow phosphor The mixture, wherein the weight ratio of the adhesive body and the yellow phosphor is 100: 10-30, and preferably, the weight ratio of the adhesive body and the yellow phosphor is 100: 20.
  • green light and infrared light with a wavelength of 500 nm to 560 nm can be generated.
  • the green light can adjust vision and photosynthesis, and infrared is to adjust the light form of plants.
  • the weight ratio of the adhesive of the first adhesive powder layer to the red phosphor and the thickness of the first adhesive powder layer by controlling the weight ratio of the adhesive of the first adhesive powder layer to the red phosphor and the thickness of the first adhesive powder layer; at the same time controlling the adhesive of the second adhesive powder layer and the yellow phosphor
  • the weight ratio and the thickness of the second powder layer make the ratio of photon flux density of red light (600nm ⁇ 680nm): blue light (420nm ⁇ 480nm): infrared light: green light: ultraviolet light (PPFD) to 70 ⁇ 90: 10 ⁇ 30: 1 ⁇ 30: 5-20: 0.01 ⁇ 1.
  • the thickness of the first rubber powder layer may be set to 0.1mm-0.5mm; the thickness of the second rubber powder layer may be set to 0.1mm-0.9mm, so that the ratio of photon flux density is in the above range Inside.
  • the blue LED chip has a luminescence peak in the range of 400 nm to 480 nm, or a combination of multi-wavelength blue LED chip with luminescence peak in the range of 400 nm to 480 nm.
  • the yellow phosphor is one or a combination of yellow phosphor such as silicate yellow powder, aluminate yellow powder, nitride and nitrogen oxide phosphor.
  • the red phosphor uses one of YAGG, YAGG: Ce 3+ , YAG: Eu 2+ , nitride red phosphor, Mn 4+ doped K 2 SiF 6 and K 2 SnF 6 deep red phosphor or Their combination.
  • the adhesive is one or more of silica gel, epoxy resin, polymethyl methacrylate (PMMA), polycarbonate (PC), or photosensitive colloid. According to different needs, the corresponding glue is used in the crystal bonding process and the potting process.
  • red phosphor and yellow phosphor excited by blue LED chips can not only form a full spectrum, but also highlight the photosynthetic characteristics of plant photosynthesis, which changes the need to use red LED chips in the prior art.
  • Blue LED chip, infrared LED chip, ultraviolet LED chip, green LED chip and other multi-chip combination can only achieve the optical formula, LED chip input cost and circuit and heat sink cost are greatly reduced (red LED chip, infrared LED chip, green LED The price of the chip is much higher than that of the blue LED chip, and the luminous efficiency is very low);
  • the light source formula of the LED light source for plant supplementary light of the present invention is more uniform, and the light emitting angle of the light source can be controlled; The amount is small, and it is very difficult to achieve a uniform light quality distribution.
  • the LED light source for plant supplementary light of the invention has longer life and lower heat dissipation cost.
  • the blue LED chip excites the combination of red phosphor and yellow phosphor, eliminating the need to use red LED chips, infrared LED chips, and green LED chips, greatly reducing the power of plant growth light sources, and simplifying the circuit design (blue LED, red LED chip, infrared LED)
  • the circuit complexity is caused by the different working voltage drop of the chip and the green LED chip.
  • the blue LED chip can be used to excite the red phosphor and the yellow phosphor to achieve the desired spectrum, the circuit design is simplified), the amount of capacitors is reduced, the circuit cost is low, and the life Greatly extended.
  • the light source of the blue LED chip of the invention excites the red phosphor and the yellow phosphor is used as the light formula to irradiate lettuce.
  • the soluble sugar content of lettuce treated by the light source of the invention is higher than that of the red
  • the fill light of the light LED light source and the blue LED light source is 30% -50% higher, and the cost of the light source is reduced by more than half.
  • This embodiment provides an LED light source for plant supplementary light, including a substrate, an LED wafer, and a first glue powder layer.
  • the LED chip is any one selected from the group consisting of: a semiconductor light emitting diode; an organic light emitting diode OLED; a quantum dot light emitting diode QLED and a micro light emitting diode Micro-LED.
  • the LED chip is provided on the substrate, and preferably, the substrate is a PCB board, and the LED chip is installed on one surface of the substrate, and a heat dissipation device, such as a heat dissipation substrate, is installed on the other surface of the substrate.
  • a heat dissipation device such as a heat dissipation substrate
  • the LED chip may be a blue LED chip, that is, the LED chip can generate blue light from 450 nm to 480 nm.
  • a first glue powder layer is covered above the LED wafer; in this embodiment, the first glue powder layer fixes the LED wafer on the substrate, and it is an adhesive body, red phosphor, and yellow fluorescence
  • the blue light excites the red phosphor to produce red light
  • the yellow phosphor the blue light excites the yellow phosphor to produce green light and infrared light.
  • red light 600nm ⁇ 680nm
  • blue light 420nm ⁇ 480nm
  • Infrared light green light: ultraviolet light
  • the ratio of photon flux density (PPFD) is 70 ⁇ 90: 10 ⁇ 30: 1 ⁇ 30: 5-20: 0.01 ⁇ 1.
  • the thickness of the first rubber powder layer may be set to 0.2 mm to 1.4 mm, so that the ratio of the photon flux density is within the above range.
  • the blue LED chip has a luminescence peak in the range of 400 nm to 480 nm, or a combination of multi-wavelength blue LED chip with luminescence peak in the range of 400 nm to 480 nm.
  • the yellow phosphor is one or a combination of yellow phosphor such as silicate yellow powder, aluminate yellow powder, nitride and nitrogen oxide phosphor.
  • the red phosphor uses one of YAGG, YAGG: Ce 3+ , YAG: Eu 2+ , nitride red phosphor, Mn 4+ doped K 2 SiF 6 and K 2 SnF 6 deep red phosphor or Their combination.
  • the adhesive is one or more of silica gel, epoxy resin, polymethyl methacrylate (PMMA), polycarbonate (PC), or photosensitive colloid. According to different needs, the corresponding glue is used in the crystal bonding process and the potting process.
  • This embodiment provides an LED light source for plant supplementary light, which is different from Embodiment 1 in that an infrared phosphor is used to replace the yellow phosphor, and at this time:
  • the weight ratio of the adhesive body and the infrared phosphor is 100: 10-30, and preferably, the weight ratio of the adhesive body and the infrared phosphor is 100: 25.
  • infrared light can be generated, wherein the wavelength of the infrared light is 700nm-760nm, optimally 730nm, thereby adjusting the plant light morphology through infrared.
  • the weight ratio of the adhesive of the first adhesive powder layer and the red phosphor, and the thickness of the first adhesive powder layer make the ratio of photon flux density of red light (600nm ⁇ 680nm): blue light (420nm ⁇ 480nm): infrared light: green light: ultraviolet light (PPFD) to 70 ⁇ 90: 10 ⁇ 30: 1 ⁇ 30: 5-20: 0.01 ⁇ 1.
  • the thickness of the first rubber powder layer may be set to 0.1mm-0.5mm; the thickness of the second rubber powder layer may be set to 0.1mm-0.9mm, so that the ratio of photon flux density is in the above range Inside.
  • the blue LED chip has a luminescence peak in the range of 400 nm to 480 nm, or a combination of multi-wavelength blue LED chip with luminescence peak in the range of 400 nm to 480 nm.
  • the red phosphor uses one of YAGG, YAGG: Ce 3+ , YAG: Eu 2+ , nitride red phosphor, Mn 4+ doped K 2 SiF 6 and K 2 SnF 6 deep red phosphor or Their combination.
  • the infrared phosphor is one of Cr 3+ , Ce 3+ , and Yb 3+ multi-doped YAG near-infrared phosphor, or a combination thereof, such as Y 3 Al 5 O 12 : Cr, Ce, Yb.
  • the adhesive is one or more of silica gel, epoxy resin, polymethyl methacrylate (PMMA), polycarbonate (PC), or photosensitive colloid. According to different needs, the corresponding glue is used in the crystal bonding process and the potting process.
  • This embodiment provides an LED light source for plant supplementary light, which is different from Embodiment 2 in that an infrared phosphor is used to replace the yellow phosphor, and at this time:
  • the weight ratio of the adhesive, the red phosphor and the infrared phosphor is 100: 10-100: 10-40, and preferably can be set to 100: 50: 20, that is, by adding red phosphor, blue light stimulates red fluorescence
  • the powder generates red light, and by the addition of infrared phosphor, the blue light excites the infrared phosphor to generate infrared light, wherein the wavelength of the infrared light is 700nm-760nm, optimally 730nm.
  • red light 600nm ⁇ 680nm
  • blue light 420nm ⁇ 480nm
  • Infrared light green light: ultraviolet light
  • the ratio of photon flux density (PPFD) is 70 ⁇ 90: 10 ⁇ 30: 1 ⁇ 30: 5-20: 0.01 ⁇ 1.
  • the thickness of the first rubber powder layer may be set to 0.2 mm-1.4 mm, so that the ratio of the photon flux density is within the above range.
  • the blue LED chip has a luminescence peak in the range of 400 nm to 480 nm, or a combination of multi-wavelength blue LED chip with luminescence peak in the range of 400 nm to 480 nm.
  • the red phosphor uses one of YAGG, YAGG: Ce 3+ , YAG: Eu 2+ , nitride red phosphor, Mn 4+ doped K 2 SiF 6 and K 2 SnF 6 deep red phosphor or Their combination;
  • the infrared phosphor is one of Cr 3+ , Ce 3+ , Yb 3+ multi-doped YAG near-infrared phosphor or a combination thereof, such as Y 3 Al 5 O 12 : Cr, Ce , Yb.
  • the adhesive is one or more of silica gel, epoxy resin, polymethyl methacrylate (PMMA), polycarbonate (PC), or photosensitive colloid. According to different needs, the corresponding glue is used in the crystal bonding process and the potting process.
  • This embodiment provides a lamp including the LED light source for plant supplementary light in Embodiments 1 to 4.
  • the lamp further includes an electrical connector and an LED driver; the LED light source for plant supplementary light can be connected in series, or in parallel, or in series and parallel.
  • the PCB board is provided with an insulating layer and a conductive line, and the conductive line is connected to the positive electrode and the negative electrode of the LED chip through a lead, thereby achieving circuit connection of the LED chip.
  • the conductive circuit is connected to the output of the LED driver; the LED driver is used to drive the LED light source for plant supplementary light.
  • the PCB board is a strip-shaped PCB board, a rectangular PCB board or a disc-shaped PCB board, and may adopt aluminum nitride, copper substrate, copper alloy substrate, aluminum oxide, epoxy resin molding compound, silicon carbide, diamond, silicon, One of graphite aluminum substrate, aluminum-iron alloy substrate, high thermal conductivity plastic substrate or aluminum clad substrate.
  • This embodiment provides an LED device for plant supplementary light, which includes a substrate, an LED wafer, a first adhesive powder layer, and a second adhesive powder layer.
  • the LED chip is any one selected from the group consisting of: a semiconductor light emitting diode; an organic light emitting diode OLED; a quantum dot light emitting diode QLED and a micro light emitting diode Micro-LED.
  • the LED chip is provided on the substrate, and preferably, the substrate is a PCB board, and the LED chip is installed on one surface of the substrate, and a heat dissipation device, such as a heat dissipation substrate, is installed on the other surface of the substrate.
  • a heat dissipation device such as a heat dissipation substrate
  • the LED chip includes one or a combination of a blue LED chip and an ultraviolet LED chip, that is, the LED chip can generate blue light with a wavelength of 400 nm to 480 nm and near ultraviolet light with a wavelength of 320 nm to 400 nm.
  • a first adhesive powder layer and a second adhesive powder layer are covered above the LED wafer; in this embodiment, the first adhesive powder layer fixes the LED wafer on the substrate, and it is an adhesive and A mixture of red phosphors, wherein the weight ratio of the adhesive to the red phosphors is 100: 10-150, and 100: 50 or 100: 100 can be selected as a preferred solution.
  • the red phosphor is excited by the blue light and ultraviolet light emitted by the LED chip to emit red light with a luminescence peak falling within the wavelength range of 605 nm-680 nm.
  • the second adhesive powder layer covers the first adhesive powder layer and completely wraps the first adhesive powder layer; in this embodiment, the second adhesive powder layer is made of adhesive and infrared phosphor
  • the mixture wherein the weight ratio of the adhesive body and the infrared phosphor is 100: 10-40, and preferably, the weight ratio of the adhesive body and the infrared phosphor is 100: 25.
  • infrared light can be generated through the setting of infrared phosphors and the excitation of infrared phosphors with blue light and ultraviolet light, wherein the infrared light has a wavelength of 700nm-760nm, optimally 730nm, to adjust the plant light morphology.
