WO2023028787A1 - 显示基板及显示装置 - Google Patents

显示基板及显示装置 Download PDF

Info

Publication number
WO2023028787A1
WO2023028787A1 PCT/CN2021/115470 CN2021115470W WO2023028787A1 WO 2023028787 A1 WO2023028787 A1 WO 2023028787A1 CN 2021115470 W CN2021115470 W CN 2021115470W WO 2023028787 A1 WO2023028787 A1 WO 2023028787A1
Authority
WO
WIPO (PCT)
Prior art keywords
layer
light
encapsulation layer
sub
display substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/CN2021/115470
Other languages
English (en)
French (fr)
Inventor
孙海雁
张晓晋
王斯琦
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
BOE Technology Group Co Ltd
Original Assignee
BOE Technology Group Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by BOE Technology Group Co Ltd filed Critical BOE Technology Group Co Ltd
Priority to EP21955366.6A priority Critical patent/EP4280256B1/en
Priority to PCT/CN2021/115470 priority patent/WO2023028787A1/zh
Priority to CN202180002359.0A priority patent/CN116097928B/zh
Priority to US17/794,626 priority patent/US12543486B2/en
Publication of WO2023028787A1 publication Critical patent/WO2023028787A1/zh
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

Links

Images

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/80—Constructional details
    • H10K59/8791—Arrangements for improving contrast, e.g. preventing reflection of ambient light
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/80—Constructional details
    • H10K59/8793—Arrangements for polarized light emission
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/50—OLEDs integrated with light modulating elements, e.g. with electrochromic elements, photochromic elements or liquid crystal elements
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/80—Constructional details
    • H10K59/87—Passivation; Containers; Encapsulations
    • H10K59/873—Encapsulations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/80—Constructional details
    • H10K59/875—Arrangements for extracting light from the devices
    • H10K59/879—Arrangements for extracting light from the devices comprising refractive means, e.g. lenses
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K2102/00—Constructional details relating to the organic devices covered by this subclass
    • H10K2102/301—Details of OLEDs
    • H10K2102/351—Thickness

