WO2021004127A1 - 体声波谐振器、滤波器及电子设备 - Google Patents

体声波谐振器、滤波器及电子设备 Download PDF

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Publication number
WO2021004127A1
WO2021004127A1 PCT/CN2020/086558 CN2020086558W WO2021004127A1 WO 2021004127 A1 WO2021004127 A1 WO 2021004127A1 CN 2020086558 W CN2020086558 W CN 2020086558W WO 2021004127 A1 WO2021004127 A1 WO 2021004127A1
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Prior art keywords
metal connection
connection layer
bottom electrode
electrode metal
top electrode
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PCT/CN2020/086558
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English (en)
French (fr)
Inventor
张孟伦
庞慰
杨清瑞
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Tianjin University
ROFS Microsystem Tianjin Co Ltd
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Tianjin University
ROFS Microsystem Tianjin Co Ltd
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Priority to EP20836329.1A priority Critical patent/EP3998704A4/en
Publication of WO2021004127A1 publication Critical patent/WO2021004127A1/zh
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    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic elements; Electromechanical resonators
    • H03H9/15—Constructional features of resonators consisting of piezoelectric or electrostrictive material
    • H03H9/17—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator
    • H03H9/171—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator implemented with thin-film techniques, i.e. of the film bulk acoustic resonator [FBAR] type
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic elements; Electromechanical resonators
    • H03H9/02—Details
    • H03H9/02007—Details of bulk acoustic wave devices
    • H03H9/02086—Means for compensation or elimination of undesirable effects
    • H03H9/02118—Means for compensation or elimination of undesirable effects of lateral leakage between adjacent resonators
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic elements; Electromechanical resonators
    • H03H9/02—Details
    • H03H9/02007—Details of bulk acoustic wave devices
    • H03H9/02015—Characteristics of piezoelectric layers, e.g. cutting angles
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic elements; Electromechanical resonators
    • H03H9/02—Details
    • H03H9/02007—Details of bulk acoustic wave devices
    • H03H9/02047—Treatment of substrates
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic elements; Electromechanical resonators
    • H03H9/02—Details
    • H03H9/02007—Details of bulk acoustic wave devices
    • H03H9/02086—Means for compensation or elimination of undesirable effects
    • H03H9/02102—Means for compensation or elimination of undesirable effects of temperature influence
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic elements; Electromechanical resonators
    • H03H9/02—Details
    • H03H9/02007—Details of bulk acoustic wave devices
    • H03H9/02086—Means for compensation or elimination of undesirable effects
    • H03H9/02125—Means for compensation or elimination of undesirable effects of parasitic elements
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic elements; Electromechanical resonators
    • H03H9/02—Details
    • H03H9/02007—Details of bulk acoustic wave devices
    • H03H9/02157—Dimensional parameters, e.g. ratio between two dimension parameters, length, width or thickness
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic elements; Electromechanical resonators
    • H03H9/02—Details
    • H03H9/125—Driving means, e.g. electrodes, coils
    • H03H9/13—Driving means, e.g. electrodes, coils for networks consisting of piezoelectric or electrostrictive materials
    • H03H9/132—Driving means, e.g. electrodes, coils for networks consisting of piezoelectric or electrostrictive materials characterized by a particular shape
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic elements; Electromechanical resonators
    • H03H9/15—Constructional features of resonators consisting of piezoelectric or electrostrictive material
    • H03H9/17—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator
    • H03H9/171—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator implemented with thin-film techniques, i.e. of the film bulk acoustic resonator [FBAR] type
    • H03H9/172—Means for mounting on a substrate, i.e. means constituting the material interface confining the waves to a volume
    • H03H9/173—Air-gaps
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic elements; Electromechanical resonators
    • H03H9/46—Filters
    • H03H9/54—Filters comprising resonators of piezoelectric or electrostrictive material

Definitions

  • the embodiments of the present invention relate to the field of semiconductors, and more particularly to a bulk acoustic wave resonator, a filter having the resonator, and an electronic device having the filter.
  • FBAR Film Bulk Acoustic Resonator
  • BAW Bulk Acoustic Wave Resonator
  • FIG. 1 The structure of the traditional film bulk acoustic resonator is shown in Figure 1.
  • 10 is the bottom electrode of the resonator, connected to the two sides b and c of the pentagon of the resonator; 11 is the piezoelectric layer of the resonator, and 12 is the top electrode of the resonator, connected to the pentagon of the resonator One side; 13, 14 is the metal connection layer located above the bottom electrode and the top electrode of the resonator.
  • the present invention is proposed.
  • the series resistance R s of the resonator is reduced by changing the connection mode of the electrodes of the resonator and the effective area.
  • a bulk acoustic wave resonator including:
  • the bottom electrode is arranged above the substrate and has a bottom electrode metal connection layer;
  • the top electrode is opposed to the bottom electrode and has a top electrode metal connection layer
  • the piezoelectric layer is arranged above the bottom electrode and between the bottom electrode and the top electrode,
  • the overlapping area of the acoustic mirror, the bottom electrode, the piezoelectric layer and the top electrode in the thickness direction of the resonator constitutes the effective area of the resonator;
  • the top electrode metal connection layer and the bottom electrode metal connection layer are arranged around 50% or more of the peripheral length of the effective area in total.
  • the bottom electrode metal connection layer is disposed around at least a part of the piezoelectric layer corresponding to the effective area.
  • the bottom electrode metal connection layer has a first part disposed on the bottom electrode and a second part covering a part of the upper surface of the piezoelectric layer, and the second part is spaced apart from the top electrode.
  • the first part is provided with a heat dissipation structure.
  • the second part and the top electrode are spaced apart from each other by a first distance.
  • the second part is located outside the edge of the acoustic mirror and is separated from the edge of the acoustic mirror by a second distance.
  • the top electrode metal connection layer and the bottom electrode metal connection layer are arranged around 90% or more of the peripheral length of the effective area in total.
  • the top electrode metal connection layer or the bottom electrode metal connection layer is disposed around 50% or more of the peripheral length of the effective area.
