WO2024255490A1 - 生长高质量碳化硅晶体的装置、方法及碳化硅晶体 - Google Patents

生长高质量碳化硅晶体的装置、方法及碳化硅晶体 Download PDF

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Publication number
WO2024255490A1
WO2024255490A1 PCT/CN2024/091967 CN2024091967W WO2024255490A1 WO 2024255490 A1 WO2024255490 A1 WO 2024255490A1 CN 2024091967 W CN2024091967 W CN 2024091967W WO 2024255490 A1 WO2024255490 A1 WO 2024255490A1
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WIPO (PCT)
Prior art keywords
crucible
silicon carbide
chamber
crystal
guide plate
Prior art date
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Ceased
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PCT/CN2024/091967
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English (en)
French (fr)
Inventor
林育仪
刘曦
冯春林
徐红立
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Tongwei Microelectronics Co Ltd
Original Assignee
Tongwei Microelectronics Co Ltd
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Publication date
Application filed by Tongwei Microelectronics Co Ltd filed Critical Tongwei Microelectronics Co Ltd
Priority to EP24768886.4A priority Critical patent/EP4506492A4/en
Priority to KR1020247032669A priority patent/KR102894247B1/ko
Priority to JP2024556706A priority patent/JP7781481B2/ja
Publication of WO2024255490A1 publication Critical patent/WO2024255490A1/zh
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

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Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B23/00—Single-crystal growth by condensing evaporated or sublimed materials
    • C30B23/002—Controlling or regulating
    • C30B23/005—Controlling or regulating flux or flow of depositing species or vapour
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B23/00—Single-crystal growth by condensing evaporated or sublimed materials
    • C30B23/002—Controlling or regulating
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B23/00—Single-crystal growth by condensing evaporated or sublimed materials
    • C30B23/02—Epitaxial-layer growth
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/36—Carbides

Definitions

  • the present invention relates to the field of silicon carbide crystal growth, and in particular to a device and method for growing high-quality silicon carbide crystals and the silicon carbide crystals.
  • silicon carbide is widely used in power electronics, radio frequency devices, optoelectronic devices and other fields due to its excellent properties such as large bandgap, high saturated electron mobility, strong breakdown field and high thermal conductivity.
  • a guide plate is generally provided in the middle and upper part of the crucible to guide the gas phase crystal growth component (mainly Si m C n , i.e., carbon silicon component) to flow to the seed crystal as much as possible.
  • the gas phase crystal growth component mainly Si m C n , i.e., carbon silicon component
  • a gap is usually reserved between the top of the guide plate and the edge of the seed crystal, and the gap will cause a certain pressure difference between the chamber above the guide plate and the chamber below the guide plate in the early stage of silicon carbide crystal growth, so that the gas phase crystal growth component has a fast flow rate and a large flow rate at the gap, which leads to an excessively fast growth rate at the edge of the seed crystal and the appearance of a "concave interface", affecting the growth quality of the silicon carbide crystal.
  • the objects of the present invention include, for example, providing a device, method and silicon carbide crystal for growing high-quality silicon carbide crystals, which can effectively reduce the flow rate of the gas phase crystal growth component in the gap between the top of the guide plate and the edge of the seed crystal, so that the silicon carbide crystal can grow uniformly in all parts of the seed crystal, thereby improving the growth quality of the silicon carbide crystal.
  • the present invention provides an apparatus for growing high-quality silicon carbide crystals, comprising:
  • a crucible the top wall of which is provided with a seed crystal for growing silicon carbide crystals
  • the pressure equalizing structure includes an air hole opened on the annular guide plate, and the air hole connects the first chamber and the second chamber.
  • the plurality of air holes are arranged in multiple circles around the axis of the crucible, the multiple circles of air holes are spaced apart in the radial direction of the crucible, and any two adjacent circles of air holes are staggered in the radial direction of the crucible.
  • the annular guide plate includes a first annular portion and a second annular portion connected at an angle, an end of the first annular portion away from the second annular portion is connected to the inner wall of the crucible, an end of the second annular portion away from the first annular portion extends toward the seed crystal, and the pore is opened in the first annular portion.
  • the first annular portion is flat and perpendicular to the axis of the crucible, the outer circumferential wall of the first annular portion is connected to the side wall of the crucible, the second annular portion is hollow cylindrical or hollow frustum, the bottom end of the second annular portion is connected to the inner circumferential wall of the first annular portion, and the top end extends toward the seed crystal.
  • the pores are arranged to be inclined toward the seed crystal.
  • the pressure equalization structure includes silicon carbide powder placed in the second chamber.
  • At least one concentration adjusting through hole is provided on the crucible at the periphery of the second chamber.
  • the first annular portion includes a plurality of sub-annular portions distributed vertically, and the pores are distributed on each sub-annular portion.
  • the crucible is evacuated and then filled with an inert gas
  • the crucible is evacuated again to reduce the pressure inside the crucible to 0.01-4E3Pa;
  • the silicon carbide powder sublimates and begins to grow silicon carbide crystals on the seed crystals;
  • the crucible is refilled with inert gas to increase the pressure inside the crucible to 5E3-1E5Pa;
  • the heating of the crucible is stopped, and after the temperature inside the crucible drops to room temperature, the silicon carbide crystal is taken out of the crucible.
  • the annular guide plate, the seed crystal, the side wall of the crucible, and the bottom wall of the crucible together form a first chamber
  • the annular guide plate, the seed crystal, the side wall of the crucible and the top wall of the crucible together form a second chamber
  • the first chamber and the second chamber are connected through the gap.
  • a pressure equalizing structure for balancing the pressure of the first chamber and the second chamber is arranged on the annular guide plate.
  • the flow rate of the gas phase crystal growth component in the gap between the top of the annular guide plate and the edge of the seed crystal can be effectively reduced, so that the growth rate of the silicon carbide crystal at the edge of the seed crystal is as similar as possible to the growth rate of the silicon carbide crystal in the center of the seed crystal, thereby avoiding defects such as "concave interface" in the silicon carbide crystal on the seed crystal and improving the growth quality of the silicon carbide crystal.
  • the method for growing high-quality silicon carbide crystals adopts the above-mentioned device, and the silicon carbide crystals prepared therefrom have the characteristics of few defects and high quality.
  • FIG1 is a schematic structural diagram of an apparatus for growing high-quality silicon carbide crystals provided by a first embodiment of the present invention
  • FIG2 is a schematic structural diagram of an annular guide plate provided in a first embodiment of the present invention.
  • FIG. 3 is a schematic diagram of the structure of an apparatus for growing high-quality silicon carbide crystals provided by a second embodiment of the present invention.
  • FIG4 is a schematic structural diagram of an apparatus for growing high-quality silicon carbide crystals provided in a fifth embodiment of the present invention.
