WO2021189495A1 - 显示面板和显示装置 - Google Patents

显示面板和显示装置 Download PDF

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Publication number
WO2021189495A1
WO2021189495A1 PCT/CN2020/081880 CN2020081880W WO2021189495A1 WO 2021189495 A1 WO2021189495 A1 WO 2021189495A1 CN 2020081880 W CN2020081880 W CN 2020081880W WO 2021189495 A1 WO2021189495 A1 WO 2021189495A1
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WIPO (PCT)
Prior art keywords
reflective electrode
layer
main reflective
main
distance
Prior art date
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Ceased
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PCT/CN2020/081880
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English (en)
French (fr)
Inventor
杨盛际
董学
陈小川
卢鹏程
王辉
王晏酩
宋亚歌
李健通
黄冠达
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BOE Technology Group Co Ltd
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BOE Technology Group Co Ltd
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Application filed by BOE Technology Group Co Ltd filed Critical BOE Technology Group Co Ltd
Priority to EP20900713.7A priority Critical patent/EP4131394B1/en
Priority to US17/259,238 priority patent/US11980047B2/en
Priority to PCT/CN2020/081880 priority patent/WO2021189495A1/zh
Priority to CN202080000400.6A priority patent/CN113748515B/zh
Publication of WO2021189495A1 publication Critical patent/WO2021189495A1/zh
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/131—Interconnections, e.g. wiring lines or terminals
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/805—Electrodes
    • H10K50/82—Cathodes
    • H10K50/824—Cathodes combined with auxiliary electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/122—Pixel-defining structures or layers, e.g. banks
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/123—Connection of the pixel electrodes to the thin film transistors [TFT]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/80—Constructional details
    • H10K59/805—Electrodes
    • H10K59/8051—Anodes
    • H10K59/80515—Anodes characterised by their shape
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/80—Constructional details
    • H10K59/805—Electrodes
    • H10K59/8051—Anodes
    • H10K59/80518—Reflective anodes, e.g. ITO combined with thick metallic layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/80—Constructional details
    • H10K59/805—Electrodes
    • H10K59/8052—Cathodes
    • H10K59/80521—Cathodes characterised by their shape
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/80—Constructional details
    • H10K59/805—Electrodes
    • H10K59/8052—Cathodes
    • H10K59/80522—Cathodes combined with auxiliary electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K2102/00—Constructional details relating to the organic devices covered by this subclass
    • H10K2102/301—Details of OLEDs
    • H10K2102/302—Details of OLEDs of OLED structures
    • H10K2102/3023—Direction of light emission
    • H10K2102/3026—Top emission
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/80—Constructional details
    • H10K59/8791—Arrangements for improving contrast, e.g. preventing reflection of ambient light
    • H10K59/8792—Arrangements for improving contrast, e.g. preventing reflection of ambient light comprising light absorbing layers, e.g. black layers

Definitions

  • the present disclosure relates to the field of display technology, and in particular, to a display panel and a display device.
  • OLED Compared to DMD (digital micromirror device) and LCOS (liquid crystal on silicon) microdisplays, silicon-based OLED microdisplays have very excellent display characteristics.
  • OLED has high brightness, rich colors, low drive voltage, fast response speed, low power consumption, and has a very good user experience; and
  • OLED is an all-solid-state device with good shock resistance and a wide operating temperature range (-40°C ⁇ 85 °C); It belongs to a self-luminous device, does not require a backlight, has a large viewing angle range and a thin thickness, which is beneficial to reduce the volume of the system, and is especially suitable for near-eye display systems.
  • the brightness of the display screen is a very critical indicator.
  • the microdisplay can be a high-brightness screen, so as to adjust its own brightness according to different working environments and scenes, so that the display brightness matches the sensory experience of the human eye.
  • the purpose of the present disclosure is to provide a display panel and a display device for improving display brightness.
  • a display panel including a display area and a peripheral area surrounding the display area, the display panel including:
  • the drive backplane includes a stacked drive circuit layer and a first reflective electrode layer;
  • the first reflective electrode layer includes a plurality of first main reflective electrodes located in the display area and a plurality of first reflective electrodes located in the peripheral area.
  • Auxiliary reflective electrodes, each of the first main reflective electrodes is electrically connected to the drive circuit layer;
  • the first insulating layer is provided on the side of the first reflective electrode layer away from the driving circuit layer;
  • the light-emitting device layer is arranged on the side of the first insulating layer away from the driving circuit layer, and includes a second reflective electrode layer and an organic light emitting layer which are sequentially stacked and arranged on the side of the first insulating layer away from the driving circuit layer.
  • Layer and a common electrode layer wherein the second reflective electrode layer includes a plurality of second main reflective electrodes located in the display area and a plurality of second auxiliary reflective electrodes located in the peripheral area; each of the second main reflective electrodes
  • the reflective electrode is electrically connected to each of the first main reflective electrodes in a one-to-one correspondence; and the orthographic projection of the second primary reflective electrode on the first reflective electrode layer is located in the corresponding first primary reflective electrode.
  • the peripheral area includes a sensing area
  • the first auxiliary reflective electrode includes a plurality of third auxiliary reflective electrodes located in the sensing area, and the third auxiliary reflective electrode is electrically connected to the drive circuit layer; the pattern of the third auxiliary reflective electrode is The patterns of the first main reflective electrodes are the same;
  • the second auxiliary reflective electrode includes a plurality of fourth auxiliary reflective electrodes located in the sensing area, and each of the fourth auxiliary reflective electrodes is electrically connected to each of the third auxiliary reflective electrodes in a one-to-one correspondence; the first The pattern of the four auxiliary reflective electrodes is the same as the pattern of the second main reflective electrode;
  • the organic light emitting layer and the common electrode layer cover the sensing area.
  • the second main reflective electrode is at any point on the orthographic projection of the first reflective electrode layer and corresponds to any point on the edge of the first main reflective electrode.
  • the minimum value of the distance between is the first distance
  • the minimum value of the distance between any point of the edge of the second main reflective electrode and the center of the second main reflective electrode is the first size value
  • the first distance is in the range of 13%-17% of the first size value.
  • the second main reflective electrode is at any point on the orthographic projection of the first reflective electrode layer and corresponds to any point on the edge of the first main reflective electrode.
  • the minimum distance between them is equal to 0.2 to 0.5 microns.
  • the distance between two adjacent first main reflective electrodes is a second distance
  • the minimum value of the distance between any point of the edge of the first main reflective electrode and the center of the first main reflective electrode is the second size value
  • the second distance is in the range of 7% to 10% of the second size value.
  • the distance between two adjacent first main reflective electrodes is equal to 0.1-0.3 micrometers.
  • the minimum value of the distance from the center of the second main reflective electrode is the first size value
  • the distance between two adjacent second main reflective electrodes is a third distance
  • the third distance is within a range of 30% to 50% of the first size value.
  • the distance between two adjacent second main reflective electrodes is equal to 0.6-1.0 micrometers.
  • the second reflective electrode layer includes a first titanium metal layer, a first aluminum metal layer, The second titanium metal layer and the molybdenum metal layer; wherein the thickness of the first titanium metal layer is 80-120 angstroms, the thickness of the first aluminum metal layer is 400-500 angstroms, and the thickness of the second titanium metal layer The thickness is 40-60 angstroms, and the thickness of the molybdenum metal layer is 40-60 angstroms.
  • the first reflective electrode layer includes a third titanium metal layer, a second aluminum metal layer, and a titanium nitride layer that are sequentially stacked on one side of the driving circuit layer; wherein, The thickness of the third titanium metal layer is 80-120 angstroms, the thickness of the second aluminum metal layer is 700-900 angstroms, and the thickness of the titanium nitride layer may be 80-120 angstroms.
  • the orthographic projection of the center of the second main reflective electrode on the first reflective electrode layer coincides with the center of the corresponding first main reflective electrode.
  • the peripheral area includes a binding area;
  • the first reflective electrode layer further includes a fifth auxiliary reflective electrode provided in the binding area;
  • the fifth auxiliary reflective electrode The electrode is electrically connected to the driving circuit layer;
  • the first insulating layer has a binding hole, and the binding hole exposes at least a part of the area of the fifth auxiliary reflective electrode.
  • the light-emitting device layer further includes a pixel definition layer
  • the pixel definition layer is disposed on the surface of the first insulating layer away from the driving backplane and in the gap between the second main reflective electrodes;
  • the orthographic projection of the pixel defining layer on the first reflective electrode layer partially overlaps with the first main reflective electrode.
  • the distance between two adjacent first auxiliary reflective electrodes is greater than the distance between two adjacent first main reflective electrodes;
  • the distance between the second auxiliary reflective electrodes is greater than the distance between two adjacent second main reflective electrodes.
  • the light transmittance of the first insulating layer is not less than 70%.
  • a second insulating layer is provided between the driving circuit layer and the first reflective electrode layer; the second insulating layer has a plurality of second via holes, each A second metal connection member is provided in the second via hole;
  • Each of the first main reflective electrodes is electrically connected to the driving circuit layer through the corresponding second metal connecting member;
  • the first insulating layer has a plurality of connection vias corresponding to each of the first main reflective electrodes one-to-one, and any one of the connection vias exposes a part of the surface of the corresponding first main reflective electrode;
  • Each of the second main reflective electrodes and each of the first main reflective electrodes are electrically connected in a one-to-one correspondence through the corresponding connection vias;
  • the orthographic projection of the connecting via on the second reflective electrode layer is located in the corresponding second main reflective electrode; the orthographic projection of the connecting via on the second reflective electrode layer is Any point, the minimum value of the distance from any point on the edge of the corresponding second main reflective electrode is not less than the first threshold; the first threshold is between two adjacent second main reflective electrodes Between 0.13 times and 1.3 times the spacing.
  • the minimum value of the distance is equal to the first threshold.
  • the second main reflective electrode has at least adjacent first and second edges; the orthographic projection of the connection via on the second reflective electrode layer Any point, the minimum value of the distance from any point on the first edge of the corresponding second main reflective electrode is equal to the first threshold; and the connection via is on the second reflective electrode layer The minimum value of the distance between any point of the orthographic projection and any point of the corresponding second edge of the second main reflective electrode is equal to the first threshold.
  • the minimum value of the distance between any point of the edge of the second main reflective electrode and the center of the second main reflective electrode is the first size value
  • the first threshold value is within a range of 5% to 8% of the first size value.
  • the orthographic projection of the second metal connector electrically connected to the second main reflective electrode on the second reflective electrode layer is located on the second main reflective electrode. , And does not completely overlap with the orthographic projection of the connection via on the second reflective electrode layer.
  • the minimum value of the distance is equal to the fourth distance
  • the distance between any point of the orthographic projection of the second metal connector on the second reflective electrode layer and any point on the edge of the second main reflective electrode electrically connected to the second metal connector is equal to the fifth distance
  • the fifth distance is smaller than the fourth distance.
  • the orthographic projection of the second metal connector on the second reflective electrode layer is located in the second main reflective electrode electrically connected to the second metal connector The distance between any point of the orthographic projection of the second metal connector on the second reflective electrode layer and any point on the edge of the second main reflective electrode electrically connected to the second metal connector The minimum value of is not greater than the second threshold; the second threshold is less than the first threshold.
  • the orthographic projection of the second main reflective electrode on the driving circuit layer is a symmetrical hexagon, and each of the second main reflective electrodes is arranged in a honeycomb shape. Cloth; each of the second main reflective electrodes forms a plurality of second main reflective electrode rows along the row direction;
  • the second main reflective electrode includes two oppositely arranged first side walls and four second side walls connected to the two first side walls; both of the first side walls are perpendicular to the Row direction; the four second side walls are surrounded by a first vertex and a second vertex that are set oppositely;
  • Any point of the orthographic projection of the connecting via on the corresponding second main reflective electrode is connected to any one of the two second side walls of the first vertex of the second main reflective electrode.
  • the minimum value of the distance between any points on the side wall is equal to the first threshold.
  • the orthographic projection position of the second metal connector electrically connected to the second main reflective electrode on the second main reflective electrode is The two adjacently arranged second main reflective electrodes of the electrode row have a symmetrical relationship.
  • the orthographic projection position of the connecting via on the corresponding second main reflective electrode is located at two adjacently arranged positions of the second main reflective electrode row.
  • the arrangement of the second main reflective electrodes is the same.
  • the diameter of the connection via is 0.2 to 0.4 micrometers.
  • a display device including the above-mentioned display panel.
  • FIG. 1 is a schematic cross-sectional structure diagram of a display panel according to an embodiment of the present disclosure.
  • FIG. 2 is a schematic top view of the structure of a display panel according to an embodiment of the present disclosure.
  • FIG. 3 is a schematic plan view of a first reflective electrode, a second reflective electrode, a second metal connector, and a connection via according to an embodiment of the present disclosure.
  • FIG. 4 is a schematic plan view of a second reflective electrode and a connection via according to an embodiment of the present disclosure.
  • FIG. 5 is a schematic plan view of a second reflective electrode and a connection via according to an embodiment of the present disclosure.
  • FIG. 6 is a schematic diagram of a structure of forming a first photoresist layer and an anti-reflection layer according to an embodiment of the present disclosure.
  • FIG. 7 is a schematic structural diagram of patterning the first photoresist layer and the anti-reflection layer according to an embodiment of the present disclosure.
  • FIG. 8 is a schematic diagram of a structure of forming a second reflective electrode material layer according to an embodiment of the present disclosure.
  • FIG. 9 is a schematic diagram of the structure of stripping the first photoresist layer according to an embodiment of the present disclosure.
  • FIG. 10 is a schematic diagram of a structure of forming a second photoresist layer according to an embodiment of the present disclosure.
  • FIG. 11 is a schematic structural diagram of patterning the second photoresist layer according to an embodiment of the present disclosure.
  • FIG. 12 is a schematic diagram of an arrangement structure of a second reflective electrode according to an embodiment of the present disclosure.
  • FIG. 13 is an electron micrograph of a second reflective electrode according to an embodiment of the present disclosure.
  • FIG. 14 is a schematic diagram of the structure of the first reflective electrode layer according to an embodiment of the present disclosure.
  • FIG. 15 is a schematic structural diagram of a second reflective electrode layer according to an embodiment of the present disclosure.
  • FIG. 16 is a schematic plan view of the first reflective electrode, the second reflective electrode, the second metal connection member and the connection via in another embodiment of the present disclosure.
  • a structure When a structure is “on” another structure, it may mean that a certain structure is integrally formed on other structures, or that a certain structure is “directly” installed on other structures, or that a certain structure is “indirectly” installed on other structures through another structure. On other structures.
  • the distance between two structures refers to the minimum value of the distance between any point on one structure and any point on the other structure.
  • the present disclosure provides a display panel.
  • the display panel includes a display area A and a peripheral area B surrounding the display area A.
  • the display panel includes a driving backplane 100, a first insulating layer 200, and a light emitting device layer. ;
  • the driving backplane 100 includes a driving circuit layer 110 and a first emitter electrode layer 130 that are stacked; the first emitter electrode layer 130 includes a plurality of first main reflective electrodes 131 located in the display area A and a peripheral area. A plurality of first auxiliary reflective electrodes 132 of B, each of the first main reflective electrodes 131 is electrically connected to the driving circuit layer 110.
  • the first insulating layer 200 is disposed on a side of the first emitter electrode layer 130 away from the driving circuit layer 110. As shown in FIGS.
  • the light emitting device layer is disposed on the side of the first insulating layer 200 away from the driving circuit layer 110, and includes a second emitting electrode layer laminated and disposed on the side of the first insulating layer 200 away from the driving circuit layer. 310.
  • the first emitter electrode layer 130 includes the first main reflective electrode 131 and the first auxiliary reflective electrode 132 in the display area A and the peripheral area B, respectively. In this way, the first emitter electrode layer 130 is prepared by etching. It is not necessary to completely etch the reflective electrode material of the peripheral region B, which can improve the uniformity of etching at the time of preparing the first emitter electrode layer 130, thereby improving the 131 etching accuracy of the first main reflective electrode.
