WO2020244221A1 - 近红外带通滤光片及光学传感系统 - Google Patents

近红外带通滤光片及光学传感系统 Download PDF

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Publication number
WO2020244221A1
WO2020244221A1 PCT/CN2019/130575 CN2019130575W WO2020244221A1 WO 2020244221 A1 WO2020244221 A1 WO 2020244221A1 CN 2019130575 W CN2019130575 W CN 2019130575W WO 2020244221 A1 WO2020244221 A1 WO 2020244221A1
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Prior art keywords
refractive index
film layer
pass
film system
band
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Ceased
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PCT/CN2019/130575
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English (en)
French (fr)
Inventor
陈策
丁维红
陈惠广
方叶庆
肖念恭
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Xinyang Sunny Optics Co Ltd
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Xinyang Sunny Optics Co Ltd
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Priority to SG11202111605UA priority Critical patent/SG11202111605UA/en
Priority to KR1020217034651A priority patent/KR20220002320A/ko
Priority to EP19931791.8A priority patent/EP3982169A4/en
Priority to JP2021564100A priority patent/JP7299346B2/ja
Publication of WO2020244221A1 publication Critical patent/WO2020244221A1/zh
Priority to US17/516,997 priority patent/US20220120950A1/en
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/10—Glass or silica
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B1/00—Optical elements characterised by the material of which they are made; Optical coatings for optical elements
    • G02B1/02—Optical elements characterised by the material of which they are made; Optical coatings for optical elements made of crystals, e.g. rock-salt, semi-conductors
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B5/00—Optical elements other than lenses
    • G02B5/20—Filters
    • G02B5/208—Filters for use with infrared or ultraviolet radiation, e.g. for separating visible light from infrared and/or ultraviolet radiation
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B5/00—Optical elements other than lenses
    • G02B5/20—Filters
    • G02B5/28—Interference filters
    • G02B5/281—Interference filters designed for the infrared light
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B5/00—Optical elements other than lenses
    • G02B5/20—Filters
    • G02B5/28—Interference filters
    • G02B5/285—Interference filters comprising deposited thin solid films
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B5/00—Optical elements other than lenses
    • G02B5/20—Filters
    • G02B5/28—Interference filters
    • G02B5/285—Interference filters comprising deposited thin solid films
    • G02B5/288—Interference filters comprising deposited thin solid films comprising at least one thin film resonant cavity, e.g. in bandpass filters

Definitions

  • This application relates to the field of filters, and more specifically, to a near-infrared bandpass filter and an optical sensing system.
  • the infrared sensor system forms an image by receiving the infrared rays reflected by the target, and then obtains the target's information by processing the image. It is usually used in fields such as face recognition, gesture recognition, and smart home.
  • Infrared sensing system includes lens, filter, image sensor and other components
  • the performance of the infrared sensor system is affected by temperature called temperature stability.
  • equipment such as vehicle-mounted lidar, space detectors or optical communication equipment often work at extreme temperatures; the temperature of these equipment in actual use differs greatly from the temperature during manufacturing and debugging, and the temperature stability of the infrared sensing system on these equipment High standard.
  • the prior art usually improves the structure and material of the lens to ensure the imaging quality of the infrared sensor system; or pays attention to the temperature drift of the electrical performance of the image sensor to ensure the infrared sensor system The quality of the image data.
  • a filter whose optical characteristics are less affected by temperature changes such as a light-shielding filter that has less influence on temperature changes in the center wavelength shift of the pass band.
  • the change in the passband of the shading plate will also affect the imaging quality of the infrared sensor system, and the prior art usually only pays attention to the influence of the incident angle of light on the shift of the center wavelength of the passband. Therefore, it is desirable to provide a center wavelength shift of the passband. The shift is less affected by temperature changes.
  • this application provides a near-infrared bandpass filter and an optical sensing system.
  • the embodiments of the present application provide a near-infrared bandpass filter, comprising: a substrate, a main film system and an auxiliary film system, the main film system is located on the first side of the substrate, and the auxiliary film system is located on the first side of the substrate.
  • the main film system includes the high refractive index film layer and the first low refractive index film layer arranged according to the first preset stack structure;
  • the auxiliary film system includes the second preset The second low refractive index film layer and the third low refractive index film layer are arranged in a stacked structure, the refractive index of the second low refractive index film layer is different from that of the third low refractive index film layer, or the auxiliary film system includes The high refractive index film layer and the second low refractive index film layer arranged in the second preset stack structure; in the wavelength range of 780nm to 3000nm, the near-infrared bandpass filter has at least one passband, and the temperature changes from -150°C At 300°C, the shift of the center wavelength of at least one passband is less than 0.15nm/°C.
  • the shift of the center wavelength of the passband of the near-infrared bandpass filter is less than 0.09nm/°C.
  • the refractive index of the high refractive index film layer is greater than 3 corresponding to any wavelength in the wavelength range of 780 nm to 3000 nm.
  • the extinction coefficient of the high refractive index film layer is less than 0.01.
  • the refractive index of the high refractive index film layer is greater than 3.6, and the extinction coefficient is less than 0.005.
  • the thickness d f1 of the main film system satisfies: d f1 ⁇ 7 ⁇ m; the thickness d f2 of the auxiliary film system satisfies: d f2 ⁇ 8 ⁇ m.
  • the crystal structure of a part of the high refractive index film is crystalline, and the crystal structure of another part is amorphous; the crystal structure is between the volume of the crystalline part and the volume of the high refractive index film.
  • the ratio is within 10% to 20%.
  • the material of the high refractive index film layer includes silicon hydride, germanium hydride, silicon borohydride, germanium borohydride, nitrogen-doped silicon hydride, nitrogen-doped germanium hydride, phosphorus-doped silicon hydride, phosphorus-doped germanium hydride or A mixture of one or more of Si x Ge 1-x , where 0 ⁇ x ⁇ 1.
  • the material of the substrate includes glass.
  • the form of the first preset stack structure is: (L 1 -H) s -L 1 , or (HL 1 ) s ;
  • H represents a high refractive index film layer
  • L 1 represents the first low refractive index film layer
  • s represents the number of repetitions of the structure in the brackets, and s is an integer greater than or equal to 1.
  • the main film system further includes a fourth low refractive index film layer, and the refractive index of the first low refractive index film layer is not equal to the refractive index of the fourth low refractive index film layer.
  • the form of the first preset stack structure is: (L 1 -L 4 -L 1 -H) s -L 1 ; (L 1 -L 4 -L 1 -H ) s -L 4 ; H-(L 1 -L 4 -L 1 -H) s -L 1 ; or H-(L 1 -L 4 -L 1 -H) s -L 4 ; H stands for high refractive index Film layer, L 1 represents the first low-refractive index film layer, L 4 represents the fourth low-refractive index film layer, s represents the number of repetitions of the structure in parentheses, and s is an integer greater than or equal to 1.
  • the main film system is a narrow band pass film system
  • the auxiliary film system is a wide band pass film system or a long wave pass film system.
  • the narrow band pass film has at least one pass band.
  • the auxiliary film is a long-wave pass film; corresponding to the wavelength range of 350 nm to 3000 nm, the long-wave pass film has at least one pass band and one cut-off band, and the pass band of the long wave pass film covers the narrow band pass film. Passband.
  • the auxiliary film system is a broadband pass film system, and the pass band of the broadband pass film system covers the pass band of the narrow band pass film system; in the wavelength region less than the minimum wavelength of the pass band of the broadband pass film system, the broadband pass film The average cut-off of the system is greater than the cut-off of the narrow bandpass film system.
  • the coefficient of linear expansion of the substrate material is between 3*10 -6 /°C and 17*10 -6 /°C.
  • the main film system and the auxiliary film system are produced by sputtering reaction equipment or evaporation equipment.
  • the embodiments of the present application also provide an optical sensing system, including an image sensor and the aforementioned near-infrared band-pass filter, and the near-infrared band-pass filter is arranged on the photosensitive side of the image sensor.
  • the refractive index of the film layer of the auxiliary film system is less than or equal to the refractive index of the high refractive index film layer of the main film system , so that the equivalent refractive index of the auxiliary film system is not greater than the equivalent refractive index of the main film system, and the structure of the near-infrared band-pass filter is set as follows: the main film system includes the film layers arranged in the first stacked structure to match the substrate , The auxiliary film system includes film layers arranged in the second stack structure, so that the temperature drift of the passband center wavelength of the auxiliary film system is not greater than the temperature drift of the passband center wavelength of the main film system; and then the temperature drift is within the wavelength range of 780nm to 3000nm.
  • the temperature drift of the center wavelength of the pass band of the near-infrared band-pass filter is less than 0.15nm/°C, ensuring that the near-infrared wavelength range can penetrate The light of the near-infrared band-pass filter, at different temperatures, the difference between the light after penetration is small.
  • the optical sensing system provided with the near-infrared band-pass filter provided by the present application has less impact on the imaging quality when working in an environment with temperature changes.
  • Fig. 1 shows a schematic structural diagram of a near-infrared bandpass filter according to an embodiment of the present application
  • Figure 2 shows a schematic diagram of an optical sensing system in use according to an embodiment of the present application
  • FIG. 3 shows the light transmittance curve of the band-pass film system in Table 1 according to an embodiment of the present application
  • FIG. 4 shows the light transmittance curve of the band-pass film system in Table 2 according to an embodiment of the present application
  • FIG. 5 shows the light transmittance curve of the long wave pass film system in Table 3 according to an embodiment of the present application
  • Fig. 6 shows the light transmittance curve of the long-wave pass film system in Table 4 according to an embodiment of the present application
  • FIG. 7 shows the transmittance curves of the near-infrared band-pass filter corresponding to different angles of incident light according to an embodiment of the present application
  • Figure 8 shows the transmittance curves of the near-infrared bandpass filter corresponding to Figure 7 at different temperatures
  • FIG. 9 shows the transmittance curves of a near-infrared bandpass filter corresponding to incident light from different angles according to another embodiment of the present application.