Definitions

  • Embodiments of the present disclosure relate to, but are not limited to, the field of display technology, and specifically relate to a display substrate and a display device.
  • AMOLED Active matrix organic light-emitting diodes
  • OLED organic light-emitting diode
  • Some organic light-emitting diode (OLED) display panels use electrodes with strong reflection characteristics, and strong reflection of external light in a bright field of view will greatly reduce the contrast of the panel.
  • Anti-reflection optical structures are usually used to improve the visibility of the panel. sex.
  • the general anti-reflection film structure contains a linear polarizer, which will cause a great loss of the luminance of the panel itself (not less than 50%), which in turn causes many problems such as increased power consumption and life loss.
  • An embodiment of the present disclosure provides a display substrate, including a light emitting element disposed on a substrate, and an encapsulation layer, a connection layer, a light extraction layer, a polarization conversion layer, and a polarizing layer sequentially stacked on the light emitting side of the light emitting element;
  • the light extraction layer is configured to convert at least a part of the light emitted by the light-emitting element that is incident on the light extraction layer into circularly polarized light with a predetermined hand direction and transmit it;
  • the circularly polarized light of the light extraction layer is converted into linearly polarized light, and the polarization direction of the linearly polarized light is parallel to the light transmission axis direction of the polarizing layer;
  • the connection layer is configured to connect the light extraction layer and the package Layer bonding, the thickness of the connection layer is greater than 3 times the thickness of the light extraction layer, and the difference between the refractive index of the connection layer and the refractive index of the film layer close to the connection layer
  • An embodiment of the present disclosure also provides a display device, including the display substrate.
  • FIG. 1 is a schematic diagram of the film layer structure of a display substrate in some exemplary embodiments
  • FIG. 2 is a schematic cross-sectional structure diagram of the display substrate of FIG. 1 in some exemplary embodiments
  • Figure 3 shows the light emitted by the light-emitting elements of the red sub-pixel, green sub-pixel and blue sub-pixel of the display substrate in some exemplary embodiments passing through the light extraction layer, polarization conversion layer, half phase retardation film and polarizing layer in sequence schematic diagram;
  • Fig. 4 is the wavelength dispersion graph of three different polarization conversion film materials
  • Fig. 5a is a light output effect diagram after external ambient light is incident into the display substrate from the polarizing layer and exits from the quarter phase retardation film with positive wavelength dispersion;
  • Fig. 5b is a light output effect diagram after external ambient light is incident into the display substrate from the polarizing layer and exits from the quarter phase retardation film with reverse wavelength dispersion;
  • FIG. 6 is a graph of transmittance when the display substrate of some exemplary embodiments uses connection layers with different thicknesses
  • FIG. 7 is a graph of transmittance of relevant film layers to external ambient light when connecting layers with different thicknesses are used in the display substrate of some exemplary embodiments.
  • anode 302, hole injection layer, 303, hole transport layer, 3041, electron blocking layer of red sub-pixel, 3042, electron blocking layer of green sub-pixel, 3043, electron blocking layer of blue sub-pixel, 3051 , the light-emitting layer of the red sub-pixel, 3052, the light-emitting layer of the green sub-pixel, 3053, the light-emitting layer of the blue sub-pixel, 306, the hole blocking layer, 307, the electron transport layer, 308, the electron injection layer, 309, the cathode;
  • encapsulation layer 601, encapsulation layer, 602, connection layer, 603, light extraction layer, 604, polarization conversion layer, 605, half phase retardation film, 606, polarizing layer.
  • FIG. 1 is a schematic diagram of the film layer structure of the display substrate in some exemplary embodiments
  • FIG. 1 the schematic cross-sectional structure of the display substrate
  • FIG. 3 is a display substrate in some exemplary embodiments, the light emitted by the light-emitting elements of the red sub-pixel, green sub-pixel and blue sub-pixel passes through the light extraction layer, the polarization conversion layer, and the second Schematic diagram of one-fifth phase retardation film and polarizing layer.
  • the display substrate includes a light-emitting element 310 (shown in FIG.
  • encapsulation layer 601 a connection layer 602, a light-extracting layer 603, and a polarization conversion layer sequentially stacked on the light-emitting side of the light-emitting element 310.
  • the light extraction layer 603 is configured to convert at least a part of the light emitted by the light emitting element 310 incident on the light extraction layer 603 into circularly polarized light with a set hand direction and transmit it;
  • the polarization conversion layer 604 is configured to convert circularly polarized light passing through the light extraction layer 603 into linearly polarized light, and the polarization direction of the linearly polarized light is parallel to the light transmission axis direction of the polarizing layer 606;
  • the connection layer 602 is set to bond the light extraction layer 603 and the encapsulation layer 601, the thickness of the connection layer 602 is greater than 3 times the thickness of the light extraction layer 603, and the refractive index of the connection layer 602 is the same as The difference in refractive index of the film layers of the encapsulation layer 601 close to the connection layer 602 is greater than 0.25.
  • the light extraction layer 603 is configured to convert at least a part of the light emitted by the light emitting element 310 incident on the light extraction layer 603 into circularly polarized light with a set hand direction and transmit it , the circularly polarized light passing through the light extraction layer 603 can be converted into linearly polarized light after passing through the polarization conversion layer 604, and the polarization direction of the linearly polarized light is parallel to the light transmission axis direction of the polarizing layer 606, then the linearly polarized light can be It transmits through the polarizing layer 606 almost without loss.
  • connection layer 602 so that the thickness of the connection layer 602 is greater than three times the thickness of the light extraction layer 603, the refractive index of the connection layer 602 is the same as that of the film layer of the encapsulation layer 601 close to the connection layer 602.
  • the difference in refractive index is greater than 0.25, which is beneficial to reduce the loss of light passing through the connection layer 602, improve the light extraction efficiency of the display substrate, and reduce the interference fringe phenomenon generated after the external ambient light is incident on the display substrate, thereby improving the performance of the display substrate. Shows the anti-reflection effect of the substrate.
  • the refractive index of the connecting layer 602 may be 1.35 to 1.65.
  • the thickness of the connection layer 602 may be 5 ⁇ m to 40 ⁇ m, and the thickness of the light extraction layer 603 may be 1 ⁇ m to 30 ⁇ m.
  • the connection layer 602 can play the role of assisting light extraction, and the role of bonding the encapsulation layer 601 and the light extraction layer 603 .
  • the display substrate may include multiple sub-pixels configured to display different colors, and each sub-pixel includes a light emitting element.
  • FIG. 1 illustrates three color sub-pixels, which are red sub-pixel R, green sub-pixel G and blue sub-pixel B respectively.
  • the light emitting element 310 may include an anode 301 , a light emitting layer 3053 and a cathode 309 sequentially stacked along a direction away from the substrate 101 . As shown in FIG.
  • the light extraction layer 603 is also configured to convert another part of the light emitted by the light emitting element 310 that is incident on the light extraction layer 603 into circularly polarized light that is opposite to the set rotation direction. and reflection, the circularly polarized light reflected by the light extraction layer 603 opposite to the set hand direction is reflected by the cathode 309 and converted into the same circularly polarized light as the set hand direction, and can pass through the set
  • the light extraction layer 603 is described. In this way, the circularly polarized light reflected by the light extraction layer 603 can be recycled through the reflection effect of the cathode 309, reducing light loss and improving light extraction efficiency.
  • a reflection layer may be provided on the side of the cathode 309 away from the substrate 101 , and the reflection layer is used to reflect the circularly polarized light reflected by the light extraction layer 603 .
  • the light emitting element 310 may be a top-emitting OLED device.
  • the anode 301 of the top-emitting OLED device can adopt a composite film structure of a metal layer with high reflectivity and high work function and a transparent metal oxide layer, such as Ag/ITO (silver/indium tin oxide), Ag/IZO (silver/ indium zinc oxide) or ITO/Ag/ITO, etc., wherein the thickness of the metal layer can be 80nm to 100nm, and the thickness of the metal oxide layer can be 5nm to 10nm.
  • the average reflectance of the anode 301 in the visible region may be 85% to 95%.
  • the anode 301 can be formed by magnetron sputtering, etching and other processes.
  • the cathode 309 can be made of a metal material, such as magnesium, silver or aluminum, or an alloy material (for example, a magnesium-silver alloy, the ratio of magnesium to silver can be 3:7 to 1:9); the transparency of the cathode 309 to 530nm light The pass ratio can be 50% to 60% to form a semi-transparent cathode; alternatively, the cathode 309 can be made of transparent oxide ITO, IZO, IGZO (indium gallium zinc oxide) and other materials to form a transparent cathode.
  • ITO indium gallium zinc oxide
  • the cathode 309 can be formed by vacuum deposition, and the thickness of the cathode 309 can be 10 nm to 20 nm.
  • the material of the light-emitting layer may include a host material and a fluorescent guest material.
  • a hole injection layer 302, a hole transport Layer 303 and electron blocking layer 3041 , a hole blocking layer 306 , an electron transporting layer 307 and an electron injection layer 308 stacked in sequence may also be arranged between the light emitting layer 3051 and the cathode 309 . All film layers between the anode 301 and the cathode 309 may be called organic functional layers.
  • the light extraction layer 603 may include a cholesteric liquid crystal material (or may be called a chiral nematic liquid crystal), having a cured chiral direction (such as left-handed).
  • the light extraction layer 603 includes a cholesteric liquid crystal layer
  • the cholesteric liquid crystal layer may be a mixture of a nematic liquid crystal monomer containing photopolymerization properties and a chiral agent (the doping of the chiral agent
  • the miscellaneous ratio can be less than 20%, such as less than 10%
  • a polymer-stabilized cholesteric liquid crystal film with a fixed hand direction formed by photocuring and the prepared cholesteric liquid crystal film is pasted on the connecting layer 602
  • the light extraction layer 603 may not contain substrates such as PET (polyethylene terephthalate), PMMA (polymethyl methacrylate), and the like.
  • the cholesteric liquid crystal layer (light extraction layer 603) can be set as a part (may be 50%) of the natural light incident to the set wavelength range (such as blue light) of the cholesteric liquid crystal layer.
  • the light is converted into circularly polarized light opposite to its chiral direction (such as right-handed) and transmitted, and another part of the natural light (which can be 50% of the light) in the set wavelength range is converted into its chiral Circularly polarized light with the same direction (such as left-handed) is reflected and reflected; the circularly polarized light reflected by the cholesteric liquid crystal layer with the same chiral direction (such as left-handed) is reflected by the cathode 309 and then reversed (such as The left-handed direction is reversed to the right-handed direction), and becomes circularly polarized light (such as right-handed direction) that can pass through the cholesteric liquid crystal layer.
  • the reflectivity of the cathode 309 is calculated at 50%, more than 75% of the light emitted by the light-emitting element 310 can pass through the cholesteric liquid crystal layer, and has circular polarization with a fixed handedness (such as right handedness). characteristic.
  • the circularly polarized light passing through the light extraction layer 603 is converted into linearly polarized light after passing through the polarization conversion layer 604, and the polarization direction of the linearly polarized light is parallel to the light transmission axis direction of the polarizing layer 606, then the set wavelength range ( Natural light such as blue light can pass through the polarizing layer 606 almost without loss.
  • the cholesteric liquid crystal layer can also be set so that the natural light outside the set wavelength range (such as red light and green light) incident on the cholesteric liquid crystal layer does not produce a polarization state change, that is, the set Natural light outside the wavelength range is still natural light after being incident on the cholesteric liquid crystal layer and passing through.
  • the natural light outside the set wavelength range such as red light and green light
  • phosphorescent materials are used as the light-emitting materials of red-light OLED devices and green-light OLED devices
  • fluorescent materials are used as light-emitting materials for blue-light OLED devices due to life issues. Due to the difference in the light emitting mechanism of phosphorescent materials and fluorescent materials, the fluorescent efficiency is much lower than the phosphorescent efficiency, so the blue light extraction efficiency of the display substrate is much lower than that of red light and green light.