  • the weight ratio and the thickness of the second rubber powder layer make the ratio of the photon flux density (PPFD) of red light (600 nm to 700 nm): blue light (400 nm to 470 nm): infrared light: green light: ultraviolet light (PPFD) to 70 to 90: 10 ⁇ 30: 0.05 ⁇ 5: 5-20: 0.01 ⁇ 5.
  • PPFD photon flux density
  • the thickness of the first rubber powder layer may be set to 0.1mm-0.5mm; the thickness of the second rubber powder layer may be set to 0.1mm-0.9mm, so that the ratio of photon flux density is in the above range Inside.
  • the blue LED chip has a luminescence peak in the range of 400 nm to 480 nm, or a combination of multi-wavelength blue LED chip with luminescence peak in the range of 400 nm to 480 nm.
  • the ultraviolet LED chip is an LED chip having a luminescence peak in the wavelength range of 320 nm to 400 nm, or the ultraviolet LED chip is a combination of multi-wavelength violet LED chip having a luminescence peak in the wavelength range of 320 nm to 400 nm.
  • the yellow phosphor is one or a combination of yellow phosphor such as silicate yellow powder, aluminate yellow powder, nitride and nitrogen oxide phosphor.
  • the red phosphor uses one of YAGG, YAGG: Ce 3+ , YAG: Eu 2+ , nitride red phosphor, Mn 4+ doped K 2 SiF 6 and K 2 SnF 6 deep red phosphor or Their combination.
  • the infrared phosphor is one or a combination of Cr 3+ , Ce 3+ , Yb 3+ multi-doped YAG near infrared phosphors, such as Y 3 Al 5 O 12 : Cr, Ce, Yb.
  • the adhesive is one or more of silica gel, epoxy resin, polymethyl methacrylate (PMMA), polycarbonate (PC), or photosensitive colloid. According to different needs, the corresponding glue is used in the crystal bonding process and the potting process.
  • the blue LED chip and the ultraviolet LED chip excite the red phosphor and infrared phosphor, which can not only form a full spectrum, but also highlight the photosynthesis spectrum.
  • increase the spectrum The composition of mid-ultraviolet light is particularly suitable for the cultivation of medicinal plants, which changes the need to use a variety of LED chip combinations such as red LED chips, blue LED chips, infrared LED chips, ultraviolet LED chips, green LED chips, etc.
  • the light formula that can be realized, the input cost of LED chips and the cost of circuits and heat sinks are greatly reduced (red LED chips, infrared LED chips, green LED chips are much more expensive than blue LED chips, and the luminous efficiency is very low).
  • the light formulation of the LED device for plant fill light of the present invention is more uniform, and the light emitting angle of the light source is small; however, in the plant fill light LED in the prior art, a large number of red LED chips are used, and infrared LED chips and green LED chips are used The small number makes it difficult to achieve uniform light quality distribution.
  • the LED device for plant supplementary light of the invention has longer life and lower heat dissipation cost.
  • the blue LED chip and the ultraviolet LED chip excite the red phosphor and the infrared phosphor, without using the red LED chip, infrared LED chip, and green LED chip, which greatly reduces the power of the plant growth light source, and the circuit design is simplified (blue LED, red LED chip ⁇ Infrared LED chips and green LED chips are complicated by different pressure drops. All blue LED chips are used to excite red phosphor, yellow phosphor and infrared phosphor to achieve the required spectrum, and the circuit design is simplified). Reduced, low circuit cost, greatly extended life.
  • the blue LED chip and the ultraviolet LED chip of the present invention excite the light source of red phosphor and infrared phosphor as a light formula to irradiate lettuce.
  • the content is 30% -50% higher than that of the red LED light source and the blue LED light source, and the cost of the light source is reduced by more than half.
  • This embodiment provides an LED device for plant supplementary light, which includes a substrate, an LED wafer, and a first adhesive powder layer.
  • the LED chip is any one selected from the group consisting of: a semiconductor light emitting diode; an organic light emitting diode OLED; a quantum dot light emitting diode QLED and a micro light emitting diode Micro-LED.
  • the LED chip is provided on the substrate, and preferably, the substrate is a PCB board, and the LED chip is installed on one surface of the substrate, and a heat dissipation device, such as a heat dissipation substrate, is installed on the other surface of the substrate.
  • a heat dissipation device such as a heat dissipation substrate
  • the LED chip includes one or a combination of a blue LED chip and an ultraviolet LED chip, that is, the LED chip can generate blue light of 400 nm to 480 nm and ultraviolet light with an emission peak of 320 nm to 400 nm.
  • a first adhesive powder layer is covered above the LED chip; in this embodiment, the first adhesive powder layer fixes the LED chip on the substrate, and it is an adhesive, red phosphor, and infrared fluorescence
  • the weight ratio of the adhesive, red phosphor and infrared phosphor is 100: 10-100: 10-40, preferably 100: 50: 20, that is, through the red phosphor Adding, blue light and ultraviolet light excite the red phosphor to produce red light, and by adding infrared phosphor, the blue light and ultraviolet light excite the infrared phosphor to produce infrared light.
  • red light 600nm-700nm
  • blue light 400nm ⁇ 470nm
  • Infrared light Green light:
  • the ratio of photon flux density (PPFD) of ultraviolet light is 70-90: 10-30: 0.05-5: 5-20: 0.01-5.
  • the thickness of the first rubber powder layer may be set to 0.1mm-0.5mm; the thickness of the second rubber powder layer may be set to 0.1mm-0.9mm, so that the ratio of photon flux density is in the above range Inside.
  • the blue LED chip has a luminescence peak in the range of 400 nm to 480 nm, or a combination of multi-wavelength blue LED chips with a luminescence peak in the range of 400 nm to 480 nm; the ultraviolet LED chip has a luminescence peak in the wavelength range of 320 nm to 400 nm LED chip, or ultraviolet LED chip is a combination of multi-wavelength violet LED chips with a wavelength in the range of 320nm ⁇ 400nm.
  • the yellow phosphor is one or a combination of yellow phosphor such as silicate yellow powder, aluminate yellow powder, nitride and nitrogen oxide phosphor.
  • the red phosphor uses one of YAGG, YAGG: Ce 3+ , YAG: Eu 2+ , nitride red phosphor, Mn 4+ doped K 2 SiF 6 and K 2 SnF 6 deep red phosphor or Their combination.
  • the infrared phosphor is one or a combination of Cr 3+ , Ce 3+ , Yb 3+ multi-doped YAG near infrared phosphors, such as Y 3 Al 5 O 12 : Cr, Ce, Yb.
  • the adhesive is one or more of silica gel, epoxy resin, polymethyl methacrylate (PMMA), polycarbonate (PC), or photosensitive colloid. According to different needs, the corresponding glue is used in the crystal bonding process and the potting process.
  • This embodiment provides an LED device for plant supplementary light, which is different from Embodiment 6 in that a yellow phosphor is used to replace the infrared phosphor, and at this time:
  • the weight ratio of the adhesive body and the yellow phosphor is 100: 10-40, and preferably, the weight ratio of the adhesive body and the yellow phosphor is 100: 25.
  • the weight ratio of the adhesive of the first adhesive powder layer to the red phosphor and the thickness of the first adhesive powder layer by controlling the weight ratio of the adhesive of the first adhesive powder layer to the red phosphor and the thickness of the first adhesive powder layer; at the same time controlling the adhesive of the second adhesive powder layer and the yellow phosphor
  • the weight ratio and the thickness of the second rubber powder layer make the ratio of the photon flux density (PPFD) of red light (600 nm to 700 nm): blue light (400 nm to 470 nm): infrared light: green light: ultraviolet light (PPFD) to 70 to 90: 10 ⁇ 30: 0.05 ⁇ 5: 5-20: 0.01 ⁇ 5.
  • PPFD photon flux density
  • the thickness of the first rubber powder layer may be set to 0.1mm-0.5mm; the thickness of the second rubber powder layer may be set to 0.1mm-0.9mm, so that the ratio of photon flux density is in the above range Inside.
  • the blue LED chip has a luminescence peak in the range of 400 nm to 480 nm, or a combination of multi-wavelength blue LED chip with luminescence peak in the range of 400 nm to 480 nm.
  • the yellow phosphor is one or a combination of yellow phosphor such as silicate yellow powder, aluminate yellow powder, nitride and nitrogen oxide phosphor.
  • the red phosphor uses one of YAGG, YAGG: Ce 3+ , YAG: Eu 2+ , nitride red phosphor, Mn 4+ doped K 2 SiF 6 and K 2 SnF 6 deep red phosphor or Their combination.
  • the adhesive is one or more of silica gel, epoxy resin, polymethyl methacrylate (PMMA), polycarbonate (PC), or photosensitive colloid. According to different needs, the corresponding glue is used in the crystal bonding process and the potting process.
  • This embodiment provides an LED device for plant supplementary light, which is different from Embodiment 7 in that a yellow phosphor is used to replace the infrared phosphor, and at this time:
  • the weight ratio of the adhesive, the red phosphor and the yellow phosphor is 100: 10-100: 10-40, and preferably can be set to 100: 50: 20, that is, by adding yellow phosphor, blue light and ultraviolet light
  • the red phosphor is excited to produce red light
  • the addition of yellow phosphor causes blue and ultraviolet light to excite the yellow phosphor to produce green light and infrared light, wherein the wavelength of the infrared light is 700-760 nm, and the optimal 730 nm .
  • red light 600nm-700nm
  • blue light 400nm ⁇ 470nm
  • Infrared light Green light:
  • the ratio of photon flux density (PPFD) of ultraviolet light is 70-90: 10-30: 0.05-5: 5-20: 0.01-5.
  • the first rubber powder layer may be set to 0.2 mm-1.4 mm, so that the ratio of the photon flux density is within the above range.
  • the blue LED chip has a luminescence peak in the range of 400 nm to 480 nm, or a combination of multi-wavelength blue LED chip with luminescence peak in the range of 400 nm to 480 nm.
  • the yellow phosphor is one or a combination of yellow phosphor such as silicate yellow powder, aluminate yellow powder, nitride and nitrogen oxide phosphor.
  • the red phosphor uses one of YAGG, YAGG: Ce 3+ , YAG: Eu 2+ , nitride red phosphor, Mn 4+ doped K 2 SiF 6 and K 2 SnF 6 deep red phosphor or Their combination.
  • the adhesive is one or more of silica gel, epoxy resin, polymethyl methacrylate (PMMA), polycarbonate (PC), or photosensitive colloid. According to different needs, the corresponding glue is used in the crystal bonding process and the potting process.
  • This embodiment provides a lamp including the LED device for plant supplementary light in Embodiments 6 to 9.
  • the lamp further includes an electrical connector and an LED driver; the LED device for plant light supplementation may be connected in series, or in parallel, or in series and parallel.
  • the PCB board is provided with an insulating layer and a conductive circuit, and one or more LED chips of the LED device for plant light supplementation are soldered on the lead circuit.
  • the conductive circuit is connected to the output of the LED driver; the LED driver is used to drive the LED device for plant light supplement.
  • the PCB board is a strip-shaped PCB board, a rectangular PCB board, a ring-shaped PCB board or a disc-shaped PCB board, and the substrate is aluminum nitride, copper substrate, copper alloy substrate, aluminum oxide, epoxy resin molding compound, silicon carbide, diamond , Silicon, graphite aluminum substrate, aluminum-iron alloy substrate, one of high thermal conductivity plastic substrate or aluminum plastic substrate.
  • This embodiment provides an LED light source for flip-type plant light supplement, which includes a substrate, an LED chip, a first adhesive powder layer and a second adhesive powder layer.
  • the LED chip is any one selected from the group consisting of: a semiconductor light emitting diode; an organic light emitting diode OLED; a quantum dot light emitting diode QLED and a micro light emitting diode Micro-LED.
  • the LED chip is provided on the substrate, and preferably, the substrate is a PCB board, and the LED chip is installed on one surface of the substrate, and a heat dissipation device, such as a heat dissipation substrate, is installed on the other surface of the substrate.
  • a heat dissipation device such as a heat dissipation substrate
  • the LED chip may be a blue LED chip, that is, the LED chip can generate blue light of 400 nm to 480 nm.
  • a first adhesive powder layer is provided between the LED wafer and the substrate, and a second adhesive powder layer is covered above the LED wafer; in this embodiment, the first adhesive powder layer fixes the LED wafer to the On the substrate, and it is a mixture of adhesive and red phosphor.
  • the second adhesive powder layer covers the LED wafer and completely wraps the LED wafer; in this embodiment, the second adhesive powder layer is a mixture of adhesive and yellow phosphor.
  • the first adhesive powder layer is a mixture of adhesive and yellow phosphor
  • the second adhesive powder layer is a mixture of adhesive and red phosphor
  • the weight ratio of the adhesive body and the red phosphor is 100: 10-150, and 100: 50 or 100: 100 can be selected as a preferred solution.
  • the red phosphor is excited by the blue light emitted by the LED chip to emit red light with a luminescence peak falling within the wavelength range of 605 nm to 680 nm.
