WO2020200070A1 - 光学防伪元件及其制作方法 - Google Patents

光学防伪元件及其制作方法 Download PDF

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Publication number
WO2020200070A1
WO2020200070A1 PCT/CN2020/081592 CN2020081592W WO2020200070A1 WO 2020200070 A1 WO2020200070 A1 WO 2020200070A1 CN 2020081592 W CN2020081592 W CN 2020081592W WO 2020200070 A1 WO2020200070 A1 WO 2020200070A1
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WO
WIPO (PCT)
Prior art keywords
layer
area
microstructure
optical anti
reflective layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/CN2020/081592
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English (en)
French (fr)
Inventor
胡春华
朱军
张巍巍
孙凯
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
China Banknote Printing and Minting Corp
Zhongchao Special Security Technology Co Ltd
Original Assignee
China Banknote Printing and Minting Corp
Zhongchao Special Security Technology Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by China Banknote Printing and Minting Corp, Zhongchao Special Security Technology Co Ltd filed Critical China Banknote Printing and Minting Corp
Priority to EP20784976.1A priority Critical patent/EP3950372A4/en
Priority to JP2021555864A priority patent/JP7417625B2/ja
Priority to US17/600,014 priority patent/US12304231B2/en
Publication of WO2020200070A1 publication Critical patent/WO2020200070A1/zh
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

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    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B42—BOOKBINDING; ALBUMS; FILES; SPECIAL PRINTED MATTER
    • B42D—BOOKS; BOOK COVERS; LOOSE LEAVES; PRINTED MATTER CHARACTERISED BY IDENTIFICATION OR SECURITY FEATURES; PRINTED MATTER OF SPECIAL FORMAT OR STYLE NOT OTHERWISE PROVIDED FOR; DEVICES FOR USE THEREWITH AND NOT OTHERWISE PROVIDED FOR; MOVABLE-STRIP WRITING OR READING APPARATUS
    • B42D25/00—Information-bearing cards or sheet-like structures characterised by identification or security features; Manufacture thereof
    • B42D25/30—Identification or security features, e.g. for preventing forgery
    • B42D25/324—Reliefs
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B42—BOOKBINDING; ALBUMS; FILES; SPECIAL PRINTED MATTER
    • B42D—BOOKS; BOOK COVERS; LOOSE LEAVES; PRINTED MATTER CHARACTERISED BY IDENTIFICATION OR SECURITY FEATURES; PRINTED MATTER OF SPECIAL FORMAT OR STYLE NOT OTHERWISE PROVIDED FOR; DEVICES FOR USE THEREWITH AND NOT OTHERWISE PROVIDED FOR; MOVABLE-STRIP WRITING OR READING APPARATUS
    • B42D25/00—Information-bearing cards or sheet-like structures characterised by identification or security features; Manufacture thereof
    • B42D25/20—Information-bearing cards or sheet-like structures characterised by identification or security features; Manufacture thereof characterised by a particular use or purpose
    • B42D25/21—Information-bearing cards or sheet-like structures characterised by identification or security features; Manufacture thereof characterised by a particular use or purpose for multiple purposes
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B42—BOOKBINDING; ALBUMS; FILES; SPECIAL PRINTED MATTER
    • B42D—BOOKS; BOOK COVERS; LOOSE LEAVES; PRINTED MATTER CHARACTERISED BY IDENTIFICATION OR SECURITY FEATURES; PRINTED MATTER OF SPECIAL FORMAT OR STYLE NOT OTHERWISE PROVIDED FOR; DEVICES FOR USE THEREWITH AND NOT OTHERWISE PROVIDED FOR; MOVABLE-STRIP WRITING OR READING APPARATUS
    • B42D25/00—Information-bearing cards or sheet-like structures characterised by identification or security features; Manufacture thereof
    • B42D25/20—Information-bearing cards or sheet-like structures characterised by identification or security features; Manufacture thereof characterised by a particular use or purpose
    • B42D25/22—Information-bearing cards or sheet-like structures characterised by identification or security features; Manufacture thereof characterised by a particular use or purpose for use in combination with accessories specially adapted for information-bearing cards
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B42—BOOKBINDING; ALBUMS; FILES; SPECIAL PRINTED MATTER
    • B42D—BOOKS; BOOK COVERS; LOOSE LEAVES; PRINTED MATTER CHARACTERISED BY IDENTIFICATION OR SECURITY FEATURES; PRINTED MATTER OF SPECIAL FORMAT OR STYLE NOT OTHERWISE PROVIDED FOR; DEVICES FOR USE THEREWITH AND NOT OTHERWISE PROVIDED FOR; MOVABLE-STRIP WRITING OR READING APPARATUS
    • B42D25/00—Information-bearing cards or sheet-like structures characterised by identification or security features; Manufacture thereof
    • B42D25/30—Identification or security features, e.g. for preventing forgery
    • B42D25/328—Diffraction gratings; Holograms
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B42—BOOKBINDING; ALBUMS; FILES; SPECIAL PRINTED MATTER
    • B42D—BOOKS; BOOK COVERS; LOOSE LEAVES; PRINTED MATTER CHARACTERISED BY IDENTIFICATION OR SECURITY FEATURES; PRINTED MATTER OF SPECIAL FORMAT OR STYLE NOT OTHERWISE PROVIDED FOR; DEVICES FOR USE THEREWITH AND NOT OTHERWISE PROVIDED FOR; MOVABLE-STRIP WRITING OR READING APPARATUS
    • B42D25/00—Information-bearing cards or sheet-like structures characterised by identification or security features; Manufacture thereof
    • B42D25/30—Identification or security features, e.g. for preventing forgery
    • B42D25/36—Identification or security features, e.g. for preventing forgery comprising special materials
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B42—BOOKBINDING; ALBUMS; FILES; SPECIAL PRINTED MATTER
    • B42D—BOOKS; BOOK COVERS; LOOSE LEAVES; PRINTED MATTER CHARACTERISED BY IDENTIFICATION OR SECURITY FEATURES; PRINTED MATTER OF SPECIAL FORMAT OR STYLE NOT OTHERWISE PROVIDED FOR; DEVICES FOR USE THEREWITH AND NOT OTHERWISE PROVIDED FOR; MOVABLE-STRIP WRITING OR READING APPARATUS
    • B42D25/00—Information-bearing cards or sheet-like structures characterised by identification or security features; Manufacture thereof
    • B42D25/30—Identification or security features, e.g. for preventing forgery
    • B42D25/36—Identification or security features, e.g. for preventing forgery comprising special materials
    • B42D25/373—Metallic materials
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B42—BOOKBINDING; ALBUMS; FILES; SPECIAL PRINTED MATTER
    • B42D—BOOKS; BOOK COVERS; LOOSE LEAVES; PRINTED MATTER CHARACTERISED BY IDENTIFICATION OR SECURITY FEATURES; PRINTED MATTER OF SPECIAL FORMAT OR STYLE NOT OTHERWISE PROVIDED FOR; DEVICES FOR USE THEREWITH AND NOT OTHERWISE PROVIDED FOR; MOVABLE-STRIP WRITING OR READING APPARATUS
    • B42D25/00—Information-bearing cards or sheet-like structures characterised by identification or security features; Manufacture thereof
    • B42D25/40—Manufacture
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B42—BOOKBINDING; ALBUMS; FILES; SPECIAL PRINTED MATTER
    • B42D—BOOKS; BOOK COVERS; LOOSE LEAVES; PRINTED MATTER CHARACTERISED BY IDENTIFICATION OR SECURITY FEATURES; PRINTED MATTER OF SPECIAL FORMAT OR STYLE NOT OTHERWISE PROVIDED FOR; DEVICES FOR USE THEREWITH AND NOT OTHERWISE PROVIDED FOR; MOVABLE-STRIP WRITING OR READING APPARATUS
    • B42D25/00—Information-bearing cards or sheet-like structures characterised by identification or security features; Manufacture thereof
    • B42D25/40—Manufacture
    • B42D25/45—Associating two or more layers
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B5/00—Optical elements other than lenses
    • G02B5/18—Diffraction gratings
    • G02B5/1847—Manufacturing methods
    • G02B5/1857—Manufacturing methods using exposure or etching means, e.g. holography, photolithography, exposure to electron or ion beams
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B42—BOOKBINDING; ALBUMS; FILES; SPECIAL PRINTED MATTER
    • B42D—BOOKS; BOOK COVERS; LOOSE LEAVES; PRINTED MATTER CHARACTERISED BY IDENTIFICATION OR SECURITY FEATURES; PRINTED MATTER OF SPECIAL FORMAT OR STYLE NOT OTHERWISE PROVIDED FOR; DEVICES FOR USE THEREWITH AND NOT OTHERWISE PROVIDED FOR; MOVABLE-STRIP WRITING OR READING APPARATUS
    • B42D25/00—Information-bearing cards or sheet-like structures characterised by identification or security features; Manufacture thereof
    • B42D25/20—Information-bearing cards or sheet-like structures characterised by identification or security features; Manufacture thereof characterised by a particular use or purpose
    • B42D25/24—Passports
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B42—BOOKBINDING; ALBUMS; FILES; SPECIAL PRINTED MATTER
    • B42D—BOOKS; BOOK COVERS; LOOSE LEAVES; PRINTED MATTER CHARACTERISED BY IDENTIFICATION OR SECURITY FEATURES; PRINTED MATTER OF SPECIAL FORMAT OR STYLE NOT OTHERWISE PROVIDED FOR; DEVICES FOR USE THEREWITH AND NOT OTHERWISE PROVIDED FOR; MOVABLE-STRIP WRITING OR READING APPARATUS
    • B42D25/00—Information-bearing cards or sheet-like structures characterised by identification or security features; Manufacture thereof
    • B42D25/20—Information-bearing cards or sheet-like structures characterised by identification or security features; Manufacture thereof characterised by a particular use or purpose
    • B42D25/29—Securities; Bank notes

Definitions

  • the invention relates to the technical field of optical anti-counterfeiting, in particular to an optical anti-counterfeiting element and a manufacturing method of the optical anti-counterfeiting element.