  • FIG. 5 is a schematic structural diagram of an apparatus for growing high-quality silicon carbide crystals provided by a sixth embodiment of the present invention.
  • Icons 100-crucible; 102-first chamber; 104-second chamber; 106-gap; 108-concentration adjustment hole; 110-seed crystal; 200-annular guide plate; 210-first annular portion; 212-air hole; 214-sub-annular portion; 220-second annular portion; 222-rounded corners; 300-silicon carbide powder; 400-silicon carbide crystal.
  • This gap will cause a certain pressure difference between the chamber above the guide plate and the chamber below the guide plate in the early stage of silicon carbide crystal growth, and this pressure difference will cause the flow rate of the gas phase crystal growth component in the gap to be very high, that is, the flow rate of the gas phase crystal growth component at the edge of the seed crystal is much higher than the flow rate at the center of the seed crystal, which will inevitably lead to the growth rate of the silicon carbide crystal at the edge of the seed crystal being much higher than the growth rate at the center of the seed crystal, causing the silicon carbide crystal to be prone to defects such as "concave interface", which seriously affects the growth quality of the silicon carbide crystal.
  • the present invention provides a device and method for growing high-quality silicon carbide crystals.
  • a pressure equalizing structure on the guide plate in the crucible, the pressure in the upper and lower chambers of the guide plate in the crucible can be effectively balanced, and the pressure difference between the two chambers can be effectively reduced, thereby effectively reducing the flow rate of the gas phase crystal growth component in the gap between the top of the guide plate and the edge of the seed crystal, so that the growth rate of the silicon carbide crystal at the edge of the seed crystal is as similar as possible to the growth rate at the center of the seed crystal, so that the silicon carbide crystals at different parts of the seed crystal grow evenly, avoiding defects such as "concave interface" in the silicon carbide crystals, and improving the growth quality of the silicon carbide crystals.
  • the device for growing high-quality silicon carbide crystals includes a crucible 100, an annular guide plate 200, a heat preservation structure (not shown in the figure) and a heating structure (not shown in the figure).
  • the heating structure and the heat preservation structure are both arranged on the outside of the crucible 100.
  • the heating structure is used to generate heat in the crucible 100, so that the silicon carbide powder 300 at the bottom of the crucible sublimates to form a gas phase crystal growth component, which can be specifically induction heating or resistance heating.
  • the heat preservation structure is used to slow down the heat loss of the crucible 100, which can be specifically graphite felt, graphite paper, etc.
  • the top wall of the crucible 100 (the crucible 100 generally includes a detachably connected crucible body and a crucible cover, the crucible cover forms the top wall of the crucible 100, and the crucible body forms the bottom wall and side walls of the crucible 100) is provided with a seed crystal 110 for growing silicon carbide crystals 400, and the seed crystal 110 is fixed in a manner including but not limited to bonding, clamping, etc.
  • the bottom wall and side walls of the crucible 100 are used together to place silicon carbide powder 300.
  • the annular guide plate 200 is disposed in the crucible 100 to guide the gas phase crystal growth component formed after the silicon carbide powder 300 is sublimated to flow toward the seed crystal 110 , thereby achieving the growth of the silicon carbide crystal 400 .
  • the bottom end of the annular guide plate 200 is connected to the side wall of the crucible 100, generally connected to the middle and upper part of the side wall of the crucible 100.
  • the top end of the annular guide plate 200 extends toward the seed crystal 110 and has a gap 106 between it and the edge of the seed crystal 110.
  • the annular guide plate 200 and the seed crystal 110 divide the inner space of the crucible 100 into two chambers, wherein the annular guide plate 200, the seed crystal 110, part of the side wall of the crucible 100 (the part below the annular guide plate 200), and the bottom wall of the crucible 100 together form a first chamber 102, and the annular guide plate 200, the seed crystal 110, part of the side wall of the crucible 100 (the part above the annular guide plate 200), and the top wall of the crucible 100 together form a second chamber 104.
  • the first chamber 102 includes a large chamber and a small chamber that are interconnected, the large chamber is roughly cylindrical, the small chamber is roughly truncated cone-shaped and is located above the large chamber, and the second chamber 104 is roughly annular and arranged around the small chamber.
  • the first chamber 102 and the second chamber 104 are connected via the gap 106 .
  • the vapor phase crystal growth component formed by heating and sublimating the silicon carbide powder 300 in the crucible 100 can flow upward to the seed crystal 110 in the first chamber 102 and flow into the second chamber 104 from the annular gap 106 .
  • the annular guide plate 200 can adopt different structures as needed. Please refer to Figure 1 again.
  • the annular guide plate 200 includes a first annular portion 210 and a second annular portion 220 connected at an angle.
  • the axes of the first annular portion 210 and the second annular portion 220 coincide with the axis of the crucible 100.
  • One end of the first annular portion 210 away from the second annular portion 220 is connected to the inner wall of the crucible 100, and one end of the second annular portion 220 away from the first annular portion 210 extends toward the seed crystal 110.
  • the first annular portion 210 is in the shape of a plate and is perpendicular to the axis of the crucible 100, and the outer peripheral wall of the first annular portion 210 is connected to the side wall of the crucible 100.
  • the second annular portion 220 is in the shape of a hollow truncated cone, the bottom end of the second annular portion 220 is connected to the inner peripheral wall of the first annular portion 210, and the top end extends toward the seed crystal 110.
  • the hollow truncated cone configuration can reduce the resistance to the gas phase crystal growth component on the one hand, and can also more effectively guide the gas phase crystal growth component to flow toward the seed crystal 110 on the other hand.
  • a pressure equalizing structure for balancing the pressure of the first chamber 102 and the second chamber 104 is provided on the annular guide plate 200.
  • the pressure equalizing structure can adopt different structures as needed. Please refer to FIG. 1 again.
  • the pressure equalizing structure includes an air hole 212 opened on the annular guide plate 200, and the air hole 212 connects the first chamber 102 and the second chamber 104, that is, the first chamber 102 and the second chamber 104 are connected through the air hole 212 in addition to the gap 106.
  • the vapor phase crystal growth component in the first chamber 102 can also flow into the second chamber 104 through the air hole 212 (see Figure 1 for details, the dotted line with an arrow in the figure represents the flow path of the vapor phase crystal growth component), so that the pressure of the second chamber 104 increases simultaneously with the pressure of the first chamber 102, thereby balancing the pressure of the first chamber 102 and the second chamber 104, reducing the pressure difference between the two, thereby reducing the flow rate of the vapor phase crystal growth component at the gap 106, and further making the growth speed of the silicon carbide crystal 400 at the edge and center of the seed crystal 110 as similar as possible, thereby avoiding the defect of "concave interface" during the growth of the silicon carbide crystal 400 and ensuring the growth quality of the silicon carbide crystal 400.
