WO2021035545A1 - 显示基板、显示面板及显示基板的制备方法 - Google Patents

显示基板、显示面板及显示基板的制备方法 Download PDF

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Publication number
WO2021035545A1
WO2021035545A1 PCT/CN2019/102884 CN2019102884W WO2021035545A1 WO 2021035545 A1 WO2021035545 A1 WO 2021035545A1 CN 2019102884 W CN2019102884 W CN 2019102884W WO 2021035545 A1 WO2021035545 A1 WO 2021035545A1
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Prior art keywords
functional layer
electrode
base substrate
layer
contact
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English (en)
French (fr)
Inventor
浦超
杨盛际
卢鹏程
黄冠达
魏俊波
刘李
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BOE Technology Group Co Ltd
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BOE Technology Group Co Ltd
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Priority to US16/967,226 priority Critical patent/US11805677B2/en
Priority to EP19933204.0A priority patent/EP4024462A4/en
Priority to PCT/CN2019/102884 priority patent/WO2021035545A1/zh
Priority to CN201980001504.6A priority patent/CN112714955B/zh
Publication of WO2021035545A1 publication Critical patent/WO2021035545A1/zh
Anticipated expiration legal-status Critical
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/131—Interconnections, e.g. wiring lines or terminals
    • H10K59/1315—Interconnections, e.g. wiring lines or terminals comprising structures specially adapted for lowering the resistance
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
    • H10K50/11—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
    • H10K50/14—Carrier transporting layers
    • H10K50/15—Hole transporting layers
    • H10K50/157—Hole transporting layers between the light-emitting layer and the cathode
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
    • H10K50/14—Carrier transporting layers
    • H10K50/16—Electron transporting layers
    • H10K50/167—Electron transporting layers between the light-emitting layer and the anode
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
    • H10K50/17—Carrier injection layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
    • H10K50/17—Carrier injection layers
    • H10K50/171—Electron injection layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/121—Active-matrix OLED [AMOLED] displays characterised by the geometry or disposition of pixel elements
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/80—Constructional details
    • H10K59/805—Electrodes
    • H10K59/8051—Anodes
    • H10K59/80515—Anodes characterised by their shape
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/80—Constructional details
    • H10K59/805—Electrodes
    • H10K59/8052—Cathodes
    • H10K59/80521—Cathodes characterised by their shape
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/131—Interconnections, e.g. wiring lines or terminals

Definitions

  • the embodiments of the present disclosure relate to a display substrate, a display panel, and a manufacturing method of the display substrate.
  • OLED Organic Light-Emitting Diode
  • OLED Organic Light-Emitting Diode
  • a silicon-based organic light-emitting diode (silicon-based OLED) display device is a new type of OLED display device using a silicon substrate as a substrate.
  • Silicon-based OLED display devices have the advantages of small size and high resolution.
  • the silicon-based OLED display device is made with a mature integrated circuit CMOS process, which realizes the active addressing of pixels, and has a variety of circuit structures such as TCON (control board or logic board), OCP (operation control panel), etc., which can realize light Quantitative design.
  • At least one embodiment of the present disclosure provides a display substrate, including: a base substrate, a first electrode, a light-emitting function layer, and a second electrode, wherein the first electrode is located on the base substrate, and the light-emitting function layer Located on the side of the first electrode away from the base substrate, the second electrode is located on the side of the light-emitting function layer away from the first electrode, the first electrode, the light-emitting function layer and the The second electrode constitutes a light-emitting element; the light-emitting functional layer includes a first functional layer and a second functional layer located on the side of the first functional layer away from the base substrate, and the edge of the second functional layer is at The orthographic projection on the base substrate is located within the orthographic projection of the edge of the first functional layer on the base substrate, and the area of the orthographic projection of the second functional layer on the base substrate is smaller than The area of the orthographic projection of the first functional layer on the base substrate; the second electrode covers at least one side surface of the light-emit
  • the surface of the first functional layer away from the base substrate includes a portion covered by the second functional layer, and the first functional layer is away from the A portion of the surface of the base substrate excluding the portion covered by the second functional layer is in contact with the second electrode.
  • the outline of the orthographic projection of the first functional layer on the base substrate and the orthographic projection of the second functional layer on the base substrate are roughly the same.
  • the center of the orthographic projection of the first functional layer on the base substrate and the orthographic projection of the second functional layer on the base substrate The centers roughly coincide.
  • the portion of the second electrode covering at least one side surface of the light-emitting function layer has a component extending laterally along the surface of the base substrate.
  • the first functional layer is in contact with the second functional layer, and the surface of the first functional layer away from the base substrate includes contact with the second functional layer.
  • the light-emitting functional layer further includes a third functional layer located on a side of the second functional layer away from the base substrate; the third functional layer
  • the orthographic projection of the edge of the second functional layer on the base substrate is within the orthographic projection of the edge of the second functional layer on the base substrate, and the orthographic projection of the third functional layer on the base substrate The area of is smaller than the area of the orthographic projection of the second functional layer on the base substrate.
  • the second functional layer is in contact with the third functional layer, and the surface of the second functional layer away from the base substrate includes contact with the third functional layer.
  • the part in contact with the functional layer and the part in contact with the second electrode; the side surface of the second functional layer, the part of the surface of the second functional layer away from the base substrate that is in contact with the second electrode And the side surfaces of the third functional layer are in contact with each other and a second step structure is formed on the at least one side surface, and the second electrode covers the second step structure and is in contact with the second step structure.
  • the portion of the second electrode covering the first stepped structure and the second stepped structure has on the at least one side surface of the light-emitting function layer The first step structure.
  • the light-emitting functional layer further includes a fourth functional layer located on a side of the third functional layer away from the base substrate; the fourth functional layer
  • the orthographic projection of the edge of the third functional layer on the base substrate is within the orthographic projection of the edge of the third functional layer on the base substrate, and the orthographic projection of the fourth functional layer on the base substrate The area of is smaller than the area of the orthographic projection of the third functional layer on the base substrate.
  • the third functional layer is in contact with the fourth functional layer, and the surface of the third functional layer away from the base substrate includes contact with the fourth functional layer.
  • the portion of the second electrode covering the second step structure and the third step structure has a surface on the at least one side surface of the light-emitting function layer.
  • the second ladder structure is
  • the light-emitting functional layer further includes a fifth functional layer located on a side of the fourth functional layer away from the base substrate; the fifth functional layer
  • the orthographic projection of the edge of the fourth functional layer on the base substrate is within the orthographic projection of the edge of the fourth functional layer on the base substrate, and the orthographic projection of the fifth functional layer on the base substrate The area of is smaller than the area of the orthographic projection of the fourth functional layer on the base substrate.
  • the fourth functional layer is in contact with the fifth functional layer, and the surface of the fourth functional layer away from the base substrate includes contact with the fifth functional layer.
  • the part in contact with the functional layer and the part in contact with the second electrode; the side surface of the fourth functional layer, the part of the surface of the fourth functional layer away from the base substrate that is in contact with the second electrode And the side surfaces of the fifth functional layer are in contact with each other and a fourth step structure is formed on the at least one side surface, and the second electrode covers the fourth step structure and is in contact with the fourth step structure.
  • the portion of the second electrode covering the third step structure and the fourth step structure has a surface on the at least one side surface of the light-emitting function layer.
  • the third ladder structure is
  • the first functional layer is a hole injection layer
  • the second functional layer is a hole transport layer
  • the third functional layer is a light-emitting layer
  • the fourth functional layer is an electron transport layer
  • the fifth functional layer is an electron injection layer.
  • the display substrate includes a display area and a peripheral area surrounding the display area, and the display substrate further includes an auxiliary electrode located in the peripheral area, wherein, The auxiliary electrode at least partially surrounds the display area; the first electrode is located in the display area, the second electrode is located in the display area and the peripheral area, and passes through the peripheral area The hole or direct contact is electrically connected to the auxiliary electrode.
  • the base substrate is a silicon substrate
  • the silicon substrate includes a pixel drive circuit
  • the pixel drive circuit is configured to be electrically connected to the first electrode .
  • the auxiliary electrode and the first electrode are provided in the same layer and insulated from each other, and the material of the auxiliary electrode is the same as the material of the first electrode.
  • the peripheral area includes a connection electrode area and a sensor area, the connection electrode area at least partially surrounds the sensor area, and the sensor area at least partially surrounds the display area.
  • Area; the auxiliary electrode is located in the connecting electrode area, the orthographic projection of the sensor area on the base substrate is located in the orthographic projection of any functional layer in the light-emitting functional layer on the base substrate Inside.
  • the peripheral area further includes a first dummy sub-area and a second dummy sub-area, and the connection electrode area at least partially surrounds the first dummy sub-area, so The first dummy sub-area at least partially surrounds the sensor area; the sensor area at least partially surrounds the second dummy sub-area, and the second dummy sub-area at least partially surrounds the display area; the light-emitting function layer is located The display area, the second dummy sub-area, the sensor area, and the first dummy sub-area.
  • the first step structure is such that the first functional layer is far away from the first functional layer.
  • the display substrate provided by at least one embodiment of the present disclosure further includes a color filter layer, wherein the color filter layer is located on a side of the second electrode away from the base substrate, and the light-emitting function layer is located on the base substrate.
  • the orthographic projection on the substrate is located within the orthographic projection of the color filter layer on the base substrate.
  • the display substrate is an organic light emitting diode display substrate or a quantum dot light emitting diode display substrate.
  • At least one embodiment of the present disclosure further provides a display panel including the display substrate according to any embodiment of the present disclosure.
  • At least one embodiment of the present disclosure further provides a method for preparing a display substrate, including: providing a base substrate; forming a first electrode on the base substrate; forming a light-emitting function layer on the first electrode; A second electrode is formed on the light-emitting functional layer; wherein the first electrode, the light-emitting functional layer, and the second electrode constitute a light-emitting element, and the light-emitting functional layer includes a first functional layer and a light-emitting functional layer located on the first functional layer.
  • the second functional layer on the side away from the base substrate, the orthographic projection of the edge of the second functional layer on the base substrate is located on the edge of the first functional layer on the base substrate
  • the area of the orthographic projection of the second functional layer on the base substrate is smaller than the area of the orthographic projection of the first functional layer on the base substrate;
  • the second electrode covers At least one side surface of the light-emitting function layer and a part surface away from the base substrate are in contact with at least one side surface of the light-emitting function layer and a part surface away from the base substrate.
  • the surface of the first functional layer away from the base substrate includes a portion covered by the second functional layer, and the first functional layer is away from the A portion of the surface of the base substrate excluding the portion covered by the second functional layer is in contact with the second electrode.
  • the portion of the second electrode covering at least one side surface of the light-emitting function layer has a component extending laterally along the surface of the base substrate.
  • the first functional layer is in contact with the second functional layer, and the surface of the first functional layer away from the base substrate includes contact with the second functional layer.
  • the preparation method provided by at least one embodiment of the present disclosure further includes forming a third functional layer on the side of the second functional layer away from the base substrate, wherein the edge of the third functional layer is on the liner.
  • the orthographic projection on the base substrate is located within the orthographic projection of the edge of the second functional layer on the base substrate, and the area of the orthographic projection of the third functional layer on the base substrate is smaller than that of the first The area of the orthographic projection of the two functional layers on the base substrate.
  • the second functional layer is in contact with the third functional layer, and the surface of the second functional layer away from the base substrate includes contact with the third functional layer.
  • the part in contact with the functional layer and the part in contact with the second electrode; the side surface of the second functional layer, the part of the surface of the second functional layer away from the base substrate that is in contact with the second electrode And the side surfaces of the third functional layer are in contact with each other and a second step structure is formed on the at least one side surface, and the second electrode covers the second step structure and is in contact with the second step structure.
  • the portion of the second electrode covering the first step structure and the second step structure has a surface on the at least one side surface of the light-emitting function layer.
  • FIG. 1A is a schematic diagram of a partial cross-sectional structure of a display substrate provided by some embodiments of the present disclosure
  • FIG. 1B is a schematic diagram of a specific example of part S1 shown in FIG. 1A;
  • FIG. 2 is a schematic diagram of a partial planar structure of a display substrate provided by some embodiments of the present disclosure
  • 3A is a schematic diagram of a partial cross-sectional structure of another display substrate provided by some embodiments of the present disclosure.
  • 3B is a schematic diagram of the planar structure of the light-emitting function layer of the display substrate shown in FIG. 3A;
  • FIG. 4 is a schematic diagram of another partial cross-sectional structure of a display substrate provided by some embodiments of the present disclosure.
  • FIG. 5 is a schematic diagram of another partial cross-sectional structure of a display substrate provided by some embodiments of the present disclosure.
  • 6A is a schematic diagram of another partial cross-sectional structure of a display substrate provided by some embodiments of the present disclosure.
  • FIG. 6B is a schematic diagram of area division of a display substrate provided by some embodiments of the present disclosure.
  • FIG. 7 is a schematic diagram of another partial cross-sectional structure of a display substrate provided by some embodiments of the present disclosure.
  • FIG. 8 is a schematic diagram of a circuit principle of a display substrate provided by some embodiments of the present disclosure.
  • FIG. 9 is a circuit diagram of a specific implementation example of a voltage control circuit and a pixel driving circuit of a display substrate provided by some embodiments of the present disclosure.
  • FIG. 10 is a flowchart of a method for manufacturing a display substrate provided by some embodiments of the present disclosure.
  • silicon-based OLED display devices have the advantages of small size and high resolution, and are widely used in near-eye display fields such as virtual reality (VR) or augmented reality (AR).
  • VR virtual reality
  • AR augmented reality
  • the edges of the film layers of the light-emitting elements in the silicon-based OLED display device are usually aligned and the total thickness of the film layers of the light-emitting elements is relatively thick, the cathode (or anode) located on the light-emitting functional layer in the light-emitting element is in the film layer.
  • At least one embodiment of the present disclosure provides a display substrate, which can reduce the drop of the electrode located on the light-emitting functional layer in the light-emitting element along the side surface of the light-emitting functional layer, that is, reduce the film layer of the electrode on the light-emitting element.
  • the drop at the edge thereby reducing or avoiding the risk of the electrode being disconnected at the edge of the film layer of the light-emitting element, significantly improving the electrical connection performance of the electrode, thereby improving the overall performance and service life of the display substrate, and further improving the inclusion of the The overall performance and service life of the display panel or display device of the display substrate.
  • At least one embodiment of the present disclosure provides a display substrate including a base substrate, a first electrode, a light-emitting function layer, and a second electrode.
  • the first electrode is located on the base substrate
  • the light-emitting function layer is located on the side of the first electrode away from the base substrate
  • the second electrode is located on the side of the light-emitting function layer away from the first electrode
  • the first electrode, the light-emitting function layer and the second electrode Constitute a light-emitting element
  • the second electrode also covers at least one side surface of the light-emitting functional layer and a part of the surface away from the base substrate
  • the light-emitting functional layer includes a first functional layer and a first functional layer located on the side of the first functional layer away from the base substrate Two functional layers; the shape of at least one side surface of the light-emitting functional layer is configured such that the portion where the second electrode covers at least one side surface has a component extending laterally along the surface of the base substrate.
  • the portion covering at least one side surface of the light-emitting function layer by the second electrode in the light-emitting element has a component extending laterally along the surface of the base substrate, for example, the second electrode
  • the portion of the electrode covering at least one side surface of the light-emitting functional layer is stepped or sloped along the side surface of the light-emitting functional layer, so that the portion of the second electrode covering at least one side surface of the light-emitting functional layer is perpendicular to the surface of the base substrate.
  • the drop in the direction of the light-emitting element is reduced, that is, the drop of the second electrode at the edge of the film layer of the light-emitting element is reduced.
  • the risk of disconnection of the second electrode at the edge of the film layer of the light-emitting element can be reduced or avoided, and the electrical connection performance of the second electrode can be significantly improved, thereby improving the overall performance and service life of the display substrate, and further improving the The overall performance and service life of the display panel or display device of the display substrate.
  • the second electrode in the light-emitting element covering at least one side surface of the light-emitting functional layer has a component that extends laterally along the surface of the base substrate
  • the second electrode covers the light-emitting functional layer.
  • the part of at least one side of the surface may be stepped, sloped or other suitable shapes, which are not limited in the embodiments of the present disclosure.
  • At least one embodiment of the present disclosure provides a display substrate including a base substrate, a first electrode, a light-emitting function layer, and a second electrode.
  • the first electrode is located on the base substrate
  • the light-emitting function layer is located on the side of the first electrode away from the base substrate
  • the second electrode is located on the side of the light-emitting function layer away from the first electrode, the first electrode, the light-emitting function layer and the second electrode Constitute a light-emitting element.
  • the light-emitting functional layer includes a first functional layer and a second functional layer located on the side of the first functional layer away from the base substrate.
  • the orthographic projection of the edge of the second functional layer on the base substrate is located on the edge of the first functional layer.
  • the second electrode covers at least one side of the light-emitting functional layer
  • the surface and a part of the surface away from the base substrate are in contact with at least one side surface of the light-emitting function layer and a part of the surface away from the base substrate.
  • the first functional layer and the second functional layer form a slope structure at the edge of the film layer of the light-emitting element Or step structure, so that the part of the second electrode covering and contacting at least one side surface of the light-emitting functional layer is sloped or stepped along the side surface of the light-emitting functional layer, so that the second electrode covers at least one side surface of the light-emitting functional layer
  • the drop of the part in the direction perpendicular to the surface of the base substrate is reduced, that is, the drop of the second electrode at the edge of the film layer of the light-emitting element is reduced.
  • the risk of disconnection of the second electrode at the edge of the film layer of the light-emitting element can be reduced or avoided, and the electrical connection performance of the second electrode can be significantly improved, thereby improving the overall performance and service life of the display substrate, and further improving the The overall performance and service life of the display panel or display device of the display substrate.
  • the display substrate 10 includes: a base substrate 110, a first electrode 120, a light-emitting function layer 130 and a second electrode 140.
  • the first electrode 120 is located on the base substrate 110
  • the light-emitting function layer 130 is located on the side of the first electrode 120 away from the base substrate 110
  • the second electrode 140 is located on the side of the light-emitting function layer 130 away from the first electrode 120.
  • the first electrode 120, the light-emitting function layer 130 and the second electrode 140 constitute a light-emitting element 150, and the second electrode 140 also covers at least one side surface of the light-emitting function layer 130 and a part of the surface away from the base substrate 110.
  • the light-emitting functional layer 130 includes a first functional layer 131 and a second functional layer 132 located on a side of the first functional layer 131 away from the base substrate 110.
  • the first functional layer 131 covers at least one side surface of the first electrode 120 and a part of the surface of the base substrate 110.
  • the orthographic projection of the edge of the second functional layer 132 on the base substrate 110 is within the orthographic projection of the edge of the first functional layer 131 on the base substrate 110, and the orthographic projection of the second functional layer 132 on the base substrate 110 The area of is smaller than the area of the orthographic projection of the first functional layer 131 on the base substrate 110.
  • edges of the first functional layer 131 and the edges of the second functional layer 132 are arranged out of alignment, so that the portion of the second electrode 140 that covers and contacts the side surfaces of the first functional layer 131 and the second functional layer 132 has A component extending laterally along the surface of the base substrate 110.
  • the surface of the first functional layer 131 away from the base substrate 110 includes a portion covered by the second functional layer 132, and the surface of the first functional layer 131 away from the base substrate 110 is removed by the second functional layer.
  • the portion other than the portion covered by 132 is in contact with the second electrode 140, so that the portion of the second electrode 140 that covers and contacts the side surfaces of the first functional layer 131 and the second functional layer 132 is in a direction perpendicular to the surface of the base substrate 110. The drop on the top is reduced.
  • the outline of the orthographic projection of the first functional layer 131 on the base substrate 110 is substantially the same as the outline of the orthographic projection of the second functional layer 132 on the base substrate 110. That is, the contour of the first functional layer 131 and the contour of the second functional layer 132 may be substantially the same, for example, a square shape or other suitable shapes.
  • the center of the orthographic projection of the first functional layer 131 on the base substrate 110 roughly coincides with the center of the orthographic projection of the second functional layer 132 on the base substrate 110, and the contours of the first functional layer 131 and the second
  • the contours of the functional layers 132 are substantially the same, the distances between the edges of the first functional layer 131 and the edges of the second functional layer 132 at different positions can be kept substantially the same.
  • the specific distance between the edge of the first functional layer 131 and the edge of the second functional layer 132 can be set according to the specific structure of the display substrate 10 or different actual requirements. The disclosed embodiment does not limit this.
  • the edge portion of the second functional layer 132 is in direct contact with the first functional layer 131, that is, no film or layer is provided between the edge portion of the second functional layer 132 and the first functional layer 131. structure.
  • the surface of the first functional layer 131 away from the base substrate 110 includes a portion in contact with the second functional layer 132 and a portion in contact with the second electrode 140.
  • the side surface of the first functional layer 131, the portion of the first functional layer 131 away from the surface of the base substrate 110 that is in contact with the second electrode 140, and the side surface of the second functional layer 132 are in contact with each other and are in contact with the light-emitting functional layer 130.
