WO2020156257A1 - 指纹识别模组及其制作方法和电子装置 - Google Patents

指纹识别模组及其制作方法和电子装置 Download PDF

Info

Publication number
WO2020156257A1
WO2020156257A1 PCT/CN2020/072849 CN2020072849W WO2020156257A1 WO 2020156257 A1 WO2020156257 A1 WO 2020156257A1 CN 2020072849 W CN2020072849 W CN 2020072849W WO 2020156257 A1 WO2020156257 A1 WO 2020156257A1
Authority
WO
WIPO (PCT)
Prior art keywords
piezoelectric material
material layer
layer
functional substrate
auxiliary structure
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/CN2020/072849
Other languages
English (en)
French (fr)
Inventor
刘文渠
李秀锋
姚琪
张锋
董立文
崔钊
徐传祥
孟德天
宋晓欣
王利波
岳阳
侯东飞
吕志军
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
BOE Technology Group Co Ltd
Original Assignee
BOE Technology Group Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by BOE Technology Group Co Ltd filed Critical BOE Technology Group Co Ltd
Priority to JP2020564385A priority Critical patent/JP7456943B2/ja
Priority to EP20749056.6A priority patent/EP3920085B1/en
Priority to US16/966,394 priority patent/US11442583B2/en
Priority to CN202080000036.3A priority patent/CN111758102B/zh
Priority to CN202010413415.7A priority patent/CN113139412B/zh
Publication of WO2020156257A1 publication Critical patent/WO2020156257A1/zh
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

Links

Images

Classifications

    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F3/00—Input arrangements for transferring data to be processed into a form capable of being handled by the computer; Output arrangements for transferring data from processing unit to output unit, e.g. interface arrangements
    • G06F3/01—Input arrangements or combined input and output arrangements for interaction between user and computer
    • G06F3/03—Arrangements for converting the position or the displacement of a member into a coded form
    • G06F3/041—Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means
    • G06F3/043—Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means using propagating acoustic waves
    • G06F3/0436—Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means using propagating acoustic waves in which generating transducers and detecting transducers are attached to a single acoustic waves transmission substrate
    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06V—IMAGE OR VIDEO RECOGNITION OR UNDERSTANDING
    • G06V40/00—Recognition of biometric, human-related or animal-related patterns in image or video data
    • G06V40/10—Human or animal bodies, e.g. vehicle occupants or pedestrians; Body parts, e.g. hands
    • G06V40/12—Fingerprints or palmprints
    • G06V40/13—Sensors therefor
    • G06V40/1306—Sensors therefor non-optical, e.g. ultrasonic or capacitive sensing
    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F3/00—Input arrangements for transferring data to be processed into a form capable of being handled by the computer; Output arrangements for transferring data from processing unit to output unit, e.g. interface arrangements
    • G06F3/01—Input arrangements or combined input and output arrangements for interaction between user and computer
    • G06F3/03—Arrangements for converting the position or the displacement of a member into a coded form
    • G06F3/041—Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means
    • G06F3/0416—Control or interface arrangements specially adapted for digitisers
    • G06F3/04164—Connections between sensors and controllers, e.g. routing lines between electrodes and connection pads
    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F3/00—Input arrangements for transferring data to be processed into a form capable of being handled by the computer; Output arrangements for transferring data from processing unit to output unit, e.g. interface arrangements
    • G06F3/01—Input arrangements or combined input and output arrangements for interaction between user and computer
    • G06F3/03—Arrangements for converting the position or the displacement of a member into a coded form
    • G06F3/041—Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means
    • G06F3/043—Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means using propagating acoustic waves
    • G06F3/0433—Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means using propagating acoustic waves in which the acoustic waves are either generated by a movable member and propagated within a surface layer or propagated within a surface layer and captured by a movable member
    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F3/00—Input arrangements for transferring data to be processed into a form capable of being handled by the computer; Output arrangements for transferring data from processing unit to output unit, e.g. interface arrangements
    • G06F3/01—Input arrangements or combined input and output arrangements for interaction between user and computer
    • G06F3/03—Arrangements for converting the position or the displacement of a member into a coded form
    • G06F3/041—Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means
    • G06F3/044—Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means by capacitive means
    • G06F3/0445—Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means by capacitive means using two or more layers of sensing electrodes, e.g. using two layers of electrodes separated by a dielectric layer
    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06V—IMAGE OR VIDEO RECOGNITION OR UNDERSTANDING
    • G06V10/00—Arrangements for image or video recognition or understanding
    • G06V10/10—Image acquisition
    • G06V10/12—Details of acquisition arrangements; Constructional details thereof
    • G06V10/14—Optical characteristics of the device performing the acquisition or on the illumination arrangements
    • G06V10/147—Details of sensors, e.g. sensor lenses
    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06V—IMAGE OR VIDEO RECOGNITION OR UNDERSTANDING
    • G06V40/00—Recognition of biometric, human-related or animal-related patterns in image or video data
    • G06V40/10—Human or animal bodies, e.g. vehicle occupants or pedestrians; Body parts, e.g. hands
    • G06V40/12—Fingerprints or palmprints
    • G06V40/1365—Matching; Classification
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N30/00—Piezoelectric or electrostrictive devices
    • H10N30/01—Manufacture or treatment
    • H10N30/05—Manufacture of multilayered piezoelectric or electrostrictive devices, or parts thereof, e.g. by stacking piezoelectric bodies and electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N30/00—Piezoelectric or electrostrictive devices
    • H10N30/30—Piezoelectric or electrostrictive devices with mechanical input and electrical output, e.g. functioning as generators or sensors
    • H10N30/302—Sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N30/00—Piezoelectric or electrostrictive devices
    • H10N30/50—Piezoelectric or electrostrictive devices having a stacked or multilayer structure
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N30/00—Piezoelectric or electrostrictive devices
    • H10N30/80—Constructional details
    • H10N30/802—Circuitry or processes for operating piezoelectric or electrostrictive devices not otherwise provided for, e.g. drive circuits
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N30/00—Piezoelectric or electrostrictive devices
    • H10N30/80—Constructional details
    • H10N30/87—Electrodes or interconnections, e.g. leads or terminals
    • H10N30/877—Conductive materials
    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F2203/00—Indexing scheme relating to G06F3/00 - G06F3/048
    • G06F2203/041—Indexing scheme relating to G06F3/041 - G06F3/045
    • G06F2203/04103—Manufacturing, i.e. details related to manufacturing processes specially suited for touch sensitive devices