  • FIG. 10 shows the transmittance curves of the near-infrared bandpass filter corresponding to FIG. 9 at different temperatures
  • Fig. 11 shows the transmittance curves of the near-infrared bandpass filter at different temperatures according to another embodiment of the present application
  • FIG. 12 shows the transmittance curves of the near-infrared bandpass filter corresponding to different angles of incident light according to another embodiment of the present application
  • FIG. 13 shows the transmittance curves of the near-infrared bandpass filter corresponding to FIG. 12 at different temperatures
  • FIG. 14 shows the transmittance curves of the near-infrared bandpass filter corresponding to different angles of incident light according to another embodiment of the present application
  • FIG. 15 shows the transmittance curves of the near-infrared band pass filter corresponding to FIG. 14 at different temperatures.
  • first, second, third, etc. are only used to distinguish one feature from another feature, and do not represent any restriction on the feature. Therefore, without departing from the teachings of the present application, the first low refractive index film layer discussed below may also be referred to as the second low refractive index film layer. vice versa.
  • the thickness of the film layer refers to the thickness in the direction away from the substrate.
  • Fig. 1 shows a schematic structural diagram of a near-infrared bandpass filter according to an embodiment of the present application.
  • the near-infrared bandpass filter 5 provided by the embodiment of the present application includes: a substrate 51, a main film system 52, and an auxiliary film system 53, the main film system 52 is located on the first side of the substrate 51, and the auxiliary film
  • the tie 53 is located on the second side of the substrate, and the first side and the second side are opposite.
  • the substrate 51 is a transparent substrate, and the material of the transparent substrate can optionally be crystal, borosilicate glass, etc., specifically, D263T, AF32, Eagle XG, H-ZPK5, H-ZPK7, etc.
  • the base 51 may be a transparent sheet
  • the up-down direction in FIG. 1 is the thickness direction of the transparent sheet
  • the upper side and the lower side of the transparent sheet are opposite.
  • the main film system 52 is disposed on the outside of the upper surface of the base 51
  • the auxiliary film system 53 is disposed on the outside of the lower surface of the base 51.
  • the main film system 52 includes a high refractive index film layer and a first low refractive index film layer arranged in a first preset stack structure.
  • the refractive index n 1 of the high refractive index film layer is greater than that of the first low refractive index film.
  • the refractive index of the layer n 21 is greater than that of the first low refractive index film.
  • the form of the first preset stack structure is: (L 1 -H) s -L 1 or (HL 1 ) s, etc., where H represents a high refractive index film layer, and L 1 Represents the first low refractive index film layer, s represents the number of repetitions of the structure in the brackets, and s is an integer greater than or equal to 1.
  • H represents a high refractive index film layer
  • s represents the number of repetitions of the structure in the brackets
  • s is an integer greater than or equal to 1.
  • the form of the first preset stack structure is: L 1 HL 1 HL 1 HL 1 HL 1 HL 1 .
  • the film layer aggregation density P 0 satisfies: 0.9 ⁇ P 0 ⁇ 1.6.
  • the auxiliary film system 53 includes a second low refractive index film layer and a third low refractive index film layer arranged in a second preset stack structure, or a high refractive index film layer and a second low refractive index film layer.
  • the refractive index of the second low refractive index layer is not equal to that of the third low refractive index film layer.
  • the refractive index, and the refractive index of the third low refractive index film layer is smaller than the refractive index of the high refractive index film layer of the main film system 52.
  • the second preset stack structure may refer to the first preset stack structure, where L 2 refers to the second low refractive index film layer, and L 3 refers to the third low refractive index film layer.
  • the second preset stack structure may be: (L 2 -L 3 ) z -L 2 or (L 2 -L 3 ) z , where z is an integer greater than or equal to 1.
  • the auxiliary film system 53 includes a second low refractive index layer arranged according to a second preset stack structure and The third low refractive index film layer, therefore, the near-infrared bandpass filter 5 disclosed in the present application may be an interference type filter.
  • the refractive index of the third low refractive index film layer is not greater than the refractive index of the high refractive index film layer, so that the characteristics of the main film system 52 have a greater impact on the characteristics of the near-infrared bandpass filter 5.
  • Each layer of the main film system 52 can be a film layer generated by sputtering reaction
  • each film layer of the auxiliary film system 53 can be a film layer generated by a sputtering reaction method or an evaporation method. This manufacturing method makes the base 51, the main The film system 52 and the auxiliary film system 53 are combined into one body.
  • the near-infrared bandpass filter 5 disclosed in the embodiments of the present application has at least one passband.
  • the near-infrared bandpass filter 5 has The drift of the center wavelength of the passband is less than 0.15nm/°C.
  • the shift amount of the center wavelength of the pass band is less than 0.12 nm/°C.
  • the shift of the center wavelength of the pass band is less than 0.09 nm/°C.
  • the shift of the center wavelength of the passband of the near-infrared bandpass filter is less than 0.09nm/°C.
  • the near-infrared bandpass filter The drift of the center wavelength of the passband of the optical sheet is less than 0.05nm/°C.
  • the wavelength range of 780 nm to 3000 nm is located in the near-infrared position, and a pass band is formed in this wavelength range, so that the light passing through the near-infrared band pass filter 5 includes at least a part of near-infrared light.
  • the shift of the center wavelength of the passband of the near-infrared bandpass filter 5 is less than 0.15nm/°C.
  • the near-infrared bandpass filter 5 disclosed in the present application can be applied at least in a temperature environment of about -150°C and a temperature environment of about 300°C.
  • the center wavelength of the passband has a drift of less than 0.15nm/°C in the wavelength range of 780nm to 3000nm.
  • the light passing through the near-infrared bandpass filter 5 disclosed in this application contains Stabilize the near-infrared light in the area. The signal carried by the near-infrared light in the stable area is stabilized.
  • the refractive index of the high refractive index film layer is greater than 3 corresponding to any wavelength in the wavelength range of 780 nm to 3000 nm. In an embodiment, the refractive index of the high refractive index film layer is greater than 3.2 corresponding to any wavelength in the range of 800 nm to 1100 nm. In an embodiment, the refractive index of the high refractive index film layer is greater than 3.5 corresponding to any wavelength in the range of 800 nm to 900 nm.
  • the high refractive index film has a higher refractive index, which can improve the temperature stability of the signal carried by infrared light in this wavelength range, and when the refractive index of the high refractive index film is greater than 3.5
  • the influence of the structure of the main film system 52 on the optical characteristics of the near-infrared bandpass filter 5 disclosed in this application can be further improved, so that the main film system 52 adopts a simpler form of the first preset stack structure to cooperate with the substrate 51, You can achieve the desired effect.
  • the extinction coefficient of the high refractive index film layer is less than 0.01.
  • the refractive index of the high refractive index film layer is greater than 3.6, and the extinction coefficient is less than 0.005.
  • the light transmittance of the high refractive index film can be increased, the loss of light in the pass band of the high refractive index film can be reduced, the intensity of the light passing through the near-infrared bandpass filter 5 can be increased, and the signal can be improved The clarity.
  • part of the material of the high refractive index film layer is in a crystalline state, and the other part is in an amorphous state; the ratio between the volume of the crystalline part and the volume of the high refractive index film layer is 10% To within 20%.
  • the temperature drift of the pass band is smaller.
  • the volume ratio of the part where the crystal structure is crystalline is 15%.
  • the material of the high refractive index film layer includes silicon hydride, germanium hydride, silicon borohydride, germanium borohydride, nitrogen-doped silicon hydride, nitrogen-doped germanium hydride, phosphorus-doped silicon hydride, and phosphorus-doped germanium hydride.
  • Si x Ge 1-x is Si 0.4 Ge 0.6 .
  • the mixture can be silicon germanium hydride, and the ratio of silicon to germanium can be any ratio; the mixture can be nitrogen-doped silicon germanium hydride, or boron-doped phosphorus-doped germanium hydride.
  • SiO p N q may be SiON 2/3 .
  • the mixture is TiO 2 and Al 2 O 3 , or Ta 2 O 5 and Nb 2 O 5 , or SiO 2 , SiCN and SiC.
  • the material of the second low refractive index film layer includes a mixture of SiO 2 and TiO 2 in a ratio of 2:1
  • the material of the third low refractive index film layer includes a mixture of SiO 2 and TiO 2 in a ratio of 1:3. mixture.
  • the main film system further includes a fourth refractive index film layer, and the refractive index of the first low refractive index film layer is not equal to the refractive index of the fourth low refractive index film layer.
  • the first low-refractive index film layer and the fourth low-refractive index film layer are respectively arranged on the main film system 52, which can make the setting form of the main film system 52 more flexible, and can be appropriately matched with the substrate 51 with different characteristics.
  • the form of the first preset stack structure is: (LH) s -L or (HL) s
  • the low refractive index film layer L may alternately be the first low refractive index film layer and the fourth low refractive index film layer. ⁇ Film layer.
  • the form of the first preset stack structure is: (L 1 -L 4 -L 1 -H) s -L 1 ; (L 1 -L 4 -L 1- H) s -L 4 ; H-(L 1 -L 4 -L 1 -H) s -L 1 ; or H-(L 1 -L 4 -L 1 -H) s -L 4 ; H represents high refraction film rate, L 1 represents a first low refractive index film, L 4 fourth representative of the low refractive index film layer, S represents the structure forms in the parentheses the number of repeats, s is an integer equal to 1.
  • the main film system 52 is a band-pass film system.
  • the main film system 52 is a narrow-band-pass film system
  • the auxiliary film system 53 is a wideband-pass film system or a long-wave-pass film system.
  • the main film system 52 and the auxiliary film system 53 are generated by a sputtering reaction device or an evaporation device.
