WO2024139653A1 - 负极材料及其制备方法和锂离子电池 - Google Patents

负极材料及其制备方法和锂离子电池 Download PDF

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Publication number
WO2024139653A1
WO2024139653A1 PCT/CN2023/128230 CN2023128230W WO2024139653A1 WO 2024139653 A1 WO2024139653 A1 WO 2024139653A1 CN 2023128230 W CN2023128230 W CN 2023128230W WO 2024139653 A1 WO2024139653 A1 WO 2024139653A1
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Prior art keywords
negative electrode
porous carbon
electrode material
silicon
particle size
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English (en)
French (fr)
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陈曦
庞春雷
孔一鸣
任建国
贺雪琴
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BTR New Material Group Co Ltd
Dingyuan New Energy Technology Co Ltd
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BTR New Material Group Co Ltd
Dingyuan New Energy Technology Co Ltd
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Priority to EP23909586.2A priority Critical patent/EP4576251A4/en
Priority to CN202380065391.2A priority patent/CN120019500A/zh
Publication of WO2024139653A1 publication Critical patent/WO2024139653A1/zh
Priority to US19/013,923 priority patent/US20250149565A1/en
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    • H01M4/583Carbonaceous material, e.g. graphite-intercalation compounds or CFx
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    • H01M2004/026Electrodes composed of, or comprising, active material characterised by the polarity
    • H01M2004/027Negative electrodes
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02EREDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E60/00Enabling technologies; Technologies with a potential or indirect contribution to GHG emissions mitigation
    • Y02E60/10Energy storage using batteries

Definitions

  • the present invention relates to the technical field of lithium ion batteries, and in particular to a negative electrode material and a preparation method thereof, and a lithium ion battery.
  • silicon negative electrode materials have ultra-high theoretical specific capacity (4200mAh/g), which can significantly improve the energy density of lithium-ion batteries.
  • silicon has low electronic conductivity, which will affect the rate performance as an electrode material, and the huge volume change during the charge and discharge process will cause the active material to pulverize, fragment, and lose effective electrical contact with the current collector, ultimately causing the capacity to decay rapidly.
  • silicon and carbon the application of silicon negative electrode materials can be greatly improved.
  • negative electrode materials can be manufactured in a reactor by chemical vapor infiltration (CVI).
  • CVI chemical vapor infiltration
  • a porous carbon matrix is placed in a reactor and infiltrated with a thermally decomposable Si-containing compound at a temperature higher than the decomposition temperature of the compound, so that Si can be deposited on the surface and inside of the porous carbon.
  • the Si-containing compound in the infiltrating gas is usually a silane gas, which first nucleates on the porous carbon surface, and then the infiltrating gas is continuously introduced to allow the Si nuclei to grow.
  • there are usually two forms of competition for deposition namely heterogeneous deposition and homogeneous decomposition deposition.
  • the process parameters are more conducive to heterogeneous deposition, most of the Si particles are deposited on the surface of the porous carbon matrix, and if the process parameters are more conducive to homogeneous decomposition deposition, the Si particles are decomposed into new, very small amorphous particles and distributed in the pores of the porous carbon matrix. In other words, different process parameters affect the proportion of these two depositions in the product, thereby affecting the performance of the negative electrode material.
  • the present application proposes a negative electrode material and a preparation method thereof and a lithium-ion battery, which can reduce volume expansion and improve cycle stability.
  • the present application provides a negative electrode material, which includes an active substance, and the active substance includes a porous carbon matrix and silicon, and the silicon is distributed in the pores and/or surface of the porous carbon matrix; the adsorption constant C value of the negative electrode material is C ⁇ 200, the density of the material after etching the negative electrode material is ⁇ 1, and the density of the negative electrode material is ⁇ 2, 50% ⁇ ( ⁇ 2- ⁇ 1)/ ⁇ 1 ⁇ 80%.
  • the filling degree of silicon in the porous carbon matrix is ⁇ 80%.
  • the negative electrode material has a pore structure, which includes mesopores, micropores and macropores, wherein the volume proportion of the mesopores in all pore structures is >75%, the volume proportion of the micropores in all pore structures is ⁇ 25%, and the volume proportion of the macropores in all pore structures is ⁇ 10%.
  • the particle size of the negative electrode material after etching is 1 ⁇ m to 50 ⁇ m.
  • the silicon includes nanosilicon.
  • the negative electrode material further includes a carbon coating layer located on at least a portion of the surface of the active material.
  • N porous carbon powders of different particle sizes are mixed with a binder and subjected to heat treatment to obtain a porous carbon matrix, wherein N ⁇ 2;
  • the N porous carbon powders with different particle sizes are arranged in order from small to large according to the particle size, and in two adjacent porous carbon powders, the D10 of the porous carbon powder with a larger particle size is not less than the D90 of the porous carbon powder with a smaller particle size.
  • the heat treatment includes: heating and pressurizing the mixed material, and cooling it to obtain the porous carbon matrix.
  • chemical vapor infiltration is used to thermally decompose the reaction gas so that silicon is deposited on the surface and/or in the pores of the porous carbon matrix to obtain the negative electrode material.
  • the total pressure of the reaction system is 0.5 kPa to 50 kPa.
  • the reaction gas includes silane gas, hydrogen gas and an inert gas
  • the gas flow rate of the inert gas is 200 mL/min to 500 mL/min.
  • the reaction gas includes silane gas, hydrogen and inert gas, wherein the hydrogen includes hydrogen as a dilution gas and hydrogen as a carrier gas, wherein the gas flow ratio between the hydrogen as a dilution gas and the hydrogen as a carrier gas is (3-10):1.
  • the present application processes a plurality of porous carbon powders with different particle sizes to obtain a porous carbon matrix, and then composites silicon in the pores and/or surface of the porous carbon matrix, fills the large pores in the porous carbon matrix with smaller pores, and forms a high-density negative electrode material, which greatly improves the compaction density and volume specific capacity of the negative electrode material.
  • the small-particle porous carbon powder can be filled between the pores of the large-particle porous carbon powder, thereby improving the density of the porous carbon matrix, and thus also improving the density of the negative electrode material.
  • Parts by mass refers to the basic unit of measurement for expressing the mass ratio of multiple components. 1 part can represent any unit mass, such as 1g or 2.689g. If we say that the mass of component A is a parts and the mass of component B is b parts, it means the ratio of the mass of component A to the mass of component B is a:b. Alternatively, it means that the mass of component A is aK and the mass of component B is Bk (K is an arbitrary number, indicating a multiple factor). It should not be misunderstood that, unlike the mass parts, the sum of the mass of all components is not limited to 100 parts.
  • a and/or B includes (A and B) and (A or B).
  • the present application provides a negative electrode material, which includes an active substance, and the active substance includes a porous carbon matrix and silicon, wherein silicon is distributed in the pores and/or surface of the porous carbon matrix; the adsorption constant C value of the negative electrode material is C ⁇ 200, and the open porosity of the material after etching the negative electrode material is 50% to 70%.
  • the adsorption constant C value is mainly set at the adsorption temperature (RT), the adsorption temperature is generally 25 ° C, the saturated vapor pressure of the adsorbate gas N2 is p0 (unit: kPa), the saturated multilayer adsorption amount when the gas equilibrium pressure is p is Q (unit: mmol/g), and ...
  • RT adsorption temperature
  • N2 saturated vapor pressure of the adsorbate gas
  • Q unit: mmol/g
  • a linear result can be obtained by fitting.
  • the intercept of the fitted line is set as a
  • the slope is set as b
  • the C value of strong adsorbents such as activated carbon and molecular sieves is >200, and the C value of the negative electrode material in this application is ⁇ 200.
  • mesopores and macropores are located inside the porous carbon matrix or are closed pores, as well as micropores/smaller micropores formed by the conversion of mesopores/micropores after being partially filled with silicon, so that the adsorption constant of the negative electrode material is less than 200, so that a certain amount of space can be reserved to buffer the volume expansion during the insertion and extraction of lithium, and the amount of Si filling can be guaranteed (that is, the proportion of Si in the negative electrode material is relatively high).
  • the negative electrode material can have a higher specific capacity, and on the other hand, the particle strength is relatively high, and it will not break during the process of rolling the electrode sheet.
  • the negative electrode material of the present application contains silicon and a porous carbon matrix, and silicon is uniformly distributed in the skeleton of the porous carbon matrix.
  • the pores in these porous carbon matrices can accommodate silicon, and the remaining pores in the negative electrode material after filling with silicon can accommodate the volume expansion of silicon; and, before compounding with silicon, the porous carbon matrix has pores mainly in the form of micropores (within the range of ⁇ 2nm), and the open porosity of the material after etching the negative electrode material is 50% to 70%, which is conducive to the dispersed filling of silicon.
  • the remaining pores in the porous carbon matrix are mainly unfilled mesopores and macropores, which are located inside the porous carbon matrix or are closed pores, as well as micropores/smaller micropores formed by the conversion of mesopores/micropores after partial filling with silicon, so that the adsorption constant of the negative electrode material is less than 200.
  • the smaller the adsorption constant of the negative electrode material the smaller the proportion of micropores in the negative electrode material. It can be seen that the negative electrode material is mainly composed of mesopores and macropores.
  • a small amount of mesopores and macropores can provide buffer space for Si expansion during charging and discharging, and on the other hand, ensure the stress diffusion distribution of silicon.
  • the filling degree of silicon can be adjusted to improve the specific capacity of the negative electrode material. It can also alleviate the volume expansion of Si, improve the particle strength of the negative electrode material, and reduce the collapse and breakage of the material structure during the rolling or cycling of the pole piece, thereby improving the cycle performance and electrochemical performance of the material under the synergistic effect of the above-mentioned overall structure.
  • the negative electrode material is mainly mesopores and macropores; a small amount of mesopores and macropores can provide a buffer space for Si expansion during charging and discharging, ensuring the stress diffusion distribution; on the other hand, the density increase range of the negative electrode material is controlled, and then the filling degree of silicon can be adjusted to improve the specific capacity of the negative electrode material. It can also alleviate the volume expansion of silicon, improve the particle strength of the negative electrode material, and reduce the collapse and breakage of the material structure during the rolling or cycling of the pole piece, so that the negative electrode material can achieve a balance between high specific capacity, low expansion performance and high cycle performance.
  • the open porosity of the negative electrode material after etching is 50% to 70%, specifically 50%, 52%, 54%, 56%, 58%, 60%, 70% or any value between 50% and 70%.
  • the pores of the material after etching the negative electrode material have a pore size of 0 to 1 ⁇ m, specifically 0.001 ⁇ m, 0.01 ⁇ m, 0.05 ⁇ m, 0.1 ⁇ m, 0.3 ⁇ m, 0.5 ⁇ m, 1 ⁇ m or any value greater than 0 and between 0 and 1 ⁇ m.
  • the density of the negative electrode material is 1.8 g/cm 3 to 2.3 g/cm 3 , specifically 1.8 g/cm 3 , 2.0 g/cm 3 , 2.2 g/cm 3 , 2.3 g/cm 3 or any value between 1.8 g/cm 3 and 2.3 g/cm 3 ;
  • the density of the negative electrode material after etching is 1 g/cm 3 to 1.5 g/cm 3 , specifically 1 g/cm 3 , 1.2 g/cm 3 , 1.4 g/cm 3 , 1.5 g/cm 3 or any value between 1 g/cm 3 and 1.5 g/cm 3 .
  • the negative electrode material has a porous structure, and the total pore volume of the negative electrode material measured by a nitrogen adsorption method is less than 0.05 cm 3 /g, and may be 0.04 cm 3 /g, 0.035 cm 3 /g, 0.032 cm 3 /g, 0.030 cm 3 /g, 0.028 cm 3 /g, 0.025 cm 3 / g , 0.024 cm 3 /g or 0.02 cm 3 /g, etc., which is not limited here.
  • the adsorption constant C value of the material after etching the negative electrode material is 200 ⁇ C ⁇ 500, specifically 200, 250 or 300, 400, 499, etc., which is not limited here.
