WO2021193990A1 - Cellule solaire à pérovskite comprenant une électrode transparente intégrée dans un tampon, et un procédé pour la fabriquer - Google Patents

Cellule solaire à pérovskite comprenant une électrode transparente intégrée dans un tampon, et un procédé pour la fabriquer Download PDF

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Publication number
WO2021193990A1
WO2021193990A1 PCT/KR2020/004039 KR2020004039W WO2021193990A1 WO 2021193990 A1 WO2021193990 A1 WO 2021193990A1 KR 2020004039 W KR2020004039 W KR 2020004039W WO 2021193990 A1 WO2021193990 A1 WO 2021193990A1
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WIPO (PCT)
Prior art keywords
transparent electrode
buffer
oxide
solar cell
perovskite solar
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Ceased
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PCT/KR2020/004039
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English (en)
Korean (ko)
Inventor
김한기
김수경
최동혁
김도형
서형진
소준영
이유선
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Korea Electric Power Corp
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Korea Electric Power Corp
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Priority to PCT/KR2020/004039 priority Critical patent/WO2021193990A1/fr
Publication of WO2021193990A1 publication Critical patent/WO2021193990A1/fr
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
    • H10K30/80—Constructional details
    • H10K30/81—Electrodes
    • H10K30/82—Transparent electrodes, e.g. indium tin oxide [ITO] electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
    • H10K30/50—Photovoltaic [PV] devices
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/549—Organic PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Definitions