  • the specific position of the air hole 212 on the annular guide plate 200 can be set according to the needs.
  • the air hole 212 is opened in the first annular portion 210.
  • the air hole 212 can also be opened in the second annular portion 220 or in the first annular portion 210 and the second annular portion 220 at the same time.
  • the multiple pores 212 are arranged in one or more circles around the axis of the crucible 100.
  • the multiple pores 212 are arranged in multiple circles around the axis of the crucible 100, and the multiple circles of pores 212 are arranged at intervals along the radial direction of the crucible 100, and any two adjacent circles of pores 212 are staggered in the radial direction of the crucible 100.
  • Arranging multiple circles of pores 212 around the axis of the crucible 100 can effectively increase the communication area between the first chamber 102 and the second chamber 104, so as to more effectively reduce the pressure difference between the first chamber 102 and the second chamber 104.
  • the staggered arrangement of the two adjacent circles of pores 212 can improve the uniformity of the multiple communication positions of the first chamber 102 and the second chamber 104, so as to make the pressure at different positions in the second chamber 104 as uniform as possible, which is conducive to the rapid increase of the pressure in the second chamber 104 to balance with the pressure of the first chamber 102.
  • the number of air holes 212 in the three circles is equal and is 16-20.
  • the multiple air holes 212 in the outermost circle correspond one-to-one to the multiple air holes 212 in the middle circle
  • the multiple air holes 212 in the middle circle correspond one-to-one to the multiple air holes 212 in the innermost circle.
  • the line connecting the centers of the three corresponding air holes 212 in the outermost circle, the middle circle and the innermost circle is an arc line, and the apertures of the three air holes 212 gradually decrease from the outside to the inside.
  • Such an arrangement can make the gas phase crystal growth component that passes through the multiple air holes 212 from the first chamber 102 and enters the second chamber 104 produce a swirl effect close to the outer wall of the second annular portion 220, so that the gas phase crystal growth component can reach the gap 106 more quickly and evenly to balance the pressure of the two chambers, thereby reducing the flow rate of the gas phase crystal growth component in the gap 106.
  • the shape and orientation of the pores 212 can also be set according to actual needs.
  • the pores 212 are inclined toward the seed crystal 110.
  • the aperture of the pores 212 gradually decreases in the direction close to the seed crystal 110.
  • the pores 212 are inclined toward the seed crystal 110, which can make the gas phase crystal growth components reach the gap 106 faster after passing through the pores 212, thereby increasing the pressure increase rate of the second chamber 104.
  • the gradually decreasing aperture of the pores 212 has a pressurizing effect, which can further increase the pressure increase rate of the second chamber 104.
  • the top of the second annular portion 220 is provided with a chamfer 222 near the outer periphery of the second chamber 104, so that the gas phase crystal growth components in the second chamber 104 can reach the gap 106 more smoothly, thereby achieving pressure balance between the first chamber 102 and the second chamber 104.
  • the air holes 212 are inclined toward the seed crystal 110 and the apertures are gradually reduced, so that the gas phase crystal growth components in the first chamber 102 can pass through the air holes 212 while rising into the second chamber 104 and quickly reach the gap 106 between the edge of the seed crystal 110 and the top of the annular guide plate 200, thereby quickly balancing the pressures in the first chamber 102 and the second chamber 104, reducing the flow rate of the gas phase crystal growth components in the gap 106, and allowing the silicon carbide crystal 400 to grow uniformly at the edge and center of the seed crystal 110, thereby ensuring the quality of the silicon carbide crystal 400.
  • the overall structure, working principle and technical effects of the device for growing high-quality silicon carbide crystals provided in this embodiment are basically the same as those of the first embodiment, and the difference lies in the specific scheme of the pressure equalization structure.
  • the pressure equalization structure includes silicon carbide powder 300 placed in the second chamber 104.
  • This structure does not require the air holes 212 to be opened on the annular guide plate 200, and only requires the silicon carbide powder 300 to be placed in the first chamber 102 and a relatively small amount of silicon carbide powder 300 to be placed in the second chamber 104.
  • the silicon carbide powder 300 in the first chamber 102 is heated and sublimated to form a vapor phase crystal growth component and flows upward to the seed crystal 110 to grow the silicon carbide crystal 400
  • the silicon carbide powder 300 in the second chamber 104 is also heated and sublimated to form a vapor phase crystal growth component (see FIG.
  • the dotted line with an arrow in the figure represents the flow path of the vapor phase crystal growth component
  • the pressure in the second chamber 104 increases simultaneously with the pressure of the first chamber 102, so as to reduce the pressure difference between the first chamber 102 and the second chamber 104 as much as possible, so that the pressures of the two reach a certain equilibrium state, thereby reducing the flow rate of the vapor phase crystal growth component in the first chamber 102 at the gap 106, so that the growth speed of the silicon carbide crystal 400 at the edge and the center of the seed crystal 110 is as similar as possible, so that the silicon carbide crystal 400 can grow uniformly at various parts of the seed crystal 110, avoiding defects such as "concave interface", and improving the growth quality of the silicon carbide crystal 400.
  • the apparatus for growing high-quality silicon carbide crystals both include a crucible 100 and an annular guide plate 200, and the top wall of the crucible 100 is provided with a seed crystal 110 for growing a silicon carbide crystal 400.
  • the annular guide plate 200 is disposed in the crucible 100, the bottom end of the annular guide plate 200 is connected to the side wall of the crucible 100, and the top end extends toward the seed crystal 110 and has a gap 106 between the top end and the edge of the seed crystal 110.
  • the annular guide plate 200, the seed crystal 110, the side wall of the crucible 100, and the bottom wall of the crucible 100 together form a first chamber 102
  • the annular guide plate 200, the seed crystal 110, the side wall of the crucible 100, and the top wall of the crucible 100 together form a second chamber 104
  • the first chamber 102 and the second chamber 104 are connected through the gap 106.
  • the annular guide plate 200 is provided with a pressure equalizing structure for balancing the pressure of the first chamber 102 and the second chamber 104.
  • the pressure difference between the first chamber 102 and the second chamber 104 can be effectively reduced, and the pressure of the two chambers can be made as close as possible, so that the flow rate of the gas phase crystal growth component at the gap 106 between the top of the annular guide plate 200 and the edge of the seed crystal 110 can be effectively reduced, so that the growth rate of the silicon carbide crystal 400 at the edge of the seed crystal 110 is as close as possible to the growth rate of the silicon carbide crystal 400 at the center of the seed crystal 110, thereby avoiding defects such as "concave interface" of the silicon carbide crystal 400 on the seed crystal 110, and improving the growth quality of the silicon carbide crystal 400.
