WO2023155131A1 - 一种体声波谐振器、声学滤波器及电子设备 - Google Patents

一种体声波谐振器、声学滤波器及电子设备 Download PDF

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Publication number
WO2023155131A1
WO2023155131A1 PCT/CN2022/076829 CN2022076829W WO2023155131A1 WO 2023155131 A1 WO2023155131 A1 WO 2023155131A1 CN 2022076829 W CN2022076829 W CN 2022076829W WO 2023155131 A1 WO2023155131 A1 WO 2023155131A1
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WIPO (PCT)
Prior art keywords
electrode fingers
acoustic wave
dielectric layer
bulk acoustic
wave resonator
Prior art date
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Ceased
Application number
PCT/CN2022/076829
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English (en)
French (fr)
Inventor
张本锋
黄裕霖
李昕熠
高宗智
侯航天
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Huawei Technologies Co Ltd
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Huawei Technologies Co Ltd
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Filing date
Publication date
Application filed by Huawei Technologies Co Ltd filed Critical Huawei Technologies Co Ltd
Priority to PCT/CN2022/076829 priority Critical patent/WO2023155131A1/zh
Priority to EP22926462.7A priority patent/EP4468601A4/en
Priority to CN202280006025.5A priority patent/CN116918254A/zh
Publication of WO2023155131A1 publication Critical patent/WO2023155131A1/zh
Priority to US18/805,930 priority patent/US20240405745A1/en
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

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    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic elements; Electromechanical resonators
    • H03H9/15—Constructional features of resonators consisting of piezoelectric or electrostrictive material
    • H03H9/17—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator
    • H03H9/171—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator implemented with thin-film techniques, i.e. of the film bulk acoustic resonator [FBAR] type
    • H03H9/172—Means for mounting on a substrate, i.e. means constituting the material interface confining the waves to a volume
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic elements; Electromechanical resonators
    • H03H9/02—Details
    • H03H9/02228—Guided bulk acoustic wave devices or Lamb wave devices having interdigital transducers situated in parallel planes on either side of a piezoelectric layer
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic elements; Electromechanical resonators
    • H03H9/02—Details
    • H03H9/02007—Details of bulk acoustic wave devices
    • H03H9/02157—Dimensional parameters, e.g. ratio between two dimension parameters, length, width or thickness
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic elements; Electromechanical resonators
    • H03H9/02—Details
    • H03H9/125—Driving means, e.g. electrodes, coils
    • H03H9/13—Driving means, e.g. electrodes, coils for networks consisting of piezoelectric or electrostrictive materials
    • H03H9/132—Driving means, e.g. electrodes, coils for networks consisting of piezoelectric or electrostrictive materials characterized by a particular shape
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic elements; Electromechanical resonators
    • H03H9/46—Filters
    • H03H9/54—Filters comprising resonators of piezoelectric or electrostrictive material
    • H03H9/56—Monolithic crystal filters
    • H03H9/566—Electric coupling means therefor
    • H03H9/568—Electric coupling means therefor consisting of a ladder configuration
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic elements; Electromechanical resonators
    • H03H9/02—Details
    • H03H9/02007—Details of bulk acoustic wave devices
    • H03H9/02086—Means for compensation or elimination of undesirable effects
    • H03H9/02125—Means for compensation or elimination of undesirable effects of parasitic elements
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic elements; Electromechanical resonators
    • H03H9/15—Constructional features of resonators consisting of piezoelectric or electrostrictive material
    • H03H9/17—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator
    • H03H9/171—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator implemented with thin-film techniques, i.e. of the film bulk acoustic resonator [FBAR] type
    • H03H9/172—Means for mounting on a substrate, i.e. means constituting the material interface confining the waves to a volume
    • H03H9/173—Air-gaps
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic elements; Electromechanical resonators
    • H03H9/15—Constructional features of resonators consisting of piezoelectric or electrostrictive material
    • H03H9/17—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator
    • H03H9/171—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator implemented with thin-film techniques, i.e. of the film bulk acoustic resonator [FBAR] type
    • H03H9/172—Means for mounting on a substrate, i.e. means constituting the material interface confining the waves to a volume
    • H03H9/175—Acoustic mirrors

Definitions

  • the present application relates to the technical field of semiconductors, in particular to a bulk acoustic wave resonator, an acoustic filter and electronic equipment.
  • the acoustic filter is an important part in the mobile communication system.
  • Embodiments of the present application provide a bulk acoustic wave resonator, an acoustic filter and electronic equipment, which can improve the performance of the acoustic filter.
  • a bulk acoustic wave resonator in the first aspect, includes a piezoelectric material layer, an interdigital transducer and a dielectric layer; wherein, the interdigital transducer is arranged on the piezoelectric material layer, and the interdigital transducer
  • the energy device includes a first bus bar and a second bus bar oppositely arranged, a plurality of first electrode fingers, and a plurality of second electrode fingers; the plurality of first electrode fingers are sequentially extended from the first bus bar along the extending direction of the first bus bar.
  • the bar protrudes toward the second bus bar; a plurality of second electrode fingers protrudes from the second bus bar to the first bus bar in sequence along the extending direction of the second bus bar; wherein, the plurality of first electrode fingers and the plurality of second electrode fingers
  • the first bus bar and the second bus bar are alternately arranged sequentially; the dielectric layer covers the piezoelectric material layer and the interdigital transducer, and the dielectric layer is located between at least one pair of adjacent first electrode fingers and second electrode fingers
  • the thickness of the part between them has ups and downs, and the part of the dielectric layer with ups and downs in thickness is used to suppress the excitation of high-order modes during sound wave propagation.
  • the thickness of the dielectric layer in the bulk acoustic wave resonator is located between at least one pair of adjacent first electrode fingers and second electrode fingers, the thickness of the part has ups and downs, so the sound wave is transmitted between the first electrode fingers and the second electrode fingers.
  • the thickness of the medium layer has ups and downs, which can destroy the periodicity of sound wave propagation and change the sound wave transmission characteristics, thereby suppressing the excitation of high-order modes during sound wave propagation.
  • the bulk acoustic wave can be resonated
  • the main mode of the filter is excited, the high-order spurious mode is suppressed, and the stray resonance is reduced or avoided, which is beneficial to improving the performance of the acoustic filter and is beneficial to the design of the acoustic filter.
  • the dielectric layer is located between at least one pair of adjacent first electrode fingers and second electrode fingers along the direction in which the plurality of first electrode fingers and the plurality of second electrode fingers are alternately arranged sequentially
  • the thickness of the part decreases first and then increases. Since the thickness of the part of the dielectric layer between at least one pair of adjacent first electrode fingers and second electrode fingers decreases first and then increases, the part of the dielectric layer whose thickness decreases first and then increases can destroy the periodicity of sound wave propagation , thereby suppressing the excitation of high-order modes during sound wave propagation, reducing or avoiding stray resonances, which in turn helps to improve the performance of the acoustic filter and is beneficial to the design of the acoustic filter.
  • the thickness of the part with ups and downs in the dielectric layer is distributed according to a certain law, the main mode electromechanical coupling coefficient of the bulk acoustic wave resonator can be improved, and the design difficulty of the dielectric layer can be simplified.
  • the variation law of the thickness of the dielectric layer can be selected as required, thereby improving the degree of freedom in the design of the dielectric layer.
  • the dielectric layer is located between at least one pair of adjacent first electrode fingers and second electrode fingers along the direction in which the plurality of first electrode fingers and the plurality of second electrode fingers are alternately arranged sequentially
  • the thickness of the part increases first and then decreases. Since the thickness of the part of the dielectric layer between at least one pair of adjacent first electrode fingers and second electrode fingers increases first and then decreases, the part of the dielectric layer whose thickness first increases and then decreases can destroy the sound wave propagation. Periodicity, thereby suppressing the excitation of high-order modes during sound wave propagation, reducing or avoiding stray resonances, which is conducive to improving the performance of the acoustic filter and is conducive to the design of the acoustic filter.
  • the thickness of the part of the dielectric layer with ups and downs is distributed according to a certain rule, the main mode electromechanical coupling coefficient of the bulk acoustic wave resonator can be improved, and the design difficulty of the dielectric layer can be simplified.
  • the variation law of the thickness of the dielectric layer can be selected as required, thereby improving the degree of freedom in the design of the dielectric layer.
  • the part of the dielectric layer located between at least one pair of adjacent first electrode fingers and second electrode fingers includes a plurality of first electrode fingers and a plurality of second electrode fingers that are sequentially staggered.
  • the direction of multiple regions arranged in sequence, the thickness of each region decreases first and then increases, or increases first and then decreases along the direction in which multiple first electrode fingers and multiple second electrode fingers are alternately arranged. Small.
  • the multiple regions The dielectric layer can destroy the periodicity of sound wave propagation, thereby suppressing the excitation of high-order modes during sound wave propagation, reducing or avoiding stray resonances, which is conducive to improving the performance of the acoustic filter and is conducive to the design of the acoustic filter.
  • the thickness of each region of the dielectric layer located between at least one pair of adjacent first electrode fingers and second electrode fingers is distributed according to a certain rule, the main mode of the bulk acoustic wave resonator can be improved.
  • the electromechanical coupling coefficient can simplify the design difficulty of the dielectric layer.
  • the variation law of the thickness of the dielectric layer can be selected as required, thereby improving the degree of freedom in the design of the dielectric layer.
  • the thickness of the dielectric layer varies regularly between the first pair of adjacent first electrode fingers and the second electrode fingers, and the dielectric layer is located between the second pair of adjacent first electrode fingers.
  • the part between the finger and the second electrode finger has a different thickness change rule. This can further destroy the periodicity of sound wave propagation, further suppress the excitation of high-order modes during sound wave propagation, and is more conducive to reducing or avoiding stray resonance.
  • the design freedom of the bulk acoustic wave resonator can be further enriched.
  • a first pair of adjacent first electrode fingers and second electrode fingers, and a second pair of adjacent first electrode fingers and second electrode fingers share a first electrode finger or a second electrode finger
  • the two electrode fingers, that is, the first pair of adjacent first electrode fingers and second electrode fingers are arranged adjacent to the second pair of adjacent first electrode fingers and second electrode fingers.
  • the bulk acoustic wave resonator further includes: a base, the base is disposed on a side of the piezoelectric material layer away from the interdigital transducer, and the base forms a ring shape.
  • the substrate can act as a support for supporting the piezoelectric material layer, the interdigital transducer and the dielectric layer.
  • a cavity structure can be formed. During the sound wave propagation, the cavity structure can concentrate energy in the piezoelectric material layer, thereby improving the quality factor of the bulk acoustic wave resonator.
  • providing a substrate in the bulk acoustic wave resonator can also achieve process compatibility, for example, the bonding of the acoustic filter and other electronic components such as integrated circuit devices can be realized through the substrate.
  • the bulk acoustic wave resonator further includes: a substrate and a reflective layer arranged in layers; the reflective layer is arranged between the substrate and the piezoelectric material layer; wherein the reflective layer includes a first acoustic impedance layer alternately arranged in layers layer and the second acoustic impedance layer; the acoustic impedance of the first acoustic impedance layer is different from the acoustic impedance of the second acoustic impedance layer.
  • the reflective layer can reflect the sound wave to the piezoelectric material layer, energy can be concentrated in the piezoelectric material layer during sound wave propagation, which can improve the quality factor of the bulk acoustic wave resonator.