  • the second emission electrode layer 310 includes the second main reflection electrode 311 and the second auxiliary reflection electrode 312 in the display area A and the peripheral area B, respectively. In this way, the second emission electrode layer 310 is prepared by etching.
  • the orthographic projection of the second main reflective electrode 311 on the first emitting electrode layer 130 is located in the corresponding first main reflective electrode 131. In this way, the light that is not reflected by the second main reflective electrode 311 can be reflected by the first main reflective electrode 131 to increase the light output rate of the display panel, thereby increasing the brightness of the display panel.
  • the display panel provided by the present disclosure may include a display area A and a peripheral area B surrounding the display area A.
  • the display panel may include a driving backplane 100, a first insulating layer 200, and a light emitting device layer stacked in sequence, wherein the driving backplane 100 may include a driving circuit layer 110 and a first emitter electrode layer 130 stacked in sequence.
  • the driving circuit layer 110 may be formed with a plurality of transistors and storage capacitors, and the transistors and the storage capacitors may be electrically connected to form a driving circuit.
  • the transistors may include N-type transistors and P-type transistors; in this way, the driving circuit layer 110 may be prepared with reference to the CMOS process.
  • the driving circuit layer 110 may include a silicon-based semiconductor layer, an insulating layer, and a lead layer.
  • the silicon-based semiconductor layer may be formed with the channel region, source and drain of the drive transistor, and the lead layer may form the lead layer of the drive transistor.
  • the gate and the insulating layer can isolate the channel region and gate of the driving transistor.
  • a storage capacitor may be formed between the silicon-based semiconductor layer and the lead layer, or a storage capacitor may be formed between lead layers of different layers.
  • the lead layer may also form a connecting lead connecting the storage capacitor and the thin film transistor, so that the transistor and the storage capacitor are connected to form a driving circuit.
  • the lead layer farthest from the silicon-based semiconductor layer can be used as the metal wiring layer 111 of the drive circuit layer, and the metal wiring layer 111 can be used as the signal input channel or signal output channel of the drive circuit layer 110, and The other lead layers of the driving circuit layer are electrically connected.
  • the metal wiring layer 111 may also be directly electrically connected to the silicon-based semiconductor layer.
  • a third insulating layer 112 may be provided between the lead layer 114 closest to the metal wiring layer 111 and the metal wiring layer 111.
  • a third insulating layer may be provided between the lead layer farthest from the silicon-based semiconductor layer (ie, the metal wiring layer 111) and the lead layer 114 that is next farthest from the silicon-based semiconductor layer. 112.
  • a first via hole may be formed on the third insulating layer 112, and the first via hole exposes at least part of the lead layer 114 closest to the metal wiring layer 111.
  • a first metal connector 113 may be provided in the first via hole to electrically connect the lead layer 114 closest to the metal wiring layer 111 and the metal wiring layer 111.
  • the third insulating layer 112 may use organic or inorganic insulating materials.
  • the third insulating layer 112 may be made of silicon oxide, silicon nitride, silicon oxynitride, aluminum nitride, aluminum oxide, silicon glass, or other inorganic insulating materials.
  • the material of the first metal connecting member 113 may be metal materials such as titanium, tungsten, copper, etc.
  • the third insulating layer 112 and the first metal connecting member 113 can be formed by the following method: the lead layer 114 (closest to the metal wiring layer) that is far from the silicon-based semiconductor layer after the driving circuit layer is formed After the lead layer 114 of 111), a layer of FSG (Fluorinated Silicate Glass) layer is formed on the surface of the lead layer 114 away from the silicon-based semiconductor layer, and then a first via is formed on the FSG layer; The first via hole is filled with metal tungsten, and then a first metal connection member 113 composed of metal tungsten is formed through a CMP (Chemical Mechanical Polishing) process.
  • FSG Fluorinated Silicate Glass
  • the thickness of the third insulating layer 112 may be 8-12 microns, so that there is a larger distance between the metal wiring layer 111 and the other lead layers of the driving circuit layer 110 and the silicon-based semiconductor layer of the driving circuit layer 110 Therefore, the influence of the electrical signal on the metal wiring layer 111 on the various devices of the driving circuit layer 110 is reduced, and the stability of the operation of the driving circuit layer 110 is improved.
  • the driving backplane 100 may also be provided with a second insulating layer 120 and a second metal connection member penetrating the second insulating layer 120. 121.
  • the second metal connection member 121 connects the metal wiring layer 111 and the first emitter electrode layer 130.
  • the second insulating layer 120 may use organic or inorganic insulating materials.
  • the second insulating layer 120 may be made of silicon oxide, silicon nitride, silicon oxynitride, aluminum nitride, aluminum oxide, silicon glass, or other inorganic insulating materials.
  • a second via hole 122 (filled by the second metal connection member 121 in FIG. 14) may be formed on the second insulating layer 120, and the second via hole exposes at least a part of the metal wiring layer 111.
  • the second insulating layer 120 may also be processed by a CMP process to provide a planarized surface for the first emitter electrode layer 130, improve the flatness of the first main reflective electrode 131, and thereby improve the reflection of the first main reflective electrode 131 Effect.
  • the second metal connection member 121 may be embedded in the second via hole 122 to connect the metal wiring layer 111 and the first main reflective electrode 131.
  • the material of the second metal connecting member 121 may be a metal material such as titanium, tungsten, copper, etc.
  • the second insulating layer 120 and the second metal connector 121 may be formed by the following method: forming a layer of USG (undoped silicon) on the surface of the metal wiring layer 111 away from the driving circuit layer 110 Glass, Undoped Silicate Glass) layer, and then a second via is formed on the USG layer; the second via 122 is filled with metal tungsten, and then a second metal connection made of metal tungsten is formed by a CMP (Chemical Mechanical Polishing) process 121, and a planarized second insulating layer 120 is formed.
  • USG undoped silicon
  • CMP Chemical Mechanical Polishing
  • the diameter of the second via hole 122 may be 0.140 ⁇ 0.324 ⁇ m, as long as it can effectively fill the conductive material of the second metal connector 121 and meet the impedance requirement of the second metal connector 121 of the display panel.
  • the thickness of the second insulating layer 120 may be 6-10 microns, so that there is a larger distance between the first emitter electrode layer 130 and the metal wiring layer 111, and the electrical current on the first main reflective electrode 131 is reduced. Signal interference to the metal wiring layer 111.
  • the first emitter electrode layer 130 is disposed on the surface of the second insulating layer 120 away from the driving circuit layer 110, and it may be one or more layers of conductive materials.
  • the first emission electrode layer 130 may have good light reflection ability to improve the display brightness of the display panel.
  • the first emitter electrode layer 130 may include an aluminum metal layer with good conductivity and high reflectivity, and protective layers may also be provided on both sides of the aluminum metal layer.
  • the first emitter electrode layer 130 may include a third titanium metal layer, a second aluminum metal layer, and a titanium nitride layer sequentially stacked on the surface of the second insulating layer 120, wherein the thickness of the third titanium metal layer may be 80%.
  • the thickness of the second aluminum metal layer can be 700-900 angstroms, and the thickness of the titanium nitride layer can be 80-120 angstroms.
  • the first emission electrode layer 130 may include a plurality of first main reflective electrodes 131, and each of the first main reflective electrodes 131 may be electrically connected to the metal wiring layer 111 through a corresponding second metal connector 121.
  • the minimum distance between any point on one first main reflective electrode 131 and any point on the other first main reflective electrode 131 Is the distance d2 between adjacent first main reflective electrodes 131.
  • the distance d2 between adjacent first main reflective electrodes 131 can be minimized to increase the coverage area of each first main reflective electrode 131, especially to increase the area of the first main reflective electrode 131 in the display area A. Area coverage. In this way, the reflection effect of the first emission electrode layer 130 in the display area A can be improved, and the brightness of the display panel can be improved.
  • the distance d2 between adjacent first main reflective electrodes 131 can be determined according to the precision of the manufacturing process; under the premise of meeting the feasibility of the process and the controllable cost, it can be within the allowable range of the process. A smaller distance d2 between the first main reflective electrodes 131 is used inside. Optionally, the distance d2 between two adjacent first main reflective electrodes 131 is 0.1-0.3 micrometers.
  • the distance d2 between adjacent first main reflective electrodes 131 can be determined according to the size of the first main reflective electrode 131 to ensure that the first main reflective electrode 131 has a high area coverage. Rate, improve the brightness of the display panel.
  • the distance d2 between two adjacent first main reflective electrodes 131 is the second distance; the minimum value of the distance between any point of the edge of the first main reflective electrode 131 and the center of the first main reflective electrode 131 is The second size value; the second distance is within the range of 7% to 10% of the second size value.
  • the first emitter electrode layer 130 can be prepared in a fab using a semiconductor process to ensure that there is a small distance d2 between adjacent first main reflective electrodes 131, so as to avoid the limitation of the panel manufacturer on the manufacturing accuracy.
  • the first emitter electrode layer 130 may be prepared by the following method: forming a first reflective electrode material layer on the surface of the second insulating layer 120 away from the driving circuit layer 110, and then applying the first reflective electrode material The layer undergoes a patterning operation to form the first emitter electrode layer 130.
  • any one of the first main reflective electrodes 131 may be electrically connected to the metal wiring layer 111 through a plurality of second metal connectors 121 to ensure a stable electrical connection between the first main reflective electrode 131 and the metal wiring layer 111 sex.
  • any one of the first main reflective electrodes 131 is electrically connected to the metal wiring layer 111 through two second metal connectors 121.
  • the shape of the first main reflective electrode 131 may be a circle, a square, a triangle, a hexagon, or other shapes.
  • the first main reflective electrode 131 may be a centrally symmetrical hexagonal electrode.
  • the first main reflective electrode 131 is a symmetrical hexagonal electrode, and the first main reflective electrode 131 is connected to the metal wiring layer through two second metal connectors 121. 111 is electrically connected, and the orthographic projection of the two second metal connectors 121 on the first main reflective electrode 131 is close to the top corner of the first main reflective electrode 131.
  • the second main reflective electrode 311 is a symmetrical hexagonal electrode, and the orthographic projection of the two second metal connectors 121 on the second main reflective electrode 311 is close to the vertex of the vertex of the second main reflective electrode 311 .
  • the uneven surface of the second main reflective electrode 311 that may be caused by the second metal connecting member 121 is located at the top corner of the second main reflective electrode 311, which can improve the uniformity of light emitted by the light emitting device.
  • the orthographic projection of the second metal connector 121 on the second main reflective electrode 311 is close to the vertex of the apex of the second main reflective electrode 311 means that the second metal connector 121 is on the second main reflective electrode 311
  • the distance between the orthographic projection of the second main reflective electrode 311 and the vertex of one vertex of the second main reflective electrode 311 is not greater than the distance between the vertex of the other vertex of the second main reflective electrode 311.
  • the peripheral area B may include a binding area D
  • the first auxiliary reflective electrode 132 includes a fifth auxiliary reflective electrode 1325 provided in the binding area D
  • the fifth auxiliary reflective electrode 1325 is electrically connected to the metal wiring layer 111.
  • the first insulating layer 200 is formed with a binding hole 201, and the binding hole 201 exposes at least a part of the surface area of the fifth auxiliary reflective electrode 1325.
  • the fifth auxiliary reflective electrode 1325 serves as a bonding pad of the display panel and can be used as a signal input and output channel.
  • the pattern and size of the fifth auxiliary reflective electrode 1325 are the same as the pattern and size of the first main reflective electrode 131 to improve the uniformity of etching when the first emitter electrode layer 130 is formed by etching.
  • the first insulating layer 200 is provided on the surface of the first emitter electrode layer 130 away from the driving circuit layer 110, and it may be an organic insulating material or an inorganic insulating material.
  • the first insulating layer 200 may be made of silicon oxide, silicon nitride, silicon oxynitride, aluminum nitride, aluminum oxide, or other transparent insulating materials.
  • the surface of the first insulating layer 200 away from the driving circuit layer 110 may be a flattened surface, so as to improve the flatness of the second main reflective electrode 311, thereby improving the light emitting effect of the light emitting device.
  • the material of the first insulating layer 200 may be silicon oxide.
  • the first insulating layer 200 may have high light transmittance. In this way, part of the light emitted by the light-emitting device that cannot be emitted from the display panel can be irradiated to the first main reflective electrode 131, and be reflected by the first main reflective electrode 131 and then emitted from the display panel, thereby improving the display brightness of the display panel. .
  • the light transmittance of the first insulating layer 200 is not less than 70%.
  • the light transmittance of the first insulating layer 200 is not less than 80%.
  • the thickness of the first insulating layer 200 may be less than 1 micron, for example, less than 2000 angstroms, so as to ensure the light transmittance of the first insulating layer 200. In an embodiment of the present disclosure, the thickness of the first insulating layer 200 may be 300-2000 angstroms. Furthermore, the thickness of the first insulating layer 200 may be 300-400 angstroms.
  • the first insulating layer 200 may also be provided with a plurality of connection vias 202.
  • each connection via 202 is arranged in a one-to-one correspondence with each first main reflective electrode 131 and each second main reflective electrode 311, wherein each connection via 202 exposes each first main reflective electrode 131 in a one-to-one correspondence. Part of the area. In this way, each first main reflective electrode 131 and each second main reflective electrode 311 can be electrically connected in a one-to-one correspondence through each connection via 202.
  • the diameter of the connecting via 202 is 0.2 to 0.4 micron, to avoid that the diameter of the connecting via 202 is too small and the material of the second main reflective electrode 311 cannot be effectively filled, and it is also avoided that the diameter of the connecting via 202 is too large to cause the first The area of the uneven portion of the two main reflective electrodes 311 is too large.
  • the diameter of the connecting via 202 is 0.20-0.25 microns.
  • the second emission electrode layer 310 may include a plurality of second main reflection electrodes 311, and each second main reflection electrode 311 may be electrically connected to each first main reflection electrode 131 in a one-to-one correspondence.
  • the second main reflective electrode 311 may serve as a pixel electrode of the light emitting device.
  • the size and pattern of each second main reflective electrode 311 are completely the same. In this way, the etching uniformity when forming each second main reflective electrode 311 by etching can be ensured, and the etching of the second main reflective electrode 311 can be improved. Accuracy.
  • the second emitter electrode layer 310 may use a metal material, so that the second emitter electrode layer 310 has reflectivity.
  • the second emitter electrode layer 310 includes a first titanium metal layer, a first aluminum metal layer, a second titanium metal layer, and a molybdenum metal layer sequentially stacked on the surface of the first insulating layer 200 away from the driving circuit layer 110; wherein , The thickness of the first titanium metal layer is 80-120 angstroms, the thickness of the first aluminum metal layer is 400-500 angstroms, the thickness of the second titanium metal layer is 40-60 angstroms, and the thickness of the molybdenum metal layer is 40-60 angstroms .
  • the distance d3 between adjacent second main reflective electrodes 311 can be minimized to increase the coverage area of each second main reflective electrode 311 and the size of each second main reflective electrode 311.
  • the area in particular, increases the area coverage of the second main reflective electrode 311 in the display area A; in this way, the light-emitting area of the light-emitting device can be increased, thereby increasing the light-emitting brightness of the display panel, and preparing a high-brightness display panel.
  • the minimum value of the distance between any point on one second main reflective electrode 311 and any point on the other second main reflective electrode 311 is adjacent The distance d3 between the second main reflective electrodes 311.
  • the distance d3 between adjacent second main reflective electrodes 311 can be determined according to the precision of the preparation process; under the premise of satisfying the feasibility of the process, a smaller distance can be used within the allowable range of the process.
  • the distance d3 between two adjacent second main reflective electrodes is 0.1-1.0 micrometers.
  • the distance d3 between two adjacent second main reflective electrodes is 0.6-1.0 micrometers.