  • This embodiment provides a method for growing high-quality silicon carbide crystals, which is based on the apparatus of the first embodiment or the second embodiment and specifically includes the following steps:
  • the crucible 100 is evacuated and then filled with an inert gas
  • the crucible 100 is evacuated again to reduce the pressure inside the crucible 100 to 0.01-4E3Pa;
  • the silicon carbide powder 300 sublimates and begins to grow a silicon carbide crystal 400 on the seed crystal 110;
  • the crucible 100 is refilled with inert gas to increase the pressure inside the crucible 100 to 5E3-1E5Pa;
  • the heating of the crucible 100 is stopped, and after the temperature inside the crucible 100 drops to room temperature, the silicon carbide crystal 400 is taken out of the crucible 100.
  • the rate control of the exhaust and the filling is realized by the cooperation of the mechanical pump, the butterfly valve and the flow meter.
  • This embodiment provides a silicon carbide crystal 400, which is prepared by the method for growing high-quality silicon carbide crystal provided in the third embodiment and has the characteristics of few defects and high quality.
  • the device for growing high-quality silicon carbide crystals provided by the present invention is improved relative to the first embodiment in that:
  • the crucible 100 is provided with a plurality of concentration adjustment holes 108 , which are located at the side or upper part of the second chamber 104 ;
  • the saturation concentration of gas phase components such as Si and Si 2 C is relatively high, forming a crystal growth gas phase component that is obviously rich in silicon, which is not conducive to the high-quality growth of silicon carbide crystal 400.
  • the presence of the concentration adjustment through hole 108 will cause the excess silicon-rich component to overflow from the crucible 100, and the carbon-silicon ratio of the crystal growth gas phase component in the crucible is regulated, which is conducive to improving the growth quality of the silicon carbide crystal 400;
  • the concentration adjustment through hole 108 also has a drainage function, guiding the crystal growth gas phase components to flow upward, thereby facilitating the formation of the silicon carbide crystal 400.
  • the device for growing high-quality silicon carbide crystals provided by the present invention is improved relative to the first embodiment in that:
  • the first annular portion 210 includes two layers of sub-annular portions 214, the pores 212 being distributed on the two layers of sub-annular portions 214.
  • the silicon carbide crystal growth gas phase components flow through the two layers of sub-annular portions 214 from bottom to top.
  • the sub-annular portion 214 located at the lower layer has pores 212 with larger apertures than the sub-annular portion 214 at the upper layer.
  • the upper and lower sub-annular portions 214 in this embodiment may not be directly connected, for example, the upper sub-annular portion 214 is connected to the second annular portion 220, and the lower sub-annular portion 214 is connected to the side wall of the crucible 100;
