WO2023246271A1 - 一种超导量子芯片连接结构及连接方法 - Google Patents

一种超导量子芯片连接结构及连接方法 Download PDF

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Publication number
WO2023246271A1
WO2023246271A1 PCT/CN2023/089663 CN2023089663W WO2023246271A1 WO 2023246271 A1 WO2023246271 A1 WO 2023246271A1 CN 2023089663 W CN2023089663 W CN 2023089663W WO 2023246271 A1 WO2023246271 A1 WO 2023246271A1
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superconducting quantum
superconducting
connection
quantum
quantum chip
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French (fr)
Inventor
钟有鹏
刘松
俞大鹏
牛晶晶
张礼博
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Shenzhen International Quantum Academy
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Shenzhen International Quantum Academy
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Priority to EP23825924.6A priority Critical patent/EP4546222A4/en
Priority to US18/878,456 priority patent/US20250363403A1/en
Publication of WO2023246271A1 publication Critical patent/WO2023246271A1/zh
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    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06N—COMPUTING ARRANGEMENTS BASED ON SPECIFIC COMPUTATIONAL MODELS
    • G06N10/00—Quantum computing, i.e. information processing based on quantum-mechanical phenomena
    • G06N10/40—Physical realisations or architectures of quantum processors or components for manipulating qubits, e.g. qubit coupling or qubit control
    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06N—COMPUTING ARRANGEMENTS BASED ON SPECIFIC COMPUTATIONAL MODELS
    • G06N10/00—Quantum computing, i.e. information processing based on quantum-mechanical phenomena
    • G06N10/20—Models of quantum computing, e.g. quantum circuits or universal quantum computers
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E40/00—Technologies for an efficient electrical power generation, transmission or distribution
    • Y02E40/60—Superconducting electric elements or equipment; Power systems integrating superconducting elements or equipment

Definitions

  • the invention relates to a superconducting quantum chip connection structure and connection method, and relates to the technical field of superconducting quantum chips.
  • Existing superconducting quantum chip interconnection technology usually uses superconducting coaxial lines made of niobium-titanium alloy to bond or press-fit the superconducting quantum chip.
  • This connection method has large channel loss and the quality of single photon energy level The factor is low (for example: 5.1 ⁇ 10 4 ), and the capacitive coupling of the press-fit connection is weak (for example: about 1MHz).
  • the contact resistance at the interface of different metal bonding connections will also cause a certain amount of energy loss.
  • the purpose of the present invention is to provide a superconducting quantum chip connection structure and connection method that can not only significantly reduce channel loss, but also reduce energy loss at the bonding connection interface.
  • the present invention provides a superconducting quantum chip connection structure for connection between superconducting quantum chips.
  • the superconducting quantum chip includes a quantum substrate and a quantum circuit.
  • the connection structure includes:
  • connection part for connecting the superconducting quantum chip
  • a current conversion part is provided on the quantum substrate, and is used to bond and connect the quantum circuit and the connection part, so that the standing wave current at the bonding interface in the standing wave mode used for communication is close to zero.
  • connection part adopts a coplanar waveguide transmission line
  • the coplanar waveguide transmission line is provided on the superconducting quantum chip
  • the coplanar waveguide transmission line includes a metal conductive strip and Ground conduction strips, when different superconducting quantum chips are connected, the metal conduction strips located on different superconducting quantum chips are connected accordingly, and the two ground conduction strips are connected accordingly.
  • connection part adopts an aluminum coaxial cable
  • the aluminum coaxial cable includes an inner conductor layer, an insulating layer and an outer conductor layer in order from the inside to the outside.
  • the outer conductor layer and the inner conductor layer are coaxially arranged.
  • the inner conductor layer is used to transmit high levels, and the outer conductor layer is used to transmit low levels and also plays a shielding role.
  • the inner conductor layer and the outer conductor layer are arranged coaxially.
  • the conductor layers are made of pure aluminum or aluminum alloy.
  • the superconducting quantum chip connection structure further includes a connecting piece, and the connecting piece includes a first connecting line, a second connecting line and a third connecting line;
  • the first connection line connects the ground layer of the quantum circuit and the outer conductor layer or the ground conductive strip
  • the second connection line connects the current conversion part and the inner conductor layer or the metal conductive strip
  • the third connection line connects the ground layer of the quantum circuit and the outer conductor layer or the ground conductive strip, wherein:
  • the first connection line and the third connection line respectively connect the ground layer of the quantum circuit and the outer conductor layer or the ground conductive strip to form a common ground connection loop.
  • the current conversion part adopts a coplanar waveguide transmission line provided on the quantum chip.
  • the described superconducting quantum chip connection structure further, when the coupling between the superconducting qubit and the channel becomes electrical During inductive coupling, the current conversion part uses a quarter-wavelength coplanar waveguide transmission line to achieve the function of coplanar waveguide impedance conversion;
  • the current conversion part uses a half-wavelength coplanar waveguide transmission line.
  • connection structure also includes a coupler provided on the superconducting quantum chip, one end of the coupler is connected to the quantum circuit, and the other end of the coupler is connected to The current conversion part and the coupler are used to open or close the coupling strength of the quantum circuit and the standing wave mode, thereby controlling the quantum state transmission between superconducting quantum chips.
  • the present invention also provides a superconducting quantum chip connection method, including:
  • the current conversion part is disposed at the superconducting quantum chip coupler and the bonding connection, so that the standing wave current at the bonding interface in the standing wave mode used for communication is close to zero.
  • the described superconducting quantum chip connection method further selects an aluminum coaxial cable as the connection part used to connect the superconducting quantum chip, including:
  • the length of the aluminum coaxial cable is selected based on the standing wave mode frequency and free spectral range.
  • connection part used to connect the superconducting quantum chip is a coplanar waveguide transmission line.
  • the described superconducting quantum chip connection method further selects the current conversion part to be arranged on the superconducting quantum chip. Coplanar waveguide transmission lines on the chip.
  • the current conversion part uses a quarter-wavelength coplanar waveguide transmission line to realize coplanar waveguide impedance conversion. Function: When there is capacitive coupling between the superconducting qubit and the channel, the current conversion part uses a half-wavelength coplanar waveguide transmission line.
