WO2023010933A1 - 一种钙钛矿电池及光伏组件 - Google Patents

一种钙钛矿电池及光伏组件 Download PDF

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WO2023010933A1
WO2023010933A1 PCT/CN2022/091968 CN2022091968W WO2023010933A1 WO 2023010933 A1 WO2023010933 A1 WO 2023010933A1 CN 2022091968 W CN2022091968 W CN 2022091968W WO 2023010933 A1 WO2023010933 A1 WO 2023010933A1
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layer
perovskite
refractive index
light
optical adjustment
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PCT/CN2022/091968
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English (en)
French (fr)
Inventor
解俊杰
吴兆
徐琛
李子峰
刘童
孙朱行
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Longi Green Energy Technology Co Ltd
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Longi Green Energy Technology Co Ltd
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Priority to AU2022324254A priority Critical patent/AU2022324254B2/en
Priority to US18/294,872 priority patent/US20240251575A1/en
Priority to EP22851652.2A priority patent/EP4369885A4/en
Publication of WO2023010933A1 publication Critical patent/WO2023010933A1/zh
Anticipated expiration legal-status Critical
Priority to AU2025205587A priority patent/AU2025205587A1/en
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
    • H10K30/80—Constructional details
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
    • H10K30/40—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation comprising a p-i-n structure, e.g. having a perovskite absorber between p-type and n-type charge transport layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K39/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic radiation-sensitive element covered by group H10K30/00
    • H10K39/10—Organic photovoltaic [PV] modules; Arrays of single organic PV cells
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
    • H10K30/50—Photovoltaic [PV] devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
    • H10K30/80—Constructional details
    • H10K30/81—Electrodes
    • H10K30/82—Transparent electrodes, e.g. indium tin oxide [ITO] electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/50—Organic perovskites; Hybrid organic-inorganic perovskites [HOIP], e.g. CH3NH3PbI3
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/549—Organic PV cells

Definitions

  • the present application relates to the field of solar photovoltaic technology, in particular to a perovskite cell and a photovoltaic module.
  • Perovskite cell is a solar cell with simple structure, high efficiency, and low cost. Its photoelectric conversion efficiency can reach more than 25%, and it is the most promising new type of solar cell at present.
  • perovskite batteries can be made into transparent/semi-transparent batteries, which can be used in the field of construction, for example, as glass for buildings.
  • the perovskite material used as the light-absorbing layer in the perovskite cell has a band gap range of 1.5-3.0 electron volts, the corresponding wavelength of light that can be absorbed is 414-820 nanometers, which basically covers the entire visible Spectrum, that is, the light-absorbing layer in the perovskite cell can absorb the visible light in the sun's rays and convert it into photo-generated carriers, thereby generating electric current.
  • the band gap of the perovskite material can be continuously adjusted by changing the type and ratio of the halide ions in the perovskite material, thereby ensuring that the perovskite material can absorb visible light of different colors, that is, the color of the perovskite battery can be Continuous adjustment in the color range corresponding to visible light makes perovskite cells color-tunable when applied in the construction field.
  • This application provides a perovskite cell and a photovoltaic module, aiming to solve the problem of how to ensure the heat preservation and cooling of the building when the perovskite cell is used as the glass of the building.
  • the embodiment of the present application provides a perovskite battery, and the perovskite battery includes:
  • Perovskite light absorbing layer Perovskite light absorbing layer, first carrier transport layer, second carrier transport layer, first transparent electrode layer, second transparent electrode layer and optical adjustment layer;
  • the first carrier transport layer is arranged on the light-facing surface of the perovskite light absorbing layer
  • the second carrier transport layer is arranged on the backlight surface of the perovskite light absorbing layer
  • the first The carrier selectivities corresponding to the first carrier transport layer and the second carrier transport layer are opposite;
  • the first transparent electrode layer is arranged on the side of the first carrier transport layer away from the perovskite light absorption layer, and the second transparent electrode layer is arranged on the side of the second carrier transport layer away from the perovskite light absorption layer.
  • the optical adjustment layer is disposed between the second carrier transport layer and the second transparent electrode layer, the second transparent electrode layer is electrically connected to the second carrier transport layer, the The transmittance of the optical adjustment layer for visible light is greater than or equal to a preset transmittance, and the reflectance of the optical adjustment layer for infrared light is greater than or equal to a preset reflectance.
  • the preset transmittance is 70-90%, and the preset reflectance is 60-80%.
  • the preset transmittance is 80%, and the preset reflectance is 70%.
  • the optical adjustment layer includes a metal infrared reflective layer, and a first protective layer and a second protective layer respectively disposed on both sides of the metallic infrared reflective layer.
  • the metallic infrared reflective layer comprises: at least one of silver, aluminum and gold, and the metallic infrared reflective layer has a thickness of 1-30 nanometers;
  • the first protective layer and the second protective layer include: at least one of aluminum oxide, silicon oxide and silicon nitride, and the thickness of the first protective layer and the second protective layer is 1-100 nanometers .
  • the thickness of the metal infrared reflective layer is less than 10 nanometers, and the thickness of the first protective layer and the second protective layer is less than 30 nanometers.
  • the optical adjustment layer includes at least one low refractive index adjustment layer and at least one high refractive index adjustment layer;
  • the at least one low-refractive-index adjusting layer and the at least one high-refractive-index adjusting layer are spaced apart.
  • the low-refractive-index adjusting layer includes a low-refractive-index material whose refractive index is less than or equal to a first preset refractive index
  • the high-refractive-index adjusting layer includes a high-refractive-index material whose refractive index is greater than or equal to a second preset refractive index.
  • a refractive index material, the first preset refractive index is less than or equal to the second preset refractive index;
  • the thicknesses of the low refractive index adjustment layer and the high refractive index adjustment layer according to the wavelength of infrared light and the preset reflectivity, And the number of the low refractive index adjusting layer and the high refractive index adjusting layer.
  • the low refractive index material includes: at least one of silicon oxide, silicon oxynitride, sodium fluoride, lithium fluoride, magnesium fluoride and calcium fluoride;
  • the high refractive index material includes: silicon oxynitride, aluminum oxynitride, tungsten sulfide, molybdenum sulfide, lead sulfide, boron carbide, silicon carbide, aluminum antimonide, gallium antimonide, indium antimonide, bismuth selenide, molybdenum selenide , lead selenide, tungsten selenide, zinc telluride, lead telluride and molybdenum telluride at least one.
  • the refractive index of the low refractive index adjusting layer is less than or equal to 1.7
  • the refractive index of the high refractive index adjusting layer is greater than or equal to 2.5
  • the low refractive index adjusting layer and the high refractive index adjusting layer Quantity is greater than or equal to 1 and less than or equal to 5.
  • the perovskite battery further includes: an up-conversion light-emitting layer;
  • the up-conversion light-emitting layer is disposed between the second carrier transport layer and the optical adjustment layer.
  • the thickness of the up-conversion light-emitting layer is less than or equal to 1000 nanometers
  • the bandgap of the up-conversion light-emitting layer is greater than or equal to 3.0 electron volts.
  • the perovskite battery also includes: a conductive structure
  • the optical adjustment layer is provided with a through hole penetrating the optical adjustment layer, the conductive structure is arranged in the through hole of the optical adjustment layer, one end of the conductive structure is connected to the second carrier transport layer connected, the other end of the conductive structure is connected to the second transparent electrode layer.
  • the conductive structure includes: at least one of indium-doped tin oxide, aluminum-doped zinc oxide, metal materials and mixed materials containing multiple metals.
  • the perovskite light absorbing layer comprises: at least one of organic-inorganic halide perovskite, all-inorganic perovskite, lead-free perovskite and double perovskite;
  • the bandgap of the perovskite light absorbing layer is greater than or equal to 1.5 electron volts.
  • the first transparent electrode layer and the second transparent electrode layer comprise: at least one of indium tin oxide conductive glass, fluorine-doped tin dioxide conductive glass and aluminum-doped zinc oxide conductive glass ;
  • the visible light transmittance of the first transparent electrode layer and the second transparent electrode layer is greater than 90%, and the sheet resistance of the second transparent electrode layer is less than or equal to 10 ohms/square.
  • an embodiment of the present application provides a photovoltaic module, the photovoltaic module comprising any one of the aforementioned perovskite cells.
  • the present application has the following beneficial effects:
  • the transparent perovskite battery composed of the first transparent electrode layer and the second transparent electrode layer can be applied to the field of construction.
  • An optical adjustment layer is arranged between the second carrier transport layer and the second transparent electrode layer in the battery. Since the transmittance of the optical adjustment layer for visible light is greater than or equal to the preset transmittance, the perovskite battery can be ensured efficiency and the daylighting needs of buildings.
  • the energy of infrared light accounts for more than 50% of the energy of the entire solar spectrum, it is one of the main factors that cause the temperature inside the building to increase or decrease.
  • the reflectivity of the optical adjustment layer for infrared light is greater than or equal to the predetermined When the reflectivity is set, it can ensure the heat preservation and cooling needs of the building, thereby reducing the energy loss of the building due to the heat preservation and cooling needs.
  • Fig. 1 shows the structural representation of a kind of perovskite cell in the embodiment of the present application
  • Fig. 2 shows a schematic diagram of the light path of an optical adjustment layer in the embodiment of the present application
  • Fig. 3 shows a schematic diagram of the light path of another optical adjustment layer in the embodiment of the present application
  • Figure 4 shows a schematic structural view of an optical adjustment layer in an embodiment of the present application
  • Figure 5 shows a schematic structural view of another optical adjustment layer in the embodiment of the present application.
  • Fig. 6 shows the structural representation of another kind of perovskite cell in the embodiment of the present application.
  • Fig. 7 shows the reflectivity graph of a kind of metal infrared reflective layer in the embodiment of the present application
  • FIG. 8 shows a graph of reflectivity of an optical adjustment layer in an embodiment of the present application.
