WO2025010726A1 - 一种扬声器 - Google Patents

一种扬声器 Download PDF

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Publication number
WO2025010726A1
WO2025010726A1 PCT/CN2023/107256 CN2023107256W WO2025010726A1 WO 2025010726 A1 WO2025010726 A1 WO 2025010726A1 CN 2023107256 W CN2023107256 W CN 2023107256W WO 2025010726 A1 WO2025010726 A1 WO 2025010726A1
Authority
WO
WIPO (PCT)
Prior art keywords
piezoelectric
sound
electrode layer
layer
diaphragm
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/CN2023/107256
Other languages
English (en)
French (fr)
Inventor
周文兵
廖风云
齐心
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Shenzhen Shokz Co Ltd
Original Assignee
Shenzhen Shokz Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Shenzhen Shokz Co Ltd filed Critical Shenzhen Shokz Co Ltd
Priority to CN202380048527.9A priority Critical patent/CN119654879A/zh
Priority to EP23944743.6A priority patent/EP4576823A4/en
Priority to PCT/CN2023/107256 priority patent/WO2025010726A1/zh
Publication of WO2025010726A1 publication Critical patent/WO2025010726A1/zh
Priority to US19/083,520 priority patent/US20250247653A1/en
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04R—LOUDSPEAKERS, MICROPHONES, GRAMOPHONE PICK-UPS OR LIKE ACOUSTIC ELECTROMECHANICAL TRANSDUCERS; ELECTRIC HEARING AIDS; PUBLIC ADDRESS SYSTEMS
    • H04R17/00—Piezoelectric transducers; Electrostrictive transducers
    • G—PHYSICS
    • G02—OPTICS
    • G02C—SPECTACLES; SUNGLASSES OR GOGGLES INSOFAR AS THEY HAVE THE SAME FEATURES AS SPECTACLES; CONTACT LENSES
    • G02C11/00—Non-optical adjuncts; Attachment thereof
    • G02C11/10—Electronic devices other than hearing aids
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04R—LOUDSPEAKERS, MICROPHONES, GRAMOPHONE PICK-UPS OR LIKE ACOUSTIC ELECTROMECHANICAL TRANSDUCERS; ELECTRIC HEARING AIDS; PUBLIC ADDRESS SYSTEMS
    • H04R1/00—Details of transducers, loudspeakers or microphones
    • H04R1/20—Arrangements for obtaining desired frequency or directional characteristics
    • H04R1/32—Arrangements for obtaining desired frequency or directional characteristics for obtaining desired directional characteristic only
    • H04R1/40—Arrangements for obtaining desired frequency or directional characteristics for obtaining desired directional characteristic only by combining a number of identical transducers
    • H04R1/403—Arrangements for obtaining desired frequency or directional characteristics for obtaining desired directional characteristic only by combining a number of identical transducers loud-speakers
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04R—LOUDSPEAKERS, MICROPHONES, GRAMOPHONE PICK-UPS OR LIKE ACOUSTIC ELECTROMECHANICAL TRANSDUCERS; ELECTRIC HEARING AIDS; PUBLIC ADDRESS SYSTEMS
    • H04R7/00—Diaphragms for electromechanical transducers; Cones
    • H04R7/02—Diaphragms for electromechanical transducers; Cones characterised by the construction
    • H04R7/04—Plane diaphragms
    • H04R7/06—Plane diaphragms comprising a plurality of sections or layers
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04R—LOUDSPEAKERS, MICROPHONES, GRAMOPHONE PICK-UPS OR LIKE ACOUSTIC ELECTROMECHANICAL TRANSDUCERS; ELECTRIC HEARING AIDS; PUBLIC ADDRESS SYSTEMS
    • H04R1/00—Details of transducers, loudspeakers or microphones
    • H04R1/02—Casings; Cabinets ; Supports therefor; Mountings therein
    • H04R1/023—Screens for loudspeakers
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04R—LOUDSPEAKERS, MICROPHONES, GRAMOPHONE PICK-UPS OR LIKE ACOUSTIC ELECTROMECHANICAL TRANSDUCERS; ELECTRIC HEARING AIDS; PUBLIC ADDRESS SYSTEMS
    • H04R1/00—Details of transducers, loudspeakers or microphones
    • H04R1/02—Casings; Cabinets ; Supports therefor; Mountings therein
    • H04R1/028—Casings; Cabinets ; Supports therefor; Mountings therein associated with devices performing functions other than acoustics, e.g. electric candles
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04R—LOUDSPEAKERS, MICROPHONES, GRAMOPHONE PICK-UPS OR LIKE ACOUSTIC ELECTROMECHANICAL TRANSDUCERS; ELECTRIC HEARING AIDS; PUBLIC ADDRESS SYSTEMS
    • H04R1/00—Details of transducers, loudspeakers or microphones
    • H04R1/06—Arranging circuit leads; Relieving strain on circuit leads
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04R—LOUDSPEAKERS, MICROPHONES, GRAMOPHONE PICK-UPS OR LIKE ACOUSTIC ELECTROMECHANICAL TRANSDUCERS; ELECTRIC HEARING AIDS; PUBLIC ADDRESS SYSTEMS
    • H04R1/00—Details of transducers, loudspeakers or microphones
    • H04R1/20—Arrangements for obtaining desired frequency or directional characteristics
    • H04R1/22—Arrangements for obtaining desired frequency or directional characteristics for obtaining desired frequency characteristic only 
    • H04R1/227—Arrangements for obtaining desired frequency or directional characteristics for obtaining desired frequency characteristic only  using transducers reproducing the same frequency band
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04R—LOUDSPEAKERS, MICROPHONES, GRAMOPHONE PICK-UPS OR LIKE ACOUSTIC ELECTROMECHANICAL TRANSDUCERS; ELECTRIC HEARING AIDS; PUBLIC ADDRESS SYSTEMS
    • H04R1/00—Details of transducers, loudspeakers or microphones
    • H04R1/20—Arrangements for obtaining desired frequency or directional characteristics
    • H04R1/22—Arrangements for obtaining desired frequency or directional characteristics for obtaining desired frequency characteristic only 
    • H04R1/24—Structural combinations of separate transducers or of two parts of the same transducer and responsive respectively to two or more frequency ranges
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04R—LOUDSPEAKERS, MICROPHONES, GRAMOPHONE PICK-UPS OR LIKE ACOUSTIC ELECTROMECHANICAL TRANSDUCERS; ELECTRIC HEARING AIDS; PUBLIC ADDRESS SYSTEMS
    • H04R1/00—Details of transducers, loudspeakers or microphones
    • H04R1/20—Arrangements for obtaining desired frequency or directional characteristics
    • H04R1/22—Arrangements for obtaining desired frequency or directional characteristics for obtaining desired frequency characteristic only 
    • H04R1/26—Spatial arrangements of separate transducers responsive to two or more frequency ranges
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04R—LOUDSPEAKERS, MICROPHONES, GRAMOPHONE PICK-UPS OR LIKE ACOUSTIC ELECTROMECHANICAL TRANSDUCERS; ELECTRIC HEARING AIDS; PUBLIC ADDRESS SYSTEMS
    • H04R1/00—Details of transducers, loudspeakers or microphones
    • H04R1/20—Arrangements for obtaining desired frequency or directional characteristics
    • H04R1/22—Arrangements for obtaining desired frequency or directional characteristics for obtaining desired frequency characteristic only 
    • H04R1/28—Transducer mountings or enclosures modified by provision of mechanical or acoustic impedances, e.g. resonator, damping means
    • H04R1/2807—Enclosures comprising vibrating or resonating arrangements
    • H04R1/2838—Enclosures comprising vibrating or resonating arrangements of the bandpass type
    • H04R1/2842—Enclosures comprising vibrating or resonating arrangements of the bandpass type for loudspeaker transducers
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04R—LOUDSPEAKERS, MICROPHONES, GRAMOPHONE PICK-UPS OR LIKE ACOUSTIC ELECTROMECHANICAL TRANSDUCERS; ELECTRIC HEARING AIDS; PUBLIC ADDRESS SYSTEMS
    • H04R2201/00—Details of transducers, loudspeakers or microphones covered by H04R1/00 but not provided for in any of its subgroups
    • H04R2201/003—Mems transducers or their use
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04R—LOUDSPEAKERS, MICROPHONES, GRAMOPHONE PICK-UPS OR LIKE ACOUSTIC ELECTROMECHANICAL TRANSDUCERS; ELECTRIC HEARING AIDS; PUBLIC ADDRESS SYSTEMS
    • H04R9/00—Transducers of moving-coil, moving-strip, or moving-wire type
    • H04R9/02—Details
    • H04R9/04—Construction, mounting, or centering of coil
    • H04R9/046—Construction
    • H04R9/047—Construction in which the windings of the moving coil lay in the same plane

Definitions

  • the present invention relates to the field of acoustic technology, and in particular to a loudspeaker.
  • Audio devices including open headphones, wireless headphones, audio glasses, etc., have gradually increased their requirements for acoustic performance in the low-frequency range.
  • Existing electromagnetic speakers require a large movement range to ensure sufficient sound pressure level at low frequencies, resulting in a larger thickness of the device.
  • a speaker comprising: a plurality of sound-emitting units arranged at intervals along a first direction, the plurality of sound-emitting units all vibrating along the first direction; a shell configured to accommodate and support the plurality of sound-emitting units, the shell being provided with a plurality of sound outlet holes, the shell and the plurality of sound-emitting units forming a plurality of acoustic cavities, each acoustic cavity being acoustically coupled to at least one sound outlet hole on the shell, wherein the plurality of sound-emitting units each comprises a diaphragm and a driving structure arranged on the diaphragm.
  • One of the embodiments of the present specification also provides an acoustic output device, comprising: a low frequency unit and a high frequency unit, wherein the low frequency unit comprises the loudspeaker as described above, wherein the intersection of the frequency response curves of the low frequency unit and the high frequency unit is within the range of 300 Hz-1000 Hz.
  • FIG1A is a schematic diagram of the structure of a speaker according to some embodiments of this specification.
  • FIG1B is a cross-sectional view of the speaker shown in FIG1A ;
  • FIG1C is a first view of a cross section of the loudspeaker shown in FIG1B ;
  • FIG2A is a simplified structural diagram of a cross section of a loudspeaker according to some embodiments of the present specification
  • FIG2B is a simplified structural diagram of a cross section of a loudspeaker when a diaphragm vibrates according to some embodiments of this specification;
  • FIG3A is a schematic diagram of the structure of a fixing ring and an electrode according to some embodiments of the present specification
  • Fig. 3B is a cross-sectional view taken along line A-A in Fig. 3A;
  • FIG4A is a schematic diagram of the structure of a sound generating unit according to some embodiments of the present specification.
  • FIG4B is a schematic diagram of a structure of a speaker having one sound unit according to some embodiments of this specification.
  • FIG5 is a top view of the speaker shown in FIG4B ;
  • FIG6 is a schematic diagram of the structure of a sound generating unit according to some embodiments of the present specification.
  • FIG7 is a schematic diagram of the structure of a sound generating unit according to other embodiments of the present specification.
  • FIG8 is a schematic diagram of the structure of a sound generating unit according to some other embodiments of the present specification.
  • FIG9 is a schematic diagram of the structure of a sound generating unit according to some other embodiments of the present specification.
  • FIG10 is a cross-sectional view of a piezoelectric drive structure according to some embodiments of the present specification.
  • FIG. 11A is a schematic diagram of a piezoelectric drive structure before deformation according to some embodiments of the present specification.
  • FIG11B is a schematic diagram of a piezoelectric drive structure after deformation according to some embodiments of this specification.
  • FIG12A is a schematic diagram of polarization directions of each piezoelectric layer of a piezoelectric driving structure according to some embodiments of this specification;
  • FIG12B is a schematic diagram of polarization directions of each piezoelectric layer of a piezoelectric driving structure according to some embodiments of this specification;
  • FIG13A is a schematic diagram of a piezoelectric drive structure before deformation according to some embodiments of this specification.
  • FIG13B is a schematic diagram of a piezoelectric drive structure after deformation according to some embodiments of this specification.
  • FIG14A is a schematic diagram of polarization directions of each piezoelectric layer of a piezoelectric driving structure according to some embodiments of this specification;
  • FIG14B is a schematic diagram of polarization directions of each piezoelectric layer of a piezoelectric driving structure according to some embodiments of this specification;
  • FIG14C is a schematic diagram of polarization directions of each piezoelectric layer of a piezoelectric driving structure according to some embodiments of this specification;
  • FIG14D is a schematic diagram of polarization directions of each piezoelectric layer of a piezoelectric driving structure according to some embodiments of this specification.
  • FIG. 15 is a frequency response curve diagram of a loudspeaker corresponding to different values of ⁇ according to some embodiments of this specification.
  • FIG16 is a schematic diagram of a quarter structure of a piezoelectric drive structure according to some embodiments of this specification.
  • FIG. 17 is a frequency response curve diagram of a loudspeaker corresponding to different values of ⁇ according to some embodiments of this specification.
  • FIG18 is a schematic diagram of the arrangement of mass blocks shown in some embodiments of the specification.
  • FIG19A is a deformation cloud diagram of a diaphragm without a mass block
  • FIG19B is a deformation cloud diagram of a diaphragm with a mass block
  • FIG20 is a schematic diagram of the arrangement of mass blocks shown in some embodiments of the specification.
  • FIG21A is a deformation cloud diagram of a diaphragm without a mass block
  • FIG21B is a deformation cloud diagram of a diaphragm with a mass block
  • FIG22 is a schematic diagram of the arrangement of mass blocks shown in some embodiments of the specification.
  • FIG23A is a deformation cloud diagram of a diaphragm without a mass block
  • FIG23B is a deformation cloud diagram of a diaphragm with a mass block
  • FIG24A is a schematic diagram of the structure of a laminated (10-layer) loudspeaker according to some embodiments of the present specification
  • FIG24B is a frequency response curve diagram of a laminated speaker and a single-layer speaker according to some embodiments of the present specification
  • FIG. 25 is an exemplary schematic diagram of an acoustic output device according to some embodiments of the present specification.
  • FIG. 26A is an exemplary schematic diagram 1 of an acoustic output device according to some other embodiments of the present specification.
  • FIG. 26B is a second exemplary schematic diagram of an acoustic output device according to some embodiments of the present specification.
  • FIG. 27 is an exemplary schematic diagram of an acoustic output device according to yet other embodiments of the present specification.
  • FIG. 28 is a frequency response curve diagram of an acoustic output device according to some embodiments of the present specification.
  • 100 speaker; 110, sound unit; 1101, first sound unit; 1102, second sound unit; 1103, third sound unit; 1104, fourth sound unit; 110n, nth sound unit; 111, diaphragm; 112, driving structure; 1121, planar coil; 1122, magnet; 11221, first magnet; 11222, second magnet; 1123, magnetic plate; 1124, magnetic ring; 1125, piezoelectric driving structure; 1125a, piezoelectric covering area; 1125b, non-piezoelectric covering area; 11251, first electrode layer; 11252, first piezoelectric layer; 11253, second electrode layer; 11254, second piezoelectric layer; 11255, third electrode layer; 11256 , neutral layer; 113, elastic structure; 114, lead; 120, shell; 1201, front shell; 1202, rear shell; 121, sound outlet; 1211, first sound outlet; 1212, second sound outlet; 121i, ith sound outlet; 121(n+1), n+1th sound outlet; 1212-1, 121
  • system means for distinguishing different components, elements, parts, portions or assemblies at different levels.
  • device means for distinguishing different components, elements, parts, portions or assemblies at different levels.
  • unit means for distinguishing different components, elements, parts, portions or assemblies at different levels.
  • the words can be replaced by other expressions.
  • the embodiment of the present specification provides a loudspeaker, which includes a housing and a plurality of sound-emitting units. Among them, the plurality of sound-emitting units are arranged at intervals along a first direction and all vibrate along a first direction.
  • the housing is configured to accommodate and support the plurality of sound-emitting units.
  • the housing is provided with a plurality of sound outlets.
  • the housing and the plurality of sound-emitting units enclose a plurality of acoustic cavities, and each acoustic cavity is acoustically coupled with at least one sound outlet hole on the housing.
  • the sound-emitting unit can generate sound waves, and the sound waves can be transmitted outward through the acoustic cavity in which the sound-emitting unit is located and the sound outlet hole acoustically coupled with the acoustic cavity.
  • the plurality of sound-emitting units each include a diaphragm and a driving structure arranged on the diaphragm.
  • the driving structure drives the diaphragm to vibrate, and the diaphragm in a vibrating state pushes the air in the acoustic cavity to generate sound waves.
  • the embodiment of the present specification optimizes the loudspeaker by setting a plurality of sound-emitting units arranged at intervals along a first direction, so that the loudspeaker can improve the acoustic output, especially the low-frequency output, under the premise of certain restrictions on the volume. And the size of the speaker in the thickness direction can be adjusted by adjusting the number of sound-emitting units in the first direction, so that the speaker can flexibly adapt to the usage scenario.
  • Fig. 1A is a schematic diagram of the structure of a speaker according to some embodiments of the present specification.
  • Fig. 1B is a cross-sectional view of the speaker shown in Fig. 1A.
  • Fig. 1C is a first view of the cross section of the speaker shown in Fig. 1B.
  • a speaker 100 includes a housing 120 and a plurality of sound generating units 110 arranged at intervals along a first direction.
  • the first direction described in the embodiment of this specification refers to the thickness direction of the speaker 100, refer to the z direction shown in Figure 1A.
  • the arrangement plane where the sound unit 110 is located is perpendicular to the thickness direction of the speaker 100 (i.e., the first direction).
  • the description of the direction involved in this specification is not limited to the absolute direction, but may also be an approximate direction.
  • a plurality of sound units 110 arranged at intervals along the first direction may also be arranged at intervals approximately along the first direction.
  • the arrangement plane where the sound unit 110 is located is perpendicular to the first direction, or may be approximately perpendicular.
  • the approximate direction here refers to a direction that forms a certain angle with the absolute direction (e.g., the first direction), and the angle may range from -30° to 30°.
  • the housing 120 is a regular or irregular three-dimensional structure with an accommodating cavity inside.
  • the housing 120 may be a hollow frame structure, including but not limited to regular shapes such as a rectangular frame, a circular frame, a regular polygonal frame, and any irregular shape.
  • the housing 120 is used to accommodate the sound unit 110.
  • the housing 120 may be a rectangular frame structure.
  • this specification takes the housing 120 as an example of a rectangular frame structure.
  • the housing 120 may be made of metal (e.g., stainless steel, copper, aluminum alloy, etc.), plastic (e.g., polyethylene (PE), polypropylene (PP), polyvinyl chloride (PVC), polystyrene (PS) and acrylonitrile-butadiene-styrene copolymer (ABS), etc.), composite materials (e.g., metal-based composite materials or non-metal-based composite materials), epoxy resin, phenolic, ceramics, polyimide, glass fiber (e.g., FR4-glass fiber), semiconductor materials (e.g., silicon, silicon dioxide, silicon nitride, silicon carbide, etc.), etc. or any combination thereof.
  • metal e.g., stainless steel, copper, aluminum alloy, etc.
  • plastic e.g., polyethylene (PE), polypropylene (PP), polyvinyl chloride (PVC), polystyrene (PS) and acrylonitrile-butadiene-styrene cop
  • the sound unit 110 is a device for generating sound waves.
  • the sound unit 110 is located in the accommodating cavity of the housing 120.
  • the sound unit 110 includes a diaphragm and a driving structure.
  • the driving structure is used to convert an audio signal (e.g., an electrical signal containing audio information) into mechanical vibration.
  • the driving structure includes a piezoelectric layer.
  • the piezoelectric layer can convert an audio signal into mechanical vibration. Due to the inverse piezoelectric effect of the piezoelectric layer, when the electrical signal (audio signal) acts on the piezoelectric layer, the piezoelectric layer will generate mechanical vibration.
  • the piezoelectric layer can be made of piezoelectric material, and exemplary piezoelectric materials can include piezoelectric ceramics, piezoelectric crystals, piezoelectric polymers (e.g., polyvinylidene fluoride), etc., or any combination thereof.
  • the driving structure can be of any shape, such as a sheet, block, columnar, annular structure, etc., or any combination thereof.
  • the diaphragm is a component that converts mechanical vibrations from a driving structure into sound waves.
  • the diaphragm can generate vibrations along a first direction in response to the vibrations of the driving structure, thereby generating sound waves (sound signals).
  • the driving structure is disposed on the diaphragm.
