WO2020244219A1 - 近红外窄带滤光片及制作方法 - Google Patents

近红外窄带滤光片及制作方法 Download PDF

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Publication number
WO2020244219A1
WO2020244219A1 PCT/CN2019/130539 CN2019130539W WO2020244219A1 WO 2020244219 A1 WO2020244219 A1 WO 2020244219A1 CN 2019130539 W CN2019130539 W CN 2019130539W WO 2020244219 A1 WO2020244219 A1 WO 2020244219A1
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Prior art keywords
refractive index
sio
film system
pass film
infrared
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PCT/CN2019/130539
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English (en)
French (fr)
Inventor
肖念恭
方叶庆
丁维红
陈策
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Xinyang Sunny Optics Co Ltd
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Xinyang Sunny Optics Co Ltd
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Priority to SG11202111627UA priority Critical patent/SG11202111627UA/en
Priority to KR1020217034650A priority patent/KR20220002319A/ko
Priority to JP2021563621A priority patent/JP7407839B2/ja
Priority to EP19932063.1A priority patent/EP3982172A4/en
Publication of WO2020244219A1 publication Critical patent/WO2020244219A1/zh
Priority to US17/516,922 priority patent/US20220120949A1/en
Anticipated expiration legal-status Critical
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    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B5/00—Optical elements other than lenses
    • G02B5/20—Filters
    • G02B5/28—Interference filters
    • G02B5/281—Interference filters designed for the infrared light
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/10—Glass or silica
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/221—Ion beam deposition
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B1/00—Optical elements characterised by the material of which they are made; Optical coatings for optical elements
    • G02B1/02—Optical elements characterised by the material of which they are made; Optical coatings for optical elements made of crystals, e.g. rock-salt, semi-conductors
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B5/00—Optical elements other than lenses
    • G02B5/20—Filters
    • G02B5/28—Interference filters
    • G02B5/285—Interference filters comprising deposited thin solid films
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B5/00—Optical elements other than lenses
    • G02B5/20—Filters
    • G02B5/28—Interference filters
    • G02B5/285—Interference filters comprising deposited thin solid films
    • G02B5/288—Interference filters comprising deposited thin solid films comprising at least one thin film resonant cavity, e.g. in bandpass filters

Definitions

  • This application relates to the field of optical elements, and specifically to a near-infrared narrowband filter and a manufacturing method.
  • the embodiments of the present application provide a near-infrared narrowband filter and a manufacturing method.
  • an embodiment of the present application provides a near-infrared narrowband filter, including: a substrate; a narrowband pass film system, the narrowband pass film system is disposed on the first side of the substrate; and a wideband pass film system or long wave A pass film system, wherein the wide band pass film system is disposed on a second side of the substrate opposite to the first side, and the pass band of the wide band pass film system is larger than that of the narrow band pass film system,
  • the long wave pass film is disposed on a second side of the substrate opposite to the first side, and the pass band of the long wave pass film is greater than the pass band of the narrow band pass film, wherein the narrow band pass film Including a high refractive index layer with a refractive index greater than 3 and a low refractive index layer with a refractive index less than 3 in the wavelength range of 780 to 3000 nm, and wherein the reflection color of the near-infrared narrowband filter satisfies the CIE xyz coordinate
  • the reflection color of the near-infrared narrowband filter satisfies: x ⁇ 0.509; y ⁇ 0.363; and z ⁇ 30% in the CIE xyz coordinate system.
  • the narrow bandpass film system further includes a middle refractive index layer, wherein: the refractive index of the middle refractive index layer is between the refractive index of the high refractive index layer and the refractive index of the low refractive index layer Rate between.
  • the high refractive index layer is formed of one or more of silicon hydride, Si x Ge 1-x and Si x Ge 1-x : H, or the high refractive index germanium-based layer
  • germanium hydride, Si x Ge 1-x and Si x Ge 1-x : H are formed.
  • the low refractive index layer is composed of one of SiO 2 , Si 3 N 4 , SiO x N y , Ta 2 O 5 , Nb 2 O 5 , TiO 2 , Al 2 O 3 , SiCN and SiC The formation of one or more substances.
  • it further includes: a plurality of medium refractive index layers with a refractive index ranging from 1.7 to 4.5 in the wavelength range of 780 to 3000 nm.
  • the middle refractive index layer is composed of hydrogenated amorphous silicon oxide (a-SiO x :H y ), hydrogenated amorphous silicon nitride (a-SiN x :H y ), hydrogenated amorphous germanium oxide ( a-GeO x :H y ), hydrogenated amorphous germanium nitride (a-GeN x :H y ), hydrogenated amorphous silicon germanium oxide (a-Si z Ge 1-z O x :H y ) and hydrogenated amorphous One or more substances in silicon germanium nitride (a-Si z Ge 1-z N x :H y ) are formed.
  • the center wavelength shift of the passband of the narrowband pass film system is less than 16 nm.
  • the center wavelength of the p light and the s light of the near-infrared narrowband filter drifts below 5 nm.
  • the total thickness of the narrow band pass film system and the wide band pass film system or the long wave pass film system is less than 15 ⁇ m.
  • an embodiment of the present application provides a method for manufacturing a near-infrared narrowband filter, including: alternately plating a low refractive index layer and a high refractive index layer on the first side of a substrate to form a narrow band pass film system, And plating a wide band pass film system or a long wave pass film system on the second side of the substrate opposite to the first side, wherein: the wide band pass film system or the long wave pass film system has a pass bandwidth greater than the The pass band of a narrow band pass film system; the narrow band pass film system includes a high refractive index layer with a refractive index greater than 3 and a low refractive index layer with a refractive index less than 3 in the wavelength range of 780 to 3000 nm; and the near-infrared narrow band filter In the CIE xyz coordinate system, the reflected color of the light sheet satisfies: x ⁇ 0.509; y ⁇ 0.363; and z ⁇ 50%.
  • the manufacturing method is a coating method by sputtering coating or evaporation coating.
  • forming a narrow bandpass film system further includes: plating a middle refractive index layer, the refractive index of the middle refractive index layer is between the refractive index of the high refractive index layer and the refractive index of the low refractive index layer Rate between.
  • the method further includes: bombarding the target with a charged ion beam obtained by glow discharge based on silicon, germanium, argon, hydrogen, and oxygen to plate the middle refractive index layer, and the middle refractive index
  • the rate layer includes a-SiO x :H y , a-SiN x :H y , a-GeO x :H y , a-GeN x :H y , a-Si z Ge 1-z O x :H y and a -Si z Ge 1-z N x : H y of one or more substances.
  • the near-infrared narrowband filter and manufacturing method provided by the embodiments of the present application are provided on the first side of the substrate with a narrow band pass having a high refractive index layer with a refractive index greater than 3 at 780-3000 nm and a low refractive index layer with a refractive index less than 3
  • the film system is provided on the second side of the substrate with a broadband pass film system having a high refractive index layer with a refractive index greater than 3 at 780-3000 nm and a low refractive index layer with a refractive index less than 3, and the bandwidth of the broadband pass film system is greater than
  • the passband of the narrow-band pass film system is used to form a narrow-band pass mask system and a long-wave pass mask system that satisfies the dark reflection color condition of z ⁇ 50% and x ⁇ 0.509 and y ⁇ 0.363 in the filter coating structure.
  • FIG. 1 is a schematic diagram of the structure of a near-infrared narrowband filter provided by an embodiment of the application;
  • Fig. 2 is a flow chart of a method for manufacturing a near-infrared narrowband filter provided by an embodiment of the application;
  • FIG. 3a is a diagram showing the relationship between reflectivity and wavelength of a bright reflection color narrowband filter provided in Embodiment 1 of the application;
  • FIG. 3b is a graph of the relationship between reflectivity and wavelength of the dark reflection color narrowband filter provided in Embodiment 1 of the application;
  • 4a is a diagram showing the relationship between reflectivity and wavelength of the bright reflection color narrowband filter provided in the second embodiment of the application;
  • 4b is a diagram showing the relationship between reflectivity and wavelength of the dark reflection color narrowband filter provided in the second embodiment of the application;
  • FIG. 5a is a diagram showing the relationship between reflectivity and wavelength of the bright reflection color narrowband filter provided in the third embodiment of the application.
  • FIG. 5b is a graph showing the relationship between reflectivity and wavelength of the dark reflection color narrowband filter provided in the third embodiment of the application.
  • FIG. 6a is a graph showing the relationship between reflectivity and wavelength of the dark reflection color narrowband filter provided in the fourth embodiment of the application.
  • 6b is a graph showing the relationship between reflectivity and wavelength of the dark reflection color narrowband filter provided in the fourth embodiment of the application;
  • FIG. 7 is a structural diagram of an optical system provided by an embodiment of the application.
  • first, second, third, etc. are only used to distinguish one feature from another feature, and do not represent any restriction on the feature. Therefore, without departing from the teachings of the present application, the first side discussed below may also be referred to as the second side. vice versa.
  • the thickness of the film layer refers to the thickness in the direction away from the substrate.
  • Existing near-infrared narrowband filters use interference principles and combine the absorption characteristics of materials to achieve specific narrowband characteristics, such as passband bandwidth, passband reflectivity, high cutoff, and low angle drift of the center wavelength. For example, combining the high absorption of high refractive index Si:H in the visible light region and the characteristics of high refractive index and low absorption in the near-infrared band from 780nm to 1100nm are used to make corresponding filters.
  • the existing near-infrared narrow-band filter has an average reflectivity of more than 25% in the visible region, and even some wavelengths are as high as 90%, so that the filter appears red (magenta, deep red, purple, etc.), green (dark green) , Its reflected light intensity is high, and the reflected color brightness is high.
  • the under-screen devices and on-board devices in the full screen of mobile phones require filters with diverse reflection colors, low reflection energy intensity, and low reflection color brightness in specific applications.