Definitions

  • a fixed voltage is applied to the first driving electrode, and the piezoelectric layer can convert the second ultrasonic wave into a voltage signal ,
  • the voltage signal is transmitted to the fingerprint recognition module through the receiving electrode, and the position of the valley and ridge in the fingerprint is determined according to the voltage signal.
  • a fingerprint recognition module which includes: a functional substrate; a piezoelectric material layer on the functional substrate; an auxiliary structure at least partially on the functional substrate; and a plurality of first drivers
  • the electrodes are located on the side of the piezoelectric material layer and the auxiliary structure away from the functional substrate, and each of the first driving electrodes extends along the first direction and exceeds the first direction of the piezoelectric material layer in the first direction.
  • the plurality of first driving electrodes are arranged at intervals along the second direction
  • the auxiliary structure is arranged in contact with at least the first edge
  • the auxiliary structure includes a slope part, which is located away from the first edge from the first edge.
  • the thickness of the slope portion in a direction perpendicular to the functional substrate gradually decreases, and the second direction intersects the first direction.
  • the slope angle of the slope portion is less than 60 degrees.
  • the size of the overlapping portion in the first direction is greater than 200 microns.
  • the material of the auxiliary structure includes curing glue.
  • the material of the piezoelectric material layer includes polyvinylidene fluoride.
  • the auxiliary structure is disposed along the edge of the piezoelectric material, and the auxiliary structure and the piezoelectric material layer are aligned in the second direction.
  • the second edge is also arranged in contact.
  • each of the first driving electrodes includes a metal layer and a transparent metal oxide layer that are sequentially stacked in a direction perpendicular to the functional substrate.
  • the fingerprint recognition module further includes: a first insulating layer located on the side of the plurality of first driving electrodes away from the functional substrate; and an acoustic wave reflective layer located on the first insulating layer The layer is away from the side of the plurality of first driving electrodes, and the orthographic projection of the acoustic wave reflection layer on the functional substrate overlaps the orthographic projection of the piezoelectric material layer on the functional substrate.
  • the functional substrate further includes: a plurality of second driving electrodes located between the receiving electrode layer and the driving circuit layer, and the plurality of second driving electrodes A driving electrode and the plurality of second driving electrodes form a plurality of driving electrode pairs, and the first driving electrode and the second driving electrode in each driving electrode pair are positive on the piezoelectric material layer.
  • the projections overlap at least partially.
  • At least one embodiment of the present disclosure further provides an electronic device including the fingerprint identification module described in any one of the above.
  • forming an auxiliary structure on the functional substrate on which the piezoelectric material layer is formed includes: patterning the liquid curing glue to at least A portion of the piezoelectric material layer is exposed to form a main body part located on the functional substrate and disposed on the same layer as the piezoelectric material layer and the first part connected to the main body part and located in the piezoelectric material layer. The edge is away from the overlapping part on the side of the functional substrate.
  • the size of the overlapping portion in the first direction is greater than 200 microns.
  • forming a plurality of first driving electrodes on a side of the piezoelectric material layer and the auxiliary structure away from the functional substrate includes: Forming a metal layer on the side of the piezoelectric material layer and the auxiliary structure away from the functional substrate; forming a transparent metal oxide layer on the side of the metal layer away from the piezoelectric material layer; oxidizing the transparent metal
  • the object layer is patterned to form a plurality of strip-shaped transparent metal oxides; and the metal layer is etched using the plurality of strip-shaped transparent metal oxides as a mask to form the plurality of first driving electrodes.
  • forming a piezoelectric material layer on the functional substrate includes: coating and crystallization of a piezoelectric material on the functional substrate; Forming a hard mask on the latter piezoelectric material; and using the hard mask as a mask to etch the crystallized piezoelectric material to form the piezoelectric material layer, the hard mask
  • the materials include one or more of molybdenum, aluminum, titanium, niobium and indium tin oxide.
  • Figure 1 is a schematic diagram of a fingerprint recognition module emitting ultrasonic waves
  • Figure 2 is a schematic diagram of a fingerprint recognition module receiving ultrasound
  • Figure 3 is a schematic diagram of a fingerprint identification module for fingerprint identification
  • Figure 4 is a schematic structural diagram of a fingerprint recognition module
  • Fig. 5A is a scanning electron micrograph of a piezoelectric layer in a fingerprint recognition module
  • 5B is a scanning electron micrograph of a photoresist pattern on a conductive layer in a fingerprint recognition module
  • 5C is a scanning electron microscope view of a plurality of first driving electrodes on a piezoelectric layer in a fingerprint recognition module
  • 6A is a schematic cross-sectional view of a fingerprint identification module along a first direction according to an embodiment of the present disclosure
  • 6B is a schematic cross-sectional view of a fingerprint identification module along a second direction according to an embodiment of the present disclosure
  • 6C is a schematic cross-sectional view of another fingerprint identification module along a second direction according to an embodiment of the present disclosure
  • FIG. 7 is a schematic plan view of a fingerprint identification module according to an embodiment of the present disclosure.
  • FIG. 8 is a schematic structural diagram of another fingerprint identification module according to an implementation of the present disclosure.
  • FIG. 9 is a schematic structural diagram of another fingerprint identification module according to an implementation of the present disclosure.
  • FIG. 10A is a schematic cross-sectional view of another fingerprint identification module along a second direction according to an embodiment of the present disclosure
  • 10B is a schematic diagram of the positional relationship between driving electrodes and receiving electrodes in another fingerprint recognition module according to an embodiment of the present disclosure
  • FIG. 11 is a schematic structural diagram of an electronic device according to an embodiment of the present disclosure.
  • FIG. 12 is a flowchart of a method for manufacturing a fingerprint identification module according to an embodiment of the present disclosure.
  • Fig. 1 is a schematic diagram of a fingerprint recognition module transmitting ultrasonic waves
  • Fig. 2 is a schematic diagram of a fingerprint recognition module receiving ultrasonic waves.
  • the fingerprint recognition module includes an ultrasonic sensor 10; the ultrasonic sensor 10 includes an upper electrode 11, a lower electrode 12, and a piezoelectric layer 13 located between the upper electrode 11 and the lower electrode 12; Made of electrical materials, it can be excited by voltage to produce the inverse piezoelectric effect.
  • AC voltage alternating voltage
  • the piezoelectric layer 13 is due to the inverse piezoelectric effect.
  • Deformation occurs or drives the film layers above and below the piezoelectric layer 13 to vibrate together, so that ultrasonic waves can be generated and emitted outward.
  • a cavity such as an air cavity
  • the ultrasonic waves emitted by the ultrasonic sensor will be strengthened. Thereby, the ultrasonic wave can be emitted better.
  • the ultrasonic wave emitted by the ultrasonic sensor 10 is reflected by the fingerprint 500, and the reflected ultrasonic wave is converted into an alternating voltage in the piezoelectric layer; at this time, the upper electrode 11 is grounded, and the lower electrode 12 can be used as a receiving electrode. Receive the alternating voltage generated by the piezoelectric layer. Since the fingerprint 500 includes the valley 510 and the ridge 520, their ability to reflect ultrasonic waves is different (the valley 510 has a stronger ability to reflect ultrasonic waves), resulting in different intensities of the ultrasonic waves reflected by the valley 510 and the ridge 520. Therefore, it can be judged whether the ultrasonic wave is reflected by a valley or a ridge by the alternating voltage received by the receiving electrode.
  • FIG. 3 is a schematic diagram of a fingerprint identification module for fingerprint identification.
  • the fingerprint recognition module includes an upper electrode 11, a plurality of lower electrodes 12, a piezoelectric layer 13 located between the upper electrode 11 and the plurality of lower electrodes 12, and an upper electrode 11 away from the piezoelectric layer 13
  • the substrate 80 on one side and the protective layer 90 on the side of the multiple lower electrodes 12 away from the piezoelectric layer 13; the ultrasonic sensor 10 composed of the lower electrode 12, the piezoelectric layer 13 and the multiple upper electrodes 11 can emit ultrasonic waves and is acceptable Ultrasonic, that is, the ultrasonic sensor 10 serves as an ultrasonic transmitting sensor and an ultrasonic receiving sensor.
  • the ultrasonic wave emitted by the ultrasonic sensor 10 is reflected by the fingerprint 500, and the reflected ultrasonic wave is converted into an alternating voltage in the piezoelectric layer; at this time, the upper electrode 11 is grounded, and the lower electrodes 12 can be As the receiving electrode, it can receive the alternating voltage generated by the piezoelectric layer at different positions. Since the fingerprint 500 includes the valley 510 and the ridge 520, their ability to reflect ultrasonic waves is different (the valley 510 has a stronger ability to reflect ultrasonic waves), resulting in different intensities of the ultrasonic waves reflected by the valley 510 and the ridge 520. Therefore, the position information of the valleys and ridges of the fingerprint 500 can be obtained through the alternating voltages received by the plurality of lower electrodes 12, so that fingerprint identification can be realized.
  • FIG. 4 is a schematic diagram of the structure of a fingerprint recognition module.
  • the fingerprint recognition module includes a substrate 80, a CMOS backplane 70, a piezoelectric layer 13, a plurality of first driving electrodes 11 and an acoustic wave reflection layer 15.
  • the CMOS backplane 70 may include receiving electrodes and corresponding driving unit.
  • the inventor of this application noticed that in the manufacturing process of the above-mentioned fingerprint recognition module, it is necessary to form a conductive layer on the side of the piezoelectric layer away from the CMOS backplane, and then on the conductive layer away from the piezoelectric layer.
  • FIG. 5A is a scanning electron micrograph of a piezoelectric layer in a fingerprint recognition module
  • Figure 5B is a scanning electron micrograph of a photoresist pattern on a conductive layer in a fingerprint recognition module
  • Figure 5C is a fingerprint recognition module Scanning electron micrographs of the plurality of first driving electrodes on the piezoelectric layer in the group.
  • the embodiments of the present disclosure provide a fingerprint identification module, a manufacturing method thereof, and an electronic device.
  • the fingerprint recognition module includes a substrate, a piezoelectric material layer, an auxiliary structure and a plurality of first drive electrodes; the piezoelectric material layer is located on the substrate, the auxiliary structure is at least partially located on the substrate, and the plurality of first drive electrodes are located on the piezoelectric material and A side of the auxiliary structure away from the substrate; each first drive electrode extends along the first direction and exceeds the first edge of the piezoelectric material layer in the first direction, a plurality of first drive electrodes are spaced apart along the second direction, and the auxiliary structure is at least The auxiliary structure is arranged in contact with the first edge, and the auxiliary structure includes a slope part.
  • the thickness of the slope part in the direction perpendicular to the functional substrate gradually decreases from the first edge to the direction away from the center of the piezoelectric material layer. Intersect in the first direction.
  • the auxiliary structure since the auxiliary structure is arranged in contact with the first edge of the piezoelectric material layer, and the auxiliary structure includes a slope part, it is possible to avoid generating multiple first driving electrodes on the piezoelectric material layer. Problems such as disconnection and residual conductive materials can improve the yield of products.
  • An embodiment of the present disclosure provides a fingerprint identification module.
  • 6A is a schematic cross-sectional view of a fingerprint recognition module along a first direction according to an embodiment of the present disclosure
  • FIG. 6B is a schematic cross-sectional view of a fingerprint recognition module along a second direction according to an embodiment of the present disclosure. As shown in FIGS.
  • the fingerprint recognition module 100 includes a functional substrate 110, a piezoelectric material layer 120, an auxiliary structure 130, and a plurality of first driving electrodes 140; the piezoelectric material layer 120 is located on the functional substrate 110 and assists The structure 130 is at least partially located on the functional substrate 110; the plurality of first driving electrodes 140 are located on the side of the piezoelectric material layer 120 and the auxiliary structure 130 away from the functional substrate 110.
  • each first driving electrode 140 extends along the first direction and exceeds the first edge 121 of the piezoelectric material layer 120 in the first direction, that is, each first driving electrode 140 crosses the piezoelectric material.
  • the first edge 121 of the layer 120 in the first direction as shown in FIG.
  • the plurality of first driving electrodes 140 are arranged at intervals along the second direction, and the plurality of first driving electrodes 140 are insulated from each other.
  • the auxiliary structure 130 is arranged in contact with at least the first edge 121, and includes a slope portion 132; from the first edge 121 to the direction away from the center of the piezoelectric material layer 120, the slope portion 132 is perpendicular to the function
  • the direction of the substrate 110 gradually decreases, and the aforementioned second direction intersects the first direction.
  • the first edge of the piezoelectric material layer in the first direction means that the extension direction of the first edge intersects the first direction, and the extension direction of the first edge is parallel to the first direction.
  • the auxiliary structure since the auxiliary structure is arranged in contact with at least the first edge, the first drive electrode extending in the first direction and beyond the first edge extends from the piezoelectric material layer to the auxiliary structure, and It does not directly extend from the piezoelectric material layer to the functional substrate; in addition, the auxiliary structure includes a slope portion, and the thickness of the slope portion gradually decreases from the first edge to the direction away from the center of the piezoelectric material layer. Therefore, in the process of forming a plurality of first driving electrodes on the piezoelectric material layer, the photoresist can be fully exposed and developed at the first edge, thereby effectively preventing the conductive layer from being disconnected during the subsequent etching process. In addition, the problem of residual conductive material can also be avoided, so that two adjacent first driving electrodes are electrically connected to each other, thereby improving the yield of the product.
  • the first direction and the second direction are perpendicular to each other.
  • the slope angle ⁇ of the slope portion 132 is less than 60 degrees. Such a configuration can better avoid problems such as disconnection and residual conductive material during the process of forming multiple first driving electrodes.
  • the auxiliary structure 130 includes a main body portion 134 and an overlapping portion 136; the main body portion 134 is located on the functional substrate 110 and is arranged in the same layer as the piezoelectric material layer 120; and the overlapping portion 136 and the main body The portion 134 is connected to and located on the side of the first edge 121 of the piezoelectric material layer 120 away from the functional substrate 110.
  • the auxiliary structure can avoid problems such as disconnection and residual conductive material during the formation of the first drive electrode, and at the same time, the piezoelectric material layer can be fixed on the functional substrate through the overlapping portion, thereby preventing the piezoelectric material layer from being Shedding occurred during production and use.
  • the material of the piezoelectric material layer includes polyvinylidene fluoride (PVDF). Since polyvinylidene fluoride is a fluorine-containing material, it has poor adhesion to a functional substrate (for example, a silicon nitride layer), causing the piezoelectric material layer to easily fall off. Therefore, by providing the above-mentioned overlapping portion, the fingerprint identification module can effectively prevent the piezoelectric material layer from falling off during the manufacturing and use process.
  • PVDF polyvinylidene fluoride
  • the composition of the stripping liquid of the photoresist pattern usually includes N-methylformamide (NMF) and diethylene glycol monomethyl ether, and polyvinylidene fluoride Dissolved in N-methyl formamide and ethers. Therefore, on the one hand, the above-mentioned auxiliary structure can protect the edge of the piezoelectric material layer during the process of stripping the photoresist pattern (PR), and prevent the stripping liquid of the photoresist pattern from corroding the piezoelectric material layer, thereby avoiding the piezoelectric material. Layer separation; on the other hand, the above-mentioned overlapping portion of the auxiliary structure can fix the piezoelectric material layer on the functional substrate, thereby further preventing the piezoelectric material layer from falling off during the manufacturing and use process.
  • NMF N-methylformamide
  • diethylene glycol monomethyl ether diethylene glycol monomethyl ether
  • the main body portion 134 includes the above-mentioned slope portion 132.
  • the slope portion 132 is a part of the main body portion 134.
  • the size of the overlapping portion 136 in the first direction is greater than 200 microns. According to experimental results, when the size of the overlapping portion in the first direction is greater than 200 microns, the auxiliary structure can effectively prevent the piezoelectric material layer from falling off during the manufacturing and use process.
  • the size of the overlapping portion in the first direction may be 400, 600, 800, 1000, or 1500 microns.
  • the material of the auxiliary structure includes curing glue. Therefore, in the process of forming the auxiliary structure, after the curing adhesive is applied and before the auxiliary structure is cured, the curing adhesive will undergo a leveling process due to its certain fluidity or ductility, thereby naturally forming the above-mentioned slope Therefore, no additional process steps are required, thereby reducing the manufacturing difficulty and cost.
  • the slope angle of the formed slope is about 45 degrees.
  • the material of the auxiliary structure includes optical curing glue (OC glue). Therefore, the auxiliary structure can be directly patterned through the exposure process without using a mask process, thereby further reducing the manufacturing cost.
  • the material of the auxiliary structure may be an acrylate system material.
