WO2020140654A1 - 基于梁檐尺寸调整声学谐振器性能的装置和方法 - Google Patents

基于梁檐尺寸调整声学谐振器性能的装置和方法 Download PDF

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WO2020140654A1
WO2020140654A1 PCT/CN2019/121109 CN2019121109W WO2020140654A1 WO 2020140654 A1 WO2020140654 A1 WO 2020140654A1 CN 2019121109 W CN2019121109 W CN 2019121109W WO 2020140654 A1 WO2020140654 A1 WO 2020140654A1
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resonator
width
gap
electromechanical coupling
eaves
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English (en)
French (fr)
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杨清瑞
庞慰
张孟伦
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Tianjin University
ROFS Microsystem Tianjin Co Ltd
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Tianjin University
ROFS Microsystem Tianjin Co Ltd
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    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic elements; Electromechanical resonators
    • H03H9/02—Details
    • H03H9/02007—Details of bulk acoustic wave devices
    • H03H9/02015—Characteristics of piezoelectric layers, e.g. cutting angles
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic elements; Electromechanical resonators
    • H03H9/02—Details
    • H03H9/02007—Details of bulk acoustic wave devices
    • H03H9/02086—Means for compensation or elimination of undesirable effects
    • H03H9/02118—Means for compensation or elimination of undesirable effects of lateral leakage between adjacent resonators
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic elements; Electromechanical resonators
    • H03H9/02—Details
    • H03H9/02007—Details of bulk acoustic wave devices
    • H03H9/02047—Treatment of substrates
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic elements; Electromechanical resonators
    • H03H9/02—Details
    • H03H9/02007—Details of bulk acoustic wave devices
    • H03H9/02157—Dimensional parameters, e.g. ratio between two dimension parameters, length, width or thickness
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic elements; Electromechanical resonators
    • H03H9/02—Details
    • H03H9/05—Holders or supports
    • H03H9/0504—Holders or supports for bulk acoustic wave devices
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic elements; Electromechanical resonators
    • H03H9/15—Constructional features of resonators consisting of piezoelectric or electrostrictive material
    • H03H9/17—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator
    • H03H9/171—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator implemented with thin-film techniques, i.e. of the film bulk acoustic resonator [FBAR] type
    • H03H9/172—Means for mounting on a substrate, i.e. means constituting the material interface confining the waves to a volume
    • H03H9/173—Air-gaps
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic elements; Electromechanical resonators
    • H03H9/46—Filters
    • H03H9/64—Filters using surface acoustic waves
    • H03H9/6423—Means for obtaining a particular transfer characteristic
    • H03H9/6433—Coupled resonator filters
    • H03H9/644—Coupled resonator filters having two acoustic tracks
    • H03H9/6456—Coupled resonator filters having two acoustic tracks being electrically coupled

Definitions

  • Embodiments of the present invention relate to the field of semiconductors, and in particular to a bulk acoustic wave resonator, a filter having the resonator, a control method of bulk acoustic wave resonator performance, particularly effective electromechanical coupling coefficient, and a method having the same Filter or resonator electronic equipment.
  • Bulk acoustic wave filters have the advantages of low insertion loss, high rectangular coefficient, and high power capacity. Therefore, they are widely used in contemporary wireless communication systems and are important components that determine the quality of RF signals entering and leaving the communication system.
  • the quality of the filter is closely related to the performance indicators of the resonator.
  • Bulk acoustic wave resonators generally have two resonance frequencies. The frequency point with the smallest impedance is defined as the series resonance frequency f s , the corresponding impedance is the series impedance R s , and the frequency point with the largest impedance is defined as the parallel resonance frequency f p , and the corresponding impedance is the parallel impedance R p , the effective electromechanical coupling coefficient is defined as To measure the piezoelectric conversion efficiency in the resonator.
  • the series resonance frequency of the resonator determines the center frequency of the filter
  • the effective electromechanical coupling coefficient of the resonator determines the bandwidth and roll-off characteristics of the filter.
  • the series and parallel impedances of the resonator determine the passband insertion loss and Return loss.
  • most of the current structures that increase the resonator R p will cause the effective electromechanical coupling coefficient to decrease. Therefore, how to design the resonator structure size to obtain the overall performance improvement is an important issue in filter design.
  • the performance of the bulk acoustic wave filter is determined by the bulk acoustic wave resonator that constitutes it.
  • the resonance frequency of the bulk acoustic wave resonator determines the operating frequency of the filter
  • the effective electromechanical coupling coefficient determines the filter insertion loss.
  • high-quality filters usually require multiple resonators While the resonator It is determined by its stack thickness, usually all resonators have the same in the whole silicon chip So how to realize the resonator Fine-tuning within a certain small range is an important issue that needs to be solved urgently in the design of high-performance filters.
  • the present invention is proposed to solve at least one aspect of the aforementioned technical problems in the prior art or provide a solution to at least one aspect of the aforementioned technical problems.
  • a bulk acoustic wave resonator including: a substrate; an acoustic mirror; a bottom electrode disposed above the substrate; a top electrode; and a piezoelectric layer disposed above the bottom electrode and the bottom electrode Between the top electrode, where: the overlapping area of the acoustic mirror, bottom electrode, piezoelectric layer and top electrode in the thickness direction of the resonator constitutes the effective area of the resonator; the connection part of the top electrode is provided with a beam structure ,
  • the beam structure includes a first beam portion, the projection of the first beam portion in the thickness direction of the resonator falls within the area of the acoustic mirror, and the gap formed by the first beam portion has a beam gap height and a first beam The gap width.
  • the width of the first beam gap is between 0.75 ⁇ m and 3.5 ⁇ m. Furthermore, the width of the first beam gap is 0.75 ⁇ m to 2 ⁇ m. Further optionally, the width of the first beam gap is about 1 ⁇ m.
  • the beam gap height is within range.
  • the beam structure further includes a second beam portion, a projection of the second beam portion in the thickness direction of the resonator is outside the area of the acoustic mirror and overlaps with the bottom electrode, the second beam portion It has the beam gap height and the second beam gap width. Further optionally, the width of the second beam gap is in the range of 2 ⁇ m-8 ⁇ m.
  • the resonator further includes an eaves structure formed on an edge of one side of the top electrode, the projection of the eaves structure in the thickness direction of the resonator falls into the area of the acoustic mirror, the eaves structure
  • the void formed has a height of eaves and a width of eaves.
  • the width of the eaves gap is different from the width of the first beam gap of the beam structure.
