WO2021010616A1 - 표시 장치 및 표시 장치의 제조 방법 - Google Patents
표시 장치 및 표시 장치의 제조 방법 Download PDFInfo
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- WO2021010616A1 WO2021010616A1 PCT/KR2020/008404 KR2020008404W WO2021010616A1 WO 2021010616 A1 WO2021010616 A1 WO 2021010616A1 KR 2020008404 W KR2020008404 W KR 2020008404W WO 2021010616 A1 WO2021010616 A1 WO 2021010616A1
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- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
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- H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
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- H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
- H10D86/441—Interconnections, e.g. scanning lines
- H10D86/443—Interconnections, e.g. scanning lines adapted for preventing breakage, peeling or short circuiting
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- H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
- H10D86/451—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs characterised by the compositions or shapes of the interlayer dielectrics
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- H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
- H10D86/60—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs wherein the TFTs are in active matrices
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- H10K59/12—Active-matrix OLED [AMOLED] displays
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- H10W72/072—Connecting or disconnecting of bump connectors
- H10W72/07231—Techniques
- H10W72/07232—Compression bonding, e.g. thermocompression bonding
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- H10W72/221—Structures or relative sizes
- H10W72/222—Multilayered bumps, e.g. a coating on top and side surfaces of a bump core
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- H10W72/241—Dispositions, e.g. layouts
- H10W72/247—Dispositions of multiple bumps
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- H10W74/15—Encapsulations, e.g. protective coatings characterised by their shape or disposition on active surfaces of flip-chip devices, e.g. underfills
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- H10W90/722—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bump connectors between stacked chips
Definitions
- the present invention relates to a display device and a method of manufacturing a display device including the same.
- the display device is a device that visually displays data.
- a display device includes a substrate partitioned into a display area DA and a non-display area NDA.
- a pixel is disposed on the substrate in the display area DA, and a pad or the like is disposed on the substrate in the non-display area NDA.
- a driving circuit or the like is mounted on the pad to transmit a driving signal to the pixel.
- the driving circuit includes a plurality of bumps, and each bump may be bonded to a pad separated from each other.
- An object to be solved by the present invention is to provide a display device capable of improving bonding reliability between a pad and a bump.
- a display panel includes a display substrate having a display area and a pad area disposed around the display area defined; A connection wire disposed on the pad area of the display substrate; A signal wire disposed on the connection wire; And a supporter disposed between the display substrate and the connection line, and the connection line directly contacts the supporter.
- a planar size of the connection wire may be larger than a planar size of the supporter, and the connection wire may cover the supporter.
- the size of the signal wire on a plane is larger than that of the connection wire, and the signal wire may directly contact the connection wire.
- An insulating layer disposed between the display substrate and the signal wire may be further included, and the insulating layer may cover a side surface of the connection wire and expose a top surface.
- the signal wiring may directly contact an upper surface of the insulating layer.
- the cross-sectional shape of the supporter may include at least one of a trapezoid, a triangular shape, a pentagonal shape, a semicircle, a semi-elliptical shape, or a square shape.
- the supporter may include a pattern extending along a long side direction of the signal line, a plurality of patterns of the supporter, and patterns of the plurality of supporters may be disposed to be spaced apart along a short side echo of the signal line.
- the supporter may include a pattern extending along a short side direction of the signal line, a plurality of patterns of the supporter, and patterns of the plurality of supporters may be spaced apart along a long side reflection of the signal line.
- the supporter may have a lattice shape extending along a long side direction and a short side direction of the signal line on a plane.
- the supporter may have a plurality of island shapes spaced apart from each other along a long side direction and a short side direction of the signal line on a plane.
- the plurality of connection wires may further include a non-conductive film or a non-conductive binder disposed between the plurality of connection wires.
- a display panel includes a display substrate having a display area and a pad area disposed around the display area defined; A first connection wiring disposed on the pad area of the display substrate; And a signal wire disposed on the first connection wire, wherein the first connection wire includes a first part, a second part disposed on one side of the first part, and a second part disposed on the other side of the first part. 3 portions, wherein a surface height of the first portion is greater than a surface height of the second portion and a surface height of the third portion.
- the first connection wiring includes a fourth portion overlapping with the first portion of the signal wiring, a fifth portion overlapping with the second portion of the signal wiring, and a sixth portion overlapping with the third portion of the signal wiring.
- a portion, and a thickness of the fourth portion may be greater than a thickness of the fifth portion and the sixth portion.
- a second connection wire disposed between the first connection wire and the signal wire is further included, and a planar size of the second connection wire is smaller than that of the first connection wire and the signal wire, and the The second connection wiring may be disposed to overlap the first portion of the signal wiring in a thickness direction.
- a display device for solving the above problem includes a display substrate having a display area and a pad area disposed around the display area defined, a connection line disposed on the pad area of the display substrate, and A display panel including a signal line disposed on the display board and a supporter disposed between the display substrate and the connection line; And a driving integrated circuit attached on the pad area of the display substrate and including a bump connected to the signal line, wherein the connection line directly contacts the supporter.
- a planar size of the connection wire may be larger than a planar size of the supporter, and the connection wire may cover the supporter.
- the size of the signal wire on a plane is larger than that of the connection wire, and the signal wire may directly contact the connection wire.
- An insulating layer disposed between the display substrate and the signal wire may be further included, and the insulating layer may cover a side surface of the connection wire and expose a top surface.
- the signal wiring may directly contact an upper surface of the insulating layer.
- the signal wiring includes a first portion overlapping with the supporter, a second portion non-overlapping with the supporter and positioned on one side of the first portion, and a first portion non-overlapping with the supporter and disposed on the other side of the first portion. It includes three portions, and an upper surface of the first portion may protrude in a thickness direction from an upper surface of the second portion and an upper surface of the third portion.
- the driving integrated circuit may further include a driving substrate and a driving wiring disposed on the driving substrate, and the bump may be disposed on the driving wiring and connected to the driving wiring.
- the bump includes a first part, a second part disposed on one side of the first part, and a third part disposed on the other side of the first part, and the surface of the first part is a surface of the second part And it may be recessed in the thickness direction than the surface of the third portion.
- a first part of the signal wire is connected to a first part of the bump, a second part of the signal wire is connected to a second part of the bump, and a third part of the signal wire is a third part of the bump And can be connected.
- the bump may be directly connected to the signal wire.
- the bump may be ultrasonically connected to the signal wire.
- a method of manufacturing a display device includes forming a supporter on a base substrate; Forming a connection wire on the supporter; And forming a signal wire electrically connected to the connection wire and covering the connection wire on the connection wire, wherein the connection wire covers and directly contacts the supporter.
- the forming of the supporter on the base substrate may further include forming the supporter through a photolithography process, an inkjet process, or a squeezing process.
- the method may further include attaching a driving integrated circuit on the signal wiring.
- Attaching the driving integrated circuit may include directly connecting a bump to the signal line.
- the signal wiring includes a first portion overlapping with the supporter, a second portion non-overlapping with the supporter and positioned on one side of the first portion, and a first portion non-overlapping with the supporter and disposed on the other side of the first portion. It includes three portions, and an upper surface of the first portion may protrude in a thickness direction from an upper surface of the second portion and an upper surface of the third portion.
- the bump includes a first part, a second part disposed on one side of the first part, and a third part disposed on the other side of the first part, and the surface of the first part is a surface of the second part And it may be recessed in the thickness direction than the surface of the third portion.
- a first part of the signal wire is connected to a first part of the bump, a second part of the signal wire is connected to a second part of the bump, and a third part of the signal wire is a third part of the bump And can be connected.
- a display device having high bonding reliability can be provided.
- FIG. 1 is a plan layout view of a display device according to an exemplary embodiment.
- FIG. 2 is a schematic partial cross-sectional view of a display device according to an exemplary embodiment when it is bent.
- FIG 3 is a cross-sectional view of one pixel and a pad area according to an exemplary embodiment.
- FIG. 4 is a plan layout diagram of a pad area of a display panel according to an exemplary embodiment.
- FIG. 5 is a plan layout diagram of a driving integrated circuit according to an exemplary embodiment.
- FIG. 6 is a plan layout view of a pad area of a display panel to which a driving integrated circuit is attached.
- FIG. 7 is a partially enlarged view of FIG. 6.
- FIG. 8 is a cross-sectional view taken along line X1-X1' of FIG. 7.
- FIG. 9 is a cross-sectional view taken along line X2-X2' of FIG. 7.
- FIG. 10 is a flowchart illustrating a method of manufacturing a display device according to an exemplary embodiment.
- 11 and 12 are cross-sectional views illustrating a method of manufacturing a display device according to an exemplary embodiment.
- FIG. 13 is a cross-sectional view illustrating a method of manufacturing a display device according to another exemplary embodiment.
- FIG. 14 and 15 are cross-sectional views illustrating a method of manufacturing a display device according to another exemplary embodiment.
- 16 and 17 are cross-sectional views illustrating a method of manufacturing a display device according to another exemplary embodiment.