  • the method for calculating the adsorption constant C value of the material after etching the negative electrode material is the same as the method for calculating the adsorption constant C value of the negative electrode material mentioned above.
  • the outermost layer of the negative electrode material also includes a carbon coating layer. Further preferably, the thickness of the carbon coating layer is 1nm-100nm, specifically 1nm, 10nm, 20nm, 50nm, 70nm, 100nm or any value between 1nm-100nm.
  • the introduction of the carbon coating layer is mainly to improve the electronic conductivity of the negative electrode material in the negative electrode, further buffer the volume change of silicon and reduce the excessive generation of SEI film on the surface of the negative electrode material.
  • the mass percentage of silicon in the negative electrode material is 10% to 90%, preferably 20% to 80%. It can be understood that the mass percentage of silicon in the negative electrode material can be 10%, 12%, 14%, 16%, 18%, 20%, 25%, 30%, 35%, 40%, 50%, 60%, 70%, 80% or 90%. The mass percentage of silicon in the negative electrode material can also be other values between 10% and 90%.
  • the average particle size D50 of the negative electrode material is 1 ⁇ m to 25 ⁇ m, preferably 2 ⁇ m to 15 ⁇ m, and more preferably 3 ⁇ m to 10 ⁇ m. It should be explained that when the average particle size of the negative electrode material is ⁇ 1 ⁇ m, the tap density of the electrode can be reduced, thereby seriously affecting its processing performance as a negative electrode of a lithium-ion battery, reducing the problem of too low compaction density and low energy density of the pole piece, and a suitable volume specific capacity can be obtained. In addition, when the average particle size of the negative electrode material is ⁇ 25 ⁇ m, the slurry forming the electrode can be appropriately coated to a uniform thickness.
  • the average particle size D 50 of the negative electrode material can be 1 ⁇ m, 2 ⁇ m, 3 ⁇ m, 4 ⁇ m, 5 ⁇ m, 6 ⁇ m, 7 ⁇ m, 8 ⁇ m, 9 ⁇ m, 10 ⁇ m, 12 ⁇ m, 14 ⁇ m, 15 ⁇ m, 17 ⁇ m, 19 ⁇ m, 21 ⁇ m, 23 ⁇ m or 25 ⁇ m.
  • the average particle size D 50 of the negative electrode material may also be other values between 1 ⁇ m and 25 ⁇ m.
  • the negative electrode material further includes a carbon coating layer located on at least part of the surface of the active material.
  • the carbon coating layer as a shell can mechanically constrain the active material and improve the electronic conductivity of the negative electrode material in the negative electrode; further, the carbon coating layer allows lithium ions to pass through, but reduces the interaction between the electrolyte and the internal active material, further buffers the volume change of silicon and reduces the excessive generation of SEI film on the surface of the negative electrode material.
  • the thickness of the carbon coating layer is 1nm to 100nm. It is understandable that the average thickness of the coating layer can be 1nm, 5nm, 10nm, 15nm, 20nm, 25nm, 30nm, 35nm, 40nm, 45nm, 50nm, 55nm, 60nm, 65nm, 70nm, 75nm, 80nm, 85nm, 90nm, 95nm or 100nm. The average thickness of the coating layer can also be other values between 1nm and 100nm.
  • the present application also provides a method for preparing a negative electrode material, as shown in FIG1 , the preparation method comprises:
  • the present application controls the relevant physical characteristics of the obtained porous carbon matrix, including the pore distribution, porosity, pore shape, etc. of the porous carbon matrix; on the other hand, controls the subsequent silicon composite process, and further prepares the negative electrode material on the skeleton of the prepared porous carbon matrix by adjusting the process parameters, so that the micropores in the negative electrode material dominate, thereby alleviating the volume expansion during the battery cycle, ensuring the strength of the negative electrode material particles, and reducing the probability of particle collapse and damage during the cycle.
  • the N porous carbon powders with different particle sizes in S1 are arranged in order from small to large according to the particle size, and then numbered as C1, C2, C3..., CN, among which the average particle size of the C1 porous carbon powder is the smallest, and the average particle size of the CN porous carbon powder is the largest.
  • the ratio of D50 of the porous carbon powder with a smaller particle size to the D50 of the porous carbon powder with a larger particle size is 0.25-0.9.
  • the ratio of the D50 particle size of the C1 porous carbon powder to the D50 particle size of the C2 porous carbon powder is 0.25-0.9. Specifically, it can be 0.25, 0.3, 0.4, 0.5, 0.6, 0.7, 0.8, 0.9 or any value between 0.25-0.9.
  • the ratio of the mass of the porous carbon powder with a smaller particle size to the mass of the porous carbon powder with a larger particle size is 0.05-0.75.
  • the ratio of the mass of the C2 porous carbon powder to the mass of the C3 porous carbon powder is 0.05-0.75. Specifically, it can be 0.05, 0.15, 0.25, 0.35, 0.45, 0.55, 0.65, 0.75 or any value between 0.05-0.75.
  • the D10 of the porous carbon powder with a larger particle size is not smaller than the D90 of the porous carbon powder with a smaller particle size, for example, the D10 particle size of the C2 porous carbon powder is not smaller than the D90 particle size of the C1 porous carbon powder, and the D10 particle size of the C3 porous carbon powder is not smaller than the D90 particle size of the C2 porous carbon powder.
  • the raw material of the porous carbon matrix includes three porous carbon powders with different particle sizes.
  • the three porous carbon powders with different particle sizes are divided into C1, C2, and C3 in order from small to large particle sizes.
  • the D50 particle size ratio of C3:C2:C1 is (4-7):(2-3.5):1, specifically 4:2:1, 4:3.5:1, 5:2:1, 5:3.5:1, 6:2:1, 6:3:1, 6:3.5:1, 7:2:1, 7:3.5:1 or any value between (4-7):(2-3.5):1.
  • the mass ratio of C3:C2:C1 is (18-25):(6-12):1, specifically 18:6:1, 18:12:1, 20:6:1, 20:10:1, 20:12:1, 23:6:1, 23:12:1, 25:6:1, 25:12:1 or any value between (18-25):(6-12):1.
  • the average particle sizes of C3, C2 and C1, i.e., D50 are 100 ⁇ m to 500 ⁇ m, 70 ⁇ m to 400 ⁇ m and 20 ⁇ m to 130 ⁇ m, respectively.
  • the average pore size of the porous carbon matrix prepared using three porous carbon powders of different particle sizes as raw materials is 2nm to 50nm, specifically 2nm, 10nm, 20nm, 30nm, 40nm, 50nm or any value between 2nm and 50nm.
  • the particle gradation of the porous carbon powder in the present application is preferably a three-level gradation method, that is, using three porous carbon powders with different particle sizes as the raw materials of the porous carbon matrix.
  • the small-sized porous carbon particles will fill the gaps between the large-sized porous carbon particles, and the small-sized porous carbon particles will further fill the gaps between the large-sized porous carbon particles and the medium-sized porous carbon particles. If only one type of porous carbon powder raw material is used to prepare the porous carbon matrix, there will be large gaps between these porous carbon particles, that is, the pores of the porous carbon matrix are large.
  • porous carbon powders of various different particle sizes as the raw material for the porous carbon matrix is beneficial to improving the density of the prepared negative electrode material.
  • the binder in S1 may be polyvinyl butyral.
  • the mixing method in S1 includes at least one of VC mixing, manual mixing, normal temperature film pressing, and spray drying.
  • the heat treatment in S1 includes: heating and pressurizing the mixed material after mixing, and cooling it to obtain a porous carbon matrix.
  • the mixed material after the first mixing can be spread in a mold, and then the mold is heated, pressurized, cooled, and demolded to obtain a porous carbon matrix.
  • a release agent needs to be applied to the inner surface of the mold to facilitate rapid removal of the porous carbon matrix.
  • the mold comprises a steel mold.
  • the pressure of the pressurization treatment is 5MPa to 50MPa, specifically 5MPa, 10MPa, 20MPa, 30MPa, 40MPa, 50MPa or any value between 5MPa and 50MPa.
  • the time is 0.2h to 10h, specifically 0.5h, 1h, 2h, 3h, 4h, 5h or any value between 0.5h and 5h.
  • porous carbon matrix is critical to achieving the penetration and infiltration of silicon in the porous carbon matrix. If the porosity of the matrix and the size of the pores are too large, the density of the composite material obtained by infiltrating silicon into the matrix is low; if they are too small, it is difficult to introduce the silicon source gas deeply into the deeper areas of the pores so that the gas forms silicon therein. Therefore, one of the research objectives of this application is to find suitable process parameters for deeply introducing silicon into the pores of the porous carbon matrix used, and to make the prepared composite material have a correct balance between good mechanical strength and electrochemical properties.
  • the compounding method in S2 includes: any one of chemical vapor infiltration, dry mixing process and wet mixing process, and chemical vapor infiltration is more preferred.
  • the dry mixing process is to dry-mix the porous carbon matrix with silicon by ball milling
  • the wet mixing process is to mix the porous carbon matrix with a silicon-containing solution.
  • the chemical vapor infiltration method used in the composite of the present application includes: The infiltration furnace is placed, and the infiltration furnace is evacuated, and then heated to the reaction temperature, and silicon source gas is introduced to perform infiltration deposition.
  • chemical vapor infiltration is used to thermally decompose the reaction gas so that silicon is deposited on the surface and/or in the pores of the porous carbon matrix to obtain the negative electrode material.
  • the reaction gas includes silane gas, hydrogen gas, and an inert gas.
  • the reaction gas includes silane gas
  • the silane gas includes at least one of Si n H (2n+2) and Si n H (2n+2) Z (2n+2)-m , wherein n ⁇ 1, m ⁇ 2n+2, and Z includes at least one halogen element of F, Cl, Br, and I.
  • the reaction temperature of thermal decomposition is 400°C to 800°C, specifically 400°C, 500°C, 600°C, 700°C, 800°C or any value between 400°C and 800°C.
  • the deposition time is 5 h to 500 h, specifically 5 h, 10 h, 100 h, 250 h, 500 h or any value between 5 h and 500 h.
  • the pressure of the reaction system before the reaction gas is introduced is 1Pa to 20Pa, specifically 1Pa, 5Pa, 10Pa, 15Pa, 20Pa or any value between 1Pa and 20Pa.
  • the oxygen content in the reaction system is ⁇ 0.5%.
  • the total pressure of the reaction system is 0.5 kPa to 50 kPa, and specifically can be 0.5 kPa, 1 kPa, 5 kPa, 10 kPa, 20 kPa, 30 kPa, 40 kPa, 50 kPa or any value between 0.5 kPa and 50 kPa.
  • the temperature rise curve during heating includes: at a heating rate of 1°C/min to 50°C/min, specifically 1°C/min, 10°C/min, 20°C/min, 30°C/min, 40°C/min, 50°C/min or any value between 1°C/min and 50°C/min, first rising to 10°C to 20°C below the desired reaction temperature, and then continuing to heat at a heating rate of 0.05°C/min to 0.5°C/min to the desired reaction temperature, more preferably continuing to heat at a heating rate of 0.1°C/min.
  • CVI chemical vapor infiltration
  • first vacuum is performed to make the gas pressure inside and outside the porous carbon matrix close to zero, and then the temperature in the infiltration furnace is quickly heated to about 10°C-20°C below the temperature of gas decomposition at a heating rate of 1°C/min-50°C/min, and then slowly heated to the decomposition temperature of the gas at a heating rate of 0.1°C/min, thereby ensuring that the temperature inside and outside the porous carbon matrix remains consistent and the stability of the thermodynamic conditions is ensured. Then, silane gas diluted with inert gases such as H2 and argon is introduced into the infiltration furnace, which can ensure the uniform diffusion of silane gas inside the porous carbon, which is conducive to its uniform penetration.
  • inert gases such as H2 and argon
  • the infiltration deposition further includes: when the silicon source gas flows from the front end to the end of the porous carbon matrix, the end of the porous carbon matrix is heated to the reaction temperature of the gas using a movable heating coil, so that the silicon source gas undergoes a densification reaction on the porous carbon matrix at the end to perform infiltration deposition; and then the movable heating coil is gradually moved from the end to the front end to cause densification infiltration deposition to occur in each part of the porous carbon matrix.
