WO2023246214A1 - 一种功率模组及其制造方法 - Google Patents

一种功率模组及其制造方法 Download PDF

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Publication number
WO2023246214A1
WO2023246214A1 PCT/CN2023/083991 CN2023083991W WO2023246214A1 WO 2023246214 A1 WO2023246214 A1 WO 2023246214A1 CN 2023083991 W CN2023083991 W CN 2023083991W WO 2023246214 A1 WO2023246214 A1 WO 2023246214A1
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WIPO (PCT)
Prior art keywords
heat sink
chip
substrate
power module
heat
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/CN2023/083991
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English (en)
French (fr)
Inventor
陈惠斌
李霁阳
王恒
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Huawei Digital Power Technologies Co Ltd
Original Assignee
Huawei Digital Power Technologies Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Huawei Digital Power Technologies Co Ltd filed Critical Huawei Digital Power Technologies Co Ltd
Priority to EP23825870.1A priority Critical patent/EP4531096A4/en
Publication of WO2023246214A1 publication Critical patent/WO2023246214A1/zh
Priority to US18/988,140 priority patent/US20250118617A1/en
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W40/00—Arrangements for thermal protection or thermal control
    • H10W40/20—Arrangements for cooling
    • H10W40/22—Arrangements for cooling characterised by their shape, e.g. having conical or cylindrical projections
    • H10W40/226—Arrangements for cooling characterised by their shape, e.g. having conical or cylindrical projections characterised by projecting parts, e.g. fins to increase surface area
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W40/00—Arrangements for thermal protection or thermal control
    • H10W40/20—Arrangements for cooling
    • H10W40/22—Arrangements for cooling characterised by their shape, e.g. having conical or cylindrical projections
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M7/00—Conversion of AC power input into DC power output; Conversion of DC power input into AC power output
    • H02M7/003—Constructional details, e.g. physical layout, assembly, wiring or busbar connections
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02P—CONTROL OR REGULATION OF ELECTRIC MOTORS, ELECTRIC GENERATORS OR DYNAMO-ELECTRIC CONVERTERS; CONTROLLING TRANSFORMERS, REACTORS OR CHOKE COILS
    • H02P27/00—Arrangements or methods for the control of AC motors characterised by the kind of supply voltage
    • H02P27/04—Arrangements or methods for the control of AC motors characterised by the kind of supply voltage using variable-frequency supply voltage, e.g. inverter or converter supply voltage
    • H02P27/06—Arrangements or methods for the control of AC motors characterised by the kind of supply voltage using variable-frequency supply voltage, e.g. inverter or converter supply voltage using DC to AC converters or inverters
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W40/00—Arrangements for thermal protection or thermal control
    • H10W40/20—Arrangements for cooling
    • H10W40/25—Arrangements for cooling characterised by their materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W40/00—Arrangements for thermal protection or thermal control
    • H10W40/20—Arrangements for cooling
    • H10W40/25—Arrangements for cooling characterised by their materials
    • H10W40/251—Organics
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    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W40/00—Arrangements for thermal protection or thermal control
    • H10W40/20—Arrangements for cooling
    • H10W40/25—Arrangements for cooling characterised by their materials
    • H10W40/253—Semiconductors
    • H—ELECTRICITY
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    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W40/00—Arrangements for thermal protection or thermal control
    • H10W40/20—Arrangements for cooling
    • H10W40/25—Arrangements for cooling characterised by their materials
    • H10W40/258—Metallic materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W40/00—Arrangements for thermal protection or thermal control
    • H10W40/40—Arrangements for thermal protection or thermal control involving heat exchange by flowing fluids
    • H10W40/47—Arrangements for thermal protection or thermal control involving heat exchange by flowing fluids by flowing liquids, e.g. forced water cooling
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W40/00—Arrangements for thermal protection or thermal control
    • H10W40/70—Fillings or auxiliary members in containers or in encapsulations for thermal protection or control
    • H10W40/73—Fillings or auxiliary members in containers or in encapsulations for thermal protection or control for cooling by change of state
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W70/00—Package substrates; Interposers; Redistribution layers [RDL]
    • H10W70/01—Manufacture or treatment
    • H10W70/02—Manufacture or treatment of conductive package substrates serving as an interconnection, e.g. of metal plates
    • H10W70/023—Connecting or disconnecting interconnections thereto or therefrom, e.g. connecting bond wires or bumps
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W70/00—Package substrates; Interposers; Redistribution layers [RDL]
    • H10W70/60—Insulating or insulated package substrates; Interposers; Redistribution layers
    • H10W70/611—Insulating or insulated package substrates; Interposers; Redistribution layers for connecting multiple chips together
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W70/00—Package substrates; Interposers; Redistribution layers [RDL]
    • H10W70/60—Insulating or insulated package substrates; Interposers; Redistribution layers
    • H10W70/62—Insulating or insulated package substrates; Interposers; Redistribution layers characterised by their interconnections
    • H10W70/65—Shapes or dispositions of interconnections
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W70/00—Package substrates; Interposers; Redistribution layers [RDL]
    • H10W70/60—Insulating or insulated package substrates; Interposers; Redistribution layers
    • H10W70/62—Insulating or insulated package substrates; Interposers; Redistribution layers characterised by their interconnections
    • H10W70/66—Conductive materials thereof
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W70/00—Package substrates; Interposers; Redistribution layers [RDL]
    • H10W70/60—Insulating or insulated package substrates; Interposers; Redistribution layers
    • H10W70/67—Insulating or insulated package substrates; Interposers; Redistribution layers characterised by their insulating layers or insulating parts
    • H10W70/68—Shapes or dispositions thereof
    • H10W70/685—Shapes or dispositions thereof comprising multiple insulating layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00—Encapsulations, e.g. protective coatings
    • H10W74/10—Encapsulations, e.g. protective coatings characterised by their shape or disposition
    • H10W74/111—Encapsulations, e.g. protective coatings characterised by their shape or disposition the semiconductor body being completely enclosed
    • H10W74/114—Encapsulations, e.g. protective coatings characterised by their shape or disposition the semiconductor body being completely enclosed by a substrate and the encapsulations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/401—Package configurations characterised by multiple insulating or insulated package substrates, interposers or RDLs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W40/00—Arrangements for thermal protection or thermal control
    • H10W40/20—Arrangements for cooling
    • H10W40/25—Arrangements for cooling characterised by their materials
    • H10W40/255—Arrangements for cooling characterised by their materials having a laminate or multilayered structure, e.g. direct bond copper [DBC] ceramic substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W40/00—Arrangements for thermal protection or thermal control
    • H10W40/70—Fillings or auxiliary members in containers or in encapsulations for thermal protection or control
    • H10W40/77—Auxiliary members characterised by their shape
    • H10W40/778—Auxiliary members characterised by their shape in encapsulations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/071—Connecting or disconnecting
    • H10W72/073—Connecting or disconnecting of die-attach connectors
    • H10W72/07331—Connecting techniques
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/30—Die-attach connectors
    • H10W72/351—Materials of die-attach connectors
    • H10W72/352—Materials of die-attach connectors comprising metals or metalloids, e.g. solders
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/851—Dispositions of multiple connectors or interconnections
    • H10W72/853—On the same surface
    • H10W72/865—Die-attach connectors and bond wires
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/851—Dispositions of multiple connectors or interconnections
    • H10W72/874—On different surfaces
    • H10W72/884—Die-attach connectors and bond wires
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/731—Package configurations characterised by the relative positions of pads or connectors relative to package parts of die-attach connectors
    • H10W90/736—Package configurations characterised by the relative positions of pads or connectors relative to package parts of die-attach connectors between a chip and a stacked lead frame, conducting package substrate or heat sink
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/751—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires
    • H10W90/754—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires between a chip and a stacked insulating package substrate, interposer or RDL

Definitions

  • This application relates to the field of electronic power technology, and in particular to a power module and its manufacturing method, motor driver, powertrain and vehicle.
  • This application provides a power module and its manufacturing method, a motor driver, a powertrain and a vehicle.
  • a new rapid cooling structure is formed, and at the same time, on both sides of the new rapid cooling structure
  • the side is connected to the upper substrate to form a power module.
  • the high thermal conductivity connection quickly conducts the heat of the chip into the heat sink structure, thereby controlling the increase in chip temperature and reducing the temperature of the chip.
  • the transient temperature of the chip at the same time, because the high-conductivity heat sink has good thermal conductivity and temperature equalization effects, the heat from the chip is quickly evened out and conducted to the substrate, which expands the equivalent conduction area.
  • the unwired side of the chip The area of the connected heat sink is larger than the chip area, which further improves the uniform diffusion effect and reduces the temperature of the chip under steady state conditions. Due to the decrease in the chip's transient and steady-state temperatures, the chip can withstand greater current within the same area, effectively expanding the chip's power density.
  • inventions of the present application provide a power module.
  • the power module includes a first substrate, a second substrate, a first heat sink, a second heat sink and a chip.
  • the chip is placed between the first heat sink and the second heat sink that are placed opposite each other.
  • the chip is The first heat sink is connected by sintering through a high thermal conductivity material.
  • the high thermal conductivity material is used to quickly conduct the heat generated by the chip in the working state to the first heat sink.
  • the chip and the second heat sink The first heat sink and the second heat sink have high thermal conductivity and can quickly conduct the heat from the chip out.
  • the first heat sink and the second heat sink have good temperature equalization performance, which can expand the heat dissipation area, reduce local temperatures, and improve heat dissipation characteristics;
  • the first substrate is welded or sintered with the The first heat sink is connected, the second substrate is connected to the second heat sink by welding or sintering, and the first substrate and the second substrate have a larger diameter than the first heat sink and the second heat sink.
  • the heat dissipation area conducts the heat from between the first heat sink and the second heat sink to other heat dissipation devices such as the radiator, thereby reducing the temperature of the chip in a steady state.
  • the power module of the present invention can effectively reduce the temperature of the chip in transient and steady states, so that the same area of the chip can withstand various large currents, thereby improving the power density of the chip.
  • the chip is placed in the first heat disposed oppositely. between the sink and the second heat sink, the connection surface between the chip and the first heat sink is the first connection surface of the chip, the chip and the first heat sink are connected through a first material, the The first material has high thermal conductivity.
  • the first material includes but is not limited to silver paste, copper paste, silver film, etc.
  • the first material connects the chip to the first heat sink through high-temperature sintering or diffusion welding.
  • the thickness of the first material is 5 ⁇ 50um.
  • the first material also has good conductive properties and provides a transmission channel for the current flow of the chip inside the power module.
  • the first contact surface of the chip has no pins and does not require wire bonding and other operations
  • the first connection surface of the chip can be completely in contact with the first heat sink.
  • the area of the side of the first heat sink close to the chip is greater than or equal to the area of the first connection surface of the chip.
  • the first material has high thermal conductivity and can quickly conduct the heat generated by the chip during operation to the heat sink, effectively reducing the transient temperature of the chip and preventing the chip from overheating in a short period of time. temperature, the chip will be burned out; at the same time, the area of the first heat sink is greater than or equal to the area of the chip.
  • the heat sink has a good temperature equalization effect, effectively reducing the steady-state temperature of the chip and reducing the long-term working time of the chip. Therefore, under the same chip area, the chip can carry higher current, thereby increasing the power density of the chip.
  • the chip is placed between the first heat sink and the second heat sink that are oppositely arranged, and the connection surface between the chip and the second heat sink Is the second connection surface of the chip, the chip and the second heat sink are connected through a second material, the second material is solder, the second material includes but is not limited to Sn3.5Ag 0.5Cu , SnSb5, SnSb10, High Pb, AuSn, etc., the second material connects the chip to the second heat sink through welding.
  • the second connection surface of the chip has pins. Therefore, the area of the second connection surface is smaller than the area of the chip.
  • the heat sinks are provided on both upper and lower sides of the chip to take away the heat of the chip, which can fully utilize the heat dissipation area of the chip and improve heat dissipation. efficiency, thereby improving the power density of the chip.
  • the upper and lower double-sided heat sink design can balance the thermal stress mismatch to the greatest extent, reduce the structural stress received by the chip, and serve as buffer protection on both sides of the chip, extending the working life of the device and further improving the reliability of the chip. .
  • the chip is placed between the first heat sink and the second heat sink that are oppositely arranged, and the distance between the chip and the first heat sink is
  • the connection can also be through the second material, that is, the chip can be connected to the first heat sink by welding using ordinary solder.
  • the connection between the chip and the second heat sink is also
  • the first material may be used, that is, the chip may be connected to the second heat sink by sintering using a high thermal conductive material.
  • the connection between the chip and the first heat sink and the second heat sink can use the first material at the same time, that is, use a high thermal conductivity material to connect through sintering, or use the second heat sink at the same time.
  • connection method between the chip, the first heat sink and the second heat sink is flexible and has strong trialability.
  • the first heat sink and the second heat sink in the power module have high thermal conductivity and high electrical conductivity.
  • the high thermal conductivity properties can conduct the heat generated by the chip during operation to the heat sink.
  • the high electrical conductivity properties can meet the internal current flow requirements of the chip during operation and provide a channel for internal current flow.
  • the materials of the first heat sink and the second heat sink include, but are not limited to, Cu, CuMo composite materials, diamond, diamond-copper composite materials, Al-SiC composite materials and other materials with high thermal conductivity.
  • first heat sink and the second heat sink are made of materials with high thermal conductivity and high electrical conductivity, which can improve the heat dissipation performance of the chip while providing a current channel for the chip, and improve the performance of the power module. heat dissipation performance, thereby improving the power density of the power module.
  • the first substrate and the second substrate are arranged opposite to each other,
  • the first substrate is placed on a side of the first heat sink away from the chip, and the second substrate is placed on a side of the second heat sink away from the chip.
