WO2023142407A1 - 射频前端模块及相应的射频前端系统、芯片及电子设备 - Google Patents

射频前端模块及相应的射频前端系统、芯片及电子设备 Download PDF

Info

Publication number
WO2023142407A1
WO2023142407A1 PCT/CN2022/107712 CN2022107712W WO2023142407A1 WO 2023142407 A1 WO2023142407 A1 WO 2023142407A1 CN 2022107712 W CN2022107712 W CN 2022107712W WO 2023142407 A1 WO2023142407 A1 WO 2023142407A1
Authority
WO
WIPO (PCT)
Prior art keywords
power
radio frequency
power supply
frequency front
end module
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/CN2022/107712
Other languages
English (en)
French (fr)
Inventor
李�浩
白云芳
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Vanchip Tianjin Electronic Technology Co Ltd
Original Assignee
Vanchip Tianjin Electronic Technology Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from CN202210203460.9A external-priority patent/CN114337567B/zh
Application filed by Vanchip Tianjin Electronic Technology Co Ltd filed Critical Vanchip Tianjin Electronic Technology Co Ltd
Priority to KR1020247000278A priority Critical patent/KR102896041B1/ko
Priority to JP2024505298A priority patent/JP2025504729A/ja
Priority to EP22923214.5A priority patent/EP4472072A4/en
Publication of WO2023142407A1 publication Critical patent/WO2023142407A1/zh
Priority to US18/409,789 priority patent/US20240146260A1/en
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

Links

Images

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/68—Combinations of amplifiers, e.g. multi-channel amplifiers for stereophonics
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/20—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers
    • H03F3/24—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers of transmitter output stages
    • H03F3/245—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers of transmitter output stages with semiconductor devices only
    • G—PHYSICS
    • G05—CONTROLLING; REGULATING
    • G05F—SYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
    • G05F1/00—Automatic systems in which deviations of an electric quantity from one or more predetermined values are detected at the output of the system and fed back to a device within the system to restore the detected quantity to its predetermined value or values, i.e. retroactive systems
    • G05F1/10—Regulating voltage or current 
    • G05F1/46—Regulating voltage or current  wherein the variable actually regulated by the final control device is DC
    • G05F1/56—Regulating voltage or current  wherein the variable actually regulated by the final control device is DC using semiconductor devices in series with the load as final control devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01P—WAVEGUIDES; RESONATORS, LINES, OR OTHER DEVICES OF THE WAVEGUIDE TYPE
    • H01P5/00—Coupling devices of the waveguide type
    • H01P5/12—Coupling devices having more than two ports
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
    • H03F1/02—Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation
    • H03F1/0205—Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation in transistor amplifiers
    • H03F1/0211—Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation in transistor amplifiers with control of the supply voltage or current
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
    • H03F1/02—Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation
    • H03F1/0205—Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation in transistor amplifiers
    • H03F1/0277—Selecting one or more amplifiers from a plurality of amplifiers
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
    • H03F1/52—Circuit arrangements for protecting such amplifiers
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
    • H03F1/56—Modifications of input or output impedances, not otherwise provided for
    • H03F1/565—Modifications of input or output impedances, not otherwise provided for using inductive elements
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/189—High-frequency amplifiers, e.g. radio frequency amplifiers
    • H03F3/19—High-frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only
    • H03F3/195—High-frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only in integrated circuits
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/20—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers
    • H03F3/21—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers with semiconductor devices only
    • H03F3/211—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers with semiconductor devices only using a combination of several amplifiers
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/72—Gated amplifiers, i.e. amplifiers which are rendered operative or inoperative by means of a control signal
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04B—TRANSMISSION
    • H04B1/00—Details of transmission systems, not covered by a single one of groups H04B3/00 - H04B13/00; Details of transmission systems not characterised by the medium used for transmission
    • H04B1/38—Transceivers, i.e. devices in which transmitter and receiver form a structural unit and in which at least one part is used for functions of transmitting and receiving
    • H04B1/40—Circuits
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2200/00—Indexing scheme relating to amplifiers
    • H03F2200/204—A hybrid coupler being used at the output of an amplifier circuit
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2200/00—Indexing scheme relating to amplifiers
    • H03F2200/387—A circuit being added at the output of an amplifier to adapt the output impedance of the amplifier
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2200/00—Indexing scheme relating to amplifiers
    • H03F2200/411—Indexing scheme relating to amplifiers the output amplifying stage of an amplifier comprising two power stages
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2200/00—Indexing scheme relating to amplifiers
    • H03F2200/451—Indexing scheme relating to amplifiers the amplifier being a radio frequency amplifier
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2200/00—Indexing scheme relating to amplifiers
    • H03F2200/516—Some amplifier stages of an amplifier use supply voltages of different value
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2203/00—Indexing scheme relating to amplifiers with only discharge tubes or only semiconductor devices as amplifying elements covered by H03F3/00
    • H03F2203/72—Indexing scheme relating to gated amplifiers, i.e. amplifiers which are rendered operative or inoperative by means of a control signal
    • H03F2203/7236—Indexing scheme relating to gated amplifiers, i.e. amplifiers which are rendered operative or inoperative by means of a control signal the gated amplifier being switched on or off by putting into parallel or not, by choosing between amplifiers by (a ) switch(es)