  • 10-perovskite light absorption layer 20-first carrier transport layer, 30-first carrier transport layer, 40-first transparent electrode layer, 50-first transparent electrode layer, 60-optical adjustment layer , 61-metal infrared reflective layer, 62-first protective layer, 63-first protective layer, 64-low refractive index adjustment layer, 65-high refractive index adjustment layer, 70-conductive structure, 80-up conversion light emitting layer.
  • a perovskite battery, a production method, and a photovoltaic module provided by the present application will be described in detail below by enumerating several specific examples.
  • Fig. 1 shows a schematic structural view of a perovskite battery provided in an embodiment of the present application.
  • the perovskite battery may include: a perovskite light absorbing layer 10, a first carrier transport layer 20, a second Two carrier transport layers 30 , a first transparent electrode layer 40 , a second transparent electrode layer 50 and an optical adjustment layer 60 .
  • the perovskite battery is a solar cell using perovskite material as a light-absorbing material, that is, the perovskite material is used as the light-absorbing layer in the battery to form a perovskite light-absorbing layer 10, and the perovskite battery belongs to the third generation of solar energy. Batteries, also known as new concept solar cells.
  • the general formula of perovskite materials is ABX3, where A is a +1-valent cation, B is a +2-valent cation, and X is a halide ion, usually chloride (Cl - ), bromide (Br - ) and iodide (I - ) in one or more.
  • Perovskite materials with different halide ions have different band gaps.
  • the perovskite materials with halide ions I - have the smallest band gap (generally about 1.5 electron volts), and the perovskite materials with halide ions Cl - have the lowest band gap.
  • the gap is the largest (generally around 3 electron volts).
  • the perovskite material can contain two kinds of mixed halide ions, and the mixing ratio can be continuously adjusted. Therefore, the band gap of the perovskite material can be continuously adjusted in the range of 1.5-3 electron volts, corresponding to the absorbable light Its wavelength range is about 414-820 nanometers, basically covering the entire visible light spectrum.
  • the perovskite light-absorbing layer 10 can absorb sunlight with a wavelength range between 414-820 nanometers, and generate current-carrying light in the perovskite light-absorbing layer 10. sons (electrons and holes).
  • the first carrier transport layer 20 is arranged on the light-facing surface of the perovskite light absorbing layer 10
  • the second carrier transport layer 30 is arranged on the backlight surface of the perovskite light absorbing layer 10
  • the first carrier The carrier selectivity corresponding to the carrier transport layer 20 and the second carrier transport layer 30 is opposite
  • the first transparent electrode layer 40 is arranged on the side of the first carrier transport layer 20 away from the perovskite light absorption layer 10
  • the second transparent electrode layer 50 is disposed on the side of the second carrier transport layer 30 away from the perovskite light absorbing layer 10 , and the second transparent electrode layer 50 is electrically connected to the second carrier transport layer 30 .
  • the carrier selectivities corresponding to the first carrier transport layer 20 and the second carrier transport layer 30 are opposite. If the first carrier transport layer 20 has electron selectivity, the second carrier transport layer 30 has hole selectivity, after the perovskite light absorbing layer 10 absorbs sunlight and generates carriers, the electron carriers in the carriers are selected by the first carrier transport layer 20 and transported to the first The transparent electrode layer 40 is then collected by the first transparent electrode layer 40, and the hole carriers in the carriers are selected by the second carrier transport layer 30 and transported to the second transparent electrode layer 50, and then are collected by the second transparent electrode layer 40. The electrode layer 50 collects, thereby realizing the separation of carriers in the perovskite light absorbing layer 10 .
  • the perovskite light absorbing layer 10 will carry The hole carriers in the carriers are selected by the first carrier transport layer 20 and transported to the first transparent electrode layer 40, and then collected by the first transparent electrode layer 40, and the electron carriers in the carriers are collected by the first transparent electrode layer 40.
  • the second carrier transport layer 30 is selected and transported to the second transparent electrode layer 50 , and then collected by the second transparent electrode layer 50 , so as to realize the separation of carriers in the perovskite light absorption layer 10 .
  • perovskite cells when perovskite cells are applied in the field of construction, such as glass or curtain walls of buildings, it is necessary to obtain transparent perovskite cells with a certain transmittance to sunlight. Therefore, perovskite cells
  • the electrode layer used to collect different carriers can be a transparent electrode layer.
  • a transparent electrode layer can be used to replace opaque electrode layers such as metal electrodes and carbon electrodes. Realize the transparency of perovskite cells and ensure the lighting of buildings.
  • the perovskite cell may further include: an optical adjustment layer 60, wherein the optical adjustment layer 60 is arranged between the second carrier transport layer 30 and the second transparent electrode layer 50, that is, the optical adjustment layer 60 is arranged on calcium Between the carrier transport layer and the electrode layer on the side away from the incident direction of sunlight in the titanite battery, and the transmittance of the optical adjustment layer 60 for visible light is greater than or equal to the preset transmittance. Therefore, after the visible light in the sunlight is absorbed by the perovskite light absorbing layer 10 , the remaining visible light can be transmitted through the optical adjustment layer 60 .
  • visible light is light with a wavelength of less than 760 nanometers, which plays a role in lighting the internal environment of buildings, while the energy of infrared light with a wavelength greater than or equal to 760 nanometers accounts for more than 50% of the energy of the entire sun’s rays.
  • This part of the sun's rays is invisible light, which cannot illuminate the internal environment of the building, but it is one of the main factors that cause the temperature inside the building to increase or decrease. It should be noted that there may be a certain gap between the wavelength limit values of visible light and infrared light in different standards and regulations.
  • the optical adjustment layer 60 can The transmittance of visible light is greater than or equal to a preset transmittance, and the reflectance of infrared light with a wavelength greater than or equal to 760 nanometers is greater than or equal to a preset reflectance.
  • the perovskite battery that needs to be installed on the building can reflect the infrared light in the sun's rays to the outside, which can greatly reduce Indoor cooling energy consumption; in winter, the internal temperature of the building is higher than the external temperature, and the room needs to be heated.
  • the perovskite battery that needs to be installed on the building can reflect the indoor infrared light to the room to prevent indoor heat loss, so that it can Significantly reduce indoor heating energy consumption.
  • the optical adjustment layer 60 disposed between the second carrier transport layer 30 and the second transparent electrode layer 50 in the perovskite cell have a reflectivity greater than or equal to a preset reflectivity for infrared light, so that when the sun After the visible light in the light is absorbed by the perovskite light-absorbing layer 10 , the infrared light in the remaining light can be reflected by the optical adjustment layer 60 when reaching the optical adjustment layer 60 , preventing the infrared light from being transmitted through the perovskite cell.
  • FIG. 2 shows a schematic diagram of a light path of an optical adjustment layer provided by an embodiment of the present application.
  • the incident light includes visible light and infrared light.
  • a part of visible light can be absorbed by the perovskite light-absorbing layer 10 in the perovskite cell for photoelectric conversion, and a part of visible light enters the room from the outside through the perovskite cell to illuminate the building; while most of the infrared light is not It belongs to the light that can be absorbed by the perovskite light-absorbing layer 10 in the perovskite cell, and cannot illuminate the internal environment of the building, but can only cause the temperature inside the building to increase or decrease.
  • the perovskite cell in the embodiment of the present application is used as the glass of the building, if the incident light is sunlight irradiated from the outside to the room, the visible light in the incident light passes through the perovskite light absorbing layer 10.
  • the transmittance of the optical adjustment layer 60 for visible light is greater than or equal to the preset transmittance, the remaining visible light can be transmitted through the optical adjustment layer 60 and enter the room, thereby ensuring the lighting and lighting of the building;
  • Most of the infrared light in the incident light does not belong to the light that can be absorbed by the perovskite light-absorbing layer 10, therefore, most of the infrared light in the incident light passes through the perovskite light-absorbing layer 10 to reach the optical adjustment layer 60
  • the reflectivity of the optical adjustment layer 60 for infrared light is greater than or equal to the preset reflectivity, the infrared light in the incident light is reflected by the optical adjustment layer 60 to go out of the room and fail to enter the room.
  • the perovskite cell containing the optical adjustment layer 60 can ensure that the perovskite cell can absorb visible light in the incident light and perform normal photoelectric conversion. At the same time, it can ensure that the building The lighting and lighting of objects, as well as ensuring that outdoor infrared light cannot penetrate the perovskite battery to enter the room, realize energy isolation, and prevent infrared light from bringing the hot outdoor temperature into the room, thereby reducing the cooling energy consumption inside the building.
  • Fig. 3 shows a schematic diagram of the light path of another optical adjustment layer provided by the embodiment of the present application.
  • the perovskite cell in the embodiment of the present application is used as the glass of the building, if the incident light is from When light is irradiated from indoors to outdoors, since the transmittance of the optical adjustment layer 60 for visible light is greater than or equal to the preset transmittance, the visible light part of the incident light can be transmitted through the optical adjustment layer 60 and directed to the perovskite At the same time, since the reflectivity of the optical adjustment layer 60 for infrared light is greater than or equal to the preset reflectivity, the infrared light in the incident light is reflected back into the room by the optical adjustment layer 60, but cannot be emitted outside.
  • the perovskite cell containing the optical adjustment layer 60 can ensure that the perovskite cell can absorb visible light in the incident light and perform normal photoelectric conversion, and at the same time, it can ensure that the building
  • the optical adjustment layer 60 in the perovskite cell only adjusts the infrared light in the incident light, avoids more infrared light from penetrating the perovskite cell, and has a certain transmittance to visible light, thereby ensuring The lighting and daylighting of the building are improved, and the impact on the light absorption process of the perovskite light absorbing layer 10 for visible light is avoided, thereby ensuring the conversion efficiency of the perovskite battery.
  • the preset transmittance can be the transmittance for visible light preset by the optical adjustment layer 60, so as to ensure that the perovskite light absorbing layer 10 in the perovskite cell has a higher conversion efficiency, for example, 70- 90%.
