WO2024098977A1 - 一种太阳电池及其制备方法和电池组件 - Google Patents

一种太阳电池及其制备方法和电池组件 Download PDF

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Publication number
WO2024098977A1
WO2024098977A1 PCT/CN2023/120743 CN2023120743W WO2024098977A1 WO 2024098977 A1 WO2024098977 A1 WO 2024098977A1 CN 2023120743 W CN2023120743 W CN 2023120743W WO 2024098977 A1 WO2024098977 A1 WO 2024098977A1
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Prior art keywords
silicon wafer
solar cell
oxide layer
preparing
texturing
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PCT/CN2023/120743
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English (en)
French (fr)
Inventor
方明良
侯锟
刘宗刚
马列
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Tongwei Solar Meishan Co Ltd
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Tongwei Solar Meishan Co Ltd
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Priority to EP23855808.4A priority Critical patent/EP4391091A4/en
Priority to US18/714,992 priority patent/US20250048771A1/en
Priority to AU2023375286A priority patent/AU2023375286B2/en
Publication of WO2024098977A1 publication Critical patent/WO2024098977A1/zh
Anticipated expiration legal-status Critical
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/70—Surface textures, e.g. pyramid structures
    • H10F77/703—Surface textures, e.g. pyramid structures of the semiconductor bodies, e.g. textured active layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H10F71/121—The active layers comprising only Group IV materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F10/00—Individual photovoltaic cells, e.g. solar cells
    • H10F10/10—Individual photovoltaic cells, e.g. solar cells having potential barriers
    • H10F10/16—Photovoltaic cells having only PN heterojunction potential barriers
    • H10F10/164—Photovoltaic cells having only PN heterojunction potential barriers comprising heterojunctions with Group IV materials, e.g. ITO/Si or GaAs/SiGe photovoltaic cells
    • H10F10/165—Photovoltaic cells having only PN heterojunction potential barriers comprising heterojunctions with Group IV materials, e.g. ITO/Si or GaAs/SiGe photovoltaic cells the heterojunctions being Group IV-IV heterojunctions, e.g. Si/Ge, SiGe/Si or Si/SiC photovoltaic cells
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H10F71/128—Annealing
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Definitions

  • the present application relates to the technical field of solar cells, and in particular to a solar cell and a preparation method thereof and a cell assembly.
  • the current mainstream preparation processes include: silicon wafer-texturing-boron diffusion-back etching-tunneling oxidation-in-situ doping of amorphous silicon-de-coating-front aluminum oxide-front silicon nitride-back silicon nitride-printing and sintering-testing and sorting.
  • the inventors have found that the TOPCon cells prepared by the existing preparation process often appear black during EL testing. In addition, the prepared TOPCon cells are prone to blackening and low efficiency.
  • the present application provides a solar cell and a method for preparing the same, and a solar cell assembly.
  • the invention can partially or completely improve or even solve the problem of solar cell blackening in the related technology.
  • an example of the present application provides a method for preparing a solar cell, the method comprising a texturing process and a boron or phosphorus diffusion process performed in sequence; between the texturing process and the boron or phosphorus diffusion process, the method further comprises:
  • the silicon wafer after wet texturing by using a flower basket is heated to form a first oxide layer on both the front and back sides of the silicon wafer to absorb impurities of the silicon wafer; and the first oxide layer on the front and back sides of the silicon wafer is removed;
  • the thickness of the first oxide layer is 4 nm to 5 nm.
  • the silicon wafer is heated to form a first oxide layer on the front and back of the silicon wafer to adsorb organic matter and impurities attached to the surface of the silicon wafer; then the first oxide layer with adsorbed impurities is removed to improve the cleanliness of the silicon wafer surface, so as to further improve the diffusion uniformity of the subsequent boron diffusion process or phosphorus diffusion process and improve the quality and efficiency of solar cells. If the subsequent boron diffusion or phosphorus diffusion process is directly performed on the cell after texturization, these defects will be multiplied at the contact point between the silicon wafer and the wet basket teeth after the boron diffusion process. Under the EL test, serious blackening defects occur at this position, affecting the yield and efficiency of the solar cell.
  • the silicon wafer is an n-type single crystal silicon wafer;
  • the solar cell includes a stacked passivation/anti-reflection film, a passivation layer, a p-type emitter, an n-type single crystal silicon wafer substrate, a tunneling oxide layer, an n-type polycrystalline silicon thin film and an anti-reflection film.
  • the boron diffusion process of N-TOPCon cells needs to be carried out at a relatively large opening voltage and a relatively high temperature. For example, when the opening voltage is above 700mV and the boron diffusion process temperature rises to 1000°C, N-TOPCon cells are more sensitive to the influence of impurity contamination, and the blackening phenomenon is more obvious during EL testing. Therefore, the above method The improvement effect of the method on N-TOPCon cells is more significant.
  • the n-type single crystal silicon wafer after wet texturing is heated to form a first oxide layer to absorb impurities, and the boron diffusion process is performed after removing the first oxide layer on both sides of the silicon wafer, which can improve the quality and efficiency of the prepared N-TOPCon cells.
  • the heating method includes: heating the texturized silicon wafer to a first preset temperature and keeping it warm for a first preset time; the first preset temperature is 600°C to 800°C, and the first preset time is 30s to 60s.
  • the first preset temperature is 700°C to 800°C.
  • the silicon wafer after wet texturing is heated to a first preset temperature of 600°C ⁇ 800°C and kept warm for a first preset time of 30s ⁇ 60s.
  • This can ensure the formation of a first oxide layer to adsorb impurities on the surface of the silicon wafer, while avoiding the ineffective adsorption of impurities due to too low heating temperature or too short insulation time, and also avoiding the impurities adsorbed on the first oxide layer from diffusing into the interior of the silicon wafer due to too high heating temperature or too long insulation time, thereby affecting the quality and efficiency of the solar cell.
  • Heating the textured silicon wafer to 700°C ⁇ 800°C can further reduce impurities in the silicon wafer and improve the quality and efficiency of solar cells.
  • the method for removing the first oxide layer on the front and back sides of the silicon wafer includes: cleaning the silicon wafer with a cleaning agent for 30s to 50s; the cleaning agent includes HF;
  • the cleaning agent includes HF with a volume concentration of 15% to 30%.
  • the silicon wafer is heated to form a first oxide layer on the surface of the silicon wafer, so that impurities on the surface of the silicon wafer are adsorbed on the first oxide layer.
  • the silicon wafer is cleaned for 30s to 50s using a cleaning agent containing HF, which can remove the first oxide layer on the surface of the silicon wafer and the impurities adsorbed on the first oxide layer, thereby improving the subsequent boron diffusion or The quality and efficiency of solar cells obtained through processes such as phosphorus diffusion process.
  • the amount of HF used can be reduced while removing the first oxide layer and impurities, thereby reducing the preparation cost of the solar cell.
  • the cleaning agent further includes HCl
  • the cleaning agent further comprises HCl having a volume concentration of 5% to 10%;
  • the cleaning agent includes HF and HCl in a volume ratio of 3:1.