  • the effective electromechanical coupling coefficient of the resonator is in the range of 95%-102% of the effective electromechanical coupling coefficient of the reference resonator. Further, the effective electromechanical coupling coefficient of the resonator is equal to that of the reference resonator The effective electromechanical coupling coefficient is the same.
  • a method for controlling the effective electromechanical coupling coefficient of a bulk acoustic wave resonator includes: a substrate; an acoustic mirror; a bottom electrode disposed above the substrate; a top electrode; and a piezoelectric layer disposed above the bottom electrode and between the bottom electrode and the top electrode, wherein: the acoustic mirror, the bottom electrode , The overlapping area of the piezoelectric layer and the top electrode in the thickness direction of the resonator constitutes the effective area of the resonator; the edge on the side of the top electrode forms an eaves structure, and the projection of the eaves structure along the thickness direction of the resonator falls into the place In the area of the acoustic mirror, the gap formed by the eaves structure has an eaves width; a beam structure is provided at the connection portion of the top electrode, and the beam structure includes a first beam portion and a second beam portion, and the
  • the method includes the step of selecting the width of the eaves gap and the width of the first beam gap so that the effective electromechanical coupling coefficient of the resonator is in the range of 95%-102% of the effective electromechanical coupling coefficient of the reference resonator.
  • the width of the eaves gap and the width of the first beam gap are selected so that the effective electromechanical coupling coefficient of the resonator is the same as the effective electromechanical coupling coefficient of the reference resonator.
  • the method includes selecting a beam gap height and/or eaves gap height.
  • a filter including: a series branch including a plurality of series resonators; a plurality of parallel branches, each parallel branch including at least one parallel resonator, wherein : The effective electromechanical coupling coefficient of the at least one parallel resonator and at least one of the plurality of series resonators is different from the effective electromechanical coupling coefficient of other resonators, the at least one resonator has the above-mentioned first beam Gap width or eaves width. Further, at least two resonators have effective electromechanical coupling coefficients different from each other based on different first beam gap widths or different eaves gap widths. Or the at least two resonators have different effective electromechanical coupling coefficients based on the difference between the first beam gap width and the eaves gap width.
  • a filter including: a series branch including a plurality of series resonators; a plurality of parallel branches, each parallel branch including at least one parallel resonator, wherein : At least one of the at least one parallel resonator and at least one of the plurality of series resonators has the above beam structure and the above eaves structure, and the effective electromechanical coupling coefficient of the at least one resonator refers to that of the resonator The effective electromechanical coupling coefficient is in the range of 95%-102%. Further, the effective electromechanical coupling coefficient of the at least one resonator is the same as the effective electromechanical coupling coefficient of the reference resonator.
  • Embodiments of the present invention also relate to an electronic device, including the above-mentioned filter or resonator.
  • FIG. 1 is a schematic structural diagram of a bulk acoustic wave resonator in the prior art
  • FIG. 2 is an equivalent electromechanical model diagram of the effective area of the bulk acoustic wave resonator in FIG. 1;
  • FIG. 3 is a BVD model of the bulk acoustic wave resonator in FIG. 1;
  • FIG. 4 is a schematic structural diagram of a bulk acoustic wave resonator according to an exemplary embodiment of the present invention.
  • FIG. 5 is a BVD model of the bulk acoustic wave resonator in FIG. 4;
  • FIG. 6 is a diagram of an equivalent electromechanical model of the effective area of the bulk acoustic wave resonator in FIG. 4;
  • FIG. 7 is a schematic structural diagram of a bulk acoustic wave resonator according to an exemplary embodiment of the present invention.
  • FIG. 8 is a diagram of an equivalent electromechanical model of the effective area of the bulk acoustic wave resonator in FIG. 7;
  • FIG. 9 is a BVD model of the bulk acoustic wave resonator in FIG. 7;
  • FIG. 10 is a schematic structural diagram of a bulk acoustic wave resonator according to an exemplary embodiment of the present invention.
  • Figure 11 is a graph of the eaves structure size and the parallel impedance of the bulk acoustic wave resonator under different beam structure sizes (beam gap width), where the horizontal axis is the size of the eave structure and the vertical axis is the parallel impedance value;
  • FIG. 12 is a typical dispersion curve diagram of the laterally propagating S0, S1, A0, and A1 Lamb wave modes existing in a bulk acoustic wave resonator.
  • FIG. 1 is a schematic diagram of the basic structure of a resonator in the prior art.
  • the area C shown in FIG. 1 is the effective area of the resonator, which is composed of a body area B and a critical area A, including a top electrode 500, a piezoelectric layer 400, and a bottom.
  • an alternating current of a specific frequency is applied to the resonator, since the material of the piezoelectric layer 400 has an inverse piezoelectric effect, the electrical energy is converted into mechanical energy, which mainly appears as a piston acoustic wave mode perpendicular to the surface of the piezoelectric layer.
  • the boundary structure of the resonator will significantly affect the performance of the resonator.
  • the boundary area of the effective area of the resonator is different between the top electrode connection side and the non-connection side.
  • the left side indicates the top electrode non-connection side.
  • the right side shows the connection of the top electrode. It can be seen that on the left side of the effective area, the sound wave will propagate through the suspended piezoelectric layer and the bottom electrode to the substrate 100 and the piezoelectric layer 400 above it; while on the right side of the effective area, the sound wave will leak through the A2 area In the high-resistance silicon substrate 100 and the piezoelectric layer 400.
  • the effective area C can be regarded as the effective area B and the critical area A connected in parallel. Its equivalent electromechanical model is shown in Figure 2, and its total capacitance C 1 is:
  • the BVD model of the graph shown in Figure 1 is shown in Figure 3.
  • the series resonance frequency, parallel resonance frequency, and effective electromechanical coupling coefficient are:
  • the top electrode 500 may be processed into a beam structure 700 on the side of the connection side of the top electrode, as shown in FIG. 4.
  • the area B shown in FIG. 4 is the effective area of the resonator and has the first acoustic impedance;
  • A is the distance of the beam structure 700 inside the effective area, and the height of the beam structure 700 from the piezoelectric layer 400 in the effective area is a.
  • the air capacitance of the area A is proportional to the length of the area A. It is known from formula (6): C eq2 is less than C A ; comparing formula (1) and formula (7) shows that C 2 is less than C 1 , that is, the increase in the beam part decreases the resonator capacitance from the reference case.
  • the BVD model of the graph shown in Figure 4 is shown in Figure 5.
  • the series resonance frequency, parallel resonance frequency, and effective electromechanical coupling coefficient are:
  • the introduction of the beam makes the high-order tuned resonator in the A2 area become a smaller equivalent capacitor at the operating frequency of the main resonator, reducing the consumption of acoustic energy, thereby helping to improve the overall effective electromechanical coupling of the resonator coefficient.