  • Some technologies optimize the light-emitting system of blue-light emitting materials to improve the blue-light extraction efficiency of display substrates, but it is difficult to take into account the efficiency and life of blue-light OLED devices, and cannot meet mass production requirements.
  • the light extraction layer 603 can be configured to convert the light with a wavelength range of 400nm to 500nm into the circularly polarized light of the set hand direction and transmit it;
  • the transmittance of light of 400nm to 500nm is 35% to 65% (such as 40% to 55%), and the transmittance of light with a wavelength greater than 500nm is greater than 90% (such as greater than 95%).
  • 400nm to 500nm is the wavelength range of blue light, therefore, as shown in FIG.
  • the circularly polarized light of the set direction is transmitted and transmitted, and the other part is converted into the circularly polarized light opposite to the set direction and reflected. In this way, the blue light extraction efficiency of the display substrate can be improved.
  • the light extraction layer 603 does not change the polarization state of the red light emitted by the red OLED device and the green light emitted by the green OLED device, and the red light and green light are still natural light after passing through the light extraction layer 603, and the light extraction Layer 603 may have a transmittance greater than 90% for red and green light.
  • the polarization conversion layer 604 may be a quarter phase retardation film, and the quarter phase retardation film may have reverse wavelength dispersion, namely , as the wavelength of the incident light increases, the optical path difference between the o-ray (ordinary light) and the e-ray (extraordinary light) generated by the quarter phase retardation film after the birefringence of the incident light increases, correspondingly, The optical path difference ratio R/R 0 increases, wherein, R is the optical path difference between the o light and the e light generated by the birefringence of the incident light by a quarter of the phase retardation film, and R 0 is the quarter
  • the phase retardation film birefringences the incident center wavelength light (such as 580nm green light) to produce the optical path difference between o light and e light.
  • Figure 4 is a graph of the wavelength dispersion of three different polarization conversion films, wherein the optical path difference ratio R/R 0 of the polarization conversion film a and the polarization conversion film b increases with the incident light Increases with the wavelength of the incident light, and has inverse wavelength dispersion; the optical path difference ratio R/R 0 of the polarization conversion film material c decreases with the increase of the wavelength of the incident light, and has positive wavelength dispersion.
  • the quarter phase retardation film has positive wavelength dispersion, after the external ambient light enters the display substrate from the polarizing layer and exits through the polarization conversion layer, due to the center of the quarter phase retardation film
  • the wavelength (such as 580nm) is green light, so the emitted light of green light is close to circularly polarized light, while the emitted light of red light and blue light are both elliptically polarized light, as shown in Figure 5a, which shows that the external ambient light is incident from the polarizing layer to the It shows the light output effect diagram after exiting from the quarter phase retardation film with positive wavelength dispersion in the substrate; in this way, the elliptically polarized light of red light and blue light exiting from the polarization conversion layer is reflected by the cathode, and then in After passing through the polarization conversion layer, the elliptically polarized light is still elliptically polarized.
  • the quarter phase retardation film has inverse wavelength dispersion, so that after the external ambient light enters the display substrate from the polarizing layer and exits through the polarization conversion layer, red light, blue light and green light The output of light is close to circularly polarized light, as shown in Figure 5b.
  • Figure 5b shows the light output effect after the external ambient light enters the display substrate from the polarizing layer and exits from the quarter phase retardation film with reverse wavelength dispersion.
  • the quarter phase retardation film may satisfy: 0.78 ⁇ R B /R 0 ⁇ 1.1, 0.9 ⁇ R G /R 0 ⁇ 1.1, 1 ⁇ R R /R 0 ⁇ 1.1;
  • R 0 is the optical path difference between o light and e light generated by the quarter phase retardation film after the incident central wavelength light (such as 580nm green light) is birefringent
  • R B is the optical path difference between the four The optical path difference between o light and e light generated by the one-quarter phase retardation film after the birefringence of the incident blue light
  • RR is the optical path difference between the o-light and the e-light generated by the quarter phase retardation film after the birefringence of the incident red light.
  • the display substrate may further include a half phase retardation film 605 disposed between the polarization conversion layer 604 and the polarizing layer 606, In this way, when the external ambient light enters the display substrate from the polarizing layer 606, and passes through the 1/2 phase retardation film 605 and the 1/4 phase retardation film with reverse wavelength dispersion in sequence, the red light, blue light and green light The emitted light will be closer to the circularly polarized light, and then the circularly polarized light will be reflected by the cathode 309 and finally absorbed when passing through the polarizing layer 606, which can increase the anti-reflection effect.
  • a half phase retardation film 605 disposed between the polarization conversion layer 604 and the polarizing layer 606, In this way, when the external ambient light enters the display substrate from the polarizing layer 606, and passes through the 1/2 phase retardation film 605 and the 1/4 phase retardation film with reverse wavelength dispersion in sequence, the red light, blue light and green light The emitted light will be closer to the circular
  • the quarter retardation film and the half retardation film may be a liquid crystal material layer or a polymer film layer.
  • the liquid crystal material can be discotic liquid crystal or cholesteric liquid crystal, and can be prepared into a film by coating.
  • the encapsulation layer 601 includes a plurality of stacked film layers, and the refractive index of the encapsulation layer 601 can be high or low along the direction away from the substrate 101 alternately.
  • the refractive index of the encapsulation layer 601 can be high or low along the direction away from the substrate 101 alternately.
  • one film layer has a refractive index of 1.3 to 1.7, and the other film layer has a refractive index of 1.7 to 2.3.
  • the light-emitting element includes an anode, a light-emitting layer, and a cathode stacked in sequence along a direction away from the substrate; ) between the cover layer (CPL for short);
  • the encapsulation layer may include a first inorganic encapsulation layer, an organic encapsulation layer and a second inorganic encapsulation layer stacked in sequence along a direction away from the substrate; the first inorganic encapsulation layer
  • the layer may include one or more film layers, and when the first inorganic encapsulation layer includes one film layer, the refractive index of the first inorganic encapsulation layer is higher than that of the organic encapsulation layer; when the first inorganic encapsulation layer When the inorganic encapsulation layer includes multiple film layers, the refraction index of the film layer close to the organic encapsulation layer in the first inorganic encapsulation layer is higher than that of the organic encapsulation layer.
  • the difference between the refractive index of the covering layer and the refractive index of the film layer of the encapsulation layer close to the covering layer may be greater than 0.1.
  • the first inorganic encapsulation layer includes a film layer, and the refractive index of the first inorganic encapsulation layer may be higher than that of the covering layer (the covering layer may be a film layer). or, the covering layer may include a first sub-covering layer and a second sub-covering layer stacked in sequence along a direction away from the substrate, and the refractive index of the first sub-covering layer is higher than that of the second sub-covering layer The refractive index of the covering layer, the refractive index of the second sub-covering layer is lower than the refractive index of the first inorganic encapsulation layer.
  • the material of the covering layer is an aromatic amine or oxazine organic material (for example, the second sub-covering layer can be adjusted by adjusting the molecular structure of the organic material forming the first sub-covering layer and the second sub-covering layer.
  • the refractive index of the first sub-covering layer and the second sub-covering layer), the material of the first inorganic encapsulation layer is silicon nitride or silicon oxynitride, the material of the organic encapsulation layer is a resin material, and the second inorganic encapsulation layer
  • the layer material is silicon nitride or silicon oxynitride.
  • the refractive index of the covering layer may be 1.3 to 1.7, or, the covering layer includes the first sub-covering layer and the second sub-covering layer, The refractive index of the first sub-covering layer may be 1.7 to 2.3, the refractive index of the second sub-covering layer may be 1.3 to 1.7; the refractive index of the first inorganic encapsulation layer may be 1.7 to 2.3, the The refractive index of the organic encapsulation layer may be 1.3 to 1.7, and the refractive index of the second inorganic encapsulation layer may be 1.7 to 2.3.
  • the refractive index of the composite structure layer formed by the combination of the covering layer and the encapsulation layer changes alternately from high to low along a direction away from the substrate.
  • the first inorganic encapsulation layer may include a first sub-inorganic encapsulation layer and a second sub-inorganic encapsulation layer stacked in sequence along a direction away from the substrate, and the first sub-inorganic encapsulation layer
  • the refractive index of the sub-inorganic encapsulation layer may be lower than that of the second sub-inorganic encapsulation layer; the refractive index of the covering layer is higher than that of the first sub-inorganic encapsulation layer.
  • the material of the first sub-inorganic encapsulation layer may be lithium fluoride or silicon dioxide
  • the material of the second sub-inorganic encapsulation layer may be silicon nitride or silicon oxynitride
  • the organic encapsulation layer The material is a resin material
  • the material of the second inorganic encapsulation layer is silicon nitride or silicon oxynitride
  • the material of the covering layer may be an aromatic amine or oxazine organic material.
  • the thickness of the covering layer is 50nm to 150nm
  • the thickness of the first sub-inorganic encapsulation layer is 40nm to 100nm
  • the thickness of the second sub-inorganic encapsulation layer is 500nm to 2000nm
  • the thickness of the second inorganic encapsulation layer is 400nm to 1000nm.
  • the thickness of the covering layer is 80nm to 100nm
  • the thickness of the first sub-inorganic encapsulation layer is 50nm to 70nm
  • the thickness of the second sub-inorganic encapsulation layer is 800nm to 1200nm
  • the thickness of the second inorganic encapsulation layer is 500nm to 700nm.
  • the total transmittance of the composite structure layer formed by the combination of the cover layer and the encapsulation layer to visible light may not be lower than 90%.
  • the materials of the first sub-inorganic encapsulation layer and the second sub-inorganic encapsulation layer can be both silicon oxynitride, and the silicon oxynitride that forms the first sub-inorganic encapsulation layer and the second sub-inorganic encapsulation layer can be adjusted.
  • the ratio of nitrogen to oxygen is used to adjust the refractive index of the first sub-inorganic encapsulation layer and the second sub-inorganic encapsulation layer.
  • the refractive index of the cover layer may be 1.7 to 2.3
  • the refractive index of the first sub-inorganic encapsulation layer may be 1.3 to 1.7
  • the refractive index of the second sub-inorganic encapsulation layer may be 1.7 to 2.3
  • the refractive index of the organic encapsulation layer may be 1.3 to 1.7
  • the refractive index of the second inorganic encapsulation layer may be 1.7 to 2.3.
  • the refractive index of the composite structure layer formed by the combination of the covering layer and the encapsulation layer changes alternately from high to low along a direction away from the substrate.
  • the encapsulation layer 601 may include three or more film layers stacked, and the refractive index of at least one film layer in the encapsulation layer 601 is The difference with the refractive index of the connection layer 602 is less than or equal to 0.2, and the refractive index of at least two film layers in the packaging layer 601 is greater than 1.65.
  • the following compares the influence of different thicknesses of the connection layer on the light transmittance and anti-reflection effect of the display substrate.
  • Example 1 OLED light-emitting element/encapsulation layer/connection layer 1 (10 ⁇ m)/light extraction layer (5 ⁇ m)/polarization conversion layer/polarization layer
  • Example 2 OLED light-emitting element/encapsulation layer/connection layer 2 (25 ⁇ m)/light extraction layer (5 ⁇ m)/polarization conversion layer/polarization layer
  • Film layer structure 1 polarizing layer/polarization conversion layer/light extraction layer/connection layer 1 (thickness is twice that of the light extraction layer)
  • Film layer structure 2 polarizing layer/polarization conversion layer/light extraction layer/connection layer 2 (5 times the thickness of the light extraction layer)
  • Fig. 6 is the transmittance curve graph of the display substrate of embodiment 1 and embodiment 2
  • the curve A1 is the transmittance curve graph of the display substrate of embodiment 1
  • the curve A2 is the display of embodiment 2
  • the transmittance curve of the substrate It can be seen that the transmittance of the display substrate of Example 2 is significantly higher than that of the display substrate of Example 1.
