WO2025010594A1 - 一种声学装置 - Google Patents

一种声学装置 Download PDF

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Publication number
WO2025010594A1
WO2025010594A1 PCT/CN2023/106612 CN2023106612W WO2025010594A1 WO 2025010594 A1 WO2025010594 A1 WO 2025010594A1 CN 2023106612 W CN2023106612 W CN 2023106612W WO 2025010594 A1 WO2025010594 A1 WO 2025010594A1
Authority
WO
WIPO (PCT)
Prior art keywords
magnetic field
acoustic device
sensor
output state
magnetic
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/CN2023/106612
Other languages
English (en)
French (fr)
Inventor
邓文俊
黄雨佳
袁永帅
梁显荣
周文兵
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Shenzhen Shokz Co Ltd
Original Assignee
Shenzhen Shokz Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Shenzhen Shokz Co Ltd filed Critical Shenzhen Shokz Co Ltd
Priority to CN202380081020.3A priority Critical patent/CN120266492A/zh
Priority to PCT/CN2023/106612 priority patent/WO2025010594A1/zh
Priority to EP23944617.2A priority patent/EP4626020A4/en
Publication of WO2025010594A1 publication Critical patent/WO2025010594A1/zh
Priority to US19/268,990 priority patent/US20250344011A1/en
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04R—LOUDSPEAKERS, MICROPHONES, GRAMOPHONE PICK-UPS OR LIKE ACOUSTIC ELECTROMECHANICAL TRANSDUCERS; ELECTRIC HEARING AIDS; PUBLIC ADDRESS SYSTEMS
    • H04R1/00—Details of transducers, loudspeakers or microphones
    • H04R1/10—Earpieces; Attachments therefor ; Earphones; Monophonic headphones
    • H04R1/1041—Mechanical or electronic switches, or control elements
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R33/00—Arrangements or instruments for measuring magnetic variables
    • G01R33/02—Measuring direction or magnitude of magnetic fields or magnetic flux
    • G01R33/06—Measuring direction or magnitude of magnetic fields or magnetic flux using galvano-magnetic devices
    • G01R33/07—Hall effect devices
    • G01R33/072—Constructional adaptation of the sensor to specific applications
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R33/00—Arrangements or instruments for measuring magnetic variables
    • G01R33/02—Measuring direction or magnitude of magnetic fields or magnetic flux
    • G01R33/06—Measuring direction or magnitude of magnetic fields or magnetic flux using galvano-magnetic devices
    • G01R33/09—Magnetoresistive devices
    • G01R33/091—Constructional adaptation of the sensor to specific applications
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R33/00—Arrangements or instruments for measuring magnetic variables
    • G01R33/02—Measuring direction or magnitude of magnetic fields or magnetic flux
    • G01R33/06—Measuring direction or magnitude of magnetic fields or magnetic flux using galvano-magnetic devices
    • G01R33/09—Magnetoresistive devices
    • G01R33/093—Magnetoresistive devices using multilayer structures, e.g. giant magnetoresistance sensors
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R33/00—Arrangements or instruments for measuring magnetic variables
    • G01R33/02—Measuring direction or magnitude of magnetic fields or magnetic flux
    • G01R33/06—Measuring direction or magnitude of magnetic fields or magnetic flux using galvano-magnetic devices
    • G01R33/09—Magnetoresistive devices
    • G01R33/096—Magnetoresistive devices anisotropic magnetoresistance sensors
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R33/00—Arrangements or instruments for measuring magnetic variables
    • G01R33/02—Measuring direction or magnitude of magnetic fields or magnetic flux
    • G01R33/06—Measuring direction or magnitude of magnetic fields or magnetic flux using galvano-magnetic devices
    • G01R33/09—Magnetoresistive devices
    • G01R33/098—Magnetoresistive devices comprising tunnel junctions, e.g. tunnel magnetoresistance sensors
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04R—LOUDSPEAKERS, MICROPHONES, GRAMOPHONE PICK-UPS OR LIKE ACOUSTIC ELECTROMECHANICAL TRANSDUCERS; ELECTRIC HEARING AIDS; PUBLIC ADDRESS SYSTEMS
    • H04R1/00—Details of transducers, loudspeakers or microphones
    • H04R1/10—Earpieces; Attachments therefor ; Earphones; Monophonic headphones
    • H04R1/1025—Accumulators specially adapted for earpieces; Arrangements specially adapted for charging thereof
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04R—LOUDSPEAKERS, MICROPHONES, GRAMOPHONE PICK-UPS OR LIKE ACOUSTIC ELECTROMECHANICAL TRANSDUCERS; ELECTRIC HEARING AIDS; PUBLIC ADDRESS SYSTEMS
    • H04R1/00—Details of transducers, loudspeakers or microphones
    • H04R1/10—Earpieces; Attachments therefor ; Earphones; Monophonic headphones
    • H04R1/105—Earpiece supports, e.g. ear hooks
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04R—LOUDSPEAKERS, MICROPHONES, GRAMOPHONE PICK-UPS OR LIKE ACOUSTIC ELECTROMECHANICAL TRANSDUCERS; ELECTRIC HEARING AIDS; PUBLIC ADDRESS SYSTEMS
    • H04R29/00—Monitoring arrangements; Testing arrangements
    • H04R29/001—Monitoring arrangements; Testing arrangements for loudspeakers
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04R—LOUDSPEAKERS, MICROPHONES, GRAMOPHONE PICK-UPS OR LIKE ACOUSTIC ELECTROMECHANICAL TRANSDUCERS; ELECTRIC HEARING AIDS; PUBLIC ADDRESS SYSTEMS
    • H04R3/00—Circuits for transducers
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04R—LOUDSPEAKERS, MICROPHONES, GRAMOPHONE PICK-UPS OR LIKE ACOUSTIC ELECTROMECHANICAL TRANSDUCERS; ELECTRIC HEARING AIDS; PUBLIC ADDRESS SYSTEMS
    • H04R2460/00—Details of hearing devices, i.e. of ear- or headphones covered by H04R1/10 or H04R5/033 but not provided for in any of their subgroups, or of hearing aids covered by H04R25/00 but not provided for in any of its subgroups
    • H04R2460/03—Aspects of the reduction of energy consumption in hearing devices
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04R—LOUDSPEAKERS, MICROPHONES, GRAMOPHONE PICK-UPS OR LIKE ACOUSTIC ELECTROMECHANICAL TRANSDUCERS; ELECTRIC HEARING AIDS; PUBLIC ADDRESS SYSTEMS
    • H04R2460/00—Details of hearing devices, i.e. of ear- or headphones covered by H04R1/10 or H04R5/033 but not provided for in any of their subgroups, or of hearing aids covered by H04R25/00 but not provided for in any of its subgroups
    • H04R2460/13—Hearing devices using bone conduction transducers

Definitions

  • the present specification relates to the field of acoustic technology, and in particular to an acoustic device.
  • wearing detection sensors are widely used in products such as headphones.
  • a typical application is to automatically wake up the system when it recognizes that the user is wearing headphones, and automatically enter standby mode when it recognizes that the user has taken off the headphones, thereby reducing power consumption and extending usage time. At the same time, it saves users' operating steps and greatly improves the user experience.
  • the mainstream wear detection sensors are based on infrared sensors, capacitive contact sensors and other solutions.
  • the former has a complex structure and system, and the latter has low stability. Both have the problem of low recognition accuracy.
  • traditional wear detection solutions cannot achieve ideal detection results.
  • the acoustic device comprises: a speaker housing, wherein the speaker housing contains at least one magnetic element; and a magnetic field sensor configured to read a spatial magnetic field; wherein when the relative position of the magnetic element and the magnetic field sensor changes, causing the spatial magnetic field to change, the output state of the acoustic device changes.
  • the magnetic field sensor includes at least two magnetic field sensitive elements.
  • the at least two magnetic field sensitive components are arranged in parallel.
  • the acoustic device is provided with a mainboard compartment, in which a circuit mainboard and/or a battery mainboard is accommodated, and the at least two magnetic field sensitive components are arranged on the circuit mainboard and/or the battery mainboard and are located on the half side mainboard close to the speaker housing.
  • the at least two magnetic field sensitive components do not overlap with each other.
  • the distance between the at least two magnetic field sensitive components ranges from 0.1 mm to 20 mm.
  • the distance between the at least two magnetic field sensitive components is 1 mm to 10 mm.
  • the acoustic device is provided with a magnetic interface, and the minimum distance between the magnetic interface and the at least two magnetic field sensitive components is greater than or equal to 5 mm.
  • the acoustic device further includes a proximity sensor, the acoustic device is provided with a mainboard compartment, and the proximity sensor is arranged on a side of the speaker housing and/or the mainboard compartment close to a human body.
  • the acoustic device comprises an ear hook, and the speaker housing and the magnetic field sensor are connected via the ear hook.
  • the speaker housing and the magnetic field sensor are clamped on both sides of the auricle by the ear hook.
  • the ear hook includes a first ear hook and a second ear hook
  • the speaker housing includes a first speaker housing and a second speaker housing
  • the acoustic device further includes a rear hook; wherein the first ear hook is connected to the first speaker housing, the second ear hook is connected to the second speaker housing, and the rear hook connects the first ear hook and the second ear hook.
  • the acoustic device includes a control circuit configured to control an output state of the acoustic device according to a change in the spatial magnetic field.
  • the magnetic field sensor reads the magnetic field strength of the spatial magnetic field in a specific direction, and the control circuit controls the output state of the acoustic device according to the magnetic field strength.
  • control circuit determines a threshold interval in which the magnetic field strength is located, and controls an output state of the acoustic device according to the threshold interval in which the magnetic field strength is located.
  • the threshold interval includes a first threshold interval and a second threshold interval.
  • the acoustic device When the magnetic field strength is in the first threshold interval, the acoustic device is in a first output state; when the magnetic field strength is in the second threshold interval, the acoustic device is in a second output state.
  • the magnetic field sensor includes at least two magnetic field sensors
  • the control circuit performs differential processing on the spatial magnetic field read by the at least two magnetic field sensors, and controls the output state of the acoustic device according to the differential result.
  • the acoustic device further includes a proximity sensor, and the control circuit controls the output state of the acoustic device according to the detection result of the proximity sensor and the spatial magnetic field read by the magnetic field sensor.
  • the magnetic field sensor includes a Hall sensor, an AMR sensor, a GMR sensor, or a TMR sensor.
  • One of the embodiments of this specification further provides a headset, comprising: the acoustic device described in any embodiment of this specification, wherein the control circuit identifies the wearing state of the headset according to the output state of the acoustic device.
  • FIG1 is a schematic diagram of an acoustic device according to some embodiments of the present specification.
  • FIG2 is another schematic diagram of an acoustic device according to some embodiments of the present specification.
  • FIG. 3 is a schematic diagram showing that the output state of the acoustic device is a second output state according to some embodiments of this specification;
  • FIG4 is another schematic diagram showing that the output state of the acoustic device is a second output state according to some embodiments of this specification;
  • FIG5 is another schematic diagram of an acoustic device according to some embodiments of the present specification.
  • FIG6 is another schematic diagram of an acoustic device according to some embodiments of the present specification.
  • FIG7A is a schematic diagram of a single magnetic field sensor according to some embodiments of this specification.
  • FIG7B is a schematic diagram of a dual magnetic field sensor according to some embodiments of the present specification.
  • FIG8 is a schematic diagram of a magnetic interface according to some embodiments of this specification.
  • FIG9A is a schematic diagram of the positions of two magnetic field sensitive components according to some embodiments of the present specification.
  • FIG9B is a schematic diagram of verification results of two magnetic field sensitive components according to some embodiments of this specification.
  • FIG. 10 is a schematic diagram of a proximity sensor placed in a mainboard compartment according to some embodiments of this specification.
  • FIG. 11 is a schematic diagram of a proximity sensor placed in a speaker compartment according to some embodiments of the present specification.
  • system means for distinguishing different components, elements, parts, portions or assemblies at different levels.
  • device means for distinguishing different components, elements, parts, portions or assemblies at different levels.
  • unit means for distinguishing different components, elements, parts, portions or assemblies at different levels.
  • the words can be replaced by other expressions.
  • the acoustic device includes a speaker housing and a magnetic field sensor, wherein the speaker housing contains at least one magnetic element, and the magnetic field sensor can read the spatial magnetic field.
  • the output state of the acoustic device changes.
  • the output state of the acoustic device refers to the functional state of the acoustic device.
  • the output state of the acoustic device may include but is not limited to playing audio, pausing audio, entering standby mode, turning on, turning off, etc.
  • a magnetic field sensor is provided in the acoustic device, and the magnetic field sensor reads the spatial magnetic field.
  • the output state of the acoustic device is controlled according to the changes in the spatial magnetic field read by the magnetic field sensor, thereby reducing the power consumption of the acoustic device, extending the use time of the acoustic device, and improving the interactive experience.
  • FIG. 1 is a schematic diagram of an acoustic device according to some embodiments of the present specification.
  • the acoustic device 100 may include a speaker housing 110 and a magnetic field sensor 121.
  • the speaker housing 110 includes at least one magnetic element, and the magnetic field sensor 121 is used to read a spatial magnetic field.
  • the speaker housing 110 may be a shell structure for accommodating and protecting magnetic elements.
  • the speaker housing 110 may be in the shape of a cuboid, a quasi-cuboid, a cylinder, an ellipsoid, or other regular and irregular three-dimensional structures, and the speaker housing 110 may be designed as an integrated or split type.
  • the material of the speaker housing 110 may be metal, plastic, ceramic, etc., so that the speaker housing 110 has good strength, wear resistance, and anti-interference performance, and effectively protects the internal electronic components (e.g., magnetic elements, the vibration assembly 111 described below).
  • the speaker housing 110 can also be used to accommodate a vibration component 111.
  • the vibration component 111 can be a speaker in the acoustic device 100 that converts electrical signals into sound.
  • the types of vibration components 111 may include dynamic, electromagnetic, capacitive, piezoelectric, etc.
  • the dynamic/moving iron vibration component 111 includes a coil and a permanent magnet that can be used as a magnetic source. When current passes through the coil, it interacts with the magnetic field generated by the magnetic source, thereby causing the diaphragm to vibrate and emit sound; the electromagnetic vibration component The component 111 includes an electromagnetic element that can be used as a magnetic source.
  • the capacitive vibration component 111 When powered on, the coil generates a magnetic field, causing the electromagnetic element to attract or repel the diaphragm, thereby generating vibration and emitting sound.
  • the capacitive vibration component 111 does not include a magnetic source, and uses two parallel electrode plates to drive the diaphragm.