  • the preset reflectivity may be the preset reflectivity of the optical adjustment layer 60 for infrared light, so as to ensure that the perovskite cell has a certain insulating effect on infrared light, for example, 60-80%.
  • a perovskite battery includes: a perovskite light absorption layer, a first carrier transport layer, a second carrier transport layer, a first transparent electrode layer, and a second transparent electrode layer and an optical adjustment layer;
  • the first carrier transport layer is arranged on the light-facing surface of the perovskite light-absorbing layer
  • the second carrier-transport layer is arranged on the backlight surface of the perovskite light-absorbing layer
  • the first carrier transport layer layer and the second carrier transport layer have opposite carrier selectivities;
  • the first transparent electrode layer is set on the side of the first carrier transport layer away from the perovskite light absorption layer, and the second transparent electrode layer is set on the second
  • the second carrier transport layer is away from the side of the perovskite light absorption layer;
  • the optical adjustment layer is arranged between the second carrier transport layer and the second transparent electrode layer, and the transmittance of the optical adjustment layer for visible light is greater than or equal to the preset transmittance, and the reflectance of the optical adjustment layer
  • the transparent perovskite battery composed of the first transparent electrode layer and the second transparent electrode layer can be applied in the construction field, and the second carrier transport layer and the second transparent electrode layer in the perovskite battery An optical adjustment layer is arranged between them. Since the transmittance of the optical adjustment layer for visible light is greater than or equal to the preset transmittance, the efficiency of the perovskite cell and the lighting requirements of the building can be ensured. At the same time, because the energy of infrared light accounts for more than 50% of the energy of the entire solar spectrum, it is one of the main factors that cause the temperature inside the building to increase or decrease.
  • the reflectivity of the optical adjustment layer for infrared light is greater than or equal to the predetermined When the reflectivity is set, it can ensure the heat preservation and cooling needs of the building, thereby reducing the energy loss of the building due to the heat preservation and cooling needs.
  • the preset transmittance may be 80%, and the preset reflectivity may be 70%.
  • the visible light transmittance is greater than 80%, it can meet the lighting requirements of buildings, and there is no need to increase indoor lighting in the case of good sunlight during the day, which will not lead to an increase in additional lighting energy consumption; at the same time, when infrared light is reflected
  • the optical adjustment film can block most of the energy in the non-visible light region, and transmit it from the high temperature side to the low temperature side through the way of thermal radiation, that is, the indoor cooling energy consumption can be reduced when the outdoor temperature is high in summer, and the outdoor low temperature in winter can be reduced. It can reduce the indoor heating energy consumption.
  • FIG. 4 shows a schematic structural view of an optical adjustment layer provided by an embodiment of the present application. Referring to FIG. The first protective layer 62 and the second protective layer 63 on the side.
  • the metal infrared reflective layer 61 is a functional layer with infrared spectrum reflection, and this layer can adopt a metal material with high reflectivity of infrared light, so that the optical adjustment layer 60 has high reflectivity for infrared rays.
  • the first protective layer 62 and the second protective layer 63 that are respectively arranged on both sides of the metal infrared reflective layer 61 are the protective layers of the metallic infrared reflective layer 61, which can protect the metallic infrared reflective layer 61 and prevent subsequent calcium
  • the first protective layer 62 and the second protective layer 63 are usually made of dielectric materials with high chemical stability and high light transmittance due to the mechanical loss and chemical corrosion of the metal infrared reflective layer 61 during the preparation of titanium ore batteries.
  • the metal infrared reflective layer 61 in the optical adjustment layer 60 may include at least one of silver, aluminum and gold, and the reflectivity of silver, aluminum and gold in the infrared band is greater than 90%.
  • the thickness of the metal infrared reflective layer 61 may be 1-30 nanometers, so as to ensure that the light transmittance of the metal infrared reflective layer 61 will not be reduced due to being too thick.
  • the thickness of the metal infrared reflective layer 61 is less than 10 nanometers.
  • an increase in the particle size of the metal in the metal infrared reflective layer 61 will lead to an increase in scattering, so that the reflectivity of the formed optical adjustment layer 60 will decrease.
  • the first protective layer 62 and the second protective layer 63 may comprise: at least one of aluminum oxide, silicon oxide and silicon nitride, and meanwhile, the thickness of the first protective layer 62 and the second protective layer 63 may be 1-100 nanometers , so as to ensure that the first protection layer 62 and the second protection layer 63 will not fail to protect because of being too thin, and will not reduce the transmittance of the optical adjustment layer 60 for visible light due to being too thick.
  • the thickness of the first protective layer 62 and the second protective layer 63 is less than 30 nanometers.
  • other functional layers can also be set between the first protective layer 62 and the metal infrared reflective layer 61, and between the second protective layer 63 and the metallic infrared reflective layer 61, for example, can be set to prevent An anti-oxidation layer for metal oxidation in the middle of the metal infrared reflection layer 61 , and a toning layer for adjusting the color, etc.
  • FIG. 5 shows a schematic structural diagram of another optical adjustment layer provided in the embodiment of the present application.
  • the optical adjustment layer 60 may include at least one low refractive index adjustment layer 64 and at least one high refractive index
  • the index adjustment layer 65, at least one low refractive index adjustment layer 64 and at least one high refractive index adjustment layer 65 are arranged at intervals.
  • the high-refractive-index adjustment layer 65 with a larger refractive index and the low-refractive-index adjustment layer 64 with a smaller refractive index can be stacked in sequence, and arranged according to the structure shown in FIG.
  • the thickness of the layer 64 and the number of stacked layers and other parameters construct the optical adjustment layer 60 with a specific reflectivity for light of a specific wavelength.
  • the low-refractive-index adjustment layer 64 in the optical adjustment layer 60 can be made of a low-refractive-index material with a refractive index less than or equal to the first preset refractive index
  • the high-refractive-index adjustment layer 65 can be made of a material with a refractive index greater than or equal to A high-refractive-index material with a second preset refractive index, wherein the first preset refractive index is less than or equal to the second preset refractive index, that is, the low-refractive-index material that constitutes the low-refractive-index adjustment layer 64 has a lower refractive index than the material that constitutes the high-refractive index The refractive index of the high refractive index material of the index adjustment layer 65.
  • the following formula can be constructed:
  • ⁇ represents the wavelength of the incident light
  • m represents the sum of the layers of the low refractive index adjustment layer and the high refractive index adjustment layer in the optical adjustment layer;
  • n i represents the refractive index of the i-th layer structure in the optical adjustment layer
  • ⁇ i represents the phase difference of the reflected light wave of the i-th layer structure in the optical adjustment layer
  • ⁇ i represents the angular component of the refractive index of the i-th layer structure in the optical adjustment layer in the horizontal direction
  • ⁇ 0 represents the angular component of the refractive index of air in the horizontal direction
  • ⁇ g represents the angular component of the refractive index of the substrate structure (second transparent electrode layer) corresponding to the optical adjustment layer in the horizontal direction;
  • R represents the reflectance of the optical adjustment layer.
  • the incident light with a wavelength of ⁇ enters the optical adjustment layer 60 comprising m layers at an incident angle ⁇ 0
  • the incident light that represents the structure of the i-th layer in the optical adjustment layer can be determined according to the incident angle ⁇ 0 .
  • angle ⁇ i and put ⁇ , n i and ⁇ i into formula (2) to calculate ⁇ i
  • ni and ⁇ i into formula (3) to calculate ⁇ i .
  • the reflectance R of the optical adjustment layer 60 with m-layer structure for incident light with a wavelength of ⁇ can be determined.
  • the multilayer structure of the optical adjustment layer 60 can be reversely calculated and designed. , the numbers of the low-refractive-index adjusting layer and the high-refractive-index adjusting layer included in the optical adjusting layer 60 , and the refractive indices that the low-refractive-index adjusting layer and the high-refractive-index adjusting layer have are determined.
  • the refractive index and low-refractive-index adjusting layer corresponding to the low-refractive-index material contained in the low-refractive-index adjusting layer can be determined according to the refractive index of the low-refractive-index adjusting layer.
  • the optical adjustment layer 60 can be determined according to the wavelength of the infrared light and the preset reflectivity.
  • the refractive index corresponding to the medium and low refractive index material and the high refractive index material that is, to determine the category of the low refractive index material and the high refractive index material, as well as the thickness of the low refractive index adjustment layer and the high refractive index adjustment layer, and the low refractive index adjustment layer and the number of high refractive index adjustment layers.
  • the low refractive index material constituting the low refractive index adjustment layer 64 may include: at least one of silicon oxide, silicon oxynitride, sodium fluoride, lithium fluoride, magnesium fluoride and calcium fluoride, forming a high refractive index
  • the high refractive index material of the rate adjustment layer 65 may include: silicon oxynitride, aluminum oxynitride, tungsten sulfide, molybdenum sulfide, lead sulfide, boron carbide, silicon carbide, aluminum antimonide, gallium antimonide, indium antimonide, bismuth selenide , at least one of molybdenum selenide, lead selenide, tungsten selenide, zinc telluride, lead telluride and molybdenum telluride.
  • the conditions are met: the reflectivity for infrared light is greater than or equal to 60-80%, and the structure of the corresponding optical adjustment layer 60 can be: the refractive index of the low refractive index adjustment layer 64 is less than or equal to 1.7, The refractive index of the high refractive index adjustment layer 65 is greater than or equal to 2.5, and the number of the low refractive index adjustment layer 64 and the high refractive index adjustment layer 65, that is, the number of stacked layers is greater than or equal to 1 and less than or equal to 5.
  • FIG. 6 shows a schematic structural diagram of another perovskite cell provided by the embodiment of the present application.
  • the perovskite cell may further include: an up-conversion light-emitting layer 80 .
  • the up-conversion light-emitting layer 80 is disposed between the second carrier transport layer 30 and the optical adjustment layer 60 .