  • the transmittance of the display substrate of Example 2 is significantly higher than that of the display substrate of Example 1.
  • the increase rate is higher, which is more conducive to improving the light extraction efficiency of blue light.
  • Fig. 7 is the transmittance curve graph of above-mentioned film layer structure 1 and film layer structure 2 to external environment light
  • curve A1 is the transmittance curve figure of film layer structure 1 to external environment light
  • curve A2 is the transmittance curve of the film structure 2 to the external ambient light. It can be seen that when the external ambient light is incident, the film structure 1 appears obvious interference fringes, and the film structure 2 does not appear obvious interference fringes, so , the film layer structure 2 has a better anti-reflection effect than the film layer structure 1.
  • the display substrate includes a display area, and the display area includes a plurality of pixel units arranged in an array, and the pixel units include red sub-pixels R, green Sub-pixel G and blue sub-pixel B, each sub-pixel includes a light-emitting element 310; any one of the following film layers of all sub-pixels in the display area is connected into an integrated structure and covers the display area: the encapsulation layer 601, The connecting layer 602 , the light extraction layer 603 , the polarization conversion layer 604 and the polarizing layer 606 .
  • the display substrate includes a driving circuit layer 102, a light emitting structure layer 103, an encapsulation layer 601, a connection layer 602, and a light extraction layer sequentially stacked on a base 101. layer 603 , polarization conversion layer 604 , half phase retardation film 605 and polarizing layer 606 .
  • the driving circuit layer 102 includes a plurality of pixel driving circuits
  • the light emitting structure layer 103 includes a plurality of light emitting elements 310, and each light emitting element 310 is connected to a corresponding pixel driving circuit.
  • the display substrate may include a plurality of pixel units arranged in an array, each pixel unit may include sub-pixels of multiple colors, multiple sub-pixels of the same color may be referred to as the same sub-pixel, and each sub-pixel includes a light emitting element 310 .
  • the light-emitting element 310 is a top-emitting OLED device, and each pixel unit includes sub-pixels of three colors, such as a red sub-pixel R, a green sub-pixel G, and a blue sub-pixel B, and the light-emitting element of each color sub-pixel 310 emits light of the color displayed by the sub-pixel, for example, the light-emitting element (may be referred to as a red light-emitting element) 310 of the red sub-pixel R emits red light.
  • the light-emitting element may be referred to as a red light-emitting element
  • the substrate 101 may be glass, transparent polyimide, or other rigid or flexible substrates, and the refractive index may be 1.3 to 1.5.
  • the driving circuit layer 102 may include a plurality of transistors and storage capacitors constituting a pixel driving circuit.
  • each pixel driving circuit includes one driving transistor 210 and one The storage capacitor 211 is illustrated as an example.
  • the driving circuit layer 102 may include: a first insulating layer disposed on the substrate 101; an active layer disposed on the first insulating layer; a second insulating layer covering the active layer; disposed on The gate electrode and the first capacitance electrode on the second insulating layer; the third insulating layer covering the gate electrode and the first capacitance electrode; the second capacitance electrode arranged on the third insulation layer; the fourth insulation covering the second capacitance electrode layer, the second insulating layer, the third insulating layer and the fourth insulating layer are provided with via holes, and the via holes expose the active layer; the source electrode and the drain electrode arranged on the fourth insulating layer, the source electrode and the drain electrode are respectively Connect to the active layer through corresponding via holes; cover the planar layer of the aforementioned structure, and open a via hole on the planar layer, and the drain electrode is exposed through the via hole.
  • the active layer, the gate electrode, the source electrode and the drain electrode form the drive transistor 210 , and the first capacitor electrode and the first capacitor
  • the light emitting structure layer 103 may include an anode 301, a pixel definition layer 510, a cathode 309, and an organic functional layer located between the anode 301 and the cathode 309, the organic functional layer
  • the layers at least include a light emitting layer (3051 for the red sub-pixel R in the example of FIG. 1 and FIG. 2, 3052 for the green sub-pixel G, and 3053 for the blue sub-pixel B), and the organic functional layer also may include the hole injection layer 302, the hole transport layer 303, the electron blocking layer (in the example of FIG. 1 and FIG.
  • the electron blocking layer of the blue sub-pixel B is 3043 ), the hole blocking layer 306 , the electron transport layer 307 and the electron injection layer 308 .
  • the anode 301 is disposed on the flat layer of the driving circuit layer 102 and connected to the drain electrode of the driving transistor 210 through a via hole opened on the flat layer.
  • the pixel definition layer 510 is arranged on the side of the anode 301 away from the substrate 101, the pixel definition layer 510 is provided with a pixel opening, the pixel definition layer 510 covers the part of the surface of the anode 301 near the circumferential edge, and the pixel opening covers the rest of the surface of the anode 301 Partially exposed, the part of the surface of the anode 301 exposed by the pixel opening is sequentially stacked with multiple film layers of the organic functional layer and the cathode 309 .
  • the anode 301, organic functional layer and cathode 303 of each sub-pixel form an OLED device (light-emitting element), which is configured to emit light of a corresponding color under the drive of a corresponding pixel driving circuit.
  • the light emitting structure layer 103 may also include other film layers, such as spacer pillars disposed on the pixel definition layer 510 .
  • the following preparation method can be used to prepare a display substrate including an OLED device.
  • a driving circuit layer 102 is formed on a substrate through a patterning process, and the driving circuit layer 102 may include a driving transistor 210 and a storage capacitor 211 constituting a pixel driving circuit.
  • a planar layer is formed on the substrate on which the aforementioned structure is formed, and a via hole exposing the drain electrode of the driving transistor 210 is formed on the planar layer.
  • a plurality of anodes 301 are formed through a patterning process on the substrate on which the aforementioned structure is formed, and the anode 301 of each sub-pixel is connected to the drain electrode of the corresponding driving transistor 210 of the pixel driving circuit through a via hole in the planar layer.
  • a pixel definition layer 510 is formed through a patterning process, and a pixel opening exposing the anode 301 is formed on the pixel definition layer 510 of each sub-pixel, and each pixel opening serves as a light-emitting area of each sub-pixel .
  • the hole injection layer 302 and the hole transport layer 303 are sequentially vapor-deposited using an open mask.
  • the hole injection layer 302 and the hole transport layer 303 are a common layer, that is, all The hole injection layer 302 of a pixel is integrally connected, and the hole transport layer 303 of all sub-pixels is integrally connected.
  • the hole injection layer 302 and the hole transport layer 303 have approximately the same area and different thicknesses.
  • the electron blocking layer 3041 and light-emitting layer 3051 of the red sub-pixel R, and the electron blocking layer 3042 of the green sub-pixel G are respectively vapor-deposited in the red sub-pixel R, the green sub-pixel G, and the blue sub-pixel B by using a fine metal mask.
  • the light emitting layer 3052, and the electron blocking layer 3043 and the light emitting layer 3053 of the blue sub-pixel B, the electron blocking layer and the light emitting layer of adjacent sub-pixels may have a small amount of overlapping or may be isolated.
  • the hole blocking layer 306, the electron transport layer 307, the electron injection layer 308, and the cathode 309 are successively evaporated using an open mask, and the hole blocking layer 306, the electron transport layer 307, the electron injection layer 308, and the cathode 309 are all
  • the common layer that is, the hole blocking layer 306 of all sub-pixels is connected integrally, the electron transport layer 307 of all sub-pixels is connected integrally, the electron injection layer 308 of all sub-pixels is connected integrally, and the cathode 309 of all sub-pixels is connected integrally. are connected as one.
  • an encapsulation layer 601 , a connection layer 602 , a light extraction layer 603 , a polarization conversion layer 604 , a half phase retardation film 605 and a polarizing layer 606 are sequentially formed on the side of the cathode 309 away from the substrate 101 .
  • multi-source co-evaporation may be used to vapor-deposit the light-emitting layer to form a light-emitting layer including a host material and a dopant material, and the dopant material may be a fluorescent light-emitting material.
  • the doping concentration of the dopant material can be adjusted by controlling the evaporation rate of the dopant material, or the doping concentration of the dopant material can be adjusted by controlling the ratio of the evaporation rates of the host material and the dopant material.
  • the hole injection layer can use HATCN (2,3,6,7,10,11-hexacyano-1,4,5,8,9,12-hexaazabenzene and phenanthrene), CuPc (copper phthalocyanine) at least one preparation.
  • HATCN 2,3,6,7,10,11-hexacyano-1,4,5,8,9,12-hexaazabenzene and phenanthrene
  • CuPc copper phthalocyanine
  • the hole injection layer can also be prepared by using a mixed material of a hole transport material (host material) and a p-type dopant material, wherein the doping concentration of the p-type dopant material is 0.5% to 10%, for example, the hole
  • the material of the hole injection layer can be: F 4 TCNQ (2,3,5,6-tetrafluoro-7,7',8,8'-tetracyanodimethyl-p-benzoquinone) doped in NPB (N,N '-bis(1-naphthyl)-N,N'-diphenyl-1,1'-biphenyl-4-4'-diamine), namely NPB: F 4 TCNQ, or, MoO 3 (molybdenum trioxide) doped in TAPC (4,4'-cyclohexylbis[N,N-bis(4-methylphenyl)aniline]), that is, TAPC:MoO 3 .
  • the thickness of the hole injection layer
  • the material of the hole transport layer may be a material such as carbazole with high hole mobility.
  • a highest occupied molecular orbital (HOMO) energy level of the hole transport layer may be between -5.2eV to -5.6eV.
  • the hole transport layer may have a thickness of 100 nm to 200 nm. The function of the hole transport layer is to increase the hole transport rate, and can also reduce the hole injection barrier and improve the hole injection efficiency.
  • the main function of the electron blocking layer is to transfer holes and block electrons and excitons generated in the light emitting layer.
  • the material of the electron blocking layer may be materials such as carbazoles.
  • the electron blocking layer of each color sub-pixel can be separately prepared by evaporation process, and the thickness of the electron blocking layer of the blue sub-pixel can be 1nm to 10nm.
  • the electron blocking layer of the red sub-pixel may have a thickness of 40nm to 60nm.
  • the electron blocking layer of the green sub-pixel may have a thickness of 15nm to 30nm.
  • the light-emitting layer may include a host material responsible for charge transport and a guest material responsible for light emission, and the light-emitting color and spectral characteristics of the light-emitting layer are mainly determined by the guest material.
  • the light-emitting layer material may be a delayed fluorescence material system, and the light-emitting layer material may also include a sensitizer with delayed fluorescence properties.
  • the light-emitting layer of each color sub-pixel can be separately prepared by evaporation process.
  • the thickness of the light emitting layer of the blue sub-pixel may be 15nm to 25nm.
  • the thickness of the light emitting layer of the red sub-pixel may be 25nm to 40nm.
  • the thickness of the light emitting layer of the green sub-pixel may be 25nm to 40nm.
  • the material of the hole blocking layer may be derivatives such as azine and imidazole.
  • the main function of the hole blocking layer is to transfer electrons and block holes and excitons generated in the light-emitting layer from migrating to the side where the cathode is located.
  • the hole blocking layer may have a thickness of 2 nm to 10 nm.
  • the electron transport layer may be prepared by blending derivatives such as thiophenes, imidazoles or azines with lithium quinolate, and the proportion of lithium quinolate may be 30% to 70%.
  • the electron transport layer may have a thickness of 20nm to 40nm.
  • the material of the electron injection layer may be lithium 8-hydroxyquinolate (Liq), lithium fluoride (LiF), lithium (Li), ytterbium (Yb), magnesium (Mg) or calcium (Ca), etc. Material.
  • the thickness of the electron injection layer may be 0.5 nm to 2 nm. The electron injection layer can lower the electron injection barrier and improve the electron injection efficiency.
  • An embodiment of the present disclosure further provides a display device, comprising the display substrate described in any one of the foregoing embodiments.
  • the display device can be any product or component with a display function such as a mobile phone, a tablet computer, a television, a monitor, a notebook computer, a digital photo frame, a navigator, and the like.
  • parallel refers to a state where the angle formed by two straight lines is -10° or more and 10° or less, and thus includes a state where the angle is -5° or more and 5° or less.
  • perpendicular refers to a state where the angle formed by two straight lines is 80° to 100°, and thus includes an angle of 85° to 95°.
  • connection means a fixed connection, or a detachable connection, or Connected integrally;
  • mounted means “connected”, and “fixedly connected” may be directly connected, indirectly connected through an intermediary, or internally connected between two components.

