WO2025091894A1 - 一种可调控的底部填充胶、其制备方法及芯片封装结构 - Google Patents

一种可调控的底部填充胶、其制备方法及芯片封装结构 Download PDF

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Publication number
WO2025091894A1
WO2025091894A1 PCT/CN2024/096689 CN2024096689W WO2025091894A1 WO 2025091894 A1 WO2025091894 A1 WO 2025091894A1 CN 2024096689 W CN2024096689 W CN 2024096689W WO 2025091894 A1 WO2025091894 A1 WO 2025091894A1
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bottom filling
filling glue
epoxy resin
chip
silane coupling
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English (en)
French (fr)
Inventor
伍得
曹东萍
廖述杭
苏峻兴
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Wuhan Choice Technology Co Ltd
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Wuhan Choice Technology Co Ltd
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Priority to EP24866647.1A priority Critical patent/EP4585662A4/en
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00—Encapsulations, e.g. protective coatings
    • H10W74/40—Encapsulations, e.g. protective coatings characterised by their materials
    • H10W74/47—Encapsulations, e.g. protective coatings characterised by their materials comprising organic materials, e.g. plastics or resins
    • H10W74/476—Organic materials comprising silicon
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G59/00—Polycondensates containing more than one epoxy group per molecule; Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups
    • C08G59/18—Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups ; e.g. general methods of curing
    • C08G59/20—Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups ; e.g. general methods of curing characterised by the epoxy compounds used
    • C08G59/32—Epoxy compounds containing three or more epoxy groups
    • C08G59/3218—Carbocyclic compounds
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00—Encapsulations, e.g. protective coatings
    • H10W74/01—Manufacture or treatment
    • H10W74/012—Manufacture or treatment of encapsulations on active surfaces of flip-chip devices, e.g. forming underfills
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00—Encapsulations, e.g. protective coatings
    • H10W74/10—Encapsulations, e.g. protective coatings characterised by their shape or disposition
    • H10W74/15—Encapsulations, e.g. protective coatings characterised by their shape or disposition on active surfaces of flip-chip devices, e.g. underfills

