WO2020253137A1 - 一种调制芯片、光发射模块 - Google Patents

一种调制芯片、光发射模块 Download PDF

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Publication number
WO2020253137A1
WO2020253137A1 PCT/CN2019/123004 CN2019123004W WO2020253137A1 WO 2020253137 A1 WO2020253137 A1 WO 2020253137A1 CN 2019123004 W CN2019123004 W CN 2019123004W WO 2020253137 A1 WO2020253137 A1 WO 2020253137A1
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Prior art keywords
optical signal
chip
type coupler
optical
wavelength
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Ceased
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PCT/CN2019/123004
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English (en)
French (fr)
Inventor
赵明璐
张冀
梁雪瑞
吴凡
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Accelink Technologies Co Ltd
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Accelink Technologies Co Ltd
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Priority to EP19934027.4A priority Critical patent/EP3988974B1/en
Publication of WO2020253137A1 publication Critical patent/WO2020253137A1/zh
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

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    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/015—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on semiconductor elements having potential barriers, e.g. having a PN or PIN junction
    • G02F1/025—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on semiconductor elements having potential barriers, e.g. having a PN or PIN junction in an optical waveguide structure
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/24—Coupling light guides
    • G02B6/26—Optical coupling means
    • G02B6/28—Optical coupling means having data bus means, i.e. plural waveguides interconnected and providing an inherently bidirectional system by mixing and splitting signals
    • G02B6/293—Optical coupling means having data bus means, i.e. plural waveguides interconnected and providing an inherently bidirectional system by mixing and splitting signals with wavelength selective means
    • G02B6/29379—Optical coupling means having data bus means, i.e. plural waveguides interconnected and providing an inherently bidirectional system by mixing and splitting signals with wavelength selective means characterised by the function or use of the complete device
    • G02B6/2938—Optical coupling means having data bus means, i.e. plural waveguides interconnected and providing an inherently bidirectional system by mixing and splitting signals with wavelength selective means characterised by the function or use of the complete device for multiplexing or demultiplexing, i.e. combining or separating wavelengths, e.g. 1xN, NxM
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/24—Coupling light guides
    • G02B6/42—Coupling light guides with opto-electronic elements
    • G02B6/4201—Packages, e.g. shape, construction, internal or external details
    • G02B6/4204—Packages, e.g. shape, construction, internal or external details the coupling comprising intermediate optical elements, e.g. lenses, holograms
    • G02B6/4215—Packages, e.g. shape, construction, internal or external details the coupling comprising intermediate optical elements, e.g. lenses, holograms the intermediate optical elements being wavelength selective optical elements, e.g. variable wavelength optical modules or wavelength lockers
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/24—Coupling light guides
    • G02B6/42—Coupling light guides with opto-electronic elements
    • G02B6/4201—Packages, e.g. shape, construction, internal or external details
    • G02B6/4266—Thermal aspects, temperature control or temperature monitoring
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/24—Coupling light guides
    • G02B6/42—Coupling light guides with opto-electronic elements
    • G02B6/4296—Coupling light guides with opto-electronic elements coupling with sources of high radiant energy, e.g. high power lasers, high temperature light sources
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
    • G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
    • G02B6/12007—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind forming wavelength selective elements, e.g. multiplexer, demultiplexer
    • G02B6/12009—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind forming wavelength selective elements, e.g. multiplexer, demultiplexer comprising arrayed waveguide grating [AWG] devices, i.e. with a phased array of waveguides
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/24—Coupling light guides
    • G02B6/26—Optical coupling means
    • G02B6/28—Optical coupling means having data bus means, i.e. plural waveguides interconnected and providing an inherently bidirectional system by mixing and splitting signals
    • G02B6/293—Optical coupling means having data bus means, i.e. plural waveguides interconnected and providing an inherently bidirectional system by mixing and splitting signals with wavelength selective means
    • G02B6/29346—Optical coupling means having data bus means, i.e. plural waveguides interconnected and providing an inherently bidirectional system by mixing and splitting signals with wavelength selective means operating by wave or beam interference

Definitions

  • the present disclosure relates to the field of optical communication optoelectronic devices, and in particular to a modulation chip and a light emitting module.
  • Silicon photonics integration technology combines microelectronics and optoelectronics to form silicon-based optoelectronic hybrid integrated chips and devices, so as to give play to the advantages of silicon-based microelectronics' advanced and mature process technology, high integration, and low cost. It has a broad market prospect .
  • silicon photonics technology is also an important key technology in low-cost optical transmitter modules.
  • the light emitting module needs to work at certain specific wavelengths, and the emitted light can be combined into the optical fiber for transmission.
  • the center wavelength of the demultiplexer made of silicon light will shift without temperature control; and the waveguide size of the demultiplexer is small.
  • the tolerance in coupling alignment is very low, resulting in the fabricated silicon light emitting module not being able to achieve the coupling alignment of the optical path well.
  • the embodiments of the present disclosure expect to provide a modulation chip and a light emitting module, which can improve the coupling efficiency of the optical path and effectively reduce the cost of the module.
  • the embodiment of the present disclosure provides a modulation chip, the chip includes: a wavelength splitter multiplexer and a silicon optical modulator, wherein;
  • the demultiplexer and multiplexer are used to receive a first optical signal, process the first optical signal to obtain a second optical signal containing at least one preset wavelength, and output the second optical signal;
  • the first optical signal is a light wave containing at least one wavelength;
  • the silicon optical modulator is configured to receive the second optical signal, perform frequency modulation on the second optical signal, and output a frequency-modulated second optical signal.
  • the split-wave multiplexer includes: at least one first-type coupler and at least one second-type coupler; the first-type coupler and the second-type coupler have the same number;
  • the first type coupler is configured to receive a first optical signal, and decompose the first optical signal into at least one optical signal of a preset wavelength;
  • the second type coupler is configured to receive the optical signal of the at least one preset wavelength, synthesize the optical signal of the at least one preset wavelength to obtain a second optical signal, and output the second optical signal signal.
  • the demultiplexer multiplexer further includes: an array waveguide;
  • the arrayed waveguide is located between the first type coupler and the second type coupler; it is used to transmit the optical signal of the at least one preset wavelength; wherein the first type coupler is coupled to the second type
  • the devices are mirror images of each other.
  • both the first type coupler and the second type coupler adopt a Rowland circle structure;
  • the Rowland circle structure includes at least two ports;
  • the first port of the two ports of the first type coupler or the second type coupler is connected to the input/output waveguide; the second port of the two ports of the first type coupler or the second type coupler Connected with the array waveguide; the input/output waveguide is used to transmit optical signals.
  • the chip further includes: a conductive component
  • the conductive component is located between the wavelength division multiplexer and the silicon optical modulator, and is used for coupling the second optical signal output by the wavelength division multiplexer into the silicon optical modulator.
  • the conductive component includes: at least one lens and/or at least one waveguide.
