WO2022143352A1 - 太阳能电池及其正面电极和制作方法 - Google Patents

太阳能电池及其正面电极和制作方法 Download PDF

Info

Publication number
WO2022143352A1
WO2022143352A1 PCT/CN2021/140577 CN2021140577W WO2022143352A1 WO 2022143352 A1 WO2022143352 A1 WO 2022143352A1 CN 2021140577 W CN2021140577 W CN 2021140577W WO 2022143352 A1 WO2022143352 A1 WO 2022143352A1
Authority
WO
WIPO (PCT)
Prior art keywords
thin
busbar
busbars
solar cell
front electrode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/CN2021/140577
Other languages
English (en)
French (fr)
Inventor
黄智�
张�林
夏伟
徐冠群
徐涛
万柳斌
彭彪
顾峰
翟绪锦
谢泰宏
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Tongwei Solar Meishan Co Ltd
Tongwei Solar Chengdu Co Ltd
Tongwei Solar Anhui Co Ltd
Tongwei Solar Hefei Co Ltd
Tongwei Solar Jintang Co Ltd
Original Assignee
Tongwei Solar Meishan Co Ltd
Tongwei Solar Chengdu Co Ltd
Tongwei Solar Anhui Co Ltd
Tongwei Solar Hefei Co Ltd
Tongwei Solar Jintang Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tongwei Solar Meishan Co Ltd, Tongwei Solar Chengdu Co Ltd, Tongwei Solar Anhui Co Ltd, Tongwei Solar Hefei Co Ltd, Tongwei Solar Jintang Co Ltd filed Critical Tongwei Solar Meishan Co Ltd
Priority to EP21914089.4A priority Critical patent/EP4099403A4/en
Priority to US17/908,483 priority patent/US20230343878A1/en
Priority to AU2021414045A priority patent/AU2021414045A1/en
Publication of WO2022143352A1 publication Critical patent/WO2022143352A1/zh
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

Links

Images

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/20—Electrodes
    • H10F77/206—Electrodes for devices having potential barriers
    • H10F77/211—Electrodes for devices having potential barriers for photovoltaic cells
    • H10F77/215—Geometries of grid contacts
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/93—Interconnections
    • H10F77/933—Interconnections for devices having potential barriers
    • H10F77/935—Interconnections for devices having potential barriers for photovoltaic devices or modules
    • H10F77/937—Busbar structures for modules
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H10F71/121—The active layers comprising only Group IV materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/20—Electrodes
    • H10F77/206—Electrodes for devices having potential barriers
    • H10F77/211—Electrodes for devices having potential barriers for photovoltaic cells
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/30—Coatings
    • H10F77/306—Coatings for devices having potential barriers
    • H10F77/311—Coatings for devices having potential barriers for photovoltaic cells
    • H10F77/315—Coatings for devices having potential barriers for photovoltaic cells the coatings being antireflective or having enhancing optical properties
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F10/00—Individual photovoltaic cells, e.g. solar cells
    • H10F10/10—Individual photovoltaic cells, e.g. solar cells having potential barriers
    • H10F10/14—Photovoltaic cells having only PN homojunction potential barriers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/93—Interconnections
    • H10F77/933—Interconnections for devices having potential barriers
    • H10F77/935—Interconnections for devices having potential barriers for photovoltaic devices or modules
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Definitions