  • FIG. 1 is a schematic diagram of the structure of the near-infrared narrow-band filter provided by an embodiment of the application, as As shown in Figure 1, the near-infrared narrowband filter includes:
  • Substrate 11 a narrow band pass film system 12 and a wide band pass film system or a long wave pass film system 13 provided on the first side of the substrate 11, and the wide band pass film system or long wave pass film system 13 is provided on the substrate 11
  • the pass band of the wide band pass film system or the long wave pass film system 13 is greater than the pass band of the narrow band pass film system 12, and the narrow band pass film system 12 is included in the range of 780 ⁇
  • the reflection color of the near-infrared narrowband filter satisfies: x ⁇ 0.509; y ⁇ 0.363; and z ⁇ 50%.
  • the near-infrared narrowband filter provided by the embodiment of the present application is provided with a high refractive index layer 121 with a refractive index greater than 3 at 780-3000 nm and a low refractive index layer 122 with a refractive index less than 3 on the first side of the substrate.
  • Narrow band pass film system on the second side of the substrate is provided with a wide band pass film with a high refractive index layer 131 or a high refractive index germanium base layer 131 with a refractive index greater than 3 at 780-3000 nm and a low refractive index layer 132 with a refractive index less than 3 System, and make the above-mentioned near-infrared narrowband filter with narrowband pass film system and wideband pass film system meet the dark reflection color conditions of z ⁇ 50% and x ⁇ 0.509 and y ⁇ 0.363, so as to meet the application of mobile terminal or vehicle terminal Near-infrared narrow-band filter with diversified reflection colors, low reflection energy intensity, and low reflection color brightness.
  • the narrow-band pass film system in the near-infrared narrow-band filter may further include a middle refractive index layer.
  • the refractive index of the middle refractive index layer is between the refractive index of the high refractive index layer and the refractive index of the low refractive index layer, so that the narrow band pass film system of the near-infrared narrowband filter can have 3 Layers of refraction layers with different refractive indexes, so as to obtain a near-infrared narrowband filter with diversified reflection colors, low reflection energy intensity, and low reflection color brightness, to meet the application requirements of under-screen devices in the full screen of mobile phones and automotive devices.
  • the high refractive index layer in the near-infrared narrowband filter is composed of one of hydrogenated silicon, Si x Ge 1-x and Si x Ge 1-x : H It is formed of one or more materials, or the high refractive index germanium-based layer is formed of one or more of germanium hydride, Si x Ge 1-x and Si x Ge 1-x :H.
  • the high refractive index layer may be hydrogenated silicon, Si x Ge 1-x, and Si x Ge 1-x : H One or more of the materials are mixed and plated; when a film system with a high refractive index germanium-based layer is formed, the high refractive index germanium-based layer is composed of germanium hydride, Si x Ge 1-x and Si x Ge 1-x : H One or more of the materials are mixed and plated.
  • the low refractive index layer in the near-infrared narrowband filter provided by the embodiment of the present application is composed of SiO 2 , Si 3 N 4 , SiO x N y , Ta 2 O 5 , Nb 2 O 5.
  • One or more of TiO 2 , Al 2 O 3 , SiCN and SiC are formed. That is, the near-infrared narrow-band filter provided by the embodiment of the present application is used to form two low-refractive-index layers of film systems.
  • One or more of TiO 2 , Al 2 O 3 , SiCN and SiC are mixed and plated.
  • the near-infrared narrowband filter provided by the embodiments of the present application further includes: a plurality of matching layers with a refractive index ranging from 1.7 to 4.5 in the wavelength range of 780 to 3000 nm. That is, the near-infrared narrowband filter provided by the embodiment of the present application further includes a plurality of matching layers.
  • the mid-refractive index layer in the near-infrared narrowband filter is composed of a-SiO x :H y , a-SiN x :H y , and a-GeO x :
  • a-SiO x :H y a-SiO x :H y
  • a-GeO x One or more of H y , a-GeN x :H y , a-Si z Ge 1-z O x :H y and a-Si z Ge 1-z N x :H y are formed.
  • the mid-refractive index layer in the near-infrared narrowband filter may choose a-SiO x :H y , a-SiN x :H y , a-GeO x :H y , a-GeN
  • x :H y , a-Si z Ge 1-z O x :H y and a-Si z Ge 1-z N x :H y are mixed and plated.
  • the near-infrared narrow-band filter provided by the embodiment of the application is plated on both sides of the narrow-band pass film system, wide-band pass film system or long-band pass film system, and the reflection color in the near-infrared narrow-band filter is formed in the CIE xyz coordinate
  • the system can satisfy: x ⁇ 0.509; y ⁇ 0.363; and z ⁇ 30%.
  • the reflection color in the near-infrared narrow-band filter is formed in the CIE xyz coordinate system to satisfy: reflection If x ⁇ 0.509; y ⁇ 0.363; and z ⁇ 30%, the obtained near-infrared narrow-band filter can better meet the diversification of near-infrared narrow-band filters in the full screen of mobile phones and in-vehicle devices Application requirements for reflection color, low reflection energy intensity, and low reflection color brightness.
  • the near-infrared narrow-band filter provided by the embodiment of the present application, when incident light enters the near-infrared narrow-band filter at a range of 0 degrees to 30 degrees, the narrow-band
  • the center wavelength drift of the passband of the pass film system is below 16nm, that is, the center wavelength drift amplitude of the passband band is less than 16nm.
  • the near-infrared narrow-band filter provided by the embodiment of the present application
  • the incident light enters the near-infrared narrow-band filter from 0 degrees to 30 degrees
  • the narrow-band pass film The center wavelength drift of the passband is below 16nm to obtain a near-infrared narrowband filter with better plating performance.
  • the center wavelength of the p light and the s light of the near-infrared narrowband filter provided in the embodiment of the present application drifts below 5 nm. That is, when the near-infrared narrow-band filter provided by the embodiment of the present application is used, the center wavelengths of p-light and s-light drift below 5 nm, so as to obtain a near-infrared narrow-band filter with better plating performance.
  • the total thickness of the narrowband pass film system and the wideband pass film system in the near-infrared narrowband filter provided by the embodiment of the present application is less than 15 ⁇ m. That is, after the near-infrared narrow-band filter provided by the embodiment of the application is plated on both sides of the film system, the total thickness of the narrow-band pass film system and the wide-band pass film system is less than 15 ⁇ m, making the thickness of the near-infrared narrow-band filter thinner and convenient use.
  • FIG. 2 is a flowchart of the method for manufacturing a near-infrared narrowband filter provided by an embodiment of the application. As shown in FIG. 2, the method includes:
  • Step 21 alternately plating a low refractive index layer and a high refractive index layer on the first side of the substrate to form a narrow band pass film system
  • the reflection color of the narrowband filter satisfies in the CIE xyz coordinate system: x ⁇ 0.509; y ⁇ 0.363; and z ⁇ 50%.
  • the manufacturing method of the near-infrared narrow-band filter provided by the embodiment of the present application is achieved by plating a narrow band with a high refractive index layer with a refractive index greater than 3 at 780-3000 nm and a low refractive index layer with a refractive index less than 3 on both sides of the substrate.
  • Pass film system and broadband pass film system to obtain the reflection color in the CIE xyz coordinate system to meet the dark reflection color condition z ⁇ 50% and x ⁇ 0.509 and y ⁇ 0.363 near-infrared narrowband filters to meet the requirements of the full screen of mobile phones
  • Under-screen devices and vehicle-mounted devices require the application of diversified reflection colors, low reflection energy intensity, and low reflection color brightness of near-infrared narrowband filters.
  • the manufacturing method of the near-infrared narrowband filter provided by the embodiments of the present application further includes: coating the high refractive index on both sides of the substrate by sputtering coating or evaporation coating. And the low refractive index layer. That is, the method for manufacturing the near-infrared narrowband filter provided in the embodiments of the present application can adopt sputtering coating or evaporation coating coating process when coating the substrate, and coating the high refractive index layer or the low refractive index layer on both sides of the substrate. Rate layer, and form the corresponding film system, the method is simple, the operation is convenient, and the plating is accurate.
  • the manufacturing method of the near-infrared narrowband filter provided by the embodiments of the present application further includes: plating a middle refractive index layer on one side of the narrowband pass film system, wherein: the middle refractive index layer The refractive index of is between the refractive index of the high refractive index layer and the refractive index of the low refractive index layer.
  • the manufacturing method of the near-infrared narrowband filter provided by the embodiments of the application is coating the substrate, and the above-mentioned two-layer film material (high refractive index layer and low refractive index layer) can be used to obtain narrowband pass film system and broadband Pass film system or long wave pass film system, can also use three layers of film materials, namely high refractive index layer, middle refractive index layer and low refractive index layer to form a broadband pass film system or long wave pass film system, flexible operation, accurate plating.
  • the above-mentioned two-layer film material high refractive index layer and low refractive index layer
  • three layers of film materials namely high refractive index layer, middle refractive index layer and low refractive index layer to form a broadband pass film system or long wave pass film system, flexible operation, accurate plating.
  • the manufacturing method of the near-infrared narrowband filter further includes: bombarding the target with a charged ion beam obtained by glow discharge based on silicon, germanium, argon, hydrogen, and oxygen
  • the medium refractive index layer is plated, and the medium refractive index layer includes a-SiO x :H y , a-SiN x :H y , a-GeO x :H y , a-GeN x :H y , a -Si z Ge 1-z O x :H y and a-Si z Ge 1-z N x :H y
  • One or more substances are possible to be bombarding the target with a charged ion beam obtained by glow discharge based on silicon, germanium, argon, hydrogen, and oxygen
  • the medium refractive index layer is plated, and the medium refractive index layer includes a-SiO x :H y , a-SiN
  • the second side of the filter may be plated with a wide band pass film or a long band pass film.