  • using HF and HCl in a suitable ratio can effectively remove the first oxide layer and impurities adsorbed on the first oxide layer, and can also reduce the amount of HF and HCl, avoid HF and HCl affecting the silicon wafer (such as over-corrosion and damage to the velvet surface), and reduce the preparation cost of solar cells.
  • a second oxide layer is formed on the surface of the silicon wafer, and a boron or phosphorus diffusion process is performed on the silicon wafer with the second oxide layer formed on the surface;
  • the method for forming the second oxide layer includes: purging the silicon wafer with ozone.
  • the second oxide layer is re-formed on the silicon wafer surface after the first oxide layer is removed by a cleaning agent, so that a protective layer can be formed on the silicon wafer surface, which can further reduce impurity contamination and make the subsequent boron diffusion or phosphorus diffusion process more uniform.
  • an example of the present application provides a solar cell, which is manufactured according to the method for manufacturing a solar cell provided in the first aspect.
  • the silicon wafer after wet texturing is heated to form an oxide layer, which can adsorb impurities generated on the silicon wafer due to tooling methods such as flower baskets during the texturing process, and remove the oxide layer adsorbed with impurities using cleaning agents and the like, so that the solar cells subsequently prepared through processes such as boron diffusion or phosphorus diffusion have better quality and conversion efficiency.
  • the solar cell in combination with the second aspect, in a first possible implementation of the second aspect, includes a stacked passivation/anti-reflection film, a passivation layer, a p-type emitter, an n-type silicon wafer substrate, a tunneling oxide layer, an n-type polysilicon thin film and an anti-reflection film; the solar cell is a quadrilateral thin plate structure, having a first side for contacting the flower basket during the texturing process and a second side that does not contact the flower basket; the first side and the second side have the same degree of blackening during the EL test.
  • the second side of the N-TOPCon that does not contact the flower basket during the texturing process usually does not turn black during the EL test; whereas the first side of the existing N-TOPCon that contacts the flower basket during the texturing process usually shows a flower basket mark and turns black during the EL test.
  • the N-TOPCon provided in this example is used to have the same degree of blackening during the EL test for the first side in contact with the flower basket and the second side that does not contact the flower basket, that is, the blackening of the flower basket mark will not appear at any position of the first side, which can effectively remove the wet flower basket mark and improve the quality and conversion efficiency of the N-TOPCon battery.
  • an example of the present application provides a battery assembly comprising a plurality of solar cells provided in the second aspect.
  • the solar cell provided by the second aspect can avoid the generation of wet basket marks and has high quality and conversion efficiency. Therefore, the battery assembly including multiple solar cells provided by the second aspect has good conversion efficiency.
  • FIG1 is a schematic cross-sectional view of a silicon wafer after wet texturing in the prior art
  • FIG2 is a schematic cross-sectional view of a silicon wafer having a first oxide layer formed thereon in the present application
  • FIG3 is a schematic cross-sectional view of a silicon wafer after the first oxide layer is removed according to the present invention.
  • FIG4 is a flow chart of the preparation process of a TOPCon battery provided by an example of this application.
  • FIG5 is an EL test diagram of the TOPCon battery provided in Example 1 of the present application.
  • FIG6 is an EL test diagram of the TOPCon battery provided in Example 2 of the present application.
  • FIG7 is an EL test diagram of the TOPCon battery provided in Comparative Example 1 of the present application.
  • FIG8 is an EL test diagram of the TOPCon battery provided in Comparative Example 2 of the present application.
  • Icon 10-textured silicon wafer; 20-impurities; 30-first oxide layer.
  • the current mainstream preparation processes include: N-type silicon wafers, texturing, boron diffusion, back etching, tunneling oxidation, in-situ doping of amorphous silicon, de-coating, front aluminum oxide, front silicon nitride, back silicon nitride, printing and sintering, testing and sorting.
  • the inventor analyzed the cause of the blackening phenomenon and believed that: in the research and development and production of N-type high-efficiency TOPCon batteries, during wet texturing, the silicon wafers are loaded into a flower basket, and the flower basket and the silicon wafers are immersed in the texturing tank together. At the contact position between the texturing silicon wafer 10 and the flower basket teeth, there will be slight residues of additive organic matter and alkali crystals. The intention is shown in Figure 1. During the subsequent boron diffusion high temperature process, the defect was magnified, causing the location where the silicon wafer and the turnbuckle contacted to appear black abnormally during the EL test.
  • the inventor provides a method for preparing a TOPCon cell, including: an oxidation removal and cleaning process performed between a wet texturing process and a boron diffusion or phosphorus diffusion process.
  • the oxidation removal and cleaning process includes: heating a silicon wafer that has been wet texturing using a flower basket loading method, forming a first oxide layer on both the front and back sides of the silicon wafer to absorb impurities on the silicon wafer; and removing the first oxide layer on the front and back sides of the silicon wafer.
  • the texturing silicon wafer 10 is heated to form a first oxide layer 30 on the surface of the texturing silicon wafer 10 to adsorb impurities 20 such as organic matter and alkali crystals attached to the surface of the texturing silicon wafer 10.
  • impurities 20 such as organic matter and alkali crystals attached to the surface of the texturing silicon wafer 10.
  • FIG2 A cross-sectional schematic diagram of the first oxide layer 30 formed on the surface of the texturing silicon wafer 10 after wet texturing is shown in FIG2 (for the sake of clarity, the impurities 20 are drawn on the upper surface of the first oxide layer 30, which does not mean that the impurities 20 are located on the surface of the first oxide layer 30.
  • the impurities 20 can also be located inside the first oxide layer 30).
  • the first oxide layer 30 with the impurities 20 adsorbed thereon is removed, which can improve the cleanliness of the surface of the texturing silicon wafer 10, so as to further improve the uniformity of the subsequent boron diffusion or phosphorus diffusion process, avoid the wet basket print of the TOPCon cell, and improve the quality and efficiency of the TOPCon cell. If the impurities 20 are not eliminated or improved, after the boron diffusion process, these defects at the contact part of the wet basket teeth of the silicon wafer will be magnified exponentially, resulting in serious blackening defects at this position under the EL test, which seriously affects the yield and efficiency of the TOPCon cell.
  • the cross-sectional schematic diagram of the silicon wafer with the first oxide layer 30 adsorbed thereon 20 removed is shown in FIG3.
  • this example provides a method for preparing an N-TOPCon battery, including:
  • the front and back sides of the silicon wafer are texturized to form a velvet surface on the surface of the silicon wafer to increase the reflectivity of light and remove some impurities in the silicon substrate.
  • the silicon wafers can be loaded into a basket, and the basket loaded with the silicon wafers can be immersed in a texturing tank containing a texturing agent such as KOH liquid.
  • the texturing agent in the texturing tank can be KOH with a volume concentration of 1% to 20%, and the temperature condition of the texturing step can be 40°C to 80°C.
  • the silicon wafers after texturing are acid-washed, washed with water, slowly pulled, and dried at a temperature of 80°C to 100°C.
  • the acid-washing can use HF with a volume concentration of 1% to 30%.
  • the textured silicon wafer 10 that has been wet textured using a basket loading method is heated to form a first oxide layer 30 to absorb impurities 20 on the surface of the textured silicon wafer 10; and the first oxide layer 30 on the front and back sides of the textured silicon wafer 10 is removed.