  • the first substrate and the first heat sink and the second substrate and the second heat sink are connected using a second material, that is, through solder welding; similarly, in order to improve the heat dissipation performance of the power module, you can use
  • the first substrate and the first heat sink and the second substrate and the second heat sink are connected using a first material, that is, a high thermal conductive material is used to connect through sintering.
  • the power module includes a first substrate and a second substrate, and the first substrate and the second substrate include: a first conductive layer, a second conductive layer layer and a first insulating layer located between the opposed first conductive layer and the second conductive layer.
  • the first substrate is connected to a side of the first heat sink away from the chip, and the surface of the first substrate in contact with the first heat sink is the first conductive layer of the first substrate;
  • the two substrates are connected to a side of the second heat sink away from the chip, and the surface of the second substrate in contact with the second heat sink is the first conductive layer of the second substrate.
  • the material of the first conductive layer of the first substrate and the second substrate is Cu, Al, etc., and the first conductive layer is used to provide a channel for the flow of current inside the chip; the first substrate and the first conductive layer are The material of the first insulating layer of the second substrate is an insulating material such as ceramic, and the first insulating layer is used to prevent the first conductive layer in the first substrate and the second substrate from being connected to the heat sink; The material of the second conductive layer in the first substrate and the second substrate is Cu, Al, etc., and the second conductive layer is used to protect the first insulating layer in the first substrate and the second substrate. , to prevent the first insulating layer from being broken, and at the same time, the second conductive layer has a thermal conductive effect and conducts the heat from the first insulating layer to the heat sink in contact with the second conductive layer.
  • the first substrate and the second substrate can be a copper-clad ceramic substrate (Direct Bond Copper, DBC), an active metal brazed copper substrate (AMB), such as Al2O3-AMB, Si3N4-AMB or AlN. -AMB) or Insulated Metal Substrate (IMS), etc., are not limited here.
  • DBC Direct Bond Copper
  • AMB active metal brazed copper substrate
  • IMS Insulated Metal Substrate
  • the first substrate and the second substrate may be formed of AlN-DBC, Si3N4-AMB or AlN-AMB with high thermal conductivity, which is not limited here.
  • connection surface between the chip and the second heat sink is the second connection surface of the chip, and the second connection surface of the chip has a solder joint surface.
  • the pad is embedded in the chip, and the side of the pad that is not embedded in the chip is flush with the second connection surface of the chip.
  • the pad is connected to the second heat source through a first material or a second material. sink connection. It can be understood that the side of the pad that is not embedded in the chip is flush with the second connection surface of the chip, which can make the chip fully contact with the second heat sink, improve the heat dissipation efficiency, and at the same time reduce the distance between the chip and the second heat sink.
  • the stress between the second heat sinks makes the stress on the contact surface uniform, which is beneficial to protecting the power module from damage.
  • the chip includes an insulated gate bipolar transistor chip, an insulated gate bipolar transistor chip and a diode chip packaged chip, a silicon metal oxide semiconductor field effect transistor, Silicon carbide metal oxide semiconductor field effect transistor, gallium nitride metal oxide semiconductor field effect transistor and other power semiconductor chips.
  • the chip includes at least two independent chips, and the at least two independent chips are both placed between the first heat sink and the second heat sink. , that is, the at least two independent chips share the same first heat sink and the same second heat sink. Similarly, the at least two independent chips are respectively placed between the corresponding first heat sink and the second heat sink.
  • the first heat sinks corresponding to the at least two independent chips are independent and directly connected to each other. Connection; the second heat sinks corresponding to the at least two independent chips are independent and have no connection with each other.
  • this embodiment of the invention does not limit the connection method between the independent chips and the first heat sink and the second heat sink.
  • the power module further includes: a terminal, one end of the terminal is electrically connected to the chip, and the other end of the terminal is located outside the power module. , the terminal is used for the power The connection between the chip in the module and the external circuit.
  • the power module also includes: a binding wire, one end of the binding wire is electrically connected to the chip, and the other end of the binding wire is electrically connected to the signal terminal, so that the chip and the The signal terminal is conductive. It can be understood that the signal terminal is used for the chip to communicate with external signals.
  • the power module further includes a plastic package, the first substrate and the second substrate, the first heat sink and the second heat sink
  • the sink and the chip are placed in the plastic package, and the first substrate, the second substrate, the first heat sink, the second heat sink and the chip are fixed and sealed through the plastic package.
  • at least part of the area of the plastic package body opposite to at least one of the first substrate and the second substrate is a bare area, thus eliminating the obstruction of the plastic package layer, making the first substrate and the second substrate Closer contact with the radiator facilitates heat transfer.
  • the plastic sealing body seals the power module and prevents external moisture from entering the power module, thereby preventing the power module from short circuiting.
  • the plastic sealing body seals the power module.
  • the fixation of various parts in the group improves the stability between various parts of the power module.
  • the power module further includes a first radiator and a second radiator, and the first radiator and the second radiator are arranged oppositely, so The first substrate and the second substrate, the first heat sink and the second heat sink, and the chip are arranged between the first heat sink and the second heat sink; the first heat sink and the second heat sink are arranged between the first heat sink and the second heat sink.
  • the heat sink and the first substrate are connected through a third material, and the second heat sink and the second substrate are connected through a third material.
  • the third material is a thermally conductive interface material, including but not limited to thermal silicone grease and graphite film. , silicone gel, phase change materials, etc.
  • the first radiator and the second radiator are arranged oppositely so that the power module has a double-sided cooling structure, and heat can be transmitted bidirectionally from the two surfaces of the power module to the first radiator and the second radiator.
  • the second radiator compared with the single-sided cooling structure, the double-sided cooling structure has stronger heat dissipation capacity under the same process conditions, which helps to give full play to the performance of the power semiconductor chip, increase product power density, and reduce product costs.
  • the first radiator and the second radiator are liquid-cooled radiators, and a water dissipation channel is provided inside the first radiator and the second radiator, and the water dissipation channel has an inlet. Water inlet, water outlet. The coolant enters the water channel located inside the radiator from the water inlet, absorbs the heat of the radiator, and finally flows out from the water outlet to take away all the heat.
  • embodiments of the present application provide a method for manufacturing a power module.
  • the method includes:
  • Step 1 Connect the chip to the first heat sink by sintering or welding, and connect the chip to the second heat sink by sintering or welding to form a rapid cooling unit;
  • Step 2 Connect the first substrate to the first heat sink by welding or sintering, perform terminal welding on the first substrate, and connect the chip to the terminal through binding wires;
  • Step 3 Connect the second substrate to the second heat sink by welding or sintering, and encapsulate the above structure by plastic packaging or encapsulation to form a power module;
  • the first substrate is connected to the first heat sink through a thermally conductive interface material
  • the second substrate is connected to the second heat sink through a thermally conductive interface material
  • the connecting material used when connecting by sintering, is the first material; when connecting by welding, the connecting material used is the second material.
  • an embodiment of the present application provides a motor driver.
  • the motor driver includes a capacitor and at least one power module as described in the application embodiment of the first aspect.
  • the power module terminals are connected to the capacitor. Electrical connection, the capacitor is used to provide voltage to the power module, and the power module is used to convert the direct current of the battery pack into the alternating current of the motor.
  • the motor driver includes a power module as in the application embodiment of the first aspect. Since the power module has good heat dissipation and better power density, the performance of the motor driver can be improved. Power conversion efficiency.
  • embodiments of the present application provide a powertrain, which includes a motor and a motor driver connected to the motor as described in the embodiment of the third aspect.
  • the motor driver is To provide alternating current to the motor, the motor is used to convert the alternating current from the motor driver into kinetic energy.
  • the powertrain includes the motor driver of the third application embodiment. Since the motor driver has higher power conversion efficiency, it can provide higher electrical energy to the motor, thereby The electric motor can output higher kinetic energy, so the powertrain has higher driving force.
  • embodiments of the present application provide a vehicle, which includes wheels and a powertrain as described in the embodiment of the fourth aspect connected to the wheels, and the powertrain is used to provide The wheels provide power to drive the wheels forward or backward.
  • the vehicle includes the powertrain in the application embodiment of the fourth aspect. Since the powertrain can provide higher driving force, the vehicle has higher power, which provides drivers with Provide a better driving experience.
  • Embodiments of the present application provide power modules and manufacturing methods, motor drivers, powertrains and vehicles. Since the chip is placed between the first heat sink and the second heat sink that are oppositely arranged, and the chip and the first heat sink are connected through a first material with high thermal conductivity, and through The second material connects the chip and the second heat sink, so that the heat generated by the chip during operation can be quickly conducted through the first material and the second material only to the first heat sink. and the second heat sink, thereby reducing the transient temperature of the chip. At the same time, because the first heat sink and the second heat sink have a good temperature equalizing effect, the heat from the chip can be quickly evened and conducted to the substrate connected thereto, and the heat can be transferred through the substrate through the substrate.
  • the heat is transferred to the radiator, and is eventually taken away through the radiator, thereby reducing the steady-state temperature of the core during operation, allowing the chip to withstand greater current under the same area, effectively expanding the power of the chip density.
  • the thermal stress mismatch can be balanced to the greatest extent, reducing the structural stress received by the chip, and serving as buffer protection on both sides of the chip, extending the device working life, further improving the reliability of the chip.
  • Figure 1 is a schematic structural diagram of a power module provided by Embodiment 1 of the present invention.
  • FIG. 2 is a schematic structural diagram of another power module provided by Embodiment 2 of the present invention.
  • FIG. 3 is a schematic structural diagram of another power module provided by Embodiment 3 of the present invention.
  • Figure 4 is a manufacturing method of a power module provided by Embodiment 4 of the present invention.
  • Figure 5 is a pressure sintering process for manufacturing a power module provided in Embodiment 4 of the present invention.
  • Power modules play an important role in new energy scenarios. They are the core components of power conversion circuits in new energy vehicles, smart photovoltaics and other fields. In the power conversion circuit, the power module frequently switches between the on and off states in the working state. By switching between the two states, the AC and DC voltage conversion is realized to provide the appropriate voltage for the load. However, frequent state switching will cause heat loss in the power module, including turn-on loss and turn-off loss. Both of them will bring a lot of heat to the power module, and high temperatures will reduce the conversion efficiency of the power chip in the power module.
  • the current industry makes full use of both sides of the chip and proposes a double-sided heat dissipation structure. That is, by setting radiators on both sides of the power chip at the same time, the heat of the power chip is exported through two radiators.
  • the current mainstream double-sided heat dissipation structure first attaches a three-layer structure substrate to both sides of the chip before installing the heat sink, such as a copper-clad ceramic substrate (Direct Bond Copper (DBC), active metal brazed copper (AMB, such as Al2O3-AMB, Si3N4-AMB or AlN-AMB) or insulated metal substrate (Insulated metal substrate, IMS), etc., the upper and lower sides of the three-layer substrate
  • the layer is made of electrically conductive and thermally conductive material.
  • the lower layer close to the power chip can not only provide a channel for the flow of current inside the power chip, but also can export the heat generated by the power chip in a timely manner.
  • the upper layer close to the radiator can mainly provide protection for the power chip. , to improve the immunity of the power chip from external impacts, and the middle layer is an insulating layer, which can prevent the conductive and thermal conductive material of the lower layer from being connected to the radiator, and prevent problems such as short circuits in the chip.
  • the lower layer of the substrate such as DBC
  • the lower copper layer is relatively thin and is limited in improving the transient thermal performance
  • the lower layer is directly connected to the middle layer of the substrate.
  • the insulating material used in the middle layer of the substrate is generally For example, ceramics have poor heat dissipation performance, resulting in a small effective heat diffusion area and suboptimal steady-state thermal performance.
  • the heat in the power chip is discharged in a timely manner, and thermal conductive conductive pillars are used to connect with the power chip to further improve the heat dissipation performance of the power module.
  • CTE Coefficient thermal expansion
  • this application provides a new power module structure and manufacturing method, motor driver, powertrain and vehicle.
  • heat sinks with high thermal conductivity and high electrical conductivity are attached to both sides of the chip, the chip is placed between the first heat sink and the second heat sink arranged oppositely, and the first material with high thermal conductivity is used to pass through
  • the chip is connected to the first heat sink by sintering, and a second material such as ordinary solder is used to connect the chip to the second heat sink by welding to construct a new rapid cooling unit, and then the rapid cooling unit is Placed between the oppositely arranged first substrate and the second substrate, the rapid cooling unit is connected to the first substrate and the second substrate by welding or sintering to finally form a new power module structure.
  • the high thermal conductivity material can quickly conduct heat generated during chip operation to the heat sink, and the first heat sink and the second heat sink also have high thermal conductivity and can quickly conduct heat from the chip. out, thereby reducing the transient temperature of the chip; at the same time, the first heat sink and the second heat sink have good temperature equalization characteristics, and can evenly spread the heat to the entire surface of the first heat sink and the second heat sink. Thereby expanding the heat dissipation area, reducing local temperature, and improving heat dissipation efficiency. Furthermore, the first heat sink and the second heat sink are connected to the first substrate and the second substrate respectively, and the first substrate and the second substrate are connected to each other.
  • the heat dissipation area is greater than or equal to the areas of the first heat sink and the second heat sink, and the first substrate and the second substrate further diffuse the heat from the first heat sink and the second heat sink to a larger area.
  • the heat is finally conducted to the radiators connected to the first substrate and the second substrate respectively.
  • the radiators take the heat away from the power module, thereby reducing the temperature of the power module and reducing the overall temperature of the power module. Describe the temperature of the chip under steady state operation. Therefore, the power module in this application can effectively reduce the temperature of the chip in both transient and steady states, so that the same area of the chip can withstand various large currents, thereby increasing the power density of the chip, thereby enabling the use of the chip.
  • Power modules enable higher performance in motor drives, powertrains and vehicles.
