WO2020139955A1 - Annular capacitor rf, microwave and mm wave systems - Google Patents

Annular capacitor rf, microwave and mm wave systems Download PDF

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Publication number
WO2020139955A1
WO2020139955A1 PCT/US2019/068590 US2019068590W WO2020139955A1 WO 2020139955 A1 WO2020139955 A1 WO 2020139955A1 US 2019068590 W US2019068590 W US 2019068590W WO 2020139955 A1 WO2020139955 A1 WO 2020139955A1
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WIPO (PCT)
Prior art keywords
substrate
metal
depositing
trench
annular shape
Prior art date
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PCT/US2019/068590
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French (fr)
Inventor
Jeb H. Flemming
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3D Glass Solutions
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3D Glass Solutions
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Publication date
Application filed by 3D Glass Solutions filed Critical 3D Glass Solutions
Priority to CA3107812A priority Critical patent/CA3107812C/en
Priority to AU2019416327A priority patent/AU2019416327B2/en
Priority to EP19905255.6A priority patent/EP3903339A4/en
Priority to KR1020217014441A priority patent/KR102392858B1/en
Priority to JP2021503065A priority patent/JP7257707B2/en
Priority to US17/259,887 priority patent/US11270843B2/en
Publication of WO2020139955A1 publication Critical patent/WO2020139955A1/en
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
    • H01G4/00—Fixed capacitors; Processes of their manufacture
    • H01G4/002—Details
    • H01G4/005—Electrodes
    • H01G4/012—Form of non-self-supporting electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D1/00—Resistors, capacitors or inductors
    • H10D1/60—Capacitors
    • H10D1/68—Capacitors having no potential barriers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/20—Interconnections within wafers or substrates, e.g. through-silicon vias [TSV]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
    • H01G4/00—Fixed capacitors; Processes of their manufacture
    • H01G4/002—Details
    • H01G4/018—Dielectrics
    • H01G4/06—Solid dielectrics
    • H01G4/08—Inorganic dielectrics
    • H01G4/12—Ceramic dielectrics
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
    • H01G4/00—Fixed capacitors; Processes of their manufacture
    • H01G4/002—Details
    • H01G4/228—Terminals
    • H01G4/248—Terminals the terminals embracing or surrounding the capacitive element, e.g. caps
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
    • H01G4/00—Fixed capacitors; Processes of their manufacture
    • H01G4/33—Thin- or thick-film capacitors (thin- or thick-film circuits; capacitors without a potential-jump or surface barrier specially adapted for integrated circuits, details thereof, multistep manufacturing processes therefor)
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
    • H01G4/00—Fixed capacitors; Processes of their manufacture
    • H01G4/40—Structural combinations of fixed capacitors with other electric elements, the structure mainly consisting of a capacitor, e.g. RC combinations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/40—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes
    • H10W20/495—Capacitive arrangements or effects of, or between wiring layers
    • H10W20/496—Capacitor integral with wiring layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W70/00—Package substrates; Interposers; Redistribution layers [RDL]
    • H10W70/60—Insulating or insulated package substrates; Interposers; Redistribution layers
    • H10W70/62—Insulating or insulated package substrates; Interposers; Redistribution layers characterised by their interconnections
    • H10W70/63—Vias, e.g. via plugs
    • H10W70/635—Through-vias
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W70/00—Package substrates; Interposers; Redistribution layers [RDL]
    • H10W70/60—Insulating or insulated package substrates; Interposers; Redistribution layers
    • H10W70/67—Insulating or insulated package substrates; Interposers; Redistribution layers characterised by their insulating layers or insulating parts
    • H10W70/68—Shapes or dispositions thereof
    • H10W70/685—Shapes or dispositions thereof comprising multiple insulating layers

Definitions

  • the present invention relates in general to the field of creating a planar surface between via(s) and other structures and the substrate used for RF microwave and millimeter wave applications reducing device/system size and lowering parasitic noise and signals.
  • Planarizing generally uses a form of chemical mechanical polishing (CMP) of the substrate and structure on/in the substrate to bring the surface to be flat and parallel.
  • CMP chemical mechanical polishing
  • the challenge is that the substrates are quite hard relative to the other material on or in the substrate.
  • boron silicate quartz and silicon have a hardness between 6 to 7 Mohs while typical metals (copper, gold and silver) used in high frequency application have a hardness of 2.5 to 3 Mohs.
  • This hardness differential creates a fundamental problem when using CMP to planarize the surface.
  • the softer metal structures are removed at a higher rate than the harder substrate. This creates a lower surface in the metal structure relative to the surface of the harder substrate.
  • the transition from substrate to metal structure can be as great as 0.5 pm. In general, the magnitude of the depth of this transition is not uniform across a wafer. This transition or step creates a random thinning of structures/devices that are made on top of, or that cross the substrate metal transition.
  • Variations in the thickness results in random capacitors across the die/substrate, creating random capacitance and filters RF, millimeter, and microwave circuits making the circuit/device. Placing a filter, capacitor, other passive device or/or active device adjacent and greater than 250 pm from the via induces parasitic inductance from the metal trace between the passive device and the via/imbedded metal structure.
  • the passive device can be placed in conjunction with active devices and can be combined to make a wide array of RF systems and subsystems including: antennas with gain, RF Circulators, RF Isolators, RF Combiners, RF Couplers, RF Splitters, Transformers, Switches, Multiplexors, Duplexers, and/or Diplexers that are connected by via as well as metal lines and via to each other and ground planes.
  • FIG. 1 shows a schematic of an annular RF shunt capacitor.
  • FIG. 2 shows a schematic of an annular RF shunt capacitor with dimensional information between the adjacent annular element and the via.
  • FIG. 3 shows a schematic of a cross section for annular RF shunt capacitor.
  • FIGS. 4A to 4F show a step-by-step method of making the device of the present invention.
  • FIGS. 4A and 4B show cross-sectional side views of two of the steps of the method.
  • FIGS. 4C to 4F show the remained of the steps for making the annular capacitor RF, microwave and millimeter (MM) wave systems of the present invention.
  • MM millimeter
  • the present invention includes a method for creating a substrate, an annular capacitor structure where the adjacent edge of the capacitive structure less than 250 pm of the via or imbedded metal structure in the substrate eliminates or minimizes the inductance associated with the metal line.
  • FIG. 1 shows an example of the device 10, that includes ports 12 and 14 that connect to a top metal 16, which can be a copper layer that connected to, or shunted, to a through-via hole 18.
  • the design of the present invention reduces the variability from the capacitor build. In this design, the through-via hole is formed but does not affect the capacitor, thus eliminating that variable from design consideration(s).
  • a top insulator 20 is positioned between the top metal 16 at the via 18, and a second metal layer 22 is deposited on the insulator 20. The structure is formed in a substrate 24.
  • FIG. 2 shows an internal view of the device 10, that shows the gap 26, between the through-hole via 18 and the first metal layer 16. Ports 12 and 14 that connect to a top metal 16, which can be a copper layer that connected to, or shunted, to a through-via hole 18.
  • FIG. 3 is a cross-section side view of the device 10. Ports 12 and 14 are shown in this configuration as being on opposite sides of the through-hole via 18, which is isolated from the top metal layer 16 and the second top metal layer 22, by insulator 20. A bottom metal ground plane 28 is depicted connected to through-hole via 18.
  • Table 1 and FIGS. 4A to 4F show a step-by-step method of making the device 10 of the present invention. The process flow to create a planarized surface in a substrate with dissimilar materials to eliminate vertical transitions from a substrate to an added material is as follows:
  • the words“comprising” (and any form of comprising, such as“comprise” and“comprises”),“having” (and any form of having, such as “have” and“has”),“including” (and any form of including, such as“includes” and“include”) or“containing” (and any form of containing, such as“contains” and“contain”) are inclusive or open-ended and do not exclude additional, unrecited elements or method steps.
  • “comprising” may be replaced with“consisting essentially of’ or“consisting of’.
  • the phrase “consisting essentially of’ requires the specified integer(s) or steps as well as those that do not materially affect the character or function of the claimed invention.
  • the term “consisting” is used to indicate the presence of the recited integer (e.g., a feature, an element, a characteristic, a property, a method/process step or a limitation) or group of integers (e.g., feature(s), element(s), characteristic(s), property(ies), method/process steps or limitation(s)) only.
  • words of approximation such as, without limitation, “about”, “substantial” or “substantially” refers to a condition that when so modified is understood to not necessarily be absolute or perfect but would be considered close enough to those of ordinary skill in the art to warrant designating the condition as being present.
  • the extent to which the description may vary will depend on how great a change can be instituted and still have one of ordinary skilled in the art recognize the modified feature as still having the required characteristics and capabilities of the unmodified feature.
  • a numerical value herein that is modified by a word of approximation such as“about” may vary from the stated value by at least ⁇ 1, 2, 3, 4, 5, 6, 7, 10, 12 or 15%.
  • compositions and/or methods disclosed and claimed herein can be made and executed without undue experimentation in light of the present disclosure. While the compositions and methods of this invention have been described in terms of preferred embodiments, it will be apparent to those of skill in the art that variations may be applied to the compositions and/or methods and in the steps or in the sequence of steps of the method described herein without departing from the concept, spirit and scope of the invention. All such similar substitutes and modifications apparent to those skilled in the art are deemed to be within the spirit, scope and concept of the invention as defined by the appended claims.