  • the N-TOPCon battery cell has a first side for contacting the flower basket and a second side that is not in contact with the flower basket.
  • Some impurities 20 such as additives and alkali crystal residues may remain on the first side in contact with the flower basket, forming defects at the first side. If these defects are not improved, these defects will be amplified in the subsequent boron expansion process, resulting in the first side in contact with the flower basket to appear abnormally black during the EL test, affecting the quality and efficiency of the N-TOPCon battery.
  • the silicon wafer 10 for texturing is heated to form a first oxide layer 30 on the surface of the silicon wafer 10 for texturing, which can adsorb impurities 20 such as organic matter and alkali crystals attached to the surface of the silicon wafer 10 for texturing. Then, the first oxide layer 30 adsorbing the impurities 20 can be removed to obtain a The cleanliness of the surface of the textured silicon wafer 10 is improved to further improve the diffusion uniformity of the subsequent boron diffusion or phosphorus diffusion process, thereby improving the quality and efficiency of the N-TOPCon battery.
  • the present application does not limit how to heat the textured silicon wafer 10 to form the first oxide layer 30.
  • the textured silicon wafer 10 is heated to a first preset temperature of 600° C. to 800° C. and kept at the temperature for a first preset time of 30s to 60s.
  • the first preset temperature includes, but is not limited to, one of 600° C., 650° C., 700° C., 750° C., and 800° C., or a range between any two of the above.
  • the first preset time includes but is not limited to a range between one or any two of 30s, 35s, 40s, 50s and 60s.
  • Heating the texturing silicon wafer 10 to a first preset temperature of 600°C to 800°C and keeping it warm for a first preset time of 30s to 60s can ensure the formation of a first oxide layer 30 to adsorb impurities 20 on the surface of the texturing silicon wafer 10. At the same time, it can avoid the impurities 20 being effectively adsorbed due to too low a heating temperature or too short a holding time, and it can also avoid the impurities 20 adsorbed on the first oxide layer 30 diffusing into the interior of the texturing silicon wafer 10 due to too high a heating temperature or too long a holding time, thereby affecting the quality and efficiency of the N-TOPCon battery.
  • a step-beam heating furnace can be used to heat the texturing silicon wafer 10.
  • the heating time of the texturing silicon wafer 10 is controlled and the error of the oxidation treatment process is reduced.
  • the present application does not limit the specific heating time and heating temperature, and relevant personnel can make corresponding adjustments as needed while ensuring that the first oxide layer 30 can be formed on the surface of the texturing silicon wafer 10.
  • the texturing silicon wafer 10 may be placed in a pure oxygen environment or a high pressure or low pressure environment for heating. Since the oxidation rate and the diffusion rate of impurities in a pure oxygen or low pressure or high pressure environment may change, relevant personnel may appropriately lower or increase the first preset temperature, and Prolong or shorten the insulation time appropriately.
  • the present application does not limit how to remove the first oxide layer 30 on which impurities 20 are adsorbed on the surface of the texturing silicon wafer 10, and relevant personnel may make corresponding adjustments as needed.
  • a cleaning agent including HF may be used to clean the textured silicon wafer 10 having the first oxide layer 30 formed on the surface thereof.
  • Cleaning the surface of the textured silicon wafer 10 with a cleaning agent including HF can not only effectively remove the first oxide layer 30 and the impurities 20 , but also perform surface modification on the textured surface of the textured silicon wafer 10 and perform passivation treatment on the textured silicon wafer 10 .
  • the cleaning agent further includes HCL.
  • the cleaning agent includes HF with a volume concentration of 15% to 30% and HCl with a volume concentration of 5% to 10%.
  • the cleaning agent includes HF with a volume concentration of 15% to 30% and HCl with a volume concentration of 5% to 10% in a volume ratio of 3:1.
  • the present application does not limit the specific cleaning time.
  • a cleaning agent including 15% to 30% HF and 5% to 10% HCl in a volume ratio of 3:1 is used to clean the textured silicon wafer 10, and the cleaning time is 30s to 50s.
  • the cleaning time includes but is not limited to one of 30s, 35s, 40s, 50s and 60s or a range between any two of them.
  • a second oxide layer thin layer can be formed on the surface of the textured silicon wafer 10 after removing the first oxide layer 30, and surface modification and passivation treatment can be performed to make the subsequent boron diffusion treatment process more uniform.
  • a second oxide layer may be formed on the surface of the silicon wafer by means of ozone purging, or by passivation treatment with nitric acid to form the second oxide layer.
  • step S3 post-processing the textured silicon wafer 10 obtained in step S2 to obtain an N-TOPCOn battery.
  • S3 can adopt the conventional N-TOPCOn battery preparation process.
  • the N-TOPCon battery manufacturing process of the example in this application does not change the original N-TOPCon battery manufacturing steps.
  • An oxidation cleaning step is performed between the texturing and boron diffusion processes.
  • the basket print produced during wet texturing can be removed, the uniformity of subsequent boron diffusion is improved, and the quality of the prepared N-TOPCon battery is improved.
  • any post-processing step for the silicon wafer after oxidation cleaning in step S2 is feasible as long as it can achieve the production of N-TOPCon batteries, and the present application does not make any specific restrictions thereon.
  • the textured silicon wafer 10 after oxidation and impurity removal is subjected to a boron expansion process to form a pn junction.
  • the step of performing boron expansion on the textured silicon wafer 10 may include placing the textured silicon wafer 10 in a boron expansion tube, introducing a boron source at a temperature of 700°C to 900°C for 20s to 1000s, and then pushing the junction at a temperature of 900°C to 1200°C for 100s to 5000s.
  • etching is performed on the silicon wafer after the boron diffusion process.
  • the etching method may include: placing the silicon wafer after the boron diffusion process in an etching tank containing etchants such as HNO 3 and HF.
  • the etched silicon wafer is subjected to tunnel oxidation, and the tunnel oxidation step includes: heating the etched silicon wafer to 600° C. for oxidation to form a tunnel oxidation layer on the back of the silicon wafer.
  • the silicon wafer after the tunnel oxidation is doped with amorphous silicon.
  • the step of doping amorphous silicon includes: at a process temperature of 400° C., the gas introduced is a mixed gas of PH 3 and SiH 4 , and the silicon wafer obtained after the tunnel oxidation step is in-situ doped with amorphous silicon.
  • the silicon wafer doped with amorphous silicon is annealed, and the annealing step includes: placing the silicon wafer at 800° C. for constant temperature annealing for about 60 minutes, so that the doped amorphous silicon is converted into phosphorus-doped polysilicon.
  • the annealed silicon wafer is de-coated.
  • the de-coating step includes: growing silicon oxide on the back of the annealed silicon wafer, washing the de-coated area on the front with HF to remove the silicon oxide, and then placing it in an alkaline polishing tank. (The volume concentration of KOH is 1% to 20%, the temperature is 40°C to 90°C, and the amount of alkali polishing additive is 2L to 20L) alkali polishing is performed to remove the front polysilicon winding.
  • the silicon wafer after de-coating is subjected to front-side aluminum oxide deposition, front-side silicon nitride deposition, and back-side silicon nitride deposition.