- FIG. 18 is a cross-sectional view illustrating a method of manufacturing a display device according to an exemplary embodiment.
- 19 is a cross-sectional view of a pad area of a display device according to another exemplary embodiment.
- 20 is a cross-sectional view of a pad area of a display device according to another exemplary embodiment.
- 21 is a cross-sectional view of a pad area of a display device according to another exemplary embodiment.
- FIG. 22 is a cross-sectional view of a pad area of a display device according to another exemplary embodiment.
- FIG. 23 is a cross-sectional view of a pad area of a display device according to another exemplary embodiment.
- 24 is a plan layout diagram of a pad area of a display panel to which a driving integrated circuit is attached according to another exemplary embodiment.
- 25 is a plan layout diagram of a pad area of a display panel to which a driving integrated circuit is attached according to another exemplary embodiment.
- 26 is a plan layout view of a pad area of a display panel to which a driving integrated circuit is attached according to another exemplary embodiment.
- FIG. 27 is a plan layout diagram of a pad area of a display panel to which a driving integrated circuit is attached according to another exemplary embodiment.
- FIG. 28 is a diagram illustrating modified examples of a supporter according to an embodiment.
- 29 is a plan layout diagram of a pad area of a display panel to which a driving integrated circuit is attached according to another exemplary embodiment.
- FIG. 30 is a cross-sectional view of a pad area of a display device according to another exemplary embodiment.
- 31 is a plan layout view of a pad area of a display panel to which a driving integrated circuit is attached according to another exemplary embodiment.
- FIG. 32 is a cross-sectional view of a pad area of a display device according to another exemplary embodiment.
- FIGS. 31 and 32 are cross-sectional views of the connection wiring according to FIGS. 31 and 32 in each step.
- a display device is a device that displays moving images or still images
- the display devices include mobile phones, smart phones, tablet PCs (Personal Computers), and smart watches, watch phones, mobile communication terminals, electronic notebooks, e-books, and portable multimedia devices (PMPs).
- Player navigation
- UMPC Ultra Mobile PC
- portable electronic devices as well as TV, notebook, monitor, advertising board, can be used to implement the display screen of various products such as Internet of Things.
- FIG. 1 is a plan layout view of a display device according to an exemplary embodiment
- FIG. 2 is a schematic partial cross-sectional view of a display device according to an exemplary embodiment.
- the display device 1 includes a display area DA for displaying an image, and a non-display area NDA disposed around the display area DA.
- the display area DA may have a rectangular shape with a vertical corner or a rectangular shape with a round corner.
- the planar shape of the display area DA is not limited to a rectangle, and may have a circular shape, an oval shape, or various other shapes.
- the display area DA includes a plurality of pixels. A specific cross-sectional structure of the pixel will be described later.
- a non-display area NDA is disposed around the display area DA.
- the non-display area NDA may be disposed adjacent to both short sides of the display area DA. Further, the non-display area NDA may be disposed adjacent to both short sides as well as both long sides of the display area DA, and may surround all sides of the display area DA. That is, the non-display area NDA may constitute a border of the display area DA.
- the display device may include a display panel 100 displaying a screen and a driving integrated circuit 300 attached to the display panel 100 to drive a pixel circuit of the display panel 100.
- the driving integrated circuit 300 may be implemented as a chip on plastic (COP) applied as a driving chip (IC) and mounted directly on the display panel 100.
- COP chip on plastic
- the display panel 100 may be, for example, an organic light emitting display panel.
- an organic light emitting display panel is applied as the display panel 100, but is not limited thereto, and a liquid crystal display (LCD) panel or a field emission display (FED) panel
- LCD liquid crystal display
- FED field emission display
- other types of display panels such as an electrophoretic device may be applied.
- the display panel 100 may include a main area MA and a bending area BA.
- the main area MA may be flat.
- the display area DA of the display panel 100 and a partial area of the non-display area NDA may be disposed.
- the bending area BA may be disposed on at least one side of the main area MA.
- one bending area BA is arranged adjacent to the lower side of the main area MA, but the bending area BA is on the other side such as the left, right, upper side of the main area MA. Can be placed adjacent to. Further, the bending area BA may be disposed on two or more sides of the main area MA.
- the bending area BA may be bent in a direction opposite to the display direction (in the case of a front emission type, a rear direction).
- the bezel of the display device may be reduced.
- the display device 1 may further include a sub area SA extending from the bending area BA.
- the sub area SA may be parallel to the main area MA.
- the sub area SA may overlap the main area MA in the thickness direction.
- the bending area BA and the sub area SA may be the non-display area NDA, but are not limited thereto.
- the display panel 100 may include a pad area PA disposed in the non-display area NDA.
- the pad area PA may be located in the sub area SA as illustrated in the drawing. However, the present invention is not limited thereto, and the pad area PA may be located in the main area MA or the bending area BA.
- the driving integrated circuit 300 may be attached on the pad area PA of the display panel 100.
- a plurality of signal wires are disposed in the pad area PA of the non-display area NDA.
- the plurality of signal wires may be connected to the thin film transistor through a connection wire electrically connected to at least one thin film transistor of a pixel in the display area DA.
- the connection wiring may be disposed across the display area DA and the non-display area NDA.
- the bumps of the driving integrated circuit 300 may be connected to the plurality of signal wires.
- the display device may further include a printed circuit board 500 attached to the display panel 100.
- the printed circuit board 500 may be attached to the outside of the pad area PA of the display panel 100 of the non-display area NDA. That is, the pad area PA to which the driving integrated circuit 300 is attached may be disposed between the display area DA and the area to which the printed circuit board 500 is attached.
- the printed circuit board 500 may be attached to the lower surface end of the sub area SA.
- the printed circuit board 500 may be a flexible circuit board (FPCB).
- FPCB flexible circuit board
- the present invention is not limited thereto, and the printed circuit board 500 may be connected to the display panel 100 through a flexible film.
- FIG 3 is a cross-sectional view of one pixel and a pad area according to an exemplary embodiment.
- the display device 1 further includes a lower panel sheet 200 disposed under the display panel 100.
- the lower panel sheet 200 may be attached to the rear surface of the display panel 100.
- the lower panel sheet 200 includes at least one functional layer.
- the functional layer may be a layer that performs a heat dissipation function, an electromagnetic wave shielding function, a grounding function, a buffer function, a strength reinforcing function, a support function, and/or a digitizing function.
- the functional layer may be a sheet layer or film made of a sheet, such as a film layer, a thin film layer, a coating layer, a panel, or a plate.
- One functional layer may be formed of a single layer, but may be formed of a plurality of laminated thin films or coating layers.
- the functional layer may be, for example, a support substrate, a heat dissipation layer, an electromagnetic wave shielding layer, a shock absorbing layer, a digitizer, or the like.
- the display panel 100 may include a display substrate 101, a plurality of conductive layers, a plurality of insulating layers and organic layers EL that insulate the same.
- the display substrate 101 is disposed over the entire display area DA and the non-display area NDA.
- the display substrate 101 may function to support several elements disposed thereon.
- the display substrate 101 may be a rigid substrate including a rigid material such as soft glass or quartz.
- the present invention is not limited thereto, and the display substrate 101 may be a flexible substrate including a flexible material such as polyimide (PI).
- the buffer layer 102 may be disposed on the display substrate 101.
- the buffer layer 102 may prevent penetration of moisture and oxygen from the outside through the display substrate 101.
- the buffer layer 102 may include any one of a silicon nitride (SiNx) layer, a silicon oxide (SiO2) layer, and a silicon oxynitride (SiOxNy) layer.
- a semiconductor layer 105 may be disposed on the buffer layer 102.
- the semiconductor layer 105 forms a channel of a thin film transistor.
- the semiconductor layer 105 may be disposed in each pixel of the display area DA, and may also be disposed in the non-display area NDA in some cases.
- the semiconductor layer 105 may include a source/drain region and an active region.
- the semiconductor layer 105 may include polycrystalline silicon.
- a first insulating layer 111 may be disposed on the semiconductor layer 105.
- the first insulating layer 111 may be disposed over the entire surface of the display substrate 101.
- the first insulating layer 111 may be a gate insulating layer having a gate insulating function.
- the first insulating layer 111 may include a silicon compound, a metal oxide, or the like.
- the first insulating layer 111 may include silicon oxide, silicon nitride, silicon oxynitride, aluminum oxide, tantalum oxide, hafnium oxide, zirconium oxide, titanium oxide, and the like. These may be used alone or in combination with each other.
- a supporter SM may be disposed on the first insulating layer 111.
- the supporter SM may be directly disposed on the upper surface of the first insulating layer 111.
- the supporter SM may be disposed under the connection line GSL to be described later to protrude the connection line GSL in the thickness direction. Due to the protruding connection wire GSL, the signal wire PAD protrudes together in the thickness direction, so that it is easy to bond with the bumps of the driving integrated circuit 300.
- the supporter SM may include an organic material or an inorganic material.
- the cross-sectional shape of the supporter SM may be a trapezoidal shape.
