WO2021159589A1 - 柔性显示面板及制备方法 - Google Patents

柔性显示面板及制备方法 Download PDF

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Publication number
WO2021159589A1
WO2021159589A1 PCT/CN2020/080962 CN2020080962W WO2021159589A1 WO 2021159589 A1 WO2021159589 A1 WO 2021159589A1 CN 2020080962 W CN2020080962 W CN 2020080962W WO 2021159589 A1 WO2021159589 A1 WO 2021159589A1
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Prior art keywords
layer
display panel
barrier layer
groove
flexible display
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PCT/CN2020/080962
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English (en)
French (fr)
Inventor
孙小茜
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Wuhan China Star Optoelectronics Semiconductor Display Technology Co Ltd
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Wuhan China Star Optoelectronics Semiconductor Display Technology Co Ltd
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Application filed by Wuhan China Star Optoelectronics Semiconductor Display Technology Co Ltd filed Critical Wuhan China Star Optoelectronics Semiconductor Display Technology Co Ltd
Priority to EP20767459.9A priority Critical patent/EP4105993B1/en
Priority to US16/755,890 priority patent/US11527559B2/en
Publication of WO2021159589A1 publication Critical patent/WO2021159589A1/zh
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/411—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs characterised by materials, geometry or structure of the substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/01—Manufacture or treatment
    • H10D86/021—Manufacture or treatment of multiple TFTs
    • H10D86/0212—Manufacture or treatment of multiple TFTs comprising manufacture, treatment or coating of substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/451—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs characterised by the compositions or shapes of the interlayer dielectrics
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/60—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs wherein the TFTs are in active matrices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K77/00—Constructional details of devices covered by this subclass and not covered by groups H10K10/80, H10K30/80, H10K50/80 or H10K59/80
    • H10K77/10—Substrates, e.g. flexible substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/549—Organic PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Definitions

  • This application relates to the field of display technology, and in particular to a flexible display panel and a manufacturing method.
  • the film stack at the position of the cutting track is composed of an upper inorganic layer and a lower organic layer.
  • the middle crack extends to the inside of the display panel (effective display area), which may damage the functional film layer, thereby affecting the display effect of the flexible display panel.
  • the existing flexible display panel and preparation method have cracks due to the poor ductility of the inorganic layer after cutting.
  • the cracks extend to the inside of the display panel during the bending process, which may damage the functional film layer. Further affect the display effect of the flexible display panel.
  • the embodiments of the present application provide a flexible display panel and a manufacturing method, which can solve the problem of the existing flexible display panel without increasing the mask, process flow, and materials, due to the poor ductility of the inorganic layer after cutting. Cracks are generated, which extend to the inside of the display panel during the bending process, which may damage the functional film layer and further affect the technical problem of the display effect of the flexible display panel.
  • an embodiment of the present application provides a flexible display panel including a display area and a non-display area, and a portion of the flexible display panel located in the non-display area includes a flexible substrate, a multi-barrier layer, and a planarization layer;
  • the peripheral edge of the non-display area is provided with a cutting channel
  • the cutting channel is provided with a groove
  • one end of the planarization layer extends at least to the multi-barrier layer and the multi-barrier layer through the side wall of the groove. The interface formed between the flexible substrates.
  • the groove is provided on the multi-barrier layer, and the groove penetrates the multi-barrier layer and part of the flexible substrate.
  • the groove is rectangular, and the width of the groove is 3-25 microns.
  • the material of the flexible substrate is polyimide
  • the material of the planarization layer is organic photoresist
  • the multi-barrier layer is a multilayer laminated inorganic film layer, and the material of the inorganic film layer includes aluminum oxide, zinc oxide, titanium oxide, silicon dioxide, oxide One or several combinations of zirconium.
  • the thickness of the multi-barrier layer is 1 to 2 microns, and the thickness of the planarization layer is 1 to 10 microns.
  • an embodiment of the present application further provides a method for manufacturing a flexible display panel, the flexible display panel including a display area and a non-display area, the non-display area is provided with a cutting line on its peripheral edge, and the method includes:
  • a planarization layer is formed on the multi-barrier layer, the planarization layer completely covers the TFT array layer, and one end of the planarization layer extends at least to the multi-potential layer through the sidewall of the groove. The interface formed between the barrier layer and the flexible substrate.
  • the multi-barrier layer is a multilayer laminated inorganic film layer, and the material of the inorganic film layer includes aluminum oxide, zinc oxide, One or a combination of titanium oxide, silicon dioxide, and zirconium oxide.