  • the diaphragm directly responds to the deformation or displacement of the driving structure to generate vibrations, and can drive the air around the diaphragm to vibrate with a larger proportion of the vibration driving force, thereby generating sound waves.
  • the diaphragm can be a thin film structure with elasticity.
  • the thickness dimension of the speaker 100 is relatively small.
  • the dimension of the thickness direction of the speaker 100 can be flexibly adjusted, and the speaker 100 can obtain a larger low-frequency output while meeting the smaller design dimension.
  • the number of sound units 110 arranged at intervals in the first direction can be determined according to actual needs. For example, the number of sound units 110 arranged at intervals in the first direction is determined according to the requirements for the thickness dimension of the speaker 100. For another example, the number of sound units 110 arranged at intervals in the first direction is determined according to the requirements for the output sound pressure level.
  • a plurality of sound-emitting units 110 arranged at intervals along the first direction divide the housing 120 accommodating cavity into a plurality of acoustic cavities 122 distributed along the first direction.
  • a plurality of sound outlet holes are correspondingly arranged on the housing 120, and each acoustic cavity 122 is acoustically coupled with at least one sound outlet hole on the housing 120, so that each acoustic cavity 122 can be connected to the outside of the speaker 100 to transmit the sound waves generated by the sound-emitting unit 110 to the outside.
  • n sound-emitting units 110 are arranged at intervals along the first direction, and the n sound-emitting units 110 include a first sound-emitting unit 1101, a second sound-emitting unit 1102, ... an nth sound-emitting unit 110n.
  • the housing cavity of the shell 120 is divided into n+1 acoustic cavities 122 distributed along the first direction, and n+1 sound outlet holes are correspondingly arranged on the shell 120, and the n+1 sound outlet holes 121 include a first sound outlet hole 1211, a second sound outlet hole 1212...the n+1th sound outlet hole 121(n+1).
  • Each acoustic cavity 122 is acoustically coupled with a sound outlet hole 121.
  • the sound outlet hole 121 is a hole that passes through the shell 120, connecting the acoustic cavity 122 with the outside of the shell 120.
  • the sound outlet hole 121 can be a hole of regular shape or irregular shape such as a circle, a rectangle, a triangle, etc., and is not limited to the long strip hole as shown in Figures 1A-1C.
  • the housing 120 includes a front housing 1201 and a rear housing 1202.
  • the front housing 1201 is a portion of the housing 120 close to the top of the housing 120 along the first direction
  • the rear housing 1202 is a portion of the housing 120 close to the bottom of the housing 120 along the first direction.
  • a first acoustic cavity 1221 is formed between the front housing 1201 and the adjacent sound unit 110
  • a second acoustic cavity 1222 is formed between the rear housing 1202 and another adjacent sound unit 110
  • a third acoustic cavity 1223 is formed between two adjacent sound units 110
  • the structure enclosing the third acoustic cavity 1223 also includes a portion of the housing 120 between two adjacent sound units 110.
  • the sound unit 110 can generate sound waves in the acoustic cavities 122 above and below it, and the sound waves are transmitted outwardly through the sound outlet holes 121 acoustically coupled with the corresponding acoustic cavities 122. Therefore, the sound unit 110 adjacent to the front housing 1201 exclusively uses the first acoustic cavity 1221, the sound unit 110 adjacent to the rear housing 1202 exclusively uses the second acoustic cavity 1222, and two adjacent sound units 110 (including the sound unit 110 adjacent to the front housing 1201 and the sound unit 110 adjacent to the rear housing 1202) share the third acoustic cavity 1223 therebetween.
  • the first sound unit 1101 exclusively uses the first acoustic cavity 1221, and the first sound unit 1101 and the second sound unit 1102 share the third acoustic cavity 1223 between the first sound unit 1101 and the second sound unit 1102.
  • the sound waves output by the first sound unit 1101 are transmitted outward via the first acoustic cavity 1221 and the third acoustic cavity 1223 between the first sound unit 1101 and the second sound unit 1102.
  • the sound outlet holes 121 corresponding to the first acoustic cavity 1221 are opened upward along the first direction. In some embodiments, the sound outlet holes 121 corresponding to the second acoustic cavity 1222 are opened downward along the first direction. In some embodiments, the sound outlet holes 121 corresponding to the first acoustic cavity 1221, the second acoustic cavity 1222 and the third acoustic cavity 1223 can be opened laterally perpendicular to the first direction. In some embodiments, the laterally opened sound outlet holes 121 can be located on one side along the long side of the speaker 100, or on one side along the short side of the speaker 100.
  • the sound outlet holes 121 corresponding to the adjacent acoustic cavities 122 can be staggered.
  • the sound outlet holes 121 corresponding to the adjacent acoustic cavities 122 are respectively located on opposite sides of the housing 120.
  • the sound outlet holes 121 corresponding to the adjacent acoustic cavities 122 are respectively located on opposite sides of the housing 120 along the long side.
  • the sound outlet holes 121 corresponding to adjacent acoustic cavities 122 are respectively located on two adjacent sides of the shell 120.
  • the sound outlet holes 121 corresponding to one acoustic cavity 122 in the adjacent acoustic cavities 122 are located on one side of the shell 120 along the long side, and the sound outlet holes 121 corresponding to another acoustic cavity 122 in the adjacent acoustic cavity 122 are located on one side of the shell 120 along the short side.
  • the sound outlet holes 121 corresponding to adjacent acoustic cavities 122 are located on the same side of the shell 120, and the sound outlet holes 121 corresponding to the adjacent acoustic cavities 122 are respectively arranged close to two adjacent side surfaces of the shell 120, and the two side surfaces of the shell 120 are relatively distributed.
  • the sound outlet holes 121 corresponding to adjacent acoustic cavities 122 are located on the same side of the shell 120 along the long side, and the sound outlet holes 121 corresponding to the adjacent acoustic cavities 122 are respectively arranged close to two opposite sides of the shell 120 along the short side.
  • the housing 120 includes a plurality of fixing rings 123, and the fixing rings 123 are used to fix the sound unit 110.
  • the plurality of fixing rings 123 are overlapped along the first direction, and the plurality of fixing rings 123 are spliced up and down to form the housing 120 portion between the front housing 1201 and the rear housing 1202, and the sound outlet 121 is provided on the fixing rings 123.
  • the fixing rings 123 close to the front housing 1201 are connected to the front housing 1201, and the fixing rings 123 close to the rear housing 1202 are connected to the rear housing 1202.
  • Fig. 2A is a schematic structural diagram of a cross section of a loudspeaker according to some embodiments of the present specification.
  • Fig. 2B is a schematic structural diagram of a cross section of a loudspeaker when the diaphragm vibrates according to some embodiments of the present specification.
  • Fig. 2A and Fig. 2B exemplarily show four sound generating units 110.
  • the sound unit 110 in the first direction, is disposed in the fixing ring 123.
  • the sound unit 110 in the first direction, is disposed in the middle of the fixing ring 123, that is, the fixing ring 123 is evenly distributed on both sides of the sound unit 110.
  • a first acoustic cavity 1221 may be formed between the front shell 1201 and the first sound unit 1101
  • a second acoustic cavity 1222 may be formed between the rear shell 1202 and the fourth sound unit 1104
  • a third acoustic cavity 1223 may be formed between the first sound unit 1101 and the second sound unit 1102, between the second sound unit 1102 and the third sound unit 1103, and between the third sound unit 1103.
  • the thickness of the first acoustic cavity 1221 and/or the second acoustic cavity 1222 along the first direction is less than the thickness of the third acoustic cavity 1223 along the first direction. It can be understood that, as shown in FIG2A-FIG2B, since the first acoustic cavity 1221 and the second acoustic cavity 1222 are respectively formed by a sound unit 110 and the front shell 1201 and the rear shell 1202, and the third acoustic cavity 1223 is based on two adjacent sound units 110, and since the fixing rings 123 are evenly distributed on both sides of the sound unit 110, the thickness of the third acoustic cavity 1223 along the first direction is greater than the thickness of the first acoustic cavity 1221 and/or the second acoustic cavity 1222 along the first direction.
  • the vibration of the plurality of sound-emitting units 110 along the first direction may include at least one of the plurality of sound-emitting units 110 vibrating in a vertically upward direction and/or at least one of the sound-emitting units 110 vibrating in a vertically downward direction. Further, the vibration of the plurality of sound-emitting units 110 along the first direction may include two adjacent sound-emitting units 110 in the plurality of sound-emitting units 110 that share at least one of the plurality of acoustic cavities 122 vibrating in opposite directions. As shown in FIGS.
  • the first sound-emitting unit 1101 vibrates in a vertically downward direction
  • the second sound-emitting unit 1102 vibrates in a vertically upward direction
  • the third sound-emitting unit 1103 vibrates in a vertically downward direction
  • the fourth sound-emitting unit 1104 vibrates in a vertically upward direction.
  • two adjacent sound units 110 among the multiple sound units 110 and sharing at least one acoustic cavity 122 among the multiple acoustic cavities 122 can vibrate in opposite directions in the full frequency band to enhance the output sound pressure level of the speaker 100 in the full frequency band.
  • two adjacent sound units 110 among the multiple sound units 110 and sharing at least one acoustic cavity 122 among the multiple acoustic cavities 122 vibrate in opposite directions in at least part of the low frequency band to enhance the output sound pressure level of the acoustic output device (e.g., acoustic output device 200) including the speaker 100 in at least part of the low frequency band, meeting the current acoustic output device's requirement for gradually increasing the output sound pressure level of the low frequency band.
  • the acoustic output device e.g., acoustic output device 200
  • the phase difference of the excitation voltages on the two sound-emitting units 110 of at least one acoustic cavity 122 is 180°, so that the two sound-emitting units 110 that are adjacent to each other and share at least one acoustic cavity 122 among the plurality of acoustic cavities 122 can be vibrated in opposite directions in at least a portion of the low-frequency band.
  • a sound-emitting unit having n sound-emitting units 110 can be vibrated in opposite directions in at least a portion of the low-frequency band.
  • the sound pressure level output by the loudspeaker 100 (laminated loudspeaker) with the sound unit 110 increases by 20 ⁇ log 10 (n) times compared to the sound pressure level output by the loudspeaker 100 (single-layer loudspeaker) with only one sound unit 110 .
  • At least part of the low frequency band may include a part of the frequency band less than 500 Hz. In some embodiments, at least part of the low frequency band may include a part of the frequency band less than 300 Hz.
  • the part of the frequency band may be 50 Hz-100 Hz; for example, the part of the frequency band may be 100 Hz-150 Hz; for another example, the part of the frequency band may be 150 Hz-280 Hz, etc.
  • two sound outlet holes 121 are provided on the circumference of each fixing ring 123, and the two sound outlet holes 121 are respectively coupled to the acoustic cavity 122 on opposite sides of the sound-emitting unit 110.
  • the circumference of the fixing ring 123 can be understood as the four sides of the fixing ring 123.
  • the circumference of the fixing ring 123 can include a pair of long sides and a pair of short sides.
  • the sound outlet holes 121 can be relatively arranged on two sides of the fixing ring 123 (e.g., opposite long sides or opposite short sides) or adjacently arranged on two sides of the fixing ring 123 (e.g., adjacent long sides and short sides) to couple with two different acoustic cavities 122 respectively.
  • the dotted line indicates the connection surface of two adjacent fixing rings 123.
  • the first fixing ring 1231 has two sound holes on its circumference, namely, the first sound hole 1211 and the sub-sound hole 1212-1.
  • the second fixing ring 1232 has two sound holes on its circumference, namely, the sub-sound hole 1212-2 and the sub-sound hole 1213-1.
  • the sub-sound hole 1212-1 is connected to the sub-sound hole 1212-2, and can form a complete second sound hole 1212 coupled to the acoustic cavity 122.
  • the multiple fixing rings 123 can also be integrally formed.
  • the housing 120 can be regarded as including only one fixing ring 123, and the multiple sound-emitting units 110 are all arranged in one fixing ring 123.
  • the size of the sound outlet hole 121 corresponding to the first acoustic cavity 1221 and/or the second acoustic cavity 1222 is smaller than the size of the sound outlet hole 121 corresponding to the third acoustic cavity 1223.
  • the size of the sound outlet hole 121 may include but is not limited to the height of the sound outlet hole 121 along the first direction.
  • the sound pressure level output by a loudspeaker 100 (laminated loudspeaker) having n sound units 110 can be improved compared to the sound pressure level output by a loudspeaker 100 (single-layer loudspeaker) having only one sound unit 110, thereby utilizing the advantage of the small thickness of the single-layer sound unit 110 to realize a loudspeaker 100 with a smaller thickness and a large low-frequency output sound pressure level.
  • FIG3A is a schematic diagram of the structure of a fixing ring and an electrode according to some embodiments of the present specification
  • FIG3B is a cross-sectional view taken along line A-A in FIG3A .
  • the shell 120 may include a front shell 1201 and a rear shell 1202 , each fixing ring 123 is provided with at least two electrodes, and the at least two electrodes on each fixing ring 123 are respectively connected to the front shell 1201 or the rear shell 1202 through corresponding conductive electrodes.
  • the number of electrodes on each fixing ring 123 includes but is not limited to two.
  • the number of electrodes on each fixing ring 123 can also be 3.
  • the fixing ring 123 can include two electrodes, namely electrode E1 and electrode E2.
  • an excitation signal (eg, excitation voltage) may be provided to the sound generating unit 110 fixed on the fixing ring 123 .
  • the conducting electrode refers to an electrode structure connecting the corresponding electrodes on each fixing ring 123.
  • the first conducting electrode D1 can connect the electrode E1 on each fixing ring 123 to the front shell 1201 or the rear shell 1202
  • the second conducting electrode D2 can connect the electrode E2 on each fixing ring 123 to the front shell 1201 or the rear shell 1202.
  • the fixing ring 123 is a part of the housing 120, and the material of the fixing ring 123 can be consistent with the material of the housing 120.
  • the fixing ring 123 can include one or more of FR4, FPC, and plastic.
  • the fixing ring 123 is provided with at least two conducting holes extending along the first direction, and at least two electrodes are respectively provided in the corresponding conducting holes.
  • the electrodes corresponding to any two adjacent fixing rings 123 can be mutually conductive to form conductive electrodes.
  • Mutual conductive means that the electrodes are electrically connected to each other.
  • the fixing ring 123 when the fixing ring 123 is made of FR4 or FPC, the conduction between the two end faces of the fixing ring 123 can be achieved directly through the conducting hole, and then at least two electrodes on each fixing ring 123 can be conducted to form corresponding conducting electrodes by coating with conductive silver paste, conductive glue, patch, etc.
  • the fixing ring 123 when the fixing ring 123 is made of resin polymer material such as plastic, a metal electrode can be arranged in the conducting hole to achieve mutual conduction between the electrodes corresponding to any two connected fixing rings 123 to form conducting electrodes.
  • Fig. 4A is a schematic diagram of the structure of a sound unit according to some embodiments of the present specification.
  • the sound unit 110 shown in Fig. 4A may be the sound unit 110 included in the speaker 100 in any embodiment of the present specification.
  • the sound unit 110 includes a diaphragm 111 and a driving structure 112, and the driving structure 112 is disposed on the diaphragm 111.
  • the driving structure 112 includes a piezoelectric driving structure (e.g., the piezoelectric driving structure 1125 shown in FIG10 ). Due to the inverse piezoelectric effect of piezoelectricity, when an electrical signal (audio signal) acts on the piezoelectric driving structure, the piezoelectric driving structure will generate mechanical vibrations.
  • the circumferential side of the diaphragm 111 is connected to the inner wall of the fixing ring 123 located in the acoustic cavity 122, and covers the internal area of the fixing ring 123 to separate the internal area of the fixing ring 123 into two adjacent acoustic cavities 122 located on opposite sides of the diaphragm 111, namely, a front cavity and a rear cavity.
  • the diaphragm 111 receives the piezoelectric driving structure.
  • the diaphragm 111 can push the air in the front cavity and the rear cavity to generate sound waves. Due to the non-redundant structural design between the diaphragm 111 and the driving structure 112, the diaphragm 111 directly responds to the driving structure 112 to generate vibrations.
  • the speaker 100 involved in this specification can use a larger proportion of the vibration driving force to generate sound signals, so that the output sound pressure level is improved, and the overall thickness of the speaker 100 is significantly reduced.
  • the circumference of the diaphragm 111 is embedded with the inner wall of the fixing ring 123 to achieve the connection between the diaphragm 111 and the fixing ring 123.
  • a groove is provided on the inner wall of the fixing ring 123 along its circumferential direction, and the circumference of the diaphragm 111 is embedded in the groove to achieve fixation with the fixing ring 123.
  • the driving structure 112 may be a plate-like structure. In some embodiments, the driving structure 112 may be a plate-like structure of regular or irregular shapes such as a circle, an ellipse, a square, a pentagon, a hexagon, an octagon, and other polygons. In some embodiments, the driving structure 112 may also be a sheet-like or rod-like structure. For ease of description, this specification takes the driving structure 112 as a square plate-like structure as an example for explanation. In some embodiments, as shown in FIG.
  • the driving structure 112 is arranged on the side of the diaphragm 111 located in the front cavity, and the side of the diaphragm 111 located in the front cavity is connected to the side of the driving structure 112 close to the rear cavity.
  • the driving structure 112 is arranged on the side of the diaphragm 111 located in the rear cavity, and the side of the diaphragm 111 located in the rear cavity is connected to the side of the driving structure 112 close to the front cavity.
  • the sound unit 110 may include two diaphragms 111, and the two diaphragms 111 are respectively arranged on both sides of the driving structure 112 along the first direction.
  • One of the diaphragms 111 is located in the front cavity and connected to the side of the driving structure 112 close to the front cavity; the other diaphragm 111 is located in the rear cavity and connected to the side of the driving structure 112 close to the rear cavity.
  • the driving structure 112 in order to make the driving structure 112 drive the diaphragm 111 more uniformly so that the diaphragm 111 can push the air with a larger vibration amplitude, the driving structure 112 is arranged in the middle area of the diaphragm 111.
  • the driving structure 112 while the driving structure 112 is connected to the diaphragm 111, the driving structure 112 is also connected to the fixing ring 123 to prevent the mass of the driving structure 112 from affecting the vibration state of the diaphragm 111. In some embodiments, in order to prevent the connection between the driving structure 112 and the fixing ring 123 from limiting the vibration of the diaphragm 111, so that the driving structure 112 cannot drive the diaphragm 111 to vibrate, the driving structure 112 is connected to the fixing ring 123 through the elastic structure 113.
  • the first end of the elastic structure 113 is connected to the peripheral side of the driving structure 112, and the second end of the elastic structure 113 is connected to the inner wall of the fixing ring 123.
  • the second end of the elastic structure 113 is embedded in the inner wall of the fixing ring 123 to achieve the connection between the elastic structure 113 and the fixing ring 123 .
  • the speaker 100 may have a sound unit 110.
  • FIG. 4B is a schematic diagram of the structure of a speaker having a sound unit according to some embodiments of the present specification. As shown in FIG. 4B , the speaker 100 may include a housing 120 and a sound unit 110. The sound unit 110 is disposed in a receiving cavity of the housing 120 perpendicular to the first direction. The housing 120 includes a fixing ring 123, which is a cylindrical structure extending along the first direction and is used to support and fix the sound unit 110.
  • a fixing ring 123 which is a cylindrical structure extending along the first direction and is used to support and fix the sound unit 110.
  • the housing 120 further includes a front housing 1201, which is connected to the upper end surface of the fixing ring 123 along the first direction.
  • the front housing 1201 is formed as a plate-like structure having a hole.
  • the hole is a sound outlet hole 121.
  • the housing 120 further includes a rear housing (not shown in the figure), which is connected to the lower end surface of the fixing ring 123 along the first direction.
  • the rear housing 1202 is formed as a plate-like structure having a hole.
  • the hole is another sound outlet hole 121.
  • the sound unit 110 includes a diaphragm 111 and a driving structure 112, and the diaphragm 111 divides the accommodating cavity into a front cavity (i.e., a first acoustic cavity 1221) and a rear cavity (i.e., a second acoustic cavity 1222) located on opposite sides of the diaphragm 111.
  • the diaphragm 111 vibrates in response to the deformation or displacement of the driving structure 112.
  • the vibration of the diaphragm 111 drives the air in the front cavity or the rear cavity to produce fluctuations, that is, sound waves (sound signals).
  • the sound waves can be transmitted to the outside through the sound outlet 121 set on the front shell 1201 or the rear shell 1202.