  • the diaphragm is usually made of insulating material and coated with conductive material on both sides.
  • the generated electric field force drives the diaphragm to vibrate and emit sound.
  • the piezoelectric vibration component 111 does not include a magnetic source, and uses piezoelectric ceramics or piezoelectric polymers as the diaphragm. When a voltage is applied, the shape of the piezoelectric material changes, thereby generating vibration and emitting sound.
  • the magnetic element can be used to cooperate with the magnetic field sensor 121 to identify the change in the relative position of the magnetic element and the magnetic field sensor 121.
  • the magnetic element may include a magnetic element used as a magnetic source for the vibration component 111.
  • the magnetic source may refer to a magnetic element that can generate a spatial magnetic field and is located in the vibration component 111.
  • the magnetic source includes but is not limited to ordinary magnetic elements, electromagnetic elements, permanent magnets, etc. For example, if the vibration component 111 is a moving coil type, the magnetic element may be a permanent magnet; if the vibration component 111 is an electromagnetic type, the magnetic element may be an electromagnetic element.
  • the magnetic field generated by the magnetic element set as a magnetic source in the vibration component 111 can be detected by the magnetic field sensor 121, thereby realizing the judgment of the relative position of the magnetic element and the magnetic field sensor 121.
  • the piezoelectric vibration component 111 since its own structure does not have a magnetic element, one or more permanent magnets separately set in the speaker housing 110 can be used as a magnetic source.
  • the dynamic coil/moving iron type vibration component 111 since its own structure has a permanent magnet, the permanent magnet inside the dynamic coil/moving iron type vibration component 111 can be used as a magnetic source. It should be noted that the number of magnetic elements in the speaker housing 110 can be one or more.
  • the speaker housing 110 may not be provided with a magnetic element, or one or more magnetic elements may be provided in the speaker housing 110.
  • the speaker housing 110 needs to be provided with at least one magnetic element.
  • the magnetic field sensor 121 can be used to read the spatial magnetic field.
  • the spatial magnetic field may refer to a composite magnetic field formed by the magnetic elements carried by the components of the acoustic device 100 and the external magnetic field.
  • the spatial magnetic field may be a composite magnetic field composed of the first speaker 111-1, the second speaker 111-2, the magnetic interface 123 and the external geomagnetic field described below.
  • the magnetic field sensor 121 can read the change in the magnetic field intensity of the surrounding spatial magnetic field when the magnetic element and the magnetic field sensor 121 are in different relative positions.
  • the acoustic device 100 may further include a control circuit, which can control the output state of the acoustic device 100 based on the change in the spatial magnetic field intensity.
  • the magnetic element carried by the vibration component 111 i.e., the speaker described below
  • a separately arranged magnetic element can be used as a magnetic source in conjunction with the magnetic field sensor.
  • the relative positions of the various parts of the acoustic device 100 change, resulting in a change in the distance and/or angle between the magnetic element in the vibration assembly 111 and the magnetic field sensor 121, and the magnetic field strength measured by the magnetic field sensor 121 will also change accordingly.
  • the control circuit can control the output state of the acoustic device 100 according to the change in the spatial magnetic field detected by the magnetic field sensor 121.
  • the distance and angle of the magnetic source of the acoustic device 100 relative to the magnetic field sensor 121 change, and the change will cause a change in the spatial magnetic field, thereby changing the total magnetic field strength or component magnetic field strength at the magnetic field sensor 121.
  • the control circuit can monitor the change in the magnetic field strength at the magnetic field sensor 121, and control the output state of the acoustic device 100 according to a pre-set magnetic field strength threshold interval. The description of controlling the output state of the acoustic device 100 according to the threshold interval where the magnetic field strength is located can be found below and will not be repeated here.
  • the acoustic device 100 may further include an ear hook 130.
  • the ear hook 130 is a component that connects the speaker housing 110 and the magnetic field sensor 121, and is used to fix the acoustic device 100 on the user's ear.
  • the ear hook 130 may be an arc-shaped structure that matches the connection between the human auricle and the head T. When the user wears the acoustic device 100, the ear hook needs to be hung at the connection between the auricle and the head T to keep the acoustic device fixed on the ear.
  • the speaker housing 110 and the magnetic field sensor 121 of the acoustic device 100 are respectively located on the front and back sides of the auricle to generate a clamping force on the user's ear to maintain the wearing stability of the acoustic device 100.
  • the ear hook 130 may be made of a flexible, lightweight, and wear-resistant material, such as silicone, soft plastic, titanium alloy, or stainless steel.
  • the speaker housing 110 and the magnetic field sensor 121 can be directly connected through the ear hook 130.
  • the magnetic field sensor 121 can be coated with a flexible material (e.g., silica gel, etc.), and the coated magnetic field sensor 121 is directly connected to the speaker housing 110 through the ear hook 130.
  • the speaker housing 110 and the magnetic field sensor 121 can be indirectly connected through the ear hook 130.
  • the acoustic device 100 can also include a functional part housing 120, and the magnetic field sensor 121 is arranged in the functional part housing 120, and the magnetic field sensor 121 is connected to the speaker housing 110 through the functional part housing 120 and the ear hook 130.
  • the functional part housing 120 can also be used to accommodate other components of the acoustic device 100, such as a battery, a circuit board, etc.
  • the functional part housing 120 can be cylindrical, rectangular or other custom shapes to meet the requirements of the internal component layout.
  • the material of the functional part housing 120 can be selected from ABS plastic, metal alloy or other suitable materials to ensure lightness, durability and comfortable wearing.
  • the magnetic field sensor 121 can be placed in the mainboard compartment or battery compartment of the acoustic device 100 (the mainboard compartment or battery compartment can refer to the compartment body formed by the functional component housing 120).
  • the magnetic field sensor 121 is placed in the mainboard compartment, directly mounted on the mainboard surface and close to the vibration component 111, or mounted on a separate PCB or FPC board, and then connected to the mainboard through a lead, thereby accessing the acoustic device control chip.
  • the magnetic field sensor 121 can also be placed on the ear hook 130 or the rear hook 140 described below.
  • the magnetic field sensor 121 is placed in the main board compartment or battery compartment of the acoustic device 100. No additional leads are needed, making it closer to the vibration component 111 and enabling the acoustic device itself to remain relatively stable.
  • the magnetic field sensor 121 may include a Hall sensor, an anisotropic magnetoresistive sensor (AMR sensor), a giant magnetoresistive sensor (GMR sensor), or a tunnel magnetoresistive sensor (TMR sensor).
  • AMR sensor anisotropic magnetoresistive sensor
  • GMR sensor giant magnetoresistive sensor
  • TMR sensor tunnel magnetoresistive sensor
  • the power consumption of the acoustic device 100 can be reduced and the use time of the acoustic device 100 can be extended.
  • the acoustic device 100 described in the embodiment of this specification can be applied to wearable devices such as headphones, hearing aids, glasses, etc.
  • the control circuit can identify the wearing state of wearable devices such as headphones, hearing aids, glasses, etc. according to the output state of the acoustic device.
  • the acoustic device 100 when the headphones are in a wearing state and a non-wearing state, the relative position between the magnetic element and the magnetic field sensor 121 will change.
  • the output state of the acoustic device 100 changes, and the change in the output state can correspond to the change in the wearing state of the headphones.
  • the output state of the acoustic device 100 when the headphones are in a non-wearing state, the output state of the acoustic device 100 can be a first output state, and the first output state can refer to a function-off state, such as power off, standby, and stop playing audio; when the headphones are in a wearing state, the output state of the acoustic device 100 can be a second output state, and the second output state can refer to a function-working state, such as power on and playing audio.
  • a function-off state such as power off, standby, and stop playing audio
  • the output state of the acoustic device 100 when the headphones are in a wearing state, the output state of the acoustic device 100 can be a second output state, and the second output state can refer to a function-working state, such as power on and playing audio.
  • FIG. 2 is another schematic diagram of an acoustic device according to some embodiments of the present specification.
  • the magnetic field sensor 121 reads the magnetic field strength of the spatial magnetic field in a specific direction, and the control circuit controls the output state of the acoustic device 100 according to the magnetic field strength read by the magnetic field sensor 121.
  • the specific direction may include a thickness direction X, a major axis direction Y, and a minor axis direction Z.
  • the X, Y, and Z axes are three axes of a coordinate system established with the magnetic field sensor 121 itself as the origin, the thickness direction X is parallel to the thickness direction of the magnetic field sensor, and the major axis direction Y and the minor axis direction Z are orthogonal to each other.
  • the major axis direction Y may be defined as the direction with the largest extension dimension in the shape of the magnetic field sensor 121 (for example, when the shape of the magnetic field sensor 121 is a rectangle or a rectangle, the major axis direction is the length direction of the rectangle or the rectangle), and the minor axis direction Z may be defined as the direction perpendicular to the major axis direction Y in the shape of the magnetic field sensor 121 (for example, when the shape of the magnetic field sensor 121 is a rectangle or a rectangle, the minor axis direction is the width direction of the rectangle or the rectangle).
  • the specific directions mentioned above may also be any other vector directions in the above coordinate system.
  • the magnetic element as a magnetic source in the vibration component 111 can generate a spatial magnetic field, and the position of the magnetic element relative to the magnetic field sensor 121 changes.
  • the acoustic device 100 is applied to headphones.
  • the headphones are switched between the natural state (i.e., the non-wearing state) and the wearing state, the position of the magnetic element relative to the magnetic field sensor 121 changes, and the position change causes a change in the spatial magnetic field.
  • the change in the spatial magnetic field can be a change in the total magnetic field strength, that is, a change in the vector sum of the magnetic field strengths in the thickness direction X, the long axis direction Y, and the short axis direction Z; the change in the spatial magnetic field can also be a change in the component magnetic field strength, that is, a change in the magnetic field strength in the thickness direction X, the long axis direction Y, and the short axis direction Z.
  • the relative distance between the magnetic element as a magnetic source in the vibration component 111 and the magnetic field sensor 121 is relatively fixed, and the distance between the two does not change much, so the change in the vector sum of the magnetic field strengths in the thickness direction X, the long axis direction Y, and the short axis direction Z is not large, and accordingly, the change in the total magnetic field strength is not large.
  • the component magnetic field intensity of one axis e.g., thickness direction X
  • the component magnetic field intensity of another axis e.g., long axis direction Y or short axis direction Z
  • the change of the component magnetic field intensity in the thickness direction X, long axis direction Y, and short axis direction Z is greater than the change of the total magnetic field intensity. Based on this, the output state of the acoustic device 100 can be controlled by reading the component magnetic field intensity in a specific direction through the magnetic field sensor 121.
  • the position of the magnetic element relative to the magnetic field sensor 121 changes, and the change in the component magnetic field strength of the spatial magnetic field in a specific direction is relatively large.
  • the output state of the acoustic device 100 is controlled according to the change in the magnetic field strength in the specific direction, which can further improve the accuracy of the output state of the acoustic device 100.
  • the threshold interval may refer to the range of values of the magnetic field strength of the magnetic field sensor in a specific direction (or the range of values of the difference in magnetic field strength between two magnetic field sensors or two magnetic field sensitive parts in the same direction in the following text), which is used to determine the output state of the acoustic device 100 (for example, the first output state or the second output state).
  • the control circuit may determine the threshold interval in which the magnetic field strength is located, and control the output state of the acoustic device 100 according to the threshold interval in which the magnetic field strength is located.
  • the threshold interval may include a first threshold interval and a second threshold interval. When the magnetic field strength is in different threshold intervals, the output state of the acoustic device is different.
  • the first threshold interval and the second threshold interval please refer to the following and will not be repeated here.
  • the output state of the acoustic device 100 is different if the threshold interval of the magnetic field strength is different.
  • Different acoustic devices 100 have different threshold intervals, and the threshold interval can be determined according to the factory settings of the acoustic device 100. Specifically, when the acoustic device 100 leaves the factory, a universal threshold interval can be set, and each acoustic device 100 can be simply calibrated using an artificial head to determine the factory initial value, and the threshold interval is subsequently determined based on the initial value. For example, the acoustic device 100 is in the first output state (or the acoustic device 100 is applied to headphones, and the headphones are in a non-wearing state).
  • the magnetic field sensor 121 is used to measure the magnetic field strength of the acoustic device 100 in a specific direction (for example, the X-axis, Y-axis, and Z-axis directions), and the magnetic field strength is used as the first initial value, and then A certain range is expanded based on the first initial value and determined as the first threshold interval, and the first threshold interval is the threshold interval corresponding to the magnetic field strength of the acoustic device 100 in the first output state (or the earphone is in a non-wearing state).
  • the output state of the acoustic device 100 can be controlled to be the first output state (or the earphone is judged to be in a non-wearing state).
  • the magnetic field sensor 121 is used to measure the magnetic field strength of the acoustic device 100 in a specific direction, and the magnetic field strength is used as the second initial value, and then the second threshold interval is determined according to the second initial value.
  • the second threshold interval is the threshold interval corresponding to the magnetic field strength of the acoustic device 100 in the second output state (or the earphone is in a wearing state).
  • the output state of the acoustic device 100 can be controlled to be the second output state (or the earphone is judged to be in a non-wearing state).
  • the specific direction in the first output state is consistent with the specific direction in the second output state.
  • the factors affecting the threshold interval include, but are not limited to, the structure of the acoustic device 100, the type of acoustic device (bone conduction, air conduction, bone-air conduction), the position of the magnetic field sensor 121, the placement of the magnetic field sensor 121, etc.
  • the structure of the acoustic device 100 may include a rear-hanging type, an open air conduction type (a single-ear acoustic device as shown in FIG6 ), etc.
  • the position of the magnetic field sensor 121 may include an end close to or far from the circuit board, close to the connection between the ear hook 130 and the functional part housing 120, etc.; the placement of the magnetic field sensor 121 may include whether the magnetic field sensor 121 is placed horizontally, vertically, or tilted on the PCB, etc.
  • the distance and angle between the magnetic element as a magnetic source in the vibration assembly 111 and the magnetic field sensor 121 change greatly when the output state of the acoustic device 100 is different (or the acoustic device 100 is applied to headphones, and the headphones are in the wearing and non-wearing state), resulting in significant changes in the component magnetic field strength in the thickness direction X and the long axis direction Y.
  • the component magnetic field strength in the thickness direction X increases, while the component magnetic field strength in the long axis direction Y can decrease; and when the output state of the acoustic device 100 is the first output state (or the headphones are in the non-wearing state), the component magnetic field strength in the thickness direction X decreases, and the component magnetic field strength in the long axis direction Y increases; the component magnetic field strength in the short axis direction Z changes relatively little.