  • the technical solution of this embodiment is to balance the distribution of the concentration of the crystal growth gas phase components from the perspective of the flow rate. Specifically, at the edge of the annular guide plate 200, that is, at the position of the first annular portion 210, it is more susceptible to heat and has a higher temperature. Therefore, the flow rate of the crystal growth gas phase components is faster, which is not conducive to the balance of the concentration of the crystal growth gas phase components. Therefore, two layers of sub-annular portions 214 are provided, and the aperture of the pores 212 is gradually reduced from bottom to top to form additional resistance to the faster flowing crystal growth gas phase components, so as to balance the distribution of the concentration of the crystal growth gas phase components in the crucible 100.
  • the sub-annular portion 214 may be multi-layered, such as 3 to 5 layers;
  • the aperture of the pores 212 of the uppermost sub-annular portion 214 can be sufficiently small, even approaching zero, to form sufficient resistance.

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Abstract

本发明提供了一种生长高质量碳化硅晶体的装置、方法及碳化硅晶体，涉及碳化硅晶体生长领域，本装置内设置有用于引导气相长晶组分流向籽晶的环形导流板，环形导流板上设置有均压结构，通过在环形导流板上设置该均压结构，可以有效减小环形导流板上方的第二腔室和下方的第一腔室的压差，使两个腔室的压力尽量接近，这样就可以有效降低气相长晶组分在环形导流板顶端和籽晶边缘之间的间隙处的流速，从而使得籽晶边缘的碳化硅晶体的生长速度与籽晶中心的碳化硅晶体的生长速度尽可能相同，进而避免生长在籽晶上的碳化硅晶体出现"凹界面"等缺陷，提高碳化硅晶体的生长质量。本方法制备的碳化硅晶体具有缺陷少，质量高的特点。

Description

生长高质量碳化硅晶体的装置、方法及碳化硅晶体 技术领域
本发明涉及碳化硅晶体生长领域，具体而言，涉及一种生长高质量碳化硅晶体的装置、方法及碳化硅晶体。
 背景技术
碳化硅作为第三代半导体材料的代表，因具有禁带宽度大、饱和电子迁移率高、击穿场强大、热导率高等优异性质，而被广泛应用于电力电子、射频器件、光电子器件等领域。
现有的用于碳化硅晶体生长的坩埚，为了提高碳化硅晶体在籽晶上的生长速度，同时限制碳化硅晶体生长的尺寸和形状，一般会在坩埚的中上部位置设置导流板，以引导气相长晶组分(主要组分为Si mC n，即碳硅组分)尽可能地流向籽晶。但是，为了避免导流板与籽晶发生干涉，通常导流板的顶部与籽晶的边缘会预留间隙，而该间隙会导致碳化硅晶体生长初期导流板上方的腔室和下方的腔室之间存在一定的压差，使气相长晶组分在该间隙处的流速快、流量大，从而导致籽晶边缘的生长速度过快而出现“凹界面”，影响碳化硅晶体的生长质量。
发明内容
本发明的目的包括，例如，提供了一种生长高质量碳化硅晶体的装置、方法及碳化硅晶体，其能够有效降低气相长晶组分在导流板顶部和籽晶边缘之间的间隙处的流速，使碳化硅晶体能在籽晶的各个部位均匀生长，从而提高碳化硅晶体的生长质量。
本发明的实施例可以这样实现：
第一方面，本发明提供一种生长高质量碳化硅晶体的装置，包括：
坩埚，所述坩埚的顶壁设置有用于生长碳化硅晶体的籽晶；
环形导流板，所述环形导流板设置于所述坩埚内，所述环形导流板的底端连接于所述坩埚的侧壁，顶端向所述籽晶延伸且与所述籽晶的边缘之间具有间隙，所述环形导流板、所述籽晶、所述坩埚的侧壁、所述坩埚的底壁共同围成第一腔室，所述环形导流板、所述籽晶、所述坩埚的侧壁及所述坩埚的顶壁共同围成第二腔室，所述第一腔室和所述第二腔室通过所述间隙连通，所述环形导流板上设置有用于平衡所述第一腔室和所述第二腔室压力的均压结构。
在可选的实施方式中，所述均压结构包括开设于所述环形导流板上的气孔，所述气孔连通所述第一腔室和所述第二腔室。
在可选的实施方式中，所述气孔的数量为多个，且多个所述气孔围绕所述坩埚的轴线设置成一圈或者多圈。
在可选的实施方式中，多个所述气孔围绕所述坩埚的轴线设置成多圈，多圈所述气孔沿所述坩埚的径向间隔排布，任意相邻两圈所述气孔在所述坩埚的径向上错开。
在可选的实施方式中，所述环形导流板包括呈夹角连接的第一环形部和第二环形部，所述第一环形部远离所述第二环形部的一端与所述坩埚的内壁连接，所述第二环形部远离所述第一环形部的一端向所述籽晶延伸，所述气孔开设于所述第一环形部。
在可选的实施方式中，所述第一环形部呈平板状且与所述坩埚的轴线垂直，所述第一环形部的外周壁与所述坩埚的侧壁连接，所述第二环形部呈中空圆柱状或者中空圆台状，所述第二环形部的底端与所述第一环形部的内周壁连接，顶端向所述籽晶延伸。
在可选的实施方式中，所述气孔朝向所述籽晶倾斜设置。
在可选的实施方式中，所述气孔的孔径沿靠近所述籽晶的方向逐渐减小。
在可选的实施方式中，所述均压结构包括放置于所述第二腔室内的碳化硅粉末。
在可选的实施方式中，所述坩埚上位于所述第二腔室的外周处设置有至少一个浓度调节通孔。
在可选的实施方式中，所述第一环形部包括若干层上下分布的子环形部，所述气孔分布于每一个子环形部上。
在可选的实施方式中，沿着长晶组分的传输方向，若干层所述子环形部上具有孔径渐小的气孔。
第二方面，本发明实施例还提供了一种生长高质量碳化硅晶体的方法，其基于上述任一实施方式所述的生长高质量碳化硅晶体的装置，包括：
在所述坩埚内放入碳化硅粉末；
对所述坩埚抽气后充入惰性气体；
加热所述坩埚，以使所述坩埚内部温度升高至2000-2600℃；
再次对所述坩埚抽气，以使所述坩埚内部压力降低至0.01～4E3Pa；
所述碳化硅粉末升华并在所述籽晶上开始生长碳化硅晶体；
所述碳化硅晶体生长10-300h后，重新对所述坩埚充入惰性气体，以使所述坩埚内部压力升高至5E3～1E5Pa；