  • the substrate in the bulk acoustic wave resonator is used to play its supporting role, and is used to support the reflective layer, piezoelectric material layer, interdigital transducer and dielectric layer.
  • the substrate in the bulk acoustic wave resonator can also achieve process compatibility, for example, the bonding of the acoustic filter and other electronic components such as IC devices can be realized through the substrate.
  • the material of the substrate includes one or more of silicon, silicon carbide, diamond, sapphire or aluminum nitride.
  • the material of the dielectric layer includes one or more of silicon oxide, silicon nitride, silicon oxynitride or aluminum oxide.
  • an acoustic filter in a second aspect, includes a plurality of cascaded bulk acoustic wave resonators; wherein, the bulk acoustic wave resonators are the bulk acoustic wave resonators provided in the first aspect. Since the acoustic filter has the same technical effect as the bulk acoustic wave resonator provided in the above first aspect, reference may be made to the relevant description of the above first aspect, and details are not repeated here.
  • an electronic device in a third aspect, includes an acoustic filter, a processor, and a printed circuit board, and the acoustic filter and the processor are all arranged on the printed circuit board; wherein, the acoustic filter provides the above-mentioned second aspect acoustic filter. Since the electronic device has the same technical effect as that of the bulk acoustic wave resonator provided in the first aspect above, reference may be made to the relevant description of the first aspect above, and details will not be repeated here.
  • FIG. 1 is a schematic structural diagram of an electronic device provided by an embodiment of the present application.
  • FIG. 2 is a schematic structural diagram of an acoustic filter provided by an embodiment of the present application.
  • Fig. 3a is a schematic structural diagram of a bulk acoustic wave resonator provided by an embodiment of the present application
  • Fig. 3b is a schematic cross-sectional view along AA direction in Fig. 3a;
  • FIG. 4 is a schematic structural diagram of an interdigital transducer provided by an embodiment of the present application.
  • Fig. 5a is a schematic structural diagram of a bulk acoustic wave resonator provided by another embodiment of the present application.
  • Fig. 5b is a schematic structural diagram of a bulk acoustic wave resonator provided by another embodiment of the present application.
  • FIG. 6 is a schematic structural diagram of a bulk acoustic wave resonator provided in the related art
  • FIG. 7 is an admittance curve diagram corresponding to the bulk acoustic wave resonator shown in FIG. 6;
  • FIG. 8 is an admittance curve corresponding to the bulk acoustic wave resonator shown in FIG. 3b;
  • FIG. 9 is a schematic structural diagram of a bulk acoustic wave resonator provided in another embodiment of the present application.
  • Fig. 10a is a schematic structural diagram of a bulk acoustic wave resonator provided in another embodiment of the present application.
  • Fig. 10b is a schematic structural diagram of a bulk acoustic wave resonator provided by another embodiment of the present application.
  • Fig. 11a is a schematic structural diagram of a bulk acoustic wave resonator provided by another embodiment of the present application.
  • Fig. 11b is a schematic structural diagram of a bulk acoustic wave resonator provided by another embodiment of the present application.
  • Fig. 12 is a schematic structural diagram of a bulk acoustic wave resonator provided by another embodiment of the present application.
  • Fig. 13 is a schematic structural diagram of a bulk acoustic wave resonator provided in another embodiment of the present application.
  • Fig. 14 is a schematic structural diagram of a bulk acoustic wave resonator provided in another embodiment of the present application.
  • Fig. 15 is a schematic structural diagram of a bulk acoustic wave resonator provided in another embodiment of the present application.
  • Fig. 16 is a schematic structural diagram of a substrate provided by an embodiment of the present application.
  • FIG. 17 is a schematic structural diagram of a bulk acoustic wave resonator provided by another embodiment of the present application.
  • first, second and the like are used for convenience of description only, and cannot be understood as indicating or implying relative importance or implicitly specifying the quantity of indicated technical features.
  • a feature defined as “first”, “second”, etc. may expressly or implicitly include one or more of that feature.
  • plural means two or more.
  • words such as “exemplary” or “for example” are used as examples, illustrations or illustrations. Any embodiment or design scheme described as “exemplary” or “for example” in the embodiments of the present application shall not be interpreted as being more preferred or more advantageous than other embodiments or design schemes. Rather, the use of words such as “exemplary” or “such as” is intended to present related concepts in a concrete manner.
  • Embodiments of the present application provide an electronic device, which can be, for example, a mobile phone, a tablet computer (pad), a personal digital assistant (personal digital assistant, PDA), a TV, a smart wearable product (for example, a smart watch) , smart bracelet), virtual reality (virtual reality, VR) terminal equipment, augmented reality (augmented reality, AR) terminal equipment, charging small household appliances (such as soybean milk machine, sweeping robot), drones, radar, aerospace equipment
  • a mobile phone a tablet computer (pad), a personal digital assistant (personal digital assistant, PDA), a TV, a smart wearable product (for example, a smart watch) , smart bracelet), virtual reality (virtual reality, VR) terminal equipment, augmented reality (augmented reality, AR) terminal equipment, charging small household appliances (such as soybean milk machine, sweeping robot), drones, radar, aerospace equipment
  • VR virtual reality
  • AR augmented reality
  • radar aerospace equipment
  • the embodiment of the present application does not specifically limit the specific form of the electronic equipment.
  • the electronic device 1 mainly includes a cover plate 11 , a display screen 12 , a middle frame 13 and a rear case 14 .
  • the rear case 14 and the display screen 12 are respectively located on both sides of the middle frame 13, and the middle frame 13 and the display screen 12 are arranged in the rear case 14, and the cover plate 11 is arranged on the side of the display screen 12 away from the middle frame 13, and the display screen 12
  • the display surface faces the cover plate 11 .
  • the above-mentioned display screen 12 can be a liquid crystal display (liquid crystal display, LCD), in this case, the liquid crystal display includes a liquid crystal display panel and a backlight module, the liquid crystal display panel is arranged between the cover plate 11 and the backlight module, and the backlight The module is used to provide light source for the liquid crystal display panel.
  • the above display screen 12 may also be an organic light emitting diode (OLED) display screen. Since the OLED display is a self-luminous display, there is no need to set a backlight module.
  • OLED organic light emitting diode
  • the above-mentioned middle frame 13 includes a supporting board 131 and a frame 132 surrounding the supporting board 131 .
  • the above-mentioned electronic device 1 may also include printed circuit boards (printed circuit boards, PCB), batteries, cameras and other electronic components, and the printed circuit boards, batteries, cameras and other electronic components may be arranged on the carrier board 131.
  • the above-mentioned electronic device 1 may also include system-on-chip (system on chip, SOC), radio frequency chip, etc. arranged on the PCB, and the PCB is used to carry the system-level chip, radio frequency chip, etc., and is electrically connected to the system-level chip, radio frequency chip, etc. .
  • the radio frequency chip may include acoustic filters, processors and other parts.
  • the processor is used to process various signals, and the acoustic filter is an important part of radio frequency signal processing, which is used to pass signals of specific frequencies and block signals of other frequencies.
  • the embodiment of the present application provides an acoustic filter, which can be applied to the above-mentioned electronic device 1, for example, in the radio frequency chip in the electronic device 1.
  • the acoustic filter provided in the embodiment of the present application can be, for example, Low-pass acoustic filter, high-pass acoustic filter, band-pass acoustic filter, band-stop acoustic filter or active acoustic filter, etc.
  • the Ladder-type acoustic filter is a topology commonly used in current acoustic filters.
  • the acoustic filter provided by the embodiment of the present application is a Ladder-type acoustic filter.
  • the acoustic filter 10 provided by the embodiment of the present application includes A plurality of cascaded bulk acoustic wave (bulk acoustic wave, BAW) resonators 100 may have different resonant frequencies, and may be cascaded together in a series-parallel manner.
  • BAW bulk acoustic wave
  • FIG. 2 when multiple bulk acoustic wave resonators 100 are cascaded together in series and parallel, FIG. 2 also shows the signal input terminal Vin, the signal output terminal Vout and the ground terminal GND of the acoustic filter 10 .
  • the acoustic filter composed of cascaded series and parallel resonators with different resonant frequencies has the advantages of small passband insertion loss, high out-of-band steepness, and strong power tolerance.
  • the embodiment of the present application also provides a bulk acoustic wave resonator.
  • the bulk acoustic wave resonator 100 can be applied to the above-mentioned acoustic filter 10 .
  • the structure of the bulk acoustic wave resonator 100 will be illustrated through several embodiments below.
  • the BAW resonator 100 includes: a piezoelectric material layer 101 , an interdigital transducer (interdigital transducer, IDT) 102 and a dielectric layer 103 .
  • IDT interdigital transducer
  • FIG. 3 a is a schematic top view of the bulk acoustic wave resonator 100
  • FIG. 3 b is a schematic cross-sectional view along the AA direction in FIG. 3 a .
  • the material of the piezoelectric material layer 101 may include, for example, one or more of LiNbO 3 (lithium niobate), LiTaO 3 (lithium tantalate), and the like.
  • the role of the piezoelectric material layer 101 is to generate an inverse piezoelectric effect by converting electrical energy into mechanical energy in the form of sound waves.
  • the resonator provided in the embodiment of the present application is a bulk acoustic wave resonator, for a bulk acoustic wave resonator, the acoustic wave mainly propagates in the piezoelectric material layer 101, and with respect to a surface acoustic wave (surface acoustic wave, SAW) resonator, the bulk acoustic wave resonates
  • the thickness of the piezoelectric material layer 101 in the device is small.
  • the thickness of the piezoelectric material layer 101 can be (0, 2] ⁇ m, for example, that is, the thickness of the piezoelectric material layer 101 is greater than zero and less than or equal to 2 ⁇ m.
  • interdigital transducer 102 is arranged on the piezoelectric material layer 101, as shown in Fig. 4, interdigital transducer 102 comprises the first busbar (busbar) 1021a and the second busbar that are oppositely arranged 1022a, a plurality of first electrode fingers (IDT electrode) 1021b, and a plurality of second electrode fingers 1022b; the plurality of first electrode fingers 1021b flow from the first bus bar 1021a to the second bus bar in sequence along the extending direction of the first bus bar 1021a
  • the bar 1022a protrudes; a plurality of second electrode fingers 1022b protrude from the second bus bar 1022a to the first bus bar 1021a along the extending direction of the second bus bar 1022a; wherein, the plurality of first electrode fingers 1021b and the plurality of second electrodes
  • the fingers 1022b are alternately arranged sequentially between the first bus bars 1021a and the second bus bars 1022a, and there is no
  • first electrode fingers 1021b and a plurality of second electrode fingers 1022b are alternately arranged sequentially between the first bus bar 1021a and the second bus bar 1022a" refers to: the first bus bar 1021a and the second bus bar 1021a Between the bars 1022a, a first electrode finger 1021b, a second electrode finger 1022b, a first electrode finger 1021b, a second electrode finger 1022b, a first electrode finger 1021b, a second electrode finger 1022b, etc. are arranged in sequence .
  • the number of the first electrode fingers 1021b and the number of the second electrode fingers 1022b in the IDT 102 are not limited, and can be set as required.
  • the plurality of first electrode fingers 1021b may be arranged at equal intervals, or may be arranged at unequal intervals.