Definitions

  • the invention belongs to the technical field of bottom filling glue packaging, and in particular relates to an adjustable bottom filling glue, a preparation method thereof and a chip packaging structure.
  • Underfill is a material suitable for flip chip underfill technology. It usually uses the principle of capillary action to penetrate into the gap between the chip and the substrate, and then gradually solidifies and fills the gap between the chip and the substrate through thermal curing to protect the high-density solder bumps between the chip and the substrate and the chip.
  • the adhesion between the underfill material formed after the existing underfill is cured and the chip, substrate and solder bumps is not strong enough, the linear thermal expansion coefficient is too high, and the glass transition temperature is not enough.
  • the underfill material often cracks or peels off from the chip, substrate and/or solder bumps, and can no longer protect the chip, causing the chip to be damaged.
  • Glass transition temperature (Tg) is one of the key properties of materials. It is the temperature corresponding to the transition of materials from glassy state to highly elastic state, and is the lowest temperature at which molecular chains can move. In the use of adhesive materials, if the glass transition temperature is too low or too high, it will affect the use and processing temperature of the adhesive materials. Controlling the glass transition temperature between 90 and 180°C is of great significance to the use and processing of adhesive materials.
  • the object of the present invention is to provide an adjustable bottom filling glue, a preparation method thereof and a chip packaging structure, so as to solve at least one of the above technical problems.
  • the first aspect of the present invention provides an adjustable bottom filling glue, which comprises the following components by mass percentage: 21%-28% of trifunctional epoxy resin, 8%-19% of amine curing agent, 54%-66% of filler, 0.2%-0.4% of accelerator, 0.1%-0.3% of silane coupling agent, Carbon black 0.1%-0.2%; the molar ratio of the trifunctional epoxy resin to the amine curing agent is 1:0.7-1:1.4.
  • the trifunctional epoxy resin has the structural formula:
  • the amine curing agent includes at least one of triethylenetetramine, diethyltoluenediamine and meta-phenylenediamine.
  • the filler comprises silicon dioxide; the average particle size of the silicon dioxide is 0.6 ⁇ m-3 ⁇ m.
  • the accelerator comprises an imidazole accelerator.
  • the silane coupling agent includes at least one of ⁇ -aminopropyltrimethoxysilane and ⁇ -aminopropyltriethoxysilane.
  • the second aspect of the present invention provides a method for preparing an adjustable bottom filling glue as described in the first aspect, the preparation method comprising: S1: stirring and mixing the components according to their respective mass percentages to obtain a first slurry, the mass percentages of the components specifically comprising: 21%-28% of a trifunctional epoxy resin, 8%-19% of an amine curing agent, 54%-66% of a filler, 0.2%-0.4% of an accelerator, 0.1%-0.3% of a silane coupling agent, and 0.1%-0.2% of carbon black; S2: transferring the first slurry to a three-roll grinder for dispersion treatment to obtain a uniformly dispersed second slurry; S3: vacuum degassing the second slurry to obtain a bottom filling glue.
  • the molar ratio of the trifunctional epoxy resin to the amine curing agent is 1:0.7-1:1.4.
  • the third aspect of the present invention provides a chip packaging structure, including a substrate, a chip arranged on the substrate, and a plurality of spaced solder bumps arranged between the substrate and the chip and electrically connected to the substrate and the chip, a gap is formed between the substrate and the chip, and the adjustable bottom filling glue as described in the first aspect is arranged at the edge of the substrate so that the bottom filling glue flows from one end of the gap to the other end of the gap by capillary action to fill the gap; the bottom filling glue is cured at a curing temperature of 165°C and a curing time of 2 hours; after the curing is completed, a chip packaging structure is obtained.
  • the adjustable bottom filling glue provided by the present invention comprises the following components by mass percentage: 21%-28% of trifunctional epoxy resin, 8%-19% of amine curing agent, 54%-66% of filler, 0.2%-0.4% of accelerator, 0.1%-0.3% of silane coupling agent, and 0.1%-0.2% of carbon black; the molar ratio of the trifunctional epoxy resin to the amine curing agent is 1:0.7-1:1.4; when the molar ratio of the trifunctional epoxy resin to the amine curing agent is equal to 1:1, the epoxy group and the amino group react completely, and the cross-linked close bond of the formed thermosetting resin is formed.
  • the glass transition temperature reaches the maximum value.
  • the glass transition temperature of the bottom filling glue can be controlled between 90-180°C.
  • the introduction of silane coupling agent improves the bonding degree between the filler and the thermosetting epoxy resin, thereby improving the stability of the bottom filling glue, and can form an organic matrix-silane coupling agent-inorganic matrix bonding layer between the inorganic interface and the organic interface, thereby improving the bonding strength of the bottom filling glue, thereby enhancing the protection effect on the chip.
  • FIG. 1 is a flow chart of a method for preparing an adjustable bottom filling adhesive according to the present application.
  • the present application provides an adjustable bottom filling glue, which includes the following components by mass percentage: 21%-28% of trifunctional epoxy resin, 8%-19% of amine curing agent, 54%-66% of filler, 0.2%-0.4% of accelerator, 0.1%-0.3% of silane coupling agent, and 0.1%-0.2% of carbon black; the molar ratio of the trifunctional epoxy resin to the amine curing agent is 1:0.7-1:1.4.