  • the power module in this application adopts heat sink connections on both the upper and lower sides of the chip, so that the chip has a symmetrical structure, which can balance the thermal stress mismatch to the greatest extent and reduce the structural stress on the chip.
  • the first heat sink and the second heat sink serve as buffer structures to protect both sides of the chip, extending the working life of the device and further improving the reliability of the chip.
  • the first embodiment provided by this application is as shown in Figure 1.
  • the first embodiment of this application provides a power module,
  • the power module includes a chip 1, a first heat sink 2, a second heat sink 3, a first substrate 4, and a second substrate 5.
  • the chip 1 is placed between the first heat sink 2 and the second heat sink 3 which are oppositely placed.
  • the chip 1 and the first heat sink 2 are connected by sintering using the first material 12 .
  • the first material 12 has high thermal conductivity and can quickly transfer the heat generated during the operation of the chip 1 out of the chip 1 to the first heat sink 2, thereby reducing the transient temperature of the chip 1.
  • the first heat sink 2 also has high thermal conductivity properties and can quickly conduct heat from the chip 1 to the first substrate 4, and finally the first substrate 4 conducts the power module.
  • the chip 1 and the second heat sink 3 are connected by welding using a second material 31.
  • the second heat sink 3 has high thermal conductivity and can quickly conduct heat from the chip 1 to the connection.
  • the second substrate 5 finally conducts heat out of the power module.
  • the first heat sink 2 and the second heat sink 3 have good temperature equalization characteristics, which can well diffuse the heat from the chip 1 into the entire heat sink, thereby increasing the heat dissipation area and improving the heat dissipation efficiency.
  • the first heat sink 2 and the first substrate 4 are connected by welding using a second material 24
  • the second heat sink 3 and the second substrate 5 are connected by welding using a second material 53 .
  • the first substrate 4 and the second substrate 5 have a larger area than the first heat sink 2 and the second heat sink 3, further increasing the heat dissipation area, thereby increasing the heat dissipation area.
  • the first heat sink 2 and the second heat sink 3 are used to wrap the chip 1 in a vertically symmetrical manner, the thermal stress mismatch is balanced to the maximum extent, the structural stress on the chip is reduced, and the chip is protected. Chip 1 is protected from external damage, thereby delaying the working life of the device and further improving chip reliability.
  • the first material 12 in the first embodiment has high thermal conductivity.
  • the high thermal conductivity material can be formed of silver paste, copper paste or silver film.
  • the silver paste may include at least one of micrometer silver particle paste (Micrometer silver particle paste) and nanometer silver particle paste (Nanometer silver particle paste).
  • micron silver paste refers to silver paste made using micron silver particles and organic solvents, which is low-cost and safe.
  • Common processing methods include pressure sintering, high-temperature sintering and diffusion welding.
  • the sintered material has high density, the interface of the joined body is firmly joined, and the joint reliability is high.
  • Nano-silver paste is a silver paste made of nano-silver particles and organic solvents. It is costly and poses operational safety risks due to nano-particles.
  • the first material 12 has a thickness of 5 to 50 ⁇ m.
  • the first material 12 has conductivity and can provide a channel for current flow inside the chip 1 .
  • the elastic modulus, coefficient of thermal expansion (CTE), etc. of the sintered material can be adjusted by adding materials to the sintered material.
  • the sintered material includes a host material and a filler (Filler) filled in the host material; the host material includes at least one of silver paste, copper paste or silver film, and the filler is made of a filler with good adhesion to the host material.
  • the thermal expansion coefficient of the filler is smaller than that of the main body material, thereby improving the joint reliability of sintering.
  • the second material 24 in the first embodiment is an ordinary soldering material, which can be high-temperature solder, such as high-lead solder, Au-based solder, or medium-temperature solder, such as SAC305, Sn-Sb type (SnSb5 ,SnSb10).
  • the thickness of the solder has an important impact on the reliability of the solder joint. In order to ensure the controllability of the solder thickness and the uniformity of the thickness.
  • the welding materials used in the welding method in this embodiment can be the same, for example, the connection between the chip 1 and the second heat sink 3 , the connection between the first heat sink 2 and the first substrate 4
  • the connection and the connection between the second heat sink 3 and the second substrate 5 can be connected by the same solder, so that during the manufacturing process of the power module, the chip 1 and the second heat sink
  • the connection between 3, the connection between the first heat sink 2 and the first substrate 4, and the welding between the second heat sink 3 and the second substrate 5 can be completed by one reflow soldering. , which can simplify process steps and save costs.
  • connection between the chip 1 and the second heat sink 3, the connection between the first heat sink 2 and the first substrate 4, and the second heat sink 3 Different solders can also be used for the connection with the second substrate 5, which is not limited here.
  • the connection between the chip 1 and the second heat sink 3 High-temperature solder can be used, such as High Pb solder, Au-based solder (such as AuSn), etc., for the connection between the first heat sink 2 and the first substrate 4 and the connection between the second heat sink 3 and the second heat sink 3.
  • the connection between the substrates 5 can use medium temperature solder, such as SAC305, Sn-Sb solder, etc.
  • connection between the chip 1 and the first heat sink 2 can also be through the second material 24, that is, the chip 1 can be connected to the first heat sink 2 by welding using ordinary welding materials.
  • the first heat sink 2 is connected.
  • the chip 1 and the second heat sink 3 can also be connected through the first material 12, that is, the chip 1 can be connected to the first heat sink 3 by sintering using a high thermal conductive material.
  • the second heat sink 3 is connected.
  • connection between the chip 1 and the first heat sink 2 and the second heat sink 3 can use the first material 12 at the same time, that is, use a high thermal conductive material to connect through sintering, or use
  • the second material 24 is connected by welding using ordinary soldering materials as mentioned above; or the connection between the chip 1 and the first heat sink 2 and the second heat sink 3 adopts the method.
  • the way of mixing the first material 12 and the second material 24 and the specific usage scheme can be designed according to the specific application scenarios. It should be noted that the first material 12 and the second material 24 are conductive and can provide a channel for the current flow of the chip 1 inside the power module. It can be understood that the connection method between the chip 1 and the first heat sink 2 and the second heat sink 3 is flexible and has strong trialability.
  • the first heat sink 2 and the second heat sink 3 have high thermal conductivity, and the first heat sink 2 and the third heat sink 3 can quickly heat the chip.
  • the heat in 1 is quickly exported, reducing the heat of the chip.
  • the materials of the first heat sink 2 and the second heat sink 3 include, but are not limited to, Cu, CuMo composite materials, diamond, diamond-copper composite materials, Al-SiC composite materials and other materials with high thermal conductivity.
  • the first heat sink 2 and the second heat sink 3 also have conductive properties. When the chip 1 is working, current will flow inside.
  • the first heat sink 2 and the second heat sink 3 A current channel can be provided for the internal current of the chip 1 .
  • the first heat sink 2 and the second heat sink 3 have dual characteristics of high thermal conductivity and high electrical conductivity, which can not only transfer the heat from the chip 1 to the chip 1 in a timely manner, but also reduce the heat of the chip 1.
  • a channel can be provided for the flow of current inside the chip 1 .
  • the relatively symmetrical arrangement of the first heat sink 2 and the second heat sink 3 can balance the thermal stress mismatch to the greatest extent, reduce the structural stress on the chip, and protect the chip 1 from external damage. Thereby delaying the working life of the device and further improving chip reliability.
  • the chip 1 is placed in the first heat sink 2 and the second heat sink 3.
  • the chip When the chip is working, it will quickly switch between the on state and the off state. Switch, thereby converting the input AC voltage into a DC voltage or converting the input DC voltage into an AC voltage. Since the chip 1 has conduction loss in the on state and turn-off loss in the off state, the conduction Both loss and turn-off loss generate a large amount of heat, so the first heat sink 2 and the second heat sink 3 are required to quickly dissipate the heat in the chip 1 .
  • the chip 1 may be an insulated gate bipolar transistor (IGBT: Insulated Gate Bipolar Transistor) chip, a chip of an insulated gate bipolar transistor (IGBT: Insulated Gate Bipolar Transistor) and a diode (diode), or silicon (Si).
  • IGBT Insulated Gate Bipolar Transistor
  • IGBT Insulated Gate Bipolar Transistor
  • Si silicon
  • SiC silicon carbide
  • MOSFET metal-oxide semiconductor field-effect transistor
  • GaN gallium nitride
  • the chip 1 has a first connection surface and a second connection surface, and the connection surface between the chip 1 and the second heat sink 3 is the second connection surface of the chip 1.
  • the second connection surface of the chip 1 has a bonding pad 11.
  • the bonding pad 11 is embedded in the chip 1.
  • the side of the bonding pad 11 that is not embedded in the chip 1 is connected to the chip 1.
  • the second connection surface of the chip 1 is flush.
  • the bonding pad 11 is connected to the second heat sink 3 through the first material or the second material.
  • the side of the pad that is not embedded in the chip 1 is flush with the second connection surface of the chip 1 so that the chip 1 is in full contact with the second heat sink 3, expanding the heat dissipation area and improving heat dissipation efficiency. while reducing the chip
  • the stress between the second heat sink 3 and the second heat sink 3 makes the stress on the contact surface uniform, which is beneficial to protecting the power module from damage and improving the reliability of the power module.
  • the chip 1 has a first connection surface and a second connection surface, and the connection surface between the chip 1 and the second heat sink 3 is also the first connection surface of the chip 1, that is, It adopts a flip-chip heat dissipation structure.
  • the chip 1, the first heat sink 2 and the second heat sink 3 form a rapid cooling unit, and then the rapid cooling unit is placed on the oppositely arranged first substrate 4 and the second heat sink 3.
  • the first substrate 4 and the second substrate 5 have a three-layer structure: an upper layer, a middle layer, and a lower layer.
  • the upper layer and the lower layer are made of materials with electrical and thermal conductivity properties, and the middle layer is made of materials with insulating properties.
  • the first substrate 4 includes a first conductive layer 41, a first insulating layer 42 and a second conductive layer 43;
  • the second substrate 5 includes a first conductive layer 51, a first insulating layer 52 and a second conductive layer.
  • Layer 53
  • the first substrate 4 and the second substrate 5 choose the same structure and material composition.
  • the internal structure and the functions of each part are introduced in detail. Since the structures and functions of the first substrate 4 and the second substrate 5 are the same, the first substrate 4 is used as an example for introduction here.
  • the first insulating layer 42 of the first substrate 4 is placed between the first conductive layer 41 and the second conductive layer 43 that are oppositely arranged.
  • the first conductive layer is connected to the first heat sink 2 through a first material or a second material.
  • the first conductive layer 41 in the first substrate 4 has conductivity and can be the chip. 1 provides a channel for the flow of internal current; at the same time, the first conductive layer also has thermal conductivity and can conduct heat from the chip 1 in a timely manner. Therefore, the material of the first conductive layer 41 can be Cu, Al and other materials. , the specific material used can be selected according to the actual situation, and is not limited here.
  • the first insulating layer 42 in the first substrate 4 has insulating properties, because the current in the chip 1 flows through the first conductive layer 41 in the first substrate 4, and the second conductive layer 43 and The radiator 7 is connected to each other.
  • the radiator 7 generally uses cooling liquid to dissipate the heat in the power module to the outside world. Therefore, the radiator 7 is in a humid environment. If the current in the first conductive layer 41 passes through the second The conductive layer 43 eventually flows into the heat sink 7, which will cause problems such as short circuit of the chip 1. Therefore, the first insulating layer 42 is required to connect the first conductive layer 41 and the second conductive layer 43. Insulation isolation is provided to prevent the current in the chip 1 from entering the heat sink 7 .
  • the second conductive layer 43 in the first substrate 4 is connected to the heat sink 7 through a third material 47 , which may be a thermally conductive interface material.
  • the second conductive layer 43 is used to protect the first insulating layer 42 in the first substrate 4 and prevent the first insulating layer 42 from being broken. At the same time, the second conductive layer 43 has a thermal conductive effect and will prevent the heat from coming out.
  • the heat of the first insulating layer 42 is conducted to the radiator 7 in contact with the second conductive layer 43 , and the heat is eventually taken away by the coolant in the radiator 7 .
  • the material of the second conductive layer 43 may be Cu, Al, or other materials.
  • the first substrate 4 and the second substrate 5 can be a copper-clad ceramic substrate (Direct Bond Copper, DBC) or an active metal brazed copper substrate (AMB, such as Al2O3-AMB, Si3N4-AMB). or AlN-AMB) or insulated metal substrate (Insulated metal substrate, IMS), etc., which are not limited here.
  • DBC Direct Bond Copper
  • AMB active metal brazed copper substrate
  • IMS Insulated metal substrate
  • the first substrate and the second substrate may be formed of AlN-DBC, Si3N4-AMB or AlN-AMB with high thermal conductivity, which is not limited here.
  • the power module further includes a first terminal 8 and a second terminal 10.
  • One end of the first terminal 8 is connected to the first substrate 4 by welding using the second material 84.
  • the other end of the first terminal 8 is connected to the outside of the power module for connection with an external circuit; one end of the second terminal 10 is welded to the second substrate 5 using the second material 105 connected in a way, the other end of the second terminal 10 is connected with the The outside of the power module is used for connection with external circuits.
  • the materials and processes of the first terminal 8 and the second terminal 10 are not limited here.
  • the connection between the first terminal 8 and the first substrate 4 and the connection between the second terminal 10 and the second terminal 10 are not limited here. There are no specific restrictions on the materials and processes used to connect the substrate 5.
  • the first material can be connected by sintering or the second material can be connected by welding, or the two methods can be mixed, depending on the specific scenario. match.
  • the power module further includes a binding wire 13.
  • the binding wire 13 is used to connect the chip 1 to the second terminal 10.