  • the step of depositing the front-side aluminum oxide comprises: depositing the front-side aluminum oxide by thermal atomic deposition (ALD) at a process temperature of 200° C. to 250° C.
  • the step of depositing the front-side silicon nitride and back-side silicon nitride deposition comprises: depositing the front-side and back-side silicon nitride films by plasma chemical vapor deposition, and introducing NH 3 and SiH 4 gases during the deposition.
  • the silicon wafer on which the front and back silicon nitride films are deposited is subjected to screen printing and sintering.
  • the present application example provides a method for preparing a P-TOPCon battery, including: texturing: wet alkaline texturing; oxidation cleaning: heating the texturized silicon wafer 10 to form a first oxide layer 30, and using a cleaning agent to remove the first oxide layer 30 adsorbed with impurities 20; phosphorus diffusion: phosphorus doping; etching: back polishing and removal of edge P-N junction; front/back film: plating front/back passivation anti-reflection film; screen printing: subjecting the back silver paste, aluminum paste and front silver paste to a screen printing process, and then drying and sintering to form a contact electrode.
  • the examples of the present application also provide a TOPCon battery prepared by the above-mentioned preparation method.
  • the examples of the present application provide an N-TOPCon battery manufactured by the manufacturing method as described in FIG. 4 .
  • the N-TOPCon battery is a quadrilateral thin plate structure, having a first side for contacting the flower basket during the texturing process and a second side that does not contact the flower basket.
  • the second side that does not contact the flower basket usually does not show blackening, while the second side that contacts the flower basket will show flower basket marks, so the degree of blackening of the two is quite different, that is, the second side is almost not blackened, while the first side shows obvious abnormal blackening.
  • neither the first side nor the second side will show blackening during the EL test, which can avoid the generation of flower basket marks.
  • the example of the present application also provides a battery assembly, which includes a plurality of N-TOPCon batteries as described above.
  • This application does not limit the specific configuration of the battery assembly, and relevant personnel can make corresponding adjustments as needed.
  • the battery assembly includes a plurality of N-TOPCon batteries, and the plurality of N-TOPCon batteries may be connected in series.
  • the photovoltaic cell module includes 64 or 72 N-TOPCon cells.
  • the battery assembly further includes a photovoltaic glass layer.
  • the photovoltaic glass layer covers the upper surface of the N-TOPCon battery to protect the N-TOPCon battery.
  • the photovoltaic glass in the photovoltaic glass layer is also called photoelectric glass, which is a tempered low-iron glass with very good light transmittance and high hardness. It can adapt to large temperature differences between day and night and severe weather conditions, thereby protecting the N-TOPCon battery.
  • the battery assembly further includes a photovoltaic backsheet.
  • the photovoltaic backsheet has good insulation, waterproofness and aging resistance.
  • the photovoltaic backsheet is arranged on the back of the N-TOPCon battery to further protect the N-TOPCon battery.
  • the photovoltaic backsheet can also be made of tempered glass.
  • the battery assembly further includes an EVA film layer with good light transmittance.
  • N-TOPCon cells are very fragile, and the photovoltaic glass layer cannot be directly attached to the upper surface of the N-TOPCon cells, requiring the EVA film to play a bonding role in the middle.
  • the battery assembly may also be provided with a frame, and multiple N-TOPCon batteries may be installed in the frame to support and protect the battery assembly.
  • N-TOPCon battery provided by the example of this application is described in detail below in conjunction with the embodiments.
  • Example 1 of the present application provides an N-TOPCon battery, which is prepared by the following method:
  • the silicon wafer is sequentially subjected to the following processes: texturing + oxidation cleaning + boron diffusion + alkali polishing + poly + annealing + RCA + front and back silicon nitride plating + screen printing.
  • the texturing conditions are: 20% KOH volume concentration, texturing temperature is 40°C; oxidation cleaning conditions are: heating the silicon wafer after texturing to 600°C, keeping warm for 60S; preparing cleaning agent with volume concentration of 15% HF and volume concentration of 5% HCL hydrochloric acid in a volume ratio of 3:1, cleaning for 50S; boron expansion conditions are: placing the silicon wafer after oxidation cleaning in a boron expansion tube, passing the boron source at a temperature of 700°C for 500S, and then pushing at a temperature of 1000°C for 1000S; alkali polishing conditions are: placing the above silicon wafer in an alkali polishing tank (volume concentration of 10% KOH, temperature of 40°C, and the amount of alkali polishing additive is 10L); poly conditions are: the gases passed are PH 3 and SiH 4 mixed gas, the process temperature is 600°C; the annealing condition is: constant temperature annealing at 850°C for 60min; the RCA condition is: HF with
  • Embodiment 2 of the present application provides an N-TOPCon battery, which differs from Embodiment 1 in that, in its preparation method, the texturized silicon wafer is heated to 800° C. and kept warm for 30 seconds.
  • Comparative Example 1 of the present application provides an N-TOPCon battery, which is different from Example 1 in that its preparation method is sequentially performed by texturing + boron diffusion + alkali polishing + poly + annealing + RCA + front and back silicon nitride plating + screen printing.
  • the specific conditions of each process are the same as those of Example 1.
  • Comparative Example 2 of the present application provides an N-TOPCon battery, which differs from Example 1 in that during oxidation cleaning, the texturized silicon wafer is heated to 400° C.
  • Comparative Example 3 of the present application provides an N-TOPCon battery, which differs from Example 1 in that during oxidation cleaning, the texturized silicon wafer is heated to 1000° C.
  • N-TOPCon cells provided in Examples 1 and 2 and Comparative Examples 1 and 2 were subjected to EL tests to observe their blackening phenomenon.
  • Example 1 The test results of Example 1 are shown in FIG. 5 , the test results of Example 2 are shown in FIG. 6 , the test results of Comparative Example 1 are shown in FIG. 7 , and the test results of Comparative Example 2 are shown in FIG. 8 .
  • Results analysis shows that according to the comparison chart between Examples 1 and 2 and Comparative Example 1, the N-TOPCon batteries provided in Examples 1 and 2 of the present application did not show any blackening phenomenon during the EL test, and can avoid the generation of basket prints; the N-TOPCon battery provided in Comparative Example 1 has obvious basket prints.