Landscapes

  • Electroluminescent Light Sources (AREA)

Abstract

一种显示基板及显示装置，所述显示基板包括设于基底上的发光元件，以及依次叠设于所述发光元件的出光侧的封装层、连接层、光取出层、偏振转换层和偏光层；所述光取出层设置为将入射到所述光取出层的所述发光元件发出的光的至少一部分转化为设定旋向的圆偏振光并透过；所述偏振转换层设置为将透过所述光取出层的圆偏振光转化为线偏振光，所述线偏振光的偏振方向与所述偏光层的透光轴方向平行；所述连接层设置为将所述光取出层与所述封装层粘接，所述连接层的厚度大于3倍的所述光取出层的厚度，所述连接层的折射率与所述封装层的靠近所述连接层的膜层的折射率的差值大于0.25。

Description

显示基板及显示装置 技术领域
本公开实施例涉及但不限于显示技术领域，具体涉及一种显示基板及显示装置。
背景技术
有源矩阵有机发光二极管(简称AMOLED)由于具有自发光、高对比度、广视角、高色域、响应速度快、低功耗等优点，而广泛应用于具有高分辨率彩色屏幕的终端显示产品。一些有机电致发光二极管(OLED)显示面板因使用具有强反射特性的电极，在明亮视场下外界光线发生强反射会极大降低面板的对比度，通常采用防反射光学结构来提高面板的可视性。但是，通用的防反射膜结构中包含线偏光片，这将造成面板自身发光亮度的极大损失(不低于50％)，进而引起了功耗上升、寿命损失等诸多问题。
发明内容
以下是对本文详细描述的主题的概述。本概述并非是为了限制权利要求的保护范围。
本公开实施例提供一种显示基板，包括设于基底上的发光元件，以及依次叠设于所述发光元件的出光侧的封装层、连接层、光取出层、偏振转换层和偏光层；所述光取出层设置为将入射到所述光取出层的所述发光元件发出的光的至少一部分转化为设定旋向的圆偏振光并透过；所述偏振转换层设置为将透过所述光取出层的圆偏振光转化为线偏振光，所述线偏振光的偏振方向与所述偏光层的透光轴方向平行；所述连接层设置为将所述光取出层与所述封装层粘接，所述连接层的厚度大于3倍的所述光取出层的厚度，所述连接层的折射率与所述封装层的靠近所述连接层的膜层的折射率的差值大于0.25。
本公开实施例还提供一种显示装置，包括所述的显示基板。
在阅读并理解了附图和详细描述后，可以明白其他方面。
附图说明
附图用来提供对本公开技术方案的进一步理解，并且构成说明书的一部分，与本公开的实施例一起用于解释本公开的技术方案，并不构成对本公开技术方案的限制。附图中部件的形状和大小不反映真实比例，目的只是示意说明本公开内容。
图1为一些示例性实施例的显示基板的膜层结构示意图；
图2为在一些示例性实施例中图1的显示基板的剖面结构示意图；
图3为一些示例性实施例的显示基板的红色子像素、绿色子像素和蓝色子像素的发光元件发出的光依次经过光取出层、偏振转换层、二分之一相位延迟膜和偏光层的示意图；
图4为三个不同的偏振转换膜材的波长分散性曲线图；
图5a为外界环境光从偏光层入射到显示基板内并从具有正波长分散性的四分之一相位延迟膜出射后的出光效果图；
图5b为外界环境光从偏光层入射到显示基板内并从具有逆波长分散性的四分之一相位延迟膜出射后的出光效果图；
图6为一些示例性实施例的显示基板采用不同厚度的连接层时的透过率曲线图；
图7为一些示例性实施例的显示基板采用不同厚度的连接层时相关膜层对外界环境光的透过率曲线图。
附图标记：
101、基底，102、驱动电路层，103、发光结构层，210、驱动晶体管，211、存储电容；
301、阳极，302、空穴注入层，303、空穴传输层，3041、红色子像素的电子阻挡层，3042、绿色子像素的电子阻挡层，3043、蓝色子像素的电子阻挡层，3051、红色子像素的发光层，3052、绿色子像素的发光层，3053、蓝 色子像素的发光层，306、空穴阻挡层，307、电子传输层，308、电子注入层，309、阴极；
310、发光元件，510、像素定义层；
601、封装层，602、连接层，603、光取出层，604、偏振转换层，605、二分之一相位延迟膜，606、偏光层。
具体实施方式
本领域的普通技术人员应当理解，可以对本公开实施例的技术方案进行修改或者等同替换，而不脱离本公开实施例技术方案的精神和范围，均应涵盖在本公开的权利要求范围当中。
本公开实施例提供一种显示基板，如图1、图2和图3所示，图1为一些示例性实施例的显示基板的膜层结构示意图，图2为在一些示例性实施例中图1的显示基板的剖面结构示意图，图3为一些示例性实施例的显示基板的红色子像素、绿色子像素和蓝色子像素的发光元件发出的光依次经过光取出层、偏振转换层、二分之一相位延迟膜和偏光层的示意图。所述显示基板包括设于基底101上的发光元件310(图2示出)，以及依次叠设于所述发光元件310的出光侧的封装层601、连接层602、光取出层603、偏振转换层604和偏光层606；所述光取出层603设置为将入射到所述光取出层603的所述发光元件310发出的光的至少一部分转化为设定旋向的圆偏振光并透过；所述偏振转换层604设置为将透过所述光取出层603的圆偏振光转化为线偏振光，所述线偏振光的偏振方向与所述偏光层606的透光轴方向平行；所述连接层602设置为将所述光取出层603与所述封装层601粘接，所述连接层602的厚度大于3倍的所述光取出层603的厚度，所述连接层602的折射率与所述封装层601的靠近所述连接层602的膜层的折射率的差值大于0.25。
本公开实施例的显示基板，所述光取出层603设置为将入射到所述光取出层603的所述发光元件310发出的光的至少一部分转化为设定旋向的圆偏振光并透过，透过光取出层603的圆偏振光在经过偏振转换层604后可以转化为线偏振光，该线偏振光的偏振方向与偏光层606的透光轴方向平行，则所述线偏振光可以几乎无损耗地透过偏光层606，如此，相较于一些技术中 发光元件310发出的光不经过偏振化调制而从偏光层606射出的方案，可以减小光损失，提高显示基板的出光效率，从而提高显示基板的亮度，降低功耗。此外，通过将连接层602设置为连接层602的厚度大于3倍的所述光取出层603的厚度，连接层602的折射率与所述封装层601的靠近所述连接层602的膜层的折射率的差值大于0.25，这样有利于减少光通过连接层602时的损失，提高显示基板的出光效率，还可以减少外界环境光在入射到显示基板后产生的干涉条纹现象，从而有利于提高显示基板的抗反射效果。
在一些示例性实施例中，如图1所示，所述连接层602的折射率可以为1.35至1.65。所述连接层602的厚度可以为5μm至40μm，所述光取出层603的厚度可以为1μm至30μm。所述连接层602可以起到辅助光取出的作用，及粘接封装层601和光取出层603的作用。
在一些示例性实施例中，如图1和图2所示，所述显示基板可以包括多种设置为显示不同颜色的子像素，每个子像素包括一个发光元件。图1中示意了三种颜色的子像素，分别为红色子像素R、绿色子像素G和蓝色子像素B。以蓝色子像素B为例，所述发光元件310可以包括沿远离所述基底101的方向依次叠设的阳极301、发光层3053和阴极309。如图3所示，所述光取出层603还设置为将入射到所述光取出层603的所述发光元件310发出的光的另一部分转化为与所述设定旋向相反的圆偏振光并反射，所述光取出层603反射的与所述设定旋向相反的圆偏振光经过所述阴极309反射后转化为与所述设定旋向相同的圆偏振光，并能够透过所述光取出层603。这样，可通过阴极309的反射作用回收被所述光取出层603反射的圆偏振光，减少光损失，提高出光效率。在其他实施方式中，可以在所述阴极309的背离所述基底101一侧设置反射层，利用该反射层来反射被所述光取出层603反射的圆偏振光。
本实施例的一个示例中，如图1和图2所示，所述发光元件310可以为顶发射OLED器件。所述顶发射OLED器件的阳极301可以采用高反射率高功函数的金属层和透明金属氧化物层的复合膜层结构，如Ag/ITO(银/氧化铟锡)、Ag/IZO(银/氧化铟锌)或者ITO/Ag/ITO等，其中，金属层厚度可以为80nm至100nm，金属氧化物层的厚度可以为5nm至10nm。阳极301 在可见光区的平均反射率可以为85％至95％。阳极301可以通过磁控溅射、刻蚀等工艺形成。阴极309可以采用金属材料，比如镁、银或铝，或者合金材料(比如，镁银合金，镁与银的比例可以为3：7至1：9)制成；阴极309对530nm的光的透过率可以为50％至60％，形成半透明阴极；或者，阴极309可以采用透明氧化物ITO、IZO、IGZO(铟镓锌氧化物)等材料制备成透明阴极。阴极309可以通过真空沉积的方式形成，阴极309的厚度可以为10nm至20nm。所述发光层的材料可以包括主体材料和荧光客体材料。为提高OLED器件中电子和空穴的传输能力，以红色子像素R为例，所述阳极301和所述发光层3051之间还可以设置有依次叠设的空穴注入层302、空穴传输层303和电子阻挡层3041，所述发光层3051和所述阴极309之间还可以设置有依次叠设的空穴阻挡层306、电子传输层307和电子注入层308。所述阳极301和所述阴极309之间的所有膜层可以称为有机功能层。
本实施例的一个示例中，如图1和图2所示，所述光取出层603可以包括胆甾相液晶材料(或者可以称为手性向列型液晶)，具有被固化的手性方向(比如左旋向)。示例性地，所述光取出层603包括胆甾相液晶层，所述胆甾相液晶层可以是将含有光聚合特性的向列相液晶单体及手性剂的混合物(手性剂的掺杂比例可以小于20％，比如小于10％)，经过光固化形成的具有固定旋向的聚合物稳定型胆甾相液晶膜材，制备好的胆甾相液晶膜材通过连接层602粘贴于所述封装层601的背离基底101的表面。所述光取出层603可以不含有PET(聚对苯二甲酸乙二醇酯)、PMMA(聚甲基丙烯酸甲酯)等基材。
如图3所示，所述胆甾相液晶层(光取出层603)可以设置为将入射到所述胆甾相液晶层的设定波长范围(比如蓝光)的自然光的一部分(可以是50％的光)转化为与其手性方向相反(比如右旋向)的圆偏振光并透过，以及将所述设定波长范围的自然光的另一部分(可以是50％的光)转化为与其手性方向相同(比如左旋向)的圆偏振光并反射；所述胆甾相液晶层反射的与其手性方向相同(比如左旋向)的圆偏振光经过所述阴极309反射后旋向反转(比如左旋向反转为右旋向)，成为可以通过所述胆甾相液晶层的圆偏振光(比如右旋向)。如果按阴极309的反射率为50％计算，发光元件310 发出的光大约有75％以上的光可以通过所述胆甾相液晶层，且带有固定旋向(如右旋向)的圆偏振特性。通过光取出层603的圆偏振光在经过偏振转换层604后转化为线偏振光，该线偏振光的偏振方向与所述偏光层606的透光轴方向平行，则所述设定波长范围(比如蓝光)的自然光几乎可以无损耗地透过所述偏光层606。所述胆甾相液晶层还可以设置为对于入射到所述胆甾相液晶层的所述设定波长范围以外(比如红光和绿光)的自然光不产生偏振态变化，即所述设定波长范围以外的自然光在入射到所述胆甾相液晶层并透过后仍为自然光。
一些技术的显示基板中，红光OLED器件和绿光OLED器件的发光材料采用磷光材料，蓝光OLED器件由于寿命问题，发光材料采用荧光材料。由于磷光材料和荧光材料的发光机制的差异，导致荧光效率远远低于磷光效率，因此显示基板的蓝光出光效率远远低于红光和绿光的出光效率。一些技术通过优化蓝光发光材料的发光体系，以提升显示基板的蓝光出光效率，但是难以兼顾蓝光OLED器件的效率和寿命，无法达到量产需求。
本公开实施例中，所述光取出层603可以设置为将波长范围在400nm至500nm的光转化为所述设定旋向的圆偏振光并透过；所述光取出层603对波长范围在400nm至500nm的光的透过率为35％至65％(比如40％至55％)，且对波长大于500nm的光的透过率大于90％(比如大于95％)。这样，由于400nm至500nm为蓝光的波长范围，因此，如图3所示，所述光取出层603可以将蓝光OLED器件发出的波长范围在400nm至500nm的蓝光的一部分转化为所述设定旋向的圆偏振光并透过，另一部分转化为与所述设定旋向相反的圆偏振光并反射，如此，可以提高显示基板的蓝光出光效率。所述光取出层603对于红光OLED器件发出的红光和绿光OLED器件发出的绿光不产生偏振态变化，红光和绿光通过所述光取出层603后仍为自然光，且光取出层603对红光和绿光的透过率可以大于90％。
在一些示例性实施例中，如图1和图2所示，所述偏振转换层604可以为四分之一相位延迟膜，所述四分之一相位延迟膜可以具有逆波长分散性，即，随着入射光的波长的增大，四分之一相位延迟膜对入射光进行双折射后产生的o光(寻常光)与e光(非常光)的光程差增大，相应地，光程差比 值R/R 0增大，其中，R为四分之一相位延迟膜对入射光进行双折射后产生的o光与e光的光程差，R 0为所述四分之一相位延迟膜对入射的中心波长的光(比如580nm的绿光)进行双折射后产生的o光与e光的光程差。如图4所示，图4为三个不同的偏振转换膜材的波长分散性曲线图，其中，偏振转换膜材a和偏振转换膜材b的光程差比值R/R 0随着入射光的波长的增大而增大，具有逆波长分散性；偏振转换膜材c的光程差比值R/R 0随着入射光的波长的增大而减小，具有正波长分散性。
如果所述四分之一相位延迟膜具有正波长分散性，则，在外界环境光从偏光层入射到显示基板内并经过所述偏振转换层出射后，由于四分之一相位延迟膜的中心波长(比如580nm)为绿光，因此绿光的出光接近于圆偏振光，而红光和蓝光的出光均为椭圆偏振光，如图5a所示，图5a为外界环境光从偏光层入射到显示基板内并从具有正波长分散性的四分之一相位延迟膜出射后的出光效果图；这样，从所述偏振转换层出射的红光和蓝光的椭圆偏振光经过阴极反射后，然后在经过所述偏振转换层后仍为椭圆偏振光，椭圆偏振光在经过所述偏光层时会有部分光从偏光层射出，不能达到较好的抗反射效果。本实施例中，所述四分之一相位延迟膜具有逆波长分散性，这样，在外界环境光从偏光层入射到显示基板内并经过所述偏振转换层出射后，红光、蓝光和绿光的出光均接近于圆偏振光，如图5b所示，图5b为外界环境光从偏光层入射到显示基板内并从具有逆波长分散性的四分之一相位延迟膜出射后的出光效果图；从所述偏振转换层出射的圆偏振光经过阴极反射后，然后在经过所述偏振转换层后变成线偏振光，该线偏振光的偏振方向与所述偏光层的透光轴方向垂直，因此不能从偏光层射出，具有良好的抗反射作用。
本实施例的一个示例中，所述四分之一相位延迟膜可以满足：0.78＜R B/R 0＜1.1，0.9＜R G/R 0＜1.1，1＜R R/R 0＜1.1；
其中，R 0为所述四分之一相位延迟膜对入射的中心波长的光(比如580nm的绿光)进行双折射后产生的o光与e光的光程差；R B为所述四分之一相位延迟膜对入射的蓝光进行双折射后产生的o光与e光的光程差；R G为所述四分之一相位延迟膜对入射的绿光进行双折射后产生的o光与e光的光程差；R R为所述四分之一相位延迟膜对入射的红光进行双折射后产生的o光与e光 的光程差。
在一些示例性实施例中，如图1和图2所示，所述显示基板还可以包括设于所述偏振转换层604和所述偏光层606之间的二分之一相位延迟膜605，这样，在外界环境光从偏光层606入射到显示基板内，依次经过二分之一相位延迟膜605和具有逆波长分散性的四分之一相位延迟膜后，红光、蓝光和绿光的出光会更加接近于圆偏振光，之后圆偏振光经过阴极309反射后并最终经过偏光层606时被吸收，可增加抗反射效果。
示例性地，所述偏光层606、所述二分之一相位延迟膜605和所述偏振转换层(四分之一相位延迟膜)604满足：β-2α＝45°；其中，α为所述二分之一相位延迟膜605的光轴与所述偏光层606的透光轴的夹角，β为所述偏振转换层604的光轴与所述偏光层606的透光轴的夹角；或者，α为所述二分之一相位延迟膜605的光轴与所述偏光层606的吸收轴的夹角，β为所述偏振转换层604的光轴与所述偏光层606的吸收轴的夹角。这样，可以保证外界环境光依次通过所述偏光层606、所述二分之一相位延迟膜605和所述偏振转换层604后，能形成圆偏振光。
在一些示例性实施例中，所述四分之一相位延迟膜和二分之一相位延迟膜可以是液晶材料层或高分子膜层。所述液晶材料可以采用盘状液晶或胆甾相液晶等材料，可采用涂布方式制备成膜。