  • optical anti-counterfeiting technology has been widely used in various high-security or high-value-added printed materials such as banknotes, credit cards, passports, securities, and product packaging, and has achieved very good results.
  • the optical effects formed by microstructures have been widely used because of their good compatibility with image design and obvious dynamic effects.
  • the microstructure optical anti-counterfeiting technology generally uses a metal reflective layer, such as aluminum.
  • holographic technology the most widely used optical anti-counterfeiting technology currently applied to optical films, is an optical technology developed by using the diffraction effect formed by optical microstructures.
  • the fifth set of 1999 version of 5 yuan, 10 yuan, 20 yuan, 50 yuan, and 100 yuan anti-counterfeiting line uses holographic technology.
  • Multi-layer interference optical variable technology generally uses vapor deposition to realize the evaporation of the reflective layer, the dielectric layer and the absorption layer.
  • the reflective layer, the dielectric layer and the absorption layer constitute the basic unit of the interference optical variable coating.
  • the material used as the reflective layer is generally thick and has high reflectivity, while the material used as the absorbing layer is generally thin and has the characteristics of translucency.
  • the dielectric layer is a transparent material. If the thickness satisfies certain conditions, light can interfere in the Fabro cavity formed by the parallel reflecting layer and the absorbing layer.
  • the interference light variable coating shows different colors at different angles.
  • the fifth set of the 2015 version of the 100 yuan security thread uses multi-layer interference optical variable technology, which is magenta when viewed from the front and green when viewed obliquely. If holographic, non-diffraction and other optical micro-structure anti-counterfeiting technologies and multi-layer interference optical change technology are integrated into the same product, the dynamic effects of holographic and non-diffractive optical change and the optical change effect of multi-layer coatings can be effectively exerted. Enhance the anti-counterfeiting effect. However, if the multi-layer interference coating is directly deposited on the optical microstructure, the optical effect and the interference light change effect presented by the optical microstructure have the disadvantage of weakening each other.
  • Patent application CN 200980104829.3 proposes the preparation of an optical anti-counterfeiting product that integrates multi-layer interference light change and high-brightness reflective microstructures (including diffractive microstructures and non-diffractive microstructures) through a partial printing hollow process, that is, some areas have multiple The layer interferes with the optical variable characteristics, some areas have high-brightness reflective microstructure optical characteristics, and other areas have a hollow effect.
  • the accuracy of the partial hollow area in the patent application depends on the accuracy of printing, and the accuracy of printing is generally above 100um, which limits the application of high-end anti-counterfeiting optical products to a certain extent.
  • the production has independent optical microstructures (such as holographic, non-diffractive, etc.) anti-counterfeiting features and multilayer interference optically variable optical features, and the hollow area is high-precision relative to the optical microstructure image area, and can even be used as zero error
  • Positioned optical anti-counterfeiting elements are of great significance to the research on the feature positioning of optical anti-counterfeiting elements.
  • the purpose of the embodiments of the present invention is to provide an optical anti-counterfeiting element and a manufacturing method thereof.
  • the optical anti-counterfeiting element contains mutually independent optical microstructures (such as holographic, non-diffractive, etc.) anti-counterfeiting features and multilayer interference optically variable optical features, and has Hollowed area strictly positioned with optical microstructure image.
  • an embodiment of the present invention provides an optical anti-counterfeiting element, including: an undulating structure layer, the undulating structure layer has a first area, a second area, and a third area; the first area has a first microstructure The second area has a second microstructure; the third area is an unstructured flat area; wherein the specific volume of the second microstructure is greater than the specific volume of the first microstructure; wherein, the Both the first region and the third region have overlapping reflective layers, dielectric layers, and absorbing layers, and the second region does not have a reflective layer; wherein the dielectric layer located in the first region is far from the undulations
  • the surface morphology of one side of the structure layer is obviously different from the surface morphology of the undulating structure layer.
  • the first area, the second area, and the third area should not only be regarded as a fixed sequence on the undulating structure layer, but can also be the second area, the first area and the first area. Three areas and other arbitrary arrangements.
  • the first area presents the specific image presented by the first microstructure, and has no or weak interference light change effect, while the third area has obvious interference light change effect.
  • the second area The area has a light-transmitting hollowing effect, and the image presented with the first area is strictly positioned.
  • the so-called specific volume of the microstructure refers to the ratio of the volume of the liquid filled with the microstructure to its projected area when the optical security element is placed horizontally, and its unit is um 3 /um 2 .
  • the difference between the microstructure of the second area and the microstructure of the first area is for the need of hollowing, that is, the reflective layer on the microstructure with a small specific volume can be retained, and the reflective layer on the microstructure with a large specific volume can be retained. Remove. Will continue to discuss this issue in more depth in the specific implementation section.
  • the first microstructure is one of a periodic structure and an aperiodic structure, or a combination of a periodic structure and an aperiodic structure;
  • the cross-sectional structure of the first microstructure along the extension direction is:
  • the specific volume range of the first microstructure is greater than 0.05 um 3 /um 2 and less than 0.5 um 3 /um 2 .
  • the specific volume range of the first microstructure is preferably greater than 0.1um 3 /um 2 and less than 0.3um 3 /um 2 .
  • the second microstructure is one of a periodic structure and an aperiodic structure, or a combination of a periodic structure and an aperiodic structure;
  • the cross-sectional structure of the second microstructure along the extension direction is:
  • One of sinusoidal structure, rectangular grating structure, semicircular structure, trapezoidal structure, and blazed grating structure, or at least any two of sinusoidal structure, rectangular grating structure, semicircular structure, trapezoidal structure, and blazed grating structure The structure of the structure combination.
  • the specific volume range of the second microstructure is greater than 0.1 um 3 /um 2 and less than 1 um 3 /um 2 .
  • the specific volume range of the second microstructure is preferably greater than 0.2um 3 /um 2 and less than 0.5um 3 /um 2 .
  • the material of the reflective layer includes:
  • the dielectric layer is formed by printing
  • the main resin of the dielectric layer includes:
  • polyurethane One of polyurethane, acrylic, and polyester, or a polymer composed of a combination of at least any two resins among polyurethane, acrylic, and polyester;
  • the material of the absorption layer includes:
  • the reflective layer is adjacent to the undulating structure layer.
  • the order of each layer is further set. If the undulating structure layer is selected as the reference bottom, and the order is from bottom to top, the undulating structure layer, the reflective layer, the dielectric layer and the absorption Floor.
  • the second region does not have a reflective layer, a dielectric layer, and an absorption layer.
  • the absorption layer is adjacent to the undulating structure layer.
  • the order of each layer is further set. If the undulating structure layer is selected as the reference bottom, and the order is from bottom to top, the undulating structure layer, the absorption layer, the dielectric layer, and the reflective layer Floor.
  • the second region has a dielectric layer and an absorption layer.