  • Table 1a is a table of the film thickness of the broadband pass film or the long band pass film. This table reflects the film structure of the broadband pass film or the long band pass film of the near-infrared narrowband filter of this application. Alternately plating layers of different thicknesses to form the required film structure.
  • SiO 2 is a low refractive index dielectric material
  • Si:H is a high refractive index silicon-based material.
  • Table 1b is a table of the film thickness of the bright reflection color narrow band pass film system, which reflects the film structure of the bright reflection color narrow band film system of the near-infrared narrow band pass film system of the near-infrared narrow band pass film system of the present application. Film layers of different thicknesses are plated to form a corresponding film structure, wherein the high refractive index silicon-based material is a-Si:H, and the low refractive index dielectric material is SiO 2 .
  • the double-sided coating filters prepared based on Table 1a and Table 1b are characterized as (0.351, 0.324, 53.03%) and (0.356, 0.315) at 0° and 30° incidence of incident light, respectively , 49.09%).
  • x and y represent the chromaticity coordinates of the color
  • z represents the brightness of the color.
  • FIG. 3a is a graph showing the relationship between reflectivity and wavelength of a filter coated with a narrow bandpass film of bright reflection color provided in Example 1 of the application.
  • Table 1c is a table of the film layer thickness of the dark reflection color narrow band pass film. This table reflects the film structure of the dark reflection color narrow band film of the near-infrared narrow band pass film of the present application.
  • the film layer passes through three A kind of film material is used to plate the film layer of different thickness to form the corresponding film structure.
  • the three film materials are: high refractive index material a-Si:H; low refractive index material SiO 2 ; and medium refractive index material a-SiO x :H y .
  • the double-sided coating filters prepared based on Table 1a and Table 1c are characterized as (0.192, 0.077, 3.8%) and (0.216, 0.08) at 0° and 30° incidence of incident light, respectively , 3.9%).
  • x and y represent the chromaticity coordinates of the color
  • z represents the brightness of the color.
  • FIG. 3b is a graph showing the relationship between reflectivity and wavelength of a filter coated with a dark reflection color narrow bandpass film system provided in Example 1 of the application.
  • Table 1a Thickness of broadband pass film or long band pass film, unit: nm
  • Table 1b Thickness of bright reflection color narrow band pass film, unit: nm
  • Table 1c Thickness of dark reflection color narrow band pass film, unit: nm
  • the second side of the filter may be plated with a wide band pass film or a long band pass film.
  • Table 2a is a table of the film thickness of the broadband pass film system or the long band pass film system, which reflects the film layer structure of the broadband pass film system or the long band pass film system of the near-infrared narrowband filter of the present application. Alternately plating layers of different thicknesses to form the required film structure.
  • SiO 2 is a low refractive index dielectric material
  • TiO 2 is a high refractive index material.
  • Table 2b is a table of the film thickness of the bright reflection color narrow band pass film. This table reflects the film structure of the bright reflection color narrow band film of the near-infrared narrow band pass film of the present application, which is also alternated by two film materials Film layers of different thicknesses are plated to form a corresponding film structure, wherein the high refractive index silicon-based material is a-Si:H, and the low refractive index dielectric material is SiO 2 .
  • the double-sided coating filters prepared based on Table 2a and Table 2b are characterized as (0.351, 0.324, 53.03%) and (0.356, 0.315) at 0° and 30° incidence of incident light, respectively , 49.09%).
  • x and y represent the chromaticity coordinates of the color
  • z represents the brightness of the color.
  • 4a is a graph showing the relationship between reflectivity and wavelength of a filter coated with a narrow bandpass film of bright reflection color provided in the second embodiment of the application.
  • Table 2c is a table of the film thickness of the dark reflection color narrow band pass film system, which reflects the film layer structure of the dark reflection color narrow band film system of the near-infrared narrow band pass film system of the near-infrared narrow band pass film system of the present application.
  • the film layers of different thicknesses are plated to form the corresponding film structure, in which the high refractive index silicon-based material a-Si:H, and the low refractive index dielectric material SiO 2 .
  • the double-sided coating filters prepared based on Table 2a and Table 2c are characterized as (0.301, 0.319, 35.22%) and (0.276, 0.309) at 0° and 30° incidence of incident light, respectively , 29.66%).
  • x and y represent the chromaticity coordinates of the color
  • z represents the brightness of the color.
  • 4b is a graph showing the relationship between reflectivity and wavelength of a filter coated with a dark reflection color narrow bandpass film system provided in the second embodiment of the application.
  • Table 2a Thickness of wide band pass film or long band pass film, unit: nm
  • Table 2b Thickness of bright reflection color narrow band pass film, unit: nm
  • Table 2c Thickness of dark reflection color narrow band pass film, unit: nm
  • the second side of the filter may be plated with a wide band pass film or a long band pass film.
  • Table 3a is a table of the film layer thickness of the broadband pass film system or the long band pass film system. This table reflects the film layer structure of the broadband pass film system or the long band pass film system of the near-infrared narrowband filter of this application. Alternately plating layers of different thicknesses to form the required film structure.
  • SiO 2 is a low refractive index dielectric material
  • Si:H is a high refractive index silicon-based material.
  • Table 3b is a table of the film thickness of the bright reflection color narrow band pass film. This table reflects the film structure of the bright reflection color narrow band film of the NIR narrow band pass film of the present application, which is also alternated by two film materials Film layers of different thicknesses are plated to form a corresponding film structure, wherein the high refractive index silicon-based material is a-Si:H, and the low refractive index dielectric material is SiO 2 .
  • the double-sided coating filters prepared based on Table 3a and Table 3b are characterized as (0.366, 0.292, 49.80%) and (0.372, 0.288) at 0° and 30° incidence of incident light, respectively , 49.47%).
  • x and y represent the chromaticity coordinates of the color
  • z represents the brightness of the color.
  • FIG. 5a is a graph showing the relationship between reflectivity and wavelength of a filter coated with a narrow bandpass film of bright reflection color provided in the third embodiment of the application.
  • Table 3c is a table of the film thickness of the dark reflection color narrow band pass film. This table reflects the film structure of the dark reflection color narrow band film of the near-infrared narrow band pass film of the present application.
  • a variety of film materials are used to plate film layers of different thicknesses to form a corresponding film structure. Among them, the two film materials are high refractive index germanium-based material Ge:H and low refractive index dielectric material SiO 2 .
  • the double-sided coating filters prepared based on Table 3a and Table 3c are characterized as (0.339, 0.226, 26.65%) and (0.361, 0.246) at the incident light of 0° and 30°, respectively , 28.07%).
  • x and y represent the chromaticity coordinates of the color
  • z represents the brightness of the color.
  • FIG. 5b is a graph showing the relationship between reflectivity and wavelength of the filter coated with a dark reflection color narrow bandpass film provided in the third embodiment of the application.
  • Table 3a Thickness of broadband pass film or long band pass film, unit: nm
  • Table 3b Thickness of bright reflection color narrow band pass film, unit: nm
  • Table 3c Thickness of dark reflection color narrow band pass film, unit: nm
  • the second side of the filter may be plated with a wide band pass film or a long band pass film.
  • Table 4a is a table of the film thickness of the broadband pass film or the long band pass film. This table reflects the film structure of the broadband pass film or the long band pass film of the near-infrared narrowband filter of this application. Alternate plating of film layers of different thicknesses to form the required film structure.
  • SiO 2 is a low refractive index material
  • Si:H is a high refractive index material.
  • Table 4b is a table of the film thickness of the bright reflection color narrow band pass film, which reflects the film structure of the bright reflection color narrow band film of the near-infrared narrow band pass film of the present application. It is also through the alternation of two film materials Film layers of different thicknesses are plated to form a corresponding film structure, wherein the high refractive index silicon-based material is a-Si:H, and the low refractive index dielectric material is SiO 2 .
  • the double-sided coating filters prepared based on Table 4a and Table 4b are characterized as (0.366, 0.292, 49.80%) and (0.372, 0.288) at the incident light of 0° and 30°, respectively , 49.47%).
  • x and y represent the chromaticity coordinates of the color
  • z represents the brightness of the color.
  • Fig. 6a is a graph showing the relationship between reflectivity and wavelength of a filter coated with a narrow band-pass film of bright reflection color provided in the fourth embodiment of the application.
  • Table 4c is a table of the film thickness of the dark reflection color narrow band pass film. This table reflects the film structure of the bright reflection color narrow band film of the near-infrared narrow band pass film of the present application, which is also alternated by two film materials Coating layers of different thicknesses to form the corresponding film structure. Among them, the two film materials are high refractive index material Si x Ge 1-x :H and low refractive index dielectric material SiO 2 .
  • the double-sided coated filters prepared based on Table 4a and Table 4c are characterized as (0.222, 0.179, 12.33%) and (0.232, 0.183) at 0° and 30° incident light incidence, respectively , 11.97%).
  • x and y represent the chromaticity coordinates of the color
  • z represents the brightness of the color.
  • FIG. 6b is a graph showing the relationship between reflectivity and wavelength of a filter coated with a dark reflection color narrow bandpass film provided in the fourth embodiment of the application.
  • Table 4a Thickness of broadband or long bandpass film, unit: nm
  • Table 4b Thickness of bright reflection color narrow band pass film, unit: nm
  • Table 4c Thickness of dark reflection color narrow band pass film, unit: nm
  • the embodiment of the present application also provides an optical system, which includes an infrared image sensor and the aforementioned filter 5, and the filter 5 is arranged on the photosensitive side of the infrared image sensor.
  • FIG. 7 is a structural diagram of an optical system provided by an embodiment of the application. As shown in FIG. 7, it includes an infrared (Infrared Radation, IR) light source 2, a first lens assembly 3, a second lens assembly 4, and a filter Light sheet 5 and three-dimensional sensor 6.