  • the adjustable bottom filling glue provided by the present invention comprises the following components by mass percentage: 21%-28% of trifunctional epoxy resin, 8%-19% of amine curing agent, 54%-66% of filler, 0.2%-0.4% of accelerator, 0.1%-0.3% of silane coupling agent, and 0.1%-0.2% of carbon black; the molar ratio of the trifunctional epoxy resin to the amine curing agent is 1:0.7-1:1.4; when the molar ratio of the trifunctional epoxy resin to the amine curing agent is equal to 1:1, the epoxy group and the amino group react completely, and the cross-linked close bond of the formed thermosetting resin is formed.
  • the glass transition temperature reaches the maximum value.
  • the glass transition temperature of the bottom filling glue can be controlled between 90-180°C.
  • the introduction of silane coupling agent improves the bonding degree between the filler and the thermosetting epoxy resin, thereby improving the stability of the bottom filling glue, and can form an organic matrix-silane coupling agent-inorganic matrix bonding layer between the inorganic interface and the organic interface, thereby improving the bonding strength of the bottom filling glue, thereby enhancing the protection effect on the chip.
  • the trifunctional epoxy resin has the structural formula:
  • the trifunctional group can provide adhesive properties and mechanical properties for the bottom filler.
  • Trifunctional epoxy resins can be purchased on the market, such as Jining Fangyu Chemical TDE-85 (epoxy equivalent 100-125g/eq) and Guangzhou Yihuisheng Chemical Co., Ltd. CY-186 (epoxy equivalent 100-110g/eq).
  • the amine curing agent includes at least one of triethylenetetramine, diethyltoluenediamine and meta-phenylenediamine.
  • the amine curing agent reacts with the trifunctional epoxy resin under the action of a certain temperature and an accelerator, and the curing reaction generates a thermosetting compound with a three-dimensional network structure.
  • the amine curing agent can be any one of triethylenetetramine (active hydrogen equivalent is 48g/eq), diethyltoluenediamine (active hydrogen equivalent is 45g/eq), and m-phenylenediamine (active hydrogen equivalent is 27g/eq).
  • the epoxy resin: curing agent molar ratio is greater than 1:1, the epoxy groups are excessive and the concentration of the amine groups is low.
  • the amine-epoxy groups undergo condensation during the curing process. After the condensation reaction is completed, there are still excess epoxy groups that do not participate in the reaction.
  • the cross-linking density is lower than that when the reaction is complete, which makes the Tg of the cured product smaller.
  • the heat released during the curing process is low and cannot reach the temperature required for the homopolymerization of the remaining epoxy groups. Therefore, the excess epoxy groups do not participate in the reaction, and the final Tg is smaller.
  • the epoxy resin: curing agent molar ratio is less than 1:1
  • the amine groups are excessive and the concentration of amine groups is high.
  • the amine-epoxy groups condense during the curing process, and the heat released during the curing process is high, reaching the temperature required for the homopolymerization of the epoxy resin groups.
  • a part of the epoxy groups undergo homopolymerization, which reduces the crosslinking density, lengthens the chain segments, and finally reduces the Tg.
  • the present application controls the glass transition temperature of the bottom filling glue by controlling the molar ratio of the trifunctional epoxy resin and the amine curing agent.
  • the filler includes silicon dioxide; the average particle size of the silicon dioxide is 0.6 ⁇ m-3 ⁇ m.
  • silicon dioxide can reduce the thermal expansion coefficient of the cured product and change the material modulus.
  • the accelerator includes an imidazole accelerator.
  • the accelerator can accelerate the reaction rate of the trifunctional epoxy resin and the amine curing agent, reduce the curing time, and improve the production efficiency;
  • the accelerator can be an imidazole accelerator, preferably, the imidazole accelerator can be at least one of 4-methyl-2-phenylimidazole and 2-ethyl-4-methylimidazole.
  • the silane coupling agent includes at least one of ⁇ -aminopropyltrimethoxysilane and ⁇ -aminopropyltriethoxysilane.
  • the Silane coupling agent can promote the connection between the bottom filling glue and the substrate, SiO2 or Si3N4 passivation layer on the chip surface, and improve the bonding strength and stability between the bottom filling glue and the substrate surface.
  • the silane coupling agent includes at least one of ⁇ -aminopropyl trimethoxysilane and ⁇ -aminopropyl triethoxysilane, which has an active primary amino functional group and three hydrolyzable methoxy or ethoxy groups.
  • the primary amino functional group can react with an organic substance (epoxy group) to combine, and the methoxy or ethoxy group generates silanol when hydrolyzed, and combines with an inorganic substance to form siloxane.
  • This dual reactivity allows the silane coupling agent to improve the degree of bonding between the inorganic material (filler) and the organic polymer (thermosetting resin) through a two-way chemical reaction with the inorganic material (filler) and the organic polymer (thermosetting resin), thereby improving the stability of the bottom filling glue.
  • the mass percentage of the silicon dioxide is 60%-65%
  • the mass percentage of the imidazole accelerator is 0.2%
  • the mass percentage of the silane coupling agent is 0.2%
  • the mass percentage of the carbon black is 0.1%.
  • the present application also provides a method for preparing the above-mentioned adjustable bottom filling glue, as shown in FIG1 , the preparation method comprises:
  • S1 Stir and mix the components according to their respective mass percentages to obtain a first slurry
  • the mass percentage of each component specifically includes: trifunctional epoxy resin 21%-28%, amine curing agent 8%-19%, filler 54%-66%, accelerator 0.2%-0.4%, silane coupling agent 0.1%-0.3%, carbon black 0.1%-0.2%; wherein, the stirring time is 90-180s, the rotation speed is 1100r/min, and the revolution speed is 1450r/min;
  • the molar ratio of the trifunctional epoxy resin to the amine curing agent is 1:0.7-1:1.4.