  • the present invention proposes a bulk acoustic wave resonator, including:
  • the bottom electrode 300 is arranged above the substrate
  • the piezoelectric layer 400 is disposed above the bottom electrode and between the bottom electrode and the top electrode,
  • the overlapping area of the acoustic mirror 200, the bottom electrode 300, the piezoelectric layer 400 and the top electrode 500 in the thickness direction of the resonator constitutes the effective area B of the resonator;
  • a beam structure 700 is provided at the connection portion of the top electrode, and the beam structure includes a first beam portion, a projection of the first beam portion in the thickness direction of the resonator falls into the area of the acoustic mirror, the first The gap formed by the beam portion has a beam gap height a and a first beam gap width A.
  • the first beam gap width A is between 0.75 ⁇ m and 3.5 ⁇ m.
  • the first beam gap width A is about a quarter of the S1 mode Lamb wave wavelength of the main resonance region at the parallel frequency of the resonator (see FIG. 12); or the first beam gap width A One quarter of the S1 mode lamb wave wavelength of the main resonance region at the parallel frequency of the resonator and one quarter of the S0 mode lamb wave wavelength of the main resonance region at the parallel frequency of the resonator (see Figure 12).
  • the width of the first beam gap is 0.75 ⁇ m to 2 ⁇ m. Furthermore, the width of the first beam gap is about 1 ⁇ m or 2 ⁇ m.
  • FIG. 12 is a typical dispersion curve diagram of the laterally propagating S0, S1, A0, and A1 Lamb wave modes existing in a bulk acoustic wave resonator.
  • the value of the dispersion curve is specifically determined by the laminated structure of the resonator.
  • the vertical axis is the vibration frequency
  • the horizontal axis is the wave number (k)
  • the curve of one mode is called S1 mode, when the vibration frequency is the parallel resonance frequency f p , the corresponding wave number is k p , and the wavelength ⁇ of the S1 mode is defined as the following formula:
  • the beam gap height d is within the range, for example can be Wait.
  • the beam structure 700 further includes a second beam portion (corresponding to part A2 in FIG. 4 ), the projection of the second beam portion in the thickness direction of the resonator is outside the area of the acoustic mirror and Overlapping with the bottom electrode, the second beam portion has the beam gap height d and the second beam gap width A2.
  • the width of the second beam gap is in the range of 2 ⁇ m-8 ⁇ m, for example, it may be 2 ⁇ m, 4 ⁇ m, 6 ⁇ m, 8 ⁇ m, or the like.
  • the top electrode 110 may be processed with an eave structure 600 on the left side, which has a length D and a second acoustic impedance, as shown in FIG. 7.
  • the second acoustic impedance of the eaves structure 600 does not match the first acoustic impedance of the effective area B, thereby improving the reflection ability and conversion ability of the acoustic wave and the suppression of parasitic modes, so that the performance of the resonator is increased and its R P value is further increased increase.
  • the eaves structure can adjust the capacitance of the resonator.
  • the increase of the beam will increase the effective electromechanical coupling coefficient, and the increase of the eaves will reduce the effective electromechanical coupling coefficient, so when the other parameters of the resonator are fixed, the width and the area A of the first beam can be adjusted by adjusting The width of the area D of the eaves structure keeps the effective electromechanical coupling coefficient of the resonator basically unchanged.
  • the void has an eaves height d and an eaves width D.
  • the width of the eaves may be in the range of 0.5 ⁇ m-7 ⁇ m, such as 0.5 ⁇ m, 4 ⁇ m, 5 ⁇ m, 7 ⁇ m, and so on.
  • the height of the eaves gap may be the same as the height of the beam gap.
  • the width A of the first beam portion and the width D of the eaves also affect the height of R p .
  • the width of the eaves changes from 0.5 ⁇ m to 5 ⁇ m, with the width of the beam Increasing, when changing from 0.5 ⁇ m to 3 ⁇ m, the R p of the resonator will rise first and then fall.
  • the width of the effective area A of the beam is 1 ⁇ m, the R p value of the resonator with the same eave size is the highest.
  • the eaves size is 0.75 ⁇ m, 1.75 ⁇ m, 3 ⁇ m, 3.75 ⁇ m, an optimal solution with a higher global R p will be generated. It can be seen that by optimizing the combination of beam eaves size instead of limiting the equal size of beam eaves, the performance of the resonator will be further improved, and the effective electromechanical coupling coefficient can be basically unchanged.
  • the optional width of the beam structure is between 0.75 ⁇ m and 3.5 ⁇ m.
  • FIG. 10 is a schematic structural diagram of a bulk acoustic wave resonator according to an exemplary embodiment of the present invention.
  • the resonator has a substrate 100, an acoustic mirror 200, a bottom electrode 300, a piezoelectric layer 400, a top electrode 500, an eaves structure 600, and a beam structure 700.
  • the area shown in B is the effective area of the resonator.
  • the beam structure 700 has a first beam portion (corresponding to the area where A in FIG.
  • the beam structure 700 forms a beam gap BA
  • the eave structure 600 has an eaves gap WA
  • the height of the eaves gap is d
  • the beam gap The height is a
  • the width of the eaves is D
  • the width of the first beam portion of the beam gap is A.
  • the effective electromechanical coupling coefficient of the resonator provided with the eaves structure and the beam structure can be selected by selecting the size of the eaves gap (eg, eaves width) and the size of the first beam gap (eg, first beam gap width) In the range of 95%-102% of the effective electromechanical coupling coefficient of the reference resonator (compared to the resonator provided with the eaves structure and beam structure, except for the eaves structure and beam structure), such as 95%, 99%, 100%, 102%, etc.
  • the effective electromechanical coupling coefficient and reference of the resonator provided with the eaves structure and the beam structure can also be selected by selecting the size of the eaves gap (for example, the width of the eaves gap) and the size of the first beam gap (for example, the first beam gap width)
  • the effective electromechanical coupling coefficient of the resonator (compared to the resonator provided with the eaves structure and the beam structure, except for the eaves structure and the beam structure) is different.
  • the effective electromechanical coupling coefficient of the resonator provided with the beam structure and the reference resonator (with the resonance provided with the beam structure) can also be selected only by selecting the size of the first beam gap (eg, the width of the first beam gap). Compared with the beam, except for the beam structure, the effective electromechanical coupling coefficients are completely different.
  • the present invention also proposes a method for controlling the effective electromechanical coupling coefficient of a bulk acoustic wave resonator, including the steps of: selecting the width of the eaves gap and the width of the first beam gap so that the effective electromechanical coupling of the resonator The coefficient is in the range of 95%-102% of the effective electromechanical coupling coefficient of the reference resonator.