  • the width of the portion of the top electrode metal connection layer and/or the bottom electrode metal connection layer surrounding the effective area is in the range of 1-50 ⁇ m, further optionally, in the range of 5-10 ⁇ m .
  • the top electrode metal connection layer is arranged around at least a part of the effective area and is connected to the piezoelectric layer.
  • the top electrode metal connection layer is disposed around at least a part of the effective area and is connected to the top electrode.
  • the top electrode has a bridge structure surrounding at least a part of the effective area; and the top electrode metal connection layer surrounds at least a part of the bridge structure and is electrically connected to the bridge structure.
  • the top electrode metal connection layer is electrically connected to the outer edge of the bridge structure on the upper surface of the outer edge of the bridge structure.
  • the effective area is a polygon.
  • "at least one of the top electrode metal connection layer and the bottom electrode metal connection layer surrounds at least a part of the effective area” includes the top electrode metal connection layer and the bottom electrode metal connection layer One of them surrounds at least half of the edge of the effective area.
  • the polygon is a pentagon; “at least one of the top electrode metal connection layer and the bottom electrode metal connection layer surrounds at least a part of the effective area” includes the top electrode metal connection layer and One of the bottom electrode metal connection layers substantially surrounds at least three continuous sides of the polygon.
  • the top electrode metal connection layer is arranged around four sides of the pentagon, and the bottom electrode metal connection layer is arranged around the remaining one side of the pentagon; or the bottom electrode The metal connection layer is arranged around the four sides of the pentagon, and the top electrode metal connection layer is arranged around the remaining one side of the pentagon; or the bottom electrode metal connection layer is arranged around the pentagon And the top electrode metal connection layer is arranged around the other half of the edge of the pentagon.
  • the terminal of the top electrode and the terminal of the bottom electrode in the thickness direction of the resonator are separated from each other by a third distance.
  • the third distance is greater than 5 ⁇ m.
  • a bulk acoustic wave resonator including:
  • the bottom electrode is arranged above the substrate and has a bottom electrode metal connection layer;
  • the top electrode is opposed to the bottom electrode and has a top electrode metal connection layer
  • the piezoelectric layer is arranged above the bottom electrode and between the bottom electrode and the top electrode,
  • the overlapping area of the acoustic mirror, the bottom electrode, the piezoelectric layer and the top electrode in the thickness direction of the resonator constitutes the effective area of the resonator;
  • At least one of the top electrode metal connection layer and the bottom electrode metal connection layer has a basic connection part and a surrounding part, and the surrounding part surrounds at least one of the effective area from two sides or one side of the basic connection part. Part of the extension.
  • the surrounding portion altogether surrounds 50% or more of the peripheral length of the effective area.
  • the width of the surrounding portion is in the range of 1-50 ⁇ m. Further, the width of the surrounding portion is in the range of 5-10 ⁇ m.
  • a filter including the above-mentioned bulk acoustic wave resonator.
  • an electronic device including the above-mentioned filter or bulk acoustic wave resonator.
  • Fig. 1 is a schematic top view of a bulk acoustic wave resonator in the prior art
  • Fig. 2 is a schematic top view of a bulk acoustic wave resonator according to an exemplary embodiment of the present invention
  • Fig. 3 is an exemplary partial enlarged schematic diagram of part A in Fig. 2 according to an exemplary embodiment of the present invention
  • Fig. 4 is a schematic diagram taken along line B-B in Fig. 2 according to an exemplary embodiment of the present invention
  • Fig. 5 is a schematic diagram taken along line B-B in Fig. 2 according to another exemplary embodiment of the present invention.
  • Fig. 6 is a schematic view taken along line B-B in Fig. 2 according to still another exemplary embodiment of the present invention.
  • Fig. 7 is a schematic top view of a bulk acoustic wave resonator according to an exemplary embodiment of the present invention.
  • Fig. 8 is an exemplary partial enlarged schematic diagram of part C in Fig. 7 according to an exemplary embodiment of the present invention.
  • Fig. 9 is a schematic top view of a bulk acoustic wave resonator according to an exemplary embodiment of the present invention.
  • Fig. 10 is an exemplary partial enlarged schematic diagram of part D in Fig. 9 according to an exemplary embodiment of the present invention.
  • Fig. 11 is a schematic diagram taken along line B-B in Fig. 9 according to an exemplary embodiment of the present invention.
  • Fig. 12 is a schematic top view of a bulk acoustic wave resonator according to an exemplary embodiment of the present invention.
  • Fig. 2 is a schematic top view of a bulk acoustic wave resonator according to an exemplary embodiment of the present invention.
  • 10 is the bottom electrode of the resonator, which is connected to the four sides of the pentagon (effective area), 11 is the piezoelectric layer of the resonator; 12 is the top electrode of the resonator; 13 is the resonance
  • the bottom electrode metal connection layer above the bottom electrode of the device, and the width surrounding the edge of the effective area is d1 and d2.
  • the values of d1 and d2 can be equal or unequal, generally 1-50 ⁇ m, typically 5-10 ⁇ m In addition to the above end value, it can also be 20 ⁇ m or 7 ⁇ m; 14 is the top electrode metal connection layer above the top electrode of the resonator.
  • the thickness of the bottom electrode metal connection layer and the top electrode metal connection layer is generally 100 nm to 5 ⁇ m, and in addition to the above-mentioned end values, it can also be, for example, 1 ⁇ m.
  • the four sides of the pentagon of the resonator are connected to the bottom electrode metal connection layer. Therefore, when a voltage is applied to the bottom electrode of the resonator, the conductivity of the bottom electrode metal connection layer is extremely high. High, the four sides a, b, c, and d connecting the bottom electrode and the pentagon of the resonator have the same potential. Current flows in from the four sides of the bottom electrode. Therefore, when the resonator is working, its R s (series resistance) decreases Small, that is, the electrical energy loss of the electrode is reduced, so that the Q value of the resonator is improved, and the IL value (insertion loss value) of the filter composed of it can also be improved.
  • R s seriess resistance
  • the edges of the effective area of the resonator have the same potential, the acoustic main resonance mode is better, and the generation of spurious modes is suppressed; on the contrary, the potential of each edge of the effective area of the traditional resonator is different, resulting in inconsistent vibration of each part of the resonator, and the spurious mode is enhanced .