在一些示例性实施例中，如图1和图2所示，所述封装层601包括叠设的多个膜层，所述封装层601的折射率可以沿远离所述基底101的方向呈高低交替变化。这样，有利于发光元件310发出的光的耦合输出，提高显示基板的出光效率，还可以提高显示基板的正视角亮度；此外，还可以提高阴极309的反射特性，有助于回收被所述光取出层603反射的圆偏振光，从而提高显示基板的出光效率。
本实施例的一个示例中，所述封装层中任意相邻的两个膜层中，其中一个膜层的折射率为1.3至1.7，另一个膜层的折射率为1.7至2.3。
在一些示例性实施例中，所述发光元件包括沿远离所述基底的方向依次叠设的阳极、发光层和阴极；所述显示基板还包括设置在所述阴极和所述封装层(简称TFE)之间的覆盖层(简称CPL)；所述封装层可以包括沿远离 所述基底的方向依次叠设的第一无机封装层、有机封装层和第二无机封装层；所述第一无机封装层可以包括一个或多个膜层，当所述第一无机封装层包括一个膜层时，所述第一无机封装层的折射率高于所述有机封装层的折射率；当所述第一无机封装层包括多个膜层时，所述第一无机封装层中靠近所述有机封装层的膜层的折射率高于所述有机封装层的折射率。
本实施例的一个示例中，所述覆盖层的折射率与所述封装层的靠近所述覆盖层的膜层的折射率的差值可以大于0.1。
本实施例的一个示例中，所述第一无机封装层包括一个膜层，所述第一无机封装层的折射率可以高于所述覆盖层(所述覆盖层可以为一个膜层)的折射率；或者，所述覆盖层可以包括沿远离所述基底的方向依次叠设的第一子覆盖层和第二子覆盖层，所述第一子覆盖层的折射率高于所述第二子覆盖层的折射率，所述第二子覆盖层的折射率低于所述第一无机封装层的折射率。示例性地，所述覆盖层的材料为芳胺类或嗪类有机材料(示例性地，可通过调节形成第一子覆盖层和第二子覆盖层的有机材料的分子结构等差异来调节第一子覆盖层和第二子覆盖层的折射率)，所述第一无机封装层的材料为氮化硅或氮氧化硅，所述有机封装层的材料为树脂材料，所述第二无机封装层的材料为氮化硅或氮氧化硅。示例性地，所述覆盖层为一个膜层时，所述覆盖层的折射率可以为1.3至1.7，或者，所述覆盖层包括所述第一子覆盖层和所述第二子覆盖层，所述第一子覆盖层的折射率可以为1.7至2.3，所述第二子覆盖层的折射率可以为1.3至1.7；所述第一无机封装层的折射率可以为1.7至2.3，所述有机封装层的折射率可以为1.3至1.7，所述第二无机封装层的折射率可以为1.7至2.3。本示例中，覆盖层与所述封装层组合形成的复合结构层的折射率沿远离所述基底的方向呈高低交替变化。
本实施例的一个示例中，所述第一无机封装层可以包括沿远离所述基底的方向依次叠设的第一子无机封装层和第二子无机封装层，所述第一子无机封装层的折射率可以低于所述第二子无机封装层的折射率；所述覆盖层的折射率高于所述第一子无机封装层的折射率。示例性地，所述第一子无机封装层的材料可以为氟化锂或者二氧化硅，所述第二子无机封装层的材料可以为氮化硅或氮氧化硅，所述有机封装层的材料为树脂材料，所述第二无机封装 层的材料为氮化硅或氮氧化硅；所述覆盖层的材料可以为芳胺类或嗪类有机材料。其中，所述覆盖层的厚度为50nm至150nm，所述第一子无机封装层的厚度为40nm至100nm，所述第二子无机封装层的厚度为500nm至2000nm，所述有机封装层的厚度为5000nm至20000nm，所述第二无机封装层的厚度为400nm至1000nm。比如，所述覆盖层的厚度为80nm至100nm，所述第一子无机封装层的厚度为50nm至70nm，所述第二子无机封装层的厚度为800nm至1200nm，所述有机封装层的厚度为8000nm至12000nm，所述第二无机封装层的厚度为500nm至700nm。所述覆盖层与所述封装层组合形成的复合结构层对可见光的总透过率可以不低于90％。或者，所述第一子无机封装层和所述第二子无机封装层的材料可以均为氮氧化硅，可以通过调节形成第一子无机封装层和第二子无机封装层的氮氧化硅中氮与氧的比例来调节第一子无机封装层和第二子无机封装层的折射率。示例性地，所述覆盖层的折射率可以为1.7至2.3，所述第一子无机封装层的折射率可以为1.3至1.7，所述第二子无机封装层的折射率可以为1.7至2.3，所述有机封装层的折射率可以为1.3至1.7，所述第二无机封装层的折射率可以为1.7至2.3。本示例中，覆盖层与所述封装层组合形成的复合结构层的折射率沿远离所述基底的方向呈高低交替变化。
在一些示例性实施例中，如图1和图2所示，所述封装层601可以包括叠设的三个或三个以上的膜层，所述封装层601中至少一个膜层的折射率与所述连接层602的折射率的差值小于等于0.2，所述封装层601中至少两个膜层的折射率大于1.65。
下面比较了不同厚度的连接层对显示基板光线透过率及抗反射效果的影响。
实施例1：OLED发光元件/封装层/连接层1(10μm)/光取出层(5μm)/偏振转换层/偏光层
实施例2：OLED发光元件/封装层/连接层2(25μm)/光取出层(5μm)/偏振转换层/偏光层
膜层结构1：偏光层/偏振转换层/光取出层/连接层1(厚度为光取出层的2倍)
膜层结构2：偏光层/偏振转换层/光取出层/连接层2(厚度为光取出层的5倍)
如图6所示，图6为实施例1和实施例2的显示基板的透过率曲线图，曲线A1为实施例1的显示基板的透过率曲线图，曲线A2为实施例2的显示基板的透过率曲线图。可以看出，实施例2的显示基板的透过率比实施例1的显示基板的透过率有显著提高，此外，在420nm至500nm的蓝光波长范围内，实施例2的显示基板的透过率相较于实施例1的显示基板的透过率的增幅更高，更有利于提高蓝光的出光效率。
如图7所示，图7为上述膜层结构1和膜层结构2对外界环境光的透过率曲线图，曲线A1为膜层结构1对外界环境光的透过率曲线图，曲线A2为膜层结构2对外界环境光的透过率曲线图，可以看出，当外界环境光入射时，膜层结构1出现了明显的干涉条纹，膜层结构2未出现明显的干涉条纹，因此，膜层结构2相比膜层结构1具有更好的抗反射效果。
在一些示例性实施例中，如图1和图2所示，所述显示基板包括显示区域，所述显示区域包括阵列排布的多个像素单元，所述像素单元包括红色子像素R、绿色子像素G和蓝色子像素B，每个子像素包括一个发光元件310；所述显示区域内所有子像素的以下任意一个膜层连接为一体结构且覆盖所述显示区域：所述封装层601、所述连接层602、所述光取出层603、所述偏振转换层604和所述偏光层606。
在一些示例性实施例中，如图1和图2所示，所述显示基板包括依次叠设于基底101上的驱动电路层102、发光结构层103、封装层601、连接层602、光取出层603、偏振转换层604、二分之一相位延迟膜605和偏光层606。所述驱动电路层102包括多个像素驱动电路，所述发光结构层103包括多个发光元件310，每个发光元件310与对应的一个像素驱动电路连接。所述显示基板可以包括阵列排布的多个像素单元，每个像素单元可以包括多种颜色的子像素，相同颜色的多个子像素可称为同种子像素，每个子像素包括一个发光元件310。示例性地，发光元件310为顶发射OLED器件，每个像素单元包括三种颜色的子像素，比如红色子像素R、绿色子像素G和蓝色子像素B，每种颜色子像素的发光元件310发该种子像素显示颜色的光，比如红色子像 素R的发光元件(可称为红光发光元件)310发红色光。
在一些示例性实施方式中，所述基底101可以为玻璃、透明聚酰亚胺，或其他硬质或柔性基材，折射率可以为1.3至1.5。
在一些示例性实施方式中，如图2所示，所述驱动电路层102可以包括构成像素驱动电路的多个晶体管和存储电容，图2中以每个像素驱动电路包括一个驱动晶体管210和一个存储电容211为例进行示意。在一些实施方式中，所述驱动电路层102可以包括：设置在基底101上的第一绝缘层；设置在第一绝缘层上的有源层；覆盖有源层的第二绝缘层；设置在第二绝缘层上的栅电极和第一电容电极；覆盖栅电极和第一电容电极的第三绝缘层；设置在第三绝缘层上的第二电容电极；覆盖第二电容电极的第四绝缘层，第二绝缘层、第三绝缘层和第四绝缘层上开设有过孔，过孔暴露出有源层；设置在第四绝缘层上的源电极和漏电极，源电极和漏电极分别通过相应的过孔与有源层连接；覆盖前述结构的平坦层，平坦层上开设有过孔，过孔暴露出漏电极。有源层、栅电极、源电极和漏电极组成驱动晶体管210，第一电容电极和第二电容电极组成存储电容211。
在一些示例性实施方式中，如图1和图2所示，发光结构层103可以包括阳极301、像素定义层510、阴极309，以及位于阳极301和阴极309之间的有机功能层，有机功能层至少包括发光层(图1和图2的示例中红色子像素R的发光层为3051、绿色子像素G的发光层为3052、蓝色子像素B的发光层为3053)，有机功能层还可以包括所述空穴注入层302、空穴传输层303、电子阻挡层(图1和图2的示例中红色子像素R的电子阻挡层为3041、绿色子像素G的电子阻挡层为3042、蓝色子像素B的电子阻挡层为3043)、空穴阻挡层306、电子传输层307和电子注入层308。阳极301设置在驱动电路层102的平坦层上，通过平坦层上开设的过孔与驱动晶体管210的漏电极连接。像素定义层510设置在阳极301的背离基底101的一侧，像素定义层510设有像素开口，像素定义层510将阳极301表面的靠近周向边缘的部分覆盖，像素开口将阳极301表面的其余部分暴露出，阳极301表面被像素开口暴露出的部分依次叠设有机功能层的多个膜层及阴极309。每个子像素的阳极301、有机功能层和阴极303形成OLED器件(发光元件)，配置为在相应的像素 驱动电路的驱动下出射相应颜色的光线。发光结构层103还可以包括其它膜层，比如设置在像素定义层510上的隔垫柱等。
在一些示例性实施方式中，如图1和图2所示，可以采用如下制备方法制备包括OLED器件的显示基板。首先，通过图案化工艺在基底上形成驱动电路层102，驱动电路层102可以包括构成像素驱动电路的驱动晶体管210和存储电容211。随后，在形成前述结构的基底上形成平坦层，平坦层上形成有暴露出驱动晶体管210的漏电极的过孔。随后，在形成前述结构的基底上，通过图案化工艺形成多个阳极301，每个子像素的阳极301通过平坦层上的过孔与对应的像素驱动电路的驱动晶体管210的漏电极连接。随后，在形成前述结构的基底上，通过图案化工艺形成像素定义层510，每个子像素的像素定义层510上形成有暴露出阳极301的像素开口，每个像素开口作为每个子像素的发光区域。随后，在形成前述结构的基底上，先采用开放式掩膜版依次蒸镀空穴注入层302和空穴传输层303，空穴注入层302和空穴传输层303为共通层，即所有子像素的空穴注入层302是一体连通的，所有子像素的空穴传输层303是一体连通的。空穴注入层302和空穴传输层303的面积大致是相同的，厚度不同。随后，采用精细金属掩模版在红色子像素R、绿色子像素G和蓝色子像素B内分别蒸镀红色子像素R的电子阻挡层3041和发光层3051、绿色子像素G的电子阻挡层3042和发光层3052、以及蓝色子像素B的电子阻挡层3043和发光层3053，相邻子像素的电子阻挡层和发光层是可以有少量的交叠或者可以是隔离的。随后，采用开放式掩膜版依次蒸镀空穴阻挡层306、电子传输层307、电子注入层308和阴极309，空穴阻挡层306、电子传输层307、电子注入层308和阴极309均为共通层，即所有子像素的空穴阻挡层306是一体连通的，所有子像素的电子传输层307是一体连通的，所有子像素电子注入层308的是一体连通的，所有子像素的阴极309是一体连通的。之后，在阴极309的背离基底101的一侧依次形成封装层601、连接层602、光取出层603、偏振转换层604、二分之一相位延迟膜605和偏光层606。
在一些示例性实施方式中，蒸镀发光层可以采用多源共蒸镀方式，形成包含主体材料和掺杂材料的发光层，掺杂材料可以为荧光发光材料。可以在 蒸镀过程中通过控制掺杂材料的蒸镀速率来调控掺杂材料的掺杂浓度，或者通过控制主体材料和掺杂材料的蒸镀速率比来调控掺杂材料的掺杂浓度。
在一些示例性实施方式中，所述空穴注入层可以采用HATCN(2,3,6,7,10,11-六氰基-1,4,5,8,9,12-六氮杂苯并菲)、CuPc(酞菁铜)中的至少一种制备。空穴注入层也可以是采用空穴传输材料(主体材料)和p型掺杂材料的混合材料制备而成，其中，p型掺杂材料的掺杂浓度为0.5％～10％，比如，空穴注入层的材料可以是：F 4TCNQ(2,3,5,6-四氟-7,7',8,8'-四氰二甲基对苯醌)掺杂在NPB(N,N′-二(1-萘基)-N,N′-二苯基-1,1′-联苯-4-4′-二胺)里形成的材料，即NPB:F 4TCNQ，或者，MoO 3(三氧化钼)掺杂在TAPC(4,4'-环己基二[N,N-二(4-甲基苯基)苯胺])里形成的材料，即TAPC:MoO 3。空穴注入层的厚度可以是5nm至20nm。空穴注入层可以降低空穴从阳极的注入势垒，提高空穴注入效率。
示例性地，所述空穴传输层的材料可以为空穴迁移率较高的咔唑类等材料。所述空穴传输层的最高占据分子轨道(HOMO)能级可以在-5.2eV至-5.6eV之间。所述空穴传输层的厚度可以为100nm至200nm。空穴传输层的作用是提高空穴传输速率，还可以降低空穴注入势垒，提高空穴注入效率。
示例性地，所述电子阻挡层的主要作用是传递空穴，并阻挡电子以及发光层内产生的激子。电子阻挡层的材料可以为咔唑类等材料。每种颜色子像素的电子阻挡层可单独采用蒸镀工艺制备，蓝色子像素的电子阻挡层的厚度可以为1nm至10nm。红色子像素的电子阻挡层的厚度可以为40nm至60nm。绿色子像素的电子阻挡层的厚度可以为15nm至30nm。
示例性地，所述发光层可以包括负责电荷传输的主体材料和负责发光的客体材料，发光层的发光颜色及光谱特性主要由客体材料决定。或者，发光层材料可以为延迟荧光材料体系，发光层材料还可以包括具有延迟荧光特性的敏化剂。每种颜色子像素的发光层可单独采用蒸镀工艺制备。蓝色子像素的发光层的厚度可以为15nm至25nm。红色子像素的发光层的厚度可以为25nm至40nm。绿色子像素的发光层的厚度可以为25nm至40nm。
示例性地，所述空穴阻挡层的材料可以为吖嗪、咪唑等衍生物。空穴阻挡层的主要作用是传递电子，并阻挡空穴以及发光层内产生的激子向阴极所 在侧迁移。所述空穴阻挡层的厚度可以为2nm至10nm。
示例性地，所述电子传输层可以为噻吩类、咪唑类或吖嗪类等衍生物与喹啉锂共混的方式制备而成，喹啉锂的比例可以为30％至70％。所述电子传输层的厚度可以为20nm至40nm。
示例性地，所述电子注入层的材料可以是8-羟基喹啉锂(Liq)、氟化锂(LiF)、锂(Li)、镱(Yb)、镁(Mg)或钙(Ca)等材料。电子注入层的厚度可以是0.5nm至2nm。电子注入层可以降低电子注入势垒，提高电子注入效率。
本公开实施例还提供一种显示装置，包括前文任一实施例所述的显示基板。显示装置可以为：手机、平板电脑、电视机、显示器、笔记本电脑、数码相框、导航仪等任何具有显示功能的产品或部件。
附图中，有时为了明确起见，夸大表示了构成要素的大小、层的厚度或区域。因此，本公开的实施方式并不一定限定于该尺寸，附图中每个部件的形状和大小不反映真实比例。此外，附图示意性地示出了一些例子，本公开的实施方式不局限于附图所示的形状或数值。
在本文描述中，“平行”是指两条直线形成的角度为-10°以上且10°以下的状态，因此，包括该角度为-5°以上且5°以下的状态。另外，“垂直”是指两条直线形成的角度为80°以上且100°以下的状态，因此，包括85°以上且95°以下的角度的状态。
在本文描述中，术语“上”、“下”、“左”、“右”、“顶”、“内”、“外”、“轴向”、“四角”等指示的方位或位置关系为基于附图所示的方位或位置关系，仅是为了便于描述本公开实施例的简化描述，而不是指示或暗示所指的结构具有特定的方位、以特定的方位构造和操作，因此不能理解为对本公开的限制。
在本文描述中，除非另有明确的规定和限定，术语“连接”、“固定连接”、“安装”、“装配”应做广义理解，例如，可以是固定连接，或是可拆卸连接，或一体地连接；术语“安装”、“连接”、“固定连接”可以是直接相连，或通过中间媒介间接相连，或是两个元件内部的连通。对于本领 域的普通技术人员而言，可以根据情况理解上述术语在本公开实施例中的含义。

