WO2023036121A1 - 一种电池背钝化结构及其制作方法、太阳能电池 - Google Patents

一种电池背钝化结构及其制作方法、太阳能电池 Download PDF

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WO2023036121A1
WO2023036121A1 PCT/CN2022/117237 CN2022117237W WO2023036121A1 WO 2023036121 A1 WO2023036121 A1 WO 2023036121A1 CN 2022117237 W CN2022117237 W CN 2022117237W WO 2023036121 A1 WO2023036121 A1 WO 2023036121A1
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layer
doped
passivation
internal reflection
manufacturing
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French (fr)
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李红博
何胜
徐伟智
单伟
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Chint New Energy Technology Co Ltd
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Chint New Energy Technology Co Ltd
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H10F71/129—Passivating
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F10/00—Individual photovoltaic cells, e.g. solar cells
    • H10F10/10—Individual photovoltaic cells, e.g. solar cells having potential barriers
    • H10F10/14—Photovoltaic cells having only PN homojunction potential barriers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F19/00—Integrated devices, or assemblies of multiple devices, comprising at least one photovoltaic cell covered by group H10F10/00, e.g. photovoltaic modules
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H10F71/121—The active layers comprising only Group IV materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/12—Active materials
    • H10F77/122—Active materials comprising only Group IV materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/30—Coatings
    • H10F77/306—Coatings for devices having potential barriers
    • H10F77/311—Coatings for devices having potential barriers for photovoltaic cells
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/30—Coatings
    • H10F77/306—Coatings for devices having potential barriers
    • H10F77/311—Coatings for devices having potential barriers for photovoltaic cells
    • H10F77/315—Coatings for devices having potential barriers for photovoltaic cells the coatings being antireflective or having enhancing optical properties
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/40—Optical elements or arrangements
    • H10F77/42—Optical elements or arrangements directly associated or integrated with photovoltaic cells, e.g. light-reflecting means or light-concentrating means
    • H10F77/48—Back surface reflectors [BSR]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/90—Energy storage means directly associated or integrated with photovoltaic cells, e.g. capacitors integrated with photovoltaic cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Definitions

  • the present application relates to the field of photovoltaic technology, in particular to a back passivation structure of a battery, a manufacturing method thereof, and a solar battery.
  • a solar cell is a device that converts solar energy into electricity.
  • back passivation technology came into being.
  • the back passivation structure of solar cells is to deposit an aluminum oxide film or a silicon oxynitride film on the back of a silicon wafer. Thick, resulting in long preparation time, low preparation efficiency, but also increase around plating / back field boat printing and other defects.
  • the purpose of this application is to provide a battery back passivation structure and its manufacturing method, and a solar cell, so as to improve the passivation ability of the battery back passivation structure, shorten the preparation process time and improve the battery yield.
  • the present application provides a method for manufacturing a battery back passivation structure, including:
  • a second reaction gas is fed into the coating device, and an internal reflection layer is directly or indirectly deposited on the surface of the doped passivation layer away from the silicon wafer.
  • a doped passivation layer on the back side of the silicon wafer it also includes:
  • indirectly depositing an internal reflection layer on the surface of the doped passivation layer away from the silicon wafer includes:
  • An internal reflection layer is deposited on the surface of the silicon oxynitride layer away from the doped passivation layer.
  • the first reaction gas includes SiH 4 , NH 3 and N 2 O, and the doped passivation layer is a doped silicon oxynitride layer; the second reaction gas includes SiH 4 and NH 3 , the internal reflection layer is a silicon nitride layer.
  • depositing an internal reflection layer on the surface of the silicon oxynitride layer away from the doped passivation layer includes:
  • the doping gas includes a gas containing phosphorus, boron, aluminum, gallium, and indium.
  • the refractive index of the sequentially stacked multiple internal reflection layers decreases gradually.
  • the number of layers of the internal reflection layer is three.
  • the refractive index of the internal reflection layer in the first layer is between 2.35 and 2.25, and the thickness is between 10nm and 35nm; the internal reflection layer in the second layer The refractive index is between 2.25-2.1, and the thickness is between 10nm-20nm; the refractive index of the internal reflection layer in the third layer is between 2.1-1.9, and the thickness is between 10nm-20nm.
  • the fixed negative charge density on the surface of the doped silicon oxynitride layer is not less than 1 ⁇ 10 ⁇ 12 cm -2 ; the hydrogen content in the doped silicon oxynitride layer is between 18at% and 30at%.
  • the dopant gas and the first reaction gas are fed into the coating equipment, and before the doped passivation layer is deposited on the back side of the silicon wafer, it also includes:
  • Acid polishing or alkali polishing is performed on the silicon wafer.
  • the present application also provides a battery back passivation structure, which is manufactured by any one of the methods for manufacturing the battery back passivation structure described above.
  • the present application also provides a solar cell, which includes the above-mentioned cell back passivation structure.
  • a method for manufacturing a battery back passivation structure includes: feeding a dopant gas and a first reaction gas into a coating device, depositing a doped passivation layer on the back side of a silicon wafer; The second reaction gas is passed through the middle, and the internal reflection layer is directly or indirectly deposited on the surface of the doped passivation layer away from the silicon wafer.
  • the back passivation structure of the battery in this application includes a doped passivation layer and an internal reflection layer stacked on the back of the silicon wafer, and the passivation ability is enhanced;
  • the impurity gas and the first reaction gas are fed into the coating equipment for deposition at the same time, that is, the doped passivation layer is obtained in one step, avoiding the use of depositing the passivation layer first and then diffusing or ion implanting the passivation layer.
  • Doping is performed to shorten the preparation time of the doped passivation layer, and to avoid damage to the passivation layer caused by diffusion or ion implantation, which affects the performance of the back passivation structure; since the deposition is a doped passivation layer, the passivation It has strong chemical properties, can reduce the thickness of the doped passivation layer, shorten the preparation process time, and further reduce defects such as winding plating/back field boat printing.