  • the binding wire 13 is a wire. , so that the chip 1 can interact with external signals through the second terminal 10 .
  • One end of the binding wire 13 is electrically connected to the chip 1 by bonding, and the other end of the binding wire 13 is electrically connected to the first substrate 4 by bonding, specifically with the first substrate 4
  • the pads on the chip are electrically connected by bonding, and the second terminal 10 is also electrically connected to the pad, and the second terminal 10 can be electrically connected to the chip 1 .
  • the bonding method in the first embodiment is an existing method of connecting a metal wire and a bonding pad.
  • the metal wire is tightly welded to the bonding pad using heat, pressure or ultrasonic energy.
  • the two ends of the bonding wire 13 and the pads and the chip 1 can also be electrically connected in other ways, such as through conductive glue or welding.
  • the power module after the internal interconnection is completed, the power module also needs a plastic packaging body 9 for plastic packaging.
  • the plastic packaging body 9 combines the first heat sink 2 and the second heat sink 3, the chip 1, the first substrate 4 and The second substrate 5 and the binding wires 13 are all wrapped around the terminals 11 inside the power module to form a power semiconductor package, thereby providing a closed environment for the entire power module to prevent external moisture or liquid from entering.
  • the chip 1 shown is short-circuited.
  • the plastic sealing body fixes various parts of the power module, thereby improving the stability of the various parts of the power module.
  • the plastic packaging material used in the plastic packaging body 9 uses a low-modulus plastic packaging material, which can improve the reliability of the power module.
  • the plastic packaging material can be formed of a material with an elastic modulus between 0.5GPa and 20GPa, such as epoxy plastic packaging material, etc. No limitation is made here.
  • the upper and lower surfaces of the power module can be ground to make the two sides of the power module parallel. Of course, you can also grind without grinding according to your needs.
  • the terminals 11 exposed outside the power module can also be tin-plated to prevent oxidation of the terminals and increase the solderability of the terminals.
  • the power module further includes a first radiator 6 and a second radiator 7.
  • the first radiator 6 and the second radiator 7 can ultimately dissipate the heat generated by the chip 1. .
  • the first heat sink 6 and the second heat sink 7 need to be connected to the power module.
  • the first radiator 6 is arranged opposite to the second radiator.
  • the first radiator 6 and the first substrate 4 are connected through the third material 46 .
  • the second radiator 7 is connected to the second substrate 4 . 5 are connected through the third material 75.
  • the third material 46 includes but is not limited to thermal silicone grease, graphite film, silicone gel, phase change material and other thermally conductive interface materials.
  • the materials selected for the third material 46 and the third material 75 may be the same or different, and are not limited here.
  • the first radiator 6 and the second radiator 7 have heat dissipation fins.
  • the heat dissipation fins can increase the heat dissipation area and improve the heat dissipation efficiency of the radiator.
  • the first radiator 6 and the second radiator 7 are arranged oppositely, so that the power module has a double-sided cooling structure, and the heat can be exported from the two surfaces of the power module.
  • the single-sided cooling structure using only one radiator can improve the heat dissipation efficiency of the power module and further improve the heat dissipation efficiency of the power module.
  • the double-sided symmetrical structure can also minimize thermal stress imbalance, reduce the risk of damage to the power module, and improve the reliability of the power module.
  • the first radiator 6 and the second radiator 7 are liquid-cooled radiators, and water dissipation channels are provided inside the first radiator 6 and the second radiator 7.
  • the water dissipation channel has a water inlet and a water outlet.
  • the coolant enters the water channel located inside the radiator from the water inlet, absorbs the heat of the radiator, and finally flows out from the water outlet to take away all the heat.
  • the coolant can also be oil-cooled, which has more advantages than traditional coolant (water).
  • the oil-cooled one has sensitive heat balance ability and super heat conduction ability, ensuring that the chip 1 is at the optimal working temperature; the ultra-wide working temperature range eliminates the need to add antifreeze in low-temperature environments, avoiding corrosion such as cavitation, scale, and electrolysis.
  • the coolant in the first radiator 6 can enter through the connecting piece. to the second radiator 7 to improve the utilization rate of the coolant.
  • the second embodiment of the present application provides another power module as shown in Figure 2.
  • the power module includes two independent chips, namely a first chip 1 and a second chip 14.
  • the first chip The chip 1 is placed between the first heat sink 2 and the second heat sink 3 that are placed opposite each other, and the second chip 14 is placed between the third heat sink 15 and the fourth heat sink 16 that are placed opposite.
  • the materials used in the first heat sink 2 and the second heat sink 3 as well as the third heat sink 15 and the fourth heat sink 16 are in the same range as in the first embodiment of the present application.
  • the connection between the chip 1 and the first heat sink 2 and the second heat sink 3 is the same as the first embodiment of the present application.
  • connection between the second chip 14 and the third heat sink 15 and the third heat sink 3 is the same as that in the first embodiment of the present application.
  • the scope of the connections between the four heat sinks 16 is the same as that of the first embodiment of the present application.
  • An independent cooling structure is provided for two independent chips 1 and 14, and appropriate heat sink materials and connection methods can be set according to the different characteristics of the two chips. The method is flexible and adaptable.
  • other parts such as the first substrate 4, the second substrate 5, the plastic package 9, the first terminal 8, the second terminal 10, the binding wire 13, the first heat sink 6, the second heat sink 7.
  • the connection part is the same as in Embodiment 1 of the present application, so it will not be described again here.
  • the power module in the embodiment of the present application may also include multiple chips, and the number of chips is greater than two. The embodiment of the present application does not limit the number of chips in the power module.
  • the third embodiment of the present application provides another power module as shown in Figure 3.
  • the power module includes two independent chips, namely a first chip 1 and a second chip 14.
  • the chip 1 and the chip 14 are jointly placed between the same first heat sink 2 and the same second heat sink 3 which are oppositely arranged.
  • the first heat sink 2 and the second heat sink 3 and the materials used are in the same scope as in the first embodiment of the present application.
  • the first chip 1 and the second chip 14 are in the same range as the first heat sink 2 and the second heat sink 3 .
  • the scope of the connection between the heat sink 2 and the second heat sink 3 is the same as that of the first embodiment of the present application. Setting the same cooling structure on the two independent chips 1 and 14 can reduce process complexity, improve efficiency, and save manufacturing costs.
  • the power module in the embodiment of the present application may also include multiple chips, and the number of chips is greater than two. The embodiment of the present application does not limit the number of chips in the power module.
  • the fourth embodiment of the present application provides a method for manufacturing a power module. As shown in Figure 4, the method includes:
  • the manufacturing method of the power module further includes connecting the first substrate to the first radiator through a thermally conductive interface material, and connecting the second substrate to the second radiator through a thermally conductive interface material.
  • the connecting material used when connecting by sintering, is the first material; when connecting by welding, the connecting material used is the second material.
  • the fourth embodiment When connecting through sintering in the fourth embodiment, it can be pressure sintering, and the pressure sintering step is as follows. Taking the connection between the chip and the first heat sink as an example, as shown in Figure 5, the description is as follows:
  • the sintered material can be printed on the first heat sink using a stencil printing process or a screen printing process. Compared with the screen printing process, the stencil printing process is lower in cost and simpler to produce.
  • the thickness of the first material can be controlled between 30 ⁇ m and 160 ⁇ m, and the specific design can be based on the actual product, which is not limited here;
  • Pre-drying the printed first material The purpose of pre-drying the printed first material is to prevent the sintered material from collapsing during pressure sintering.
  • the first material 13 printed on the first heat sink can be pre-dried in an N2 atmosphere at a temperature of 100°C to 180°C for 5min to 40min;
  • S13 Mount the chip on the first material of the first heat sink and pressurize it.
  • the chip can be sucked up first through vacuum adsorption, and then the first heat sink can be aligned through the image recognition system, and then the chip can be fixed on the dried first material and pressurized.
  • the temperature is controlled at 100°C ⁇ 180°C
  • the pressure is controlled at 0.1MPa ⁇ 10MPa
  • the time is controlled at 10ms ⁇ 999ms;
  • Pressure sintering refers to applying pressure to the joined body at high temperature, thereby increasing the density of the sintered body, promoting atomic diffusion between the particles of the sintered material and at the interface between the sintered material and the joined body, enhancing the bonding strength and making the joint more reliable sex.
  • the pressure sintering process used in this application is not limited and can be any known method.
  • the sintering conditions for pressure sintering are: the sintering temperature is controlled at 200°C ⁇ 300°C, the applied pressure is controlled at 5MPa ⁇ 30MPa, and the sintering time is controlled at 1min ⁇ 10min;
  • Cool the sintered first heat sink and chip under pressure If the pressure sintering process is performed in a protective atmosphere or vacuum environment, the cooling process is also performed in a protective atmosphere or vacuum environment.
  • the cooling conditions can be as follows: the applied pressure is controlled at 5MPa ⁇ 20MPa, and the cooling time is controlled at 1min ⁇ 10min;
  • S16 Clean the first heat sink on which the chip is mounted to remove residual organic matter.
  • a plasma treatment process or an organic solvent cleaning process is used to remove residual organic matter in the first heat sink, etc., to increase the interface bonding of subsequent plastic packaging materials, prevent delamination of plastic packaging materials, and further improve the reliability of the power module.
  • the power module manufactured by the manufacturing method of the fourth embodiment has the same advantages as the power modules in all the above embodiments, and therefore will not be described again.
  • Each part used in the fourth embodiment includes a chip, a first heat sink, a second heat sink, a first substrate, a second substrate, a first material, a second material, a third material, a first heat sink, a
  • the materials used for the heat sink, plastic package, terminals, etc. are the same as those of the power modules in all the above embodiments, so they will not be described again.
  • the fifth embodiment of the present application provides a motor driver.
  • the motor driver includes a capacitor and at least one power module as described in any of the above application embodiments.
  • the power module terminal is connected to the capacitor. connection, the capacitor is used to provide voltage to the power module, and the motor driver is used to convert the DC power of the battery pack into the AC power of the motor.
  • the structure and working principle of the power semiconductor module can be referred to the description of the above embodiments, and will not be described again in the embodiments of this application.
  • the motor driver provided by the embodiment of the present application includes the power module in any of the above application embodiments, and the power module adopts a double-sided symmetrical new cooling structure, so that the The heat dissipation performance of the power module is greatly improved. Therefore, a power chip with the same area using the power module according to the embodiment of the present application can withstand higher current, thereby obtaining a higher power density. However, the power chip using this power module can withstand higher current. The motor driver can therefore output higher power and have higher power conversion efficiency. At the same time, because the power module in the embodiment of the present application can balance the thermal stress mismatch to the greatest extent and reduce the structural stress on the chip, the chip in the power module has high reliability and a long working life. Therefore, the above The motor driver of the power module in any application embodiment has high reliability, Can work stably for a long time.
  • the sixth embodiment of the present application provides a powertrain, which includes a motor and a motor driver as described in the fifth application embodiment connected to the motor, where the motor driver is used to The motor is provided with alternating current for converting the alternating current from the motor driver into kinetic energy.
  • the structure and working principle of the power module in the motor driver can be referred to the description of the above embodiments, and will not be described again in the embodiments of this application.
  • the powertrain provided by the embodiment of the present application includes the motor driver in the fifth embodiment of the application. Since the motor driver has higher power conversion efficiency, it can provide the motor with higher power. Electric energy, so that the motor can output higher kinetic energy, so the powertrain has higher driving force. At the same time, since the motor driver is not easily damaged and has high reliability, it helps to improve the stability and reliability of the powertrain system.
  • a seventh embodiment of the present application provides a vehicle.
  • the vehicle includes wheels and a powertrain as described in the sixth application embodiment connected to the wheels.
  • the powertrain is used to provide the The wheels provide the power to move said wheels forward or backward.
  • the vehicle may be an electric vehicle/electric vehicle (EV), a pure electric vehicle (PEV/BEV), a hybrid electric vehicle (HEV), a range-extended electric vehicle (REEV), or a plug-in hybrid electric vehicle (PHEV), new energy vehicle (New Energy Vehicle), etc.
  • EV electric vehicle/electric vehicle
  • PEV/BEV pure electric vehicle
  • HEV hybrid electric vehicle
  • REEV range-extended electric vehicle
  • PHEV plug-in hybrid electric vehicle
  • New Energy Vehicle new energy vehicle
  • the vehicle includes the powertrain in the sixth application embodiment. Since the powertrain can provide higher driving force, the vehicle has higher power and provides drivers with better driving force. driving experience. At the same time, because the powertrain has higher stability and reliability, the vehicle as a whole has higher stability and reliability, providing drivers with higher safety while reducing the maintenance of the entire vehicle. cost.