  • a first step structure 161 is formed on at least one side surface (as shown by a dashed frame in FIG. 1A ), and the second electrode 140 covers the first step structure 161 and is in contact with the first step structure 161.
  • the shape and size of the first step structure 161 can be adjusted accordingly according to the size and positional relationship of the first functional layer 131 and the second functional layer 132, which is not limited in the embodiment of the present disclosure.
  • the first step structure 161 can make the part of the second electrode 140 covering the side surfaces of the first functional layer 131 and the second functional layer 132 in a stepped shape, thereby reducing the coverage of the second electrode 140 on the first functional layer 131 and the second functional layer.
  • the portion of the side surface of the layer 132 has a drop in the direction perpendicular to the surface of the base substrate 110, that is, the drop of the second electrode 140 at the edge of the film of the light-emitting element 150 is reduced. Therefore, the first step structure 161 can reduce or avoid the disconnection phenomenon of the second electrode 140 at the film edge of the light-emitting element 150, so that the electrical connection performance of the second electrode 140 is significantly improved.
  • the first electrode 120 is an anode and the second electrode 140 is a cathode; alternatively, the first electrode 120 is a cathode and the second electrode 140 is an anode.
  • the arrangement of the first electrode 120 and the second electrode 140 are basically the same or similar, and will not be repeated.
  • the anode can be made of a transparent conductive material, for example, the transparent conductive material includes indium tin oxide (ITO), indium zinc oxide (IZO), indium gallium oxide (IGO), gallium zinc oxide (GZO), zinc oxide (ZnO) , Indium oxide (In 2 O 3 ), aluminum oxide zinc (AZO) and carbon nanotubes, etc., to have higher transmittance, higher work function, etc.
  • the cathode can be made of metals such as magnesium and silver and their alloy materials or transparent conductive materials.
  • the first functional layer 131 and the second functional layer 132 may be a hole injection layer and a light emitting layer, respectively; or, the first functional layer 131 and the second functional layer 132 may be a hole transport layer and a light-emitting layer, respectively; or, the first functional layer 131 and the second functional layer 132 may be a light-emitting layer and an electron transport layer, respectively; or, the first functional layer 131 and the second functional layer 132 may be respectively It is the light-emitting layer and the electron injection layer.
  • the embodiment of the present disclosure does not limit this.
  • the material of the light-emitting layer can be selected according to the color of the emitted light.
  • the material of the light-emitting layer includes fluorescent light-emitting materials or phosphorescent light-emitting materials.
  • a doping system is usually used, that is, doping materials are mixed into the host light-emitting material to obtain Usable luminescent materials, for example, the host luminescent material can be metal compound materials, anthracene derivatives, aromatic diamine compounds, triphenylamine compounds, aromatic triamine compounds, benzenediamine derivatives or triarylamine polymers Wait.
  • the base substrate 110 may be a wafer (silicon wafer), and the first electrode 120 may be formed on the base substrate 110 by a chemical vapor deposition method, for example.
  • This process can be prepared by a conventional process adopted by a wafer manufacturer or a light-emitting device manufacturer (for example, an OLED display device manufacturer), which is not limited in the embodiments of the present disclosure.
  • the first functional layer 131 and the second functional layer 132 may be vapor-deposited on the base substrate 110 on which the first electrode 120 is prepared using a mask.
  • the portion of the second electrode 140 subsequently vapor-deposited on the base substrate 110 covering the side surfaces of the first functional layer 131 and the second functional layer 132 may be stepped.
  • first functional layer 131 and the second functional layer 132 are vapor-deposited using a mask and the film edges of the first functional layer 131 and the second functional layer 132 are in a stepped structure, and the mask is vapor-deposited
  • the steps of the second electrode 140 and the stepped portion of the second electrode 140 covering the side surfaces of the first functional layer 131 and the second functional layer 132 are all conventional manufacturing processes in the art, and will not be repeated here.
  • the shapes of the film edges of the first electrode 120, the second electrode 140, the first functional layer 131, and the second functional layer 132 are, for example, circular arcs or slopes. Shape, or other suitable shapes according to actual process requirements.
  • the right-angle shape of the edge of the film layer shown in FIG. 1A is only a schematic illustration. The following embodiments are basically the same as this, and will not be repeated here.
  • the edge of the film can be sloped. That is, the film thicknesses of the edge portions of the second electrode 140, the second functional layer 132, and the first functional layer 131 are gradually reduced.
  • the display substrate 10 further includes an auxiliary electrode 170, and the auxiliary electrode 170 is directly disposed on the base substrate 110.
  • FIG. 2 is a schematic diagram of a partial planar structure of a display substrate provided by some embodiments of the present disclosure, for example, is a bottom view of the display substrate 10 shown in FIG. 1A.
  • the display substrate 10 includes a display area 181 and a peripheral area 182 surrounding the display area 181.
  • the auxiliary electrode 170 is located in the peripheral area 182 and at least partially surrounds the display area 181.
  • the auxiliary electrode 170 may have a ring shape.
  • the first electrode 120 and at least part of the light-emitting function layer 130 are located in the display area 181, the second electrode 140 is located in the display area 181 and the peripheral area 182, and the second electrode 140 is in direct contact with the auxiliary electrode 170 in the peripheral area 182 to achieve electrical connection.
  • the second electrode 140 may also be electrically connected to the auxiliary electrode 170 through a via hole.
  • the auxiliary electrode 170 may be electrically connected to the power signal line used to provide electrical signals such as the second electrode driving current or voltage in the base substrate 110, so that the second electrode 140 may be electrically connected to the power signal line through the auxiliary electrode 170. Connect to receive the electrical signal. Since the auxiliary electrode 170 is disposed in the peripheral area 182, the size of the auxiliary electrode 170 can be set relatively large, and the contact area between the second electrode 140 and the auxiliary electrode 170 can be increased or the second electrode 140 and the auxiliary electrode can be increased. The size of the via holes arranged between 170 is increased or the number of via holes is increased, thereby further improving the electrical connection performance of the second electrode 140.
  • the auxiliary electrode 170 and the first electrode 120 may be provided in the same layer and insulated from each other, and the material of the auxiliary electrode 170 is the same as that of the first electrode 120, so that the auxiliary electrode 170 and the first electrode 120 can be used
  • the preparation is carried out in the same process, so that the preparation process of the display substrate 10 is simplified, and the preparation cost of the display substrate 10 is reduced.
  • the auxiliary electrode 170 can also be made of other suitable conductive materials that are different from the material of the first electrode 120.
  • the embodiments of the present disclosure compare the materials and materials of the auxiliary electrode 170.
  • the preparation method is not limited.
  • the first functional layer 131 includes a portion located in the same layer as the auxiliary electrode 170 and the first electrode 120, and the first functional layer 131 and the auxiliary electrode 170 are located in the same layer. There is a gap, and the second electrode 140 is filled in the gap.
  • the display substrate 10 may further include other structures or components disposed between the first functional layer 131 and the auxiliary electrode 170, which is not limited in the embodiment of the present disclosure.
  • the display substrate 20 includes: a base substrate 210, a first electrode 220, a light-emitting function layer 230, and a second electrode 240.
  • the first electrode 220 is located on the base substrate 210
  • the light-emitting function layer 230 is located on the side of the first electrode 220 away from the base substrate 210
  • the second electrode 240 is located on the side of the light-emitting function layer 230 away from the first electrode 220.
  • the first electrode 220, the light-emitting function layer 230 and the second electrode 240 constitute a light-emitting element 250, and the second electrode 240 also covers at least one side surface of the light-emitting function layer 230 and a part of the surface away from the base substrate 210.
  • the light-emitting functional layer 230 includes a first functional layer 231, a second functional layer 232 located on a side of the first functional layer 231 away from the base substrate 210, and a second functional layer 232 located away from the substrate 210.
  • the third functional layer 233 on one side of the substrate 210.
  • the first functional layer 231 is in direct contact with the second functional layer 232, and the second functional layer 232 is in direct contact with the third functional layer 233.
  • the first functional layer 231 covers at least one side surface of the first electrode 220 and a part of the surface of the base substrate 210.
  • the orthographic projection of the edge of the second functional layer 232 on the base substrate 210 is within the orthographic projection of the edge of the first functional layer 231 on the base substrate 210, and the orthographic projection of the second functional layer 232 on the base substrate 210 The area of is smaller than the area of the orthographic projection of the first functional layer 231 on the base substrate 210.
  • the orthographic projection of the edge of the third functional layer 233 on the base substrate 210 is within the orthographic projection of the edge of the second functional layer 232 on the base substrate 210, and the orthographic projection of the third functional layer 233 on the base substrate 210 The area of is smaller than the area of the orthographic projection of the second functional layer 232 on the base substrate 210.
  • the edges of the first functional layer 231, the edges of the second functional layer 232, and the edges of the third functional layer 233 are arranged out of alignment, so that the second electrode 240 covers the first functional layer 231 and the second functional layer 232.
  • Both of the side surfaces of the third functional layer 233 and the third functional layer 233 have components extending laterally along the surface of the base substrate 210.
  • the surface of the first functional layer 231 away from the base substrate 210 includes a portion covered by the second functional layer 232, and the surface of the first functional layer 231 away from the base substrate 210 is divided by the second functional layer.
  • the part other than the part covered by 232 is in contact with the second electrode 240;
  • the surface of the second functional layer 232 away from the base substrate 210 includes the part covered by the third functional layer 233, and the second functional layer 232 is away from the surface of the base substrate 210.
  • the portion other than the portion covered by the third functional layer 233 is in contact with the second electrode 240.
  • the part of the second electrode 240 covering and contacting the side surfaces of the first functional layer 231, the second functional layer 232, and the third functional layer 233 in the direction perpendicular to the surface of the base substrate 210 can be reduced in height. .
  • 3B is a schematic diagram of the planar structure of the light-emitting function layer of the display substrate shown in FIG. 3A.
  • the outline of the orthographic projection of the first functional layer 231 on the base substrate 210, the outline of the orthographic projection of the second functional layer 232 on the base substrate 210, and the third functional layer 233 are all substantially the same. That is, the outline of the first functional layer 231, the outline of the second functional layer 232, and the outline of the third functional layer 233 may all be substantially the same, for example, a square shape or other suitable shapes.
  • the center of the orthographic projection of the first functional layer 231 on the base substrate 210, the center of the orthographic projection of the second functional layer 232 on the base substrate 210, and the orthographic projection of the third functional layer 233 on the base substrate 210 The centers of the first functional layer 231, the second functional layer 232, and the third functional layer 233 are all substantially the same, so that the edges of the first functional layer 231 at different positions.
  • the distance d2 from the edge of the second functional layer 232 may be approximately the same, and the distance d1 between the edge of the second functional layer 232 and the edge of the third functional layer 233 at different positions may be approximately the same.
  • the distance d2 between the edge of the first functional layer 231 and the edge of the second functional layer 232 and the distance between the edge of the second functional layer 232 and the edge of the third functional layer 233 can be the same, so that the portion of the second electrode 240 covering the side surface of the light-emitting function layer 230 can be further optimized, and the manufacturing process and process of the display substrate 20 can also be improved.
  • the distance d2 between the edge of the first functional layer 231 and the edge of the second functional layer 232 and the distance between the edge of the second functional layer 232 and the third functional layer 233 may also be different, which is not limited in the embodiment of the present disclosure.
  • the specific distance between the edge of the first functional layer 231, the edge of the second functional layer 232, and the edge of the third functional layer 233 may be based on the specific structure of the display substrate 20 or Different actual requirements are set, which is not limited in the embodiments of the present disclosure.
  • the edge portion of the second functional layer 232 is in direct contact with the first functional layer 231, and the edge portion of the third functional layer 233 is in direct contact with the second functional layer 232. That is, no film layer or structure is provided between the edge portion of the second functional layer 232 and the first functional layer 231, and no film layer or structure is provided between the edge portion of the third functional layer 233 and the second functional layer 232. structure.
  • the surface of the first functional layer 231 away from the base substrate 210 includes a portion in contact with the second functional layer 232 and a portion in contact with the second electrode 240.
  • the side surface of the first functional layer 231, the portion of the first functional layer 231 away from the surface of the base substrate 210 that is in contact with the second electrode 240, and the side surface of the second functional layer 232 are in contact with each other and are in contact with the light-emitting functional layer 230.
  • a first step structure 261 is formed on at least one side surface, and the second electrode 240 covers the first step structure 261 and is in contact with the first step structure 261.
  • the surface of the second functional layer 232 away from the base substrate 210 includes a portion in contact with the third functional layer 233 and a portion in contact with the second electrode 240.
  • the side surface of the second functional layer 232, the portion of the second functional layer 232 away from the surface of the base substrate 210 that is in contact with the second electrode 240, and the side surface of the third functional layer 233 are in contact with each other and are in contact with the light emitting functional layer 230.
  • a second step structure 262 is formed on at least one side surface, and the second electrode 240 covers the second step structure 262 and is in contact with the second step structure 262.
  • the shape and size of the first step structure 261 and the second step structure 262 can be adjusted accordingly according to the size and positional relationship of the first functional layer 231, the second functional layer 232, and the third functional layer 233.
  • the present disclosure The embodiment does not limit this.
  • the portion of the second electrode 240 that covers and contacts the first stepped structure 261 and the second stepped structure 262 has a first stepped structure on at least one side surface of the light-emitting function layer 230, so that the second electrode 240
  • the portions covering and contacting the side surfaces of the first functional layer 231, the second functional layer 232, and the third functional layer 233 are in a continuous step shape.
  • the first functional layer 231, the second functional layer 232, and the third functional layer 233 may be hole injection layers, hole transport and light-emitting layers, respectively; or, The first functional layer 231, the second functional layer 232, and the third functional layer 233 may be a light-emitting layer, an electron transport layer, and an electron injection layer, respectively; or, the second functional layer 232 is a light-emitting layer, and the first functional layer 231 is a hole One of the injection layer and the hole transport layer, and the third functional layer 233 is one of the electron transport layer and the electron injection layer.
  • the embodiment of the present disclosure does not limit this.
  • the materials and preparation processes of the first electrode 220, the second electrode 240, the first functional layer 231, the second functional layer 232, and the third functional layer 233 can refer to the description of the corresponding part of the display substrate 10 in the foregoing embodiment. This will not be repeated here.
  • the display substrate 20 further includes an auxiliary electrode 270.
  • the structure and function of the auxiliary electrode 270 can refer to the auxiliary electrode 170 in the display substrate 10 shown in FIG. 1A, and will not be repeated here.
  • the display substrate 30 includes: a base substrate 310, a first electrode 320, a light-emitting function layer 330, and a second electrode 340.
  • the first electrode 320 is located on the base substrate 310
  • the light-emitting function layer 330 is located on the side of the first electrode 320 away from the base substrate 310
  • the second electrode 340 is located on the side of the light-emitting function layer 330 away from the first electrode 320.
  • the first electrode 320, the light-emitting function layer 330 and the second electrode 340 constitute a light-emitting element 350, and the second electrode 340 also covers at least one side surface of the light-emitting function layer 330 and a part of the surface away from the base substrate 310.
  • the light-emitting functional layer 330 includes a first functional layer 331, a second functional layer 332 located on a side of the first functional layer 331 away from the base substrate 310, and a second functional layer 332 located away from the base substrate.
  • the third functional layer 333 on the side of the third functional layer 333, the fourth functional layer 334 on the side of the third functional layer 333 away from the base substrate 310, and the fifth functional layer 334 on the side of the fourth functional layer 334 away from the base substrate 310 Function layer 335.
  • the first functional layer 331 is in direct contact with the second functional layer 332, the second functional layer 332 is in direct contact with the third functional layer 333, the third functional layer 333 is in direct contact with the fourth functional layer 334, and the fourth functional layer 334 is in direct contact with the fifth functional layer.
  • the functional layer 335 is in direct contact.
  • the first functional layer 331 covers at least one side surface of the first electrode 320 and a part of the surface of the base substrate 310.
  • the orthographic projection of the edge of the second functional layer 332 on the base substrate 310 is within the orthographic projection of the edge of the first functional layer 331 on the base substrate 310, and the orthographic projection of the second functional layer 332 on the base substrate 310
  • the area of is smaller than the area of the orthographic projection of the first functional layer 331 on the base substrate 310.
  • the orthographic projection of the edge of the third functional layer 333 on the base substrate 310 is within the orthographic projection of the edge of the second functional layer 332 on the base substrate 310, and the orthographic projection of the third functional layer 333 on the base substrate 310 The area of is smaller than the area of the orthographic projection of the second functional layer 332 on the base substrate 310.
  • the orthographic projection of the edge of the fourth functional layer 334 on the base substrate 310 is within the orthographic projection of the edge of the third functional layer 333 on the base substrate 310, and the orthographic projection of the fourth functional layer 334 on the base substrate 310 The area of is smaller than the area of the orthographic projection of the third functional layer 333 on the base substrate 310.
  • the orthographic projection of the edge of the fifth functional layer 335 on the base substrate 310 is within the orthographic projection of the edge of the fourth functional layer 334 on the base substrate 310, and the orthographic projection of the fifth functional layer 335 on the base substrate 310 The area of is smaller than the area of the orthographic projection of the fourth functional layer 334 on the base substrate 310.
  • edges of the first functional layer 331, the edges of the second functional layer 332, the edges of the third functional layer 333, the edges of the fourth functional layer 334, and the edges of the fifth functional layer 335 are arranged out of alignment, so that The portion of the second electrode 340 covering the side surfaces of the first functional layer 331, the second functional layer 332, the third functional layer 333, the fourth functional layer 334, and the fifth functional layer 335 has a lateral extension along the surface of the base substrate 310. Weight.
  • the part of the surface of the first functional layer 331 away from the base substrate 310 except for the part covered by the second functional layer 332 is in contact with the second electrode 340, and the second functional layer 332 is away from the base substrate.
  • the part of the surface of 310 except the part covered by the third functional layer 333 is in contact with the second electrode 340, and the part of the third functional layer 333 away from the surface of the base substrate 310 except the part covered by the fourth functional layer 334
  • a part of the surface of the fourth functional layer 334 away from the base substrate 310 except for the part covered by the fifth functional layer 335 is in contact with the second electrode 340.
  • the part of the side surface of the second electrode 340 covering and contacting the first functional layer 331, the second functional layer 332, the third functional layer 333, the fourth functional layer 334, and the fifth functional layer 335 can be perpendicular to the liner.
  • the drop in the direction of the surface of the base substrate 310 is reduced.
  • the edge of the first functional layer 331, the edge of the second functional layer 332, the edge of the third functional layer 333, the edge of the fourth functional layer 334, and the fifth functional layer 335 can be set according to the specific structure of the display substrate 30 or different actual requirements, which is not limited in the embodiment of the present disclosure.
  • the distance setting between the edge of the first functional layer 331, the edge of the second functional layer 332, the edge of the third functional layer 333, the edge of the fourth functional layer 334 and the edge of the fifth functional layer 335 can refer to FIG. 3A
  • the structure of the display substrate 20 shown in FIG. 3B is not repeated here.
  • the edge portion of the second functional layer 332 directly contacts the first functional layer 331, the edge portion of the third functional layer 333 directly contacts the second functional layer 332, and the edge portion of the fourth functional layer 334 It is in direct contact with the third functional layer 333, and the edge portion of the fifth functional layer 335 is in direct contact with the fourth functional layer 334. That is, no film layer or structure is provided between the edge portion of the second functional layer 332 and the first functional layer 331, and no film layer or structure is provided between the edge portion of the third functional layer 333 and the second functional layer 332. Structure, no film layer or structure is provided between the edge portion of the fourth functional layer 334 and the third functional layer 333, and no film layer or structure is provided between the edge portion of the fifth functional layer 335 and the fourth functional layer 334 structure.
  • the surface of the first functional layer 331 away from the base substrate 310 includes a portion in contact with the second functional layer 332 and a portion in contact with the second electrode 340.
  • the side surface of the first functional layer 331, the portion of the first functional layer 331 away from the surface of the base substrate 310 that is in contact with the second electrode 340, and the side surface of the second functional layer 332 are in contact with each other and are in contact with the light-emitting functional layer 330.
  • a first step structure 361 is formed on at least one side surface, and the second electrode 340 covers the first step structure 361 and is in contact with the first step structure 361.
  • the surface of the second functional layer 332 away from the base substrate 310 includes a portion in contact with the third functional layer 333 and a portion in contact with the second electrode 340.
  • the side surface of the second functional layer 332, the portion of the second functional layer 332 away from the surface of the base substrate 310 that is in contact with the second electrode 340, and the side surface of the third functional layer 333 are in contact with each other and are in contact with the light-emitting functional layer 330.
  • a second step structure 362 is formed on at least one side surface, and the second electrode 340 covers the second step structure 362 and is in contact with the second step structure 362.
  • the surface of the third functional layer 333 away from the base substrate 310 includes a portion in contact with the fourth functional layer 334 and a portion in contact with the second electrode 340.
  • the side surface of the third functional layer 333, the portion of the third functional layer 333 away from the surface of the base substrate 310 that is in contact with the second electrode 340, and the side surface of the fourth functional layer 334 are in contact with each other and are in contact with the light emitting functional layer 330.