  • the weight ratio of the adhesive body and the yellow phosphor is 100: 10-30, and preferably, the weight ratio of the adhesive body and the yellow phosphor is 100: 20.
  • green light and infrared light with a wavelength of 500 nm to 560 nm can be generated.
  • the green light can adjust vision and photosynthesis, and infrared is to adjust the light form of plants.
  • the weight ratio of the adhesive of the first adhesive powder layer to the red phosphor and the thickness of the first adhesive powder layer by controlling the weight ratio of the adhesive of the first adhesive powder layer to the red phosphor and the thickness of the first adhesive powder layer; at the same time controlling the adhesive of the second adhesive powder layer and the yellow phosphor
  • the weight ratio and the thickness of the second powder layer make the ratio of the photon flux density (PPFD) of red light (600nm ⁇ 680nm): blue light (420nm ⁇ 480nm): infrared light: green light: ultraviolet light to 70 ⁇ 90: 10 ⁇ 30: 1 ⁇ 30: 5-20: 0.01 ⁇ 1.
  • PPFD photon flux density
  • the thickness of the first rubber powder layer may be set to 0.1mm-0.5mm; the thickness of the second rubber powder layer may be set to 0.1mm-0.9mm, so that the ratio of photon flux density is in the above range Inside.
  • the blue LED chip has a luminescence peak in the range of 400 nm to 480 nm, or a combination of multi-wavelength blue LED chip with luminescence peak in the range of 400 nm to 480 nm.
  • the yellow phosphor is one or a combination of yellow phosphor such as silicate yellow powder, aluminate yellow powder, nitride and nitrogen oxide phosphor.
  • the red phosphor uses one of YAGG, YAGG: Ce 3+ , YAG: Eu 2+ , nitride red phosphor, Mn 4+ doped K 2 SiF 6 and K 2 SnF 6 deep red phosphor or Their combination.
  • the adhesive is one or more of silica gel, epoxy resin, polymethyl methacrylate (PMMA), polycarbonate (PC), or photosensitive colloid. According to different needs, the corresponding glue is used in the crystal bonding process and the potting process.
  • red phosphor and yellow phosphor excited by blue LED chips can not only form a full spectrum, but also highlight the photosynthetic characteristics of plant photosynthesis, which changes the need to use red LED chips in the prior art.
  • Blue LED chips, infrared LED chips, ultraviolet LED chips, green LED chips and other multi-LED chip combinations can achieve the optical formula, LED chip input costs and circuit and heat sink costs are greatly reduced (red LED chips, infrared LED chips, green The price of LED chips is much higher than that of blue LED chips, and the luminous efficiency is very low);
  • the light formula of the LED light source for flip-type plant fill light of the present invention is more uniform, and the light emitting angle of the light source can be controlled;
  • the use of LED chips is small, and it is very difficult to achieve a uniform light quality distribution.
  • the LED light source for flip-type plant supplementary light of the invention has longer life and lower heat dissipation cost.
  • the blue LED chip excites the combination of red phosphor and yellow phosphor, eliminating the need to use red LED chips, infrared LED chips, and green LED chips, greatly reducing the power of plant growth light sources, and simplifying the circuit design (blue LED, red LED chip, infrared LED)
  • the circuit is complicated due to the different working voltage drop of the chip and the green LED chip.
  • the blue LED chip can be used to excite the red phosphor, yellow phosphor and infrared phosphor to achieve the desired spectrum, the circuit design is simplified), the amount of capacitor usage is reduced, and the circuit Low cost and greatly prolonged life.
  • the light source of the blue LED chip of the invention excites the red phosphor and the yellow phosphor is used as the light formula to irradiate lettuce.
  • the soluble sugar content of lettuce treated by the light source of the invention is higher than that of the red
  • the fill light of the light LED light source and the blue LED light source is 30% -50% higher, and the cost of the light source is reduced by more than half.
  • This embodiment provides an LED light source for flip-type plant supplementary light, which is different from Embodiment 11 in that an infrared phosphor is used to replace the yellow phosphor, and at this time:
  • the weight ratio of the adhesive body and the infrared phosphor is 100: 10-30, and preferably, the weight ratio of the adhesive body and the infrared phosphor is 100: 25.
  • infrared light can be generated, wherein the wavelength of the infrared light is 700nm-760nm, optimally 730nm, thereby adjusting the plant light morphology through infrared.
  • the weight ratio of the adhesive of the first adhesive powder layer and the red phosphor, and the thickness of the first adhesive powder layer make the ratio of the photon flux density (PPFD) of red light (600nm ⁇ 680nm): blue light (420nm ⁇ 480nm): infrared light: green light: ultraviolet light to 70 ⁇ 90: 10 ⁇ 30: 1 ⁇ 30: 5-20: 0.01 ⁇ 1.
  • PPFD photon flux density
  • the thickness of the first rubber powder layer may be set to 0.1mm-0.5mm; the thickness of the second rubber powder layer may be set to 0.1mm-0.9mm, so that the ratio of photon flux density is in the above range Inside.
  • the blue LED chip has a luminescence peak in the range of 400 nm to 480 nm, or a combination of multi-wavelength blue LED chip with luminescence peak in the range of 400 nm to 480 nm.
  • the red phosphor uses one of YAGG, YAGG: Ce 3+ , YAG: Eu 2+ , nitride red phosphor, Mn 4+ doped K 2 SiF 6 and K 2 SnF 6 deep red phosphor or Their combination.
  • the infrared phosphor is one of Cr 3+ , Ce 3+ , and Yb 3+ multi-doped YAG near-infrared phosphor, or a combination thereof, such as Y 3 Al 5 O 12 : Cr, Ce, Yb.
  • the adhesive is one or more of silica gel, epoxy resin, polymethyl methacrylate (PMMA), polycarbonate (PC), or photosensitive colloid. According to different needs, the corresponding glue is used in the crystal bonding process and the potting process.
  • This embodiment provides a lamp including the LED light source for flip-type plant supplementary light in Embodiments 11 to 12.
  • the lamp further includes an electrical connector and an LED driver; the LED light source for flip-type plant supplementary light can be connected in series, or in parallel, or in series and parallel.
  • the PCB board is provided with an insulating layer and a conductive circuit, and one or more LED chips of the LED light source for the flip-chip plant light supplement are soldered on the lead circuit.
  • the conductive circuit is connected to the output of the LED driver; the LED driver is used to drive the LED light source for the flip-type plant supplementary light.
  • the PCB board is a strip-shaped PCB board, a rectangular PCB board or a disc-shaped PCB board, and may adopt aluminum nitride, copper substrate, copper alloy substrate, aluminum oxide, epoxy resin molding compound, silicon carbide, diamond, silicon, A preparation of graphite aluminum substrate, aluminum-iron alloy substrate, high thermal conductivity plastic substrate or aluminum coated substrate.
  • This embodiment provides an LED device for flip-type plant light supplement, which includes a substrate, an LED chip, a first adhesive powder layer and a second adhesive powder layer.
  • the LED chip is any one selected from the group consisting of: a semiconductor light emitting diode; an organic light emitting diode OLED; a quantum dot light emitting diode QLED and a micro light emitting diode Micro-LED.
  • the LED chip is provided on the substrate, and preferably, the substrate is a PCB board, and the LED chip is installed on one surface of the substrate, and a heat dissipation device, such as a heat dissipation substrate, is installed on the other surface of the substrate.
  • a heat dissipation device such as a heat dissipation substrate
  • the LED chip includes one or a combination of a blue LED chip and an ultraviolet LED chip, that is, the LED chip can generate blue light with a wavelength of 400 nm to 480 nm and near ultraviolet light with a wavelength of 320 nm to 400 nm.
  • a first adhesive powder layer is provided between the LED wafer and the substrate, and a second adhesive powder layer is covered above the LED wafer; in this embodiment, the first adhesive powder layer fixes the LED wafer to the On the substrate, and it is a mixture of adhesive and red phosphor, wherein the weight ratio of the adhesive and red phosphor is 100: 10-150, and 100: 50 can be selected as a preferred solution.
  • the red phosphor is excited by the blue light and ultraviolet light emitted by the LED chip to emit red light with a luminescence peak falling within the wavelength range of 605 nm-680 nm.
  • the second adhesive powder layer completely wraps the LED chip; in this embodiment, the second adhesive powder layer is a mixture of an adhesive body and an infrared phosphor, wherein the weight of the adhesive body and the infrared phosphor The ratio is 100: 10-40, and preferably, the weight ratio of the adhesive body and the infrared phosphor is 100: 25.
  • infrared light can be generated through the setting of infrared phosphors and the excitation of infrared phosphors with blue light and ultraviolet light, wherein the infrared light has a wavelength of 700nm-760nm, optimally 730nm, to adjust the plant light morphology.
  • the weight ratio and the thickness of the second rubber powder layer make the ratio of the photon flux density (PPFD) of red light (600 nm to 700 nm): blue light (400 nm to 470 nm): infrared light: green light: ultraviolet light (PPFD) to 70 to 90: 10 ⁇ 30: 0.05 ⁇ 5: 5-20: 0.01 ⁇ 5.
  • PPFD photon flux density
  • the thickness of the first rubber powder layer may be set to 0.1mm-0.5mm; the thickness of the second rubber powder layer may be designed to be 0.1mm-0.9mm, so that the ratio of photon flux density is in the above range Inside.
  • the blue LED chip has a luminescence peak in the range of 400 nm to 480 nm, or a combination of multi-wavelength blue LED chip with luminescence peak in the range of 400 nm to 480 nm.
  • the yellow phosphor is one or a combination of yellow phosphor such as silicate yellow powder, aluminate yellow powder, nitride and nitrogen oxide phosphor.
  • the red phosphor uses one of YAGG, YAGG: Ce 3+ , YAG: Eu 2+ , nitride red phosphor, Mn 4+ doped K 2 SiF 6 and K 2 SnF 6 deep red phosphor or Their combination.
  • the infrared phosphor is one or a combination of Cr 3+ , Ce 3+ , Yb 3+ multi-doped YAG near infrared phosphors, such as Y 3 Al 5 O 12 : Cr, Ce, Yb.
  • the adhesive is one or more of silica gel, epoxy resin, polymethyl methacrylate (PMMA), polycarbonate (PC), or photosensitive colloid. According to different needs, the corresponding glue is used in the crystal bonding process and the potting process.
  • the blue LED chip and the ultraviolet LED chip excite the red phosphor and infrared phosphor, which can not only form a full spectrum, but also highlight the photosynthesis spectrum.
  • increase the spectrum The composition of mid-ultraviolet light is particularly suitable for the cultivation of medicinal plants, which changes the need to use multiple LED chip combinations such as red LED chips, blue LED chips, infrared LED chips, ultraviolet LED chips, green LED chips, etc.
  • the realized light formula, LED chip input cost and circuit and heat sink cost are greatly reduced (red LED chip, infrared LED chip, green LED chip price is much higher than blue LED chip, and the luminous efficiency is very low).
  • the light formulation of the LED device for flip-type plant supplementary light of the present invention is more uniform, and the light emitting angle of the light source is small; however, in the prior art plant supplementary LED, the number of red LED chips is large, and the infrared LED chip, green The number of LED chips is small, and it is very difficult to achieve a uniform light quality distribution.
  • the LED device for flip-type plant light supplement of the invention has longer life and lower heat dissipation cost.
  • the blue LED chip and the ultraviolet LED chip excite the red phosphor and the infrared phosphor, without using the red LED chip, infrared LED chip, and green LED chip, which greatly reduces the power of the plant growth light source, and the circuit design is simplified (blue LED, red LED chip ⁇ Infrared LED chips and green LED chips are complicated by different pressure drops. All blue LED chips are used to excite red phosphor, yellow phosphor and infrared phosphor to achieve the required spectrum, and the circuit design is simplified). Reduced, low circuit cost, greatly extended life.
  • the blue LED chip and the ultraviolet LED chip of the present invention excite the light source of red phosphor and infrared phosphor as a light formula to irradiate lettuce.
  • the content is 30% -50% higher than that of the red LED light source and the blue LED light source, and the cost of the light source is reduced by more than half.
  • This embodiment provides an LED device for flip-type plant supplementary light, which is different from Embodiment 14 in that a yellow phosphor is used to replace the infrared phosphor, and at this time:
  • the weight ratio of the adhesive body and the yellow phosphor is 100: 10-40, and preferably, the weight ratio of the adhesive body and the yellow phosphor is 100: 25.
  • the weight ratio of the adhesive of the first adhesive powder layer to the red phosphor and the thickness of the first adhesive powder layer by controlling the weight ratio of the adhesive of the first adhesive powder layer to the red phosphor and the thickness of the first adhesive powder layer; at the same time controlling the adhesive of the second adhesive powder layer and the yellow phosphor
  • the weight ratio and the thickness of the second rubber powder layer make the ratio of the photon flux density (PPFD) of red light (600 nm to 700 nm): blue light (400 nm to 470 nm): infrared light: green light: ultraviolet light (PPFD) to 70 to 90: 10 ⁇ 30: 0.05 ⁇ 5: 5-20: 0.01 ⁇ 5.