  • An embodiment of the present disclosure also provides a light emitting module, which includes the modulation chip described in any one of the above.
  • the light emitting module further includes: a laser chip, a temperature controller, and a substrate; wherein,
  • the laser chip and the modulation chip are both located on the upper surface of the substrate; the temperature controller is located on the lower surface of the substrate; and the laser chip is located on the first side of the modulation chip.
  • the laser chip is used to emit a first optical signal
  • the modulation chip is configured to receive the first optical signal and output a frequency-modulated second optical signal
  • the temperature controller is used to control the temperature of the laser chip and the silicon light modulator to keep the wavelength of the optical signal stable.
  • the light emitting module further includes: a collimating lens
  • the collimating lens is located on the second side of the modulation chip, and is used to receive a frequency-modulated second optical signal, and convert the frequency-modulated second optical signal into collimated light for output; One side is different from the second side.
  • the light emitting module further includes: at least one converging lens;
  • the converging lens is located between the laser chip and the modulation chip, and is used to couple the first optical signal emitted by the laser chip into the modulation chip.
  • the modulation chip and the optical emission module provided by the embodiments of the present disclosure are composed of a wavelength splitter multiplexer and a silicon optical modulator to form the modulation chip, and process the received first optical signal to obtain at least one preset wavelength The second optical signal; frequency modulates the second optical signal, and outputs the modulated second optical signal.
  • the chip can realize the output of the optical signal with the preset wavelength and the preset frequency, so that only a single broad-spectrum laser chip can be used in the high-speed optical transmitter module, which not only reduces the cost of using multiple high-speed laser chips, but also The inconsistency that may be caused by the spatial coupling of multiple lasers is reduced, and the optical coupling efficiency is effectively improved.
  • FIG. 1 is a schematic diagram of the composition structure of a modulation chip provided by an embodiment of the disclosure
  • FIG. 2 is a schematic diagram of a structure of the demultiplexer provided by an embodiment of the disclosure.
  • Figure 3 is a schematic diagram of the structure of the first type of coupler
  • Figure 4 is a schematic diagram of the structure of the second type of coupler
  • FIG. 5 is a schematic structural diagram of a light emitting module provided by an embodiment of the disclosure.
  • FIG. 6 is a schematic diagram of another structure of a light emitting module provided by an embodiment of the disclosure.
  • FIG. 7 is a side view of an implementation manner of a light emitting module provided by an embodiment of the disclosure.
  • FIG. 8 is a side view of another implementation of the light emitting module provided by the embodiment of the disclosure.
  • FIG. 1 is a schematic diagram of the composition structure of the modulation chip provided by the embodiment of the disclosure.
  • the modulation chip 100 includes: a wavelength demultiplexer 101 and a silicon optical modulator 102, of which;
  • the demultiplexer 101 is configured to receive a first optical signal, process the first optical signal to obtain a second optical signal containing at least one preset wavelength, and output the second optical signal;
  • the first optical signal is a light wave including at least one wavelength;
  • the silicon optical modulator 102 is configured to receive the second optical signal, perform frequency modulation on the second optical signal, and output a frequency-modulated second optical signal.
  • the modulation chip may be configured to be composed of a wavelength demultiplexer and a silicon optical modulator.
  • the first optical signal is emitted by a light source, has a continuous spectrum, and contains light waves of multiple wavelengths.
  • the light source includes: a semiconductor laser, a light emitting diode, and the like.
  • a semiconductor laser is a laser that uses semiconductor materials as its working substance, and is a device that generates laser light.
  • Light-emitting diodes are semiconductor electronic components that can convert electrical energy into light energy. It should be noted that semiconductor lasers are mainly used as light sources in high-speed, large-capacity optical fiber communication systems.
  • the light source is a semiconductor laser as an example for detailed description.
  • the light source may be any other light source containing multiple wavelengths, that is, the first optical signal is any light wave containing multiple wavelengths.
  • the first optical signal received by the aforementioned demultiplexer is the first optical signal emitted by the semiconductor laser.
  • the preset wavelength refers to a desired wavelength.
  • the second optical signal is an optical signal containing at least one wavelength that is expected to be acquired.
  • the second optical signal and the first optical signal include the same wavelength portion.
  • the first optical signal consists of red light, yellow light, blue light, and green light; when it is expected to obtain 760-622nm (red light wavelength), 597-577nm (blue light wavelength), 435-390nm (violet light wavelength)
  • a second optical signal containing red light can be obtained, or a second optical signal containing blue light can be obtained, or both red light and blue light can be obtained.
  • the second light signal is processed by the demultiplexer.
  • optical signals of several wavelengths may be combined into one optical signal for transmission, that is, the second optical signal may be one optical signal containing at least one preset wavelength.
  • the above-mentioned modulation chip can be used in a light emitting module, and the light emitting module can emit light in a preset state through processing of the modulation chip; the preset state includes: a preset wavelength and a preset frequency.
  • the modulation chip After the modulation chip receives the optical signal, it outputs the optical signal as several paths of optical signals with preset wavelengths, and then combines these several paths of optical signals with preset wavelengths into one optical signal, and responds to the One optical signal is frequency modulated, and the modulated optical signal is output.
  • the optical signal of the preset wavelength refers to an optical signal of a specific wavelength that is desired to be acquired.
  • the specific wavelength may be: ultraviolet light wavelength, infrared light wavelength, blue light wavelength, red light wavelength, etc.; the blue light, red light, etc. belong to visible light, and the wavelength is approximately 400-760 nm.
  • the wavelength of laser light is the same as that of ordinary light, ranging from infrared to ultraviolet.
  • the wavelength of the laser is on the order of several thousand nanometers or less. The shorter the laser wavelength is toward the ultraviolet region, it can reach several hundred nanometers or even smaller.
  • the demultiplexer After the demultiplexer receives the optical signal, it processes the optical signal into an optical signal containing at least one preset wavelength and outputs it to the silicon optical modulator; after the silicon optical modulator receives the optical signal , Perform frequency modulation on the one optical signal, and output a frequency-modulated optical signal.
  • the modulation chip is used for a light emitting module, and especially can be applied to a multi-channel silicon light high speed emitting module.
  • the above-mentioned frequency modulation of the optical signal is to modulate the optical signal into a signal of a specific frequency.
  • the frequency modulation can be implemented by adding a radio frequency modulation signal, and loading the radio frequency modulation signal on the light wave through a silicon optical modulation waveguide, so as to realize the modulation of the optical signal.
  • the demultiplexer and the silicon optical modulator can be integrated on the same ceramic substrate to reduce light
  • the possible attenuation caused by signal transmission in the air reduces the coupling cost.
  • the demultiplexer and multiplexer may be a device for demultiplexing and multiplexing, including: at least one first type coupler and at least one second type coupler;
  • the first type of couplers have the same number as the second type of couplers;
  • the first type coupler is configured to receive a first optical signal, and decompose the first optical signal into at least one optical signal of a preset wavelength;
  • the second type coupler is configured to receive the at least one optical signal with a preset wavelength, combine the optical signals with the at least one preset wavelength to obtain a second optical signal, and output the second optical signal signal.