  • the fingerprint recognition module 100 further includes a first insulating layer 151 and an acoustic wave reflecting layer 160; the first insulating layer 151 is located on the plurality of first driving electrodes 140 away from the functional substrate 110 One side; the acoustic wave reflective layer 160 is located on the side of the first insulating layer 151 away from the plurality of first driving electrodes 140, the orthographic projection of the acoustic wave reflective layer 160 on the functional substrate 110 and the orthographic projection of the piezoelectric material layer 120 on the functional substrate 110 The projections overlap.
  • the acoustic wave reflection layer 160 can reflect the ultrasonic waves generated by the piezoelectric material layer 120 and propagated to the acoustic wave reflection layer 160 to the position where the functional substrate 110 is located, thereby helping to enhance the intensity or energy of the emitted ultrasonic waves.
  • the acoustic wave reflection layer 160 may be made of silver (Ag), and the first insulating layer 151 may be made of silicon nitride (SiNx).
  • the embodiments of the present disclosure include but are not limited thereto.
  • the acoustic wave reflection layer can also be made of other materials with the characteristic of reflecting ultrasonic waves, and the first insulating layer can also be made of other insulating materials such as resin.
  • the orthographic projection of the plurality of receiving electrodes 175 on the substrate 190 and the orthographic projection of the piezoelectric material layer 120 on the substrate 110 at least partially overlap; the orthographic projection of the plurality of receiving electrodes 175 on the substrate 190 and the plurality of first driving electrodes 140
  • the orthographic projection on the substrate 190 at least partially overlaps, so that a plurality of ultrasonic receiving elements can be formed with the first driving electrode 140 and the piezoelectric material layer 120.
  • the plurality of first driving electrodes, the piezoelectric material layer, and the plurality of receiving electrodes arranged on the piezoelectric material layer can constitute a plurality of ultrasonic transmitting elements;
  • the electrical material layer and the plurality of first driving electrodes may constitute a plurality of ultrasonic receiving elements.
  • multiple receiving electrodes can be grounded, and then alternating voltages are applied along the multiple first driving electrodes.
  • the piezoelectric material layer corresponding to the first driving electrodes is due to the inverse piezoelectric effect. Deformation occurs or drives the film layers above and below the piezoelectric material layer to vibrate together, so that ultrasonic waves can be generated and emitted outward.
  • the first driving electrode layer of the fingerprint recognition module includes a plurality of first driving electrodes
  • a plurality of ultrasonic emitting elements can be formed, so that the ultrasonic focusing can be realized by driving the plurality of first driving electrodes separately, which can improve The intensity or energy of the emitted ultrasound in a specific area or in a specific direction, thereby improving the fingerprint recognition performance.
  • it can make the emitted ultrasound have better directivity, thereby reducing the crosstalk between the valleys and ridges of the fingerprint, and then Can improve fingerprint recognition performance.
  • the receiving electrode 175 and the piezoelectric material layer 120 may be arranged in contact, so as to better receive electrical signals.
  • the embodiments of the present disclosure include but are not limited to this.
  • the functional substrate 110 further includes: a second insulating layer 152 located between the receiving electrode layer 170 and the piezoelectric material layer 120.
  • the second insulating layer 152 can reduce the influence of the leakage current generated by the piezoelectric material layer 120 during polarization on the thin film transistor in the driving unit 185 connected to the receiving electrode 175.
  • the second insulating layer can also be made of silicon nitride (SiNx).
  • the substrate 190 includes a glass substrate.
  • the substrate 190 includes a polyimide substrate. Therefore, the substrate 190 can be made thinner, and the thickness of the substrate 190 ranges from 5-20 microns. It should be noted that when the substrate 190 is a polyimide substrate, a polyimide layer may be formed on the glass substrate first, and then the receiving electrode layer, piezoelectric material layer, and first driving electrode may be formed on the polyimide layer. Layer structure, and finally remove the glass substrate to obtain the fingerprint recognition module described in this example.
  • FIG. 7 is a schematic plan view of a fingerprint identification module according to an embodiment of the present disclosure.
  • the auxiliary structure 130 is arranged along the edge of the piezoelectric material 120, and the auxiliary structure 130 is also arranged in contact with the second edge 122 of the piezoelectric material layer 120 in the second direction.
  • the auxiliary structure can protect the edge of the piezoelectric material layer in all directions during the process of stripping the photoresist pattern (PR), and better prevent the stripping liquid of the photoresist pattern from corroding the piezoelectric material layer, thereby improving It is good to prevent the piezoelectric material layer from detaching.
  • PR photoresist pattern
  • the embodiments of the present disclosure include but are not limited thereto, and the auxiliary structure may also be provided only on the first edge of the piezoelectric material along the first direction.
  • the second edge of the piezoelectric material layer in the second direction means that the extension direction of the second edge intersects the second direction, and the extension direction of the second edge is parallel to the second direction.
  • the shape of the orthographic projection of the piezoelectric material layer 120 on the functional substrate 110 may include a rectangle, such as a square.
  • the auxiliary structure 130 is arranged along the four edges of the piezoelectric material layer 120.
  • the embodiments of the present disclosure include but are not limited to this.
  • the shape of the piezoelectric material layer can be set according to actual requirements; the auxiliary structure can also be set only on the first edge of the piezoelectric material layer in the first direction.
  • FIG. 8 is a schematic structural diagram of another fingerprint identification module according to an implementation of the present disclosure.
  • each first driving electrode 140 includes a metal layer 142 and a transparent metal oxide layer 144 that are sequentially stacked in a direction perpendicular to the functional substrate.
  • the composition of the stripping liquid of the photoresist pattern usually includes N-methylformamide (NMF) and diethylene glycol monomethyl ether, and polyvinylidene fluoride is dissolved in N-methylformamide and ethers. Therefore, the above-mentioned transparent metal oxide layer can be used as a mask in the process of forming the first driving electrode, so as to prevent the peeling liquid of the photoresist pattern from corroding the piezoelectric material layer.
  • the usual transparent metal oxide layer etching solution cannot etch the metal layer, and the metal layer etching solution cannot etch the transparent metal oxide layer, so the transparent metal oxide layer can be used as a mask for the metal layer. Perform etching.
  • forming a plurality of first driving electrodes on the side of the piezoelectric material layer and the auxiliary structure away from the functional substrate includes the following steps: forming a metal layer on the side of the piezoelectric material layer and the auxiliary structure away from the functional substrate; A transparent metal oxide layer is formed on one side of the electrical material layer; a photoresist pattern is formed on the side of the transparent metal oxide layer away from the metal layer, and the transparent metal oxide layer is patterned using the photoresist pattern as a mask to form A plurality of strip-shaped transparent metal oxides; stripping the above-mentioned photoresist pattern; and etching the metal layer with the plurality of strip-shaped transparent metal oxides as a mask to form a plurality of first driving electrodes.
  • the metal layer still covers the piezoelectric material layer, so as to avoid contact between the peeling liquid and the piezoelectric material layer. Therefore, the peeling liquid of the photoresist pattern can be prevented from corroding the piezoelectric material layer.
  • the aforementioned transparent metal oxide may include indium tin oxide (ITO).
  • ITO indium tin oxide
  • the embodiments of the present disclosure include but are not limited thereto, and the above-mentioned transparent metal oxide may also be other specific materials.
  • the thickness range of the transparent metal oxide layer is Since the piezoelectric material layer is usually a porous material with a rough surface, the surface of the metal layer will be uneven. With this arrangement, the transparent metal oxide layer can better cover the metal layer.
  • FIG. 9 is a schematic structural diagram of another fingerprint identification module according to an implementation of the present disclosure.
  • the fingerprint recognition module 100 includes a functional substrate 110, a piezoelectric material layer 120, an auxiliary structure 130 and a plurality of first driving electrodes 140; the piezoelectric material layer 120 is located on the functional substrate 110, and the auxiliary structure 130 is at least Partly located on the functional substrate 110; the plurality of first driving electrodes 140 are located on the side of the piezoelectric material layer 120 and the auxiliary structure 130 away from the functional substrate 110.
  • Each first driving electrode 140 extends along the first direction and exceeds the first edge 121 of the piezoelectric material layer 120 in the first direction; a plurality of first driving electrodes 140 are arranged at intervals along the second direction, and a plurality of first driving electrodes 140 Set up insulated from each other.
  • the auxiliary structure 130 is arranged in contact with the first edge 121 and includes a slope portion 132; the thickness of the slope portion 132 in a direction perpendicular to the functional substrate 110 in the direction from the first edge 121 to the center of the piezoelectric material layer 120 slowing shrieking. As shown in FIG.
  • the functional substrate 110 includes a substrate receiving electrode layer 170, a driving circuit layer 180 and a substrate 190; the receiving electrode layer 170 is located on the side of the piezoelectric material layer 120 close to the substrate 190 and includes a plurality of receiving electrodes 175; the driving circuit layer 180 is located on the receiving electrode 170 It is close to the side of the substrate 190 and includes a plurality of driving units 185, and the plurality of receiving electrodes 175 are arranged in a one-to-one correspondence with the plurality of driving units 185, and the plurality of driving units 185 are configured to drive the plurality of receiving electrodes 175 to receive the piezoelectric material layer 120 The electrical signal generated.
  • the orthographic projection of the plurality of receiving electrodes 175 on the substrate 190 and the orthographic projection of the piezoelectric material layer 120 on the substrate 110 at least partially overlap.
  • the fingerprint recognition module can also apply a first driving voltage (for example +50V) to the first driving electrode, and a second driving voltage (for example -50V) of opposite polarity to the second driving electrode, so as to achieve
  • the lower driving voltage (absolute value) realizes high-voltage driving or high-voltage excitation of the piezoelectric material layer. Therefore, the fingerprint recognition module can realize high-voltage drive or high-voltage excitation of the piezoelectric material layer with a lower driving voltage (absolute value), on the one hand, it can greatly reduce the electronic components in the driving unit caused by high voltage.
  • the risk of breakdown of the device (such as thin film transistor) improves the stability and durability of the product.
  • the receiving electrode is electrically connected to the driving unit, the driving voltage cannot be directly applied to the receiving electrode, so the fingerprint recognition module provided in this example is cleverly provided with multiple second drive electrodes and connected to multiple first drives.
  • the electrodes form a plurality of driving electrode pairs to realize high-voltage driving or high-voltage excitation of the piezoelectric material layer with a lower driving voltage (absolute value).
  • each second driving electrode 240 on the piezoelectric material layer 120 is similar to the orthographic projection of the plurality of receiving electrodes 175 arranged along the first direction on the piezoelectric material layer 120.
  • the projections overlap at least partially.
  • the fingerprint recognition module 100 also includes a plurality of connecting electrodes 250.
  • Each second driving electrode 240 includes a plurality of through holes 245.
  • the plurality of connecting electrodes 250 are respectively disposed in the plurality of through holes 245 and the plurality of receiving electrodes 175 are connected to the plurality of The driving units 185 are electrically connected respectively.
  • the receiving electrode can better receive the electrical signal generated by the piezoelectric material layer due to the ultrasonic wave, thereby improving the accuracy of fingerprint recognition.
  • FIG. 11 is a schematic structural diagram of an electronic device according to an embodiment of the present disclosure.
  • the electronic device 300 includes the aforementioned fingerprint identification module 100.
  • the electronic device can realize the fingerprint recognition function.
  • the fingerprint recognition module included therein can effectively avoid the problem of disconnection and residual conductive material in the conductive layer during the subsequent etching process, the electronic device has better yield and performance.
  • the display device 300 further includes a display module 310, and the area of the display module 310 is approximately the same as that of the fingerprint identification module 100, so that full-screen fingerprint identification can be realized.
  • the fingerprint recognition module can also implement a touch function, so that no additional touch device, such as a capacitive touch panel, can be provided, thereby reducing the cost of the display device.
  • the embodiments of the present disclosure include but are not limited to this.
  • the area of the display module and the area of the fingerprint identification module may not be equal, and the fingerprint identification module may only be arranged in the area where fingerprint identification is required.
  • the electronic device may be a display device.
  • the display device may be an electronic device with a display function, such as a television, a mobile phone, a computer, a notebook computer, an electronic photo album, and a navigator.
  • FIG. 12 is a flowchart of a method for manufacturing a fingerprint identification module according to an embodiment of the present disclosure. As shown in FIG. 12, the manufacturing method of the fingerprint identification module includes the following steps S101-S104.
  • Step S101 Provide a functional substrate.
  • Step S103 forming an auxiliary structure on the functional substrate on which the piezoelectric material layer is formed.
  • Step S104 forming a plurality of first driving electrodes on the side of the piezoelectric material layer and the auxiliary structure away from the functional substrate, and each first driving electrode extends along the first direction and exceeds the first edge of the piezoelectric material layer in the first direction ,
  • the plurality of first driving electrodes are arranged at intervals along the second direction, the auxiliary structure is arranged in contact with at least the first edge, the auxiliary structure includes a slope part, and the slope part is in a direction away from the center of the piezoelectric material layer from the first edge
  • the thickness in the direction perpendicular to the functional substrate gradually decreases, and the second direction intersects the first direction.
  • the auxiliary structure is arranged in contact with at least the first edge, the first driving electrode extending in the first direction and exceeding the first edge extends from the piezoelectric material layer to the auxiliary
  • the structure does not extend directly from the piezoelectric material layer to the functional substrate; in addition, the auxiliary structure includes a slope portion, and the thickness of the slope portion gradually decreases from the first edge to the direction away from the center of the piezoelectric material layer. Therefore, in the process of forming a plurality of first driving electrodes on the piezoelectric material layer, the photoresist can be fully exposed and developed at the first edge, thereby effectively preventing the conductive layer from being disconnected during the subsequent etching process. In addition, the problem of residual conductive material can also be avoided, so that two adjacent first driving electrodes are electrically connected to each other, thereby improving the yield of the product.
  • first direction and second direction may be perpendicular to each other.
  • the material of the auxiliary structure includes optical curing glue (OC glue). Therefore, the step of patterning the liquid curing adhesive to expose at least a part of the piezoelectric material layer can be directly patterned through an exposure process without using a mask process, thereby further reducing the manufacturing cost.
  • the material of the auxiliary structure may be an acrylate system material.
  • the liquid curing adhesive can be cured by heat curing.
  • the embodiments of the present disclosure include but are not limited thereto, and other curing methods may also be used to cure the liquid curing adhesive.
  • the material of the auxiliary structure may be a material that can be cured at a low temperature; for example, the curing temperature is less than 130 degrees Celsius. Such a configuration can prevent the high temperature from adversely affecting other structures of the fingerprint identification module.
  • forming the auxiliary structure on the functional substrate on which the piezoelectric material layer is formed includes: patterning the liquid curing glue to expose at least a portion of the piezoelectric material layer to form the same layer on the functional substrate and the piezoelectric material layer The main body part and the overlapping part connected to the main body part and located on the side of the first edge of the piezoelectric material layer away from the functional substrate are provided.
  • the auxiliary structure can avoid problems such as disconnection and residual conductive material during the formation of the first drive electrode, and at the same time, the piezoelectric material layer can be fixed on the functional substrate through the overlapping portion, thereby preventing the piezoelectric material layer from being Shedding occurred during production and use.
  • the material of the piezoelectric material layer includes polyvinylidene fluoride (PVDF)
  • PVDF polyvinylidene fluoride
  • the functional substrate such as a silicon nitride layer
  • the manufacturing method of the fingerprint recognition module can effectively prevent the piezoelectric material layer from falling off during the manufacturing process.
  • the composition of the stripping liquid of the photoresist pattern usually includes N-methylformamide (NMF) and diethylene glycol monomethyl ether, and polyvinylidene fluoride Dissolved in N-methyl formamide and ethers. Therefore, on the one hand, the above-mentioned auxiliary structure can protect the edge of the piezoelectric material layer during the process of stripping the photoresist pattern (PR), and prevent the stripping liquid of the photoresist pattern from corroding the piezoelectric material layer, thereby avoiding the piezoelectric material. Layer separation; on the other hand, the above-mentioned overlapping portion of the auxiliary structure can fix the piezoelectric material layer on the functional substrate, thereby further preventing the piezoelectric material layer from falling off during the manufacturing process.
  • NMF N-methylformamide
  • diethylene glycol monomethyl ether diethylene glycol monomethyl ether
  • the size of the overlap in the first direction is greater than 200 microns. According to experimental results, when the size of the overlapping portion in the first direction is greater than 200 microns, the auxiliary structure can effectively prevent the piezoelectric material layer from falling off during the manufacturing and use process.
  • the size of the overlapping portion in the first direction may be 400, 600, 800, 1000, or 1500 microns.