  • the narrow band pass film system has at least one pass band.
  • the film layer of the narrow band pass film system may be a sputtering reactive plating layer.
  • a main film system 52 is disclosed, as shown in Table 1:
  • Table 1 A preset stack structure of the main film system (thickness unit: nm)
  • the main film system 52 is a single-channel narrow band pass film system.
  • the layers in Table 1 refer to the layers along the stacking direction.
  • the first layer is the film layer closest to the substrate 51, and the 29th layer is the one furthest away from the substrate 51.
  • Film layer, the material of the film layer in the same column in the table is the same.
  • the odd-numbered layer is the first low-refractive-index film layer
  • the even-numbered layer is the high-refractive-index film layer
  • the material of the even-numbered layer is amorphous hydrogenated silicon, that is, a-Si:H.
  • the transmittance curve of the main film system 52 is shown in FIG. 3, corresponding to a wavelength range of 700 nm to 1200 nm, and includes a pass band.
  • the center wavelength of the pass band of the main film system 52 is about 950 nm.
  • a method for plating the main film system 52 evacuating the sputtering reaction equipment to a vacuum degree of less than 5 ⁇ 10 -5 Torr, placing the substrate 51 and the silicon target in corresponding positions; setting the argon flow rate from 10 sccm to 80 sccm ,
  • the sputtering power is greater than 3000kw
  • the oxygen flow rate is 10sccm to 80sccm
  • the processing temperature is 80°C to 300°C to plate low refractive index films.
  • the flow rate of argon gas is set to 45 sccm and the flow rate of oxygen gas is set to 45 sccm.
  • the argon flow rate is set to 10 sccm to 80 sccm
  • the sputtering power is greater than 3000 kw
  • the hydrogen flow rate is set to 10 sccm to 80 sccm.
  • the hydrogen flow rate is set to 45 sccm.
  • a main film system 52 is disclosed, as shown in Table 2:
  • Table 2 A preset stack structure of the main film system (thickness unit: nm)
  • the main film system 52 is a narrow band pass film system with two pass bands.
  • the first layer is the film layer closest to the substrate 51.
  • the transmittance curve of the main film system 52 is shown in Figure 4, corresponding to wavelengths from 700 nm to 1200 nm.
  • the range includes a passband with a center wavelength of about 960nm and a passband with a center wavelength of about 1130nm.
  • the auxiliary film system 53 is a long wave pass film system; corresponding to the wavelength range of 350 nm to 1200 nm, the long wave pass film system has at least one pass band and one cutoff band, and the pass band of the long wave pass film system covers the narrow band pass film The passband of the tie.
  • a long-wave pass film system is disclosed, as shown in Table 3:
  • Table 3 A preset stack structure of a long-wave pass film system (thickness unit: nm)
  • the transmittance curve of the auxiliary film system 53 is shown in FIG. 5, the long wave pass film system includes a pass band and a cutoff band, and the pass band range of the long wave pass film system is approximately 900nm to 1000nm.
  • a near-infrared band-pass filter includes the long-wave-pass film system and the narrow-band-pass film system disclosed in Table 1, and the pass-band of the long-wave-pass film system covers the pass-band of the narrow-band-pass film system.
  • the cut-off band covers at least the 350nm to 850nm band, which can cut off visible light.
  • a method for plating the long-wave pass film system evacuating the vacuum evaporation reaction equipment to a vacuum degree of less than 9 ⁇ 10 -4 Torr, placing the substrate 51 and the coating raw materials in corresponding positions; setting the argon flow rate from 10 sccm to 20 sccm, Voltage 900V to 1300V, current 900mA to 1300mA, oxygen flow rate 30sccm to 90sccm, working temperature 80°C to 300°C.
  • the flow rate of argon gas is 13 sccm to 16 sccm
  • the flow rate of oxygen gas is 40 sccm to 70 sccm
  • the processing temperature is 80°C to 150°C.
  • the argon flow rate is 15 sccm
  • the oxygen flow rate is 60 sccm
  • the processing temperature is 120°C.
  • a long-wave pass film system is disclosed, as shown in Table 4:
  • Table 4 A preset stack structure of a long-wavelength pass film system (thickness unit: nm)
  • the transmittance curve of the auxiliary film system 53 is shown in FIG. 6.
  • the long wave pass film system includes a pass band and a cutoff band.
  • the pass band range of the long wave pass film system is approximately 900nm to 1000nm.
  • a near-infrared band-pass filter includes the long-wave-pass film system and the narrow-band-pass film system disclosed in Table 1, and the pass-band of the long-wave-pass film system covers the pass-band of the narrow-band-pass film system.
  • the auxiliary film system 53 is a broadband pass film system, and the pass band of the broadband pass film system covers the pass band of the narrow band pass film system; in a wavelength region smaller than the minimum wavelength of the pass band of the broadband pass film system, the broadband The average cut-off of the pass film system is greater than that of the narrow-band pass film system.
  • the thickness d f1 of the main film system 52 satisfies: d f1 ⁇ 7 ⁇ m; the thickness d f2 of the auxiliary film system satisfies: d f2 ⁇ 8 ⁇ m.
  • the linear expansion coefficient ⁇ of the substrate 51 satisfies: 3 ⁇ 10 -6 /°C ⁇ 17 ⁇ 10 -6 /°C, and the Poisson's ratio ⁇ s of the substrate 51 satisfies: 0.2 ⁇ s ⁇ 0.32
  • the refractive index n 1 of the high refractive index film layer satisfies: 3 ⁇ n 1
  • the Poisson's ratio ⁇ 1 of the high refractive index film layer satisfies: 0.1 ⁇ 1 ⁇ 0.5;
  • z 1 is the weight coefficient of the high refractive index film layer
  • z 2 is the weight coefficient of the first low refractive index film layer.
  • z 1 is equal to the ratio of the sum of the thickness of all high refractive index film layers to the thickness of the main film system 52
  • z 1 +z 2 1.
  • the equivalent refractive index n of the main film system 52 is: m is the interference order of the filter, 0 ⁇ m. Since n 2 ⁇ n 1 , it can be seen that: 0 ⁇ n ⁇ n 1 . Specifically, 1 ⁇ m ⁇ 15.
  • the film layer aggregation density P o of the main film system 52 satisfies: 0.9 ⁇ P 0 ⁇ 1.6.
  • the center wavelength ⁇ c of the pass band of the near-infrared band-pass filter provided by the embodiment of the application changes with the temperature T, and the temperature drift ⁇ c / ⁇ T of ⁇ c satisfies:
  • n c is the initial temperature T 0 of the main film system 52
  • the equivalent refractive index below, d c is the physical thickness of the main film system 52 at the initial temperature T 0 .
  • n T 52 for the main film-based equivalent refractive index of the measured temperature T T is the physical thickness of the main film line 52 at the measured temperature T T.
  • a near-infrared band-pass filter 5 is disclosed.
  • the material of the substrate 51 of the near-infrared band-pass filter 5 is glass. More specifically, a shott filter can be used. D263T, within the range of -30°C to 70°C, the linear expansion coefficient ⁇ of the substrate 51 is 7.2 ⁇ 10 -6 /°C, and the Poisson's ratio ⁇ s is 0.208.
  • the main film system 52 of the near-infrared bandpass filter 5 is shown in Table 5:
  • Table 5 A preset stack structure of the main film system (thickness unit: nm)
  • the first layer in the main film system 52 is the film layer closest to the substrate 51, and the other film layers are stacked in the stacking direction; the odd-numbered layer is the first low refractive index film layer, the refractive index is less than 3, and the Poisson's ratio ⁇ 2 is 0.17; The even-numbered layer is a high-refractive index film layer, and the Poisson's ratio ⁇ 1 is 0.28.
  • the film layer of the main film system 52 is a sputtering reaction plating layer, the film layer concentration P 0 is 1.01, and the linear expansion coefficient ⁇ is 3 ⁇ 10 -6 /°C.
  • the auxiliary film system 53 of the near-infrared band-pass filter 5 is shown in Table 6:
  • Table 6 A preset stack structure of auxiliary film system (thickness unit: nm)
  • the film layer of the auxiliary film system 53 is a sputtering reaction film layer
  • the material of the second low refractive index film layer is silicon dioxide
  • the material of the third low refractive index film layer is titanium dioxide.
  • the transmittance curve of the near-infrared band-pass filter 5 is shown in Figs. 7 and 8.
  • Fig. 7 shows the center of the pass-band when the near-infrared band-pass filter 5 corresponds to light incident at an angle of 0 degrees
  • the wavelength is 865nm, corresponding to the incident light at an angle of 30 degrees
  • the center wavelength of the passband is 858nm.
  • Fig. 8 shows the transmittance curve of the near-infrared band-pass filter 5 at a reference temperature of 0°C and multiple operating temperatures.
  • a near-infrared band-pass filter 5 is disclosed.
  • the material of the substrate 51 of the near-infrared band-pass filter 5 is glass.
  • CDGM Chengdu Guangming Optoelectronics
  • H-ZPK5 within the range of -30°C to 70°C, the linear expansion coefficient ⁇ of the substrate 51 is 12.4 ⁇ 10 -6 /°C, within the range of 100°C to 300°C, the linear expansion coefficient ⁇ of the substrate 51 is 14.5 ⁇ 10 -6 /°C, Poisson's ratio ⁇ s is 0.3.
  • the main film system 52 of the near-infrared band-pass filter 5 is shown in Table 7:
  • Table 7 A preset stack structure of the main film system (thickness unit: nm)
  • the film layer of the main film system 52 is a sputtering reactive plating layer, and the first layer is closest to the substrate 51.