  • the distance d3 between adjacent second main reflective electrodes 311 can be determined according to the size of the second main reflective electrode 311, so as to ensure that the second main reflective electrode 311 has a high area coverage. Rate, improve the aperture ratio and brightness of the display panel.
  • the minimum value of the distance between any point of the edge of the second main reflection electrode 311 and the center of the second main reflection electrode 311 is the first size value; the distance d3 between two adjacent second main reflection electrodes 311 Is the third distance; the third distance is within the range of 30% to 50% of the first size value.
  • the orthographic projection of the center of the second main reflective electrode 311 on the first emitting electrode layer 130 coincides with the center of the corresponding first main reflective electrode 131; The best reflection effect of the main reflective electrode 131.
  • the orthographic projection of the second main reflective electrode 311 on the first emitting electrode layer 130 is located in the corresponding first main reflective electrode 131.
  • the distance between the second main reflective electrode 311 on the edge of the orthographic projection of the first emitting electrode layer 130 and the corresponding edge of the first main reflective electrode 131 is a first distance.
  • the display panel can be made to have a suitable first distance, so that the preparation accuracy and reflection effect of the first main reflection electrode 131, the preparation accuracy and reflection effect of the second main reflection electrode 311, the total reflection effect of the display area A, etc. Achieve balance.
  • the minimum distance between any point on the edge of the orthographic projection of the first emitter electrode layer 130 and the second main reflective electrode 311 and any point on the edge of the corresponding first main reflective electrode 131 is the first A distance.
  • the first distance may be zero; in this way, the orthographic projection of the second main reflective electrode 311 on the first emitting electrode layer 130 coincides with the corresponding second main reflective electrode 311.
  • the first distance can be determined according to parameters such as the accuracy of the preparation process, so as to avoid the first distance from being too large.
  • the distance between the second main reflective electrode 311 at the edge of the orthographic projection of the first emitter electrode layer 130 and the corresponding edge of the first main reflective electrode 131 is 0.2-0.5 micrometers.
  • the first distance may be determined according to the size of the second main reflective electrode 311.
  • the distance between the second main reflective electrode 311 at the edge of the orthographic projection of the first emitter electrode layer 130 and the corresponding edge of the first main reflective electrode 311 is a first distance;
  • the minimum value of the distance between any point of the edge and the center of the second main reflective electrode 311 is the first size value; the first distance is in the range of 13% to 17% of the first size value.
  • the pattern of the second main reflective electrode 311 is hexagonal.
  • the second main reflective electrode 311 is a hexagon with a center symmetry, and the second main reflective electrode 311 includes two first side walls 3111 disposed opposite to each other, The four second side walls 3112 connected by the side wall 3111 have the same length. Among them, the four second side walls 3112 form a first vertex 3113 and a second vertex 3114 that are disposed oppositely.
  • the distance between the two first side walls 3111 is 3.8-4.3 microns, and the distance between the first vertex and the second vertex is 4.8-5.4 microns.
  • the first main reflective electrode 131 is also a symmetrical hexagon, and the six side walls of the first main reflective electrode 131 are parallel to the six side walls of the second main reflective electrode 311 in a one-to-one correspondence.
  • the orthographic projection of the second main reflecting electrode 311 on the first emitting electrode layer 130 is located in the corresponding first main reflecting electrode 131, and the second main reflecting electrode 311 is in the center of the orthographic projection of the first emitting electrode layer 130 and corresponding The centers of the first main reflective electrodes 131 coincide.
  • the second emitter electrode layer 310 may be prepared in a panel factory.
  • the second emitter electrode layer 310 can be prepared by the following method: a second reflective electrode material layer is formed on the surface of the first insulating layer 200 away from the base substrate, and the second reflective electrode material layer covers each connection via 202 to connect with each other.
  • the first main reflective electrodes 131 are electrically connected; the second reflective electrode material layer is patterned to form the second emitter electrode layer 310.
  • the orthographic projection of each connection via 202 on the second emitter electrode layer 310 is located in the corresponding second main reflective electrode 311.
  • the second main reflective electrode 311 is electrically connected to the first main reflective electrode 131 through the corresponding connection via 202, and there is no need to specially make a metal member connecting the first main reflective electrode 131 and the second main reflective electrode 311, which can simplify the display panel.
  • the preparation process reduces the preparation cost.
  • the second emitter electrode layer 310 may be prepared by the following method:
  • an anti-reflection layer 3101 and a first photoresist layer 3102 are sequentially formed on the side of the first insulating layer 200 away from the driving circuit layer 110.
  • the anti-reflective layer 3101 and the first photoresist layer 3102 are exposed and developed to remove the anti-reflective layer 3101 and the first photoresist layer 3102 where the second emitter electrode layer 310 is to be formed.
  • the orthographic projection of an emitter electrode layer 130 may be complementary to the orthographic projection of the second emitter electrode layer 310 on the first emitter electrode layer 130.
  • a conductive material is deposited on the side of the anti-reflective layer 3101 and the first photoresist layer 3102 away from the driving circuit layer 110 to form a second reflective electrode material layer 3103; part of the conductive material is deposited on the remaining The first photoresist layer 3102 is away from the surface of the driving circuit layer 110, and part of the conductive material is deposited in the gap between the remaining anti-reflection layer 3101 and the first photoresist layer 3102.
  • the first photoresist layer 3102 is stripped to realize the stripping of the conductive material deposited on the remaining first photoresist layer 3102, and the patterning operation of the second reflective electrode material layer 3103 is realized.
  • the second emitter electrode layer 310 is obtained.
  • a second photoresist layer 3104 is formed on the side of the remaining anti-reflection layer 3101 and the second emitter electrode layer 310 away from the driving circuit layer 110;
  • the second photoresist layer 3104 and the remaining anti-reflection layer 3101 are exposed and developed to remove the second photoresist layer 3104 and the remaining anti-reflection layer except for the binding area D. 3101.
  • the fifth auxiliary reflective electrode 1325 of the binding area D is covered and protected by the anti-reflection layer 3101 and the second photoresist layer 3104, and the anti-reflection layer 3101 and the second photoresist layer 3101 in the display area A and other positions are covered and protected.
  • the photoresist layer 3104 is removed.
  • the anti-reflective layer 3101 is formed first and then the first photoresist layer 3102 is formed.
  • the anti-reflective layer 3101 can reduce the reflection of light during exposure, thereby improving the accuracy of exposure and achieving improved second
  • the purpose of the precision of the preparation of the emitter electrode layer 310 The preparation accuracy of the second emitter electrode layer 310 is improved, which facilitates the reduction of the distance between the second main reflective electrodes 311.
  • the orthographic projection of the connection via 202 on the second emitter electrode layer 310 is located at the edge of the corresponding second main reflective electrode 311; preferably, The orthographic projection of the connection via 202 on the second emitter electrode layer 310 is located at the top corner of the corresponding second main reflective electrode 311.
  • the second main reflective electrode 311 is a hexagon, and the orthographic projection of the connection via 202 on the second emitter electrode layer 310 is located in the hexagon and located at one of the top corners.
  • the second main reflective electrode 311 produces an uneven surface due to the connection of the via 202, which will change the light-emitting angle and uniformity of the light at this position; the uneven surface is at the edge of the second main reflective electrode 311, which can make this position The effect of the change in luminescence is minimal, and the overall luminous effect of the light-emitting device is ensured.
  • the orthographic projection of the connection via 202 on the second emitter electrode layer 310 is located in the corresponding second main reflective electrode 311, and is connected to the second main reflective electrode 311.
  • the distance d4 between the edges of the two main reflective electrodes 311 is not less than the first threshold N.
  • the orthographic projection of the connecting via 202 on the second emitter electrode layer 310, and the distance d4 from the edge of the corresponding second main reflective electrode 311, refers to the orthographic projection of the connecting via 202 on the second emitter electrode layer 310.
  • the first threshold is between 0.13 times and 1.3 times the distance d3 between two adjacent second main reflective electrodes.
  • the orthographic projection of the connecting via 202 on the second emitter electrode layer 310 is located in the corresponding second main reflective electrode 311; the orthographic projection of the connecting via 202 on the second emitter electrode layer 310 is The minimum value of the distance between any point and any point on the edge of the corresponding second main reflective electrode 311 is not less than the first threshold N. That is, the distance between the orthographic projection of the connection via 202 on the second emitter electrode layer 310 and the edge of the corresponding second main reflective electrode 311 is not less than the first threshold N.
  • any second main reflective electrode 311 may include a closed restricted area, and the minimum distance between any point on the edge of the restricted area and any point on the edge of the second main reflective electrode 311 is equal to the first Threshold N; the orthographic projection of the connection via 202 on the second main reflective electrode 311 is completely located in the limited area of the second main reflective electrode 311.
  • the first threshold value N may also be determined according to the alignment accuracy of the second reflective electrode material layer 3103 during the patterning operation.
  • the first threshold N is made equal to the alignment accuracy. In this way, it is ensured that the orthographic projection of the connection via 202 on the second emitter electrode layer 310 is located in the corresponding second main reflective electrode 311, and the conductive material in the connection via 202 is prevented from being etched to cause the second main reflective electrode.
  • the increase in resistance between the 311 and the first main reflective electrode 131 or the failure of the open circuit can improve the yield of the display panel and expand the process window during the preparation of the second emitter electrode layer 310.
  • the first threshold N is 100-300 nanometers.
  • the first threshold N is 100 to 200 nanometers.
  • the first threshold value N may also be determined according to the size of the second main reflective electrode 311.
  • the minimum value of the distance from the center of the second main reflective electrode 311 is the first size value; the first threshold N is 5% of the first size value ⁇ 8% range.
  • the orthographic projection of the connecting via 202 on the second main reflective electrode 311 can be as close as possible to the edge of the second main reflective electrode 311, achieving a balance between ensuring the light-emitting effect of the light-emitting device and improving the yield of the display panel.
  • the distance between the center of the orthographic projection of the connection via 202 on the second emitter electrode layer 310 and the corresponding second main reflective electrode 311 is not greater than the distance from other edges; the connection via 202 is at The distance between the center of the orthographic projection on the second emitting electrode layer 310 and the specific edge is the sixth distance; the distance between the specific edge and the center of the second main reflective electrode 311 is the seventh distance; the sixth distance is the seventh distance Of 8% to 14%.
  • the specific edge is the edge of each edge of the second main reflective electrode 311 that is closest to the orthographic projection of the second main reflective electrode 311 on which the via 202 is connected.
  • connection via 202 can be made as close as possible to the edge of the second main reflective electrode 311 under the premise of reducing the connection failure caused by the etching alignment offset of the connection via 202, so as to ensure the light emission effect of the light emitting device. And improve the balance between the yield of the display panel.
  • the orthographic projection of the connecting via 202 on the second emitter electrode layer 310 is located in the corresponding second main reflective electrode 311, and the distance d4 from the edge of the corresponding second main reflective electrode 311 is equal to the first threshold N .
  • the second main reflective electrode 311 has at least adjacent first and second edges; any point of the orthographic projection of the via hole 202 on the second emitter electrode layer 310 is connected to the corresponding second main reflective electrode 311 The minimum value of the distance between any points of the first edge is equal to the first threshold N; and any point of the orthographic projection of the via hole 202 on the second emitter electrode layer 310 is connected to the corresponding second main reflective electrode 311 The minimum value of the distance between any points of the second edge is equal to the first threshold N.
  • the second main reflective electrode 311 has at least adjacent first and second edges, and the distance between the orthographic projection of the connecting via 202 on the second emitter electrode layer 310 and the first edge is equal to the first threshold N.
  • the distance between the orthographic projection of the hole 202 on the second emitter electrode layer 310 and the two edges is equal to the first threshold N. That is, referring to FIG. 4, the distance d4 in FIG. 4 may be equal to the first threshold N.
  • the orthographic projection of the connecting via 202 on the second main reflective electrode 311 can be made as close as possible to the edge of the second main reflective electrode 311, so that the uneven surface of the second main reflective electrode 311 is as close as possible to the second main reflective electrode 311. Edge, thereby reducing the influence of the connection via 202 on the uniformity of light emission of the light-emitting device.
  • the orthographic projection of the second metal connector 121 electrically connected to the second main reflective electrode 311 on the second emitter electrode layer 310 is located in the second main reflective electrode 311 and is connected to the connecting via 202 in the second emitter.
  • the orthographic projections of the electrode layer 310 do not completely overlap. In this way, it is possible to avoid poor contact between the first main reflective electrode 131 and the second main reflective electrode 311 caused by the alignment offset during the preparation of the first main reflective electrode 131, and to ensure that the first main reflective electrode 131 can completely cover the second metal.
  • the connecting member 121 further ensures that the second metal connecting member 121 can be electrically connected to the second main reflecting electrode 311 through the first main reflecting electrode 131; not only that, it can also prevent the uneven surface of the second metal connecting member 121 from being connected to each other.
  • the influence of the via 202 improves the connection strength of the joint surface of the second main reflective electrode 311 and the first main reflective electrode 131 in the connection via 202 and reduces the contact resistance.
  • the minimum distance between any point of the orthographic projection of the connecting via 202 on the second emitter electrode layer 310 and any point on the edge of the corresponding second main reflective electrode 311 is equal to the fourth distance (d4 );
  • the distance between any point of the orthographic projection of the second metal connector 121 on the second emitter electrode layer 310 and any point on the edge of the second main reflective electrode 311 electrically connected to the second metal connector 121 The minimum value is equal to the fifth distance; as shown in Figure 16, the fifth distance is less than the fourth distance.
  • the orthographic projection of the second metal connector 121 on the second emitter electrode layer 310 can also be close to the edge of the second main reflective electrode 311, avoiding the occurrence of the second metal connector 121 in the middle of the second main reflective electrode 311.
  • the uneven surface ensures the light-emitting effect of the light-emitting device.
  • the orthographic projection of the second metal connection member 121 on the second emitter electrode layer 310 is located in the second main reflective electrode 311 electrically connected to the second metal connection member 121;
  • the minimum value of the distance between any point of the orthographic projection on the electrode layer 310 and any point on the edge of the second main reflective electrode 311 electrically connected to the second metal connecting member 121 is not greater than the second threshold; Less than the first threshold N. It can be understood that the second threshold is not less than zero.
  • the orthographic projection of the second metal connector 121 on the second emitter electrode layer 310 can also be close to the edge of the second main reflective electrode 311, avoiding the occurrence of the second metal connector 121 in the middle of the second main reflective electrode 311.
  • the uneven surface ensures the light-emitting effect of the light-emitting device.
  • the orthographic projection of the second main reflective electrode 311 on the driving circuit layer 110 is a symmetrical hexagon, and the three adjacent second main reflective electrodes 311 have the same distance from each other, so that The second main reflective electrodes 311 are arranged in a honeycomb shape.
  • Each second main reflective electrode 311 is formed with a plurality of second main reflective electrode rows along the row direction M. In this way, the arrangement density of the second main reflective electrode can be improved, and the display effect of the display panel can also be improved with the help of the pixel borrowing algorithm.
  • the orthographic projection of each connection via 202 on the respective second main reflective electrode 311 is located on the same straight line, so that each second main reflective electrode 311 is connected to each other.
  • the holes 202 are located on the same straight line.
  • the orthographic projection position of the second metal connector 121 electrically connected to the second main reflection electrode 311 on the second main reflection electrode 311 is in the two second main reflection electrodes 311 adjacently arranged in the second main reflection electrode row It has a symmetrical relationship, for example, it may have an axisymmetrical relationship or a centrosymmetrical relationship.
  • the second metal connectors 121 electrically connected to the two second main reflective electrodes 311 that are spaced apart from each other are located on the same straight line along the row direction M;
  • the second metal connector 121 electrically connected to the reflective electrode 311 is not located on the same straight line along the row direction M.
  • the second main reflective electrode 311 is symmetrically hexagonal, and each second main reflective electrode 311 is arranged in a honeycomb shape; each second main reflective electrode 311 is formed with a plurality of second main reflective electrode rows along the row direction M.
