WO2020115112A3 - Procédé de formation de nanostructures sur une surface et système d'inspection de tranches - Google Patents

Procédé de formation de nanostructures sur une surface et système d'inspection de tranches Download PDF

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Publication number
WO2020115112A3
WO2020115112A3 PCT/EP2019/083632 EP2019083632W WO2020115112A3 WO 2020115112 A3 WO2020115112 A3 WO 2020115112A3 EP 2019083632 W EP2019083632 W EP 2019083632W WO 2020115112 A3 WO2020115112 A3 WO 2020115112A3
Authority
WO
WIPO (PCT)
Prior art keywords
water
inspection system
wafer inspection
optics
terminated
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/EP2019/083632
Other languages
German (de)
English (en)
Other versions
WO2020115112A2 (fr
Inventor
Alexandra Pazidis
Martin Noah
Felix Lange
Florian Schapper
Claus Zahlten
Marcel Härtling
Aleksey Sidorenko
Salomé Vargas Ruiz
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Carl Zeiss SMT GmbH
Original Assignee
Carl Zeiss SMT GmbH
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Carl Zeiss SMT GmbH filed Critical Carl Zeiss SMT GmbH
Priority to KR1020217016878A priority Critical patent/KR102892503B1/ko
Priority to CN201980090032.6A priority patent/CN113366346B/zh
Publication of WO2020115112A2 publication Critical patent/WO2020115112A2/fr
Publication of WO2020115112A3 publication Critical patent/WO2020115112A3/fr
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

Links

Classifications

    • GPHYSICS
    • G01MEASURING; TESTING
    • G01NINVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84Systems specially adapted for particular applications
    • G01N21/88Investigating the presence of flaws or contamination
    • G01N21/95Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
    • G01N21/9501Semiconductor wafers
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01NINVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84Systems specially adapted for particular applications
    • G01N21/88Investigating the presence of flaws or contamination
    • G01N21/8806Specially adapted optical and illumination features
    • GPHYSICS
    • G02OPTICS
    • G02BOPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B1/00Optical elements characterised by the material of which they are made; Optical coatings for optical elements
    • G02B1/10Optical coatings produced by application to, or surface treatment of, optical elements
    • G02B1/11Anti-reflection coatings
    • G02B1/118Anti-reflection coatings having sub-optical wavelength surface structures designed to provide an enhanced transmittance, e.g. moth-eye structures
    • GPHYSICS
    • G02OPTICS
    • G02BOPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B1/00Optical elements characterised by the material of which they are made; Optical coatings for optical elements
    • G02B1/10Optical coatings produced by application to, or surface treatment of, optical elements
    • G02B1/14Protective coatings, e.g. hard coatings
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P74/00Testing or measuring during manufacture or treatment of wafers, substrates or devices
    • H10P74/20Testing or measuring during manufacture or treatment of wafers, substrates or devices characterised by the properties tested or measured, e.g. structural or electrical properties
    • H10P74/203Structural properties, e.g. testing or measuring thicknesses, line widths, warpage, bond strengths or physical defects

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Health & Medical Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Biochemistry (AREA)
  • General Health & Medical Sciences (AREA)
  • Immunology (AREA)
  • Pathology (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
  • Investigating Materials By The Use Of Optical Means Adapted For Particular Applications (AREA)

Abstract

L'invention concerne un procédé de formation de nanostructures (5) sur une surface dégagée (3) d'un substrat (1) cristallin, en particulier ionique, pour assurer la transmission de rayonnements se situant dans la plage de longueurs d'ondes de l'ordre de l'ultraviolet lointain/de l'ultraviolet du vide, ledit procédé comprenant : disposer d'une surface dégagée (3) du substrat (1), qui n'est pas orientée le long d'un plan réticulaire à énergie de surface minimale, et injecter un apport d'énergie (E) dans la surface dégagée (3) de manière à réarranger la surface dégagée (3) de sorte à former les nanostructures (5), l'apport d'énergie (E ) étant produit par exposition de la surface dégagée (3) à un rayonnement électromagnétique (4). L'invention concerne également un élément optique qui présente une surface (3) sur laquelle sont formées des nanostructures (5), ainsi qu'un système d'inspection de tranches.
PCT/EP2019/083632 2018-12-07 2019-12-04 Procédé de formation de nanostructures sur une surface et système d'inspection de tranches Ceased WO2020115112A2 (fr)

Priority Applications (2)

Application Number Priority Date Filing Date Title
KR1020217016878A KR102892503B1 (ko) 2018-12-07 2019-12-04 표면에 나노구조물을 형성하는 방법 및 웨이퍼 검사 시스템
CN201980090032.6A CN113366346B (zh) 2018-12-07 2019-12-04 具有晶片封端光学件的晶片检查系统

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE102018221190.6A DE102018221190A1 (de) 2018-12-07 2018-12-07 Verfahren zum Bilden von Nanostrukturen an einer Oberfläche und Wafer-Inspektionssystem
DE102018221190.6 2018-12-07

Publications (2)

Publication Number Publication Date
WO2020115112A2 WO2020115112A2 (fr) 2020-06-11
WO2020115112A3 true WO2020115112A3 (fr) 2020-08-13

Family

ID=68835195

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/EP2019/083632 Ceased WO2020115112A2 (fr) 2018-12-07 2019-12-04 Procédé de formation de nanostructures sur une surface et système d'inspection de tranches

Country Status (4)