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Abstract

一种太阳电池及其制备方法和电池组件，属于太阳能电池技术领域。太阳电池的制备方法包括：在湿法制绒工序和硼/磷扩工序之间进行的氧化除杂和清洗工序。氧化除杂和清洗工序包括：对利用花篮装载进行湿法制绒后的硅片进行加热，形成第一氧化层以吸附硅片的杂质；去除硅片正面和背面的第一氧化层。

Description

一种太阳电池及其制备方法和电池组件
本申请要求于2022年11月09日提交中国专利局、申请号为2022113997624、发明名称为“一种太阳电池及其制备方法和电池组件”的中国专利申请的优先权，其全部内容通过引用结合在本申请中。
技术领域
本申请涉及太阳能电池技术领域，具体而言，涉及一种太阳电池及其制备方法和电池组件。
背景技术
当前市场上，TOPCon电池大多数是以P型的单晶硅为主。然而，P型TOPCon电池的光电转换效率难以达到23.5％以上，目前行业内效率已接近极限。以N型硅为基底的电池片拥有的转换效率更高，研发生产N型高效电池是提高光电转换效率的有效途径。
对于N-TOPCon电池，目前的主流制备工艺包括：硅片‐制绒‐硼扩散‐背面刻蚀‐隧穿氧化‐原位掺杂非晶硅‐去绕镀‐正面氧化铝‐正面氮化硅‐背面氮化硅‐印刷烧结‐测试分选。
然而，发明人发现，利用现有的制备工艺制备获得的TOPCon电池，在EL测试时，往往会出现发黑现象。并且，制备获得的TOPCon电池容易出现发黑不良及效率低的问题。
发明内容
基于上述的不足，本申请提供了一种太阳电池及其制备方法和电池组件， 以部分或全部地改善、甚至解决相关技术中太阳电池发黑不良的问题。
本申请是这样实现的：
在第一方面，本申请的示例提供了一种太阳电池的制备方法，制备方法包括依次进行的制绒工序和硼或磷扩散工序；在制绒工序和硼或磷扩散工序之间，制备方法还包括：
对利用花篮装载进行湿法制绒后的硅片进行加热，在硅片的正面和背面均形成第一氧化层以吸附硅片的杂质；去除硅片的正面和背面的第一氧化层；
可选的，第一氧化层的厚度为4nm～5nm。
在上述实现过程中，利用花篮装载进行湿法制绒后的硅片，花篮齿位与硅片的接触部位不可避免存在添加剂和碱结晶残留等杂质，在硅片与花篮的接触位置会形成缺陷。在利用花篮装载硅片进行湿法制绒后，对硅片进行加热，在硅片的正面和背面形成第一氧化层，以对硅片表面附着的有机物和杂质进行吸附处理；然后去除吸附有杂质的第一氧化层，提升硅片表面的洁净度，以进一步提高后续硼扩工艺或磷扩工艺的扩散均匀性，提高太阳电池的质量和效率。若直接对制绒后的电池片进行后续硼扩或磷扩工艺，这些缺陷在硼扩工艺后，硅片与湿法花篮齿的接触部位的缺陷会被成倍放大。在EL测试下，该位置处出现严重的发黑不良，影响太阳电池的良率和效率。
结合第一方面，在本申请第一方面的第一种可能的实施方式中，硅片为n型单晶硅片；太阳电池包括叠层设置的钝化/减反射膜、钝化层、p型发射极、n型单晶硅片基底、隧穿氧化层、n型多晶硅薄膜和减反射膜。
N-TOPCon电池的硼扩工艺需要在较大的开压以及较高的温度下进行，例如：开压在700mV以上，硼扩工艺温度上升到1000℃，N-TOPCon电池受杂质污染的影响更为敏感，进一步的在EL测试时的发黑现象更加明显，所以上述方 法对N-TOPCon电池的改善效果更显著。在上述实现过程中，在N-TOPCon电池的制备工艺中，对湿法制绒后的n型单晶硅片进行加热，形成第一氧化层以吸附杂质，并在去除硅片两面第一氧化层以后再进行硼扩工艺，能够提高制备获得的N-TOPCon电池的质量和效率。
结合第一方面，在本申请第一方面的第二种可能的实施方式中，进行加热的方法包括：将制绒后的硅片升温至第一预设温度，保温第一预设时间；第一预设温度为600℃～800℃，第一预设时间为30s～60s。
结合第一方面，在本申请第一方面的第三种可能的实施方式中，第一预设温度为700℃～800℃。
在上述实现过程中，将湿法制绒后的硅片升温至600℃～800℃的一第预设温度下，保温30s～60s的第一预设时间，能够在保证形成第一氧化层以对硅片表面的杂质进行吸附的同时，不但能避免由于加热温度过低或保温时间过短而不能有效吸附杂质，还能避免由于加热温度过高或保温时间过长而导致吸附于第一氧化层的杂质扩散进入硅片的内部，影响太阳电池的质量和效率。
将制绒后的硅片加热至700℃～800℃，能够进一步减小硅片处的杂质，提高太阳电池的质量和效率。
结合第一方面，在本申请第一方面的第四种可能的实施方式中，去除硅片正面和背面的第一氧化层的方法包括：利用清洗剂清洗硅片，清洗时间为30s～50s；清洗剂包括HF；
可选的，清洗剂包括体积浓度为15％～30％的HF。
加热硅片，在硅片表面形成第一氧化层，以将硅片表面的杂质吸附于第一氧化层。在上述实现过程中，利用含有HF的清洗剂清洗硅片30s～50s，能够去除硅片表面的第一氧化层及吸附于第一氧化层的杂质，以提高后续通过硼扩或 磷扩工艺等工艺获得的太阳电池的质量和效率。
利用体积浓度为15％～30％的HF，能够在去除第一氧化层及杂质的情况下，减小HF的用量，减小太阳电池的制备成本。
结合第一方面，在本申请第一方面的第五种可能的实施方式中，清洗剂还包括HCl；
可选的，清洗剂还包括体积浓度为5％～10％的HCl；
可选的，清洗剂包括体积比为3:1的HF和HCl。
在上述实现过程中，利用适宜配比的HF和HCl，能够有效去除第一氧化层及吸附于第一氧化层杂质，还能减小HF和HF和HCl的用量，避免HF和HCl影响硅片(例如过腐蚀破坏绒面)，减小太阳电池的制备成本。
结合第一方面，在本申请第一方面的第六种可能的实施方式中，在利用清洗剂清洗所述硅片后，在硅片表面形成第二氧化层，对表面形成有第二氧化层的硅片进行硼或磷扩散工序；
可选的，形成第二氧化层的方法包括：利用臭氧吹扫硅片。
在上述实现过程中，在利用清洗剂去除第一氧化层的硅片表面重新形成第二氧化层，能够在硅片表面形成一层保护层，可以进一步减少杂质污染，使后续的硼扩或磷扩工艺更加均匀。
在第二方面，本申请的示例提供一种太阳电池，根据第一方面提供的太阳电池的制备方法制得。
在上述实现过程中，在太阳电池的制备工艺中，将湿法制绒后的硅片加热，形成氧化层，能够将制绒工艺时由于花篮等工装方式而在硅片处产生的杂质进行吸附，并利用清洗剂等方式去除吸附有杂质的氧化层，使得后续通过硼扩或磷扩等工艺制备获得的太阳电池具有较好的质量和转换效率。