  • Any one of the second main reflective electrodes 311 includes two opposite first side walls 3111 and four second side walls 3112 connected to the two first side walls 3111.
  • the two first side walls 3111 are both perpendicular to the row.
  • the direction is M, and the lengths of the four second side walls 3112 are the same.
  • the four second side walls 3112 enclose a first vertex 3113 and a second vertex 3114 that are arranged oppositely.
  • any point of the orthographic projection of the connecting via 202 on the corresponding second main reflective electrode 311 is connected to the second side of any one of the two second side walls 3112 of the first vertex 3113 of the second main reflective electrode 311
  • the minimum value of the distance between any points on the wall 3112 is equal to the first threshold N.
  • the distance between the orthographic projection of the connecting via 202 on the corresponding second main reflective electrode 311 and the two second side walls 3112 of the first vertex 3113 is the first threshold N.
  • the orthographic projection positions of the connecting vias 202 on the corresponding second main reflective electrodes 311 are arranged in the same arrangement in the two adjacent second main reflective electrodes of the second main reflective electrode row.
  • the orthographic projection position of the second metal connector 121 electrically connected to the second main reflective electrode 311 on the second main reflective electrode 311 is located on two adjacent second main reflective electrode rows. There is a symmetrical relationship in the reflective electrode.
  • the orthographic projection position of the second metal connector 121 electrically connected to the second main reflective electrode 311 on the second main reflective electrode 311 is located on two adjacent second main reflective electrode rows.
  • the reflective electrode has a center-symmetric relationship.
  • the orthographic projection of the second metal connection member 121 on the second emitter electrode layer 310 is located in the second main reflective electrode 311 electrically connected to the second metal connection member 121, and is or The distance of the apex of the second apex angle 3114 is greater than the distance to the apex of the other apex angle of the second main reflective electrode 311. That is, the orthographic projection of the second metal connector 121 on the second emitter electrode layer 310 is close to the first vertex 3113 or the second vertex 3114 of the second main reflective electrode 311 electrically connected to the second metal connector 121.
  • a second metal connecting member 121 electrically connected to the second main reflective electrode 311 is connected to the second main reflective electrode.
  • the orthographic projection on the 311, the distance from the apex of the first vertex 3113 of the second main reflective electrode 311 is greater than the distance from the vertex of the other vertex of the second main reflective electrode 311; the other second main reflective electrode 311
  • the orthographic projection of the electrically connected second metal connector 121 on the second main reflective electrode 311 is greater than the distance from the apex of the second apex angle 3114 of the second main reflective electrode 311 to the second main reflective electrode 311 The distance between the vertices of other vertex angles.
  • the second metal connectors 121 electrically connected to the two second main reflective electrodes 311 separated by one second main reflective electrode 311 are all located close to the first vertex 3113 or close to the first corner 3113.
  • Two apex corners 3114 are provided, and the second metal connecting members 121 electrically connected to two adjacent second main reflective electrodes 311 are respectively close to the first apex corner 3113 and the second apex corner 3114.
  • the peripheral area B includes the sensing area C.
  • a sensing device may be formed in the sensing area C. The sensing device is used to simulate and test the working conditions of the light emitting device in the display area A, and adjust the driving of the light emitting device according to the simulation result, so that the light emission of the light emitting device is more accurate .
  • the first auxiliary reflective electrode 132 includes a plurality of third auxiliary reflective electrodes 1323 located in the sensing area, and the third auxiliary reflective electrode 1323 is electrically connected to the metal wiring layer 111; the pattern of the third auxiliary reflective electrode 1323 is the same as that of the first main reflective electrode 131
  • the second auxiliary reflective electrode 312 includes a plurality of fourth auxiliary reflective electrodes 3124 located in the sensing area C, and each fourth auxiliary reflective electrode 3124 is electrically connected to each third auxiliary reflective electrode 1323 in a one-to-one correspondence; fourth The pattern of the auxiliary reflective electrode 3124 is the same as the pattern of the second main reflective electrode 311; the organic light emitting layer 320 and the common electrode layer 330 cover the sensing region C.
  • the second main reflective electrode 311, the organic light emitting layer 320 and the common electrode layer 330 form a light emitting device in the display area A;
  • the fourth auxiliary reflective electrode 3124, the organic light emitting layer 320 and the common electrode layer 330 form a sensing device in the sensing area C.
  • the device, the light emitting device and the sensing device are electrically connected to the metal wiring layer 111 through the first main reflective electrode 131 and the third auxiliary reflective electrode 1323, respectively, and the pattern of the third auxiliary reflective electrode 1323 is the same as that of the first main reflective electrode 131.
  • the peripheral area B may also include a cathode lap area E; the first emitter electrode layer 130 may also include a cathode lap area E.
  • the sixth auxiliary reflective electrode 1326 is electrically connected to the metal wiring layer 111; the sixth auxiliary reflective electrode 1326 can be directly or indirectly electrically connected to the common electrode layer 330 to provide a common voltage to the common electrode layer 330;
  • the sixth auxiliary reflective electrode 1326 is electrically connected to the metal wiring layer 111 and the common electrode layer 330, avoiding problems such as too large slope and too large sinking depth of the common electrode layer 330 when the common electrode layer 330 is directly connected to the metal wiring layer 111, etc.
  • the manufacturing difficulty of the display panel is reduced, and the stability of the electrical connection between the metal wiring layer 111 and the common electrode layer 330 is improved.
  • the pattern and size of the sixth auxiliary reflective electrode 1326 are the same as the pattern and size of the first main reflective electrode 131 to improve the uniformity of etching when the first emitter electrode layer 130 is formed by etching.
  • the first insulating layer 200 is also provided with a plurality of connection vias 202 in the cathode overlap area E, and each connection via 202 in the cathode overlap area E and each sixth auxiliary reflective electrode 1326 One-to-one correspondence arrangement; wherein, the connection via 202 may expose a part of the corresponding sixth auxiliary reflective electrode 1326.
  • the second auxiliary reflective electrode 312 may further include a plurality of seventh auxiliary reflective electrodes 3127 located in the cathode lap area E, and each seventh auxiliary reflective electrode 3127 is arranged in a one-to-one correspondence with each connection via 202 and each sixth auxiliary reflective electrode 1326 , So that any seventh auxiliary reflective electrode 3127 is electrically connected to the corresponding sixth auxiliary reflective electrode 1326 through the corresponding connection via 202.
  • the common electrode layer 330 is electrically connected to each seventh auxiliary reflective electrode 3127, so that the common electrode layer 330 is electrically connected to the metal wiring layer 111 through the seventh auxiliary reflective electrode 3127 and the sixth auxiliary reflective electrode 1326.
  • the pattern and size of the seventh auxiliary reflective electrode 3127 are the same as the pattern and size of the second main reflective electrode 311 to improve the uniformity of etching when the second emitter electrode layer 310 is formed by etching.
  • the peripheral area B may also include a first auxiliary area F located between the display area A and the sensing area C, which is located in the sensing area.
  • the first auxiliary reflective electrode 132 may also be located in the first auxiliary region F, the second auxiliary region G, and the third auxiliary region H.
  • the pattern and size of the first auxiliary reflective electrode 132 in the first auxiliary region F, the second auxiliary region G, and the third auxiliary region H may be the same as the pattern and size of the first main reflective electrode 131, so as to ensure the passage of The uniformity of the etching at the time when the first emitter electrode layer 130 is formed by etching improves the preparation accuracy of the first emitter electrode layer 130.
  • the second auxiliary reflective electrode 312 may also be located in the first auxiliary region F, the second auxiliary region G, and the third auxiliary region H.
  • the pattern and size of the second auxiliary reflective electrode 312 located in the first auxiliary region F, the second auxiliary region G, and the third auxiliary region H are the same as the pattern and size of the second main reflective electrode 311, so as to ensure the passage of The uniformity of the etching at the time when the second emitter electrode layer 310 is formed by etching improves the preparation accuracy of the second emitter electrode layer 310.
  • the distance between two adjacent first auxiliary reflective electrodes 132 is equal to the distance between adjacent first main reflective electrodes 131; between two adjacent second auxiliary reflective electrodes 312
  • the spacing of is equal to the spacing between two adjacent second main reflective electrodes 311.
  • the distance between two adjacent first auxiliary reflective electrodes 132 is greater than the distance between adjacent first main reflective electrodes 131; between two adjacent second auxiliary reflective electrodes 312 The distance therebetween is greater than the distance between two adjacent second main reflective electrodes 311.
  • the spacing between the first auxiliary reflective electrodes 132 is greater than the spacing of the first main reflective electrodes, so the area coverage of the first auxiliary reflective electrodes 132 can be reduced, thereby reducing the reflectivity of the peripheral area, and reducing the impact of ambient light on the display area. A's display effect. Therefore, the display panel provided by the present disclosure can achieve a better balance between improving the etching uniformity when forming the first emitter electrode layer 130 and reducing the influence of ambient light on the display effect.
  • the spacing between the second auxiliary reflective electrodes 312 is greater than the spacing of the second main reflective electrodes 311, so the area coverage of the second auxiliary reflective electrodes 312 can be reduced, thereby reducing the reflectivity of the peripheral area B and reducing the impact of ambient light.
  • the light emitting device layer may further include a pixel definition layer 340; the pixel definition layer 340 is provided on the surface of the first insulating layer 200 away from the driving backplane 100, and Located in the gap between the second main reflective electrodes 311; the orthographic projection of the pixel defining layer 340 on the first emitting electrode layer 130 partially overlaps the first main reflective electrode 131. Since the pixel definition layer 340 is located in the gap between the second main reflective electrodes 311, the pixel definition layer 340 does not block the second main reflective electrodes 311, so that the display panel has a larger aperture ratio and higher brightness.
  • the pixel defining layer 340 is located between the second main reflective electrodes 311 and covers a part of the first main reflective electrode 131, which can reduce light crosstalk between adjacent light-emitting devices and improve the contrast of the display panel.
  • the organic light emitting layer 320 is provided on the side of the second emitting electrode layer 310 away from the driving circuit layer 110 and covers the sensing area C and the display area A to ensure the electrical environment of the sensing device and the light emitting device Uniformity improves the accuracy of the simulation test result of the sensing area C.
  • the materials of each sub-film layer of the organic light-emitting layer 320 may be sequentially vapor-deposited through an open mask, so that each sub-film layer is an integral film layer.
  • the organic light emitting layer 320 may be a white light emitting layer, so that the light emitting device can emit white light.
  • the organic light-emitting layer 320 may include a red light-emitting material layer, a green light-emitting material layer, and a blue light-emitting material layer that are stacked.
  • the common electrode layer 330 is disposed on the surface of the organic light emitting layer 320 away from the driving circuit layer 110, and it can be made of a transparent conductive material, for example, a magnesium-silver alloy or the like.
  • the common electrode layer 330 may also cover the cathode lap area E, so as to cover the surface of the seventh auxiliary reflective electrode 3127 in the cathode lap area E away from the driving circuit layer 110, so as to realize the passage of the seventh auxiliary reflective electrode 3127.
  • the auxiliary reflective electrode 3127 is electrically connected to the metal wiring layer 111.
  • the display panel provided by the present disclosure may further include a thin film encapsulation layer (TFE) 410.
  • TFE thin film encapsulation layer
  • the thin film encapsulation layer 410 may cover the side of the common electrode layer 330 away from the driving circuit layer 110 and cover the common electrode layer 330. Side to prevent water and oxygen from invading the organic light emitting layer 320.
  • the display panel provided by the present disclosure may further include a capping layer 420 (CPL, capping layer), and the capping layer 420 is disposed on the common electrode layer 330 away from the driving circuit layer. 110 surface to improve the efficiency of light extraction, thereby increasing the brightness of the display panel.
  • CPL capping layer
  • the display panel provided by the present disclosure may further include a color film layer 430, and the color film unit may be disposed on the side of the thin film encapsulation layer 410 away from the driving circuit layer 110.
  • the color film layer 430 may include color film units of different colors, and each color film unit located in the display area A may be arranged in a one-to-one correspondence with each second main reflective electrode 311 of the display area A, so that the light emitted by the light emitting device passes through the corresponding color film unit.
  • the film unit emits, and the emitted light is filtered by the color film unit to present colors.
  • the display panel may further include a black matrix layer 440.
  • the black matrix layer 440 is disposed on the side of the thin film packaging layer 410 away from the driving circuit layer 110 and has a plurality of light-transmitting windows. Each light-transmitting window located in the display area A and each second main reflective electrode 311 of the display area A are arranged in a one-to-one correspondence, and are covered by the color film units located in the display area A in a one-to-one correspondence.
  • the black matrix layer 440 may not be provided with a light-transmitting window, so that each sensing device in the sensing area C is covered by the black matrix layer 440; in this way, even if the sensing device emits light, the emitted light cannot be emitted.
  • a protective layer 450 may be further provided on the side of the color filter layer 430 and the black matrix layer 440 away from the driving circuit layer 110.
  • the material and structure of the protective layer 450 are the same as the thin film encapsulation layer 410.
  • the display panel provided by the present disclosure may further include a cover plate 460, which is located on the other side of the display panel relative to the driving circuit layer 110, so that the light-emitting device layer and other film layers are located on the cover plate 460 and the driving circuit. Between the layers 110 to further protect the organic light-emitting layer 320 and improve the life and stability of the organic light-emitting layer 320.
  • the cover plate 460 may be a glass cover plate 460.
  • the embodiments of the present disclosure also provide a display device, which includes any one of the display panels described in the above display panel embodiments.
  • the display device may be AR glasses, VR glasses or other types of display devices. Since the display device has any one of the display panels described in the above-mentioned display panel embodiments, it has the same beneficial effects, which will not be repeated in this disclosure.