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Abstract

本申请提供了一种功率模组及其制造方法、电机驱动器、动力总成以及车辆。所述功率模组包括相对设置的第一基板、第二基板、第一热沉、第二热沉和芯片；所述芯片置于相对设置的所述第一热沉与所述第二热沉之间，所述第一热沉以及第二热沉各自与芯片通过烧结或焊接连接，所述第一基板与所述第二基板分别通过焊接或烧结的方式与第一热沉与第二热沉连接；所述第一热沉与所述第二热沉具有高导电导热特性，将来自芯片的热量快速均匀的传导只第一基板与第二基板中，有助于降低芯片的瞬态和稳态温度，在同样芯片面积下，可以通过更多电流，有效提高芯片的功率密度。

Description

一种功率模组及其制造方法 技术领域
本申请涉及电子电力技术领域，尤其涉及一种功率模组及其制造方法、电机驱动器、动力总成与车辆。
背景技术
近年来，绿色能源日益发展，逐渐成为解决能源危机的主要手段，电动汽车作为绿色能源典型应用，因此得到了蓬勃发展，市场对车载电机驱动装置的需求逐年增长，而功率模块作为功率转换的核心器件，已经吸引了越来越多的关注。与此同时，出于节能环保的目的和获得电池电动车更长行驶里程的目的，就要求功率模组具有更高的电能转换效率，出于节能和低成本的需求也迫切的要求功率模块更加轻型化和小型化。但是，这种需求给功率模块的发展带来了巨大的挑战，因为轻型化和小型化会导致模块电流密度的增加，这会导致模块内部会产生较高的热量，从而引起结温的升高。如果产生的热量不能及时排出，较高的结温会影响功率模块整体的热机械性能和可靠性。
发明内容
本申请提供了一种功率模组及其制造方法、电机驱动器、动力总成与车辆。通过将芯片放置于高导电导热的热沉之间，并采用高导热连接(烧结或扩散焊接)的方式将芯片与热沉连接，形成新的快速冷却结构，同时在新的快速冷却结构的两侧连接上基板形成功率模组。当芯片在工作状态下由于快速的导通与关断而产生功率损耗，导致芯片温度上升，所述高导热连接快速的将芯片的热量传导入热沉结构中，从而控制芯片温度升高，降低芯片的瞬态温度；同时由于高导热沉具有良好的导热效应与均温效应，将来自芯片的热量快速均温并传导至基板，使等效传导面积扩大，同时芯片的未打线的一面所连接的热沉的面积大于芯片面积，进一步提高的均匀扩散效应，降低了芯片在稳态情况下的温度。由于芯片在瞬态与稳态温度的下降，使得芯片在同等面积下，可以承受更大的电流，有效扩大了芯片的功率密度。
为此本申请的实施例采用如下的技术方案：
第一方面，本申请实施例提供了一种功率模组。所述功率模组包括第一基板、第二基板、第一热沉、第二热沉和芯片，所述芯片置于相对放置的第一热沉与第二热沉之间，所述芯片与第一热沉通过高导热材料采用烧结的方式连接，所述高导热材料用于将芯片在工作状态下产生的热量迅速的传导到所述第一热沉中，所述芯片与第二热沉通过高导热材料采用烧结的方式连接或普通的软钎料采用焊接的方式连接，所述第一热沉与所述第二热沉具有高导热性能，可以迅速的将来自芯片的热量传导出去，降低瞬态温度，同时第一热沉与第二热沉具有很好的均温性能，可以扩大散热面积，降低局部温度，提高散热特性；所述第一基板通过焊接或烧结的方式与所述第一热沉连接，所述第二基板通过焊接或烧结的方式与所述第二热沉连接，所述第一基板与所述第二基板具有大于所述第一热沉与第二热沉的散热面积，分别将来自第一热沉与第二热沉之间的传导至散热器等其他散热装置中，降低了芯片在稳态下的温度。本发明的中的功率模组可以有效的降低芯片在瞬态与稳态下的温度，使得芯片的同等面积下，可以承受各大的电流，提高了芯片的功率密度。
结合第一方面，在第一种可能的实施方式中，所述芯片置于相对设置的所述第一热 沉与所述第二热沉之间，所述芯片与第一热沉的连接面为所述芯片的第一连接面，所述芯片与所述第一热沉通过第一材料连接，所述第一材料具有高导热性能，所述第一材料包括但不限于银膏、铜膏、银膜等，所述第一材料通过高温烧结或者扩散焊将所述芯片与所述第一热沉连接，所述第一材料厚度为5～50um。其次，第一材料还具有良好的导电特性，为芯片在功率模组内部的电流流动提供传输通道。由于所述芯片的第一接触面没有引脚，不需要进行打线等操作，因此所述芯片的第一连接面可以完全与所述第一热沉接触，同时为了充分利用所述第一热沉的均温特性，一般的，所述第一热沉靠近所述芯片的一面的面积大于等于所述芯片的第一连接面的面积。可以理解的，所述第一材料具有高导热性能，可以迅速的将芯片在工作中产生的热量传导到热沉当中，有效的降低芯片的瞬态温度，防止芯片在短时间内出现过高的温度，将芯片烧坏；同时所述第一热沉的面积大于等于所述芯片的面积，所述热沉具有很好的均温效果，有效的降低芯片的稳态温度，降低芯片长时间工作的热量，因此在同样的芯片面积下，所述芯片可以承载更高的电流，从而提高了芯片的功率密度。
结合第一方面，在第二种可能的实施方式中，所述芯片置于相对设置的所述第一热沉与所述第二热沉之间，所述芯片与第二热沉的连接面为所述芯片的第二连接面，所述芯片与所述第二热沉通过第二材料连接，所述第二材料为软钎料，所述第二材料包括但不限于Sn3.5Ag 0.5Cu、SnSb5,、SnSb10,、High Pb、AuSn等，所述第二材料通过焊接将所述芯片与所述第二热沉连接。所述芯片的第二连接面上具有引脚，因此，第二连接面的面积小于芯片的面积。可以理解的，结合第一方面中的第一种可能的实施方式，在芯片的上下两侧均有所述热沉将芯片的热量带走，可以充分的利用所述芯片的散热面积，提高散热效率，进而提高芯片的功率密度。同时采用上下双面的热沉设计，能够最大限度的平衡热应力错配，减小芯片收到的结构应力，作为缓冲保护在芯片的两侧，延长器件的工作寿命，进一步提高芯片的可靠性。
结合第一方面，在第三种可能的实施方式中，所述芯片置于相对设置的所述第一热沉与所述第二热沉之间，所述芯片与所述第一热沉的连接也可以通过所述第二材料，即所述芯片可以利用普通的软钎料通过焊接的方式与所述第一热沉连接，同理，所述芯片与所述第二热沉的连接也可以通过所述第一材料，即所述芯片可以利用高导热材料通过烧结的方式与所述第二热沉连接。进一步的，所述芯片与所述第一热沉以及所述第二热沉的连接可以同时使用所述第一材料，即同时使用高导热材料通过烧结的方式连接，或者同时使用所述第二材料，即同时使用软钎料通过焊接的方式连接；或者所述芯片与所述第一热沉与所述第二热沉的连接采用所述第一材料和所述第二材料混用的方式，具体的使用方案，可以根据具体的应用场景，做出针对性的设计。可以理解的，所述芯片与所述第一热沉与所述第二热沉的连接方式灵活，试用性强。
结合第一方面，在第四种可能的实施方式中，所述的功率模组中的第一热沉与第二热沉具有高导热、高导电的性能。所述高导热特性可以将所述芯片在工作时产生的热量传导至所述热沉中，所述高导电特性可以满足所述芯片在工作时内部电流流动的需求，为内部电流流动提供通道。所述第一热沉与所述第二热沉的材料包括但不限于Cu、CuMo复合材料、金刚石、金刚石-铜复合材料、Al-SiC复合材料等具有高导热的材料。可以理解的，所述第一热沉与所述第二热沉采用高导热高导电的材料，可以提高所述芯片的散热性能的同时为所述芯片提供电流通道，提高所述功率模组的散热性能，进而提高所述功率模组的功率密度。
结合第一方面，在第五种可能的实施方式中，所述第一基板与所述第二基板相对设置， 所述第一基板置于所述第一热沉远离所述芯片的一面，所述第二基板置于所述第二热沉远离所述芯片的一面。所述第一基板与所述第一热沉以及第二基板与第二热沉采用第二材料连接，即通过软钎料焊接连接；同样的，为了提高所述功率模块的散热性能，可以使用所述第一基板与所述第一热沉以及第二基板与第二热沉采用第一材料连接，即采用高导热材料通过烧结连接。
结合第一方面，在第六种可能的实施方式中，所述功率模组包括第一基板与第二基板，所述第一基板与所述第二基板包括：第一导电层、第二导电层以及位于相对放置的所述第一导电层与所述第二导电层之间的第一绝缘层。所述第一基板与所述第一热沉远离所述芯片的一面连接，所述第一基板与所述第一热沉接触的面为所述第一基板的第一导电层；所述第二基板与所述第二热沉远离所述芯片的一面连接，所述第二基板与所述第二热沉接触的面为所述第二基板的第一导电层。所述第一基板与所述第二基板的第一导电层的材料为Cu、Al等，所述第一导电层用于为所述芯片内部电流的流动提供通道；所述第一基板与所述第二基板的第一绝缘层的材料为陶瓷等绝缘材料，所述第一绝缘层用于避免所述第一基板以及所述第二基板中的第一导电层与散热器导通；所述第一基板与所述第二基板中的第二导电层的材料为Cu、Al等，所述第二导电层用于保护所述第一基板与所述第二基板中的第一绝缘层，防止所述第一绝缘层碎裂，同时所述第二导电层具有导热的作用，将来自第一绝缘层的热量传导到与所述第二导电层接触的散热器中。
一般的，所述第一基板与所述第二基板可以为覆铜陶瓷基板(Direct Bond Copper，DBC)、活性金属焊接基板(Active metal brazed copper，AMB，例如Al2O3-AMB、Si3N4-AMB或AlN-AMB)或绝缘金属基板(Insulated metal substrate，IMS)等，在此不作限定。示例性的，为了进一步提高功率密度，所述第一基板和所述第二基板可以采用高导热性的AlN-DBC、Si3N4-AMB或AlN-AMB形成，在此不作限定。
结合第一方面，在第七种可能的实施方式中，所述芯片与所述第二热沉的连接面为所述芯片的第二连接面，所述芯片的所述第二连接面具有焊盘，所述焊盘嵌入到所述芯片中，所述焊盘未嵌入芯片的一面与芯片的第二连接面齐平，所述焊盘通过第一材料或第二材料与所述第二热沉连接。可以理解的，所述焊盘未嵌入芯片的一面与芯片的第二连接面齐平可以使时所述芯片与所述第二热沉充分接触，提高散热效率，同时减少所述芯片与所述第二热沉之间的应力，使接触面的应力均匀，有利于保护所述功率模组不受损坏。
结合第一方面，在第八种可能的实施方式中，所述芯片包括绝缘栅双极型晶体管芯片、绝缘栅双极型晶体管芯片与二极管芯片合封芯片、硅金属氧化物半导体场效应晶体管、碳化硅金属氧化物半导体场效应晶体管、氮化镓金属氧化物半导体场效应晶体管等功率半导体芯片。
结合第一方面，在第九种可能的实施方式中，所述芯片包括至少两个独立的芯片，所述至少两个独立的芯片均置于所述第一热沉与第二热沉之间，即在所述至少两个独立的芯片共用同一片第一热沉与同一片第二热沉。同样的，所述至少两个独立的芯片分别置于各自对应的第一热沉与第二热沉之间，所述至少两个独立的芯片各自对应的第一热沉各自独立，彼此直接没有连接；所述至少两个独立的芯片各自对应的第二热沉各自独立，彼此之间没有连接。当所述芯片包括至少两个独立的芯片时，此发明实施例不对所述独立芯片与所述第一热沉和所述第二热沉的连接方式做限制。
结合第一方面，在第十种可能的实施方式中，所述功率模组还包括：端子，所述端子的一端与所述芯片电连接，所述端子的另一端位于所述功率模组外，所述端子用于所述功率 模组中的芯片与外界电路的连接。所述功率模组还包括：绑定线，所述绑定线的一端与所述芯片电连接，所述绑定线的另一端与所述信号端子电连接，从而使所述芯片与所述信号端子导通。可以理解的，所述信号端子用于所述芯片与外界信号进行通信。
结合第一方面，在第十一种可能的实施方式中，所述功率模组还包括塑封体，所述第一基板与所述第二基板、所述第一热沉与所述第二热沉以及所述芯片置于所述塑封体内，通过所述塑封体，将所述第一基板、所述第二基板、所述第一热沉、所述第二热沉以及所述芯片固定密封，使之构成功率半导体封装。且所述塑封体与所述第一基板以及所述第二基板中的至少一个相对的至少部分区域为裸露区域，这样消除了塑封层的阻挡，使所述第一基板与所述第二基板与散热器之间接触更紧密，有利于热量的传递。可以理解的，所述塑封体使所述功率模组密封，阻止外界的水气进入所述功率模组，进而防止所述功率模组出现短路现象，同时，所述塑封体将所述功率模组中的各个部分进行的固定，提高了功率模组各个部分之间的稳定性。
结合第一方面，在第十二种可能的实施方式中，所述功率模组还包括第一散热器与第二散热器，所述第一散热器和所述第二散热器相对设置，所述第一基板与所述第二基板、所述第一热沉与所述第二热沉以及所述芯片设置于所述第一散热器与所述第二散热器之间；所述第一散热器与第一基板通过第三材料连接，所述第二散热器与所述第二基板通过第三材料连接，所述第三材料为导热界面材料，包括但不限于热硅脂、石墨膜、硅凝胶、相变材料等。采用相对设置的第一散热器与第二散热器，使所述功率模组具有双面冷却结构，热量可以由所述功率模组的两个表面双向传递到所述第一散热器与所述第二散热器，相比单面冷却结构，在同等工艺条件下双面冷却结构的散热能力更强，有助于充分发挥功率半导体芯片性能，提升产品功率密度，降低产品成本。