  • the present application also provides a battery back passivation structure and a solar battery having the above-mentioned advantages.
  • FIG. 1 is a flow chart of a method for manufacturing a battery back passivation structure provided by an embodiment of the present application
  • FIG. 2 is a flow chart of another method for fabricating a battery back passivation structure provided by an embodiment of the present application
  • FIG. 3 is a schematic diagram of a rear passivation structure of a battery provided in an embodiment of the present application.
  • the current back passivation structure of solar cells is to deposit an aluminum oxide film layer or a silicon nitride oxide film layer on the back side of a silicon wafer.
  • the thickness of the silicon oxide film layer is relatively thick, resulting in long preparation time and low preparation efficiency, and at the same time, it will increase defects such as winding plating/back field boat printing.
  • FIG. 1 is a flow chart of a method for manufacturing a battery back passivation structure provided by an embodiment of the present application.
  • the method includes:
  • Step S101 Passing dopant gas and first reaction gas into the coating device, and depositing a doped passivation layer on the back side of the silicon wafer.
  • the doped passivation layer is generally deposited by plasma enhanced chemical vapor deposition (PECVD), and the corresponding coating equipment is PECVD equipment.
  • PECVD plasma enhanced chemical vapor deposition
  • PECVD equipment which can be selected by oneself.
  • plate type PECVD equipment or tube type PECVD equipment can be used.
  • the doping gas includes doping elements required in the doped passivation layer, and the specific gas type depends on the doping elements.
  • the first reaction gas refers to the gas required for depositing and forming the non-doped passivation layer, and the specific gas type depends on the material of the passivation layer.
  • the doped passivation layer is not limited in this application, and can be set by itself.
  • the doped passivation layer may be a doped silicon nitride layer, or a doped silicon oxynitride layer.
  • the atomic layer deposition process for preparing the aluminum oxide layer is omitted, and only the process of plasma-enhanced chemical vapor deposition is carried out, so as to reduce the sluggish time of the back passivation structure semi-finished product in the workshop and the process. Fragmentation rate and other bad.
  • the doped passivation layer is a doped silicon oxynitride layer
  • the density of fixed negative charges on the surface of the doped silicon nitride layer is about 1 ⁇ 10 ⁇ 12 cm ⁇ 2
  • the fixed negative charges on the surface of the doped silicon oxynitride layer Density can reach not less than 1 ⁇ 10 ⁇ 13cm -2 , after annealing, doped silicon nitride can fix negative charge density around 1 ⁇ 10 ⁇ 11cm -2 after annealing at higher than 400°C, doped silicon oxynitride After annealing at 700°C, the fixed negative charge density may not be lower than about 1 ⁇ 10 ⁇ 12cm -2 .
  • the oxygen-rich film has a higher intermediate band gap, interface and interface well density, and a higher interface fixed charge density than the nitrogen-rich film.
  • the heterogeneous (N-type) silicon nitride layer has more fixed negative charges and a longer minority carrier lifetime, which makes the performance of the back passivation structure of the battery better.
  • the first reaction gas includes SiH 4 , NH 3 and N 2 O.
  • the second reaction gas includes SiH 4 and NH 3 , and at this time, the internal reflection layer is a silicon nitride layer.
  • the first reaction gas includes SiH 4 and NH 3 .
  • the doped silicon oxynitride layer contains more H, and the H passivation ability is enhanced; the doped silicon oxynitride layer combines the advantages of the surface passivation of the aluminum oxide layer and the silicon oxynitride layer, and the surface passivation Compared with the single-layer silicon oxynitride layer, the field passivation ability of the doped silicon oxynitride layer is enhanced, thereby improving the efficiency of the solar cell.
  • the doping elements are not limited in this application, and it depends on the circumstances.
  • the doping element can be a group 3A element (such as boron, aluminum, gallium, indium) or a group 5A element (such as phosphorus, arsenic), and correspondingly, the doping gas can be B 2 H 6 , TMA (trimethylaluminum ), TMGa (trimethylgallium), PH 3 , etc.
  • the doping gas will not cause doping of other elements to the doped passivation layer.
  • Step S102 Passing a second reaction gas into the film coating device to directly or indirectly deposit an internal reflection layer on the surface of the doped passivation layer away from the silicon wafer.
  • Direct deposition means that after the doped passivation layer is deposited, the direct doped passivation layer deposits an internal reflection layer on the surface far away from the silicon wafer
  • indirect deposition means that after the doped passivation layer is deposited, the heterogeneous passivation
  • a layer of silicon oxynitride is deposited on the surface away from the silicon wafer, and then an internal reflection layer is deposited on the surface of the silicon oxynitride layer, see below for details.
  • the internal reflection layer is generally a silicon nitride layer, and correspondingly, the second reaction gas includes SiH 4 and NH 3 .
  • the number of layers of the internal reflection layer can be one layer or multiple layers, which is not limited in this application.
  • the back passivation structure of the battery in this application includes a doped passivation layer and an internal reflection layer stacked on the back of the silicon wafer, and the passivation ability is enhanced; It is obtained by passing the first reaction gas into the coating equipment for deposition at the same time, that is, the doped passivation layer is obtained in one step, avoiding the use of depositing the passivation layer first and then doping the passivation layer by diffusion or ion implantation.
  • the passivation performance Strong can reduce the thickness of the doped passivation layer, shorten the preparation process time, and then reduce the defects such as winding plating/back field boat printing.
  • FIG. 2 is a flow chart of another method for fabricating a battery back passivation structure provided in an embodiment of the present application. The method includes:
  • Step S201 Passing a doping gas and a first reaction gas into the coating device, and depositing a doped passivation layer on the back side of the silicon wafer.
  • the doped passivation layer is a doped silicon oxynitride layer.
  • Step S202 Passing the first reaction gas into the coating device, and depositing a silicon oxynitride layer on the surface of the doped passivation layer away from the silicon wafer.
  • a silicon oxynitride layer is deposited between the doped silicon oxynitride layer and the internal reflection layer.