  • the embodiment of the present invention provides a manufacturing method of an optical anti-counterfeiting element, and the manufacturing method includes:
  • the undulating structure layer has a first area, a second area, and a third area, the first area has a first microstructure, the second area has a second microstructure, the first area The specific volume of the two microstructures is greater than the specific volume of the first microstructure, and the third area is a flat area without structure;
  • a reflective layer On the undulating structure layer, a reflective layer, a dielectric layer, and an absorption layer are sequentially formed, wherein the reflective layer is formed by vapor deposition, the dielectric layer is formed by printing, and the absorption layer is formed by vapor deposition;
  • step S3 Put the semi-finished product of step S2) in an etching atmosphere capable of reacting with the reflective layer material until the reflective layer in the second area is completely or partially removed.
  • step S3) in the process of completely or partially removing the reflective layer in the second region further includes:
  • the dielectric layer and the absorption layer in the second region are also completely or partially removed.
  • the embodiment of the present invention also provides a manufacturing method of an optical anti-counterfeiting element, the manufacturing method including:
  • the undulating structure layer has a first area, a second area, and a third area, the first area has a first microstructure, the second area has a second microstructure, the first area The specific volume of the two microstructures is greater than the specific volume of the first microstructure, and the third area is a flat area without structure;
  • an absorbing layer, a dielectric layer and a reflective layer are sequentially formed, wherein the reflective layer is formed by vapor deposition, the dielectric layer is formed by printing, and the absorbing layer is formed by vapor deposition;
  • step S4) placing the semi-finished product of step S3) in a corrosive atmosphere capable of reacting with the material of the reflective layer for antireflection, until the reflective layer in the second region is completely or partially removed.
  • step S4) in the process of completely or partially removing the reflective layer in the second region further includes:
  • the reflective layer in the second region is removed, but neither the dielectric layer nor the absorption layer is removed.
  • the present invention realizes an undulating structure layer with asymmetric and surface heterogeneous characteristics, and uses the undulating structure layer to produce a plurality of relatively independent local regions, especially by having at least a multilayer interference light variable characteristic
  • the area realizes the heterogeneous asymmetry of the partial cross-section of the optical anti-counterfeiting element, and the hollow area formed by a plurality of relatively independent partial areas of the optical anti-counterfeiting element has high local image detail accuracy and clear transmission imaging.
  • Figure 1 is a top view of an optical anti-counterfeiting element according to an embodiment of the present invention
  • FIG. 2 is a cross-sectional view of an optical security element along the pattern "X-X" of an embodiment of the undulating structure layer with a first surface microstructure of the present invention
  • FIG. 3 is a cross-sectional view of the optical security element along the pattern "X-X" of an embodiment of the undulating structure layer with a second surface microstructure of the present invention
  • FIG. 4 is a cross-sectional view of a semi-finished product after forming an undulating structure layer with a first area, a second area, and a third area according to the first surface microstructure embodiment of the present invention
  • FIG. 5 is a cross-sectional view of a semi-finished product after forming an undulating structure layer with a reflective layer, a dielectric layer and an absorbing layer in the first surface microstructure embodiment of the present invention
  • FIG. 6 is a cross-sectional view of a semi-finished product after etching the reflective layer in the second region of the undulating structure layer according to the first surface microstructure embodiment of the present invention
  • FIG. 7 is a cross-sectional view of a semi-finished product of the first surface microstructure embodiment of the present invention after other functional coatings are formed;
  • FIG. 8 is a cross-sectional view of a semi-finished product after forming an undulating structure layer with a first area, a second area, and a third area according to the second surface microstructure embodiment of the present invention
  • FIG. 9 is a cross-sectional view of a semi-finished product after forming an undulating structure layer with a reflective layer, a dielectric layer and an absorbing layer in the second surface microstructure embodiment of the present invention.
  • FIG. 10 is a cross-sectional view of a semi-finished product after a protective layer is applied to the relief structure layer of the second surface microstructure embodiment of the present invention
  • FIG. 11 is a cross-sectional view of a semi-finished product after etching the reflective layer in the second region of the undulating structure layer according to the second surface microstructure embodiment of the present invention
  • Fig. 12 is a cross-sectional view of the product after forming other functional coatings according to the second surface microstructure embodiment of the present invention.
  • An optical anti-counterfeiting element includes an undulating structure layer 2, the undulating structure layer 2 includes at least a first region composed of a first microstructure with a small specific volume and a second microstructure with a large specific volume
  • the second area is composed of a structure and a flat, unstructured third area; and the first area and the third area both have a reflective layer 31, a printed dielectric layer 32 and an absorption layer 33, while the second area does not have Reflective layer 31.
  • the first area is taken as the image area A
  • the second area is taken as the hollow area B
  • the third area is taken as the interference light variable area C.
  • the image area A has optical characteristics of high-brightness reflective microstructures (such as holographic or non-diffractive optical microstructures), and is generally presented as a specific image, such as the "PY" letter shown.
  • the interference light variable area C has different colors at different angles when observed by reflection.
  • the hollow area C has a transparent or semi-transparent effect when viewed through perspective.
  • the hollowed-out area C and the image area A are strictly positioned and error-free.
  • the hollowed-out area C in FIG. 1 strictly surrounds the boundary of the image area A and is presented as the outline of the image.
  • the fineness of the hollow area can be very high, for example, it can be less than 10um.
  • Fig. 2 is a possible cross-sectional view of the exemplary optical security element shown in Fig. 1 along X-X.
  • the optical anti-counterfeiting element includes a substrate 1, an undulating structure layer 2, an interference light variable layer 3 (including a reflective layer 31, a dielectric layer 32, and an absorption layer 33 ), and other functional coatings 4.
  • the relief structure layer 2 includes a first area A composed of a first microstructure with a small specific volume, a second area B composed of a second microstructure with a large specific volume, and a flat third area C without a relief structure.
  • Both the first area A and the second area B have a reflective layer 31, a dielectric layer 32 and an absorbing layer 33, while the second area B does not have a reflective layer 31, a dielectric layer 32 and an absorbing layer 33.
  • the dielectric layer 32 is formed by printing, so the dielectric layer 32 in the first area A is not covered with the undulating structure layer 2 and the reflective layer 3 in a different type, resulting in no effective Fabro formed between the reflective layer 31 and the absorbing layer 33
  • the interference cavity that is, the first area A, does not exhibit interference light change effect or exhibits weak interference light change effect.
  • the undulating structure layer 2 in the third region C is a flat structure, and an effective Fabero interference cavity is formed between the reflective layer 31 and the absorbing layer 33, thus presenting an obvious interference light change effect.
  • the second area B does not have the reflective layer 31, the dielectric layer 32, and the absorbing layer 33, and therefore shows a hollowed-out effect with high transparency when viewed through perspective.
  • Other functional coatings 5 can be set as required, for example, as a bonding layer, which plays a role of bonding with the main product to be protected.
  • Fig. 3 is another possible cross-sectional view along X-X of the exemplary optical security element shown in Fig. 1.
  • the optical anti-counterfeiting element includes a substrate 1, an undulating structure layer 2, an interference light variable layer 3 (including a reflective layer 31, a dielectric layer 32, and an absorption layer 33), a protective layer 5, and other functional coatings 4.
  • the undulating structure layer 2 includes a first region A composed of a first microstructure with a small specific volume, a second region B composed of a second microstructure with a large specific volume, and a flat, non-undulating structure.
  • the third area C is another possible cross-sectional view along X-X of the exemplary optical security element shown in Fig. 1.
  • the optical anti-counterfeiting element includes a substrate 1, an undulating structure layer 2, an interference light variable layer 3 (including a reflective layer 31, a dielectric layer 32, and an absorption layer 33), a protective layer 5, and other functional coatings 4.
  • the protective layer 5 is introduced to protect the reflective layer 31 on the first area A and the third area C during the manufacturing process.
  • the method for the optical anti-counterfeiting element shown in FIG. 2 according to the present invention will be described below with reference to FIG. 4, and the method may include steps S11 to S13.
  • the undulating structure layer 2 includes at least a first area A composed of a first microstructure with a small specific volume and a second microstructure with a large specific volume.
  • the second area B and the flat third area C without structure are as shown in FIG. 4.
  • the substrate 1 may be at least partially transparent, or may be a colored dielectric layer, may also be a transparent dielectric film with a functional coating on the surface, or may be a multilayer film formed by compounding.
  • the substrate 1 is generally formed of a film material with good physical and chemical resistance and high mechanical strength.
  • PET polyethylene terephthalate
  • PEN polyethylene naphthalate
  • PP acrylic
  • the substrate 1 may contain an adhesion enhancement layer to enhance the adhesion of the substrate 1 and the relief structure layer 2.
  • the undulating structure layer 2 can be formed by batch replication through processing methods such as ultraviolet casting, molding, and nanoimprinting.
  • the undulating structure layer 2 can be formed by a thermoplastic resin through a molding process, that is, the thermoplastic resin pre-coated on the substrate 1 is heated and softened and deformed when passing through a high-temperature metal template, thereby forming a specific undulating structure, and then cooling and molding .