Definitions

  • the invention relates to a radio frequency front-end module, and also relates to a multi-mode multi-frequency radio frequency front-end system including the radio frequency front-end module, an integrated circuit chip and electronic equipment, and belongs to the technical field of radio frequency integrated circuits.
  • RF front-end modules are required to have more working modes and frequency bandwidths to meet the requirements of communication standards in different regions, and at the same time achieve higher work efficiency so as to maintain the long-term battery life of electronic equipment.
  • the ET mode is a working mode in which a connection is established between the working voltage of the power amplifier and the input radio frequency signal so that they follow each other in real time, thereby improving the working efficiency of the power amplifier.
  • the APT mode is a working mode in which the working voltage of the power amplifier is automatically adjusted according to the pre-output power of the power amplifier combined with its own parameters of the power amplifier.
  • the existing RF front-end modules usually use high voltage power supply in a high power state.
  • high-voltage power supply will reduce the reliability of the RF front-end module
  • Boost DC-DC modules are required, which will significantly increase the cost of electronic equipment.
  • the operating current required for low-voltage power supply is much larger than that for high-voltage power supply.
  • Existing power management chips generally cannot provide a large enough operating current, which makes it difficult for RF front-end modules to achieve high power status when powered by low voltage. .
  • the primary technical problem to be solved by the present invention is to provide a radio frequency front-end module with an improved power supply mode.
  • the radio frequency front-end module can eliminate the limitation of the overall maximum output power caused by the insufficient working current of the power management chip under the working state of low voltage and high power.
  • Another technical problem to be solved by the present invention is to provide a radio frequency front-end system including the above radio frequency front-end module.
  • Another technical problem to be solved by the present invention is to provide an integrated circuit chip including the above radio frequency front-end module and corresponding electronic equipment.
  • a radio frequency front-end module including at least one driver amplifier and at least one power amplifier, the output end of the driver amplifier is connected to the input end of the power amplifier;
  • the RF front-end module is powered by the power supply VCC during operation; and at least one driving amplifier and/or power amplifier is jointly powered by the power supply VCC and the battery power supply Vbatt when preset power switching conditions are met.
  • the power switching condition is: the maximum operating current of the radio frequency front-end module reaches or exceeds the maximum current that a single power management chip can provide.
  • the power switching condition is: the output power of the radio frequency front-end module reaches or exceeds the maximum linear power when the power supply VCC supplies power alone.
  • the driving amplifiers are cascaded to form a driving amplifier circuit.
  • the power amplifiers are connected in parallel to form a power amplification circuit.
  • the output end of the power amplifier is connected to an impedance matching network;
  • the impedance matching network includes a switch, a capacitor and an inductor, and the switch follows the working state of the power amplifier to open and close, changing the impedance matching network. output impedance.
  • both the drive amplifier and the power amplifier have independently controlled power supply networks.
  • each power supply network is connected in series with an overcurrent protection circuit and an overvoltage protection circuit.
  • the power supply network is composed of a first bypass capacitor, a second bypass capacitor, a sixth bypass capacitor and a first switch; wherein, one end of the first bypass capacitor is grounded, and the other end is connected to a battery power supply; One end of the second bypass capacitor is grounded, and the other end is connected to the common end of the first switch; one end of the sixth bypass capacitor is grounded, and the other end is connected to the power supply; the other end of the first switch is switched between two power supply options, one of which is One is battery power and the other is power supply.
  • the power supply network is composed of a first bypass capacitor, a second bypass capacitor, and a second switch; wherein, one end of the second bypass capacitor is connected to one end of the second switch, and the other end is directly grounded; the other end of the second switch One end is connected to the battery power supply on the one hand, and one end of the first bypass capacitor is connected to the other end, and the other end of the first bypass capacitor is directly grounded.
  • the power supply network is composed of a third bypass capacitor, a fourth bypass capacitor and a third switch; wherein, one end of the third bypass capacitor is connected to the power supply, and the other end is grounded; one end of the fourth bypass capacitor is connected to the power supply power supply, and the other end is connected to the third switch and grounded.
  • the input end of the power amplifier is provided with a power divider, and the output end is provided with a power combiner;
  • the power divider is any one of a 90-degree power divider, a Wilkerson power divider, a transformer power divider or a 180-degree power divider;
  • the power combiner is any one of a 90-degree power combiner, a Wilkerson power combiner, a transformer power combiner or a 180-degree power combiner.
  • the power splitter is replaced by a coupler.
  • a multi-mode multi-frequency radio frequency front-end system including a battery power supply Vbatt, a power management chip and N parallel radio frequency front-end modules, and the battery power supply Vbatt supplies power to the power management chip , the power management chip provides a corresponding power supply VCC; the battery power supply Vbatt and the power supply VCC respectively supply power to each radio frequency front-end module; wherein, N is a positive integer.
  • an integrated circuit chip including the above radio frequency front-end module.
  • an electronic device including the above-mentioned radio frequency front-end module.
  • the radio frequency front-end module provided by the present invention can eliminate the limitation of the insufficient working current of the power management chip on the overall maximum output power under the working state of low voltage and high power, and satisfy the requirement of electronic equipment for APT (ie Average Power Tracking) mode application requirements.
  • the technical improvement scheme provided by the invention has a clear principle and a simple structure, and can be applied to various radio frequency front-end modules.
  • FIG. 1 is a schematic diagram of a typical RF front-end module in the prior art
  • Fig. 2 is in embodiment 1 of the present invention, the circuit schematic diagram of radio frequency front-end module
  • FIG. 3 is a schematic circuit diagram of a radio frequency front-end module in Embodiment 2 of the present invention.
  • Fig. 4 is the multimode multi-frequency radio frequency front-end system structural diagram that adopts the radio frequency front-end module provided by the present invention
  • FIG. 5 is a schematic diagram of a power supply architecture of a multi-mode multi-frequency radio frequency front-end system using the radio frequency front-end module provided by the present invention
  • FIG. 6 is a schematic circuit diagram of a radio frequency front-end module in Embodiment 3 of the present invention.
  • FIG. 7 is a schematic diagram of the decomposition structure of three corresponding power supply networks (PSNs) in Embodiment 3 of the present invention.
  • PSNs power supply networks
  • FIG. 8 is a schematic circuit diagram of a radio frequency front-end module in Embodiment 4 of the present invention.
  • FIG. 9 is a schematic diagram of the decomposition structure of three corresponding power supply networks (PSNs) in Embodiment 4 of the present invention.
  • FIG. 10 is a schematic circuit diagram of a radio frequency front-end module in Embodiment 5 of the present invention.
  • FIG. 11 is a schematic diagram of the decomposition structure of three corresponding power supply networks (PSNs) in Embodiment 5 of the present invention.
  • PSNs power supply networks
  • FIG. 12 is a schematic circuit diagram of a radio frequency front-end module in Embodiment 6 of the present invention.
  • FIG. 13 is a schematic diagram of the decomposition structure of three corresponding power supply networks (PSNs) in Embodiment 6 of the present invention.
  • PSNs power supply networks
  • Figures 14 to 17 are schematic diagrams of different modified examples of Embodiment 7 of the present invention; wherein, in Figure 14, the 90-degree power divider is used to divide the output power into two, and the output power is synthesized by a 90-degree power combiner; The power divider divides the input power into two, and synthesizes the output power through the Wilkerson power combiner; in Figure 16, the input power is divided into two through the transformer power divider, and the output power is synthesized through the transformer power combiner; in Figure 17, through 180 The 180-degree power divider divides the input power into two, and synthesizes the output power through the 180-degree power combiner;
  • FIG. 18 is a schematic circuit diagram of a radio frequency front-end module in Embodiment 8 of the present invention.
  • FIG. 19 is a schematic circuit diagram of a radio frequency front-end module in Embodiment 9 of the present invention.
  • FIG. 20 is a schematic circuit diagram of a radio frequency front-end module in Embodiment 10 of the present invention.
  • Fig. 21 is an example diagram of an electronic device using the radio frequency front-end module.
  • a typical RF front-end module in the prior art includes an input matching circuit, an amplifying unit, an output matching circuit, a control unit and a switch; wherein, the input matching circuit is connected to the input terminal on the one hand, and the amplifying unit on the other hand.
  • the amplifying unit is connected between the input matching circuit and the output matching circuit, and is used to realize the power amplification of the input small signal;
  • the output matching circuit is connected to the amplifying unit on the one hand, and on the other hand Connect one of the gating switches to realize the power matching of the amplifying unit;
  • the control unit is connected between the gating switch and the bias power terminal of the amplifying unit to provide the bias required for the working of the amplifying unit and the gating switch voltage and logic levels.
  • the gating switch controls the amplified radio frequency signal to select different ports for output according to the logic level.
  • the amplifying unit usually includes at least one driving amplifier (DA for short) and at least one power amplifier (PA for short).
  • both the driving amplifier and the power amplifier may be powered by the battery power supply Vbatt; or, the driving amplifier is powered by the battery power supply Vbatt, and the power amplifier is powered by the power supply VCC.
  • DA driving amplifier
  • PA power amplifier
  • both the driving amplifier and the power amplifier may be powered by the battery power supply Vbatt; or, the driving amplifier is powered by the battery power supply Vbatt, and the power amplifier is powered by the power supply VCC.
  • a certain amplifier must be powered by the battery power supply Vbatt.
  • the battery power supply Vbatt is a fixed voltage and does not have an average power tracking function, so the realized work efficiency is very low, and it cannot enter the APT mode, so it cannot meet the requirements of modern communication technology for high-efficiency applications.
  • an embodiment of the present invention firstly provides a radio frequency front-end module with an improved power supply mode.
  • the core idea of the RF front-end module is that during normal operation, the amplifying unit is powered by a single power supply VCC to ensure that the RF front-end module can achieve APT (average power tracking) mode.
  • the amplifying unit is jointly powered by the power supply VCC and the battery power supply Vbatt, so as to ensure that the RF front-end module can achieve a high-power working state under the condition of low-voltage power supply.
  • radio frequency front-end module Various implementations of the radio frequency front-end module will be described in detail below with reference to the different embodiments shown in FIGS. 2 to 20 .
  • the radio frequency front-end module includes at least one stage of driving amplifying circuit and at least one stage of power amplifying circuit.
  • the driving amplifying circuit and the power amplifying circuit are cascaded together to form an amplifying unit.
  • the drive amplifier circuit includes at least one drive amplifier (if there is more than one drive amplifier, multiple drive amplifiers are cascaded), and its main function is to provide gain and drive power to the power amplifier circuit.
  • the power amplifying circuit includes at least one power amplifier (if there is more than one power amplifier, multiple power amplifiers are connected in parallel).
  • Impedance matching networks can be set between adjacent levels of drive amplifiers and between drive amplifier circuits and power amplifier circuits. At the same time, corresponding impedance matching networks can also be set between the input terminal and the driving amplifier circuit and between the power amplifier circuit and the output terminal, serving as input matching circuits and output matching circuits respectively.
  • the driving amplifying circuit includes a driving amplifier DA
  • the power amplifying circuit includes a power amplifier PA.
  • a first impedance matching network (matching network, abbreviated as MN) MN1 is set between the input terminal of the RF front-end module and the driving amplifier DA