  • the up-conversion light-emitting layer 80 has an up-conversion light-emitting function, that is, based on the up-conversion effect, two or more low-energy photons can be continuously excited to a high-energy state, and then a high-energy photon can be emitted.
  • the low-energy infrared photons in the reflected infrared light can be absorbed by the up-conversion light-emitting layer 80, convert and emit high-energy visible light photons, and the visible light photons can be further absorbed by the perovskite light-absorbing layer 10
  • Absorption and reuse can improve the utilization rate of the spectrum of the perovskite battery and improve the energy conversion efficiency of the perovskite battery.
  • the up-conversion light-emitting layer 80 is disposed between the second carrier transport layer 30 and the optical adjustment layer 60, that is, an upper conversion light-emitting layer 80 and optical adjustment layer 60, therefore, the second transparent electrode layer 50 and the second carrier The carrier transport layer 30 is electrically connected.
  • the thickness of the up-conversion light-emitting layer 80 may be less than or equal to 1000 nanometers. If the thickness of the up-conversion light-emitting layer 80 is too large, it is not conducive to the transmission of visible light, and it is also not conducive to drilling holes in the up-conversion light-emitting layer 80 later. To prepare conductive structures, etc.
  • the bandgap of the up-conversion light-emitting layer 80 may be greater than or equal to 3.0 eV to ensure that the up-conversion light-emitting layer 80 has no absorption for visible light.
  • the perovskite battery may further include: a conductive structure 70 .
  • a through hole penetrating through the optical adjustment layer 60 can be provided in the optical adjustment layer 60, and the conductive structure 70 is arranged in the through hole of the optical adjustment layer 60, so that one end of the conductive structure 70 is connected to the second carrier transport layer 30, and the other end of the conductive structure 70 is connected to the second transparent electrode layer 50, so as to ensure the electrical connection between the second transparent electrode layer 50 and the second carrier transport layer 30.
  • a through hole penetrating the optical adjustment layer 60 and the up-conversion light-emitting layer 80 may be provided in the optical adjustment layer 60 and the up-conversion light-emitting layer 80, and the conductive structure 70 is disposed in the through hole of the optical adjustment layer 60 and the up-conversion light-emitting layer 80, so that one end of the conductive structure 70 is connected to the second carrier transport layer 30, and the other end of the conductive structure 70 is connected to the second transparent electrode layer 50, Therefore, the electrical connection between the second transparent electrode layer 50 and the second carrier transport layer 30 is ensured.
  • the conductive structure 70 in the perovskite battery may include: at least one of indium-doped tin oxide (ITO), aluminum-doped zinc oxide (AZO), metal materials, and mixed materials containing multiple metals.
  • ITO indium-doped tin oxide
  • AZO aluminum-doped zinc oxide
  • the material of the conductive structure 70 may be the same as or different from the conductive material in the second transparent electrode layer 50 .
  • the perovskite light absorbing layer 10 may include: at least one of organic-inorganic halide perovskite, all-inorganic perovskite, lead-free perovskite and double perovskite.
  • the perovskite cells are required to have a certain degree of light transmission to meet the daily indoor lighting needs. Therefore, the bandgap of the perovskite light-absorbing layer 10 in the perovskite cell can be greater than or equal to 1.5 electron volts, so as to ensure that the bandgap of the perovskite light-absorbing layer 10 is not too narrow, resulting in perovskite light-absorbing The light absorption range of layer 10 is too wide to avoid affecting the light transmission of the perovskite cell.
  • all-inorganic perovskite to prepare the perovskite light-absorbing layer 10, such as CsPbI 3 , CsPbI 2 Br, CsPbBr 3 , etc. Due to the high stability of all-inorganic perovskite, when the perovskite battery is applied in Building window glass can ensure better stability of perovskite cells.
  • the first transparent electrode layer 40 and the second transparent electrode layer 50 in the perovskite cell may include: indium tin oxide conductive glass (ITO), fluorine-doped tin dioxide conductive glass (FTO) and aluminum doped At least one of the doped zinc oxide conductive glass (AZO), so that the transmittance of the first transparent electrode layer 40 and the second transparent electrode layer 50 for visible light is greater than 90%, and the sheet resistance of the second transparent electrode layer 50 is less than Or equal to 10 ohms/square, so that the second transparent electrode layer 50 can also have better conductivity when it has a certain light transmittance.
  • ITO indium tin oxide conductive glass
  • FTO fluorine-doped tin dioxide conductive glass
  • AZO doped At least one of the doped zinc oxide conductive glass
  • the FTO conductive glass of "2.2mm-14" of Wuhan Lattice is adopted to form a transparent conductive substrate as the second transparent electrode layer 50, and the transmittance of the second transparent electrode layer 50 is 90%;
  • the band gap is 1.73 eV, and the thickness is 600 nanometers;
  • the thickness is 300 nanometers
  • the optical adjustment layer 60 adopts a structural design as shown in Figure 4, wherein:
  • the first protective layer 62 adopts 20 nanometers thick titanium dioxide (TiO2)
  • the second protective layer 63 adopts 20 nanometers thick zirconium dioxide (ZrO2)
  • the metal infrared reflection layer 61 adopts 5 nanometers thick aluminum as the active layer of infrared reflection
  • Fig. 7 shows a graph of the reflectivity of a metal infrared reflective layer in the embodiment of the present application. Referring to Fig. 7, the reflectivity of an aluminum film with a thickness of 5-10 nanometers to infrared light is as high as 90%.
  • the FTO conductive glass of "2.2mm-14" of Wuhan Lattice is adopted to form a transparent conductive substrate as the second transparent electrode layer 50, the transmittance of the second transparent electrode layer 50 is 90%, and the transmittance 90%;
  • CsPbI3 perovskite is used as the perovskite light absorbing layer 10, with a band gap of 1.73 electron volts and a thickness of 600 nanometers;
  • the thickness is 30 nanometers
  • the thickness is 100 nanometers
  • the optical adjustment layer 60 adopts a structural design as shown in Figure 5, wherein:
  • the high refractive index adjustment layer 65 is made of molybdenum selenide (MoSe2) material, and its refractive index is 4.4;
  • the low refractive index adjustment layer 64 is made of magnesium fluoride (MgF2) material, and its refractive index is 1.38, and the high refractive index adjustment layer 65 and
  • the number of overlapping layers of the low refractive index adjustment layer 64 is 3, that is, the number of the high refractive index adjustment layer 65 and the number of the low refractive index adjustment layer 64 are 3 layers respectively.
  • Table 1 lists the thickness of each film layer in the optical adjustment layer 60 from the backlight surface of the perovskite cell to the light-facing surface in order:
  • FIG. 8 shows a graph of reflectance of an optical adjustment layer provided by an embodiment of the present application.
  • the optical adjustment layer 60 can achieve the effect that the average reflectance of infrared light is greater than 70%.
  • the structure of the perovskite cell in this example is basically the same as the structure of the perovskite cell in Example 1, the only difference is that an up-conversion is added between the second carrier transport layer 30 and the optical adjustment layer 60 Light emitting layer 80.
  • the material of the up-conversion light-emitting layer 80 is sodium fluoroyttrium (NaYF4) co-doped with Yb +3 (20%) and Er +3 (2%), with a thickness of 400 nanometers and a band gap of about 8 electron volts, which can After absorbing two photons of 975 nanometers, one photon of 650 nanometers is emitted, which can be absorbed by the perovskite light absorption layer 10 again, thereby improving the energy conversion efficiency of the perovskite cell.
  • NaYF4 sodium fluoroyttrium
  • Er +3 2%
  • the embodiment of the present application also provides a photovoltaic module, including any one of the perovskite cells described above, the electrical connection parts between the cells, the packaging material, the frame and the external electrical connection parts, which have the same characteristics as the aforementioned perovskite cells.
  • the battery has the same or similar beneficial effects.