  • the undulating structure layer 2 can also be formed by a radiation curing casting process, that is, by coating a radiation curing resin on the substrate 1 and pressing the original plate on it, while irradiating radiation such as ultraviolet rays or electron beams to cure the above materials, Then, the original plate is removed to form the relief structure layer 2.
  • the undulating structure layer 2 includes a first area A composed of a first microstructure with a small specific volume, a second area B composed of a second microstructure with a large specific volume, and a flat, unstructured third area C.
  • the first microstructure may be one or a combination of a periodic structure or a non-periodic structure
  • the cross-sectional structure may be one or a combination of a sinusoidal structure, a rectangular grating structure, a semicircular structure, and a blazed grating structure.
  • the specific size (such as period, depth, etc.) of the first microstructure is determined by the optical effect to be formed.
  • the specific volume of the first microstructure should be greater than 0.05um 3 /um 2 , less than 0.5um 3 /um 2 , and more preferably, greater than 0.1um 3 /um 2 , less than 0.3um 3 /um 2 .
  • the second microstructure can also be one or a combination of a periodic structure or a non-periodic structure, and the cross-sectional structure can be one of a sinusoidal structure, a rectangular grating structure, a semicircular structure, a trapezoidal structure, and a blazed grating structure Or combination.
  • the second microstructure is completely used for hollowing, and no optical effect is formed in the final product.
  • the shape of the microstructure can be designed according to the hollowing requirement.
  • the larger the specific volume of the microstructure the better it is for hollowing out.
  • the larger the specific volume of the microstructure that is, the wider and deeper the microstructure, the higher the difficulty of mass production.
  • the specific volume of the second microstructure is greater than 0.1um 3 /um 2 and less than 1um 3 /um 2 , more preferably, greater than 0.2um 3 /um 2 and less than 0.5um 3 /um 2 .
  • a reflective layer 31, a dielectric layer 32, and an absorbing layer 33 are sequentially formed, wherein the reflective layer 31 and the absorbing layer 33 are formed by vapor deposition, and the dielectric layer 32 is formed by printing, as shown in FIG. 5 Shown.
  • the reflective layer 31 must have a strong reflective effect.
  • a highly reflective metal coating is used, which can be a single-layer metal coating, a multilayer metal coating, or a multi-metal mixed coating.
  • the material of the reflective layer may be metals such as Al, Cu, Ni, Cr, Ag, Fe, Sn, Au, Pt, or mixtures or alloys thereof.
  • Aluminum is preferably aluminum because of its low cost and high brightness.
  • the reflective layer 31 is formed on the undulating structure layer 2 by a vapor deposition method, such as but not limited to thermal evaporation, magnetron sputtering, and the like.
  • the reflective layer 31 is formed on the undulating structure layer 2 with a uniform surface density, in a manner of homogeneous coverage or substantially homogeneous coverage.
  • the thickness of the reflective layer is generally selected to be greater than 10 nm and less than 80 nm, preferably greater than 20 nm and less than 50 nm. If the reflective layer is too thin, the brightness is not enough; if the reflective layer is too thick, the fastness to the undulating structure layer is not good, and the cost increases.
  • the dielectric layer 32 is realized by a printing process.
  • the printing mentioned here refers to the process of applying a liquid varnish to the film and then drying and curing. From the formation area, it can be formed on the entire area of the film (called the coating process) or can be formed on the film.
  • the local area (called the printing process) in terms of specific implementation technology, can include spraying, roller coating, flexo printing, gravure printing, silk printing, etc.
  • Such a process makes the surface of the dielectric layer of the first area A and the reflective layer 31 cover differently, so that the absorption layer does not have the characteristic of interference light change or has weak characteristic of interference light change after the absorption layer is finally formed.
  • the dielectric layer 32 also serves as a protective layer in the hollowing process below.
  • the printing amount of the dielectric layer 32 should be such that the minimum thickness of the reflective layer 31 in the first region A is significantly smaller than the minimum thickness of the reflective layer 31 in the second region B.
  • the minimum thickness of the coating is at the top of the microstructure.
  • the main resin of the dielectric layer may be composed of polyurethane, acrylic, polyester, or a combination thereof.
  • the third area C is used as an interference light variable area. The flatter the surface of the dielectric layer, the more effective it is to form an effective Fabero interference cavity.
  • the dielectric layer should have a very low viscosity before printing, for example, less than 20 cps, so that it can flow better on the reflective layer.
  • the refractive index is around 1.5.
  • the printed thickness of the dielectric layer should be in the range of 200nm to 800nm. The specific thickness should be determined according to the required color and hollowing conditions.
  • the material of the absorbing layer 33 can be Al, Cu, Ni, Cr, Ag, Fe, Sn, Au, Pt and other metals or their mixtures or alloys, because nickel or chromium has high chemical stability even in a very thin state And the cost is very low, so nickel or chromium is preferred.
  • the absorption layer 33 is formed by a vapor deposition method, for example, including but not limited to thermal evaporation, magnetron sputtering, and the like.
  • the absorption layer 33 is formed on the dielectric layer 32 with a uniform surface density, in a manner of homo-type covering or substantially homo-type covering.
  • the thickness of the absorption layer is generally thin, generally less than 10 nm.
  • the light transmittance corresponding to the thickness of the absorbing layer is generally greater than 10%, less than 80%, preferably greater than 20%, less than 50%.
  • the printing amount of the dielectric layer 32 is set so that the minimum thickness of the reflective layer 31 in the first region A is significantly smaller than the minimum thickness of the reflective layer 31 in the second region B. Since the thickness of the absorbing layer is extremely small, it basically does not provide protection for the reflective layer. Therefore, the dielectric layer can provide effective protection for the reflective layer of the first region A, but cannot provide effective protection for the reflective layer of the second region B. In a corrosive atmosphere capable of reacting with the reflective layer material, after a certain period of time, the reflective layer in the second region B is etched and removed, while the reflective layer in the first region A is not or substantially not corroded.
  • the third region C has no microstructure, the thickness of the dielectric layer is uniform and the thickness is large, which can effectively protect the reflective layer in a corrosive atmosphere.
  • the dielectric layer and the absorption layer thereon are also lifted off. So far, the optical effect of the optical anti-counterfeiting element shown in Fig. 2 is formed: when viewed from the side of the absorbing layer, the first area A has micro-structure optical anti-counterfeiting features, but does not have or has weak interference light characteristics, and The third area C has obvious interference light change characteristics, but does not have the optical characteristics of microstructures; when viewed through perspective, the second area B has light-transmitting hollow characteristics.
  • the method of manufacturing the optical anti-counterfeiting element shown in Figure 2 generally also includes, after step S13, printing other functional coatings, such as forming a bonding layer, which acts as a bond with the protected product, as shown in Figure 7 .
  • the undulating structure layer 2 includes at least a first region A composed of a first microstructure with a small specific volume and a second microstructure with a large specific volume.
  • the second area B and the flat, unstructured third area C are as shown in FIG. 8.
  • an absorbing layer 33, a dielectric layer 32 and a reflective layer 31 are sequentially formed, wherein the reflective layer 31 and the absorbing layer 33 are formed by vapor deposition, and the dielectric layer 32 is formed by printing, as shown in FIG. 9 Shown.
  • the order of forming the absorbing layer, the dielectric layer, and the reflective layer is different from S12.
  • Such a sequence of formation makes that in the subsequent process of hollowing out the reflective layer, only the reflective layer is removed, and the dielectric layer of the absorbing layer is not removed.
  • the function of the dielectric layer is only to provide interference light change characteristics, and does not have the protective effect of the plating layer during the hollowing process. Therefore, the thickness setting of the dielectric layer is mainly determined by the interfering light color characteristics required for the formation of the third region C.
  • the applied thickness of the dielectric layer should ensure that the surface of the dielectric layer still has a large specific volume to meet the needs of subsequent hollowing.
  • the protective layer 5 provides protection for the reflective layers of the first area A and the third area C during the hollowing process. Therefore, the amount of printing of the protective layer 5 should be such that the minimum thickness of the reflective layer 31 in the first region A is significantly smaller than the minimum thickness of the reflective layer 31 in the second region B. Generally speaking, the minimum thickness of the coating is at the top of the microstructure. In this way, in the subsequent hollowing process, in the corrosive atmosphere that can react with the reflective layer material 31, the protective layer 5 can provide effective protection for the reflective layers of the first area A and the third area C, but cannot provide for the second area. Effective protection of the reflective layer of area B.
  • the main resin of the protective layer 5 may be composed of polyurethane, acrylic, polyester, or a combination thereof.