  • the demultiplexing refers to separating light waves of various wavelengths; the multiplexing refers to combining two or more light wave signals of different wavelengths and coupling them to the same waveguide of the optical circuit.
  • the demultiplexer further includes: an arrayed waveguide; the arrayed waveguide is located at Between the first-type coupler and the second-type coupler; used to transmit the optical signal of the at least one preset wavelength.
  • FIG 2 is a schematic diagram of a structure of the demultiplexer provided by an embodiment of the disclosure; as shown in Figure 2, the demultiplexer is mainly composed of three parts, namely input waveguide 3-1 / output waveguide 3 -4. Arrayed waveguide 3-3, at least one coupler 3-2. The input waveguide/output waveguide and the array waveguide are all waveguides for transmitting optical signals.
  • couplers 3-2-1, 3-2-2, 3-2-3, 3-2-4 there are four couplers 3-2-1, 3-2-2, 3-2-3, 3-2-4; among them, the couplers 3-2-1, 3- 2-3 is the first type coupler, and the couplers 3-2-2 and 3-2-4 are the second type couplers. There are three arrayed waveguides 3-3-1, 3-3-2, 3-3-3. The first type coupler and the second type coupler are in a mirror image relationship.
  • one end of the input waveguide 3-1 is connected to one side of the first type coupler 3-2-1, and the other side of the first type coupler 3-2-1 is connected to the array One end of the waveguide 3-3-1 is connected; the other end of the arrayed waveguide 3-3-1 is connected to one side of the second type coupler 3-2-2.
  • the other side of the second type coupler 3-2-2 is connected to one end of the arrayed waveguide 3-3-2, and the other end of the arrayed waveguide 3-3-2 is connected to the first type coupler 3-2-3.
  • One side of the first type coupler 3-2-3 is connected to one end of the arrayed waveguide 3-3-3, and the other end of the arrayed waveguide 3-3-3 is connected to the second One side of the type coupler 3-2-4 is connected, and the other side of the second type coupler 3-2-4 is connected to one end of the output waveguide 3-4.
  • the number of couplers included in the split-wave multiplexer can be set as required, for example, it can include only one first-type coupler, one second-type coupler, or It contains multiple first-type couplers and multiple second-type couplers, and the number of first-type couplers and second-type couplers can be set the same.
  • multiple first-type couplers and second-type couplers can be provided to select optical signals of desired wavelengths.
  • FIG. 3 is a schematic diagram of the structure of the first type of coupler, and the coupler may adopt a Rowland circle structure.
  • the Rowland circle structure includes at least two ports, the first port of the two ports is connected to the input/output waveguide; the second port of the two ports is connected to the arrayed waveguide ; The input/output waveguide is used to transmit the optical signal.
  • the number of waveguides of the arrayed waveguide should be set to be greater than the number of waveguides of the input waveguide. In practical applications, setting the number of waveguides can achieve selective output of optical signals of different lengths.
  • FIG. 4 is a schematic structural diagram of the second type coupler.
  • the first port of the two ports of the second type coupler is connected to the output waveguide;
  • the two ports are connected with the array waveguide.
  • the light emitted from the waveguide C undergoes reflection-type diffraction at the output end O point of the arrayed waveguide, and optical signals of different wavelengths are diffracted to different angles ⁇ , and thus are received by different output waveguides.
  • the structure of the above-mentioned demultiplexer can be described as: the ports of the input waveguide 3-1/output waveguide 3-4 are located on the circumference of the Rowland circle, and the output arrayed waveguide 3-3-1 is located at the input waveguide 3-1
  • the port is the center of the circle and the diameter of the Rowland circle is the radius of the circle.
  • the arrayed waveguide 3-3 corresponds to a transmissive grating.
  • Broad-spectrum optical signals containing multiple wavelengths enter the input waveguide 3-1, and after entering the Rowland circle, equal power distribution is performed at the edge of the Rowland circle, and equal phase coupling enters the end face of the array waveguide 3-3-1.
  • the output optical signals of a certain wavelength of the adjacent arrayed waveguides have the same phase difference at the output port of the arrayed waveguide.
  • the optical signals of different wavelengths have different phase differences, so the optical signals of different wavelengths interfere in the output Rowland circle and focus on different output arrayed waveguides 3-3-2, that is, the light in different arrayed waveguides 3-3-2.
  • the wavelength of the signal is different. Based on this, the spectral decomposition and selection of light waves can be realized.
  • the equal power is distributed at the edge of the Rowland circle, and the phase is coupled into the end face of the arrayed waveguide 3-3-3 through the arrayed waveguide 3.
  • -3-3 is transmitted, it enters the Roland circle to achieve multiplexing, and merges into a single output waveguide 3-4.
  • the output of the optical signal of the preset wavelength can be realized.
  • the optical signal of the preset wavelength is output through the output waveguide, it needs to enter the silicon optical modulator for frequency modulation, and after frequency modulation, a high-speed optical signal is obtained and then output.
  • the modulation chip may further include: a conductive component; the conductive component is located between the wavelength splitter multiplexer and the silicon optical modulator, and is used to output the second wavelength splitter multiplexer The optical signal is coupled into the silicon optical modulator; the conductive component includes: at least one lens and/or at least one waveguide.
  • the optical path coupling mode of the demultiplexer and silicon optical modulator can be:
  • the optical path coupling is performed by arranging at least one waveguide or at least one lens between the demultiplexer and the silicon optical modulator.
  • the optical path coupling is to couple the optical signal into the optical device.
  • a waveguide can be provided between the wavelength splitter multiplexer and the silicon optical modulator, and the optical path coupling can be realized by means of waveguide mode field adaptation; it can also be between the wavelength splitter multiplexer and the silicon optical modulator.
  • a lens is provided, and the optical path coupling is realized through the refraction of the lens.
  • the modulation chip processes the incident first optical signal into a second optical signal containing at least one preset wavelength through a wavelength splitter and multiplexer, thereby realizing the selection of optical signals of specific wavelengths. After the optical signal of a specific wavelength is selected, the optical signal of the preset wavelength is coupled into the silicon optical modulator for frequency modulation by setting a waveguide or lens, so that the optical signal of the preset wavelength and frequency can be realized Output.
  • the embodiment of the present disclosure also provides a light emitting module implemented based on the above modulation chip.
  • the light emitting module includes the above modulation chip.
  • the composition structure and functional principle of the modulation chip are shown in the figure. The structures or principles described in 1-4 are the same.
  • FIG. 5 is a schematic structural diagram of a light emitting module provided by an embodiment of the present disclosure. As shown in FIG. 5, the light emitting module of an embodiment of the present disclosure further includes a laser chip 501.