  • the width of the eaves gap and the width of the first beam gap are selected so that the effective electromechanical coupling coefficient of the resonator is the same as the effective electromechanical coupling coefficient of the reference resonator.
  • the height of the beam gap and/or the height of the eaves gap can also be selected to adjust the effective electromechanical coupling coefficient.
  • the present invention also proposes a filter, including: a series branch, including a plurality of series resonators; a plurality of parallel branches, each parallel branch includes at least one parallel resonator, wherein: the at least one The effective electromechanical coupling coefficient of at least one resonator of the parallel resonator and the plurality of series resonators is different from the effective electromechanical coupling coefficient of other resonators, and the at least one resonator is provided with the beam structure described above.
  • At least two resonators of the parallel resonator and the plurality of series resonators are provided with the above beam structure and eaves structure, and the at least two resonators are based on the first beam gap
  • the width is different from the width of the eaves and has different effective electromechanical coupling coefficients from each other.
  • At least two resonators of the parallel resonator and the plurality of series resonators are provided with the above-mentioned beam structure and eaves structure, and the at least two resonators are based on the first beam
  • the gap width is different from the eaves width and has different effective electromechanical coupling coefficients from each other.
  • the invention also proposes a filter, including: a series branch, including a plurality of series resonators; a plurality of parallel branches, each parallel branch including at least one parallel resonator, wherein: the at least one parallel resonator And at least one resonator of the plurality of series resonators includes the eaves structure and the beam structure described above, and the effective electromechanical coupling coefficient of the at least one resonator is 95%-102% of the effective electromechanical coupling coefficient of the reference resonator In the range.
  • the effective electromechanical coupling coefficient of the at least one resonator is the same as the effective electromechanical coupling coefficient of the reference resonator.
  • the electrode composition material may be gold (Au), tungsten (W), molybdenum (Mo), platinum (Pt), ruthenium (Ru), iridium (Ir), titanium tungsten (TiW), aluminum (Al) , Titanium (Ti), osmium (Os), magnesium (Mg), gold (Au), tungsten (W), molybdenum (Mo), platinum (Pt), ruthenium (Ru), iridium (Ir), germanium (Ge) , Copper (Cu), aluminum (Al), chromium (Cr), arsenic doped gold and other similar metals.