Claims (20)

  1. 一种显示基板，包括设于基底上的发光元件，以及依次叠设于所述发光元件的出光侧的封装层、连接层、光取出层、偏振转换层和偏光层；
    所述光取出层设置为将入射到所述光取出层的所述发光元件发出的光的至少一部分转化为设定旋向的圆偏振光并透过；
    所述偏振转换层设置为将透过所述光取出层的圆偏振光转化为线偏振光，所述线偏振光的偏振方向与所述偏光层的透光轴方向平行；
    所述连接层设置为将所述光取出层与所述封装层粘接，所述连接层的厚度大于3倍的所述光取出层的厚度，所述连接层的折射率与所述封装层的靠近所述连接层的膜层的折射率的差值大于0.25。
  2. 如权利要求1所述的显示基板，其中，所述连接层的折射率为1.35至1.65，所述连接层的厚度为5μm至40μm。
  3. 如权利要求1所述的显示基板，其中，所述发光元件包括沿远离所述基底的方向依次叠设的阳极、发光层和阴极；
    所述光取出层还设置为将入射到所述光取出层的所述发光元件发出的光的另一部分转化为与所述设定旋向相反的圆偏振光并反射，所述光取出层反射的与所述设定旋向相反的圆偏振光经过所述阴极反射后转化为与所述设定旋向相同的圆偏振光，并能够透过所述光取出层。
  4. 如权利要求1至3任一项所述的显示基板，其中，所述光取出层包括胆甾相液晶材料。
  5. 如权利要求1所述的显示基板，其中，所述光取出层设置为将波长范围在400nm至500nm的光转化为所述设定旋向的圆偏振光并透过；
    所述光取出层对波长范围在400nm至500nm的光的透过率为35％至65％，且对波长大于500nm的光的透过率大于90％。
  6. 如权利要求1所述的显示基板，其中，所述偏振转换层为四分之一相位延迟膜，所述四分之一相位延迟膜具有逆波长分散性。
  7. 如权利要求6所述的显示基板，其中，所述四分之一相位延迟膜满足： 0.78＜R B/R 0＜1.1，0.9＜R G/R 0＜1.1，1＜R R/R 0＜1.1；
    其中，R 0为所述四分之一相位延迟膜对入射的中心波长的光进行双折射后产生的o光与e光的光程差；R B为所述四分之一相位延迟膜对入射的蓝光进行双折射后产生的o光与e光的光程差；R G为所述四分之一相位延迟膜对入射的绿光进行双折射后产生的o光与e光的光程差；R R为所述四分之一相位延迟膜对入射的红光进行双折射后产生的o光与e光的光程差。
  8. 如权利要求6所述的显示基板，还包括设于所述偏振转换层和所述偏光层之间的二分之一相位延迟膜。
  9. 如权利要求8所述的显示基板，其中，所述偏光层、所述二分之一相位延迟膜和所述偏振转换层满足：β-2α＝45°；
    其中，α为所述二分之一相位延迟膜的光轴与所述偏光层的透光轴的夹角，β为所述偏振转换层的光轴与所述偏光层的透光轴的夹角；或者，α为所述二分之一相位延迟膜的光轴与所述偏光层的吸收轴的夹角，β为所述偏振转换层的光轴与所述偏光层的吸收轴的夹角。
  10. 如权利要求1所述的显示基板，其中，所述封装层包括叠设的三个以上的膜层，所述封装层中至少一个膜层的折射率与所述连接层的折射率的差值小于等于0.2，所述封装层中至少两个膜层的折射率大于1.65。
  11. 如权利要求1所述的显示基板，其中，所述发光元件包括沿远离所述基底的方向依次叠设的阳极、发光层和阴极；
    所述显示基板还包括设于所述阴极和所述封装层之间的覆盖层，所述覆盖层的折射率与所述封装层的靠近所述覆盖层的膜层的折射率的差值大于0.1。
  12. 如权利要求1所述的显示基板，包括显示区域，所述显示区域包括阵列排布的多个像素单元，所述像素单元包括红色子像素、绿色子像素和蓝色子像素，每个子像素包括一个发光元件；
    所述显示区域内所有子像素的以下任意一个膜层连接为一体结构且覆盖所述显示区域：所述封装层、所述连接层、所述光取出层、所述偏振转换层和所述偏光层。
  13. 如权利要求1所述的显示基板，其中，所述封装层包括叠设的多个膜层，所述封装层的折射率沿远离所述基底的方向呈高低交替变化。
  14. 如权利要求13所述的显示基板，其中，所述发光元件包括沿远离所述基底的方向依次叠设的阳极、发光层和阴极；
    所述显示基板还包括设置在所述阴极和所述封装层之间的覆盖层；
    所述封装层包括沿远离所述基底的方向依次叠设的第一无机封装层、有机封装层和第二无机封装层；
    所述第一无机封装层包括一个或多个膜层，当所述第一无机封装层包括一个膜层时，所述第一无机封装层的折射率高于所述有机封装层的折射率；当所述第一无机封装层包括多个膜层时，所述第一无机封装层中靠近所述有机封装层的膜层的折射率高于所述有机封装层的折射率。
  15. 如权利要求14所述的显示基板，其中，所述第一无机封装层包括一个膜层；
    所述第一无机封装层的折射率高于所述覆盖层的折射率；或者，所述覆盖层包括沿远离所述基底的方向依次叠设的第一子覆盖层和第二子覆盖层，所述第一子覆盖层的折射率高于所述第二子覆盖层的折射率，所述第二子覆盖层的折射率低于所述第一无机封装层的折射率。
  16. 如权利要求15所述的显示基板，其中，所述覆盖层的材料为芳胺类或嗪类有机材料，所述第一无机封装层的材料为氮化硅或氮氧化硅，所述有机封装层的材料为树脂材料，所述第二无机封装层的材料为氮化硅或氮氧化硅。
  17. 如权利要求14所述的显示基板，其中，所述第一无机封装层包括沿远离所述基底的方向依次叠设的第一子无机封装层和第二子无机封装层，所述第一子无机封装层的折射率低于所述第二子无机封装层的折射率；
    所述覆盖层的折射率高于所述第一子无机封装层的折射率。
  18. 如权利要求17所述的显示基板，其中，所述第一子无机封装层的材料为氟化锂或者二氧化硅，所述第二子无机封装层的材料为氮化硅或氮氧化硅，所述有机封装层的材料为树脂材料，所述第二无机封装层的材料为氮化 硅或氮氧化硅；所述覆盖层的材料为芳胺类或嗪类有机材料。
  19. 如权利要求13至18任一项所述的显示基板，其中，所述封装层中任意相邻的两个膜层中，其中一个膜层的折射率为1.3至1.7，另一个膜层的折射率为1.7至2.3。
  20. 一种显示装置，包括权利要求1至19任一项所述的显示基板。
PCT/CN2021/115470 2021-08-30 2021-08-30 显示基板及显示装置 Ceased WO2023028787A1 (zh)