  • the material of the high refractive index film layer of the main film system 52 is Si:H, and the Poisson ratio ⁇ 1 is 0.28; the material of the first low refractive index film layer is SiO 2 , and the material of the fourth low refractive index film layer is Si 3 N 4 , Poisson’s ratio ⁇ 2 is 0.17;
  • the structural form of the main film system 52 is: H-(L 1 -L 4 -L 1 -H) s -L 4 , the film aggregation density P 0 is 1.01,
  • the coefficient of linear expansion ⁇ is 3.5 ⁇ 10 -6 /°C.
  • the auxiliary film system 53 of the near-infrared band-pass filter 5 adopts the preset stack structure shown in Table 6, and the film layer of the auxiliary film system 53 is an evaporation coating.
  • FIGS. 9 and 10 show that when the crystalline structure of the high refractive index film layer is amorphous, the transmittance curve of the near-infrared band-pass filter 5 is shown in FIGS. 9 and 10.
  • Fig. 9 shows that when the near-infrared band-pass filter 5 corresponds to light incident at an angle of 0 degrees, the center wavelength of the pass band is 950.5 nm, and when light incident at an angle of 30 degrees, the center wavelength of the pass band is 941.9 nm.
  • Fig. 10 shows the transmittance curve of the near-infrared band-pass filter 5 at a reference temperature of 0°C at multiple operating temperatures, and the drift of the pass band is: ⁇ c / ⁇ T ⁇ 0.055 nm/° C .
  • the transmittance of the side of the passband close to the short wave is 10% and 90%, the steepness is 6nm and 10nm, and the drift is 8nm; the transmittance of the side of the passband close to the long wave (IR side) is 10% and 90% The steepness is 7nm and 7nm, and the drift is 9.5nm.
  • the crystal structure of a part of the high refractive index film layer of the near-infrared bandpass filter 5 is crystalline, and specifically may be single crystal, polycrystalline or microcrystalline, and the volume of this part accounts for the high refractive index. 15% of the volume of the film.
  • the transmittance curve of the near-infrared band pass filter 5 is shown in FIG. 11.
  • Figure 11 shows the transmittance curve of the near-infrared band-pass filter 5 at a reference temperature of 0°C and multiple operating temperatures.
  • the drift of the passband is: ⁇ c / ⁇ T ⁇ 0.03nm/°C ( About 0.025nm/°C), it can be seen that when the volume of the crystalline structure in the high refractive index film accounts for 15%, the drift of the passband is smaller.
  • a near-infrared band-pass filter 5 is disclosed, and the material of the substrate 51 of the near-infrared band-pass filter 5 is glass.
  • CDGM Chengdu Guangming Optoelectronics
  • H-ZPK7 can be used, within the range of -30°C to 70°C, the linear expansion coefficient ⁇ of the substrate 51 is 13.4 ⁇ 10 -6 /°C, within the range of 100°C to 300°C, the substrate The linear expansion coefficient ⁇ of 51 is 15.9 ⁇ 10 -6 /°C, and the Poisson's ratio ⁇ s is 0.306.
  • the main film system 52 of the near-infrared band-pass filter 5 is shown in Table 8:
  • Table 8 A preset stack structure of the main film system (thickness unit: nm)
  • the film layer of the main film system 52 is a sputtering reactive plating layer, and the first layer is closest to the substrate 51.
  • the material of the high refractive index film layer of the main film system 52 is Ge:H, and the Poisson ratio ⁇ 1 is 0.22; the material of the second low refractive index film layer is SiO 2 , and the Poisson ratio ⁇ 2 is 0.17;
  • the collection density P 0 of the film layer of the system 52 is 1.08, and the linear expansion coefficient ⁇ is 2.7 ⁇ 10 -6 /°C.
  • the auxiliary film system 53 of the near-infrared band-pass filter 5 is shown in Table 9:
  • Table 9 A preset stack structure of auxiliary film system (thickness unit: nm)
  • the film layer of the auxiliary film system 53 is an evaporation coating layer.
  • FIGS. 12 and 13 show that when the near-infrared band-pass filter 5 corresponds to light incident at an angle of 0 degrees, the center wavelength of the pass band is 946 nm, and when light incident at an angle of 30 degrees, the center wavelength of the pass band is 937 nm.
  • Fig. 13 shows the transmittance curve of the near-infrared band-pass filter 5 at a reference temperature of 0°C and multiple operating temperatures. The drift of the passband is: ⁇ c / ⁇ T ⁇ 0.015 nm/° C .
  • a near-infrared band-pass filter 5 is disclosed, and the material of the substrate 51 of the near-infrared band-pass filter 5 is glass.
  • CDGM Chengdu Guangming Optoelectronics
  • H-ZPK7 can be used, within the range of -30°C to 70°C, the linear expansion coefficient ⁇ of the substrate 51 is 13.4 ⁇ 10 -6 /°C, within the range of 100°C to 300°C, the substrate The linear expansion coefficient ⁇ of 51 is 15.9 ⁇ 10 -6 /°C, and the Poisson's ratio ⁇ s is 0.306.
  • the main film system 52 of the near-infrared band-pass filter 5 is shown in Table 10:
  • Table 10 A preset stack structure of the main film system (thickness unit: nm)
  • the first layer in the main film system 52 is the film layer closest to the substrate 51; the odd-numbered layer is the first low-refractive-index film layer, and the Poisson's ratio ⁇ 2 is 0.17; the even-numbered layer is the high-refractive-index film layer, and the Poisson's ratio ⁇ 1 is 0.26.
  • the film layer of the main film system 52 is a sputtering reaction plating layer, the film layer concentration P 0 is 1.02, and the linear expansion coefficient ⁇ is 2 ⁇ 10 -6 /°C.
  • the auxiliary film system 53 of the near-infrared band-pass filter 5 is shown in Table 11:
  • Table 11 A preset stack structure of auxiliary film system (thickness unit: nm)
  • the film layer of the auxiliary film system 53 is a sputtering reactive coating layer, the odd-numbered layer is the second low-refractive-index film layer, and the even-numbered layer is the high-refractive index film.
  • the transmittance curve of the near-infrared band pass filter 5 is shown in FIGS. 14 and 15.
  • 14 shows that when the near-infrared bandpass filter 5 corresponds to light incident at an angle of 0 degrees, the center wavelength of the pass band is 950 nm, and when light incident at an angle of 30 degrees, the center wavelength of the pass band is 942 nm.
  • Fig. 15 shows the transmittance curve of the near-infrared band-pass filter 5 at a reference temperature of 0°C and multiple operating temperatures.
  • the drift of the passband is: ⁇ c / ⁇ T ⁇ 0.015 nm/° C .
  • FIG. 2 shows a schematic diagram of an optical sensing system in use according to an embodiment of the present application; referring to FIG. 1 and FIG. 2, the optical sensing system includes a near-infrared bandpass filter 5 and an image sensor 6.
  • a first lens assembly 4 is also provided on the object side of the near-infrared narrowband filter 5.
  • the light emitted or reflected by the target 1 to be tested passes through the first lens assembly 4 and then reaches the near-infrared band-pass filter 5.
  • the light passes through the near-infrared
  • the filtered light formed by the band-pass filter 5 reaches the image sensor 6, and the filtered light triggers the image sensor 6 to form an image signal.
  • the optical sensing system provided with the infrared bandpass filter 5 disclosed in the present application can be applied to at least -150°C to 300°C, and the quality of the formed image is stable.
  • the optical sensing system may also be an infrared recognition system, including an infrared light source 2 (Infrared Radiation, IR light source), a second lens assembly 3, a first lens assembly 4, a near-infrared bandpass filter 5, and an image sensor 6.
  • the image sensor 6 is a three-dimensional sensor.