  • the output state of the acoustic device 100 is controlled by determining the threshold interval of the magnetic field strength, so that the power consumption of the acoustic device 100 can be reduced and the use time can be extended. For example, when the acoustic device 100 is not in use (such as the earphone is not worn), the output state of the acoustic device 100 can be controlled to be the first output state; when the acoustic device 100 is in use (such as the earphone is worn), the output state of the acoustic device 100 is controlled to be the second output state.
  • FIG. 3 is a schematic diagram showing that the output state of the acoustic device is a second output state according to some embodiments of the present specification.
  • the threshold interval may include a first threshold interval and a second threshold interval.
  • the acoustic device 100 When the magnetic field strength is in the first threshold interval, the acoustic device 100 is in the first output state (when the acoustic device 100 is applied to the earphone, the corresponding earphone is in a non-wearing state); when the magnetic field strength is in the second threshold interval, the acoustic device 100 is in the second output state (when the acoustic device 100 is applied to the earphone, the corresponding earphone is in the first wearing state, i.e., the ear-hanging state).
  • the magnetic field strength range corresponding to the first threshold interval is below the boundary, and the output state of the acoustic device 100 is the first output state (or represents that the earphone is in a non-wearing state); the magnetic field strength range corresponding to the second threshold interval is above the boundary, and the output state of the acoustic device 100 is the second output state (or represents that the earphone is in the first wearing state).
  • a buffer zone (also called a first buffer zone) can be set between the first threshold interval and the second threshold interval to cope with external magnetic field interference or errors of the magnetic field sensor 121.
  • the magnetic field strength of the boundary between the first threshold interval and the second threshold interval is W1.
  • a magnetic field strength range with the boundary W1 as the midpoint can be set as a first buffer zone, for example [W1-A1, W1+A1].
  • the control circuit controls the output state of the acoustic device 100 to be determined, rather than specifically controlling the output state of the acoustic device 100 to be the first output state or the second output state.
  • the first threshold interval refers to a value range of the magnetic field intensity in a specific direction, and the output state of the acoustic device 100 corresponding to the range is the first output state.
  • the second threshold interval refers to the value range of the magnetic field strength in a specific direction, and the range corresponds to the output state of the acoustic device 100 being the second output state.
  • the first wearing state refers to the ear-hanging state in which the acoustic device 100 or the earphone is hung on the head T and the acoustic device is normally worn on the ear.
  • the output state of the acoustic device 100 can be accurately controlled by different threshold intervals of the magnetic field strength.
  • FIG. 4 is another schematic diagram showing that the output state of the acoustic device is a second output state according to some embodiments of the present specification.
  • the threshold interval may further include a third threshold interval.
  • the third threshold interval refers to a range of values of the magnetic field strength in a specific direction, which corresponds to when the acoustic device 100 is applied to headphones, the acoustic device 100 is in the second output state and corresponds to the second wearing state of the headphones.
  • the second wearing state refers to the neck-hanging state of hanging the acoustic device 100 or the headphones on the neck B. That is, when the acoustic device 100 is in the second output state, there can be two wearing states corresponding to the headphones, a first wearing state and a second wearing state.
  • the magnetic field strength range corresponding to the second threshold interval is below the boundary, representing the first wearing state; the magnetic field strength range corresponding to the third threshold interval is above the boundary, representing the second wearing state.
  • a buffer zone also called a second buffer zone
  • W2 the magnetic field strength of the boundary between the second threshold interval and the third threshold interval
  • a magnetic field strength range with the boundary W2 as the midpoint can be set as the second buffer zone, for example [W2-A2, W2+A2].
  • the control circuit judges the wearing state of the headset as pending, rather than the exact first wearing state or the second wearing state.
  • effective identification between the neck-hanging state and the ear-hanging state of the headset can be achieved by setting the third threshold interval.
  • the acoustic device 100 may include a first speaker 111-1 and a second speaker 111-2.
  • the second speaker 111-2 contains a magnetic element
  • the distance between the second speaker 111-2 and the magnetic field sensor 121 will also affect the magnetic field distribution.
  • the magnetic field intensity detected by the magnetic field sensor 121 is in the first threshold interval, that is, when the acoustic device 100 is in the first output state
  • the first speaker 111-1 and the second speaker 111-2 are both close to the magnetic field sensor 121 (generally less than 5 cm)
  • the magnetic induction intensity generated by the first speaker 111-1 and the second speaker 111-2 at the magnetic field sensor 121 is B01 and B02 respectively.
  • the total magnetic field intensity B0 is obtained by vector superposition of B01 and B02, wherein the total magnetic field intensity B0 can be decomposed into three orthogonal component magnetic field intensities B0x, B0y, and B0z corresponding to the X, Y, and Z axis directions of the magnetic field sensor coordinate system.
  • the second speaker 111-2 when the magnetic field strength detected by the magnetic field sensor 121 is in the second threshold interval, that is, the acoustic device 100 is in the second output state, the second speaker 111-2 is away from the magnetic field sensor 121 (the distance is usually greater than 14 cm), and the magnetic induction intensity generated by the first speaker 111-1 and the second speaker 111-2 at the magnetic field sensor 121 changes significantly.
  • the total magnetic field strength obtained by superimposing the three orthogonal component magnetic field strength vectors in the X, Y, and Z axis directions is B1, and the axial components are B1x, B1y, and B1z, respectively.
  • a first angle is formed between the ear hook 130 and the functional part housing 120, and the value of the first angle corresponding to the first threshold interval is greater than the value of the first angle corresponding to the second threshold interval.
  • the first angle corresponding to the first threshold interval may refer to the angle between the ear hook 130 and the long axis direction of the functional part housing 120 (the dotted line in FIG.
  • the first angle corresponding to the second threshold interval refers to the angle between the ear hook 130 and the long axis direction of the functional part housing 120 (the dotted line in FIG. 3) when the magnetic field intensity is in the second threshold interval, that is, the output state of the acoustic device 100 is the second output state (corresponding to the earphone being in a wearing state).
  • the spatial angle between the ear hook 130 and the functional part housing 120 can be set to ⁇ 0; when the magnetic field intensity detected by the magnetic field sensor 121 is in the second threshold interval, there is a certain clamping force between the first speaker 111-1 and the second speaker 111-2 and the temporal bone, so that the ear hook 130 is deflected to a certain extent, and the spatial angle between the ear hook 130 and the functional part housing 120 becomes ⁇ 1, as shown in FIG3 . Therefore, the first angle corresponding to the first threshold interval is greater than the first angle corresponding to the second threshold interval.
  • the ear hook 130 (i.e., the portion of the ear hook 130 between the connection between the ear hook 130 and the functional part housing 120 and the connection between the ear hook 130 and the functional part housing 120) can be approximately regarded as a straight line, so that the angle between the ear hook 130 and the functional part housing 120 in the long axis direction is measured and determined as the first angle.
  • the angle between the magnetic element and the magnetic field sensor 121 can be used as another parameter affecting the magnetic field strength. The angle between the magnetic element and the magnetic field sensor 121 directly affects the magnetic field strength of each axial component in the magnetic field sensor coordinate system.
  • the output state of the acoustic device 100 is the second output state, and when the earphone is in the second wearing state as shown in Figure 4, that is, it is hung on the neck B, the angle between the ear hook 130 and the functional part shell 120 can be ⁇ 2. Due to the structural characteristics of the acoustic device 100 or the earphone itself, what contacts the neck B is the functional part shell 120 rather than the speaker (that is, the vibration component 111). Therefore, the positional relationship between the magnetic field sensor 121 and the speaker in the second wearing state is different from that in the first wearing state, that is, the angle ⁇ 2 ⁇ 1.
  • the magnetic field strength at the magnetic field sensor 121 in the first wearing state and the second wearing state is different, so that the second wearing state of the earphone can be identified.
  • some deformation may occur after the acoustic device 100 is used for a long time (due to the strain on the titanium wire in the ear hook 130), and this deformation may affect the first angle, but the change in the first angle caused by the deformation is not sufficient to cause the output state of the acoustic device 100 (or the recognition result of the wearing state of the earphone) to fail.
  • a change in the first angle between the ear hook 130 and the functional component housing 120 can cause a change in the magnetic field strength at the magnetic field sensor 121, and the wearing status can be identified by determining the threshold range of the magnetic field strength.
  • FIG. 5 is another schematic diagram of an acoustic device according to some embodiments of the present specification.
  • the ear hook 130 may include a first ear hook 130 - 1 and a second ear hook 130 - 2
  • the speaker housing 110 includes a first speaker housing 110 - 1 and a second speaker housing 110 - 2
  • the first ear hook 130 - 1 is connected to the first speaker housing 110 - 1 and the second ear hook 130 - 2
  • the second ear hook 130-2 is connected to the second speaker housing 110-2.
  • the acoustic device 100 also includes a rear hook 140, which connects the first ear hook 130-1 and the second ear hook 130-2.
  • the rear hook 140 can be an arc-shaped structure that fits closely to the human head T.
  • the rear hook 140 can keep the acoustic device 100 stable on the user's head T and ensure that the ear hook 130 and the ear are kept in close contact.
  • the rear hook 140 can be made of plastic, metal or silicone.
  • the rear hook 140 when the user wears the rear-hanging acoustic device 100, the rear hook 140 needs to be placed behind the head T so that it surrounds the head T and makes the first ear hook 130-1 and the second ear hook 130-2 fit closely to the connection between the auricle and the head T.
  • the functional part housing 120 may include a first functional part housing 120-1 and a second functional part housing 120-2, the first speaker housing 110-1 and the first functional part housing 120-1 are connected via a first ear hook 130-1, and the second speaker housing 110-2 and the second functional part housing 120-2 are connected via a second ear hook 130-2.
  • the wearing state of the back-hook acoustic device can be determined by the component magnetic field strength.
  • FIG. 6 is another schematic diagram of an acoustic device according to some embodiments of the present specification.
  • the speaker housing 110 and the magnetic field sensor 121 are clamped on both sides of the auricle by the ear hook 130 to keep the acoustic device 100 worn.
  • the ear hook 130 can be an arc-shaped structure adapted to the auricle.
  • the speaker housing 110 and the magnetic field sensor 121 are clamped on both sides of the auricle by the ear hook 130 to maintain the wearing stability of the acoustic device 100.
  • the ear hook 130 can also be an ear clip structure, and the speaker housing 110 and the magnetic field sensor 121 are arranged at both ends of the ear clip, and the ear clip is directly clamped on both sides of the auricle.
  • the speaker and the mainboard of the acoustic device shown in FIG. 6 can be in one housing (e.g., the speaker housing 110), and the battery compartment can be in another housing (e.g., the functional component housing 120).
  • the magnetic field sensor 121 is placed in the battery compartment.
  • the ear hook 130 undergoes a certain deformation, thereby causing the relative position (such as the angle) between the speaker and the magnetic field sensor 121 to change.
  • the output state of the acoustic device can be controlled.
  • the change in the distance between the magnetic element and the magnetic field sensor 121 in the acoustic device shown in FIG. 6 is relatively large, and the change in magnetic field strength caused by the change in distance can drown out the interference of the earth's magnetic field. Therefore, the acoustic device shown in FIG. 6 can use the total magnetic field strength or the component magnetic field strength to control the output state of the acoustic device.
  • the ear hook 130 connected to the speaker housing 110 and the magnetic field sensor 121 (or the functional housing 120) on the acoustic device 100 needs to be stretched to a certain extent, so that the speaker housing 110 and the magnetic field sensor (or the functional housing 120) can be separated from each other by a certain distance, and then the wearing stability of the acoustic device 100 is maintained by elastic clamping of the ear hook 130 on both sides of the auricle.
  • the change in the distance between the magnetic element and the magnetic field sensor 121 will cause the total magnetic field strength to change, and the typical value of the geomagnetic field is about 40-50VT.
  • the change in magnetic field strength caused by the change in the distance between the magnetic element and the magnetic field sensor 121 must be higher than the typical value of the geomagnetic field to drown out the interference of the geomagnetic field. Therefore, preferably, the change in the distance between the magnetic element and the magnetic field sensor 121 can be greater than 10mm. It can be understood that the acoustic device 100 shown in Figure 6 is small in size, and the user stretches the ear hook 130 to a certain extent, which is enough to significantly change the distance between the magnetic element in the speaker housing 110 and the magnetic field sensor 121. At this time, the total magnetic field strength at the magnetic field sensor 121 also changes significantly accordingly. Therefore, the output state of the acoustic device 100 can be controlled according to the change in the total magnetic field strength.
  • FIG. 7A is a schematic diagram of a single magnetic field sensor according to some embodiments of the present specification.
  • the acoustic device 100 can detect changes in the spatial magnetic field with a single magnetic field sensor 121, and a magnetic field sensitive component S1 is disposed in the magnetic field sensor 121.
  • the magnetic field sensitive component S1 in the magnetic field sensor 121 needs to simultaneously measure the component magnetic field strength from the geomagnetic field and the magnetic source in the vibration component 111 (e.g., the permanent magnet in the speaker).
  • the total magnetic field strength component measured by the magnetic field sensor 121 is the vector superposition of the component geomagnetic field strength and the component magnetic source magnetic field strength.
  • Bex, Bey, and Bez respectively represent the three-axial component magnetic field strength of the geomagnetic field at the magnetic field sensitive component S1
  • Bsx, Bsy, and Bsz respectively represent the three-axial component magnetic field strength of the magnetic source in the vibration component 111 at the magnetic field sensitive component S1.
  • the geomagnetic field will interfere with the results of the magnetic field strength at a single magnetic field sensitive element S1 (ie, Bx, By, and Bz), resulting in the accuracy and stability of the wearing state detection of the acoustic device 100 being affected.
  • FIG. 7B is a schematic diagram of a dual magnetic field sensor according to some embodiments of the present specification.
  • the acoustic device 100 can use two magnetic field sensors 121 to detect changes in the spatial magnetic field.
  • the two magnetic field sensors 121 can be two independent magnetic field sensors, or one magnetic field sensor 121 includes two magnetic field sensitive components, such as S1 and S2 as shown in FIG7B .
  • the control circuit can perform differential processing on the spatial magnetic field read by the two magnetic field sensitive components S1 and S2, and determine the change in the spatial magnetic field based on the differential result, thereby controlling the output state of the acoustic device 100.
  • the component magnetic field strengths measured at the magnetic field sensitive component S1 are Bx, By, and Bz
  • the component magnetic field strengths measured at the magnetic field sensitive component S2 are Bx', By', and Bz'.
  • These two sets of component magnetic field strengths are the component earth magnetic field strength and the component magnetic source magnetic field strength.