  • the light emitting module includes: a laser chip 501 and a modulation chip 502; the laser chip 501 is located on the first side of the modulation chip 502;
  • the laser chip 501 is used to emit a first optical signal
  • the modulation chip 502 is configured to receive the first optical signal and output a frequency-modulated second optical signal; the modulation chip 502 includes: a demultiplexer 5021 and a silicon optical modulator 5022.
  • the demultiplexer 5021 and the silicon optical modulator 5022 are the demultiplexers and silicon optical modulators in the foregoing embodiment.
  • the laser chip converts a high-speed electrical signal into a high-speed optical signal and outputs it.
  • the laser chip may be a broad-spectrum laser chip; in the above-mentioned optical emission module, after the high-speed optical signal is emitted by the laser chip, Into the modulation chip, after the wave selection processing and frequency modulation processing of the modulation chip, an optical signal with a preset wavelength and a preset frequency is output.
  • the light emitting module provided in the embodiment of the present disclosure may further include: a collimating lens 503;
  • the collimating lens 503 is located on the second side of the modulation chip 502, and is used to receive the frequency-modulated second optical signal, and convert the frequency-modulated second optical signal into collimated light for output.
  • the first side is different from the second side.
  • the modulation chip 502 is located between the laser chip 501 and the collimating lens 503.
  • the laser chip 501 converts a high-speed electrical signal into a high-speed optical signal and then outputs it.
  • the high-speed optical signal is sent by the laser chip 501 and then enters the modulation chip 502, and passes through the modulation chip 502.
  • the optical signal of the preset wavelength and the preset frequency is output, and the optical signal of the preset wavelength and the preset frequency enters the collimating lens 503 to become collimated light output.
  • the light emitting module provided by the embodiment of the present disclosure further includes: Temperature controller; The temperature controller is used to control the temperature of the laser chip and the silicon optical modulator to keep the wavelength of the optical signal stable.
  • the light emitting module provided by the embodiments of the present disclosure may be implemented based on a hybrid integrated circuit, and further includes: a substrate; the above-mentioned chips, integrated circuits, or micro components are mixed and assembled on the substrate, and then externally packaged;
  • the substrate may be a ceramic substrate.
  • the laser chip and the modulation chip can be integrated on the same substrate, and the temperature controller is located on the lower surface of the substrate; the laser chip and the modulation chip are both located on the upper surface of the substrate .
  • the temperature controller can be arranged under the laser chip and the modulation chip to control the temperature to ensure the accuracy of the wavelength.
  • a temperature controller can be set under the substrate of the laser chip, and a temperature controller can be set under the substrate of the silicon light modulator; or a temperature controller can be set to control the temperature of the laser chip and the modulation chip together.
  • the light emitting module further includes: at least one converging lens; any one of the at least one converging lens is located between the laser chip and the modulation chip and is used to connect The first optical signal emitted by the laser chip is coupled into the modulation chip.
  • both the laser chip and the split-wave multiplex modulation chip can be in the form of passive patches. Such a design can simplify the coupling manufacturing cost of the optical path.
  • the materials of the above-mentioned converging lens, collimating lens, etc., and the multi-faceted deflection prism may be glass, crystal, etc., and the materials used are not limited in the embodiments of the present disclosure.
  • FIG. 7 is a side view of an implementation of the light emitting module provided by the embodiment of the disclosure; as shown in FIG. 7, the laser chip 1, the wave splitter combiner 3, and the silicon optical modulator are bonded by a non-edge patch method 4 is bonded to the same substrate 6.
  • a temperature controller is provided below the laser chip 1 and the silicon light modulator 4.
  • the laser chip 1 and the demultiplexer 3 are optically coupled through the lens 2.
  • a lens 7 can also be arranged between the demultiplexer 3 and the silicon light modulator 4, and the optical path coupling is performed through the lens 7. After the silicon light modulator 4 sends out the frequency-modulated second optical signal, the frequency-modulated second optical signal can be converted into a collimated light output through the collimating lens 5.
  • the optical path transmitted between the split-wave multiplexer 3 and the silicon optical modulator 4 can be coupled by lens coupling to achieve the best coupling efficiency.
  • the demultiplexer 3 can be designed with different functions according to different requirements. For example, it can be designed as a demultiplexer 3 with a wide temperature range, that is, it can output multiple optical signals of specific wavelengths constantly without a temperature controller. It can also be designed as a demultiplexer 3 with temperature control. Under different temperature control conditions, it can output multiple optical signals of different wavelengths with specific wavelengths, so that switching between different temperatures and different bands can be realized on the same module.
  • FIG. 8 is a side view of another implementation of the light emitting module provided by the embodiment of the disclosure; as shown in FIG. 8, the laser chip 1, the wavelength splitter combiner 3 and the silicon light modulation are performed by a non-edge patch method.
  • the device 4 is adhered to the same substrate 6; the demultiplexer 3 and the silicon optical modulator 4 are integrated into one body, and the component wave multiplexer modulation chip is coupled through the waveguide 8. At this time, it is only necessary to bond the laser chip 1 and the wave splitting, multiplexing and modulation chip to the same substrate.
  • the silicon light modulator 4 sends out the frequency-modulated second optical signal
  • the frequency-modulated second optical signal can be converted into a collimated light output through the collimating lens 5.
  • the laser chip 1 and the demultiplexer 3 can be optically coupled through the lens 2.
  • the demultiplexer 3 and the silicon optical modulator 4 are of the same silicon-based substrate material, the two devices can be optically coupled in a hybrid monolithic integration manner.
  • the demultiplexer 3 and the silicon optical modulator 4 are separately fabricated on the same silicon substrate. Then, the mode field matching area is made by a waveguide coupling structure or a mixed-doped structure between the two, so that the optical path coupling efficiency of the demultiplexer 3 and the silicon optical modulator 4 can reach the best value.
  • the silicon optical modulator 4 is a temperature sensitive device, in this solution, a temperature controller is required under the substrate to control the temperature of the laser chip 1 and the demultiplexing and multiplexing modulation chip together to ensure the accuracy of the wavelength.
  • the split-wave multiplexer modulation chip is an integrated structure of the split-wave multiplexer 3 and the silicon optical modulator 4.
  • a laser chip and a modulation chip are arranged on the same substrate, and an optical signal with a continuous spectrum is emitted through the laser chip, and the optical signal is coupled into the modulation chip for processing.
  • the output of an optical signal with a specific wavelength and a specific frequency is then transformed into collimated light by a collimating lens for emission.