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Abstract

一种近红外带通滤光片（5）及光学传感系统，近红外带通滤光片（5）包括：基底（51）、主膜系（52）和辅膜系（53），主膜系（52）位于基底（51）的第一侧上，辅膜系（53）位于基底（51）的第二侧上，第二侧与第一侧相对；主膜系（52）包括按第一预设堆叠结构设置的高折射率膜层和第一低折射率膜层；辅膜系（53）包括按第二预设堆叠结构设置的第二低折射率膜层和第三低折射率膜层，或者，高折射率膜层与第二低折射率膜层；在780nm至3000nm波长范围内，近红外带通滤光片（5）具有至少一个通带，在温度从-150℃改变至300℃时，至少一个通带的中心波长的漂移量小于0.15nm/℃。近红外带通滤光片（5）可以用于在温度变化的工作环境下滤光，滤后的光线稳定，以提高光学传感系统的成像质量。

Description

近红外带通滤光片及光学传感系统
相关申请的交叉引用
本申请要求于2019年6月5日递交于中国国家知识产权局(CNIPA)的、申请号为201910486854.8、发明名称为“近红外带通滤光片及光学传感系统”的中国发明专利申请的优先权和权益，该中国发明专利申请通过引用整体并入本文。
技术领域
本申请涉及滤光片领域，更具体的，涉及一种近红外带通滤光片及光学传感系统。
背景技术
红外传感系统通过接收目标反射的红外线形成图像，进而通过处理图像来得到目标的信息，通常应用在人脸识别、手势识别、智能家居等领域。红外传感系统包括镜头、滤光片及图像传感器等部件
红外传感系统的性能受温度的影响称为温度稳定性。例如车载激光雷达，太空探测器或光通信设备等设备经常在极端温度下工作；这些设备实际使用时的温度和制造、调试时的温度相差大，这些设备上的红外传感系统的温度稳定性要求高。为了保证设备的温度稳定性，现有技术通常对镜头的结构、材质等进行改进，以保证红外传感系统的成像质量；或关注图像传感器的电性能的温漂，以保证红外传感系统的图像数据的质量。
然而，依然需要光学特性受温度变化影响小的滤光片，比如通带的中心波长偏移量受温度变化的影响小的遮光片。遮光片的通带变化也会影响红外传感系统的成像质量，而且现有技术通常只关注光线的入射角度对通带中心波长偏移量的影响，因此，期望提供一种通带中心波长偏移量受温度变化影响小的滤光片。
发明内容
为解决或部分解决现有技术中的上述缺陷，本申请提供了一种近红外带通滤光片及光学传感系统。
第一方面，本申请的实施例提供了一种近红外带通滤光片，包括：基底、主膜系和辅膜系，主膜系位于基底的第一侧上，辅膜系位于基底的第二侧上，第二侧与第一侧相对；主膜系包括按第一预设堆叠结构设置的高折射率膜层和第一低折射率膜层；辅膜系包括按第二预设堆叠结构设置的第二低折射率膜层和第三低折射率膜层，第二低折射率膜层的折射率与第三低折射率膜层的折射率不同，或者，辅膜系包括按第二预设堆叠结构设置的高折射率膜层与第二低折射率膜层；在780nm至3000nm波长范围内，近红外带通滤光片具有至少一个通带，在温度从-150℃改变至300℃时，至少一个通带的中心波长的漂移量小于0.15nm/℃。
在一个实施方式中，在温度从-30℃改变至85℃时，近红外带通滤光片的通带中心波长的漂移量小于0.09nm/℃。
在一个实施方式中，对应780nm至3000nm波长范围内的任一波长，高折射率膜层的折射率均大于3。
在一个实施方式中，高折射率膜层的消光系数小于0.01。
在一个实施方式中，对应850nm波长处，高折射率膜层的折射率大于3.6，消光系数小于0.005。
在一个实施方式中，主膜系的厚度d f1满足：d f1＜7μm；辅膜系的厚度d f2满足：d f2＜8μm。
在一个实施方式中，高折射率膜层的一部分的晶体结构为晶态，另一部分的晶体结构为非晶态；晶体结构为晶态的部分的体积与高折射率膜层的体积之间的比率处于10％至20％以内。
在一个实施方式中，高折射率膜层的材料包括氢化硅、氢化锗、掺硼氢化硅、掺硼氢化锗、掺氮氢化硅、掺氮氢化锗、掺磷氢化硅、掺磷氢化锗或Si xGe 1-x中的一种或多种的混合物，其中，0＜x＜1。
在一个实施方式中，第一低折射率膜层的材料、第二低折射率膜 层的材料及第三低折射率膜层的材料各自包括SiO 2、Si 3N 4、SiO pN q、Ta 2O 5、Nb 2O 5、TiO 2、Al 2O 3、SiCN、SiC的一种或多种的混合物，其中，q＝(4-2p)/3,0＜p＜1。
在一个实施方式中，基底的材料包括玻璃。
在一个实施方式中，沿背离所述基底的方向，第一预设堆叠结构的形式为：(L 1-H) s-L 1，或者，(H-L 1) s；H代表高折射率膜层，L 1代表第一低折射率膜层，s代表括号内的结构形式重复的次数，s为大于等于1的整数。
在一个实施方式中，主膜系还包括第四低折射率膜层，第一低折射率膜层的折射率不等于第四低折射率膜层的折射率。
在一个实施方式中，沿背离基底的方向，第一预设堆叠结构的形式为：(L 1-L 4-L 1-H) s-L 1；(L 1-L 4-L 1-H) s-L 4；H-(L 1-L 4-L 1-H) s-L 1；或者H-(L 1-L 4-L 1-H) s-L 4；H代表高折射率膜层，L 1代表第一低折射率膜层，L 4代表第四低折射率膜层，s代表括号内的结构形式重复的次数，s为大于等于1的整数。
在一个实施方式中，主膜系为窄带通膜系，辅膜系为宽带通膜系或长波通膜系。
在一个实施方式中，对应700nm至1200nm的波长范围，窄带通膜系具有至少一个通带。
在一个实施方式中，辅膜系为长波通膜系；对应350nm至3000nm的波长范围，长波通膜系具有至少一个通带和一个截止带，长波通膜系的通带覆盖窄带通膜系的通带。
在一个实施方式中，辅膜系为宽带通膜系，宽带通膜系的通带覆盖窄带通膜系的通带；在小于宽带通膜系通带的最小波长的波长区域内，宽带通膜系的平均截止度大于窄带通膜系的截止度。
在一个实施方式中，基底的材料的线膨胀系数在3*10 -6/℃至17*10 -6/℃之间。
在一个实施方式中，主膜系和辅膜系通过溅射反应设备或蒸发设备来生成。
第二方面，本申请的实施例还提供了一种光学传感系统，包括图 像传感器和前述的近红外带通滤光片，近红外带通滤光片设置于图像传感器的感光侧。
本申请提供的近红外带通滤光片，基底的两面分别设置有主膜系和辅膜系，辅膜系的膜层的折射率小于或等于主膜系的高折射率膜层的折射率，使得辅膜系的等效折射率不大于主膜系的等效折射率，同时近红外带通滤光片的结构设置为：主膜系包括按第一堆叠结构设置的膜层以配合基底，辅膜系包括按第二堆叠结构设置的膜层，使得辅膜系的通带中心波长温漂不大于主膜系的通带中心波长的温漂；继而在780nm至3000nm波长范围内、温度从-150℃改变至300℃时，近红外带通滤光片的通带的中心波长的温漂，漂移量小于0.15nm/℃，保证近红外的波长范围内的具有可以穿透本申请提供的近红外带通滤光片的光线，在不同温度下，穿透后的光线之间的差异小。设置有本申请提供的近红外带通滤光片的光学传感系统，在温度变化的环境下工作时，成像质量受到的影响较小。
附图说明
通过阅读参照以下附图所作的对非限制性实施例所作的详细描述，本申请的其它特征、目的和优点将会变得更明显：
图1示出了根据本申请实施例的近红外带通滤光片的结构示意图；
图2示出了根据本申请实施例的光学传感系统的使用状态示意图；
图3示出了根据本申请实施例的表1的带通膜系的透光率曲线；
图4示出了根据本申请实施例的表2的带通膜系的透光率曲线；
图5示出了根据本申请实施例的表3的长波通膜系的透光率曲线；
图6示出了根据本申请实施例的表4的长波通膜系的透光率曲线；
图7示出了根据本申请实施例的近红外带通滤光片对应不同角度入射光线的透过率曲线；
图8示出了根据图7对应的近红外带通滤光片在不同温度时的透过率曲线；
图9示出了根据本申请另一实施例的近红外带通滤光片对应不同角度入射光线的透过率曲线；
图10示出了根据图9对应的近红外带通滤光片在不同温度时的透过率曲线；
图11示出了根据本申请另一实施例的近红外带通滤光片在不同温度时的透过率曲线；
图12示出了根据本申请再一实施例的近红外带通滤光片对应不同角度入射光线的透过率曲线；
图13示出了根据图12对应的近红外带通滤光片在不同温度时的透过率曲线；
图14示出了根据本申请再一实施例的近红外带通滤光片对应不同角度入射光线的透过率曲线；
图15示出了根据图14对应的近红外带通滤光片在不同温度时的透过率曲线。
具体实施方式
为了更好地理解本申请，将参考附图对本申请的各个方面做出更详细的说明。应理解，这些详细说明只是对本申请的示例性实施方式的描述，而非以任何方式限制本申请的范围。在说明书全文中，相同的附图标号指代相同的元件。表述“和/或”包括相关联的所列项目中的一个或多个的任何和全部组合。
应注意，在本说明书中，第一、第二、第三等的表述仅用于将一个特征与另一个特征区分开来，而不表示对特征的任何限制。因此，在不背离本申请的教导的情况下，下文中讨论的第一低折射率膜层也可被称作第二低折射率膜层。反之亦然。
在附图中，为了便于说明，已稍微调整了部件的厚度、尺寸和形状。附图仅为示例而并非严格按比例绘制。例如，第一膜系的厚度与长度之间的比例并非按照实际生产中的比例。如在本文中使用的，用语“大致”、“大约”以及类似的用语用作表近似的用语，而不用作表程度的用语，并且旨在说明将由本领域普通技术人员认识到的、测量值或计 算值中的固有偏差。
在本文中，膜层的厚度指是指背离基底的方向的厚度。