Landscapes

  • Engineering & Computer Science (AREA)
  • Theoretical Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • General Engineering & Computer Science (AREA)
  • General Physics & Mathematics (AREA)
  • Human Computer Interaction (AREA)
  • Multimedia (AREA)
  • Acoustics & Sound (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Networks & Wireless Communication (AREA)
  • General Health & Medical Sciences (AREA)
  • Vascular Medicine (AREA)
  • Health & Medical Sciences (AREA)
  • Image Input (AREA)
  • Measurement Of The Respiration, Hearing Ability, Form, And Blood Characteristics Of Living Organisms (AREA)
  • Transducers For Ultrasonic Waves (AREA)

Abstract

一种指纹识别模组及其制作方法和电子装置。该指纹识别模组包括基板、压电材料层、辅助结构和多个第一驱动电极；压电材料层位于基板上，辅助结构至少部分位于基板上，多个第一驱动电极位于压电材料和辅助结构远离基板的一侧；各第一驱动电极沿第一方向延伸并超过压电材料层在第一方向上的第一边缘，多个第一驱动电极沿第二方向间隔设置，辅助结构至少与第一边缘接触设置，辅助结构包括斜坡部，在从第一边缘到远离压电材料层的中心的方向上，斜坡部在垂直于功能基板的方向上的厚度逐渐减小。该指纹识别模组在压电材料层上形成多个第一驱动电极的过程中可避免产生断线和导电材料残留等问题，从而可提高产品的良率。