  • the plurality of second electrode fingers 1022b may be arranged at equal intervals, or may be arranged at unequal intervals.
  • the arrangement of the plurality of first electrode fingers 1021b at unequal intervals means that the distance between at least one pair of adjacent first electrode fingers 1021b is the same as that of another pair of adjacent first electrode fingers 1021b. The spacing between 1021b is not the same.
  • the plurality of first electrode fingers 1021b and the plurality of second electrode fingers 1022b are alternately arranged sequentially, and the distances between adjacent first electrode fingers 1021b and second electrode fingers 1022b may be the same;
  • the distances between adjacent first electrode fingers 1021b and second electrode fingers 1022b are not completely the same, that is, the distance between at least one pair of adjacent first electrode fingers 1021b and second electrode fingers 1022b is the same as that of another pair of adjacent The distances between the first electrode fingers 1021b and the second electrode fingers 1022b are different.
  • first bus bar 1021a, the first electrode fingers 1021b, the second bus bar 1022a and the second electrode fingers 1022b can be fabricated at the same time; the first bus bar 1021a and the first electrode fingers 1021b can also be fabricated first, and then The second bus bar 1022a and the second electrode finger 1022b; or, the second bus bar 1022a and the second electrode finger 1022b are fabricated first, and then the first bus bar 1021a and the first electrode finger 1021b are fabricated.
  • the material of the IDT 102 may be, for example, one or more of Al (aluminum), Mo (molybdenum), W (tungsten), Ru (ruthenium), Cu (copper) and Pt (platinum).
  • the dielectric layer 103 covers the piezoelectric material layer 101 and the interdigital transducer 102, and the dielectric layer 103 is located between at least one pair of adjacent first electrode fingers 1021b and second electrode fingers 1022b.
  • the thickness has ups and downs, and the portion of the dielectric layer 103 with ups and downs in thickness is used to suppress the excitation of high-order modes during sound wave propagation.
  • the dielectric layer 103 is located between a pair of adjacent first electrode fingers 1021 b and second electrode fingers 1022 b , and the portion with a thickness that has ups and downs is indicated by 1031 .
  • the material of the dielectric layer 103 may include, for example, one or more of silicon oxide (SiOx), silicon nitride (SiNx), silicon oxynitride (SiOxNy) or aluminum oxide (Al 2 O 3 ).
  • the thickness of the dielectric layer 103 between a pair of adjacent first electrode fingers 1021b and second electrode fingers 1022b may have ups and downs; it may also be multiple pairs of adjacent first electrode fingers 1021b and second electrode fingers 1021b.
  • the thickness of the dielectric layer 103 between the two electrode fingers 1022b has ups and downs.
  • the thickness of the part of the dielectric layer 103 between the pair of adjacent first electrode fingers 1021b and the second electrode fingers 1022b has ups and downs
  • the portion located between the pair of adjacent first electrode fingers 1021b and the second electrode fingers 1022b has ups and downs.
  • the entire thickness of the dielectric layer 103 between the second electrode fingers 1022b has ups and downs; it can also be considered as the thickness of the part of the dielectric layer 103 between a pair of adjacent first electrode fingers 1021b and second electrode fingers 1022b
  • There are ups and downs, and the thickness of the part does not change.
  • the thickness of the part of the dielectric layer 103 located between a pair of adjacent first electrode fingers 1021b and the second electrode fingers 1022b has ups and downs, and the part with ups and downs can be continuous as a whole or include discontinuities multiple subsections of .
  • the dielectric layer 103 includes not only the portion between the adjacent first electrode fingers 1021b and the second electrode fingers 1022b, but also the portion above the first electrode fingers 1021b or the second electrode fingers 1022b.
  • the part of the dielectric layer 103 located above the first electrode finger 1021b or the second electrode finger 1022b is indicated by 1032, and the part 1032 located above the first electrode finger 1021b or the second electrode finger 1022b is the same as the first electrode finger 1021b or The second electrode fingers 1022b overlap in a direction perpendicular to the piezoelectric material layer 101 .
  • the thickness of the part 1032 above the first electrode finger 1021b or the second electrode finger 1022b can be completely the same, that is, the thickness has no ups and downs; it can also be the part above the first electrode finger 1021b or the second electrode finger 1022b
  • the thickness of portion 1032 has ups and downs. It should be understood that, in some examples, as shown in FIG. 5 a , the thickness of the portion of the dielectric layer 103 between each pair of adjacent first electrode fingers 1021 b and second electrode fingers 1022 b has ups and downs. In some other examples, as shown in FIG.
  • the thickness of the portion of the dielectric layer 103 between at least one pair of adjacent first electrode fingers 1021b and the second electrode finger 1022b has ups and downs, and the dielectric layer 103 is located in at least one
  • the thickness of the portion between adjacent first electrode fingers 1021b and second electrode fingers 1022b has no ups and downs, that is, the dielectric layer 103 is located between at least one pair of adjacent first electrode fingers 1021b and second electrode fingers 1022b
  • the thickness of the sections is the same.
  • the dielectric layer 103 is located between a pair of adjacent first electrode fingers 1021 b and second electrode fingers 1022 b , and the portion with no ups and downs in thickness is indicated by 1033 .
  • the thickness of the dielectric layer 103 between a pair of adjacent first electrode fingers 1021b and second electrode fingers 1022b may have no ups and downs; it may also be multiple pairs of adjacent first electrode fingers 1021b and second electrodes
  • the thickness of the dielectric layer 103 between the fingers 1022b has no ups and downs.
  • N77 and N79 have the characteristics of high operating frequency and large bandwidth, especially the N77 frequency band, which has a working frequency band of 3300MHz to 4200MHz and a bandwidth ratio of 24%.
  • the current frequency band filter below 3GHz mainly uses surface acoustic wave (surface acoustic wave, SAW) resonators, thin-film Bulk acoustic resonator (film bulk acoustic resonator, FBAR), or solidly mounted bulk acoustic resonator (solidly mounted resonator, SMR) cascaded Ladder topology.
  • SAW surface acoustic wave
  • FBAR film bulk acoustic resonator
  • SMR solidly mounted bulk acoustic resonator
  • the bulk acoustic wave resonator provided in the embodiment of the present application is an excited film bulk acoustic resonator (XBAR).
  • the bulk acoustic wave resonator provided in the embodiment of the present application excites AlLamb( Lamb) waves, so that the bulk acoustic wave resonator 100 can have an electromechanical coupling coefficient of 25%, so it can meet the requirements of the N77 frequency band.
  • Fig. 6 is a kind of XBAR resonator that the related art provides, as shown in Fig. 6, this XBAR resonator comprises piezoelectric material layer 101, interdigital transducer 102 and dielectric layer 103, and interdigital transducer 102 is arranged on the pressure On the electrical material layer 101, the structure of the interdigital transducer 102 can refer to the above, and will not be repeated here.
  • the dielectric layer 103 covers the interdigital transducer 102 and is located adjacent to the first electrode finger 1021b and the second electrode finger 1022b.
  • the thickness of the dielectric layer 103 in between has no ups and downs, that is, the thickness is the same.
  • the bulk acoustic wave resonator 100 provided in Fig. 6 excites the Al Lamb wave on the piezoelectric material layer 101, although the bulk acoustic wave resonator 100 can have an electromechanical coupling coefficient of 25%, which can meet the requirements of the N77 frequency band, but the bulk acoustic wave resonator 100 provided in Fig. 6 Due to the presence of other bulk wave modes and A1 high-order modes in the acoustic wave resonator 100 , the spurious modes are serious, which seriously restricts the design and performance of the acoustic filter 10 .
  • a vector network analyzer is often used to test the admittance (admittance) curve of the bulk acoustic wave resonator 100, and the admittance curve can be used to characterize the bulk acoustic wave resonator 100.
  • Various indicators are used.
  • FIG. 7 is an admittance curve corresponding to the bulk acoustic wave resonator 100 shown in FIG. 6 , where the abscissa in FIG. 7 represents frequency, and the ordinate represents admittance.
  • the resonance frequency and the antiresonance frequency of the bulk acoustic wave resonator 100 are 3960 MHz and 4940 MHz, respectively.
  • the bulk acoustic wave resonator 100 also has other stray resonances. For example, there are stray resonances at a frequency of 5160 MHz.
  • FIG. 7 also shows the main mode and stray resonances.
  • the displacement field distribution diagram corresponding to the mode it can be seen from the displacement field distribution diagram that the main mode is the A1Lamb mode, that is, the low-order mode.
  • the spurious mode at the frequency of 5160 MHz in Fig. The high-order mode formed between the two electrode fingers 1022b is caused, and the stray resonance will seriously affect the performance of the acoustic filter 10 and restrict the design of the acoustic filter 10 .
  • the region of constant transmission characteristic between 1022b is excited when the high-order resonance condition is satisfied.
  • the thickness of the part of the dielectric layer 103 in the bulk acoustic wave resonator 100 located between at least one pair of adjacent first electrode fingers 1021b and second electrode fingers 1022b has ups and downs, the sound wave When propagating between the first electrode fingers 1021b and the second electrode fingers 1022b, the part of the dielectric layer 103 with ups and downs in thickness can destroy the periodicity of propagation and change the transmission characteristics of the acoustic wave, thereby suppressing the excitation of high-order modes during acoustic wave propagation.
  • the main mode of the bulk acoustic wave resonator 100 can be excited, the high-order spurious mode can be suppressed, and the stray resonance can be reduced or avoided, which is conducive to improving the performance of the acoustic filter 10, and is beneficial to the acoustic filter. 10 designs.
  • FIG. 8 is an admittance curve corresponding to the bulk acoustic wave resonator 100 provided in FIG. 3 b in the embodiment of the present application.
  • the abscissa represents the frequency
  • the ordinate represents the admittance.
  • the resonant frequency and the antiresonant frequency of the BAW resonator 100 are 3960 MHz and 4940 MHz, respectively. Comparing Figure 7 and Figure 8, it can be seen that the admittance curve shown in Figure 8 has no other stray resonances except the main mode.
  • Fig. 8 also schematically shows the main mode and the distribution diagram of the displacement field corresponding to the spurious resonance frequency point in Fig. 7. It can be seen from the distribution diagram of the displacement field in Fig. 8 that in the BAW resonator 100 provided in Fig. 3b only There are main modes excited and higher order spurious modes suppressed.
  • the dielectric layer 103 is located at least The thickness of the portion between a pair of adjacent first electrode fingers 1021b and second electrode fingers 1022b may be distributed according to a certain variation law, or may be irregularly distributed. In the case that the thickness of the portion of the dielectric layer 103 located between at least one pair of adjacent first electrode fingers 1021b and second electrode fingers 1022b is distributed according to a certain variation rule, several implementation manners are exemplarily provided below.
  • the first implementation mode as shown in FIG. 3b, along the direction in which multiple first electrode fingers 1021b and multiple second electrode fingers 1022b are alternately arranged sequentially, the dielectric layer 103 is located on at least one pair of adjacent first electrode fingers 1021b The thickness of the portion between the second electrode finger 1022b decreases first and then increases.
  • the second implementation mode as shown in FIG. 9 , along the direction in which multiple first electrode fingers 1021b and multiple second electrode fingers 1022b are alternately arranged sequentially, the dielectric layer 103 is located on at least one pair of adjacent first electrode fingers 1021b The thickness of the portion between the second electrode finger 1022b first increases and then decreases.