结合第二方面，在第二方面的第一种可能的实施方式中，太阳电池电池包括叠层设置的钝化/减反射膜、钝化层、p型发射极、n型硅片基底、隧穿氧化层、n型多晶硅薄膜和减反射膜；太阳电池为四边形薄板结构，具有在制绒工艺时用于与花篮接触的第一边和不与花篮接触的第二边；第一边和第二边在EL测试时的发黑程度一致。
N-TOPCon在制绒工艺时不与花篮接触的第二边，通常在EL测试不会出现发黑现象；而现有的N-TOPCon在制绒工艺时与花篮接触的第一边，通常在EL测试时出现花篮印，出现发黑现象。在上述实现过程中，本示例提供的N-TOPCon，用于与花篮接触的第一边与不与花篮接触的第二边在EL测试时的发黑程度一致，即第一边的各个位置处均不会出现花篮印的发黑现象，能够有效去除湿法花篮印，提高N-TOPCon电池的质量和转换效率。
在第三方面，本申请的示例提供了一种电池组件，包括多片第二方面提供的太阳电池。
在上述实现过程中，第二方面提供的太阳电池，能够避免湿法花篮印的产生，具有较高的质量和转换效率。因此，包含有多片第二方面提供的太阳电池的电池组件，具有良好的转换效率。
附图说明
为了更清楚地说明本申请实施例或现有技术中的技术方案，以下将对实施例或现有技术描述中所需要使用的附图作简单地介绍。
图1为现有技术湿法制绒后硅片的截面示意图；
图2为本申请形成有第一氧化层的硅片的截面示意图；
图3为本申请去除第一氧化层后硅片的截面示意图；
图4为本申请示例提供的TOPCon电池的制备工艺流程图；
图5为本申请实施例1提供的TOPCon电池的EL测试图；
图6为本申请实施例2提供的TOPCon电池的EL测试图；
图7为本申请对比例1提供的TOPCon电池的EL测试图；
图8为本申请对比例2提供的TOPCon电池的EL测试图。
图标：10-制绒硅片；20-杂质；30-第一氧化层。
具体实施方式
下面将结合实施例对本申请的实施方案进行详细描述，但是本领域技术人员将会理解，下列实施例仅用于说明本申请，而不应视为限制本申请的范围。实施例中未注明具体条件者，按照常规条件或制造商建议的条件进行。所用试剂或仪器未注明生产厂商者，均为可以通过市售购买获得的常规产品。
以下针对本申请示例提供的TOPCon电池及其制备方法和电池组件进行具体说明：
对于N-TOPCon电池，目前的主流制备工艺包括：N型硅片‐制绒‐硼扩散‐背面刻蚀‐隧穿氧化‐原位掺杂非晶硅‐去绕镀‐正面氧化铝‐正面氮化硅‐背面氮化硅‐印刷烧结‐测试分选。
然而，发明人发现，利用现有的制备工艺制备获得的TOPCon电池，在EL测试时，往往会出现发黑现象。
发明人分析出现发黑现象的原因，认为：在N型高效TOPCon电池的研发生产中，在湿法制绒时，会将硅片装载在花篮内，将花篮和硅片一起浸泡于制绒槽内。在制绒硅片10和花篮齿的接触位置，会存在添加剂有机物和碱类结晶的轻微残留。制绒硅片10表面残留的添加剂有机物和碱类结晶等杂质20的示 意图如图1所示。在后续硼扩高温工艺过程中，该缺陷被放大，导致硅片与花篮齿接触的位置，在EL测试时出现发黑异常。
发明人认为，在TOPCon电池的制备工艺中，制绒时存在的花篮印，会降低后续硼扩或磷扩工艺的均匀性，进而降低TOPCon电池的良率和效率。
基于此，发明人提供了TOPCon电池的制备方法，包括：在湿法制绒工序和硼扩或磷扩工序之间进行的氧化除杂和清洗工序。氧化除杂和清洗工序包括：对利用花篮装载进行湿法制绒后的硅片进行加热，在硅片的正面和背面均形成第一氧化层以吸附硅片的杂质；去除硅片正面和背面的第一氧化层。
在利用花篮装载硅片进行湿法制绒后，对制绒硅片10进行加热，在制绒硅片10的表面形成第一氧化层30，以对制绒硅片10表面附着的有机物和碱类结晶等杂质20进行吸附处理。在湿法制绒后的制绒硅片10表面形成第一氧化层30的截面示意图如图2所示(图中为了清楚展示，将杂质20绘制于第一氧化层30的上表面，并不表示杂质20位于第一氧化层30的表面。杂质20还可以位于第一氧化层30的内部)。
然后去除吸附有杂质20的第一氧化层30，可以提升制绒硅片10表面的洁净度，以进一步提高后续硼扩或磷扩工艺的均匀性，避免TOPCon电池出现湿法花篮印，提高TOPCon电池的质量和效率。若不消除或改善这杂质20，在硼扩工艺后，硅片湿法花篮齿的接触部位的这些缺陷会被成倍放大，导致在EL测试下，该位置处出现严重发黑不良，严重影响TOPCon电池的良率和效率。去除吸附有杂质20的第一氧化层30的硅片的截面示意图如图3所示。
以下结合附图对本申请示例提供的TOPCon电池的制备方法作进一步的详细描述。
请参阅图4，本示例提供一种N-TOPCon电池的制备方法，包括：
S1、制绒
对硅片的正面和背面进行制绒，使硅片表面形成绒面，以增加光的反射率，还可以去除硅基体的部分杂质。
在制绒时，可以将硅片装载于花篮中，将装载有硅片的花篮浸入盛放有例如KOH液体等制绒剂的制绒槽内。其中，制绒槽中的制绒剂可以为体积浓度为1％～20％的KOH，制绒步骤的温度条件可以为40℃～80℃。然后依次对制绒后的硅片进行酸洗、水洗、慢提拉、在80℃～100℃的温度下烘干。其中，酸洗可以采用体积浓度为1％～30％的HF。
S2、氧化清洗
对利用花篮装载进行湿法制绒后的制绒硅片10进行加热，形成第一氧化层30以吸附制绒硅片10表面的杂质20；去除制绒硅片10正面和背面的第一氧化层30。
在制绒工序中，利用花篮装载硅片，进行湿法制绒获得制绒硅片10后，制绒硅片10与花篮齿位的接触部位不可避免会存在一些添加剂和碱结晶残留等杂质20，在硅片用于与花篮接触的接触位置处会存在缺陷。例如，在四边形平板状的N-TOPCon电池中，N-TOPCon电池片具有用于与花篮接触的第一边和不与花篮接触的第二边。与花篮接触的第一边可能会残留一些添加剂和碱结晶残留等杂质20，在第一边处形成缺陷。若不改善这些缺陷，这些缺陷在后续硼扩工序中被放大，导致用于与花篮接触的第一边，在EL测试时出现发黑异常，影响N-TOPCon电池的质量和效率。
在利用花篮装载硅片进行湿法制绒后，对制绒硅片10进行加热，在制绒硅片10的表面形成第一氧化层30，可以对制绒硅片10表面附着的有机物和碱结晶等杂质20进行吸附处理。然后去除吸附有杂质20的第一氧化层30，可以提 升制绒硅片10表面的洁净度，以进一步提高后续硼扩或磷扩工艺的扩散均匀性，提高N-TOPCon电池的质量和效率。
本申请不限制如何对制绒硅片10进行加热以形成第一氧化层30。在一些可能的实施方式中，将制绒硅片10升温至600℃～800℃的第一预设温度下，保温30s～60s的第一预设时间。
示例性地，第一预设温度包括但不限于为600℃、650℃、700℃、750℃和800℃中的一者或任意两者之间的范围。