  • the reflective layer in the second region B is etched and removed, while the reflective layers in the first region A and the third region C are not or substantially not corroded.
  • the protective layer thereon is also lifted off, but the dielectric layer and the absorption layer are generally not removed. But if the absorption layer can also react with the corrosive atmosphere, the dielectric layer and the absorption layer can also be removed. So far, the optical effect of the optical anti-counterfeiting element shown in Fig.
  • the first area A has micro-structure optical anti-counterfeiting features, but does not have or has weak interference light characteristics
  • the third area C has obvious interference light change characteristics, but does not have the optical characteristics of microstructures; when viewed through perspective, the second area B has light-transmitting hollow characteristics.
  • the method of manufacturing the optical anti-counterfeiting element shown in Figure 3 generally also includes, after step S24, printing other functional coatings, for example, forming an adhesive layer to bond with the protected product, as shown in Figure 12 .
  • the method for preparing an optical anti-counterfeiting element according to the present invention is suitable for manufacturing window security threads, labels, logos, wide strips, transparent windows, films, etc.
  • the anti-counterfeiting paper with the security thread for opening the window is used for anti-counterfeiting of various high-security products such as banknotes, passports, and securities.
  • the program is stored in a storage medium and includes several instructions to enable the single-chip microcomputer, chip or processor (processor) Execute all or part of the steps of the method described in each embodiment of this application.
  • the aforementioned storage media include: U disk, mobile hard disk, read-only memory (ROM, Read-Only Memory), random access memory (RAM, Random Access Memory), magnetic disk or optical disk and other media that can store program code .

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Abstract

一种光学防伪元件及其制作方法。该光学防伪元件包括：起伏结构层（2），起伏结构层（2）具有第一区域（A）、第二区域（B）和第三区域（C），第一区域（A）具有第一微结构，第二区域（B）具有第二微结构，第三区域（C）为无结构的平坦区域，第二微结构的比体积大于第一微结构，第一区域（A）和第三区域（C）均具有重叠的反射层（31）、介电层（32）和吸收层（33），且第二区域（B）不具有反射层，位于第一区域（A）的介电层远离起伏结构层一侧的表面形貌与起伏结构层的表面形貌明显不同。光学防伪元件一侧反射观察时，第一区域具有较弱的或不具有干涉光变效果，第三区域具有明显的干涉光变效果，透视观察时，第二区域具有镂空效果。

Description

光学防伪元件及其制作方法 技术领域
本发明涉及光学防伪技术领域，具体地涉及一种光学防伪元件、一种光学防伪元件的制作方法。
背景技术
为了防止利用扫描和复印等手段产生的伪造，钞票、信用卡、护照、有价证券和产品包装等各类高安全或高附加值印刷品中广泛采用了光学防伪技术，并且取得了非常好的效果。
在各种光学防伪技术中，微结构形成的光学效果包括衍射、非衍射等效果因与图像设计兼容性好、动感效果明显而得到了广泛应用。微结构光学防伪技术为了增加图像的亮度，一般采用金属反射层，比如铝。其中，目前应用于光学薄膜的最为广泛的光学防伪技术——全息技术即是利用光学微结构形成的衍射效果而发展的光学技术。第五套1999版的5元、10元、20元、50元、100元人民币的防伪线就采用了全息技术，在晃动人民币票面时，可以观察到闪亮的全息票面数字图像。另外，多层干涉光变技术因在不同的观察视角下呈现出强烈的光学变色效果而越来越受到人们的重视。多层干涉光变技术一般采用气相沉积的方法实现反射层、介质层和吸收层的蒸镀。反射层、介质层和吸收层构成了干涉光变镀层的基本单元。作为反射层的材料一般较厚，反射率高，而作为吸收层的材料一般较薄，具有半透明的特征。介电层为透明材料，若厚度满足一定的条件，光线可以在平行的反射层和吸收层形成的法伯罗腔中发生干涉。从吸收层一侧观察，干涉光变镀层在不同的角度呈现出不同的颜色。第五套2015版100元人民币安全线就是采用了多层干涉光变技术，正面观察为品红色，倾斜观察为绿色。如果将全息、非衍射等光学微结构防伪技术和多层干涉光变技术集成到同一产品中则能有效发挥全息、非衍射呈现的动感效果和多层镀层呈现的光变效果，可在一定程度上增强防伪效果。但若在光学微结构上直接蒸镀多层干涉镀层，则光学微结构呈现的光学效果和干涉光变效果存在互相削弱的缺点。
专利申请CN 200980104829.3提出通过局部印刷镂空工艺实现了多层干涉光变和高亮度反射微结构(包括衍射微结构和非衍射微结构)光学特征相集成的光学防伪产品的制备，即部分区域具有多层干涉光变特征，部分区域具有高亮度反射微结构光学特征，其他区域则具有镂空效果。然而，该专利申请中局部镂空区域的精度取决于印刷的精度，而印刷的精度一般在100um以上，在一定程度上限制了高端防伪光学产品中的应用。
因此，制作具有相互独立的光学微结构(如全息、非衍射等)防伪特征和多层干涉光变光学特征，并且镂空区域相对于光学微结构图像区是高精度的，甚至可以用作零误差定位的光学防伪元件，对光学防伪元件特征定位的研究具有重要的意义。
发明内容
本发明实施例的目的是提供一种光学防伪元件及其制作方法，该光学防伪元件含有相互独立的光学微结构(如全息、非衍射等)防伪特征和多层干涉光变光学特征，并且具有与光学微结构图像严格定位的镂空区域。