  • phosphorus-doped silicon oxynitride is more complex, and not only Si-H bonds, There are N-H bonds, P-H bonds, etc., and the content of doped silicon oxynitride hydrogen (H) is between 18at% and 30at%, which is significantly higher than that of doped silicon nitride.
  • the content of H is between 15at% and 25at%.
  • the hydrogen rich in silicon oxynitride diffuses into the silicon wafer body and combines with the defect center in high-energy steps such as high temperature or electric injection, thereby deactivating the defect; and it can fill the dangling bonds on the surface of the silicon wafer, which can be used for the surface of the silicon wafer and the silicon wafer.
  • the substrate provides more sufficient hydrogen passivation, thereby further improving the efficiency of the solar cell; and, when the doped silicon oxynitride layer is relatively thin, it can also provide a certain surface passivation.
  • the doped silicon oxynitride layer has a lower adjustable refractive index range than the doped silicon nitride layer.
  • the refractive index of the doped silicon oxynitride layer is controlled between 1.4 and 1.8, and the doped silicon oxynitride layer
  • the thickness is between 10-50nm; the refractive index of the silicon oxynitride layer is between 1.6-1.9, and the thickness of the silicon oxynitride layer is 10-20nm.
  • Step S203 Introduce a second reaction gas into the coating device, and deposit an internal reflection layer on the surface of the silicon oxynitride layer away from the doped passivation layer.
  • depositing an internal reflection layer on the surface of the silicon oxynitride layer away from the doped passivation layer includes:
  • the doping gas includes a gas containing phosphorus, boron, aluminum, gallium, and indium.
  • the refractive index of the sequentially stacked multiple internal reflection layers gradually decreases, which can enhance the passivation performance of the back passivation structure, reduce the reflectivity of the back surface, and optimize the reduction of the internal reflection layer.
  • the opposite effect and the passivation effect with the body surface, the refractive index of the internal reflection layer located on the silicon oxynitride layer away from the silicon wafer surface is the largest, which has a better body surface passivation effect, and further improves the open circuit voltage of the solar cell.
  • the number of layers of the internal reflection layer includes but not limited to three layers, four layers, five layers and so on.
  • the refractive index of the first internal reflection layer is between 2.35 and 2.25, and the thickness is between 10nm and 35nm;
  • the refractive index of the internal reflection layer in the second layer is between 2.25 ⁇ 2.1, and the thickness is between 10nm ⁇ 20nm;
  • the refractive index of the internal reflection layer in the third layer is between 2.1 ⁇ 1.9, and the thickness is between 10nm ⁇ 20nm. between.
  • the schematic diagram of the back passivation structure of the battery is shown in Figure 3, from top to bottom are silicon wafer 1, doped silicon oxynitride layer 2, silicon oxynitride layer 3, The silicon nitride layer 4 is stacked in three layers.
  • the dopant gas and the first reaction gas are introduced into the coating equipment, and before the doped passivation layer is deposited on the back side of the silicon wafer, it also includes: :
  • Acid polishing or alkali polishing is performed on the silicon wafer to remove damage on the surface of the silicon wafer.
  • Step 1 performing acid polishing and etching on the silicon wafer
  • Step 2 Use four kinds of special gases including PH 3 , SiH 4 , NH 3 and N 2 O to pass through the PECVD equipment to make a silicon oxynitride layer doped with phosphorus.
  • the refractive index of the silicon oxynitride layer doped with phosphorus is controlled at 1.4 Between ⁇ 1.8, the thickness of silicon oxynitride layer doped with phosphorus is between 10 ⁇ 50nm;
  • Step 3 On the surface of the phosphorus-doped silicon oxynitride layer, use three special gases, SiH 4 , NH 3 and N 2 O, to deposit a silicon oxynitride layer.
  • the refractive index of the silicon oxynitride layer is between 1.6 and 1.9.
  • the silicon layer thickness is controlled at 10-20nm;
  • Step 4 On the surface of the silicon nitride oxide layer, use SiH 4 and NH 3 to make the first layer of silicon nitride layer, the refractive index is between 2.35 and 2.25, and the thickness of the first layer of silicon nitride layer is controlled at 10 ⁇ 35nm;
  • Step 5 On the surface of the first silicon nitride layer, use SiH 4 and NH 3 to make the second silicon nitride layer, the refractive index is between 2.25 and 2.1, and the thickness of the second silicon nitride layer is Controlled at 10-20nm;
  • Step 6 On the surface of the second silicon nitride layer, use SiH 4 and NH 3 to make a third silicon nitride layer, the refractive index of which is between 2.1 and 1.9, and the thickness of the third silicon nitride layer is Controlled at 10-20nm.
  • Step 1 performing acid polishing and etching on the silicon wafer
  • Step 2 Use four special gases including B 2 H 6 , SiH 4 , NH 3 and N 2 O to pass through the PECVD equipment to make a boron-doped silicon oxynitride layer.
  • the refractive index of the boron-doped silicon oxynitride layer is controlled Between 1.4 and 1.8, the thickness of boron-doped silicon oxynitride layer is between 10 and 50nm;
  • Step 3 On the surface of boron-doped silicon oxynitride layer, use SiH 4 , NH 3 , and N 2 O to deposit a silicon oxynitride layer.
  • the refractive index of the silicon oxynitride layer is between 1.6 and 1.9.
  • the silicon layer thickness is controlled at 10-20nm;
  • Step 4 On the surface of the silicon nitride oxide layer, use SiH 4 and NH 3 to make the first layer of silicon nitride layer, the refractive index is between 2.35 and 2.25, and the thickness of the first layer of silicon nitride layer is controlled at 10 ⁇ 35nm;
  • Step 5 On the surface of the first silicon nitride layer, use SiH 4 and NH 3 to make the second silicon nitride layer, the refractive index is between 2.25 and 2.1, and the thickness of the second silicon nitride layer is Controlled at 10-20nm;
  • Step 6 On the surface of the second silicon nitride layer, use SiH 4 and NH 3 to make a third silicon nitride layer, the refractive index of which is between 2.1 and 1.9, and the thickness of the third silicon nitride layer is Controlled at 10-20nm.