  • the bottom electrode metal connection layer above the bottom electrode is evenly covered around the pentagon, and the metal has good heat dissipation performance, it can effectively reduce the thermal resistance in the resonator, so that the power capacity of the resonator can be obtained. Promote.
  • FIG. 3 is an exemplary partial enlarged schematic diagram of part A (the end of the top electrode is adjacent to the end of the bottom electrode) in FIG. 2 according to an exemplary embodiment of the present invention, where 10 is the bottom electrode and 12 is the top Electrode, 13 is the bottom electrode metal connection layer on the bottom electrode, 14 is the top electrode metal connection layer above the top electrode, and 30 is the cavity structure at the bottom of the resonator. There is a distance d3 between the metal connection layers 13 and 14 to avoid contact between the top electrode metal connection layer and the bottom electrode metal connection layer to cause a short circuit, and the value can be greater than 5 ⁇ m.
  • Fig. 4 is a schematic diagram taken along the line B-B in Fig. 2 according to an exemplary embodiment of the present invention.
  • the structure in the vertical direction is as follows: Acoustic mirror structure 30, which can be a cavity structure etched in the substrate or an upwardly convex cavity structure, or a Bragg reflection structure, etc.
  • Acoustic reflection form, in Figure 4 is a cavity structure etched in the substrate; bottom electrode 10; piezoelectric layer 11; top electrode 12; and bottom electrode metal connection layer 13 located above the bottom electrode, which surrounds the effective area
  • the width of the edge part is d1 and d2, and the values of d1 and d2 may be equal or unequal, generally 1-50 ⁇ m, typically 5-10 ⁇ m, and its thickness is generally 100nm-5 ⁇ m.
  • Fig. 5 is a schematic diagram taken along line B-B in Fig. 2 according to another exemplary embodiment of the present invention.
  • Figure 5 is similar to the structure of Figure 4, except that the bottom electrode metal connection layer connected to the pentagon in Figure 5 covers a part of the piezoelectric layer 11 across the steps, and is perpendicular to the edge of the cavity. There is a gap d6 between, the value of which is greater than zero. In this way, the area covered by the metal connecting layer can be enlarged, its heat dissipation function can be further increased, the thermal resistance in the resonator can be effectively reduced, and the power capacity of the resonator can be further improved.
  • Fig. 6 is a schematic diagram taken along the line B-B in Fig. 2 according to still another exemplary embodiment of the present invention.
  • the structure of Figure 6 is similar to that of Figure 5, but the difference is that there are many small pillar structures on the bottom electrode metal connection layer.
  • the pillar structure can further increase the heat dissipation and reduce the thermal resistance in the resonator, so that the power of the resonator The capacity is further improved.
  • the heat dissipation structure is not limited to the small protrusion structure shown in FIG. 6, and may also be a rib structure or other structures that help increase the heat dissipation area.
  • Fig. 7 is a schematic top view of a bulk acoustic wave resonator according to an exemplary embodiment of the present invention.
  • the structure of FIG. 7 is similar to that of FIG. 2, except that the bottom and top electrode metal connection layers 13 and 14 only partially cover 10 and 12. At the same time, part of the terminals of the bottom electrode 10 and the top electrode 12 overlap in the vertical direction, which can increase the mechanical strength of the resonator at the corners and make the structure of the resonator more stable.
  • FIG. 8 is an exemplary partial enlarged schematic diagram of part C in FIG. 7 according to an exemplary embodiment of the present invention, where 10 is a bottom electrode, 12 is a top electrode, 30 is a cavity structure, and 13 is a bottom electrode above the bottom electrode
  • the metal connection layer, 14 is the metal connection layer above the top electrode.
  • the bottom electrode and the top electrode overlap in the vertical direction at the boundary junction. In this way, when the overlapped part is at the corner, the mechanical strength of the resonator at the corner can be increased, so that the The structure is more stable.
  • Fig. 9 is a schematic top view of a bulk acoustic wave resonator according to an exemplary embodiment of the present invention.
  • the structure of Fig. 9 is similar to that of Fig. 7 except that the top electrode of the resonator is connected to the four sides of the pentagon. And the width of the edge part of the pentagon surrounding the top electrode metal connection layer located above the top electrode is d1 and d2.
  • the values of d1 and d2 can be equal or unequal, generally 1-50 ⁇ m, and typically 5 10 ⁇ m, the thickness is generally 100nm-5 ⁇ m.
  • the bridge structure crosses the boundary of the cavity structure, and the width of the bridge structure is d5, which can be typically 5 ⁇ m. Due to the existence of the air gap at the bridge structure, the acoustic impedance does not match the acoustic impedance in the effective area of the resonator, which will make the transmission of sound waves discontinuous at the boundary. Therefore, at the boundary, a part of the acoustic energy will be coupled and reflected to In the effective excitation region, and converted into a piston acoustic mode perpendicular to the surface of the piezoelectric layer, the Q factor of the resonator is improved.
  • Fig. 10 is an exemplary partial enlarged schematic diagram of part D in Fig. 9 according to an exemplary embodiment of the present invention, wherein 10 is a bottom electrode, 12 is a top electrode, 30 is a cavity structure, and 13 is a bottom electrode above the bottom electrode The metal connection layer, 14 is the metal connection layer above the top electrode, and 100 is the bridge structure.
  • the acoustic wave energy in the resonator can be confined within its effective area, so the Q value of the resonator can be improved.
  • Fig. 11 is a schematic diagram taken along the line B-B in Fig. 9 according to an exemplary embodiment of the present invention.
  • the structure in the vertical direction is: an acoustic mirror structure 30, which can be a cavity structure etched in the substrate or an upwardly convex cavity structure, or it can be an acoustic wave structure such as a Bragg reflection structure.
  • Reflective form, in Figure 12 is the cavity structure etched in the substrate; bottom electrode 10; piezoelectric layer 11; top electrode 12; bridge structure 100, and air between the bridge structure and the piezoelectric layer Gap 101; and the top electrode metal connection layer 14, wherein the width of the top electrode metal connection layer surrounding the edge portion of the pentagon is d1 and d2.