  • PPFD photon flux density
  • the thickness of the first rubber powder layer may be set to 0.1mm-0.5mm; the thickness of the second rubber powder layer may be designed to be 0.1mm-0.9mm, so that the ratio of photon flux density is in the above range Inside.
  • the blue LED chip has a luminescence peak in the range of 400 nm to 480 nm, or a combination of multi-wavelength blue LED chip with luminescence peak in the range of 400 nm to 480 nm.
  • the yellow phosphor is one or a combination of yellow phosphor such as silicate yellow powder, aluminate yellow powder, nitride and nitrogen oxide phosphor.
  • the red phosphor uses one of YAGG, YAGG: Ce 3+ , YAG: Eu 2+ , nitride red phosphor, Mn 4+ doped K 2 SiF 6 and K 2 SnF 6 deep red phosphor or Their combination.
  • the adhesive is one or more of silica gel, epoxy resin, polymethyl methacrylate (PMMA), polycarbonate (PC), or photosensitive colloid. According to different needs, the corresponding glue is used in the crystal bonding process and the potting process.
  • This embodiment provides a lamp including the LED device for flip-type plant supplementary light in Embodiments 14 to 15.
  • the lamp further includes an electrical connector and an LED driver; the LED device for flip-type plant supplementary light can be connected in series, or in parallel, or in series and parallel.
  • the PCB board is provided with an insulating layer and a conductive line, and one or more LED chips of the LED device for the flip-chip plant light supplement are soldered on the lead circuit.
  • the conductive circuit is connected to the output of the LED driver; the LED driver is used to drive the LED device for the flip-type plant light supplement.
  • the PCB board is a strip-shaped PCB board, a rectangular PCB board or a disc-shaped PCB board, and may adopt aluminum nitride, copper substrate, copper alloy substrate, aluminum oxide, epoxy resin molding compound, silicon carbide, diamond, silicon, A material of graphite aluminum substrate, aluminum-iron alloy substrate, high thermal conductivity plastic substrate or aluminum coated substrate.

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Abstract

一种植物补光用LED光源及使用光源的灯具，植物补光用LED光源包括基板(4)、LED晶片(1)、第一胶粉层(2)和第二胶粉层(3)；第一胶粉层(2)将LED晶片(1)固定于基板上(4)，且其为胶粘体和红色荧光粉的混合物；第二胶粉层(3)覆盖于第一胶粉层(2)上。植物补光用LED光源，通过蓝光LED晶片(6)激发红色荧光粉和黄色荧光粉，既能形成全光谱，又能突出植物光合作用特征的光配方，改变了现有技术中需要通过使用红色LED晶片、蓝色LED晶片、红外LED晶片、紫外LED晶片、绿色LED晶片多LED晶片组合才能实现的植物光配方，LED晶片投入成本和电路以及散热器成本大大降低。

Description

植物补光用LED光源及使用该光源的灯具 技术领域
本发明涉及一种植物补光用LED光源及使用该光源的灯具，属于设施农业光照技术领域。
背景技术
根据植物的光生理特性，光辐射对植物的光合作用、生长发育、形态建成和植物代谢等都有调控作用。照射在植物上的不同波段的光对植物的生理影响不同，因而不同波段的光参与光合作用的权重也不同，并且随植物品种及生长的阶段而变化。叶绿素在植株体内负责光能的吸收、传递和转化，类胡萝卜素则行使光能捕获和光破坏防御两大功能，它们在光合作用中起着非常重要的作用。叶绿素a的最大吸收峰为410nm、430nm和660nm；叶绿素b的最大吸收峰为430nm、455nm和640nm。类胡萝卜素是重要的辅助色素，其所吸收的光能正好与叶绿素互补，所以能帮助叶绿素接收光能。类胡萝卜素吸收带在400nm～500nm的蓝紫光区，藻蓝素的吸收光谱最大值是在橙红光部分，藻红素则吸收光谱最大值是在绿光部分。
光照条件中光质的影响，尤其是光谱中红光(600nm～700nm，R)与远红光(700nm～800nm，FR)光的比值(R/FR)的作用日益受到人们的重视。光谱中红光与远红光的比值(R/FR)对植物体内赤霉素(CA)的含量的调控、植物形态建成、调节植株高度具有重要影响。科学家通过人工控制植物生长环境中的红光(R)或远红光(FR)的光量子流密度，改变R/FR的比值来调节植株的形态。当R/FR比值变大时植物的茎节间距变小矮化：反之当R/FR比值变小时则植物有 伸长的倾向。
绿色植物在生长的过程中，需要可见光进行光合作用。但是众所周知，可见光是一种复合光，不同的植物在生长过程中，对可见光中的不同颜色的光的需求也不尽相同。
越来越多的研究表明，适当地将不同颜色的光以不同的比例进行混合照射，将有助于植物的生长。
但是，在具体的实现形式上，实际应用中，需增加光源中红色LED或者远红色LED的数量，来实现R/FR比值的调节，从而达到控制植株形态的目的；通过增加绿色LED的数量来弥补光谱中的不足。一般是通过采用多个不同颜色的LED光源进行组合来达到实现不同比例的不同光质的光环境，这对使用者来说极其不方便，如果在组合LED光源的过程中，不同颜色的LED光源的比例发生了错误，也就难以达到植物增产增质的目的。
现有技术中的LED光源如中国专利201180055432.7，201210414873.8，以及201210375582.2所记载。
但是，上述三个专利均通过蓝光激发红色荧光粉，同时发出红蓝光用于植物光合作用，但是需要通过增加紫外发光二极管、绿光发光二极管或者红外发光二极管来实现光谱中紫外光、绿光和近红外光的补充；由此，带来以下不足：
一是光谱中缺失重要成分，如紫外光、绿光或者红外光等，会在植物光形态建成上出现严重不足，影响植物生长发育和品质；
二是通过增加紫外发光二极管、绿光发光二极管或者红外发光二极管来弥补植物生物有效辐射光谱中的不足，增强光合作用或者是调整光质比例，大大增加了LED光源投入成本，如红光和紫外光LED晶片的价格是蓝光LED晶片价格的5-8倍；
三是由于增加紫外发光二极管、绿光发光二极管或者红外发光二极管，其光效低，大大增加后续的运营和维护成本，散热成本相应也增加，能耗大大增加；
四是光形态建成中紫外光(280nm～400nm)、和红外光(700nm～800nm)的光谱所占比例，在植物生物有效辐射(280nm～800nm)的光谱中比较低，LED发光角度小，所以在光谱均匀照射设计方面就很难达到要求。在红外或紫外LED光源个数较少的前提下很难将红外或紫外LED光源均匀配置，或即使将红外或紫外LED光源的扩散角指向性调整成最佳，紫外光、红外光与红光与蓝光的混色也不充分，因此易发生光谱分布不均。
发明内容
本发明目的是提供一种植物补光用LED光源及使用该光源的灯具，其在单一的LED照明设备中发出固定比例的不同光谱组成的光配方，方便生产制造、成本控制和使用者的使用。
本发明解决技术问题采用如下技术方案：一种植物补光用LED光源，其包括基板、LED晶片、第一胶粉层和第二胶粉层；
LED晶片安装于所述基板的一个表面上；其中，所述LED晶片为蓝光LED晶片；
在所述LED晶片的上方覆盖有第一胶粉层和第二胶粉层；
所述第一胶粉层将LED晶片固定于所述基板上，且其为胶粘体和红色荧光粉的混合物；
所述第二胶粉层覆盖于所述第一胶粉层上，并完整包裹所述第一胶粉层；所述第二胶粉层为胶粘体和黄色荧光粉的混合物；或者第二胶粉层为胶粘体和红外荧光粉的混合物。
本发明解决技术问题还采用如下技术方案：一种植物补光用LED光源，其特征在于，包括基板、LED晶片和第一胶粉层；
LED晶片安装于所述基板的一个表面上；其中，所述LED晶片为蓝光LED晶片；
在所述LED晶片的上方覆盖有第一胶粉层；
所述第一胶粉层将LED晶片固定于所述基板上，且其为胶粘体、 红色荧光粉和黄色荧光粉的混合物；或者所述第一胶粉层为胶粘体、红色荧光粉和红外荧光粉的混合物。
本发明解决技术问题还采用如下技术方案：一种植物补光用LED装置，其包括基板、LED晶片、第一胶粉层和第二胶粉层；
LED晶片安装于所述基板的一个表面上；其中，所述LED晶片包括蓝光LED晶片和紫外LED晶片中的一种或者它们的组合；
在所述LED晶片的上方覆盖有第一胶粉层和第二胶粉层；
所述第一胶粉层将LED晶片固定于所述基板上，且其为胶粘体和红色荧光粉的混合物；
所述第二胶粉层覆盖于所述第一胶粉层上，并完整包裹所述第一胶粉层；所述第二胶粉层为胶粘体和红外荧光粉的混合物；或者第二胶粉层为胶粘体和黄色荧光粉的混合物。
本发明解决技术问题还采用如下技术方案：一种植物补光用LED装置，其包括基板、LED晶片和第一胶粉层；
LED晶片安装于所述基板的一个表面上；其中，所述LED晶片包括蓝光LED晶片和紫外LED晶片中的一种或者它们的组合；
在所述LED晶片的上方覆盖有第一胶粉层；
所述第一胶粉层将LED晶片固定于所述基板上，且其为胶粘体、红色荧光粉和黄色荧光粉的混合物；或者所述第一胶粉层为胶粘体、红色荧光粉和红外荧光粉的混合物。
本发明解决技术问题还采用如下技术方案：一种倒装型植物补光用LED光源，其包括基板、LED晶片、第一胶粉层和第二胶粉层；
LED晶片安装于所述基板的一个表面上；其中，所述LED晶片为蓝光LED晶片；
在所述LED晶片和基板之间设置有第一胶粉层，在所述LED晶片的上方覆盖有第二胶粉层；