- the first conductive layer 120 may be disposed on the first insulating layer 111 and the supporter SM.
- the first conductive layer 120 may include the gate electrode GE of the thin film transistor TFT, the first electrode CE1 of the storage capacitor Cst, and the connection wiring GSL.
- the connection wiring GSL may be disposed while passing through the display area DA and the pad area PA.
- the first conductive layer 120 is molybdenum (Mo), aluminum (Al), platinum (Pt), palladium (Pd), silver (Ag), magnesium (Mg), gold (Au), nickel (Ni), neodymium ( Nd), iridium (Ir), chromium (Cr), calcium (Ca), titanium (Ti), tantalum (Ta), tungsten (W), may include at least one metal selected from copper (Cu).
- the first conductive layer 120 may be a single layer or a stacked layer made of the above-described material.
- connection wiring GSL covers the surface of the supporter SM and may directly contact the surface of the supporter SM. A portion of the connection wiring GSL overlapping the supporter SM in the thickness direction may protrude in the thickness direction.
- Second insulating layers 112a and 112b may be disposed on the first conductive layer 120.
- the second insulating layers 112a and 112b may insulate the first conductive layer 120 and the second conductive layer 130.
- the second insulating layer 112a may be generally disposed in the display area DA, and the second insulating layer 112b may be disposed generally in the pad area PA.
- the second insulating layers 112a and 112b may be selected from exemplified materials for the first insulating layer 111.
- the second insulating layer 112b may partially expose the connection wiring GSL.
- the second insulating layer 112b may partially cover a side surface of the connection wiring GSL, and may expose a portion and an upper surface of the remaining side surface.
- a second conductive layer 130 may be disposed on the second insulating layers 112a and 112b.
- the second conductive layer 130 may include the second electrode CE2 of the storage capacitor Cst.
- the material of the second conductive layer 130 may be selected from the exemplified materials of the first conductive layer 120 described above.
- the first electrode CE1 of the storage capacitor Cst and the second electrode CE2 of the storage capacitor Cst may form a capacitor through the second insulating layers 112a and 112b.
- a third insulating layer 113 may be disposed on the second conductive layer 130.
- the third insulating layer 113 may include at least one of the above-described exemplary materials of the first insulating layer 111.
- the third insulating layer 113 may include an organic insulating material.
- the organic insulating material may be selected from example materials of the first via layer VIA1 to be described later.
- a third conductive layer 140 may be disposed on the third insulating layer 113, the second insulating layer 112b, and the connection wiring GSL.
- the third conductive layer 140 may include a source electrode SE, a drain electrode DE, a high potential voltage electrode ELVDDE, and a signal line PAD.
- the third conductive layer 140 is molybdenum (Mo), aluminum (Al), platinum (Pt), palladium (Pd), silver (Ag), magnesium (Mg), gold (Au), nickel (Ni), neodymium ( It may contain at least one of Nd), iridium (Ir), chromium (Cr), calcium (Ca), titanium (Ti), tantalum (Ta), tungsten (W), and copper (Cu).
- the third conductive layer 140 may be a single layer made of the exemplified material.
- the third conductive layer 140 is not limited thereto, and the third conductive layer 140 may be a laminated film.
- the third conductive layer 140 may be formed in a stacked structure such as Ti/Al/Ti, Mo/Al/Mo, Mo/AlGe/Mo, and Ti/Cu.
- the third conductive layer 140 may include Ti/Al/Ti.
- the signal wiring PAD of the third conductive layer 140 is disposed to overlap with the connection wiring GSL of the first conductive layer 120 in the thickness direction, and the connection wiring is formed through the exposed portion of the second insulating layer 112b. GSL) can be electrically connected.
- the size of the signal line PAD on the plane may be larger than the size of the connection line GSL.
- the signal line PAD covers the connection line GSL on a plane, and a side surface may extend outwardly than a side surface of the connection line GSL.
- a first via layer VIA1 may be disposed on the third conductive layer 140.
- the first via layer VIA1 may include an organic insulating material.
- the organic insulating material is acrylic resin, epoxy resin, phenolic resin, polyamides resin, polyimide resin, unsaturated polyester resin ( unsaturated polyesters resin), polyphenylenethers resin, polyphenylenesulfides resin, or benzocyclobutene (BCB).
- upper structures of the third insulating layer 113 and the third conductive layer 140 may be removed or omitted from a partial area of the signal line PAD on the pad area PA. Accordingly, the omitted or removed structures may expose the signal line PAD disposed in the pad area PA.
- the driving integrated circuit 300 may include a driving substrate 310, a driving wiring 330 disposed on the driving substrate 310, and a bump disposed on the driving wiring 330.
- the bump may include a first bump 350 disposed on a surface of the driving wiring 330 and a second bump 370 disposed on the surface of the first bump 350.
- the driving substrate 310 may include at least one of the exemplified materials of the display substrate 101. It may serve to support the lower structures of the driving integrated circuit 300 of the driving substrate 310.
- the driving wiring 330 is molybdenum (Mo), aluminum (Al), platinum (Pt), palladium (Pd), silver (Ag), magnesium (Mg), gold (Au), nickel (Ni), neodymium (Nd). , Iridium (Ir), chromium (Cr), calcium (Ca), titanium (Ti), tantalum (Ta), tungsten (W), and at least one of copper (Cu).
- the driving wiring 330 may be a single layer made of the above-described material. This is not limited thereto, and the driving wiring 330 may be a laminated film.
- the bump may be bonded to the signal line PAD of the display panel 100.
- the first bump 350 is molybdenum (Mo), aluminum (Al), platinum (Pt), palladium (Pd), silver (Ag), magnesium (Mg), gold (Au), nickel (Ni), neodymium (Nd). ), iridium (Ir), chromium (Cr), calcium (Ca), titanium (Ti), tantalum (Ta), tungsten (W), and at least one of copper (Cu).
- the first bump 350 may be a single layer made of the exemplified material. This is not limited thereto, and the first bump 350 may be a laminated film.
- the second bump 370 is molybdenum (Mo), aluminum (Al), platinum (Pt), palladium (Pd), silver (Ag), magnesium (Mg), gold (Au), nickel (Ni), neodymium (Nd). ), iridium (Ir), chromium (Cr), calcium (Ca), titanium (Ti), tantalum (Ta), tungsten (W), and at least one of copper (Cu).
- the second bump 370 may be a single layer made of the exemplified material. This is not limited thereto, and the second bump 370 may be a laminated layer.
- a non-conductive member NCM may be disposed around the signal line PAD and the bump.
- the non-conductive member NCM may be disposed between the adjacent signal line PAD and the adjacent bump.
- the non-conductive member NCM may be disposed between the driving substrate 310 and the second insulating layer 112b.
- the non-conductive member (NCM) is disposed between an adjacent signal line (PAD), and between the adjacent bumps and between the signal line (PAD) and the bump before an ultrasonic bonding process described later is performed, and signal wiring during the ultrasonic bonding process
- Non-conductive members (NCM) located between the (PAD) and the bump are pushed out to a region that does not overlap with the signal wire (PAD) and the bump, and the non-conductive member (NCM) located between the adjacent signal wire (PAD) and the adjacent bump.
- the adjacent signal line PAD and the adjacent bump are disposed between an adjacent signal line (PAD), and between the adjacent bumps and between the signal line (PAD) and the bump before an ultrasonic bonding process described later is performed, and signal wiring during the ultrasonic bonding process
- Non-conductive members (NCM) located between the (PAD) and the bump are pushed out to a region that does not overlap with the signal wire (PAD) and the bump, and the non-conductive member (NCM) located between
- the non-conductive member NCM may be formed of a material having no conductivity or almost no conductivity.
- the non-conductive member (NCM) may include a non-conductive film (NCF) or a non-conductive paste (NCP).
- the bump may be directly connected to the exposed signal line PAD.
- the bump may be ultrasonically bonded to the signal line PAD.
- the second bump 370 may be directly connected to the signal line PAD and ultrasonically bonded.
- the ultrasonic bonding may be performed through the ultrasonic device 700.
- the ultrasonic device 700 includes a vibration generating unit 710, a vibration unit 720 connected to the vibration generating unit 710, a pressing unit 730 that amplifies the vibration amplitude of the vibration unit 720, and connected to the vibration unit 720. It may include a vibration transmission unit 740.
- the vibration generator 710 may convert electrical energy into vibration energy.
- the vibration unit 720 may vibrate with vibration energy converted by the vibration generation unit 710.
- the vibration unit 720 may vibrate with a certain vibration direction and a predetermined amplitude.
- the vibration unit 720 may amplify the amplitude in a direction parallel to the vibration direction through a pressing unit 730 connected to the vibration unit 720.
- the vibration transmitting unit 740 may transmit the vibration of the vibration unit 720 to the ultrasonic bonding object.
- the support part 750 may fix the upper and lower surfaces of the vibrating part 720 to prevent the vibrating part 720 and the vibration transmitting part 740 from flowing up and down due to the vibration.