  • the present application also provides a chip packaging structure, including a substrate, a chip disposed on the substrate, and a plurality of solder bumps disposed between the substrate and the chip and electrically connected to the substrate and the chip, wherein a gap is formed between the substrate and the chip:
  • the adjustable bottom filling glue liquid described in the first aspect is arranged at the edge of the substrate, so that the bottom filling glue liquid flows from one end of the gap to the other end of the gap by capillary action to fill the gap;
  • the bottom filling glue liquid is cured at a curing temperature of 165° C. and a curing time of 2 h;
  • Storage modulus Reference standard: ASTM E2254-2018, take a sample that is fully cured at 165°C for 2h, the size of the test sample is 55mm ⁇ 10mm ⁇ 2mm, and the measurement is carried out using DMA, measurement mode: dual cantilever mode, vibration frequency: 1Hz, amplitude: 10 ⁇ m, heating rate: 5°C/min; the storage modulus takes the value of 25°C-245°C.
  • Glass transition temperature Tg Reference standard: ASTM E2254-2018, take a sample that is fully cured at 165°C for 2h, the size of the test sample is 55mm ⁇ 10mm ⁇ 2mm, and DMA is used for measurement, measurement mode: dual cantilever mode, vibration frequency: 1Hz, amplitude: 10 ⁇ m, heating rate: 5°C/min.
  • Thermal expansion coefficient Reference standard: ASTM E831-2019, take a sample that is fully cured at 165°C for 2h, and prepare a test sample with a size of 5mm ⁇ 5mm ⁇ 2mm. Measured by TMA (compression mode) Thermal expansion coefficient of the test sample.
  • Reaction enthalpy change DSC instrument is used for testing, reference standard: GB/T 19466.3/ISO11357-3, take 5-10 mg sample (glue prepared by proportioning the above components), heating rate: 10°C/min, room temperature -250°C.
  • Viscosity growth rate measured using a digital rotational viscometer (14# rotor, 20r/min, room temperature)
  • Fluidity test method Stick the four corners of a 20mm ⁇ 20mm, 0.5mm thick square glass sheet on a glass slide with 50um thick double-sided tape, place it on a 90°C hot plate, preheat for three minutes, use a fine steel needle to apply the bottom filling glue to be tested horizontally along one edge of the square glass sheet, and start timing at the same time. Under the action of capillary force, the bottom filling glue will flow to the bottom of the glass sheet. Record the time when it flows to half the side length (10mm) and the time when it is full (20mm).
  • Comparative Example 1 the molar ratio of CY-186 to triethylenetetramine is greater than 1:1, the epoxy group is excessive, the concentration of the amine group is low, and the reaction heat is low, so there is excess CY-186 that does not react, and the final Tg is less than 90°C; no silane coupling agent is added, and the viscosity increases rapidly at room temperature for 24 hours, that is, the bottom filling glue prepared by the ratio of Comparative Example 1 is unstable; the glue liquid of the configured bottom filling glue is horizontally applied along one edge of the square glass sheet. Under the action of capillary force, the glue liquid flows at the bottom of the glass sheet. When it flows to 10 mm, it takes 126 seconds, and when it flows to 20 mm, it takes 580 seconds. It can be seen that the fluidity of this glue liquid is poor;
  • Example 1-3 the molar ratio of CY-186 to triethylenetetramine is greater than 1:1, the epoxy group is excessive, the concentration of the amine group is small, and the reaction heat is low, so there is excess CY-186 that does not react, but the molar ratio of CY-186 to triethylenetetramine is greater than that of Comparative Example 1, so Tg is between 90-180°C, and the silane coupling agent KH540 is added, and the viscosity growth rate at room temperature for 24 hours is within 100%, that is, the bottom filling glue prepared by the ratio of Example 1-3 has good stability; when the fluidity test is performed, it can be found that the flow-through time is greatly shortened, that is, the glue in Example 1-3 has good fluidity.
  • Example 4 the molar ratio of CY-186 to triethylenetetramine is equal to 1:1. At this time, the amine-epoxy reaction is complete, the crosslinking density is the largest, and the Tg reaches a maximum value of 180°C. In addition, the silane coupling agent KH540 is added, and the viscosity growth rate at room temperature for 24 hours is only 22.4%, which is the smallest among Examples 1-6. That is, when the molar ratio of CY-186 to triethylenetetramine is equal to 1:1, Tg reaches a maximum value of 180°C. The stability of the bottom filling glue prepared using the ratio of Example 4 is the best;
  • Example 5-6 the molar ratio of CY-186 to triethylenetetramine is less than 1:1, the amine group is excessive, the concentration of the amine group is relatively high, the amine group-epoxy group undergoes condensation during the curing process, and the heat released during the curing process is high, reaching the temperature required for the homopolymerization of the epoxy group. At the same time, a part of the epoxy group undergoes homopolymerization reaction, which makes the crosslinking density smaller, the chain segment longer, and the Tg smaller.
  • the molar ratio of CY-186 to triethylenetetramine in Example 5-6 is smaller than that in Comparative Example 2, so Tg is greater than that in Comparative Example 2; the molar ratio of CY-186 to triethylenetetramine in Example 5-6 is larger than that in Example 4, so Tg is less than that in Example 4, and silane coupling agent KH540 is added in Example 5-6, and the viscosity growth rate at room temperature for 24 hours is within 100%, that is, the bottom filling glue prepared by using the ratio of Example 5-6 has good stability;
  • the bottom filling glue prepared by the ratio in Examples 1-6 of the present application due to the addition of silane coupling agent, has good stability while controlling the Tg between 90-180°C, and the 24h viscosity growth rate at room temperature is also within 100%.
  • the flow extension time is greatly reduced, and it has excellent fluidity. That is, the present application provides a bottom filling glue that is controllable, highly stable and has excellent fluidity, which is beneficial to improving the protection effect of the chip.