  • the light emitted by the infrared light source 2 is irradiated to the surface of the test object 1 through the first lens assembly 3, and the light reflected from the surface of the test object 1 is irradiated to the filter 5 through the second lens assembly 4, and the ambient light is cut off by the filter 5.
  • infrared or part of the red light-transmitting filter 5 irradiates the photosensitive side of the three-dimensional sensor 6 to form image data for processing.
  • the filter 5 has a relatively low center wavelength offset corresponding to oblique light in different directions, the transmitted infrared ray has a high signal-to-noise ratio, and the resulting image quality is good.

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Abstract

一种近红外窄带滤光片（5）及制作方法。滤光片（5）包括：基板（11）；窄带通膜系（12），窄带通膜系（12）设置在基板（11）的第一侧；以及宽带通膜系（13）或长波通膜系（13），其中，宽带通膜系（13）设置在基板（11）的与第一侧相对的第二侧，宽带通膜系（13）的通带宽于窄带通膜系（12）的通带，长波通膜系（13）设置在基板（11）的与第一侧相对的第二侧，长波通膜系（13）的通带宽于窄带通膜系（12）的通带，其中，窄带通膜系（12）包括在780～3000nm的波长范围内折射率大于3的高折射率层（121）以及折射率小于3的低折射率层（122），以及其中，近红外窄带滤光片（5）的反射色在CIE xyz坐标系下满足：x<0.509；y<0.363；以及z<50％，可得到多样化反射色、低反射能量强度、低反射色亮度的近红外窄带滤光片（5），满足手机全面屏中的屏下器件及车载器件应用需求。

Description

近红外窄带滤光片及制作方法
相关申请的交叉引用
本申请要求于2019年6月5日递交于中国国家知识产权局(CNIPA)的、申请号为201910487259.6、发明名称为“近红外窄带滤光片及制作方法”的中国发明专利申请的优先权和权益，该中国发明专利申请通过引用整体并入本文。
技术领域
本申请涉及光学元件领域，具体地，涉及一种近红外窄带滤光片及制作方法。
背景技术
随着科技的进步与发展，滤光片在一些具有人脸识别或手势识别功能的终端上得到广泛应用，比如智能手机、车载激光雷达、安防门禁、智能家居、虚拟现实/增强现实/混合现实、3D体感游戏、3D摄像与显示等终端设备。
而现有的滤光片在终端设备具有应用时，会出现光线反射的问题，因此需要性能更加优良的滤光片，以更好的应用于终端设备。
发明内容
针对现有技术中存在的技术问题，本申请实施例提供一种近红外窄带滤光片及制作方法。
第一方面，本申请实施例提供一种近红外窄带滤光片，包括：基板；窄带通膜系，所述窄带通膜系设置在所述基板的第一侧；以及宽带通膜系或长波通膜系，其中，所述宽带通膜系设置在所述基板的与所述第一侧相对的第二侧，所述宽带通膜系的通带宽于所述窄带通膜系的通带，所述长波通膜系设置在所述基板的与所述第一侧相对的第 二侧，所述长波通膜系的通带宽于窄带通膜系的通带，其中，所述窄带通膜系包括在780～3000nm的波长范围内折射率大于3的高折射率层以及折射率小于3的低折射率层，以及其中，所述近红外窄带滤光片的反射色在CIE xyz坐标系下满足：x<0.509；y<0.363；以及z<50％。
根据本申请实施方式，所述近红外窄带滤光片的反射色在CIE xyz坐标系下满足：x<0.509；y<0.363；以及z<30％。
根据本申请实施方式，所述窄带通膜系还包括中折射率层，其中：所述中折射率层的折射率介于所述高折射率层的折射率与所述低折射率层的折射率之间。
根据本申请实施方式，所述高折射率层由氢化硅、Si xGe 1-x和Si xGe 1-x：H中的一种或多种物质形成，或所述高折射率锗基层由氢化锗、Si xGe 1-x和Si xGe 1-x：H中的一种或多种物质形成。
根据本申请实施方式，所述低折射率层由SiO 2、Si 3N 4、SiO xN y、Ta 2O 5、Nb 2O 5、TiO 2、Al 2O 3、SiCN和SiC中的一种或多种物质形成。
根据本申请实施方式，还包括：在780～3000nm的波长范围内的折射率介于1.7～4.5的多个中折射率层。
根据本申请实施方式，所述中折射率层由氢化非晶氧化硅(a-SiO x:H y)、氢化非晶氮化硅(a-SiN x:H y)、氢化非晶氧化锗(a-GeO x:H y)、氢化非晶氮化锗(a-GeN x:H y)、氢化非晶氧化硅锗(a-Si zGe 1-zO x:H y)和氢化非晶氮化硅锗(a-Si zGe 1-zN x:H y)中的一种或多种物质形成。
根据本申请实施方式，当入射光线以0度至30度之间入射至所述近红外窄带滤光片中时，所述窄带通膜系的通带的中心波长漂移量在16nm以下。
根据本申请实施方式，所述近红外窄带滤光片的p光和s光的中心波长漂移在5nm以下。
根据本申请实施方式，所述窄带通膜系和所述宽带通膜系或所述长波通膜系的总厚度小于15μm。
第二方面，本申请实施例提供一种近红外窄带滤光片的制作方法，包括：在基板的第一侧依次交替镀制低折射率层以及高折射率层，以 形成窄带通膜系，以及在所述基板的与所述第一侧相对的第二侧镀制宽带通膜系或长波通膜系，其中：所述宽带通膜系或所述长波通膜系的通带宽于所述窄带通膜系的通带；所述窄带通膜系包括在780～3000nm的波长范围内折射率大于3的高折射率层以及折射率小于3的低折射率层；以及所述近红外窄带滤光片的反射色在CIE xyz坐标系下满足：x<0.509；y<0.363；以及z<50％。
根据本申请实施方式，该制作方法是通过溅射镀膜或蒸发镀膜的镀膜方法。
根据本申请实施方式，形成窄带通膜系还包括：镀制中折射率层，所述中折射率层的折射率介于所述高折射率层的折射率与所述低折射率层的折射率之间。
根据本申请实施方式，所述方法还包括：基于硅、锗、氩气、氢气以及氧气，通过辉光放电得到的带电离子束轰击靶材以镀制所述中折射率层，所述中折射率层包括a-SiO x:H y、a-SiN x:H y、a-GeO x:H y、a-GeN x:H y、a-Si zGe 1-zO x:H y和a-Si zGe 1-zN x:H y中的一种或多种物质。
本申请实施例提供的近红外窄带滤光片及制作方法在基板的第一侧设置有具有在780～3000nm折射率大于3的高折射率层以及折射率小于3的低折射率层的窄带通膜系，在基板的第二侧设置有具有在780～3000nm折射率大于3的高折射率层以及折射率小于3的低折射率层的宽带通膜系，且宽带通膜系的通带宽于所述窄带通膜系的通带，以形成滤光片镀膜结构中满足暗反射色条件为z<50％且x<0.509和y<0.363的窄带通面膜系和长波通面膜系，得到多样化反射色、低反射能量强度、低反射色亮度的近红外窄带滤光片，满足手机全面屏中的屏下器件及车载器件应用需求。
附图说明
通过阅读参照以下附图所作的对非限制性实施例所作的详细描述，本申请的其它特征、目的和优点将会变得更明显：
图1为本申请实施例提供的近红外窄带滤光片的结构示意图；
图2为本申请实施例提供的近红外窄带滤光片的制作方法流程 图；
图3a为本申请实施例一提供的亮反射色窄带滤光片反射率和波长关系图；
图3b为本申请实施例一提供的暗反射色窄带滤光片反射率和波长关系图；
图4a为本申请实施例二提供的亮反射色窄带滤光片的反射率和波长关系图；
图4b为本申请实施例二提供的暗反射色窄带滤光片的反射率和波长关系图；
图5a为本申请实施例三提供的亮反射色窄带滤光片的反射率和波长关系图；
图5b为本申请实施例三提供的暗反射色窄带滤光片的反射率和波长关系图；
图6a为本申请实施例四提供的暗反射色窄带滤光片的反射率和波长关系图；
图6b为本申请实施例四提供的暗反射色窄带滤光片的反射率和波长关系图；
图7为本申请实施例提供的光学系统结构图。
具体实施方式
为了更好地理解本申请，将参考附图对本申请的各个方面做出更详细的说明。应理解，这些详细说明只是对本申请的示例性实施方式的描述，而非以任何方式限制本申请的范围。在说明书全文中，相同的附图标号指代相同的元件。表述“和/或”包括相关联的所列项目中的一个或多个的任何和全部组合。
应注意，在本说明书中，第一、第二、第三等的表述仅用于将一个特征与另一个特征区分开来，而不表示对特征的任何限制。因此，在不背离本申请的教导的情况下，下文中讨论的第一侧也可被称作第二侧。反之亦然。
在附图中，为了便于说明，已稍微调整了部件的厚度、尺寸和形 状。附图仅为示例而并非严格按比例绘制。例如，第一膜系的厚度与长度之间的比例并非按照实际生产中的比例。如在本文中使用的，用语“大致”、“大约”以及类似的用语用作表近似的用语，而不用作表程度的用语，并且旨在说明将由本领域普通技术人员认识到的、测量值或计算值中的固有偏差。