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  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical & Material Sciences (AREA)
  • Ceramic Engineering (AREA)
  • Inorganic Chemistry (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Ceramic Capacitors (AREA)
  • Fixed Capacitors And Capacitor Manufacturing Machines (AREA)

Abstract

The present invention includes a method for creating an annular capacitor adjacent to via or imbedded metal structure allowing for device to be made in close proximity to the via connecting to a ground plane. The annular capacitor in close proximity to the metal filled via or imbedded metal structure allows the construction of capacitors, filters, or active devices enabling a smaller RF device and/or to shunt a signal to the integrated ground plane. This reduces the RF, Electronic noise and results in a reduced device size.

Description

ANNULAR CAPACITOR RF, MICROWAVE AND MM WAVE SYSTEMS
CROSS-REFERENCE TO RELATED APPLICATIONS
[0001] This PCT International Patent Application claims priority to U.S. Provisional Patent Application Serial No. 62/786,165 filed December 28, 2018, the contents of which is incorporated by reference herein in its entirety.
STATEMENT OF FEDERALLY FUNDED RESEARCH
[0002] None.
TECHNICAL FIELD OF THE INVENTION
[0003] The present invention relates in general to the field of creating a planar surface between via(s) and other structures and the substrate used for RF microwave and millimeter wave applications reducing device/system size and lowering parasitic noise and signals.
SUMMARY OF THE INVENTION
[0004] Without limiting the scope of the invention, its background is described in connection with creating a planar surface between vias and other structures and the substrate used for RF, microwave, and millimeter wave applications. The fundamental problem is the metals that fill a via or other metal structures in/on a substrate. Planarizing generally uses a form of chemical mechanical polishing (CMP) of the substrate and structure on/in the substrate to bring the surface to be flat and parallel. The challenge is that the substrates are quite hard relative to the other material on or in the substrate. As an example, boron silicate quartz and silicon have a hardness between 6 to 7 Mohs while typical metals (copper, gold and silver) used in high frequency application have a hardness of 2.5 to 3 Mohs. This hardness differential creates a fundamental problem when using CMP to planarize the surface. The softer metal structures are removed at a higher rate than the harder substrate. This creates a lower surface in the metal structure relative to the surface of the harder substrate. The transition from substrate to metal structure can be as great as 0.5 pm. In general, the magnitude of the depth of this transition is not uniform across a wafer. This transition or step creates a random thinning of structures/devices that are made on top of, or that cross the substrate metal transition.
[0005] At low frequencies, that solution is to simply create the device in the planar field of the substrate and run a metal interconnected to the metal structure such as a via or imbedded metal structure. Unfortunately, at RF, millimeter, and microwave frequencies this metal run creates to a via or imbedded metal structure, which creates additional inductive parasitic inductance and damages the performance of the circuit. Moving the device over the physical transition means that the device will have a random thickness variation, often referred to as necking of passive devices thickness as the device transitions from the substrate to the via or imbedded metal structure. One example of this is the creation of a capacitor where the metal electrodes and dielectric layer are thinner over the substrate metal transition. Variations in the thickness results in random capacitors across the die/substrate, creating random capacitance and filters RF, millimeter, and microwave circuits making the circuit/device. Placing a filter, capacitor, other passive device or/or active device adjacent and greater than 250 pm from the via induces parasitic inductance from the metal trace between the passive device and the via/imbedded metal structure.
[0006] The passive device can be placed in conjunction with active devices and can be combined to make a wide array of RF systems and subsystems including: antennas with gain, RF Circulators, RF Isolators, RF Combiners, RF Couplers, RF Splitters, Transformers, Switches, Multiplexors, Duplexers, and/or Diplexers that are connected by via as well as metal lines and via to each other and ground planes.
[0007] Constructing passive devices as close as possible to the via that shunts parasitic and electrical noise to a ground plane dramatically improves performance and reduces the die size for RF, microwave, and millimeter electronic systems. This invention provides a general solution to the constructing passive device in intimate proximity to metalized via or buried structure eliminating connecting to a ground plane and eliminating the random device performance and parasitic across the device substrate metal transition.
BRIEF DESCRIPTION OF THE DRAWINGS
[0008] For a more complete understanding of the features and advantages of the present invention, reference is now made to the detailed description of the invention along with the accompanying figures and in which:
FIG. 1 shows a schematic of an annular RF shunt capacitor.
FIG. 2 shows a schematic of an annular RF shunt capacitor with dimensional information between the adjacent annular element and the via.
FIG. 3 shows a schematic of a cross section for annular RF shunt capacitor. FIGS. 4A to 4F show a step-by-step method of making the device of the present invention. FIGS. 4A and 4B show cross-sectional side views of two of the steps of the method. FIGS. 4C to 4F show the remained of the steps for making the annular capacitor RF, microwave and millimeter (MM) wave systems of the present invention.
DETAILED DESCRIPTION OF THE INVENTION
[0009] While the production and use of various embodiments of the present invention are discussed in detail below, it should be appreciated that the present invention provides many applicable, inventive concepts that can be embodied in a wide variety of specific contexts. The specific embodiments discussed herein are merely illustrative of specific ways to make and use the invention and do not delimit the scope of the invention. To facilitate the understanding of this invention, a number of terms are defined below. Terms defined herein have meanings as commonly understood by a person of ordinary skill in the areas relevant to the present invention.
[0010] In one embodiment, the present invention includes a method for creating a substrate, an annular capacitor structure where the adjacent edge of the capacitive structure less than 250 pm of the via or imbedded metal structure in the substrate eliminates or minimizes the inductance associated with the metal line.
[0011] FIG. 1 shows an example of the device 10, that includes ports 12 and 14 that connect to a top metal 16, which can be a copper layer that connected to, or shunted, to a through-via hole 18. The design of the present invention reduces the variability from the capacitor build. In this design, the through-via hole is formed but does not affect the capacitor, thus eliminating that variable from design consideration(s). A top insulator 20 is positioned between the top metal 16 at the via 18, and a second metal layer 22 is deposited on the insulator 20. The structure is formed in a substrate 24.
[0012] FIG. 2 shows an internal view of the device 10, that shows the gap 26, between the through-hole via 18 and the first metal layer 16. Ports 12 and 14 that connect to a top metal 16, which can be a copper layer that connected to, or shunted, to a through-via hole 18.
[0013] FIG. 3 is a cross-section side view of the device 10. Ports 12 and 14 are shown in this configuration as being on opposite sides of the through-hole via 18, which is isolated from the top metal layer 16 and the second top metal layer 22, by insulator 20. A bottom metal ground plane 28 is depicted connected to through-hole via 18. [0014] Table 1 and FIGS. 4A to 4F show a step-by-step method of making the device 10 of the present invention. The process flow to create a planarized surface in a substrate with dissimilar materials to eliminate vertical transitions from a substrate to an added material is as follows:
Figure imgf000005_0001
Figure imgf000006_0001
[0015] It will be understood that particular embodiments described herein are shown by way of illustration and not as limitations of the invention. The principal features of this invention can be employed in various embodiments without departing from the scope of the invention. Those skilled in the art will recognize, or be able to ascertain using no more than routine experimentation, numerous equivalents to the specific procedures described herein. Such equivalents are considered to be within the scope of this invention and are covered by the claims.
[0016] All publications and patent applications mentioned in the specification are indicative of the level of skill of those skilled in the art to which this invention pertains. All publications and patent applications are herein incorporated by reference to the same extent as if each individual publication or patent application was specifically and individually indicated to be incorporated by reference.
[0017] The use of the word“a” or“an” when used in conjunction with the term“comprising” in the claims and/or the specification may mean“one,” but it is also consistent with the meaning of“one or more,”“at least one,” and“one or more than one.” The use of the term “or” in the claims is used to mean“and/or” unless explicitly indicated to refer to alternatives only or the alternatives are mutually exclusive, although the disclosure supports a definition that refers to only alternatives and“and/or.” Throughout this application, the term“about” is used to indicate that a value includes the inherent variation of error for the device, the method being employed to determine the value, or the variation that exists among the study subjects.
[0018] As used in this specification and claim(s), the words“comprising” (and any form of comprising, such as“comprise” and“comprises”),“having” (and any form of having, such as “have” and“has”),“including” (and any form of including, such as“includes” and“include”) or“containing” (and any form of containing, such as“contains” and“contain”) are inclusive or open-ended and do not exclude additional, unrecited elements or method steps. In embodiments of any of the compositions and methods provided herein,“comprising” may be replaced with“consisting essentially of’ or“consisting of’. As used herein, the phrase “consisting essentially of’ requires the specified integer(s) or steps as well as those that do not materially affect the character or function of the claimed invention. As used herein, the term “consisting” is used to indicate the presence of the recited integer (e.g., a feature, an element, a characteristic, a property, a method/process step or a limitation) or group of integers (e.g., feature(s), element(s), characteristic(s), property(ies), method/process steps or limitation(s)) only.
[0019] The term“or combinations thereof’ as used herein refers to all permutations and combinations of the listed items preceding the term. For example,“A, B, C, or combinations thereof’ is intended to include at least one of: A, B, C, AB, AC, BC, or ABC, and if order is important in a particular context, also BA, CA, CB, CBA, BCA, ACB, BAC, or CAB. Continuing with this example, expressly included are combinations that contain repeats of one or more item or term, such as BB, AAA, AB, BBC, AAABCCCC, CBBAAA, CABABB, and so forth. The skilled artisan will understand that typically there is no limit on the number of items or terms in any combination, unless otherwise apparent from the context.
[0020] As used herein, words of approximation such as, without limitation, “about”, "substantial" or "substantially" refers to a condition that when so modified is understood to not necessarily be absolute or perfect but would be considered close enough to those of ordinary skill in the art to warrant designating the condition as being present. The extent to which the description may vary will depend on how great a change can be instituted and still have one of ordinary skilled in the art recognize the modified feature as still having the required characteristics and capabilities of the unmodified feature. In general, but subject to the preceding discussion, a numerical value herein that is modified by a word of approximation such as“about” may vary from the stated value by at least ±1, 2, 3, 4, 5, 6, 7, 10, 12 or 15%.
[0021] All of the compositions and/or methods disclosed and claimed herein can be made and executed without undue experimentation in light of the present disclosure. While the compositions and methods of this invention have been described in terms of preferred embodiments, it will be apparent to those of skill in the art that variations may be applied to the compositions and/or methods and in the steps or in the sequence of steps of the method described herein without departing from the concept, spirit and scope of the invention. All such similar substitutes and modifications apparent to those skilled in the art are deemed to be within the spirit, scope and concept of the invention as defined by the appended claims.