  • connection part provided in the superconducting quantum chip connection structure proposed by the present invention can be an aluminum coaxial cable.
  • the aluminum coaxial cable is bonded and connected to the quantum circuit through a connector, and ultimately the intrinsic value of 1.2 ⁇ 10 6 can be achieved.
  • the quality factor is dozens of times higher than the same type of niobium-titanium alloy superconducting coaxial cable.
  • the bonding connection proposed by the present invention which is both made of aluminum, is stronger than the bonding connection between different metals in the prior art, thereby greatly reducing the channel loss and achieving greater strength of coupling.
  • the present invention can be widely used in superconducting quantum chip connections.
  • Figure 1 is a schematic diagram of the connection structure of two superconducting quantum chips in Embodiment 1 of the present invention
  • Figure 2 is a schematic diagram of the connection structure of the superconducting quantum chip in Embodiment 1 of the present invention.
  • Figure 3 is a schematic diagram of the connection structure of the superconducting quantum chip in Embodiment 1 of the present invention.
  • Figure 4 is an effect diagram of the current conversion part of Embodiment 1 of the present invention.
  • Figure 5 is a schematic diagram of the connection structure of two superconducting quantum chips in Embodiment 2 of the present invention.
  • Figure 6 is a flow chart of the superconducting quantum chip connection method in Embodiment 3 of the present invention.
  • connection In this application, unless otherwise expressly stipulated or limited, the terms “installation”, “connection”, “connection”, “fixing” and other terms should be understood in a broad sense. For example, it can be a fixed connection or a detachable connection. , or integrated; it can be a mechanical connection or an electrical connection; it can be a direct connection or an indirect connection through an intermediate medium; it can also be an internal connection between two elements or an interaction between two elements, unless otherwise Clear limits.
  • fixing and other terms should be understood in a broad sense. For example, it can be a fixed connection or a detachable connection. , or integrated; it can be a mechanical connection or an electrical connection; it can be a direct connection or an indirect connection through an intermediate medium; it can also be an internal connection between two elements or an interaction between two elements, unless otherwise Clear limits.
  • the specific meanings of the above terms in this application can be understood according to specific circumstances.
  • first, second, third, etc. may be used herein to describe various elements, components, regions, layers and/or sections, these elements, components, regions, layers and/or sections shall not be referred to as restricted by these terms. These terms are only used to distinguish one element, component, region, layer or section from another region, layer or section. Terms such as “first,””second,” and other numerical terms when used herein do not imply a sequence or order unless clearly indicated by the context. Thus, a first element, component, region, layer or section discussed below could be termed a second element, component, region, layer or section without departing from the teachings of the example embodiments.
  • spatially relative terms may be used herein to describe the relationship of one element or feature to another element or feature as shown in the figures. These relative terms, such as “inner”, “outer”, “inner” ”, “outside”, “below”, “above”, etc. Such spatially relative terms are intended to encompass different orientations of the device in use or operation in addition to the orientation depicted in the figures.
  • the invention provides a superconducting quantum chip connection structure and a connection method, which are used to connect superconducting quantum chips with quantum substrates and quantum circuits.
  • the connection structure includes: a connecting part for connecting the superconducting quantum chip; current conversion The part is arranged on the quantum substrate and is used to bond and connect the quantum circuit and the connection part, so that the standing wave mode used for communication has a standing wave current at the bonding interface close to zero. Therefore, the present invention can not only greatly reduce channel loss and achieve greater strength of coupling, but also significantly reduce energy loss at the bonding connection interface, thereby reducing the impact on quantum state transmission efficiency.
  • Embodiment 1 As shown in Figures 1 to 3, the superconducting quantum chip connection structure provided in this embodiment is used for connection between superconducting quantum chips 1.
  • the superconducting quantum chip 1 includes a quantum substrate and a quantum circuit. Quantum circuits are integrated on the quantum substrate, and the superconducting quantum chip connection structure includes a connection part 2 and a current conversion part 3.
  • connection part 2 is used to connect different superconducting quantum chips 1;
  • the current conversion part 3 is provided on the quantum substrate and is used to connect the quantum circuit and the connection part 2, so that the standing wave current at the bonding interface in the standing wave mode used for communication is close to zero.
  • the connecting part 2 can use an aluminum coaxial cable 21 to The direction toward the center of the aluminum coaxial cable 21 is inward, and the direction away from the center of the aluminum coaxial cable 21 is outward.
  • the aluminum coaxial cable 21 sequentially includes an inner conductor layer 211, an insulating layer 212 and an outer conductor from the inside to the outside.
  • Layer 213, the outer conductor layer 213 and the inner conductor layer 211 are coaxially arranged, and the inner conductor layer 211 and the outer conductor layer 213 are both made of pure aluminum or aluminum alloy.
  • the insulating layer 212 is wrapped around the inner conductor layer 211
  • the outer conductor layer 213 is wrapped around the insulating layer 212 .
  • the inner conductor layer 211 is used to transmit high levels, and the outer conductor layer 213 is used to transmit low levels and also serves as a shield.
  • the insulating layer 212 may be made of low-density polytetrafluoroethylene (ldPTFE).
  • the aluminum coaxial cable 21 produced in this embodiment can achieve an intrinsic quality factor of up to 1.2 ⁇ 10 6 at an extremely low temperature of about 10 mK, at a frequency of about 5 GHz, and at extremely low power at the single photon energy level.
  • the intrinsic quality factor is about two orders of magnitude higher than that of niobium-titanium alloy superconducting coaxial cables.
  • the two ends of the aluminum coaxial cable 21 are connected to two superconducting quantum chips 1.
  • the channel is equivalent to a multi-mode resonance.
  • a cavity has a series of standing wave modes with equally spaced frequencies, and its free spectrum range is on the order of hundreds of megahertz. Since the frequency interval between different standing wave modes is large enough, communication can be carried out through one of the standing wave modes, and the influence of adjacent standing wave modes is small and can be ignored.
  • the superconducting quantum chip connection structure also includes a connector 4.
  • One end of the connector 4 is connected to the aluminum coaxial cable 21, and the other end of the connector 4 is connected to the current conversion part.