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Abstract

本申请提供一种钙钛矿电池及光伏组件，涉及太阳能光伏技术领域。钙钛矿电池包括：钙钛矿光吸收层、第一载流子传输层、第二载流子传输层、第一透明电极层、第二透明电极层和光学调节层；光学调节层设置在第二载流子传输层和第二透明电极层之间，且光学调节层对于可见光的透过率大于或等于预设透过率，对于红外光的反射率大于或等于预设反射率。本申请中，由于光学调节层对于可见光的透过率大于或等于预设透过率，从而可以确保钙钛矿电池的效率以及建筑物的采光需求，同时，在光学调节层对于红外光的反射率大于或等于预设反射率时，可以确保建筑物的保温和制冷等需求，从而降低建筑物由于保温和制冷需要而产生的能量损耗。

Description

一种钙钛矿电池及光伏组件
相关申请的交叉引用
本申请要求在2021年08月04日提交中国专利局、申请号为202110892086.3、名称为“一种钙钛矿电池及光伏组件”的中国专利公开的优先权，其全部内容通过引用结合在本申请中。
技术领域
本申请涉及太阳能光伏技术领域，特别是涉及一种钙钛矿电池及光伏组件。
背景技术
钙钛矿电池是一种结构简单、高效率、低成本的太阳能电池，其光电转换效率可达25％以上，是目前最具应用前景的新型太阳能电池。
钙钛矿电池由于其工艺和电池结构的特点，可以制作为透明/半透明电池，从而应用在建筑领域，例如，可以作为建筑物的玻璃。进一步的，由于钙钛矿电池中作为光吸收层的钙钛矿材料的带隙范围为1.5-3.0电子伏特，对应可以吸收的光线的波长为414-820纳米，该波长范围基本涵盖了整个可见光谱，即钙钛矿电池中的光吸收层可以吸收太阳光线中的可见光转化为光生载流子，从而产生电流。同时，可以通过改变钙钛矿材料中卤素离子的类别和比例，使得钙钛矿材料的带隙可连续调节，从而确保钙钛矿材料可以吸收不同颜色的可见光，即钙钛矿电池的颜色可以在可见光对应的颜色范围内连续调节，使得钙钛矿电池应用在建筑领域时具有颜色可调节性。
但是，在目前的方案中，将钙钛矿电池应用在建筑领域中时，并未考虑到建筑领域的其他应用需求，例如，将钙钛矿电池作为建筑物的玻璃时如何确保建筑物的保温和制冷等需求。
概述
本申请提供一种钙钛矿电池及光伏组件，旨在解决将钙钛矿电池作为建 筑物的玻璃时，如何确保建筑物的保温和制冷等需求的问题。
第一方面，本申请实施例提供了一种钙钛矿电池，所述钙钛矿电池包括：
钙钛矿光吸收层、第一载流子传输层、第二载流子传输层、第一透明电极层、第二透明电极层和光学调节层；
所述第一载流子传输层设置在所述钙钛矿光吸收层的向光面，所述第二载流子传输层设置在所述钙钛矿光吸收层的背光面，所述第一载流子传输层和所述第二载流子传输层对应的载流子选择性相反；
所述第一透明电极层设置在所述第一载流子传输层远离所述钙钛矿光吸收层的一面，所述第二透明电极层设置在所述第二载流子传输层远离所述钙钛矿光吸收层的一侧；
所述光学调节层设置在所述第二载流子传输层和所述第二透明电极层之间，所述第二透明电极层和所述第二载流子传输层电性连接，所述光学调节层对于可见光的透过率大于或等于预设透过率，且所述光学调节层对于红外光的反射率大于或等于预设反射率。
可选地，所述预设透过率为70-90％，所述预设反射率为60-80％。
可选地，所述预设透过率为80％，所述预设反射率为70％。
可选地，所述光学调节层包括金属红外反射层，以及分别设置在所述金属红外反射层两侧的第一保护层和第二保护层。
可选地，所述金属红外反射层包含：银、铝和金中的至少一种，所述金属红外反射层的厚度为1-30纳米；
所述第一保护层和所述第二保护层包含：氧化铝、氧化硅和氮化硅中的至少一种，所述第一保护层和所述第二保护层的厚度为1-100纳米。
可选地，所述金属红外反射层的厚度小于10纳米，所述第一保护层和所述第二保护层的厚度小于30纳米。
可选地，所述光学调节层包括至少一层低折射率调节层和至少一层高折射率调节层；
所述至少一层低折射率调节层和所述至少一层高折射率调节层间隔设置。
可选地，所述低折射率调节层包含折射率小于或等于第一预设折射率的 低折射率材料，所述高折射率调节层包含折射率大于或等于第二预设折射率的高折射率材料，所述第一预设折射率小于或等于所述第二预设折射率；
根据红外光的波长和所述预设反射率，确定所述低折射率材料和所述高折射率材料对应的折射率、所述低折射率调节层和所述高折射率调节层的厚度，以及所述低折射率调节层和所述高折射率调节层的数量。
可选地，所述低折射率材料包含：氧化硅、氮氧化硅、氟化钠、氟化锂、氟化镁和氟化钙中的至少一种；
所述高折射率材料包含：氮氧化硅、氮氧化铝，硫化钨、硫化钼、硫化铅，碳化硼、碳化硅、锑化铝、锑化镓、锑化铟，硒化铋、硒化钼、硒化铅、硒化钨、碲化锌、碲化铅和碲化钼中的至少一种。
可选地，所述低折射率调节层的折射率小于或等于1.7，所述高折射率调节层的折射率大于或等于2.5，所述低折射率调节层和所述高折射率调节层的数量大于或等于1，且小于或等于5。
可选地，所述钙钛矿电池还包括：上转换发光层；
所述上转换发光层设置在所述第二载流子传输层和所述光学调节层之间。
可选地，所述上转换发光层的厚度小于或等于1000纳米；
所述上转换发光层的带隙大于或等于3.0电子伏特。
可选地，所述钙钛矿电池还包括：导电结构；
所述光学调节层中设置有贯穿所述光学调节层的通孔，所述导电结构设置在所述光学调节层的通孔中，所述导电结构的一端与所述第二载流子传输层连接，所述导电结构的另一端与所述第二透明电极层连接。
可选地，所述导电结构包含：掺铟氧化锡、掺铝氧化锌、金属材料和包含多种金属的混合材料中的至少一种。
可选地，所述钙钛矿光吸收层包含：有机-无机卤化物钙钛矿、全无机钙钛矿、无铅钙钛矿和双钙钛矿中的至少一种；
所述钙钛矿光吸收层的带隙大于或等于1.5电子伏特。
可选地，所述第一透明电极层和所述第二透明电极层包含：氧化铟锡导电玻璃、掺杂氟的二氧化锡导电玻璃和铝掺杂的氧化锌导电玻璃中的至少一种；
所述第一透明电极层和所述第二透明电极层对于可见光的透过率大于90％，所述第二透明电极层的方块电阻小于或等于10欧姆/正方。
第二方面，本申请实施例提供了一种光伏组件，所述光伏组件包括前述任一所述的钙钛矿电池。
基于上述钙钛矿电池及光伏组件，本申请存在以下有益效果：本申请中，由第一透明电极层、第二透明电极层构成透明的钙钛矿电池可以应用于建筑领域，在钙钛矿电池中的第二载流子传输层和第二透明电极层之间设置有光学调节层，由于光学调节层对于可见光的透过率大于或等于预设透过率，从而可以确保钙钛矿电池的效率以及建筑物的采光需求。同时，由于红外光的能量约占整个太阳光谱能量的50％以上，是导致建筑物内部温度升高或降低的主要因素之一，因此，在光学调节层对于红外光的反射率大于或等于预设反射率时，可以确保建筑物的保温和制冷等需求，从而降低建筑物由于保温和制冷需要而产生的能量损耗。
附图简述
为了更清楚地说明本申请实施例的技术方案，下面将对本申请实施例的描述中所需要使用的附图作简单地介绍，显而易见地，下面描述中的附图仅仅是本申请的一些实施例，对于本领域普通技术人员来讲，在不付出创造性劳动性的前提下，还可以根据这些附图获得其他的附图。
图1示出了本申请实施例中的一种钙钛矿电池的结构示意图；
图2示出了本申请实施例中的一种光学调节层的光线路径示意图；
图3示出了本申请实施例中的另一种光学调节层的光线路径示意图；
图4示出了本申请实施例中的一种光学调节层的结构示意图；
图5示出了本申请实施例中的另一种光学调节层的结构示意图；
图6示出了本申请实施例中的另一种钙钛矿电池的结构示意图；
图7示出了本申请实施例中的一种金属红外反射层的反射率曲线图；
图8示出了本申请实施例中的一种光学调节层的反射率曲线图。
附图编号说明：
10-钙钛矿光吸收层，20-第一载流子传输层，30-第一载流子传输层，40-第一透明电极层，50-第一透明电极层，60-光学调节层，61-金属红外反射层， 62-第一保护层，63-第一保护层，64-低折射率调节层，65-高折射率调节层，70-导电结构，80-上转换发光层。
详细描述
下面将结合本申请实施例中的附图，对本申请实施例中的技术方案进行清楚、完整地描述，显然，所描述的实施例是本申请一部分实施例，而不是全部的实施例。基于本申请中的实施例，本领域普通技术人员在没有作出创造性劳动前提下所获得的所有其他实施例，都属于本申请保护的范围。
下面通过列举几个具体地实施例详细介绍本申请提供的一种钙钛矿电池及生产方法、光伏光伏组件。
图1示出了本申请实施例提供的一种钙钛矿电池的结构示意图，参照图1，钙钛矿电池可以包括：钙钛矿光吸收层10、第一载流子传输层20、第二载流子传输层30、第一透明电极层40、第二透明电极层50和光学调节层60。
其中，钙钛矿电池是利用钙钛矿材料作为吸光材料的太阳能电池，即将钙钛矿材料作为电池中的光吸收层，形成钙钛矿光吸收层10，钙钛矿电池属于第三代太阳能电池，也称作新概念太阳能电池。钙钛矿材料的通式为ABX3，其中A为+1价阳离子，B为+2价阳离子，X为卤素离子，通常为氯离子(Cl -)、溴离子(Br -)和碘离子(I -)中的一种或多种。不同卤素离子的钙钛矿材料具有不同的禁带宽度，卤素离子为I -的钙钛矿材料的带隙最小(一般为1.5电子伏特左右)，卤素离子为Cl -的钙钛矿材料的带隙最大(一般为3电子伏特左右)。并且，钙钛矿材料中可以含有两种混合的卤素离子，且混合比例可连续调节，因此，钙钛矿材料的带隙可以在1.5-3电子伏特的范围内连续调节，对应可吸收的光线的波长范围为414-820纳米左右，基本涵盖了整个可见光光谱。