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Abstract

本发明提供了一种可调控的底部填充胶、其制备方法及芯片封装结构，该底部填充胶按质量百分比计包括以下组分：三官能团环氧树脂21％-28％，胺类固化剂8％-19％，填充剂54％-66％，促进剂0.2％-0.4％，硅烷偶联剂0.1％-0.3％，炭黑0.1％-0.2％；所述三官能团环氧树脂和所述胺类固化剂的摩尔比为1:0.7-1:1.4；通过控制三官能团环氧树脂和胺类固化剂的摩尔比为1:0.7-1:1.4，可将底部填充胶的玻璃化转变温度控制在90-180℃之间，此外，引入硅烷偶联剂，提高了填充剂和热固性环氧树脂之间的结合程度，进而提高了底部填充胶的稳定性，并且可在无机界面和有机界面之间形成有机基体-硅烷偶联剂-无机基体的结合层，提高了底部填充胶的粘结强度，进而增强了对芯片的保护效果。

Description

一种可调控的底部填充胶、其制备方法及芯片封装结构 技术领域
本发明属于底部填充胶封装技术领域，特别涉及一种可调控的底部填充胶、其制备方法及芯片封装结构。
背景技术
底部填充胶是一种适用于倒装芯片底部填充技术的材料，通常是利用毛细作用原理渗透到芯片与基板之间的间隙中，再通过热固化逐渐凝固并填充在芯片与基板之间的间隙中，保护芯片与基板之间的高密度焊接凸点及芯片。然而，现有的底部填充胶固化后形成的底部填充材料与芯片、基板及焊接凸点之间的粘着力不够强，线性热膨胀系数过高以及玻璃化转变温度不够，经常会出现底部填充材料龟裂或从芯片、基板和/或焊接凸点上剥离的情况，而不能继续对芯片进行保护，使芯片受损。
玻璃化转变温度(Glass Transition Temperature，Tg)是材料的关键性能之一，是材料由玻璃态转变为高弹态所对应的温度，是分子链段能运动的最低温度。在胶材的使用过程中，玻璃化转变温度太低或太高均会影响胶材的使用和加工温度，将玻璃化转变温度控制在90至180℃之间，对胶材的使用和加工具有重要意义。
因此，如何提供一种可调控的底部填充胶，以增强对芯片的保护效果，是本领域技术人员亟需解决的技术问题。
发明内容
本发明的目的在于提供一种可调控的底部填充胶、其制备方法及芯片封装结构，以至少解决上述一种技术问题。
为实现上述目的，本发明第一方面提供了一种可调控的底部填充胶，所述底部填充胶按质量百分比计包括以下组分：三官能团环氧树脂21％-28％，胺类固化剂8％-19％，填充剂54％-66％，促进剂0.2％-0.4％，硅烷偶联剂0.1％-0.3％， 炭黑0.1％-0.2％；所述三官能团环氧树脂和所述胺类固化剂的摩尔比为1:0.7-1:1.4。
在第一方面中，所述三官能团环氧树脂的结构式为：
在第一方面中，所述胺类固化剂包括三乙烯四胺、二乙基甲苯二胺和间苯二胺中的至少一种。
在第一方面中，所述填充剂包括二氧化硅；所述二氧化硅的平均粒径为0.6μm-3μm。
在第一方面中，所述促进剂包括咪唑类促进剂。
在第一方面中，所述硅烷偶联剂包括γ-氨丙基三甲氧基硅烷和γ-氨丙基三乙氧基硅烷中的至少一种。
在第一方面中，所述二氧化硅的质量百分比为60％-65％，所述咪唑类促进剂的质量百分比为0.2％，所述硅烷偶联剂的质量百分比为0.2％，所述炭黑的质量百分比为0.1％。
本发明第二方面提供了一种如第一方面所述的可调控的底部填充胶的制备方法，所述制备方法包括：S1:将各组分按照各自的质量百分比进行搅拌混合，得到第一浆料，所述各组分的质量百分比具体包括：三官能团环氧树脂21％-28％，胺类固化剂8％-19％，填充剂54％-66％，促进剂0.2％-0.4％，硅烷偶联剂0.1％-0.3％，炭黑0.1％-0.2％；S2：将所述第一浆料转移至三辊研磨机进行分散处理，得到分散均匀的第二浆料；S3：将所述第二浆料进行真空脱泡，得到底部填充胶。
在第二方面中，所述三官能团环氧树脂和所述胺类固化剂的摩尔比为1:0.7-1:1.4。
本发明第三方面提供了一种芯片封装结构，包括基底、设置在基底上的芯片，及设置在基底与芯片之间并与基底及芯片电连接的多个间隔设置的焊接凸点，所述基底和所述芯片之间形成间隙，将如第一方面所述的可调控的底部填充胶的胶液设置在所述基底的边缘，使所述底部填充胶的胶液通过毛细作用从所述间隙的一端流向所述间隙的另一端，以填充所述间隙；对所述底部填充胶的胶液进行固化，固化温度为165℃，固化时间为2h；固化结束后，得到芯片封装结构。
有益效果：
本发明提供的可调控的底部填充胶按质量百分比计包括以下组分：三官能团环氧树脂21％-28％，胺类固化剂8％-19％，填充剂54％-66％，促进剂0.2％-0.4％，硅烷偶联剂0.1％-0.3％，炭黑0.1％-0.2％；所述三官能团环氧树脂和所述胺类固化剂的摩尔比为1:0.7-1:1.4；当三官能团环氧树脂与胺类固化剂的摩尔比等于1:1时，环氧基和氨基反应完全，形成的热固性树脂的交联密度最大，玻璃化转变温度达到最大值，通过控制三官能团环氧树脂和胺类固化剂的摩尔比为1:0.7-1:1.4，可将底部填充胶的玻璃化转变温度控制在90-180℃之间，此外，引入硅烷偶联剂，提高了填充剂和热固性环氧树脂之间的结合程度，进而提高了底部填充胶的稳定性，并且可在无机界面和有机界面之间形成有机基体-硅烷偶联剂-无机基体的结合层，提高了底部填充胶的粘结强度，进而增强了对芯片的保护效果。
附图说明
为了更清楚地说明本说明书实施例或现有技术中的技术方案，下面将对实施例中所需要使用的附图作简单地介绍，显而易见地，下面描述中的附图仅仅是本发明的一些实施例，对于本领域普通技术人员来讲，在不付出创造性劳动的前提下，还可以根据这些附图获得其他的附图。
图1为本申请一种可调控的底部填充胶的制备方法的流程图。
具体实施方式
下文将结合具体实施方式和实施例，具体阐述本发明，本发明的优点和各种效果将由此更加清楚地呈现。本领域技术人员应理解，这些具体实施方式和实施例是用于说明本发明，而非限制本发明。
在整个说明书中，除非另有特别说明，本文使用的术语应理解为如本领域中通常所使用的含义。因此，除非另有定义，本文使用的所有技术和科学术语具有与本发明所属领域技术人员的一般理解相同的含义。若存在矛盾，本说明书优先。