在本文中，膜层的厚度指是指背离基底的方向的厚度。
还应理解的是，用语“包括”、“包括有”、“具有”、“包含”和/或“包含有”，当在本说明书中使用时表示存在所陈述的特征、元件和/或部件，但不排除存在或附加有一个或多个其它特征、元件、部件和/或它们的组合。此外，当诸如“...中的至少一个”的表述出现在所列特征的列表之后时，修饰整个所列特征，而不是修饰列表中的单独元件。此外，当描述本申请的实施方式时，使用“可”表示“本申请的一个或多个实施方式”。并且，用语“示例性的”旨在指代示例或举例说明。
除非另外限定，否则本文中使用的所有措辞(包括工程术语和科技术语)均具有与本申请所属领域普通技术人员的通常理解相同的含义。还应理解的是，除非本申请中有明确的说明，否则在常用词典中定义的词语应被解释为具有与它们在相关技术的上下文中的含义一致的含义，而不应以理想化或过于形式化的意义解释。
需要说明的是，在不冲突的情况下，本申请中的实施例及实施例中的特征可以相互组合。另外，除非明确限定或与上下文相矛盾，否则本申请所记载的方法中包含的具体步骤不必限于所记载的顺序，而可以任意顺序执行或并行地执行。下面将参考附图并结合实施例来详细说明本申请。
现有近红外窄带滤光片利用干涉原理，并结合材料的吸收特性来实现特定的窄带特性指标，如通带带宽、通带反射率、高截止度、中心波长的低角度漂移。例如结合高折射率Si:H在可见光区域的高吸收性以及近红外波段780nm～1100nm高折射率、低吸收率的特性制作相应的滤光片。
而现有近红外窄带滤光片在可见区域反射率平均值大于25％，甚 至部分波段高达90％以上，以至于滤光片呈现红(品红、深红、紫红等)、绿(墨绿)，其反射光强度大、反射色亮度高。而手机全面屏中的屏下器件及车载器件在具体应用时需要多样化反射色、低反射能量强度、低反射色亮度的滤光片。
为了满足上述手机终端或车载终端的滤光片应用需求，本申请实施例提供了一种近红外窄带滤光片，图1为本申请实施例提供的近红外窄带滤光片的结构示意图，如图1所示，该近红外窄带滤光片包括：
基板11、设置在所述基板11的第一侧的窄带通膜系12以及宽带通膜系或长波通膜系13，所述宽带通膜系或长波通膜系13设置在所述基板11的与所述第一侧相对的第二侧，所述宽带通膜系或长波通膜系13的通带宽于所述窄带通膜系12的通带，所述窄带通膜系12包括在780～3000nm的波长范围内折射率大于3的高折射率层以及折射率小于3的低折射率层。所述近红外窄带滤光片的反射色在CIE xyz坐标系下满足：x<0.509；y<0.363；以及z<50％。
具体地，本申请实施例提供的近红外窄带滤光片在基板的第一侧设置有具有在780～3000nm折射率大于3的高折射率层121以及折射率小于3的低折射率层122的窄带通膜系，在基板的第二侧设置有具有在780～3000nm折射率大于3的高折射率层131或高折射率锗基层131以及折射率小于3的低折射率层132的宽带通膜系，并使得上述具有窄带通膜系和宽带通膜系的近红外窄带滤光片满足z<50％且x<0.509和y<0.363的暗反射色条件，从而获得满足手机终端或车载终端应用的多样化反射色、低反射能量强度、低反射色亮度的近红外窄带滤光片。
在上述实施例的基础上，本申请实施例提供的近红外窄带滤光片中的所述窄带通膜系还可包括中折射率层。所述中折射率层的折射率介于所述高折射率层的折射率与所述低折射率层的折射率之间，使得近红外窄带滤光片的所述窄带通膜系可具有3层不同折射率的折射层，从而得到多样化反射色、低反射能量强度、低反射色亮度的近红外窄带滤光片，满足手机全面屏中的屏下器件及车载器件应用需求。
在上述实施例的基础上，本申请实施例提供的近红外窄带滤光片 中的所述高折射率层由氢化硅、Si xGe 1-x和Si xGe 1-x：H中的一种或多种物质形成，或所述高折射率锗基层由氢化锗、Si xGe 1-x和Si xGe 1-x：H中的一种或多种物质形成。即本申请实施例提供的近红外窄带滤光片在形成具有高折射率层的膜系时，该高折射率层可选用氢化硅、Si xGe 1-x和Si xGe 1-x：H中的一种或多种物质混合镀制；当形成具有高折射率锗基层的膜系时，该高折射率锗基层由氢化锗、Si xGe 1-x和Si xGe 1-x：H中的一种或多种物质混合镀制。
在上述实施例的基础上，本申请实施例提供的近红外窄带滤光片中的所述低折射率层由SiO 2、Si 3N 4、SiO xN y、Ta 2O 5、Nb 2O 5、TiO 2、Al 2O 3、SiCN和SiC中的一种或多种物质形成。即本申请实施例提供的近红外窄带滤光片用于形成两个膜系的低折射率层可选用SiO 2、Si 3N 4、SiO xN y、Ta 2O 5、Nb 2O 5、TiO 2、Al 2O 3、SiCN和SiC中的一种或多种物质混合镀制。
在上述实施例的基础上，本申请实施例提供的近红外窄带滤光片还包括：在780～3000nm的波长范围内的折射率介于1.7～4.5的多个匹配层。即本申请实施例提供的近红外窄带滤光片还包括多个匹配层。
在上述实施例的基础上，本申请实施例提供的近红外窄带滤光片中的所述中折射率层由a-SiO x:H y、a-SiN x:H y、a-GeO x:H y、a-GeN x:H y、a-Si zGe 1-zO x:H y和a-Si zGe 1-zN x:H y中的一种或多种物质形成。即本申请实施例提供的近红外窄带滤光片中的所述中折射率层可选用a-SiO x:H y、a-SiN x:H y、a-GeO x:H y、a-GeN x:H y、a-Si zGe 1-zO x:H y和a-Si zGe 1-zN x:H y中的一种或多种物质混合镀制。
本申请实施例提供的近红外窄带滤光片在两侧镀制完成窄带通膜系和宽带通膜系或长带通膜系后，形成近红外窄带滤光片中的反射色在CIE xyz坐标系下可满足：x<0.509；y<0.363；以及z<30％。即本申请实施例提供的近红外窄带滤光片在两侧镀制完成窄带通膜系和宽带通膜系后，形成近红外窄带滤光片中的反射色在CIE xyz坐标系下满足：反射条件x<0.509；y<0.363；以及z<30％，则得到的近红外窄带滤光片能更好的满足手机全面屏中的屏下器件及车载器件中的近红外窄带滤光片多样化反射色、低反射能量强度、低反射色亮度的应用 需求。
在上述实施例的基础上，本申请实施例提供的所述近红外窄带滤光片，当入射光线以0度至30度之间入射至所述近红外窄带滤光片中时，所述窄带通膜系的通带的中心波长漂移量在16nm以下，即通带波段的中心波长漂移幅度小于16nm。即本申请实施例提供的所述近红外窄带滤光片在使用的时候，入射光线以0度至30度之间入射至所述近红外窄带滤光片中时，所述窄带通膜系的通带的中心波长漂移量在16nm以下，以获得镀制性能更加优良的近红外窄带滤光片。
在上述实施例的基础上，本申请实施例提供的所述近红外窄带滤光片的p光和s光的中心波长漂移在5nm以下。即本申请实施例提供的所述近红外窄带滤光片在使用的时候，p光和s光的中心波长漂移在5nm以下，以获得镀制性能更加优良的近红外窄带滤光片。
在上述实施例的基础上，本申请实施例提供的近红外窄带滤光片中的所述窄带通膜系和所述宽带通膜系的总厚度小于15μm。即本申请实施例提供的近红外窄带滤光片在两侧膜系镀制完成后，窄带通膜系和宽带通膜系的总厚度小于15μm，使得近红外窄带滤光片厚度较薄，便于使用。
本申请实施例还提供一种近红外窄带滤光片的制作方法，图2为本申请实施例提供的近红外窄带滤光片的制作方法流程图，如图2所示，该方法包括：
步骤21)在基板的第一侧依次交替镀制低折射率层以及高折射率层，以形成窄带通膜系，以及
步骤22)在所述基板的与所述第一侧相对的第二侧镀制宽带通膜系或长波通膜系，其中：所述宽带通膜系或所述长波通膜系的通带宽于所述窄带通膜系的通带；所述窄带通膜系包括在780～3000nm的波长范围内折射率大于3的高折射率层以及折射率小于3的低折射率层；以及所述近红外窄带滤光片的反射色在CIE xyz坐标系下满足：x<0.509；y<0.363；以及z<50％。
本申请实施例提供的近红外窄带滤光片的制作方法，通过在基板两侧分别镀制具有在780～3000nm折射率大于3的高折射率层以及折 射率小于3的低折射率层的窄带通膜系和宽带通膜系，获得反射色在CIE xyz坐标系下满足暗反射色条件z<50％且x<0.509和y<0.363的近红外窄带滤光片，以满足手机全面屏中的屏下器件及车载器件对近红外窄带滤光片多样化反射色、低反射能量强度、低反射色亮度的应用需要。
在上述实施例的基础上，本申请实施例提供的近红外窄带滤光片的制作方法还包括：通过溅射镀膜或蒸发镀膜的镀膜方法，在所述基板的两侧镀制所述高折射率层以及所述低折射率层。即本申请实施例提供的近红外窄带滤光片的制作方法在进行基板镀膜时，可以采用溅射镀膜或蒸发镀膜的镀膜工艺，在基板两侧分别镀制高折射率层或所述低折射率层，并形成相应的膜系，方法简单、操作方便，镀制精确。
在上述实施例的基础上，本申请实施例提供的近红外窄带滤光片的制作方法还包括：在所述窄带通膜系一侧镀制中折射率层，其中：所述中折射率层的折射率介于所述高折射率层的折射率与所述低折射率层的折射率之间。即本申请实施例提供的近红外窄带滤光片的制作方法在对基板进行镀膜，可以采用上述2层膜料镀制(高折射率层与低折射率层)，获得窄带通膜系和宽带通膜系或长波通膜系，也可以采用3层膜料，即高折射率层、中折射率层和低折射率层形成宽带通膜系或长波通膜系，操作灵活，镀制精确。