Claims

What is claimed is:
1. A method for creating a capacitor for RF, millimeter or microwave device that at least partially circumscribes a metal filled via or trench based transmission line that connects a passive device or an active device and one or more ground planes using the steps of:
cutting a trench or via in a first surface of a substrate;
filling the trench or via with a first metal layer, and optionally form on a second surface of the substrate opposite the first surface a ground plane;
coating, exposing, and developing photoresist into a first annular shape that circumscribes the trench or via on the first surface of the substrate;
depositing a first metal layer on the first surface of the substrate;
coating, exposing, and developing photoresist into a second annular shape that circumscribes the trench or via on the first surface of the substrate, where an inner radii of the second annular shape is between 2 pm and 300 pm from an outer edge of the metal filled via or trench, and an external radii of the second annular shape is between 10 pm and 500 pm;
depositing a dielectric material on the first surface of the substrate to form a dielectric layer;
coating, exposing, and developing photoresist in third annular shape on the first surface of the substrate, wherein the third annular shape is at least 2 pm greater than the dielectric layer and wherein at least a portion of the third annular shape transitions to one or more active or passive devices of a circuit;
depositing a second metal layer on the first surface of the substrate;
coating, exposing, and developing photoresist to connect the second metal between the first and second surfaces of the substrate; and
depositing a metal to connect the first metal layer and a ground plane on the second surfaces of the substrate to form an electrode on the first surface of the substrate.
2. The method of claim 1, further produces a transition less than 0.1pm.
3. The method of claim 1, further comprising an adhesion layer between at least one of a side or bottom on the trench or via in the substrate prior to depositing the first metal layer.
4. The method of claim 1, further comprising depositing an adhesion layer prior to depositing the second metal layer.
5. The method of claim 1, wherein the metal is copper, silver, gold, aluminum, or a metal alloy.
6. The method of claim 1, wherein the one or more active or passive devices is at least one of: RF Filters, RF Circulators, RF Isolators, Antenna, Impedance Matching Elements, 50 Ohm Termination Elements, Integrated Ground Planes, RF Shielding Elements, EMI Shielding Elements, RF Combiners, RF Splitters, Transformers, Switches, power splitters, power combiners, Duplexer, or Diplexers on the first surface of the substrate to one or more input/output ports.
7. The method of claim 6, wherein the device is a RF Circuit that eliminates at least 95% of the RF parasitic signal associated with the transition from a substrate to the embedded metal.
8. The method of claim 6, wherein the device is a RF Circuit that eliminates at least 85% of the RF parasitic signal associated with the packaging a mount elements to a substrate.
9. The method of claim 6, wherein the device is a RF Circuit that eliminates at least 75% of the RF parasitic signal associated with the packaging a mount elements to a substrate.
10. The method of claim 1, wherein the substrate or the dielectric is a photodefinable glass.
11. The method of claim 1 , wherein the electrode comprises a first and a second port.
12. An electrode comprising a capacitor for RF, millimeter or microwave device that at least partially circumscribes a metal filled via or trench based transmission line that connects a passive device or an active device and one or more ground planes, wherein the electrode is made by a method comprising:
cutting a trench or via in a first surface of a substrate;
filling the trench or via with a first metal layer, and optionally on a second surface of the substrate opposite the first surface;
coating, exposing, and developing photoresist into a first annular shape that circumscribes the trench or via on the first surface of the substrate;
depositing a first metal layer on the first surface of the substrate; coating, exposing, and developing photoresist into a second annular shape that circumscribes the trench or via on the first surface of the substrate, where an inner radii of the second annular shape is between 2 pm and 300 pm from an outer edge of the metal filled via or trench, and an external radii of the second annular shape is between 10 pm and 500 pm;
depositing a dielectric material on the first surface of the substrate to form a dielectric layer;
coating, exposing, and developing photoresist in third annular shape on the first surface of the substrate, wherein the third annular shape is at least 2 pm greater than the dielectric layer and wherein at least a portion of the third annular shape transitions to one or more active or passive devices of a circuit;
depositing a second metal layer on the first surface of the substrate;
coating, exposing, and developing photoresist to connect the second metal between the first and second surfaces of the substrate; and
depositing a metal to connect the first metal layer and a ground plane on the second surfaces of the substrate to form the electrode on the first surface of the substrate.
13. The method of claim 1, further produces a transition less than 0.1pm.
14. The method of claim 1, further comprising an adhesion layer between at least one of a side or bottom on the trench or via in the substrate prior to depositing the first metal layer.
15. The method of claim 1, further comprising depositing an adhesion layer prior to depositing the second metal layer.
16. The method of claim 1, wherein the metal is copper, silver, gold, aluminum, or a metal alloy.
17. The method of claim 1, wherein the one or more active or passive devices is at least one of: RF Filters, RF Circulators, RF Isolators, Antenna, Impedance Matching Elements, 50 Ohm Termination Elements, Integrated Ground Planes, RF Shielding Elements, EMI
Shielding Elements, RF Combiners, RF Splitters, Transformers, Switches, power splitters, power combiners, Duplexer, or Diplexers on the first surface of the substrate to one or more input/output ports.
18. The method of claim 6, wherein the device is a RF Circuit that eliminates at least 95% of the RF parasitic signal associated with the transition from a substrate to the embedded
19. The method of claim 6, wherein the device is a RF Circuit that eliminates at least 85% of the RF parasitic signal associated with the packaging a mount elements to a substrate.
20. The method of claim 6, wherein the device is a RF Circuit that eliminates at least 75% of the RF parasitic signal associated with the packaging a mount elements to a substrate.
21. The method of claim 1, wherein the substrate or the dielectric is a photodefmable glass.
22. The method of claim 1, wherein the electrode comprises a first and a second port.
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Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US11139582B2 (en) 2018-09-17 2021-10-05 3D Glass Solutions, Inc. High efficiency compact slotted antenna with a ground plane
US11270843B2 (en) 2018-12-28 2022-03-08 3D Glass Solutions, Inc. Annular capacitor RF, microwave and MM wave systems
WO2022265783A1 (en) * 2021-06-15 2022-12-22 3D Glass Solutions, Inc. Radio frequency (rf) integrated power-conditioning capacitor
US11594457B2 (en) 2018-12-28 2023-02-28 3D Glass Solutions, Inc. Heterogenous integration for RF, microwave and MM wave systems in photoactive glass substrates