所述碳化硅晶体生长结束后停止对坩埚加热，等到所述坩埚内部温度降低至室温后，将所述碳化硅晶体取出坩埚。
第三方面，本发明还提供了一种碳化硅晶体，其采用上述实施方式所述的生长高质量碳化硅晶体的方法制备而成。
本发明实施例的有益效果包括，例如：
本发明提供的生长高质量碳化硅晶体的装置包括坩埚和环形导流板，坩埚的顶壁设置有用于生长碳化硅晶体的籽晶。环形导流板设置于坩埚内，环形导流板的底端连接于坩埚的侧壁，顶端向籽晶延伸且与籽晶的边缘之间具有间隙。环形导流板、籽晶、坩埚的侧壁、坩埚的底壁共同围成第一腔室，环形导流板、籽晶、坩埚的侧壁及坩埚的顶壁共同围成第二腔室，第一腔室和第二腔室通过间隙连通。环形导流板上设置有用于平衡第一腔室和第二腔室压力的均压结构。通过在环形导流板上设置该均压结构，可以有效减小第一腔室和第二腔室的压差，使两个腔室的压力尽量接近，这样就可以有效降低气相长晶组分在环形导流板顶端和籽晶边缘之间的间隙处的流速，从而使得籽晶边缘的碳化硅晶体的生长速度与籽晶中心的碳化硅晶体的生长速度尽可能相同，进而避免籽晶上的碳化硅晶体出现“凹界面”等缺陷，提高碳化硅晶体的生长质量。
从另外的角度来讲，本发明通过控制长晶气相组分在径向上的浓度分布，避免了晶体边缘长晶气相组分浓度过高，生长速率过快导致形成边缘多晶、相变等缺陷，或形成晶体凹界面影响晶体生长质量。
相应地，本生长高质量碳化硅晶体的方法采用上述的装置，其制备的碳化硅晶体具有缺陷少，质量高的特点。
 附图说明
为了更清楚地说明本发明实施例的技术方案，下面将对实施例中所需要使用的附图作简单地介绍，应当理解，以下附图仅示出了本发明的某些实施例，因此不应被看作是对范围的限定，对于本领域普通技术人员来讲，在不付出创造性劳动的前提下，还可以根据这些附图获得其他相关的附图。
图1为本发明第一实施例提供的生长高质量碳化硅晶体的装置的结构示意图；
图2为本发明第一实施例提供的环形导流板的结构示意图；
图3为本发明第二实施例提供的生长高质量碳化硅晶体的装置的结构示意图；
图4为本发明第五实施例提供的生长高质量碳化硅晶体的装置的结构示意图；
图5为本发明第六实施例提供的生长高质量碳化硅晶体的装置的结构示意图；
图标：100-坩埚；102-第一腔室；104-第二腔室；106-间隙；108-浓度调节孔；110-籽晶；200-环形导流板；210-第一环形部；212-气孔；214-子环形部；220-第二环形部；222-倒圆角；300-碳化硅粉末；400-碳化硅晶体。
 具体实施方式
为使本发明实施例的目的、技术方案和优点更加清楚，下面将结合本发明实施例中的附图，对本发明实施例中的技术方案进行清楚、完整地描述，显然，所描述的实施例是本发明一部分实施例，而不是全部的实施例。通常在此处附图中描述和示出的本发明实施例的组件可以以各种不同的配置来布置和设计。
因此，以下对在附图中提供的本发明的实施例的详细描述并非旨在限制要求保护的本发明的范围，而是仅仅表示本发明的选定实施例。基于本发明中的实施例，本领域普通技术人员在没有作出创造性劳动前提下所获得的所有其他实施例，都属于本发明保护的范围。
应注意到：相似的标号和字母在下面的附图中表示类似项，因此，一旦某一项在一个附图中被定义，则在随后的附图中不需要对其进行进一步定义和解释。
在本发明的描述中，需要说明的是，若出现术语“上”、“下”、“内”、“外”等指示的方位或位置关系为基于附图所示的方位或位置关系，或者是该发明产品使用时惯常摆放的方位或位置关系，仅是为了便于描述本发明和简化描述，而不是指示或暗示所指的装置或元件必须具有特定的方位、以特定的方位构造和操作，因此不能理解为对本发明的限制。
此外，若出现术语“第一”、“第二”等仅用于区分描述，而不能理解为指示或暗示相对重要性。
需要说明的是，在不冲突的情况下，本发明的实施例中的特征可以相互结合。
现有的用于碳化硅晶体生长的坩埚，为了提高籽晶上的碳化硅晶体的生长速度，一般会在坩埚的侧壁上设置导流板，用于引导气相长晶组分直接流向坩埚顶壁的籽晶。但是，为了避免导流板与籽晶发生干涉，导流板顶端的位置会被限制，从而使其与籽晶边缘之间存在一定的间隙。该间隙会导致碳化硅晶体生长初期导流板上方的腔室和下方的腔室存在一定的压差，而该压差会导致气相长晶组分在该间隙的流速很高，即气相长晶组分在籽晶边缘的流速远高于在籽晶中心的流速，这就必然导致碳化硅晶体在籽晶边缘的生长速度远高于在籽晶中心的生长速度，导致碳化硅晶体容易出现“凹界面”等缺陷，严重影响碳化硅晶体的生长质量。
针对上述情况，本发明提供了一种生长高质量碳化硅晶体的装置及方法，其通过在坩埚内的导流板上设置均压结构，可以有效平衡坩埚内导流板上下两个腔室的压力，有效减小两个腔室的压差，从而有效减小气相长晶组分在导流板顶端和籽晶边缘之间的间隙处的流速，使得碳化硅晶体在籽晶边缘的生长速度尽可能与在籽晶中心的生长速度相同，从而使得籽晶不同部位的碳化硅晶体均匀地生长，避免碳化硅晶体出现“凹界面”等缺陷，提高碳化硅晶体的生长质量。
下面通过实施例并结合附图详细介绍本发明提供的生长高质量碳化硅晶体的装置的整体构造、工作原理及取得的技术效果以及配套的方法的详细步骤。
第一实施例
请参照图1和图2，本发明提供的生长高质量碳化硅晶体的装置包括坩埚100、环形导流板200、保温结构(图中未示出)和加热结构(图中未示出)。其中，加热结构和保温结构均设置于坩埚100的外侧，加热结构用于使坩埚100产生热量，从而使坩埚底部的碳化硅粉末300升华形成气相长晶组分，其具体可以为感应加热或者电阻加热等。保温结构用于减缓坩埚100的热量散失，其具体可以石墨毡、石墨纸等。
坩埚100的顶壁(坩埚100一般包括可拆卸连接的坩埚体和坩埚盖，坩埚盖形成坩埚100的顶壁，坩埚体形成坩埚100的底壁和侧壁)设置有用于生长碳化硅晶体400的籽晶110，籽晶110固定的方式包括但不限于粘接、夹持等。坩埚100的底壁和侧壁共同用于放置碳化硅粉末300。
环形导流板200设置于坩埚100内，用于引导碳化硅粉末300升华后形成的气相长晶组分流向籽晶110，从而实现碳化硅晶体400的生长。
详细地，环形导流板200的底端连接于坩埚100的侧壁，一般连接于坩埚100的侧壁的中上部。环形导流板200的顶端向籽晶110延伸且与籽晶110的边缘之间具有间隙106。
环形导流板200和籽晶110将坩埚100的内部空间分隔为两个腔室，其中，环形导流板200、籽晶110、坩埚100的部分侧壁(位于环形导流板200下方的部分)、坩埚100的底壁共同围成第一腔室102，环形导流板200、籽晶110、坩埚100的部分侧壁(位于环形导流板200上方的部分)及坩埚100的顶壁共同围成第二腔室104。第一腔室102包括相互连通的大腔室和小腔室，大腔室大致呈圆柱形，小腔室大致呈圆台形且位于大腔室的上方，第二腔室104大致呈环形且环绕小腔室设置。第一腔室102和第二腔室104通过间隙106连通，坩埚100内的碳化硅粉末300加热升华后形成的气相长晶组分，在第一腔室102内向上流动至籽晶110处的同时，能从该环形的间隙106流入第二腔室104。
环形导流板200可以根据需要采用不同的结构，请再参照图1，本实施例中，环形导流板200包括呈夹角连接的第一环形部210和第二环形部220，第一环形部210和第二环形部220的轴线均与坩埚100的轴线重合，第一环形部210远离第二环形部220的一端与坩埚100的内壁连接，第二环形部220远离第一环形部210的一端向籽晶110延伸。