  • the present application belongs to the technical field of solar cells, and more particularly, relates to a solar cell, a front electrode thereof, and a preparation method thereof.
  • Crystalline silicon solar cell is a device that uses the photovoltaic effect of PN junction to convert light energy into electrical energy.
  • PERC Passivated Emitter and Rear Cell
  • HJT Heterojunction Technology
  • TOPCon TOPCon
  • the molten tin in the ribbon and the silver paste on the busbar form a silver-tin alloy at high temperature to achieve metal connection.
  • the pulling force is mainly provided by the welding between the welding point on the busbar and the welding strip.
  • the width of the thin busbar is obviously smaller than that of the welding strip, there will inevitably be a certain alignment deviation of the welding strip during the welding process, so that the welding strip is very easy to form welding in the thin busbar region and the auxiliary grid perpendicularly intersecting with the busbar.
  • the application with the patent application number CN201820897922.0 provides a front electrode structure of a multi-busbar battery and a solar cell.
  • the secondary grid line of the application is composed of a straight segment and a deformed segment, and the deformed segment is arranged in the secondary grid.
  • the width of the deformation segment gradually widens from the end of the straight segment to the busbar, the height of the deformation segment is higher than the height of the linear segment, and the total width of the deformation segment is greater than or equal to the width of the pad.
  • the deformation zone is designed in the area where the thin busbar and the secondary grid overlap, and the total amount of silver paste in this area is increased, so as to solve the problem of welding fracture of the secondary grid during the welding process of the multi-busbar battery to a certain extent. problem, but its effect is not very satisfactory and needs to be further improved.
  • the Chinese patent application number CN201711417592.7 discloses a new type of multi-busbar cell and a photovoltaic module using the cell, which designs the busbar as a double-line flat oval composite shape structure, The end point of each small flat ellipse is the welding reinforcement point to improve its reliability.
  • the double-wire composite busbar is used.
  • the grid line at one end has defects such as aging and broken grid, the grid line at the other end can still collect current normally. Basically, it will not affect the reduction of the overall power generation.
  • Adopting the busbar line structure of this application avoids the welding effect of the thin busbar and the welding strip to a certain extent, but at the same time reduces the effect of collecting current between the thin busbar and the welding connection.
  • the purpose of the present application is to solve the problem that the quality and reliability of the existing PERC solar cells need to be further improved, and to provide a high-efficiency and high-reliability PERC solar cell, a front electrode and a manufacturing method thereof. Using the technical solution of the present application can effectively improve the quality and reliability of the battery while improving the conversion efficiency of the battery.
  • the busbar includes a thin busbar and welding points spaced on the thin busbar, and the thin busbar between adjacent welding points includes a straight thin busbar connecting two welding points , and the side thin busbars located on both sides of the straight thin busbars.
  • widths of the linear thin busbars and the side thin busbars are both 0.06 ⁇ 0.04 mm.
  • the side thin busbars are disposed divergently with respect to the solder joints, and the spacing W2 between the two side thin busbars is greater than the width W1 of the solder joints.
  • the side thin busbars between adjacent solder joints are composed of straight lines or curves. More preferably, the side thin busbars between adjacent solder joints are straight lines parallel to the straight thin busbars, and the two The ends are connected to the solder joints by transition wires.
  • two ends of the straight thin busbars are respectively connected to the central regions of the two solder joints, and the thin busbars on both sides are symmetrically distributed with respect to the straight thin busbars.
  • the secondary grid is made by screen printing without mesh.
  • both ends of the thin busbars are provided with edge harpoon thin busbars, and the edge harpoon thin busbars are designed with an S-shaped curve.
  • the sub-grids are vertically distributed with the main grid, and the grid line spacing between adjacent sub-grids is 1.00-1.32 mm, and the sub-grid line width is 10-26 ⁇ m.
  • the main grid and the secondary grid adopt a step-by-step printing process.
  • the solder joints and the thin busbars are synchronously printed, and during the printing of the auxiliary grid area, the auxiliary grids and the edge harpoon thin busbars are synchronously printed.
  • a screenless version is used for printing the subgrid area.
  • a solar cell of the present application includes the front electrode.
  • the thin busbar between adjacent solder joints is designed to consist of a straight thin busbar and side thin busbars on both sides.
  • the combined composite structure can effectively ensure the current collection effect of the connection between the thin busbar and the welding ribbon, and prevent the secondary grid from breaking at the welding place of the busbar, that is, to overcome the thin busbar and the welding ribbon of the existing front electrode.
  • the effect of welding on the battery and its components improves the quality and reliability of the battery and its components.
  • the auxiliary grid is made of mesh-free screen printing, so that the mesh knot of the warp and weft in the steel mesh cloth on the auxiliary grid line can be eliminated, and the wire mesh can be effectively improved.
  • the present application can effectively solve the problem that the net junction position of the busbar area is easily formed by the use of the netless screen printing technology through the cooperation of the meshless screen printing technology, the optimization of the busbar structure and the step-by-step printing. , which further ensures the quality and reliability of battery products.
  • the edge harpoon thin busbars at both ends of the thin busbar are designed with an S-shaped curve, which can effectively reduce the formation of vertical and horizontal steel wires of the steel mesh in the harpoon busbar area by more than 80%. It is beneficial to further improve the quality and reliability of battery products.
  • the manufacturing method of the front electrode of a solar cell of the present application through the design of a plurality of composite thin busbar structures and S-shaped harpoon thin busbar structures, the meshless screen printing process of the secondary grid, and the main grid
  • the step-by-step printing of the gate area and the sub-gate area can improve the photoelectric conversion efficiency of PERC cells by more than 0.1%, and reduce the consumption of front silver by 3-10mg. At the same time, the quality and reliability of cells and components have also been effectively improved.
  • a method for manufacturing a front electrode of a solar cell of the present application wherein the secondary grid adopts a mesh-free technology and a step-by-step printing method, which eliminates the poor ink permeability of the front silver paste and the grid line morphology caused by the steel mesh knot.
  • the problem of high and low fluctuations it breaks the limitation of the high tensile force of the main gate area by the auxiliary gate paste, thereby improving the metallization performance of the auxiliary gate area, and can reduce the design line width of the auxiliary gate line to 10-26 ⁇ m, and realize the shading area.
  • the grid line spacing of the secondary grid can be effectively reduced to 1.00-1.32mm, matching the square resistance of the diffusion 155-250 ⁇ / ⁇ , which improves the conversion efficiency of the cell.
  • FIG. 1 is a schematic structural diagram of an existing MBB front electrode (9 bus bars);
  • Example 2 is a schematic structural diagram of a front electrode of a solar cell in Example 2;
  • Example 3 is a partial enlarged view of the front electrode of the solar cell in Example 2;
  • Example 4 is a schematic structural diagram of a front electrode of a solar cell in Example 3.
  • Example 5 is a partial enlarged view of the front electrode of the solar cell in Example 3.
  • FIG. 6 is a schematic diagram of the secondary gate area of the meshless screen plate of the present application.
  • FIG. 7 is a schematic diagram of the harpoon busbar area of the meshless version of the application.
  • FIG. 8 is a schematic diagram of the comparison between the existing linear type and the S-shaped harpoon busbar printing area of the present application.
  • Figure 9 is a step-by-step printing busbar pattern
  • Figure 10 is a step-by-step printing secondary grid pattern
  • FIG. 11 is a schematic cross-sectional view of the solar cell of the application.
  • Figure 12 is the laser SE pattern
  • FIG. 13 is a partial enlarged view of the laser-doped region in FIG. 12 .
  • the present application optimizes the design of the busbar structure of the front electrode. It is designed as a composite type consisting of a straight thin busbar 3-2-2 connecting each adjacent solder joint and side thin busbars 3-2-1 located on both sides of the straight thin busbar 3-2-2 Therefore, on the basis of effectively ensuring the current collection effect of the connection between the thin busbar and the welding ribbon, the secondary grid can be prevented from breaking at the welding place of the busbar.