  • the gas flow rate of hydrogen is 100 mL/min to 500 mL/min, specifically 100 mL/min, 200 mL/min, 300 mL/min, 400 mL/min, 500 mL/min or any value between 100 mL/min and 500 mL/min.
  • the gas flow rate of argon is 200 mL/min to 500 mL/min, specifically 200 mL/min, 300 mL/min, 400 mL/min, 500 mL/min or any value between 200 mL/min and 500 mL/min.
  • the negative electrode material prepared by the chemical vapor infiltration method has a porosity of about 10%-15%, in which silicon is dispersed and embedded in the porous carbon matrix.
  • the carbon source comprises a solid carbon source
  • the solid carbon source comprises at least one of citric acid, glucose, asphalt, phenolic resin and furfural resin.
  • the carbon source comprises a liquid carbon source.
  • the temperature of thermal cracking is 600°C to 1200°C.
  • the heating rate of thermal cracking is 0.1°C/min to 50°C/min.
  • the closed porosity is usually measured by density method and helium measurement method. For example, take anhydrous ethanol with a volume of V1 into a measuring cylinder, immerse the dry material in it for 5 minutes, and vacuum until there are no bubbles in the ethanol. The volume of ethanol at this time is recorded as V2; take out the material and record the volume at this time as V3. Calculate the porosity: (V1-V3)/(V2-V3)*100%. Measure 3 samples in each group and take the average.
  • step (1) Paste a layer of polytetrafluoroethylene paper on the working surface of the steel mold, and then evenly apply dimethyl silicone oil on the inner surface of the mold, and then pour the powder mixed in step (1) into the mold. Then put the mold in an oven and heat it at 200°C for 1 hour, and finally apply a pressure of 10MPa to the mold on a press to obtain a porous carbon matrix;
  • the CVI infiltration furnace was powered on and heated to 400°C at a heating rate of 8°C/min, and then heated to 420°C at a heating rate of 0.1°C/min.
  • the vacuum system was turned on again, and the furnace was evacuated to 1 Pa.
  • a mixed gas of silane, H2, and Ar was introduced from the bottom to the top of the vertical CVI furnace.
  • the H2 gas flow rate was 180 mL/min
  • the Ar flow rate was 300 mL/min
  • the molar ratio of H2 to silane was 12, and the flow ratio of diluted H2 to carrier gas H2 was 5.
  • the material was taken out, ultrasonically cleaned with ethanol for 30 minutes, and dried at 80° C. to obtain a negative electrode material, wherein the size of silicon was 2-100 nm.
  • This embodiment provides a negative electrode material, and the specific preparation method thereof includes:
  • the CVI furnace was powered on and heated to 400°C at a heating rate of 6°C/min, and then heated to 420°C at a heating rate of 0.1°C/min.
  • the vacuum system was turned on again and evacuated to 6 Pa, and then a mixed gas of silane, H2 and Ar was introduced from the bottom to the top of the vertical CVI furnace, with a H2 gas flow rate of 350 mL/min, an Ar flow rate of 380 mL/min, a molar ratio of H2 to silane of 3, and a flow ratio of diluted H2 to carrier gas H2 of 8;
  • This embodiment provides a negative electrode material, and the specific preparation method thereof includes:
  • the CVI furnace was powered on and heated to 400°C at a heating rate of 10°C/min, and then heated to 450°C at a heating rate of 0.2°C/min.
  • the vacuum system was turned on again, and the furnace was evacuated to 10Pa.
  • a mixed gas of silane, H2, and Ar was introduced from the bottom to the top of the vertical CVI furnace.
  • the H2 gas flow rate was 300mL/min
  • the Ar flow rate was 380mL/min
  • the molar ratio of H2 to silane was 4
  • the flow ratio of diluted H2 to carrier gas H2 was 8;
  • the composite material is taken out, ultrasonically cleaned with ethanol for 60 minutes, and then dried in a drying oven at 90° C. to obtain a negative electrode material, wherein the size of silicon is 10-90 nm.
  • Embodiment 4 is a diagrammatic representation of Embodiment 4:
  • This embodiment provides a negative electrode material, and the specific preparation method thereof includes:
  • the CVI furnace was powered on and heated to 420°C at a heating rate of 8°C/min, and then heated to 450°C at a heating rate of 0.1°C/min.
  • the vacuum system was turned on again and evacuated to 10Pa, and then a mixed gas of silane, H2 and Ar was introduced from the bottom to the top of the vertical CVI furnace, with a H2 gas flow rate of 300mL/min, an Ar flow rate of 380mL/min, a molar ratio of H2 to silane of 2.5, and a flow ratio of diluted H2 to carrier gas H2 of 10;
  • the composite material was taken out, ultrasonically cleaned with ethanol for 30 minutes, and then dried in a drying oven at 100° C. to obtain a negative electrode material, wherein the size of silicon was 20-90 nm.
  • This embodiment provides a negative electrode material, and the specific preparation method thereof includes:
  • the composite material was taken out, ultrasonically cleaned with ethanol for 70 minutes, and then dried in a drying oven at 100° C. to obtain a negative electrode material, wherein the size of silicon was 20-70 nm.