  • the piezoelectric layer material may be aluminum nitride (AlN), doped aluminum nitride (doped ALN) zinc oxide (ZnO), lead zirconate titanate (PZT), lithium niobate (LiNbO 3 ), quartz (Quartz), potassium niobate (KNbO 3 ) or lithium tantalate (LiTaO 3 ) and other materials, in which the doped ALN contains at least one rare earth element, such as scandium (Sc), yttrium (Y), magnesium (Mg), titanium (Ti), lanthanum (La), cerium (Ce), praseodymium (Pr), neodymium (Nd), promethium (Pm), samarium (Sm), europium (Eu), gadolinium (Gd), terbium (Tb), dysprosium (Dy), holmium (Ho), erbium (Er), thulium (AlN
  • the base material includes but is not limited to: single crystal silicon (Si), gallium arsenide (GaAs), sapphire, quartz, and the like.
  • Embodiments of the present invention also relate to an electronic device, including the above-mentioned filter or resonator.
  • the electronic devices here include but are not limited to intermediate products such as radio frequency front-ends, filter amplification modules, and terminal products such as mobile phones, WIFI, and drones.

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Abstract

一种体声波谐振器，包括：基底（100）；声学镜（200）；底电极（300），设置在基底（100）上方；顶电极（500）；和压电层（400），设置在底电极（300）上方以及底电极（300）与顶电极（500）之间，其中：声学镜（200）、底电极（300）、压电层（400）和顶电极（500）在谐振器厚度方向上的重叠区域构成谐振器的有效区域（B）；顶电极（500）一侧的边缘形成檐结构（600），檐结构（600）沿谐振器的厚度方向的投影落入声学镜（200）的区域内；顶电极（500）的连接部分处设置有梁结构（700），梁结构（700）包括第一和第二梁部，第一梁部在谐振器的厚度方向的投影落入声学镜（200）的区域内，第一梁部形成的空隙具有第一梁隙宽度（A），第二梁部在谐振器的厚度方向的投影处于声学镜（200）的区域之外且与底电极（300）重叠，第二梁部具有第二梁隙宽度（A2）；且谐振器的有效机电耦合系数与参照谐振器的有效机电耦合系数95％-102％的范围内。

Description

基于梁檐尺寸调整声学谐振器性能的装置和方法 技术领域
本发明的实施例涉及半导体领域，尤其涉及一种体声波谐振器，一种具有该谐振器的滤波器，一种体声波谐振器性能特别是有效机电耦合系数的控制方法，以及一种具有该滤波器或谐振器的电子设备。
背景技术
体声波滤波器具有低插入损耗、高矩形系数、高功率容量等优点，因此，被广泛应用在当代无线通讯系统中，是决定射频信号进出通讯系统质量的重要元器件。
而滤波器的好坏与谐振器的各项性能指标息息相关。体声波谐振器一般具有两个谐振频率，定义阻抗最小的频率点为串联谐振频率f s，相应阻抗为串联阻抗R s，定义阻抗最大的频率点为并联谐振频率f p，相应阻抗为并联阻抗R p，定义有效机电耦合系数近似为
Figure PCTCN2019121109-appb-000001
来衡量谐振器中压电转换效率。通常，谐振器的串联谐振频率决定了滤波器的中心频率，而谐振器的有效机电耦合系数决定了滤波器的带宽以及滚降特性，谐振器的串联阻抗和并联阻抗决定了通带插入损耗及回波损耗。一般而言，谐振器的R p越高，R s越低，相应滤波器的通带插入损耗越好。对于特定滤波器设计，通常希望能够提高谐振器的R p，同时保证谐振器的有效机电耦合系数基本不变。而当前大多数提高谐振器R p的结构均会导致有效机电耦合系数下降，因此，如何设计谐振器结构尺寸来获得整体性能提升是滤波器设计中一个重要的问题。
此外，体声波滤波器的性能由构成它的体声波谐振器决定，如：体声波谐振器的谐振频率决定了滤波器的工作频率，有效机电耦合系数
Figure PCTCN2019121109-appb-000002
决定了滤波器的带宽和滚降，品质因数决定滤波器插入损耗。在频带资源越来越紧俏的时代中，高品质滤波器通常需要谐振器具备多种
Figure PCTCN2019121109-appb-000003
而谐振器的
Figure PCTCN2019121109-appb-000004
是由其层叠厚度决定的，通常在整片硅片内所有谐振器具有相同的
Figure PCTCN2019121109-appb-000005
因此如何实现谐振器的
Figure PCTCN2019121109-appb-000006
在一定小范围内微调是高性能滤波器设计急需解决的一个重要问题。
发明内容
为解决现有技术中的上述技术问题的至少一个方面或者提供解决上述技术问题 的至少一个方面的途径，提出本发明。
根据本发明的实施例的一个方面，提出了一种体声波谐振器，包括：基底；声学镜；底电极，设置在基底上方；顶电极；和压电层，设置在底电极上方以及底电极与顶电极之间，其中：所述声学镜、底电极、压电层和顶电极在谐振器厚度方向上的重叠区域构成谐振器的有效区域；所述顶电极的连接部分处设置有梁结构，所述梁结构包括第一梁部，所述第一梁部在谐振器的厚度方向的投影落入所述声学镜的区域内，第一梁部形成的空隙具有梁隙高度和第一梁隙宽度。
可选的，所述第一梁隙宽度在0.75μm到3.5μm之间。更进一步的，所述第一梁隙宽度为0.75μm到2μm，进一步可选的，所述第一梁隙宽度约为1μm。
可选的，所述梁隙高度在
Figure PCTCN2019121109-appb-000007
范围内。
可选的，所述梁结构还包括第二梁部，所述第二梁部在谐振器的厚度方向的投影处于声学镜的区域之外且与所述底电极重叠，所述第二梁部具有所述梁隙高度和第二梁隙宽度。进一步可选的，所述第二梁隙宽度在2μm-8μm范围内。
可选的，所述谐振器还包括在所述顶电极一侧的边缘形成的檐结构，所述檐结构沿谐振器的厚度方向的投影落入所述声学镜的区域内，所述檐结构形成的空隙具有檐隙高度和檐隙宽度。可选的，所述檐隙宽度不同于所述梁结构的第一梁隙宽度。
可选的，所述谐振器的有效机电耦合系数在参照谐振器的有效机电耦合系数的95％-102％的范围内，更进一步的，所述谐振器的有效机电耦合系数与参照谐振器的有效机电耦合系数相同。