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Abstract

本公开实施例公开了一种调制芯片，所述芯片包括：分波合波器、硅光调制器，其中；所述分波合波器，用于接收第一光信号，对所述第一光信号进行处理，得到包含至少一种预设波长的第二光信号，输出所述第二光信号；所述第一光信号为包含至少一种波长的光波；所述硅光调制器，用于接收所述第二光信号，对所述第二光信号进行频率调制，输出频率调制后的第二光信号。

Description

一种调制芯片、光发射模块
相关申请的交叉引用
本申请基于申请号为201910544499.5、申请日为2019年06月21日的中国专利申请提出，并要求该中国专利申请的优先权，该中国专利申请的全部内容在此引入本申请作为参考。
技术领域
本公开涉及光通信光电子器件领域，尤其涉及一种调制芯片及光发射模块。
背景技术
硅光子集成技术将微电子和光电子结合起来，构成硅基光电混合集成芯片和器件，以此发挥硅基微电子先进成熟的工艺技术、高度集成化、低成本等的优势，具有广泛的市场前景。
作为一种应用，在低成本光发射模块中，硅光技术同样是一个重要的关键技术。通常来说，光发射模块需要工作在某些特定的波长，并且需要发射的光线能合波进入光纤中进行传输。但是，目前由于硅的折射率对温度非常敏感，以硅光制作的分波合波器的中心波长在没有温控的情况下会发生偏移；且分波合波器的波导尺寸小，在耦合对准中容忍度很低，导致制作的硅光发射模块不能很好地实现光路的耦合对准。
发明内容
有鉴于此，本公开实施例期望提供一种调制芯片及光发射模块，能够提高光路耦合效率，有效降低模块成本。
为达到上述目的，本公开实施例的技术方案是这样实现的：
本公开实施例提供一种调制芯片，所述芯片包括：分波合波器、硅光调制器，其中；
所述分波合波器，用于接收第一光信号，对所述第一光信号进行处理，得到包含至少一种预设波长的第二光信号，输出所述第二光信号；所述第一光信号为包含至少一种波长的光波；
所述硅光调制器，用于接收所述第二光信号，对所述第二光信号进行频率调制，输出频率调制后的第二光信号。
优选地，所述分波合波器包括：至少一个第一类耦合器、至少一个第二类耦合器；所述第一类耦合器与第二类耦合器具有相同的数量；
所述第一类耦合器，用于接收第一光信号，将所述第一光信号分解为至少一种预设波长的光信号；
所述第二类耦合器，用于接收所述至少一种预设波长的光信号，对所述至少一种预设波长的光信号进行合成，得到第二光信号，输出所述第二光信号。
优选地，所述分波合波器还包括：阵列波导；
所述阵列波导位于第一类耦合器、第二类耦合器之间；用于传输所述至少一种预设波长的光信号；其中，所述第一类耦合器与所述第二类耦合器互为镜像。
优选地，所述第一类耦合器、第二类耦合器均采用罗兰圆结构；所述罗兰圆结构至少包括两个端口；
所述第一类耦合器或第二类耦合器的两个端口中第一端口与输入/输出波导相连接；所述第一类耦合器或第二类耦合器的两个端口中第二端口与所述阵列波导相连接；所述输入/输出波导，用于传输光信号。
优选地，所述芯片还包括：传导部件；
所述传导部件位于所述分波合波器、硅光调制器之间，用于将所述分波合波器输出的第二光信号耦合进入所述硅光调制器中。
优选地，所述传导部件包括：至少一个透镜和/或至少一个波导。
本公开实施例还提供一种光发射模块，所述光发射模块包括上述任一项所述的调制芯片。
优选地，所述光发射模块还包括：激光器芯片、温度控制器以及衬底；其 中，
所述激光器芯片、调制芯片均位于所述衬底的上表面；所述温度控制器位于所述衬底的下表面；所述激光器芯片位于所述调制芯片的第一侧。
优选地，所述激光器芯片，用于发射第一光信号；
所述调制芯片，用于接收所述第一光信号，输出频率调制后的第二光信号；
所述温度控制器，用于控制所述激光器芯片、硅光调制器的温度，以使光信号的波长保持稳定。
优选地，所述光发射模块还包括：准直透镜；
所述准直透镜，位于所述调制芯片的第二侧，用于接收频率调制后的第二光信号，将所述频率调制后的第二光信号变为准直光进行输出；所述第一侧与第二侧不同。
优选地，所述光发射模块还包括：至少一个汇聚透镜；
所述汇聚透镜位于所述激光器芯片与所述调制芯片之间，用于将所述激光器芯片发射的第一光信号耦合进入所述调制芯片中。
本公开实施例所提供的一种调制芯片及光发射模块，通过用分波合波器、硅光调制器构成调制芯片，对接收的第一光信号进行处理，得到包含至少一种预设波长的第二光信号；对所述第二光信号进行频率调制，输出调制后的第二光信号。如此，通过该芯片，可实现对预设波长、预设频率的光信号的输出，使得高速光发射模块中可以仅使用单个宽谱激光器芯片，既降低了使用多个高速激光器芯片的成本，也减少了多个激光器空间耦合可能造成的不一致性，有效地提高了光路耦合效率。
附图说明
图1为本公开实施例提供的调制芯片的组成结构示意图；
图2为本公开实施例提供的分波合波器的一种结构示意图；
图3为第一类耦合器的结构示意图；
图4为第二类耦合器的结构示意图；
图5为本公开实施例提供的光发射模块的一种结构示意图；
图6为本公开实施例提供的光发射模块的另一种结构示意图；
图7为本公开实施例提供的光发射模块的一种实施方式的侧视图；
图8为本公开实施例提供的光发射模块的另一种实施方式的侧视图。
具体实施方式
为使本公开实施例的目的、技术方案和优点更加清楚，下面将结合本公开实施例中的附图，对本公开实施例中的技术方案进行清楚、完整地描述，显然，所描述的实施例是本公开一部分实施例，而不是全部的实施例。
基于本公开中的实施例，本领域普通技术人员在没有做出创造性劳动前提下所获得的所有其他实施例，都属于本公开保护的范围。
本公开实施例提供一种调制芯片，图1为本公开实施例提供的调制芯片的组成结构示意图，如图1所示，所述调制芯片100包括：分波合波器101、硅光调制器102，其中；
所述分波合波器101，用于接收第一光信号，对所述第一光信号进行处理，得到包含至少一种预设波长的第二光信号，输出所述第二光信号；所述第一光信号为包含至少一种波长的光波；
所述硅光调制器102，用于接收所述第二光信号，对所述第二光信号进行频率调制，输出频率调制后的第二光信号。
这里，为了实现对期望获取的特定波长的光信号的输出，所述调制芯片可以设置为由分波合波器、硅光调制器构成。