  • the groove is rectangular, and the width of the groove is 3-25 microns.
  • the material of the flexible substrate is polyimide
  • the material of the multi-barrier layer is silicon dioxide
  • the material of the planarization layer is Organic photoresist.
  • the flexible display panel and the manufacturing method provided by the embodiments of the present application avoid the poor ductility of the inorganic layer during the cutting process of the flexible display panel without increasing the mask and process flow.
  • the cracks generated during the bending process further ensure the display performance of the flexible display panel.
  • FIG. 1 is a schematic diagram of a cross-sectional structure of a flexible display panel provided by an embodiment of the application.
  • FIG. 2 is a schematic flow chart of a manufacturing method of a flexible display panel provided by an embodiment of the application.
  • 3A-3D are schematic structural diagrams of a method for manufacturing a flexible display panel provided by an embodiment of the application.
  • the embodiments of the present application are directed to the existing flexible display panel and preparation method. Since the inorganic layer has poor ductility after cutting, cracks are generated. The cracks extend to the inside of the display panel during the bending process, which may damage the functional film layer. This embodiment can solve the technical problem that further affects the display effect of the flexible display panel.
  • the flexible display panel includes a display area 11 and a non-display area 12, and a part of the flexible display panel located in the display area 11 includes a flexible substrate 13, a multi-barrier layer 14, a TFT array layer 15 and a planarization layer 16.
  • the portion of the flexible display panel located in the non-display area 12 includes the flexible substrate 13, the multi-barrier layer 14 and the planarization layer 16.
  • the peripheral edge of the non-display area 12 is provided with a cutting channel 121
  • the cutting channel 121 is provided with a groove 1211
  • one end of the planarization layer 16 extends through the side wall of the groove 1211 at least to An interface formed between the multi-barrier layer and the flexible substrate.
  • one end of the planarization layer 16 extends to the bottom of the groove 1211 through the sidewall of the groove 1211.
  • the display area 11 is used to display an image
  • the non-display area 12 is used to set a peripheral circuit of the display area 11.
  • the material of the flexible substrate 13 is polyimide.
  • the multi-barrier layer 14 is a multilayer laminated inorganic film layer, and the material of the inorganic film layer includes one or a combination of aluminum oxide, zinc oxide, titanium oxide, silicon dioxide, and zirconium oxide. .
  • the material of the inorganic film layer is preferably silicon dioxide.
  • the material of the planarization layer 16 is an organic photoresist, and the material of the planarization layer 16 can be well combined with the multi-barrier layer.
  • the thickness of the multi-barrier layer is 1 to 2 microns
  • the thickness of the planarization layer is 1 to 10 microns.
  • the shape of the groove 1211 is rectangular, the width of the groove is 3-25 microns, and the groove 1211 penetrates the multi-barrier layer 14 and part of the flexible substrate 13 That is, the depth of the groove 1211 is greater than the thickness of the multi-barrier layer, and the depth of the groove 1211 is 1 to 5 microns.
  • the sidewall of the groove 1211 away from the planarization layer 16 is less than 300 microns from the edge of the flexible substrate.
  • FIG. 2 it is a schematic flow chart of a method for preparing a flexible display panel provided by an embodiment of the application.
  • the flexible display panel includes a display area 11 and a non-display area 12, and the non-display area 12 has a peripheral edge provided with The cutting lane 121, in the cutting process of the flexible display panel, a cutting knife cuts the flexible display panel along the cutting lane 121, and the method includes the following:
  • the S10 further includes:
  • a flexible substrate 13 is provided, and the material of the flexible substrate 13 is preferably polyimide; then, chemical vapor deposition (Chemical Vapor Deposition) can be used on the flexible substrate 13 Vapor Deposition, PECVD for short) process, evaporation process or sputtering process to deposit the multi-barrier layer 14 on the base substrate; the multi-barrier layer 14 is a multilayer laminated inorganic film layer, the inorganic film layer
  • the materials include one or a combination of alumina, zinc oxide, titanium oxide, silicon dioxide, and zirconium oxide.
  • the material of the inorganic film layer is preferably silicon dioxide.
  • the cutting lane 121 is provided on the multi-barrier layer 14, and the thickness of the multi-barrier layer is 1 to 2 microns, as shown in FIG. 3A.
  • the S20 further includes:
  • a TFT array layer 15 is formed on the multi-barrier layer 14, and the TFT array layer 15 is located in the display area 11.