根据本发明的实施例的再一方面，提出了一种体声波谐振器的有效机电耦合系数的控制方法。所述谐振器包括：基底；声学镜；底电极，设置在基底上方；顶电极；和压电层，设置在底电极上方以及底电极与顶电极之间，其中：所述声学镜、底电极、压电层和顶电极在谐振器厚度方向上的重叠区域构成谐振器的有效区域；所述顶电极一侧的边缘形成檐结构，所述檐结构沿谐振器的厚度方向的投影落入所述声学镜的区域内，所述檐结构形成的空隙具有檐隙宽度；所述顶电极的连接部分处设置有梁结构，所述梁结构包括第一梁部和第二梁部，所述第一梁部在谐振器的厚度方向的投影落入所述声学镜的区域内，第一梁部形成的空隙具有第一梁隙宽度，所述第二梁部在谐振器的厚度方向的投影处于声学镜的区域之外且与所述底电极重叠。所述方法包括步骤：选择所述檐隙宽度和所述第一梁隙宽度，使得所述谐振器的有效机电耦合系数在参照谐振器的有效机电耦合系数的95％-102％的范围内。可选的，选择所述檐隙宽度和所述 第一梁隙宽度，使得所述谐振器的有效机电耦合系数与参照谐振器的有效机电耦合系数相同。可选的，所述方法包括选择梁隙高度和/或檐隙高度。
根据本发明的实施例的还一方面，提出了一种滤波器，包括：串联支路，包括多个串联谐振器；多个并联支路，每个并联支路包括至少一个并联谐振器，其中：所述至少一个并联谐振器和所述多个串联谐振器中的至少一个谐振器的有效机电耦合系数不同于其他谐振器的有效机电耦合系数，所述至少一个谐振器具有上述的第一梁隙宽度或者檐隙宽度。进一步的，至少两个谐振器基于所述第一梁隙宽度不同或所述檐隙宽度不同，而具有彼此不同的有效机电耦合系数。或者所述至少两个谐振器基于所述第一梁隙宽度与所述檐隙宽度不同，而具有彼此不同的有效机电耦合系数。
根据本发明的实施例的再一方面，提出了一种滤波器，包括：串联支路，包括多个串联谐振器；多个并联支路，每个并联支路包括至少一个并联谐振器，其中：所述至少一个并联谐振器和所述多个串联谐振器中的至少一个谐振器具有上述的梁结构和上述的檐结构，且所述至少一个谐振器的有效机电耦合系数在参照谐振器的有效机电耦合系数的95％-102％的范围内。进一步的，所述至少一个谐振器的有效机电耦合系数与参照谐振器的有效机电耦合系数相同。
本发明的实施例还涉及一种电子设备，包括上述的滤波器或者谐振器。
附图说明
以下描述与附图可以更好地帮助理解本发明所公布的各种实施例中的这些和其他特点、优点，图中相同的附图标记始终表示相同的部件，其中：
图1为现有技术中的体声波谐振器的结构示意图；
图2为图1中的体声波谐振器的有效区域的等效机电模型图；
图3为图1中的体声波谐振器的BVD模型；
图4为根据本发明的一个示例性实施例的体声波谐振器的结构示意图；
图5为图4中的体声波谐振器的BVD模型；
图6为图4中的体声波谐振器的有效区域的等效机电模型图；
图7为根据本发明的一个示例性实施例的体声波谐振器的结构示意图；
图8为图7中的体声波谐振器的有效区域的等效机电模型图；
图9为图7中的体声波谐振器的BVD模型；
图10为根据本发明的一个示例性实施例的体声波谐振器的结构示意图；
图11为不同的梁结构尺寸(梁隙宽度)情况下，檐结构尺寸与体声波谐振器的并联阻抗的曲线图，其中，横轴为檐结构的尺寸，纵轴为并联阻抗值；
图12为体声波谐振器中存在的横向传播的S0、S1、A0、A1四种兰姆波模式的典型色散曲线图。
具体实施方式
下面通过实施例，并结合附图，对本发明的技术方案作进一步具体的说明。在说明书中，相同或相似的附图标号指示相同或相似的部件。下述参照附图对本发明实施方式的说明旨在对本发明的总体发明构思进行解释，而不应当理解为对本发明的一种限制。
图1为现有技术中的谐振器的基本结构示意图，图1中C所示区域为谐振器的有效区域，由主体区域B和临界区域A组成，含顶电极500、压电层400、底电极300、声学镜200和高阻硅基底100。当给谐振器施加特定频率的交流电时，因压电层400材料具有逆压电效应，电能会转换成机械能，此机械能主要表现为与压电层表面垂直的活塞声波模式。而谐振器的边界结构会显著影响谐振器性能，具体来看，谐振器有效区域在顶电极连接边和非连接边的边界情况不同，在图1中，左侧表示顶电极非连接边情况，右侧表示顶电极连接边情况。可以看到，在有效区域的左侧，声波会通过悬空的压电层和底电极传播到基底100及其上方的压电层400中；而在有效区域右侧，声波会通过A2区域泄露到高阻硅基底100和压电层400中。而在区域A2中，由于压电层上下均有电极，因此形成了一个同频率的高次调谐型体声波谐振器，从而会消耗更多的声波能量。声能的泄露会导致器件的并联阻抗R P降低、有效机电耦合系数
Figure PCTCN2019121109-appb-000008
降低，最终造成器件的整体性能降低。
有效区域C可认为是有效区域B与临界区域A并联而成，其等效机电模型如图2所示，其总电容C 1为：
C 1＝C B+C A        (1)
图1所示图形的BVD模型如图3所示，其串联谐振频率、并联谐振频率、有效机电耦合系数分别为：
Figure PCTCN2019121109-appb-000009
Figure PCTCN2019121109-appb-000010
Figure PCTCN2019121109-appb-000011
为改善器件有效区域右侧的性能，可将顶电极500在顶电极的连接边一侧加工成梁结构700，如图4所示。图4中B所示区域为谐振器的有效区域，具有第一声阻抗；A为梁结构700在有效区域内部的距离，有效区域内梁结构700距离压电层400的高度为a。
有效区域B与梁结构700的在区域A的部分(对应于第一梁部)的等效机电模型如图6所示，C B为B区域的电容。C eq2为腔BA的电容C air与压电层400材料的电容C A串联而成。各公式为：
Figure PCTCN2019121109-appb-000012
Figure PCTCN2019121109-appb-000013
C 2＝C B+C eq2        (7)
通过公式(5)得知：区域A的空气电容与区域A的长度成正比。由公式(6)得知：C eq2小于C A；对比公式(1)和公式(7)得知：C 2小于C 1，即梁部增加使谐振器电容较基准情况降低。
图4所示图形的BVD模型如图5所示，其串联谐振频率、并联谐振频率、有效机电耦合系数分别为：
Figure PCTCN2019121109-appb-000014
Figure PCTCN2019121109-appb-000015
Figure PCTCN2019121109-appb-000016
对比公式(2)和公式(8)可知，梁部的增加不改变谐振器的串联谐振频率。对比公式(3)和公式(9)可知，因C 1大于C 2，可知ω P小于ω P,2，即梁部的增加使谐振器的并联谐振频率增大。对于公式(4)和(10)可知，
Figure PCTCN2019121109-appb-000017
小于
Figure PCTCN2019121109-appb-000018
即梁部的增加使谐振器的有效机电耦合系数增大。而梁的引入又使得A2区域的高次调谐型谐振器在主谐振器工作频率变成一个较小的等效电容，减少了声波能量的消耗，从而有助于提高谐振器的整体有效机电耦合系数。
基于以上，本发明提出了一种体声波谐振器，包括：
基底100；
声学镜200；
底电极300，设置在基底上方；
顶电极500；和
压电层400，设置在底电极上方以及底电极与顶电极之间，
其中：
所述声学镜200、底电极300、压电层400和顶电极500在谐振器厚度方向上的重叠区域构成谐振器的有效区域B；
所述顶电极的连接部分处设置有梁结构700，所述梁结构包括第一梁部，所述第一梁部在谐振器的厚度方向的投影落入所述声学镜的区域内，第一梁部形成的空隙具有梁隙高度a和第一梁隙宽度A。