除非另有特别说明，本发明中用到的各种原材料、试剂、仪器和设备等，均可通过市场购买获得或者可通过现有方法获得。
本申请提供的一种可调控的底部填充胶，所述底部填充胶按质量百分比计包括以下组分：三官能团环氧树脂21％-28％，胺类固化剂8％-19％，填充剂54％-66％，促进剂0.2％-0.4％，硅烷偶联剂0.1％-0.3％，炭黑0.1％-0.2％；所述三官能团环氧树脂和所述胺类固化剂的摩尔比为1:0.7-1:1.4。
本发明提供的可调控的底部填充胶按质量百分比计包括以下组分：三官能团环氧树脂21％-28％，胺类固化剂8％-19％，填充剂54％-66％，促进剂0.2％-0.4％，硅烷偶联剂0.1％-0.3％，炭黑0.1％-0.2％；所述三官能团环氧树脂和所述胺类固化剂的摩尔比为1:0.7-1:1.4；当三官能团环氧树脂与胺类固化剂的摩尔比等于1:1时，环氧基和氨基反应完全，形成的热固性树脂的交联密度最大，玻璃化转变温度达到最大值，通过控制三官能团环氧树脂和胺类固化剂的摩尔比为1:0.7-1:1.4，可将底部填充胶的玻璃化转变温度控制在90-180℃之间，此外，引入硅烷偶联剂，提高了填充剂和热固性环氧树脂之间的结合程度，进而提高了底部填充胶的稳定性，并且可在无机界面和有机界面之间形成有机基体-硅烷偶联剂-无机基体的结合层，提高了底部填充胶的粘结强度，进而增强了对芯片的保护效果。
在一些可能的实施例中，所述三官能团环氧树脂的结构式为：
三官能团作为材料基体，可以为底部填充胶提供粘接性能和力学性能。三官能团环氧树脂可以通过市场购买方式获得，例如济宁方与化工TDE-85(环氧当量100-125g/eq)，广州亿珲盛化工有限公司CY-186(环氧当量100-110g/eq)。
在一些可能的实施例中，所述胺类固化剂包括三乙烯四胺、二乙基甲苯二胺和间苯二胺中的至少一种。
胺类固化剂在一定温度和促进剂的作用下与三官能团环氧树脂反应，固化反应生成立体网状结构的热固性化合物。胺类固化剂可以是三乙烯四胺(活泼氢当量为48g/eq)，二乙基甲苯二胺(活泼氢当量为45g/eq)，间苯二胺(活泼氢当量为27g/eq)中的任意一种。
胺类固化剂与三官能团环氧树脂的反应机理：
当环氧树脂：固化剂摩尔比大于1:1时，环氧基团过量，胺基的浓度较小，胺基-环氧基在固化过程中发生缩合，缩合反应完成后仍有多余的环氧基团未参与反应，交联密度较完全反应时更低，使得固化物Tg较小，且固化过程中释放的热量低，达不到剩余环氧基团均聚时所需的温度，因此多余的环氧基团未参与反应，最终Tg更小；
当环氧树脂：固化剂摩尔比等于1:1时，此时胺基-环氧反应完全，交联密度最大，Tg达到最大值；
当环氧树脂：固化剂摩尔比小于1:1时，胺基过量，胺基的浓度较大，胺基-环氧基在固化的过程中发生缩合，且固化过程中释放的热量高，到达了环氧树基团均聚所需的温度，与此同时，一部分环氧基团发生均聚反应，使得交联密度变小，链段变长，最终Tg更小；
基于此，本申请通过控制三官能团环氧树脂和胺类固化剂的摩尔比来实现对底部填充胶的玻璃化转变温度的控制。
在一些可能的实施例中，所述填充剂包括二氧化硅；所述二氧化硅的平均粒径为0.6μm-3μm。
二氧化硅作为无机填充剂，可以降低固化物的热膨胀系数，改变材料模量。
在一些可能的实施例中，所述促进剂包括咪唑类促进剂。
促进剂可以加快三官能团环氧树脂和胺类固化剂的反应速率，减少固化时间，提高生产效率；促进剂可以是咪唑类促进剂，优选地，咪唑类促进剂可是4-甲基-2-苯基咪唑和2-乙基-4-甲基咪唑中的至少一种。
在一些可能的实施例中，所述硅烷偶联剂包括γ-氨丙基三甲氧基硅烷和γ-氨丙基三乙氧基硅烷中的至少一种。
硅烷偶联剂可以促进底部填充胶与基底、芯片表面S iO2或S i3N4钝化层之间的连接，提高底部填充胶与基底表面的粘接强度和稳定性。本申请中，硅烷偶联剂包括γ-氨丙基三甲氧基硅烷和γ-氨丙基三乙氧基硅烷中的至少一种，具有一个活泼的伯氨官能团和三个可水解的甲氧基或乙氧基，伯氨官能团可以与有机物质(环氧基)反应而结合，甲氧基或乙氧基在水解时生成硅醇，与无机物质结合形成硅氧烷，这种双重反应活性使得硅烷偶联剂可以通过与无机材料(填充剂)和有机聚合物(热固性树脂)的双向化学反应而提高两者之间的结合程度，进而提高底部填充胶的稳定性。
在一些可能的实施例中，所述二氧化硅的质量百分比为60％-65％，所述咪唑类促进剂的百分比为0.2％，所述硅烷偶联剂的质量百分比0.2％，所述炭黑的质量百分比为0.1％。
基于一个总的发明构思，本申请还提供了一种如上述所述的可调控的底部填充胶的制备方法，请参阅图1所示，所述制备方法包括：
S1:将各组分按照各自的质量百分比进行搅拌混合，得到第一浆料，所述 各组分的质量百分比具体包括：三官能团环氧树脂21％-28％，胺类固化剂8％-19％，填充剂54％-66％，促进剂0.2％-0.4％，硅烷偶联剂0.1％-0.3％，炭黑0.1％-0.2％；其中，搅拌时间为90-180s，自转1100r/min，公转1450r/min；
S2：将所述第一浆料转移至三辊研磨机进行分散处理，得到分散均匀的第二浆料；其中，三辊研磨机中的入料间隙为20-45μm，出料间隙为10-25μm；
S3：将所述第二浆料进行真空脱泡，得到底部填充胶；其中，在离心搅拌机中进行真空脱泡，真空脱泡的时间为50-100s，自转1100r/min，公转1450r/min。
作为另一种可选的实施例，所述三官能团环氧树脂和所述胺类固化剂的摩尔比为1:0.7-1:1.4。
基于一个总的发明构思，本申请还提供了一种芯片封装结构，包括基底、设置在基底上的芯片，及设置在基底与芯片之间并与基底及芯片电连接的多个间隔设置的焊接凸点，所述基底和所述芯片之间形成间隙：
将上述第一方面所述的可调控的底部填充胶的胶液设置在所述基底的边缘，使所述底部填充胶的胶液通过毛细作用从所述间隙的一端流向所述间隙的另一端，以填充所述间隙；
对所述底部填充胶的胶液进行固化，固化温度为165℃，固化时间为2h；
固化结束后，得到芯片封装结构。
下面结合具体的实施例，进一步阐述本申请。应理解，这些实施例仅用于说明本申请而不用于限制本申请的范围。下列实施例中未注明具体条件的实验方法，通常按照国家标准测定。若没有相应的国家标准，则按照通用的国际标准、常规条件、或按照制造厂商所建议的条件进行。