  • the part of the dielectric layer 103 located between at least one pair of adjacent first electrode fingers 1021b and second electrode fingers 1022b includes a plurality of first electrode fingers 1021b and a plurality of second electrode fingers
  • the direction in which the two electrode fingers 1022b are arranged alternately in sequence, the plurality of regions 1031a arranged in sequence, the thickness of each region 1031a is along the direction in which the plurality of first electrode fingers 1021b and the plurality of second electrode fingers 1022b are arranged alternately in sequence, first subtract After small increase.
  • the part of the dielectric layer 103 between at least one pair of adjacent first electrode fingers 1021b and second electrode fingers 1022b includes a plurality of first electrode fingers 1021b and a plurality of second electrode fingers
  • the direction in which the two electrode fingers 1022b are arranged alternately in sequence, the plurality of regions 1031a arranged in sequence, the thickness of each region 1031a increases first along the direction in which the plurality of first electrode fingers 1021b and the plurality of second electrode fingers 1022b are arranged alternately in sequence. Larger and then smaller.
  • the part of the dielectric layer 103 located between at least one pair of adjacent first electrode fingers 1021b and second electrode fingers 1022b includes the number of regions 1031a that can be set as required .
  • Fig. 10a and Fig. 10b are illustrated by taking an example that the part of the dielectric layer 103 between at least one pair of adjacent first electrode fingers 1021b and second electrode fingers 1022b includes two regions 1031a.
  • the part of the dielectric layer 103 with ups and downs in thickness away from the surface of the piezoelectric material layer 101 may be composed of multiple planes; It can also be composed of multiple arc surfaces; of course, it can also be composed of at least one plane and at least one arc surface.
  • the part of the dielectric layer 103 with ups and downs in thickness in FIG. 3b is composed of multiple planes away from the surface of the piezoelectric material layer 101;
  • the surface of the piezoelectric material layer 101 is composed of multiple arc surfaces; in FIG. 11 b , the part of the dielectric layer 103 with ups and downs in thickness is composed of at least one plane and at least one arc surface away from the surface of the piezoelectric material layer 101 .
  • the portion of the dielectric layer 103 with a thickness with ups and downs includes a curved surface away from the surface of the piezoelectric material layer 101
  • the curved surface can be convex in a direction away from the piezoelectric material layer 101, or can be close to the piezoelectric material layer 101.
  • the direction of the material layer 101 is concave.
  • FIG. 11 a and FIG. 11 b take an example in which the arc surface is concave in a direction close to the piezoelectric material layer 101 for illustration.
  • the thickness change law of the part of the dielectric layer 103 located between at least one pair of adjacent first electrode fingers 1021b and second electrode fingers 1022b adopts the above-mentioned first, second, third or fourth implementation methods Since the thickness of the part of the dielectric layer 103 between at least one pair of adjacent first electrode fingers 1021b and second electrode fingers 1022b has ups and downs, the part of the dielectric layer 103 whose thickness changes can destroy the periodicity of sound wave propagation , thereby suppressing the excitation of high-order modes during sound wave propagation, reducing or avoiding stray resonances, which is beneficial to improving the performance of the acoustic filter 10 and is beneficial to the design of the acoustic filter 10 .
  • the thickness of the portion whose thickness changes in the dielectric layer 103 is distributed according to a certain rule, the main mode electromechanical coupling coefficient of the bulk acoustic wave resonator 100 can be improved, and the design difficulty of the dielectric layer 103 can be simplified.
  • the first, second, third or fourth implementation manner can be selected according to needs, so that the degree of freedom in the design of the dielectric layer 103 can be improved.
  • the thickness of the portion of the dielectric layer 103 between multiple pairs of adjacent first electrode fingers 1021b and second electrode fingers 1022b has ups and downs
  • multiple pairs of adjacent first electrode fingers 1021b and The thickness variation law of the dielectric layer 103 between the second electrode fingers 1022b is the same.
  • the change rule is the same as the change rule of the thickness of the part 1031' of the dielectric layer 103 located between the adjacent first electrode finger 1021b' and the second electrode finger 1022b.
  • the dielectric layer 103 is located between the adjacent first electrode finger 1021b' and the second electrode finger 1022b
  • the variation law of the thickness of the portion 1031 between the two electrode fingers 1022b and the thickness variation law of the portion 1031′ of the dielectric layer 103 located between the adjacent first electrode fingers 1021b′ and the second electrode fingers 1022b are all along a plurality of first electrode fingers 1022b.
  • the direction in which the electrode fingers 1021b and the plurality of second electrode fingers 1022b are arranged alternately in sequence first decreases and then increases.
  • the manufacturing process of the dielectric layer 103 can be simplified, and the construction of the bulk acoustic wave resonator 100 can be simplified. Craftsmanship.
  • the variation rules of the thickness of the dielectric layer 103 between multiple pairs of adjacent first electrode fingers 1021b and second electrode fingers 1022b are not completely the same. It should be understood that "the variation rules of the thickness of the dielectric layer 103 between multiple pairs of adjacent first electrode fingers 1021b and second electrode fingers 1022b are not completely the same", it may be multiple pairs of adjacent first electrode fingers 1021b and second electrode fingers 1021b.
  • the variation rules of the thickness of the dielectric layer 103 between the two electrode fingers 1022b are not the same, or the thickness variation rules of the dielectric layer 103 between some adjacent first electrode fingers 1021b and second electrode fingers 1022b are the same, and some The variation rules of the thickness of the dielectric layer 103 between adjacent first electrode fingers 1021b and second electrode fingers 1022b are different. In the case where the variation rules of the thickness of the dielectric layer 103 between multiple pairs of adjacent first electrode fingers 1021b and second electrode fingers 1022b are not completely the same, the dielectric layer 103 is located between the first pair of adjacent first electrode fingers 1021b and 1022b.
  • the variation law of the thickness of the portion between the second electrode fingers 1022b is different from the thickness variation law of the portion of the dielectric layer 103 between the second pair of adjacent first electrode fingers 1021b and the second electrode fingers 1022b.
  • the thickness of the part of the dielectric layer 103 located between the first pair of adjacent first electrode fingers 1021b and the second electrode fingers 1022b namely 1031 in FIG. Finger 1021b and a plurality of second electrode fingers 1022b are arranged alternately in sequence, and the thickness of the part of dielectric layer 103 located between the first pair of adjacent first electrode fingers 1021b and second electrode fingers 1022b is 1031 in FIG.
  • the dielectric layer 103 is located between the second pair of adjacent first electrode fingers 1021b' and second electrode fingers 1022b, that is, the thickness variation law of 1031' in Figure 13 is along a plurality of first The direction in which the electrode fingers 1021b and the plurality of second electrode fingers 1022b are arranged alternately in sequence, and the part of the dielectric layer 103 located between the second pair of adjacent first electrode fingers 1021b′ and the second electrode fingers 1022b is 1031 in FIG. 13 The thickness of ⁇ increases first and then decreases.
  • the thickness of the part of the dielectric layer 103 located between the first pair of adjacent first electrode fingers 1021b and the second electrode fingers 1022b is, 1031 in FIG.
  • the direction in which electrode fingers 1021b and multiple second electrode fingers 1022b are arranged alternately in sequence is the thickness of 1031 in FIG.
  • the part of the dielectric layer 103 located between the second pair of adjacent first electrode fingers 1021b' and the second electrode fingers 1022b, that is, 1031' in Figure 14 includes a plurality of first electrode fingers 1021b and The direction in which the plurality of second electrode fingers 1022b are arranged alternately in sequence, the plurality of regions 1031a arranged in sequence, the thickness of each region 1031a is along the direction in which the plurality of first electrode fingers 1021b and the plurality of second electrode fingers 1022b are arranged alternately in sequence , first decrease and then increase.
  • the thickness variation law of the part of the dielectric layer 103 located between the first pair of adjacent first electrode fingers 1021b and the second electrode finger 1022b, and the dielectric layer 103 located between the second pair of adjacent first electrode fingers 1021b and the second electrode finger 1021b In the case where the thickness variation rules of the part between the two electrode fingers 1022b are not the same, the periodicity of the sound wave propagation can be further destroyed, thereby further suppressing the excitation of high-order modes during the sound wave propagation, which is more conducive to reducing or avoiding stray resonance .
  • the design freedom of the bulk acoustic wave resonator 100 can be further enriched.
  • first pair of adjacent first electrode fingers 1021b and second electrode fingers 1022b may share a first pair of adjacent first electrode fingers 1021b and second electrode fingers 1022b.
  • the electrode fingers 1021b or the second electrode fingers 1022b that is, the above-mentioned first pair of adjacent first electrode fingers 1021b and second electrode fingers 1022b are in phase with the above-mentioned second pair of adjacent first electrode fingers 1021b and second electrode fingers 1022b. neighbor settings.
  • first pair of adjacent first electrode fingers 1021b and second electrode fingers 1022b do not share the first electrode fingers 1021b with the second pair of adjacent first electrode fingers 1021b and second electrode fingers 1022b
  • the second electrode fingers 1022b that is, the first pair of adjacent first electrode fingers 1021b and second electrode fingers 1022b, and the above-mentioned second pair of adjacent first electrode fingers 1021b and second electrode fingers 1022b are not adjacently arranged .
  • the difference between the second embodiment and the first embodiment is that, compared with the first embodiment, the base is added in the second embodiment.
  • the bulk acoustic wave resonator 100 provided in Embodiment 2 includes: a piezoelectric material layer 101, an interdigital transducer 102, a dielectric layer 103, and a substrate, and the piezoelectric material layer 101, the interdigital transducer 102, and the dielectric layer 103 are fixed on the substrate superior.
  • the piezoelectric material layer 101, the interdigital transducer 102 and the dielectric layer 103 can refer to the relevant description in the above-mentioned embodiment 1, and the description will not be repeated in the embodiment 2, and the embodiment 2 is only different from the embodiment 1. Partially, that is, only the base is introduced.
  • the bulk acoustic wave resonator 100 further includes: a substrate 104, which is disposed on the side of the piezoelectric material layer 101 away from the IDT 102, as shown in FIG. 16 , the base 104 is surrounded by a ring.
  • FIG. 15 is a cross-sectional view of the BAW resonator 100
  • FIG. 16 is a top view of the substrate 104 .
  • the ring surrounded by the base 104 may be, for example, a circular ring, a square ring, or other regular or irregular rings. It can be understood that the specific shape of the ring can be designed according to the shape of the figure surrounded by the boundary of the piezoelectric material layer 101 .
  • the material of the substrate 104 is a high-sonic material, such as silicon (Si), silicon carbide (SiC), diamond (diamond), sapphire (sapphire), aluminum nitride (AlN), etc. one or more.
  • a base 104 is provided in the bulk acoustic wave resonator 100 , and the base 104 can function as a support for supporting the piezoelectric material layer 101 , the IDT 102 and the dielectric layer 103 .
  • the base 104 is surrounded by a ring shape, a cavity structure can be formed, and the cavity structure can concentrate energy on the piezoelectric material layer 101 during the sound wave propagation process, thereby improving the performance of the bulk acoustic wave resonator 100. Quality factor.
  • setting the substrate 104 in the bulk acoustic wave resonator 100 can also achieve process compatibility, for example, the bonding of the acoustic filter 10 and other electronic components such as integrated circuit (integrated circuit, IC) devices can be realized through the substrate 104 .