  • Bex', Bey', Bez' respectively represent the three-axial component magnetic field strength of the earth's magnetic field at the magnetic field sensitive part S2
  • Bsx', Bsy', Bsz' respectively represent the three-axial component magnetic field strength of the magnetic source in the vibration component 111 at the magnetic field sensitive part S2.
  • the actual magnetic field intensity obtained by differential processing of the two sets of component magnetic field intensities measured at the dual magnetic field sensitive part is only related to the component magnetic field intensity of the magnetic source in the acoustic device 100 at the dual magnetic field sensitive part, and has nothing to do with the external magnetic field intensity such as the earth's magnetic field.
  • two or more magnetic field sensors 121 are used to form an array, or a single magnetic field sensor 121 includes two or more magnetic field sensitive elements, which can improve the anti-interference ability of the external environment magnetic field such as the earth's magnetic field.
  • the sensitive axes of the two magnetic field sensitive components are parallel.
  • the sensitive axis refers to the direction in which the magnetic field sensitive component is sensitive to magnetic field changes in space, including the thickness direction X, the major axis direction Y, and the minor axis direction Z of the magnetic field sensor 121.
  • the sensitive axes of the two magnetic field sensitive components are set to be parallel, so that the two magnetic field sensitive components have similar responses to spatial magnetic field changes in the same direction, which helps to more effectively eliminate external magnetic field interference when performing differential processing.
  • the sensitive axes of the two magnetic field sensitive components can be set at a certain angle (for example, 45 degrees), so that the two magnetic field sensitive components can read the spatial magnetic field intensity in different directions, and the components of the spatial magnetic field in different directions (for example, X, Y, Z) are obtained by calculation, and then the control circuit performs differential processing on the spatial magnetic field read by the two magnetic field sensitive components, and controls the output state of the acoustic device according to the differential result.
  • a certain angle for example, 45 degrees
  • the differential processing algorithm needs to be adjusted to adapt to the angle difference between the sensitive axes, which can also eliminate the interference of external magnetic fields such as the geomagnetic field and achieve precise control of the output state of the acoustic device.
  • the two magnetic field sensors can be arranged more flexibly in the magnetic field sensor 121.
  • At least two magnetic field sensors may be disposed on the circuit main board and/or the battery main board and located on the half main board close to the speaker housing 110. In other embodiments, the two magnetic field sensors may also be disposed on a flexible printed circuit board (FPC) and connected to the main board via wires.
  • FPC flexible printed circuit board
  • placing two magnetic field sensitive components directly on the circuit main board and/or the battery main board on the half side of the main board close to the speaker housing 110 can reduce the required wiring length and reduce the complexity and failure rate of the acoustic device.
  • At least two magnetic field sensitive components do not overlap with each other.
  • the distances between the two magnetic field sensitive components and the same magnetic element are different.
  • the distance between the magnetic field sensitive component and the magnetic element may refer to the distance between the geometric center of the magnetic field sensitive component and the geometric center of the magnetic element.
  • the relative position angles between the two magnetic field sensitive components and the magnetic element are different.
  • the relative position angle can be represented by the angle between the line between the magnetic field sensitive component and the magnetic element (the line between the geometric center of the magnetic field sensitive component and the geometric center of the magnetic element) and a specific direction (for example, the thickness direction X, the major axis direction Y, and the minor axis direction Z of the magnetic field sensor 121).
  • the distance between the two magnetic field sensitive components is very close compared to the geomagnetic field, so the influence of external magnetic fields such as the geomagnetic field on the two magnetic field sensitive components is relatively small; and because the two magnetic field sensitive components do not overlap with each other, the magnetic field generated by the magnetic element will have a significant difference in magnetic field strength at the two magnetic field sensitive components. It can be understood that when the two magnetic field sensitive components do not overlap with each other, the magnetic field strength generated by the magnetic element detected by the two magnetic field sensitive components is different, and this difference can better distinguish the change in magnetic field strength generated by the magnetic element from external magnetic field interference such as the geomagnetic field.
  • the two magnetic field sensors do not overlap with each other, so that the magnetic field generated by the magnetic element has different magnetic field strengths at the two magnetic field sensors, so as to facilitate differential processing of the spatial magnetic field read by the two magnetic field sensors, thereby improving the accuracy of the output state of the acoustic device 100.
  • the two magnetic field sensitive elements do not overlap each other in the magnetic field sensor 121, which may result in different spatial angles formed between the sensitive axis directions of the two magnetic field sensitive elements and the vector directions of the magnetic field lines generated by the magnetic element and passing through the magnetic field sensor 121. These differences can enable the magnetic field sensor 121 to better distinguish between changes in magnetic field intensity at the magnetic field sensitive elements and external magnetic field interference such as the geomagnetic field.
  • the distance between the two magnetic field sensitive components can range from 0.1 mm to 20 mm. In some embodiments, the distance between the two magnetic field sensitive components can range from 0.1 mm to 10 mm. In some embodiments, the distance between the two magnetic field sensitive components can range from 1 mm to 10 mm. Preferably, the distance between the two magnetic field sensitive components can range from 1 mm to 5 mm.
  • the variation of the external magnetic field such as the geomagnetic field in space is relatively small, so the external magnetic field such as the geomagnetic field can be approximately regarded as a uniform magnetic field within the range between the two magnetic field sensitive components.
  • the difference between the magnetic field strengths measured by the two magnetic field sensitive components will affect the accuracy of the differential processing.
  • the external magnetic field such as the geomagnetic field
  • the influence of the external magnetic field such as the geomagnetic field on the two magnetic field sensitive components can be approximately regarded as the same. Therefore, when the spatial magnetic field read by the two magnetic field sensitive components is differentially processed, the influence from the external magnetic field such as the geomagnetic field will cancel each other out, thereby highlighting the difference in the magnetic field generated by the magnetic source of the acoustic device 100.
  • the differential processing can eliminate the interference of the external magnetic field and improve the accuracy of the output state of the acoustic device 100.
  • the external magnetic field such as the geomagnetic field can be approximately regarded as a uniform magnetic field between the two magnetic field sensors, so as to facilitate differential processing of the spatial magnetic field read by the two magnetic field sensors.
  • FIG. 8 is a schematic diagram of a magnetic interface according to some embodiments of the present specification.
  • the acoustic device 100 is provided with a magnetic suction interface 123, which is arranged on the circuit main board 122 and on the half main board away from the speaker housing 110, and the minimum distance between the magnetic suction interface 123 and the magnetic field sensitive part (i.e., the magnetic field sensor 121) is greater than or equal to 5 mm.
  • the magnetic suction interface 123 can be a magnetic suction charging interface for charging the acoustic device 100.
  • some acoustic devices 100 can be designed to be provided with a magnetic suction charging interface, i.e., a magnetic suction interface 123, at the tail of the circuit main board 122 (the half main board of the circuit main board 122 away from the speaker housing 110), because the magnetic suction interface 123 contains at least one permanent magnet, which will also form a magnetic field in the surrounding space, so the spatial magnetic field actually measured by the magnetic field sensor 121 is a composite magnetic field composed of the first speaker 111-1, the second speaker 111-2, the magnetic suction interface 123, and the external geomagnetism.
  • a magnetic suction charging interface i.e., a magnetic suction interface 123
  • the position of the magnetic interface 123 relative to the magnetic field sensor 121 is fixed, so the magnetic field generated by the magnetic interface 123 at the magnetic field sensor 121 is a fixed magnetic field, which can be easily eliminated through algorithm calibration.
  • the minimum distance between the magnetic interface 123 and the magnetic field sensor 121 can be set to be greater than or equal to 5mm. In some embodiments, in order to reduce the impact of the magnetic interface and prevent the magnetic field sensor 121 from exceeding the range, the minimum distance between the magnetic interface 123 and the magnetic field sensor 121 can be set to be greater than or equal to 8mm.
  • the acoustic device 100 can be charged conveniently and quickly. Furthermore, by reasonably setting the distance between the magnetic suction interface 123 and the magnetic field sensitive component, while ensuring that the acoustic device 100 can be charged conveniently and quickly, the influence of the spatial magnetic field generated by the magnetic suction interface 123 on the magnetic field strength read by the magnetic field sensor 121 can be reduced, thereby improving the sensitivity of the magnetic field sensor 121 to identify the position of the magnetic element.
  • FIG. 9A is a schematic diagram of the positions of two magnetic field sensitive components according to some embodiments of the present specification
  • FIG. 9B is a schematic diagram of the verification results of the two magnetic field sensitive components according to some embodiments of the present specification.
  • the distance L1 between the two magnetic field sensors S1 and S2 is set to 2 mm, the sensitive axes of the two magnetic field sensors S1 and S2 are kept parallel to each other, and the two magnetic field sensors S1 and S2 are placed in the first functional component housing 120-1 of the acoustic device 100 and close to the speaker, i.e., the speaker housing 110.
  • the actual three-axial component magnetic field intensities at the magnetic field sensor 121 can be obtained as dBx, dBy, and dBz.
  • the x-axis represents the output state (first output state or second output state) of the acoustic device 100
  • the y-axis represents the magnitude of the actual three-axial component magnetic field strength dBx, dBy, and dBz at the magnetic field sensor 121.
  • the curve S is obtained by comprehensive calculation of the three-axial component magnetic field strength dBx, dBy, and dBz.
  • the value on the curve S can be the summed average of dBx, dBy, and dBz. It can be seen from the figure that the dBx, dBy, and dBz curves are synchronized or approximately synchronized with the changes in the curve S.
  • the output state of the acoustic device 100 is the second output state (corresponding to the earphone being in a wearing state), and when the curve S (or dBx, dBy, and dBz) is at a low level, the output state of the acoustic device 100 is the first output state (corresponding to the earphone being in a non-wearing state).
  • dBx, dBy, and dBz can all change significantly and accurately reflect the change in the output state of the acoustic device 100 (or the wearing state of the earphone), and the judgment process is similar to that of curve S.
  • the magnetic field sensor 121 may read the total magnetic field strength of the spatial magnetic field, and control the output state of the acoustic device 100 according to the total magnetic field strength.
  • FIG. 10 is a schematic diagram of a proximity sensor placed in a motherboard compartment according to some embodiments of the present specification
  • FIG. 11 is a schematic diagram of a proximity sensor placed in a speaker compartment according to some embodiments of the present specification.
  • the acoustic device 100 may further include a proximity sensor 124.
  • the proximity sensor 124 may be disposed on one side of the mainboard compartment (i.e., the compartment body formed by the functional component housing 120) close to the human body. 124 is arranged in the speaker housing 110.
  • the proximity sensor 124 can be used to detect the approach of human skin. When the proximity sensor 124 is close to the human body, the value to be measured changes significantly. When the value to be measured reaches the preset threshold, the output state of the acoustic device 100 can be controlled to be the second output state.
  • the proximity sensor 124 is close to the human skin, and the value to be measured changes until it reaches the preset threshold. At this time, the output state of the acoustic device 100 can be controlled to be the second output state, and the corresponding headphones are in the wearing state.
  • the value to be measured refers to the signal value measured by the proximity sensor 124 (for example, capacitance value, light intensity, etc.), which can be used to indicate the distance between the proximity sensor 124 and the human skin to help control the output state of the acoustic device 100 (or determine whether the headphones are in the wearing state);
  • the preset threshold can be a preset parameter for controlling the output state of the acoustic device 100.
  • the preset threshold can be set according to the signal value measured by the proximity sensor 124. Specifically, when the acoustic device 100 is close to or in contact with the user's skin, the measured value of the proximity sensor 124 will change significantly.
  • the control circuit controls the acoustic device 100 to be in the second output state; conversely, if the measured value is lower than the preset threshold, it can be considered that the acoustic device 100 is in the non-wearing state, and the control circuit controls the acoustic device 100 to be in the first output state.
  • the magnetic field sensor 121 and the proximity sensor 124 can be used in combination to control the output state of the acoustic device 100.
  • the control circuit determines that the magnetic field sensor 121 detects that the magnetic field intensity of each axial component is within the threshold interval, and the measured value of the proximity sensor 124 reaches the preset threshold, the acoustic device 100 can be controlled to be in the second output state; otherwise, the control circuit controls the acoustic device 100 to be in the first output state.
  • the proximity sensor 124 may include but is not limited to a capacitive proximity sensor, a photoelectric proximity sensor, and the like.
  • the accuracy of output state control of the acoustic device 100 can be further improved by using a variety of sensor fusion solutions, thereby reducing the energy consumption of the acoustic device 100 and extending the use time; on the other hand, it can also reduce user operation steps and improve user experience.
  • numbers describing the number of components and attributes are used. It should be understood that such numbers used in the description of the embodiments are modified by the modifiers "about”, “approximately” or “substantially” in some examples. Unless otherwise specified, “about”, “approximately” or “substantially” indicate that the numbers are allowed to vary by ⁇ 20%. Accordingly, in some embodiments, the numerical parameters used in the specification and claims are approximate values, which may change according to the required features of individual embodiments. In some embodiments, the numerical parameters should take into account the specified significant digits and adopt the general method of retaining digits. Although the numerical domains and parameters used to confirm the breadth of their range in some embodiments of this specification are approximate values, in specific embodiments, the setting of such numerical values is as accurate as possible within the feasible range.