  • This embodiment provides a negative electrode material, and the specific preparation method thereof includes:
  • This embodiment provides a negative electrode material, and the specific preparation method thereof includes:

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Abstract

一种负极材料及其制备方法和锂离子电池,涉及锂离子电池技术领域。该负极材料包括多孔碳基体和硅,所述硅弥散分布在所述多孔碳基体的孔隙和/或表面。该负极材料的制备方法包括:将多孔碳粉料和粘结剂混合、处理,得到多孔碳基体;在所述多孔碳基体上复合硅纳米颗粒,得到所述负极材料。通过对工艺参数等进行调整选择,降低了多孔碳之间的孔隙率,还实现了硅对多孔碳孔隙的填充,进而形成高致密度的负极材料,大大提高了压实密度和体积比容量,提高了其在锂离子电池中的相关电化学性能。

Description

负极材料及其制备方法和锂离子电池
本申请要求于2022年12月28日提交中国专利局,申请号为2022117004432、申请名称为“负极材料及其制备方法和锂离子电池”的中国专利申请的优先权,其全部内容通过引用结合在本申请中。
技术领域
本发明涉及锂离子电池技术领域,尤其涉及一种负极材料及其制备方法和锂离子电池。
背景技术
目前绝大多数商用锂离子电池仍然使用低理论比容量的石墨作为负极材料,严重限制了锂离子电池的应用前景。与石墨相比,硅负极材料具有超高的理论比容量(4200mAh/g),能够显著地提高锂离子电池的能量密度。但是,硅的电子导电率低,作为电极材料会影响倍率性能,且在充放电过程中体积变化巨大,会导致活性材料粉化、碎裂、与集流体失去有效的电接触等,最终使得容量迅速衰减。对此,通过将硅和碳进行复合,能大大提高硅负极材料的应用。
一般而言,负极材料可以通过化学气相渗透法(CVI)在反应器中制造。具体的,将多孔碳基体放在反应器中,并与可热分解的含Si化合物渗透气体,在高于该化合物分解温度下进行接触,就能使得Si沉积在多孔碳表面及内部。渗透气体中的含Si化合物通常为硅烷气体,其在多孔碳表面首先形核,后续持续通入渗透气体,使得Si晶核长大。但是在反应器中,通常存在两种沉积形式的竞争,分别是异相沉积和均相分解沉积。如果工艺参数更有利于进行异相沉积,则Si粒子大多沉积在多孔碳基体的表面,而如果工艺参数更有利于进行均相分解沉积,则Si粒子分解为新的、尺寸非常小的无定型粒子,并且分布在多孔碳基体的孔隙中。也就是说,不同的工艺参数影响这两种沉积在产物中所占的比例,进而影响负极材料的性能。
现有工艺中,以硅烷作为前驱体制备负极材料时,存在以下几点劣势:(1)相比于碳源气体,硅烷气体的分子量较大,渗透深度小,Si沉积效率低;(2)如果工艺参数设置不合理,CVI致密时容易在碳基材料表面结壳,这就需要再进行机加处理,延长了制备周期,提高了制备成本。显然,通过这些工艺制备的负极材料中的硅很难均匀分布在整个体系中,且体系的孔隙率过大,难以充分填充,进而使得制成的负极材料在电池进行充放电过程中的电化学性能较差。因此,需要研究开发一种致密度高的负极材料,来提高锂离子电池的电化学性能。
申请内容
鉴于此,本申请提出了负极材料及其制备方法和锂离子电池,能降低体积膨胀、提高循环稳定性。
第一方面,本申请提供一种负极材料,负极材料包括活性物质,所述活性物质包括多孔碳基体和硅,所述多孔碳基体的孔隙和/或表面分布有所述硅;所述负极材料的吸附常数C值为C<200,所述负极材料刻蚀后的材料的开口孔隙率为50%~70%。
第二方面,本申请提供一种负极材料,所述负极材料包括活性物质,所述活性物质包括多孔碳基体和硅,所述多孔碳基体的孔隙和/或表面分布有所述硅;负极材料的吸附常数C值为C<200,所述负极材料刻蚀后的材料的密度为ρ1,所述负极材料的密度为ρ2,50%≤(ρ2-ρ1)/ρ1≤80%。
在一些实施方式中,所述硅的粒径为1nm~100nm。
在一些实施方式中,所述负极材料刻蚀后的材料的孔的孔径为0~1μm。
在一些实施方式中,所述硅在所述多孔碳基体中的填充度≥80%。
在一些实施方式中,所述负极材料的密度为1.8g/cm3~2.3g/cm3,所述负极材料刻蚀后的材料的密度为1g/cm3~1.5g/cm3
在一些实施方式中,所述负极材料具有孔结构,所述孔结构包括介孔、微孔及大孔,其中,所述介孔在所有孔结构中的体积占比>75%,所述微孔在所有孔结构中的体积占比<25%,所述大孔在所有孔结构中的体积占比<10%。
在一些实施方式中,所述负极材料具有孔结构,按氮气吸附法所测定的所述孔结构的总孔体积<0.05cm3/g。
在一些实施方式中,所述负极材料中的闭孔的体积≤0.2cm3/g。
在一些实施方式中,所述负极材料刻蚀后的材料的吸附常数C值为200<C<500。
在一些实施方式中,所述负极材料的核磁共振测试中,-10ppm~20ppm之间具有Si-C共振峰,其强度为D1,-90ppm~-110ppm之间具有Si共振峰,其强度为D2,且D2/D1≥100。
在一些实施方式中,所述负极材料刻蚀后的材料的粒径为1μm~50μm。
在一些实施方式中,所述硅包括纳米硅。
在一些实施方式中,所述负极材料还包括位于所述活性物质至少部分表面的碳包覆层。
在一些实施方式中,所述碳包覆层的厚度为1nm~100nm。
在一些实施方式中,所述负极材料中硅的质量百分含量为10%~90%。
在一些实施方式中,所述负极材料的比表面积为0.5m2/g~50m2/g。
在一些实施方式中,所述负极材料的平均粒径为1μm~25μm。
第二方面,本申请提供一种负极材料的制备方法,包括:
将N种不同粒径尺寸的多孔碳粉与粘结剂混合、热处理,得到多孔碳基体,其中N≥2;
在所述多孔碳基体上复合硅,得到所述负极材料。
在一些实施方式中,按照粒径尺寸的大小,将所述N种不同粒径尺寸的多孔碳粉从小到大依次进行排列,在相邻的两种所述多孔碳粉中,粒径小的所述多孔碳粉的D50与粒径大的所述多孔碳粉的D50的比值为0.25~0.9。
在一些实施方式中,按照粒径尺寸的大小,将所述N种不同粒径尺寸的多孔碳粉从小到大依次进行排列,在相邻的两种所述多孔碳粉中,粒径小的所述多孔碳粉的质 量与粒径大的所述多孔碳粉的质量的比值为0.05~0.75。
在一些实施方式中,按照粒径尺寸的大小,将所述N种不同粒径尺寸的多孔碳粉从小到大依次进行排列,在相邻的两种所述多孔碳粉中,粒径大的所述多孔碳粉的D10不小于粒径小的所述多孔碳粉的D90。
在一些实施方式中,按照粒径尺寸的大小,将所述N种不同粒径尺寸的多孔碳粉从小到大依次进行排列,N=3时,大尺寸的所述多孔碳粉:中间尺寸的所述多孔碳粉:小尺寸的所述多孔碳粉的D50之比为(4~7):(2~3.5):1。
在一些实施方式中,按照粒径尺寸的大小,将所述N种不同粒径尺寸的多孔碳粉从小到大依次进行排列,N=3时,大尺寸的所述多孔碳粉:中间尺寸的所述多孔碳粉:小尺寸的所述多孔碳粉的质量之比为(18~25):(6~12):1。
在一些实施方式中,按照粒径尺寸的大小,将所述N种不同粒径尺寸的多孔碳粉从小到大依次进行排列,N=3时,大尺寸的所述多孔碳粉、中间尺寸的所述多孔碳粉、小尺寸的所述多孔碳粉的D50分别为100μm~500μm、70μm~400μm、20μm~130μm。
在一些实施方式中,按照粒径尺寸的大小,将所述N种不同粒径尺寸的多孔碳粉从小到大依次进行排列,N=3时,三种不同粒径尺寸的所述多孔碳粉制备得到的所述多孔碳基体的平均孔径为2nm-50nm。
在一些实施方式中,所述粘结剂包括聚乙烯醇缩丁醛。
在一些实施方式中,所述N种不同粒径尺寸的多孔碳粉的质量与所述粘结剂的质量比为(5~20):1。
在一些实施方式中,所述热处理包括:将所述混合之后的混合物料进行加热处理、加压处理,冷却,得到所述多孔碳基体。
在一些实施方式中,采用化学气相渗透法将反应气体热分解反应,使多孔碳基体的表面和/或孔隙中沉积有硅,得到负极材料。
在一些实施方式中,所述反应气体包括硅烷气体、氢气和惰性气体。
在一些实施方式中,所述反应气体包括硅烷气体,所述硅烷气体包括SinH(2n+2)和SinH(2n+2)Z(2n+2)-m中的至少一种,其中n≥1,m<2n+2,Z包括F、Cl、Br、I中的至少一种卤族元素。
在一些实施方式中,所述热分解的反应温度为400℃~800℃。
在一些实施方式中,所述沉积的时间为5h~500h。
在一些实施方式中,升温曲线包括:以1℃/min~50℃/min的升温速率先加热至比所述热分解的反应温度低10℃~20℃的温度处,然后再以0.05℃/min~0.5℃/min的升温速率继续加热至所述热分解的反应温度。
在一些实施方式中,通入反应气体之前反应体系的压强为1Pa~20Pa。
在一些实施方式中,通入反应气体之后,反应体系的总压强为0.5kPa~50kPa。
在一些实施方式中,所述反应气体内的氧含量≤0.5%。
在一些实施方式中,所述采用化学气相渗透法将反应气体热分解,使多孔碳基体的表面和/或孔隙中沉积有硅的步骤还包括:所述反应气体从多孔碳基体的前端流向末端时,采用可移动加热线圈对所述多孔碳基体的末端加热至所述热分解的反应温度, 使所述反应气体在末端处的多孔碳基体上发生致密化渗透沉积,之后再将所述可移动加热线圈从末端逐步移动至前端,使所述多孔碳基体的每一部分都发生致密化渗透沉积。
在一些实施方式中,反应气体包括硅烷气体、氢气和惰性气体,所述氢气与所述硅烷气体的摩尔比为(5~20):1。
在一些实施方式中,反应气体包括硅烷气体、氢气和惰性气体,所述氢气的气流量为100mL/min~500mL/min。
在一些实施方式中,反应气体包括硅烷气体、氢气和惰性气体,所述惰性气体的气流量为200mL/min~500mL/min。
在一些实施方式中,反应气体包括硅烷气体、氢气和惰性气体,所述氢气包括作为稀释气体的氢气和作为载气的氢气,其中作为稀释气体的氢气与作为载气的氢气之间的气流量之比为(3~10):1。
第三方面,本申请提供一种锂离子电池,包括如第一方面所述的负极材料或根据第二方面所述负极材料的制备方法制备的负极材料。
相比于现有技术,本申请的技术方案至少具有以下技术效果:
本申请的负极材料中包含硅和多孔碳基体,且硅均匀分布在多孔碳基体的骨架中,负极材料刻蚀后的材料的开口孔隙率为50%~70%,这些开口孔隙为硅提供了空间,用以容纳硅的体积膨胀。控制负极材料的吸附常数小于200,吸附常数C越小,表明负极材料中的微孔的占比越小,由此可见负极材料中主要是介孔和大孔;少量介孔和大孔可以为充放电时Si膨胀提供缓冲空间,另一方面保证了应力弥散分布;在负极材料应用于锂离子电池中时,可以调控硅的填充程度,提升负极材料的比容量,还可以缓解硅的体积膨胀,提高负极材料的颗粒强度,减少极片辊压或循环过程中材料结构坍塌、破碎,从而在上述整体结构的协同作用下提升材料的循环性能、电化学性能等。
本申请的负极材料中包含硅和多孔碳基体,且硅均匀分布在多孔碳基体的骨架中,负极材料刻蚀后的材料的密度为ρ1,负极材料的密度为ρ2,50%≤(ρ2-ρ1)/ρ1≤80%。一方面控制负极材料的吸附常数小于200,吸附常数C越小,表明负极材料中的微孔的占比越小,由此可见负极材料中主要是介孔和大孔;少量介孔和大孔可以为充放电时Si膨胀提供缓冲空间,保证了应力弥散分布;另一方面控制负极材料的密度增加范围,进而能够调控硅的填充程度,提升负极材料的比容量,还可以缓解硅的体积膨胀,提高负极材料的颗粒强度,减少极片辊压或循环过程中材料结构坍塌、破碎,可以使得负极材料在高比容量、低膨胀性能以及高循环性能之间达到平衡。
本申请将多种不同粒径多孔碳粉处理后得到多孔碳基体,再在多孔碳基体的孔隙和/或表面复合硅,将多孔碳基体中的大孔隙填充为更小的孔隙,形成高致密度的负极材料,大大提高了负极材料的压实密度和体积比容量。同时,通过使用多种不同粒径的多孔碳粉,可以让小粒径的多孔碳粉填充在大粒径多孔碳粉的孔隙之间,提高了多孔碳基体的致密度,进而也就提高了负极材料的致密度。