Description

指纹识别模组及其制作方法和电子装置
本申请要求于2019年01月28日递交的第201910082585.9号中国专利申请的优先权和于2019年09月12日递交的第PCT/CN2019/105749号PCT申请的优先权，在此全文引用上述中国专利申请公开的内容和上述PCT申请公开的内容以作为本申请的一部分。
技术领域
本公开的实施例涉及一种指纹识别模组及其制作方法和电子装置。
背景技术
随着科学技术的不断发展，指纹识别技术已经逐渐应用到人们的日常生活中。指纹识别技术可通过比较不同指纹的细节特征点来进行鉴别，从而达到身份识别的功能。通常，指纹识别技术可分为光学式指纹识别技术、硅芯片式指纹识别技术和超声波式指纹识别技术。
目前，超声波式指纹识别技术是各大厂商热门的研究方向。超声波指纹识别结构主要为三叠层结构，包括第一驱动电极、接收电极以及位于两者之间的压电层。当对第一驱动电极和接收电极加载驱动电压时，压电层受到电压激发产生逆压电效应，向外发射第一超声波。该第一超声波接触手指后，被手指反射回第二超声波。由于指纹包括谷和脊，所以被指纹反射回到压电层的第二超声波震动强度有差异，此时，对第一驱动电极加载固定电压，则压电层可将第二超声波转换成电压信号，该电压信号通过接收电极传输给指纹识别模块，根据该电压信号判断指纹中谷和脊的位置。
发明内容
本公开实施例提供一种指纹识别模组及其制作方法和电子装置。该指纹识别模组包括基板、压电材料层、辅助结构和多个第一驱动电极；压电材料层位于基板上，辅助结构至少部分位于基板上，多个第一驱动电极位于压电材料和辅助结构远离基板的一侧；各第一驱动电极沿第一方向延伸并超过压电材料层在第一方向上的第一边缘，多个第一驱动电极沿第二方向间隔设置，辅助结构至少与第一边缘接触设置，辅助结构包括斜坡部，在从第一边缘到远离压电材 料层的中心的方向上，斜坡部在垂直于功能基板的方向上的厚度逐渐减小，第二方向与第一方向相交。在该指纹识别模组中，由于辅助结构与压电材料层的第一边缘接触设置，并且辅助结构包括斜坡部，因此在压电材料层上形成多个第一驱动电极的过程中可避免产生断线和导电材料残留等问题，从而可提高产品的良率。
本公开至少一个实施例提供一种指纹识别模组，其包括：功能基板；压电材料层，位于所述功能基板上；辅助结构，至少部分位于所述功能基板上；以及多个第一驱动电极，位于所述压电材料层和所述辅助结构远离所述功能基板的一侧，各所述第一驱动电极沿第一方向延伸并超过所述压电材料层在第一方向上的第一边缘，所述多个第一驱动电极沿第二方向间隔设置，所述辅助结构至少与所述第一边缘接触设置，所述辅助结构包括斜坡部，在从所述第一边缘到远离所述压电材料层的中心的方向上，所述斜坡部在垂直于所述功能基板的方向上的厚度逐渐减小，所述第二方向与所述第一方向相交。
例如，在本公开一实施例提供的指纹识别模组中，所述斜坡部的坡度角小于60度。
例如，在本公开一实施例提供的指纹识别模组中，所述辅助结构包括：主体部，位于所述功能基板上且与所述压电材料层同层设置；以及重叠部，与所述主体部相连并位于所述压电材料层的所述第一边缘远离所述功能基板的一侧。
例如，在本公开一实施例提供的指纹识别模组中，所述重叠部在所述第一方向上的尺寸大于200微米。
例如，在本公开一实施例提供的指纹识别模组中，所述辅助结构的材料包括固化胶。
例如，在本公开一实施例提供的指纹识别模组中，所述辅助结构的材料包括光学固化胶。
例如，在本公开一实施例提供的指纹识别模组中，所述压电材料层的材料包括聚偏氟乙烯。
例如，在本公开一实施例提供的指纹识别模组中，所述辅助结构沿着所述压电材料的边缘设置，所述辅助结构与所述压电材料层在所述第二方向上的第二边缘也接触设置。
例如，在本公开一实施例提供的指纹识别模组中，各所述第一驱动电极包 括沿垂直于功能基板的方向上依次层叠的金属层和透明金属氧化物层。
例如，本公开一实施例提供的指纹识别模组还包括：第一绝缘层，位于所述多个第一驱动电极远离所述功能基板的一侧；以及声波反射层，位于所述第一绝缘层远离所述多个第一驱动电极的一侧，所述声波反射层在所述功能基板上的正投影与所述压电材料层在所述功能基板上的正投影重叠。
例如，在本公开一实施例提供的指纹识别模组中，所述功能基板包括：基板；接收电极层，位于所述压电材料层靠近所述基板的一侧且包括多个接收电极；以及驱动电路层，位于所述接收电极靠近所述基板的一侧且包括多个驱动单元，所述多个接收电极在所述基板上的正投影与所述压电材料层在所述基板上的正投影至少部分重叠，所述多个接收电极在所述基板上的正投影与所述多个第一驱动电极在所述基板上的正投影至少部分重叠。
例如，在本公开一实施例提供的指纹识别模组中，所述功能基板还包括：第二绝缘层，位于所述接收电极层与所述压电材料层之间。
例如，在本公开一实施例提供的指纹识别模组中，所述功能基板还包括：多个第二驱动电极，位于所述接收电极层与所述驱动电路层之间，所述多个第一驱动电极和所述多个第二驱动电极形成多个驱动电极对，各所述驱动电极对中的所述第一驱动电极和所述第二驱动电极在所述压电材料层上的正投影至少部分重叠。
本公开至少一个实施例还提供一种电子装置，包括上述任一项所述的指纹识别模组。
本公开至少一个实施例还提供一种指纹识别模组的制作方法，其包括：提供功能基板；在所述功能基板上形成压电材料层；在形成有所述压电材料层的所述功能基板上形成辅助结构；以及在所述压电材料层和所述辅助结构远离所述功能基板的一侧形成多个第一驱动电极，各所述第一驱动电极沿第一方向延伸并超过所述压电材料层在第一方向上的第一边缘，所述多个第一驱动电极沿第二方向间隔设置，所述辅助结构至少与所述第一边缘接触设置，所述辅助结构包括斜坡部，在从所述第一边缘到远离所述压电材料层的中心的方向上，所述斜坡部在垂直于所述功能基板的方向上的厚度逐渐减小，所述第二方向与所述第一方向相交。
例如，在本公开一实施例提供的指纹识别模组的制作方法中，在形成有所述压电材料层的所述功能基板上形成辅助结构包括：在形成有所述压电材料层 的所述功能基板上涂覆液态固化胶；对所述液体固化胶进行图案化以至少暴露部分所述压电材料层；以及对所述液态固化胶进行固化，所述液态固化胶经过流平和固化以形成所述斜坡部。
例如，在本公开一实施例提供的指纹识别模组的制作方法中，在形成有所述压电材料层的所述功能基板上形成辅助结构包括：对所述液体固化胶进行图案化以至少暴露部分所述压电材料层以形成位于所述功能基板上且与所述压电材料层同层设置的主体部和与所述主体部相连且位于所述压电材料层的所述第一边缘远离所述功能基板的一侧的重叠部。
例如，在本公开一实施例提供的指纹识别模组的制作方法中，所述重叠部在所述第一方向上的尺寸大于200微米。
例如，在本公开一实施例提供的指纹识别模组的制作方法中，在所述压电材料层和所述辅助结构远离所述功能基板的一侧形成多个第一驱动电极包括：在所述压电材料层和所述辅助结构远离所述功能基板的一侧形成金属层；在所述金属层远离所述压电材料层的一侧形成透明金属氧化物层；对所述透明金属氧化物层进行图案化以形成多个条状透明金属氧化物；以及以所述多个条状透明金属氧化物为掩膜对所述金属层进行刻蚀以形成所述多个第一驱动电极。
例如，在本公开一实施例提供的指纹识别模组的制作方法中，在所述功能基板上形成压电材料层包括：在所述功能基板上涂覆压电材料并晶化；在晶化后的所述压电材料上形成硬掩膜；以及以所述硬掩膜为掩膜对晶化后的所述压电材料进行刻蚀以形成所述压电材料层，所述硬掩膜的材料包括钼、铝、钛、铌和氧化铟锡中的一种或多种。
附图说明
为了更清楚地说明本公开实施例的技术方案，下面将对实施例的附图作简单地介绍，显而易见地，下面描述中的附图仅仅涉及本公开的一些实施例，而非对本公开的限制。
图1为一种指纹识别模组发射超声波的示意图；
图2为一种指纹识别模组接收超声波的示意图；
图3为一种指纹识别模组进行指纹识别的示意图；
图4为一种指纹识别模组的结构示意图；
图5A为一种指纹识别模组中的压电层的扫描电镜图；
图5B为一种指纹识别模组中导电层上的光刻胶图案的扫描电镜图；
图5C为一种指纹识别模组中压电层上的多个第一驱动电极的扫描电镜图；
图6A为根据本公开一实施例提供的一种指纹识别模组沿第一方向的剖面示意图；
图6B为根据本公开一实施例提供的一种指纹识别模组沿第二方向的剖面示意图；
图6C为根据本公开一实施例提供的另一种指纹识别模组沿第二方向的剖面示意图；
图7为根据本公开一实施例提供的一种指纹识别模组的平面示意图；
图8为根据本公开一实施提供的另一种指纹识别模组的结构示意图；
图9为根据本公开一实施提供的另一种指纹识别模组的结构示意图；
图10A为根据本公开一实施例提供的另一种指纹识别模组沿第二方向的剖面示意图；
图10B为根据本公开一实施例提供的另一种指纹识别模组中驱动电极和接收电极的位置关系示意图；
图11为根据本公开一实施例提供的一种电子装置的结构示意图；以及
图12为根据本公开一实施例提供的一种指纹识别模组的制作方法的流程图。
具体实施方式
为使本公开实施例的目的、技术方案和优点更加清楚，下面将结合本公开实施例的附图，对本公开实施例的技术方案进行清楚、完整地描述。显然，所描述的实施例是本公开的一部分实施例，而不是全部的实施例。基于所描述的本公开的实施例，本领域普通技术人员在无需创造性劳动的前提下所获得的所有其他实施例，都属于本公开保护的范围。
除非另外定义，本公开使用的技术术语或者科学术语应当为本公开所属领域内具有一般技能的人士所理解的通常意义。本公开中使用的“第一”、“第二”以及类似的词语并不表示任何顺序、数量或者重要性，而只是用来区分不同的组成部分。“包括”或者“包含”等类似的词语意指出现该词前面的元件或者物件涵盖出现在该词后面列举的元件或者物件及其等同，而不排除其他元件或 者物件。“连接”或者“相连”等类似的词语并非限定于物理的或者机械的连接，而是可以包括电性的连接，不管是直接的还是间接的。
图1为一种指纹识别模组发射超声波的示意图；图2为一种指纹识别模组接收超声波的示意图。如图1所示，该指纹识别模组包括超声波传感器10；超声波传感器10包括上电极11、下电极12和位于上电极11和下电极12之间的压电层13；压电层13采用压电材料制作，可被电压激发产生逆压电效应。如图1所示，当上电极11和下电极12输入交变电压(AC电压)时(例如，上电极11接地，下电极12上施加交流方波)，压电层13因逆压电效应会发生形变或者带动压电层13的上方和下方的膜层一起振动，从而可产生超声波并向外发射。需要说明的是，当上电极11远离压电层13的一侧或者下电极12远离压电层13的一侧设置有空腔(例如空气腔)时，该超声波传感器发出的超声波会得到加强，从而可更好地将超声波发射出去。
如图2所示，超声波传感器10发出的超声波被指纹500反射，反射回来的超声波在压电层会转化为交变电压；此时，将上电极11接地，下电极12则可作为接收电极，接收压电层产生的交变电压。由于指纹500包括谷510和脊520，它们对于超声波的反射能力不同(谷510对超声波的反射能力较强)，导致被谷510和脊520反射回来的超声波的强度不同。因此，可通过接收电极接收到的交变电压判断该超声波是被谷还是脊反射的超声波。
图3为一种指纹识别模组进行指纹识别的示意图。如图3所示，该指纹识别模组包括上电极11、多个下电极12、位于上电极11和多个下电极12之间的压电层13、位于上电极11远离压电层13的一侧的基板80和位于多个下电极12远离压电层13的一侧的保护层90；下电极12、压电层13和多个上电极11组成的超声波传感器10可发射超声波也可接受超声波，也就是说，该超声波传感器10即作为超声波发射传感器又作为超声波接收传感器。当指纹与基板80接触时，超声波传感器10发射的超声波被指纹500反射，反射回来的超声波在压电层会转化为交变电压；此时，将上电极11接地，多个下电极12则可作为接收电极，从而实现在不同的位置接收压电层产生的交变电压。由于指纹500包括谷510和脊520，它们对于超声波的反射能力不同(谷510对超声波的反射能力较强)，导致被谷510和脊520反射回来的超声波的强度不同。因此，可通过多个下电极12接收到的交变电压来得到该指纹500中谷和脊的位置信息，从而可实现指纹识别。
图4为一种指纹识别模组的结构示意图。如图4所示，该指纹识别模组包括基板80、CMOS背板70、压电层13、多个第一驱动电极11和声波反射层15；CMOS背板70可包括接收电极和相应的驱动单元。在研究中，本申请的发明人注意到，在上述的指纹识别模组的制备过程中，需要在压电层远离CMOS背板的一侧形成导电层，然后在导电层远离压电层的一侧形成光刻胶图案，最后以光刻胶图案为掩膜对导电层进行刻蚀以形成上述的多个第一驱动电极。图5A为一种指纹识别模组中的压电层的扫描电镜图；图5B为一种指纹识别模组中导电层上的光刻胶图案的扫描电镜图；图5C为一种指纹识别模组中压电层上的多个第一驱动电极的扫描电镜图。如图5A和5B所示，由于压电层的边缘的坡度较大(90度左右)，在形成光刻胶图案的过程(曝光和显影)中，容易在压电层的边缘产生断线(PR断线)和光刻胶残留(PR残留)等不良；如图5C所示，由于压电层的边缘的坡度较大(90度左右)和光刻胶图案产生的断线和光刻胶残留等不良，后续刻蚀过程中也会使得导电层形成的多个条状驱动电极在压电层的边缘产生断线(Tx断线)或者导电层形成残留导电材料(Tx残留)，从而造成各种不良。
对此，本公开实施例提供一种指纹识别模组及其制作方法和电子装置。该指纹识别模组包括基板、压电材料层、辅助结构和多个第一驱动电极；压电材料层位于基板上，辅助结构至少部分位于基板上，多个第一驱动电极位于压电材料和辅助结构远离基板的一侧；各第一驱动电极沿第一方向延伸并超过压电材料层在第一方向上的第一边缘，多个第一驱动电极沿第二方向间隔设置，辅助结构至少与第一边缘接触设置，辅助结构包括斜坡部，在从第一边缘到远离压电材料层的中心的方向上，斜坡部在垂直于功能基板的方向上的厚度逐渐减小，第二方向与第一方向相交。在该指纹识别模组中，由于辅助结构与压电材料层的第一边缘接触设置，并且辅助结构包括斜坡部，因此在压电材料层上形成多个第一驱动电极的过程中可避免产生断线和导电材料残留等问题，从而可提高产品的良率。
下面，结合附图对本公开实施例提供的指纹识别模组、指纹识别模组的制作方法和电子装置进行详细的说明。
本公开一实施例提供的一种指纹识别模组。图6A为根据本公开一实施例提供的一种指纹识别模组沿第一方向的剖面示意图；图6B为根据本公开一实施例提供的一种指纹识别模组沿第二方向的剖面示意图。如图6A和图6B所 示，该指纹识别模组100包括功能基板110、压电材料层120、辅助结构130和多个第一驱动电极140；压电材料层120位于功能基板110上，辅助结构130至少部分位于功能基板110上；多个第一驱动电极140位于压电材料层120和辅助结构130远离功能基板110的一侧。如图6A所示，各第一驱动电极140沿第一方向延伸并超过压电材料层120在第一方向上的第一边缘121，也就是说，各第一驱动电极140跨过压电材料层120在第一方向上的第一边缘121；如图6B所示，多个第一驱动电极140沿第二方向间隔设置，多个第一驱动电极140相互绝缘设置。如图6A所示，辅助结构130至少与第一边缘121接触设置，并且包括斜坡部132；在从第一边缘121到远离压电材料层120的中心的方向上，斜坡部132在垂直于功能基板110的方向上逐渐减小，上述的第二方向与第一方向相交。需要说明的是，上述的压电材料层在第一方向上的第一边缘是指第一边缘的延伸方向与第一方向相交，而并第一边缘的延伸方向与第一方向平行。
在本公开实施例提供的指纹识别模组中，由于辅助结构至少与第一边缘接触设置，沿第一方向延伸并超过第一边缘的第一驱动电极从压电材料层延伸至辅助结构，而非直接从压电材料层延伸至功能基板上；另外，辅助结构包括斜坡部，在从第一边缘到远离压电材料层的中心的方向上，斜坡部的厚度逐渐减小。因此，在压电材料层上形成多个第一驱动电极的过程中，光刻胶在第一边缘可得到充分的曝光和显影，从而可有效地避免后续的刻蚀工艺中导电层产生断线问题，并且还可避免产生导电材料残留问题，从而避免相邻的两个第一驱动电极电性相连，从而可提高产品的良率。
在一些示例中，第一方向和第二方向相互垂直。在一些示例中，如图6A和图6B所示，斜坡部132的坡度角θ小于60度。如此设置，可更好地避免在形成多个第一驱动电极的过程中产生断线和导电材料残留等问题。
在一些示例中，如图6A和图6B所示，辅助结构130包括主体部134和重叠部136；主体部134位于功能基板110上且与压电材料层120同层设置；重叠部136与主体部134相连并位于压电材料层120的第一边缘121远离功能基板110的一侧。如此设置，辅助结构在避免第一驱动电极的形成过程中产生断线和导电材料残留等问题的同时，还可通过重叠部将压电材料层固定在功能基板上，从而防止压电材料层在制作和使用的过程中发生脱落。
在一些示例中，压电材料层的材料包括聚偏氟乙烯(PVDF)。由于聚偏氟 乙烯为含氟材料，与功能基板(例如氮化硅层)的粘附性较差，导致压电材料层容易脱落。因此，通过设置上述的重叠部，该指纹识别模组可有效地避免防止压电材料层在制作和使用的过程中发生脱落。另一方面，在剥离光刻胶图案(PR)的工艺中，光刻胶图案的剥离液成分通常包括N-甲基甲酰胺(NMF)和二乙二醇单甲醚，而聚偏氟乙烯溶解于N-甲基甲酰胺和醚类。因此，一方面，上述的辅助结构可在剥离光刻胶图案(PR)的工艺对压电材料层的边缘进行保护，防止光刻胶图案的剥离液腐蚀压电材料层，从而避免压电材料层脱离；另一方面，上述的辅助结构的重叠部可将压电材料层固定在功能基板上，从而进一步防止压电材料层在制作和使用的过程中发生脱落。
例如，如图6A和图6B所示，主体部134包括上述的斜坡部132。也就是说，斜坡部132为主体部134的一部分。
在一些示例中，重叠部136在第一方向上的尺寸大于200微米。根据实验结果，当重叠部在第一方向上的尺寸大于200微米时，辅助结构可有效地避免防止压电材料层在制作和使用的过程中发生脱落。例如，重叠部在第一方向上的尺寸可为400、600、800、1000或1500微米。
在一些示例中，辅助结构的材料包括固化胶。由此，在形成辅助结构的过程中，在涂覆固化胶之后和固化辅助结构之前，因具有一定的流动性或延展性，固化胶会经过一个流平的过程，从而自然地形成上述的斜坡部，从而无需额外的工艺步骤，从而可降低制作难度和成本。例如，当辅助结构采用固化胶时，形成的斜坡部的坡度角为45度左右。
在一些示例中，辅助结构的材料包括光学固化胶(OC胶)。由此，该辅助结构可直接通过曝光工艺进行图案化，而不用使用掩膜工艺，从而进一步降低制作成本。例如，辅助结构的材料可为丙烯酸酯体系材料。