  • One end of the current conversion part 3 and the other end of the current conversion part 3 are connected to the quantum circuit. Therefore, in this embodiment, the superconducting quantum chip 1 and the aluminum coaxial cable 21 are bonded and connected by using the connector 4 .
  • the connector 4 can be any metal connector, and is not limited here.
  • the connector 4 includes a first connection line 41 , a second connection line 42 and a third connection line 43 .
  • the first connection line 41 connects the ground layer of the quantum circuit and the outer conductor layer 213;
  • the second connection line 42 connects the current conversion part 3 and the inner conductor layer 211;
  • the third connection line 43 connects the ground layer of the quantum circuit and the outer conductor layer 213,
  • the first connection line 41 and the third connection line 43 respectively connect the ground layer and the outer conductor layer 213 of the quantum circuit, and form a common ground connection loop. Since the inner conductor layer 211 It is made of pure aluminum or aluminum alloy. Quantum circuits are usually made of aluminum.
  • the connecting piece in this embodiment can also be made of aluminum alloy connecting piece 4 . Therefore, a strong bonding connection can be easily formed between the aluminum coaxial cable 21 and the superconducting quantum chip 1 through the aluminum alloy connector 4 .
  • the superconducting quantum chip 1 is also provided with a coupler 5.
  • One end of the coupler 5 is connected to the quantum circuit, and the other end of the coupler 5 is connected to the current conversion part 3.
  • the coupler 5 is It is used to turn on or off the coupling strength between the quantum circuit and the standing wave mode, thereby controlling the quantum state transmission between superconducting quantum chips. If there is no coupler 5, the standing wave mode will always be coupled with the quantum circuit, causing interference to the quantum circuit.
  • the current conversion part 3 can use a coplanar waveguide transmission line provided on the quantum chip to realize the function of coplanar waveguide impedance conversion.
  • a coplanar waveguide is provided on the quantum substrate. Transmission line 31, one end of the coplanar waveguide transmission line 31 is connected to the coupler 5, and the other end is connected to the bonding connection of the connector 4.
  • a quarter-wavelength coplanar waveguide transmission line 31 can be used.
  • the length of the coplanar waveguide transmission line is exactly equal to a quarter of the wavelength and is connected between the coupler 5 and the bonding point, the coplanar waveguide transmission line is equivalent to a quarter-wavelength converter.
  • the characteristic of the coplanar waveguide transmission line 31 is that it can convert inductively coupled high current and low voltage into high voltage and low current.
  • the length of the coplanar waveguide transmission line 31 is calculated based on the operating frequency.
  • the superconducting quantum chip 1 uses a standing wave mode to transmit quantum states, and quantum state transmission between chips can be carried out through one of the standing wave modes.
  • the wavelength of the standing wave mode is four times the length of the current conversion part 3
  • the coplanar waveguide impedance conversion makes the standing wave current at the bonding interface close to zero, which can significantly reduce the resistance of the bonding interface and thereby reduce the loss, thus reducing the impact on the quantum state. transmission effects.
  • the wavelength of the standing wave mode is equal to four times the length of the coplanar waveguide impedance converter. At this time, its quality factor is the highest, which can reach 6 ⁇ 10 5 .
  • the current conversion part 3 can use a half-wavelength coplanar waveguide. Transmission line.
  • the superconducting quantum chip uses a superconducting circuit composed of a Josephson structure to realize a two-level system.
  • the material used is aluminum.
  • the corresponding circuit shape is etched on the aluminum film, and then microwave signals are used to pattern it. Take control.
  • Applying the connection part 2 and the current conversion part 3 of this embodiment to a superconducting quantum chip can achieve a single photon energy level quality factor of up to 8.1 ⁇ 10 5 for the superconducting quantum chip connection channel, which is more than an order of magnitude higher than the existing technology. , reaching the level of frequency-tunable qubits on superconducting quantum chips, achieving more than 99% cross-chip quantum state transmission fidelity.
  • the quantum circuit of the aluminum-coated superconducting quantum chip 1, the connector 4 made of aluminum alloy and the aluminum coaxial cable 21 made of pure aluminum form a connection of the same material, which is more conducive to realizing the bonding connection and also Makes bonded connections stronger.
  • the present invention has undergone a large number of experimental tests, continuously optimized experimental parameters, and selected coaxial cables made of pure aluminum to realize the connection between superconducting quantum chips.
  • the superconducting quantum chip 1 works in an extremely low temperature environment of about 10mK, and the superconducting transition temperature of aluminum is 1.2K, which is much higher than 10mK, and the aluminum coaxial cable operates at an extremely low temperature of about 10mK at a frequency of about 5GHz. range, at very low power at the single photon energy level, can have an intrinsic quality factor of up to 1.2 ⁇ 10 6 , which is about two orders of magnitude higher than niobium titanium alloy superconducting coaxial cables.
  • the quantum circuits and connectors of the superconducting quantum chip are all made of aluminum. The bonding connection between metals of the same material is stronger, which can significantly reduce channel loss and achieve greater intensity of coupling.
  • Embodiment 2 is basically the same as Embodiment 1. The difference is that, as shown in Figure 5, the connection part 2 of this embodiment can also use a coplanar waveguide transmission line 6.
  • the coplanar waveguide transmission line 6 has a small size. , light weight and planar structure make it easy to obtain the advantages of linear polarization, circular polarization, dual polarization and multi-band operation.
  • a coplanar waveguide transmission line 6 is formed on the superconducting quantum chip.
  • the coplanar waveguide transmission line 6 includes a dielectric substrate and three conductive strips, with a metal conductive strip in the middle and grounded conductive strips on both sides. When the two superconducting quantum chips 1 are connected , the metal conduction bands located on different superconducting quantum chips 1 are connected accordingly, and the other two grounded conduction bands are connected accordingly.
  • Embodiment 3 As shown in Figure 6, this embodiment also proposes a superconducting quantum chip connection method. Specifically, an aluminum coaxial cable is used as an embodiment for detailed description, including the steps:
  • connection part 2 Based on the working temperature of the superconducting quantum chip and the superconducting transition temperature of the metal, select the connection part 2 for connecting the superconducting quantum chip 1.
  • the superconducting coaxial cable made of niobium-titanium alloy has a superconducting transition temperature of 9.7K, and the superconducting coaxial cable made of niobium-titanium alloy can work well in the liquid helium temperature zone.