所述第一胶粉层将LED晶片固定于所述基板上，且其为胶粘体和红色荧光粉的混合物；
所述第二胶粉层覆盖于所述LED晶片上，并完整包裹所述LED晶片；所述第二胶粉层为胶粘体和黄色荧光粉的混合物；或者第二胶粉层为胶粘体和红外荧光粉的混合物。
本发明解决技术问题还采用如下技术方案：一种倒装型植物补光用LED光源，其包括基板、LED晶片、第一胶粉层和第二胶粉层；
LED晶片安装于所述基板的一个表面上；其中，所述LED晶片为蓝光LED晶片；
在所述LED晶片和基板之间设置有第一胶粉层，在所述LED晶片的上方覆盖有第二胶粉层；
所述第一胶粉层将LED晶片固定于所述基板上，且所述第一胶粉层为胶粘体和黄色荧光粉的混合物；或者第一胶粉层为胶粘体和红外荧光粉的混合物；
所述第二胶粉层覆盖于所述LED晶片上，并完整包裹所述LED晶片；所述第二胶粉层为胶粘体和红色荧光粉的混合物。
本发明解决技术问题还采用如下技术方案：一种灯具，其包括上述的植物补光用LED光源。
本发明具有如下有益效果：本发明提供的发电砖，可铺设在城市的步行街、广场、马路和楼面屋顶或作为建筑物的墙壁使用，通过将收集的太阳热能转为电能，供周围用电设施使用，减少了外部杂乱的布线，同时减少了成本。
附图说明
图1为本发明实施例1-5所述的植物补光用LED光源的结构示意图；
图2为本发明实施例6-10所述的植物补光用LED光源的结构示意图；
图3为本发明实施例11-13所述的植物补光用LED光源的结构示意图；
图4为本发明实施例14-16所述的植物补光用LED光源的结构示意图；
图中标记示意为：1-LED晶片；2-第一胶粉层；3-第二胶粉层；4-基板；5-紫外LED晶片；6-蓝光LED晶片；7-PCB板；8-导电线路。
具体实施方式
下面结合实施例及附图对本发明的技术方案作进一步阐述。
实施例1
本实施例提供了一种植物补光用LED光源，包括基板、LED晶片、第一胶粉层和第二胶粉层。
所述LED晶片是从包括以下项的组中选择的任一项：半导体发光二极管；有机发光二极管OLED；量子点发光二极管QLED和微发光二极管Micro-LED。
所述LED晶片设置于所述基板上，并且优选地，所述基板为PCB板，LED晶片安装于所述基板的一个表面上，所述基板的另一个表面上安装有散热装置，例如散热基座等部件，以将LED晶片工作时产生的热量向外散发，使得LED晶片保持较好的工作温度，LED晶片工作状态稳定，使用寿命长。
其中，所述LED晶片可以为蓝光LED晶片，即所述LED晶片能生成400nm～480nm的蓝光。
在所述LED晶片的上方覆盖有第一胶粉层和第二胶粉层；本实施例中，所述第一胶粉层将LED晶片固定于所述基板上，且其为胶粘体和红色荧光粉的混合物，其中，所述胶粘体和红色荧光粉的重量比为100:10-150，并且可以选择100:50，或者100:100作为优选方案。
所述红色荧光粉受到LED晶片所发出的蓝光的激发而发出发光峰落在波长红光605nm～680nm的范围内的红光。
所述第二胶粉层覆盖于所述第一胶粉层上，并完整包裹所述第一胶粉层；本实施例中，所述第二胶粉层为胶粘体和黄色荧光粉的混合 物，其中，所述胶粘体和黄色荧光粉的重量比为100:10-30，并且优选地，所述胶粘体和黄色荧光粉的重量比为100:20。
也就是说，通过黄色荧光粉的设置，以及蓝光激发黄色荧光粉，能够产生500nm～560nm波长的绿光以及红外光，绿光可以调整视觉和光合作用，红外是调整植物光形态。
本实施例中，通过控制第一胶粉层的胶粘体和红色荧光粉的重量比，以及该第一胶粉层的厚度；同时控制第二胶粉层的胶粘体和黄色荧光粉的重量比，以及该第二胶粉层的厚度，使得红光(600nm～680nm):蓝光(420nm～480nm):红外光:绿光:紫外光的光子通量密度的比例为(PPFD)为70～90:10～30:1～30:5-20:0.01～1。
优选地，所述第一胶粉层的厚度可以设置为0.1mm-0.5mm；所述第二胶粉层的厚度可以设置为0.1mm-0.9mm，以使得光子通量密度的比例在上述范围内。
蓝光LED晶片在400nm～480nm范围内具有发光峰，或者为在400nm～480nm的范围内拥有发光峰的多波长蓝光LED晶片组合。
所述黄色荧光粉为硅酸盐黄粉、铝酸盐黄粉，氮化物和氮氧化物荧光粉等黄色荧光粉中的一种或者组合。
所述红色荧光粉采用YAGG、YAGG:Ce 3+、YAG:Eu 2+、氮化物红色荧光粉、Mn 4+掺杂的K 2SiF 6和K 2SnF 6深红色荧光粉其中的一种或者它们的组合。
所述胶粘体为硅胶、环氧树脂、聚甲基丙烯酸甲醋(PMMA)、聚碳酸醋(PC)，或感光胶体中的一种或者多种组合。根据不同的需要，固晶过程和灌封过程采用相应的胶。
相比于现有技术，通过蓝光LED晶片激发红色荧光粉和黄色荧光粉组合，既能形成全光谱，又能突出植物光合作用特征的光配方，改变了现有技术中需要通过使用红色LED晶片、蓝色LED晶片、红外LED晶片、紫外LED晶片、绿色LED晶片等多晶片组合才能实现的光配方，LED晶片投入成本和电路以及散热器成本大大降低(红色LED 晶片、红外LED晶片、绿色LED晶片价格远远高于蓝光LED晶片，且发光效率很低)；
而且，本发明的植物补光用LED光源的光配方更加均匀，光源发光角度可控；但是现有技术中的植物补光LED中，红色LED晶片使用量大，红外LED晶片、绿色LED晶片使用量小，要实现均匀的光质分布难度很大。
本发明的植物补光用LED光源寿命更长，散热成本更低。蓝光LED晶片激发红色荧光粉和黄色荧光粉组合，无需使用红色LED晶片、红外LED晶片、绿色LED晶片，大大降低植物生长光源的功率，而且电路设计简单化(蓝光LED、红色LED晶片、红外LED晶片、绿色LED晶片工作压降不同所致电路复杂化，全用蓝光LED晶片激发红色荧光粉与黄色荧光粉就可实现所需光谱，电路设计简化)，电容使用量减少，电路成本低，寿命大大延长。
本发明的蓝光LED晶片激发红色荧光粉和黄色荧光粉的光源作为光配方照射生菜，结果发现：在同等光量子流密度辐照下，采用本发明的光源处理的生菜中，可溶性糖含量较采用红光LED光源和蓝光LED光源的补光下高出30％-50％，而且光源的成本下降一半以上。
而且在同等光量子流密度辐照下，本发明在R/FR＝2.5处理下菊花花径及花梗长度比最大，植株生长更健壮、提高切花菊的观赏品质，有效控制花期提高花整齐度。
实施例2
本实施例提供了一种植物补光用LED光源，包括基板、LED晶片和第一胶粉层。
所述LED晶片是从包括以下项的组中选择的任一项：半导体发光二极管；有机发光二极管OLED；量子点发光二极管QLED和微发光二极管Micro-LED。
所述LED晶片设置于所述基板上，并且优选地，所述基板为PCB 板，LED晶片安装于所述基板的一个表面上，所述基板的另一个表面上安装有散热装置，例如散热基座等部件，以将LED晶片工作时产生的热量向外散发，使得LED晶片保持较好的工作温度，LED晶片工作状态稳定，使用寿命长。
其中，所述LED晶片可以为蓝光LED晶片，即所述LED晶片能生成450nm～480nm的蓝光。
在所述LED晶片的上方覆盖有第一胶粉层；本实施例中，所述第一胶粉层将LED晶片固定于所述基板上，且其为胶粘体、红色荧光粉和黄色荧光粉的混合物，其中，所述胶粘体、红色荧光粉和黄色荧光粉的重量比为100:10-100:10-30，优选地可以设置为100:50:20，即通过红色荧光粉的加入，蓝光激发红色荧光粉产生红光，并且通过黄色荧光粉的加入，使得蓝光激发黄色荧光粉，产生绿光和红外。
本实施例中，通过控制第一胶粉层的胶粘体、红色荧光粉和黄色荧光粉的重量比，以及该第一胶粉层的厚度；使得红光(600nm～680nm):蓝光(420nm～480nm):红外光:绿光:紫外光的光子通量密度的比例为(PPFD)为70～90:10～30:1～30:5-20:0.01～1。
本实施例中，可以将上述第一胶粉层的厚度设置为0.2mm～1.4mm，以使得光子通量密度的比例在上述范围内。
蓝光LED晶片在400nm～480nm范围内具有发光峰，或者为在400nm～480nm的范围内拥有发光峰的多波长蓝光LED晶片组合。
所述黄色荧光粉为硅酸盐黄粉、铝酸盐黄粉，氮化物和氮氧化物荧光粉等黄色荧光粉中的一种或者组合。
所述红色荧光粉采用YAGG、YAGG:Ce 3+、YAG:Eu 2+、氮化物红色荧光粉、Mn 4+掺杂的K 2SiF 6和K 2SnF 6深红色荧光粉其中的一种或者它们的组合。
所述胶粘体为硅胶、环氧树脂、聚甲基丙烯酸甲醋(PMMA)、聚碳酸醋(PC)，或感光胶体中的一种或者多种组合。根据不同的需要，固晶过程和灌封过程采用相应的胶。
实施例3
本实施例提供了一种植物补光用LED光源，其与实施例1的不同之处在于，使用红外荧光粉替换黄色荧光粉，此时：
所述胶粘体和红外荧光粉的重量比为100:10-30，并且优选地，所述胶粘体和红外荧光粉的重量比为100:25。
也就是说，通过红外荧光粉的设置，以及蓝光激发红外荧光粉，能够产生红外光，其中，所述红外光的波长为700nm-760nm，最优的730nm，从而通过红外调整植物光形态。
本实施例中，通过控制第一胶粉层的胶粘体和红色荧光粉的重量比，以及该第一胶粉层的厚度；同时控制第二胶粉层的胶粘体和红外荧光粉的重量比，以及该第二胶粉层的厚度，使得红光(600nm～680nm):蓝光(420nm～480nm):红外光:绿光:紫外光的光子通量密度的比例为(PPFD)为70～90:10～30:1～30:5-20:0.01～1。
优选地，所述第一胶粉层的厚度可以设置为0.1mm-0.5mm；所述第二胶粉层的厚度可以设置为0.1mm-0.9mm，以使得光子通量密度的比例在上述范围内。
蓝光LED晶片在400nm～480nm范围内具有发光峰，或者为在400nm～480nm的范围内拥有发光峰的多波长蓝光LED晶片组合。
所述红色荧光粉采用YAGG、YAGG:Ce 3+、YAG:Eu 2+、氮化物红色荧光粉、Mn 4+掺杂的K 2SiF 6和K 2SnF 6深红色荧光粉其中的一种或者它们的组合。
所述红外荧光粉为Cr 3+、Ce 3+、Yb 3+多掺杂的YAG近红外荧光粉其中的一种或者它们的组合，如Y 3Al 5O 12:Cr,Ce,Yb。
所述胶粘体为硅胶、环氧树脂、聚甲基丙烯酸甲醋(PMMA)、聚碳酸醋(PC)，或感光胶体中的一种或者多种组合。根据不同的需要，固晶过程和灌封过程采用相应的胶。
实施例4
本实施例提供了一种植物补光用LED光源，其与实施例2的不同之处在于，使用红外荧光粉替换黄色荧光粉，此时：
所述胶粘体、红色荧光粉和红外荧光粉的重量比为100:10-100:10-40，优选地可以设置为100:50:20，即通过红色荧光粉的加入，蓝光激发红色荧光粉产生红光，并且通过红外荧光粉的加入，使得蓝光激发红外荧光粉，产生红外光，其中，所述红外光的波长为700nm-760nm，最优的730nm。
本实施例中，通过控制第一胶粉层的胶粘体、红色荧光粉和红外荧光粉的重量比，以及该第一胶粉层的厚度；使得红光(600nm～680nm):蓝光(420nm～480nm):红外光:绿光:紫外光的光子通量密度的比例为(PPFD)为70～90:10～30:1～30:5-20:0.01～1。
本实施例中，可以将上述第一胶粉层的厚度设置为0.2mm-1.4mm，以使得光子通量密度的比例在上述范围内。
蓝光LED晶片在400nm～480nm范围内具有发光峰，或者为在400nm～480nm的范围内拥有发光峰的多波长蓝光LED晶片组合。
所述红色荧光粉采用YAGG、YAGG:Ce 3+、YAG:Eu 2+、氮化物红色荧光粉、Mn 4+掺杂的K 2SiF 6和K 2SnF 6深红色荧光粉其中的一种或者它们的组合；所述红外荧光粉为Cr 3+、Ce 3+、Yb 3+多掺杂的YAG近红外荧光粉其中的一种或者它们的组合，如Y 3Al 5O 12:Cr,Ce,Yb。
所述胶粘体为硅胶、环氧树脂、聚甲基丙烯酸甲醋(PMMA)、聚碳酸醋(PC)，或感光胶体中的一种或者多种组合。根据不同的需要，固晶过程和灌封过程采用相应的胶。
实施例5
本实施例提供一种灯具，其包括实施例1至4中的植物补光用LED光源。