具体地，在太阳光照射钙钛矿电池时，钙钛矿光吸收层10可以吸收太阳光线中波长范围在414-820纳米之间的太阳光线，在钙钛矿光吸收层10中产生载流子(电子和空穴)。
进一步的，第一载流子传输层20设置在钙钛矿光吸收层10的向光面，第二载流子传输层30设置在钙钛矿光吸收层10的背光面，且第一载流子传输层20和第二载流子传输层30对应的载流子选择性相反，且第一透明电极 层40设置在第一载流子传输层20远离钙钛矿光吸收层10的一面，第二透明电极层50设置在第二载流子传输层30远离钙钛矿光吸收层10的一侧，第二透明电极层50和第二载流子传输层30电性连接。
具体地，第一载流子传输层20和第二载流子传输层30对应的载流子选择性相反，若第一载流子传输层20具有电子选择性，第二载流子传输层30具有空穴选择性，则钙钛矿光吸收层10在吸收太阳光线并产生载流子之后，载流子中的电子载流子被第一载流子传输层20选择并传输至第一透明电极层40，进而被第一透明电极层40收集，载流子中的空穴载流子被第二载流子传输层30选择并传输至第二透明电极层50，进而被第二透明电极层50收集，从而实现钙钛矿光吸收层10中载流子的分离。
此外，若第一载流子传输层20具有空穴选择性，第二载流子传输层30具有电子选择性，则钙钛矿光吸收层10在吸收太阳光线并产生载流子之后，载流子中的空穴载流子被第一载流子传输层20选择并传输至第一透明电极层40，进而被第一透明电极层40收集，载流子中的电子载流子被第二载流子传输层30选择并传输至第二透明电极层50，进而被第二透明电极层50收集，从而实现钙钛矿光吸收层10中载流子的分离。
在本申请实施例中，在将钙钛矿电池应用在建筑领域，例如作为建筑物的玻璃或幕墙，需要得到对太阳光线具有一定透过率的透明钙钛矿电池，因此，钙钛矿电池中用于收集不同载流子的电极层可以选用透明电极层，具体地，可以在不透明的钙钛矿电池结构的基础上，采用透明电极层替换掉例如金属电极、碳电极等不透明电极层，实现钙钛矿电池的透明化，确保建筑物的采光。
进一步的，钙钛矿电池还可以包括：光学调节层60，其中，光学调节层60设置在第二载流子传输层30和第二透明电极层50之间，即光学调节层60设置在钙钛矿电池中远离太阳光线入射方向一侧的载流子传输层和电极层之间，且光学调节层60对于可见光的透过率大于或等于预设透过率。因此，当太阳光线中的可见光经过钙钛矿光吸收层10的吸收之后，剩余的可见光部分可以透射穿过光学调节层60。
在太阳光线对应的太阳光谱中，可见光为波长小于760纳米的光线，对建筑物内部环境起到照明作用，而波长大于或等于760纳米的红外光的能量 约占整个太阳光线能量的50％以上，太阳光线中的这部分光线为不可见光，并不能对建筑物的内部环境起到照明作用，但却是导致建筑物内部温度升高或降低的主要因素之一。需要说明的是，可见光和红外光的波长界限值在不同的标准和规定中可以存在一定的差距，例如，有些标准中规定波长小于740纳米的光线为可见光，大于或等于740纳米的光线则为红外光，有些标准中规定波长小于780纳米的光线为可见光，大于或等于780纳米的光线则为红外光，相应的，本申请实施例中，则可以使得光学调节层60对于波长小于760纳米的可见光的透过率大于或等于预设透过率，对于波长大于或等于760纳米的红外光的反射率大于或等于预设反射率。
在实际生活中，夏季时，由于建筑物外部温度大于室内温度，室内需要制冷，因此，需要安装在建筑物上的钙钛矿电池可以将太阳光线中的红外光反射至室外，从而可以大幅降低室内的制冷能耗；冬季时，建筑物内部温度大于外部温度，室内需要制热，需要安装在建筑物上的钙钛矿电池可以将室内的红外光反射至室内，防止室内热量散失，从而可以大幅降低室内的制热能耗。
因此，可以使得钙钛矿电池中设置在第二载流子传输层30和第二透明电极层50之间的光学调节层60对于红外光的反射率大于或等于预设反射率，从而当太阳光线中的可见光经过钙钛矿光吸收层10的吸收之后，剩余光线中的红外光在到达光学调节层60时可以被光学调节层60反射，避免红外光透射穿过钙钛矿电池。
图2示出了本申请实施例提供的一种光学调节层的光线路径示意图，参照图2，入射光中包含可见光和红外光。其中，一部分可见光可以被钙钛矿电池中的钙钛矿光吸收层10吸收进行光电转换，一部分可见光透过钙钛矿电池从室外进入室内，从而对建筑物进行照明；而大部分红外光不属于钙钛矿电池中钙钛矿光吸收层10可吸收的光线，且不能对建筑物的内部环境起到照明作用，只能导致建筑物内部温度升高或降低。
因此，当采用本申请实施例中的钙钛矿电池作为建筑物的玻璃时，若入射光为从室外照射至室内的太阳光线时，入射光中的可见光部分经过钙钛矿光吸收层10的吸收之后，由于光学调节层60对于可见光的透过率大于或等于预设透过率，因此，剩余的可见光部分可以透射穿过光学调节层60，进入 室内，从而确保建筑物的采光和照明；而入射光中的红外光中绝大部分光线不属于钙钛矿光吸收层10可吸收的光线，因此，入射光中的大部分红外光穿过钙钛矿光吸收层10到达光学调节层60，同时，由于光学调节层60对于红外光的反射率大于或等于预设反射率，因此，入射光中的红外光被光学调节层60反射出室外，而未能进入室内。由此可知，在处于夏天时，采用包含光学调节层60的钙钛矿电池作为建筑物的玻璃，可以确保钙钛矿电池能够吸收入射光中的可见光进行正常的光电转换，同时，可以确保建筑物的采光和照明，以及确保室外的红外光无法穿透钙钛矿电池进入室内，实现能量隔绝，避免红外光将室外炎热的温度带入室内，进而降低了建筑物内部的制冷能耗。
图3示出了本申请实施例提供的另一种光学调节层的光线路径示意图，参照图3，当采用本申请实施例中的钙钛矿电池作为建筑物的玻璃时，若入射光为从室内照射至室外的光线时，由于光学调节层60对于可见光的透过率大于或等于预设透过率，因此，入射光中的可见光部分可以透射穿过光学调节层60，射向钙钛矿光吸收层；同时，由于光学调节层60对于红外光的反射率大于或等于预设反射率，因此，入射光中的红外光被光学调节层60反射回室内，而未能射出室外。由此可知，在处于冬天时，采用包含光学调节层60的钙钛矿电池作为建筑物的玻璃，可以确保钙钛矿电池能够吸收入射光中的可见光进行正常的光电转换，同时，可以确保建筑物的采光和照明，以及确保室内的红外光无法穿透钙钛矿电池射向室外，实现能量隔绝，避免红外光射向室外而导致室内热量散失，进而降低了建筑物内部的制热能耗。
由此可知，钙钛矿电池中的光学调节层60仅对入射光中的红外光进行调节，避免较多的红外光穿透钙钛矿电池，而对可见光具有一定的透过率，从而确保了建筑物的照明和采光，也避免了对钙钛矿光吸收层10对于可见光的光吸收过程产生影响，确保了钙钛矿电池的转换效率。
其中，预设透过率可以为光学调节层60预先设定的针对可见光的透过率，以确保钙钛矿电池中的钙钛矿光吸收层10具有较高的转换效率，例如，70-90％。预设反射率可以为光学调节层60预先设定的针对红外光的反射率，以确保钙钛矿电池对于红外光具有一定的隔绝效果，例如60-80％。
在本申请实施例中，一种钙钛矿电池，包括：钙钛矿光吸收层、第一载流子传输层、第二载流子传输层、第一透明电极层、第二透明电极层和光学 调节层；第一载流子传输层设置在钙钛矿光吸收层的向光面，第二载流子传输层设置在钙钛矿光吸收层的背光面，第一载流子传输层和第二载流子传输层对应的载流子选择性相反；第一透明电极层设置在第一载流子传输层远离钙钛矿光吸收层的一面，第二透明电极层设置在第二载流子传输层远离钙钛矿光吸收层的一侧；光学调节层设置在第二载流子传输层和第二透明电极层之间，且光学调节层对于可见光的透过率大于或等于预设透过率，光学调节层对于红外光的反射率大于或等于预设反射率。本申请中，由第一透明电极层、第二透明电极层构成透明的钙钛矿电池可以应用于建筑领域，在钙钛矿电池中的第二载流子传输层和第二透明电极层之间设置有光学调节层，由于光学调节层对于可见光的透过率大于或等于预设透过率，从而可以确保钙钛矿电池的效率以及建筑物的采光需求。同时，由于红外光的能量约占整个太阳光谱能量的50％以上，是导致建筑物内部温度升高或降低的主要因素之一，因此，在光学调节层对于红外光的反射率大于或等于预设反射率时，可以确保建筑物的保温和制冷等需求，从而降低建筑物由于保温和制冷需要而产生的能量损耗。
可选地，预设透过率可以为80％，预设反射率可以为70％。当可见光透过率大于80％时，可满足建筑物采光的要求，无需在白天日照情况良好的情况下仍需增加室内照明，不会导致额外的照明能耗的增大；同时当红外光反射率大于70％时，该光学调节膜可以阻挡大部分非可见光区域的能量，通过热辐射的途径从高温侧向低温侧传递，即夏季室外高温时可降低室内的制冷能耗，在冬季室外低温时可降低室内的制热能耗。
可选地，图4示出了本申请实施例提供的一种光学调节层的结构示意图，参照图4，光学调节层60可以包括金属红外反射层61，以及分别设置在金属红外反射层61两侧的第一保护层62和第二保护层63。
其中，金属红外反射层61为具有反射红外光谱的功能层，该层可以采用红外光反射率较高的金属材料，使得光学调节层60针对红外线具有较高的反射率。分别设置在金属红外反射层61两侧的第一保护层62和第二保护层63则为金属红外反射层61的保护层，可以对金属红外反射层61起到保护作用，防止在后续的钙钛矿电池制备过程中对金属红外反射层61的机械损失、化学腐蚀等作用，第一保护层62和第二保护层63通常采用化学稳定性较高，透 光率较高的电介质材料。