本申请的负极材料和锂离子电池中通过使用上述负极材料,因此也具有超高的压实密度和体积比容量,进而提高了锂离子电池的可逆比容量以及循环稳定性。
附图说明
为了更清楚地说明本发明实施例的技术方案,下面将对实施例中所需要使用的附图作简单地介绍,应当理解,以下附图仅示出了本发明的某些实施例,因此不应被看作是对本发明范围的限定。
图1为负极材料的制备工艺流程图。
具体实施方式
如本文所用之术语:
“由……制备”与“包含”同义。本文中所用的术语“包含”、“包括”、“具有”、“含有”或其任何其它变形,意在覆盖非排它性的包括。例如,包含所列要素的组合物、步骤、方法、制品或装置不必仅限于那些要素,而是可以包括未明确列出的其它要素或此种组合物、步骤、方法、制品或装置所固有的要素。
连接词“由……组成”排除任何未指出的要素、步骤或组分。如果用于权利要求中,此短语将使权利要求为封闭式,使其不包含除那些描述的材料以外的材料,但与其相关的常规杂质除外。当短语“由……组成”出现在权利要求主体的子句中而不是紧接在主题之后时,其仅限定在该子句中描述的要素;其它要素并不被排除在作为整体的所述权利要求之外。
当量、浓度、或者其它值或参数以范围、优选范围、或一系列上限优选值和下限优选值限定的范围表示时,这应当被理解为具体公开了由任何范围上限或优选值与任何范围下限或优选值的任一配对所形成的所有范围,而不论该范围是否单独公开了。例如,当公开了范围“1~5”时,所描述的范围应被解释为包括范围“1~4”、“1~3”、“1~2”、“1~2和4~5”、“1~3和5”等。当数值范围在本文中被描述时,除非另外说明,否则该范围意图包括其端值和在该范围内的所有整数和分数。
在这些实施例中,除非另有指明,所述的份和百分比均按质量计。
“质量份”指表示多个组分的质量比例关系的基本计量单位,1份可表示任意的单位质量,如可以表示为1g,也可表示2.689g等。假如我们说A组分的质量份为a份,B组分的质量份为b份,则表示A组分的质量和B组分的质量之比a:b。或者,表示A组分的质量为aK,B组分的质量为Bk(K为任意数,表示倍数因子)。不可误解的是,与质量份数不同的是,所有组分的质量份之和并不受限于100份之限制。
“和/或”用于表示所说明的情况的一者或两者均可能发生,例如,A和/或B包括(A和B)和(A或B)。
第一方面,本申请提供一种负极材料,负极材料包括活性物质,活性物质包括多孔碳基体和硅,其中,多孔碳基体的孔隙和/或表面分布有硅;负极材料的吸附常数C值为C<200,负极材料刻蚀后的材料的开口孔隙率为50%~70%。
需要说明的是,吸附常数C值主要是通过设定在吸附温度(RT)时,吸附温度一般为25℃,吸附质气体N2的饱和蒸气压为p0(单位为:kPa),气体平衡压力为p时的饱和多层吸附量为Q(单位为:mmol/g),以为纵坐标,以p/p0为横坐标作图,可以拟合得到线性结果,设定拟合得到直线的截距为a,斜率为b,则定义得到吸附常数 C=b/a+1。
一般活性碳、分子筛等强吸附剂的C值>200,本申请中的负极材料C值<200,吸附常数C越小,表明负极材料中的微孔的占比越小,由此可见负极材料中主要是介孔和大孔;在沉积过程中,由于绝大多数的微孔已经被硅所填充,多孔碳基体剩余的孔隙主要为未被填充的介孔和大孔,这些介孔和大孔位于多孔碳基体的内部或者为闭孔,以及部分被填充硅后的介孔/微孔转化形成的微孔/更小的微孔,使得负极材料的吸附常数小于200,这样就既能够保留一定的空间来缓冲嵌脱锂时候的体积膨胀,又能够保证Si填充的量(即Si在负极材料中的比例较高)。此时,一方面使得负极材料能具有较高的比容量,另一方面使得颗粒强度较高,在制备极片辊压的过程中不会破碎。
本申请的负极材料中包含硅和多孔碳基体,且硅均匀分布在多孔碳基体的骨架中,这些多孔碳基体中的孔隙可以容纳硅,而填充硅后负极材料中剩余的孔隙可以容纳硅的体积膨胀;并且,多孔碳基体在复合硅之前,其孔隙以微孔为主(<2nm范围内),负极材料刻蚀后的材料的开口孔隙率为50%~70%,有利于硅的分散填充,在复合硅后,由于绝大多数的微孔已经被硅所填充,多孔碳基体剩余的孔隙主要为未被填充的介孔和大孔,这些介孔和大孔位于多孔碳基体的内部或者为闭孔,以及部分被填充硅后的介孔/微孔转化形成的微孔/更小的微孔,使得负极材料的吸附常数小于200。负极材料的吸附常数越小,表明负极材料中的微孔的占比越小,由此可见负极材料中主要是介孔和大孔;少量介孔和大孔可以为充放电时Si膨胀提供缓冲空间,另一方面保证了硅的应力弥散分布;在负极材料应用于锂离子电池中时,可以调控硅的填充程度,提升负极材料的比容量,还可以缓解Si的体积膨胀,提高负极材料的颗粒强度,减少极片辊压或循环过程中材料结构坍塌、破碎,从而在上述整体结构的协同作用下提升材料的循环性能、电化学性能等。
在一些实施方式中,所述负极材料刻蚀后的材料的密度为ρ1,所述负极材料的密度为ρ2,50%≤(ρ2-ρ1)/ρ1≤80%。
在上述方案中,负极材料中包含硅和多孔碳基体,且硅均匀分布在多孔碳基体的骨架中,负极材料刻蚀后的材料的密度为ρ1,负极材料的密度为ρ2,50%≤(ρ2-ρ1)/ρ1≤80%。一方面控制负极材料的吸附常数小于200,吸附常数C越小,表明负极材料中的微孔的占比越小,由此可见负极材料中主要是介孔和大孔;少量介孔和大孔可以为充放电时Si膨胀提供缓冲空间,保证了应力弥散分布;另一方面控制负极材料的密度增加范围,进而能够调控硅的填充程度,提升负极材料的比容量,还可以缓解硅的体积膨胀,提高负极材料的颗粒强度,减少极片辊压或循环过程中材料结构坍塌、破碎,可以使得负极材料在高比容量、低膨胀性能以及高循环性能之间达到平衡。
一些可选的实施方式,负极材料中的硅的粒径为1nm~100nm,具体可以是1nm、10nm、20nm、50nm、70nm、100nm或者是1nm~100nm之间的任意值。
一些可选的实施方式,负极材料刻蚀后的材料的开口孔隙率为50%~70%,具体可以是50%、52%、54%、56%、58%、60%、70%或者是50%-70%之间的任意值。
一些可选的实施方式,负极材料刻蚀后的材料的孔的孔径为0~1μm,具体可以是0.001μm、0.01μm、0.05μm、0.1μm、0.3μm、0.5μm、1μm或者是大于0且在0~1μm之间的任意值。
一些可选的实施方式,硅在多孔碳基体的孔隙中的填充度≥80%,具体可以是80%、85%、90%、95%或者是80%~100%之间的任意值。多孔碳基体填充硅后,材料密度会增加;通过控制负极材料的密度增加范围,可以使得负极材料在高比容量、低膨胀性能以及高循环性能之间达到比较好的平衡。
一些可选的实施方式,负极材料的密度为1.8g/cm3~2.3g/cm3,具体可以是1.8g/cm3、2.0g/cm3、2.2g/cm3、2.3g/cm3或者是1.8g/cm3-2.3g/cm3之间的任意值;负极材料刻蚀后的材料的密度为1g/cm3~1.5g/cm3,具体可以是1g/cm3、1.2g/cm3、1.4g/cm3、1.5g/cm3或者是1g/cm3~1.5g/cm3之间的任意值。
一些可选的实施方式,负极材料具有孔结构,孔结构包括介孔、微孔及大孔,其中,介孔在所有孔结构中的体积占比>75%,微孔在所有孔结构中的体积占比<25%,大孔在所有孔结构中的体积占比<10%。
需要说明的是,孔径为2nm-50nm的介孔的体积占比是指介孔的孔体积在整个负极材料的总孔体积的百分比,孔径为<2nm的微孔的体积占比是指微孔的孔体积在整个负极材料的总孔体积的百分比,孔径>50nm的大孔的体积占比是指大孔的孔体积在整个负极材料的总孔体积的百分比。最终制备的负极材料中的介孔和大孔占比控制在上述范围内,可以为充放电时Si膨胀提供缓冲空间,另一方面保证了应力弥散分布,提高负极材料的颗粒强度,减少极片辊压或循环过程中材料结构坍塌、破碎,从而在上述整体结构的协同作用下提升材料的循环性能、电化学性能等。
一些可选的实施方式,负极材料具有孔结构,按氮气吸附法所测定的负极材料的总孔体积<0.05cm3/g,具体可以是0.04cm3/g、0.035cm3/g、0.032cm3/g、0.030cm3/g、0.028cm3/g、0.025cm3/g、0.024cm3/g或0.02cm3/g等,在此不做限定。
一些可选的实施方式,负极材料中的闭孔的体积≤0.2cm3/g。可以理解的是,闭孔体积就是使用氮气吸附法进行测试时,氮气不可进入的体积。多孔碳基体包括闭孔,闭孔根据其孔径尺寸主要为介孔,保证了应力弥散分布,有助于容纳嵌锂时增加的体积,而不会破坏多孔碳的结构或显著增加负极材料的整体尺寸,可以进一步加强硅与碳界面的稳定性;多孔碳的闭孔一方面为嵌锂时Si体积膨胀预留了缓冲空间,另一方面因为不存在与外界相连的开口而使得电解液较难浸入,从而不存在SEI层持续增厚的问题。
一些可选的实施方式,使用气体吸附BET法进行测试后,其中负极材料刻蚀后的材料的吸附常数C值为200<C<500,具体可以200、250或300、400、499等,在此不做限定。
需要说明的是,负极材料刻蚀后的材料的吸附常数C值的计算方法与上述负极材料的吸附常数C值的计算方法一样。
在一个具体的示例中,负极材料刻蚀后的材料的粒径为1μm~50μm,优选为2μm~20μm。可以理解地,负极材料刻蚀后的材料的粒径可以是1μm、2μm、3μm、4μm、5μm、8μm、10μm、12μm、15μm、17μm、20μm、25μm、30μm、35μm、40μm、45μm或50μm。多孔碳的粒径还可以是1μm~50μm之间的其他值。
一些可选的实施方式,对负极材料进行核磁共振测试,在负极材料的29Si NMR图谱中,-10ppm~20ppm之间具有Si-C共振峰,其强度为D1,-90ppm~-110ppm之间具 有Si共振峰,其强度为D2,且D2/D1≥100。
需要说明的是,本实施例的负极材料中存在微量的SiC。由于SiC为非活性物质,当SiC的含量升高,则会导致比容量降低,当D2/D1≥100时,说明负极材料中的Si和C之间具有一定的结合力,并且Si与C之间形成了原子级别的结合力,同时晶态SiC仅存在微量,因此,本申请的负极材料能够在充放电过程中保持结构稳定性,表现出优异的循环性能。可以理解地,D2/D1可以是100、110、120、130、140或150等,在此不做限定。D2/D1的值越大,说明非活性SiC的含量越少,有利于提高负极材料电化学性能。
可以理解的是,在负极材料中虽然核磁共振结果中存在Si-C键,但Si-Si键是占主导的,其强度要远大于Si-C键的强度,因此D2/D1≥100。作为本申请的一些可选的实施方式,负极材料的最外层还包括碳包覆层。进一步优选地,碳包覆层的厚度为1nm-100nm,具体可以是1nm、10nm、20nm、50nm、70nm、100nm或者是1nm-100nm之间的任意值。
可以理解的是,引入碳包覆层主要是为了提高负极材料在负极中的电子导电性,进一步缓冲硅的体积变化以及减少负极材料表面SEI膜过度生成。
在一个具体的示例中,负极材料中硅的质量百分含量为10%~90%,优选为20%~80%。可以理解地,负极材料中硅的质量百分含量可以是10%、12%、14%、16%、18%、20%、25%、30%、35%、40%、50%、60%、70%、80%或90%。负极材料中硅的质量百分含量还可以是10%~90%之间的其他值。
在一个具体的示例中,负极材料的比表面积为0.5m2/g~50m2/g。可以理解地,负极材料的比表面积可以是0.5m2/g、1.0m2/g、5.0m2/g、10m2/g、13m2/g、16m2/g、20m2/g、23m2/g、26m2/g、30m2/g、33m2/g、36m2/g、40m2/g、43m2/g、46m2/g或50m2/g。负极材料的比表面积还可以是0.5m2/g~50m2/g之间的其他值。
在一个具体的示例中,负极材料的平均粒径D50为1μm~25μm,优选为2μm~15μm,更优选为3μm~10μm。需要解释的是,当负极材料的平均粒径≥1μm时,可以减少电极的振实密度降低从而严重影响其作为锂离子电池负极的加工性能,减少极片压实密度过低、能量密度偏低的问题,并且可以获得合适的体积比容量。此外,当负极材料的平均粒径≤25μm时,形成电极的浆料可以合适地涂布到均匀厚度。可选地,负极材料的平均粒径D50可以是1μm、2μm、3μm、4μm、5μm、6μm、7μm、8μm、9μm、10μm、12μm、14μm、15μm、17μm、19μm、21μm、23μm或25μm。负极材料的平均粒径D50还可以是1μm~25μm之间的其他值。