在上述实施例的基础上，本申请实施例提供的近红外窄带滤光片的制作方法还包括：基于硅、锗、氩气、氢气以及氧气，通过辉光放电得到的带电离子束轰击靶材以镀制所述中折射率层，所述中折射率层包括a-SiO x:H y、a-SiN x:H y、a-GeO x:H y、a-GeN x:H y、a-Si zGe 1-zO x:H y和a-Si zGe 1-zN x:H y中的一种或多种物质。即在辉光放电前，先将沉积室温抽真空到小于5*10^-5torr，在辉光放电沉积过程中，通入流量介于10sccm～300sccm的氩气用做反应气体，并依次通入流量小于80sccm的氢气、流量小于60sccm的氧气；在氢化反应过程中，让氧原子掺杂入非晶硅薄膜中，使氧原子在非晶硅中与Si形成新键，形成氢化非晶氧化硅(a-SiO x:H y)、氢化非晶氧化锗(a-GeO x:H y)和氢化非晶氧化硅锗(a-Si zGe 1-zO x:H y)，从而获得镀制中折射率层的相应物质。
为了更好的说明本申请中近红外窄带滤光片膜系的镀制结构，现提供以下实施例做进一步说明。
实施例一
本申请实施例提供的近红外窄带滤光片，其第二侧可镀有宽带通膜系或长带通膜系。表1a为宽带通膜系或长带通膜系膜层厚度表，该表体现了本申请近红外窄带滤光片宽带通膜系或长带通膜系的膜层结构，通过两种膜料交替镀制不同厚度的膜层，以形成所需要的膜系结构。在表1a所示的结构中，SiO 2是低折射率介电质材料，Si:H是高折射率硅基材料。
当在近红外窄带滤光片的第一侧镀有亮反射色窄带通膜系时，可参照以下表1b所示的结构。表1b为亮反射色窄带通膜系膜层厚度表，该表体现了本申请近红外窄带滤光片窄带通膜系的亮反射色窄带膜系的膜层结构，也是通过两种膜料交替镀制不同厚度的膜层，来形成相应的膜系结构，其中，高折射率硅基材料为a-Si:H，低折射率介电质材料为SiO 2。按1931 CIE xyz系统表征，基于表1a和表1b制备的双面镀膜的滤光片在入射光0°和30°的入射下，分别表征为(0.351，0.324，53.03％)和(0.356，0.315，49.09％)。其中x、y表示颜色的色度坐标，z表示颜色的亮度。图3a为本申请实施例一提供的镀有亮反射色窄带通膜系的滤光片反射率和波长关系图。
当在近红外窄带滤光片的第一侧镀有暗反射色窄带通膜系时，可参照以下表1c所示的结构。表1c为暗反射色窄带通膜系膜层厚度表，该表体现了本申请近红外窄带滤光片窄带通膜系的暗反射色窄带膜系的膜层结构，该膜系膜层通过三种膜料来镀制不同厚度的膜层，来形成相应的膜系结构。在表1c中，三种膜料为：高折射率材料a-Si:H；低折射率材料SiO 2；以及中折射率材料a-SiO x:H y。按1931 CIE xyz系统表征，基于表1a和表1c制备的双面镀膜的滤光片在入射光0°和30°的入射下，分别表征为(0.192，0.077，3.8％)和(0.216，0.08，3.9％)。其中x、y表示颜色的色度坐标，z表示颜色的亮度。图3b为本申请实施例一提供的镀有暗反射色窄带通膜系的滤光片的反射率和 波长关系图。
表1a：宽带通膜系或长带通膜系膜层厚度，单位：nm
层号 1 2 3 4 5 6
膜料 SiO 2 Si:H SiO 2 Si:H SiO 2 Si:H
膜厚 170.6 27.72 82.96 32.7 132.4 40.69
层号 6 7 8 9 10 11
膜料 SiO 2 Si:H SiO 2 Si:H SiO 2 Si:H
膜厚 101.55 31.19 119.83 37.6 122.7 34.77
层号 12 13 14 15 16 17
膜料 SiO 2 Si:H SiO 2 Si:H SiO 2 Si:H
膜厚 116.51 34.77 118.47 30.3 127.7 42.24
层号 18 19 20 21 22 23
膜料 SiO 2 Si:H SiO 2 Si:H SiO 2 Si:H
膜厚 123.15 26.47 105.93 42.1 126.9 35.13
层号 24 25 26 - - -
膜料 SiO 2 Si:H SiO 2 - - -
膜厚 74.04 22.29 94.59 - - -
表1b：亮反射色窄带通膜层厚度，单位：nm
层号 1 2 3 4 5
膜料 a-Si:H SiO 2 a-Si:H SiO 2 a-Si:H
膜厚 148.86 385.37 60.57 498.56 133.63
层号 6 7 8 9 10
膜料 SiO 2 a-Si:H SiO 2 a-Si:H SiO 2
膜厚 148.47 58.19 146.02 389.75 168.05
层号 11 12 13 14 15
膜料 a-Si:H SiO 2 a-Si:H SiO 2 a-Si:H
膜厚 77.19 107.45 399.35 116.46 83.12
层号 16 17 18 19 20
膜料 SiO 2 a-Si:H SiO 2 a-Si:H SiO 2
膜厚 125.35 404.06 54.76 98.94 130.29
层号 21 22 23 24  
膜料 a-Si:H SiO 2 a-Si:H SiO 2  
膜厚 501.89 230.75 100.12 459.47  
表1c：暗反射色窄带通膜层厚度，单位：nm
层号 1 2 3 4 5
膜料 a-Si:H SiO 2 a-Si:H SiO 2 a-SiO x:H y
膜厚 158.5 372.09 66.79 397.77 142.05
层号 6 7 8 9 10
膜料 SiO 2 a-Si:H SiO 2 a-SiO x:H y SiO 2
膜厚 427.94 4.81 226.16 387.64 179.16
层号 11 12 13 14 15
膜料 a-Si:H SiO 2 a-Si:H SiO 2 a-Si:H
膜厚 78.18 52.78 408.53 143.7 79.69
层号 16 17 18 19 20
膜料 SiO 2 a-Si:H SiO 2 a-Si:H SiO 2
膜厚 93.16 415.52 54.15 77.91 191.01
层号 21 22 23 24 25
膜料 a-Si:H SiO 2 a-Si:H a-SiO x:H y SiO 2
膜厚 512.57 211.45 144.32 69.51 548.39
实施例二
本申请实施例提供的近红外窄带滤光片，其第二侧可镀有宽带通膜系或长带通膜系。表2a为宽带通膜系或长带通膜系膜层厚度表，该表体现了本申请近红外窄带滤光片宽带通膜系或长带通膜系的膜层结构，通过两种膜料交替镀制不同厚度的膜层，以形成所需要的膜系结构。在表2a所示的结构中，SiO 2是低折射率介电质材料，TiO 2是高折射率材料。
当在近红外窄带滤光片的第一侧镀有亮反射色窄带通膜系时，可参照以下表2b所示的结构。表2b为亮反射色窄带通膜系膜层厚度表，该表体现了本申请近红外窄带滤光片窄带通膜系的亮反射色窄带膜系的膜层结构，也是通过两种膜料交替镀制不同厚度的膜层，来形成相应的膜系结构，其中，高折射率硅基材料为a-Si:H，低折射率介电质材料为SiO 2。按1931 CIE xyz系统表征，基于表2a和表2b制备的双面镀膜的滤光片在入射光0°和30°的入射下，分别表征为(0.351，0.324，53.03％)和(0.356，0.315，49.09％)。其中x、y表示颜色的色度坐标，z表示颜色的亮度。图4a为本申请实施例二提供的镀有亮反射色窄带通膜系的滤光片反射率和波长关系图。
当在近红外窄带滤光片的第一侧镀有暗反射色窄带通膜系时，可参照以下表2c所示的结构。表2c为暗反射色窄带通膜系膜层厚度表，该表体现了本申请近红外窄带滤光片窄带通膜系的暗反射色窄带膜系的膜层结构，也是通过两种膜料交替镀制不同厚度的膜层，来形成相应的膜系结构，其中，高折射率硅基材料a-Si:H，低折射率介电质材 料SiO 2。按1931 CIE xyz系统表征，基于表2a和表2c制备的双面镀膜的滤光片在入射光0°和30°的入射下，分别表征为(0.301，0.319，35.22％)和(0.276，0.309，29.66％)。其中x、y表示颜色的色度坐标，z表示颜色的亮度。图4b为本申请实施例二提供的镀有暗反射色窄带通膜系的滤光片的反射率和波长关系图。
表2a：宽带通膜系或长带通膜系膜层厚度，单位：nm
层号 1 2 3 4 5 6
膜料 SiO 2 TiO 2 SiO 2 TiO 2 SiO 2 TiO 2
膜厚 134.4 72.6 90.3 67.45 120.98 77.91
层号 7 8 9 10 11 12
膜料 SiO 2 TiO 2 SiO 2 TiO 2 SiO 2 TiO 2
膜厚 136 83.4 97.5 70.9 270.45 75.64
层号 13 14 15 16 17 18
膜料 SiO 2 TiO 2 SiO 2 TiO 2 SiO 2 TiO 2
膜厚 111.7 67.6 101.7 197.77 116.51 74.86
层号 19 20 21 22 23 24
膜料 SiO 2 TiO 2 SiO 2 TiO 2 SiO 2 TiO 2
膜厚 118.7 75.8 120.1 76.6 103.28 42.14
层号 25 2 27 28 29 30
膜料 SiO 2 TiO 2 SiO 2 TiO 2 SiO 2 TiO 2
膜厚 133.6 83.1 131.4 83.54 133.68 85.88
层号 31 32 33 34 35 36
膜料 SiO 2 TiO 2 SiO 2 TiO 2 SiO 2 TiO 2
膜厚 133.1 84.1 135.3 84.91 135.75 84.61
层号 37 38 39 40 41 42
膜料 SiO 2 TiO 2 SiO 2 TiO 2 SiO 2 TiO 2
膜厚 87.1 75.6 124.5 80.29 129.71 82.58
层号 43 44 45 46 47 -
膜料 SiO 2 TiO 2 SiO 2 TiO 2 SiO 2 -
膜厚 136.4 87.5 130.1 77.82 103.24 -
表2b：亮反射色窄带通膜层厚度，单位：nm