  • a third step structure 363 is formed on at least one side surface, and the second electrode 340 covers the third step structure 363 and is in contact with the third step structure 363.
  • the surface of the fourth functional layer 334 away from the base substrate 310 includes a portion in contact with the fifth functional layer 335 and a portion in contact with the second electrode 340.
  • the side surface of the fourth functional layer 334, the portion of the fourth functional layer 334 away from the surface of the base substrate 310 that is in contact with the second electrode 340, and the side surface of the fifth functional layer 335 are in contact with each other and are in contact with the light-emitting functional layer 330.
  • a fourth step structure 364 is formed on at least one side surface, and the second electrode 340 covers the fourth step structure 364 and is in contact with the fourth step structure 364.
  • the shape and size of the first step structure 361, the second step structure 362, the third step structure 363, and the fourth step structure 364 may be based on the first functional layer 331, the second functional layer 332, the third functional layer 333, The size and position relationship of the fourth functional layer 334 and the fifth functional layer 335 are adjusted accordingly, which is not limited in the embodiment of the present disclosure.
  • the portion of the second electrode 340 that covers and contacts the first step structure 361 and the second step structure 362 has a first step structure on at least one surface of the light-emitting function layer 330.
  • the portion of the second electrode 340 that covers and contacts the second step structure 362 and the third step structure 363 has a second step structure on at least one side surface of the light-emitting function layer 330.
  • the portion of the second electrode 340 that covers and contacts the third step structure 363 and the fourth step structure 364 has a third step structure on at least one side surface of the light-emitting function layer 330.
  • the portion of the second electrode 340 covering the side surfaces of the first functional layer 331, the second functional layer 332, the third functional layer 333, the fourth functional layer 334, and the fifth functional layer 335 is in a continuous step shape, and thus can be The portion of the side surface of the second electrode 340 covering the first functional layer 331, the second functional layer 332, the third functional layer 333, the fourth functional layer 334, and the fifth functional layer 335 is reduced to be perpendicular to the surface of the base substrate 310.
  • the drop of the second electrode 340 at the edge of the film layer of the light-emitting element 350 is reduced, so as to reduce or avoid the disconnection phenomenon of the second electrode 340 at the edge of the film layer of the light-emitting element 350, so that the second The electrical connectivity of the electrode 340 is significantly improved.
  • the first functional layer 331 is a hole injection layer
  • the second functional layer 332 is a hole transport layer
  • the third functional layer 333 is a light-emitting layer
  • the layer 334 is an electron transport layer
  • the fifth functional layer 335 is an electron injection layer.
  • the materials and preparation processes of the first electrode 320, the second electrode 340, the first functional layer 331, the second functional layer 332, the third functional layer 333, the fourth functional layer 334, and the fifth functional layer 335 can refer to the above-mentioned implementation.
  • the example shows the description of the corresponding part of the substrate 10, which will not be repeated here.
  • the display substrate 30 further includes an auxiliary electrode 370.
  • the structure and function of the auxiliary electrode 370 can refer to the auxiliary electrode 170 in the display substrate 10 shown in FIG. 1A or the auxiliary electrode 270 in the display substrate 20 shown in FIG. 3A, which will not be repeated here.
  • the light-emitting functional layer of the display substrate may further include four, six or more functional layers, which is not limited in the embodiments of the present disclosure.
  • the structure, arrangement and function of the functional layer reference may be made to the corresponding descriptions of the display substrate 10, the display substrate 20, and the display substrate 30 in the above-mentioned embodiment, which will not be repeated here.
  • the edges of all the functional layers in the light-emitting function layer are arranged out of alignment, so that the edges of adjacent functional layers are evenly arranged.
  • a stepped structure may be formed, so that the portion of the second electrode covering the side surface of the light-emitting function layer in the direction perpendicular to the surface of the base substrate may be reduced as much as possible.
  • a step structure may also be formed by three or more functional layers, that is, a step structure may also include adjacent functional layers with aligned edges.
  • the drop of the step structure in the direction perpendicular to the surface of the base substrate needs to be no greater than the height of any functional layer in the display substrate in the direction perpendicular to the surface of the base substrate.
  • the step structure is perpendicular to the surface of the base substrate.
  • the range of the drop in the direction of the surface of the base substrate may be not higher than 90 nanometers, for example, it may be further 10-80 nanometers.
  • the portion of the second electrode covering the side surface of the light-emitting function layer remains in the direction perpendicular to the surface of the base substrate.
  • the step structure in the direction perpendicular to the surface of the base substrate is lower than the above range This may increase the difficulty of preparing the display substrate, which may affect the yield of the display substrate.
  • the auxiliary electrode may be in contact with the side surface of the first functional layer, thereby reducing the size of the display substrate.
  • the size of the peripheral area is conducive to the narrow frame design of the display panel or display device including the display substrate.
  • FIG. 5 is a schematic diagram of another partial cross-sectional structure of a display substrate provided by some embodiments of the present disclosure, for example, a schematic diagram of a structure at the edge of a film layer of a light-emitting element of the display substrate.
  • the other structures of the display substrate 40 are basically the same as those in the display substrate 30 shown in FIG. , I won’t repeat it here.
  • the auxiliary electrode 470 is in contact with the side surface of the first functional layer 431, and the first step structure 461 may be a part of the first functional layer 431 away from the surface of the base substrate 410 that is in contact with the second electrode 440. , And the side surface of the second functional layer 432. Furthermore, in the case of reducing the drop of the second electrode 440 at the edge of the film layer of the light emitting element 450, the size of the peripheral area of the display substrate 40 can also be reduced, thereby facilitating the display panel or the display panel including the display substrate 40. The device realizes a narrow frame design.
  • the display substrate may be an organic light emitting diode display substrate or a quantum dot light emitting diode display substrate.
  • the display substrate 10, the display substrate 20, the display substrate 30, and the display substrate 40 in the above embodiments may all be organic light emitting diode display substrates or quantum dot light emitting diode display substrates.
  • the display substrate 10, the display substrate 20, the display substrate 30, and the display substrate 40 may also be other types of substrates with display functions, which are not limited in the embodiments of the present disclosure.
  • the base substrate of the display substrate is a silicon substrate, and the silicon substrate includes a pixel driving circuit.
  • the pixel driving circuit is configured to be electrically connected to the first electrode and provide a first electrode driving current to the first electrode.
  • the peripheral area of the display substrate includes a connecting electrode area and a sensor area, the connecting electrode area at least partially surrounds the sensor area, and the sensor area at least partially surrounds the display area.
  • the auxiliary electrode is located in the connecting electrode area, and the orthographic projection of the sensor area on the base substrate is within the orthographic projection of any functional layer in the light-emitting functional layer on the base substrate.
  • the peripheral area further includes a first dummy sub-area and a second dummy sub-area, the connection electrode area at least partially surrounds the first dummy sub-area, and the first dummy sub-area at least partially surrounds the sensor area;
  • the sensor area at least partially surrounds the second dummy sub-area, and the second dummy sub-area at least partially surrounds the display area.
  • the light-emitting function layer is located in the display area, the second dummy sub-area, the sensor area, and the first dummy sub-area.
  • FIG. 6A is a schematic diagram of another partial cross-sectional structure of a display substrate provided by some embodiments of the present disclosure
  • FIG. 6B is a schematic diagram of a region division of a display substrate provided by some embodiments of the present disclosure.
  • the area division of the display substrate 60 and the structure in the area will be described below in conjunction with the display substrate 60 shown in FIGS. 6A and 6B.
  • the structure at the edge of the film layer of the light-emitting element of the display substrate 60 in FIG. 6A is, for example, as shown in FIG. 6A
  • the structure of the second electrode 640 and the light-emitting function layer 630 may be basically the same as the display substrate 10 (or the display substrate 20, the display substrate 30) in the above-mentioned embodiment.
  • the display substrate 60 shown in FIG. 6A may also be different from the display substrates in the above-mentioned embodiments, as long as the corresponding functions can be realized.
  • the detailed structure of the light-emitting function layer 630 of the display substrate 60 is not shown in FIG. 6A.
  • the specific structure of the light-emitting function layer 630 of the display substrate 60 can refer to the light-emitting function layer 130 of the display substrate 10 shown in FIG. 1A (or the light-emitting function layer 230 of the display substrate 20 shown in FIG. 3A, and the display substrate 30 shown in FIG. 4).
  • the specific structure of the light-emitting functional layer 330) will not be repeated here.
  • the display substrate 60 includes a display area 681 and a peripheral area 682, and the peripheral area 682 includes three areas: a connection electrode area 683, a first dummy area 684, and a second dummy area 685.
  • the first dummy area 684 is located between the connection electrode area 683 and the display area 681
  • the second dummy area 685 is located on the side of the connection electrode area 683 away from the display area 681, that is, the second dummy area 685 is located at the end of the connection electrode area 683.
  • a side away from the first dummy area 684 is located between the connection electrode area 683 and the display area 681
  • the second dummy area 685 is located on the side of the connection electrode area 683 away from the display area 681, that is, the second dummy area 685 is located at the end of the connection electrode area 683.
  • the display substrate 60 includes: a first electrode pattern 103 located in a display area 681 of the display substrate 60, and includes a plurality of first electrodes 1030 (for example, anodes) spaced apart from each other; and a connection electrode pattern 103a , Located in the connecting electrode area 683 of the display substrate 60 and including a plurality of connecting electrodes 103a0 (ie auxiliary electrodes); and a first dummy electrode pattern de1, located in the first dummy area 684 of the display substrate 60, and including a plurality of first dummy electrodes Electrode de10.
  • connection electrode area 683 surrounds the display area 681
  • first dummy area 684 is located between the connection electrode area 683 and the display area 681.
  • connection electrode pattern 103 a surrounds the first electrode pattern 103
  • the first dummy electrode pattern de1 surrounds the first electrode pattern 103.
  • the first dummy electrode pattern de1 is located between the connection electrode pattern 103a and the first electrode pattern 103.
  • the display substrate 60 further includes a second electrode 640 (for example, a cathode), and the second electrode 640 is connected to the connection electrode 103a0.
  • the peripheral area 682 of the display substrate 60 surrounds the display area 681, and the peripheral area 682 includes the connection electrode area 683 and the first dummy area 684.
  • the second electrode 640 is located in the display area 681 and the peripheral area 682, and the second electrode 640 and the first electrode pattern 103 are spaced apart from each other.
  • connection electrode area 683 of the display substrate 60 the orthographic projection (not shown) of the color filter layer on the base substrate 101 completely covers the projection of the multiple connection electrodes 103a0 on the base substrate 101.
  • the orthographic projection of the first electrode pattern 103 and the second electrode 640 on the base substrate 101 is within the orthographic projection of the color filter layer (not shown) on the base substrate 101.
  • the orthographic projection of the light-emitting function layer 630 on the base substrate 101 is within the orthographic projection of the color filter layer (not shown) on the base substrate 101.
  • the pattern density of the first electrode pattern 103, the pattern density of the connection electrode pattern 103a, and the pattern density of the first dummy electrode pattern de1 are the same, and the shape of the first electrode 1030 of the first electrode pattern 103 and the connection of the connection electrode pattern 103a
  • the shape of the electrode 103a0 is the same as the shape of the first dummy electrode de10 of the first dummy electrode pattern de1, which can facilitate the consumption rate of the etching solution or developer in each area during etching or development to be roughly equivalent to ensure the uniformity of the process .
  • the peripheral area 681 further includes a sensor area R1, the connecting electrode area 683 at least partially surrounds the sensor area R1, and the sensor area R1 at least partially surrounds the display area 681.
  • the orthographic projection of the sensor area R1 on the base substrate 101 is within the orthographic projection of any functional layer in the light-emitting functional layer 630 on the base substrate 101.
  • the display substrate 60 further includes a sensor electrode pattern 103b.
  • the sensor electrode pattern 103b is located in the sensor region R1 of the display substrate 60 and includes a plurality of sensor electrodes 103b0.
  • the pattern density of the sensor electrode pattern 103b is the same as the pattern density of the first electrode pattern 103
  • the pattern shape of the sensor electrode 103b0 is the same as the pattern shape of the first electrode pattern 103.
  • the first dummy area 684 of the peripheral area 681 further includes a first dummy sub-area 1211 and a second dummy sub-area 1212.
  • the connecting electrode region 683 at least partially surrounds the first dummy sub-region 1211, the first dummy sub-region 1211 at least partially surrounds the sensor region R1; the sensor region R1 at least partially surrounds the second dummy sub-region 1212, and the second dummy sub-region 1212 at least partially surrounds the display Area 681.
  • the light-emitting function layer 630 is located in the display area 681, the second dummy sub-region 1212, the sensor region R1, and the first dummy sub-region 1211.
  • the pixel structure of the sensor area R1 is the same as the pixel structure of the display area 681.
  • the sensor electrode 103b0 is electrically connected to the pixel driving circuit through the tungsten via V3 and the via V31.
  • the pixel structure of the sensor region R1 is different from the pixel structures of the first dummy sub-region 1211, the second dummy sub-region 1212, and the second dummy region 685.
  • the first dummy electrode pattern de1 and the second dummy sub-region 1211 are The first dummy electrode de10 of the area 1212 and the second dummy electrode pattern de2 of the second dummy area 685 are not connected to other circuits through via holes.
  • the pixel structure of the sensor area R1 is used to sense the voltage of the first electrode 1030 of the display area 681, and is used to realize circuit compensation.
  • a compensation transistor can be connected to a temperature sensor to perform a correction on the first electrode of the display area 681. The voltage of 1030 is sensed.
  • the second dummy sub-region 1212 in the first dummy region 684 is used to isolate the sensor region R1 and the display region 681.
  • the first dummy sub-region 1211 in the first dummy region 684 is used for transition, so that the second electrode 640 and the connecting electrode 103a0 in the connecting electrode region 683 are better overlapped.
  • the display substrate 60 further includes a second dummy electrode pattern de2, which is located in the second dummy area 685 of the display substrate 60, and includes a plurality of second dummy electrodes de20; the second dummy area 685 is located in the connection electrode area The side of 683 far away from the display area 681.
  • the pattern density of the second dummy electrode pattern de2 and the pattern density of the first electrode pattern 103 are the same, and the second dummy electrode pattern de2 and the first electrode pattern 103 are spaced apart by the pixel defining layer.
  • the virtual pixels in the first dummy sub-area 1211 and the second dummy area 685 of the first dummy area 684 are both in two rows.
  • the side in the row direction has two rows
  • the side in the column direction has two columns.
  • the second dummy sub-region 1212 is located between the sensor region R1 and the display region 681; the part of the first dummy region 684 between the sensor region R1 and the connection electrode region 683 is the first dummy sub-region 1211;
  • a first filling layer 104a is formed in the first dummy sub-region 1211.
  • the first filling layer 104a includes a plurality of first dummy electrodes de10 and an insulating wrap layer 104c.
  • the first electrode pattern 103 includes an edge adjacent to the connecting electrode 103a0.
  • An electrode 103e and an insulating coating layer 104c are respectively in contact with the connecting electrode 103a0 and the edge first electrode 103e.
  • the insulating coating layer 104c and the pixel defining layer are made of the same material.
  • the second electrode 640 is in contact with the insulating coating 104c.
  • a first thin-film encapsulation layer 107 is further provided on the side of the second electrode 640 away from the base substrate 101.
  • the first thin-film encapsulation layer 107 can prevent water and oxygen from entering the light-emitting function layer 630. The role of.
  • the edge first electrode 103e and the plurality of first dummy electrodes de10 are insulated from each other.
  • the display substrate 60 further includes a pixel defining layer 104.
  • the pixel defining layer 104 includes a plurality of pixel defining portions 1040, and each of the plurality of pixel defining portions 1040 is located between adjacent first electrodes 1030. .
  • the insulating wrapping layer 104c and the pixel defining layer 104 are located in the same layer, and can be formed by the same film layer using the same patterning process to save manufacturing process.
  • the first electrode pattern 103 and the connecting electrode pattern 103a are located on the same layer, and can be formed by the same film layer using the same patterning process to save manufacturing process.
  • the display substrate 60 further includes a second filling layer 104b, the second filling layer 104b includes at least one second filling portion 104b0, and the second filling portion 104b0 is located between adjacent connecting electrodes 103a0.
  • the second filling layer 104b is an insulating layer.
  • the second filling portions 104b0 are in contact with adjacent connection electrodes 103a0, respectively.
  • the second filling layer 104b and the first filling layer 104a are located in the same layer, and can be formed by the same film layer using the same patterning process to save manufacturing process.
  • the display substrate 60 further includes a third filling layer 1043, and the third filling layer 1043 includes a plurality of third filling portions 10430.
  • the third filling portions 10430 are located at adjacent sensor electrodes 103b0 and adjacent sensor electrodes. 103b0 and at least one of the first dummy electrodes.
  • FIG. 6A illustrates an example where the third filling portion 10430 is located between adjacent sensor electrodes 103b0.
  • the third filling layer 1043 and the pixel definition layer 104 are located in the same layer, and can be formed by the same film layer using the same patterning process to save manufacturing process.
  • the display substrate 60 further includes a light-emitting function layer 630, the light-emitting function layer 630 is located between the first electrode pattern 103 and the second electrode 640, and the light-emitting function layer 630 is in contact with the first filling layer 104a.
  • the light-emitting function layer 630 is in contact with part of the first filling layer 104a.
  • a color filter layer (not shown) covers the light-emitting function layer 630.
  • the light-emitting function layer 630 is in contact with the sensor electrode pattern 103b.
  • the light-emitting function layer 630 is in contact with the first dummy electrode located in the second dummy sub-region 1212.
  • an insulating layer IS is further provided on the base substrate 101, and a conductive pattern 109 is provided on the insulating layer IS.
  • the conductive pattern 109 includes a first conductive portion 1091, a second conductive portion 1092, and a third conductive portion 1091. ⁇ 1093.
  • the insulating layer IS includes a via hole V11, a via hole V21, and a via hole V31.
  • the via hole V11, the via hole V21, and the via hole V31 are respectively filled with conductive materials to form a connection member.
  • the first electrode 1030 is connected to the connector in the via hole V21 through the first conductive portion 1091.
  • the connection electrode 103a0 is connected to the connection member in the via hole V11 through the second conductive portion 1092.
  • the sensor electrode 103b0 is connected to the connector in the via hole V31 through the third conductive portion 1093.
  • the portion of the first insulating layer 102 that overlaps the plurality of first dummy electrodes de10 in the direction perpendicular to the base substrate 101 is not provided with via holes.
  • the portion of the first insulating layer 102 that overlaps the plurality of second dummy electrodes de20 in the direction perpendicular to the base substrate 101 is not provided with via holes.
  • a portion of the first insulating layer 102 that overlaps the plurality of connection electrodes 103a0 in a direction perpendicular to the base substrate 101 is provided with a via hole V1.
  • a portion of the first insulating layer 102 that overlaps the plurality of first electrodes 1030 in a direction perpendicular to the base substrate 101 is provided with a via hole V2.
  • a portion of the first insulating layer 102 that overlaps the plurality of sensor electrodes 103b0 in a direction perpendicular to the base substrate 101 is provided with a via V3.
  • FIG. 7 is a schematic diagram of a partial cross-sectional structure of another display substrate provided by some embodiments of the present disclosure.
  • it may correspond to the display substrate 10 shown in FIG. 1A (or the display substrate 20 shown in FIG. 3A and the display substrate 20 shown in FIG. 4).
  • the display substrate 50 shown in FIG. 7 may be completely or substantially the same as the display substrate 10 (or the display substrate 20, the display substrate 30, the display substrate 40, the display substrate 60) in the foregoing embodiment, for example, The description is concise and the detailed structure of the display area of the display substrate 10 is not shown in FIG. 1A.
  • the display substrate 50 shown in FIG. 7 may also be different from the display substrates in the above-mentioned embodiments, as long as the corresponding functions can be realized.
  • the display substrate 10 shown in FIG. 1A (and the display substrate 20 shown in FIG. 3A, the display substrate 30 shown in FIG. 4, the display substrate 40 shown in FIG. 5, and the display substrate 60 shown in FIG. 6A) ) Also includes a plurality of sub-pixels. For simplicity of description, the specific sub-pixel structure is not shown in FIG. 1A (and FIG. 3A, FIG. 4-FIG. 6A).
  • the display substrate 50 includes a base substrate 510 and a light-emitting element 550 (ie, a display device), and the base substrate 510 is a silicon substrate.
  • the silicon substrate 510 includes a silicon-based base substrate 511, a pixel driving circuit 512, a light reflection layer 513, and an insulating layer 514 that are sequentially stacked.
  • the light-emitting element 550 includes a first electrode 520 (for example, an anode), a light-emitting function layer 530, and a second electrode 540 (for example, a cathode) which are sequentially stacked and disposed on the insulating layer 514.
  • the first electrode 520 is a transparent electrode layer.
  • the insulating layer 514 is light-transmissive so that the light emitted by the light-emitting function layer 530 penetrates therethrough and reaches the light reflection layer 513 to be reflected by the light reflection layer 513.