在可选的实施例中，所述第一梁隙宽度A在0.75μm到3.5μm之间。或者，所述第一梁隙宽度A约为所述谐振器的并联频率处主谐振区域的S1模式兰姆波波长的四分之一(参见图12)；或者所述第一梁隙宽度A在所述谐振器的并联频率处主谐振区域的S1模式兰姆波波长的四分之一与所述谐振器的并联频率处主谐振区域的S0模式兰姆波波长的四分之一(参见图12)之间。
进一步的实施例中，所述第一梁隙宽度为0.75μm到2μm。更进一步的，所述第一梁隙宽度约为1μm或2μm。
在体声波谐振器工作时，三明治结构中会产生大量的振动，若将这些振动按照其频率(f)和波数(k)的关系绘制成色散曲线，则可获得多种模式的曲线。图12是体声波谐振器中存在的横向传播的S0、S1、A0、A1四种兰姆波模式的典型色散曲线图，该色散曲线的数值由谐振器的层叠结构具体决定。其纵轴为振动频率，横轴为波数(k)，相应的波长为λ＝2π/k。如图12所示，其中1种模式的曲线称为S1模式，振动频率为并联谐振频率f p时，对应的波数为k p，而S1模式的波长λ定义为下式：
Figure PCTCN2019121109-appb-000019
在可选的实施例中，所述梁隙高度d在
Figure PCTCN2019121109-appb-000020
范围内，例如可以为
Figure PCTCN2019121109-appb-000021
Figure PCTCN2019121109-appb-000022
等。
如图4所示，所述梁结构700还包括第二梁部(对应于图4中的A2部分)，所述第二梁部在谐振器的厚度方向的投影处于声学镜的区域之外且与所述底电极重叠，所述第二梁部具有所述梁隙高度d和第二梁隙宽度A2。可选的，所述第二梁隙宽度在2μm-8μm范围内，例如可以为2μm、4μm、6μm、8μm等。
为改善声波在有效区域左侧的声波泄露情况，可将顶电极110在左侧加工一种檐结构600，其长度为D，具有第二声阻抗，如图7所示。檐结构600所具有第二声阻抗与有效区域B的第一声阻抗不匹配，从而提升声波的反射能力和转换能力以及对寄生模式的抑制作用，使得谐振器的性能增加，其R P值进一步增加。除此之外，檐结构还能调整谐振器的电容。
图7中的有效区域B的等效机电模型如图8所示，C B为有效区域B的电容，C eq3为腔WA的电容C air3与压电层400材料的电容C D串联而成。各公式为：
Figure PCTCN2019121109-appb-000023
Figure PCTCN2019121109-appb-000024
C 3＝C B+C A+C eq3        (13)
对比公式(1)和公式(13)得知：C 3大于C 1，即檐部增加使谐振器电容较基准情况增加。
图7所示图形的BVD模型如图9所示，其串联谐振频率、并联谐振频率、有效机电耦合系数分别为：
Figure PCTCN2019121109-appb-000025
Figure PCTCN2019121109-appb-000026
Figure PCTCN2019121109-appb-000027
对比公式(2)和公式(14)可知，檐部的增加不改变谐振器的串联谐振频率。对比公式(3)和公式(15)可知，因C 1小于C 3，可知ω P大于ω P,3，即檐部的增加使谐振器的并联谐振频率减小。
对于公式(4)和(16)可知，
Figure PCTCN2019121109-appb-000028
大于
Figure PCTCN2019121109-appb-000029
即檐部的增加使谐振器的有效机电耦合系数减小。
由上可知，梁的增加会使有效机电耦合系数增加，而檐的增加会使有效机电耦合系数减小，故当谐振器的其他参数一定，可通过调整第一梁部的区域A的宽度和檐结构的区域D的宽度，使谐振器的有效机电耦合系数基本保持不变。
如图7所示，在所述顶电极一侧的边缘形成的檐结构600，所述檐结构600沿谐振器的厚度方向的投影落入所述声学镜的区域内，所述檐结构形成的空隙具有檐隙高度d和檐隙宽度D。所述檐隙宽度可在0.5μm-7μm范围内，例如0.5μm、4μm、 5μm、7μm等。所述檐隙高度可与梁隙高度相同。
另一方面，第一梁部的宽度A和檐隙宽度D还会影响R p的高低。对于某一特定膜层厚度组合，通过仿真不同梁檐结构尺寸的组合，从仿真结果(如图10所示)可以看到，当檐的宽度从0.5μm变化至5μm时，随着梁的宽度增加，从0.5μm变化到3μm时，谐振器的R p会有一个先上升后下降的现象，当梁的有效区域A的宽度为1μm时，相同檐尺寸的谐振器的R p值均最高。进一步，当梁有效区域尺寸A为1μm，檐尺寸为0.75μm，1.75μm，3μm，3.75μm时，会产生全局R p较高的最优解。可见，通过优化梁檐尺寸的组合而不是限定梁檐尺寸相等，会进一步提高谐振器性能，可保证有效机电耦合系数基本不变。而对于不同厚度的膜层组合情况，梁结构的可选宽度在0.75μm到3.5μm之间，进一步的，在0.75μm到2μm之间，约为并联频率f p处主谐振区域S1模式兰姆波波长的四分之一，或介于并联频率f p处主谐振区域S1模式兰姆波波长的四分之一和并联频率f p处主谐振区域S0模式兰姆波波长的四分之一之间。
图10为根据本发明的一个示例性实施例的体声波谐振器的结构示意图。如图10所示，该谐振器具有基底100、声学镜200、底电极300、压电层400、顶电极500、檐结构600、梁结构700，B所示区域为谐振器的有效区域。在图10中，梁结构700具有第一梁部(对应于图10中的A所在区域)，梁结构700形成梁隙BA，檐结构600具有檐隙WA，檐隙的高度为d，梁隙的高度为a，檐隙的宽度为D，梁隙的第一梁部的宽度为A。
在本发明中，可以通过选择檐隙的尺寸(例如檐隙宽度)和第一梁隙的尺寸(例如第一梁隙宽度)，使得设置有檐结构和梁结构的谐振器的有效机电耦合系数在参照谐振器(与设置有檐结构和梁结构的谐振器相比，除了设置檐结构和梁结构之外，其他完全相同)的有效机电耦合系数的95％-102％的范围内，例如为95％、99％、100％、102％等。当然，也可以通过选择檐隙的尺寸(例如檐隙宽度)和第一梁隙的尺寸(例如第一梁隙宽度)，使得设置有檐结构和梁结构的谐振器的有效机电耦合系数与参照谐振器(与设置有檐结构和梁结构的谐振器相比，除了设置檐结构和梁结构之外，其他完全相同)的有效机电耦合系数不同。
在本发明中，也可以仅仅通过选择第一梁隙的尺寸(例如第一梁隙宽度)，使得设置有梁结构的谐振器的有效机电耦合系数与参照谐振器(与设置有梁结构的谐振器相比，除了设置梁结构之外，其他完全相同)的有效机电耦合系数不同。
基于以上，本发明也提出了一种体声波谐振器的有效机电耦合系数的控制方法，包括步骤：选择所述檐隙宽度和所述第一梁隙宽度，使得所述谐振器的有效机电耦合系数在参照谐振器的有效机电耦合系数的95％-102％的范围内。可选的，选择所述檐隙宽度和所述第一梁隙宽度，使得所述谐振器的有效机电耦合系数与参照谐振器的有效机电耦合系数相同。可选的，还可选择梁隙高度和/或檐隙高度来调整有效机电耦合系数。
相应的，本发明也提出了一种滤波器，包括：串联支路，包括多个串联谐振器；多个并联支路，每个并联支路包括至少一个并联谐振器，其中：所述至少一个并联谐振器和所述多个串联谐振器中的至少一个谐振器的有效机电耦合系数不同于其他谐振器的有效机电耦合系数，所述至少一个谐振器设置有上述的梁结构。