  • Step 1 performing acid polishing and etching on the silicon wafer
  • Step 2 Use four kinds of special gases including TMGa, SiH 4 , NH 3 and N 2 O to pass through the PECVD equipment to make a silicon oxynitride layer doped with gallium.
  • the refractive index of the silicon oxynitride layer doped with gallium is controlled at 1.4 ⁇ Between 1.8 and gallium-doped silicon oxynitride layer thickness between 10 and 50nm;
  • Step 3 On the surface of the gallium-doped silicon oxynitride layer, use three special gases, SiH 4 , NH 3 and N 2 O, to deposit a silicon oxynitride layer.
  • the refractive index of the silicon oxynitride layer is between 1.6 and 1.9.
  • the silicon layer thickness is controlled at 10-20nm;
  • Step 4 On the surface of the silicon nitride oxide layer, use SiH 4 and NH 3 to make the first layer of silicon nitride layer, the refractive index is between 2.35 and 2.25, and the thickness of the first layer of silicon nitride layer is controlled at 10 ⁇ 35nm;
  • Step 5 On the surface of the first silicon nitride layer, use SiH 4 and NH 3 to make the second silicon nitride layer, the refractive index is between 2.25 and 2.1, and the thickness of the second silicon nitride layer is Controlled at 10-20nm;
  • Step 6 On the surface of the second silicon nitride layer, use SiH 4 and NH 3 to make a third silicon nitride layer, the refractive index of which is between 2.1 and 1.9, and the thickness of the third silicon nitride layer is Controlled at 10-20nm.
  • Step 1 performing acid polishing and etching on the silicon wafer
  • Step 2 Use four kinds of special gases including TMA, SiH 4 , NH 3 and N 2 O to pass through the PECVD equipment to make an aluminum-doped silicon oxynitride layer.
  • the refractive index of the aluminum-doped silicon oxynitride layer is controlled at 1.4 ⁇ 1.8, the thickness of the aluminum-doped silicon oxynitride layer is between 10 and 50nm;
  • Step 3 On the surface of the aluminum-doped silicon oxynitride layer, use three special gases, SiH 4 , NH 3 and N 2 O, to deposit a silicon oxynitride layer.
  • the refractive index of the silicon oxynitride layer is between 1.6 and 1.9.
  • the silicon layer thickness is controlled at 10-20nm;
  • Step 4 On the surface of the silicon nitride oxide layer, use SiH 4 and NH 3 to make the first layer of silicon nitride layer, the refractive index is between 2.35 and 2.25, and the thickness of the first layer of silicon nitride layer is controlled at 10 ⁇ 35nm;
  • Step 5 On the surface of the first silicon nitride layer, use SiH 4 and NH 3 to make the second silicon nitride layer, the refractive index is between 2.25 and 2.1, and the thickness of the second silicon nitride layer is Controlled at 10-20nm;
  • Step 6 On the surface of the second silicon nitride layer, use SiH 4 and NH 3 to make a third silicon nitride layer, the refractive index of which is between 2.1 and 1.9, and the thickness of the third silicon nitride layer is Controlled at 10-20nm.
  • the present application also provides a battery back passivation structure, which is manufactured by the manufacturing method of the battery back passivation structure as described in any one of the above-mentioned embodiments.
  • the back passivation structure of the battery in this application includes a doped passivation layer and an internal reflection layer stacked on the back of the silicon wafer, and the passivation ability is enhanced; in this application, when depositing the doped passivation layer, the doping gas It is deposited through the coating equipment at the same time as the first reaction gas, that is, the doped passivation layer is obtained in one step, avoiding the use of depositing the passivation layer first and then doping the passivation layer by diffusion or ion implantation.
  • the passivation performance Strong can reduce the thickness of the doped passivation layer, shorten the preparation process time, and then reduce the defects such as winding plating/back field boat printing.
  • the present application also provides a solar cell, which includes the cell back passivation structure described in the above embodiments.
  • the solar cell can be a double-sided PERC (Passivated Emitter Rear Contact, passivated emitter and back local contact) cell, or a PERL (Passivated Emitter and Rear Locally-diffused, passivated emitter back local diffusion) cell, etc.
  • PERC Passivated Emitter Rear Contact, passivated emitter and back local contact
  • PERL Passivated Emitter and Rear Locally-diffused, passivated emitter back local diffusion
  • each embodiment in this specification is described in a progressive manner, each embodiment focuses on the difference from other embodiments, and the same or similar parts of each embodiment can be referred to each other.
  • the description is relatively simple, and for the related information, please refer to the description of the method part.
  • a battery back passivation structure, a manufacturing method thereof, and a solar battery provided in the present application have been introduced in detail above.
  • specific examples are used to illustrate the principles and implementation methods of the present application, and the descriptions of the above embodiments are only used to help understand the methods and core ideas of the present application. It should be pointed out that those skilled in the art can make some improvements and modifications to the application without departing from the principles of the application, and these improvements and modifications also fall within the protection scope of the claims of the application.