实施例1-6和对比例1-3中底部填充胶各组分按照质量百分比计如下表1所示：
表1原料组分质量百分比
对实施例1-6和对比例1-3提供的底部填充胶进行储存模量、玻璃化转变温度、热膨胀系数、反应焓变、粘度增长率和流动性测试，具体测试过程如下：
1、储能模量：参考标准：ASTM E2254-2018，取165℃，2h固化完全的样品，制备测试样品的尺寸为55mm×10mm×2mm，采用DMA进行测量，测量模式：dual cantilever mode，振动频率：1Hz，振幅：10μm，升温速率：5℃/min；储能模量取25℃-245℃的值。
2、玻璃化转变温度Tg：参考标准：ASTM E2254-2018，取165℃，2h固化完全的样品，制备测试样品的尺寸为55mm×10mm×2mm，采用DMA进行测量，测量模式：dual cantilever mode，振动频率：1Hz，振幅：10μm，升温速率：5℃/min。
3、热膨胀系数：参考标准:ASTM E831-2019，取165℃，2h固化完全的样品，制备测试样品的尺寸为5mm×5mm×2mm。用TMA(compression mode)测 试样品的热膨胀系数。TMA的参数设置：预加载力：0.05N，第一次扫描：室温-220℃(升温速率10℃/min)；第二次扫描：室温-220℃(升温速率10℃/min)，取第二次升温段曲线数据；膨胀系数CTE1/2分别取温度为50℃-90℃和160℃-200℃的值。
4、反应焓变：DSC仪器进行测试,参考标准：GB/T 19466.3/ISO11357-3，取5-10mg样品(上述各组分按比例配置而成的胶液)，升温速率：10℃/min，室温-250℃。
5、粘度增长率：采用数显旋转粘度计进行测定(14#转子，转数为20r/min，室温进行测定)
6、流动性测试方法：将20mm×20mm，厚0.5mm的正方形玻璃片用50um厚的双面胶粘住四个角贴在载玻片上，将其放在90℃的电热板上，预热三分钟，采用细钢针将待测底部填充胶沿着正方形玻璃片的一条边横向涂抹，同时开始计时，在毛细力的作用下，底部填充胶会在玻璃片底部延流，记下流到边长一半(10mm)的时间，以及流满(20mm)时的时间。
测试结果如下表2-3所示：
表2测试结果
表3 DSC测试结果
由上述表格可知：
(1)对比例1中CY-186与三乙烯四胺的摩尔比大于1:1，环氧基过量，胺基的浓度较小，且反应热量较低，所以有多余CY-186未发生反应，最终Tg小于90℃；未添加硅烷偶联剂，常温24h粘度增长快，即采用对比例1配比制备的底部填充胶不稳定；将配置的底部填充胶的胶液沿着正方形玻璃片的一条边横向涂抹，在毛细力作用下，胶液在玻璃片底部延流，当延流至10mm时，用时126s，当延流至20mm时，用时580s，可见，此胶液的流动性较差；
(2)对比例2中CY-186与三乙烯四胺的摩尔比小于1:1，胺基过量，胺基的浓度较大，胺基-环氧基在固化的过程中发生缩合，且固化过程中释放的热量高，到达了环氧基均聚所需的温度，与此同时，一部分环氧基发生均聚反应，使得交联密度变小，链段变长，最终Tg小于90℃；未加硅烷偶联剂，常温24h粘度增长快，即采用对比例2配比制备的底部填充胶不稳定；通过流动性测试，此胶液的流动性较差；
(3)对比例3中CY-186与三乙烯四胺的摩尔比为1:0.95，Tg在90至180℃之间，但未加硅烷偶联剂，常温24h粘度增长快，即采用对比例3配比 制备的底部填充胶不稳定；通过流动性测试，此胶液的流动性较差；
(4)实施例1-3中CY-186与三乙烯四胺的摩尔比大于1:1，环氧基过量，胺基的浓度较小，且反应热量较低，所以有多余CY-186未发生反应，但CY-186与三乙烯四胺的摩尔比大于对比例1，所以Tg在90-180℃之间，且添加了硅烷偶联剂KH540，常温24h粘度增长率在100％以内，即采用实施例1-3配比制备的底部填充胶具有较好的稳定性；进行流动性测试时，可以发现延流时间大幅度缩短，即实施例1-3中的胶液的流动性较好。
(5)实施例4中CY-186与三乙烯四胺的摩尔比等于1:1，此时胺基-环氧反应完全，交联密度最大，Tg达到最大值180℃，且添加了硅烷偶联剂KH540，常温24h粘度增长率仅为22.4％，在实施例1-6中是最小的，即在CY-186与三乙烯四胺的摩尔比等于1:1时，Tg达到最大值180℃，采用实施例4配比制备的底部填充胶的稳定性最好；
(6)实施例5-6中CY-186与三乙烯四胺的摩尔比小于1:1，胺基过量，胺基的浓度较大，胺基-环氧基在固化的过程中发生缩合，且固化过程中释放的热量高，到达了环氧基均聚所需的温度，与此同时，一部分环氧基发生均聚反应，使得交联密度变小，链段变长，Tg变小，但实施例5-6中CY-186与三乙烯四胺的摩尔比小于对比例2，所以Tg大于对比例2；实施例5-6中CY-186与三乙烯四胺的摩尔比实施例4大，所以Tg小于实施例4，且在实施例5-6中添加了硅烷偶联剂KH540，常温24h粘度增长率在100％以内，即采用实施例5-6配比制备的底部填充胶具有较好的稳定性；
综上所述，采用本申请实施例1-6中配比制备的底部填充胶，由于添加了硅烷偶联剂，在将Tg控制在90-180℃之间的同时，常温24h粘度增长率也均在100％以内，具有较好的稳定性，进行流动性测试时，与对比例1-3相比，延流时间大幅度缩减，具有优异的流动性，即本申请提供了一种可调控、稳定性高及流动性优异的底部填充胶，有利于提高对芯片的保护效果。
最后，还需要说明的是，术语“包括”、“包含”或者其任何其他变体 意在涵盖非排他性的包含，从而使得包括一系列要素的过程、方法、物品或者设备不仅包括那些要素，而且还包括没有明确列出的其他要素，或者是还包括为这种过程、方法、物品或者设备所固有的要素。
尽管已描述了本发明的优选实施例，但本领域内的技术人员一旦得知了基本创造性概念，则可对这些实施例作出另外的变更和修改。所以，所附权利要求意欲解释为包括优选实施例以及落入本发明范围的所有变更和修改。
显然，本领域的技术人员可以对本发明进行各种改动和变型而不脱离本发明的精神和范围。这样，倘若本发明的这些修改和变型属于本发明权利要求及其等同技术的范围之内，则本发明也意图包含这些改动和变型在内。