  • the impact of components improves the quality and reliability of the battery and its components.
  • the side thin busbars 3-2-1 are arranged divergently outward relative to the solder joints 3-1, the spacing W2 between the two side thin busbars 3-2-1 is greater than the width of the solder joints 3-1, and
  • the side thin busbars 3-2-1 can be straight lines or curved lines, preferably straight lines.
  • the method of laser cutting and wire removal is mainly used in the netless screen plate.
  • This method has the advantages of high plate-making efficiency, high yield, and no need to change the front electrode pattern, and has gradually become the mainstream.
  • the auxiliary grid is made by using a meshless screen printing plate, so as to eliminate the meshing of the warp and weft in the steel mesh cloth on the auxiliary grid lines, and effectively improve the ink permeability and grid lines of the screen printing silver paste.
  • the ups and downs of the 3D shape of the line is mainly used in the netless screen plate.
  • the present application can also solve the above problems existing in the junctionless technology by optimizing the structure of the busbar and optimizing the cooperation between the junction-free technology and the busbar structure, which is conducive to further ensuring the quality and quality of the battery and its components. reliability.
  • the front electrode of a solar cell in this embodiment has a busbar 3 including a thin busbar 3-2 and solder joints 3-1 spaced on the thin busbar 3-2, adjacent to each other.
  • the thin busbar 3-2 between the welding points 3-1 includes a straight thin busbar 3-2-2 connecting the two welding points, and side thin busbars 3 located on both sides of the straight thin busbar 3-2-2 -2-1.
  • the structure of a front electrode of a solar cell in this embodiment is basically the same as that in Embodiment 1.
  • the widths of the linear thin busbars 3-2-2 and the side thin busbars 3-2-1 are the same It is 0.06 ⁇ 0.04mm, and the side thin busbars 3-2-1 are arranged divergently outward relative to the solder joints 3-1, and the distance W2 between the thin busbars 3-2-1 on both sides is larger than that of the solder joints 3-1. 1, wherein the side thin busbars 3-2-1 between adjacent solder joints 3-1 can be composed of straight lines or curved lines.
  • the structure of the front electrode of a solar cell in this embodiment is basically the same as that in Embodiment 3, and the main difference is that the side thin busbars 3-2-1 between adjacent solder joints 3-1 in this embodiment are composed of As shown in Figure 4 and Figure 5, when the side thin busbar 3-2-1 is a straight line parallel to the straight thin busbar 3-2-2, its two ends are connected to the solder joint 3- 1 works best when connected. It is further preferred that both ends of the linear thin busbar 3-2-2 are respectively connected to the central regions of the two solder joints 3-1, and the thin busbars 3-2-1 on both sides are symmetrical with respect to the linear thin busbar 3-2-2 Distribution, that is, the linear thin busbars 3-2-2 between different solder joints are collinear.
  • the structure of a front electrode of a solar cell in this embodiment is basically the same as that in Embodiment 4, and the main difference is that the secondary grid 2 in this embodiment is made of meshless screen printing, and the thin main grid 3-2 Both ends are provided with edge harpoon thin busbars 3-3, and the edge harpoon thin busbars 3-3 are designed with an S-shaped curve.
  • the main grid 3 and the sub grid 2 adopt a step-by-step printing process.
  • the gate area is printed, the auxiliary grid 2 and the edge harpoon thin busbar 3-3 are printed synchronously, and the secondary grid area is printed using a meshless screen version, and the grid line spacing between adjacent auxiliary grids 2 is 1.00-1.32mm , the sub-gate 2 line width is 10-26 ⁇ m.
  • a high-efficiency and high-reliability PERC solar cell of the present embodiment includes a back sub-gate electrode 15 , a back passivation layer 14 , a silicon wafer substrate 10 , a front emitter 11 and a front passivation arranged from bottom to top and the anti-reflection layer 12, wherein the front electrode 1 is located above the front surface of the front passivation and anti-reflection layer 12 and forms ohmic contact with the front emitter 11.
  • the structure of the front electrode 1 is the same as that of the fifth embodiment.
  • the manufacturing method of the solar cell of this embodiment specifically includes the following steps:
  • Texturing a single crystal P-type silicon wafer substrate 10 is used, and the front and back surfaces are texturized with alkali to form a textured structure.
  • Diffusion The silicon wafer after texturing is reacted with phosphorus oxychloride and the silicon wafer at high temperature, so that the front side diffuses to form a PN emitter junction (ie, the front side emitter 11).
  • the sheet resistance of the thin layer on the front surface after diffusion is between 160 ⁇ / ⁇ .
  • Laser SE Using the diffused phosphosilicate glass as the phosphorus source, laser doping is performed on the front side of the diffused silicon wafer and the metallized area corresponding to the positive electrode gate line to form a heavily doped region 11-2, so that the silicon
  • the front side of the chip implements the structure of the selective emitter (heavily doped region 11-2, lightly doped region 11-1).
  • the sheet resistance of the heavily doped region is between 60 ⁇ / ⁇ .
  • the laser SE is only doped at the sub-gate of the positive electrode pattern.
  • the laser doping of the main gate region is cancelled, that is, only the sub-gate laser doping region 16 exists, thereby increasing the shallowness
  • the area of the expanded region reduces the surface recombination caused by heavy doping and laser process in the region, improves the short-wave effect, and is beneficial to further improve the conversion efficiency of the cell.
  • the laser SE beam spot is square or rectangular, with a width of 90-110 ⁇ m, and the laser beam spot is 16 The spacing between -1 varies between 0-10 ⁇ m.
  • Alkali polishing Polish the back and edge of the silicon wafer after removing PSG, and remove PSG from the front.
  • Oxidation annealing The silicon wafer after alkali polishing is subjected to oxidation and annealing treatment to form a front oxide layer 13 .
  • a passivation film is prepared on the backside of the annealed silicon wafer, and the backside passivation layer 14 is formed.
  • a passivation and anti-reflection layer 12 is prepared on the front side of the silicon wafer.
  • Backside laser laser drilling is performed on the silicon wafer on which the passivation film is prepared on the backside.
  • Back electrode printing After laser drilling is performed on the front and back sides, the back electrode is prepared by screen printing on the silicon wafer.
  • Back sub-grid printing screen printing the back sub-grid electrode 15 on the printed back electrode silicon wafer.
  • Positive electrode busbar area printing use positive silver paste with high solid content, high solderability, and no burning through silicon nitride (solid content is 80-95%, tin area is greater than 80%, and the average tensile force is greater than 1.0 N, in this example, the polymer M3M-FB07-6) is used, and the positive electrode busbar is prepared by screen printing on the silicon wafer with the back aluminum grid lines printed. The way.
  • the busbar adopts multiple busbars with more than or equal to 9 bars, and the width of each thin busbar is 0.05mm.
  • the pattern of this step adopts the method of auxiliary grid and harpoon thin busbar corresponding to the busbar pattern ( Figure 10); the auxiliary grid adopts the grid line spacing of 1.22mm, parallel and uniform arrangement, the design line width of the auxiliary grid is 22 ⁇ m, the harpoon grid
  • the thin busbar ( Figure 7) adopts an S-curve design.
  • Sintering co-sinter the silicon wafer with the front electrode printed on it, and the sintering peak temperature can be selected between 720-800°C as required, and the region is 750°C in this embodiment.
  • the structure of a solar cell in this embodiment is the same as that in Embodiment 6.
  • the grid line spacing between adjacent sub-grids 2 can be reduced to 1.13 mm
  • the line width of sub-grids 2 can be reduced to 20 ⁇ m
  • the sintering temperature is 750 °C.
  • the structure of a solar cell in this embodiment is the same as that of Embodiment 6.
  • the grid line spacing between adjacent sub-grids 2 can be reduced to 1.32 mm
  • the line width of sub-grids 2 can be reduced to 24 ⁇ m
  • the sintering temperature is 760 °C.
  • the structure of a solar cell in this embodiment is the same as that in Embodiment 6.
  • the grid line spacing between adjacent sub-grids 2 can be reduced to 1.00 mm
  • the line width of sub-grids 2 can be reduced to 10 ⁇ m
  • the sintering temperature is 755 °C.
  • the present application adopts the design of a plurality of composite thin busbar structures and S-shaped harpoon thin busbar structures, the meshless screen printing process of the subgrid, and the step-by-step printing of the busbar area and the subgrid area. , so that the photoelectric conversion efficiency of PERC cells can be increased by more than 0.1%, and the consumption of front silver can be reduced by 3-10mg, breaking the limitation of the secondary grid paste on the high tensile force of the busbar region.
  • the slurry of the sub-gate region is selected separately, which improves the metallization performance of the sub-gate region, reduces the design line width of the sub-gate line to 10-26 ⁇ m, and effectively reduces the spacing of the sub-gate line to 1.00-1.32mm.