  • the values of d1 and d2 can be equal or unequal, generally 1-50 ⁇ m, It can be typically 5-10 ⁇ m, and its thickness is generally 100nm-5 ⁇ m.
  • the top electrode may not be provided with a bridge structure, and the top electrode metal connection part is directly connected to the edge of the top electrode.
  • Fig. 12 is a schematic top view of a bulk acoustic wave resonator according to another exemplary embodiment of the present invention.
  • Figure 12 is similar to the structure of Figure 9, except that the bottom electrode and the top electrode of the resonator are connected to the sides of the pentagon, and the edge part of the metal connection layer of the top electrode above them is connected to the sides of the pentagon.
  • the distance between them is d1 and d2, and the distance between d1 and d2 can be equal or unequal, generally 1-50 ⁇ m, typically 5-10 ⁇ m, and its thickness is generally 100nm-5 ⁇ m.
  • the top electrode metal connection layer or the bottom electrode metal connection layer is arranged around 50% or more of the peripheral length of the effective area, or two metal connection layers together surround the peripheral length of the effective area Of 50% and above.
  • the effective area is described as a pentagon, but the present invention is not limited to this, and the effective area may also have other shapes.
  • the metal connection layer can include a basic connection part (for example, see the basic connection part 13a of the bottom electrode metal connection layer 13 in FIG. 2) and a surrounding extending from the side of the basic connection part around the effective area. (See, for example, the surrounding portion 13b of the bottom electrode metal connection layer in FIG. 2).
  • a surrounding part can be provided on one or both sides of the base connection part.
  • the material of the electrode metal connection layer can be gold (Au), aluminum (Al), copper (Cu), silver (Ag), and similar materials with good conductivity;
  • the material of the top electrode and the bottom electrode can be Tungsten (W), molybdenum (Mo), platinum (Pt), ruthenium (Ru), iridium (Ir), titanium tungsten (TiW), aluminum (Al), titanium (Ti) and other similar metals;
  • the piezoelectric layer material can be Materials such as aluminum nitride (AlN), zinc oxide (ZnO), lead zirconate titanate (PZT), lithium niobate (LiNbO3), quartz (Quartz), potassium niobate (KNbO3) or lithium tantalate (LiTaO3).
  • the present invention proposes a bulk acoustic wave resonator, including:
  • the bottom electrode is arranged above the substrate and has a bottom electrode metal connection layer;
  • the top electrode is opposed to the bottom electrode and has a top electrode metal connection layer
  • the piezoelectric layer is arranged above the bottom electrode and between the bottom electrode and the top electrode,
  • the overlapping area of the acoustic mirror, the bottom electrode, the piezoelectric layer and the top electrode in the thickness direction of the resonator constitutes the effective area of the resonator;
  • the top electrode metal connection layer and the bottom electrode metal connection layer are arranged around 50% or more of the peripheral length of the effective area in total.
  • the top electrode metal connection layer and the bottom electrode metal connection layer are surrounded by a total of
  • both metal connection layers partially surround the effective area (for example, see FIG. 12);
  • One metal connection layer only extends to the vicinity of the effective area but does not surround the effective area, and the other metal connection layer surrounds the effective area (for example, see Figure 2.
  • the top electrode metal connection layer can also be shown to have a smaller The width of the metal connection layer); and a metal connection layer does not extend to the vicinity of the effective area (for example, see the bottom electrode metal connection layer in FIG. 1), and another metal connection layer surrounds the effective area.
  • one of the top electrode metal connection layer and the bottom electrode metal connection layer is disposed around 90% or more of the peripheral length of the effective area.
  • top electrode metal connection layer or the bottom electrode metal connection layer is arranged around 50% or more of the peripheral length of the effective area.
  • the width of the part of the top electrode metal connection layer and/or the bottom electrode metal connection layer surrounding the effective area is in the range of 1-50 ⁇ m.
  • the present invention also proposes a bulk acoustic wave resonator, including:
  • the bottom electrode is arranged above the substrate and has a bottom electrode metal connection layer;
  • the top electrode is opposed to the bottom electrode and has a top electrode metal connection layer
  • the piezoelectric layer is arranged above the bottom electrode and between the bottom electrode and the top electrode,
  • the overlapping area of the acoustic mirror, the bottom electrode, the piezoelectric layer and the top electrode in the thickness direction of the resonator constitutes the effective area of the resonator;
  • At least one of the top electrode metal connection layer and the bottom electrode metal connection layer has a basic connection part and a surrounding part, and the surrounding part surrounds at least one of the effective area from two sides or one side of the basic connection part. Part of the extension.
  • the surrounding portion altogether surrounds 50% or more of the peripheral length of the effective area.
  • the width of the surrounding portion is in the range of 1-50 ⁇ m. Further, the width of the surrounding portion is in the range of 5-10 ⁇ m.
  • the present invention also provides a filter including a plurality of the above-mentioned bulk acoustic wave resonators.
  • the present invention also provides an electronic device including the above-mentioned filter or the above-mentioned bulk acoustic wave resonator.