在一个具体的示例中,负极材料还包括位于活性物质至少部分表面的碳包覆层。可以理解的是,碳包覆层作为外壳能够机械约束活性物质,提高负极材料在负极中的电子导电性;进一步地碳包覆层允许锂离子通过,但是减少电解液与内部活性物质相互作用,进一步缓冲硅的体积变化以及减少负极材料表面SEI膜过度生成。
在一个具体的示例中,碳包覆层的厚度为1nm~100nm。可以理解地,包覆层的平均厚度可以是1nm、5nm、10nm、15nm、20nm、25nm、30nm、35nm、40nm、45nm、50nm、55nm、60nm、65nm、70nm、75nm、80nm、85nm、90nm、95nm或100nm。包覆层的平均厚度还可以是1nm~100nm之间的其他值。
第二方面,本申请还提供一种负极材料的制备方法,如图1所示,制备方法包括:
S1.将N种不同粒径尺寸的多孔碳粉与粘结剂混合、热处理,得到多孔碳基体,其中N≥2;
S2.在多孔碳基体上复合硅,得到负极材料。
本申请通过选用该制备工艺,一方面控制得到的多孔碳基体的相关物理特征,包括多孔碳基体的孔隙分布、孔隙率、孔隙形状等;另一方面控制后续硅的复合工艺,在制备得到的多孔碳基体的骨架上,通过调控工艺参数,进一步制备得到负极材料,使得负极材料中的微孔占主导,进而既缓解了电池循环过程中的体积膨胀,又确保了负极材料颗粒的强度,降低了循环过程中出现颗粒坍塌损坏的几率。
将S1中N种不同粒径尺寸的多孔碳粉按照粒径尺寸的大小,从小到大依次进行排列,再进行编号后,分别为C1、C2、C3……、CN,其中C1多孔碳粉的平均粒径尺寸是最小的,CN多孔碳粉的平均粒径尺寸是最大的。
一些可选实施方式,在相邻的两种多孔碳粉中,粒径小的多孔碳粉的D50与粒径大的多孔碳粉的D50的比值为0.25-0.9,例如C1多孔碳粉的D50粒径大小与C2多孔碳粉D50粒径大小的比值为0.25-0.9,具体可以是0.25、0.3、0.4、0.5、0.6、0.7、0.8、0.9或者是0.25-0.9之间的任意值。
一些可选实施方式,在相邻的两种多孔碳粉中,粒径小的多孔碳粉的质量与粒径大的多孔碳粉的质量的比值为0.05-0.75,例如C2多孔碳粉的质量与C3多孔碳粉质量的比值为0.05-0.75,具体可以是0.05、0.15、0.25、0.35、0.45、0.55、0.65、0.75或者是0.05-0.75之间的任意值。
一些可选实施方式,在相邻的两种多孔碳粉中,粒径大的多孔碳粉的D10不小于粒径小的多孔碳粉的D90,例如C2多孔碳粉的D10粒径大小不小于C1多孔碳粉的D90粒径大小,C3多孔碳粉的D10粒径大小不小于C2多孔碳粉的D90粒径大小。
一种优选实施方式,多孔碳基体的原料包括3种不同粒径尺寸的多孔碳粉。在这3种不同粒径尺寸的多孔碳粉中,按粒径大小由小到大依次分为C1、C2、C3。
优选地,C3:C2:C1的D50粒径大小的比值为(4~7):(2~3.5):1,具体可以是4:2:1,4:3.5:1,5:2:1、5:3.5:1、6:2:1、6:3:1,6:3.5:1,7:2:1,7:3.5:1或者是(4~7):(2~3.5):1之间的任意值。
优选地,C3:C2:C1的质量之比为(18~25):(6~12):1,具体可以是18:6:1,18:12:1,20:6:1、20:10:1、20:12:1、23:6:1,23:12:1,25:6:1,25:12:1或者是(18~25):(6~12):1之间的任意值。
优选地,C3、C2、C1的平均粒径尺寸,即D50分别为100μm~500μm、70μm~400μm、20μm~130μm。
优选地,以3种不同粒径尺寸的多孔碳粉为原料,制备得到的多孔碳基体的平均孔径为2nm~50nm,具体可以是2nm、10nm、20nm、30nm、40nm、50nm或者是2nm~50nm之间的任意值。
本申请多孔碳粉的颗粒级配优选三级级配的方法,即采用三种不同粒径尺寸的多孔碳粉作为多孔碳基体的原料。这样在多孔碳基体的成型过程中,中粒径的多孔碳颗 粒会填充在大粒径的多孔碳颗粒的空隙之间,小粒径多孔碳颗粒再进一步填充在大粒径多孔碳颗粒和中粒径多孔碳颗粒之间的孔隙。而如果只采用一种粒径的多孔碳粉原料制备多孔碳基体,这些多孔碳颗粒之间会存在较大的孔隙,即多孔碳基体的孔隙较大,后续即使硅渗透在其中时,也会影响负极材料的致密化,使制得的负极材料的孔隙率和孔隙尺寸偏高,这对复合材料的体积比容量和压实密度都有不良的影响。因此,采用多种不同粒径尺寸的多孔碳粉作为多孔碳基体的原料,有利于提高制备得到的负极材料的致密度。
一些可选的实施方式,S1中的粘结剂可以选择使用聚乙烯醇缩丁醛。
一些可选的实施方式,S1中的N种不同粒径尺寸的多孔碳粉的总质量与粘结剂的质量之比为(5~20):1,具体可以是5:1、10:1、15:1、20:1或者是(5-20):1之间的任意值。适量的粘结剂,可以把多孔碳颗粒混合粘附在一起,粘结剂过多可能会导致材料的导电性能下降,过少负极材料的颗粒稳定性下降。通过控制粘结剂的添加量,可以在提高负极材料的比容量的同时,保障多孔碳颗粒有效粘结压制在一起,提升材料的电化学性能。
一些可选的实施方式,S1中的混合的方式包括VC混合、手动混合、常温压膜、喷雾干燥中的至少一种。
一些可选的实施方式,S1中的热处理包括:将混合之后的混合物料进行加热处理、加压处理,冷却,得到多孔碳基体。
具体地,可以将进行第一混合后的混合物料平铺在模具中,再对模具进行加热处理、加压处理,冷却、脱模,得到多孔碳基体。并且混合物料平铺在模具之前,还需要在模具的内表面涂刷脱模剂,方便多孔碳基体快速脱出。
一些可选的实施方式中,模具包括钢制模具。
一些可选的实施方式中,加热处理的温度为50℃~500℃,具体可以是50℃、100℃、200℃、300℃、400℃、500℃或者50℃-500℃之间的任意值;时间为0.5h~5h,具体可以是0.5h、1h、2h、3h、4h、5h或者是0.5h~5h之间的任意值。
一些可选的实施方式中,加压处理的压力为5MPa~50MPa,具体可以是5MPa、10MPa、20MPa、30MPa、40MPa、50MPa或者是5MPa~50MPa之间的任意值。时间为0.2h~10h,具体可以是0.5h、1h、2h、3h、4h、5h或者是0.5h~5h之间的任意值。
需要说明的是,正确地选择多孔碳基体对实现硅在多孔碳基体的渗透浸润是非常关键的。如果基体的孔隙度和孔的大小太大,则硅渗透在基体中制得的复合材料的致密度较低;而如果太小,则难以将硅源气体深入地引入孔中较深的区域,以使气体在其中形成硅。因此,本申请的其中一个研究目的就是找到将硅深入引入到所使用的多孔碳基体的孔中的合适工艺参数,并使制备的复合材料在良好的机械强度与电化学性能之间存在一个正确的平衡。
一些可选的实施方式,S2中复合的方法包括:化学气相渗透法、干法混合工艺和湿法混合工艺中的任意一种,更优选为化学气相渗透法。
其中,干法混合工艺是将多孔碳基体与硅进行球磨干混,湿法混合工艺是将孔碳基体与含硅溶液进行混合。
一些可选的实施方式中,本申请复合所用的化学气相渗透法包括:将多孔碳基体 置于渗透炉内,并对渗透炉抽真空,然后加热至反应温度,通入硅源气体,进行渗透沉积。
在一些实施方式中,采用化学气相渗透法将反应气体热分解反应,使多孔碳基体的表面和/或孔隙中沉积有硅,得到负极材料。
在一些实施方式中,反应气体包括硅烷气体、氢气和惰性气体。
在一些实施方式中,反应气体包括硅烷气体,硅烷气体包括SinH(2n+2)和SinH(2n+2)Z(2n+2)-m中的至少一种,其中n≥1,m<2n+2,Z包括F、Cl、Br、I中的至少一种卤族元素。
一些可选的实施方式中,热分解的反应温度为400℃~800℃,具体可以是400℃、500℃、600℃、700℃、800℃或者400℃~800℃之间的任意值。
一些可选的实施方式中,沉积的时间为5h~500h,具体可以是5h、10h、100h、250h、500h或者是5h-500h之间的任意值。
一些可选的实施方式中,通入反应气体之前反应体系的压强为1Pa~20Pa,具体可以是1Pa、5Pa、10Pa、15Pa、20Pa或者是1Pa-20Pa之间的任意值。
一些可选的实施方式中,反应体系内的氧含量≤0.5%。
进一步地,通入反应气体之后,反应体系的总压强为0.5kPa~50kPa,具体可以是0.5kPa、1kPa、5kPa、10kPa、20kPa、30kPa、40kPa、50kPa或者是0.5kPa~50kPa之间的任意值。
一些可选的实施方式中,加热时的升温曲线包括:以1℃/min~50℃/min的升温速率,具体可以是1℃/min、10℃/min、20℃/min、30℃/min、40℃/min、50℃/min或者是1℃/min~50℃/min之间的任意值,先升到所需反应温度以下的10℃~20℃,再以0.05℃/min~0.5℃/min的升温速率继续升温至所需的反应温度,更优选以0.1℃/min的升温速率继续进行升温。
需要说明的是,提高化学气相渗透法(CVI)致密化速度的关键是保证硅烷气体进入多孔碳的孔隙之前不发生分解沉积,而进入孔隙后快速分解沉积。而提高渗透时的反应温度、增加反应性硅源气体的流量和压力,只能同时增加硅的渗透速度,使硅更容易渗透在材料的表面而不是孔隙中,因而这些常用的手段并不利于提高致密化速度。
在本申请中,为提高CVI致密化速度,首先进行抽真空,使得多孔碳基体内外的气压接近于零,然后以1℃/min-50℃/min的升温速率快速将渗透炉内的温度升温到接近气体分解的温度以下约10℃-20℃处,接着再以0.1℃/min的升温速率缓慢升温到气体的分解温度,从而保证了多孔碳基体内外温度保持一致,保证了热力学条件的稳定。然后再向渗透炉内通入H2以及氩气等惰性气体稀释后的硅烷气体,这样可以保证硅烷气体在多孔碳内部的均匀扩散,有利于其均匀渗透。
一些可选的实施方式中,进行渗透沉积还包括:当硅源气体从多孔碳基体的前端流向末端时,采用可移动加热线圈对多孔碳基体的末端加热至气体的反应温度,使硅源气体在末端处的多孔碳基体上发生致密化反应,进行渗透沉积;之后将可移动加热线圈从末端逐渐移动至前端,使多孔碳基体的每一部分发生致密化渗透沉积。
可以理解的是,采用可移动的线圈在渗透炉内对多孔碳基体进行加热渗透沉积的方式,尽可能保证了多孔碳基体上的每一部分都能发生致密化反应,使得最终制备得 到的负极材料致密度高且多孔碳基体上能均匀分布有硅。
一些可选的实施方式中,氢气与硅烷气体的摩尔比为(5~20):1,具体可以是5:1、10:1、15:1、20:1或者是(5~20):1之间的任意值。可以理解的是,在硅源气体中,氩气主要是稀释气体,而氢气一方面是稀释气体,一方面也是载气。
一些可选的实施方式中,作为稀释气体的氢气和作为载气的氢气的气流量之比为(3~10):1,具体可以是3:1、5:1、8:1、10:1或者是(3~10):1之间的任意值。
一些可选的实施方式中,氢气的气流量为100mL/min~500mL/min,具体可以是100mL/min、200mL/min、300mL/min、400mL/min、500mL/min或者是100mL/min~500mL/min之间的任意值。
一些可选的实施方式中,氩气的气流量为200mL/min~500mL/min,具体可以是200mL/min、300mL/min、400mL/min、500mL/min或者是200mL/min~500mL/min之间的任意值。
一些可选的实施方式中,进行渗透沉积结束后,还包括:停止通电和通入硅源气体,关闭抽真空所用的真空系统,并且向渗透炉内持续通入氩气,直至渗透炉内的压力为常压,再打开放气阀,使得渗透炉的温度冷却至室温,然后停止通入氩气,取出制备得到的产物。
需要说明的是,通过化学气相渗透的方法制备得到的负极材料,其孔隙率大约为10%-15%,其中硅弥散分布并镶嵌在多孔碳基体中。
一些实施方式中,方法还包括:使用固相碳包覆处理、液相碳包覆处理或气相碳包覆处理的方法,将复合之后制备得到的中间产物与碳源进行包覆处理。