  • a second impedance matching network MN2 is set between the driving amplifier DA and the power amplifier PA
  • the power amplifier PA A third impedance matching network MN3 is set between the output terminal of the radio frequency front-end module.
  • the power supply VCC supplies power to the power amplifier PA through the first power supply network PSN1, and supplies power to the driving amplifier DA through the third power supply network PSN3.
  • the battery power supply Vbatt supplies power to the power amplifier PA through the second power supply network PSN2 when the preset power supply switching condition is satisfied.
  • the driving amplifier DA has an independently set first bias voltage Vreg1
  • the power amplifier PA has an independently set second bias voltage Vreg2.
  • the power supply VCC is provided by the power management chip, which is used to provide the corresponding driving amplifier (DA) and power amplifier (PA) with operating voltage and current; the driving amplifier (DA) is responsible for providing the gain and power amplifier (PA) required Input power; the power amplifier (PA) provides the output power.
  • Each impedance matching network (such as MN1, MN2, and MN3 in FIG. 2 ) may be composed of switches, capacitors, inductors, and passive components such as couplers and transformers, which will not be described in detail here.
  • the driving amplifier circuit is realized by cascading the first driving amplifier DA1 and the second driving amplifier DA2, and a first impedance is set between the first driving amplifier DA1 and the second driving amplifier DA2
  • the matching network MN1 serves as an interstage matching network.
  • the input terminal of the first driving amplifier DA1 is connected to the input terminal of the radio frequency front-end module.
  • the power amplifier circuit is realized by two parallel power amplifiers PA1 and PA2. Wherein, the output end of the second driving amplifier DA2 is connected to the second impedance matching network MN2.
  • the second impedance matching network MN2 is respectively connected to the input terminals of the two parallel connected power amplifiers PA1 and PA2 as an impedance matching and power distribution network.
  • the output end of the first power amplifier PA1 is connected to one end of the third impedance matching network MN3, the output end of the second power amplifier PA2 is connected to one end of the fourth impedance matching network MN4, and the third impedance matching network MN3 is connected to the fourth impedance matching network MN4.
  • the other ends are connected in parallel and are commonly connected to the output ends of the RF front-end module.
  • the third impedance matching network MN3 and the fourth impedance matching network MN4 connected to the output end can be composed of passive devices such as switches, capacitors, inductors, couplers, and transformers, and are used as output matching and power combining networks to match the output impedance Optimal load impedance to the power amplifier.
  • Other impedance matching networks such as the first impedance matching network MN1 and the second impedance matching network MN2 may also be composed of passive components such as capacitors, inductors, couplers, and transformers.
  • each driving amplifying circuit and power amplifying circuit has an independently controlled power supply network.
  • These supply networks can consist of bypass capacitors, inductors and switches. Utilizing these power supply networks, the power supply terminals of each drive amplifier circuit and power amplifier circuit can realize the power supply VCC (provided by the power management chip), the battery power supply Vbatt and the high impedance (that is, the state of being disconnected from the power supply) under different output power requirements. ) to switch between different power output states.
  • the power supply VCC is respectively connected to the first driving amplifier DA1 and the second driving amplifier DA2 through the third power supply network PSN3 .
  • the first driving amplifier DA1 and the second driving amplifier DA2 have independently set first bias voltage Vreg1 and second bias voltage Vreg2 respectively.
  • the first power amplifier PA1 has an independently set third bias voltage Vreg3
  • the second power amplifier PA2 has an independently set fourth bias voltage Vreg4.
  • the power supply VCC supplies power to the first power amplifier PA1 through the first power supply network PSN1.
  • the battery power supply Vbatt supplies power to the second power amplifier PA2 through the second power supply network PSN2 when the preset power supply switching condition is met.
  • the above four bias voltages Vreg1 , Vreg2 , Vreg3 , Vreg4 respectively provide bias voltages for the corresponding driver amplifier (DA) and power amplifier (PA).
  • the radio frequency front-end module When the radio frequency front-end module is working normally, if it is in the output state of medium and low power, you can choose to let some power amplifiers work while the rest of the power amplifiers are turned off.
  • the fourth bias voltage Vreg4 of the bias voltage turns off the second power amplifier PA2, so that only the driving amplifier circuit of the previous stage and the first power amplifier PA1 in the amplification unit work normally.
  • only a single power supply needs to be supplied by the power supply VCC, and the entire working current of the entire amplifying circuit is provided by the power supply VCC. Since the voltage value and current value output by the power supply VCC can be flexibly adjusted, the RF front-end module can realize a high-power working state under the condition of low-voltage power supply through the control of the power supply VCC.
  • the radio frequency front-end module When the radio frequency front-end module is working normally, if it is in a high-power output state, the first power amplifier PA1 and the second power amplifier PA2 can work simultaneously. At this time, if the power supply terminal of a power amplifier is connected to the power supply VCC provided by the power management chip, then the maximum current of the power amplifier does not exceed the maximum operating current of the power management chip. Since the maximum operating current that a single power management chip can provide is limited, the maximum output power of the RF front-end module is often limited by the maximum operating current of the power supply VCC, which is difficult to meet actual needs.
  • the present invention improves the power supply mode of the radio frequency front-end module, when the preset power switching condition is satisfied, the amplifying unit is no longer only powered by the power supply VCC as a single power supply, but is powered by the power supply VCC and the battery power Vbatt Both power supplies are powered together.
  • the power switching conditions here include but are not limited to the following situations: 1. The maximum operating current of the RF front-end module reaches or exceeds the maximum current that a single power management chip can provide; or, 2. The output power of the RF front-end module reaches or exceeds the specified The maximum linear power when the above-mentioned power supply VCC supplies power alone.
  • the maximum linear power refers to the maximum power that the RF front-end module can output when ACLR (Adjacent Channel Leakage Ratio, adjacent channel leakage ratio) and EVM (Error Vector Magnitude, error vector magnitude) meet the requirements of 3GPP specifications.
  • ACLR Adjacent Channel Leakage Ratio, adjacent channel leakage ratio
  • EVM Error Vector Magnitude, error vector magnitude
  • the specific values of the above ACLR and EVM can be obtained by testing with a spectrum analyzer or a mobile phone comprehensive tester.
  • the battery power supply Vbatt the battery power supply Vbatt at this time is equivalent to a supplementary power supply
  • the battery power supply Vbatt is added to the power supply work of the drive amplifier and/or power amplifier, that is, the power supply of at least one power amplifier and/or drive amplifier is connected. terminal, so that the problem that the maximum output power of the radio frequency front-end module is limited by the maximum operating current of the power supply VCC can be solved.
  • the output matching network of the RF front-end module (such as the third impedance matching network MN3 and the fourth impedance matching network MN4 in FIG. 3) has the following characteristics: when the power supply voltage of a certain power amplifier changes, it will affect The working state of the power amplifier is, for example, changed from an amplified state to an off state, or from an off state to an amplified state.
  • the output impedance can be adjusted by controlling the switch in the impedance matching network, for example, one impedance value is obtained when the switch is closed, and another impedance value is obtained when the switch is opened.
  • FIG. 4 is a schematic structure diagram of a multi-mode multi-frequency radio frequency front-end system using the radio frequency front-end module.
  • this multi-mode multi-frequency RF front-end system comprises battery power supply Vbatt, power management chip and N parallel RF front-end modules (RF FEM1, RF FEM2...RF FEMN), wherein N is positive integer.
  • Each radio frequency front-end module adopts the basic architecture in Embodiment 1 above.
  • the battery power supply Vbatt supplies power to a power management IC (PMIC for short), and the power management chip provides a corresponding power supply VCC.
  • PMIC power management IC
  • the battery power Vbatt and the power supply VCC respectively supply power to each radio frequency front-end module.
  • FIG. 5 is a schematic diagram of a power supply architecture of a multi-mode and multi-frequency radio frequency front-end system using the radio frequency front-end module.
  • the battery power Vbatt and the power supply VCC pass through the first power supply network PSN1, and the output Vout1 supplies power to the first power amplifier PA1;
  • the battery power Vbatt and the power supply VCC pass through the second power supply network PSN2, and output Vout2 Supply power to the second power amplifier PA2;
  • the battery power Vbatt and the power supply VCC pass through the third power supply network PSN3, and the output Vout3 supplies power to the first driver amplifier DA1 and the first driver amplifier DA2.
  • N RF front-end modules connected in parallel, and so on.
  • the radio frequency front-end module and the corresponding multi-mode multi-frequency radio frequency front-end system provided by the present invention can have various power output states, so as to meet the requirements of different communication modes.
  • the output state of the RF front-end module and the corresponding multi-mode multi-frequency RF front-end system can be divided into three power segments: high power (High power mode, abbreviated as HPM), middle power (middle power mode, abbreviated as MPM) and low power (Low power mode, abbreviated as LPM).
  • the specific power division of the above three sections is related to the chip design, and the value setting is more flexible, for example, it can be 18 ⁇ 26dBm (high power), 8 ⁇ 18dbm (medium power) and less than 8dBm (low power), or 16 ⁇ 26dBm (low power). 28dBm (high power), 6 ⁇ 16dbm (medium power) and less than 6dBm (low power), and 18 ⁇ 30dBm (high power), 6 ⁇ 18dbm (medium power) and less than 6dBm (low power).
  • the above output state may be further subdivided into 6 or 8 or even more power segments, which will not be described here one by one.
  • the radio frequency front-end module and the corresponding multi-mode multi-frequency radio frequency front-end system provided by the present invention can work in different frequency bands.
  • These frequency bands include but are not limited to the low frequency band (abbreviated as LB) approximately in the range of 600MHz to 900MHz, the intermediate frequency band in the approximate range of 1800MHz to 2200MHz (abbreviated as MB) and the high frequency band approximately in the range of 2300MHz to 2700MHz, etc. for example.
  • FIG. 7 is a schematic diagram of the exploded structure of three corresponding power supply networks (PSNs) in Embodiment 3 shown in FIG. 6 .
  • the first power supply network PSN1 for supplying power to the first power amplifier PA1 is composed of two bypass capacitors C3 and C4 and a switch SPST3.
  • the bypass capacitor C3 is connected to the power supply VCC, and the other end is directly grounded; one end of the bypass capacitor C4 is connected to the power supply VCC, and the other end is connected to the switch SPST3 and then grounded.
  • the second power supply network PSN2 for powering the second power amplifier PA2 is composed of two bypass capacitors C1 and C2 and a switch SPST1.
  • One end of the bypass capacitor C2 is connected to the common end of the switch SPST1, and the other end is directly grounded; the other end of the switch SPST1 is connected to the battery power supply Vbatt on the one hand, and connected to one end of the bypass capacitor C1 on the other hand.
  • the other end of the bypass capacitor C1 is directly grounded.
  • a fifth impedance matching network MN5 is provided at the output end of the second power amplifier PA2, and the fifth impedance matching network MN5 is grounded through a series switch SPST2.
  • the fifth impedance matching network MN5 is used as the output impedance adjustment network of the second power amplifier PA2, and may be composed of passive components such as capacitors, inductors, and resistors.
  • the switch SPST1 when the amplifying unit in the radio frequency front-end module is in the multi-power supply mode, the switch SPST1 is in a conducting state to provide power supply for the second power amplifier PA2; the switch SPST3 is also in a conducting state, and the bypass capacitor C4 is connected to the circuit; at the same time, the switch SPST2 is turned off; the fifth impedance matching network MN5 is not connected to the circuit.
  • the switch SPST1 When the amplifying unit in the RF front-end module is in a single power supply mode, the switch SPST1 is turned off, and the switch SPST2 is closed, thereby connecting the fifth impedance matching network MN5 to the circuit to compensate for the impedance change caused by the non-operation of the second power amplifier PA2;