Claims (7)

  1. 一种可调控的底部填充胶，其特征在于，所述底部填充胶按质量百分比计包括以下组分：三官能团环氧树脂21％-28％，胺类固化剂8％-19％，填充剂54％-66％，促进剂0.2％-0.4％，硅烷偶联剂0.1％-0.3％，炭黑0.1％-0.2％；所述三官能团环氧树脂和所述胺类固化剂的摩尔比为1:0.7-1:1.4；
    所述填充剂包括二氧化硅；所述二氧化硅的平均粒径为0.6μm-3μm；
    所述硅烷偶联剂包括γ-氨丙基三甲氧基硅烷和γ-氨丙基三乙氧基硅烷中的至少一种；
    所述三官能团环氧树脂的结构式为：
  2. 根据权利要求1所述的可调控的底部填充胶，其特征在于，所述胺类固化剂包括三乙烯四胺、二乙基甲苯二胺和间苯二胺中的至少一种。
  3. 根据权利要求2所述的可调控的底部填充胶，其特征在于，所述促进剂包括咪唑类促进剂。
  4. 根据权利要求3所述的可调控的底部填充胶，其特征在于，所述二氧化硅的质量百分比为60％-65％，所述咪唑类促进剂的质量百分比为0.2％，所述硅烷偶联剂的质量百分比为0.2％，所述炭黑的质量百分比为0.1％。
  5. 一种如权利要求1-4任意一项所述的可调控的底部填充胶的制备方法，其特征在于，所述制备方法包括：
    S1:将各组分按照各自的质量百分比进行搅拌混合，得到第一浆料，所述 各组分的质量百分比具体包括：三官能团环氧树脂21％-28％，胺类固化剂8％-19％，填充剂54％-66％，促进剂0.2％-0.4％，硅烷偶联剂0.1％-0.3％，炭黑0.1％-0.2％；
    S2：将所述第一浆料转移至三辊研磨机进行分散处理，得到分散均匀的第二浆料；
    S3：将所述第二浆料进行真空脱泡，得到底部填充胶。
  6. 根据权利要求5所述的制备方法，其特征在于，所述三官能团环氧树脂和所述胺类固化剂的摩尔比为1:0.7-1:1.4。
  7. 一种芯片封装结构，包括基底、设置在基底上的芯片，及设置在基底与芯片之间并与基底及芯片电连接的多个间隔设置的焊接凸点，所述基底和所述芯片之间形成间隙，其特征在于，
    将权利要求1-4任意一项所述的可调控的底部填充胶的胶液设置在所述基底的边缘，使所述底部填充胶的胶液通过毛细作用从所述间隙的一端流向所述间隙的另一端，以填充所述间隙；
    对所述底部填充胶的胶液进行固化，固化温度为165℃，固化时间为2h；
    固化结束后，得到芯片封装结构。
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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN120349754A (zh) * 2025-06-23 2025-07-22 武汉市三选科技有限公司 一种控制点胶胶宽的底部填充胶、其制备方法和倒装芯片
CN120399620A (zh) * 2025-07-03 2025-08-01 武汉市三选科技有限公司 一种强黏着力底部填充胶及其制备方法、芯片封装结构

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN117186820B (zh) * 2023-11-03 2024-02-09 武汉市三选科技有限公司 一种可调控的底部填充胶、其制备方法及芯片封装结构
CN117801745B (zh) * 2024-02-28 2024-05-31 武汉市三选科技有限公司 低热膨胀系数的底部填充胶、其制备方法及芯片封装结构
CN120574549B (zh) * 2025-07-29 2025-11-11 武汉市三选科技有限公司 一种点胶稳定的底部填充胶、其制备方法和芯片封装结构
CN120924206B (zh) * 2025-09-28 2026-04-07 韦尔通科技股份有限公司 一种环氧树脂组合物及其制备方法和应用

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1282105A (zh) * 2000-08-25 2001-01-31 中国科学院化学研究所 一种半导体封装用的液体环氧组合物及其用途
JP2004027025A (ja) * 2002-06-26 2004-01-29 Sumitomo Bakelite Co Ltd 液状封止樹脂組成物及び半導体装置
US20120172495A1 (en) * 2009-09-14 2012-07-05 Namics Corporation Underfill for high density interconnect flip chips
CN104962224A (zh) * 2015-07-06 2015-10-07 深圳先进技术研究院 底部填充胶及其制备方法
CN105462531A (zh) * 2015-12-07 2016-04-06 深圳先进技术研究院 底部填充胶及其制备方法和倒装芯片
CN117186820A (zh) * 2023-11-03 2023-12-08 武汉市三选科技有限公司 一种可调控的底部填充胶、其制备方法及芯片封装结构

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2680389B2 (ja) * 1988-12-28 1997-11-19 住友ベークライト株式会社 エポキシ樹脂組成物
JPH08269452A (ja) * 1995-03-30 1996-10-15 Tokai Rubber Ind Ltd 止水用薬液
CN101760160A (zh) * 2008-12-23 2010-06-30 中国科学院理化技术研究所 一种环氧树脂胶粘剂
CN101880515A (zh) * 2010-06-28 2010-11-10 深圳市库泰克电子材料技术有限公司 一种高可靠性、低粘度的底部填充胶
CN112724599A (zh) * 2020-12-28 2021-04-30 江苏科化新材料科技有限公司 一种倒装芯片封装的环氧树脂组合物
CN114196359A (zh) * 2021-11-29 2022-03-18 烟台德邦科技股份有限公司 一种低热膨胀系数的芯片级底部填充胶
CN115404025B (zh) * 2022-08-31 2024-01-26 深圳先进电子材料国际创新研究院 多羟基环状聚合物/聚硅氧烷改性环氧树脂及其制备方法和应用
CN116836664B (zh) * 2023-08-14 2026-04-07 韦尔通科技股份有限公司 一种高耐温底部填充环氧胶黏剂及其制备方法和应用

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1282105A (zh) * 2000-08-25 2001-01-31 中国科学院化学研究所 一种半导体封装用的液体环氧组合物及其用途
JP2004027025A (ja) * 2002-06-26 2004-01-29 Sumitomo Bakelite Co Ltd 液状封止樹脂組成物及び半導体装置
US20120172495A1 (en) * 2009-09-14 2012-07-05 Namics Corporation Underfill for high density interconnect flip chips
CN104962224A (zh) * 2015-07-06 2015-10-07 深圳先进技术研究院 底部填充胶及其制备方法
CN105462531A (zh) * 2015-12-07 2016-04-06 深圳先进技术研究院 底部填充胶及其制备方法和倒装芯片
CN117186820A (zh) * 2023-11-03 2023-12-08 武汉市三选科技有限公司 一种可调控的底部填充胶、其制备方法及芯片封装结构

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
See also references of EP4585662A4 *

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN120349754A (zh) * 2025-06-23 2025-07-22 武汉市三选科技有限公司 一种控制点胶胶宽的底部填充胶、其制备方法和倒装芯片
CN120399620A (zh) * 2025-07-03 2025-08-01 武汉市三选科技有限公司 一种强黏着力底部填充胶及其制备方法、芯片封装结构
CN120399620B (zh) * 2025-07-03 2025-09-30 武汉市三选科技有限公司 一种强黏着力底部填充胶及其制备方法、芯片封装结构

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