  • the diaphragm 111 is located at one side of the front cavity and connected to the side of the driving structure 112 close to the rear cavity. In this case, the diaphragm 111 can push the air in the rear cavity to generate sound waves, which are transmitted outwardly through the sound outlet holes 121 provided on the rear housing 1202. In other embodiments, the diaphragm 111 is located at one side of the rear cavity and connected to the side of the driving structure 112 close to the front cavity. In this case, the diaphragm 111 can push the air in the front cavity to generate sound waves, which are transmitted outwardly through the sound outlet holes 121 provided on the front housing 1201.
  • the sound outlet 121 on the front shell 1201 or the rear shell 1202 is dustproof by encapsulation.
  • the sound outlet 121 can be dustproof encapsulated by a damping/dustproof mesh 140.
  • a single sound unit 110 that achieves dustproof encapsulation can be used as a speaker.
  • a damping/dustproof mesh 140 can be set in the sound outlet 121 corresponding to each of the plurality of acoustic cavities 122 to achieve dustproof encapsulation.
  • dustproof encapsulation may not be performed between two adjacent sound units 110, so that the front cavity and the rear cavity between the two adjacent sound units 110 are not separated, and an acoustic cavity 122 can be formed.
  • dust-proof packaging may also be performed between two adjacent sound-emitting units 110 (for example, a damping/dust-proof mesh 140 is provided between two adjacent sound-emitting units 110 , not shown in the figure), so as to adjust the output sound pressure level of the speaker 100 and the Q value of the output frequency response.
  • FIG5 is a top view of the speaker shown in FIG4B.
  • the two opposite sides of the driving structure 112 are connected to the fixing ring 123 through the elastic structure 113, and the elastic structures 113 on both sides are symmetrical with respect to the long axis of the driving structure 112 (see the x-axis shown in FIG5).
  • the symmetrically arranged elastic structures 113 can prevent the sound unit 110 from having a flipping vibration mode.
  • the elastic structures 113 on both sides are connected to the fixing ring 123 through the elastic structure 113.
  • the structure 113 is symmetrical with respect to the short axis (see the y axis shown in FIG5 ) of the driving structure 112.
  • the long axis is the center line of the driving structure 112 along the long axis direction
  • the short axis is the center line of the driving structure 112 along the short axis direction.
  • the elastic structure 113 is in a bent shape, which can increase the effective length of the elastic structure 113 within the effective space and reduce the stiffness of the elastic structure 113, thereby reducing the impact on the overall stiffness of the diaphragm 111, which is beneficial to increasing the vibration amplitude of the diaphragm 111 and improving the acoustic output of the speaker 100.
  • FIG6 is a schematic diagram of the structure of the sound unit 110 according to some embodiments of the present specification.
  • the sound unit 110 shown in FIG6 is similar to the sound unit 110 shown in FIG4A, and the main difference is that: a lead 114 (i.e., an electrode) is provided on the diaphragm 111, the sound unit 110 does not include an elastic structure 113, and the opposite sides of the driving structure 112 are connected to the diaphragm 111 through the lead 114.
  • the lead 114 is directly prepared on the diaphragm 111.
  • the driving structure 112 in this embodiment is not connected to the fixing ring 123 , which can avoid the connection between the driving structure 112 and the fixing ring 123 increasing the rigidity of the diaphragm 111 , thereby avoiding reducing the vibration amplitude of the diaphragm 111 .
  • the sound unit 110 when the driving structure 112 is an electromagnetic driving structure 112 in conjunction with Figures 7 to 9.
  • the sound unit 110 may be the sound unit 110 included in the speaker 100 in any embodiment of the present specification.
  • FIG. 7 is a schematic diagram of the structure of a sound generating unit according to other embodiments of the present specification.
  • the sound-emitting unit 110 includes a diaphragm 111 and a driving structure 112.
  • the peripheral side of the diaphragm 111 is connected to the inner wall of the fixing ring 123, see FIG4A and related descriptions for details.
  • the driving structure 112 includes a planar coil 1121 and a magnetic circuit assembly, wherein the planar coil 1121 is arranged on the diaphragm 111, and the magnetic circuit assembly includes a magnet 1122, a magnetic conductive plate 1123 and a magnetic conductive ring 1124.
  • the magnetic conductive ring 1124 is arranged around the planar coil 1121 in a plane perpendicular to the first direction, the magnet 1122 is arranged on the side of the diaphragm 111 away from the planar coil 1121, the magnet 1122 is spaced apart from the diaphragm 111 in the first direction, and the magnetic conductive plate 1123 is supported and connected to the lower surface of the magnet 1122 along the first direction.
  • the planar coil 1121 When an audio signal acts on the planar coil 1121 , the planar coil 1121 generates electromagnetic waves, which cut through the electromagnetic field of the magnetic circuit component, thereby generating a driving force, which drives the diaphragm 111 to vibrate.
  • the outer wall of the magnetic conductive ring 1124 extending along the first direction is connected and fixed to the inner wall of the fixed ring 123.
  • the peripheral side of the magnetic conductive plate 1123 is connected and fixed to the inner wall of the fixed ring 123.
  • the "connection" described in this specification can be understood as the connection between different parts of the same structure, or after preparing different parts or structures respectively, each independent part or structure is fixedly connected by welding, riveting, clamping, bolting, adhesive bonding, etc., or during the preparation process, the first part or structure is deposited on the second part or structure by physical deposition (for example, physical vapor deposition) or chemical deposition (for example, chemical vapor deposition).
  • the diaphragm 111 separates the cavity inside the fixed ring 123, and the diaphragm 111 forms a front cavity (i.e., the first acoustic cavity 1221) above the first direction, and a rear cavity (i.e., the second acoustic cavity 1222) is formed between the diaphragm 111 and the magnetic conductive plate 1123.
  • a front cavity i.e., the first acoustic cavity 1221
  • a rear cavity i.e., the second acoustic cavity 1222
  • the magnetic plate 1123 is provided with a sound outlet 121 for transmitting the sound waves generated in the rear cavity to the outside.
  • the driving structure 112 may not include the magnetic plate 1123, and a circle of magnetic conductive material is provided around the magnet 1122 to form a magnetic conductive ring.
  • the magnet 1122 is connected and fixed to the inner wall of the fixing ring 123 through the magnetic conductive ring, which can reduce the thickness of the sound unit 110, thereby reducing the thickness of the speaker 100.
  • the magnet 1122 and the planar coil 1121 are arranged in parallel or approximately in parallel, that is, the diaphragm 111, the magnet 1122 and the planar coil 1121 are arranged in parallel or approximately in parallel.
  • the planar coil 1121 is arranged in the middle area of the diaphragm 111, and the magnet 1122 is arranged close to the middle area of the diaphragm 111 in a plane perpendicular to the first direction.
  • the material of the planar coil 1121 may include materials such as copper, gold, aluminum, titanium, platinum, or a composite material thereof.
  • the magnet 1122 may include a permanent magnet (e.g., aluminum iron boron) and/or an electromagnet.
  • the material of the magnetic ring 1124 or the magnetic plate 1123 may be a magnetic material. Exemplary magnetic materials may include, but are not limited to, silicon steel, manganese zinc ferrite, nickel zinc ferrite, iron, etc.
  • the material of the fixing ring 123 may be a semiconductor material.
  • the sound unit 110 can be prepared by a semiconductor process.
  • a diaphragm layer corresponding to the diaphragm 111 is prepared on a silicon wafer, and then a planar coil 1121 layer is formed by deposition, sputtering or evaporation on the diaphragm layer, and then the desired planar coil 1121 shape is formed by photolithography.
  • the planar coil 1121 is located on the upper surface of the diaphragm 111.
  • a planar coil 1121 layer is formed by deposition, sputtering or evaporation, photolithography and etching on a silicon wafer, and then spin coating, sputtering, and evaporation are used for preparation, and the desired diaphragm layer shape is formed by photolithography and etching. At this time, the planar coil 1121 is located on the lower surface of the diaphragm 111.
  • the fixing ring 123 is made of silicon material and is obtained by back cavity etching of a silicon wafer.
  • the sound unit 110 can be prepared by a conventional process.
  • the diaphragm 111 can directly adopt a film of materials such as polyimide (PI) and polyetheretherketone (PEEK), or can adopt polyimide (PI), polyetheretherketone (PEEK) and other materials to form a film by spin coating and curing; and the planar coil 1121 can be prepared on the diaphragm 111 through a printing process.
  • materials such as polyimide (PI) and polyetheretherketone (PEEK)
  • PI polyetheretherketone
  • PEEK polyetheretherketone
  • the thickness of the speaker 100 can be reduced by adopting the planar coil 1121 and other related structural designs.
  • FIG8 is a schematic diagram of the structure of a sound unit 110 according to some embodiments of the present specification.
  • the sound unit 110 shown in FIG8 is similar to the sound unit 110 shown in FIG7 , and the main difference is that the diaphragm 111 is provided with two opposite sides of the first direction.
  • a front cavity i.e., the first acoustic cavity 1221
  • a rear cavity i.e., the second acoustic cavity 1222
  • the planar coil 1121 When the audio signal acts on the planar coil 1121, the planar coil 1121 generates electromagnetic waves, and the electromagnetic fields of the first magnet 11221 and the second magnet 11222 are cut, thereby generating a driving force, which drives the diaphragm 111 to vibrate.
  • the diaphragm 111 vibrates, it pushes the air in the front cavity and the rear cavity to fluctuate, thereby generating sound waves.
  • a circle of magnetic conductive material is disposed around the first magnet 11221 and the second magnet 11222 to form a magnetic conductive circle, and the first magnet 11221 and the second magnet 11222 are connected and fixed to the inner wall of the fixing ring 123 through the magnetic conductive circle, which can reduce the thickness of the sound unit 110, thereby reducing the thickness of the speaker 100.
  • the first magnet 11221 and the second magnet 11222 are both provided with sound outlet holes 121 for transmitting the sound waves generated in the front cavity and the rear cavity to the outside.
  • magnets 1122 are provided on opposite sides of the diaphragm 111 in the first direction, so that the magnetic field strength in the area where the planar coil 1121 is located can be increased, thereby increasing the driving force applied to the diaphragm 111 and improving the vibration amplitude of the diaphragm 111.
  • FIG9 is a schematic diagram of the structure of the sound unit 110 shown in some other embodiments of the present specification.
  • the sound unit 110 shown in FIG9 is similar to the sound unit 110 shown in FIG8, and the main difference is that the diaphragm 111 is provided with a first magnet 11221 and a second magnet 11222 on opposite sides in the first direction, respectively, wherein the first magnet 11221 and the second magnet 11222 are both separate magnets.
  • the separate magnet is a magnet 1122 distributed in a certain shape, and the separate magnet has a hollow area and a magnet area.
  • the planar coil 1121 is distributed in a ring shape, and the distribution shape of the separate magnet corresponds to the distribution shape of the planar coil 1121.
  • the projection of the magnet area of the separate magnet 1122 along the first direction at least partially overlaps with the projection of the planar coil 1121 along the first direction.
  • a separate magnet is provided, and a magnetic region is provided corresponding to each ring on the planar coil 1121.
  • Each magnetic region corresponding to each ring of the planar coil 1121 can be magnetized separately as required, so as to achieve separate regulation of the magnetic pole direction and magnetic field strength at each ring of the planar coil 1121.
  • the magnetic field strength at the middle ring of the planar coil 1121 can be maximized through regulation to increase the vibration amplitude of the diaphragm 111.
  • the driving structure 112 may include a piezoelectric driving structure (e.g., the piezoelectric driving structure 1125 shown in FIG. 10 ), and the piezoelectric driving structure includes a piezoelectric material.
  • the Young's modulus of the piezoelectric material is 30 GPa-100 GPa to ensure that the rigidity of the driving structure 112 does not excessively restrict the vibration of the diaphragm 111.
  • the Young's modulus of the piezoelectric material is 40 GPa-90 GPa. More preferably, the Young's modulus of the piezoelectric material is 50 GPa-80 GPa.
  • FIG. 10 is a cross-sectional view of a piezoelectric driving structure according to some embodiments of the present specification.
  • the piezoelectric driving structure 1125 includes, from top to bottom along the first direction, a first electrode layer 11251, a first piezoelectric layer 11252, a second electrode layer 11253, a second piezoelectric layer 11254, and a third electrode layer 11255.
  • the first electrode layer 11251, the first piezoelectric layer 11252, the second electrode layer 11253, the second piezoelectric layer 11254, the third electrode layer 11255, and the diaphragm 111 are sequentially connected through their adjacent sides.
  • the material of the piezoelectric layer may include, but is not limited to, lead zirconate titanate (PZT) or zinc oxide (ZnO) or aluminum nitride (AlN) and combinations thereof.
  • the material of the electrode layer may include, but is not limited to, platinum (Pt), gold (Au) or titanium (Ti) and any combination thereof.
  • the material of the diaphragm 111 may be a flexible polymer material.
  • Exemplary flexible polymer materials include, but are not limited to, one or more of polyimide (PI), polyethylene terephthalate (PET), polyethyleneimine (PEI), polyetheretherketone (PEEK), silicone, polycarbonate (PC), vinyl polymer (PVC), acrylonitrile-butadiene-styrene copolymer (ABS), polyethylene (PE), polyparaxylene (PPX), etc., and may also be a multilayer composite material formed by the above materials.
  • PI polyimide
  • PET polyethylene terephthalate
  • PEI polyethyleneimine
  • PEEK polyetheretherketone
  • silicone silicone
  • PC polycarbonate
  • PVC vinyl polymer
  • ABS acrylonitrile-butadiene-styrene copolymer
  • PE polyethylene
  • PPX polyparaxylene
  • the Young's modulus of the flexible polymer material ranges from 1 GPa to 9 GPa (e.g., 2 GPa to 8 GPa, 3 GPa to 7 GPa, or 4 GPa to 6 GPa, etc.).
  • the material of the diaphragm 111 may be a semiconductor material. Exemplary semiconductor materials include, but are not limited to, one or more of silicon (Si), silicon dioxide (SiO 2 ), silicon nitride (Si x N y ), etc., and may also be a multilayer composite material formed by combining the above materials.
  • the Young's modulus of the semiconductor material ranges from 100 GPa to 200 GPa (e.g., 120 GPa to 190 GPa, 130 GPa to 180 GPa, or 140 GPa to 170 GPa, etc.).
  • the thickness of the electrode layer may range from 80nm to 200nm (e.g., 100nm to 180nm, 120nm to 160nm, or 130nm to 150nm, etc.). In some embodiments, when the piezoelectric layer is prepared by a magnetron sputtering process or a sol-gel or other MEMS process, the thickness of the piezoelectric layer ranges from 1um to 3um (e.g., 1.5nm to 2.5nm, 1.6nm to 2.8nm, or 1.8nm to 2.6nm, etc.).
  • the thickness of the piezoelectric layer ranges from 20um to 100um (e.g., 20nm to 80nm, 30nm to 60nm, or 30nm to 50nm, etc.).
  • the piezoelectric drive structure 1125 has a d33 mode and a d31 mode.
  • a voltage is applied to each electrode layer along the first direction, and the piezoelectric layer will produce telescopic deformation along the first direction and along the second direction (see the x direction shown in FIG. 11A) (as shown in FIG. 11B). If only the d33 mode in the first direction is relied on, the deformation of the piezoelectric drive structure 1125 is extremely small, and the sound pressure level output by the sound unit 110 cannot meet the actual demand.
  • the d31 mode in a direction perpendicular to the first direction can be used.
  • Fig. 11A is a schematic diagram of the structure of the piezoelectric drive structure before deformation according to some embodiments of the present specification.
  • Fig. 11B is a schematic diagram of the structure of the piezoelectric drive structure after deformation according to some embodiments of the present specification.
  • the piezoelectric drive structure 1125 includes a sintered piezoelectric ceramic.
  • the sintered piezoelectric ceramic is a piezoelectric ceramic layer (i.e., a piezoelectric layer) prepared by a sintering process.
  • the thickness of the piezoelectric ceramic layer is limited by the process, and its thickness is greater than 15um. Therefore, the thickness of the piezoelectric ceramic layer is preferably higher than the thickness of the diaphragm 111 (as shown in FIG. 11A ).
  • the neutral layer 11256 is located inside the piezoelectric drive structure 1125 (as shown in FIG. 11B ).
  • the neutral layer 11256 when the neutral layer 11256 is located inside the piezoelectric driving structure 1125, in order to ensure that the piezoelectric driving structure 1125 can have a larger displacement in the first direction so that the amplitude of the diaphragm 111 is larger, it can be achieved by designing the polarization direction of each piezoelectric layer and the positive and negative applied voltage so that the deformation directions of the materials on both sides of the neutral layer 11256 along the first direction are opposite.
  • FIG. 12A is a schematic diagram of the polarization directions of each piezoelectric layer of a piezoelectric driving structure according to some embodiments of the present specification.
  • the electric potential directions of the first piezoelectric layer 11252 and the second piezoelectric layer 11254 may be opposite.
  • the first voltage of the first electrode layer 11251 and the third voltage of the third electrode layer 11255 may both be greater than the second voltage of the second electrode layer 11253, and the first voltage of the first electrode layer 11251 and the third voltage of the third electrode layer 11255 may both be less than the second voltage of the second electrode layer 11253.
  • the first voltage is equal to the third voltage
  • the second voltage is 0V.
  • the potential direction of the first piezoelectric layer 11252 is downward along the first direction, which is opposite to the polarization direction, and the first piezoelectric layer 11252 is compressed; the potential direction of the second piezoelectric layer 11254 is upward along the first direction, which is the same as the polarization direction, and the second piezoelectric layer 11254 is stretched. Since the neutral layer 11256 is located in the piezoelectric drive structure 1125, the piezoelectric drive structure 1125 is bent and deformed downward as a whole. At this time, the sound unit 110 is bent and deformed downward as a whole, and the diaphragm 111 is stretched.
  • the potential direction of the first piezoelectric layer 11252 is upward along the first direction, which is the same as the polarization direction, and the first piezoelectric layer 11252 is stretched; the potential direction of the second piezoelectric layer 11254 is downward along the first direction, which is opposite to the polarization direction, and the second piezoelectric layer 11254 is compressed. Since the neutral layer 11256 is located in the piezoelectric driving structure 1125, the piezoelectric driving structure 1125 is bent and deformed upward as a whole. At this time, the sound unit 110 is bent and deformed upward as a whole, and the diaphragm 111 is compressed.
  • FIG. 12B is a schematic diagram of the polarization directions of each piezoelectric layer of a piezoelectric driving structure according to some embodiments of the present specification.
  • the electric potential directions of the first piezoelectric layer 11252 and the second piezoelectric layer 11254 can be the same.
  • the first voltage, the second voltage, and the third voltage can decrease or increase in sequence.
  • the electric potential direction of the first piezoelectric layer 11252 is downward along the first direction, which is opposite to the polarization direction, and the first piezoelectric layer 11252 is compressed; the electric potential direction of the second piezoelectric layer 11254 is downward along the first direction, which is the same as the polarization direction, and the second piezoelectric layer 11254 is stretched. Since the neutral layer 11256 is located in the piezoelectric drive structure 1125, the piezoelectric drive structure 1125 is bent and deformed downward as a whole. At this time, the sound unit 110 is bent and deformed downward as a whole, and the diaphragm 111 is stretched.
  • the electric potential direction of the first piezoelectric layer 11252 is upward along the first direction, which is the same as the polarization direction, and the first piezoelectric layer 11252 is stretched; the electric potential direction of the second piezoelectric layer 11254 is upward along the first direction, which is opposite to the polarization direction, and the second piezoelectric layer 11254 is compressed. Since the neutral layer 11256 is located in the piezoelectric driving structure 1125, the piezoelectric driving structure 1125 is bent and deformed upward as a whole. At this time, the sound unit 110 is bent and deformed upward as a whole, and the diaphragm 111 is compressed.
  • Fig. 13A is a schematic diagram of the structure of the piezoelectric drive structure before deformation according to some embodiments of the present specification.
  • Fig. 13B is a schematic diagram of the structure of the piezoelectric drive structure after deformation according to some embodiments of the present specification.
  • the piezoelectric drive structure 1125 includes a MEMS piezoelectric ceramic.
  • the MEMS piezoelectric ceramic is a piezoelectric ceramic layer (i.e., a piezoelectric layer) prepared using a MEMS process.