  • the switch SPST3 When the amplifying unit in the RF front-end module is not working, the switch SPST3 is turned off, the bypass capacitor C4 is not connected to the circuit, and the SPST1 is turned off to be in a high-impedance state. It can be seen from this that the bypass capacitor C4 and the switch SPST3 are also optional circuit designs.
  • FIG. 9 is a schematic diagram of the exploded structure of the corresponding three power supply networks (PSNs) in Embodiment 4 shown in FIG. 8 .
  • the first power supply network PSN1 for supplying power to the first power amplifier PA1 is composed of two bypass capacitors C3 and C4 and a switch SPST4.
  • the bypass capacitor C3 is connected to the power supply VCC, and the other end is directly grounded; one end of the bypass capacitor C4 is connected to the power supply VCC, and the other end is connected to the switch SPST4 and then grounded.
  • the circuit design of this part is the same as that of the corresponding part in Embodiment 3.
  • the difference between embodiment 4 and embodiment 3 is mainly reflected in the second power supply network PSN2 that supplies power to the second power amplifier PA2.
  • the second power supply network PSN2 includes three bypass capacitors C1 , C2 and C6 and a single pole double throw switch SPDT1 . Wherein, one end of the bypass capacitor C1 is grounded, and the other end is connected to the battery power supply Vbatt.
  • bypass capacitor C2 One end of the bypass capacitor C2 is grounded, and the other end is connected to the common end of the SPDT1. One end of the bypass capacitor C6 is grounded, and the other end is connected to the power supply VCC. The other end of the SPDT1 switches between two power options, one of which is the battery power Vbatt and the other is the power supply VCC.
  • the single-pole double-throw switch SPDT1 selects the battery power supply Vbatt conduction;
  • the throw switch SPDT1 selects the power supply VCC to be turned on, so that the amplifying unit is in the APT mode.
  • the switch SPST4 is turned on; when the amplifying unit in the RF front-end module is not working, the switch SPST4 is turned off, and the single-pole double-throw switch SPDT1 is turned off, and is in a high-impedance state.
  • FIG. 11 is a schematic diagram of the exploded structure of the corresponding three power supply networks (PSNs) in Embodiment 5 shown in FIG. 10 .
  • the first power supply network PSN1 that supplies power to the first power amplifier PA1 and the second power supply network PSN2 that supplies power to the second power amplifier PA2 both adopt the circuit design of the second power supply network PSN2 in Embodiment 3, That is, the first power supply network PSN1 includes three bypass capacitors C3, C4 and C7 and a single-pole double-throw switch SPDT2.
  • the second power supply network PSN2 includes three bypass capacitors C1 , C2 and C6 and a single pole double throw switch SPDT1 . Wherein, one end of the bypass capacitor C1 is grounded, and the other end is connected to the battery power supply Vbatt.
  • bypass capacitor C2 One end of the bypass capacitor C2 is grounded, and the other end is connected to the common end of the SPDT1. One end of the bypass capacitor C6 is grounded, and the other end is connected to the power supply VCC. The other end of the SPDT1 switches between two power options, one of which is the battery power Vbatt and the other is the power supply VCC.
  • SPDT1 and SPDT2 when the amplifying unit in the radio frequency front-end module is in multi-power supply mode, SPDT1 and SPDT2 all select battery power supply Vbatt conduction; When the amplifying unit in the radio frequency front-end module is in single power supply mode , the single-pole double-throw switches SPDT1 and SPDT2 both select the power supply VCC to be turned on, so that the amplifying unit is in the APT mode. When the amplifying unit in the radio frequency front-end module is turned off, both the SPDT1 and the switch SPDT2 are turned off, and are in a high-impedance state.
  • FIG. 13 is a schematic diagram of the exploded structure of the corresponding three power supply networks (PSNs) in Embodiment 6 shown in FIG. 12 .
  • the first power supply network PSN1 for supplying power to the first power amplifier PA1 is composed of two bypass capacitors C3 and C4 and a switch SPST3.
  • the second power supply network PSN2 for powering the second power amplifier PA2 is composed of two bypass capacitors C1 and C2 and an LDO circuit. Wherein, one end of the bypass capacitor C2 is connected to the LDO circuit, and the other end is directly grounded; the other end of the LDO circuit is connected to the battery power supply Vbatt on the one hand, and connected to one end of the bypass capacitor C1 on the other hand. The other end of the bypass capacitor C1 is directly grounded.
  • the LDO circuit is powered by the battery power supply Vbatt, and its output Vout2 is a relatively stable voltage value.
  • the voltage value of Vout2 is relatively stable, which forms an overvoltage protection for the second power amplifier PA2.
  • a fifth impedance matching network MN5 is provided at the output end of the second power amplifier PA2, and the fifth impedance matching network MN5 is grounded through a series switch SPST2.
  • the fifth impedance matching network MN5 is used as the output impedance adjustment network of the second power amplifier PA2, and may be composed of passive components such as capacitors, inductors, and resistors.
  • Embodiment 6 when the amplifying unit in the radio frequency front-end module is in the multi-power supply mode, the LDO circuit is in a conducting state to provide power supply for the second power amplifier PA2; the switch SPST3 is also in a conducting state, and the bypass capacitor C4 is connected to the circuit; at the same time, the switch SPST2 is turned off; the fifth impedance matching network MN5 is not connected to the circuit.
  • the LDO circuit When the amplifying unit in the RF front-end module is in a single power supply mode, the LDO circuit is disconnected, and the switch SPST2 is closed, so that the fifth impedance matching network MN5 is connected to the circuit to compensate for the impedance change caused by the non-operation of the second power amplifier PA2;
  • the switch SPST3 When the amplifying unit in the RF front-end module is not working, the switch SPST3 is turned off, the bypass capacitor C4 is not connected to the circuit, and the SPST1 is turned off to be in a high-impedance state. It can be seen from this that the bypass capacitor C4 and the switch SPST3 are also optional circuit designs.
  • Embodiment 7 of the present invention different power combining structures adopted by the radio frequency front-end module are disclosed.
  • the basic structure of the radio frequency front-end module is basically the same as that of Embodiment 2 shown in FIG. 3 , and will not be repeated here.
  • 14 to 17 are respectively different modification examples of the seventh embodiment.
  • Figure 14 shows that the input power is divided into two by a 90-degree power divider (Powerdivider), and the output power is synthesized by a 90-degree power combiner; in Figure 15, the input power is divided into two by a Wilkerson power divider, and the The output power is combined by the power combiner; in Figure 16, the input power is divided into two through the transformer power divider, and the output power is combined through the transformer power combiner; in Figure 17, the input power is divided into two through the 180-degree power divider , synthesize the output power through a 180-degree power combiner.
  • Powerdivider 90-degree power divider
  • each power supply network (PSN) in FIGS. 14 to 17 may be the power supply network solutions mentioned in the foregoing embodiments and their different combinations, which will not be repeated here.
  • the power divider used in Embodiment 7 can be replaced by a coupler.
  • the coupler can divide the input power into two channels unevenly, and separate them according to different ratios, such as 1:2, 1:3, etc., so as to achieve a larger range and more flexible output power adjustment.
  • Fig. 18 shows Embodiment 8 of the present invention.
  • the basic architecture of the radio frequency front-end module is basically the same as that in Embodiment 2 shown in FIG. 3 , and will not be repeated here.
  • the difference between Embodiment 8 and Embodiment 2 is mainly that an over current protection (over current protect, abbreviated as OCP) circuit and an over voltage protection (over Voltage) circuit are connected in series on the first power supply network PSN1 and/or the second power supply network PSN2 protect, abbreviated as OVP) circuit, so as to improve the working reliability of the amplifying unit.
  • OCP over current protect
  • OVP over voltage protection
  • the OCP circuit is to perform overcurrent protection and limit the maximum current when the current of the amplifying unit exceeds a certain threshold; the OVP circuit is to perform overvoltage protection and limit the maximum voltage when the power supply voltage of the amplifying unit exceeds the threshold.
  • Fig. 19 shows Embodiment 9 of the present invention.
  • the basic architecture of the radio frequency front-end module is basically the same as that of Embodiment 1 shown in FIG. 2 , and will not be repeated here.
  • Embodiment 9 is different from Embodiment 1 mainly in that the battery power supply Vbatt supplies power to the drive amplifier DA through the second power supply network PSN2; the power supply VCC only supplies power to the power amplifier PA through the first power supply network PSN1.
  • This adjustment of the power supply mode can achieve a larger range and more flexible output power regulation, and at the same time simplify the circuit design of the first power supply network PSN1 and/or the second power supply network PSN2.
  • Fig. 20 shows Embodiment 10 of the present invention.
  • the basic architecture of the radio frequency front-end module is basically the same as that of Embodiment 2 shown in FIG. 3 , and will not be repeated here.
  • the difference between Embodiment 10 and Embodiment 2 is that the battery power supply Vbatt supplies power to the drive amplifiers (such as DA1 and DA2) at all levels through the third power supply network PSN3; the power supply VCC only supplies power to the power amplifiers (such as PA1 and PA2).
  • the adjustment of this power supply mode can realize a wider range and more flexible output power regulation, and at the same time simplify the circuit design of each power supply network (PSN1-PSN3).
  • the drive amplifier circuits in the above embodiments only show one-stage or two-stage drive amplifiers, but the technical solution of the present invention is not limited thereto.
  • the drive amplifier circuit can be realized by using a single-stage drive amplifier, or by cascading three-stage, four-stage or even multi-stage drive amplifiers.
  • the power amplifying circuits in the foregoing embodiments only show one or two power amplifiers, but the technical solution of the present invention is not limited thereto.
  • the power amplifying circuit can be realized by a single power amplifier, or three, four or even multiple power amplifiers connected in parallel.
  • radio frequency front-end module provided by the embodiment of the present invention can be used in an integrated circuit chip.
  • the specific structure of the radio frequency front-end module in the integrated circuit chip will not be described in detail here.
  • the above radio frequency front-end module can also be used in electronic equipment as an important part of radio frequency integrated circuits.
  • the electronic devices mentioned here refer to devices that can be used in a mobile environment and support multiple communication standards such as GSM, EDGE, TD_SCDMA, TDD_LTE, and FDD_LTE, including mobile phones, notebook computers, tablet computers, and Internet of Vehicle terminals.
  • the technical solutions provided by the present invention are also applicable to other applications of radio frequency integrated circuits, such as communication base stations, intelligent networked vehicles, and the like.
  • the electronic device includes at least a processor and a memory, and may further include a communication component, a sensor component, a power supply component, a multimedia component, and an input/output interface according to actual needs.
  • a communication component a sensor component
  • a power supply component a multimedia component
  • an input/output interface a multimedia component
  • memory, communication components, sensor components, power supply components, multimedia components and input/output interfaces are all connected to the processor.
  • the memory can be Static Random Access Memory (SRAM), Electrically Erasable Programmable Read Only Memory (EEPROM), Erasable Programmable Read Only Memory (EPROM), Programmable Read Only Memory (PROM), Read Only Memory (ROM), magnetic memory, flash memory, etc.
  • the processor can be a central processing unit (CPU), a graphics processing unit (GPU), a field programmable logic gate array (FPGA), an application-specific integrated circuit (ASIC), a digital signal processing ( DSP) chips, etc.
  • CPU central processing unit
  • GPU graphics processing unit
  • FPGA field programmable logic gate array
  • ASIC application-specific integrated circuit
  • DSP digital signal processing
  • the radio frequency front-end module provided by the present invention can eliminate the limitation of the insufficient working current of the power management chip on the overall maximum output power under the working state of low voltage and high power, and satisfy the requirement of electronic equipment for APT (ie Average Power Tracking) mode application requirements.
  • the technical improvement scheme provided by the invention has a clear principle and a simple structure, and can be applied to various radio frequency front-end modules.
  • radio frequency front-end module and the corresponding radio frequency front-end system, chip and electronic equipment provided by the present invention have been described in detail above.
  • any obvious changes made to it without departing from the essence of the present invention will constitute an infringement of the patent right of the present invention and will bear corresponding legal responsibilities.