所述第一光信号由光源发出，具有连续光谱，包含多种波长的光波。所述光源包括：半导体激光器、发光二极管等。半导体激光器是用半导体材料作为工作物质的激光器，是一种产生激光的器件。发光二极管是一种能将电能转化为光能的半导体电子元件。需要说明的是，在高速、大容量的光纤通信系统中主要采用半导体激光器作光源。
为了更好地说明本公开实施例中的调制芯片，这里，以光源为半导体激光 器为例进行详细说明。本领域技术人员应该理解，对于本公开实施例的技术方案而言，所述光源可以是其他的任意一种包含多种波长的光源，即第一光信号为包含多种波长的任意光波。
基于此，上述分波合波器接收的第一光信号即为半导体激光器发出的第一光信号。
这里，所述预设波长是指期望获取的波长。由此，所述第二光信号即为包含至少一种指期望获取的波长的光信号。
需要说明的是，所述第二光信号与第一光信号包含的波长部分相同。
作为一种示例，假设第一光信号由红光、黄光、蓝光、绿光组成；当期望得到760-622nm(红光波长)、597-577nm(蓝光波长)，435-390nm(紫光波长)时，通过所述分波合波器对第一光信号进行处理，可以得到包含红光的第二光信号，或者可以得到包含蓝光的第二光信号，还可以是得到同时包含红光、蓝光的第二光信号。
这里，为了在光纤或者其他介质中传输，可以将几种波长的光信号合为一路光信号进行传输，即，所述第二光信号可以为包含至少一种预设波长的一路光信号。
需要说明的是，上述调制芯片可以用于光发射模块中，通过调制芯片的处理，可以使光发射模块发出预设状态的光；所述预设状态包括：预设波长、预设频率。
作为一种示例，所述调制芯片在接收到光信号后，将光信号输出为几路预设波长的光信号，再将这几路预设波长的光信号合成一路光信号，并对所述一路光信号进行频率调制，输出调制后的一路光信号。
这里，所述预设波长的光信号是指期望获取的特定波长的光信号。所述特定波长可以是：紫外光波长、红外光波长、蓝光波长、红光波长等；所述蓝光、红光等属于可见光，波长大概在400～760nm之间。一般而言，激光的波长和普通光的波长一样，范围从红外线到紫外线都存在。激光的波长大约是几千纳米以下的量级，越往紫外光区靠拢的激光波长越短，可以到几百纳米甚至更小。
所述分波合波器接收到光信号后，将光信号处理成包含至少一种预设波长的一路光信号输出给硅光调制器；所述硅光调制器接收到所述一路光信号后，对所述一路光信号进行频率调制，输出频率调制后的一路光信号。
还需要说明的是，所述调制芯片用于光发射模块，特别是可以应用于多通道硅光高速发射模块。
这里，上述对光信号进行频率调制即为将光信号调制成特定频率的信号。所述频率调制可以通过外加射频调制信号，通过硅光调制波导将射频调制信号加载在光波上，实现对光信号的调制。
需要说明的是，为了使分波合波器发出的光信号可以无损地进入硅光调制器，可以将所述分波合波器、硅光调制器可以集成在同一陶瓷衬底上，减少光信号在空中传输可能造成的衰减，减少耦合成本。
为了实现光信号的分离、合成，所述分波合波器可以是一种分波、合波用的器件，包括：至少一个第一类耦合器、至少一个第二类耦合器；所述第一类耦合器与第二类耦合器具有相同的数量；
所述第一类耦合器，用于接收第一光信号，将所述第一光信号分解为至少一种预设波长的光信号；
所述第二类耦合器，用于接收所述至少一种预设波长的光信号，将所述至少一种预设波长的光信号进行合成，得到第二光信号，输出所述第二光信号。
所述分波即为将各种波长的光波分离；所述合波即为将两种及以上的不同波长的光波信号汇合在一起，并耦合到光线路的同一个波导中。
这里，为了实现经所述第一类耦合器分解而得到的不同波长的光信号能选择性地进入第二类耦合器，所述分波合波器还包括：阵列波导；所述阵列波导位于第一类耦合器、第二类耦合器之间；用于传输所述至少一种预设波长的光信号。
下面，对分波合波器的结构及工作原理作详细介绍：
图2为本公开实施例提供的分波合波器的一种结构示意图；如图2所示，所述分波合波器主要由三个部分组成，即输入波导3-1/输出波导3-4、阵列波导 3-3、至少一个耦合器3-2。所述输入波导/输出波导、阵列波导均是用于传输光信号的波导。
这里，在图2中，存在四个耦合器3-2-1、3-2-2、3-2-3、3-2-4；其中，所述耦合器3-2-1、3-2-3为第一类耦合器，所述耦合器3-2-2、3-2-4为第二类耦合器。存在三个阵列波导3-3-1、3-3-2、3-3-3。所述第一类耦合器与第二类耦合器为镜像关系。
如图2所示，所述输入波导3-1的一端与第一类耦合器3-2-1的一侧相连接，所述第一类耦合器3-2-1的另一侧与阵列波导3-3-1的一端相连接；所述阵列波导3-3-1的另一端与第二类耦合器3-2-2的一侧相连接。所述第二类耦合器3-2-2的另一侧与阵列波导3-3-2的一端相连接，阵列波导3-3-2的另一端与第一类耦合器3-2-3的一侧相连接，所述第一类耦合器3-2-3的另一侧与阵列波导3-3-3的一端相连接，所述阵列波导3-3-3的另一端与第二类耦合器3-2-4的一侧相连接，所述第二类耦合器3-2-4的另一侧与输出波导3-4的一端相连接。
需要说明的是，在实际应用中，所述分波合波器所包含的耦合器的数量可以根据需要设置，例如可以是只包含一个第一类耦合器、一个第二类耦合器，还可以是包含多个第一类耦合器、多个第二类耦合器，第一类耦合器和第二类耦合器的数量设置相同即可。当然，为了实现更精准的选波，可以设置多个第一类耦合器、第二类耦合器以达到对期望波长的光信号的选取。
图3为第一类耦合器的结构示意图，所述耦合器可以采用罗兰圆结构。如图3所示，所述罗兰圆结构至少包括两个端口，所述两个端口中第一端口与输入/输出波导相连接；所述两个端口中第二端口与所述阵列波导相连接；所述输入/输出波导，用于传输所述光信号。
这里，为了实现分波功能，所述阵列波导的波导数应该设置为大于输入波导的波导数。在实际应用中，对波导的数量进行设置即可实现对不同长度的光信号的选择性输出。
相对应的，图4为第二类耦合器的结构示意图，如图4所示，所述第二类耦合器的两个端口中第一端口与输出波导相连接；所述两个端口中第二端口与 所述阵列波导相连接。在图4中，从波导C发出的光，在阵列波导的输出端O点发生反射型衍射，不同波长的光信号被衍射到不同的角度θ，从而被不同的输出波导接收。
基于此，上述分波合波器的结构可以描述为：输入波导3-1/输出波导3-4的端口位于罗兰圆的圆周上，输出阵列波导3-3-1位于以输入波导3-1的端口为圆心、罗兰圆直径为半径的圆周上。