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  • Acoustics & Sound (AREA)
  • Piezo-Electric Or Mechanical Vibrators, Or Delay Or Filter Circuits (AREA)

Abstract

一种体声波谐振器，包括：基底；声学镜（30）；底电极（10），设置在基底上方，具有底电极金属连接层（13）；顶电极（12），与所述底电极（10）对置，且具有顶电极金属连接层（14）；和压电层（11），设置在底电极（10）上方以及底电极（10）与顶电极（12）之间，其中：所述声学镜（30）、底电极（10）、压电层（11）和顶电极（12）在谐振器厚度方向上的重叠区域构成谐振器的有效区域；所述顶电极金属连接层（14）和所述底电极金属连接层（13）总共围绕所述有效区域的周边长度的50％及以上设置。一种滤波器，以及一种具有该滤波器的电子设备。

Description

体声波谐振器、滤波器及电子设备 技术领域
本发明的实施例涉及半导体领域，尤其涉及一种体声波谐振器，一种具有该谐振器的滤波器，以及一种具有该滤波器的电子设备。
背景技术
薄膜体声波谐振器(Film Bulk Acoustic Resonator，简称FBAR，又称为体声波谐振器，也称BAW)作为一种MEMS芯片在通信领域发挥着重要作用，FBAR滤波器具有尺寸小(μm级)、谐振频率高(GHz)、品质因数高、功率容量大、滚降效应好等优良特性，正在逐步取代传统的声表面波(SAW)滤波器和陶瓷滤波器。
传统的薄膜体声波谐振器其结构如图1所示。其中，10为谐振器的底电极，连接着谐振器五边形的两条边b和c；11为谐振器的压电层，12为谐振器的顶电极，连接着谐振器五边形的一条边；13、14分别为位于谐振器底电极和顶电极上方的金属连接层。对于图1中传统的薄膜体声波谐振器而言，当对底电极施加一电压时，电流仅能从谐振器的底电极与五边形相连的两条边b和c流入(此时b和c两条边上的电势相同，但与a和d两条边上的电势不同)，并经过电极电阻15，才能到达谐振器的顶电极与五边形相连接的另一边，因为电极为薄膜形式，电阻较大。这样能量损耗较大，导致谐振器的Q值降低。
发明内容
为解决或者缓解现有技术中的问题，提出了本发明。在本发明中，通过改变谐振器的电极与有效区域的连接方式，来减小谐振器的串联电阻R s。
根据本发明的实施例的一个方面，提出了一种体声波谐振器，包括：
基底；
声学镜；
底电极，设置在基底上方，具有底电极金属连接层；
顶电极，与所述底电极对置，且具有顶电极金属连接层；和
压电层，设置在底电极上方以及底电极与顶电极之间，
其中：
所述声学镜、底电极、压电层和顶电极在谐振器厚度方向上的重叠区域构成谐振器的有效区域；
所述顶电极金属连接层和所述底电极金属连接层总共围绕所述有效区域的周边长度的50％及以上设置。
可选的，所述底电极金属连接层围绕对应于所述有效区域的压电层的至少一部分设置。
可选的，底电极金属连接层具有设置于底电极上的第一部分以及覆盖压电层的上表面的一部分的第二部分，所述第二部分与顶电极间隔开。可选的，所述第一部分设置有散热结构。或者可选的，在谐振器的厚度方向上的投影中，所述第二部分与所述顶电极彼此间隔开第一距离。或者可选的，在谐振器的厚度方向上的投影中，所述第二部分处于声学镜边缘外侧且与所述声学镜边缘彼此间隔开第二距离。
可选的，所述顶电极金属连接层和所述底电极金属连接层总共围绕所述有效区域的周边长度的90％及以上设置。
可选的，所述顶电极金属连接层或所述底电极金属连接层围绕所述有效区域的周边长度的50％及以上设置。
可选的，所述顶电极金属连接层和/或所述底电极金属连接层围绕所述有效区域的部分的宽度在1-50μm的范围内，进一步可选的，在5-10μm的范围内。
可选的，所述顶电极金属连接层围绕所述有效区域的至少一部分设置且与所述压电层相接。
可选的，所述顶电极金属连接层围绕所述有效区域的至少一部分设置且与所述顶电极相接。或者可选的，所述顶电极具有围绕所述有效区域的至少一部分的桥部结构；且所述顶电极金属连接层围绕所述桥部结构的至少一部分而于所述桥部结构电连接。进一步可选的，所述顶电极金属连接层在桥部结构的外缘的上表面与桥部结构的外缘电连接。
可选的，所述有效区域为多边形。进一步可选的，“所述顶电极金属连接层和所述底电极金属连接层中的至少一个围绕所述有效区域的至少一部分”包括所述顶电极金属连接层和所述底电极金属连接层中的一个围绕所述有效区域的边缘的至少一半。
可选的，所述多边形为五边形；“所述顶电极金属连接层和所述底电极金属连接层中的至少一个围绕所述有效区域的至少一部分”包括所述顶电极金属连接层和所述底电极金属连接层中的一个大体围绕所述多边形的连续的至少三条边。进一步可选的，所述顶电极金属连接层围绕所述五边形的四条边设置，且所述底电极金属连接层围绕所述五边形的剩下的一条边设置；或者所述底电极金属连接层围绕所述五边形的四条边设置，且所述顶电极金属连接层围绕所述五边形的剩下的一条边设置；或者所述底电极金属连接层围绕所述五边形的大体二分之一边缘设置，且所述顶电极金属连接层围绕所述五边形的另外的二分之一边缘设置。
可选的，所述顶电极的终端与所述底电极的终端在谐振器的厚度方向上的投影中，存在彼此重叠的部分。
可选的，所述顶电极的终端与所述底电极的终端在谐振器的厚度方向上的投影中，彼此间隔开第三距离。可选的，所述第三距离大于5μm。
根据本发明的实施例的再一方面，提出了一种体声波谐振器，包括：
基底；
声学镜；
底电极，设置在基底上方，具有底电极金属连接层；
顶电极，与所述底电极对置，且具有顶电极金属连接层；和
压电层，设置在底电极上方以及底电极与顶电极之间，
其中：
所述声学镜、底电极、压电层和顶电极在谐振器厚度方向上的重叠区域构成谐振器的有效区域；
所述顶电极金属连接层和所述底电极金属连接层中的至少一个具有基础连接部以及围绕部，所述围绕部从所述基础连接部的两侧或者一侧围绕所述有效区域的至少一部分延伸。