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Abstract

一种声学装置（100），声学装置（100）包括：扬声器壳体（110），扬声器壳体（110）内包含至少一个磁性元件；磁场传感器（121），被配置为读取空间磁场；其中，磁性元件和磁场传感器（121）的相对位置发生变化导致空间磁场变化时，声学装置（100）的输出状态变化。

Description

一种声学装置 技术领域
本说明书涉及声学技术领域，特别涉及一种声学装置。
背景技术
在目前的市场中，佩戴检测传感器被广泛应用于在耳机等产品中，典型应用为当识别到用户佩戴耳机后，自动唤醒系统，当识别到用户摘下耳机后，自动进入待机模式，从而实现降低功耗、延长使用时间的目的，同时节省了用户的操作步骤，大大提高使用体验。
目前主流的佩戴检测传感器有基于红外传感器、电容式接触传感器等方案，前者结构与系统复杂，后者稳定性低，都存在识别准确度不够高的问题。尤其在骨传导耳机中，因为其独特的后挂式佩戴方式，传统佩戴检测方案均不能实现理想的检测效果。
因此有必要开发一种新型的声学装置和佩戴检测方案，实现骨传导耳机佩戴与否的准确识别。
发明内容
本说明书实施例之一提供一种声学装置。所述声学装置包括：扬声器壳体，所述扬声器壳体内包含至少一个磁性元件；磁场传感器，被配置为读取空间磁场；其中，所述磁性元件和所述磁场传感器的相对位置发生变化导致所述空间磁场变化时，所述声学装置的输出状态变化。
在一些实施例中，所述磁场传感器包括至少两个磁场敏感件。
在一些实施例中，所述至少两个磁场敏感件平行设置。
在一些实施例中，所述声学装置设有主板仓，所述主板仓中容纳有电路主板和/或电池主板，所述至少两个磁场敏感件设置在电路主板和/或电池主板上，且位于靠近所述扬声器壳体的半侧主板上。
在一些实施例中，所述至少两个磁场敏感件彼此不重合。
在一些实施例中，所述至少两个磁场敏感件之间的距离范围为0.1mm～20mm。
在一些实施例中，所述至少两个磁场敏感件的距离为1mm～10mm。
在一些实施例中，所述声学装置设有磁吸接口，所述磁吸接口与所述至少两个磁场敏感件之间的最小距离大于等于5mm。
在一些实施例中，所述声学装置还包括接近传感器，所述声学装置设有主板仓，所述接近传感器被设置在所述扬声器壳体和/或所述主板仓中靠近人体的一侧。
在一些实施例中，所述声学装置包括耳挂，所述扬声器壳体与所述磁场传感器通过所述耳挂连接。
在一些实施例中，所述扬声器壳体和所述磁场传感器通过所述耳挂夹持在耳廓两侧。
在一些实施例中，所述耳挂包括第一耳挂和第二耳挂，所述扬声器壳体包括第一扬声器壳体和第二扬声器壳体，所述声学装置还包括后挂；其中，所述第一耳挂连接所述第一扬声器壳体，所述第二耳挂连接所述第二扬声器壳体，所述后挂连接所述第一耳挂和所述第二耳挂。
在一些实施例中，所述声学装置包括控制电路，所述控制电路被配置为根据所述空间磁场的变化控制所述声学装置的输出状态。
在一些实施例中，所述磁场传感器读取所述空间磁场在特定方向的磁场强度，所述控制电路根据所述磁场强度控制所述声学装置的输出状态。
在一些实施例中，所述控制电路判断所述磁场强度所在的阈值区间，并根据所述磁场强度所在的所述阈值区间控制所述声学装置的输出状态。
在一些实施例中，所述阈值区间包括第一阈值区间和第二阈值区间，所述磁场强度位于所述第一阈值区间时，所述声学装置为第一输出状态；所述磁场强度位于所述第二阈值区间时，所述声学装置为第二输出状态。
在一些实施例中，所述磁场传感器包括至少两个磁场敏感件，所述控制电路对所述至少两个磁场敏感件读取的空间磁场进行差分处理，并根据差分结果控制所述声学装置的输出状态。
在一些实施例中，所述声学装置还包括接近传感器，所述控制电路根据所述接近传感器的检测结果和所述磁场传感器读取的空间磁场控制所述声学装置的输出状态。
在一些实施例中，所述磁场传感器包括霍尔传感器、AMR传感器、GMR传感器或TMR传感器。
本说明书实施例之一还提供一种耳机，包括：本说明书中任一实施例所述的声学装置，所述控制电路根据所述声学装置的输出状态识别所述耳机的佩戴状态。
附图说明
本说明书将以示例性实施例的方式进一步说明，这些示例性实施例将通过附图进行详细描述。这些实施例并非限制性的，在这些实施例中，相同的编号表示相同的结构，其中：
图1是根据本说明书一些实施例所示的声学装置的示意图；
图2是根据本说明书一些实施例所示的声学装置的另一示意图；
图3是根据本说明书一些实施例所示的声学装置的输出状态为第二输出状态的示意图；
图4是根据本说明书一些实施例所示的声学装置的输出状态为第二输出状态的另一示意图；
图5是根据本说明书一些实施例所示的声学装置的另一示意图；
图6是根据本说明书一些实施例所示的声学装置的另一示意图；
图7A是根据本说明书一些实施例所示的单磁场传感器示意图；
图7B是根据本说明书一些实施例所示的双磁场传感器的示意图；
图8是根据本说明书一些实施例所示的磁吸接口的示意图；
图9A是根据本说明书一些实施例所示的两个磁场敏感件的位置的示意图；
图9B是根据本说明书一些实施例所示的两个磁场敏感件的验证结果示意图；
图10是根据本说明书一些实施例所示的接近传感器放置在主板仓的示意图；
图11是根据本说明书一些实施例所示的接近传感器放置在扬声器仓的示意图。
具体实施方式
为了更清楚地说明本说明书实施例的技术方案，下面将对实施例描述中所需要使用的附图作简单的介绍。显而易见地，下面描述中的附图仅仅是本说明书的一些示例或实施例，对于本领域的普通技术人员来讲，在不付出创造性劳动的前提下，还可以根据这些附图将本说明书应用于其它类似情景。除非从语言环境中显而易见或另做说明，图中相同标号代表相同结构或操作。
应当理解，本文使用的“系统”、“装置”、“单元”和/或“模块”是用于区分不同级别的不同组件、元件、部件、部分或装配的一种方法。然而，如果其他词语可实现相同的目的，则可通过其他表达来替换所述词语。
如本说明书和权利要求书中所示，除非上下文明确提示例外情形，“一”、“一个”、“一种”和/或“该”等词并非特指单数，也可包括复数。一般说来，术语“包括”与“包含”仅提示包括已明确标识的步骤和元素，而这些步骤和元素不构成一个排它性的罗列，方法或者设备也可能包含其它的步骤或元素。
本说明书的一些实施例提供了一种声学装置。该声学装置包括扬声器壳体和磁场传感器，其中，扬声器壳体内包含至少一个磁性元件，磁场传感器可以读取空间磁场，当磁性元件和磁场传感器的相对位置发生变化导致空间磁场变化时，声学装置的输出状态变化。声学装置的输出状态是指声学装置的功能状态。例如，声学装置的输出状态可以包括但不限于播放音频、暂停音频、进入待机模式、开机、关机等。
在本说明书实施例中，通过在声学装置中设置磁场传感器，磁场传感器读取空间磁场，根据磁场传感器读取的空间磁场的变化情况以控制声学装置的输出状态，从而可以降低声学装置功耗、延长声学装置的使用时间，提升交互体验。
图1是根据本说明书一些实施例所示的声学装置的示意图。
在一些实施例中，如图1所示，声学装置100可以包括扬声器壳体110和磁场传感器121。其中，扬声器壳体110包含至少一个磁性元件，磁场传感器121用于读取空间磁场。
扬声器壳体110可以是用于容纳和保护磁性元件的外壳结构。在一些实施例中，扬声器壳体110的形状可以为长方体、类长方体、圆柱体、椭球状或其他规则以及不规则的立体结构，扬声器壳体110可以设计为一体式或分体式。在一些实施例中，扬声器壳体110的材料可以是金属、塑料、陶瓷等，使得扬声器壳体110具有良好的强度、耐磨性和抗干扰性能，有效保护内部的电子元器件(例如，磁性元件、下文的振动组件111)。
在一些实施例中，扬声器壳体110内还可以用于容纳振动组件111。振动组件111可以是声学装置100中将电信号转换为声音的扬声器。在一些实施例中，振动组件111的种类可以包括动圈式、电磁式、电容式、压电式等。具体地，动圈式/动铁式的振动组件111包括线圈以及可以作为磁源的永磁体，电流通过线圈时，与磁源产生的磁场相互作用，从而使振膜产生振动，发出声音；电磁式的振动组 件111包括可以作为磁源的电磁性元件，当通电时，线圈产生磁场，使电磁性元件吸引或排斥振膜，从而产生振动并发出声音；电容式的振动组件111不包括磁源，使用两个平行的电极板来驱动振膜，振膜通常为绝缘材料，两侧涂有导电材料，当电极间施加电压时，产生的电场力驱动振膜振动，发出声音；压电式的振动组件111不包括磁源，其通过采用压电陶瓷或压电聚合物作为振膜。当施加电压时，压电材料的形状发生改变，从而产生振动并发出声音。
磁性元件可以用于与磁场传感器121进行配合，识别磁性元件和磁场传感器121的相对位置的变化。在一些实施例中，磁性元件可以包括用于作为振动组件111磁源的磁性元件。磁源可以是指能够产生空间磁场且位于振动组件111内的磁性元件。在一些实施例中，磁源包括但不限于普通磁性元件、电磁性元件、永磁体等。例如，振动组件111为动圈式，磁性元件可以是永磁体；振动组件111为电磁式，磁性元件可以是电磁性元件。在一些实施例中，在振动组件111内设置为磁源的磁性元件产生的磁场可以被磁场传感器121检测，从而实现对磁性元件和磁场传感器121的相对位置的判断。在一些实施例中，对于压电式的振动组件111由于其本身结构不带磁性元件，则可以在扬声器壳体110内单独设置的一块或多块永磁体作为磁源。而对于动圈式/动铁式的振动组件111由于其本身的结构带有永磁体，则动圈式/动铁式的振动组件111内部自带的永磁体即可作为磁源使用。需要说明的是，扬声器壳体110内的磁性元件的数量可以是一个或多个。例如，振动组件111内包含磁源时，扬声器壳体110内可以不设置磁性元件，或者，扬声器壳体110内也可以设置一个或多个磁性元件。又例如，振动组件111内不包含磁源时，扬声器壳体110需设置至少一个磁性元件。
磁场传感器121可以用于读取空间磁场。空间磁场可以是指声学装置100的部件上带有的磁性元件和外界磁场所形成的复合磁场，例如，空间磁场可以为下文所述的第一扬声器111-1、第二扬声器111-2、磁吸接口123以及外界地磁等共同构成的复合磁场。关于复合磁场的说明内容可以参见图8及其相关描述。在一些实施例中，磁场传感器121可以读取到磁性元件和磁场传感器121在不同相对位置时的周围空间磁场的磁场强度的变化。在一些实施例中，声学装置100还可以包括控制电路，控制电路能够基于空间磁场强度的变化控制声学装置100的输出状态。具体地，可以将振动组件111(即下文所述的扬声器)自带的磁性元件或者单独设置的磁性元件作为磁源与磁场传感器配合使用。声学装置100的各部分(例如，扬声器壳体110和磁场传感器121)相对位置发生变化，导致振动组件111内的磁性元件与磁场传感器121之间的距离和/或夹角发生变化，磁场传感器121测得的磁场强度也会有相应的变化。控制电路可以根据磁场传感器121检测的空间磁场的变化来控制声学装置100的输出状态。在一些实施例中，声学装置100的磁源相对于磁场传感器121的距离和夹角发生变化，该变化会导致空间磁场的变化，从而改变磁场传感器121处的总磁场强度或分量磁场强度。控制电路可以监测磁场传感器121处的磁场强度的变化，根据预先设定的磁场强度阈值区间来控制声学装置100的输出状态。关于根据磁场强度所在的阈值区间控制声学装置100的输出状态的说明内容可以参见下文，此处不再赘述。
在一些实施例中，声学装置100还可以包括耳挂130。耳挂130是一种连接扬声器壳体110与磁场传感器121的部件，用于将声学装置100固定在用户的耳朵上。在一些实施例中，耳挂130可以为与人体耳廓和头部T连接处相适配的弧形结构，当用户佩戴声学装置100时，耳挂需要挂设在耳廓与头部T的连接处保持声学装置固定于耳朵上，此时声学装置100的扬声器壳体110和磁场传感器121分别位于耳廓的前后两侧对用户耳朵产生夹紧力以保持声学装置100的佩戴稳定性。在一些实施例中，耳挂130可以由柔韧性较强、轻便、耐磨的材料制成，如硅胶、软塑料、钛合金或不锈钢等。
在一些实施例中，扬声器壳体110与磁场传感器121可以通过耳挂130直接连接。例如，可以用柔性材料(例如，硅胶等)对磁场传感器121进行包覆，包覆后的磁场传感器121通过耳挂130与扬声器壳体110直接连接。在一些实施例中，扬声器壳体110与磁场传感器121可以通过耳挂130间接连接。例如，声学装置100还可以包括功能件壳体120，磁场传感器121设置于功能件壳体120内，磁场传感器121通过功能件壳体120和耳挂130与扬声器壳体110连接。在一些实施例中，功能件壳体120还可以用于容纳声学装置100的其他部件，例如，电池、电路主板等。在一些实施例中，功能件壳体120可以采用圆柱形、长方形或其他自定义形状，以满足内部组件布局的需求。功能件壳体120的材料可以选用ABS塑料、金属合金或其他合适的材料，以确保轻巧、耐用且舒适佩戴。
在一些实施例中，磁场传感器121可以放置在声学装置100的主板仓或者电池仓(主板仓或者电池仓可以是指功能件壳体120所形成的仓体)内。例如，磁场传感器121放在主板仓内，将其直接贴装在主板表面且靠近振动组件111的位置，或将其贴在单独的PCB或FPC板上，再通过引线连接到主板上，从而接入声学装置控制芯片。在另一些实施例中，磁场传感器121还可以放置于耳挂130或下文的后挂140上。
在本说明书一些实施例中，通过将磁场传感器121放置在声学装置100的主板仓或者电池仓 内可以不需要额外的引线，使得其更靠近振动组件111并能使自身声学装置保持相对稳定。
在一些实施例中，磁场传感器121可以包括霍尔传感器、各向异性磁阻传感器(AMR传感器)、巨磁阻传感器(GMR传感器)或隧道磁阻传感器(TMR传感器)。
在本说明书一些实施例中，通过在声学装置100中设置磁场传感器121，并根据磁场传感器121读取空间磁场以控制声学装置100的输出状态，能够降低声学装置100功耗、延长声学装置100的使用时间。