在一些示例中，如图6A和图6B所示，指纹识别模组100还包括第一绝缘层151和声波反射层160；第一绝缘层151位于多个第一驱动电极140远离功能基板110的一侧；声波反射层160位于第一绝缘层151远离多个第一驱动电极140的一侧，声波反射层160在功能基板110上的正投影与压电材料层120在功能基板110上的正投影重叠。如此设置，声波反射层160可将压电材料层120产生的向声波反射层160传播的超声波向功能基板110所在的位置反射，从而有利于增强发出的超声波的强度或能量。
例如，声波反射层160可采用银(Ag)制作，第一绝缘层151可采用氮化 硅(SiNx)制作。当然，本公开实施例包括但不限于此，声波反射层也可采用其他具有反射超声波的特性的材料制作，第一绝缘层也可采用树脂等其他绝缘材料制作。
在一些示例中，如图6A和图6B所示，功能基板110包括接收电极层170、驱动电路层180和基板190；接收电极层170位于压电材料层120靠近基板190的一侧且包括多个接收电极175；驱动电路层180位于接收电极170靠近基板190的一侧且包括多个驱动单元185，多个接收电极175与多个驱动单元185一一对应设置，多个驱动单元185被配置为驱动多个接收电极175接收压电材料层120产生的电信号。多个接收电极175在基板190上的正投影与压电材料层120在基板110上的正投影至少部分重叠；多个接收电极175在基板190上的正投影与多个第一驱动电极140在基板190上的正投影至少部分重叠，从而可与第一驱动电极140和压电材料层120形成多个超声波接收元件。
例如，如图6A和图6B所示，多个接收电极170之间设置有绝缘层以确保相互绝缘；类似地，多个驱动单元185之间也设置有绝缘层以相互绝缘。
在本实施例提供的指纹识别模组中，设置在压电材料层上的多个第一驱动电极、压电材料层和多个接收电极可构成多个超声波发射元件；多个接收电极、压电材料层和多个第一驱动电极可构成多个超声波接收元件。当该指纹识别模组进行指纹识别时，可将多个接收电极接地，然后分别向沿多个第一驱动电极施加交变电压，与第一驱动电极对应的压电材料层因逆压电效应会发生形变或者带动压电材料层的上方和下方的膜层一起振动，从而可产生超声波并向外发射。由于该指纹识别模组的第一驱动电极层包括多个第一驱动电极，可构成多个超声波发射元件，从而通过分别驱动上述的多个第一驱动电极来实现超声波的聚焦，一方面可提高发出的超声波在特定区域或特定方向的强度或能量，从而提高该指纹识别性能，另一方面可使得发出的超声波具有较好的方向性，从而可降低指纹的谷和脊之间的串扰，进而可提高指纹识别性能。当发出的超声波被指纹反射回该指纹识别模组时，多个接收电极对应的多个超声波接收元件可接收反射回来的超声波，并将该超声波信号转化为电信号，从而实现指纹识别。另外，当该指纹识别模组通过实现超声波的聚焦来提高发出的超声波在特定区域或特定方向的强度或能量时，该指纹识别模组不仅可实现指纹识别，还可穿透手指，分辨该指纹是否为真的皮肤。
在一些示例中，如图6A和图6B所示，接收电极175与压电材料层120 可接触设置，从而更好地接收电信号。当然，本公开实施例包括但不限于此。
图6C为根据本公开一实施例提供的另一种指纹识别模组沿第二方向的剖面示意图。如图6C所示，功能基板110还包括：第二绝缘层152，位于接收电极层170与压电材料层120之间。第二绝缘层152可降低极化时压电材料层120产生的漏电流对与接收电极175相连的驱动单元185中的薄膜晶体管的影响。例如，第二绝缘层也可采用氮化硅(SiNx)制作。
在一些示例中，基板190包括玻璃基板。
在一些示例中，基板190包括聚酰亚胺基板。由此，基板190可制作得较薄，基板190的厚度范围为5-20微米。需要说明的是，当基板190为聚酰亚胺基板时，可先在玻璃基板上形成聚酰亚胺层，然后在聚酰亚胺层形成接收电极层、压电材料层、第一驱动电极层等层结构，最后再将玻璃基板去除，从而得到该示例所描述的指纹识别模组。
图7为根据本公开一实施例提供的一种指纹识别模组的平面示意图。如图7所示，辅助结构130沿着压电材料120的边缘设置，辅助结构130与压电材料层120在第二方向上的第二边缘122也接触设置。如此设置，辅助结构可在剥离光刻胶图案(PR)的工艺中对压电材料层的边缘进行全方位的保护，更好地防止光刻胶图案的剥离液腐蚀压电材料层，从而更好地避免压电材料层脱离。当然，本公开实施例包括但不限于此，辅助结构也可仅设置在压电材料沿第一方向上的第一边缘。需要说明的是，上述的压电材料层在第二方向上的第二边缘是指第二边缘的延伸方向与第二方向相交，而并第二边缘的延伸方向与第二方向平行。
例如，如图7所示，压电材料层120在功能基板110上的正投影的形状可包括矩形，例如正方形。辅助结构130沿着压电材料层120的四个边缘设置。当然，本公开实施例包括但不限于此，压电材料层的形状可根据实际需求进行设置；辅助结构也可仅设置在压电材料层在第一方向上的第一边缘。
图8为根据本公开一实施提供的另一种指纹识别模组的结构示意图。如图8所示，各第一驱动电极140包括沿垂直于功能基板的方向上依次层叠的金属层142和透明金属氧化物层144。由于光刻胶图案的剥离液成分通常包括N-甲基甲酰胺(NMF)和二乙二醇单甲醚，而聚偏氟乙烯溶解于N-甲基甲酰胺和醚类。因此，上述的透明金属氧化物层可在形成第一驱动电极的过程中作为掩膜，从而避免光刻胶图案的剥离液腐蚀压电材料层。需要说明的是，通常的 透明金属氧化物层的刻蚀液不能刻蚀金属层，金属层的刻蚀液不能刻蚀透明金属氧化物层，因此透明金属氧化物层可作为掩膜对金属层进行刻蚀。
下面，通过具体的第一驱动电极的制作过程对此进行说明。例如，在压电材料层和辅助结构远离功能基板的一侧形成多个第一驱动电极包括以下步骤：在压电材料层和辅助结构远离功能基板的一侧形成金属层；在金属层远离压电材料层的一侧形成透明金属氧化物层；在透明金属氧化物层远离金属层的一侧形成光刻胶图案，以光刻胶图案为掩膜对透明金属氧化物层进行图案化以形成多个条状透明金属氧化物；剥离上述的光刻胶图案；以及以多个条状透明金属氧化物为掩膜对金属层进行刻蚀以形成多个第一驱动电极。可见，在上述的制作过程中，在剥离光刻胶图案时，金属层仍然覆盖着压电材料层，从而可避免剥离液和压电材料层接触。因此可避免光刻胶图案的剥离液腐蚀压电材料层。
例如，上述的透明金属氧化物可包括氧化铟锡(ITO)。当然，本公开实施例包括但不限于此，上述的透明金属氧化物也可为其他具体的材料。
在一些示例中，上述透明金属氧化物层的厚度范围为
Figure PCTCN2020072849-appb-000001
由于压电材料层通常为表面粗糙的多孔材料，导致金属层的表面会出现凹凸不平的现象，如此设置，透明金属氧化物层可更好地覆盖金属层。
图9为根据本公开一实施提供的另一种指纹识别模组的结构示意图。如图9所示，该指纹识别模组100包括功能基板110、压电材料层120、辅助结构130和多个第一驱动电极140；压电材料层120位于功能基板110上，辅助结构130至少部分位于功能基板110上；多个第一驱动电极140位于压电材料层120和辅助结构130远离功能基板110的一侧。各第一驱动电极140沿第一方向延伸并超过压电材料层120在第一方向上的第一边缘121；多个第一驱动电极140沿第二方向间隔设置，多个第一驱动电极140相互绝缘设置。辅助结构130与第一边缘121接触设置，并且包括斜坡部132；在从第一边缘121到远离压电材料层120的中心的方向上，斜坡部132在垂直于功能基板110的方向上的厚度逐渐减小。如图9所示，辅助结构130仅包括位于功能基板110上且与压电材料层120同层设置的主体部134，而不包括重叠部136。如此设置，该辅助结构可有效地避免后续的刻蚀工艺中导电层产生断线问题，并且还可避免产生导电材料残留问题，从而避免相邻的两个第一驱动电极电性相连，从而可提高产品的良率。另外，虽然没有设置重叠部，该辅助结构可在剥离光刻胶图案(PR)的工艺对压电材料层的边缘进行保护，从而可起到避免压电材料层 脱离的作用。
本公开一实施例提供一种指纹识别模组。图10A为根据本公开一实施例提供的另一种指纹识别模组沿第二方向的剖面示意图；图10B为根据本公开一实施例提供的另一种指纹识别模组中驱动电极和接收电极的位置关系示意图。如图10A所示，指纹识别模组100包括功能基板110、压电材料层120、辅助结构130和多个第一驱动电极140；压电材料层120位于功能基板110上，辅助结构130至少部分位于功能基板110上；多个第一驱动电极140位于压电材料层120和辅助结构130远离功能基板110的一侧。功能基板110包括基板接收电极层170、驱动电路层180和基板190；接收电极层170位于压电材料层120靠近基板190的一侧且包括多个接收电极175；驱动电路层180位于接收电极170靠近基板190的一侧且包括多个驱动单元185，多个接收电极175与多个驱动单元185一一对应设置，多个驱动单元185被配置为驱动多个接收电极175接收压电材料层120产生的电信号。多个接收电极175在基板190上的正投影与压电材料层120在基板110上的正投影至少部分重叠。
如图10A和图10B所示，功能基板110还包括多个第二驱动电极240，位于接收电极层170与驱动电路层180之间，多个第一驱动电极140和多个第二驱动电极240形成多个驱动电极对40，各驱动电极对40中的第一驱动电极140和第二驱动电极240在压电材料层120上的正投影至少部分重叠。如此设置，各驱动电极对中的第一驱动电极和第二驱动电极和压电材料层可构成一个超声波发射元件，从而可实现超声波发射。并且，该指纹识别模组还可在第一驱动电极上施加第一驱动电压(例如+50V)，在第二驱动电极上施加极性相反的第二驱动电压(例如-50V)，从而实现以较低的驱动电压(绝对值)实现对压电材料层的高压驱动或高压激励。由此，该指纹识别模组由于可实现以较低的驱动电压(绝对值)实现对压电材料层的高压驱动或高压激励，一方面可大大地降低因高压导致的驱动单元中的电子元器件(例如薄膜晶体管)被击穿的风险，从而提高了产品的稳定性和耐用性，另一方面还有利于实现大尺寸的指纹识别模组。需要说明的是，由于接收电极与驱动单元电性相连，接收电极上不能直接施加驱动电压，因此本示例提供的指纹识别模组巧妙地设置了多个第二驱动电极并与多个第一驱动电极形成多个驱动电极对以实现以较低的驱动电压(绝对值)实现对压电材料层的高压驱动或高压激励。
在一些示例中，如图10B所示，多个接收电极175沿第一方向和第二方向 阵列设置，多个第一驱动电极140沿第二方向排列，第二驱动电极240沿第二方向排列，各第一驱动电极140和各第二驱动电极240均为沿第一方向延伸的条状电极。
在一些示例中，如图10A和10B所示，各第二驱动电极240在压电材料层120上的正投影与沿第一方向排列的多个接收电极175在压电材料层120上的正投影至少部分重叠。指纹识别模组100还包括多个连接电极250，各第二驱动电极240包括多个通孔245，多个连接电极250分别设置在多个通孔245中并将多个接收电极175与多个驱动单元185分别电性相连。如此设置，接收电极可更好地接收压电材料层因接收到超声波而产生的电信号，从而可提高指纹识别的精度。
本公开一实施例还提供一种电子装置。图11为根据本公开一实施例提供的一种电子装置的结构示意图。如图11所示，该电子装置300包括上述的指纹识别模组100。由此，该电子装置可实现指纹识别功能。并且，由于其包括的指纹识别模组可有效地避免后续的刻蚀工艺中导电层产生断线和导电材料残留问题，因此该电子装置具有较好的良率和性能。
例如，在一些示例中，如图11所示，该显示装置300还包括显示模组310，显示模组310的面积与指纹识别模组100的面积大致相同，从而可实现全屏指纹识别。此时，该指纹识别模组还可实现触控功能，从而可不用设置额外的触控装置，例如，电容式触控面板，从而可降低该显示装置的成本。当然，本公开实施例包括但不限于此，显示模组的面积与指纹识别模组的面积也可不相等，指纹识别模组可仅设置在需要进行指纹识别的区域。
在一些示例中，该电子装置可为显示装置。例如，该显示装置可为电视机、手机、电脑、笔记本电脑、电子相册、导航仪等具有显示功能的电子设备。
本公开一实施例还挺一种指纹识别模组的制作方法。图12为根据本公开一实施例提供的一种指纹识别模组的制作方法的流程图。如图12所示，该指纹识别模组的制作方法包括以下步骤S101-S104。
步骤S101：提供功能基板。
步骤S102：在功能基板上形成压电材料层。例如，压电材料层可采用聚偏氟乙烯(PVDF)等压电电压常数较高的压电材料制作。
步骤S103：在形成有压电材料层的功能基板上形成辅助结构。
步骤S104：在压电材料层和辅助结构远离功能基板的一侧形成多个第一驱 动电极，各第一驱动电极沿第一方向延伸并超过压电材料层在第一方向上的第一边缘，多个第一驱动电极沿第二方向间隔设置，辅助结构至少与第一边缘接触设置，辅助结构包括斜坡部，在从第一边缘到远离压电材料层的中心的方向上，斜坡部在垂直于功能基板的方向上的厚度逐渐减小，第二方向与第一方向相交。
在本公开实施例提供的指纹识别模组的制作方法中，由于辅助结构至少与第一边缘接触设置，沿第一方向延伸并超过第一边缘的第一驱动电极从压电材料层延伸至辅助结构，而非直接从压电材料层延伸至功能基板上；另外，辅助结构包括斜坡部，在从第一边缘到远离压电材料层的中心的方向上，斜坡部的厚度逐渐减小。因此，在压电材料层上形成多个第一驱动电极的过程中，光刻胶在第一边缘可得到充分的曝光和显影，从而可有效地避免后续的刻蚀工艺中导电层产生断线问题，并且还可避免产生导电材料残留问题，从而避免相邻的两个第一驱动电极电性相连，从而可提高产品的良率。
在一些示例中，在形成有压电材料层的功能基板上形成辅助结构包括：在形成有压电材料层的功能基板上涂覆液态固化胶；对液体固化胶进行图案化以至少暴露部分压电材料层；以及对液态固化胶进行固化，液态固化胶经过流平和固化以形成斜坡部。由此，在形成辅助结构的过程中，在液态固化胶具有一定的流动性或延展性，液态固化胶会经过一个流平的过程，从而自然地形成上述的斜坡部，从而无需额外的工艺步骤，从而可降低制作难度和成本。
例如，上述的第一方向和第二方向可相互垂直。
在一些示例中，辅助结构的材料包括光学固化胶(OC胶)。由此，对液体固化胶进行图案化以至少暴露部分压电材料层的步骤可直接通过曝光工艺进行图案化，而不用使用掩膜工艺，从而进一步降低制作成本。例如，辅助结构的材料可为丙烯酸酯体系材料。
例如，可采用热固化的方式对液态固化胶进行固化。当然，本公开实施例包括但不限于此，也可采用其他固化方式对液态固化胶进行固化。
例如，辅助结构的材料可采用可低温固化的材料；例如，固化温度小于130摄氏度。如此设置，可避免高温对指纹识别模组的其他结构产生不利影响。
在一些示例中，在形成有压电材料层的功能基板上形成辅助结构包括：对液体固化胶进行图案化以至少暴露部分压电材料层以形成位于功能基板上且与压电材料层同层设置的主体部和与主体部相连且位于压电材料层的第一边 缘远离功能基板的一侧的重叠部。如此设置，辅助结构在避免第一驱动电极的形成过程中产生断线和导电材料残留等问题的同时，还可通过重叠部将压电材料层固定在功能基板上，从而防止压电材料层在制作和使用的过程中发生脱落。
在一些示例中，当压电材料层的材料包括聚偏氟乙烯(PVDF)时，由于聚偏氟乙烯为含氟材料，与功能基板(例如氮化硅层)的粘附性较差，导致压电材料层容易脱落。因此，通过形成上述的重叠部，该指纹识别模组的制作方法可有效地避免防止压电材料层在制作过程中发生脱落。另一方面，在剥离光刻胶图案(PR)的工艺中，光刻胶图案的剥离液成分通常包括N-甲基甲酰胺(NMF)和二乙二醇单甲醚，而聚偏氟乙烯溶解于N-甲基甲酰胺和醚类。因此，一方面，上述的辅助结构可在剥离光刻胶图案(PR)的工艺对压电材料层的边缘进行保护，防止光刻胶图案的剥离液腐蚀压电材料层，从而避免压电材料层脱离；另一方面，上述的辅助结构的重叠部可将压电材料层固定在功能基板上，从而进一步防止压电材料层在制作过程中发生脱落。
在一些示例中，重叠部在第一方向上的尺寸大于200微米。根据实验结果，当重叠部在第一方向上的尺寸大于200微米时，辅助结构可有效地避免防止压电材料层在制作和使用的过程中发生脱落。例如，重叠部在第一方向上的尺寸可为400、600、800、1000或1500微米。
在一些示例中，在压电材料层和辅助结构远离功能基板的一侧形成多个第一驱动电极包括：在压电材料层和辅助结构远离功能基板的一侧形成金属层；在金属层远离压电材料层的一侧形成透明金属氧化物层；对透明金属氧化物层进行图案化以形成多个条状透明金属氧化物；以及以多个条状透明金属氧化物为掩膜对金属层进行刻蚀以形成多个第一驱动电极。由此，在剥离光刻胶图案时，金属层仍然覆盖着压电材料层，因此可避免光刻胶图案的剥离液腐蚀压电材料层。
例如，对透明金属氧化物层进行图案化以形成多个条状透明金属氧化物包括：在透明金属氧化物层远离金属层的一侧形成光刻胶图案；以光刻胶图案为掩膜对透明金属氧化物层进行图案化以形成多个条状透明金属氧化物；以及剥离上述的光刻胶图案。可见，在上述的制作过程中，在剥离光刻胶图案时，金属层仍然覆盖着压电材料层，因此可避免光刻胶图案的剥离液腐蚀压电材料层。
例如，上述的透明金属氧化物可包括氧化铟锡(ITO)。
在一些示例中，上述透明金属氧化物层的厚度范围为
Figure PCTCN2020072849-appb-000002
由于压电材料层通常为表面粗糙的多孔材料，导致金属层的表面会出现凹凸不平的现象，如此设置，透明金属氧化物层可更好地覆盖金属层。
在一些示例中，在功能基板上形成压电材料层包括：在功能基板上涂覆压电材料并晶化；在晶化后的压电材料上形成硬掩膜；以及以硬掩膜为掩膜对晶化后的压电材料进行刻蚀以形成压电材料层，硬掩膜的材料包括钼、铝、钛、铌和氧化铟锡中的一种或多种。由此，通过采用硬掩膜也可在一定程度上放置光刻胶图案的剥离液腐蚀压电材料层，以提高压电材料层的质量，从而提高该指纹识别模组的性能。
有以下几点需要说明：
(1)本公开实施例附图中，只涉及到与本公开实施例涉及到的结构，其他结构可参考通常设计。
(2)在不冲突的情况下，本公开同一实施例及不同实施例中的特征可以相互组合。
以上，仅为本公开的具体实施方式，但本公开的保护范围并不局限于此，任何熟悉本技术领域的技术人员在本公开揭露的技术范围内，可轻易想到变化或替换，都应涵盖在本公开的保护范围之内。因此，本公开的保护范围应以权利要求的保护范围为准。