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Abstract

一种电池背钝化结构及其制作方法、太阳能电池，该制作方法包括向镀膜设备中通入掺杂气体和第一反应气体，在硅片（1）的背面沉积掺杂型钝化层；向镀膜设备中通入第二反应气体，在掺杂型钝化层远离硅片（1）的表面直接或间接沉积内反射层。该电池背钝化结构包括层叠在硅片（1）背面的掺杂型钝化层和内反射层，钝化能力增强。

Description

一种电池背钝化结构及其制作方法、太阳能电池
本申请要求于2021年09月09日提交中国专利局、申请号为202111056381.1、发明名称为“一种电池背钝化结构及其制作方法、太阳能电池”的中国专利申请的优先权，其全部内容通过引用结合在本申请中。
技术领域
本申请涉及光伏技术领域，特别是涉及一种电池背钝化结构及其制作方法、太阳能电池。
背景技术
太阳能电池是一种可以将太阳能转化为电能的器件。为了提升太阳能电池的效率，背钝化技术应运而生。目前，太阳能电池的背钝化结构是在硅片的背面沉积氧化铝膜层或者氮氧化硅膜层，单层的背钝化膜层钝化能力差，并且单层氮氧化硅膜层厚度较厚，导致制备时间长，制备效率低，同时还会增加绕镀/背场舟印等不良。
因此，如何解决上述技术问题应是本领域技术人员重点关注的。
发明内容
本申请的目的是提供一种电池背钝化结构及其制作方法、太阳能电池，以提升电池背钝化结构的钝化能力、缩短制备工艺时间和提升电池良率。
为解决上述技术问题，本申请提供一种电池背钝化结构制作方法，包括：
向镀膜设备中通入掺杂气体和第一反应气体，在硅片的背面沉积掺杂型钝化层；
向所述镀膜设备中通入第二反应气体，在所述掺杂型钝化层远离所述硅片的表面直接或者间接沉积内反射层。
可选的，在硅片的背面沉积掺杂型钝化层之后，还包括：
向所述镀膜设备中通入所述第一反应气体，在所述掺杂型钝化层远离所述硅片的表面沉积氮氧化硅层；
相应的，在所述掺杂型钝化层远离所述硅片的表面间接沉积内反射层包括：
在所述氮氧化硅层远离所述掺杂型钝化层的表面沉积内反射层。
可选的，所述第一反应气体包括SiH 4、NH 3和N 2O，所述掺杂型钝化层为掺杂型氮氧化硅层；所述第二反应气体包括SiH 4和NH 3，所述内反射层为氮化硅层。
可选的，在所述氮氧化硅层远离所述掺杂型钝化层的表面沉积内反射层包括：
在所述氮氧化硅层远离所述掺杂型钝化层的表面沉积依次层叠的多层所述内反射层，所述掺杂气体包括含磷、硼、铝、镓、铟的气体。
可选的，在远离所述硅片的方向上，依次层叠的多层所述内反射层的折射率逐渐减小。
可选的，所述内反射层的层数为三层。
可选的，在远离所述氮氧化硅层的方向上，第一层所述内反射层的折射率在2.35～2.25之间，厚度在10nm～35nm之间；第二层所述内反射层的折射率在2.25～2.1之间，厚度在10nm～20nm之间；第三层所述内反射层的折射率在2.1～1.9之间，厚度在10nm～20nm之间。
可选的，所述掺杂型氮氧化硅层表面固定负电荷密度不小于1×10^12cm -2；所述掺杂型氮氧化硅层中氢含量在18at％～30at％之间。
可选的，向镀膜设备中通入掺杂气体和第一反应气体，在硅片的背面沉积掺杂型钝化层之前，还包括：
对所述硅片进行酸抛光或者碱抛光处理。
本申请还提供一种电池背钝化结构，所述电池背钝化结构由如上述任一种所述的电池背钝化结构制作方法制得。
本申请还提供一种太阳能电池，所述太阳能电池包括上述所述的电池背钝化结构。
本申请所提供的一种电池背钝化结构制作方法，包括：向镀膜设备中通入掺杂气体和第一反应气体，在硅片的背面沉积掺杂型钝化层；向所述 镀膜设备中通入第二反应气体，在所述掺杂型钝化层远离所述硅片的表面直接或者间接沉积内反射层。
可见，本申请中的电池背钝化结构包括层叠在硅片背面的掺杂型钝化层和内反射层，钝化能力增强；本申请中在沉积掺杂型钝化层时是采用将掺杂气体和第一反应气体同时通入镀膜设备进行沉积得到的，即掺杂型钝化层是由一个步骤得到的，避免采用先沉积处钝化层再以扩散或者离子注入方式对钝化层进行掺杂，缩短掺杂型钝化层的制备时间，且避免扩散或者离子注入过程对钝化层造成损伤，影响背钝化结构的性能；由于沉积得到的是掺杂型钝化层，钝化性能强，可以减薄掺杂型钝化层的厚度，缩短制备工艺时间，进而可以减少绕镀/背场舟印等不良。
此外，本申请还提供一种具有上述优点的电池背钝化结构和太阳能电池。
附图说明
为了更清楚的说明本申请实施例或现有技术的技术方案，下面将对实施例或现有技术描述中所需要使用的附图作简单的介绍，显而易见地，下面描述中的附图仅仅是本申请的一些实施例，对于本领域普通技术人员来讲，在不付出创造性劳动的前提下，还可以根据这些附图获得其他的附图。
图1为本申请实施例所提供的一种电池背钝化结构制作方法的流程图；
图2为本申请实施例所提供的另一种电池背钝化结构制作方法的流程图；
图3为本申请实施例所提供的一种电池背钝化结构示意图。
具体实施方式
为了使本技术领域的人员更好地理解本申请方案，下面结合附图和具体实施方式对本申请作进一步的详细说明。显然，所描述的实施例仅仅是本申请一部分实施例，而不是全部的实施例。基于本申请中的实施例，本领域普通技术人员在没有做出创造性劳动前提下所获得的所有其他实施 例，都属于本申请保护的范围。