  • integrated circuit integrated circuit
  • the difference between the third embodiment and the first embodiment is that, compared with the first embodiment, the third embodiment adds a base and a reflective layer.
  • the bulk acoustic wave resonator 100 provided in Embodiment 3 includes: a piezoelectric material layer 101, an interdigital transducer 102, a dielectric layer 103, a substrate and a reflective layer, a piezoelectric material layer 101, an interdigital transducer 102 and a dielectric layer 103 Fixed on substrate and reflective layer.
  • the piezoelectric material layer 101, the interdigital transducer 102, and the dielectric layer 103 can refer to the related description in the first embodiment above, and the third embodiment will not repeat the introduction, and the third embodiment is only different from the first embodiment. Partially, that is, only the substrate and reflective layer are introduced.
  • the bulk acoustic wave resonator 100 further includes: a laminated substrate 104 and a reflective layer 105; the reflective layer 105 is disposed between the substrate 104 and the piezoelectric material layer 101; wherein, The reflection layer 105 includes a first acoustic impedance layer 1051 and a second acoustic impedance layer 1052 which are alternately stacked; the acoustic impedance of the first acoustic impedance layer 1051 is different from that of the second acoustic impedance layer 1052 .
  • the number of layers of the first acoustic impedance layer 1051 and the second acoustic impedance layer 1052 in the reflective layer 105 is not limited, and can be set as required.
  • the number of layers of the first acoustic impedance layer 1051 and the number of layers of the second acoustic impedance layer 1052 may be the same or different.
  • the reflective layer 105 closest to the piezoelectric material layer 101 may be the first acoustic impedance layer 1051, or the second acoustic impedance layer 1052.
  • the reflective layer 105 closest to the substrate 104 may be the first acoustic impedance layer 1052.
  • the impedance layer 1051 may also be the second acoustic impedance layer 1052 .
  • the acoustic impedance of the first acoustic impedance layer 1051 may be greater than that of the second acoustic impedance layer 1052 ; or the acoustic impedance of the second acoustic impedance layer 1052 may be greater than that of the first acoustic impedance layer 1051 .
  • the material of the substrate 104 is a high-sonic material
  • the high-sonic material may include, for example, one or more of silicon, silicon carbide, diamond, sapphire, aluminum nitride, and the like.
  • the bulk acoustic wave resonator 100 includes a reflective layer 105, since the reflective layer 105 can reflect the sound wave to the piezoelectric material layer 101, so that energy can be concentrated in the piezoelectric material layer 101 during the sound wave propagation process, This can improve the quality factor of the bulk acoustic wave resonator 100 .
  • the substrate 104 in the bulk acoustic wave resonator 100 is used for supporting the reflective layer 105 , the piezoelectric material layer 101 , the interdigital transducer 102 and the dielectric layer 103 .
  • the substrate 104 in the bulk acoustic wave resonator 100 can also achieve process compatibility, for example, the bonding of the acoustic filter 10 and other electronic components such as IC devices can be realized through the substrate 104 .

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Abstract

本申请的实施例提供一种体声波谐振器、声学滤波器及电子设备，涉及半导体技术领域，可以提升声学滤波器的性能。该体声波谐振器包括压电材料层、叉指换能器和介质层；叉指换能器设置于压电材料层上，叉指换能器包括相对设置的第一汇流条、第二汇流条、多个第一电极指和多个第二电极指，多个第一电极指沿第一汇流条延伸方向，依次从第一汇流条向第二汇流条突出；多个第二电极指沿第二汇流条延伸方向，依次从第二汇流条向第一汇流条突出；其中，多个第一电极指和多个第二电极指在第一汇流条和第二汇流条之间依次交错排布；介质层覆盖压电材料层以及叉指换能器，介质层位于至少一对相邻的第一电极指和第二电极指之间的部分的厚度有高低起伏。

Description

一种体声波谐振器、声学滤波器及电子设备 技术领域
本申请涉及半导体技术领域，尤其涉及一种体声波谐振器、声学滤波器及电子设备。
背景技术
随着移动通讯水平的发展及人们对通讯速度要求的不断提高，越来越多的频带被应用于移动通讯系统。其中，声学滤波器是移动通讯系统中的一个重要部件。
现有的声学滤波器是提升通信质量的瓶颈，随着更多通信模式和通信场景的落地，声学滤波性能面临更大的挑战，提升声学滤波器的性能是目前声学滤波器的研究重点和难点。
发明内容
本申请的实施例提供一种体声波谐振器、声学滤波器及电子设备，可以提升声学滤波器的性能。
为达到上述目的，本申请采用如下技术方案：
第一方面，提供一种体声波谐振器，该体声波谐振器包括压电材料层、叉指换能器和介质层；其中，叉指换能器设置于压电材料层上，叉指换能器包括相对设置的第一汇流条和第二汇流条、多个第一电极指、以及多个第二电极指；多个第一电极指沿第一汇流条延伸方向，依次从第一汇流条向第二汇流条突出；多个第二电极指沿第二汇流条延伸方向，依次从第二汇流条向第一汇流条突出；其中，多个第一电极指和多个第二电极指在第一汇流条和第二汇流条之间依次交错排布；介质层覆盖压电材料层以及叉指换能器，介质层位于至少一对相邻的第一电极指和第二电极指之间的部分的厚度有高低起伏，介质层中厚度有高低起伏的部分用于抑制声波传播时高阶模式的激发。
在本申请中，由于体声波谐振器中的介质层位于至少一对相邻的第一电极指和第二电极指之间的部分的厚度有高低起伏，因而声波在第一电极指和第二电极指之间传播时，介质层中厚度有高低起伏的部分可以破坏声波传播的周期性，改变声波传输特性，从而可以抑制声波传播时高阶模式的激发，这样一来，可以使得体声波谐振器的主模式被激发，高阶杂散模式得到抑制，减小或避免了杂散谐振，有利于提高声学滤波器的性能，且有利于声学滤波器的设计。
在一种可能的实施方式中，沿多个第一电极指和多个第二电极指依次交错排布的方向，介质层位于至少一对相邻的第一电极指和第二电极指之间的部分的厚度先减小后增加。由于介质层位于至少一对相邻的第一电极指和第二电极指之间的部分的厚度先减小后增加，因此介质层中厚度先减小后增加的部分可以破坏声波传播的周期性，从而抑制声波传播时高阶模式的激发，减小或避免了杂散谐振，进而有利于提高声学滤波器的性能，且有利于声学滤波器的设计。在此基础上，由于介质层中厚度有高低起伏的部分的厚度按照一定的规律分布，因而可以提高体声波谐振器的主模式机电耦 合系数，且可以简化介质层的设计难度。此外，可以根据需要选择介质层的厚度变化规律，从而可以提高介质层的设计自由度。
在一种可能的实施方式中，沿多个第一电极指和多个第二电极指依次交错排布的方向，介质层位于至少一对相邻的第一电极指和第二电极指之间的部分的厚度先增大后减小。由于介质层位于至少一对相邻的第一电极指和第二电极指之间的部分的厚度先增大后减小，因此介质层中厚度先增大后减小的部分可以破坏声波传播的周期性，从而抑制声波传播时高阶模式的激发，减小或避免了杂散谐振，进而有利于提高声学滤波器的性能，且有利于声学滤波器的设计。在此基础上，由于介质层中厚度有高低起伏的部分的厚度按照一定的规律分布，因而可以提高体声波谐振器的主模式机电耦合系数，且可以简化介质层的设计难度。此外，可以根据需要选择介质层的厚度变化规律，从而可以提高介质层的设计自由度。