Claims (20)

  1. 一种指纹识别模组，包括：
    功能基板；
    压电材料层，位于所述功能基板上；
    辅助结构，至少部分位于所述功能基板上；以及
    多个第一驱动电极，位于所述压电材料层和所述辅助结构远离所述功能基板的一侧，
    其中，各所述第一驱动电极沿第一方向延伸并超过所述压电材料层在所述第一方向上的第一边缘，所述多个第一驱动电极沿第二方向间隔设置，所述辅助结构至少与所述第一边缘接触设置，所述辅助结构包括斜坡部，在从所述第一边缘到远离所述压电材料层的中心的方向上，所述斜坡部在垂直于所述功能基板的方向上的厚度逐渐减小，所述第二方向与所述第一方向相交。
  2. 根据权利要求1所述的指纹识别模组，其中，所述斜坡部的坡度角小于60度。
  3. 根据权利要求1所述的指纹识别模组，其中，所述辅助结构包括：
    主体部，位于所述功能基板上且与所述压电材料层同层设置；以及
    重叠部，与所述主体部相连并位于所述压电材料层的所述第一边缘远离所述功能基板的一侧。
  4. 根据权利要求3所述的指纹识别模组，其中，所述重叠部在所述第一方向上的尺寸大于200微米。
  5. 根据权利要求1-4中任一项所述的指纹识别模组，其中，所述辅助结构的材料包括固化胶。
  6. 根据权利要求1-5中任一项所述的指纹识别模组，其中，所述辅助结构的材料包括光学固化胶。
  7. 根据权利要求1-6中任一项所述的指纹识别模组，其中，所述压电材料层的材料包括聚偏氟乙烯。
  8. 根据权利要求1-7中任一项所述的指纹识别模组，其中，所述辅助结构沿着所述压电材料的边缘设置，所述辅助结构与所述压电材料层在所述第二方向上的第二边缘也接触设置。
  9. 根据权利要求1-8中任一项所述的指纹识别模组，其中，各所述第一 驱动电极包括沿垂直于功能基板的方向上依次层叠的金属层和透明金属氧化物层。
  10. 根据权利要求1-9中任一项所述的指纹识别模组，还包括：
    第一绝缘层，位于所述多个第一驱动电极远离所述功能基板的一侧；以及
    声波反射层，位于所述第一绝缘层远离所述多个第一驱动电极的一侧，
    其中，所述声波反射层在所述功能基板上的正投影与所述压电材料层在所述功能基板上的正投影重叠。
  11. 根据权利要求1-10中任一项所述的指纹识别模组，其中，所述功能基板包括：
    基板；
    接收电极层，位于所述压电材料层靠近所述基板的一侧且包括多个接收电极；以及
    驱动电路层，位于所述接收电极靠近所述基板的一侧且包括多个驱动单元，
    其中，所述多个接收电极在所述基板上的正投影与所述压电材料层在所述基板上的正投影至少部分重叠，所述多个接收电极在所述基板上的正投影与所述多个第一驱动电极在所述基板上的正投影至少部分重叠。
  12. 根据权利要求11所述的指纹识别模组，其中，所述功能基板还包括：
    第二绝缘层，位于所述接收电极层与所述压电材料层之间。
  13. 根据权利要求11所述的指纹识别模组，其中，所述功能基板还包括：
    多个第二驱动电极，位于所述接收电极层与所述驱动电路层之间，
    其中，所述多个第一驱动电极和所述多个第二驱动电极形成多个驱动电极对，各所述驱动电极对中的所述第一驱动电极和所述第二驱动电极在所述压电材料层上的正投影至少部分重叠。
  14. 一种电子装置，包括根据权利要求1-13中任一项所述的指纹识别模组。
  15. 一种指纹识别模组的制作方法，包括：
    提供功能基板；
    在所述功能基板上形成压电材料层；
    在形成有所述压电材料层的所述功能基板上形成辅助结构；以及
    在所述压电材料层和所述辅助结构远离所述功能基板的一侧形成多个第 一驱动电极，
    其中，各所述第一驱动电极沿第一方向延伸并超过所述压电材料层在第一方向上的第一边缘，所述多个第一驱动电极沿第二方向间隔设置，所述辅助结构至少与所述第一边缘接触设置，所述辅助结构包括斜坡部，在从所述第一边缘到远离所述压电材料层的中心的方向上，所述斜坡部的厚度逐渐减小，所述斜坡部在垂直于所述功能基板的方向上的厚度逐渐减小，所述第二方向与所述第一方向相交。
  16. 根据权利要求15所述的指纹识别模组的制作方法，其中，在形成有所述压电材料层的所述功能基板上形成辅助结构包括：
    在形成有所述压电材料层的所述功能基板上涂覆液态固化胶；
    对所述液体固化胶进行图案化以至少暴露部分所述压电材料层；以及
    对所述液态固化胶进行固化，
    其中，所述液态固化胶经过流平和固化以形成所述斜坡部。
  17. 根据权利要求16所述的指纹识别模组的制作方法，其中，在形成有所述压电材料层的所述功能基板上形成辅助结构包括：
    对所述液体固化胶进行图案化以至少暴露部分所述压电材料层以形成位于所述功能基板上且与所述压电材料层同层设置的主体部和与所述主体部相连且位于所述压电材料层的所述第一边缘远离所述功能基板的一侧的重叠部。
  18. 根据权利要求17所述的指纹识别模组的制作方法，其中，所述重叠部在所述第一方向上的尺寸大于200微米。
  19. 根据权利要求15-18中任一项所述的指纹识别模组的制作方法，其中，在所述压电材料层和所述辅助结构远离所述功能基板的一侧形成多个第一驱动电极包括：
    在所述压电材料层和所述辅助结构远离所述功能基板的一侧形成金属层；
    在所述金属层远离所述压电材料层的一侧形成透明金属氧化物层；
    对所述透明金属氧化物层进行图案化以形成多个条状透明金属氧化物；以及
    以所述多个条状透明金属氧化物为掩膜对所述金属层进行刻蚀以形成所述多个第一驱动电极。
  20. 根据权利要求15-18中任一项所述的指纹识别模组的制作方法，其中，在所述功能基板上形成压电材料层包括：
    在所述功能基板上涂覆压电材料并晶化；
    在晶化后的所述压电材料上形成硬掩膜；以及
    以所述硬掩膜为掩膜对晶化后的所述压电材料进行刻蚀以形成所述压电材料层，
    其中，所述硬掩膜的材料包括钼、铝、钛、铌和氧化铟锡中的一种或多种。
PCT/CN2020/072849 2019-01-28 2020-01-17 指纹识别模组及其制作方法和电子装置 Ceased WO2020156257A1 (zh)

Priority Applications (5)

Application Number Priority Date Filing Date Title
JP2020564385A JP7456943B2 (ja) 2019-01-28 2020-01-17 指紋認識モジュール及びその作製方法並びに電子装置
EP20749056.6A EP3920085B1 (en) 2019-01-28 2020-01-17 Fingerprint identification module and manufacturing method therefor, and electronic apparatus
US16/966,394 US11442583B2 (en) 2019-01-28 2020-01-17 Fingerprint identification module, manufacturing method thereof and electronic device
CN202080000036.3A CN111758102B (zh) 2019-01-28 2020-01-17 指纹识别模组及其制作方法和电子装置
CN202010413415.7A CN113139412B (zh) 2019-01-28 2020-05-15 指纹识别传感器、显示面板和指纹识别传感器的制作方法

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
CN201910082585.9 2019-01-28
CN201910082585.9A CN109829419B (zh) 2019-01-28 2019-01-28 指纹识别模组及其驱动方法和制作方法、显示装置
CNPCT/CN2019/105749 2019-09-12
PCT/CN2019/105749 WO2020155645A1 (zh) 2019-01-28 2019-09-12 指纹识别模组及其驱动方法、制作方法、显示装置

Publications (1)

Publication Number Publication Date
WO2020156257A1 true WO2020156257A1 (zh) 2020-08-06

Family

ID=66862652

Family Applications (3)

Application Number Title Priority Date Filing Date
PCT/CN2019/105749 Ceased WO2020155645A1 (zh) 2019-01-28 2019-09-12 指纹识别模组及其驱动方法、制作方法、显示装置
PCT/CN2020/072849 Ceased WO2020156257A1 (zh) 2019-01-28 2020-01-17 指纹识别模组及其制作方法和电子装置
PCT/CN2020/072806 Ceased WO2020156249A1 (zh) 2019-01-28 2020-01-17 指纹识别模组及其驱动方法和电子装置

Family Applications Before (1)

Application Number Title Priority Date Filing Date
PCT/CN2019/105749 Ceased WO2020155645A1 (zh) 2019-01-28 2019-09-12 指纹识别模组及其驱动方法、制作方法、显示装置

Family Applications After (1)

Application Number Title Priority Date Filing Date
PCT/CN2020/072806 Ceased WO2020156249A1 (zh) 2019-01-28 2020-01-17 指纹识别模组及其驱动方法和电子装置

Country Status (5)

Country Link
US (3) US11487389B2 (zh)
EP (2) EP3920080B1 (zh)
JP (1) JP7456943B2 (zh)
CN (5) CN109829419B (zh)
WO (3) WO2020155645A1 (zh)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN113506514A (zh) * 2021-07-08 2021-10-15 京东方科技集团股份有限公司 显示基板及其制作方法、显示面板、显示装置

Families Citing this family (51)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN109829419B (zh) * 2019-01-28 2021-08-24 京东方科技集团股份有限公司 指纹识别模组及其驱动方法和制作方法、显示装置
CN111695388B (zh) * 2019-03-15 2024-05-17 京东方科技集团股份有限公司 指纹识别结构及其驱动方法、显示装置
CN110201872B (zh) 2019-06-17 2021-08-27 京东方科技集团股份有限公司 一种检测面板、显示装置、检测面板驱动方法和制作方法
CN110232363B (zh) 2019-06-18 2021-12-07 京东方科技集团股份有限公司 超声波指纹识别传感器及其制备方法、显示装置
CN110245636B (zh) * 2019-06-20 2021-08-10 京东方科技集团股份有限公司 一种指纹识别模组、显示面板、显示装置和指纹识别方法
CN110265544A (zh) 2019-06-24 2019-09-20 京东方科技集团股份有限公司 压电传感器及制备方法、进行指纹识别的方法及电子设备
CN110287871B (zh) * 2019-06-25 2021-04-27 京东方科技集团股份有限公司 一种指纹识别器件及其驱动方法、显示装置
CN112181187B (zh) 2019-07-04 2022-04-15 京东方科技集团股份有限公司 一种超声感应电路及其驱动方法，以及显示装置
CN110458135B (zh) * 2019-08-19 2022-04-15 京东方科技集团股份有限公司 一种超声波传感器及其制备方法、显示装置
CN110472606B (zh) 2019-08-21 2022-05-20 京东方科技集团股份有限公司 一种超声波识别模组、其驱动方法及显示装置
CN112418201B (zh) * 2019-08-22 2025-05-13 京东方科技集团股份有限公司 指纹识别模组及其驱动方法和显示装置
US20220004729A1 (en) * 2019-08-29 2022-01-06 Boe Technology Group Co., Ltd. Fingerprint identification circuit and driving method thereof, fingerprint identification module, and display device
CN112507761B (zh) * 2019-09-16 2024-07-16 京东方科技集团股份有限公司 一种指纹识别模组及其驱动方法、显示装置
CN112633036B (zh) * 2019-09-24 2024-07-26 京东方科技集团股份有限公司 一种指纹识别模组的制作方法、指纹识别模组及显示装置
WO2021081776A1 (zh) * 2019-10-29 2021-05-06 南昌欧菲生物识别技术有限公司 超声波指纹模组及其制作方法和电子设备
CN110765968B (zh) * 2019-10-30 2022-09-09 京东方科技集团股份有限公司 一种指纹识别模组、显示装置及其制作方法
CN110837820B (zh) * 2019-11-26 2022-05-31 厦门天马微电子有限公司 一种阵列基板及显示面板
CN111046851B (zh) * 2019-12-31 2023-05-30 宁波星宏智能技术有限公司 一种指纹触摸智能开关出产前指纹识别检测装置
WO2021159392A1 (zh) * 2020-02-13 2021-08-19 京东方科技集团股份有限公司 指纹识别模组及其驱动方法、显示装置
CN111368689B (zh) * 2020-02-28 2024-02-02 京东方科技集团股份有限公司 纹理检测模组及其驱动方法、和显示装置
CN111539304B (zh) * 2020-04-20 2024-02-02 京东方科技集团股份有限公司 超声波指纹识别组件及其制备方法、识别方法、显示装置
CN111524461A (zh) * 2020-04-27 2020-08-11 武汉华星光电半导体显示技术有限公司 一种显示模组及其制备方法
CN111597989B (zh) 2020-05-15 2024-06-14 京东方科技集团股份有限公司 超声波纹路识别组件及制备方法、显示装置
CN111446359B (zh) * 2020-05-15 2023-05-30 京东方科技集团股份有限公司 一种压电器件及其制作方法、电子装置及控制方法
CN113822101B (zh) * 2020-06-19 2025-01-24 京东方科技集团股份有限公司 指纹识别结构及其驱动方法、电子装置
CN111782090B (zh) * 2020-06-30 2024-02-02 京东方科技集团股份有限公司 显示模组、超声波触控检测方法、超声波指纹识别方法
CN113869089B (zh) * 2020-06-30 2025-05-09 京东方科技集团股份有限公司 超声波传感器、超声波传感器的制备方法和显示装置
CN114092976B (zh) * 2020-07-30 2025-05-06 京东方科技集团股份有限公司 指纹识别单元及其制备方法、指纹识别模组和显示装置
CN114616600A (zh) * 2020-09-29 2022-06-10 京东方科技集团股份有限公司 指纹识别方法及装置、设备、显示装置、存储介质
CN112181208B (zh) * 2020-10-30 2023-06-02 业泓科技(成都)有限公司 触控辨识装置、显示装置及其制造方法
CN112560654B (zh) * 2020-12-10 2024-07-26 京东方科技集团股份有限公司 一种超声波指纹识别方法、装置、设备及显示装置
CN112733790B (zh) 2021-01-21 2022-11-08 厦门天马微电子有限公司 指纹识别模组、显示面板及其驱动方法、显示装置
CN113011264B (zh) * 2021-02-22 2024-02-02 业泓科技(成都)有限公司 辨识传感结构、指纹识别组件及终端
US11573665B2 (en) * 2021-03-31 2023-02-07 Apple Inc. Beamforming optimization for segmented thin-film acoustic imaging systems incorporated in personal portable electronic devices
CN113723167B (zh) * 2021-04-02 2024-07-02 荣耀终端有限公司 一种指纹识别方法及电子设备
US11816919B2 (en) * 2021-06-04 2023-11-14 Synaptics Incorporated Sensor device for transcapacitive sensing with shielding
US11519801B1 (en) * 2021-06-04 2022-12-06 Synaptics Incorporated Sensor device for transcapacitive sensing with shielding
CN113486832B (zh) 2021-07-15 2024-05-28 维沃移动通信有限公司 显示模组和电子设备
CN113867572B (zh) * 2021-10-09 2024-01-23 武汉天马微电子有限公司 显示面板及显示装置
US12585361B2 (en) 2021-12-22 2026-03-24 Apple Inc. Touch input devices
WO2023121885A1 (en) * 2021-12-22 2023-06-29 Apple Inc. Touch input devices
CN114708624B (zh) * 2022-04-11 2025-09-16 京东方科技集团股份有限公司 超声波指纹识别模组及其制作方法、显示面板、显示装置
CN114780937B (zh) * 2022-04-24 2025-09-16 京东方科技集团股份有限公司 一种超声检测模组、制作方法、驱动方法和显示装置
CN115019355B (zh) * 2022-06-29 2025-06-27 京东方科技集团股份有限公司 显示装置及其控制方法和可读存储介质
WO2024010506A1 (en) * 2022-07-05 2024-01-11 Fingerprint Cards Anacatum Ip Ab Biometric imaging device and method for manufacturing the biometric imaging device
WO2024010507A1 (en) * 2022-07-05 2024-01-11 Fingerprint Cards Anacatum Ip Ab Biometric imaging device and method for manufacturing the biometric imaging device
CN115862079A (zh) * 2022-12-26 2023-03-28 维沃移动通信有限公司 指纹模组和电子设备
CN117218689A (zh) * 2023-09-08 2023-12-12 京东方科技集团股份有限公司 显示设备、指纹采集装置及方法
US20250103163A1 (en) * 2023-09-26 2025-03-27 Apple Inc. Touch sensing architecture for small form factors
US20260057695A1 (en) * 2024-08-22 2026-02-26 Qualcomm Incorporated Acoustic sensor systems with different heights
US20260057694A1 (en) * 2024-08-22 2026-02-26 Qualcomm Incorporated Acoustic sensor systems with different heights