- the ultrasonic device 700 contacts the other surface of the driving integrated circuit 300 and maintains a constant pressure downward, so that the vibration transmitting unit 740 efficiently transmits the vibration to the driving integrated circuit 300 Make it possible.
- the vibration transmitting unit 740 of the ultrasonic device 700 may perform ultrasonic bonding while overlapping the entire area of the driving integrated circuit 300 disposed below, as illustrated in FIG. 3.
- the ultrasonic device 700 may vibrate the bump in the vibration direction while vibrating in a predetermined vibration direction.
- the signal wire PAD may slightly vibrate in the vibration direction due to vibration transmitted through the bump, but the vibration width may be insignificant.
- the vibration width of the vibration transmission unit 740 in the vibration direction may be considered to be substantially the same as the distance the bump moves in the vibration direction on the signal line PAD.
- the vibration direction may be the second direction DR2. That is, the vibration direction may be a direction in which the signal line PAD and the long side of the bump extend.
- the bump When the bump is ultrasonically vibrated on one surface of the signal line PAD, a predetermined frictional force may be generated at an interface between one surface of the signal line PAD and one surface of the bump, and frictional heat may be generated due to the frictional force. If the frictional heat is sufficient to melt the signal wiring PAD and the material forming the bump, a pad melting area PADb adjacent to the bump of the signal wiring PAD and a bump melting area adjacent to the signal wiring PAD of the bump 370b may be melted. That is, the signal wiring PAD may include the pad non-melting area PADa and the pad melting area PADb. In addition, the bump may include a bump non-melting region 370a and a bump melting region 370b.
- the pad non-melting area PADa may be an area including only a material included in the signal line PAD.
- the bump non-melting region 370a may be a region including only a material included in the bump.
- the pad melting area PADb is an area in which the material included in the bump is diffused and the material of the signal wiring PAD and the material of the bump are mixed, and the bump melting area 370b is a material included in the signal wiring PAD
- the diffusion may be a region in which the material of the bump and the material of the signal line PAD are mixed.
- the signal wiring PAD and the bump may be combined while solidifying.
- the interface between the signal line PAD and the bump that is, the interface between the pad melting region PADb and the bump melting region 370b may have a non-flat shape.
- the vibration transmitting unit 740 of the ultrasonic device 700 makes the upper surface of the print base film 310 of the driving integrated circuit 300 third, as described above.
- the pressure is applied in the direction DR3 and vibration is applied along the second direction DR2.
- the bump disposed on the print base film 310 is coupled to the signal line PAD as described above.
- the vibration transmitting part 740 of the ultrasonic device 700 is separated from the print base film 310 in the thickness direction DR3, and the bonding force between the signal wiring PAD and the bump is determined by the bonding force between the bump and the print base.
- peeling between the bump and the print base film 310 may be prevented by disposing the first curable pattern IRP between adjacent bumps, as described later.
- the fourth conductive layer 150 may be disposed on the first via layer VIA1.
- the fourth conductive layer 150 may include a data line DL, a connection electrode CNE, and a high potential voltage line ELVDDL.
- the data line DL may be electrically connected to the source electrode SE of the thin film transistor TFT through a contact hole penetrating through the first via layer VIA1.
- the connection electrode CNE may be electrically connected to the drain electrode DE of the thin film transistor TFT through a contact hole passing through the first via layer VIA1.
- the high potential voltage line ELVDDL may be electrically connected to the high potential voltage electrode ELVDDE through a contact hole passing through the first via layer VIA1.
- the fourth conductive layer 150 may include a material selected from among exemplary materials of the third conductive layer 140.
- a second via layer VIA2 is disposed on the fourth conductive layer 150.
- the second via layer VIA2 may include at least one of the exemplified materials of the first via layer VIA1 described above.
- the anode electrode ANO is disposed on the second via layer VIA2.
- the anode electrode ANO may be electrically connected to the connection electrode CNE through a contact hole penetrating through the second via layer VIA2.
- a bank layer BANK may be disposed on the anode electrode ANO.
- the bank layer BANK may include a contact hole exposing the anode electrode ANO.
- the bank layer BANK may be made of an organic insulating material or an inorganic insulating material.
- the bank layer BANK may include at least one of a photoresist, a polyimide resin, an acrylic resin, a silicone compound, and a polyacrylic resin.
- the organic layer EL may be disposed on the upper surface of the anode electrode ANO and in the opening of the bank layer BANK.
- the cathode electrode CAT is disposed on the organic layer EL and the bank layer BANK.
- the cathode electrode CAT may be a common electrode disposed over a plurality of pixels.
- a thin film encapsulation layer 170 is disposed on the cathode electrode CAT.
- the thin film encapsulation layer 170 may cover the organic light emitting device (OLED).
- the thin film encapsulation layer 170 may be a laminated layer in which an inorganic layer and an organic layer are alternately stacked.
- the thin film encapsulation layer 170 may include a first encapsulation inorganic layer 171, an encapsulation organic layer 172, and a second encapsulation inorganic layer 173 sequentially stacked.
- FIG. 4 is a plan layout view of a pad area of a display panel according to an exemplary embodiment
- FIG. 5 is a plan layout view of a driving integrated circuit according to an exemplary embodiment
- FIG. 6 is a plan view of a pad area of a display panel to which a driving integrated circuit is attached. It is a layout view
- FIG. 7 is a partially enlarged view of FIG. 6,
- FIG. 8 is a cross-sectional view taken along line X1-X1' of FIG. 7, and
- FIG. 9 is a cross-sectional view taken along line X2-X2' of FIG. 7.
- a plurality of signal wires PAD may be provided, and a plurality of signal wires PAD may be arranged along a first direction DR1.
- the plurality of signal wires PAD may include, for example, a power pad, a data pad, and a panel dummy pad.
- the bumps 350 and 370 of the driving integrated circuit 300 may be plural, and may be arranged along the first direction DR1.
- Each of the signal wires PAD and the bumps 350 and 370 may have a rectangular shape. That is, the signal line PAD and the bumps 350 and 370 may include long sides extending along the second direction DR2 and short sides extending along the first direction DR1. A corner where the long side and the short side meet may form a right angle. However, it is not limited thereto, and the planar shape of the signal line PAD and the bumps 350 and 370 may be square, circular, elliptical, or other polygons.
- planar size of the signal wire PAD and the bumps 350 and 370 may be substantially the same as each other, but is not limited thereto, and the planar size of the signal wire PAD is greater than the planar size of the bumps 350 and 370. It could be large, and vice versa.
- connection wiring GSL may be disposed from the display area DA to the pad area PA, and in the area overlapping the signal line PAD of the pad area PA, the first direction ( DR1) can have a wider shape.
- the size of the signal line PAD may be larger than the size of the connection line GSL and the supporter SM.
- the signal line PAD may be disposed to overlap the connection line GSL and the supporter SM in the thickness direction.
- the planar size of the supporter SM may be smaller than the planar size of the connection wiring GSL.
- the planar shape of the supporter SM may be a rectangular shape, but the planar shape of the supporter SM is not limited thereto, and a square, circular, elliptical, or other polygon may be applied.
- the driving wiring 330 may be disposed to extend from an end portion of the display panel 100 under the second direction DR2 to the pad area PA.
- the driving wiring 330 may have a shape whose width is extended in the first direction DR1 in a region overlapping the signal wiring PAD and the bumps 350 and 370 in the thickness direction.
- a planar shape of the driving wire 330 may be rectangular. That is, in the region, the driving wiring 330 may include short sides extending along the first direction DR1 and long sides extending along the second direction DR2, and the edge where the short side meets the long side is It can be keratin.
- the planar shape of the driving wiring 330 may be square, circular, elliptical, or other polygonal shape.
- the planar size of the driving wiring 330 may be substantially the same as the planar size of the above-described connection wiring GSL. However, the present invention is not limited thereto, and a planar size of the driving wiring 330 may be smaller or larger than a planar size of the connection wiring GSL.
- the bumps 350 and 370 may be disposed to overlap with the signal line PAD and the driving line 330 in the thickness direction.
- the size of the bumps 350 and 370 on the plane may be substantially the same as the size of the signal line PAD.
- the size of the bumps 350 and 370 on the plane may be larger than the size of the driving line 330 on the plane.
- the supporter SM may be covered by a connection line GSL disposed thereon. As shown in FIG. 9, when the supporter SM is applied in a trapezoidal shape, the supporter SM may include an upper surface, a lower surface, and side surfaces.
- the connection wiring GSL may be disposed on the upper surface and side surfaces of the supporter SM.
- the lower surface of the supporter SM may directly contact the first insulating layer 111.
- the upper and side surfaces of the supporter SM may be covered by the connection wiring GSL and may directly contact them.
- the connection wiring GSL may be formed along the surface of the supporter SM according to the shape of the supporter SM.
- the thickness of the connection wiring GSL may be generally the same. That is, the thickness of the portion disposed on the upper surface of the supporter SM of the connection line GSL and the portion disposed on the side surface of the supporter SM of the connection line GSL may be substantially the same.