而且，所述灯具还包括电连接器和LED驱动器；所述植物补光用 LED光源可以串联连接，或者并联连接，或者串并联连接。
所述PCB板上设置有绝缘层和导电线路，所述导电线路通过引线连接于LED晶片的正极和负极，从而实现LED晶片的电路连接。
所述导电线路与LED驱动器输出连接；所述LED驱动器用于驱动所述植物补光用LED光源。
所述PCB板为条形PCB板、矩形PCB板或圆盘形PCB板，并可以采用氮化铝、铜基板、铜合金基板、氧化铝、环氧树脂模塑料、碳化硅、金刚石、硅、石墨铝基板、铝铁合金基板中、高导热塑料基板或铝包塑基板的一种。
实施例6
本实施例提供了一种植物补光用LED装置，包括基板、LED晶片、第一胶粉层和第二胶粉层。
所述LED晶片是从包括以下项的组中选择的任一项：半导体发光二极管；有机发光二极管OLED；量子点发光二极管QLED和微发光二极管Micro-LED。
所述LED晶片设置于所述基板上，并且优选地，所述基板为PCB板，LED晶片安装于所述基板的一个表面上，所述基板的另一个表面上安装有散热装置，例如散热基座等部件，以将LED晶片工作时产生的热量向外散发，使得LED晶片保持较好的工作温度，LED晶片工作状态稳定，使用寿命长。
其中，所述LED晶片包括蓝光LED晶片和紫外LED晶片中的一种或者它们的组合，即所述LED晶片能生成波长为400nm～480nm的蓝光以及波长为320nm～400nm近紫外光。
在所述LED晶片的上方覆盖有第一胶粉层和第二胶粉层；本实施例中，所述第一胶粉层将LED晶片固定于所述基板上，且其为胶粘体和红色荧光粉的混合物，其中，所述胶粘体和红色荧光粉的重量比为100:10-150，并且可以选择100:50，或者100:100作为优选方案。
所述红色荧光粉受到LED晶片所发出的蓝光和紫外光的激发而发出发光峰落在波长605nm-680nm的范围内的红光。
所述第二胶粉层覆盖于所述第一胶粉层上，并完整包裹所述第一胶粉层；本实施例中，所述第二胶粉层为胶粘体和红外荧光粉的混合物，其中，所述胶粘体和红外荧光粉的重量比为100:10-40，并且优选地，所述胶粘体和红外荧光粉的重量比为100:25。
也就是说，通过红外荧光粉的设置，以及蓝光和紫外光激发红外荧光粉，能够产生红外光，其中，所述红外光的波长为700nm-760nm，最优的730nm，以调整植物光形态。
本实施例中，通过控制第一胶粉层的胶粘体和红色荧光粉的重量比，以及该第一胶粉层的厚度；同时控制第二胶粉层的胶粘体和红外荧光粉的重量比，以及该第二胶粉层的厚度，使得红光(600nm～700nm)：蓝光(400nm～470nm)：红外光：绿光：紫外光的光子通量密度的比例(PPFD)为70～90：10～30：0.05～5:5-20：0.01～5之间。
优选地，所述第一胶粉层的厚度可以设置为0.1mm-0.5mm；所述第二胶粉层的厚度可以设置为0.1mm-0.9mm，以使得光子通量密度的比例在上述范围内。
蓝光LED晶片在400nm～480nm范围内具有发光峰，或者为在400nm～480nm的范围内拥有发光峰的多波长蓝光LED晶片组合。
所述紫外LED晶片为波长在320nm～400nm的范围内拥有发光峰的LED晶片，或者紫外LED晶片为波长在320nm～400nm的范围内拥有发光峰的多波长紫光LED晶片组合。
所述黄色荧光粉为硅酸盐黄粉、铝酸盐黄粉，氮化物和氮氧化物荧光粉等黄色荧光粉中的一种或者组合。
所述红色荧光粉采用YAGG、YAGG:Ce 3+、YAG:Eu 2+、氮化物红色荧光粉、Mn 4+掺杂的K 2SiF 6和K 2SnF 6深红色荧光粉其中的一种或者它们的组合。
所述红外荧光粉为Cr 3+、Ce 3+、Yb 3+多掺杂的YAG近红外荧光粉其中的一种或者它们的组合，如Y 3Al 5O 12:Cr,Ce,Yb。
所述胶粘体为硅胶、环氧树脂、聚甲基丙烯酸甲醋(PMMA)、聚碳酸醋(PC)，或感光胶体中的一种或者多种组合。根据不同的需要，固晶过程和灌封过程采用相应的胶。
相比于现有技术，通过蓝光LED晶片和紫外LED晶片激发红色荧光粉和红外荧光粉，既能形成全光谱，又能突出光合作用光谱的光配方，在增加紫外LED晶片数量时，增加光谱中紫外光的成分，特别适用于药用植物的栽培，改变了现有技术中需要通过使用红色LED晶片、蓝色LED晶片、红外LED晶片、紫外LED晶片、绿色LED晶片等多种LED晶片组合才能实现的光配方，LED晶片投入成本和电路以及散热器成本大大降低(红色LED晶片、红外LED晶片、绿色LED晶片价格远远高于蓝光LED晶片，且发光效率很低)。
而且，本发明的植物补光用LED装置的光配方更加均匀，光源发光角度小；但是在现有技术中的植物补光LED中，红色LED晶片使用数量大，红外LED晶片、绿色LED晶片使用数量小，要实现均匀的光质分布难度很大。
本发明的植物补光用LED装置寿命更长，散热成本更低。蓝光LED晶片和紫外LED晶片激发红色荧光粉和红外荧光粉，无需使用红色LED晶片、红外LED晶片、绿色LED晶片，大大降低植物生长光源的功率，而且电路设计简单化(蓝光LED、红色LED晶片、红外LED晶片、绿色LED晶片工作压降不同所致电路复杂化，全用蓝光LED晶片激发红色荧光粉与黄色荧光粉、红外荧光粉就可实现所需光谱，电路设计简化)，电容使用量减少，电路成本低，寿命大大延长。
本发明的蓝光LED晶片和紫外LED晶片激发红色荧光粉和红外荧光粉的光源作为光配方照射生菜，结果发现：在同等光量子流密度辐照下，采用本发明的光源处理的生菜中，可溶性糖含量较采用红光LED光源和蓝光LED光源的补光下高出30％-50％，而且光源的成本 下降一半以上。
而且在同等光量子流密度辐照下，本发明在R/FR＝2.5处理下菊花花径及花梗长度比最大，植株生长更健壮、提高切花菊的观赏品质，有效控制花期提高花整齐度。
实施例7
本实施例提供了一种植物补光用LED装置，包括基板、LED晶片和第一胶粉层。
所述LED晶片是从包括以下项的组中选择的任一项：半导体发光二极管；有机发光二极管OLED；量子点发光二极管QLED和微发光二极管Micro-LED。
所述LED晶片设置于所述基板上，并且优选地，所述基板为PCB板，LED晶片安装于所述基板的一个表面上，所述基板的另一个表面上安装有散热装置，例如散热基座等部件，以将LED晶片工作时产生的热量向外散发，使得LED晶片保持较好的工作温度，LED晶片工作状态稳定，使用寿命长。
其中，所述LED晶片包括蓝光LED晶片和紫外LED晶片中的一种或者它们的组合，即所述LED晶片能生成400nm～480nm的蓝光以及发光峰320nm～400nm紫外光。
在所述LED晶片的上方覆盖有第一胶粉层；本实施例中，所述第一胶粉层将LED晶片固定于所述基板上，且其为胶粘体、红色荧光粉和红外荧光粉的混合物，其中，所述胶粘体、红色荧光粉和红外荧光粉的重量比为100:10-100:10-40，优选地可以设置为100:50:20，即通过红色荧光粉的加入，蓝光和紫外光激发红色荧光粉产生红光，并且通过红外荧光粉的加入，使得蓝光和紫外光激发红外荧光粉，产生红外光。
本实施例中，通过控制第一胶粉层的胶粘体、红色荧光粉和红外荧光粉的重量比，以及该第一胶粉层的厚度；使得红光(600nm～ 700nm)：蓝光(400nm～470nm)：红外光：绿光：紫外光的光子通量密度的比例(PPFD)为70～90：10～30：0.05～5:5-20：0.01～5之间。
优选地，所述第一胶粉层的厚度可以设置为0.1mm-0.5mm；所述第二胶粉层的厚度可以设置为0.1mm-0.9mm，以使得光子通量密度的比例在上述范围内。
蓝光LED晶片在400nm～480nm范围内具有发光峰，或者为在400nm～480nm的范围内拥有发光峰的多波长蓝光LED晶片组合；所述紫外LED晶片为波长在320nm～400nm的范围内拥有发光峰的LED晶片，或者紫外LED晶片为波长在320nm～400nm的范围内拥有发光峰的多波长紫光LED晶片组合。
所述黄色荧光粉为硅酸盐黄粉、铝酸盐黄粉，氮化物和氮氧化物荧光粉等黄色荧光粉中的一种或者组合。
所述红色荧光粉采用YAGG、YAGG:Ce 3+、YAG:Eu 2+、氮化物红色荧光粉、Mn 4+掺杂的K 2SiF 6和K 2SnF 6深红色荧光粉其中的一种或者它们的组合。
所述红外荧光粉为Cr 3+、Ce 3+、Yb 3+多掺杂的YAG近红外荧光粉其中的一种或者它们的组合，如Y 3Al 5O 12:Cr,Ce,Yb。
所述胶粘体为硅胶、环氧树脂、聚甲基丙烯酸甲醋(PMMA)、聚碳酸醋(PC)，或感光胶体中的一种或者多种组合。根据不同的需要，固晶过程和灌封过程采用相应的胶。
实施例8
本实施例提供了一种植物补光用LED装置，其与实施例6的不同之处在于，使用黄色荧光粉替换红外荧光粉，此时：
所述胶粘体和黄色荧光粉的重量比为100:10-40，并且优选地，所述胶粘体和黄色荧光粉的重量比为100:25。
也就是说，通过黄色荧光粉的设置，以及蓝光和紫外光激发黄色 荧光粉，能够产生绿光和红外光，其中，所述红外光的波长为700nm-760nm，最优的730nm，从而通过红外调整植物光形态。
本实施例中，通过控制第一胶粉层的胶粘体和红色荧光粉的重量比，以及该第一胶粉层的厚度；同时控制第二胶粉层的胶粘体和黄色荧光粉的重量比，以及该第二胶粉层的厚度，使得红光(600nm～700nm)：蓝光(400nm～470nm)：红外光：绿光：紫外光的光子通量密度的比例(PPFD)为70～90：10～30：0.05～5:5-20：0.01～5之间。
优选地，所述第一胶粉层的厚度可以设置为0.1mm-0.5mm；所述第二胶粉层的厚度可以设置为0.1mm-0.9mm，以使得光子通量密度的比例在上述范围内。
蓝光LED晶片在400nm～480nm范围内具有发光峰，或者为在400nm～480nm的范围内拥有发光峰的多波长蓝光LED晶片组合。
所述黄色荧光粉为硅酸盐黄粉、铝酸盐黄粉，氮化物和氮氧化物荧光粉等黄色荧光粉中的一种或者组合。
所述红色荧光粉采用YAGG、YAGG:Ce 3+、YAG:Eu 2+、氮化物红色荧光粉、Mn 4+掺杂的K 2SiF 6和K 2SnF 6深红色荧光粉其中的一种或者它们的组合。
所述胶粘体为硅胶、环氧树脂、聚甲基丙烯酸甲醋(PMMA)、聚碳酸醋(PC)，或感光胶体中的一种或者多种组合。根据不同的需要，固晶过程和灌封过程采用相应的胶。
实施例9
本实施例提供了一种植物补光用LED装置，其与实施例7的不同之处在于，使用黄色荧光粉替换红外荧光粉，此时：
所述胶粘体、红色荧光粉和黄色荧光粉的重量比为100:10-100:10-40，优选地可以设置为100:50:20，即通过黄色荧光粉的加入，蓝光和紫外光激发红色荧光粉产生红光，并且通过黄色荧 光粉的加入，使得蓝光和紫外光激发黄色荧光粉，产生绿光和红外光，其中，所述红外光的波长为700-760nm，最优的730nm。
本实施例中，通过控制第一胶粉层的胶粘体、红色荧光粉和红外荧光粉的重量比，以及该第一胶粉层的厚度；使得红光(600nm～700nm)：蓝光(400nm～470nm)：红外光：绿光：紫外光的光子通量密度的比例(PPFD)为70～90：10～30：0.05～5:5-20：0.01～5之间。
本实施例中，可以将上述第一胶粉层设置为0.2mm-1.4mm，以使得光子通量密度的比例在上述范围内。
蓝光LED晶片在400nm～480nm范围内具有发光峰，或者为在400nm～480nm的范围内拥有发光峰的多波长蓝光LED晶片组合。
所述黄色荧光粉为硅酸盐黄粉、铝酸盐黄粉，氮化物和氮氧化物荧光粉等黄色荧光粉中的一种或者组合。
所述红色荧光粉采用YAGG、YAGG:Ce 3+、YAG:Eu 2+、氮化物红色荧光粉、Mn 4+掺杂的K 2SiF 6和K 2SnF 6深红色荧光粉其中的一种或者它们的组合。
所述胶粘体为硅胶、环氧树脂、聚甲基丙烯酸甲醋(PMMA)、聚碳酸醋(PC)，或感光胶体中的一种或者多种组合。根据不同的需要，固晶过程和灌封过程采用相应的胶。
实施例10
本实施例提供一种灯具，其包括实施例6至9中的植物补光用LED装置。
而且，所述灯具还包括电连接器和LED驱动器；所述植物补光用LED装置可以串联连接，或者并联连接，或者串并联连接。