Country Link
KR (1) KR102892503B1 (fr)
CN (1) CN113366346B (fr)
DE (1) DE102018221190A1 (fr)
WO (1) WO2020115112A2 (fr)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US12510692B2 (en) 2020-08-27 2025-12-30 Kla Corporation Protection of optical materials of optical components from radiation degradation
DE102021202848A1 (de) 2021-03-24 2022-09-29 Carl Zeiss Smt Gmbh Optische Anordnung für den FUV/VUV-Wellenlängenbereich
DE102021203505A1 (de) 2021-04-09 2022-10-13 Carl Zeiss Smt Gmbh Verfahren und Vorrichtung zum Abscheiden mindestens einer Schicht, optisches Element und optische Anordnung
DE102022210037A1 (de) * 2022-09-23 2024-03-28 Carl Zeiss Smt Gmbh Anordnung zum Tempern mindestens eines Teilbereichs eines optischen Elementes
DE102022210514A1 (de) 2022-10-05 2024-04-11 Carl Zeiss Smt Gmbh Verfahren und Vorrichtung zur Herstellung einer fluoridischen Schutzbeschichtung für ein reflektives optisches Element
DE102022210513A1 (de) 2022-10-05 2024-04-11 Carl Zeiss Smt Gmbh Verfahren zum Bilden einer Fluorid- oder Oxyfluoridschicht
DE102022210512A1 (de) 2022-10-05 2024-04-11 Carl Zeiss Smt Gmbh Verfahren und Vorrichtung zur Nachbehandlung einer Fluoridschicht für ein optisches Element für den VUV-Wellenlängenbereich

Citations (2)

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Publication number Priority date Publication date Assignee Title
JP2001235430A (ja) * 2000-02-25 2001-08-31 Nikon Corp 光学式検査装置および光学式表面検査装置
US20050006590A1 (en) * 2003-01-16 2005-01-13 Harrison Dale A. Broad band referencing reflectometer

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0921557A3 (fr) * 1997-09-30 2004-03-17 Siemens Aktiengesellschaft Formation de couche non homogène par utilisation d'un rideau protecteur de gas inerte
US6421127B1 (en) * 1999-07-19 2002-07-16 American Air Liquide, Inc. Method and system for preventing deposition on an optical component in a spectroscopic sensor
JP2002158267A (ja) * 2000-11-21 2002-05-31 Sanken Electric Co Ltd 半導体ウエハの検査法及び検査装置
KR20030076238A (ko) * 2001-04-17 2003-09-26 코닌클리즈케 필립스 일렉트로닉스 엔.브이. 극자외선 투과 계면 구조체 및 극자외선 리소그래피 투사장치
CN1536101A (zh) * 2003-04-08 2004-10-13 微视科技股份有限公司 晶圆的电镀设备
DE102006044591A1 (de) * 2006-09-19 2008-04-03 Carl Zeiss Smt Ag Optische Anordnung, insbesondere Projektionsbelichtungsanlage für die EUV-Lithographie, sowie reflektives optisches Element mit verminderter Kontamination
WO2008074503A1 (fr) * 2006-12-21 2008-06-26 Carl Zeiss Smt Ag Élément optique d'émission
DE102008002193A1 (de) * 2007-08-29 2009-03-05 Carl Zeiss Smt Ag Optisches Element mit hydrophober Oberfläche und Projektionsbelichtungsanlage für die Immersionslithographie damit
JP5474891B2 (ja) 2011-08-12 2014-04-16 ギガフォトン株式会社 光源装置及びそれを用いた露光装置
DE102013102670A1 (de) * 2013-03-15 2014-10-02 Asml Netherlands B.V. Optisches Element und optisches System für die EUV-Lithographie sowie Verfahren zur Behandlung eines solchen optischen Elements
KR20150033416A (ko) * 2013-09-24 2015-04-01 삼성전기주식회사 집속 이온 빔 장치 및 샘플 제조방법
DE102014216118A1 (de) * 2014-08-13 2016-02-18 Carl Zeiss Smt Gmbh Vakuum-System, insbesondere EUV-Lithographiesystem, und optisches Element

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001235430A (ja) * 2000-02-25 2001-08-31 Nikon Corp 光学式検査装置および光学式表面検査装置
US20050006590A1 (en) * 2003-01-16 2005-01-13 Harrison Dale A. Broad band referencing reflectometer

Non-Patent Citations (3)

* Cited by examiner, † Cited by third party
Title
HIRSCH E H ET AL: "Stress in porous thin films through absorption of polar molecules (and relevance to optical coatings)", JOURNAL OF PHYSICS D: APPLIED PHYSICS, INSTITUTE OF PHYSICS PUBLISHING LTD, GB, vol. 13, no. 11, 14 November 1980 (1980-11-14), pages 2081 - 2094, XP020011525, ISSN: 0022-3727, DOI: 10.1088/0022-3727/13/11/018 *
KANAKI ET AL.: "Theoretical study on the morpgology of MgF2 nanocrystals at finite temperature and pressure", SURFACE SCIENCE, vol. 632, 2015, pages 158 - 163, XP002797926 *
REITEROV ET AL.: "Influence of adsorbed films on the change in spectral transmission of fluoride crystal windows in the vacuum ultraviolet", SOVIET JOURNAL OF OPTICAL TECHNOLOGY, vol. 47, no. 5, 1980, pages 284 - 287, XP009519078 *

Also Published As

Publication number Publication date
CN113366346A (zh) 2021-09-07
KR20210097130A (ko) 2021-08-06
WO2020115112A2 (fr) 2020-06-11
DE102018221190A1 (de) 2020-06-10
CN113366346B (zh) 2023-06-20
KR102892503B1 (ko) 2025-12-01

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