Landscapes

  • Photovoltaic Devices (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Sustainable Development (AREA)
  • Engineering & Computer Science (AREA)
  • Sustainable Energy (AREA)

Abstract

本申请公开了一种高效高可靠性PERC太阳能电池及其正面电极和制作方法，属于太阳能电池技术领域。本申请的太阳能电池的正面电极，其主栅包括细主栅以及位于细主栅上间隔分布的焊点，相邻焊点之间的细主栅包括连接两焊点的直线细主栅，以及位于直线细主栅两侧的侧部细主栅。本申请的太阳能电池的正面电极的制作方法，主栅和副栅采用分步印刷工艺。采用本申请的技术方案能够在提升电池转换效率的同时，有效改善其品质和可靠性。

Description

太阳能电池及其正面电极和制作方法
本申请要求于2020年12月30日提交中国专利局，申请号为2020116217625，申请名称为“一种高效高可靠性PERC太阳能电池及其正面电极和制作方法”的中国专利申请的优先权，其全部内容通过引用结合在本申请中。
技术领域
本申请属于太阳能电池技术领域，更具体地说，涉及一种太阳能电池及其正面电极和制备方法。
背景技术
晶硅太阳能电池是一种利用PN结的光生伏特效应将光能转换成电能的器件，PERC(Passivated Emitter and Rear Cell)电池已逐步发展成市场上主流的高效太阳能电池产品和技术。如何进一步提升PERC电池的转换效率，缩小与HJT(Heterojunction Technology)、TOPCon等高效电池的转换效率差异，维持其综合性价比的优势，这是PERC+技术后续持续面临的问题。
同时，PERC电池组件的可靠性和耐久性也越来越受到研究人员及客户的关注。不同的衰减现象，如PID效应、LID、LETID、背板老化破裂、EVA变黄等问题均会影响光伏组件的寿命。随着光伏技术的不断发展，光伏组件质保期也从最初的5年延长到如今的至少25年。由此，国际可再生能源实验室通过对晶硅组件进行室内加速老化试验(包括ISC61215和UL1703标准)来评估组件出厂质量以及近似模拟组件在户外运行环境条件下质保周期内的长期可靠性。从长远发展角度考虑，高效高可靠性电池和组件依然是光伏行业未来发展的主要方向。
正面电极金属化是太阳能电池提效降本的重要环节之一。MBB(Multi-Busbar)电池(主栅数量≥9根)一方面可以大幅提升电池效率，另一方面可以有效降低银浆耗量，由此MBB技术逐步在提升市场占有率，并进一步向无主栅(busbar-free)技术开发。目前，为确保组件可靠性、焊接精度和拉力等问题，MBB图形(图1)设计一般在主栅区设计焊点3-1、细主栅3-2和边缘鱼叉细主栅3-3。在组件焊接过程中，焊带中熔融的锡与主栅上的银浆，在高温下形成银锡合金实现金属连接。其中，主要通过主栅上的焊点与焊带之间的焊接提供拉力。而细主栅上由于银浆较少，焊接后容易引起电阻变大，影响部分区域的 电流汇集。同时由于细主栅宽度明显小于焊带，焊接过程中焊带不可避免会存在一定的对位偏差，使得焊带在细主栅区极易与主栅垂直相交的副栅形成焊接，此时极易引起副栅在焊接处断裂或者部分断裂，导致焊接后EL显示断线。最终在实际使用过程中长期经过环境老化，该区域容易因附着力小或断裂问题引起电阻变大，最终导致发电量不断下降，影响产品品质和可靠性。
针对上述问题，专利申请号为CN201820897922.0的申请案提供了一种多主栅电池的正面电极结构及太阳能电池，该申请案的副栅线由直线段和形变段组成，形变段设置在副栅线与主栅线交接处，形变段的宽度从直线段端部至主栅线逐渐变宽，形变段的高度高于直线段的高度，形变段总宽度大于等于焊盘宽度。即该申请案通过在细主栅与副栅搭接的区域设计形变区，增加该区域的银浆总量，从而在一定程度上能够解决解决多主栅电池焊接过程中副栅线焊接断裂的问题，但其效果并不是很理想，有待进一步改善。
又如，中国专利申请号为CN201711417592.7的申请案公开了一种新型多主栅电池片及应用该类电池片的光伏组件，其将主栅线设计为双线扁椭圆型复合形状结构，每个小扁椭圆的端点为焊接加固点，提高其可靠性，采用双线复合式的主栅，当一端的栅线出现老化断栅等不良时，另外一端的栅线仍然可以正常收集电流，基本不会影响整体发电量的降低。采用该申请案的主栅线结构在一定程度上规避了细主栅与焊带的焊接影响，但也同时会降低细主栅与焊接连接收集电流的效果。
因此，如何在提升电池转换效率的同时确保其品质和可靠性，成为太阳能电池技术持续要解决的难点问题。
发明内容
本申请的目的在于解决现有PERC太阳能电池的品质和可靠性有待进一步提高的问题，而提供了一种高效高可靠性PERC太阳能电池及其正面电极和制作方法。采用本申请的技术方案能够在提升电池转换效率的同时，有效改善其品质和可靠性。
为了解决上述问题，本申请所采用的技术方案如下：
本申请的一种太阳能电池的正面电极，其主栅包括细主栅以及位于细主栅上间隔分布的焊点，相邻焊点之间的细主栅包括连接两焊点的直线细主栅，以及位于直线细主栅两侧的侧部细主栅。
更进一步的，所述直线细主栅及侧部细主栅的宽度均为0.06±0.04mm。
更进一步的，所述侧部细主栅相对于焊点发散设置，且两侧部细主栅之间的间距W2大于焊点的宽度W1。
更进一步的，相邻焊点之间的侧部细主栅由直线或曲线组成，更优选的，相邻焊点之间的侧部细主栅为平行于直线细主栅的直线，其两端通过过渡连接线与焊点相连。
更进一步的，所述直线细主栅的两端分别连接两焊点的中心区域，且两侧部细主栅关于直线细主栅对称分布。
更进一步的，其副栅采用无网结网版印刷而成。
更进一步的，所述细主栅的两端设有边缘鱼叉细主栅，该边缘鱼叉细主栅采用S型曲线设计。
更进一步的，其副栅与主栅垂直分布，且相邻副栅的栅线间距为1.00-1.32mm，副栅线宽为10-26μm。
本申请的太阳能电池的正面电极的制作方法，主栅和副栅采用分步印刷工艺。