在一种可能的实施方式中，介质层位于至少一对相邻的第一电极指和第二电极指之间的部分包括沿多个第一电极指和多个第二电极指依次交错排布的方向，依次排列的多个区域，每个区域的厚度沿多个第一电极指和多个第二电极指依次交错排布的方向，先减小后增大，或者，先增大后减小。由于介质层位于至少一对相邻的第一电极指和第二电极指之间的部分的每个区域的厚度先减小后增大，或者，先增大后减小，因此这多个区域的介质层可以破坏声波传播的周期性，从而抑制声波传播时高阶模式的激发，减小或避免了杂散谐振，进而有利于提高声学滤波器的性能，且有利于声学滤波器的设计。在此基础上，由于介质层位于至少一对相邻的第一电极指和第二电极指之间的部分的每个区域的厚度按照一定的规律分布，因而可以提高体声波谐振器的主模式机电耦合系数，且可以简化介质层的设计难度。此外，可以根据需要选择介质层的厚度变化规律，从而可以提高介质层的设计自由度。
在一种可能的实施方式中，介质层位于第一对相邻的第一电极指和第二电极指之间的部分的厚度变化规律，和，介质层位于第二对相邻的第一电极指和第二电极指之间的部分的厚度变化规律不相同。这样可以进一步破坏声波传播时的周期性，进而进一步抑制声波传播时高阶模式的激发，更有利于减小或避免杂散谐振。此外，还可以进一步丰富体声波谐振器的设计自由度。
在一种可能的实施方式中，第一对相邻的第一电极指和第二电极指，和，第二对相邻的第一电极指和第二电极指共用一个第一电极指或第二电极指，即第一对相邻的第一电极指和第二电极指，与第二对相邻的第一电极指和第二电极指相邻设置。
在一种可能的实施方式中，体声波谐振器还包括：基底，基底设置在压电材料层远离叉指换能器的一侧，基底围成环状。基底可以起支撑作用，用于支撑压电材料层、叉指换能器和介质层。在此基础上，由于基底围成环状，这样可以形成一个空腔结构，在声波传播过程中，空腔结构可以将能量集中在压电材料层，从而可以提高体声波谐振器的品质因数。此外，在体声波谐振器中设置基底也可以实现工艺兼容，例如可以通过基底实现声学滤波器与其它电子元器件例如集成电路器件的绑定。
在一种可能的实施方式中，体声波谐振器还包括：层叠设置的基底和反射层；反射层设置于基底和压电材料层之间；其中，反射层包括层叠交替设置的第一声阻抗层和第二声阻抗层；第一声阻抗层的声阻抗和第二声阻抗层的声阻抗不同。由于反射层 可以将声波反射向压电材料层，从而在声波传播过程中，可以将能量集中在压电材料层，这样可以提高体声波谐振器的品质因数。在此基础上，体声波谐振器中的基底用于起其支撑作用，用于支撑反射层、压电材料层、叉指换能器和介质层。此外，体声波谐振器中的基底也可以实现工艺兼容，例如可以通过基底实现声学滤波器与其它电子元器件例如IC器件的绑定。
在一种可能的实施方式中，基底的材料包括硅、碳化硅、金刚石、蓝宝石或氮化铝中的一种或多种。
在一种可能的实施方式中，介质层的材料包括氧化硅、氮化硅、氮氧化硅或氧化铝中的一种或多种。
第二方面，提供一种声学滤波器，该声学滤波器包括多个级联的体声波谐振器；其中，体声波谐振器为上述第一方面提供的体声波谐振器。由于声学滤波器具有与上述第一方面提供的体声波谐振器相同的技术效果，因而可以参考上述第一方面的相关描述，此处不再赘述。
第三方面，提供一种电子设备，该电子设备包括声学滤波器、处理器和印刷电路板，声学滤波器和处理器均设置在印刷电路板上；其中，声学滤波器为上述第二方面提供的声学滤波器。由于电子设备具有与上述第一方面提供的体声波谐振器相同的技术效果，因而可以参考上述第一方面的相关描述，此处不再赘述。
附图说明
图1为本申请的实施例提供的一种电子设备的结构示意图；
图2为本申请的实施例提供的一种声学滤波器的结构示意图；
图3a为本申请的实施例提供的一种体声波谐振器的结构示意图；
图3b为图3a中沿AA向的剖面示意图；
图4为本申请的实施例提供的一种叉指换能器的结构示意图；
图5a为本申请的另一实施例提供的一种体声波谐振器的结构示意图；
图5b为本申请的又一实施例提供的一种体声波谐振器的结构示意图；
图6为相关技术提供的一种体声波谐振器的结构示意图；
图7为图6所示的体声波谐振器对应的导纳曲线图；
图8为图3b所示的体声波谐振器对应的导纳曲线图；
图9为本申请的又一实施例提供的一种体声波谐振器的结构示意图；
图10a为本申请的又一实施例提供的一种体声波谐振器的结构示意图；
图10b为本申请的又一实施例提供的一种体声波谐振器的结构示意图；
图11a为本申请的又一实施例提供的一种体声波谐振器的结构示意图；
图11b为本申请的又一实施例提供的一种体声波谐振器的结构示意图；
图12为本申请的又一实施例提供的一种体声波谐振器的结构示意图；
图13为本申请的又一实施例提供的一种体声波谐振器的结构示意图；
图14为本申请的又一实施例提供的一种体声波谐振器的结构示意图；
图15为本申请的又一实施例提供的一种体声波谐振器的结构示意图；
图16为本申请的实施例提供的一种基底的结构示意图；
图17为本申请的又一实施例提供的一种体声波谐振器的结构示意图。
附图标记：1-电子设备；10-声学滤波器；11-盖板；12-显示屏；13-中框；14-后壳；100-体声波谐振器；101-压电材料层；102-叉指换能器；103-介质层；104-基底；105-反射层；131-承载板；132-边框；1021a-第一汇流条；1021b-第一电极指；1022a-第二汇流条；1022b-第二电极指；1031a-区域；1051-第一声阻抗层；1052-第二声阻抗层。
具体实施方式
下面将结合本申请实施例中的附图，对本申请实施例中的技术方案进行描述，显然，所描述的实施例仅仅是本申请一部分实施例，而不是全部的实施例。
以下，术语“第一”、“第二”等仅用于描述方便，而不能理解为指示或暗示相对重要性或者隐含指明所指示的技术特征的数量。由此，限定有“第一”、“第二”等的特征可以明示或者隐含地包括一个或者更多个该特征。在本申请的描述中，除非另有说明，“多个”的含义是两个或两个以上。
在本申请实施例中，“示例性的”或者“例如”等词用于表示作例子、例证或说明。本申请实施例中被描述为“示例性的”或者“例如”的任何实施例或设计方案不应被解释为比其它实施例或设计方案更优选或更具优势。确切而言，使用“示例性的”或“例如”等词旨在以具体方式呈现相关概念。
在本申请实施例中，“和/或”，描述关联对象的关联关系，表示可以存在三种关系，例如，A和/或B，可以表示：单独存在A，同时存在A和B，单独存在B的情况，其中A，B可以是单数或者复数。字符“/”一般表示前后关联对象是一种“或”的关系。
本申请的实施例提供一种电子设备，该电子设备例如可以为手机(mobile phone)、平板电脑(pad)、个人数字助理(personal digital assistant，PDA)、电视、智能穿戴产品(例如，智能手表、智能手环)、虚拟现实(virtual reality，VR)终端设备、增强现实(augmented reality，AR)终端设备、充电家用小型电器(例如豆浆机、扫地机器人)、无人机、雷达、航空航天设备和车载设备等不同类型的用户设备或者终端设备，本申请实施例对电子设备的具体形式不作特殊限制。
以下为了方便说明，以电子设备为手机为例进行举例说明。如图1所示，电子设备1主要包括盖板11、显示屏12、中框13以及后壳14。后壳14和显示屏12分别位于中框13的两侧，且中框13和显示屏12设置于后壳14内，盖板11设置在显示屏12远离中框13的一侧，显示屏12的显示面朝向盖板11。
上述显示屏12可以是液晶显示屏(liquid crystal display，LCD)，在此情况下，液晶显示屏包括液晶显示面板和背光模组，液晶显示面板设置在盖板11和背光模组之间，背光模组用于为液晶显示面板提供光源。上述显示屏12也可以为有机发光二极管(organic light emitting diode，OLED)显示屏。由于OLED显示屏为自发光显示屏，因而无需设置背光模组。
上述中框13包括承载板131以及绕承载板131一周的边框132。上述电子设备1还可以包括印刷电路板(printed circuit boards，PCB)、电池、摄像头等电子元器件，印刷电路板、电池、摄像头等电子元器件可以设置在承载板131上。
上述电子设备1还可以包括设置于PCB上的系统级芯片(system on chip，SOC)、射频芯片等，PCB用于承载系统级芯片、射频芯片等，且与系统级芯片、射频芯片等电连接。其中，射频芯片可以包括声学滤波器、处理器等部分。处理器用于对各种信 号进行处理，声学滤波器是射频信号处理的重要部分，用于通过特定频率的信号，让其他频率的信号受阻。
本申请的实施例提供一种声学滤波器，该声学滤波器可以应用于上述的电子设备1中，例如应用于电子设备1中的射频芯片中，本申请实施例提供的声学滤波器例如可以为低通声学滤波器、高通声学滤波器、带通声学滤波器、带阻声学滤波器或有源声学滤波器等。
Ladder型声学滤波器是当前声学滤波器普遍采用的拓扑结构，本申请实施例提供的声学滤波器为Ladder型声学滤波器，如图2所示，本申请的实施例提供的声学滤波器10包括多个级联的体声波(bulk acoustic wave，BAW)谐振器100，这多个体声波谐振器100可以具有不同的谐振频率，且可以通过串并联的方式级联在一起。参考图2，在多个体声波谐振器100通过串并联的方式级联在一起时，图2还示意出了声学滤波器10的信号输入端Vin、信号输出端Vout以及接地端GND。
此处，由具有不同谐振频率的串并联谐振器级联构成的声学滤波器具有通带插损小、带外陡峭度高及功率耐受性强等优点。
本申请实施例还提供一种体声波谐振器，该体声波谐振器100可以应用于上述的声学滤波器10中，以下通过几个实施例对体声波谐振器的100的结构进行示例性说明。
实施例一
在本实施例一中，如图3a和图3b所示，该体声波谐振器100包括：压电材料层101、叉指换能器(interdigital transducer，IDT)102和介质层103。
图3a为体声波谐振器100的俯视结构示意图，图3b为图3a中沿AA向的剖面示意图。
此处，压电材料层101的材料例如可以包括LiNbO 3(铌酸锂)、LiTaO 3(钽酸锂)等中的一种或多种。
应当理解到，压电材料层101的作用是通过将电能转化为声波形式的机械能来产生逆压电效应。由于本申请实施例提供的谐振器是体声波谐振器，对于体声波谐振器，声波主要在压电材料层101中传播，相对于声表面波(surface acoustic wave，SAW)谐振器，体声波谐振器中压电材料层101的厚度较小，在本申请实施例中，压电材料层101的厚度例如可以为(0，2]μm，即压电材料层101的厚度大于零，小于或等于2μm。
参考图3b，上述的叉指换能器102设置于压电材料层101上，如图4所示，叉指换能器102包括相对设置的第一汇流条(busbar)1021a和第二汇流条1022a、多个第一电极指(IDT electrode)1021b、以及多个第二电极指1022b；多个第一电极指1021b沿第一汇流条1021a延伸方向，依次从第一汇流条1021a向第二汇流条1022a突出；多个第二电极指1022b沿第二汇流条1022a延伸方向，依次从第二汇流条1022a向第一汇流条1021a突出；其中，多个第一电极指1021b和多个第二电极指1022b在第一汇流条1021a和第二汇流条1022a之间依次交错排布，且第一电极指1021b和第二电极指1022b之间不接触。
上述“多个第一电极指1021b和多个第二电极指1022b在第一汇流条1021a和第二汇流条1022a之间依次交错排布”指的是：在第一汇流条1021a和第二汇流条1022a之间，一个第一电极指1021b、一个第二电极指1022b、一个第一电极指1021b、一个 第二电极指1022b、一个第一电极指1021b、一个第二电极指1022b等等依次设置。
对于叉指换能器102中第一电极指1021b的数量、以及第二电极指1022b的数量不进行限定，可以根据需要进行设置。多个第一电极指1021b可以是等间距排布，也可以是非等间距排布。同样的，多个第二电极指1022b可以是等间距排布，也可以是非等间距排布。以第一电极指1021b为例，多个第一电极指1021b非等间距排布指的是至少一对相邻的第一电极指1021b之间的间距与另一对相邻的第一电极指1021b之间的间距不相同。
此外，多个第一电极指1021b和多个第二电极指1022b依次交错排布，可以是相邻第一电极指1021b和第二电极指1022b之间的间距均相同；也可以是多对相邻的第一电极指1021b和第二电极指1022b之间的间距不完全相同，即至少一对相邻的第一电极指1021b和第二电极指1022b之间的间距与另一对相邻的第一电极指1021b和第二电极指1022b之间的间距不相同。