一般的，所述第一散热器、所述第二散热器为液冷散热器，在所述第一散热器与所述第二散热器的内部均设有散热水道，所述散热水道具有进水口、出水口。冷却液由所述进水口进入位于所述散热器内部的散热水道，吸收所述散热器的热量，并最终由所述出水口流出将所有热量带走。
第二方面，本申请实施例提供了一种功率模组的制造方法，所述方法包括：
第一步：通过烧结或焊接的方式将芯片与第一热沉连接，通过烧结或焊接的方式将芯片与第二热沉连接，形成快速冷却单元；
第二步：通过焊接或烧结的方式将第一基板与第一热沉连接，在第一基板上进行端子焊接，通过绑定线将所述芯片与所述端子连接；
第三步：通过焊接或烧结的方式将第二基板与第二热沉连接，通过塑封或包封对上述结构进行封装，形成功率模组；
结合第二方面，在第一种可能的实施方式中，通过导热界面材料将所述第一基板与第一散热器连接，通过导热界面材料将第二基板与所述第二散热器连接。
结合第二方面，在第二种可能的实施方式中，通过烧结方式进行连接时，所采用的连接材料为第一材料；通过焊接方式进行连接时，所采用的材料为第二。
第三方面，本申请实施例提供了一种电机驱动器，所述电机驱动器包括电容和至少一个如第一方面的申请实施例中所述的功率模组，所述功率模组端子与所述电容电连接，所述电容用于为所述功率模组提供电压，所述功率模组用于将电池包的直流电转换为电机的交流电。可以理解的，所述电机驱动器包含了如第一方面的申请实施例中的功率模组，由于所述功率模组具有良好的散热性以及更好的功率密度，从而可以提高所述电机驱动器的功率转换效率。
第四方面，本申请实施例提供了一种动力总成，所述动力总成包括电机和与所述电机连接的如第三方面的申请实施例中所述的电机驱动器，所述电机驱动器用于为所述电机提供交流电，所述电机用于将来自所述电机驱动器的交流电转换为动能。可以理解的，所述动力总成中包含了所述第三方面的申请实施例的电机驱动器，由于所述电机驱动器具有更高的功率转换效率，可以为所述电机提供更高的电能，从而所述电机可以输出更高的动能，因此所述动力总成具有更高的驱动力。
第五方面，本申请实施例提供了一种车辆，所述车辆包括车轮和与所述车轮连接的如第四方面的申请实施例中所述的动力总成，所述动力总成用于为所述车轮提供动力，带动所述车轮前进或后退。可以理解的，所述车辆中包含了第四方面的申请实施例中的动力总成，由于所述动力总成可以提供更高的驱动力，因此所述车辆具有更高的动力，为驾驶者提供更好的驾驶体验。
本申请实施例提供的功率模组及其制造方法、电机驱动器、动力总成以及车辆。由于将所述芯片置于相对设置的所述第一热沉与所述第二热沉之间，并通过具有高导热性能的第一材料将所述芯片与第一热沉连接起来，以及通过第二材料将所述芯片与第二热沉连接起来，使得所述芯片在工作时所产生的热量，可以迅速的通过所述第一材料与所述第二材料传导只所述第一热沉与所述第二热沉，从而降低所述芯片的瞬态温度。同时，又由于所述第一热沉与所述第二热沉具有良好的均温效应，可以很好的将来自芯片的热量快速均温并传导至与其连接的基板，并通过所述基板将热量传递到散热器中，最终通过散热器将热量带走，因此降低了所述芯在工作时的稳态温度，使得芯片在同等面积下，可以承受更大的电流，有效扩大了芯片的功率密度。最后，由于所述第一热沉与所述第二热沉相对对称设置，能够最大限度的平衡热应力错配，减小芯片收到的结构应力，作为缓冲保护在芯片的两侧，延长器件的工作寿命，进一步提高芯片的可靠性。
附图说明
图1是本发明实施例一提供的一种功率模组结构示意图；
图2是本发明实施例二提供的另一种功率模组结构示意图；
图3是本发明实施例三提供的另一种功率模组结构示意图；
图4是本发明实施例四提供的一种功率模组的制造方法；
图5是本发明实施例四提供的一种功率模组的制造的有压烧结流程。
具体实施方式
下面将结合本申请实施例中的附图，对本申请实施例中的技术方案进行描述。
在新能源场景中功率模块扮演者重要的角色，无论是在新能源汽车、智能光伏等领域都是功率变换电路的核心组件。在功率变换电路中功率模块在工作状态下处于频繁的开通与关断状态之间的切换，通过在两个状态之间的切换，实现交直流电压的转换，为负载提供合适的电压。但是频繁的状态切换，会带来功率模组的热量损耗，包括开通损耗与关断损耗，两者都会为功率模组带来大量的热量，而高温将导致功率模组中的功率芯片转换效率降低甚至损坏，最为功率转换电路的核心组件，功率模组转换效率的降低甚至损坏将会给整个系统带来严重影响，例如新能源汽车无法发动、智能光伏系统宕机等。因此将功率芯片在工作状态下产生的热量及时的导出功率模组，降低功率芯片在工作状态的温度，从而使功率芯片长期 稳定的工作，一直是业界研究的重点。
当前业界为了提高散热面积，充分的利用芯片的两面，提出的双面散热的结构，即通过在功率芯片两侧同时设置散热器，将功率芯片的热量分别通过两个散热器导出。为了提高对芯片的应力保护以及为芯片内部电流提供通路，目前的主流的双面散热结构，在安装散热片之前，首先在芯片的两侧贴合三层结构基板，如覆铜陶瓷基板(Direct Bond Copper，DBC)、活性金属焊接基板(Active metal brazed copper，AMB，例如Al2O3-AMB、Si3N4-AMB或AlN-AMB)或绝缘金属基板(Insulated metal substrate，IMS)等，三层基板的上下两层为导电导热材料，靠近功率芯片的下层既可以为功率芯片内部电流的流动提供通道，也可以为将功率芯片产生的热量及时的导出，而靠近散热器上层主要可以为所述功率芯片提供保护，提高功率芯片的免收外界撞击的影响，而中间层为绝缘层，可以防止下层的导电导热材料与散热器导通，防止芯片出现短路等问题。
但是由于基板的下层，如DBC一般采用铜层与功率芯片连接，下层的铜层比较薄对提升瞬态热性能有限，且下层直接和基板的中层贴近连接，但是一般基板中层采用的绝缘材料，如陶瓷等散热性能较差，导致其有效热扩散面积小，稳态热性能不是最优。当前一些结构中，为了进步提高散热性能，及时的将所述功率芯片中的热量导出，利用导热导电柱与所述功率芯片连接进一步提高了功率模组的散热性能，但是由于在功率模组中增加了导热导电柱，功率芯片一面连接DBC的下层,功率芯片的另外一面连接导电导热柱，两种材料的热膨胀系数(CTE：Coefficient thermal expension)差距较大，导致功率芯片在工作中会因为不对称的热匹配，而受到不平衡的应力，而限制了功率芯片可靠性性能的提升。
针对以上问题，本申请提供了一种新型的功率模组结构以及制作方法、电机驱动器、动力总成和车辆。本申请通过在芯片的两侧贴合高导热高导电的热沉，将所述芯片置于相对设置的第一热沉与第二热沉之间，并利用具有高导热性能的第一材料通过烧结的方式将芯片与第一热沉连接，利用第二材料如普通的软钎焊料通过焊接的方式将芯片与第二热沉连接，从而构造出新的快速冷却单元，然后将快速冷却单元置于相对设置的第一基板与第二基板之间，快速冷却单元与所述第一基板以及所述第二基板通过焊接或烧结的方式连接，最终形成新的功率模组结构。所述高导热材料可以将芯片工作中产生的热量快速的传导到热沉当中，而所述第一热沉与所述第二热沉同样具有高导热性能，可以迅速的将来自芯片的热量传导出去，从而降低芯片的瞬态温度；同时第一热沉与第二热沉具有很好的均温特性，可以将热量均匀的扩散的整块的第一热沉与第二热沉的表面，从而扩大散热面积，降低局部温度，提高散热效率，更进一步的所述第一热沉与所述第二热沉还分别与第一基板与第二基板连接，而第一基板与第二基板的散热面积大于等于所述第一热沉与所述第二热沉的面积，所述第一基板与第二基板将来自所述第一热沉与第二热沉的热量进一步扩散到更大的散热面积上，最终将热量传导至分别与第一基板与第二基板相连的散热器中，所述散热器将热量带离所述功率模组，进而降低所述功率模组的温度，降低所述芯片工作稳态下的温度。因此，本申请的中的功率模组可以有效的降低芯片在瞬态与稳态下的温度，使得芯片的同等面积下，可以承受各大的电流，提高了芯片的功率密度，进而使采用该功率模组的电机驱动器、动力总成以及车辆具有更高的性能。同时，本申请中的功率模组由于采用在芯片的上下两面均采用了热沉连接，使的芯片具有对称的结构，能够最大限度的平衡热应力错配，减小芯片受到的结构应力，第一热沉与第二热沉作为缓冲结构保护在芯片的两侧，延长器件的工作寿命，进一步提高芯片的可靠性。
本申请提供的第一种实施例如图1所述，本申请的第一种实施例提供一种功率模组， 所述功率模组包括芯片1、第一热沉2、第二热沉3、第一基板4、第二基板5。所述芯片1置于相对放置的所述第一热沉2与所述第二热沉3之间，所述芯片1与所述第一热沉2利用第一材料12通过烧结的方式连接。所述第一材料12具有高导热特性，可以快速的将芯片1工作中产生的热量导出所述芯片1至所述第一热沉2，从而降低所述芯片1的瞬态温度，同时所述第一热沉2也具有高导热特性，可以将来自芯片1的热量快速的导出至第一基板4中，最终有第一基板4导出所述功率模组。所述芯片1与所述第二热沉3利用第二材料31通过焊接的方式连接，所述第二热沉3具有高导热特性，可以将来自所述芯片1的热量快速的导出到与其连接的第二基板5中，最终所述第二基板5将热量导出功率模组。同时所述第一热沉2与所述第二热沉3具有很好的均温特性，可以将来自芯片1的热量很好的扩散到整块热沉当中，提高散热面积，提高散热效率。所述第一热沉2与所述第一基板4利用第二材料24通过焊接的方式连接，所述第二热沉3与所述第二基板5利用第二材料53通过焊接的方式连接。所述第一基板4与所述第二基板5具有比所述第一热沉2与所述第二热沉3更大的面积，进一步提高散热面积，从而提高散热面积。同时由于利用所述第一热沉2与所述第二热沉3采用上下对称的方式将所述芯片1包过，从而最大限度的平衡热应力错配，减小芯片受到的结构应力，保护芯片1免受外界损坏，从而延迟器件工作寿命，进一步提高芯片可靠性。
在本实施例一中的所述第一材料12具有高导热特性，示例性的，所述高导热材料可以由银膏、铜膏或银膜形成。在具体实施时，银膏可以包括微米银膏(Micrometer silver particle paste)和纳米银膏(Nanometer silver particle paste)中至少一种。其中，微米银膏是指使用微米银粒子和有机溶剂制作的银膏，成本低，安全。一般的加工手段有加压烧结、高温烧结和扩散焊的方式，烧结材料致密性高，被接合体界面接合牢固，接合可靠性高。纳米银膏是纳米银粒子和有机溶剂制作的银膏，成本高，有纳米粒子的作业安全风险。一般的所述第一材料12的厚度5～50um，所述第一材料12具有导电性，可以为所述芯片1内部的电流流动提供通道。
为了进一步提高烧结接合的可靠性，可以通过在烧结材料中增加材料来调节烧结材料的弹性模量，热膨胀系数(CTE)等。示例性的，该烧结材料包括主体材料和填充在主体材料中的填料(Filler)；其中主体材料包括银膏、铜膏或银膜中的至少一种，该填料由与主体材料接合性好的材料形成，且该填料的热膨胀系数小于主体材料的热膨胀系数，从而提高烧结的接合可靠性。
在本实施例一中的所述第二材料24为普通的焊接材料，既可以采用高温焊料，如：高铅焊料、Au基焊料；又可以使用中温焊料，如SAC305，Sn-Sb类(SnSb5,SnSb10)。在具体实施时，焊料的厚度对焊料接合可靠性等有重要影响，为了保证焊料厚度的可控以及厚度的均一性。本实施例中采用焊接方式时使用的焊接材料可以相同，例如，所述芯片1与所述第二热沉3之间的连接、所述第一热沉2与所述第一基板4之间的连接以及所述第二热沉3与所述第二基板5之间的连接可以采用相同的焊料连接，这样在所述功率模块的制造过程中，所述芯片1与所述第二热沉3之间的连接、所述第一热沉2与所述第一基板4之间的连接以及所述第二热沉3与所述第二基板5之间的焊接就可以通过一次回流焊接完成，从而可以简化工艺步骤，节约成本。
当然，在具体实施时，所述芯片1与所述第二热沉3之间的连接、所述第一热沉2与所述第一基板4之间的连接以及所述第二热沉3与所述第二基板5之间的连接也可以采用不同的焊料，在此不作限定。示例性的，所述芯片1与所述第二热沉3之间的连接 可以采用高温焊料，例如High Pb焊料、Au基焊料(如AuSn)等，所述第一热沉2与所述第一基板4之间的连接以及所述第二热沉3与所述第二基板5之间的连接可以采用中温焊料，例如SAC305，Sn-Sb焊料等。
在本实施例一中的，所述芯片1与所述第一热沉2的连接也可以通过所述第二材料24，即所述芯片1可以利用普通的焊接材料通过焊接的方式与所述第一热沉2连接，同理，所述芯片1与所述第二热沉3的连接也可以通过所述第一材料12，即所述芯片1可以利用高导热材料通过烧结的方式与所述第二热沉3连接。进一步的，所述芯片1与所述第一热沉2以及所述第二热沉3的连接可以同时使用所述第一材料12，即同时使用高导热材料通过烧结的方式连接，或者同时使用所述第二材料24，即同时使用如前述所述的普通焊接材料料通过焊接的方式连接；或者所述芯片1与所述第一热沉2与所述第二热沉3的连接采用所述第一材料12和所述第二材料24混用的方式，具体的使用方案，可以根据具体的应用场景，做出针对性的设计。需要指出的是，所述第一材料12与所述第二材料24具有导电性，可以为所述芯片1在所述功率模组内部电流的流动提供通道。可以理解的，所述芯片1与所述第一热沉2与所述第二热沉3的连接方式灵活，试用性强。