本实施例中，第一环形部210呈平板状且与坩埚100的轴线垂直，第一环形部210的外周壁与坩埚100的侧壁连接。第二环形部220呈中空圆台状，第二环形部220的底端与第一环形部210的内周壁连接，顶端向籽晶110延伸。中空圆台状的设置一方面可以减小对气相长晶组分的阻力，另一方面也可以更有效地引导气相长晶组分流向籽晶110。
需要说明的是，其它实施例中，第一环形部210也可以为中空圆台状；第二环形部220也可以为中空圆柱状；环形导流板200也可以包括至少三个环形部，至少三个环形部依次呈夹角连接，最低处的环形部与坩埚100的侧壁连接，最高处的环形部延伸至接近籽晶110边缘的位置。
更进一步地，环形导流板200上设置有用于平衡第一腔室102和第二腔室104压力的均压结构。均压结构可以根据需要采用不同的结构，请再参照图1，本实施例中，均压结构包括开设于环形导流板200上的气孔212，气孔212连通第一腔室102和第二腔室104，也即第一腔室102和第二腔室104除了通过间隙106连通外，还通过气孔212连通。
这样，第一腔室102内的气相长晶组分除了在环形导流板200的引导下流向籽晶110外，还可以通过气孔212流入第二腔室104(详见图1，图中带箭头的虚线表示气相长晶组分的流动路径)，使得第二腔室104的压力随着第一腔室102的压力同时升高，从而可以平衡第一腔室102和第二腔室104的压力，减小二者的压差，从而使得气相长晶组分在间隙106处的流速降低，进而使得碳化硅晶体400在籽晶110边缘和中心的生长速度尽可能相同，从而避免碳化硅晶体400生长过程中出现“凹界面”的缺陷，保证碳化硅晶体400的生长质量。
气孔212在环形导流板200上的具体位置可以根据需求设置，本实施例中，详细地，气孔212开设于第一环形部210。其它实施例中，气孔212也可以开设于第二环形部220或者同时开设于第一环形部210和第二环形部220。
气孔212的数量为多个，且多个所述气孔212围绕坩埚100的轴线设置成一圈或者多圈。本实施例中，多个气孔212围绕坩埚100的轴线设置成多圈，多圈气孔212沿坩埚100的径向间隔排布，任意相邻两圈气孔212在坩埚100的径向上错开。围绕坩埚100的轴线设置多圈气孔212可以有效增大第一腔室102和第二腔室104的连通面积，从而可以更有效地减小第一腔室102和第二腔室104之间的压差。而相邻两圈的气孔212错开设置则可以提高第一腔室102和第二腔室104的多个连通位置的均匀性，从而使第二腔室104内不同位置的压力尽可能均匀，利于第二腔室104内压力的快速升高，以与第一腔室102的压力平衡。
进一步地，本实施例中，气孔212的圈数为三圈，三圈气孔212的数量相等且均为16-20个，最外侧一圈的多个气孔212与中间一圈的多个气孔212一一对应，中间一圈的多个气孔212与最内侧一圈的多个气孔212一一对应，相互对应的分别位于最外侧一圈、中间一圈以及最内侧一圈的三个气孔212的圆心的连线为弧线且从外到内三个气孔212的孔径逐渐减小，这样设置可以使得从第一腔室102穿过多个气孔212后进入第二腔室104的气相长晶组分产生贴近于第二环形部220外壁的旋流效果，使得气相长晶组分可以更加快速均匀地到达间隙106处平衡两个腔室的压力，降低气相长晶组分在间隙106处的流速。
气孔212的形状和朝向也可以根据实际需要设置，本实施例中，气孔212朝向籽晶110倾斜设置。进一步地，气孔212的孔径沿靠近籽晶110的方向逐渐减小。气孔212朝籽晶110倾斜，可以使气相长晶组分穿过气孔212后更快地到达间隙106处，提高第二腔室104的压力的升高速度。而气孔212的孔径逐渐变小具有增压作用，可以进一步提高第二腔室104的压力的升高速度。同时，第二环形部220的顶端靠近第二腔室104的外周设置有倒圆角222，以使第二腔室104内的气相长晶组分能更流畅地到达间隙106处，实现第一腔室102和第二腔室104的压力平衡。
通过在环形导流板200上设置多圈围绕坩埚100的轴线设置的气孔212，气孔212向籽晶110倾斜且孔径逐渐减小，可以使得第一腔室102内的气相长晶组分在上升的同时穿过气孔212进入第二腔室104并快速到达籽晶110边缘和环形导流板200顶端之间的间隙106处，从而快速平衡第一腔室102和第二腔室104的压力，减小气相长晶组分在间隙106处的流速，使得碳化硅晶体400能在籽晶110边缘和中心均匀地生长，保证碳化硅晶体400的质量。
第二实施例
本实施例提供的用于生长高质量碳化硅晶体的装置，其整体构造、工作原理及取得的技术效果与第一实施例基本相同，不同之处在于均压结构的具体方案。
请参照图3，本实施例中，均压结构包括放置于第二腔室104内的碳化硅粉末300。这种结构形式不需要在环形导流板200上开设气孔212，只需要在第一腔室102内放置碳化硅粉末300的同时在第二腔室104内也放置相对少量的碳化硅粉末300即可。这样，在第一腔室102内的碳化硅粉末300加热升华后形成气相长晶组分，并向上流动至籽晶110上生长碳化硅晶体400的同时，第二腔室104内的碳化硅粉末300也会同时加热升华形成气相长晶组分(详见图2，图中带箭头的虚线表示气相长晶组分的流动路径)，从而使得第二腔室104内的压力随着第一腔室102的压力同时升高，以尽可能地减小第一腔室102和第二腔室104的压差，使两者的压力达到一定的平衡状态，从而减小第一腔室102内的气相长晶组分在间隙106处的流速，使得碳化硅晶体400在籽晶110边缘和中心的生长速度尽可能相同，进而使得碳化硅晶体400能在籽晶110的各个部位均匀生长，避免出现“凹界面”等缺陷，提高碳化硅晶体400的生长质量。
综上，本发明上述第一实施例和第二实施例提供的生长高质量碳化硅晶体的装置均包括坩埚100和环形导流板200，坩埚100的顶壁设置有用于生长碳化硅晶体400的籽晶110。环形导流板200设置于坩埚100内，环形导流板200的底端连接于坩埚100的侧壁，顶端向籽晶110延伸且与籽晶110的边缘之间具有间隙106。环形导流板200、籽晶110、坩埚100的侧壁、坩埚100的底壁共同围成第一腔室102，环形导流板200、籽晶110、坩埚100的侧壁及坩埚100的顶壁共同围成第二腔室104，第一腔室102和第二腔室104通过间隙106连通。环形导流板200上设置有用于平衡第一腔室102和第二腔室104压力的均压结构。通过在环形导流板200上设置该均压结构，可以有效减小第一腔室102和第二腔室104的压差，使两个腔室的压力尽量接近，这样就可以有效降低气相长晶组分在环形导流板200顶端和籽晶110边缘之间的间隙106处的流速，从而使得籽晶110边缘的碳化硅晶体400的生长速度与籽晶110中心的碳化硅晶体400的生长速度尽可能相同，进而避免籽晶110上的碳化硅晶体400出现“凹界面”等缺陷，提高碳化硅晶体400的生长质量。
第三实施例
本实施例提供了一种生长高质量碳化硅晶体的方法，其基于第一实施例或者第二实施例的装置，具体包括以下步骤：
在坩埚100内放入碳化硅粉末300；
对坩埚100抽气后充入惰性气体；
加热坩埚100，以使坩埚100内部温度升高至2000-2600℃；
再次对坩埚100抽气，以使坩埚100内部压力降低至0.01～4E3Pa；
碳化硅粉末300升华并在籽晶110上开始生长碳化硅晶体400；
碳化硅晶体400生长10-300h后，重新对坩埚100充入惰性气体，以使坩埚100内部压力升高至5E3～1E5Pa；