  • the actual superconducting quantum chip works in an extremely low temperature environment of about 10mK, which is far lower than the liquid helium temperature range. Therefore, according to the lower superconducting transition temperature, it is necessary to select a suitable material for the connection part to make the bonding connection easier to achieve and Stronger.
  • this embodiment uses a coaxial cable made of aluminum. Since the superconducting transition temperature of aluminum is 1.2K, which is much higher than 10mK, superconducting coaxial cables made of pure aluminum have extremely low single photon energy levels at extremely low temperatures of about 10mK and at frequencies of about 5GHz. Under high power, it has an intrinsic quality factor of up to 1.2 ⁇ 10 6 , which is much higher than that of niobium-titanium alloy superconducting coaxial cable. In addition, the quantum circuit of the superconducting quantum chip is made of aluminum, so choosing a coaxial cable made of aluminum can better realize the connection between the same materials.
  • the superconducting quantum chip 1 uses the standing wave mode to transmit the quantum state.
  • the length L of the aluminum coaxial cable 21 is determined by the spectral range.
  • the length L of the aluminum coaxial cable 21 is an integer multiple of the half-wavelength of the standing wave mode.
  • N is an integer.
  • the speed of light divided by the frequency of the standing wave mode equals the wavelength of the standing wave mode: Among them, f is the frequency, and c is the propagation speed of electromagnetic waves in the aluminum coaxial line. therefore
  • the superconducting quantum chip circuit is made of aluminum and the coaxial cable is also made of pure aluminum, choosing the connector 4 made of aluminum alloy can make the connection easier and stronger.
  • this embodiment selects a coplanar waveguide transmission line of corresponding length to implement impedance conversion. Based on the frequency of the standing wave mode for communication, when the wavelength of the standing wave mode for communication is equal to four times the length of the coplanar waveguide transmission line, the coplanar waveguide transmission line causes the standing wave mode for communication to stand at the bonding interface. The wave current is close to zero, thereby significantly reducing the loss caused by the resistance of the bonding interface, thereby reducing the impact of the loss of the bonding interface on quantum state transmission.
  • the aluminum coaxial cable 21 and the superconducting quantum chip are bonded and connected using the connector 4, because Aluminum is very suitable for bonding connections.
  • Coaxial cables and superconducting quantum chips of the same material can easily form strong bonding connections under the action of aluminum connectors.
  • the resistance at the bonding interface of aluminum alloy connectors must be An order of magnitude smaller than the interface resistance using niobium-titanium alloy.
  • the bonding connection is stronger, the resulting channel loss can also be reduced.