- the surface of the connection wiring GSL may include an inner surface and an outer surface.
- the outer surface of the connection wiring GSL includes an upper surface GSLa1 and outer surfaces GSLa2 and GSLa3, and the inner surface of the connection wiring GSL includes a lower surface GSLb1, and inner surfaces GSLb2 and GSLb3. can do.
- the lower surface GSLb1 of the connection wiring GSL may directly contact the upper surface of the supporter SM.
- the inner surfaces GSLb2 and GSLb3 of the connection line GSL may directly contact side surfaces of the supporter SM.
- a second insulating layer 112b may be further disposed on the side surface of the connection line GSL.
- the second insulating layer 112b may directly contact the upper surface of the first insulating layer 111 exposed by the supporter SM and the connection wiring GSL.
- the second insulating layer 112b may be disposed on the outer surfaces GSLa2 and GSLa3 of the connection wiring GSL.
- the second insulating layer 112b may expose upper ends of the outer surfaces GSLa2 and GSLa3 of the connection wiring GSL and cover the lower ends.
- the second insulating layer 112b may directly contact lower ends of the outer surfaces GSLa2 and GSLa3 of the connection wiring GSL.
- the signal line PAD may be disposed on the second insulating layer 112b and the connection line GSL.
- the signal line PAD may be disposed on the top and side surfaces of the connection line GSL.
- the thickness of the signal wiring PAD may be generally the same. That is, the thickness of the portion disposed on the upper surface of the connection line GSL of the signal line PAD and the thickness of the portion disposed on the side surface of the connection line GSL of the signal line PAD may be substantially the same. .
- the surface of the signal wiring PAD may include an inner surface and an outer surface.
- the inner surface of the signal wiring PAD includes a first upper surface PADa1, a second upper surface PADa3, and an outer surface PADa2 disposed between the first upper surface PADa1 and the second upper surface PADa3 to connect them.
- the outer surface of the signal wire PAD is disposed between the first lower surface PADb1, the second lower surface PADb3, and the first lower surface PADb1 and the second lower surface PADb3, and an inner surface PADb2 connecting them. It may include.
- the second upper surface PADa3 and the outer surface PADa2 may be further located in opposite directions symmetrically with respect to the first upper surface PADa1.
- the second lower surface PADb3 and the inner surface PADb2 may be further located in opposite directions symmetrically with respect to the first lower surface PADb1.
- the first lower surface PADb1 of the signal line PAD may be positioned to protrude upward in the thickness direction than the second lower surface PADb3.
- the first upper surface PADa1 of the signal line PAD may be positioned to protrude upward in the thickness direction than the second upper surface PADa3.
- the first lower surface PADb1 of the signal wiring PAD directly contacts the upper surface PADb1 of the connection wiring GSL, and the inner surface PADb2 of the signal wiring PAD is a second insulating layer ( The upper end of the outer surface GSLa2 exposed by 112b may be in contact, and the second lower surface PADb3 of the signal line PAD may directly contact the upper surface of the second insulating layer 112b.
- the first upper surface PADa1, the second upper surface PADa3, and the outer surface PADa2 of the signal line PAD may contact the bump.
- the surface of the second bump 370 may include an outer surface facing the signal line PAD.
- the outer surface of the second bump 370 is disposed between the first lower surface 370a1, the second lower surface 370a3, and the first lower surface 370a1 and the second lower surface 370a3, and an outer surface 370a2 that physically connects them. ) Can be included.
- the second lower surface 370a3 and the outer surface 370a2 may be further positioned in opposite directions symmetrically with respect to the first lower surface 370a1.
- the first lower surface 370a1 of the second bump 370 may be positioned to be indented upward in a thickness direction than the second lower surface 370a3.
- the first lower surface 370a1 of the second bump 370 directly contacts the first upper surface PADa1 of the signal line PAD, and the second lower surface 370a3 of the second bump 370 is formed of the signal line PAD.
- the second upper surface PADa3 is in direct contact, and the outer surface 370a2 of the second bump 370 may directly contact the outer surface PADa2 of the signal line PAD.
- the first lower surface 370a1 and the first upper surface PADa1, the second lower surface 370a3 and the second upper surface PADa3, and the outer surface 370a2 and the outer surface PADa2 may be directly connected as described above. .
- the first lower surface 370a1 and the first upper surface PADa1, the second lower surface 370a3 and the second upper surface PADa3, and the outer surface 370a2 and the outer surface PADa2 may be ultrasonically connected or ultrasonically bonded to each other. .
- the surface of the signal wiring PAD is the lower connection wiring GSL and the second insulating layer 112b between the first insulating layer 111 and the connection wiring GSL.
- a supporter (SM) is placed to protrude the surface of the central portion of the connection wiring (GSL) in the thickness direction, and the surface of the central portion of the signal wiring (PAD) arranged along the surface of the connecting wiring (GSL) protrudes in the thickness direction. I can make it.
- the signal wiring PAD having a shape in which the surface of the center portion protrudes in the thickness direction may mesh with the shape of the second bump 370 of the driving integrated circuit 300.
- the signal wiring PAD is disposed on a first portion (center portion) having a first surface height and one side and the other side of the first portion in the first direction DR1, and is smaller than the first surface height.
- the second bump 370 includes a first portion (center portion) having a third surface height and one side of the first direction DR1 and the other side of the first portion It may include a second portion (border portion) disposed on and having a fourth surface height greater than the third surface height.
- the protruding first portion of the signal line PAD is combined with the indented first portion of the second bump 370, and the indented second portion of the signal line PAD is the protruding first portion of the second bump 370.
- NCM non-conductive member
- FIG. 10 is a flowchart illustrating a method of manufacturing a display device according to an exemplary embodiment
- FIGS. 11 and 12 are cross-sectional views of a method of manufacturing a display device according to an exemplary embodiment
- FIG. 13 is a diagram illustrating a display device according to another exemplary embodiment.
- Step-by-step cross-sectional views of a manufacturing method FIGS. 14 and 15 are cross-sectional views of a method of manufacturing a display device according to another exemplary embodiment
- FIGS. 16 and 17 are cross-sectional views of a method of manufacturing a display device according to another exemplary embodiment.
- Step-by-step cross-sectional view, and FIG. 18 is a step-by-step cross-sectional view of a method of manufacturing a display device according to an exemplary embodiment.
- a supporter is formed on the display substrate 101 or the base substrate (S10).
- the supporter SM may be disposed on the first insulating layer 111.
- the supporter SM may be directly disposed on the upper surface of the first insulating layer 111.
- the supporter SM may be disposed under the above-described connection wire GSL to protrude the connection wire GSL in the thickness direction. Due to the protruding connection wire GSL, the signal wire PAD protrudes together in the thickness direction, so that it is easy to bond with the bumps of the driving integrated circuit 300.
- the supporter SM may include an organic material or an inorganic material.
- the cross-sectional shape of the supporter SM may be a trapezoidal shape.
- FIGS. 12 to 17 various methods of forming the supporter SM are described.
- the forming of the supporter on the display substrate 101 or the base substrate (S10) may further include forming the supporter SM through a photolithography process.
- Forming the supporter SM through a photolithography process includes applying a supporter material SMa on the first insulating layer 111, and the supporter material SMa applied on the first insulating layer 111 It may further include irradiating with an ultraviolet (UV) laser, and forming the supporter SM by developing the supporter material SMa irradiated with the ultraviolet laser.
- the mask MASK shown in FIG. 13 is disposed in a region other than the supporter SM formation region, It may further include the step of irradiating the supporter material with an ultraviolet laser.
- the forming of the supporter on the display substrate 101 or the base substrate (S10) may further include forming the supporter SM through a squeezing process.
- the forming of the supporter SM through the squeezing process includes disposing the masking pattern MK on the first insulating layer 111 in a region other than the supporter arrangement region, and a squeezing device with the supporter material SMb. Filling the supporter material SMb on the first insulating layer 111 exposed by the masking pattern MK by pushing through, and removing the masking pattern MK from the first insulating layer 111, and the first insulating layer It may further include the step of curing the supporter material (SMb) formed on the upper surface of (111).
- forming the supporter on the display substrate 101 or the base substrate (S10) may further include forming the supporter SM through an inkjet process.
- the forming of the supporter SM through the inkjet process includes applying a supporter material SMc1 on the first insulating layer 111 through an inkjet device, and the supporter material applied on the first insulating layer 111 It may include the step of forming the supporter (SM) by curing (SMc1).
- connection wiring GSL is formed on the supporter SM (S20).
- Connection wiring (GSL) is molybdenum (Mo), aluminum (Al), platinum (Pt), palladium (Pd), silver (Ag), magnesium (Mg), gold (Au), nickel (Ni), neodymium (Nd) , Iridium (Ir), chromium (Cr), calcium (Ca), titanium (Ti), tantalum (Ta), tungsten (W), may include one or more metals selected from copper (Cu).
- the connection wiring GSL may be a single layer or a stacked layer made of the above-described material.