还应理解的是，用语“包括”、“包括有”、“具有”、“包含”和/或“包含有”，当在本说明书中使用时表示存在所陈述的特征、元件和/或部件，但不排除存在或附加有一个或多个其它特征、元件、部件和/或它们的组合。此外，当诸如“...中的至少一个”的表述出现在所列特征的列表之后时，修饰整个所列特征，而不是修饰列表中的单独元件。此外，当描述本申请的实施方式时，使用“可”表示“本申请的一个或多个实施方式”。并且，用语“示例性的”旨在指代示例或举例说明。
除非另外限定，否则本文中使用的所有措辞(包括工程术语和科技术语)均具有与本申请所属领域普通技术人员的通常理解相同的含义。还应理解的是，除非本申请中有明确的说明，否则在常用词典中定义的词语应被解释为具有与它们在相关技术的上下文中的含义一致的含义，而不应以理想化或过于形式化的意义解释。
需要说明的是，在不冲突的情况下，本申请中的实施例及实施例中的特征可以相互组合。另外，除非明确限定或与上下文相矛盾，否则本申请所记载的方法中包含的具体步骤不必限于所记载的顺序，而可以任意顺序执行或并行地执行。下面将参考附图并结合实施例来详细说明本申请。
图1示出了根据本申请实施例的一种近红外带通滤光片的结构示意图。参考图1，本申请实施例提供的近红外带通滤光片5包括：基底51、主膜系52和辅膜系53，主膜系52位于所述基底51的第一侧上，辅膜系53位于基底的第二侧上，第一侧和第二侧相对。基底51为透明基底，透明基底的材料可选地为水晶、高硼硅玻璃等，具体地可以为D263T、AF32、Eagle XG、H-ZPK5、H-ZPK7等。示例性的，基底51可为透明片体，图1中的上下方向为透明片体的厚度方向，透明片体的上侧和下侧相对。主膜系52设置于基底51上面的外侧，辅膜系53设置于基底51下面的外侧。
主膜系52包括按第一预设堆叠结构设置的高折射率膜层和第一低折射率膜层，对应同一波长时，高折射率膜层的折射率n 1大于第一 低折射率膜层的折射率n 21。可选地，沿背离基底51的方向，第一预设堆叠结构的形式为：(L 1-H) s-L 1或(H-L 1) s等形式，H代表高折射率膜层，L 1代表第一低折射率膜层，s代表括号内的结构形式重复的次数，s为大于等于1的整数。示例性的，当s取5时，第一预设堆叠结构的形式为：L 1HL 1HL 1HL 1HL 1HL 1。
在实施方式中，主膜系52按第一预设堆叠结构设置膜层后，膜层聚集密度P 0满足：0.9＜P 0＜1.6。
辅膜系53包括按第二预设堆叠结构设置的第二低折射率膜层和第三低折射率膜层，或者，高折射率膜层和第二低折射率膜层。当辅膜系53包括按第二预设堆叠结构设置的第二低折射率层和第三低折射率膜层时，第二低折射率层的折射率不等于第三低折射率膜层的折射率，且第三低折射率膜层的折射率小于主膜系52的高折射率膜层的折射率。第二预设堆叠结构可以参照第一预设堆叠结构，以L 2代指第二低折射率膜层，L 3代指第三低折射率膜层第二预设堆叠结构可以是：(L 2-L 3) z-L 2或(L 2-L 3) z，z为大于等于1的整数。
由于主膜系52包括按第一预设堆叠结构设置的高折射率膜层和第一低折射率膜层，辅膜系53包括按第二预设堆叠结构设置的第二低折射率层和第三低折射率膜层，因此本申请公开的近红外带通滤光片5可以为干涉型滤光片。第三低折射率膜层的折射率不大于高折射率膜层的折射率，使得主膜系52的特性对近红外带通滤光片5的特性有更大的影响。主膜系52的各个膜层可以是溅射反应方式生成的膜层，辅膜系53的各个膜层可以是溅射反应方式或者蒸发方式生成的膜层，这样的制造方式使基底51、主膜系52和辅膜系53结合为一体。
在780nm至3000nm波长范围内，本申请实施例公开的近红外带通滤光片5具有至少一个通带，在温度从-150℃改变至300℃时，近红外带通滤光片5的该通带的中心波长的漂移量小于0.15nm/℃。在实施方式中，在温度从-150℃改变至300℃时，该通带的中心波长的漂移量小于0.12nm/℃。在实施方式中，该通带的中心波长的漂移量小于0.09nm/℃。在实施方式中，在温度从-30℃改变至85℃时，该近红外带通滤光片的通带中心波长的漂移量小于0.09nm/℃，在实 施方式中，该近红外带通滤光片的通带中心波长的漂移量小于0.05nm/℃。
780nm至3000nm波长范围位于近红外的位置，在该波长范围形成通带，使得透过近红外带通滤光片5的光线至少包括一部分近红外光。通过主膜系52的结构与基底51匹配，满足在温度从-150℃改变至300℃时，近红外带通滤光片5的该通带的中心波长的漂移量小于0.15nm/℃。
本申请公开的近红外带通滤光片5，至少可以应用在大约-150℃的温度环境及大约300℃的温度环境。通带的中心波长在780nm至3000nm波长范围内具有小于0.15nm/℃的漂移量，在温度变化较大的工作环境中，经过本申请公开的近红外带通滤光片5的光线中，含有稳定地区间内的近红外光线。利用该稳定地区间内的近红外光线携带的信号稳定。
在示例性实施方式中，对应780nm至3000nm波长范围内的任一波长，高折射率膜层的折射率均大于3。在实施方式中，对应800nm至1100nm范围内的任意波长，高折射率膜层的折射率均大于3.2。在实施方式中，对应800nm至900nm范围内的任意波长，高折射率膜层的折射率均大于3.5。在靠近可见光的波长区域中，高折射率膜层具有更高的折射率，可以提高该波长范围内的红外光线携带的信号的温度稳定性，而且，当高折射率膜层的折射率大于3.5时，可以进一步提高主膜系52的结构对本申请公开的近红外带通滤光片5的光学特性的影响，这样主膜系52采用更简单形式的第一预设堆叠结构与基底51配合，就可以达到预期效果。
在示例性实施方式中，高折射率膜层的消光系数小于0.01。
在示例性实施方式中，对应850nm波长处，高折射率膜层的折射率大于3.6，消光系数小于0.005。通过设定消光系数可以增加高折射率膜层的透光性，减少高折射率膜层的通带范围内光线的损耗，可以提高经过近红外带通滤光片5的光线的强度，提高信号的清晰度。
在示例性实施方式中，高折射率膜层的材料一部分为晶态，另一部分为非晶态；晶体结构为晶态的部分的体积与高折射率膜层的体积 之间的比率处于10％至20％以内。本申请公开的近红外带通滤光片5含有如此晶体结构的高折射率膜层时，其通带的温漂更小。在实施方式中，晶体结构为晶态的部分的体积占比为15％。
在示例性实施方式中，高折射率膜层的材料包括氢化硅、氢化锗、掺硼氢化硅、掺硼氢化锗、掺氮氢化硅、掺氮氢化锗、掺磷氢化硅、掺磷氢化锗或Si xGe 1-x中的一种或多种的混合物，其中，0＜x＜1。示例性的，Si xGe 1-x为Si 0.4Ge 0.6。示例性的，混合物可以为氢化硅锗，硅和锗的比例可以是任意比例；混合物可以为掺氮氢化硅锗，还可以为掺硼掺磷氢化锗。
在示例性实施方式中，第一低折射率膜层的材料、第二低折射率膜层的材料及第三低折射率膜层的材料各自包括SiO 2、Si 3N 4、SiO pN q、Ta 2O 5、Nb 2O 5、TiO 2、Al 2O 3、SiCN、SiC的一种或多种的混合物，其中q＝(4-2p)/3,0＜p＜1。示例性的，SiO pN q可以为SiON 2/3。示例性的，混合物为TiO 2与Al 2O 3，或Ta 2O 5与Nb 2O 5，或SiO 2、SiCN与SiC。示例性的，第二低折射率膜层的材料包括SiO 2和TiO 2按2:1比例形成的混合物，第三低折射率膜层的材料包括SiO 2和TiO 2按1:3比例形成的混合物。
在示例性实施方式中，主膜系还包括第四折射率膜层，所述第一低折射率膜层的折射率不等于所述第四低折射率膜层的折射率。在主膜系52分别设置第一低折射率膜层和第四低折射率膜层，可以使主膜系52的设置形式更灵活，与不同特性的基底51可以恰当的配合。可选地，第一预设堆叠结构的形式为：(L-H) s-L或(H-L) s，低折射率膜层L可以依次交替的为第一低折射率膜层和第四低折射率膜层。
在示例性实施方式中，沿背离基底的方向，第一预设堆叠结构的形式为：(L 1-L 4-L 1-H) s-L 1；(L 1-L 4-L 1-H) s-L 4；H-(L 1-L 4-L 1-H) s-L 1；或者H-(L 1-L 4-L 1-H) s-L 4；H代表高折射率膜层，L 1代表第一低折射率膜层，L 4代表第四低折射率膜层，S代表括号内的结构形式重复的次数，s为大于等于1的整数。
在示例性实施方式中，主膜系52为带通膜系，在示例性实施方式中，主膜系52为窄带通膜系，辅膜系53为宽带通膜系或长波通膜系。
在示例性实施方式中，主膜系52和辅膜系53通过溅射反应设备或蒸发设备生成。
在示例性实施方式中，对应700nm至1200nm的波长范围，窄带通膜系具有至少一个通带。该窄带通膜系的膜层可为溅射反应镀层。
在一种具体的实施方式中公开了一种主膜系52，如表1所示：
表1：一种主膜系的预设堆叠结构(厚度单位：nm)
Figure PCTCN2019130575-appb-000001
该主膜系52为单通道的窄带通膜系，表1中的层指沿堆叠方向的第几层，其中第1层为最贴近基底51的膜层，第29层为最远离基底51的膜层，表格中同一列的膜层的材料相同。该主膜系52的膜层中，奇数层为第一低折射率膜层，偶数层为高折射率膜层，偶数层的材料为非晶态氢化硅即a-Si:H。该主膜系52的透过率曲线如图3所示，对应700nm至1200nm的波长范围，包括一个通带，该主膜系52的通带中心波长大约950nm。
一种镀制该主膜系52的方法：将溅射反应设备内抽真空至真空度小于5×10 -5Torr，将基底51和硅靶材放置在对应位置；设置氩气流量10sccm至80sccm，溅射功率大于3000kw，氧气流量10sccm至80sccm，加工温度80℃至300℃，以镀制低折射率膜层。在示例性实施方式中，设置氩气流量45sccm，氧气流量45sccm。
此外，镀制高折射率膜层时，设置氩气流量10sccm至80sccm， 溅射功率大于3000kw，设置氢气流量在10sccm至80sccm。在示例性实施方式中，设置氢气流量45sccm。