可选的，所述围绕部总共围绕所述有效区域的周边长度的50％及以上。
可选的，所述围绕部的宽度在1-50μm的范围内。进一步的，所述围绕部的宽度在5-10μm的范围内。
根据本发明的实施例的另一方面，提出了一种滤波器，包括上述的体声波谐振器。
根据本发明的实施例的还一方面，提出了一种电子设备，包括上述的滤波器或者体声波谐振器。
附图说明
以下描述与附图可以更好地帮助理解本发明所公布的各种实施例中的这些和其他特点、优点，图中相同的附图标记始终表示相同的部件，其中：
图1为现有技术中的体声波谐振器的俯视示意图；
图2为根据本发明的一个示例性实施例的体声波谐振器的俯视示意图；
图3为根据本发明的一个示例性实施例的图2中A部分的示例性局部放大示意图；
图4为根据本发明的一个示例性实施例的沿图2中B-B线截得的示意图；
图5为根据本发明的另一个示例性实施例的沿图2中B-B线截得的示意图；
图6为根据本发明的再一个示例性实施例的沿图2中B-B线截得的示意图；
图7为根据本发明的一个示例性实施例的体声波谐振器的俯视示意图；
图8为根据本发明的一个示例性实施例的图7中C部分的示例性局部放大示意图；
图9为根据本发明的一个示例性实施例的体声波谐振器的俯视示意图；
图10为根据本发明的一个示例性实施例的图9中D部分的示例性局部放大示意图；
图11为根据本发明的一个示例性实施例的沿图9中B-B线截得的示意图；
图12为根据本发明的一个示例性实施例的体声波谐振器的俯视示意图。
具体实施方式
下面通过实施例，并结合附图，对本发明的技术方案作进一步具体的说明。下述参照附图对本发明实施方式的说明旨在对本发明的总体发明构思进行解释，而不应当理解为对本发明的一种限制。
下面参照图描述根据本发明的体声波谐振器。需要指出的是，在本发明的实施例中，虽然以薄膜体声波谐振器为例进行说明，这些说明均可以适用于其他类型的体声波谐振器。
图2为根据本发明的一个示例性实施例的体声波谐振器的俯视示意图。
图2所示的实施例中，10为谐振器的底电极，其连接五边形(有效区域)的四条边，11为谐振器的压电层；12为谐振器的顶电极；13为谐振器底电极上方的底电极金属连接层，且包围有效区域边缘部分的宽度为d1和d2，d1和d2的值可以相等也可以不相等，一般的在1-50μm，典型的可以为5-10μm，除了上述端值之外，还可为20μm或者7μm；14为谐振器顶电极上方的顶电极金属连接层。底电极金属连接层和顶电极金属连接层的厚度一般的在100nm-5μm，除了上述端值之外，还可以例如为1μm。
在本实施例中，如图所示，谐振器五边形的四条边与底电极金属连接层连接，所以当对谐振器的底电极施加一电压时，由于底电极金属连接层的导电率极高，底电极与谐振器五边形相连接的四条边上a、b、c、d具有相同的电势，电流从底电极四条边流入，因此在谐振器工作时，其R s(串联电阻)减小，即电极电学能量损耗减少，从而使得谐振器的Q值 得到提高，同时由其组成的滤波器的IL值(插入损耗值)也可提高。同时，由于谐振器有效区域边缘具有相同电势，声学主谐振模式更优，抑制寄生模式的产生；反之，传统图1谐振器有效区域各边缘电势不同，导致谐振器各部分振动不一致，寄生模式增强。
同时，由于在底电极上方的底电极金属连接层也均匀覆盖在五边形的四周，且金属的散热性性能较好，能够有效减小谐振器中的热阻，使得谐振器的功率容量得到提升。
图3为根据本发明的一个示例性实施例的图2中A部分(顶电极的端部与底电极的端部相邻处)的示例性局部放大示意图，其中10为底电极，12为顶电极，13为底电极上的底电极金属连接层，14为顶电极上方的顶电极金属连接层，30为谐振器底部的空腔结构。其中金属连接层13与14之间有一距离为d3，避免顶电极金属连接层与底电极金属连接层相接触造成短路，其值可以为大于5μm。
图4为根据本发明的一个示例性实施例的沿图2中B-B线截得的示意图。在图4中，在垂直方向上其结构依次为：声反射镜结构30，其可以为在基底中刻蚀出的空腔结构或者为向上凸起的空腔结构，也可以为布拉格反射结构等声波反射形式，在图4中为在基底中刻蚀出的空腔结构；底电极10；压电层11；顶电极12；以及位于底电极上方的底电极金属连接层13，其包围有效区域边缘部分的宽度为d1和d2，d1和d2的值可以相等也可以不相等，一般的在1-50μm，典型的可以为5-10μm，其厚度一般的为100nm-5μm。
图5为根据本发明的另一个示例性实施例的沿图2中B-B线截得的示意图。图5与图4结构相似，不同之处在于，图5中与五边形相连接的底电极金属连接层跨过台阶覆盖住压电层11的一部分，且在垂直方向上其与空腔边缘之间有一间距d6，其值大于零。这样能够使得金属连接层覆盖的区域变大，能够进一步增大其散热功能，有效减小谐振器中的热阻，使得谐振器的功率容量进一步得到提升。
图6为根据本发明的再一个示例性实施例的沿图2中B-B线截得的示意图。图6与图5结构相似，不同之处在于，在其底电极金属连接层上 有许多的小立柱结构，立柱结构能够进一步增加散热性，减小谐振器中的热阻，使得谐振器的功率容量进一步得到提升。散热结构不限于图6所示的小凸起结构，还可以为肋条结构或者其他有助于增加散热面积的结构。
图7为根据本发明的一个示例性实施例的体声波谐振器的俯视示意图。图7与图2结构相似，不同之处在于，底电极和顶电极金属连接层13和14只是部分覆盖10和12。同时，底电极10的部分终端与顶电极12在垂直方向上是重合的，这样能够增加谐振器在拐角处的机械强度，使得谐振器的结构更为稳定。
图8为根据本发明的一个示例性实施例的图7中C部分的示例性局部放大示意图，其中10为底电极，12为顶电极，30为空腔结构，13为底电极上方的底电极金属连接层，14为顶电极上方的金属连接层。在本实施例中，底电极与顶电极在边界连接处在垂直方向上是重合的，这样在该重合部位在拐角处的情况下，能够增加谐振器在拐角处的机械强度，使得谐振器的结构更为稳定。