可选的，所述并联谐振器和所述多个串联谐振器中的至少两个谐振器均设置有上述的梁结构和檐结构，且所述至少两个谐振器基于所述第一梁隙宽度与所述檐隙宽度不同，而具有彼此不同的有效机电耦合系数。
或者可选的，所述并联谐振器和所述多个串联谐振器中的至少两个谐振器均设置有上述的梁结构和檐结构，且所述至少两个谐振器基于所述第一梁隙宽度与所述檐隙宽度不同，而具有彼此不同的有效机电耦合系数。
本发明也提出了一种滤波器，包括：串联支路，包括多个串联谐振器；多个并联支路，每个并联支路包括至少一个并联谐振器，其中：所述至少一个并联谐振器和所述多个串联谐振器中的至少一个谐振器包括上述的檐结构和梁结构，且所述至少一个谐振器的有效机电耦合系数在参照谐振器的有效机电耦合系数的95％-102％的范围内。可选的，所述至少一个谐振器的有效机电耦合系数与参照谐振器的有效机电耦合系数相同。
下面示例性的简单说明根据本发明的体声波谐振器的部件的材料。
在本发明中，电极组成材料可以是金(Au)、钨(W)、钼(Mo)、铂(Pt)，钌(Ru)、铱(Ir)、钛钨(TiW)、铝(Al)、钛(Ti)、锇(Os)、镁(Mg)、金(Au)、钨(W)、钼(Mo)、铂(Pt)、钌(Ru)、铱(Ir)、锗(Ge)、铜(Cu)、铝(Al)、铬(Cr)、砷掺杂金等类似金属形成。
在本发明中，压电层材料可以为氮化铝(AlN)、掺杂氮化铝(doped ALN)氧化锌(ZnO)、锆钛酸铅(PZT)、铌酸锂(LiNbO 3)、石英(Quartz)、铌酸钾(KNbO 3)或钽酸锂(LiTaO 3)等材料，其中掺杂ALN至少含一种稀土元素，如钪(Sc)、钇(Y)、镁(Mg)、 钛(Ti)、镧(La)、铈(Ce)、镨(Pr)、钕(Nd)、钷(Pm)、钐(Sm)、铕(Eu)、钆(Gd)、铽(Tb)、镝(Dy)、钬(Ho)、铒(Er)、铥(Tm)、镱(Yb)、镥(Lu)等。
在本发明中，基底材料包括但不限于：单晶硅(Si)，砷化镓(GaAs)，蓝宝石，石英等。
本发明的实施例也涉及一种电子设备，包括上述的滤波器或者谐振器。需要指出的是，这里的电子设备，包括但不限于射频前端、滤波放大模块等中间产品，以及手机、WIFI、无人机等终端产品。
尽管已经示出和描述了本发明的实施例，对于本领域的普通技术人员而言，可以理解在不脱离本发明的原理和精神的情况下可以对这些实施例进行变化，本发明的范围由所附权利要求及其等同物限定。
Figure PCTCN2019121109-appb-000030

Claims (22)

  1. 一种体声波谐振器，包括：
    基底；
    声学镜；
    底电极，设置在基底上方；
    顶电极；和
    压电层，设置在底电极上方以及底电极与顶电极之间，
    其中：
    所述声学镜、底电极、压电层和顶电极在谐振器厚度方向上的重叠区域构成谐振器的有效区域；
    所述顶电极的连接部分处设置有梁结构，所述梁结构包括第一梁部，所述第一梁部在谐振器的厚度方向的投影落入所述声学镜的区域内，第一梁部形成的空隙具有梁隙高度和第一梁隙宽度。
  2. 根据权利要求1所述的谐振器，其中：
    所述第一梁隙宽度在0.75μm到3.5μm之间。
  3. 根据权利要求2所述的谐振器，其中：
    所述第一梁隙宽度为0.75μm到2μm。
  4. 根据权利要求3所述的谐振器，其中：
    所述第一梁隙宽度约为1μm或2μm。
  5. 根据权利要求2-4中任一项所述的谐振器，其中：
    所述梁隙高度在
    Figure PCTCN2019121109-appb-100001
    范围内。
  6. 根据权利要求1所述的谐振器，其中：
    所述梁结构还包括第二梁部，所述第二梁部在谐振器的厚度方向的投影处于声学镜的区域之外且与所述底电极重叠，所述第二梁部具有所述梁隙高度和第二梁隙宽度。
  7. 根据权利要求6所述的谐振器，其中：
    所述第二梁隙宽度在2μm-8μm范围内。
  8. 根据权利要求1-7中任一项所述的谐振器，还包括：
    在所述顶电极一侧的边缘形成的檐结构，所述檐结构沿谐振器的厚度方向的投影落入所述声学镜的区域内，所述檐结构形成的空隙具有檐隙高度和檐隙宽度。
  9. 根据权利要求8所述的谐振器，其中：
    所述檐隙宽度在0.5μm-7μm范围内。
  10. 根据权利要求9所述的谐振器，其中：
    所述檐隙高度在
    Figure PCTCN2019121109-appb-100002
    范围内。
  11. 根据权利要求8-10中任一项所述的谐振器，其中：
    所述檐隙宽度不同于所述梁结构的第一梁隙宽度。
  12. 根据权利要求8-11中任一项所述的谐振器，其中：
    所述谐振器的有效机电耦合系数在参照谐振器的有效机电耦合系数的95％-102％的范围内。
  13. 根据权利要求12所述的谐振器，其中：
    所述谐振器的有效机电耦合系数与参照谐振器的有效机电耦合系数相同。
  14. 一种体声波谐振器的有效机电耦合系数的控制方法，其中：
    所述谐振器为根据权利要求8-11中任一项所述的谐振器；
    所述方法包括步骤：选择所述檐隙宽度和所述第一梁隙宽度，使得所述谐振器的有效机电耦合系数在参照谐振器的有效机电耦合系数的95％-102％的范围内。
  15. 根据权利要求14所述的方法，其中：
    选择所述檐隙宽度和所述第一梁隙宽度，使得所述谐振器的有效机电耦合系数与参照谐振器的有效机电耦合系数相同。
  16. 根据权利要求14或15所述的方法，其中：
    所述方法包括选择梁隙高度和/或檐隙高度。
  17. 一种滤波器，包括：
    串联支路，包括多个串联谐振器；
    多个并联支路，每个并联支路包括至少一个并联谐振器，
    其中：
    所述至少一个并联谐振器和所述多个串联谐振器中的至少一个谐振器的有效机电耦合系数不同于其他谐振器的有效机电耦合系数，所述至少一个谐振器为根据权利要求1-13中任一项所述的体声波谐振器。
  18. 根据权利要求17所述的滤波器，其中：
    所述并联谐振器和所述多个串联谐振器中的至少两个谐振器为根据权利要求8-11中任一项所述的谐振器，且所述至少两个谐振器基于所述第一梁隙宽度与所述檐 隙宽度不同，而具有彼此不同的有效机电耦合系数。
  19. 根据权利要求17所述的滤波器，其中：
    所述并联谐振器和所述多个串联谐振器中的至少两个谐振器为根据权利要求8-11中任一项所述的谐振器，且所述至少两个谐振器基于所述第一梁隙宽度不同或者所述檐隙宽度不同，而具有彼此不同的有效机电耦合系数。
  20. 一种滤波器，包括：
    串联支路，包括多个串联谐振器；
    多个并联支路，每个并联支路包括至少一个并联谐振器，
    其中：
    所述至少一个并联谐振器和所述多个串联谐振器中的至少一个谐振器为根据权利要求12所述的体声波谐振器。
  21. 根据权利要求20所述的滤波器，其中：
    所述至少一个谐振器的有效机电耦合系数与参照谐振器的有效机电耦合系数相同。
  22. 一种电子设备，包括根据权利要求17-21中任一项所述的滤波器或者根据权利要求1-13中任一项所述的体声波谐振器。
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