这里，阵列波导3-3相当于透射式光栅。含多个波长的宽谱光信号进入输入波导3-1，进入罗兰圆后在罗兰圆的边缘处进行等功率分配，并等相位耦合进入阵列波导3-3-1的端面。光信号进入阵列波导3-3-1后，由于相邻的阵列波导具有相同的长度差L，在阵列波导的输出口上相邻阵列波导的某一波长的输出光信号具有相同的相位差，对于不同波长的光信号相位差不同，于是不同波长的光信号在输出罗兰圆中发生干涉并聚焦到不同的输出阵列波导3-3-2上，即不同的阵列波导3-3-2内的光信号的波长不同。基于此，可以实现光波的光谱分解和选择。
相对应的，阵列波导3-3-2上传输的光进入罗兰圆后，在罗兰圆的边缘处进行等功率分配，并等相位耦合进入阵列波导3-3-3的端面，经阵列波导3-3-3传输后进入罗兰圆中实现合波，汇合进单一的输出波导3-4。由此，可以实现对预设波长的光信号的输出。
这里，所述预设波长的光信号经输出波导输出后，需要进入硅光调制器中进行频率调制，经过频率调制后得到高速光信号，进而输出。
实际应用中，为了使所述预设波长的光信号能直接与硅光调制器对准，或者说为了使所述预设波长的光信号能尽量无损的进入硅光调制器中，需要对分波合波器、硅光调制器进行光路耦合。为了实现光路耦合，所述调制芯片还可以包括：传导部件；所述传导部件位于所述分波合波器、硅光调制器之间，用于将所述分波合波器输出的第二光信号耦合进入所述硅光调制器中；所述传导部件包括：至少一个透镜和/或至少一个波导。
基于此，所述分波合波器、硅光调制器的光路耦合方式可以是：
通过在所述分波合波器、硅光调制器之间设置至少一个波导或者至少一个透镜进行光路耦合。所述光路耦合即为将光信号耦合进入光学器件中。
作为一种示例，可以在分波合波器、硅光调制器之间设置一个波导，通过波导模场适配的方式实现光路耦合；还可以在分波合波器、硅光调制器之间设置一个透镜，通过透镜的折射实现光路耦合。
本公开实施例所提供的调制芯片，通过分波合波器将入射的第一光信号处理成包含至少一种预设波长的第二光信号，由此实现对特定波长的光信号的选择，在经过特定波长的光信号的选择后，通过设置波导或者透镜的方式将预设波长的光信号耦合进入硅光调制器中进行频率调制，如此可以实现对预设波长、预设频率的光信号的输出。
基于前述实施例的调制芯片，本公开实施例还提供一种基于上述调制芯片所实现的光发射模块，所述光发射模块包括上述调制芯片，所述调制芯片的组成结构以及功能原理，与图1-4所述的结构或原理相同。
图5为本公开实施例提供的光发射模块的结构示意图，如图5所示，本公开实施例的光发射模块还包括：激光器芯片501。
具体地，所述光发射模块包括：激光器芯片501、调制芯片502；所述激光器芯片501位于所述调制芯片502的第一侧；
所述激光器芯片501，用于发射第一光信号；
所述调制芯片502，用于接收所述第一光信号，输出频率调制后的第二光信号；所述调制芯片502包括：分波合波器5021、硅光调制器5022。
这里，所述分波合波器5021、硅光调制器5022即为前述实施例中的分波合波器、硅光调制器。
需要说明的是，所述激光器芯片将高速电信号转换成高速光信号后输出，所述激光器芯片可以是宽谱激光器芯片；在上述光发射模块中，所述高速光信号经激光器芯片发出后，进入调制芯片中，经过调制芯片的选波处理、调频处理后，输出预设波长、预设频率的光信号。
可选的，如图6所示，为了输出准直光，本公开实施例提供的光发射模块 还可以包括：准直透镜503；
所述准直透镜503，位于所述调制芯片502的第二侧，用于接收频率调制后的第二光信号，将所述频率调制后的第二光信号变为准直光进行输出，所述第一侧与第二侧不同。
所述调制芯片502位于所述激光器芯片501与准直透镜503之间。
具体地，所述激光器芯片501将高速电信号转换成高速光信号后输出，在上述光发射模块中，所述高速光信号经激光器芯片501发出后，进入调制芯片502中，经过调制芯片502的选波处理、调频处理后，输出预设波长、预设频率的光信号，所述预设波长、预设频率的光信号进入准直透镜503中变为准直光输出。
这里，由于硅的折射率对温度非常敏感，合波分波器的中心波长在没有温控的情况下会发生偏移，为了波长的准确性，本公开实施例提供的光发射模块还包括：温度控制器；所述温度控制器，用于控制所述激光器芯片、硅光调制器的温度，以使光信号的波长保持稳定。
进一步地，本公开实施例提供的光发射模块可以是基于混合集成电路实现的，还包括：衬底；在所述衬底上将上述芯片、集成电路或微型元件混合组装，再外加封装；所述衬底可以是陶瓷衬底。
在实际应用中，所述激光器芯片与调制芯片可以集成在同一衬底上，所述温度控制器位于所述衬底的下表面；所述激光器芯片、调制芯片均位于所述衬底的上表面。所述温度控制器可以设置在激光器芯片、调制芯片的下方，对温度进行控制以保证波长的准确性。
具体地，可以在激光器芯片的衬底下方设置一个温度控制器，在硅光调制器的衬底下方设置一个温度控制器；还可以是设置一个温度控制器对激光器芯片、调制芯片一起进行温度控制。
为了更好的实现光路耦合，所述光发射模块还包括：至少一个汇聚透镜；所述至少一个汇聚透镜中的任一个汇聚透镜，位于所述激光器芯片与所述调制芯片之间，用于将所述激光器芯片发射的第一光信号耦合进入所述调制芯片。
需要说明的是，在模块制作工艺过程中，可以是激光器芯片、分波合波调制芯片均可采用无源贴片的形式，如此设计可以简化光路的耦合制作成本。
还需要说明的是，上述汇聚透镜、准直透镜等及多面偏折棱镜的材料可以是玻璃、水晶等，在本公开实施例对所用材料不作限定。
这里，本公开实施例中的相关设计参数也可根据不同需求进行优化。
为了更好的说明本公开实施例提供的光发射模块的结构，下面通过示例进行具体说明：
图7为本公开实施例提供的光发射模块的一种实施方式的侧视图；如图7所示，通过无缘贴片的方式，将激光器芯片1、分波合波器3及硅光调制器4粘接到同一个衬底6上。激光器芯片1和硅光调制器4下方设有温度控制器。激光器芯片1和分波合波器3之间通过透镜2进行光路耦合。分波合波器3和硅光调制器4之间也可以设置透镜7，通过透镜7进行光路耦合。硅光调制器4发出频率调制后的第二光信号后，可以通过准直透镜5将频率调制后的第二光信号变为准直光输出。
由于分波合波器3输出只有一路波导，可以通过透镜耦合的方式对分波合波器3和硅光调制器4之间传输的光路进行耦合，达到最佳耦合效率。