  • the thickness of the piezoelectric ceramic layer here is relatively small, so the thickness of the piezoelectric ceramic layer is preferably less than the thickness of the diaphragm 111, as shown in FIG. 13A, at which time the neutral layer 11256 is located outside the piezoelectric drive structure 1125, i.e., inside the diaphragm 111.
  • the neutral layer 11256 when the neutral layer 11256 is located outside the piezoelectric drive structure 1125 and inside the diaphragm 111, in order to ensure that the piezoelectric drive structure 1125 can have a larger displacement in the first direction so that the amplitude of the diaphragm 111 is larger, it can be achieved by designing the polarization direction of each piezoelectric layer and the positive and negative applied voltage, so that the deformation directions of the materials of the piezoelectric drive structure 1125 located on one side of the neutral layer 11256 along the first direction are the same, and the deformation directions of the materials located on both sides of the neutral layer 11256 along the first direction are opposite.
  • Figure 14A is a schematic diagram of the polarization direction of each piezoelectric layer of a piezoelectric drive structure according to some embodiments of this specification.
  • Figure 14B is a schematic diagram of the polarization direction of each piezoelectric layer of a piezoelectric drive structure according to some embodiments of this specification.
  • the electric potential directions of the first piezoelectric layer 11252 and the second piezoelectric layer 11254 are opposite.
  • the first voltage of the first electrode layer 11251 and the third electrode layer 11255 The third voltage of the first electrode layer 11251 and the third voltage of the third electrode layer 11255 may both be greater than the second voltage of the second electrode layer 11253 , and the first voltage of the first electrode layer 11251 and the third voltage of the third electrode layer 11255 may both be less than the second voltage of the second electrode layer 11253 .
  • the potential direction of the first piezoelectric layer 11252 is upward along the first direction, which is the same as the polarization direction, and the first piezoelectric layer 11252 is stretched; the potential direction of the second piezoelectric layer 11254 is downward along the first direction, which is the same as the polarization direction, and the second piezoelectric layer 11254 is stretched. Since the neutral layer 11256 is located outside the piezoelectric driving structure 1125 and inside the diaphragm 111, the piezoelectric driving structure 1125 is stretched as a whole, the diaphragm 111 is compressed, and the sound unit 110 is bent and deformed upward as a whole.
  • the potential direction of the first piezoelectric layer 11252 is upward along the first direction, which is opposite to the polarization direction, and the first piezoelectric layer 11252 is compressed; the potential direction of the second piezoelectric layer 11254 is downward along the first direction, which is opposite to the polarization direction, and the second piezoelectric layer 11254 is compressed. Since the neutral layer 11256 is located outside the piezoelectric driving structure 1125 and inside the diaphragm 111, the piezoelectric driving structure 1125 is compressed as a whole, the diaphragm 111 is stretched, and the sound unit 110 is bent and deformed downward as a whole.
  • Figure 14C is a schematic diagram of the polarization direction of each piezoelectric layer of a piezoelectric drive structure according to some embodiments of this specification.
  • Figure 14D is a schematic diagram of the polarization direction of each piezoelectric layer of a piezoelectric drive structure according to some embodiments of this specification.
  • the electric potential direction of the first piezoelectric layer 11252 and the second piezoelectric layer 11254 is the same.
  • the first voltage, the second voltage, and the third voltage may decrease in sequence or may increase in sequence.
  • the electric potential direction of the first piezoelectric layer 11252 is upward along the first direction, which is the same as the polarization direction, and the first piezoelectric layer 11252 is stretched; the electric potential direction of the second piezoelectric layer 11254 is upward along the first direction, which is the same as the polarization direction, and the second piezoelectric layer 11254 is stretched. Since the neutral layer 11256 is located outside the piezoelectric driving structure 1125 and inside the diaphragm 111, the piezoelectric driving structure 1125 is stretched as a whole, the diaphragm 111 is compressed, and the sound unit 110 is bent and deformed upward as a whole.
  • the electric potential direction of the first piezoelectric layer 11252 is upward along the first direction, which is opposite to the polarization direction, and the first piezoelectric layer 11252 is compressed; the electric potential direction of the second piezoelectric layer 11254 is upward along the first direction, which is opposite to the polarization direction, and the second piezoelectric layer 11254 is compressed. Since the neutral layer 11256 is located outside the piezoelectric driving structure 1125 and inside the diaphragm 111, the piezoelectric driving structure 1125 is compressed as a whole, the diaphragm 111 is stretched, and the sound unit 110 is bent and deformed downward as a whole.
  • the absolute value of the first driving voltage and the absolute value of the second driving voltage are not higher than 5 V.
  • the first driving voltage of the first piezoelectric layer 11252 is the difference between the first voltage and the second voltage
  • the second driving voltage of the second piezoelectric layer 11254 is the difference between the second voltage and the third voltage.
  • the suspended area on the diaphragm 111 refers to the area where the diaphragm 111 is suspended in the acoustic cavity 122.
  • the suspended area is the surface area of the diaphragm 111 minus the area where the diaphragm 111 contacts the fixing ring 123.
  • the suspended area includes a piezoelectric covering area and a non-piezoelectric covering area.
  • the piezoelectric covering area refers to the surface area of the diaphragm 111 where the piezoelectric driving structure 1125 is projected onto the diaphragm 111 along the first direction.
  • the non-piezoelectric covering area is the surface area of the diaphragm 111 outside the piezoelectric covering area.
  • the surface area of the diaphragm 111 is the surface area of the diaphragm 111 perpendicular to the first direction.
  • the diaphragm 111 since the thickness of the sintered piezoelectric ceramic diaphragm 111 is smaller than the thickness of the piezoelectric layer, the diaphragm 111 has little effect on the resonant frequency and output sound pressure level of the speaker 100 , and the output sound pressure level of the speaker 100 is mainly affected by the size of the piezoelectric driving structure 1125 .
  • the parameter ⁇ is defined as the ratio of the piezoelectric covering area Sq to the suspended area Sp of the diaphragm 111 , wherein the piezoelectric covering area is the area of the piezoelectric covering area of the diaphragm 111 , and the suspended area of the diaphragm 111 is the area of the suspended area of the diaphragm 111 .
  • FIG. 15 is a frequency response curve diagram of a loudspeaker corresponding to different values of ⁇ according to some embodiments of this specification.
  • the value range of ⁇ is ⁇ 0.4.
  • the value range of ⁇ is ⁇ 0.61.
  • FIG. 16 is a schematic diagram of a quarter structure of a piezoelectric drive structure according to some embodiments of the present specification.
  • the piezoelectric driving structure 1125 can be a multi-piece separated structure.
  • the first piece of the piezoelectric driving structure 1125 is located in the central area of the diaphragm 111, and the second piece of the piezoelectric driving structure 1125 is arranged around the first piece.
  • the piezoelectric covering area 1125a on the diaphragm 111 can be divided into two parts: a second piezoelectric covering area located in the central area of the diaphragm 111 and surrounding the first piezoelectric covering area, and the second piezoelectric covering area is annular.
  • the remaining area of the surface area of the diaphragm 111 except the piezoelectric covering area 1125a is the non-piezoelectric covering area 1125b.
  • the diaphragm 111 of the piezoelectric ceramic prepared by the MEMS process since the thickness of the diaphragm 111 of the piezoelectric ceramic prepared by the MEMS process is greater than the thickness of the piezoelectric layer, the diaphragm 111 has a significant effect on the resonant frequency and output sound pressure level of the speaker 100.
  • the compliance of the diaphragm 111 mainly comes from the non-piezoelectric covering area 1125b. When the area of the non-piezoelectric covering area 1125b is small, the compliance of the non-piezoelectric covering area 1125b is too small, and the resonant frequency of the speaker 100 is high. When the area of the non-piezoelectric covering area 1125b is large, the compliance of the non-piezoelectric covering area 1125b is too large, and local high-order modes are generated in a lower frequency range, affecting the output of the speaker 100.
  • the parameter ⁇ is defined as the ratio of the area Sd of the non-piezoelectric covering region to the suspended area Sp of the diaphragm 111.
  • the area of the non-piezoelectric covering region shown in FIG16 is the sum of the areas of the first piezoelectric covering region and the second piezoelectric covering region.
  • ⁇ When ⁇ is large, the area of the non-piezoelectric covering region is large, the compliance of the non-piezoelectric covering region is too large, and local high-order modes are generated at lower frequencies, resulting in reduced output of the speaker 100.
  • ⁇ When ⁇ is small, the area of the non-piezoelectric covering region is small, the compliance of the non-piezoelectric covering region is reduced, the resonant frequency is increased, and the output sound pressure level in the frequency band after the resonant frequency will also increase.
  • FIG. 17 is a frequency response curve diagram of a speaker corresponding to different values of ⁇ according to some embodiments of this specification.
  • the value range of ⁇ is ⁇ 0.65.
  • the value range of ⁇ is ⁇ 0.36.
  • the speaker 100 may further include a mass block 130 , and the mass block 130 is used to adjust the mass and stiffness of the diaphragm 111 , so that the output sound pressure level of the speaker 100 is improved.
  • the diaphragm 111 or the driving structure 112 has a long axis direction and a short axis direction, wherein the long axis direction refers to the direction extending along the long axis (see the x-axis shown in FIG5 ), and the short axis direction refers to the direction extending along the short axis (see the y-axis shown in FIG5 ).
  • the mass block 130 may be arranged along the long axis direction, and in the long axis direction, the size of the mass block 130 is equal to or smaller than the size of the piezoelectric driving structure 1125. In some embodiments, the ratio of the size of the mass block 130 along the long axis direction (referred to as the long axis size) to the long axis size of the piezoelectric driving structure 1125 is less than or equal to 1. In some embodiments, the mass block 130 may be arranged along the short axis direction, and in the short axis direction, the size of the mass block 130 is equal to or smaller than the size of the piezoelectric driving structure 1125. In some embodiments, the ratio of the size of the mass block 130 along the short axis direction (referred to as the short axis size) to the short axis size of the piezoelectric driving structure 1125 is less than or equal to 1.
  • FIG. 18 is a schematic diagram of the arrangement of the mass block shown in some embodiments of the specification.
  • the mass block 130 is disposed on the sound generating unit 110 and disposed along the long axis direction. In some embodiments, the mass block 130 is disposed on the piezoelectric driving structure 1125. In some embodiments, the mass block 130 is located at or approximately at the short axis of the piezoelectric driving structure 1125.
  • FIG19A is a deformation cloud diagram of a diaphragm without a mass block.
  • the non-piezoelectric covering area of the diaphragm 111 close to the housing 120 in the long axis direction will produce a local concave deformation, which is opposite to the deformation direction of other areas of the diaphragm 111, thereby reducing the overall volume of air pushed by the diaphragm 111, and further reducing the output sound pressure level of the speaker 100.
  • Fig. 19B is a deformation cloud diagram of the diaphragm with a mass block. As shown in Fig. 19B, by arranging the mass block 130 along the long axis direction, the non-piezoelectric covering area of the diaphragm 111 close to the housing 120 in the long axis direction can be moved together, and the deformation of other parts of the diaphragm 111 is consistent.
  • FIG. 20 is a schematic diagram of the arrangement of the mass block shown in some embodiments of the specification.
  • the mass block 130 is disposed on the sound generating unit 110 and is disposed along the short axis direction. In some embodiments, the mass block 130 is disposed on the piezoelectric drive structure 1125. In some embodiments, the mass block 130 is located at or approximately at the piezoelectric drive structure 1125 at the long axis.
  • FIG21A is a deformation cloud diagram of a diaphragm without a mass block.
  • the non-piezoelectric covering area of the diaphragm 111 close to the housing 120 in the long axis direction will produce a local concave deformation, which is opposite to the deformation direction of other areas of the diaphragm 111, thereby reducing the overall volume of air pushed by the diaphragm 111, and further reducing the output sound pressure level of the speaker 100.
  • FIG21B is a deformation cloud diagram of the diaphragm with a mass block.
  • the maximum displacement of the central part of the sound unit 110 of the speaker 100 is increased from an absolute value of 15um to 20um, and the absolute value of the displacement of the depression area of the non-piezoelectric covering area in the opposite direction to the central part is reduced from 30um to 25um, which can reduce the amount of sound cancellation caused by the displacement of the depression area of the central part and the non-piezoelectric covering area in the opposite direction, thereby effectively increasing the overall amount of air pushed, thereby increasing the output sound pressure level.
  • FIG. 22 is a schematic diagram of the arrangement of the mass block shown in some embodiments of the specification.
  • the mass block 130 is disposed on the sound unit 110, and the mass block 130 has certain dimensions in both the long axis direction and the short axis direction, so that the mass block 130 is disposed along the long axis and along the short axis direction.
  • the mass block 130 is disposed on the piezoelectric drive structure 1125. In some embodiments, the mass block 130 is located at or approximately located in the middle area of the piezoelectric drive structure 1125.
  • the long axis dimension of the mass block 130 is equal to or smaller than the long axis dimension of the piezoelectric drive structure 1125, and the short axis dimension of the mass block 130 is equal to or smaller than the short axis dimension of the piezoelectric drive structure 1125.
  • FIG23A is a deformation cloud diagram of a diaphragm without a mass block.
  • the non-piezoelectric covering area of the diaphragm 111 close to the housing 120 in the long axis direction will produce a local concave deformation, which is opposite to the deformation direction of other areas of the diaphragm 111, thereby reducing the overall volume of air pushed by the diaphragm 111, and further reducing the output sound pressure level of the speaker 100.
  • FIG23B is a deformation cloud diagram of the diaphragm with a mass block.
  • the mass block 130 along the long axis and the short axis, the non-piezoelectric covering area of the diaphragm 111 close to the housing 120 in the long axis direction can be moved together, and the deformation of other parts of the diaphragm 111 is consistent, and the maximum displacement of the sound unit 110 of the speaker 100 is increased, which can effectively increase the overall pushed air volume, thereby increasing the output sound pressure level.
  • FIG24A is a schematic diagram of the structure of a laminated (10-layer) speaker according to some embodiments of the present specification
  • FIG24B is a frequency response curve diagram of a laminated speaker and a single-layer speaker according to some embodiments of the present specification.
  • Some embodiments of this specification take a stacked speaker composed of 10 (layers) of sound-emitting units 110 as an example and compare it with a single-layer speaker under the same conditions (eg, the same material, the same structural dimensions, etc.).
  • the height of the first acoustic cavity 1221 formed between the front shell 1201 and the adjacent first sound unit 1101 in the first direction is represented as hq 1
  • the height of the first sound outlet hole 1211 coupled to the first acoustic cavity 1221 in the first direction is represented as hk 1
  • the height of the third acoustic cavity 1223 formed between two adjacent sound units 110 (such as the i-1th sound unit 110i-1 and the i-th sound unit 110i) in the first direction is represented as hq i
  • the height of the i-th sound outlet hole 121i coupled to the third acoustic cavity 1223 in the first direction is represented as hk i
  • SP10 represents the output sound pressure level of the stacked (10-layer) speaker
  • SP1 represents the output sound pressure level of the single-layer speaker.
  • the output sound pressure level of the stacked speaker is about 60dB
  • the output sound pressure level of the single-layer speaker is about 40dB.
  • the output sound pressure level of the laminated speaker is not reduced due to the small height of the acoustic cavity 122 and the sound outlet hole 121 coupled to the acoustic cavity 122.
  • the height of the acoustic cavity 122 and the sound outlet hole 121 coupled to the acoustic cavity 122 in the laminated loudspeaker in the first direction is preferably hq i ⁇ 300um, hq 1 ⁇ 150um, hq n+1 ⁇ 150um, hk i ⁇ 100um, hk 1 ⁇ 50um, hk n+1 ⁇ 50um.
  • Figure 25 is an exemplary schematic diagram of an acoustic output device according to some embodiments of the present specification
  • Figure 26A is an exemplary schematic diagram 1 of an acoustic output device according to other embodiments of the present specification
  • Figure 26B is an exemplary schematic diagram 2 of an acoustic output device according to some embodiments of the present specification
  • Figure 27 is an exemplary schematic diagram of an acoustic output device according to yet other embodiments of the present specification
  • Figure 28 is a frequency response curve diagram of an acoustic output device according to some embodiments of the present specification.
  • this specification provides an acoustic output device, including: a low-frequency unit and a high-frequency unit, wherein the low-frequency unit includes the speaker 100 described in FIG. 1A-FIG 24B and related contents.
  • the acoustic output device 200 may include a back-hook headset, an ear-hook headset, an in-ear headset, a headset in glasses, or a headset in the middle of a pair of glasses. One or more of.
  • the acoustic output device 200 may include at least one low frequency unit and at least one high frequency unit. As shown in FIG25 , for an open binaural headset, a low frequency unit and a high frequency unit may be provided on each of the two headsets.
  • two low-frequency units and one high-frequency unit may be provided on each of the two temples to enhance the output sound pressure level at low frequencies.
  • SP d is a low frequency unit
  • SP q is a high frequency unit
  • SP h is an acoustic output device 200 after frequency division
  • a dotted line represents a frequency division line L (i.e., a straight line where the frequency corresponding to the intersection of the frequency response curves of SP d and SP q is located).
  • the intersection of the frequency response curves of the low frequency unit and the high frequency unit is within the range of 300 Hz-1000 Hz, i.e., the frequency division line L is within the range of 300 Hz-1000 Hz.
  • the low frequency unit refers to a structural unit capable of achieving good sound pressure level output in the low frequency band in the acoustic output device 200.
  • the low frequency unit includes but is not limited to an air-conducting piezoelectric stacked speaker (eg, speaker 100).
  • the low frequency unit can operate within a first frequency range with the frequency division line L as the upper boundary. That is, the upper boundary of the first frequency range is within the range of 300 Hz-1000 Hz. In some embodiments, the upper boundary of the first frequency range can also be within other suitable ranges. For example, the upper boundary of the first frequency range is within 300 Hz-1500 Hz, etc. In some embodiments, the first frequency range can be referred to as a low frequency band.
  • the piezoelectric stack loudspeaker (such as the loudspeaker 100 ) can output a larger sound pressure level in the low frequency band, in order to better achieve a fuller low-frequency effect, the piezoelectric stack loudspeaker (such as the loudspeaker 100 ) can be used in the low frequency band.
  • the high frequency unit refers to a structural unit that can achieve a good sound pressure level output in the high frequency band in the acoustic output device 200.
  • the high frequency unit may include an air conduction speaker and/or a bone conduction speaker.
  • the high frequency unit can operate at least within a second frequency range with the frequency division line L as the lower boundary.
  • the second frequency range can be referred to as a high frequency band.
  • the acoustic output device 200 can use a method of combining a bone conduction speaker with an air-conducted piezoelectric stack speaker (such as speaker 100) so that the bone conduction speaker is responsible for the high frequency band, while the air-conducted piezoelectric stack speaker (such as speaker 100) is responsible for the low frequency band.
  • the bone conduction speaker in addition to working in the high frequency band, can also work in the low frequency band to further enhance the low frequency effect.
  • the output of the air-conducted piezoelectric stack speaker (such as speaker 100) is dominant.
  • the high frequency unit of the acoustic output device 200 may also be an air conduction speaker.
  • the acoustic output device may adopt a frequency division design or not, that is, the air conduction speaker (high frequency unit) may work only in the high frequency band (second frequency range) or in both the low frequency band and the high frequency band.
  • the outputs of the air conduction speaker and the air conduction piezoelectric stack speaker (such as the speaker 100) are superimposed in the low frequency band to further enhance the low frequency effect.
  • the acoustic output device 200 has a height direction parallel to the first direction and a thickness direction perpendicular to the first direction.
  • the low-frequency unit and the high-frequency unit are arranged in parallel in the height direction, and the low-frequency unit is located below the high-frequency unit; or the low-frequency unit and the high-frequency unit are arranged in parallel in the thickness direction, and the high-frequency unit is arranged on the side of the acoustic output device 200 close to the user.
  • the height direction parallel to the first direction can be understood as a direction parallel to the front end surface of the acoustic output device 200 close to the user; the thickness direction perpendicular to the first direction can be understood as a direction perpendicular to the front end surface of the acoustic output device 200 close to the user.
  • the high-frequency unit by disposing the high-frequency unit on the side of the acoustic output device 200 close to the user, when the high-frequency unit adopts a bone conduction speaker 100, it can be more conducive to the transmission of sound to improve the user experience.
  • the high-frequency unit is acoustically coupled with the first hole portion 201 provided in the acoustic output device 200
  • the low-frequency unit is acoustically coupled with the second hole portion 202 provided in the acoustic output device 200
  • both the first hole portion 201 and the second hole portion 202 are arranged toward the user so that the sound can be better output to the user.