  • the coplanar waveguide transmission line 31 is connected to the coupler 5 and the second connection line 42 of the connector 4, specifically: the quarter-wavelength coplanar waveguide transmission line 31 is connected to the coupler 5 and the second connection line 42. , and further connected to the inner conductor layer 211 of the aluminum coaxial cable 21 .
  • the target loss of the bonding connection interface is set to zero loss.
  • This application uses the standing wave mode to transmit the quantum state, and carries out the quantum state transmission between chips through one of the standing wave modes.
  • a quarter-wavelength ( ⁇ /4) coplanar waveguide transmission line 13 is connected to the coupler 5 and the bonding connection, and when the wavelength of the standing wave mode is equal to four times the length of the coplanar waveguide transmission line, the standing wave mode for communication is The standing wave current at the bonding interface is close to zero, reaching the target loss, thereby significantly reducing the loss caused by resistance at the bonding interface.
  • the superconducting quantum chip connection structure and connection method proposed by the present invention can achieve an intrinsic quality factor of up to 1.2 ⁇ 10 6 , which is dozens of times higher than the same type of niobium-titanium alloy superconducting coaxial cable; At the same time, the same materials are more conducive to achieving a stronger bonding connection, which can significantly reduce channel loss, thereby achieving greater intensity of coupling; in addition, when the wavelength of the standing wave mode is equal to four times the length of the impedance conversion part, it can Reduce the loss at the bonding interface, thereby reducing the impact on quantum state transmission. This method solves the problems of channel loss and energy loss at the bonding connection interface in existing superconducting quantum chip connection technology.

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Abstract

本发明涉及一种超导量子芯片连接结构，用于超导量子芯片之间的连接，所述超导量子芯片包括量子基片和量子线路，该连接结构包括：连接部，用于连接超导量子芯片；电流转换部，设置在量子基片上，用于连接量子线路和连接部，使得用于通信的驻波模式在键合界面处的驻波电流接近于零。本发明不仅能够使得信道损耗大幅度降低，实现了较大强度的耦合，而且能够显著降低键合连接界面处的能量损耗，从而减少对量子态传输效率的影响。

Description

一种超导量子芯片连接结构及连接方法 技术领域
本发明是关于一种超导量子芯片连接结构及连接方法，涉及超导量子芯片技术领域。
背景技术
随着超导量子芯片技术逐渐发展，超导量子芯片集成的量子比特数越来越多，然而受限于晶圆面积、良率、控制线扇出等条件，在单个芯片上集成更多的比特变得越来越困难。要进一步集成更多的超导量子比特，可以通过模块化的方式，把多个超导量子芯片连接起来，构成一个更大规模的分布式量子处理器。超导量子芯片之间的连接需要使用低损耗信道以避免退相干，在这个过程中需要选择合适的连接方式，以降低信道损耗的同时，实现较大强度的耦合。
现有超导量子芯片互联技术通常使用铌钛合金制作的超导同轴线与超导量子芯片进行键合连接或者压合连接，这种连接方式的信道损耗较大，单光子能量水平的品质因子较低(如：5.1×104)，而且压合连接的电容耦合较弱(如：1MHz左右)，此外，不同金属键合连接界面处的接触电阻还会造成一定的能量损耗。
发明内容
针对上述问题，本发明的目的是提供一种不仅能够使得信道损耗大幅度降低，而且能够降低键合连接界面处能量损耗的超导量子芯片连接结构及连接方法。
为了实现上述发明目的，本发明提出的技术方案为：
第一方面，本发明提供一种超导量子芯片连接结构，用于超导量子芯片之间的连接，所述超导量子芯片包括量子基片和量子线路，该连接结构包括：
连接部，用于连接所述超导量子芯片；
电流转换部，设置在所述量子基片上，用于键合连接所述量子线路和连接部，使得用于通信的驻波模式在键合界面处的驻波电流接近于零。
所述的超导量子芯片连接结构，进一步地，所述连接部采用共面波导传输线，所述共面波导传输线设置在所述超导量子芯片上，所述共面波导传输线包括金属导带和接地导带，当不同的超导量子芯片连接时，位于不同超导量子芯片上的金属导带相应连接，两条接地导带相应连接。