Priority Applications (4)

Application Number Priority Date Filing Date Title
EP21955366.6A EP4280256B1 (en) 2021-08-30 2021-08-30 Display substrate and display device
PCT/CN2021/115470 WO2023028787A1 (zh) 2021-08-30 2021-08-30 显示基板及显示装置
CN202180002359.0A CN116097928B (zh) 2021-08-30 2021-08-30 显示基板及显示装置
US17/794,626 US12543486B2 (en) 2021-08-30 2021-08-30 Display substrate and display device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/CN2021/115470 WO2023028787A1 (zh) 2021-08-30 2021-08-30 显示基板及显示装置

Publications (1)

Publication Number Publication Date
WO2023028787A1 true WO2023028787A1 (zh) 2023-03-09

Family

ID=85411807

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/CN2021/115470 Ceased WO2023028787A1 (zh) 2021-08-30 2021-08-30 显示基板及显示装置

Country Status (4)

Country Link
US (1) US12543486B2 (zh)
EP (1) EP4280256B1 (zh)
CN (1) CN116097928B (zh)
WO (1) WO2023028787A1 (zh)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2024221188A1 (zh) * 2023-04-24 2024-10-31 京东方科技集团股份有限公司 发光基板及其制备方法、显示装置
WO2025166764A1 (zh) * 2024-02-08 2025-08-14 京东方科技集团股份有限公司 发光基板及其制备方法、显示基板及显示装置

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20240188392A1 (en) * 2021-09-30 2024-06-06 Chengdu Boe Optoelectronics Technology Co., Ltd. Display Substrate, Display Apparatus, and Method for Preparing Display Substrate
CN115084411A (zh) * 2022-06-24 2022-09-20 京东方科技集团股份有限公司 一种显示面板、显示装置及显示面板的制作方法
WO2024239137A1 (zh) * 2023-05-19 2024-11-28 京东方科技集团股份有限公司 显示面板及显示装置
KR20250078718A (ko) * 2023-11-24 2025-06-04 삼성디스플레이 주식회사 표시 패널 및 이의 제조 방법
CN119630183A (zh) * 2024-11-28 2025-03-14 京东方科技集团股份有限公司 顶发射oled显示面板和制备方法
CN121368321B (zh) * 2025-12-22 2026-02-13 惠科股份有限公司 显示面板的制备方法及显示面板

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5596246A (en) * 1992-12-23 1997-01-21 Northrop Grumman Corporation High contrast TFEL display in which light from the transparent phosphor layer is reflected by an electrode layer and the TFEL diffuse reflectance <about 2%
CN1591101A (zh) * 2003-08-13 2005-03-09 株式会社日立显示器 发光型显示装置
CN101852883A (zh) * 2009-03-30 2010-10-06 爱普生拓优科梦株式会社 叠层1/2波长板、光拾取装置、偏振光变换元件及投影型显示装置
WO2011030879A1 (en) * 2009-09-10 2011-03-17 Fujifilm Corporation Organic electroluminescence element and display device
CN113036061A (zh) * 2021-03-25 2021-06-25 京东方科技集团股份有限公司 显示面板和显示装置

Family Cites Families (25)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7169447B2 (en) * 2002-05-17 2007-01-30 Merck Patent Gmbh Achromatic quarter wave film
JP4027164B2 (ja) * 2002-06-21 2007-12-26 株式会社日立製作所 表示装置
JPWO2007063629A1 (ja) * 2005-12-02 2009-05-07 シャープ株式会社 液晶表示装置
KR20100082557A (ko) * 2009-01-09 2010-07-19 삼성모바일디스플레이주식회사 유기 발광 표시 장치
TWI599082B (zh) * 2012-10-09 2017-09-11 財團法人工業技術研究院 增亮型自發光型顯示器
US9773847B2 (en) * 2013-06-06 2017-09-26 3M Innovative Properties Company Antireflective OLED construction
KR102289984B1 (ko) * 2014-08-04 2021-08-17 삼성디스플레이 주식회사 광학 필름 및 이를 포함하는 표시장치
CN104319282B (zh) * 2014-09-23 2018-02-27 京东方科技集团股份有限公司 发光二极管显示面板
KR20160079687A (ko) * 2014-12-26 2016-07-06 삼성전자주식회사 반사방지필름 및 이를 구비한 유기발광장치
KR102407115B1 (ko) * 2015-06-25 2022-06-09 삼성디스플레이 주식회사 유기 발광 표시 장치
KR101700772B1 (ko) 2015-10-30 2017-01-31 엘지디스플레이 주식회사 유기전계발광 표시장치
US20170294628A1 (en) * 2016-04-07 2017-10-12 Samsung Display Co., Ltd. Organic Light Emitting Diode and Light Emitting Diode Display
KR102646213B1 (ko) * 2016-06-30 2024-03-08 엘지디스플레이 주식회사 휘도 향상을 위한 광학부재 및 이를 구비한 유기전계발광 표시장치
CN106098962A (zh) * 2016-07-08 2016-11-09 京东方科技集团股份有限公司 偏振光学组件、oled器件及制备方法、显示装置
US10802343B2 (en) 2018-03-12 2020-10-13 Sharp Kabushiki Kaisha Low reflectivity LCD with COP retarder and COP matching RM
KR102510787B1 (ko) * 2018-05-31 2023-03-15 엘지디스플레이 주식회사 유기발광 표시장치
TWI663437B (zh) * 2018-06-08 2019-06-21 鼎茂光電股份有限公司 顯示裝置
KR102673859B1 (ko) * 2018-12-06 2024-06-11 삼성디스플레이 주식회사 표시장치 및 이를 포함하는 전자장치
CN109755414A (zh) * 2019-01-23 2019-05-14 京东方科技集团股份有限公司 Oled显示面板、oled显示装置
CN110426859B (zh) * 2019-07-31 2022-09-09 京东方科技集团股份有限公司 一种光学膜片、显示组件以及显示装置
CN112542494A (zh) 2019-12-02 2021-03-23 创王光电股份有限公司 显示面板
CN110927857A (zh) 2019-12-14 2020-03-27 浙江怡诚光电科技有限公司 用于oled显示器的具有增亮功能的圆偏光板及其应用
CN111354771B (zh) * 2020-03-10 2022-12-27 京东方科技集团股份有限公司 显示基板及显示装置
CN111710798A (zh) 2020-06-23 2020-09-25 京东方科技集团股份有限公司 有机发光二极管器件、其制备方法及阵列基板
US12069891B2 (en) * 2020-11-24 2024-08-20 Chengdu Boe Optoelectronics Technology Co., Ltd. Display substrate and manufacturing method thereof, and display apparatus

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5596246A (en) * 1992-12-23 1997-01-21 Northrop Grumman Corporation High contrast TFEL display in which light from the transparent phosphor layer is reflected by an electrode layer and the TFEL diffuse reflectance <about 2%
CN1591101A (zh) * 2003-08-13 2005-03-09 株式会社日立显示器 发光型显示装置
CN101852883A (zh) * 2009-03-30 2010-10-06 爱普生拓优科梦株式会社 叠层1/2波长板、光拾取装置、偏振光变换元件及投影型显示装置
WO2011030879A1 (en) * 2009-09-10 2011-03-17 Fujifilm Corporation Organic electroluminescence element and display device
CN113036061A (zh) * 2021-03-25 2021-06-25 京东方科技集团股份有限公司 显示面板和显示装置

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
See also references of EP4280256A4 *

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2024221188A1 (zh) * 2023-04-24 2024-10-31 京东方科技集团股份有限公司 发光基板及其制备方法、显示装置
WO2025166764A1 (zh) * 2024-02-08 2025-08-14 京东方科技集团股份有限公司 发光基板及其制备方法、显示基板及显示装置

Also Published As

Publication number Publication date
US20240206303A1 (en) 2024-06-20
US12543486B2 (en) 2026-02-03
EP4280256B1 (en) 2025-04-02
CN116097928A (zh) 2023-05-09
CN116097928B (zh) 2026-03-24
EP4280256A1 (en) 2023-11-22
EP4280256A4 (en) 2024-05-22

Similar Documents

Publication Publication Date Title
CN116097928B (zh) 显示基板及显示装置
US8841836B2 (en) Flat panel display device, organic light emitting display device and method of manufacturing flat panel display device
US7732809B2 (en) Light emitting display providing with compensated cholesteric reflective polarizer for improved contrast even in high ambient light or large viewing angle
CN103207426B (zh) 一种偏光片及显示装置
TWI468793B (zh) 有機發光顯示裝置
KR100852115B1 (ko) 유기 발광 디스플레이 장치
KR101094290B1 (ko) 유기 발광 표시 장치
US8148894B2 (en) Organic light emitting diode display
US7495385B2 (en) Flat panel display
CN102842271A (zh) 有机发光显示装置
WO2021170006A1 (zh) 显示面板及其制备方法、显示装置
US11251407B2 (en) Display panel having an optical coupling layer and manufacturing method thereof electroluminescent device and display device
CN116210364A (zh) 显示基板、显示装置及显示基板的制备方法
CN115497392A (zh) 一种显示装置
KR102458598B1 (ko) 유기발광다이오드 표시장치
US12593603B2 (en) Display substrate and display device
KR102450191B1 (ko) 유기발광표시장치
CN112909201B (zh) 显示面板及其制备方法、显示装置
KR20040042249A (ko) 액정 표시부를 구비한 유기 전계 발광 표시장치
KR102933161B1 (ko) 광흡수 필름 및 이를 포함하는 유기 발광 디스플레이 장치
WO2024239137A1 (zh) 显示面板及显示装置
WO2024197845A1 (zh) 显示面板和显示装置
KR20170079633A (ko) 양면 발광형 유기발광다이오드 표시장치
WO2024221188A1 (zh) 发光基板及其制备方法、显示装置
KR20210076625A (ko) 태양전지를 구비하는 유기발광다이오드 디스플레이

Legal Events

Date Code Title Description
WWE Wipo information: entry into national phase

Ref document number: 17794626

Country of ref document: US

ENP Entry into the national phase

Ref document number: 2021955366

Country of ref document: EP

Effective date: 20230816

NENP Non-entry into the national phase

Ref country code: DE

WWG Wipo information: grant in national office

Ref document number: 2021955366

Country of ref document: EP

WWG Wipo information: grant in national office

Ref document number: 17794626

Country of ref document: US