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2020014661A1 (en) 2018-07-13 2020-01-16 Knowles Cazenovia, Inc. Millimeter wave filter array
WO2021211855A1 (en) 2020-04-17 2021-10-21 3D Glass Solutions, Inc. Broadband inductor

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5779521A (en) * 1995-03-03 1998-07-14 Sony Corporation Method and apparatus for chemical/mechanical polishing
US7439128B2 (en) * 2003-04-07 2008-10-21 International Business Machines Corporation Method of creating deep trench capacitor using a P+ metal electrode
US20120161330A1 (en) * 2010-12-22 2012-06-28 Intel Corporation Device packaging with substrates having embedded lines and metal defined pads
US20130183805A1 (en) * 2010-09-14 2013-07-18 International Business Machines Corporation High capacitance trench capacitor

Family Cites Families (243)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2515941A (en) 1946-09-09 1950-07-18 Corning Glass Works Photosensitive opal glass
BE478714A (en) 1946-09-09
BE513836A (en) 1951-08-30
US2628160A (en) 1951-08-30 1953-02-10 Corning Glass Works Sculpturing glass
US2971853A (en) 1953-03-05 1961-02-14 Corning Glass Works Ceramic body and method of making it
US3281264A (en) 1963-01-31 1966-10-25 Coast Metals Inc Method of gold-plating aluminum
JPS5321827B2 (en) 1973-02-12 1978-07-05
US3993401A (en) 1975-02-10 1976-11-23 Minnesota Mining And Manufacturing Company Retroreflective material including geometric fresnel zone plates
US3985531A (en) 1975-03-19 1976-10-12 Corning Glass Works Spontaneously-formed fluormica glass-ceramics
US4029605A (en) 1975-12-08 1977-06-14 Hercules Incorporated Metallizing compositions
US4131516A (en) 1977-07-21 1978-12-26 International Business Machines Corporation Method of making metal filled via holes in ceramic circuit boards
US4413061A (en) 1978-02-06 1983-11-01 International Business Machines Corporation Glass-ceramic structures and sintered multilayer substrates thereof with circuit patterns of gold, silver or copper
JPS5615587A (en) 1979-07-17 1981-02-14 Matsushita Electric Industrial Co Ltd Sheathed heater with safety element
JPS57200042A (en) 1981-06-02 1982-12-08 Hoya Corp Exposure method for chemically machinable photosensitive glass
JPS58125907A (en) * 1982-01-22 1983-07-27 Nissan Motor Co Ltd High frequency noise eliminating filter
US4537612A (en) 1982-04-01 1985-08-27 Corning Glass Works Colored photochromic glasses and method
JPS5939949U (en) * 1982-09-08 1984-03-14 アルプス電気株式会社 High frequency circuit equipment
US4647940A (en) 1982-09-27 1987-03-03 Rogers Corporation Parallel plate waveguide antenna
US5078771A (en) 1989-02-07 1992-01-07 Canyon Materials, Inc. Method of making high energy beam sensitive glasses
US4514053A (en) 1983-08-04 1985-04-30 Corning Glass Works Integral photosensitive optical device and method
JPS61149905A (en) 1984-12-25 1986-07-08 Fujitsu Ltd Optical multiplexer and demultiplexer
JPS61231529A (en) 1985-04-08 1986-10-15 Agency Of Ind Science & Technol Optical control type optical switch device
JPS62202840A (en) 1986-03-03 1987-09-07 Toshiba Corp Working of photosensitive glass
US4692015A (en) 1986-03-14 1987-09-08 Xerox Corporation Short focal lens array with multi-magnification properties
JPS63128699A (en) 1986-11-19 1988-06-01 株式会社日立製作所 Light-sensitive glass-ceramic multilayer interconnection board
CA1320507C (en) 1987-10-07 1993-07-20 Elizabeth A. Boylan Thermal writing on glass or glass-ceramic substrates and copper-exuding glasses
US4788165A (en) 1987-10-07 1988-11-29 Corning Glass Works Copper-exuding, boroaluminosilicate glasses
US4942076A (en) 1988-11-03 1990-07-17 Micro Substrates, Inc. Ceramic substrate with metal filled via holes for hybrid microcircuits and method of making the same
JP2737292B2 (en) 1989-09-01 1998-04-08 富士通株式会社 Copper paste and metallizing method using the same
US5147740A (en) 1990-08-09 1992-09-15 Rockwell International Corporation Structure and process for fabricating conductive patterns having sub-half micron dimensions
US5215610A (en) 1991-04-04 1993-06-01 International Business Machines Corporation Method for fabricating superconductor packages
BE1004844A7 (en) 1991-04-12 1993-02-09 Laude Lucien Diego Metallisation methods surface using metal powder.
US5212120A (en) 1991-06-10 1993-05-18 Corning Incorporated Photosensitive glass
US5395498A (en) 1991-11-06 1995-03-07 Gombinsky; Moshe Method for separating biological macromolecules and means therfor
JPH05139787A (en) 1991-11-19 1993-06-08 Seikosha Co Ltd Working method for photosensitive glass
US5374291A (en) 1991-12-10 1994-12-20 Director-General Of Agency Of Industrial Science And Technology Method of processing photosensitive glass
JPH05206706A (en) 1992-01-30 1993-08-13 Reader Denshi Kk Interdigital type band pass filter
US6258497B1 (en) 1992-07-29 2001-07-10 International Business Machines Corporation Precise endpoint detection for etching processes
US5371466A (en) 1992-07-29 1994-12-06 The Regents Of The University Of California MRI RF ground breaker assembly
US6017681A (en) 1992-11-09 2000-01-25 Fujitsu Limited Method of coupling optical parts and method of forming a mirror
GB2290171B (en) 1994-06-03 1998-01-21 Plessey Semiconductors Ltd Inductor chip device
JPH0826767A (en) 1994-07-13 1996-01-30 Nippon Glass Kk Soda lime-silica photosensitive glass and its production
JPH08179155A (en) 1994-12-26 1996-07-12 Ricoh Co Ltd Method for coupling lens and optical fiber and method for producing lens substrate
JPH11502617A (en) 1995-03-10 1999-03-02 メソ スケール テクノロジーズ，エルエルシー Multi-array multispecific electrochemiluminescence test
US5919607A (en) 1995-10-26 1999-07-06 Brown University Research Foundation Photo-encoded selective etching for glass based microtechnology applications
US5733370A (en) 1996-01-16 1998-03-31 Seagate Technology, Inc. Method of manufacturing a bicrystal cluster magnetic recording medium
JPH107435A (en) 1996-06-26 1998-01-13 Ngk Spark Plug Co Ltd Glass ceramic wiring board and method of manufacturing the same
WO1998013850A1 (en) 1996-09-26 1998-04-02 Asahi Glass Company Ltd. Plasma display protective plate and its manufacturing method
US6562523B1 (en) 1996-10-31 2003-05-13 Canyon Materials, Inc. Direct write all-glass photomask blanks
JPH10199728A (en) 1997-01-07 1998-07-31 Murata Mfg Co Ltd Thin-film coil component and method of manufacturing the same
US5850623A (en) 1997-03-14 1998-12-15 Eastman Chemical Company Method for standardizing raman spectrometers to obtain stable and transferable calibrations
WO1998049698A2 (en) 1997-04-25 1998-11-05 Koninklijke Philips Electronics N.V. Method of manufacturing an enveloped multilayer capacitor and an envelope multilayer capacitor
US5998224A (en) 1997-05-16 1999-12-07 Abbott Laboratories Magnetically assisted binding assays utilizing a magnetically responsive reagent
US6287965B1 (en) 1997-07-28 2001-09-11 Samsung Electronics Co, Ltd. Method of forming metal layer using atomic layer deposition and semiconductor device having the metal layer as barrier metal layer or upper or lower electrode of capacitor
JPH11176815A (en) 1997-12-15 1999-07-02 Ricoh Co Ltd Dry etching end point determination method and dry etching apparatus
US6598291B2 (en) 1998-03-20 2003-07-29 Viasystems, Inc. Via connector and method of making same
US6115521A (en) 1998-05-07 2000-09-05 Trw Inc. Fiber/waveguide-mirror-lens alignment device
WO1999063557A1 (en) 1998-05-29 1999-12-09 Nissha Printing Co., Ltd. Printed annular coil and method of manufacture thereof
US6171886B1 (en) 1998-06-30 2001-01-09 Eastman Kodak Company Method of making integrated hybrid silicon-based micro-actuator devices