图9为根据本发明的一个示例性实施例的体声波谐振器的俯视示意图。图9与图7结构相似，不同之处在于，谐振器的顶电极与五边形的四条边相连。且位于顶电极上方的顶电极金属连接层包围五边形的边缘部分的宽度为d1和d2，d1和d2的值可以相等也可以不相等，一般的在1-50μm，典型的可以为5-10μm，其厚度一般的为100nm-5μm。而且在顶电极的边缘与五边形之间有一桥部结构100，桥部结构跨越空腔结构的边界处，且桥部结构的宽度为d5典型的可以为5μm。在桥部结构处由于空气隙的存在使其声阻抗与谐振器的有效区域内声阻抗不匹配，会使得声波在边界处传输不连续，因此在边界处，一部分声能就会耦合且反射到有效激励区域中，并且转换成与压电层表面垂直的活塞声波模式，从而使得谐振器的Q因子得到提高。
图10为根据本发明的一个示例性实施例的图9中D部分的示例性局部放大示意图，其中10为底电极，12为顶电极，30为空腔结构，13为底电极上方的底电极金属连接层，14为顶电极上方的金属连接层，100为桥部结构。在本实施例中，由于在顶电极的边缘与五边形的边缘之间有 一桥部结构，能够将谐振器中的声波能量限定在其有效区域内，因此可以提高谐振器的Q值。
图11为根据本发明的一个示例性实施例的沿图9中B-B线截得的示意图。图11中，在垂直方向上其结构依次为：声反射镜结构30，其可以为在基底中刻蚀出的空腔结构或者为向上凸起的空腔结构，也可以为布拉格反射结构等声波反射形式，在图12中为在基底中刻蚀出的空腔结构；底电极10；压电层11；顶电极12；桥部结构100，和位于桥部结构与压电层之间的空气隙101；以及顶电极金属连接层14，其中顶电极金属连接层包围五边形的边缘部分的宽度为d1和d2，d1和d2的值可以相等也可以不相等，一般的在1-50μm，典型的可以为5-10μm，其厚度一般的为100nm-5μm。
需要指出的是，虽然没有示出，顶电极也可以不设置桥部结构，而顶电极金属连接部则直接连接到顶电极边缘。
图12为根据本发明的另一个示例性实施例的体声波谐振器的俯视示意图。图12与图9结构相似，不同之处在于，谐振器的底电极和顶电极都和五边形的边相连，且位于它们上方的顶电极金属连接层的边缘部分与五边形的边之间的间距分别为d1和d2，d1和d2的距离可以相等也可以不相等，一般的在1-50μm，典型的可以为5-10μm，其厚度一般的为100nm-5μm。
在本发明中，所述顶电极金属连接层或所述底电极金属连接层围绕所述有效区域的周边长度的50％及以上设置，也可以是两个金属连接层总共围绕有效区域的周边长度的50％及以上设置。
需要指出的是，在本发明的示例性实施例中，以有效区域为五边形进行说明，但是本发明不限于此，有效区域还可以为其他形状。
在本发明中，可以看到，金属连接层可以包括基础连接部(例如参见图2中的底电极金属连接层13的基础连接部13a)以及从基础连接部的侧面而围绕有效区域延伸的围绕部(例如，参见图2中的底电极金属连接层的围绕部13b)。很明显，可以在基础连接部的一侧或者两侧设置围绕部。
在本发明中，电极金属连接层的材料可以是金(Au)、铝(Al)、铜(Cu)、银(Ag)、等导电性良好的类似材料；顶电极和底电极的材料可以是钨(W)、钼(Mo)、铂(Pt)，钌(Ru)、铱(Ir)、钛钨(TiW)、铝(Al)、钛(Ti)等类似金属；压电层材料可以为氮化铝(AlN)、氧化锌(ZnO)、锆钛酸铅(PZT)、铌酸锂(LiNbO3)、石英(Quartz)、铌酸钾(KNbO3)或钽酸锂(LiTaO3)等材料。
基于以上，本发明提出了一种体声波谐振器，包括：
基底；
声学镜；
底电极，设置在基底上方，具有底电极金属连接层；
顶电极，与所述底电极对置，且具有顶电极金属连接层；和
压电层，设置在底电极上方以及底电极与顶电极之间，
其中：
所述声学镜、底电极、压电层和顶电极在谐振器厚度方向上的重叠区域构成谐振器的有效区域；
所述顶电极金属连接层和所述底电极金属连接层总共围绕所述有效区域的周边长度的50％及以上设置。
需要指出的是，在本发明中，“所述顶电极金属连接层和所述底电极金属连接层总共围绕”包括了两个金属连接层均部分包围有效区域的情形(例如参见图12)；一个金属连接层仅仅是延伸到有效区域附近但不围绕有效区域、另一个金属连接层围绕有效区域的情形(例如参见图2，在图2中，顶电极金属连接层还可以显示为具有更小的宽度)；以及一个金属连接层没有延伸到有效区域附近(例如参见图1中的底电极金属连接层)、另一个金属连接层围绕有效区域的情形。
进一步的，所述顶电极金属连接层和所述底电极金属连接层中的一个围绕所述有效区域的周边长度90％及以上设置。
进一步的，所述顶电极金属连接层或所述底电极金属连接层围绕所述有效区域的周边长度的50％及以上设置。
进一步的，所述顶电极金属连接层和/或所述底电极金属连接层围绕所述有效区域的部分的宽度在1-50μm的范围内。
以及以上，本发明还提出了一种体声波谐振器，包括：
基底；
声学镜；
底电极，设置在基底上方，具有底电极金属连接层；
顶电极，与所述底电极对置，且具有顶电极金属连接层；和
压电层，设置在底电极上方以及底电极与顶电极之间，
其中：
所述声学镜、底电极、压电层和顶电极在谐振器厚度方向上的重叠区域构成谐振器的有效区域；
所述顶电极金属连接层和所述底电极金属连接层中的至少一个具有基础连接部以及围绕部，所述围绕部从所述基础连接部的两侧或者一侧围绕所述有效区域的至少一部分延伸。可选的，所述围绕部总共围绕所述有效区域的周边长度的50％及以上。可选的，所述围绕部的宽度在1-50μm的范围内。进一步的，所述围绕部的宽度在5-10μm的范围内。
基于以上，本发明还提出了一种滤波器，包括多个上述的体声波谐振器。本发明还提出了一种电子设备，包括上述的滤波器或者上述的体声波谐振器。
尽管已经示出和描述了本发明的实施例，对于本领域的普通技术人员而言，可以理解在不脱离本发明的原理和精神的情况下可以对这些实施例进行变化，本发明的范围由所附权利要求及其等同物限定。

Claims (28)

  1. 一种体声波谐振器，包括：
    基底；