需要说明的是，第一汇流条1021a、第一电极指1021b、第二汇流条1022a和第二电极指1022b可以同时制作；也可以先制作第一汇流条1021a和第一电极指1021b，再制作第二汇流条1022a和第二电极指1022b；或者，先制作第二汇流条1022a和第二电极指1022b，再制作第一汇流条1021a和第一电极指1021b。
另外，叉指换能器102的材料例如可以为Al(铝)、Mo(钼)、W(钨)、Ru(钌)、Cu(铜)和Pt(铂)中的一种或多种。
请继续参考图3b，上述介质层103覆盖压电材料层101以及叉指换能器102，介质层103位于至少一对相邻的第一电极指1021b和第二电极指1022b之间的部分的厚度有高低起伏，介质层103中厚度有高低起伏的部分用于抑制声波传播时高阶模式的激发。如图3b所示，介质层103位于一对相邻的第一电极指1021b和第二电极指1022b之间，且厚度有高低起伏的部分用1031标示。
上述介质层103的材料例如可以包括氧化硅(SiOx)、氮化硅(SiNx)、氮氧化硅(SiOxNy)或氧化铝(Al 2O 3)中的一种或多种。
需要说明的是，可以是一对相邻的第一电极指1021b和第二电极指1022b之间的介质层103的厚度有高低起伏；也可以是多对相邻的第一电极指1021b和第二电极指1022b之间的介质层103的厚度有高低起伏。
此处，对于介质层103位于一对相邻的第一电极指1021b和第二电极指1022b之间的部分的厚度有高低起伏的理解，可以认为位于一对相邻的第一电极指1021b和第二电极指1022b之间的介质层103的全部的厚度都有高低起伏；也可以认为位于一对相邻的第一电极指1021b和第二电极指1022b之间的介质层103的部分的厚度有高低起伏，部分的厚度不变。在此基础上，介质层103位于一对相邻的第一电极指1021b和第二电极指1022b之间的部分的厚度有高低起伏，高低起伏的部分可以是连续的一个整体，也可以包括间断的多个子部分。
在此基础上，介质层103除了包括位于相邻的第一电极指1021b和第二电极指1022b之间的部分外，还包括位于第一电极指1021b或第二电极指1022b上方的部分，在图3b中，介质层103中位于第一电极指1021b或第二电极指1022b上方的部分用1032示意，位于第一电极指1021b或第二电极指1022b上方的部分1032与第一电极 指1021b或第二电极指1022b在垂直于压电材料层101的方向上重叠。
此处，位于第一电极指1021b或第二电极指1022b上方的部分1032的厚度可以是完全相同的，即厚度没有高低起伏；也可以是位于第一电极指1021b或第二电极指1022b上方的部分1032的厚度有高低起伏。应当理解到，在一些示例中，如图5a所示，介质层103位于每对相邻的第一电极指1021b和第二电极指1022b之间的部分的厚度都有高低起伏。在另一些示例中，如图5b所示，介质层103位于至少一对相邻的第一电极指1021b和第二电极指1022b之间的部分的厚度有高低起伏，且介质层103位于至少一对相邻的第一电极指1021b和第二电极指1022b之间的部分的厚度没有高低起伏，即介质层103位于至少一对相邻的第一电极指1021b和第二电极指1022b之间的部分的厚度是相同的。如图5b所示，介质层103位于一对相邻的第一电极指1021b和第二电极指1022b之间，且厚度没有高低起伏的部分用1033标示。
此处，可以是一对相邻的第一电极指1021b和第二电极指1022b之间的介质层103的厚度没有高低起伏；也可以是多对相邻的第一电极指1021b和第二电极指1022b之间的介质层103的厚度没有高低起伏。
随着移动通讯水平的发展及人们对通讯速度要求的不断提高，越来越多的频带被应用于移动通讯系统。作为5G通讯系统的重要频段，N77及N79具有工作频率高、带宽大等特点，特别是N77频段，其工作频带为3300MHz～4200MHz，带宽比为24％。由于Ladder型滤波器具有通带插损小、带外陡峭度高及功率耐受性强等优点，因而当前3GHz以下频段滤波器主要采用由声表面波(surface acoustic wave，SAW)谐振器、薄膜体声波谐振器(film bulk acoustic resonator，FBAR)、或者固装型体声波谐振器(solidly mounted resonator，SMR)级联构成的Ladder型拓扑结构。鉴于N77频段带宽比为24％，构成Ladder滤波器的谐振器需具有25％以上的机电耦合系数才可满足其带宽需求。然而，当前的声表面波谐振器、薄膜体声波谐振器、以及固装型体声波谐振器均无法满足上述要求。而本申请实施例提供的体声波谐振器为激励式薄膜体声谐振器(excited film bulk acoustic resonator，XBAR)，本申请实施例提供的体声波谐振器通过在压电材料层101上激发A1Lamb(兰姆)波，从而可以使得体声波谐振器100具有25％机电耦合系数，因此可以满足N77频段的要求。
图6为相关技术提供的一种XBAR谐振器，如图6所示，该XBAR谐振器包括压电材料层101、叉指换能器102和介质层103，叉指换能器102设置在压电材料层101上，叉指换能器102的结构可以参考上述，此处不再赘述，介质层103覆盖叉指换能器102，位于相邻的第一电极指1021b和第二电极指1022b之间的介质层103的厚度没有高低起伏，即厚度相同。图6提供的体声波谐振器100通过在压电材料层101上激发A1Lamb波，虽然可以使体声波谐振器100具有25％的机电耦合系数，能够满足N77频段的要求，但是图6提供的体声波谐振器100由于存在其他体波模式及A1高阶模式，导致杂散模式严重，严重制约声学滤波器10的设计及性能。声学滤波器10中的体声波谐振器100在制备完成后，常利用矢量网络分析仪测试得到体声波谐振器100的导纳(admittance)曲线，导纳曲线可以用于表征体声波谐振器100的各种指标。
图7为图6所示的体声波谐振器100对应的导纳曲线，图7中横坐标表示频率，纵坐标表示导纳。参考图7，该体声波谐振器100的谐振频率和反谐振频率分别为 3960MHz和4940MHz。参考图7还可以看出，体声波谐振器100除了包括主谐振外，还存在其他杂散谐振，例如，在频率为5160MHz处存在杂散谐振，图7中还示意出了主模式及杂散模式对应的位移场分布图，由位移场分布图可以看出，主模式为A1Lamb模式，即低阶模式，图7中频率为5160MHz处存在杂散模式是由于声波在第一电极指1021b和第二电极指1022b之间形成的高阶模式导致的，而杂散谐振会严重影响声学滤波器10的性能，并制约声学滤波器10的设计。通过图7中杂散模式对应的位移场的分布图可以看出，第一电极指1021b和第二电极指1022b之间形成的高阶模式是由于声波在第一电极指1021b和第二电极指1022b之间恒定的传输特性区域传播时满足高阶谐振条件而激发的。
而在本实施例一中，由于体声波谐振器100中的介质层103位于至少一对相邻的第一电极指1021b和第二电极指1022b之间的部分的厚度有高低起伏，因而声波在第一电极指1021b和第二电极指1022b之间传播时，介质层103中厚度有高低起伏的部分可以破坏传播的周期性，改变声波传输特性，从而可以抑制声波传播时高阶模式的激发，这样一来，可以使得体声波谐振器100的主模式被激发，高阶杂散模式得到抑制，减小或避免了杂散谐振，有利于提高声学滤波器10的性能，且有利于声学滤波器10的设计。
图8为本申请实施例中图3b提供的体声波谐振器100对应的导纳曲线，图8中横坐标表示频率，纵坐标表示导纳。参考图8，该体声波谐振器100的谐振频率和反谐振频率分别为3960MHz和4940MHz。对比图7和图8可以看出，图8所示的导纳曲线除了主模式外没有其他杂散谐振。图8中还示意出了主模式以及图7中杂散谐振频点对应的位移场分布图，由图8中的位移场的分布图可以看出，图3b提供的体声波谐振器100中仅有主模式被激发，高阶杂散模式得到抑制。
在此基础上，需要说明的是，在介质层103位于至少一对相邻的第一电极指1021b和第二电极指1022b之间的部分的厚度有高低起伏的情况下，介质层103位于至少一对相邻的第一电极指1021b和第二电极指1022b之间的部分的厚度可以按照一定的变化规律分布，也可以是无规律分布。在介质层103位于至少一对相邻的第一电极指1021b和第二电极指1022b之间的部分的厚度按照一定的变化规律分布的情况下，以下提供示例性地提供几种实现方式。
第一种实现方式：如图3b所示，沿多个第一电极指1021b和多个第二电极指1022b依次交错排布的方向，介质层103位于至少一对相邻的第一电极指1021b和第二电极指1022b之间的部分的厚度先减小后增加。
第二种实现方式：如图9所示，沿多个第一电极指1021b和多个第二电极指1022b依次交错排布的方向，介质层103位于至少一对相邻的第一电极指1021b和第二电极指1022b之间的部分的厚度先增大后减小。
第三种实现方式，如图10a所示，介质层103位于至少一对相邻的第一电极指1021b和第二电极指1022b之间的部分包括沿多个第一电极指1021b和多个第二电极指1022b依次交错排布的方向，依次排列的多个区域1031a，每个区域1031a的厚度沿多个第一电极指1021b和多个第二电极指1022b依次交错排布的方向，先减小后增大。
第四种实现方式，如图10b所示，介质层103位于至少一对相邻的第一电极指 1021b和第二电极指1022b之间的部分包括沿多个第一电极指1021b和多个第二电极指1022b依次交错排布的方向，依次排列的多个区域1031a，每个区域1031a的厚度沿多个第一电极指1021b和多个第二电极指1022b依次交错排布的方向，先增大后减小。
在第三种实现方式和第四种实现方式中，介质层103位于至少一对相邻的第一电极指1021b和第二电极指1022b之间的部分包括的区域1031a的数量可以根据需要进行设置。图10a和图10b以介质层103位于至少一对相邻的第一电极指1021b和第二电极指1022b之间的部分包括两个区域1031a为例进行示意。
需要说明的是，对于上述第一种、第二种、第三种和第四种实现方式，介质层103中厚度有高低起伏的部分远离压电材料层101的表面可以由多个平面构成；也可以由多个弧面构成；当然还可以由至少一个平面和至少一个弧面构成。以第一种实现方式为例，图3b中介质层103中厚度有高低起伏的部分远离压电材料层101的表面由多个平面构成；图11a中介质层103中厚度有高低起伏的部分远离压电材料层101的表面由多个弧面构成；图11b中介质层103中厚度有高低起伏的部分远离压电材料层101的表面由至少一个平面和至少一个弧面构成。
此外，在介质层103中厚度有高低起伏的部分远离压电材料层101的表面包括弧面的情况下，该弧面可以向远离压电材料层101的方向凸起，也可以向靠近压电材料层101的方向凹陷。图11a和图11b以弧面向靠近压电材料层101的方向凹陷为例进行示意。
当介质层103位于至少一对相邻的第一电极指1021b和第二电极指1022b之间的部分的厚度变化规律采用上述第一种、第二种、第三种或第四种实现方式时，由于介质层103位于至少一对相邻的第一电极指1021b和第二电极指1022b之间的部分的厚度有高低起伏，因此介质层103中厚度发生变化的部分可以破坏声波传播的周期性，从而抑制声波传播时高阶模式的激发，减小或避免了杂散谐振，进而有利于提高声学滤波器10的性能，且有利于声学滤波器10的设计。在此基础上，由于介质层103中厚度发生变化的部分的厚度按照一定的规律分布，因而可以提高体声波谐振器100的主模式机电耦合系数，且可以简化介质层103的设计难度。此外，可以根据需要选取第一种、第二种、第三种或第四种实现方式，从而可以提高介质层103的设计自由度。
当介质层103位于至少一对相邻的第一电极指1021b和第二电极指1022b之间的部分的厚度的变化具有一定的规律时，在设计介质层103时，可以以体声波谐振器101中的某一点为原点，介质层103的某一位置处厚度是沿多个第一电极指1021b和多个第二电极指1022b依次交错排布的方向，该位置处到原点的距离x的函数，即f h＝f(x)，其中，f h为介质层103的某一位置处的厚度。