在一种具体的实施方式中公开了一种主膜系52，如表2所示：
表2：一种主膜系的预设堆叠结构(厚度单位：nm)
Figure PCTCN2019130575-appb-000002
该主膜系52为两个通带的窄带通膜系，第1层为最贴近基底51的膜层，该主膜系52的透过率曲线如图4所示，对应700nm至1200nm的波长范围，包括中心波长大约960nm的通带和中心波长大约1130nm的通带。
在示例性实施方式中，辅膜系53为长波通膜系；对应350nm至1200nm的波长范围，长波通膜系具有至少一个通带和一个截止带，长波通膜系的通带覆盖窄带通膜系的通带。
在一种具体的实施方式中公开了一种长波通膜系，如表3所示：
表3：一种长波通膜系的预设堆叠结构(厚度单位：nm)
Figure PCTCN2019130575-appb-000003
Figure PCTCN2019130575-appb-000004
对应350nm至1200nm的波长范围，该辅膜系53的透过率曲线如图5所示，该长波通膜系包括一个通带和一个截止带，该长波通膜系的通带的范围大约是900nm至1000nm。示例性的，一种近红外带通滤光片包括该长波通膜系与表1公开的窄带通膜系，该长波通膜系的通带覆盖该窄带通膜系的通带。截止带至少覆盖了350nm至850nm波段，可以将可见光截止。
一种镀制该长波通膜系的方法：将真空蒸发反应设备内抽真空至真空度小于9×10 -4Torr，将基底51和镀层原材料放置在对应位置；设置氩气流量10sccm至20sccm，电压900V至1300V，电流900mA至1300mA，氧气流量30sccm至90sccm，工作温度80℃至300℃。以镀制各膜层层，在示例性实施方式中，设置氩气流量13sccm至16sccm，氧气流量40sccm至70sccm，加工温度80℃至150℃。在示例性实施方式中，设置氩气流量15sccm，氧气流量60sccm，加工温度120℃。
在一种具体的实施方式中公开了一种长波通膜系，如表4所示：
表4：一种长波通膜系的预设堆叠结构(厚度单位：nm)
材料 Nb 2O 5 SiO 2 Si:H SiO 2 Si:H SiO 2
层 1 2 3 4 5 6
厚度 91.91 46.65 171.57 84.57 60 41.2
层 7 8 9 10 11 12
厚度 71.23 77.52 56.51 82.7 20 20
层 13 14 15 16 17 18
厚度 20 87.39 204.08 72.16 22.45 20
层 19 20 21 22 23 24
厚度 20 71.46 60.69 121.32 48.2 28.68
层 25 26 27 28 29 30
厚度 77.34 134.21 46.61 72.18 24.95 25.79
对应350nm至1200nm的波长范围，该辅膜系53的透过率曲线如图6所示，该长波通膜系包括一个通带和一个截止带，该长波通膜 系的通带的范围大约是900nm至1000nm。示例性的，一种近红外带通滤光片包括该长波通膜系与表1公开的窄带通膜系，该长波通膜系的通带覆盖该窄带通膜系的通带。
在示例性实施方式中，辅膜系53为宽带通膜系，宽带通膜系的通带覆盖窄带通膜系的通带；在小于宽带通膜系通带的最小波长的波长区域内，宽带通膜系的平均截止度大于窄带通膜系的截止度。
在示例性实施方式中，主膜系52的厚度d f1满足：d f1＜7μm；所述辅膜系的厚度d f2满足：d f2＜8μm。
在示例性实施方式中，基底51的线膨胀系数α满足：3×10 -6/℃＜α＜17×10 -6/℃，基底51的泊松比μ s满足：0.2＜μ s＜0.32，基底51的折射率温度系数为δ s＝(dn s/dt)/n s，其中dn s/dt满足-10*10-6/℃<dn s/dt<10*10-6/℃；
高折射率膜层的折射率n 1满足：3＜n 1，高折射率膜层的折射率温度系数为δ 1＝(dn 1/dt)/n 1，其中dn 1/dt满足-15*10-6/℃<dn 1/dt<15*10-6/℃；高折射率膜层的线膨胀系数β 1满足：1×10 -6/℃＜β 1＜15×10 -6/℃，高折射率膜层的泊松比μ 1满足：0.1＜μ 1＜0.5；
第一低折射率膜层的线膨胀系数β 2满足：β 2＜13×10 -7/℃，第一低折射率膜层的泊松比μ 2满足：0.1＜μ 2＜0.5，第一低折射率膜层的折射率温度系数为：δ 2＝(dn 2/dt)/n 2，其中dn 2/dt满足-5*10-6/℃<dn 2/dt<5*10-6/℃；
如此设置后，主膜系52的线膨胀系数β为：β＝z 1β 1+z 2β 2，其中，0＜z 1＜1，0＜z 2＜1。z 1为高折射率膜层的权重系数，z 2为第一低折射率膜层的权重系数。示例性的，z 1等于全部高折射率膜层的厚度之和与主膜系52的厚度的比值，且z 1+z 2＝1。
δ是等效相位，其满足关系式：δ＝(vδ 1+(1-v)δ 2)，μ是等效泊松比满足关系式：μ＝(vμ 1+(1-v)μ 2)。
主膜系52的等效折射率n为：
Figure PCTCN2019130575-appb-000005
m为滤光片干涉级次，0＜m。由于n 2＜n 1，可知：0＜n＜n 1。具体地，1＜m＜15。
主膜系52的膜层聚集密度P o满足：0.9＜P 0＜1.6。
本申请实施例提供的近红外带通滤光片的通带的中心波长λ c随温度T的变化而变化，λ c的温漂Δλ c/ΔT满足：
Figure PCTCN2019130575-appb-000006
其中，A＝2(α-β)(1-3μ)/(1-μ)，B＝2μ(α-β)/(1-μ)，n c为该主膜系52在初始温度T 0下的等效折射率，d c为该主膜系52在初始温度T 0下的物理厚度。n T为该主膜系52在待测温度T t下的等效折射率，d T为该主膜系52在待测温度T t下的物理厚度。
可以计算得到Δλ c/ΔT满足：Δλ c/ΔT＜0.15nm/℃。
在一种具体地实施方式中公开了一种近红外带通滤光片5，该近红外带通滤光片5的基底51的材料为玻璃，更具体地，可以采用肖特(shott)的D263T，-30℃至70℃范围内，基底51的线膨胀系数α为7.2×10 -6/℃，泊松比μ s为0.208。该近红外带通滤光片5的主膜系52如表5所示：
表5：一种主膜系的预设堆叠结构(厚度单位：nm)
Figure PCTCN2019130575-appb-000007
该主膜系52中的第一层为最靠近基底51的膜层，其它膜层按堆叠方向堆叠；奇数层为第一低折射率膜层，其折射率小于3，泊松比 μ 2为0.17；偶数层为高折射率膜层，泊松比μ 1为0.28。该主膜系52的膜层为溅射反应镀层，膜层聚集密度P 0为1.01，线膨胀系数β为3×10 -6/℃。
该近红外带通滤光片5的辅膜系53如表6所示：
表6：一种辅膜系的预设堆叠结构(厚度单位：nm)
Figure PCTCN2019130575-appb-000008
该辅膜系53的膜层为溅射反应膜层，第二低折射率膜层的材料为二氧化硅，第三低折射率膜层的材料为二氧化钛。
该近红外带通滤光片5的透过率曲线如图7和图8所示，图7示出了该近红外带通滤光片5对应0度角入射的光线时，通带的中心波长为865nm，对应30度角入射的光线时，通带的中心波长为858nm。图8示出了该近红外带通滤光片5在基准温度为0℃时，多个工作温度下的透过率曲线，通带的漂移量为：Δλ c/ΔT＝0.055nm/℃。
在一种具体地实施方式中公开了一种近红外带通滤光片5，该近 红外带通滤光片5的基底51的材料为玻璃，具体地，可以采用成都光明光电(CDGM)的H-ZPK5，-30℃至70℃范围内，基底51的线膨胀系数α为12.4×10 -6/℃，100℃至300℃范围内，基底51的线膨胀系数α为14.5×10 -6/℃，泊松比μ s为0.3。该近红外带通滤光片5的主膜系52如表7所示：
表7：一种主膜系的预设堆叠结构(厚度单位：nm)
Figure PCTCN2019130575-appb-000009
该主膜系52的膜层为溅射反应镀层，第一层最贴近基底51。该主膜系52的高折射率膜层的材料为Si:H，泊松比μ 1为0.28；第一低折射率膜层的材料为SiO 2，第四低折射率膜层的材料为Si 3N 4，泊松比μ 2为0.17；该主膜系52的结构形式为：H-(L 1-L 4-L 1-H) s-L 4，膜层聚集密度P 0为1.01，线膨胀系数β为3.5×10 -6/℃。
该近红外带通滤光片5的辅膜系53采用表6所示的预设堆叠结构，该辅膜系53的膜层为蒸发镀层。
当高折射率膜层的晶态结构为非晶态时，该近红外带通滤光片5的透过率曲线如图9和图10所示。图9示出了该近红外带通滤光片5 对应0度角入射的光线时，通带的中心波长为950.5nm，对应30度角入射的光线时，通带的中心波长为941.9nm。图10示出了该近红外带通滤光片5在基准温度为0℃时，多个工作温度下的透过率曲线，通带的漂移量为：Δλ c/ΔT＜0.055nm/℃。通带贴近短波的一侧(UV侧)透过率10％和90％陡度分别为6nm和10nm，漂移为8nm；通带贴近长波的一侧(IR侧)透过率10％和90％陡度为7nm和7nm，漂移为9.5nm。
示例性的，该近红外带通滤光片5的高折射率膜层的一部分的晶体结构为晶态，具体地可以是单晶、多晶或者微晶，这部分的体积占该高折射率膜层的体积的15％。该近红外带通滤光片5的透过率曲线如图11所示。图11示出了该近红外带通滤光片5在基准温度为0℃时，多个工作温度下的透过率曲线，通带的漂移量为：Δλ c/ΔT≤0.03nm/℃(大约为0.025nm/℃)，可见高折射率膜层中晶态结构的部分体积占比15％时，通带的漂移量更小。