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Radar, Positioning & Navigation (AREA)
  • Automation & Control Theory (AREA)
  • Computer Networks & Wireless Communication (AREA)
  • Signal Processing (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Amplifiers (AREA)
  • Transmitters (AREA)

Abstract

本发明公开了一种射频前端模块，包括至少一个驱动放大器和至少一个功率放大器，驱动放大器的输出端连接功率放大器的输入端；射频前端模块在工作时由供电电源供电；在预设的电源切换条件满足时，至少一个驱动放大器和/或功率放大器由供电电源和电池电源共同供电。本发明所提供的射频前端模块能够在低电压、高功率的工作状态下，消除电源管理芯片的工作电流不足对整体最大输出功率的限制，满足电子设备对APT模式的应用需求。

Description

射频前端模块及相应的射频前端系统、芯片及电子设备 技术领域
本发明涉及一种射频前端模块，同时也涉及包括该射频前端模块的多模多频射频前端系统、集成电路芯片及电子设备，属于射频集成电路技术领域。
背景技术
随着通信技术的发展和数据业务的不断增加，以通信终端为代表的电子设备对射频前端模块的性能要求越来越高。例如，要求射频前端模块具有更多工作模式和频率带宽以满足不同地区的通信制式要求，同时还要实现更高的工作效率从而保持电子设备的长时间续航能力。
为了满足上述要求，使用包络跟踪(Envelop Tracking，简写为ET)模式或者平均功率跟踪(Average Power Track，简写为APT)模式的射频前端模块就逐步成为了业内的发展趋势。其中，ET模式是在功率放大器的工作电压与输入的射频信号之间建立联系使之实时互相跟随，从而提高功率放大器的工作效率的工作模式。APT模式是根据功率放大器的预先输出功率、结合功率放大器的自身参数来自动调整功率放大器的工作电压的工作模式。实践中，ET模式在输出功率低于预定值后，工作效率会低于APT模式，所以经常采用APT/ET模式，即高功率状态采用ET模式，中、低功率的输出状态采用APT模式。
另一方面，现有的射频前端模块在高功率状态下，通常采用高电压供电。但高电压供电一方面会降低射频前端模块的工作可靠性，另一方面需要采用Boost DC-DC模块，这将显著提高电子设备的成本。在低电压供电的情况下，射频前端模块虽然可以不需要Boost DC-DC模块供电，同时工作可靠性得到提高。但是，低电压供电时所需要的工作电流比高电压供电时要大很多，现有的电源管理芯片普遍无法提供足够大的工作电流，从而导致射频前端模块在低电压供电时难以实现高功率状态。
发明内容
本发明所要解决的首要技术问题在于提供一种改进供电方式的射 频前端模块。该射频前端模块能够在低电压、高功率的工作状态下，消除电源管理芯片的工作电流不足对整体最大输出功率的限制。
本发明所要解决的又一技术问题在于提供一种包括上述射频前端模块的射频前端系统。
本发明所要解决的又一技术问题在于提供一种包括上述射频前端模块的集成电路芯片及相应的电子设备。
为了实现上述目的，本发明采用下述的技术方案：
根据本发明实施例的第一方面，提供一种射频前端模块，包括至少一个驱动放大器和至少一个功率放大器，所述驱动放大器的输出端连接所述功率放大器的输入端；
所述射频前端模块在工作时由供电电源VCC供电；在预设的电源切换条件满足时，至少一个驱动放大器和/或功率放大器由所述供电电源VCC和电池电源Vbatt共同供电。
其中较优地，所述电源切换条件为：所述射频前端模块的最大工作电流达到或超过单个电源管理芯片所能提供的最大电流。
或者，所述电源切换条件为：所述射频前端模块的输出功率达到或超过所述供电电源VCC单独供电时的最大线性功率。
其中较优地，所述驱动放大器的数量大于一个时，各所述驱动放大器之间级联，组成驱动放大电路。
其中较优地，所述功率放大器的数量大于一个时，各所述功率放大器之间并联，组成功率放大电路。
其中较优地，所述功率放大器的输出端连接阻抗匹配网络；所述阻抗匹配网络中包括开关、电容和电感，所述开关跟随所述功率放大器的工作状态开闭，改变所述阻抗匹配网络的输出阻抗。
其中较优地，所述驱动放大器和所述功率放大器均具有独立控制的供电网络。
其中较优地，各所述供电网络串联过流保护电路和过压保护电路。
其中较优地，所述供电网络由第一旁路电容、第二旁路电容、第六旁路电容与第一开关组成；其中，第一旁路电容的一端接地，另一端连接电池电源；第二旁路电容的一端接地，另一端连接第一开关的公共端；第六旁路电容的一端接地，另一端连接供电电源；第一开关 的另一端在两个电源选项中切换，其中一个是电池电源，另一个是供电电源。
或者，所述供电网络由第一旁路电容、第二旁路电容与第二开关组成；其中，第二旁路电容的一端连接第二开关的一端，另一端直接接地；第二开关的另一端一方面连接电池电源，另一方面连接第一旁路电容的一端，所述第一旁路电容的另一端直接接地。
或者，所述供电网络由第三旁路电容、第四旁路电容与第三开关组成；其中，第三旁路电容的一端连接供电电源，另一端接地；第四旁路电容的一端连接供电电源，另一端连接所述第三开关后接地。
其中较优地，所述功率放大器的输入端设置功率分配器，输出端设置功率合成器；
所述功率分配器为90度功率分配器、Wilkerson功率分配器、transformer功率分配器或180度功率分配器中的任意一种；
所述功率合成器为90度功率合成器、Wilkerson功率合成器、transformer功率合成器或180度功率合成器中的任意一种。
或者，所述功率分配器由耦合器替代。
根据本发明实施例的第二方面，提供一种多模多频射频前端系统，包括电池电源Vbatt、电源管理芯片和N个并联的射频前端模块，所述电池电源Vbatt向所述电源管理芯片供电，所述电源管理芯片提供相应的供电电源VCC；所述电池电源Vbatt和所述供电电源VCC分别向各个射频前端模块供电；其中，N为正整数。
根据本发明实施例的第三方面，提供一种集成电路芯片，包括上述的射频前端模块。
根据本发明实施例的第四方面，提供一种电子设备，包括上述的射频前端模块。
与现有技术相比较，本发明所提供的射频前端模块能够在低电压、高功率的工作状态下，消除电源管理芯片的工作电流不足对整体最大输出功率的限制，满足电子设备对APT(即平均功率跟踪)模式的应用需求。本发明所提供的技术改进方案，原理清晰，结构简单，可以应用于各种射频前端模块。
附图说明
图1为现有技术中，一个典型的射频前端模块的模块示意图；
图2为本发明的实施例1中，射频前端模块的电路原理图；
图3为本发明的实施例2中，射频前端模块的电路原理图；
图4为采用本发明提供的射频前端模块的多模多频射频前端系统结构简图；
图5为采用本发明提供的射频前端模块的多模多频射频前端系统的供电架构示意图；
图6为本发明的实施例3中，射频前端模块的电路原理图；
图7为本发明的实施例3中，相应的三个供电网络(PSN)的分解结构示意图；
图8为本发明的实施例4中，射频前端模块的电路原理图；
图9为本发明的实施例4中，相应的三个供电网络(PSN)的分解结构示意图；
图10为本发明的实施例5中，射频前端模块的电路原理图；
图11为本发明的实施例5中，相应的三个供电网络(PSN)的分解结构示意图；
图12为本发明的实施例6中，射频前端模块的电路原理图；
图13为本发明的实施例6中，相应的三个供电网络(PSN)的分解结构示意图；
图14～图17分别为本发明的实施例7的不同变形例示意图；其中，图14中通过90度功率分配器一分为二，输出功率通过90度功率合成器合成；图15中通过Wilkerson功率分配器将输入功率一分为二，通过Wilkerson功率合成器合成输出功率；图16中通过transformer功率分配器将输入功率一分为二，通过transformer功率合成器合成输出功率；图17中通过180度功率分配器将输入功率一分为二，通过180度功率合成器合成输出功率；
图18为本发明的实施例8中，射频前端模块的电路原理图；
图19为本发明的实施例9中，射频前端模块的电路原理图；
图20为本发明的实施例10中，射频前端模块的电路原理图；
图21为采用该射频前端模块的电子设备的示例图。
具体实施方式
下面结合附图和具体实施例对本发明的技术内容进行详细具体的说明。
如图1所示，现有技术中的一个典型的射频前端模块包括输入匹配电路、放大单元、输出匹配电路、控制单元和开关；其中，输入匹配电路一方面连接输入端，另一方面连接放大单元，从而实现放大单元和前级电路的阻抗匹配；放大单元连接在输入匹配电路与输出匹配电路之间，用于实现输入小信号的功率放大；输出匹配电路一方面连接放大单元，另一方面连接选通开关中的一路，用于实现放大单元的功率匹配；控制单元连接在选通开关与放大单元的偏置电源端之间，用于提供放大单元和选通开关工作所需要的偏置电压和逻辑电平。选通开关根据该逻辑电平，控制经过放大的射频信号选择不同的端口输出。
在现有的射频前端模块中，放大单元往往包括至少一个驱动放大器(driving amplifier，简写为DA)和至少一个功率放大器(power amplifier，简写为PA)。其中，驱动放大器和功率放大器可以均由电池电源Vbatt供电；或者，驱动放大器用电池电源Vbatt供电，功率放大器用供电电源VCC供电。但是，现有的射频前端模块在中功率或低功率的输出状态下，必须有某个放大器一定要用电池电源Vbatt供电。但是，电池电源Vbatt是固定电压，不具备平均功率跟踪功能，所以实现的工作效率很低，无法进入APT模式，从而无法满足现代通信技术对高效率应用的要求。
为了解决上述问题，本发明实施例首先提供一种改进供电方式的射频前端模块。该射频前端模块的核心思路是在正常工作时，放大单元由供电电源VCC进行单一供电，确保射频前端模块可以实现APT(即平均功率跟踪)模式。在预设的电源切换条件满足时，放大单元由供电电源VCC和电池电源Vbatt两个电源共同供电，从而确保射频前端模块可以在低电压供电的情况下，实现高功率的工作状态。
下面，结合图2～图20所示的不同实施例对该射频前端模块的各种实施方式进行详细说明。