  • the TFT array layer 14 includes a gate buffer layer, an active layer, a gate insulating layer, a gate electrode, an interlayer insulating layer, and source and drain electrodes.
  • the TFT array layer 15 also has perforated and channel regions. .
  • the TFT array layer 15 is used to drive the pixels of the flexible display panel, as shown in FIG. 3B.
  • a groove 1211 is opened on a part of the multi-barrier layer 14 located in the scribe lane 121, and the groove 1211 penetrates the multi-barrier layer 14 and a part of the flexible substrate 13.
  • the S30 further includes:
  • a first groove is opened on the part of the multi-barrier layer 14 located in the scribe lane 121 by the CNT process.
  • the first groove penetrates the part of the multi-barrier layer 14
  • the first groove On the basis of the groove, the groove 1211 is opened through the ISO process or the DH process, and the groove 1211 penetrates the multi-barrier layer 14 and part of the flexible substrate 13.
  • the shape of the groove 1211 is rectangular, the width of the groove is 3-25 microns, the depth of the groove 1211 is greater than the thickness of the multi-barrier layer, and the groove 1211 The depth of 1211 is 1 to 5 microns, as shown in Figure 3C.
  • a planarization layer 16 is formed on the multi-barrier layer 14, the planarization layer 16 completely covers the TFT array layer 15, and one end of the planarization layer 16 passes through the sidewall of the groove 1211 at least It extends to the interface formed between the multi-barrier layer 14 and the flexible substrate 13.
  • the S40 further includes: first, a chemical vapor deposition process, an evaporation process, or a sputtering process is used to deposit a planarization layer 16 on the base substrate on the multi-barrier layer 14.
  • the planarization layer 16 completely covers the TFT array layer 15.
  • One end of the planarization layer 16 extends through the display area 11 to the non-display area 12 and extends through the sidewalls of the groove 1211 to at least the multi-barrier
  • the interface formed between the layer 14 and the flexible substrate 13 enables the interface to be covered by the planarization layer 16, thereby preventing cracks from occurring at the interface.