  • the first hole portion 201 and the second hole portion 202 are the same hole or different holes.
  • the high frequency unit of the acoustic output device 200 adopts a bone conduction speaker 100SP g , it is not necessary to provide the first hole portion 201 for acoustically coupling with the high frequency unit.
  • the first hole 201 and the second hole 202 are the same hole, which can be understood as the first hole 201 and the second hole 202 are the holes for sound emission shared by the high-frequency unit and the low-frequency unit; the first hole 201 and the second hole 202 are different holes, which can be understood as the first hole 201 and the second hole 202 are independently set holes for sound emission.
  • the acoustic output device 200 may include multiple holes for emitting sound.
  • the acoustic output device 200 may include a first hole 201 acoustically coupled to the high-frequency unit, and two second holes 202 acoustically coupled to the low-frequency unit, or two first holes 201 acoustically coupled to the high-frequency unit, and a second hole 202 acoustically coupled to the low-frequency unit (as shown in FIG.
  • the acoustic output device 200 may include a first hole 201 and a second hole 202 independently arranged to acoustically couple to the high-frequency unit and the low-frequency unit, respectively, and may also include a hole for emitting sound shared by the high-frequency unit and the low-frequency unit or the two low-frequency units, which is referred to as a third hole 203 (as shown in FIG. 26A-FIG. 26B ).
  • the beneficial effects that may be brought about by the embodiments of this specification include but are not limited to: 1) based on the adjacent and shared multiple sound-emitting units The two sound units of at least one acoustic cavity in the acoustic cavity vibrate in opposite directions in at least part of the low frequency band.
  • the sound pressure level output by the speaker with n sound units can be increased by 20 ⁇ log 10 compared with the sound pressure level output by the speaker with only one sound unit (single-layer speaker).
  • the speaker can be applied to more usage scenarios, making it widely applicable and practical; 4) By setting a mass block along the long axis or short axis direction of the sound unit on the sound unit, the mass and stiffness of the diaphragm can be adjusted, and the deformation of the diaphragm during vibration can be adjusted, thereby improving the output sound pressure level of the speaker; 5) By limiting the voltage applied to the first piezoelectric layer and the second piezoelectric layer, the speaker can be more in line with the battery power supply capacity and power consumption of common consumer electronic products such as headphones and audio glasses, making the speaker more practical.
  • numbers describing the number of components and attributes are used. It should be understood that such numbers used in the description of the embodiments are modified by the modifiers "about”, “approximately” or “substantially” in some examples. Unless otherwise specified, “about”, “approximately” or “substantially” indicate that the numbers are allowed to vary by ⁇ 20%. Accordingly, in some embodiments, the numerical parameters used in the specification and claims are approximate values, which may change according to the required features of individual embodiments. In some embodiments, the numerical parameters should take into account the specified significant digits and adopt the general method of retaining digits. Although the numerical domains and parameters used to confirm the breadth of their range in some embodiments of this specification are approximate values, in specific embodiments, the setting of such numerical values is as accurate as possible within the feasible range.

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Abstract

一种扬声器（100），包括沿第一方向间隔布置的多个发声单元（110），多个发声单元（110）均沿第一方向振动；壳体（120），被配置为容纳并支撑多个发声单元（110），壳体（120）上设置有多个出声孔（121），壳体（120）与多个发声单元（100）围成多个声学腔体（122），每个声学腔体（122）与壳体（120）上至少一个出声孔（121）声学耦合，其中，多个发声单元（100）均包括振膜（111）以及设置在振膜（111）上的驱动结构（112）。

Description

一种扬声器 技术领域
本说明书涉及声学技术领域，特别涉及一种扬声器。
背景技术
音频设备，包括开放式耳机、无线耳机、音频眼镜等，对低频范围内的声学表现要求逐渐升高。现有的电磁式扬声器为保证低频输出足够的声压级，需要较大的运动行程，导致设备的厚度尺寸较大。
因此，有必要提出一种设计尺寸较小且能提供足够的低频输出的扬声器。
发明内容
本说明书实施例之一提供一种扬声器，包括：沿第一方向间隔布置的多个发声单元，所述多个发声单元均沿所述第一方向振动；壳体，被配置为容纳并支撑所述多个发声单元，所述壳体上设置有多个出声孔，所述壳体与所述多个发声单元围成多个声学腔体，每个声学腔体与所述壳体上至少一个出声孔声学耦合，其中，所述多个发声单元均包括振膜以及设置在所述振膜上的驱动结构。
本说明书实施例之一还提供一种声学输出装置，包括：低频单元与高频单元，所述低频单元包括如上所述的扬声器，其中，所述低频单元与所述高频单元的频响曲线的交点在300Hz-1000Hz的范围内。
附图说明
本说明书将以示例性实施例的方式进一步说明，这些示例性实施例将通过附图进行详细描述。这些实施例并非限制性的，在这些实施例中，相同的编号表示相同的结构，其中：
图1A是根据本说明书一些实施例所示的扬声器的结构示意图；
图1B是图1A所示的扬声器的截面图；
图1C是图1B所示的扬声器截面的第一视图；
图2A是根据本说明书一些实施例所示的扬声器截面的结构简图；
图2B是根据本说明书一些实施例所示的振膜振动时的扬声器截面的结构简图；
图3A是根据本说明书一些实施例所示的固定环与电极的结构示意图；
图3B是图3A中A-A处的剖面图；
图4A是根据本说明书一些实施例所示的发声单元的结构示意图；
图4B是根据本说明书一些实施例所示的具有一个发声单元的扬声器的结构示意图；
图5为图4B所示的扬声器的俯视图；
图6是根据本说明书一些实施例所示的发声单元的结构示意图；
图7是根据本说明书另一些实施例所示的发声单元的结构示意图；
图8是根据本说明书又一些实施例所示的发声单元的结构示意图；
图9是根据本说明书又一些实施例所示的发声单元的结构示意图；
图10是根据本说明书一些实施例所示的压电驱动结构的截面图；
图11A是根据本说明书一些实施例所示的压电驱动结构变形前的结构示意图；
图11B是根据本说明书一些实施例所示的压电驱动结构变形后的结构示意图；
图12A是根据本说明书一些实施例所示的压电驱动结构各压电层极化方向的示意图；
图12B是根据本说明书一些实施例所示的压电驱动结构各压电层极化方向的示意图；
图13A是根据本说明书一些实施例所示的压电驱动结构变形前的结构示意图；
图13B是根据本说明书一些实施例所示的压电驱动结构变形后的结构示意图；
图14A是根据本说明书一些实施例所示的压电驱动结构各压电层极化方向的示意图；
图14B是根据本说明书一些实施例所示的压电驱动结构各压电层极化方向的示意图；
图14C是根据本说明书一些实施例所示的压电驱动结构各压电层极化方向的示意图；
图14D是根据本说明书一些实施例所示的压电驱动结构各压电层极化方向的示意图；
图15是根据本说明书一些实施例所示的是β不同取值对应的扬声器的频响曲线图；
图16是根据本说明书一些实施例所示的压电驱动结构的四分之一结构示意图；
图17是根据本说明书一些实施例所示的是α不同取值对应的扬声器的频响曲线图；
图18是说明书一些实施例所示的质量块的设置示意图；
图19A为无质量块设置的振膜的变形云图；
图19B为设置质量块的振膜的变形云图；
图20是说明书一些实施例所示的质量块的设置示意图；
图21A为无质量块设置的振膜的变形云图；
图21B为设置质量块的振膜的变形云图；
图22是说明书一些实施例所示的质量块的设置示意图；
图23A为无质量块设置的振膜的变形云图；
图23B为设置质量块的振膜的变形云图；
图24A是根据本说明书一些实施例所示的叠层(10层)扬声器的结构示意图；
图24B是根据本说明书一些实施例所示的叠层扬声器与单层扬声器的频响曲线图；
图25是根据本说明书一些实施例所示的声学输出装置的示例性示意图；
图26A是根据本说明书另一些实施例所示的声学输出装置的示例性示意图一；
图26B是根据本说明书一些实施例所示的声学输出装置的示例性示意图二；
图27是根据本说明书又一些实施例所示的声学输出装置的示例性示意图；
图28是根据本说明书一些实施例所示的声学输出装置的频响曲线图。
附图标号说明：100、扬声器；110、发声单元；1101、第一发声单元；1102、第二发声单元；1103、第三发声单元；1104、第四发声单元；110n、第n发声单元；111、振膜；112、驱动结构；1121、平面线圈；1122、磁体；11221、第一磁体；11222、第二磁体；1123、导磁板；1124、导磁环；1125、压电驱动结构；1125a、压电覆盖区域；1125b、非压电覆盖区域；11251、第一电极层；11252、第一压电层；11253、第二电极层；11254、第二压电层；11255、第三电极层；11256、中性层；113、弹性结构；114、引线；120、壳体；1201、前壳体；1202、后壳体；121、出声孔；1211、第一出声孔；1212、第二出声孔；121i、第i出声孔；121(n+1)、第n+1出声孔；1212-1，1212-2，1213-1、子出声孔；122、声学腔体；1221、第一声学腔体；1222、第二声学腔体；1223、第三声学腔体；123、固定环；1231、第一固定环；1232、第二固定环；130、质量块；140、阻尼/防尘网布；200、声学输出装置；201、第一孔部；202、第二孔部；203、第三孔部。
具体实施方式
为了更清楚地说明本说明书实施例的技术方案，下面将对实施例描述中所需要使用的附图作简单的介绍。显而易见地，下面描述中的附图仅仅是本说明书的一些示例或实施例，对于本领域的普通技术人员来讲，在不付出创造性劳动的前提下，还可以根据这些附图将本说明书应用于其它类似情景。除非从语言环境中显而易见或另做说明，图中相同标号代表相同结构或操作。
应当理解，本文使用的“系统”、“装置”、“单元”和/或“模块”是用于区分不同级别的不同组件、元件、部件、部分或装配的一种方法。然而，如果其他词语可实现相同的目的，则可通过其他表达来替换所述词语。
如本说明书和权利要求书中所示，除非上下文明确提示例外情形，“一”、“一个”、“一种”和/或“该”等词并非特指单数，也可包括复数。一般说来，术语“包括”与“包含”仅提示包括已明确标识的步骤和元素，而这些步骤和元素不构成一个排它性的罗列，方法或者设备也可能包含其它的步骤或元素。
本说明书中使用了流程图用来说明根据本说明书的实施例的系统所执行的操作。应当理解的是，前面或后面操作不一定按照顺序来精确地执行。相反，可以按照倒序或同时处理各个步骤。同时，也可以将其他操作添加到这些过程中，或从这些过程移除某一步或数步操作。
本说明书实施例提供一种扬声器，该扬声器包括壳体和多个发声单元。其中，多个发声单元沿第一方向间隔布置，且均沿第一方向振动，壳体被配置为容纳并支撑多个发声单元，壳体上设置有多个出声孔，壳体与多个发声单元围成多个声学腔体，每个声学腔体与壳体上至少一个出声孔声学耦合。发声单元可以产生声波，声波可以经由该发声单元所处的声学腔体以及与该声学腔体声学耦合的出声孔向外传递。在一些实施例中，多个发声单元均包括振膜以及设置在振膜上的驱动结构。驱动结构驱动振膜振动，处于振动状态的振膜推动声学腔体内的空气产生声波。本说明书实施例通过设置沿第一方向间隔布置的多个发声单元来优化扬声器，使扬声器在对体积有一定限制的前提下，提升声学输出，尤其是低频输出。且可以通过调整第一方向上发声单元的数量，来调节扬声器厚度方向的尺寸，使扬声器能够灵活适应使用场景。
图1A是根据本说明书一些实施例所示的扬声器的结构示意图。图1B是图1A所示的扬声器的截面图。图1C是图1B所示的扬声器截面的第一视图。
参见图1A-1C，扬声器100包括壳体120和沿第一方向间隔布置的多个发声单元110。
本说明书实施例描述的第一方向是指扬声器100的厚度方向，参考图1A中示出的z方向。发声单元110所在的布置平面与扬声器100的厚度方向(即第一方向)垂直。需要说明的是，本说明涉及的关于方向的描述，并不限制于绝对方向，也可以是近似方向。例如，沿第一方向间隔布置的多个发声单元110，也可以是近似沿第一方向间隔布置。又例如，发声单元110所在的布置平面与第一方向垂直，也可以是近似垂直。这里的近似方向是指与绝对方向(例如第一方向)成一定夹角的方向，所述夹角的范围可以为-30°-30°。
壳体120为内部具有容置腔的规则或不规则的立体结构，例如，壳体120可以是中空的框架结构体，包括但不限于矩形框、圆形框、正多边形框等规则形状，以及任何不规则形状。壳体120用于容置发声单元110。在一些实施例中，参见图1A-1C，壳体120可以为矩形框架结构体。为便于描述，本说明书以壳体120可以为矩形框架结构体为例进行说明。在一些实施例中，壳体120可以采用金属(例如，不锈钢、铜、铝合金等)、塑料(例如，聚乙烯(PE)、聚丙烯(PP)、聚氯乙烯(PVC)、聚苯乙烯(PS)及丙烯腈-丁二烯-苯乙烯共聚合物(ABS)等)、复合材料(例如金属基复合材料或非金属基复合材料)、环氧树脂、酚醛、陶瓷、聚酰亚胺、玻璃纤维(例如，FR4-玻璃纤维)、半导体材料(例如，硅、二氧化硅、氮化硅、碳化硅等)等或其任意组合。
发声单元110为用于产生声波的器件。发声单元110位于壳体120的容置腔内。在一些实施例中，发声单元110包括振膜和驱动结构。
驱动结构用于将音频信号(例如，包含音频信息的电信号)转换为机械振动。在一些实施例中，驱动结构包括压电层。压电层可以将音频信号转换为机械振动。由于压电层的逆压电效应，当电信号(音频信号)作用于压电层时，压电层会产生机械振动。在一些实施例中，压电层可以由压电材料制成，示例性的压电材料可以包括压电陶瓷、压电晶体、压电聚合物(例如，偏聚氟乙烯)等或其任意组合。在一些实施例中，驱动结构可以为任意形状，例如片状、块状、柱状、环状结构等或其任意组合。
振膜为将来自驱动结构的机械振动转换为声波的部件。在一些实施例中，振膜可以响应于驱动结构的振动而产生沿第一方向的振动，从而产生声波(声音信号)。在一些实施例中，驱动结构设置在振膜上。振膜直接响应驱动结构的形变或位移产生振动，可以以更大比例的振动驱动力推动振膜附件的空气振动，从而产生声波。在一些实施例中，振膜可以是具有弹性的薄膜结构。关于发声单元110的具体说明可以参见图4A、图6-图9及其相关描述。
当扬声器100的壳体120容置腔内布置单个发声单元110时，扬声器100的厚度尺寸较小。可以通过设置多个发声单元110在壳体120的容置腔内沿第一方向间隔布置，使得扬声器100厚度方向的尺寸可以灵活调节，并使扬声器100在满足设计尺寸较小的同时，获得较大的低频输出。在一些实施例中，第一方向间隔布置的发声单元110的数量可以根据实际需求确定。例如，根据对扬声器100厚度尺寸的要求确定第一方向间隔布置的发声单元110数量。又例如，根据对输出声压级的要求确定第一方向间隔布置的发声单元110数量。
在一些实施例中，沿第一方向间隔布置的多个发声单元110将壳体120容置腔分隔形成沿第一方向分布的多个声学腔体122。壳体120上对应设置多个出声孔，每个声学腔体122与壳体120上至少一个出声孔声学耦合，使每个声学腔体122均能与扬声器100外界连通，以将发声单元110产生的声波向外传递。如图1B和图1C所示，沿第一方向间隔布置n个发声单元110，n个发声单元110包括第一发声单元1101、第二发声单元1102……第n发声单元110n。将壳体120容置腔分隔形成沿第一方向分布的n+1个声学腔体122，壳体120上对应设置n+1个出声孔，n+1个出声孔121包括第一出声孔1211、第二出声孔1212……第n+1出声孔121(n+1)。每个声学腔体122与一个出声孔121声学耦合。在一些实施例中，出声孔121为贯穿壳体120的孔洞，将声学腔体122与壳体120外部连通。在一些实施例中，出声孔121可以为圆形、矩形、三角形等规则形状或不规则形状的孔洞，并不限制于如图1A-1C所示的长条状孔洞。