层号 1 2 3 4 5
膜料 a-Si:H SiO 2 a-Si:H SiO 2 a-Si:H
膜厚 148.86 385.37 60.57 498.56 133.63
层号 6 7 8 9 10
膜料 SiO 2 a-Si:H SiO 2 a-Si:H SiO 2
膜厚 148.47 58.19 146.02 389.75 168.05
层号 11 12 13 14 15
膜料 a-Si:H SiO 2 a-Si:H SiO 2 a-Si:H
膜厚 77.19 107.45 399.35 116.46 83.12
层号 16 17 18 19 20
膜料 SiO 2 a-Si:H SiO 2 a-Si:H SiO 2
膜厚 125.35 404.06 54.76 98.94 130.29
层号 21 22 23 24  
膜料 a-Si:H SiO 2 a-Si:H SiO 2  
膜厚 501.89 230.75 100.12 459.47  
表2c：暗反射色窄带通膜层厚度，单位：nm
层号 1 2 3 4 5
膜料 a-Si:H SiO 2 a-Si:H SiO 2 a-Si:H
膜厚 149.59 386.15 55.34 523.36 133.76
层号 6 7 8 9 10
膜料 SiO 2 a-Si:H SiO 2 a-Si:H SiO 2
膜厚 114.26 71.4 170.76 395.02 104.98
层号 11 12 13 14 15
膜料 a-Si:H SiO 2 a-Si:H SiO 2 a-Si:H
膜厚 68.05 166.6 397.26 100.06 70.54
层号 16 17 18 19 20
膜料 SiO 2 a-Si:H SiO 2 a-Si:H SiO 2
膜厚 148.01 413.09 47.19 73.44 170.98
层号 21 22 23 24 25
膜料 a-Si:H SiO 2 a-Si:H SiO 2 -
膜厚 514.17 197.5 127.25 475.28 -
实施例三
本申请实施例提供的近红外窄带滤光片，其第二侧可镀有宽带通膜系或长带通膜系。表3a为宽带通膜系或长带通膜系膜层厚度表，该表体现了本申请近红外窄带滤光片宽带通膜系或长带通膜系的膜层结构，通过两种膜料交替镀制不同厚度的膜层，以形成所需要的膜系结构。在表1a所示的结构中，SiO 2是低折射率介电质材料，Si:H是高折射率硅基材料。
当在近红外窄带滤光片的第一侧镀有亮反射色窄带通膜系时，可参照以下表3b所示的结构。表3b为亮反射色窄带通膜系膜层厚度表，该表体现了本申请近红外窄带滤光片窄带通膜系的亮反射色窄带膜系的膜层结构，也是通过两种膜料交替镀制不同厚度的膜层，来形成相 应的膜系结构，其中，高折射率硅基材料为a-Si:H，低折射率介电质材料为SiO 2。按1931 CIE xyz系统表征，基于表3a和表3b制备的双面镀膜的滤光片在入射光0°和30°的入射下，分别表征为(0.366，0.292，49.80％)和(0.372，0.288，49.47％)。其中x、y表示颜色的色度坐标，z表示颜色的亮度。图5a为本申请实施例三提供的镀有亮反射色窄带通膜系的滤光片反射率和波长关系图。
当在近红外窄带滤光片的第一侧镀有暗反射色窄带通膜系时，可参照以下表3c所示的结构。表3c为暗反射色窄带通膜系膜层厚度表，该表体现了本申请近红外窄带滤光片窄带通膜系的暗反射色窄带膜系的膜层结构，该膜系膜层通过两种膜料来镀制不同厚度的膜层，来形成相应的膜系结构，其中，两种膜料为高折射率锗基材料Ge:H，低折射率介电质材料SiO 2。按1931 CIE xyz系统表征，基于表3a和表3c制备的双面镀膜的滤光片在入射光0°和30°的入射下，分别表征为(0.339，0.226，26.65％)和(0.361，0.246，28.07％)。其中x、y表示颜色的色度坐标，z表示颜色的亮度。图5b为本申请实施例三提供的镀有暗反射色窄带通膜系的滤光片的反射率和波长关系图。
表3a：宽带通膜系或长带通膜系膜层厚度，单位：nm
层号 1 2 3 4 5 6
膜料 SiO 2 Si:H SiO 2 Si:H SiO 2 Si:H
膜厚 32.42 27.09 92.93 37.22 83.78 75.25
层号 7 8 9 10 11 12
膜料 SiO 2 Si:H SiO 2 Si:H SiO 2 Si:H
膜厚 85.01 45.84 60 55.06 125.72 76.15
层号 13 14 15 16 17 18
膜料 SiO 2 Si:H SiO 2 Si:H SiO 2 Si:H
膜厚 60.96 45.69 63.42 65.25 117.06 72.66
层号 19 20 21 22 23 24
膜料 SiO 2 Si:H SiO 2 Si:H SiO 2 Si:H
膜厚 61.09 45.85 61.81 71.56 107.26 71.04
层号 25 26 27 28 29 30
膜料 SiO 2 Si:H SiO 2 Si:H SiO 2 Si:H
膜厚 61.87 47.55 52.23 73.93 131.17 69.77
层号 31 32 33 34 35 -
膜料 SiO 2 Si:H SiO 2 Si:H SiO 2 -
膜厚 50.78 37.72 89.25 89.18 93.91 -
表3b：亮反射色窄带通膜层厚度，单位：nm
层号 1 2 3 4 5
膜料 SiO 2 a-Si:H SiO 2 a-Si:H SiO 2
膜厚 271.34 103.33 313.14 52.95 423.24
层号 6 7 8 9 10
膜料 a-Si:H SiO 2 a-Si:H SiO 2 a-Si:H
膜厚 161.06 359.67 121.13 325.95 229.85
层号 11 12 13 14 15
膜料 SiO 2 a-Si:H SiO 2 a-Si:H SiO 2
膜厚 67.6 120.61 230.7 71.12 153.94
层号 16 17 18 19 20
膜料 a-Si:H SiO 2 a-Si:H SiO 2 a-Si:H
膜厚 269.59 51.55 106 116.26 62.54
层号 21 22 23 24 25
膜料 SiO 2 a-Si:H SiO 2 a-Si:H SiO 2
膜厚 161.77 261.54 131.1 99.22 74.22
层号 26 27 28 29 30
膜料 a-Si:H SiO 2 a-Si:H SiO 2 a-Si:H
膜厚 104.2 108.34 259.53 220.66 30.75
层号 31 32 33 34 35
膜料 SiO 2 a-Si:H SiO 2 a-Si:H SiO 2
膜厚 117.28 7.85 146.55 165.16 72.64
层号 36 37 38 39 40
膜料 a-Si:H SiO 2 a-Si:H SiO 2 a-Si:H
膜厚 32.5 248 131.47 319.05 129.39
表3c：暗反射色窄带通膜层厚度，单位：nm
层号 1 2 3 4 5
膜料 Ge:H SiO 2 Ge:H SiO 2 Ge:H
膜厚 94.5 66.27 146.33 112.37 84.16
层号 6 7 8 9 10
膜料 SiO 2 Ge:H SiO 2 Ge:H SiO 2
膜厚 126.13 105.98 20.95 282.78 114.81
层号 11 12 13 14 15
膜料 Ge:H SiO 2 Ge:H SiO 2 Ge:H
膜厚 79.45 137.63 404.19 53.8 226.65
层号 16 17 18 - -
膜料 SiO 2 Ge:H SiO 2 - -
膜厚 126.6 524.32 274.33 - -
实施例四
本申请实施例提供的近红外窄带滤光片，其第二侧可镀有宽带通膜系或长带通膜系。表4a为宽带通膜系或长带通膜系膜层厚度表，该表体现了本申请近红外窄带滤光片宽带通膜系或长带通膜系的膜层结构，通过两种膜料交替镀制不同厚度的膜层，以形成所需要的膜系结构。在表4a所示的结构中，SiO 2是低折射率材料，Si:H是高折射率材料。
当在近红外窄带滤光片的第一侧镀有亮反射色窄带通膜系时，可参照以下表4b所示的结构。表4b为亮反射色窄带通膜系膜层厚度表，该表体现了本申请近红外窄带滤光片窄带通膜系的亮反射色窄带膜系的膜层结构，也是通过两种膜料交替镀制不同厚度的膜层，来形成相应的膜系结构，其中，高折射率硅基材料为a-Si:H，低折射率介电质材料为SiO 2。按1931 CIE xyz系统表征，基于表4a和表4b制备的双面镀膜的滤光片在入射光0°和30°的入射下，分别表征为(0.366，0.292，49.80％)和(0.372，0.288，49.47％)。其中x、y表示颜色的色度坐标，z表示颜色的亮度。图6a为本申请实施例四提供的镀有亮反射色窄带通膜系的滤光片反射率和波长关系图。
当在近红外窄带滤光片的第一侧镀有暗反射色窄带通膜系时，可参照以下表4c所示的结构。表4c为暗反射色窄带通膜系膜层厚度表，该表体现了本申请近红外窄带滤光片窄带通膜系的亮反射色窄带膜系的膜层结构，也是通过两种膜料交替镀制不同厚度的膜层，来形成相应的膜系结构。其中，两种膜料分别为高折射率材料Si xGe 1-x:H，低折射率介电质材料SiO 2。按1931 CIE xyz系统表征，基于表4a和表4c制备的双面镀膜的滤光片在入射光0°和30°的入射下，分别表征为(0.222，0.179，12.33％)和(0.232，0.183，11.97％)。其中x、y表示颜色的色度坐标，z表示颜色的亮度。图6b为本申请实施例四提供的镀有暗反射色窄带通膜系的滤光片的反射率和波长关系图。