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Abstract

本公开提供了一种显示面板，属于显示技术领域。显示面板包括依次层叠的驱动背板、第一绝缘层和发光器件层。驱动背板包括第一反射电极层；第一反射电极层包括位于显示区的第一主反射电极和位于外围区的第一辅助反射电极；发光器件层包括第二反射电极层，第二反射电极层包括位于显示区的第二主反射电极和位于外围区的第二辅助反射电极；各个第二主反射电极和各个第一主反射电极一一对应的电连接；且第二主反射电极在第一反射电极层的正投影，位于对应的第一主反射电极内。该显示面板可以提高显示面板的显示效果。

Description

显示面板和显示装置 技术领域
本公开涉及显示技术领域，尤其涉及一种显示面板和显示装置。
背景技术
相比于DMD(数字微镜器件)和LCOS(硅基液晶)微显示器，硅基OLED微显示器拥有非常优秀的显示特性。OLED亮度高、色彩丰富、驱动电压低、响应速度快、功耗低，具有非常优秀的用户体验；且OLED是一种全固态型器件，抗震性能好，工作温度范围宽(-40℃～85℃)；其属于自发光器件，不需要背光源，视角范围大，厚度薄，有利于减小系统体积，尤其适用于近眼显示系统。
在近眼显示系统中，显示屏幕的亮度是非常关键的指标。举例而言，在AR(增强现实)产品中，微显示器可以为高亮度屏幕，以便根据工作环境和场景的不同调整自身亮度，使得显示亮度与人眼的感官体验相匹配。
所述背景技术部分公开的上述信息仅用于加强对本公开的背景的理解，因此它可以包括不构成对本领域普通技术人员已知的现有技术的信息。
发明内容
本公开的目的在于提供一种显示面板和显示装置，用于提高显示亮度。
为实现上述发明目的，本公开采用如下技术方案：
根据本公开的第一个方面，提供一种显示面板，所述显示面板包括显示区和围绕所述显示区的外围区，所述显示面板包括：
驱动背板，包括层叠设置的驱动电路层和第一反射电极层；所述第一反射电极层包括位于所述显示区的多个第一主反射电极和位于所述外围区的多个第一辅助反射电极，各个所述第一主反射电极与所述驱动电路层电连接；
第一绝缘层，设于所述第一反射电极层远离所述驱动电路层的一侧；
发光器件层，设于所述第一绝缘层远离所述驱动电路层的一侧，包括依次层叠设置于所述第一绝缘层远离所述驱动电路层一侧的第二反射电极层、有机发光层和公共电极层；其中，所述第二反射电极层包括位于所述显示区的多个第二主反射电极和位于所述外围区的多个第二辅助反射电极；各个所述第二主反射电极和各个所述第一主反射电极 一一对应的电连接；且所述第二主反射电极在所述第一反射电极层的正投影，位于对应的所述第一主反射电极内。
在本公开的一种示例性实施例中，所述外围区包括有感测区；
所述第一辅助反射电极包括位于所述感测区的多个第三辅助反射电极，所述第三辅助反射电极与所述驱动电路层电连接；所述第三辅助反射电极的图案与所述第一主反射电极的图案相同；
所述第二辅助反射电极包括位于所述感测区的多个第四辅助反射电极，各个所述第四辅助反射电极与各个所述第三辅助反射电极一一对应的电连接；所述第四辅助反射电极的图案与所述第二主反射电极的图案相同；
所述有机发光层和所述公共电极层覆盖所述感测区。
在本公开的一种示例性实施例中，所述第二主反射电极在所述第一反射电极层的正投影的任意一点，与对应的所述第一主反射电极的边缘上的任意一点之间的距离的最小值，为第一距离；
所述第二主反射电极的边缘的任意一点与所述第二主反射电极的中心的距离的最小值为第一尺寸值；
所述第一距离在所述第一尺寸值的13％～17％的范围内。
在本公开的一种示例性实施例中，所述第二主反射电极在所述第一反射电极层的正投影的任意一点，与对应的所述第一主反射电极的边缘上的任意一点之间的距离的最小值，等于0.2～0.5微米。
在本公开的一种示例性实施例中，相邻两个所述第一主反射电极之间的间距为第二距离；
所述第一主反射电极的边缘的任意一点与所述第一主反射电极的中心的距离的最小值为第二尺寸值；
所述第二距离在所述第二尺寸值的7％～10％范围内。
在本公开的一种示例性实施例中，相邻两个所述第一主反射电极之间的间距等于0.1～0.3微米。
在本公开的一种示例性实施例中，所述第二主反射电极的边缘的任意一点，与所述第二主反射电极的中心的距离的最小值为第一尺寸值；
相邻两个所述第二主反射电极之间的间距为第三距离；
所述第三距离在所述第一尺寸值的30％～50％的范围内。
在本公开的一种示例性实施例中，相邻两个所述第二主反射电极之间的间距等于0.6～1.0微米。
在本公开的一种示例性实施例中，所述第二反射电极层包括依次层叠于所述第一绝缘层远离所述驱动电路层的表面的第一钛金属层、第一铝金属层、第二钛金属层和钼金属层；其中，所述第一钛金属层的厚度为80～120埃，所述第一铝金属层的厚度为400～500埃，所述第二钛金属层的厚度为40～60埃，所述钼金属层的厚度为40～60埃。
在本公开的一种示例性实施例中，所述第一反射电极层包括依次层叠于所述驱动电路层一侧的第三钛金属层、第二铝金属层和氮化钛层；其中，所述第三钛金属层的厚度为80～120埃，所述第二铝金属层的厚度为700～900埃，所述氮化钛层的厚度可以为80～120埃。
在本公开的一种示例性实施例中，所述第二主反射电极的中心在所述第一反射电极层上的正投影，与对应的所述第一主反射电极的中心重合。
在本公开的一种示例性实施例中，所述外围区包括绑定区；所述第一反射电极层还包括设于所述绑定区的第五辅助反射电极；所述第五辅助反射电极与所述驱动电路层电连接；
所述第一绝缘层具有绑定孔，所述绑定孔暴露所述第五辅助反射电极的至少部分区域。
在本公开的一种示例性实施例中，所述发光器件层还包括像素定义层；
所述像素定义层设于所述第一绝缘层远离所述驱动背板的表面，且位于所述第二主反射电极之间的间隙中；
所述像素定义层在所述第一反射电极层的正投影，与所述第一主反射电极部分重合。
在本公开的一种示例性实施例中，相邻两个所述第一辅助反射电极之间的间距大于相邻两个所述第一主反射电极之间的间距；相邻两个所述第二辅助反射电极之间的间距大于相邻两个所述第二主反射电极之间的间距。
在本公开的一种示例性实施例中，所述第一绝缘层的透光率不小于70％。
在本公开的一种示例性实施例中，所述驱动电路层与所述第一反射电极层之间设置有第二绝缘层；所述第二绝缘层具有多个第二过孔，各个所述第二过孔内设置有第二金属连接件；
各个所述第一主反射电极通过各自对应的所述第二金属连接件与所述驱动电路层电连接；
所述第一绝缘层具有与各个所述第一主反射电极一一对应的多个连接过孔，任意一个所述连接过孔暴露对应的所述第一主反射电极的部分表面；
各个所述第二主反射电极和各个所述第一主反射电极通过对应的所述连接过孔一一对应的电连接；
其中，所述连接过孔在所述第二反射电极层上的正投影，位于对应的所述第二主反射电极内；所述连接过孔在所述第二反射电极层上的正投影的任意一点，与对应的所述第二主反射电极的边缘的任意一点之间的距离的最小值，不小于第一阈值；所述第一阈值在相邻两个所述第二主反射电极的间距的0.13倍～1.3倍之间。
在本公开的一种示例性实施例中，所述连接过孔在所述第二反射电极层上的正投影的任意一点，与对应的所述第二主反射电极的边缘的任意一点之间的距离的最小值，等于所述第一阈值。
在本公开的一种示例性实施例中，所述第二主反射电极至少存在相邻的第一边缘和第二边缘；所述连接过孔在所述第二反射电极层上的正投影的任意一点，与对应的所述第二主反射电极的第一边缘的任意一点之间的距离的最小值，等于所述第一阈值；且所述连接过孔在所述第二反射电极层上的正投影的任意一点，与对应的所述第二主反射电极的第二边缘的任意一点之间的距离的最小值，等于所述第一阈值。
在本公开的一种示例性实施例中，所述第二主反射电极的边缘的任意一点与所述第二主反射电极的中心的距离的最小值为第一尺寸值；
所述第一阈值在所述第一尺寸值的5％～8％范围内。
在本公开的一种示例性实施例中，所述第二主反射电极所电连接的所述第二金属连接件在所述第二反射电极层的正投影，位于所述第二主反射电极内，且与所述连接过孔在所述第二反射电极层的正投影不完全交叠。
在本公开的一种示例性实施例中，所述连接过孔在所述第二反射电极层上的正投影的任意一点，与对应的所述第二主反射电极的边缘的任意一点之间的距离的最小值，等于第四距离；
所述第二金属连接件在所述第二反射电极层上的正投影的任意一点，与所述第二金属连接件所电连接的第二主反射电极的边缘的任意一点之间的距离的最小值，等于第五距离；
所述第五距离小于所述第四距离。
在本公开的一种示例性实施例中，所述第二金属连接件在所述第二反射电极层上的正投影，位于所述第二金属连接件所电连接的第二主反射电极内；所述第二金属连接件在所述第二反射电极层上的正投影的任意一点，与所述第二金属连接件所电连接的第二主反射电极的边缘的任意一点之间的距离的最小值，不大于第二阈值；所述第二阈值小于所述第一阈值。
在本公开的一种示例性实施例中，所述第二主反射电极在所述驱动电路层上的正投影为中心对称的六边形，且各个所述第二主反射电极呈蜂巢状排布；各个所述第二主反 射电极形成多个沿行方向的第二主反射电极行；
所述第二主反射电极包括相对设置的两个第一边璧，以及与两个所述第一边璧连接的四个第二边璧；两个所述第一边壁均垂直于所述行方向；四个所述第二边璧围成相对设置的第一顶角和第二顶角；
所述连接过孔在对应的所述第二主反射电极上的正投影的任意一点，与该第二主反射电极的第一顶角的两个第二边壁中的任意一个所述第二边壁上的任意一点之间的距离的最小值，均等于所述第一阈值。
在本公开的一种示例性实施例中，一个所述第二主反射电极电连接的所述第二金属连接件在该第二主反射电极上的正投影位置，在所述第二主反射电极行的相邻设置的两个所述第二主反射电极中具有对称关系。
在本公开的一种示例性实施例中，所述连接过孔在对应的所述第二主反射电极上的正投影位置，在所述第二主反射电极行的相邻设置的两个所述第二主反射电极中排布相同。
在本公开的一种示例性实施例中，所述连接过孔的直径为0.2～0.4微米。
根据本公开的第二个方面，提供一种显示装置，包括上述的显示面板。
附图说明
通过参照附图详细描述其示例实施方式，本公开的上述和其它特征及优点将变得更加明显。
图1是本公开一种实施方式的显示面板的剖视结构示意图。
图2是本公开一种实施方式的显示面板的俯视结构示意图。
图3是本公开一种实施方式的第一反射电极、第二反射电极、第二金属连接件和连接过孔的俯视投影示意图。
图4是本公开一种实施方式的第二反射电极和连接过孔的俯视投影示意图。
图5是本公开一种实施方式的第二反射电极和连接过孔的俯视投影示意图。
图6是本公开一种实施方式的形成第一光刻胶层和抗反射层的结构示意图。
图7是本公开一种实施方式的对第一光刻胶层和抗反射层进行图案化的结构示意图。
图8是本公开一种实施方式的形成第二反射电极材料层的结构示意图。
图9是本公开一种实施方式的剥离第一光刻胶层的结构示意图。
图10是本公开一种实施方式的形成第二光刻胶层的结构示意图。
图11是本公开一种实施方式的对第二光刻胶层进行图案化的结构示意图。
图12是本公开一种实施方式的第二反射电极的排布结构示意图。
图13是本公开一种实施方式的第二反射电极的电镜照片图。
图14是本公开一种实施方式的第一反射电极层的结构示意图。
图15是本公开一种实施方式的第二反射电极层的结构示意图。
图16是本公开另一种实施方式的第一反射电极、第二反射电极、第二金属连接件和连接过孔的俯视投影示意图。
具体实施方式
现在将参考附图更全面地描述示例实施例。然而，示例实施例能够以多种形式实施，且不应被理解为限于在此阐述的范例；相反，提供这些实施例使得本公开将更加全面和完整，并将示例实施例的构思全面地传达给本领域的技术人员。所描述的特征、结构或特性可以以任何合适的方式结合在一个或更多实施例中。在下面的描述中，提供许多具体细节从而给出对本公开的实施例的充分理解。
在图中，为了清晰，可能夸大了区域和层的厚度。在图中相同的附图标记表示相同或类似的结构，因而将省略它们的详细描述。
所描述的特征、结构或特性可以以任何合适的方式结合在一个或更多实施例中。在下面的描述中，提供许多具体细节从而给出对本公开的实施例的充分理解。然而，本领域技术人员将意识到，可以实践本公开的技术方案而没有所述特定细节中的一个或更多，或者可以采用其它的方法、组元、材料等。在其它情况下，不详细示出或描述公知结构、材料或者操作以避免模糊本公开的主要技术创意。
当某结构在其它结构“上”时，有可能是指某结构一体形成于其它结构上，或指某结构“直接”设置在其它结构上，或指某结构通过另一结构“间接”设置在其它结构上。
用语“一个”、“一”、“所述”用以表示存在一个或多个要素/组成部分/等；用语“包括”和“具有”用以表示开放式的包括在内的意思并且是指除了列出的要素/组成部分/等之外还可存在另外的要素/组成部分/等。用语“第一”和“第二”等仅作为标记使用，不是对其对象的数量限制。
在本公开中，两个结构的间距，指的是一个结构上的任意一点与另一个结构上的任意一点之间的距离的最小值。
本公开提供一种显示面板，如图1和图2所示，显示面板包括显示区A和围绕显示区A的外围区B，显示面板包括驱动背板100、第一绝缘层200和发光器件层；
如图14所示，驱动背板100包括层叠设置的驱动电路层110和第一发射电极层130；第一发射电极层130包括位于显示区A的多个第一主反射电极131和位于外围区B的多 个第一辅助反射电极132，各个第一主反射电极131与驱动电路层110电连接。第一绝缘层200设于第一发射电极层130远离驱动电路层110的一侧。如图1和图15所示，发光器件层设于第一绝缘层200远离驱动电路层110的一侧，包括依次层叠设置于第一绝缘层200远离驱动电路层一侧的第二发射电极层310、有机发光层320和公共电极层330；其中，第二发射电极层310包括位于显示区A的多个第二主反射电极311和位于外围区B的多个第二辅助反射电极312；各个第二主反射电极311和各个第一主反射电极131一一对应地电连接；且第二主反射电极311在第一发射电极层130的正投影，位于对应的第一主反射电极131内。
本公开提供的显示面板，第一发射电极层130在显示区A和外围区B分别包括第一主反射电极131和第一辅助反射电极132，如此，在通过刻蚀制备第一发射电极层130时无需完全刻蚀外围区B的反射电极材料，可以提高在制备第一发射电极层130时刻蚀的均一性，进而提高第一主反射电极的131刻蚀精度。本公开提供的显示面板，第二发射电极层310在显示区A和外围区B分别包括第二主反射电极311和第二辅助反射电极312，如此，在通过刻蚀制备第二发射电极层310时无需完全刻蚀外围区的反射电极材料，可以提高在制备第二发射电极层310时刻蚀的均一性，进而提高第二主反射电极311的刻蚀精度。本公开提供的显示面板中，第二主反射电极311在第一发射电极层130的正投影，位于对应的第一主反射电极内131。如此，未被第二主反射电极311反射的光线，可以被第一主反射电极131反射以提高显示面板的出光率，进而提高显示面板的亮度。
下面，结合附图对本公开提供的显示面板的结构、原理和效果，做进一步地解释和说明。
参见图1和图2，本公开提供的显示面板可以包括显示区A和围绕显示区A的外围区B。该显示面板可以包括依次层叠的驱动背板100、第一绝缘层200和发光器件层，其中，驱动背板100可以包括依次层叠设置的驱动电路层110和第一发射电极层130。
驱动电路层110可以形成有多个晶体管和存储电容，晶体管和存储电容可以电连接以形成驱动电路。在本公开的一种实施方式中，晶体管可以包括N型晶体管和P型晶体管；如此，可以参照CMOS工艺制备驱动电路层110。举例而言，驱动电路层110可以包括硅基半导体层、绝缘层和引线层，其中，硅基半导体层可以形成有驱动晶体管的沟道区、源极和漏极，引线层可以形成驱动晶体管的栅极，绝缘层可以隔离驱动晶体管的沟道区和栅极。硅基半导体层和引线层可以形成有存储电容，或者不同层的引线层之间可以形成存储电容。引线层还可以形成连接存储电容和薄膜晶体管的连接引线，以使得晶体管和存储电容连接形成驱动电路。