    声学镜；
    底电极，设置在基底上方，具有底电极金属连接层；
    顶电极，与所述底电极对置，且具有顶电极金属连接层；和
    压电层，设置在底电极上方以及底电极与顶电极之间，
    其中：
    所述声学镜、底电极、压电层和顶电极在谐振器厚度方向上的重叠区域构成谐振器的有效区域；
    所述顶电极金属连接层和所述底电极金属连接层总共围绕所述有效区域的周边长度的50％及以上设置。
  2. 根据权利要求1所述的谐振器，其中：
    所述底电极金属连接层围绕对应于所述有效区域的压电层的至少一部分设置。
  3. 根据权利要求2所述的谐振器，其中：
    所述底电极金属连接层的厚度与所述压电层的厚度相同。
  4. 根据权利要求2所述的谐振器，其中：
    底电极金属连接层具有设置于底电极上的第一部分以及覆盖压电层的上表面的一部分的第二部分，所述第二部分与顶电极间隔开。
  5. 根据权利要求4所述的谐振器，其中：
    所述第一部分设置有散热结构。
  6. 根据权利要求4所述的谐振器，其中：
    在谐振器的厚度方向上的投影中，所述第二部分与所述顶电极彼此间隔开第一距离。
  7. 根据权利要求4所述的谐振器，其中：
    在谐振器的厚度方向上的投影中，所述第二部分处于声学镜边缘外侧且与所述声学镜边缘彼此间隔开第二距离(d6)。
  8. 根据权利要求1所述的谐振器，其中：
    所述顶电极金属连接层和所述底电极金属连接层总共围绕所述有效 区域的周边长度的90％及以上设置。
  9. 根据权利要求1所述的谐振器，其中：
    所述顶电极金属连接层或所述底电极金属连接层围绕所述有效区域的周边长度的50％及以上设置。
  10. 根据权利要求1所述的谐振器，其中：
    所述顶电极金属连接层和/或所述底电极金属连接层围绕所述有效区域的部分的宽度在1-50μm的范围内。
  11. 根据权利要求10所述的谐振器，其中：
    所述顶电极金属连接层和/或所述底电极金属连接层围绕所述有效区域的部分的宽度在5-10μm的范围内。
  12. 根据权利要求1-11中任一项所述的谐振器，其中：
    所述顶电极金属连接层围绕所述有效区域的至少一部分设置且与所述压电层相接。
  13. 根据权利要求1-11中任一项所述的谐振器，其中：
    所述顶电极金属连接层围绕所述有效区域的至少一部分设置且与所述顶电极相接。
  14. 根据权利要求13所述的谐振器，其中：
    所述顶电极具有围绕所述有效区域的至少一部分的桥部结构；且
    所述顶电极金属连接层围绕所述桥部结构的至少一部分而于所述桥部结构电连接。
  15. 根据权利要求14所述的谐振器，其中：
    所述顶电极金属连接层在桥部结构的外缘的上表面与桥部结构的外缘电连接。
  16. 根据权利要求1-15中任一项所述的谐振器，其中：
    所述有效区域为多边形。
  17. 根据权利要求16所述的谐振器，其中：
    “所述顶电极金属连接层和所述底电极金属连接层中的至少一个围绕所述有效区域的至少一部分”包括所述顶电极金属连接层和所述底电极金属连接层中的一个围绕所述有效区域的边缘的至少一半。
  18. 根据权利要求17所述的谐振器，其中：
    所述多边形为五边形；
    “所述顶电极金属连接层和所述底电极金属连接层中的至少一个围绕所述有效区域的至少一部分”包括所述顶电极金属连接层和所述底电极金属连接层中的一个大体围绕所述多边形的连续的至少三条边。
  19. 根据权利要求18所述的谐振器，其中：
    所述顶电极金属连接层围绕所述五边形的四条边设置，且所述底电极金属连接层围绕所述五边形的剩下的一条边设置；或者
    所述底电极金属连接层围绕所述五边形的四条边设置，且所述顶电极金属连接层围绕所述五边形的剩下的一条边设置；或者
    所述底电极金属连接层围绕所述五边形的大体二分之一边缘设置，且所述顶电极金属连接层围绕所述五边形的另外的二分之一边缘设置。
  20. 根据权利要求1-19中任一项所述的谐振器，其中：
    所述顶电极的终端与所述底电极的终端在谐振器的厚度方向上的投影中，存在彼此重叠的部分。
  21. 根据权利要求1-19中任一项所述的谐振器，其中：
    所述顶电极的终端与所述底电极的终端在谐振器的厚度方向上的投影中，彼此间隔开第三距离(d3)。
  22. 根据权利要求21所述的谐振器，其中：
    所述第三距离大于5μm。
  23. 一种体声波谐振器，包括：
    基底；
    声学镜；
    底电极，设置在基底上方，具有底电极金属连接层；
    顶电极，与所述底电极对置，且具有顶电极金属连接层；和
    压电层，设置在底电极上方以及底电极与顶电极之间，
    其中：
    所述声学镜、底电极、压电层和顶电极在谐振器厚度方向上的重叠区域构成谐振器的有效区域；
    所述顶电极金属连接层和所述底电极金属连接层中的至少一个具有基础连接部以及围绕部，所述围绕部从所述基础连接部的两侧或者一侧围 绕所述有效区域的至少一部分延伸。
  24. 根据权利要求23所述的谐振器，其中：
    所述围绕部总共围绕所述有效区域的周边长度的50％及以上。
  25. 根据权利要求23所述的谐振器，其中：
    所述围绕部的宽度在1-50μm的范围内。
  26. 根据权利要求25所述的谐振器，其中：
    所述围绕部的宽度在5-10μm的范围内。
  27. 一种滤波器，包括根据权利要求1-26中任一项所述的体声波谐振器。
  28. 一种电子设备，包括根据权利要求27所述的滤波器或者根据权利要求1-26中任一项所述的体声波谐振器。
PCT/CN2020/086558 2019-07-08 2020-04-24 体声波谐振器、滤波器及电子设备 Ceased WO2021004127A1 (zh)

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