表4a：宽带通膜系或长带通膜系膜层厚度，单位：nm
层号 1 2 3 4 5 6
膜料 SiO 2 Si:H SiO 2 Si:H SiO 2 Si:H
膜厚 170.6 27.72 82.96 32.7 132.4 40.69
层号 6 7 8 9 10 11
膜料 SiO 2 Si:H SiO 2 Si:H SiO 2 Si:H
膜厚 101.55 31.19 119.83 37.6 122.7 34.77
层号 12 13 14 15 16 17
膜料 SiO 2 Si:H SiO 2 Si:H SiO 2 Si:H
膜厚 116.51 34.77 118.47 30.3 127.7 42.24
层号 18 19 20 21 22 23
膜料 SiO 2 Si:H SiO 2 Si:H SiO 2 Si:H
膜厚 123.15 26.47 105.93 42.1 126.9 35.13
层号 24 25 26 - - -
膜料 SiO 2 Si:H SiO 2 - - -
膜厚 74.04 22.29 94.59 - - -
表4b：亮反射色窄带通膜层厚度，单位：nm
层号 1 2 3 4 5
膜料 SiO 2 a-Si:H SiO 2 a-Si:H SiO 2
膜厚 271.34 103.33 313.14 52.95 423.24
层号 6 7 8 9 10
膜料 a-Si:H SiO 2 a-Si:H SiO 2 a-Si:H
膜厚 161.06 359.67 121.13 325.95 229.85
层号 11 12 13 14 15
膜料 SiO 2 a-Si:H SiO 2 a-Si:H SiO 2
膜厚 67.6 120.61 230.7 71.12 153.94
层号 16 17 18 19 20
膜料 a-Si:H SiO 2 a-Si:H SiO 2 a-Si:H
膜厚 269.59 51.55 106 116.26 62.54
层号 21 22 23 24 25
膜料 SiO 2 a-Si:H SiO 2 a-Si:H SiO 2
膜厚 161.77 261.54 131.1 99.22 74.22
层号 26 27 28 29 30
膜料 a-Si:H SiO 2 a-Si:H SiO 2 a-Si:H
膜厚 104.2 108.34 259.53 220.66 30.75
层号 31 32 33 34 35
膜料 SiO 2 a-Si:H SiO 2 a-Si:H SiO 2
膜厚 117.28 7.85 146.55 165.16 72.64
层号 36 37 38 39 40
膜料 a-Si:H SiO 2 a-Si:H SiO 2 a-Si:H
膜厚 32.5 248 131.47 319.05 129.39
表4c：暗反射色窄带通膜层厚度，单位：nm
层号 1 2 3 4 5
膜料 SiO 2 Si xGe 1-x:H SiO 2 Si xGe 1-x:H SiO 2
膜厚 120.77 155.9 50.95 95.41 21.38
层号 6 7 8 9 10
膜料 Si xGe 1-x:H SiO2 Si xGe 1-x:H SiO 2 Si xGe 1-x:H
膜厚 26.69 209.01 107.21 211.07 120.06
层号 11 12 13 14 15
膜料 SiO 2 Si xGe 1-x:H SiO 2 Si xGe 1-x:H SiO 2
膜厚 33.7 78.37 158.44 150.94 45.52
层号 16 17 18    
膜料 Si xGe 1-x:H SiO 2 Si xGe 1-x:H SiO 2 Si xGe 1-x:H
膜厚 79.6 149.8 65.1 155.1 135.2
层号 21 22 23 24 25
膜料 SiO 2 Si xGe 1-x:H SiO 2 Si xGe 1-x:H SiO 2
膜厚 152.95 68.3 61.26 64.19 170.69
层号 26 27 28 29 -
膜料 Si xGe 1-x:H SiO 2 Si xGe 1-x:H SiO 2 -
膜厚 123.87 195.8 205.01 98.3 -
本申请实施例还提供一种光学系统，该光学系统包括红外图像传感器和前述的滤光片5，滤光片5设置于红外图像传感器的感光侧。
请参照图7，图7为本申请实施例提供的光学系统结构图，如图7所示，包括红外(Infrared Radiation，简称IR)光源2，第一镜头组件3，第二镜头组件4，滤光片5和三维传感器6。红外光源2发出的光经第一镜头组件3照射到待测物1的表面，待测物1表面反射的光经第二镜头组件4照射到滤光片5，环境光线被滤光片5截止，而红外线或者部分红光透过滤光片5照射到三维传感器6的感光侧，以形成可供处理的图像数据。滤光片5对应不同方向的倾斜光线具有较低的中心波长偏移量，透过的红外线信噪比高，继而形成的图像质量好。
以上描述仅为本申请的较佳实施方式以及对所运用技术原理的说明。本领域技术人员应当理解，本申请中所涉及的保护范围，并不限于上述技术特征的特定组合而成的技术方案，同时也应涵盖在不脱离所述技术构思的情况下，由上述技术特征或其等同特征进行任意组合而形成的其它技术方案。例如上述特征与本申请中公开的(但不限于)具有类似功能的技术特征进行互相替换而形成的技术方案。

Claims (14)

  1. 一种近红外窄带滤光片，其特征在于，所述近红外窄带滤光片包括：
    基板；
    窄带通膜系，所述窄带通膜系设置在所述基板的第一侧；以及
    宽带通膜系或长波通膜系，其中，所述宽带通膜系设置在所述基板的与所述第一侧相对的第二侧，所述宽带通膜系的通带宽于所述窄带通膜系的通带，所述长波通膜系设置在所述基板的与所述第一侧相对的第二侧，所述长波通膜系的通带宽于窄带通膜系的通带，
    其中，所述窄带通膜系包括在780～3000nm的波长范围内折射率大于3的高折射率层以及折射率小于3的低折射率层，以及
    其中，所述近红外窄带滤光片的反射色在CIE xyz坐标系下满足：
    x<0.509；
    y<0.363；以及
    z<50％。
  2. 根据权利要求1所述的近红外窄带滤光片，其特征在于，所述近红外窄带滤光片的反射色在CIE xyz坐标系下满足：
    x<0.509；
    y<0.363；以及
    z<30％。
  3. 根据权利要求1所述的近红外窄带滤光片，其特征在于，所述窄带通膜系还包括中折射率层，其中：
    所述中折射率层的折射率介于所述高折射率层的折射率与所述低折射率层的折射率之间。
  4. 根据权利要求1所述的近红外窄带滤光片，其特征在于，所述高折射率层由氢化硅、Si xGe 1-x和Si xGe 1-x：H中的一种或多种物质形 成，或所述高折射率锗基层由氢化锗、Si xGe 1-x和Si xGe 1-x：H中的一种或多种物质形成。
  5. 根据权利要求1所述的近红外窄带滤光片，其特征在于，所述低折射率层由SiO 2、Si 3N 4、SiO xN y、Ta 2O 5、Nb 2O 5、TiO 2、Al 2O 3、SiCN和SiC中的一种或多种物质形成。
  6. 根据权利要求1所述的近红外窄带滤光片，其特征在于，还包括：
    在780～3000nm的波长范围内的折射率介于1.7～4.5的多个中折射率层。
  7. 根据权利要求3所述的近红外窄带滤光片，其特征在于，所述中折射率层由a-SiO x:H y、a-SiN x:H y、a-GeO x:H y、a-GeN x:H y、a-Si zGe 1-zO x:H y和a-Si zGe 1-zN x:H y中的一种或多种物质形成。
  8. 根据权利要求1所述的近红外窄带滤光片，其特征在于，当入射光线以0度至30度之间入射至所述近红外窄带滤光片中时，所述窄带通膜系的通带的中心波长漂移量在16nm以下。
  9. 根据权利要求1所述的近红外窄带滤光片，其特征在于，所述近红外窄带滤光片的p光和s光的中心波长漂移在5nm以下。
  10. 根据权利要求1所述的近红外窄带滤光片，其特征在于，所述窄带通膜系和所述宽带通膜系或所述长波通膜系的总厚度小于15μm。
  11. 一种近红外窄带滤光片的制作方法，其特征在于，包括：
    在基板的第一侧依次交替镀制低折射率层以及高折射率层，以形成窄带通膜系，以及
    在所述基板的与所述第一侧相对的第二侧镀制宽带通膜系或长波通膜系，其中：
    所述宽带通膜系或所述长波通膜系的通带宽于所述窄带通膜系的通带；
    所述窄带通膜系包括在780～3000nm的波长范围内折射率大于3的高折射率层以及折射率小于3的低折射率层；以及
    所述近红外窄带滤光片的反射色在CIE xyz坐标系下满足：
    x<0.509；
    y<0.363；以及
    z<50％。
  12. 根据权利要求11所述的制作方法，其特征在于，该制作方法是通过溅射镀膜或蒸发镀膜的镀膜方法。
  13. 根据权利要求11所述的制作方法，其特征在于，形成窄带通膜系还包括镀制中折射率层，所述中折射率层的折射率介于所述高折射率层的折射率与所述低折射率层的折射率之间。
  14. 根据权利要求13所述的制作方法，其特征在于，还包括：
    基于硅、锗、氩气、氢气以及氧气，通过辉光放电得到的带电离子束轰击靶材以镀制所述中折射率层，所述中折射率层包括a-SiO x:H y、a-SiN x:H y、a-GeO x:H y、a-GeN x:H y、a-Si zGe 1-zO x:H y和a-Si zGe 1-zN x:H y中的一种或多种物质。
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