  • the insulating layer 514 includes a via 516 filled with a metal member 515, and the light reflection layer 513 is electrically connected to the first electrode 520 through the metal member 515.
  • the electrical signal for example, the first electrode driving current
  • the reflective layer 513 is transferred to the first electrode 520. In this way, it is not only beneficial to realize the control of the light-emitting element 550 by the pixel driving circuit 512, but also makes the structure of the display substrate 50 more compact, which is beneficial to the miniaturization of the device.
  • the metal member 515 is made of a metal material, such as tungsten metal, and a via filled with tungsten metal is also called a tungsten via (W-via).
  • a metal material such as tungsten metal
  • W-via tungsten via
  • the thickness of the insulating layer 514 is large, the formation of tungsten vias in the insulating layer 514 can ensure the stability of the conductive path.
  • the surface of the resulting insulating layer 514 is flat. The temperature is good, which is beneficial to reduce the contact resistance between the insulating layer 514 and the first electrode 520.
  • the tungsten via is not only suitable for realizing the electrical connection between the insulating layer 514 and the first electrode 520, but also suitable for the electrical connection between the light reflective layer 513 and the pixel driving circuit 512, and other wiring layers, such as The electrical connection between the respective electrodes of the driving transistor, the switching transistor and the capacitor in the pixel circuit and the layer where the signal line is located.
  • the silicon substrate 510 includes a pixel driving circuit 512, the pixel driving circuit 512 and the light reflective layer 513 are electrically connected to each other, and the pixel driving circuit 512 is used to drive the light emitting element 550 to emit light.
  • the pixel driving circuit 512 includes at least a driving transistor M0 and a switching transistor (not shown in the figure), and the driving transistor M0 and the light reflection layer 513 are electrically connected to each other.
  • the electrical signal for driving the light emitting element 550 can be transmitted to the first electrode 520 through the light reflective layer 513, thereby controlling the light emitting element 550 to emit light.
  • the driving transistor M0 includes a gate electrode G, a source electrode S, and a drain electrode D.
  • the source electrode S of the driving transistor M0 is electrically connected to the light reflection layer 513.
  • the electrical signal provided by the power line may be transmitted to the first electrode 520 through the source electrode S and the light reflection layer 513 of the driving transistor M0. Since a voltage difference is formed between the first electrode 520 and the second electrode 540, an electric field is formed between the two, and the light-emitting function layer 530 emits light under the action of the electric field. It can be understood that, in the driving transistor M0, the positions of the source electrode S and the drain electrode D are interchangeable. Therefore, one of the source electrode S and the drain electrode D and the light reflection layer 513 may be electrically connected to each other.
  • the display substrate 50 includes a plurality of sub-pixels (or pixel units), and three sub-pixels, namely, a red sub-pixel SP1, a green sub-pixel SP2, and a blue sub-pixel SP3 are exemplarily shown in FIG. 7.
  • Each sub-pixel corresponds to a sub-pixel area of the display substrate 50. That is, each sub-pixel is provided with an independent light-emitting element 550 and a driving transistor M0.
  • the insulating layer 514 in the three sub-pixels is integrally formed to facilitate fabrication.
  • the insulating layer 514 further includes an opening 518 exposing the pad 517.
  • the arrangement of the opening 518 facilitates the electrical connection and signal communication between the pad 517 and an external circuit.
  • the opening 518 of the exposed pad 517 is located in the peripheral area 582 of the display substrate 50, for example, it may be located between the auxiliary electrode of the display substrate 50 and the display area 581.
  • the color of the sub-pixels in the display substrate 50 is only illustrative, and may also include other colors such as yellow and white.
  • the display substrate 50 further includes a second thin film encapsulation layer 16, a color film layer 17 and a first thin film encapsulation layer 18 that are sequentially disposed on the second electrode 540.
  • the display substrate 50 further includes a cover plate 19, and the cover plate 19 is disposed on the first film encapsulation layer 18.
  • the second thin-film encapsulation layer 16 is located on the side of the second electrode 540 away from the silicon base substrate 511.
  • the color filter layer 17 is located on the side of the second thin film encapsulation layer 16 away from the silicon base substrate 511, and includes a red filter unit R, a green filter unit G, and a blue filter unit B.
  • the first thin film encapsulation layer 18 and the cover plate 19 are located on the side of the color filter layer 17 away from the silicon base substrate 511.
  • the specific materials of the first thin film encapsulation layer 18, the color film layer 17, the second thin film encapsulation layer 16, and the cover plate 19 conventional materials in the art can be used, which will not be described in detail here.
  • the orthographic projection of the light-emitting function layer 530 on the silicon substrate 510 is within the orthographic projection of the color filter layer 17 on the silicon substrate 510.
  • the light emitting element 550 including the first electrode 520, the light emitting function layer 530 and the second electrode 540, the first thin film encapsulation layer 18, the color film layer 17, and the second thin film encapsulation Both the layer 16 and the cover plate 19 are finished in the panel factory.
  • the insulating layer 514 above the pad 517 is also etched in the panel factory to expose the pad 517 and bind it to a flexible printed circuit board (FPC) or wire (Wire).
  • FPC flexible printed circuit board
  • Wire wire
  • the silicon substrate 510 including the light reflective layer 513 and the insulating layer 514 and suitable for forming the light emitting element 550 can be manufactured by a fab, which not only reduces the manufacturing difficulty of the light reflective layer 513, but also Conducive to the follow-up process of the panel factory.
  • FIG. 8 is a schematic diagram of a circuit principle of a display substrate provided by some embodiments of the present disclosure.
  • the circuit structure includes a plurality of light-emitting elements 550 (ie, the light-emitting element L shown in FIG. 8) located in the display area 581 (AA area) of the display substrate 50 shown in FIG.
  • the pixel driving circuit 512 includes a driving transistor.
  • the circuit structure may further include a plurality of voltage control circuits 620 located in a non-display area (that is, an edge area of the display substrate) outside the display area 581 of the display substrate.
  • At least two pixel drive circuits 512 in a row share a voltage control circuit 620, and the first pole of the drive transistor in a row of pixel drive circuit 512 is coupled to the common voltage control circuit 620, and the second pole of each drive transistor corresponds to The light-emitting element L is coupled.
  • the voltage control circuit 620 is configured to output an initialization signal Vinit to the first pole of the driving transistor in response to the reset control signal RE, and control the corresponding light-emitting element L to reset; and in response to the light-emission control signal EM, output the first power signal VDD To the first pole of the driving transistor to drive the light-emitting element L to emit light.
  • the voltage control circuit 620 By sharing the voltage control circuit 620, the structure of each pixel drive circuit in the display area can be simplified, and the occupied area of the pixel drive circuit in the display area can be reduced, so that more pixel drive circuits and light-emitting elements can be arranged in the display area, and the The display panel or display device of the display substrate realizes a high PPI organic light emitting display panel.
  • the voltage control circuit 620 outputs the initialization signal Vinit to the first pole of the driving transistor under the control of the reset control signal RE to control the reset of the corresponding light-emitting element, so as to avoid the voltage pair applied to the light-emitting element when the previous frame emits light. The effect of the next frame of light, thereby improving the afterimage phenomenon.
  • the display substrate may further include a plurality of pixel units PX located in the display area 581, and each pixel unit PX includes a plurality of sub-pixels; each sub-pixel includes a light-emitting element L and a pixel driving circuit 512, respectively.
  • the pixel unit PX may include three sub-pixels of different colors. The three sub-pixels may be red sub-pixels, green sub-pixels, and blue sub-pixels, respectively.
  • the pixel unit PX may also include 4, 5 or more sub-pixels, which need to be designed and determined according to the actual application environment, which is not limited here.
  • the pixel driving circuits 512 in at least two adjacent sub-pixels in the same row may share one voltage control circuit 620.
  • all the pixel driving circuits 512 in the same row may share one voltage control circuit 620.
  • the pixel driving circuits 512 in two, three or more adjacent sub-pixels in the same row may share one voltage control circuit 620, which is not limited here. In this way, the area occupied by the pixel drive circuit in the display area can be reduced by sharing the voltage control circuit.
  • FIG. 9 is a circuit diagram of a specific implementation example of a voltage control circuit and a pixel driving circuit of a display substrate provided by some embodiments of the present disclosure.
  • the driving transistor M0 in the pixel driving circuit 512 may be an N-type transistor.
  • the light emitting element L may include an OLED.
  • the anode of the OLED is electrically connected to the second terminal D of the driving transistor M0, and the cathode of the OLED is electrically connected to the second power terminal VSS.
  • the voltage of the second power terminal VSS is generally a negative voltage or the ground voltage VGND (generally 0V), and the voltage of the initialization signal Vinit can also be set to the ground voltage VGND, which is not limited here.
  • the OLED can be configured as a Micro-OLED or a Mini-OLED, which is further advantageous for the display panel or display device including the display substrate to realize a high PPI organic light-emitting display panel.
  • the voltage control circuit 620 may include a first switching transistor M1 and a second switching transistor M2.
  • the gate of the first switch transistor M1 is used to receive the reset control signal RE
  • the first pole of the first switch transistor M1 is used to receive the initialization signal Vinit
  • the second pole of the first switch transistor M1 corresponds to the first pole of the corresponding driving transistor M0. ⁇ S coupling.
  • the gate of the second switch transistor M2 is used to receive the light emission control signal EM
  • the first pole of the second switch transistor M2 is used to receive the first power signal VDD
  • the second pole of the second switch transistor M2 is connected to the corresponding drive transistor M0.
  • the first pole S is coupled.
  • the types of the first switching transistor M1 and the second switching transistor M2 may be different.
  • the first switch transistor M1 is an N-type transistor
  • the second switch transistor M2 is a P-type transistor
  • the first switch transistor M1 is a P-type transistor
  • the second switch transistor M2 is an N-type transistor.
  • the type of the first switching transistor M1 and the second switching transistor M2 can also be the same.
  • the types of the first switching transistor M1 and the second switching transistor M2 need to be designed according to the actual application environment, which is not limited here.
  • the pixel driving circuit 512 may further include a third switching transistor M3 and a storage capacitor Cst.
  • the gate of the third switch transistor M3 is used to receive the first gate scan signal S1
  • the first pole of the third switch transistor M3 is used to receive the data signal DA
  • the second pole of the third switch transistor M3 is connected to the driving transistor M0.
  • the gate G is coupled.
  • the first terminal of the storage capacitor Cst is coupled to the gate G of the driving transistor M0, and the second terminal of the storage capacitor Cst is coupled to the ground terminal GND.
  • the pixel driving circuit 512 may further include a fourth switch transistor M4.
  • the gate of the fourth switch transistor M4 is used to receive the second gate scanning signal S2, the first pole of the fourth switch transistor M4 is used to receive the data signal DA, and the second pole of the fourth switch transistor M4 is connected to the driving transistor M0.
  • the gate G is coupled.
  • the type of the fourth switching transistor M4 and the third switching transistor M3 are different.
  • the third switch transistor M3 is an N-type transistor
  • the fourth switch transistor M4 is a P-type transistor
  • the fourth switch transistor M4 is an N-type transistor.
  • the data signal DA when the voltage of the data signal DA is a voltage corresponding to a high gray scale, the data signal DA is transmitted to the gate G of the driving transistor M0 by, for example, the P-type fourth switch transistor M4 is turned on, which can avoid data
  • the voltage of the signal DA is affected by, for example, the threshold voltage of the N-type third switching transistor M3.
  • the N-type third switch transistor M3 When the voltage of the data signal DA is a voltage corresponding to a low gray scale, for example, the N-type third switch transistor M3 is turned on to transmit the data signal DA to the gate G of the driving transistor M0, which can prevent the voltage of the data signal DA from being affected.
  • the influence of the threshold voltage of the P-type fourth switching transistor M4. This can increase the voltage range input to the gate G of the driving transistor M0.
  • the driving transistor M0, the first switching transistor M1, the second switching transistor M2, the third switching transistor M3, and the fourth switching transistor M4 are all MOS transistors prepared in a silicon substrate.
  • the embodiments of the present disclosure do not provide all the constituent units of the display substrate.
  • those skilled in the art can provide and set other structures not shown according to specific needs, and the embodiments of the present disclosure do not limit this.
  • At least one embodiment of the present disclosure further provides a display panel, including the display substrate according to any embodiment of the present disclosure.
  • a display panel including the display substrate according to any embodiment of the present disclosure.
  • it may include the display substrate 10 shown in FIG. 1A, the display substrate 20 shown in FIG. 3A, and the display substrate 20 shown in FIG.
  • the display panel provided by the embodiment of the present disclosure may be a virtual reality device or an augmented reality device.
  • the display panel provided by the embodiment of the present disclosure may be a silicon-based OLED display panel or a silicon-based QLED display panel, which is not limited by the embodiment of the present disclosure.
  • the display panel may also be an electronic paper display panel or other types of panels with display functions, which are not limited in the embodiments of the present disclosure.
  • the display panel may be any product or component with display function such as electronic paper, mobile phone, tablet computer, television, monitor, notebook computer, digital photo frame, navigator, etc.
  • display function such as electronic paper, mobile phone, tablet computer, television, monitor, notebook computer, digital photo frame, navigator, etc.
  • the embodiment of the present disclosure does not limit this.
  • At least one embodiment of the present disclosure further provides a method for preparing a display substrate, including: providing a base substrate; forming a first electrode on the base substrate; forming a light-emitting functional layer on the first electrode; and forming a light-emitting functional layer The second electrode.
  • the second electrode covers at least one surface of the light-emitting function layer and a part of the surface away from the base substrate.
  • the first electrode, the light-emitting functional layer and the second electrode constitute a light-emitting element.
  • the light-emitting functional layer includes a first functional layer and a second functional layer located on the side of the first functional layer away from the base substrate, and at least one surface of the light-emitting functional layer The shape of is formed so that the portion of the second electrode covering at least one side surface of the light-emitting function layer has a component extending laterally along the surface of the base substrate.
  • At least one embodiment of the present disclosure further provides a method for preparing a display substrate, including: providing a base substrate; forming a first electrode on the base substrate; forming a light-emitting functional layer on the first electrode; and forming a light-emitting functional layer The second electrode.
  • the first electrode, the light-emitting functional layer and the second electrode constitute a light-emitting element.
  • the light-emitting functional layer includes a first functional layer and a second functional layer located on the side of the first functional layer away from the base substrate. The edge of the second functional layer is on the liner.
  • the orthographic projection on the base substrate is located within the orthographic projection of the edge of the first functional layer on the base substrate, and the area of the orthographic projection of the second functional layer on the base substrate is smaller than that of the first functional layer on the base substrate.
  • Projected area; the second electrode covers at least one side surface of the light-emitting function layer and a part of the surface away from the base substrate, and is in contact with at least one side surface of the light-emitting function layer and a part of the surface away from the base substrate.
  • FIG. 10 is a flowchart of a method for manufacturing a display substrate provided by some embodiments of the present disclosure.
  • the preparation method of the display substrate includes the following steps.
  • Step S10 Provide a base substrate.
  • Step S20 forming a first electrode on the base substrate.
  • Step S30 forming a light-emitting function layer on the first electrode.
  • Step S40 forming a second electrode on the light-emitting function layer.
  • the second electrode covers at least one surface of the light-emitting function layer and a part of the surface away from the base substrate.
  • the part of the prepared display substrate where the second electrode covers the side surface of the light-emitting function layer can have a component extending laterally along the surface of the base substrate, for example, the second electrode can cover the side surface of the light-emitting function layer.
  • the portion of the side surface of the light-emitting functional layer is stepped or sloped along the side surface of the light-emitting functional layer, so that the portion of the second electrode covering at least one side surface of the light-emitting functional layer is in a direction perpendicular to the surface of the base substrate.
  • the drop is reduced, that is, the drop of the second electrode at the edge of the film layer of the light-emitting element is reduced.
  • the second electrode in the prepared display substrate can be reduced or prevented from disconnecting at the edge of the film layer of the light-emitting element, so that the electrical connectivity of the second electrode is significantly improved, thereby improving the overall performance of the prepared display substrate And the service life, and further improve the overall performance and service life of the display panel or the display device including the prepared display substrate.
  • the surface of the first functional layer away from the base substrate includes a portion covered by the second functional layer, and the surface of the first functional layer away from the base substrate is divided by the second functional layer.
  • the part other than the part covered by the functional layer is in contact with the second electrode.
  • the portion of the second electrode covering at least one side surface of the light-emitting function layer has a component extending laterally along the surface of the base substrate.
  • the first functional layer is in contact with the second functional layer, and the surface of the first functional layer away from the base substrate includes a portion in contact with the second functional layer and a second electrode.
  • Contact portion; the side surface of the first functional layer, the portion of the first functional layer that is away from the surface of the base substrate that is in contact with the second electrode, and the side surface of the second functional layer are in contact with each other and form a first surface on at least one side A step structure
  • the second electrode covers the first step structure and is in contact with the first step structure.
  • the preparation method provided by some embodiments of the present disclosure further includes: forming a third functional layer on a side of the second functional layer away from the base substrate.
  • the orthographic projection of the edge of the third functional layer on the base substrate is located within the orthographic projection of the edge of the second functional layer on the base substrate, and the area of the orthographic projection of the third functional layer on the base substrate is smaller than that of the second functional layer The area of the orthographic projection of the layer on the base substrate.
  • the second functional layer is in contact with the third functional layer, and the surface of the second functional layer away from the base substrate includes the part contacting the third functional layer and the second electrode.
  • Contact part; the side surface of the second functional layer, the part of the second functional layer that is away from the surface of the base substrate that is in contact with the second electrode, and the side surface of the third functional layer are in contact with each other and form a first on at least one side surface
  • the second electrode covers the second step structure and is in contact with the second step structure.
  • the portion of the second electrode covering the first step structure and the second step structure has a first step structure on at least one side surface of the light-emitting function layer.