  • one end of the planarization layer 16 extends to the bottom of the groove 1211 through the sidewall of the groove 1211.
  • the material of the planarization layer 16 is preferably an organic photoresist, the material of the planarization layer 16 can be well combined with the multi-barrier layer, and the thickness of the planarization layer is 1-10 microns, as shown in FIG. 3D Shown.
  • the flexible display panel and the manufacturing method provided by the embodiments of the present application can completely solve the problem of crack occurrence.
  • this technology is not only suitable for the prevention of cracks at the position of the cutting path, but also can be applied to the special-shaped opening process or the cutting crack prevention process for special-shaped products.
  • the thinning of the cutting channel is conducive to laser cutting (laser cut) Process cutting, time and cost are reduced.
  • the flexible display panel and the manufacturing method provided by the embodiments of the present application avoid the problem of poor ductility of the inorganic layer during the cutting process of the flexible display panel without increasing the mask and process flow.
  • the cracks generated during the bending process further ensure the display performance of the flexible display panel.

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Abstract

一种柔性显示面板及制备方法，柔性显示面板包括显示区（11）以及非显示区（12），位于非显示区（12）的部分柔性显示面板包括柔性衬底（13）、多势垒层（14）以及平坦化层（16）；非显示区（12）的外围边缘设置有切割道（121），切割道（121）内设有凹槽（1211），平坦化层（16）的一端经凹槽（1211）的侧壁至少延伸至多势垒层（14）与柔性衬底（13）之间形成的分界面。

Description

柔性显示面板及制备方法 技术领域
本申请涉及显示技术领域，尤其涉及一种柔性显示面板及制备方法。
 背景技术
现阶段电子行业飞速发展，随着常规平板产品产能提高，市面上常规平板2D产品泛滥。人们对于3D产品及柔性弯折产品需求不断提高。为满足客户需求，实现产品多样化及便捷化，目前推出的弯折显示器除了需要具备超薄、便捷等优势，还要满足各种角度弯折。应用于多媒体、车载、医疗设备等各个领域。
目前在柔性面板行业中存在多次切割的工艺，得到最后的显示面板。然而，现有技术的显示面板中，其切割道位置的膜层叠构为上层无机层下层有机层，在切割过程中，由于无机层延展性较差，切割后容易产生细小裂纹，在弯折过程中裂纹延伸至显示面板内部（有效显示区域），可能会破坏功能膜层，从而影响柔性显示面板的显示效果。
综上所述，现有的柔性显示面板及制备方法，由于在切割后因无机层延展性较差而产生裂纹，其在弯折过程中裂纹延伸至显示面板内部，可能会破坏功能膜层，进一步影响柔性显示面板的显示效果。
 技术问题
现有的柔性显示面板及制备方法，由于在切割后因无机层延展性较差而产生裂纹，其在弯折过程中裂纹延伸至显示面板内部，可能会破坏功能膜层，进一步影响柔性显示面板的显示效果。
 技术解决方案
本申请实施例提供一种柔性显示面板及制备方法，能够在不增加掩膜版及工艺流程、材料的前提下，以解决现有的柔性显示面板，由于在切割后因无机层延展性较差而产生裂纹，其在弯折过程中裂纹延伸至显示面板内部，可能会破坏功能膜层，进一步影响柔性显示面板的显示效果的技术问题。
第一方面，本申请实施例提供一种柔性显示面板，包括显示区以及非显示区，位于所述非显示区的部分所述柔性显示面板包括柔性衬底、多势垒层以及平坦化层；