所述PCB板上设置有绝缘层和导电线路，导线电路上焊接有一个或多个所述植物补光用LED装置的LED晶片。
所述导电线路与LED驱动器输出连接；所述LED驱动器用于驱动 所述植物补光用LED装置。
所述PCB板为条形PCB板、矩形PCB板、环形PCB板或圆盘形PCB板，基板为氮化铝、铜基板、铜合金基板、氧化铝、环氧树脂模塑料、碳化硅、金刚石、硅、石墨铝基板、铝铁合金基板中、高导热塑料基板或铝包塑基板的一种。
实施例11
本实施例提供了一种倒装型植物补光用LED光源，包括基板、LED晶片、第一胶粉层和第二胶粉层。
所述LED晶片是从包括以下项的组中选择的任一项：半导体发光二极管；有机发光二极管OLED；量子点发光二极管QLED和微发光二极管Micro-LED。
所述LED晶片设置于所述基板上，并且优选地，所述基板为PCB板，LED晶片安装于所述基板的一个表面上，所述基板的另一个表面上安装有散热装置，例如散热基座等部件，以将LED晶片工作时产生的热量向外散发，使得LED晶片保持较好的工作温度，LED晶片工作状态稳定，使用寿命长。
其中，所述LED晶片可以为蓝光LED晶片，即所述LED晶片能生成400nm～480nm的蓝光。
在所述LED晶片和基板之间设置有第一胶粉层，在所述LED晶片的上方覆盖有第二胶粉层；本实施例中，所述第一胶粉层将LED晶片固定于所述基板上，且其为胶粘体和红色荧光粉的混合物。
所述第二胶粉层覆盖于所述LED晶片上，并完整包裹所述LED晶片；本实施例中，所述第二胶粉层为胶粘体和黄色荧光粉的混合物。
或者，所述第一胶粉层为胶粘体和黄色荧光粉的混合物，所述第二胶粉层为胶粘体和红色荧光粉的混合物。
其中，所述胶粘体和红色荧光粉的重量比为100:10-150，并且可以选择100:50，或者100：100作为优选方案。
所述红色荧光粉受到LED晶片所发出的蓝光的激发而发出发光峰落在波长红光605nm～680nm的范围内的红光。
其中，所述胶粘体和黄色荧光粉的重量比为100:10-30，并且优选地，所述胶粘体和黄色荧光粉的重量比为100:20。
也就是说，通过黄色荧光粉的设置，以及蓝光激发黄色荧光粉，能够产生500nm～560nm波长的绿光以及红外光，绿光可以调整视觉和光合作用，红外是调整植物光形态。
本实施例中，通过控制第一胶粉层的胶粘体和红色荧光粉的重量比，以及该第一胶粉层的厚度；同时控制第二胶粉层的胶粘体和黄色荧光粉的重量比，以及该第二胶粉层的厚度，使得红光(600nm～680nm):蓝光(420nm～480nm):红外光:绿光:紫外光的光子通量密度的比例(PPFD)为70～90:10～30:1～30:5-20:0.01～1。
优选地，所述第一胶粉层的厚度可以设置为0.1mm-0.5mm；所述第二胶粉层的厚度可以设置为0.1mm-0.9mm，以使得光子通量密度的比例在上述范围内。
蓝光LED晶片在400nm～480nm范围内具有发光峰，或者为在400nm～480nm的范围内拥有发光峰的多波长蓝光LED晶片组合。
所述黄色荧光粉为硅酸盐黄粉、铝酸盐黄粉，氮化物和氮氧化物荧光粉等黄色荧光粉中的一种或者组合。
所述红色荧光粉采用YAGG、YAGG:Ce 3+、YAG:Eu 2+、氮化物红色荧光粉、Mn 4+掺杂的K 2SiF 6和K 2SnF 6深红色荧光粉其中的一种或者它们的组合。
所述胶粘体为硅胶、环氧树脂、聚甲基丙烯酸甲醋(PMMA)、聚碳酸醋(PC)，或感光胶体中的一种或者多种组合。根据不同的需要，固晶过程和灌封过程采用相应的胶。
相比于现有技术，通过蓝光LED晶片激发红色荧光粉和黄色荧光粉组合，既能形成全光谱，又能突出植物光合作用特征的光配方，改变了现有技术中需要通过使用红色LED晶片、蓝色LED晶片、红外 LED晶片、紫外LED晶片、绿色LED晶片等多LED晶片组合才能实现的光配方，LED晶片投入成本和电路以及散热器成本大大降低(红色LED晶片、红外LED晶片、绿色LED晶片价格远远高于蓝光LED晶片，且发光效率很低)；
而且，本发明的倒装型植物补光用LED光源的光配方更加均匀，光源发光角度可控；但是现有技术中的植物补光LED中，红色LED晶片使用量大，红外LED晶片、绿色LED晶片使用量小，要实现均匀的光质分布难度很大。
本发明的倒装型植物补光用LED光源寿命更长，散热成本更低。蓝光LED晶片激发红色荧光粉和黄色荧光粉组合，无需使用红色LED晶片、红外LED晶片、绿色LED晶片，大大降低植物生长光源的功率，而且电路设计简单化(蓝光LED、红色LED晶片、红外LED晶片、绿色LED晶片工作压降不同所致电路复杂化，全用蓝光LED晶片激发红色荧光粉与黄色荧光粉、红外荧光粉就可实现所需光谱，电路设计简化)，电容使用量减少，电路成本低，寿命大大延长。
本发明的蓝光LED晶片激发红色荧光粉和黄色荧光粉的光源作为光配方照射生菜，结果发现：在同等光量子流密度辐照下，采用本发明的光源处理的生菜中，可溶性糖含量较采用红光LED光源和蓝光LED光源的补光下高出30％-50％，而且光源的成本下降一半以上。
而且在同等光量子流密度辐照下，本发明在R/FR＝2.5处理下菊花花径及花梗长度比最大，植株生长更健壮、提高切花菊的观赏品质，有效控制花期提高花整齐度。
实施例12
本实施例提供了一种倒装型植物补光用LED光源，其与实施例11的不同之处在于，使用红外荧光粉替换黄色荧光粉，此时：
所述胶粘体和红外荧光粉的重量比为100:10-30，并且优选地，所述胶粘体和红外荧光粉的重量比为100:25。
也就是说，通过红外荧光粉的设置，以及蓝光激发红外荧光粉，能够产生红外光，其中，所述红外光的波长为700nm-760nm，最优的730nm，从而通过红外调整植物光形态。
本实施例中，通过控制第一胶粉层的胶粘体和红色荧光粉的重量比，以及该第一胶粉层的厚度；同时控制第二胶粉层的胶粘体和红外荧光粉的重量比，以及该第二胶粉层的厚度，使得红光(600nm～680nm):蓝光(420nm～480nm):红外光:绿光:紫外光的光子通量密度的比例(PPFD)为70～90:10～30:1～30:5-20:0.01～1。
优选地，所述第一胶粉层的厚度可以设置为0.1mm-0.5mm；所述第二胶粉层的厚度可以设置为0.1mm-0.9mm，以使得光子通量密度的比例在上述范围内。
蓝光LED晶片在400nm～480nm范围内具有发光峰，或者为在400nm～480nm的范围内拥有发光峰的多波长蓝光LED晶片组合。
所述红色荧光粉采用YAGG、YAGG:Ce 3+、YAG:Eu 2+、氮化物红色荧光粉、Mn 4+掺杂的K 2SiF 6和K 2SnF 6深红色荧光粉其中的一种或者它们的组合。
所述红外荧光粉为Cr 3+、Ce 3+、Yb 3+多掺杂的YAG近红外荧光粉其中的一种或者它们的组合，如Y 3Al 5O 12:Cr,Ce,Yb。
所述胶粘体为硅胶、环氧树脂、聚甲基丙烯酸甲醋(PMMA)、聚碳酸醋(PC)，或感光胶体中的一种或者多种组合。根据不同的需要，固晶过程和灌封过程采用相应的胶。
实施例13
本实施例提供一种灯具，其包括实施例11至12中的倒装型植物补光用LED光源。
而且，所述灯具还包括电连接器和LED驱动器；所述倒装型植物补光用LED光源可以串联连接，或者并联连接，或者串并联连接。
所述PCB板上设置有绝缘层和导电线路，导线电路上焊接有一个 或多个所述倒装型植物补光用LED光源的LED晶片。
所述导电线路与LED驱动器输出连接；所述LED驱动器用于驱动所述倒装型植物补光用LED光源。
所述PCB板为条形PCB板、矩形PCB板或圆盘形PCB板，并可以采用氮化铝、铜基板、铜合金基板、氧化铝、环氧树脂模塑料、碳化硅、金刚石、硅、石墨铝基板、铝铁合金基板中、高导热塑料基板或铝包塑基板的一种制备。
实施例14
本实施例提供了一种倒装型植物补光用LED装置，包括基板、LED晶片、第一胶粉层和第二胶粉层。
所述LED晶片是从包括以下项的组中选择的任一项：半导体发光二极管；有机发光二极管OLED；量子点发光二极管QLED和微发光二极管Micro-LED。
所述LED晶片设置于所述基板上，并且优选地，所述基板为PCB板，LED晶片安装于所述基板的一个表面上，所述基板的另一个表面上安装有散热装置，例如散热基座等部件，以将LED晶片工作时产生的热量向外散发，使得LED晶片保持较好的工作温度，LED晶片工作状态稳定，使用寿命长。
其中，所述LED晶片包括蓝光LED晶片和紫外LED晶片中的一种或者它们的组合，即所述LED晶片能生成波长为400nm～480nm的蓝光以及波长为320nm～400nm近紫外光。
在所述LED晶片和基板之间设置有第一胶粉层，在所述LED晶片的上方覆盖有第二胶粉层；本实施例中，所述第一胶粉层将LED晶片固定于所述基板上，且其为胶粘体和红色荧光粉的混合物，其中，所述胶粘体和红色荧光粉的重量比为100:10-150，并且可以选择100:50作为优选方案。
所述红色荧光粉受到LED晶片所发出的蓝光和紫外光的激发而 发出发光峰落在波长605nm-680nm的范围内的红光。
所述第二胶粉层完整包裹所述LED晶片；本实施例中，所述第二胶粉层为胶粘体和红外荧光粉的混合物，其中，所述胶粘体和红外荧光粉的重量比为100:10-40，并且优选地，所述胶粘体和红外荧光粉的重量比为100:25。
也就是说，通过红外荧光粉的设置，以及蓝光和紫外光激发红外荧光粉，能够产生红外光，其中，所述红外光的波长为700nm-760nm，最优的730nm，以调整植物光形态。
本实施例中，通过控制第一胶粉层的胶粘体和红色荧光粉的重量比，以及该第一胶粉层的厚度；同时控制第二胶粉层的胶粘体和红外荧光粉的重量比，以及该第二胶粉层的厚度，使得红光(600nm～700nm)：蓝光(400nm～470nm)：红外光：绿光：紫外光的光子通量密度的比例(PPFD)为70～90：10～30：0.05～5:5-20：0.01～5之间。
优选地，所述第一胶粉层的厚度可以设置为0.1mm-0.5mm；所述第二胶粉层的厚度可以设计为0.1mm-0.9mm，以使得光子通量密度的比例在上述范围内。
蓝光LED晶片在400nm～480nm范围内具有发光峰，或者为在400nm～480nm的范围内拥有发光峰的多波长蓝光LED晶片组合。
所述黄色荧光粉为硅酸盐黄粉、铝酸盐黄粉，氮化物和氮氧化物荧光粉等黄色荧光粉中的一种或者组合。
所述红色荧光粉采用YAGG、YAGG:Ce 3+、YAG:Eu 2+、氮化物红色荧光粉、Mn 4+掺杂的K 2SiF 6和K 2SnF 6深红色荧光粉其中的一种或者它们的组合。
所述红外荧光粉为Cr 3+、Ce 3+、Yb 3+多掺杂的YAG近红外荧光粉其中的一种或者它们的组合，如Y 3Al 5O 12:Cr,Ce,Yb。
所述胶粘体为硅胶、环氧树脂、聚甲基丙烯酸甲醋(PMMA)、聚碳酸醋(PC)，或感光胶体中的一种或者多种组合。根据不同的需要， 固晶过程和灌封过程采用相应的胶。
相比于现有技术，通过蓝光LED晶片和紫外LED晶片激发红色荧光粉和红外荧光粉，既能形成全光谱，又能突出光合作用光谱的光配方，在增加紫外LED晶片数量时，增加光谱中紫外光的成分，特别适用于药用植物的栽培，改变了现有技术中需要通过使用红色LED晶片、蓝色LED晶片、红外LED晶片、紫外LED晶片、绿色LED晶片等多LED晶片组合才能实现的光配方，LED晶片投入成本和电路以及散热器成本大大降低(红色LED晶片、红外LED晶片、绿色LED晶片价格远远高于蓝光LED晶片，且发光效率很低)。
而且，本发明的倒装型植物补光用LED装置的光配方更加均匀，光源发光角度小；但是在现有技术中的植物补光LED中，红色LED晶片使用数量大，红外LED晶片、绿色LED晶片使用数量小，要实现均匀的光质分布难度很大。
本发明的倒装型植物补光用LED装置寿命更长，散热成本更低。蓝光LED晶片和紫外LED晶片激发红色荧光粉和红外荧光粉，无需使用红色LED晶片、红外LED晶片、绿色LED晶片，大大降低植物生长光源的功率，而且电路设计简单化(蓝光LED、红色LED晶片、红外LED晶片、绿色LED晶片工作压降不同所致电路复杂化，全用蓝光LED晶片激发红色荧光粉与黄色荧光粉、红外荧光粉就可实现所需光谱，电路设计简化)，电容使用量减少，电路成本低，寿命大大延长。