在本发明的实施例1中，该射频前端模块包括至少一级驱动放大电路和至少一级功率放大电路。其中，驱动放大电路与功率放大电路级联在一起，组成放大单元。驱动放大电路包括至少一个驱动放大器 (如果有一个以上的驱动放大器，则多个驱动放大器之间级联)，它的主要作用是提供增益和给功率放大电路提供驱动功率。功率放大电路包括至少一个功率放大器(如果有一个以上的功率放大器，则多个功率放大器之间并联)。在相邻的各级驱动放大器之间以及驱动放大电路与功率放大电路之间，可以设置阻抗匹配网络。同时，在输入端与驱动放大电路之间以及功率放大电路与输出端之间，也可以设置相应的阻抗匹配网络，分别作为输入匹配电路和输出匹配电路。
在图2所示的实施例1中，驱动放大电路包括一个驱动放大器DA，功率放大电路包括一个功率放大器PA。其中，射频前端模块的输入端与驱动放大器DA之间设置第一阻抗匹配网络(matching network，简写为MN)MN1，驱动放大器DA与功率放大器PA之间设置第二阻抗匹配网络MN2，功率放大器PA与射频前端模块的输出端之间设置第三阻抗匹配网络MN3。供电电源VCC通过第一供电网络PSN1向功率放大器PA供电，通过第三供电网络PSN3向驱动放大器DA供电。电池电源Vbatt在预设的电源切换条件满足时，通过第二供电网络PSN2向功率放大器PA供电。另外，驱动放大器DA具有独立设置的第一偏置电压Vreg1，功率放大器PA具有独立设置的第二偏置电压Vreg2。其中，供电电源VCC由电源管理芯片提供，用于给相应的驱动放大器(DA)及功率放大器(PA)提供工作电压和电流；驱动放大器(DA)负责提供增益和功率放大器(PA)所需要的输入功率；功率放大器(PA)负责提供输出功率。各个阻抗匹配网络(例如图2中的MN1、MN2和MN3)可以由开关、电容、电感以及耦合器(coupler)、变压器(transformer)等无源器件组成，在此不予赘述。
在图3所示的实施例2中，驱动放大电路由级联的第一驱动放大器DA1和第二驱动放大器DA2实现，在第一驱动放大器DA1和第二驱动放大器DA2之间设置了第一阻抗匹配网络MN1，作为级间匹配网络。第一驱动放大器DA1的输入端连接射频前端模块的输入端。功率放大电路由两个并联的功率放大器PA1和PA2实现。其中，第二驱动放大器DA2的输出端连接第二阻抗匹配网络MN2。第二阻抗匹配网络MN2分别连接两个并联的功率放大器PA1和PA2的输入端，作为阻抗匹配和功率分配网络。第一功率放大器PA1的输出端连接第三阻抗匹配网络 MN3的一端，第二功率放大器PA2的输出端连接第四阻抗匹配网络MN4的一端，第三阻抗匹配网络MN3与第四阻抗匹配网络MN4的另一端并联在一起，共同连接射频前端模块的输出端。其中，连接输出端的第三阻抗匹配网络MN3与第四阻抗匹配网络MN4可以由开关、电容、电感以及耦合器、变压器等无源器件组成，作为输出匹配和功率合成网络，用于将输出阻抗匹配到功率放大器的最优负载阻抗。其它的阻抗匹配网络如第一阻抗匹配网络MN1和第二阻抗匹配网络MN2也可以由电容、电感、耦合器、变压器等无源器件组成。
在本发明的不同实施例中，各个驱动放大电路及功率放大电路均具有独立控制的供电网络。这些供电网络可以由旁路电容、电感和开关组成。利用这些供电网络，可以使各个驱动放大电路及功率放大电路的电源端在不同输出功率要求下实现供电电源VCC(由电源管理芯片提供)、电池电源Vbatt和高阻抗(即和电源断开的状态)之间切换，以实现不同的功率输出状态。例如在图3所示的实施例2中，供电电源VCC通过第三供电网络PSN3分别连接第一驱动放大器DA1和第二驱动放大器DA2。第一驱动放大器DA1和第二驱动放大器DA2分别具有独立设置的第一偏置电压Vreg1和第二偏置电压Vreg2。类似地，第一功率放大器PA1具有独立设置的第三偏置电压Vreg3，第二功率放大器PA2具有独立设置的第四偏置电压Vreg4。供电电源VCC通过第一供电网络PSN1向第一功率放大器PA1供电。同时，电池电源Vbatt在预设的电源切换条件满足时，通过第二供电网络PSN2向第二功率放大器PA2供电。上述四个偏置电压Vreg1、Vreg2、Vreg3、Vreg4分别给相应的驱动放大器(DA)及功率放大器(PA)提供偏置电压。
当该射频前端模块在正常工作时，如果处于中、低功率的输出状态，可以选择由部分功率放大器工作而其余部分功率放大器关闭，例如在图3所示的实施例2中，可以通过调节作为偏置电压的第四偏置电压Vreg4，关断第二功率放大器PA2，从而使放大单元中只有前级的驱动放大电路和第一功率放大器PA1正常工作。此时，只需要由供电电源VCC进行单一电源供电，整个放大电路的全部工作电流由供电电源VCC提供。由于供电电源VCC输出的电压值和电流值可以灵活调节大小，因此该射频前端模块可以通过供电电源VCC的控制，在低电压 供电的情况下实现高功率的工作状态。
当该射频前端模块在正常工作时，如果处于高功率的输出状态，可以让第一功率放大器PA1和第二功率放大器PA2同时工作。此时，如果某个功率放大器的供电端连接到电源管理芯片提供的供电电源VCC上，那么该功率放大器的最大电流不超过上述电源管理芯片的最大工作电流。由于单个电源管理芯片所能提供的最大工作电流是有限的，往往使该射频前端模块的最大输出功率受到供电电源VCC的最大工作电流的限制，难以满足实际需要。为此，本发明对射频前端模块的供电方式进行了改进，在预设的电源切换条件满足时，放大单元不再仅仅由供电电源VCC作为单一电源供电，而是由供电电源VCC和电池电源Vbatt两个电源共同供电。这里的电源切换条件包括但不限于如下的情况：1.射频前端模块的最大工作电流达到或超过单个电源管理芯片所能提供的最大电流；或者，2.射频前端模块的输出功率达到或超过所述供电电源VCC单独供电时的最大线性功率。其中，最大线性功率指ACLR(Adjacent Channel Leakage Ratio，相邻频道泄漏比)和EVM(Error Vector Magnitude，误差向量幅度)满足3GPP规范要求时，射频前端模块所能输出的最大功率。上述ACLR和EVM的具体数值可以用频谱仪或手机综合测试仪测试得到。在上述电源切换条件满足时，电池电源Vbatt(此时的电池电源Vbatt相当于补充电源)加入对驱动放大器和/或功率放大器的供电工作中，即连接至少一个功率放大器和/或驱动放大器的供电端，从而可以解决该射频前端模块的最大输出功率受到供电电源VCC的最大工作电流的限制的问题。
另一方面，该射频前端模块的输出匹配网络(例如图3中的第三阻抗匹配网络MN3与第四阻抗匹配网络MN4)具有如下特点：当某个功率放大器的供电电压发生变化时，会影响该功率放大器的工作状态，例如从放大状态转为关断状态，或者从关断状态转为放大状态。此时，可以通过控制阻抗匹配网络中的开关调节其输出阻抗，例如开关闭合时为一个阻抗值，开关打开时为另一个阻抗值。通过阻抗匹配网络中的相关无源器件的灵活组合，可以实现输出端的阻抗调节，以此来补偿放大单元的工作状态的改变带来的阻抗变化。
图4是采用该射频前端模块的多模多频射频前端系统结构简图。 在图4所示的实施例中，该多模多频射频前端系统包括电池电源Vbatt、电源管理芯片和N个并联的射频前端模块(RF FEM1、RF FEM2……RF FEMN)，其中N为正整数。每个射频前端模块均采用上述实施例1中的基本架构。在该射频前端模块的应用端(通常为智能手机之类的电子设备)，电池电源Vbatt向电源管理芯片(power management IC，简写为PMIC)供电，电源管理芯片提供相应的供电电源VCC。电池电源Vbatt和供电电源VCC分别向各个射频前端模块供电。
图5是采用该射频前端模块的多模多频射频前端系统的供电架构示意图。在图5所示的实施例中，电池电源Vbatt和供电电源VCC通过第一供电网络PSN1，输出Vout1给第一功率放大器PA1供电；电池电源Vbatt和供电电源VCC通过第二供电网络PSN2，输出Vout2给第二功率放大器PA2供电；电池电源Vbatt和供电电源VCC通过第三供电网络PSN3，输出Vout3给第一驱动放大器DA1和第一驱动放大器DA2供电。如果有N个并联的射频前端模块，依此类推。
本发明所提供的射频前端模块及相应的多模多频射频前端系统可以具有多种功率输出状态，从而适应不同通信模式的要求。在本发明的一个实施例中，该射频前端模块及相应的多模多频射频前端系统的输出状态可以分为3个功率段：高功率(High power mode，简写为HPM)，中功率(middle power mode，简写为MPM)和低功率(Low power mode，简写为LPM)。上述三段的具体功率划分和芯片设计有关系，数值设定比较灵活，例如可以是18～26dBm(高功率)、8～18dbm(中功率)和小于8dBm(低功率)，也可以是16～28dBm(高功率)、6～16dbm(中功率)和小于6dBm(低功率)，还可以是18～30dBm(高功率)、6～18dbm(中功率)和小于6dBm(低功率)。在本发明的其它实施例中，上述输出状态还可以进一步细分为6个或8个甚至更多的功率段，在此不再一一举例说明。
另一方面，本发明提供的射频前端模块及相应的多模多频射频前端系统可以在不同频段下工作。这些频段包括但不限于大致在600MHz～900MHz的低频段(简写为LB)、大致在1800MHz～2200MHz的中频段(简写为MB)和大致在2300MHz～2700MHz的高频段等，在此不再一一举例说明。
下面，结合图6～图20进一步说明本发明的另外几个实施例。
在图6所示的实施例3中，射频前端模块的基本架构与图3所示的实施例2基本相同，在此不予赘述。图7是图6所示的实施例3中，相应的三个供电网络(PSN)的分解结构示意图。在实施例3中，为第一功率放大器PA1供电的第一供电网络PSN1由两个旁路(bypass)电容C3和C4与开关SPST3组成。其中，旁路电容C3的一端连接供电电源VCC，另一端直接接地；旁路电容C4的一端连接供电电源VCC，另一端连接开关SPST3后接地。类似地，为第二功率放大器PA2供电的第二供电网络PSN2由两个旁路电容C1和C2与开关SPST1组成。其中，旁路电容C2的一端连接开关SPST1的公共端，另一端直接接地；开关SPST1的另一端一方面连接电池电源Vbatt，另一方面连接旁路电容C1的一端。旁路电容C1的另一端直接接地。
可选地，在第二功率放大器PA2的输出端设置了第五阻抗匹配网络MN5，第五阻抗匹配网络MN5通过串联的开关SPST2接地。第五阻抗匹配网络MN5作为第二功率放大器PA2的输出阻抗调节网络，可以由电容、电感、电阻等无源器件组成。
在实施例3中，当射频前端模块中的放大单元处于多电源供电方式时，开关SPST1处于导通状态，为第二功率放大器PA2提供电源供应；开关SPST3也处于导通状态，将旁路电容C4接入电路中；同时，开关SPST2断开；第五阻抗匹配网络MN5不接入电路。当射频前端模块中的放大单元处于单一电源供电方式时，开关SPST1断开，开关SPST2闭合，从而将第五阻抗匹配网络MN5接入电路，弥补第二功率放大器PA2不工作带来的阻抗变化；当射频前端模块中的放大单元不工作的时候，开关SPST3断开，旁路电容C4不接入电路，SPST1断开处于高阻状态。由此可以看出，旁路电容C4和开关SPST3也是可选的电路设计。