在一些实施例中，壳体120包括前壳体1201与后壳体1202。参见图1B，前壳体1201为沿第一方向靠近壳体120顶部的部分壳体120，后壳体1202为沿第一方向靠近壳体120底部的部分壳体120。前壳体1201与其相邻的发声单元110之间形成第一声学腔体1221，后壳体1202与其相邻的另一发声单元110形成第二声学腔体1222，两个相邻的发声单元110之间形成第三声学腔体1223，围成第三声学腔体1223的结构还包括两个相邻的发声单元110之间的部分壳体120。由于振膜可以响应于驱动结构的振动而产生沿第一方向向上、向下的振动，发声单元110可以在其上方、下方的声学腔体122内产生声波，所述声波经由与对应声学腔体122声学耦合的出声孔121向外传递。故与前壳体1201相邻的发声单元110独用第一声学腔体1221，与后壳体1202相邻的发声单元110独用第二声学腔体1222，两个相邻的发声单元110(包括与前壳体1201相邻的发声单元110及与后壳体1202相邻的发声单元110)共用两者之间的第三声学腔体1223。以与前壳体1201相邻的发声单元110为例，参见图1B和图 1C，第一发声单元1101独用第一声学腔体1221，第一发声单元1101与第二发声单元1102共用第一发声单元1101与第二发声单元1102之间的第三声学腔体1223，第一发声单元1101输出的声波经由第一声学腔体1221及第一发声单元1101与第二发声单元1102之间的第三声学腔体1223向外传递。
在一些实施例中，第一声学腔体1221对应的出声孔121沿第一方向朝上开设。在一些实施例中，第二声学腔体1222对应的出声孔121沿第一方向朝下开设。在一些实施例中，第一声学腔体1221、第二声学腔体1222及第三声学腔体1223对应的出声孔121可以垂直于第一方向侧向开设。在一些实施例中，侧向开设的出声孔121可以位于扬声器100的沿长边的一侧，也可以位于扬声器100的沿短边的一侧。在一些实施例中，为避免相邻声学腔体122对应的出声孔121输出的声波相互影响，产生干涉，相邻声学腔体122对应的出声孔121可以错开设置。在一些实施例中，相邻声学腔体122对应的出声孔121分别位于壳体120的相对两侧。例如，相邻声学腔体122对应的出声孔121分别位于壳体120沿长边的相对两侧。在另一实施例中，相邻声学腔体122对应的出声孔121分别位于壳体120的相邻两侧。例如，相邻声学腔体122中的一声学腔体122对应的出声孔121位于壳体120沿长边的一侧，相邻声学腔体122中的另一声学腔体122对应的出声孔121位于壳体120沿短边的一侧。在又一实施例中，相邻声学腔体122对应的出声孔121位于壳体120的同一侧，且相邻声学腔体122对应的出声孔121分别靠近相邻的壳体120两侧面设置，所述壳体120两侧面相对分布。例如，相邻声学腔体122对应的出声孔121位于壳体120的沿长边的同一侧，相邻声学腔体122对应的出声孔121分别靠近的壳体120沿短边的相对两侧设置。
在一些实施例中，壳体120包括多个固定环123，固定环123用于固定发声单元110。在一些实施例中，多个固定环123沿第一方向重叠设置，多个固定环123上下拼接形成前壳体1201与后壳体1202之间的壳体120部分，出声孔121开设在固定环123上。靠近前壳体1201的固定环123与前壳体1201连接，靠近后壳体1202的固定环123与后壳体1202连接。
图2A是根据本说明书一些实施例所示的扬声器截面的结构简图。图2B是根据本说明书一些实施例所示的振膜振动时的扬声器截面的结构简图。为便于说明，图2A与图2B示例性地示出了四个发声单元110。
在一些实施例中，如图2A-2B所示，在第一方向上，发声单元110设置在固定环123内。在一些实施例中，在第一方向上，发声单元110设置于固定环123的中间位置，即固定环123均匀分布在发声单元110的两侧。
在一些实施例中，前壳体1201可以与第一发声单元1101之间形成第一声学腔体1221，后壳体1202可以与第四发声单元1104之间形成第二声学腔体1222，而第一发声单元1101与第二发声单元1102之间、第二发声单元1102与第三发声单元1103以及第三发声单元1103之间则均形成第三声学腔体1223。
在一些实施例中，第一声学腔体1221和/或第二声学腔体1222沿第一方向的厚度小于第三声学腔体1223沿第一方向的厚度。可以理解地，如图2A-图2B所示，由于第一声学腔体1221与第二声学腔体1222分别是由一个发声单元110与前壳体1201、后壳体1202所形成，而第三声学腔体1223则是基于相邻两个发声单元110所构成，且由于发声单元110的两侧均匀分布有固定环123，因而第三声学腔体1223沿第一方向的厚度大于第一声学腔体1221和/或第二声学腔体1222沿第一方向的厚度。
在一些实施例中，多个发声单元110均沿第一方向振动可以包括多个发声单元110中的至少一个发声单元110沿竖直向上的方向振动和/或至少一个发声单元110沿竖直向下的方向振动。进一步地，多个发声单元110均沿第一方向振动可以包括多个发声单元110中相邻且共用多个声学腔体122中至少一个声学腔体122的两个发声单元110朝着相反方向振动。如图2A-图2B所示，第一发声单元1101沿竖直向下的方向振动，第二发声单元1102沿竖直向上的方向振动；第三发声单元1103沿竖直向下的方向振动，第四发声单元1104沿竖直向上的方向振动。需要说明的是，在激励信号下，多个发声单元110中相邻且共用多个声学腔体122中至少一个声学腔体122的两个发声单元110可以在全频段朝着相反方向振动，以增强扬声器100在全频段的输出声压级。在一些实施例中，在激励信号下，多个发声单元110中相邻且共用多个声学腔体122中至少一个声学腔体122的两个发声单元110在至少部分低频段内朝着相反方向振动，以提升包括扬声器100的声学输出装置(例如声学输出装置200)在至少部分低频段的输出声压级，满足目前的声学输出装置对低频段的输出声压级逐渐提高的要求。
在一些实施例中，通过控制多个发声单元110的激励电压，使至少一个声学腔体122的两个发声单元110上的激励电压的相位差为180°，从而可以使多个发声单元110中相邻且共用多个声学腔体122中至少一个声学腔体122的两个发声单元110在至少部分低频段朝着相反方向振动。基于多个发声单元110中相邻且共用多个声学腔体122中至少一个声学腔体122的两个发声单元110在至少部分低频段朝着相反方向振动，配合本说明书一些实施例所示的出声孔121的设计，可以使具有n个发声单元 110的扬声器100(叠层扬声器)输出的声压级相较于仅有一个发声单元110的扬声器100(单层扬声器)输出的声压级增加20×log10(n)倍。
在一些实施例中，至少部分低频段可以包括小于500Hz的部分频段。在一些实施例中，至少部分低频段可以包括小于300Hz的部分频段。例如，部分频段可以是50Hz-100Hz；例如，部分频段可以是100Hz-150Hz；又例如，部分频段可以是150Hz-280Hz等。
在一些实施例中，每个固定环123的周侧开设有两个出声孔121，两个出声孔121分别与发声单元110相反两侧的声学腔体122耦合。固定环123的周侧可以理解为固定环123的四周。例如，当扬声器100设计为长方体结构时，固定环123的周侧可以包括一对长边侧和一对短边侧。
在一些实施例中，出声孔121可以相对设置于固定环123的两侧(如，相对的长边侧或相对的短边侧)或相邻设置于固定环123的两侧(如，相邻的长边侧与短边侧)，以分别与两个不同的声学腔体122耦合。
如图2A所示，虚线表示相邻两个固定环123的连接面，第一固定环1231的周侧开设有两个出声孔，分别为第一出声孔1211、子出声孔1212-1，第二固定环1232的周侧开设有两个出声孔，分别为出声孔子1212-2、子出声孔1213-1。其中，子出声孔1212-1与子出声孔1212-2连通，可以构成一个与声学腔体122相耦合的完整的第二出声孔1212。在一些实施例中，多个固定环123也可以是一体成型的，此时可以视为壳体120仅包括一个固定环123，多个发声单元110均设置在一个固定环123内。
在一些实施例中，在第一方向上，第一声学腔体1221和/或第二声学腔体1222对应的出声孔121的尺寸小于第三声学腔体1223对应的出声孔121的尺寸。其中，出声孔121的尺寸可以包括但不限于出声孔121沿第一方向上的高度等。
本说明书的一些实施例，基于多个发声单元110中相邻且共用多个声学腔体122中至少一个声学腔体122的两个发声单元110在至少部分低频段朝着相反方向振动，配合本说明书一些实施例所示的出声孔121的设计，可以使具有n个发声单元110的扬声器100(叠层扬声器)输出的声压级相较于仅有一个发声单元110的扬声器100(单层扬声器)输出的声压级得以提升，进而利用单层的发声单元110厚度小的优势，可以实现厚度尺寸较小、低频输出声压级大的扬声器100。
图3A是根据本说明书一些实施例所示的固定环与电极的结构示意图；图3B是图3A中A-A处的剖面图。
在一些实施例中，壳体120可以包括前壳体1201与后壳体1202，每个固定环123上设置有至少两个电极，每个固定环123上的至少两个电极分别通过对应的导通电极连接至前壳体1201或后壳体1202。
在一些实施例中，每个固定环123上的电极数量包括但不限于两个。例如，基于实际需求，每个固定环123上的电极数量也可以是3个。如图3A-图3B所示，固定环123可以包括两个电极，分别为电极E1与电极E2。
在一些实施例中，基于每个固定环123上的至少两个电极(如，电极E1、电极E2)，可以为固定于该固定环123上的发声单元110提供激励信号(如，激励电压)。
导通电极是指连通各固定环123上相应电极的电极结构。如图3B所示，第一导通电极D1可以连接各固定环123上的电极E1至前壳体1201或后壳体1202，第二导通电极D2可以连接各固定环123上的电极E2至前壳体1201或后壳体1202。
在一些实施例中，固定环123作为壳体120的一部分，固定环123的材质可以与壳体120的材质一致。在一些实施例中，固定环123可以包括FR4、FPC、塑料中的一种或多种，固定环123设置有至少两个沿第一方向延伸的导连孔，至少两个电极分别设置在对应的导连孔内，任意相邻的两个固定环123对应的电极可以相互导通形成导通电极。其中，相互导通是指电极与电极之间实现电学连接。
例如，当固定环123采用FR4、FPC时，可以直接通过导连孔实现固定环123两端面的导通，再利用涂覆导电银浆、导电胶、贴片等方式可以实现各固定环123上的至少两个电极相互导通形成对应的导通电极。又例如，当固定环123采用塑料等树脂类聚合物材料时，可以将金属电极设置于导连孔内，以实现任意相连的两个固定环123对应的电极相互导通形成导通电极。
图4A是根据本说明书一些实施例所示的发声单元的结构示意图。图4A所示的发声单元110可以为本说明书任一实施例中扬声器100包括的发声单元110。
如图4A所示，发声单元110包括振膜111和驱动结构112，驱动结构112设置在振膜111上。其中，驱动结构112包括压电驱动结构(例如图10所示的压电驱动结构1125)，由于压电的逆压电效应，当电信号(音频信号)作用于压电驱动结构时，压电驱动结构会产生机械振动。振膜111的周侧与固定环123位于声学腔体122内的内壁连接，并覆盖固定环123内部区域，以将固定环123内部区域分隔为位于振膜111相反两侧的两个相邻声学腔体122，即前腔和后腔。振膜111接收压电驱动结构的 振动并产生振动，这时振膜111可以分别推动前腔和后腔内的空气产生声波。由于振膜111与驱动结构112之间无冗余的结构设计，振膜111直接响应驱动结构112产生振动，相较于在驱动结构112与振膜111之间设置有额外的振动传递单元，本说明书涉及的扬声器100可将更大比例的振动驱动力用于产生声音信号，使得输出的声压级获得提升，同时使得扬声器100的整体厚度明显降低。
在一些实施例中，振膜111的周侧与固定环123的内壁嵌接，实现振膜111与固定环123的连接。仅作为示例地，固定环123的内壁上沿其环向设置有凹槽，振膜111的周侧嵌入凹槽，实现与固定环123的固定。
在一些实施例中，驱动结构112可以为板状结构体。在一些实施例中，驱动结构112可以为圆形、椭圆形、方形、五边形、六边形、八边形以及其他多边形等规则或不规则形状的板状结构体。在一些实施例中，驱动结构112还可以为片状、杆状结构体。为便于描述，本说明书以驱动结构112为方形的板状结构体为例进行说明。在一些实施例中，如图4A所示，驱动结构112设置于振膜111位于前腔的一侧，振膜111位于前腔的一侧与驱动结构112靠近后腔的一侧连接。在另一些实施例中，驱动结构112设置于振膜111位于后腔的一侧，振膜111位于后腔的一侧与驱动结构112靠近前腔的一侧连接。在还一些实施例中，发声单元110可以包括两个振膜111，两个振膜111分别设置在驱动结构112沿第一方向的两侧。其中一个振膜111位于前腔，与驱动结构112靠近前腔的一侧连接；另一个振膜111位于后腔，与驱动结构112靠近后腔的一侧连接。在一些实施例中，为使驱动结构112对振膜111的驱动较为均匀，以使振膜111能够以较大振动幅度推动空气，驱动结构112设置于振膜111的中部区域。在一些实施例中，驱动结构112与振膜111连接的同时，驱动结构112还与固定环123连接，以避免驱动结构112的质量影响振膜111的振动状态。在一些实施例中，为避免驱动结构112与固定环123的连接限制振膜111的振动，而使得驱动结构112无法驱动振膜111振动，驱动结构112通过弹性结构113与固定环123连接。具体地，弹性结构113的第一端与驱动结构112的周侧连接，弹性结构113的第二端与固定环123的内壁连接。在一些实施例中，弹性结构113的第二端与固定环123的内壁嵌接，实现弹性结构113与固定环123的连接。
在一些实施例中，扬声器100可以具有一个发声单元110。图4B是根据本说明书一些实施例所示的具有一个发声单元的扬声器的结构示意图。如图4B所示，扬声器100可以包括壳体120和发声单元110。发声单元110垂直第一方向设置于壳体120的容置腔内。其中，壳体120包括固定环123，固定环123为沿第一方向延伸的筒形结构，用于支撑固定发声单元110。关于发声单元110及发声单元110与固定环123连接的具体说明可以参见图4A及其相关描述。
在一些实施例中，壳体120还包括前壳体1201，前壳体1201与固定环123沿第一方向的上端面连接。在一些实施例中，前壳体1201形成为具有孔洞的板状结构体。所述孔洞为出声孔121。在一些实施例中，壳体120还包括后壳体(图中未示出)，后壳体与固定环123沿第一方向的下端面连接。在一些实施例中，后壳体1202形成为具有孔洞的板状结构体。所述孔洞为又一出声孔121。发声单元110包括振膜111和驱动结构112，振膜111将容置腔分隔为位于振膜111相反两侧的前腔(即第一声学腔体1221)和后腔(即第二声学腔体1222)。振膜111响应驱动结构112的形变或位移产生振动，振膜111的振动推动前腔或后腔内的空气产生波动，即声波(声音信号)，声波可以经由前壳体1201或后壳体1202上设置的出声孔121向外传递。
在一些实施例中，如图4B所示，振膜111位于前腔的一侧与驱动结构112靠近后腔的一侧连接，这时，振膜111可以推动后腔内的空气产生声波，声波经由后壳体1202上设置的出声孔121向外传递。在另一些实施例中，振膜111位于后腔的一侧与驱动结构112靠近前腔的一侧连接，这时，振膜111可以推动前腔内的空气产生声波，声波经由前壳体1201上设置的出声孔121向外传递。
在一些实施例中，前壳体1201或后壳体1202上的出声孔121通过封装实现防尘的目的。在一些实施例中，出声孔121可以采用阻尼/防尘网布140实现防尘封装。在一些实施例中，如图4B所示，单个实现防尘封装的发声单元110即可作为扬声器。在一些实施例中，如图1A所示，在包括多个沿第一方向间隔布置的发声单元110的扬声器100中，可以在多个声学腔体122各自对应的出声孔121设置阻尼/防尘网布140实现防尘封装。在一些实施例中，对于如图1A所示的扬声器100，相邻的两个发声单元110之间可以不进行防尘封装，从而使得位于相邻的两个发声单元110之间的前腔与后腔不被分隔，可以形成声学腔体122。在一些实施例中，对于如图1A所示的扬声器100，相邻的两个发声单元110之间也可以进行防尘封装(例如设置在相邻的两个发声单元110之间设置阻尼/防尘网布140，图中未示出)，从而对扬声器100的输出声压级以及输出频响的Q值进行调节。
图5为图4B所示的扬声器的俯视图。如图5所示，驱动结构112的相对两侧均通过弹性结构113与固定环123相连，两侧的弹性结构113相对于驱动结构112的长轴(参见图5所示x轴)对称。对称设置的弹性结构113可以防止发声单元110出现翻转的振动模态。在一些实施例中，两侧的弹性结 构113相对于驱动结构112的短轴(参见图5所示y轴)对称。其中，长轴为驱动结构112沿长轴方向的中线，短轴为驱动结构112沿短轴方向的中线。
在一些实施例中，弹性结构113为弯折形状，能够在有效的空间内增加弹性结构113的有效长度，降低弹性结构113的刚度，从而降低对振膜111整体刚度的影响，有利于增大振膜111的振动幅度，提高扬声器100的声学输出。
图6是根据本说明书一些实施例所示的发声单元110的结构示意图。图6所示的发声单元110与图4A所示的发声单元110类似，其主要区别在于：振膜111上设置有引线114(即电极)，发声单元110不包括弹性结构113，驱动结构112的相对两侧通过引线114与振膜111连接。在一些实施例中，引线114直接制备在振膜111上。
本实施例中的驱动结构112不与固定环123连接，可以避免驱动结构112与固定环123的连接增大振膜111的刚性，从而避免减小振膜111的振动幅度。
以下将结合图7-图9说明驱动结构112为电磁式驱动结构112时的发声单元110。所述发声单元110可以为本说明书任一实施例中扬声器100包括的发声单元110。
图7是根据本说明书另一些实施例所示的发声单元的结构示意图。
如图7所示，发声单元110包括振膜111和驱动结构112。振膜111的周侧与固定环123的内壁连接，具体参见图4A及相关描述。驱动结构112包括平面线圈1121和磁路组件，平面线圈1121设置在振膜111上，磁路组件包括磁体1122、导磁板1123和导磁环1124。其中，导磁环1124在垂直于第一方向的平面内环绕平面线圈1121设置，磁体1122设置于振膜111背离平面线圈1121的一侧，磁体1122在第一方向上与振膜111间隔开设置，导磁板1123支撑连接于磁体1122沿第一方向的下表面。当音频信号作用于平面线圈1121时，平面线圈1121产生电磁波，与磁路组件的电磁场发生切割，从而产生驱动力，驱动力驱动振膜111振动。
在一些实施例中，导磁环1124沿第一方向延伸的外壁与固定环123的内壁连接固定。在一些实施例中，导磁板1123的周侧与固定环123的内壁连接固定。本说明书中所述的“连接”可以理解为同一结构上不同部位之间的连接，或者在分别制备不同部件或结构后，将各独立部件或结构通过焊接、铆接、卡接、螺栓连接、胶黏剂粘合等方式固定连接，或者在制备过程中，通过物理沉积(例如，物理气相沉积)或者化学沉积(例如，化学气相沉积)的方式将第一部件或结构沉积在第二部件或结构上。振膜111分隔固定环123内部的腔体，振膜111沿第一方向的上方形成前腔(即第一声学腔体1221)，振膜111与导磁板1123之间形成后腔(即第二声学腔体1222)，振膜111振动时推动前腔、后腔内空气波动，产生声波。在一些实施例中，导磁板1123上设置有出声孔121，用于将后腔内产生的声波向外传递。在一些实施例中，驱动结构112可以不包括导磁板1123，磁体1122周侧设置一圈导磁材料，形成导磁圈，磁体1122通过导磁圈与固定环123内壁连接固定，可以减小发声单元110的厚度尺寸，从而减小扬声器100的厚度尺寸。
在一些实施例中，为使磁体1122和平面线圈1121相互作用较大，以产生较大的驱动力驱动振膜111，磁体1122与平面线圈1121平行或近似平行设置，也就是说，振膜111、磁体1122与平面线圈1121平行或近似平行设置。在一些实施例中，为使磁体1122和平面线圈1121对振膜111的驱动较为均匀，以使振膜111能够以较大振动幅度推动空气，平面线圈1121设置于振膜111的中部区域，磁体1122在垂直于第一方向的平面内趋近振膜111的中部区域设置。
在一些实施例中，平面线圈1121的材料可以包括铜、金、铝、钛、铂等材料或其中几种的复合材料。在一些实施例中，磁体1122可以包括永磁铁(例如铝铁硼)和/或电磁铁。在一些实施例中，导磁环1124或导磁板1123的材料可以为导磁材料。示例性的导磁材料可以包括但不限于硅钢、锰锌铁氧体、镍锌铁氧体、铁等。在一些实施例中，固定环123的材料可以为半导体材料。