其中，所述非显示区的外围边缘设置有切割道，所述切割道内设有凹槽，所述平坦化层的一端经所述凹槽的侧壁至少延伸至所述多势垒层与所述柔性衬底之间形成的分界面。
在本申请实施例所提供的柔性显示面板中，所述凹槽设于所述多势垒层上，所述凹槽贯穿所述多势垒层以及部分所述柔性衬底。
在本申请实施例所提供的柔性显示面板中，所述凹槽为矩形，所述凹槽的宽度为3~25微米。
在本申请实施例所提供的柔性显示面板中，所述柔性衬底的材料为聚酰亚胺，所述平坦化层的材料为有机光阻。
在本申请实施例所提供的柔性显示面板中，所述多势垒层为多层层叠的无机膜层，所述无机膜层的材料包括氧化铝、氧化锌、氧化钛、二氧化硅、氧化锆中的一种或几种组合。
在本申请实施例所提供的柔性显示面板中，所述多势垒层的厚度为1~2微米，所述平坦化层的厚度为1~10微米。
第二方面，本申请实施例还提供一种柔性显示面板的制备方法，所述柔性显示面板包括显示区以及非显示区，所述非显示区的外围边缘设置有切割道，所述方法包括：
S10，在一柔性衬底上形成多势垒层，所述多势垒层上设置有所述切割道；
S20，在所述多势垒层上形成TFT阵列层，所述TFT阵列层位于所述显示区；
S30，在位于所述切割道的部分所述多势垒层上开设凹槽，所述凹槽贯穿所述多势垒层以及部分所述柔性衬底；
S40，在所述多势垒层上形成平坦化层，所述平坦化层完全覆盖所述TFT阵列层，所述平坦化层的一端经所述凹槽的侧壁至少延伸至所述多势垒层与所述柔性衬底之间形成的分界面。
在本申请实施例所提供的柔性显示面板的制备方法中，所述S10中，所述多势垒层为多层层叠的无机膜层，所述无机膜层的材料包括氧化铝、氧化锌、氧化钛、二氧化硅、氧化锆中的一种或几种组合。
在本申请实施例所提供的柔性显示面板的制备方法中，所述S30中，所述凹槽为矩形，所述凹槽的宽度为3~25微米。
在本申请实施例所提供的柔性显示面板的制备方法中，所述柔性衬底的材料为聚酰亚胺，所述多势垒层的材料为二氧化硅，所述平坦化层的材料为有机光阻。
 有益效果
相较于现有技术，本申请实施例所提供的柔性显示面板及制备方法，在不增加掩膜版及工艺流程的前提下，避免了柔性显示面板在切割过程中因无机层延展性较差而在弯折过程产生的裂纹，进一步的确保了柔性显示面板的显示性能。
 附图说明
图1为本申请实施例所提供的柔性显示面板的截面结构示意图。
图2为本申请实施例所提供的柔性显示面板的制备方法的流程示意图。
图3A-3D为本申请实施例所提供的柔性显示面板的制备方法的结构示意图。
 本发明的实施方式
本申请实施例针对现有的柔性显示面板及制备方法，由于在切割后因无机层延展性较差而产生裂纹，其在弯折过程中裂纹延伸至显示面板内部，可能会破坏功能膜层，进一步影响柔性显示面板的显示效果的技术问题，本实施例能够解决该缺陷。
如图1所示，为本申请实施例所提供的柔性显示面板的截面结构示意图。其中，所述柔性显示面板包括显示区11以及非显示区12，位于所述显示区11的部分所述柔性显示面板包括柔性衬底13、多势垒层14、TFT阵列层15以及平坦化层16，位于所述非显示区12的部分所述柔性显示面板包括所述柔性衬底13、所述多势垒层14以及所述平坦化层16。
具体地，所述非显示区12的外围边缘设置有切割道121，所述切割道121内设有凹槽1211，所述平坦化层16的一端经所述凹槽1211的侧壁至少延伸至所述多势垒层与所述柔性衬底之间形成的分界面。优选地，所述平坦化层16的一端经所述凹槽1211的侧壁延伸至所述凹槽1211的底部。
具体地，所述显示区域11上用于显示图像，所述非显示区域12用于设置所述显示区域11的外围电路。
具体地，所述柔性衬底13的材料为聚酰亚胺。
具体地，所述多势垒层14为多层层叠的无机膜层，所述无机膜层的材料包括氧化铝、氧化锌、氧化钛、二氧化硅、氧化锆中的一种或几种组合。本发明实施例中，所述无机膜层的材料优选为二氧化硅。
具体地，所述平坦化层16的材料为有机光阻，所述平坦化层16的材料能够与所述多势垒层良好的结合。
具体地，所述多势垒层的厚度为1~2微米，所述平坦化层的厚度为1~10微米。
在本申请实施例中，所述凹槽1211的形状为矩形，所述凹槽的宽度为3~25微米，所述凹槽1211贯穿所述多势垒层14以及部分所述柔性衬底13，即所述凹槽1211的深度大于所述多势垒层的厚度，所述凹槽1211的深度为1~5微米。优选地，所述凹槽1211中远离所述平坦化层16一侧的侧壁距离所述柔性衬底的边缘小于300微米。
如图2所示，为本申请实施例所提供的柔性显示面板的制备方法的流程示意图，所述柔性显示面板包括显示区11以及非显示区12，所述非显示区12的外围边缘设置有切割道121，在所述柔性显示面板的切割制程中，切割刀沿着所述切割道121对所述柔性显示面板进行切割，所述方法包括如下：
S10，在一柔性衬底13上形成多势垒层14，所述多势垒层14上设置有所述切割道121。
具体地，所述S10还包括：
首先，提供一柔性衬底13，所述柔性衬底13的材料优选为聚酰亚胺；之后，在所述柔性衬底13上可以采用化学气相沉积(Chemical Vapor Deposition，简称PECVD)工艺、蒸镀工艺或者溅射工艺在衬底基板上沉积所述多势垒层14；所述多势垒层14为多层层叠的无机膜层，所述无机膜层的材料包括氧化铝、氧化锌、氧化钛、二氧化硅、氧化锆中的一种或几种组合。本发明实施例中，所述无机膜层的材料优选为二氧化硅。具体地，所述多势垒层14上设置有所述切割道121，所述多势垒层的厚度为1~2微米，如图3A所示。