更进一步的，主栅区印刷时是将焊点与细主栅进行同步印刷，副栅区印刷时是将副栅与边缘鱼叉细主栅进行同步印刷。
更进一步的，副栅区印刷时采用无网结网版。
本申请的一种太阳能电池，包括所述的正面电极。
相比于现有技术，本申请的有益效果为：
(1)本申请的一种太阳能电池的正面电极，通过对主栅结构进行优化设计，将相邻焊点之间的细主栅设计为由直线细主栅与两侧的侧部细主栅组合而成的复合结构，从而可以在有效保证细主栅与焊带连接收集电流效果的基础上，防止副栅在主栅焊接处发生断裂，即克服现有正面电极的细主栅与焊带焊接对电池及其组件的影响，提高了电池及其组件的品质和可靠性。
(2)本申请的一种太阳能电池的正面电极，其副栅采用无网结网版印刷而成，从而可以消除副栅线条上的钢丝网布中经线和纬线交接的网结，有效改善丝网印刷银浆的透墨性和栅线线条3D形貌的高低起伏。而本申请通过无网结网版印刷技术、主栅结构的优化和分步印刷的配合，可以有效解决采用无网结网版印刷技术存在的主栅区网结位置极易形成缺印的问题，进一步保证了电池产品的品质和可靠性。
(3)本申请的一种太阳能电池的正面电极，细主栅两端的边缘鱼叉细主栅采用S型曲线设计，从而可以有效降低80％以上的鱼叉主栅区的钢丝网纵横钢丝形成的网结，有利于进一步提高电池产品的品质和可靠性。
(4)本申请的一种太阳能电池的正面电极的制作方法，通过多条复合型细主栅结构及S型鱼叉细主栅结构的设计、副栅的无网结网版印刷工艺以及主栅区与副栅区的分步印 刷，从而可以实现PERC电池片光电转换效率0.1％以上的提升，正银耗量降低3-10mg。同时，电池和组件的品质及可靠性等性能也得到了有效改善。
(5)本申请的一种太阳能电池的正面电极的制作方法，其副栅采用无网结技术和分步印刷方式，消除了钢丝网结引起的正银浆料透墨性差、栅线形貌高低起伏的问题；打破了副栅浆料对主栅区过高拉力需求的限制，从而改善了副栅区金属化性能，可以将副栅线设计线宽缩小到10-26μm，实现了遮光面积的降低和银浆耗量的降低；同时副栅栅线间距可以有效降低到1.00-1.32mm，匹配扩散155-250Ω/□的方块方阻，提升了电池片的转换效率。
(6)本申请的一种高效高可靠性PERC太阳能电池，通过对正面电极的结构进行优化设计，从而可以有效克服现有太阳能电池正面电极主栅区焊接以及副栅线无网结网版印刷时对电池性能的影响，实现了在有效提升PERC太阳能电池光电转换效率的同时，提高电池的品质和可靠性。
附图说明
图1为现有MBB正面电极(9主栅)的结构示意图；
图2为实施例2中太阳能电池正面电极的结构示意图；
图3为实施例2中太阳能电池正面电极的局部放大图；
图4为实施例3中太阳能电池正面电极的结构示意图；
图5为实施例3中太阳能电池正面电极的局部放大图；
图6为本申请无网结网版的副栅区示意图；
图7为本申请无网结网版的鱼叉主栅区示意图；
图8为现有直线型与本申请的S型鱼叉主栅印刷区的对比示意图；
图9为分步印刷主栅图形；
图10为分步印刷副栅图形；
图11为本申请的太阳能电池的切面示意图；
图12为激光SE图形；
图13为图12中激光掺杂区的局部放大图。
图中：1、正面电极；2、副栅；3、主栅；3-1、焊点；3-2、细主栅；3-2-1、侧部细主栅；3-2-2、直线细主栅；3-3、边缘鱼叉细主栅；4、钢丝网横向钢丝；5、钢丝网纵向钢丝；6、纵横钢丝结点；7、副栅线印刷区域；8、副栅线印刷区域激光切除的横向钢丝；9-1、直线型鱼叉主栅印刷区域；9-2、S型鱼叉主栅印刷区域；10、硅片基体；11、正面 发射极；11-1、浅掺杂区；11-2、重掺杂区；12、正面钝化及减反射层；13、正面氧化层；14、背面钝化层；15、背面副栅电极；16、副栅激光掺杂区；16-1、激光光斑。
具体实施方式
针对目前正面电极主栅与焊带连接后易发生副栅断裂，或影响主栅电流汇集效果，从而影响产品品质及可靠性的问题，本申请通过对正面电极的主栅结构进行优化设计，即将其设计为由连接各相邻焊点之间的直线细主栅3-2-2以及位于直线细主栅3-2-2两侧的侧部细主栅3-2-1组成的复合型结构，从而可以在有效保证细主栅与焊带连接收集电流效果的基础上，防止副栅在主栅焊接处发生断裂，即克服现有正面电极的细主栅与焊带焊接对电池及其组件的影响，提高了电池及其组件的品质和可靠性。其中，侧部细主栅3-2-1相对于焊点3-1向外发散设置，两侧部细主栅3-2-1之间的间距W2大于焊点3-1的宽度，且侧部细主栅3-2-1可以采用直线也可以采用曲线，优选为直线。
目前，无网结网版主要采用激光切除去丝的方式，该方法具备制版效率高、成品率高，同时无需改变正面电极图形等优点，逐步成为主流。本申请通过将副栅采用无网结网版印刷而成，从而可以消除副栅线条上的钢丝网布中经线和纬线交接的网结，有效改善丝网印刷银浆的透墨性和栅线线条3D形貌的高低起伏。但因为钢丝网布中经线和纬线的固有结构特点，在实现副栅线条上无网结的同时，难以在维持钢丝网张力及形变要求的条件下，在垂直于副栅的主栅位置，以及垂直或斜交叉副栅的主栅鱼叉位置实现无网结。在无网结推广过程中，由于搭配塑性更优、流动性更弱的银浆，在主栅区网结位置极易形成缺印，从而影响电流收集效果情况下，长期环境老化后，对产品品质和可靠性也有严重影响。而本申请通过对主栅的结构进行优化设计，通过无网结技术与主栅结构的优化配合，从而还可以解决无网结技术存在的上述问题，有利于进一步保证电池及其组件的品质和可靠性。
为进一步理解本申请的技术方案，下面结合具体实施例，以单晶P型硅片为例对本申请进行说明。
实施例1
结合图2-图5，本实施例的一种太阳能电池的正面电极，其主栅3包括细主栅3-2以及位于细主栅3-2上间隔分布的焊点3-1，相邻焊点3-1之间的细主栅3-2包括连接两焊点的直线细主栅3-2-2，以及位于直线细主栅3-2-2两侧的侧部细主栅3-2-1。
实施例2
本实施例的一种太阳能电池的正面电极，其结构基本同实施例1，具体的，本实施例中直线细主栅3-2-2及侧部细主栅3-2-1的宽度均为0.06±0.04mm，且侧部细主栅3-2-1 相对于焊点3-1向外发散设置，两侧部细主栅3-2-1之间的间距W2大于焊点3-1的宽度，其中相邻焊点3-1之间的侧部细主栅3-2-1可以由直线或曲线组成。