在下面的描述中阐述了很多具体细节以便于充分理解本发明，但是本发明还可以采用其他不同于在此描述的其它方式来实施，本领域技术人员可以在不违背本发明内涵的情况下做类似推广，因此本发明不受下面公开的具体实施例的限制。
正如背景技术部分所述，目前太阳能电池的背钝化结构是在硅片的背面沉积氧化铝膜层或者氮氧化硅膜层，单层的背钝化膜层钝化能力差，并且单层氮氧化硅膜层厚度较厚，导致制备时间长，制备效率低，同时还会增加绕镀/背场舟印等不良。
有鉴于此，本申请提供了一种电池背钝化结构制作方法，请参考图1，图1为本申请实施例所提供的一种电池背钝化结构制作方法的流程图，该方法包括：
步骤S101：向镀膜设备中通入掺杂气体和第一反应气体，在硅片的背面沉积掺杂型钝化层。
为了保证掺杂型钝化层的性能，掺杂型钝化层一般采用等离子体增强化学气相沉积法((plasma enhanced chemical vapor deposition，PECVD)沉积而成，相应的镀膜设备为PECVD设备。
需要说明的是，本申请中对PECVD设备的类型不做具体限定，可自行选择。例如，可以采用板式PECVD设备，或者管式PECVD设备。
掺杂气体中包括掺杂型钝化层中所需的掺杂元素，具体的气体类型根据掺杂元素而定。
第一反应气体是指沉积形成非掺杂的钝化层所需的气体，具体的气体类型根据钝化层的材料而定。
需要说明的是，本申请中对掺杂型钝化层不做限定，可自行设置。例如，掺杂型钝化层可以为掺杂型氮化硅层，或者掺杂型氮氧化硅层。本申请中无需沉积氧化铝层，省略制备氧化铝层的原子层沉积工艺，仅进行等离子体增强化学气相沉积这一道工序即可，减少背钝化结构半成品在车间呆滞时间以及工序过程中带来的碎片率及其它不良。
优选地，掺杂型钝化层为掺杂型氮氧化硅层，掺杂型氮化硅层表面固 定负电荷密度在1×10^12cm -2左右，掺杂型氮氧化硅表面固定负电荷密度可达到不小于1×10^13cm -2，经退火处理，掺杂型氮化硅在高于400℃退火后固定负电荷密度在1×10^11cm -2左右，掺杂型氮氧化硅在700℃退火后固定负电荷密度可不低于1×10^12cm -2左右。这归因于富氧薄膜相比富氮薄膜，具有较高的中间带隙及界面和界面阱密度，较高的界面固定电荷密度，掺杂型(N型)氮氧化硅层相较于掺杂型(N型)氮化硅层固定负电荷多，少子寿命长，使得电池背钝化结构的性能更好，此时，所述第一反应气体包括SiH 4、NH 3和N 2O。所述第二反应气体包括SiH 4和NH 3，此时所述内反射层为氮化硅层。
当掺杂型钝化层为掺杂型氮化硅层时，第一反应气体包括SiH 4和NH 3。
相较于氧化铝层，掺杂型氮氧化硅层含有更多的H，H钝化能力增强；掺杂型氮氧化硅层结合了氧化铝层和氮氧化硅表面钝化的优点，表面钝化能力增强；相较于单层的氮氧化硅层，掺杂型氮氧化硅层场钝化能力增强，从而提升太阳能电池的效率。
需要说明的是，本申请中对掺杂元素不做限定，视情况而定。例如，掺杂元素可以为3A族元素(如硼、铝、镓、铟)或者5A族元素(如磷、砷)，相应的，掺杂气体可以为B 2H 6、TMA(三甲基铝)、TMGa(三甲基镓)、PH 3等。除了所需的掺杂元素，掺杂气体不会对掺杂型钝化层造成其他元素的掺杂。
步骤S102：向所述镀膜设备中通入第二反应气体，在所述掺杂型钝化层远离所述硅片的表面直接或者间接沉积内反射层。
直接沉积即在沉积掺杂型钝化层后，直接掺杂型钝化层在远离硅片的表面沉积内反射层，间接沉积即在沉积掺杂型钝化层后，先在杂型钝化层在远离硅片的表面沉积氮氧化硅层，然后在氮氧化硅层的表面沉积内反射层，具体见下文。内反射层一般为氮化硅层，相应的，第二反应气体包括SiH 4和NH 3。
需要指出的是，内反射层的层数既可以一层，也可以为多层，本申请中不做限定。
本申请中的电池背钝化结构包括层叠在硅片背面的掺杂型钝化层和内 反射层，钝化能力增强；本申请中在沉积掺杂型钝化层时是采用将掺杂气体和第一反应气体同时通入镀膜设备进行沉积得到的，即掺杂型钝化层是由一个步骤得到的，避免采用先沉积处钝化层再以扩散或者离子注入方式对钝化层进行掺杂，缩短掺杂型钝化层的制备时间，且避免扩散或者离子注入过程对钝化层造成损伤，影响背钝化结构的性能；由于沉积得到的是掺杂型钝化层，钝化性能强，可以减薄掺杂型钝化层的厚度，缩短制备工艺时间，进而可以减少绕镀/背场舟印等不良。
请参考图2，图2为本申请实施例所提供的另一种电池背钝化结构制作方法的流程图，该方法包括：
步骤S201：向镀膜设备中通入掺杂气体和第一反应气体，在硅片的背面沉积掺杂型钝化层。
本步骤中掺杂型钝化层为掺杂型氮氧化硅层。
步骤S202：向所述镀膜设备中通入所述第一反应气体，在所述掺杂型钝化层远离所述硅片的表面沉积氮氧化硅层。
本实施例中在掺杂型氮氧化硅层与内反射层的之间沉积一层氮氧化硅层，掺磷氮氧化硅相比于氮化硅合金体系更复杂，不仅存在Si-H键、N-H键，还存在P-H键等，掺杂型氮氧化硅氢(H)含量在18at％～30at％之间，要显著高于掺杂氮化硅H含量15at％至25at％之间，掺杂型氮氧化硅丰富的氢在高温或电注入等高能步骤中扩散到硅片体内与缺陷中心结合，从而使缺陷失活；并且可填补硅片表面的悬挂键，可以为硅片表面及硅片基体提供更充分的氢钝化，从而进一步提升太阳能电池的效率；并且，当掺杂型氮氧化硅层比较薄时，还可以提供一定的表面钝化。