本发明的蓝光LED晶片和紫外LED晶片激发红色荧光粉和红外荧光粉的光源作为光配方照射生菜，结果发现：在同等光量子流密度辐照下，采用本发明的光源处理的生菜中，可溶性糖含量较采用红光LED光源和蓝光LED光源的补光下高出30％-50％，而且光源的成本下降一半以上。
而且在同等光量子流密度辐照下，本发明在R/FR＝2.5处理下菊花花径及花梗长度比最大，植株生长更健壮、提高切花菊的观赏品质，有效控制花期提高花整齐度。
实施例15
本实施例提供了一种倒装型植物补光用LED装置，其与实施例14的不同之处在于，使用黄色荧光粉替换红外荧光粉，此时：
所述胶粘体和黄色荧光粉的重量比为100:10-40，并且优选地，所述胶粘体和黄色荧光粉的重量比为100:25。
也就是说，通过黄色荧光粉的设置，以及蓝光和紫外光激发黄色荧光粉，能够产生绿光和红外光，其中，所述红外光的波长为700nm-760nm，最优的730nm，从而通过红外调整植物光形态。
本实施例中，通过控制第一胶粉层的胶粘体和红色荧光粉的重量比，以及该第一胶粉层的厚度；同时控制第二胶粉层的胶粘体和黄色荧光粉的重量比，以及该第二胶粉层的厚度，使得红光(600nm～700nm)：蓝光(400nm～470nm)：红外光：绿光：紫外光的光子通量密度的比例(PPFD)为70～90：10～30：0.05～5:5-20：0.01～5之间。
优选地，所述第一胶粉层的厚度可以设置为0.1mm-0.5mm；所述第二胶粉层的厚度可以设计为0.1mm-0.9mm，以使得光子通量密度的比例在上述范围内。
蓝光LED晶片在400nm～480nm范围内具有发光峰，或者为在400nm～480nm的范围内拥有发光峰的多波长蓝光LED晶片组合。
所述黄色荧光粉为硅酸盐黄粉、铝酸盐黄粉，氮化物和氮氧化物荧光粉等黄色荧光粉中的一种或者组合。
所述红色荧光粉采用YAGG、YAGG:Ce 3+、YAG:Eu 2+、氮化物红色荧光粉、Mn 4+掺杂的K 2SiF 6和K 2SnF 6深红色荧光粉其中的一种或者它们的组合。
所述胶粘体为硅胶、环氧树脂、聚甲基丙烯酸甲醋(PMMA)、聚碳酸醋(PC)，或感光胶体中的一种或者多种组合。根据不同的需要，固晶过程和灌封过程采用相应的胶。
实施例16
本实施例提供一种灯具，其包括实施例14至15中的倒装型植物补光用LED装置。
而且，所述灯具还包括电连接器和LED驱动器；所述倒装型植物补光用LED装置可以串联连接，或者并联连接，或者串并联连接。
所述PCB板上设置有绝缘层和导电线路，导线电路上焊接有一个或多个所述倒装型植物补光用LED装置的LED晶片。
所述导电电路与LED驱动器输出连接；所述LED驱动器用于驱动所述倒装型植物补光用LED装置。
所述PCB板为条形PCB板、矩形PCB板或圆盘形PCB板，并可以采用氮化铝、铜基板、铜合金基板、氧化铝、环氧树脂模塑料、碳化硅、金刚石、硅、石墨铝基板、铝铁合金基板中、高导热塑料基板或铝包塑基板的一种材质制备。

Claims (29)

  1. 一种植物补光用LED光源，其特征在于，包括基板、LED晶片、第一胶粉层和第二胶粉层；
    LED晶片安装于所述基板的一个表面上；其中，所述LED晶片为蓝光LED晶片；
    在所述LED晶片的上方覆盖有第一胶粉层和第二胶粉层；
    所述第一胶粉层将LED晶片固定于所述基板上，且其为胶粘体和红色荧光粉的混合物；
    所述第二胶粉层覆盖于所述第一胶粉层上，并完整包裹所述第一胶粉层；所述第二胶粉层为胶粘体和黄色荧光粉的混合物；或者第二胶粉层为胶粘体和红外荧光粉的混合物。
  2. 根据权利要求1所述的植物补光用LED光源，其特征在于，在第一胶粉层中，所述胶粘体和红色荧光粉的重量比为100:10-150。
  3. 根据权利要求2所述的植物补光用LED光源，其特征在于，在第二胶粉层中，所述胶粘体和黄色荧光粉的重量比为100:10-30。
  4. 根据权利要求2所述的植物补光用LED光源，其特征在于，在第二胶粉层中，所述胶粘体和红外荧光粉的重量比为100:10-40。
  5. 一种植物补光用LED光源，其特征在于，包括基板、LED晶片和第一胶粉层；
    LED晶片安装于所述基板的一个表面上；其中，所述LED晶片为蓝光LED晶片；
    在所述LED晶片的上方覆盖有第一胶粉层；
    所述第一胶粉层将LED晶片固定于所述基板上，且其为胶粘体、红色荧光粉和黄色荧光粉的混合物；或者所述第一胶粉层为胶粘体、红色荧光粉和红外荧光粉的混合物。
  6. 根据权利要求5所述的植物补光用LED光源，其特征在于，所述胶粘体、红色荧光粉和黄色荧光粉的重量比为100:10-100:10-30。
  7. 根据权利要求6所述的植物补光用LED光源，其特征在于，所 述胶粘体、红色荧光粉和红外荧光粉的重量比为100:10-100:10-40。
  8. 根据权利要求1或5所述的植物补光用LED光源，其特征在于，所述蓝光LED晶片为在400nm～480nm范围内具有发光峰的LED晶片，或者蓝光LED晶片为在400～480nm的范围内拥有发光峰的多波长蓝光LED晶片组合。
  9. 一种植物补光用LED装置，其特征在于，包括基板、LED晶片、第一胶粉层和第二胶粉层；
    LED晶片安装于所述基板的一个表面上；其中，所述LED晶片包括蓝光LED晶片和紫外LED晶片中的一种或者它们的组合；
    在所述LED晶片的上方覆盖有第一胶粉层和第二胶粉层；
    所述第一胶粉层将LED晶片固定于所述基板上，且其为胶粘体和红色荧光粉的混合物；
    所述第二胶粉层覆盖于所述第一胶粉层上，并完整包裹所述第一胶粉层；所述第二胶粉层为胶粘体和红外荧光粉的混合物；或者第二胶粉层为胶粘体和黄色荧光粉的混合物。
  10. 根据权利要求9所述的植物补光用LED装置，其特征在于，在所述第一胶粉层中，所述胶粘体和红色荧光粉的重量比为100:10-150。
  11. 根据权利要求10所述的植物补光用LED装置，其特征在于，在所述第二胶粉层中，所述胶粘体和红外荧光粉的重量比为100:10-40。
  12. 根据权利要求10所述的植物补光用LED装置，其特征在于，在所述第二胶粉层中，所述胶粘体和黄色荧光粉的重量比为100:10-40。
  13. 一种植物补光用LED装置，其特征在于，包括基板、LED晶片和第一胶粉层；
    LED晶片安装于所述基板的一个表面上；其中，所述LED晶片包括蓝光LED晶片和紫外LED晶片中的一种或者它们的组合；
    在所述LED晶片的上方覆盖有第一胶粉层；
    所述第一胶粉层将LED晶片固定于所述基板上，且其为胶粘体、红色荧光粉和黄色荧光粉的混合物；或者所述第一胶粉层为胶粘体、红色荧光粉和红外荧光粉的混合物。
  14. 根据权利要求13所述的植物补光用LED装置，其特征在于，所述胶粘体、红色荧光粉和红外荧光粉的重量比为100:10-100:10-40。
  15. 根据权利要求13所述的植物补光用LED装置，其特征在于，所述胶粘体、红色荧光粉和黄色荧光粉的重量比为100:10-100:10-40。
  16. 根据权利要求9或13所述的植物补光用LED装置，其特征在于，所述蓝光LED晶片为在400nm～480nm范围内具有发光峰的LED晶片，或者蓝光LED晶片为在400nm～480nm的范围内拥有发光峰的多波长蓝光LED晶片组合；所述紫外LED晶片为波长在320nm～400nm的范围内拥有发光峰的LED晶片，或者紫外LED晶片为波长在320nm～400nm的范围内拥有发光峰的多波长紫光LED晶片组合。
  17. 一种倒装型植物补光用LED光源，其特征在于，包括基板、LED晶片、第一胶粉层和第二胶粉层；
    LED晶片安装于所述基板的一个表面上；其中，所述LED晶片为蓝光LED晶片；
    在所述LED晶片和基板之间设置有第一胶粉层，在所述LED晶片的上方覆盖有第二胶粉层；
    所述第一胶粉层将LED晶片固定于所述基板上，且其为胶粘体和红色荧光粉的混合物；
    所述第二胶粉层覆盖于所述LED晶片上，并完整包裹所述LED晶片；所述第二胶粉层为胶粘体和黄色荧光粉的混合物；或者第二胶粉层为胶粘体和红外荧光粉的混合物。
  18. 一种倒装型植物补光用LED光源，其特征在于，包括基板、LED晶片、第一胶粉层和第二胶粉层；
    LED晶片安装于所述基板的一个表面上；其中，所述LED晶片为 蓝光LED晶片；
    在所述LED晶片和基板之间设置有第一胶粉层，在所述LED晶片的上方覆盖有第二胶粉层；
    所述第一胶粉层将LED晶片固定于所述基板上，且所述第一胶粉层为胶粘体和黄色荧光粉的混合物；或者第一胶粉层为胶粘体和红外荧光粉的混合物；
    所述第二胶粉层覆盖于所述LED晶片上，并完整包裹所述LED晶片；所述第二胶粉层为胶粘体和红色荧光粉的混合物。
  19. 根据权利要求17或18所述的倒装型植物补光用LED光源，其特征在于，在第一胶粉层或者第二胶粉层中，所述胶粘体和红色荧光粉的重量比为100:10-150。
  20. 根据权利要求19所述的倒装型植物补光用LED光源，其特征在于，在第一胶粉层或者第二胶粉层中，所述胶粘体和黄色荧光粉的重量比为100:10-30。
  21. 根据权利要求19所述的倒装型植物补光用LED光源，其特征在于，在第一胶粉层或者第二胶粉层中，所述胶粘体和红外荧光粉的重量比为100:10-40。
  22. 根据权利要求17所述的倒装型植物补光用LED光源，其特征在于，所述蓝光LED晶片为在400nm～480nm范围内具有发光峰的LED晶片，或者蓝光LED晶片为在400nm～480nm的范围内拥有发光峰的多波长蓝光LED晶片组合。
  23. 一种倒装型植物补光用LED装置，其特征在于，包括基板、LED晶片、第一胶粉层和第二胶粉层；
    LED晶片安装于所述基板的一个表面上；其中，所述LED晶片包括蓝光LED晶片和紫外LED晶片中的一种或者它们的组合；
    在所述LED晶片和基板之间设置有第一胶粉层，在所述LED晶片的上方覆盖有第二胶粉层；
    所述第一胶粉层将LED晶片固定于所述基板上，且其为胶粘体和 红色荧光粉的混合物；
    所述第二胶粉层覆盖于所述LED晶片上，并完整包裹所述LED晶片；所述第二胶粉层为胶粘体和红外荧光粉的混合物；或者第二胶粉层为胶粘体和黄色荧光粉的混合物。
  24. 一种倒装型植物补光用LED装置，其特征在于，包括基板、LED晶片、第一胶粉层和第二胶粉层；
    LED晶片安装于所述基板的一个表面上；其中，所述LED晶片包括蓝光LED晶片和紫外LED晶片中的一种或者它们的组合；
    在所述LED晶片和基板之间设置有第一胶粉层，在所述LED晶片的上方覆盖有第二胶粉层；
    所述第一胶粉层将LED晶片固定于所述基板上，且所述第一胶粉层为胶粘体和红外荧光粉的混合物；或者第一胶粉层为胶粘体和黄色荧光粉的混合物；
    所述第二胶粉层覆盖于所述LED晶片上，并完整包裹所述LED晶片；所述第二胶粉层为胶粘体和红色荧光粉的混合物。
  25. 根据权利要求23或24所述的倒装型植物补光用LED装置，其特征在于，在第一胶粉层或第二胶粉层中，所述胶粘体和红色荧光粉的重量比为100:10-150。
  26. 根据权利要求25所述的倒装型植物补光用LED装置，其特征在于，在第一胶粉层或第二胶粉层中，所述胶粘体和红外荧光粉的重量比为100:10-40。
  27. 根据权利要求25所述的倒装型植物补光用LED装置，其特征在于，在第一胶粉层或第二胶粉层中，所述胶粘体和黄色荧光粉的重量比为100:10-40。
  28. 根据权利要求23所述的倒装型植物补光用LED装置，其特征在于，所述蓝光LED晶片为在400nm～480nm范围内具有发光峰的LED晶片，或者蓝光LED晶片为在400nm～480nm的范围内拥有发光峰的多波长蓝光LED晶片组合；所述紫外LED晶片为波长在320nm～400nm 的范围内拥有发光峰的LED晶片。
  29. 一种灯具，其特征在于，包括权利要求1-28之一所述的植物补光用LED光源。
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