在本实施例一中的所述第一热沉2与所述第二热沉3具有高导热性能，所述第一热沉2与所述第三热沉3可以将迅速的将所述芯片1中的热量快速导出，降低芯片的热量。所述第一热沉2与所述第二热沉3的材料包括但不限于Cu、CuMo复合材料、金刚石、金刚石-铜复合材料、Al-SiC复合材料等具有高导热的材料。同时所述第一热沉2与所述第二热3沉还具有导电特性，所述芯片1在工作中会有电流在内部流动，所述第一热沉2与所述第二热沉3可以为所述芯片1的内部电流提供电流通道。因此，所述第一热沉2与所述第二热沉3具有高导热与高导电的双特性，既可以将来自芯片1的热量及时的导出芯片1，降低所述芯片1的热量，有可以为所述芯片1内部电流的流动提供通道。同时又因为，所述第一热沉2与所述第二热沉3相对对称的设置，可以最大限度的平衡热应力错配，减小芯片受到的结构应力，保护芯片1免受外界损坏，从而延迟器件工作寿命，进一步提高芯片可靠性。
在本实施例一中的所述芯片1置于所述第一热沉2与所述第二热沉3中，所述芯片在工作时，会在导通状态与关断状态之间快速的切换，从而将输入的交流电压转换为直流电压或者将输入的直流电压转换为交流电压，由于所述芯片1在导通状态具有导通损耗，在关断状态具有关断损耗，所述导通损耗与关断损耗都会产生大量的热量，因此需要所述第一热沉2与所述第二热沉3将所述芯片1中的热量快速导出。所述芯片1可以为绝缘栅双极型晶体管(IGBT：Insulated Gate Bipolar Transistor)芯片、绝缘栅双极型晶体管(IGBT：Insulated Gate Bipolar Transistor)与二极管(diode)合封的芯片或硅(Si)金属氧化物半导体场效应晶体管(Metal-Oxide-Semiconductor Field-Effect Transistor,MOSFET)芯片、碳化硅(SiC)金属氧化物半导体场效应晶体管(MOSFET)芯片或者氮化镓(GaN)金属氧化物半导体场效应晶体管(MOSFET)芯片等功率半导体芯片。
在具体实施时，所述芯片1具有第一连接面与第二连接面，所述芯片1与所述第二热沉3的连接面为所述芯片1的所述第二连接面，为了降低芯片所受应力的影响，所述芯片1的所述第二连接面具有焊盘11，所述焊盘11嵌入到所述芯片1中，所述焊盘11未嵌入所述芯片1的一面与所述芯片1的第二连接面齐平。所述焊盘11通过第一材料或第二材料与所述第二热沉3连接。所述焊盘未嵌入所述芯片1的一面与所述芯片1的第二连接面齐平可以使时所述芯片1与所述第二热沉3充分接触，扩大散热面积，提高散热效率，同时减少所述芯片 与所述第二热沉3之间的应力，使接触面的应力均匀，有利于保护所述功率模组不受损坏，提高所述功率模组的可靠性。
在具体实施时，所述芯片1具有第一连接面与第二连接面，所述芯片1与所述第二热沉3的连接面也为所述芯片1的所述第一连接面，即采用芯片倒装的散热结构。
在本实施例一中的所述芯片1与所述第一热沉2以及所述第二热沉3形成快速冷却单元，然后在所述快速冷却单元置于相对设置的第一基板4与第二基板5中间。所述第一基板4与所述第二基板5具有三层结构：上层、中间层以及下层，其中上层与下层为具有导电导热的特性的材料，中层为具有绝缘特性的材料。具体的，所述第一基板4包括第一导电层41、第一绝缘层42以及第二导电层43；所述第二基板5包括第一导电层51、第一绝缘层52以及第二导电层53。一般的，为了所述芯片1两面的散热效率相当，增加热平衡，减少热应力错配，所述第一基板4与所述第二基板5选择同样的结构与材料组成，当然在一些特定场景中，可以根据实际情况灵活的选择适合的材料，本申请中不做具体的限制。本申请中，以所述第一基板4与所述第二基板5选择同样的结构与材料组成为例，详细介绍其内部结构及时各个部分的作用。又由于所述第一基板4与所述第二基板5的结构与作用相同，这里以所述第一基板4作为例子进行介绍。
由图1所示可以得到，所述第一基板4的所述第一绝缘层42置于相对设置的所述第一导电层41与所述第二导电层43之间。所述第一导电层同过第一材料或第二材料与所述第一热沉2连接，所述第一基板4中的所述第一导电层41具有到导电性，可以为所述芯片1内部电流的流动提供通道；同时所述第一导电层还具有导热性，可以将来自所述芯片1的热量及时的导出，因此所述第一导电层41的材料可以为Cu、Al等材料，具体使用哪种材料可以根据实际情况选择，此处不做限定。所述第一基板4中的第一绝缘层42具有绝缘性，由于所述第一基板4中的第一导电层41中流有所述芯片1中的电流，而所述第二导电层43与散热器7相连，所述散热器7一般利用冷却液体将功率模组中热量导出到外界，因此散热器7处于在一个潮湿的环境中，如果第一导电层41中的电流通过所述第二导电层43最终流到所述散热器7中，将会引起所述芯片1的短路等问题，因此需要所述第一绝缘层42将所述第一导电层41与所述第二导电层43做绝缘隔离，避免所述芯片1中的电流进入所述散热器7中。所述第一基板4中的第二导电层43通过第三材料47与所述散热器7连接，所述第三材料47可以为导热界面材料。所述第二导电层43用于保护所述第一基板4中的第一绝缘层42，防止所述第一绝缘层42碎裂，同时所述第二导电层43具有导热的作用，将来自所述第一绝缘层42的热量传导到与所述第二导电层43接触的散热器7中，所述热量最终被所述散热器7中冷却液带走。所述第二导电层43的材料可以为Cu、Al等材料。
一般的，所述第一基板4与所述第二基板5可以为覆铜陶瓷基板(Direct Bond Copper，DBC)、活性金属焊接基板(Active metal brazed copper，AMB，例如Al2O3-AMB、Si3N4-AMB或AlN-AMB)或绝缘金属基板(Insulated metal substrate，IMS)等，在此不作限定。示例性的，为了进一步提高功率密度，所述第一基板和所述第二基板可以采用高导热性的AlN-DBC、Si3N4-AMB或AlN-AMB形成，在此不作限定。
在本实施例一中的功率模组还包括第一端子8与第二端子10，所述第一端子8的一端与所述第一基板4利用所述第二材料84通过焊接的方式连接，所述第一端子8的另一端出与所述功率模组的外部用于与外部电路的连接；所述第二端子10的一端与所述第二基板5利用所述第二材料105通过焊接的方式连接，所述第二端子10的另一端出与所述 功率模组的外部用于与外部电路的连接。此处不对所述第一端子8与所述第二端子10的材料与工艺做限制，所述第一端子8与所述第一基板4的连接以及所述第二端子10与所述第二基板5的连接所采用的材料以及工艺不做具体的限制，既可以采用第一材料使用烧结的方式连接也可以采用第二材料使用焊接的方式连接，或者两种方式混用，视具体场景灵活适配。
在本实施例一中的所述功率模组还包括绑定线13，所述绑定线13用于将所述芯片1与所述第二端子10连接起来，所述绑定线13为导线，使的所述芯片1可以通过所述第二端子10与外界信号进行交互。所述绑定线13的一端与所述芯片1通过键合方式电连接，所述绑定线13的另一端与所述第一基板4键合方式电连接，具体的是与第一基板4上的焊盘通过键合方式电连接，而第二端子10也与所述焊盘导通，从所述第二端子10与所述芯片1可以导通。本实施例一中的键合方式为现有的一种将金属线与焊盘之间连接的方式，具体为将金属线利用热、压力或超声波能量使得金属线与焊盘紧密焊合。当然在一些其他示例中，绑定线13的两端与焊盘和芯片1之间也可以采用其他方式电连接，例如通过导电胶水或者熔接方式进行连接。
在本实施例一中功率模组在完成内部互联后还需要塑封体9进行塑封，所述塑封体9将所述第一热沉2与第二热沉3、芯片1、第一基板4与第二基板5、绑定线13已经位于功率模组内部的端子11全部包裹起来，形成功率半导体封装，从而为整个所述功率模组提供一个封闭的环境，防止外界的水气或液体等进入功率模组内部，导致所示芯片1出现短路现象。同时，所述塑封体将所述功率模组中的各个部分进行的固定，提高了功率模组各个部分之间的稳定性。
塑封体9所采用的塑封料使用低模量的塑封料，可以提高功率模组的可靠性，塑封料可以采用弹性模量在0.5GPa～20GPa之间的材料形成，例如环氧塑封料等，在此不作限定。在具体实施时，塑封完成后可以对所述功率模块的上下表面进行研磨，使所述功率模块的两面平行。当然，也可以根据需求不用研磨。示例性的，塑封后还可以对裸露在所述功率模组外部的端子11进行镀锡处理，以防止端子氧化和增加端子的可焊性。同时，且塑封体11与所述第一基板4以及所述第二基板5中的至少一个相对的至少部分区域为裸露区域，这样消除了塑封层的阻挡，使所述第一基板4与所述第二基板5与散热器之间接触更紧密，有利于热量的传递。
在本实施例一中功率模组还包括第一散热器6与第二散热器7，所述第一散热器6与所述第二散热器7可以将所述芯片1所产生的热量最终导出。在完成对功率模组的塑封，形成功率半导体封装后，需要将所述第一散热器6以及所述第二散热器7与所述功率模组连接。所述第一散热器6与第散热器相对设置，所述第一散热器6与所述第一基板4通过所述第三材料46连接，所述第二散热器7与所述第二基板5通过所述第三材料75连接，所述第三材料46包括但不限于热硅脂、石墨膜、硅凝胶、相变材料等导热界面材料。所述第三材料46与所述第三材料75所选择的材料可以相同，也可以不同，在此不做限制。一般的，所述第一散热器6与所述第二散热器7具有散热翅片，所述散热翅片可以增大散热面积，提高所述散热器的散热效率。本实施例一中采用了相对设置的第一散热器6与第二散热器7，使得所述功率模组具有双面冷却结构，热量可以有所述功率模组的两个表面导出，相比于只使用一个散热器的单面冷却结构，可以提高功率模组的散热效率，进一步提高功率模组的散热效率。同时双面对称的结构，也可以最大限度的较小热应力不均衡，降低功率模组损坏的风险，提高所述功率模组的可靠性。
一般的，所述第一散热器6与所述第二散热器7为液冷散热器，在所述第一散热器6与所述第二散热器7的内部均设有散热水道，所述散热水道具有进水口、出水口。冷却液由所述进水口进入位于所述散热器内部的散热水道，吸收所述散热器的热量，并最终由所述出水口流出将所有热量带走。所述冷却液也可以为油冷，比传统冷却剂(水)具备更多优点。油冷的具有灵敏的热平衡能力，超强的热传导能力，保障所述芯片1处于最佳工作温度；超宽的工作温度区间，低温环境不用添加防冻剂，避免了气蚀、水垢、电解等腐蚀伤害，同时与橡胶管有良好的相容性。此处不对具体的冷却液的类型做出限制，可以更加具体的场景以及实际的情况选择合适的冷却液。需要指出的是，在一些场景中为了促进所述第一散热器6与所述第二散热器7之间的通过连接件连接，所述第一散热器6中的冷却液可以通过连接件进入到第二散热器7中，提高冷却液的利用率。
本申请的第二种实施方式提供了另一种功率模组如图2所示，所述功率模组包括两个独立的芯片，分别为第一芯片1与第二芯片14，所述第一芯片1置于相对设置的第一热沉2与第二热沉3之间，所述第二芯片14置于相对设置的第三热沉15与第四热沉16之间。所述第一热沉2与第二热沉3以及所述第三热沉15与所述第四热沉16所采用的材料与本申请的第一实施例中的范围相同，所述第一芯片1与所述第一热沉2以及所述第二热沉3之间的连接与本申请的第一实施例相同，所述第二芯片14与所述第三热沉15以及所述第四热沉16之间的连接与本申请的第一实施例的范围相同。对两个独立的芯片1与芯片14设置独立的冷却结构，可以根据两个芯片不同的特点设置合适的热沉材料以及连接方式。方式灵活多变，适应性强。在第二种实施方式中其他部分，如第一基板4、第二基板5、塑封体9、第一端子8、第二端子10、绑定线13、第一散热器6、第二散热器7以连接部分与本申请实施例一中一致，故不在此赘述。一般的，本申请实施例中的功率模组还可以包含多个芯片，芯片的个数大于两个，本申请实施例对功率模组的芯片数量不做限制。
本申请的第三种实施方式提供了另一种功率模组如图3所示，所述功率模组包括两个独立的芯片，分别为第一芯片1与第二芯片14，所述第一芯片1以及所述芯片14共同置于相对设置的同一块第一热沉2与同一块第二热沉3之间。所述第一热沉2与第二热沉3以及所所采用的材料与本申请的第一实施例中的范围相同，所述第一芯片1和所述第二芯片14与所述第一热沉2和所述第二热沉3之间的连接与本申请的第一实施例的范围相同。对两个独立的芯片1与芯片14设置相同的冷却结构，可以减少工艺的复杂性，提高效率，节省制造成本。需要指出的是，在第三种实施方式中其他部分，如第一基板4、第二基板5、塑封体9、第一端子8、第二端子10、绑定线13、第一散热器6、第二散热器7以连接部分与本申请实施例一中一致，故不在此赘述。一般的，本申请实施例中的功率模组还可以包含多个芯片，芯片的个数大于两个，本申请实施例对功率模组的芯片数量不做限制。