此外，本说明书实施例中所描述的声学装置100可以应用于耳机、助听器、眼镜等可穿戴设备。控制电路根据声学装置的输出状态可以识别耳机、助听器、眼镜等可穿戴设备的佩戴状态。以声学装置100应用于耳机为例，耳机处于佩戴状态和非佩戴状态下，磁性元件和磁场传感器121之间的相对位置会发生变化，二者相对位置的变化导致空间磁场的变化时，声学装置100的输出状态变化，输出状态的变化可以对应于耳机的佩戴状态变化。例如，耳机处于非佩戴状态时，声学装置100的输出状态可以为第一输出状态，第一输出状态可以是指功能关闭状态，如关机、待机、停止播放音频；耳机处于佩戴状态时，声学装置100的输出状态可以为第二输出状态，第二输出状态可以是指功能工作状态，如开机、播放音频。
图2是根据本说明书一些实施例所示的声学装置的另一示意图。
如图2所示，在一些实施例中，磁场传感器121读取空间磁场在特定方向的磁场强度，控制电路根据磁场传感器121读取的磁场强度控制声学装置100的输出状态。其中，特定方向可以包括厚度方向X、长轴方向Y、短轴方向Z。在一些实施例中，X、Y、Z轴是以磁场传感器121本身为原点建立的坐标系的三个轴，厚度方向X平行于磁场传感器的厚度方向，且彼此正交的长轴方向Y和短轴方向Z。其中，长轴方向Y可以定义为磁场传感器121的形状中具有最大延伸尺寸的方向(例如，当磁场传感器121的形状为长方形或近似长方形时，长轴方向即长方形或近似长方形的长度方向)，短轴方向Z可以定义为在磁场传感器121的形状中垂直于长轴方向Y的方向(例如，当磁场传感器121的形状为长方形或近似长方形时，短轴方向即长方形或近似长方形的宽度方向)。需要说明的是，上述特定方向除了厚度方向X、长轴方向Y和短轴方向Z，还可以是上述坐标系下的其他任意矢量方向。
在一些实施例中，振动组件111内的作为磁源的磁性元件可以产生空间磁场，磁性元件相对于磁场传感器121的位置发生变化，例如，声学装置100应用于耳机，耳机在自然状态下(即非佩戴状态)和佩戴状态下切换时会使磁性元件相对于磁场传感器121的位置发生变化，该位置变化会导致空间磁场的改变。在一些实施例中，空间磁场的改变可以是总磁场强度的改变，即厚度方向X、长轴方向Y、短轴方向Z上各自的磁场强度的矢量和的改变；空间磁场的改变还可以是分量磁场强度的改变，即厚度方向X、长轴方向Y、短轴方向Z的磁场强度的改变。在一些实施例中，振动组件111内的作为磁源的磁性元件和磁场传感器121之间的相对距离相对固定，二者距离改变不大，因此厚度方向X、长轴方向Y、短轴方向Z上各自的磁场强度的矢量和的改变也不大，相应地总磁场强度的改变也不大。而由于角度偏转导致的某一个轴(例如厚度方向X)的分量磁场强度增强，相应地另一个轴(例如长轴方向Y或短轴方向Z)的分量磁场强度减弱，故厚度方向X、长轴方向Y、短轴方向Z的分量磁场强度的改变比总磁场强度的改变大。基于此，可以通过磁场传感器121读取特定方向的分量磁场强度来控制声学装置100的输出状态。
在本说明书一些实施例中，磁性元件相对于磁场传感器121的位置发生变化，空间磁场在特定方向的分量磁场强度的变化量相对较大，根据特定方向的磁场强度的变化来控制声学装置100的输出状态，可以进一步提高声学装置100的输出状态的准确性。
阈值区间可以是指磁场传感器在特定方向的磁场强度取值范围(或者是后文中两个磁场传感器或两个磁场敏感件在同一方向上的磁场强度的差值的取值范围)，该范围用于确定声学装置100的输出状态(例如，第一输出状态或第二输出状态)。在一些实施例中，控制电路可以判断磁场强度所在的阈值区间，并根据磁场强度所在的阈值区间控制声学装置100的输出状态。在一些实施例中，阈值区间可以包括第一阈值区间和第二阈值区间。磁场强度位于不同的阈值区间时，声学装置的输出状态不同。关于第一阈值区间和第二阈值区间的说明内容可以参见下文，此处不再赘述。
在一些实施例中，磁场强度所在的阈值区间不同，则声学装置100的输出状态不同。不同声学装置100的阈值区间不同，阈值区间可以根据声学装置100出厂时的设置进行确定。具体地，声学装置100在出厂的时候，可以设置一个通用的阈值区间，并且利用人工头对每个声学装置100进行简单的校准确定出厂的初始值，后续以初始值为标准来确定阈值区间。例如，让声学装置100处于第一输出状态下(或将声学装置100应用于耳机，耳机处于非佩戴状态下)，此时利用磁场传感器121测量声学装置100在特定方向(例如，X轴、Y轴、Z轴方向)的磁场强度，并将该磁场强度作为第一初始值，进而 以第一初始值为标准扩大一定范围并确定为第一阈值区间，该第一阈值区间即作为声学装置100在第一输出状态下(或耳机处于非佩戴状态下)的磁场强度所对应的阈值区间。当磁场强度位于该第一阈值区间时，可以控制声学装置100的输出状态为第一输出状态(或判断耳机处于非佩戴状态)。同理，让声学装置100处于第二输出状态下(或将声学装置100应用于耳机，耳机处于佩戴状态下)，此时利用磁场传感器121测量声学装置100在特定方向的磁场强度，并将该磁场强度作为第二初始值，进而根据第二初始值确定第二阈值区间，该第二阈值区间即作为声学装置100在第二输出状态下(或耳机处于佩戴状态下)的磁场强度所对应的阈值区间。当磁场强度位于该第二阈值区间时，可以控制声学装置100的输出状态为第二输出状态(或判断耳机处于非佩戴状态)。其中，第一输出状态下的特定方向与第二输出状态下的特定方向保持一致。
在一些实施例中，阈值区间的影响因素包括但不限于声学装置100结构、声学装置类型(骨导、气导、骨气导)、磁场传感器121的位置、磁场传感器121的放置方式等。其中，声学装置100结构可以包括后挂式、开放式气导式(如图6所示的单耳声学装置)等。磁场传感器121的位置可以包括靠近或远离电路主板、靠近耳挂130与功能件壳体120连接部位的端部等；磁场传感器121的放置方式可以包括磁场传感器121在PCB上是水平放置、垂直放置或倾斜放置等。
仅作为示例，当磁场传感器121靠近电路主板时，振动组件111内作为磁源的磁性元件与磁场传感器121之间的距离和夹角在声学装置100的输出状态不同时(或声学装置100应用于耳机，耳机处于佩戴和非佩戴状态下)的变化较大，导致厚度方向X和长轴方向Y的分量磁场强度有明显的变化。例如，声学装置100的输出状态为第二输出状态时(或耳机在佩戴状态下)，厚度方向X的分量磁场强度增大，而长轴方向Y的分量磁场强度能减小；而声学装置100的输出状态为第一输出状态时(或耳机在非佩戴状态下)，厚度方向X的分量磁场强度减小，长轴方向Y的分量磁场强度增大；短轴方向Z的分量磁场强度变化相对较小。
在本说明书一些实施例中，通过判断磁场强度所在的阈值区间来控制声学装置100的输出状态，可以降低声学装置100的功耗，延长使用时间。例如，声学装置100在未使用时(如耳机处于非佩戴状态)，可以控制声学装置100的输出状态为第一输出状态；声学装置100在使用时(如耳机处于佩戴状态)，控制声学装置100的输出状态为第二输出状态。
图3是根据本说明书一些实施例所示的声学装置的输出状态为第二输出状态的示意图。
在一些实施例中，阈值区间可以包括第一阈值区间和第二阈值区间，磁场强度位于第一阈值区间时，声学装置100为第一输出状态(声学装置100应用于耳机时，对应耳机处于非佩戴状态)；磁场强度位于第二阈值区间时，声学装置100为第二输出状态(声学装置100应用于耳机时，对应耳机处于第一佩戴状态，即挂耳状态)。在一些实施例中，第一阈值区间和第二阈值区间之间存在一个的界限，以确保能够准确地控制声学装置100的输出状态(或判断耳机的佩戴状态)。例如，第一阈值区间对应的磁场强度范围处于该界限以下，声学装置100的输出状态为第一输出状态(或代表耳机处于非佩戴状态)；第二阈值区间对应的磁场强度范围处于该界限以上，声学装置100的输出状态为第二输出状态(或代表耳机处于第一佩戴状态)。在一些实施例中，可以在第一阈值区间和第二阈值区间之间设置一个缓冲区(也叫第一缓冲区)，以应对外界磁场干扰或磁场传感器121的误差。仅作为示例，第一阈值区间和第二阈值区间之间的界限的磁场强度为W1，为应对外界磁场干扰或磁场传感器121的误差，此时可以设置以该界限W1为中点的磁场强度范围作为第一缓冲区，例如[W1-A1,W1+A1]，则磁场强度处于第一缓冲区[W1-A1,W1+A1]的磁场强度区间时，控制电路控制声学装置100的输出状态待定，而非确切的控制声学装置100的输出状态为第一输出状态或第二输出状态。
第一阈值区间是指在特定方向的磁场强度取值范围，该范围对应于声学装置100的输出状态为第一输出状态。
第二阈值区间是指在特定方向的磁场强度取值范围，该范围对应于声学装置100的输出状态为第二输出状态。参考图3，声学装置100为第二输出状态时，对应于耳机处于第一佩戴状态，第一佩戴状态是指将声学装置100或耳机挂在头部T声学装置正常佩戴于耳朵上的挂耳状态。
在本说明书一些实施例中，通过磁场强度位于的阈值区间不同，可以准确的控制声学装置100的输出状态。
图4是根据本说明书一些实施例所示的声学装置的输出状态为第二输出状态的另一示意图。
在一些实施例中，阈值区间还可以包括第三阈值区间。第三阈值区间是指在特定方向的磁场强度取值范围，该范围对应于声学装置100应用在耳机上时，声学装置100为第二输出状态且对应于耳机的第二佩戴状态。参考图4，第二佩戴状态是指将声学装置100或耳机挂在脖颈B上的挂脖状态。即，声学装置100为第二输出状态时，对应于耳机可以有两种佩戴状态，第一佩戴状态和第二佩戴状态。在 一些实施例中，第三阈值区间和第二阈值区间之间存在一个的界限，以确保能够准确地区分耳机的两种佩戴状态。例如，第二阈值区间对应的磁场强度范围处于该界限以下，代表第一佩戴状态；第三阈值区间对应的磁场强度范围处于该界限以上，代表第二佩戴状态。在一些实施例中，可以在第三阈值区间和第二阈值区间之间设置一个缓冲区(也叫第二缓冲区)，以应对外界磁场干扰或磁场传感器121的误差。仅作为示例，第二阈值区间和第三阈值区间之间的界限的磁场强度为W2，为应对外界磁场干扰或磁场传感器121的误差，此时可以设置以该界限W2为中点的磁场强度范围作为第二缓冲区，例如[W2-A2,W2+A2]，则磁场强度处于第二缓冲区[W2-A2,W2+A2]的磁场强度区间时，控制电路将耳机的佩戴状态判断为待定，而非确切的第一佩戴状态或第二佩戴状态。
在本说明书一些实施例中，通过设置第三阈值区间可以实现耳机的挂脖状态与挂耳状态之间的有效识别。
在一些实施例中，如图2、图3所示，声学装置100可以包括第一扬声器111-1与第二扬声器111-2。第二扬声器111-2内包含磁性元件时，第二扬声器111-2与磁场传感器121的距离也会对磁场分布造成影响。当磁场传感器121检测到的磁场强度位于第一阈值区间时，即声学装置100为第一输出状态时，此时第一扬声器111-1与第二扬声器111-2均与磁场传感器121的距离较近(一般小于5cm)，第一扬声器111-1与第二扬声器111-2单独在磁场传感器121处产生的磁感应强度分别为B01和B02，忽略地磁场等外界干扰磁场时，B01、B02矢量叠加得到总磁场强度B0，其中，总磁场强度B0可以分解为对应磁场传感器坐标系X、Y、Z轴方向的三个正交分量磁场强度B0x、B0y、B0z。在一些实施例中，当磁场传感器121检测到的磁场强度位于第二阈值区间，即声学装置100为第二输出状态时，第二扬声器111-2远离磁场传感器121(距离通常大于14cm)，第一扬声器111-1与第二扬声器111-2在磁场传感器121处产生的磁感应强度发生显著变化，此时X、Y、Z轴方向的三个正交分量磁场强度矢量叠加得到的总磁场强度为B1，各轴分量分别为B1x、B1y、B1z，通过对总磁场强度或者轴方向分量的测量，并设定合适的阈值区间，即可实现对声学装置100的输出状态的控制。
参考图2和图3，在一些实施例中，耳挂130与功能件壳体120之间形成第一夹角，第一阈值区间对应的第一夹角的值大于第二阈值区间对应的第一夹角的值。第一阈值区间对应的第一夹角可以是指磁场强度位于第一阈值区间即声学装置100的输出状态为第一输出状态(对应于耳机处于非佩戴状态)时，耳挂130与功能件壳体120长轴方向(图2的虚线)的夹角；同理，第二阈值区间对应的第一夹角是指磁场强度位于第二阈值区间即声学装置100的输出状态为第二输出状态(对应于耳机处于佩戴状态)时，耳挂130与功能件壳体120长轴方向(图3的虚线)的夹角。如图2所示，磁场传感器121检测到的磁场强度位于第一阈值区间时，耳挂130与功能件壳体120之间的空间夹角可以设为α0；磁场传感器121检测到的磁场强度位于第二阈值区间时，第一扬声器111-1与第二扬声器111-2与颞骨之间有一定的夹紧力，使得耳挂130发生一定偏转，此时耳挂130与功能件壳体120之间的空间夹角变为α1，如图3所示。因此，第一阈值区间对应的第一夹角大于第二阈值区间对应的第一夹角。在一些实施例中，可以将耳挂130(即耳挂130和功能件壳体120的连接处与耳挂130和功能件壳体120的连接处之间的部分耳挂130)近似看作直线，从而对耳挂130和功能件壳体120长轴方向的夹角进行测量并确定为第一夹角。在另一些实施例中，磁性元件和磁场传感器121之间的夹角可以作为影响磁场强度的另一参数，磁性元件和磁场传感器121之间的夹角会直接影响在磁场传感器坐标系下的各个轴向分量磁场强度。
在一些实施例中，声学装置100的输出状态为第二输出状态，且耳机处于如图4所示的第二佩戴状态即被挂在脖颈B时，耳挂130与功能件壳体120之间的夹角可以为α2，由于声学装置100或耳机本身的结构特性，其与脖颈B接触的是功能件壳体120而非扬声器(即振动组件111)，因此第二佩戴状态下的磁场传感器121与扬声器之间的位置关系与第一佩戴状态下不同，即夹角α2≠α1，同时因为第二扬声器111-2与磁场传感器121之间的距离被缩短，因此第一佩戴状态和第二佩戴状态的磁场传感器121处的磁场强度不同，从而可以识别出耳机的第二佩戴状态。
可以理解的是，当声学装置100长时间使用后可能会发生的一些形变(来源于耳挂130中的钛丝的劳损度)，这种形变可能会影响第一夹角，但形变导致的第一夹角的变化不足以导致声学装置100的输出状态(或耳机的佩戴状态的识别结果)失效。