在图8所示的实施例4中，射频前端模块的基本架构与图3所示的实施例2基本相同，在此不予赘述。图9是图8所示的实施例4中，相应的三个供电网络(PSN)的分解结构示意图。在实施例4中，为第一功率放大器PA1供电的第一供电网络PSN1由两个旁路电容C3和C4与开关SPST4组成。其中，旁路电容C3的一端连接供电电源VCC，另 一端直接接地；旁路电容C4的一端连接供电电源VCC，另一端连接开关SPST4后接地。由此可以看出，这部分的电路设计与实施例3中的对应部分相同。实施例4与实施例3所不同的电路设计主要体现在为第二功率放大器PA2供电的第二供电网络PSN2上。在实施例4中，第二供电网络PSN2包括三个旁路电容C1、C2和C6与单刀双掷开关SPDT1。其中，旁路电容C1的一端接地，另一端连接电池电源Vbatt。旁路电容C2的一端接地，另一端连接单刀双掷开关SPDT1的公共端。旁路电容C6的一端接地，另一端连接供电电源VCC。单刀双掷开关SPDT1的另一端在两个电源选项中切换，其中一个是电池电源Vbatt，另一个是供电电源VCC。
在实施例4中，当射频前端模块中的放大单元处于多电源供电方式时，单刀双掷开关SPDT1选择电池电源Vbatt导通；当射频前端模块中的放大单元处于单一电源供电方式时，单刀双掷开关SPDT1选择供电电源VCC导通，使放大单元处于APT模式。另外，当射频前端模块中的放大单元工作时，开关SPST4导通；当射频前端模块中的放大单元不工作时，开关SPST4断开，单刀双掷开关SPDT1断开，处于高阻状态。
在图10所示的实施例5中，射频前端模块的基本架构与图3所示的实施例2基本相同，在此不予赘述。图11是图10所示的实施例5中，相应的三个供电网络(PSN)的分解结构示意图。在实施例5中，为第一功率放大器PA1供电的第一供电网络PSN1和为第二功率放大器PA2供电的第二供电网络PSN2均采用了实施例3中的第二供电网络PSN2的电路设计，即第一供电网络PSN1包括三个旁路电容C3，C4和C7与单刀双掷开关SPDT2。其中，旁路电容C4的一端接地，另一端连接电池电源Vbatt。旁路电容C3的一端接地，另一端连接单刀双掷开关SPDT2的公共端。旁路电容C7的一端接地，另一端连接供电电源VCC。单刀双掷开关SPDT2的另一端在两个电源选项中切换，其中一个是电池电源Vbatt，另一个是供电电源VCC。第二供电网络PSN2包括三个旁路电容C1、C2和C6与单刀双掷开关SPDT1。其中，旁路电容C1的一端接地，另一端连接电池电源Vbatt。旁路电容C2的一端接地，另一端连接单刀双掷开关SPDT1的公共端。旁路电容C6的一端接地， 另一端连接供电电源VCC。单刀双掷开关SPDT1的另一端在两个电源选项中切换，其中一个是电池电源Vbatt，另一个是供电电源VCC。
在实施例5中，当射频前端模块中的放大单元处于多电源供电方式时，单刀双掷开关SPDT1和SPDT2均选择电池电源Vbatt导通；当射频前端模块中的放大单元处于单一电源供电方式时，单刀双掷开关SPDT1和SPDT2均选择供电电源VCC导通，使放大单元处于APT模式。当射频前端模块中的放大单元处于关断时候，单刀双掷开关SPDT1和开关SPDT2均断开，处于高阻状态。
在图12所示的实施例6中，射频前端模块的基本架构与图3所示的实施例2基本相同，在此不予赘述。图13是图12所示的实施例6中，相应的三个供电网络(PSN)的分解结构示意图。在实施例6中，为第一功率放大器PA1供电的第一供电网络PSN1由两个旁路(bypass)电容C3和C4与开关SPST3组成。其中，旁路电容C3的一端连接供电电源VCC，另一端直接接地；旁路电容C4的一端连接供电电源VCC，另一端连接开关SPST3后接地。类似地，为第二功率放大器PA2供电的第二供电网络PSN2由两个旁路电容C1和C2与LDO电路组成。其中，旁路电容C2的一端连接LDO电路，另一端直接接地；LDO电路的另一端一方面连接电池电源Vbatt，另一方面连接旁路电容C1的一端。旁路电容C1的另一端直接接地。在实施例6中，LDO电路由电池电源Vbatt供电，其输出Vout2是一个比较稳定的电压值。当电池电源Vbatt的输出电压波动较大时，Vout2的电压值比较稳定，对第二功率放大器PA2构成过压保护。可选地，在第二功率放大器PA2的输出端设置了第五阻抗匹配网络MN5，第五阻抗匹配网络MN5通过串联的开关SPST2接地。第五阻抗匹配网络MN5作为第二功率放大器PA2的输出阻抗调节网络，可以由电容、电感、电阻等无源器件组成。
在实施例6中，当射频前端模块中的放大单元处于多电源供电方式时，LDO电路处于导通状态，为第二功率放大器PA2提供电源供应；开关SPST3也处于导通状态，将旁路电容C4接入电路中；同时，开关SPST2断开；第五阻抗匹配网络MN5不接入电路。当射频前端模块中的放大单元处于单一电源供电方式时，LDO电路断开，开关SPST2闭合，从而将第五阻抗匹配网络MN5接入电路，弥补第二功率放大器PA2不 工作带来的阻抗变化；当射频前端模块中的放大单元不工作的时候，开关SPST3断开，旁路电容C4不接入电路，SPST1断开处于高阻状态。由此可以看出，旁路电容C4和开关SPST3也是可选的电路设计。
在本发明的实施例7中，公开了该射频前端模块所采用的不同的功率合成结构。在实施例7中，射频前端模块的基本架构与图3所示的实施例2基本相同，在此不予赘述。图14～图17分别为实施例7的不同变形例。其中，图14为输入功率通过90度功率分配器(Powerdivider)一分为二，输出功率通过90度功率合成器合成；图15中，通过Wilkerson功率分配器将输入功率一分为二，通过Wilkerson功率合成器合成输出功率；图16中，通过transformer功率分配器将输入功率一分为二，通过transformer功率合成器合成输出功率；图17中，通过180度功率分配器将输入功率一分为二，通过180度功率合成器合成输出功率。上述的实施例7通过功率分配器和功率合成器的灵活组合使用，可以扩大该射频前端模块的输出功率调节范围，满足不同频率和不同通信模式的实际需要。同时，图14～图17中的各个供电网络(PSN)均可以是前述实施例中提到的供电网络方案及其它们的不同组合，在此不予赘述。
需要说明的是，在实施例7中采用的功率分配器可以由耦合器(coupler)替代。耦合器可以将输入功率不平均地分为两路，按照不同的比例分离，如1：2、1：3等，从而实现更大范围、更加灵活的输出功率调节。
图18所示为本发明的实施例8。在实施例8中，射频前端模块的基本架构与图3所示的实施例2基本相同，在此不予赘述。实施例8与实施例2的不同之处主要在于在第一供电网络PSN1和/或第二供电网络PSN2上串联了过流保护(over current protect，简写为OCP)电路和过压保护(over Voltage protect，简写为OVP)电路，从而提高放大单元的工作可靠性。其中，OCP电路是当放大单元的电流超过一定门限后，进行过流保护，限制最大电流；OVP电路是当放大单元的供电电压超过门限值后，进行过压保护，限制最大电压。
图19所示为本发明的实施例9。在实施例9中，射频前端模块的基本架构与图2所示的实施例1基本相同，在此不予赘述。实施例9 与实施例1的不同之处主要在于电池电源Vbatt通过第二供电网络PSN2给驱动放大器DA供电；供电电源VCC仅仅通过第一供电网络PSN1给功率放大器PA供电。这种供电方式的调整可以实现更大范围、更加灵活的输出功率调节，同时简化第一供电网络PSN1和/或第二供电网络PSN2的电路设计。
图20所示为本发明的实施例10。在实施例10中，射频前端模块的基本架构与图3所示的实施例2基本相同，在此不予赘述。实施例10与实施例2的不同之处主要在于电池电源Vbatt通过第三供电网络PSN3给各级驱动放大器(例如DA1和DA2)供电；供电电源VCC仅仅给功率放大器(例如PA1和PA2)供电。这种供电方式的调整可以实现更大范围、更加灵活的输出功率调节，同时简化各个供电网络(PSN1～PSN3)的电路设计。
需要说明的是，上述各个实施例中的驱动放大电路仅仅示出了一级或两级驱动放大器，但本发明的技术方案并不限于此。实践中，该驱动放大电路可以采用单级驱动放大器实现，也可以采用三级、四级乃至多级驱动放大器级联实现。类似地，上述各个实施例中的功率放大电路仅仅示出了一个或两个功率放大器，但本发明的技术方案并不限于此。实践中，该功率放大电路可以采用单个功率放大器实现，也可以采用并联的三个、四个乃至多个功率放大器实现。
另外，本发明实施例提供的射频前端模块可以被用在集成电路芯片中。对于该集成电路芯片中射频前端模块的具体结构，在此不再一一详述。
上述射频前端模块还可以被用在电子设备中，作为射频集成电路的重要组成部分。这里所说的电子设备是指可以在移动环境中使用，支持GSM、EDGE、TD_SCDMA、TDD_LTE、FDD_LTE等多种通信制式的设备，包括移动电话、笔记本电脑、平板电脑、车联网终端等。此外，本发明所提供的技术方案也适用于其他射频集成电路应用的场合，例如通信基站、智能网联汽车等。
如图21所示，该电子设备至少包括处理器和存储器，还可以根据实际需要进一步包括通信组件、传感器组件、电源组件、多媒体组件及输入/输出接口。其中，存储器、通信组件、传感器组件、电源组件、 多媒体组件及输入/输出接口均与该处理器连接。存储器可以是静态随机存取存储器(SRAM)、电可擦除可编程只读存储器(EEPROM)、可擦除可编程只读存储器(EPROM)、可编程只读存储器(PROM)、只读存储器(ROM)、磁存储器、快闪存储器等，处理器可以是中央处理器(CPU)、图形处理器(GPU)、现场可编程逻辑门阵列(FPGA)、专用集成电路(ASIC)、数字信号处理(DSP)芯片等。其它通信组件、传感器组件、电源组件、多媒体组件等均可以采用通用部件实现，在此就不具体说明了。
与现有技术相比较，本发明所提供的射频前端模块能够在低电压、高功率的工作状态下，消除电源管理芯片的工作电流不足对整体最大输出功率的限制，满足电子设备对APT(即平均功率跟踪)模式的应用需求。本发明所提供的技术改进方案，原理清晰，结构简单，可以应用于各种射频前端模块。
上面对本发明所提供的射频前端模块及相应的射频前端系统、芯片及电子设备进行了详细的说明。对本领域的一般技术人员而言，在不背离本发明实质内容的前提下对它所做的任何显而易见的改动，都将构成对本发明专利权的侵犯，将承担相应的法律责任。