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN107798300A (zh) * 2017-10-10 2018-03-13 成都安瑞芯科技有限公司 超声波指纹识别模组、器件及电子设备
CN108664913A (zh) * 2018-05-04 2018-10-16 京东方科技集团股份有限公司 一种传感器及其制备方法、面板和识别装置
CN108921074A (zh) * 2018-06-26 2018-11-30 业成科技（成都）有限公司 超声波指纹识别模组及其制作方法

Family Cites Families (44)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3971674B2 (ja) * 2002-07-10 2007-09-05 富士通株式会社 接触型センサ内蔵半導体装置及びその製造方法
JP2007510301A (ja) 2003-10-29 2007-04-19 コンダクティブ・インクジェット・テクノロジー・リミテッド 部品の電気的接続
US7403023B2 (en) * 2005-03-14 2008-07-22 Qc Solutions, Inc. Apparatus and method of measuring defects in an ion implanted wafer by heating the wafer to a treatment temperature and time to substantially stabilize interstitial defect migration while leaving the vacancy defects substantially unaltered.
JP2007336684A (ja) 2006-06-14 2007-12-27 Seiko Epson Corp 振動体、圧電アクチュエータ、電子機器、および振動体の製造方法
EP1900528B1 (en) 2006-09-14 2010-04-28 Brother Kogyo Kabushiki Kaisha Liquid ejection head and driving method thereof
JP5095593B2 (ja) * 2008-03-21 2012-12-12 富士フイルム株式会社 超音波探触子及びその製造方法
JP2012009148A (ja) 2010-06-22 2012-01-12 Konica Minolta Holdings Inc 積層型透明導電性フィルム
KR20130107640A (ko) * 2012-03-22 2013-10-02 삼성전자주식회사 압력감지방식 터치패널
JP6036341B2 (ja) * 2013-01-29 2016-11-30 セイコーエプソン株式会社 光学モジュール、及び電子機器
US9864450B2 (en) 2013-06-04 2018-01-09 Nissha Co., Ltd. Piezoelectric sensor and pressure detection apparatus
CN103927468B (zh) * 2013-12-31 2017-08-11 上海天马微电子有限公司 一种指纹识别模块和显示装置
EP2983108A3 (en) 2014-08-05 2016-07-13 LG Innotek Co., Ltd. Fingerprint sensor and touch device including the same
CN104281328A (zh) 2014-10-31 2015-01-14 合肥鑫晟光电科技有限公司 一种触摸屏和显示面板
CN104680125B (zh) * 2014-11-24 2018-02-23 麦克思智慧资本股份有限公司 指纹识别元件及指纹识别装置
US10008659B2 (en) * 2014-12-09 2018-06-26 Lg Innotek Co., Ltd. Fingerprint sensor
CN104809431B (zh) 2015-04-03 2018-04-27 业成光电（深圳）有限公司 超声波感测装置
KR102387788B1 (ko) 2015-08-26 2022-04-18 엘지디스플레이 주식회사 표시장치
US10452887B2 (en) * 2016-05-10 2019-10-22 Invensense, Inc. Operating a fingerprint sensor comprised of ultrasonic transducers
CN106057855B (zh) 2016-05-30 2019-02-19 武汉华星光电技术有限公司 可折叠显示装置及其驱动方法
CN106250834B (zh) * 2016-07-25 2019-05-10 京东方科技集团股份有限公司 指纹识别显示面板、其制作方法、其驱动方法及显示装置
CN106896955B (zh) * 2017-01-13 2019-11-15 业成科技（成都）有限公司 超声波传感装置及其检测电路与检测方法
CN106782085B (zh) * 2017-02-22 2019-11-01 北京小米移动软件有限公司 显示模组和电子设备
CN106951130B (zh) 2017-03-28 2019-09-03 京东方科技集团股份有限公司 一种阵列基板、显示面板、显示设备及阵列基板制备方法
JP6899238B2 (ja) 2017-03-29 2021-07-07 ローム株式会社 圧電素子およびその製造方法
US10846501B2 (en) * 2017-04-28 2020-11-24 The Board Of Trustees Of The Leland Stanford Junior University Acoustic biometric touch scanner
CN107122080A (zh) * 2017-05-24 2017-09-01 厦门天马微电子有限公司 一种触控显示装置
CN107220630B (zh) * 2017-06-07 2021-09-03 京东方科技集团股份有限公司 显示基板及其驱动方法、显示装置
CN207182329U (zh) * 2017-09-12 2018-04-03 南昌欧菲生物识别技术有限公司 电子设备
US10725590B2 (en) * 2017-09-29 2020-07-28 Qualcomm Incorporated Sliding range gate for large area ultrasonic sensor
CN107609539A (zh) * 2017-10-13 2018-01-19 南昌欧菲生物识别技术有限公司 指纹识别模组及电子装置
CN108363993B (zh) * 2018-03-15 2020-12-04 京东方科技集团股份有限公司 指纹识别模组、显示装置及其制作方法
CN108598117B (zh) * 2018-04-25 2021-03-12 京东方科技集团股份有限公司 一种显示装置和显示装置的指纹识别方法
CN108845323B (zh) * 2018-04-28 2020-12-04 京东方科技集团股份有限公司 面板以及使用面板确定目标物体的位置的方法
CN108446685B (zh) 2018-05-24 2024-07-26 京东方科技集团股份有限公司 超声波指纹识别模组及其制备方法和显示装置
CN208126414U (zh) * 2018-05-24 2018-11-20 京东方科技集团股份有限公司 超声波指纹识别模组和显示装置
CN108955736B (zh) * 2018-05-30 2020-03-06 京东方科技集团股份有限公司 一种超声波传感器及其制作方法、显示装置
CN108877516B (zh) * 2018-06-11 2021-11-23 云谷（固安）科技有限公司 柔性显示装置和柔性显示装置的显示控制方法
CN108776797B (zh) * 2018-07-03 2024-08-20 京东方科技集团股份有限公司 一种指纹识别电路及其驱动方法、显示装置
CN109145859B (zh) * 2018-09-04 2020-12-25 京东方科技集团股份有限公司 一种显示面板、其检测方法及显示装置
CN209056492U (zh) * 2018-09-20 2019-07-02 福建华佳彩有限公司 一种amoled显示器器件
CN108960218A (zh) * 2018-09-25 2018-12-07 东莞新科技术研究开发有限公司深圳分公司 一种超声波指纹传感器及指纹识别模组
CN208922280U (zh) * 2018-09-25 2019-05-31 东莞新科技术研究开发有限公司深圳分公司 一种超声波指纹传感器及指纹识别模组
CN109584770B (zh) 2018-12-17 2022-02-08 武汉天马微电子有限公司 显示面板及显示装置
CN109829419B (zh) * 2019-01-28 2021-08-24 京东方科技集团股份有限公司 指纹识别模组及其驱动方法和制作方法、显示装置

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN107798300A (zh) * 2017-10-10 2018-03-13 成都安瑞芯科技有限公司 超声波指纹识别模组、器件及电子设备
CN108664913A (zh) * 2018-05-04 2018-10-16 京东方科技集团股份有限公司 一种传感器及其制备方法、面板和识别装置
CN108921074A (zh) * 2018-06-26 2018-11-30 业成科技（成都）有限公司 超声波指纹识别模组及其制作方法

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN113506514A (zh) * 2021-07-08 2021-10-15 京东方科技集团股份有限公司 显示基板及其制作方法、显示面板、显示装置
CN113506514B (zh) * 2021-07-08 2023-08-25 京东方科技集团股份有限公司 显示基板及其制作方法、显示面板、显示装置

Also Published As

Publication number Publication date
US11487389B2 (en) 2022-11-01
US11397495B2 (en) 2022-07-26
WO2020155645A1 (zh) 2020-08-06
US20210019018A1 (en) 2021-01-21
CN109829419B (zh) 2021-08-24
JP2022518637A (ja) 2022-03-16
US11442583B2 (en) 2022-09-13
EP3920085A4 (en) 2022-11-16
EP3920085A1 (en) 2021-12-08
CN113139412B (zh) 2025-02-07
EP3920080B1 (en) 2024-02-28
US20210209334A1 (en) 2021-07-08
WO2020156249A1 (zh) 2020-08-06
CN111758103A (zh) 2020-10-09
EP3920080A4 (en) 2022-11-16
CN111758102B (zh) 2025-02-11
CN111758099B (zh) 2022-04-19
CN113139412A (zh) 2021-07-20
EP3920085B1 (en) 2024-11-20
US20210200985A1 (en) 2021-07-01
CN111758099A (zh) 2020-10-09
EP3920080A1 (en) 2021-12-08
CN111758103B (zh) 2024-01-30
CN109829419A (zh) 2019-05-31
JP7456943B2 (ja) 2024-03-27
CN111758102A (zh) 2020-10-09

Similar Documents

Publication Publication Date Title
US11442583B2 (en) Fingerprint identification module, manufacturing method thereof and electronic device
US11120243B2 (en) Fingerprint identification module, manufacturing method and driving method thereof, display device
US11134334B2 (en) Sounding device, manufacturing method thereof and display device
CN109244108B (zh) 一种oled显示基板及其制作方法、oled显示装置
CN106778691B (zh) 声波式指纹识别装置及其制作方法以及应用其的电子装置
US9417745B2 (en) Touch screen, the manufacturing method of the touch screen and display device
CN111682045B (zh) 超声波指纹识别传感器及其制作方法、显示模组
WO2021258462A1 (zh) 显示面板及显示装置
CN103885659A (zh) 电容式触控显示面板、电容式触控面板及其制造方法
WO2022179219A1 (zh) 压电传感器及触觉反馈装置
US11301082B2 (en) Fingerprint recognition unit and fabrication method thereof, fingerprint recognition module and display device
TW202305573A (zh) 超聲波指紋識別模組、電子設備及超聲波指紋識別方法
WO2020186983A1 (zh) 指纹识别结构及其驱动方法、显示装置
CN111613648A (zh) 显示装置及其制造方法
CN115275044A (zh) 显示面板
CN103515375B (zh) 阵列基板及其制造方法、以及显示装置
CN115546851A (zh) 超声指纹传感器及其制备方法、电子设备
CN110765968A (zh) 一种指纹识别模组、显示装置及其制作方法
US11436856B2 (en) Method for manufacturing fingerprint recognition module, fingerprint recognition module, and display device
TW587190B (en) Liquid crystal display device and method for manufacturing the same
CN108416319A (zh) 指纹识别模组及其制备方法、显示面板以及显示装置
CN115802864A (zh) 超声换能器及其制备方法和电子设备
WO2021254090A1 (zh) 指纹识别结构及其驱动方法、电子装置
CN223729911U (zh) 一种定向发声折叠装置及电子设备
US11823482B2 (en) Ultrasonic sensor, display panel and display apparatus

Legal Events

Date Code Title Description
121 Ep: the epo has been informed by wipo that ep was designated in this application

Ref document number: 20749056

Country of ref document: EP

Kind code of ref document: A1

ENP Entry into the national phase

Ref document number: 2020564385

Country of ref document: JP

Kind code of ref document: A

NENP Non-entry into the national phase

Ref country code: DE

ENP Entry into the national phase

Ref document number: 2020749056

Country of ref document: EP

Effective date: 20210830

WWG Wipo information: grant in national office

Ref document number: 202080000036.3

Country of ref document: CN