本申请的第四种实施方式提供了一种功率模组的制造方法，所述方法如图4所示包括：
S1：通过烧结或焊接的方式将芯片与第一热沉连接，通过烧结或焊接的方式将芯片与第二热沉连接，形成快速冷却单元；
S2：通过焊接或烧结的方式将第一基板与第一热沉连接，在第一基板上进行端子焊接，通过绑定线将所述芯片与所述端子焊接连接；
S3：通过焊接或烧结的方式将第二基板与第二热沉连接，通过塑封或包封对上述结构进行封装，形成功率模组；
在本实施例四中功率模组的制造方法还包括，通过导热界面材料将所述第一基板与第一散热器连接，通过导热界面材料将第二基板与所述第二散热器连接。
在本实施例四中功率模组的制造方法中，通过烧结方式连接时，所采用的连接材料为第一材料；通过焊接方式连接时，所采用的连接材料为第二材料。
在本实施例四中通过烧结方式连接时，可以为有压烧结，有压烧结的步骤，以所述芯片与所述第一热沉的连接为例，如图5所示进行说明如下：
S11：将第一材料印刷在第一热沉上。可以采用钢网印刷工艺或丝网印刷工艺将烧结材料印刷在第一热沉上。钢网印刷工艺相比丝网印刷工艺成本低、制作简单。所述第一材料的厚度可以控制在30μm～160μm之间，具体可以根据实际产品进行设计，在此不作限定；
S12：对印刷后的第一材料进行预干燥处理。对印刷后的第一材料进行预干燥处理是为了防止加压烧结时压塌烧结材料。一般的，可以在N2氛围下，采用100℃～180℃的温度对印刷在第一热沉上的第一材料13行预干燥处理5min～40min；
S13：将所述芯片贴装在第一热沉的第一材料上进行加压。可以先通过真空吸附，将所述芯片吸起，然后通过画像识别系统，对第一热沉进行对位，之后将芯片固定在干燥后的第一材料上进行加压。一般的，温度控制在100℃～180℃，压力控制在0.1MPa～10MPa，时间控制在10ms～999ms；
S14：对贴装在第一热沉上的芯片进行有压烧结。有压烧结(Press sintering)是指在高温下向被接合体施加压力，从而增加被烧结体的密度，促进烧结材料粒子间以及烧结材料和被接合体界面的原子扩散，增强结合强度和接合可靠性。本申请对采用的有压烧结的工艺不作限定，可以为任何公知的方法。一般的，进行有压烧结的烧结条件为：烧结温度控制在200℃～300℃，施加的压力控制在5MPa～30MPa，烧结时间控制在1min～10min；
S15：对烧结完成的第一热沉与芯片在加压状态下进行冷却。如果有压烧结过程是在保护性气氛或真空环境中进行的，冷却过程也在保护性气氛或真空环境中进行。一般的，冷却条件可以为：施加的压力控制在5MPa～20MPa，冷却时间控制在1min～10min；
S16：对贴装有芯片的第一热沉进行清洁处理，以去除残留的有机物。例如采用等离子体处理(Plasma treatment)工艺或有机溶剂清洗工艺去除第一热沉等处残留的有机物，增加后续塑封料的界面接合性，防止塑封料分层，进一步提高功率模块的可靠性。
通过本实施例四的制造方法所制作的功率模组，具有和以上所有实施例中的功率模组相同的优点，故不再赘述。本实施例四中所采用的各个部分的包括芯片、第一热沉、第二热沉、第一基板、第二基板、第一材料、第二材料、第三材料、第一散热器、第二散热器、塑封体以及端子等所采用的材料与上述所有实施例中的功率模组相同故不再赘述。
本申请的第五种实施方式提供了一种电机驱动器，所述电机驱动器包括电容和至少一个如以上任一申请实施例中所述的功率模组，所述功率模组端子与所述电容电连接，所述电容用于为所述功率模组提供电压，所述电机驱动器用于将电池包的直流电转换为电机的交流电。本申请实施例中，功率半导体模组的结构和工作原理可以参考上述实施例的描述，本申请实施例中不再赘述。
一般的，本申请实施例提供的电机驱动器，由于所述电机驱动器包含了以上任一申请实施例中的功率模组，由于所述功率模组采用了双面对称的新型冷却结构，使得所述功率模组的散热性能大大提高，因此相同面积的功率芯片，采用本申请实施例的功率模组的功率芯片可以承受更高的电流，从而获得更高的功率密度，而采用此功率模组的电机驱动器，也因此可以输出更高的功率，具有更高的功率转化效率。同时，由于本申请实施例中的功率模组，能够最大限度的平衡热应力错配，减小芯片受到的结构应力，从而功率模组中的芯片可靠性高，芯片工作寿命长，所以采用以上任一申请实施例中的功率模组的电机驱动器，可靠性高， 可长时间稳定工作。
本申请的第六种实施方式提供了一种动力总成，所述动力总成包括电机和与所述电机连接的如第五种申请实施例中所述的电机驱动器，所述电机驱动器用于为所述电机提供交流电，所述电机用于将来自所述电机驱动器的交流电转换为动能。电机驱动器中的功率模组的结构和工作原理可以参考上述实施例的描述，本申请实施例中不再赘述。
一般的，本申请实施例提供的动力总成中包含了所述第五种申请实施例中的电机驱动器，由于所述电机驱动器具有更高的功率转换效率，可以为所述电机提供更高的电能，从而所述电机可以输出更高的动能，因此所述动力总成具有更高的驱动力。同时由于所述电机驱动器，不易损坏，可靠性高，因此有助于提高所述动力总成系统的稳定性与可靠性。
本申请的第七种实施方式提供了一种车辆，所述车辆包括车轮和与所述车轮连接的如第六申请实施例中所述的动力总成，所述动力总成用于为所述车轮提供动力，带动所述车轮前进或后退。本申请实施例中，所述车辆可以为电动车/电动汽车(EV)、纯电动汽车(PEV/BEV)、混合动力汽车(HEV)、增程式电动汽车(REEV)、插电式混合动力汽车(PHEV)、新能源汽车(New Energy Vehicle)等。所述动力总成中的功率模组的结构和工作原理可以参考上述实施例的描述，本申请实施例中不再赘述。
一般的，所述车辆中包含了第六申请实施例中的动力总成，由于所述动力总成可以提供更高的驱动力，因此所述车辆具有更高的动力，为驾驶者提供更好的驾驶体验。同时由于所述动力总成具有更高的稳定性与可靠性，因此所述车辆在整体上具有更高的稳定性与可靠性，为驾驶者提供更高的安全性的同时降低整车的维护成本。
以上，仅为本申请的具体实施方式，但本申请的保护范围并不局限于此，任何熟悉本技术领域的技术人员在本申请揭露的技术范围内，可轻易想到变化或替换，都应涵盖在本申请的保护范围之内。因此，本申请的保护范围应以所述权利要求的保护范围为准。

Claims (20)

  1. 一种功率模组，其特征在于：包括第一基板、第二基板、第一热沉、第二热沉和芯片；
    所述芯片置于所述第一热沉与所述第二热沉之间，所述芯片与所述第一热沉的连接面为所述芯片的第一连接面；
    所述芯片与所述第一热沉通过第一材料连接，所述第一材料具有高导热性能，所述第一材料包括银膏、铜膏、银膜中的一种，所述第一材料通过高温烧结或者扩散焊将所述芯片与所述第一热沉连接；
    所述第一基板置于所述第一热沉远离所述芯片的一面，所述第二基板置于所述第二热沉远离所述芯片的一面。
  2. 根据权利要求1所述的功率模组，其特征在于，所述芯片与所述第一热沉的连接面为所述芯片的第一连接面，所述第一热沉的靠近芯片一面的面积大于等于所述芯片的第一连接面。
  3. 根据权利要求1所述的功率模组，其特征在于，所述芯片置于所述第一热沉与所述第二热沉之间，所述芯片与所述第二热沉的连接面为所述芯片的第二连接面；
    所述芯片与所述第二热沉通过第二材料连接，所述第二材料为软钎料，所述第一材料包括Sn3.5Ag 0.5Cu、SnSb5,、SnSb10,、High Pb、AuSn中一种，所述第二材料通过焊接将所述芯片与所述第一热沉连接。
  4. 根据权利要求1-3任一所述的功率模组，其特征在于，所述芯片与所述第一热沉通过所述第二材料连接，所述芯片与所述第二热沉通过所述第一材料连接；
    所述芯片与所述第一热沉以及所述第二热沉的连接可以同时使用所述第一材料或同时使用所述第二材料。
  5. 根据权利要求1所述的功率模组，其特征在于，包括第一热沉与第二热沉，所述第一热沉与所述第二热沉均具有高导热、高导电特性，所述第一热沉与所述第二热沉的材料包括Cu、CuMo复合材料、金刚石、金刚石-铜复合材料、Al-SiC复合材料等具有高导热的材中的一种。
  6. 根据权利要求1所述的功率模组，其特征在于，包括第一基板与第二基板，所述第一基板与所述第二基板包括：第一导电层与第二导电层，以及位于所述第一导电层与所述第二导电层之间的第一绝缘层；
    所述第一导电层与第二导电层的材料为Cu、Al或其他具有导电导热性的材料；
    所述第一绝缘层为陶瓷或其他具有绝缘性的材料。
  7. 根据权利要求1或6任一所述的功率模组，其特征在于，所述第一基板置于所述第一热沉远离所述芯片的一面，所述第二基板置于所述第二热沉远离所述芯片的一面，包括：
    所述第一基板与所述第一热沉以及第二基板与第二热沉采用第二材料连接；
    或者，所述第一基板与所述第一热沉以及第二基板与第二热沉采用第一材料连接。
  8. 根据权利要求1-4任一项所述的功率模组，其特征在于，所述芯片与所述第二热沉的连接面为所述芯片的第二连接面，所述芯片的所述背连接面具有焊盘，所述焊盘嵌入到所述芯片中，所述焊盘未嵌入芯片的一面与芯片的第二连接面齐平；
    所述焊盘通过第一材料或第二材料与所述第二热沉连接。
  9. 根据权利要求1-4或8任一项所述的功率模组，其特征在于，所述芯片包括绝缘栅双极型晶体管芯片、绝缘栅双极型晶体管芯片与二极管芯片合封芯片、硅金属氧化物半导体场效应晶体管、碳化硅金属氧化物半导体场效应晶体管或氮化镓金属氧化物半导体场效应晶体 管中的一种。
  10. 根据权利要求1-4或8-9任一项所述的功率模组，其特征在于，所述芯片包括至少两个独立的芯片，所述至少两个独立的芯片均置于所述第一热沉与第二热沉之间；
    或，所述至少两个独立的芯片分别置于各自对应的第一热沉与第二热沉之间，所述至少两个独立的芯片各自对应的第一热沉各自独立，彼此直接没有连接；所述至少两个独立的芯片各自对应的第二热沉各自独立，彼此之间没有连接。
  11. 根据权利要求1-10任一所述的功率模组，其特征在于，所述功率模组还包括：端子，所述端子的一端与所述芯片电连接，所述端子的另一端位于所述功率模组外，所述端子用于所述功率模组中的芯片与外界电路连接。
  12. 根据权利要求1-11任一所述的功率模组，其特征在于，所述功率模组还包括：绑定线，所述绑定线的一端与所述芯片电连接，所述绑定线的另一端与所述端子电连接。
  13. 根据权利要求1-12任一所述的功率模组，其特征在于，所述功率模组还包括第一散热器与第二散热器，所述第一散热器和所述第二散热器相对设置，所述第一基板与所述第二基板、所述第一热沉与所述第二热沉以及所述芯片设置于所述第一散热器与所述第二散热器之间；
    所述第一散热器与第一基板通过导热界面材料连接，所述第二散热器与所述第二基板通过导热界面材料连接，所述导热界面材料包括热硅脂、石墨膜、硅凝胶、相变材料中的一种。
  14. 根据权利要求1-13任一所述的功率模组，其特征在于，所述功率模组还包括塑封体，所述塑封体将所述第一基板与所述第二基板、所述第一热沉与所述第二热沉以及所述芯片包裹在一起，使其密封。
  15. 一种功率模组的制造方法，其特征在于，所述方法包括：
    通过烧结或焊接的方式将芯片与第一热沉连接，通过烧结或焊接的方式将芯片与第二热沉连接，形成快速冷却单元；
    通过焊接或烧结的方式将第一基板与第一热沉连接，在第一基板上进行端子焊接，通过绑定线将所述芯片与所述端子连接；
    通过焊接或烧结的方式将第二基板与第二热沉连接，通过塑封或包封对上述结构进行封装，形成功率模组。
  16. 根据权利要求15所述的制造方法，其特征在于，所述方法还包括：
    通过导热界面材料将所述第一基板与第一散热器连接，通过导热界面材料将第二基板与所述第二散热器连接。
  17. 根据权利要求15-16任一项所述的制造方法，其特征在于，所述方法还包括：
    通过烧结方式进行连接时，所采用的连接材料为第一材料；通过焊接方式进行连接时，所采用的材料为第二材料。
  18. 一种电机驱动器，其特征在于：包括电容和至少一个如权利要求1-14任一所述的功率模组，所述功率模组的端子与所述电容电连接，所述电容用于为所述功率模组提供电压，所述功率模组用于将电池包的直流电转换为电机的交流电。
  19. 一种动力总成，其特征在于：包括电机和与所述电机连接的如权利要求18所述的电机驱动器，所述电机驱动器用于为所述电机提供电能，所述电机用于将来自所述电机驱动器的交流电转换为动能。
  20. 一种车辆，其特征在于：包括车轮和与所述车轮连接的如权利要求19所述的动力总成，所述动力总成用于为所述车轮提供动力，带动所述车轮前进或后退。
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