所述的超导量子芯片连接结构，进一步地，所述连接部采用铝同轴线缆，所述铝同轴线缆从内到外依次包括内导体层、绝缘层和外导体层，所述外导体层与内导体层同轴设置，所述内导体层用于传送高电平，所述外导体层用于传输低电平，同时起到屏蔽作用，其中，所述内导体层和外导体层均采用纯铝或铝合金制作。
所述的超导量子芯片连接结构，进一步地，该连接结构还包括连接件，所述连接件包括第一连接线、第二连接线和第三连接线；
所述第一连接线连接所述量子线路的接地层和所述外导体层或所述接地导带；
所述第二连接线连接所述电流转换部和所述内导体层或所述金属导带；
所述第三连接线连接所述量子线路的接地层和所述外导体层或所述接地导带，其中：
所述第一连接线和第三连接线分别连接所述量子线路的接地层和所述外导体层或所述接地导带，形成共地连接回路。
所述的超导量子芯片连接结构，进一步地，所述电流转换部采用设置在所述量子芯片上的共面波导传输线。
所述的超导量子芯片连接结构，进一步地，当超导量子比特和信道的耦合为电 感耦合时，所述电流转换部采用四分之一波长共面波导传输线，实现共面波导阻抗转换的作用；
当超导量子比特和信道之间为电容耦合时，所述电流转换部采用二分之一波长的共面波导传输线。
所述的超导量子芯片连接结构，进一步地，该连接结构还包括设置在所述超导量子芯片上的耦合器，所述耦合器一端连接所述量子线路，所述耦合器的另一端连接所述电流转换部，所述耦合器用于打开或者关闭量子线路和驻波模式的耦合强度，从而控制超导量子芯片之间的量子态传输。
第二方面，本发明还提供一种超导量子芯片连接方法，包括：
选择用于连接超导量子芯片的连接部；
基于用于通信的驻波模式频率和超导量子比特和信道之间耦合方式，选择电流转换部；
使用连接部将不同的超导量子芯片进行键合连接；
将电流转换部设置在超导量子芯片耦合器和键合连接处，使得用于通信的驻波模式在键合界面处的驻波电流接近于零。
所述的超导量子芯片连接方法，进一步地，选择用于连接超导量子芯片的连接部为铝同轴线缆，包括：
选择铝同轴线缆材质为纯铝或铝合金；
基于驻波模式频率和自由谱范围，选择铝同轴线缆的长度。
所述的超导量子芯片连接方法，进一步地，选择用于连接超导量子芯片的连接部为共面波导传输线。
所述的超导量子芯片连接方法，进一步地，选择电流转换部为设置在超导量子 芯片上的共面波导传输线。
所述的超导量子芯片连接方法，进一步地，当超导量子比特和信道的耦合为电感耦合时，所述电流转换部采用四分之一波长共面波导传输线，实现共面波导阻抗转换的作用；当超导量子比特和信道之间为电容耦合时，所述电流转换部采用二分之一波长的共面波导传输线。
本发明由于采取以上技术方案，其具有以下优点：
1、本发明提出的超导量子芯片连接结构设置的连接部可以为铝同轴线缆，将铝同轴线缆通过连接件键合连接于量子线路，最终能够达到1.2×106的本征品质因子，比同类型的铌钛合金超导同轴线缆要高数十倍。
2、本发明提出的同为铝材质的键合连接要比现有技术中不同金属间的键合连接更加牢固，从而使得信道损耗大幅度降低，实现了较大强度的耦合。
综上，本发明可以广泛应用于超导量子芯片连接中。
附图说明
通过阅读下文优选实施方式的详细描述，各种其他的优点和益处对于本领域普通技术人员将变得清楚明了。附图仅用于示出优选实施方式的目的，而并不认为是对本发明的限制。在整个附图中，用相同的附图标记表示相同的部件。在附图中：
图1为本发明实施例1的两个超导量子芯片连接结构示意图；
图2为本发明实施例1的超导量子芯片连接结构示意图；
图3为本发明实施例1的超导量子芯片连接结构的示意图；
图4为本发明实施例1的电流转换部的效果图；
图5为本发明实施例2的两个超导量子芯片连接结构示意图；
图6为本发明实施例3的超导量子芯片连接方法的流程图。
具体实施方式
应理解的是，文中使用的术语仅出于描述特定示例实施方式的目的，而无意于进行限制。除非上下文另外明确地指出，否则如文中使用的单数形式“一”、“一个”以及“所述”也可以表示包括复数形式。术语“包括”、“包含”、“含有”以及“具有”是包含性的，并且因此指明所陈述的特征、步骤、操作、元件和/或部件的存在，但并不排除存在或者添加一个或多个其它特征、步骤、操作、元件、部件、和/或它们的组合。文中描述的方法步骤、过程、以及操作不解释为必须要求它们以所描述或说明的特定顺序执行，除非明确指出执行顺序。还应当理解，可以使用另外或者替代的步骤。
在本申请中，除非另有明确的规定或限定，术语“安装”、“相连”、“连接”、“固定”等术语应做广义理解，例如，可以是固定连接，也可以是可拆卸连接，或成一体；可以是机械连接，也可以是电连接；可以是直接相连，也可以通过中间媒介间接相连，还可以是两个元件内部的连通或两个元件的相互作用关系，除非另有明确的限定。对于本领域的普通技术人员而言，可以根据具体情况理解上述术语在本申请中的具体含义。
尽管可以在文中使用术语第一、第二、第三等来描述多个元件、部件、区域、层和/或部段，但是，这些元件、部件、区域、层和/或部段不应被这些术语所限制。这些术语可以仅用来将一个元件、部件、区域、层或部段与另一区域、层或部段区分开。除非上下文明确地指出，否则诸如“第一”、“第二”之类的术语以及其它数字术语在文中使用时并不暗示顺序或者次序。因此，以下讨论的第一元件、部件、区域、层或部段在不脱离示例实施方式的教导的情况下可以被称作第二元件、部件、区域、层或部段。
为了便于描述，可以在文中使用空间相对关系术语来描述如图中示出的一个元件或者特征相对于另一元件或者特征的关系，这些相对关系术语例如为“内部”、“外部”、“内侧”、“外侧”、“下面”、“上面”等。这种空间相对关系术语意于包括除图中描绘的方位之外的在使用或者操作中装置的不同方位。
针对现有超导量子芯片连接技术中的信道本征损耗以及键合连接界面处能量损耗的问题。本发明提供一种超导量子芯片连接结构及连接方法，用于具有量子基片和量子线路的超导量子芯片的连接，该连接结构包括：连接部，用于连接超导量子芯片；电流转换部，设置在量子基片上，用于键合连接量子线路和连接部，使得用于通信的驻波模式在键合界面处的驻波电流接近于零。因此，本发明不仅能够使得信道损耗大幅度降低，实现了较大强度的耦合，而且能够显著降低键合连接界面处的能量损耗，从而减少对量子态传输效率的影响。
下面将参照附图更详细地描述本发明的示例性实施方式。虽然附图中显示了本发明的示例性实施方式，然而应当理解，可以以各种形式实现本发明而不应被这里阐述的实施方式所限制。相反，提供这些实施方式是为了能够更透彻地理解本发明，并且能够将本发明的范围完整的传达给本领域的技术人员。
实施例1：如图1～图3所示，本实施例提供的超导量子芯片连接结构，用于超导量子芯片1之间的连接，超导量子芯片1包括量子基片和量子线路，量子基片上集成设置有量子线路，超导量子芯片连接结构包括连接部2和电流转换部3。
连接部2，用于连接不同的超导量子芯片1；
电流转换部3设置在量子基片上，用于连接量子线路和连接部2，使得用于通信的驻波模式在键合界面处的驻波电流接近于零。
在一个优选的实施例中，如图2所示，连接部2可以采用铝同轴线缆21，以朝 向铝同轴线缆21的中心为向内，以远离铝同轴线缆21的中心为向外，铝同轴线缆21从内到外依次包括内导体层211、绝缘层212和外导体层213，外导体层213与内导体层211同轴设置，内导体层211和外导体层213均为纯铝或铝合金制作。绝缘层212包裹设置在内导体层211的外侧，外导体层213包裹设置在绝缘层212的外侧。内导体层211用于传送高电平，外导体层213用于传输低电平，同时起到屏蔽作用。一些实现中，绝缘层212可采用低密度聚四氟乙烯(ldPTFE)。