优选地，在多层引线层中，最远离硅基半导体层的引线层可以作为驱动电路层的金属布线层111，金属布线层111可以作为驱动电路层110的信号输入通道或者信号输出通道，与驱动电路层的其他引线层电连接。在某些实施方式中，金属布线层111还可以与硅基半 导体层直接电连接。
在本公开的一种实施方式中，驱动电路层110的多层引线层中，最靠近金属布线层111的引线层114与金属布线层111之间可以设置有第三绝缘层112。换言之，在驱动电路层110的多层引线层中，最远离硅基半导体层的引线层(即金属布线层111)与次远离硅基半导体层的引线层114之间可以设置有第三绝缘层112。第三绝缘层112上可以形成有第一过孔，第一过孔暴露至少部分最靠近金属布线层111的引线层114。第一过孔中可以设置有第一金属连接件113，以使得最靠近金属布线层111的引线层114与金属布线层111之间电连接。
第三绝缘层112可以采用有机或者无机绝缘材料。在本公开的一种实施方式中，第三绝缘层112可以采用氧化硅、氮化硅、氮氧化硅、氮化铝、氧化铝、硅玻璃或者其他无机绝缘材料。第一金属连接件113的材料可以为钛、钨、铜等金属材料。
在本公开的一种实施方式中，可以通过如下方法形成第三绝缘层112和第一金属连接件113：在形成驱动电路层的次远离硅基半导体层的引线层114(最靠近金属布线层111的引线层114)后，在该引线层114远离硅基半导体层的表面形成一层FSG(掺杂氟的硅玻璃，Fluorinated Silicate Glass)层，然后在FSG层上形成第一过孔；在第一过孔中填充金属钨，然后通过CMP(化学机械抛光)工艺形成由金属钨组成的第一金属连接件113。
可选地，第三绝缘层112的厚度可以为8～12微米，以使得金属布线层111与驱动电路层110的其他引线层、驱动电路层110的硅基半导体层之间具有较大的间距，减小金属布线层111上的电信号对驱动电路层110的各个器件的影响，提高驱动电路层110工作的稳定性。
如图1和图14所示，在金属布线层111与第一发射电极层130之间，驱动背板100还可以设置有第二绝缘层120以及贯穿第二绝缘层120的第二金属连接件121，第二金属连接件121连接金属布线层111和第一发射电极层130。
第二绝缘层120可以采用有机或者无机绝缘材料。在本公开的一种实施方式中，第二绝缘层120可以采用氧化硅、氮化硅、氮氧化硅、氮化铝、氧化铝、硅玻璃或者其他无机绝缘材料。第二绝缘层120上可以形成有第二过孔122(图14中被第二金属连接件121填充满)，第二过孔暴露至少部分金属布线层111。可选地，第二绝缘层120还可以经过CMP工艺处理，以便为第一发射电极层130提供平坦化表面，提高第一主反射电极131的平坦度，进而提高第一主反射电极131的反射效果。
第二金属连接件121可以嵌入第二过孔122中，以使得金属布线层111和第一主反射电极131连接。第二金属连接件121的材料可以为钛、钨、铜等金属材料。在本公开的一种实施方式中，可以通过如下方法形成第二绝缘层120和第二金属连接件121：在金属布线层111远离驱动电路层110的表面形成一层USG(未掺杂的硅玻璃，Undoped Silicate Glass)层，然后在USG层上形成第二过孔；在第二过孔122中填充金属钨，然后通过CMP (化学机械抛光)工艺形成由金属钨组成的第二金属连接件121，以及形成平坦化的第二绝缘层120。
可选的，第二过孔122的直径可以为0.140～0.324微米，以能够有效填充第二金属连接件121的导电材料并满足显示面板对其第二金属连接件121的阻抗要求为准。
可选地，第二绝缘层120的厚度可以为6～10微米，以使得第一发射电极层130与金属布线层111之间具有较大的间距，减小第一主反射电极131上的电信号对金属布线层111的干扰。
第一发射电极层130设于第二绝缘层120远离驱动电路层110的表面，其可以为一层或者多层导电材料。第一发射电极层130可以具有良好的光线反射能力，以提高显示面板的显示亮度。可选地，第一发射电极层130可以包括具有良好导电性能且具有高反射率的铝金属层，在铝金属层的两侧还可以分别设置保护层。优选地，第一发射电极层130可以包括依次层叠于第二绝缘层120表面的第三钛金属层、第二铝金属层和氮化钛层，其中，第三钛金属层的厚度可以为80～120埃，第二铝金属层的厚度可以为700～900埃，氮化钛层的厚度可以为80～120埃。
第一发射电极层130可以包括多个第一主反射电极131，各个第一主反射电极131可以各自通过对应的第二金属连接件121与金属布线层111电连接。
如图3所示，相邻设置的两个第一主反射电极131中，一个第一主反射电极131上的任意一点与另一个第一主反射电极131上的任意一点之间距离的最小值，为相邻的第一主反射电极131之间的间距d2。可选地，可以尽量减小相邻的第一主反射电极131之间的间距d2，以提高各个第一主反射电极131的覆盖面积，尤其是提高显示区A中第一主反射电极131的面积覆盖率。如此，可以提高第一发射电极层130在显示区A的反射效果，提高显示面板的亮度。
在本公开的一种实施方式中，可以根据制备工艺的精度确定相邻的第一主反射电极131之间的间距d2；在满足工艺可行性和成本可控的前提下，可以在工艺允许范围内采用更小的第一主反射电极131之间的间距d2。可选地，相邻两个第一主反射电极131之间的间距d2为0.1～0.3微米。
在本公开的另一种实施方式中，可以根据第一主反射电极131的尺寸确定相邻的第一主反射电极131之间的间距d2，以保证第一主反射电极131具有高的面积覆盖率，提高显示面板的亮度。可选地，相邻两个第一主反射电极131之间的间距d2为第二距离；第一主反射电极131的边缘的任意一点与第一主反射电极131的中心的距离的最小值为第二尺寸值；第二距离在第二尺寸值的7％～10％范围内。
优选地，可以在晶圆厂采用半导体工艺制备第一发射电极层130，以保证相邻第一主反射电极131之间具有小的间距d2，避免面板厂在制备精度上的制约。
在本公开的一种实施方式中，可以通过如下方法制备第一发射电极层130：在第二绝 缘层120远离驱动电路层110的表面形成第一反射电极材料层，然后对第一反射电极材料层进行图案化操作，以形成第一发射电极层130。
可选地，任意一个第一主反射电极131，可以通过多个第二金属连接件121与金属布线层111电连接，以保证第一主反射电极131与金属布线层111之间电连接的稳定性。优选地，如图3所示，任意一个第一主反射电极131通过两个第二金属连接件121与金属布线层111电连接。
第一主反射电极131的形状可以为圆形、正方形、三角形、六边形或者其他形状。可选地，如图3所示，第一主反射电极131可以为中心对称的六边形电极。
在本公开的一种实施方式中，如图3所示，第一主反射电极131为中心对称的六边形电极，第一主反射电极131通过两个第二金属连接件121与金属布线层111电连接，两个第二金属连接件121在第一主反射电极131上的正投影靠近第一主反射电极131的顶角处。优选地，第二主反射电极311为中心对称的六边形电极，两个第二金属连接件121在第二主反射电极311上的正投影靠近第二主反射电极311的顶角的顶点处。如此，第二金属连接件121可能导致的第二主反射电极311的表面不平整部分位于第二主反射电极311的顶角处，可以提高发光器件出光的均匀性。其中，第二金属连接件121在第二主反射电极311上的正投影靠近第二主反射电极311的顶角的顶点处指的是，第二金属连接件121在第二主反射电极311上的正投影与第二主反射电极311的其中一个顶角的顶点之间的距离，不大于与第二主反射电极311的其他顶角的顶点之间的距离。
在本公开的一种实施方式中，如图1和图14所示，外围区B可以包括绑定区D，第一辅助反射电极132包括设于绑定区D的第五辅助反射电极1325；第五辅助反射电极1325与金属布线层111电连接。第一绝缘层200形成有绑定孔201，绑定孔201暴露第五辅助反射电极1325的至少部分表面区域。如此，第五辅助反射电极1325作为显示面板的绑定焊盘，可以作为信号输入和输出通道。可选地，第五辅助反射电极1325的图案和尺寸与第一主反射电极131的图案和尺寸相同，以提高通过刻蚀形成第一发射电极层130时刻蚀的均一性。
如图1所示，第一绝缘层200设于第一发射电极层130远离驱动电路层110的表面，其可以为有机绝缘材料或者无机绝缘材料。可选地，第一绝缘层200可以采用氧化硅、氮化硅、氮氧化硅、氮化铝、氧化铝或者其他透明绝缘材料。第一绝缘层200远离驱动电路层110的表面可以为平坦化表面，以便提高第二主反射电极311的平整度，进而提高发光器件的出光效果。在本公开的一种实施方式中，第一绝缘层200的材料可以为氧化硅。
第一绝缘层200可以具有高的光透光率。如此，发光器件所发出的光线中，未能从显示面板出射的部分光线可以照射至第一主反射电极131，并被第一主反射电极131反射后从显示面板出射，提高显示面板的显示亮度。可选地，第一绝缘层200的光透光率不小于70％。优选地，第一绝缘层200的光透光率不小于80％。第一绝缘层200的厚度可以小于 1微米，例如可以小于2000埃，以保证第一绝缘层200的透光率。在本公开的一种实施方式中，第一绝缘层200的厚度可以为300～2000埃。更进一步地，第一绝缘层200的厚度可以为300～400埃。
可选地，如图1、图3所示，第一绝缘层200还可以设置有多个连接过孔202。在显示区A，各个连接过孔202与各个第一主反射电极131、各个第二主反射电极311一一对应设置，其中，各个连接过孔202一一对应地暴露各个第一主反射电极131的部分区域。如此，各个第一主反射电极131和各个第二主反射电极311可以通过各个连接过孔202一一对应地电连接。
可选的，连接过孔202的直径为0.2～0.4微米，避免连接过孔202直径过小而导致不能有效填充第二主反射电极311的材料，也避免连接过孔202直径过大而导致第二主反射电极311的不平整部分面积过大。在本公开的一种实施方式中，连接过孔202的直径为0.20～0.25微米。
如图1和图3所示，第二发射电极层310可以包括多个第二主反射电极311，各个第二主反射电极311可以与各个第一主反射电极131一一对应地电连接。在显示区A，第二主反射电极311可以作为发光器件的像素电极。可选地，各个第二主反射电极311的尺寸和图案完全相同，如此，可以保证在刻蚀形成各个第二主反射电极311时的刻蚀均一性，提高第二主反射电极311的刻蚀精准度。
第二发射电极层310可以采用金属材料，以使得第二发射电极层310具有反射能力。可选地，第二发射电极层310包括依次层叠于第一绝缘层200远离驱动电路层110的表面的第一钛金属层、第一铝金属层、第二钛金属层和钼金属层；其中，第一钛金属层的厚度为80～120埃，第一铝金属层的厚度为400～500埃，第二钛金属层的厚度为40～60埃，钼金属层的厚度为40～60埃。
可选地，如图3所示，可以尽量减小相邻的第二主反射电极311之间的间距d3，以提高各个第二主反射电极311的覆盖面积和各个第二主反射电极311的面积，尤其是提高显示区A中第二主反射电极311的面积覆盖率；如此可以提高发光器件的发光面积，进而提高显示面板的发光亮度，制备出高亮度显示面板。其中，相邻设置的两个第二主反射电极311中，一个第二主反射电极311上的任意一点与另一个第二主反射电极311上的任意一点之间距离的最小值，为相邻的第二主反射电极311之间的间距d3。
在本公开的一种实施方式中，可以根据制备工艺的精度确定相邻的第二主反射电极311之间的间距d3；在满足工艺可行性等前提下，可以在工艺允许范围内采用更小的第二主反射电极311之间的间距d3。可选地，相邻两个第二主反射电极之间的间距d3为0.1～1.0微米。优选地，相邻两个第二主反射电极之间的间距d3为0.6～1.0微米。
在本公开的另一种实施方式中，可以根据第二主反射电极311的尺寸确定相邻的第二主反射电极311之间的间距d3，以保证第二主反射电极311具有高的面积覆盖率，提高显 示面板的开口率和亮度。可选地，第二主反射电极311的边缘的任意一点与第二主反射电极311的中心的距离的最小值为第一尺寸值；相邻两个第二主反射电极311之间的间距d3为第三距离；第三距离在第一尺寸值的30％～50％的范围内。
可选地，如图3所示，第二主反射电极311的中心在第一发射电极层130上的正投影，与对应的第一主反射电极131的中心重合；如此，可以保证各个第一主反射电极131的最佳反射效果。
可选地，如图3所示，第二主反射电极311在第一发射电极层130的正投影，位于对应的第一主反射电极131内。第二主反射电极311在第一发射电极层130的正投影的边缘，与对应的第一主反射电极131的边缘之间的间距为第一距离。可以使得显示面板具有适宜的第一距离，以便在第一主反射电极131的制备精度及其反射效果、第二主反射电极311的制备精度及其反射效果、显示区A的总反射效果等方面达成平衡。其中，第二主反射电极311在第一发射电极层130的正投影的边缘上的任意一点，与对应的第一主反射电极131的边缘上的任意一点之间的距离的最小值，为第一距离。
在本公开的一种实施方式中，第一距离可以为零；如此，第二主反射电极311在第一发射电极层130的正投影，与对应的第二主反射电极311重合。
在本公开的另一种实施方式中，可以根据制备工艺的精度等参数确定第一距离，避免第一距离过大。可选地，第二主反射电极311在第一发射电极层130的正投影的边缘，与对应的第一主反射电极131的边缘之间的间距为0.2～0.5微米。
在本公开的另一种实施方式中，可以根据第二主反射电极311的尺寸确定第一距离。可选地，第二主反射电极311在第一发射电极层130的正投影的边缘，与对应的第一主反射电极311的边缘之间的间距为第一距离；第二主反射电极311的边缘的任意一点与第二主反射电极311的中心的距离的最小值为第一尺寸值；第一距离在第一尺寸值的13％～17％的范围内。
可选地，如图3所示，第二主反射电极311的图案为六边形。优选地，如图4和图5所示，第二主反射电极311为中心对称的六边形，第二主反射电极311包括相对设置的两个第一边壁3111，以及与两个第一边壁3111连接的四个第二边壁3112，四个第二边壁3112的长度相同。其中，四个第二边壁3112形成相对设置的第一顶角3113和第二顶角3114。进一步优选地，第二主反射电极311中，两个第一边壁3111之间的间距为3.8～4.3微米，第一顶点和第二顶点之间的距离为4.8～5.4微米。
优选地，第一主反射电极131也为中心对称的六边形，且第一主反射电极131的六个边壁与第二主反射电极311的六个边壁一一对应平行。第二主反射电极311在第一发射电极层130的正投影，位于对应的第一主反射电极131内，且第二主反射电极311在第一发射电极层130的正投影的中心与对应的第一主反射电极131的中心重合。
在本公开的一种实施方式中，可以在面板厂制备第二发射电极层310。可选地，可以 通过如下方法制备第二发射电极层310：在第一绝缘层200远离衬底基板的表面形成第二反射电极材料层，第二反射电极材料层覆盖各个连接过孔202以与各个第一主反射电极131电连接；对第二反射电极材料层进行图案化操作，以形成第二发射电极层310。其中，在显示区A，各个连接过孔202在第二发射电极层310上的正投影，位于各自对应的第二主反射电极311内。如此，第二主反射电极311通过对应的连接过孔202与第一主反射电极131电连接，无需专门制作连接第一主反射电极131和第二主反射电极311的金属构件，可以简化显示面板的制备工序，降低制备成本。
进一步地，为了提高第二发射电极层310的制备精度，进而减小第二主反射电极311之间的间距，可以通过如下方法制备第二发射电极层310：
如图6所示，在第一绝缘层200远离驱动电路层110的一侧依次形成抗反射层3101和第一光刻胶层3102。