为了实现上述目的，本发明实施例提供一种光学防伪元件，包括：起伏结构层，所述起伏结构层具有第一区域、第二区域和第三区域；所述第一区域具有第一微结构；所述第二区域具有第二微结构；所述第三区域为无结构的平坦区域；其中，所述第二微结构的比体积大于所述第一微结构的比体积；其中，所述第一区域和所述第三区域均具有重叠的反射层、介电层和吸收层，且所述第二区域不具有反射层；其中，位于所述第一区域的介电层远离所述起伏结构层一侧的表面形貌与所述起伏结构层的表面形貌明显不同。需要注意的是，此处第一区域、第二区域和第三区域，并不应仅仅视为在所述起伏结构层上的一种固定顺序，也可以是第二区域、第一区域和第三区域等其他任意排布的顺序。光学防伪元件反射观察时，第一区域呈现第一微结构呈现的特定图像，并且没有或者具有较弱的干涉光变效果，而第三区域具有明显的干涉光变效果，透视观察时，第二区域是具有透光镂空效果，且与第一区域呈现的图像是严格定位的。所谓微结构的比体积是指将光学防伪元件放置水平，设想微结构中恰好盛满的液体的体积与其投影面积的比值，其单位为um 3/um 2。设置第二区域的微结构与第一区域的微结构的差 别，是为了镂空的需要，即小的比体积的微结构上的反射层得以保留，大的比体积上的微结构的反射层得以去除。将继续在具体实施方式部分更深入讨论这一问题。
可选的，所述第一微结构为周期性结构和非周期性结构中的一种结构，或为周期性结构和非周期性结构组合的结构；
所述第一微结构沿延展方向的横截面结构为：
正弦型结构、矩形光栅结构、半圆形结构、闪耀光栅结构中的一种结构，或正弦型结构、矩形光栅结构、半圆形结构、闪耀光栅结构中至少任意两种结构组合的结构。
可选的，所述第一微结构的比体积范围为大于0.05um 3/um 2且小于0.5um 3/um 2。
优选的，所述第一微结构的比体积范围优选为大于0.1um 3/um 2且小于0.3um 3/um 2。
可选的，所述第二微结构为周期性结构和非周期性结构中的一种结构，或周期性结构和非周期性结构组合的结构；
所述第二微结构沿延展方向的横截面结构为：
正弦型结构、矩形光栅结构、半圆形结构、梯形结构、闪耀光栅结构中的一种结构，或正弦型结构、矩形光栅结构、半圆形结构、梯形结构、闪耀光栅结构中至少任意两种结构组合的结构。
可选的，所述第二微结构的比体积范围为大于0.1um 3/um 2且小于1um 3/um 2。
优选的，所述第二微结构的比体积范围优选为大于0.2um 3/um 2且小于0.5um 3/um 2。
可选的，所述反射层的材料包括：
铝、银、铜、锡、铬、镍、钛中的一种金属，或铝、银、铜、锡、铬、镍、钛中至少任意两种金属组合构成的合金；
所述介电层是通过印制形成的；
所述介电层的主树脂包括：
聚氨酯、丙烯酸、聚酯中的一种树脂，或聚氨酯、丙烯酸、聚酯中至少任意两种树脂组合构成的聚合物；
所述吸收层的材料包括：
镍、铬、铝、银、铜、锡、钛中的一种金属，或镍、铬、铝、银、铜、锡、钛中至少任意两种金属组合构成的合金。
可选的，所述反射层与所述起伏结构层相邻接。此处，进一步设定了各层顺序，若选所述起伏结构层为参考底部，从底部至顶部排序，依次为所述起伏结构层、所述反射层、所述介电层和所述吸收层。
可选的，所述第二区域不具有反射层、介电层和吸收层。
可选的，所述吸收层与所述起伏结构层相邻接。此处，进一步设定了各层顺序，若选所述起伏结构层为参考底部，从底部至顶部排序，依次为所述起伏结构层、所述吸收层、所述介电层和所述反射层。
可选的，所述第二区域具有介电层和吸收层。
本发明实施例提供一种光学防伪元件的制作方法，该制作方法包括：
S1)形成起伏结构层，所述起伏结构层具有第一区域、第二区域和第三区域，所述第一区域具有第一微结构、所述第二区域具有第二微结构、所述第二微结构的比体积大于所述第一微结构的比体积且所述第三区域为无结构的平坦区域；
S2)在所述起伏结构层上，依次形成反射层、介电层和吸收层，其中，通过气相沉积形成反射层、通过印制形成介电层且通过气相沉积形成吸收层；
S3)将步骤S2)的半成品置于能和反射层材料反应的腐蚀氛围中，直至第二区域的反射层被全部或者部分去除为止。
具体的，步骤S3)在所述第二区域的反射层被全部或者部分去除过程中还包括：
所述第二区域的介电层和吸收层也被全部或者部分去除。
本发明实施例还提供一种光学防伪元件的制作方法，该制作方法包括：
S1)形成起伏结构层，所述起伏结构层具有第一区域、第二区域和第三区域，所述第一区域具有第一微结构、所述第二区域具有第二微结构、所述第二微结构的比体积大于所述第一微结构的比体积且所述第三区域为无结构的平坦区域；
S2)在所述起伏结构层上，依次形成吸收层、介电层和反射层，其中，通 过气相沉积形成反射层、通过印制形成介电层且通过气相沉积形成吸收层；
S3)在形成所述反射层后按不同厚度方式施加印制工序形成保护层，所述不同厚度方式为所述第一区域的保护层最小厚度明显大于所述第二区域的保护层最小厚度的方式；
S4)将步骤S3)的半成品置于能和所述反射层的材料反应的腐蚀氛围中进行增透，直至所述第二区域的反射层被全部或者部分去除时为止。
具体的，步骤S4)在所述第二区域的反射层被全部或者部分去除过程中还包括：
所述第二区域的反射层被去除，介电层和吸收层均没有被去除。
具体的，还包括：
继续进行施加无机或者有机的镀层、或者继续进行施加涂层工序，以实现其他的光学防伪功能或者辅助功能。
通过上述内容，本发明实现了具有非对称、表面异构特征的起伏结构层，并使用该起伏结构层制作出了具有多个相对独立局部区域，特别地通过至少具有多层干涉光变特征的区域实现光学防伪元件的局部剖面异构非对称性，该光学防伪元件的多个相对独立局部区域所构成的镂空区域局部图像细节精度高、透射成像清晰。
本发明实施例的其它特征和优点将在随后的具体实施方式部分予以详细说明。
附图说明
附图是用来提供对本发明实施例的进一步理解，并且构成说明书的一部分，与下面的具体实施方式一起用于解释本发明实施例，但并不构成对本发明实施例的限制。在附图中：
图1为本发明实施例的光学防伪元件俯视图；
图2为本发明具有第一表面微结构起伏结构层实施例的沿着图案“X-X”光学防伪元件的剖面图；
图3为本发明具有第二表面微结构起伏结构层实施例的沿着图案“X-X”光学防伪元件的剖面图；
图4为本发明第一表面微结构实施例形成具有第一区域、第二区域和第三区域的起伏结构层后的半成品剖面图；
图5为本发明第一表面微结构实施例形成具有反射层、介电层和吸收层的起伏结构层后的半成品剖面图；
图6为本发明第一表面微结构实施例在起伏结构层第二区域反射层腐蚀后的半成品剖面图；
图7为本发明第一表面微结构实施例在其他功能涂层形成后的半成品剖面图；
图8为本发明第二表面微结构实施例形成具有第一区域、第二区域和第三区域的起伏结构层后的半成品剖面图；
图9为本发明第二表面微结构实施例形成具有反射层、介电层和吸收层的起伏结构层后的半成品剖面图；
图10为本发明第二表面微结构实施例在起伏结构层施加保护层后的半成品剖面图；
图11为本发明第二表面微结构实施例在起伏结构层第二区域反射层腐蚀后的半成品剖面图；
图12为本发明第二表面微结构实施例在其他功能涂层形成后的产品剖面图。
附图标记说明
A图像区域                 B镂空区域
C干涉光变区域             1基材
2起伏结构层               3干涉光变层
31反射层                  32介电层
33吸收层                  4其他功能涂层
5保护层
具体实施方式
以下结合附图对本发明实施例的具体实施方式进行详细说明。应当理解的 是，此处所描述的具体实施方式仅用于说明和解释本发明实施例，并不用于限制本发明实施例。
实施例1
一种光学防伪元件，所述光学防伪元件含有起伏结构层2，所述起伏结构层2至少包括由小的比体积的第一微结构组成的第一区域和由大的比体积的第二微结构组成的第二区域以及平坦的无结构的第三区域；且所述第一区域和第三区域均具有反射层31、印制的介电层32和吸收层33，而第二区域不具有反射层31。
如图1，对于光学防伪元件，取第一区域为图像区域A、第二区域为镂空区域B、以及第三区域为干涉光变区域C。图像区域A具有高亮度反射微结构(如全息或者非衍射光学微结构)光学特征，一般以特定的图像呈现，例如所示的“PY”字母。干涉光变区域C反射观察时，在不同的角度具有不同的颜色。镂空区域C透视观察时具有透光或者半透光效果。镂空区域C与图像区域A是严格定位的，无误差的，例如图1中的镂空区域C严格围绕图像区域A的边界，以图像的轮廓呈现。镂空区域的精细度可以很高，例如，可以小于10um。