碳化硅晶体400生长结束后停止对坩埚100加热，等到坩埚100内部温度降低至室温后，将碳化硅晶体400取出坩埚100。
其中，抽气和充气的速率控制由机械泵、蝶阀及流量计配合实现。在坩埚100内放入碳化硅粉末300时，如果基于第一实施例的装置，只需要在第一腔室102放入碳化硅粉末300即可；如果基于第二实施例的装置，则需要同时在第一腔室102和第二腔室104放入碳化硅粉末300。
第四实施例
本实施例提供了一种碳化硅晶体400，其采用第三实施例提供的生长高质量碳化硅晶体的方法制备而成，具有缺陷少，质量高的特点。
第五实施例
请参照图4，本发明提供的生长高质量碳化硅晶体的装置相对于第一实施例的改进之处在于：
坩埚100上开设有若干个浓度调节通孔108，若干个浓度调节通孔108位于第二腔室104所处位置的侧部或上部；
本实施例中，考虑到长晶初期，气相组分中的如Si和Si 2C的饱和浓度相对较高，形成明显富硅的长晶气相组分，不利于碳化硅晶体400的高质量生长。而浓度调节通孔108的存在，会使得多余的富硅组分向坩埚100外溢出，调控坩埚内的长晶气相组分的碳硅比，有利于提高碳化硅晶体400的生长质量；
同时，浓度调节通孔108还具有引流的作用，引导长晶气相组分向上方流动，便于碳化硅晶体400的生成。
第六实施例
请参照图5，本发明提供的生长高质量碳化硅晶体的装置相对于第一实施例的改进之处在于：
第一环形部210包括上下两层子环形部214，气孔212分布于这两层子环形部214上，在加热时，碳化硅长晶气相组分从下至上流过这两层子环形部214，位于下层的子环形部214相对于上层的子环形部214而言，其上具有孔径更大的气孔212；
所属领域技术人员容易理解的，本实施例中的上下两层子环形部214可以不存在直接连接关系，如：上面一层子环形部214与第二环形部220连接，下面一层子环形部214与坩埚100的侧壁相连接；
本实施例的技术方案是为了从流动速率出发平衡长晶气相组分浓度的分布，具体的，在环形导流板200的边缘处，也就是位于第一环形部210的位置处，其更易受热，温度较高，因此长晶气相组分的流动速率较快，不利于长晶气相组分浓度的平衡，因此设置两层子环形部214，且使得气孔212的孔径从下至上逐渐减小，以对较快速流动的长晶气相组分构成额外的阻力，以此来平衡坩埚100内长晶气相组分浓度的分布；
所属领域技术人员容易理解的，作为本实施例的进一步优选，子环形部214可以是多层，如3~5层；
最上面一层子环形部214的气孔212孔径可以充分小，乃至于趋向于零，以构成足够的阻力。
以上所述，仅为本发明的具体实施方式，但本发明的保护范围并不局限于此，任何熟悉本技术领域的技术人员在本发明揭露的技术范围内，可轻易想到的变化或替换，都应涵盖在本发明的保护范围之内。

Claims (10)

  1. 一种生长高质量碳化硅晶体的装置，其特征在于，
    包括：
    坩埚(100)，所述坩埚(100)的顶壁设置有用于生长碳化硅晶体(400)的籽晶(110)；
    环形导流板(200)，所述环形导流板(200)设置于所述坩埚(100)内，所述环形导流板(200)的底端连接于所述坩埚(100)的侧壁，顶端向所述籽晶(110)延伸且与所述籽晶(110)的边缘之间具有间隙(106)，所述环形导流板(200)、所述籽晶(110)、所述坩埚(100)的侧壁、所述坩埚(100)的底壁共同围成第一腔室(102)，所述环形导流板(200)、所述籽晶(110)、所述坩埚(100)的侧壁及所述坩埚(100)的顶壁共同围成第二腔室(104)，所述第一腔室(102)和所述第二腔室(104)通过所述间隙(106)连通，所述环形导流板(200)上设置有用于平衡所述第一腔室(102)和所述第二腔室(104)压力的均压结构；
    所述均压结构包括开设于所述环形导流板(200)上的气孔(212)，所述气孔(212)连通所述第一腔室(102)和所述第二腔室(104)，所述环形导流板(200)包括呈夹角连接的第一环形部(210)和第二环形部(220)，所述第一环形部(210)远离所述第二环形部(220)的一端与所述坩埚(100)的内壁连接，所述第二环形部(220)远离所述第一环形部(210)的一端向所述籽晶(110)延伸，所述气孔(212)开设于所述第一环形部(210)。
  2. 根据权利要求1所述的生长高质量碳化硅晶体的装置，其特征在于，
    所述气孔(212)的数量为多个，且多个所述气孔(212)围绕所述坩埚(100)的轴线设置成一圈或者多圈。
  3. 根据权利要求2所述的生长高质量碳化硅晶体的装置，其特征在于，
    多个所述气孔(212)围绕所述坩埚(100)的轴线设置成多圈，多圈所述气孔(212)沿所述坩埚(100)的径向间隔排布，任意相邻两圈所述气孔(212)在所述坩埚(100)的径向上错开。
  4. 根据权利要求1所述的生长高质量碳化硅晶体的装置，其特征在于，
    所述第一环形部(210)呈平板状且与所述坩埚(100)的轴线垂直，所述第一环形部(210)的外周壁与所述坩埚(100)的侧壁连接，所述第二环形部(220)呈中空圆柱状或者中空圆台状，所述第二环形部(220)的底端与所述第一环形部(210)的内周壁连接，顶端向所述籽晶(110)延伸。
  5. 根据权利要求1所述的生长高质量碳化硅晶体的装置，其特征在于，
    所述气孔(212)朝向所述籽晶(110)倾斜设置，所述气孔(212)的孔径沿靠近所述籽晶(110)的方向逐渐减小。
  6. 根据权利要求1所述的生长高质量碳化硅晶体的装置，其特征在于，
    所述均压结构包括放置于所述第二腔室(104)内的碳化硅粉末(300)。
  7. 根据权利要求1所述的生长高质量碳化硅晶体的装置，其特征在于，
    所述坩埚(100)上位于所述第二腔室(104)的外周处设置有至少一个浓度调节通孔(108)。
  8. 根据权利要求1所述的生长高质量碳化硅晶体的装置，其特征在于，
    所述第一环形部(210)包括若干层上下分布的子环形部(214)，所述气孔(212)分布于每一个子环形部(214)上。
  9. 根据权利要求8所述的生长高质量碳化硅晶体的装置，其特征在于，
    沿着长晶组分的传输方向，若干层所述子环形部(214)上具有孔径渐小的气孔(212)。
  10. 一种生长高质量碳化硅晶体的方法，其特征在于，
    基于权利要求1所述的生长高质量碳化硅晶体的装置，包括：
    在所述坩埚(100)内放入碳化硅粉末(300)；
    对所述坩埚(100)抽气后充入惰性气体；
    加热所述坩埚(100)，以使所述坩埚(100)内部温度升高至2000-2600℃；
    再次对所述坩埚(100)抽气，以使所述坩埚(100)内部压力降低至0.01～4E3Pa；
    所述碳化硅粉末(300)升华并在所述籽晶(110)上开始生长碳化硅晶体(400)；
    所述碳化硅晶体(400)生长10-300h后，重新对所述坩埚(100)充入惰性气体，以使所述坩埚(100)内部压力升高至5E3～1E5Pa；
    所述碳化硅晶体(400)生长结束后停止对所述坩埚(100)加热，等到所述坩埚(100)内部温度降低至室温后，将所述碳化硅晶体(400)取出所述坩埚(100)。
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