一些实施方式中,包覆处理包括以下步骤:将中间产物与碳源混合,在保护性气氛中,控制碳源热裂解以在中间产物的表面形成碳包覆层。
一些实施方式中,碳源包括气相碳源。
一些实施方式中,碳源包括气相碳源,气相碳源包括气相烃类碳源。
一些实施方式中,碳源包括气相碳源,气相碳源包括甲烷、乙炔、乙烯、乙烷、丙烷、丙烯、丙炔、丙酮和苯中的至少一种。
一些实施方式中,碳源包括固相碳源。
一些实施方式中,碳源包括固相碳源,固相碳源包括固相有机碳源。
一些实施方式中,碳源包括固相碳源,固相碳源包括柠檬酸、葡萄糖、沥青、酚醛树脂和糠醛树脂中的至少一种。
一些实施方式中,碳源包括液相碳源。
一些实施方式中,碳源包括液相碳源,液相碳源包括液相有机碳源。
一些实施方式中,碳源包括液相碳源,液相碳源包括正己烷、甲苯、苯、二甲苯、甲醇、乙醇、丙醇、丁醇、戊醇、丙酮、丁酮、2-戊酮、乙酸甲酯、乙酸乙酯、乙酸丙酯、乙酸丁酯和乙酸戊酯中的至少一种。
一些实施方式中,热裂解的温度为600℃~1200℃。
一些实施方式中,热裂解的升温速率为0.1℃/min~50℃/min。
本申请制备得到的负极材料可以作为负极材料,应用于锂离子电池中。具体的,将负极材料用于锂离子电池后,其首次可逆比容量≥2000mAh/g,循环50周后膨胀率 <38%,容量保持率>87%。根据原位XRD数据显示,将负极材料初始放电至0.05V vs Li/Li+时,一直存在(111)、(220)、(311)的硅特征峰;0.01V vs Li/Li+时,负极材料中则会出现c-Li15Si4峰。根据原位TEM和选区电子衍射显示,硅的表层被锂化形成LixSi,内部是晶体硅。循环一周后,硅表面的LixSi脱锂形成了非晶Si(a-Si),内部仍然是晶体硅。
本申请对使用三种不同粒径尺寸的多孔碳粉制备得到的多孔碳基体进行吸附脱附测试,其吸脱附曲线表现为I型,此时表现为典型的Langmuir等温线(包括孔宽小于1nm的狭窄微孔材料和孔宽小于2.5nm的含有较窄介孔材料的混合物);而制备得到的负极材料的脱吸附曲线为IV(a)型,即毛细管凝聚后伴随回滞环(这是典型介孔类材料的脱吸附曲线)。。
在研究本申请的负极材料及其制备方法的过程中,发明人通过以下测试方法来测试制备得到的多孔碳基体以及负极材料,具体如下:
孔隙率可通过计算材料的每单位重量的孔的量(cm3/g)与体密度(g/cm3)的乘积来获得。其中,可通过将材料的质量除以样本的体积来获得(体)密度;每单位重量的孔的量可进一步在所熟知的条件下,使用常规设备或水银孔率计(mercury porosimeter)测量。
渗透炉中的氧含量可使用氧/一氧化碳计Bacharach型号0024-7341来进行测试。
使用SEM来确认材料中的颗粒结构,同时结合EDS可以对材料中Si、O、C的元素比例进行表征分析,确定材料中的物相成分。
使用激光粒度仪测试材料粒径的D50,D90和D10,再计算得到(D90-D10)/D50的值,确保材料粒径存在类正态分布的对称分布。其中,在体积基准分布中,累积10%直径为D10,累积50%直径为D50,累积90%直径为D90。
使用美国麦克TriStar3000比表面积与孔径分析仪设备测试材料的比表面积。
使用帕那科X’pert Pro X射线衍射仪得到材料的XRD峰,接着使用Jade 6.5软件对于XRD中的Si峰进行拟合,从而得到硅微晶尺寸。
采用29Si MAS NMR标准硅结构化学位移:29Si MAS NMR(29Si Magic Angle Spinning Nuclear Magnetic Resonance Spectroscopy),仪器型号为Bruker AV 300型核磁共振共振仪。为了定量分析,在测试过程中使用单脉冲,而不是用交叉极化的方法。脉冲宽度为4.5ut,θ为54.7°,驰豫延迟(即两次采样的时间延迟)为5秒,转速为7kHz。以TMS为化学位移标准进行测定。
SEM或TEM图片测量硅颗粒粒径:保存负极材料的SEM照片或TEM照片。运行Nano Measurer软件,打开需要统计的SEM或TEM图片,设置标尺后拖动鼠标在图上标示颗粒,得到其粒径。随机选取五个100um*75um的区域,对每个区域内随机选取20个纳米硅进行粒径统计,得到其粒径分布范围。用origin软件对得到的粒度值进行正态分布拟合,求得平均值和标准差,标准差≤0.2。
重量法测试硅含量:用箱式气氛炉在O2氛围下灼烧,使样品中硅反应成为SiO2,C燃烧后变为CO2排出,称重计算硅含量。
C值和比表面积、孔容测试方法:使用Micromeretics ASAP 2460进行微孔和介孔分析。液氮温度下,物体表面氮气的平衡吸附量与其孔径等特性相关,结合吸附过程中吸附量随相对压力变化的规律,可拟合多种模型进行孔径的计算。软件产生的报告 利用密度泛函理论(简写为DFT)方法计算孔径分布、总孔体积和在一定范围内的孔体积。
负极材料刻蚀后的材料的开口孔隙率的测试方法:称取0.5g左右的负极材料样品置于铂金坩埚中,加入5mL HNO3和10mL HF的混合酸,待混合酸与样品反应稳定后,将铂金坩埚置于350℃电热板上加热赶酸,直至氢氟酸挥发,不冒白烟;待坩埚冷却后,再加入6mL的HCl,加热至残留物完全溶解,剩下的即为刻蚀后的负极材料。
开口孔隙率指样品中开口孔的体积与样品的总体积之比,开口孔指的是具有一个开放边缘的孔隙,可以与环境中的液体或气体相连通。在实际应用中,开口孔隙率通常用语描述如多孔介质、过滤材料和磁性材料等材料的性质和性能。
开口孔隙率的测量通常采用气体浸渗法和液体移位法等方法。其中,气体浸渗法用于测量开口孔的平均直径和孔体积,然后通过计算公式求得开口孔隙率。液体移位法则通过浸入液体来测量开口孔的体积,同样可以得到开孔孔隙率。
闭口孔隙率是指样品中闭合孔的体积与样品的总体积之比。闭口孔指的是具有闭合边缘的孔隙,不与环境中的液体或气体相连通,通常一般应用于地质勘探等领域。
闭口孔隙率的测量通常采用密度法和氦气测量法等方法:例如取体积为V1的无水乙醇至量筒,将干燥物料浸入其中5min,真空抽气至乙醇中无气泡,记录此时乙醇体积为V2;取出物料,记录此时体积为V3。计算孔隙率:(V1-V3)/(V2-V3)*100%。每组测定3个样品,取均值。
硅的填充度测试方法:测定负极材料刻蚀后的材料的真密度为ρ1,比孔容为V1,则表观密度ρ2=V1+1/ρ1,C材料孔隙率θ1=1-ρ2/ρ1,测定负极材料的真密度为ρ3,比孔容为V2,则表观密度ρ4=V2+1/ρ3,C材料孔隙率θ2=1-ρ4/ρ3,则硅的填充率为(θ2-θ1)/θ1,孔容测试方法在比表面积测试中已补充,不再赘述。
真密度测试方法:使用贝士德3H-2000TD/康塔5200e的真密度仪,应用气体驱替的阿基米德原理(密度=质量/体积),利用小分子直径的惰性气体在一定条件下的玻尔定律(PV=nRT),精确测量被测材料的真实体积,从而得到其真密度。
锂离子电池性能测试:按照负极材料、导电炭黑Super-P(5)+导电石墨SFG-6(10)、丙烯腈多元共聚物的水分散液(LA133水性粘结剂)质量比为75:15:10的比例调制负极浆料,在铜箔上涂布,干燥后制成负极极片。以金属锂片作为对电极,在充满Ar气的手套箱中组装成扣式电池。以0.1C的电流密度,在0.01-5V的充放电区间内对扣式电池进行充放电测试,得到该扣式电池的首次可逆比容量和ICE。
按照负极材料与石墨的混合物,导电炭黑Super-P,导电炭黑KS-6,羧甲基纤维素钠CMC,丁苯橡胶SBR质量比为92:2:2:2:2调制成负极浆料,在铜箔上涂布,干燥后制成负极极片。其中负极材料与石墨的混合物中负极材料和石墨的占比由两者的首次可逆比容量及两者所需配成的容量决定。以金属锂片作为对电极,在充满Ar气的手套箱中组装成扣式电池。以1C的电流密度,在0.01V-5V的充放电区间对扣式电池进行重复50次的充放电测试,得到电池循环50圈后的容量保持率和极片厚度膨胀率。
下面将结合具体实施例对本发明的实施方案进行详细描述,但是本领域技术人员将会理解,下列实施例仅用于说明本发明,而不应视为限制本发明的范围。实施例中 未注明具体条件者,按照常规条件或制造商建议的条件进行。所用试剂或仪器未注明生产厂商者,均为可以通过市售购买获得的常规产品。
实施例1
本实施例提供一种负极材料,其具体制备方法包括:
(1)按质量百分比,将65%的D50=150μm的多孔碳,22%的D50=80μm的多孔碳,3%的D50=30μm多孔碳,10%的聚乙烯醇缩丁醛酯,进行VC混合;
(2)将钢制模具的工作面上贴一层聚四氟乙烯纸,再将模具的内表面均匀涂刷上二甲基硅油,然后将步骤(1)混合好的粉料平铺倒入模具内。再将模具放入烘箱中200℃加热1h,最后在压机上对模具施加10MPa的压力,得到多孔碳基体;
(3)将多孔碳基体装入CVI渗透炉内,对CVI渗透炉抽真空,以排空炉内的空气,当炉内压力达到1Pa时停止抽真空;
(4)将CVI渗透炉通电并以8℃/min的升温速率升至400℃,再以0.1℃/min的升温速率升温到420℃。重新开启真空系统,对炉内抽真空至1Pa,接着从立式CVI炉的底部向顶部方向通入硅烷与H2和Ar的混合气体,H2气流量为180mL/min,Ar流量为300mL/min,H2与硅烷的摩尔比为12;稀释H2与载气H2的流量比为5;
(5)调节真空泵抽速,将CVI炉内的渗透压力控制在0.5kPa,渗透时间为60h。此时感应线圈先加热距炉体顶部25%工作区间的范围,当反应时间为36h后,逐步下移使得整个多孔碳基体完成致密化过程,复合材料的孔隙率为13%;
(6)CVI化学气相致密化处理完成后停止通电和反应气体,关闭真空系统,将Ar气通入CVI炉内至压力为常压时打开放气阀,待CVI炉内温度冷却至室温后停止通入Ar气;
(7)将材料取出,用乙醇超声清洗30min,并置于80℃烘干,得到负极材料,其中,硅的尺寸为2-100nm。
实施例2
本实施例提供一种负极材料,其具体制备方法包括:
(1)按质量百分比,将63%的D50=250μm的多孔碳,26.5%的D50=190μm的多孔碳,3.5%的D50=60μm多孔碳,7%的PVB,VC混合;
(2)将钢制模具的工作面上贴一层聚四氟乙烯纸,再将模具的内表面均匀涂刷上二甲基硅油,然后将混合好的粉料平铺倒入模具内。再将模具放入烘箱中150℃加热2h,最后在压机上对模具施加20MPa的压力,得到多孔碳基体;
(3)将多孔碳基体装入CVI炉内,对CVI炉抽真空,以排空CVI炉内的空气,当CVI炉内压力达到5Pa时停止抽真空;
(4)将CVI炉通电并以6℃/min的升温速率升温至400℃,以0.1℃/min的升温速率升温到420℃。重新开启真空系统抽真空至6Pa,接着从立式CVI炉的底部向顶部方向通入硅烷与H2和Ar的混合气体,H2气流量为350mL/min,Ar流量为380mL/min,H2与硅烷的摩尔比为3,稀释H2与载气H2的流量比为8;
(5)调节真空泵抽速,将CVI炉内的渗透压力控制在5kPa,渗透时间为80h。此时感应线圈先加热距炉体顶部25%工作区间的范围,当反应时间为36h后,逐步下移使得整个多孔碳基体完成致密化过程,复合材料的孔隙率为12%;
(6)CVI化学气相致密化处理完成后停止通电和反应气体,关闭真空系统,将Ar气通入CVI炉内至压力为常压时打开放气阀,待CVI炉内温度冷却至室温后停止通入Ar气;
(7)将复合材料取出,用无水乙醇超声清洗35min后置于100℃干燥箱中烘干,得到负极材料,其中,硅的尺寸为5-80nm。
实施例3
本实施例提供一种负极材料,其具体制备方法包括:
(1)按质量百分比,将65%的D50=370μm的多孔碳,24%的D50=250μm的多孔碳,3%的D50=90μm多孔碳,8%的PVB,VC混合;
(2)将钢制模具的工作面上贴一层聚四氟乙烯纸,再将模具的内表面均匀涂刷上二甲基硅油,然后将混合好的粉料平铺倒入模具内。再将模具放入烘箱中250℃加热0.5h,最后在压机上对模具施加25MPa的压力,得到多孔碳基体;
(3)将多孔碳基体装入CVI炉内,对CVI炉抽真空,以排空CVI炉内的空气,当沉积炉内压力达到5Pa时停止抽真空;