作为正表面钝化和减反膜，既要实现较优的表面钝化又要最大限度的降低光的反射，因此则需要更低的反射率材料去实现。掺杂型氮氧化硅层相比掺杂型氮化硅层具有更低的可调折射率范围，掺杂型氮氧化硅层折射率控制在1.4～1.8之间，掺杂型氮氧化硅层厚度在10～50nm之间；氮氧化硅层的折射率在1.6～1.9之间，氮氧化硅层厚度在10～20nm。
步骤S203：向所述镀膜设备中通入第二反应气体，在所述氮氧化硅层 远离所述掺杂型钝化层的表面沉积内反射层。
作为一种可实施的方式，在所述氮氧化硅层远离所述掺杂型钝化层的表面沉积内反射层包括：
在所述氮氧化硅层远离所述掺杂型钝化层的表面沉积依次层叠的多层所述内反射层，所述掺杂气体包括含磷、硼、铝、镓、铟的气体。
在远离所述硅片的方向上，依次层叠的多层所述内反射层的折射率逐渐减小，可以增强背钝化结构的钝化性能，降低背面的反射率，优化内反射层的减反效果和与体表面的钝化效果，位于氮氧化硅层远离硅片表面的内反射层的折射率最大，其具有更好的体表面钝化效果，进一步提升太阳能电池的开路电压。
内反射层的层数包括但不限于三层、四层、五层等等。
当内反射层的层数为三层时，在远离所述氮氧化硅层的方向上，第一层所述内反射层的折射率在2.35～2.25之间，厚度在10nm～35nm之间；第二层所述内反射层的折射率在2.25～2.1之间，厚度在10nm～20nm之间；第三层所述内反射层的折射率在2.1～1.9之间，厚度在10nm～20nm之间。当内反射层的层数为三层时，电池背钝化结构的示意图如图3所示，由上至下依次为硅片1、掺杂型氮氧化硅层2、氮氧化硅层3、三层层叠的氮化硅层4。
在上述任一实施例的基础上，在本申请的一个实施例中，向镀膜设备中通入掺杂气体和第一反应气体，在硅片的背面沉积掺杂型钝化层之前，还包括：
对所述硅片进行酸抛光或者碱抛光处理，以去除硅片表面的损伤。
具体的抛光处理过程已为本领域技术人员所熟知，此处不再详细赘述。
下面以不同的掺杂元素，采用PECVD方法为例，对本申请中的电池背钝化结构制作方法进行阐述。
例一
步骤1、对硅片进行酸抛光刻蚀处理；
步骤2、利用PH 3、SiH 4、NH 3和N 2O共4种特气通入PECVD设备中，制 作掺杂磷的氮氧化硅层，掺杂磷的氮氧化硅层折射率控制在1.4～1.8之间，掺杂磷的氮氧化硅层厚度在10～50nm之间；
步骤3、在掺杂磷的氮氧化硅层表面，使用SiH 4、NH 3和N 2O共三种特气沉积氮氧化硅层，氮氧化硅层折射率在1.6～1.9之间，氮氧化硅层厚控制在10～20nm；
步骤4、在氮氧化硅层的表面，利用SiH 4和NH 3两种特气制作第一层氮化硅层，折射率在2.35～2.25之间，第一层氮化硅层厚度控制在10～35nm；
步骤5、在第一层氮化硅层的表面，利用SiH 4和NH 3两种特气制作第二层氮化硅层，折射率在2.25～2.1之间，第二层氮化硅层厚度控制在10～20nm；
步骤6、在第二层氮化硅层的表面，利用SiH 4和NH 3两种特气制作第三层氮化硅层，折射率在2.1～1.9之间，第三层氮化硅层厚度控制在10～20nm。
例二
步骤1、对硅片进行酸抛光刻蚀处理；
步骤2、利用B 2H 6、SiH 4、NH 3和N 2O共4种特气通入PECVD设备中，制作掺杂硼的氮氧化硅层，掺杂硼的氮氧化硅层折射率控制在1.4～1.8之间，掺杂硼的氮氧化硅层厚度在10～50nm之间；
步骤3、在掺杂硼的氮氧化硅层表面，使用SiH 4、NH 3和N 2O共三种特气沉积氮氧化硅层，氮氧化硅层折射率在1.6～1.9之间，氮氧化硅层厚控制在10～20nm；
步骤4、在氮氧化硅层的表面，利用SiH 4和NH 3两种特气制作第一层氮化硅层，折射率在2.35～2.25之间，第一层氮化硅层厚度控制在10～35nm；
步骤5、在第一层氮化硅层的表面，利用SiH 4和NH 3两种特气制作第二层氮化硅层，折射率在2.25～2.1之间，第二层氮化硅层厚度控制在10～20nm；
步骤6、在第二层氮化硅层的表面，利用SiH 4和NH 3两种特气制作第三层氮化硅层，折射率在2.1～1.9之间，第三层氮化硅层厚度控制在10～20nm。
例三
步骤1、对硅片进行酸抛光刻蚀处理；
步骤2、利用TMGa、SiH 4、NH 3和N 2O共4种特气通入PECVD设备中，制作掺杂镓的氮氧化硅层，掺杂镓的氮氧化硅层折射率控制在1.4～1.8之间， 掺杂镓的氮氧化硅层厚度在10～50nm之间；
步骤3、在掺杂镓的氮氧化硅层表面，使用SiH 4、NH 3和N 2O共三种特气沉积氮氧化硅层，氮氧化硅层折射率在1.6～1.9之间，氮氧化硅层厚控制在10～20nm；
步骤4、在氮氧化硅层的表面，利用SiH 4和NH 3两种特气制作第一层氮化硅层，折射率在2.35～2.25之间，第一层氮化硅层厚度控制在10～35nm；
步骤5、在第一层氮化硅层的表面，利用SiH 4和NH 3两种特气制作第二层氮化硅层，折射率在2.25～2.1之间，第二层氮化硅层厚度控制在10～20nm；
步骤6、在第二层氮化硅层的表面，利用SiH 4和NH 3两种特气制作第三层氮化硅层，折射率在2.1～1.9之间，第三层氮化硅层厚度控制在10～20nm。
例四
步骤1、对硅片进行酸抛光刻蚀处理；
步骤2、利用TMA、SiH 4、NH 3和N 2O共4种特气通入PECVD设备中，制作掺杂铝的氮氧化硅层，掺杂铝的氮氧化硅层折射率控制在1.4～1.8之间，掺杂铝的氮氧化硅层厚度在10～50nm之间；