JP2000199827A (en) 1998-10-27 2000-07-18 Sony Corp Optical waveguide device and method of manufacturing the same
US6136210A (en) 1998-11-02 2000-10-24 Xerox Corporation Photoetching of acoustic lenses for acoustic ink printing
JP2000228615A (en) 1999-02-05 2000-08-15 Tokin Corp LC bandpass filter
US6538538B2 (en) * 1999-02-25 2003-03-25 Formfactor, Inc. High frequency printed circuit board via
US6511793B1 (en) 1999-03-24 2003-01-28 Lg Electronics Inc. Method of manufacturing microstructure using photosensitive glass substrate
US6485690B1 (en) 1999-05-27 2002-11-26 Orchid Biosciences, Inc. Multiple fluid sample processor and system
JP3756041B2 (en) 1999-05-27 2006-03-15 Ｈｏｙａ株式会社 Manufacturing method of multilayer printed wiring board
FR2795745B1 (en) 1999-06-30 2001-08-03 Saint Gobain Vitrage PROCESS FOR DEPOSITING A TUNGSTENE AND / OR MOLYBDENE LAYER ON A GLASS, CERAMIC OR VITROCERAMIC SUBSTRATE, AND SUBSTRATE THUS COATED
JP2001033664A (en) 1999-07-21 2001-02-09 Hitachi Cable Ltd Optical fiber block
US6278352B1 (en) 1999-07-26 2001-08-21 Taiwan Semiconductor Manufacturing Company High efficiency thin film inductor
US7179638B2 (en) 1999-07-30 2007-02-20 Large Scale Biology Corporation Microarrays and their manufacture by slicing
US6538775B1 (en) 1999-09-16 2003-03-25 Reveo, Inc. Holographically-formed polymer dispersed liquid crystals with multiple gratings
US6403286B1 (en) 1999-11-04 2002-06-11 Corning Incorporated High aspect ratio patterning of glass film
JP2001206735A (en) 2000-01-25 2001-07-31 Central Glass Co Ltd Plating method
US6579817B2 (en) 2000-04-26 2003-06-17 Matsushita Electric Industrial Co., Ltd. Dielectric ceramic composition and method for producing the same, and device for communication apparatus using the same
US6329702B1 (en) 2000-07-06 2001-12-11 Tyco Electronics Corporation High frequency carrier
US6495411B1 (en) 2000-07-13 2002-12-17 Promos Technology Inc. Technique to improve deep trench capacitance by increasing surface thereof
US6510264B2 (en) 2000-07-31 2003-01-21 Corning Incorporated Bulk internal bragg gratings and optical devices
US7829348B2 (en) 2000-09-22 2010-11-09 Iowa State University Research Foundation, Inc. Raman-active reagents and the use thereof
JP4361271B2 (en) 2000-10-10 2009-11-11 バイオトローブ・インコーポレイテツド Instruments for assay, synthesis, and storage, and methods of making, using, and operating the same
US7033821B2 (en) 2000-11-08 2006-04-25 Surface Logix, Inc. Device for monitoring cell motility in real-time
KR100392956B1 (en) 2000-12-30 2003-07-28 엘지전자 주식회사 Method of Fabricating the Barrier Rib on Plasma Display Panel
US6932933B2 (en) 2001-03-30 2005-08-23 The Aerospace Corporation Ultraviolet method of embedding structures in photocerams
US6824974B2 (en) 2001-06-11 2004-11-30 Genorx, Inc. Electronic detection of biological molecules using thin layers
US6771860B2 (en) 2001-06-29 2004-08-03 Xanoptix, Inc. Module mounted aligning optical connector
DK1412725T3 (en) 2001-06-29 2019-03-25 Meso Scale Technologies Llc Multi-well plates for LUMINESCENSE TEST MEASUREMENTS
JPWO2003007379A1 (en) 2001-07-12 2004-11-04 株式会社日立製作所 Electronic circuit components
US6843902B1 (en) 2001-07-20 2005-01-18 The Regents Of The University Of California Methods for fabricating metal nanowires
US20030025227A1 (en) 2001-08-02 2003-02-06 Zograph, Llc Reproduction of relief patterns
EP1469903A2 (en) 2001-09-28 2004-10-27 BioValve Technologies, Inc. Microneedle with membrane
KR100814806B1 (en) 2001-10-15 2008-03-19 삼성에스디아이 주식회사 Spacer manufacturing method and flat panel display element having this spacer
US20040171076A1 (en) 2001-12-20 2004-09-02 Dejneka Matthew J. Detectable micro to nano sized structures, methods of manufacture and use
US7064103B2 (en) 2002-01-04 2006-06-20 Becton, Dickinson And Company Binding protein as biosensors
US7470518B2 (en) 2002-02-12 2008-12-30 Cellectricon Ab Systems and method for rapidly changing the solution environment around sensors
US20030156819A1 (en) 2002-02-15 2003-08-21 Mark Pruss Optical waveguide
AU2003220148A1 (en) 2002-03-14 2003-09-29 Corning Incorporated Fiber array and methods of fabrication
EP1499875A4 (en) 2002-04-30 2007-10-03 Univ Maryland FLUORESCENCE DETECTION
JP2003329877A (en) 2002-05-14 2003-11-19 Nippon Sheet Glass Co Ltd Optical module
US6580054B1 (en) 2002-06-10 2003-06-17 New Wave Research Scribing sapphire substrates with a solid state UV laser
WO2004025262A2 (en) 2002-09-11 2004-03-25 Synamem Corporation Membrane-based assays
US6875544B1 (en) 2002-10-03 2005-04-05 Sandia Corporation Method for the fabrication of three-dimensional microstructures by deep X-ray lithography
US20040184705A1 (en) 2003-01-08 2004-09-23 Mikihiro Shimada Optical waveguide component and method of manufacturing the same
US6783920B2 (en) 2003-01-15 2004-08-31 The Aerospace Corporation Photosensitive glass variable laser exposure patterning method
DE10304606B3 (en) 2003-02-05 2004-06-03 Magnet-Physik Dr. Steingroever Gmbh Transformer providing high electrical currents e.g. for magnetization of magnets or magnetic field deformation, has secondary provided by electrically-conductive plate divided by slit to providing current terminals
US7601491B2 (en) 2003-02-06 2009-10-13 Becton, Dickinson And Company Pretreatment method for extraction of nucleic acid from biological samples and kits therefor
WO2004073039A2 (en) 2003-02-11 2004-08-26 Oplink Communications, Inc. Ultra broadband inductor assembly
US7150569B2 (en) 2003-02-24 2006-12-19 Nor Spark Plug Co., Ltd. Optical device mounted substrate assembly
ATE475999T1 (en) 2003-03-04 2010-08-15 Rohm & Haas Elect Mat COAXIAL WAVEGUIDE MICROSTRUCTURES AND METHODS FOR FORMING THEM
US20040198582A1 (en) 2003-04-01 2004-10-07 Borrelli Nicholas F. Optical elements and methods of making optical elements
US7579077B2 (en) 2003-05-05 2009-08-25 Nanosys, Inc. Nanofiber surfaces for use in enhanced surface area applications
US7335972B2 (en) 2003-11-13 2008-02-26 Sandia Corporation Heterogeneously integrated microsystem-on-a-chip
US20050170670A1 (en) 2003-11-17 2005-08-04 King William P. Patterning of sacrificial materials
US7316063B2 (en) 2004-01-12 2008-01-08 Micron Technology, Inc. Methods of fabricating substrates including at least one conductive via
JP4153442B2 (en) 2004-02-02 2008-09-24 シャープ株式会社 Manufacturing method of optical module
US7057881B2 (en) 2004-03-18 2006-06-06 Nanosys, Inc Nanofiber surface based capacitors
JP4394999B2 (en) 2004-04-12 2010-01-06 大日本印刷株式会社 Passive element built-in wiring board and manufacturing method thereof
CN1262500C (en) 2004-04-16 2006-07-05 武汉理工大学 Method for preparing microcrystalline glass/glass carrier material having nano holes in high density
US7190594B2 (en) * 2004-05-14 2007-03-13 Commscope Solutions Properties, Llc Next high frequency improvement by using frequency dependent effective capacitance
US7176152B2 (en) 2004-06-09 2007-02-13 Ferro Corporation Lead-free and cadmium-free conductive copper thick film pastes
DE202004019052U1 (en) 2004-06-09 2005-10-27 Schott Ag Construction of diffractive optics through structured glass coating
JP4622359B2 (en) 2004-07-22 2011-02-02 コニカミノルタホールディングス株式会社 Inkjet head manufacturing method
US7132054B1 (en) 2004-09-08 2006-11-07 Sandia Corporation Method to fabricate hollow microneedle arrays
US20060147344A1 (en) 2004-09-30 2006-07-06 The University Of Cincinnati Fully packed capillary electrophoretic separation microchips with self-assembled silica colloidal particles in microchannels and their preparation methods
JP4843611B2 (en) 2004-10-01 2011-12-21 デ，ロシェモント，エル．，ピエール Ceramic antenna module and manufacturing method thereof