(4)将CVI炉通电并以10℃/min的升温速率升至400℃,以0.2℃/min的升温速率升温到450℃。重新开启真空系统,对炉内抽真空至至10Pa,接着从立式CVI炉的底部向顶部方向通入硅烷与H2和Ar的混合气体,H2气流量为300mL/min,Ar流量为380mL/min,H2与硅烷的摩尔比为4,稀释H2与载气H2的流量比为8;
(5)调节真空泵抽速,将CVI炉内的沉积压力控制在2.5kPa,渗透时间为300h。此时感应线圈先加热距炉体顶部25%工作区间的范围,当反应时间为36h后,逐步下移使得整个多孔碳基体完成致密化过程,复合材料的孔隙率为15%;
(6)CVI化学气相致密化处理完成后停止通电和反应气体,关闭真空系统,将Ar气通入CVI炉内至压力为常压时打开放气阀,待CVI炉内温度冷却至室温后停止通入Ar气;
(7)将复合材料取出,用乙醇超声清洗60min后置于干燥箱中90℃烘干,得到负极材料,其中,硅的尺寸为10-90nm。
实施例4:
本实施例提供一种负极材料,其具体制备方法包括:
(1)按质量百分比,将64%的D50=500μm的多孔碳,27%的D50=350μm的多孔碳,3%的D50=120μm多孔碳,6%的PVB,VC混合;
(2)将钢制模具的工作面上贴一层聚四氟乙烯纸,再将模具的内表面均匀涂刷上二甲基硅油,然后将混合好的粉料平铺倒入模具内。再将模具放入烘箱中350℃加热3h,最后在压机上对模具施加5MPa的压力,得到多孔碳基体;
(3)将多孔碳基体装入CVI炉内,对CVI炉抽真空,以排空CVI炉内的空气,当CVI炉内压力达到5Pa时停止抽真空;
(4)将CVI炉通电并以8℃/min的升温速率升至420℃,以0.1℃/min的升温速率升温到450℃。重新开启真空系统抽真空至10Pa,接着从立式CVI炉的底部向顶部方向通入硅烷与H2和Ar的混合气体,H2气流量为300mL/min,Ar流量为380mL/min,H2与硅烷的摩尔比为2.5,稀释H2与载气H2的流量比为10;
(5)调节真空泵抽速,将CVI炉内的沉积压力控制在0.9kPa,渗透时间为60h。此时感应线圈先加热距炉体顶部25%工作区间的范围,当反应时间为40h后,逐步下移使得整个多孔碳集体完成致密化过程。复合材料的孔隙率为15%;
(6)CVI化学气相致密化处理完成后停止通电和反应气体,关闭真空系统,将Ar气通入CVI炉内至压力为常压时打开放气阀,待CVI炉内温度冷却至室温后停止通入Ar气;
(7)将复合材料取出,用乙醇超声清洗30min后置于干燥箱中100℃烘干,得到负极材料,其中,硅的尺寸为20-90nm。
实施例5
本实施例提供一种负极材料,其具体制备方法包括:
(1)按质量百分比,将63.5%的D50=300μm的多孔碳,24%的D50=235μm的多孔碳,3.5%的D50=75μm多孔碳,9%的PVB,VC混合;
(2)将钢制模具的工作面上贴一层聚四氟乙烯纸,再将模具的内表面均匀涂刷上二甲基硅油,然后将混合好的粉料平铺倒入模具内。再将模具放入烘箱中280℃加热2h,最后在压机上对模具施加30MPa的压力,得到多孔碳基体;
(3)将多孔碳基体装入CVI炉内,对CVI炉抽真空,以排空CVI炉内的空气,当CVI炉内压力达到5Pa时停止抽真空;
(4)将CVI炉通电并以10℃/min的升温速率升至420℃,以0.1℃/min的升温速率升温到440℃。重新开启真空系统抽真空至5Pa,接着从立式CVI炉的底部向顶部方向通入硅烷与H2和Ar的混合气体,H2气流量为320mL/min,Ar流量为360mL/min,H2与硅烷的摩尔比为2.5,稀释H2与载气H2的流量比为5;
(5)调节真空泵抽速,将CVI炉内的渗透压力控制在1.1kPa,渗透时间为300h。此时感应线圈先加热距炉体顶部25%工作区间的范围,当反应时间为36h后,逐步下移使得整个多孔碳基体完成致密化过程,复合材料的孔隙率为13%;
(6)CVI化学气相致密化处理完成后停止通电和反应气体,关闭真空系统,将Ar气通入CVI炉内至压力为常压时打开放气阀,待CVI炉内温度冷却至室温后停止通入Ar气;
(7)将复合材料取出,用乙醇超声清洗70min后置于干燥箱中100℃烘干,得到负极材料,其中,硅的尺寸为20-70nm。
对比例1
本实施例提供一种负极材料,其具体制备方法包括:
按质量百分比,将90%的D50=100μm的多孔碳和10%的PVB进行VC混合;
后续步骤与实施例1相同。
对比例2
本实施例提供一种负极材料,其具体制备方法包括:
按质量百分比,将50%的D50=100μm的多孔碳,40%的D50=80μm的多孔碳,10%的PVB,VC混合;
后续步骤与实施例1相同。
对比例3
本实施例提供一种负极材料,其具体制备方法包括:
按质量百分比,将60%的D50=800μm的多孔碳,25%的D50=60μm的多孔碳,5%的D50=30μm多孔碳,10%的PVB,VC混合;
后续步骤与实施例1相同。
对比例4
本实施例提供一种负极材料,其具体制备方法包括:
按质量百分比,将60%的D50=100μm的多孔碳,25%的D50=90μm的多孔碳,5%的D50=30μm多孔碳,10%的PVB,VC混合;
后续步骤与实施例1相同。
对比例5
本实施例提供一种负极材料,其具体制备方法包括:
按质量百分比,将60%的D50=100μm的多孔碳,25%的D50=60μm的多孔碳,5%的D50=10μm多孔碳,10%的PVB,VC混合;
后续步骤与实施例1相同。
对比例6
本对比例采用质量占比90%的D50=50μm的多孔碳,10%的PVB,VC混合;
后续步骤与实施例1相同。
根据上述使用的测试方法,将实施例1-5和对比例1~6制备的负极材料作为负极材料用于锂离子电池中,得到如表1和表2的测试数据。
表1.实施例的负极材料的性能参数

表2.实施例与对比例的负极材料的性能参数
分析表1和表2的数据,可以发现:通过使用本申请技术方案中制备的多孔碳基体以及相关CVI化学气相渗透处理的工艺,最终制备的负极材料的致密度更高、更均匀,且硅能深入到多孔碳基体的孔中。
比较实施例1和对比例1~6,说明需要控制好材料中各种多孔碳的比例,否则会导致材料中的孔隙分布并不合理,渗进去的硅含量偏少,导致最终负极材料孔体积(微孔、介孔)的占比过多,负极材料的C值偏高,影响材料的颗粒强度(辊压过程中容易破碎);硅晶粒偏聚和长大,材料的循环性能下降。
最后应说明的是:以上各实施例仅用以说明本发明的技术方案,而非对其限制;尽管参照前述各实施例对本发明进行了详细的说明,本领域的普通技术人员应当理解:其依然可以对前述各实施例所记载的技术方案进行修改,或者对其中部分或者全部技术特征进行等同替换;而这些修改或者替换,并不使相应技术方案的本质脱离本发明各实施例技术方案的范围。
此外,本领域的技术人员能够理解,尽管在此的一些实施例包括其它实施例中所 包括的某些特征而不是其它特征,但是不同实施例的特征的组合意味着处于本发明的范围之内并且形成不同的实施例。例如,在上面的权利要求书中,所要求保护的实施例的任意之一都可以以任意的组合方式来使用。公开于该背景技术部分的信息仅仅旨在加深对本发明的总体背景技术的理解,而不应当被视为承认或以任何形式暗示该信息构成已为本领域技术人员所公知的现有技术。

Claims (10)

  1. 一种负极材料,其特征在于,所述负极材料包括活性物质,所述活性物质包括多孔碳基体和硅,所述多孔碳基体的孔隙和/或表面分布有所述硅;负极材料的吸附常数C值为C<200,所述负极材料刻蚀后的材料的开口孔隙率为50%~70%。
  2. 一种负极材料,其特征在于,所述负极材料包括活性物质,所述活性物质包括多孔碳基体和硅,所述多孔碳基体的孔隙和/或表面分布有所述硅;负极材料的吸附常数C值为C<200,所述负极材料刻蚀后的材料的密度为ρ1,所述负极材料的密度为ρ2,50%≤(ρ2-ρ1)/ρ1≤80%。
  3. 如权利要求1或2所述的负极材料,其特征在于,满足以下条件中的至少一个:
    (1)所述硅的粒径为1nm~100nm;
    (2)所述负极材料刻蚀后的材料硅的孔的孔径为0~1μm;
    (3)所述硅在所述多孔碳基体中的填充度≥80%;
    (4)所述负极材料的密度为1.8g/cm3~2.3g/cm3,所述负极材料刻蚀后的材料的密度为1g/cm3~1.5g/cm3
    (5)所述负极材料具有孔结构,所述孔结构包括介孔、微孔及大孔,其中,所述介孔在所有孔结构中的体积占比>75%,所述微孔在所有孔结构中的体积占比<25%,所述大孔在所有孔结构中的体积占比<10%;
    (6)所述负极材料具有孔结构,按氮气吸附法所测定的所述负极材料的总孔体积<0.05cm3/g;
    (7)所述负极材料中的闭孔的体积≤0.2cm3/g;
    (8)所述负极材料刻蚀后的材料的吸附常数C值为200<C<500;
    (9)所述负极材料的核磁共振测试中,-10ppm~20ppm之间具有Si-C共振峰,其强度为D1,-90ppm~110ppm之间具有Si-Si共振峰,其强度为D2,且D2/D1≥100;
    (10)所述负极材料刻蚀后的材料的粒径为1μm~50μm;
    (11)所述硅包括纳米硅。
  4. 如权利要求1-3任一项所述的负极材料,其特征在于,所述负极材料还包括位于所述活性物质至少部分表面的碳包覆层。
  5. 如权利要求4所述的负极材料,其特征在于,满足以下条件中的至少一个:
    (1)所述碳包覆层的厚度为1nm-100nm;
    (2)所述负极材料中硅的质量百分含量为10%~90%;
    (3)所述负极材料的比表面积为0.5m2/g~50m2/g;
    (4)所述负极材料的平均粒径为1μm~25μm。
  6. 一种负极材料的制备方法,其特征在于,包括:
    将N种不同粒径尺寸的多孔碳粉与粘结剂混合、热处理,得到多孔碳基体,其中N≥2;
    在所述多孔碳基体上复合硅,得到所述负极材料。
  7. 如权利要求6所述的制备方法,其特征在于,按照粒径尺寸的大小,将所述N 种不同粒径尺寸的多孔碳粉从小到大依次进行排列,所述多孔碳粉满足以下条件中的至少一个:
    (1)在相邻的两种所述多孔碳粉中,粒径小的所述多孔碳粉的D50与粒径大的所述多孔碳粉的D50的比值为0.25~0.9;
    (2)在相邻的两种所述多孔碳粉中,粒径小的所述多孔碳粉的质量与粒径大的所述多孔碳粉的质量的比值为0.05~0.75;
    (3)在相邻的两种所述多孔碳粉中,粒径大的所述多孔碳粉的D10不小于粒径小的所述多孔碳粉的D90;
    (4)当N=3时,大尺寸的所述多孔碳粉:中间尺寸的所述多孔碳粉:小尺寸的所述多孔碳粉的D50之比为(4~7):(2~3.5):1;
    (5)当N=3时,大尺寸的所述多孔碳粉:中间尺寸的所述多孔碳粉:小尺寸的所述多孔碳粉的质量之比为(18~25):(6~12):1;
    (6)当N=3时,大尺寸的所述多孔碳粉、中间尺寸的所述多孔碳粉、小尺寸的所述多孔碳粉的D50分别为100μm~500μm、70μm~400μm、20μm~130μm;
    (7)当N=3时,三种不同粒径尺寸的所述多孔碳粉制备得到的所述多孔碳基体的平均孔径为2nm~50nm;
    (8)所述粘结剂包括聚乙烯醇缩丁醛;
    (9)所述N种不同粒径尺寸的多孔碳粉的质量与所述粘结剂的质量比为(5-20):1。
  8. 如权利要求6所述的制备方法,其特征在于,所述热处理包括:将所述混合之后的混合物料进行加热处理、加压处理,冷却,得到所述多孔碳基体。
  9. 如权利要求6所述的制备方法,其特征在于,采用化学气相渗透法将反应气体热分解反应,使多孔碳基体的表面和/或孔隙中沉积有硅,得到负极材料。
  10. 一种锂离子电池,其特征在于,其原料包括权利要求1-5任一项所述的负极材料或者权利要求6-9任一项的制备方法制备得到的负极材料。
PCT/CN2023/128230 2022-12-28 2023-10-31 负极材料及其制备方法和锂离子电池 Ceased WO2024139653A1 (zh)

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