步骤3、在掺杂铝的氮氧化硅层表面，使用SiH 4、NH 3和N 2O共三种特气沉积氮氧化硅层，氮氧化硅层折射率在1.6～1.9之间，氮氧化硅层厚控制在10～20nm；
步骤4、在氮氧化硅层的表面，利用SiH 4和NH 3两种特气制作第一层氮化硅层，折射率在2.35～2.25之间，第一层氮化硅层厚度控制在10～35nm；
步骤5、在第一层氮化硅层的表面，利用SiH 4和NH 3两种特气制作第二层氮化硅层，折射率在2.25～2.1之间，第二层氮化硅层厚度控制在10～20nm；
步骤6、在第二层氮化硅层的表面，利用SiH 4和NH 3两种特气制作第三层氮化硅层，折射率在2.1～1.9之间，第三层氮化硅层厚度控制在10～20nm。
本申请还提供一种电池背钝化结构，所述电池背钝化结构由如上述任一实施例所述的电池背钝化结构制作方法制得。
本申请中的电池背钝化结构包括层叠在硅片背面的掺杂型钝化层和内反射层，钝化能力增强；本申请中在沉积掺杂型钝化层时是采用将掺杂气 体和第一反应气体同时通入镀膜设备进行沉积得到的，即掺杂型钝化层是由一个步骤得到的，避免采用先沉积处钝化层再以扩散或者离子注入方式对钝化层进行掺杂，缩短掺杂型钝化层的制备时间，且避免扩散或者离子注入过程对钝化层造成损伤，影响背钝化结构的性能；由于沉积得到的是掺杂型钝化层，钝化性能强，可以减薄掺杂型钝化层的厚度，缩短制备工艺时间，进而可以减少绕镀/背场舟印等不良。
本申请还提供一种太阳能电池，所述太阳能电池包括上述实施例所述的电池背钝化结构。
太阳能电池可以为双面PERC(Passivated Emitter Rear Contact，钝化发射极及背局域接触)电池，或者PERL(Passivated Emitter and Rear Locally-diffused，钝化发射极背部局域扩散)电池等等。
本说明书中各个实施例采用递进的方式描述，每个实施例重点说明的都是与其它实施例的不同之处，各个实施例之间相同或相似部分互相参见即可。对于实施例公开的装置而言，由于其与实施例公开的方法相对应，所以描述的比较简单，相关之处参见方法部分说明即可。
以上对本申请所提供的一种电池背钝化结构及其制作方法、太阳能电池进行了详细介绍。本文中应用了具体个例对本申请的原理及实施方式进行了阐述，以上实施例的说明只是用于帮助理解本申请的方法及其核心思想。应当指出，对于本技术领域的普通技术人员来说，在不脱离本申请原理的前提下，还可以对本申请进行若干改进和修饰，这些改进和修饰也落入本申请权利要求的保护范围内。

Claims (11)

  1. 一种电池背钝化结构制作方法，其特征在于，包括：
    向镀膜设备中通入掺杂气体和第一反应气体，在硅片的背面沉积掺杂型钝化层；
    向所述镀膜设备中通入第二反应气体，在所述掺杂型钝化层远离所述硅片的表面直接或者间接沉积内反射层。
  2. 如权利要求1所述的电池背钝化结构制作方法，其特征在于，在硅片的背面沉积掺杂型钝化层之后，还包括：
    向所述镀膜设备中通入所述第一反应气体，在所述掺杂型钝化层远离所述硅片的表面沉积氮氧化硅层；
    相应的，在所述掺杂型钝化层远离所述硅片的表面间接沉积内反射层包括：
    在所述氮氧化硅层远离所述掺杂型钝化层的表面沉积内反射层。
  3. 如权利要求2所述的电池背钝化结构制作方法，其特征在于，所述第一反应气体包括SiH 4、NH 3和N 2O，所述掺杂型钝化层为掺杂型氮氧化硅层；所述第二反应气体包括SiH 4和NH 3，所述内反射层为氮化硅层。
  4. 如权利要求3所述的电池背钝化结构制作方法，其特征在于，在所述氮氧化硅层远离所述掺杂型钝化层的表面沉积内反射层包括：
    在所述氮氧化硅层远离所述掺杂型钝化层的表面沉积依次层叠的多层所述内反射层，所述掺杂气体包括含磷、硼、铝、镓、铟的气体。
  5. 如权利要求4所述的电池背钝化结构制作方法，其特征在于，在远离所述硅片的方向上，依次层叠的多层所述内反射层的折射率逐渐减小。
  6. 如权利要求5所述的电池背钝化结构制作方法，其特征在于，所述内反射层的层数为三层。
  7. 如权利要求6所述的电池背钝化结构制作方法，其特征在于，在远离所述氮氧化硅层的方向上，第一层所述内反射层的折射率在2.35～2.25之间，厚度在10nm～35nm之间；第二层所述内反射层的折射率在2.25～2.1之间，厚度在10nm～20nm之间；第三层所述内反射层的折射率在2.1～1.9之间，厚度在10nm～20nm之间。
  8. 如权利要求3所述的电池背钝化结构制作方法，其特征在于，所述掺杂型氮氧化硅层表面固定负电荷密度不小于1×10^12cm -2；所述掺杂型氮氧化硅层中氢含量在18at％～30at％之间。
  9. 如权利要求1至8任一项所述的电池背钝化结构制作方法，其特征在于，向镀膜设备中通入掺杂气体和第一反应气体，在硅片的背面沉积掺杂型钝化层之前，还包括：
    对所述硅片进行酸抛光或者碱抛光处理。
  10. 一种电池背钝化结构，其特征在于，所述电池背钝化结构由如权利要求1至9任一项所述的电池背钝化结构制作方法制得。
  11. 一种太阳能电池，其特征在于，所述太阳能电池包括如权利要求10所述的电池背钝化结构。
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