JP4795677B2 (en) 2004-12-02 2011-10-19 ルネサスエレクトロニクス株式会社 Semiconductor device, semiconductor module using the same, and manufacturing method of semiconductor device
JP2006179564A (en) 2004-12-21 2006-07-06 Nec Corp Semiconductor connection substrate, semiconductor device, semiconductor device, semiconductor substrate, and method for manufacturing semiconductor connection substrate
DE102005003594B4 (en) 2004-12-31 2016-02-18 Schott Ag Method for producing an optical component, component produced according to the method, and device comprising such components
KR100682919B1 (en) 2005-01-20 2007-02-15 삼성전자주식회사 Formation method of fine metal thin film pattern, biomaterial fixing substrate and biochip
US7714688B2 (en) 2005-01-20 2010-05-11 Avx Corporation High Q planar inductors and IPD applications
US7964380B2 (en) 2005-01-21 2011-06-21 Argylia Technologies Nanoparticles for manipulation of biopolymers and methods of thereof
JP2006236516A (en) 2005-02-28 2006-09-07 Hitachi Ltd Optical head, optical information reproducing apparatus and manufacturing method thereof
EP1873923A4 (en) 2005-04-18 2013-12-04 Murata Manufacturing Co HIGH FREQUENCY MODULE
US7355704B2 (en) 2005-06-13 2008-04-08 Solaris Nanosciences, Inc. Chemical and biological sensing using metallic particles in amplifying and absorbing media
JP2006352750A (en) 2005-06-20 2006-12-28 Denso Corp Antenna coil, resonant antenna using the same, and card-type radio
US7755291B2 (en) 2005-06-27 2010-07-13 Osram Sylvania Inc. Incandescent lamp that emits infrared light and a method of making the lamp
DE102005039323B4 (en) 2005-08-19 2009-09-03 Infineon Technologies Ag Guideway arrangement and associated production method
US7410763B2 (en) 2005-09-01 2008-08-12 Intel Corporation Multiplex data collection and analysis in bioanalyte detection
TW200721064A (en) 2005-11-29 2007-06-01 Novatek Microelectronics Corp Timing controller chip
US8003408B2 (en) 2005-12-29 2011-08-23 Intel Corporation Modification of metal nanoparticles for improved analyte detection by surface enhanced Raman spectroscopy (SERS)
GB2434913A (en) 2006-02-02 2007-08-08 Xsil Technology Ltd Support for wafer singulation
US7812416B2 (en) 2006-05-22 2010-10-12 Cardiomems, Inc. Methods and apparatus having an integrated circuit attached to fused silica
JP2007318002A (en) 2006-05-29 2007-12-06 Matsushita Electric Ind Co Ltd Solid-state imaging device and manufacturing method thereof
US8192795B2 (en) 2006-06-28 2012-06-05 Northwestern University Etching and hole arrays
US7990679B2 (en) 2006-07-14 2011-08-02 Dais Analytic Corporation Nanoparticle ultracapacitor
US8061017B2 (en) 2006-08-28 2011-11-22 Avago Technologies Ecbu Ip (Singapore) Pte. Ltd. Methods of making coil transducers
US7847669B2 (en) 2006-12-06 2010-12-07 Georgia Tech Research Corporation Micro-electromechanical switched tunable inductor
US7556440B2 (en) 2006-12-22 2009-07-07 Lightwire Inc. Dual-lensed unitary optical receiver assembly
KR100849791B1 (en) 2007-03-12 2008-07-31 삼성전기주식회사 Capacitor embedded printed circuit board
JP2008225339A (en) 2007-03-15 2008-09-25 Hitachi Cable Ltd Optical system connection structure, optical member, and optical transmission module
WO2008119080A1 (en) 2007-03-28 2008-10-02 Life Bioscience Inc. Compositions and methods to fabricate a photoactive substrate suitable for shaped glass structures
JP4458296B2 (en) 2007-03-30 2010-04-28 Ｔｄｋ株式会社 Dielectric resonator, dielectric filter, and characteristic adjustment method thereof
US8143431B2 (en) 2007-06-05 2012-03-27 Air Products And Chemicals, Inc. Low temperature thermal conductive inks
WO2008154931A1 (en) 2007-06-18 2008-12-24 Danmarks Tekniske Universitet (Technical University Of Denmark) Adsorbent beads suitable for use in separation of biological molecules
TW200905703A (en) 2007-07-27 2009-02-01 Delta Electronics Inc Magnetic device and manufacturing method thereof
US8492315B2 (en) 2007-08-28 2013-07-23 Life Bioscience, Inc. Method of providing a pattern of biological-binding areas for biological testing
US8211625B2 (en) 2007-11-07 2012-07-03 Massachusetts Institute Of Technology Method of forming a locally periodic 3D structure with larger-scale variation in periodic properties and applications thereof
JP5133047B2 (en) 2007-12-28 2013-01-30 太陽誘電株式会社 Manufacturing method of electronic parts
US7792823B2 (en) 2008-01-15 2010-09-07 International Business Machines Corporation Maintained symbol table only index
US8569678B2 (en) 2008-03-04 2013-10-29 The Regents Of The University Of California Micron-scale lens array having diffracting structures
EP2253467A4 (en) 2008-03-12 2013-01-16 Dainippon Printing Co Ltd Decorative sheet for three-dimensional work
WO2009126649A2 (en) 2008-04-07 2009-10-15 Life Bioscience, Inc. Method of providing particles having biological-binding areas for biological applications
US7948342B2 (en) 2008-07-24 2011-05-24 Cutt-A-Watt Enterprises, Llc Electromotive rectification system
WO2010011939A2 (en) 2008-07-25 2010-01-28 Life Bioscience, Inc. Assay plates, methods and systems having one or more etched features
KR101031134B1 (en) 2008-09-11 2011-04-27 주식회사 동부하이텍 Contact of semiconductor device and manufacturing method thereof
US20100237462A1 (en) 2009-03-18 2010-09-23 Benjamin Beker Package Level Tuning Techniques for Propagation Channels of High-Speed Signals
EP2417427A4 (en) 2009-04-03 2012-08-08 Res Triangle Inst APPARATUS, SYSTEM AND METHOD FOR OPTICAL SCANNING OF MICROELECTROMECHANICAL SYSTEM BASED ON DOOR-TO-FALSE ELEMENT
KR100941691B1 (en) 2009-04-10 2010-02-12 (주)제이스 Photosensitve glass wafer and method for manufacturing potosensitve glass wafer and semiconductor probe chip
US7989248B2 (en) 2009-07-02 2011-08-02 Advanced Microfab, LLC Method of forming monolithic CMOS-MEMS hybrid integrated, packaged structures
EP2456772A4 (en) 2009-07-24 2013-02-27 Amazentis Sa COMPOUNDS, COMPOSITIONS AND METHODS FOR PROTECTING BRAIN HEALTH IN NEURODEGENERATIVE DISORDERS
TWI410380B (en) 2009-11-11 2013-10-01 Ind Tech Res Inst Method and system of manufacturing photosensitive glass microstructure
US8479375B2 (en) 2010-01-13 2013-07-09 The Aerospace Corporation Method of making an embedded electromagnetic device
US20110217657A1 (en) 2010-02-10 2011-09-08 Life Bioscience, Inc. Methods to fabricate a photoactive substrate suitable for microfabrication
WO2011100445A1 (en) 2010-02-10 2011-08-18 Life Bioscience, Inc. Methods to fabricate a photoactive substrate suitable for microfabrication
US9275934B2 (en) 2010-03-03 2016-03-01 Georgia Tech Research Corporation Through-package-via (TPV) structures on inorganic interposer and methods for fabricating same
JP5868574B2 (en) * 2010-03-15 2016-02-24 富士通株式会社 Semiconductor device and manufacturing method thereof
US8411459B2 (en) 2010-06-10 2013-04-02 Taiwan Semiconductor Manufacturing Company, Ltd Interposer-on-glass package structures
US9564320B2 (en) 2010-06-18 2017-02-07 Soraa, Inc. Large area nitride crystal and method for making it
JP5644340B2 (en) 2010-10-04 2014-12-24 株式会社デンソー Capacitor structure and manufacturing method thereof
US20130233202A1 (en) 2010-12-03 2013-09-12 Ei Du Pont De Nemours And Company Inks and processes for preparing copper indium gallium sulfide/selenide coatings and films
US8502340B2 (en) 2010-12-09 2013-08-06 Tessera, Inc. High density three-dimensional integrated capacitors
JP2012194455A (en) 2011-03-17 2012-10-11 Enplas Corp Lens array
KR101167691B1 (en) 2011-08-09 2012-07-20 주식회사 비티엔아이티솔루션스 Multilayer capacitor having photosensitive glass, fabrication method thereof, and the use the same