  • the present invention relates to a perovskite solar cell having a buffer-integrated transparent electrode and a method for manufacturing the same, and more particularly, to a transparent electrode and a hole transport layer by providing a buffer-integrated transparent electrode providing an anode function and a hole extraction function.
  • a perovskite solar cell with a buffer-integrated transparent electrode for improving hole movement by reducing the energy band gap difference between the photoactive layer and the transparent electrode as well as not producing an additional hole transport layer by forming in one process, and its It relates to a manufacturing method.
  • the perovskite solar cells have been growing significantly faster in recent years compared to silicon solar cells and thin film solar cells.
  • the perovskite crystal structure refers to a material having the same structure as calcium titanate (CaTiO 3 ).
  • the perovskite structure has a crystal structure of ABX3 (A and B are cations, and X is an anion that binds them).
  • This perovskite solar cell uses perovskite as a photoactive layer, and is spotlighted as a next-generation solar cell because of its advantages of high efficiency, low price, and low-temperature solution process.
  • the perovskite material is a material with a three-dimensional structure, and has the potential as a light absorbing material for solar cells despite the low band gap energy.
  • the transparent electrode and the hole transport layer (HTL) of the perovskite solar cell have a great influence on the photoelectric conversion efficiency.
  • the light passing through the transparent electrode and the hole transport layer generates excitons in the photoactive layer, and the generated excitons move holes and electrons at the interface to the hole transport layer and the electron transport layer. In this case, more excitons are generated as the amount of light transmitted through the transparent electrode and the hole transport layer increases.
  • a transparent electrode and a hole transport layer showing good conductivity can improve the photoelectric conversion efficiency.
  • hole transport layers are produced using various metal oxides (eg, Cu 2 O, NiO, MoO 3, etc.) and polymer materials (eg, PCBM, Spiro-OMeTAD, etc.) based on low-temperature and solution processes.
  • metal oxides eg, Cu 2 O, NiO, MoO 3, etc.
  • polymer materials eg, PCBM, Spiro-OMeTAD, etc.
  • the hole transport layer of the perovskite solar cell is manufactured as a thin film through such a solution process, the surface uniformity of the thin film is low and it is not easy to apply to a large area.
  • the hole transport layer is manufactured as a thin film, it is necessary to provide a method that has a high surface uniformity of the thin film and is easy to apply to a large area.
  • An object of the present invention is not only to not prepare an additional hole transport layer by forming a transparent electrode and a hole transport layer in one process by having a buffer-integrated transparent electrode that provides an anode function and a hole extraction function, but also energy between the photoactive layer and the transparent electrode
  • An object of the present invention is to provide a perovskite solar cell having a buffer-integrated transparent electrode for improving hole movement by reducing a band gap difference, and a method for manufacturing the same.
  • a perovskite solar cell having a buffer-integrated transparent electrode in the perovskite solar cell, a transparent electrode formed on a substrate through a sputtering process; a photoactive layer coated with perovskite; and a buffer-integrated transparent electrode formed as a buffer layer between the transparent electrode and the photoactive layer through a simultaneous sputtering process for the first oxide and the second oxide.
  • the first oxide may be indium tin oxide (ITO), and the second oxide may be antimony copper oxide (ACO).
  • ITO indium tin oxide
  • ACO antimony copper oxide
  • the power applied to the target of the first oxide may be DC power of 100W, and the power applied to the target of the second oxide may be that of applying RF power of 210W.
  • the deposition thickness of the first oxide and the second oxide may be determined by controlling the deposition time.
  • the deposition thickness of the first oxide and the second oxide may be determined in a ratio of 1:9 wt% or 2:8 wt%.
  • an electron transport layer formed on the photoactive layer further comprising, wherein the electron transport layer, Phenyl-C61-Butyric acid methyl ester (PCBM) may be coated on the photoactive layer.
  • PCBM Phenyl-C61-Butyric acid methyl ester
  • the BCP is formed on the electron transport layer to prevent the leakage of holes while transferring electrons; and a metal electrode formed on the BCP.
  • the metal electrode as a cathode, may be made of any one of silver (Ag), aluminum (Al), gold (Au), and magnesium (Mg).
  • the substrate may be any one of a glass substrate, a plastic substrate, and a flexible substrate.
  • the method comprising: forming a transparent electrode on a substrate through a sputtering process; forming a photoactive layer coated with perovskite; and forming a buffer-integrated transparent electrode as a buffer layer between the transparent electrode and the photoactive layer through a simultaneous sputtering process for the first oxide and the second oxide.
  • the present invention not only does not manufacture an additional hole transport layer by forming a transparent electrode and a hole transport layer in a single process by having a buffer-integrated transparent electrode that provides an anode function and a hole extraction function, but also an energy band gap between the photoactive layer and the transparent electrode By reducing the difference, hole transport can be improved.
  • the uniformity of the surface can be improved and a large-area solar cell can be manufactured by manufacturing the buffer-integrated transparent electrode corresponding to the hole transport layer by the sputtering process.
  • the present invention can be utilized as an electrode for a perovskite solar cell, an organic light emitting diode (OLED), and a transparent electronic device as a buffer-integrated transparent electrode.
  • OLED organic light emitting diode
  • the present invention can be manufactured stably and simply without separating the transparent electrode and the hole transport layer through a vacuum deposition process rather than a solution process.
  • FIG. 1 is a view showing a perovskite solar cell having a buffer-integrated transparent electrode according to an embodiment of the present invention
  • 2 to 5 are diagrams showing electrical characteristics according to an increase in the deposition thickness of the buffer-integrated transparent electrode
  • 6 and 7 are views showing optical characteristics according to the deposition thickness of the buffer-integrated transparent electrode
  • FIG. 9 is a view showing a method of manufacturing a perovskite solar cell having a buffer-integrated transparent electrode according to an embodiment of the present invention.
  • FIG. 1 is a view showing a perovskite solar cell having a buffer-integrated transparent electrode according to an embodiment of the present invention.
  • a perovskite solar cell (hereinafter referred to as 'solar cell', 100) having a buffer-integrated transparent electrode according to an embodiment of the present invention provides an anode function and a hole extraction function.
  • the transparent electrode and the hole transport layer are formed in one process, so that an additional hole transport layer is not manufactured, and the energy band gap difference between the photoactive layer 40 and the transparent electrode 20 is reduced. Hole transport can be improved.