图2是根据图1所示的示例性光学防伪元件沿着X-X的一种可能的剖面图。光学防伪元件含有基材1，起伏结构层2，干涉光变层3(包括反射层31、介电层32、吸收层33)，其他功能涂层4。起伏结构层2包括由小的比体积的第一微结构组成的第一区域A和由大的比体积的第二微结构组成的第二区域B以及平坦的无起伏结构的第三区域C。第一区域A和第二区域B均具有反射层31、介电层32和吸收层33，而第二区域B不具有反射层31、介电层32和吸收层33。其中介电层32为印制形成，因而第一区域A的介电层32与起伏结构层2和反射层3不同型覆盖，导致反射层31和吸收层33之间没有形成有效的法伯罗干涉腔，即第一区域A并没有呈现干涉光变效果或者呈现较弱的干涉光变效果。而第三区域C的起伏结构层2为平坦结构，反射层31和吸收层33之间形成有效的法伯罗干涉腔，因而呈现明显的干涉光变效果。第二区域B不具有反射层31、介电层32和吸收层33，因而透视观察呈现高透的镂空效果。其他功能涂层5可以根据需要来设置，比如，作为粘结层，起与被保护的主产品粘合的作用。
图3是根据图1所示的示例性光学防伪元件沿着X-X的另一种可能的剖面 图。光学防伪元件含有基材1，起伏结构层2，干涉光变层3(包括反射层31、介电层32、吸收层33)，保护层5，其他功能涂层4。与图2类似，起伏结构层2包括由小的比体积的第一微结构组成的第一区域A和由大的比体积的第二微结构组成的第二区域B以及平坦的无起伏结构的第三区域C。但与图2不同的是，吸收层33与起伏结构层2邻接，并且第二区域B不具有反射层31，但具有介电层32和吸收层33。由于吸收层33的存在，第二区域B透视观察呈现半透光的镂空效果。保护层5是制作过程中为保护第一区域A和第三区域C上的反射层31而引入的。
下面结合图4对根据本发明涉及的图2所示的光学防伪元件的方法进行描述，该方法可以包括步骤S11至S13。
S11、在基材1上形成起伏结构层2，所述起伏结构层2至少包括由小的比体积的第一微结构组成的第一区域A和由大的比体积的第二微结构组成的第二区域B以及平坦的无结构的第三区域C，如图4所示。
基材1可以是至少局部透明的，也可以是有色的介质层，还可以是表面带有功能涂层的透明介质薄膜，还可以是经过复合而成的多层膜。基材1一般由耐物化性能良好且机械强度高的薄膜材料形成，例如，可以使用聚对苯二甲酸乙二醇酯(PET)薄膜、聚萘二甲酸乙二醇酯(PEN)薄膜及聚丙烯(PP)薄膜等塑料薄膜形成基材1，而且基材1优选由PET材料形成。基材1上可以含有粘结增强层，以增强基材1与起伏结构层2的粘结。
起伏结构层2可以通过紫外浇铸、模压、纳米压印等加工方式进行批量复制形成。例如，起伏结构层2可以由热塑性树脂通过模压工艺形成，即预先涂布在基材1上的热塑性树脂在经过高温的金属模版时，受热而软化变形，从而形成特定的起伏结构，之后冷却成型。起伏结构层2也可以采用辐射固化浇铸工艺形成，即通过将辐射固化树脂涂布在基材1上，一边将原版推压于其上，一边照射紫外线或电子束等放射线，使上述材料固化，然后取下原版从而形成起伏结构层2。
所述起伏结构层2包括由小的比体积的第一微结构组成的第一区域A和由大的比体积的第二微结构组成的第二区域B以及平坦的无结构的第三区域C。第一微结构可以是周期性结构或非周期性结构中的一种或组合，横截面结构可以是 正弦型结构、矩形光栅结构、半圆形结构、闪耀光栅结构中的一种或者组合。第一微结构的具体尺寸(如周期、深度等)由所需要形成的光学效果确定。一般地，为满足呈现特定的光学效果和以后镂空工序的需要，所述第一微结构的比体积要大于0.05um 3/um 2，小于0.5um 3/um 2，更优选地，大于0.1um 3/um 2，小于0.3um 3/um 2。第二微结构也可以是周期性结构或非周期性结构中的一种或组合，横截面结构可以是正弦型结构、矩形光栅结构、半圆形结构、梯形结构、闪耀光栅结构中的一种或者组合。第二微结构完全用于镂空，最终产品中并不形成光学效果，因此可以按照镂空的需要设计微结构的形状。通常来讲，微结构的比体积越大越有利于镂空。但微结构比体积越大，即微结构越宽越深，批量化生产的难度就越高。优选地，所述第二微结构的比体积大于0.1um 3/um 2，小于1um 3/um 2，更优选地，大于0.2um 3/um 2，小于0.5um 3/um 2。
S12、在起伏结构层2上，依次形成反射层31、介电层32和吸收层33，其中，反射层31和吸收层33由气相沉积形成，介电层32由印制形成，如图5所示。
反射层31必须具有强的反射作用，一般采用高反射的金属镀层，可以是单层金属镀层，或是多层金属镀层，或是多金属混合镀层。反射层的材料可以是Al、Cu、Ni、Cr、Ag、Fe、Sn、Au、Pt等金属或其混合物或合金，由于铝的成本低廉且亮度高，因此优选为铝。反射层31由气相沉积的方法形成在起伏结构层2上，例如包括但不限于热蒸发、磁控溅射等。优选地，反射层31以均匀的表面密度、以同型覆盖或者基本同型覆盖的方式形成在起伏结构层2上。反射层的厚度一般选择大于10nm且小于80nm，优选大于20nm且小于50nm。反射层太薄，则亮度不够；反射层太厚，则与起伏结构层的牢度不好，并且成本上升。
介电层32采用印制的工艺实现。这里所说的印制，是指将液体的清漆施加到的薄膜然后干燥固化的工艺，从形成区域上讲，可以形成在薄膜的全部区域(称为涂布工艺)，也可以形成在薄膜的局部区域(称为印刷工艺)，从具体实施技术上讲，可以有喷涂，辊涂，柔印，凹印，丝印等。这样的工艺使得第一区域A的介电层的表面与反射层31不同型覆盖，从而最终形成吸收层之后不具有干涉光变特征或者具有较弱的干涉光变特征。介电层32同时提供下面镂空工序中的保护层的作用。介电层32的印制的量应使得在第一区域A的反射层31的最小 厚度明显小于在第二区域B的反射层31的最小厚度。一般而言，涂层的最小厚度位于微结构的最顶部。这样，在后面的镂空工序中，在能与反射层材料反应的腐蚀氛围中，介电层可以提供对第一区域A的反射层的有效保护，而不能提供对第二区域B的反射层的有效保护。介电层的主树脂可以由聚氨酯、丙烯酸、聚酯或者它们的组合构成。第三区域C作为干涉光变区域，介电层的表面越平坦，越有助于形成有效的法伯罗干涉腔。因此，介电层在印制前应具有很低的粘度，例如低于20cps，这样能够在反射层上更好的流平。对于大多数树脂而言，折射率均在1.5附近，为获得良好的光变效果，介电层的印制厚度应在200nm至800nm范围内。其具体厚度应根据所需要的颜色以及镂空的条件共同来确定。
吸收层33的材料可以是Al、Cu、Ni、Cr、Ag、Fe、Sn、Au、Pt等金属或其混合物或合金，由于镍或铬在很薄的状态下仍具有很高的化学稳定性并且成本很低，因此优选镍或铬。吸收层33通过气相沉积的方法形成，例如包括但不限于热蒸发、磁控溅射等。优选地，吸收层33以均匀的表面密度、以同型覆盖或者基本同型覆盖的方式形成在介电层32上。吸收层的厚度一般较薄，一般小于10nm。吸收层太薄，则光变效果不好；吸收层太厚，则颜色太暗。吸收层的厚度对应的透光率一般大于10％，小于80％，优选大于20％，小于50％。
S13、将半成品置于能和反射层材料31反应的腐蚀氛围中，直至第二区域A的反射层31被全部或者部分去除为止，如图6所示。
如前所述，设置介电层32的印制的量使得其在第一区域A的反射层31的最小厚度明显小于在第二区域B的反射层31的最小厚度。由于吸收层的厚度极小，因此基本不提供对反射层的保护作用。因此，介电层可以提供对第一区域A的反射层的有效保护，而不能提供对第二区域B的反射层的有效保护。在能与反射层材料反应的腐蚀氛围中，一定时间之后，第二区域B的反射层被腐蚀去除，而第一区域A的反射层没有或者基本没有被腐蚀。当然，由于第三区域C没有微结构，因此介电层的厚度是一致的，且厚度很大，在腐蚀氛围中能够对反射层进行有效的保护。一般情况下，第二区域B的反射层被去除后，其上的介电层和吸收层也被浮脱剥离。至此，便形成了图2所示光学防伪元件的光学效果：从吸收层一侧反射观察时，第一区域A具有微结构光学防伪特征，但不具有或者具有较弱的干涉光变特征，而第三区域C具有明显的干涉光变特征，但不具 有微结构光学特征；透视观察时，第二区域B具有透光镂空特征。
制作图2所示光学防伪元件的方法，一般还包括，在S13步骤后，印制其他功能涂层，比如，形成粘结层，起与被保护产品的粘结的作用，如图7所示。
实施例2
下面结合图5对根据本发明涉及的图2所示的光学防伪元件的方法进行描述，该方法可以包括步骤S21至S24。
S21、在基材1上形成起伏结构层2，所述起伏结构层2至少包括由小的比体积的第一微结构组成的第一区域A和由大的比体积的第二微结构组成的第二区域B以及平坦的无结构的第三区域C，如图8所示。
这里涉及到的对基材、起伏结构层的要求与S11步骤中的完全相同。这里不再展开叙述。
S22、在起伏结构层2上，依次形成吸收层33、介电层32和反射层31，其中，反射层31和吸收层33由气相沉积形成，介电层32由印制形成，如图9所示。