US9287614B2 (en) 2011-08-31 2016-03-15 The Regents Of The University Of Michigan Micromachined millimeter-wave frequency scanning array
JP2013062473A (en) 2011-09-15 2013-04-04 Toppan Printing Co Ltd Wiring board and manufacturing method therefor
JP5541425B2 (en) 2012-01-16 2014-07-09 株式会社村田製作所 RF signal blocking device
US9293269B2 (en) 2012-02-08 2016-03-22 Dais Analytic Corporation Ultracapacitor tolerating electric field of sufficient strength
US9285554B2 (en) 2012-02-10 2016-03-15 International Business Machines Corporation Through-substrate optical coupling to photonics chips
JP2013217989A (en) 2012-04-04 2013-10-24 Hitachi Chemical Co Ltd Optical fiber connector
US8896521B2 (en) 2012-04-24 2014-11-25 Qualcomm Mems Technologies, Inc. Metal-insulator-metal capacitors on glass substrates
US20130308906A1 (en) 2012-05-21 2013-11-21 LaXense, Inc. System and method for dense coupling between optical devices and an optical fiber array
US8815638B2 (en) 2012-06-19 2014-08-26 E I Du Pont De Nemours And Company Method of manufacturing thick-film electrode
US20140035935A1 (en) 2012-08-03 2014-02-06 Qualcomm Mems Technologies, Inc. Passives via bar
US10115671B2 (en) 2012-08-03 2018-10-30 Snaptrack, Inc. Incorporation of passives and fine pitch through via for package on package
WO2014028022A1 (en) 2012-08-16 2014-02-20 Hewlett-Packard Development Company, L.P. Diagonal openings in photodefinable glass
US9755305B2 (en) 2012-08-16 2017-09-05 Ethertronics, Inc. Active antenna adapted for impedance matching and band switching using a shared component
US8872349B2 (en) 2012-09-11 2014-10-28 Intel Corporation Bridge interconnect with air gap in package assembly
WO2014043267A1 (en) 2012-09-12 2014-03-20 Life Bioscience, Inc. Methods of fabricating photoactive substrates suitable for electromagnetic transmission and filtering applications
US20140104284A1 (en) 2012-10-16 2014-04-17 Qualcomm Mems Technologies, Inc. Through substrate via inductors
BR112015008949B1 (en) 2012-10-19 2021-11-30 Rutgers, The State University Of New Jersey METHOD FOR FORMING A GRAPHENE-REINFORCED POLYMER MATRIX COMPOUND
US20140144681A1 (en) 2012-11-27 2014-05-29 Qualcomm Mems Technologies, Inc. Adhesive metal nitride on glass and related methods
US9035457B2 (en) 2012-11-29 2015-05-19 United Microelectronics Corp. Substrate with integrated passive devices and method of manufacturing the same
TWI565989B (en) 2012-12-14 2017-01-11 鴻海精密工業股份有限公司 Optical fiber connector
US20140247269A1 (en) 2013-03-04 2014-09-04 Qualcomm Mems Technologies, Inc. High density, low loss 3-d through-glass inductor with magnetic core
US20140272688A1 (en) 2013-03-15 2014-09-18 Photronics, Inc. Grayscale lithography of photo definable glass
JP6015567B2 (en) 2013-06-12 2016-10-26 株式会社デンソー Feedthrough capacitor
US20150079738A1 (en) 2013-06-18 2015-03-19 Stephen P. Barlow Method for producing trench high electron mobility devices
US9093975B2 (en) 2013-08-19 2015-07-28 Harris Corporation Microelectromechanical systems comprising differential inductors and methods for making the same
US9449753B2 (en) 2013-08-30 2016-09-20 Qualcomm Incorporated Varying thickness inductor
US20160185653A1 (en) 2013-09-04 2016-06-30 Hoya Corporation Silicate ceramics, plate-like substrate, and method of producing plate-like substrate
WO2015047330A1 (en) 2013-09-27 2015-04-02 Intel Corporation Die package with superposer substrate for passive components
JP6293875B2 (en) 2013-10-07 2018-04-25 コーニンクレッカ フィリップス エヌ ヴェＫｏｎｉｎｋｌｉｊｋｅ Ｐｈｉｌｉｐｓ Ｎ．Ｖ． Precision batch manufacturing method for manufacturing ferrite rods
EP3084491B1 (en) 2013-12-19 2019-09-25 3M Innovative Properties Company Multimode optical connector
US20150201495A1 (en) 2014-01-14 2015-07-16 Qualcomm Incorporated Stacked conductive interconnect inductor
KR20160140598A (en) 2014-01-24 2016-12-07 3디 글래스 솔루션즈 인코포레이티드 Methods of fabricating photoactive substrates for micro-lenses and arrays
US9548350B2 (en) * 2014-02-10 2017-01-17 Qualcomm Incorporated High quality factor capacitors and methods for fabricating high quality factor capacitors
KR101940981B1 (en) 2014-05-05 2019-01-23 3디 글래스 솔루션즈 인코포레이티드 2d and 3d inductors antenna and transformers fabricating photoactive substrates
KR102233579B1 (en) 2014-08-12 2021-03-30 삼성전자주식회사 Pellicle for an extreme ultraviolet(euv) lithography
US10201901B2 (en) 2015-01-29 2019-02-12 Canon Kabushiki Kaisha Robot apparatus, method for controlling robot, program, and recording medium
US9647306B2 (en) 2015-03-04 2017-05-09 Skyworks Solutions, Inc. RF filter comprising N coaxial resonators arranged in a specified interdigitation pattern
US20160265974A1 (en) 2015-03-09 2016-09-15 Corning Incorporated Glass waveguide spectrophotometer
US9385083B1 (en) 2015-05-22 2016-07-05 Hrl Laboratories, Llc Wafer-level die to package and die to die interconnects suspended over integrated heat sinks
US9853624B2 (en) 2015-06-26 2017-12-26 Qorvo Us, Inc. SAW resonator with resonant cavities
US9712131B2 (en) 2015-09-15 2017-07-18 Karl L. Thorup High isolation power combiner/splitter and coupler
US10070533B2 (en) 2015-09-30 2018-09-04 3D Glass Solutions, Inc. Photo-definable glass with integrated electronics and ground plane
US9935004B2 (en) 2016-01-21 2018-04-03 Applied Materials, Inc. Process and chemistry of plating of through silicon vias
US20190177213A1 (en) 2016-01-31 2019-06-13 3D Glass Solutions, Inc. Multi-Layer Photo Definable Glass with Integrated Devices
KR20200010598A (en) 2016-02-25 2020-01-30 3디 글래스 솔루션즈 인코포레이티드 3d capacitor and capacitor array fabricating photoactive substrates
US9819991B1 (en) 2016-02-29 2017-11-14 Amazon Technologies, Inc. Adaptive impedance matching interface
WO2017177171A1 (en) 2016-04-08 2017-10-12 3D Glass Solutions, Inc. Methods of fabricating photosensitive substrates suitable for optical coupler
US9635757B1 (en) 2016-08-11 2017-04-25 Unimicron Technology Corp. Circuit board and manufacturing method thereof
EP3327806B1 (en) 2016-11-24 2021-07-21 Murata Integrated Passive Solutions Integrated electronic component suitable for broadband biasing
WO2018200804A1 (en) 2017-04-28 2018-11-01 3D Glass Solutions, Inc. Rf circulator
US10367243B2 (en) 2017-05-02 2019-07-30 Bae Systems Information And Electronic Systems Integration Inc. Miniature LTCC coupled stripline resonator filters for digital receivers
JP7083600B2 (en) 2017-05-25 2022-06-13 凸版印刷株式会社 Glass circuit board with built-in capacitor and its manufacturing method
AU2018297035B2 (en) 2017-07-07 2021-02-25 3D Glass Solutions, Inc. 2D and 3D RF lumped element devices for RF system in a package photoactive glass substrates
JP2019106429A (en) 2017-12-11 2019-06-27 凸版印刷株式会社 Glass wiring substrate, method for manufacturing the same, and semiconductor device
WO2019118761A1 (en) 2017-12-15 2019-06-20 3D Glass Solutions, Inc. Coupled transmission line resonate rf filter
KR102600200B1 (en) 2018-01-04 2023-11-10 3디 글래스 솔루션즈 인코포레이티드 Impedance matching conductive structure for high-efficiency RF circuits
KR102145746B1 (en) 2018-04-10 2020-08-19 3디 글래스 솔루션즈 인코포레이티드 RF integrated power conditioning capacitor
KR102475010B1 (en) 2018-05-29 2022-12-07 3디 글래스 솔루션즈 인코포레이티드 Low insertion loss rf transmission line
KR102518025B1 (en) 2018-09-17 2023-04-06 3디 글래스 솔루션즈 인코포레이티드 High efficiency compact slotted antenna with a ground plane
JP7241433B2 (en) 2018-12-28 2023-03-17 スリーディー グラス ソリューションズ，インク Heterogeneous Integration for RF, Microwave and MM Wave Systems on Photoactive Glass Substrates
WO2020139955A1 (en) 2018-12-28 2020-07-02 3D Glass Solutions, Inc. Annular capacitor rf, microwave and mm wave systems
CN210668058U (en) 2019-12-09 2020-06-02 梅州市成就电子科技有限公司 A Broadband Conical Inductor