在本说明书一些实施例中，耳挂130与功能件壳体120之间的第一夹角的变化能够导致磁场传感器121处的磁场强度发生变化，通过判断磁场强度所在的阈值区间即可实现佩戴状态识别。
图5是根据本说明书一些实施例所示的声学装置的另一示意图。
如图5所示，在一些实施例中，耳挂130可以包括第一耳挂130-1和第二耳挂130-2，扬声器壳体110包括第一扬声器壳体110-1和第二扬声器壳体110-2，第一耳挂130-1连接第一扬声器壳体110- 1，第二耳挂130-2连接第二扬声器壳体110-2。声学装置100还包括后挂140，后挂140连接第一耳挂130-1和第二耳挂130-2。在一些实施例中，后挂140可以为紧贴于人体头部T相适配的弧形结构，后挂140可以使声学装置100在用户头部T上保持稳定，并确保耳挂130与耳朵保持贴合。在一些实施例中，后挂140可以由塑料、金属或硅胶等制成。在一些实施例中，当用户佩戴后挂式声学装置100时，需要将后挂140置于头部T后方，使其环绕头部T并使得第一耳挂130-1和第二耳挂130-2紧贴于耳廓和头部T连接处。在一些实施例中，功能件壳体120可以包括第一功能件壳体120-1和第二功能件壳体120-2，第一扬声器壳体110-1和第一功能件壳体120-1通过第一耳挂130-1相连，第二扬声器壳体110-2和第二功能件壳体120-2通过第二耳挂130-2相连。
在一些实施例中，可以通过分量磁场强度判断后挂式声学装置的佩戴状态。
图6是根据本说明书一些实施例所示的声学装置的另一示意图。
在一些实施例中，扬声器壳体110和磁场传感器121(或功能件壳体120)通过耳挂130夹持在耳廓两侧以保持声学装置100的佩戴。如图6所示，在一些实施例中，耳挂130可以为与耳廓适配的弧形结构，当用户佩戴如图6所示的声学装置100时，直接将耳挂130紧贴于耳廓和头部T连接处，此时扬声器壳体110和磁场传感器121(或功能件壳体120)通过耳挂130夹持在耳廓两侧保持声学装置100的佩戴稳定性。在其他实施例中，扬声器壳体110和磁场传感器121(或功能件壳体120)通过耳挂130夹持在耳廓两侧时，耳挂130也可以为耳夹式结构，扬声器壳体110和磁场传感器121设置于耳夹的两端部，耳夹直接夹持在耳廓两侧。
在本说明书一些实施例中，图6中所示的声学装置的扬声器和主板可以在一个壳体(例如，扬声器壳体110)里，电池仓可以在另一个壳体(例如，功能件壳体120)里。如图6所示，将磁场传感器121放置在电池仓内，当声学装置100佩戴时，耳挂130发生一定形变，从而导致扬声器与磁场传感器121之间的相对位置(如夹角)发生变化，通过磁场传感器对磁场变化的测量，即可实现对声学装置的输出状态的控制。在本说明书实施例中，图6所示的声学装置中磁性元件与磁场传感器121之间距离的变化相对较大，距离变化产生的磁场强度变化能够淹没地磁场的干扰，故图6所示的声学装置可以用总磁场强度或分量磁场强度来控制声学装置的输出状态。
在一些实施例中，用户对图6中所示的声学装置进行佩戴时，需要将声学装置100上连接有扬声器壳体110和磁场传感器121(或功能件壳体120)的耳挂130进行一定的拉伸，使得扬声器壳体110和磁场传感器(或功能件壳体120)能够相向分离一定的距离，然后通过耳挂130的弹性夹持在耳廓两侧保持声学装置100的佩戴稳定性。在一些实施例中，磁性元件与磁场传感器121的距离发生变化会使得总磁场强度产生变化，而地磁场典型值大概为40-50VT，磁性元件与磁场传感器121的距离变化产生的磁场强度变化要高于地磁场典型值，才能淹没地磁场的干扰，因此优选地，磁性元件与磁场传感器121距离变化可以大于10mm。可以理解的是，图6中所示的声学装置100的体型较小，用户对耳挂130进行一定的拉伸，足以使得扬声器壳体110内的磁性元件和磁场传感器121的距离得到显著的变化，此时磁场传感器121处的总磁场强度也相应发生显著变化，因此可以根据总磁场强度的变化控制声学装置100的输出状态。
图7A是根据本说明书一些实施例所示的单磁场传感器示意图。
如图7A所示，在一些实施例中，声学装置100可以用单个磁场传感器121检测空间磁场的变化，磁场传感器121内设置有一个磁场敏感件S1。磁场传感器121内的磁场敏感件S1需要同时测量来自地磁场和振动组件111内磁源(例如扬声器内的永磁体)的分量磁场强度。磁场传感器121测量的总磁场强度分量是分量地磁场强度和分量磁源磁场强度的矢量叠加。具体地，如图7A所示，磁场敏感件S1测量到的分量磁场强度为Bx、By和Bz，其中：Bx＝Bex+Bsx、By＝Bey+Bsy以及Bz＝Bez+Bsz。其中，Bex、Bey、Bez分别表示地磁场在磁场敏感件S1处的三轴向分量磁场强度，Bsx、Bsy、Bsz分别表示振动组件111内磁源在磁场敏感件S1处的三轴向分量磁场强度。由此可见，地磁场会对单个磁场敏感件S1处的磁场强度的结果(即Bx、By和Bz)产生干扰，导致声学装置100佩戴状态检测的准确性和稳定性受到影响。
图7B是根据本说明书一些实施例所示的双磁场传感器的示意图。
如图7B所示，在一些实施例中，声学装置100可以用两个磁场传感器121检测空间磁场的变化。两个磁场传感器121可以是两个独立的磁场传感器，也可以是一个磁场传感器121包括两个磁场敏感件，如图7B所示的S1和S2，控制电路可以对两个磁场敏感件S1和S2读取的空间磁场进行差分处理，并根据差分结果确定空间磁场的变化情况，从而控制声学装置100的输出状态。具体地，当使用双磁场传感器121时，磁场敏感件S1处测得的分量磁场强度为Bx、By和Bz，磁场敏感件S2处测得的分量磁场强度为Bx'、By'和Bz'。这两组分量磁场强度均为分量地磁场强度和分量磁源磁场强 度的矢量叠加。具体地，对于S1处测得的分量磁场强度：Bx＝Bex+Bsx、By＝Bey+Bsy以及Bz＝Bez+Bsz；对于S2处测得的分量磁场强度：Bx'＝Bex'+Bsx'、By'＝Bey'+Bsy'以及Bz'＝Bez'+Bsz'。其中，Bex'、Bey'、Bez'分别表示地磁场在磁场敏感件S2处的三轴向分量磁场强度，Bsx'、Bsy'、Bsz'分别表示振动组件111内磁源在磁场敏感件S2处的三轴向分量磁场强度。在一些实施例中，由于两个磁场敏感件之间的距离非常近，地磁场在双磁场敏感件之间可以近似看作是均匀磁场，则Bex＝Bex'、Bey＝Bey'、Bez＝Bez'。其中，Bex、Bey、Bez分别表示地磁场在磁场传感器121内的磁场敏感件S1处的三轴向分量磁场强度；Bex'、Bey'、Bez'分别表示地磁场在磁场传感器121内的磁场敏感件S2处的三轴向分量磁场强度；将双磁场敏感件处测得的两组分量磁场强度进行差分处理，即将S2处测得的分量磁场强度Bx'、By'和Bz'分别减去S1处测得的分量磁场强度Bx、By和Bz，可以得到：dBx＝Bx'–Bx＝Bex'+Bsx'-Bex-Bsx＝Bsx'–Bsx、dBy＝By'-By＝Bey'+Bsy'-Bey-Bsy＝Bsy'-Bsy、dBz＝Bz'-Bz＝Bez'+Bsz'-Bez-Bs＝Bsz'-Bsz，其中，dBx、dBy、dBz分别为双磁场敏感件处对两组分量磁场强度进行差分处理后得到的双磁场敏感件位置的三个轴向分量磁场强度差值，dBx、dBy、dBz可以表示双磁场敏感件处的实际空间磁场的各轴向分量磁场强度差值。从上述可知，对双磁场敏感件处测得的两组分量磁场强度进行差分处理后得到的实际磁场强度仅与声学装置100内磁源在双磁场敏感件的分量磁场强度有关，与地磁场等外界磁场强度无关。
在本说明书一些实施例中，使用两个或两个以上的磁场传感器121形成阵列，或者单个磁场传感器121中包含有两个或两个以上的磁场敏感件，可以提高对地球磁场等外界环境磁场的抗干扰能力。
在一些实施例中，两个磁场敏感件的敏感轴平行。敏感轴是指磁场敏感件在空间中对磁场变化敏感的方向，包括磁场传感器121的厚度方向X、长轴方向Y、短轴方向Z。在本说明书一些实施例中，将两个磁场敏感件的敏感轴设置为平行，使得两个磁场敏感件在相同方向上对空间磁场变化具有相似的响应，有助于在进行差分处理时，更有效地消除外界磁场干扰。在另一些实施例中，两个磁场敏感件的敏感轴可以呈一定角度进行设置(例如45度)，使得两个磁场敏感件可以分别在不同方向上读取到空间磁场强度，通过计算得到空间磁场在不同方向(例如，X、Y、Z)上的分量，再由控制电路对两个磁场敏感件读取的空间磁场进行差分处理，并根据差分结果控制声学装置的输出状态。可以理解的是，不同于两个磁场敏感件的敏感轴为平行设置时，两个磁场敏感件的敏感轴设置成一定角度时，需要对差分处理的算法进行调整以适应敏感轴之间的角度差异，其同样能够消除地磁场等外界磁场的干扰，实现声学装置的输出状态的精准控制。在本说明书一些实施例中，通过两个磁场敏感件的敏感轴呈一定角度进行设置，可以使得两个磁场敏感件在磁场传感器121中设置更灵活。
在一些实施例中，至少两个磁场敏感件可以设置在电路主板和/或电池主板上，且位于靠近扬声器壳体110的半侧主板上。在另一些实施例中，两个磁场敏感件还可以设置在柔性印刷电路板(FPC)，并通过电线连接到主板。
在本说明书一些实施例中，将两个磁场敏感件直接放置在电路主板和/或电池主板上位于靠近扬声器壳体110的半侧主板上，可以降低需要布线的长度，减少声学装置的复杂度和故障率。
在一些实施例中，至少两个磁场敏感件彼此不重合。例如，两个磁场敏感件与同一磁性元件之间的距离不同。磁场敏感件与磁性元件之间的距离可以是指磁场敏感件的几何中心与磁性元件的几何中心之间的距离。又例如，两个磁场敏感件与磁性元件的相对位置角度不同。相对位置角度可以用磁场敏感件与磁性元件之间的连线(磁场敏感件的几何中心与磁性元件的几何中心的连线)与特定方向(例如，磁场传感器121的厚度方向X、长轴方向Y、短轴方向Z)之间所成的夹角表示。在一些实施例中，两个磁场敏感件之间的距离相较于地磁场来说很近，所以地磁场等外部磁场在两个磁场敏感件之间的影响相对较小；而由于两个磁场敏感件彼此不重合，磁性元件产生的磁场在两个磁场敏感件处的磁场强度会有明显差异。可以理解的是，当两个磁场敏感件彼此不重合时，两个磁场敏感件检测到的磁性元件产生的磁场强度不同，这种差异可以更好地区分磁性元件产生的磁场强度变化和地磁场等外部磁场干扰。在本说明书一些实施例中，两个磁场敏感件彼此不重合，使得磁性元件产生的磁场在两个磁场敏感件处具有不同的磁场强度，以便于对两个磁场敏感件读取的空间磁场进行差分处理，提高声学装置100的输出状态的准确性。
在一些实施例中，两个磁场敏感件在磁场传感器121内彼此不重合会导致两个磁场敏感件的敏感轴方向与由磁性元件产生的穿过磁场传感器121的磁场线矢量方向之间所形成的空间夹角不同。这些差异可以使得磁场传感器121更好地区分磁场敏感件处的磁场强度变化和地磁场等外部磁场干扰。
在一些实施例中，两个磁场敏感件之间的距离范围可以为0.1mm～20mm。在一些实施例中，两个磁场敏感件之间的距离范围可以为0.1mm～10mm。在一些实施例中，两个磁场敏感件之间的距离范围可以为1mm～10mm。优选地，两个磁场敏感件之间的距离范围可以设置为1mm～5mm，在该距离范 围内地磁场等外界磁场在空间上的变化相对较小，则在这两个磁场敏感件之间的范围内，地磁场等外界磁场可以近似认为是均匀磁场。可以理解的是，在对两个磁场敏感件读取的空间磁场进行差分处理的过程中，两个磁场敏感件分别测量到的磁场强度之间的差异大小会影响差分处理的准确性，而由于地磁场等外界磁场在该距离范围内能够近似看作是均匀磁场，故地磁场等外界磁场对两个磁场敏感件的影响能够近似看作是相同的。因此，在对两个磁场敏感件读取的空间磁场进行差分处理时，来自地磁场等外界磁场的影响会相互抵消，从而突显出由声学装置100的磁源产生的磁场差异，此时差分处理能够排除外界磁场的干扰，提高声学装置100的输出状态的准确性。
在本说明书一些实施例中，通过设置两个磁场敏感件之间的距离在合适范围内，可以使得地磁场等外界磁场在两个磁场敏感件之间能够近似看作是均匀磁场，以便于对两个磁场敏感件读取的空间磁场进行差分处理。
图8是根据本说明书一些实施例所示的磁吸接口的示意图。
如图8所示，在一些实施例中，声学装置100设有磁吸接口123，磁吸接口123设置在电路主板122上，且远离扬声器壳体110的半侧主板上，磁吸接口123与磁场敏感件(即磁场传感器121)之间的最小距离大于等于5mm。在一些实施例中，磁吸接口123可以是用于对声学装置100进行充电的磁吸充电接口。在本说明书实施例中，部分声学装置100可以设计成在电路主板122的尾部(电路主板122远离扬声器壳体110的半侧主板)设有一个磁吸充电接口即磁吸接口123，因为磁吸接口123中包含至少一颗永磁体，该永磁体也会在周围的空间形成一个磁场，因此磁场传感器121实际测得的空间磁场为第一扬声器111-1、第二扬声器111-2、磁吸接口123以及外界地磁等共同构成的复合磁场。其中，磁吸接口123相对磁场传感器121的位置是固定不变，因此磁吸接口123在磁场传感器121处产生的磁场为固定磁场，容易通过算法校准进行消除。在一些实施例中，当磁吸接口123在磁场传感器121处产生磁场强度过大时，会降低磁场传感器121对扬声器位置进行识别的灵敏度。因此，为了降低磁吸接口的影响，防止磁场传感器121超出量程，磁吸接口123与磁场传感器121的最小距离可以设置为大于等于5mm。在一些实施例中，为了降低磁吸接口的影响，防止磁场传感器121超出量程，磁吸接口123与磁场传感器121的最小距离可以设置为大于等于8mm。
在本说明书一些实施例中，通过设置磁吸接口123，可以方便快捷地对声学装置100进行充电，而进一步通过合理设置磁吸接口123与磁场敏感件之间的距离，在保证对声学装置100方便快捷地进行充电的同时，还可以降低磁吸接口123产生的空间磁场对磁场传感器121读取的磁场强度的影响，从而提高磁场传感器121对磁性元件位置进行识别的灵敏度。
图9A是根据本说明书一些实施例所示的两个磁场敏感件的位置的示意图；图9B是根据本说明书一些实施例所示的两个磁场敏感件的验证结果示意图。