示例性地，第一预设时间包括但不限于为30s、35s、40s、50s和60s中的一者或任意两者之间的范围。
将制绒硅片10升温至600℃～800℃的第一预设温度下，保温30s～60s的第一预设时间，能够在保证形成第一氧化层30以对制绒硅片10表面的杂质20进行吸附的同时，不但能避免由于加热温度过低或保温时间过短而不能有效吸附杂质20，还能避免由于加热温度过高或保温时间过长而导致吸附于第一氧化层30的杂质20扩散进入制绒硅片10的内部，影响N-TOPCon电池的质量和效率。
为了便于提高制绒硅片10的氧化处理效率以及控制制绒硅片10的氧化吸杂质量，在一些可能的实施方式中，可以利用步进式加热炉进行制绒硅片10的加热。通过设置加热炉的长度和制绒硅片10在加热炉内的输送速度(滚轮传送)，控制制绒硅片10的加热时间，减小氧化处理工艺的误差。
本申请不限制具体的加热时间和加热温度，相关人员可以在保证能够在制绒硅片10表面形成第一氧化层30的情况下，根据需要进行相应的调整。
在一些可能的实施方式中，可以将制绒硅片10放置于纯氧环境或者高压或低压环境下，进行加热。由于在纯氧或者低压或高压环境下的氧化速率以及杂质的扩散速率会发生变化，相关人员可以适当降低或提高第一预设温度，以及 适当延长或缩短保温时间。
本申请不限制如何去除制绒硅片10表面吸附有杂质20的第一氧化层30，相关人员可以根据需要进行相应的调整。
在一些可能的实施方式中，可以利用包括HF的清洗剂清洗表面形成有第一氧化层30的制绒硅片10。
利用包括有HF的清洗剂清洗制绒硅片10的表面，不但能够有效去除第一氧化层30以及杂质20，还能够对制绒硅片10表面的绒面进行表面修饰，对制绒硅片10进行钝化处理。
本申请不限制清洗剂的具体组成，在一些可能的实施方式中，清洗剂还包括HCL。
示例性的，清洗剂包括体积浓度为15％～30％的HF和体积浓度为5％～10％的HCl。
进一步的，清洗剂包括体积比为3:1的体积浓度为15％～30％的HF和体积浓度为5％～10％的HCl。
本申请不限制具体的清洗时间，在一些可能的实施方式中，利用包括体积比为3:1的体积浓度15％～30％HF和体积浓度5％～10％HCl的清洗剂，清洗制绒硅片10，清洗时间为30s～50s。示例性的，清洗时间包括但不限于为30s、35s、40s、50s和60s中的一者或任意两者之间的范围。
为了进一步提高制得的N-TOPCOn电池的质量和效率，在一些可能的实施方式中，可以在去除第一氧化层30后的制绒硅片10表面，形成第二氧化层薄层，进行表面修饰和钝化处理，使得后续的硼扩处理工艺更加均匀。
进一步的，可以通过臭氧吹扫的方式，在硅片表面形成一层第二氧化层。或者，利用硝酸进行钝化处理，形成第二氧化层。
S3、对步骤S2得到的制绒硅片10进行后处理，制得N-TOPCOn电池。
S3可以采用常规的N-TOPCOn电池的制备工艺，本申请示例的N-TOPCon电池的制作工艺在不改变原有的N-TOPCon电池的制作步骤上，在制绒和硼扩工序之间进行了氧化清洗步骤，可以将湿法制绒时产生的花篮印去除，提高后续硼扩散的均匀性，提高制得的N-TOPCon电池的质量。
在本申请中，对步骤S2氧化清洗后的硅片，进行后处理的步骤只要能够实现制得N-TOPCon电池，都是可行的，本申请对其不做具体限定。
示例性的，对氧化除杂后的制绒硅片10进行硼扩工艺，形成pn结。对制绒硅片10进行硼扩的步骤可以包括：将制绒硅片10放置于硼扩管中，在700℃～900℃的温度下通入硼源，20s～1000s，然后在900℃～1200℃的温度下推结100s～5000s。
示例性的，对硼扩工艺的硅片进行刻蚀。刻蚀的方法可以包括：将硼扩后的硅片放置于盛放有HNO3和HF等刻蚀剂的刻蚀槽中。
示例性的，对刻蚀后的硅片进行隧穿氧化。隧穿氧化的步骤包括：将刻蚀后的硅片加热至600℃进行氧化，在硅片背面形成隧穿氧化层。
示例性的，对隧穿氧化后的硅片进行掺杂非晶硅。掺杂非晶硅的步骤包括：在400℃的工艺温度下，通入的气体为PH3和SiH4混合气体，对隧穿氧化步骤后得到的硅片进行原位掺杂非晶硅。
示例性的，对上述掺杂非晶硅后的硅片进行退火，退火的步骤包括：将硅片放置于在800℃下进行约60min的恒温退火，使得掺杂非晶硅变为掺磷多晶硅。
示例性的，对上述退火后的硅片进行去绕镀。去绕镀的步骤包括：在退火完的硅片背面生长氧化硅，正面绕镀区域用HF洗去氧化硅，然后放置于碱抛槽 (KOH体积浓度为1％～20％、温度为40℃～90℃、碱抛添加剂的用量为2L～20L)进行碱抛去掉正面多晶硅绕度。
示例性的，对上述去绕镀之后的硅片进行正面沉积氧化铝、沉积正面氮化硅和背面氮化硅。沉积正面氧化铝的步骤包括：采用热原子沉积(ALD)的方式沉积正面氧化铝，工艺温度为200℃～250℃。沉积正面氮化硅和背面氮化硅的步骤包括：采用等离子体化学气相沉积法沉积正面和背面氮化硅薄膜，沉积时通入NH3和SiH4气体。
示例性的，对上述沉积形成正面和背面氮化硅薄膜的硅片进行丝网印刷和烧结。
在一些可能的实施方式中，本申请示例提供一种P-TOPCon电池的制备方法，包括：制绒：湿法碱制绒；氧化清洗：将制绒硅片10加热形成第一氧化层30，利用清洗剂去除吸附有杂质20的第一氧化层30；磷扩散：进行磷掺杂；刻蚀：背面抛光和去除边缘P-N结；正/背膜：镀正面/背面钝化减反膜；丝网印刷：使背银浆料、铝浆及正银浆料，经过丝网印刷工艺，烘干烧结后形成接触电极。
本申请的示例还提供一种通过上述制备方法制备获得的TOPCon电池。
示例性的，本申请的示例提供一种通过如图4所述的制备方法制得的N-TOPCon电池。
该N-TOPCon电池为四边形薄板结构，具有在制绒工艺时用于与花篮接触的第一边和不与花篮接触的第二边。一般情况下，不与花篮接触的第二边通常不会表现出发黑现象，与花篮接触的第二边会出现花篮印，因此两者的发黑程度相差较大，即第二边几乎不发黑，第一边出现明显的异常发黑。而在本示例提供的N-TOPCon电池中，第一边和第二边在EL测试时均不会出现发黑现象，能够避免花篮印的产生。
本申请的示例还提供一种电池组件。该电池组件包括多片上述N-TOPCon电池。
本申请不限制电池组件的具体设置形式，相关人员可以根据需要进行相应的调整。
在一种可能的实施方式中，电池组件包括多片N-TOPCon电池，多片N-TOPCon电池可以通过串联的方式连接。
示例性地，光电池组件包括64片或72片N-TOPCon电池。