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Abstract

一种显示基板及其制备方法、显示面板，该显示基板包括衬底基板、第一电极、发光功能层和第二电极。第一电极位于衬底基板上，发光功能层位于第一电极远离衬底基板的一侧，第二电极位于发光功能层远离第一电极的一侧，第一电极、发光功能层和第二电极构成发光元件；发光功能层包括第一功能层和位于第一功能层远离衬底基板的一侧的第二功能层，第二功能层的边缘在衬底基板上的正投影位于第一功能层的边缘在衬底基板上的正投影内，且第二功能层在衬底基板上的正投影的面积小于第一功能层在衬底基板上的正投影的面积；第二电极覆盖发光功能层的至少一侧表面和远离衬底基板的部分表面，且与发光功能层的至少一侧表面和远离衬底基板的部分表面接触。

Description

显示基板、显示面板及显示基板的制备方法 技术领域
本公开的实施例涉及一种显示基板、显示面板及显示基板的制备方法。
背景技术
有机发光二极管(Organic Light-Emitting Diode，OLED)显示装置具有厚度薄、重量轻、宽视角、主动发光、发光颜色连续可调、成本低、响应速度快、能耗小、驱动电压低、工作温度范围宽、生产工艺简单、发光效率高及可柔性显示等优点，其在手机、平板电脑、数码相机等显示领域的应用越来越广泛。
硅基有机发光二极管(简称硅基OLED)显示装置是一种以硅基板为衬底的新型OLED显示装置。硅基OLED显示装置具有体积小、分辨率高等优点。硅基OLED显示装置采用成熟的集成电路CMOS工艺制成，实现了像素的有源寻址，并且具有TCON(控制板或逻辑板)、OCP(操作控制面板)等多种电路结构，可以实现轻量化设计。
发明内容
本公开至少一个实施例提供一种显示基板，包括：衬底基板、第一电极、发光功能层和第二电极，其中，所述第一电极位于所述衬底基板上，所述发光功能层位于所述第一电极远离所述衬底基板的一侧，所述第二电极位于所述发光功能层远离所述第一电极的一侧，所述第一电极、所述发光功能层和所述第二电极构成发光元件；所述发光功能层包括第一功能层和位于所述第一功能层远离所述衬底基板的一侧的第二功能层，所述第二功能层的边缘在所述衬底基板上的正投影位于所述第一功能层的边缘在所述衬底基板上的正投影内，且所述第二功能层在所述衬底基板上的正投影的面积小于所述第一功能层在所述衬底基板上的正投影的面积；所述第二电极覆盖所述发光功能层的至少一侧表面和远离所述衬底基板的部分表面，且与所述发光功能层的至少一侧表面和远离所述衬底基板的部分表面接触。
例如，在本公开至少一个实施例提供的显示基板中，所述第一功能层远离所述衬底基板的表面包括被所述第二功能层覆盖的部分，所述第一功能层远离所述衬底基板的表面的除所述被所述第二功能层覆盖的部分以外的部分与所述第二电极接触。
例如，在本公开至少一个实施例提供的显示基板中，所述第一功能层在所述衬底基板上的正投影的轮廓与所述第二功能层在所述衬底基板上的正投影的轮廓大致相同。
例如，在本公开至少一个实施例提供的显示基板中，所述第一功能层在所述衬底基板上的正投影的中心与所述第二功能层在所述衬底基板上的正投影的中心大致重合。
例如，在本公开至少一个实施例提供的显示基板中，所述第二电极覆盖所述发光功能层的至少一侧表面的部分具有沿所述衬底基板的表面横向延伸的分量。
例如，在本公开至少一个实施例提供的显示基板中，所述第一功能层与所述第二功能层接触，所述第一功能层远离所述衬底基板的表面包括与所述第二功能层接触的部分以及与所述第二电极接触的部分；所述第一功能层的侧表面、所述第一功能层远离所述衬底基板的表面的与所述第二电极接触的部分、以及所述第二功能层的侧表面彼此相接且在所述至少一侧表面形成第一台阶结构，所述第二电极覆盖所述第一台阶结构且与所述第一台阶结构接触。
例如，在本公开至少一个实施例提供的显示基板中，所述发光功能层还包括位于所述第二功能层远离所述衬底基板的一侧的第三功能层；所述第三功能层的边缘在所述衬底基板上的正投影位于所述第二功能层的边缘在所述衬底基板上的正投影内，且所述第三功能层在所述衬底基板上的正投影的面积小于所述第二功能层在所述衬底基板上的正投影的面积。
例如，在本公开至少一个实施例提供的显示基板中，所述第二功能层与所述第三功能层接触，所述第二功能层远离所述衬底基板的表面包括与所述第三功能层接触的部分以及与所述第二电极接触的部分；所述第二功能层的侧表面、所述第二功能层远离所述衬底基板的表面的与所述第二电极接触的部分、以及所述第三功能层的侧表面彼此相接且在所述至少一侧表面形成第 二台阶结构，所述第二电极覆盖所述第二台阶结构且与所述第二台阶结构接触。
例如，在本公开至少一个实施例提供的显示基板中，所述第二电极覆盖所述第一台阶结构和所述第二台阶结构的部分在所述发光功能层的所述至少一侧表面具有第一阶梯结构。
例如，在本公开至少一个实施例提供的显示基板中，所述发光功能层还包括位于所述第三功能层远离所述衬底基板的一侧的第四功能层；所述第四功能层的边缘在所述衬底基板上的正投影位于所述第三功能层的边缘在所述衬底基板上的正投影内，且所述第四功能层在所述衬底基板上的正投影的面积小于所述第三功能层在所述衬底基板上的正投影的面积。
例如，在本公开至少一个实施例提供的显示基板中，所述第三功能层与所述第四功能层接触，所述第三功能层远离所述衬底基板的表面包括与所述第四功能层接触的部分以及与所述第二电极接触的部分；所述第三功能层的侧表面、所述第三功能层远离所述衬底基板的表面的与所述第二电极接触的部分、以及所述第四功能层的侧表面彼此相接且在所述至少一侧表面形成第三台阶结构，所述第二电极覆盖所述第三台阶结构且与所述第三台阶结构接触。
例如，在本公开至少一个实施例提供的显示基板中，所述第二电极覆盖所述第二台阶结构和所述第三台阶结构的部分在所述发光功能层的所述至少一侧表面具有第二阶梯结构。
例如，在本公开至少一个实施例提供的显示基板中，所述发光功能层还包括位于所述第四功能层远离所述衬底基板的一侧的第五功能层；所述第五功能层的边缘在所述衬底基板上的正投影位于所述第四功能层的边缘在所述衬底基板上的正投影内，且所述第五功能层在所述衬底基板上的正投影的面积小于所述第四功能层在所述衬底基板上的正投影的面积。
例如，在本公开至少一个实施例提供的显示基板中，所述第四功能层与所述第五功能层接触，所述第四功能层远离所述衬底基板的表面包括与所述第五功能层接触的部分以及与所述第二电极接触的部分；所述第四功能层的侧表面、所述第四功能层远离所述衬底基板的表面的与所述第二电极接触的部分、以及所述第五功能层的侧表面彼此相接且在所述至少一侧表面形成第 四台阶结构，所述第二电极覆盖所述第四台阶结构且与所述第四台阶结构接触。
例如，在本公开至少一个实施例提供的显示基板中，所述第二电极覆盖所述第三台阶结构和所述第四台阶结构的部分在所述发光功能层的所述至少一侧表面具有第三阶梯结构。
例如，在本公开至少一个实施例提供的显示基板中，所述第一功能层为空穴注入层，所述第二功能层为空穴传输层，所述第三功能层为发光层，所述第四功能层为电子传输层，所述第五功能层为电子注入层。
例如，在本公开至少一个实施例提供的显示基板中，所述显示基板包括显示区域和围绕所述显示区域的周边区域，所述显示基板还包括位于所述周边区域中的辅助电极，其中，所述辅助电极至少部分环绕所述显示区域；所述第一电极位于所述显示区域中，所述第二电极位于所述显示区域和所述周边区域中，且在所述周边区域中通过过孔或直接接触与所述辅助电极电连接。
例如，在本公开至少一个实施例提供的显示基板中，所述衬底基板为硅基板，且所述硅基板包括像素驱动电路，所述像素驱动电路被配置为与所述第一电极电连接。
例如，在本公开至少一个实施例提供的显示基板中，所述辅助电极与所述第一电极同层设置且彼此绝缘，所述辅助电极的材料与所述第一电极的材料相同。
例如，在本公开至少一个实施例提供的显示基板中，所述周边区域包括连接电极区和传感器区，所述连接电极区至少部分环绕所述传感器区，所述传感器区至少部分环绕所述显示区域；所述辅助电极位于所述连接电极区中，所述传感器区在所述衬底基板上的正投影位于所述发光功能层中的任一功能层在所述衬底基板上的正投影内。
例如，在本公开至少一个实施例提供的显示基板中，所述周边区域还包括第一虚设子区和第二虚设子区，所述连接电极区至少部分环绕所述第一虚设子区，所述第一虚设子区至少部分环绕所述传感器区；所述传感器区至少部分环绕所述第二虚设子区，所述第二虚设子区至少部分环绕所述显示区域；所述发光功能层位于所述显示区域、所述第二虚设子区、所述传感器区和所述第一虚设子区中。
例如，在本公开至少一个实施例提供的显示基板中，在所述辅助电极与所述第一功能层的侧表面接触的情形，所述第一台阶结构为所述第一功能层远离所述衬底基板的表面的与所述第二电极接触的部分、以及所述第二功能层的侧表面。
例如，本公开至少一个实施例提供的显示基板还包括彩膜层，其中，所述彩膜层位于所述第二电极远离所述衬底基板的一侧，所述发光功能层在所衬底基板上的正投影位于所述彩膜层在所述衬底基板上的正投影内。
例如，在本公开至少一个实施例提供的显示基板中，所述显示基板为有机发光二极管显示基板或者量子点发光二极管显示基板。
本公开至少一个实施例还提供一种显示面板，包括本公开任一实施例所述的显示基板。
本公开至少一个实施例还提供一种显示基板的制备方法，包括：提供衬底基板；在所述衬底基板上形成第一电极；在所述第一电极上形成发光功能层；以及在所述发光功能层上形成第二电极；其中，所述第一电极、所述发光功能层和所述第二电极构成发光元件，所述发光功能层包括第一功能层和位于所述第一功能层远离所述衬底基板的一侧的第二功能层，所述第二功能层的边缘在所述衬底基板上的正投影位于所述第一功能层的边缘在所述衬底基板上的正投影内，且所述第二功能层在所述衬底基板上的正投影的面积小于所述第一功能层在所述衬底基板上的正投影的面积；所述第二电极覆盖所述发光功能层的至少一侧表面和远离所述衬底基板的部分表面，且与所述发光功能层的至少一侧表面和远离所述衬底基板的部分表面接触。
例如，在本公开至少一个实施例提供的制备方法中，所述第一功能层远离所述衬底基板的表面包括被所述第二功能层覆盖的部分，所述第一功能层远离所述衬底基板的表面的除所述被所述第二功能层覆盖的部分以外的部分与所述第二电极接触。
例如，在本公开至少一个实施例提供的制备方法中，所述第二电极覆盖所述发光功能层的至少一侧表面的部分具有沿所述衬底基板的表面横向延伸的分量。
例如，在本公开至少一个实施例提供的制备方法中，所述第一功能层与所述第二功能层接触，所述第一功能层远离所述衬底基板的表面包括与所述 第二功能层接触的部分以及与所述第二电极接触的部分；所述第一功能层的侧表面、所述第一功能层远离所述衬底基板的表面的与所述第二电极接触的部分、以及所述第二功能层的侧表面彼此相接且在所述至少一侧表面形成第一台阶结构，所述第二电极覆盖所述第一台阶结构且与所述第一台阶结构接触。
例如，本公开至少一个实施例提供的制备方法还包括在所述第二功能层远离所述衬底基板的一侧形成第三功能层，其中，所述第三功能层的边缘在所述衬底基板上的正投影位于所述第二功能层的边缘在所述衬底基板上的正投影内，且所述第三功能层在所述衬底基板上的正投影的面积小于所述第二功能层在所述衬底基板上的正投影的面积。
例如，在本公开至少一个实施例提供的制备方法中，所述第二功能层与所述第三功能层接触，所述第二功能层远离所述衬底基板的表面包括与所述第三功能层接触的部分以及与所述第二电极接触的部分；所述第二功能层的侧表面、所述第二功能层远离所述衬底基板的表面的与所述第二电极接触的部分、以及所述第三功能层的侧表面彼此相接且在所述至少一侧表面形成第二台阶结构，所述第二电极覆盖所述第二台阶结构且与所述第二台阶结构接触。
例如，在本公开至少一个实施例提供的制备方法中，所述第二电极覆盖所述第一台阶结构和所述第二台阶结构的部分在所述发光功能层的所述至少一侧表面具有第一阶梯结构。
附图说明
为了更清楚地说明本公开实施例的技术方案，下面将对实施例的附图作简单地介绍，显而易见地，下面描述中的附图仅仅涉及本公开的一些实施例，而非对本公开的限制。
图1A为本公开一些实施例提供的一种显示基板的部分截面结构的示意图；
图1B为图1A中所示的S1部分的具体示例的示意图；
图2为本公开一些实施例提供的一种显示基板的部分平面结构的示意图；
图3A为本公开一些实施例提供的另一种显示基板的部分截面结构的示意图；
图3B为图3A中所示的显示基板的发光功能层的平面结构的示意图；
图4为本公开一些实施例提供的再一种显示基板的部分截面结构的示意图；
图5为本公开一些实施例提供的再一种显示基板的部分截面结构的示意图；
图6A为本公开一些实施例提供的再一种显示基板的部分截面结构的示意图；
图6B为本公开一些实施例提供的一种显示基板的区域划分示意图；
图7为本公开一些实施例提供的再一种显示基板的部分截面结构的示意图；
图8为本公开一些实施例提供的一种显示基板的电路原理示意图；
图9为本公开一些实施例提供的一种显示基板的电压控制电路和像素驱动电路的具体实现示例的电路图；以及
图10为本公开一些实施例提供的一种显示基板的制备方法的流程图。
具体实施方式
为使本公开实施例的目的、技术方案和优点更加清楚，下面将结合本公开实施例的附图，对本公开实施例的技术方案进行清楚、完整地描述。显然，所描述的实施例是本公开的一部分实施例，而不是全部的实施例。基于所描述的本公开的实施例，本领域普通技术人员在无需创造性劳动的前提下所获得的所有其他实施例，都属于本公开保护的范围。
除非另作定义，此处使用的技术术语或者科学术语应当为本公开所属领域内具有一般技能的人士所理解的通常意义。本公开中使用的“第一”、“第二”以及类似的词语并不表示任何顺序、数量或者重要性，而只是用来区分不同的组成部分。同样，“一个”、“一”或者“该”等类似词语也不表示数量限制，而是表示存在至少一个。“包括”或者“包含”等类似的词语意指出现该词前面的元件或者物件涵盖出现在该词后面列举的元件或者物件及其等同，而不排除其他元件或者物件。“连接”或者“相连”等类似的词语并非限定于物理 的或者机械的连接，而是可以包括电性的连接，不管是直接的还是间接的。“上”、“下”、“左”、“右”等仅用于表示相对位置关系，当被描述对象的绝对位置改变后，则该相对位置关系也可能相应地改变。
目前，硅基OLED显示装置具有体积小、分辨率高等优点，被广泛地应用于虚拟现实(Virtual Reality，简称VR)或增强现实(Augmented Reality，简称AR)等近眼显示领域中。但是，由于硅基OLED显示装置中发光元件的膜层边缘通常对齐排布，并且发光元件的膜层总厚度较厚，因此，发光元件中位于发光功能层上的阴极(或阳极)在膜层边缘处往往会出现较大落差，从而导致阴极(或阳极)在膜层边缘处容易发生断路，对阴极(或阳极)的电连接性能产生严重的不良影响，进而降低了硅基OLED显示装置的整体性能和使用寿命。
本公开至少一个实施例提供一种显示基板，该显示基板可以减小发光元件中位于发光功能层上的电极沿发光功能层的侧表面的落差，即，减小该电极在发光元件的膜层边缘处的落差，从而减少或避免该电极在发光元件的膜层边缘处发生断路的风险，使电极的电连接性能得到显著改善，进而提升显示基板的整体性能和使用寿命，且进一步提升包括该显示基板的显示面板或显示装置的整体性能和使用寿命。
下面，将参考附图详细地说明本公开的一些实施例。应当注意的是，不同的附图中相同的附图标记将用于指代已描述的相同的元件。
本公开至少一个实施例提供一种显示基板，该显示基板包括衬底基板、第一电极、发光功能层和第二电极。第一电极位于衬底基板上，发光功能层位于第一电极远离衬底基板的一侧，第二电极位于发光功能层远离第一电极的一侧，第一电极、发光功能层和第二电极构成发光元件，且第二电极还覆盖发光功能层的至少一侧表面和远离衬底基板的部分表面；发光功能层包括第一功能层和位于第一功能层远离衬底基板的一侧的第二功能层；发光功能层的至少一侧表面的形状被配置为使得第二电极覆盖至少一侧表面的部分具有沿衬底基板的表面横向延伸的分量。
在本公开的至少一个实施例提供的显示基板中，通过使发光元件中的第二电极覆盖发光功能层的至少一侧表面的部分具有沿衬底基板的表面横向延伸的分量，例如使第二电极覆盖发光功能层的至少一侧表面的部分沿发光功 能层的侧表面呈阶梯状或斜坡状，从而使第二电极覆盖发光功能层的至少一侧表面的部分在垂直于衬底基板的表面的方向上的落差减小，即，使第二电极在发光元件的膜层边缘处的落差减小。由此，可以减少或避免第二电极在发光元件的膜层边缘处发生断路的风险，使第二电极的电连接性能得到显著改善，进而提升显示基板的整体性能和使用寿命，且进一步提升包括该显示基板的显示面板或显示装置的整体性能和使用寿命。
例如，在本公开的一些实施例中，为了使发光元件中的第二电极覆盖发光功能层的至少一侧表面的部分具有沿衬底基板的表面横向延伸的分量，第二电极覆盖发光功能层的至少一侧表面的部分可以呈阶梯状、斜坡状或其他适合的形状，本公开的实施例对此不作限制。
本公开至少一个实施例提供一种显示基板，该显示基板包括衬底基板、第一电极、发光功能层和第二电极。第一电极位于衬底基板上，发光功能层位于第一电极远离衬底基板的一侧，第二电极位于发光功能层远离第一电极的一侧，第一电极、发光功能层和第二电极构成发光元件。发光功能层包括第一功能层和位于第一功能层远离衬底基板的一侧的第二功能层，第二功能层的边缘在衬底基板上的正投影位于第一功能层的边缘在衬底基板上的正投影内，且第二功能层在衬底基板上的正投影的面积小于第一功能层在衬底基板上的正投影的面积；第二电极覆盖发光功能层的至少一侧表面和远离衬底基板的部分表面，且与发光功能层的至少一侧表面和远离衬底基板的部分表面接触。
在本公开的至少一个实施例提供的显示基板中，通过第一功能层和第二功能层的配合设计，例如使第一功能层和第二功能层在发光元件的膜层边缘处形成斜坡结构或台阶结构，从而使第二电极覆盖且接触发光功能层的至少一侧表面的部分沿发光功能层的侧表面呈斜坡状或阶梯状，从而使第二电极覆盖发光功能层的至少一侧表面的部分在垂直于衬底基板的表面的方向上的落差减小，即，使第二电极在发光元件的膜层边缘处的落差减小。由此，可以减少或避免第二电极在发光元件的膜层边缘处发生断路的风险，使第二电极的电连接性能得到显著改善，进而提升显示基板的整体性能和使用寿命，且进一步提升包括该显示基板的显示面板或显示装置的整体性能和使用寿命。
下面以第二电极覆盖发光功能层的侧表面的部分呈阶梯状为例，对本公开多个实施例提供的显示基板的结构及功能进行具体说明。
图1A为本公开一些实施例提供的一种显示基板的部分截面结构的示意图，例如为显示基板的发光元件的膜层边缘处的结构示意图。例如，如图1A所示，显示基板10包括：衬底基板110、第一电极120、发光功能层130和第二电极140。第一电极120位于衬底基板110上，发光功能层130位于第一电极120远离衬底基板110的一侧，第二电极140位于发光功能层130远离第一电极120的一侧，第一电极120、发光功能层130和第二电极140构成发光元件150，且第二电极140还覆盖发光功能层130的至少一侧表面和远离衬底基板110的部分表面。
例如，如图1A所示，发光功能层130包括第一功能层131和位于第一功能层131远离衬底基板110的一侧的第二功能层132。第一功能层131覆盖第一电极120的至少一侧表面和衬底基板110的部分表面。第二功能层132的边缘在衬底基板110上的正投影位于第一功能层131的边缘在衬底基板110上的正投影内，且第二功能层132在衬底基板110上的正投影的面积小于第一功能层131在衬底基板110上的正投影的面积。由此，第一功能层131的边缘和第二功能层132的边缘呈不对齐排布，以使第二电极140覆盖且接触第一功能层131和第二功能层132的侧表面的部分具有沿衬底基板110的表面横向延伸的分量。
例如，如图1所示，第一功能层131远离衬底基板110的表面包括被第二功能层132覆盖的部分，第一功能层131远离衬底基板110的表面的除被第二功能层132覆盖的部分以外的部分与第二电极140接触，从而使第二电极140覆盖且接触第一功能层131和第二功能层132的侧表面的部分在垂直于衬底基板110的表面的方向上的落差减小。
例如，第一功能层131在衬底基板110上的正投影的轮廓与第二功能层132在衬底基板110上的正投影的轮廓大致相同。即，第一功能层131的轮廓和第二功能层132的轮廓可以大致相同，例如可以为方形或其他适合的形状等。
例如，第一功能层131在衬底基板110上的正投影的中心与第二功能层132在衬底基板110上的正投影的中心大致重合，进而在第一功能层131的 轮廓和第二功能层132的轮廓大致相同的情形下，使不同位置处的第一功能层131的边缘与第二功能层132的边缘之间的距离均可以大致保持一致。
需要说明的是，在本公开的实施例中，第一功能层131的边缘和第二功能层132的边缘之间的具体距离可以根据显示基板10的具体结构或不同的实际需求进行设置，本公开的实施例对此不作限制。
例如，如图1A所示，第二功能层132的边缘部分与第一功能层131直接接触，即，第二功能层132的边缘部分与第一功能层131之间不设置有任何膜层或结构。