然后，如图7所示，对抗反射层3101和第一光刻胶层3102进行曝光和显影，以去除待形成第二发射电极层310处的抗反射层3101和第一光刻胶层3102，例如去除第二主反射电极311和第二辅助反射电极312对应位置处的抗反射层3101和第一光刻胶层3102；换言之，残留的抗反射层3101和第一光刻胶层3102在第一发射电极层130上的正投影，可以与第二发射电极层310在第一发射电极层130上的正投影互补。
再然后，如图8所示，在抗反射层3101和第一光刻胶层3102远离驱动电路层110的一侧沉积导电材料，形成第二反射电极材料层3103；部分导电材料沉积于残留的第一光刻胶层3102远离驱动电路层110的表面，部分导电材料沉积于残留的抗反射层3101和第一光刻胶层3102之间的间隙中。
再然后，如图9所示，剥离第一光刻胶层3102，实现剥离沉积于残留的第一光刻胶层3102上的导电材料，实现对第二反射电极材料层3103的图案化操作，获得第二发射电极层310。
再然后，如图10所示，在残留的抗反射层3101和第二发射电极层310远离驱动电路层110的一侧形成第二光刻胶层3104；
再然后，如图11所示，对第二光刻胶层3104和残留的抗反射层3101进行曝光和显影，以去除绑定区D以外的第二光刻胶层3104和残留的抗反射层3101。如此，在曝光和显影后，绑定区D的第五辅助反射电极1325被抗反射层3101和第二光刻胶层3104覆盖和保护，显示区A等位置处的抗反射层3101和第二光刻胶层3104被去除。
如此，在制备第二发射电极层310时，先形成抗反射层3101再形成第一光刻胶层3102，抗反射层3101可以减少曝光时光线的反射，进而提高曝光的精度，达成提高第二发射电极层310的制备精度的目的。第二发射电极层310的制备精度提高，便于减小第二主反射电极311之间的间距。
在本公开的一种实施方式中，如图12和图13所示，连接过孔202在第二发射电极层 310上的正投影，位于对应的第二主反射电极311的边缘；优选地，连接过孔202在第二发射电极层310上的正投影，位于对应的第二主反射电极311的顶角处。举例而言，第二主反射电极311为六边形，连接过孔202在第二发射电极层310上的正投影位于该六边形内且位于其中一个顶角处。第二主反射电极311因连接过孔202而产生不平整表面，将会使得该位置的发光角度、发光均一性发生变化；该不平整表面处于第二主反射电极311的边缘，可以使得该位置的发光变化所产生的影响最小，保证发光器件整体的发光效果。
在本公开的另一种实施方式中，如图4和图5所示，连接过孔202在第二发射电极层310上的正投影，位于对应的第二主反射电极311内，且与第二主反射电极311的边缘的间距d4不小于第一阈值N。其中，连接过孔202在第二发射电极层310上的正投影，与对应的第二主反射电极311的边缘的间距d4，指的是连接过孔202在第二发射电极层310上的正投影上的任意一点，与对应的第二主反射电极311的边缘上的任意一点之间的最小值。如此，在对第二反射电极材料层3103进行图案化操作时，即便发生了对准偏移，也更不容易刻蚀位于连接过孔202内的第二反射电极材料层3103，降低了第二主反射电极311与第一主反射电极131之间电阻增大或者断路的不良的风险，能够提高显示面板的良率，并扩大第二发射电极层310制备时的工艺窗口。优选地，所述第一阈值在相邻两个所述第二主反射电极的间距d3的0.13倍～1.3倍之间。
如此，在显示区A，连接过孔202在第二发射电极层310上的正投影，位于对应的第二主反射电极311内；连接过孔202在第二发射电极层310上的正投影的任意一点，与对应的第二主反射电极311的边缘的任意一点之间的距离的最小值，不小于第一阈值N。即，连接过孔202在第二发射电极层310上的正投影与对应的第二主反射电极311的边缘之间的间距不小于第一阈值N。换言之，任意一个第二主反射电极311内可以包括一封闭的限定区域，该限定区域的边缘的任意一点与第二主反射电极311的边缘的任意一点之间的距离的最小值均等于第一阈值N；连接过孔202在第二主反射电极311上的正投影，完全位于该第二主反射电极311的限定区域内。
在本公开的一种实施方式中，还可以根据第二反射电极材料层3103进行图案化操作时的对准精度，确定第一阈值N。优选地，使得第一阈值N等于对准精度。如此，保证了连接过孔202在第二发射电极层310上的正投影位于对应的第二主反射电极311内，避免了连接过孔202中的导电材料被刻蚀而导致第二主反射电极311与第一主反射电极131之间电阻增大或者断路的不良，能够提高显示面板的良率，并扩大第二发射电极层310制备时的工艺窗口。可选的，第一阈值N为100～300纳米。优选地，第一阈值N为100～200纳米。
在本公开的另一种实施方式中，还可以根据第二主反射电极311的尺寸确定第一阈值N。可选地，第二主反射电极311的边缘上的任意一点，与第二主反射电极311的中心的距离的最小值，为第一尺寸值；第一阈值N在第一尺寸值的5％～8％范围内。如此，可以 使得连接过孔202在第二主反射电极311上的正投影尽量靠近第二主反射电极311的边缘，实现在保证发光器件的发光效果和提高显示面板的良率之间的平衡。
可选地，连接过孔202在第二发射电极层310上的正投影的中心，与对应的第二主反射电极311的一特定边缘的距离不大于与其他边缘的距离；连接过孔202在第二发射电极层310上的正投影的中心，与该特定边缘的距离为第六距离；特定边缘与该第二主反射电极311的中心的距离为第七距离；第六距离为第七距离的8％～14％。其中，特定边缘为的第二主反射电极311的各个边缘中，与连接过孔202在的第二主反射电极311上的正投影最近的边缘。如此，可以在降低连接过孔202因刻蚀对准偏移而导致的连接不良的前提下，使得连接过孔202尽量贴近的第二主反射电极311的边缘，实现在保证发光器件的发光效果和提高显示面板的良率之间的平衡。
优选地，连接过孔202在第二发射电极层310上的正投影，位于对应的第二主反射电极311内，且与对应的第二主反射电极311的边缘的间距d4等于第一阈值N。进一步地，第二主反射电极311至少存在相邻的第一边缘和第二边缘；连接过孔202在第二发射电极层310上的正投影的任意一点，与对应的第二主反射电极311的第一边缘的任意一点之间的距离的最小值，等于第一阈值N；且连接过孔202在第二发射电极层310上的正投影的任意一点，与对应的第二主反射电极311的第二边缘的任意一点之间的距离的最小值，等于第一阈值N。即，第二主反射电极311至少存在相邻的第一边缘和第二边缘，连接过孔202在第二发射电极层310上的正投影与第一边缘的间距等于第一阈值N，连接过孔202在第二发射电极层310上的正投影与二边缘的间距等于第一阈值N。即，参见图4，图4中的间距d4可以等于第一阈值N。如此，可以使得连接过孔202在第二主反射电极311上的正投影尽量靠近第二主反射电极311的边缘，使得第二主反射电极311的不平整表面尽量靠近第二主反射电极311的边缘，进而降低连接过孔202对发光器件的发光均一性的影响。
可选地，第二主反射电极311所电连接的第二金属连接件121在第二发射电极层310的正投影，位于第二主反射电极311内，且与连接过孔202在第二发射电极层310的正投影不完全交叠。如此，可以避免制备第一主反射电极131时的对准偏移造成第一主反射电极131与第二主反射电极311之间的接触不良，确保第一主反射电极131能够完全覆盖第二金属连接件121，进而保证第二金属连接件121能够通过第一主反射电极131与第二主反射电极311电连接；不仅如此，还能够避免第二金属连接件121可能产生的不平整表面对连接过孔202的影响，提高连接过孔202内的第二主反射电极311与第一主反射电极131的结合面的连接强度并降低接触阻。
优选地，连接过孔202在第二发射电极层310上的正投影的任意一点，与对应的第二主反射电极311的边缘的任意一点之间的距离的最小值，等于第四距离(d4)；第二金属连接件121在第二发射电极层310上的正投影的任意一点，与第二金属连接件121所电连 接的第二主反射电极311的边缘的任意一点之间的距离的最小值，等于第五距离；如图16所示，第五距离小于第四距离。如此，可以使得第二金属连接件121在第二发射电极层310上的正投影也靠近第二主反射电极311的边缘，避免第二金属连接件121在第二主反射电极311的中间位置产生不平整表面，进而保证发光器件的发光效果。
优选地，第二金属连接件121在第二发射电极层310上的正投影，位于第二金属连接件121所电连接的第二主反射电极311内；第二金属连接件121在第二发射电极层310上的正投影的任意一点，与第二金属连接件121所电连接的第二主反射电极311的边缘的任意一点之间的距离的最小值，不大于第二阈值；第二阈值小于第一阈值N。可以理解的是，第二阈值不小于0。如此，可以使得第二金属连接件121在第二发射电极层310上的正投影也靠近第二主反射电极311的边缘，避免第二金属连接件121在第二主反射电极311的中间位置产生不平整表面，进而保证发光器件的发光效果。
可选地，如图12所示，第二主反射电极311在驱动电路层110上的正投影为中心对称的六边形，彼此相邻的三个第二主反射电极311彼此间距相同，使得第二主反射电极311呈蜂巢状排布。各个第二主反射电极311形成有多个沿行方向M的第二主反射电极行。如此，既可以提高第二主反射电极的排布密度，还可以借助像素借用算法提高显示面板的显示效果。
可选地，在同一第二主反射电极行中，各个连接过孔202在各自对应的第二主反射电极311上的正投影位于同一直线，使得各个第二主反射电极311所对应的连接过孔202位于同一直线。一个第二主反射电极311电连接的第二金属连接件121在该第二主反射电极311上的正投影位置，在第二主反射电极行相邻设置的两个第二主反射电极311中具有对称关系，例如可以具有轴对称关系或者中心对称关系。举例而言，相互间隔一个第二主反射电极311的的两个第二主反射电极311电连接的第二金属连接件121位于沿行方向M的同一直线；相邻设置的两个第二主反射电极311电连接的第二金属连接件121不位于沿行方向M的同一直线。
在本公开的一种实施方式中，如图12所示，第二主反射电极311为中心对称地六边形，且各个第二主反射电极311呈蜂巢状排布；各个第二主反射电极311形成有多个沿行方向M的第二主反射电极行。任意一个第二主反射电极311包括相对设置的两个第一边壁3111，以及与两个第一边壁3111连接的四个第二边壁3112，两个第一边壁3111均垂直于行方向M，且四个第二边壁3112的长度相同。四个第二边壁3112围成相对设置的第一顶角3113和第二顶角3114。连接过孔202在对应的第二主反射电极311上的正投影的任意一点，与该第二主反射电极311的第一顶角3113的两个第二边壁3112中的任意一个第二边壁3112上的任意一点之间的距离的最小值，均等于所述第一阈值N。换言之，连接过孔202在对应的第二主反射电极311上的正投影与第一顶角3113的两个第二边壁3112之间的间距均为第一阈值N。
优选地，连接过孔202在对应的第二主反射电极311上的正投影位置，在第二主反射电极行的相邻设置的两个第二主反射电极中排布相同。
优选地，一个第二主反射电极311电连接的第二金属连接件121在该第二主反射电极311上的正投影位置，在第二主反射电极行的相邻设置的两个第二主反射电极中具有对称关系。优选地，一个第二主反射电极311电连接的第二金属连接件121在该第二主反射电极311上的正投影位置，在第二主反射电极行的相邻设置的两个第二主反射电极中具有中心对称的关系。
优选地，第二金属连接件121在第二发射电极层310上的正投影，位于与第二金属连接件121电连接的第二主反射电极311内，且与第一顶角3113的顶点或者第二顶角3114的顶点的距离大于与第二主反射电极311的其他顶角的顶点的距离。即，第二金属连接件121在第二发射电极层310上的正投影，靠近第二金属连接件121电连接的第二主反射电极311的第一顶角3113或者第二顶角3114。
举例而言，在同一第二主反射电极行的相邻设置的两个第二主反射电极311中，一个第二主反射电极311电连接的第二金属连接件121在该第二主反射电极311上的正投影，与该第二主反射电极311的第一顶角3113的顶点的距离大于与该第二主反射电极311的其他顶角的顶点的距离；另一个第二主反射电极311电连接的第二金属连接件121在该第二主反射电极311上的正投影，与该第二主反射电极311的第二顶角3114的顶点的距离大于与该第二主反射电极311的其他顶角的顶点的距离。即，在同一第二主反射电极行中，相互间隔一个第二主反射电极311的两个第二主反射电极311电连接的第二金属连接件121均靠近第一顶角3113设置或者靠近第二顶角3114设置，且相邻设置的两个第二主反射电极311电连接的第二金属连接件121分别靠近第一顶角3113和第二顶角3114。如此，可以提高制备第一发射电极层130、第一绝缘层和第二发射电极层310时的工艺稳定性和工艺可行性。
在本公开的一种实施方式中，如图1、图14和图15所示，外围区B包括感测区C。该感测区C内可以形成有感测器件，感测器件用于模拟测试显示区A内的发光器件的工作情况，并根据模拟结果调整对发光器件的驱动，使得发光器件的发光更为精准。第一辅助反射电极132包括位于感测区的多个第三辅助反射电极1323，第三辅助反射电极1323与金属布线层111电连接；第三辅助反射电极1323的图案与第一主反射电极131的图案相同；第二辅助反射电极312包括位于感测区C的多个第四辅助反射电极3124，各个第四辅助反射电极3124与各个第三辅助反射电极1323一一对应的电连接；第四辅助反射电极3124的图案与第二主反射电极311的图案相同；有机发光层320和公共电极层330覆盖感测区C。如此，第二主反射电极311、有机发光层320和公共电极层330在显示区A形成发光器件；第四辅助反射电极3124、有机发光层320和公共电极层330在感测区C形成感测器件，发光器件和感测器件分别通过第一主反射电极131和第三辅助反射电极 1323与金属布线层111电连接，第三辅助反射电极1323的图案与第一主反射电极131的图案相同。如此，可以保证发光器件和感测器件处于相同的电性环境中，使得感测器件的模拟测试结果与发光器件的实际情形更为匹配，提高了感测器件的模拟测试结果的准确性，进而提高对发光器件的调节的准确性。
在本公开的一种实施方式中，如图1、图14和图15所示，外围区B还可以包括阴极搭接区E；第一发射电极层130还可以包括设于阴极搭接区E的第六辅助反射电极1326，第六辅助反射电极1326与金属布线层111电连接；第六辅助反射电极1326可以与公共电极层330直接或者间接电连接，以便向公共电极层330提供公共电压；该第六辅助反射电极1326电连接金属布线层111和公共电极层330，避免了公共电极层330直接与金属布线层111连接时坡度太大、公共电极层330下沉深度过大等问题，可以降低显示面板的制备难度，提高金属布线层111与公共电极层330之间的电连接的稳定性。可选地，第六辅助反射电极1326的图案和尺寸与第一主反射电极131的图案和尺寸相同，以提高通过刻蚀形成第一发射电极层130时刻蚀的均一性。
优选地，如图1所示，第一绝缘层200在阴极搭接区E也设置有多个连接过孔202，阴极搭接区E中的各个连接过孔202与各个第六辅助反射电极1326一一对应设置；其中，连接过孔202可以暴露对应的第六辅助反射电极1326的部分区域。第二辅助反射电极312还可以包括位于阴极搭接区E的多个第七辅助反射电极3127，各个第七辅助反射电极3127与各个连接过孔202、各个第六辅助反射电极1326一一对应设置，使得任意一个第七辅助反射电极3127通过对应的连接过孔202与对应的第六辅助反射电极1326电连接。公共电极层330与各个第七辅助反射电极3127电连接，使得公共电极层330通过第七辅助反射电极3127、第六辅助反射电极1326与金属布线层111电连接。可选地，第七辅助反射电极3127的图案和尺寸与第二主反射电极311的图案和尺寸相同，以提高通过刻蚀形成第二发射电极层310时刻蚀的均一性。