在一种可能的实施方式中，电池组件还包括光伏玻璃层。光伏玻璃层覆盖在N-TOPCon电池的上表面，以保护N-TOPCon电池。其中，光伏玻璃层中的光伏玻璃也叫光电玻璃，是一种钢化处理的低铁玻璃，具有非常好的透光性以及很高的硬度，可以适应较大的昼夜温差以及恶劣的天气环境，从而保护N-TOPCon电池。
同样，在一种可能的实施方式中，电池组件还包括光伏背板。光伏背板具有良好的绝缘性、防水性和耐老化性，将光伏背板设置于N-TOPCon电池的背面，进一步保护N-TOPCon电池。光伏背板也可以由钢化玻璃制成。
进一步地，在一种可能的实施方式中，电池组件还包括透光性良好的EVA薄膜层。N-TOPCon电池非常脆弱，光伏玻璃层不能直接附着在N-TOPCon电池的上表面，需要EVA薄膜在中间起到粘接作用。
为了提高电池组件的稳定性，电池组件还可以设置有边框，将多片N-TOPCon电池安装于边框内，以支撑和保护电池组件。
以下结合实施例对本申请示例提供的N-TOPCon电池进行详细描述。
实施例1
本申请实施例1提供一种N-TOPCon电池，通过以下方法制备获得：
以N型硅片为原硅片，依次对该硅片进行：制绒+氧化清洗+硼扩+碱抛+poly+退火+RCA+正背镀氮化硅+丝网印刷。
其中，制绒条件为：体积浓度为20％的KOH，制绒温度为40℃；氧化清洗条件为：将制绒后的硅片加热至600℃，保温60S；将体积浓度为15％HF和体积浓度为5％HCL盐酸，按体积比为3:1配置清洗剂，清洗50s；硼扩条件为：将氧化清洗后的硅片放置于硼扩管中，在700℃的温度下通入硼源500s，然后在1000℃的温度下推结1000s；碱抛的条件为：将上述硅片放置于碱抛槽(体积浓度为10％KOH、温度为40℃、碱抛添加剂的用量为10L)；poly的条件为：通入的气体为PH3和SiH4混合气体，工艺温度为600℃；退火条件为：850℃下进行60min恒温退火；RCA条件为：体积浓度为20％的HF洗去氧化硅；正背镀氮化硅条件为：采用等离子体化学气相沉积法在硅片表面沉积正面和背面氮化硅薄膜，沉积时通入NH3和SiH4气体，其中，工艺温度为500℃，压力为200Pa；丝网印刷条件为：采用DUP网版进行丝网印刷制得N‐TOPCon电池。
实施例2
本申请实施例2提供一种N-TOPCon电池，与实施例1的区别在于，其制备方法中，将制绒后的硅片加热至800℃，保温30s。
对比例1
本申请对比例1提供一种N-TOPCon电池，与实施例1的区别在于，其制备方法为依次进行的制绒+硼扩+碱抛+poly+退火+RCA+正背镀氮化硅+丝网印刷。其中，各个工序的具体条件与实施例1相同。
对比例2
本申请对比例2提供一种N-TOPCon电池，与实施例1的区别在于，氧化清洗中，将制绒后的硅片加热至400℃。
对比例3
本申请对比例3提供一种N-TOPCon电池，与实施例1的区别在于，氧化清洗中，将制绒后的硅片加热至1000℃。
实验例
对实施例1和2以及对比例1和2提供的N-TOPCon电池进行EL测试，以观察其发黑现象。
实施例1的测试结果如图5所示，实施例2的测试结果如图6所示，对比例1的测试结果如图7所示，对比例2的测试结果如图8所示。
结果分析，根据实施例1和2与对比例1的对比图可知，本申请实施例1和2提供的N-TOPCon电池在EL测试时均未出现发黑现象，能够避免花篮印的产生；对比例1提供的N-TOPCon电池具有明显的花篮印。
根据实施例1和2与对比例2的对比图可知，对比例2提供的N-TOPCon电池仍然存在明显的花篮印。
以上所述仅为本申请的优选实施例而已，并不用于限制本申请，对于本领域的技术人员来说，本申请可以有各种更改和变化。凡在本申请的精神和原则之内，所作的任何修改、等同替换、改进等，均应包含在本申请的保护范围之内。

Claims (15)

  1. 一种太阳电池的制备方法，所述制备方法包括依次进行的制绒工序和硼或磷扩散工序，其特征在于，在所述制绒工序和所述硼或磷扩散工序之间，所述制备方法还包括：
    对利用花篮装载进行湿法制绒后的硅片进行加热，在所述硅片的正面和背面均形成第一氧化层以吸附所述硅片的杂质；去除所述硅片的正面和背面的所述第一氧化层。
  2. 根据权利要求1所述的太阳电池的制备方法，其特征在于，所述第一氧化层的厚度为4nm～5nm。
  3. 根据权利要求1所述的太阳电池的制备方法，其特征在于，所述硅片为n型单晶硅片；所述太阳电池包括叠层设置的钝化/减反射膜、钝化层、p型发射极、n型单晶硅片基底、隧穿氧化层、n型多晶硅薄膜和减反射膜。
  4. 根据权利要求1所述的太阳电池的制备方法，其特征在于，所述进行加热的方法包括：将制绒后的所述硅片升温至第一预设温度，保温第一预设时间；
    所述第一预设温度为600℃～800℃，所述第一预设时间为30s～60s。
  5. 根据权利要求4所述的太阳电池的制备方法，其特征在于，所述第一预设温度为700℃～800℃。
  6. 根据权利要求1所述的太阳电池的制备方法，其特征在于，去除所述硅片的正面和背面的所述第一氧化层的方法包括：利用清洗剂清洗所述硅片，清洗时间为30s～50s；所述清洗剂包括HF。
  7. 根据权利要求6所述的太阳电池的制备方法，其特征在于，所述清洗剂包括体积浓度为15％～30％的HF。
  8. 根据权利要求6所述的太阳电池的制备方法，其特征在于，所述清洗剂还 包括HCl。
  9. 根据权利要求8所述的太阳电池的制备方法，其特征在于，所述清洗剂还包括体积浓度为5％～10％的HCl。
  10. 根据权利要求8所述的太阳电池的制备方法，其特征在于，所述清洗剂包括体积比为3:1的HF和HCl。
  11. 根据权利要求6所述的太阳电池的制备方法，其特征在于，在利用清洗剂清洗所述硅片后，在所述硅片的表面形成第二氧化层，对表面形成有第二氧化层的所述硅片进行所述硼或磷扩散工序。
  12. 根据权利要求11所述的太阳电池的制备方法，其特征在于，形成所述第二氧化层的方法包括：利用臭氧吹扫所述硅片。
  13. 一种太阳电池，其特征在于，根据权利要求1～12任一项所述的太阳电池的制备方法制得。
  14. 根据权利要求13所述的太阳电池，其特征在于，所述太阳电池包括叠层设置的钝化/减反射膜、钝化层、p型发射极、n型硅片基底、隧穿氧化层、n型多晶硅薄膜和减反射膜；所述太阳电池具有用于与花篮接触的第一边和不与花篮接触的第二边；所述第一边和所述第二边在EL测试时的发黑程度一致。
  15. 一种电池组件，其特征在于，包括多片权利要求13或14所述的太阳电池。
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