Claims (17)

  1. 一种射频前端模块，其特征在于包括至少一个驱动放大器和至少一个功率放大器，所述驱动放大器的输出端连接所述功率放大器的输入端；
    所述射频前端模块在工作时由供电电源供电；在预设的电源切换条件满足时，至少一个驱动放大器和/或功率放大器由所述供电电源和电池电源共同供电。
  2. 如权利要求1所述的射频前端模块，其特征在于：
    所述电源切换条件为：所述射频前端模块的最大工作电流达到或超过单个电源管理芯片所能提供的最大电流。
  3. 如权利要求1所述的射频前端模块，其特征在于：
    所述电源切换条件为：所述射频前端模块的输出功率达到或超过所述供电电源单独供电时的最大线性功率。
  4. 如权利要求1～3中任意一项所述的射频前端模块，其特征在于：
    所述驱动放大器的数量大于一个时，各所述驱动放大器之间级联。
  5. 如权利要求1～3中任意一项所述的射频前端模块，其特征在于：
    所述功率放大器的数量大于一个时，各所述功率放大器之间并联。
  6. 如权利要求1所述的射频前端模块，其特征在于：
    所述功率放大器的输出端连接阻抗匹配网络；所述阻抗匹配网络中包括开关、电容和电感，所述开关跟随所述功率放大器的工作状态开闭，改变所述阻抗匹配网络的输出阻抗。
  7. 如权利要求1所述的射频前端模块，其特征在于：
    所述驱动放大器和所述功率放大器均具有独立控制的供电网络。
  8. 如权利要求7所述的射频前端模块，其特征在于：
    所述供电网络由第一旁路电容、第二旁路电容、第六旁路电容与第一开关组成；其中，第一旁路电容的一端接地，另一端连接电池电源；第二旁路电容的一端接地，另一端连接第一开关的公共端；第六旁路电容的一端接地，另一端连接供电电源；第一开关的另一端在两 个电源选项中切换，其中一个是电池电源，另一个是供电电源。
  9. 如权利要求7所述的射频前端模块，其特征在于：
    所述供电网络由第一旁路电容、第二旁路电容与第二开关组成；其中，第二旁路电容的一端连接第二开关的一端，另一端直接接地；第二开关的另一端一方面连接电池电源，另一方面连接第一旁路电容的一端，所述第一旁路电容的另一端直接接地。
  10. 如权利要求7所述的射频前端模块，其特征在于：
    所述供电网络由第三旁路电容、第四旁路电容与第三开关组成；其中，第三旁路电容的一端连接供电电源，另一端接地；第四旁路电容的一端连接供电电源，另一端连接所述第三开关后接地。
  11. 如权利要求8～10中任意一项所述的射频前端模块，其特征在于：
    所述开关由LDO电路替代。
  12. 如权利要求7～10中任意一项所述的射频前端模块，其特征在于：
    所述供电网络串联过流保护电路和过压保护电路。
  13. 如权利要求1～3中任意一项所述的射频前端模块，其特征在于：
    所述功率放大器的输入端设置功率分配器，输出端设置功率合成器；
    所述功率分配器为90度功率分配器、Wilkerson功率分配器、transformer功率分配器或180度功率分配器中的任意一种；
    所述功率合成器为90度功率合成器、Wilkerson功率合成器、transformer功率合成器或180度功率合成器中的任意一种。
  14. 如权利要求13所述的射频前端模块，其特征在于：
    所述功率分配器由耦合器替代。
  15. 一种多模多频射频前端系统，其特征在于包括电池电源、电源管理芯片和N个权利要求1～14中任意一项所述的射频前端模块，各所述射频前端模块并联；
    所述电池电源向所述电源管理芯片供电，所述电源管理芯片提供相应的供电电源；所述电池电源和所述供电电源分别向各个射频前端 模块供电；其中，N为正整数。
  16. 一种集成电路芯片，其特征在于包括权利要求1～14中任意一项所述的射频前端模块。
  17. 一种电子设备，其特征在于包括权利要求1～14中任意一项所述的射频前端模块。
PCT/CN2022/107712 2022-01-28 2022-07-25 射频前端模块及相应的射频前端系统、芯片及电子设备 Ceased WO2023142407A1 (zh)

Priority Applications (4)

Application Number Priority Date Filing Date Title
KR1020247000278A KR102896041B1 (ko) 2022-01-28 2022-07-25 Rf 프론트 엔드 모듈 및 대응하는 rf 프론트 엔드 시스템, 칩 및 전자 장치
JP2024505298A JP2025504729A (ja) 2022-01-28 2022-07-25 Ｒｆフロントエンド・モジュール及び対応するｒｆフロントエンド・システム、チップおよび電子機器
EP22923214.5A EP4472072A4 (en) 2022-01-28 2022-07-25 Front-end radio frequency module and corresponding front-end radio frequency system, chip and electronic device
US18/409,789 US20240146260A1 (en) 2022-01-28 2024-01-11 Radio frequency front-end module and corresponding radio frequency front-end system, chip and electronic device

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
CN202210108878.1 2022-01-28
CN202210108878 2022-01-28
CN202210203460.9A CN114337567B (zh) 2022-03-03 2022-03-03 射频前端模块及相应的射频前端系统、芯片及电子设备
CN202210203460.9 2022-03-03

Related Child Applications (1)

Application Number Title Priority Date Filing Date
US18/409,789 Continuation US20240146260A1 (en) 2022-01-28 2024-01-11 Radio frequency front-end module and corresponding radio frequency front-end system, chip and electronic device

Publications (1)

Publication Number Publication Date
WO2023142407A1 true WO2023142407A1 (zh) 2023-08-03

Family

ID=87470302

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/CN2022/107712 Ceased WO2023142407A1 (zh) 2022-01-28 2022-07-25 射频前端模块及相应的射频前端系统、芯片及电子设备

Country Status (5)

Country Link
US (1) US20240146260A1 (zh)
EP (1) EP4472072A4 (zh)
JP (1) JP2025504729A (zh)
KR (1) KR102896041B1 (zh)
WO (1) WO2023142407A1 (zh)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20230370027A1 (en) * 2022-05-11 2023-11-16 Skyworks Solutions, Inc. Power amplifier system with adjustable signal path for multiple-modes
US12597958B2 (en) * 2022-09-20 2026-04-07 Skyworks Solutions, Inc. RF front-end architecture
WO2025183388A1 (ko) * 2024-02-28 2025-09-04 삼성전자주식회사 무선 주파수 프론트 엔드 모듈 및 이를 포함하는 전자 장치
CN119834742B (zh) * 2024-11-15 2025-11-14 锐石创芯(重庆)科技股份有限公司 功率放大器、功率放大装置、射频前端模组及电子设备

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20170353163A1 (en) * 2016-06-01 2017-12-07 Intel IP Corporation Methods and devices for predistortion of signals
CN108259009A (zh) * 2018-04-03 2018-07-06 杭州臻镭微波技术有限公司 一种多级高效功率放大器
CN110941321A (zh) * 2019-11-22 2020-03-31 北京小米移动软件有限公司 电子设备的供电方法、装置及智能设备
US20210014797A1 (en) * 2018-04-09 2021-01-14 Lg Electronics Inc. Mobile terminal performing power control
CN112436861A (zh) * 2020-11-24 2021-03-02 维沃移动通信有限公司 射频电路、电子设备及控制方法
CN114337567A (zh) * 2022-03-03 2022-04-12 唯捷创芯(天津)电子技术股份有限公司 射频前端模块及相应的射频前端系统、芯片及电子设备

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6157258A (en) * 1999-03-17 2000-12-05 Ameritherm, Inc. High frequency power amplifier
US7336127B2 (en) * 2005-06-10 2008-02-26 Rf Micro Devices, Inc. Doherty amplifier configuration for a collector controlled power amplifier
US8718582B2 (en) * 2008-02-08 2014-05-06 Qualcomm Incorporated Multi-mode power amplifiers
EP2288021A1 (en) * 2009-08-20 2011-02-23 Alcatel Lucent Amplifier and method for amplification of an RF signal
US9007126B2 (en) * 2013-02-25 2015-04-14 Intel Mobile Communications GmbH Multi-mode amplifier system
US11258409B2 (en) * 2020-07-15 2022-02-22 Qualcomm Incorporated High voltage switch with fast turn-off

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20170353163A1 (en) * 2016-06-01 2017-12-07 Intel IP Corporation Methods and devices for predistortion of signals
CN108259009A (zh) * 2018-04-03 2018-07-06 杭州臻镭微波技术有限公司 一种多级高效功率放大器
US20210014797A1 (en) * 2018-04-09 2021-01-14 Lg Electronics Inc. Mobile terminal performing power control
CN110941321A (zh) * 2019-11-22 2020-03-31 北京小米移动软件有限公司 电子设备的供电方法、装置及智能设备
CN112436861A (zh) * 2020-11-24 2021-03-02 维沃移动通信有限公司 射频电路、电子设备及控制方法
CN114337567A (zh) * 2022-03-03 2022-04-12 唯捷创芯(天津)电子技术股份有限公司 射频前端模块及相应的射频前端系统、芯片及电子设备

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
See also references of EP4472072A4 *

Also Published As

Publication number Publication date
KR102896041B1 (ko) 2025-12-04
EP4472072A4 (en) 2026-03-11
JP2025504729A (ja) 2025-02-19
US20240146260A1 (en) 2024-05-02
EP4472072A1 (en) 2024-12-04
KR20240017914A (ko) 2024-02-08

Similar Documents

Publication Publication Date Title
KR102896041B1 (ko) Rf 프론트 엔드 모듈 및 대응하는 rf 프론트 엔드 시스템, 칩 및 전자 장치
US8253485B2 (en) Power amplifier
US7358806B2 (en) Method and apparatus for an improved power amplifier
CN101588159B (zh) 射频(rf)功率放大器和rf功率放大器装置
US7420412B2 (en) Multiple power mode amplifier with bias modulation option and without bypass switches
US7242245B2 (en) Method and apparatus for an improved power amplifier
Fowler et al. Efficiency improvement techniques at low power levels for linear CDMA and WCDMA power amplifiers
CN105490648B (zh) 一种多模功率放大器及其移动终端
CN114024507B (zh) 功率放大电路、射频前端电路、电子设备及信号放大方法
US8947165B2 (en) Multi-mode Doherty power amplifier
US7135919B2 (en) Power amplifier with switchable load
US7332960B2 (en) Method and apparatus for an improved power amplifier
CN114337567B (zh) 射频前端模块及相应的射频前端系统、芯片及电子设备
JP5313970B2 (ja) 高周波電力増幅器
US7268616B2 (en) Method and apparatus for an improved power amplifier
US7248109B2 (en) Method and apparatus for an improved power amplifier
EP1229642A1 (en) Power amplifier circuit for amplifying RF-Signals
US7999613B2 (en) Method and apparatus for an improved power amplifier
US11533022B2 (en) Power amplification apparatus
Xing et al. A Design of Power Amplifier With Digitally Gate Bias Control for Dual-Band Dual-Power-Mode Operations in 65-nm CMOS Technology
KR100569241B1 (ko) 임피던스 변환 회로 및 이를 이용한 전력 증폭기
EP1854208A2 (en) Method and apparatus for an improved power amplifier
EP1854209A2 (en) Method and apparatus for an improved power amplifier

Legal Events

Date Code Title Description
121 Ep: the epo has been informed by wipo that ep was designated in this application

Ref document number: 22923214

Country of ref document: EP

Kind code of ref document: A1

ENP Entry into the national phase

Ref document number: 20247000278

Country of ref document: KR

Kind code of ref document: A

WWE Wipo information: entry into national phase

Ref document number: 1020247000278

Country of ref document: KR

WWE Wipo information: entry into national phase

Ref document number: 2024505298

Country of ref document: JP

NENP Non-entry into the national phase

Ref country code: DE

ENP Entry into the national phase

Ref document number: 2022923214

Country of ref document: EP

Effective date: 20240828