本实施例制作的铝同轴线缆21在10mK左右的极低温下，在5GHz左右的频率时，在单光子能量级别的极低功率下，能够实现高达1.2×106的本征品质因子，比铌钛合金超导同轴线缆的本征品质因子要高出约两个数量级。铝同轴线缆21两端连接两个超导量子芯片1，在连接两个超导量子芯片1的铝同轴线缆21较短，例如一米以内的时候，信道相当于一个多模谐振腔，具有一系列频率等间距分布的驻波模式，其自由谱范围在百兆赫兹量级。由于不同驻波模式间的频率间隔足够大，可以通过其中一个驻波模式进行通信，相邻驻波模式的影响较小，可以忽略。
在一个优选的实施例中，如图3所示，该超导量子芯片连接结构还包括连接件4，连接件4的一端连接铝同轴线缆21，连接件4的另一端连接电流转换部3的一端，电流转换部3的另一端连接量子线路。因此，本实施例通过使用连接件4将超导量子芯片1与铝同轴线缆21进行键合连接。
进一步地，连接件4可以采用任何金属连接件，在此不做限制。连接件4包括第一连接线41、第二连接线42和第三连接线43。第一连接线41连接量子线路的接地层和外导体层213；第二连接线42连接电流转换部3和内导体层211；第三连接线43连接量子线路的接地层和外导体层213，第一连接线41和第三连接线43分别连接量子线路的接地层和外导体层213，并形成共地连接回路。由于内导体层211 为纯铝或铝合金制作，量子线路通常为铝制作，为了使得连接更容易且更加牢固，本实施例的连接件也可以采用铝合金连接件4。因此，铝同轴线缆21和超导量子芯片1之间通过铝合金的连接件4可以很容易形成较强的键合连接。
在一个优选实施例中，如图1所示，超导量子芯片1上还设置有耦合器5，耦合器5一端连接量子线路，耦合器5的另一端连接电流转换部3，耦合器5用于打开或者关闭量子线路和驻波模式的耦合强度，从而控制超导量子芯片之间的量子态传输，如果没有耦合器5，驻波模式会一直和量子线路耦合，对量子线路造成干扰，设置有耦合器5，平时将耦合器5关闭，驻波模式不会干扰量子线路，需要进行跨芯片量子态传输的时候打开耦合器5。
在一个优选的实施例中，电流转换部3可以采用设置在量子芯片上的共面波导传输线，用于实现共面波导阻抗转换的作用，如图2所示，量子基片上设置有共面波导传输线31，共面波导传输线31一端连接耦合器5，另一端连接连接件4的键合连接处。
进一步地，当超导量子比特和信道的耦合是电感耦合时(电感耦合的特点是在耦合处电压极小，电流极大)，可以采用四分之一波长共面波导传输线31。当共面波导传输线的长度刚好等于波长的四分之一，且连接于耦合器5和键合点之间时，共面波导传输线相当于一个四分之一波长转换器。共面波导传输线31的特点是可以把电感耦合的高电流低电压转换成高电压低电流。共面波导传输线31是根据工作频率计算其长度的，它的长度等于设计频率对应波长的四分之一，可以看作是四分之一波长(λ/4)阻抗转换器。通过一个四分之一波长共面波导阻抗转换器连接耦合器5和键合连接处。超导量子芯片1采用驻波模式传输量子态，可以通过其中一个驻波模式进行芯片间的量子态传输，当驻波模式的波长与电流转换部3长度的四 倍相等时(也就是四分之一波长)，共面波导阻抗转换使得键合界面处的驻波电流接近于零，能够显著降低键合界面的电阻从而降低损耗，因此减小了对量子态传输的影响。如图4所示，在4.89GHz左右时，驻波模式的波长与共面波导阻抗转换器长度的四倍相等，此时它的品质因子最高，可达到6×105。
更进一步地，当超导量子比特和信道之间是通过电容耦合时(电容耦合的特点是耦合处电压极大，电流极小)，电流转换部3可以采用二分之一波长的共面波导传输线。
在一个优选实施例中，超导量子芯片利用约瑟夫森结构成的超导电路来实现二能级系统，所用材质是铝，通过在铝膜上刻蚀相应的电路形状，进而用微波信号对其进行控制。将本实施例的连接部2和电流转换部3应用于超导量子芯片，能够实现超导量子芯片连接通道高达8.1×105的单光子能量水平品质因子，较现有技术提高了一个数量级以上，达到了超导量子芯片上频率可调量子比特的水平，实现了99％以上的跨芯片量子态传输保真度。因此，镀铝膜的超导量子芯片1的量子线路、铝合金材质的连接件4与纯铝材质的铝同轴线缆21，形成一个相同材质的连接，更有利于实现键合连接，也使得键合连接更加牢固。
综上所述，本发明经过大量的实验测试，不断优化实验参数，选择使用纯铝材质的同轴线缆实现超导量子芯片之间的连接。由于超导量子芯片1工作在10mK左右的极低温环境，而铝的超导转变温度是1.2K，远高于10mK，且铝同轴线缆在10mK左右的极低温下，在5GHz左右的频率范围，在单光子能量级别的极低功率下，可具有高达1.2×106的本征品质因子，比铌钛合金超导同轴线缆高出约两个数量级。并且，超导量子芯片的量子线路以及连接件均为铝材质，同材质金属间的键合连接更加牢固，能够显著降低信道损耗，实现较大强度的耦合。
实施例2：本实施例2与实施例1基本相同，不同之处在于，如图5所示，本实施例的连接部2还可以采用共面波导传输线6，共面波导传输线6具有体积小、重量轻和平面结构等优点，使其便于获得线极化、圆极化、双极化和多频段工作等优点。超导量子芯片上形成有共面波导传输线6，共面波导传输线6包括介质基片和三条导带，中间为金属导带，两侧为接地导带，当两个超导量子芯片1连接时，位于不同超导量子芯片1上的金属导带相应连接，其他两条接地导带相应连接。
实施例3：如图6所示，本实施例还提出一种超导量子芯片连接方法，具体是以铝同轴线缆作为实施例进行详细说明，包括步骤：
S1、基于超导量子芯片的工作温度以及金属的超导转变温度，选择用于连接超导量子芯片1的连接部2。
S11、选择铝材质的同轴线缆
现有技术中因为铌钛合金制作的超导同轴线缆的超导转变温度达到9.7K，铌钛合金制作的超导同轴线缆可以在液氦温区工作良好。然而实际的超导量子芯片工作在10mK左右的极低温环境，远远低于液氦温区，因此根据较低的超导转变温度，需要选择合适材质的连接部使得键合连接更加容易实现且更加牢固。
具体地，本实施例采用铝材质的同轴线缆。由于铝的超导转变温度是1.2K，远高于10mK，纯铝制作的超导同轴线缆在10mK左右的极低温下，以及在5GHz左右的频率时，在单光子能量级别的极低功率下，具有高达1.2×106的本征品质因子，远远高于铌钛合金超导同轴线缆。另外，超导量子芯片的量子线路为铝材质，因此选择铝材质的同轴线缆可以更好实现相同材质间的连接。
S12、基于驻波模式频率和自由谱范围，选择铝同轴线缆21的长度。
具体地，超导量子芯片1采用驻波模式传输量子态，根据驻波模式的频率和自 由谱范围决定铝同轴线缆21的长度L，铝同轴线缆21的长度L是驻波模式的半波长的整数倍其中，N是一个整数。光速除以驻波模式的频率等于驻波模式的波长：其中，f是频率，c是电磁波在铝同轴线的传播速度。因此
因此，需要选择一个合适的整数N来确定同轴线的长度L，可以得到所以相邻两个驻波模式的频率差，也就是自由谱范围例如f＝5GHz左右，选取N＝10左右，可以得到Δf＝500MHz左右，对应的L＝0.2m左右，以此为例进行说明，不限于此，可以根据实际需要进行确定。