可选地，光学调节层60中的金属红外反射层61可以包含：银、铝和金中的至少一种，银、铝和金等金属材料在红外波段的反射率大于90％。同时，金属红外反射层61的厚度可以为1-30纳米，以确保金属红外反射层61不会由于过厚而使得透光率降低。优选的，金属红外反射层61的厚度小于10纳米。此外，金属红外反射层61中的金属颗粒度增大，会导致散射增加，使得构成的光学调节层60的反射率下降。
第一保护层62和第二保护层63可以包含：氧化铝、氧化硅和氮化硅中的至少一种，同时，第一保护层62和第二保护层63的厚度可以为1-100纳米，以确保第一保护层62和第二保护层63不会由于过薄而起不到保护的作用，也不会由于过厚而降低光学调节层60对于可见光的透过率。优选的，第一保护层62和第二保护层63的厚度小于30纳米。
在本申请实施例中，在第一保护层62和金属红外反射层61之间，以及第二保护层63和金属红外反射层61之间还可以设置其他功能层，例如，可以设置用于防止金属红外反射层61中间金属氧化的抗氧化层，以及用于调节颜色的调色层等。
可选地，图5示出了本申请实施例提供的另一种光学调节层的结构示意图，参照图5，光学调节层60可以包括至少一层低折射率调节层64和至少一层高折射率调节层65，至少一层低折射率调节层64和至少一层高折射率调节层65间隔设置。
根据光学理论，可以将折射率较大的高折射率调节层65和折射率较小的低折射率调节层64依次叠加，按照如图5所示的结构进行设置，从而构建具有超结构型反射结构膜系的光学调节层60。并可以通过调控膜系结构中高折射率调节层65包含的高折射率材料的折射率、低折射率调节层64包含的低折射率材料的折射率、高折射率调节层65和低折射率调节层64的厚度，以及叠加层数等参数，构建针对特定波长的光线具有特定反射率的光学调节层60。
可选地，光学调节层60中的低折射率调节层64可以为包含折射率小于或等于第一预设折射率的低折射率材料，高折射率调节层65可以为包含折射率大于或等于第二预设折射率的高折射率材料，其中，第一预设折射率小于 或等于第二预设折射率，即构成低折射率调节层64的低折射率材料的折射率小于构成高折射率调节层65的高折射率材料的折射率。
在本申请实施例中，针对包括至少一层低折射率调节层64和至少一层高折射率调节层65的多层结构的光学调节层60而言，当波长为λ的入射光，以入射角Φ 0入射多层结构的光学调节层60时，根据多层光学结构菲涅尔方程，可以构建以下公式：
Figure PCTCN2022091968-appb-000001
Figure PCTCN2022091968-appb-000002
ω i＝n icosφ i    (3)
Figure PCTCN2022091968-appb-000003
其中：
λ表示入射光的波长；
Figure PCTCN2022091968-appb-000004
表示入射光在光学调节层中第i层结构的入射角；
m表示光学调节层中低折射率调节层和高折射率调节层的层数总和；
n i表示光学调节层中第i层结构的折射率；
δ i表示光学调节层中第i层结构的反射光波的相位差；
ω i表示光学调节层中第i层结构的折射率在水平方向的角分量；
ω 0表示空气的折射率在水平方向的角分量；
ω g表示光学调节层对应的衬底结构(第二透明电极层)的折射率在水平方向的角分量；
R表示光学调节层的反射率。
具体地，当波长为λ的入射光，以入射角Φ 0入射包含有m层的光学调节层60时，首先可以根据入射角Φ 0确定表示入射光在光学调节层中第i层结构的入射角φ i，并将λ、n i和φ i带入公式(2)中计算出δ i，将n i和φ i带入公式(3)中计算出ω i。然后将计算出的δ i和ω i带入公式(1)中，确定矩阵中的A、B、C、D的值。最后将A、B、C、D，以及ω 0和ω g带入公式(4) 中，就可以确定具有m层结构的光学调节层60针对波长为λ的入射光的反射率R。
相应的，根据上述计算过程，在确定了光学调节层60针对的入射光的波长，以及光学调节层60针对该入射光的反射率之后，可以反向计算和设计光学调节层60的多层结构，确定光学调节层60中包含的低折射率调节层和高折射率调节层的数量、低折射率调节层和高折射率调节层具有的折射率。进一步的，在确定了低折射率调节层具有的折射率之后，可以根据低折射率调节层具有的折射率，确定低折射率调节层包含的低折射率材料对应的折射率和低折射率调节层的厚度，使得由该厚度的低折射率材料构成低折射率调节层时具有相应的折射率；同样的，在确定了高折射率调节层具有的折射率之后，可以根据高折射率调节层具有的折射率，确定高折射率调节层包含的高折射率材料对应的折射率和高折射率调节层的厚度，使得由该厚度的高折射率材料构成高折射率调节层时具有相应的折射率。
因此，在本申请实施例中，由于光学调节层60针对红外光的反射率需要大于或等于预设反射率，因此，可以根据红外光的波长和所述预设反射率，确定光学调节层60中低折射率材料和高折射率材料对应的折射率，即确定低折射率材料和高折射率材料的类别，以及低折射率调节层和高折射率调节层的厚度，以及低折射率调节层和高折射率调节层的数量。
可选地，构成低折射率调节层64的低折射率材料可以包含：氧化硅、氮氧化硅、氟化钠、氟化锂、氟化镁和氟化钙中的至少一种，构成高折射率调节层65的高折射率材料可以包含：氮氧化硅、氮氧化铝，硫化钨、硫化钼、硫化铅，碳化硼、碳化硅、锑化铝、锑化镓、锑化铟，硒化铋、硒化钼、硒化铅、硒化钨、碲化锌、碲化铅和碲化钼中的至少一种。
可选地，根据理论计算，符合条件：针对红外光的反射率大于或等于60-80％，对应的光学调节层60的结构可以为：低折射率调节层64的折射率小于或等于1.7，高折射率调节层65的折射率大于或等于2.5，同时，低折射率调节层64和高折射率调节层65的数量，即叠加层数大于或等于1，且小于或等于5。且低折射率调节层64和高折射率调节层65叠加层数越多，光学调节层60的反射率越高，但是同时光学调节层60的透过率越低，即若低折射率调节层64和高折射率调节层65叠加层数过大，会降低光线的透过率。
需要说明的是，在光学调节层60中的各个分层的结构和材料确定之后，光学调节层60对于可见光的透过率，以及对于红外光的反射率则为固定值，不会发生变化。
可选地，图6示出了本申请实施例提供的另一种钙钛矿电池的结构示意图，参照图6，钙钛矿电池还可以包括：上转换发光层80。
其中，上转换发光层80设置在第二载流子传输层30和光学调节层60之间。上转换发光层80具有上转换发光功能，即基于上转换作用，可以将两个或两个以上的低能量的光子连续激发至高能态，然后发射一个高能量的光子。
参照图6，太阳光线从光照方向入射至钙钛矿电池，太阳光线中的大部分红外光不会被钙钛矿光吸收层10吸收，而红外光经过光学调节层60时会被光学调节层60反射经过上转换发光层80，反射的红外光中低能量的红外光子可以被上转换发光层80吸收，转换并发射高能量的可见光光子，该可见光光子可以进一步被钙钛矿光吸收层10吸收再利用，从而可以提高钙钛矿电池对光谱的利用率，提高钙钛矿电池的能量转换效率。
需要说明的是，由于上转换发光层80设置在第二载流子传输层30和光学调节层60之间，即第二载流子传输层30和第二透明电极层50之间设置有上转换发光层80和光学调节层60，因此，可以通过在上转换发光层80和光学调节层60进行打孔，或者通过在外部电性连接的方式，使得第二透明电极层50和第二载流子传输层30电性连接。
可选地，上转换发光层80的厚度可以小于或等于1000纳米，若上转换发光层80的厚度过大，则不利于可见光的透过，也不利于后期在上转换发光层80中打孔以制备导电结构等。
此外，上转换发光层80的带隙可以大于或等于3.0电子伏特，以确保上转换发光层80对于可见光部分无吸收。
可选地，参照图1和图6，钙钛矿电池还可以包括：导电结构70。
具体地，由于光学调节层60和上转换发光层80常用的材料大多数为导电性不佳的材料，因此，为确保电荷能够在第二透明电极层50和第二载流子传输层30之间有效传输，可以在光学调节层60中设置有贯穿光学调节层60的通孔，导电结构70设置在光学调节层60的通孔中，使得导电结构70的一 端与第二载流子传输层30连接，导电结构70的另一端与第二透明电极层50连接，从而确保第二透明电极层50和第二载流子传输层30电性连接。
同样的，在钙钛矿电池中设置有上转换发光层80时，可以在光学调节层60和上转换发光层80中设置有贯穿光学调节层60和上转换发光层80的通孔，导电结构70设置在光学调节层60和上转换发光层80的通孔中，使得导电结构70的一端与第二载流子传输层30连接，导电结构70的另一端与第二透明电极层50连接，从而确保第二透明电极层50和第二载流子传输层30电性连接。
可选地，钙钛矿电池中的导电结构70可以包含：掺铟氧化锡(ITO)、掺铝氧化锌(AZO)、金属材料和包含多种金属的混合材料中的至少一种，此外，导电结构70的材料可以与第二透明电极层50中的导电材料相同，也可以不同。
可选地，钙钛矿光吸收层10可以包含：有机-无机卤化物钙钛矿、全无机钙钛矿、无铅钙钛矿和双钙钛矿中的至少一种。
同时，由于应用在建筑物窗玻璃这一场景的要求，需要钙钛矿电池具有一定的透光性，以满足日常的室内采光需求。因此，钙钛矿电池中的钙钛矿光吸收层10的带隙可以大于或等于1.5电子伏特，以确保钙钛矿光吸收层10的带隙不至于过窄，而导致钙钛矿光吸收层10的吸光范围过宽，从而避免影响钙钛矿电池的透光性。
此外，优选采用全无机钙钛矿制备钙钛矿光吸收层10，例如CsPbI 3、CsPbI 2Br、CsPbBr 3等，由于全无机钙钛矿的稳定性较高，在将钙钛矿电池应用在建筑物窗玻璃，可以确保钙钛矿电池具有更好的稳定性。