在一些实施例中，发声单元110可以采用半导体工艺制备。例如，通过在硅片上制备振膜111对应的振膜层，然后在振膜层上沉积、溅射或蒸发形成平面线圈1121层，再通过光刻刻蚀形成所需平面线圈1121形状，此时平面线圈1121位于振膜111上表面。又例如，在硅片上沉积、溅射或蒸发、光刻刻蚀形成平面线圈1121层，在此基础上再旋涂、溅射、蒸发进行制备，采用光刻刻蚀形成所需振膜层形状，此时平面线圈1121位于振膜111下表面。再例如，固定环123为硅材料，由硅片背腔刻蚀获得。在一些实施例中，发声单元110可以采用常规工艺制备。例如，振膜111可直接采用聚酰亚胺(PI)、聚醚醚酮(peek)等材料的膜，也可采用聚酰亚胺(PI)、聚醚醚酮(peek)等材料旋涂固化形成膜；并在振膜111上通过印刷工艺实现平面线圈1121的制备。
本实施例通过采用平面线圈1121等相关结构设计，可以使得扬声器100的厚度尺寸较小。
图8是根据本说明书又一些实施例所示的发声单元110的结构示意图。图8所示的发声单元110与图7所示的发声单元110类似，其主要区别在于：振膜111在第一方向上的相反两侧分别设置有 第一磁体11221和第二磁体11222。振膜111与第一磁体11221之间形成前腔(即第一声学腔体1221)，振膜111与第二磁体11222之间形成后腔(即第二声学腔体1222)。当音频信号作用于平面线圈1121时，平面线圈1121产生电磁波，第一磁体11221和第二磁体11222的电磁场发生切割，从而产生驱动力，驱动力驱动振膜111振动，振膜111振动时推动前腔、后腔内空气波动，产生声波。
在一些实施例中，第一磁体11221和第二磁体11222的周侧均设置一圈导磁材料，形成导磁圈，第一磁体11221和第二磁体11222均通过导磁圈与固定环123内壁连接固定，可以减小发声单元110的厚度尺寸，从而减小扬声器100的厚度尺寸。在一些实施例中，第一磁体11221和第二磁体11222上均设置有出声孔121，用于将前腔及后腔内产生的声波向外传递。
本实施例通过在振膜111在第一方向上的相反两侧均设置有磁体1122，可以增大平面线圈1121所在区域的磁场强度，以增大施加于振膜111的驱动力，提高振膜111的振动幅度。
图9是根据本说明书又一些实施例所示的发声单元110的结构示意图。图9所示的发声单元110与图8所示的发声单元110类似，其主要区别在于：振膜111在第一方向上的相反两侧分别设置有第一磁体11221和第二磁体11222，其中，第一磁体11221和第二磁体11222均为分离式磁体。分离式磁体为按一定形状分布的磁体1122，分离式磁体上具有镂空区域和磁体区域。在一些实施例中，平面线圈1121按环形分布，分离式磁体的分布形状与平面线圈1121的分布形状相对应。其中，分离式磁体1122的磁体区域沿第一方向的投影与平面线圈1121沿第一方向的投影至少部分重叠。本实施例通过设置分离式磁体，在平面线圈1121上的各环对应设置磁体区域，平面线圈1121各环对应的各磁体区域可以根据需求进行单独充磁，实现平面线圈1121各环处的磁极方向和磁场强度的单独调控。例如，可以通过调控实现平面线圈1121中间环处的磁场强度最大，以提高振膜111的振动幅度。
在一些实施例中，参见图4A，驱动结构112可以包括压电驱动结构(例如图10所示的压电驱动结构1125)，压电驱动结构包括压电材料。在一些实施例中，压电材料的杨氏模量为30GPa-100GPa，以保证驱动结构112的刚性不至于过度限制振膜111振动。优选地，压电材料的杨氏模量为40GPa-90GPa。更优选地，压电材料的杨氏模量为50GPa-80GPa。
图10是根据本说明书一些实施例所示的压电驱动结构的截面图。
如图10所示，压电驱动结构1125沿第一方向自上往下依次包括第一电极层11251、第一压电层11252、第二电极层11253、第二压电层11254及第三电极层11255。在一些实施例中，第一电极层11251、第一压电层11252、第二电极层11253、第二压电层11254及第三电极层11255及振膜111通过其相邻侧面依次连接。
在一些实施例中，压电层(第一压电层11252及第二压电层11254)的材料可以包括但不限于锆钛酸铅(PZT)或氧化锌(ZnO)或氮化铝(AlN)及其组合。在一些实施例中，电极层(第一电极层11251、第二电极层11253及第三电极层11255)的材料可以包括但不限于铂(Pt)、金(Au)或钛(Ti)及其任意组合。在一些实施例中，振膜111的材料可以为柔性高分子材料。示例性的柔性高分子材料包括但不限于聚酰亚胺(PI)、聚对苯二甲酸乙二醇酯(PET)、聚乙烯亚胺(PEI)、聚醚醚酮(PEEK)、硅胶、聚碳酸酯(PC)、乙烯基聚合物(PVC)、丙烯腈-丁二烯-苯乙烯共聚物(ABS)、聚乙烯(PE)、聚对二甲苯(PPX)中的一种或多种等，也可以是由上述材料复合而成的多层复合材料。在一些实施例中，柔性高分子材料的杨氏模量范围为1GPa-9GPa(例如2GPa-8GPa、3GPa-7GPa或4GPa-6GPa等)。在一些实施例中，振膜111的材料可以为半导体材料。示例性的半导体材料包括但不限于硅(Si)、二氧化硅(SiO2)、氮化硅(SixNy)中的一种或多种等，也可以是由上述材料复合而成的多层复合材料。在一些实施例中，半导体材料的杨氏模量范围为100GPa-200GPa(例如120GPa-190GPa、130GPa-180GPa或140GPa-170GPa等)。
在一些实施例中，电极层的厚度尺寸范围可以包括80nm-200nm(例如100nm-180nm、120nm-160nm或130nm-150nm等)。在一些实施例中，压电层采用磁控溅射工艺或溶胶凝胶等MEMS工艺制备时，压电层的厚度尺寸范围为1um-3um(例如1.5nm-2.5nm、1.6nm-2.8nm或1.8nm-2.6nm等)。压电层采用烧结工艺制备时，压电层的厚度尺寸范围为20um-100um(例如20nm-80nm、30nm-60nm或30nm-50nm等)。
在一些实施例中，压电驱动结构1125具有d33模式与d31模式。在一些实施例中，在各电极层施加沿第一方向的电压，此时压电层沿第一方向与沿第二方向(参见图11A所示的x方向)均会产生伸缩变形(如图11B所示)。若仅靠第一方向的d33模式，压电驱动结构1125的变形量极小，此时发声单元110输出的声压级无法满足实际需求。为了保证压电驱动结构1125能够具有较大的第一方向上的位移，以使振膜111的振幅较大，可以使用与第一方向垂直的方向的d31模式。
图11A是根据本说明书一些实施例所示的压电驱动结构变形前的结构示意图。图11B是根据本说明书一些实施例所示的压电驱动结构变形后的结构示意图。
在一些实施例中，压电驱动结构1125包括烧结压电陶瓷。烧结压电陶为采用烧结工艺制备的压电陶瓷层(即压电层)。压电陶瓷层的厚度受工艺限制，其厚度尺寸大于15um，因此压电陶瓷层的厚度优选高于振膜111厚度(如图11A所示)，此时中性层11256位于压电驱动结构1125内部(如图11B所示)。
在一些实施例中，中性层11256位于压电驱动结构1125内部时，为了保证压电驱动结构1125能够具有较大的第一方向上的位移，以使振膜111的振幅较大，可以通过设计各压电层的极化方向与施加电压的正负实现，使得沿第一方向位于中性层11256两侧的材料的变形方向相反。
图12A是根据本说明书一些实施例所示的压电驱动结构各压电层极化方向的示意图。
以两层压电层为例，当第一压电层11252与第二压电层11254的极化方向相同时(例如，如图12A所示的均沿第一方向朝上)，为了使得第一压电层11252与第二压电层11254的变形相反，即一个拉伸变形，另一个压缩变形，第一压电层11252与第二压电层11254的电势方向可以相反。在一些实施例中，第一电极层11251的第一电压以及第三电极层11255的第三电压可以均大于第二电极层11253的第二电压，第一电极层11251的第一电压以及第三电极层11255的第三电压也可以均小于第二电极层11253的第二电压。例如，第一电压等于第三电压，第二电压为0V。
当第一电压及第三电压均大于第二电压时，第一压电层11252的电势方向沿第一方向向下，与极化方向相反，第一压电层11252压缩；第二压电层11254的电势方向沿第一方向向上，第二压电层11254的与极化方向相同，第二压电层11254拉伸。由于中性层11256位于压电驱动结构1125内，压电驱动结构1125整体向下弯曲变形，此时发声单元110整体向下弯曲变形，振膜111拉伸。当第一电压及第三电压均小于第二电压时，第一压电层11252的电势方向沿第一方向向上，与极化方向相同，第一压电层11252拉伸；第二压电层11254的电势方向沿第一方向向下，与极化方向相反，第二压电层11254压缩。由于中性层11256位于压电驱动结构1125内，压电驱动结构1125整体向上弯曲变形，此时发声单元110整体向上弯曲变形，振膜111压缩。
图12B是根据本说明书一些实施例所示的压电驱动结构各压电层极化方向的示意图。
以两层压电层为例，当第一压电层11252与第二压电层11254的极化方向相反时(例如，如图12B所示，第一压电层11252的极化方向沿第一方向朝上，第二压电层11254的极化方向沿第一方向朝下)，为了使得第一压电层11252与第二压电层11254的变形相反，第一压电层11252与第二压电层11254的电势方向可以相同，在一些实施例中，第一电压、第二电压、第三电压可以依次减小，也可以依次增大。
当第一电压、第二电压、第三电压依次减小时，第一压电层11252的电势方向沿第一方向向下，与极化方向相反，第一压电层11252压缩；第二压电层11254的电势方向沿第一方向向下，第二压电层11254的与极化方向相同，第二压电层11254拉伸。由于中性层11256位于压电驱动结构1125内，压电驱动结构1125整体向下弯曲变形，此时发声单元110整体向下弯曲变形，振膜111拉伸。当第一电压、第二电压、第三电压依次增大时，第一压电层11252的电势方向沿第一方向向上，与极化方向相同，第一压电层11252拉伸；第二压电层11254的电势方向沿第一方向向上，与极化方向相反，第二压电层11254压缩。由于中性层11256位于压电驱动结构1125内，压电驱动结构1125整体向上弯曲变形，此时发声单元110整体向上弯曲变形，振膜111压缩。
图13A是根据本说明书一些实施例所示的压电驱动结构变形前的结构示意图。图13B是根据本说明书一些实施例所示的压电驱动结构变形后的结构示意图。
在一些实施例中，压电驱动结构1125包括MEMS压电陶瓷。MEMS压电陶瓷为采用MEMS工艺制备的压电陶瓷层(即压电层)。这里的压电陶瓷层的厚度较小，因此压电陶瓷层的厚度优选小于振膜111厚度，如图13A所示，此时中性层11256位于压电驱动结构1125外，即位于振膜111内部。
在一些实施例中，中性层11256位于压电驱动结构1125外、振膜111内部时，为了保证压电驱动结构1125能够具有较大的第一方向上的位移，以使振膜111的振幅较大，可以通过设计各压电层的极化方向与施加电压的正负实现，使得沿第一方向位于中性层11256一侧的压电驱动结构1125的各材料的变形方向相同，使得沿第一方向位于中性层11256两侧的材料的变形方向相反。
图14A是根据本说明书一些实施例所示的压电驱动结构各压电层极化方向的示意图。图14B是根据本说明书一些实施例所示的压电驱动结构各压电层极化方向的示意图。
以两层压电层为例，当第一压电层11252与第二压电层11254的极化方向相反时，如图14A所示，第一压电层11252的极化方向沿第一方向朝上，第二压电层11254的极化方向沿第一方向朝下；或者，如图14B所示，第一压电层11252的极化方向沿第一方向朝下，第二压电层11254的极化方向沿第二方向朝上。为了使得第一压电层11252与第二压电层11254的变形相同，第一压电层11252与第二压电层11254的电势方向相反。在一些实施例中，第一电极层11251的第一电压以及第三电极层11255 的第三电压可以均大于第二电极层11253的第二电压，第一电极层11251的第一电压以及第三电极层11255的第三电压也可以均小于第二电极层11253的第二电压。
图14A中，当第一电压及第三电压均大于第二电压时，第一压电层11252的电势方向沿第一方向向下，与极化方向相反，第一压电层11252压缩；第二压电层11254的电势方向沿第一方向向上，第二压电层11254的与极化方向相反，第二压电层11254压缩。由于中性层11256位于压电驱动结构1125外、振膜111内部，压电驱动结构1125整体压缩，振膜111拉伸，发声单元110整体向下弯曲变形。当第一电压及第三电压均小于第二电压时，第一压电层11252的电势方向沿第一方向向上，与极化方向相同，第一压电层11252拉伸；第二压电层11254的电势方向沿第一方向向下，与极化方向相同，第二压电层11254拉伸。由于中性层11256位于压电驱动结构1125外、振膜111内部，压电驱动结构1125整体拉伸，振膜111压缩，发声单元110整体向上弯曲变形。
图14B中，当第一电压及第三电压均大于第二电压时，第一压电层11252的电势方向沿第一方向向下，与极化方向相同，第一压电层11252拉伸；第二压电层11254的电势方向沿第一方向向上，第二压电层11254的与极化方向相同，第二压电层11254拉伸。由于中性层11256位于压电驱动结构1125外、振膜111内部，压电驱动结构1125整体拉伸，振膜111压缩，发声单元110整体向上弯曲变形。当第一电压及第三电压均小于第二电压时，第一压电层11252的电势方向沿第一方向向上，与极化方向相反，第一压电层11252压缩；第二压电层11254的电势方向沿第一方向向下，与极化方向相反，第二压电层11254压缩。由于中性层11256位于压电驱动结构1125外、振膜111内部，压电驱动结构1125整体压缩，振膜111拉伸，发声单元110整体向下弯曲变形。
图14C是根据本说明书一些实施例所示的压电驱动结构各压电层极化方向的示意图。图14D是根据本说明书一些实施例所示的压电驱动结构各压电层极化方向的示意图。
以两层压电层为例，当第一压电层11252与第二压电层11254的极化方向相同时，如图14C所示，第一压电层11252及第二压电层11254的极化方向均沿第一方向朝上；或者，如图14D所示，第一压电层11252及第二压电层11254的极化方向均沿第一方向朝下。为了使得第一压电层11252与第二压电层11254的变形相同，第一压电层11252与第二压电层11254的电势方向相同。在一些实施例中，第一电压、第二电压、第三电压可以依次减小，也可以依次增大。
图14C中，当第一电压、第二电压、第三电压依次减小时，第一压电层11252的电势方向沿第一方向向下，与极化方向相反，第一压电层11252压缩；第二压电层11254的电势方向沿第一方向向下，第二压电层11254的与极化方向相反，第二压电层11254压缩。由于中性层11256位于压电驱动结构1125外、振膜111内部，压电驱动结构1125整体压缩，振膜111拉伸，发声单元110整体向下弯曲变形。当第一电压、第二电压、第三电压依次增大时，第一压电层11252的电势方向沿第一方向向上，与极化方向相同，第一压电层11252拉伸；第二压电层11254的电势方向沿第一方向向上，与极化方向相同，第二压电层11254拉伸。由于中性层11256位于压电驱动结构1125外、振膜111内部，压电驱动结构1125整体拉伸，振膜111压缩，发声单元110整体向上弯曲变形。
图14D中，当第一电压、第二电压、第三电压依次减小时，第一压电层11252的电势方向沿第一方向向下，与极化方向相同，第一压电层11252拉伸；第二压电层11254的电势方向沿第一方向向下，与极化方向相同，第二压电层11254拉伸。由于中性层11256位于压电驱动结构1125外、振膜111内部，压电驱动结构1125整体拉伸，振膜111压缩，发声单元110整体向上弯曲变形。当第一电压、第二电压、第三电压依次增大时，第一压电层11252的电势方向沿第一方向向上，与极化方向相反，第一压电层11252压缩；第二压电层11254的电势方向沿第一方向向上，第二压电层11254的与极化方向相反，第二压电层11254压缩。由于中性层11256位于压电驱动结构1125外、振膜111内部，压电驱动结构1125整体压缩，振膜111拉伸，发声单元110整体向下弯曲变形。
在一些实施例中，为了符合常用耳机、音频眼镜等消费电子产品电池供电能力与功耗，第一驱动电压的绝对值与第二驱动电压的绝对值均不高于5V。其中，第一压电层11252的第一驱动电压为第一电压与第二电压之差，第二压电层11254的第二驱动电压为第二电压与第三电压之差。
振膜111上的悬空区域是指振膜111悬置于声学腔体122内的区域。悬空区域为振膜111表面区域减去振膜111与固定环123接触的区域。在一些实施例中，悬空区域包括压电覆盖区域与非压电覆盖区域。其中，压电覆盖区域是指压电驱动结构1125沿第一方向投影在振膜111上的振膜111表面区域。非压电覆盖区域是压电覆盖区域之外的振膜111表面区域。所述振膜111表面区域为振膜111垂直于第一方向的表面区域。
在一些实施例中，由于烧结压电陶瓷的振膜111厚度小于压电层的厚度，振膜111对于扬声器100的谐振频率和输出声压级的影响不明显，扬声器100的输出声压级主要受压电驱动结构1125的尺寸影响。
定义参数β为压电覆盖区域面积Sq与振膜111悬空面积Sp比值。其中，压电覆盖区域面积为振膜111压电覆盖区域的面积，振膜111悬空面积为振膜111悬空区域的面积。
当β较大时，压电覆盖区域的面积大，更多的压电材料参与驱动，因而推动空气体积增加，输出声压级增加，当β较小时，相应输出声压级降低。
图15是根据本说明书一些实施例所示的是β不同取值对应的扬声器的频响曲线图。
如图15所示，当β＝0.2时，扬声器100的输出声压级较低；当β＝0.4时，相较β＝0.2时，输出声压级有明显提升；当β继续增大，例如，α＝0.5、0.61或0.8时，扬声器100的输出声压级进一步提升。因此，在一些实施例中，β的取值范围为β≥0.4。优选地，β的取值范围为β≥0.61。
图16是根据本说明书一些实施例所示的压电驱动结构的四分之一结构示意图。
如图16所示，压电驱动结构1125可以为多块分离结构。压电驱动结构1125的第一块位于振膜111的中心区域，压电驱动结构1125的第二块环绕第一块设置，位于相应地，振膜111上的压电覆盖区域1125a可以分为两部分：位于振膜111中心区域以及环绕第一压电覆盖区域的第二压电覆盖区域，第二压电覆盖区域为环形。振膜111的表面区域除开压电覆盖区域1125a后的剩余区域为非压电覆盖区域1125b。
在一些实施例中，由于MEMS工艺制备的压电陶瓷的振膜111厚度大于压电层的厚度，振膜111对于扬声器100的谐振频率和输出声压级具有明显影响。振膜111的顺性主要来源于非压电覆盖区域1125b，当非压电覆盖区域1125b的面积较小时，会导致非压电覆盖区域1125b的顺性太小，扬声器100谐振频率较高，该非压电覆盖区域1125b的面积较大时，会导致非压电覆盖区域1125b的顺性太大，在较低频率范围内产生局部高阶模态，影响扬声器100输出。
定义参数α为非压电覆盖区域面积Sd与振膜111悬空面积Sp的比值。图16所示的非压电覆盖区域的面积为第一压电覆盖区域及第二压电覆盖区域的面积之和。
当α较大，非压电覆盖区域的面积较大，非压电覆盖区域的顺性太大，在较低频率产生局部高阶模态，导致扬声器100输出降低。当α较小时，非压电覆盖区域面积较小，非压电覆盖区域的顺性减小，谐振频率增加，在谐振频率后频段输出声压级也会增加。
图17是根据本说明书一些实施例所示的是α不同取值对应的扬声器的频响曲线图。
如图17所示，当α＝0.75时，扬声器100的谐振频率较低，输出声压级较低，且频响峰谷明显；当α＝0.65时，相较α＝0.75时，输出声压级有明显提升，提升超过10dB；当α继续减小，例如，α＝0.36、0.24或0.15时，扬声器100的谐振频率增加，谐振频率之后的频率范围的输出声压级进一步提。因此，在一些实施例中，α的取值范围为α≤0.65。优选地，α的取值范围为α≤0.36。
在一些实施例中，为了调节扬声器100的谐振频率以及振动模态，扬声器100还可以包括质量块130，质量块130用于调整振膜111的质量及刚度，使得扬声器100的输出声压级得到提升。
振膜111或驱动结构112具有长轴方向与短轴方向，其中，长轴方向是指沿长轴(参见图5所示x轴)延伸的方向，短轴方向是指沿短轴(参见图5所示y轴)延伸的方向。
在一些实施例中，质量块130可以沿长轴方向设置，在长轴方向上，质量块130的尺寸等于或小于压电驱动结构1125的尺寸。在一些实施例中，质量块130沿长轴方向的尺寸(简称为长轴尺寸)与压电驱动结构1125的长轴尺寸的比值范围为小于等于1。在一些实施例中，质量块130可以沿短轴方向设置，在短轴方向上，质量块130的尺寸等于或小于压电驱动结构1125的尺寸。在一些实施例中，质量块130沿短轴方向的尺寸(简称为短轴尺寸)与压电驱动结构1125的短轴尺寸的比值范围为小于等于1。
图18是说明书一些实施例所示的质量块的设置示意图。
如图18所示，质量块130设置于发声单元110上，且沿长轴方向设置。在一些实施例中，质量块130设置在压电驱动结构1125上。在一些实施例中，质量块130位于或近似位于压电驱动结构1125的短轴处。
图19A为无质量块设置的振膜的变形云图。如图19A所示，在长轴方向上靠近壳体120的振膜111非压电覆盖区域会产生局部凹陷变形，与振膜111的其他区域变形方向相反，从而减小振膜111整体推动空气体积，进而减小扬声器100输出声压级。