S13、根据超导量子芯片电路的材质和铝同轴线缆的材质，选择相应材质的连接件。
具体地，由于超导量子芯片电路的材质为铝材质，同轴线缆也为纯铝材质，选择铝合金材质的连接件4，可以使得连接更容易，且更加牢固。
S2、基于用于通信的驻波模式频率和超导量子比特和信道之间耦合方式，选择电流转换部3。
具体地，由于本实施例超导量子比特和信道之间耦合为电感耦合，本实施例选择对应长度的共面波导传输线实现阻抗转换。基于用于通信的驻波模式频率，当通信的驻波模式的波长与共面波导传输线的长度的四倍相等时，该共面波导传输线使得用于通信的驻波模式在键合界面处的驻波电流接近于零，从而显著降低键合界面的电阻导致的损耗，进而降低键合连接界面的损耗对量子态传输的影响。
S3、将铝同轴线缆21和超导量子芯片使用连接件4进行键合连接。
具体地，使用连接件4将铝同轴线缆21和超导量子芯片进行键合连接，由于 铝材质非常适合键合连接，同样材质的同轴线缆和超导量子芯片很容易在铝材质连接件的作用下，形成很牢固的键合连接，铝合金连接件键合界面处的电阻要比使用铌钛合金的界面电阻小一个数量级。此外，键合连接更加牢固的同时，还能降低产生的信道损耗。
进一步地，将共面波导传输线31连接于耦合器5和连接件4的第二连接线42，具体为：将四分之一波长共面波导传输线31连接于耦合器5和第二连接线42，进而与铝同轴线缆21的内导体层211连接。
更进一步地，为了使得损耗更少，将键合连接界面的目标损耗设定为零损耗，本申请采用驻波模式传输量子态，通过其中一个驻波模式进行芯片间量子态传输，通过一个四分之一波长(λ/4)共面波导传输线13连接在耦合器5和键合连接处，当驻波模式的波长与共面波导传输线长度的四倍相等时，使得用于通信的驻波模式在键合界面处的驻波电流接近于零，达到目标损耗，从而显著降低键合界面处电阻导致的损耗。
综上所述，本发明提出的超导量子芯片连接结构及连接方法，实现高达1.2×106的本征品质因子，比同类型的铌钛合金超导同轴线缆要高数十倍；同时，相同材质间更有利于实现较为牢固的键合连接，能够显著降低信道损耗，从而实现较大强度的耦合；此外，当驻波模式的波长与阻抗转换部长度的四倍相等时，能够降低键合连接界面处的损耗，从而减少对量子态传输的影响。该方法解决了现有超导量子芯片连接技术中信道损耗以及键合连接界面处能量损耗的问题。
本说明书中的各个实施例均采用递进的方式描述，各个实施例之间相同相似的部分互相参见即可，每个实施例重点说明的都是与其他实施例的不同之处。在本说明书的描述中，参考术语“一个实施例”、“一些实现”等的描述意指结合该实施例或 示例描述的具体特征、结构、材料或者特点包含于本说明书实施例的至少一个实施例或示例中。在本说明书中，对上述术语的示意性表述不必须针对的是相同的实施例或示例。而且，描述的具体特征、结构、材料或者特点可以在任一个或多个实施例或示例中以合适的方式结合。此外，在不相互矛盾的情况下，本领域的技术人员可以将本说明书中描述的不同实施例或示例以及不同实施例或示例的特征进行结合和组合。
最后应说明的是：以上实施例仅用以说明本发明的技术方案，而非对其限制；尽管参照前述实施例对本发明进行了详细的说明，本领域的普通技术人员应当理解：其依然可以对前述各实施例所记载的技术方案进行修改，或者对其中部分技术特征进行等同替换；而这些修改或者替换，并不使相应技术方案的本质脱离本发明各实施例技术方案的精神和范围。

Claims (12)

  1. 一种超导量子芯片连接结构，用于超导量子芯片之间的连接，所述超导量子芯片包括量子基片和量子线路，其特征在于，该连接结构包括：
    连接部，用于连接所述超导量子芯片；
    电流转换部，设置在所述量子基片上，用于键合连接所述量子线路和连接部，使得用于通信的驻波模式在键合界面处的驻波电流接近于零。
  2. 根据权利要求1所述的超导量子芯片连接结构，其特征在于，所述连接部采用共面波导传输线，所述共面波导传输线设置在所述超导量子芯片上，所述共面波导传输线包括金属导带和接地导带，当不同的超导量子芯片连接时，位于不同超导量子芯片上的金属导带相应连接，两条接地导带相应连接。
  3. 根据权利要求1所述的超导量子芯片连接结构，其特征在于，所述连接部采用铝同轴线缆，所述铝同轴线缆从内到外依次包括内导体层、绝缘层和外导体层，所述外导体层与内导体层同轴设置，所述内导体层用于传送高电平，所述外导体层用于传输低电平，同时起到屏蔽作用，其中，所述内导体层和外导体层均采用纯铝或铝合金制作。
  4. 根据权利要求2或3所述的超导量子芯片连接结构，其特征在于，该连接结构还包括连接件，所述连接件包括第一连接线、第二连接线和第三连接线；
    所述第一连接线连接所述量子线路的接地层和所述外导体层或所述接地导带；
    所述第二连接线连接所述电流转换部和所述内导体层或所述金属导带；
    所述第三连接线连接所述量子线路的接地层和所述外导体层或所述接地导带，其中：
    所述第一连接线和第三连接线分别连接所述量子线路的接地层和所述外导体 层或所述接地导带，形成共地连接回路。
  5. 根据权利要求1～3任一项所述的超导量子芯片连接结构，其特征在于，所述电流转换部采用设置在所述量子芯片上的共面波导传输线。
  6. 根据权利要求5所述的超导量子芯片连接结构，其特征在于，当超导量子比特和信道的耦合为电感耦合时，所述电流转换部采用四分之一波长共面波导传输线，实现共面波导阻抗转换的作用；
    当超导量子比特和信道之间为电容耦合时，所述电流转换部采用二分之一波长的共面波导传输线。
  7. 根据权利要求1～3任一项所述的超导量子芯片连接结构，其特征在于，该连接结构还包括设置在所述超导量子芯片上的耦合器，所述耦合器一端连接所述量子线路，所述耦合器的另一端连接所述电流转换部，所述耦合器用于打开或者关闭量子线路和驻波模式的耦合强度，从而控制超导量子芯片之间的量子态传输。
  8. 一种超导量子芯片连接方法，其特征在于包括：
    选择用于连接超导量子芯片的连接部；
    基于用于通信的驻波模式频率和超导量子比特和信道之间耦合方式，选择电流转换部；
    使用连接部将不同的超导量子芯片进行键合连接；
    将电流转换部设置在超导量子芯片的量子线路和键合连接处，使得用于通信的驻波模式在键合界面处的驻波电流接近于零。
  9. 根据权利要求8所述的超导量子芯片连接方法，其特征在于，选择用于连接超导量子芯片的连接部为铝同轴线缆，包括：
    选择铝同轴线缆材质为纯铝或铝合金；
    基于驻波模式频率和自由谱范围，选择铝同轴线缆的长度。
  10. 根据权利要求8所述的超导量子芯片连接方法，其特征在于，选择用于连接超导量子芯片的连接部为共面波导传输线。
  11. 根据权利要求8～10任一项所述的超导量子芯片连接方法，其特征在于，选择电流转换部为设置在超导量子芯片上的共面波导传输线。
  12. 根据权利要求11所述的超导量子芯片连接方法，其特征在于，当超导量子比特和信道的耦合为电感耦合时，所述电流转换部采用四分之一波长共面波导传输线，实现共面波导阻抗转换的作用；当超导量子比特和信道之间为电容耦合时，所述电流转换部采用二分之一波长的共面波导传输线。
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