例如，如图1A所示，第一功能层131远离衬底基板110的表面包括与第二功能层132接触的部分以及与第二电极140接触的部分。第一功能层131的侧表面、第一功能层131远离衬底基板110的表面的与第二电极140接触的部分、以及第二功能层132的侧表面彼此相接且在发光功能层130的至少一侧表面形成第一台阶结构161(如图1A中虚线框所示)，第二电极140覆盖第一台阶结构161且与第一台阶结构161接触。
例如，第一台阶结构161的形状及尺寸等可以根据第一功能层131及第二功能层132的尺寸及位置关系等进行相应地调整，本公开的实施例对此不作限制。
第一台阶结构161可以使第二电极140覆盖第一功能层131和第二功能层132的侧表面的部分呈阶梯状，进而可以减小第二电极140覆盖第一功能层131和第二功能层132的侧表面的部分在垂直于衬底基板110的表面的方向上的落差，即，减小第二电极140在发光元件150的膜层边缘处的落差。由此，第一台阶结构161可以减弱或避免第二电极140在发光元件150的膜层边缘处发生断路现象，使第二电极140的电连接性能得到显著改善。
例如，在图1A所示的本公开的一些实施例中，第一电极120为阳极，第二电极140为阴极；或者，第一电极120为阴极，第二电极140为阳极，本公开的实施例对此不作限制。以下各实施例中，第一电极120和第二电极140的设置均与此基本相同或相似，不再赘述。
例如，阳极可以采用透明导电材料制备，例如，该透明导电材料包括氧化铟锡(ITO)、氧化铟锌(IZO)、氧化铟镓(IGO)、氧化镓锌(GZO)、氧化锌(ZnO)、氧化铟(In 2O 3)、氧化铝锌(AZO)和碳纳米管等，以具 有较高的透过率、较高的功函数等。例如，阴极可以采用镁、银等金属及其合金材料或者透明导电材料制备。
例如，在图1A所示的本公开的一些实施例中，第一功能层131和第二功能层132可以分别为空穴注入层和发光层；或者，第一功能层131和第二功能层132可以分别为空穴传输层和发光层；或者，第一功能层131和第二功能层132可以分别为发光层和电子传输层；或者，第一功能层131和第二功能层132可以分别为发光层和电子注入层。本公开的实施例对此不作限制。
例如，发光层的材料可以根据其发射光颜色的不同进行选择，发光层的材料包括荧光发光材料或磷光发光材料，目前，通常采用掺杂体系，即在主体发光材料中混入掺杂材料来得到可用的发光材料，例如，主体发光材料可以采用金属化合物材料、蒽的衍生物、芳香族二胺类化合物、三苯胺化合物、芳香族三胺类化合物、联苯二胺衍生物或三芳胺聚合物等。
例如，衬底基板110可以为晶圆(硅晶片)，第一电极120例如可以通过化学气相沉积的方法形成在衬底基板110上。该过程可以通过晶圆厂商或发光元件厂商(例如OLED显示器件厂商)所采用的常规工艺进行制备，本公开的实施例对此不作限制。
例如，第一功能层131和第二功能层132可以使用掩膜板蒸镀在制备有第一电极120的衬底基板110上。在该过程中，需要严格控制第一功能层131和第二功能层132的蒸镀区域，以使第一功能层131和第二功能层132的膜层边缘形成第一台阶结构161，进而使后续蒸镀在衬底基板110上的第二电极140覆盖第一功能层131和第二功能层132的侧表面的部分可以呈阶梯状。
需要说明的是，使用掩膜板蒸镀第一功能层131和第二功能层132并使第一功能层131和第二功能层132的膜层边缘呈台阶结构、以及使用掩膜板蒸镀第二电极140并使第二电极140覆盖第一功能层131和第二功能层132的侧表面的部分呈阶梯状等工艺均为本领域的常规制备工艺，在此不再赘述。
需要说明的是，在实际制备显示基板10的过程中，第一电极120、第二电极140、第一功能层131和第二功能层132的膜层边缘的形状例如为圆弧形或呈斜坡状，或者根据实际工艺的需求为其他适合的形状。图1A中所示的膜层边缘的直角形状仅为示意性说明。以下各实施例中均与此基本相同，不再赘述。
例如，如图1B所示，在实际制备显示基板10的过程中，在如图1A所示的显示基板10的S1位置处，第二电极140、第二功能层132和第一功能层131的膜层边缘可以呈斜坡状。也即，第二电极140、第二功能层132和第一功能层131的边缘部分的膜层厚度是逐渐减小的。
例如，如图1A所示，显示基板10还包括辅助电极170，该辅助电极170直接设置在衬底基板110上。
图2为本公开一些实施例提供的一种显示基板的部分平面结构的示意图，例如为图1A所示的显示基板10的仰视图。
例如，结合图1A和图2所示，显示基板10包括显示区域181和围绕显示区域181的周边区域182。辅助电极170位于周边区域182中，且至少部分环绕显示区域181，例如辅助电极170可以呈环状。第一电极120和至少部分发光功能层130位于显示区域181中，第二电极140位于显示区域181和周边区域182中，且在周边区域182中第二电极140与辅助电极170直接接触以实现电连接。例如，在周边区域182中第二电极140还可以通过过孔与辅助电极170实现电连接。
例如，辅助电极170可以与衬底基板110中用于提供例如第二电极驱动电流或电压等电信号的电源信号线电连接，进而使第二电极140可以通过辅助电极170与该电源信号线电连接以接收该电信号。由于辅助电极170设置在周边区域182，因此辅助电极170的尺寸可以设置的相对较大，进而可以使第二电极140与辅助电极170之间的接触面积增大或使第二电极140与辅助电极170之间设置的过孔的尺寸增大或过孔的个数增加，从而进一步改善第二电极140的电连接性能。
例如，如图1A所示，辅助电极170可以与第一电极120同层设置且彼此绝缘，辅助电极170的材料与第一电极120的材料相同，进而可以使辅助电极170与第一电极120采用同一工艺进行制备，从而使显示基板10的制备工艺得到简化，降低显示基板10的制备成本。
需要说明的是，在本公开的其他一些实施例中，辅助电极170还可以采用与第一电极120的材料不同的其他合适的导电性材料制备，本公开的实施例对辅助电极170的材料及制备方式等不作限制。
例如，在如图1A所示的本公开的一些实施例中，第一功能层131包括 与辅助电极170及第一电极120位于同层的部分，且第一功能层131与辅助电极170之间存在间隙，该间隙中填充有第二电极140。例如，根据不同的实际需求，显示基板10还可以包括设置在第一功能层131与辅助电极170之间的其他结构或部件，本公开的实施例对此不作限制。
图3A为本公开一些实施例提供的另一种显示基板的部分截面结构的示意图，例如为显示基板的发光元件的膜层边缘处的结构示意图。例如，如图3A所示，显示基板20包括：衬底基板210、第一电极220、发光功能层230和第二电极240。第一电极220位于衬底基板210上，发光功能层230位于第一电极220远离衬底基板210的一侧，第二电极240位于发光功能层230远离第一电极220的一侧，第一电极220、发光功能层230和第二电极240构成发光元件250，且第二电极240还覆盖发光功能层230的至少一侧表面和远离衬底基板210的部分表面。
例如，如图3A所示，发光功能层230包括第一功能层231、位于第一功能层231远离衬底基板210的一侧的第二功能层232、以及位于第二功能层232远离衬底基板210的一侧的第三功能层233。第一功能层231与第二功能层232直接接触，第二功能层232与第三功能层233直接接触。第一功能层231覆盖第一电极220的至少一侧表面和衬底基板210的部分表面。第二功能层232的边缘在衬底基板210上的正投影位于第一功能层231的边缘在衬底基板210上的正投影内，且第二功能层232在衬底基板210上的正投影的面积小于第一功能层231在衬底基板210上的正投影的面积。第三功能层233的边缘在衬底基板210上的正投影位于第二功能层232的边缘在衬底基板210上的正投影内，且第三功能层233在衬底基板210上的正投影的面积小于第二功能层232在衬底基板210上的正投影的面积。由此，第一功能层231的边缘、第二功能层232的边缘和第三功能层233的边缘呈不对齐排布，以使第二电极240覆盖第一功能层231、第二功能层232和第三功能层233的侧表面的部分均具有沿衬底基板210的表面横向延伸的分量。
例如，如图3A所示，第一功能层231远离衬底基板210的表面包括被第二功能层232覆盖的部分，第一功能层231远离衬底基板210的表面的除被第二功能层232覆盖的部分以外的部分与第二电极240接触；第二功能层232远离衬底基板210的表面包括被第三功能层233覆盖的部分，第二功能 层232远离衬底基板210的表面的除被第三功能层233覆盖的部分以外的部分与第二电极240接触。由此，可以使第二电极240覆盖且接触第一功能层231、第二功能层232和第三功能层233的侧表面的部分在垂直于衬底基板210的表面的方向上的落差减小。
图3B为图3A中所示的显示基板的发光功能层的平面结构的示意图。
例如，结合图3A和图3B所示，第一功能层231在衬底基板210上的正投影的轮廓、第二功能层232在衬底基板210上的正投影的轮廓和第三功能层233在衬底基板210上的正投影的轮廓均大致相同。即，第一功能层231的轮廓、第二功能层232的轮廓和第三功能层233的轮廓均可以大致相同，例如可以为方形或其他适合的形状等。
例如，第一功能层231在衬底基板210上的正投影的中心、第二功能层232在衬底基板210上的正投影的中心和第三功能层233在衬底基板210上的正投影的中心均大致重合，进而在第一功能层231的轮廓、第二功能层232的轮廓和第三功能层233的轮廓均大致相同的情形下，使不同位置处的第一功能层231的边缘与第二功能层232的边缘之间的距离d2可以大致保持一致，且使不同位置处的第二功能层232的边缘与第三功能层233的边缘之间的距离d1可以大致保持一致。
例如，在本公开的一些实施例中，第一功能层231的边缘与第二功能层232的边缘之间的距离d2和第二功能层232的边缘与第三功能层233的边缘之间的距离d1可以相同，进而可以使第二电极240覆盖发光功能层230的侧表面的部分进一步得到优化，并且还可以使显示基板20的制备工艺及过程得到改善。
需要说明的是，在本公开的其他一些实施例中，第一功能层231的边缘与第二功能层232的边缘之间的距离d2和第二功能层232的边缘与第三功能层233的边缘之间的距离d1也可以不同，本公开的实施例对此不作限制。
需要说明的是，在本公开的实施例中，第一功能层231的边缘、第二功能层232的边缘和第三功能层233的边缘之间的具体距离可以根据显示基板20的具体结构或不同的实际需求进行设置，本公开的实施例对此不作限制。
例如，如图3A所示，第二功能层232的边缘部分与第一功能层231直接接触，第三功能层233的边缘部分与第二功能层232直接接触。即，第二 功能层232的边缘部分与第一功能层231之间不设置有任何膜层或结构，第三功能层233的边缘部分与第二功能层232之间不设置有任何膜层或结构。
例如，如图3A所示，第一功能层231远离衬底基板210的表面包括与第二功能层232接触的部分以及与第二电极240接触的部分。第一功能层231的侧表面、第一功能层231远离衬底基板210的表面的与第二电极240接触的部分、以及第二功能层232的侧表面彼此相接且在发光功能层230的至少一侧表面形成第一台阶结构261，第二电极240覆盖第一台阶结构261且与第一台阶结构261接触。第二功能层232远离衬底基板210的表面包括与第三功能层233接触的部分以及与第二电极240接触的部分。第二功能层232的侧表面、第二功能层232远离衬底基板210的表面的与第二电极240接触的部分、以及第三功能层233的侧表面彼此相接且在发光功能层230的至少一侧表面形成第二台阶结构262，第二电极240覆盖第二台阶结构262且与第二台阶结构262接触。
例如，第一台阶结构261和第二台阶结构262的形状及尺寸等可以根据第一功能层231、第二功能层232以及第三功能层233的尺寸及位置关系等进行相应地调整，本公开的实施例对此不作限制。
例如，如图3所示，第二电极240覆盖且接触第一台阶结构261与第二台阶结构262的部分在发光功能层230的至少一侧表面具有第一阶梯结构，进而使第二电极240覆盖且接触第一功能层231、第二功能层232和第三功能层233的侧表面的部分呈连续的阶梯状。由此，可以减小第二电极240覆盖第一功能层231、第二功能层232和第三功能层233的侧表面的部分在垂直于衬底基板210的表面的方向上的落差，即，减小第二电极240在发光元件250的膜层边缘处的落差，从而减弱或避免第二电极240在发光元件250的膜层边缘处发生断路现象，使第二电极240的电性连接性得到显著改善。
例如，在图3A所示的本公开的一些实施例中，第一功能层231、第二功能层232和第三功能层233可以分别为空穴注入层、空穴传输和发光层；或者，第一功能层231、第二功能层232和第三功能层233可以分别为发光层、电子传输层和电子注入层；或者，第二功能层232为发光层，第一功能层231为空穴注入层和空穴传输层中的之一，第三功能层233为电子传输层和电子注入层中的之一。本公开的实施例对此不作限制。
例如，第一电极220、第二电极240、第一功能层231、第二功能层232和第三功能层233的材料及制备工艺可以参考上述实施例中显示基板10的相应部分的描述，在此不再赘述。
例如，如图3A所示，显示基板20还包括辅助电极270。辅助电极270的结构及功能可以参考图1A所示的显示基板10中的辅助电极170，在此不再赘述。
图4为本公开一些实施例提供的再一种显示基板的部分截面结构的示意图，例如为显示基板的发光元件的膜层边缘处的结构示意图。例如，如图4所示，显示基板30包括：衬底基板310、第一电极320、发光功能层330和第二电极340。第一电极320位于衬底基板310上，发光功能层330位于第一电极320远离衬底基板310的一侧，第二电极340位于发光功能层330远离第一电极320的一侧，第一电极320、发光功能层330和第二电极340构成发光元件350，且第二电极340还覆盖发光功能层330的至少一侧表面和远离衬底基板310的部分表面。
例如，如图4所示，发光功能层330包括第一功能层331、位于第一功能层331远离衬底基板310的一侧的第二功能层332、位于第二功能层332远离衬底基板310的一侧的第三功能层333、位于第三功能层333远离衬底基板310的一侧的第四功能层334、以及位于第四功能层334远离衬底基板310的一侧的第五功能层335。第一功能层331与第二功能层332直接接触，第二功能层332与第三功能层333直接接触，第三功能层333与第四功能层334直接接触，第四功能层334与第五功能层335直接接触。
例如，第一功能层331覆盖第一电极320的至少一侧表面和衬底基板310的部分表面。第二功能层332的边缘在衬底基板310上的正投影位于第一功能层331的边缘在衬底基板310上的正投影内，且第二功能层332在衬底基板310上的正投影的面积小于第一功能层331在衬底基板310上的正投影的面积。第三功能层333的边缘在衬底基板310上的正投影位于第二功能层332的边缘在衬底基板310上的正投影内，且第三功能层333在衬底基板310上的正投影的面积小于第二功能层332在衬底基板310上的正投影的面积。第四功能层334的边缘在衬底基板310上的正投影位于第三功能层333的边缘在衬底基板310上的正投影内，且第四功能层334在衬底基板310上的正投 影的面积小于第三功能层333在衬底基板310上的正投影的面积。第五功能层335的边缘在衬底基板310上的正投影位于第四功能层334的边缘在衬底基板310上的正投影内，且第五功能层335在衬底基板310上的正投影的面积小于第四功能层334在衬底基板310上的正投影的面积。
由此，第一功能层331的边缘、第二功能层332的边缘、第三功能层333的边缘、第四功能层334的边缘和第五功能层335的边缘呈不对齐排布，以使第二电极340覆盖第一功能层331、第二功能层332、第三功能层333、第四功能层334和第五功能层335的侧表面的部分具有沿衬底基板310的表面横向延伸的分量。
例如，如图4所示，第一功能层331远离衬底基板310的表面的除被第二功能层332覆盖的部分以外的部分与第二电极340接触，第二功能层332远离衬底基板310的表面的除被第三功能层333覆盖的部分以外的部分与第二电极340接触，第三功能层333远离衬底基板310的表面的除被第四功能层334覆盖的部分以外的部分与第二电极340接触，第四功能层334远离衬底基板310的表面的除被第五功能层335覆盖的部分以外的部分与第二电极340接触。由此，可以使第二电极340覆盖且接触第一功能层331、第二功能层332、第三功能层333、第四功能层334和第五功能层335的侧表面的部分在垂直于衬底基板310的表面的方向上的落差减小。
需要说明的是，在本公开的实施例中，第一功能层331的边缘、第二功能层332的边缘、第三功能层333的边缘、第四功能层334的边缘和第五功能层335的边缘之间的具体距离可以根据显示基板30的具体结构或不同的实际需求进行设置，本公开的实施例对此不作限制。
例如，第一功能层331的边缘、第二功能层332的边缘、第三功能层333的边缘、第四功能层334的边缘和第五功能层335的边缘之间的距离设置可以参考图3A和图3B所示的显示基板20的结构，在此不再赘述。
例如，如图4所示，第二功能层332的边缘部分与第一功能层331直接接触，第三功能层333的边缘部分与第二功能层332直接接触，第四功能层334的边缘部分与第三功能层333直接接触，第五功能层335的边缘部分与第四功能层334直接接触。即，第二功能层332的边缘部分与第一功能层331之间不设置有任何膜层或结构，第三功能层333的边缘部分与第二功能层332 之间不设置有任何膜层或结构，第四功能层334的边缘部分与第三功能层333之间不设置有任何膜层或结构，第五功能层335的边缘部分与第四功能层334之间不设置有任何膜层或结构。
例如，如图4所示，第一功能层331远离衬底基板310的表面包括与第二功能层332接触的部分以及与第二电极340接触的部分。第一功能层331的侧表面、第一功能层331远离衬底基板310的表面的与第二电极340接触的部分、以及第二功能层332的侧表面彼此相接且在发光功能层330的至少一侧表面形成第一台阶结构361，第二电极340覆盖第一台阶结构361且与第一台阶结构361接触。第二功能层332远离衬底基板310的表面包括与第三功能层333接触的部分以及与第二电极340接触的部分。第二功能层332的侧表面、第二功能层332远离衬底基板310的表面的与第二电极340接触的部分、以及第三功能层333的侧表面彼此相接且在发光功能层330的至少一侧表面形成第二台阶结构362，第二电极340覆盖第二台阶结构362且与第二台阶结构362接触。第三功能层333远离衬底基板310的表面包括与第四功能层334接触的部分以及与第二电极340接触的部分。第三功能层333的侧表面、第三功能层333远离衬底基板310的表面的与第二电极340接触的部分、以及第四功能层334的侧表面彼此相接且在发光功能层330的至少一侧表面形成第三台阶结构363，第二电极340覆盖第三台阶结构363且与第三台阶结构363接触。第四功能层334远离衬底基板310的表面包括与第五功能层335接触的部分以及与第二电极340接触的部分。第四功能层334的侧表面、第四功能层334远离衬底基板310的表面的与第二电极340接触的部分、以及第五功能层335的侧表面彼此相接且在发光功能层330的至少一侧表面形成第四台阶结构364，第二电极340覆盖第四台阶结构364且与第四台阶结构364接触。
例如，第一台阶结构361、第二台阶结构362、第三台阶结构363和第四台阶结构364的形状及尺寸等可以根据第一功能层331、第二功能层332、第三功能层333、第四功能层334以及第五功能层335的尺寸及位置关系等进行相应地调整，本公开的实施例对此不作限制。
例如，如图4所示，第二电极340覆盖且接触第一台阶结构361与第二台阶结构362的部分在发光功能层330的至少一侧表面具有第一阶梯结构。 第二电极340覆盖且接触第二台阶结构362与第三台阶结构363的部分在发光功能层330的至少一侧表面具有第二阶梯结构。第二电极340覆盖且接触第三台阶结构363与第四台阶结构364的部分在发光功能层330的至少一侧表面具有第三阶梯结构。由此，第二电极340覆盖第一功能层331、第二功能层332、第三功能层333、第四功能层334和第五功能层335的侧表面的部分呈连续的阶梯状，进而可以减小第二电极340覆盖第一功能层331、第二功能层332、第三功能层333、第四功能层334和第五功能层335的侧表面的部分在垂直于衬底基板310的表面的方向上的落差，即，减小第二电极340在发光元件350的膜层边缘处的落差，从而减弱或避免第二电极340在发光元件350的膜层边缘处发生断路现象，使第二电极340的电性连接性得到显著改善。
例如，在图4所示的本公开的一些实施例中，第一功能层331为空穴注入层，第二功能层332为空穴传输层，第三功能层333为发光层，第四功能层334为电子传输层，第五功能层335为电子注入层。