- connection wiring GSL may be formed to cover the surface of the supporter SM and directly contact the surface of the supporter SM. A portion of the connection wiring GSL overlapping the supporter SM in the thickness direction may protrude in the thickness direction.
- connection line GSL is formed by covering the connection line GSL on the connection line GSL (S30).
- FIG. 19 is a cross-sectional view of a pad area of a display device according to another exemplary embodiment
- FIG. 20 is a cross-sectional view of a pad area of a display device according to another exemplary embodiment
- FIG. 21 is a cross-sectional view of a pad area of a display device according to another exemplary embodiment
- 22 is a cross-sectional view of a pad area of a display device according to another exemplary embodiment
- FIG. 23 is a cross-sectional view of a pad area of a display device according to another exemplary embodiment.
- 19 to 23 illustrate various cross-sectional shapes of the support SM.
- the cross-sectional shape of the support SM_1 may be applied as a triangle.
- the cross-sectional shape of the support SM_2 may be applied in a pentagon shape.
- the cross-sectional shape of the support SM_3 can be applied as a semicircle.
- the cross-sectional shape of the support SM_4 can be applied as a semi-ellipse.
- the cross-sectional shape of the support SM_5 may be applied in a square shape.
- 24 is a plan layout diagram of a pad area of a display panel to which a driving integrated circuit is attached according to another exemplary embodiment.
- the support SM_6 has a line shape extending along a long side direction of the signal line PAD, and the support SM_6 having a line shape may include a plurality of patterns. It differs from the support SM according to FIG. 7 in that.
- the support SM_6 has a line shape extending along a long side direction or a column direction of the signal line PAD, and the support SM_6 having a line shape includes a plurality of patterns. can do.
- the plurality of line-shaped patterns may be disposed to be spaced apart along the short side direction of the signal line PAD. Although illustrated as having three patterns in FIG. 24, the present invention is not limited thereto, and there may be two or four or more line-shaped patterns.
- 25 is a plan layout diagram of a pad area of a display panel to which a driving integrated circuit is attached according to another exemplary embodiment.
- the support SM_7 according to the present embodiment has a line shape extending along the short side direction or the row direction of the signal line PAD, and the support SM_7 having a line shape includes a plurality of patterns. It is different from the support SM according to FIG. 7 in that it can be.
- the support SM_7 may have a line shape extending along a short side direction of the signal line PAD, and the support SM_7 having a line shape may include a plurality of patterns. .
- a plurality of line-shaped patterns may be disposed to be spaced apart along the long side direction of the signal line PAD. Although shown as having 6 patterns in FIG. 25, the number of patterns in a line shape is not limited thereto, and may be 2, 3, 4, 5, or 7 or more patterns.
- 26 is a plan layout view of a pad area of a display panel to which a driving integrated circuit is attached according to another exemplary embodiment.
- the support SM_8 according to the present embodiment is different from the support SM according to FIG. 7 in that it has a lattice shape extending along the long side direction and the short side direction of the signal line PAD. .
- the support SM_8 may have a lattice shape extending along a long side direction and a short side direction of the signal line PAD.
- FIG. 27 is a plan layout diagram of a pad area of a display panel to which a driving integrated circuit is attached according to another exemplary embodiment.
- the support SM_9 according to the present embodiment is different from the support SM according to FIG. 7 in that it includes a plurality of patterns having an island or island shape.
- the support SM_9 may include a plurality of patterns having an island or island shape.
- a plurality of island-shaped patterns may be arranged along a long side direction and a short side direction of the signal line PAD, and a plurality of adjacent patterns may be disposed to be spaced apart from each other.
- FIG. 27 a plurality of patterns arranged in three columns along a long side direction of the signal line PAD and six rows along a short side direction of the signal line PAD are illustrated, but the present invention is not limited thereto.
- a trapezoidal shape of FIG. 9 may be applied as a cross-sectional shape, and a hexahedral shape having a trapezoidal cross-sectional shape may be applied.
- FIG. 28 is a diagram illustrating modified examples of a supporter according to an embodiment.
- the supporter SM_9a may be applied as a rectangular parallelepiped SM_9a having a rectangular cross-sectional shape.
- the supporter SM_9b may be applied in a conical shape having a triangular cross-sectional shape.
- the supporter SM_9c may be applied in the form of a square pyramid having a square bottom surface and a triangle side surface.
- the supporter SM_9d may be applied in the form of a pentagonal pyramid having a pentagonal bottom surface and a triangular side surface.
- the supporter SM_9e has a circular bottom and a top surface, and may be applied in a truncated cone shape in which the area of the bottom surface is larger than the area of the top surface.
- the supporter SM_9f may have a pentagonal shape on a bottom and a top surface, and a pentagonal frustum shape in which the area of the bottom surface is larger than the area of the top surface.
- the supporter SM_9g has a circular bottom surface and a top surface, and may be applied in a cylindrical shape in which the area of the bottom surface and the area of the top surface are the same.
- the supporter SM_9h according to the present embodiment may be applied in a plate shape.
- the supporter SM_9i may be applied in a hemispherical shape.
- the supporter SM_9j may be applied in a vertical shape.
- FIG. 29 is a plan layout diagram of a pad area of a display panel to which a driving integrated circuit is attached according to another exemplary embodiment
- FIG. 30 is a cross-sectional view of a pad area of a display device according to another exemplary embodiment.
- connection wire GSL2 is further disposed between the connection wire GSL_1 and the signal wire PAD, and the supporter SM is omitted. It is different from the embodiment according to FIG. 9.
- the size of the second connection line GSL2 on the plane may be smaller than the size of the connection line GSL_1 on the plane.
- a rectangle may be applied as the planar shape of the second connection wiring (GSL2), but it is not limited thereto.
- the second connection wire GSL2 may be directly disposed on the upper surface of the connection wire GSL_1.
- the signal wire PAD is directly on the upper surface of the second insulating layer 112b, the second connection wire GSL2, and the connection wire GSL_1 exposed by the second connection wire GSL2 and the second insulating layer 112b. Arranged and accessible.
- the second connection wiring GSL2 may be disposed on the same layer as the second conductive layer 130 described above in FIG. 3.
- the second connection wiring GSL2 may include at least one of the exemplified materials of the second conductive layer 130.
- FIG. 31 is a plan layout view of a pad area of a display panel to which a driving integrated circuit is attached according to another exemplary embodiment
- FIG. 32 is a cross-sectional view of a pad area of a display device according to another exemplary embodiment.
- the supporter SM is omitted and the connection wiring GSL_2 is different from the exemplary embodiment of FIGS. 7 and 9 in that portions having different thicknesses are included.
- the connection wiring GSL_2 may include a first portion or a central portion having a first thickness, a second portion having a second thickness smaller than the first thickness, and a third portion.
- the second part and the third part may be respectively located on one side and the other side of the first direction DR1 of the first part.
- a surface of the first portion of the connection wiring GSL_2 may protrude in a thickness direction than a surface of the second portion and a surface of the third portion.
- a central portion of the signal line PAD overlapping the first portion of the connection line GSL_2 may protrude in the thickness direction.
- FIGS. 31 and 32 are cross-sectional views of the connection wiring according to FIGS. 31 and 32 in each step.
- connection wiring material GSLa is deposited on the first insulating layer 111.
- the connection wiring material GSLa may include at least one of the exemplified materials of the connection wiring GSL described above in FIG. 3.
- a mask MASK is disposed on the connection wiring material GSLa in the region where the connection wiring GSL_2 is to be formed, and the connection wiring material GSLa disposed non-overlapping with the mask MASK is disposed.
- Etch. Etching the mask (MASK) and the non-overlapping connection wiring material (GSLa) may include dry etching the mask (MASK) and the non-overlapping connection wiring material (GSLa), or the non-overlapping arrangement with the mask (MASK). It may include wet etching the connection wiring material GSLa.
- a mask is disposed on the first portion of the connection line GSL_2 and a non-overlapping area with the connection line GSL_2, and the area where the mask MASK is exposed is etched.
- the first to third portions of the connection wiring GSL_2 are formed.
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Abstract
Description
Claims (32)
- 표시 영역 및 상기 표시 영역 주변에 배치된 패드 영역이 정의된 표시 기판;상기 표시 기판의 상기 패드 영역 상에 배치된 연결 배선;상기 연결 배선 상에 배치된 신호 배선; 및상기 표시 기판과 상기 연결 배선 사이에 배치된 서포터를 포함하고,상기 연결 배선은 상기 서포터와 직접 접하는 표시 패널.
- 제1 항에 있어서,상기 연결 배선의 평면상 크기는 상기 서포터의 평면상 크기보다 크고, 상기 연결 배선은 상기 서포터를 커버하는 표시 패널.
- 제2 항에 있어서,상기 신호 배선의 평면상 크기는 상기 연결 배선의 평면상 크기보다 크고, 상기 신호 배선은 상기 연결 배선과 직접 접하는 표시 패널.