在本公开的一种实施方式中，如图1、图14和图15所示，外围区B还可以包括位于显示区A和感测区C之间的第一辅助区F，位于感测区C和阴极搭接区E之间的第二辅助区G，以及位于阴极搭接区E和绑定区D之间的第三辅助区H。第一辅助反射电极132还可以位于第一辅助区F、第二辅助区G和第三辅助区H。优选地，第一辅助区F、第二辅助区G和第三辅助区H中的第一辅助反射电极132的图案和尺寸可以与第一主反射电极131的图案和尺寸相同，以保证通过刻蚀形成第一发射电极层130时刻蚀的均一性，提高第一发射电极层130的制备精度。第二辅助反射电极312还可以位于第一辅助区F、第二辅助区G和第三辅助区H。优选地，位于第一辅助区F、第二辅助区G和第三辅助区H中的第二辅助反射电极312的图案和尺寸与第二主反射电极311的图案和尺寸相同，以保证通过刻蚀形成第二发射电极层310时刻蚀的均一性，提高第二发射电极层310的制备精度。
在本公开的一种实施方式中，相邻两个第一辅助反射电极132之间的间距等于相邻第一主反射电极131之间的间距；相邻两个第二辅助反射电极312之间的间距等于相邻两个第二主反射电极311之间的间距。如此，可以进一步提高第一发射电极层130的均一性和第二发射电极层310的均一性，进一步提高第一发射电极层130的刻蚀均一性和提高第二发射电极层310的刻蚀均一性。
在本公开的另一种实施方式中，相邻两个第一辅助反射电极132之间的间距大于相邻第一主反射电极131之间的间距；相邻两个第二辅助反射电极312之间的间距大于相邻两个第二主反射电极311之间的间距。第一辅助反射电极132之间的间距大于第一主反射电极的间距，因此可以减小第一辅助反射电极132的面积覆盖率，并进而减小外围区的反射能力，降低环境光线对显示区A的显示效果的影响。因此，本公开提供的显示面板，能够在提高形成第一发射电极层130时的刻蚀均一性和降低环境光线对显示效果的影响之间达成更好地平衡。第二辅助反射电极312之间的间距大于第二主反射电极311的间距，因此可以减小第二辅助反射电极312的面积覆盖率，并进而减小外围区B的反射能力，降低环境光线对显示区A的显示效果的影响。因此，本公开提供的显示面板，能够在提高形成第二发射电极层310时的刻蚀均一性和降低环境光线对显示效果的影响之间达成更好地平衡。
在本公开的一种实施方式中，如图1和图15所示，发光器件层还可以包括像素定义层340；像素定义层340设于第一绝缘层200远离驱动背板100的表面，且位于第二主反射电极311之间的间隙中；像素定义层340在第一发射电极层130的正投影，与第一主反射电极131部分重合。由于像素定义层340位于第二主反射电极311之间的间隙中，因此像素定义层340不会遮挡第二主反射电极311，使得显示面板具有更大的开口率和更高的亮度。像素定义层340位于第二主反射电极311之间，以及覆盖部分第一主反射电极131的一部分，可以减少相邻的发光器件之间的光线串扰，提高显示面板的对比度。
如图1所示，有机发光层320设于第二发射电极层310远离驱动电路层110的一侧，且覆盖感测区C和显示区A，以保证感测器件和发光器件的电性环境均一，提高感测区C的模拟测试结果的准确性。可选地，可以通过开放式掩膜板(Open Mask)依次蒸镀有机发光层320的各个子膜层的材料，使得各个子膜层均为整体膜层。在本公开的一种实施方式中，有机发光层320可以为白色发光层，使得发光器件可以发出白光。举例而言，有机发光层320可以包括有层叠设置的红色发光材料层、绿色发光材料层和蓝色发光材料层。
如图1所示，公共电极层330设于有机发光层320远离驱动电路层110的表面，其可以采用透明导电材料，例如可以采用镁银合金等材料。在本公开的一种实施方式中，公共电极层330还可以覆盖阴极搭接区E，以便覆盖阴极搭接区E内的第七辅助反射电极3127远离驱动电路层110的表面，实现通过第七辅助反射电极3127与金属布线层111电连接。
如图1所示，本公开提供的显示面板还可以包括有薄膜封装层(TFE)410，有薄膜 封装层410可以覆盖公共电极层330远离驱动电路层110的一侧并覆盖公共电极层330的侧边，以避免水氧入侵有机发光层320。
在本公开的一种实施方式中，如图1所示，本公开提供的显示面板还可以包括封盖层420(CPL，capping layer)，封盖层420设于公共电极层330远离驱动电路层110的表面，以提高出光效率，进而提高显示面板的亮度。
在本公开的一种实施方式中，如图1所示，本公开提供的显示面板还可以包括有彩膜层430，彩膜单元可以设置于薄膜封装层410远离驱动电路层110的一侧。彩膜层430可以包括不同颜色的彩膜单元，位于显示区A的各个彩膜单元可以与显示区A的各个第二主反射电极311一一对应设置，使得发光器件发出的光线通过对应的彩膜单元出射，出射的光线经过彩膜单元的滤光而呈现彩色。
进一步的，如图1所示，显示面板还可以包括有黑矩阵层440，黑矩阵层440设于薄膜封装层410远离驱动电路层110的一侧，且具有多个透光窗口。位于显示区A的各个透光窗口与显示区A的各个第二主反射电极311一一对应设置，且被位于显示区A的彩膜单元一一对应地覆盖。在感测区C，黑矩阵层440可以不设置透光窗口，使得感测区C的各个感测器件被黑矩阵层440覆盖；如此，即便感测器件发光，所发出的光线也无法出射。
可选地，如图1所示，彩膜层430和黑矩阵层440远离驱动电路层110的一侧还可以设置有保护层450。优选地，保护层450的材料和结构与薄膜封装层410相同。
如图1所示，本公开提供的显示面板还可以包括盖板460，盖板460位于显示面板相对于驱动电路层110的另一侧，使得发光器件层等膜层位于盖板460和驱动电路层110之间，以便进一步保护有机发光层320，提高有机发光层320的寿命和稳定性。可选地，盖板460可以为玻璃盖板460。
本公开实施方式还提供一种显示装置，该显示装置包括上述显示面板实施方式所描述的任意一种显示面板。该显示装置可以为AR眼镜、VR眼镜或者其他类型的显示装置。由于该显示装置具有上述显示面板实施方式所描述的任意一种显示面板，因此具有相同的有益效果，本公开在此不再赘述。
应可理解的是，本公开不将其应用限制到本说明书提出的部件的详细结构和布置方式。本公开能够具有其他实施方式，并且能够以多种方式实现并且执行。前述变形形式和修改形式落在本公开的范围内。应可理解的是，本说明书公开和限定的本公开延伸到文中和/或附图中提到或明显的两个或两个以上单独特征的所有可替代组合。所有这些不同的组合构成本公开的多个可替代方面。本说明书的实施方式说明了已知用于实现本公开的最佳方式，并且将使本领域技术人员能够利用本公开。

Claims (27)

  1. 一种显示面板，所述显示面板包括显示区和围绕所述显示区的外围区，所述显示面板包括：
    驱动背板，包括层叠设置的驱动电路层和第一反射电极层；所述第一反射电极层包括位于所述显示区的多个第一主反射电极和位于所述外围区的多个第一辅助反射电极，各个所述第一主反射电极与所述驱动电路层电连接；
    第一绝缘层，设于所述第一反射电极层远离所述驱动电路层的一侧；
    发光器件层，设于所述第一绝缘层远离所述驱动电路层的一侧，包括依次层叠设置于所述第一绝缘层远离所述驱动电路层一侧的第二反射电极层、有机发光层和公共电极层；其中，所述第二反射电极层包括位于所述显示区的多个第二主反射电极和位于所述外围区的多个第二辅助反射电极；
    各个所述第二主反射电极和各个所述第一主反射电极一一对应的电连接；
    且所述第二主反射电极在所述第一反射电极层的正投影，位于对应的所述第一主反射电极内。
  2. 根据权利要求1所述的显示面板，其中，所述外围区包括有感测区；
    所述第一辅助反射电极包括位于所述感测区的多个第三辅助反射电极，所述第三辅助反射电极与所述驱动电路层电连接；所述第三辅助反射电极的图案与所述第一主反射电极的图案相同；
    所述第二辅助反射电极包括位于所述感测区的多个第四辅助反射电极，各个所述第四辅助反射电极与各个所述第三辅助反射电极一一对应的电连接；所述第四辅助反射电极的图案与所述第二主反射电极的图案相同；
    所述有机发光层和所述公共电极层覆盖所述感测区。
  3. 根据权利要求1所述的显示面板，其中，所述第二主反射电极在所述第一反射电极层的正投影的任意一点，与对应的所述第一主反射电极的边缘上的任意一点之间的距离的最小值，为第一距离；
    所述第二主反射电极的边缘的任意一点与所述第二主反射电极的中心的距离的最小值为第一尺寸值；
    所述第一距离在所述第一尺寸值的13％～17％的范围内。
  4. 根据权利要求1所述的显示面板，其中，所述第二主反射电极在所述第一反射电极层的正投影的任意一点，与对应的所述第一主反射电极的边缘上的任意一点之间的距离的最小值，等于0.2～0.5微米。
  5. 根据权利要求1所述的显示面板，其中，相邻两个所述第一主反射电极之间的间距为第二距离；
    所述第一主反射电极的边缘的任意一点与所述第一主反射电极的中心的距离的最小 值为第二尺寸值；
    所述第二距离在所述第二尺寸值的7％～10％范围内。
  6. 根据权利要求1所述的显示面板，其中，相邻两个所述第一主反射电极之间的间距等于0.1～0.3微米。
  7. 根据权利要求1所述的显示面板，其中，所述第二主反射电极的边缘的任意一点，与所述第二主反射电极的中心的距离的最小值为第一尺寸值；
    相邻两个所述第二主反射电极之间的间距为第三距离；
    所述第三距离在所述第一尺寸值的30％～50％的范围内。
  8. 根据权利要求1所述的显示面板，其中，相邻两个所述第二主反射电极之间的间距等于0.6～1.0微米。
  9. 根据权利要求1～8任意一项所述的显示面板，其中，所述第二反射电极层包括依次层叠于所述第一绝缘层远离所述驱动电路层的表面的第一钛金属层、第一铝金属层、第二钛金属层和钼金属层；其中，所述第一钛金属层的厚度为80～120埃，所述第一铝金属层的厚度为400～500埃，所述第二钛金属层的厚度为40～60埃，所述钼金属层的厚度为40～60埃。
  10. 根据权利要求1～8任意一项所述的显示面板，其中，所述第一反射电极层包括依次层叠于所述驱动电路层一侧的第三钛金属层、第二铝金属层和氮化钛层；其中，所述第三钛金属层的厚度为80～120埃，所述第二铝金属层的厚度为700～900埃，所述氮化钛层的厚度可以为80～120埃。
  11. 根据权利要求1～8任意一项所述的显示面板，其中，所述第二主反射电极的中心在所述第一反射电极层上的正投影，与对应的所述第一主反射电极的中心重合。
  12. 根据权利要求1～8任意一项所述的显示面板，其中，所述外围区包括绑定区；所述第一反射电极层还包括设于所述绑定区的第五辅助反射电极；所述第五辅助反射电极与所述驱动电路层电连接；
    所述第一绝缘层具有绑定孔，所述绑定孔暴露所述第五辅助反射电极的至少部分区域。
  13. 根据权利要求1～8任意一项所述的显示面板，其中，所述发光器件层还包括像素定义层；
    所述像素定义层设于所述第一绝缘层远离所述驱动背板的表面，且位于所述第二主反射电极之间的间隙中；
    所述像素定义层在所述第一反射电极层的正投影，与所述第一主反射电极部分重合。
  14. 根据权利要求1～8任意一项所述的显示面板，其中，相邻两个所述第一辅助反射电极之间的间距大于相邻两个所述第一主反射电极之间的间距；相邻两个所述第二辅助反射电极之间的间距大于相邻两个所述第二主反射电极之间的间距。
  15. 根据权利要求1～8任意一项所述的显示面板，其中，所述第一绝缘层的透光率不小于70％。
  16. 根据权利要求1～15任意一项所述的显示面板，其中，所述驱动电路层与所述第一反射电极层之间设置有第二绝缘层；所述第二绝缘层具有多个第二过孔，各个所述第二过孔内设置有第二金属连接件；
    各个所述第一主反射电极通过各自对应的所述第二金属连接件与所述驱动电路层电连接；
    所述第一绝缘层具有与各个所述第一主反射电极一一对应的多个连接过孔，任意一个所述连接过孔暴露对应的所述第一主反射电极的部分表面；
    各个所述第二主反射电极和各个所述第一主反射电极通过对应的所述连接过孔一一对应的电连接；
    其中，所述连接过孔在所述第二反射电极层上的正投影，位于对应的所述第二主反射电极内；所述连接过孔在所述第二反射电极层上的正投影的任意一点，与对应的所述第二主反射电极的边缘的任意一点之间的距离的最小值，不小于第一阈值；所述第一阈值在相邻两个所述第二主反射电极的间距的0.13倍～1.3倍之间。
  17. 根据权利要求16所述的显示面板，其中，所述连接过孔在所述第二反射电极层上的正投影的任意一点，与对应的所述第二主反射电极的边缘的任意一点之间的距离的最小值，等于所述第一阈值。
  18. 根据权利要求16所述的显示面板，其中，所述第二主反射电极至少存在相邻的第一边缘和第二边缘；所述连接过孔在所述第二反射电极层上的正投影的任意一点，与对应的所述第二主反射电极的第一边缘的任意一点之间的距离的最小值，等于所述第一阈值；且所述连接过孔在所述第二反射电极层上的正投影的任意一点，与对应的所述第二主反射电极的第二边缘的任意一点之间的距离的最小值，等于所述第一阈值。
  19. 根据权利要求16所述的显示面板，其中，所述第二主反射电极的边缘的任意一点与所述第二主反射电极的中心的距离的最小值为第一尺寸值；
    所述第一阈值在所述第一尺寸值的5％～8％范围内。
  20. 根据权利要求16所述的显示面板，其中，所述第二主反射电极所电连接的所述第二金属连接件在所述第二反射电极层的正投影，位于所述第二主反射电极内，且与所述连接过孔在所述第二反射电极层的正投影不完全交叠。
  21. 根据权利要求20所述的显示面板，其中，所述连接过孔在所述第二反射电极层上的正投影的任意一点，与对应的所述第二主反射电极的边缘的任意一点之间的距离的最小值，等于第四距离；
    所述第二金属连接件在所述第二反射电极层上的正投影的任意一点，与所述第二金属连接件所电连接的第二主反射电极的边缘的任意一点之间的距离的最小值，等于第五距 离；
    所述第五距离小于所述第四距离。
  22. 根据权利要求16所述的显示面板，其中，所述第二金属连接件在所述第二反射电极层上的正投影，位于所述第二金属连接件所电连接的第二主反射电极内；所述第二金属连接件在所述第二反射电极层上的正投影的任意一点，与所述第二金属连接件所电连接的第二主反射电极的边缘的任意一点之间的距离的最小值，不大于第二阈值；所述第二阈值小于所述第一阈值。
  23. 根据权利要求16所述的显示面板，其中，所述第二主反射电极在所述驱动电路层上的正投影为中心对称的六边形，且各个所述第二主反射电极呈蜂巢状排布；各个所述第二主反射电极形成多个沿行方向的第二主反射电极行；
    所述第二主反射电极包括相对设置的两个第一边璧，以及与两个所述第一边璧连接的四个第二边璧；两个所述第一边壁均垂直于所述行方向；四个所述第二边璧围成相对设置的第一顶角和第二顶角；
    所述连接过孔在对应的所述第二主反射电极上的正投影的任意一点，与该第二主反射电极的第一顶角的两个第二边壁中的任意一个所述第二边壁上的任意一点之间的距离的最小值，均等于所述第一阈值。
  24. 根据权利要求23所述的显示面板，其中，一个所述第二主反射电极电连接的所述第二金属连接件在该第二主反射电极上的正投影位置，在所述第二主反射电极行的相邻设置的两个所述第二主反射电极中具有对称关系。
  25. 根据权利要求24所述的显示面板，其中，所述连接过孔在对应的所述第二主反射电极上的正投影位置，在所述第二主反射电极行的相邻设置的两个所述第二主反射电极中排布相同。
  26. 根据权利要求16所述的显示面板，其中，所述连接过孔的直径为0.2～0.4微米。
  27. 一种显示装置，包括权利要求1～26任一项所述的显示面板。
PCT/CN2020/081880 2020-03-27 2020-03-27 显示面板和显示装置 Ceased WO2021189495A1 (zh)

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