在一种具体地实施方式中公开了一种近红外带通滤光片5，该近红外带通滤光片5的基底51的材料为玻璃。具体地，可以采用成都光明光电(CDGM)的H-ZPK7，-30℃至70℃范围内，基底51的线膨胀系数α为13.4×10 -6/℃，100℃至300℃范围内，基底51的线膨胀系数α为15.9×10 -6/℃，泊松比μ s为0.306。该近红外带通滤光片5的主膜系52如表8所示：
表8：一种主膜系的预设堆叠结构(厚度单位：nm)
Figure PCTCN2019130575-appb-000010
Figure PCTCN2019130575-appb-000011
该主膜系52的膜层为溅射反应镀层，第一层最贴近基底51。该主膜系52的高折射率膜层的材料为Ge:H，泊松比μ 1为0.22；第二低折射率膜层的材料为SiO 2，泊松比μ 2为0.17；该主膜系52的膜层聚集密度P 0为1.08，线膨胀系数β为2.7×10 -6/℃。
该近红外带通滤光片5的辅膜系53如表9所示：
表9：一种辅膜系的预设堆叠结构(厚度单位：nm)
Figure PCTCN2019130575-appb-000012
该辅膜系53的膜层为蒸发镀层。
该近红外带通滤光片5的透过率曲线如图12和图13所示。图12示出了该近红外带通滤光片5对应0度角入射的光线时，通带的中心 波长为946nm，对应30度角入射的光线时，通带的中心波长为937nm。图13示出了该近红外带通滤光片5在基准温度为0℃时，多个工作温度下的透过率曲线，通带的漂移量为：Δλ c/ΔT＜0.015nm/℃。
在一种具体地实施方式中公开了一种近红外带通滤光片5，该近红外带通滤光片5的基底51的材料为玻璃。具体地，可以采用成都光明光电(CDGM)的H-ZPK7，-30℃至70℃范围内，基底51的线膨胀系数α为13.4×10 -6/℃，100℃至300℃范围内，基底51的线膨胀系数α为15.9×10 -6/℃，泊松比μ s为0.306。该近红外带通滤光片5的主膜系52如表10所示：
表10：一种主膜系的预设堆叠结构(厚度单位：nm)
Figure PCTCN2019130575-appb-000013
该主膜系52中的第一层为最靠近基底51的膜层；奇数层为第一低折射率膜层，泊松比μ 2为0.17；偶数层为高折射率膜层，泊松比μ 1为0.26。该主膜系52的膜层为溅射反应镀层，膜层聚集密度P 0为1.02，线膨胀系数β为2×10 -6/℃。
该近红外带通滤光片5的辅膜系53如表11所示：
表11：一种辅膜系的预设堆叠结构(厚度单位：nm)
Figure PCTCN2019130575-appb-000014
Figure PCTCN2019130575-appb-000015
该辅膜系53的膜层为溅射反应镀层，奇数层为第二低折射率膜层，偶数层为高折射率膜层。
该近红外带通滤光片5的透过率曲线如图14和图15所示。图14示出了该近红外带通滤光片5对应0度角入射的光线时，通带的中心波长为950nm，对应30度角入射的光线时，通带的中心波长为942nm。图15示出了该近红外带通滤光片5在基准温度为0℃时，多个工作温度下的透过率曲线，通带的漂移量为：Δλ c/ΔT＜0.015nm/℃。
图2示出了根据本申请实施例的一种光学传感系统的使用状态示意图；参照图1、图2，光学传感系统包括近红外带通滤光片5和图像传感器6。在近红外窄带滤光片5的物侧还设置有第一镜头组件4，待测目标1发出或反射的光经过第一镜头组件4后到达近红外带通滤光片5，光线经过近红外带通滤光片5后形成的滤后光线到达图像传感器6，滤后光线触发图像传感器6形成图像信号。设置有本申请公开的红外带通滤光片5的光学传感系统，可以适用于至少-150℃至300℃，形成的图像质量稳定。
光学传感系统也可以为一种红外识别系统，包括红外线光源2(Infrared Radiation，IR光源)、第二镜头组件3、第一镜头组件4、近红外带通滤光片5和图像传感器6，其中图像传感器6为三维传感器。
以上描述仅为本申请的较佳实施方式以及对所运用技术原理的说明。本领域技术人员应当理解，本申请中所涉及的保护范围，并不限于上述技术特征的特定组合而成的技术方案，同时也应涵盖在不脱离所述技术构思的情况下，由上述技术特征或其等同特征进行任意组合而形成的其它技术方案。例如上述特征与本申请中公开的(但不限于)具有类似功能的技术特征进行互相替换而形成的技术方案。

Claims (19)

  1. 一种近红外带通滤光片，其特征在于，包括：基底、主膜系和辅膜系，所述主膜系位于所述基底的第一侧上，所述辅膜系位于所述基底的第二侧上，所述第二侧与所述第一侧相对；
    所述主膜系包括按第一预设堆叠结构设置的高折射率膜层和第一低折射率膜层；
    所述辅膜系包括按第二预设堆叠结构设置的第二低折射率膜层和第三低折射率膜层，所述第三低折射率膜层的折射率与所述第二低折射率膜层的折射率不同，或者，所述辅膜系包括按第二预设堆叠结构设置的所述高折射率膜层与所述第二低折射率膜层；
    在780nm至3000nm波长范围内，所述近红外带通滤光片具有至少一个通带，在温度从-150℃改变至300℃时，所述至少一个通带的中心波长的漂移量小于0.15nm/℃。
  2. 根据权利要求1所述的近红外带通滤光片，其特征在于，在温度从-30℃改变至85℃时，所述近红外带通滤光片的通带中心波长的漂移量小于0.09nm/℃。
  3. 根据权利要求1所述的近红外带通滤光片，其特征在于，对应780nm至3000nm波长范围内的任一波长，所述高折射率膜层的折射率均大于3。
  4. 根据权利要求3所述的近红外带通滤光片，其特征在于，所述高折射率膜层的消光系数小于0.01。
  5. 根据权利要求4所述的近红外带通滤光片，其特征在于，对应850nm波长处，所述高折射率膜层的折射率大于3.6，消光系数小于0.005。
  6. 根据权利要求1所述的近红外带通滤光片，其特征在于，所述主膜系的厚度d f1满足：d f1＜7μm；所述辅膜系的厚度d f2满足：d f2＜8μm。
  7. 根据权利要求1所述的近红外带通滤光片，其特征在于，所述高折射率膜层的一部分的晶体结构为晶态，另一部分的晶体结构为非晶态；
    所述晶体结构为晶态的部分的体积与所述高折射率膜层的体积之间的比率处于10％至20％以内。
  8. 根据权利要求1所述的近红外带通滤光片，其特征在于，所述高折射率膜层的材料包括氢化硅、氢化锗、掺硼氢化硅、掺硼氢化锗、掺氮氢化硅、掺氮氢化锗、掺磷氢化硅、掺磷氢化锗或Si xGe 1-x中的一种或多种的混合物，其中，0＜x＜1。
  9. 根据权利要求1所述的近红外带通滤光片，其特征在于，所述第一低折射率膜层的材料、所述第二低折射率膜层的材料及所述第三低折射率膜层的材料各自包括SiO 2、Si 3N 4、SiO pN q、Ta 2O 5、Nb 2O 5、TiO 2、Al 2O 3、SiCN、SiC的一种或多种的混合物，其中，
    q＝(4-2p)/3,0＜p＜1。
  10. 根据权利要求1所述的近红外带通滤光片，其特征在于，沿背离所述基底的方向，所述第一预设堆叠结构的形式为：(L 1-H) s-L 1，或者，(H-L 1) s；
    所述H代表所述高折射率膜层，所述L 1代表所述第一低折射率膜层，所述s代表括号内的结构形式重复的次数，s为大于等于1的整数。
  11. 根据权利要求1所述的近红外带通滤光片，其特征在于，所述主膜系还包括第四低折射率膜层，所述第一低折射率膜层的折射率不等于所述第四低折射率膜层的折射率。
  12. 根据权利要求11所述的近红外带通滤光片，其特征在于，沿背离所述基底的方向，所述第一预设堆叠结构的形式为：(L 1-L 4-L 1-H) s-L 1；(L 1-L 4-L 1-H) s-L 4；H-(L 1-L 4-L 1-H) s-L 1；或者H-(L 1-L 4-L 1-H) s-L 4；
    所述H代表所述高折射率膜层，所述L 1代表所述第一低折射率膜层，所述L 4代表所述第四低折射率膜层，所述s代表括号内的结构形式重复的次数，s为大于等于1的整数。
  13. 根据权利要求1所述的近红外带通滤光片，其特征在于，所述主膜系为窄带通膜系，所述辅膜系为宽带通膜系或长波通膜系。
  14. 根据权利要求13所述的近红外带通滤光片，其特征在于，对应780nm至3000nm的波长范围，所述窄带通膜系具有至少一个通带。
  15. 根据权利要求14所述的近红外带通滤光片，其特征在于，所述辅膜系为长波通膜系；
    对应350nm至3000nm的波长范围，所述长波通膜系具有至少一个通带和一个截止带，所述长波通膜系的通带覆盖所述窄带通膜系的通带。
  16. 根据权利要求14所述的近红外带通滤光片，其特征在于，所述辅膜系为宽带通膜系，所述宽带通膜系的通带覆盖所述窄带通膜系的通带；
    在小于所述宽带通膜系通带的最小波长的波长区域内，所述宽带通膜系的平均截止度大于所述窄带通膜系的截止度。
  17. 根据权利要求1所述的近红外带通滤光片，其特征在于，所述基底的材料的线膨胀系数在3*10 -6/℃至17*10 -6/℃之间。
  18. 根据权利要求1所述的近红外带通滤光片，其特征在于，所 述主膜系和所述辅膜系通过溅射反应设备或蒸发设备来生成。
  19. 一种光学传感系统，其特征在于，所述光学传感系统包括图像传感器和如权利要求1-18中的任一项所述的近红外带通滤光片，所述近红外带通滤光片设置于所述图像传感器的感光侧。
PCT/CN2019/130575 2019-06-05 2019-12-31 近红外带通滤光片及光学传感系统 Ceased WO2020244221A1 (zh)

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