- 제3 항에 있어서,상기 표시 기판과 상기 신호 배선 사이에 배치된 절연층을 더 포함하고, 상기 절연층은 상기 연결 배선의 측면을 덮고, 상면을 노출하는 표시 패널.
- 제4 항에 있어서,상기 신호 배선은 상기 절연층의 상면과 직접 접하는 표시 패널.
- 제1 항에 있어서,상기 서포터의 단면 형상은 사다리꼴, 삼격형, 오각형, 반원, 반타원, 또는 사각 형상 중 적어도 하나를 포함하는 표시 패널.
- 제1 항에 있어서,상기 서포터는 상기 신호 배선의 장변 방향을 따라 연장된 패턴을 포함하고, 상기 서포터의 패턴은 복수이고, 상기 복수의 서포터의 패턴은 상기 신호 배선의 단변 반향을 따라 이격되어 배치된 표시 패널.
- 제1 항에 있어서,상기 서포터는 상기 신호 배선의 단변 방향을 따라 연장된 패턴을 포함하고,상기 서포터의 패턴은 복수이고,상기 복수의 서포터의 패턴은 상기 신호 배선의 장변 반향을 따라 이격되어 배치된 표시 패널.
- 제1 항에 있어서,상기 서포터는 평면상 상기 신호 배선의 장변 방향 및 단변 방향을 따라 연장된 격자 형상을 갖는 표시 패널.
- 제1 항에 있어서,상기 서포터는 평면상 상기 신호 배선의 장변 방향 및 단변 방향을 따라 이격되어 배치된 복수의 섬 형상을 갖는 표시 패널.
- 제1 항에 있어서,상기 연결 배선은 복수이고, 상기 복수의 연결 배선 사이에 배치된 비도전성 필름 또는 비도전성 결합제를 더 포함하는 표시 패널.
- 표시 영역 및 상기 표시 영역 주변에 배치된 패드 영역이 정의된 표시 기판;상기 표시 기판의 상기 패드 영역 상에 배치된 제1 연결 배선; 및상기 제1 연결 배선 상에 배치된 신호 배선을 포함하고,상기 제1 연결 배선은 제1 부분, 상기 제1 부분의 일측에 배치된 제2 부분, 및 상기 제1 부분의 타측에 배치된 제3 부분을 포함하고,상기 제1 부분의 표면 높이는 상기 제2 부분의 표면 높이, 및 상기 제3 부분의 표면 높이보다 큰 표시 패널.
- 제12 항에 있어서,상기 제1 연결 배선은 상기 신호 배선의 제1 부분과 중첩 배치된 제4 부분, 상기 신호 배선의 제2 부분과 중첩 배치된 제5 부분, 및 상기 신호 배선의 제3 부분과 중첩 배치된 제6 부분을 포함하고,상기 제4 부분의 두께는 상기 제5 부분, 및 상기 제6 부분의 두께보다 큰 표시 패널.
- 제12 항에 있어서,상기 제1 연결 배선과 상기 신호 배선 사이에 배치된 제2 연결 배선을 더 포함하고,상기 제2 연결 배선의 평면상 크기는 상기 제1 연결 배선, 및 상기 신호 배선의 평면상 크기보다 작고,상기 제2 연결 배선은 상기 신호 배선의 상기 제1 부분과 두께 방향으로 중첩 배치된 표시 패널.
- 표시 영역 및 상기 표시 영역 주변에 배치된 패드 영역이 정의된 표시 기판,상기 표시 기판의 상기 패드 영역 상에 배치된 연결 배선,상기 연결 배선 상에 배치된 신호 배선, 및상기 표시 기판과 상기 연결 배선 사이에 배치된 서포터를 포함하는 표시 패널; 및상기 표시 기판의 상기 패드 영역 상에 부착되고, 상기 신호 배선과 접속되는 범프를 포함하는 구동 집적 회로를 포함하고,상기 연결 배선은 상기 서포터와 직접 접하는 표시 장치.
- 제15항에 있어서,상기 연결 배선의 평면상 크기는 상기 서포터의 평면상 크기보다 크고, 상기 연결 배선은 상기 서포터를 커버하는 표시 장치.
- 제15항에 있어서,상기 신호 배선의 평면상 크기는 상기 연결 배선의 평면상 크기보다 크고, 상기 신호 배선은 상기 연결 배선과 직접 접하는 표시 장치.
- 제17 항에 있어서,상기 표시 기판과 상기 신호 배선 사이에 배치된 절연층을 더 포함하고, 상기 절연층은 상기 연결 배선의 측면을 덮고, 상면을 노출하는 표시 장치.
- 제18항에 있어서,상기 신호 배선은 상기 절연층의 상면과 직접 접하는 표시 장치.
- 제17 항에 있어서,상기 신호 배선은 상기 서포터와 중첩 배치된 제1 부분, 상기 서포터와 비중첩 배치되고 상기 제1 부분의 일측에 위치한 제2 부분, 및 상기 서포터와 비중첩 배치되고 상기 제1 부분의 타측에 위치한 제3 부분을 포함하고, 상기 제1 부분의 상면은 상기 제2 부분의 상면, 및 상기 제3 부분의 상면보다 두께 방향으로 돌출된 표시 장치.
- 제20 항에 있어서,상기 구동 집적 회로는 구동 기판, 및 상기 구동 기판 상에 배치된 구동 배선을 더 포함하고, 상기 범프는 상기 구동 배선 상에 배치되고 상기 구동 배선과 연결된 표시 장치.
- 제21 항에 있어서,상기 범프는 제1 부분, 상기 제1 부분의 일측에 배치된 제2 부분, 및 상기 제1 부분의 타측에 배치된 제3 부분을 포함하고, 상기 제1 부분의 표면은 상기 제2 부분의 표면, 및 상기 제3 부분의 표면보다 두께 방향으로 만입된 표시 장치.
- 제22 항에 있어서,상기 신호 배선의 제1 부분은 상기 범프의 제1 부분과 접속되고, 상기 신호 배선의 제2 부분은 상기 범프의 제2 부분과 접속되고, 상기 신호 배선의 제3 부분은 상기 범프의 제3 부분과 접속된 표시 장치.
- 제21 항에 있어서,상기 범프는 상기 신호 배선과 직접 접속된 표시 장치.
- 제24 항에 있어서,상기 범프는 상기 신호 배선과 초음파 접속된 표시 장치.
- 베이스 기판 상에 서포터를 형성하는 단계;상기 서포터 상에 연결 배선을 형성하는 단계; 및상기 연결 배선 상에 상기 연결 배선을 커버하고 상기 연결 배선과 전기적으로 연결된 신호 배선을 형성하는 단계를 포함하되,상기 연결 배선은 상기 서포터를 커버하고, 직접 접하는 표시 장치의 제조 방법.
- 제26 항에 있어서,상기 베이스 기판 상에 서포터를 형성하는 단계는 포토리소그래피 공정, 잉크젯 공정, 또는 스퀴징 공정을 통해 상기 서포터를 형성하는 단계를 더 포함하는 표시 장치의 제조 방법.
- 제26 항에 있어서,상기 신호 배선을 형성한 후에 상기 신호 배선 상에 구동 집적 회로를 부착하는 단계를 더 포함하는 표시 장치의 제조 방법.
- 제28 항에 있어서,상기 구동 집적 회로를 부착하는 단계는 범프를 상기 신호 배선에 직접 접속하는 단계를 포함하는 표시 장치의 제조 방법.
- 제29 항에 있어서,상기 신호 배선은 상기 서포터와 중첩 배치된 제1 부분, 상기 서포터와 비중첩 배치되고 상기 제1 부분의 일측에 위치한 제2 부분, 및 상기 서포터와 비중첩 배치되고 상기 제1 부분의 타측에 위치한 제3 부분을 포함하고, 상기 제1 부분의 상면은 상기 제2 부분의 상면, 및 상기 제3 부분의 상면보다 두께 방향으로 돌출된 표시 장치의 제조 방법.
- 제30 항에 있어서,상기 범프는 제1 부분, 상기 제1 부분의 일측에 배치된 제2 부분, 및 상기 제1 부분의 타측에 배치된 제3 부분을 포함하고, 상기 제1 부분의 표면은 상기 제2 부분의 표면, 및 상기 제3 부분의 표면보다 두께 방향으로 만입된 표시 장치의 제조 방법.
- 제31 항에 있어서,상기 신호 배선의 제1 부분은 상기 범프의 제1 부분과 접속되고,상기 신호 배선의 제2 부분은 상기 범프의 제2 부분과 접속되고,상기 신호 배선의 제3 부분은 상기 범프의 제3 부분과 접속된 표시 장치의 제조 방법.