实施例3
本实施例的一种太阳能电池的正面电极，其结构基本同实施例2，更进一步的，如图2、图3所示，本实施例中相邻焊点3-1之间的侧部细主栅3-2-1由曲线组成。
实施例4
本实施例的一种太阳能电池的正面电极，其结构基本同实施例3，其区别主要在于：本实施例中相邻焊点3-1之间的侧部细主栅3-2-1由直线组成，如图4、图5所示，当侧部细主栅3-2-1为平行于直线细主栅3-2-2的直线，其两端通过过渡连接线与焊点3-1相连时效果最好。进一步优选为直线细主栅3-2-2的两端分别连接两焊点3-1的中心区域，且两侧部细主栅3-2-1关于直线细主栅3-2-2对称分布，即不同焊点之间的直线细主栅3-2-2共线。
实施例5
本实施例的一种太阳能电池的正面电极，其结构基本同实施例4，其区别主要在于：本实施例中的副栅2采用无网结网版印刷而成，且细主栅3-2的两端设有边缘鱼叉细主栅3-3，该边缘鱼叉细主栅3-3采用S型曲线设计。结合图7、图8，通过直线型鱼叉主栅印刷区域9-1与S型鱼叉主栅印刷区域9-2的对比可得，采用S型曲线设计可以有效降低80％以上的鱼叉主栅区的钢丝网纵横钢丝形成的网结，有利于进一步提高电池产品的品质和可靠性。
本实施例的正面电极的制作方法，主栅3和副栅2采用分步印刷工艺，具体的，主栅区印刷时是将焊点3-1与细主栅3-2进行同步印刷，副栅区印刷时是将副栅2与边缘鱼叉细主栅3-3进行同步印刷，且副栅区印刷时采用无网结网版，相邻副栅2的栅线间距为1.00-1.32mm，副栅2线宽为10-26μm。
实施例6
结合图11，本实施例的一种高效高可靠性PERC太阳能电池，包括自下而上设置的背面副栅电极15、背面钝化层14、硅片基体10、正面发射极11和正面钝化及减反射层12，其中正面电极1位于正面钝化及减反射层12的正表面上方并与正面发射极11形成欧姆接触，正面电极1的结构同实施例5。结合图11，本实施例的太阳能电池的制作方法，具体包括以下步骤：
1、制绒：采用单晶P型硅片基体10，用碱进行正面和背面制绒形成绒面结构。
2、扩散：将制绒后硅片，用三氯氧磷和硅片在高温下进行反应，使正面扩散形成PN发射结(即正面发射极11)。扩散后正表面薄层的方块电阻为160Ω/□之间。
3、激光SE：利用扩散后的磷硅玻璃为磷源，在扩散后硅片的正面且对应正电极栅线的金属化区域进行激光掺杂，形成重掺杂区11-2，从而在硅片正面实现选择发射极的结构(重掺杂区11-2、浅掺杂区11-1)。重掺杂区的方块电阻为60Ω/□之间。如图12所示，激光SE仅在正电极图形副栅处进行掺杂，相比常规激光图形，取消主栅区的激光掺杂，即只存在副栅激光掺杂区16，从而增加了浅扩区的面积，降低了该区域因重掺杂和激光过程引起的表面复合，提升了短波效应，有利于进一步提升了电池片的转换效率。如图13所示，为保证正电极和激光重掺杂区的套印精度和规模化生产时良率的稳定性，激光SE的光斑采用正方形或长方形的方式，宽度在90-110μm，激光光斑16-1之间的间距0-10μm之间不等。
4、热氧：将激光SE后硅片通氧进行氧化。
5、去PSG：将热氧化后硅片，用HF去除背面及周边PSG。
6、碱抛：将去PSG后的硅片进行背面和边缘抛光，正面去PSG。
7、氧化退火：将碱抛后的硅片进行氧化及退火处理，形成正面氧化层13。
8、背面沉积钝化膜：在退火后的硅片背面制备钝化膜，背面钝化层14。
9、正面沉积减反膜：在硅片的正面制备钝化及减反射层12。
10、背面激光：在背面制备了钝化膜的硅片上进行激光开孔。
11、背电极印刷：在正反面进行了激光开孔后硅片上丝网印刷制备背电极。
12、背面副栅印刷：在印刷背电极硅片上丝网印刷背面副栅电极15。
13、正电极主栅区印刷：采用固含量高、高可焊性、不烧穿氮化硅的正银浆料(固含量为80-95％、上锡面积大于80％、拉力均值大于1.0N，本实施例采用聚合M3M-FB07-6)，在印刷了背面铝栅线的硅片上丝网印刷制备正电极主栅，主栅图形采用主栅焊点和细主栅(图9)的方式。主栅采用大于等于9条以上的多主栅，各条细主栅的宽度为0.05mm，该细主栅可以采用竹节渐变设计，渐变规格为0.03-0.1mm。
14、正电极副栅区印刷：采用无网结网板，匹配高宽比优、烧穿氮化硅的无网结正银浆料(高宽比35％以上，本实施例采用聚合CSP-M3D-S6009V229)，在印刷了正电极主栅的硅片上丝网印刷制备正电极副栅：结合图6，采用激光切除去丝等的方式去除副栅线印刷区域7与副栅平行的钢丝(即副栅线印刷区域激光切除的横向钢丝8)，消除副栅区原本存在的钢丝网纵向钢丝5与钢丝网横向钢丝4形成的网结(即纵横钢丝结点6)。此步 骤图形采用对应主栅图形的副栅和鱼叉细主栅(图10)的方式；副栅采用栅线间距1.22mm，平行且均匀的排布，副栅设计线宽为22μm，鱼叉细主栅(图7)采用S型曲线设计。
15、烧结：将印刷正面电极的硅片进行共烧结，烧结峰值温度可根据需要在720-800℃之间进行选择，本实施例取区750℃。
16、电注入、成品：将烧结后的电池片进行电注入处理，然后经测试、分选后包装入库。
实施例7
本实施例的一种太阳能电池，其结构同实施例6，该电池制作时，相邻副栅2的栅线间距可缩小为1.13mm，副栅2线宽可降为20μm，烧结温度为750℃。
实施例8
本实施例的一种太阳能电池，其结构同实施例6，该电池制作时，相邻副栅2的栅线间距可缩小为1.32mm，副栅2线宽可降为24μm，烧结温度为760℃。
实施例9
本实施例的一种太阳能电池，其结构同实施例6，该电池制作时，相邻副栅2的栅线间距可缩小为1.00mm，副栅2线宽可降为10μm，烧结温度为755℃。
结合上述实施例，本申请通过多条复合型细主栅结构及S型鱼叉细主栅结构的设计、副栅的无网结网版印刷工艺以及主栅区与副栅区的分步印刷，从而可以实现PERC电池片光电转换效率0.1％以上的提升，正银耗量降低3-10mg，打破了副栅浆料对主栅区过高拉力需求的限制，可以根据需要对主栅区与副栅区的浆料进行分别选择，改善了副栅区的金属化性能，可以将副栅线设计线宽缩小到10-26μm，并将副栅栅线间距有效降低到1.00-1.32mm。