如图9A所示，在声学装置100中将两个磁场敏感件S1和S2的间距L1设置为2mm，两个磁场敏感件S1和S2的各敏感轴保持相互平行，并将两个磁场敏感件S1和S2放置在声学装置100的第一功能件壳体120-1内且靠近扬声器即扬声器壳体110的一侧。通过对两个磁场敏感件S1和S2的各轴向分量磁场强度进行差分处理(参见上文图7B以及相关内容)，可以得到磁场传感器121处的实际三轴向分量磁场强度为dBx、dBy、dBz。如图9B所示，x轴表示声学装置100的输出状态(第一输出状态或第二输出状态)，y轴表示磁场传感器121处的实际三轴向分量磁场强度dBx、dBy、dBz的大小，曲线S为对三个轴向分量磁场强度dBx、dBy、dBz进行综合计算处理得到，例如，曲线S上的值可以为dBx、dBy、dBz的求和平均值。从图中能够看出，dBx、dBy、dBz曲线与曲线S的变化情况同步或近似同步，当曲线S(或dBx、dBy、dBz)为高电平时，声学装置100的输出状态为第二输出状态(对应耳机为佩戴状态)，当曲线S(或dBx、dBy、dBz)为低电平时，声学装置100的输出状态为第一输出状态(对应耳机为非佩戴状态)。可以理解的是，dBx、dBy、dBz均能够发生显著变化并准确反映声学装置100的输出状态(或耳机的佩戴状态)的变化，判断过程同理于曲线S。在本说明实施例中，在试验过程中，行走、跳跃、跑步、晃动等行为均未影响到磁场传感器121的判别结果，表明两个磁场传感器121或一个磁场传感器121封装有两个磁场敏感件S1和S2对声学装置100的输出状态的方案具有极高的稳定性和可重复性，对于地磁场等外界磁场干扰具有极强的抗干扰能力。
在一些实施例中，磁场传感器121可以读取空间磁场的总磁场强度，并根据总磁场强度控制声学装置100的输出状态。
图10是根据本说明书一些实施例所示的接近传感器放置在主板仓的示意图；图11是根据本说明书一些实施例所示的接近传感器放置在扬声器仓的示意图。
在一些实施例中，声学装置100还可以包括接近传感器124。如图10所示，接近传感器124可以设置在主板仓(即功能件壳体120所形成的仓体)中靠近人体的一侧。如图11所示，接近传感器 124设置扬声器壳体110内。在一些实施例中，接近传感器124可以用于检测人体皮肤的靠近，当接近传感器124靠近人体时，待测值发生显著变化，当待测值达到预设阈值时，可以控制声学装置100的输出状态为第二输出状态。以声学装置100应用于耳机为例，当用户佩戴耳机时，接近传感器124靠近人体皮肤，待测值发生变化直至达到预设阈值，此时可以控制声学装置100的输出状态为第二输出状态，此时对应耳机为佩戴状态。其中，待测值是指接近传感器124所测得的信号值(例如，电容值、光强度等)，可以用于表示接近传感器124与人体皮肤的距离，以帮助控制声学装置100的输出状态(或判断耳机是否处于佩戴状态)；预设阈值可以是用于控制声学装置100的输出状态的预设参数。在一些实施例中，预设阈值可以根据接近传感器124测量的信号值来设定。具体地，当声学装置100靠近或接触用户的皮肤时，接近传感器124的待测值会发生显著变化。当待测值超过或等于预设阈值时，此时可以认为声学装置100已经处于佩戴状态，控制电路控制声学装置100处于第二输出状态；反之，如果待测值低于预设阈值，则可以认为声学装置100处于非佩戴状态，控制电路控制声学装置100处于第一输出状态。在一些实施例中，可以联合使用磁场传感器121和接近传感器124来控制声学装置100的输出状态。例如，当控制电路判断磁场传感器121检测到各轴向分量磁场强度位于阈值区间，且接近传感器124的待测值达到预设阈值时，可以控制声学装置100为第二输出状态；否则控制电路控制声学装置100为第一输出状态。在一些实施例中，接近传感器124可以包括但不限于电容式接近传感器、光电式接近传感器等。
在本说明书一些实施例中，通过使用多种传感器融合的方案可以进一步提高对声学装置100的输出状态控制的准确性，从而降低声学装置100的能耗，延长使用时间；另一方面还能减少用户操作步骤，提高用户体验。
上文已对基本概念做了描述，显然，对于本领域技术人员来说，上述详细披露仅仅作为示例，而并不构成对本说明书的限定。虽然此处并没有明确说明，本领域技术人员可能会对本说明书进行各种修改、改进和修正。该类修改、改进和修正在本说明书中被建议，所以该类修改、改进、修正仍属于本说明书示范实施例的精神和范围。
同时，本说明书使用了特定词语来描述本说明书的实施例。如“一个实施例”、“一实施例”、和/或“一些实施例”意指与本说明书至少一个实施例相关的某一特征、结构或特点。因此，应强调并注意的是，本说明书中在不同位置两次或多次提及的“一实施例”或“一个实施例”或“一个替代性实施例”并不一定是指同一实施例。此外，本说明书的一个或多个实施例中的某些特征、结构或特点可以进行适当的组合。
此外，除非权利要求中明确说明，本说明书所述处理元素和序列的顺序、数字字母的使用、或其他名称的使用，并非用于限定本说明书流程和方法的顺序。尽管上述披露中通过各种示例讨论了一些目前认为有用的发明实施例，但应当理解的是，该类细节仅起到说明的目的，附加的权利要求并不仅限于披露的实施例，相反，权利要求旨在覆盖所有符合本说明书实施例实质和范围的修正和等价组合。例如，虽然以上所描述的系统组件可以通过硬件设备实现，但是也可以只通过软件的解决方案得以实现，如在现有的服务器或移动设备上安装所描述的系统。
同理，应当注意的是，为了简化本说明书披露的表述，从而帮助对一个或多个发明实施例的理解，前文对本说明书实施例的描述中，有时会将多种特征归并至一个实施例、附图或对其的描述中。但是，这种披露方法并不意味着本说明书对象所需要的特征比权利要求中提及的特征多。实际上，实施例的特征要少于上述披露的单个实施例的全部特征。
一些实施例中使用了描述成分、属性数量的数字，应当理解的是，此类用于实施例描述的数字，在一些示例中使用了修饰词“大约”、“近似”或“大体上”来修饰。除非另外说明，“大约”、“近似”或“大体上”表明所述数字允许有±20％的变化。相应地，在一些实施例中，说明书和权利要求中使用的数值参数均为近似值，该近似值根据个别实施例所需特点可以发生改变。在一些实施例中，数值参数应考虑规定的有效数位并采用一般位数保留的方法。尽管本说明书一些实施例中用于确认其范围广度的数值域和参数为近似值，在具体实施例中，此类数值的设定在可行范围内尽可能精确。
针对本说明书引用的每个专利、专利申请、专利申请公开物和其他材料，如文章、书籍、说明书、出版物、文档等，特此将其全部内容并入本说明书作为参考。与本说明书内容不一致或产生冲突的申请历史文件除外，对本说明书权利要求最广范围有限制的文件(当前或之后附加于本说明书中的)也除外。需要说明的是，如果本说明书附属材料中的描述、定义、和/或术语的使用与本说明书所述内容有不一致或冲突的地方，以本说明书的描述、定义和/或术语的使用为准。
最后，应当理解的是，本说明书中所述实施例仅用以说明本说明书实施例的原则。其他的变形也可能属于本说明书的范围。因此，作为示例而非限制，本说明书实施例的替代配置可视为与本说明书 的教导一致。相应地，本说明书的实施例不仅限于本说明书明确介绍和描述的实施例。

Claims (20)

  1. 一种声学装置，包括：
    扬声器壳体，所述扬声器壳体内包含至少一个磁性元件；
    磁场传感器，被配置为读取空间磁场；其中，
    所述磁性元件和所述磁场传感器的相对位置发生变化导致所述空间磁场变化时，所述声学装置的输出状态变化。
  2. 根据权利要求1所述的声学装置，其中，所述磁场传感器包括至少两个磁场敏感件。
  3. 根据权利要求2所述的声学装置，其中，所述至少两个磁场敏感件平行设置。
  4. 根据权利要求2所述的声学装置，其中，所述声学装置设有主板仓，所述主板仓中容纳有电路主板和/或电池主板，所述至少两个磁场敏感件设置在电路主板和/或电池主板上，且位于靠近所述扬声器壳体的半侧主板上。
  5. 根据权利要求2所述的声学装置，其中，所述至少两个磁场敏感件彼此不重合。
  6. 根据权利要求2所述的声学装置，其中，所述至少两个磁场敏感件之间的距离范围为0.1mm～20mm。
  7. 根据权利要求6所述的声学装置，其中，所述至少两个磁场敏感件的距离为1mm～10mm。
  8. 根据权利要求2所述的声学装置，其中，所述声学装置设有磁吸接口，所述磁吸接口与所述至少两个磁场敏感件之间的最小距离大于等于5mm。
  9. 根据权利要求1所述的声学装置，其中，所述声学装置还包括接近传感器，所述声学装置设有主板仓，所述接近传感器被设置在所述扬声器壳体和/或所述主板仓中靠近人体的一侧。
  10. 根据权利要求1所述的声学装置，其中，所述声学装置包括耳挂，所述扬声器壳体与所述磁场传感器通过所述耳挂连接。
  11. 根据权利要求10所述的声学装置，其中，所述扬声器壳体和所述磁场传感器通过所述耳挂夹持在耳廓两侧。
  12. 根据权利要求10所述的声学装置，其中，所述耳挂包括第一耳挂和第二耳挂，所述扬声器壳体包括第一扬声器壳体和第二扬声器壳体，所述声学装置还包括后挂；其中，所述第一耳挂连接所述第一扬声器壳体，所述第二耳挂连接所述第二扬声器壳体，所述后挂连接所述第一耳挂和所述第二耳挂。
  13. 根据权利要求1所述的声学装置，其中，所述声学装置包括控制电路，所述控制电路被配置为根据所述空间磁场的变化控制所述声学装置的输出状态。
  14. 根据权利要求13所述的声学装置，其中，所述磁场传感器读取所述空间磁场在特定方向的磁场强度，所述控制电路根据所述磁场强度控制所述声学装置的输出状态。
  15. 根据权利要求14所述的声学装置，其中，所述控制电路判断所述磁场强度所在的阈值区间，并根据所述磁场强度所在的所述阈值区间控制所述声学装置的输出状态。
  16. 根据权利要求15所述的声学装置，其中，所述阈值区间包括第一阈值区间和第二阈值区间，所述磁场强度位于所述第一阈值区间时，所述声学装置为第一输出状态；所述磁场强度位于所述第二阈值区间时，所述声学装置为第二输出状态。
  17. 根据权利要求13所述的声学装置，其中，所述磁场传感器包括至少两个磁场敏感件，所述控制电路对所述至少两个磁场敏感件读取的空间磁场进行差分处理，并根据差分结果控制所述声学装置的输出状态。
  18. 根据权利要求13所述的声学装置，其中，所述声学装置还包括接近传感器，所述控制电路根据所述接近传感器的检测结果和所述磁场传感器读取的空间磁场控制所述声学装置的输出状态。
  19. 根据权利要求1～18中任一项所述的声学装置，其中，所述磁场传感器包括霍尔传感器、AMR传感器、GMR传感器或TMR传感器。
  20. 一种耳机，包括：如权利要求1～19中任一项所述的声学装置，所述控制电路根据所述声学装置的输出状态识别所述耳机的佩戴状态。
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Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20170289671A1 (en) * 2016-03-31 2017-10-05 Bose Corporation Performing an operation at a headphone system
CN107682773A (zh) * 2017-11-28 2018-02-09 深圳市率先电器有限公司 外响颈挂式蓝牙耳机
CN110888620A (zh) * 2019-11-29 2020-03-17 歌尔科技有限公司 一种头戴式设备及其佩戴检测方法、装置、介质
CN113099347A (zh) * 2021-04-07 2021-07-09 南京紫牛软件科技有限公司 耳机控制方法、装置、无线耳机及存储介质
CN113342301A (zh) * 2021-05-18 2021-09-03 安克创新科技股份有限公司 一种音频播放方法及穿戴设备
CN113709622A (zh) * 2021-09-23 2021-11-26 歌尔科技有限公司 头戴电子设备状态检测方法、装置、头戴电子设备及介质

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9986349B2 (en) * 2014-07-17 2018-05-29 Cochlear Limited Magnetic user interface controls
TWI657702B (zh) * 2016-02-04 2019-04-21 美律實業股份有限公司 耳機裝置

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20170289671A1 (en) * 2016-03-31 2017-10-05 Bose Corporation Performing an operation at a headphone system
CN107682773A (zh) * 2017-11-28 2018-02-09 深圳市率先电器有限公司 外响颈挂式蓝牙耳机
CN110888620A (zh) * 2019-11-29 2020-03-17 歌尔科技有限公司 一种头戴式设备及其佩戴检测方法、装置、介质
CN113099347A (zh) * 2021-04-07 2021-07-09 南京紫牛软件科技有限公司 耳机控制方法、装置、无线耳机及存储介质
CN113342301A (zh) * 2021-05-18 2021-09-03 安克创新科技股份有限公司 一种音频播放方法及穿戴设备
CN113709622A (zh) * 2021-09-23 2021-11-26 歌尔科技有限公司 头戴电子设备状态检测方法、装置、头戴电子设备及介质

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
See also references of EP4626020A4 *

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