例如，第一电极320、第二电极340、第一功能层331、第二功能层332、第三功能层333、第四功能层334和第五功能层335的材料及制备工艺可以参考上述实施例中显示基板10的相应部分的描述，在此不再赘述。
例如，如图4所示，显示基板30还包括辅助电极370。辅助电极370的结构及功能可以参考图1A所示的显示基板10中的辅助电极170或图3A所示的显示基板20中的辅助电极270，在此不再赘述。
需要说明的是，在本公开的其他一些实施例中，显示基板的发光功能层还可以包括四个、六个或更多个功能层，本公开的实施例对此不作限制。功能层的结构、设置方式及功能等可以参考上述实施例中显示基板10、显示基板20以及显示基板30的相应描述，在此不再赘述。
例如，在上述本公开实施例提供的显示基板10、显示基板20和显示基板30中，发光功能层中所有功能层的边缘均为不对齐排布，进而以使相邻的功能层的边缘均可以形成台阶结构，从而使第二电极覆盖发光功能层的侧表面的部分在垂直于衬底基板的表面的方向上的落差可以尽可能地减小。
而在本公开的其他一些实施例中，一个台阶结构也可以由三个或更多个功能层形成，也就是说，一个台阶结构中也可以包括边缘呈对齐排布的相邻 的功能层。例如，该台阶结构在垂直于衬底基板的表面的方向上的落差需要不大于显示基板中任一功能层在垂直于衬底基板的表面的方向上的高度，例如该台阶结构在垂直于衬底基板的表面的方向上的落差范围可以为不高于90纳米，例如可以进一步为10-80纳米。例如，在该台阶结构在垂直于衬底基板的表面的方向上的落差高于上述范围的情形，第二电极覆盖发光功能层的侧表面的部分在垂直于衬底基板的表面的方向上仍会出现比较大的落差，进而难以有效地避免第二电极在发光元件的膜层边缘处发生断路现象；而在该台阶结构在垂直于衬底基板的表面的方向上的落差低于上述范围的情形，会使显示基板的制备难度增加，进而可能会对显示基板的良率造成影响。
例如，在本公开的一些实施例中，在辅助电极与发光功能层之间不需要设置其他结构或部件的情形，辅助电极例如可以与第一功能层的侧表面接触，进而可以减小显示基板的周边区域的尺寸，有利于包括该显示基板的显示面板或显示装置实现窄边框的设计。
下面在图4所示的显示基板30的基础上，对辅助电极与第一功能层的侧表面接触的情形进行说明。
图5为本公开一些实施例提供的再一种显示基板的部分截面结构的示意图，例如为显示基板的发光元件的膜层边缘处的结构示意图。需要说明的是，图5所示的显示基板40中，除辅助电极470与第一功能层431的位置关系外，显示基板40的其他结构均与图4所示的显示基板30中的基本相同，在此不再赘述。
例如，如图5所示，辅助电极470与第一功能层431的侧表面接触，第一台阶结构461可以为第一功能层431远离衬底基板410的表面的与第二电极440接触的部分、以及第二功能层432的侧表面。进而，在使第二电极440在发光元件450的膜层边缘处的落差减小的情形下，还可以减小显示基板40的周边区域的尺寸，从而有利于包括显示基板40的显示面板或显示装置实现窄边框的设计。
例如，在本公开的一些实施例中，显示基板可以为有机发光二极管显示基板或者量子点发光二极管显示基板。例如，上述实施例中的显示基板10、显示基板20、显示基板30和显示基板40均可以为有机发光二极管显示基板或者量子点发光二极管显示基板。或者，显示基板10、显示基板20、显示基 板30和显示基板40还可以为其他类型的具有显示功能的基板，本公开的实施例对此不作限制。
例如，在本公开的一些实施例中，显示基板的衬底基板为硅基板，且硅基板包括像素驱动电路。像素驱动电路被配置为与第一电极电连接并向第一电极提供第一电极驱动电流。
例如，在本公开的一些实施例中，显示基板的周边区域包括连接电极区和传感器区，连接电极区至少部分环绕传感器区，传感器区至少部分环绕显示区域。辅助电极位于连接电极区中，传感器区在衬底基板上的正投影位于发光功能层中的任一功能层在衬底基板上的正投影内。
例如，在本公开的一些实施例中，周边区域还包括第一虚设子区和第二虚设子区，连接电极区至少部分环绕第一虚设子区，第一虚设子区至少部分环绕传感器区；传感器区至少部分环绕第二虚设子区，第二虚设子区至少部分环绕显示区域。发光功能层位于显示区域、第二虚设子区、传感器区和第一虚设子区中。
图6A为本公开一些实施例提供的再一种显示基板的部分截面结构的示意图，图6B为本公开一些实施例提供的一种显示基板的区域划分示意图。
下面结合图6A和图6B所示的显示基板60，对显示基板60的区域划分及区域中的结构进行说明。
例如，除了显示基板60的结构表示的更为详细以及示出了周边区域682中的区域划分外，图6A中的显示基板60的发光元件的膜层边缘处的结构，例如图6A中所示的第二电极640及发光功能层630的结构，可以与上述实施例中的显示基板10(或显示基板20、显示基板30)基本相同。当然，图6A所示的显示基板60也可以与上述实施例中的各显示基板不同，只要能实现相应功能即可。
需要理解的是，为了描述简洁而未在图6A中示出显示基板60的发光功能层630的详细结构。显示基板60的发光功能层630的具体结构可以参考图1A所示的显示基板10的发光功能层130(或图3A所示的显示基板20的发光功能层230、图4所示的显示基板30的发光功能层330)的具体结构，在此不再赘述。
例如，如图6B所示，显示基板60包括显示区域681和周边区域682， 周边区域682包括三个区域：连接电极区683、第一虚设区684和第二虚设区685。第一虚设区684位于连接电极区683和显示区域681之间，第二虚设区685位于连接电极区683的远离显示区域681的一侧，也即，第二虚设区685位于连接电极区683的远离第一虚设区684的一侧。
例如，如图6A所示，该显示基板60包括：第一电极图案103，位于显示基板60的显示区域681，并包括彼此间隔的多个第一电极1030(例如，阳极)；连接电极图案103a，位于显示基板60的连接电极区683，并包括多个连接电极103a0(即辅助电极)；以及第一虚设电极图案de1，位于显示基板60的第一虚设区684，并包括多个第一虚设电极de10。
例如，如图6A和6B所示，连接电极区683围绕显示区域681，第一虚设区684位于连接电极区683和显示区域681之间。连接电极图案103a围绕第一电极图案103，第一虚设电极图案de1围绕第一电极图案103。第一虚设电极图案de1位于连接电极图案103a和第一电极图案103之间。
例如，如图6A所示，显示基板60还包括第二电极640(例如，阴极)，第二电极640与连接电极103a0相连。显示基板60的周边区域682围绕显示区域681，周边区域682包括连接电极区683和第一虚设区684。第二电极640位于显示区域681和周边区域682中，第二电极640与第一电极图案103彼此间隔。
例如，在显示基板60的连接电极区683，彩膜层在衬底基板101上的正投影(未示出)完全覆盖多个连接电极103a0在衬底基板101上的投影。
例如，第一电极图案103和第二电极640在衬底基板101上的正投影位于彩膜层(未示出)在衬底基板101上的正投影内。
例如，发光功能层630在衬底基板101上的正投影位于彩膜层(未示出)在衬底基板101上的正投影内。
例如，第一电极图案103的图案密度、连接电极图案103a的图案密度和第一虚设电极图案de1的图案密度相同，且第一电极图案103的第一电极1030的形状、连接电极图案103a的连接电极103a0形状和第一虚设电极图案de1的第一虚设电极de10的形状均相同，这样可以便于使得刻蚀或显影时各个区域刻蚀液或显影液消耗的速率大致相当，以确保工艺的均匀性。
例如，如图6A所示，周边区域681还包括传感器区R1，连接电极区683 至少部分环绕传感器区R1，传感器区R1至少部分环绕显示区域681。传感器区R1在衬底基板101上的正投影位于发光功能层630中的任一功能层在衬底基板101上的正投影内。
例如，如图6A所示，显示基板60还包括传感器电极图案103b，传感器电极图案103b位于显示基板60的传感器区R1，并包括多个传感器电极103b0。例如，传感器电极图案103b的图案密度和第一电极图案103的图案密度相同，传感器电极103b0的图案形状和第一电极图案103的图案形状相同。
例如，如图6A所示，周边区域681的第一虚设区684还包括第一虚设子区1211和第二虚设子区1212。连接电极区683至少部分环绕第一虚设子区1211，第一虚设子区1211至少部分环绕传感器区R1；传感器区R1至少部分环绕第二虚设子区1212，第二虚设子区1212至少部分环绕显示区域681。发光功能层630位于显示区域681、第二虚设子区1212、传感器区R1和第一虚设子区1211中。
需要说明的是，传感器区R1的像素结构和显示区域681的像素结构相同，在传感器区R1中传感器电极103b0通过钨过孔V3以及过孔V31和像素驱动电路电连接。传感器区R1的像素结构与第一虚设子区1211、第二虚设子区1212和第二虚设区685的像素结构均不同，第一虚设子区1211的第一虚设电极图案de1、第二虚设子区1212的第一虚设电极de10和第二虚设区685的第二虚设电极图案de2不通过过孔连接其他电路。
例如，传感器区R1的像素结构用来感测显示区域681的第一电极1030的电压，并用于实现电路补偿，例如，可以通过一个补偿晶体管连接到一个温度传感器进行对显示区域681的第一电极1030的电压进行感测。
例如，如图6A所示，第一虚设区684中的第二虚设子区1212用于隔离开传感器区R1和显示区域681。第一虚设区684中的第一虚设子区1211用于过渡，使得第二电极640和连接电极区683中的连接电极103a0更好地搭接。
例如，如图6A所示，显示基板60还包括第二虚设电极图案de2，位于显示基板60的第二虚设区685，并包括多个第二虚设电极de20；第二虚设区685位于连接电极区683的远离显示区域681的一侧。例如，第二虚设电极 图案de2的图案密度和第一电极图案103的图案密度相同，且第二虚设电极图案de2和第一电极图案103通过像素界定层间隔开。
例如，第一虚设区684的第一虚设子区1211和第二虚设区685中的虚拟像素均为两排。例如，在行方向的边为两行，在列方向的边为两列。
例如，如图6A所示，第二虚设子区1212位于传感器区R1和显示区域681之间；第一虚设区684的位于传感器区R1和连接电极区683之间的部分为第一虚设子区1211；在第一虚设子区1211形成第一填充层104a，第一填充层104a包括多个第一虚设电极de10和绝缘包裹层104c，第一电极图案103包括与连接电极103a0相邻的边缘第一电极103e，绝缘包裹层104c分别与连接电极103a0和边缘第一电极103e接触，例如，该绝缘包裹层104c和像素界定层的材料相同。
例如，如图6A所示，第二电极640与绝缘包裹层104c接触。
例如，如图6A所示，在第二电极640远离衬底基板101的一侧还设置有第一薄膜封装层107，该第一薄膜封装层107可以起到防止水氧进入发光功能层630中的作用。
例如，如图6A所示，边缘第一电极103e与多个第一虚设电极de10彼此绝缘。
例如，如图6A所示，显示基板60还包括像素定义层104，像素定义层104包括多个像素定义部1040，多个像素定义部1040中的每个位于相邻的第一电极1030之间。
例如，如图6A所示，绝缘包裹层104c与像素定义层104位于同一层，可由同一膜层采用同一构图工艺形成，以节省制作工艺。
例如，如图6A所示，第一电极图案103与连接电极图案103a位于同一层，可由同一膜层采用同一构图工艺形成，以节省制作工艺。
例如，如图6A所示，显示基板60还包括第二填充层104b，第二填充层104b包括至少一个第二填充部104b0，第二填充部104b0位于相邻连接电极103a0之间。例如，第二填充层104b为绝缘层。例如，如图6A所示，第二填充部104b0分别与相邻连接电极103a0接触。
例如，如图6A所示，第二填充层104b和第一填充层104a位于同一层，可由同一膜层采用同一构图工艺形成，以节省制作工艺。
例如，如图6A所示，显示基板60还包括第三填充层1043，第三填充层1043包括多个第三填充部10430，第三填充部10430位于相邻传感器电极103b0、相邻的传感器电极103b0和第一虚设电极中至少之一之间。图6A以第三填充部10430位于相邻传感器电极103b0之间为例进行说明。
例如，如图6A所示，第三填充层1043与像素定义层104位于同一层，可由同一膜层采用同一构图工艺形成，以节省制作工艺。
例如，如图6A所示，显示基板60还包括发光功能层630，发光功能层630位于第一电极图案103和第二电极640之间，发光功能层630与第一填充层104a接触。例如，发光功能层630与部分第一填充层104a接触。例如，在显示区域681，彩膜层(未示出)覆盖发光功能层630。
例如，如图6A所示，发光功能层630与传感器电极图案103b接触。发光功能层630与位于第二虚设子区1212内的第一虚设电极接触。
例如，如图6A所示，在衬底基板101上还设有绝缘层IS，绝缘层IS上设有导电图案109，导电图案109包括第一导电部1091、第二导电部1092和第三导电部1093。绝缘层IS包括过孔V11、过孔V21、过孔V31。过孔V11、过孔V21、过孔V31中分别填充导电材料以形成连接件。第一电极1030通过第一导电部1091与过孔V21中的连接件相连。连接电极103a0通过第二导电部1092与过孔V11中的连接件相连。传感器电极103b0通过第三导电部1093与过孔V31中的连接件相连。
例如，第一绝缘层102的在垂直于衬底基板101的方向上与多个第一虚设电极de10交叠的部分不设置过孔。
例如，第一绝缘层102的在垂直于衬底基板101的方向上与多个第二虚设电极de20交叠的部分不设置过孔。
例如，第一绝缘层102的在垂直于衬底基板101的方向上与多个连接电极103a0交叠的部分设置过孔V1。
例如，第一绝缘层102的在垂直于衬底基板101的方向上与多个第一电极1030交叠的部分设置过孔V2。
例如，第一绝缘层102的在垂直于衬底基板101的方向上与多个传感器电极103b0交叠的部分设置过孔V3。
图7为本公开一些实施例提供的再一种显示基板的部分截面结构的示意 图，例如可以为对应于图1A所示的显示基板10(或图3A所示的显示基板20、图4所示的显示基板30、图5所示的显示基板40、图6A所示的显示基板60)的显示区域中的部分截面结构的示意图。除了显示基板50的结构表示的更为详细以及示出了显示区域中的多个子像素外，图7中显示基板50的发光元件的膜层边缘处的结构可以与上述实施例中的显示基板10(或显示基板20、显示基板30、显示基板40)基本相同。需要理解的是，图7所示的显示基板50可以与上述实施例中的显示基板10(或显示基板20、显示基板30、显示基板40、显示基板60)完全相同或基本相同，例如，为了描述简洁而未在图1A中示出显示基板10的显示区域的详细结构。当然，图7所示的显示基板50也可以与上述实施例中的各显示基板不同，只要能实现相应功能即可。需要理解的是，图1A所示的显示基板10(以及图3A所示的显示基板20、图4所示的显示基板30、图5所示的显示基板40、图6A所示的显示基板60)也包括多个子像素，为了描述简洁而未在图1A(以及图3A、图4-图6A)中示出具体的子像素结构。
在该实施例中，如图7所示，显示基板50包括衬底基板510和发光元件550(即显示器件)，衬底基板510为硅基板。例如，硅基板510包括依次层叠设置的硅基衬底基板511、像素驱动电路512、光反射层513和绝缘层514。发光元件550包括依次层叠设置在绝缘层514上的第一电极520(例如阳极)、发光功能层530和第二电极540(例如阴极)。第一电极520为透明电极层。例如，绝缘层514为透光的以使由发光功能层530发出的光从中穿透并且到达光反射层513以被光反射层513反射。
例如，绝缘层514包括填充有金属构件515的过孔516，光反射层513通过金属构件515与第一电极520电连接。这样，通过在绝缘层514中形成光反射层513和第一电极520之间的导电通道，有利于将硅基板510中像素驱动电路512提供的电信号(例如，第一电极驱动电流)通过光反射层513传输到第一电极520。通过这种方式，不仅有利于实现像素驱动电路512对发光元件550的控制，而且使显示基板50的结构更紧凑，有利于器件的微型化。进一步地，例如，金属构件515由金属材料制成，例如钨金属，由钨金属填充的过孔也称为钨过孔(W-via)。例如，在绝缘层514厚度较大的情况下，在绝缘层514中形成钨过孔可以保证导电通路的稳定性，而且，由于制 作钨过孔的工艺成熟，所得到的绝缘层514的表面平坦度好，有利于降低绝缘层514与第一电极520之间的接触电阻。可以理解的是，钨过孔不仅适于实现绝缘层514与第一电极520之间的电连接，还适于光反射层513与像素驱动电路512之间的电连接，以及其他布线层，例如像素电路中驱动晶体管、开关晶体管和电容的各个电极及信号线所在的层之间的电连接。
例如，硅基板510包括像素驱动电路512，像素驱动电路512与光反射层513彼此电连接，像素驱动电路512用于驱动发光元件550发光。像素驱动电路512至少包括驱动晶体管M0和开关晶体管(图中未示出)，驱动晶体管M0与光反射层513之间彼此电连接。由此，驱动发光元件550的电信号可通过光反射层513传输到第一电极520，从而控制发光元件550发光。
例如，驱动晶体管M0包括栅电极G、源电极S和漏电极D。驱动晶体管M0的源电极S电连接于光反射层513。在驱动晶体管M0处于开启状态时，由电源线提供的电信号可经过驱动晶体管M0的源电极S和光反射层513传输到第一电极520。由于第一电极520与第二电极540之间形成电压差，在二者之间形成电场，发光功能层530在该电场作用下发光。可以理解的是，驱动晶体管M0中，源电极S和漏电极D的位置可互换，因此，源电极S和漏电极D之一与光反射层513彼此电连接即可。
例如，显示基板50包括多个子像素(或像素单元)，图7中示例性地示出了三个子像素，即红色子像素SP1、绿色子像素SP2和蓝色子像素SP3。每个子像素对应显示基板50的一个子像素区。也即是，每个子像素中设置有独立的发光元件550和驱动晶体管M0。
例如，三个子像素中的绝缘层514为一体形成以方便制作。例如，如图7所示，绝缘层514还包括暴露焊盘517的开口518，开口518的设置有利于焊盘517与外界电路之间的电连接和信号连通。例如，该暴露焊盘517的开口518位于显示基板50的周边区域582，例如可以位于显示基板50的辅助电极和显示区域581之间。该显示基板50中子像素的颜色仅为示意性的，还可以包括诸如黄色、白色等其他颜色。
例如，如图7所示，显示基板50还包括依次设置在第二电极540上的第二薄膜封装层16、彩膜层17和第一薄膜封装层18。该显示基板50还包括盖板19，盖板19设置在第一薄膜封装层18上。例如，第二薄膜封装层16位 于第二电极540远离硅基衬底基板511的一侧。彩膜层17位于第二薄膜封装层16远离硅基衬底基板511的一侧，并且包括红色滤光单元R、绿色滤光单元G和蓝色滤光单元B。第一薄膜封装层18和盖板19位于彩膜层17远离硅基衬底基板511的一侧。对于第一薄膜封装层18、彩膜层17、第二薄膜封装层16和盖板19的具体材料可采用本领域的常规材料，在此不再详述。
例如，在本公开实施例提供的显示基板50中，发光功能层530在硅基板510上的正投影位于彩膜层17在硅基板510上的正投影内。
例如，在本公开实施例提供的显示基板50中，包括第一电极520、发光功能层530和第二电极540的发光元件550、第一薄膜封装层18、彩膜层17、第二薄膜封装层16和盖板19均在面板厂制作完成。另外，焊盘517上方的绝缘层514也在面板厂完成刻蚀，从而露出焊盘517，并使其与柔性印刷电路板(FPC)绑定或者布线(Wire)绑定。因此，在本公开的实施例中，可以由晶圆厂制作出包括光反射层513和绝缘层514且适于形成发光元件550的硅基板510，不仅降低了光反射层513的制造难度，也有利于面板厂的后续工艺制程。
图8为本公开一些实施例提供的一种显示基板的电路原理示意图。例如，该电路结构包括位于图7所示的显示基板50的显示区域581(AA区)中的多个发光元件550(即图8中所示的发光元件L)以及与各发光元件L一一对应耦接的像素驱动电路512，像素驱动电路512包括驱动晶体管。并且，该电路结构还可以包括位于显示基板的显示区域581之外的非显示区域(即显示基板的边缘区域)中的多个电压控制电路620。例如，一行中至少两个像素驱动电路512共用一个电压控制电路620，且一行像素驱动电路512中驱动晶体管的第一极与共用的电压控制电路620耦接，各驱动晶体管的第二极与对应的发光元件L耦接。电压控制电路620被配置为响应于复位控制信号RE，将初始化信号Vinit输出至驱动晶体管的第一极，控制对应的发光元件L复位；以及响应于发光控制信号EM，将第一电源信号VDD输出至驱动晶体管的第一极，以驱动发光元件L发光。通过共用电压控制电路620，可以简化显示区域中各像素驱动电路的结构，降低显示区域中像素驱动电路的占用面积，从而可以使显示区域设置更多的像素驱动电路和发光元件，进而使包括该显示基板的显示面板或显示装置实现高PPI的有机发光显示面 板。并且，电压控制电路620在复位控制信号RE的控制下将初始化信号Vinit输出至驱动晶体管的第一极，控制对应的发光元件复位，从而可以避免上一帧发光时加载于发光元件上的电压对下一帧发光的影响，进而改善残影现象。