分波合波器3可以根据不同需求进行不同功能的设计。如可设计成宽温范围的分波合波器3，即不需要温度控制器即可恒定输出多路特定波长的光信号。也可设计成带温控的分波合波器3，在不同温度控制的情况下，输出不同波长的多路特定波长的光信号，如此可以在同一模块上，实现不同温度不同波段的切换。
图8为本公开实施例提供的光发射模块的另一种实施方式的侧视图；如图8所示，通过无缘贴片的方式，将激光器芯片1、分波合波器3及硅光调制器4粘接到同一个衬底6上；分波合波器3和硅光调制器4集成为一体，通过波导8耦合成分波合波调制芯片。此时只需将激光器芯片1、分波合波调制芯片粘接到同一个衬底上。硅光调制器4发出频率调制后的第二光信号后，可以通过准直透镜5将频率调制后的第二光信号变为准直光输出。
激光器芯片1和分波合波器3之间可以通过透镜2进行光路耦合。
这里，由于分波合波器3和硅光调制器4都是属于同种硅基衬底材质，可以通过混合单片集成的方式将两种器件进行光路耦合。
作为一种示例，在同一硅基片上分别制作分波合波器3和硅光调制器4。再在两者之间通过波导耦合的结构或者混合掺杂的结构制作模场匹配区域，使得分波合波器3和硅光调制器4的光路耦合效率能达到最佳值。
由于硅光调制器4为温度敏感器件，故此方案中，衬底下需有温度控制器，将激光器芯片1、分波合波调制芯片一起进行温度控制，以保证波长的准确性。这里，所述分波合波调制芯片即为分波合波器3和硅光调制器4的集成结构。
本公开实施例提供的光发射模块，通过在同一衬底上设置激光器芯片、调制芯片，通过激光器芯片发射出具有连续光谱的光信号，将所述光信号耦合进入调制芯片中进行处理，如此实现对特定波长、特定频率的一路光信号的输出，进而再经准直透镜变为准直光进行发射。通过这种设计方式，简化了光路的耦合方式，降低了光发射模块的制作成本，在光发射模块的设计及制作中有重要的应用前景。
以上所述，仅为本发明的具体实施方式，但本发明的保护范围并不局限于此，任何熟悉本技术领域的技术人员在本发明揭露的技术范围内，可轻易想到变化或替换，都应涵盖在本发明的保护范围之内。因此，本发明的保护范围应以所述权利要求的保护范围为准。应理解，说明书通篇中提到的“一个实施例”或“一实施例”意味着与实施例有关的特定特征、结构或特性包括在本发明的至少一个实施例中。
因此，在整个说明书各处出现的“在一个实施例中”或“在一实施例中”未必一定指相同的实施例。此外，这些特定的特征、结构或特性可以任意适合的方式结合在一个或多个实施例中。应理解，在本公开的各种实施例中，上述各过程的序号的大小并不意味着执行顺序的先后，各过程的执行顺序应以其功能和内在逻辑确定，而不应对本公开实施例的实施过程构成任何限定。上述本公开实施例序号仅仅为了描述，不代表实施例的优劣。
需要说明的是，在本文中，术语“包括”、“包含”或者其任何其他变体意在涵盖非排他性的包含，从而使得包括一系列要素的过程、方法、物品或者装置不仅包括那些要素，而且还包括没有明确列出的其他要素，或者是还包括为这种过程、方法、物品或者装置所固有的要素。在没有更多限制的情况下，由语句“包括一个……”限定的要素，并不排除在包括该要素的过程、方法、物品或者装置中还存在另外的相同要素。

Claims (11)

  1. 一种调制芯片，所述芯片包括：分波合波器、硅光调制器，其中；
    所述分波合波器，用于接收第一光信号，对所述第一光信号进行处理，得到包含至少一种预设波长的第二光信号，输出所述第二光信号；所述第一光信号为包含至少一种波长的光波；
    所述硅光调制器，用于接收所述第二光信号，对所述第二光信号进行频率调制，输出频率调制后的第二光信号。
  2. 根据权利要求1所述的芯片，其中；
    所述分波合波器包括：至少一个第一类耦合器、至少一个第二类耦合器；所述第一类耦合器与第二类耦合器具有相同的数量；
    所述第一类耦合器，用于接收第一光信号，将所述第一光信号分解为至少一种预设波长的光信号；
    所述第二类耦合器，用于接收所述至少一种预设波长的光信号，对所述至少一种预设波长的光信号进行合成，得到第二光信号，输出所述第二光信号。
  3. 根据权利要求1所述的芯片，其中，所述分波合波器还包括：阵列波导；
    所述阵列波导位于第一类耦合器、第二类耦合器之间，用于传输所述至少一种预设波长的光信号；其中，所述第一类耦合器与所述第二类耦合器互为镜像。
  4. 根据权利要求3所述的芯片，其中；
    所述第一类耦合器、第二类耦合器均采用罗兰圆结构；所述罗兰圆结构至少包括两个端口；
    所述第一类耦合器或第二类耦合器的两个端口中第一端口与输入/输出波导相连接；
    所述第一类耦合器或第二类耦合器的两个端口中第二端口与所述阵列波导相连接；
    所述输入/输出波导，用于传输光信号。
  5. 根据权利要求1所述的芯片，其中，所述芯片还包括：传导部件；
    所述传导部件位于所述分波合波器、硅光调制器之间，用于将所述分波合波器输出的第二光信号耦合进入所述硅光调制器中。
  6. 根据权利要求5所述的芯片，其中；
    所述传导部件包括：至少一个透镜和/或至少一个波导。
  7. 一种光发射模块，所述光发射模块包括权1-6任一项所述的调制芯片。
  8. 根据权利要求7所述的光发射模块，其中，所述光发射模块还包括：激光器芯片、温度控制器以及衬底；
    所述激光器芯片、调制芯片均位于所述衬底的上表面；
    所述温度控制器位于所述衬底的下表面；
    所述激光器芯片位于所述调制芯片的第一侧。
  9. 根据权利要求8所述的光发射模块，其中，
    所述激光器芯片，用于发射第一光信号；
    所述调制芯片，用于接收所述第一光信号，输出频率调制后的第二光信号；
    所述温度控制器，用于控制所述激光器芯片、硅光调制器的温度，以使光信号的波长保持稳定。
  10. 根据权利要求8-9任一项所述的光发射模块，其中，所述光发射模块还包括：准直透镜；
    所述准直透镜，位于所述调制芯片的第二侧，用于接收频率调制后的第二光信号，将所述频率调制后的第二光信号变为准直光进行输出；
    所述第一侧与第二侧不同。
  11. 根据权利要求8-9任一项所述的光发射模块，其中，所述光发射模块还包括：至少一个汇聚透镜；
    所述汇聚透镜位于所述激光器芯片与所述调制芯片之间，用于将所述激光器芯片发射的第一光信号耦合进入所述调制芯片中。
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