在介质层103位于多对相邻的第一电极指1021b和第二电极指1022b之间的部分的厚度有高低起伏的情况下，在一些示例中，多对相邻的第一电极指1021b和第二电极指1022b之间的介质层103的厚度变化规律相同，例如，如图12所示，介质层103位于相邻的第一电极指1021b和第二电极指1022b之间的部分1031的厚度变化规律，与，介质层103位于相邻的第一电极指1021b`和第二电极指1022b之间的部分1031`的厚度变化规律相同，介质层103位于相邻的第一电极指1021b和第二电极指1022b 之间的部分1031的厚度变化规律和介质层103位于相邻的第一电极指1021b`和第二电极指1022b之间的部分1031`的厚度变化规律都是沿多个第一电极指1021b和多个第二电极指1022b依次交错排布的方向，先减小后增大。
在多对相邻的第一电极指1021b和第二电极指1022b之间的介质层103的厚度变换规律相同的情况下，可以简化介质层103的制作工艺，进而可以简化体声波谐振器100的制作工艺。
在另一些示例中，多对相邻的第一电极指1021b和第二电极指1022b之间的介质层103的厚度变化规律不完全相同。应当理解到，“多对相邻的第一电极指1021b和第二电极指1022b之间的介质层103的厚度变化规律不完全相同”，可以是多对相邻的第一电极指1021b和第二电极指1022b之间的介质层103的厚度变化规律都不相同，也可以是有些相邻的第一电极指1021b和第二电极指1022b之间的介质层103的厚度变化规律相同，有些相邻的第一电极指1021b和第二电极指1022b之间的介质层103的厚度变化规律不相同。在多对相邻的第一电极指1021b和第二电极指1022b之间的介质层103的厚度变化规律不完全相同的情况下，介质层103位于第一对相邻的第一电极指1021b和第二电极指1022b之间的部分的厚度变化规律，和，介质层103位于第二对相邻的第一电极指1021b和第二电极指1022b之间的部分的厚度变化规律不相同。
例如，如图13所示，介质层103位于第一对相邻的第一电极指1021b和第二电极指1022b之间的部分即图13中的1031的厚度变化规律为沿多个第一电极指1021b和多个第二电极指1022b依次交错排布的方向，介质层103位于第一对相邻的第一电极指1021b和第二电极指1022b之间的部分即图13中的1031的厚度先减小后增大；介质层103位于第二对相邻的第一电极指1021b`和第二电极指1022b之间的部分即图13中的1031`的厚度变化规律为沿多个第一电极指1021b和多个第二电极指1022b依次交错排布的方向，介质层103位于第二对相邻的第一电极指1021b`和第二电极指1022b之间的部分即图13中的1031`的厚度先增大后减小。
又例如，如图14所示，介质层103位于第一对相邻的第一电极指1021b和第二电极指1022b之间的部分即图14中的1031的厚度变化规律为沿多个第一电极指1021b和多个第二电极指1022b依次交错排布的方向，介质层103位于第一对相邻的第一电极指1021b和第二电极指1022b之间的部分即图14中1031的厚度先减小后增大；介质层103位于第二对相邻的第一电极指1021b`和第二电极指1022b之间的部分即图14中的1031`包括沿多个第一电极指1021b和多个第二电极指1022b依次交错排布的方向，依次排列的多个区域1031a，每个区域1031a的厚度沿多个第一电极指1021b和多个第二电极指1022b依次交错排布的方向，先减小后增大。
在介质层103位于第一对相邻的第一电极指1021b和第二电极指1022b之间的部分的厚度变化规律，和，介质层103位于第二对相邻的第一电极指1021b和第二电极指1022b之间的部分的厚度变化规律不相同的情况下，可以进一步破坏声波传播时的周期性，进而进一步抑制声波传播时高阶模式的激发，更有利于减小或避免杂散谐振。此外，还可以进一步丰富体声波谐振器100的设计自由度。
在此基础上，可以是第一对相邻的第一电极指1021b和第二电极指1022b，和， 第二对相邻的第一电极指1021b和第二电极指1022b之间共用一个第一电极指1021b或第二电极指1022b，即上述第一对相邻的第一电极指1021b和第二电极指1022b，与上述第二对相邻的第一电极指1021b和第二电极指1022b相邻设置。也可以是上述第一对相邻的第一电极指1021b和第二电极指1022b，与上述第二对相邻的第一电极指1021b和第二电极指1022b之间未共用第一电极指1021b或第二电极指1022b，即上述第一对相邻的第一电极指1021b和第二电极指1022b，与上述第二对相邻的第一电极指1021b和第二电极指1022b不是相邻设置。
实施例二
实施例二和实施例一的区别之处在于，实施例二相对于实施例一增加了基底。
实施例二提供的体声波谐振器100包括：压电材料层101、叉指换能器102、介质层103以及基底，压电材料层101、叉指换能器102和介质层103固定于基底上。其中，压电材料层101、叉指换能器102以及介质层103可以参考上述实施例一中的相关描述，实施例二中不再重复介绍，实施例二仅对与实施例一不相同的部分进行介绍，即仅对基底进行介绍。
在本实施例二中，如图15所示，上述体声波谐振器100还包括：基底104，基底104设置在压电材料层101远离叉指换能器102的一侧，如图16所示，基底104围成环状。图15为体声波谐振器100的剖面图，图16为基底104的俯视图。
此处，基底104围成的环状例如可以为圆环状、方环状、其它规则形状或不规则形状的环状。可以理解的是，可以根据压电材料层101的边界围成的图形的形状设计环状的具体形状。
在一些示例中，基底104的材料为高声速材料，高声速材料例如可以包括硅(Si)、碳化硅(SiC)、金刚石(diamond)、蓝宝石(sapphire)、氮化铝(AlN)等中的一种或多种。
在体声波谐振器100中设置基底104，基底104可以起支撑作用，用于支撑压电材料层101、叉指换能器102和介质层103。在此基础上，由于基底104围成环状，这样可以形成一个空腔结构，在声波传播过程中，空腔结构可以将能量集中在压电材料层101，从而可以提高体声波谐振器100的品质因数。此外，在体声波谐振器100中设置基底104也可以实现工艺兼容，例如可以通过基底104实现声学滤波器10与其它电子元器件例如集成电路(integrated circuit，IC)器件的绑定(bonding)。
实施例三
实施例三与实施例一的区别之处在于，实施例三相对于实施例一增加了基底和反射层。
实施例三提供的体声波谐振器100包括：压电材料层101、叉指换能器102、介质层103、基底以及反射层，压电材料层101、叉指换能器102和介质层103固定于基底和反射层上。其中，压电材料层101、叉指换能器102以及介质层103可以参考上述实施例一中的相关描述，实施例三中不再重复介绍，实施例三仅对与实施例一不相同的部分进行介绍，即仅对基底和反射层进行介绍。
在本实施例三中，如图17所示，上述体声波谐振器100还包括：层叠设置的基底104和反射层105；反射层105设置于基底104和压电材料层101之间；其中，反射层105包括层叠交替设置的第一声阻抗层1051和第二声阻抗层1052；第一声阻抗层1051的声阻抗和第二声阻抗层1052的声阻抗不同。
此处，对于反射层105中第一声阻抗层1051和第二声阻抗层1052的设置层数不进行限定，可以根据需要进行设置。第一声阻抗层1051的层数和第二声阻抗层1052的层数可以相同，也可以不相同。另外，反射层105中最靠近压电材料层101的可以是第一声阻抗层1051，也可以是第二声阻抗层1052，同样的，反射层105中最靠近基底104的可以是第一声阻抗层1051，也可以是第二声阻抗层1052。
此外，可以是第一声阻抗层1051的声阻抗大于第二声阻抗层1052的声阻抗；也可以是第二声阻抗层1052的声阻抗大于第一声阻抗层1051的声阻抗。
在一些示例中，基底104的材料为高声速材料，高声速材料例如可以包括硅、碳化硅、金刚石、蓝宝石、氮化铝等中的一种或多种。
在本实施例三中，体声波谐振器100包括反射层105，由于反射层105可以将声波反射向压电材料层101，从而在声波传播过程中，可以将能量集中在压电材料层101，这样可以提高体声波谐振器100的品质因数。在此基础上，体声波谐振器100中的基底104用于起其支撑作用，用于支撑反射层105、压电材料层101、叉指换能器102和介质层103。此外，体声波谐振器100中的基底104也可以实现工艺兼容，例如可以通过基底104实现声学滤波器10与其它电子元器件例如IC器件的绑定。
以上所述，仅为本申请的具体实施方式，但本申请的保护范围并不局限于此，任何熟悉本技术领域的技术人员在本申请揭露的技术范围内，可轻易想到变化或替换，都应涵盖在本申请的保护范围之内。因此，本申请的保护范围应以所述权利要求的保护范围为准。

Claims (12)

  1. 一种体声波谐振器，其特征在于，包括：压电材料层，叉指换能器和介质层，其中，所述叉指换能器设置于所述压电材料层上，所述叉指换能器包括：
    相对设置的第一汇流条和第二汇流条；
    多个第一电极指，所述多个第一电极指沿第一汇流条延伸方向，依次从所述第一汇流条向所述第二汇流条突出；以及
    多个第二电极指，所述多个第二电极指沿所述第二汇流条延伸方向，依次从所述第二汇流条向所述第一汇流条突出；
    其中，所述多个第一电极指和所述多个第二电极指在所述第一汇流条和所述第二汇流条之间依次交错排布；
    所述介质层覆盖所述压电材料层以及所述叉指换能器，所述介质层位于至少一对相邻的第一电极指和第二电极指之间的部分的厚度有高低起伏。
  2. 根据权利要求1所述的体声波谐振器，其特征在于，沿所述多个第一电极指和所述多个第二电极指依次交错排布的方向，所述介质层位于至少一对相邻的所述第一电极指和所述第二电极指之间的部分的厚度先减小后增加。
  3. 根据权利要求1所述的体声波谐振器，其特征在于，沿所述多个第一电极指和所述多个第二电极指依次交错排布的方向，所述介质层位于至少一对相邻的所述第一电极指和所述第二电极指之间的部分的厚度先增大后减小。
  4. 根据权利要求1所述的体声波谐振器，其特征在于，所述介质层位于至少一对相邻的所述第一电极指和所述第二电极指之间的部分包括沿所述多个第一电极指和所述多个第二电极指依次交错排布的方向，依次排列的多个区域，每个区域的厚度沿所述多个第一电极指和所述多个第二电极指依次交错排布的方向，先减小后增大，或者，先增大后减小。
  5. 根据权利要求2-4任一项所述的体声波谐振器，其特征在于，所述介质层位于第一对相邻的所述第一电极指和所述第二电极指之间的部分的厚度变化规律，和，所述介质层位于第二对相邻的所述第一电极指和所述第二电极指之间的部分的厚度变化规律不相同。
  6. 根据权利要求5所述的体声波谐振器，其特征在于，所述第一对相邻的所述第一电极指和所述第二电极指，和，所述第二对相邻的所述第一电极指和所述第二电极指共用一个所述第一电极指或所述第二电极指。
  7. 根据权利要求1-6任一项所述的体声波谐振器，其特征在于，所述体声波谐振器还包括：基底，所述基底设置在所述压电材料层远离所述叉指换能器的一侧，所述基底围成环状。
  8. 根据权利要求1-6任一项所述的体声波谐振器，其特征在于，所述体声波谐振器还包括：层叠设置的基底和反射层；所述反射层设置于所述基底和所述压电材料层之间；
    其中，所述反射层包括层叠交替设置的第一声阻抗层和第二声阻抗层；所述第一声阻抗层的声阻抗和所述第二声阻抗层的声阻抗不同。
  9. 根据权利要求7或8所述的体声波谐振器，其特征在于，所述基底的材料包括 硅、碳化硅、金刚石、蓝宝石或氮化铝中的一种或多种。
  10. 根据权利要求1-9任一项所述的体声波谐振器，其特征在于，所述介质层的材料包括氧化硅、氮化硅、氮氧化硅或氧化铝中的一种或多种。
  11. 一种声学滤波器，其特征在于，包括多个级联的体声波谐振器；其中，所述体声波谐振器为如权利要求1-10任一项所述的体声波谐振器。
  12. 一种电子设备，其特征在于，包括声学滤波器、处理器和印刷电路板，所述声学滤波器和所述处理器均设置在所述印刷电路板上；
    其中，所述声学滤波器为如权利要求11所述的声学滤波器。
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