例如，该显示基板还可以包括位于显示区域581内的多个像素单元PX，每个像素单元PX包括多个子像素；各子像素分别包括一个发光元件L与一个像素驱动电路512。进一步地，像素单元PX可以包括3个不同颜色的子像素。这3个子像素可以分别为红色子像素、绿色子像素以及蓝色子像素。当然，像素单元PX也可以包括4个、5个或更多的子像素，这需要根据实际应用环境来设计确定，在此不作限定。
例如，可以使同一行中相邻的至少两个子像素中的像素驱动电路512共用一个电压控制电路620。例如，在一些示例中，如图8所示，可以使同一行中的所有像素驱动电路512共用一个电压控制电路620。或者，在其他示例中，也可以使同一行中相邻的两个、三个或更多子像素中的像素驱动电路512共用一个电压控制电路620，在此不作限定。这样，通过共用电压控制电路可以降低显示区域中像素驱动电路的占用面积。
图9为本公开一些实施例提供的一种显示基板的电压控制电路和像素驱动电路的具体实现示例的电路图。例如，像素驱动电路512中的驱动晶体管M0可以为N型晶体管。并且，发光元件L可以包括OLED。这样，OLED的正极与驱动晶体管M0的第二端D电连接，OLED的负极与第二电源端VSS电连接。第二电源端VSS的电压一般为负电压或接地电压VGND(一般为0V)，初始化信号Vinit的电压也可以设置为接地电压VGND，在此不作限定。例如，可以将OLED设置为Micro-OLED或Mini-OLED，这样进一步有利于使包括该显示基板的显示面板或显示装置实现高PPI的有机发光显示面板。
例如，以一行中包括的两个像素驱动电路512为例，电压控制电路620可以包括第一开关晶体管M1和第二开关晶体管M2。第一开关晶体管M1的栅极用于接收复位控制信号RE，第一开关晶体管M1的第一极用于接收初始化信号Vinit，第一开关晶体管M1的第二极与对应的驱动晶体管M0的第一极S耦接。第二开关晶体管M2的栅极用于接收发光控制信号EM，第二开关晶体管M2的第一极用于接收第一电源信号VDD，第二开关晶体管M2 的第二极与对应的驱动晶体管M0的第一极S耦接。
例如，可以使第一开关晶体管M1与第二开关晶体管M2的类型不同。例如，第一开关晶体管M1为N型晶体管，第二开关晶体管M2为P型晶体管。或者，第一开关晶体管M1为P型晶体管，第二开关晶体管M2为N型晶体管。当然，也可以使第一开关晶体管M1与第二开关晶体管M2的类型相同。在实际应用中，需要根据实际应用环境来设计第一开关晶体管M1与第二开关晶体管M2的类型，在此不作限定。
例如，像素驱动电路512还可以包括第三开关晶体管M3和存储电容Cst。例如，第三开关晶体管M3的栅极用于接收第一栅极扫描信号S1，第三开关晶体管M3的第一极用于接收数据信号DA，第三开关晶体管M3的第二极与驱动晶体管M0的栅极G耦接。存储电容Cst的第一端与驱动晶体管M0的栅极G耦接，存储电容Cst的第二端与接地端GND耦接。
例如，像素驱动电路512还可以包括第四开关晶体管M4。例如，第四开关晶体管M4的栅极用于接收第二栅极扫描信号S2，第四开关晶体管M4的第一极用于接收数据信号DA，第四开关晶体管M4的第二极与驱动晶体管M0的栅极G耦接。并且，第四开关晶体管M4与第三开关晶体管M3的类型不同。例如，第三开关晶体管M3为N型晶体管，第四开关晶体管M4为P型晶体管；或者，第三开关晶体管M3为P型晶体管，第四开关晶体管M4为N型晶体管。
需要说明的是，在数据信号DA的电压为高灰阶对应的电压时，通过例如P型的第四开关晶体管M4导通以将数据信号DA传输给驱动晶体管M0的栅极G，可以避免数据信号DA的电压受例如N型的第三开关晶体管M3的阈值电压的影响。在数据信号DA的电压为低灰阶对应的电压时，通过例如N型的第三开关晶体管M3导通以将数据信号DA传输给驱动晶体管M0的栅极G，可以避免数据信号DA的电压受例如P型的第四开关晶体管M4的阈值电压的影响。这样可以提高输入到驱动晶体管M0的栅极G上的电压范围。
上述驱动晶体管M0、第一开关晶体管M1、第二开关晶体管M2、第三开关晶体管M3、第四开关晶体管M4均为制备在硅基板中的MOS晶体管。
需要说明的是，为表示清楚、简洁，本公开的实施例并没有给出显示基 板的全部组成单元。为实现本公开实施例提供的显示基板的基本功能，本领域技术人员可以根据具体需要提供、设置其他未示出的结构，本公开的实施例对此不作限制。
本公开至少一个实施例还提供一种显示面板，包括本公开任一实施例所述的显示基板，例如可以包括图1A中所示的显示基板10、图3A中所示的显示基板20、图4中所示的显示基板30、图5中所示的显示基板40、图6A中所示的显示基板60或图7中所示的显示基板50。
例如，本公开实施例提供的显示面板可以是虚拟现实设备或者增强现实设备。
例如，本公开实施例提供的显示面板可以是硅基OLED显示面板或硅基QLED显示面板，本公开的实施例对此不作限制。
例如，在本公开的其他一些实施例中，显示面板还可以为电子纸显示面板或其他类型的具有显示功能的面板，本公开的实施例对此不作限制。
例如，显示面板可以为电子纸、手机、平板电脑、电视机、显示器、笔记本电脑、数码相框、导航仪等任何具有显示功能的产品或部件，本公开的实施例对此不作限制。
关于本公开实施例提供的显示面板的技术效果可以参考本公开实施例提供的显示基板的技术效果，在此不再赘述。
本公开至少一个实施例还提供一种显示基板的制备方法，包括：提供衬底基板；在衬底基板上形成第一电极；在第一电极上形成发光功能层；以及在发光功能层上形成第二电极。第二电极覆盖发光功能层的至少一侧表面和远离衬底基板的部分表面。第一电极、发光功能层和第二电极构成发光元件，发光功能层包括第一功能层和位于第一功能层远离衬底基板的一侧的第二功能层，发光功能层的至少一侧表面的形状被形成为使得第二电极覆盖发光功能层的至少一侧表面的部分具有沿衬底基板的表面横向延伸的分量。
本公开至少一个实施例还提供一种显示基板的制备方法，包括：提供衬底基板；在衬底基板上形成第一电极；在第一电极上形成发光功能层；以及在发光功能层上形成第二电极。第一电极、发光功能层和第二电极构成发光元件，发光功能层包括第一功能层和位于第一功能层远离衬底基板的一侧的第二功能层，第二功能层的边缘在衬底基板上的正投影位于第一功能层的边 缘在衬底基板上的正投影内，且第二功能层在衬底基板上的正投影的面积小于第一功能层在衬底基板上的正投影的面积；第二电极覆盖发光功能层的至少一侧表面和远离衬底基板的部分表面，且与发光功能层的至少一侧表面和远离衬底基板的部分表面接触。
图10为本公开一些实施例提供的一种显示基板的制备方法的流程图。例如，该显示基板的制备方法包括以下步骤。
步骤S10：提供衬底基板。
步骤S20：在衬底基板上形成第一电极。
步骤S30：在第一电极上形成发光功能层。
步骤S40：在发光功能层上形成第二电极。第二电极覆盖发光功能层的至少一侧表面和远离衬底基板的部分表面。
例如，通过本公开实施例提供的制备方法，可以使制备的显示基板中的第二电极覆盖发光功能层的侧表面的部分具有沿衬底基板的表面横向延伸的分量，例如使第二电极覆盖发光功能层的侧表面的部分沿发光功能层的侧表面呈阶梯状或斜坡状，从而使第二电极覆盖发光功能层的至少一侧表面的部分在垂直于衬底基板的表面的方向上的落差减小，即，使第二电极在发光元件的膜层边缘处的落差减小。由此，可以减弱或避免制备的显示基板中的第二电极在发光元件的膜层边缘处发生断路现象，使第二电极的电性连接性得到显著改善，进而提升制备的显示基板的整体性能和使用寿命，且进一步提升包括该制备的显示基板的显示面板或显示装置的整体性能和使用寿命。
例如，在本公开的一些实施例提供的制备方法中，第一功能层远离衬底基板的表面包括被第二功能层覆盖的部分，第一功能层远离衬底基板的表面的除被第二功能层覆盖的部分以外的部分与第二电极接触。
例如，在本公开的一些实施例提供的制备方法中，第二电极覆盖发光功能层的至少一侧表面的部分具有沿衬底基板的表面横向延伸的分量。
例如，在本公开的一些实施例提供的制备方法中，第一功能层与第二功能层接触，第一功能层远离衬底基板的表面包括与第二功能层接触的部分以及与第二电极接触的部分；第一功能层的侧表面、第一功能层远离衬底基板的表面的与第二电极接触的部分、以及第二功能层的侧表面彼此相接且在至少一侧表面形成第一台阶结构，第二电极覆盖第一台阶结构且与第一台阶结 构接触。
例如，本公开的一些实施例提供的制备方法还包括：在第二功能层远离衬底基板的一侧形成第三功能层。第三功能层的边缘在衬底基板上的正投影位于第二功能层的边缘在衬底基板上的正投影内，且第三功能层在衬底基板上的正投影的面积小于第二功能层在衬底基板上的正投影的面积。
例如，在本公开的一些实施例提供的制备方法中，第二功能层与第三功能层接触，第二功能层远离衬底基板的表面包括与第三功能层接触的部分以及与第二电极接触的部分；第二功能层的侧表面、第二功能层远离衬底基板的表面的与第二电极接触的部分、以及第三功能层的侧表面彼此相接且在至少一侧表面形成第二台阶结构，第二电极覆盖第二台阶结构且与第二台阶结构接触。
例如，在本公开的一些实施例提供的制备方法中，第二电极覆盖第一台阶结构和第二台阶结构的部分在发光功能层的至少一侧表面具有第一阶梯结构。
关于本公开实施例提供的显示基板的制备方法的技术效果可以参考本公开实施例提供的显示基板的技术效果，在此不再赘述。
有以下几点需要说明：
(1)本公开实施例附图只涉及到与本公开实施例涉及到的结构，其他结构可参考通常设计。
(2)为了清晰起见，在用于描述本公开的实施例的附图中，层或区域的厚度被放大或缩小，即这些附图并非按照实际的比例绘制。可以理解，当诸如层、膜、区域或基板之类的元件被称作位于另一元件“上”或“下”时，则该元件可以“直接”位于另一元件“上”或“下”，或者可以存在中间元件。
(3)在不冲突的情况下，本公开的实施例及实施例中的特征可以相互组合以得到新的实施例。
以上所述，仅为本公开的具体实施方式，但本公开的保护范围并不局限于此，任何熟悉本技术领域的技术人员在本公开揭露的技术范围内，可轻易想到变化或替换，都应涵盖在本公开的保护范围之内。因此，本公开的保护范围应以权利要求的保护范围为准。

Claims (32)

  1. 一种显示基板，包括：衬底基板、第一电极、发光功能层和第二电极，
    其中，所述第一电极位于所述衬底基板上，所述发光功能层位于所述第一电极远离所述衬底基板的一侧，所述第二电极位于所述发光功能层远离所述第一电极的一侧，所述第一电极、所述发光功能层和所述第二电极构成发光元件；
    所述发光功能层包括第一功能层和位于所述第一功能层远离所述衬底基板的一侧的第二功能层，所述第二功能层的边缘在所述衬底基板上的正投影位于所述第一功能层的边缘在所述衬底基板上的正投影内，且所述第二功能层在所述衬底基板上的正投影的面积小于所述第一功能层在所述衬底基板上的正投影的面积；
    所述第二电极覆盖所述发光功能层的至少一侧表面和远离所述衬底基板的部分表面，且与所述发光功能层的至少一侧表面和远离所述衬底基板的部分表面接触。
  2. 根据权利要求1所述的显示基板，其中，所述第一功能层远离所述衬底基板的表面包括被所述第二功能层覆盖的部分，
    所述第一功能层远离所述衬底基板的表面的除所述被所述第二功能层覆盖的部分以外的部分与所述第二电极接触。
  3. 根据权利要求2所述的显示基板，其中，所述第一功能层在所述衬底基板上的正投影的轮廓与所述第二功能层在所述衬底基板上的正投影的轮廓大致相同。
  4. 根据权利要求2或3所述的显示基板，其中，所述第一功能层在所述衬底基板上的正投影的中心与所述第二功能层在所述衬底基板上的正投影的中心大致重合。
  5. 根据权利要求2-4任一所述的显示基板，其中，所述第二电极覆盖所述发光功能层的至少一侧表面的部分具有沿所述衬底基板的表面横向延伸的分量。
  6. 根据权利要求2-5任一所述的显示基板，其中，所述第一功能层与所述第二功能层接触，
    所述第一功能层远离所述衬底基板的表面包括与所述第二功能层接触的部分以及与所述第二电极接触的部分；
    所述第一功能层的侧表面、所述第一功能层远离所述衬底基板的表面的与所述第二电极接触的部分、以及所述第二功能层的侧表面彼此相接且在所述至少一侧表面形成第一台阶结构，所述第二电极覆盖所述第一台阶结构且与所述第一台阶结构接触。
  7. 根据权利要求6所述的显示基板，其中，所述发光功能层还包括位于所述第二功能层远离所述衬底基板的一侧的第三功能层；
    所述第三功能层的边缘在所述衬底基板上的正投影位于所述第二功能层的边缘在所述衬底基板上的正投影内，且所述第三功能层在所述衬底基板上的正投影的面积小于所述第二功能层在所述衬底基板上的正投影的面积。
  8. 根据权利要求7所述的显示基板，其中，所述第二功能层与所述第三功能层接触，
    所述第二功能层远离所述衬底基板的表面包括与所述第三功能层接触的部分以及与所述第二电极接触的部分；
    所述第二功能层的侧表面、所述第二功能层远离所述衬底基板的表面的与所述第二电极接触的部分、以及所述第三功能层的侧表面彼此相接且在所述至少一侧表面形成第二台阶结构，所述第二电极覆盖所述第二台阶结构且与所述第二台阶结构接触。
  9. 根据权利要求8所述的显示基板，其中，所述第二电极覆盖所述第一台阶结构和所述第二台阶结构的部分在所述发光功能层的所述至少一侧表面具有第一阶梯结构。
  10. 根据权利要求9所述的显示基板，其中，所述发光功能层还包括位于所述第三功能层远离所述衬底基板的一侧的第四功能层；
    所述第四功能层的边缘在所述衬底基板上的正投影位于所述第三功能层的边缘在所述衬底基板上的正投影内，且所述第四功能层在所述衬底基板上的正投影的面积小于所述第三功能层在所述衬底基板上的正投影的面积。
  11. 根据权利要求10所述的显示基板，其中，所述第三功能层与所述第四功能层接触，
    所述第三功能层远离所述衬底基板的表面包括与所述第四功能层接触的 部分以及与所述第二电极接触的部分；
    所述第三功能层的侧表面、所述第三功能层远离所述衬底基板的表面的与所述第二电极接触的部分、以及所述第四功能层的侧表面彼此相接且在所述至少一侧表面形成第三台阶结构，所述第二电极覆盖所述第三台阶结构且与所述第三台阶结构接触。
  12. 根据权利要求11所述的显示基板，其中，所述第二电极覆盖所述第二台阶结构和所述第三台阶结构的部分在所述发光功能层的所述至少一侧表面具有第二阶梯结构。
  13. 根据权利要求12所述的显示基板，其中，所述发光功能层还包括位于所述第四功能层远离所述衬底基板的一侧的第五功能层；
    所述第五功能层的边缘在所述衬底基板上的正投影位于所述第四功能层的边缘在所述衬底基板上的正投影内，且所述第五功能层在所述衬底基板上的正投影的面积小于所述第四功能层在所述衬底基板上的正投影的面积。
  14. 根据权利要求13所述的显示基板，其中，所述第四功能层与所述第五功能层接触，
    所述第四功能层远离所述衬底基板的表面包括与所述第五功能层接触的部分以及与所述第二电极接触的部分；
    所述第四功能层的侧表面、所述第四功能层远离所述衬底基板的表面的与所述第二电极接触的部分、以及所述第五功能层的侧表面彼此相接且在所述至少一侧表面形成第四台阶结构，所述第二电极覆盖所述第四台阶结构且与所述第四台阶结构接触。
  15. 根据权利要求14所述的显示基板，其中，所述第二电极覆盖所述第三台阶结构和所述第四台阶结构的部分在所述发光功能层的所述至少一侧表面具有第三阶梯结构。
  16. 根据权利要求13-15任一所述的显示基板，其中，所述第一功能层为空穴注入层，所述第二功能层为空穴传输层，所述第三功能层为发光层，所述第四功能层为电子传输层，所述第五功能层为电子注入层。
  17. 根据权利要求2-16任一所述的显示基板，其中，所述显示基板包括显示区域和围绕所述显示区域的周边区域，
    所述显示基板还包括位于所述周边区域中的辅助电极，
    其中，所述辅助电极至少部分环绕所述显示区域；
    所述第一电极位于所述显示区域中，
    所述第二电极位于所述显示区域和所述周边区域中，且在所述周边区域中通过过孔或直接接触与所述辅助电极电连接。
  18. 根据权利要求17所述的显示基板，其中，所述衬底基板为硅基板，且所述硅基板包括像素驱动电路，
    所述像素驱动电路被配置为与所述第一电极电连接。
  19. 根据权利要求17或18所述的显示基板，其中，所述辅助电极与所述第一电极同层设置且彼此绝缘，
    所述辅助电极的材料与所述第一电极的材料相同。
  20. 根据权利要求17-19任一所述的显示基板，其中，所述周边区域包括连接电极区和传感器区，
    所述连接电极区至少部分环绕所述传感器区，所述传感器区至少部分环绕所述显示区域；
    所述辅助电极位于所述连接电极区中，
    所述传感器区在所述衬底基板上的正投影位于所述发光功能层中的任一功能层在所述衬底基板上的正投影内。
  21. 根据权利要求20所述的显示基板，其中，所述周边区域还包括第一虚设子区和第二虚设子区，
    所述连接电极区至少部分环绕所述第一虚设子区，所述第一虚设子区至少部分环绕所述传感器区；
    所述传感器区至少部分环绕所述第二虚设子区，所述第二虚设子区至少部分环绕所述显示区域；
    所述发光功能层位于所述显示区域、所述第二虚设子区、所述传感器区和所述第一虚设子区中。
  22. 根据权利要求17-21任一所述的显示基板，其中，在所述辅助电极与所述第一功能层的侧表面接触的情形，所述第一台阶结构为所述第一功能层远离所述衬底基板的表面的与所述第二电极接触的部分、以及所述第二功能层的侧表面。
  23. 根据权利要求1-22任一所述的显示基板，还包括彩膜层，
    其中，所述彩膜层位于所述第二电极远离所述衬底基板的一侧，
    所述发光功能层在所衬底基板上的正投影位于所述彩膜层在所述衬底基板上的正投影内。
  24. 根据权利要求1-23中任一所述的显示基板，其中，所述显示基板为有机发光二极管显示基板或者量子点发光二极管显示基板。
  25. 一种显示面板，包括如权利要求1-24中任一项所述的显示基板。
  26. 一种显示基板的制备方法，包括：
    提供衬底基板；
    在所述衬底基板上形成第一电极；
    在所述第一电极上形成发光功能层；以及
    在所述发光功能层上形成第二电极；
    其中，所述第一电极、所述发光功能层和所述第二电极构成发光元件，
    所述发光功能层包括第一功能层和位于所述第一功能层远离所述衬底基板的一侧的第二功能层，所述第二功能层的边缘在所述衬底基板上的正投影位于所述第一功能层的边缘在所述衬底基板上的正投影内，且所述第二功能层在所述衬底基板上的正投影的面积小于所述第一功能层在所述衬底基板上的正投影的面积；
    所述第二电极覆盖所述发光功能层的至少一侧表面和远离所述衬底基板的部分表面，且与所述发光功能层的至少一侧表面和远离所述衬底基板的部分表面接触。
  27. 根据权利要求26所述的制备方法，其中，所述第一功能层远离所述衬底基板的表面包括被所述第二功能层覆盖的部分，
    所述第一功能层远离所述衬底基板的表面的除所述被所述第二功能层覆盖的部分以外的部分与所述第二电极接触。
  28. 根据权利要求27所述的制备方法，其中，所述第二电极覆盖所述发光功能层的至少一侧表面的部分具有沿所述衬底基板的表面横向延伸的分量。
  29. 根据权利要求27或28所述的制备方法，其中，所述第一功能层与所述第二功能层接触，
    所述第一功能层远离所述衬底基板的表面包括与所述第二功能层接触的 部分以及与所述第二电极接触的部分；
    所述第一功能层的侧表面、所述第一功能层远离所述衬底基板的表面的与所述第二电极接触的部分、以及所述第二功能层的侧表面彼此相接且在所述至少一侧表面形成第一台阶结构，所述第二电极覆盖所述第一台阶结构且与所述第一台阶结构接触。
  30. 根据权利要求29所述的制备方法，还包括：在所述第二功能层远离所述衬底基板的一侧形成第三功能层，
    其中，所述第三功能层的边缘在所述衬底基板上的正投影位于所述第二功能层的边缘在所述衬底基板上的正投影内，且所述第三功能层在所述衬底基板上的正投影的面积小于所述第二功能层在所述衬底基板上的正投影的面积。
  31. 根据权利要求30所述的制备方法，其中，所述第二功能层与所述第三功能层接触，
    所述第二功能层远离所述衬底基板的表面包括与所述第三功能层接触的部分以及与所述第二电极接触的部分；
    所述第二功能层的侧表面、所述第二功能层远离所述衬底基板的表面的与所述第二电极接触的部分、以及所述第三功能层的侧表面彼此相接且在所述至少一侧表面形成第二台阶结构，所述第二电极覆盖所述第二台阶结构且与所述第二台阶结构接触。
  32. 根据权利要求31所述的制备方法，其中，所述第二电极覆盖所述第一台阶结构和所述第二台阶结构的部分在所述发光功能层的所述至少一侧表面具有第一阶梯结构。
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