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5779521A (en) * 1995-03-03 1998-07-14 Sony Corporation Method and apparatus for chemical/mechanical polishing
US7439128B2 (en) * 2003-04-07 2008-10-21 International Business Machines Corporation Method of creating deep trench capacitor using a P+ metal electrode
US20130183805A1 (en) * 2010-09-14 2013-07-18 International Business Machines Corporation High capacitance trench capacitor
US20120161330A1 (en) * 2010-12-22 2012-06-28 Intel Corporation Device packaging with substrates having embedded lines and metal defined pads

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
See also references of EP3903339A4 *

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US11139582B2 (en) 2018-09-17 2021-10-05 3D Glass Solutions, Inc. High efficiency compact slotted antenna with a ground plane
US11270843B2 (en) 2018-12-28 2022-03-08 3D Glass Solutions, Inc. Annular capacitor RF, microwave and MM wave systems
US11594457B2 (en) 2018-12-28 2023-02-28 3D Glass Solutions, Inc. Heterogenous integration for RF, microwave and MM wave systems in photoactive glass substrates
WO2022265783A1 (en) * 2021-06-15 2022-12-22 3D Glass Solutions, Inc. Radio frequency (rf) integrated power-conditioning capacitor

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KR20210060636A (en) 2021-05-26
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US11270843B2 (en) 2022-03-08
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