图19B为设置质量块的振膜的变形云图。如图19B所示，通过沿长轴方向设置质量块130，可以使得在长轴方向上靠近壳体120的振膜111非压电覆盖区域一起被带着运动，与振膜111其他地方的变形保持一致。
图20是说明书一些实施例所示的质量块的设置示意图。
如图20所示，质量块130设置于发声单元110上，且沿短轴方向设置。在一些实施例中，质量块130设置在压电驱动结构1125上。在一些实施例中，质量块130位于或近似位于压电驱动结构 1125的长轴处。
图21A为无质量块设置的振膜的变形云图。如图21A所示，在长轴方向上靠近壳体120的振膜111非压电覆盖区域会产生局部凹陷变形，与振膜111的其他区域变形方向相反，从而减小振膜111整体推动空气体积，进而减小扬声器100输出声压级。
图21B为设置质量块的振膜的变形云图。如图21B所示，通过沿短轴方向设置质量块130，虽然无法改善在长轴方向上靠近壳体120的振膜111非压电覆盖区域的凹陷，但使得扬声器100发声单元110的中心部分最大位移由绝对值15um增加至20um，非压电覆盖区域的凹陷区域与中心部分相反方向位移的绝对值由30um减小至25um，可减小中心部分与非压电覆盖区域的凹陷区域相反方向位移导致的声音相互抵消量，进而可以有效增加整体推动空气量，进而增加输出声压级。
图22是说明书一些实施例所示的质量块的设置示意图。
如图20所示，质量块130设置于发声单元110上，质量块130在长轴方向及短轴方向上均具有一定尺寸，使得质量块130沿长轴、沿短轴方向设置。在一些实施例中，质量块130设置在压电驱动结构1125上。在一些实施例中，质量块130位于或近似位于压电驱动结构1125的中间区域。在一些实施例中，质量块130的长轴尺寸等于或小于压电驱动结构1125的长轴尺寸，且质量块130的短轴尺寸等于或小于压电驱动结构1125的短轴尺寸。
图23A为无质量块设置的振膜的变形云图。如图23A所示，在长轴方向上靠近壳体120的振膜111非压电覆盖区域会产生局部凹陷变形，与振膜111的其他区域变形方向相反，从而减小振膜111整体推动空气体积，进而减小扬声器100输出声压级。
图23B为设置质量块的振膜的变形云图。如图23B所示，通过沿长轴、短轴方向设置质量块130，可以使得在长轴方向上靠近壳体120的振膜111非压电覆盖区域一起被带着运动，与振膜111其他地方的变形保持一致，同时使得扬声器100发声单元110的最大位移量增大，可以有效增加整体推动空气量，进而增加输出声压级。
图24A是根据本说明书一些实施例所示的叠层(10层)扬声器的结构示意图；图24B是根据本说明书一些实施例所示的叠层扬声器与单层扬声器的频响曲线图。
本说明书一些实施例以10个(层)发声单元110所构成的叠层扬声器为例，与单层扬声器在相同条件(如，材料相同、结构尺寸相同等)下进行对比。如图24A所示，前壳体1201与其相邻的第一发声单元1101之间形成的第一声学腔体1221在第一方向上的高度表示为hq1，与第一声学腔体1221耦合的第一出声孔1211在第一方向上的高度表示为hk1；两个相邻的发声单元110(如第i-1个发声单元110i-1与第i个发声单元110i)之间形成的第三声学腔体1223在第一方向上的高度表示为hqi，与第三声学腔体1223耦合的第i出声孔121i在第一方向上的高度表示为hki；后壳体1202与其相邻的第n发声单元110n之间形成的第二声学腔体1222在第一方向上的高度表示为hqn+1，以及与第二声学腔体1222耦合的第n+1出声孔121(n+1)在第一方向上的高度表示为hkn+1。其中，i为大于1，小于n的整数。
如图24B所示，SP10表示叠层(10层)扬声器的输出声压级；SP1为单层扬声器的输出声压级。当hqi＝300um、hq1＝hqn+1＝150um，hki＝100um、hk1＝hkn+1＝50um时，在相同频率下，叠层扬声器的输出声压级(图24B中所示的SP10)约为60dB，而单层扬声器的输出声压级(图24B中所示的SP1)约为40dB，由此可见，叠层扬声器的输出声压级相比单层扬声器的输出声压级增加了约20dB(20dB＝20×log10(10))。进一步说明，当hqi＝300um、hq1＝hqn+1＝150um，hki＝100um、hk1＝hkn+1＝50um时，叠层扬声器并未由于声学腔体122以及与声学腔体122耦合的出声孔121的高度较小，而导致其输出声压级降低。
可以理解地，当声学腔体122以及与声学腔体122耦合的出声孔121的高度一定时，在保证扬声器100的结构强度不受影响的情况下，出声孔121在与第一方向垂直的方向上的宽度越大，即出声孔121的面积越大，其声阻越小，输出声压级会越大。因此，叠层扬声器中的声学腔体122以及与声学腔体122耦合的出声孔121在第一方向上的高度优选为hqi≥300um、hq1≥150um、hqn+1≥150um，hki≥100um、hk1≥50um、hkn+1≥50um。
图25是根据本说明书一些实施例所示的声学输出装置的示例性示意图；图26A是根据本说明书另一些实施例所示的声学输出装置的示例性示意图一；图26B是根据本说明书一些实施例所示的声学输出装置的示例性示意图二；图27是根据本说明书又一些实施例所示的声学输出装置的示例性示意图；图28是根据本说明书一些实施例所示的声学输出装置的频响曲线图。
在一些实施例中，本说明书提供了一种声学输出装置，包括：低频单元与高频单元，该低频单元包括图1A-图24B及其相关内容所描述的扬声器100。
在一些实施例中，声学输出装置200可以包括后挂式耳机、耳挂式耳机、入耳式耳机、眼镜中 的一种或多种。
在一些实施例中，声学输出装置200可以包括至少一个低频单元与至少一个高频单元。如图25所示，对于开放双耳的耳机，可以在两侧耳机上各自设置一个低频单元与高频单元。
如图26B所示，对于开放双耳的音频眼镜，可以在两侧镜腿上各自设置两个低频单元与一个高频单元，以提升低频时的输出声压级。
如图28所示，SPd为低频单元，SPq为高频单元，SPh为分频组合后的声学输出装置200，虚线表示分频线L(即SPd与SPq的频响曲线的交点对应的频率所在直线)。在一些实施例中，低频单元和高频单元的频响曲线的交点在300Hz-1000Hz范围内，即分频线L在300Hz-1000Hz范围内。
低频单元是指在声学输出装置200中，能够在低频段实现较好声压级输出的结构单元。在一些实施例中，低频单元包括但不限于气导压电叠层扬声器(例如扬声器100)等。
在一些实施例中，低频单元可以在以分频线L为上边界的第一频率范围内工作。即，第一频率范围的上边界位于300Hz-1000Hz的范围内。在一些实施例中，第一频率范围的上边界也可以位于其他合适的范围内。例如，第一频率范围的上边界位于300Hz-1500Hz等。在一些实施例中，第一频率范围可以称为低频段。
在一些实施例中，由于气导压电叠层扬声器(例如扬声器100)在低频段能够输出较大的声压级，为了更好地实现更为饱满的低频效果，可以在低频段采用气导压电叠层扬声器(例如扬声器100)。
高频单元是指在声学输出装置200中，能够在高频段实现较好声压级输出的结构单元。在一些实施例中，高频单元可以包括气导扬声器和/或骨导扬声器。
在一些实施例中，高频单元可以至少在以分频线L为下边界的第二频率范围内工作。在一些实施例中，第二频率范围可以称为高频段。如图25-图28所示，当高频单元为骨导扬声器时，由于骨导扬声器在高频段能够输出较大的声压级，而在低频段略显不足，因此为了实现全频段声音饱满的效果，声学输出装置200可以采用骨导扬声器与气导压电叠层扬声器(例如扬声器100)结合使用的方法，以使骨导扬声器分管高频段，而气导压电叠层扬声器(例如扬声器100)分管低频段。当然，在一些实施例中，骨导扬声器除了在高频段工作外，也可以在低频段工作，以进一步提升低频效果。此时，在低频段中，气导压电叠层扬声器(例如扬声器100)的输出占主导。
如图25-图27所示，声学输出装置200的高频单元也可以采用气导扬声器，此时声学输出装置既可以采用分频设计，也可以不采用分频设计，即气导扬声器(高频单元)可以仅在高频段(第二频率范围)工作，也可以同时在低频段与高频段工作。此时，在低频段气导扬声器与气导压电叠层扬声器(例如扬声器100)的输出叠加，以进一步提升低频效果。
在一些实施例中，声学输出装置200具有与第一方向平行的高度方向以及与第一方向垂直的厚度方向。其中，低频单元与高频单元在高度方向上平行设置，低频单元位于高频单元下侧；或者，低频单元与高频单元在厚度方向上平行设置，高频单元设置于声学输出装置200靠近用户的一侧。
其中，与第一方向平行的高度方向可以理解为与声学输出装置200靠近用户的前端面平行的方向；与第一方向垂直的厚度方向可以理解为与声学输出装置200靠近用户的前端面垂直的方向。
本说明书一些实施例，通过将高频单元设置于声学输出装置200靠近用户的一侧，当高频单元采用骨导扬声器100时，可以更有利于声音的传递，以提高用户体验。
如图25-图27所示，高频单元与设置在声学输出装置200的第一孔部201声学耦合，低频单元与设置在声学输出装置200的第二孔部202声学耦合，第一孔部201与第二孔部202均朝向用户设置，以使声音更好地输出至用户。其中，第一孔部201与第二孔部202为相同孔或不同孔。
如图25所示，当声学输出装置200的高频单元采用骨导扬声器100SPg时，此时可以无需设置与高频单元声学耦合的第一孔部201。
在一些实施例中，第一孔部201与第二孔部202为相同孔可以理解为第一孔部201与第二孔部202是高频单元、低频单元共用的出声的孔部；第一孔部201与第二孔部202为不同孔可以理解为第一孔部201与第二孔部202是独立设置的出声的孔部。通过分别设置与高频单元、低频单元声学耦合的第一孔部201、第二孔部202，可以使高频单元与低频单元的腔体隔离，有利于提高声音传递效果。
在一些实施例中，声学输出装置200可以包括多个出声的孔部。例如，声学输出装置200可以包括与高频单元声学耦合的一个第一孔部201，以及与低频单元声学耦合的两个第二孔部202，或是，包括与高频单元声学耦合的两个第一孔部201，以及与低频单元声学耦合的一个第二孔部202(如图27所示)；又例如，声学输出装置200既可以包括分别与高频单元、低频单元声学耦合的独立设置的第一孔部201、第二孔部202，又可以包括高频单元与低频单元或两个低频单元共用的出声的孔部，称之为第三孔部203(如图26A-图26B所示)。
本说明书实施例可能带来的有益效果包括但不限于：1)基于多个发声单元中相邻且共用多个 声学腔体中至少一个声学腔体的两个发声单元在至少部分低频段朝着相反方向振动，配合本说明书一些实施例所示的出声孔的设计，可以使具有n个发声单元的扬声器(叠层扬声器)输出的声压级相较于仅有一个发声单元的扬声器(单层扬声器)输出的声压级增加20×log10(n)倍；2)由于压电式的扬声器的厚度较薄，通过在第一方向(厚度方向)间隔布置多个压电式的发声单元，可以在满足扬声器的设计尺寸较小的同时，获得较大的低频输出；3)在第一方向上灵活调节发声单元的数量，可以使扬声器能够适用于更多的使用场景之中，使其具有广泛的适用性与实用性；4)通过在发声单元上的沿发声单元长轴方向或短轴方向设置的质量块，可以调整振膜的质量及刚度，调节振膜振动时的形变，从而改善扬声器的输出声压级；5)通过对施加在第一压电层、第二压电层的电压进行限制，可以使扬声器能够更加符合常用耳机、音频眼镜等消费电子产品的电池供电能力与功耗，使扬声器的实用性更强。
上文已对基本概念做了描述，显然，对于本领域技术人员来说，上述详细披露仅仅作为示例，而并不构成对本说明书的限定。虽然此处并没有明确说明，本领域技术人员可能会对本说明书进行各种修改、改进和修正。该类修改、改进和修正在本说明书中被建议，所以该类修改、改进、修正仍属于本说明书示范实施例的精神和范围。
同时，本说明书使用了特定词语来描述本说明书的实施例。如“一个实施例”、“一实施例”、和/或“一些实施例”意指与本说明书至少一个实施例相关的某一特征、结构或特点。因此，应强调并注意的是，本说明书中在不同位置两次或多次提及的“一实施例”或“一个实施例”或“一个替代性实施例”并不一定是指同一实施例。此外，本说明书的一个或多个实施例中的某些特征、结构或特点可以进行适当的组合。
同理，应当注意的是，为了简化本说明书披露的表述，从而帮助对一个或多个发明实施例的理解，前文对本说明书实施例的描述中，有时会将多种特征归并至一个实施例、附图或对其的描述中。但是，这种披露方法并不意味着本说明书对象所需要的特征比权利要求中提及的特征多。实际上，实施例的特征要少于上述披露的单个实施例的全部特征。
一些实施例中使用了描述成分、属性数量的数字，应当理解的是，此类用于实施例描述的数字，在一些示例中使用了修饰词“大约”、“近似”或“大体上”来修饰。除非另外说明，“大约”、“近似”或“大体上”表明数字允许有±20％的变化。相应地，在一些实施例中，说明书和权利要求中使用的数值参数均为近似值，该近似值根据个别实施例所需特点可以发生改变。在一些实施例中，数值参数应考虑规定的有效数位并采用一般位数保留的方法。尽管本说明书一些实施例中用于确认其范围广度的数值域和参数为近似值，在具体实施例中，此类数值的设定在可行范围内尽可能精确。
最后，应当理解的是，本说明书中实施例仅用以说明本说明书实施例的原则。其他的变形也可能属于本说明书的范围。因此，作为示例而非限制，本说明书实施例的替代配置可视为与本说明书的教导一致。相应地，本说明书的实施例不仅限于本说明书明确介绍和描述的实施例。

Claims (29)

  1. 一种扬声器，包括：
    沿第一方向间隔布置的多个发声单元，所述多个发声单元均沿所述第一方向振动；
    壳体，被配置为容纳并支撑所述多个发声单元，所述壳体上设置有多个出声孔，所述壳体与所述多个发声单元围成多个声学腔体，每个声学腔体与所述壳体上至少一个出声孔声学耦合，其中，
    所述多个发声单元均包括振膜以及设置在所述振膜上的驱动结构。
  2. 如权利要求1所述的扬声器，其中，所述驱动结构包括压电驱动结构，所述壳体包括多个固定环，每个固定环固定一个发声单元的振膜。
  3. 如权利要求2所述的扬声器，其中，所述压电驱动结构通过弹性结构与所述固定环相连，所述弹性结构相对于所述压电驱动结构的长轴或短轴对称。
  4. 如权利要求2所述的扬声器，其中，所述振膜上设置有引线，所述压电驱动结构与所述引线连接。
  5. 如权利要求1所述的扬声器，其中，所述驱动结构包括平面线圈。
  6. 如权利要求5所述的扬声器，其中，所述扬声器还包括设置在所述壳体内的磁体，所述磁体设置在所述振膜背离所述平面线圈的一侧。
  7. 如权利要求5所述的扬声器，其中，所述扬声器还包括设置在所述壳体内的磁体，在所述第一方向上，所述振膜的两侧分别设置有所述磁体，所述平面线圈位于两个所述磁体之间。
  8. 如权利要求5所述的扬声器，其中，所述扬声器还包括设置在所述壳体内的磁体，所述磁体包括分离式磁体，所述分离式磁体与所述平面线圈在所述第一方向的投影区域至少部分重叠。
  9. 如权利要求1所述的扬声器，其中，所述壳体包括多个固定环，每个固定环固定一个发声单元，每个所述固定环的周侧开设有两个出声孔，所述两个出声孔分别与所述发声单元相反两侧的声学腔体耦合。
  10. 如权利要求9所述的扬声器，其中，所述壳体包括前壳体与后壳体，所述前壳体与其相邻的发声单元之间形成第一声学腔体，所述后壳体与其相邻的另一发声单元形成第二声学腔体，两个相邻的发声单元之间形成第三声学腔体，所述第一声学腔体和/或所述第二声学腔体沿所述第一方向的厚度小于所述第三声学腔体沿所述第一方向的厚度。
  11. 如权利要求10所述的扬声器，其中，所述第一声学腔体与所述第二声学腔体在所述第一方向上的高度大于等于150um，所述第三声学腔体在所述第一方向上的高度大于等于300um，所述第一声学腔体与所述第二声学腔体对应的出声孔在所述第一方向上的高度大于等于50um，所述第三声学腔体对应的出声孔在所述第一方向上的高度大于等于100um。
  12. 如权利要求9所述的扬声器，其中，所述壳体包括前壳体与后壳体，每个所述固定环上设置有至少两个电极，每个所述固定环上的所述至少两个电极分别通过对应的导通电极连接至所述前壳体或所述后壳体。
  13. 如权利要求2所述的扬声器，其中，所述压电驱动结构包括压电材料，所述压电材料的杨氏模量为30GPa-100GPa。
  14. 如权利要求13所述的扬声器，其中，所述压电驱动结构包括烧结压电陶瓷，所述发声单元的中性层位于所述压电驱动结构内。
  15. 如权利要求14所述的扬声器，其中，所述压电驱动结构包括第一压电层、第二压电层、第一电极层、第二电极层与第三电极层，在所述第一方向上，所述第一电极层、所述第一压电层、所述第二电极层、所述第二压电层、所述第三电极层依次排列；
    所述第一压电层与所述第二压电层的极化方向相同，所述第一电极层的第一电压以及所述第三电 极层的第三电压均大于或均小于所述第二电极层的第二电压。
  16. 如权利要求14所述的扬声器，其中，所述压电驱动结构包括第一压电层、第二压电层、第一电极层、第二电极层与第三电极层，在所述第一方向上，所述第一电极层、所述第一压电层、所述第二电极层、所述第二压电层、所述第三电极层依次排列；
    所述第一压电层与所述第二压电层的极化方向相反，所述第一电极层的第一电压、所述第二电极层的第二电压、所述第三电极层的第三电压依次减小或依次增大。
  17. 如权利要求13所述的扬声器，其中，所述压电驱动结构包括MEMS压电陶瓷，所述发声单元的中性层位于所述压电驱动结构外。
  18. 如权利要求17所述的扬声器，其中，所述压电驱动结构包括第一压电层、第二压电层、第一电极层、第二电极层与第三电极层，在所述第一方向上，所述第一电极层、所述第一压电层、所述第二电极层、所述第二压电层、所述第三电极层依次排列；
    所述第一压电层与所述第二压电层的极化方向相反，所述第一电极层的第一电压以及所述第三电极层的第三电压均大于或均小于所述第二电极层的第二电压。
  19. 如权利要求17所述的扬声器，其中，所述压电驱动结构包括第一压电层、第二压电层、第一电极层、第二电极层与第三电极层，在所述第一方向上，所述第一电极层、所述第一压电层、所述第二电极层、所述第二压电层、所述第三电极层依次排列；
    所述第一压电层与所述第二压电层的极化方向相同，所述第一电极层的第一电压、所述第二电极层的第二电压、所述第三电极层的第三电压依次减小或依次增大。
  20. 如权利要求15、16、18、19中任一项所述的扬声器，其中，所述第一压电层的第一驱动电压为所述第一电压与所述第二电压之差，所述第二压电层的第二驱动电压为所述第二电压与所述第三电压之差，所述第一驱动电压的绝对值与所述第二驱动电压的绝对值均不高于5V。
  21. 如权利要求14所述的扬声器，其中，所述振膜上包括压电覆盖区域与非压电覆盖区域，所述压电覆盖区域的第一面积与所述发声单元的悬空面积的比值大于或等于0.4。
  22. 如权利要求17所述的扬声器，其中，所述振膜上包括压电覆盖区域与非压电覆盖区域，所述非压电覆盖区域的第二面积与所述发声单元的悬空面积的比值小于0.65。
  23. 如权利要求1所述的扬声器，其中，所述振膜或所述驱动结构具有长轴方向与短轴方向，所述发声单元还包括沿所述长轴方向或所述短轴方向设置的质量块，在所述长轴方向或所述短轴方向上，所述质量块的尺寸小于所述压电驱动结构的尺寸。
  24. 一种声学输出装置，包括：低频单元与高频单元，所述低频单元包括如权利要求1-22任一项所述的扬声器，其中，
    所述低频单元与所述高频单元的频响曲线的交点在300Hz-1000Hz的范围内。
  25. 如权利要求24所述的声学输出装置，其中，所述高频单元包括气导扬声器和/或骨导扬声器。
  26. 如权利要求24所述的声学输出装置，其中，所述高频单元至少在以所述交点为下边界的频率范围内工作。
  27. 如权利要求24所述的声学输出装置，其中，所述声学输出装置具有与所述第一方向平行的高度方向以及与所述第一方向垂直的厚度方向，其中，
    所述低频单元与所述高频单元在所述高度方向上平行设置，所述低频单元位于所述高频单元下侧；
    或者，所述低频单元与所述高频单元在所述厚度方向上平行设置，所述高频单元设置于所述声学输出装置靠近用户的一侧。
  28. 如权利要求27所述的声学输出装置，其中，所述高频单元与设置在所述声学输出装置的第一 孔部声学耦合，所述低频单元与设置在所述声学输出装置的第二孔部声学耦合，所述第一孔部与所述第二孔部均朝向所述用户设置，其中，
    所述第一孔部与所述第二孔部为相同孔或不同孔。
  29. 如权利要求24-28任一项所述的声学输出装置，其中，所述声学输出装置至少包括后挂式耳机、耳挂式耳机、入耳式耳机、眼镜中的一种。
PCT/CN2023/107256 2023-07-13 2023-07-13 一种扬声器 Ceased WO2025010726A1 (zh)

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PCT/CN2023/107256 WO2025010726A1 (zh) 2023-07-13 2023-07-13 一种扬声器
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