Claims (14)

  1. 一种太阳能电池的正面电极，包括主栅(3)，所述主栅(3)包括细主栅(3-2)以及位于细主栅(3-2)上间隔分布的焊点(3-1)，其中，相邻焊点(3-1)之间的细主栅(3-2)包括连接两焊点的直线细主栅(3-2-2)，以及位于直线细主栅(3-2-2)两侧的侧部细主栅(3-2-1)。
  2. 根据权利要求1所述的太阳能电池的正面电极，其中，所述直线细主栅(3-2-2)及侧部细主栅(3-2-1)的宽度均为0.06±0.04mm。
  3. 根据权利要求1所述的太阳能电池的正面电极，其中，所述侧部细主栅(3-2-1)相对于焊点(3-1)发散设置，且两侧部细主栅(3-2-1)之间的间距W2大于焊点(3-1)的宽度。
  4. 根据权利要求3所述的太阳能电池的正面电极，其中，相邻焊点(3-1)之间的侧部细主栅(3-2-1)由直线或曲线组成。
  5. 根据权利要求3所述的太阳能电池的正面电极，其中，相邻焊点(3-1)之间的侧部细主栅(3-2-1)为平行于直线细主栅(3-2-2)的直线，其两端通过过渡连接线与焊点(3-1)相连。
  6. 根据权利要求1-5中任一项所述的太阳能电池的正面电极，其中，所述直线细主栅(3-2-2)的两端分别连接两焊点(3-1)的中心区域，且两侧部细主栅(3-2-1)关于直线细主栅(3-2-2)对称分布。
  7. 根据权利要求1-5中任一项所述的太阳能电池的正面电极，还包括副栅(2)，所述副栅(2)采用无网结网版印刷而成；所述细主栅(3-2)的两端设有边缘鱼叉细主栅(3-3)，该边缘鱼叉细主栅(3-3)采用S型曲线设计。
  8. 根据权利要求7所述的太阳能电池的正面电极，其中，相邻副栅(2)的栅线间距为1.00-1.32mm，副栅(2)线宽为10-26μm。
  9. 一种制作根据权利要求1-8中任一项所述的太阳能电池的正面电极的方法，其中，主栅(3)和副栅(2)采用分步印刷工艺。
  10. 根据权利要求9所述的方法，其中，主栅区印刷时是将焊点(3-1)与细主栅(3-2)进行同步印刷，副栅区印刷时是将副栅(2)与边缘鱼叉细主栅(3-3)进行同步印刷。
  11. 根据权利要求10所述的方法，其中，将所述边缘鱼叉细主栅(3-3)设置在所述细主栅(3-2)的两端。
  12. 根据权利要求10所述的方法，其中，所述边缘鱼叉细主栅(3-3)采用S型曲线 设计。
  13. 根据权利要求9所述的方法，其中，副栅区印刷时采用无网结网版，相邻副栅(2)的栅线间距为1.00-1.32mm，副栅(2)线宽为10-26μm。
  14. 一种太阳能电池，包括根据权利要求1-8中任一项所述的正面电极(1)。
PCT/CN2021/140577 2020-12-30 2021-12-22 太阳能电池及其正面电极和制作方法 Ceased WO2022143352A1 (zh)

Priority Applications (3)

Application Number Priority Date Filing Date Title
EP21914089.4A EP4099403A4 (en) 2020-12-30 2021-12-22 SOLAR CELL AND ASSOCIATED FRONT ELECTRODE, AND MANUFACTURING METHOD
US17/908,483 US20230343878A1 (en) 2020-12-30 2021-12-22 Solar cell and front electrode thereof, and manufacturing method
AU2021414045A AU2021414045A1 (en) 2020-12-30 2021-12-22 Solar cell and front electrode thereof, and manufacturing method

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
CN202011621762.5 2020-12-30
CN202011621762.5A CN112635586A (zh) 2020-12-30 2020-12-30 一种高效高可靠性perc太阳能电池及其正面电极和制作方法

Publications (1)

Publication Number Publication Date
WO2022143352A1 true WO2022143352A1 (zh) 2022-07-07

Family

ID=75287359

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/CN2021/140577 Ceased WO2022143352A1 (zh) 2020-12-30 2021-12-22 太阳能电池及其正面电极和制作方法

Country Status (5)

Country Link
US (1) US20230343878A1 (zh)
EP (1) EP4099403A4 (zh)
CN (1) CN112635586A (zh)
AU (1) AU2021414045A1 (zh)
WO (1) WO2022143352A1 (zh)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP4418331A1 (en) * 2023-02-14 2024-08-21 Zhejiang Jinko Solar Co., Ltd. Photovoltaic cell and photovoltaic module
US12080819B2 (en) 2022-10-24 2024-09-03 Zhejiang Jinko Solar Co., Ltd. Solar cell and photovoltaic module

Families Citing this family (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN112635586A (zh) * 2020-12-30 2021-04-09 通威太阳能（成都）有限公司 一种高效高可靠性perc太阳能电池及其正面电极和制作方法
CN113421947A (zh) * 2021-06-21 2021-09-21 苏州潞能能源科技有限公司 双面太阳能电池制作工艺
CN117936599B (zh) 2021-08-27 2025-11-04 晶科能源股份有限公司 一种光伏电池及光伏组件
CN216015381U (zh) 2021-10-29 2022-03-11 晶科能源股份有限公司 电极结构、太阳能电池及光伏组件
CN113903818A (zh) * 2021-11-05 2022-01-07 通威太阳能（成都）有限公司 一种perc电池的se激光掺杂图形和perc电池制备方法
WO2023123278A1 (zh) 2021-12-30 2023-07-06 深圳市元征科技股份有限公司 车辆诊断方法、诊断连接器以及诊断设备
CN114709276A (zh) * 2022-03-31 2022-07-05 上饶捷泰新能源科技有限公司 分步印刷太阳能电池的方法及太阳能电池
CN114695574A (zh) * 2022-04-27 2022-07-01 浙江爱康光电科技有限公司 一种无主栅的异质结电池片
CN218215317U (zh) * 2022-08-03 2023-01-03 隆基绿能科技股份有限公司 一种太阳能电池和太阳能组件
CN115763586A (zh) * 2022-12-29 2023-03-07 江苏润阳世纪光伏科技有限公司 一种用于TOP-Con电池片主副栅搭接电阻测量的网板及方法
CN117199152B (zh) * 2023-09-11 2024-06-04 淮安捷泰新能源科技有限公司 一种太阳能电池及其制备方法
CN117238985A (zh) 2023-11-16 2023-12-15 浙江晶科能源有限公司 太阳能电池及光伏组件
CN117712232B (zh) * 2024-02-05 2024-05-07 晶科能源(海宁)有限公司 太阳能电池制备方法、太阳能电池及其光伏组件
CN118073469B (zh) * 2024-02-18 2025-06-03 天合光能股份有限公司 太阳能电池及其制备方法和光伏组件
CN120936132B (zh) * 2025-10-13 2026-03-31 晶科能源(海宁)有限公司 太阳能电池及其制备方法

Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN106229356A (zh) * 2016-08-31 2016-12-14 连云港神舟新能源有限公司 一种多主栅双面太阳电池组件
WO2018207312A1 (ja) * 2017-05-11 2018-11-15 三菱電機株式会社 太陽電池セルおよび太陽電池セルの製造方法
CN111055589A (zh) * 2019-12-23 2020-04-24 晋能光伏技术有限责任公司 一种太阳能电池印刷网版
CN210478084U (zh) * 2019-06-27 2020-05-08 苏州阿特斯阳光电力科技有限公司 一种电池片及网版
CN210805806U (zh) * 2019-09-26 2020-06-19 通威太阳能(眉山)有限公司 一种可靠性高的多主栅单晶高效电池印刷网版
CN112635586A (zh) * 2020-12-30 2021-04-09 通威太阳能（成都）有限公司 一种高效高可靠性perc太阳能电池及其正面电极和制作方法
CN213583811U (zh) * 2020-12-30 2021-06-29 通威太阳能（成都）有限公司 一种高效高可靠性perc太阳能电池及其正面电极

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5025135B2 (ja) * 2006-01-24 2012-09-12 三洋電機株式会社 光起電力モジュール
JP4294048B2 (ja) * 2006-11-29 2009-07-08 三洋電機株式会社 太陽電池モジュール
EP2278623A2 (en) * 2007-12-11 2011-01-26 Evergreen Solar, Inc. Photovoltaic panel and cell with fine fingers and method of manufacturing the same
WO2013039158A1 (ja) * 2011-09-13 2013-03-21 京セラ株式会社 太陽電池モジュール
US10383207B2 (en) * 2011-10-31 2019-08-13 Cellink Corporation Interdigitated foil interconnect for rear-contact solar cells
DE102014118332A1 (de) * 2014-12-10 2016-06-16 Solarworld Innovations Gmbh Photovoltaikmodul
WO2016131222A1 (zh) * 2015-02-16 2016-08-25 保定市易通光伏科技有限公司 光伏组件及其制造方法
CN105529373B (zh) * 2016-01-28 2018-01-16 黄河水电光伏产业技术有限公司 一种晶硅太阳能电池的正面电极
CN206040654U (zh) * 2016-08-31 2017-03-22 连云港神舟新能源有限公司 一种多主栅双面太阳电池组件
US11462652B2 (en) * 2016-09-27 2022-10-04 Lg Electronics Inc. Solar cell and solar cell panel including the same
CN207038540U (zh) * 2017-06-22 2018-02-23 通威太阳能（合肥）有限公司 一种分步印刷多晶电池片
CN107946385A (zh) * 2017-12-25 2018-04-20 浙江晶科能源有限公司 一种新型多主栅电池片及应用该类电池片的光伏组件
CN208189601U (zh) * 2018-06-11 2018-12-04 泰州隆基乐叶光伏科技有限公司 一种多主栅电池的正面主栅结构及太阳能电池
CN109545862A (zh) * 2018-10-08 2019-03-29 江西展宇新能源股份有限公司 一种太阳能电池及其制作方法

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN106229356A (zh) * 2016-08-31 2016-12-14 连云港神舟新能源有限公司 一种多主栅双面太阳电池组件
WO2018207312A1 (ja) * 2017-05-11 2018-11-15 三菱電機株式会社 太陽電池セルおよび太陽電池セルの製造方法
CN210478084U (zh) * 2019-06-27 2020-05-08 苏州阿特斯阳光电力科技有限公司 一种电池片及网版
CN210805806U (zh) * 2019-09-26 2020-06-19 通威太阳能(眉山)有限公司 一种可靠性高的多主栅单晶高效电池印刷网版
CN111055589A (zh) * 2019-12-23 2020-04-24 晋能光伏技术有限责任公司 一种太阳能电池印刷网版
CN112635586A (zh) * 2020-12-30 2021-04-09 通威太阳能（成都）有限公司 一种高效高可靠性perc太阳能电池及其正面电极和制作方法
CN213583811U (zh) * 2020-12-30 2021-06-29 通威太阳能（成都）有限公司 一种高效高可靠性perc太阳能电池及其正面电极

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
See also references of EP4099403A4

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US12080819B2 (en) 2022-10-24 2024-09-03 Zhejiang Jinko Solar Co., Ltd. Solar cell and photovoltaic module
EP4418331A1 (en) * 2023-02-14 2024-08-21 Zhejiang Jinko Solar Co., Ltd. Photovoltaic cell and photovoltaic module
US12302647B2 (en) 2023-02-14 2025-05-13 Zhejiang Jinko Solar Co., Ltd. Photovoltaic cell and photovoltaic module

Also Published As

Publication number Publication date
AU2021414045A1 (en) 2022-09-29
US20230343878A1 (en) 2023-10-26
EP4099403A4 (en) 2024-03-13
CN112635586A (zh) 2021-04-09
EP4099403A1 (en) 2022-12-07

Similar Documents

Publication Publication Date Title
WO2022143352A1 (zh) 太阳能电池及其正面电极和制作方法
JP7401700B2 (ja) 背面接触電池の電極構造、電池、モジュール及び電池システム
JP7239912B1 (ja) 太陽光発電モジュール構造
CN112234109A (zh) 一种太阳能电池及其正面电极、制备方法和应用
JP7137031B1 (ja) 太陽電池及び光起電力モジュール
CN213583811U (zh) 一种高效高可靠性perc太阳能电池及其正面电极
CN205985031U (zh) 高效太阳能无主栅线晶硅电池片
CN214313219U (zh) 一种太阳能电池及其正面电极
CN216120314U (zh) 一种高效叠瓦太阳能电池及其正面电极
CN216354236U (zh) Se电池片及光伏组件
CN202633328U (zh) 一种可节约银浆的太阳电池
CN113665233B (zh) 一种hjt电池丝网及其印刷方法
CN214313222U (zh) 一种双面电池及其背面电极
CN117199152A (zh) 一种太阳能电池及其制备方法
CN213184316U (zh) 异质结太阳能电池及光伏组件
CN116845118A (zh) 一种电池片、光伏组件以及焊接工装
CN223125231U (zh) 太阳电池的电极结构、太阳电池片及光伏组件
CN221080027U (zh) 一种太阳能电池
CN118448481B (zh) 一种太阳电池及其制备方法
CN218849502U (zh) 异质结太阳能电池的主栅网版
CN222803335U (zh) 一种无主栅太阳能电池以及光伏组件
CN223125232U (zh) 一种叠栅电池片导电种子层结构
CN219203169U (zh) 背接触电池片
CN219371040U (zh) 一种无主栅电池片
CN221125954U (zh) 太阳能电池片及太阳能电池组件

Legal Events

Date Code Title Description
121 Ep: the epo has been informed by wipo that ep was designated in this application

Ref document number: 21914089

Country of ref document: EP

Kind code of ref document: A1

ENP Entry into the national phase

Ref document number: 2021914089

Country of ref document: EP

Effective date: 20220830

ENP Entry into the national phase

Ref document number: 2021414045

Country of ref document: AU

Date of ref document: 20211222

Kind code of ref document: A

NENP Non-entry into the national phase

Ref country code: DE