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| EP20840013.5A EP3998636A4 (en) | 2019-07-12 | 2020-06-26 | Display device and method for manufacturing display device |
| JP2022501069A JP7619999B2 (ja) | 2019-07-12 | 2020-06-26 | 表示パネル、表示装置および表示装置の製造方法 |
| CN202080051032.8A CN114097091A (zh) | 2019-07-12 | 2020-06-26 | 显示装置和用于制造显示装置的方法 |
| US17/626,198 US12527083B2 (en) | 2019-07-12 | 2020-06-26 | Display device including connection wire and method for manufacturing the same |
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| KR1020190084765A KR102843099B1 (ko) | 2019-07-12 | 2019-07-12 | 표시 장치 및 표시 장치의 제조 방법 |
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| EP (1) | EP3998636A4 (ko) |
| JP (1) | JP7619999B2 (ko) |
| KR (1) | KR102843099B1 (ko) |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2023012914A1 (ja) * | 2021-08-03 | 2023-02-09 | 株式会社Nttドコモ | 端末および無線通信方法 |
Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR102670113B1 (ko) * | 2019-05-07 | 2024-05-30 | 삼성디스플레이 주식회사 | 화소 회로 및 이를 포함하는 표시 장치 |
| KR102855232B1 (ko) | 2021-05-20 | 2025-09-08 | 삼성디스플레이 주식회사 | 표시 패널 및 이를 포함하는 표시 장치 |
| KR102860690B1 (ko) * | 2021-12-29 | 2025-09-16 | 주식회사 엘시텍 | 표시 장치 및 그 제조 방법 |
| US20250126990A1 (en) * | 2022-08-19 | 2025-04-17 | Yunnan Invensight Optoelectronics Technology Co., Ltd. | Display Substrate and Preparation Method thereof, and Display Device |
| CN121281379A (zh) * | 2024-06-06 | 2026-01-06 | 天马新型显示技术研究院(厦门)有限公司 | 一种显示面板和显示装置 |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20060146214A1 (en) * | 2002-12-09 | 2006-07-06 | Seong-Yong Hwang | Thin film transistor substrate, method of manufacturing the same, liquid crystal display apparatus having the same and method of manufacturing the liquid crystal display apparatus |
| US20070290306A1 (en) * | 2006-06-19 | 2007-12-20 | Shinko Electric Industries Co., Ltd. | Wiring substrate and manufacturing method thereof, and semiconductor apparatus |
| KR20170038406A (ko) * | 2015-09-30 | 2017-04-07 | 엘지디스플레이 주식회사 | 디스플레이 장치 |
| KR20170081052A (ko) * | 2015-12-31 | 2017-07-11 | 엘지디스플레이 주식회사 | 패드부 전극 구조 및 이를 갖는 표시 장치 |
| KR20180000046A (ko) * | 2016-06-21 | 2018-01-02 | 삼성디스플레이 주식회사 | 디스플레이 장치 및 이의 제조 방법 |
Family Cites Families (26)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH06177214A (ja) | 1992-05-13 | 1994-06-24 | Fujitsu Ltd | 圧着端子とその接続方法および半導体装置の実装方法 |
| JP3498634B2 (ja) | 1999-05-31 | 2004-02-16 | 関西日本電気株式会社 | 半導体装置の製造方法 |
| US20040099959A1 (en) | 2002-11-22 | 2004-05-27 | Hannstar Display Corp. | Conductive bump structure |
| JP2005070360A (ja) * | 2003-08-22 | 2005-03-17 | Sony Corp | 電気回路基板 |
| JP2008116795A (ja) | 2006-11-07 | 2008-05-22 | Mitsubishi Electric Corp | 表示装置 |
| JP4293563B2 (ja) * | 2006-11-28 | 2009-07-08 | Okiセミコンダクタ株式会社 | 半導体装置及び半導体パッケージ |
| JP2008277647A (ja) * | 2007-05-02 | 2008-11-13 | Epson Imaging Devices Corp | 実装構造体及び電子機器 |
| JP2008277646A (ja) | 2007-05-02 | 2008-11-13 | Epson Imaging Devices Corp | 電気光学装置用基板、実装構造体及び電子機器 |
| JP2009162888A (ja) * | 2007-12-28 | 2009-07-23 | Kyocera Corp | 半導体素子の実装構造体および画像表示装置 |
| JP5324121B2 (ja) | 2008-04-07 | 2013-10-23 | ルネサスエレクトロニクス株式会社 | 半導体装置の製造方法 |
| US8642469B2 (en) * | 2011-02-21 | 2014-02-04 | Stats Chippac, Ltd. | Semiconductor device and method of forming multi-layered UBM with intermediate insulating buffer layer to reduce stress for semiconductor wafer |
| KR102248876B1 (ko) | 2014-12-24 | 2021-05-07 | 엘지디스플레이 주식회사 | 표시장치 어레이 기판 및 표시장치 |
| KR102411327B1 (ko) * | 2015-01-02 | 2022-06-21 | 삼성디스플레이 주식회사 | 표시 장치 |
| KR102317553B1 (ko) * | 2015-08-28 | 2021-10-25 | 엘지디스플레이 주식회사 | 유기 발광 표시 장치 |
| JP6663249B2 (ja) * | 2016-02-26 | 2020-03-11 | 株式会社ジャパンディスプレイ | 表示装置 |
| TWI740908B (zh) | 2016-03-11 | 2021-10-01 | 南韓商三星顯示器有限公司 | 顯示設備 |
| KR102624624B1 (ko) | 2016-06-15 | 2024-01-12 | 삼성디스플레이 주식회사 | 집적 회로 및 그 제조 방법 |
| KR102600926B1 (ko) * | 2016-08-24 | 2023-11-14 | 삼성디스플레이 주식회사 | 반도체 칩, 표시패널 및 전자장치 |
| KR101951939B1 (ko) * | 2016-08-26 | 2019-02-25 | 엘지디스플레이 주식회사 | 표시장치 |
| KR102627991B1 (ko) | 2016-09-02 | 2024-01-24 | 삼성디스플레이 주식회사 | 반도체 칩, 이를 구비한 전자장치 및 반도체 칩의 연결방법 |
| KR102658923B1 (ko) | 2016-09-12 | 2024-04-18 | 삼성전자주식회사 | 반도체 장치 및 반도체 패키지 |
| KR102849523B1 (ko) | 2016-12-16 | 2025-08-26 | 삼성디스플레이 주식회사 | 기판, 전자 장치 및 이를 구비하는 표시 장치 |
| KR102438256B1 (ko) | 2017-06-07 | 2022-08-30 | 엘지디스플레이 주식회사 | 터치 스크린을 갖는 유기 발광 표시 장치 및 이의 제조 방법 |
| KR102408164B1 (ko) * | 2017-10-31 | 2022-06-10 | 엘지디스플레이 주식회사 | 표시 장치 및 그의 제조방법 |
| JP7109982B2 (ja) * | 2018-04-27 | 2022-08-01 | 株式会社ジャパンディスプレイ | 表示装置 |
| US11581386B2 (en) * | 2020-06-24 | 2023-02-14 | Wuhan China Star Optoelectronics Semiconductor Display Technology Co., Ltd. | Display panel and display device |
-
2019
- 2019-07-12 KR KR1020190084765A patent/KR102843099B1/ko active Active
-
2020
- 2020-06-26 EP EP20840013.5A patent/EP3998636A4/en active Pending
- 2020-06-26 US US17/626,198 patent/US12527083B2/en active Active
- 2020-06-26 WO PCT/KR2020/008404 patent/WO2021010616A1/ko not_active Ceased
- 2020-06-26 JP JP2022501069A patent/JP7619999B2/ja active Active
- 2020-06-26 CN CN202080051032.8A patent/CN114097091A/zh active Pending
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20060146214A1 (en) * | 2002-12-09 | 2006-07-06 | Seong-Yong Hwang | Thin film transistor substrate, method of manufacturing the same, liquid crystal display apparatus having the same and method of manufacturing the liquid crystal display apparatus |
| US20070290306A1 (en) * | 2006-06-19 | 2007-12-20 | Shinko Electric Industries Co., Ltd. | Wiring substrate and manufacturing method thereof, and semiconductor apparatus |
| KR20170038406A (ko) * | 2015-09-30 | 2017-04-07 | 엘지디스플레이 주식회사 | 디스플레이 장치 |
| KR20170081052A (ko) * | 2015-12-31 | 2017-07-11 | 엘지디스플레이 주식회사 | 패드부 전극 구조 및 이를 갖는 표시 장치 |
| KR20180000046A (ko) * | 2016-06-21 | 2018-01-02 | 삼성디스플레이 주식회사 | 디스플레이 장치 및 이의 제조 방법 |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2023012914A1 (ja) * | 2021-08-03 | 2023-02-09 | 株式会社Nttドコモ | 端末および無線通信方法 |
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| Publication number | Publication date |
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| EP3998636A1 (en) | 2022-05-18 |
| EP3998636A4 (en) | 2023-08-30 |
| JP2022540193A (ja) | 2022-09-14 |
| JP7619999B2 (ja) | 2025-01-22 |
| US20220278088A1 (en) | 2022-09-01 |
| KR20210008277A (ko) | 2021-01-21 |
| CN114097091A (zh) | 2022-02-25 |
| KR102843099B1 (ko) | 2025-08-06 |
| US12527083B2 (en) | 2026-01-13 |
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