  • the solar cell 100 includes a substrate 10, a transparent electrode 20, a buffer-integrated transparent electrode 30, a photoactive layer 40, an electron transport layer 50, a BCP 60, It is constructed by stacking the metal electrodes 70 .
  • the substrate 10 a glass substrate, a plastic substrate, a flexible substrate, or the like may be used.
  • the plastic substrate is, for example, a substrate made of any one of PET (polyethylene terephthalate), PEN (polyethylenenaphthelate), PP (polypropylene), PI (polyamide), TAC (tri acetyl cellulose), PES (polyethersulfone) and
  • the flexible substrate is a substrate made of any one of an aluminum foil and a stainless steel foil.
  • the transparent electrode 20 is thinly formed on the substrate 10 through a sputtering process.
  • the transparent electrode 20 is indium tin oxide (Indium Tin Oxide, ITO), a transparent conductive oxide (Transparent Conducting Oxide, TCO), silver nanowires (silver nanowier), carbon nanotubes (Carbon NanoTube, CNT), graphene ( graphene) and a conducting polymer, but indium tin oxide (hereinafter referred to as 'ITO') will be applied for description.
  • the buffer-integrated transparent electrode 30 is continuously formed on the transparent electrode 20 after forming the transparent electrode 20 .
  • the buffer-integrated transparent electrode 30 is formed on the transparent electrode 20 through a co-sputtering process for ITO and antimony doped copper oxide (ACO) (hereinafter referred to as 'ACO'). co-deposited on ITO and antimony doped copper oxide (ACO) (hereinafter referred to as 'ACO'). co-deposited on
  • the simultaneous sputtering process is a method of vacuum deposition on the substrate 10 by applying power to two targets of ITO and ACO.
  • DC power 100W is applied to the power applied to the target of ITO
  • RF power 210W is applied to the power applied to the ACO.
  • the power applied to each of ITO and ACO is maintained constant, and the optimum deposition thickness of each of ITO and ACO is determined by controlling the deposition time.
  • the deposition thickness of ACO and ITO is preferably determined in a ratio of 1:9 wt% or 2:8 wt%.
  • the buffer-integrated transparent electrode 30 is a thin film formed by the simultaneous deposition process of ITO and ACO, and has an anode function that exhibits excellent electrical properties by the function of IOT, as well as an ACO function to facilitate hole movement by It represents the hole extraction function.
  • ACO functions as a hole transport layer by displacing antimony ions (Sb 3+ ) and copper oxide ions (Cu 2+ ) into a solid solution. Accordingly, the buffer-integrated transparent electrode 30 controls the energy band level between the transparent electrode 20 and the photoactive layer 40 to facilitate the movement of holes.
  • the buffer-integrated transparent electrode 30 exhibits a high transmittance of about 76% and a low sheet resistance of 11.5 Ohm/square (refer to FIG. 3 to be described later).
  • the buffer-integrated transparent electrode 30 is formed through a simultaneous sputtering process rather than a solution process, it can be formed as a buffer layer having a high uniformity of a thin film over a large area.
  • the buffer-integrated transparent electrode 30 is formed using an RF/DC magnetron sputter system. That is, the RF / DC magnetron sputtering system maintains 100 W of DC power applied to the target of ITO, and maintains 210 W of RF power applied to the target of ACO to form a buffer-integrated transparent electrode 30 by vacuum deposition at the same time. .
  • FIGS. 2 to 5 are diagrams illustrating electrical characteristics according to an increase in the deposition thickness of the buffer-integrated transparent electrode.
  • FIG. 2 shows the resistance change according to the increase in the deposition thickness of the single ACO thin film
  • FIG. 3 shows the resistance change according to the increase in the deposition thickness of the buffer-integrated transparent electrode 30
  • 4 shows the change in carrier concentration according to the increase in the deposition thickness of the ACO single thin film
  • FIG. 5 shows the change in the carrier concentration according to the increase in the deposition thickness of the buffer-integrated transparent electrode 30 .
  • the buffer-integrated transparent electrode 30 exhibits superior electrical properties compared to a single ACO, and as the deposition thickness increases, the electrical properties improve.
  • optical characteristics (transmittance for each wavelength) according to the deposition thickness of the ACO single thin film and the buffer-integrated transparent electrode 30 are as shown in FIGS. 6 and 7 .
  • 6 and 7 are views showing optical characteristics according to the deposition thickness of the buffer-integrated transparent electrode.
  • FIG. 6 shows the change in transmittance for each wavelength according to the deposition thickness of the single ACO thin film
  • FIG. 7 shows the change in transmittance for each wavelength according to the deposition thickness of the buffer-integrated transparent electrode 30 .
  • the buffer-integrated transparent electrode 30 exhibits superior transmittance for the same deposition thickness as compared to the ACO single thin film.
  • FIG. 8 is a diagram illustrating an expected energy band diagram.
  • the buffer-integrated transparent electrode 30 reduces the energy bandgap difference between the photoactive layer 40 and the transparent electrode 20 , thereby activating hole movement.
  • the photoactive layer 40 is coated with perovskite (CH 3 NH 3 PbI 3 ) on the buffer-integrated transparent electrode 30 .
  • the photoactive layer 40 generates excitons by the transmitted light, and moves the generated excitons to the hole and electrons at the interface to the hole transport layer and the electron transport layer.
  • the perovskite is a buffer-integrated transparent electrode with a solution in which methylammonium iodide (CH 3 NH 3 I) and lead iodide (PbI 2 ) are dispersed in N,N-dimethylformamide (N,N-dimethylformamide, DMF). It is formed by coating on (30).
  • organic/inorganic materials and derivatives thereof used for the photoactive layer 40 may be used without limitation.
  • the electron transport layer 50 is coated with Phenyl-C61-Butyric acid methyl ester (PCBM) on the photoactive layer 40 for electron extraction from the photoactive layer 40 .
  • PCBM Phenyl-C61-Butyric acid methyl ester
  • the BCP 60 is a bathocuproine, and performs a function of preventing the leakage of holes while transferring electrons.
  • the metal electrode 70 is made of, for example, silver (Ag), aluminum (Al), gold (Au), magnesium (Mg), or the like, and is completed by forming a cathode.
  • the anode may be formed by being deposited in a high vacuum state by a vacuum deposition process, or may be formed through a solution or paste process.
  • FIG. 9 is a view showing a method of manufacturing a perovskite solar cell having a buffer-integrated transparent electrode according to an embodiment of the present invention.
  • the transparent electrode 20 is formed on the substrate 10 through a sputtering process (S1).
  • the buffer-integrated transparent substrate 10 is formed on the transparent electrode 20 through the simultaneous sputtering process of ITO and ACO (S2).
  • the buffer-integrated transparent substrate 10 functions as an anode or a hole transport layer.
  • the photoactive layer 40 is formed on the buffer-integrated transparent substrate 10 (S3), and the electron transport layer 50 is formed on the photoactive layer 40 (S4).
  • the BCP 60 is formed on the electron transport layer 50 (S5), and the metal electrode 70 is formed on the BCP 60 (S6).