S20，在所述多势垒层14上形成TFT阵列层15，所述TFT阵列层15位于所述显示区11。
具体地，所述S20还包括：
首先，在所述多势垒层14上形成TFT阵列层15，所述TFT阵列层15位于所述显示区11。其中，所述TFT阵列层14包括栅极缓冲层、有源层、栅极绝缘层、栅极、层间绝缘层以及源漏极，所述TFT阵列层15上还具有打孔和沟道区域。所述TFT阵列层15用于驱动所述柔性显示面板的像素，如图3B所示。
S30，在位于所述切割道121的部分所述多势垒层14上开设凹槽1211，所述凹槽1211贯穿所述多势垒层14以及部分所述柔性衬底13。具体地，所述S30还包括：
首先，在位于所述切割道121的部分所述多势垒层14上通过CNT工艺开设第一凹槽，所述第一凹槽贯穿部分所述多势垒层14之后，在所述第一凹槽的基础上通过ISO工艺或者DH工艺开设所述凹槽1211，所述凹槽1211贯穿所述多势垒层14以及部分所述柔性衬底13。在本发明实施例中，所述凹槽1211的形状为矩形，所述凹槽的宽度为3~25微米，所述凹槽1211的深度大于所述多势垒层的厚度，所述凹槽1211的深度为1~5微米，如图3C所示。
S40，在所述多势垒层14上形成平坦化层16，所述平坦化层16完全覆盖所述TFT阵列层15，所述平坦化层16的一端经所述凹槽1211的侧壁至少延伸至所述多势垒层14与所述柔性衬底13之间形成的分界面。
具体地，所述S40还包括：首先，在所述多势垒层14上采用化学气相沉积工艺、蒸镀工艺或者溅射工艺在衬底基板上沉积形成平坦化层16，所述平坦化层16完全覆盖所述TFT阵列层15，所述平坦化层16的一端经所述显示区11延伸至所述非显示区12并经所述凹槽1211的侧壁至少延伸至所述多势垒层14与所述柔性衬底13之间形成的分界面，使所述分界面被所述平坦化层16所覆盖，进而实现所述分界面发生裂纹防止。优选地，所述平坦化层16的一端经所述凹槽1211的侧壁延伸至所述凹槽1211的底部。所述平坦化层16的材料优选为有机光阻，所述平坦化层16的材料能够与所述多势垒层良好的结合，所述平坦化层的厚度为1~10微米，如图3D所示。
本申请实施例所提供的柔性显示面板及制备方法，能够彻底解决裂纹发生问题。同时本技术不仅适用于切割道位置裂纹防止，也可以应用到异形开孔工艺或异形产品切割裂纹防止工艺上。另外，切割道减薄有利于镭射切割（laser cut）工艺切割，时间和成本上都有所降低。
以上各个操作的具体实施可参见前面的实施例，在此不再赘述。
综上所述，本申请实施例所提供的柔性显示面板及制备方法，在不增加掩膜版及工艺流程的前提下，避免了柔性显示面板在切割过程中因无机层延展性较差而在弯折过程产生的裂纹，进一步的确保了柔性显示面板的显示性能。
可以理解的是，对本领域普通技术人员来说，可以根据本申请的技术方案及其发明构思加以等同替换或改变，而所有这些改变或替换都应属于本申请所附的权利要求的保护范围。

Claims (10)

  1. 一种柔性显示面板，包括显示区以及非显示区，其中，位于所述非显示区的部分所述柔性显示面板包括柔性衬底、多势垒层以及平坦化层；
    其中，所述非显示区的外围边缘设置有切割道，所述切割道内设有凹槽，所述平坦化层的一端经所述凹槽的侧壁至少延伸至所述多势垒层与所述柔性衬底之间形成的分界面。
  2. 根据权利要求1所述的柔性显示面板，其中，所述凹槽设于所述多势垒层上，所述凹槽贯穿所述多势垒层以及部分所述柔性衬底。
  3. 根据权利要求2所述的柔性显示面板，其中，所述凹槽为矩形，所述凹槽的宽度为3~25微米。
  4. 根据权利要求1所述的柔性显示面板，其中，所述柔性衬底的材料为聚酰亚胺，所述平坦化层的材料为有机光阻。
  5. 根据权利要求1所述的柔性显示面板，其中，所述多势垒层为多层层叠的无机膜层，所述无机膜层的材料包括氧化铝、氧化锌、氧化钛、二氧化硅、氧化锆中的一种或几种组合。
  6. 根据权利要求1所述的柔性显示面板，其中，所述多势垒层的厚度为1~2微米，所述平坦化层的厚度为1~10微米。
  7. 一种柔性显示面板的制备方法，所述柔性显示面板包括显示区以及非显示区，所述非显示区的外围边缘设置有切割道，其中，所述方法包括：
    S10，在一柔性衬底上形成多势垒层，所述多势垒层上设置有所述切割道；
    S20，在所述多势垒层上形成TFT阵列层，所述TFT阵列层位于所述显示区；
    S30，在位于所述切割道的部分所述多势垒层上开设凹槽，所述凹槽贯穿所述多势垒层以及部分所述柔性衬底；
    S40，在所述多势垒层上形成平坦化层，所述平坦化层完全覆盖所述TFT阵列层，所述平坦化层的一端经所述凹槽的侧壁至少延伸至所述多势垒层与所述柔性衬底之间形成的分界面。
  8. 根据权利要求7所述的柔性显示面板的制备方法中，其中，所述S10中，所述多势垒层为多层层叠的无机膜层，所述无机膜层的材料包括氧化铝、氧化锌、氧化钛、二氧化硅、氧化锆中的一种或几种组合。
  9. 根据权利要求7所述的柔性显示面板的制备方法中，其中，所述S30中，所述凹槽为矩形，所述凹槽的宽度为3~25微米。
  10. 根据权利要求7所述的柔性显示面板的制备方法中，其中，所述柔性衬底的材料为聚酰亚胺，所述多势垒层的材料为二氧化硅，所述平坦化层的材料为有机光阻。
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