这里，吸收层、介电层、反射层形成的顺序与S12是不同的。这样的形成顺序，使得后续的镂空反射层的工序中，仅去除反射层，而不去除吸收层的介电层。介电层的作用只是提供干涉光变特征，而不具有镂空工序时对镀层的保护作用。因此，介电层的厚度设置主要以第三区域C形成所需的干涉光变颜色特征来确定。同时，介电层的施加厚度应保证介电层表面仍具有较大的比体积，以满足后续镂空的需要。
吸收层和反射层对材料和工艺的要求与S12步骤中的完全相同。这里也不再展开叙述。
S23、在反射层上施加印制保护层工序，所述保护层在第一区域的最小厚度明显大于在第二区域的最小厚度，如图10所示。
保护层5提供镂空工序时对第一区域A和第三区域C的反射层的保护作用。因此，保护层5的印制的量应使得其在第一区域A的反射层31的最小厚度明显小于在第二区域B的反射层31的最小厚度。一般而言，涂层的最小厚度位于微结构的最顶部。这样，在后面的镂空工序中，在能与反射层材料31反应的腐蚀氛围中，保护层5可以提供对第一区域A和第三区域C的反射层的有效保护， 而不能提供对第二区域B的反射层的有效保护。保护层5的主树脂可以由聚氨酯、丙烯酸、聚酯或者它们的组合构成。
S24、将半成品置于能和反射层材料反应的腐蚀氛围中，直至第二区域的反射层被全部或者部分去除为止，如图11所示。
在能与反射层31材料反应的腐蚀氛围中，一定时间之后，第二区域B的反射层被腐蚀去除，而第一区域A和第三区域C的反射层没有或者基本没有被腐蚀。这时，第二区域B的反射层被去除后，其上的保护层也被浮脱剥离，而介电层和吸收层一般不会被去除。但如果吸收层也可以和腐蚀氛围发生反应，介电层和吸收层也是可以被去除的。至此，便形成了图3所示光学防伪元件的光学效果：从吸收层一侧反射观察时，第一区域A具有微结构光学防伪特征，但不具有或者具有较弱的干涉光变特征，而第三区域C具有明显的干涉光变特征，但不具有微结构光学特征；透视观察时，第二区域B具有透光镂空特征。
制作图3所示光学防伪元件的方法，一般还包括，在S24步骤后，印制其他功能涂层，比如，形成粘结层，起与被保护产品的粘结的作用，如图12所示。
根据本发明的制备光学防伪元件的方法适合于制作开窗安全线、标签、标识、宽条、透明窗口、覆膜等。带有所述开窗安全线的防伪纸用于钞票、护照、有价证券等各类高安全产品的防伪。
以上结合附图详细描述了本发明实施例的可选实施方式，但是，本发明实施例并不限于上述实施方式中的具体细节，在本发明实施例的技术构思范围内，可以对本发明实施例的技术方案进行多种简单变型，这些简单变型均属于本发明实施例的保护范围。
另外需要说明的是，在上述具体实施方式中所描述的各个具体技术特征，在不矛盾的情况下，可以通过任何合适的方式进行组合。为了避免不必要的重复，本发明实施例对各种可能的组合方式不再另行说明。
本领域技术人员可以理解实现上述实施例方法中的全部或部分步骤是可以通过程序来指令相关的硬件来完成，该程序存储在一个存储介质中，包括若干指令用以使得单片机、芯片或处理器(processor)执行本申请各个实施例所述方法的全部或部分步骤。而前述的存储介质包括：U盘、移动硬盘、只读存储器(ROM，Read-Only Memory)、随机存取存储器(RAM，Random Access Memory)、磁 碟或者光盘等各种可以存储程序代码的介质。
此外，本发明实施例的各种不同的实施方式之间也可以进行任意组合，只要其不违背本发明实施例的思想，其同样应当视为本发明实施例所公开的内容。

Claims (17)

  1. 一种光学防伪元件，其特征在于，包括：
    起伏结构层，所述起伏结构层具有第一区域、第二区域和第三区域；所述第一区域具有第一微结构；所述第二区域具有第二微结构；所述第三区域为无结构的平坦区域；
    其中，所述第二微结构的比体积大于所述第一微结构的比体积；
    其中，所述第一区域和所述第三区域均具有重叠的反射层、介电层和吸收层，且所述第二区域不具有反射层；
    其中，位于所述第一区域的介电层远离所述起伏结构层一侧的表面形貌与所述起伏结构层的表面形貌明显不同。
  2. 根据权利要求1所述的光学防伪元件，其特征在于，
    所述第一微结构为周期性结构和非周期性结构中的一种结构，或为周期性结构和非周期性结构组合的结构；
    所述第一微结构沿延展方向的横截面结构为：正弦型结构、矩形光栅结构、半圆形结构、闪耀光栅结构中的一种结构，或正弦型结构、矩形光栅结构、半圆形结构、闪耀光栅结构中至少任意两种结构组合的结构。
  3. 根据权利要求1所述的光学防伪元件，其特征在于，
    所述第一微结构的比体积范围为大于0.05um 3/um 2且小于0.5um 3/um 2。
  4. 根据权利要求3所述的光学防伪元件，其特征在于，
    所述第一微结构的比体积范围为大于0.1um 3/um 2且小于0.3um 3/um 2。
  5. 根据权利要求1所述的光学防伪元件，其特征在于，
    所述第二微结构为周期性结构和非周期性结构中的一种结构，或周期性结构和非周期性结构组合的结构；
    所述第二微结构沿延展方向的横截面结构为：正弦型结构、矩形光栅结构、半圆形结构、梯形结构、闪耀光栅结构中的一种结构，或正弦型结构、矩形光栅结构、半圆形结构、梯形结构、闪耀光栅结构中至少任意两种结构组合的结构。
  6. 根据权利要求1所述的光学防伪元件，其特征在于，
    所述第二微结构的比体积范围为大于0.1um 3/um 2且小于1um 3/um 2。
  7. 根据权利要求6所述的光学防伪元件，其特征在于，
    所述第二微结构的比体积范围为大于0.2um 3/um 2且小于0.5um 3/um 2。
  8. 根据权利要求1所述的光学防伪元件，其特征在于，
    所述反射层的材料包括：铝、银、铜、锡、铬、镍、钛中的一种金属，或铝、银、铜、锡、铬、镍、钛中至少任意两种金属组合构成的合金；
    所述介电层是通过印制形成的；
    所述介电层的主树脂包括：聚氨酯、丙烯酸、聚酯中的一种树脂，或聚氨酯、丙烯酸、聚酯中至少任意两种树脂组合构成的聚合物；
    所述吸收层的材料包括：镍、铬、铝、银、铜、锡、钛中的一种金属，或镍、 铬、铝、银、铜、锡、钛中至少任意两种金属组合构成的合金。
  9. 根据权利要求1所述的光学防伪元件，其特征在于，
    所述反射层与所述起伏结构层相邻接。
  10. 根据权利要求9所述的光学防伪元件，其特征在于，
    所述第二区域不具有介电层和吸收层。
  11. 根据权利要求1所述的光学防伪元件，其特征在于，
    所述吸收层与所述起伏结构层相邻接。
  12. 根据权利要求1所述的光学防伪元件，其特征在于，
    所述第二区域具有介电层和吸收层。
  13. 一种光学防伪元件的制作方法，其特征在于，该制作方法包括：
    S1)形成起伏结构层，所述起伏结构层具有第一区域、第二区域和第三区域，所述第一区域具有第一微结构、所述第二区域具有第二微结构、所述第二微结构的比体积大于所述第一微结构的比体积且所述第三区域为无结构的平坦区域；
    S2)在所述起伏结构层上，依次形成反射层、介电层和吸收层，其中，通过气相沉积形成反射层、通过印制形成介电层且通过气相沉积形成吸收层；
    S3)将步骤S2)的半成品置于能和反射层材料反应的腐蚀氛围中，直至第二区域的反射层被全部或者部分去除为止。
  14. 根据权利要求13所述的制作方法，其特征在于，步骤S3)在所述第二区域的反射层被全部或者部分去除过程中还包括：
    所述第二区域的介电层和吸收层也被全部或者部分去除。
  15. 一种光学防伪元件的制作方法，其特征在于，该制作方法包括：
    S1)形成起伏结构层，所述起伏结构层具有第一区域、第二区域和第三区域，所述第一区域具有第一微结构、所述第二区域具有第二微结构、所述第二微结构的比体积大于所述第一微结构的比体积且所述第三区域为无结构的平坦区域；
    S2)在所述起伏结构层上，依次形成吸收层、介电层和反射层，其中，通过气相沉积形成反射层、通过印制形成介电层且通过气相沉积形成吸收层；
    S3)在形成所述反射层后按不同厚度方式施加印制工序形成保护层，所述不同厚度方式为所述第一区域的保护层最小厚度明显大于所述第二区域的保护层最小厚度的方式；
    S4)将步骤S3)的半成品置于能和所述反射层的材料反应的腐蚀氛围中进行增透，直至所述第二区域的反射层被全部或者部分去除时为止。
  16. 根据权利要求15所述的制作方法，其特征在于，步骤S4)在所述第二区域的反射层被全部或者部分去除过程中还包括：
    所述第二区域的反射层被去除，介电层和吸收层均没有被去除。
  17. 根据权利要求13至16中任意一项权利要求所述的制作方法，还包括：
    继续进行施加无机或者有机的镀层、或者继续进行施加涂层工序，以实现其他的光学防伪功能或者辅助功能。
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