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  • Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Photovoltaic Devices (AREA)

Abstract

La présente invention concerne une cellule solaire à pérovskite comprenant électrode transparente intégrée dans un tampon et un procédé pour la fabriquer. La cellule solaire à pérovskite comprenant une électrode transparente intégrée dans un tampon selon un mode de réalisation de la présente invention comprend : une électrode transparente formée sur un substrat par un procédé de pulvérisation cathodique ; une couche photoactive revêtue de pérovskite ; et une électrode transparente intégrée dans un tampon formée en tant que couche tampon entre l'électrode transparente et la couche photoactive par l'intermédiaire d'un procédé de co-pulvérisation en liaison avec un premier oxyde et un second oxyde.
PCT/KR2020/004039 2020-03-25 2020-03-25 Cellule solaire à pérovskite comprenant une électrode transparente intégrée dans un tampon, et un procédé pour la fabriquer Ceased WO2021193990A1 (fr)

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PCT/KR2020/004039 WO2021193990A1 (fr) 2020-03-25 2020-03-25 Cellule solaire à pérovskite comprenant une électrode transparente intégrée dans un tampon, et un procédé pour la fabriquer

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PCT/KR2020/004039 WO2021193990A1 (fr) 2020-03-25 2020-03-25 Cellule solaire à pérovskite comprenant une électrode transparente intégrée dans un tampon, et un procédé pour la fabriquer

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2023060941A1 (fr) * 2021-10-14 2023-04-20 中国华能集团清洁能源技术研究院有限公司 Procédé de préparation d'une couche de film d'électrode sur la surface d'un substrat de cellule solaire

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JP2015211213A (ja) * 2014-04-29 2015-11-24 国立中央大学 ペロブスカイト薄膜及び太陽電池の製造方法
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KR20190010197A (ko) * 2017-07-21 2019-01-30 엘지전자 주식회사 페로브스카이트 태양전지 및 이를 포함하는 탬덤 태양전지
KR20200085113A (ko) * 2019-01-04 2020-07-14 한국전력공사 버퍼 일체형 투명전극을 구비한 페로브스카이트 태양전지 및 이의 제조 방법

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JP2015211213A (ja) * 2014-04-29 2015-11-24 国立中央大学 ペロブスカイト薄膜及び太陽電池の製造方法
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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2023060941A1 (fr) * 2021-10-14 2023-04-20 中国华能集团清洁能源技术研究院有限公司 Procédé de préparation d'une couche de film d'électrode sur la surface d'un substrat de cellule solaire
US12369425B2 (en) 2021-10-14 2025-07-22 Huaneng Clean Energy Research Institute Method for preparing electrode film layer on surface of solar cell substrate

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