可选地，钙钛矿电池中的第一透明电极层40和第二透明电极层50可以包含：氧化铟锡导电玻璃(ITO)、掺杂氟的二氧化锡导电玻璃(FTO)和铝掺杂的氧化锌导电玻璃(AZO)中的至少一种，使得第一透明电极层40和第二透明电极层50对于可见光的透过率大于90％，且第二透明电极层50的方块电阻小于或等于10欧姆/正方，使得第二透明电极层50在具有一定透光率的情况下，还可以具有较好的导电性。
以下列举几种具体示例说明本申请实施例中钙钛矿电池的结构。
示例1：
(1)采用武汉晶格的“2.2毫米-14”的FTO导电玻璃形成透明导电衬底，作为第二透明电极层50，该第二透明电极层50的透过率为90％；
(2)采用二氧化锡(SnO2)电子传输层作为第一载流子传输层20，厚度为50纳米；
(3)采用CsPbI3钙钛矿作为钙钛矿光吸收层10，带隙为1.73电子伏特，厚度为600纳米；
(4)采用2,2',7,7'-四[N,N-二(4-甲氧基苯基)氨基]-9,9'-螺二芴(Spiro-OMeTAD)空穴传输层作为第二载流子传输层30，厚度为150纳米；
(5)采用ITO作为第一透明电极层40，厚度为300纳米；
(6)光学调节层60采用如图4的结构设计，其中：
第一保护层62采用20纳米厚的二氧化钛(TiO2)，第二保护层63采用20纳米厚的二氧化锆(ZrO2)，金属红外反射层61采用5纳米厚的铝作为红外反射的活性层，图7示出了本申请实施例中的一种金属红外反射层的反射率曲线图，参照图7，5-10纳米厚的铝膜，对红外光的反射率高达90％以上。
(7)在光学调节层60上激光打孔，得到孔径5微米，孔距50微米的通孔，并在通孔中填充ITO，形成导电结构70。
示例2：
(1)采用武汉晶格的“2.2毫米-14”的FTO导电玻璃形成透明导电衬底，作为第二透明电极层50，该第二透明电极层50的透过率为90％，透过率90％；
(2)采用2,2',7,7'-四[N,N-二(4-甲氧基苯基)氨基]-9,9'-螺二芴(Spiro-OMeTAD)空穴传输层作为第一载流子传输层20，厚度为100纳米；
(3)采用CsPbI3钙钛矿作为钙钛矿光吸收层10，带隙1.73电子伏特，厚度为600纳米；
(4)采用C60作为第二载流子传输层30，厚度为30纳米；
(5)采用ITO作为第一透明电极层40，厚度为100纳米；
(6)光学调节层60采用如图5的结构设计，其中：
高折射率调节层65采用硒化钼(MoSe2)材料，其折射率为4.4；低折射率调节层64采用氟化镁(MgF2)材料，其折射率为1.38，且高折射率调节层65和低折射率调节层64的叠加层数为3，即高折射率调节层65和低折射 率调节层64的数量各为3层。表1中依次列出了光学调节层60中从钙钛矿电池的背光面到向光面的各个膜层的厚度：
膜层 I-MgF 2 I-MoSe 2 2-MgF 2 2-MoSe 2 3-MgF 2 3-MoSe 2
厚度/纳米 357 100 221 14 208 126
表1
图8示出了本申请实施例提供的一种光学调节层的反射率曲线图，参照图8，根据理论计算，光学调节层60可以实现对于红外光的平均反射率大于70％的效果。
示例3
该示例中钙钛矿电池的结构与示例1中的钙钛矿电池的结构基本相同，唯一的不同之处在于，在第二载流子传输层30和光学调节层60之间加入了上转换发光层80。
上转换发光层80的材料为Yb +3(20％)和Er +3(2％)共掺杂的氟钇酸钠(NaYF4)，厚度为400纳米，其禁带宽度约8电子伏特，可以在吸收2个975纳米的光子后，发射一个650纳米的光子，该光子可以再次被钙钛矿光吸收层10吸收，从而提高钙钛矿电池的能量转换效率。
此外，本申请实施例还提供了一种光伏组件，包括前述任一所述的钙钛矿电池，电池间的电学连接部件、封装材料、边框以及对外电学连接部件，具有与前述的钙钛矿电池相同或相似的有益效果。
上面结合附图对本申请的实施例进行了描述，但是本申请并不局限于上述的具体实施方式，上述的具体实施方式仅仅是示意性的，而不是限制性的，本领域的普通技术人员在本申请的启示下，在不脱离本申请宗旨和权利要求所保护的范围情况下，还可做出很多形式，这些均属于本申请的保护之内。

Claims (17)

  1. 一种钙钛矿电池，其特征在于，所述钙钛矿电池包括：
    钙钛矿光吸收层、第一载流子传输层、第二载流子传输层、第一透明电极层、第二透明电极层和光学调节层；
    所述第一载流子传输层设置在所述钙钛矿光吸收层的向光面，所述第二载流子传输层设置在所述钙钛矿光吸收层的背光面，所述第一载流子传输层和所述第二载流子传输层对应的载流子选择性相反；
    所述第一透明电极层设置在所述第一载流子传输层远离所述钙钛矿光吸收层的一面，所述第二透明电极层设置在所述第二载流子传输层远离所述钙钛矿光吸收层的一侧；
    所述光学调节层设置在所述第二载流子传输层和所述第二透明电极层之间，所述第二透明电极层和所述第二载流子传输层电性连接，所述光学调节层对于可见光的透过率大于或等于预设透过率，且所述光学调节层对于红外光的反射率大于或等于预设反射率。
  2. 根据权利要求1所述的钙钛矿电池，其特征在于，所述预设透过率为70-90％，所述预设反射率为60-80％。
  3. 根据权利要求2所述的钙钛矿电池，其特征在于，所述预设透过率为80％，所述预设反射率为70％。
  4. 根据权利要求1所述的钙钛矿电池，其特征在于，所述光学调节层包括金属红外反射层，以及分别设置在所述金属红外反射层两侧的第一保护层和第二保护层。
  5. 根据权利要求4所述的钙钛矿电池，其特征在于，
    所述金属红外反射层包含：银、铝和金中的至少一种，所述金属红外反射层的厚度为1-30纳米；
    所述第一保护层和所述第二保护层包含：氧化铝、氧化硅和氮化硅中的至少一种，所述第一保护层和所述第二保护层的厚度为1-100纳米。
  6. 根据权利要求4所述的钙钛矿电池，其特征在于，所述金属红外反射层的厚度小于10纳米，所述第一保护层和所述第二保护层的厚度小于30纳米。
  7. 根据权利要求1所述的钙钛矿电池，其特征在于，所述光学调节层包括至少一层低折射率调节层和至少一层高折射率调节层；
    所述至少一层低折射率调节层和所述至少一层高折射率调节层间隔设置。
  8. 根据权利要求7所述的钙钛矿电池，其特征在于，
    所述低折射率调节层包含折射率小于或等于第一预设折射率的低折射率材料，所述高折射率调节层包含折射率大于或等于第二预设折射率的高折射率材料，所述第一预设折射率小于或等于所述第二预设折射率；
    根据红外光的波长和所述预设反射率，确定所述低折射率材料和所述高折射率材料对应的折射率、所述低折射率调节层和所述高折射率调节层的厚度，以及所述低折射率调节层和所述高折射率调节层的数量。
  9. 根据权利要求8所述的钙钛矿电池，其特征在于，
    所述低折射率材料包含：氧化硅、氮氧化硅、氟化钠、氟化锂、氟化镁和氟化钙中的至少一种；
    所述高折射率材料包含：氮氧化硅、氮氧化铝，硫化钨、硫化钼、硫化铅，碳化硼、碳化硅、锑化铝、锑化镓、锑化铟，硒化铋、硒化钼、硒化铅、硒化钨、碲化锌、碲化铅和碲化钼中的至少一种。
  10. 根据权利要求7所述的钙钛矿电池，其特征在于，
    所述低折射率调节层的折射率小于或等于1.7，所述高折射率调节层的折射率大于或等于2.5，所述低折射率调节层和所述高折射率调节层的数量大于或等于1，且小于或等于5。
  11. 根据权利要求1所述的钙钛矿电池，其特征在于，所述钙钛矿电池还包括：上转换发光层；
    所述上转换发光层设置在所述第二载流子传输层和所述光学调节层之间。
  12. 根据权利要求11所述的钙钛矿电池，其特征在于，所述上转换发光层的厚度小于或等于1000纳米；
    所述上转换发光层的带隙大于或等于3.0电子伏特。
  13. 根据权利要求1-12任一项所述的钙钛矿电池，其特征在于，所述钙钛矿电池还包括：导电结构；
    所述光学调节层中设置有贯穿所述光学调节层的通孔，所述导电结构设置在所述光学调节层的通孔中，所述导电结构的一端与所述第二载流子传输层连接，所述导电结构的另一端与所述第二透明电极层连接。
  14. 根据权利要求13所述的钙钛矿电池，其特征在于，所述导电结构包含：掺铟氧化锡、掺铝氧化锌、金属材料和包含多种金属的混合材料中的至少一种。
  15. 根据权利要求1-12任一项所述的钙钛矿电池，其特征在于，所述钙钛矿光吸收层包含：有机-无机卤化物钙钛矿、全无机钙钛矿、无铅钙钛矿和双钙钛矿中的至少一种；
    所述钙钛矿光吸收层的带隙大于或等于1.5电子伏特。
  16. 根据权利要求1-12任一项所述的钙钛矿电池，其特征在于，所述第一透明电极层和所述第二透明电极层包含：氧化铟锡导电玻璃、掺杂氟的二氧化锡导电玻璃和铝掺杂的氧化锌导电玻璃中的至少一种；
    所述第一透明电极层和所述第二透明电极层对于可见光的透过率大于90％，所述第二透明电极层的方块电阻小于或等于10欧姆/正方。
  17. 一种光伏组件，其特征在于，包括权利要求1-16中任一项所述的钙钛矿电池。
PCT/CN2022/091968 2021-08-04 2022-05-10 一种钙钛矿电池及光伏组件 Ceased WO2023010933A1 (zh)

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